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Sample records for amorphous thin films

  1. Electrochromism of amorphous ruthenium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Se-Hee; Liu, Ping; Tracy, C. Edwin; Deb, Satyen K. [National Renewable Energy Laboratory, Center for Basic Sciences, 1617 Cole Boulevard, Golden, CO 80401 (United States); Cheong, Hyeonsik M. [Sogang University, Shinsoo-Dong, Seoul 121-742 (Korea, Republic of)

    2003-12-01

    We report on the electrochromic behavior of amorphous ruthenium oxide thin films and their electrochemical characteristics for use as counterelectrodes for electrochromic devices. Hydrous ruthenium oxide thin films were prepared by cyclic voltammetry on ITO coated glass substrates from an aqueous ruthenium chloride solution. The cyclic voltammograms of this material show the capacitive behavior including two redox reaction peaks in each cathodic and anodic scan. The ruthenium oxide thin film electrode exhibits a 50% modulation of optical transmittance at 670 nm wavelength with capacitor charge/discharge.

  2. Amorphous silicon for thin-film transistors

    OpenAIRE

    Schropp, Rudolf Emmanuel Isidore

    1987-01-01

    Hydrogenated amorphous silicon (a-Si:H) has considerable potential as a semiconducting material for large-area photoelectric and photovoltaic applications. Moreover, a-Si:H thin-film transistors (TFT’s) are very well suited as switching devices in addressable liquid crystal display panels and addressable image sensor arrays, due to a new technology of low-cost, Iow-temperature processing overlarge areas. ... Zie: Abstract

  3. Synthesis and Characterization of Amorphous Carbide-based Thin Films

    OpenAIRE

    Folkenant, Matilda

    2015-01-01

    In this thesis, research on synthesis, structure and characterization of amorphous carbide-based thin films is presented. Crystalline and nanocomposite carbide films can exhibit properties such as high electrical conductivity, high hardness and low friction and wear. These properties are in many cases structure-related, and thus, within this thesis a special focus is put on how the amorphous structure influences the material properties. Thin films within the Zr-Si-C and Cr-C-based systems hav...

  4. Electron field emission from amorphous semiconductor thin films

    International Nuclear Information System (INIS)

    The flat panel display market requires new and improved technologies in order to keep up with the requirements of modem lifestyles. Electron field emission from thin film amorphous semiconductors is potentially such a technology. For this technology to become viable, improvements in the field emitting properties of these materials must be achieved. To this end, it is important that a better understanding of the emission mechanisms responsible is attained. Amorphous carbon thin films, amorphous silicon thin films and other materials have been deposited, in-house and externally. These materials have been characterised using ellipsometry, profilometry, optical absorption, scanning electron microscopy, atomic force microscopy, electron paramagnetic resonance and Rutherford backscattering spectroscopy. An experimental system for evaluating the electron field emitting performance of thin films has been developed. In the process of developing thin film cathodes in this study, it has been possible to add a new and potentially more useful semiconductor, namely amorphous silicon, to the family of cold cathode emitters. Extensive experimental field emission data from amorphous carbon thin films, amorphous silicon thin films and other materials has been gathered. This data has been used to determine the mechanisms responsible for the observed electron emission. Preliminary computer simulations using appropriate values for the different material properties have exhibited emission mechanisms similar to those identified by experiment. (author)

  5. Raman and ellipsometric characterization of hydrogenated amorphous silicon thin films

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Hydrogenated amorphous silicon (a-Si:H) thin films were deposited by plasma-enhanced vapor deposition (PECVD) at different silane temperatures (Tg) before glow-discharge. The effect of Tg on the amorphous network and optoelectronic properties of the films has been investigated by Raman scattering spectra, ellipsometric transmittance spectra, and dark conductivity measurement, respectively. The results show that the increase in Tg leads to an improved ordering of amorphous network on the short and intermediate scales and an increase of both refractive index and absorption coefficient in a-Si:H thin films. It is indicated that the dark conductivity increases by two orders of magnitude when Tg is raised from room temperature (RT) to 433 K. The continuous ordering of amorphous network of a-Si:H thin films deposited at a higher Tg is the main cause for the increase of dark conductivity.

  6. Raman and ellipsometric characterization of hydrogenated amorphous silicon thin films

    Institute of Scientific and Technical Information of China (English)

    LIAO NaiMan; LI Wei; KUANG YueJun; JIANG YaDong; LI ShiBin; WU ZhiMing; QI KangCheng

    2009-01-01

    Hydrogenated amorphous silicon (a-Si:H) thin films were deposited by plasma-enhanced vapor depo-sition (PEOVD) at different silane temperatures (Tg) before glow-discharge. The effect of Tg on the amorphous network and optoelectronic properties of the films has been investigated by Raman scat-tering spectra, ellipsometric transmittance spectra, and dark conductivity measurement, respectively. The results show that the increase in Tg leads to an improved ordering of amorphous network on the short and intermediate scales and an increase of both refractive index and absorption coefficient in a-Si:H thin films. It is indicated that the dark conductivity increases by two orders of magnitude when Tg is raised from room temperature (RT) to 433 K. The continuous ordering of amorphous network of a-Si:H thin films deposited at a higher Tg is the main cause for the increase of dark conductivity.

  7. Molecular simulation of freestanding amorphous nickel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

    2013-10-31

    Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

  8. NMR study in amorphous CoZr thin film alloys

    International Nuclear Information System (INIS)

    59Co NMR study has been carried out in a series of magnetic thin film amorphous Co1-xZrx alloys in the concentration range 0.1< x<0.4. The analysis shows that every Zr nearest neighbour lowers the NMR frequency on Co in the amorphous CoZr alloys by about 30 MHz and that the alloy structure in Co-rich compositions resembles the polytetrahedrally closed packed crystalline phases. (orig.)

  9. Nanomechanical characterization of amorphous hydrogenated carbon thin films

    International Nuclear Information System (INIS)

    Amorphous hydrogenated carbon (a-C:H) thin films deposited on a silicon substrate under various mixtures of methane-hydrogen gas by electron cyclotron resonance microwave plasma chemical vapor deposition (ECR-MPCVD) was investigated. Microstructure, surface morphology and mechanical characterizations of the a-C:H films were analyzed using Raman spectroscopy, atomic force microscopy (AFM) and nanoindentation technique, respectively. The results indicated there was an increase of the hydrogen content, the ratio of the D-peak to the G-peak (I D/I G) increased but the surface roughness of the films was reduced. Both hardness and Young's modulus increased as the hydrogen content was increased. In addition, the contact stress-strain analysis is reported. The results confirmed that the mechanical properties of the amorphous hydrogenated carbon thin films improved using a higher H2 content in the source gas

  10. Elastic properties of amorphous thin films studied by Rayleigh waves

    International Nuclear Information System (INIS)

    Physical vapor deposition in ultra-high vacuum was used to co-deposit nickel and zirconium onto quartz single crystals and grow amorphous Ni1-xZrx (0.1 < x < 0.87) thin film. A high-resolution surface acoustic wave technique was developed for in situ measurement of film shear moduli. The modulus has narrow maxima at x = 0. 17, 0.22, 0.43, 0.5, 0.63, and 0.72, reflecting short-range ordering and formation of aggregates in amorphous phase. It is proposed that the aggregates correspond to polytetrahedral atom arrangements limited in size by geometrical frustration

  11. Crystallization kinetics of amorphous aluminum-tungsten thin films

    Energy Technology Data Exchange (ETDEWEB)

    Car, T.; Radic, N. [Rugjer Boskovic Inst., Zagreb (Croatia). Div. of Mater. Sci.; Ivkov, J. [Institute of Physics, Bijenicka 46, P.O.B. 304, HR-10000 Zagreb (Croatia); Babic, E.; Tonejc, A. [Faculty of Sciences, Physics Department, Bijenicka 32, P.O.B. 162, HR-10000 Zagreb (Croatia)

    1999-01-01

    Crystallization kinetics of the amorphous Al-W thin films under non-isothermal conditions was examined by continuous in situ electrical resistance measurements in vacuum. The estimated crystallization temperature of amorphous films in the composition series of the Al{sub 82}W{sub 18} to Al{sub 62}W{sub 38} compounds ranged from 800 K to 920 K. The activation energy for the crystallization and the Avrami exponent were determined. The results indicated that the crystallization mechanism in films with higher tungsten content was a diffusion-controlled process, whereas in films with the composition similar to the stoichiometric compound (Al{sub 4}W), the interface-controlled crystallization probably occurred. (orig.) With 4 figs., 1 tab., 26 refs.

  12. Magnetostriction measurements of amorphous ribbons and thin films

    Science.gov (United States)

    Ouyang, Chien

    The theme of the present work is to measure the saturation magnetostriction constants of amorphous ribbons and thin films. The saturation magnetostriction constants of amorphous ribbons, and thin films of Cosb{39}Nisb{31}Fesb8Sisb8Bsb{14}, CoZrY, and CoZrTb have been measured either by the Small Angle Magnetization Rotation (SAMR) method or by the initial susceptibility method. The SAMR method is used for the soft materials. It is found that the amorphous Cosb{39}Nisb{31}Fesb8Sisb8Bsb{14} prepared by ion beam deposition from an alloy target shows very soft magnetic properties and has a very small negative saturation magnetostriction, lambdasb{s}, of about {-}1×10sp{-7}. Sputtered films of CoZrTb show a strong perpendicular anisotropy when the Tb content is high. We have found that the SAMR method can be applied to CoZrTb films when the Tb content is low. The saturation magnetostriction constant of a sputtered film of Cosb{78.4}Zrsb{20.8}Tbsb{0.8} is 2×10sp{-6}. When the material is not magnetically soft or has a strong perpendicular anisotropy, the initial susceptibility method is used. The saturation magnetostriction constants of amorphous Cosb{77.2}Zrsb{20.4}Tbsb{2.4} and Cosb{72.2}Zrsb{14.6}Ysb{13.2} thin films are 6×10sp{-6}, and (2{˜}6)×10sp{-7}, respectively. The two methods, the SAMR and the initial susceptibility, utilize the same measurement setup making it a very convenient technique which is applicable for a range of materials.

  13. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  14. Amorphous thin film growth: theory compared with experiment

    OpenAIRE

    Raible, M.; Mayr, S. G.; Linz, S. J.; Moske, M.; Hänggi, P.; Samwer, K.

    1999-01-01

    Experimental results on amorphous ZrAlCu thin film growth and the dynamics of the surface morphology as predicted from a minimal nonlinear stochastic deposition equation are analysed and compared. Key points of this study are (i) an estimation procedure for coefficients entering into the growth equation and (ii) a detailed analysis and interpretation of the time evolution of the correlation length and the surface roughness. The results corroborate the usefulness of the deposition equation as ...

  15. Fracture properties of hydrogenated amorphous silicon carbide thin films

    International Nuclear Information System (INIS)

    The cohesive fracture properties of hydrogenated amorphous silicon carbide (a-SiC:H) thin films in moist environments are reported. Films with stoichiometric compositions (C/Si ≈ 1) exhibited a decreasing cohesive fracture energy with decreasing film density similar to other silica-based hybrid organic–inorganic films. However, lower density a-SiC:H films with non-stoichiometric compositions (C/Si ≈ 5) exhibited much higher cohesive fracture energy than the films with higher density stoichiometric compositions. One of the non-stoichiometric films exhibited fracture energy (∼9.5 J m−2) greater than that of dense silica glasses. The increased fracture energy was due to crack-tip plasticity, as demonstrated by significant pileup formation during nanoindentation and a fracture energy dependence on film thickness. The a-SiC:H films also exhibited a very low sensitivity to moisture-assisted cracking compared with other silica-based hybrid films. A new atomistic fracture model is presented to describe the observed moisture-assisted cracking in terms of the limited Si-O-Si suboxide bond formation that occurs in the films.

  16. Optical limiting in hydrogenated amorphous silicon-selenium thin films

    Energy Technology Data Exchange (ETDEWEB)

    Manaa, Hacene, E-mail: hmanaa@gmail.co [Physics Department, Kuwait University, P.O. Box 5969, Safat 13060 (Kuwait); Al-Mulla, Abdullah; Al-Jamal, Noor [Physics Department, Kuwait University, P.O. Box 5969, Safat 13060 (Kuwait); Al-Dallal, Shawqi; Al-Alawi, Saleh [Physics Department, University of Bahrain, P.O. Box 32038 (Bahrain)

    2010-05-03

    Hydrogenated amorphous silicon-selenium alloy thin films grown by capacitively coupled radio-frequency glow-discharge are investigated. Nonlinear absorptive effects are evaluated with the help of open aperture z-scan technique in the 525 to 580 nm spectral range. The nonlinear absorption coefficient is found to be very large and reaching the value of 5.14 x 10{sup -3} cm/W at 525 nm. The origin of the optical nonlinearities is studied and found to be due mainly to two photon absorption in the case of pulsed excitation, whereas thermal effects are thought to be dominant when the sample is excited with a continuous wave laser. Optical limiting potentialities of the thin film are experimentally observed and their thresholds are found to be very low.

  17. Toughening thin-film structures with ceramic-like amorphous silicon carbide films.

    Science.gov (United States)

    Matsuda, Yusuke; Ryu, Ill; King, Sean W; Bielefeld, Jeff; Dauskardt, Reinhold H

    2014-01-29

    A significant improvement of adhesion in thin-film structures is demonstrated using embedded ceramic-like amorphous silicon carbide films (a-SiC:H films). a-SiC:H films exhibit plasticity at the nanoscale and outstanding chemical and thermal stability unlike most materials. The multi-functionality and the ease of processing of the films have potential to offer a new toughening strategy for reliability of nanoscale device structures. PMID:23894055

  18. Amorphous IZO-based transparent thin film transistors

    International Nuclear Information System (INIS)

    Active electronics implemented on cheap flexible polymer substrates offer the promise of novel display technologies, wearable electronics, large area memory, and a multitude of other, as-yet-unthought-of applications that require low cost and high volume manufacturing. Thin film transistors (TFT's) fabricated on temperature-sensitive plastic substrates at low temperatures are the key to this technology. TFT's that use metal (In, Zn, Sn, Ga) oxide channels offer both high mobility (relative to amorphous Si) and the advantage of optical transparency in the visible regime. We report on the fabrication and performance of amorphous oxide transparent thin film transistors that use dc-magnetron sputter techniques to deposit IZO (In2O3 - 10 wt.% ZnO) at low oxygen potential (0 vol.% O2) for the source, drain, and gate-contact metallization and, at higher oxygen partial pressures (10 vol.% O2), for the semi-conducting channel. The devices in this study were processed at room temperature except for a single 280 oC PECVD deposition step to deposit a 230 nm-thick SiOx gate dielectric. The devices are optically transparent and operate in depletion mode with a threshold voltage of - 5 V, mobility of 15 cm2/V s, an on-off ratio of > 106 and, a sub-threshold slope of 1.2 V/decade. In addition, we report persistent photo-conductivity in the channel region of these devices when exposed to UV illumination

  19. Structural anisotropy in amorphous Fe-Tb thin films

    International Nuclear Information System (INIS)

    We have used conventional and anomalous dispersion x-ray scattering to study the near-neighbor atomic environments in sputter-deposited amorphous Fe-Tb thin films with a large perpendicular magnetic anisotropy. The as-deposited films show a clear structural anisotropy, with more Fe-Tb near neighbor pairs in the out-of-plane direction. Upon annealing, the magnetic anisotropy drops significantly, and we see a corresponding reduction in the structural anisotropy. The number of Fe-Tb near-neighbors increases in the in-plane direction, but does not change in the out-of-plane direction. Therefore, the distribution of Fe-Tb near neighbors becomes more uniform upon annealing. We conclude that the observed reduction in perpendicular magnetic anisotropy energy is a result of this change in structure. copyright 1996 The American Physical Society

  20. Amorphous semiconductor thin films characterization by nuclear microanalysis

    International Nuclear Information System (INIS)

    A review is presented summarizing the specific nuclear microanalysis methods applied in our laboratory to the study of amorphous semiconductor thin films. For backscattering, approximately 3 MeV Li ions are applicable when depth resolution and sensitivity are required while up to 8 MeV α-particles allow larger depths to be probed and elemental interferences to be solved. These features are predominant for into diffusion studies between metal electrodes and chalcogenide films. On the other hand hydrogen profiling using the 1H(15N,αγ) resonant nuclear reaction is described and analytical problems associated with its use are discussed. Application to the elaboration conditions of hydrogenated Si is developed

  1. Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon.

    Science.gov (United States)

    Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

    2012-01-01

    Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that thermal annealing of amorphous silicon deposited on Ni-metalized porous silicon leads to an enhancement in the crystalline quality and physical properties of the silicon thin films. The improvement in the quality of the film is due to the crystallization of the amorphous film during annealing. This simple and easy method can be used to produce silicon thin films with high quality suitable for thin film solar cell applications. PMID:22901341

  2. Understanding the Structure of Amorphous Thin Film Hafnia - Final Paper

    Energy Technology Data Exchange (ETDEWEB)

    Miranda, Andre [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2015-08-27

    Hafnium Oxide (HfO2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO2 thin films which hasn’t been done with the technique of this study. In this study, two HfO2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer. Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.

  3. Amorphous silicon thin films: The ultimate lightweight space solar cell

    Science.gov (United States)

    Vendura, G. J., Jr.; Kruer, M. A.; Schurig, H. H.; Bianchi, M. A.; Roth, J. A.

    1994-01-01

    Progress is reported with respect to the development of thin film amorphous (alpha-Si) terrestrial solar cells for space applications. Such devices promise to result in very lightweight, low cost, flexible arrays with superior end of life (EOL) performance. Each alpha-Si cell consists of a tandem arrangement of three very thin p-i-n junctions vapor deposited between film electrodes. The thickness of this entire stack is approximately 2.0 microns, resulting in a device of negligible weight, but one that must be mechanically supported for handling and fabrication into arrays. The stack is therefore presently deposited onto a large area (12 by 13 in), rigid, glass superstrate, 40 mil thick, and preliminary space qualification testing of modules so configured is underway. At the same time, a more advanced version is under development in which the thin film stack is transferred from the glass onto a thin (2.0 mil) polymer substrate to create large arrays that are truly flexible and significantly lighter than either the glassed alpha-Si version or present conventional crystalline technologies. In this paper the key processes for such effective transfer are described. In addition, both glassed (rigid) and unglassed (flexible) alpha-Si cells are studied when integrated with various advanced structures to form lightweight systems. EOL predictions are generated for the case of a 1000 W array in a standard, 10 year geosynchronous (GEO) orbit. Specific powers (W/kg), power densities (W/sq m) and total array costs ($/sq ft) are compared.

  4. Hydrogenated amorphous silicon thin film anode for proton conducting batteries

    Science.gov (United States)

    Meng, Tiejun; Young, Kwo; Beglau, David; Yan, Shuli; Zeng, Peng; Cheng, Mark Ming-Cheng

    2016-01-01

    Hydrogenated amorphous Si (a-Si:H) thin films deposited by chemical vapor deposition were used as anode in a non-conventional nickel metal hydride battery using a proton-conducting ionic liquid based non-aqueous electrolyte instead of alkaline solution for the first time, which showed a high specific discharge capacity of 1418 mAh g-1 for the 38th cycle and retained 707 mAh g-1 after 500 cycles. A maximum discharge capacity of 3635 mAh g-1 was obtained at a lower discharge rate, 510 mA g-1. This electrochemical discharge capacity is equivalent to about 3.8 hydrogen atoms stored in each silicon atom. Cyclic voltammogram showed an improved stability 300 mV below the hydrogen evolution potential. Both Raman spectroscopy and Fourier transform infrared spectroscopy studies showed no difference to the pre-existing covalent Si-H bond after electrochemical cycling and charging, indicating a non-covalent nature of the Si-H bonding contributing to the reversible hydrogen storage of the current material. Another a-Si:H thin film was prepared by an rf-sputtering deposition followed by an ex-situ hydrogenation, which showed a discharge capacity of 2377 mAh g-1.

  5. Amorphous Dielectric Thin Films with Extremely Low Mechanical Loss

    OpenAIRE

    Liu X; Queen D.R.; Metcalf T.H.; Karel J.E.; Hellman F.

    2015-01-01

    The ubiquitous low-energy excitations are one of the universal phenomena of amorphous solids. These excitations dominate the acoustic, dielectric, and thermal properties of structurally disordered solids. One exception has been a type of hydrogenated amorphous silicon (a-Si:H) with 1 at.% H. Using low temperature elastic and thermal measurements of electron-beam evap-orated amorphous silicon (a-Si), we show that TLS can be eliminated in this system as the films become denser and more structur...

  6. Electrochromic colour centres in amorphous tungsten trioxide thin films

    International Nuclear Information System (INIS)

    Amorphous tungsten trioxide films, investigated by the Raman scattering method, are shown to be composed of a spatial network of tightly bound (WO6)sub(n).mH2O clusters with a large number of terminal oxygen W(double bond)O and W-O-W bonds between clusters. The injected electrons in an amorphous tungsten trioxide film are localized in the tungsten 5d orbitals in an axially distorted octahedron, as is shown by ESR analysis. The optical absorption of a coloured amorphous tungsten trioxide film, as has previously been proposed, can be satisfactorily described by an intervalence charge-transfer transition between localized W5+ and W6+ states. (Auth.)

  7. Silicon nanocrystals on amorphous silicon carbide alloy thin films: Control of film properties and nanocrystals growth

    International Nuclear Information System (INIS)

    The present study demonstrates the growth of silicon nanocrystals on amorphous silicon carbide alloy thin films. Amorphous silicon carbide films [a-Si1−xCx:H (with x 1−xCx:H layer. The effect of short-time annealing at 700 °C on the composition and properties of the layer was studied by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. It was observed that the silicon-to-carbon ratio in the layer remains unchanged after short-time annealing, but the reorganization of the film due to a large dehydrogenation leads to a higher density of SiC bonds. Moreover, the film remains amorphous after the performed short-time annealing. In a second part, it was shown that a high density (1 × 1012 cm−2) of silicon nanocrystals can be grown by low pressure chemical vapor deposition on a-Si0.8C0.2 surfaces at 700 °C, from silane diluted in hydrogen. The influence of growth time and silane partial pressure on nanocrystals size and density was studied. It was also found that amorphous silicon carbide surfaces enhance silicon nanocrystal nucleation with respect to SiO2, due to the differences in surface chemical properties. - Highlights: ► Silicon nanocrystals (Si-NC) growth on amorphous silicon carbide alloy thin films ► Plasma deposited amorphous silicon carbide films with well-controlled properties ► Study on the thermal effect of 700 °C short-time annealing on the layer properties ► Low pressure chemical vapor deposition (LPCVD) of Si-NC ► High density (1 × 1012 cm−2) of Si-NC was achieved on a-Si0.8C0.2 surfaces by LPCVD.

  8. Optical position detectors based on thin film amorphous silicon

    Science.gov (United States)

    Henry, Jasmine; Livingstone, John

    2001-10-01

    Thin film optical position sensitive detectors (PSDs) based on novel hydrogenated amorphous silicon Schottky barrier (SB) structures are compared in this work. The three structures reported here have been tested under different light sources to measure their linear properties and wavelength response characteristics. The sputtered a-Si sensors were configured as layered structures of platinum, a-Si and indium tin oxide, forming SB-i-n devices and exhibited linear properties similar to multi-layer a-Si p-i- n devices produced by complex chemical vapor deposition procedures, which involve flammable and toxic gases. All structures were test4ed as possible configurations for 2D sensors. The devices were tested under white light, filtered white light and also a red diode laser. Each of the three structures responded quite differently to each of the sources. Results, based on the correlation coefficient, which measures the linearity of output and which has a maximum value of 1, produced r values ranging between 0.992 to 0.999, in the best performances.

  9. Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

    OpenAIRE

    Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

    2012-01-01

    Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that...

  10. Polycrystalline VO2 thin films via femtosecond laser processing of amorphous VO x

    Science.gov (United States)

    Charipar, N. A.; Kim, H.; Breckenfeld, E.; Charipar, K. M.; Mathews, S. A.; Piqué, A.

    2016-05-01

    Femtosecond laser processing of pulsed laser-deposited amorphous vanadium oxide thin films was investigated. Polycrystalline VO2 thin films were achieved by femtosecond laser processing in air at room temperature. The electrical transport properties, crystal structure, surface morphology, and optical properties were characterized. The laser-processed films exhibited a metal-insulator phase transition characteristic of VO2, thus presenting a pathway for the growth of crystalline vanadium dioxide films on low-temperature substrates.

  11. Amorphous and crystalline IrO2 thin films as potential stimulation electrode coatings

    International Nuclear Information System (INIS)

    Amorphous and crystalline iridium oxide thin films with potential use as coating materials for stimulation electrodes were studied. Characterization of these films by cyclic voltammetry and impedance spectroscopy has revealed a considerable decrease in impedance and an increase in charge capacity of iridium oxide thin films after an electrochemical activation process in 0.9% NaCl solution. The surface morphology of these films was studied by scanning electron microscopy. The two types of IrO2 films were also compared under conditions relevant to applications as stimulation electrodes. The results indicate that amorphous IrO2 films have significantly higher charge storage capacity and lower impedance than crystalline IrO2 films. This makes the amorphous films a preferable coating material for stimulation applications

  12. Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films

    OpenAIRE

    Voz Sánchez, Cristóbal; Martin, I.; Orpella, A.; Puigdollers i González, Joaquim; Vetter, M.; Alcubilla González, Ramón; Soler Vilamitjana, David; Fonrodona Turon, Marta; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi

    2003-01-01

    In this work, we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination velocity was the quasi-steady-state photoconductance technique. Hydrogenated amorphous and nanocrystalline silicon films were evaluated as passivating layers on n- and p-type float zone silicon wafers. The best results were obtained with amorphous silicon films, which allowed ...

  13. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Junghwan, E-mail: JH.KIM@lucid.msl.titech.ac.jp; Miyokawa, Norihiko; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Toda, Yoshitake [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan)

    2016-01-15

    We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

  14. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

    Science.gov (United States)

    Kim, Junghwan; Miyokawa, Norihiko; Ide, Keisuke; Toda, Yoshitake; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

    2016-01-01

    We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

  15. Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

    International Nuclear Information System (INIS)

    Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth

  16. Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiaopu, E-mail: xl6ba@virginia.edu; Ma, Chung T.; Poon, S. Joseph, E-mail: sjp9x@virginia.edu [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Devaraj, Arun [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Spurgeon, Steven R.; Comes, Ryan B. [Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

    2016-01-04

    Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

  17. Amorphous Dielectric Thin Films with Extremely Low Mechanical Loss

    Directory of Open Access Journals (Sweden)

    Liu X.

    2015-04-01

    Full Text Available The ubiquitous low-energy excitations are one of the universal phenomena of amorphous solids. These excitations dominate the acoustic, dielectric, and thermal properties of structurally disordered solids. One exception has been a type of hydrogenated amorphous silicon (a-Si:H with 1 at.% H. Using low temperature elastic and thermal measurements of electron-beam evap-orated amorphous silicon (a-Si, we show that TLS can be eliminated in this system as the films become denser and more structurally ordered under certain deposition conditions. Our results demonstrate that TLS are not intrinsic to the glassy state but instead reside in low density regions of the amorphous network. This work obviates the role hydrogen was previously thought to play in removing TLS in a-Si:H and favors an ideal four-fold covalently bonded amorphous structure as the cause for the disappearance of TLS. Our result supports the notion that a-Si can be made a “perfect glass” with “crystal-like” properties, thus offering an encouraging opportunity to use it as a simple crystal dielectric alternative in applications, such as in modern quantum devices where TLS are the source of dissipation, decoherence and 1/f noise.

  18. Optical waveguiding in amorphous tellurium oxide thin films

    International Nuclear Information System (INIS)

    Optical waveguiding characteristics of amorphous TeO2-x films deposited by reactive sputtering under different O2:Ar gas mixtures are investigated on fused quartz and Corning glass substrates. Infra-red absorption band in the range 641-658 cm-1 confirmed the formation of a Te-O bond, and a 20:80 O2:Ar gas mixture ratio is found to be optimum for achieving highly uniform and transparent films at a high deposition rate. As grown amorphous films exhibited a large band gap (3.76 eV); a high refractive index value (2.042-2.052) with low dispersion over a wide wavelength range of 500-2000 nm. Optical waveguiding with low propagation loss of 0.26 dB/cm at 633 nm is observed on films subjected to a post-deposition annealing treatment at 200 deg. C. Packing density and etch rates have been determined and correlated with the lowering of optical propagation loss in the annealed films

  19. Property change during nanosecond pulse laser annealing of amorphous NiTi thin film

    Indian Academy of Sciences (India)

    S K Sadrnezhaad; Noushin Yasavol; Mansoureh Ganjali; Sohrab Sanjabi

    2012-06-01

    Nanosecond lasers of different intensities were pulsed into sputter-deposited amorphous thin films of near equiatomic Ni/Ti composition to produce partially crystallized highly sensitive -phase spots surrounded by amorphous regions. Scanning electron microscopy having secondary and back-scattered electrons, field emission scanning electron microscopy, optical microscopy and X-ray diffraction patterns were used to characterize the laser treated spots. Effect of nanosecond pulse lasering on microstructure, morphology, thermal diffusion and inclusion formation was investigated. Increasing beam intensity and laser pulse-number promoted amorphous to -phase transition. Lowering duration of the pulse incidence reduced local film oxidation and film/substrate interference.

  20. Silicon nanocrystals on amorphous silicon carbide alloy thin films: Control of film properties and nanocrystals growth

    Energy Technology Data Exchange (ETDEWEB)

    Barbe, Jeremy, E-mail: jeremy.barbe@hotmail.com [CEA, Liten, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Universite de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, 31062 Toulouse (France); Xie, Ling; Leifer, Klaus [Department of Engineering Sciences, Uppsala University, Box 534, S-751 21 Uppsala (Sweden); Faucherand, Pascal; Morin, Christine; Rapisarda, Dario; De Vito, Eric [CEA, Liten, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Makasheva, Kremena; Despax, Bernard [Universite de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, 31062 Toulouse (France); CNRS, LAPLACE, F-31062 Toulouse (France); Perraud, Simon [CEA, Liten, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2012-11-01

    The present study demonstrates the growth of silicon nanocrystals on amorphous silicon carbide alloy thin films. Amorphous silicon carbide films [a-Si{sub 1-x}C{sub x}:H (with x < 0.3)] were obtained by plasma enhanced chemical vapor deposition from a mixture of silane and methane diluted in hydrogen. The effect of varying the precursor gas-flow ratio on the film properties was investigated. In particular, a wide optical band gap (2.3 eV) was reached by using a high methane-to-silane flow ratio during the deposition of the a-Si{sub 1-x}C{sub x}:H layer. The effect of short-time annealing at 700 Degree-Sign C on the composition and properties of the layer was studied by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. It was observed that the silicon-to-carbon ratio in the layer remains unchanged after short-time annealing, but the reorganization of the film due to a large dehydrogenation leads to a higher density of SiC bonds. Moreover, the film remains amorphous after the performed short-time annealing. In a second part, it was shown that a high density (1 Multiplication-Sign 10{sup 12} cm{sup -2}) of silicon nanocrystals can be grown by low pressure chemical vapor deposition on a-Si{sub 0.8}C{sub 0.2} surfaces at 700 Degree-Sign C, from silane diluted in hydrogen. The influence of growth time and silane partial pressure on nanocrystals size and density was studied. It was also found that amorphous silicon carbide surfaces enhance silicon nanocrystal nucleation with respect to SiO{sub 2}, due to the differences in surface chemical properties. - Highlights: Black-Right-Pointing-Pointer Silicon nanocrystals (Si-NC) growth on amorphous silicon carbide alloy thin films Black-Right-Pointing-Pointer Plasma deposited amorphous silicon carbide films with well-controlled properties Black-Right-Pointing-Pointer Study on the thermal effect of 700 Degree-Sign C short-time annealing on the layer properties Black-Right-Pointing-Pointer Low pressure

  1. Heat-Induced Agglomeration of Amorphous Silicon Nanoparticles Toward the Formation of Silicon Thin Film.

    Science.gov (United States)

    Jang, Bo Yun; Kim, Ja Young; Seo, Gyeongju; Shin, Chae-Ho; Ko, Chang Hyun

    2016-01-01

    The thermal behavior of silicon nanoparticles (Si NPs) was investigated for the preparation of silicon thin film using a solution process. TEM analysis of Si NPs, synthesized by inductively coupled plasma, revealed that the micro-structure of the Si NPs was amorphous and that the Si NPs had melted and merged at a comparatively low temperature (~750 °C) considering bulk melting temperature of silicon (1414 °C). A silicon ink solution was prepared by dispersing amorphous Si NPs in propylene glycol (PG). It was then coated onto a silicon wafer and a quartz plate to form a thin film. These films were annealed in a vacuum or in an N₂ environment to increase their film density. N2 annealing at 800 °C and 1000 °C induced the crystallization of the amorphous thin film. An elemental analysis by the SIMS depth profile showed that N₂annealing at 1000 °C for 180 min drastically reduced the concentrations of carbon and oxygen inside the silicon thin film. These results indicate that silicon ink prepared using amorphous Si NPs in PG can serve as a proper means of preparing silicon thin film via solution process. PMID:27398566

  2. Effect of crystalline/amorphous interfaces on thermal transport across confined thin films and superlattices

    Science.gov (United States)

    Giri, Ashutosh; Braun, Jeffrey L.; Hopkins, Patrick E.

    2016-06-01

    We report on the thermal boundary resistances across crystalline and amorphous confined thin films and the thermal conductivities of amorphous/crystalline superlattices for Si/Ge systems as determined via non-equilibrium molecular dynamics simulations. Thermal resistances across disordered Si or Ge thin films increase with increasing length of the interfacial thin films and in general demonstrate higher thermal boundary resistances in comparison to ordered films. However, for films ≲3 nm, the resistances are highly dependent on the spectral overlap of the density of states between the film and leads. Furthermore, the resistances at a single amorphous/crystalline interface in these structures are much lower than those at interfaces between the corresponding crystalline materials, suggesting that diffusive scattering at an interface could result in higher energy transmissions in these systems. We use these findings, together with the fact that high mass ratios between amorphous and crystalline materials can lead to higher thermal resistances across thin films, to design amorphous/crystalline superlattices with very low thermal conductivities. In this regard, we study the thermal conductivities of amorphous/crystalline superlattices and show that the thermal conductivities decrease monotonically with increasing interface densities above 0.1 nm-1. These thermal conductivities are lower than that of the homogeneous amorphous counterparts, which alludes to the fact that interfaces non-negligibly contribute to thermal resistance in these superlattices. Our results suggest that the thermal conductivity of superlattices can be reduced below the amorphous limit of its material constituent even when one of the materials remains crystalline.

  3. Characteristics of Cu-doped amorphous NiO thin films formed by RF magnetron sputtering

    Science.gov (United States)

    Sato, Kazuya; Kim, Sangcheol; Komuro, Shuji; Zhao, Xinwei

    2016-06-01

    Transparent conducting Cu-doped NiO thin films were deposited on quartz glass substrates by radio frequency magnetron spattering. The fabricated thin films were all in amorphous phase. A relatively high transmittance of 73% was achieved. The density ratio of Ni3+/(Ni2+ + Ni3+) ions in the films decreased with increasing O2 gas pressure in the fabrication chamber, which caused a decrease in the carrier concentration of the films. The increasing pressure also led to the increase in Hall mobility. By controlling the chamber pressure and substrate temperature, p-type transparent conducting NiO films with reasonable electrical properties were obtained.

  4. Platinum containing amorphous hydrogenated carbon (a-C:H/Pt) thin films as selective solar absorbers

    International Nuclear Information System (INIS)

    We have investigated a double-cermet structured thin film in which an a-C:H thin film was used as an anti-reflective (AR) layer and two platinum-containing amorphous hydrogenated carbon (a-C:H/Pt) thin films were used as the double cermet layers. A reactive co-sputter deposition method was used to prepare both the anti-reflective and cermet layers. Effects of the target power and heat treatment were studied. The obtained films were characterized using X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy. The optical absorptance and emittance of the as deposited and annealed films were determined using UV–vis-NIR spectroscopy. We show that the optical absorptance of the resulting double-cermet structured thin film is as high as 96% and remains to be 91% after heat treatment at 400 °C, indicating the thermal stability of the film

  5. Platinum containing amorphous hydrogenated carbon (a-C:H/Pt) thin films as selective solar absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Lan, Yung-Hsiang; Brahma, Sanjaya [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Tzeng, Y.H. [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Ting, Jyh-Ming, E-mail: jting@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan (China)

    2014-10-15

    We have investigated a double-cermet structured thin film in which an a-C:H thin film was used as an anti-reflective (AR) layer and two platinum-containing amorphous hydrogenated carbon (a-C:H/Pt) thin films were used as the double cermet layers. A reactive co-sputter deposition method was used to prepare both the anti-reflective and cermet layers. Effects of the target power and heat treatment were studied. The obtained films were characterized using X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy. The optical absorptance and emittance of the as deposited and annealed films were determined using UV–vis-NIR spectroscopy. We show that the optical absorptance of the resulting double-cermet structured thin film is as high as 96% and remains to be 91% after heat treatment at 400 °C, indicating the thermal stability of the film.

  6. Nano-structural Modification of Amorphous Carbon Thin Films by Low-energy Electron Beam Irradiation

    Institute of Scientific and Technical Information of China (English)

    EijiIwamura; MasanoriYamaguchi

    2004-01-01

    A new approach using a low-energy electron beam radiation system was investigated to synthesize carbon hybrid structures in amorphous carbon thin films. Two types of amorphous carbon films, which were 15at% iron containing film and with column/inter-column structures, were deposited onto Si substrates by a sputtering technique and subsequently exposed to an electron shower of which the energy and dose rate were much smaller compared to an intense electron beam used in a transmission electron microscopy. As a result of the low-energy and low-dose electron irradiation process, graphitic structures formed in amorphous matrix at a relatively low temperature up to 450 K. Hybrid carbon thin films containing onion-like structures in an amorphous carbon matrix were synthesized by dynamic structural modification of iron containing amorphous carbon thin films. It was found that the graphitization progressed more in the electron irradiation than in annealing at 773K, and it was attributed to thermal and catalytic effects which are strongly related to grain growth of metal clusters. On the other hand, a reversal of TEM image contrast was observed in a-C films with column/inter-column structures. It is presumed that preferable graphitization occurred in the inter-column regions induced by electron irradiation.

  7. Nano-structural Modification of Amorphous Carbon Thin Films by Low-energy Electron Beam Irradiation

    Institute of Scientific and Technical Information of China (English)

    Eiji Iwamura; Masanori Yamaguchi

    2004-01-01

    A new approach using a low-energy electron beam radiation system was investigated to synthesize carbon hybrid structures in amorphous carbon thin films. Two types of amorphous carbon films, which were 15at% iron containing film and with column/inter-column structures, were deposited onto Si substrates by a sputtering technique and subsequently exposed to an electron shower of which the energy and dose rate were much smaller compared to an intense electron beam used in a transmission electron microscopy. As a result of the low-energy and low-dose electron irradiation process,graphitic structures formed in amorphous matrix at a relatively low temperature up to 450 K. Hybrid carbon thin films containing onion-like structures in an amorphous carbon matrix were synthesized by dynamic structural modification of iron containing amorphous carbon thin films. It was found that the graphitization progressed more in the electron irradiation than in annealing at 773K, and it was attributed to thermal and catalytic effects which are strongly related to grain growth of metal clusters. On the other hand, a reversal of TEM image contrast was observed in a-C films with column/inter-column structures. It is presumed that preferable graphitization occurred in the inter-column regions induced by electron irradiation.

  8. Nanovoid formation by change in amorphous structure through the annealing of amorphous Al2O3 thin films

    International Nuclear Information System (INIS)

    The formation mechanism of a high density of nanovoids by annealing amorphous Al2O3 thin films prepared by an electron beam deposition method was investigated. Transmission electron microscopy observations revealed that nanovoids ∼1-2 nm in size were formed by annealing amorphous Al2O3 thin films at 973 K for 1-12 h, where the amorphous state was retained. The elastic stiffness, measured by a picosecond laser ultrasound method, and the density, measured by X-ray reflectivity, increased drastically after the annealing process, despite nanovoid formation. These increases indicate a change in the amorphous structure during the annealing process. Molecular dynamics simulations indicated that an increase in stable AlO6 basic units and the change in the ring distribution lead to a drastic increase in both the elastic stiffness and the density. It is probable that a pre-annealed Al2O3 amorphous film consists of unstable low-density regions containing a low fraction of stable AlO6 units and stable high-density regions containing a high fraction of stable AlO6 units. Thus, local density growth in the unstable low-density regions during annealing leads to nanovoid formation (i.e., local volume shrinkage).

  9. Deviations of the glass transition temperature in amorphous conjugated polymer thin films

    Science.gov (United States)

    Liu, Dan; Osuna Orozco, Rodrigo; Wang, Tao

    2013-08-01

    The deviations of the glass transition temperature (Tg) in thin films of an amorphous conjugated polymer poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) (TFB) are reported. Monotonic and nonmonotonic Tg deviations are observed in TFB thin films supported on Si-SiOx and poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS), respectively. A three-layer model is developed to fit both monotonic and nonmonotonic Tg deviations in these films. A 5-nm PEDOT:PSS capping layer was not found to be effective to remove the free-surface effect in Si-SiOx supported TFB films.

  10. Infrared Insight into the Network of Hydrogenated Amorphous and Polycrystalline Silicon thin Films

    OpenAIRE

    Jarmila Mullerova

    2006-01-01

    IR measurements were carried out on both amorphous and polycrystalline silicon samples deposited by PECVD on glass substrate. The transition from amorphous to polycrystalline phase was achieved by increasing dilution of silane plasma at the deposition process. The samples were found to be mixed phase materials. Commonly, infrared spectra of hydrogenated silicon thin films yield information about microstructure, hydrogen content and hydrogen bonding to silicon. In this paper, addit...

  11. Structural, optical and mechanical properties of amorphous and crystalline alumina thin films

    International Nuclear Information System (INIS)

    Thin films of amorphous alumina of thickness 350 nm were deposited on fused silica substrates by electron beam evaporation. Amorphous films were annealed at several temperatures in the range: 400–1130 °C and changes in film crystallinity, short-range structure, optical and mechanical properties were studied. X-ray diffraction studies found that crystallization starts at 800 °C and produces γ and δ-alumina, the latter phase grows with heat treatment and the sample was mostly δ and θ-alumina after annealing at 1130 °C. The as-deposited amorphous alumina films have low hardness of 5 to 8 GPa, which increases to 11 to 12 GPa in crystalline sample. 27Al Magic Angle Spinning Nuclear Magnetic Resonance was used to study the short-range order of amorphous and crystalline alumina films and it was found that amorphous alumina film contains AlO5 and AlO4 structural units in the ratio of 1:2. The concentration of AlO5 was significantly suppressed in crystalline film, which contains 48% of Al3+ ions in AlO6, 7% in AlO5 and 45% in AlO4 units. - Highlights: • Structure–property correlations in alumina films grown by electron-beam evaporation • Amorphous films crystallize into γ and δ-alumina on annealing in air at 800 °C. • δ and θ-alumina films are stable up to 1130 °C and do not transform to α-phase. • Amorphous alumina films contain [5]Al and [4]Al structural units in the ratio of 1:2. • [5]Al decreases whereas [6]Al concentration increases on crystallization

  12. Effect of ion irradiation on the stability of amorphous Ge2Sb2Te5 thin films

    International Nuclear Information System (INIS)

    The archival life of phase-change memories (PCM) is determined by the thermal stability of amorphous phase in a crystalline matrix. In this paper, we report the effect of ion beam irradiation on the crystallization kinetics of amorphous Ge2Sb2Te5 alloy (GST). The transition rate of amorphous GST films was measured by in situ time resolved reflectivity (TRR). The amorphous to crystal transformation time decreases considerably in irradiated amorphous GST samples when ion fluence increases. The stability of amorphous Ge2Sb2Te5 thin films subjected to ion irradiation is discussed in terms of the free energy variation of the amorphous state because of damage accumulation

  13. Magnetic and microwave properties of amorphous FeCoNbBCu thin films

    Science.gov (United States)

    Bi, Mei; Wang, Xin; Lu, Haipeng; Deng, Longjiang; Sunday, Katie Jo; Taheri, Mitra L.; Harris, Vincent G.

    2016-01-01

    The soft magnetic and microwave properties of amorphous FeCoNbBCu thin films with thicknesses varying from 70 nm to 450 nm have been systematically investigated. Due to the amorphous structure, the coercivity is 1.5 Oe in thicker films. The thickness-dependent microwave characteristics of the films were measured over the range 0.5-6 GHz and analyzed using the Landau-Lifshitz-Gilbert equation. Without applying magnetic field during deposition and measurement, an in-plane uniaxial anisotropy in amorphous thin films was obtained, ranging from 21 to 45 Oe. The interface interaction between substrate and film is confirmed to be the origin of the induced anisotropy, whereas the volume anisotropy contribution is more pronounced with increasing film thickness. For films possessing an in-plane uniaxial anisotropy, the shift of resonance frequency with thickness is observed and verified by the Kittel equation. The demonstration of a controllable and tunable anisotropy suggests that the FeCoNbBCu thin films have potential application as magnetic materials for Spintronics-based microwave devices.

  14. Conduction mechanism in amorphous InGaZnO thin film transistors

    NARCIS (Netherlands)

    Bhoolokam, A.; Nag, M.; Steudel, S.; Genoe, J.; Gelinck, G.; Kadashchuk, A.; Groeseneken, G.; Heremans, P.

    2016-01-01

    We validate a model which is a combination of multiple trapping and release and percolation model for describing the conduction mechanism in amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT). We show that using just multiple trapping and release or percolation model is insuffi

  15. Analysis of frequency dispersion in amorphous In–Ga–Zn–O thin-film transistors

    NARCIS (Netherlands)

    Bhoolokam, A.; Nag, M.; Chasin, A.; Steudel, S.; Genoe, J.; Gelinck, G.; Groeseneken, G.; Heremans, P.

    2015-01-01

    It is shown in this paper that the finite resistance of the accumulation channel in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs) is the main cause of the frequency dispersion of the capacitance–voltage curves in these devices. A transmission line model, accounting for the distributed nat

  16. Photoluminescence properties of BaMoO4 amorphous thin films

    International Nuclear Information System (INIS)

    BaMoO4 amorphous and crystalline thin films were prepared from polymeric precursors. The BaMoO4 was deposited onto Si wafers by means of the spinning technique. The structure and optical properties of the resulting films were characterized by FTIR reflectance spectra, X-ray diffraction (XRD), atomic force microscopy (AFM) and optical reflectance. The bond Mo-O present in BaMoO4 was confirmed by FTIR reflectance spectra. XRD characterization showed that thin films heat-treated at 600 and 200 deg. C presented the scheelite-type crystalline phase and amorphous, respectively. AFM analyses showed a considerable variation in surface morphology by comparing samples heat-treated at 200 and 600 deg. C. The reflectivity spectra showed two bands, positioned at 3.38 and 4.37 eV that were attributed to the excitonic state of Ba2+ and electronic transitions within MoO2-4, respectively. The optical band gaps of BaMoO4 were 3.38 and 2.19 eV, for crystalline (600 deg. C/2 h) and amorphous (200 deg. C/8 h) films, respectively. The room-temperature luminescence spectra revealed an intense single-emission band in the visible region. The PL intensity of these materials was increased upon heat-treatment. The excellent optical properties observed for BaMoO4 amorphous thin films suggested that this material is a highly promising candidate for photoluminescent applications

  17. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor

    Directory of Open Access Journals (Sweden)

    Junghwan Kim

    2016-01-01

    Full Text Available We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors.

  18. Synthesis and characterization of thin films of nitrided amorphous carbon deposited by laser ablation

    International Nuclear Information System (INIS)

    The objective of this work is the synthesis and characterization of thin films of amorphous carbon (a-C) and thin films of nitrided amorphous carbon (a-C-N) using the laser ablation technique for their deposit. For this purpose, the physical properties of the obtained films were studied as function of diverse parameters of deposit such as: nitrogen pressure, power density, substrate temperature and substrate-target distance. For the characterization of the properties of the deposited thin films the following techniques were used: a) Raman spectroscopy which has demonstrated being a sensitive technique to the sp2 and sp3 bonds content, b) Energy Dispersive Spectroscopy which allows to know semi-quantitatively way the presence of the elements which make up the deposited films, c) Spectrophotometry, for obtaining the absorption spectra and subsequently the optical energy gap of the deposited material, d) Ellipsometry for determining the refraction index, e) Scanning Electron Microscopy for studying the surface morphology of thin films and, f) Profilemetry, which allows the determination the thickness of the deposited thin films. (Author)

  19. Thickness distribution of thin amorphous chalcogenide films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Pavlista, Martin; Hrdlicka, Martin; Prikryl, Jan [University of Pardubice, Research Centre Advanced Inorganic Materials, Faculty of Chemical Technology, Pardubice (Czech Republic); Nemec, Petr; Frumar, Miloslav [University of Pardubice, Research Centre Advanced Inorganic Materials, Faculty of Chemical Technology, Pardubice (Czech Republic); University of Pardubice, Department of General and Inorganic Chemistry, Faculty of Chemical Technology, Pardubice (Czech Republic)

    2008-11-15

    Amorphous chalcogenide thin films were prepared from As{sub 2}Se{sub 3}, As{sub 3}Se{sub 2} and InSe bulk glasses by pulsed laser deposition using a KrF excimer laser. Thickness profiles of the films were determined using variable angle spectroscopic ellipsometry. The influence of the laser beam scanning process during the deposition on the thickness distribution of the prepared thin films was evaluated and the corresponding equations suggested. The results were compared with experimental data. (orig.)

  20. Atomic Layer Deposited Zinc Tin Oxide Channel for Amorphous Oxide Thin Film Transistors

    OpenAIRE

    Heo, Jaeyeong; Kim, Sang Bok; Gordon, Roy Gerald

    2012-01-01

    Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition (ALD). The films maintained their amorphous character up to temperatures over 500 \\(^{\\circ}\\)C. The highest field effect mobility was ~13 \\(cm^2/V^.s\\) with on-to-off ratios of drain current ~10\\(^9\\)-10\\(^{10}\\). The lowest subthreshold swing of 0.27 V/decade was observed with thermal oxide as a gate insulator. The channel layers grown at 170 \\(^{\\circ}\\)C showed better transistor ...

  1. Electrical and optical properties of thin film of amorphous silicon nanoparticles

    International Nuclear Information System (INIS)

    Electrical and optical properties of thin film of amorphous silicon nanoparticles (a-Si) are studied. Thin film of silicon is synthesized on glass substrate under an ambient gas (Ar) atmosphere using physical vapour condensation system. We have employed Field Emission Scanning Electron Microscopy (FESEM), Transmission Electron Microscopy (TEM) and Atomic Force Microscopy (AFM) to study the morphology and microstructure of this film. It is observed that this silicon film contains almost spherical nanoparticles with size varying between 10 and 40 nm. The average surface roughness is about 140 nm as evident from the AFM image. X-ray diffraction analysis is also performed. The XRD spectrum does not show any significant peak which indicates the amorphous nature of the film. To understand the electrical transport phenomena, the temperature dependence of dc conductivity for this film is studied over a temperature range of (300-100 K). On the basis of temperature dependence of dc conductivity, it is suggested that the conduction takes place via variable range hopping (VRH). Three-dimensional Mott's variable range hopping (3D VRH) is applied to explain the conduction mechanism for the transport of charge carriers in this system. Various Mott's parameters such as density of states, degree of disorder, hopping distance, hopping energy are estimated. In optical properties, we have studied Fourier transform infra-red spectra and the photoluminescence of this amorphous silicon thin film. It is found that these amorphous silicon nanoparticles exhibits strong Si-O-Si stretching mode at 1060 cm-1, which suggests that the large amount of oxygen is adsorbed on the surface of these a-Si nanoparticles. The photoluminescence observed from these amorphous silicon nanoparticles has been explained with the help of oxygen related surface state mechanism.

  2. Amorphous indium gallium zinc oxide thin film grown by pulse laser deposition technique

    Science.gov (United States)

    Mistry, Bhaumik V.; Joshi, U. S.

    2016-05-01

    Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10-3 V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×1018 cm3, while the Hall mobility of the IGZO thin film was 16 cm2 V-1S-1.

  3. Spontaneous Hall effect in amorphous Tb - Fe and Sm - Fe thin films

    International Nuclear Information System (INIS)

    The spontaneous Hall effect in amorphous Tb - Fe and Sm - Fe thin films, which possess excellent magnetic softness, is investigated to seek a possibility of practical applications of these thin films. The resistivity of Tb - Fe thin films ranges from 180 to 250 μΩcm as the Tb content varies from 35 to 46 at.%. Tb - Fe thin films show negative Hall resistivity ranging from -7.3 to -5.0 μΩcm in the same composition range, giving the normalized resistivity ratio from -4.1% to -2.0%. On the other hand, the resistivity of Sm - Fe thin films ranges from 150 to 166 μΩcm as the Sm content varies from 22 to 31 at.%. Sm - Fe thin films show positive Hall resistivity which varies from 7.1 to 2.8 μΩcm in the same composition range, giving the normalized resistivity ratio from 4.8% to 1.7%. Between the two different sets of samples, Tb - Fe thin films with perpendicular anisotropy are considered to be more suitable for practical applications, since saturation is reached at a low magnetic field. [copyright] 2001 American Institute of Physics

  4. Tunable giant magnetic anisotropy in amorphous SmCo thin films

    Energy Technology Data Exchange (ETDEWEB)

    Magnus, F.; Moubah, R.; Roos, A. H.; Kapaklis, V.; Hjoervarsson, B.; Andersson, G. [Department of Physics and Astronomy, Uppsala University, Box 530, 751 21 Uppsala (Sweden); Kruk, A. [AGH University of Science and Technology, Faculty of Metals Engineering and Industrial Computer Science, PL-30-059 Krakow (Poland); Hase, T. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2013-04-22

    SmCo thin films have been grown by magnetron sputtering at room temperature with a composition of 2-35 at. % Sm. Films with 5 at. % or higher Sm are amorphous and smooth. A giant tunable uniaxial in-plane magnetic anisotropy is induced in the films which peaks in the composition range 11-22 at. % Sm. This cross-over behavior is not due to changes in the atomic moments but rather the local configuration changes. The excellent layer perfection combined with highly tunable magnetic properties make these films important for spintronics applications.

  5. Tunable giant magnetic anisotropy in amorphous SmCo thin films

    International Nuclear Information System (INIS)

    SmCo thin films have been grown by magnetron sputtering at room temperature with a composition of 2–35 at. % Sm. Films with 5 at. % or higher Sm are amorphous and smooth. A giant tunable uniaxial in-plane magnetic anisotropy is induced in the films which peaks in the composition range 11–22 at. % Sm. This cross-over behavior is not due to changes in the atomic moments but rather the local configuration changes. The excellent layer perfection combined with highly tunable magnetic properties make these films important for spintronics applications.

  6. Al-induced Lateral Crystallization of Amorphous Si Thin Films by Microwave Annealing

    Institute of Scientific and Technical Information of China (English)

    RAO Rui; XU Zhong-yang; ZENG Xiang-bing

    2002-01-01

    Al-induced lateral crystallization of amorphous silicon thin films by microwave annealing is investigated. The crystallized Si films are examined by optical microscopy , Raman spectroscopy, transmission electron microscopy and transmission electron diffraction micrography. After microwave annealing at 480 ℃ for 50 min,the amorphous Si is completely crystallized with large grains of main ( 111 ) orientation. The rate of lateral crystallization is 0.04μm/min. This process, labeled MILC-MA, not only lowers the temperature but also reduces the time of crystallization. The crystallization mechanism during microwave annealing and the electrical properties of polycrystalline Si thin films are analyzed. This MILC-MA process has potential applications in large area electronics.

  7. Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

    Institute of Scientific and Technical Information of China (English)

    郑艳彬; 李光; 王文龙; 李秀昌; 姜志刚

    2012-01-01

    Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) backplane technology is the best candidate for flat panel displays (FPDs). In this paper, a-IGZO TFT structures are described. The effects of etch parameters (rf power, dc-bias voltage and gas pressure) on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs.

  8. Tetrahedral Amorphous Carbon (ta-C) Ultra Thin Films for Slider Overcoat Application

    Science.gov (United States)

    Shi, X.; Hu, Y. H.; Hu, L.

    Tetrahedral Amorphous Carbon (ta-C) thin film by using Filtered Cathodic Vacuum Arc (FCVA) technique has proven to be wear-resistive and corrosion resistant for a wide range of electrical, optical, and mechanical applications. Many investigations have shown that the ta-C film prepared by the FCVA technique can provide a superior ultra thin overcoat for the sliders and media compared to ECR-CVD and IBD coating technology. The ta-C film excels in terms of the film density, hardness, surface roughness and corrosion resistance. Nanofilm Technology International (NTI) has successfully developed and commercialized the FCVA coating system (FS series) for the slider overcoat application, which provides a good quality film with a high hardness (~50 GPa), low stress (2~3 GPa), low macro-particle density (~1/cm2 for particles > 0.3 μm), good uniformity (production repeatability (< 5%).

  9. Deposit of thin films of nitrided amorphous carbon using the laser ablation technique

    International Nuclear Information System (INIS)

    It is reported the synthesis and characterization of thin films of amorphous carbon (a-C) nitrided, deposited by laser ablation in a nitrogen atmosphere at pressures which are from 4.5 x 10 -4 Torr until 7.5 x 10 -2 Torr. The structural properties of the films are studied by Raman spectroscopy obtaining similar spectra at the reported for carbon films type diamond. The study of behavior of the energy gap and the ratio nitrogen/carbon (N/C) in the films, shows that the energy gap is reduced when the nitrogen incorporation is increased. It is showed that the refraction index of the thin films diminish as nitrogen pressure is increased, indicating the formation of graphitic material. (Author)

  10. Size effects on the thermal conductivity of amorphous silicon thin films

    Science.gov (United States)

    Braun, Jeffrey L.; Baker, Christopher H.; Giri, Ashutosh; Elahi, Mirza; Artyushkova, Kateryna; Beechem, Thomas E.; Norris, Pamela M.; Leseman, Zayd C.; Gaskins, John T.; Hopkins, Patrick E.

    2016-04-01

    We investigate thickness-limited size effects on the thermal conductivity of amorphous silicon thin films ranging from 3 to 1636 nm grown via sputter deposition. While exhibiting a constant value up to ˜100 nm, the thermal conductivity increases with film thickness thereafter. The thickness dependence we demonstrate is ascribed to boundary scattering of long wavelength vibrations and an interplay between the energy transfer associated with propagating modes (propagons) and nonpropagating modes (diffusons). A crossover from propagon to diffuson modes is deduced to occur at a frequency of ˜1.8 THz via simple analytical arguments. These results provide empirical evidence of size effects on the thermal conductivity of amorphous silicon and systematic experimental insight into the nature of vibrational thermal transport in amorphous solids.

  11. Formation and structure of V-Zr amorphous alloy thin films

    KAUST Repository

    King, Daniel J M

    2015-01-01

    Although the equilibrium phase diagram predicts that alloys in the central part of the V-Zr system should consist of V2Zr Laves phase with partial segregation of one element, it is known that under non-equilibrium conditions these materials can form amorphous structures. Here we examine the structures and stabilities of thin film V-Zr alloys deposited at room temperature by magnetron sputtering. The films were characterized by X-ray diffraction, transmission electron microscopy and computational methods. Atomic-scale modelling was used to investigate the enthalpies of formation of the various competing structures. The calculations confirmed that an amorphous solid solution would be significantly more stable than a random body-centred solid solution of the elements, in agreement with the experimental results. In addition, the modelling effort provided insight into the probable atomic configurations of the amorphous structures allowing predictions of the average distance to the first and second nearest neighbours in the system.

  12. Formation and structure of V–Zr amorphous alloy thin films

    International Nuclear Information System (INIS)

    Although the equilibrium phase diagram predicts that alloys in the central part of the V–Zr system should consist of V2Zr Laves phase with partial segregation of one element, it is known that under non-equilibrium conditions these materials can form amorphous structures. Here we examine the structures and stabilities of thin film V–Zr alloys deposited at room temperature by magnetron sputtering. The films were characterized by X-ray diffraction, transmission electron microscopy and computational methods. Atomic-scale modelling was used to investigate the enthalpies of formation of the various competing structures. The calculations confirmed that an amorphous solid solution would be significantly more stable than a random body-centred solid solution of the elements, in agreement with the experimental results. In addition, the modelling effort provided insight into the probable atomic configurations of the amorphous structures allowing predictions of the average distance to the first and second nearest neighbours in the system

  13. Electrical, electronic and optical properties of amorphous indium zinc tin oxide thin films

    International Nuclear Information System (INIS)

    Highlights: • The electronic property of indium zinc tin oxide thin films was investigated by using XPS and REELS. • The band gap varied with different In/Zn/Sn compositions. • The EXAFS results showed that the smaller Zn–Zn separation distance led to higher electron mobility. • The Sn/Zn composition ratio played a crucial role in improving the electrical properties of a-IZTO thin films. - Abstract: The electrical and optical properties of amorphous indium zinc tin oxide (a-IZTO) thin films were examined as a function of chemical composition. Effects of Sn/Zn composition ratio and In content on the electrical and optical properties of a-IZTO thin films are discussed. The electron mobility of thin film transistors with higher Sn/Zn composition ratio was dramatically improved due to a shorter zinc–zinc separation distance. The thin film transistor with the composition of In:Zn:Sn = 20:48:32 exhibits a high mobility of 30.6 cm2 V−1 s−1 and a high on–off current ratio of 109

  14. Adjustable optical response of amorphous silicon nanowires integrated with thin films.

    Science.gov (United States)

    Dhindsa, Navneet; Walia, Jaspreet; Pathirane, Minoli; Khodadad, Iman; Wong, William S; Saini, Simarjeet Singh

    2016-04-01

    We experimentally demonstrate a new optical platform by integrating hydrogenated amorphous silicon nanowire arrays with thin films deposited on transparent substrates like glass. A 535 nm thick thin film is anisotropically etched to fabricate vertical nanowire arrays of 100 nm diameter arranged in a square lattice. Adjusting the nanowire length, and consequently the thin film thickness permits the optical properties of this configuration to be tuned for either transmission filter response or enhanced broadband absorption. Vivid structural colors are also achieved in reflection and transmission. The optical properties of the platform are investigated for three different etch depths. Transmission filter response is achieved for a configuration with nanowires on glass without any thin film. Alternatively, integrating thin film with nanowires increases the absorption efficiency by ∼97% compared to the thin film starting layer and by ∼78% over nanowires on glass. The ability to tune the optical response of this material in this fashion makes it a promising platform for high performance photovoltaics, photodetectors and sensors. PMID:26906427

  15. Study of some structural properties of hydrogenated amorphous silicon thin films prepared by radiofrequency cathodic sputtering

    International Nuclear Information System (INIS)

    In this work, we have used the grazing X-rays reflectometry technique to characterise hydrogenated amorphous silicon thin films deposited by radio-frequency cathodic sputtering. Relfectometry measurements are taken immediately after films deposition as well as after having naturally oxidised their surfaces during a more or less prolonged stay in the ambient. For the films examined just after deposition, the role of hydrogen appears in the increase of their density. For those analysed after a short stay in the ambient, hydrogen plays a protective role against the oxidation of their surfaces. This role disappears when the stay in the ambient is so long. (author)

  16. Spectroscopy and structural properties of amorphous and nanocrystalline silicon carbide thin films

    OpenAIRE

    Halindintwali, Sylvain; Knoesen, D.; B.A. Julies; Arendse, C.J.; Muller, T; Gengler, Régis Y N; Rudolf, P.; van Loosdrecht, P.H.M.

    2011-01-01

    Amorphous SiC:H thin films were grown by hot wire chemical vapour deposition from a SiH4/CH4/H2 mixture at a substrate temperature below 400 °C. Thermal annealing in an argon environment up to 900 °C shows that the films crystallize as μc-Si:H and SiC with a porous microstructure that favours an oxidation process. By a combination of spectroscopic tools comprising Fourier transform infrared, Raman scattering and X-rays photoelectron spectroscopy we show that the films evolve from the amorphou...

  17. Fabrication of amorphous silicon nanoribbons by atomic force microscope tip induced local oxidation for thin film device applications

    OpenAIRE

    Pichon, Laurent; Rogel, Regis; Demami, Fouad

    2010-01-01

    WOS International audience We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as mask for the elaboration of thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as mask during plasma etching of the amorphous layer leading to the formation of nanoribbon. Such amorpho...

  18. Gallium-lanthanum-sulphide amorphous thin films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Thin amorphous gallium-lanthanum-sulphide films were prepared by pulsed laser deposition method. The prepared layers were characterized in terms of the structure (using Raman scattering spectroscopy), chemical composition (by energy-dispersive X-ray analysis), and optical properties (employing variable angle spectroscopic ellipsometry). Following Raman spectroscopy results, it is supposed that the structure of the bulk glass and corresponding thin films is formed by GaS4 tetrahedra and LaS8 structural units. The study of photo- and thermally induced phenomena in prepared amorphous chalcogenides shows photoinduced decrease of refractive index (∼1-2%) under cw (473 nm) or pulsed (248 nm) laser irradiation and annealing-induced decrease of refractive index (∼2%), respectively.

  19. Gallium-lanthanum-sulphide amorphous thin films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Nemec, P., E-mail: Petr.Nemec@upce.cz [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210 Pardubice (Czech Republic); Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.fr [Equipe Verres et Ceramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Universite de Rennes 1, 35042 Rennes (France); Pavlista, M., E-mail: martin.pavlista@upce.cz [Department of Physics, Faculty of Chemical Technology, University of Pardubice, Studentska 84, 53210 Pardubice (Czech Republic); Moreac, A., E-mail: alain.moreac@univ-rennes1.fr [GMCM, UMR-CNRS 6626, Universite de Rennes 1, 35042 Rennes (France); Frumar, M., E-mail: miloslav.frumar@upce.cz [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210 Pardubice (Czech Republic); Vlcek, M., E-mail: milan.vlcek@upce.cz [Joint Laboratory of Solid State Chemistry of the University of Pardubice and the Institute of Macromolecular Chemistry of Acad. Sci. of the Czech Republic, Studentska 84, 53210 Pardubice (Czech Republic)

    2009-09-15

    Thin amorphous gallium-lanthanum-sulphide films were prepared by pulsed laser deposition method. The prepared layers were characterized in terms of the structure (using Raman scattering spectroscopy), chemical composition (by energy-dispersive X-ray analysis), and optical properties (employing variable angle spectroscopic ellipsometry). Following Raman spectroscopy results, it is supposed that the structure of the bulk glass and corresponding thin films is formed by GaS{sub 4} tetrahedra and LaS{sub 8} structural units. The study of photo- and thermally induced phenomena in prepared amorphous chalcogenides shows photoinduced decrease of refractive index ({approx}1-2%) under cw (473 nm) or pulsed (248 nm) laser irradiation and annealing-induced decrease of refractive index ({approx}2%), respectively.

  20. Photonic bandgap amorphous chalcogenide thin films with multilayered structure grown by pulsed laser deposition method

    Science.gov (United States)

    Zhang, Shao-qian; Němec, Petre; Nazabal, Virginie; Jin, Yu-qi

    2016-05-01

    Amorphous chalcogenide thin films were fabricated by the pulsed laser deposition technique. Thereafter, the stacks of multilayered thin films for reflectors and microcavity were designed for telecommunication wavelength. The prepared multilayered thin films for reflectors show good compatibility. The microcavity structure consists of Ge25Ga5Sb10S65 (doped with Er3+) spacer layer surrounded by two 5-layer As40Se60/Ge25Sb5S70 reflectors. Scanning/transmission electron microscopy results show good periodicity, great adherence and smooth interfaces between the alternating dielectric layers, which confirms a suitable compatibility between different materials. The results demonstrate that the chalcogenides can be used for preparing vertical Bragg reflectors and microcavity with high quality.

  1. Nanomechanical morphology of amorphous, transition, and crystalline domains in phase change memory thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bosse, J.L. [Department of Materials Science and Engineering, University of Connecticut, 97 North Eagleville Road, Unit 3136, Storrs, CT 06269-3136 (United States); Grishin, I. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom); Huey, B.D. [Department of Materials Science and Engineering, University of Connecticut, 97 North Eagleville Road, Unit 3136, Storrs, CT 06269-3136 (United States); Kolosov, O.V., E-mail: o.kolosov@lancaster.ac.uk [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2014-09-30

    Highlights: • The nanomechanical morphology of GeTe and Ge{sub 2}Sb{sub 2}Te{sub 5} phase change memory thin films are investigated with combined ultrasonic force microscopy and beam exit Ar ion polishing. • Both plan-view and shallow-angle cross-sections are investigated for each stoichiometry. • Contrast in the nanomechanical response due to stiffness variations between the amorphous and crystalline phases are demonstrated up to 14% and 20% for the normal and cross-sectioned films, respectively. - Abstract: In the search for phase change materials (PCM) that may rival traditional random access memory, a complete understanding of the amorphous to crystalline phase transition is required. For the well-known Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) and GeTe (GT) chalcogenides, which display nucleation and growth dominated crystallization kinetics, respectively, this work explores the nanomechanical morphology of amorphous and crystalline phases in 50 nm thin films. Subjecting these PCM specimens to a lateral thermal gradient spanning the crystallization temperature allows for a detailed morphological investigation. Surface and depth-dependent analyses of the resulting amorphous, transition and crystalline regions are achieved with shallow angle cross-sections, uniquely implemented with beam exit Ar ion polishing. To resolve the distinct phases, ultrasonic force microscopy (UFM) with simultaneous topography is implemented revealing a relative stiffness contrast between the amorphous and crystalline phases of 14% for the free film surface and 20% for the cross-sectioned surface. Nucleation is observed to occur preferentially at the PCM-substrate and free film interface for both GST and GT, while fine subsurface structures are found to be sputtering direction dependent. Combining surface and cross-section nanomechanical mapping in this manner allows 3D analysis of microstructure and defects with nanoscale lateral and depth resolution, applicable to a wide range of

  2. Nitrogen effects on crystallization kinetics of amorphous TiOxNy thin films

    OpenAIRE

    Hukari, Kyle; Dannenberg, Rand; Stach, E. A.

    2001-01-01

    The crystallization behavior of amorphous TiOxNy (x>>y) thin films was investigated by in-situ transmission electron microscopy. The Johnson-Mehl-Avrami-Kozolog (JMAK) theory is used to determine the Avrami exponent, activation energy, and the phase velocity pre-exponent. Addition of nitrogen inhibits diffusion, increasing the nucleation temperature, while decreasing the growth activation energy. Kinetic variables extracted from individual crystallites are compared to JMAK analysis of t...

  3. Failure analysis of thin-film amorphous-silicon solar-cell modules

    Science.gov (United States)

    Kim, Q.

    1984-01-01

    A failure analysis of thin film amorphous silicon solar cell modules was conducted. The purpose of this analysis is to provide information and data for appropriate corrective action that could result in improvements in product quality and reliability. Existing techniques were expanded in order to evaluate and characterize degradational performance of a-Si solar cells. Microscopic and macroscopic defects and flaws that significantly contribute to performance degradation were investigated.

  4. Optimization of amorphous silicon thin film solar cells for flexible photovoltaics

    OpenAIRE

    Söderström, T; Haug, F. -J.; Terrazzoni-Daudrix, V.; Ballif, C.

    2008-01-01

    We investigate amorphous silicon (a-Si:H) thin film solar cells in the n-i-p or substrate configuration that allows the use of nontransparent and flexible substrates such as metal or plastic foils such as polyethylene- naphtalate (PEN). A substrate texture is used to scatter the light at each interface, which increases the light trapping in the active layer. In the first part, we investigate the relationship between the substrate morphology and the short circui...

  5. Electroless deposition and characterization of Pd thin films on hydrogenated amorphous silicon

    International Nuclear Information System (INIS)

    This paper reports on electroless palladium thin films deposited on hydrogenated amorphous Si from a palladium-ammine bath. The d.c. magnetron reactive sputtered 18% hydrogenated amorphous silicon (a-Si:H) possessed a hydrogen passivated surface, using an activation step prior to the electroless deposition to obtain a film with good uniformity. The specially prepared hypophosphite-based dilute metal ion bath exhibited good stability as low operating temperatures of 35--50 degrees C. The morphology and microstructure of the Pd aggregates were characterized by scanning transmission electron microscopy (STEM) and energy dispersive x-ray spectroscopy (EDX), while the Pd aggregates and as-deposited films from the citrate and NH3/NH4Cl baths were examined by scanning electron microscopy (SEM). Marked differences in morphology and distribution of the Pd aggregates on activated a-Si:H and c-Si substrates were observed and discussed

  6. Preparation and characterizations of amorphous nanostructured SiC thin films by low energy pulsed laser deposition

    International Nuclear Information System (INIS)

    Amorphous silicon carbide (SiC) thin films were deposited on silicon substrates by pulsed laser ablation at room temperature. Thicknesses and surface morphology of the thin films were characterized using optical profilers, atomic force and field emission scanning electron microscopy. Nanohardnes, modulus and scratch resistance properties were determined using XP nanoindenter. The results show that crack free, smooth and nanostructured thin films can be deposited using low laser energy densities.

  7. Topological insulator thin films starting from the amorphous phase-Bi2Se3 as example

    International Nuclear Information System (INIS)

    We present a new method to obtain topological insulator Bi2Se3 thin films with a centimeter large lateral length. To produce amorphous Bi2Se3 thin films, we have used a sequential flash-evaporation method at room temperature. Transmission electron microscopy has been used to verify that the prepared samples are in a pure amorphous state. During annealing, the samples transform into the rhombohedral Bi2Se3 crystalline structure which was confirmed using X-ray diffraction and Raman spectroscopy. Resistance measurements of the amorphous films show the expected Mott variable range hopping conduction process with a high specific resistance compared to the one obtained in the crystalline phase (metallic behavior). We have measured the magnetoresistance and the Hall effect at different temperatures between 2 K and 275 K. At temperatures T ≲ 50 K and fields B ≲ 1 T, we observe weak anti-localization in the MR; the Hall measurements confirm the n-type character of the samples. All experimental results of our films are in quantitative agreement with results from samples prepared using more sophisticated methods

  8. Geometric photovoltaics applied to amorphous silicon thin film solar cells

    Science.gov (United States)

    Kirkpatrick, Timothy

    Geometrically generalized analytical expressions for device transport are derived from first principles for a photovoltaic junction. Subsequently, conventional planar and unconventional coaxial and hemispherical photovoltaic architectures are applied to detail the device physics of the junction based on their respective geometry. For the conventional planar cell, the one-dimensional transport equations governing carrier dynamics are recovered. For the unconventional coaxial and hemispherical junction designs, new multi-dimensional transport equations are revealed. Physical effects such as carrier generation and recombination are compared for each cell architecture, providing insight as to how non-planar junctions may potentially enable greater energy conversion efficiencies. Numerical simulations are performed for arrays of vertically aligned, nanostructured coaxial and hemispherical amorphous silicon solar cells and results are compared to those from simulations performed for the standard planar junction. Results indicate that fundamental physical changes in the spatial dependence of the energy band profile across the intrinsic region of an amorphous silicon p-i-n junction manifest as an increase in recombination current for non-planar photovoltaic architectures. Despite an increase in recombination current, however, the coaxial architecture still appears to be able to surpass the efficiency predicted for the planar geometry, due to the geometry of the junction leading to a decoupling of optics and electronics.

  9. Self-organization of a periodic structure between amorphous and crystalline phases in a GeTe thin film induced by femtosecond laser pulse amorphization

    International Nuclear Information System (INIS)

    A self-organized fringe pattern in a single amorphous mark of a GeTe thin film was formed by multiple femtosecond pulse amorphization. Micro Raman measurement indicates that the fringe is a periodic alternation between crystalline and amorphous phases. The period of the fringe is smaller than the irradiation wavelength and the direction is parallel to the polarization direction. Snapshot observation revealed that the fringe pattern manifests itself via a complex but coherent process, which is attributed to crystallization properties unique to a nonthermally amorphized phase and the distinct optical contrast between crystalline and amorphous phases.

  10. Morphological characteristics and optical properties of hydrogenated amorphous silicon thin films

    Science.gov (United States)

    Tang, Haihua; Liu, Shuang; Zhou, Xiang; Liu, Yunfei; Chen, Dejun; Liu, Yong; Zhong, Zhiyong

    2016-05-01

    Hydrogenated amorphous silicon (a-Si:H) thin films were prepared by radio frequency (RF) plasma enhanced chemical vapor deposition (RF-PECVD) technique with silane (SiH4) as reactive gas. The influence of process parameters on the morphological characteristics and optical properties of a-Si:H thin films were systematically investigated. When the RF power density was taken as the only variable, it firstly improves the smoothness of the surface with increasing the RF power density below the value of 0.17 W/cm2, and then exhibits an obvious degradation at further power density. The refractive index, extinction coefficient, optical energy gap initially increase and reach a maximum at 0.17 W/cm2, followed by a significant decrease with further RF power density. When the RF power density was taken as the only variable, the surface of a-Si:H thin films become smoother by increasing the reaction pressure in the investigated range (from 50 Pa to 140 Pa), and the refractive index, extinction coefficient, optical energy gap increase with increasing of reaction pressure. The effect of RF power density and the reaction pressure on the morphological characteristics and optical properties of a-Si:H thin films was obtained, contributing to the further studies of the performance and applications of a-Si:H thin films.

  11. A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.

    Science.gov (United States)

    Ha, Tae-Jun; Cho, Won-Ju; Chung, Hong-Bay; Koo, Sang-Mo

    2015-09-01

    We investigate photo-induced instability in thin-film transistors (TFTs) consisting of amorphous indium-gallium-zinc-oxide (a-IGZO) as active semiconducting layers by comparing with hydrogenated amorphous silicon (a-Si:H). An a-IGZO TFT exhibits a large hysteresis window in the illuminated measuring condition but no hysteresis window in the dark condition. On the contrary, a large hysteresis window measured in the dark condition in a-Si:H was not observed in the illuminated condition. Even though such materials possess the structure of amorphous phase, optical responses or photo instability in TFTs looks different from each other. Photo-induced hysteresis results from initially trapped charges at the interface between semiconductor and dielectric films or in the gate dielectric which possess absorption energy to interact with deep trap-states and affect the movement of Fermi energy level. In order to support our claim, we also perform CV characteristics in photo-induced hysteresis and demonstrate thermal-activated hysteresis. We believe that this work can provide important information to understand different material systems for optical engineering which includes charge transport and band transition. PMID:26716230

  12. Soft x-ray reflectivity measurements of amorphous carbon thin films using Indus-I

    International Nuclear Information System (INIS)

    Using Indus-I synchrotron radiation source, the soft x-ray reflectivity measurements have been performed on electron beam deposited amorphous carbon thin films. The study shows that soft x-ray reflectivity is an extremely effective, accurate and non-destructive technique for measuring thickness, density and microscopic roughness. High q- space resolution at larger wavelength permits to investigate thicker films in the range of 100 to 3000 A. Our simulation study for hard x-ray region reveals that the instrumental resolution factor limits the probing thickness range. (author)

  13. Amorphous lanthanum lutetium oxide thin films as an alternative high-k gate dielectric

    OpenAIRE

    Lopes, J. M. J.; Roeckerath, M.; Schlom, D. G.; Heeg, T.; Rije, E.; Schubert, J; Mantl, S.; Afanas'ev, V.V.; Shamuilia, S.; Stesmans, A.; Jia, Y.

    2006-01-01

    Lanthanum lutetium oxide thin films were grown on (100) Si by pulsed laser deposition. Rutherford backscattering spectrometry, atomic force microscopy, x-ray diffraction, and x-ray reflectometry were employed to investigate the samples. The results indicate the growth of stoichiometric and smooth LaLuO3 films that remain amorphous up to 1000 degrees C. Internal photoemission and photoconductivity measurements show a band gap width of 5.2 +/- 0.1 eV and symmetrical conduction and valence band ...

  14. Infrared Insight into the Network of Hydrogenated Amorphous and Polycrystalline Silicon thin Films

    Directory of Open Access Journals (Sweden)

    Jarmila Mullerova

    2006-01-01

    Full Text Available IR measurements were carried out on both amorphous and polycrystalline silicon samples deposited by PECVDon glass substrate. The transition from amorphous to polycrystalline phase was achieved by increasing dilution of silaneplasma at the deposition process. The samples were found to be mixed phase materials. Commonly, infrared spectra ofhydrogenated silicon thin films yield information about microstructure, hydrogen content and hydrogen bonding to silicon. Inthis paper, additional understanding was retrieved from infrared response. Applying standard optical laws, effective mediatheory and Clausius-Mossoti approach concerning the Si-Si and Si-H bonds under IR irradiation as individual oscillators,refractive indices in the long wavelength limit, crystalline, amorphous and voids volume fractions and the mass density of thefilms were determined. The mass density was found to decrease with increasing crystalline volume fraction, which can beattributed to the void-dominated mechanism of network formation.

  15. Ceramics and amorphous thin films based on gallium sulphide doped by rare-earth sulphides

    International Nuclear Information System (INIS)

    Bulk ceramics of Ga2S3 and rare-earth sulfides (EuS, Gd2S3, Er2S3) as well as combinations thereof have been prepared by spark plasma sintering (SPS). The disk-shaped ceramics were used as targets for pulsed laser deposition (PLD) experiments to obtain amorphous thin films. The properties of these new bulks and amorphous thin films have been investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDX), optical transmission spectroscopy, and atomic force microscopy (AFM). In order to test the photoexpansion effect in Ga2S3 and the possibility to create planar arrays of microlenses, the film was irradiated with femtosecond laser pulses at different powers. For low laser power pulses (up to 100 mW power per pulse) a photoexpansion effect was observed, which leads to formation of hillocks with a height of 40–50 nm. EuS doped Ga2S3 thin film shows luminescence properties, which recommend them for optoelectronic applications. (invited article)

  16. Nano-Impact (Fatigue Characterization of As-Deposited Amorphous Nitinol Thin Film

    Directory of Open Access Journals (Sweden)

    Rehan Ahmed

    2012-08-01

    Full Text Available This paper presents nano-impact (low cycle fatigue behavior of as-deposited amorphous nitinol (TiNi thin film deposited on Si wafer. The nitinol film was 3.5 µm thick and was deposited by the sputtering process. Nano-impact tests were conducted to comprehend the localized fatigue performance and failure modes of thin film using a calibrated nano-indenter NanoTest™, equipped with standard diamond Berkovich and conical indenter in the load range of 0.5 mN to 100 mN. Each nano-impact test was conducted for a total of 1000 fatigue cycles. Depth sensing approach was adapted to understand the mechanisms of film failure. Based on the depth-time data and surface observations of films using atomic force microscope, it is concluded that the shape of the indenter test probe is critical in inducing the localized indentation stress and film failure. The measurement technique proposed in this paper can be used to optimize the design of nitinol thin films.

  17. Tailoring anisotropy and domain structure in amorphous TbCo thin films through combinatorial methods

    International Nuclear Information System (INIS)

    We apply an in-plane external magnetic field during growth of amorphous TbCo thin films and examine the effects on the magnetic anisotropy and domain structure. A combinatorial approach is employed throughout the deposition and analysis to study a continuous range of compositions between 7–95 at.% Tb. Magnetometry measurements show that all samples have a strong out-of-plane anisotropy, much larger than any in-plane components, regardless of the presence of a growth field. However, magnetic force microscopy demonstrates that the growth field does indeed have a large effect on the magnetic domain structure, resulting in elongated domains aligned along the imprinting field direction. The results show that the anisotropy can be tuned in intricate ways in amorphous TbCo films giving rise to unusual domain structures. Furthermore the results reveal that a combinatorial approach is highly effective for mapping out these material properties. (paper)

  18. Structural relaxation of amorphous silicon carbide thin films in thermal annealing

    International Nuclear Information System (INIS)

    Amorphous Si0.4C0.6 thin films were deposited by radio frequency magnetron sputtering onto non-heated single crystal Si substrates, followed by annealing at 800 deg. C or 1100 deg. C in the vacuum chamber. The chemical bond properties and atomic local ordering as a function of the annealing temperature were characterized by Auger electron spectroscopy, scanning electron microscopy, X-ray photoelectron spectroscopy, Infrared absorption spectroscopy, X-ray diffraction, and Raman spectroscopy measurements. We have examined the evolution of microstructure in annealing-induced relaxation process, and investigated the initial stages of thermal crystallization of amorphous Si0.4C0.6. Meanwhile, the structure of excess C in the films also has been studied

  19. Photodecomposition of Hg - Photo - CVD monosilane. Application to hydrogenated amorphous silicon thin films

    International Nuclear Information System (INIS)

    The construction of a Hg-photo-CVD device is discussed. The system enables the manufacturing of hydrogenous thin films of amorphous silicon from monosilane compound. The reaction mechanisms taking place in the gaseous phase and at the surface, and the optimal conditions for the amorphous silicon film growth are studied. The analysis technique is based on the measurement of the difference between the condensation points of the gaseous components of the mixture obtained from the monosilane photolysis. A kinetic simplified model is proposed. Conductivity measurements are performed and the heat treatment effects are analyzed. Trace amounts of oxygen and carbon are found in the material. No Hg traces are detected by SIMS analysis

  20. Permeability of Ultra-Thin Amorphous Carbon Films

    Directory of Open Access Journals (Sweden)

    Bubenchikov Mikhail A.

    2016-01-01

    Full Text Available The present paper deals with defining the energy of interaction between an ultra-thin hydrocarbon layer and helium molecules using a modification of the LJ-potential and the continual approach. The suggested approach allows determination of the statistically average motion of a test molecule through material layers under consideration. The obtained results made it possible to localize global sorption zones both inside the layer and at its external borders and to identify the parameters which are responsible for permeability of the layer.

  1. Crystallization study of amorphous sputtered NiTi bi-layer thin film

    Energy Technology Data Exchange (ETDEWEB)

    Mohri, Maryam, E-mail: mmohri@ut.ac.ir [School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany); Nili-Ahmadabadi, Mahmoud [School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Center of Excellence for High Performance Materials, University of Tehran, Tehran (Iran, Islamic Republic of); Chakravadhanula, Venkata Sai Kiran [Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany)

    2015-05-15

    The crystallization of Ni-rich/NiTiCu bi-layer thin film deposited by magnetron sputtering from two separate alloy targets was investigated. To achieve the shape memory effect, the NiTi thin films deposited at room temperature with amorphous structure were annealed at 773 K for 15, 30, and 60 min for crystallization. Characterization of the films was carried out by differential scanning calorimetry to indicate the crystallization temperature, grazing incidence X-ray diffraction to identify the phase structures, atomic force microscopy to evaluate surface morphology, scanning transmission electron microscopy to study the cross section of the thin films. The results show that the structure of the annealed thin films strongly depends on the temperature and time of the annealing. Crystalline grains nucleated first at the surface and then grew inward to form columnar grains. Furthermore, the crystallization behavior was markedly affected by composition variations. - Highlights: • A developed bi-layer Ni45TiCu5/Ni50.8Ti was deposited on Si substrate and crystallized. • During crystallization, The Ni{sub 45}TiCu{sub 5} layer is thermally less stable than the Ni-rich layer. • The activation energy is 302 and 464 kJ/mol for Cu-rich and Ni-rich layer in bi-layer, respectively.

  2. Crystallization study of amorphous sputtered NiTi bi-layer thin film

    International Nuclear Information System (INIS)

    The crystallization of Ni-rich/NiTiCu bi-layer thin film deposited by magnetron sputtering from two separate alloy targets was investigated. To achieve the shape memory effect, the NiTi thin films deposited at room temperature with amorphous structure were annealed at 773 K for 15, 30, and 60 min for crystallization. Characterization of the films was carried out by differential scanning calorimetry to indicate the crystallization temperature, grazing incidence X-ray diffraction to identify the phase structures, atomic force microscopy to evaluate surface morphology, scanning transmission electron microscopy to study the cross section of the thin films. The results show that the structure of the annealed thin films strongly depends on the temperature and time of the annealing. Crystalline grains nucleated first at the surface and then grew inward to form columnar grains. Furthermore, the crystallization behavior was markedly affected by composition variations. - Highlights: • A developed bi-layer Ni45TiCu5/Ni50.8Ti was deposited on Si substrate and crystallized. • During crystallization, The Ni45TiCu5 layer is thermally less stable than the Ni-rich layer. • The activation energy is 302 and 464 kJ/mol for Cu-rich and Ni-rich layer in bi-layer, respectively

  3. Heterogeneous nucleation of the amorphous phase and dissolution of nanocrystalline grains in bilayer Al-Ge thin films

    Energy Technology Data Exchange (ETDEWEB)

    Raghavan, G.; Divakar, R.; Sundari, T.; Sundararaman, D.; Tyagi, A.K.; Krishan, K. [Indira Gandhi Center for Atomic Research, Kalpakkam (India)

    1997-12-18

    Solid State Amorphization Reaction (SSAR) was first reported in thin film couples of Au-La by Schwarz et al. Since then, many other systems have been shown to undergo SSAR. Various issues involved in SSAR have been extensively investigated and reviewed. The existence of a large negative heat of mixing, anomalous fast diffusion of one component, the requirement of heterogeneous nucleation sites such as grain boundaries are found to be some of the key features of solid state amorphization. The authors present in this paper evidence of heterogeneous nucleation and growth of the amorphous phase followed by the precipitation of germanium from the amorphous phase in Al-Ge bilayer films.

  4. Growth and interface of amorphous La2Hf2O7/Si thin film

    Institute of Scientific and Technical Information of China (English)

    CHENG Xuerui; QI Zeming; ZHANG Huanjun; ZHANG Guobin; PAN Guoqiang

    2012-01-01

    Amorphous La2Hf2O7 thin films were deposited on Si(100) substrate by pulsed laser deposition (PLD) method under different conditions.The interfacial states of the La2Hf2O7/Si films were studied by synchrotron X-ray reflectivity (XRR) and X-ray photoelectron spec-troscopy (XPS).When grown under vacuum condition,silicate,silicide and few SiOx were formed in the interface layer.However,the Hf-silicide formation could be effectively eliminated by the ambient oxygen pressure during film growth.The result revealed that the La2Hf2O7/Si interlayer was intimately related with growth condition.Insufficient supply of oxygen would cause Hf-silicide formation at the interface and it could be most effectively controlled by the ambient oxygen pressure during film growth.

  5. Influence of the additive Ag for crystallization of amorphous Ge-Sb-Te thin films

    International Nuclear Information System (INIS)

    We have investigated the optical and amorphous-to-crystalline transition properties in four-types of chalcogenide thin films; Ge2Sb2Te5, Ge8Sb2Te11, Ag-Ge2Sb2Te5 and Ag-Ge8Sb2Te11. Crystallization was caused by nano-pulse illumination (λ = 658 nm) with power (P) of 1-17 mW and pulse duration (t) of 10-460 ns, and the morphologies of crystallized spots were observed by SEM and microscope. It was found that the crystallized spot nearby linearly increases in size with increasing the illuminating energy (E = P · t) and eventually ablated out by over illumination. Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-vis-IR spectrophotometer. In addition, a speed of amorphous-to-crystalline transition was evaluated by detecting the reflection response signals for the nano-pulse scanning. Conclusively, the Ge8Sb2Te11 film has a faster crystallization speed than the Ge2Sb2Te5 film despite its higher crystallization temperature. The crystallization speed was largely improved by adding Ag in Ge2Sb2Te5 film but not in Ge8Sb2Te11 film. To explain these results, we considered a heat confinement by electron hopping.

  6. Drain bias effect on the instability of amorphous indium gallium zinc oxide thin film transistor

    International Nuclear Information System (INIS)

    We fabricated amorphous indium gallium zinc oxide thin film transistors (TFTs) in a top gate structure on a glass substrate. We investigated the effect of drain bias on the instability of the device. Although the device showed highly stable characteristics under both positive and negative gate bias stress, it showed significant degradation in the transfer characteristics under drain bias stress. The degradation phenomena are somewhat similar to those of negative gate bias illumination stress (NBIS). In the case of NBIS, degradation mechanisms have been confused between two kinds of illustrations, one of which is hole trapping in the gate insulator and the other is an increase of electron density in the active layer. Our experimental results revealed that the degradation mechanism of drain bias stress is closer to the latter mechanism of NBIS in amorphous oxide TFTs. - Highlights: ► Drain bias also degrades amorphous oxide thin film transistors. ► Increase of electron density near the drain junction occurs under drain bias stress. ► Oxygen vacancies can be ionized through the impingement of fast electrons

  7. Characterization of amorphous and nanocomposite Nb–Si–C thin films deposited by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Nedfors, Nils, E-mail: nils.nedfors@kemi.uu.se [Department of Chemistry, The Ångström Laboratory, Uppsala University, SE-751 21 Uppsala (Sweden); Tengstrand, Olof [Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Flink, Axel [Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Impact Coatings AB, Westmansgatan 29, SE-582-16 Linköping (Sweden); Eklund, Per; Hultman, Lars [Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Jansson, Ulf [Department of Chemistry, The Ångström Laboratory, Uppsala University, SE-751 21 Uppsala (Sweden)

    2013-10-31

    Two series of Nb–Si–C thin films of different composition have been deposited using DC magnetron sputtering. In the first series the carbon content was kept at about 55 at.% while the Si/Nb ratio was varied and in the second series the C/Nb ratio was varied instead while the Si content was kept at about 45 at.%. The microstructure is strongly dependent on Si content and Nb–Si–C films containing more than 25 at.% Si exhibit an amorphous structure as determined by X-ray diffraction. Transmission electron microscopy, however, induces crystallisation during analysis, thus obstructing a more detailed analysis of the amorphous structure. X-ray photo-electron spectroscopy suggests that the amorphous films consist of a mixture of chemical bonds such as Nb–Si, Nb–C, and Si–C. The addition of Si results in a hardness decrease from 22 GPa for the binary Nb–C film to 18 – 19 GPa for the Si-containing films, while film resistivity increases from 211 μΩcm to 3215 μΩcm. Comparison with recently published results on DC magnetron sputtered Zr–Si–C films, deposited in the same system using the same Ar-plasma pressure, bias, and a slightly lower substrate temperature (300 °C instead of 350 °C), shows that hardness is primarily dependent on the amount of Si–C bonds rather than type of transition metal. The reduced elastic modulus on the other hand shows a dependency on the type of transition metal for the films. These trends for the mechanical properties suggest that high wear resistant (high H/E and H{sup 3}/E{sup 2} ratio) Me–Si–C films can be achieved by appropriate choice of film composition and transition metal. - Highlights: • Si reduces crystallinity, amorphous structure for films containing > 25 at.% Si. • Electron beam induced crystallization during transmission electron microscopy. • Hardness and resistivity are primarily dependent on the relative amount of C–Si bonds.

  8. An investigation of passivity and breakdown of amorphous chromium-bromine thin films for surface modification of metallic biomaterials

    Science.gov (United States)

    Cormier, Lyne Mercedes

    1998-12-01

    The objectives of this investigation of amorphous Cr-B thin films as prospective coatings for biomaterials applications were to (i) produce and characterize an amorphous Cr-B thin film coating by magnetron sputtering, (ii) evaluate its corrosion resistance in physiologically relevant electrolytes, and (iii) propose a mechanism for the formation/dissolution of the passive film formed on amorphous Cr-B in chloride-containing near-neutral salt electrolytes. Dense (zone T) amorphous Cr75B25 thin films produced by DC magnetron sputtering were found to be better corrosion barriers than nanoczystalline or porous (zone 1) amorphous Cr75B25 thin films. The growth morphology and microstructure were a function of the sputtering pressure and substrate temperature, in agreement with the structure zone model of Thornton. The passivity/loss of passivity of amorphous Cr 75B25 in near-neutral salt solutions was explained using a modified bipolar layer model. The chromate ions identified by X-Ray Photoelectron Spectroscopy (XPS) in the outer layer of the passive film were found to play a determinant role in the passive behaviour of amorphous Cr75B 25 thin films in salt solutions. In near-neutral salt solutions of pH = 5 to 7, a decrease in pH combined with an increase in chloride concentration resulted in less dissolution of the Cr75B25 thin films. The apparent breakdown potential at 240 mV (SCE) obtained by Cyclic Potentiodynamic Anodic Polarization (CPAP) was associated with oxidation of species within the passive film, but not to dissolution leading to immediate loss of passivity. Pit Propagation Rate (PPR) testing evaluated the stable pitting potential to be between 600 and 650 mV. Amorphous Cr75B25 thin films ranked the best among other Cr-based materials such as 316L stainless steel, CrB2 and Cr investigated in this study for general corrosion behaviour in NaCl and Hanks solutions by CPAP testing. In terms of corrosion resistance, amorphous Cr75B25 thin films were recognized

  9. Model for electron-beam-induced crystallization of amorphous Me-Si-C (Me = Nb or Zr) thin films

    OpenAIRE

    Tengstrand, Olof; Nedfors, Nils; Andersson, Matilda; Lu, Jun; Jansson, Ulf; Flink, Axel; Eklund, Per; Hultman, Lars

    2014-01-01

    We use transmission electron microscopy (TEM) for in-situ studies of electronbeam-induced crystallization behavior in thin films of amorphous transition metal silicon carbides based on Zr (group 4 element) and Nb (group 5). Higher silicon content stabilized the amorphous structure while no effects of carbon were detected. Films with Nb start to crystallize at lower electron doses than Zr-containing ones. During the crystallization equiaxed MeC grains are formed in all samples with larger grai...

  10. Amorphous Carbon Gold Nanocomposite Thin Films: Structural and Spectro-ellipsometric Analysis

    International Nuclear Information System (INIS)

    Spectroscopic Ellipsometry was used to determine the optical and structural properties of amorphous carbon:gold nanocomposite thin films deposited by dc magnetron co-sputtering at different deposition power. The incorporation of gold as small particles distributed in the amorphous carbon matrix was confirmed by X-ray Diffraction, Rutherford Backscattering measurements and High Resolution Transmission Electron Microscopy. Based on these results, an optical model for the films was developed using the Maxwell-Garnett effective medium with the Drude-Lorentz model representing the optical response of gold and the Tauc-Lorentz model for the amorphous carbon. The gold volume fraction and particle size obtained from the fitting processes were comparable to those from the physical characterization. The analysis of the ellipsometric spectra for all the samples showed strong changes in the optical properties of the carbon films as a consequence of the gold incorporation. These changes were correlated to the structural modification observed by Raman Spectroscopy, which indicated a clustering of the sp2 phase with a subsequent decrease in the optical gap. Finally, measurements of Reflection and Transmission Spectroscopy were carried out and Transmission Electron Microscopy images were obtained in order to support the ellipsometric model results.

  11. Structure and Optical Properties of Silicon Nanocrystals Embedded in Amorphous Silicon Thin Films Obtained by PECVD

    Directory of Open Access Journals (Sweden)

    B. M. Monroy

    2011-01-01

    Full Text Available Silicon nanocrystals embedded in amorphous silicon matrix were obtained by plasma enhanced chemical vapor deposition using dichlorosilane as silicon precursor. The RF power and dichlorosilane to hydrogen flow rate ratio were varied to obtain different crystalline fractions and average sizes of silicon nanocrystals. High-resolution transmission electron microscopy images and RAMAN measurements confirmed the existence of nanocrystals embedded in the amorphous matrix with average sizes between 2 and 6 nm. Different crystalline fractions (from 12% to 54% can be achieved in these films by regulating the selected growth parameters. The global optical constants of the films were obtained by UV-visible transmittance measurements. Effective band gap variations from 1.78 to 2.3 eV were confirmed by Tauc plot method. Absorption coefficients higher than standard amorphous silicon were obtained in these thin films for specific growth parameters. The relationship between the optical properties is discussed in terms of the different internal nanostructures of the samples.

  12. Baseline Evaluation of Thin-Film Amorphous Silicon, Copper Indium Diselenide, and Cadmium Telluride for the 21st Century: Preprint

    International Nuclear Information System (INIS)

    This paper examines three thin-film PV technologies: amorphous silicon, cadmium telluride, and copper indium selenide. The purpose is to: (1) assess their status and potential; (2) provide an improved set of criteria for comparing these existing thin films against any new PV technological alternatives, and examining the longer-term (c. 2050) potential of thin films to meet cost goals that would be competitive with conventional sources of energy without any added value from the substantial environmental advantages of PV. Among the conclusions are: (1) today's thin films have substantial economic potential, (2) any new approach to PV should be examined against the substantial achievements and potential of today's thin films, (3) the science and technology base of today's thin films needs substantial strengthening, (4) some need for alternative technologies exists, especially as the future PV marketplace expands beyond about 30 GW of annual production

  13. Direct measurement of free-energy barrier to nucleation of crystallites in amorphous silicon thin films

    Science.gov (United States)

    Shi, Frank G.

    1994-01-01

    A method is introduced to measure the free-energy barrier W(sup *), the activation energy, and activation entropy to nucleation of crystallites in amorphous solids, independent of the energy barrier to growth. The method allows one to determine the temperature dependence of W(sup *), and the effect of the preparation conditions of the initial amorphous phase, the dopants, and the crystallization methds on W(sup *). The method is applied to determine the free-energy barrier to nucleation of crystallites in amorphous silicon (a-Si) thin films. For thermally induced nucleation in a-Si thin films with annealing temperatures in the range of from 824 to 983 K, the free-energy barrier W(sup *) to nucleation of silicon crystals is about 2.0 - 2.1 eV regardless of the preparation conditions of the films. The observation supports the idea that a-Si transforms into an intermediate amorphous state through the structural relaxation prior to the onset of nucleation of crystallites in a-Si. The observation also indicates that the activation entropy may be an insignificant part of the free-energy barrier for the nucleation of crystallites in a-Si. Compared with the free-energy barrier to nucleation of crystallites in undoped a-Si films, a significant reduction is observed in the free-energy barrier to nucleation in Cu-doped a-Si films. For a-Si under irradiation of Xe(2+) at 10(exp 5) eV, the free-energy barrier to ion-induced nucleation of crystallites is shown to be about half of the value associated with thermal-induced nucleation of crystallites in a-Si under the otherwise same conditions, which is much more significant than previously expected. The present method has a general kinetic basis; it thus should be equally applicable to nucleation of crystallites in any amorphous elemental semiconductors and semiconductor alloys, metallic and polymeric glasses, and to nucleation of crystallites in melts and solutions.

  14. Analytical drain current model for amorphous IGZO thin-film transistors in above-threshold regime

    International Nuclear Information System (INIS)

    An analytical drain current model is presented for amorphous In-Ga-Zn-oxide thin-film transistors in the above-threshold regime, assuming an exponential trap states density within the bandgap. Using a charge sheet approximation, the trapped and free charge expressions are calculated, then the surface potential based drain current expression is developed. Moreover, threshold voltage based drain current expressions are presented using the Taylor expansion to the surface potential based drain current expression. The calculated results of the surface potential based and threshold voltage based drain current expressions are compared with experimental data and good agreements are achieved. (semiconductor devices)

  15. Analytical drain current model for amorphous IGZO thin-film transistors in abovethreshold regime

    Institute of Scientific and Technical Information of China (English)

    He Hongyu; Zheng Xueren

    2011-01-01

    An analytical drain current model is presented for amorphous In-Ga-Zn-oxide thin-film transistors in the above-threshold regime,assuming an exponential trap states density within the bandgap.Using a charge sheet approximation,the trapped and free charge expressions are calculated,then the surface potential based drain current expression is developed.Moreover,threshold voltage based drain current expressions are presented using the Taylor expansion to the surface potential based drain current expression.The calculated results of the surface potential based and threshold voltage based drain current expressions are compared with experimental data and good agreements are achieved.

  16. Amorphous Hydrogenated Carbon-Nitrogen Alloy Thin Films for Solar Cell Application

    Institute of Scientific and Technical Information of China (English)

    ZHOU Zhi-Bin; DING Zheng-Ming; PANG Qian-Jun; CUI Rong-Qiang

    2001-01-01

    Amorphous hydrogenated carbon-nitrogen alloy (a-CNx :H) thin films have been deposited on silicon substratesby improved dc magnetron sputtering from a graphite target in nitrogen and hydrogen gas discharging. Thefilms are investigated by using Raman spectroscopy, x-ray photoelectron spectroscopy, spectral ellipsometer and electron spin resonance techniques. The optimized process condition for solar cell application is discussed. Thephotovoltaic property of a-CNx:H/silicon heterojunctions can be improved by the adjustment of the pressureratio of hydrogen to nitrogen and unbalanced magnetic field intensity. Open-circuit voltage and short-circuitcurrent reach 300mV and 5.52 Ma/cm2, respectively.

  17. DC sputtered amorphous In-Sn-Zn-O thin-film transistors: Electrical properties and stability

    Science.gov (United States)

    Nakata, Mitsuru; Zhao, Chumin; Kanicki, Jerzy

    2016-02-01

    In this study, we investigated the electrical properties of DC sputtered amorphous In-Sn-Zn-O (a-ITZO) thin-film transistors (TFTs) fabricated under various process conditions. Fabricated a-ITZO TFTs achieved a threshold voltage (VT) of 1.0 V, subthreshold swing (SS) of 0.38 V/dec and field-effect mobility (μeff) of around 30 cm2/V s. An analytical field-effect mobility model is proposed for a-ITZO TFTs with key parameters extracted using different methods. The impacts of a-ITZO channel thickness and oxygen gas flow ratio on device performance were evaluated. Finally, the a-ITZO TFT bias-temperature stress (BTS) induced electrical instability was studied. In comparison to amorphous In-Ga-Zn-O (a-IGZO) TFTs, improved electrical stability was observed for a-ITZO TFTs using exactly the same BTS conditions.

  18. Mechanism of tailored magnetic anisotropy in amorphous Co68Fe24Zr8 thin films

    International Nuclear Information System (INIS)

    The mechanism of tailored magnetic anisotropy in amorphous Co68Fe24Zr8 thin films was investigated by ferromagnetic resonance (FMR) on samples deposited without an applied magnetic field, with an out-of-plane field and an in-plane field. Analysis of FMR spectra profiles, high frequency susceptibility calculations, and statistical simulations using a distribution of local uniaxial magnetic anisotropy reveal the presence of atomic configurations with local uniaxial anisotropy, of which the direction can be tailored while the magnitude remains at an intrinsically constant value of 3.0(2) kJ/m3. The in-plane growth field remarkably sharpens the anisotropy distribution and increases the sample homogeneity. The results benefit designing multilayer spintronic devices based on highly homogeneous amorphous layers with tailored magnetic anisotropy

  19. A delta-doped amorphous silicon thin-film transistor with high mobility and stability

    International Nuclear Information System (INIS)

    Ultrathin doped layers, known as delta-doped layers, were introduced within the intrinsic amorphous silicon (a-Si) active layer to fabricate hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with enhanced field-effect mobility. The performance of the delta-doped a-Si:H TFTs depended on the phosphine (PH3) flow rate and the distance from the n+ a-Si to the delta-doping layer. The delta-doped a-Si:H TFTs fabricated using a commercial manufacturing process exhibited an enhanced field-effect mobility of approximately ∼0.23 cm2/Vs (compared to a conventional a-Si:H TFT with 0.15 cm2/Vs) and a desirable stability under a bias-temperature stress test.

  20. The Urbach focus and optical properties of amorphous hydrogenated SiC thin films

    Science.gov (United States)

    Guerra, J. A.; Angulo, J. R.; Gomez, S.; Llamoza, J.; Montañez, L. M.; Tejada, A.; Töfflinger, J. A.; Winnacker, A.; Weingärtner, R.

    2016-05-01

    We report on the optical bandgap engineering of sputtered hydrogenated amorphous silicon carbide (a-SiC:H) thin films under different hydrogen dilution conditions during the deposition process and after post-deposition annealing treatments. The Tauc-gap and Urbach energy are calculated from ultraviolet-visible optical transmittance measurements. Additionally, the effect of the thermal annealing temperature on the hydrogen out-diffusion is assessed through infra-red absorption spectroscopy. A new model for the optical absorption of amorphous semiconductors is presented and employed to determine the bandgap as well as the Urbach energy from a single fit of the absorption coefficient. This model allowed the discrimination of the Urbach tail from the Tauc region without any external bias. Finally, the effect of the hydrogen dilution on the band-edge and the Urbach focus is discussed.

  1. Measurement of the magnetostriction constants of amorphous thin films on kapton substrates

    Science.gov (United States)

    Ouyang, C.; Kim, T. W.; Gambino, R. J.; Jahnes, C.

    1998-06-01

    The saturation magnetostriction constants of thin films of amorphous Co39Ni31Fe8Si8B14 and CoZrTb have been measured either by the small angle magnetization rotation (SAMR) method or by the initial susceptibility method. The SAMR method is used for the soft materials. When the material is magnetically hard or has a strong perpendicular anisotropy, the initial susceptibility method is used. It is found that the amorphous Co39Ni31Fe8Si8B14 prepared by ion beam deposition from an alloy target shows very soft magnetic properties and has a very small negative saturation magnetostriction, λs, of -1×10-7. Sputtered films of CoZrTb show a strong perpendicular anisotropy when the concentration of Tb is high. We have found that the SAMR method can be applied to CoZrTb films when the Tb content is low. The saturation magnetostricition constant of a sputtered film of Co78.4Zr20.8Tb0.8 is 2×106. When the Tb content is high, however, the initial susceptibility method is used to measure magnetostriction.

  2. Transition metal oxide window layer in thin film amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Pin-type hydrogenated amorphous silicon solar cells have been fabricated by replacing state of the art silicon based window layer with more transparent transition metal oxide (TMO) materials. Three kinds of TMOs: vanadium oxide, tungsten oxide, and molybdenum oxide (MoOx) were comparatively investigated to reveal the design principles of metal oxide window layers. It was found that MoOx exhibited the best performance due to its higher work function property compared to other materials. In addition, the band alignment between MoOx and amorphous Si controls the series resistance, which was verified through compositional variation of MoOx thin films. The design principles of TMO window layer in amorphous Si solar cells are summarized as follows: A wide optical bandgap larger than 3.0 eV, a high work function larger than 5.2 eV, and a band alignment condition rendering efficient hole collection from amorphous Si absorber layer. - Highlights: • High work function metal oxides can potentially replace the conventional p-a-SiC. • V2Ox, WOx, and MoOx are comparatively investigated in this study. • MoOx is the most relevant material due to its highest work function. • Slightly oxygen deficient MoOx exhibited performance enhancement at x = 2.9

  3. Thickness dependent electronic structure of ultra-thin tetrahedral amorphous carbon (ta-C) films

    International Nuclear Information System (INIS)

    Microstructural properties of ultrathin (1–10 nm) tetrahedral amorphous carbon (ta-C) films are investigated by Near Edge X-ray Absorption Fine Structure (NEXAFS) spectroscopy, X-ray Photoelectron Spectroscopy, Raman spectroscopy and Atomic Force Microscopy (AFM). The CK-edge NEXAFS spectra of 1 nm ta-C films provided evidence of surface defects (C―H bonds) which rapidly diminish with increasing film thickness. A critical thickness for stabilization of largely sp3 matrix structure distorted by sp2 sites is observed via the change of π*C=C peak behavior. Meanwhile, an increase in the film thickness promotes an enhancement in sp3 content, the film roughness remains nearly constant as probed by spectroscopic techniques and AFM, respectively. The effect of thickness on local bonding states of ultrathin ta-C films proves to be the limiting factor for their potential use in magnetic and optical storage devices. - Highlights: ► Filtered Cathodic Vacuum Arc deposited ultra-thin ta-C films (1–10 nm thick). ► CK-edge NEXAFS provides evidence of surface defects (C―H bonds). ► Concentration of C―H surface defects decreases with increasing thickness. ► π*C=C behavior suggestive of rise and fall of sp2 bonding configuration. ► Critical thickness required for stability of sp3 distorted sp2 structures.

  4. Crystallization behavior of amorphous indium-gallium-zinc-oxide films and its effects on thin-film transistor performance

    Science.gov (United States)

    Suko, Ayaka; Jia, JunJun; Nakamura, Shin-ichi; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki; Shigesato, Yuzo

    2016-03-01

    Amorphous indium-gallium-zinc oxide (a-IGZO) films were deposited by DC magnetron sputtering and post-annealed in air at 300-1000 °C for 1 h to investigate the crystallization behavior in detail. X-ray diffraction, electron beam diffraction, and high-resolution electron microscopy revealed that the IGZO films showed an amorphous structure after post-annealing at 300 °C. At 600 °C, the films started to crystallize from the surface with c-axis preferred orientation. At 700-1000 °C, the films totally crystallized into polycrystalline structures, wherein the grains showed c-axis preferred orientation close to the surface and random orientation inside the films. The current-gate voltage (Id-Vg) characteristics of the IGZO thin-film transistor (TFT) showed that the threshold voltage (Vth) and subthreshold swing decreased markedly after the post-annealing at 300 °C. The TFT using the totally crystallized films also showed the decrease in Vth, whereas the field-effect mobility decreased considerably.

  5. Characterization of amorphous organic thin films, determination of precise model for spectroscopic ellipsometry measurements

    Energy Technology Data Exchange (ETDEWEB)

    Farahzadi, Azadeh, E-mail: farahzadi@physics.rwth-aachen.de [Institute of Physics (IA), RWTH Aachen University of Technology, 52056 Aachen (Germany); Beigmohamadi, Maryam; Niyamakom, Phenwisa; Kremers, Stephan [Institute of Physics (IA), RWTH Aachen University of Technology, 52056 Aachen (Germany); Meyer, Nico; Heuken, Michael [AIXTRON AG, Kackertstr. 15-17, 52072 Aachen (Germany); Wuttig, Matthias [Institute of Physics (IA), RWTH Aachen University of Technology, 52056 Aachen (Germany)

    2010-09-01

    The optical properties of tris(8-hydroxyquinoline) aluminum (Alq{sub 3}), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1-1'biphenyl-4,4''diamine ({alpha}-NPD) and other amorphous organic materials for OLEDs application, e.g. 4,4-bis(2,2-diphenyl vinyl)-1,1-biphenyl (DPVBI) and Spiro-DPVBI have been studied by multi-angle spectroscopic ellipsometry (SE). The thin films of these materials have been deposited by organic vapor phase deposition (OVPD). The structural characterization has been performed using atomic force microscopy (AFM) and X-ray reflectometry (XRR). Comparison of the measurements using these different independent techniques enables the precise determination of the optical model for dielectric function of these thin films. The detail analyses on Alq{sub 3} and {alpha}-NPD show that the Kim model with Gaussian broadening provides a significantly better fit to the ellipsometry data than the frequently used harmonic oscillator model. This conclusion is further proved by performing similar measurements on other amorphous organic samples for OLEDs application, e.g. DPVBI and Spiro-DPVBI. This result can be explained by the characteristic features of electronic states in organic molecules.

  6. Characterization of amorphous organic thin films, determination of precise model for spectroscopic ellipsometry measurements

    International Nuclear Information System (INIS)

    The optical properties of tris(8-hydroxyquinoline) aluminum (Alq3), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1-1'biphenyl-4,4''diamine (α-NPD) and other amorphous organic materials for OLEDs application, e.g. 4,4-bis(2,2-diphenyl vinyl)-1,1-biphenyl (DPVBI) and Spiro-DPVBI have been studied by multi-angle spectroscopic ellipsometry (SE). The thin films of these materials have been deposited by organic vapor phase deposition (OVPD). The structural characterization has been performed using atomic force microscopy (AFM) and X-ray reflectometry (XRR). Comparison of the measurements using these different independent techniques enables the precise determination of the optical model for dielectric function of these thin films. The detail analyses on Alq3 and α-NPD show that the Kim model with Gaussian broadening provides a significantly better fit to the ellipsometry data than the frequently used harmonic oscillator model. This conclusion is further proved by performing similar measurements on other amorphous organic samples for OLEDs application, e.g. DPVBI and Spiro-DPVBI. This result can be explained by the characteristic features of electronic states in organic molecules.

  7. Nanocomposite metal amorphous-carbon thin films deposited by hybrid PVD and PECVD technique.

    Science.gov (United States)

    Teixeira, V; Soares, P; Martins, A J; Carneiro, J; Cerqueira, F

    2009-07-01

    Carbon based films can combine the properties of solid lubricating graphite structure and hard diamond crystal structure, i.e., high hardness, chemical inertness, high thermal conductivity and optical transparency without the crystalline structure of diamond. Issues of fundamental importance associated with nanocarbon coatings are reducing stress, improving adhesion and compatibility with substrates. In this work new nanocomposite coatings with improved toughness based in nanocrystalline phases of metals and ceramics embedded in amorphous carbon matrix are being developed within the frame of a research project: nc-MeNxCy/a-C(Me) with Me = Mo, Si, Al, Ti, etc. Carbide forming metal/carbon (Me/C) composite films with Me = Mo, W or Ti possess appropriate properties to overcome the limitation of pure DLC films. These novel coating architectures will be adopted with the objective to decrease residual stress, improve adherence and fracture toughness, obtain low friction coefficient and high wear-resistance. Nanocomposite DLC's films were deposited by hybrid technique using a PVD-Physically Vapor Deposition (magnetron sputtering) and Plasma Enhanced Chemical Vapor Deposition (PECVD), by the use of CH4 gas. The parameters varied were: deposition time, substrate temperature (180 degrees C) and dopant (Si + Mo) of the amorphous carbon matrix. All the depositions were made on silicon wafers and steel substrates precoated with a silicon inter-layer. The characterisation of the film's physico-mechanical properties will be presented in order to understand the influence of the deposition parameters and metal content used within the a-C matrix in the thin film properties. Film microstructure and film hybridization state was characterized by Raman Spectroscopy. In order to characterize morphology SEM and AFM will be used. Film composition was measured by Energy-Dispersive X-ray analysis (EDS) and by X-ray photoelectron spectroscopy (XPS). The contact angle for the produced DLC's on

  8. Crystallization of amorphous silicon thin films using nanoenergetic intermolecular materials with buffer layers

    Science.gov (United States)

    Lee, Choong Hee; Jeong, Tae Hoon; Kim, Do Kyung; Jeong, Woong Hee; Kang, Myung-Koo; Hwang, Tae Hyung; Kim, Hyun Jae

    2009-02-01

    Optimization of the crystallization of amorphous silicon (a-Si) using a mixture of nanoenergetic materials of iron oxide/aluminum (Fe 2O 3/Al) was studied. To achieve high-quality polycrystalline Si (poly-Si) thin films, silicon oxide (SiO 2) and silver (Ag) layer were deposited on the a-Si as buffer layers to prevent the metal diffusion in a-Si during thermite reaction and to transport the thermal energy released from nanoenergetic materials, respectively. Raman measurement was used to define the crystallinity of poly-Si. For molar ratio of Al and Fe of 2 with 100-nm-thick-SiO 2, Raman measurement showed the 519.59 cm -1 of peak position and the 5.08 cm -1 of full width at half maximum with 353 MPa of low tensile stress indicating high quality poly-Si thin film. These results showed that optimized thermite reaction could be used successfully in crystallization of a-Si to high -quality poly-Si thin films.

  9. [The Influence of Deposition Pressure on the Properties of Hydrogenated Amorphous Silicon Thin Films].

    Science.gov (United States)

    Yuan, Jun-bao; Yang, Wen; Chen, Xiao-bo; Yang, Pei-zhi; Song, Zhao-ning

    2016-02-01

    Hydrogenated amorphous silicon (a-Si:H) thin films on soda-lime glass substrates were deposited by plasma enhanced chemical vapor deposition (PECVD) using disilane and hydrogen as source gases. To study the influence of deposition pressure on the deposition rate, optical band gap and structure factor, a surface profilometer, an ultraviolet-visible spectrometer, a Fourier transform infrared (FTIR) spectrometer and a scanning electron microscopy (SEM) were used to characterize the deposited thin films. It is found that the deposition rate firstly increased and then decreased and the optical band gap monotonically decreased with the increasing deposition pressure. Moreover, the formation of SiH bond was preferable to the formation of SH₂ or SiH₃ bond when the deposition pressure was less than 210 Pa, while it was opposite when the deposition pressure is higher than 210 Pa. Finally, the deposition pressure in the range of 110~210 Pa was found to be more suitable for the preparation of high quality a-Si:H thin films. PMID:27209724

  10. Anisotropic imprint of amorphization and phase separation in manganite thin films via laser interference irradiation

    KAUST Repository

    Ding, Junfeng

    2014-09-16

    Materials with mesoscopic structural and electronic phase separation, either inherent from synthesis or created via external means, are known to exhibit functionalities absent in the homogeneous counterparts. One of the most notable examples is the colossal magnetoresistance discovered in mixed-valence manganites, where the coexistence of nano-to micrometer-sized phase-separated domains dictates the magnetotransport. However, it remains challenging to pattern and process such materials into predesigned structures and devices. In this work, a direct laser interference irradiation (LII) method is employed to produce periodic stripes in thin films of a prototypical phase-separated manganite Pr0.65(Ca0.75Sr0.25)0.35MnO3 (PCSMO). LII induces selective structural amorphization within the crystalline PCSMO matrix, forming arrays with dimensions commensurate with the laser wavelength. Furthermore, because the length scale of LII modification is compatible to that of phase separation in PCSMO, three orders of magnitude of increase in magnetoresistance and significant in-plane transport anisotropy are observed in treated PCSMO thin films. Our results show that LII is a rapid, cost-effective and contamination-free technique to tailor and improve the physical properties of manganite thin films, and it is promising to be generalized to other functional materials.

  11. The structure and physical properties of amorphous (GeS)1-x Bix thin films

    International Nuclear Information System (INIS)

    The influence of a small addition of Bi on the structure, electrophysical properties, and optical ones of germanium mono sulphide thin films is investigated. Using electro graphic studies, it is shown that (GeS)1-x Bix (0 ≤ x ≤ 0.15) films are amorphous and their structure can be described in the frame of the model, which is usually used for solid GeS-Bi2S3 solutions. Electro resistivity increases when Bi-atoms are added. At the same time, the optical gap width E0 decreases and the reciprocal slope of the exponential region of the absorption edge d(hν)/dInα increases

  12. Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

    Institute of Scientific and Technical Information of China (English)

    DING Wen-ge; YU Wei; ZHANG Jiang-yong; HAN Li; FU Guang-sheng

    2006-01-01

    The hydrogenated amorphous silicon nitride (SiNx) thin films embedded with nano-structural silicon were prepared and the microstructures at the interface of silicon nano-grains/SiNx were identified by the optical absorption and Raman scattering measurements. Characterized by the exponential tail of optical absorption and the band-width of the Raman scattering TO mode, the disorder in the interface region increases with the gas flow ratio increasing. Besides, as reflected by the sub-gap absorption coefficients, the density of interface defect states decreases, which can be attributed to the structural mismatch in the interface region and also the changes of hydrogen content in the deposited films. Additional annealing treatment results in a significant increase of defects and degree of disorder, for which the hydrogen out-diffusion in the annealing process would be responsible.

  13. Influence of the additive Ag for crystallization of amorphous Ge-Sb-Te thin films

    Energy Technology Data Exchange (ETDEWEB)

    Song, Ki-Ho; Kim, Sung-Won; Seo, Jae-Hee [Faculty of Applied Chemical Engineering, Chonnam National University, 300 Yongbong-dong, Kwangju 500-757 (Korea, Republic of); Lee, Hyun-Yong, E-mail: hyleee@chonnam.ac.k [Faculty of Applied Chemical Engineering, Chonnam National University, 300 Yongbong-dong, Kwangju 500-757 (Korea, Republic of)

    2009-05-29

    We have investigated the optical and amorphous-to-crystalline transition properties in four-types of chalcogenide thin films; Ge{sub 2}Sb{sub 2}Te{sub 5}, Ge{sub 8}Sb{sub 2}Te{sub 11}, Ag-Ge{sub 2}Sb{sub 2}Te{sub 5} and Ag-Ge{sub 8}Sb{sub 2}Te{sub 11}. Crystallization was caused by nano-pulse illumination ({lambda} = 658 nm) with power (P) of 1-17 mW and pulse duration (t) of 10-460 ns, and the morphologies of crystallized spots were observed by SEM and microscope. It was found that the crystallized spot nearby linearly increases in size with increasing the illuminating energy (E = P {center_dot} t) and eventually ablated out by over illumination. Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-vis-IR spectrophotometer. In addition, a speed of amorphous-to-crystalline transition was evaluated by detecting the reflection response signals for the nano-pulse scanning. Conclusively, the Ge{sub 8}Sb{sub 2}Te{sub 11} film has a faster crystallization speed than the Ge{sub 2}Sb{sub 2}Te{sub 5} film despite its higher crystallization temperature. The crystallization speed was largely improved by adding Ag in Ge{sub 2}Sb{sub 2}Te{sub 5} film but not in Ge{sub 8}Sb{sub 2}Te{sub 11} film. To explain these results, we considered a heat confinement by electron hopping.

  14. {sup 57}Fe Moessbauer studies of Fe-Si based amorphous ferromagnetic ribbons and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Aghamohammadzadeh, H

    1998-04-01

    {sup 57}Fe Moessbauer Spectroscopy has been used to study the mean magnetic moment direction and the distribution of moment directions in ribbon and thin film of amorphous ferromagnets known as Metglass and Finemet. We have studied them in As Received (AR) and Stress Relieved (SR) or Heat Treated (HT) states. These samples are excellent 'soft magnetic materials' with low coercivity of 8 A/m and 0.5 A/m respectively. Annealing has different effects on these samples. Although following annealing coercivity decreases for both Metglass and Finemet samples, in the Finemet it creates a second phase of DO{sub 3} structure which is a nanocrystallite. Our analysis also shows that in the Heat Treated Finemet ribbon 34 % (vol.) of the sample is amorphous and 64 % (vol.) nanocrystalline. In the HT Finemet there are seven different iron sites of which 6 sites belong to the crystalline phase and one site to the amorphous phase. We have studied the distribution of the hyperfine fields, which cause broadening of the spectral lines in the amorphous state. Each iron site has a different environment which is in turn the reason for the field distribution.Our results show that following annealing the mean magnetic field decreases from about 211 kOe in the AR Finemet to 165 kOe in the amorphous phase of the heat treated Finemet which means in this phase there is a depletion in the iron atoms. The spectra were recorded for a range of inclinations between the {gamma}-rays and the normal to the sample plane. Different phenomenological models have been used to investigate the moment direction distribution (anisotropy) in our sample. The results show that in both Metglass and Finemet samples annealing decreases the in-plane anisotropy substantially but not the out-of-plane anisotropy. We also show that the properties of Metglass thin film are quite different from its ribbon sample. Low temperature studies of the Metglass Ribbon sample allow us to investigate the temperature

  15. 57Fe Moessbauer studies of Fe-Si based amorphous ferromagnetic ribbons and thin films

    International Nuclear Information System (INIS)

    57Fe Moessbauer Spectroscopy has been used to study the mean magnetic moment direction and the distribution of moment directions in ribbon and thin film of amorphous ferromagnets known as Metglass and Finemet. We have studied them in As Received (AR) and Stress Relieved (SR) or Heat Treated (HT) states. These samples are excellent 'soft magnetic materials' with low coercivity of 8 A/m and 0.5 A/m respectively. Annealing has different effects on these samples. Although following annealing coercivity decreases for both Metglass and Finemet samples, in the Finemet it creates a second phase of DO3 structure which is a nanocrystallite. Our analysis also shows that in the Heat Treated Finemet ribbon 34 % (vol.) of the sample is amorphous and 64 % (vol.) nanocrystalline. In the HT Finemet there are seven different iron sites of which 6 sites belong to the crystalline phase and one site to the amorphous phase. We have studied the distribution of the hyperfine fields, which cause broadening of the spectral lines in the amorphous state. Each iron site has a different environment which is in turn the reason for the field distribution. Our results show that following annealing the mean magnetic field decreases from about 211 kOe in the AR Finemet to 165 kOe in the amorphous phase of the heat treated Finemet which means in this phase there is a depletion in the iron atoms. The spectra were recorded for a range of inclinations between the γ-rays and the normal to the sample plane. Different phenomenological models have been used to investigate the moment direction distribution (anisotropy) in our sample. The results show that in both Metglass and Finemet samples annealing decreases the in-plane anisotropy substantially but not the out-of-plane anisotropy. We also show that the properties of Metglass thin film are quite different from its ribbon sample. Low temperature studies of the Metglass Ribbon sample allow us to investigate the temperature dependence of the moment

  16. Plasma deposition of amorphous silicon carbide thin films irradiated with neutrons

    Science.gov (United States)

    Huran, J.; Bohacek, P.; Kucera, M.; Kleinova, A.; Sasinkova, V.; IEE SAS, Bratislava, Slovakia Team; Polymer Institute, SAS, Bratislava, Slovakia Team; Institute of Chemistry, SAS, Bratislava, Slovakia Team

    2015-09-01

    Amorphous silicon carbide and N-doped silicon carbide thin films were deposited on P-type Si(100) wafer by plasma enhanced chemical vapor deposition (PECVD) technology using silane, methane, ammonium and argon gases. The concentration of elements in the films was determined by RBS and ERDA method. Chemical compositions were analyzed by FTIR spectroscopy. Photoluminescence properties were studied by photoluminescence spectroscopy (PL). Irradiation of samples with various neutron fluencies was performed at room temperature. The films contain silicon, carbon, hydrogen, nitrogen and small amount of oxygen. From the IR spectra, the films contained Si-C, Si-H, C-H, Si-N, N-H and Si-O bonds. No significance effect on the IR spectra after neutron irradiation was observed. PL spectroscopy results of films showed decreasing PL intensity after neutron irradiation and PL intensity decreased with increased neutron fluencies. The measured current of the prepared structures increased after irradiation with neutrons and rise up with neutron fluencies.

  17. Inprovement of Field Emission Properties of PBS Thin Films by Amorphous Carbon Coating

    Directory of Open Access Journals (Sweden)

    S. Jana

    2011-01-01

    Full Text Available Lead sulfide (PbS nanocrystalline thin films were synthesized at room temperature via chemical bath deposition on both silicon and glass substrates and coated with amorphous carbon of different thickness by varying deposition time in plasma enhanced chemical vapor deposition technique. The as prepared samples were characterized by X-ray diffraction (XRD, field emission scanning electron microscope (FESEM and atomic force microscope (AFM. XRD study reveals that coating of amorphous carbon does not change the crystal structure of PbS. From FESEM images it is seen that the average size of PbS nanoparticle does not exceed 100 nm, though sometomes small cubic particles agglomerated to form bigger particles. The coating of amorphous carbon can be clearly visible by the FESEM as well as from AFM micrographs. Field emission study show a significant betterment for the carbon coated sample as compared to the pure PbS. The effect of inter-electrode distance on the field emission characteristics of best field emitting sample has been studied for three different inter-electrode distances.

  18. Formation of ultra-thin amorphous conversion films on zinc alloy coatings

    International Nuclear Information System (INIS)

    Within the two parts of this contribution a detailed investigation of the nucleation and growth of ultra-thin amorphous conversion coatings on hot dip galvanised steel is reported. The first part deals with the composition and reactivity of the native ultra-thin oxyhydroxide films that are formed on the zinc alloy surface during the hot dip galvanising process due to the enrichment of aluminium at the outer surface of the alloy coating. Complimentary surface analytical techniques such as FT-IR-spectroscopy at grazing incidence and X-ray photo electron spectroscopy, high resolution AFM on selected grains to study the surface topography and cyclovoltammetry as well as quasi stationary current potential curves and Kelvin probe measurements to study surface ion and electron transfer reactions were applied. Changes in the chemical composition, the electronic properties and the morphology of the ultra-thin surface could thereby be analysed. The surface of the ZnAl alloy is composed of an about 3-4 nm thick mixed Zn and Al-oxyhydroxide layer with Zn-oxyhydroxide slightly enriched at the outermost surface. This mixed oxyhydroxide causes to a significant inhibition of electron transfer reactions. During alkaline cleaning the surface is nanoscopically roughened and the mixed oxyhydroxide is converted into an electro-conducting hydroxyl rich pure Zn-oxyhydroxide layer with a thickness of about 4 nm. In the second part of this paper the effect of the inorganic surface layer on the film formation is correlated with these findings

  19. Hydrogenated amorphous silicon sensors based on thin film on ASIC technology

    CERN Document Server

    Despeisse, M; Anelli, G; Jarron, P; Kaplon, J; Rusack, R; Saramad, S; Wyrsch, N

    2006-01-01

    The performance and limitations of a novel detector technology based on the deposition of a thin-film sensor on top of processed integrated circuits have been studied. Hydrogenated amorphous silicon (a-Si:H) films have been deposited on top of CMOS circuits developed for these studies and the resulting "thin-film on ASIC" (TFA) detectors are presented. The leakage current of the a-Si:H sensor at high reverse biases turns out to be an important parameter limiting the performance of a TFA detector. Its detailed study and the pixel segmentation of the detector are presented. High internal electric fields (in the order of 10/sup 4/-10/sup 5/ V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in a-Si:H. Signal induction by generated carrier motion and speed in the a-Si:H sensor have been studied with a 660 nm pulsed laser on a TFA detector based on an ASIC integrating 5 ns peaking time pre- amplifiers. The measurement set-up also permits to study the depletion of the senso...

  20. Observation of amorphous to crystalline phase transformation in Te substituted Sn-Sb-Se thin films

    International Nuclear Information System (INIS)

    Thin films of Sn-Sb-Se-Te (8 ≤ x ≤ 14) chalcogenide system were prepared by thermal evaporation technique using melt quenched bulk samples. The as-prepared thin films were found amorphous as evidenced from X-ray diffraction studies. Resistivity measurement showed an exponential decrease with temperature upto critical temperature (transition temperature) beyond which a sharp decrease was observed and with further increase in temperature showed an exponential decrease in resistivity with different activation energy. The transition temperature showed a decreasing trend with tellurium content in the sample. The resistivity measurement during cooling run showed no abrupt change in resistivity. The resistivity measurements of annealed films did not show any abrupt change revealing the structural transformation occurring in the material. The transition width showed an increase with tellurium content in the sample. The resistivity ratio showed two order of magnitude improvements for sample with higher tellurium content. The observed transition temperature in this system was found quite less than already commercialized Ge-Sb-Te system for optical and electronic memories

  1. On the amorphous and nanocrystalline Zr-Cu and Zr-Ti co-sputtered thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, C.J. [Institute of Materials Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Huang, J.C., E-mail: jacobc@mail.nsysu.edu.t [Institute of Materials Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Chou, H.S.; Lai, Y.H.; Chang, L.W. [Institute of Materials Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Du, X.H. [Institute of Materials Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Department of Materials Engineering, Shenyang Institute of Aeronautical Engineering, Shenyang 110034 (China); Chu, J.P. [Department of Polymer Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Nieh, T.G. [Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996-2200 (United States)

    2009-08-26

    In the current study, we examined and compared the mixing and vitrification behavior of the Zr-Cu and Zr-Ti binary systems in the form of co-sputtered thin films with or without post-annealing. The co-sputtered Zr-Cu films are all amorphous under various co-sputtering conditions, suggesting the high vitrification tendency. The amorphous Zr-Cu thin film will start to crystallize into nano-crystalline Zr{sub 2}Cu and Zr{sub 7}Cu{sub 10} phases upon long exposure at temperatures above 350 deg. C. On the other hand, it is difficult to form amorphous film with the Zr-Ti system, except at a low sputtering power of 30-50 W. The low powers enable the co-sputtered Zr-Ti thin film to exhibit the diffuse hump in the X-ray diffraction. Examination by high resolution transmission electron microscopy reveals numerous fine nano-crystalline phases around 2 nm in the amorphous matrix. Upon exposure at 700 deg. C, the Zr-Ti films transform into crystalline hexagonal close-packed alpha and body-centered cubic beta phases.

  2. A study of the chemical, mechanical, and surface properties of thin films of hydrogenated amorphous carbon

    Energy Technology Data Exchange (ETDEWEB)

    Vandentop, G.J.

    1990-07-01

    Amorphous hydrogenated carbon (a-C:H) films were studied with the objective of elucidating the nucleation and growth mechanisms, and the origin of their unique physical properties. The films were deposited onto Si(100) substrates both on the powered (negatively self-biased) and on the grounded electrodes from methane in an rf plasma (13.56 MHz) at 65 mTorr and 300 to 370 K. The films produced at the powered electrode exhibited superior mechanical properties, such as high hardness. A mass spectrometer was used to identify neutral species and positive ions incident on the electrodes from the plasma, and also to measure ion energies. The effect of varying ion energy flux on the properties of a-C:H films was investigated using a novel pulsed biasing technique. It was demonstrated that ions were not the dominant deposition species as the total ion flux measured was insufficient to account for the observed deposition rate. The interface between thin films of a-C:H and silicon substrates was investigated using angle resolved x-ray photoelectron spectroscopy. A silicon carbide layer was detected at the interface of a hard a-C:H film formed at the powered electrode. At the grounded electrode, where the kinetic energy is low, no interfacial carbide layer was observed. Scanning tunneling microscopy and high energy electron energy loss spectroscopy was used to investigate the initial stages of growth of a-C:H films. On graphite substrates, films formed at the powered electrode were observed to nucleate in clusters approximately 50 {Angstrom} in diameter, while at the grounded electrode no cluster formation was observed. 58 figs.

  3. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

    Energy Technology Data Exchange (ETDEWEB)

    Park, Joon Seok; Maeng, Wan-Joo; Kim, Hyun-Suk [Display Device Laboratory, Samsung Advanced Institute of Technology (SAIT), Mt. 14-1, Nongseo-dong, Yongin, 446-712 (Korea, Republic of); Park, Jin-Seong, E-mail: jinseongpark@dankook.ac.kr [Department of Materials Science and Engineering, Dankook University, Mt. 29, Anseo-dong, Cheonan, 330-714 (Korea, Republic of)

    2012-01-01

    The present article is a review of the recent progress and major trends in the field of thin-film transistor (TFT) research involving the use of amorphous oxide semiconductors (AOS). First, an overview is provided on how electrical performance may be enhanced by the adoption of specific device structures and process schemes, the combination of various oxide semiconductor materials, and the appropriate selection of gate dielectrics and electrode metals in contact with the semiconductor. As metal oxide TFT devices are excellent candidates for switching or driving transistors in next generation active matrix liquid crystal displays (AMLCD) or active matrix organic light emitting diode (AMOLED) displays, the major parameters of interest in the electrical characteristics involve the field effect mobility ({mu}{sub FE}), threshold voltage (V{sub th}), and subthreshold swing (SS). A study of the stability of amorphous oxide TFT devices is presented next. Switching or driving transistors in AMLCD or AMOLED displays inevitably involves voltage bias or constant current stress upon prolonged operation, and in this regard many research groups have examined and proposed device degradation mechanisms under various stress conditions. The most recent studies involve stress experiments in the presence of visible light irradiating the semiconductor, and different degradation mechanisms have been proposed with respect to photon radiation. The last part of this review consists of a description of methods other than conventional vacuum deposition techniques regarding the formation of oxide semiconductor films, along with some potential application fields including flexible displays and information storage.

  4. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    OpenAIRE

    Yu-Hsien Lin; Jay-Chi Chou

    2015-01-01

    We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using different high-k gate dielectric materials such as silicon nitride (Si3N4) and aluminum oxide (Al2O3) at low temperature process (

  5. Estimation of the impact of electrostatic discharge on density of states in hydrogenated amorphous silicon thin-film transistors

    NARCIS (Netherlands)

    Tosic Golo, Natasa; Wal, van der Siebrigje; Kuper, F.G.; Mouthaan, A.J.

    2002-01-01

    The objective of this letter is to give an estimation of the impact of an electrostatic discharge (ESD) stress on the density of states (DOS) within the energy gap of hydrogenated amorphous silicon (a-Si:H) thin-film transistors. ESD stresses were applied by means of a transmission line model tester

  6. Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors

    NARCIS (Netherlands)

    Nag, M.; Muller, R.; Steudel, S.; Smout, S.; Bhoolokam, A.; Myny, K.; Schols, S.; Genoe, J.; Cobb, B.; Kumar, A.; Gelinck, G.; Fukui, Y.; Groeseneken, G.; Heremans, P.

    2015-01-01

    We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at

  7. Enhanced light trapping with double-groove grating in thin-film amorphous silicon solar cells

    Science.gov (United States)

    Wu, Jun

    2016-05-01

    A design to enhance light absorption in thin-film amorphous silicon (a-Si) solar cells is proposed. It is achieved by patterning a double-groove grating with waveguide layer as the absorbing layer and coating a double-groove grating anti-reflective layer in the front window of the cell. The broadband absorption under normal incidence can be achieved for both TE and TM polarizations. It is shown that the averaged integrated absorptions have very large angle independence for the optimized solar cell. An qualitative understanding of such broadband enhanced absorption effect, which is attributed to the guided mode resonance, is presented. The conclusions can be exploited to guide the design of solar cells based on a grating structure.

  8. Contact resistance improvement using interfacial silver nanoparticles in amorphous indium-zinc-oxide thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Rui; He, Jian [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Song, Yang [Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Li, Wei [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Zaslavsky, A. [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Paine, D. C., E-mail: David-Paine@brown.edu [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

    2014-09-01

    We describe an approach to reduce the contact resistance at compositional conducting/semiconducting indium-zinc-oxide (IZO) homojunctions used for contacts in thin film transistors (TFTs). By introducing silver nanoparticles (Ag NPs) at the homojunction interface between the conducting IZO electrodes and the amorphous IZO channel, we reduce the specific contact resistance, obtained by transmission line model measurements, down to ∼10{sup −2 }Ω cm{sup 2}, ∼3 orders of magnitude lower than either NP-free homojunction contacts or solid Ag metal contacts. The resulting back-gated TFTs with Ag NP contacts exhibit good field effect mobility of ∼27 cm{sup 2}/V s and an on/off ratio >10{sup 7}. We attribute the improved contact resistance to electric field concentration by the Ag NPs.

  9. Plasma optical emission spectroscopy diagnostic during amorphous silicon thin films deposition by Rf sputtering technique

    International Nuclear Information System (INIS)

    This paper deals with the study of the glow discharge, used for amorphous silicon thin films deposition by Rf sputtering technique. The produced plasma is investigated by mean of the optical emission spectroscopy (OES) analysis. Different plasmas obtained with changing the gas pressure and Rf powers were analysed at different positions in the inter-electrode space. Emission lines from Ar, Si, Si+ and Ar+ were observed in the visible region. It was found that emission intensities of all the observed lines have a spatial Gaussian shape. The maximum intensity is located in the core of the plasma and decrease in the electrodes region. The ratio between the Si and Ar+ intensities (ISi/IAr+), in the target region, is proposed as a new tool to estimate the Ar sputtering yield. This ratio was compared to the theoretical calculated sputtering yield. The difference between these two quantities is exploited to determine the contribution of fast Ar neutrals in the sputtering process.

  10. X-ray magnetic absorption in Fe-Tb amorphous thin films

    CERN Document Server

    Kim, Chan Wook; Watanabe, Yasuhiro

    1999-01-01

    In order to investigate the magnetic structure of Fe-Tb amorphous thin films, we have performed magnetic circular dichroism (MCD) measurements by using the circularly polarized X-ray at the Fe K- and the Tb L2,3-edges in Fe sub 8 sub 8 Tb sub 1 sub 2 , Fe sub 8 sub 0 Tb sub 2 sub 0 , and Fe sub 6 sub 2 Tb sub 3 sub 8. In all samples, the spin-dependent absorption effects, DELTA mu t, were observed. Also, elementary information was obtained on the spin polarizations of the p- and the d-projected electrons lying in the unoccupied states near the Fermi levels in the samples.

  11. Performance enhancement of amorphous indium-zinc-oxide thin film transistors by microwave annealing

    Science.gov (United States)

    Xu, Rui; He, Jian; Li, Wei; Paine, David C.

    2015-12-01

    The effect of microwave annealing on the field effect mobility and threshold voltage of amorphous indium zinc oxide (a-IZO) thin film transistors (TFTs) is reported. A control device with traditional hotplate annealing at 200 °C for 1 h was applied for comparison. The results show that both microwave annealing and low-temperature hotplate annealing increase the field effect mobility from 12.3 cm2/V s in as-deposited state to ∼19 cm2/V s in annealed state. However, the negative shift in threshold voltage with microwave annealing (from 0.23 V to -2.86 V) is smaller than that with low-temperature hotplate annealing (to -9 V). A mechanism related with the electrical properties of a-IZO material is proposed. This rapid low-temperature annealing technology makes a-IZO TFTs promising for use in flexible, transparent electronics.

  12. Conduction mechanism in amorphous InGaZnO thin film transistors

    Science.gov (United States)

    Bhoolokam, Ajay; Nag, Manoj; Steudel, Soeren; Genoe, Jan; Gelinck, Gerwin; Kadashchuk, Andrey; Groeseneken, Guido; Heremans, Paul

    2016-01-01

    We validate a model which is a combination of multiple trapping and release and percolation model for describing the conduction mechanism in amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT). We show that using just multiple trapping and release or percolation model is insufficient to explain TFT behavior as a function of temperature. We also show the intrinsic mobility is dependent on temperature due to scattering by ionic impurities or lattice. In solving the Poisson equation to find the surface potential and back potential as a function of gate voltage, we explicitly allow for the back surface to be floating, as is the case for a-IGZO transistors. The parameters for gap states, percolation barriers and intrinsic mobility at room temperature that we extract with this comprehensive model are in good agreement with those extracted in literature with partially-complete models.

  13. Charge transport and activation energy of amorphous silicon carbide thin film on quartz at elevated temperature

    Science.gov (United States)

    Dinh, Toan; Viet Dao, Dzung; Phan, Hoang-Phuong; Wang, Li; Qamar, Afzaal; Nguyen, Nam-Trung; Tanner, Philip; Rybachuk, Maksym

    2015-06-01

    We report on the temperature dependence of the charge transport and activation energy of amorphous silicon carbide (a-SiC) thin films grown on quartz by low-pressure chemical vapor deposition. The electrical conductivity as characterized by the Arrhenius rule was found to vary distinctly under two activation energy thresholds of 150 and 205 meV, corresponding to temperature ranges of 300 to 450 K and 450 to 580 K, respectively. The a-SiC/quartz system displayed a high temperature coefficient of resistance ranging from -4,000 to -16,000 ppm/K, demonstrating a strong feasibility of using this material for highly sensitive thermal sensing applications.

  14. Stoichiometric analysis of compositionally graded combinatorial amorphous thin film oxides using laser-induced breakdown spectroscopy

    International Nuclear Information System (INIS)

    Laser-induced breakdown spectroscopy (LIBS) is a recently developed locally destructive elemental analysis technique that can be used to analyze solid, liquid, and gaseous samples. In the system explored here, a neodymium-doped yttrium aluminum garnet laser ablates a small amount of the sample and spectral emission from the plume is analyzed using a set of synchronized spectrometers. We explore the use of LIBS to map the stoichiometry of compositionally graded amorphous indium zinc oxide thin-film libraries. After optimization of the experimental parameters (distance between lens and samples, spot size on the samples, etc.), the LIBS system was calibrated against inductively coupled plasma atomic emission spectroscopy which resulted in a very consistent LIBS-based elemental analysis. Various parameters that need to be watched closely in order to produce consistent results are discussed. We also compare LIBS and x-ray fluorescence as techniques for the compositional mapping of libraries.

  15. PIXE from thin films and amorphous alloys induced by medium energy heavy ions

    International Nuclear Information System (INIS)

    Highlights: •Low energy heavy-ion PIXE were used for surface characterization. •It was performed in time sequence and at grazing incidence-exit geometry. •Stability of thin films against implantation and interface mixing was analyzed. •Sputtering of multicomponent alloys subjected to irradiation was monitored. -- Abstract: Characteristic X-rays emitted under impact of fast light ions with surfaces (PIXE) provide information not only on atomic excitation and further recombination processes but also on elemental composition and dynamics of restructuration of the surface. In this work radiation emitted during interaction of medium energy (∼200 keV) heavy ions (Ar, N) with Si (1 1 0) surface and with Fe/Si and Fe/Cu/Si thin (1–50 nm) films in grazing incidence-exit angle geometry were measured in time sequence in order to show that dynamics of selective modification of surface structure and composition can be monitored in-situ with PIXE. It is shown that surfaces of amorphous alloys are not stable against heavy ions (HI) irradiation due to preferential sputtering and implantation and that the dynamics of such modification can also be monitored with PIXE. The method is used for example to find detection limit for implanted Ar ions

  16. Breakthrough curves of oil adsorption on novel amorphous carbon thin film.

    Science.gov (United States)

    El-Sayed, M; Ramzi, M; Hosny, R; Fathy, M; Abdel Moghny, Th

    2016-01-01

    A novel amorphous carbon thin film (ACTF) was prepared by hydrolyzing wood sawdust and delignificating the residue to obtain cellulose mass that was subjected to react with cobalt silicate nanoparticle as a catalyst under the influence of sudden concentrated sulfuric acid addition at 23 °C. The novel ACTF was obtained in the form of thin films like graphene sheets having winding surface. The prepared ACTF was characterized by Fourier-transform infrared spectrometer, transmission electron microscope (TEM), and Brunauer-Emmett-Teller (BET). The adsorption capacity of ACTF to remove oil from synthetic produced water was evaluated using the incorporation of Thomas and Yoon-Nelson models. The performance study is described through the breakthrough curves concept under relevant operating conditions such as column bed heights (3.8, 5 and 11 mm) and flow rate (0.5, 1 and 1.5 mL.min(-1)). It was found that the oil uptake mechanism is favoring higher bed height. Also, the highest bed capacity of 700 mg oil/g ACTF was achieved at 5 mm bed height, and 0.5 mL.min(-1) flow rate. The results of breakthrough curve for oil adsorption was best described using the Yoon-Nelson model. Finally, the results illustrate that ACTF could be utilized effectively for oil removal from synthetic produced water in a fixed-bed column system. PMID:27191556

  17. Stabilization of amorphous structure in silicon thin film by adding germanium

    International Nuclear Information System (INIS)

    The stabilization of the amorphous structure in amorphous silicon film by adding Ge atoms was studied using Raman spectroscopy. Amorphous Si1−xGex (x = 0.0, 0.03, 0.14, and 0.27) films were deposited on glass substrates from electron beam evaporation sources and annealed in N2 atmosphere. The change in the amorphous states and the phase transition from amorphous to crystalline were characterized using the TO, LO, and LA phonons in the Raman spectra. The temperature of the transition from the amorphous phase to the crystalline phase was higher for the a-Si1−xGex (x = 0.03, 0.14) films, and the crystallization was hindered. The reason why the addition of a suitable quantity of Ge atoms into the three-dimensional amorphous silicon network stabilizes its amorphous structure is discussed based on the changes in the Raman signals of the TO, LO, and LA phonons during annealing. The characteristic bond length of the Ge atoms allows them to stabilize the random network of the amorphous Si composed of quasi-tetrahedral Si units, and obstruct its rearrangement

  18. Optical and structural properties in the amorphous to polycrystalline transition in Sb2S3 thin films

    Science.gov (United States)

    Perales, F.; Lifante, G.; Agulló-Rueda, F.; de las Heras, C.

    2007-04-01

    Sb2S3 thin films have been obtained by physical vapour deposition on LiNbO3 and glass substrates. Films with amorphous structure originally became polycrystalline by annealing in a sulfur atmosphere. Changes in optical and structural properties have been studied as a function of annealing temperature. A drastic variation in optical transmission, energy gaps, refractive index, crystallite size, etc is observed at a temperature near 200 °C.

  19. Applications of microcrystalline hydrogenated cubic silicon carbide for amorphous silicon thin film solar cells

    International Nuclear Information System (INIS)

    We demonstrated the fabrication of n-i-p type amorphous silicon (a-Si:H) thin film solar cells using phosphorus doped microcrystalline cubic silicon carbide (μc-3C-SiC:H) films as a window layer. The Hot-wire CVD method and a covering technique of titanium dioxide TiO2 on TCO was utilized for the cell fabrication. The cell configuration is TCO/TiO2/n-type μc-3C-SiC:H/intrinsic a-Si:H/p-type μc- SiCx (a-SiCx:H including μc-Si:H phase)/Al. Approximately 4.5% efficiency with a Voc of 0.953 V was obtained for AM-1.5 light irradiation. We also prepared a cell with the undoped a-Si1-xCx:H film as a buffer layer to improve the n/i interface. A maximum Voc of 0.966 V was obtained

  20. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio, R., E-mail: rambrosi@uacj.mx [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Moreno, M.; Torres, A. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Carrillo, A. [Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Vivaldo, I.; Cosme, I. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Heredia, A. [Universidad Popular Autónoma del Estado de Puebla, Puebla (Mexico)

    2015-09-15

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σ{sub dark} changed by 5 order of magnitude under illumination, V{sub d} was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH{sub 4}, H{sub 2}, Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σ{sub RT}), activation energy (E{sub a}), and optical band gap (E{sub g}). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications.

  1. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    International Nuclear Information System (INIS)

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σdark changed by 5 order of magnitude under illumination, Vd was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH4, H2, Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σRT), activation energy (Ea), and optical band gap (Eg). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications

  2. Growth of amorphous selenium thin films: classical versus quantum mechanical molecular dynamics simulation

    International Nuclear Information System (INIS)

    We present the first molecular dynamics simulation of the vacuum deposition of amorphous selenium films. We compare the classical, tight-binding and Hubbard-term corrected tight-binding molecular dynamics simulation methods. Densities, coordination defects, radial distribution functions, bond angles, dihedral angles, intrachain and interchain atomic correlations were investigated in the obtained amorphous films. Local atomic arrangements were compared to results of diffraction measurements

  3. Analysis on multiple ring-like cracks in thin amorphous carbon film on soft substrate under nanoindentation

    International Nuclear Information System (INIS)

    In the present work, the fracture toughness of thin amorphous carbon films was quantitatively characterized by nanoindentation using a conical indenter. The amorphous carbon films with different thickness, i.e. 140 and 400 nm, were obtained by plasma vapour deposition on a poly-ether-ether-ketone substrate. During indentation, it was noticed that multiple ring-like, through-thickness cracks occurred in the films. Correspondingly, ‘sliding pop-ins’ were observed in the load–depth curves. Using an energy method, the fracture toughness of the films could be therefore determined. The results showed that the fracture toughness of the amorphous carbon films was in the range of 0.99–2.87 MPa m0.5, which agreed well with the published data. Further, finite element analysis was also performed to evaluate the stress distribution in a thin film/soft substrate system, which showed that the ring-like cracks were caused by the tensile radial stress on the film surface. (paper)

  4. Dark conductivity and photoconductivity of amorphous Hg0.78Cd0.22Te thin films

    Institute of Scientific and Technical Information of China (English)

    Qiu Feng; Ji Rongbin; Xiang Jinzhong; Kong Jincheng; Yu Lianjie; Kong Lingde; Wang Guanghua; Li Xiongjun; Yang Lili; Li Cong

    2011-01-01

    This paper reports the dark conductivity and photoconductivity of amorphous Hg0.78Cd0.22 Te thin films deposited on an Al2O3 substrate by RF magnetron sputtering.It is determined that dark conduction activation energy is 0.417 eV for the as-grown sample.Thermal quenching is absent for the as-grown sample during the testing temperature zone,but the reverse is true for the polycrystalline sample.Photosensitivity shows the maximum at 240 K for amorphous thin films,while it is higher for the as-grown sample than for polycrystalline thin films in the range from 170 to 300 K.The recombination mechanism is the monomolecular recombination process at room temperature,which is different from the low temperature range.Theμτ-product is low in the range of 10-11-10-9 cm2/V,which indicates that some defect states exist in the amorphous thin films.

  5. Optical Response in Amorphous GaAs Thin Films Prepared by Pulsed Laser Deposition

    Science.gov (United States)

    Kiwa, Toshihiko; Kawashima, Ichiro; Nashima, Shigeki; Hangyo, Masanori; Tonouchi, Masayoshi

    2000-11-01

    Femtosecond optical response in GaAs thin films has been studied. We prepared GaAs thin films on MgO substrates and on YBa2Cu3O7-δ (YBCO) thin films using pulsed laser deposition (PLD) at temperatures below 250^\\circC@. A photocarrier lifetime of less than 1 ps is measured for the prepared GaAs thin films using femtosecond time-domain reflectivity change measurements. Pulsed electromagnetic wave [terahertz (THz) radiaiton] containing a frequency component of up to 1 THz is emitted from fabricated photoconductive switches using the prepared thin films. We also evaluated the THz radiation properties emitted from the photoswitches on the YBCO thin films.

  6. Photopatterned surface relief gratings in azobenzene-amorphous polycarbonate thin films

    Science.gov (United States)

    Vollmann, Morten; Getek, Peter; Olear, Kellie; Combs, Cody; Campos, Benjamin; Witkowski, Edmund; Cain, Erin; McGee, David

    Photoinduced orientation of azobenzene chromophores in polymeric host materials has been broadly explored for optical processing applications. Illumination of the chromophore with polarized light rotates the trans isomer perpendicular to the polarization, resulting in spatially modulated birefringence. The photoinduced anisotropy may also drive mass transport, with surface relief patterns being observed in a wide variety of systems. Here we report photoinduced birefringence in a guest-host system of Disperse Red 1- amorphous polycarbonate (DR1-APC). Birefringence was induced with a 490 nm laser and probed at 633 nm, with typical values of Δn = 0.01 in 2 micron thick films. Illumination of DR1-APC with intensity and/or polarization gratings also resulted in sinusoidal surface relief patterns with periodicity 1- 3 micron as controlled by the interbeam crossing angle of the 490 nm writing beams; the surface modulation was +/- 20 nm as measured by atomic force microscopy. Photopatterned DR1-APC is advantageous for applications given the ease of thin-film fabrication and the high glass transition temperature of APC, resulting in robust optically-induced surface gratings. We acknowledge support from NSF-DMR Award No. 1138416.

  7. Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

    Science.gov (United States)

    Jin, Sung Hun; Kang, Seung-Kyun; Cho, In-Tak; Han, Sang Youn; Chung, Ha Uk; Lee, Dong Joon; Shin, Jongmin; Baek, Geun Woo; Kim, Tae-il; Lee, Jong-Ho; Rogers, John A

    2015-04-22

    This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants. PMID:25805699

  8. Amorphous-nanocrystalline Al doped ZnO transparent conducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Diez-Betriu, X., E-mail: xdiezbetriu@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, Cantoblanco 28049 Madrid (Spain); Jimenez-Rioboo, R.; Marcos, J. Sanchez-; Cespedes, E.; Espinosa, A.; Andres, A. de [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, Cantoblanco 28049 Madrid (Spain)

    2012-09-25

    Highlights: Black-Right-Pointing-Pointer Al- doped ZnO films by RF- sputtering as amorphous TCO. Black-Right-Pointing-Pointer Structural characterization confirms amorphous-nanocrystalline nature of samples. Black-Right-Pointing-Pointer Optical gap dependence on substrate and grain size. Black-Right-Pointing-Pointer Resistivity correlates to the optical bandgap. - Abstract: Al-doped ZnO films have been deposited at room temperature by means of RF sputtering under different conditions and subjected to annealing treatments looking for amorphous Transparent Conducting Oxide (TCO) films in the search for their integration into the emerging area of the flexible electronics. Structural studies have been performed as well as optical and electrical characterization. Spectroscopic ellipsometry has been used for the determination of the optical gap for films grown on Si and the films thickness. The amorphous fraction of the films (up to 86%) depends on the substrate and RF power but not on the annealing temperature up to 600 Degree-Sign C for glass substrates. The resistivity is found to be independent of the amorphous degree and correlates to the optical bandgap which presents three regimes depending on the annealing temperature.

  9. Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties

    International Nuclear Information System (INIS)

    Multilayered ZnO-SnO2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO2 oxides target, and their structural and field effect electronic transport properties were investigated as a function of the thickness of the ZnO and SnO2 layers. The films have an amorphous multilayered heterostructure composed of the periodic stacking of the ZnO and SnO2 layers. The field effect electronic properties of amorphous multilayered ZnO-SnO2 heterostructure thin film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO2 layers. The highest electron mobility of 37 cm2/V s, a low subthreshold swing of a 0.19 V/decade, a threshold voltage of 0.13 V, and a high drain current on-to-off ratio of ∼1010 obtained for the amorphous multilayered ZnO(1.5 nm)-SnO2(1.5 nm) heterostructure TFTs. These results are presumed to be due to the unique electronic structure of an amorphous multilayered ZnO-SnO2 heterostructure film consisting of ZnO, SnO2, and ZnO-SnO2 interface layers

  10. Preparation and electrochemical performance of copper foam-supported amorphous silicon thin films for rechargeable lithium-ion batteries

    International Nuclear Information System (INIS)

    Research highlights: → Amorphous Si thin films have been deposited on copper foam substrate by radio-frequency (rf) magnetron sputtering. → The as-prepared Si/Cu films with interconnected 3-dimensional structure are employed as anode materials of rechargeable lithium-ion batteries, showing that the electrode properties are greatly affected by the deposition temperature. → The film electrode deposited at an optimum temperature of 300 deg. C delivers a specific capacity of ∼2900 mAh/g and a coulombic efficiency above 95% at charge/discharge current density of 0.2C after 30 cycles. → The Li+ diffusion coefficiency in copper foam-supported Si thin films is determined to be 2.36 x 10-9 cm2/s. → The combination of rf magnetron sputtering and cooper foam substrate is an efficient route to prepare amorphous Si films with high capacity and cyclability due to the efficient ionic diffusion and interface contact with a good conductive current collector. - Abstract: Amorphous Si thin films, which have been deposited on copper foam by radio-frequency (rf) magnetron sputtering, are employed as anode materials of rechargeable lithium-ion batteries. The morphologies and structures of the as-prepared Si thin films are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray powder diffraction (XRD). Electrochemical performance of lithium-ion batteries with the as-prepared Si films as the anode materials is investigated by cyclic voltammetry and charge-discharge measurements. The results show that the electrode properties of the prepared amorphous Si films are greatly affected by the deposition temperature. The film electrode deposited at an optimum temperature of 300 deg. C can deliver a specific capacity of ∼2900 mAh/g and a coulombic efficiency above 95% at charge/discharge current density of 0.2C after 30 cycles. The Li+ diffusion coefficiency in copper foam-supported Si thin films is determined to be 2.36 x 10-9 cm2/s.

  11. Chemical vapour deposition of amorphous Ru(P) thin films from Ru trialkylphosphite hydride complexes.

    Science.gov (United States)

    McCarty, W Jeffrey; Yang, Xiaoping; DePue Anderson, Lauren J; Jones, Richard A

    2012-11-21

    The ruthenium phosphite hydride complexes H(2)Ru(P(OR)(3))(4) (R = Me (1), Et (2), (i)Pr (3)) were used as CVD precursors for the deposition of films of amorphous ruthenium-phosphorus alloys. The as-deposited films were X-ray amorphous and XPS analysis revealed that they were predominantly comprised of Ru and P in zero oxidation states. XPS analysis also showed the presence of small amounts of oxidized ruthenium and phosphorus. The composition of the films was found to depend on ligand chemistry as well as the deposition conditions. The use of H(2) as the carrier gas had the effect of increasing the relative concentrations of P and O for all films. Annealing films to 700 °C under vacuum produced films of polycrystalline hcp Ru while a flowing stream of H(2) resulted in polycrystalline hcp RuP. PMID:23018487

  12. Opto-electrical properties of amorphous carbon thin film deposited from natural precursor camphor

    Energy Technology Data Exchange (ETDEWEB)

    Pradhan, Debabrata [Department of Chemistry, Indian Institute of Technology Bombay, Mumbai 400 076 (India)]. E-mail: dpradhan@sciborg.uwaterloo.ca; Sharon, Maheshwar [Department of Chemistry, Indian Institute of Technology Bombay, Mumbai 400 076 (India)

    2007-06-30

    A simple thermal chemical vapor deposition technique is employed for the pyrolysis of a natural precursor 'camphor' and deposition of carbon films on alumina substrate at higher temperatures (600-900 deg. C). X-ray diffraction measurement reveals the amorphous structure of these films. The carbon films properties are found to significantly vary with the deposition temperatures. At higher deposition temperature, films have shown predominately sp{sup 2}-bonded carbon and therefore, higher conductivity and lower optical band gap (Tauc gap). These amorphous carbon (a-C) films are also characterized with Raman and X-ray photoelectron spectroscopy. In addition, electrical and optical properties are measured. The thermoelectric measurement shows these as-grown a-C films are p-type in nature.

  13. Physical and electrochemical characterization of amorphous lithium lanthanum titanate solid electrolyte thin-film fabricated by e-beam evaporation

    International Nuclear Information System (INIS)

    Amorphous lithium lanthanum titanate (LLTO) solid electrolyte thin-films have been fabricated by e-beam evaporation. The effect of different e-beam power on the physical properties and electrical performance of LLTO thin-film is investigated. Higher e-beam power is a key factor to obtain good quality LLTO thin-film which has higher ionic conductivity. X-ray diffraction patterns, X-ray photoelectron spectra, scanning electron microscopy and impedance spectroscopy are used to characterize their physical and electrical properties. An all-solid-state of Li/LiPON/LLTO/LiCoO2 cell using LLTO thin-film as solid electrolyte exhibits the first discharge capacity of about 50 μA h/cm2-μm and the capacity fading is about 0.5% per cycles after 100 discharge-charge cycles at discharge current of 7 μA/cm2, demonstrating the promise of e-beam evaporation deposition for the fabrication of LLTO thin-film for all-solid-state thin-film rechargeable lithium batteries

  14. Physical and electrochemical characterization of amorphous lithium lanthanum titanate solid electrolyte thin-film fabricated by e-beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Li Chilin [Department of Chemistry and Laser Chemistry Institute, Shanghai Key laboratory of Molecular Catalysts and Innovative Materials, Fudan University, Shanghai, 200433 (China); Zhang Bin [Department of Chemistry and Laser Chemistry Institute, Shanghai Key laboratory of Molecular Catalysts and Innovative Materials, Fudan University, Shanghai, 200433 (China); Fu Zhengwen [Department of Chemistry and Laser Chemistry Institute, Shanghai Key laboratory of Molecular Catalysts and Innovative Materials, Fudan University, Shanghai, 200433 (China)]. E-mail: zhengwen@sh163.net

    2006-12-05

    Amorphous lithium lanthanum titanate (LLTO) solid electrolyte thin-films have been fabricated by e-beam evaporation. The effect of different e-beam power on the physical properties and electrical performance of LLTO thin-film is investigated. Higher e-beam power is a key factor to obtain good quality LLTO thin-film which has higher ionic conductivity. X-ray diffraction patterns, X-ray photoelectron spectra, scanning electron microscopy and impedance spectroscopy are used to characterize their physical and electrical properties. An all-solid-state of Li/LiPON/LLTO/LiCoO{sub 2} cell using LLTO thin-film as solid electrolyte exhibits the first discharge capacity of about 50 {mu}A h/cm{sup 2}-{mu}m and the capacity fading is about 0.5% per cycles after 100 discharge-charge cycles at discharge current of 7 {mu}A/cm{sup 2}, demonstrating the promise of e-beam evaporation deposition for the fabrication of LLTO thin-film for all-solid-state thin-film rechargeable lithium batteries.

  15. Structural,Optical and Electrical Properties of Hydrogen-Doped Amorphous GaAs Thin Films

    Institute of Scientific and Technical Information of China (English)

    YAO Yan-Ping; LIU Chun-Ling; QIAO Zhong-Liang; LI Mei; GAO Xin; BO Bao-Xue

    2008-01-01

    @@ Amorphous GaAs films are deposited on substrates of quartz glass and silicon by rf magnetron sputtering technique in different gas ambient.First,the amorphous structure of the prepared samples is identified by x-ray diffraction.Second,analysis by radial distribution function and pair correlation function method is established to characterize the microstructure of the samples.Then,the content and bond type of hydrogen are analysed using Fourier transform infrared absorption spectroscopy.

  16. Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning Laser

    OpenAIRE

    Černý, R.; A. Kalbáč

    2000-01-01

    An optimum design of experimental setup for the preparation of polycrystalline silicon (pc-Si) films from amorphous layers applicable in the solar cell production is analyzed in the paper. In the computational simulations, the influence of basic characteristic parameters of the experimental procedure on the mechanisms of pc-Si lateral growth is studied. Among these parameters, the energy density of the applied laser and the thickness of the amorphous silicon (a-Si) layer are identified ...

  17. Magnetron sputtered transparent conductive zinc-oxide stabilized amorphous indium oxide thin films on polyethylene terephthalate substrates at ambient temperature

    International Nuclear Information System (INIS)

    Amorphous transparent conducting zinc-oxide stabilized indium oxide thin films, named amorphous indium zinc oxide (a-IZO), were deposited by direct current magnetron sputtering at ambient temperature on flexible polyethylene terephthalate substrates. It has been demonstrated that the electrical resistivity could attain as low as ∼ 5 × 10−4 Ω cm, which was noticeably lower than amorphous indium tin oxide films prepared at the same condition, while the visible transmittance exceeded 84% with the refractive index of 1.85–2.00. In our experiments, introduction of oxygen gas appeared to be beneficial to the improvement of the transparency and electrical conductivity. Both free carrier absorption and indirect transition were observed and Burstein–Moss effect proved a-IZO to be a degenerated amorphous semiconductor. However, the linear relation between the optical band gap and the band tail width which usually observed in covalent amorphous semiconductor such as a-Si:H was not conserved. Besides, porosity could greatly determine the resistivity and optical constants for the thickness variation at this deposition condition. Furthermore, a broad photoluminescence peak around 510 nm was identified when more than 1.5 sccm oxygen was introduced. - Highlights: ► Highly conducting amorphous zinc-oxide stabilized indium oxide thin films were prepared. ► The films were fabricated on polyethylene terephthalate at ambient temperature. ► Introduction of oxygen can improve the transparency and electrical conductivity. ► The linear relation between optical band gap and band tail width was not conserved

  18. The thermal properties of amorphous Fe40Pd40B20 and Fe60Pd20B20 thin films

    International Nuclear Information System (INIS)

    The thermal stability of FePdB thin films was studied using nonisothermal and isothermal analyses. X-ray diffraction (XRD) patterns indicated that Fe40Pd40B20 and Fe60Pd20B20 films with thicknesses in the range 25–75 Å were amorphous, whereas Fe40Pd40B20 and Fe60Pd20B20 films with thicknesses in the range 100–200 Å exhibited a nanocrystalline FePd (111) structure. The crucial glass forming ability index (γ and γm) was determined using the differential scanning calorimetry (DSC) results of amorphous FePdB films. The Kissinger formula was applied to calculate the activation energy (Q) of crystallization for determining the resistance of the films to crystallization. Thermal analysis showed that the thermal stability and incubation time of Fe40Pd40B20 are more favorable than those of Fe60Pd20B20. - Highlights: • FePdB films were amorphous in the range 25–75 Å. • FePdB films exhibited a FePd (111) structure in the range 100–200 Å. • The crucial glass forming ability index was determined using the DSC. • Kissinger formula was applied to calculate the activation energy of crystallization. • The thermal performance of Fe40Pd40B20 is more favorable than Fe60Pd20B20

  19. Structure and magnetic properties of amorphous and polycrystalline Fe3O4 thin films

    Institute of Scientific and Technical Information of China (English)

    TANG Xiao-li; ZHANG Huai-wu; SU Hua; ZHONG Zhi-yong; JING Yu-lan

    2006-01-01

    Half-metallic Fe3O4 films prepared by DC magnetron reactive sputtering with a tantalum(Ta) buffer layer was investigated. Primary emphasis is placed on the structural impact on its magnetic properties. The experimental results show that the amorphous Fe3O4 films exhibit a superparamagnetic response at a large-scale from 20 nm to 150 nm,and the magnetoresistance (MR) isn't detected. By contrast,the polycrystalline Fe3O4 films possess large saturation magnetization Ms of 420 A/(kg-cm) and a clear magnetoresistance with a field of 40 kA/m. The unusual properties for the amorphous Fe3O4 film are attributed to the existing large density of the similar structure as anti-phase boundaries in the film.

  20. Physical–chemical and biological behavior of an amorphous calcium phosphate thin film produced by RF-magnetron sputtering

    International Nuclear Information System (INIS)

    This work evaluates the thermal reactivity and the biological reactivity of an amorphous calcium phosphate thin film produced by radio frequency (RF) magnetron sputtering onto titanium substrates. The analyses showed that the sputtering conditions used in this work led to the deposition of an amorphous calcium phosphate. The thermal treatment of this amorphous coating in the presence of H2O and CO2 promoted the formation of a carbonated HA crystalline coating with the entrance of CO32− ions into the hydroxyl HA lattice. When immersed in culture medium, the amorphous and carbonated coatings exhibited a remarkable instability. The presence of proteins increased the dissolution process, which was confirmed by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Moreover, the carbonated HA coating induced precipitation independently of the presence of proteins under dynamic conditions. Despite this surface instability, this reactive calcium phosphate significantly improved the cellular behavior. The cell proliferation was higher on the Ticp than on the calcium phosphate coatings, but the two coatings increased cellular spreading and stress fiber formation. In this sense, the presence of reactive calcium phosphate coatings can stimulate cellular behavior. - Highlights: ► Functionalization of Ti with reactive CaP thin film by RF-magnetron sputtering. ► De-hydroxylation facilitating the insertion of CO32− into the HA lattice. ► High surface reactivity in the presence of culture medium. ► Cell behavior improved by the presence of reactive films.

  1. The chemisorption of H2O, HCOOH and CH3COOH on thin amorphous films of Al2O3

    Science.gov (United States)

    Lewis, B. F.; Weinberg, W. H.; Mosesman, M.

    1974-01-01

    Investigation of the irreversible chemisorption of water, formic acid and acetic acid on a thin amorphous aluminum oxide film, using inelastic tunneling spectroscopy. All of the tunnel junctions employed were Al-Al2O3-Pb junctions with the adsorbate on the Al2O3 surface between the Al2O3 and the Pb electrode. The results obtained include the finding that all Al2O3 surfaces prepared by oxidation of Al have free CH groups present on them.

  2. Growth of amorphous TeOx (2≤x≤3) thin film by radio frequency sputtering

    International Nuclear Information System (INIS)

    Thin films of Tellurium oxide TeOx over a wide range of x (2 to 3) were prepared by radio frequency diode sputtering at room temperature on corning glass and quartz substrate. The deposited films are amorphous in nature and IR spectroscopy reveals the formation of Te-O bond. X-ray photoelectron spectroscopy shows the variation in the stoichiometry of TeOx film from x=2 to 3 with an increase in oxygen percentage (25 to 100%) in processing sputtering gas composition. Raman spectroscopy depicts the formation of TeO3 trigonal pyramid besides TeO4 disphenoid in the amorphous TeOx film with increase in the value of x. The varying stoichiometry of TeOx thin film (x=2 to 3) was found to influence the optical, electrical, and elastic properties. The optical band gap of film increases from 3.8 to 4.2 eV with increasing x and is attributed to the decrease in density. The elastic constants (C11 and C44) of the deposited films are lower than the corresponding value reported for TeO2 single crystal

  3. Visible Absorption Properties of Retinoic Acid Controlled on Hydrogenated Amorphous Silicon Thin Film

    Science.gov (United States)

    Tsujiuchi, Yutaka; Masumoto, Hiroshi; Goto, Takashi

    2008-02-01

    Langmuir-Blodgett (LB) films of retinoic acid and LB films of retinoic acid mixed with a peptide that contains an alanine-lysine-valine (AKV) amino acid sequence deposited on a hydrogenated amorphous silicon (a-Si:H) film prepared by electron cyclotron resonance (ECR) plasma sputtering were fabricated, and their light absorption spectrums were compared. A specific visible light absorption at approximately 500 nm occurred in a film that had a film thickness of more than 80 nm and a hydrogen concentration of more than 20% in the sputtering process gas. Mixing the AKV sequence peptide with retinoic acid caused a 6 nm blueshift, from 363 to 357 nm, of the absorption maximum of the composite LB film on a SiO2 substrate. Using the same peptide, a large 30 nm blueshift, from 500 to 470 nm, was induced in the composite LB film on the a-Si:H film.

  4. Electrochromic and electrochemical properties of amorphous porous nickel hydroxide thin films

    International Nuclear Information System (INIS)

    Nickel hydroxide films were prepared using the chemical bath deposition (CBD) technique. The amorphous nature of the films was confirmed by X-ray diffraction measurements. X-ray photoelectron spectroscopy (XPS) measurements showed that the films exhibited nickel hydroxide nature. The porosity of the films was studied using optical measurements. The electrochromic properties of the porous nickel hydroxide layers were investigated, using cyclic voltammetry, chronoamperometry, in situ transmittance, UV-vis spectroscopy, and impedance spectroscopy. The change in the optical density (ΔOD) was found to be 0.79 for the as-deposited nickel hydroxide films, whereas it is 0.53 and 0.50 for the films annealed at 150 deg. C and 200 deg. C, respectively. The in situ transmittance and chronoamperometry curves revealed that the annealed films had a very fast colouration (tc b 2/C. The impedance measurements revealed the faster colouration and good electrochromic properties for the annealed nickel hydroxide films.

  5. Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors

    Science.gov (United States)

    Kim, Taeho; Nam, Yunyong; Hur, Ji-Hyun; Park, Sang-Hee Ko; Jeon, Sanghun

    2016-08-01

    Hydrogen in zinc oxide based semiconductors functions as a donor or a defect de-activator depending on its concentration, greatly affecting the device characteristics of oxide thin-film transistors (TFTs). Thus, controlling the hydrogen concentration in oxide semiconductors is very important for achieving high mobility and minimizing device instability. In this study, we investigated the charge transport dynamics of the amorphous semiconductor InGaZnO at various hydrogen concentrations as a function of the deposition temperature of the gate insulator. To examine the nature of dynamic charge trapping, we employed short-pulse current‑voltage and transient current‑time measurements. Among various examined oxide devices, that with a high hydrogen concentration exhibits the best performance characteristics, such as high saturation mobility (10.9 cm2 v‑1 s‑1), low subthreshold slope (0.12 V/dec), and negligible hysteresis, which stem from low defect densities and negligible transient charge trapping. Our finding indicates that hydrogen atoms effectively passivate the defects in subgap states of the bulk semiconductor, minimizing the mobility degradation and threshold voltage instability. This study indicates that hydrogen plays a useful role in TFTs by improving the device performance and stability.

  6. Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors.

    Science.gov (United States)

    Kim, Taeho; Nam, Yunyong; Hur, Ji-Hyun; Park, Sang-Hee Ko; Jeon, Sanghun

    2016-08-12

    Hydrogen in zinc oxide based semiconductors functions as a donor or a defect de-activator depending on its concentration, greatly affecting the device characteristics of oxide thin-film transistors (TFTs). Thus, controlling the hydrogen concentration in oxide semiconductors is very important for achieving high mobility and minimizing device instability. In this study, we investigated the charge transport dynamics of the amorphous semiconductor InGaZnO at various hydrogen concentrations as a function of the deposition temperature of the gate insulator. To examine the nature of dynamic charge trapping, we employed short-pulse current-voltage and transient current-time measurements. Among various examined oxide devices, that with a high hydrogen concentration exhibits the best performance characteristics, such as high saturation mobility (10.9 cm(2) v(-1) s(-1)), low subthreshold slope (0.12 V/dec), and negligible hysteresis, which stem from low defect densities and negligible transient charge trapping. Our finding indicates that hydrogen atoms effectively passivate the defects in subgap states of the bulk semiconductor, minimizing the mobility degradation and threshold voltage instability. This study indicates that hydrogen plays a useful role in TFTs by improving the device performance and stability. PMID:27363543

  7. A physics-based model of threshold voltage for amorphous oxide semiconductor thin-film transistors

    Science.gov (United States)

    Chen, Chi-Le; Chen, Wei-Feng; Zhou, Lei; Wu, Wei-Jing; Xu, Miao; Wang, Lei; Peng, Jun-Biao

    2016-03-01

    In the application of the Lambert W function, the surface potential for amorphous oxide semiconductor thin-film transistors (AOS TFTs) under the subthreshold region is approximated by an asymptotic equation only considering the tail states. While the surface potential under the above-threshold region is approximated by another asymptotic equation only considering the free carriers. The intersection point between these two asymptotic equations represents the transition from the weak accumulation to the strong accumulation. Therefore, the gate voltage corresponding to the intersection point is defined as threshold voltage of AOS TFTs. As a result, an analytical expression for the threshold voltage is derived from this novel definition. It is shown that the threshold voltage achieved by the proposed physics-based model is agreeable with that extracted by the conventional linear extrapolation method. Furthermore, we find that the free charge per unit area in the channel starts increasing sharply from the threshold voltage point, where the concentration of the free carriers is a little larger than that of the localized carriers. The proposed model for the threshold voltage of AOS TFTs is not only physically meaningful but also mathematically convenient, so it is expected to be useful for characterizing and modeling AOS TFTs.

  8. Controlled growth of nanocrystalline silicon within amorphous silicon carbide thin films

    Science.gov (United States)

    Kole, Arindam; Chaudhuri, Partha

    2014-04-01

    Controlled formation of nanocrystalline silicon (nc-Si) within hydrogenated amorphous silicon carbide (a-SiC:H) thin films has been demonstrated by a rf (13.56 MHz) plasma chemical vapour deposition (PECVD) method at a low deposition temperature of 200°C by regulating the deposition pressure (Pr) between 26.7 Pa and 133.3 Pa. Evolution of the size and the crystalline silicon volume fraction within the a-SiC:H matrix has been studied by XRD, Raman and HRTEM. The study reveals that at Pr of 26.7 Pa there are mostly isolated grains of nc-Si within the a-SiC:H matrix with average size of 4.5 nm. With increase of Pr the isolated nc-Si grains coalesce more and more giving rise to larger size connected nc-Si islands which appear as microcrystalline silicon in the Raman spectra. As a result net isolated nc-Si volume fraction decreases while the total crystalline silicon volume fraction increases.

  9. Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors

    International Nuclear Information System (INIS)

    Using practical high-density sputtering targets, we investigated the effect of Zn and W codoping on the thermal stability of the amorphous film and the electrical characteristics in thin film transistors. zinc oxide is a potentially conductive component while W oxide is an oxygen vacancy suppressor in oxide films. The oxygen vacancy from In-O and Zn-O was suppressed by the W additive because of the high oxygen bond dissociation energy. With controlled codoping of W and Zn, we demonstrated a high mobility with a maximum mobility of 40 cm2/V s with good stability under a negative bias stress in InWZnO thin film transistors

  10. Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kizu, Takio, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Tsukagoshi, Kazuhito, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Miyanaga, Miki; Awata, Hideaki [Advanced Materials R& D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koyakita, Itami, Hyogo 664-0016 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2015-09-28

    Using practical high-density sputtering targets, we investigated the effect of Zn and W codoping on the thermal stability of the amorphous film and the electrical characteristics in thin film transistors. zinc oxide is a potentially conductive component while W oxide is an oxygen vacancy suppressor in oxide films. The oxygen vacancy from In-O and Zn-O was suppressed by the W additive because of the high oxygen bond dissociation energy. With controlled codoping of W and Zn, we demonstrated a high mobility with a maximum mobility of 40 cm{sup 2}/V s with good stability under a negative bias stress in InWZnO thin film transistors.

  11. Solar cells and thin film LED using amorphous SiC. Amorphous SiC wo mochiita taiyou denchi oyobi usumaku LED

    Energy Technology Data Exchange (ETDEWEB)

    Hamakawa, Y. (Osaka Univ., Osaka (Japan). Faculty of Engineering Science)

    1990-03-25

    This paper introduced the photoelectric properties of amorphous SiC (a-SiC), application to highly efficient solar cells, application to wide area emitting elements such as LED (light emitting diode) and application to OEIC (optoelectronic integrated circuit) which is expected in near future. The light sensitizing effect in which photoconductivity of a-SiC:H film increases 2-3 figures by B dopping, was found. Flexible and wide area thin film LED has been able to manufacture by this discovery. In addition, highly efficient conversion rate has been able to get by the technical development such as solar cells made of a-SiC/ a-Si hetrojunction. Further, wide area sollar cells has been able to manufacture on any substrate by the development of TFLED (thin film light emitting diode). The application of TFLED made of SiC to OEIC is also investigated. 18 refs., 15 figs., 2 tabs.

  12. Amorphous Interface Layer in Thin Graphite Films Grown on the Carbon Face of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Colby, R.; Stach, E.; Bolen, M.L.; Capano, M.A.

    2011-09-05

    Cross-sectional transmission electron microscopy (TEM) is used to characterize an amorphous layer observed at the interface in graphite and graphene films grown via thermal decomposition of C-face 4H-SiC. The amorphous layer does not cover the entire interface, but uniform contiguous regions span microns of cross-sectional interface. Scanning transmission electron microscopy (STEM) images and electron energy loss spectroscopy (EELS) demonstrate that the amorphous layer is a carbon-rich composition of Si/C. The amorphous layer is clearly observed in samples grown at 1600 C for a range of growth pressures in argon, but not at 1500 C, suggesting a temperature-dependent formation mechanism.

  13. Heat capacity of amorphous and disordered Nb3Ge thin films

    International Nuclear Information System (INIS)

    Heat capacity measurements on 1000 to 1500A thick amorphous Nb3Ge and granular Al films have been carried out using an ac technique. The major goal of the experiment was to study the effect of thermal fluctuations, both above and below the superconducting transition temperature T/sub c/, in dirty, short meanfree path materials

  14. Electrochemical characterization of amorphous LiFe(WO4)2 thin films as positive electrodes for rechargeable lithium batteries

    International Nuclear Information System (INIS)

    Amorphous LiFe(WO4)2 thin films have been fabricated by radio-frequency (R.F.) sputtering deposition at room temperature. The as-deposited and electrochemically cycled thin films are, respectively, characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, selected area electron diffraction, and X-ray photoelectron spectra techniques. An initial discharge capacity of 198 mAh/g in Li/LiFe(WO4)2 cells is obtained, and the electrochemical behavior is mostly preserved in the following cycling. These results identified the electrochemical reactivity of two redox couples, Fe3+/Fe2+ and W6+/Wx+ (x = 4 or 5). The kinetic parameters and chemical diffusion coefficients of Li intercalation/deintercalation are estimated by cyclic voltammetry and alternate-current (AC) impedance measurements. All-solid-state thin film lithium batteries with Li/LiPON/LiFe(WO4)2 layers are fabricated and show high capacity of 104 μAh/cm2 μm in the first discharge. As-deposited LiFe(WO4)2 thin film is expected to be a promising positive electrode material for future rechargeable thin film batteries due to its large volumetric rate capacity, low-temperature fabrication and good electrode/electrolyte interface

  15. An Effective Method for Improvement of Field Electron Emission Site Density and Uniformity of Amorphous Carbon Thin Films

    Institute of Scientific and Technical Information of China (English)

    WANG Xiao-Ping; WANG Li-Jun; ZHANG Bing-Lin; YAO Ning; ZANG Qi-Ren; CHEN Jun; DUAN Xin-Chao

    2006-01-01

    @@ Amorphous carbon films are deposited on the Mo film/ceramic substrates, which are pretreated by a laser spat-tering chiselling technique (2 line/mm), by using the microwave chemical vapour deposition technique. The films are characterized by x-ray diffraction, Raman spectrum, optical microscopy, and scanning electron microscopy.The experimental result indicates that the laser spattering chiselling pretreated techniques can essentially improve the field emission uniformity and the emission site density of the amorphous carbon thin film devices so that its emission site density can reach the level of actual application (undistinguishable by naked eye) from a broad well-proportioned emission area of 50mm × 50mm. This kind of device can show various digits and words clearly. The lowest turn-on field below 1 V/m, the emission current density over 5.0 ±0.1 mA/cm2, and the highest luminance 1.0 × 103 cd/m2 are obtained. Meanwhile, the role of the laser spattering chiselling techniques in improving the field emission properties of the amorphous carbon film are explained.

  16. Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D., E-mail: music@mch.rwth-aachen.de; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Bednarcik, J.; Michalikova, J. [Deutsches Elektronen Synchrotron DESY, FS-PE group, Notkestrasse 85, D-22607 Hamburg (Germany)

    2015-01-14

    Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O{sub 2} atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al{sub 2}O{sub 3} formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO{sub 2} at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al{sub 2}O{sub 3} with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds.

  17. Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

    International Nuclear Information System (INIS)

    Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O2 atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al2O3 formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO2 at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al2O3 with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds

  18. The thickness dependence of the crystallization behavior in sandwiched amorphous Ge2Sb2Te5 thin films

    Science.gov (United States)

    Bai, G.; Li, R.; Xu, H. N.; Xia, Y. D.; Liu, Z. G.; Lu, H. M.; Yin, J.

    2011-12-01

    The thickness dependent crystallization behavior of thin amorphous Ge2Sb2Te5(GST) films sandwiched between different cladding materials has been investigated based on a thermodynamic model. It is revealed that there is a critical thickness below which the crystallization cannot occur. The critical thickness is determined by the energy difference Δγ between the crystalline GST/substrate interface energy and the amorphous GST/substrate interface energy, the melting enthalpy, and the mole volume. The calculated result is in good agreement with the experiments. Furthermore, the crystallization temperature is also affected by interface energy difference Δγ. Larger Δγ gives rise to a higher crystallization temperature, and vice versa. This impact becomes stronger as the film thickness is decreased.

  19. Amorphous Si layers co-doped with B and Mn: Thin film growth and steering of magnetic properties

    International Nuclear Information System (INIS)

    Amorphous silicon thin films co-doped with manganese (5% at.) and boron (1.8% at.) have been prepared by RF sputtering on Al2O3 substrates held at room temperature (RT). The films, with an average thickness of about 0.9 μm, were carefully characterized by micro-Raman and X-ray photoemission spectroscopies. A ferromagnetic (FM) behavior up to RT was observed. In order to discuss and possibly rule out extrinsic effects usually related to segregations of ferromagnetic impurities in the samples, magnetization measurements were carried out on the Al2O3 substrates, as well as on Si:B and Si:Mn films grown with the same RF sputtering system. Only the Si:B:Mn films displayed a FM behavior up to RT. Since amorphous films doped with Mn alone did not display any signature of FM ordering, boron co-doping results to be crucial for the onset of the FM behavior. The conductivity of the samples is not affected by boron doping that, therefore, does not appear to significantly contribute to a possible carrier-mediated FM interaction between Mn ions by supplying extra charges to the system. On this basis, the capability of B to hinder the quenching of the Mn 3d magnetic moments has also to be regarded as a possible role of this co-dopant in the observed magnetization. - Highlights: • We successfully deposited amorphous silicon thin films co-doped with Mn and B. • Structural, electronic, and magnetic properties have been carefully characterized. • A ferromagnetic behavior up to room temperature was detected. • The extrinsic origin of magnetism is excluded. • Boron can play a relevant role to avoid quenching of magnetic moment in Mn ions

  20. Localization correction to the anomalous Hall effect in amorphous CoFeB thin films

    Institute of Scientific and Technical Information of China (English)

    丁进军; 吴少兵; 杨晓非; 朱涛

    2015-01-01

    An obvious weak localization correction to anomalous Hall conductance (AHC) in very thin CoFeB film is reported. We find that both the weak localization to AHC and the mechanism of anomalous Hall effect are related to the CoFeB thickness. When the film is thicker than 3 nm, the side jump mechanism dominates and the weak localization to AHC vanishes. For very thin CoFeB films, both the side jump and skew scattering mechanisms contribute to the anomalous Hall effect, and the weak localization correction to AHC is observed.

  1. Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, M., E-mail: mmoreno@inaoep.mx [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Delgadillo, N. [Universidad Autónoma de Tlaxcala, Av. Universidad No. 1, Z. P. 90006 Tlaxcala (Mexico); Torres, A. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Ambrosio, R. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua (Mexico); Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico)

    2013-12-02

    In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E{sub a}) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ{sub RT}), E{sub a} and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E{sub a}, TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors.

  2. Study on the Crystallization of Amorphous Cr-Si-Ni Thin Films Using in situ X-ray Diffraction

    Institute of Scientific and Technical Information of China (English)

    Xianping DONG; Jiansheng WU

    2001-01-01

    Crystallization behavior of amorphous Cr-Si-Ni thin films was investigated by means of high temperature in situ X-ray diffraction measurements. The diffraction spectra were recorded isothermally at temperature between 250 and 750℃. The in situ testing of crystallization enables the direct observation of structure evolution which is dependent on heat treatment.Based on the testing results, the grain sizes of the crystalline phases were compared and phase transition tendency was understood. In the mean time, electrical properties of the films as functions of annealing temperature and time have been studied. The increase of volume fraction of CrSi2 crystallinc phases in the Cr-Si-Ni films leads to the decrease in conductivity of the films.The annealing behavior of temperature coefficient of resistance (TCR) is a result of competition between a negative contribution caused by the weak localization effects in amorphous region and a positive contribution caused by CrSi2 grains. Thus the proper mixture of amorphous and crystalline constituents could result in a final zero TCR.

  3. High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

    KAUST Repository

    Nayak, Pradipta K.

    2012-05-16

    Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors(TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.

  4. Effect of ambient gaseous environment on the properties of amorphous carbon thin films

    International Nuclear Information System (INIS)

    Amorphous carbon films have been deposited by filtered cathodic jet carbon arc technique under different gaseous environments. Scanning electron microscope and atomic force microscope studies have been performed on the deposited films for the surface morphological studies. The morphology of the deposited film changes with the change in gas environment. X-ray photoelectron spectroscopic (XPS) and Raman studies have been carried out on the deposited samples for the evaluation of the chemical bonding of carbon atoms with the ambient gas atoms. The sp3 and sp2 contents have been evaluated from the XPS studies and found to be dependent on the gaseous environment. The film deposited under hydrogen environment has the highest value of the sp3 content (54.6 at.%) whereas the film deposited under helium environment has the lowest value of sp3 content (37 at.%). For the evaluation of the electrical and mechanical properties of the deposited films, the electrical conductivity and nanoindentation measurements have been performed on the deposited films. It has been observed that the film deposited under helium environment has the highest electrical conductivity and the lowest hardness (∼15 GPa) value whereas film deposited under hydrogen environment has the highest hardness (∼21 GPa) and the lowest conductivity.

  5. Strain-induced photoconductivity in thin films of Co doped amorphous carbon.

    Science.gov (United States)

    Jiang, Y C; Gao, J

    2014-01-01

    Traditionally, strain effect was mainly considered in the materials with periodic lattice structure, and was thought to be very weak in amorphous semiconductors. Here, we investigate the effects of strain in films of cobalt-doped amorphous carbon (Co-C) grown on 0.7PbMg(1/3)Nb(2/3)O3-0.3PbTiO3 (PMN-PT) substrates. The electric transport properties of the Co-C films were effectively modulated by the piezoelectric substrates. Moreover, we observed, for the first time, strain-induced photoconductivity in such an amorphous semiconductor. Without strain, no photoconductivity was observed. When subjected to strain, the Co-C films exhibited significant photoconductivity under illumination by a 532-nm monochromatic light. A strain-modified photoconductivity theory was developed to elucidate the possible mechanism of this remarkable phenomenon. The good agreement between the theoretical and experimental results indicates that strain-induced photoconductivity may derive from modulation of the band structure via the strain effect. PMID:25338641

  6. Electrochromic and electrochemical properties of amorphous porous nickel hydroxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Inamdar, A.I. [Department of Semiconductor Science, Dongguk University, Seoul 100-715 (Korea, Republic of); Sonavane, A.C. [Thin Films Materials Laboratory, Department of physics, Shivaji University, Kolhapur 416 004 (India); Pawar, S.M. [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Kim, YoungSam [Department of Semiconductor Science, Dongguk University, Seoul 100-715 (Korea, Republic of); Kim, J.H. [Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757 (Korea, Republic of); Patil, P.S. [Thin Films Materials Laboratory, Department of physics, Shivaji University, Kolhapur 416 004 (India); Jung, Woong [Department of Semiconductor Science, Dongguk University, Seoul 100-715 (Korea, Republic of); Im, Hyunsik, E-mail: hyunsik7@dongguk.edu [Department of Semiconductor Science, Dongguk University, Seoul 100-715 (Korea, Republic of); Kim, Dae-Young [Department of Biological and Environmental Science, Dongguk University, Seoul 100-715 (Korea, Republic of); Kim, Hyungsang [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of)

    2011-09-01

    Nickel hydroxide films were prepared using the chemical bath deposition (CBD) technique. The amorphous nature of the films was confirmed by X-ray diffraction measurements. X-ray photoelectron spectroscopy (XPS) measurements showed that the films exhibited nickel hydroxide nature. The porosity of the films was studied using optical measurements. The electrochromic properties of the porous nickel hydroxide layers were investigated, using cyclic voltammetry, chronoamperometry, in situ transmittance, UV-vis spectroscopy, and impedance spectroscopy. The change in the optical density ({Delta}OD) was found to be 0.79 for the as-deposited nickel hydroxide films, whereas it is 0.53 and 0.50 for the films annealed at 150 deg. C and 200 deg. C, respectively. The in situ transmittance and chronoamperometry curves revealed that the annealed films had a very fast colouration (t{sub c} < 290 ms) and decolouration (t{sub b} < 130 ms). The measured colouration efficiencies range between 30 and 40 cm{sup 2}/C. The impedance measurements revealed the faster colouration and good electrochromic properties for the annealed nickel hydroxide films.

  7. Characterization and FDTD simulation analysis on light trapping structures of amorphous silicon thin films by laser irradiation

    Science.gov (United States)

    Huang, Lu; Jin, Jing; Yuan, Zhijun; Yang, Weiguang; Wang, Linjun; Shi, Weimin; Zhou, Jun; Lou, Qihong

    2016-05-01

    The effect of laser energy density on the light-trapping structures of amorphous silicon (α-Si) thin films is studied both theoretically and experimentally. The thin films are irradiated by a frequency-doubled (λ = 532 nm) Nd:YAG pulsed nanosecond laser. An effective finite difference time domain (FDTD) model is built to find the optimized laser energy density (EL) for the light trapping structures of α-Si. Based on the simulation analysis, it shows the variation of reflection spectra with laser energy density. The optimized reflection spectra at EL = 1000 mJ/cm2 measured by UV-visible spectroscopy confirms to agree well with that corresponding to the depth to diameter ratio (h/D) in the FDTD simulation. The surface morphology characterization by optical microscope (OM) and scanning electron microscope (SEM) accords fairly well to of light-trapping modeling in the simulation.

  8. Amorphous carbon thin films deposited on Si and PET: Study of interface states

    International Nuclear Information System (INIS)

    Thin carbon films with various thickness, deposited on different substrates (Si and poly-ethylene-terephthalate) at the same operating conditions in a ratio frequency plasma enhanced chemical vapor deposition system were characterized by Doppler broadening spectroscopy. The films and the substrates were depth profiled by a slow positron beam. The aim od these measurements was to study the open volume structure and the interface of the films. It was found that, independently from the substrate, the films were homogeneous and exhibited to some open volume distribution. On the contrary, the effective positron diffusion length in the Si substrate was found to change with the thickness of the carbon films. This behaviour was found to change with the thickness of the carbon films. This behaviour was interpreted as a change in the electric field at the carbon/silicon interface. (author)

  9. Interlayer coupling dependent magnetic properties in amorphous and nanocrystalline FeTaC based multilayer thin films

    International Nuclear Information System (INIS)

    We report systematic studies on the effects of heat treatment, the number of multilayers and temperature on interlayer coupling dependent magnetic properties in amorphous and nanocrystalline ([FeTaC(y nm)/ Ta(1 nm)]n=1–4/ FeTaC(y nm)/substrate) multilayer structured thin films fabricated directly on thermally oxidized Si substrate at ambient temperature and post annealed at different elevated temperatures (T A). As-deposited films and the films annealed at 200 °C exhibit an amorphous structure. With an increase in T A  ⩾  300 °C, the nucleation of fine nanocrystals in a residual amorphous matrix appears and a fraction of such nanocrystals increases with increasing T A. The changes in the microstructure modify the interlayer coupling between FeTaC ferromagnetic layers due to the release of stress accumulated during film deposition and enhanced interface roughness with increasing T A. As a result, a change in the shape of the magnetic hysteresis (M-H) loop and multistep magnetization reversal process, where the number of steps in the M-H loop, their nature and positions strongly depend on the number of multilayers, T A and temperature, were observed. As-deposited films and the films annealed at 200 °C exhibit multistep magnetization reversal behavior only at temperatures below 80 K, but the films annealed above 200 °C show such multistep reversal behavior even at 300 K. This causes an unusual variation of temperature-dependent coercivity in these multilayer films having different microstructures. Furthermore, the coercivity due to individual or collective switching between FeTaC layers in these films varies unusually and is substantially influenced by the bottom FeTaC layer grown directly on the substrate. The observed results were discussed on the basis of variation in interlayer coupling with the multilayer structure, post annealing conditions and temperature. This provided evidence of controlling the soft magnetic properties and

  10. Interlayer coupling dependent magnetic properties in amorphous and nanocrystalline FeTaC based multilayer thin films

    Science.gov (United States)

    Singh, Akhilesh K.; Perumal, Alagarsamy

    2016-03-01

    We report systematic studies on the effects of heat treatment, the number of multilayers and temperature on interlayer coupling dependent magnetic properties in amorphous and nanocrystalline ([FeTaC(y nm)/ Ta(1 nm)] n=1-4/ FeTaC(y nm)/substrate) multilayer structured thin films fabricated directly on thermally oxidized Si substrate at ambient temperature and post annealed at different elevated temperatures (T A). As-deposited films and the films annealed at 200 °C exhibit an amorphous structure. With an increase in T A  ⩾  300 °C, the nucleation of fine nanocrystals in a residual amorphous matrix appears and a fraction of such nanocrystals increases with increasing T A. The changes in the microstructure modify the interlayer coupling between FeTaC ferromagnetic layers due to the release of stress accumulated during film deposition and enhanced interface roughness with increasing T A. As a result, a change in the shape of the magnetic hysteresis (M-H) loop and multistep magnetization reversal process, where the number of steps in the M-H loop, their nature and positions strongly depend on the number of multilayers, T A and temperature, were observed. As-deposited films and the films annealed at 200 °C exhibit multistep magnetization reversal behavior only at temperatures below 80 K, but the films annealed above 200 °C show such multistep reversal behavior even at 300 K. This causes an unusual variation of temperature-dependent coercivity in these multilayer films having different microstructures. Furthermore, the coercivity due to individual or collective switching between FeTaC layers in these films varies unusually and is substantially influenced by the bottom FeTaC layer grown directly on the substrate. The observed results were discussed on the basis of variation in interlayer coupling with the multilayer structure, post annealing conditions and temperature. This provided evidence of controlling the soft magnetic properties and

  11. Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

    Science.gov (United States)

    Abdulraheem, Yaser; Gordon, Ivan; Bearda, Twan; Meddeb, Hosny; Poortmans, Jozef

    2014-05-01

    An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vapor deposition (PECVD). The layer thicknesses along with their optical properties -including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE) in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc) bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause of the observed

  12. Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

    Directory of Open Access Journals (Sweden)

    Yaser Abdulraheem

    2014-05-01

    Full Text Available An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si wafers by plasma enhanced chemical vapor deposition (PECVD. The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause

  13. Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

    International Nuclear Information System (INIS)

    An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vapor deposition (PECVD). The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE) in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc) bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause of the observed

  14. Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Abdulraheem, Yaser, E-mail: yaser.abdulraheem@kuniv.edu.kw [Electrical Engineering Department, College of Engineering and Petroleum, Kuwait University. P.O. Box 5969, 13060 Safat (Kuwait); Gordon, Ivan; Bearda, Twan; Meddeb, Hosny; Poortmans, Jozef [IMEC, Kapeldreef 75, 3001, Leuven (Belgium)

    2014-05-15

    An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vapor deposition (PECVD). The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE) in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc) bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause of the observed

  15. Low temperature plasma deposition of silicon thin films: From amorphous to crystalline

    OpenAIRE

    Roca I Cabarrocas, Pere; Cariou, Romain; Labrune, Martin

    2012-01-01

    International audience We report on the epitaxial growth of crystalline silicon films on (100) oriented crystalline silicon substrates by standard plasma enhanced chemical vapor deposition at 175 °C. Such unexpected epitaxial growth is discussed in the context of deposition processes of silicon thin films, based on silicon radicals and nanocrystals. Our results are supported by previous studies on plasma synthesis of silicon nanocrystals and point toward silicon nanocrystals being the most...

  16. Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

    Directory of Open Access Journals (Sweden)

    Jaewook Jeong

    2016-08-01

    Full Text Available In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer.

  17. Electronic Sputtering of Nanodimensional Hydrogenated Amorphous Carbon and Copper Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    S. Ghosh

    2009-07-01

    Full Text Available Electronic sputtering of carbon from hydrogenated amorphous carbon (a-C:H/Si film and oxygen from copper oxide (CuO/Si film at different electronic energy loss (Se value is reported. The sputtering is monitored by online elastic recoil detection analysis (ERDA technique and the yield (sputtered atoms/incident ion is determined. Two important results emerging out from this study are: (i much higher yield of C and O from a-C:H and CuO films as compared to conventional kinetic sputtering and (ii sputtering yield increases with increase in Se in both the cases. These observations are understood on the basis of thermal spike model of ion-solid interaction.Defence Science Journal, 2009, 59(4, pp.370-376, DOI:http://dx.doi.org/10.14429/dsj.59.1536

  18. Electronic structure of amorphous InGaO3(ZnO)0.5 thin films

    International Nuclear Information System (INIS)

    The electronic structure of amorphous semiconductor InGaO3(ZnO)0.5 thin films, which were deposited by radio-frequency magnetron sputtering process, was investigated using X-ray photoelectron spectroscopy and O K-edge X-ray absorption spectroscopy. The overall features of the valence and conduction bands were analyzed by comparing with the spectra of Ga2O3, In2O3, and ZnO films. The valence and conduction band edges are mainly composed of O 2p and In 5sp states, respectively. The bandgap of the films determined by spectroscopic ellipsometry was approximately 3.2 eV. Further, it is found that the introduction of oxygen gas during the sputter-deposition does not induce significant variations in the chemical states and band structure.

  19. Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning Laser

    Directory of Open Access Journals (Sweden)

    R. Černý

    2000-01-01

    Full Text Available An optimum design of experimental setup for the preparation of polycrystalline silicon (pc-Si films from amorphous layers applicable in the solar cell production is analyzed in the paper. In the computational simulations, the influence of basic characteristic parameters of the experimental procedure on the mechanisms of pc-Si lateral growth is studied. Among these parameters, the energy density of the applied laser and the thickness of the amorphous silicon (a-Si layer are identified as the most significant. As an optimum solution, the mechanism of pc-Si growth consisting in repeated melting of a part of already crystallized pc-Si layer by the scanning laser is proposed.

  20. Amorphization and recrystallization processes in monocrystalline beta silicon carbide thin films

    International Nuclear Information System (INIS)

    Individual, as well as multiple doses of 27Al+, 31P+, 28Si+, and 28Si+ and 12C+, were implanted into (100) oriented monocrystalline β-SiC films. The critical energy of approx. =16 eV/atom required for the amorphization of β-SiC via implantation of 27Al+ and 31P+ was determined using the TRIM84 computer program for calculation of the damage-energy profiles coupled with the results of RBS/ion channeling analyses. In order to recrystallize amorphized layers created by the individual implantation of all four ion species, thermal annealing at 1600, 1700, or 18000C was employed. Characterization of the recrystallized layers was performed using XTEM. Examples of SPE regrown layers containing precipitates and dislocation loops, highly faulted-microtwinned regions, and random crystallites were observed

  1. Behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic modules under outdoor long term exposure.

    Science.gov (United States)

    Kichou, Sofiane; Silvestre, Santiago; Nofuentes, Gustavo; Torres-Ramírez, Miguel; Chouder, Aissa; Guasch, Daniel

    2016-06-01

    Four years׳ behavioral data of thin-film single junction amorphous silicon (a-Si) photovoltaic (PV) modules installed in a relatively dry and sunny inland site with a Continental-Mediterranean climate (in the city of Jaén, Spain) are presented in this article. The shared data contributes to clarify how the Light Induced Degradation (LID) impacts the output power generated by the PV array, especially in the first days of exposure under outdoor conditions. Furthermore, a valuable methodology is provided in this data article permitting the assessment of the degradation rate and the stabilization period of the PV modules. Further discussions and interpretations concerning the data shared in this article can be found in the research paper "Characterization of degradation and evaluation of model parameters of amorphous silicon photovoltaic modules under outdoor long term exposure" (Kichou et al., 2016) [1]. PMID:26977439

  2. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

    KAUST Repository

    Nayak, Pradipta K.

    2013-05-08

    It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility - 5.6 cm2 V-1 s-1 with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 108 - was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing. © 2013 American Chemical Society.

  3. Absence of mode-locking resonance for driven vortices in a thin amorphous MoxGe1−x film

    International Nuclear Information System (INIS)

    We present measurements of the mode-locking (ML) resonance for the thin amorphous MoxGe1−x film with weak pinning. In contrast to the thick film, where the clear ML resonance indicative of driven vortex lattices is observed over a wide temperature T and field B range, any sign of ML is not detected for the thin film down to below 1 K The results suggest that the vortex lattice for the thin film may be unstable against small pinning. We construct the vortex phase diagram in the B − T plane, which consists of disordered solid phase and large liquid phase.

  4. Deposition and characterization of amorphous electroless Ni-Co-P alloy thin film for ULSI application

    International Nuclear Information System (INIS)

    Electroless based Ni-Co-P alloy thin films were deposited using sodium hypophosphite as a reducing agent and sodium citrate as a complexing agent in an alkaline plating bath. The effect of solution pH and temperature on the plating rate was examined. The decrease in activation energy (81.35 − 73.54 kJ mole−1) for the Ni-Co-P thin films deposited on corning glass was observed with the increase in pH (8.5–9.38) of the plating bath. There is a significant decrease in sheet resistance of alloy thin films as the post deposition annealing temperature approaches 400 °C. The presence of nickel as well as nickel phosphide peaks and transition from metastable Ni12P5, Ni8P5 and Ni5P2 phases into thermodynamically stable NiP, NiP2, Ni3P phases after annealing at 600 °C was observed in XRD spectra, indicating the crystallization of the thin films. Surface topography analysis shows the variation of grain size in the range 20–40 nm. (paper)

  5. Room temperature photoluminescence spectrum modeling of hydrogenated amorphous silicon carbide thin films by a joint density of tail states approach and its application to plasma deposited hydrogenated amorphous silicon carbide thin films

    International Nuclear Information System (INIS)

    Room temperature photoluminescence (PL) spectrum of hydrogenated amorphous silicon carbide (a-SiCx:H) thin films was modeled by a joint density of tail states approach. In the frame of these analyses, the density of tail states was defined in terms of empirical Gaussian functions for conduction and valance bands. The PL spectrum was represented in terms of an integral of joint density of states functions and Fermi distribution function. The analyses were performed for various values of energy band gap, Fermi energy and disorder parameter, which is a parameter that represents the width of the energy band tails. Finally, the model was applied to the measured room temperature PL spectra of a-SiCx:H thin films deposited by plasma enhanced chemical vapor deposition system, with various carbon contents, which were determined by X-ray photoelectron spectroscopy measurements. The energy band gap and disorder parameters of the conduction and valance band tails were determined and compared with the optical energies and Urbach energies, obtained by UV–Visible transmittance measurements. As a result of the analyses, it was observed that the proposed model sufficiently represents the room temperature PL spectra of a-SiCx:H thin films. - Highlights: ► Photoluminescence spectra (PL) of the films were modeled. ► In the model, joint density of tail states and Fermi distribution function are used. ► Various values of energy band gap, Fermi energy and disorder parameter are applied. ► The model was applied to the measured PL of the films. ► The proposed model represented the room temperature PL spectrum of the films.

  6. Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films

    International Nuclear Information System (INIS)

    Without extra heating, Al2O3 thin films were deposited on a hydrogen-terminated Si substrate etched in hydrofluoric acid by using a self-built electron cyclotron resonance (ECR) plasma-assisted atomic layer deposition (ALD) device with Al(CH3)3 (trimethylaluminum; TMA) and O2 used as precursor and oxidant, respectively. During the deposition process, Ar was introduced as a carrier and purging gas. The chemical composition and microstructure of the as-deposited Al2O3 films were characterized by using X-ray diffraction (XRD), an X-ray photoelectric spectroscope (XPS), a scanning electron microscope (SEM), an atomic force microscope (AFM) and a high-resolution transmission electron microscope (HRTEM). It achieved a growth rate of 0.24 nm/cycle, which is much higher than that deposited by thermal ALD. It was found that the smooth surface thin film was amorphous alumina, and an interfacial layer formed with a thickness of ca. 2 nm was observed between the Al2O3 film and substrate Si by HRTEM. We conclude that ECR plasma-assisted ALD can grow Al2O3 films with an excellent quality at a high growth rate at ambient temperature.

  7. Impact of contamination on hydrogenated amorphous silicon thin films and solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Woerdenweber, Jan

    2011-09-26

    This thesis deals with atmospheric contamination and cross-contamination of boron (single-chamber process) of the intrinsic absorber layer (i-layer) of p-i-n thin film solar cells based on hydrogenated amorphous silicon. The atmospheric contaminations were introduced by means of intentional leaks. Hereby, the focus is on the influence of contamination species (oxygen and nitrogen), quantity of contamination (leak flow), source of contamination (leaks at chamber wall or in the process gas pipe), and plasma power on the properties of solar cells. Thereby, the minimum requirements for the purity of vacuum and process gas as well as leak conditions of the recipient and gas pipe system have been determined. Additionally, deposition regimes were developed, where the incorporation of impurities is significantly suppressed. For standard processes critical levels of nitrogen and oxygen contamination are determined to be {proportional_to} 4 x 10{sup 18} cm{sup -3} and {proportional_to} 2 x 10{sup 19} cm{sup -3}, respectively, for a leak situated at the chamber wall. Above these concentrations the solar cell efficiency deteriorates. In literature, incorporation of oxygen and nitrogen in doping configuration is assumed to be the reason for the cell deterioration. This assumption is supported by additional material studies of contaminated absorber layers done in this work. The difference in critical concentration is due to the higher doping efficiency of nitrogen compared to that for oxygen. Nevertheless, applying an air leak the critical concentrations of O and N are reached almost simultaneously since the incorporation probability of oxygen is about one order of magnitude higher compared to that for nitrogen. Applying a leak in the process gas pipe the critical oxygen contamination level increases to {proportional_to} 2 x 10{sup 20} cm{sup -3} whereas the critical nitrogen level remains unchanged compared to a chamber wall leak. Applying a deposition regime with a very high

  8. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  9. Hydrogenated amorphous silicon thin-film deposition by direct photo-enhanced decomposition of silane using an internal hydrogen discharge lamp

    International Nuclear Information System (INIS)

    Hydrogenated amorphous silicon (a-Si:H) thin films have been deposited from silane using a novel photo-enhanced decomposition technique. The system comprises a hydrogen discharge lamp contained within the reaction vessel; this unified approach allows high energy photon excitation of the silane molecules without absorption by window materials or the need for mercury sensitisation. The film growth rates (exceeding 4 A/s) and material properties obtained are comparable to those of films produced by plasma-enhanced CVD techniques. The reduction of energetic charged particles in the film growth region should enable the fabrication of cleaner semiconductor/insulator interfaces in thin-film transistors

  10. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    International Nuclear Information System (INIS)

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm2 aperture area on the graphite substrate. The optical properties of the SiNx/a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiNx/a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiNx/a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance

  11. Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching

    International Nuclear Information System (INIS)

    In this work, we present the formation of porous layers on hydrogenated amorphous SiC (a-SiC: H) by Ag-assisted photochemical etching using HF/K2S2O8 solution under UV illumination at 254 nm wavelength. The amorphous films a-SiC: H were elaborated by d.c. magnetron sputtering using a hot pressed polycrystalline 6H-SiC target. Because of the high resistivity of the SiC layer, around 1.6 MΩ cm and in order to facilitate the chemical etching, a thin metallic film of high purity silver (Ag) has been deposited under vacuum onto the thin a-SiC: H layer. The etched surface was characterized by scanning electron microscopy, secondary ion mass spectroscopy, infrared spectroscopy and photoluminescence. The results show that the morphology of etched a-SiC: H surface evolves with etching time. For an etching time of 20 min the surface presents a hemispherical crater, indicating that the porous SiC layer is perforated. Photoluminescence characterization of etched a-SiC: H samples for 20 min shows a high and an intense blue PL, whereas it has been shown that the PL decreases for higher etching time. Finally, a dissolution mechanism of the silicon carbide in 1HF/1K2S2O8 solution has been proposed.

  12. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    Energy Technology Data Exchange (ETDEWEB)

    Li, Da; Kunz, Thomas [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Photovoltaics and Thermosensoric, Haberstr. 2a, 91058 Erlangen (Germany); Wolf, Nadine [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Energy Efficiency, Am Galgenberg 87, 97074 Wuerzburg (Germany); Liebig, Jan Philipp [Materials Science and Engineering, Institute I, University of Erlangen-Nuremberg, Martensstr. 5, 91058 Erlangen (Germany); Wittmann, Stephan; Ahmad, Taimoor; Hessmann, Maik T.; Auer, Richard [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Photovoltaics and Thermosensoric, Haberstr. 2a, 91058 Erlangen (Germany); Göken, Mathias [Materials Science and Engineering, Institute I, University of Erlangen-Nuremberg, Martensstr. 5, 91058 Erlangen (Germany); Brabec, Christoph J. [Bavarian Center for Applied Energy Research (ZAE Bayern), Division: Photovoltaics and Thermosensoric, Haberstr. 2a, 91058 Erlangen (Germany); Institute of Materials for Electronics and Energy Technology, University of Erlangen-Nuremberg, Martensstr. 7, 91058 Erlangen (Germany)

    2015-05-29

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm{sup 2} aperture area on the graphite substrate. The optical properties of the SiN{sub x}/a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiN{sub x}/a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiN{sub x}/a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance.

  13. Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

    OpenAIRE

    Kiani, Ahmed; Hasko1, David G; William I. Milne; Flewitt, Andrew J.

    2013-01-01

    It is widely reported that threshold voltage and on-state current of amorphous indiumgallium- zinc-oxide bottom-gate thin-film transistors is strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory...

  14. Raman shift on n-doped amorphous carbon thin films grown by electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Rebollo P., B. [Departamento de Fisica, Pontificia Universidad Catolica de Rio de Janeiro (Brazil); Facultad de Ciencias Fisico-Matematicas, Benemerita Universidad Autonoma de Puebla (Mexico); Freire L., F. Jr. [Departamento de Fisica, Pontificia Universidad Catolica de Rio de Janeiro (Brazil); Lozada M., R.; Palomino M., R. [Facultad de Ciencias Fisico-Matematicas, Benemerita Universidad Autonoma de Puebla (Mexico); Jimenez S., S. [Centro de Investigacion y de Estudios Avanzados del IPN, Laboratorio de Investigacion en Materiales, Queretaro (Mexico); Zelaya A., O. [Centro de Investigacion y de Estudios Avanzados del IPN, Departamento de Fisica, CINVESTAV-IPN, P.O. Box 14-740, Mexico 07360 D.F. (Mexico)

    2007-04-15

    The structural properties of carbon thin films synthesized under an atmosphere of nitrogen by means of electron beam evaporation were studied by Raman scattering spectroscopy. The electron beam evaporation technique is an important alternative to grown layers of this material with interesting structural properties. The observed shift of the Raman G band shows that the structure of the films tends to become more graphitic upon the increase of the deposition time. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Compositional changes in the channel layer of an amorphous In–Ga–Zn-O thin film transistor after thermal annealing

    International Nuclear Information System (INIS)

    In order to investigate the possible reason for the improved device performances of amorphous In–Ga–Zn-O (a-IGZO) thin film transistors after thermal annealing, changes in the elemental concentrations in the a-IGZO channel regions and related device performances due to thermal annealing were observed. It was found that thermal annealing introduces a substantial level of oxygen deficiencies in the channel layer accompanying significantly enhanced device performances. The improved device performances are attributed to the oxygen deficiency which is believed to be averaged over the entire structure to function as shallow donors increasing the carrier concentrations. Such a deduction was supported by the changes in the absorption spectra of the a-IGZO films with various thermal histories. (paper)

  16. Effect of etching stop layer on characteristics of amorphous IGZO thin film transistor fabricated at low temperature

    Science.gov (United States)

    Li, Xifeng; Xin, Enlong; Chen, Longlong; Shi, Jifeng; Zhang, Jianhua

    2013-03-01

    Transparent bottom-gate amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistors (TFTs) had been successfully fabricated at relative low temperature. The influence of reaction gas ratio of N2O and SiH4 during the growth of etching stop layer (SiOx) on the characteristics of a-IGZO TFTs was investigated. The transfer characteristics of the TFTs were changed markedly because active layer of a-IGZO films was modified by plasma in the growth process of SiOx. By optimizing the deposition parameters of etching stop layer process, a-IGZO TFTs were manufactured and exhibited good performance with a field-effect mobility of 8.5 cm2V-1s-1, a threshold voltage of 1.3 V, and good stability under gate bias stress of 20 V for 10000 s.

  17. Analysis of thermoelectric properties of amorphous InGaZnO thin film by controlling carrier concentration

    Directory of Open Access Journals (Sweden)

    Yuta Fujimoto

    2015-09-01

    Full Text Available We have investigated the thermoelectric properties of amorphous InGaZnO (a-IGZO thin films optimized by adjusting the carrier concentration. The a-IGZO films were produced under various oxygen flow ratios. The Seebeck coefficient and the electrical conductivity were measured from 100 to 400 K. We found that the power factor (PF at 300 K had a maximum value of 82 × 10−6 W/mK2, where the carrier density was 7.7 × 1019 cm−3. Moreover, the obtained data was analyzed by fitting the percolation model. Theoretical analysis revealed that the Fermi level was located approximately above the potential barrier when the PF became maximal. The thermoelectric properties were controlled by the relationship between the position of Fermi level and the height of potential energy barriers.

  18. Effect of etching stop layer on characteristics of amorphous IGZO thin film transistor fabricated at low temperature

    Directory of Open Access Journals (Sweden)

    Xifeng Li

    2013-03-01

    Full Text Available Transparent bottom-gate amorphous Indium-Gallium-Zinc Oxide (a-IGZO thin-film transistors (TFTs had been successfully fabricated at relative low temperature. The influence of reaction gas ratio of N2O and SiH4 during the growth of etching stop layer (SiOx on the characteristics of a-IGZO TFTs was investigated. The transfer characteristics of the TFTs were changed markedly because active layer of a-IGZO films was modified by plasma in the growth process of SiOx. By optimizing the deposition parameters of etching stop layer process, a-IGZO TFTs were manufactured and exhibited good performance with a field-effect mobility of 8.5 cm2V-1s-1, a threshold voltage of 1.3 V, and good stability under gate bias stress of 20 V for 10000 s.

  19. Transformation from amorphous to nano-crystalline SiC thin films prepared by HWCVD technique without hydrogen dilution

    Indian Academy of Sciences (India)

    F Shariatmadar Tehrani

    2015-09-01

    Silicon carbide (SiC) thin films were deposited on Si(111) by the hot wire chemical vapour deposition (HWCVD) technique using silane (SiH4) and methane (CH4) gases without hydrogen dilution. The effects of SiH4 to CH4 gas flow ratio (R) on the structural properties, chemical composition and photoluminescence (PL) properties of the films deposited at the different gas flow ratios were investigated and compared. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectra revealed a structural transition from amorphous SiC to cubic nano-crystalline SiC films with the increase in the gas flow ratio. Raman scattering confirmed the multi-phased nature of the films. Auger electron spectroscopy showed that the carbon incorporation in the film structure was strongly dependent on the gas flow ratio. A similar broad visible room-temperature PL with two peaks was observed for all SiC films. The main PL emission was correlated to the band to band transition in uniform a-SiC phase and the other lower energy emission was related to the confined a-Si : H clusters in a-SiC matrix. SiC nano-crystallites exhibit no significant contribution to the radiative recombination.

  20. Characterization and simulation on antireflective coating of amorphous silicon oxide thin films with gradient refractive index

    Science.gov (United States)

    Huang, Lu; Jin, Qi; Qu, Xingling; Jin, Jing; Jiang, Chaochao; Yang, Weiguang; Wang, Linjun; Shi, Weimin

    2016-08-01

    The optical reflective properties of silicon oxide (SixOy) thin films with gradient refractive index are studied both theoretically and experimentally. The thin films are widely used in photovoltaic as antireflective coatings (ARCs). An effective finite difference time domain (FDTD) model is built to find the optimized reflection spectra corresponding to structure of SixOy ARCs with gradient refractive index. Based on the simulation analysis, it shows the variation of reflection spectra with gradient refractive index distribution. The gradient refractive index of SixOy ARCs can be obtained in adjustment of SiH4 to N2O ratio by plasma-enhanced chemical vapor deposition (PECVD) system. The optimized reflection spectra measured by UV-visible spectroscopy confirms to agree well with that simulated by FDTD method.

  1. Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure

    International Nuclear Information System (INIS)

    Recombination at silicon nitride (SiNx) and amorphous silicon (a-Si) passivated crystalline silicon (c-Si) surfaces is shown to increase significantly following an ammonia (NH3) plasma exposure at room temperature. The effect of plasma exposure on chemical structure, refractive index, permittivity, and electronic properties of the thin films is also investigated. It is found that the NH3 plasma exposure causes (i) an increase in the density of Si≡N3 groups in both SiNx and a-Si films, (ii) a reduction in refractive index and permittivity, (iii) an increase in the density of defects at the SiNx/c-Si interface, and (iv) a reduction in the density of positive charge in SiNx. The changes in recombination and thin film properties are likely due to an insertion of N–H radicals into the bulk of SiNx or a-Si. It is therefore important for device performance to minimize NH3 plasma exposure of SiNx or a-Si passivating films during subsequent fabrication steps

  2. Hot-wire vapor deposition of amorphous MoS2 thin films

    International Nuclear Information System (INIS)

    Amorphous, as shown by X-ray diffraction measurements, MoS2 films (a-MoS2) were deposited by heating a molybdenum wire at temperatures between 500 and 700 C in H2S at 1 Torr. As shown by Scanning Electron Microscopy measurements, the morphology of samples depends significantly on the filament temperature; at low temperature samples are homogeneous and smooth, at intermediate temperatures they exhibit a granular microstructure and at high temperatures a columnar one. X-ray photoelectron spectroscopy measurements have shown S/Mo ratios in films varying between 2.5 and 1.5 dependent on filament temperature. Films also contain oxygen at atomic contents of 8 to 12%. As shown by XPS and Raman spectroscopy, at a filament temperature of 600 C films are mainly composed of MoS2 also containing oxygen at an atomic ratio of 8%. Spectroscopic ellipsometry measurements made on a-MoS2 films have shown that their band gap is of the order of 1.4 eV, slightly higher than that for the bulk crystalline material. Photoluminescence spectroscopy measurements have shown that samples exhibit a doublet of peaks at 2.8 and 3 eV blue shifted relatively to MoS2 samples composed of one or two mono-layers. The above indicate that the electronic structure of crystalline atomic-layer thick MoS2 is preserved in a-MoS2 films. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Surface smoothing effect of an amorphous thin film deposited by atomic layer deposition on a surface with nano-sized roughness

    Directory of Open Access Journals (Sweden)

    W. S. Lau

    2014-02-01

    Full Text Available Previously, Lau (one of the authors pointed out that the deposition of an amorphous thin film by atomic layer deposition (ALD on a substrate with nano-sized roughness probably has a surface smoothing effect. In this letter, polycrystalline zinc oxide deposited by ALD onto a smooth substrate was used as a substrate with nano-sized roughness. Atomic force microscopy (AFM and cross-sectional transmission electron microscopy (XTEM were used to demonstrate that an amorphous aluminum oxide thin film deposited by ALD can reduce the surface roughness of a polycrystalline zinc oxide coated substrate.

  4. Determination of optical absorption edge in amorphous thin films of selenium and selenium dopped with sulphur

    International Nuclear Information System (INIS)

    The transmittance and the reflectance of three thin films of S-Se alloys have been determined for different wavelengths in the range 5000-11000 A. Accurate methods had been used to calculate the optical constants n and k as well as the absorption coefficient K. The determined absorption edges for S-Se alloys shifts to higher photon energies by increasing the concentration of sulphur content. (author)

  5. Characterization of amorphous p-type transparent CuFeO2 thin films prepared by radio frequency magnetron sputtering method at room temperature

    International Nuclear Information System (INIS)

    Amorphous CuFeO2 thin films were prepared on Al2O3 (001) substrates by radio-frequency magnetron sputtering method at room temperature. Various oxygen partial pressures PO in the sputtering gas ambient (9.1%, 11.1% and 13.0%) were used in the deposition experiments. X-ray photoelectron spectroscopy analysis convinced the chemical state of Cu+ and Fe3+ in the films, and the chemical compositions of the thin films are close to the stoichiometry of CuFeO2. The content of oxygen composition increased systematically with increasing PO. From the optical transmission spectra, only one absorption edge could be observed during 200–1200 nm for all the films with a band gap around 3.25 eV. This result is different from the polycrystalline CuFeO2 films which have 3 absorption edges in the range of 200–1200 nm. This interesting result indicates that amorphous CuFeO2 thin films have much different electronic energy band with polycrystalline ones. The resistivity of the films first decreases and then increases with increasing PO. The minimum resistivity of 4.2 Ω cm with optical transmittance of 47% at 600 nm is obtained for the film deposited in PO = 11.1%. - Highlights: • Amorphous CuFeO2 thin films have been prepared at room temperature. • The resistivity of film deposited at oxygen partial pressure of 11.1% is 4.2 Ω cm. • Amorphous CuFeO2 thin films have a band gap of 3.25 eV

  6. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    A R M Yusoff; M N Syahrul; K Henkel

    2007-08-01

    A major issue encountered during fabrication of triple junction -Si solar cells on polyimide substrates is the adhesion of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous silicon solar cells made on different polyimide substrates (Kapton VN, Upilex-S and Gouldflex), and the effect of tie coats on film adhesion.

  7. Deposition and characterization of amorphous aluminum nitride thin films for a gate insulator

    International Nuclear Information System (INIS)

    Thin films of aluminum nitride (AlN) fabricated by reactive deposition were characterized in order to examine the electrical insulation properties suitable for a gate insulator. For a series of AlN films deposited with a variation of the amount of Al flux at a fixed N flux, compositional and chemical analyses were performed using X-ray photoelectron spectroscopy (XPS) and elastic recoil detection analysis (ERDA). Combined with the result of current-voltage (I-V) measurement, it is found that the insulation properties are correlated with the compositional ratio between Al and N estimated by the ERDA measurement; a good electrical insulation with a minimal leak current of the order of 10-9 A/cm2 at a high electric field 1 MV/cm is achieved in the film of nearly stoichiometric compositional ratio of Al/N, in which the dominance of the Al-N bonding state is confirmed in the XPS measurement. On the other hand, the incorporation of oxygen, probably caused by the surface oxidization due to the exposure to the air, has little effect on the electrical properties. - Highlights: • AlN thin films deposited by reactive deposition were characterized for gate insulator. • A good electrical insulation was achieved at nearly stoichiometric composition. • The effects of oxygen incorporation and Al-N bonding state were also investigated. • A minimum leak current density as low as 10-9A/cm2 at 1MV/cm was achieved

  8. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    Directory of Open Access Journals (Sweden)

    M. Morales-Masis

    2014-09-01

    Full Text Available Improving the conductivity of earth-abundant transparent conductive oxides (TCOs remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H2-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H2-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  9. Effect of Ta addition of co-sputtered amorphous tantalum indium zinc oxide thin film transistors with bias stability.

    Science.gov (United States)

    Son, Dae-Ho; Kim, Dae-Hwan; Park, Si-Nae; Sung, Shi-Joon; Kang, Jin-Kyu

    2014-11-01

    In this work, we have fabricated thin film transistors (TFTs) using amorphous tantalum indium zinc oxide (a-TaInZnO) channels by the co-sputtering process. The effects of incorporating tantalum on the InZnO material were investigated using Hall-effect measurement results, and electrical characteristics. We also found that the carrier densities of thin films and the transistor on-off currents were greatly influenced by the composition of tantalum addition. Ta ions have strong affinity to oxygen and so suppress the formation of free electron carriers inthin films; they play an important role in enhancing the electrical characteristic due to their high oxygen bonding ability. The electrical characteristics of the optimized TFTs shows a field effect mobility of 3.67 cm2 V(-1) s(-1), a threshold voltage of 1.28 V, an on/off ratio of 1.1 x 10(8), and a subthreshold swing of 480 mV/dec. Under gate bias stress conditions, the TaInZnO TFTs showed lower shift in threshold voltage shifts. PMID:25958492

  10. Studies of pure and nitrogen-incorporated hydrogenated amorphous carbon thin films and their possible application for amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Hydrogenated amorphous carbon (a-C:H) and nitrogen-incorporated a-C:H (a-C:N:H) thin films were deposited using radio frequency-plasma-enhanced chemical vapor deposition technique and studied for their electrical, optical, and nano-mechanical properties. Introduction of nitrogen and increase of self bias enhanced the conductivity of a-C:H and a-C:N:H films, whereas current-voltage measurement reveals heterojunction formation due to their rectifying behavior. The bandgap of these films was changed over wide range from 1.9 eV to 3.45 eV by varying self bias and the nitrogen incorporation. Further, activation energy was correlated with the electronic structure of a-C:H and a-C:N:H films, and conductivity was discussed as a function of bandgap. Moreover, a-C:N:H films exhibited high hardness and elastic modulus, with maximum values as 42 GPa and 430 GPa, respectively, at -100 V. Observed fascinating electrical, optical, and nano-mechanical properties made it a material of great utility in the development of optoelectronic devices, such as solar cells. In addition, we also performed simulation study for an a-Si:H solar cell, considering a-C:H and C:N:H as window layers, and compared their performance with the a-Si:H solar cell having a-SiC:H as window layer. We also proposed several structures for the development of a near full-spectrum solar cell. Moreover, due to high hardness, a-C:N:H films can be used as a protective and encapsulate layer on solar cells, especially in n-i-p configuration on metal substrate. Nevertheless, a-C:H and a-C:N:H as a window layer can avoid the use of additional hard and protective coating and, hence, minimize the cost of the product.

  11. Pulsed laser deposited amorphous chalcogenide and alumino-silicate thin films and their multilayered structures for photonic applications

    International Nuclear Information System (INIS)

    Amorphous chalcogenide and alumino-silicate thin films were fabricated by the pulsed laser deposition technique. Prepared films were characterized in terms of their morphology, chemical composition, and optical properties. Multilayered thin film stacks for reflectors and vertical microcavities were designed for telecommunication wavelength and the window of atmosphere transparency (band II) at 1.54 μm and 4.65 μm, respectively. Bearing in mind the benefit coming from the opportunity of an efficient wavelength tuning or, conversely, to stabilize the photoinduced effects in chalcogenide films as well as to improve their mechanical properties and/or their chemical durability, several pairs of materials from pure chalcogenide layers to chalcogenide/oxide layers were investigated. Different layer stacks were fabricated in order to check the compatibility between dissimilar materials which can have a strong influence on the interface roughness, adhesion, density, and homogeneity, for instance. Three different reflector designs were formulated and tested including all-chalcogenide layers (As40Se60/Ge25Sb5S70) and mixed chalcogenide-oxide layers (As40Se60/alumino-silicate and Ga10Ge15Te75/alumino-silicate). Prepared multilayers showed good compatibility between different material pairs deposited by laser ablation despite the diversity of chemical compositions. As40Se60/alumino-silicate reflector showed the best parameters; its stop band (R > 97% at 8° off-normal incidence) has a bandwidth of ∼ 100 nm and it is centered at 1490 nm. The quality of the different mirrors developed was good enough to try to obtain a microcavity structure for the 1.5 μm telecommunication wavelength made of chalcogenide layers. The microcavity structure consists of Ga5Ge20Sb10S65 (doped with 5000 ppm of Er3+) spacer surrounded by two 10-layer As40Se60/Ge25Sb5S70 reflectors. Scanning and transmission electron microscopies showed a good periodicity, great adherence and smooth interfaces

  12. Ultrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin films

    Directory of Open Access Journals (Sweden)

    Rituraj Sharma

    2015-07-01

    Full Text Available Optical switches offer higher switching speeds than electronics, however, in most cases utilizing the interband transitions of the active medium for switching. As a result, the signal suffers heavy losses. In this article, we demonstrate a simple and yet efficient ultrafast broadband all-optical switching on ps timescale in the sub-bandgap region of the a-Se thin film, where the intrinsic absorption is very weak. The optical switching is attributed to short-lived transient defects that form localized states in the bandgap and possess a large electron-phonon coupling. We model these processes through first principles simulation that are in agreement with the experiments.

  13. Estimation of local built-in potential of amorphous silicon thin-film solar cells by Kelvin force microscopy

    Science.gov (United States)

    Itoh, Takashi; Ito, Takanori; Kuriyama, Hiroshi; Nonomura, Shuichi

    2016-04-01

    The local surface potential of pin-type hydrogenated amorphous silicon (a-Si:H) thin-film solar cells has been evaluated by Kelvin force microscopy (KFM). We have also estimated the local built-in potential of the solar cells by KFM. In the surface morphology image of the solar cells, large convex grains related to the textured structure of the substrate were found. The surface potential distribution related to the surface morphology was observed in the solar cells. A similar surface potential distribution was also found in an n-type hydrogenated microcrystalline Si (µc-Si:H) film. The surface potential of the solar cells was not the same as that of the n-type film. The difference in average surface potential between the n-type hydrogenated microcrystalline Si (µc-Si:H) film and the solar cells increased with increasing built-in potential. The difference in local surface potential on large convex grains was smaller than that in the region between the large convex grains.

  14. Intense Red Catho- and Photoluminescence from 200 nm Thick Samarium Doped Amorphous AlN Thin Films

    Directory of Open Access Journals (Sweden)

    Ali Tariq

    2009-01-01

    Full Text Available Abstract Samarium (Sm doped aluminum nitride (AlN thin films are deposited on silicon (100 substrates at 77 K by rf magnetron sputtering method. Thick films of 200 nm are grown at 100–200 watts RF power and 5–8 m Torr nitrogen, using a metal target of Al with Sm. X-ray diffraction results show that films are amorphous. Cathodoluminescence (CL studies are performed and four peaks are observed in Sm at 564, 600, 648, and 707 nm as a result of4G5/2 → 6H5/2,4G5/2 → 6H7/2,4G5/2 → 6H9/2, and4G5/2 → 6H11/2transitions. Photoluminescence (PL provides dominant peaks at 600 and 707 nm while CL gives the intense peaks at 600 nm and 648 nm, respectively. Films are thermally activated at 1,200 K for half an hour in a nitrogen atmosphere. Thermal activation enhances the intensity of luminescence.

  15. The Kondo effect and carrier transport in amorphous Cr-doped In2O3 thin films

    Directory of Open Access Journals (Sweden)

    C. P. Lin

    2012-12-01

    Full Text Available Understanding the interaction between spin of the charge carriers and local magnetic moments in diluted magnetic oxide is an important issue for applications in spintronic devices. This study examines amorphous Cr-doped In2O3 diluted magnetic oxide thin films for the existence of the Kondo effect and a general s-d scattering effect on the magneto transport, as well as for the well known 3D weak localization effect that explains the low temperature transport behavior of transparent conducting oxides. The carrier transport behavior at low temperature can be accurately described and well fit by a combination of these effects. At temperatures lower than the minimum resistivity temperature, the Kondo effect dominates the magnetoresistance effect and is responsible for the enhancement of resistivity.

  16. Synthesis and characterization of thin films of nitrided amorphous carbon deposited by laser ablation; Sintesis y caracterizacion de peliculas delgadas de carbono amorfo nitrurado, depositadas por ablacion laser

    Energy Technology Data Exchange (ETDEWEB)

    Rebollo P, B

    2001-07-01

    The objective of this work is the synthesis and characterization of thin films of amorphous carbon (a-C) and thin films of nitrided amorphous carbon (a-C-N) using the laser ablation technique for their deposit. For this purpose, the physical properties of the obtained films were studied as function of diverse parameters of deposit such as: nitrogen pressure, power density, substrate temperature and substrate-target distance. For the characterization of the properties of the deposited thin films the following techniques were used: a) Raman spectroscopy which has demonstrated being a sensitive technique to the sp{sup 2} and sp{sup 3} bonds content, b) Energy Dispersive Spectroscopy which allows to know semi-quantitatively way the presence of the elements which make up the deposited films, c) Spectrophotometry, for obtaining the absorption spectra and subsequently the optical energy gap of the deposited material, d) Ellipsometry for determining the refraction index, e) Scanning Electron Microscopy for studying the surface morphology of thin films and, f) Profilemetry, which allows the determination the thickness of the deposited thin films. (Author)

  17. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    Science.gov (United States)

    Reyes, R.; Cremona, M.; Achete, C. A.

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq3) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq3/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  18. Dual-Layer Nanostructured Flexible Thin-Film Amorphous Silicon Solar Cells with Enhanced Light Harvesting and Photoelectric Conversion Efficiency.

    Science.gov (United States)

    Lin, Yinyue; Xu, Zhen; Yu, Dongliang; Lu, Linfeng; Yin, Min; Tavakoli, Mohammad Mahdi; Chen, Xiaoyuan; Hao, Yuying; Fan, Zhiyong; Cui, Yanxia; Li, Dongdong

    2016-05-01

    Three-dimensional (3-D) structures have triggered tremendous interest for thin-film solar cells since they can dramatically reduce the material usage and incident light reflection. However, the high aspect ratio feature of some 3-D structures leads to deterioration of internal electric field and carrier collection capability, which reduces device power conversion efficiency (PCE). Here, we report high performance flexible thin-film amorphous silicon solar cells with a unique and effective light trapping scheme. In this device structure, a polymer nanopillar membrane is attached on top of a device, which benefits broadband and omnidirectional performances, and a 3-D nanostructure with shallow dent arrays underneath serves as a back reflector on flexible titanium (Ti) foil resulting in an increased optical path length by exciting hybrid optical modes. The efficient light management results in 42.7% and 41.7% remarkable improvements of short-circuit current density and overall efficiency, respectively. Meanwhile, an excellent flexibility has been achieved as PCE remains 97.6% of the initial efficiency even after 10 000 bending cycles. This unique device structure can also be duplicated for other flexible photovoltaic devices based on different active materials such as CdTe, Cu(In,Ga)Se2 (CIGS), organohalide lead perovskites, and so forth. PMID:27052357

  19. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reyes, R [Facultad de Ingenieria Quimica y Textil, Universidad Nacional de Ingenieria, Av. Tupac Amaru SN, Lima (Peru); Cremona, M [Departamento de Fisica, PontifIcia Universidade Catolica de Rio de Janeiro, PUC-Rio, Cx. Postal 38071, Rio de Janeiro, RJ, CEP 22453-970 (Brazil); Achete, C A, E-mail: rreyes@uni.edu.pe [Departamento de Engenheria Metalurgica e de Materiais, Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro, RJ, CEP 21945-970 (Brazil)

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq{sub 3}) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq{sub 3}/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  20. Development of Thin Film Amorphous Silicon Tandem Junction Based Photocathodes Providing High Open-Circuit Voltages for Hydrogen Production

    Directory of Open Access Journals (Sweden)

    F. Urbain

    2014-01-01

    Full Text Available Hydrogenated amorphous silicon thin film tandem solar cells (a-Si:H/a-Si:H have been developed with focus on high open-circuit voltages for the direct application as photocathodes in photoelectrochemical water splitting devices. By temperature variation during deposition of the intrinsic a-Si:H absorber layers the band gap energy of a-Si:H absorber layers, correlating with the hydrogen content of the material, can be adjusted and combined in a way that a-Si:H/a-Si:H tandem solar cells provide open-circuit voltages up to 1.87 V. The applicability of the tandem solar cells as photocathodes was investigated in a photoelectrochemical cell (PEC measurement set-up. With platinum as a catalyst, the a-Si:H/a-Si:H based photocathodes exhibit a high photocurrent onset potential of 1.76 V versus the reversible hydrogen electrode (RHE and a photocurrent of 5.3 mA/cm2 at 0 V versus RHE (under halogen lamp illumination. Our results provide evidence that a direct application of thin film silicon based photocathodes fulfills the main thermodynamic requirements to generate hydrogen. Furthermore, the presented approach may provide an efficient and low-cost route to solar hydrogen production.

  1. Interaction of hydrogenated amorphous silicon films with transparent conductive films

    OpenAIRE

    Kitagawa, M.; Mori, K; Ishihara, S.; Ohno, M.; Hirao, T.; Yoshioka, Y.; Kohiki, S

    1983-01-01

    The effects of the deposition temperature on the interaction of the hydrogenated amorphous silicon films with indium-tin-oxide and tin-oxide films have been investigated in the temperature range 150-300 degrees C, using Auger electron spectroscopy, secondary ion mass spectrometry, and scanning electron microscopy. It was found that the constituent atoms such as indium and tin are detected in the thin amorphous silicon films deposited. Around the interface between the transparent conductive fi...

  2. Amorphous silicon thin-film solar cells deposited on flexible substrates using different zinc oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Alpuim, P.; Samantilleke, A.; Marins, E.; Rebouta, L. [Centro de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Oliveira, F.; Cerqueira, M.F. [Centro de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Centro de Fisica, Universidade do Minho, 4710-057 Braga (Portugal); Stefanov, S.; Chiussi, S. [Departamento de Fisica Aplicada, E.T.S.I. Industriales, Universidade de Vigo, Campus Universitario Lagoas Marcosende, 36310 Vigo (Spain); Serra, C. [Departamento de Fisica Aplicada, E.T.S.I. Industriales, Universidade de Vigo, Campus Universitario Lagoas Marcosende, 36310 Vigo (Spain); C.A.C.T.I., Universidade de Vigo, Campus Universitario Lagoas Marcosende, 36310 Vigo (Spain); Bouree, J.E. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France)

    2010-04-15

    In order to improve the transparent contact layer in amorphous silicon solar cells fabricated on low-temperature plastic substrates, Al and Ga doped ZnO films were deposited at room temperature on plastic and glass and their optical, electronic and structural properties were correlated and optimized. Aiming to explore light trapping effects, plastic substrates were laser textured and their haze and total transmittance and reflectance were compared with those of untextured substrates. Although the haze increased dramatically, from 1.7 to 78.9%, the total transmittance of PET coated with ZnO:Ga decreased from 83.9%, in the untextured substrate, to 58.5% in the textured PET. The haze in reflected light of PET coated with Al increased from 4.3% to 66.2% after texturing but the total reflectance decreased from 70.1% to 36.8%. Therefore the untextured substrates were used in the solar cells. a-Si:H solar cells were deposited at a substrate temperature of 150 C on plastic, in the superstrate p-i-n configuration, and on stainless steel, in the substrate n-i-p configuration. The efficiency is {proportional_to}5% in both types of devices, limited by low J{sub sc} and low fill factor. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Interfaces and thin films physics

    International Nuclear Information System (INIS)

    The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described

  4. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    KAUST Repository

    Hanna, Amir

    2015-12-04

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (ZnO) present promising opportunity in that regard, still wide area of improvement exists to increase the performance further. Here, we show a wavy channel (WC) architecture for ZnO integrated TFT which increases transistor width without chip area penalty, enabling high performance in material agnostic way. We further demonstrate digital logic NAND circuit using the WC architecture and compare it to the conventional planar architecture. The WC architecture circuits have shown 2× higher peak-to-peak output voltage for the same input voltage. They also have 3× lower high-to-low propagation delay times, respectively, when compared to the planar architecture. The performance enhancement is attributed to both extra device width and enhanced field effect mobility due to higher gate field electrostatics control.

  5. Digital radiology using active matrix readout of amorphous selenium: radiation hardness of cadmium selenide thin film transistors.

    Science.gov (United States)

    Zhao, W; Waechter, D; Rowlands, J A

    1998-04-01

    A flat-panel x-ray imaging detector using active matrix readout of amorphous selenium (a-Se) is being investigated for digital radiography and fluoroscopy. The active matrix consists of a two-dimensional array of thin film transistors (TFTs). Radiation penetrating through the a-Se layer will interact with the TFTs and it is important to ensure that radiation induced changes will not affect the operation of the x-ray imaging detector. The methodology of the present work is to investigate the effects of radiation on the characteristic curves of the TFTs using individual TFT samples made with cadmium selenide (CdSe) semiconductor. Four characteristic parameters, i.e., threshold voltage, subthreshold swing, field effect mobility, and leakage current, were examined. This choice of parameters was based on the well established radiation damage mechanisms for crystalline silicon metal-oxide-semiconductor field-effect transistors (MOSFETs), which have a similar principle of operation as CdSe TFTs. It was found that radiation had no measurable effect on the leakage current and the field effect mobility. However, radiation shifted the threshold voltage and increased the subthreshold swing. But even the estimated lifetime dose (50 Gy) of a diagnostic radiation detector will not affect the normal operation of an active matrix x-ray detector made with CdSe TFTs. The mechanisms of the effects of radiation will be discussed and compared with those for MOSFETs and hydrogenated amorphous silicon (a-Si:H) TFTs. PMID:9571621

  6. Ellipsometry study of process deposition of amorphous Indium Gallium Zinc Oxide sputtered thin films

    International Nuclear Information System (INIS)

    This paper reports on an InGaZnO optical study by spectrometric ellipsometry. First of all, the fitting results of different models and different structures are analysed to choose the most appropriate model. The Tauc–Lorentz model is suitable for thickness measurements but a more complex model allows the refractive index and extinction coefficient to be extracted more accurately. Secondly, different InGaZnO process depositions are carried out in order to investigate stability, influence of deposition time and uniformity. Films present satisfactory optical stability over time. InGaZnO optical property evolution as a function of deposition time is related to an increase in temperature. To understand the behaviour of uniformity, mapping measurements are correlated to thin film resistivity. Results show that temperature and resputtering are the two phenomena that affect IGZO uniformity. - Highlights: • Model and structure are investigated to fit IGZO ellipsometric angles. • Maximum refractive index rises with substrate temperature and thus deposition time. • Resputtering leads to inhomogeneity in IGZO electrical and optical properties

  7. Ellipsometry study of process deposition of amorphous Indium Gallium Zinc Oxide sputtered thin films

    Energy Technology Data Exchange (ETDEWEB)

    Talagrand, C., E-mail: talagrand@emse.fr [Ecole des Mines de Saint-Etienne CMP-GC, Dept PS2, Gardanne, 880 route de Mimet (France); Boddaert, X. [Ecole des Mines de Saint-Etienne CMP-GC, Dept PS2, Gardanne, 880 route de Mimet (France); Selmeczi, D.G.; Defranoux, C. [Semilab Semiconductor Physics Laboratory Co. Ltd., Budapest, 1117 (Hungary); Collot, P. [Ecole Nationale Supérieure d' Arts et Métiers ParisTech, Aix-en-Provence, 2 cours des Arts et Métiers (France)

    2015-09-01

    This paper reports on an InGaZnO optical study by spectrometric ellipsometry. First of all, the fitting results of different models and different structures are analysed to choose the most appropriate model. The Tauc–Lorentz model is suitable for thickness measurements but a more complex model allows the refractive index and extinction coefficient to be extracted more accurately. Secondly, different InGaZnO process depositions are carried out in order to investigate stability, influence of deposition time and uniformity. Films present satisfactory optical stability over time. InGaZnO optical property evolution as a function of deposition time is related to an increase in temperature. To understand the behaviour of uniformity, mapping measurements are correlated to thin film resistivity. Results show that temperature and resputtering are the two phenomena that affect IGZO uniformity. - Highlights: • Model and structure are investigated to fit IGZO ellipsometric angles. • Maximum refractive index rises with substrate temperature and thus deposition time. • Resputtering leads to inhomogeneity in IGZO electrical and optical properties.

  8. The effects of amorphous Al2O3 underlayer on the microstructure and magnetic properties of BaFe12O19 thin films

    International Nuclear Information System (INIS)

    Single phase nanostructured BaFe12O19 thin films have been deposited on Si(110) substrate and Si(110) substrate with amorphous Al2O3 underlayer by a sol–gel method. The effects of the amorphous Al2O3 underlayer on the composition, microstructure and magnetic properties were explored by X-ray diffraction, scanning electron microscopy and vibrating sample magnetometery techniques. The results revealed that the amorphous Al2O3 underlayer promoted some perpendicular c-axis orientation with ΔHc=Hcperpendicular−Hc∥=300 Oe. - Highlights: • The BaFe12O19 film fabricated by the Pechini method, deposited on Si(110), Si(110)/Al2O3 substrates. • The Al2O3 underlayer induced some c-axis perpendicular orientation. • Out-of-plane magnetic properties of the film with underlayer are better than those of in-plane orientation

  9. 非晶硅锗电池性能的调控研究%Modification to the performance of hydrogenated amorphous silicon germanium thin film solar cell

    Institute of Scientific and Technical Information of China (English)

    刘伯飞; 白立沙; 魏长春; 孙建; 侯国付; 赵颖; 张晓丹

    2013-01-01

    采用射频等离子体增强化学气相沉积技术,研究了非晶硅锗薄膜太阳电池。针对非晶硅锗薄膜材料的本身特性,通过调控硅锗合金中硅锗的比例,实现了对硅锗薄膜太阳电池中开路电压和短路电流密度的分别控制。借助于本征层硅锗材料帯隙梯度的设计,获得了可有效用于多结叠层电池中的非晶硅锗电池。%In this paper, we study hydrogenated amorphous silicon germanium thin film solar cells prepared by the radio frequency plasma-enhanced chemical vapor deposition. In the light of the inherent characteristics of hydrogenated amorphous silicon germanium mate-rial, the modulation of the germanium/silicon ratio in silicon germanium alloys can separately control open circuit voltage (Voc) and short circuit current density (Jsc) of a-SiGe:H thin film solar cells. By the structural design of band gap profiling in the amorphous silicon germanium intrinsic layer, hydrogenated amorphous silicon germanium thin film solar cells, which can be used efficiently as the component cell of multi-junction solar cells, are obtained.

  10. Effects of deposition condition on the ionic conductivity and structure of amorphous lithium phosphorus oxynitrate thin film

    Energy Technology Data Exchange (ETDEWEB)

    Roh, N.S.; Lee, S.D.; Kwon, H.S.

    1999-12-17

    Thin film rechargeable lithium batteries, in forms of Li{vert_bar}Li{sup +} solid electrolyte{vert_bar}Li intercalation cathode, have been studied for their applications in electronic devices such as built-in power sources for RAM, CMOS chips and smart cards. Recently, it was reported that a new amorphous lithium electrolyte, lithium phosphorus oxynitride (LIPON), showed an ionic conductivity as high as 2.0 x 10{sup {minus}6} {Omega}{sup {minus}1} cm{sup {minus}1} at room temperature, and also excellent long term stability when in contact with lithium. In spite of the advantages of LIPON as a solid electrolyte for microbatteries, the influence of deposition parameters on the structure and ionic conductivity on the LIPON is not yet known. the objective of the present study is to examine the effect of deposition conditions on the ionic conductivity and structural change of the LIPON solid electrolyte films, and hence to elucidate the mechanism by which the incorporation of nitrogen into phosphate glass improves the Li{sup +} ionic conductivity of LIPON.

  11. Erbium-Doped Amorphous Carbon-Based Thin Films: A Photonic Material Prepared by Low-Temperature RF-PEMOCVD

    Directory of Open Access Journals (Sweden)

    Hui-Lin Hsu

    2014-02-01

    Full Text Available The integration of photonic materials into CMOS processing involves the use of new materials. A simple one-step metal-organic radio frequency plasma enhanced chemical vapor deposition system (RF-PEMOCVD was deployed to grow erbium-doped amorphous carbon thin films (a-C:(Er on Si substrates at low temperatures (<200 °C. A partially fluorinated metal-organic compound, tris(6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5- octanedionate Erbium(+III or abbreviated Er(fod3, was incorporated in situ into a-C based host. Six-fold enhancement of Er room-temperature photoluminescence at 1.54 µm was demonstrated by deuteration of the a-C host. Furthermore, the effect of RF power and substrate temperature on the photoluminescence of a-C:D(Er films was investigated and analyzed in terms of the film structure. Photoluminescence signal increases with increasing RF power, which is the result of an increase in [O]/[Er] ratio and the respective erbium-oxygen coordination number. Moreover, photoluminescence intensity decreases with increasing substrate temperature, which is attributed to an increased desorption rate or a lower sticking coefficient of the fluorinated fragments during film growth and hence [Er] decreases. In addition, it is observed that Er concentration quenching begins at ~2.2 at% and continues to increase until 5.5 at% in the studied a-C:D(Er matrix. This technique provides the capability of doping Er in a vertically uniform profile.

  12. Structure and Optical Properties of Silicon Nanocrystals Embedded in Amorphous Silicon Thin Films Obtained by PECVD

    OpenAIRE

    Monroy, B. M.; Aduljay Remolina Millán; García-Sánchez, M. F.; Ponce, A.; Picquart, M.; Santana, G.

    2011-01-01

    Silicon nanocrystals embedded in amorphous silicon matrix were obtained by plasma enhanced chemical vapor deposition using dichlorosilane as silicon precursor. The RF power and dichlorosilane to hydrogen flow rate ratio were varied to obtain different crystalline fractions and average sizes of silicon nanocrystals. High-resolution transmission electron microscopy images and RAMAN measurements confirmed the existence of nanocrystals embedded in the amorphous matrix with average sizes between 2...

  13. Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

    OpenAIRE

    Yaser Abdulraheem; Ivan Gordon; Twan Bearda; Hosny Meddeb; Jozef Poortmans

    2014-01-01

    An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vapor deposition (PECVD). The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE) in a wavel...

  14. Photoconductivity and high-field effects in amorphous Se83Te15Zn2 thin film

    Indian Academy of Sciences (India)

    S Shukla; S Kumar

    2011-12-01

    The glassy alloy of Se83Te15Zn2 has been prepared by conventional rapid melt-quenching technique. The glassy nature of the prepared alloy is confirmed through X-ray diffraction (XRD) technique. A thin film of the aforesaid material was prepared by thermal evaporation technique. Coplanar indium electrode was used. Current–voltage (–) characteristics and photoconductivity measurements were obtained. At low electric field, ohmic, and at high electric fields ( ∼ 104 V/cm), non-ohmic behaviour was observed. An analysis of the experimental data confirms the presence of space charge limited conduction (SCLC) in the glassy material studied in the present case. From the fitting of the data to the theory of SCLC, the density of defect states (DOS) near the Fermi level was calculated. Temperature dependence of conductivity in dark as well as in the presence of light shows that conduction is through a thermally activated process in both the cases. The activation energy is found to decrease with the increase in light intensity. This indicates the shift of the Fermi level with intensity. Transient photoconductivity measurements at different temperatures indicate that the decay of photoconductivity is quite slow, which is found to be non-exponential in the present case, indicating the presence of a continuous distribution of defect states in the aforesaid glassy alloy.

  15. Robust topological surface states of Bi2Se3 thin films on amorphous SiO2/Si substrate and a large ambipolar gating effect

    Science.gov (United States)

    Bansal, Namrata; Koirala, Nikesh; Brahlek, Matthew; Han, Myung-Geun; Zhu, Yimei; Cao, Yue; Waugh, Justin; Dessau, Daniel S.; Oh, Seongshik

    2014-06-01

    The recent emergence of topological insulators (TI) has spurred intensive efforts to grow TI thin films on various substrates. However, little is known about how robust the topological surface states (TSS) are against disorders and other detrimental effects originating from the substrates. Here, we report the observation of a well-defined TSS on Bi2Se3 films grown on amorphous SiO2 (a-SiO2) substrates and a large gating effect on these films using the underneath doped-Si substrate as the back gate. The films on a-SiO2 were composed of c-axis ordered but random in-plane domains. However, despite the in-plane randomness induced by the amorphous substrate, the transport properties of these films were superior to those of similar films grown on single-crystalline Si(111) substrates, which are structurally better matched but chemically reactive with the films. This work sheds light on the importance of chemical compatibility, compared to lattice matching, for the growth of TI thin films, and also demonstrates that the technologically important and gatable a-SiO2/Si substrate is a promising platform for TI films.

  16. Deposit of thin films of nitrided amorphous carbon using the laser ablation technique; Deposito de peliculas delgadas de carbono amorfo nitrurado utilizando la tecnica de ablacion laser

    Energy Technology Data Exchange (ETDEWEB)

    Rebollo, P.B.; Escobar A, L.; Camps C, E. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, C.P. 52045 Salazar, Estado de Mexico (Mexico); Haro P, E.; Camacho L, M.A. [Departamento de Fisica, Universidad Autonoma Metropolitana Iztapalapa (Mexico); Muhl S, S. [Instituto de Investigacion en Materiales, UNAM (Mexico)

    2000-07-01

    It is reported the synthesis and characterization of thin films of amorphous carbon (a-C) nitrided, deposited by laser ablation in a nitrogen atmosphere at pressures which are from 4.5 x 10 {sup -4} Torr until 7.5 x 10 {sup -2} Torr. The structural properties of the films are studied by Raman spectroscopy obtaining similar spectra at the reported for carbon films type diamond. The study of behavior of the energy gap and the ratio nitrogen/carbon (N/C) in the films, shows that the energy gap is reduced when the nitrogen incorporation is increased. It is showed that the refraction index of the thin films diminish as nitrogen pressure is increased, indicating the formation of graphitic material. (Author)

  17. Development of thin film amorphous silicon oxide/microcrystalline silicon double-junction solar cells and their temperature dependence

    Energy Technology Data Exchange (ETDEWEB)

    Sriprapha, K.; Piromjit, C.; Limmanee, A.; Sritharathikhun, J. [Institute of Solar Energy Technology Development (SOLARTEC), National Science and Technology Development Agency (NSTDA), 111 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120 (Thailand)

    2011-01-15

    We have developed thin film silicon double-junction solar cells by using micromorph structure. Wide bandgap hydrogenated amorphous silicon oxide (a-SiO:H) film was used as an absorber layer of top cell in order to obtain solar cells with high open circuit voltage (V{sub oc}), which are attractive for the use in high temperature environment. All p, i and n layers were deposited on transparent conductive oxide (TCO) coated glass substrate by a 60 MHz-very-high-frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique. The p-i-n-p-i-n double-junction solar cells were fabricated by varying the CO{sub 2} and H{sub 2} flow rate of i top layer in order to obtain the wide bandgap with good quality material, which deposited near the phase boundary between a-SiO:H and hydrogenated microcrystalline silicon oxide ({mu}c-SiO:H), where the high V{sub oc} can be expected. The typical a-SiO:H/{mu}c-Si:H solar cell showed the highest initial cell efficiency of 10.5%. The temperature coefficient (TC) of solar cells indicated that the values of TC for conversion efficiency ({eta}) of the double-junction solar cells were inversely proportional to the initial V{sub oc}, which corresponds to the bandgap of the top cells. The TC for {eta} of typical a-SiO:H/{mu}c-Si:H was -0.32%/ C, lower than the value of conventional a-Si:H/{mu}c-Si:H solar cell. Both the a-SiO:H/{mu}c-Si:H solar cell and the conventional solar cell showed the same light induced degradation ratio of about 20%. We concluded that the solar cells using wide bandgap a-SiO:H film in the top cells are promising for the use in high temperature regions. (author)

  18. Photosensitivity of pulsed laser deposited Ge20As20Se60 and Ge10As30Se60 amorphous thin films

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • Amorphous Ge20As20Se60/Ge10As30Se60 films are fabricated by pulsed laser deposition. • Photosensitivity of the layers is studied by employing spectroscopic ellipsometry. • As-deposited/relaxed thin films were irradiated by 593, 635, and 660 nm lasers. • Ge20As20Se60 layers present almost zero photorefraction in relaxed state. - Abstract: Amorphous Ge20As20Se60 and Ge10As30Se60 thin films are fabricated by pulsed laser deposition. Prepared films are characterized in terms of their morphology, chemical composition, and optical properties. Special attention is given to the photosensitivity of the layers, which was studied by spectroscopic ellipsometry with as-deposited, annealed and exposed films by three different laser sources (593, 635, and 660 nm). The results show better photostability for Ge20As20Se60 thin films, where photoinduced change of optical band gap was found to be equal or less than 0.04 eV and these layers present almost zero photorefraction

  19. Surface morphology of amorphous germanium thin films following thermal outgassing of SiO{sub 2}/Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Valladares, L. de los Santos, E-mail: ld301@cam.ac.uk [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom); Dominguez, A. Bustamante [Laboratorio de Cerámicos y Nanomateriales, Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, Apartado Postal 14-0149, Lima (Peru); Llandro, J.; Holmes, S. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom); Quispe, O. Avalos [Laboratorio de Cerámicos y Nanomateriales, Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, Apartado Postal 14-0149, Lima (Peru); Langford, R. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom); Aguiar, J. Albino [Laboratório de Supercondutividade e Materiais Avançados, Departamento de Física, Universidade Federal de Pernambuco, 50670-901, Recife (Brazil); Barnes, C.H.W. [Cavendish Laboratory, Department of Physics, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE (United Kingdom)

    2014-10-15

    Highlights: • Annealing promotes outgassing of SiO{sub 2}/Si wafers. • Outgassing species embed in the a-Ge film forming bubbles. • The density of bubbles obtained by slow annealing is smaller than by rapid annealing. • The bubbles explode after annealing the samples at 800 °C. • Surface migration at higher temperatures forms polycrystalline GeO{sub 2} islands. - Abstract: In this work we report the surface morphology of amorphous germanium (a-Ge) thin films (140 nm thickness) following thermal outgassing of SiO{sub 2}/Si substrates. The thermal outgassing was performed by annealing the samples in air at different temperatures from 400 to 900 °C. Annealing at 400 °C in slow (2 °C/min) and fast (10 °C/min) modes promotes the formation of bubbles on the surface. A cross sectional view by transmission electron microscope taken of the sample slow annealed at 400 °C reveals traces of gas species embedded in the a-Ge film, allowing us to propose a possible mechanism for the formation of the bubbles. The calculated internal pressure and number of gas molecules for this sample are 30 MPa and 38 × 10{sup 8}, respectively. Over an area of 22 × 10{sup −3} cm{sup 2} the density of bubbles obtained at slow annealing (9 × 10{sup 3} cm{sup −2}) is smaller than that at rapid annealing (6.4 × 10{sup 4} cm{sup −2}), indicating that the amount of liberated gas in both cases is only a fraction of the total gas contained in the substrate. After increasing the annealing temperature in the slow mode, bubbles of different diameters (from tens of nanometers up to tens of micrometers) randomly distribute over the Ge film and they grow with temperature. Vertical diffusion of the outgas species through the film dominates the annealing temperature interval 400–600 °C, whereas coalescence of bubbles caused by lateral diffusion is detected after annealing at 700 °C. The bubbles explode after annealing the samples at 800 °C. Annealing at higher temperatures, such as

  20. Surface morphology of amorphous germanium thin films following thermal outgassing of SiO2/Si substrates

    International Nuclear Information System (INIS)

    Highlights: • Annealing promotes outgassing of SiO2/Si wafers. • Outgassing species embed in the a-Ge film forming bubbles. • The density of bubbles obtained by slow annealing is smaller than by rapid annealing. • The bubbles explode after annealing the samples at 800 °C. • Surface migration at higher temperatures forms polycrystalline GeO2 islands. - Abstract: In this work we report the surface morphology of amorphous germanium (a-Ge) thin films (140 nm thickness) following thermal outgassing of SiO2/Si substrates. The thermal outgassing was performed by annealing the samples in air at different temperatures from 400 to 900 °C. Annealing at 400 °C in slow (2 °C/min) and fast (10 °C/min) modes promotes the formation of bubbles on the surface. A cross sectional view by transmission electron microscope taken of the sample slow annealed at 400 °C reveals traces of gas species embedded in the a-Ge film, allowing us to propose a possible mechanism for the formation of the bubbles. The calculated internal pressure and number of gas molecules for this sample are 30 MPa and 38 × 108, respectively. Over an area of 22 × 10−3 cm2 the density of bubbles obtained at slow annealing (9 × 103 cm−2) is smaller than that at rapid annealing (6.4 × 104 cm−2), indicating that the amount of liberated gas in both cases is only a fraction of the total gas contained in the substrate. After increasing the annealing temperature in the slow mode, bubbles of different diameters (from tens of nanometers up to tens of micrometers) randomly distribute over the Ge film and they grow with temperature. Vertical diffusion of the outgas species through the film dominates the annealing temperature interval 400–600 °C, whereas coalescence of bubbles caused by lateral diffusion is detected after annealing at 700 °C. The bubbles explode after annealing the samples at 800 °C. Annealing at higher temperatures, such as 900 °C, leads to surface migration of the film to the

  1. Highly C-axis oriented LiNbO3 thin film on amorphous SiO2 buffer layer and its growth mechanism

    Institute of Scientific and Technical Information of China (English)

    HE Junhui; YE Zhizhen

    2003-01-01

    LiNbO3 waveguiding films with highly C-axis orientation and superior crystallographic quality have been deposited on the amorphous SiO2 buffer layer ofSi wafer by pulsed laser deposition (PLD) technique. X-ray diffraction, high-resolution electron transmission microscopy and atomic force microscopy were applied to characterizing the quality and orientation of LiNbO3 thin film, and the optimized deposition conditions have been determined for C-axis oriented growth. LiNbO3 thin films on amorphous SiO2 buffer layer were composed of intimate arrangements of quadrangular single crystal domain (150 nm ( 150 nm) with C-axis orientation, and displayed sharp interface structures. The measurements of prism coupling technique indicate that the laser can be coupled into the LiNbO3 film and TE and TM waveguiding modes were detected. In addition, the possible mechanism oforiented growth on amorphous buffer layer and "film-substrate effects" were discussed briefly, which suggests that its growth mechanism is likely analogous to the Volmer model with characteristics of three-dimensional islands nucleation onthe smooth crystal surface.

  2. Thin films

    International Nuclear Information System (INIS)

    This volume is a compilation of papers presented at the 1990 Spring Meeting of the Materials Research Society in a symposium entitled Thin Films: Stresses and Mechanical Properties II. As indicated by the title, the symposium was the second in a series, the first of which was held at the Fall Meeting in 1988. The importance of thin film mechanical properties is now recognized to the extent that basic characterization techniques such as microindentation and thin film stress measurement are performed routinely, and new characterization techniques are being developed on a daily basis. Many of the papers in the symposium dealt with the developments in these characterization methods and their application to a broad spectrum of materials such as compositionally modulated structures, ion implanted materials, optical coatings, and the numerous metals, ceramics and organics used in semiconductor device manufacture

  3. Amorphous MoSx thin-film-coated carbon fiber paper as a 3D electrode for long cycle life symmetric supercapacitors

    Science.gov (United States)

    Balasingam, Suresh Kannan; Thirumurugan, Arun; Lee, Jae Sung; Jun, Yongseok

    2016-06-01

    Amorphous MoSx thin-film-coated carbon fiber paper as a binder-free 3D electrode was synthesized by a facile hydrothermal method. The maximum specific capacitance of a single electrode was 83.9 mF cm-2, while it was 41.9 mF cm-2 for the symmetric device. Up to 600% capacitance retention was observed for 4750 cycles.Amorphous MoSx thin-film-coated carbon fiber paper as a binder-free 3D electrode was synthesized by a facile hydrothermal method. The maximum specific capacitance of a single electrode was 83.9 mF cm-2, while it was 41.9 mF cm-2 for the symmetric device. Up to 600% capacitance retention was observed for 4750 cycles. Electronic supplementary information (ESI) available. See DOI: 10.1039/C6NR01200K

  4. Wet Etching of Amorphous TiO2 Thin Films Using H3PO4-H2O2 Aqueous Solution

    Science.gov (United States)

    Okazaki, Sohei; Ohhashi, Takuya; Nakao, Shoichiro; Hirose, Yasushi; Hitosugi, Taro; Hasegawa, Tetsuya

    2013-09-01

    We report on the wet etching of amorphous undoped and Nb-doped TiO2 thin films using H3PO4-H2O2 etching solution. The etching rate (R) showed a maximum at a H3PO4 concentration of approximately 50 wt % at 80 °C, suggesting that H2PO4- and/or H3O+ is responsible for the etching reaction. The addition of H2O2 to H3PO4 solution significantly enhanced R, and an optimized solution exhibited an R of 13 nm/min at 80 °C, which is one order of magnitude higher than that using H2SO4. These results demonstrate that H3PO4-H2O2 aqueous solution is an effective etchant for TiO2-based amorphous thin films.

  5. Effect of deposition temperature on the properties of amorphous silicon carbide thin films

    International Nuclear Information System (INIS)

    Silicon carbide films were deposited on n-type Si substrates (111) of resistivity 2-7 Ω cm in a high-frequency parallel-plate plasma reactor. The deposition temperatures were 250, 350 and 450 deg. C, respectively. The RBS results showed that the concentrations of Si and C in the films depend a little on the deposition temperature. The films contain a small amount of oxygen and nitrogen. IR results showed the presence of Si-C, Si-H, C-H, Si-O, Si-N specific bonds. The AFM micrographs revealed that the film surface is rather smooth and compact

  6. Production and characterization of hydrogenated amorphous carbon thin films deposited in methane plasmas diluted by noble gases

    International Nuclear Information System (INIS)

    The dilution effects of the precursor methane atmosphere by three noble gases (Ar, Ne and He) on the mechanical properties and the microstructure of hydrogenated amorphous carbon films deposited by rf-PECVD were studied. The chemical composition and atomic density of the films were determined by ion beam analysis. The film microstructure was probed by means of Raman spectroscopy. The internal stress was determined through the measurement of the changing of the substrate curvature by a profilometer, while nanoindentation experiments provided the film hardness. The results show that the precursor atmosphere dilution by different noble gases did not induce substantial modifications in the microstructure or in the mechanical properties of the films. On the other hand, the composition, the microstructure and the mechanical properties of the films are strongly dependent on the self-bias voltage. The results confirm the importance of the ion bombardment during film growth on the mechanical properties of the films

  7. Low Cost Amorphous Silicon Intrinsic Layer for Thin-Film Tandem Solar Cells

    Directory of Open Access Journals (Sweden)

    Ching-In Wu

    2013-01-01

    Full Text Available The authors propose a methodology to improve both the deposition rate and SiH4 consumption during the deposition of the amorphous silicon intrinsic layer of the a-Si/μc-Si tandem solar cells prepared on Gen 5 glass substrate. It was found that the most important issue is to find out the saturation point of deposition rate which guarantees saturated utilization of the sourcing gas. It was also found that amorphous silicon intrinsic layers with the same k value will result in the same degradation of the fabricated modules. Furthermore, it was found that we could significantly reduce the production cost of the a-Si/μc-Si tandem solar cells prepared on Gen 5 glass substrate by fine-tuning the process parameters.

  8. Nonpolar resistive memory switching with all four possible resistive switching modes in amorphous LaHoO3 thin films

    International Nuclear Information System (INIS)

    We studied the resistive memory switching in pulsed laser deposited amorphous LaHoO3 (a-LHO) thin films for non-volatile resistive random access memory applications. Nonpolar resistive switching (RS) was achieved in Pt/a-LHO/Pt memory cells with all four possible RS modes (i.e., positive unipolar, positive bipolar, negative unipolar, and negative bipolar) having high RON/ROFF ratios (in the range of ∼104–105) and non-overlapping switching voltages (set voltage, VON ∼ ±3.6–4.2 V and reset voltage, VOFF ∼ ±1.3–1.6 V) with a small variation of about ±5–8%. Temperature dependent current-voltage (I–V) characteristics indicated the metallic conduction in low resistance states (LRS). We believe that the formation (set) and rupture (reset) of mixed conducting filaments formed out of oxygen vacancies and metallic Ho atoms could be responsible for the change in the resistance states of the memory cell. Detailed analysis of I–V characteristics further corroborated the formation of conductive nanofilaments based on metal-like (Ohmic) conduction in LRS. Simmons-Schottky emission was found to be the dominant charge transport mechanism in the high resistance state

  9. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    International Nuclear Information System (INIS)

    We investigated the effects of top gate voltage (VTG) and temperature (in the range of 25 to 70 oC) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of VTG from -20V to +20V, decreases the threshold voltage (VTH) from 19.6V to 3.8V and increases the electron density to 8.8 x 1018cm−3. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on VTG. At VTG of 20V, the mobility decreases from 19.1 to 15.4 cm2/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at VTG of - 20V, the mobility increases from 6.4 to 7.5cm2/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate

  10. Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

    International Nuclear Information System (INIS)

    We have investigated the dependence of Negative-Bias-illumination-Stress (NBIS) upon channel length, in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The negative shift of the transfer characteristic associated with NBIS decreases for increasing channel length and is practically suppressed in devices with L = 100-μm. The effect is consistent with creation of donor defects, mainly in the channel regions adjacent to source and drain contacts. Excellent agreement with experiment has been obtained by an analytical treatment, approximating the distribution of donors in the active layer by a double exponential with characteristic length LD ∼ Ln ∼ 10-μm, the latter being the electron diffusion length. The model also shows that a device with a non-uniform doping distribution along the active layer is in all equivalent, at low drain voltages, to a device with the same doping averaged over the active layer length. These results highlight a new aspect of the NBIS mechanism, that is, the dependence of the effect upon the relative magnitude of photogenerated holes and electrons, which is controlled by the device potential/band profile. They may also provide the basis for device design solutions to minimize NBIS

  11. Scattering effect of the high-index dielectric nanospheres for high performance hydrogenated amorphous silicon thin-film solar cells.

    Science.gov (United States)

    Yang, Zhenhai; Gao, Pingqi; Zhang, Cheng; Li, Xiaofeng; Ye, Jichun

    2016-01-01

    Dielectric nanosphere arrays are considered as promising light-trapping designs with the capability of transforming the freely propagated sunlight into guided modes. This kinds of designs are especially beneficial to the ultrathin hydrogenated amorphous silicon (a-Si:H) solar cells due to the advantages of using lossless material and easily scalable assembly. In this paper, we demonstrate numerically that the front-sided integration of high-index subwavelength titanium dioxide (TiO2) nanosphere arrays can significantly enhance the light absorption in 100 nm-thick a-Si:H thin films and thus the power conversion efficiencies (PCEs) of related solar cells. The main reason behind is firmly attributed to the strong scattering effect excited by TiO2 nanospheres in the whole waveband, which contributes to coupling the light into a-Si:H layer via two typical ways: 1) in the short-waveband, the forward scattering of TiO2 nanospheres excite the Mie resonance, which focuses the light into the surface of the a-Si:H layer and thus provides a leaky channel; 2) in the long-waveband, the transverse waveguided modes caused by powerful scattering effectively couple the light into almost the whole active layer. Moreover, the finite-element simulations demonstrate that photocurrent density (Jph) can be up to 15.01 mA/cm(2), which is 48.76% higher than that of flat system. PMID:27455911

  12. Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

    Science.gov (United States)

    Qian, Hui-Min; Yu, Guang; Lu, Hai; Wu, Chen-Fei; Tang, Lan-Feng; Zhou, Dong; Ren, Fang-Fang; Zhang, Rong; Zheng, You-Liao; Huang, Xiao-Ming

    2015-07-01

    The time and temperature dependence of threshold voltage shift under positive-bias stress (PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτstress = 0.72 eV for the PBS process and an average effective energy barrier Eτrecovery = 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China

  13. Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Kwang-Won; Cho, Won-Ju, E-mail: chowj@kw.ac.kr [Department of Electronic Materials Engineering, Kwangwoon University, 447-1, Wolgye-dong, Nowon-gu, Seoul 139-701 (Korea, Republic of)

    2014-11-24

    In this study, we evaluated the effects of microwave irradiation (MWI) post-deposition-annealing (PDA) treatment on the gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) and compared the results with a conventional thermal annealing PDA treatment. The MWI-PDA-treated a-IGZO TFTs exhibited enhanced electrical performance as well as improved long-term stability with increasing microwave power. The positive turn-on voltage shift (ΔV{sub ON}) as a function of stress time with positive bias and varying temperature was precisely modeled on a stretched-exponential equation, suggesting that charge trapping is a dominant mechanism in the instability of MWI-PDA-treated a-IGZO TFTs. The characteristic trapping time and average effective barrier height for electron transport indicate that the MWI-PDA treatment effectively reduces the defects in a-IGZO TFTs, resulting in a superior resistance against gate bias stress.

  14. Fabrication of amorphous InGaZnO thin-film transistor-driven flexible thermal and pressure sensors

    International Nuclear Information System (INIS)

    In this work, we present the results concerning the use of amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistor (TFT) as a driving transistor of the flexible thermal and pressure sensors which are applicable to artificial skin systems. Although the a-IGZO TFT has been attracting much attention as a driving transistor of the next-generation flat panel displays, no study has been performed about the application of this new device to the driving transistor of the flexible sensors yet. The proposed thermal sensor pixel is composed of the series-connected a-IGZO TFT and ZnO-based thermistor fabricated on a polished metal foil, and the ZnO-based thermistor is replaced by the pressure sensitive rubber in the pressure sensor pixel. In both sensor pixels, the a-IGZO TFT acts as the driving transistor and the temperature/pressure-dependent resistance of the ZnO-based thermistor/pressure-sensitive rubber mainly determines the magnitude of the output currents. The fabricated a-IGZO TFT-driven flexible thermal sensor shows around a seven times increase in the output current as the temperature increases from 20 °C to 100 °C, and the a-IGZO TFT-driven flexible pressure sensors also exhibit high sensitivity under various pressure environments. (paper)

  15. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    Directory of Open Access Journals (Sweden)

    Minkyu Chun

    2015-05-01

    Full Text Available We investigated the effects of top gate voltage (VTG and temperature (in the range of 25 to 70 oC on dual-gate (DG back-channel-etched (BCE amorphous-indium-gallium-zinc-oxide (a-IGZO thin film transistors (TFTs characteristics. The increment of VTG from -20V to +20V, decreases the threshold voltage (VTH from 19.6V to 3.8V and increases the electron density to 8.8 x 1018cm−3. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on VTG. At VTG of 20V, the mobility decreases from 19.1 to 15.4 cm2/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at VTG of - 20V, the mobility increases from 6.4 to 7.5cm2/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  16. Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Um, Jae Gwang; Mativenga, Mallory; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); Migliorato, Piero [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); Electrical Engineering Division, Department of Engineering, Cambridge University, Cambridge CB3 0FA (United Kingdom)

    2015-06-21

    We have investigated the dependence of Negative-Bias-illumination-Stress (NBIS) upon channel length, in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The negative shift of the transfer characteristic associated with NBIS decreases for increasing channel length and is practically suppressed in devices with L = 100-μm. The effect is consistent with creation of donor defects, mainly in the channel regions adjacent to source and drain contacts. Excellent agreement with experiment has been obtained by an analytical treatment, approximating the distribution of donors in the active layer by a double exponential with characteristic length L{sub D} ∼ L{sub n} ∼ 10-μm, the latter being the electron diffusion length. The model also shows that a device with a non-uniform doping distribution along the active layer is in all equivalent, at low drain voltages, to a device with the same doping averaged over the active layer length. These results highlight a new aspect of the NBIS mechanism, that is, the dependence of the effect upon the relative magnitude of photogenerated holes and electrons, which is controlled by the device potential/band profile. They may also provide the basis for device design solutions to minimize NBIS.

  17. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Chun, Minkyu; Chowdhury, Md Delwar Hossain; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

    2015-05-15

    We investigated the effects of top gate voltage (V{sub TG}) and temperature (in the range of 25 to 70 {sup o}C) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of V{sub TG} from -20V to +20V, decreases the threshold voltage (V{sub TH}) from 19.6V to 3.8V and increases the electron density to 8.8 x 10{sup 18}cm{sup −3}. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on V{sub TG}. At V{sub TG} of 20V, the mobility decreases from 19.1 to 15.4 cm{sup 2}/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at V{sub TG} of - 20V, the mobility increases from 6.4 to 7.5cm{sup 2}/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  18. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  19. Contact resistance asymmetry of amorphous indium–gallium–zinc–oxide thin-film transistors by scanning Kelvin probe microscopy

    Science.gov (United States)

    Chen-Fei, Wu; Yun-Feng, Chen; Hai, Lu; Xiao-Ming, Huang; Fang-Fang, Ren; Dun-Jun, Chen; Rong, Zhang; You-Dou, Zheng

    2016-05-01

    In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain (S/D) series resistance in operating amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metal-semiconductor junction. Project supported by the Key Industrial R&D Program of Jiangsu Province, China (Grant No. BE2015155), the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. 021014380033).

  20. Amorphous silicon thin film transistor active-matrix organic light-emitting diode displays fabricated on flexible substrates

    Science.gov (United States)

    Nichols, Jonathan A.

    Organic light-emitting diode (OLED) displays are of immense interest because they have several advantages over liquid crystal displays, the current dominant flat panel display technology. OLED displays are emissive and therefore are brighter, have a larger viewing angle, and do not require backlights and filters, allowing thinner, lighter, and more power efficient displays. The goal of this work was to advance the state-of-the-art in active-matrix OLED display technology. First, hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) active-matrix OLED pixels and arrays were designed and fabricated on glass substrates. The devices operated at low voltages and demonstrated that lower performance TFTs could be utilized in active-matrix OLED displays, possibly allowing lower cost processing and the use of polymeric substrates. Attempts at designing more control into the display at the pixel level were also made. Bistable (one bit gray scale) active-matrix OLED pixels and arrays were designed and fabricated. Such pixels could be used in novel applications and eventually help reduce the bandwidth requirements in high-resolution and large-area displays. Finally, a-Si:H TFT active-matrix OLED pixels and arrays were fabricated on a polymeric substrate. Displays fabricated on a polymeric substrates would be lightweight; flexible, more rugged, and potentially less expensive to fabricate. Many of the difficulties associated with fabricating active-matrix backplanes on flexible substrates were studied and addressed.

  1. Measurement and Modeling of Short and Medium Range Order in Amorphous Ta2O5 Thin Films.

    Science.gov (United States)

    Shyam, Badri; Stone, Kevin H; Bassiri, Riccardo; Fejer, Martin M; Toney, Michael F; Mehta, Apurva

    2016-01-01

    Amorphous films and coatings are rapidly growing in importance. Yet, there is a dearth of high-quality structural data on sub-micron films. Not understanding how these materials assemble at atomic scale limits fundamental insights needed to improve their performance. Here, we use grazing-incidence x-ray total scattering measurements to examine the atomic structure of the top 50-100 nm of Ta2O5 films; mirror coatings that show high promise to significantly improve the sensitivity of the next generation of gravitational-wave detectors. Our measurements show noticeable changes well into medium range, not only between crystalline and amorphous, but also between as-deposited, annealed and doped amorphous films. It is a further challenge to quickly translate the structural information into insights into mechanisms of packing and disorder. Here, we illustrate a modeling approach that allows translation of observed structural features to a physically intuitive packing of a primary structural unit based on a kinked Ta-O-Ta backbone. Our modeling illustrates how Ta-O-Ta units link to form longer 1D chains and even 2D ribbons, and how doping and annealing influences formation of 2D order. We also find that all the amorphousTa2O5 films studied in here are not just poorly crystalline but appear to lack true 3D order. PMID:27562542

  2. Determination of the optical bandgap and disorder energies of thin amorphous SiC and AlN films produced by radio frequency magnetron sputtering

    International Nuclear Information System (INIS)

    Amorphous aluminum nitrite and silicon carbide (a-AlN and a-SiC) thin films were prepared by radio frequency magnetron sputtering. Due to the deposition method and production conditions the deposited films grown in amorphous state. We systematically measure the optical bandgap through optical transmission spectroscopy and its change with a cumulative thermal annealing. The results show a linear relation between the Tauc-gap and the Tauc-slope for both AlN and SiC films, which can be explained analytically from the existence of an Urbach focus, and therefore can be used to determine the Urbach focus or to ensure the correct usage of the bandgap determination methods.

  3. Synthesis of Poly-Silicon Thin Films on Glass Substrate Using Laser Initiated Metal Induced Crystallization of Amorphous Silicon for Space Power Application

    Science.gov (United States)

    Abu-Safe, Husam H.; Naseem, Hameed A.; Brown, William D.

    2007-01-01

    Poly-silicon thin films on glass substrates are synthesized using laser initiated metal induced crystallization of hydrogenated amorphous silicon films. These films can be used to fabricate solar cells on low cost glass and flexible substrates. The process starts by depositing 200 nm amorphous silicon films on the glass substrates. Following this, 200 nm of sputtered aluminum films were deposited on top of the silicon layers. The samples are irradiated with an argon ion cw laser beam for annealing. Laser power densities ranging from 4 to 9 W/cm2 were used in the annealing process. Each area on the sample is irradiated for a different exposure time. Optical microscopy was used to examine any cracks in the films and loss of adhesion to the substrates. X-Ray diffraction patterns from the initial results indicated the crystallization in the films. Scanning electron microscopy shows dendritic growth. The composition analysis of the crystallized films was conducted using Energy Dispersive x-ray Spectroscopy. The results of poly-silicon films synthesis on space qualified flexible substrates such as Kapton are also presented.

  4. Crystallization of amorphous zirconium thin film using ion implantation by a plasma focus of 1 kJ

    Energy Technology Data Exchange (ETDEWEB)

    Rico, L. [Instituto de Fisica Rosario (CONICET-UNR), Bvrd. 27 de Febrero 210 Bis, S2000EZP Rosario (Argentina)], E-mail: bernardo@fceia.unr.edu.ar; Gomez, B.J.; Feugeas, J. [Instituto de Fisica Rosario (CONICET-UNR), Bvrd. 27 de Febrero 210 Bis, S2000EZP Rosario (Argentina); Sanctis, O. de [Instituto de Fisica Rosario (CONICET-UNR), Bvrd. 27 de Febrero 210 Bis, S2000EZP Rosario (Argentina); Laboratorio de Materiales Ceramicos, Universidad Nacional de Rosario, Pellegrini 250, 2000 Rosario (Argentina)

    2007-10-31

    In this work preliminary results of amorphous zirconium crystallization using ion beam pulses are presented. Energetic argon- and oxygen-ion beams generated by a plasma focus device were used to promote crystallization on amorphous ZrO{sub 2}-2.5 mol% Y{sub 2}O{sub 3} film deposited by chemical solution deposition onto silica glass substrate. The films were burnt at 370 deg. C for 1 h in normal atmosphere previous to plasma irradiation. The irradiation was performed by means of successive pulses of ion beams. The evolution of the surface morphology and crystallization was followed by AFM and X-rays diffraction in a grazing incidence asymmetric Bragg geometry (GIAB), respectively. Argon-irradiated films showed highly nucleated cubic zirconia after 10 pulses. On the other hand, oxygen-irradiated films showed a delayed and less extensive cubic nucleation, but a more ordered structure and well-defined grains.

  5. Thin Films

    Czech Academy of Sciences Publication Activity Database

    Šolcová, Olga

    Maribor: Univerza v Mariboru, 2013. [Nanofuture. Maribor (SI), 03.02.2013-07.02.2013] R&D Projects: GA TA ČR TA01020804 Institutional support: RVO:67985858 Keywords : sol-gel methods * thin films * nannomaterials Subject RIV: CI - Industrial Chemistry, Chemical Engineering

  6. Thin-film solar cells from sputtered and vapor-deposited amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, W.; Ruebel, H.; Iselborn, S.; Arenas, G.; Wagner, C.; Schroeder, B.; Geiger, J.

    1984-01-01

    The properties of sputtered and evaporated a-Si:H, and the application of this material for the preparation of solar cells were investigated. Correlations are found between the photoelectrical properties of the films and the amount and bonding configuration of the hydrogen incorporated, both influencing the film structure. Optimally passivated sputtered material containing 10 at % hydrogen is deposited for preparation of Schottky and pin-type solar cells. Conversion efficiencies 2% are measured. A possible efficiency of 5% is calculated taking the best values obtained for cell parameters. Progress in the defect passivation of reactively evaporated a-Si:H films is reported. (ESA)

  7. Photoelectron emission yield experiments on evolution of sub-gap states in amorphous In-Ga-Zn-O thin films with post deposition hydrogen treatment

    International Nuclear Information System (INIS)

    Total photoyield emission spectroscopy (TPYS) was applied to study the evolution of sub-gap states in hydrogen-treated amorphous In-Ga-Zn-O (a-IGZO) thin films. The a-IGZO thin films were subjected to hydrogen radicals and subsequently annealed in ultra-high vacuum (UHV) conditions. A clear onset of the electron emission was observed at around 4.3 eV from the hydrogen-treated a-IGZO thin films. After successive UHV annealing at 300 °C, the onset in the TPYS spectra was shifted to 4.15 eV, and the photoelectron emission from the sub-gap states was decreased as the annealing temperature was increased. In conjunction with the results of thermal desorption spectrometer, it was deduced that the hydrogen atoms incorporated in the a-IGZO thin films induced metastable sub-gap states at around 4.3 eV from vacuum level just after the hydrogenation. It was also suggested that the defect configuration was changed due to the higher temperature UHV annealing, and that the hydrogen atoms desorbed with the involvement of Zn atoms. These experiments produced direct evidence to show the formation of sub-gap states as a result of hydrogen incorporation into the a-IGZO thin films

  8. Electrochemical characterization of amorphous LiFe(WO{sub 4}){sub 2} thin films as positive electrodes for rechargeable lithium batteries

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chi-Lin; Fu, Zheng-Wen [Department of Chemistry and Laser Chemistry Institute, Shanghai Key Laboratory of Molecular Catalysts and Innovative Materials, Fudan University, Handan Road 220, Shanghai 200433 (China)

    2008-09-20

    Amorphous LiFe(WO{sub 4}){sub 2} thin films have been fabricated by radio-frequency (R.F.) sputtering deposition at room temperature. The as-deposited and electrochemically cycled thin films are, respectively, characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, selected area electron diffraction, and X-ray photoelectron spectra techniques. An initial discharge capacity of 198 mAh/g in Li/LiFe(WO{sub 4}){sub 2} cells is obtained, and the electrochemical behavior is mostly preserved in the following cycling. These results identified the electrochemical reactivity of two redox couples, Fe{sup 3+}/Fe{sup 2+} and W{sup 6+}/W{sup x+} (x = 4 or 5). The kinetic parameters and chemical diffusion coefficients of Li intercalation/deintercalation are estimated by cyclic voltammetry and alternate-current (AC) impedance measurements. All-solid-state thin film lithium batteries with Li/LiPON/LiFe(WO{sub 4}){sub 2} layers are fabricated and show high capacity of 104 {mu}Ah/cm{sup 2} {mu}m in the first discharge. As-deposited LiFe(WO{sub 4}){sub 2} thin film is expected to be a promising positive electrode material for future rechargeable thin film batteries due to its large volumetric rate capacity, low-temperature fabrication and good electrode/electrolyte interface. (author)

  9. Electrochemical characterization of amorphous LiFe(WO{sub 4}){sub 2} thin films as positive electrodes for rechargeable lithium batteries

    Energy Technology Data Exchange (ETDEWEB)

    Li Chilin [Department of Chemistry and Laser Chemistry Institute, Shanghai Key Laboratory of Molecular Catalysts and Innovative Materials, Fudan University, Handan Road 220, Shanghai 200433 (China); Fu Zhengwen [Department of Chemistry and Laser Chemistry Institute, Shanghai Key Laboratory of Molecular Catalysts and Innovative Materials, Fudan University, Handan Road 220, Shanghai 200433 (China)], E-mail: zhengwen@sh163.net

    2008-09-20

    Amorphous LiFe(WO{sub 4}){sub 2} thin films have been fabricated by radio-frequency (R.F.) sputtering deposition at room temperature. The as-deposited and electrochemically cycled thin films are, respectively, characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, selected area electron diffraction, and X-ray photoelectron spectra techniques. An initial discharge capacity of 198 mAh/g in Li/LiFe(WO{sub 4}){sub 2} cells is obtained, and the electrochemical behavior is mostly preserved in the following cycling. These results identified the electrochemical reactivity of two redox couples, Fe{sup 3+}/Fe{sup 2+} and W{sup 6+}/W{sup x+} (x = 4 or 5). The kinetic parameters and chemical diffusion coefficients of Li intercalation/deintercalation are estimated by cyclic voltammetry and alternate-current (AC) impedance measurements. All-solid-state thin film lithium batteries with Li/LiPON/LiFe(WO{sub 4}){sub 2} layers are fabricated and show high capacity of 104 {mu}Ah/cm{sup 2} {mu}m in the first discharge. As-deposited LiFe(WO{sub 4}){sub 2} thin film is expected to be a promising positive electrode material for future rechargeable thin film batteries due to its large volumetric rate capacity, low-temperature fabrication and good electrode/electrolyte interface.

  10. The influence of RF power on the electrical properties of sputtered amorphous InGa-Zn-O thin films and devices

    Institute of Scientific and Technical Information of China (English)

    Shi Junfei; Dong Chengyuan; Dai Wenjun; Wu Jie; Chen Yuting; Zhan Runze

    2013-01-01

    The influence of radio frequency (RF) power on the properties of magnetron sputtered amorphous indium gallium zinc oxide (a-IGZO) thin films and the related thin-film transistor (TFT) devices is investigated comprehensively.A series of a-IGZO thin films prepared with magnetron sputtering at various RF powers are examined.The results prove that the deposition rate sensitively depends on RF power.In addition,the carrier concentration increases from 0.91 × 1019 to 2.15 × 1019 cm-3 with the RF power rising from 40 to 80 W,which may account for the corresponding decrease in the resistivity of the a-IGZO thin films.No evident impacts of RF power are observed on the surface roughness,crystalline nature and stoichiometry of the a-IGZO samples.On the other hand,optical transmittance is apparently influenced by RF power where the extracted optical band-gap value increases from 3.48 to 3.56 eV with RF power varying from 40 to 80 W,as is supposed to result from the carrierinduced band-filling effect.The rise in RF power can also affect the performance of a-IGZO TFTs,in particular by increasing the field-effect mobility clearly,which is assumed to be due to the alteration of the extended states in a-IGZO thin films.

  11. Optical properties of amorphous and crystalline Sb-doped SnO2 thin films studied with spectroscopic ellipsometry: Optical gap energy and effective mass

    International Nuclear Information System (INIS)

    We investigated the optical properties of amorphous and crystalline antimony (Sb)-doped tin dioxide (SnO2) thin films grown using the co-sputtering deposition method at room temperature. We used undoped and Sb-doped (8 wt. %) SnO2 targets. Varying the relative power ratio of the two targets, we controlled the Sb-composition of the SnO2:Sb thin films up to 2.3 at. % of Sb contents. Through annealing, the as-grown amorphous SnO2:Sb thin films were transformed to crystalline thin films. Dielectric functions were obtained from the measured ellipsometry angles, Ψ and Δ, using the Drude and parametric optical constant models. We determined the absorption coefficients and optical gap energies of the SnO2:Sb thin films from the dielectric functions. We found increasing optical gap energy with increasing Sb composition. Increases in the Drude tail amplitudes, a signature of free carrier concentrations, were found in annealed, crystalline thin films with increasing Sb composition. The increase in the optical gap energy with increasing Sb composition was mainly attributed to the Burstein-Moss effect. Using Hall effect measurements, we obtained Hall carrier concentrations (NHall) and electron Hall mobilities (μHall). The carrier concentrations and mobilities increased from 2.6 × 1019 cm−3 and 1.0 cm2/(V s) to 2.0 × 1020 cm−1 and 7.2 cm2/(V s), respectively, with increasing Sb contents. This result suggests that the nominally undoped SnO2 films are unintentionally n-type doped. Assuming that the NHall and optical carrier concentrations (Nopt) were the same, we obtained the effective masses of the SnO2:Sb thin films with increasing Sb compositions. The effective masses of the SnO2:Sb thin films increased from 0.245 m0 to 0.4 m0 with increasing Sb doping contents, and the nonparabolicity of the conduction band was estimated. We discussed the relation between the optical (μopt) and Hall (μHall) mobilities as a function of Sb contents and grain sizes

  12. Determination of the optical band gap for amorphous and nanocrystalline copper oxide thin films prepared by SILAR technique

    Energy Technology Data Exchange (ETDEWEB)

    Abdel Rafea, M; Roushdy, N [Electronic Materials Department, Advanced Technologies and New Materials Institute, Mubarak City for Scientific Research and Technology Applications, PO Box 21934, New Borg El-Arab City, Alexandria (Egypt)], E-mail: m.abdelrafea@mucsat.sci.eg

    2009-01-07

    Amorphous copper oxide films were deposited using the SILAR technique. Both Cu{sub 2}O and CuO crystallographic phases exist in deposited and annealed films. Crystallization and growth processes by annealing at temperatures up to 823 K form grains with nano- and micro-spherical shapes. The calculated crystallite size from the XRD measurement was found to be in the range 14-21 nm while nano-spheres in the diameter range 50-100 nm were observed by SEM micrographs. The band gap for amorphous film was found to be 2.3 eV which increased slowly to 2.4 eV by annealing the film at 373 K. This was explained by defect redistribution in amorphous films. Annealing in the temperature range 373-673 K decreased the band gap gradually to 1.85 eV. The decrease of the band gap with annealing temperature in the range 373-673 K agrees well with the Brus model of the energy gap confinement effect in nanostructured semiconducting materials. Annealing in the temperature range 673-823 K decreases the band gap slowly to 1.7 eV due to the smaller contribution of the confinement effect. Below 573 K, Cu{sub 2}O is the most probable crystalline phase in the film, while Cu{sub 2}O and CuO crystalline phases may coexist at annealing temperatures above 573 K due to further oxidation of Cu{sub 2}O. A wider transmittance spectral window in the visible region was obtained by controlling the annealing conditions of the amorphous copper oxide film and its applicability to the window layer of solar cell was suggested.

  13. Determination of the optical band gap for amorphous and nanocrystalline copper oxide thin films prepared by SILAR technique

    International Nuclear Information System (INIS)

    Amorphous copper oxide films were deposited using the SILAR technique. Both Cu2O and CuO crystallographic phases exist in deposited and annealed films. Crystallization and growth processes by annealing at temperatures up to 823 K form grains with nano- and micro-spherical shapes. The calculated crystallite size from the XRD measurement was found to be in the range 14-21 nm while nano-spheres in the diameter range 50-100 nm were observed by SEM micrographs. The band gap for amorphous film was found to be 2.3 eV which increased slowly to 2.4 eV by annealing the film at 373 K. This was explained by defect redistribution in amorphous films. Annealing in the temperature range 373-673 K decreased the band gap gradually to 1.85 eV. The decrease of the band gap with annealing temperature in the range 373-673 K agrees well with the Brus model of the energy gap confinement effect in nanostructured semiconducting materials. Annealing in the temperature range 673-823 K decreases the band gap slowly to 1.7 eV due to the smaller contribution of the confinement effect. Below 573 K, Cu2O is the most probable crystalline phase in the film, while Cu2O and CuO crystalline phases may coexist at annealing temperatures above 573 K due to further oxidation of Cu2O. A wider transmittance spectral window in the visible region was obtained by controlling the annealing conditions of the amorphous copper oxide film and its applicability to the window layer of solar cell was suggested.

  14. Fabrication of ion conductive tin oxide-phosphate amorphous thin films by atomic layer deposition

    International Nuclear Information System (INIS)

    This work reports the atomic layer deposition (ALD) of tin oxide-phosphate films using tetrakis(dimethylamino)tin and trimethyl phosphate as precursors. The growth rates were 1.23–1.84 Å/cycle depending upon the deposition temperature and precursor combination. The ionic conductivity of the ALD tin oxide-phosphate films was evaluated by cross-plane impedance measurements in the temperature range of 50–300 °C under atmospheric air, with the highest conductivity measured as 1.92 × 10−5 S cm−1 at 300 °C. Furthermore, high-resolution x-ray photoelectron spectroscopy exhibited two O1s peaks that were classified as two subpeaks of hydroxyl ions and oxygen ions, revealing that the quantity of hydroxyl ions in the ALD tin oxide-phosphate films influences their ionic conductivity

  15. Thin film solar cells made of sputtered and evaporated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, W.; Ruebel, H.; Iselborn, S.; Arenas, G.; Wagner, C.; Schroeder, B.; Geiger, J.

    1984-01-01

    In this paper we report on the results of a study about the fundamental properties of sputtered and evaporated a-Si:H as well as about the application of this material for the preparation of solar cells. Correlations have been found between the photoelectrical properties of the films and the amount and bonding configuration of the hydrogen incorporated both influencing the film structure. Optimum passivated sputtered material, which contains about 10 at% hydrogen has been deposited for preparation of Schottky and p-i-n type solar cells. In first tests conversion efficiencies eta larger than 2% have been measured. A possible conversion efficiency of eta=13.5 mA x 0.7 V x 0.54/100 mW=5% can be calculated taking the best values which were obtained for the parameters of numerous cells prepared till now. Great progress has been made in the defect passivation of reactively evaporated a-Si:H films.

  16. Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

    International Nuclear Information System (INIS)

    The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InOx) thin film transistors (TFTs) is reported. In a-InOx TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InOx matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InOx TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects

  17. Spectro-ellipsometric studies of sputtered amorphous Titanium dioxide thin films: simultaneous determination of refractive index, extinction coefficient, and void distribution

    CERN Document Server

    Lee, S I; Oh, S G

    1999-01-01

    Amorphous titanium dioxide thin films were deposited onto silicon substrates by using RF magnetron sputtering, and the index of refraction, the extinction coefficient, and the void distribution of these films were simultaneously determined from the analyses of there ellipsometric spectra. In particular, our novel strategy, which combines the merits of multi-sample fitting, the dual dispersion function, and grid search, was proven successful in determining optical constants over a wide energy range, including the energy region where the extinction coefficient was large. Moreover, we found that the void distribution was dependent on the deposition conditions, such as the sputtering power, the substrate temperature, and the substrate surface.

  18. Picosecond and nanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications

    Science.gov (United States)

    Theodorakos, I.; Zergioti, I.; Vamvakas, V.; Tsoukalas, D.; Raptis, Y. S.

    2014-01-01

    In this work, a picosecond diode pumped solid state laser and a nanosecond Nd:YAG laser have been used for the annealing and the partial nano-crystallization of an amorphous silicon layer. These experiments were conducted as an alternative/complementary to plasma-enhanced chemical vapor deposition method for fabrication of micromorph tandem solar cell. The laser experimental work was combined with simulations of the annealing process, in terms of temperature distribution evolution, in order to predetermine the optimum annealing conditions. The annealed material was studied, as a function of several annealing parameters (wavelength, pulse duration, fluence), as far as it concerns its structural properties, by X-ray diffraction, SEM, and micro-Raman techniques.

  19. Picosecond and nanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Theodorakos, I.; Zergioti, I.; Tsoukalas, D.; Raptis, Y. S., E-mail: yraptis@central.ntua.gr [Physics Department, National Technical University of Athens, Heroon Polytechniou 9, 15780 Zographou, Athens (Greece); Vamvakas, V. [Heliosphera SA, Industrial Area of Tripolis, 8th Building Block, 5th Road, GR-221 00 Tripolis (Greece)

    2014-01-28

    In this work, a picosecond diode pumped solid state laser and a nanosecond Nd:YAG laser have been used for the annealing and the partial nano-crystallization of an amorphous silicon layer. These experiments were conducted as an alternative/complementary to plasma-enhanced chemical vapor deposition method for fabrication of micromorph tandem solar cell. The laser experimental work was combined with simulations of the annealing process, in terms of temperature distribution evolution, in order to predetermine the optimum annealing conditions. The annealed material was studied, as a function of several annealing parameters (wavelength, pulse duration, fluence), as far as it concerns its structural properties, by X-ray diffraction, SEM, and micro-Raman techniques.

  20. Analysis of Amorphous Thin-Film Tandem Solar Cells and Their Component Layers

    Science.gov (United States)

    Ibrahim, Kamarulazizi

    Available from UMI in association with The British Library. Studies of hydrogenated amorphous silicon carbide (a-Si:C:H) alloys used for the window layer of tandem cells showed that increasing carbon incorporation led to a greater structural disorder. Density of localised states (DOS), the minority carrier lifetime and the characteristic width of the tail states were all highly dependent on the silane -propane ratio, g. The optical bandgap which ranges from 1.88-2.32 eV, increases with propane flow but the refractive index decreases with propane flow. The highest dark and illuminated conductivity were observed at g = 5 which corresponds to the lowest DOS. A new structure, a double Schottky diode, was proposed for determination of DOS using space charge limited current (SCLC) technique. This was shown to be valid by using a thickness scaling test. For the first time the minority carrier storage time was observed in the diode recovery method not only in hydrogenated amorphous silicon (a-Si:H) alloy diodes but also in a-Si:C:H alloy diodes. A new shutter system has been introduced in the plasma depositing chamber which has made it possible to analyse the components' effects on the properties of the pinpin tandem solar cells by physically separating the components. In this way the first p-layer and first pin cell were identified as the limiting components in the attainment of high short circuit current. Using a p-layer a-Si:C:H was found to be better than a wholly pin a-Si:C:H. The desired recombination of carriers at the middle n/p junction is obtained by correct design: An asymmetric junction with n-layer thicker than the p-layer resulted in the highest current density. A tandem solar cell equivalent circuit was proposed based on the results.

  1. Optical and electrical properties of polycrystalline and amorphous Al-Ti thin films

    DEFF Research Database (Denmark)

    Canulescu, Stela; Borca, C. N.; Rechendorff, Kristian;

    2016-01-01

    than k allows us to explore the parameter space for the free-electron behavior in transition metal-Al alloys. The free electron model, applied for the polycrystalline Al-Ti films with Ti content up to 20%, leads to an optical reflectance at near infrared wavelengths that scales linearly with the square...... root of the electrical resistivity...

  2. Transition from a nanocrystalline phase to an amorphous phase in In-Si-O thin films: The correlation between the microstructure and the optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jun-Woo; So, Hyeon Seob; Lee, Hosun, E-mail: hlee@khu.ac.kr [Department of Applied Physics and Institute of Natural Sciences, Kyung Hee University, Yong-In 446-701 (Korea, Republic of); Lee, Hye-Min; Kim, Hyo-Joong; Kim, Han-Ki [Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yong-In 446-701 (Korea, Republic of)

    2015-04-21

    We investigated the structural and optical properties of In-Si-O thin films as the phase abruptly changes from nanocrystalline (nc) to amorphous (a) with increasing Si content. In-Si-O thin films were deposited on Si substrate using a co-sputtering deposition method. The RF power of the In{sub 2}O{sub 3} target was fixed at 100 W, while the power applied to the SiO{sub 2} target was varied between 0 W and 60 W. At the Si = 2.8 at. %, i.e., at the onset of amorphous phase, the optical properties, including the dielectric functions, optical gap energies, and phonon modes, changed abruptly which were triggered by changes in the crystallinity and surface morphology. X-ray diffraction (XRD) spectra showed crystalline (c-) In{sub 2}O{sub 3}-like peaks below Si = 2.2%. Additionally, a broad peak associated with an amorphous (a-) In{sub 2}O{sub 3} phase appeared above 2.8%. However, the Raman spectra of In-Si-O showed very weak peaks associated with c-In{sub 2}O{sub 3} below 2.2%, and then showed a strong Raman peak associated with a-In-Si-O above 2.8%. X-ray photoelectron spectroscopy measurements showed that oxygen vacancy-related peak intensities increased abruptly above Si = 2.8%. The contrasting results of XRD and Raman measurements can be explained as follows: first, the large enhancement in Drude tails in the a-In-Si-O phase was caused by Si-induced amorphization and a large increase in the density of oxygen vacancies in the In-Si-O thin films. Second, the apparently drastic increase of the Raman peak intensity near 364 cm{sup −1} (for amorphous phase, i.e., above Si = 2.8%) is attributed to a disorder-activated infrared mode caused by both the amorphization and the increase in the oxygen vacancy density in In-Si-O thin films.

  3. Thin film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K; Ullal, H S

    1989-05-01

    Thin films are considered a potentially attractive technological approach to making cost-effective electricity by photovoltaics. Over the last twenty years, many have been investigated and some (cadmium telluride, copper indium diselenide, amorphous silicon) have become leading candidates for future large-scale commercialization. This paper surveys the past development of these key thin films and gives their status and future prospects. In all cases, significant progress toward cost-effective PV electricity has been made. If this progress continues, it appears that thin film PV could provide electricity that is competitive for summer daytime peaking power requirements by the middle of the 1990s; and electricity in a range that is competitive with fossil fuel costs (i.e., 6 cents/kilowatt-hour) should be available from PV around the turn of the century. 22 refs., 9 figs.

  4. Amorphous metallic films in silicon metallization systems

    Science.gov (United States)

    So, F.; Kolawa, E.; Nicolet, M. A.

    1985-01-01

    Diffusion barrier research was focussed on lowering the chemical reactivity of amorphous thin films on silicon. An additional area of concern is the reaction with metal overlays such as aluminum, silver, and gold. Gold was included to allow for technology transfer to gallium arsenide PV cells. Amorphous tungsten nitride films have shown much promise. Stability to annealing temperatures of 700, 800, and 550 C were achieved for overlays of silver, gold, and aluminum, respectively. The lower results for aluminum were not surprising because there is an eutectic that can form at a lower temperature. It seems that titanium and zirconium will remove the nitrogen from a tungsten nitride amorphous film and render it unstable. Other variables of research interest were substrate bias and base pressure during sputtering.

  5. Laser annealing and simulation of amorphous silicon thin films for solar cell applications

    Science.gov (United States)

    Theodorakos, I.; Raptis, Y. S.; Vamvakas, V.; Tsoukalas, D.; Zergioti, I.

    2014-03-01

    In this work, a picosecond DPSS and a nanosecond Nd:YAG laser have been used for the annealing and the partial nanocrystallization of an amorphous silicon layer. These experiments were conducted in order to improve the characteristics of a micromorph tandem solar cell. The laser annealing was attempted at 1064nm in order to obtain the desired crystallization's depth and ratios. Preliminary annealing-processes, with different annealing parameters, have been tested, such as fluence, repetition rate and number of pulses. Irradiations were applied in the sub-melt regime, in order to prevent significant diffusion of p- and n-dopants to take place within the structure. The laser experimental work was combined with simulations of the laser annealing process, in terms of temperature distribution evolution, using the Synopsys Sentaurus Process TCAD software. The optimum annealing conditions for the two different pulse durations were determined. Experimentally determined optical properties of our samples, such as the absorption coefficient and reflectivity, were used for a more realistic simulation. From the simulations results, a temperature profile, appropriate to yield the desired recrystallization was obtained for the case of ps pulses, which was verified from the experimental results described below. The annealed material was studied, as far as it concerns its structural properties, by XRD, SEM and micro-Raman techniques, providing consistent information on the characteristics of the nanocrystalline material produced by the laser annealing experiments. It was found that, with the use of ps pulses, the resultant polycrystalline region shows crystallization's ratios similar to a PECVD developed poly-Silicon layer, with slightly larger nanocrystallite's size.

  6. Effects of energetic species during the growth of nitrogenated amorphous carbon thin films on their nanomechanical properties

    International Nuclear Information System (INIS)

    Amorphous carbon nitride (CN x) films are promising materials either as wear-resistant or as solid-lubricant coatings, depending on their mechanical and tribological behavior. In this work, we produced amorphous CN x films by reactive magnetron sputtering, and we varied independently the film density, sp3/sp2 content and [N] concentration. The morphology, density and hybridization state of the CN x films were studied ex situ by X-ray reflectivity (XRR). Also, the effects of energetic species (mainly N+ or Ar+) on their microstructure and composition were investigated. Using the assumptions of the subplantation model and the results of SRIM simulations, we correlated the density of the films and [N] with the N+ ion energy. The nanomechanical and tribological properties of CN x films were studied by nanoindentation and nanoscratch tests. While both adhesion and ploughing mechanisms contribute to the friction behavior in the intermediate and high load ranges, the dominant friction mechanism in the low-load range was attributed to adhesion of the film to the substrate. CN x films grown without ion bombardment (IBD), depending on the normal load, will deform either elastically or elastically-plastically, and may even delaminate. For loads below 5 mN, nanoscratching showed mainly elastic behavior of the film, while above 5 mN, a mixed elastic-plastic behavior was identified. However, the scratch and friction response of the films grown under high-energy ion bombardment (IBD) during ion beam assisted deposition showed a load-dependent transition. The results will be discussed in detail

  7. Silicon Thin-Film Solar Cells

    OpenAIRE

    2007-01-01

    We review the field of thin-film silicon solar cells with an active layer thickness of a few micrometers. These technologies can potentially lead to low cost through lower material costs than conventional modules, but do not suffer from some critical drawbacks of other thin-film technologies, such as limited supply of basic materials or toxicity of the components. Amorphous Si technology is the oldest and best established thin-film silicon technology. Amorphous silicon is deposited at low t...

  8. Modulation of optical and electrical properties of sputtering-derived amorphous InGaZnO thin films by oxygen partial pressure

    International Nuclear Information System (INIS)

    Highlights: • Sputtering-derived a-IGZO thin films were grown on Si and glass substrates in a mixed atmosphere of Ar and O2. • XRD measurements have shown that the as-deposited thin films are all amorphous. • Blue shift in band gap and reduction in n with increasing the O2/Ar flow ratio have been detected. • Reduction of oxygen vacancies is suggested to be the cause of the band gap and resistivity increase. - Abstract: Sputtering-derived amorphous InGaZnO (a-IGZO) thin films were grown on Si and glass substrates in a mixed ambient of Ar and O2 at fixed 0.5 Pa working pressure. The influence of O2/Ar flow ratio on the optical and electrical properties of a-IGZO thin films has been systematically investigated by means of characterization from spectroscopic ellipsometry (SE), X-ray diffraction (XRD), scan electron microscopy (SEM), atomic force microscope (AFM), UV–vis spectroscopy, and electrical measurements. Results have shown that the band gap of the as-deposited IGZO films increases from 3.45 eV to 3.75 eV as the O2/Ar flow ratio increases from 0% to 20%. Blue shift in band gap and reduction in reactive index with increasing the O2/Ar flow ratio have been detected. Electrical measurements have indicated the increase in resistivity at higher O2/Ar gas flow ratio. Related mechanics about the increase in band gap and resistivity have been discussed in detail

  9. Effect of heat treatment on the structural and optical properties of amorphous Sb 2Se 3 and Sb 2Se 2S thin films

    Science.gov (United States)

    El-Sayad, E. A.; Moustafa, A. M.; Marzouk, S. Y.

    2009-05-01

    Nearly stoichiometric thin films of Sb 2Se 3 and Sb 2Se 2S were deposited, by conventional thermal evaporation of the presynthesized materials, on glass substrates held at room temperature. X-ray diffraction studies on the annealed films, at Ta=373, 423, and 473 K, revealed an amorphous-to-crystalline phase transition at Ta=423 and 473 K for Sb 2Se 3 and Sb 2Se 2S, respectively. The crystal structure of the polycrystalline films of Sb 2Se 3 and Sb 2Se 2S is single-phase of an orthorhombic type structure, with space group Pbnm (62) and Z=4, as that of their source materials. The optical constants ( n, k) and the thickness ( t) of the investigated films were determined from optical transmittance data, in the spectral range 600-2500 nm using the Swanepoel method. The dispersion parameters of the indicated compositions were determined from the analysis of the refractive index. The analysis of the optical absorption spectra revealed that the polycrystalline films exhibited both direct and indirect energy gaps, on the contrary to the amorphous films which showed only a non-direct energy gap with a relatively higher Urbach's tail.

  10. Analysis on the effect of amorphous photonic crystals on light extraction efficiency enhancement for GaN-based thin-film-flip-chip light-emitting diodes

    Science.gov (United States)

    Yue, Qingyang; Li, Kang; Kong, Fanmin; Zhao, Jia; Liu, Meng

    2016-05-01

    This work showed the liquid-like amorphous photonic crystals (PhCs) can effectively enhance the light extraction efficiency of GaN-based thin-film-flip-chip light-emitting diodes (TFFC LEDs) by the light scattering effect. The finite-difference time-domain (FDTD) method was employed to analyze the light scattering characteristics, numerical studies revealed that the amorphous PhCs can provide omnidirectional scattering, and the transmittances of amorphous PhCs is superior to that of triangular lattice PhCs when the incident angle is in the region 20 ° ≤ θ ≤ 35 ° . The influence of p-GaN layer thickness and the amorphous PhCs feature size on the light extraction efficiency was also studied by 3D-FDTD method systematically. For the proposed amorphous PhCs structure in n-GaN layer, the light extraction efficiency is enhanced by a factor of 1.49 as compared to conventional TFFC LEDs, which shows 1.07 times enhancement in comparison to that of triangular lattice PhCs.

  11. Investigation of optical and electrical properties of amorphous Se95−xSxZn5(x=0.2, 2, 5 and 10) thin films

    International Nuclear Information System (INIS)

    In this study, we reported that the optical and electrical analysis of amorphous Se90-xSxZn5 (x=0.2, 2, 5, 10) thin films. Bulk samples of the investigated material were prepared by melt quenching technique. Thin films of ~ 300nm thickness were deposited on cleaned glass substrates by thermal evaporation technique. The morphological study of the investigated material in powder form carried out by scanning electron microscopy (SEM) confirms the disorder of the material increases at lower sulfur doping (up to 5%) whereas at higher (S) doping (10%) the defects of the material decreases. The optical parameters were estimated from optical absorption spectra data measured from UV-Vis-spectrophotometer in the wavelength range 200-900 nm. It was found that the value of optical band gap (Eg) of the investigated thin films decreases up to lower S doping and increases at higher (S) doping. The other optical parameters such as absorption coefficient (α) and extinction coefficient (K) increases up to lower S doping and decreases at higher S doping. This remarkable change in the values of optical parameters was interpreted on the basis of model proposed by Davis and Mott. Electrical parameters of the investigated thin films were carried out in the temperature range 309-370 K. Analysis of data shows activation energy decreases with the increase of concentration of (S) increases up to 5% and at 10% it increases again

  12. Transparent, amorphous and organics-free ZnO thin films produced by chemical solution deposition at 150 {sup o}C

    Energy Technology Data Exchange (ETDEWEB)

    Tellier, J. [Jozef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia); Kuscer, D., E-mail: danjela.kuscer@ijs.s [Jozef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia); Malic, B.; Cilensek, J.; Skarabot, M.; Kovac, J. [Jozef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia); Goncalves, G. [CEMOP Uninova, CEMAT I3N, FCT-UNL, Caparica 2829-516 (Portugal); Musevic, I.; Kosec, M. [Jozef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia)

    2010-07-01

    We have studied the low-temperature processing of ZnO by chemical solution deposition. A transparent, stable precursor solution prepared from zinc acetate dihydrate dissolved in 2-methoxyethanol was spin-coated on SiO{sub x}/Si, soda-lime glass and polymer substrates and heated at 150 {sup o}C. Selected thin films deposited on SiO{sub x}/Si were additionally heated at 450 {sup o}C. Microstructural and chemical analyses showed that the thin films heated at 150 {sup o}C in air were amorphous, contained no organic residues and had a root mean square roughness of 0.7 nm. The films deposited on SiO{sub x}/Si and heated at 450 {sup o}C were crystallised and consisted of randomly oriented grains with a diameter of about 20 nm. All thin films were transparent, exhibiting a transmission of over 80% in the visible range. The resistivity of the 120-nm thick ZnO films processed at 150 {sup o}C was 57 M{Omega} cm and upon heating at 450 {sup o}C it decreased to 1.9 k{Omega} cm.

  13. Determination of the Optical GAP in Thin Films of Amorphous Dilithium Phthalocyanine Using the Tauc and Cody Models

    Directory of Open Access Journals (Sweden)

    Jerry N. Reider-Burstin

    2012-08-01

    Full Text Available Semiconducting thin films were grown on quartz substrates and crystalline silicon wafers, using dilithium phthalocyanine and the organic ligands 2,6-dihydroxyanthraquinone and 2,6-diaminoanthraquinone as the starting compounds. The films, thus obtained, were characterized by Fourier Transform infrared (FTIR, fast atomic bombardment (FAB+ mass and ultraviolet-visible (UV-Vis spectroscopies. The surface morphology of these films was analyzed by means of atomic force microscopy (AFM and scanning electron microscopy (SEM. It was found that the temperature-dependent electric current in all cases showed a semiconductor behavior with conductivities on the order of 10−6·S cm−1, whereas the highest value corresponded to the thin film based upon the bidentate amine. The Tauc and Cody optical band gap values of thin films were calculated from the absorption coefficients and were found to be around 1.5 eV, with another strong band between 2.3 and 2.43 eV, arising from non-direct transitions. The curvature in the Tauc plot influencing the determination of the optical gap, the Tauc optical gap corresponding to the thicker film is smaller. The dependence of the Cody optical gap on the film thickness was negligible.

  14. The investigation of ZnO:Al2O3/metal composite back reflectors in amorphous silicon germanium thin film solar cells

    Institute of Scientific and Technical Information of China (English)

    Wang Guang-Hong; Zhao Lei; Yan Bao-Jun; Chen Jing-Wei; Wang Ge; Diao Hong-Wei; Wang Wen-Jing

    2013-01-01

    Different aluminum-doped ZnO (AZO)/metal composite thin films,including AZO/Ag/Al,AZO/Ag/nickelchromium alloy (NiCr),and AZO/Ag/NiCr/Al,are utilized as the back reflectors of p-i-n amorphous silicon germanium thin film solar cells.NiCr is used as diffusion barrier layer between Ag and Al to prevent mutual diffusion,which increases the short circuit current density of solar cell.NiCr and NiCr/Al layers are used as protective layers of Ag layer against oxidation and sulfurization,the higher efficiency of solar cell is achieved.The experimental results show that the performance of a-SiGe solar cell with AZO/Ag/NiCr/Al back reflector is best.The initial conversion efficiency is achieved to be 8.05%.

  15. Sub-micron gap in-plane micromechanical resonators based on low-temperature amorphous silicon thin-films on glass substrates

    International Nuclear Information System (INIS)

    In this work, high-frequency bulk mode resonators made from low stress hydrogenated amorphous silicon (a–Si:H) thin-films are demonstrated. The microelectromechanical structures are fabricated using surface micromachining techniques at a maximum processing temperature of 175 °C on glass substrates. The silicon thin-film based resonators presented here are temperature compatible with post processing on standard CMOS. The resonators are capacitively driven and sensed across 400 nm air gaps. A proof of concept design consisting of a 200 µm side length square has been selectively excited in the Lamé-mode at a characteristic vibration frequency of 13.64 MHz. The quality factor of the resonators is in the 103 range and the motional resistance was measured to be approximately 21.8 MΩ at a DC bias voltage of 40 V. (paper)

  16. Bias-induced migration of ionized donors in amorphous oxide semiconductor thin-film transistors with full bottom-gate and partial top-gate structures

    Directory of Open Access Journals (Sweden)

    Mallory Mativenga

    2012-09-01

    Full Text Available Bias-induced charge migration in amorphous oxide semiconductor thin-film transistors (TFTs confirmed by overshoots of mobility after bias stressing dual gated TFTs is presented. The overshoots in mobility are reversible and only occur in TFTs with a full bottom-gate (covers the whole channel and partial top-gate (covers only a portion of the channel, indicating a bias-induced uneven distribution of ionized donors: Ionized donors migrate towards the region of the channel that is located underneath the partial top-gate and the decrease in the density of ionized donors in the uncovered portion results in the reversible increase in mobility.

  17. Photoinduced superhydrophilicity of amorphous TiOx-like thin films by a simple room temperature sol-gel deposition and atmospheric plasma jet treatment

    International Nuclear Information System (INIS)

    A room temperature sol gel process of TTIP / iPrOH / H2O /HNO3 sol was applied for the deposition of functional Ti alkoxide thin films on glass and polymeric substrates (PEEK). The unheated – amorphous films become superhydrophilic after 7 minutes of UV exposure which deteriorates after one day of storage in dark, exhibiting stable amphiphilic behavior. Superhydrophilicity is also obtained after 5 min of atmospheric pressure Ar – O2 plasma jet treatment. As the plasma power and the oxygen content of the mixture of the treatment increase (70W, 3.2 -5% O2) the films high hydrophilicity is maintained for many days even in dark atmospheric conditions providing long term hydrophilic coatings

  18. Photoinduced superhydrophilicity of amorphous TiOx-like thin films by a simple room temperature sol-gel deposition and atmospheric plasma jet treatment

    Science.gov (United States)

    Vrakatseli, V. E.; Pagonis, E.; Amanatides, E.; Mataras, D.

    2014-11-01

    A room temperature sol gel process of TTIP / iPrOH / H2O /HNO3 sol was applied for the deposition of functional Ti alkoxide thin films on glass and polymeric substrates (PEEK). The unheated - amorphous films become superhydrophilic after 7 minutes of UV exposure which deteriorates after one day of storage in dark, exhibiting stable amphiphilic behavior. Superhydrophilicity is also obtained after 5 min of atmospheric pressure Ar - O2 plasma jet treatment. As the plasma power and the oxygen content of the mixture of the treatment increase (70W, 3.2 -5% O2) the films high hydrophilicity is maintained for many days even in dark atmospheric conditions providing long term hydrophilic coatings.

  19. Magnetic properties and amorphous-to-nanocrystalline transformation by thermal treatments in Fe84.3Si4P3B8Cu0.7 amorphous thin films

    International Nuclear Information System (INIS)

    Highlights: • High-BS alloy, prepared in thin films form. • As-prepared films display low coercivity, comparable to rapidly quenched ribbons. • Furnace annealed films show even lower coercivity while retaining a high saturation. • On annealing, a fully nanocrystalline state is achieved in thin films. - Abstract: Thin films of nominal composition Fe84.3Si4P3B8Cu0.7 have been prepared by sputtering from ribbons of the same alloy. Their microstructure has been studied by means of X-ray diffraction, differential scanning calorimetry and transmission electron microscopy, and reveals a partly amorphous state in the as-prepared samples. Their magnetic properties are soft and comparable to those measured on rapidly quenched ribbons. After annealing in furnace at temperatures up to 400 °C, their soft magnetic properties are improved thanks to the development of a fully nanocrystalline state. Annealing at higher temperature causes the coarsening of the α-Fe like grains, the development of hard magnetic phases and an increase of the coercive field

  20. Correlating Raman-spectroscopy and high-resolution transmission-electron-microscopy studies of amorphous/nanocrystalline multilayered silicon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gajovic, Andreja, E-mail: gajovic@irb.h [Ruder Boskovic Institute, POB 180, HR-1002 Zagreb (Croatia); Institute Jozef Stefan, Jamova 39, SI-1000 Ljubljana (Slovenia); Gracin, Davor; Juraic, Krunoslav; Sancho-Parramon, Jordi [Ruder Boskovic Institute, POB 180, HR-1002 Zagreb (Croatia); Ceh, Miran [Institute Jozef Stefan, Jamova 39, SI-1000 Ljubljana (Slovenia)

    2009-07-31

    The nanostructure of multilayered silicon thin films was studied using Raman spectroscopy (RS) and high-resolution transmission electron microscopy (HRTEM). Since the properties of nanocrystalline silicon layer depend on the size of the nanocrystals, an accurate determination of the crystallite sizes and the crystalline fraction is of primary importance. The average sizes of the nanocrystals estimated by RS, assuming bi-modal distribution of crystal sizes, were close to 2 nm and above 5-20 nm. HRTEM confirmed the existence of nanocrystals with a mean square value of around 2 nm and certain number of larger nanocrystals, embedded in an amorphous matrix. The correlation between the results obtained by these two techniques is discussed. The optical properties of measured samples corresponded to an amorphous-crystalline mixture with indication of confinement effects compatible with 2 nm nanocrystals.

  1. Optical properties change in amorphous (As2S3)0.87Sb0.13 thin films by photo and thermal induced process

    International Nuclear Information System (INIS)

    Research highlights: → The article describes the optical properties change due to light illumination and thermal annealing on (As2S3)0.87Sb0.13 thin film. → The reduction of optical bandgap (photodarkening) due to light illumination is due to the creation of homopolar bonds whereas increase in optical bandgap (photobleaching) due to annealing is due to the increase in heteropolar bonds. → New bonds are formed due to the chemical bond redistribution which can be observed from the XPS core level spectra and raman shift. - Abstract: Exposure with above band gap light and thermal annealing at a temperature near to glass transition temperature, of thermally evaporated amorphous (As2S3)0.87Sb0.13 thin films of 1 μm thickness, were found to be accompanied by structural effects, which in turn, lead to changes in the optical properties. The optical properties of thin films induced by illumination and annealing were studied by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Photo darkening or photo bleaching was observed in the film depending upon the conditions of the light exposure or annealing. These changes of the optical properties are assigned to the change of homopolar bond densities.

  2. Furnace and rapid thermal crystallization of amorphous GexSi1-x and Si for thin film transistors

    NARCIS (Netherlands)

    Rem, J.B.; Leuw, de M.C.V.; Holleman, J.; Verweij, J.F.

    1997-01-01

    The crystallization behavior of polycrystalline silicon (Si) and germanium-silicon alloys (GexSi1−x) from SiH4 and GeH4, where x is in the range of 0-0.32, has been investigated for thin film transistor (TFT) applications. Furnace anneals as well as rapid thermal anneal (RTA) and combinations of the

  3. An investigation of optimal interfacial film condition for Cu-Mn alloy based source/drain electrodes in hydrogenated amorphous silicon thin film transistors

    Directory of Open Access Journals (Sweden)

    Haruhiko Asanuma

    2012-06-01

    Full Text Available To aid in developing next generation Cu-Mn alloy based source/drain interconnects for thin film transistor liquid crystal displays (TFT-LCDs, we have investigated the optimal structure of a pre-formed oxide layer on phosphorus doped hydrogenated amorphous silicon (n+a-Si:H that does not degrade TFT electrical properties. We use transmission electron microscopy (TEM and electron energy loss spectroscopy (EELS to examine composition depth profiles of and structural information for the Cu-Mn alloy/n+a-Si:H interface region. In aiming to achieve the same electrical properties as those of TFTs having conventional Mo source/drain electrodes, we have obtained three important findings: (1 in typical TFT-LCD manufacturing processes, no Mn complex oxide layer is formed because Mn cannot diffuse substantially into an n+a-Si:H surface during low temperature (below 300°C processes and the growth of Mn complex oxide layer would also be limited by the absence of excess oxygen species; (2 a pre-formed silicon oxide layer much thicker than 1 nm severely degrades TFT electrical properties and therefore an ultrathin (≈1 nm silicon oxide layer is required to prevent the degradation; (3 Cu diffuses into an n+a-Si:H layer at oxygen-deficient spots and thus uniform surface oxidation is required to prevent the diffusion.

  4. Increasing the deposition rate of microcrystalline and amorphous silicon thin films for photovoltaic applications - Phase IV: 1997-1999

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-07-01

    This report on behalf of the Swiss Federal Office of Energy (SFOE) describes Phase IV of the project to test the feasibility and usefulness of Very High Frequency (VHF) plasma operation in large-area reactors suitable for the production of solar cell panels using thinly-deposited micro-crystalline silicon films. The report discusses the results of fast-deposition tests and trials using high-current DC arcs and VHF techniques to obtain deposition rates and film quality suitable for industrial processes for the production of thin-film solar cell panels. The effects of alternative plasma chemistry were also studied by adding silicon tetrafluoride to the standard silane/hydrogen mixtures. The report is concluded with calculations for optimum radio-frequency (RF) contact configuration for large area reactors with 1 m{sup 2} electrodes.

  5. Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films

    International Nuclear Information System (INIS)

    We investigated the effects of residual hydrogen in sputtering atmosphere on subgap states and carrier transport in amorphous In-Ga-Zn-O (a-IGZO) using two sputtering systems with different base pressures of ∼10−4 and 10−7 Pa (standard (STD) and ultrahigh vacuum (UHV) sputtering, respectively), which produce a-IGZO films with impurity hydrogen contents at the orders of 1020 and 1019 cm−3, respectively. Several subgap states were observed by hard X-ray photoemission spectroscopy, i.e., peak-shape near-valence band maximum (near-VBM) states, shoulder-shape near-VBM states, peak-shape near-conduction band minimum (near-CBM) states, and step-wise near-CBM states. It was confirmed that the formation of these subgap states were affected strongly by the residual hydrogen (possibly H2O). The step-wise near-CBM states were observed only in the STD films deposited without O2 gas flow and attributed to metallic In. Such step-wise near-CBM state was not detected in the other films including the UHV films even deposited without O2 flow, substantiating that the metallic In is segregated by the strong reduction effect of the hydrogen/H2O. Similarly, the density of the near-VBM states was very high for the STD films deposited without O2. These films had low film density and are consistent with a model that voids in the amorphous structure form a part of the near-VBM states. On the other hand, the UHV films had high film densities and much less near-VBM states, keeping the possibility that some of the near-VBM states, in particular, of the peak-shape ones, originate from –OH and weakly bonded oxygen. These results indicate that 2% of excess O2 flow is required for the STD sputtering to compensate the effects of the residual hydrogen/H2O. The high-density near-VBM states and the metallic In segregation deteriorated the electron mobility to 0.4 cm2/(V s)

  6. Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Haochun; Ishikawa, Kyohei; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio, E-mail: kamiya.t.aa@m.titech.ac.jp [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Ueda, Shigenori [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba-city, Ibaraki 305-0047 (Japan); Ohashi, Naoki [Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); National Institute for Materials Science, 1-2-1 Sengen, Tsukuba-city, Ibaraki 305-0047 (Japan); Kumomi, Hideya [Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2015-11-28

    We investigated the effects of residual hydrogen in sputtering atmosphere on subgap states and carrier transport in amorphous In-Ga-Zn-O (a-IGZO) using two sputtering systems with different base pressures of ∼10{sup −4} and 10{sup −7 }Pa (standard (STD) and ultrahigh vacuum (UHV) sputtering, respectively), which produce a-IGZO films with impurity hydrogen contents at the orders of 10{sup 20} and 10{sup 19 }cm{sup −3}, respectively. Several subgap states were observed by hard X-ray photoemission spectroscopy, i.e., peak-shape near-valence band maximum (near-VBM) states, shoulder-shape near-VBM states, peak-shape near-conduction band minimum (near-CBM) states, and step-wise near-CBM states. It was confirmed that the formation of these subgap states were affected strongly by the residual hydrogen (possibly H{sub 2}O). The step-wise near-CBM states were observed only in the STD films deposited without O{sub 2} gas flow and attributed to metallic In. Such step-wise near-CBM state was not detected in the other films including the UHV films even deposited without O{sub 2} flow, substantiating that the metallic In is segregated by the strong reduction effect of the hydrogen/H{sub 2}O. Similarly, the density of the near-VBM states was very high for the STD films deposited without O{sub 2}. These films had low film density and are consistent with a model that voids in the amorphous structure form a part of the near-VBM states. On the other hand, the UHV films had high film densities and much less near-VBM states, keeping the possibility that some of the near-VBM states, in particular, of the peak-shape ones, originate from –OH and weakly bonded oxygen. These results indicate that 2% of excess O{sub 2} flow is required for the STD sputtering to compensate the effects of the residual hydrogen/H{sub 2}O. The high-density near-VBM states and the metallic In segregation deteriorated the electron mobility to 0.4 cm{sup 2}/(V s)

  7. Amorphous to fcc-polycrystal transition in Ge2Sb2Te5 thin films studied by electrical measurements: Data analysis and comparison with direct microscopy observations

    International Nuclear Information System (INIS)

    We experimentally investigate the isothermal amorphous-to-fcc polycrystalline phase transition process in amorphous Ge2Sb2Te5 thin films prepared by sputtering. The amorphous layers were either as deposited or formed by Ar+ ion implantation after crystallization at 300 deg. C. The kinetics of the amorphous-to-polycrystal transition are analyzed through electrical measurements, in which the Johnson-Mehl-Avrami-Kolmogorov theory is employed. The procedure to extract the kinetics of the phase transition from conductivity versus time data is carefully discussed and compared to data of cross-sectional transmission electron microscopy images versus anneal time. By following this proposed procedure, the nucleation and growth parameters, and the activation energies have been determined. Results indicate that the process of isothermal crystallization in Ge2Sb2Te5 takes place in two stages, in which the Avrami exponent changes in the range from 3 to 1. These results are understood in terms of modifications in the kinetics of the phase transition.

  8. Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature

    CERN Document Server

    Park, M G; Hong, B; Kim, Y T; Yoon, D H

    2002-01-01

    In this article, we investigated the dependence of optical and electrical properties of hydrogenated amorphous silicon carbide (a-SiC:H) films on annealing temperature (T sub a) and radio frequency (rf) power. The substrate temperature (T sub s) was 250 deg. C, the rf power was varied from 30 to 400 W, and the range of T sub a was from 400 to 600 deg. C. The a-SiC:H films were deposited by using the plasma enhanced chemical vapor deposition system on Corning 7059 glasses and p-type Si (100) wafers with a SiH sub 4 +CH sub 4 gas mixture. The experimental results have shown that the optical bandgap energy (E sub g) of the a-SiC:H thin films changed little on the annealing temperature while E sub g increased with the rf power. The Raman spectrum of the thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs. The current-voltage characteristics have shown good electrical properties in relation to the annealed films.

  9. Photo-induced optical bleaching in Ge12Sb25S63 amorphous chalcogenide thin films: effect of 532 nm laser illumination

    Science.gov (United States)

    Naik, Ramakanta; Jena, Shuvendu; Ganesan, R.; Sahoo, N. K.

    2015-03-01

    The photo-induced effects of Ge12Sb25S63 films illuminated with 532 nm laser light are investigated from transmission spectra measured by FTIR spectroscopy. The material exhibits photo-bleaching (PB) when exposed to band gap light for a prolonged time in a vacuum. The PB is ascribed to structural changes inside the film as well as surface photo-oxidation. The amorphous nature of thin films was detected by x-ray diffraction. The chemical composition of the deposited thin films was examined by energy dispersive x-ray analysis (EDAX). The refractive indices of the films were obtained from the transmission spectra based on an inverse synthesis method and the optical band gaps were derived from optical absorption spectra using the Tauc plot. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple-DiDomenico model. It was found that the mechanism of the optical absorption follows the rule of the allowed non-direct transition. Raman and x-ray photoelectron spectra (XPS) were measured and decomposed into several peaks that correspond to the different structural units which support the optical changes.

  10. Thin films of hydrogenated amorphous carbon (a-C:H) obtained through chemical vapor deposition assisted by plasma

    International Nuclear Information System (INIS)

    Films of hydrogenated amorphous carbon (a-C:H) were deposited using one source of microwave plasma with magnetic field (type ECR), using mixtures of H2/CH4 in relationship of 80/20 and 95/05 as precursory gases, with work pressures of 4X10-4 to 6x10-4 Torr and an incident power of the discharge of microwaves with a constant value of 400 W. It was analyzed the influence among the properties of the films, as the deposit rate, the composition and the bonding types, and the deposit conditions, such as the flow rates of the precursory gases and the polarization voltage of the sample holders. (Author)

  11. Optical waveguide based on amorphous Er{sup 3+}-doped Ga-Ge-Sb-S(Se) pulsed laser deposited thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.f [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Nemec, P. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Jurdyc, A.M [Laboratoire de Physico-Chimie des Materiaux Luminescents (LPCML), UMR CNRS 5620, Universite Claude Bernard-Lyon 1, Villeurbanne (France); Zhang, S.; Charpentier, F. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Lhermite, H. [IETR-Microelectronique, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Charrier, J. [FOTON, UMR 6082-ENSSAT, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Guin, J.P. [LARMAUR, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Moreac, A. [Institut de Physique de Rennes, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Frumar, M. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Adam, J.-L. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France)

    2010-06-30

    Amorphous chalcogenide films play a motivating role in the development of integrated planar optical circuits due to their potential functionality in near infrared (IR) and mid-IR spectral regions. More specifically, the photoluminescence of rare earth ions in amorphous chalcogenide films can be used in laser and amplifier devices in the IR spectral domain. The aim of the present investigation was to optimize the deposition conditions for the fabrication of undoped and Er{sup 3+} doped sulphide and selenide thin films with nominal composition Ga{sub 5}Ge{sub 20}Sb{sub 10}S(Se){sub 65} or Ga{sub 5}Ge{sub 23}Sb{sub 5}S{sub 67} by pulsed laser deposition (PLD). The study of compositional, morphological and structural characteristics of the layers was realized by scanning electron microscopy-energy dispersive spectroscopy, atomic force microscopy and Raman spectroscopy analyses, respectively. Some optical properties (transmittance, index of refraction, optical band gap, etc.) of prepared chalcogenide films and optical losses were investigated as well. The clear identification of near-IR photoluminescence of Er{sup 3+} ions was obtained for both selenide and sulphide films. The decay of the {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} transition at 1.54 {mu}m in Er{sup 3+} doped Ga{sub 5}Ge{sub 20}Sb{sub 10}S{sub 65} PLD sulphide films was studied to assess the effects of film thickness, rare earth concentration and multilayer PLD deposition on their spectroscopic properties.

  12. Non-Stoichiometric Amorphous Indium Selenide Thin Films as a Buffer Layer for CIGS Solar Cells with Various Temperatures in Rapid Thermal Annealing.

    Science.gov (United States)

    Yoo, Myoung Han; Kim, Nam-Hoon

    2016-05-01

    The conventional structure of most of copper indium gallium diselenide (Culn(1-x)Ga(x)Se2, CIGS) solar cells includes a CdS thin film as a buffer layer. Cd-free buffer layers have attracted great interest for use in photovoltaic applications to avoid the use of hazardous and toxic materials. The RF magnetron sputtering method was used with an InSe2 compound target to prepare the indium selenide precursor. Rapid thermal annealing (RTA) was conducted in ambient N2 gas to control the concentration of volatile Se from the precursor with a change in temperature. The nature of the RTA-treated indium selenide thin films remained amorphous under annealing temperatures of ≤ 700 degrees C. The Se concentration of the RTA-treated specimens demonstrated an opposite trend to the annealing temperature. The optical transmittance and band gap energies were 75.33% and 2.451-3.085 eV, respectively, and thus were suitable for the buffer layer. As the annealing temperature increased, the resistivity decreased by an order-of-magnitude from 10(4) to 10(1) Ω-cm. At lower Se concentrations, the conductivity abruptly changed from p-type to n-type without crystallite formation in the amorphous phase, with the carrier concentration in the order of 10(17) cm(-3). PMID:27483873

  13. Infrared optical properties of amorphous and nanocrystalline Ta{sub 2}O{sub 5} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bright, T. J.; Watjen, J. I.; Zhang, Z. M. [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Muratore, C. [Nanoelectronic Materials Branch, Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright Patterson AFB, Ohio 45433 (United States); Department of Chemical and Materials Engineering, University of Dayton, Dayton, Ohio 45469 (United States); Voevodin, A. A. [Nanoelectronic Materials Branch, Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright Patterson AFB, Ohio 45433 (United States); Koukis, D. I.; Tanner, D. B. [Department of Physics, University of Florida, Gainesville, Florida 32611 (United States); Arenas, D. J. [Department of Physics, University of North Florida, Jacksonville, Florida 32254 (United States)

    2013-08-28

    The optical constants of tantalum pentoxide (Ta{sub 2}O{sub 5}) are determined in a broad spectral region from the visible to the far infrared. Ta{sub 2}O{sub 5} films of various thicknesses from approximately 170 to 1600 nm are deposited using reactive magnetron sputtering on Si substrates. X-ray diffraction shows that the as-deposited films are amorphous, and annealing in air at 800 °C results in the formation of nanocrystalline Ta{sub 2}O{sub 5}. Ellipsometry is used to obtain the dispersion in the visible and near-infrared. Two Fourier-transform infrared spectrometers are used to measure the transmittance and reflectance at wavelengths from 1 to 1000 μm. The surface topography and microstructure of the samples are examined using atomic force microscopy, confocal microscopy, and scanning electron microscopy. Classical Lorentz oscillators are employed to model the absorption bands due to phonons and impurities. A simple model is introduced to account for light scattering in the annealed films, which contain micro-cracks. For the unannealed samples, an effective-medium approximation is used to take into account the adsorbed moisture in the film and a Drude free-electron term is also added to model the broad background absorption.

  14. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    International Nuclear Information System (INIS)

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CNx) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CNx films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N2/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, Vs, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at Vs ≥ 60 V, Vs ≥ 100 V, and Vs = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of Vs for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all Vs, while CNx films deposited by MFMS showed residual stresses up to −4.2 GPa. Nanoindentation showed a significant increase in film

  15. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bakoglidis, Konstantinos D., E-mail: konba@ifm.liu.se; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2015-09-15

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2

  16. Radiation resistance studies of amorphous silicon films

    Science.gov (United States)

    Woodyard, James R.; Payson, J. Scott

    1989-01-01

    Hydrogenated amorphous silicon thin films were irradiated with 2.00 MeV helium ions using fluences ranging from 1E11 to 1E15 cm(-2). The films were characterized using photothermal deflection spectroscopy and photoconductivity measurements. The investigations show that the radiation introduces sub-band-gap states 1.35 eV below the conduction band and the states increase supralinearly with fluence. Photoconductivity measurements suggest the density of states above the Fermi energy is not changing drastically with fluence.

  17. Coherent phonon modes of crystalline and amorphous Ge2Sb2Te5 thin films: A fingerprint of structure and bonding

    International Nuclear Information System (INIS)

    Femtosecond optical pump-probe measurements have been made upon epitaxial, polycrystalline, and amorphous thin films of Ge2Sb2Te5 (GST). A dominant coherent optical phonon mode of 3.4 THz frequency is observed in time-resolved anisotropic reflectance (AR) measurements of epitaxial films, and is inferred to have 3-dimensional T2-like character based upon the dependence of its amplitude and phase on pump and probe polarization. In contrast, the polycrystalline and amorphous phases exhibit a comparatively weak mode of about 4.5 THz frequency in both reflectivity (R) and AR measurements. Raman microscope measurements confirm the presence of the modes observed in pump-probe measurements, and reveal additional modes. While the Raman spectra are qualitatively similar for all three phases of GST, the mode frequencies are found to be different within experimental error, ranging from 3.2 to 3.6 THz and 4.3 to 4.7 THz, indicating that the detailed crystallographic structure has a significant effect upon the phonon frequency. While the lower frequency (3.6 THz) mode of amorphous GST is most likely associated with GeTe4 tetrahedra, modes in epitaxial (3.4 THz) and polycrystalline (3.2 THz) GST could be associated with either GeTe6 octahedra or Sb-Te bonds within defective octahedra. The more polarizable Sb-Te bonds are the most likely origin of the higher frequency (4.3–4.7 THz) mode, although the influence of Te-Te bonds cannot be excluded. The effect of high pump fluence, which leads to irreversible structural changes, has been explored. New modes with frequency of 3.5/3.6 THz in polycrystalline/amorphous GST may be associated with Sb2Te3 or GeTe4 tetrahedra, while a 4.2 THz mode observed in epitaxial GST may be related to segregation of Sb

  18. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  19. Influence of Doping and Annealing on Structural, Optical and Electrical properties Amorphous ZnO Thin Films Prepared by PLD

    Directory of Open Access Journals (Sweden)

    Azhar AbduAlwahab Ali

    2015-03-01

    Full Text Available The optical gap of the films was calculated from the curve of absorption coefficient (αhע2 vs. hע and was found to be 3.8 eV at room temperature, and this value decreases from 3.8 to 3.58 eV with increasing of annealing temperature up to 473-673 K, and increases with the Ga doping. λ cutoff was calculated for ZnO and showed an increase with increasing annealing temperature and shifting to longer wavelength, while with doping the λcutoff shifted to shorter wavelength. The photoluminescence (PL results indicate that the pure ZnO thin films grown at room temperature show strong peaks at 640 nm , but  GaO doped ZnO films showed a band emission in the yellow-green spectral region (380 to 450nm.

  20. Effect of 50MeV Li3+ ion irradiation on structural, optical and electrical properties of amorphous Se95Zn5 thin films

    International Nuclear Information System (INIS)

    Present work focuses on the effect of swift heavy ion (SHI) irradiation of 50MeV Li3+ ions by varying the fluencies in the range of 1×1012 to 5×1013 ions/cm2 on the morphological, structural, optical and electrical properties of amorphous Se95Zn5 thin films. Thin films of ~250nm thickness were deposited on cleaned glass substrates by thermal evaporation technique. X-ray diffraction (XRD) analysis shows the pristine thin film of Se95Zn5 growsin hexagonal phase structure. Also it was found that the small peak observed in XRD spectra vanishes after SHI irradiation indicates the defects of the material increases. The optical parameters: absorption coefficient (α), extinction coefficient (K), refractive index (n) optical band gap (Eg) and Urbach’s energy (EU) are determined from optical absorption spectra data measured from spectrophotometry in the wavelength range 200-1000nm. It was found that the values of absorption coefficient, refractive index and extinction coefficient increases while the value optical band gap decreases with the increase of ion fluence. This post irradiation change in the optical parameters was interpreted in terms of bond distribution model. Electrical properties such as dc conductivity and temperature dependent photoconductivity of investigated thin films were carried out in the temperature range 309-370 K. Analysis of data shows activation energy of dark current is greater as compared to activation energy photocurrent. The value of activation energy decreases with the increase of ion fluence indicates that the defect density of states increases.Also it was found that the value of dc conductivity and photoconductivity increases with the increase of ion fluence

  1. In situ noise measurements on ion bombarded thin films: 1/f-noise as a fingerprint for amorphization

    Energy Technology Data Exchange (ETDEWEB)

    Noske, Matthias; Trautvetter, Moritz; Ziemann, Paul [Institut fuer Festkoerperphysik, Universitaet Ulm (Germany)

    2009-07-01

    As has been experimentally demonstrated, the crystalline binary alloy In{sub 2}Au can be transformed into an amorphous state by low temperature ion irradiation. This transformation can be followed by measuring the ion induced increase of the electrical resistance as a function of the ion fluence. While this increase can be attributed to the built-up of static disorder, fluctuating atomic configurations may be present as well leading to resistance fluctuation and, as a consequence, to 1/f noise. To test such a possibility, patterned AuIn{sub 2} films were irradiated with 350 keV Ar{sup +} ions of various fluences up to 10{sup 15}ions/cm{sup 2} at 85 K. During the stepwise amorphization noise density SR spectra of the 1/f noise were taken by applying a correlation measurement technique{sup 2} allowing detection of signals below the thermal noise. It could be shown that the spectral noise density is maximal at the percolation limit whereas the resistance approaches its final value.

  2. Influence of Increasing Deposition Temperature on Electrical Properties of Amorphous Carbon Thin Film Prepared by Aerosol-Assisted Thermal CVD

    International Nuclear Information System (INIS)

    This paper reports on the successful deposition of p-type semiconducting amorphous carbon (paC) films fabricated onto the glass substrate by Aerosol-Assisted Thermal Chemical Vapor Deposition (CVD) using natural source of camphor oil as the precursor material. The analyze reveal that conductivity and resistivity shows some changes at different deposition temperature, that is the conductivity increase as temperature increase from 350 to 550 degree Celsius, but drop slightly at 550 degree Celsius. Other than that, optical and structural properties were also characterized by using UV-VIS-NIR system and Atomic Force Microscopy. The same trend of optical and electrical can be seen when the measurement from the Taucs plot expose a decreasing value of optical band gap as temperature increase, but slightly increase when temperature increase to 550 degree Celsius. (author)

  3. The phase-change kinetics of amorphous Ge2Sb2Te5 and device characteristics investigated by thin-film mechanics

    International Nuclear Information System (INIS)

    For high switching speed and high reliability of phase-change random access memory (PcRAM), we need to identify materials that enable fast crystallization at elevated temperatures but are stable at and above room temperature. Achieving this goal requires a breakthrough in our understanding of the unique crystallization kinetics of amorphous phase change materials as a fragile glass, described as the non-Arrhenius behavior of atomic mobility. It is a highly rewarding task to unravel the unconventional crystallization kinetics and related properties, because these properties can be utilized to predict the device characteristics. This manuscript utilizes the thin-film mechanics to investigate the crystallization kinetics of amorphous Ge2Sb2Te5 phase-change materials doped with Al, Bi, C and N, which is an effective method to analyze the structural changes in amorphous materials. Crystallization temperature, super-cooled liquid region, glass transition temperature and fragility are measured to describe the crystallization kinetics tuned by doping; characteristic fragile-to-strong transition is observed for C and N dopings due to their structural feature as an interstitial dopant. Consequently, doping effects on the phase stability and atomic mobility manifested by the crystallization temperature and the super-cooled liquid region (or 1/fragility) successfully correspond with PcRAM characteristics, i.e., reliability and switching speed, respectively

  4. Ultrafast crystalline-to-amorphous phase transition in Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide alloy thin film using single-shot imaging spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Takeda, Jun, E-mail: jun@ynu.ac.jp; Oba, Wataru; Minami, Yasuo; Katayama, Ikufumi [Department of Physics, Graduate School of Engineering, Yokohama National University, Yokohama 240-8501 (Japan); Saiki, Toshiharu [Graduate School of Science and Technology, Keio University, Yokohama 223-8522 (Japan)

    2014-06-30

    We have observed an irreversible ultrafast crystalline-to-amorphous phase transition in Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide alloy thin film using broadband single-shot imaging spectroscopy. The absorbance change that accompanied the ultrafast amorphization was measured via single-shot detection even for laser fluences above the critical value, where a permanent amorphized mark was formed. The observed rise time to reach the amorphization was found to be ∼130–200 fs, which was in good agreement with the half period of the A{sub 1} phonon frequency in the octahedral GeTe{sub 6} structure. This result strongly suggests that the ultrafast amorphization can be attributed to the rearrangement of Ge atoms from an octahedral structure to a tetrahedral structure. Finally, based on the dependence of the absorbance change on the laser fluence, the stability of the photoinduced amorphous phase is discussed.

  5. Spectroscopic ellipsometry-based study of optical properties of amorphous and crystalline ZnSnO alloys and Zn2SnO4 thin films grown using sputtering deposition: Dielectric function and subgap states

    Science.gov (United States)

    Ko, Kun Hee; So, Hyeon Seob; Jung, Dae Ho; Park, Jun Woo; Lee, Hosun

    2016-04-01

    We investigated the optical properties of amorphous and crystalline zinc tin oxide (ZTO) thin films grown on SiO2/Si substrates with varying compositions via a co-sputtering deposition method at room temperature. The co-sputtering targets consist of SnO2 and ZnO. By varying the relative power ratio of the two targets, we demonstrate the ability to control the Sn and Zn composition of the resulting ZTO thin films. The ratio of [Sn]/([Sn] + [Zn]) atomic compositions was estimated at 11%, 29%, 42%, 54%, and 60%. Using a 600 °C annealing process, the as-grown amorphous ZTO films were transformed into crystalline ZTO films. The dielectric functions were obtained based on the measured ellipsometric angles, ψ and Δ. We determined the dielectric functions, absorption coefficients, and optical gap energies of ZTO thin films with varying compositions. The dielectric functions, absorption coefficients, and optical gap energies of amorphous and crystalline Zn2SnO4 thin films were obtained at 29 at. % of Sn. Subgap states at 1.6 eV (A) and 2.8 eV (B) of ZnSnO alloys and Zn2SnO4 films were found in the imaginary part of the dielectric function spectra. The subgap state intensities were reduced via a nitrogen gas annealing. Possible origins of the observed subgap states will be discussed.

  6. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon

    Science.gov (United States)

    Zanatta, A. R.; Kordesch, M. E.

    2014-08-01

    Amorphous (a-)Si-based materials always attracted attention of the scientific community, especially after their use in commercial devices like solar cells and thin film transistors in the 1980s. In addition to their technological importance, the study of a-Si-based materials also present some interesting theoretical-practical challenges. Their crystallization as induced by metal species is one example, which is expected to influence the development of electronic-photovoltaic devices. In fact, the amorphous-to-crystalline transformation of the a-SiAl system has been successfully applied to produce solar cells suggesting that further improvements can be achieved. Stimulated by these facts, this work presents a comprehensive study of the a-SiAl system. The samples, with Al contents in the ˜0-15 at. % range, were made in the form of thin films and were characterized by different spectroscopic techniques. The experimental results indicated that: (a) increasing amounts of Al changed both the atomic structure and the optical properties of the samples; (b) thermal annealing induced the crystallization of the samples at temperatures that depend on the Al concentration; and (c) the crystallization process was also influenced by the annealing duration and the structural disorder of the samples. All of these aspects were addressed in view of the existing models of the a-Si crystallization, which were also discussed to some extent. Finally, the ensemble of experimental results suggest an alternative method to produce cost-effective crystalline Si films with tunable structural-optical properties.

  7. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon

    International Nuclear Information System (INIS)

    Amorphous (a-)Si-based materials always attracted attention of the scientific community, especially after their use in commercial devices like solar cells and thin film transistors in the 1980s. In addition to their technological importance, the study of a-Si-based materials also present some interesting theoretical-practical challenges. Their crystallization as induced by metal species is one example, which is expected to influence the development of electronic-photovoltaic devices. In fact, the amorphous-to-crystalline transformation of the a-SiAl system has been successfully applied to produce solar cells suggesting that further improvements can be achieved. Stimulated by these facts, this work presents a comprehensive study of the a-SiAl system. The samples, with Al contents in the ∼0−15 at. % range, were made in the form of thin films and were characterized by different spectroscopic techniques. The experimental results indicated that: (a) increasing amounts of Al changed both the atomic structure and the optical properties of the samples; (b) thermal annealing induced the crystallization of the samples at temperatures that depend on the Al concentration; and (c) the crystallization process was also influenced by the annealing duration and the structural disorder of the samples. All of these aspects were addressed in view of the existing models of the a-Si crystallization, which were also discussed to some extent. Finally, the ensemble of experimental results suggest an alternative method to produce cost-effective crystalline Si films with tunable structural-optical properties

  8. On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon

    Energy Technology Data Exchange (ETDEWEB)

    Zanatta, A. R. [Instituto de Física de São Carlos, Universidade de São Paulo, São Carlos, SP 13566-590 (Brazil); Kordesch, M. E. [Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701 (United States)

    2014-08-21

    Amorphous (a-)Si-based materials always attracted attention of the scientific community, especially after their use in commercial devices like solar cells and thin film transistors in the 1980s. In addition to their technological importance, the study of a-Si-based materials also present some interesting theoretical-practical challenges. Their crystallization as induced by metal species is one example, which is expected to influence the development of electronic-photovoltaic devices. In fact, the amorphous-to-crystalline transformation of the a-SiAl system has been successfully applied to produce solar cells suggesting that further improvements can be achieved. Stimulated by these facts, this work presents a comprehensive study of the a-SiAl system. The samples, with Al contents in the ∼0−15 at. % range, were made in the form of thin films and were characterized by different spectroscopic techniques. The experimental results indicated that: (a) increasing amounts of Al changed both the atomic structure and the optical properties of the samples; (b) thermal annealing induced the crystallization of the samples at temperatures that depend on the Al concentration; and (c) the crystallization process was also influenced by the annealing duration and the structural disorder of the samples. All of these aspects were addressed in view of the existing models of the a-Si crystallization, which were also discussed to some extent. Finally, the ensemble of experimental results suggest an alternative method to produce cost-effective crystalline Si films with tunable structural-optical properties.

  9. Influence of post-deposition heat treatment on optical properties derived from UV–vis of cadmium telluride (CdTe) thin films deposited on amorphous substrate

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • Annealing-induced change in optical parameters of CdTe film was derived from UV–vis study. • Optical constants of the films were evaluated using Swanepoel method. • Dispersion energy data obeyed the single oscillator of the Wemple−Didomenico model. • Cd deficiency of the film confirmed the p-type conductive nature. - Abstract: In this work, we report on post-deposition heat treatment (annealing)-induced change in optical properties derived from UV–vis study of CdTe thin films prepared on amorphous glass substrate by electron beam evaporation technique. Annealing effect gives rise to the enhancement in crystalline nature (zinc blende structure) of CdTe films with (1 1 1) preferred orientation. The average transmittance was increased with the annealing temperature and the slight shift in transmission threshold towards higher wavelength region revealed the systematic reduction in optical energy band gap. The existence of shallow level just below the conduction band, within the band gap was identified in the range of 0.23 and 0.14 eV for the films annealed at 200 and 450 °C, respectively. The optical quality of deposited films was confirmed by the photoluminescence study. In addition, the scanning electron microscopic measurement supports the result of X-ray diffraction study. The Swanepoel, Hervé-Vandamme, and Wemple−DiDomenico models have been employed to evaluate the various optical parameters of CdTe films. These results are correlated well with other physical properties and discussed with the possible concepts underlying the phenomena

  10. Thin Film Microbatteries

    International Nuclear Information System (INIS)

    aerosol spray coating, for one or more components of the battery. The active materials used for the thin film cathodes and anodes are familiar intercalation compounds, but the microstructures and often the cycling properties of the thin films may be quite distinct from those of battery electrodes formed from powders. The thin film cathodes are dense and homogeneous with no added phases such as binders or electrolytes. When deposited at ambient temperatures, the films of cathodes, such as LiCoO2, V2O5, LiMn2O4, LiFePO4 are amorphous or nanocrystalline. But even in this form, they often act as excellent cathodes with large specific capacities and good stability for hundreds to thousands of cycles. Annealing the cathode films at temperatures of 300 to 800 C may be used to induce crystallization and grain growth of the desired intercalation compound. Crystallizing the cathode film generally improves the Li chemical diffusivity in the electrode material, and hence the power delivered by the battery, by 1-2 orders of magnitude. The microstructure is also tailored by the deposition and heat treatment. Figure 3 shows a fracture edge of an annealed LiCoO2 cathode film on an alumina substrate. The columnar microstructure, which is typical of a vapor deposited film, sinters at high temperatures leaving small fissures between the dense columns. Such crystalline films also may have a preferred crystallographic orientation. For LiCoO2 films the crystallographic texture differs for films deposited by sputtering versus pulse laser ablation processes. To improve the manufacturability of the thin film batteries, it would be beneficial to eliminate or minimize the temperature or duration of the annealing step. Several efforts have lead to low temperature fabrication of thin film batteries on polyimide substrates, but the battery capacity and rate are lower than those treated at high temperatures. For the battery anode, many designs use a vapor-deposited metallic lithium film as both the

  11. Fabrication of amorphous Zr48Cu36Al8Ag8 thin films by ion beam sputtering and their corrosion behavior in SBF for bio implants

    International Nuclear Information System (INIS)

    Highlights: •The deposited alloys were shown to have amorphous structure. •Coated specimen had higher corrosion resistance in SBF. •Coatings were non-cytotoxic in nature. -- Abstract: The growth of multi component amorphous Zr48Cu36Al8Ag8 thin film metallic glasses (TFMGs) using single target ion beam sputtering has been systematically investigated. The as prepared sputtering target was crystalline in nature. The presence of the constituent elements was identified from EPMA and AES analysis. An atomically disordered structure was observed by micro X-ray diffraction, electron diffraction and high resolution transmission electron microscopy. Glassy films with atomically smooth surfaces of the order of 0.4 nm with higher nanohardness of 9.33 GPa and Young’s modulus of 117 GPa compared to their crystalline substrate was observed from nanoindentation analysis. The study of in vitro corrosion of these coatings on implantable 316L stainless steel substrate in simulated body fluid (SBF) indicated that the as sputtered specimen had higher corrosion resistance without any localized pitting

  12. Effect of processing temperature on the structural, electronic and electrical properties of solution-processed amorphous Ge–In–Sn–O thin-film transistors

    International Nuclear Information System (INIS)

    We report a novel GeInSnOx (GeITO) thin-film transistor (TFT) synthesized by a solution process, utilizing Ge as a charge carrier suppressor and amorphization-promoter, and the dependence of its microstructure, electronic structure and electrical properties on sintering temperature. The amorphous structure was maintained regardless of the sintering temperature. As the sintering temperature increased, the amount of oxygen vacancies increased and GeO2 bonds transformed into GeO bonds near the film surface above 400 °C. In addition, the In 5sp/Sn 5sp states appeared to act as the dominant electron source in the GeITO channel layers with increasing sintering temperature. These behaviours influenced TFT performances: the saturation mobility was increased from 0.004 to 6.4 cm2 V−1 s−1, while the threshold voltage was shifted in the negative direction by increasing the sintering temperature, which demonstrates the high sensitivity of the solution-deposited GeITO to the processing temperature. (paper)

  13. Influence of oxidation temperature on photoluminescence and electrical properties of amorphous thin film SiC:H:O+Tb

    Energy Technology Data Exchange (ETDEWEB)

    Gordienko, S.O.; Nazarov, A.N.; Rusavsky, A.V.; Vasin, A.V.; Gomeniuk, Yu.V.; Lysenko, V.S.; Strelchuk, V.V.; Nikolaenko, A.S. [Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 41, 03028 Kyiv (Ukraine); Ashok, S. [The Pennsylvania State University, Department of Engineering Science, 212 Earth and Engineering Science Bldg., University Park, PA 16802 (United States)

    2011-09-15

    The influence of low-temperature oxidation on chemical composition, luminescent and electrical properties of a-Si{sub 1-x}C{sub x}:H thin films fabricated by reactive RF magnetron sputtering has been studied. A strong dependence on RF sputtering power is seen on the electrical and chemical properties. The a-Si{sub 1-x}C{sub x}:H films fabricated by low RF power levels followed by low-temperature oxidation (at 450 C-500 C) display high intensity of PL, good MOSCV characteristic and low leakage current through the dielectric. Increase of oxidation temperature increases precipitation of carbon nano-inclusions in the materials, that result in reduction of PL intensity and increase of dielectric leakage. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Compositional Dependence of the Optical Properties of Amorphous Semiconducting Glass Se80Ge20- x Cd x (0 ≤ x ≤ 12 at.%) Thin Films

    Science.gov (United States)

    Hegab, N. A.; Farid, A. S.; Shakra, A. M.; Afifi, M. A.; Alrebati, A. M.

    2016-07-01

    Se80Ge20- x Cd x (0 ≤ x ≤ 12 at.%) compositions were prepared by a quenching technique. Thin films of the obtained compositions were deposited on dry clean glass substrates by a thermal evaporation technique. The chemical composition of the film samples have been determined by energy dispersive x-ray spectroscopy (EDX). X-ray diffraction measurements showed the amorphous nature of the studied films. The optical constants ( n, k) were determined for the studied films using spectrophotometric measurements of transmittance T( λ) in the wavelength range (350 nm to 2500 nm), and using Swanepoel's method. The values of the dispersion energy E d, oscillator energy E o, the lattice dielectric constant ɛ ∞L and the high-frequency dielectric constant ɛ s were determined. The optical band gap Eg^{{opt}} is estimated for all compositions from the absorption coefficient α. The analysis of the optical absorption data revealed the existence of allowed indirect transitions for all compositions. The effect of adding Cd content on the obtained optical parameters was also discussed.

  15. Compositional Dependence of the Optical Properties of Amorphous Semiconducting Glass Se80Ge20-x Cd x (0 ≤ x ≤ 12 at.%) Thin Films

    Science.gov (United States)

    Hegab, N. A.; Farid, A. S.; Shakra, A. M.; Afifi, M. A.; Alrebati, A. M.

    2016-04-01

    Se80Ge20-x Cd x (0 ≤ x ≤ 12 at.%) compositions were prepared by a quenching technique. Thin films of the obtained compositions were deposited on dry clean glass substrates by a thermal evaporation technique. The chemical composition of the film samples have been determined by energy dispersive x-ray spectroscopy (EDX). X-ray diffraction measurements showed the amorphous nature of the studied films. The optical constants (n, k) were determined for the studied films using spectrophotometric measurements of transmittance T(λ) in the wavelength range (350 nm to 2500 nm), and using Swanepoel's method. The values of the dispersion energy E d, oscillator energy E o, the lattice dielectric constant ɛ ∞L and the high-frequency dielectric constant ɛ s were determined. The optical band gap Eg^{{opt}} is estimated for all compositions from the absorption coefficient α. The analysis of the optical absorption data revealed the existence of allowed indirect transitions for all compositions. The effect of adding Cd content on the obtained optical parameters was also discussed.

  16. Short channel amorphous In-Ga-Zn-O thin-film transistor arrays for ultra-high definition active matrix liquid crystal displays: Electrical properties and stability

    Science.gov (United States)

    Kim, Soo Chang; Kim, Young Sun; Yu, Eric Kai-Hsiang; Kanicki, Jerzy

    2015-09-01

    The electrical properties and stability of ultra-high definition (UHD) amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) arrays with short channel (width/length = 12/3 μm) were examined. A-IGZO TFT arrays have a mobility of ∼6 cm2/V s, subthreshold swing (S.S.) of 0.34 V/decade, threshold voltage of 3.32 V, and drain current (Id) on/off ratio of stress was used to simulate the actual operation of active matrix liquid crystal displays (AM-LCDs). The threshold voltage shift had a dependency on the magnitude of drain bias stress, frequency, and duty cycle due to the impact ionization accelerated at high temperature. This study demonstrates that the short channel effects, source/drain contact resistances and impact ionization have to be taken into account during optimization of UHD AM-LCDs.

  17. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Oh, Byung Su [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Display Company, Yongin (Korea, Republic of); Joo, Min-Kyu [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); IMEP-LAHC, Grenoble INP, Minatec, CS 50257, 38016 Grenoble (France); Ahn, Seung-Eon [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin 446-712 (Korea, Republic of)

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  18. Surface potential measurement on contact resistance of amorphous-InGaZnO thin film transistors by Kelvin probe force microscopy

    Science.gov (United States)

    Han, Zhiheng; Xu, Guangwei; Wang, Wei; Lu, Congyan; Lu, Nianduan; Ji, Zhuoyu; Li, Ling; Liu, Ming

    2016-07-01

    Contact resistance plays an important role in amorphous InGaZnO (a-IGZO) thin film transistors (TFTs). In this paper, the surface potential distributions along the channel have been measured by using Kelvin probe force microscopy (KPFM) on operating a-IGZO TFTs, and sharp potential drops at the edges of source and drain were observed. The source and drain contact resistances can be extracted by dividing sharp potential drops with the corresponding drain to source current. It is found that the contact resistances could not be neglected compared with the whole channel resistances in the a-IGZO TFT, and the contact resistances decrease remarkably with increasing gate biased voltage. Our results suggest that the contact resistances can be controlled by tuning the gate biased voltage. Moreover, a transition from gradual channel approximation to space charge region was observed through the surface potential map directly when TFT operating from linear regime to saturation regime.

  19. Modeling of current–voltage characteristics for dual-gate amorphous silicon thin-film transistors considering deep Gaussian density-of-state distribution

    International Nuclear Information System (INIS)

    Accounting for the deep Gaussian and tail exponential distribution of the density of states, a physical approximation for potentials of amorphous silicon thin-film transistors using a symmetric dual gate (sDG a-Si:H TFT) has been presented. The proposed scheme provides a complete solution of the potentials at the surface and center of the layer without solving any transcendental equations. A channel current model incorporating features of gate voltage-dependent mobility and coupling factor is derived. We show the parameters required for accurately describing the current–voltage (I–V) characteristics of DG a-Si:H TFT and just how sensitively these parameters affect TFT current. Particularly, the parameters' dependence on the I–V characteristics with respect to the density of deep state and channel thickness has been investigated in detail. The resulting scheme and model are successively verified through comparison with numerical simulations as well as the available experimental data. (paper)

  20. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

    Science.gov (United States)

    Niang, K. M.; Barquinha, P. M. C.; Martins, R. F. P.; Cobb, B.; Powell, M. J.; Flewitt, A. J.

    2016-02-01

    Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 107 s-1. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys. 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed.

  1. Effect of Al2O3 insulator thickness on the structural integrity of amorphous indium-gallium-zinc-oxide based thin film transistors.

    Science.gov (United States)

    Kim, Hak-Jun; Hwang, In-Ju; Kim, Youn-Jea

    2014-12-01

    The current transparent oxide semiconductors (TOSs) technology provides flexibility and high performance. In this study, multi-stack nano-layers of TOSs were designed for three-dimensional analysis of amorphous indium-gallium-zinc-oxide (a-IGZO) based thin film transistors (TFTs). In particular, the effects of torsional and compressive stresses on the nano-sized active layers such as the a-IGZO layer were investigated. Numerical simulations were carried out to investigate the structural integrity of a-IGZO based TFTs with three different thicknesses of the aluminum oxide (Al2O3) insulator (δ = 10, 20, and 30 nm), respectively, using a commercial code, COMSOL Multiphysics. The results are graphically depicted for operating conditions. PMID:25971080

  2. Role of Self-Assembled Monolayers on Improved Electrical Stability of Amorphous In-Ga-Zn-O Thin-Film Transistors

    CERN Document Server

    Du, Xiaosong; Motley, Joshua R; Stickle, William F; Bluhm, Hendrik; Herman, Gregory S

    2014-01-01

    Self-assembled monolayers (SAMs) have been used to improve both the positive and negative bias-stress stability of amorphous indium gallium zinc oxide (IGZO) bottom gate thin film transistors (TFTs). N-hexylphosphonic acid (HPA) and fluorinated hexylphosphonic acid (FPA) SAMs adsorbed on IGZO back channel surfaces were shown to significantly reduce bias stress turn-on voltage shifts compared to IGZO back channel surfaces with no SAMs. FPA was found to have a lower surface energy and lower packing density than HPA, as well as lower bias stress turn-on voltage shifts. The improved stability of IGZO TFTs with SAMs can be primarily attributed to a reduction in molecular adsorption of contaminants on the IGZO back channel surface and minimal trapping states present with phosphonic acid binding to the IGZO surface.

  3. Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment

    Science.gov (United States)

    Kim, Joonwoo; Jeong, Soon Moon; Jeong, Jaewook

    2015-11-01

    We fabricated depletion type, transparent amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) and inverters with an Ar plasma treatment and analyzed their scaling characteristics with channel lengths ranging from 2 to 100 µm. The improvement of the field-effect mobility of a-IGZO TFTs is apparent only for short channel lengths. There is also an unexpected side effect of the Ar plasma treatment, which introduces back-channel interfacial states and induces a positive shift in the threshold voltage of a-IGZO TFTs. The resulting increase in the field-effect mobility and the positive shift in the threshold voltage of each TFT increase the differential gain up to 3 times and the positive shift in the transient point of the transparent inverters.

  4. Driving Method for Compensating Reliability Problem of Hydrogenated Amorphous Silicon Thin Film Transistors and Image Sticking Phenomenon in Active Matrix Organic Light-Emitting Diode Displays

    Science.gov (United States)

    Shin, Min-Seok; Jo, Yun-Rae; Kwon, Oh-Kyong

    2011-03-01

    In this paper, we propose a driving method for compensating the electrical instability of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) and the luminance degradation of organic light-emitting diode (OLED) devices for large active matrix OLED (AMOLED) displays. The proposed driving method senses the electrical characteristics of a-Si:H TFTs and OLEDs using current integrators and compensates them by an external compensation method. Threshold voltage shift is controlled a using negative bias voltage. After applying the proposed driving method, the measured error of the maximum emission current ranges from -1.23 to +1.59 least significant bit (LSB) of a 10-bit gray scale under the threshold voltage shift ranging from -0.16 to 0.17 V.

  5. Field Emission Properties of Nitrogen-doped Amorphous Carbon Films

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Nitrogen-doped amorphous carbon thin films are deposited on the ceramic substrates coated with Ti film by using direct current magnetron sputtering technique at N2 and Ar gas mixture atmosphere during deposition. The field emission properties of the deposited films have been investigated. The threshold field as low as 5.93V/μm is obtained and the maximum current density increases from 4μA/cm2 to 20.67μA/cm2 at 10.67V/μm comparing with undoped amorphous film. The results show that nitrogen doping plays an important role in field emission of amorphous carbon thin films.

  6. Simulation and Experimental Study of Photogeneration and Recombination in Amorphous-Like Silicon Thin Films Deposited by 27.12 MHz Plasma-Enhanced Chemical Vapor Deposition

    OpenAIRE

    Chia-Hsun Hsu; In-Cha Hsieh; Chia-Chi Tsou; Shui-Yang Lien

    2013-01-01

    Amorphous-like silicon (a-Si:H-like) thin films are prepared by 27.12 MHz plasma-enhanced chemical vapor deposition technique. The films are applied to p-i-n single junction thin film solar cells with varying i-layer thickness to observe the effects on the short-circuit current density, as well as the open-circuit voltage, fill factor, and conversion efficiency. The most significant experimental result is that Jsc has two different behaviors with increasing the i-layer thickness, which can be...

  7. Enhancing Light-Trapping Properties of Amorphous Si Thin-Film Solar Cells Containing High-Reflective Silver Conductors Fabricated Using a Nonvacuum Process

    Directory of Open Access Journals (Sweden)

    Jun-Chin Liu

    2014-01-01

    Full Text Available We proposed a low-cost and highly reflective liquid organic sheet silver conductor using back contact reflectors in amorphous silicon (a-Si single junction superstrate configuration thin-film solar cells produced using a nonvacuum screen printing process. A comparison of silver conductor samples with vacuum-system-sputtered silver samples indicated that the short-circuit current density (Jsc of sheet silver conductor cells was higher than 1.25 mA/cm2. Using external quantum efficiency measurements, the sheet silver conductor using back contact reflectors in cells was observed to effectively enhance the light-trapping ability in a long wavelength region (between 600 nm and 800 nm. Consequently, we achieved an optimal initial active area efficiency and module conversion efficiency of 9.02% and 6.55%, respectively, for the a-Si solar cells. The results indicated that the highly reflective sheet silver conductor back contact reflector layer prepared using a nonvacuum process is a suitable candidate for high-performance a-Si thin-film solar cells.

  8. A study on the properties of C-doped Ge8Sb2Te11 thin films during an amorphous-to-crystalline phase transition

    Science.gov (United States)

    Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

    2016-04-01

    In this work, we evaluated the structural, electrical and optical properties of carbon-doped Ge8Sb2Te11 thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve the thermal stability. Ge8Sb2Te11 and carbon-doped Ge8Sb2Te11 films of 250 nm in thickness were deposited on p-type Si (100) and glass substrates by using a RF magnetron reactive co-sputtering system at room temperature. The fabricated films were annealed in a furnance in the 0 ~ 400°C temperature range. The structural properties were analyzed by using X-ray diffraction (XRD), and the result showed that the carbon-doped Ge8Sb2Te11 had a face-centeredcubic (fcc) crystalline structure and an increased crystallization temperature ( T c ). An increase in the T c leads to thermal stability in the amorphous state. The optical properties were analyzed by using an UV-Vis-IR spectrophotometer, and the result showed an increase in the optical-energy band gap ( E op ) in the crystalline materials and an increase in the E op difference (Δ E op ), which is a good effect for reducing the noise in the memory device. The electrical properties were analyzed by using a 4-point probe, which showed an increase in the sheet resistance ( R s ) in the amorphous state and the crystalline state, which means a reduced programming current in the memory device.

  9. Thermal Characteristics of Amorphous Indium-Gallium-Zinc-Oxide and Graphite in Display Panel Based Thin Film Transistors.

    Science.gov (United States)

    Kim, Hak-Jun; Kim, Youn-Jea

    2015-11-01

    One of the important design factors in the smart electronic industry is proper heat treatment of the display panel. In order to improve the heat transfer performance of display panels, we analyzed a three-dimensional model of multi-stack layers of the thin film transistors (TFTs). In particular, we numerically investigated the thermal barrier effects of active layers having different material properties of a-IGZO (isotropy) and graphite (anisotropy). We calculated the temperature distribution on the display panel with each active layer, using the commercial code, COMSOL Multiphysics. We graphically depict comparative results of the thermal characteristics between a-IGZO and graphite with the stacked structure of the TFTs. PMID:26726627

  10. Top-gate hybrid complementary inverters using pentacene and amorphous InGaZnO thin-film transistors with high operational stability

    Directory of Open Access Journals (Sweden)

    J. B. Kim

    2012-03-01

    Full Text Available We report on the operational stability of low-voltage hybrid organic-inorganic complementary inverters with a top-gate bottom source-drain geometry. The inverters are comprised of p-channel pentacene and n-channel amorphous InGaZnO thin-film transistors (TFTs with bi-layer gate dielectrics formed from an amorphous layer of a fluoropolymer (CYTOP and a high-k layer of Al2O3. The p- and n- channel TFTs show saturation mobility values of 0.1 ± 0.01 and 5.0 ± 0.5 cm2/Vs, respectively. The individual transistors show high electrical stability with less than 6% drain-to-source current variations after 1 h direct current (DC bias stress. Complementary inverters yield hysteresis-free voltage transfer characteristics for forward and reverse input biases with static DC gain values larger than 45 V/V at 8 V before and after being subjected to different conditions of electrical stress. Small and reversible variations of the switching threshold voltage of the inverters during these stress tests are compatible with the observed stability of the individual TFTs.

  11. Self-aligned top-gate amorphous indium zinc oxide thin-film transistors exceeding low-temperature poly-Si transistor performance.

    Science.gov (United States)

    Park, Jae Chul; Lee, Ho-Nyeon; Im, Seongil

    2013-08-14

    Thin-film transistor (TFT) is a key component of active-matrix flat-panel displays (AMFPDs). These days, the low-temperature poly silicon (LTPS) TFTs are to match with advanced AMFPDs such as the active matrix organic light-emitting diode (AMOLED) display, because of their high mobility for fast pixel switching. However, the manufacturing process of LTPS TFT is quite complicated, costly, and scale-limited. Amorphous oxide semiconductor (AOS) TFT technology is another candidate, which is as simple as that of conventioanl amorphous (a)-Si TFTs in fabrication but provides much superior device performances to those of a-Si TFTs. Hence, various AOSs have been compared with LTPS for active channel layer of the advanced TFTs, but have always been found to be relatively inferior to LTPS. In the present work, we clear the persistent inferiority, innovating the device performaces of a-IZO TFT by adopting a self-aligned coplanar top-gate structure and modifying the surface of a-IZO material. Herein, we demonstrate a high-performance simple-processed a-IZO TFT with mobility of ∼157 cm(2) V(-1) s(-1), SS of ∼190 mV dec(-1), and good bias/photostabilities, which overall surpass the performances of high-cost LTPS TFTs. PMID:23823486

  12. Impedance and electric modulus study of amorphous TiTaO thin films: highlight of the interphase effect

    Science.gov (United States)

    Rouahi, A.; Kahouli, A.; Challali, F.; Besland, M. P.; Vallée, C.; Yangui, B.; Salimy, S.; Goullet, A.; Sylvestre, A.

    2013-02-01

    The influence of phases and phase's boundaries of TiO2 and Ta2O5 in the dielectric and electric response of TiTaO (100 nm thick) elaborated by RF magnetron sputtering was highlighted by complex impedance spectroscopy. Dielectric and electric modulus properties were studied over a wide frequency range (0.1-105 Hz) and at various temperatures (-160 to 120 °C). The diagram of Argand (ɛ″ versus ɛ‧) shows the contribution of phases, phases' boundaries and conductivity effect on the electric response of TiTaO thin films. Moreover, the resistance of the material decreases when the temperature increases, thus the material exhibits a negative temperature coefficient of resistance. The electric modulus plot indicates the presence of two peaks of relaxation. The first relaxation process appears at low temperature with activation energy of about 0.22 eV and it is related to the first ionization energy of oxygen vacancies. The second relaxation process appears at high temperature with activation energy of about 0.44 eV. This second peak is attributed to the Maxwell-Wagner-Sillars relaxation. The plots of the complex dielectric modulus and the impedance as a function of frequency allow concluding to a localized relaxation due to the long-range conductivity in the TiTaO film.

  13. Facile Routes To Improve Performance of Solution-Processed Amorphous Metal Oxide Thin Film Transistors by Water Vapor Annealing.

    Science.gov (United States)

    Park, Won-Tae; Son, Inyoung; Park, Hyun-Woo; Chung, Kwun-Bum; Xu, Yong; Lee, Taegweon; Noh, Yong-Young

    2015-06-24

    Here, we report on a simple and high-rate oxidization method for producing solution-based compound mixtures of indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO) metal-oxide semiconductors (MOS) for thin-film transistor (TFT) applications. One of the issues for solution-based MOS fabrication is how to sufficiently oxidize the precursor in order to achieve high performance. As the oxidation rate of solution processing is lower than vacuum-based deposition such as sputtering, devices using solution-processed MOS exhibit relatively poorer performance. Therefore, we propose a method to prepare the metal-oxide precursor upon exposure to saturated water vapor in a closed volume for increasing the oxidization efficiency without requiring additional oxidizing agent. We found that the hydroxide rate of the MOS film exposed to water vapor is lower than when unexposed (≤18%). Hence, we successfully fabricated oxide TFTs with high electron mobility (27.9 cm(2)/V·s) and established a rapid process (annealing at 400 °C for 5 min) that is much shorter than the conventional as-deposited long-duration annealing (at 400 °C for 1 h) whose corresponding mobility is even lower (19.2 cm(2)/V·s). PMID:26043206

  14. Microstructural and surface property variations due to the amorphous region formed by thermal annealing in Al-doped ZnO thin films grown on n-Si (1 0 0) substrates

    International Nuclear Information System (INIS)

    X-ray diffraction (XRD) patterns revealed that the as-grown and annealed Al-doped ZnO (AZO) films grown on the n-Si (1 0 0) substrates were polycrystalline. Transmission electron microscopy (TEM) images showed that bright-contrast regions existed in the grain boundary, and high-resolution TEM (HRTEM) images showed that the bright-contrast regions with an amorphous phase were embedded in the ZnO grains. While the surface roughness of the AZO film annealed at 800 deg. C became smoother, those of the AZO films annealed at 900 and 1000 deg. C became rougher. XRD patterns, TEM images, selected-area electron diffraction patterns, HRTEM images, and atomic force microscopy (AFM) images showed that the crystallinity in the AZO thin films grown on the n-Si (1 0 0) substrates was enhanced resulting from the release in the strain energy for the AZO thin films due to thermal annealing at 800 deg. C. XRD patterns and AFM images show that the crystallinity of the AZO thin films annealed at 1000 deg. C deteriorated due to the formation of the amorphous phase in the ZnO thin films.

  15. Coherent phonon modes of crystalline and amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} thin films: A fingerprint of structure and bonding

    Energy Technology Data Exchange (ETDEWEB)

    Shalini, A.; Liu, Y.; Srivastava, G. P.; Hicken, R. J. [Department of Physics and Astronomy, University of Exeter, Exeter EX4 4QL (United Kingdom); Katmis, F.; Braun, W. [Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2015-01-14

    Femtosecond optical pump-probe measurements have been made upon epitaxial, polycrystalline, and amorphous thin films of Ge{sub 2}Sb{sub 2}Te{sub 5} (GST). A dominant coherent optical phonon mode of 3.4 THz frequency is observed in time-resolved anisotropic reflectance (AR) measurements of epitaxial films, and is inferred to have 3-dimensional T{sub 2}-like character based upon the dependence of its amplitude and phase on pump and probe polarization. In contrast, the polycrystalline and amorphous phases exhibit a comparatively weak mode of about 4.5 THz frequency in both reflectivity (R) and AR measurements. Raman microscope measurements confirm the presence of the modes observed in pump-probe measurements, and reveal additional modes. While the Raman spectra are qualitatively similar for all three phases of GST, the mode frequencies are found to be different within experimental error, ranging from 3.2 to 3.6 THz and 4.3 to 4.7 THz, indicating that the detailed crystallographic structure has a significant effect upon the phonon frequency. While the lower frequency (3.6 THz) mode of amorphous GST is most likely associated with GeTe{sub 4} tetrahedra, modes in epitaxial (3.4 THz) and polycrystalline (3.2 THz) GST could be associated with either GeTe{sub 6} octahedra or Sb-Te bonds within defective octahedra. The more polarizable Sb-Te bonds are the most likely origin of the higher frequency (4.3–4.7 THz) mode, although the influence of Te-Te bonds cannot be excluded. The effect of high pump fluence, which leads to irreversible structural changes, has been explored. New modes with frequency of 3.5/3.6 THz in polycrystalline/amorphous GST may be associated with Sb{sub 2}Te{sub 3} or GeTe{sub 4} tetrahedra, while a 4.2 THz mode observed in epitaxial GST may be related to segregation of Sb.

  16. Effect of nickel oxide seed layers on annealed-amorphous titanium oxide thin films prepared using plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    The effect of a nickel oxide (NiOx) seed layer on the crystallization and photocatalytic activity of the sequentially plasma-enhanced chemical vapor deposited amorphous titanium oxide (TiOx) thin film processed by a post-annealing process was investigated. The evolution of the crystalline structures, chemical bond configurations, and surface/cross-sectional morphologies of the annealed TiOx films, with and without a NiOx seed layer, was examined using X-ray diffractometer, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscope measurements. Thermo- and photo-induced hydrophilicity was determined by measuring the contact angle of water droplet. Photocatalytic activity after UV light irradiation was evaluated from the decolorization of a methylene blue solution. The crystallization temperature of the TiOx film, deposited on a NiOx seed layer, was found to be lower than that of a pure TiOx film, further improving the thermo- and photo-induced surface super-hydrophilicity. The TiOx film deposited onto the NiOx seed layer, resulting in significant cluster boundaries, showed a rough surface morphology and proved to alleviate the anatase crystal growth by increasing the post-annealing temperature, which yielded a more active surface area and prohibited the recombination of photogenerated electrons and holes. The photocatalytic activity of the NiOx/TiOx system with such a textured surface therefore was enhanced and optimized through an adequate post-annealing process.

  17. High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells.

    Science.gov (United States)

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 °C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous silicon solar cells and other thin film structures over very large areas in very compact, simple reactors. PMID:27174318

  18. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  19. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  20. Microstructural evolution of tungsten oxide thin films

    International Nuclear Information System (INIS)

    Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 deg. were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a 'instability wheel' model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

  1. Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

    Science.gov (United States)

    Chun, Minkyu; Um, Jae Gwang; Park, Min Sang; Chowdhury, Md Delwar Hossain; Jang, Jin

    2016-07-01

    We report the abnormal behavior of the threshold voltage (VTH) shift under positive bias Temperature stress (PBTS) and negative bias temperature stress (NBTS) at top/bottom gate in dual gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). It is found that the PBTS at top gate shows negative transfer shift and NBTS shows positive transfer shift for both top and bottom gate sweep. The shift of bottom/top gate sweep is dominated by top gate bias (VTG), while bottom gate bias (VBG) is less effect than VTG. The X-ray photoelectron spectroscopy (XPS) depth profile provides the evidence of In metal diffusion to the top SiO2/a-IGZO and also the existence of large amount of In+ under positive top gate bias around top interfaces, thus negative transfer shift is observed. On the other hand, the formation of OH- at top interfaces under the stress of negative top gate bias shows negative transfer shift. The domination of VTG both on bottom/top gate sweep after PBTS/NBTS is obviously occurred due to thin active layer.

  2. Influence of deposition parameters on morphology, growth and structure of crystalline and amorphous organic thin films : (the case of perylene and alpha-NPD)

    OpenAIRE

    Niyamakom, Phenwisa

    2008-01-01

    A growing research effort in organic electronics has been developped rapidly to utilize the electronic and optical properties of organic materials (polymers and oligomers) and hybrids (organic-inorganic composites) through novel material synthesis, thin film deposition techniques and many mores. Several applications, e.g. organic thin film transistors (OTFTs) and organic light emitting devices (OLEDs), have been envisioned in both academic research and industry. An understanding of thin film ...

  3. Innovative Characterization of Amorphous and Thin-Film Silicon for Improved Module Performance: 1 February 2005 - 31 July 2008

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, P. C.; Williams, G. A.

    2009-09-01

    Electron spin resonance and nuclear magnetic resonance was done on amorphous silicon samples (modules with a-Si:H and a-SixGe1-x:H intrinsic layer) to study defects that contribute to Staebler-Wronski effect.

  4. Design and noise analysis of charge sensitive amplifier for readout of pixelized thin film amorphous silicon sensors

    CERN Document Server

    Poltorak, K; Jarron, P; Kaplon, J; 10.1109/NSSMIC.2008.4774982

    2009-01-01

    Future high-energy physics experiments entail the need to improve the existing detection technologies, as well as develop new ones. Larger luminosities of the new accelerators require greater granularity of tracking detectors, which will be exposed to much higher doses of radiation. One of the newly-investigated solutions for tracking detectors is the Thin Film on ASIC (TFA) technology, which allows combining advantages of Monolithic Active Pixel and Hybrid Pixel technologies. In the paper we present noise analysis of a front-end circuit for readout of a TFA sensor. The circuit is based on a charge sensitive preamplifier built around an un-buffered cascode stage with active reset circuit. The feedback capacitance is reset through a transistor biased with a constant current instead of a voltage controlled reset transistor in order to limit parasitic charge injection into a very small feedback capacitance. Detailed analysis of noise in the reset and the readout phase and design optimization based on the Enz-Kru...

  5. Calorimetry of epitaxial thin films.

    Science.gov (United States)

    Cooke, David W; Hellman, F; Groves, J R; Clemens, B M; Moyerman, S; Fullerton, E E

    2011-02-01

    Thin film growth allows for the manipulation of material on the nanoscale, making possible the creation of metastable phases not seen in the bulk. Heat capacity provides a direct way of measuring thermodynamic properties of these new materials, but traditional bulk calorimetric techniques are inappropriate for such a small amount of material. Microcalorimetry and nanocalorimetry techniques exist for the measurements of thin films but rely on an amorphous membrane platform, limiting the types of films which can be measured. In the current work, ion-beam-assisted deposition is used to provide a biaxially oriented MgO template on a suspended membrane microcalorimeter in order to measure the specific heat of epitaxial thin films. Synchrotron x-ray diffraction showed the biaxial order of the MgO template. X-ray diffraction was also used to prove the high quality of epitaxy of a film grown onto this MgO template. The contribution of the MgO layer to the total heat capacity was measured to be just 6.5% of the total addenda contribution. The heat capacity of a Fe(.49)Rh(.51) film grown epitaxially onto the device was measured, comparing favorably to literature data on bulk crystals. This shows the viability of the MgO∕SiN(x)-membrane-based microcalorimeter as a way of measuring the thermodynamic properties of epitaxial thin films. PMID:21361612

  6. Thin-film Rechargeable Lithium Batteries

    Science.gov (United States)

    Dudney, N. J.; Bates, J. B.; Lubben, D.

    1995-06-01

    Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

  7. Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells

    OpenAIRE

    Yang-Shin Lin; Shui-Yang Lien; Chao-Chun Wang; Chia-Hsun Hsu; Chih-Hsiang Yang; Asheesh Nautiyal; Dong-Sing Wuu; Pi-Chuen Tsai; Shuo-Jen Lee

    2011-01-01

    The amorphous silicon/amorphous silicon (a-Si/a-Si) tandem solar cells have attracted much attention in recent years, due to the high efficiency and low manufacturing cost compared to the single-junction a-Si solar cells. In this paper, the tandem cells are fabricated by high-frequency plasma-enhanced chemical vapor deposition (HF-PECVD) at 27.1 MHz. The effects of the recombination layer and the i-layer thickness matching on the cell performance have been investigated. The results show that ...

  8. 微波退火非晶硅薄膜低温晶化研究%Study on the Crystallization of Amorphous Silicon Thin Film by Microwave Annealing at Low Temperature

    Institute of Scientific and Technical Information of China (English)

    饶瑞; 曾祥斌; 徐重阳; 孙国才

    2001-01-01

    多晶硅薄膜晶体管以其独特的优点在液晶显示领域中起着重要的作用。为了满足在普通玻璃衬底上制备多晶硅薄膜晶体管有源矩阵液晶显示器,低温制备(<600°C)高质量多晶硅薄膜已成为研究热点。文章研究了一种低温制备多晶硅薄膜的新工艺:微波退火非晶硅薄膜固相晶化法,利用X射线衍射、拉曼光谱和扫描电镜分析了微波退火工艺对非晶硅薄膜固相晶化的影响,成功实现了低温制备多晶硅薄膜。%Polycrystalline silicon thin film transistor has played adominant role in the area of liquid display.Preparation of polycrystalline silicon thin film with high quality at low temperature(<600 °C)has been recently become one of the hot spots in order to meet the requirement of polycrystalline silicon thin film transistors in the active matrix liquid crystal display on the substrate of common glass.We developed a new process for preparing polycrystalline silicon thin film at low temperature by microwave-induced solid phase crystallization of amorphous silicon thin film.The influence of microwave annealing process on the crystallization of amorphous silicon thin film has been studied by XRD,raman spectrum and SEM.And then polycrystalline silicon thin film was prepared at low temperature.

  9. Photosensitivity of pulsed laser deposited Ge{sub 20}As{sub 20}Se{sub 60} and Ge{sub 10}As{sub 30}Se{sub 60} amorphous thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hawlová, P.; Olivier, M.; Verger, F. [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Nazabal, V. [Chemical Sciences Institute of Rennes (ISCR), Glasses and Ceramics Team, UMR-CNRS 6226, University of Rennes 1, 35042 Rennes Cedex (France); Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Němec, P., E-mail: petr.nemec@upce.cz [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic)

    2013-10-15

    Graphical abstract: - Highlights: • Amorphous Ge{sub 20}As{sub 20}Se{sub 60}/Ge{sub 10}As{sub 30}Se{sub 60} films are fabricated by pulsed laser deposition. • Photosensitivity of the layers is studied by employing spectroscopic ellipsometry. • As-deposited/relaxed thin films were irradiated by 593, 635, and 660 nm lasers. • Ge{sub 20}As{sub 20}Se{sub 60} layers present almost zero photorefraction in relaxed state. - Abstract: Amorphous Ge{sub 20}As{sub 20}Se{sub 60} and Ge{sub 10}As{sub 30}Se{sub 60} thin films are fabricated by pulsed laser deposition. Prepared films are characterized in terms of their morphology, chemical composition, and optical properties. Special attention is given to the photosensitivity of the layers, which was studied by spectroscopic ellipsometry with as-deposited, annealed and exposed films by three different laser sources (593, 635, and 660 nm). The results show better photostability for Ge{sub 20}As{sub 20}Se{sub 60} thin films, where photoinduced change of optical band gap was found to be equal or less than 0.04 eV and these layers present almost zero photorefraction.

  10. Behavioral data of thin-film single junction amorphous silicon (a-Si photovoltaic modules under outdoor long term exposure

    Directory of Open Access Journals (Sweden)

    Sofiane Kichou

    2016-06-01

    Further discussions and interpretations concerning the data shared in this article can be found in the research paper “Characterization of degradation and evaluation of model parameters of amorphous silicon photovoltaic modules under outdoor long term exposure” (Kichou et al., 2016 [1].

  11. Development of Tandem Amorphous/Microcrystalline Silicon Thin-Film Large-Area See-Through Color Solar Panels with Reflective Layer and 4-Step Laser Scribing for Building-Integrated Photovoltaic Applications

    OpenAIRE

    Chin-Yi Tsai; Chin-Yao Tsai

    2014-01-01

    In this work, tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar modules were successfully designed and developed for building-integrated photovoltaic applications. Novel and key technologies of reflective layers and 4-step laser scribing were researched, developed, and introduced into the production line to produce solar panels with various colors, such as purple, dark blue, light blue, silver, golden, orange, red wine, and coffee. The highest module power...

  12. Charged particle detectors made from thin layers of amorphous silicon

    International Nuclear Information System (INIS)

    A series of experiments was conducted to determine the feasibility of using hydrogenated amorphous silicon (α-Si:H) as solid state thin film charged particle detectors. 241Am alphas were successfully detected with α-Si:H devices. The measurements and results of these experiments are presented. The problems encountered and changes in the fabrication of the detectors that may improve the performance are discussed

  13. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness

    Science.gov (United States)

    Kim, Ye Kyun; Ahn, Cheol Hyoun; Yun, Myeong Gu; Cho, Sung Woon; Kang, Won Jun; Cho, Hyung Koun

    2016-05-01

    In this paper, a simple and controllable “wet pulse annealing” technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150 °C) by using scalable vacuum deposition is proposed. This method entailed the quick injection of water vapor for 0.1 s and purge treatment in dry ambient in one cycle; the supply content of water vapor was simply controlled by the number of pulse repetitions. The electrical transport characteristics revealed a remarkable performance of the a-IGZO TFTs prepared at the maximum process temperature of 150 °C (field-effect mobility of 13.3 cm2 V‑1 s‑1 Ion/Ioff ratio ≈ 108 reduced I-V hysteresis), comparable to that of a-IGZO TFTs annealed at 350 °C in dry ambient. Upon analysis of the angle-resolved x-ray photoelectron spectroscopy, the good performance was attributed to the effective suppression of the formation of hydroxide and oxygen-related defects. Finally, by using the wet pulse annealing process, we fabricated, on a plastic substrate, an ultrathin flexible a-IGZO TFT with good electrical and bending performances.

  14. Multi-resonant silver nano-disk patterned thin film hydrogenated amorphous silicon solar cells for Staebler-Wronski effect compensation

    CERN Document Server

    Vora, Ankit; Pearce, Joshua M; Bergstrom, Paul L; Güney, Durdu Ö

    2014-01-01

    We study polarization independent improved light trapping in commercial thin film hydrogenated amorphous silicon (a-Si:H) solar photovoltaic cells using a three-dimensional silver array of multi-resonant nano-disk structures embedded in a silicon nitride anti-reflection coating (ARC) to enhance optical absorption in the intrinsic layer (i-a-Si:H) for the visible spectrum for any polarization angle. Predicted total optical enhancement (OE) in absorption in the i-a-Si:H for AM-1.5 solar spectrum is 18.51% as compared to the reference, and producing a 19.65% improvement in short-circuit current density (JSC) over 11.7 mA/cm2 for a reference cell. The JSC in the nano-disk patterned solar cell (NDPSC) was found to be higher than the commercial reference structure for any incident angle. The NDPSC has a multi-resonant optical response for the visible spectrum and the associated mechanism for OE in i-a-Si:H layer is excitation of Fabry-Perot resonance facilitated by surface plasmon resonances. The detrimental Staebl...

  15. Modeling of current-voltage characteristics for dual-gate amorphous silicon thin-film transistors considering deep Gaussian density-of-state distribution

    Science.gov (United States)

    Jian, Qin; Ruohe, Yao

    2015-12-01

    Accounting for the deep Gaussian and tail exponential distribution of the density of states, a physical approximation for potentials of amorphous silicon thin-film transistors using a symmetric dual gate (sDG a-Si:H TFT) has been presented. The proposed scheme provides a complete solution of the potentials at the surface and center of the layer without solving any transcendental equations. A channel current model incorporating features of gate voltage-dependent mobility and coupling factor is derived. We show the parameters required for accurately describing the current-voltage (I-V) characteristics of DG a-Si:H TFT and just how sensitively these parameters affect TFT current. Particularly, the parameters' dependence on the I-V characteristics with respect to the density of deep state and channel thickness has been investigated in detail. The resulting scheme and model are successively verified through comparison with numerical simulations as well as the available experimental data. Project supported by the National Natural Science Foundation of China (No. 61274085) and the Cadence Design System, Inc.

  16. Examination of the ambient effects on the stability of amorphous indium-gallium-zinc oxide thin film transistors using a laser-glass-sealing technology

    International Nuclear Information System (INIS)

    The effect of an ambient atmosphere with a positive bias constant current stress (CCS) and a negative bias illumination stress (NBIS) on the stability of amorphous In-Ga-Zn-O thin film transistors (TFTs) is examined by utilizing a glass-hermetic-sealant with a moisture permeability of less than 10−6 g/m2 · day. In the CCS test, the threshold voltage shift (ΔVth) was remarkably suppressed in the glass-sealed TFTs. The unsealed and resin-sealed TFTs exhibited large ΔVth values. During the NBIS tests, the glass-sealed TFTs had almost the same negative ΔVth as the unsealed and resin sealed TFTs. Among the different TFTs, no significant differences were observed in the threshold voltage, the subthreshold swing and the saturation mobility as a function of the photon energy. It is concluded that ambient molecules were the primary origin of the instability of the ΔVth, induced by a CCS, but they were not related to the NBIS instability. The major role of the effective passivation layers in the NBIS test was not to simply block out the ambient effects, but to reduce the extra density of states at/near the surface of the back channel.

  17. Variable-range hopping conduction and metal–insulator transition in amorphous RexSi1−x thin films

    International Nuclear Information System (INIS)

    Resistivity, ρ(T), of the amorphous RexSi1−x thin films with x = 0.285–0.351 is investigated in the interval of T ∼ 300–0.03 K. At x = 0.285–0.324 the activated behavior of ρ(T) is governed by the Mott and the Shklovskii–Efros variable-range hopping (VRH) conduction mechanisms in different temperature intervals and the three-dimensional regime of the hopping. Between x = 0.328 and 0.351 the activationless dependence of ρ(T) takes place. The critical behavior of the characteristic VRH temperatures and of the Coulomb gap, Δ, pertinent to proximity to the metal–insulator transition at the critical value of xc ≈ 0.327, is observed. The analysis of the critical behavior of Δ yields directly the critical exponent of the dielectric permittivity, η = 2.1 ± 0.2, in agreement with the theoretical prediction, η = 2. On the other hand, the values of the critical exponent of the correlation length ν ∼ 0.8–1.1 close to the expected value of unity can be obtained from the analysis of the critical behavior of the VRH characteristic temperatures under an additional assumption of a strong underbarrier scattering of hopping charge carriers in conditions, when the concentration of scattering centers considerably exceeds the concentration of sites involved in the hopping

  18. High mobility amorphous InGaZnO{sub 4} thin film transistors formed by CO{sub 2} laser spike annealing

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Chen-Yang; Zhu, Bin; Ast, Dieter G.; Thompson, Michael O. [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States); Greene, Raymond G. [Corning Incorporated, Corning, New York 14831 (United States)

    2015-03-23

    Amorphous InGaZnO{sub 4} (a-IGZO) thin film transistors (TFTs) hold great potential for large area and flexible electronics with current research focused on improving the mobility and stability. In this work, we report on properties of IGZO TFTs fabricated using laser spike annealing (LSA) with a scanned continuous wave CO{sub 2} laser. For peak annealing temperatures near 430 °C and a 1 ms dwell, TFTs exhibit saturation field-effect mobilities above 70 cm{sup 2}/V-s (V{sub on} ∼ −3 V), a value over 4 times higher than furnace-annealed control samples (∼16 cm{sup 2}/V-s). A model linking oxygen deficient defect structures with limited structural relaxation after the LSA anneal is proposed to explain the observed high mobility. This mobility is also shown to be comparable to the estimated trap-free mobility in oxide semiconductors and suggests that shallow traps can be removed by transient thermal annealing under optimized conditions.

  19. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C

    Science.gov (United States)

    Kim, Won-Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-03-01

    We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm2/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites.

  20. Improvement in reliability of amorphous indium-gallium-zinc oxide thin-film transistors with Teflon/SiO2 bilayer passivation under gate bias stress

    Science.gov (United States)

    Fan, Ching-Lin; Tseng, Fan-Ping; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der; Huang, Bohr-Ran

    2016-02-01

    The reliability of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with Teflon/SiO2 bilayer passivation prepared under positive and negative gate bias stresses (PGBS and NGBS, respectively) was investigated. Heavier electrical degradation was observed under PGBS than under NGBS, indicating that the environmental effects under PGBS are more evident than those under NGBS. The device with bilayer passivation under PGBS shows two-step degradation. The positive threshold voltage shifts during the initial stressing period (before 500 s), owing to the charges trapped in the gate insulator or at the gate insulator/a-IGZO active layer interface. The negative threshold voltage shift accompanies the increase in subthreshold swing (SS) for the continuous stressing period (after 500 s) owing to H2O molecules from ambience diffused within the a-IGZO TFTs. It is believed that Teflon/SiO2 bilayer passivation can effectively improve the reliability of the a-IGZO TFTs without passivation even though the devices are stressed under gate bias.

  1. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    Science.gov (United States)

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin

    2015-12-01

    We have studied the effect of top gate bias (VTG) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm2 intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the VTG from -15 to +15 V. By changing VTG from negative to positive, the Fermi level (EF) shifts toward conduction band edge (EC), which substantially controls the conversion of neutral vacancy to charged one (VO → VO+/VO2+ + e-/2e-), peroxide (O22-) formation or conversion of ionized interstitial (Oi2-) to neutral interstitial (Oi), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows -2.7 V shift at VTG = -15 V, which gradually decreases to -0.42 V shift at VTG = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (VO+/VO2+/O22-/Oi) and/or hole trapping in the a-IGZO /interfaces.

  2. Improving source/drain contact resistance of amorphous indium–gallium–zinc-oxide thin-film transistors using an n+-ZnO buffer layer

    Science.gov (United States)

    Hung, Chien-Hsiung; Wang, Shui-Jinn; Lin, Chieh; Wu, Chien-Hung; Chen, Yen-Han; Liu, Pang-Yi; Tu, Yung-Chun; Lin, Tseng-Hsing

    2016-06-01

    To avoid high temperature annealing in improving the source/drain (S/D) resistance (R DS) of amorphous indium–gallium–zinc-oxide (α-IGZO) thin-film transistors (TFTs) for flexible electronics, a simple and efficient technique using a sputtering-deposited n+-ZnO buffer layer (BL) sandwiched between the S/D electrode and the α-IGZO channel is proposed and demonstrated. It shows that the R DS of α-IGZO TFTs with the proposed n+-ZnO BL is reduced to 8.1 × 103 Ω as compared with 6.1 × 104 Ω of the conventional one. The facilitation of carrier tunneling between the S/D electrode and the α-IGZO channel through the use of the n+-ZnO BL to lower the effective barrier height therein is responsible for the R DS reduction. Effects of the chamber pressure on the carrier concentration of the sputtering-deposited n+-ZnO BL and the thickness of the BL on the degree of improvement in the performance of α-IGZO TFTs are analyzed and discussed.

  3. Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y2O3 passivation

    International Nuclear Information System (INIS)

    We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y2O3) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y2O3 passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO3-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water

  4. Research on Stability Technology of Amorphous Silicon Thin Film Solar Cells%非晶硅薄膜太阳能电池稳定性技术研究

    Institute of Scientific and Technical Information of China (English)

    郑奇

    2011-01-01

    This paper introduced the preparation principle of the amorphous silicon thin film and improvement methods for preparation of silicon membrane. In the process of preparing the amorphous silicon thin film,by discussing the parameter design of amorphous silicon membrane structure,the technology method and battery stability data analysis,the article proposes that taking these measures can improve the stability of the silicon thin film solar cells.%介绍了非晶硅薄膜的制备原理以及硅膜制备过程中的重要改进方法,在制备非晶硅薄膜过程中从非晶硅膜结构的参数设计、生产中的工艺技术方法以及电池稳定性实验数据分析,提出采用该系列措施可在一定程度上改善硅薄膜太阳能电池不够稳定的缺陷.

  5. Phase transformation kinetics in thin films

    International Nuclear Information System (INIS)

    This book contains papers presented at the materials Research Society Symposium on Phase Transformations Kinetics in Thin Films held in Anaheim, California from April 29 through May 1, 1991. This symposium provided a multidisciplinary forum for explorations, on experimental and theoretical levels, of thin film reactions and stability, phase nucleation and growth, and amorphization. The papers in this volume, refereed by the peer review process, are organized according to materials and techniques and do not reflect the order of presentations at the symposium. Symposium sessions were organized in the areas of thin-film crystallization, solid-state amorphization, interfacial reactions, solid-state transformations, phase-change optical media and ferroelectric thin films. Contributed papers ranged from theoretical determination of the limits to melt nucleation to commercial concerns of processing techniques for specific properties. Despite this breadth, the similarity of experimental techniques and thermodynamic underpinnings for most of the materials provided a common basis for discussions

  6. On the use of a charged tunnel layer as a hole collector to improve the efficiency of amorphous silicon thin-film solar cells

    International Nuclear Information System (INIS)

    A new concept, using a negatively charged tunnel layer as a hole collector, is proposed and theoretically investigated for application in amorphous silicon thin-film solar cells. The concept features a glass/transparent conductive oxide/ultra-thin negatively charged tunnel layer/intrinsic a-Si:H/n-doped a-Si:H/metal structure. The key feature of this so called t+-i-n structure is the introduction of a negatively charged tunnel layer (attracting holes from the intrinsic absorber layer), which substitutes the highly recombination active p-doped a-Si:H layer in a conventional p-i-n configuration. Atomic layer deposited aluminum oxide (ALD AlOx) is suggested as a potential candidate for such a tunnel layer. Using typical ALD AlOx parameters, a 27% relative efficiency increase (i.e., from 9.7% to 12.3%) is predicted theoretically for a single-junction a-Si:H solar cell on a textured superstrate. This prediction is based on parameters that reproduce the experimentally obtained external quantum efficiency and current-voltage characteristics of a conventional processed p-i-n a-Si:H solar cell, reaching 9.7% efficiency and serving as a reference. Subsequently, the p-doped a-Si:H layer is replaced by the tunnel layer (studied by means of numerical device simulation). Using a t+-i-n configuration instead of a conventional p-i-n configuration will not only increase the short-circuit current density (from 14.4 to 14.9 mA/cm2, according to our simulations), it also enhances the open-circuit voltage and the fill factor (from 917 mV to 1.0 V and from 74% to 83%, respectively). For this concept to work efficiently, a high work function front electrode material or a high interface charge is needed

  7. Electrochromic Properties of Li+-Intercalated Amorphous Tungsten (aWO(3-x)) and Titanium (aTiO(2-x)) Oxide Thin Films

    OpenAIRE

    Triana, Carlos A.; Granqvist, Claes-Göran; Niklasson, Gunnar

    2014-01-01

    We report on electrochromic properties of stoichiometric and oxygen-deficient amorphous films, denoted aWO(3-x) and aTiO(2-x), under Li+-ion-electron inter/deintercalation. Optical characterization of the films in their as-deposited, fully intercalated (dark), and bleached states were performed by in-situ optical transmittance measurements. We explore electrochromism and optical absorption phenomena in the context of oxygen deficiency and nanostructure. Studies by cyclic voltammetry suggest g...

  8. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  9. Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

    Energy Technology Data Exchange (ETDEWEB)

    Findikoglu, Alp T. (Los Alamos, NM); Jia, Quanxi (Los Alamos, NM); Arendt, Paul N. (Los Alamos, NM); Matias, Vladimir (Santa Fe, NM); Choi, Woong (Los Alamos, NM)

    2009-10-27

    A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

  10. Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells

    Directory of Open Access Journals (Sweden)

    Yang-Shin Lin

    2011-01-01

    Full Text Available The amorphous silicon/amorphous silicon (a-Si/a-Si tandem solar cells have attracted much attention in recent years, due to the high efficiency and low manufacturing cost compared to the single-junction a-Si solar cells. In this paper, the tandem cells are fabricated by high-frequency plasma-enhanced chemical vapor deposition (HF-PECVD at 27.1 MHz. The effects of the recombination layer and the i-layer thickness matching on the cell performance have been investigated. The results show that the tandem cell with a p+ recombination layer and i2/i1 thickness ratio of 6 exhibits a maximum efficiency of 9.0% with the open-circuit voltage (Voc of 1.59 V, short-circuit current density (Jsc of 7.96 mA/cm2, and a fill factor (FF of 0.70. After light-soaking test, our a-Si/a-Si tandem cell with p+ recombination layer shows the excellent stability and the stabilized efficiency of 8.7%.

  11. Coaxial carbon plasma gun deposition of amorphous carbon films

    International Nuclear Information System (INIS)

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented

  12. Coaxial carbon plasma gun deposition of amorphous carbon films

    Science.gov (United States)

    Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

    1984-01-01

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

  13. Evidences of the influence of the electronic stopping power in the elastic energy loss in thin films of amorphous carbon

    International Nuclear Information System (INIS)

    Measurements of deepness of implanted ions in carbon films, show the possibility that the energy elastic component given to the medium, could be affected by the ineslastic stopping parcel, which could cause a total stopping power, smaller than the expected. (A.C.A.S.)

  14. Electrochromic Properties of Li+-Intercalated Amorphous Tungsten (aWO3-x) and Titanium (aTiO2-x) Oxide Thin Films

    Science.gov (United States)

    Triana, C. A.; Granqvist, C. G.; Niklasson, G. A.

    2014-11-01

    We report on electrochromic properties of stoichiometric and oxygen-deficient amorphous films, denoted aWO3-x and aTiO2-x, under Li+-ion-electron inter/deintercalation. Optical characterization of the films in their as-deposited, fully intercalated (dark), and bleached states were performed by in-situ optical transmittance measurements. We explore electrochromism and optical absorption phenomena in the context of oxygen deficiency and nanostructure. Studies by cyclic voltammetry suggest good optical modulation and charge capacity upon Li+-ion-electron inter/deintercalation for almost stoichiometric films.

  15. Electrochromic Properties of Li+-Intercalated Amorphous Tungsten (aWO3-x) and Titanium (aTiO2-x) Oxide Thin Films

    International Nuclear Information System (INIS)

    We report on electrochromic properties of stoichiometric and oxygen-deficient amorphous films, denoted aWO3-x and aTiO2-x, under Li+-ion-electron inter/deintercalation. Optical characterization of the films in their as-deposited, fully intercalated (dark), and bleached states were performed by in-situ optical transmittance measurements. We explore electrochromism and optical absorption phenomena in the context of oxygen deficiency and nanostructure. Studies by cyclic voltammetry suggest good optical modulation and charge capacity upon Li+-ion-electron inter/deintercalation for almost stoichiometric films

  16. Carbon thin film thermometry

    Science.gov (United States)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  17. Laser annealing of amorphous carbon films

    International Nuclear Information System (INIS)

    Amorphous (a-C) Carbon thin films were deposited, using pulsed laser deposition (PLD) with a Nd:YAG laser (1064 nm, 7 ns), from a pyrolytic graphite target, on silicon and refractory metal (Mo) substrates to a film thickness of 55, 400 and 500 nm. Samples were grown at RT and then annealed by a laser annealing technique, to reduce residual stress and induce a locally confined 'graphitization' process. The films were exposed to irradiation, in vacuum, by a Nd:YAG pulsed laser, operating at different wavelengths (VIS, N-UV) and increasing values of energy from 6-100 mJ/pulse. The thinner films were completely destroyed by N-UV laser treatment also at lower energies, owing to the almost direct propagation of heat to the Si substrate with melting and ruinous blistering effects. For thicker films the Raman micro-analysis evidenced the influence of laser treatments on the sp3/sp2 content evolution, and established the formation of aromatic nano-structures of average dimension 4.1-4.7 nm (derived from the ID/IG peak ratio), at fluence values round 50 mJ/cm2 for N-UV and 165 mJ/cm2 for VIS laser irradiation. Higher fluences were not suitable for a-Carbon 'graphitization', since a strong ablation process was the prominent effect of irradiation. Grazing incidence XRD (GI-XRD) used to evaluate the dimension and texturing of nano-particles confirmed the findings of Raman analysis. The effects of irradiation on surface morphology were studied by SEM analysis

  18. Applications of thin-film photovoltaics for space

    Science.gov (United States)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The authors discuss the potential applications of thin-film polycrystalline and amorphous cells for space. There have been great advances in thin-film solar cells for terrestrial applications. Transfer of this technology to space applications could result in ultra low-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper indium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon arrays. The possibility of using thin-film multi-bandgap cascade solar cells is discussed.

  19. Thin-Film Photovoltaics: Status and Applications to Space Power

    Science.gov (United States)

    Landis, Geoffrey A.; Hepp, Aloysius F.

    1991-01-01

    The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

  20. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    International Nuclear Information System (INIS)

    We have studied the effect of top gate bias (VTG) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm2 intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the VTG from −15 to +15 V. By changing VTG from negative to positive, the Fermi level (EF) shifts toward conduction band edge (EC), which substantially controls the conversion of neutral vacancy to charged one (VO → VO+/VO2+ + e−/2e−), peroxide (O22−) formation or conversion of ionized interstitial (Oi2−) to neutral interstitial (Oi), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows −2.7 V shift at VTG = −15 V, which gradually decreases to −0.42 V shift at VTG = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (VO+/VO2+/O22−/Oi) and/or hole trapping in the a-IGZO /interfaces

  1. Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell backed by a metallic surface-relief grating.

    Science.gov (United States)

    Solano, Manuel; Faryad, Muhammad; Hall, Anthony S; Mallouk, Thomas E; Monk, Peter B; Lakhtakia, Akhlesh

    2013-02-10

    The rigorous coupled-wave approach was used to compute the plane-wave absorptance of a thin-film tandem solar cell with a metallic surface-relief grating as its back reflector. The absorptance is a function of the angle of incidence and the polarization state of incident light; the free-space wavelength; and the period, duty cycle, the corrugation height, and the shape of the unit cell of the surface-relief grating. The solar cell was assumed to be made of hydrogenated amorphous-silicon alloys and the back reflector of bulk aluminum. The incidence and the grating planes were taken to be identical. The AM1.5 solar irradiance spectrum was used for computations in the 400-1100 nm wavelength range. Inspection of parametric plots of the solar-spectrum-integrated (SSI) absorption efficiency and numerical optimization using the differential evolution algorithm were employed to determine the optimal surface-relief grating. For direct insolation, the SSI absorption efficiency is maximizable by appropriate choices of the period, the duty cycle, and the corrugation height, regardless of the shape of the corrugation in each unit cell of the grating. A similar conclusion also holds for diffuse insolation, but the maximum efficiency for diffuse insolation is about 20% smaller than for direct insolation. Although a tin-doped indium-oxide layer at the front and an aluminum-doped zinc-oxide layer between the semiconductor material and the backing metallic layer change the optimal depth of the periodic corrugations, the optimal period of the corrugations does not significantly change. PMID:23400058

  2. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

    2015-12-07

    We have studied the effect of top gate bias (V{sub TG}) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm{sup 2} intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the V{sub TG} from −15 to +15 V. By changing V{sub TG} from negative to positive, the Fermi level (E{sub F}) shifts toward conduction band edge (E{sub C}), which substantially controls the conversion of neutral vacancy to charged one (V{sub O} → V{sub O}{sup +}/V{sub O}{sup 2+} + e{sup −}/2e{sup −}), peroxide (O{sub 2}{sup 2−}) formation or conversion of ionized interstitial (O{sub i}{sup 2−}) to neutral interstitial (O{sub i}), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows −2.7 V shift at V{sub TG} = −15 V, which gradually decreases to −0.42 V shift at V{sub TG} = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (V{sub O}{sup +}/V{sub O}{sup 2+}/O{sub 2}{sup 2−}/O{sub i}) and/or hole trapping in the a-IGZO /interfaces.

  3. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  4. Effects of interface and bulk properties of gate-dielectric on the performance and stability of hydrogenated amorphous silicon thin-film transistors

    Science.gov (United States)

    Ando, M.; Wakagi, M.; Onisawa, K.

    2015-12-01

    In order to investigate the effects of interface and bulk properties of gate insulator on the threshold voltage (Vth) and the gate-bias induced instability of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs), four kinds of TFT structures were fabricated with SiNx and SiOx insulators stacked to make different combinations of the bulk and interface in the gate-dielectric layers. It was found that the Vth and the stability are independently controlled by tuning stoichiometry and thickness of the SiOx insertion layer between a-Si:H and SiNx. In TFTs with SiOx insertion layer of 50 nm thickness, on increasing oxygen/silicon (O/Si = x) ratio from 1.7 to 1.9, Vth increased from 0 V to 9 V. In these TFTs with a relatively thick SiOx insertion layer, positive Vth shift with negative bias stress was observed, confirmed to be due to defect creation in a-Si:H with the thermalization barrier energy of 0.83 eV. On reducing the thickness of the SiOx insertion layer down to approximately 1 nm, thin enough for hole injection through SiOx by tunneling effect, stable operation was obtained while keeping the high Vth value under negative stress bias. These results are consistently explained as follows: (1) the high value for Vth is caused by the dipole generated at the interface between a-Si:H and SiOx; and (2) two causes for Vth shift, charge injection to the gate insulator and defect creation in a-Si:H, are mutually related to each other through the "effective bias stress," Vbseff = Vbs - ΔVfb (Vbs: applied bias stress and ΔVfb: flat band voltage shift due to the charge injection). It was experimentally confirmed that there should be an optimum thickness of SiOx insertion layer of approximately 1 nm with stable high Vth, where enhanced injection increases ΔVfb, reduces Vbseff to reduce defect creation, and totally minimizes Vth shift.

  5. Effect of heat treatment on the structural and optical properties of amorphous Sb{sub 2}Se{sub 3} and Sb{sub 2}Se{sub 2}S thin films

    Energy Technology Data Exchange (ETDEWEB)

    El-Sayad, E.A., E-mail: el_sayad1@yahoo.co.u [Solid State Physics Department, National Research Center, Dokki, Cairo (Egypt); Moustafa, A.M. [Solid State Physics Department, National Research Center, Dokki, Cairo (Egypt); Marzouk, S.Y. [Electron Microscope and Thin Films Department, National Research Center, Dokki, Cairo (Egypt)

    2009-05-01

    Nearly stoichiometric thin films of Sb{sub 2}Se{sub 3} and Sb{sub 2}Se{sub 2}S were deposited, by conventional thermal evaporation of the presynthesized materials, on glass substrates held at room temperature. X-ray diffraction studies on the annealed films, at T{sub a}=373, 423, and 473 K, revealed an amorphous-to-crystalline phase transition at T{sub a}=423 and 473 K for Sb{sub 2}Se{sub 3} and Sb{sub 2}Se{sub 2}S, respectively. The crystal structure of the polycrystalline films of Sb{sub 2}Se{sub 3} and Sb{sub 2}Se{sub 2}S is single-phase of an orthorhombic type structure, with space group Pbnm (62) and Z=4, as that of their source materials. The optical constants (n,k) and the thickness (t) of the investigated films were determined from optical transmittance data, in the spectral range 600-2500 nm using the Swanepoel method. The dispersion parameters of the indicated compositions were determined from the analysis of the refractive index. The analysis of the optical absorption spectra revealed that the polycrystalline films exhibited both direct and indirect energy gaps, on the contrary to the amorphous films which showed only a non-direct energy gap with a relatively higher Urbach's tail.

  6. Amorphous In–Ga–Zn–O thin-film transistor active pixel sensor x-ray imager for digital breast tomosynthesis

    International Nuclear Information System (INIS)

    Purpose: The breast cancer detection rate for digital breast tomosynthesis (DBT) is limited by the x-ray image quality. The limiting Nyquist frequency for current DBT systems is around 5 lp/mm, while the fine image details contained in the high spatial frequency region (>5 lp/mm) are lost. Also today the tomosynthesis patient dose is high (0.67–3.52 mGy). To address current issues, in this paper, for the first time, a high-resolution low-dose organic photodetector/amorphous In–Ga–Zn–O thin-film transistor (a-IGZO TFT) active pixel sensor (APS) x-ray imager is proposed for next generation DBT systems. Methods: The indirect x-ray detector is based on a combination of a novel low-cost organic photodiode (OPD) and a cesium iodide-based (CsI:Tl) scintillator. The proposed APS x-ray imager overcomes the difficulty of weak signal detection, when small pixel size and low exposure conditions are used, by an on-pixel signal amplification with a significant charge gain. The electrical performance of a-IGZO TFT APS pixel circuit is investigated by SPICE simulation using modified Rensselaer Polytechnic Institute amorphous silicon (a-Si:H) TFT model. Finally, the noise, detective quantum efficiency (DQE), and resolvability of the complete system are modeled using the cascaded system formalism. Results: The result demonstrates that a large charge gain of 31–122 is achieved for the proposed high-mobility (5–20 cm2/V s) amorphous metal-oxide TFT APS. The charge gain is sufficient to eliminate the TFT thermal noise, flicker noise as well as the external readout circuit noise. Moreover, the low TFT (<10−13 A) and OPD (<10−8 A/cm2) leakage currents can further reduce the APS noise. Cascaded system analysis shows that the proposed APS imager with a 75 μm pixel pitch can effectively resolve the Nyquist frequency of 6.67 lp/mm, which can be further improved to ∼10 lp/mm if the pixel pitch is reduced to 50 μm. Moreover, the detector entrance exposure per

  7. Amorphous In–Ga–Zn–O thin-film transistor active pixel sensor x-ray imager for digital breast tomosynthesis

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Chumin; Kanicki, Jerzy, E-mail: kanicki@eecs.umich.edu [Solid-State Electronic Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2014-09-15

    Purpose: The breast cancer detection rate for digital breast tomosynthesis (DBT) is limited by the x-ray image quality. The limiting Nyquist frequency for current DBT systems is around 5 lp/mm, while the fine image details contained in the high spatial frequency region (>5 lp/mm) are lost. Also today the tomosynthesis patient dose is high (0.67–3.52 mGy). To address current issues, in this paper, for the first time, a high-resolution low-dose organic photodetector/amorphous In–Ga–Zn–O thin-film transistor (a-IGZO TFT) active pixel sensor (APS) x-ray imager is proposed for next generation DBT systems. Methods: The indirect x-ray detector is based on a combination of a novel low-cost organic photodiode (OPD) and a cesium iodide-based (CsI:Tl) scintillator. The proposed APS x-ray imager overcomes the difficulty of weak signal detection, when small pixel size and low exposure conditions are used, by an on-pixel signal amplification with a significant charge gain. The electrical performance of a-IGZO TFT APS pixel circuit is investigated by SPICE simulation using modified Rensselaer Polytechnic Institute amorphous silicon (a-Si:H) TFT model. Finally, the noise, detective quantum efficiency (DQE), and resolvability of the complete system are modeled using the cascaded system formalism. Results: The result demonstrates that a large charge gain of 31–122 is achieved for the proposed high-mobility (5–20 cm{sup 2}/V s) amorphous metal-oxide TFT APS. The charge gain is sufficient to eliminate the TFT thermal noise, flicker noise as well as the external readout circuit noise. Moreover, the low TFT (<10{sup −13} A) and OPD (<10{sup −8} A/cm{sup 2}) leakage currents can further reduce the APS noise. Cascaded system analysis shows that the proposed APS imager with a 75 μm pixel pitch can effectively resolve the Nyquist frequency of 6.67 lp/mm, which can be further improved to ∼10 lp/mm if the pixel pitch is reduced to 50 μm. Moreover, the

  8. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  9. Investigation of optical and electrical properties of amorphous Se{sub 95−x}S{sub x}Zn{sub 5}(x=0.2, 2, 5 and 10) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nasir, Mohd, E-mail: nasir-sphy@yahoo.com; Ahmad, Shabir; Zulfequar, M., E-mail: zulfequarphy@rediffmail.com [Department of physics, Jamia Millia Islamia, New Delhi-110025 (India)

    2015-08-28

    In this study, we reported that the optical and electrical analysis of amorphous Se{sub 90-x}S{sub x}Zn{sub 5} (x=0.2, 2, 5, 10) thin films. Bulk samples of the investigated material were prepared by melt quenching technique. Thin films of ~ 300nm thickness were deposited on cleaned glass substrates by thermal evaporation technique. The morphological study of the investigated material in powder form carried out by scanning electron microscopy (SEM) confirms the disorder of the material increases at lower sulfur doping (up to 5%) whereas at higher (S) doping (10%) the defects of the material decreases. The optical parameters were estimated from optical absorption spectra data measured from UV-Vis-spectrophotometer in the wavelength range 200-900 nm. It was found that the value of optical band gap (E{sub g}) of the investigated thin films decreases up to lower S doping and increases at higher (S) doping. The other optical parameters such as absorption coefficient (α) and extinction coefficient (K) increases up to lower S doping and decreases at higher S doping. This remarkable change in the values of optical parameters was interpreted on the basis of model proposed by Davis and Mott. Electrical parameters of the investigated thin films were carried out in the temperature range 309-370 K. Analysis of data shows activation energy decreases with the increase of concentration of (S) increases up to 5% and at 10% it increases again.

  10. Pyrolytic transformation from polydihydrosilane to hydrogenated amorphous silicon film

    International Nuclear Information System (INIS)

    The fabrication of thin film silicon devices based on solution processes rather than on conventional vacuum processes is of substantial interest since cost reductions may result. Using a solution process, we coated substrates with polydihydrosilane solution and studied the pyrolytic transformation of the material into hydrogenated amorphous silicon (a-Si:H). From thermal gravimetry and differential thermal analysis data a significant reduction in weight of the material and a construction of Si-Si bonds are concluded for the pyrolysis temperature Tp = 270 to 360 °C. The appearance of amorphous silicon phonon bands in Raman spectra for films prepared at Tp ≥ 330 °C suggests the construction of a three-dimensional amorphous silicon network. Films prepared at Tp ≥ 360 °C exhibit a hydrogen content near 10 at.% and an optical gap near 1.6 eV similar to device-grade vacuum processed a-Si:H. However, the infrared microstructure factor, the spin density, and the photosensitivity require significant improvements. - Highlights: ► We fabricate hydrogenated amorphous silicon (a-Si:H) films by a solution process. ► The a-Si:H films are prepared by pyrolytic transformation in polysilane solution. ► We investigate basic properties in relation to the pyrolysis temperature. ► Raman spectra, hydrogen content, and optical gap are similar to device-grade a-Si:H. ► Microstructure factor, spin density, and photoconductivity show poor quality.

  11. Optical multilayer films based on an amorphous fluoropolymer

    International Nuclear Information System (INIS)

    Multilayered coatings were made by physical vapor deposition (PVD) of a perfluorinated amorphous polymer, Teflon AF2400, and with other optical materials. A high reflector for 1064 nm light was made with ZnS and AF2400. An all-organic 1064 nm reflector was made from AF2400 and polyethylene. Oxide (HfO2 and SiO2) compatibility with AF2400 was also tested. The multilayer morphologies were influenced by coating stress and unintentional temperature rises from the PVD process. Analysis by liquid nuclear magnetic resonance of the thin films showed slight compositional variations between the coating and starting materials of perfluorinated amorphous polymers

  12. Thin-film solar cells. Duennschichtsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Bloss, W.H.; Pfisterer, F.; Schock, H.W. (Stuttgart Univ. (Germany, F.R.). Inst. fuer Physikalische Elektronik)

    1990-01-01

    The authors present the state of the art in research and development, technology, production and marketing, and of the prospects of thin-film solar cells. Thin-film solar cells most used at present are based on amorphous silicon and on the compound semiconductors CuInSe{sub 2} and CdTe. Efficiencies in excess 12% have been achieved (14.1% with CuInSe{sub 2}). Stability is the main problem with amorphous silicon. Thin-film solar cells made from compound semiconductors do not have this problem, though their cost-effective series production needs to be shown still. The development potential of the three types mentioned will be ca. 30% in terms of efficiency: in terms of production cost, it is estimated with some certainty to be able to reach the baseline of 1 DM/Watt peak output (W{sub p}). (orig.).

  13. Ferroelectric thin films

    International Nuclear Information System (INIS)

    The area of ferroelectric thin films has expanded rapidly recently with the advent of high quality multi-oxide deposition technology. Advances in thin film quality has resulted in the realization of new technologies not achievable through classical bulk ceramic processing techniques. An example of this progress is the co-processing of ferroelectric thin films with standard semiconductor silicon and GaAs integrated circuits for radiation hard, non-volatile memory products. While the development of this class of products is still embryonic, the forecasted market potential is rapidly out distancing the combined developmental effort. Historically the greatest use of bulk ferroelectric material has been in sensor technology, utilizing the pyroelectric and piezoelectric properties of the material. By comparison, a relatively small development effort has been reported for ferroelectric thin film senor technology, a field sure to provide exciting advances in the future. The papers in this proceedings volume were presented at the first symposium dedicated to the field of ferroelectric thin films held by the Materials Research Society at the Spring 1990 Meeting in San Francisco, CA, April 16-20, 1990. The symposium was designed to provide a comprehensive tutorial covering the newest advances of ferroelectric thin films, including material systems, new deposition techniques and physical, electrical and electro-optic characterization

  14. Pyrolytic transformation from polydihydrosilane to hydrogenated amorphous silicon film

    OpenAIRE

    Masuda, Takashi; Matsuki, Yasuo; Shimoda, Tatsuya

    2012-01-01

    The fabrication of thin film silicon devices based on solution processes rather than on conventional vacuum processes is of substantial interest since cost reductions may result. Using a solution process, we coated substrates with polydihydrosilane solution and studied the pyrolytic transformation of the material into hydrogenated amorphous silicon (a-Si:H). From thermal gravimetry and differential thermal analysis data a significant reduction in weight of the material and a construction of S...

  15. Chalcogenide thin film materials for next generation data storage

    OpenAIRE

    Simpson, Robert E.

    2008-01-01

    Data can be stored in the form of amorphous and crystalline marks within a chalcogenide thin film. Commonly Ge. Therefore Ga:La:S:Cu shows potential as a future electrical phase change data storage material.

  16. Broadband back grating design for thin film solar cells

    KAUST Repository

    Janjua, Bilal

    2013-01-01

    In this paper, design based on tapered circular grating structure was studied, to provide broadband enhancement in thin film amorphous silicon solar cells. In comparison to planar structure an absorption enhancement of ~ 7% was realized.

  17. Evaporated VOx Thin Films

    Science.gov (United States)

    Stapinski, Tomasz; Leja, E.

    1989-03-01

    VOx thin films on glass were obtained by thermal evaporation of V205, powder. The structural investigations were carried out with the use of X-ray diffractometer. The electrical properties of the film were examined by means of temperature measurements of resistivity for the samples heat-treated in various conditions. Optical transmission and reflection spectra of VOX films of various composition showed the influence of the heat treatment.

  18. Contribution of thickness dependent void fraction and TiSi{sub x}O{sub y} interlayer to the optical properties of amorphous TiO2 thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Fan; Zhang, Rong-Jun, E-mail: rjzhang@fudan.edu.cn; Zheng, Yu-Xiang, E-mail: yxzheng@fudan.edu.cn; Xu, Zi-Jie; Zhang, Dong-Xu; Wang, Zi-Yi; Yu, Xiang; Chen, Liang-Yao

    2013-12-02

    The optical properties of TiO{sub 2} thin films prepared by electron beam evaporation were studied by spectroscopic ellipsometry and analyzed quantitatively using effective medium approximation theory and an effective series capacitance model. The refractive indices of TiO{sub 2} are essentially constant and approach to those of bulk TiO{sub 2} for films thicker than 40 nm, but drop sharply with a decrease in thickness from 40 to 5.5 nm. This phenomenon can be interpreted quantitatively by the thickness dependence of the void fraction and interfacial oxide region. The optical band gaps calculated from Tauc law increase with an increase of film thickness, and can be attributed to the contribution of disorder effect. - Highlights: • Amorphous TiO{sub 2} thin films fabricated on Si substrate by electron beam evaporation • The refractive index and band gap are obtained from spectroscopic ellipsometry. • The refractive index decreases with decreasing film thickness. • Effective medium approximation theory and effective series capacitance model introduced • A band gap increases gradually with an increase in film thickness.

  19. Development of Tandem Amorphous/Microcrystalline Silicon Thin-Film Large-Area See-Through Color Solar Panels with Reflective Layer and 4-Step Laser Scribing for Building-Integrated Photovoltaic Applications

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar modules were successfully designed and developed for building-integrated photovoltaic applications. Novel and key technologies of reflective layers and 4-step laser scribing were researched, developed, and introduced into the production line to produce solar panels with various colors, such as purple, dark blue, light blue, silver, golden, orange, red wine, and coffee. The highest module power is 105 W and the highest visible light transmittance is near 20%.

  20. Synthesizing skyrmion bound pairs in Fe-Gd thin films

    Science.gov (United States)

    Lee, J. C. T.; Chess, J. J.; Montoya, S. A.; Shi, X.; Tamura, N.; Mishra, S. K.; Fischer, P.; McMorran, B. J.; Sinha, S. K.; Fullerton, E. E.; Kevan, S. D.; Roy, S.

    2016-07-01

    We show that properly engineered amorphous Fe-Gd alloy thin films with perpendicular magnetic anisotropy exhibit bound pairs of like-polarity, opposite helicity skyrmions at room temperature. Magnetic mirror symmetry planes present in the stripe phase, instead of chiral exchange, determine the internal skyrmion structure and the net achirality of the skyrmion phase. Our study shows that stripe domain engineering in amorphous alloy thin films may enable the creation of skyrmion phases with technologically desirable properties.

  1. The 1989 progress report: interface physics and thin films

    International Nuclear Information System (INIS)

    The 1989 progress report of the laboratory of Interface Physics and Thin Films of the Polytechnic School (France) is presented. The properties and the interfaces of thin films, which show optoelectronic activity, are studied. The materials investigated are hydrogenated amorphous silicon compounds, amorphous compounds of silicon-germanium, silicon-carbon and silicon-mitrogen. The techniques developed for manufacturing and characterizing those materials are included. The published papers, the conferences and the Laboratory staff are listed

  2. Microstructural evolution of tungsten oxide thin films

    Science.gov (United States)

    Hembram, K. P. S. S.; Thomas, Rajesh; Rao, G. Mohan

    2009-10-01

    Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 °C were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a "instability wheel" model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

  3. Microstructural evolution of tungsten oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hembram, K.P.S.S., E-mail: hembram@isu.iisc.ernet.in [Department of Instrumentation, Indian Institute of Science, Bangalore - 560 012 (India); Theoretical Science Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore - 560064 (India); Thomas, Rajesh; Rao, G. Mohan [Department of Instrumentation, Indian Institute of Science, Bangalore - 560 012 (India)

    2009-10-30

    Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 deg. were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a 'instability wheel' model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

  4. Electrical characteristics of vapor deposited amorphous MoS{sub 2} two-terminal structures and back gate thin film transistors with Al, Au, Cu and Ni-Au contacts

    Energy Technology Data Exchange (ETDEWEB)

    Kouvatsos, Dimitrios N.; Papadimitropoulos, Georgios; Spiliotis, Thanassis; Vasilopoulou, Maria; Davazoglou, Dimitrios [NCSR Demokritos, Institute of Nanoscience and Nanotechnology, Attikis (Greece); Barreca, Davide [CNR-IENI, Padova (Italy); Department of Chemistry, Padova University (Italy); INSTM, Padova (Italy); Gasparotto, Alberto [Department of Chemistry, Padova University (Italy); INSTM, Padova (Italy)

    2015-07-15

    Amorphous molybdenum sulphide (a-MoS{sub 2}) thin films were deposited at near room temperature on oxidized silicon substrates and were electrically characterized with the use of two-terminal structures and of back-gated thin film transistors utilizing the substrate silicon as gate. Current-voltage characteristics were extracted for various metals used as pads, showing significant current variations attributable to different metal-sulphide interface properties and contact resistances, while the effect of a forming gas anneal was determined. With the use of heavily doped silicon substrates and aluminum backside deposition, thin film transistor (TFT) structures with the a-MoS{sub 2} film as active layer were fabricated and characterized. Transfer characteristics showing a gate field effect, despite a leakage often present, were extracted for these devices, indicating that high mobility devices can be fabricated. SEM and EDXA measurements were also performed in an attempt to clarify issues related to material properties and fabrication procedures, so as to achieve a reliable and optimized a-MoS{sub 2} TFT fabrication process. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Preparation, structure, thermal and optical properties of thin amorphous films of the system As-In-S pure and Sm doped

    Czech Academy of Sciences Publication Activity Database

    Frumarová, Božena; Frumar, M.; Šourková, P.; Vlček, Milan; Vlček, M.

    Cape Canaveral : The American Ceramic Society, 2004, s. 36. [International Symposium on Non-Oxide and Novel Optical Glass es/14./. Cape Canaveral (US), 07.11.2004-12.11.2004] R&D Projects: GA AV ČR KSK2050602 Institutional research plan: CEZ:AV0Z4050913 Keywords : chalcogenide thin films * laser deposition Subject RIV: CA - Inorganic Chemistry

  6. Low-Temperature Annealing Induced Amorphization in Nanocrystalline NiW Alloy Films

    Directory of Open Access Journals (Sweden)

    Z. Q. Chen

    2013-01-01

    Full Text Available Annealing induced amorphization in sputtered glass-forming thin films was generally observed in the supercooled liquid region. Based on X-ray diffraction and transmission electron microscope (TEM analysis, however, here, we demonstrate that nearly full amorphization could occur in nanocrystalline (NC sputtered NiW alloy films annealed at relatively low temperature. Whilst the supersaturation of W content caused by the formation of Ni4W phase played a crucial role in the amorphization process of NiW alloy films annealed at 473 K for 30 min, nearly full amorphization occurred upon further annealing of the film for 60 min. The redistribution of free volume from amorphous regions into crystalline regions was proposed as the possible mechanism underlying the nearly full amorphization observed in NiW alloys.

  7. Amorphous grain boundary layers in the ferromagnetic nanograined ZnO films

    International Nuclear Information System (INIS)

    Pure ZnO thin films were obtained by the wet chemistry (“liquid ceramics”) method from the butanoate precursors. Films consist of dense equiaxial nanograins and reveal ferromagnetic behaviour. The structure of the ZnO films was studied by the high-resolution transmission electron microscopy. The intergranular regions in the nanograined ZnO films obtained by the “liquid ceramics” method are amorphous. It looks like fine areas of the second amorphous phase which wets (covers) some of the ZnO/ZnO grain boundaries. Most probably these amorphous intergranular regions contain the defects which are responsible for the ferromagnetic behaviour.

  8. Overview and Challenges of Thin Film Solar Electric Technologies

    Energy Technology Data Exchange (ETDEWEB)

    Ullal, H. S.

    2008-12-01

    In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

  9. High Performance Bottom-Gate-Type Amorphous InGaZnO Flexible Transparent Thin-Film Transistors Deposited on PET Substrates at Low Temperature

    Science.gov (United States)

    Lee, Hsin-Ying; Ye, Wan-Yi; Lin, Yung-Hao; Lou, Li-Ren; Lee, Ching-Ting

    2014-01-01

    The InGaZnO channel layer of bottom-gate-type flexible transparent thin-film transistors was deposited on polyethylene terephthalate substrates using a magnetron radio frequency cosputter system with a single InGaZnO target. The composition of the InGaZnO channel layer was controlled by sputtering at various Ar/O2 gas ratios. A 15-nm-thick SiO y insulator film was used to passivate the InGaZnO channel layer. Much better performances of the passivated devices were obtained, which verified the passivation function. To study the bending stability of the resulting flexible transparent thin-film transistors, a stress test with a bending radius of 1.17 cm for 1,500 s was carried out, which showed a variation in the effective filed-effect mobility and the threshold voltage of the unpassivated and passivated devices being maintained within 10 and 8%, respectively.

  10. A transmission electron microscopy and X-ray photoelectron spectroscopy study of annealing induced γ-phase nucleation, clustering, and interfacial dynamics in reactively sputtered amorphous alumina thin films

    International Nuclear Information System (INIS)

    Pure α-Al2O3 exhibits a very high degree of thermodynamical stability among all metal oxides and forms an inert oxide scale in a range of structural alloys at high temperatures. We report that amorphous Al2O3 thin films sputter deposited over crystalline Si instead show a surprisingly active interface. On annealing, crystallization begins with nuclei of a phase closely resembling γ-Alumina forming almost randomly in an amorphous matrix, and with increasing frequency near the substrate/film interface. This nucleation is marked by the signature appearance of sharp (400) and (440) reflections and the formation of a diffuse diffraction halo with an outer maximal radius of ≈0.23 nm enveloping the direct beam. The microstructure then evolves by a cluster-coalescence growth mechanism suggestive of swift nucleation and sluggish diffusional kinetics, while locally the Al ions redistribute slowly from chemisorbed and tetrahedral sites to higher anion coordinated sites. Chemical state plots constructed from XPS data and simple calculations of the diffraction patterns from hypothetically distorted lattices suggest that the true origins of the diffuse diffraction halo are probably related to a complex change in the electronic structure spurred by the a-γ transformation rather than pure structural disorder. Concurrent to crystallization within the film, a substantially thick interfacial reaction zone also builds up at the film/substrate interface with the excess Al acting as a cationic source

  11. A transmission electron microscopy and X-ray photoelectron spectroscopy study of annealing induced γ-phase nucleation, clustering, and interfacial dynamics in reactively sputtered amorphous alumina thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A. K. Nanda, E-mail: aknk27@yahoo.com; Subramanian, B. [ECMS Division, Central Electro Chemical Research Institute, Karaikudi (India); Prasanna, S. [Department of Physics, PSG College of Technology, Coimbatore (India); Jayakumar, S. [Department of Physics, PSG Institute of Technology and Applied Research, Coimbatore (India); Rao, G. Mohan [Department of Instrumentation, Indian Institute of Science, Bangalore (India)

    2015-03-28

    Pure α-Al{sub 2}O{sub 3} exhibits a very high degree of thermodynamical stability among all metal oxides and forms an inert oxide scale in a range of structural alloys at high temperatures. We report that amorphous Al{sub 2}O{sub 3} thin films sputter deposited over crystalline Si instead show a surprisingly active interface. On annealing, crystallization begins with nuclei of a phase closely resembling γ-Alumina forming almost randomly in an amorphous matrix, and with increasing frequency near the substrate/film interface. This nucleation is marked by the signature appearance of sharp (400) and (440) reflections and the formation of a diffuse diffraction halo with an outer maximal radius of ≈0.23 nm enveloping the direct beam. The microstructure then evolves by a cluster-coalescence growth mechanism suggestive of swift nucleation and sluggish diffusional kinetics, while locally the Al ions redistribute slowly from chemisorbed and tetrahedral sites to higher anion coordinated sites. Chemical state plots constructed from XPS data and simple calculations of the diffraction patterns from hypothetically distorted lattices suggest that the true origins of the diffuse diffraction halo are probably related to a complex change in the electronic structure spurred by the a-γ transformation rather than pure structural disorder. Concurrent to crystallization within the film, a substantially thick interfacial reaction zone also builds up at the film/substrate interface with the excess Al acting as a cationic source.

  12. Heterogeneity in Polymer Thin Films

    OpenAIRE

    Kanaya, Toshiji; Inoue, Rintaro; Nishida, Koji

    2011-01-01

    In the last two decades very extensive studies have been performed on polymer thin films to reveal very interesting but unusual properties. One of the most interesting findings is the decrease in glass transition temperature Tg with film thickness in polystyrene (PS) thin film supported on Si substrate. Another interesting finding is apparent negative thermal expansivity in glassy state for thin films below ∼25 nm. In order to understand the unusual properties of polymer thin films we have st...

  13. Thin films and nanomaterials

    International Nuclear Information System (INIS)

    The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

  14. Superconductivity in Sulfur-Doped Amorphous Carbon Films

    OpenAIRE

    Felner, I.; Wolf, O; Millo, O.

    2013-01-01

    Following our previous investigations on superconductivity in amorphous carbon (aC) based systems; we have prepared thin composite aC-W films using electron-beam induced deposition. The films did not show any sign for superconductivity above 5 K. However, local, non-percolative, superconductivity emerged at Tc = 34.4 K after treatment with sulfur at 250 C for 24 hours. The superconducting features in the magnetization curves were by far sharper compared to our previous results, and the shield...

  15. Thin film temperature sensor

    Science.gov (United States)

    Grant, H. P.; Przybyszewski, J. S.

    1980-01-01

    Thin film surface temperature sensors were developed. The sensors were made of platinum-platinum/10 percent rhodium thermocouples with associated thin film-to-lead wire connections and sputtered on aluminum oxide coated simulated turbine blades for testing. Tests included exposure to vibration, low velocity hydrocarbon hot gas flow to 1250 K, and furnace calibrations. Thermal electromotive force was typically two percent below standard type S thermocouples. Mean time to failure was 42 hours at a hot gas flow temperature of 1250 K and an average of 15 cycles to room temperature. Failures were mainly due to separation of the platinum thin film from the aluminum oxide surface. Several techniques to improve the adhesion of the platinum are discussed.

  16. Field-emission transmission electron microscopy study of the reaction sequence between Sn–Ag–Cu alloy and an amorphous Pd(P) thin film in microelectronic packaging

    Energy Technology Data Exchange (ETDEWEB)

    Ho, C.E., E-mail: ceho1975@hotmail.com; Wang, C.C.; Rahman, M.A.; Lin, Y.C.

    2013-02-01

    The reaction sequence between liquid Sn–3Ag–0.5Cu solder and solid Au/Pd(P)/electrolytic-Ni films was carefully examined using a field-emission transmission electron microscope at different exposure times (15 s, 30 s, and 120 s). After 15 s of exposure, the uppermost layer of Au was removed from the interface and a portion of the Pd(P) film remained. At this stage of the reaction, the predominant products were PdSn{sub 3} and Pd{sub 3}P. After 30 s of exposure, Pd(P) was completely exhausted, and three additional intermetallic species, including Pd–Sn–P, Pd{sub 6}P, and Pd{sub 15}P{sub 2}, nucleated. After 120 s of exposure, the aforementioned species were destroyed, and Cu and Ni were involved in the reaction. The predominant product became (Cu,Ni){sub 6}Sn{sub 5}, and the nucleation of a nanocrystalline Ni{sub 2}SnP layer in the middle of (Cu,Ni){sub 6}Sn{sub 5} resulted. These results suggest that Pd and P play a vital role in the early stage of soldering reaction, even though the Pd(P) film is only a few submicrons thick and its P content is quite low (2–5%). - Highlights: ► Reaction sequence between an amorphous Pd(P) film and Sn–Ag–Cu alloy. ► Solder reaction assisted the crystallization of amorphous Pd(P) into Pd–P phase(s). ► Direct proof of the Pd(P)-induced Ni{sub 2}SnP nucleation. ► Pd and P both played a central role in the early stage of soldering reaction.

  17. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  18. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  19. Thin films for material engineering

    Science.gov (United States)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  20. Development of Amorphous/Microcrystalline Silicon Tandem Thin-Film Solar Modules with Low Output Voltage, High Energy Yield, Low Light-Induced Degradation, and High Damp-Heat Reliability

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film solar modules with low output voltage, high energy yield, low light-induced degradation, and high damp-heat reliability were successfully designed and developed. Several key technologies of passivation, transparent-conducting-oxide films, and cell and segment laser scribing were researched, developed, and introduced into the production line to enhance the performance of these low-voltage modules. A 900 kWp photovoltaic system with these low-voltage panels was installed and its performance ratio has been simulated and projected to be 92.1%, which is 20% more than the crystalline silicon and CdTe counterparts.

  1. Crystallization of zirconia based thin films.

    Science.gov (United States)

    Stender, D; Frison, R; Conder, K; Rupp, J L M; Scherrer, B; Martynczuk, J M; Gauckler, L J; Schneider, C W; Lippert, T; Wokaun, A

    2015-07-28

    The crystallization kinetics of amorphous 3 and 8 mol% yttria stabilized zirconia (3YSZ and 8YSZ) thin films grown by pulsed laser deposition (PLD), spray pyrolysis and dc-magnetron sputtering are explored. The deposited films were heat treated up to 1000 °C ex situ and in situ in an X-ray diffractometer. A minimum temperature of 275 °C was determined at which as-deposited amorphous PLD grown 3YSZ films fully crystallize within five hours. Above 325 °C these films transform nearly instantaneously with a high degree of micro-strain when crystallized below 500 °C. In these films the t'' phase crystallizes which transforms at T > 600 °C to the t' phase upon relaxation of the micro-strain. Furthermore, the crystallization of 8YSZ thin films grown by PLD, spray pyrolysis and dc-sputtering are characterized by in situ XRD measurements. At a constant heating rate of 2.4 K min(-1) crystallization is accomplished after reaching 800 °C, while PLD grown thin films were completely crystallized already at ca. 300 °C. PMID:26119755

  2. Separation of signals from amorphous and microcrystalline part of a tandem thin film silicon solar cell in Fourier transform photocurrent spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Holovský, Jakub; Poruba, Aleš; Bailat, J.; Vaněček, Milan

    München: WIP- Renewable Energies, 2007 - (Willeke, G.; Ossenbrink, H.; Helm, P.), s. 1851-1854 ISBN 3-936338-22-1. [European Photovoltaic Solar Energy Conference /22./. Milan (IT), 03.09.2007-07.09.2007] R&D Projects: GA MŽP(CZ) SN/3/172/05 Keywords : thin film silicon solar cell * Fourier transform photocurrent spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism

  3. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  4. Effect of Composition on Electrical and Optical Properties of Thin Films of Amorphous GaxSe100−x Nanorods

    Directory of Open Access Journals (Sweden)

    Abdallah El-Hamidy SM

    2010-01-01

    Full Text Available Abstract We report the electrical and optical studies of thin films of a-GaxSe100−x nanorods (x = 3, 6, 9 and 12. Thin films of a-GaxSe100−x nanorods have been synthesized thermal evaporation technique. DC electrical conductivity of deposited thin films of a-GaxSe100−x nanorods is measured as a function of temperature range from 298 to 383 K. An exponential increase in the dc conductivity is observed with the increase in temperature, suggesting thereby a semiconducting behavior. The estimated value of activation energy decreases on incorporation of dopant (Ga content in the Se system. The calculated value of pre-exponential factor (σ0 is of the order of 101 Ω−1 cm−1, which suggests that the conduction takes place in the band tails of localized states. It is suggested that the conduction is due to thermally assisted tunneling of the carriers in the localized states near the band edges. On the basis of the optical absorption measurements, an indirect optical band gap is observed in this system, and the value of optical band gap decreases on increasing Ga concentration.

  5. Improvements in the bias illumination stability of amorphous InGaZnO thin-film transistors by using thermal treatments

    International Nuclear Information System (INIS)

    The a-IGZO deposited by using the rf sputtering method features a conductive or an insulator characteristic based on amount of oxygen. We demonstrated that a post-treatment affects the resistance patterns of particular-sized InGaZnO(IGZO) thin films in a-IGZO thin-film transistors (TFTs). Post-annealing shifted the driving voltage of a-IGZO TFT to positive or negative values, depending on the annealing temperatures. Post-annealing may introduce oxygen vacancies or desorbed oxygen in the IGZO thin film. The changed driving voltage of IGZO TFTs coincides with the shift of the resistance pattern of IGZO. The fabricated a-IGZO TFTs exhibited a field effect mobility of 6.2 cm2/Vs, an excellent subthreshold gate swing of 0.32 V/decade, and a high Ion/off ratio of > 109. Under positive bias illumination stress (PBIS) and negative bias illumination stress (NBIS), after 3,600 seconds, the device threshold voltage shifted about 0.2 V and 0.3 V, respectively.

  6. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  7. Protein Thin Film Machines

    OpenAIRE

    Federici, Stefania; Oliviero, Giulio; Hamad-Schifferli, Kimberly; Bergese, Paolo

    2010-01-01

    We report the first example of microcantilever beams that are reversibly driven by protein thin film machines fuelled by cycling the salt concentration of the surrounding solution. We also show that upon the same salinity stimulus the drive can be completely reversed in its direction by introducing a surface coating ligand. Experimental results are throughout discussed within a general yet simple thermodynamic model.

  8. Growth and dielectric characterisation of large grain BiFeO{sub 3} thin films on amorphous SiO{sub 2} substrates

    Energy Technology Data Exchange (ETDEWEB)

    Vorobiev, A; Martirosyan, N; Gevorgian, S [Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Eriksson, S G, E-mail: andrei.vorobiev@chalmers.se [Department of Chemistry, Chalmers University of Technology, SE-41296 Gothenburg (Sweden)

    2010-02-15

    The BiFeO{sub 3} (BFO) thin films have been grown by pulsed laser deposition technique on fused silica substrates with pre-patterned inter-digital Au electrodes. The surface images reveal that with increasing growth temperature some needle-shaped grains develop rapidly from the electrode edges in the film plane and at 600 deg. C fill up the 6 {mu}m gap between the electrodes. The x-ray diffraction patterns reveal BFO (00l) peaks and additional peaks associated with Bi and Fe oxides. The dielectric response of the BFO films is measured as a function of external dc field up to 200 kV/cm at 10 MHz, and in the frequency range 0.01-45 GHz without dc field. The capacitance-voltage dependence reveals typical ferroelectric behaviour with a coercive field approximately 60 kV/cm. The permittivity (24) of non-poled BFO films is rather frequency independent, at least up to self resonance frequency (about 15 GHz) of the inter-digital test structure including BFO film. The loss tangent increases with frequency and is less than 0.02 at 1 GHz. It is found that the normal magnetic field 0.2 T decreases permittivity of non-poled BFO films approximately by 0.3%.

  9. Thermal conductivities of thin, sputtered optical films

    International Nuclear Information System (INIS)

    The normal component of thin-film thermal conductivity has been measured for the first time, to the best of our knowledge, for several advanced sputtered optical materials. Included are data for single layers of boron nitride, silicon aluminum nitride, silicon aluminum oxynitride, silicon carbide, and for dielectric-enhanced metal reflectors of the form Al(SiO2/Si3N4)n and Al(Al2O3/AlN)n. Sputtered films of more conventional materials such as SiO2, Al2O3, Ta2O5, Ti, and Si have also been measured. The data show that thin-film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film--substrate interface contribution is presented

  10. Thin film scintillators

    Science.gov (United States)

    McDonald, Warren; McKinney, George; Tzolov, Marian

    2015-03-01

    Scintillating materials convert energy flux (particles or electromagnetic waves) into light with spectral characteristic matching a subsequent light detector. Commercial scintillators such as yttrium aluminum garnet (YAG) and yttrium aluminum perovskite (YAP) are commonly used. These are inefficient at lower energies due to the conductive coating present on their top surface, which is needed to avoid charging. We hypothesize that nano-structured thin film scintillators will outperform the commercial scintillators at low electron energies. We have developed alternative thin film scintillators, zinc tungstate and zinc oxide, which show promise for higher sensitivity to lower energy electrons since they are inherently conductive. Zinc tungstate films exhibit photoluminescence quantum efficiency of 74%. Cathodoluminescence spectroscopy was applied in transmission and reflection geometries. The comparison between the thin films and the YAG and YAP commercial scintillators shows much higher light output from the zinc tungstate and zinc oxide at electron energies less than 5 keV. Our films were integrated in a backscattered electron detector. This detector delivers better images than an identical detector with commercial YAG scintillator at low electron energies. Dr. Nicholas Barbi from PulseTor LLC, Dr. Anura Goonewardene, NSF Grants: #0806660, #1058829, #0923047.

  11. Fabrication of Poly-Si Thin Film on Glass Substrate by Aluminum-induced Crystallization

    Institute of Scientific and Technical Information of China (English)

    XU Man; XIA Donglin; YANG Sheng; ZHAO Xiujian

    2006-01-01

    Amorphous silicon (a-Si) thin films were deposited on glass substrate by PECVD,and polycrystalline silicon (poly-Si) thin films were prepared by aluminum-induced crystallization (AIC). The effects of annealing temperature on the microstructure and morphology were investigated. The AIC poly-Si thin films were characterized by XRD, Raman and SEM. It is found that a-Si thin film has a amorphous structure after annealing at 400 ℃ for 20 min, a-Si films begin to crystallize after annealing at 450 ℃ for 20 min, and the crystallinity of a-Si thin films is enhanced obviously with the increment of annealing temperature.

  12. Electrical analysis of niobium oxide thin films

    International Nuclear Information System (INIS)

    In this work, a series of niobium oxide thin films was deposited by reactive magnetron sputtering. The total pressure of Ar/O2 was kept constant at 1 Pa, while the O2 partial pressure was varied up to 0.2 Pa. The depositions were performed in a grounded and non-intentionally heated substrate, resulting in as-deposited amorphous thin films. Raman spectroscopy confirmed the absence of crystallinity. Dielectric measurements as a function of frequency (40 Hz–110 MHz) and temperature (100 K–360 K) were performed. The dielectric constant for the film samples with thickness (d) lower than 650 nm decreases with the decrease of d. The same behaviour was observed for the conductivity. These results show a dependence of the dielectric permittivity with the thin film thickness. The electrical behaviour was also related with the oxygen partial pressure, whose increment promotes an increase of the Nb2O5 stoichiometry units. - Highlights: • Niobium oxide thin films were deposited by reactive magnetron sputtering. • XRD showed a phase change with the increase of the P(O2). • Raman showed that increasing P(O2), Nb2O5 amorphous increases. • Conductivity tends to decrease with the increase of P(O2). • Dielectric analysis indicates the inexistence of preferential grow direction

  13. Growth of amorphous Zn–Sn–O thin films by RF sputtering for buffer layers of CuInSe2 and SnS solar cells

    International Nuclear Information System (INIS)

    We propose using amorphous Zn–Sn–O (α-ZTO) deposited by RF sputtering as an alternative n-type buffer layer for Cu(In,Ga)Se2 and SnS solar cells. The order of the carrier density, n, is increased from the order of 1015 to 1017 cm−1 as the Sn/(Sn + Zn) atomic ratio increases from 0.29 to 0.40. On the other hand, the order of n decreased from 1017 to 1011 cm−1 as the oxygen partial pressure increased from 0 to 10%. Further, for the α-ZTO film with the Sn/(Sn + Zn) atomic ratio at 0.38 and the oxygen partial pressure at 0%, valence band discontinuities of α-ZTO/CuInSe2 and α-ZTO/SnS were determined using photoelectron yield spectroscopy measurements. The band discontinuities of each of these interfaces form a spike structure in the conduction band offset, which enables a high-performance solar cell to be obtained. - Highlights: • We propose using amorphous Zn–Sn–O as a n-type layer for Cu(In,Ga)Se2 and SnS solar cells. • The carrier density was controlled by total and/or oxygen partial pressure during sputtering. • Valence band discontinuities of Zn–Sn–O/CuInSe2 and Zn–Sn–O/SnS were determined. • The conduction band discontinuities of each of these interfaces form a spike structure

  14. Physics of thin films

    Energy Technology Data Exchange (ETDEWEB)

    Francombe, M.H. (Dept. of Physics, Univ. of Pittsburgh, Pittsburgh, PA (US)); Vossen, J.L. (John Vossen Associates, Technical and Scientific Consulting, Bridgewater, NJ (US))

    1992-01-01

    This book of Physics of Thin Films emphasizes two main technical themes. The first is essentially an extension of the topical thrust on Thin Films for Advance Electronic Devices, developed in Volume 15 of this series. The second deals primarily with the physical and mechanical behavior of films and the influence of these in relation to various applications. The first of the four articles in this volume, by Neelkanth G. Dhere, discusses high-transition-temperature (T{sub c}) superconducting films. Since their discovery in 1986, both world-wide research activity and published literature on high-T{sub c} oxide films have exploded at a phenomenal rate. In his treatment, the author presents an effective survey of the already vast literature on this subject, discusses the numerous techniques under development for the growth of these perovskite-related complex oxides, and describes their key properties and applications. In particular, factors affecting the epitaxial structure, critical current capability, and microwave conductivity in Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O based film compositions are evaluated in relation to their use at 77K. An overview of potential applications in a variety of microwave devices, wide-band optical detectors, SQUID-type high-sensitivity magnetometers, etc., is included.

  15. Physics of thin films

    International Nuclear Information System (INIS)

    This book of Physics of Thin Films emphasizes two main technical themes. The first is essentially an extension of the topical thrust on Thin Films for Advance Electronic Devices, developed in Volume 15 of this series. The second deals primarily with the physical and mechanical behavior of films and the influence of these in relation to various applications. The first of the four articles in this volume, by Neelkanth G. Dhere, discusses high-transition-temperature (Tc) superconducting films. Since their discovery in 1986, both world-wide research activity and published literature on high-Tc oxide films have exploded at a phenomenal rate. In his treatment, the author presents an effective survey of the already vast literature on this subject, discusses the numerous techniques under development for the growth of these perovskite-related complex oxides, and describes their key properties and applications. In particular, factors affecting the epitaxial structure, critical current capability, and microwave conductivity in Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O based film compositions are evaluated in relation to their use at 77K. An overview of potential applications in a variety of microwave devices, wide-band optical detectors, SQUID-type high-sensitivity magnetometers, etc., is included

  16. Half-Corbino short-channel amorphous In-Ga-Zn-O thin-film transistors with a-SiOx or a-SiOx/a-SiNx passivation layers

    Science.gov (United States)

    Zhao, Chumin; Fung, Tze-Ching; Kanicki, Jerzy

    2016-06-01

    We investigated the electrical properties and stability of short-channel half-Corbino amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). In the linear region, the fabricated half-Corbino a-IGZO TFT with a channel length of 4.5 μm achieves a geometrical factor (fg) of ∼2.7, a threshold voltage (VT) of ∼2.4 V, a field-effect mobility (μeff) of ∼15 cm2/Vs, a subthreshold swing (SS) of ∼320 mV/dec and an off-current (IOFF) amorphous silicon oxide (a-SiOx) single layer and a-SiOx/amorphous silicon nitride (a-SiNx) bilayer passivation (PV) structures. The device with bilayer PV shows a threshold voltage shift (ΔVT) of +2.07 and -0.5 V under positive (PBTS = +15 V) and negative BTS (NBTS = -15 V) at 70 °C for 10 ks, respectively. The origins of ΔVT during PBTS and NBTS for half-Corbino a-IGZO TFTs with single and bilayer PV structures were studied. To improve the device electrical stability, the bilayer PV structure should be used.

  17. Pyrolytic transformation from polydihydrosilane to hydrogenated amorphous silicon film

    Energy Technology Data Exchange (ETDEWEB)

    Masuda, Takashi, E-mail: mtakashi@jaist.ac.jp [Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-13 Asahidai, Nomi, Ishikawa, 923-1211 (Japan); Matsuki, Yasuo [Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-13 Asahidai, Nomi, Ishikawa, 923-1211 (Japan); Yokkaichi Research Center, JSR Corporation, 100 Kawajiri-cho, Yokkaichi, Mie, 510-8552 (Japan); Shimoda, Tatsuya [Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-13 Asahidai, Nomi, Ishikawa, 923-1211 (Japan); School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292 (Japan)

    2012-08-31

    The fabrication of thin film silicon devices based on solution processes rather than on conventional vacuum processes is of substantial interest since cost reductions may result. Using a solution process, we coated substrates with polydihydrosilane solution and studied the pyrolytic transformation of the material into hydrogenated amorphous silicon (a-Si:H). From thermal gravimetry and differential thermal analysis data a significant reduction in weight of the material and a construction of Si-Si bonds are concluded for the pyrolysis temperature T{sub p} = 270 to 360 Degree-Sign C. The appearance of amorphous silicon phonon bands in Raman spectra for films prepared at T{sub p} {>=} 330 Degree-Sign C suggests the construction of a three-dimensional amorphous silicon network. Films prepared at T{sub p} {>=} 360 Degree-Sign C exhibit a hydrogen content near 10 at.% and an optical gap near 1.6 eV similar to device-grade vacuum processed a-Si:H. However, the infrared microstructure factor, the spin density, and the photosensitivity require significant improvements. - Highlights: Black-Right-Pointing-Pointer We fabricate hydrogenated amorphous silicon (a-Si:H) films by a solution process. Black-Right-Pointing-Pointer The a-Si:H films are prepared by pyrolytic transformation in polysilane solution. Black-Right-Pointing-Pointer We investigate basic properties in relation to the pyrolysis temperature. Black-Right-Pointing-Pointer Raman spectra, hydrogen content, and optical gap are similar to device-grade a-Si:H. Black-Right-Pointing-Pointer Microstructure factor, spin density, and photoconductivity show poor quality.

  18. Simulation and Experimental Study of Photogeneration and Recombination in Amorphous-Like Silicon Thin Films Deposited by 27.12 MHz Plasma-Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Chia-Hsun Hsu

    2013-01-01

    Full Text Available Amorphous-like silicon (a-Si:H-like thin films are prepared by 27.12 MHz plasma-enhanced chemical vapor deposition technique. The films are applied to p-i-n single junction thin film solar cells with varying i-layer thickness to observe the effects on the short-circuit current density, as well as the open-circuit voltage, fill factor, and conversion efficiency. The most significant experimental result is that Jsc has two different behaviors with increasing the i-layer thickness, which can be related to carrier collection efficiency in the long wavelength region. Furthermore, technology computer-aided design simulation software is used to gain better insight into carrier generation and recombination of the solar cells, showing that for the i-layer thickness of 200 to 300 nm the generation dominates the carrier density and thus Jsc, whereas for the i-layer thickness of 300 to 400 nm the recombination becomes the leading factor. The simulation results of cell performances are in good agreement with experimental data, indicating that our simulation has great reliability. In addition, the a-Si:H-like solar cells have low light-induced degradation, which in turn can have a great potential to be used for stable and high-efficiency solar cells.

  19. Thin film superconductor magnetic bearings

    Science.gov (United States)

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  20. Nanostructured thin films and coatings mechanical properties

    CERN Document Server

    2010-01-01

    The first volume in "The Handbook of Nanostructured Thin Films and Coatings" set, this book concentrates on the mechanical properties, such as hardness, toughness, and adhesion, of thin films and coatings. It discusses processing, properties, and performance and provides a detailed analysis of theories and size effects. The book presents the fundamentals of hard and superhard nanocomposites and heterostructures, assesses fracture toughness and interfacial adhesion strength of thin films and hard nanocomposite coatings, and covers the processing and mechanical properties of hybrid sol-gel-derived nanocomposite coatings. It also uses nanomechanics to optimize coatings for cutting tools and explores various other coatings, such as diamond, metal-containing amorphous carbon nanostructured, and transition metal nitride-based nanolayered multilayer coatings.