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Sample records for amorphous silicon flat-panel

  1. Synchrotron applications of an amorphous silicon flat-panel detector

    International Nuclear Information System (INIS)

    Lee, J. H.; Can Aydiner, C.; Almer, J.; Bernier, J.; Chapman, K. W.; Chupas, P. J.; Haeffner, D.; Kump, K.; Lee, P. L.; Lienert, U.; Miceli, A.; Vera, G.; LANL; GE Healthcare

    2008-01-01

    A GE Revolution 41RT flat-panel detector (GE 41RT) from GE Healthcare (GE) has been in operation at the Advanced Photon Source for over two years. The detector has an active area of 41 cm x 41 cm with 200 (micro)m x 200 (micro)m pixel size. The nominal working photon energy is around 80 keV. The physical set-up and utility software of the detector system are discussed in this article. The linearity of the detector response was measured at 80.7 keV. The memory effect of the detector element, called lag, was also measured at different exposure times and gain settings. The modulation transfer function was measured in terms of the line-spread function using a 25 (micro)m x 1 cm tungsten slit. The background (dark) signal, the signal that the detector will carry without exposure to X-rays, was measured at three different gain settings and with exposure times of 1 ms to 15 s. The radial geometric flatness of the sensor panel was measured using the diffraction pattern from a CeO 2 powder standard. The large active area and fast data-capturing rate, i.e. 8 frames s -1 in radiography mode, 30 frames s -1 in fluoroscopy mode, make the GE 41RT one of a kind and very versatile in synchrotron diffraction. The loading behavior of a Cu/Nb multilayer material is used to demonstrate the use of the detector in a strain-stress experiment. Data from the measurement of various samples, amorphous SiO 2 in particular, are presented to show the detector effectiveness in pair distribution function measurements

  2. Megavoltage imaging with a large-area, flat-panel, amorphous silicon imager

    International Nuclear Information System (INIS)

    Antonuk, Larry E.; Yorkston, John; Huang Weidong; Sandler, Howard; Siewerdsen, Jeffrey H.; El-Mohri, Youcef

    1996-01-01

    Purpose: The creation of the first large-area, amorphous silicon megavoltage imager is reported. The imager is an engineering prototype built to serve as a stepping stone toward the creation of a future clinical prototype. The engineering prototype is described and various images demonstrating its properties are shown including the first reported patient image acquired with such an amorphous silicon imaging device. Specific limitations in the engineering prototype are reviewed and potential advantages of future, more optimized imagers of this type are presented. Methods and Materials: The imager is based on a two-dimensional, pixelated array containing amorphous silicon field-effect transistors and photodiode sensors which are deposited on a thin glass substrate. The array has a 512 x 560-pixel format and a pixel pitch of 450 μm giving an imaging area of ∼23 x 25 cm 2 . The array is used in conjunction with an overlying metal plate/phosphor screen converter as well as an electronic acquisition system. Images were acquired fluoroscopically using a megavoltage treatment machine. Results: Array and digitized film images of a variety of anthropomorphic phantoms and of a human subject are presented and compared. The information content of the array images generally appears to be at least as great as that of the digitized film images. Conclusion: Despite a variety of severe limitations in the engineering prototype, including many array defects, a relatively slow and noisy acquisition system, and the lack of a means to generate images in a radiographic manner, the prototype nevertheless generated clinically useful information. The general properties of these amorphous silicon arrays, along with the quality of the images provided by the engineering prototype, strongly suggest that such arrays could eventually form the basis of a new imaging technology for radiotherapy localization and verification. The development of a clinically useful prototype offering high

  3. Characterization of an amorphous silicon flat panel for controlling the positioning accuracy of sheet; Caracterizacion de un panel plano de silicio amorfo para control de la exactitud en el posicionamiento de laminas

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, J.; Gonzalez, V.; Gimeno, J.; Dolores, V. de los; Pastor, V.; Crispin, V.; Guardino, C.

    2011-07-01

    It has established a method for measuring the position of the blades in a multi leaf collimator (MLC) used to measure dose portal imaging device (EPID) of amorphous silicon, and verified its accuracy using radiochromic films and measures water with diode Cuba, techniques perfectly well validated in our institution. This dose profiles are studied for each sheet and determine their position at the point which has 50% of the dose in the open field.

  4. Radiation exposure in full-field digital mammography with a flat-panel X-ray detector based on amorphous silicon in comparison with conventional screen-film mammography

    International Nuclear Information System (INIS)

    Hermann, K.P.; Obenauer, S.; Grabbe, E.

    2000-01-01

    Comparison of radiation exposure between a digital amorphous silicon and a screen-film based mammography system. Evaluation of a possible potential of full-field digital mammography in order to decrease the radiation dose. Methods: The average glandular dose for phantom thicknesses from 30 to 60 mm was calculated from experimentally determined entrance surface air kerma for a digital and a conventional mammography system. The effect of reducing the detector dose and of changing the radiation quality on radiation exposure and on image quality were investigated. Results: By using the delivered settings of the automatic exposure control (AEC) devices, both mammographic systems needed nearly the same doses. Regulations and guidelines on radiation doses were complied. With the digital system, a reduction of radiation exposure of up to 40% by using a higher radiation quality and decreasing slightly the detector dose without loss of diagnostic image quality, might be possible. Conclusion: The potential of full-field digital mammography for radiation dose reduction, as shown in the present phantom study, needs however, a careful examination under clinical conditions. (orig.) [de

  5. Amorphous and Polycrystalline Photoconductors for Direct Conversion Flat Panel X-Ray Image Sensors

    Directory of Open Access Journals (Sweden)

    Karim S. Karim

    2011-05-01

    Full Text Available In the last ten to fifteen years there has been much research in using amorphous and polycrystalline semiconductors as x-ray photoconductors in various x-ray image sensor applications, most notably in flat panel x-ray imagers (FPXIs. We first outline the essential requirements for an ideal large area photoconductor for use in a FPXI, and discuss how some of the current amorphous and polycrystalline semiconductors fulfill these requirements. At present, only stabilized amorphous selenium (doped and alloyed a-Se has been commercialized, and FPXIs based on a-Se are particularly suitable for mammography, operating at the ideal limit of high detective quantum efficiency (DQE. Further, these FPXIs can also be used in real-time, and have already been used in such applications as tomosynthesis. We discuss some of the important attributes of amorphous and polycrystalline x-ray photoconductors such as their large area deposition ability, charge collection efficiency, x-ray sensitivity, DQE, modulation transfer function (MTF and the importance of the dark current. We show the importance of charge trapping in limiting not only the sensitivity but also the resolution of these detectors. Limitations on the maximum acceptable dark current and the corresponding charge collection efficiency jointly impose a practical constraint that many photoconductors fail to satisfy. We discuss the case of a-Se in which the dark current was brought down by three orders of magnitude by the use of special blocking layers to satisfy the dark current constraint. There are also a number of polycrystalline photoconductors, HgI2 and PbO being good examples, that show potential for commercialization in the same way that multilayer stabilized a-Se x-ray photoconductors were developed for commercial applications. We highlight the unique nature of avalanche multiplication in a-Se and how it has led to the development of the commercial HARP video-tube. An all solid state version of the

  6. MO-AB-BRA-07: Low Dose Imaging with Avalanche Amorphous Selenium Flat Panel Imager

    Energy Technology Data Exchange (ETDEWEB)

    Scheuermann, J; Howansky, A; Goldan, A; Tanioka, K; Zhao, W [Stony Brook University, Stony Brook, New York (United States); Leveille, S; Tousignant, O [2Analogic Canada, Saint-laurent, Quebec (Canada)

    2016-06-15

    Purpose: We present the first active matrix flat panel imager (AMFPI) capable of producing x-ray quantum noise limited images at low doses by overcoming the electronic noise through signal amplification by photoconductive avalanche gain (gav). The indirect detector fabricated uses an optical sensing layer of amorphous selenium (a-Se) known as High-Gain Avalanche Rushing Photoconductor (HARP). The detector design is called Scintillator HARP (SHARP)-AMFPI. This is the first image sensor to utilize solid-state HARP technology. Methods: The detector’s electronic readout is a 24 × 30 cm{sup 2} array of thin film transistors (TFT) with a pixel pitch of 85 µm. The HARP structure consists of a 15 µm layer of a-Se isolated from the high voltage (HV) and signal electrode by a 2 µm thick hole blocking layer and electron blocking layer, respectively, to reduce dark current. A 150 µm thick structured CsI scintillator with reflective backing and a fiber optic faceplate (FOP) was coupled to the semi-transparent HV bias electrode of the HARP structure. Images were acquired using a 30 kVp Mo/Mo spectrum typically used in mammography. Results: Optical sensitivity measurements demonstrate that gav = 76 ± 5 can be achieved over the entire active area of the detector. At a constant dose to the detector of 6.67 µGy, image quality increases with gav until the effective electronic noise is negligible. Quantum noise limited images can be obtained with doses as low as 0.18 µGy. Conclusion: We demonstrate the feasibility of utilizing avalanche gain to overcome electronic noise. The indirect detector fabricated is the first solid-state imaging sensor to use HARP, and the largest active area HARP sensor to date. Our future work is to improve charge transport within the HARP structure and utilize a transparent HV electrode.

  7. Embedded nonvolatile memory devices with various silicon nitride energy band gaps on glass used for flat panel display applications

    International Nuclear Information System (INIS)

    Son, Dang Ngoc; Van Duy, Nguyen; Jung, Sungwook; Yi, Junsin

    2010-01-01

    Nonvolatile memory (NVM) devices with a nitride–nitride–oxynitride stack structure on a rough poly-silicon (poly-Si) surface were fabricated using a low-temperature poly-Si (LTPS) thin film transistor technology on glass substrates for application of flat panel display (FPD). The plasma-assisted oxidation/nitridation method is used to form a uniform oxynitride with an ultrathin tunneling layer on a rough LTPS surface. The NVMs, using a Si-rich silicon nitride film as a charge-trapping layer, were proposed as one of the solutions for the improvement of device performance such as the program/erase speed, the memory window and the charge retention characteristics. To further improve the vertical scaling and charge retention characteristics of NVM devices, the high-κ high-density N-rich SiN x films are used as a blocking layer. The fabricated NVM devices have outstanding electrical properties, such as a low threshold voltage, a high ON/OFF current ratio, a low subthreshold swing, a low operating voltage of less than ±9 V and a large memory window of 3.7 V, which remained about 1.9 V over a period of 10 years. These characteristics are suitable for electrical switching and data storage with in FPD application

  8. Medical imaging applications of amorphous silicon

    International Nuclear Information System (INIS)

    Mireshghi, A.; Drewery, J.S.; Hong, W.S.; Jing, T.; Kaplan, S.N.; Lee, H.K.; Perez-Mendez, V.

    1994-07-01

    Two dimensional hydrogenated amorphous silicon (a-Si:H) pixel arrays are good candidates as flat-panel imagers for applications in medical imaging. Various performance characteristics of these imagers are reviewed and compared with currently used equipments. An important component in the a-Si:H imager is the scintillator screen. A new approach for fabrication of high resolution CsI(Tl) scintillator layers, appropriate for coupling to a-Si:H arrays, are presented. For nuclear medicine applications, a new a-Si:H based gamma camera is introduced and Monte Carlo simulation is used to evaluate its performance

  9. Feasibility of automatic marker detection with an a-Si flat-panel imager

    NARCIS (Netherlands)

    Nederveen, A. J.; Lagendijk, J. J.; Hofman, P.

    2001-01-01

    Here we study automatic detection of implanted gold markers relative to the field boundary in portal images for on-line position verification. Portal images containing 1-2 MU were taken with an amorphous silicon flat-panel imager. The images were obtained with lateral field at 18 MV. Both the

  10. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  11. TU-F-18C-02: Increasing Amorphous Selenium Thickness in Direct Conversion Flat-Panel Imagers for Contrast-Enhanced Dual-Energy Breast Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Scaduto, DA; Hu, Y-H; Zhao, W [Stony Brook University, Stony Brook, NY (United States)

    2014-06-15

    Purpose: Contrast-enhanced (CE) breast imaging using iodinated contrast agents requires imaging with x-ray spectra at energies greater than those used in mammography. Optimizing amorphous selenium (a-Se) flat panel imagers (FPI) for this higher energy range may increase lesion conspicuity. Methods: We compare imaging performance of a conventional FPI with 200 μm a-Se conversion layer to a prototype FPI with 300 μm a-Se layer. Both detectors are evaluated in a Siemens MAMMOMAT Inspiration prototype digital breast tomosynthesis (DBT) system using low-energy (W/Rh 28 kVp) and high-energy (W/Cu 49 kVp) x-ray spectra. Detectability of iodinated lesions in dual-energy images is evaluated using an iodine contrast phantom. Effects of beam obliquity are investigated in projection and reconstructed images using different reconstruction methods. The ideal observer signal-to-noise ratio is used as a figure-of-merit to predict the optimal a-Se thickness for CE lesion detectability without compromising conventional full-field digital mammography (FFDM) and DBT performance. Results: Increasing a-Se thickness from 200 μm to 300 μm preserves imaging performance at typical mammographic energies (e.g. W/Rh 28 kVp), and improves the detective quantum efficiency (DQE) for high energy (W/Cu 49 kVp) by 30%. While the more penetrating high-energy x-ray photons increase geometric blur due to beam obliquity in the FPI with thicker a-Se layer, the effect on lesion detectability in FBP reconstructions is negligible due to the reconstruction filters employed. Ideal observer SNR for CE objects shows improvements in in-plane detectability with increasing a-Se thicknesses, though small lesion detectability begins to degrade in oblique projections for a-Se thickness above 500 μm. Conclusion: Increasing a-Se thickness in direct conversion FPI from 200 μm to 300 μm improves lesion detectability in CE breast imaging with virtually no cost to conventional FFDM and DBT. This work was partially

  12. Hydrogenated amorphous silicon photonics

    Science.gov (United States)

    Narayanan, Karthik

    2011-12-01

    Silicon Photonics is quickly proving to be a suitable interconnect technology for meeting the future goals of on-chip bandwidth and low power requirements. However, it is not clear how silicon photonics will be integrated into CMOS chips, particularly microprocessors. The issue of integrating photonic circuits into electronic IC fabrication processes to achieve maximum flexibility and minimum complexity and cost is an important one. In order to minimize usage of chip real estate, it will be advantageous to integrate in three-dimensions. Hydrogenated amorphous silicon (a-Si:H) is emerging as a promising material for the 3-D integration of silicon photonics for on-chip optical interconnects. In addition, a-Si:H film can be deposited using CMOS compatible low temperature plasma-enhanced chemical vapor deposition (PECVD) process at any point in the fabrication process allowing maximum flexibility and minimal complexity. In this thesis, we demonstrate a-Si:H as a high performance alternate platform to crystalline silicon, enabling backend integration of optical interconnects in a hybrid photonic-electronic network-on-chip architecture. High quality passive devices are fabricated on a low-loss a-Si:H platform enabling wavelength division multiplexing schemes. We demonstrate a broadband all-optical modulation scheme based on free-carrier absorption effect, which can enable compact electro-optic modulators in a-Si:H. Furthermore, we comprehensively characterize the optical nonlinearities in a-Si:H and observe that a-Si:H exhibits enhanced nonlinearities as compared to crystalline silicon. Based on the enhanced nonlinearities, we demonstrate low-power four-wave mixing in a-Si:H waveguides enabling high speed all-optical devices in an a-Si:H platform. Finally, we demonstrate a novel data encoding scheme using thermal and all-optical tuning of silicon waveguides, increasing the spectral efficiency in an interconnect link.

  13. Amorphous Silicon: Flexible Backplane and Display Application

    Science.gov (United States)

    Sarma, Kalluri R.

    Advances in the science and technology of hydrogenated amorphous silicon (a-Si:H, also referred to as a-Si) and the associated devices including thin-film transistors (TFT) during the past three decades have had a profound impact on the development and commercialization of major applications such as thin-film solar cells, digital image scanners and X-ray imagers and active matrix liquid crystal displays (AMLCDs). Particularly, during approximately the past 15 years, a-Si TFT-based flat panel AMLCDs have been a huge commercial success. a-Si TFT-LCD has enabled the note book PCs, and is now rapidly replacing the venerable CRT in the desktop monitor and home TV applications. a-Si TFT-LCD is now the dominant technology in use for applications ranging from small displays such as in mobile phones to large displays such as in home TV, as well-specialized applications such as industrial and avionics displays.

  14. Flat-panel electronic displays: a triumph of physics, chemistry and engineering

    Science.gov (United States)

    Hilsum, Cyril

    2010-01-01

    This paper describes the history and science behind the development of modern flat-panel displays, and assesses future trends. Electronic displays are an important feature of modern life. For many years the cathode ray tube, an engineering marvel, was universal, but its shape was cumbersome and its operating voltage too high. The need for a flat-panel display, working at a low voltage, became imperative, and much research has been applied to this need. Any versatile flat-panel display will exploit an electro-optical effect, a transparent conductor and an addressing system to deliver data locally. The first need is to convert an electrical signal into a visible change. Two methods are available, the first giving emission of light, the second modulating ambient illumination. The most useful light-emitting media are semiconductors, historically exploiting III–V or II–VI compounds, but more recently organic or polymer semiconductors. Another possible effect uses gas plasma discharges. The modulating, or subtractive, effects that have been studied include liquid crystals, electrophoresis, electrowetting and electrochromism. A transparent conductor makes it possible to apply a voltage to an extended area while observing the results. The design is a compromise, since the free electrons that carry current also absorb light. The first materials used were metals, but some semiconductors, when heavily doped, give a better balance, with high transmission for a low resistance. Delivering data unambiguously to a million or so picture elements across the display area is no easy task. The preferred solution is an amorphous silicon thin-film transistor deposited at each cross-point in an X–Y matrix. Success in these endeavours has led to many applications for flat-panel displays, including television, flexible displays, electronic paper, electronic books and advertising signs. PMID:20123746

  15. Flat-panel electronic displays: a triumph of physics, chemistry and engineering.

    Science.gov (United States)

    Hilsum, Cyril

    2010-03-13

    This paper describes the history and science behind the development of modern flat-panel displays, and assesses future trends. Electronic displays are an important feature of modern life. For many years the cathode ray tube, an engineering marvel, was universal, but its shape was cumbersome and its operating voltage too high. The need for a flat-panel display, working at a low voltage, became imperative, and much research has been applied to this need. Any versatile flat-panel display will exploit an electro-optical effect, a transparent conductor and an addressing system to deliver data locally. The first need is to convert an electrical signal into a visible change. Two methods are available, the first giving emission of light, the second modulating ambient illumination. The most useful light-emitting media are semiconductors, historically exploiting III-V or II-VI compounds, but more recently organic or polymer semiconductors. Another possible effect uses gas plasma discharges. The modulating, or subtractive, effects that have been studied include liquid crystals, electrophoresis, electrowetting and electrochromism. A transparent conductor makes it possible to apply a voltage to an extended area while observing the results. The design is a compromise, since the free electrons that carry current also absorb light. The first materials used were metals, but some semiconductors, when heavily doped, give a better balance, with high transmission for a low resistance. Delivering data unambiguously to a million or so picture elements across the display area is no easy task. The preferred solution is an amorphous silicon thin-film transistor deposited at each cross-point in an X-Y matrix. Success in these endeavours has led to many applications for flat-panel displays, including television, flexible displays, electronic paper, electronic books and advertising signs.

  16. Laser illuminated flat panel display

    Energy Technology Data Exchange (ETDEWEB)

    Veligdan, J.T.

    1995-12-31

    A 10 inch laser illuminated flat panel Planar Optic Display (POD) screen has been constructed and tested. This POD screen technology is an entirely new concept in display technology. Although the initial display is flat and made of glass, this technology lends itself to applications where a plastic display might be wrapped around the viewer. The display screen is comprised of hundreds of planar optical waveguides where each glass waveguide represents a vertical line of resolution. A black cladding layer, having a lower index of refraction, is placed between each waveguide layer. Since the cladding makes the screen surface black, the contrast is high. The prototype display is 9 inches wide by 5 inches high and approximately I inch thick. A 3 milliwatt HeNe laser is used as the illumination source and a vector scanning technique is employed.

  17. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui

    2015-04-09

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  18. Studies of hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Bishop, S G; Carlos, W E

    1984-07-01

    This report discusses the results of probing the defect structure and bonding of hydrogenated amorphous silicon films using both nuclear magnetic resonance (NMR) and electron spin resonance (ESR). The doping efficiency of boron in a-Si:H was found to be less than 1%, with 90% of the boron in a threefold coordinated state. On the other hand, phosphorus NMR chemical shift measurements yielded a ration of threefold to fourfold P sites of roughly 4 to 1. Various resonance lines were observed in heavily boron- and phosphorus-doped films and a-SiC:H alloys. These lines were attributed to band tail states on twofold coordinated silicon. In a-SiC:H films, a strong resonance was attributed to dangling bonds on carbon atoms. ESR measurements on low-pressure chemical-vapor-deposited (LPCVD) a-Si:H were performed on samples. The defect density in the bulk of the films was 10/sup 17//cc with a factor of 3 increase at the surface of the sample. The ESR spectrum of LPCVD-prepared films was not affected by prolonged exposure to strong light. Microcrystalline silicon samples were also examined. The phosphorus-doped films showed a strong signal from the crystalline material and no resonance from the amorphous matrix. This shows that phosphorus is incorporated in the crystals and is active as a dopant. No signal was recorded from the boron-doped films.

  19. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  20. Amorphous silicon based radiation detectors

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D.; Fujieda, I.; Street, R.A.

    1991-07-01

    We describe the characteristics of thin(1 μm) and thick (>30μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs

  1. Towards upconversion for amorphous silicon solar cells

    NARCIS (Netherlands)

    de Wild, J.; Meijerink, A.; Rath, J.K.; van Sark, W.G.J.H.M.; Schropp, R.E.I.

    2010-01-01

    Upconversion of subbandgap light of thin film single junction amorphous silicon solar cells may enhance their performance in the near infrared (NIR). In this paper we report on the application of the NIR–vis upconverter β-NaYF4:Yb3+(18%) Er3+(2%) at the back of an amorphous silicon solar cell in

  2. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    TECS

    flexible triple junction, amorphous silicon solar cells. At the Malaysia Energy Centre (MEC), we fabricated triple junction amorphous silicon solar cells (up to 12⋅7% efficiency (Wang et al 2002)) and laser-interconnected modules on steel, glass and polyimide substrates. A major issue encountered is the adhesion of thin film ...

  3. Performance Characteristic of a CsI(Tl) Flat Panel Detector Radiography System

    International Nuclear Information System (INIS)

    Jeong, Hoi Woun; Min, Jung Hwan; Kim, Jung Min; Park, Min Seok; Lee, Gaung Young

    2012-01-01

    The purpose of this work was to evaluate an amorphous silicon cesium iodide based indirect flat-panel detector (FPD) in terms of their modulation transfer function (MTF), Wiener spectrum (WS, or noise power spectrum, NPS), and detective quantum efficiency (DQE). Measurements were made on flat-panel detector using the International Electrotechnical Commission (IEC) defined RQA3, RQA5, RQA7, and RQA9 radiographic technique. The MTFs of the systems were measured using an edge method. The WS(NPS) of the systems were determined for a range of exposure levels by two-dimensional (2D). Fourier analysis of uniformly exposed radiographs. The DQEs were assessed from the measured MTF, WS(NPS), exposure, and estimated ideal signal-to-noise ratios. Characteristic curve in the RQA3 showed difference in the characteristic curve from RQA5, RQA7, RQA9. MTFs were not differences according to x-ray beam quality. WS(NPS) was reduced with increasing dose, and RQA 3, RQA5, RQA7, RQA9 as the order is reduced. DQE represented the best in the 1mR, RQA 3, RQA5, RQA7, RQA9 decrease in the order. The physical imaging characteristics of FPD may also differ from input beam quality. This study gives an initial motivation that the physical imaging characteristics of FPD is an important issue for the right use of digital radiography system.

  4. Performance Characteristic of a CsI(Tl) Flat Panel Detector Radiography System

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Hoi Woun [Dept. of Radiological Science, Baekseok Culture University, Seoul (Korea, Republic of); Min, Jung Hwan [Dept. of Radiological Technology, Shingu University, Seongnam (Korea, Republic of); Kim, Jung Min [Dept. of Radiological Science, Korea University, Health Science College, Seoul (Korea, Republic of); Park, Min Seok [Korea Institue of Radiological and Medical Sicences, Research Institute of Radiologycal and Medical Sciences, Seoul (Korea, Republic of); Lee, Gaung Young [National Institute of Food and Drug Safety Evaluation, Seoul (Korea, Republic of)

    2012-06-15

    The purpose of this work was to evaluate an amorphous silicon cesium iodide based indirect flat-panel detector (FPD) in terms of their modulation transfer function (MTF), Wiener spectrum (WS, or noise power spectrum, NPS), and detective quantum efficiency (DQE). Measurements were made on flat-panel detector using the International Electrotechnical Commission (IEC) defined RQA3, RQA5, RQA7, and RQA9 radiographic technique. The MTFs of the systems were measured using an edge method. The WS(NPS) of the systems were determined for a range of exposure levels by two-dimensional (2D). Fourier analysis of uniformly exposed radiographs. The DQEs were assessed from the measured MTF, WS(NPS), exposure, and estimated ideal signal-to-noise ratios. Characteristic curve in the RQA3 showed difference in the characteristic curve from RQA5, RQA7, RQA9. MTFs were not differences according to x-ray beam quality. WS(NPS) was reduced with increasing dose, and RQA 3, RQA5, RQA7, RQA9 as the order is reduced. DQE represented the best in the 1mR, RQA 3, RQA5, RQA7, RQA9 decrease in the order. The physical imaging characteristics of FPD may also differ from input beam quality. This study gives an initial motivation that the physical imaging characteristics of FPD is an important issue for the right use of digital radiography system.

  5. Establishment of action levels for quality control of IMRT flat panel: experience with the algorithm iGRiMLO; Establecimiento de niveles de accion para el control de calidad de IMRT con panel plano: experiencia con el algoritmo iGRiMLO

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez, V.; Dolores, VV. de los; Pastor, V.; Martinez, J.; Gimeno, J.; Guardino, C.; Crispin, V.

    2011-07-01

    Algorithm has been used at our institution iGRiMLO scheduled for individual verification of treatment plans for intensity modulated radiotherapy (IMRT) step and shoot through portal dosimetry pretreatment of non-transmission, triggering the plan directly to a portal imaging device (EPID) of an amorphous silicon flat panel.

  6. An asynchronous, pipelined, electronic acquisition system for Active Matrix Flat-Panel Imagers (AMFPIs)

    CERN Document Server

    Huang, W; Berry, J; Maolinbay, M; Martelli, C; Mody, P; Nassif, S; Yeakey, M

    1999-01-01

    The development of a full-custom electronic acquisition system designed for readout of large-area active matrix flat-panel imaging arrays is reported. The arrays, which comprise two-dimensional matrices of pixels utilizing amorphous silicon thin-film transistors, are themselves under development for a wide variety of X-ray imaging applications. The acquisition system was specifically designed to facilitate detailed, quantitative investigations of the properties of these novel imaging arrays and contains significant enhancements compared to a previously developed acquisition system. These enhancements include pipelined preamplifier circuits to allow faster readout speed, expanded addressing capabilities allowing a maximum of 4096 array data lines, and on-board summing of image frames. The values of many acquisition system parameters, including timings and voltages, may be specified and downloaded from a host computer. Once acquisition is enabled, the system operates asynchronously of its host computer. The sys...

  7. Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices

    OpenAIRE

    Schriver, Maria Christine

    2012-01-01

    A novel solar cell architecture made completely from the earth abundant elements silicon and carbon has been developed. Hydrogenated amorphous silicon (aSi:H), rather than crystalline silicon, is used as the active material due to its high absorption through a direct band gap of 1.7eV, well matched to the solar spectrum to ensure the possibility of improved cells in this architecture with higher efficiencies. The cells employ a Schottky barrier design wherein the amorphous silicon absorber la...

  8. Ab initio simulation of amorphous silicon

    International Nuclear Information System (INIS)

    Cooper, N.C.; McKenzie, D.R.; Goringe, C.M.

    1999-01-01

    Full text: A first-principles Car-Parrinello molecular dynamics simulation of amorphous silicon is presented. Density Functional Theory is used to describe the forces between the atoms in a 64 atom supercell which is periodically repeated throughout space in order to generate an infinite network of atoms (a good approximation to a real solid). A quench from the liquid phase is used to achieve a quenched amorphous structure, which is subjected to an annealing cycle to improve its stability. The final, annealed network is in better agreement with experiment than any previous simulation of amorphous silicon. Significantly, the predicted average first-coordination numbers of 3.56 and 3.84 for the quenched and annealed structures from this simulation agree very closely with the experimental values of 3.55 and 3.90 respectively, whereas all previous simulations yielded first coordination numbers greater than 4. This improved agreement in coordination numbers is important because it supports the experimental finding that dangling bonds (which are associated with under-coordinated atoms) are more prevalent than floating bonds (the strained, longer bond of a five coordinate atom) in pure amorphous silicon. Finally, the effect of adding hydrogen to amorphous silicon was investigated by specifically placing hydrogen atoms at the likely defect sites. After a structural relaxation to optimise the positions of these hydrogen atoms, the localised electronic states associated with these defects are absent. Thus hydrogen is responsible for removing these defect states (which are able to trap carriers) from the edge of the band gap of the amorphous silicon. These results confirm the widely held ideas about the effect of hydrogen in producing remarkable improvements in the electronic properties of amorphous silicon

  9. Amorphous silicon detectors in positron emission tomography

    International Nuclear Information System (INIS)

    Conti, M.; Perez-Mendez, V.

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters ε 2 τ's are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs

  10. Amorphous silicon detectors in positron emission tomography

    Energy Technology Data Exchange (ETDEWEB)

    Conti, M. (Istituto Nazionale di Fisica Nucleare, Pisa (Italy) Lawrence Berkeley Lab., CA (USA)); Perez-Mendez, V. (Lawrence Berkeley Lab., CA (USA))

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters {epsilon}{sup 2}{tau}'s are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs.

  11. Design scenarios for flat panel photobioreactors

    International Nuclear Information System (INIS)

    Slegers, P.M.; Wijffels, R.H.; Straten, G. van; Boxtel, A.J.B. van

    2011-01-01

    Evaluation of the potential of algae production for biofuel and other products at various locations throughout the world requires assessment of algae productivity under varying light conditions and different reactor layouts. A model was developed to predict algae biomass production in flat panel photobioreactors using the interaction between light and algae growth for the algae species Phaeodactylum tricornutum and Thalassiosira pseudonana. The effect of location, variable sunlight and reactor layout on biomass production in single standing and parallel positioned flat panels was considered. Three latitudes were studied representing the Netherlands, France and Algeria. In single standing reactors the highest yearly biomass production is achieved in Algeria. During the year biomass production fluctuates the most in the Netherlands, while it is almost constant in Algeria. Several combinations of path lengths and biomass concentrations can result in the same optimal biomass production. The productivity in parallel place flat panels is strongly influenced by shading and diffuse light penetration between the panels. Panel orientation has a large effect on productivity and at higher latitudes the difference between north-south and east-west orientation may go up to 50%.

  12. Data pre-processing for quantification in tomography and radiography with a digital flat panel detector

    Science.gov (United States)

    Rinkel, Jean; Gerfault, Laurent; Estève, François; Dinten, Jean-Marc

    2006-03-01

    In order to obtain accurate quantitative results, flat panel detectors require specific calibration and correction of acquisitions. Main artefacts are due to bad pixels, variations of photodiodes characteristics and inhomogeneity of X-rays sensitivity of the scintillator layer. Other limitations for quantification are the non-linearity of the detector due to charge trapping in the transistors and the scattering generated inside the detector, called detector scattering. Based on physical models of artefacts generation, this paper presents an unified framework for the calibration and correction of these artefacts. The following specific algorithms have been developed to correct them. A new method for correction of deviation to linearity is based on the comparison between experimental and simulated data. A method of detector scattering correction is performed in two steps: off-line characterization of detector scattering by considering its spatial distribution through a convolution model and on-line correction based on a deconvolution approach. Radiographic results on an anthropomorphic thorax phantom imaged with a flat panel detector, that convert X-rays into visible light using scintillator coupled to an amorphous silicon transistor frame for photons to electrons conversion, demonstrate that experimental X-rays attenuation images are significantly improved qualitatively and quantitatively by applying non-linearity correction and detector scattering correction. Results obtained on tomographic reconstructions from pre-processed acquisitions of the phantom are in very good agreement with expected attenuation coefficients values obtained with a multi-slice CT scanner. Thus, this paper demonstrates the efficiency of the proposed pre-processings to perform accurate quantification on radiographies and tomographies.

  13. Radiation exposure in full-field digital mammography with a selenium flat-panel detector; Strahlenexposition bei der digitalen Vollfeldmammographie mit einem Selen-Flachdetektor

    Energy Technology Data Exchange (ETDEWEB)

    Gosch, D.; Jendrass, S.; Scholz, M.; Kahn, T. [Klinik und Poliklinik fuer Diagnostische und Interventionelle Radiologie, Universitaetsklinikum Leipzig AoeR (Germany)

    2006-07-15

    Purpose: calculation of the average glandular dose for mammography on a full-field digital mammography system using a selenium flat-panel detector. Materials and methods: mammographic examinations were carried out using the selenia digital mammographic system from Lorad/Hologic. 1992 mammographies of 500 patients in cranio-caudal and medio-lateral projections were evaluated. Based on the recorded exposure conditions (tube voltage, tube loading, filtration, compressed breast thickness), the entrance surface air kerma was calculated by multiplying the tube loading by the measured tube output and was corrected according to the inverse square law. The average glandular dose was determined for each exposure by multiplying the entrance surface air kerma value by the relevant conversion factor for a breast composition of 50% adipose tissue and 50% glandular tissue by weight. Results: the mean values for patient age and compressed breast thickness were 61 years and 58 mm, respectively. The average glandular dose was 1.57 mGy for a single view (1.46 mGy for cranio-caudal view images and 1.68 mGy for medio-lateral view images). Conclusion: full-field digital mammography with a selenium flat-panel detector requires a dose similar to that of units with a flat-panel detector based on amorphous silicon and a dose approximately 20% lower than that of conventional screen/film mammography. (orig.)

  14. Dynamics of hydrogen in hydrogenated amorphous silicon

    Indian Academy of Sciences (India)

    weak (strained) Si–Si bond thereby apparently enhancing the hydrogen diffusion and increasing the light-induced dangling bonds. Keywords. Hydrogenated amorphous silicon; metastable electronic states; hydrogen diffusion. PACS Nos 61.43.Dq; 66.30.-h; 71.23.Cq. 1. Introduction. Hydrogen passivation of dangling bonds ...

  15. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    TECS

    Abstract. A major issue encountered during fabrication of triple junction a-Si solar cells on polyimide sub- strates is the adhesion of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous silicon solar cells made on different polyimide substrates (Kapton VN, Upilex-S and ...

  16. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    A major issue encountered during fabrication of triple junction -Si solar cells on polyimide substrates is the adhesion of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous silicon solar cells made on different polyimide substrates (Kapton VN, Upilex-S and Gouldflex), and the ...

  17. Dynamics of hydrogen in hydrogenated amorphous silicon

    Indian Academy of Sciences (India)

    c0, c being the instantaneous concentration at a local point and c0, the average concentration of hydrogen in the hydrogenated amorphous silicon. If the system is both incompressible and isotropic, the change in Helmholtz free energy due to fluctuations in the local concentration of hydrogen is given as. 122. Pramana – J.

  18. Ultrasonic scanner for radial and flat panels

    Science.gov (United States)

    Spencer, R. L.; Hill, E. K. (Inventor)

    1973-01-01

    An ultrasonic scanning mechanism is described that scans panels of honeycomb construction or with welded seams. It incorporates a device which by simple adjustment is adapted to scan either a flat panel or a radial panel. The supporting structure takes the form of a pair of spaced rails. An immersion tank is positioned between the rails and below their level. A work holder is mounted in the tank and is adapted to hold the flat or radial panel. A traveling bridge is movable along the rails and a carriage is mounted on the bridge.

  19. Ion bombardment and disorder in amorphous silicon

    International Nuclear Information System (INIS)

    Sidhu, L.S.; Gaspari, F.; Zukotynski, S.

    1997-01-01

    The effect of ion bombardment during growth on the structural and optical properties of amorphous silicon are presented. Two series of films were deposited under electrically grounded and positively biased substrate conditions. The biased samples displayed lower growth rates and increased hydrogen content relative to grounded counterparts. The film structure was examined using Raman spectroscopy. The transverse optic like phonon band position was used as a parameter to characterize network order. Biased samples displayed an increased order of the amorphous network relative to grounded samples. Furthermore, biased samples exhibited a larger optical gap. These results are correlated and attributed to reduced ion bombardment effects

  20. Amorphization of silicon by femtosecond laser pulses

    International Nuclear Information System (INIS)

    Jia, Jimmy; Li Ming; Thompson, Carl V.

    2004-01-01

    We have used femtosecond laser pulses to drill submicron holes in single crystal silicon films in silicon-on-insulator structures. Cross-sectional transmission electron microscopy and energy dispersive x-ray analysis of material adjacent to the ablated holes indicates the formation of a layer of amorphous Si. This demonstrates that even when material is ablated using femtosecond pulses near the single pulse ablation threshold, sufficient heating of the surrounding material occurs to create a molten zone which solidifies so rapidly that crystallization is bypassed

  1. Transparent Solar Concentrator for Flat Panel Display

    Science.gov (United States)

    Yeh, Chia-Hung; Chang, Fuh-Yu; Young, Hong-Tsu; Hsieh, Tsung-Yen; Chang, Chia-Hsiung

    2012-06-01

    A new concept of the transparent solar concentrator for flat panel display is experimentally demonstrated without adversely affecting the visual effects. The solar concentrator is based on a solar light-guide plate with micro prisms, not only increasing the absorption area of solar energy but also enhancing the conversion efficiency. The incident light is guided by the designed solar light-guide plate according to the total internal reflection (TIR), and converted into electrical power by photovoltaic solar cells. The designed transparent solar concentrator was made and measured with high transparency, namely 94.8%. The developed solar energy system for display can store energy and supply the bias voltage to light on two light-emitting diodes (LEDs) successfully.

  2. Fluctuation microscopy analysis of amorphous silicon models

    International Nuclear Information System (INIS)

    Gibson, J.M.; Treacy, M.M.J.

    2017-01-01

    Highlights: • Studied competing computer models for amorphous silicon and simulated fluctuation microscopy data. • Show that only paracrystalline/random network composite can fit published data. • Specifically show that pure random network or random network with void models do not fit available data. • Identify a new means to measure volume fraction of ordered material. • Identify unreported limitations of the Debye model for simulating fluctuation microscopy data. - Abstract: Using computer-generated models we discuss the use of fluctuation electron microscopy (FEM) to identify the structure of amorphous silicon. We show that a combination of variable resolution FEM to measure the correlation length, with correlograph analysis to obtain the structural motif, can pin down structural correlations. We introduce the method of correlograph variance as a promising means of independently measuring the volume fraction of a paracrystalline composite. From comparisons with published data, we affirm that only a composite material of paracrystalline and continuous random network that is substantially paracrystalline could explain the existing experimental data, and point the way to more precise measurements on amorphous semiconductors. The results are of general interest for other classes of disordered materials.

  3. Primary photon fluence extraction from portal images acquired with an amorphous silicon flat panel detector: experimental determination of a scatter filter.

    Science.gov (United States)

    D'Andrea, M; Laccarino, G; Carpino, S; Strigari, L; Benassi, M

    2007-03-01

    When dose delivery to the patient is evaluated by extracting the primary photon fluence impinging on a portal imaging device, scattered radiation from the patient acts as noise. Our aim in the present study is to establish and test a procedure to filter out scatter radiations from portal images by experimental determination of a scatter filtering function. We performed a dose calibration of the Varian (Varian Medical Systems, Palo Alto, CA) aS500 electronic portal imaging device in routine use in our institution. We then analyzed the collected data and extracted the scatter filtering function by applying a simple scatter model with the aid of home-made software. To check the reliability of our calculations we compared central axis dose values in a PMMA phantom computed using the extracted primary fluence with those obtained from experimental TMR(0) tabulated values obtaining a agreement within about 3%. We finally performed a check of dose delivery repeatability by calculating the dose delivered to the EPID during portal image acquisition for patient positioning. Delivered dose per MU fluctuations were within 5% over a set of images acquired during routine use with no prior application of any procedure aimed at optimizing dosimetric repeatability.

  4. Three-Terminal Amorphous Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Cheng-Hung Tai

    2011-01-01

    Full Text Available Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell was 9.0%. Furthermore, an efficiency of 11.7% was achieved by thickness optimization of the three-terminal solar cell.

  5. Development of large area, high efficiency amorphous silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, K.S.; Kim, S.; Kim, D.W. [Yu Kong Taedok Institute of Technology (Korea, Republic of)

    1996-02-01

    The objective of the research is to develop the mass-production technologies of high efficiency amorphous silicon solar cells in order to reduce the costs of solar cells and dissemination of solar cells. Amorphous silicon solar cell is the most promising option of thin film solar cells which are relatively easy to reduce the costs. The final goal of the research is to develop amorphous silicon solar cells having the efficiency of 10%, the ratio of light-induced degradation 15% in the area of 1200 cm{sup 2} and test the cells in the form of 2 Kw grid-connected photovoltaic system. (author) 35 refs., 8 tabs., 67 figs.

  6. Crystallization of HWCVD amorphous silicon thin films at elevated temperatures

    CSIR Research Space (South Africa)

    Muller, TFG

    2006-01-01

    Full Text Available Hot-wire chemical vapour deposition (HWCVD) has been used to prepare both hydrogenated amorphous silicon (a-Si:H) and nano/ microcrystalline thin layers as intrinsic material at different deposition conditions, in order to establish optimum...

  7. Amorphous silicon films doped with BF3 and PF5

    International Nuclear Information System (INIS)

    Ortiz, A.; Muhl, S.; Sanchez, A.; Monroy, R.; Pickin, W.

    1984-01-01

    By using gaseous discharge process, thin films of hydrogenated amorphous silicon (a-Si:H) were produced. This process consists of Silane (SiH 4 ) decomposition at low pressure, in a chamber. (A.C.A.S.) [pt

  8. Color quality management in advanced flat panel display engines

    Science.gov (United States)

    Lebowsky, Fritz; Neugebauer, Charles F.; Marnatti, David M.

    2003-01-01

    During recent years color reproduction systems for consumer needs have experienced various difficulties. In particular, flat panels and printers could not reach a satisfactory color match. The RGB image stored on an Internet server of a retailer did not show the desired colors on a consumer display device or printer device. STMicroelectronics addresses this important color reproduction issue inside their advanced display engines using novel algorithms targeted for low cost consumer flat panels. Using a new and genuine RGB color space transformation, which combines a gamma correction Look-Up-Table, tetrahedrization, and linear interpolation, we satisfy market demands.

  9. Self-consistent modeling of amorphous silicon devices

    International Nuclear Information System (INIS)

    Hack, M.

    1987-01-01

    The authors developed a computer model to describe the steady-state behaviour of a range of amorphous silicon devices. It is based on the complete set of transport equations and takes into account the important role played by the continuous distribution of localized states in the mobility gap of amorphous silicon. Using one set of parameters they have been able to self-consistently simulate the current-voltage characteristics of p-i-n (or n-i-p) solar cells under illumination, the dark behaviour of field-effect transistors, p-i-n diodes and n-i-n diodes in both the ohmic and space charge limited regimes. This model also describes the steady-state photoconductivity of amorphous silicon, in particular, its dependence on temperature, doping and illumination intensity

  10. Plasma deposition of amorphous silicon-based materials

    CERN Document Server

    Bruno, Giovanni; Madan, Arun

    1995-01-01

    Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Key Features * Focuses on the plasma chemistry of amorphous silicon-based materials * Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced * Features an international group of contributors * Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices.

  11. GHz-rate optical parametric amplifier in hydrogenated amorphous silicon

    International Nuclear Information System (INIS)

    Wang, Ke-Yao; Foster, Amy C

    2015-01-01

    We demonstrate optical parametric amplification operating at GHz-rates at telecommunications wavelengths using a hydrogenated amorphous silicon waveguide through the nonlinear optical process of four-wave mixing. We investigate how the parametric amplification scales with repetition rate. The ability to achieve amplification at GHz-repetition rates shows hydrogenated amorphous silicon’s potential for telecommunication applications and a GHz-rate optical parametric oscillator. (paper)

  12. Transmissive metallic contact for amorphous silicon solar cells

    Science.gov (United States)

    Madan, A.

    1984-11-29

    A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

  13. Digital radiography with large-area flat-panel detectors

    International Nuclear Information System (INIS)

    Kotter, E.; Langer, M.

    2002-01-01

    Large-area flat-panel detectors with active readout mechanisms have been on the market for the past 2 years. This article describes different detector technologies. An important distinction is made between detectors with direct and those with indirect conversion of X-rays into electrical charges. Detectors with indirect conversion are built with unstructured or structured scintillators, the latter resulting in less lateral diffusion of emitted light. Some important qualities of flat-panel detectors are discussed. The first phantom and clinical studies published report an image quality at least comparable to that of screen-film systems and a potential for dose reduction. The available studies are summarised in this article. (orig.)

  14. Comprehensive modeling of ion-implant amorphization in silicon

    International Nuclear Information System (INIS)

    Mok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Srinivasan, M.P.; Benistant, F.

    2005-01-01

    A physically based model has been developed to simulate the ion-implant induced damage accumulation up to amorphization in silicon. Based on damage structures known as amorphous pockets (AP), which are three-dimensional, irregularly shaped agglomerates of interstitials (I) and vacancies (V) surrounded by crystalline silicon, the model is able to reproduce a wide range of experimental observations of damage accumulation and amorphization with interdependent implantation parameters. Instead of recrystallizing the I's and V's instantaneously, the recrystallization rate of an AP containing nI and mV is a function of its effective size, defined as min(n, m), irrespective of its internal spatial configuration. The parameters used in the model were calibrated using the experimental silicon amorphous-crystalline transition temperature as a function of dose rate for C, Si, and Ge. The model is able to show the superlinear damage build-up with dose, the extent of amorphous layer and the superadditivity effect of polyatomic ions

  15. Detection of charged particles in amorphous silicon layers

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Morel, J.; Kaplan, S.N.; Street, R.A.

    1986-02-01

    The successful development of radiation detectors made from amorphous silicon could offer the possibility for relatively easy construction of large area position-sensitive detectors. We have conducted a series of measurements with prototype detectors, on signals derived from alpha particles. The measurement results are compared with simple model calculations, and projections are made of potential applications in high-energy and nuclear physics

  16. Structure of hydrogenated amorphous silicon from ab initio molecular dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Buda, F. (Department of Physics, The Ohio State University, 174 West 18th Avenue, Columbus, Ohio (USA)); Chiarotti, G.L. (International School for Advanced Studies, Strada Costiera 11, I-34014 Trieste (Italy) Laboratorio Tecnologie Avanzate Superfici e Catalisi del Consorzio Interuniversitario Nazionale di Fisica della Materia, Padriciano 99, I-34012 Trieste (Italy)); Car, R. (International School for Advanced Studies, Strada Costiera 11, I-34014 Trieste (Italy) Institut Romard de Recherche Numerique en Physique des Materiaux, CH-1015 Lausanne, Switzerland Department of Condensed Matter Physics, University of Geneva, CH-1211 Geneva (Switzerland)); Parrinello, M. (IBM Research Division, Zurich Research Laboratory, CH-8803 Rueschlikon (Switzerland))

    1991-09-15

    We have generated a model of hydrogenated amorphous silicon by first-principles molecular dynamics. Our results are in good agreement with the available experimental data and provide new insight into the microscopic structure of this material. The calculation lends support to models in which monohydride complexes are prevalent, and indicates a strong tendency of hydrogen to form small clusters.

  17. Theory of structure and properties of hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Chiarotti, G.L.; Car, R. (International School of Advanced Studies, Trieste (Italy) Interuniversitario Nazionale di Fisica della Materia (INFM), Trieste (Italy). Lab. Tecnologie Avanzate Superfici e Catalisi); Buda, F. (International School of Advanced Studies, Trieste (Italy) Ohio State Univ., Columbus, OH (USA). Dept. of Physics); Parrinello, M. (International School of Advanced Studies, Trieste

    1990-01-01

    We have generated a computer model of hydrogenated amorphous silicon by first-principles molecular dynamics. Our results are in good agreement with the available experimental data, and provide new insight into the microscopic structure of this material. This should lead to a better understanding of the hydrogenation process. 13 refs., 2 figs.

  18. A new tevchnique for production of amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Andrade, A.M. de; Pereyra, I.; Sanematsu, M.S.; Corgnier, S.L.L.; Fonseca, F.J.

    1984-01-01

    It is presented a new technique for the production of amorphous silicon solar cells based on the development of thin films of a-Si in a reactor in which the decomposition of the sylane, induced by capacitively coupled RF, and the film deposition occur in separate chambers. (M.W.O.) [pt

  19. Diffractive flat panel solar concentrators of a novel design.

    Science.gov (United States)

    de Jong, Ties M; de Boer, Dick K G; Bastiaansen, Cees W M

    2016-07-11

    A novel design for a flat panel solar concentrator is presented which is based on a light guide with a grating applied on top that diffracts light into total internal reflection. By combining geometrical and diffractive optics the geometrical concentration ratio is optimized according to the principles of nonimaging optics, while the thickness of the device is minimized due to the use of total internal reflection.

  20. A method and apparatus for forming a double-curved panel from a flat panel

    NARCIS (Netherlands)

    Rietbergen, D.; Vollers, K.J.

    2008-01-01

    A method for forming a double-curved panel from a flat panel, which comprises processing a plastically deformable flat panel or rendering the flat panel plastically deformable to enable it to mould itself to a predetermined shape, wherein the shape is obtained by a primary supporting construction

  1. Indirect flat-panel detector with avalanche gain: Fundamental feasibility investigation for SHARP-AMFPI (scintillator HARP active matrix flat panel imager)

    International Nuclear Information System (INIS)

    Zhao Wei; Li Dan; Reznik, Alla; Lui, B.J.M.; Hunt, D.C.; Rowlands, J.A.; Ohkawa, Yuji; Tanioka, Kenkichi

    2005-01-01

    An indirect flat-panel imager (FPI) with avalanche gain is being investigated for low-dose x-ray imaging. It is made by optically coupling a structured x-ray scintillator CsI(Tl) to an amorphous selenium (a-Se) avalanche photoconductor called HARP (high-gain avalanche rushing photoconductor). The final electronic image is read out using an active matrix array of thin film transistors (TFT). We call the proposed detector SHARP-AMFPI (scintillator HARP active matrix flat panel imager). The advantage of the SHARP-AMFPI is its programmable gain, which can be turned on during low dose fluoroscopy to overcome electronic noise, and turned off during high dose radiography to avoid pixel saturation. The purpose of this paper is to investigate the important design considerations for SHARP-AMFPI such as avalanche gain, which depends on both the thickness d Se and the applied electric field E Se of the HARP layer. To determine the optimal design parameter and operational conditions for HARP, we measured the E Se dependence of both avalanche gain and optical quantum efficiency of an 8 μm HARP layer. The results were used in a physical model of HARP as well as a linear cascaded model of the FPI to determine the following x-ray imaging properties in both the avalanche and nonavalanche modes as a function of E Se : (1) total gain (which is the product of avalanche gain and optical quantum efficiency); (2) linearity; (3) dynamic range; (4) gain nonuniformity resulting from thickness nonuniformity; and (5) effects of direct x-ray interaction in HARP. Our results showed that a HARP layer thickness of 8 μm can provide adequate avalanche gain and sufficient dynamic range for x-ray imaging applications to permit quantum limited operation over the range of exposures needed for radiography and fluoroscopy

  2. Hydrogen-free amorphous silicon with no tunneling states.

    Science.gov (United States)

    Liu, Xiao; Queen, Daniel R; Metcalf, Thomas H; Karel, Julie E; Hellman, Frances

    2014-07-11

    The ubiquitous low-energy excitations, known as two-level tunneling systems (TLSs), are one of the universal phenomena of amorphous solids. Low temperature elastic measurements show that e-beam amorphous silicon (a-Si) contains a variable density of TLSs which diminishes as the growth temperature reaches 400 °C. Structural analyses show that these a-Si films become denser and more structurally ordered. We conclude that the enhanced surface energetics at a high growth temperature improved the amorphous structural network of e-beam a-Si and removed TLSs. This work obviates the role hydrogen was previously thought to play in removing TLSs in the hydrogenated form of a-Si and suggests it is possible to prepare "perfect" amorphous solids with "crystal-like" properties for applications.

  3. A novel low noise hydrogenated amorphous silicon pixel detector

    OpenAIRE

    Moraes, D.; Anelli, G.; Despeisse, M.; Dissertori, G.; Garrigos, A.; Jarron, P.; Kaplon. J.; Miazza, C.; Shah, Arvind; Viertel, G. M.; Wyrsch, Nicolas

    2008-01-01

    Firsts results on particle detection using a novel silicon pixel detector are presented. The sensor consists of an array of 48 square pixels with 380 μm pitch based on a n–i–p hydrogenated amorphous silicon (a-Si:H) film deposited on top of a VLSI chip. The deposition was performed by VHF-PECVD, which enables high rate deposition up to 2 nm/s. Direct particle detection using beta particles from 63Ni and 90Sr sources was performed.

  4. The atomic and electronic structure of amorphous silicon nitride

    CERN Document Server

    Alvarez, F

    2002-01-01

    Using a novel approach to the ab initio generation of random networks we constructed two nearly stoichiometric samples of amorphous silicon nitride with the same content x= 1.29. The two 64-atom periodically-continued cubic diamond-like cells contain 28 silicons and 36 nitrogens randomly substituted, and were amorphized with a 6 f s time step by heating them to just below their melting temperature with a Harris-functional based, molecular dynamics code in the LDA approximation. The averaged total radial distribution function (RDF) obtained is compared with some existing Tersoff-like potential simulations and with experiment; ours agree with experiment. All the partial radial features are calculated and the composition of the second peak also agrees with experiment. The electronic structure is calculated and the optical gaps obtained using both a HOMO-LUMO approach and the Tauc-like procedure developed recently that gives reasonable gaps. (Author)

  5. Photo stability Assessment in Amorphous-Silicon Solar Cells

    International Nuclear Information System (INIS)

    Gandia, J. J.; Carabe, J.; Fabero, F.; Jimenez, R.; Rivero, J. M.

    1999-01-01

    The present status of amorphous-silicon-solar-cell research and development at CIEMAT requires the possibility to characterise the devices prepared from the point of view of their stability against sunlight exposure. Therefore a set of tools providing such a capacity has been developed. Together with an introduction to photovoltaic applications of amorphous silicon and to the photodegradation problem, the present work describes the process of setting up these tools. An indoor controlled photodegradation facility has been designed and built, and a procedure has been developed for the measurement of J-V characterisation in well established conditions. This method is suitable for all kinds of solar cells, even for those for which no model is still available. The photodegradation and characterisation of some cells has allowed to validate both the new testing facility and method. (Author) 14 refs

  6. Optical properties of amorphous silicon: Some problem areas

    International Nuclear Information System (INIS)

    Ravindra, N.M.; Chelle, F. de; Ance, C.; Ferraton, J.P.; Berger, J.M.; Coulibaly, S.P.

    1983-08-01

    In this presentation we essentially attempt to throw light on some problem areas concerning the various optical properties of amorphous silicon. The problems seem to emerge from the classical methods employed to determine the optical properties like the optical gap, urbach tail parameter and other related characteristics. Additional problems have emerged in recent years by virtue of many attempts to generalize the property-behaviour relationships for amorphous silicon without attributing any importance to the method of preparation of the films. It should be noted here that although many authors believe disorder to be the controlling parameter, we are of the opinion that at least for films containing fairly large concentrations of hydrogen, the hydrogen concentration has an equally important role to play. The present study has been carried out for films prepared by glow-discharge and chemical vapour deposition. (author)

  7. First-Principles Prediction of Densities of Amorphous Materials: The Case of Amorphous Silicon

    Science.gov (United States)

    Furukawa, Yoritaka; Matsushita, Yu-ichiro

    2018-02-01

    A novel approach to predict the atomic densities of amorphous materials is explored on the basis of Car-Parrinello molecular dynamics (CPMD) in density functional theory. Despite the determination of the atomic density of matter being crucial in understanding its physical properties, no first-principles method has ever been proposed for amorphous materials until now. We have extended the conventional method for crystalline materials in a natural manner and pointed out the importance of the canonical ensemble of the total energy in the determination of the atomic densities of amorphous materials. To take into account the canonical distribution of the total energy, we generate multiple amorphous structures with several different volumes by CPMD simulations and average the total energies at each volume. The density is then determined as the one that minimizes the averaged total energy. In this study, this approach is implemented for amorphous silicon (a-Si) to demonstrate its validity, and we have determined the density of a-Si to be 4.1% lower and its bulk modulus to be 28 GPa smaller than those of the crystal, which are in good agreement with experiments. We have also confirmed that generating samples through classical molecular dynamics simulations produces a comparable result. The findings suggest that the presented method is applicable to other amorphous systems, including those for which experimental knowledge is lacking.

  8. Atomic hydrogen induced defect kinetics in amorphous silicon

    NARCIS (Netherlands)

    Peeters, F. J. J.; Zheng, J.; Aarts, I. M. P.; Pipino, A. C. R.; Kessels, W. M. M.; van de Sanden, M. C. M.

    2017-01-01

    Near-infrared evanescent-wave cavity ring-down spectroscopy (CRDS) has been applied to study the defect evolution in an amorphous silicon (a-Si:H) thin film subjected to a directed beam of atomic H with a flux of (0.4–2) × 1014 cm−2 s−1. To this end, a 42 ± 2 nm a-Si:H film was grown on the total

  9. Electron trapping in amorphous silicon: A quantum molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Lin H.; Kalia, R.K.; Vashishta, P.

    1990-12-01

    Quantum molecular dynamics (QMD) simulations provide the real-time dynamics of electrons and ions through numerical solutions of the time-dependent Schrodinger and Newton equations, respectively. Using the QMD approach we have investigated the localization behavior of an excess electron in amorphous silicon at finite temperatures. For time scales on the order of a few picoseconds, we find the excess electron is localized inside a void of radius {approximately}3 {Angstrom} at finite temperatures. 12 refs.

  10. Evaluation of flat panel PMT for gamma ray imaging

    International Nuclear Information System (INIS)

    Pani, R.; Cinti, M.N.; Pellegrini, R.; Trotta, C.; Trotta, G.; Montani, L.; Ridolfi, S.; Garibaldi, F.; Scafe, R.; Belcari, N.; Del Guerra, A.

    2003-01-01

    The first position sensitive PMT, Hamamatsu R2486, developed in 1985, represented a strong technological advance for gamma-ray imaging. Hamamatsu H8500 Flat Panel PMT is the last generation position sensitive PMT: extremely compact with 2 in. active area. Its main features are: minimum peripheral dead zone (1 mm) and height of 12 mm. It was designed to be assembled in array to cover large detection area. It can represent a technical revolution for many applications in the field of gamma-ray imaging as for example nuclear medicine. This tube is based on metal channel dynode for charge multiplication and 8x8 anodes for charge collection and position calculation. In this paper we present a preliminary evaluation of the imaging performances addressed to nuclear medicine application. To this aim we have taken into account two different electronic readouts: resistive chain with Anger Camera principle and multianode readout. Flat panel PMT was coupled to CsI(Tl) and NaI(Tl) scintillation arrays. The results were also compared with the first generation PSPMT

  11. Stretched exponential relaxation processes in hydrogenated amorphous and polymorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Morigaki, Kazuo [Department of Electrical and Digital-System Engineering, Hiroshima Institute of Technology, Miyake, Saeki-ku, Hiroshima 731-5193 (Japan); Hikita, Harumi [Physics Laboratory, Meikai University, Urayasu, Chiba 279-8550 (Japan)

    2011-09-15

    Stretched exponential relaxation has been observed in various phenomena of hydrogenated amorphous silicon (a-Si:H) and hydrogenated polymorphous silicon (pm-Si:H). As an example, we take light-induced defect creation in a-Si:H and pm-Si:H, in which defect-creation process and defect-annihilation process via hydrogen movement play important roles. We have performed the Monte Carlo simulation for hydrogen movement. Hydrogen movement exhibits anomalous diffusion. In our model of light-induced defect creation in a-Si:H, a pair of two types of dangling bonds, i.e., a normal dangling bond and a hydrogen-related dangling bond, that is a dangling bond having hydrogen in the nearby site, are created under illumination, and hydrogen dissociated from the hydrogen-related dangling bond terminates a normal dangling bond via hydrogen movement. The amorphous network reflects on the dispersive parameter of the stretched exponential function in the light-induced defect creation. We discuss this issue, taking into account the difference in the amorphous network between a-Si:H and pm-Si:H (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

    Science.gov (United States)

    Madan, A.

    1984-12-10

    A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

  13. Grain boundary resistance to amorphization of nanocrystalline silicon carbide

    Science.gov (United States)

    Chen, Dong; Gao, Fei; Liu, Bo

    2015-01-01

    Under the C displacement condition, we have used molecular dynamics simulation to examine the effects of grain boundaries (GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation. The results show that the interstitials are preferentially absorbed and accumulated at GBs that provide the sinks for defect annihilation at low doses, but also driving force to initiate amorphization in the nc-SiC at higher doses. The majority of surviving defects are C interstitials, as either C-Si or C-C dumbbells. The concentration of defect clusters increases with increasing dose, and their distributions are mainly observed along the GBs. Especially these small clusters can subsequently coalesce and form amorphous domains at the GBs during the accumulation of carbon defects. A comparison between displacement amorphized nc-SiC and melt-quenched single crystal SiC shows the similar topological features. At a dose of 0.55 displacements per atom (dpa), the pair correlation function lacks long range order, demonstrating that the nc-SiC is fully amorphilized. PMID:26558694

  14. A novel compact gamma camera based on flat panel PMT

    International Nuclear Information System (INIS)

    Pani, R.; Pellegrini, R.; Cinti, M.N.; Trotta, C.; Trotta, G.; Scafe, R.; Betti, M.; Cusanno, F.; Montani, Livia; Iurlaro, Giorgia; Garibaldi, F.; Del Guerra, A.

    2003-01-01

    Over the last ten years the strong technological advances in position sensitive detectors have encouraged the scientific community to develop dedicated imagers for new diagnostic techniques in the field of isotope functional imaging. The main feature of the new detectors is the compactness that allows suitable detection geometry fitting the body anatomy. Position sensitive photomultiplier tubes (PSPMTs) have been showing very good features with continuous improvement. In 1997 a novel gamma camera was proposed based on a closely packed array of second generation 1 in PSPMTs. The main advantage is the potentially unlimited detection area but with the disadvantage of a relatively large non-active area (30%). The Hamamatsu H8500 Flat Panel PMT represents the last generation of PSPMT. Its extreme compactness allows array assembly with an improved effective area up to 97%. This paper, evaluates the potential improvement of imaging performances of a gamma camera based on the new PSPMT, compared with the two previous generation PSPMTs. To this aim the factors affecting the gamma camera final response, like PSPMT gain anode variation and position resolution, are analyzed and related to the uniformity counting response, energy resolution, position linearity, detection efficiency and intrinsic spatial resolution. The results show that uniformity of pulse height response seems to be the main parameter that provides the best imaging performances. Furthermore an extreme identification of pixels seems to be not effective to a full correction of image uniformity counting and gain response. However, considering the present technological limits, Flat Panel PSPMTs could be the best trade off between gamma camera imaging performances, compactness and large detection area

  15. Quantitative digital radiography with two dimensional flat panels

    International Nuclear Information System (INIS)

    Dinten, J.M.; Robert-Coutant, C.; Darboux, M.

    2003-01-01

    Purpose: Attenuation law relates radiographic images to irradiated object thickness and chemical composition. Film radiography exploits qualitatively this property for diagnosis. Digital radiographic flat panels present large dynamic range, reproducibility and linearity properties which open the gate for quantification. We will present, through two applications (mammography and bone densitometry), an approach to extract quantitative information from digital 2D radiographs. Material and method: The main difficulty for quantification is X-rays scatter, which superimposes to acquisition data. Because of multiple scatterings and 3D geometry dependence, it cannot be directly exploited through an exact analytical model. Therefore we have developed an approach for its estimation and subtraction from medical radiographs, based on approximations and derivations of analytical models of scatter formation in human tissues. Results: In digital mammography, the objective is to build a map of the glandular tissue thickness. Its separation from fat tissue is based on two equations: height of compression and attenuation. This last equation needs X-Rays scatter correction. In bone densitometry, physicians look for quantitative bone mineral density. Today, clinical DEXA systems use collimated single or linear detectors to eliminate scatter. This scanning technology induces poor image quality. By applying our scatter correction approach, we have developed a bone densitometer using a digital flat panel (Lexxos, DMS). It provides with accurate and reproducible measurements while presenting radiological image quality. Conclusion: These applications show how information processing, and especially X-Rays scatter processing, enables to extract quantitative information from digital radiographs. This approach, associated to Computer Aided Diagnosis algorithms or reconstructions algorithms, gives access to useful information for diagnosis. (author)

  16. Amorphous silicon prepared from silane-hydrogen mixture

    International Nuclear Information System (INIS)

    Pietruszko, S.M.

    1982-09-01

    Amorphous silicon films prepared from a d.c. discharge of 10% SiH 4 - 90% H 2 mixture are found to have properties similar to those made from 100% SiH 4 . These films are found to be quite stable against prolonged light exposure. The effect of nitrogen on the properties of these films was investigated. It was found that instead of behaving as a classical donor, nitrogen introduces deep levels in the material. Field effect experiments on a-Si:H films at the bottom (film-substrate interface) and the top (film-vacuum interface) of the film are also reported. (author)

  17. Structural properties of amorphous silicon produced by electron irradiation

    International Nuclear Information System (INIS)

    Yamasaki, J.; Takeda, S.

    1999-01-01

    The structural properties of the amorphous Si (a-Si), which was created from crystalline silicon by 2 MeV electron irradiation at low temperatures about 25 K, are examined in detail by means of transmission electron microscopy and transmission electron diffraction. The peak positions in the radial distribution function (RDF) of the a-Si correspond well to those of a-Si fabricated by other techniques. The electron-irradiation-induced a-Si returns to crystalline Si after annealing at 550 C

  18. FDTD simulation of amorphous silicon waveguides for microphotonics applications

    Science.gov (United States)

    Fantoni, A.; Lourenço, P.; Pinho, P.; Vieira, M.,

    2017-05-01

    In this work we correlate the dimension of the waveguide with small variations of the refractive index of the material used for the waveguide core. We calculate the effective modal refractive index for different dimensions of the waveguide and with slightly variation of the refractive index of the core material. These results are used as an input for a set of Finite Difference Time Domain simulation, directed to study the characteristics of amorphous silicon waveguides embedded in a SiO2 cladding. The study considers simple linear waveguides with rectangular section for studying the modal attenuation expected at different wavelengths. Transmission efficiency is determined analyzing the decay of the light power along the waveguides. As far as near infrared wavelengths are considered, a-Si:H shows a behavior highly dependent on the light wavelength and its extinction coefficient rapidly increases as operating frequency goes into visible spectrum range. The simulation results show that amorphous silicon can be considered a good candidate for waveguide material core whenever the waveguide length is as short as a few centimeters. The maximum transmission length is highly affected by the a-Si:H defect density, the mid-gap density of states and by the waveguide section area. The simulation results address a minimum requirement of 300nm×400nm waveguide section in order to keep attenuation below 1 dB cm-1.

  19. Experimental and Computer Modelling Studies of Metastability of Amorphous Silicon Based Solar Cells

    NARCIS (Netherlands)

    Munyeme, Geoffrey

    2003-01-01

    We present a combination of experimental and computer modelling studies of the light induced degradation in the performance of amorphous silicon based single junction solar cells. Of particular interest in this study is the degradation kinetics of different types of amorphous silicon single junction

  20. Density functional study of hydrogen in amorphous silicon

    Science.gov (United States)

    Tuttle, Blair R.

    Hydrogenated amorphous silicon is a relatively new material with device applications including photovoltaics. Intrinsic and light-induced electronic defects reduce the efficiency of a-Si:H solar cells. Although hydrogen is implicated in these defects, microscopic understanding of the structure and energetics of hydrogen in a-Si:H has been limited. The current limits are in part due to the lack of reliable theoretical calculations. Here we apply density functional methods to study H in a-Si:H. First, we develop a new atomistic model for a-Si:H. Then, using molecular dynamics simulations, we compare several currently available atomistic models. Finally, we calculate the properties of hydrogen in these models, including the geometric environments, the energetics, the electronic structure and the vibrational properties. Our most important conclusions are presented below. Our calculations are consistent with the following microscopic picture for long range diffusion of H in a-Si:H. Clustered Si-H bonds constitute the dominant trapping species. Upon the dissociation of 2 H atoms, a Si-Si bond forms leaving a nominally 4-fold coordinated weak bond complex. The 2 H atoms move away separately along Si-Si bond center sites until trapped at another weak bond complex. The calculated activation energy is found in agreement with established experimental results. Also, our calculations are successfully applied to observations of H evolution, hydrogen-deuterium exchange and long range diffusion in p-type amorphous silicon. Our calculations clarify the role of H during electronic defect formation. We calculate the energetics for H to move from a variety of Si-H bonds to the bulk chemical potential. For isolated Si-H bonds (i.e. in micro-cavities without any bond reconstruction) the energetics are not consistent with observations. However, if the remaining Si reconstructs with a nearby silicon creating a 5-fold coordinated defect then the energetics are in agreement with

  1. Amorphous silicon passivation for 23.3% laser processed back contact solar cells

    Science.gov (United States)

    Carstens, Kai; Dahlinger, Morris; Hoffmann, Erik; Zapf-Gottwick, Renate; Werner, Jürgen H.

    2017-08-01

    This paper presents amorphous silicon deposited at temperatures below 200 °C, leading to an excellent passivation layer for boron doped emitter and phosphorus doped back surface field areas in interdigitated back contact solar cells. A higher deposition temperature degrades the passivation of the boron emitter by an increased hydrogen effusion due to lower silicon hydrogen bond energy, proved by hydrogen effusion measurements. The high boron surface doping in crystalline silicon causes a band bending in the amorphous silicon. Under these conditions, at the interface, the intentionally undoped amorphous silicon becomes p-type conducting, with the consequence of an increased dangling bond defect density. For bulk amorphous silicon this effect is described by the defect pool model. We demonstrate, that the defect pool model is also applicable to the interface between amorphous and crystalline silicon. Our simulation shows the shift of the Fermi energy towards the valence band edge to be more pronounced for high temperature deposited amorphous silicon having a small bandgap. Application of optimized amorphous silicon as passivation layer for the boron doped emitter and phosphorus doped back surface field on the rear side of laser processed back contact solar cells, fabricated using four laser processing steps, yields an efficiency of 23.3%.

  2. Hydrogenated amorphous silicon coatings may modulate gingival cell response

    Science.gov (United States)

    Mussano, F.; Genova, T.; Laurenti, M.; Munaron, L.; Pirri, C. F.; Rivolo, P.; Carossa, S.; Mandracci, P.

    2018-04-01

    Silicon-based materials present a high potential for dental implant applications, since silicon has been proven necessary for the correct bone formation in animals and humans. Notably, the addition of silicon is effective to enhance the bioactivity of hydroxyapatite and other biomaterials. The present work aims to expand the knowledge of the role exerted by hydrogen in the biological interaction of silicon-based materials, comparing two hydrogenated amorphous silicon coatings, with different hydrogen content, as means to enhance soft tissue cell adhesion. To accomplish this task, the films were produced by plasma enhanced chemical vapor deposition (PECVD) on titanium substrates and their surface composition and hydrogen content were analyzed by means of X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared spectrophotometry (FTIR) respectively. The surface energy and roughness were measured through optical contact angle analysis (OCA) and high-resolution mechanical profilometry respectively. Coated surfaces showed a slightly lower roughness, compared to bare titanium samples, regardless of the hydrogen content. The early cell responses of human keratinocytes and fibroblasts were tested on the above mentioned surface modifications, in terms of cell adhesion, viability and morphometrical assessment. Films with lower hydrogen content were endowed with a surface energy comparable to the titanium surfaces. Films with higher hydrogen incorporation displayed a lower surface oxidation and a considerably lower surface energy, compared to the less hydrogenated samples. As regards mean cell area and focal adhesion density, both a-Si coatings influenced fibroblasts, but had no significant effects on keratinocytes. On the contrary, hydrogen-rich films increased manifolds the adhesion and viability of keratinocytes, but not of fibroblasts, suggesting a selective biological effect on these cells.

  3. Flat Panel PMT: advances in position sensitive photodetection

    International Nuclear Information System (INIS)

    Pani, R.; Pellegrini, R.; Trotta, C.; Cinti, M.N.; Bennati, P.; Trotta, G.; Iurlaro, G.; Montani, L.; Ridolfi, S.; Cusanno, F.; Garibaldi, F.

    2003-01-01

    Over the last ten years there was being a strong advancement in photodetection. Different application fields are involved in their use in particular high energy physics, astrophysics and nuclear medicine. They usually work by coupling a scintillation crystal and more recent scintillation arrays with pixel size as small as 0.5 mm. PSPMT represents today the most ready technology for photodetection with large detection areas and very high spatial resolution. Flat panel PMT represents the last technological advancement. Its dimension is 50x50 mm 2 with a narrow peripheral dead zone (0.5 mm final goal). Its compactness allow to assemble different modules closely packed, achieving large detection areas with an effective active area of 97%. In this paper we analyze the imaging performances of PSPMT by coupling two scintillation arrays and by light spot scanning of photocathode to evaluate the linearity position response, spatial resolution and uniformity gain response as a function of light distribution spread and the number of photoelectrons generated on photocathode. The results point out a very narrow PMT intrinsic charge spread and low cross-talk between anodes. Energy resolution and spatial resolution show a good linearity with DRF variation. An unexpected intra-anode gain variation is carried out. In this paper we present the results obtained with this PSPMT regarding imaging performances principally addressed to nuclear medicine application

  4. Development of 14' x 8.5' active matrix flat-panel digital x-ray detector system and imaging performance

    International Nuclear Information System (INIS)

    Park, Ji Koon; Choi, Jang Yong; Kang, Sang Sik; Lee, Dong Gil; Seok, Dae Woo; Nam, Sang Hee

    2003-01-01

    Digital radiographic systems based on solid-state detectors, commonly referred to as flat-panel detectors, are gaining popularity in clinical practice. Large area, flat panel solid state detectors are being investigated for digital radiography. The purpose of this work was to evaluate the active matrix flat panel digital x-ray detectors in terms or their modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE). In this paper, development and evaluation of a selenium-based flat-panel digital x-ray detector are described. The prototype detector has a pixel pitch of 139 μ m and a total active imaging area of 14 x 8.5 inch 2 giving a total 3.9 million pixels. This detector include a x-ray imaging layer of amorphous selenium as a photoconductor which is evaporated in vacuum state on a TFT flat panel, to make signals in proportion to incident x-ray. The film thickness was about 500 μ m. To evaluate the imaging performance of the digital radiography (DR) system developed in our group, sensitivity, linearity, the modulation transfer function (MTF), noise power spectrum (NPS) and detective quantum efficiency (DQE) of detector was measured. The measured sensitivity was 4.16 x 10 6 ehp/pixel·mR at the bias field of 10 V/ μ m: The beam condition was 41.9 KeV. Measured MTF at 2.5 lp/mm was 52%, and the DQE at 1.5 lp/mm was 75%. And the excellent linearity was showed where the coefficient of determination (r 2 ) is 0.9693

  5. Development of 14' x 8.5' active matrix flat-panel digital x-ray detector system and imaging performance

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Koon; Choi, Jang Yong; Kang, Sang Sik; Lee, Dong Gil; Seok, Dae Woo; Nam, Sang Hee [Medical Imaging Research Center of Inje Univeristy, Kimhae (Korea, Republic of)

    2003-12-15

    Digital radiographic systems based on solid-state detectors, commonly referred to as flat-panel detectors, are gaining popularity in clinical practice. Large area, flat panel solid state detectors are being investigated for digital radiography. The purpose of this work was to evaluate the active matrix flat panel digital x-ray detectors in terms or their modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE). In this paper, development and evaluation of a selenium-based flat-panel digital x-ray detector are described. The prototype detector has a pixel pitch of 139 {mu} m and a total active imaging area of 14 x 8.5 inch{sup 2} giving a total 3.9 million pixels. This detector include a x-ray imaging layer of amorphous selenium as a photoconductor which is evaporated in vacuum state on a TFT flat panel, to make signals in proportion to incident x-ray. The film thickness was about 500 {mu} m. To evaluate the imaging performance of the digital radiography (DR) system developed in our group, sensitivity, linearity, the modulation transfer function (MTF), noise power spectrum (NPS) and detective quantum efficiency (DQE) of detector was measured. The measured sensitivity was 4.16 x 10{sup 6} ehp/pixel{center_dot}mR at the bias field of 10 V/ {mu} m: The beam condition was 41.9 KeV. Measured MTF at 2.5 lp/mm was 52%, and the DQE at 1.5 lp/mm was 75%. And the excellent linearity was showed where the coefficient of determination (r{sup 2}) is 0.9693.

  6. Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

    Directory of Open Access Journals (Sweden)

    Jia Ge

    2014-01-01

    Full Text Available We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper. The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen, silane, and carbon dioxide in an industrial remote inductively coupled plasma platform. Through the investigation on CO2 partial pressure and process temperature, excellent surface passivation quality and optical properties are achieved. It is found that the hydrogen content in the film is much higher than what is commonly reported in intrinsic amorphous silicon due to oxygen incorporation. The observed slow depletion of hydrogen with increasing temperature greatly enhances its process window as well. The effective lifetime of symmetrically passivated samples under the optimal condition exceeds 4.7 ms on planar n-type Czochralski silicon wafers with a resistivity of 1 Ωcm, which is equivalent to an effective surface recombination velocity of less than 1.7 cms−1 and an implied open-circuit voltage (Voc of 741 mV. A comparison with several high quality passivation schemes for solar cells reveals that the developed inductively coupled plasma deposited films show excellent passivation quality. The excellent optical property and resistance to degradation make it an excellent substitute for industrial heterojunction silicon solar cell production.

  7. Modelling structure and properties of amorphous silicon boron nitride ceramics

    Directory of Open Access Journals (Sweden)

    Johann Christian Schön

    2011-06-01

    Full Text Available Silicon boron nitride is the parent compound of a new class of high-temperature stable amorphous ceramics constituted of silicon, boron, nitrogen, and carbon, featuring a set of properties that is without precedent, and represents a prototypical random network based on chemical bonds of predominantly covalent character. In contrast to many other amorphous materials of technological interest, a-Si3B3N7 is not produced via glass formation, i.e. by quenching from a melt, the reason being that the binary components, BN and Si3N4, melt incongruently under standard conditions. Neither has it been possible to employ sintering of μm-size powders consisting of binary nitrides BN and Si3N4. Instead, one employs the so-called sol-gel route starting from single component precursors such as TADB ((SiCl3NH(BCl2. In order to determine the atomic structure of this material, it has proven necessary to simulate the actual synthesis route.Many of the exciting properties of these ceramics are closely connected to the details of their amorphous structure. To clarify this structure, it is necessary to employ not only experimental probes on many length scales (X-ray, neutron- and electron scattering; complex NMR experiments; IR- and Raman scattering, but also theoretical approaches. These address the actual synthesis route to a-Si3B3N7, the structural properties, the elastic and vibrational properties, aging and coarsening behaviour, thermal conductivity and the metastable phase diagram both for a-Si3B3N7 and possible silicon boron nitride phases with compositions different from Si3N4: BN = 1 : 3. Here, we present a short comprehensive overview over the insights gained using molecular dynamics and Monte Carlo simulations to explore the energy landscape of a-Si3B3N7, model the actual synthesis route and compute static and transport properties of a-Si3BN7.

  8. Rapid Thermal annealing of silicon layers amorphized by ion implantation

    International Nuclear Information System (INIS)

    Hasenack, C.M.

    1986-01-01

    The recrystallization behavior and the supression mechanisms of the residual defects of silicon layers amorphized by ion implantation, were investigated. The samples were annealed with the aid of a rapid thermal annealing (RTA) system at temperature range from 850 to 1200 0 C, and annealing time up to 120 s. Random and aligned Rutherford backscattering spectroscopy were used to analyse the samples. Similarities in the recrystallization behavior for layers implanted with ions of the same chemical groups such as As or Sb; Ge, Sn or Pb, In or Ga, are observed. The results show that the effective supression of resisual defects of the recrystallired layers is vinculated to the redistribution of impurities via thermal diffusion. (author) [pt

  9. Optical characterisation of sputtered hydrogenated amorphous silicon thin films

    International Nuclear Information System (INIS)

    Mellassi, K.; Chafik El Idrissi, M.; Chouiyakh, A.; Rjeb, A.; Barhdadi, A.

    2000-09-01

    The present work is devoted to the study of some optical properties of hydrogenated amorphous silicon (a-Si:H) thin films prepared by radio-frequency cathodic sputtering technique. It is essentially focused on investigating separately the effects of increasing partial hydrogen pressure during the deposition stage, and the effects of post deposition thermal annealing on the main optical parameters of the deposited layers (refraction index, optical gap Urbach energy, etc.). We show that low hydrogen pressures allow a saturation of the dangling bonds in the material, while high pressures lead to the creation of new defects. We also show that thermal annealing under moderate temperatures allows a good improvement of the structural quality of deposited films. (author)

  10. Si-H bond dynamics in hydrogenated amorphous silicon

    Science.gov (United States)

    Scharff, R. Jason; McGrane, Shawn D.

    2007-08-01

    The ultrafast structural dynamics of the Si-H bond in the rigid solvent environment of an amorphous silicon thin film is investigated using two-dimensional infrared four-wave mixing techniques. The two-dimensional infrared (2DIR) vibrational correlation spectrum resolves the homogeneous line shapes ( 4ps waiting times. The Si-H stretching mode anharmonic shift is determined to be 84cm-1 and decreases slightly with vibrational frequency. The 1→2 linewidth increases with vibrational frequency. Frequency dependent vibrational population times measured by transient grating spectroscopy are also reported. The narrow homogeneous line shape, large inhomogeneous broadening, and lack of spectral diffusion reported here present the ideal backdrop for using a 2DIR probe following electronic pumping to measure the transient structural dynamics implicated in the Staebler-Wronski degradation [Appl. Phys. Lett. 31, 292 (1977)] in a-Si:H based solar cells.

  11. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  12. Microstructure and hydrogen dynamics in hydrogenated amorphous silicon carbides

    Science.gov (United States)

    Shinar, J.; Shinar, R.; Williamson, D. L.; Mitra, S.; Kavak, H.; Dalal, V. L.

    1999-12-01

    Small angle x-ray scattering (SAXS) and deuterium secondary-ion-mass spectrometry (DSIMS) studies of the microstructure and hydrogen dynamics in undoped rf-sputter-deposited (RFS) and undoped and boron-doped electron-cyclotron-resonance-deposited (ECR) hydrogenated amorphous silicon carbides (a-Si1-xCx:H) are described. In the RFS carbides with xcarbides with xBoron doping of the ECR carbides also reduced the bulklike Si-bonded H content, suggesting that it induces nanovoids, consistent with the observed suppression of long-range motion of most of the H and D atoms. However, a small fraction of the H atoms appeared to undergo fast diffusion, reminiscent of the fast diffusion in B-doped a-Si:H.

  13. The effect of dose reduction on image quality in digital radiography using a flat-panel detector: experimental study in rabbits

    International Nuclear Information System (INIS)

    Jung, Sung Il; Goo, Jin Mo; Lee, Hyun Ju; Moon, Woo Kyung; Lim, Kun Young; Cho, Gyung Goo; Kim, Ji Hoon; Im, Jung Gi; Choi, Jang Yong; Nam, Sang Hee

    2005-01-01

    To evaluate the effect of dose reduction on image quality in digital radiography using a flat-panel detector. Digital radiographs of 30 rabbits were obtained at two different dose levels (33.23 μGY for the standard dose group and 20.09 μGY for the reduced dose group). The amorphous selenium-based flat-panel detector system had a panel size of 7 x 8.5 inches, a matrix of 1280 x 1536 (pixels?), and a pixel pitch of 138 μm. Four observers evaluated the soft-copy images on a high-resolution video monitor (2560 x 2048 x 8 bits) in random order. The observers rated the visibility of 13 different anatomic structures on a 5-point scale, viz, the retrocardiac lung, subdiaphragmatic lung, heart border, diaphragmatic border, proximal airway, unobscured lung, liver border, kidney border, bowel gas, flank stripe, ribs, and vertebrae in the mediastinal and abdominal regions. Statistical significance was determined using Wilcoxon's signed rank test. There was no statistically significant difference in the visibility of the anatomic structures on digital radiography between the standard and reduced dose groups. Digital radiography using an amorphous selenium-based flat-panel detector can preserve the image quality, though the dose is reduced to 40% of the standard level

  14. Environmental aspects and risks of amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Van Engelenburg, B.C.W.; Alsema, E.A.

    1993-01-01

    The aim of the study on the title subject is to identify potential bottlenecks for a number of (future) solar cell technologies and to formulate ensuing recommendations with regard to the photovoltaic (PV) research and development policy in the Netherlands. The potential environmental effects of amorphous silicon PV modules are investigated for their entire life cycle. For the life cycle assessment (LCA) the product life cycle is divided into a number of processes, each of which is described by the typical product input and output flow, secondary materials input, energy input, process yield, emissions to water and air, solid waste production and the output of reusable (secondary) materials. Regarding the development towards future (energy) technologies three possible technology cases are defined: a worst, a base and a best case.In order to facilitate the material flow accounting for LCA, a special LCA computer model has been developed in connection with a data base system, containing process descriptions. Also attention is paid to possible risks concerning occupational health and safety. The overall conclusion is that, from am environmental and from a risk point of view, no serious bottlenecks can be identified in the life cycle of amorphous silicon PV modules. Within these constraints this technology can be called sustainable, when the present developments persevere and the available safety practices will be incorporated in the production processes to a large degree. Recommendations are given for further research on the title subject to fill gaps in the knowledge of parameters of certain processes for PV modules. 5 figs., 20 tabs., 2 appendices, 74 refs

  15. Correlating the properties of amorphous silicon with its flexibility volume

    Science.gov (United States)

    Fan, Zhao; Ding, Jun; Li, Qing-Jie; Ma, Evan

    2017-04-01

    For metallic glasses, "flexibility volume" has recently been introduced as a property-revealing indicator of the structural state the glass is in. This parameter incorporates the atomic volume and the vibrational mean-square displacement, to combine both static structure and dynamics information. Flexibility volume was shown to quantitatively correlate with the properties of metallic glasses [J. Ding et al., Nat. Commun. 7, 13733 (2016), 10.1038/ncomms13733]. However, it remains to be examined if this parameter is useful for other types of glasses with bonding characteristics, atomic packing structures, as well as properties that are distinctly different from metallic glasses. In this paper, we tackle this issue through systematic molecular-dynamics simulations of amorphous silicon (a -Si) models produced with different cooling rates, as a -Si is a prototypical covalently bonded network glass whose structure and properties cannot be characterized using structural parameters such as free volume used for metallic and polymeric glasses. Specifically, we demonstrate a quantitative prediction of the shear modulus of a -Si from the flexibility for atomic motion. This flexibility volume descriptor, when evaluated on the atomic scale, is shown to also correlate well with local packing, as well as with the propensity for thermal relaxations and shear transformations, providing a metric to map out and explain the structural and mechanical heterogeneity in the amorphous material. This case study of a model of covalently bonded network a -Si, together with our earlier demonstration for metallic glasses, points to the universality of flexibility volume as an indicator of the structure state to link with properties, applicable across amorphous materials with different chemical bonding and atomic packing structures.

  16. Microstructure and properties of ultrathin amorphous silicon nitride protective coating

    International Nuclear Information System (INIS)

    Yen, Bing K.; White, Richard L.; Waltman, Robert J.; Dai Qing; Miller, Dolores C.; Kellock, Andrew J.; Marchon, Bruno; Kasai, Paul H.; Toney, Michael F.; York, Brian R.; Deng Hong; Xiao Qifan; Raman, Vedantham

    2003-01-01

    The effect of N content on the structure and properties of rf reactively sputtered amorphous silicon nitride (a-SiN x ) has been studied by Rutherford backscattering spectrometry, x-ray reflectivity, ellipsometry, and nano-indentation. The N content in the film increased with the N 2 concentration in the sputtering gas until the Si 3 N 4 stoichiometry was reached. The hardness of a-SiN x increased with density, which in turn increased with the N content. The maximum hardness of 25 GPa and density of 3.2 g/cm 3 were attained at the stoichiometric Si 3 N 4 composition. With the application of a protective overcoat for magnetic disks in mind, thin a-SiN x films were deposited on CoPtCr media to examine their coverage, pinhole density, and wear resistance. According to x-ray photoelectron spectroscopy, the minimum thickness of a-SiN x required to protect the CoPtCr alloy from oxidation was 10 A, which was 10 A thinner than that of the reference amorphous nitrogenated carbon (a-CN x ). A statistic model showed this lower thickness required for a-SiN x can be attributed to its high density, which corresponds to 93% bulk density of Si 3 N 4 . Compared with 45 A a-CN x coated disks, 15 A a-SiN x coated disks had lower pinhole defect density and superior wear resistance

  17. Acquisition of flat panel displays for military applications

    Science.gov (United States)

    Van Atta, Richard H.; Goodell, Larry; Cohen, Brian S.; Lippitz, Michael J.; Marks, Michael B.; Bardsley, James N.; Kimzey, Charles H.

    1998-09-01

    Congress requested the Department of Defense (DoD) to study the acquisition of flat panel displays (FPDs) for military applications with specific attention to tradeoffs made in acquiring 'consumer-grade displays' rather than 'FPD systems that are custom designed to meet military requirements.' The study addresses: life cycle cost and performance tradeoffs, environmental and performance requirements and test data on performance of both custom and consumer-grade FPDs, life cycle cost and support issues such as commonality, supportability, and availability, potential benefits of FPD system interface standards and open systems approaches. The study found that appropriately ruggedized consumer-grade FPDs can meet the environmental and performance requirements for a broad range of military applications, including shipboard, command and control, army ground vehicles, military transport aviation, and soldier-portable computer systems. Currently, ruggedized consumer-grade FPDs cannot meet the specifications for some highly stressful applications, particularly tactical cockpit avionics. Due to lack of comparable and available data, programs have reached different judgments about the environmental tolerance and optical performance of ruggedized consumer-grade FPDs. There appear to be few systematic assessments of display performance impact on mission effectiveness. FPD availability concerns pivot on (1) the potentially rapid obsolescence of commercial FPDs and (2) the economic viability of domestic custom FPD suppliers. Display integrators using commercial FPDs are working to establish long-term supply arrangements with foreign producers of displays, but it is unclear how responsive these relationships will be in the future. Some DoD display integrators using custom FPDs believe that until the FPD market matures and stabilizes, it would be imprudent for DoD to become dependent on foreign, commercial FPD producers. However, many of these integrators are also concerned about

  18. Hologic's flat-panel detector

    Energy Technology Data Exchange (ETDEWEB)

    Ogata, Yuji; Matsumoto, Masao [Osaka Univ., Suita (Japan). Medical School; Suekane, Koji [Osaka Univ., Suita (Japan). Graduate School of Medicine

    2002-12-01

    We measured and evaluated digital, pre-sampling and overall imaging properties (characteristic curve, Modulation Transfer Function (MTF), Wiener spectrum (WS), Noise Equivalent Quanta (NEQ) and Detective Quantum Efficiency (DQE)) for Hologic's direct type and Cannon's indirect type of Flat-Panel Detector (FPD). First, the digital and overall characteristic curves of both types of FPD were more wide dynamic range than that of the S/F system. Second, the pre-sampling and overall MTF of the direct-type FPD system were superior to those of the indirect-type FPD system. Third, for identical exposures, the digital and overall WS of the direct-type FPD system were similar or worse than those of the indirect-type FPD system, and for larger exposure, the digital WS of the both types of FPD system were smaller, but the overall WS of the both types of FPD systems were larger. Fourth, the digital and overall NEQ and DQE of the direct-type FPD system were worse than those of the indirect-type FPD system at lower spatial frequencies than 1.75-2.0 mm{sup -1}, but were worse at higher spatial frequencies than 1.75-2.0 mm{sup -1}. We show radiographs made with the direct type of FPD system. Radiographs of square wave chart show the difference in MTF and contrast of the both types of FPD systems. As the result of evaluation of radiographs of chest phantom in point of noise by radiologists and radiological technologists, the direct type of FPD system needed double or more exposure dose than own standard condition, this dose was same as the indirect-type FPD system. And radiologists evaluated radiographs of human body, spatial resolution was very good, but contrast was much more likely to high at standard parameter. Therefore we have to consider exposure condition and image processing for the direct type of FPD system. (author)

  19. Electronic properties of intrinsic and doped amorphous silicon carbide films

    Energy Technology Data Exchange (ETDEWEB)

    Vetter, M. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain)]. E-mail: mvetter@eel.upc.edu; Voz, C. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Ferre, R. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Martin, I. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Orpella, A. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Puigdollers, J. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Andreu, J. [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E-08028 Barcelona (Spain); Alcubilla, R. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain)

    2006-07-26

    Hydrogenated amorphous silicon carbide (a-SiC{sub x} : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was investigated. It is found that homogenous deposition with effective surface recombination velocity lower than 100 cms{sup -1} is possible up to 6'' diameter in a simple parallel plate reactor by optimizing deposition parameters. For application in solar cell processes the conductivity of these a-SiC{sub x} : H films might become of importance since good surface passivation results from field-effect passivation which needs an insulating dielectric layer. Therefore, the temperature dependence of the dark dc conductivity of these films was investigated in the temperature range from - 20 to 260 deg. C. Two transition temperatures, T {sub s}{approx}80 deg. C and T {sub s}{approx}170 deg. C, were found where conductivity increases, resp. decreases over-exponential. From Arrhenius plots activation energy (E {sub a}) and conductivity pre-factor ({sigma} {sub 0}) were calculated for a large number of samples with different composition. A correlation between E {sub a} and {sigma} {sub 0} was found giving a Meyer-Neldel relation with a slope of 59 mV, corresponding to a material characteristic temperature T {sub m} = 400 deg. C, and an intercept at {sigma} {sub 00} = 0.1 {omega}{sup -1}cm{sup -1}.

  20. Crystallization and doping of amorphous silicon on low temperature plastic

    Science.gov (United States)

    Kaschmitter, James L.; Truher, Joel B.; Weiner, Kurt H.; Sigmon, Thomas W.

    1994-01-01

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900.degree. C.), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180.degree. C. for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180.degree. C.) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide.

  1. Electronic properties of intrinsic and doped amorphous silicon carbide films

    International Nuclear Information System (INIS)

    Vetter, M.; Voz, C.; Ferre, R.; Martin, I.; Orpella, A.; Puigdollers, J.; Andreu, J.; Alcubilla, R.

    2006-01-01

    Hydrogenated amorphous silicon carbide (a-SiC x : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was investigated. It is found that homogenous deposition with effective surface recombination velocity lower than 100 cms -1 is possible up to 6'' diameter in a simple parallel plate reactor by optimizing deposition parameters. For application in solar cell processes the conductivity of these a-SiC x : H films might become of importance since good surface passivation results from field-effect passivation which needs an insulating dielectric layer. Therefore, the temperature dependence of the dark dc conductivity of these films was investigated in the temperature range from - 20 to 260 deg. C. Two transition temperatures, T s ∼80 deg. C and T s ∼170 deg. C, were found where conductivity increases, resp. decreases over-exponential. From Arrhenius plots activation energy (E a ) and conductivity pre-factor (σ 0 ) were calculated for a large number of samples with different composition. A correlation between E a and σ 0 was found giving a Meyer-Neldel relation with a slope of 59 mV, corresponding to a material characteristic temperature T m = 400 deg. C, and an intercept at σ 00 = 0.1 Ω -1 cm -1

  2. Ballistic Phonon Penetration Depth in Amorphous Silicon Dioxide.

    Science.gov (United States)

    Yang, Lin; Zhang, Qian; Cui, Zhiguang; Gerboth, Matthew; Zhao, Yang; Xu, Terry T; Walker, D Greg; Li, Deyu

    2017-12-13

    Thermal transport in amorphous silicon dioxide (a-SiO 2 ) is traditionally treated as random walks of vibrations owing to its greatly disordered structure, which results in a mean free path (MFP) approximately the same as the interatomic distance. However, this picture has been debated constantly and in view of the ubiquitous existence of thin a-SiO 2 layers in nanoelectronic devices, it is imperative to better understand this issue for precise thermal management of electronic devices. Different from the commonly used cross-plane measurement approaches, here we report on a study that explores the in-plane thermal conductivity of double silicon nanoribbons with a layer of a-SiO 2 sandwiched in-between. Through comparing the thermal conductivity of the double ribbon samples with that of corresponding single ribbons, we show that thermal phonons can ballistically penetrate through a-SiO 2 of up to 5 nm thick even at room temperature. Comprehensive examination of double ribbon samples with various oxide layer thicknesses and van der Waals bonding strengths allows for extraction of the average ballistic phonon penetration depth in a-SiO 2 . With solid experimental data demonstrating ballistic phonon transport through a-SiO 2 , this work should provide important insight into thermal management of electronic devices.

  3. Nano structures of amorphous silicon: localization and energy gap

    Directory of Open Access Journals (Sweden)

    Z Nourbakhsh

    2013-10-01

    Full Text Available Renewable energy research has created a push for new materials; one of the most attractive material in this field is quantum confined hybrid silicon nano-structures (nc-Si:H embedded in hydrogenated amorphous silicon (a-Si:H. The essential step for this investigation is studying a-Si and its ability to produce quantum confinement (QC in nc-Si: H. Increasing the gap of a-Si system causes solar cell efficiency to increase. By computational calculations based on Density Functional Theory (DFT, we calculated a special localization factor, [G Allan et al., Phys. Rev. B 57 (1997 6933.], for the states close to HOMO and LUMO in a-Si, and found most weak-bond Si atoms. By removing these silicon atoms and passivating the system with hydrogen, we were able to increase the gap in the a-Si system. As more than 8% hydrogenate was not experimentally available, we removed about 2% of the most localized Si atoms in the almost tetrahedral a-Si system. After removing localized Si atoms in the system with 1000 Si atoms, and adding 8% H, the gap increased about 0.24 eV. Variation of the gap as a function of hydrogen percentage was in good agreement with the Tight –Binding results, but about 2 times more than its experimental value. This might come from the fact that in the experimental conditions, it does not have the chance to remove the most localized states. However, by improving the experimental conditions and technology, this value can be improved.

  4. Additive noise properties of active matrix flat-panel imagers.

    Science.gov (United States)

    Maolinbay, M; El-Mohri, Y; Antonuk, L E; Jee, K W; Nassif, S; Rong, X; Zhao, Q

    2000-08-01

    A detailed theoretical and empirical investigation of additive noise for indirect detection, active matrix flat-panel imagers (AMFPIs) has been performed. Such imagers comprise a pixelated array, incorporating photodiodes and thin-film transistors (TFTs), and an associated electronic acquisition system. A theoretical model of additive noise, defined as the noise of an imaging system in the absence of radiation, has been developed. This model is based upon an equivalent-noise-circuit representation of an AMFPI. The model contains a number of uncorrelated noise components which have been designated as pixel noise, data line thermal noise, externally coupled noise, preamplifier noise and digitization noise. Pixel noise is further divided into the following components: TFT thermal noise, shot and 1/f noise associated with the TFT and photodiode leakage currents, and TFT transient noise. Measurements of various additive noise components were carried out on a prototype imaging system based on a 508 microm pitch, 26 x 26 cm2 array. Other measurements were performed in the absence of the array, involving discrete components connected to the preamplifier input. Overall, model predictions of total additive noise as well as of pixel, preamplifier, and data line thermal noise components were in agreement with results of their measured counterparts. For the imaging system examined, the model predicts that pixel noise is dominated by shot and 1/f noise components of the photodiode and TFT at frame times above approximately 1 s. As frame time decreases, pixel noise is increasingly dominated by TFT thermal noise. Under these conditions, the reasonable degree of agreement observed between measurements and model predictions provides strong evidence that the role of TFT thermal noise has been properly incorporated into the model. Finally, the role of the resistance and capacitance of array data lines in the model was investigated using discrete component circuits at the preamplifier

  5. Analysis of IV characteristics of solar cells made of hydrogenated amorphous, polymorphous and microcrystalline silicon

    International Nuclear Information System (INIS)

    Hamadeh, H.

    2009-03-01

    The IV characteristics of pin solar cells made of amorphous, polymorphous and microcrystalline silicon were investigated. The temperature dependence was measured in the temperature range between 150 K and 395 K. This range covers the most terrestrial applications condition. Using simplex procedure, the IV parameter of the cells were deduce using line fitting. It has been shown that polymorphous silicon shows electrical properties that are close to properties of microcrystalline silicon but as it is well known, polymorphous silicon shows higher absorption similar to amorphous silicon. The polymorphous silicon solar cells showed higher efficiencies, lower shunting and higher filling factors. In the above mentioned temperature range, polymorphous silicon is the better material for the manufacturing of thin film hydrogenated silicon pin solar cells. More investigations concerning the structural properties are necessary to make stronger conclusions in regards to the stability of the material, what we hope to do in the future. (author)

  6. Test of an amorphous silicon detector in medical proton beams

    Energy Technology Data Exchange (ETDEWEB)

    Martisikova, M., E-mail: m.martisikova@dkfz.de [Medical Physics in Radiation Oncology, German Cancer Research Center, Im Neuenheimer Feld 280, D-69120 Heidelberg (Germany); Hesse, B.M. [Medical Physics in Radiation Oncology, German Cancer Research Center, Im Neuenheimer Feld 280, D-69120 Heidelberg (Germany); Nairz, O. [Heidelberger Ionenstrahl-Therapiezentrum HIT am Universitaetsklinikum Heidelberg, Im Neuenheimer Feld 450, D-69120 Heidelberg (Germany); Jaekel, O [Medical Physics in Radiation Oncology, German Cancer Research Center, Im Neuenheimer Feld 280, D-69120 Heidelberg (Germany); Heidelberger Ionenstrahl-Therapiezentrum HIT am Universitaetsklinikum Heidelberg, Im Neuenheimer Feld 450, D-69120 Heidelberg (Germany)

    2011-05-15

    Ion beam radiation therapy for cancer treatment allows for improved dose confinement to the target in comparison with the standard radiation therapy using high energy photons. Dose delivery to the patient using focused ion beam scanning over the target volume is going to be increasingly used in the upcoming years. The high precision of the dose delivery achieved in this way has to be met by practical methods for beam monitoring with sufficient spatial resolution in two dimensions. Flat panel detectors, used for photon portal imaging at the newest medical linear accelerators, are an interesting candidate for this purpose. Initial detector tests presented here were performed using proton beams with the highest available energy. The investigations include measurements of beam profiles at different beam intensities and for different beam width, as well as the signal linearity. Radiation damage was also investigated. The obtained results show that the detector is a promising candidate to be used in the therapeutic proton beams.

  7. Feasibility of Flat Panel Detector CT in Perfusion Assessment of Brain Arteriovenous Malformations: Initial Clinical Experience.

    Science.gov (United States)

    Garcia, M; Okell, T W; Gloor, M; Chappell, M A; Jezzard, P; Bieri, O; Byrne, J V

    2017-04-01

    The different results from flat panel detector CT in various pathologies have provoked some discussion. Our aim was to assess the role of flat panel detector CT in brain arteriovenous malformations, which has not yet been assessed. Five patients with brain arteriovenous malformations were studied with flat panel detector CT, DSC-MR imaging, and vessel-encoded pseudocontinuous arterial spin-labeling. In glomerular brain arteriovenous malformations, perfusion was highest next to the brain arteriovenous malformation with decreasing values with increasing distance from the lesion. An inverse tendency was observed in the proliferative brain arteriovenous malformation. Flat panel detector CT, originally thought to measure blood volume, correlated more closely with arterial spin-labeling-CBF and DSC-CBF than with DSC-CBV. We conclude that flat panel detector CT perfusion depends on the time point chosen for data collection, which is triggered too early in these patients (ie, when contrast agent appears in the superior sagittal sinus after rapid shunting through the brain arteriovenous malformation). This finding, in combination with high data variability, makes flat panel detector CT inappropriate for perfusion assessment in brain arteriovenous malformations. © 2017 by American Journal of Neuroradiology.

  8. Solution growth of microcrystalline silicon on amorphous substrates

    Energy Technology Data Exchange (ETDEWEB)

    Heimburger, Robert

    2010-07-05

    This work deals with low-temperature solution growth of micro-crystalline silicon on glass. The task is motivated by the application in low-cost solar cells. As glass is an amorphous material, conventional epitaxy is not applicable. Therefore, growth is conducted in a two-step process. The first step aims at the spatial arrangement of silicon seed crystals on conductive coated glass substrates, which is realized by means of vapor-liquid-solid processing using indium as the solvent. Seed crystals are afterwards enlarged by applying a specially developed steady-state solution growth apparatus. This laboratory prototype mainly consists of a vertical stack of a silicon feeding source and the solvent (indium). The growth substrate can be dipped into the solution from the top. The system can be heated to a temperature below the softening point of the utilized glass substrate. A temperature gradient between feeding source and growth substrate promotes both, supersaturation and material transport by solvent convection. This setup offers advantages over conventional liquid phase epitaxy at low temperatures in terms of achievable layer thickness and required growth times. The need for convective solute transport to gain the desired thickness of at least 50 {mu}m is emphasized by equilibrium calculations in the binary system indium-silicon. Material transport and supersaturation conditions inside the utilized solution growth crucible are analyzed. It results that the solute can be transported from the lower feeding source to the growth substrate by applying an appropriate heating regime. These findings are interpreted by means of a hydrodynamic analysis of fluid flow and supporting FEM simulation. To ensure thermodynamic stability of all materials involved during steady-state solution growth, the ternary phase equilibrium between molybdenum, indium and silicon at 600 C was considered. Based on the obtained results, the use of molybdenum disilicide as conductive coating

  9. Environmental life cycle assessment of roof-integrated flexible amorphous silicon/nanocrystalline silicon solar cell laminate

    NARCIS (Netherlands)

    Mohr, N.J.; Meijer, A.; Huijbregts, M.A.J.; Reijnders, L.

    2013-01-01

    This paper presents an environmental life cycle assessment of a roof-integrated flexible solar cell laminate with tandem solar cells composed of amorphous silicon/nanocrystalline silicon (a-Si/nc-Si). The a-Si/nc-Si cells are considered to have 10% conversion efficiency. Their expected service life

  10. Thin-film amorphous silicon germanium solar cells with p-and n-type hydrogenated silicon oxide layers

    NARCIS (Netherlands)

    Si, F.T.; Isabella, O.; Zeman, M.

    2017-01-01

    Mixed-phase hydrogenated silicon oxide (SiOx:H) is applied to thin-film hydrogenated amorphous silicon germanium (a-SiGe:H) solar cells serving as both p-doped and n-doped layers. The bandgap of p-SiOx:H is adjusted to achieve a highly-transparent window layer while also providing a strong electric

  11. Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+

    International Nuclear Information System (INIS)

    Tsai, M.Y.; Streetman, B.G.

    1979-01-01

    Electrical properties of recrystallized amorphous silicon layers, formed by BF + 2 implants or Si + +B + implants, have been studied by differential resistivity and Hall-effect measurements. Electrical carrier distribution profiles show that boron atoms inside the amorphized Si layers can be fully activated during recrystallization at 550 0 C. The mobility is also recovered. However, the tail of the B distribution, located inside a damaged region near the original amorphous-crystalline interface, remains inactive. This inactive tail has been observed for all samples implanted with BF + 2 . Only in a thicker amorphous layer, formed for example by Si + predamage implants, can the entire B profile be activated. The etch rate of amorphous silicon in HF and the effect of fluorine on the recrystallization rate are also reported

  12. Size modulation of nanocrystalline silicon embedded in amorphous silicon oxide by Cat-CVD

    International Nuclear Information System (INIS)

    Matsumoto, Y.; Godavarthi, S.; Ortega, M.; Sanchez, V.; Velumani, S.; Mallick, P.S.

    2011-01-01

    Different issues related to controlling size of nanocrystalline silicon (nc-Si) embedded in hydrogenated amorphous silicon oxide (a-SiO x :H) deposited by catalytic chemical vapor deposition (Cat-CVD) have been reported. Films were deposited using tantalum (Ta) and tungsten (W) filaments and it is observed that films deposited using tantalum filament resulted in good control on the properties. The parameters which can affect the size of nc-Si domains have been studied which include hydrogen flow rate, catalyst and substrate temperatures. The deposited samples are characterized by X-ray diffraction, HRTEM and micro-Raman spectroscopy, for determining the size of the deposited nc-Si. The crystallite formation starts for Ta-catalyst around the temperature of 1700 o C.

  13. Fiber Optic Excitation of Silicon Microspheres in Amorphous and Crystalline Fluids

    NARCIS (Netherlands)

    Yilmaz, H.; Murib, M.S.; Serpenguzel, A.

    2016-01-01

    This study investigates the optical resonance spectra of free-standing monolithic single crystal silicon microspheres immersed in various amorphous fluids, such as air, water, ethylene glycol, and 4-Cyano-4’-pentylbiphenyl nematic liquid crystal. For the various amorphous fluids,

  14. The design and imaging characteristics of dynamic, solid-state, flat-panel x-ray image detectors for digital fluoroscopy and fluorography

    International Nuclear Information System (INIS)

    Cowen, A.R.; Davies, A.G.; Sivananthan, M.U.

    2008-01-01

    Dynamic, flat-panel, solid-state, x-ray image detectors for use in digital fluoroscopy and fluorography emerged at the turn of the millennium. This new generation of dynamic detectors utilize a thin layer of x-ray absorptive material superimposed upon an electronic active matrix array fabricated in a film of hydrogenated amorphous silicon (a-Si:H). Dynamic solid-state detectors come in two basic designs, the indirect-conversion (x-ray scintillator based) and the direct-conversion (x-ray photoconductor based). This review explains the underlying principles and enabling technologies associated with these detector designs, and evaluates their physical imaging characteristics, comparing their performance against the long established x-ray image intensifier television (TV) system. Solid-state detectors afford a number of physical imaging benefits compared with the latter. These include zero geometrical distortion and vignetting, immunity from blooming at exposure highlights and negligible contrast loss (due to internal scatter). They also exhibit a wider dynamic range and maintain higher spatial resolution when imaging over larger fields of view. The detective quantum efficiency of indirect-conversion, dynamic, solid-state detectors is superior to that of both x-ray image intensifier TV systems and direct-conversion detectors. Dynamic solid-state detectors are playing a burgeoning role in fluoroscopy-guided diagnosis and intervention, leading to the displacement of x-ray image intensifier TV-based systems. Future trends in dynamic, solid-state, digital fluoroscopy detectors are also briefly considered. These include the growth in associated three-dimensional (3D) visualization techniques and potential improvements in dynamic detector design

  15. Carrier transport in amorphous silicon utilizing picosecond photoconductivity

    Science.gov (United States)

    Johnson, A. M.

    1981-08-01

    The development of a high-speed electronic measurement capability permitted the direct observation of the transient photoresponse of amorphous silicon (a-Si) with a time resolution of approximately 10ps. This technique was used to measure the initial mobility of photogenerated (2.1eV) free carriers in three types of a-Si having widely different densities of structural defects (i.e., as prepared by: (1) RF glow discharge (a-Si:H); (2) chemical vapor deposition; and (3) evaporation in ultra-high vacuum). In all three types of a-Si, the same initial mobility of approximately 1 cu cm/Vs at room temperature was found. This result tends to confirm the often-made suggestion that the free carrier mobility is determined by the influence of shallow states associated with the disorder in the random atomic network, and is an intrinsic property of a-Si which is unaffected by the method of preparation. The rate of decay of the photocurrent correlates with the density of structural defects and varies from 4ps to 200ps for the three types of a-Si investigated. The initial mobility of a-Si:H was found to be thermally activated. The possible application of extended state transport controlled by multiple trapping and small polaron formation is discussed.

  16. Amorphous silicon-based PINIP structure for color sensor

    International Nuclear Information System (INIS)

    Zhang, S.; Raniero, L.; Fortunato, E.; Ferreira, I.; Aguas, H.; Martins, R.

    2005-01-01

    A series of hydrogenated amorphous silicon carbide (a-SiC:H) films was prepared by plasma enhanced chemical vapor deposition (PECVD) technology. The microstructure and photoelectronic properties of the film are investigated by absorption spectra (in the ultraviolet to near-infrared range) and Fourier transform infrared (FTIR) spectra. The results show that good band gap controllability (1.83-3.64 eV) was achieved by adjusting the plasma parameters. In the energy range around 2.1 eV, the a-Si 1-x C x :H films exhibit good photosensitivity, opening the possibility to use this wide band gap material for device application, especially when blue color detectors are concerned. A multilayer device with a stack of glass/TCO(ZnO:Ga)/P(a-SiC:H)/I(a-SiC:H)/N(a-Si:H)/I(a-Si:H)/P(a-Si:H)/Al has been prepared. The devices can detect blue and red colors under different bias voltages. The optimization of the device, especially the film thickness and the band gap offset used to achieve better detectivity, is also done in this work

  17. Laminated Amorphous Silicon Neutron Detector (pre-print)

    International Nuclear Information System (INIS)

    McHugh, Harry; Branz, Howard; Stradins, Paul; Xu, Yueqin

    2009-01-01

    An internal R and D project was conducted at the Special Technologies Laboratory (STL) of National Security Technologies, LLC (NSTec), to determine the feasibility of developing a multi-layer boron-10 based thermal neutron detector using the amorphous silicon (AS) technology currently employed in the manufacture of liquid crystal displays. The boron-10 neutron reaction produces an alpha that can be readily detected. A single layer detector, limited to an approximately 2-micron-thick layer of boron, has a theoretical sensitivity of about 3%; hence a thin multi-layer device with high sensitivity can theoretically be manufactured from single layer detectors. Working with National Renewable Energy Laboratory (NREL), an AS PiN diode alpha detector was developed and tested. The PiN diode was deposited on a boron-10 coated substrate. Testing confirmed that the neutron sensitivity was nearly equal to the theoretical value of 3%. However, adhesion problems with the boron-10 coating prevented successful development of a prototype detector. Future efforts will include boron deposition work and development of integrated AS signal processing circuitry.

  18. Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics.

    Science.gov (United States)

    Johlin, Eric; Al-Obeidi, Ahmed; Nogay, Gizem; Stuckelberger, Michael; Buonassisi, Tonio; Grossman, Jeffrey C

    2016-06-22

    While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improved hole collection in thick absorber layers. This is achieved by etching an array of 150 nm diameter holes into intrinsic a-Si:H and then coating the structured material with p-type a-Si:H and a conformal zinc oxide transparent conducting layer. The inclusion of these nanoholes yields relative power conversion efficiency (PCE) increases of ∼45%, from 7.2 to 10.4% PCE for small area devices. Comparisons of optical properties, time-of-flight mobility measurements, and internal quantum efficiency spectra indicate this efficiency is indeed likely occurring from an improved collection pathway provided by the nanostructuring of the devices. Finally, we estimate that through modest optimizations of the design and fabrication, PCEs of beyond 13% should be obtainable for similar devices.

  19. Diffusion of Gold and Platinum in Amorphous Silicon

    CERN Multimedia

    Voss, T L

    2002-01-01

    By means of radiotracer experiments the diffusion of Au and Pt in radio-frequency-sputtered amorphous silicon (a-Si) was investigated. Specimens of a-Si with homogeneous doping concentrations of Au or Pt in the range 0$\\, - \\,$1,7~at.\\% were produced by co-sputtering of Si and Au or Pt, respectively. An additional tiny concentration of radioactive $^{195}$Au or $^{188}$Pt, about 10~at.ppm, was implanted at ISOLDE. The resulting Gaussian distribution of the implanted atoms served as a probe for measuring diffusion coefficients at various doping concentrations. It was found that for a given doping concentration the diffusion coefficients show Arrhenius-type temperature dependences, where the diffusion enthalpy and the pre-exponential factor depend on the doping concentration. From these results it was concluded that in a-Si Au and Pt undergo direct, interstitial-like diffusion that is retarded by temporary trapping of the radiotracer atoms at vacancy-type defects with different binding enthalpies. In the case o...

  20. Experiment and Simulation Study on the Amorphous Silicon Photovoltaic Walls

    Directory of Open Access Journals (Sweden)

    Wenjie Zhang

    2014-01-01

    Full Text Available Based on comparative study on two amorphous silicon photovoltaic walls (a-Si PV walls, the temperature distribution and the instant power were tested; and with EnergyPlus software, similar models of the walls were built to simulate annual power generation and air conditioning load. On typical sunshine day, the corresponding position temperature of nonventilated PV wall was generally 0.5~1.5°C higher than that of ventilated one, while the power generation was 0.2%~0.4% lower, which was consistent with the simulation results with a difference of 0.41% in annual energy output. As simulation results, in summer, comparing the PV walls with normal wall, the heat per unit area of these two photovoltaic walls was 5.25 kWh/m2 (nonventilated and 0.67 kWh/m2 (ventilated higher, respectively. But in winter the heat loss of nonventilated one was smaller, while ventilated PV wall was similar to normal wall. To annual energy consumption of heating and cooling, the building with ventilated PV wall and normal wall was also similar but slightly better than nonventilated one. Therefore, it is inferred that, at low latitudes, such as Zhuhai, China, air gap ventilation is suitable, while the length to thickness ratio of the air gap needs to be taken into account.

  1. Nonlinear Optical Functions in Crystalline and Amorphous Silicon-on-Insulator Nanowires

    DEFF Research Database (Denmark)

    Baets, R.; Kuyken, B.; Liu, X.

    2012-01-01

    Silicon-on-Insulator nanowires provide an excellent platform for nonlinear optical functions in spite of the two-photon absorption at telecom wavelengths. Work on both crystalline and amorphous silicon nanowires is reviewed, in the wavelength range of 1.5 to 2.5 µm....

  2. Amorphous silicon carbide ultramicroelectrode arrays for neural stimulation and recording

    Science.gov (United States)

    Deku, Felix; Cohen, Yarden; Joshi-Imre, Alexandra; Kanneganti, Aswini; Gardner, Timothy J.; Cogan, Stuart F.

    2018-02-01

    Objective. Foreign body response to indwelling cortical microelectrodes limits the reliability of neural stimulation and recording, particularly for extended chronic applications in behaving animals. The extent to which this response compromises the chronic stability of neural devices depends on many factors including the materials used in the electrode construction, the size, and geometry of the indwelling structure. Here, we report on the development of microelectrode arrays (MEAs) based on amorphous silicon carbide (a-SiC). Approach. This technology utilizes a-SiC for its chronic stability and employs semiconductor manufacturing processes to create MEAs with small shank dimensions. The a-SiC films were deposited by plasma enhanced chemical vapor deposition and patterned by thin-film photolithographic techniques. To improve stimulation and recording capabilities with small contact areas, we investigated low impedance coatings on the electrode sites. The assembled devices were characterized in phosphate buffered saline for their electrochemical properties. Main results. MEAs utilizing a-SiC as both the primary structural element and encapsulation were fabricated successfully. These a-SiC MEAs had 16 penetrating shanks. Each shank has a cross-sectional area less than 60 µm2 and electrode sites with a geometric surface area varying from 20 to 200 µm2. Electrode coatings of TiN and SIROF reduced 1 kHz electrode impedance to less than 100 kΩ from ~2.8 MΩ for 100 µm2 Au electrode sites and increased the charge injection capacities to values greater than 3 mC cm-2. Finally, we demonstrated functionality by recording neural activity from basal ganglia nucleus of Zebra Finches and motor cortex of rat. Significance. The a-SiC MEAs provide a significant advancement in the development of microelectrodes that over the years has relied on silicon platforms for device manufacture. These flexible a-SiC MEAs have the potential for decreased tissue damage and reduced

  3. Atomistic modeling of ion beam induced amorphization in silicon

    International Nuclear Information System (INIS)

    Pelaz, Lourdes; Marques, Luis A.; Lopez, Pedro; Santos, Ivan; Aboy, Maria; Barbolla, Juan

    2005-01-01

    Ion beam induced amorphization in Si has attracted significant interest since the beginning of the use of ion implantation for the fabrication of Si devices. Nowadays, a renewed interest in the modeling of amorphization mechanisms at atomic level has arisen due to the use of preamorphizing implants and high dopant implantation doses for the fabrication of nanometric-scale Si devices. In this work, we briefly describe the existing phenomenological and defect-based amorphization models. We focus on the atomistic model we have developed to describe ion beam induced amorphization in Si. In our model, the building block for the amorphous phase is the bond defect or IV pair, whose stability increases with the number of surrounding IV pairs. This feature explains the regrowth behavior of different damage topologies and the kinetics of the crystalline to amorphous transition. The model provides excellent quantitative agreement with experimental results

  4. Fabrication of amorphous silicon nanoribbons by atomic force microscope tip-induced local oxidation for thin film device applications

    International Nuclear Information System (INIS)

    Pichon, L; Rogel, R; Demami, F

    2010-01-01

    We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as a mask for the elaboration of a thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as a mask during plasma etching of the amorphous layer leading to the formation of a nanoribbon. Such an amorphous silicon nanoribbon is used for the fabrication of the resistor

  5. A new concept of monolithic silicon pixel detectors Hydrogenated amorphous silicon on ASIC

    CERN Document Server

    Anelli, G; Despeisse, M; Dissertori, G; Jarron, P; Miazza, C; Moraes, D; Shah, A; Viertel, Gert M; Wyrsch, N

    2004-01-01

    A new concept of a monolithic pixel radiation detector is presented. It is based on the deposition of a film of hydrogenated amorphous silicon (a-Si:H) on an Application Specific Integrated Circuit (ASIC) . For almost 20 years, several research groups tried to demonstrate that a-Si:H material could be used to build radiation detectors for particle physics applications. A novel approach is made by the deposition of a-Si:H directly on the readout ASIC. This technique is similar to the concept of monolithic pixel detectors, but offers considerable advantages. We present first results from tests of a n- i-p a-Si:H diode array deposited on a glass substrate and on the a- Si:H above ASIC prototype detector.

  6. Electron field emission from amorphous semiconductor thin films

    International Nuclear Information System (INIS)

    Forrest, R.D.

    2001-01-01

    The flat panel display market requires new and improved technologies in order to keep up with the requirements of modem lifestyles. Electron field emission from thin film amorphous semiconductors is potentially such a technology. For this technology to become viable, improvements in the field emitting properties of these materials must be achieved. To this end, it is important that a better understanding of the emission mechanisms responsible is attained. Amorphous carbon thin films, amorphous silicon thin films and other materials have been deposited, in-house and externally. These materials have been characterised using ellipsometry, profilometry, optical absorption, scanning electron microscopy, atomic force microscopy, electron paramagnetic resonance and Rutherford backscattering spectroscopy. An experimental system for evaluating the electron field emitting performance of thin films has been developed. In the process of developing thin film cathodes in this study, it has been possible to add a new and potentially more useful semiconductor, namely amorphous silicon, to the family of cold cathode emitters. Extensive experimental field emission data from amorphous carbon thin films, amorphous silicon thin films and other materials has been gathered. This data has been used to determine the mechanisms responsible for the observed electron emission. Preliminary computer simulations using appropriate values for the different material properties have exhibited emission mechanisms similar to those identified by experiment. (author)

  7. Performance Study of an aSi Flat Panel Detector for Fast Neutron Imaging of Nuclear Waste

    Energy Technology Data Exchange (ETDEWEB)

    Schumann, M.; Mauerhofer, E. [Institute of Energy and Climate Research - Nuclear Waste Management and Reactor Safety, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Engels, R.; Kemmerling, G. [Central Institute for Engineering, Electronics and Analytics - Electronic Systems, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany); Frank, M. [MATHCCES - Department of Mathematics, RWTH Aachen University, 52062 Aachen (Germany); Havenith, A.; Kettler, J.; Klapdor-Kleingrothaus, T. [Institute of Nuclear Engineering and Technology Transfer, RWTH Aachen University, 52062 Aachen (Germany); Schitthelm, O. [Corporate Technology, Siemens AG, 91058 Erlangen (Germany)

    2015-07-01

    Radioactive waste must be characterized to check its conformance for intermediate storage and final disposal according to national regulations. For the determination of radio-toxic and chemo-toxic contents of radioactive waste packages non-destructive analytical techniques are preferentially used. Fast neutron imaging is a promising technique to assay large and dense items providing, in complementarity to photon imaging, additional information on the presence of structures in radioactive waste packages. Therefore the feasibility of a compact Neutron Imaging System for Radioactive waste Analysis (NISRA) using 14 MeV neutrons is studied in a cooperation framework of Forschungszentrum Juelich GmbH, RWTH Aachen University and Siemens AG. However due to the low neutron emission of neutron generators in comparison to research reactors the challenging task resides in the development of an imaging detector with a high efficiency, a low sensitivity to gamma radiation and a resolution sufficient for the purpose. The setup is composed of a commercial D-T neutron generator (Genie16GT, Sodern) with a surrounding shielding made of polyethylene, which acts as a collimator and an amorphous silicon flat panel detector (aSi, 40 x 40 cm{sup 2}, XRD-1642, Perkin Elmer). Neutron detection is achieved using a general propose plastic scintillator (EJ-260, Eljen Technology) linked to the detector. The thermal noise of the photodiodes is reduced by employing an entrance window made of aluminium. Optimal gain and integration time for data acquisition are set by measuring the response of the detector to the radiation of a 500 MBq {sup 241}Am-source. Detector performance was studied by recording neutron radiography images of materials with various, but well known, chemical compositions, densities and dimensions (Al, C, Fe, Pb, W, concrete, polyethylene, 5 x 8 x 10 cm{sup 3}). To simulate gamma-ray emitting waste radiographs in presence of a gamma-ray sources ({sup 60}Co, {sup 137}Cs, {sup 241

  8. Analysis of a free-running synchronization artifact correction for MV-imaging with aSi:H flat panels

    Energy Technology Data Exchange (ETDEWEB)

    Mooslechner, Michaela; Mitterlechner, Bernhard; Weichenberger, Harald; Sedlmayer, Felix; Deutschmann, Heinz [Institute for Research and Development on Advanced Radiation Technologies (radART), Paracelsus Medical University, Salzburg 5020, Austria and University Clinic for Radiotherapy and Radio-Oncology, Landeskrankenhaus Salzburg, Paracelsus Medical University Clinics, Salzburg 5020 (Austria); Huber, Stefan [Institute for Research and Development on Advanced Radiation Technologies (radART), Paracelsus Medical University, Salzburg 5020 (Austria)

    2013-03-15

    Purpose: Solid state flat panel electronic portal imaging devices (EPIDs) are widely used for megavolt (MV) photon imaging applications in radiotherapy. In addition to their original purpose in patient position verification, they are convenient to use in quality assurance and dosimetry to verify beam geometry and dose deposition or to perform linear accelerator (linac) calibration procedures. However, native image frames from amorphous silicon (aSi:H) detectors show a range of artifacts which have to be eliminated by proper correction algorithms. When a panel is operated in free-running frame acquisition mode, moving vertical stripes (periodic synchronization artifacts) are a disturbing feature in image frames. Especially for applications in volumetric intensity modulated arc therapy (VMAT) or motion tracking, the synchronization (sync) artifacts are the limiting factor for potential and accuracy since they become even worse at higher frame rates and at lower dose rates, i.e., linac pulse repetition frequencies (PRFs). Methods: The authors introduced a synchronization correction method which is based on a theoretical model describing the interferences of the panel's readout clocking with the linac's dose pulsing. Depending on the applied PRF, a certain number of dose pulses is captured per frame which is readout columnwise, sequentially. The interference of the PRF with the panel readout is responsible for the period and the different gray value levels of the sync stripes, which can be calculated analytically. Sync artifacts can then be eliminated multiplicatively in precorrected frames without additional information about radiation pulse timing. Results: For the analysis, three aSi:H EPIDs of various types were investigated with 6 and 15 MV photon beams at varying PRFs of 25, 50, 100, 200, and 400 pulses per second. Applying the sync correction at panels with gadolinium oxysulfide scintillators improved single frame flood field image quality drastically

  9. Effect of light trapping in an amorphous silicon solar cell

    International Nuclear Information System (INIS)

    Iftiquar, S.M.; Jung, Juyeon; Park, Hyeongsik; Cho, Jaehyun; Shin, Chonghoon; Park, Jinjoo; Jung, Junhee; Bong, Sungjae; Kim, Sunbo; Yi, Junsin

    2015-01-01

    Light trapping in amorphous silicon based solar cell has been investigated theoretically. The substrate for these cells can be textured, including pyramidally textured c-Si wafer, to improve capture of incident light. A thin silver layer, deposited on the substrate of an n–i–p cell, ultimately goes at the back of the cell structure and can act a back reflector to improve light trapping. The two physical solar cells we investigated had open circuit voltages (V oc ) of 0.87, 0.90 V, short circuit current densities (J sc ) of 14.2, 15.36 mA/cm 2 respectively. The first cell was investigated for the effect on its performance while having and not having light trapping scheme (LT), when thickness of the active layer (d i ) was changed in the range of 100 nm to 800 nm. In both the approaches, for having or not having LT, the short circuit current density increases with d i while the V oc and fill factor, decreases steadily. However, maximum cell efficiency can be obtained when d i = 400 nm, and hence it was considered optimized thickness of the active layer, that was used for further investigation. With the introduction of light trapping to the second cell, it shows a further enhancement in J sc and red response of the external quantum efficiency to 16.6 mA/cm 2 and by 11.1% respectively. Considering multiple passages of light inside the cell, we obtained an improvement in cell efficiency from 9.7% to 10.6%. - Highlights: • A theoretical analysis of light trapping in p–i–n and n–i–p type solar cells • J sc increases and V oc decreases with the increase in i-layer thickness. • Observed optimized thickness of i-layer as 400 nm • J sc improved from 15.4 mA/cm 2 to 16.6 mA/cm 2 due to the light trapping. • Efficiency (η) improved from 9.7% to 10.6% due to better red response of the EQE

  10. Ideality and Tunneling Level Systems (TLS) in amorphous silicon films.

    Science.gov (United States)

    Hellman, Frances

    Heat capacity, sound velocity, and internal friction of covalently bonded amorphous silicon (a-Si) films with and without hydrogen show that low energy excitations commonly called tunneling or two level systems (TLS) can be tuned over nearly 3 decades, from below detectable limits to the range commonly seen in glassy systems. This tuning is accomplished by growth temperature, thickness, growth rate, light soaking or annealing. We see a strong correlation with atomic density in a-Si and in literature analysis of other glasses, as well as with dangling bond density, sound velocity, and bond angle distribution as measured by Raman spectroscopy, but TLS density varies by orders of magnitude while these other measures of disorder vary by less than a factor of two. The lowest TLS films are grown at temperatures near 0.8 of the theoretical glass transition temperature of Si, similar to work on polymer films and suggestive that the high surface mobility at relatively low temperature of vapor deposition can produce materials close to an ideal glass, with higher density, lower energy, and low TLS due to fewer nearby configurations with similarly low energy. The TLS measured by heat capacity and internal friction are strongly correlated for pure a-Si, but not for hydrogenated a-Si, suggesting that the standard TLS model works for a-Si, but that a-Si:H possess TLS that are decoupled from the acoustic waves measured by internal friction. Internal friction measures those TLS that introduce mechanical damping; we are in the process of measuring low T dielectric loss which yield TLS with dipole moments in order to explore the correlation between different types of TLS. Additionally, a strong correlation is found between an excess T3 term (well above the sound velocity-derived Debye contribution) and the linear term in heat capacity, suggesting a common origin. I thank members of my research group and my collaborators for contributions to this work and NSF-DMR-1508828 for support.

  11. Electron-trapping-triggered anneal of defect states in silicon-rich hydrogenated amorphous silicon nitride

    International Nuclear Information System (INIS)

    Oversluizen, G.; Lodders, W.H.; Johnson, M.T.; van der Put, A.A.

    1997-01-01

    The dc-current stress behavior of Mo/a-SiN x H y /Mo thin-film diodes is discussed for several a-SiN x H y -plasma-deposition conditions. Current transport is governed by thermionic field emission of electrons over a reverse biased Schottky barrier. The barrier height is determined by the a-SiN x H y -plasma-deposition conditions. Therefore these back-to-back Schottky devices provide an elegant way to perform dc-current stressing at several well defined carrier densities for similar stress fields. It is shown that such experiments allow assessment of defect-state creation/anneal mechanisms in a-SiN x H y . An electron-trapping-triggered anneal mechanism accounts for the observed dependence of the defect density at the electrode injecting contact (cathode) on the hole-barrier height at the anode. Also a new microscopically detailed anneal reaction scheme is proposed. The defect-state creation/anneal mechanism is expected to be generally applicable for all silicon-rich hydrogenated amorphous silicon alloys. copyright 1997 American Institute of Physics

  12. Origins of hole traps in hydrogenated nanocrystalline and amorphous silicon revealed through machine learning

    Science.gov (United States)

    Mueller, Tim; Johlin, Eric; Grossman, Jeffrey C.

    2014-03-01

    Genetic programming is used to identify the structural features most strongly associated with hole traps in hydrogenated nanocrystalline silicon with very low crystalline volume fraction. The genetic programming algorithm reveals that hole traps are most strongly associated with local structures within the amorphous region in which a single hydrogen atom is bound to two silicon atoms (bridge bonds), near fivefold coordinated silicon (floating bonds), or where there is a particularly dense cluster of many silicon atoms. Based on these results, we propose a mechanism by which deep hole traps associated with bridge bonds may contribute to the Staebler-Wronski effect.

  13. Contributions to the Theory of the Properties of Hydrogenated Amorphous Silicon.

    Science.gov (United States)

    1983-07-21

    isolated gests significant interactions between the four I 35 I 23 THEORETICAL STUDY OF THE HYDROGEN-SATURATED IDEAL... 6605 SI-SI BONED 31(2) --SI...by Spear W.E. ( CICL University of Edinburgh) 467. 52 P8 Theoretical Study of Optical Absorption in Hydrogenated Amorphous Silicon W.E. Pickett...Amorphous and Liquid Semiconductors, ed. W.E. Spear ( CICL Univ. of Edinburgh, 1977), p. 467; P. Viktorovitch, G. Moddel, J. Blake and W. Paul, J. Appl

  14. In situ observation of shear-driven amorphization in silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    He, Yang; Zhong, Li; Fan, Feifei; Wang, Chongmin; Zhu, Ting; Mao, Scott X.

    2016-09-19

    Amorphous materials have attracted great interest in the scientific and technological fields. An amorphous solid usually forms under the externally driven conditions of melt-quenching, irradiation and severe mechanical deformation. However, its dynamic formation process remains elusive. Here we report the in situ atomic-scale observation of dynamic amorphization processes during mechanical straining of nanoscale silicon crystals by high resolution transmission electron microscopy (HRTEM). We observe the shear-driven amorphization (SDA) occurring in a dominant shear band. The SDA involves a sequence of processes starting with the shear-induced diamond-cubic to diamond-hexagonal phase transition that is followed by dislocation nucleation and accumulation in the newly formed phase, leading to the formation of amorphous silicon. The SDA formation through diamond-hexagonal phase is rationalized by its structural conformity with the order in the paracrystalline amorphous silicon, which maybe widely applied to diamond-cubic materials. Besides, the activation of SDA is orientation-dependent through the competition between full dislocation nucleation and partial gliding.

  15. On Energy Balance and Production Costs in Tubular and Flat Panel Photobioreactors

    NARCIS (Netherlands)

    Norsker, N.H.; Barbosa, M.J.; Vermue, M.H.; Wijffels, R.H.

    2012-01-01

    Reducing mixing in both flat panel and tubular photobioreactors can result in a positive net energy balance with state-of-the-art technology and Dutch weather conditions. In the tubular photobioreactor, the net energy balance becomes positive at velocities <0.3 ms-1, at which point the biomass

  16. Hydrogen diffusion and induced-crystallization in intrinsic and doped hydrogenated amorphous silicon films

    International Nuclear Information System (INIS)

    Kail, F.; Hadjadj, A.; Roca i Cabarrocas, P.

    2005-01-01

    We have studied the evolution of the structure of intrinsic and doped hydrogenated amorphous silicon films exposed to a hydrogen plasma. For this purpose, we combine in situ spectroscopic ellipsometry and secondary ion mass spectrometry measurements. We show that hydrogen diffuses faster in boron-doped hydrogenated amorphous silicon than in intrinsic samples, leading to a thicker subsurface layer from the early stages of hydrogen plasma exposure. At longer times, hydrogen plasma leads to the formation of a microcrystalline layer via chemical transport, but there is no evidence for crystallization of the a-Si:H substrate. Moreover, we observe that once the microcrystalline layer is formed, hydrogen diffuses out of the sample

  17. On electronic structure of polymer-derived amorphous silicon carbide ceramics

    Science.gov (United States)

    Wang, Kewei; Li, Xuqin; Ma, Baisheng; Wang, Yiguang; Zhang, Ligong; An, Linan

    2014-06-01

    The electronic structure of polymer-derived amorphous silicon carbide ceramics was studied by combining measurements of temperature-dependent conductivity and optical absorption. By comparing the experimental results to theoretical models, electronic structure was constructed for a carbon-rich amorphous silicon carbide, which revealed several unique features, such as deep defect energy level, wide band-tail band, and overlap between the band-tail band and defect level. These unique features were discussed in terms of the microstructure of the material and used to explain the electric behavior.

  18. Electrodeposition at room temperature of amorphous silicon and germanium nanowires in ionic liquid

    Energy Technology Data Exchange (ETDEWEB)

    Martineau, F; Namur, K; Mallet, J; Delavoie, F; Troyon, M; Molinari, M [Laboratoire de Microscopies et d' Etude de Nanostructures (LMEN EA3799), Universite de Reims Champagne Ardennes (URCA), Reims Cedex 2 (France); Endres, F, E-mail: michael.molinari@univ-reims.fr [Institute of Particle Technology, Chair of Interface Processes, Clausthal University of Technology, D-36678 Clausthal-Zellerfeld (Germany)

    2009-11-15

    The electrodeposition at room temperature of silicon and germanium nanowires from the air- and water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide (P{sub 1,4}) containing SiCl{sub 4} as Si source or GeCl{sub 4} as Ge source is investigated by cyclic voltammetry. By using nanoporous polycarbonate membranes as templates, it is possible to reproducibly grow pure silicon and germanium nanowires of different diameters. The nanowires are composed of pure amorphous silicon or germanium. The nanowires have homogeneous cylindrical shape with a roughness of a few nanometres on the wire surfaces. The nanowires' diameters and lengths well match with the initial membrane characteristics. Preliminary photoluminescence experiments exhibit strong emission in the near infrared for the amorphous silicon nanowires.

  19. Driver-Array Based Flat-Panel Loudspeakers: Theoretical Background and Design Guidelines

    Science.gov (United States)

    Anderson, David Allan

    This thesis relates to the simulation and design of flat-panel loudspeakers using moving-coil driver elements. A brief history of the industry is given, including a collection of products and patents from 1925 until the present, an overview of research papers, and a discussion of current products available. The mechanics of bending flat panels are developed with respect to localized driving forces, both in the frequency domain and the time domain as an impulse response. These simulations are compared to measurements on prototype panels. Additional resonant elements influence the behavior of the system: an optional ported rear enclosure and the resonant characteristics of the drivers. The governing equations for these systems are derived and solutions are implemented using equivalent mechanical circuits and numerical methods. The idea of using driver arrays to independently actuate modes of the panel is discussed at length with respect to modal addressability, modal spillover, and experimental validation. The numerical approach to determining the optimal driver placement for a given set of modes is derived and experimentally validated. An investigation of the acoustic behavior of flat panel loudspeakers is presented, using mechanical simulation results to predict the acoustic radiation. The simulations are compared to measurements and found to accurately predict important mechanical and acoustical behaviors. It is demonstrated that a driver array, with the proper biasing, is capable of creating a flat panel loudspeaker which acts more like a piston than a "diffuse radiator" flat panel loudspeaker. The techniques of "Modal Crossover Networks" are introduced, which use multi-band filters to bias the driver array differently for different frequency bands, optimized for audio reproduction. The question of how many drivers are necessary for a modal crossover network is addressed and found to be dependent on the estimated quality factor (Q) of the panel material and edge

  20. Proton irradiation effects of amorphous silicon solar cell for solar power satellite

    Energy Technology Data Exchange (ETDEWEB)

    Morita, Yousuke; Oshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Sasaki, Susumu; Kuroda, Hideo; Ushirokawa, Akio

    1997-03-01

    Flexible amorphous silicon(fa-Si) solar cell module, a thin film type, is regarded as a realistic power generator for solar power satellite. The radiation resistance of fa-Si cells was investigated by the irradiations of 3,4 and 10 MeV protons. The hydrogen gas treatment of the irradiated fa-Si cells was also studied. The fa-Si cell shows high radiation resistance for proton irradiations, compared with a crystalline silicon solar cell. (author)

  1. Amorphous silicon-carbon based nano-scale thin film anode materials for lithium ion batteries

    International Nuclear Information System (INIS)

    Datta, Moni Kanchan; Maranchi, Jeffrey; Chung, Sung Jae; Epur, Rigved; Kadakia, Karan; Jampani, Prashanth; Kumta, Prashant N.

    2011-01-01

    Research highlights: → Thin film amorphous C/Si. Good cycling response validates carbon matrix for Silicon anodes. → Thin film amorphous C/Si/C. Good cycling response validates carbon as an interface and matrix. - Abstract: The buffering effect of carbon on the structural stability of amorphous silicon films, used as an anode for lithium ion rechargeable batteries, has been studied during long term discharge/charge cycles. To this extent, the electrochemical performance of a prototype material consisting of amorphous Si thin film (∼250 nm) deposited by radio frequency magnetron sputtering on amorphous carbon (∼50 nm) thin films, denoted as a-C/Si, has been investigated. In comparison to pure amorphous Si thin film (a-Si) which shows a rapid fade in capacity after 30 cycles, the a-C/Si exhibits excellent capacity retention displaying ∼0.03% fade in capacity up to 50 cycles and ∼0.2% after 50 cycles when cycled at a rate of 100 μA/cm 2 (∼C/2) suggesting that the presence of thin amorphous C layer deposited between the Cu substrate and a-Si acts as a buffer layer facilitating the release of the volume induced stresses exhibited by pure a-Si during the charge/discharge cycles. This structural integrity combined with microstructural stability of the a-C/Si thin film during the alloying/dealloying process with lithium has been confirmed by scanning electron microscopy (SEM) analysis. The buffering capacity of the thin amorphous carbon layer lends credence to its use as the likely compliant matrix to curtail the volume expansion related cracking of silicon validating its choice as the matrix for bulk and thin film battery systems.

  2. Digital radiography of the skeleton using a large-area detector based on amorphous silicon technology: Image quality and potential for dose reduction in comparison with screen-film radiography

    International Nuclear Information System (INIS)

    Volk, M.; Strotzer, M.; Holzkneckt, N.; Manke, C.; Lenhart, M.; Gmeinwieser, J.; Link, J.; Reiser, M.; Feuerback, S.

    2000-01-01

    AIM: The purpose of this study was to evaluate a large-area, flat-panel X-ray detector (FD), based on caesium-iodide (CsI) and amorphous silicon (a-Si) with respect to skeletal radiography. Conventional images were compared with digital radiographs using identical and reduced radiation doses. MATERIALS AND METHODS: Thirty consecutive patients were studied prospectively using conventional screen-film radiography (SFR; detector dose 2.5 μGy). Digital images were taken from the same patients with detector doses of 2.5, 1.25 and 0.625 μGy, respectively. The active-matrix detector had a panel size of 43 x 43 cm, a matrix of 3 x 3K, and a pixel size of 143 μm. All hard copies were presented in a random order to eight independent observers, who rated image quality according to subjective quality criteria. Results were assessed for significance using the Student's t -test (confidence level 95%). RESULTS: A statistically significant preference for digital over conventional images was revealed for all quality criteria, except for over-exposure (detector dose 2.5 μGy). Digital images with a 50% dose showed a small, statistically not significant, inferiority compared with SFR. The FD-technique was significantly inferior to SFR at 75% dose reduction regarding bone cortex and trabecula, contrast and overall impression. No statistically significant differences were found with regard to over- and under-exposure and soft tissue presentation. CONCLUSION: Amorphous silicon-based digital radiography yields good image quality. The potential for dose reduction depends on the clinical query. Volk, M. (2000)

  3. Multipoint alignment monitoring with amorphous silicon position detectors in a complex light path

    International Nuclear Information System (INIS)

    Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L.

    2010-01-01

    This document presents an application of the new generation of amorphous silicon position detecting (ASPD) sensors to multipoint alignment. Twelve units are monitored along a 20 m long laser beam, where the light path is deflected by 90 o using a pentaprism.

  4. Results from multipoint alignment monitoring using the new generation of amorphous silicon position detectors

    International Nuclear Information System (INIS)

    Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L.

    2008-01-01

    We present the measured performance of a new generation of large sensitive area (28x28 mm 2 ) semitransparent amorphous silicon position detector sensors. More than 100 units have been characterized. They show a very high performance. To illustrate a multipoint application, we present results from the monitoring of five sensors placed in a 5.5-m-long light path

  5. Amorphous Silicon Position Detectors for the Link Alignment System of the CMS Detector: Users Handbook

    International Nuclear Information System (INIS)

    Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F. J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Scodellaro, L.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

    2007-01-01

    We present the general characteristics, calibration procedures and measured performance of the Amorphous Silicon Position Detectors installed in the Link Alignment System of the CMS Detector for laser beam detection and reconstruction and give the Data Base to be used as a Handbook during CMS operation. (Author) 10 refs

  6. Preparation and Characterisation of Amorphous-silicon Photovoltaic Devices Having Microcrystalline Emitters

    International Nuclear Information System (INIS)

    Gutierrez, M. T.; Gandia, J. J.; Carabe, J.

    1999-01-01

    The present work summarises the essential aspects of the research carried out so far at CIEMAT on amorphous-silicon solar cells. The experience accumulated on the preparation and characterisation of amorphous and microcrystalline silicon has allowed to start from intrinsic (absorbent) and p- and n-type (emitters) materials not only having excellent optoelectronic properties, but enjoying certain technological advantages with respect to those developed by other groups. Among these are absorbent-layer growth rates between 5 and 10 times as fast as conventional ones and microcrystalline emitters prepared without using hydrogen. The preparation of amorphous-silicon cells has required the solution of a number of problems, such as those related to pinholes, edge leak currents and diffusion of metals into the semiconductor. Once such constraints have been overcome, it has been demonstrated not only that the amorphous-silicon technology developed at CIEMAT is valid for making solar cells, but also that the quality of the semiconductor material is good for the application according to the partial results obtained. The development of thin-film laser-scribing technology is considered essential. Additionally it has been concluded that cross contamination, originated by the fact of using a single-chamber reactor, is the basic factor limiting the quality of the cells developed at CIEMAT. The present research activity is highly focused on the solution of this problem. (Author)23 refs

  7. A comparison of degradation in three amorphous silicon PV module technologies

    Energy Technology Data Exchange (ETDEWEB)

    Radue, C.; van Dyk, E.E. [Physics Department, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2010-03-15

    Three commercial amorphous silicon modules manufactured by monolithic integration and consisting of three technology types were analysed in this study. These modules were deployed outdoors for 14 months and underwent degradation. All three modules experienced the typical light-induced degradation (LID) described by the Staebler-Wronski effect, and this was followed by further degradation. A 14 W single junction amorphous silicon module degraded by about 45% of the initial measured maximum power output (P{sub MAX}) at the end of the study. A maximum of 30% of this has been attributed to LID and the further 15% to cell mismatch and cell degradation. The other two modules, a 64 W triple junction amorphous silicon module, and a 68 W flexible triple junction amorphous silicon module, exhibited LID followed by seasonal variation in the degraded P{sub MAX}. The 64 W module showed a maximum degradation in P{sub MAX} of about 22%. This is approximately 4% more than the manufacturer allowed for the initial LID. However, the seasonal variation in P{sub MAX} seems to be centred around the manufacturer's rating ({+-}4%). The 68 W flexible module has shown a maximum decrease in P{sub MAX} of about 27%. This decrease is about 17% greater than the manufacturer allowed for the initial LID. (author)

  8. Amorphous Silicon Position Detectors for the Link Alignment System of the CMS Detector: Users Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F. J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Scodellaro, L.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

    2007-07-01

    We present the general characteristics, calibration procedures and measured performance of the Amorphous Silicon Position Detectors installed in the Link Alignment System of the CMS Detector for laser beam detection and reconstruction and give the Data Base to be used as a Handbook during CMS operation. (Author) 10 refs.

  9. Defects study of hydrogenated amorphous silicon samples and their relation with the substrate and deposition conditions

    International Nuclear Information System (INIS)

    Darwich, R.

    2009-07-01

    The goal of this work is to study the properties of the defects aiming to explore the types of defects and the effect of various deposition parameters such as substrate temperature, the kind of the substrate, gas pressure and deposition rate. Two kinds of samples have been used; The first one was a series of Schottky diodes, and the second one a series of solar cells (p-i-n junction) deposited on crystalline silicon or on corning glass substrates with different deposition parameters. The deposition parameters were chosen to obtain materials whose their structures varying from amorphous to microcrystalline silicon including polymorphous silicon. Our results show that the polymorphous silicon samples deposited at high deposition rates present the best photovoltaic properties in comparison with those deposited at low rates. Also we found that the defects concentration in high deposition rate samples is less at least by two orders than that obtained in low deposition rate polymorphous, microcrystalline and amorphous samples. This study shows also that there is no effect of the substrate, or the thin films of highly doped amorphous silicon deposited on the substrate, on the creation and properties of these defects. Finally, different experimental methods have been used; a comparison between their results has been presented. (author)

  10. Crystalline-Amorphous Core−Shell Silicon Nanowires for High Capacity and High Current Battery Electrodes

    KAUST Repository

    Cui, Li-Feng

    2009-01-14

    Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon\\'s large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline- amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li ions. We demonstrate here that these core-shell nanowires have high charge storage capacity (̃1000 mAh/g, 3 times of carbon) with ̃90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, ̃20 times of carbon at 1 h rate). © 2009 American Chemical Society.

  11. AMORPHOUS SILICON ELECTRONIC STRUCTURE MODELING AND BASIC ELECTRO-PHYSICAL PARAMETERS CALCULATION

    Directory of Open Access Journals (Sweden)

    B. A. Golodenko

    2014-01-01

    Full Text Available Summary. The amorphous semiconductor has any unique processing characteristics and it is perspective material for electronic engineering. However, we have not authentic information about they atomic structure and it is essential knot for execution calculation they electronic states and electro physical properties. The author's methods give to us decision such problem. This method allowed to calculation the amorphous silicon modeling cluster atomics Cartesian coordinates, determined spectrum and density its electronic states and calculation the basics electro physical properties of the modeling cluster. At that determined numerical means of the energy gap, energy Fermi, electron concentration inside valence and conduction band for modeling cluster. The find results provides real ability for purposeful control to type and amorphous semiconductor charge carriers concentration and else provides relation between atomic construction and other amorphous substance physical properties, for example, heat capacity, magnetic susceptibility and other thermodynamic sizes.

  12. Low-cost modular array-field designs for flat-panel and concentrator photovoltaic systems

    Science.gov (United States)

    Post, H. N.; Carmichael, D. C.; Alexander, G.; Castle, J. A.

    1982-09-01

    Described are the design and development of low-cost, modular array fields for flat-panel and concentrator photovoltaic (PV) systems. The objective of the work was to reduce substantially the cost of the array-field Balance-of-System (BOS) subsystems and site-specific design costs as compared to previous PV installations. These subsystems include site preparation, foundations, support structures, electrical writing, grounding, lightning protection, electromagnetic interference considerations, and controls. To reduce these BOS and design costs, standardized modular (building-block) designs for flat-panel and concentrator array fields have been developed that are fully integrated and optimized for lowest life-cycle costs. Using drawings and specifications now available, these building-block designs can be used in multiples to install various size array fields. The developed designs are immediately applicable (1982) and reduce the array-field BOS costs to a fraction of previous costs.

  13. Full dynamic resolution low lower DA-Converters for flat panel displays

    Directory of Open Access Journals (Sweden)

    C. Saas

    2006-01-01

    Full Text Available It has been shown that stepwise charging can reduce the power dissipated in the source drivers of a flat panel display. However the solution presented only provided a dynamic resolution of 3 bits which is not sufficient for obtaining a full color resolution display. In this work a further development of the basic idea is presented. The stepwise charging is increased to 4 bits and supplemented by a current source to provide an output signal which represents an 8 bit value with sufficient accuracy. Within this work the application is an AM-OLED flat panel display, but the concept can easily be applied to other display technologies like TFT-LCD as well.

  14. Qualification test results for DOE solar photovoltaic flat panel procurement - PRDA 38

    Science.gov (United States)

    Griffith, J. S.

    1980-01-01

    Twelve types of prototypes modules for the DOE Photovoltaic Flat Panel Procurement (PRDA 38) were subjected to qualification tests at the Jet Propulsion Laboratory according to a new specification. Environmental exposures were carried out separately and included temperature cycling, humidity, wind simulation, and hail. The most serious problems discovered were reduced insulation resistance to ground and ground continuity of the metal frames, electrical degradation, erratic power readings, and delamination. The electrical and physical characteristics of the newly received modules are also given.

  15. High-performance flat-panel solar thermoelectric generators with high thermal concentration.

    Science.gov (United States)

    Kraemer, Daniel; Poudel, Bed; Feng, Hsien-Ping; Caylor, J Christopher; Yu, Bo; Yan, Xiao; Ma, Yi; Wang, Xiaowei; Wang, Dezhi; Muto, Andrew; McEnaney, Kenneth; Chiesa, Matteo; Ren, Zhifeng; Chen, Gang

    2011-05-01

    The conversion of sunlight into electricity has been dominated by photovoltaic and solar thermal power generation. Photovoltaic cells are deployed widely, mostly as flat panels, whereas solar thermal electricity generation relying on optical concentrators and mechanical heat engines is only seen in large-scale power plants. Here we demonstrate a promising flat-panel solar thermal to electric power conversion technology based on the Seebeck effect and high thermal concentration, thus enabling wider applications. The developed solar thermoelectric generators (STEGs) achieved a peak efficiency of 4.6% under AM1.5G (1 kW m(-2)) conditions. The efficiency is 7-8 times higher than the previously reported best value for a flat-panel STEG, and is enabled by the use of high-performance nanostructured thermoelectric materials and spectrally-selective solar absorbers in an innovative design that exploits high thermal concentration in an evacuated environment. Our work opens up a promising new approach which has the potential to achieve cost-effective conversion of solar energy into electricity. © 2011 Macmillan Publishers Limited. All rights reserved

  16. Portable low-cost flat panel detectors for real-time digital radiography

    Energy Technology Data Exchange (ETDEWEB)

    Iovea, Mihai; Neagu, Marian; Stefanescu, Bogdan; Mateiasi, Gabriela; Porosnicu, Ioana; Angheluta, Elena [Accent Pro 2000 S.R.L., Bucharest (Romania)

    2015-07-01

    The X-ray inspection is one of the most common used non-destructive testing methods in industry applications, but for the portable X-ray digital solution are not so many accessible, low-cost and versatile detection devices. The efficiency of a non-destructive X-ray portable device is represented by the quality of digital images, by its low acquisition time combined with a high resolution, in condition of low noise and at an affordable cost. The paper presents two X-ray portable imaging systems developed by us, suitable also for aerospace NDT applications, which are also very versatile for being easily adapted for other fields that requires mobile solutions. The first device described in the paper represent a portable large-size (210 mm X 550 mm) and high-resolution (27/54 microns) flat panel detector based on linear translation of a X-Ray TDI detector, destined for various components/parts real-time transmission measurements. The second system it is also a flat panel detectors, with a size of 510 mm X 610 mm, with the detector size from 0.2 mm until 1.5 mm, which can operate by applying the dual-energy method, very useful for discriminating materials by evaluating their Atomic effective number. The high resolution and low-cost of this flat-panels widens their applicability by covering large requirements, from identifying unwanted materials within a structure until detection of very thin cracks in complex components.

  17. Tracking brachytherapy sources using emission imaging with one flat panel detector

    International Nuclear Information System (INIS)

    Song Haijun; Bowsher, James; Das, Shiva; Yin Fangfang

    2009-01-01

    This work proposes to use the radiation from brachytherapy sources to track their dwell positions in three-dimensional (3D) space. The prototype device uses a single flat panel detector and a BB tray. The BBs are arranged in a defined pattern. The shadow of the BBs on the flat panel is analyzed to derive the 3D coordinates of the illumination source, i.e., the dwell position of the brachytherapy source. A kilovoltage x-ray source located 3.3 m away was used to align the center BB with the center pixel on the flat panel detector. For a test plan of 11 dwell positions, with an Ir-192 high dose rate unit, one projection was taken for each dwell point, and locations of the BB shadows were manually identified on the projection images. The 3D coordinates for the 11 dwell positions were reconstructed based on two BBs. The distances between dwell points were compared with the expected values. The average difference was 0.07 cm with a standard deviation of 0.15 cm. With automated BB shadow recognition in the future, this technique possesses the potential of tracking the 3D trajectory and the dwell times of a brachytherapy source in real time, enabling real time source position verification.

  18. Preliminary performance of image quality for a low-dose C-arm CT system with a flat-panel detector

    Energy Technology Data Exchange (ETDEWEB)

    Kyung Cha, Bo [Advanced Medical Device Research Center, Korea Electrotechnology Research Institute, Ansan (Korea, Republic of); Seo, Chang-Woo [Department of Radiation Convergence Engineering, College of Health Science, Yonsei University, Wonju (Korea, Republic of); Yang, Keedong [Advanced Medical Device Research Center, Korea Electrotechnology Research Institute, Ansan (Korea, Republic of); Jeon, Seongchae, E-mail: sarim@keri.re.kr [Advanced Medical Device Research Center, Korea Electrotechnology Research Institute, Ansan (Korea, Republic of); Huh, Young [Advanced Medical Device Research Center, Korea Electrotechnology Research Institute, Ansan (Korea, Republic of)

    2015-06-01

    Digital flat panel imager (FPI)-based cone-beam computed tomography (CBCT) has been widely used in C-arm imaging for spine surgery and interventional procedures. The system provides real-time fluoroscopy with high spatial resolution and three-dimensional (3D) visualization of anatomical structure without the need for patient transportation in interventional suite. In this work, a prototype CBCT imaging platform with continuous single rotation about the gantry was developed by using a large-area flat-panel detector with amorphous Si-based thin film transistor matrix. The different 2D projection images were acquired during constant gantry velocity for reconstructed images at a tube voltage of 80–120 kVp, and different current (10–50 mA) conditions. Various scan protocols were applied to a chest phantom human by changing the number of projection images and scanning angles. The projections were then reconstructed into a volumetric data of sections by using a 3D reconstruction algorithm (e.g., filtered back projection). The preliminary quantitative X-ray performance of our CBCT system was investigated by using the American Association of Physicists in Medicine CT phantom in terms of spatial resolution, contrast resolution, and CT number linearity for mobile or fixed C-arm based CBCT application with limited rotational geometry. The novel results of the projection data with different scanning angles and angular increments in the orbital gantry platform were acquired and evaluated experimentally.

  19. Dielectric relaxation and hydrogen diffusion in amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, J.C. (AT and T Bell Labs., Murray Hill, NJ (United States))

    1994-04-01

    Hydrogen diffusion is technologically critical to the processing of amorphous Si for solar cell applications. It is shown that this diffusion belongs to a broad class of dielectric relaxation mechanisms which were first studied by Kohlrausch in 1847. A microscopic theory of the Kohlrausch relaxation constant [beta][sub K] is also constructed. This theory explains the values of [beta] observed in many electronic, molecular and polymeric relaxation processes. It is based on two novel concepts: Wiener sausages, from statistical mechanics, and the magic wand, from axiomatic set theory

  20. Crystalline-amorphous core-shell silicon nanowires for high capacity and high current battery electrodes.

    Science.gov (United States)

    Cui, Li-Feng; Ruffo, Riccardo; Chan, Candace K; Peng, Hailin; Cui, Yi

    2009-01-01

    Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon's large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline-amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li(+) ions. We demonstrate here that these core-shell nanowires have high charge storage capacity ( approximately 1000 mAh/g, 3 times of carbon) with approximately 90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, approximately 20 times of carbon at 1 h rate).

  1. An amorphous silicon photodiode with 2 THz gain-bandwidth product based on cycling excitation process

    Science.gov (United States)

    Yan, Lujiang; Yu, Yugang; Zhang, Alex Ce; Hall, David; Niaz, Iftikhar Ahmad; Raihan Miah, Mohammad Abu; Liu, Yu-Hsin; Lo, Yu-Hwa

    2017-09-01

    Since impact ionization was observed in semiconductors over half a century ago, avalanche photodiodes (APDs) using impact ionization in a fashion of chain reaction have been the most sensitive semiconductor photodetectors. However, APDs have relatively high excess noise, a limited gain-bandwidth product, and high operation voltage, presenting a need for alternative signal amplification mechanisms of superior properties. As an amplification mechanism, the cycling excitation process (CEP) was recently reported in a silicon p-n junction with subtle control and balance of the impurity levels and profiles. Realizing that CEP effect depends on Auger excitation involving localized states, we made the counter intuitive hypothesis that disordered materials, such as amorphous silicon, with their abundant localized states, can produce strong CEP effects with high gain and speed at low noise, despite their extremely low mobility and large number of defects. Here, we demonstrate an amorphous silicon low noise photodiode with gain-bandwidth product of over 2 THz, based on a very simple structure. This work will impact a wide range of applications involving optical detection because amorphous silicon, as the primary gain medium, is a low-cost, easy-to-process material that can be formed on many kinds of rigid or flexible substrates.

  2. Spatially localized current-induced crystallization of amorphous silicon films

    Czech Academy of Sciences Publication Activity Database

    Rezek, Bohuslav; Šípek, Emil; Ledinský, Martin; Krejza, P.; Stuchlík, Jiří; Fejfar, Antonín; Kočka, Jan

    2008-01-01

    Roč. 354, 19-25 (2008), s. 2305-2309 ISSN 0022-3093 R&D Projects: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : silicon * crystallization * atomic force and scanning tunneling microscopy * nanocrystals Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.449, year: 2008

  3. Simulation of the growth dynamics of amorphous and microcrystalline silicon

    OpenAIRE

    Bailat, Julien; Vallat-Sauvain, Evelyne; Vallat, A.; Shah, Arvind

    2008-01-01

    The qualitative description of the major microstructure characteristics of microcrystalline silicon is achieved through a three-dimensional discrete dynamical growth model. The model is based on three fundamental processes that determine surface morphology: (1) random deposition of particles, (2) local relaxation and (3) desorption. In this model, the incoming particle reaching the growing surface takes on a state variable representing a particular way of being incorporated into the material....

  4. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    International Nuclear Information System (INIS)

    Li, Da; Kunz, Thomas; Wolf, Nadine; Liebig, Jan Philipp; Wittmann, Stephan; Ahmad, Taimoor; Hessmann, Maik T.; Auer, Richard; Göken, Mathias; Brabec, Christoph J.

    2015-01-01

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm 2 aperture area on the graphite substrate. The optical properties of the SiN x /a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiN x /a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiN x /a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance

  5. Thermal conductivity of amorphous and nanocrystalline silicon films prepared by hot-wire chemical-vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jugdersuren, B.; Kearney, B. T.; Queen, D. R.; Metcalf, T. H.; Culbertson, J. C.; Chervin, C. N.; Stroud, R. M.; Nemeth, W.; Wang, Q.; Liu, Xiao

    2017-07-01

    We report 3..omega.. thermal conductivity measurements of amorphous and nanocrystalline silicon thin films from 85 to 300 K prepared by hot-wire chemical-vapor deposition, where the crystallinity of the films is controlled by the hydrogen dilution during growth. The thermal conductivity of the amorphous silicon film is in agreement with several previous reports of amorphous silicon prepared by a variety of deposition techniques. The thermal conductivity of the as-grown nanocrystalline silicon film is 70% higher and increases 35% more after an anneal at 600 degrees C. They all have similarly weak temperature dependence. Structural analysis shows that the as-grown nanocrystalline silicon is approximately 60% crystalline, nanograins and grain boundaries included. The nanograins, averaging 9.1 nm in diameter in the as-grown film, are embedded in an amorphous matrix. The grain size increases to 9.7 nm upon annealing, accompanied by the disappearance of the amorphous phase. We extend the models of grain boundary scattering of phonons with two different non-Debye dispersion relations to explain our result of nanocrystalline silicon, confirming the strong grain size dependence of heat transport for nanocrystalline materials. However, the similarity in thermal conductivity between amorphous and nanocrystalline silicon suggests the heat transport mechanisms in both structures may not be as dissimilar as we currently understand.

  6. In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy

    CERN Document Server

    Kessels, W M M; Sanden, M C M; Aydil, E S

    2002-01-01

    An in situ method based on attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) is presented for detecting surface silicon hydrides on plasma deposited hydrogenated amorphous silicon (a-Si:H) films and for determining their surface concentrations. Surface silicon hydrides are desorbed by exposing the a-Si:H films to low energy ions from a low density Ar plasma and by comparing the infrared spectrum before and after this low energy ion bombardment, the absorptions by surface hydrides can sensitively be separated from absorptions by bulk hydrides incorporated into the film. An experimental comparison with other methods that utilize isotope exchange of the surface hydrogen with deuterium showed good agreement and the advantages and disadvantages of the different methods are discussed. Furthermore, the determination of the composition of the surface hydrogen bondings on the basis of the literature data on hydrogenated crystalline silicon surfaces is presented, and quantification of the h...

  7. Enhanced photoluminescence from ring resonators in hydrogenated amorphous silicon thin films at telecommunications wavelengths.

    Science.gov (United States)

    Patton, Ryan J; Wood, Michael G; Reano, Ronald M

    2017-11-01

    We report enhanced photoluminescence in the telecommunications wavelength range in ring resonators patterned in hydrogenated amorphous silicon thin films deposited via low-temperature plasma enhanced chemical vapor deposition. The thin films exhibit broadband photoluminescence that is enhanced by up to 5 dB by the resonant modes of the ring resonators due to the Purcell effect. Ellipsometry measurements of the thin films show a refractive index comparable to crystalline silicon and an extinction coefficient on the order of 0.001 from 1300 nm to 1600 nm wavelengths. The results are promising for chip-scale integrated optical light sources.

  8. Boron profiles in doped amorphous-silicon solar cells formed by plasma ion deposition

    International Nuclear Information System (INIS)

    Stoddart, C.T.H.; Hunt, C.P.; Coleman, J.H.

    1979-01-01

    Amorphous silicon p-n junction solar cells of large area (100 cm 2 ) and having a quantum efficiency approaching 100% in the blue region have been prepared by plasma ion-plating, the p layer being formed from diborane and silane gases in a cathode glow-discharge. Surface secondary ion mass spectrometry combined with ion beam etching was found to be a very sensitive method with high in-depth resolution for obtaining the initial boron-silicon profile of the solar cell p-n junction. (author)

  9. Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

    Energy Technology Data Exchange (ETDEWEB)

    Munoz, D. [XaRMAE-Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Diagonal 647, Barcelona 08028 (Spain)], E-mail: delfina@eel.upc.edu; Voz, C.; Blanque, S. [Universitat Politecnica de Catalunya, Grup de Recerca en Micro i Nanotecnologies, Jordi Girona 1-3, Barcelona 08034 (Spain); Ibarz, D.; Bertomeu, J. [XaRMAE-Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Diagonal 647, Barcelona 08028 (Spain); Alcubilla, R. [Universitat Politecnica de Catalunya, Grup de Recerca en Micro i Nanotecnologies, Jordi Girona 1-3, Barcelona 08034 (Spain)

    2009-03-15

    In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances ({rho}{sub c} {approx} 10 m{omega} cm{sup 2}) have been obtained on 2.8 {omega} cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.

  10. Simulation of localized surface plasmon in metallic nanoparticles embedded in amorphous silicon

    Science.gov (United States)

    Fantoni, A.; Fernandes, M.; Vygranenko, Y.; Louro, P.; Vieira, M.; Texeira, D.; Ribeiro, A.; Alegria, E.

    2017-08-01

    We propose the development and realization of a plasmonic structure based on the LSP interaction of metal nanoparticles with an embedding matrix of amorphous silicon. This structure need to be usable as the basis for a sensor device applied in biomedical applications, after proper functionalization with selective antibodies. The final sensor structure needs to be low cost, compact and disposable. The study reported in this paper aims to analyze different materials for nanoparticles and embedding medium composition. Metals of interest for nanoparticles composition are Aluminum, Gold and Alumina. As a preliminary approach to this device, we study in this work the optical properties of metal nanoparticles embedded in an amorphous silicon matrix, as a function of size, aspect-ratio and metal type. Following an analysis based on the exact solution of the Mie theory, experimental measurements realized with arrays of metal nanoparticles are compared with the simulations.

  11. Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

    International Nuclear Information System (INIS)

    Munoz, D.; Voz, C.; Blanque, S.; Ibarz, D.; Bertomeu, J.; Alcubilla, R.

    2009-01-01

    In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances (ρ c ∼ 10 mΩ cm 2 ) have been obtained on 2.8 Ω cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.

  12. Photodecomposition of Hg - Photo - CVD monosilane. Application to hydrogenated amorphous silicon thin films

    International Nuclear Information System (INIS)

    Aka, B.

    1989-04-01

    The construction of a Hg-photo-CVD device is discussed. The system enables the manufacturing of hydrogenous thin films of amorphous silicon from monosilane compound. The reaction mechanisms taking place in the gaseous phase and at the surface, and the optimal conditions for the amorphous silicon film growth are studied. The analysis technique is based on the measurement of the difference between the condensation points of the gaseous components of the mixture obtained from the monosilane photolysis. A kinetic simplified model is proposed. Conductivity measurements are performed and the heat treatment effects are analyzed. Trace amounts of oxygen and carbon are found in the material. No Hg traces are detected by SIMS analysis [fr

  13. Ion-beam doping of amorphous silicon with germanium isovalent impurity

    International Nuclear Information System (INIS)

    Khokhlov, A.F.; Mashin, A.I.; Ershov, A.V.; Mashin, N.I.; Ignat'eva, E.A.

    1988-01-01

    Experimental data on ion-beam doping of amorphous silicon containing minor germanium additions by donor and acceptor impurity are presented. Doping of a-Si:Ge films as well as of a-Si layers was performed by implantation of 40 keV energy B + ions or 120 keV energy phosphorus by doses from 3.2x10 13 up to 1.3x10 17 cm -2 . Ion current density did not exceed 1 μA/cm 2 . Radiation defect annealing was performed at 400 deg C temperature during 30 min. Temperature dependences of conductivity in the region of 160-500 K were studied. It is shown that a-Si:Ge is like hydrogenized amorphous silicon in relation to doping

  14. Thermal stability of hot-wire deposited amorphous silicon

    CSIR Research Space (South Africa)

    Arendse, CJ

    2006-04-01

    Full Text Available the solar cells may also be exposed to temperature cycling over a wide range of 2. Experimental details The a-Si:H sample was deposited simultaneously on single-side polished <100> crystalline silicon (c-Si) and Corning 7059 substrates by the hot... change in the defect structure is observed, caused by y clustering at 400 -C, caused by the alignment of unterminated , concentration or both. Raman scattering shows evidence that no s upon annealing. ) 92 – 94 www.elsevier.com/locate/tsf nitrogen...

  15. Large-size high-performance transparent amorphous silicon sensors for laser beam position detection

    International Nuclear Information System (INIS)

    Calderon, A.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto, A.L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Luque, J.M.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Koehler, C.; Lutz, B.; Schubert, M.B.; Werner, J.H.

    2006-01-01

    We present the measured performance of a new generation of semitransparent amorphous silicon position detectors. They have a large sensitive area (30x30mm 2 ) and show good properties such as a high response (about 20mA/W), an intrinsic position resolution better than 3μm, a spatial-point reconstruction precision better than 10μm, deflection angles smaller than 10μrad and a transmission power in the visible and NIR higher than 70%

  16. First Measurements of the Performance of New Semitransparent Amorphous Silicon Sensor Prototypes

    International Nuclear Information System (INIS)

    Calderon, A.; Calvo, E.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J. M.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

    2004-01-01

    We present first results on the performance of a new generation of semitransparent amorphous silicon position detectors having good properties such as an intrinsic position resolution better than 5μm, an spatial point reconstruction precision better than 10 μm, deflection angles smaller than 10μrad and transmission in the visible and NIR higher than 70%. In addition the sensitive area is very large: 30x30 cm 3 . (Author) 10 refs

  17. Results on photon and neutron irradiation of semitransparent amorphous-silicon sensors

    CERN Document Server

    Carabe, J; Ferrando, A; Fuentes, J; Gandia, J J; Josa-Mutuberria, I; Molinero, A; Oller, J C; Arce, P; Calvo, E; Figueroa, C F; García, N; Matorras, F; Rodrigo, T; Vila, I; Virto, A L; Fenyvesi, A; Molnár, J; Sohler, D

    2000-01-01

    Semitransparent amorphous-silicon sensors are basic elements for laser 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in a very hard radiation environment. Two different sensor types have been irradiated with /sup 60/Co photons (up to 100 kGy) and fast neutrons (up to 10/sup 15 / cm/sup -2/), and the subsequent change in their performance has been measured. (13 refs).

  18. Observation of correlation effects in the hopping transport in amorphous silicon

    International Nuclear Information System (INIS)

    Voegele, V.; Kalbitzer, S.; Boehringer, K.

    1985-01-01

    Amorphous silicon films have been modified by the implantation of Au or Si ions. The d.c. conductivity, measured between 300 and 15 K, was found to exhibit hopping exponents m which increase with decreasing temperature. Depending on the varied defect densities, m ranges between the limits of 1/4 and 1. These results can be explained by variable-range-hopping theory, if a Coulomb correlation term is included. (author)

  19. Three-dimensional amorphous silicon solar cells on periodically ordered ZnO nanocolumns

    Czech Academy of Sciences Publication Activity Database

    Neykova, Neda; Moulin, E.; Campa, A.; Hruška, Karel; Poruba, Aleš; Stückelberger, M.; Haug, F.J.; Topič, M.; Ballif, C.; Vaněček, Milan

    2015-01-01

    Roč. 212, č. 8 (2015), s. 1823-1829 ISSN 1862-6300 R&D Projects: GA MŠk 7E12029; GA ČR(CZ) GA14-05053S EU Projects: European Commission(XE) 283501 - FAST TRACK Institutional support: RVO:68378271 Keywords : amorphous materials * hydrothermal growth * nanostructures * silicon * solar cells * ZnO Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.648, year: 2015

  20. Effect of deposition and annealing conditions on the optical properties of amorphous silicon

    International Nuclear Information System (INIS)

    Mashin, A.I.; Ershov, A.V.; Khokhlov, D.A.

    1998-01-01

    The spectral characteristics of the refractive index and the extinction coefficient in the range 0.6-2.0 eV for amorphous silicon films prepared by electron-beam evaporation with variation of the substrate temperature, deposition rate, and annealing temperature in air are presented. The results obtained are discussed on the basis of the changes in the Penn gap energy as a function of the indicated preparation and treatment conditions

  1. Simulating liquid and amorphous silicon dioxide using real-space pseudopotentials

    Science.gov (United States)

    Kim, Minjung; Khoo, K. H.; Chelikowsky, James R.

    2012-08-01

    We present ab initio molecular dynamics simulations of liquid and amorphous silicon dioxide. The interatomic forces in our simulations are calculated using real-space pseudopotentials, which were constructed using density-functional theory. Our simulations are carried out using Born-Oppenheimer molecular dynamics (i.e., the electronic structure problem is solved by performing fully self-consistent calculations for each time step). Using a subspace filtering iteration technique, we avoid solving the Kohn-Sham eigenvalue with “standard” diagonalization methods. We consider systems with up to 192 atoms (64 SiO2 units) in a periodic supercell for simulations over 20 ps. The liquid and amorphous ensembles are formed by thermally quenching random configurations of silicon and oxygen atoms. We compare our liquid and amorphous simulations with previously performed Car-Parrinello molecular dynamic simulations and with experiment. In particular, we examine the possible formation of two-membered rings, which were not observed in previous simulations using quantum forces. We attribute this difference to a “biased” initial configuration, which inhibits the formation of two-membered rings. We also compare the structural properties of our simulated amorphous systems with neutron diffraction measurements and find good agreement.

  2. Control of single-electron charging of metallic nanoparticles onto amorphous silicon surface.

    Science.gov (United States)

    Weis, Martin; Gmucová, Katarína; Nádazdy, Vojtech; Capek, Ignác; Satka, Alexander; Kopáni, Martin; Cirák, Július; Majková, Eva

    2008-11-01

    Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film is reported. Single-electron charging (so-called quantized double-layer charging) of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the electric field in the surface region induced by the excess of negative/positive charged defect states in the amorphous silicon layer. The particular charge states in amorphous silicon are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. The influence of charged states on the electric field in the surface region is evaluated by the finite element method. The single-electron charging is analyzed by the standard quantized double layer model as well as two weak-link junctions model. Both approaches are in accordance with experiment and confirm single-electron charging by tunnelling process at room temperature. This experiment illustrates the possibility of the creation of a voltage-controlled capacitor for nanotechnology.

  3. On magnetic ordering in silicon made amorphous by ion implantation

    International Nuclear Information System (INIS)

    Khokhlov, A.F.; Mashin, A.N.; Polyakov, S.M.

    1978-01-01

    Temperature dependences of the EPR intensity for silicon irradiated with the neon and argon ions at (2-4)x10 17 cm -2 doses have been studied. Paramagnetic defects with 2.0055 g-factor were recorded. Intensity jump associated with the transformation of the irradiated layer part to ferromagnetic state is observed at approximately 140 K. Paramagnetic centre distributions at temperatures above and lower the magnetic ordering temperature have heen investigated. It has been found, that ferromagnetic ordering is observed in a layer with the defect concentrations (3-7)x10 20 cm -3 , located at a depth > 100 A. Magnetic-ordered layer thickness is proportional to the incident ion energy

  4. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio, R., E-mail: rambrosi@uacj.mx [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Moreno, M.; Torres, A. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Carrillo, A. [Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Vivaldo, I.; Cosme, I. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Heredia, A. [Universidad Popular Autónoma del Estado de Puebla, Puebla (Mexico)

    2015-09-15

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σ{sub dark} changed by 5 order of magnitude under illumination, V{sub d} was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH{sub 4}, H{sub 2}, Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σ{sub RT}), activation energy (E{sub a}), and optical band gap (E{sub g}). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications.

  5. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    International Nuclear Information System (INIS)

    Ambrosio, R.; Moreno, M.; Torres, A.; Carrillo, A.; Vivaldo, I.; Cosme, I.; Heredia, A.

    2015-01-01

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σ dark changed by 5 order of magnitude under illumination, V d was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH 4 , H 2 , Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σ RT ), activation energy (E a ), and optical band gap (E g ). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications

  6. Dual-exposure technique for extending the dynamic range of x-ray flat panel detectors.

    Science.gov (United States)

    Sisniega, A; Abella, M; Desco, M; Vaquero, J J

    2014-01-20

    This work presents an approach to extend the dynamic range of x-ray flat panel detectors by combining two acquisitions of the same sample taken with two different x-ray photon flux levels and the same beam spectral configuration. In order to combine both datasets, the response of detector pixels was modelled in terms of mean and variance using a linear model. The model was extended to take into account the effect of pixel saturation. We estimated a joint probability density function (j-pdf) of the pixel values by assuming that each dataset follows an independent Gaussian distribution. This j-pdf was used for estimating the final pixel value of the high-dynamic-range dataset using a maximum likelihood method. The suitability of the pixel model for the representation of the detector signal was assessed using experimental data from a small-animal cone-beam micro-CT scanner equipped with a flat panel detector. The potential extension in dynamic range offered by our method was investigated for generic flat panel detectors using analytical expressions and simulations. The performance of the proposed dual-exposure approach in realistic imaging environments was compared with that of a regular single-exposure technique using experimental data from two different phantoms. Image quality was assessed in terms of signal-to-noise ratio, contrast, and analysis of profiles drawn on the images. The dynamic range, measured as the ratio between the exposure for saturation and the exposure equivalent to instrumentation noise, was increased from 76.9 to 166.7 when using our method. Dual-exposure results showed higher contrast-to-noise ratio and contrast resolution than the single-exposure acquisitions for the same x-ray dose. In addition, image artifacts were reduced in the combined dataset. This technique to extend the dynamic range of the detector without increasing the dose is particularly suited to image samples that contain both low and high attenuation regions.

  7. Raman study of localized recrystallization of amorphous silicon induced by laser beam

    KAUST Repository

    Tabet, Nouar A.

    2012-06-01

    The adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter. © 2012 IEEE.

  8. Properties of hydrogenated amorphous silicon (a-Si:H) deposited using a microwave Ecr plasma

    International Nuclear Information System (INIS)

    Mejia H, J.A.

    1996-01-01

    Hydrogenated amorphous silicon (a-Si:H) films have been widely applied to semiconductor devices, such as thin film transistors, solar cells and photosensitive devices. In this work, the first Si-H-Cl alloys (obtained at the National Institute for Nuclear Research of Mexico) were formed by a microwave electron cyclotron resonance (Ecr) plasma CVD method. Gaseous mixtures of silicon tetrachloride (Si Cl 4 ), hydrogen and argon were used. The Ecr plasma was generated by microwaves at 2.45 GHz and a magnetic field of 670 G was applied to maintain the discharge after resonance condition (occurring at 875 G). Si and Cl contents were analyzed by Rutherford Backscattering Spectrometry (RBS). It was found that, increasing proportion of Si Cl 4 in the mixture or decreasing pressure, the silicon and chlorine percentages decrease. Optical gaps were obtained by spectrophotometry. Decreasing temperature, optical gap values increase from 1.4 to 1.5 eV. (Author)

  9. X-ray spectroscopy of electronic structure of amorphous silicon and silicyne

    International Nuclear Information System (INIS)

    Mashin, A.I.; Khokhlov, A.F.; Mashin, N.I.; Domashevskaya, Eh.P.; Terekhov, V.A.

    2001-01-01

    SiK β and SiL 23 emission spectra of crystalline silicon (c-Si), amorphous hydrogenated silicon (α-Si:H) and silicyne have been studied by X-ray and ultrasoft X-ray spectroscopy. It is observed that SiL 23 emission spectra of silicyne displays not two maximums, as it usually observed for the c-Si and α-Si:H, but three ones. The third one is seen at high energies near 95.7 eV, and has an intensity about 75%. An additional maximum in the short- wave part of SiK β emission spectrum is observed. This difference of shapes of X-ray spectra between α-Si:H and silicyne is explained by the presence in silicyne a strong π-component of chemical bonds of a silicon atoms in silicyne [ru

  10. X-ray spectroscopy of electronic structure of amorphous silicon and silicyne

    CERN Document Server

    Mashin, A I; Mashin, N I; Domashevskaya, E P; Terekhov, V A

    2001-01-01

    SiK subbeta and SiL sub 2 sub 3 emission spectra of crystalline silicon (c-Si), amorphous hydrogenated silicon (alpha-Si:H) and silicyne have been studied by X-ray and ultrasoft X-ray spectroscopy. It is observed that SiL sub 2 sub 3 emission spectra of silicyne displays not two maximums, as it usually observed for the c-Si and alpha-Si:H, but three ones. The third one is seen at high energies near 95.7 eV, and has an intensity about 75%. An additional maximum in the short- wave part of SiK subbeta emission spectrum is observed. This difference of shapes of X-ray spectra between alpha-Si:H and silicyne is explained by the presence in silicyne a strong pi-component of chemical bonds of a silicon atoms in silicyne

  11. Near infrared photoluminescence of the hydrogenated amorphous silicon thin films with in-situ embedded silicon nanoparticles

    Czech Academy of Sciences Publication Activity Database

    Remeš, Zdeněk; Stuchlík, Jiří; Purkrt, Adam; Ledinský, Martin; Kupčík, Jaroslav

    2017-01-01

    Roč. 61, č. 2 (2017), s. 136-140 ISSN 0862-5468 R&D Projects: GA ČR GC16-10429J Grant - others:AV ČR(CZ) KONNECT-007 Program:Bilaterální spolupráce Institutional support: RVO:68378271 ; RVO:61388980 Keywords : amorphous silicon * chemical vapor deposition * photothermal deflection spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism; CA - Inorganic Chemistry (UACH-T) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Inorganic and nuclear chemistry (UACH-T) Impact factor: 0.439, year: 2016

  12. Efficient amorphous silicon solar cells: characterization, optimization, and optical loss analysis

    Directory of Open Access Journals (Sweden)

    Wayesh Qarony

    Full Text Available Hydrogenated amorphous silicon (a-Si:H has been effectively utilized as photoactive and doped layers for quite a while in thin-film solar applications but its energy conversion efficiency is limited due to thinner absorbing layer and light degradation issue. To overcome such confinements, it is expected to adjust better comprehension of device structure, material properties, and qualities since a little enhancement in the photocurrent significantly impacts on the conversion efficiency. Herein, some numerical simulations were performed to characterize and optimize different configuration of amorphous silicon-based thin-film solar cells. For the optical simulation, two-dimensional finite-difference time-domain (FDTD technique was used to analyze the superstrate (p-i-n planar amorphous silicon solar cells. Besides, the front transparent contact layer was also inquired by using SnO2:F and ZnO:Al materials to improve the photon absorption in the photoactive layer. The cell was studied for open-circuit voltage, external quantum efficiency, and short-circuit current density, which are building blocks for solar cell conversion efficiency. The optical simulations permit investigating optical losses at the individual layers. The enhancement in both short-circuit current density and open-circuit voltage prompts accomplishing more prominent power conversion efficiency. A maximum short-circuit current density of 15.32 mA/cm2 and an energy conversion efficiency of 11.3% were obtained for the optically optimized cell which is the best in class amorphous solar cell. Keywords: Superstrate p-i-n, Power loss, Quantum efficiency, Short circuit current, FDTD

  13. Percolation network in resistive switching devices with the structure of silver/amorphous silicon/p-type silicon

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yanhong; Gao, Ping; Bi, Kaifeng; Peng, Wei [School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024 (China); Jiang, Xuening; Xu, Hongxia [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian116024 (China)

    2014-01-27

    Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network.

  14. Phosphorus-doped Amorphous Silicon Nitride Films Applied to Crystalline Silicon Solar Cells

    NARCIS (Netherlands)

    Feinäugle, Matthias

    2008-01-01

    The Photovoltaics Group at the Universitat Politècnica de Catalunya is investigating silicon carbide (SiC) for the electronic passivation of the surface of crystalline silicon solar cells. The doping of SiC passivation layers with phosphorus resulted in a clear improvement of the minority carrier

  15. Food applications and the toxicological and nutritional implications of amorphous silicon dioxide.

    Science.gov (United States)

    Villota, R; Hawkes, J G

    1986-01-01

    The chemical and physical characteristics of the different types of amorphous silicon dioxide contribute to the versatility of these compounds in a variety of commercial applications. Traditionally, silicas have had a broad spectra of product usage including such areas as viscosity control agents in inks, paints, corrosion-resistant coatings, etc. and as excipients in pharmaceuticals and cosmetics. In the food industry, the most important application has been as an anticaking agent in powdered mixes, seasonings, and coffee whiteners. However, amorphous silica has multifunctional properties that would allow it to act as a viscosity control agent, emulsion stabilizer, suspension and dispersion agent, desiccant, etc. The utilization of silicas in these potential applications, however, has not been undertaken, partially because of the limited knowledge of their physiochemical interactions with other food components and partially due to their controversial status from a toxicological point of view. The main goal of this review is to compile current information on the incorporation of amorphous silicon dioxide as a highly functional and viable additive in the food processing industry as well as to discuss the most recent toxicological investigations of silica in an attempt to present some of the potential food applications and their concomitant toxicological implications. Some of the more significant differences between various silicas and their surface chemistries are presented to elucidate some of their mechanisms of interaction with food components and other biological systems and to aid in the prediction of their rheological or toxicological behavior.

  16. Research and development of photovoltaic power system. Interface studies of amorphous silicon; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon kaimen no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Konagai, M. [Tokyo Institute of Technology, Tokyo (Japan). Faculty of Engineering

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on interface of amorphous silicon for solar cells. In research on amorphous solar cells using ZnO for transparent electrically conductive films, considerations were given on a growth mechanism of a ZnO film using the MOCVD process. It was made clear that the ZnO film grows with Zn(OH)2 working as a film forming species. It was also shown that the larger the ZnO particle size is, the more the solar cell efficiency is improved. Furthermore, theoretical elucidation was made on effects of rear face of an interface on cell characteristics, and experimental discussions were given subsequently. In research on solar cells using hydrogen diluted `i` layers, delta-doped solar cells were fabricated based on basic data obtained in the previous fiscal year, and the hydrogen dilution effect was evaluated from the cell characteristics. When the hydrogen dilution ratio is increased from zero to one, the conversion efficiency has improved from 12.2% to 12.6%. In addition, experiments and discussions were given on solar cells fabricated by using SiH2Cl2. 9 figs.

  17. Photo-excited hot carrier dynamics in hydrogenated amorphous silicon imaged by 4D electron microscopy

    Science.gov (United States)

    Liao, Bolin; Najafi, Ebrahim; Li, Heng; Minnich, Austin J.; Zewail, Ahmed H.

    2017-09-01

    Charge carrier dynamics in amorphous semiconductors has been a topic of intense research that has been propelled by modern applications in thin-film solar cells, transistors and optical sensors. Charge transport in these materials differs fundamentally from that in crystalline semiconductors owing to the lack of long-range order and high defect density. Despite the existence of well-established experimental techniques such as photoconductivity time-of-flight and ultrafast optical measurements, many aspects of the dynamics of photo-excited charge carriers in amorphous semiconductors remain poorly understood. Here, we demonstrate direct imaging of carrier dynamics in space and time after photo-excitation in hydrogenated amorphous silicon (a-Si:H) by scanning ultrafast electron microscopy (SUEM). We observe an unexpected regime of fast diffusion immediately after photoexcitation, together with spontaneous electron-hole separation and charge trapping induced by the atomic disorder. Our findings demonstrate the rich dynamics of hot carrier transport in amorphous semiconductors that can be revealed by direct imaging based on SUEM.

  18. Computational Evaluation of Amorphous Carbon Coating for Durable Silicon Anodes for Lithium-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Jeongwoon Hwang

    2015-10-01

    Full Text Available We investigate the structural, mechanical, and electronic properties of graphite-like amorphous carbon coating on bulky silicon to examine whether it can improve the durability of the silicon anodes of lithium-ion batteries using molecular dynamics simulations and ab-initio electronic structure calculations. Structural models of carbon coating are constructed using molecular dynamics simulations of atomic carbon deposition with low incident energies (1–16 eV. As the incident energy decreases, the ratio of sp2 carbons increases, that of sp3 decreases, and the carbon films become more porous. The films prepared with very low incident energy contain lithium-ion conducting channels. Also, those films are electrically conductive to supplement the poor conductivity of silicon and can restore their structure after large deformation to accommodate the volume change during the operations. As a result of this study, we suggest that graphite-like porous carbon coating on silicon will extend the lifetime of the silicon anodes of lithium-ion batteries.

  19. Nonlinear properties of and nonlinear processing in hydrogenated amorphous silicon waveguides

    DEFF Research Database (Denmark)

    Kuyken, B.; Ji, Hua; Clemmen, S.

    2011-01-01

    We propose hydrogenated amorphous silicon nanowires as a platform for nonlinear optics in the telecommunication wavelength range. Extraction of the nonlinear parameter of these photonic nanowires reveals a figure of merit larger than 2. It is observed that the nonlinear optical properties...... of these waveguides degrade with time, but that this degradation can be reversed by annealing the samples. A four wave mixing conversion efficiency of + 12 dB is demonstrated in a 320 Gbit/s serial optical waveform data sampling experiment in a 4 mm long photonic nanowire....

  20. Effect of low level doping of boron and phosphorus on the properties of amorphous silicon films

    International Nuclear Information System (INIS)

    Tran, N.T.; Epstein, K.A.; Grimmer, D.P.; Vernstrom, G.D.

    1987-01-01

    Effect of the low level doping of boron and phosphorus on the properties of amorphous silicon films (a-Si:H) were studied. Doping level of both boron and phosphorus was in the range of 10/sup 17/ atoms/cm/sup 3/. Apparent improvement in the stability of dark and photoconductivity of a-Si: films upon low level doping does not result from the elimination of light-induced defects. The stability of the dark and photoconductivity upon doping is an indication of pinning of the Fermi level

  1. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    International Nuclear Information System (INIS)

    Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

    2006-01-01

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  2. Study of some structural properties of hydrogenated amorphous silicon thin films prepared by radiofrequency cathodic sputtering

    International Nuclear Information System (INIS)

    Mellassi, K.; Chafik El Idrissi, M.; Barhdadi, A.

    2001-08-01

    In this work, we have used the grazing X-rays reflectometry technique to characterise hydrogenated amorphous silicon thin films deposited by radio-frequency cathodic sputtering. Relfectometry measurements are taken immediately after films deposition as well as after having naturally oxidised their surfaces during a more or less prolonged stay in the ambient. For the films examined just after deposition, the role of hydrogen appears in the increase of their density. For those analysed after a short stay in the ambient, hydrogen plays a protective role against the oxidation of their surfaces. This role disappears when the stay in the ambient is so long. (author)

  3. Serially Connected Micro Amorphous Silicon Solar Cells for Compact High-Voltage Sources

    OpenAIRE

    Nam, Jiyoon; Lee, Youngjoo; Kim, Chang Su; Kim, Hogyoung; Kim, Dong-Ho; Jo, Sungjin

    2016-01-01

    We demonstrate a compact amorphous silicon (a-Si) solar module to be used as high-voltage power supply. In comparison with the organic solar module, the main advantages of the a-Si solar module are its compatibility with photolithography techniques and relatively high power conversion efficiency. The open circuit voltage of a-Si solar cells can be easily controlled by serially interconnecting a-Si solar cells. Moreover, the a-Si solar module can be easily patterned by photolithography in any ...

  4. Thin metal layer as transparent electrode in n-i-p amorphous silicon solar cells

    Directory of Open Access Journals (Sweden)

    Theuring Martin

    2014-07-01

    Full Text Available In this paper, transparent electrodes, based on a thin silver film and a capping layer, are investigated. Low deposition temperature, flexibility and low material costs are the advantages of this type of electrode. Their applicability in structured n-i-p amorphous silicon solar cells is demonstrated in simulation and experiment. The influence of the individual layer thicknesses on the solar cell performance is discussed and approaches for further improvements are given. For the silver film/capping layer electrode, a higher solar cell efficiency could be achieved compared to a reference ZnO:Al front contact.

  5. Structural, dynamical, and electronic properties of amorphous silicon: An ab initio molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Car, R.; Parrinello, M.

    1988-01-18

    An amorphous silicon structure is obtained with a computer simulation based on a new molecular-dynamics technique in which the interatomic potential is derived from a parameter-free quantum mechanical method. Our results for the atomic structure, the phonon spectrum, and the electronic properties are in excellent agreement with experiment. In addition we study details of the microscopic dynamics which are not directly accessible to experiment. We find in particular that structural defects are associated with weak bonds. These may give rise to low-frequency vibrational modes.

  6. On the temperature dependence of the photoconductivity of amorphous silicon nitride (a-Si Nx: H)

    International Nuclear Information System (INIS)

    Tessler, L.R.; Alvarez, F.; Chambouleyron, I.

    1984-01-01

    Experimental results on the photoconducticity of amorphous hydrogenated silicon nitride a-SiNx: H prepared from plasma decomposition of a gaseus mixture of silane and nitrogen ([Si H 4 ]/[N 2 ] ∼ 0.33) are presented. The material is deposited in a capacitively coupled glow discharge system and nitrogen content was continuously increased by increasing the RF power dissipated in the plasma. Studies of the photocurrent as a function of temperature as a function of temperature and lig ht intensities are reported. (Author) [pt

  7. The reversal of light-induced degradation in amorphous silicon solar cells by an electric field

    Energy Technology Data Exchange (ETDEWEB)

    Carlson, D.E.; Rajan, K. [Solarex, a Business Unit of Amoco/Enron Solar, Newtown, Pennsylvania 19840 (United States)

    1997-04-01

    A strong electric field has been shown to reverse the light-induced degradation of amorphous silicon solar cells while exposed to intense illumination at moderate temperatures. The rate of reversal increases with temperature, illumination intensity, and with the strength of the reverse bias field. The reversal process exhibits an activation energy on the order of 0.9 eV and can be increased by the trapping of either electrons or holes in the presence of a strong electric field. {copyright} {ital 1997 American Institute of Physics.}

  8. The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon

    Czech Academy of Sciences Publication Activity Database

    Kočka, Jan; Fejfar, Antonín; Mates, Tomáš; Fojtík, Petr; Dohnalová, Kateřina; Luterová, Kateřina; Stuchlík, Jiří; Stuchlíková, The-Ha; Pelant, Ivan; Rezek, Bohuslav; Stemmer, A.; Ito, M.

    2004-01-01

    Roč. 1, č. 5 (2004), s. 1097-1114 ISSN 1610-1634 R&D Projects: GA AV ČR IAA1010316; GA AV ČR IAB2949101; GA MŽP SM/300/1/03; GA ČR GA202/03/0789 Institutional research plan: CEZ:AV0Z1010914 Keywords : silicon thin films * amorphous/microcrystalline boundary * AFM microscopic study * model of transport * metal-induced crystallization Subject RIV: BM - Solid Matter Physics ; Magnetism

  9. Role of current profiles and atomic force microscope tips on local electric crystallization of amorphous silicon

    Czech Academy of Sciences Publication Activity Database

    Verveniotis, Elisseos; Rezek, Bohuslav; Šípek, Emil; Stuchlík, Jiří; Kočka, Jan

    2010-01-01

    Roč. 518, č. 21 (2010), s. 5965-5970 ISSN 0040-6090 R&D Projects: GA ČR GD202/09/H041; GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous materials * atomic force microscopy (AFM) * conductivity * crystallization * nanostructures * silicon * nickel Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.909, year: 2010

  10. Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure.

    Science.gov (United States)

    Munde, M S; Mehonic, A; Ng, W H; Buckwell, M; Montesi, L; Bosman, M; Shluger, A L; Kenyon, A J

    2017-08-24

    We studied intrinsic resistance switching behaviour in sputter-deposited amorphous silicon suboxide (a-SiO x ) films with varying degrees of roughness at the oxide-electrode interface. By combining electrical probing measurements, atomic force microscopy (AFM), and scanning transmission electron microscopy (STEM), we observe that devices with rougher oxide-electrode interfaces exhibit lower electroforming voltages and more reliable switching behaviour. We show that rougher interfaces are consistent with enhanced columnar microstructure in the oxide layer. Our results suggest that columnar microstructure in the oxide will be a key factor to consider for the optimization of future SiOx-based resistance random access memory.

  11. Effect of starting point formation on the crystallization of amorphous silicon films by flash lamp annealing

    Science.gov (United States)

    Sato, Daiki; Ohdaira, Keisuke

    2018-04-01

    We succeed in the crystallization of hydrogenated amorphous silicon (a-Si:H) films by flash lamp annealing (FLA) at a low fluence by intentionally creating starting points for the trigger of explosive crystallization (EC). We confirm that a partly thick a-Si part can induce the crystallization of a-Si films. A periodic wavy structure is observed on the surface of polycrystalline silicon (poly-Si) on and near the thick parts, which is a clear indication of the emergence of EC. Creating partly thick a-Si parts can thus be effective for the control of the starting point of crystallization by FLA and can realize the crystallization of a-Si with high reproducibility. We also compare the effects of creating thick parts at the center and along the edge of the substrates, and a thick part along the edge of the substrates leads to the initiation of crystallization at a lower fluence.

  12. Hydrogenated amorphous silicon nitride photonic crystals for improved-performance surface electromagnetic wave biosensors.

    Science.gov (United States)

    Sinibaldi, Alberto; Descrovi, Emiliano; Giorgis, Fabrizio; Dominici, Lorenzo; Ballarini, Mirko; Mandracci, Pietro; Danz, Norbert; Michelotti, Francesco

    2012-10-01

    We exploit the properties of surface electromagnetic waves propagating at the surface of finite one dimensional photonic crystals to improve the performance of optical biosensors with respect to the standard surface plasmon resonance approach. We demonstrate that the hydrogenated amorphous silicon nitride technology is a versatile platform for fabricating one dimensional photonic crystals with any desirable design and operating in a wide wavelength range, from the visible to the near infrared. We prepared sensors based on photonic crystals sustaining either guided modes or surface electromagnetic waves, also known as Bloch surface waves. We carried out for the first time a direct experimental comparison of their sensitivity and figure of merit with surface plasmon polaritons on metal layers, by making use of a commercial surface plasmon resonance instrument that was slightly adapted for the experiments. Our measurements demonstrate that the Bloch surface waves on silicon nitride photonic crystals outperform surface plasmon polaritons by a factor 1.3 in terms of figure of merit.

  13. Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications

    Science.gov (United States)

    García, Héctor; Castán, Helena; Dueñas, Salvador; Bailón, Luis; García-Hernansanz, Rodrigo; Olea, Javier; del Prado, Álvaro; Mártil, Ignacio

    2016-07-01

    A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100-150 °C) might be the best choice.

  14. Contribution to the analysis of hydrogenated amorphous silicon by nuclear methods

    International Nuclear Information System (INIS)

    Jeannerot, Luc.

    1981-01-01

    The physico chemical characterization of hydrogenated amorphous silicon thin films (0,5 to 2 μm thick) makes use of nuclear microanalysis for quantitative determination and depth profiling of the elements hydrogen, oxygen, argon and carbon. Concerning the methods, performances of the hydrogen analysis using the 1 H( 15 N, αγ) nuclear reaction are presented emphasizing the precision and the analytical consequences of the interaction ion-material. For charged particles data processing (mainly Rutherford backscattering) computer treatments have been developed either for concentration profile obtention as for spectra prediction of given material configurations. The essential results concerning hydrogenated silicon prepared by RF sputtering are on one hand the correlation between the oxygen incorporation and the beam-induced hydrogen effusion and in the other hand the role of the substrate in the impurities incorporation. From the study of the elaboration conditions of the material a tentative interpretation is made for the incorporation and the role of oxygen [fr

  15. Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride

    Directory of Open Access Journals (Sweden)

    Buiculescu Raluca

    2011-01-01

    Full Text Available Abstract The electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride is studied by measuring the voltage and temperature dependences of the current. The microstructure of the network is investigated by cross-sectional transmission electron microscopy. The multi-walled carbon nanotube network has an uniform spatial extension in the silicon nitride matrix. The current-voltage and resistance-temperature characteristics are both linear, proving the metallic behavior of the network. The I-V curves present oscillations that are further analyzed by computing the conductance-voltage characteristics. The conductance presents minima and maxima that appear at the same voltage for both bias polarities, at both 20 and 298 K, and that are not periodic. These oscillations are interpreted as due to percolation processes. The voltage percolation thresholds are identified with the conductance minima.

  16. Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide

    Science.gov (United States)

    Mota-Santiago, P.; Vazquez, H.; Bierschenk, T.; Kremer, F.; Nadzri, A.; Schauries, D.; Djurabekova, F.; Nordlund, K.; Trautmann, C.; Mudie, S.; Ridgway, M. C.; Kluth, P.

    2018-04-01

    The cylindrical nanoscale density variations resulting from the interaction of 185 MeV and 2.2 GeV Au ions with 1.0 μm thick amorphous SiN x :H and SiO x :H layers are determined using small angle x-ray scattering measurements. The resulting density profiles resembles an under-dense core surrounded by an over-dense shell with a smooth transition between the two regions, consistent with molecular-dynamics simulations. For amorphous SiN x :H, the density variations show a radius of 4.2 nm with a relative density change three times larger than the value determined for amorphous SiO x :H, with a radius of 5.5 nm. Complementary infrared spectroscopy measurements exhibit a damage cross-section comparable to the core dimensions. The morphology of the density variations results from freezing in the local viscous flow arising from the non-uniform temperature profile in the radial direction of the ion path. The concomitant drop in viscosity mediated by the thermal conductivity appears to be the main driving force rather than the presence of a density anomaly.

  17. Lowering the ignition voltage by the dual microhollow cathode configuration for multichannel flat panel lamp

    International Nuclear Information System (INIS)

    Lee, Tae Il; Park, Ki Wan; Lee, Sung Won; Baik, Hong Koo

    2006-01-01

    We have developed a dual microhollow cathode configuration, employing one power supply circuit with a resistor that is suitable for lamp starting without additional power supplier. We also investigated their electrical characteristics and photo images, varying the applied voltage. The electrical and optical measurements showed that the discharge passed through four distinct stages: no discharges, the first microhollow cathode discharges, the both of the first and second microhollow cathode discharges, and finally the main discharge. As a result, the V s and E s /p of a dual microhollow configuration were lower by a factor of about 2 than those of a diode at 40 Torr. We have also observed that the parallel operation can be possible with a single resistor in nine channels flat panel lamp

  18. Gaseous flat-panel detector with glass gas electron multiplier coupled with micro-photodiode array

    Science.gov (United States)

    Mitsuya, Yuki; Miyoshi, Hiroaki; Fujiwara, Takeshi; Uesaka, Mitsuru; Takahashi, Hiroyuki

    2017-11-01

    In this study, we propose and demonstrate a novel imaging system, a gaseous flat-panel detector (FPD). The gaseous FPD consists of a glass gas electron multiplier (G-GEM) with a scintillation gas, which is optically coupled with photodiode panel fabricated with liquid crystal display technology. The G-GEM is ideal as a low energy deposition radiation detector because of its single stage high gas-gain and hence, its high photon yield. We obtained a preliminary X-ray image with the system by using a Ne/CF4 90/10 gas mixture. The typical position resolution was 0.93 mm in FWHM, which was obtained from the fitting of edge profiles

  19. Percutaneous foot joint needle placement using a C-arm flat-panel detector CT.

    Science.gov (United States)

    Wiewiorski, Martin; Takes, Martin Thanh Long; Valderrabano, Victor; Jacob, Augustinus Ludwig

    2012-03-01

    Image guidance is valuable for diagnostic injections in foot orthopaedics. Flat-detector computed tomography (FD-CT) was implemented using a C-arm, and the system was tested for needle guidance in foot joint injections. FD-CT-guided joint infiltration was performed in 6 patients referred from the orthopaedic department for diagnostic foot injections. All interventions were performed utilising a flat-panel fluoroscopy system utilising specialised image guidance and planning software. Successful infiltration was defined by localisation of contrast media depot in the targeted joint. The pre- and post-interventional numeric analogue scale (NAS) pain score was assessed. All injections were technically successful. Contrast media deposit was documented in all targeted joints. Significant relief of symptoms was noted by all 6 participants. FD-CT-guided joint infiltration is a feasible method for diagnostic infiltration of midfoot and hindfoot joints. The FD-CT approach may become an alternative to commonly used 2D-fluoroscopically guidance.

  20. Modelling of scintillator based flat-panel detectors with Monte-Carlo simulations

    International Nuclear Information System (INIS)

    Reims, N; Sukowski, F; Uhlmann, N

    2011-01-01

    Scintillator based flat panel detectors are state of the art in the field of industrial X-ray imaging applications. Choosing the proper system and setup parameters for the vast range of different applications can be a time consuming task, especially when developing new detector systems. Since the system behaviour cannot always be foreseen easily, Monte-Carlo (MC) simulations are keys to gain further knowledge of system components and their behaviour for different imaging conditions. In this work we used two Monte-Carlo based models to examine an indirect converting flat panel detector, specifically the Hamamatsu C9312SK. We focused on the signal generation in the scintillation layer and its influence on the spatial resolution of the whole system. The models differ significantly in their level of complexity. The first model gives a global description of the detector based on different parameters characterizing the spatial resolution. With relatively small effort a simulation model can be developed which equates the real detector regarding signal transfer. The second model allows a more detailed insight of the system. It is based on the well established cascade theory, i.e. describing the detector as a cascade of elemental gain and scattering stages, which represent the built in components and their signal transfer behaviour. In comparison to the first model the influence of single components especially the important light spread behaviour in the scintillator can be analysed in a more differentiated way. Although the implementation of the second model is more time consuming both models have in common that a relatively small amount of system manufacturer parameters are needed. The results of both models were in good agreement with the measured parameters of the real system.

  1. Integrated radiotherapy imaging system (IRIS): design considerations of tumour tracking with linac gantry-mounted diagnostic x-ray systems with flat-panel detectors.

    Science.gov (United States)

    Berbeco, Ross I; Jiang, Steve B; Sharp, Gregory C; Chen, George T; Mostafavi, Hassan; Shirato, Hiroki

    2004-01-21

    The design of an integrated radiotherapy imaging system (IRIS), consisting of gantry mounted diagnostic (kV) x-ray tubes and fast read-out flat-panel amorphous-silicon detectors, has been studied. The system is meant to be capable of three main functions: radiographs for three-dimensional (3D) patient set-up, cone-beam CT and real-time tumour/marker tracking. The goal of the current study is to determine whether one source/panel pair is sufficient for real-time tumour/marker tracking and, if two are needed, the optimal position of each relative to other components and the isocentre. A single gantry-mounted source/imager pair is certainly capable of the first two of the three functions listed above and may also be useful for the third, if combined with prior knowledge of the target's trajectory. This would be necessary because only motion in two dimensions is visible with a single imager/source system. However, with previously collected information about the trajectory, the third coordinate may be derived from the other two with sufficient accuracy to facilitate tracking. This deduction of the third coordinate can only be made if the 3D tumour/marker trajectory is consistent from fraction to fraction. The feasibility of tumour tracking with one source/imager pair has been theoretically examined here using measured lung marker trajectory data for seven patients from multiple treatment fractions. The patients' selection criteria include minimum mean amplitudes of the tumour motions greater than 1 cm peak-to-peak. The marker trajectory for each patient was modelled using the first fraction data. Then for the rest of the data, marker positions were derived from the imager projections at various gantry angles and compared with the measured tumour positions. Our results show that, due to the three dimensionality and irregular trajectory characteristics of tumour motion, on a fraction-to-fraction basis, a 'monoscopic' system (single source/imager) is inadequate for

  2. Elastic Measurements of Amorphous Silicon Films at mK Temperatures

    Science.gov (United States)

    Fefferman, Andrew; Maldonado, Ana; Collin, Eddy; Liu, Xiao; Metcalf, Tom; Jernigan, Glenn

    2017-06-01

    The low-temperature properties of glass are distinct from those of crystals due to the presence of poorly understood low-energy excitations. The tunneling model proposes that these are atoms tunneling between nearby equilibria, forming tunneling two-level systems (TLSs). This model is rather successful, but it does not explain the remarkably universal value of the mechanical dissipation Q^{-1} near 1 K. The only known exceptions to this universality are the Q^{-1} of certain thin films of amorphous silicon, carbon and germanium. Recently, it was found that Q^{-1} of amorphous silicon (a-Si) films can be reduced by two orders of magnitude by increasing the temperature of the substrate during deposition. According to the tunneling model, the reduction in Q^{-1} at 1 K implies a reduction in P0γ 2, where P0 is the density of TLSs and γ is their coupling to phonons. In this preliminary report, we demonstrate elastic measurements of a-Si films down to 20 mK. This will allow us, in future work, to determine whether P0 or γ is responsible for the reduction in Q^{-1} with deposition temperature.

  3. Achieving thermography with a thermal security camera using uncooled amorphous silicon microbolometer image sensors

    Science.gov (United States)

    Wang, Yu-Wei; Tesdahl, Curtis; Owens, Jim; Dorn, David

    2012-06-01

    Advancements in uncooled microbolometer technology over the last several years have opened up many commercial applications which had been previously cost prohibitive. Thermal technology is no longer limited to the military and government market segments. One type of thermal sensor with low NETD which is available in the commercial market segment is the uncooled amorphous silicon (α-Si) microbolometer image sensor. Typical thermal security cameras focus on providing the best image quality by auto tonemaping (contrast enhancing) the image, which provides the best contrast depending on the temperature range of the scene. While this may provide enough information to detect objects and activities, there are further benefits of being able to estimate the actual object temperatures in a scene. This thermographic ability can provide functionality beyond typical security cameras by being able to monitor processes. Example applications of thermography[2] with thermal camera include: monitoring electrical circuits, industrial machinery, building thermal leaks, oil/gas pipelines, power substations, etc...[3][5] This paper discusses the methodology of estimating object temperatures by characterizing/calibrating different components inside a thermal camera utilizing an uncooled amorphous silicon microbolometer image sensor. Plots of system performance across camera operating temperatures will be shown.

  4. Implantation of xenon in amorphous carbon and silicon for brachytherapy application

    International Nuclear Information System (INIS)

    Marques, F.C.; Barbieri, P.F.; Viana, G.A.; Silva, D.S. da

    2013-01-01

    We report a procedure to implant high dose of xenon atoms (Xe) in amorphous carbon, a-C, and amorphous silicon, a-Si, for application in brachytherapy seeds. An ion beam assisted deposition (IBAD) system was used for the deposition of the films, where one ion gun was used for sputtering a carbon (or silicon) target, while the other ion gun was used to simultaneously bombard the growing film with a beam of xenon ion Xe + in the 0–300 eV range. Xe atoms were implanted into the film with concentration up to 5.5 at.%, obtained with Xe bombardment energy in the 50–150 eV range. X-ray absorption spectroscopy was used to investigate the local arrangement of the implanted Xe atoms through the Xe L III absorption edge (4.75 keV). It was observed that Xe atoms tend to agglomerate in nanoclusters in a-C and are dispersed in a-Si.

  5. Amorphous SiC layers for electrically conductive Rugate filters in silicon based solar cells

    Science.gov (United States)

    Janz, S.; Peters, M.; Künle, M.; Gradmann, R.; Suwito, D.

    2010-05-01

    The subject of this work is the development of an electrically conductive Rugate filter for photovoltaic applications. We think that the optical as well as the electrical performance of the filter can be adapted especially to the requirements of crystalline Si thin-film and amorphous/crystalline silicon tandem solar cells. We have deposited amorphous hydrogenated Silicon Carbide layers (a-SixC1-x:H) with the precursor gases methane (CH4), silane (SiH4) and diborane (B2H6) applying Plasma Enhanced Chemical Vapour Deposition (PECVD). Through changing just the precursor flows a floating refractive index n from 1.9 to 3.5 (at 633 nm) could be achieved quite accurately. Different complex layer stacks (up to 200 layers) with a sinusoidal refractive index variation normal to the incident light were deposited in just 80 min on 100x100 mm2. Transmission measurements show good agreement between simulation and experiment which proofs our ability to control the deposition process, the good knowledge of the optical behaviour of the different SiC single layers and the advanced stage of our simulation model. The doped single layers show lateral conductivities which were extremely dependent on the Si/C ratio.

  6. Band Offsets at the Interface between Crystalline and Amorphous Silicon from First Principles

    Science.gov (United States)

    Jarolimek, K.; Hazrati, E.; de Groot, R. A.; de Wijs, G. A.

    2017-07-01

    The band offsets between crystalline and hydrogenated amorphous silicon (a -Si ∶H ) are key parameters governing the charge transport in modern silicon heterojunction solar cells. They are an important input for macroscopic simulators that are used to further optimize the solar cell. Past experimental studies, using x-ray photoelectron spectroscopy (XPS) and capacitance-voltage measurements, have yielded conflicting results on the band offset. Here, we present a computational study on the band offsets. It is based on atomistic models and density-functional theory (DFT). The amorphous part of the interface is obtained by relatively long DFT first-principles molecular-dynamics runs at an elevated temperature on 30 statistically independent samples. In order to obtain a realistic conduction-band position the electronic structure of the interface is calculated with a hybrid functional. We find a slight asymmetry in the band offsets, where the offset in the valence band (0.29 eV) is larger than in the conduction band (0.17 eV). Our results are in agreement with the latest XPS measurements that report a valence-band offset of 0.3 eV [M. Liebhaber et al., Appl. Phys. Lett. 106, 031601 (2015), 10.1063/1.4906195].

  7. Aluminium-induced crystallization of amorphous silicon films deposited by DC magnetron sputtering on glasses

    International Nuclear Information System (INIS)

    Kezzoula, F.; Hammouda, A.; Kechouane, M.; Simon, P.; Abaidia, S.E.H.; Keffous, A.; Cherfi, R.; Menari, H.; Manseri, A.

    2011-01-01

    Amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) films were deposited by DC magnetron sputtering technique with argon and hydrogen plasma mixture on Al deposited by thermal evaporation on glass substrates. The a-Si/Al and a-Si:H/Al thin films were annealed at different temperatures ranging from 250 to 550 deg. C during 4 h in vacuum-sealed bulb. The effects of annealing temperature on optical, structural and morphological properties of as-grown as well as the vacuum-annealed a-Si/Al and a-Si:H/Al thin films are presented in this contribution. The averaged transmittance of a-Si:H/Al film increases upon increasing the annealing temperature. XRD measurements clearly evidence that crystallization is initiated at 450 deg. C. The number and intensity of diffraction peaks appearing in the diffraction patterns are more important in a-Si:H/Al than that in a-Si/Al layers. Results show that a-Si:H films deposited on Al/glass crystallize above 450 deg. C and present better crystallization than the a-Si layers. The presence of hydrogen induces an improvement of structural properties of poly-Si prepared by aluminium-induced crystallization (AIC).

  8. Amorphous silicon pixel layers with cesium iodide converters for medical radiography

    International Nuclear Information System (INIS)

    Jing, T.; Cho, G.; Goodman, C.A.

    1993-11-01

    We describe the properties of evaporated layers of Cesium Iodide (Thallium activated) deposited on substrates that enable easy coupling to amorphous silicon pixel arrays. The CsI(Tl) layers range in thickness from 65 to 220μm. We used the two-boat evaporator system to deposit CsI(Tl) layers. This system ensures the formation of the scintillator film with homogenous thallium concentration which is essential for optimizing the scintillation light emission efficiency. The Tl concentration was kept to 0.1--0.2 mole percent for the highest light output. Temperature annealing can affect the microstructure as well as light output of the CsI(Tl) film. 200--300C temperature annealing can increase the light output by a factor of two. The amorphous silicon pixel arrays are p-i-n diodes approximately lμm thick with transparent electrodes to enable them to detect the scintillation light produced by X-rays incident on the CsI(Tl). Digital radiography requires a good spatial resolution. This is accomplished by making the detector pixel size less then 50μm. The light emission from the CsI(Tl) is collimated by techniques involving the deposition process on pattered substrates. We have measured MTF of greater than 12 line pairs per mm at the 10% level

  9. Modeling chemical and topological disorder in irradiation-amorphized silicon carbide

    International Nuclear Information System (INIS)

    Yuan Xianglong; Hobbs, Linn W.

    2002-01-01

    In order to explore the relationship of chemical disorder to topological disorder during irradiation-induced amorphization of silicon carbide, a topological analysis of homonuclear bond distribution, atom coordination number and network ring size distribution has been carried out for imposed simulated disorder, equilibrated with molecular dynamics (MD) procedures utilizing a Tersoff potential. Starting configurations included random atom positions, β-SiC coordinates chemically disordered over a range of chemical disorder parameters and atom coordinates generated from earlier MD simulations of embedded collision cascades. For random starting positions in embedded simulations, the MD refinement converged to an average Si coordination of 4.3 and an average of 1.4 Si-Si and 1.0 C-C bonds per Si and C site respectively. A chemical disorder threshold was observed (χ≡N C-C /N Si-C >0.3-0.4), below which range MD equilibration resulted in crystalline behavior at all temperatures and above which a glass transition was observed. It was thus concluded that amorphization is driven by a critical concentration of homonuclear bonds. About 80% of the density change at amorphization was attributable to threshold chemical disorder, while significant topological changes occurred only for larger values of the chemical disorder parameter

  10. Fabrication of amorphous micro-ring arrays in crystalline silicon using ultrashort laser pulses

    Science.gov (United States)

    Fuentes-Edfuf, Yasser; Garcia-Lechuga, Mario; Puerto, Daniel; Florian, Camilo; Garcia-Leis, Adianez; Sanchez-Cortes, Santiago; Solis, Javier; Siegel, Jan

    2017-05-01

    We demonstrate a simple way to fabricate amorphous micro-rings in crystalline silicon using direct laser writing. This method is based on the fact that the phase of a thin surface layer can be changed into the amorphous phase by irradiation with a few ultrashort laser pulses (800 nm wavelength and 100 fs duration). Surface-depressed amorphous rings with a central crystalline disk can be fabricated without the need for beam shaping, featuring attractive optical, topographical, and electrical properties. The underlying formation mechanism and phase change pathway have been investigated by means of fs-resolved microscopy, identifying fluence-dependent melting and solidification dynamics of the material as the responsible mechanism. We demonstrate that the lateral dimensions of the rings can be scaled and that the rings can be stitched together, forming extended arrays of structures not limited to annular shapes. This technique and the resulting structures may find applications in a variety of fields such as optics, nanoelectronics, and mechatronics.

  11. Wavelength prediction of laser incident on amorphous silicon detector by neural network

    International Nuclear Information System (INIS)

    Esmaeili Sani, V.; Moussavi-Zarandi, A.; Kafaee, M.

    2011-01-01

    In this paper we present a method based on artificial neural networks (ANN) and the use of only one amorphous semiconductor detector to predict the wavelength of incident laser. Amorphous semiconductors and especially amorphous hydrogenated silicon, a-Si:H, are now widely used in many electronic devices, such as solar cells, many types of position sensitive detectors and X-ray imagers for medical applications. In order to study the electrical properties and detection characteristics of thin films of a-Si:H, n-i-p structures have been simulated by SILVACO software. The basic electronic properties of most of the materials used are known, but device modeling depends on a large number of parameters that are not all well known. In addition, the relationship between the shape of the induced anode current and the wavelength of the incident laser leads to complicated calculations. Soft data-based computational methods can model multidimensional non-linear processes and represent the complex input-output relation between the form of the output signal and the wavelength of incident laser.

  12. Wavelength prediction of laser incident on amorphous silicon detector by neural network

    Energy Technology Data Exchange (ETDEWEB)

    Esmaeili Sani, V., E-mail: vaheed_esmaeely80@yahoo.com [Amirkabir University of Technology, Faculty of Physics, P.O. Box 4155-4494, Tehran (Iran, Islamic Republic of); Moussavi-Zarandi, A.; Kafaee, M. [Amirkabir University of Technology, Faculty of Physics, P.O. Box 4155-4494, Tehran (Iran, Islamic Republic of)

    2011-10-21

    In this paper we present a method based on artificial neural networks (ANN) and the use of only one amorphous semiconductor detector to predict the wavelength of incident laser. Amorphous semiconductors and especially amorphous hydrogenated silicon, a-Si:H, are now widely used in many electronic devices, such as solar cells, many types of position sensitive detectors and X-ray imagers for medical applications. In order to study the electrical properties and detection characteristics of thin films of a-Si:H, n-i-p structures have been simulated by SILVACO software. The basic electronic properties of most of the materials used are known, but device modeling depends on a large number of parameters that are not all well known. In addition, the relationship between the shape of the induced anode current and the wavelength of the incident laser leads to complicated calculations. Soft data-based computational methods can model multidimensional non-linear processes and represent the complex input-output relation between the form of the output signal and the wavelength of incident laser.

  13. Non-negligible Contributions to Thermal Conductivity From Localized Modes in Amorphous Silicon Dioxide.

    Science.gov (United States)

    Lv, Wei; Henry, Asegun

    2016-10-21

    Thermal conductivity is important for almost all applications involving heat transfer. The theory and modeling of crystalline materials is in some sense a solved problem, where one can now calculate their thermal conductivity from first principles using expressions based on the phonon gas model (PGM). However, modeling of amorphous materials still has many open questions, because the PGM itself becomes questionable when one cannot rigorously define the phonon velocities. In this report, we used our recently developed Green-Kubo modal analysis (GKMA) method to study amorphous silicon dioxide (a-SiO 2 ). The predicted thermal conductivities exhibit excellent agreement with experiments and anharmonic effects are included in the thermal conductivity calculation for all the modes in a-SiO 2 for the first time. Previously, localized modes (locons) have been thought to have a negligible contribution to thermal conductivity, due to their highly localized nature. However, in a-SiO 2 our results indicate that locons contribute more than 10% to the total thermal conductivity from 400 K to 800 K and they are largely responsible for the increase in thermal conductivity of a-SiO 2 above room temperature. This is an effect that cannot be explained by previous methods and therefore offers new insight into the nature of phonon transport in amorphous/glassy materials.

  14. Nuclear reaction analysis of hydrogen in amorphous silicon and silicon carbide films

    International Nuclear Information System (INIS)

    Guivarc'h, A.; Le Contellec, M.; Richard, J.; Ligeon, E.; Fontenille, J.; Danielou, R.

    1980-01-01

    The 1 H( 11 B, α)αα nuclear reaction is used to determine the H content and the density of amorphous semiconductor Si 1 -sub(x)Csub(x)H 2 and SiHsub(z) thin films. Rutherford backscattering is used to determine the x values and infrared transmission to study the hydrogen bonds. We have observed a transfer or/and a release of hydrogen under bombardment by various ions and we show that this last effect must be taken into account for a correct determination of the hydrogen content. An attempt is made to correlate the hydrogen release with electronic and nuclear energy losses. (orig.)

  15. Direct measurement of free-energy barrier to nucleation of crystallites in amorphous silicon thin films

    Science.gov (United States)

    Shi, Frank G.

    1994-01-01

    A method is introduced to measure the free-energy barrier W(sup *), the activation energy, and activation entropy to nucleation of crystallites in amorphous solids, independent of the energy barrier to growth. The method allows one to determine the temperature dependence of W(sup *), and the effect of the preparation conditions of the initial amorphous phase, the dopants, and the crystallization methds on W(sup *). The method is applied to determine the free-energy barrier to nucleation of crystallites in amorphous silicon (a-Si) thin films. For thermally induced nucleation in a-Si thin films with annealing temperatures in the range of from 824 to 983 K, the free-energy barrier W(sup *) to nucleation of silicon crystals is about 2.0 - 2.1 eV regardless of the preparation conditions of the films. The observation supports the idea that a-Si transforms into an intermediate amorphous state through the structural relaxation prior to the onset of nucleation of crystallites in a-Si. The observation also indicates that the activation entropy may be an insignificant part of the free-energy barrier for the nucleation of crystallites in a-Si. Compared with the free-energy barrier to nucleation of crystallites in undoped a-Si films, a significant reduction is observed in the free-energy barrier to nucleation in Cu-doped a-Si films. For a-Si under irradiation of Xe(2+) at 10(exp 5) eV, the free-energy barrier to ion-induced nucleation of crystallites is shown to be about half of the value associated with thermal-induced nucleation of crystallites in a-Si under the otherwise same conditions, which is much more significant than previously expected. The present method has a general kinetic basis; it thus should be equally applicable to nucleation of crystallites in any amorphous elemental semiconductors and semiconductor alloys, metallic and polymeric glasses, and to nucleation of crystallites in melts and solutions.

  16. Embedded LTPS flash cells with oxide-nitride-oxynitride stack structure for realization of multi-function mobile flat panel displays

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Sungwook; Kim, Jaehong; Son, Hyukjoo; Jang, Kyungsoo; Cho, Jaehyun; Kim, Kyunghae; Choi, Byoungdeog; Yi, Junsin [School of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of)], E-mail: yi@yurim.skku.ac.kr

    2008-09-07

    In this paper, embedded flash (eFlash) cells were fabricated for realization of multi-functions, such as systems on panels (SOPs) and threshold voltage (V{sub TH}) stabilization of flat panel displays (FPDs). Fabrication was via low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology and an oxide-nitride-oxynitride (ONOn) stack structure on glass. Poly-silicon (poly-Si) on glass, which was annealed via an excimer laser, has a very rough surface. To fabricate LTPS eFlash cells on glass with a very rough poly-Si surface, plasma-assisted oxynitridation was performed; nitrous oxide (N{sub 2}O) served as a reactive gas. LTPS eFlash cells have excellent TFT electrical properties, such as V{sub TH}, a high On/Off current ratio and a low sub-threshold swing (S). The results demonstrate that eFlash cells fabricated on glass with a rough silicon surface, via an ONOn stack structure, have switching characteristics suitable for data storage, such as a low operating voltage (<{+-}10 V) suitable for mobile FPDs, a threshold voltage window, {delta}V{sub TH}, which exceeds 2.3 V, between the programming and erasing (P/E) states, over a period of 10 years, and the capacity to retain the initial {delta}V{sub TH} over a period of 10{sup 5} P/E operations. (fast track communication)

  17. Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

    International Nuclear Information System (INIS)

    Walton, J.T.; Hong, W.S.; Luke, P.N.; Wang, N.W.; Ziemba, F.P.

    1996-10-01

    Results on characterization of electrical properties of amorphous Si films for the 3 different growth methods (RF sputtering, PECVD [plasma enhanced], LPCVD [low pressure]) are reported. Performance of these a-Si films as heterojunctions on high resistivity p-type and n- type crystalline Si is examined by measuring the noise, leakage current, and the alpha particle response of 5mm dia detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. Results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated

  18. The use of amorphous silicon in fabricating a photovoltaic thermal system

    Energy Technology Data Exchange (ETDEWEB)

    Mahtani, P.; Yeghikyan, D.; Kherani, N.P.; Zukotynski, S. [Toronto Univ., ON (Canada). Dept. of Electrical and Computer Engineering

    2007-07-01

    The cost of photovoltaic-thermal (PV/T) panels can be reduced by depositing PV materials directly onto the heat exchanger of an STC system. However, most thin-film c-Si solar cells require deposition temperatures in the range of 800 degrees C to 1400 degrees C, which limits the substrates that can be used to highly doped silicon wafers, silicon carbide, and graphite. This paper suggested that the ability to deposit hydrogenated amorphous silicon (a-Si:H) at low temperatures makes the material a strong candidate for PV/T applications. A PV/T system based on directly depositing a-Si:H on the surface of a heat exchanger was presented. The system was able to overcome the drawbacks of current PV/T systems. Plasma-enhanced chemical vapor deposition (PECVD) was used to deposit a-Si:H at temperatures below 200 degrees C. The low temperature deposition allowed the a-Si:H to be directly deposited onto a heat exchanger in STC modules. Results of the study indicated that the emissivity and the thermal collection efficiency of the a-Si:H PV/T systems was higher than standard PV/T systems which used c-Si PV cells. Future work will be conducted to investigate the integration of thermally conductive and electrically insulative materials needed to interconnect the PV cells in series. 16 refs., 1 fig.

  19. Structural Color Filters Enabled by a Dielectric Metasurface Incorporating Hydrogenated Amorphous Silicon Nanodisks.

    Science.gov (United States)

    Park, Chul-Soon; Shrestha, Vivek Raj; Yue, Wenjing; Gao, Song; Lee, Sang-Shin; Kim, Eun-Soo; Choi, Duk-Yong

    2017-05-31

    It is advantageous to construct a dielectric metasurface in silicon due to its compatibility with cost-effective, mature processes for complementary metal-oxide-semiconductor devices. However, high-quality crystalline-silicon films are difficult to grow on foreign substrates. In this work, we propose and realize highly efficient structural color filters based on a dielectric metasurface exploiting hydrogenated amorphous silicon (a-Si:H), known to be lossy in the visible regime. The metasurface is comprised of an array of a-Si:H nanodisks embedded in a polymer, providing a homogeneously planarized surface that is crucial for practical applications. The a-Si:H nanodisk element is deemed to individually support an electric dipole (ED) and magnetic dipole (MD) resonance via Mie scattering, thereby leading to wavelength-dependent filtering characteristics. The ED and MD can be precisely identified by observing the resonant field profiles with the assistance of finite-difference time-domain simulations. The completed color filters provide a high transmission of around 90% in the off-resonance band longer than their resonant wavelengths, exhibiting vivid subtractive colors. A wide range of colors can be facilitated by tuning the resonance by adjusting the structural parameters like the period and diameter of the a-Si:H nanodisk. The proposed devices will be actively utilized to implement color displays, imaging devices, and photorealistic color printing.

  20. Development of amorphous silicon based EUV hardmasks through physical vapor deposition

    Science.gov (United States)

    De Silva, Anuja; Mignot, Yann; Meli, Luciana; DeVries, Scott; Xu, Yongan; Seshadri, Indira; Felix, Nelson M.; Zeng, Wilson; Cao, Yong; Phan, Khoi; Dai, Huixiong; Ngai, Christopher S.; Stolfi, Michael; Diehl, Daniel L.

    2017-10-01

    Extending extreme ultraviolet (EUV) single exposure patterning to its limits requires more than photoresist development. The hardmask film is a key contributor in the patterning stack that offers opportunities to enhance lithographic process window, increase pattern transfer efficiency, and decrease defectivity when utilizing very thin film stacks. This paper introduces the development of amorphous silicon (a-Si) deposited through physical vapor deposited (PVD) as an alternative to a silicon ARC (SiARC) or silicon-oxide-type EUV hardmasks in a typical trilayer patterning scheme. PVD offers benefits such as lower deposition temperature, and higher purity, compared to conventional chemical vapor deposition (CVD) techniques. In this work, sub-36nm pitch line-space features were resolved with a positive-tone organic chemically-amplified resist directly patterned on PVD a-Si, without an adhesion promotion layer and without pattern collapse. Pattern transfer into the underlying hardmask stack was demonstrated, allowing an evaluation of patterning metrics related to resolution, pattern transfer fidelity, and film defectivity for PVD a-Si compared to a conventional tri-layer patterning scheme. Etch selectivity and the scalability of PVD a-Si to reduce the aspect ratio of the patterning stack will also be discussed.

  1. Comparison of ring artifact removal methods using flat panel detector based CT images

    Science.gov (United States)

    2011-01-01

    Background Ring artifacts are the concentric rings superimposed on the tomographic images often caused by the defective and insufficient calibrated detector elements as well as by the damaged scintillator crystals of the flat panel detector. It may be also generated by objects attenuating X-rays very differently in different projection direction. Ring artifact reduction techniques so far reported in the literature can be broadly classified into two groups. One category of the approaches is based on the sinogram processing also known as the pre-processing techniques and the other category of techniques perform processing on the 2-D reconstructed images, recognized as the post-processing techniques in the literature. The strength and weakness of these categories of approaches are yet to be explored from a common platform. Method In this paper, a comparative study of the two categories of ring artifact reduction techniques basically designed for the multi-slice CT instruments is presented from a common platform. For comparison, two representative algorithms from each of the two categories are selected from the published literature. A very recently reported state-of-the-art sinogram domain ring artifact correction method that classifies the ring artifacts according to their strength and then corrects the artifacts using class adaptive correction schemes is also included in this comparative study. The first sinogram domain correction method uses a wavelet based technique to detect the corrupted pixels and then using a simple linear interpolation technique estimates the responses of the bad pixels. The second sinogram based correction method performs all the filtering operations in the transform domain, i.e., in the wavelet and Fourier domain. On the other hand, the two post-processing based correction techniques actually operate on the polar transform domain of the reconstructed CT images. The first method extracts the ring artifact template vector using a homogeneity

  2. Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

    Czech Academy of Sciences Publication Activity Database

    Krivyakin, G.K.; Volodin, V.; Kochubei, S.A.; Kamaev, G.N.; Purkrt, Adam; Remeš, Zdeněk; Fajgar, Radek; Stuchlíková, The-Ha; Stuchlík, Jiří

    2016-01-01

    Roč. 50, č. 7 (2016), s. 935-940 ISSN 1063-7826 R&D Projects: GA MŠk LH12236 Institutional support: RVO:68378271 ; RVO:67985858 Keywords : hydrogenated amorphous silicon * nanocrystals * laser annealing Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.602, year: 2016

  3. A COMPARISON OF THE ENVIRONMENTAL IMPACT OF SOLAR POWER GENERATION USING MULTICRYSTALLINE SILICON AND THIN FILM OF AMORPHOUS SILICON SOLAR CELLS: CASE STUDY IN THAILAND

    Directory of Open Access Journals (Sweden)

    Wasin Khaenson

    2017-07-01

    Full Text Available This paper studies the environmental impact of two different forms of solar power generation in Thailand - that of multicrystalline silicon solar cells, and that of thin film amorphous silicon solar cells. It takes as its study two of the largest solar cell power plants of their kind in Thailand; a multicrystalline silicon plant in the north (generating 90 MW and a thin film amorphous silicon plant in the centre (generating 55 MW. The Life Cycle Assessment tool (LCA was used to assess the environmental impact of each stage of the process, from the manufacture of the cells, through to their transportation, installation and eventual recycling. The functional unit of the study was the generation of 1 kWh of power transmitted and distributed by the Electricity Generating Authority of Thailand (EGAT and Provincial Electricity Authority (PEA. The environmental impact results were calculated in terms of eco-points (Pt per functional unit of 1 kWh. The characterised data for 1 kWh of solar power generation was then compared with data for 1 kWh of combined cycle and thermal power generation (both in Thailand, using the same set of characterisation factors. After analyzing the results, both forms of solar power energy generation were found to impact upon the studied categories of Human Health, Ecosystem Quality and Resource Depletion, whilst also highlighting the importance of the solar cell module recycling process in decreasing the overall environmental impact. When the two solar cell technologies were compared, the overall impact of the multicrystalline silicon solar cell was found to be higher than that of the thin film amorphous silicon solar cell. Furthermore, when assessing the overall impact against non-renewable power generating technologies such as combined cycle and thermal power generation, the thin film amorphous silicon solar cells were found to have the lowest environmental impact of all technologies studied.

  4. Source strength verification and quality assurance of preloaded brachytherapy needles using a CMOS flat panel detector.

    Science.gov (United States)

    Golshan, Maryam; Spadinger, Ingrid; Chng, Nick

    2016-06-01

    Current methods of low dose rate brachytherapy source strength verification for sources preloaded into needles consist of either assaying a small number of seeds from a separate sample belonging to the same lot used to load the needles or performing batch assays of a subset of the preloaded seed trains. Both of these methods are cumbersome and have the limitations inherent to sampling. The purpose of this work was to investigate an alternative approach that uses an image-based, autoradiographic system capable of the rapid and complete assay of all sources without compromising sterility. The system consists of a flat panel image detector, an autoclavable needle holder, and software to analyze the detected signals. The needle holder was designed to maintain a fixed vertical spacing between the needles and the image detector, and to collimate the emissions from each seed. It also provides a sterile barrier between the needles and the imager. The image detector has a sufficiently large image capture area to allow several needles to be analyzed simultaneously.Several tests were performed to assess the accuracy and reproducibility of source strengths obtained using this system. Three different seed models (Oncura 6711 and 9011 (125)I seeds, and IsoAid Advantage (103)Pd seeds) were used in the evaluations. Seeds were loaded into trains with at least 1 cm spacing. Using our system, it was possible to obtain linear calibration curves with coverage factor k = 1 prediction intervals of less than ±2% near the centre of their range for the three source models. The uncertainty budget calculated from a combination of type A and type B estimates of potential sources of error was somewhat larger, yielding (k = 1) combined uncertainties for individual seed readings of 6.2% for (125)I 6711 seeds, 4.7% for (125)I 9011 seeds, and 11.0% for Advantage (103)Pd seeds. This study showed that a flat panel detector dosimetry system is a viable option for source strength verification in

  5. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    International Nuclear Information System (INIS)

    Mouro, J.; Gualdino, A.; Chu, V.; Conde, J. P.

    2013-01-01

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n + -type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force

  6. Direct and inverse Staebler-Wronski effects observed in carbon-doped hydrogenated amorphous silicon photo-detectors

    International Nuclear Information System (INIS)

    Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Brochero, J.; Calderon, A.; Fernandez, M.G.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Scodellaro, L.; Sobron, M.

    2011-01-01

    The photo-response behaviour of Amorphous Silicon Position Detectors (ASPDs) under prolonged illumination with a 681 nm diode-laser and a 633 nm He-Ne laser is presented. Both direct and inverse Staebler-Wronski effects are observed.

  7. Ultrafast all-optical arithmetic logic based on hydrogenated amorphous silicon microring resonators

    Science.gov (United States)

    Gostimirovic, Dusan; Ye, Winnie N.

    2016-03-01

    For decades, the semiconductor industry has been steadily shrinking transistor sizes to fit more performance into a single silicon-based integrated chip. This technology has become the driving force for advances in education, transportation, and health, among others. However, transistor sizes are quickly approaching their physical limits (channel lengths are now only a few silicon atoms in length), and Moore's law will likely soon be brought to a stand-still despite many unique attempts to keep it going (FinFETs, high-k dielectrics, etc.). This technology must then be pushed further by exploring (almost) entirely new methodologies. Given the explosive growth of optical-based long-haul telecommunications, we look to apply the use of high-speed optics as a substitute to the digital model; where slow, lossy, and noisy metal interconnections act as a major bottleneck to performance. We combine the (nonlinear) optical Kerr effect with a single add-drop microring resonator to perform the fundamental AND-XOR logical operations of a half adder, by all-optical means. This process is also applied to subtraction, higher-order addition, and the realization of an all-optical arithmetic logic unit (ALU). The rings use hydrogenated amorphous silicon as a material with superior nonlinear properties to crystalline silicon, while still maintaining CMOS-compatibility and the many benefits that come with it (low cost, ease of fabrication, etc.). Our method allows for multi-gigabit-per-second data rates while maintaining simplicity and spatial minimalism in design for high-capacity manufacturing potential.

  8. Serially Connected Micro Amorphous Silicon Solar Cells for Compact High-Voltage Sources

    Directory of Open Access Journals (Sweden)

    Jiyoon Nam

    2016-01-01

    Full Text Available We demonstrate a compact amorphous silicon (a-Si solar module to be used as high-voltage power supply. In comparison with the organic solar module, the main advantages of the a-Si solar module are its compatibility with photolithography techniques and relatively high power conversion efficiency. The open circuit voltage of a-Si solar cells can be easily controlled by serially interconnecting a-Si solar cells. Moreover, the a-Si solar module can be easily patterned by photolithography in any desired shapes with high areal densities. Using the photolithographic technique, we fabricate a compact a-Si solar module with noticeable photovoltaic characteristics as compared with the reported values for high-voltage power supplies.

  9. Recombination processes and light-induced defect creation in hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Morigaki, K. [Department of Electrical and Digital-System Engineering, Hiroshima Institute of Technology, Miyake, Saeki-ku (Japan)

    2009-05-15

    Recombination processes of electrons and holes in hydrogenated amorphous silicon (a-Si:H) are reviewed in terms of our model. The long decay component of photoluminescence (PL) and the long decay of light-induced electron spin resonance (LESR) are compared, and it is concluded that radiative centres responsible for the long decay component of PL are not LESR centres that are nonradiative centres. This is consistent with our model. The mechanism of light-induced defect creation in a-Si:H and its kinetics is summarized in terms of our model. The related defects involved in the recombination processes and the light-induced defect creation in a-Si:H are discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Investigation of the degradation of a thin-film hydrogenated amorphous silicon photovoltaic module

    Energy Technology Data Exchange (ETDEWEB)

    van Dyk, E.E.; Audouard, A.; Meyer, E.L. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Woolard, C.D. [Department of Chemistry, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2007-01-23

    The degradation of a thin-film hydrogenated single-junction amorphous silicon (a-Si:H) photovoltaic (PV) module has been studied. We investigated the different modes of electrical and physical degradation of a-Si:H PV modules by employing a degradation and failure assessment procedure used in conjunction with analytical techniques, including, scanning electron microscopy (SEM) and thermogravimetry. This paper reveals that due to their thickness, thin films are very sensitive to the type of degradation observed. Moreover, this paper deals with the problems associated with the module encapsulant, poly(ethylene-co-vinylacetate) (EVA). The main objective of this study was to establish the influence of outdoor environmental conditions on the performance of a thin-film PV module comprising a-Si:H single-junction cells. (author)

  11. Direct measurements of the velocity and thickness of ''explosively'' propagating buried molten layers in amorphous silicon

    International Nuclear Information System (INIS)

    Lowndes, D.H.; Jellison, G.E. Jr.; Pennycook, S.J.; Withrow, S.P.; Mashburn, D.N.

    1986-01-01

    Simultaneous infrared (1152 nm) and visible (633 nm) reflectivity measurements with nanosecond resolution were used to study the initial formation and subsequent motion of pulsed KrF laser-induced ''explosively'' propagating buried molten layers in ion implantation-amorphized silicon. The buried layer velocity decreases with depth below the surface, but increases with KrF laser energy density; a maximum velocity of about 14 m/s was observed, implying an undercooling-velocity relationship of approx. 14 K/(m/s). Z-contrast scanning transmission electron microscopy was used to form a direct chemical image of implanted Cu ions transported by the buried layer and showed that the final buried layer thickness was <15 nm

  12. Simultaneous depth profiling of constituents and impurities by elastic proton scattering in amorphous hydrogenated silicon films

    Science.gov (United States)

    Schwarz, R.; Kolodzey, J. S.; Wagner, S.; Kouzes, R. T.

    1987-01-01

    Depth profiles of various constituents and impurities of thin films were obtained simultaneously by a nuclear coincidence method. The energy spectrum of elastically scattered 12 MeV protons, measured by a high-resolution magnetic spectrometer, was used for constituent identification and total content determination. Constituents of interest were selected by software pulse height discrimination and their depth profiles were obtained from the recoil energy spectrum, measured by a surface barrier detector telescope. Thin films of Teflon, of carbon, and of amorphous hydrogenated silicon were measured. The best possible depth resolution is about 20 nm for carbon and is limited by the beam energy spread and the energy resolution of the solid state detectors.

  13. Acoustically induced optical second harmonic generation in hydrogenated amorphous silicon films

    CERN Document Server

    Ebothe, J; Cabarrocas, P R I; Godet, C; Equer, B

    2003-01-01

    Acoustically induced second harmonic generation (AISHG) in hydrogenated amorphous silicon (a-Si : H) films of different morphology has been observed. We have found that with increasing acoustical power, the optical SHG of Gd : YAB laser light (lambda = 2.03 mu m) increases and reaches its maximum value at an acoustical power density of about 2.10 W cm sup - sup 2. With decreasing temperature, the AISHG signal strongly increases below 48 K and correlates well with the temperature behaviour of differential scanning calorimetry indicating near-surface temperature phase transition. The AISHG maxima were observed at acoustical frequencies of 10-11, 14-16, 20-22 and 23-26 kHz. The independently performed measurements of the acoustically induced IR spectra have shown that the origin of the observed phenomenon is the acoustically induced electron-phonon anharmonicity in samples of different morphology.

  14. Clinical investigation of flat panel CT following middle ear reconstruction: a study of 107 patients

    Energy Technology Data Exchange (ETDEWEB)

    Zaoui, K. [University Hospital Heidelberg, Ruprecht Karls University, Department of Otorhinolaryngology, Head and Neck Surgery, Heidelberg (Germany); Kromeier, J. [St. Josefs Hospital, RkK, Department of Radiology, Freiburg (Germany); Neudert, M.; Beleites, T.; Zahnert, T. [University Hospital Dresden, Technical University, Department of Otorhinolaryngology, Head and Neck Surgery, Dresden (Germany); Laszig, R.; Offergeld, C. [University Hospital Freiburg, Albert Ludwigs University, Department of Otorhinolaryngology, Head and Neck Surgery, Freiburg (Germany)

    2014-03-15

    After middle ear reconstruction using partial or total ossicular replacement prostheses (PORP/TORP), an air-bone gap (ABG) may persist because of prosthesis displacement or malposition. So far, CT of the temporal bone has played the main role in the diagnosis of reasons for postoperative insufficient ABG improvement. Recent experimental and clinical studies have evaluated flat panel CT (fpCT) as an alternative imaging technique that provides images with high isovolumetric resolution, fewer metal-induced artefacts and lower irradiation doses. One hundred and seven consecutive patients with chronic otitis media with or without cholesteatoma underwent reconstruction by PORP (n = 52) or TORP (n = 55). All subjects underwent preoperative and postoperative audiometric testing and postoperative fpCT. Statistical evaluation of all 107 patients as well as the sole sub-assembly groups (PORP or TORP) showed a highly significant correlation between hearing improvement and fpCT-determined prosthesis position. FpCT enables detailed postoperative information on patients with middle ear reconstruction. FpCT is a new imaging technique that provides immediate feedback on surgical results after reconstructive middle ear surgery. Specific parameters evaluated by fpCT may serve as a predictive tool for estimated postoperative hearing improvement. Therefore this imaging technique is suitable for postoperative quality control in reconstructive middle ear surgery. (orig.)

  15. Technical trends of large-size photomasks for flat panel displays

    Science.gov (United States)

    Yoshida, Koichiro

    2017-06-01

    Currently, flat panel displays (FPDs) are one of the main parts for information technology devices and sets. From 1990's to 2000's, liquid crystal displays (LCDs) and plasma displays had been mainstream FPDs. In the middle of 2000's, demand of plasma displays declined and organic light emitting diodes (OLEDs) newly came into FPD market. And today, major technology of FPDs are LCDs and OLEDs. Especially for mobile devices, the penetration of OLEDs is remarkable. In FPDs panel production, photolithography is the key technology as same as LSI. Photomasks for FPDs are used not only as original master of circuit pattern, but also as a tool to form other functional structures of FPDs. Photomasks for FPDs are called as "Large Size Photomasks(LSPMs)", since the remarkable feature is " Size" which reaches over 1- meter square and over 100kg. In this report, we discuss three LSPMs technical topics with FPDs technical transition and trend. The first topics is upsizing of LSPMs, the second is the challenge for higher resolution patterning, and the last is "Multi-Tone Mask" for "Half -Tone Exposure".

  16. Practical expressions describing detective quantum efficiency in flat-panel detectors

    Science.gov (United States)

    Kim, H. K.

    2011-11-01

    In radiology, image quality excellence is a balance between system performance and patient dose, hence x-ray systems must be designed to ensure the maximum image quality is obtained for the lowest consistent dose. The concept of detective quantum efficiency (DQE) is widely used to quantify, understand, measure, and predict the performance of x-ray detectors and imaging systems. Cascaded linear-systems theory can be used to estimate DQE based on the system design parameters and this theoretical DQE can be utilized for determining the impact of various physical processes, such as secondary quantum sinks, noise aliasing, reabsorption noise, and others. However, the prediction of DQE usually requires tremendous efforts to determine each parameter consisting of the cascaded linear-systems model. In this paper, practical DQE formalisms assessing both the photoconductor- and scintillator-based flat-panel detectors under quantum-noise-limited operation are described. The developed formalisms are experimentally validated and discussed for their limits. The formalisms described in this paper would be helpful for the rapid prediction of the DQE performances of developing systems as well as the optimal design of systems.

  17. Potential Applications of Flat-Panel Volumetric CT in Morphologic, Functional Small Animal Imaging

    Directory of Open Access Journals (Sweden)

    Susanne Greschus

    2005-08-01

    Full Text Available Noninvasive radiologic imaging has recently gained considerable interest in basic, preclinical research for monitoring disease progression, therapeutic efficacy. In this report, we introduce flat-panel volumetric computed tomography (fpVCT as a powerful new tool for noninvasive imaging of different organ systems in preclinical research. The three-dimensional visualization that is achieved by isotropic high-resolution datasets is illustrated for the skeleton, chest, abdominal organs, brain of mice. The high image quality of chest scans enables the visualization of small lung nodules in an orthotopic lung cancer model, the reliable imaging of therapy side effects such as lung fibrosis. Using contrast-enhanced scans, fpVCT displayed the vascular trees of the brain, liver, kidney down to the subsegmental level. Functional application of fpVCT in dynamic contrast-enhanced scans of the rat brain delivered physiologically reliable data of perfusion, tissue blood volume. Beyond scanning of small animal models as demonstrated here, fpVCT provides the ability to image animals up to the size of primates.

  18. Flat panel CT following stapes prosthesis insertion: an experimental and clinical study

    Energy Technology Data Exchange (ETDEWEB)

    Zaoui, K. [University-Hospital Heidelberg, Ludwig-Karls-University Heidelberg, Department of Otorhinolaryngology, Head and Neck Surgery, Heidelberg (Germany); Kromeier, J. [St.-Josefs-Hospital, RkK, Department of Radiology, Freiburg (Germany); Neudert, M.; Zahnert, T. [University-Hospital Dresden, Technical-University Dresden, Department of Otorhinolaryngology, Head and Neck Surgery, Dresden (Germany); Boedeker, C.C.; Laszig, R.; Offergeld, C. [University-Hospital Freiburg, Albert-Ludwigs-University Freiburg, Department of Otorhinolaryngology, Head and Neck Surgery, Freiburg (Germany)

    2012-04-15

    Anatomical information of the middle and inner ear is becoming increasingly important in post-operative evaluation especially after stapesplasty with unsuccessful improvement of the air-bone gap (ABG). So far computed tomography (CT) has been the first choice for detection of reasons for recurrent hearing loss. CT has the disadvantage of metal-induced artefacts after insertion of middle ear implants and of a relatively high irradiation dose. Flat panel CT (fpCT) was performed in three temporal bone specimen after experimental insertion of different stapes prostheses, aiming to validate the accuracy of fpCT of the middle and inner ear. Additionally, 28 consecutive patients, supplied with different stapes prostheses underwent post-operative fpCT to compare the pre- and post-operative hearing results with the determined prosthesis position in the middle and inner ear. In all cases, fpCT showed a statistically significant correlation between hearing improvement and prosthesis position. This technique provided detailed post-operative information of the implant position in patients and temporal bone specimen. The new imaging technique of fpCT allows the immediate and almost artefact-free evaluation of surgical results following stapesplasty. Further benefits are a lower irradiation dose and higher isovolumetric resolution compared with standard CT. (orig.)

  19. Astaxanthin induction in Microalga H. pluvialis with flat panel airlift photobioreactors under indoor and outdoor conditions.

    Science.gov (United States)

    Poonkum, Woradej; Powtongsook, Sorawit; Pavasant, Prasert

    2015-01-01

    Astaxanthin was induced from Haematococcus pluvialis (NIES-144) under indoor and outdoor conditions using 17-, 50-, and 90-L flat-panel airlift photobioreactors (FP-APBRs). Preliminary experiments in 1.5-L bubble column photobioreactors (BC-PBRs) revealed that sterilized clean water with 3% CO2 aeration (1.47 cm(3) s(-1) CO2 loading) could best encourage astaxanthin accumulation at 18.21 g m(-3) (3.63% by weight). Operating 17-L FP-APBRs with these bubble column parameters under indoor conditions could further enhance astaxanthin to 26.63 g m(-3) (5.34% by weight). This was potentially due to the inherited up-lift force from the reactor that helped avoid cell precipitation by allowing the cells to be circulated within the reactor. In addition, the various sizes of FP-APBRs exhibited similar performance, implying a potential scale-up opportunity. However, similar operation under outdoor condition exhibited slightly poorer performance due to the light inhibition effect. The best outdoor performance was obtained with the FP-APBR covered with one layer of shading net, where 20.11 g m(-3) (4.47% by weight) of astaxanthin was resulted.

  20. Continuous production of diatom Entomoneis sp. in mechanically stirred tank and flat-panel airlift photobioreactors.

    Science.gov (United States)

    Viriyayingsiri, Thunyaporn; Sittplangkoon, Pantaporn; Powtongsook, Sorawit; Nootong, Kasidit

    2016-10-02

    Continuous production of diatom Entomonies sp. was performed in mechanically stirred tank and flat-panel airlift photobioreactors (FPAP). The maximum specific growth rate of diatom from the batch experiment was 0.98 d(-1). A series of dilution rate and macronutrient concentration adjustments were performed in a stirred tank photobioreactor and found that the dilution rate ranged from 0.7 to 0.8 d(-1) and modified F/2 growth media containing nitrate at 3.09 mg N/L, phosphate at 2.24 mg P/L, and silicate at 11.91 mg Si/L yielded the maximum cell number density. Finally, the continuous cultivation of Entomonies sp. was conducted in FPAP using the optimal conditions determined earlier, resulting in the maximum cell number density of 19.69 × 10(4) cells/mL, which was approximately 47 and 73% increase from the result using the stirred tank photobioreactor fed with modified and standard F/2 growth media, respectively.

  1. Modeling Microalgae Productivity in Industrial-Scale Vertical Flat Panel Photobioreactors.

    Science.gov (United States)

    Endres, Christian Hermann; Roth, Arne; Brück, Thomas Bartholomaeus

    2018-03-29

    Potentially achievable biomass yields are a decisive performance indicator for the economic viability of mass cultivation of microalgae. In this study, a computer model has been developed and applied to estimate the productivity of microalgae for large-scale outdoor cultivation in vertical flat panel photobioreactors. Algae growth is determined based on simulations of the reactor temperature and light distribution. Site-specific weather and irradiation data are used for annual yield estimations in six climate zones. Shading and reflections between opposing panels and between panels and the ground are dynamically computed based on the reactor geometry and the position of the sun. The results indicate that thin panels (≤ 0.05 m) are best suited for the assumed cell density of 2 g L -1 and that reactor panels should face in north-south direction. Panel spacings of 0.4 - 0.75 m appear most suitable for commercial applications. Under these preconditions, yields of around 10 kg m -2 a -1 are possible for most locations in the U.S. Only in hot climates significantly lower yields have to be expected, as extreme reactor temperatures limit overall productivity.

  2. Pixel electronic noise as a function of position in an active matrix flat panel imaging array

    Science.gov (United States)

    Yazdandoost, Mohammad Y.; Wu, Dali; Karim, Karim S.

    2010-04-01

    We present an analysis of output referred pixel electronic noise as a function of position in the active matrix array for both active and passive pixel architectures. Three different noise sources for Active Pixel Sensor (APS) arrays are considered: readout period noise, reset period noise and leakage current noise of the reset TFT during readout. For the state-of-the-art Passive Pixel Sensor (PPS) array, the readout noise of the TFT switch is considered. Measured noise results are obtained by modeling the array connections with RC ladders on a small in-house fabricated prototype. The results indicate that the pixels in the rows located in the middle part of the array have less random electronic noise at the output of the off-panel charge amplifier compared to the ones in rows at the two edges of the array. These results can help optimize for clearer images as well as help define the region-of-interest with the best signal-to-noise ratio in an active matrix digital flat panel imaging array.

  3. Clinical investigation of flat panel CT following middle ear reconstruction: a study of 107 patients

    International Nuclear Information System (INIS)

    Zaoui, K.; Kromeier, J.; Neudert, M.; Beleites, T.; Zahnert, T.; Laszig, R.; Offergeld, C.

    2014-01-01

    After middle ear reconstruction using partial or total ossicular replacement prostheses (PORP/TORP), an air-bone gap (ABG) may persist because of prosthesis displacement or malposition. So far, CT of the temporal bone has played the main role in the diagnosis of reasons for postoperative insufficient ABG improvement. Recent experimental and clinical studies have evaluated flat panel CT (fpCT) as an alternative imaging technique that provides images with high isovolumetric resolution, fewer metal-induced artefacts and lower irradiation doses. One hundred and seven consecutive patients with chronic otitis media with or without cholesteatoma underwent reconstruction by PORP (n = 52) or TORP (n = 55). All subjects underwent preoperative and postoperative audiometric testing and postoperative fpCT. Statistical evaluation of all 107 patients as well as the sole sub-assembly groups (PORP or TORP) showed a highly significant correlation between hearing improvement and fpCT-determined prosthesis position. FpCT enables detailed postoperative information on patients with middle ear reconstruction. FpCT is a new imaging technique that provides immediate feedback on surgical results after reconstructive middle ear surgery. Specific parameters evaluated by fpCT may serve as a predictive tool for estimated postoperative hearing improvement. Therefore this imaging technique is suitable for postoperative quality control in reconstructive middle ear surgery. (orig.)

  4. Dynamic flat panel detector versus image intensifier in cardiac imaging: dose and image quality

    Science.gov (United States)

    Vano, E.; Geiger, B.; Schreiner, A.; Back, C.; Beissel, J.

    2005-12-01

    The practical aspects of the dosimetric and imaging performance of a digital x-ray system for cardiology procedures were evaluated. The system was configured with an image intensifier (II) and later upgraded to a dynamic flat panel detector (FD). Entrance surface air kerma (ESAK) to phantoms of 16, 20, 24 and 28 cm of polymethyl methacrylate (PMMA) and the image quality of a test object were measured. Images were evaluated directly on the monitor and with numerical methods (noise and signal-to-noise ratio). Information contained in the DICOM header for dosimetry audit purposes was also tested. ESAK values per frame (or kerma rate) for the most commonly used cine and fluoroscopy modes for different PMMA thicknesses and for field sizes of 17 and 23 cm for II, and 20 and 25 cm for FD, produced similar results in the evaluated system with both technologies, ranging between 19 and 589 µGy/frame (cine) and 5 and 95 mGy min-1 (fluoroscopy). Image quality for these dose settings was better for the FD version. The 'study dosimetric report' is comprehensive, and its numerical content is sufficiently accurate. There is potential in the future to set those systems with dynamic FD to lower doses than are possible in the current II versions, especially for digital cine runs, or to benefit from improved image quality.

  5. Contrast-detail analysis of three flat panel detectors for digital radiography

    International Nuclear Information System (INIS)

    Borasi, Giovanni; Samei, Ehsan; Bertolini, Marco; Nitrosi, Andrea; Tassoni, Davide

    2006-01-01

    In this paper we performed a contrast detail analysis of three commercially available flat panel detectors, two based on the indirect detection mechanism (GE Revolution XQ/i, system A, and Trixell/Philips Pixium 4600, system B) and one based on the direct detection mechanism (Hologic DirectRay DR 1000, system C). The experiment was conducted using standard x-ray radiation quality and a widely used contrast-detail phantom. Images were evaluated using a four alternative forced choice paradigm on a diagnostic-quality softcopy monitor. At the low and intermediate exposures, systems A and B gave equivalent performances. At the high dose levels, system A performed better than system B in the entire range of target sizes, even though the pixel size of system A was about 40% larger than that of system B. At all the dose levels, the performances of the system C (direct system) were lower than those of system A and B (indirect systems). Theoretical analyses based on the Perception Statistical Model gave similar predicted SNR T values corresponding to an observer efficiency of about 0.08 for systems A and B and 0.05 for system C

  6. Dynamic chest radiography: flat-panel detector (FPD) based functional X-ray imaging.

    Science.gov (United States)

    Tanaka, Rie

    2016-07-01

    Dynamic chest radiography is a flat-panel detector (FPD)-based functional X-ray imaging, which is performed as an additional examination in chest radiography. The large field of view (FOV) of FPDs permits real-time observation of the entire lungs and simultaneous right-and-left evaluation of diaphragm kinetics. Most importantly, dynamic chest radiography provides pulmonary ventilation and circulation findings as slight changes in pixel value even without the use of contrast media; the interpretation is challenging and crucial for a better understanding of pulmonary function. The basic concept was proposed in the 1980s; however, it was not realized until the 2010s because of technical limitations. Dynamic FPDs and advanced digital image processing played a key role for clinical application of dynamic chest radiography. Pulmonary ventilation and circulation can be quantified and visualized for the diagnosis of pulmonary diseases. Dynamic chest radiography can be deployed as a simple and rapid means of functional imaging in both routine and emergency medicine. Here, we focus on the evaluation of pulmonary ventilation and circulation. This review article describes the basic mechanism of imaging findings according to pulmonary/circulation physiology, followed by imaging procedures, analysis method, and diagnostic performance of dynamic chest radiography.

  7. Effect of back reflectors on photon absorption in thin-film amorphous silicon solar cells

    Science.gov (United States)

    Hossain, Mohammad I.; Qarony, Wayesh; Hossain, M. Khalid; Debnath, M. K.; Uddin, M. Jalal; Tsang, Yuen Hong

    2017-10-01

    In thin-film solar cells, the photocurrent conversion productivity can be distinctly boosted-up utilizing a proper back reflector. Herein, the impact of different smooth and textured back reflectors was explored and effectuated to study the optical phenomena with interface engineering strategies and characteristics of transparent contacts. A unique type of wet-chemically textured glass-substrate 3D etching mask used in superstrate (p-i-n) amorphous silicon-based solar cell along with legitimated back reflector permits joining the standard light-trapping methodologies, which are utilized to upgrade the energy conversion efficiency (ECE). To investigate the optical and electrical properties of solar cell structure, the optical simulations in three-dimensional measurements (3D) were performed utilizing finite-difference time-domain (FDTD) technique. This design methodology allows to determine the power losses, quantum efficiencies, and short-circuit current densities of various layers in such solar cell. The short-circuit current densities for different reflectors were varied from 11.50 to 13.27 and 13.81 to 16.36 mA/cm2 for the smooth and pyramidal textured solar cells, individually. Contrasted with the comparable flat reference cell, the short-circuit current density of textured solar cell was increased by around 24%, and most extreme outer quantum efficiencies rose from 79 to 86.5%. The photon absorption was fundamentally improved in the spectral region from 600 to 800 nm with no decrease of photocurrent shorter than 600-nm wavelength. Therefore, these optimized designs will help to build the effective plans next-generation amorphous silicon-based solar cells.

  8. Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures

    KAUST Repository

    Mughal, Asad Jahangir

    2014-01-01

    Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material\\'s luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon. This journal is

  9. Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures.

    Science.gov (United States)

    Mughal, A; El Demellawi, J K; Chaieb, Sahraoui

    2014-12-14

    Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material's luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon.

  10. Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD

    CERN Document Server

    Pereyra, I; Carreno, M N P; Prado, R J; Fantini, M C A

    2000-01-01

    We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-Si C chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H sub 2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-Si C by the RF-PECVD technique. Doping experiments were also performed on ordered material using phosphorus and nitrogen as donor impurities and boron and aluminum as acceptor ones. For nitrogen a doping efficiency close to device quality a-Si:H was obtained, the lower activation energy being 0,12 eV with room temperature dark conductivity of 2.10 sup - sup 3 (OMEGA.cm). Nitrogen doping efficiency was higher than phosphorous for all studied samples. For p-type doping, results indicate that, even though the attained conductivity values are not device levels, aluminum doping conducted to a promising shift in the Fermi level. Also, aluminum resulted a more efficie...

  11. Performance and stability of low temperature hydrogenated amorphous silicon thin film transistors fabricated on stainless steel substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sung Hwan; Kim, Sung Ki; Lee, Jong-Kwon; Lee, Seok-Woo; Lee, Hong Koo; Peak, Seung Han; Park, Yong-In; Kim, Chang-Dong; Hwang, Yong Kee; Chung, In-Jae [LG Display R and D Center, Paju, Gyongki-do, 413-811 (Korea)

    2010-04-15

    The key development issues in the flexible displays are TFT backplane technology, which requires competitive device performance and low temperature process compatible with flexible substrate. Here, we have fabricated low temperature hydrogenated amorphous silicon thin film transistor on a stainless steel substrate coated with organic barrier layer. Then, we have studied initial device performance by varying plasma gas and pressure conditions at a low power and a low temperature during amorphous silicon and silicon nitride deposition steps. Also, we discuss the stability characteristics of this low temperature processed thin film transistor, which reveals enough possibility for use in flexible display applications. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Amorphous and microcrystalline silicon applied in very thin tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schicho, Sandra

    2011-07-28

    Thin-film solar cells are fabricated by low-cost production processes, and are therefore an alternative to conventionally used wafer solar cells based on crystalline silicon. Due to the different band gaps, tandem cells that consist of amorphous (a-Si:H) and microcrystalline ({mu}c-Si:H) single junction solar cells deposited on top of each other use the solar spectrum much more efficient than single junction solar cells. The silicon layers are usually deposited on TCO (Transparent Conductive Oxide)-coated glass and metal- or plastic foils. Compared to the CdTe and CIGS based thin-film technologies, silicon thin-film solar cells have the advantage that no limitation of raw material supply is expected and no toxic elements are used. Nevertheless, the production cost per Wattpeak is the decisive factor concerning competitiveness and can be reduced by, e.g., shorter deposition times or reduced material consumption. Both cost-reducing conceptions are simultaneously achieved by reducing the a-Si:H and {mu}c-Si:H absorber layer thicknesses in a tandem device. In the work on hand, the influence of an absorber layer thickness reduction up to 77% on the photovoltaic parameters of a-Si:H/{mu}c-Si:H tandem solar cells was investigated. An industry-oriented Radio Frequency Plasma-Enhanced Chemical Vapour Deposition (RF-PECVD) system was used to deposit the solar cells on glass substrates coated with randomly structured TCO layers. The thicknesses of top and bottom cell absorber layers were varied by adjusting the deposition time. Reduced layer thicknesses lead to lower absorption and, hence, to reduced short-circuit current densities which, however, are partially balanced by higher open-circuit voltages and fill factors. Furthermore, by using very thin amorphous top cells, the light-induced degradation decreases tremendously. Accordingly, a thickness reduction of 75% led to an efficiency loss of only 21 %. By adjusting the parameters for the deposition of a-Si:H top cells, a

  13. Device and material characterization and analytic modeling of amorphous silicon thin film transistors

    Science.gov (United States)

    Slade, Holly Claudia

    Hydrogenated amorphous silicon thin film transistors (TFTs) are now well-established as switching elements for a variety of applications in the lucrative electronics market, such as active matrix liquid crystal displays, two-dimensional imagers, and position-sensitive radiation detectors. These applications necessitate the development of accurate characterization and simulation tools. The main goal of this work is the development of a semi- empirical, analytical model for the DC and AC operation of an amorphous silicon TFT for use in a manufacturing facility to improve yield and maintain process control. The model is physically-based, in order that the parameters scale with gate length and can be easily related back to the material and device properties. To accomplish this, extensive experimental data and 2D simulations are used to observe and quantify non- crystalline effects in the TFTs. In particular, due to the disorder in the amorphous network, localized energy states exist throughout the band gap and affect all regimes of TFT operation. These localized states trap most of the free charge, causing a gate-bias-dependent field effect mobility above threshold, a power-law dependence of the current on gate bias below threshold, very low leakage currents, and severe frequency dispersion of the TFT gate capacitance. Additional investigations of TFT instabilities reveal the importance of changes in the density of states and/or back channel conduction due to bias and thermal stress. In the above threshold regime, the model is similar to the crystalline MOSFET model, considering the drift component of free charge. This approach uses the field effect mobility to take into account the trap states and must utilize the correct definition of threshold voltage. In the below threshold regime, the density of deep states is taken into account. The leakage current is modeled empirically, and the parameters are temperature dependent to 150oC. The capacitance of the TFT can be

  14. Predicting the performance of amorphous and crystalline silicon based photovoltaic solar thermal collectors

    International Nuclear Information System (INIS)

    Daghigh, Ronak; Ibrahim, Adnan; Jin, Goh Li; Ruslan, Mohd Hafidz; Sopian, Kamaruzzaman

    2011-01-01

    BIPVT is an application where solar PV/T modules are integrated into the building structure. System design parameters such as thermal conductivity and fin efficiency, type of cells, type of coolant and operating conditions are factors which influence the performance of BIPVT. Attempts have been made to improve the efficiency of building-integrated photovoltaic thermal (BIPVT). A new design concept of water-based PVT collector for building-integrated applications has been designed and evaluated. The results of simulation study of amorphous silicon (a-Si) PV/T and crystalline silicon (c-Si) module types are based on the metrological condition of Malaysia for a typical day in March. At a flow rate of 0.02 kg/s, solar radiation level between 700 and 900 W/m 2 and ambient temperature between 22 and 32 o C, the electrical, thermal and combined photovoltaic thermal efficiencies for the PV/T (a-Si) were 4.9%, 72% and 77%, respectively. Moreover, the electrical, thermal and combined photovoltaic thermal efficiencies of the PV/T (c-Si) were 11.6%, 51% and 63%.

  15. Microstructure from joint analysis of experimental data and ab initio interactions: Hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Biswas, Parthapratim, E-mail: Partha.Biswas@usm.edu [Department of Physics and Astronomy, The University of Southern Mississippi, Hattiesburg, MS 39406 (United States); Department of Physics and Astronomy, Condensed Matter and Surface Science Program, Ohio University, Ohio 45701 (United States); Drabold, D. A., E-mail: drabold@ohio.edu [Department of Physics and Astronomy, Condensed Matter and Surface Science Program, Ohio University, Ohio 45701 (United States); Atta-Fynn, Raymond, E-mail: attafynn@uta.edu [Department of Physics, The University of Texas, Arlington, Texas 76019 (United States)

    2014-12-28

    A study of the formation of voids and molecular hydrogen in hydrogenated amorphous silicon is presented based upon a hybrid approach that involves inversion of experimental nuclear magnetic resonance data in conjunction with ab initio total-energy relaxations in an augmented solution space. The novelty of this approach is that the voids and molecular hydrogen appear naturally in the model networks unlike conventional approaches, where voids are created artificially by removing silicon atoms from the networks. Two representative models with 16 and 18 at. % of hydrogen are studied in this work. The result shows that the microstructure of the a-Si:H network consists of several microvoids and few molecular hydrogen for concentration above 15 at. % H. The microvoids are highly irregular in shape and size, and have a linear dimension of 5–7 Å. The internal surface of a microvoid is found to be decorated with 4–9 hydrogen atoms in the form of monohydride Si–H configurations as observed in nuclear magnetic resonance experiments. The microstructure consists of (0.9–1.4)% hydrogen molecules of total hydrogen in the networks. These observations are consistent with the outcome of infrared spectroscopy, nuclear magnetic resonance, and calorimetry experiments.

  16. Low temperature deposition of crystalline silicon on glass by hot wire chemical vapor deposition

    Science.gov (United States)

    Chung, Yung-Bin; Park, Hyung-Ki; Lee, Dong-Kwon; Jo, Wook; Song, Jean-Ho; Lee, Sang-Hoon; Hwang, Nong-Moon

    2011-07-01

    Although the deposition of crystalline silicon on a glass substrate has been pursued using hot wire chemical vapor deposition or plasma enhanced chemical vapor deposition for applications in flat panel displays and solar cells, the process has been only partly successful because of the inevitable formation of an amorphous incubation layer on a glass substrate. Currently, the crystalline silicon films are prepared by depositing an amorphous silicon film on a glass substrate and then crystallizing it by excimer laser annealing (ELA), metal induced crystallization or rapid thermal annealing (RTA). Here we report a new process, which can remove the amorphous incubation layer and thereby deposit crystalline silicon directly on glass using HCl. The intrinsic crystalline silicon film has a conductivity of 3.7×10 -5 Scm -1 and the n-type doped crystalline silicon film has the Hall mobility of 15.8 cm 2V -1 s -1, whose values are comparable to those prepared by ELA and RTA, respectively.

  17. Clinical evaluation of digital angiographic system equipped with the Safire' flat-panel detector of a direct conversion type

    International Nuclear Information System (INIS)

    Miura, Yoshiaki; Miura, Yusuke; Goto, Keiichi

    2003-01-01

    This report presents a report on clinical evaluation of our newly developed flat-panel X-ray detector of a direct conversion type, designed to provide images of a resolution higher than, or at least equal to, that ensured by X-ray photographic films, in clinical digital X-ray cinematography. This new detector was named 'Safire' the acronym of 'Shimadzu advanced flat imaging receptor', emphasizing its high technological level, such as the capability to ensure high quality of images. The clinical evaluation of Shimadzu DIGITEX Premier digital angiography system, equipped with this new flat-panel X-ray detector of a direct conversion type, has been started in March, 2003, at the Kokura Memorial Hospital in Kyushu, Japan. (author)

  18. Standard practice for radiologic examination of flat panel composites and sandwich core materials used in aerospace applications

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2009-01-01

    1.1 This practice is intended to be used as a supplement to Practices E 1742, E 1255, and E 2033. 1.2 This practice describes procedures for radiologic examination of flat panel composites and sandwich core materials made entirely or in part from fiber-reinforced polymer matrix composites. Radiologic examination is: a) radiographic (RT) with film, b) Computed Radiography (CR) with Imaging Plate, c) Digital Radiology (DR) with Digital Detector Array’s (DDA), and d) Radioscopic (RTR) Real Time Radiology with a detection system such as an Image Intensifier. The composite materials under consideration typically contain continuous high modulus fibers (> 20 GPa), such as those listed in 1.4. 1.3 This practice describes established radiological examination methods that are currently used by industry that have demonstrated utility in quality assurance of flat panel composites and sandwich core materials during product process design and optimization, process control, after manufacture inspection, in service exami...

  19. Development of flat panel X-ray detector utilizing a CdZnTe film as conversion layer

    International Nuclear Information System (INIS)

    Tokuda, Satoshi; Kishihara, Hiroyuki; Kaino, Masatomo; Sato, Toshiyuki

    2006-01-01

    A polycrystalline CdZnTe film formed by the CSS (closed-spaced sublimation) method is one of the most promising materials as a conversion layer of next-generation highly efficient flat-panel X-ray detectors. Therefore, we have developed a prototype of a new flat-panel X-ray detector (a sensing region of 3 inches by 3 inches) with the film and evaluated its commercial feasibility. This paper describes evaluation of the physical and imaging properties of the prototype and explains the features of the CdZnTe film and the construction, specifications, and fabrication procedures of the prototype. Also included in this paper are formation of a semiconductor thin film barrier layer by the CBD (chemical bath deposition) method and conjunction of a sensor substrate and a TFT array substrate with the bump electrodes formed by screen printing, both of which we have developed during the course of the development of the prototype. (author)

  20. A flat-panel detector based micro-CT system: performance evaluation for small-animal imaging

    Science.gov (United States)

    Lee, Sang Chul; Kim, Ho Kyung; Chun, In Kon; Hye Cho, Myung; Lee, Soo Yeol; Cho, Min Hyoung

    2003-12-01

    A dedicated small-animal x-ray micro computed tomography (micro-CT) system has been developed to screen laboratory small animals such as mice and rats. The micro-CT system consists of an indirect-detection flat-panel x-ray detector with a field-of-view of 120 × 120 mm2, a microfocus x-ray source, a rotational subject holder and a parallel data processing system. The flat-panel detector is based on a matrix-addressed photodiode array fabricated by a CMOS (complementary metal-oxide semiconductor) process coupled to a CsI:Tl (thallium-doped caesium iodide) scintillator as an x-ray-to-light converter. Principal imaging performances of the micro-CT system have been evaluated in terms of image uniformity, voxel noise and spatial resolution. It has been found that the image non-uniformity mainly comes from the structural non-uniform sensitivity pattern of the flat-panel detector and the voxel noise is about 48 CT numbers at the voxel size of 100 × 100 × 200 µm3 and the air kerma of 286 mGy. When the magnification ratio is 2, the spatial resolution of the micro-CT system is about 14 lp/mm (line pairs per millimetre) that is almost determined by the flat-panel detector showing about 7 lp/mm resolving power. Through low-contrast phantom imaging studies, the minimum resolvable contrast has been found to be less than 36 CT numbers at the air kerma of 95 mGy. Some laboratory rat imaging results are presented.

  1. Functional shoulder radiography with use of a dynamic flat panel detector.

    Science.gov (United States)

    Sakuda, Keita; Sanada, Shigeru; Tanaka, Rie; Kitaoka, Katsuhiko; Hayashi, Norio; Matsuura, Yukihiro

    2014-07-01

    Our purpose in this study was to develop a functional form of radiography and to perform a quantitative analysis for the shoulder joint using a dynamic flat panel detector (FPD) system. We obtained dynamic images at a rate of 3.75 frames per second (fps) using an FPD system. Three patients and 5 healthy controls were studied with a clinically established frontal projection, with abduction of the arms. The arm angle, glenohumeral angle (G-angle), and scapulothoracic angle (S-angle) were measured on dynamic images. The ratio of the G-angle to the S-angle (GSR) was also evaluated quantitatively. In normal subjects, the G-angle and S-angle changed gradually along with the arm angle. The G-angle was approximately twice as large as the S-angle, resulting in a GSR of 2 throughout the abduction of the shoulder. Changes in G-angle and S-angle tended to be irregular in patients with shoulder disorders. The GSR of the thoracic outlet syndrome, recurrent dislocation of the shoulder joint, and anterior serratus muscle paralysis were 3-7.5, 4-9.5, and 3.5-7.5, respectively. The GSR of the anterior serratus muscle paralysis improved to approximately 2 after orthopedic treatment. Our preliminary results indicated that functional radiography by FPD and computer-aided quantitative analysis is useful for diagnosis of some shoulder disorders, such as the thoracic outlet syndrome, recurrent dislocation of the shoulder joint, and anterior serratus muscle paralysis. The technique and procedures described comprise a simple, functional shoulder radiographic method for evaluation of the therapeutic effects of surgery and/or rehabilitation.

  2. Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions

    Science.gov (United States)

    Maslova, O. A.; Alvarez, J.; Gushina, E. V.; Favre, W.; Gueunier-Farret, M. E.; Gudovskikh, A. S.; Ankudinov, A. V.; Terukov, E. I.; Kleider, J. P.

    2010-12-01

    Heterojunctions made of hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) are examined by conducting probe atomic force microscopy. Conductive channels at both (n )a-Si:H/(p)c-Si and (p)a-Si:H/(n)c-Si interfaces are clearly revealed. These are attributed to two-dimension electron and hole gases due to strong inversion layers at the c-Si surface in agreement with previous planar conductance measurements. The presence of a hole gas in (p )a-Si:H/(n)c-Si structures implies a quite large valence band offset (EVc-Si-EVa-Si:H>0.25 eV).

  3. Optimizing portal dose calculation for an amorphous silicon detector using Swiss Monte Carlo Plan

    International Nuclear Information System (INIS)

    Frauchiger, D; Fix, M K; Frei, D; Volken, W; Mini, R; Manser, P

    2007-01-01

    Purpose: Modern treatment planning systems (TPS) are able to calculate doses within the patient for numerous delivery techniques as e. g. intensity modulated radiation therapy (IMRT). Even dose predictions to an electronic portal image device (EPID) are available in some TPS, but with limitations in accuracy. With the steadily increasing number of facilities using EPIDs for pre-treatment and treatment verification, the desire of calculating accurate EPID dose distributions is growing. A solution for this problem is the use of Monte Carlo (MC) methods. Aims of this study were firstly to implement geometries of an amorphous silicon based EPID with varying levels of geometry complexity. Secondly to analyze the differences between simulation results and measurements for each geometry. Thirdly, to compare different transport algorithms within all EPID geometries in a flexible C++ MC environment. Materials and Methods: In this work three geometry sets, representing the EPID, are implemented and investigated. To gain flexibility in the MC environment geometry and particle transport code are independent. That allows the user to select between the transport algorithms EGSnrc, VMC++ and PIN (an in-house developed transport code) while using one of the implemented geometries of the EPID. For all implemented EPID geometries dose distributions were calculated for 6 MV and 15 MV beams using different transport algorithms and are then compared with measurements. Results: A very simple geometry, consisting of a water slab, is not capable to reproduce measurements, whereas 8 material layers perform well. The more layers with different materials are used, the longer last the calculations. EGSnrc and VMC++ lead to dosimetrically equal results. Gamma analysis between calculated and measured EPID dose distributions, using a dose difference criterion of ± 3% and a distance to agreement criterion of ± 3 mm, revealed a gamma value < 1 within more than 95% of all pixels, that have a

  4. Hydrogen related crystallization in intrinsic hydrogenated amorphous silicon films prepared by reactive radiofrequency magnetron sputtering at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Senouci, D. [Laboratoire de Genie Physique, Universite Ibn-Khaldoun, 14000 Tiaret (Algeria); LPCMME, Departement de Physique, Universite d' Oran Es-senia, 3100, Oran (Algeria); Baghdad, R., E-mail: r_baghdad@mail.univ-tiaret.dz [Laboratoire de Genie Physique, Universite Ibn-Khaldoun, 14000 Tiaret (Algeria); Belfedal, A.; Chahed, L. [LPCMME, Departement de Physique, Universite d' Oran Es-senia, 3100, Oran (Algeria); Portier, X. [CIMAP, CEA, CNRS UMR 6252-ENSICAEN, UCBN, 6 Bvd Marechal Juin, 14050 Caen Cedex (France); Charvet, S. [LPMC, UFR des Sciences, Universite de Picardie Jules Verne, 33 rue Saint-Leu, 80039 Amiens (France); Kim, K.H. [LPICM, Laboratoire de Physique des Interfaces et Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France); TOTAL S.A., Gas and Power, R and D Division, Courbevoie (France); Roca i Cabarrocas, P. [LPICM, Laboratoire de Physique des Interfaces et Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France); Zellama, K. [LPMC, UFR des Sciences, Universite de Picardie Jules Verne, 33 rue Saint-Leu, 80039 Amiens (France)

    2012-11-01

    We present an investigation on the transition from amorphous to nanocrystalline silicon and associated hydrogen changes during the first steps of hydrogenated nanocrystalline silicon growth for films elaborated by reactive radiofrequency magnetron sputtering at a substrate temperature as low as room temperature and for deposition times varying from 3 to 60 min. Complementary experimental techniques have been used to characterize the films in their as-deposited state. They are completed by thermal hydrogen effusion experiments conducted in the temperature range, from room temperature to 800 Degree-Sign C. The results show that, during the initial stages of growth, the presence of a hydrogen-rich layer is necessary to initiate the crystallization process. - Highlights: Black-Right-Pointing-Pointer Nanocrystalline silicon growth at room temperature. Black-Right-Pointing-Pointer Transition from amorphous to nanocrystalline silicon. Black-Right-Pointing-Pointer Chemical reactions of H atoms with strained Si-Si bonds. Black-Right-Pointing-Pointer H selective etching and chemical transport caused the silicon nucleation.

  5. Structure-Property Relationships in Polymer Derived Amorphous/Nano-Crystalline Silicon Carbide for Nuclear Applications

    International Nuclear Information System (INIS)

    Zunjarrao, Suraj C.; Singh, Abhishek K.; Singh, Raman P.

    2006-01-01

    Silicon carbide (SiC) is a promising candidate for several applications in nuclear reactors owing to its high thermal conductivity, high melting temperature, good chemical stability, and resistance to swelling under heavy ion bombardment. However, fabricating SiC by traditional powder processing route generally requires very high temperatures for pressureless sintering. Polymer derived ceramic materials offer unique advantages such as ability to fabricate net shaped components, incorporate reinforcements and relatively low processing temperatures. Furthermore, for SiC based ceramics fabricated using polymer infiltration process (PIP), the microstructure can be tailored by controlling the processing parameters, to get an amorphous, nanocrystalline or crystalline SiC. In this work, fabrication of polymer derived amorphous and nano-grained SiC is presented and its application as an in-core material is explored. Monolithic SiC samples are fabricated by controlled pyrolysis of allyl-hydrido-poly-carbo-silane (AHPCS) under inert atmosphere. Chemical changes, phase transformations and microstructural changes occurring during the pyrolysis process are studied as a function of the processing temperature. Polymer cross-linking and polymer to ceramic conversion is studied using infrared spectroscopy (FTIR). Thermogravimetric analysis (TGA) and differential thermal analysis (DTA) are performed to monitor the mass loss and phase change as a function of temperature. X-ray diffraction studies are done to study the intermediate phases and microstructural changes. Variation in density is carefully monitored as a function of processing temperature. Owing to shrinkage and gas evolution during pyrolysis, precursor derived ceramics are inherently porous and composite fabrication typically involves repeated cycles of polymer re-infiltration and pyrolysis. However, there is a limit to the densification that can be achieved by this method and porosity in the final materials presents

  6. Irreversible lithium storage during lithiation of amorphous silicon thin film electrodes studied by in-situ neutron reflectometry

    Science.gov (United States)

    Jerliu, Bujar; Hüger, Erwin; Horisberger, Michael; Stahn, Jochen; Schmidt, Harald

    2017-08-01

    Amorphous silicon is a promising high-capacity anode material for application in lithium-ion batteries. However, a huge drawback of the material is that the large capacity losses taking place during cycling lead to an unstable performance. In this study we investigate the capacity losses occurring during galvanostatic lithiation of amorphous silicon thin film electrodes by in-situ neutron reflectometry experiments for the first ten cycles. As determined from the analysis of the neutron scattering length density and of the film thickness, the capacity losses are due to irreversible storage of lithium in the electrode. The amount of stored lithium increases during cycling to 20% of the maximum theoretical capacity after the 10th cycle. Possible explanations are discussed.

  7. Growth and Physical Structure of Amorphous Boron Carbide Deposited by Magnetron Sputtering on a Silicon Substrate with a Titanium Interlayer

    Directory of Open Access Journals (Sweden)

    Roberto Caniello

    2013-01-01

    Full Text Available Multilayer amorphous boron carbide coatings were produced by radiofrequency magnetron sputtering on silicon substrates. To improve the adhesion, titanium interlayers with different thickness were interposed between the substrate and the coating. Above three hundreds nanometer, the enhanced roughness of the titanium led to the growth of an amorphous boron carbide with a dense and continuing columnar structure, and no delamination effect was observed. Correspondingly, the adhesion of the coating became three time stronger than in the case of a bare silicon substrate. Physical structure and microstructural proprieties of the coatings were investigated by means of a scan electron microscopy, atomic force microscopy and X-ray diffraction. The adhesion of the films was measured by a scratch tester.

  8. Photostability Assessment in Amorphous-Silicon Solar Cells; Determinacion de la Fotoestabilidad en Celulas Solares de Silicio Amorfo

    Energy Technology Data Exchange (ETDEWEB)

    Gandia, J. J.; Carabe, J.; Fabero, F.; Jimenez, R.; Rivero, J. M. [Ciemat, Madrid (Spain)

    2000-07-01

    The present status of amorphous-silicon-solar-cell research and development at CIEMAT requires the possibility to characterise the devices prepared from the point of view of their stability against sunlight exposure. Therefore a set of tools providing such a capacity has been developed. Together with an introduction to photovoltaic applications of amorphous silicon and to the photodegradation problem, the present work describes the process of setting up these tools. An indoor controlled-photodegradation facility has been designed and built, and a procedure has been developed for the measurement of J-V characteristics in well established conditions. This method is suitable for a kinds of solar cells, even for those for which no model is still available. The photodegradation and characterisation of some cells has allowed to validate both the new testing facility and method. (Author) 14 refs.

  9. High-resolution secondary reconstructions with the use of flat panel CT in the clinical assessment of patients with cochlear implants.

    Science.gov (United States)

    Pearl, M S; Roy, A; Limb, C J

    2014-06-01

    Radiologic assessment of cochlear implants can be limited because of metallic streak artifacts and the high attenuation of the temporal bones. We report on 14 patients with 18 cochlear implants (17 Med-El standard 31.5-mm arrays, 1 Med-El medium 24-mm array) who underwent flat panel CT with the use of high-resolution secondary reconstruction techniques. Flat panel CT depicted the insertion site, cochlear implant course, and all 216 individual electrode contacts. The calculated mean angular insertion depth for standard arrays was 591.9° (SD = 70.9; range, 280°). High-resolution secondary reconstructions of the initial flat panel CT dataset, by use of a manually generated field of view, Hounsfield unit kernel type, and sharp image characteristics, provided high-quality images with improved spatial resolution. Flat panel CT is a promising imaging tool for the postoperative evaluation of cochlear implant placement. © 2014 by American Journal of Neuroradiology.

  10. Amorphous NEA Silicon Photocathodes - A Robust RF Gun Electron Source. Final Report

    International Nuclear Information System (INIS)

    Mulhollan, Gregory A.

    2009-01-01

    Amorphous silicon (a-Si) has been shown to have great promise as a negative electron affinity visible wavelength photocathode suitable for radio frequency (RF) gun systems. The specific operating wavelength can be shifted by growing it as a germanium alloy (a-Si(1-x)Ge(x)) rather than as pure silicon. This class of photoemitters has been shown to possess a high degree of immunity to charged particle flux. Such particle flux can be a significant problem in the operation of other photocathodes in RF gun systems. Its emission characteristics in the form of current per unit area, or current density, and emission angle, or beam spread are well matched for use in RF guns. Photocathodes made of a-Si can be fabricated on a variety of substrates including those most commonly employed in RF gun systems. Such photocathodes can be made for operation in either transmission or reflection mode. By growing them utilizing radio frequency plasma enhanced chemical vapor deposition, the unit cost is quite low, the quality is high and it is straightforward to grow custom size substrates and full or limited regions to confine the electron emission to the desired area. Quality emitters have been fabricated on tantalum, molybdenum, tungsten, titanium, copper, stainless steel, float glass, borosilicate glass and gallium arsenide. In addition to performing well in dedicated test chambers, a-Si photocathodes have been shown to function well in self-contained vacuum tubes. In this employment, they are subjected to a strenuous environment. Successful operation in this configuration provides additional confidence in their application to high energy linac photoinjectors and potentially as part of reliable, low cost photocathode driven RF gun systems that could become ready replacements for the diode and triode guns used on medical accelerators. Their applications in stand-alone vacuum tubes is just beginning to be explored.

  11. Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers

    Science.gov (United States)

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-07-09

    A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

  12. Complex nano-patterning of structural, optical, electrical and electron emission properties of amorphous silicon thin films by scanning probe

    Czech Academy of Sciences Publication Activity Database

    Fait, Jan; Čermák, Jan; Stuchlík, Jiří; Rezek, Bohuslav

    2018-01-01

    Roč. 428, Jan (2018), s. 1159-1165 ISSN 0169-4332 R&D Projects: GA ČR GA15-01809S Institutional support: RVO:68378271 Keywords : amorphous silicon * nano-templates * nanostructures * electrical conductivity * electron emission * atomic force microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.387, year: 2016

  13. Evaluation of patient exposure with Flat Panel Detector (FPD) in X-ray TV system

    International Nuclear Information System (INIS)

    Yamada, M.; Komiya, N.; Kawaguchi, A.; Suzuki, M.; Suzuki, Shoichi; Asada, Yasuki

    2008-01-01

    The use of flat-panel detector (FPD) systems in TV equipment for gastrointestinal tract examination is increasing. The use of FPD systems is believed to reduce the exposure dose. When our institution changed its TV equipment from an image intensifier (GE; MS90Tj) system to an FPD (Shimadzu; SONIALVISION safire DAR-3500) system, we measured the doses produced and carried out a comparative examination of the extent to which exposure could be reduced. Two TV systems were used. We used an analyzer to measure output waveform, tube voltage, and half-value layer (HVL), and an ionization chamber dosimeter to carry out dose-in-air measurements. Body thickness, number of image acquisitions, and fluoroscopy time are required for the calculation of entrance skin dose (ESD). We therefore measured body thicknesses in 1000 upper gastrointestinal tract (UGI) and barium enemas and obtained average body thicknesses for males and females by age group. Values used for number of image acquisitions and fluoroscopy times were the averages in our institution over a two-year period. When an I.I. system was used, the average ESD during UGI examination were 126.8 mGy fluoroscopy dose and 11.62 mGy imaging dose, for an average total dose of 138.42 mGy per examination. ESD during barium enema averaged 201.73 mGy fluoroscopy dose and 45.2 mGy imaging dose, for an average total dose of 246.92 mGy per examination. When an FPD system was used, the average ESD during UGI examination were 58.71 mGy fluoroscopy dose and 5.72 mGy imaging dose, for an average total dose of 64.43 mGy per examination. ESD during barium enema averaged 112.21 mGy fluoroscopy dose and 24.55 mGy imaging dose, for an average total dose of 136.76 mGy per examination. The use of an FPD system reduced both fluoroscopy dose and imaging dose by 50%. The number of TV systems equipped with FPD in Japan has increased from around 1300 in 2006 to around 1700 in 2007. The use of FPD systems can be expected to increase in future. This

  14. Measurement of joint kinematics using a conventional clinical single-perspective flat-panel radiography system

    International Nuclear Information System (INIS)

    Seslija, Petar; Teeter, Matthew G.; Yuan Xunhua; Naudie, Douglas D. R.; Bourne, Robert B.; MacDonald, Steven J.; Peters, Terry M.; Holdsworth, David W.

    2012-01-01

    Purpose: The ability to accurately measure joint kinematics is an important tool in studying both normal joint function and pathologies associated with injury and disease. The purpose of this study is to evaluate the efficacy, accuracy, precision, and clinical safety of measuring 3D joint motion using a conventional flat-panel radiography system prior to its application in an in vivo study. Methods: An automated, image-based tracking algorithm was implemented to measure the three-dimensional pose of a sparse object from a two-dimensional radiographic projection. The algorithm was tested to determine its efficiency and failure rate, defined as the number of image frames where automated tracking failed, or required user intervention. The accuracy and precision of measuring three-dimensional motion were assessed using a robotic controlled, tibiofemoral knee phantom programmed to mimic a subject with a total knee replacement performing a stair ascent activity. Accuracy was assessed by comparing the measurements of the single-plane radiographic tracking technique to those of an optical tracking system, and quantified by the measurement discrepancy between the two systems using the Bland–Altman technique. Precision was assessed through a series of repeated measurements of the tibiofemoral kinematics, and was quantified using the across-trial deviations of the repeated kinematic measurements. The safety of the imaging procedure was assessed by measuring the effective dose of ionizing radiation associated with the x-ray exposures, and analyzing its relative risk to a human subject. Results: The automated tracking algorithm displayed a failure rate of 2% and achieved an average computational throughput of 8 image frames/s. Mean differences between the radiographic and optical measurements for translations and rotations were less than 0.08 mm and 0.07° in-plane, and 0.24 mm and 0.6° out-of-plane. The repeatability of kinematics measurements performed using the

  15. Optimization of a flat-panel based real time dual-energy system for cardiac imaging

    International Nuclear Information System (INIS)

    Ducote, Justin L.; Xu Tong; Molloi, Sabee

    2006-01-01

    A simulation study was conducted to evaluate the effects of high-energy beam filtration, dual-gain operation and noise reduction on dual-energy images using a digital flat-panel detector. High-energy beam filtration increases image contrast through greater beam separation and tends to reduce total radiation exposure and dose per image pair. It is also possible to reduce dual-energy image noise by acquiring low and high-energy images at two different detector gains. In addition, dual-energy noise reduction algorithms can further reduce image noise. The cumulative effect of these techniques applied in series was investigated in this study. The contrast from a small thickness of calcium was simulated over a step phantom of tissue equivalent material with a CsI phosphor as the image detector. The dual-energy contrast-to-noise ratio was calculated using values of energy absorption and energy variance. A figure-of-merit (FOM) was calculated from dual-energy contrast-to-noise ratio (CNR) and patient effective dose estimated from values of entrance exposure. Filter atomic numbers in the range of 1-100 were considered with thicknesses ranging from 0-2500 mg/cm 2 . The simulation examined combinations of the above techniques which maximized the FOM. The application of a filter increased image contrast by as much as 45%. Near maximal increases were seen for filter atomic numbers in the range of 40-60 and 85-100 with masses above 750 mg/cm 2 . Increasing filter thickness beyond 1000 mg/cm 2 increased tube loading without further significant contrast enhancement. No additional FOM improvements were seen with dual gain before or after the application of any noise reduction algorithm. Narrow beam experiments were carried out to verify predictions. The measured FOM increased by more than a factor of 3.5 for a silver filter thickness of 800 μm, equal energy weighting and application of a noise clipping algorithm. The main limitation of dynamic high-energy filtration is increased

  16. Impact and Penetration of Thin Aluminum 2024 Flat Panels at Oblique Angles of Incidence

    Science.gov (United States)

    Ruggeri, Charles R.; Revilock, Duane M.; Pereira, J. Michael; Emmerling, William; Queitzsch, Gilbert K., Jr.

    2015-01-01

    under more extreme conditions, using a projectile with a more complex shape and sharp contacts, impacting flat panels at oblique angles of incidence.

  17. Structural characterization of the interface structure of amorphous silicon thin films after post-deposition argon or hydrogen plasma treatment

    Science.gov (United States)

    Neumüller, Alex; Sergeev, Oleg; Vehse, Martin; Agert, Carsten

    2017-05-01

    The interfaces in silicon thin film solar cells and silicon heterojunction solar cells are considered to be very important for the solar cell conversion efficiency. This work studies the interface properties of hydrogenated amorphous silicon thin films deposited on crystalline silicon wafers after post-deposition hydrogen plasma treatment (HPT) or argon plasma treatment (APT). The investigation extends our previous study by examining the structural changes resulting from the post-deposition plasma treatment on silicon thin film solar cells. We analyzed the ellipsometry and infrared spectra of our samples to gain a deeper understanding of the fundamental plasma treatment effects. By using post-deposition APT and HPT, we were able to reduce the material stress and improve the structure of these layers. Our results show that APT yields a more compact material with fewer voids and less distinct localized tail states. We discuss the effect of APT and HPT on the most crucial interface in silicon heterojunction solar cells, the i-a-Si:H/c-Si interface. We propose to introduce APT as a post-deposition process step in the fabrication of silicon heterojunction solar cells.

  18. Memory effect in MOS structures containing amorphous or crystalline silicon nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Meier, Sebastian; Brueggemann, Rudolf; Bauer, Gottfried Heinrich [Institute of Physics, Carl von Ossietzky University Oldenburg, D-26111 Oldenburg (Germany); Nedev, Nicola [Istituto de Ingenieria, Universidad Autonoma de Baja California, Benito Juarez Blvd., s/n, C.P. 21280, Mexicali, Baja California (Mexico); Manolov, Emmo; Nesheva, Diana; Levi, Zelma [Insitute of Solid State Physics, Bulgarian Academy of Science, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria)

    2008-07-01

    Amorphous and crystalline silicon nanoparticles (Si-NPs) embedded in a SiO{sub 2} matrix are fabricated by thermal annealing of Metal/SiO{sub 2}/SiO{sub x}/c-Si structures (x=1.15) at 700 C or 1000 C in N{sub 2} atmosphere for 30 or 60 minutes. High frequency C-V measurements show that the samples can be charged negatively or positively by applying a positive or negative bias voltage to the gate. A memory effect, due to the Si-NPs in the SiO{sub 2} matrix, is observed. The method of measurement with open circuit between two measurements leads to the retention characteristic where the structures retain about 50% of negative charge trapped in Si-NPs for 24 hours. A second method, where the flat-band voltage is applied as bias voltage, shows shorter retention characteristics. There the Si-NPs retain 50% of their charge after 10 hours.

  19. 25th Anniversary Article: Organic Field-Effect Transistors: The Path Beyond Amorphous Silicon

    Science.gov (United States)

    Sirringhaus, Henning

    2014-01-01

    Over the past 25 years, organic field-effect transistors (OFETs) have witnessed impressive improvements in materials performance by 3–4 orders of magnitude, and many of the key materials discoveries have been published in Advanced Materials. This includes some of the most recent demonstrations of organic field-effect transistors with performance that clearly exceeds that of benchmark amorphous silicon-based devices. In this article, state-of-the-art in OFETs are reviewed in light of requirements for demanding future applications, in particular active-matrix addressing for flexible organic light-emitting diode (OLED) displays. An overview is provided over both small molecule and conjugated polymer materials for which field-effect mobilities exceeding > 1 cm2 V–1 s–1 have been reported. Current understanding is also reviewed of their charge transport physics that allows reaching such unexpectedly high mobilities in these weakly van der Waals bonded and structurally comparatively disordered materials with a view towards understanding the potential for further improvement in performance in the future. PMID:24443057

  20. Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films

    Science.gov (United States)

    Alcinkaya, Burak; Sel, Kivanc

    2018-01-01

    The properties of phosphorus doped hydrogenated amorphous silicon carbide (a-SiCx:H) thin films, that were deposited by plasma enhanced chemical vapor deposition technique with four different carbon contents (x), were analyzed and compared with those of the intrinsic a-SiCx:H thin films. The carbon contents of the films were determined by X-ray photoelectron spectroscopy. The thickness and optical energies, such as Tauc, E04 and Urbach energies, of the thin films were determined by UV-Visible transmittance spectroscopy. The electrical properties of the films, such as conductivities and activation energies were analyzed by temperature dependent current-voltage measurements. Finally, the conduction mechanisms of the films were investigated by numerical analysis, in which the standard transport mechanism in the extended states and the nearest neighbor hopping mechanism in the band tail states were taken into consideration. It was determined that, by the effect of phosphorus doping the dominant conduction mechanism was the standard transport mechanism for all carbon contents.

  1. Dose patient verification during treatment using an amorphous silicon electronic portal imaging device in radiotherapy

    International Nuclear Information System (INIS)

    Berger, Lucie

    2006-01-01

    Today, amorphous silicon electronic portal imaging devices (aSi EPID) are currently used to check the accuracy of patient positioning. However, they are not use for dose reconstruction yet and more investigations are required to allow the use of an aSi EPID for routine dosimetric verification. The aim of this work is first to study the dosimetric characteristics of the EPID available at the Institut Curie and then, to check patient dose during treatment using these EPID. First, performance optimization of the Varian aS500 EPID system is studied. Then, a quality assurance system is set up in order to certify the image quality on a daily basis. An additional study on the dosimetric performance of the aS500 EPID is monitored to assess operational stability for dosimetry applications. Electronic portal imaging device is also a useful tool to improve IMRT quality control. The validation and the quality assurance of a portal dose image prediction system for IMRT pre-treatment quality control are performed. All dynamic IMRT fields are verified in clinical routine with the new method based on portal dosimetry. Finally, a new formalism for in vivo dosimetry using transit dose measured with EPID is developed and validated. The absolute dose measurement issue using aSi EPID is described and the midplane dose determination using in vivo dose measurements in combination with portal imaging is used with 3D-conformal-radiation therapy. (author) [fr

  2. Adjustable optical response of amorphous silicon nanowires integrated with thin films.

    Science.gov (United States)

    Dhindsa, Navneet; Walia, Jaspreet; Pathirane, Minoli; Khodadad, Iman; Wong, William S; Saini, Simarjeet Singh

    2016-04-08

    We experimentally demonstrate a new optical platform by integrating hydrogenated amorphous silicon nanowire arrays with thin films deposited on transparent substrates like glass. A 535 nm thick thin film is anisotropically etched to fabricate vertical nanowire arrays of 100 nm diameter arranged in a square lattice. Adjusting the nanowire length, and consequently the thin film thickness permits the optical properties of this configuration to be tuned for either transmission filter response or enhanced broadband absorption. Vivid structural colors are also achieved in reflection and transmission. The optical properties of the platform are investigated for three different etch depths. Transmission filter response is achieved for a configuration with nanowires on glass without any thin film. Alternatively, integrating thin film with nanowires increases the absorption efficiency by ∼97% compared to the thin film starting layer and by ∼78% over nanowires on glass. The ability to tune the optical response of this material in this fashion makes it a promising platform for high performance photovoltaics, photodetectors and sensors.

  3. Nano-fabrication of depth-varying amorphous silicon crescent shell array for light trapping

    Science.gov (United States)

    Yang, Huan; Li, Ben Q.; Jiang, Xinbing; Yu, Wei; Liu, Hongzhong

    2017-12-01

    We report a new structure of depth controllable amorphous silicon (a-Si) crescent shells array, fabricated by the SiO2 monolayer array assisted deposition of a-Si by plasma enhanced chemical vapor deposition and nanosphere lithography, for high-efficiency light trapping applications. The depth of the crescent shell cavity was tailored by selective etching of a-Si layer of the SiO2/a-Si core/shell nanoparticle array with a varied etching time. The morphological changes of the crescent shells were examined by scanning electron microscopy and atomic force microscopy. A simple model is developed to describe the geometrical evolution of the a-Si crescent shells. Spectroscopic measurements and finite difference time domain simulations were conducted to examine the optical performance of the crescent shells. Results show that these nanostructures all have a broadband high efficiency absorption and that the light trapping capability of these crescent shell structures depends on the excitation of depths-regulated optical resonance modes. With an appropriate selection of process parameters, the structure of crescent a-Si shells may be fine-tuned to achieve an optimal light trapping capacity.

  4. On the structural and optical properties of sputtered hydrogenated amorphous silicon thin films

    International Nuclear Information System (INIS)

    Barhdadi, A.; Chafik El ldrissi, M.

    2002-08-01

    The present work is essentially focused on the study of optical and structural properties of hydrogenated amorphous silicon thin films (a-Si:H) prepared by radio-frequency cathodic sputtering. We examine separately the influence of hydrogen partial pressure during film deposition, and the effect of post-deposition thermal annealings on the main optical characteristics of the layers such as refraction index, optical gap and Urbach energy. Using the grazing X-rays reflectometry technique, thin film structural properties are examined immediately after films deposition as well as after surface oxidation or annealing. We show that low hydrogen pressures allow a saturation of dangling bonds in the layers, while high doses lead to the creation of new defects. We show also that thermal annealing under moderate temperatures improves the structural quality of the deposited layers. For the films examined just after deposition, the role of hydrogen appears in the increase of their density. For those analysed after a short stay in the ambient, hydrogen plays a protective role against the oxidation of their surfaces. This role disappears for a long time stay in the ambient. (author)

  5. Biocompatibility of Hydrogen-Diluted Amorphous Silicon Carbide Thin Films for Artificial Heart Valve Coating

    Science.gov (United States)

    Rizal, Umesh; Swain, Bhabani S.; Rameshbabu, N.; Swain, Bibhu P.

    2018-01-01

    Amorphous silicon carbide (a-SiC:H) thin films were synthesized using trichloromethylsilane by a hot wire chemical vapor deposition process. The deposited films were characterized by Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, x-ray diffraction and x-ray photoelectron spectroscopy to confirm its chemical bonding, structural network and composition of the a-SiC:H films. The optical microscopy images reveal that hydrogen dilution increased the surface roughness and pore density of a-SiC:H thin film. The Raman spectroscopy and FTIR spectra reveal chemical network consisting of Si-Si, C-C and Si-C bonds, respectively. The XRD spectroscopy and Raman spectroscopy indicate a-SiC:H still has short-range order. In addition, in vitro cytotoxicity test ensures the behavior of cell-semiconductor hybrid to monitor the proper coordination. The live-dead assays and MTT assay reveal an increase in green nucleus cell, and cell viability is greater than 88%, respectively, showing non-toxic nature of prepared a-SiC:H film. Moreover, the result indicated by direct contact assay, and cell prefers to adhere and proliferate on a-SiC:H thin films having a positive effect as artificial heart valve coating material.

  6. Thermal grafting of fluorinated molecular monolayers on doped amorphous silicon surfaces

    International Nuclear Information System (INIS)

    Sabbah, H.; Zebda, A.; Ababou-Girard, S.; Solal, F.; Godet, C.; Conde, J. P.; Chu, V.

    2009-01-01

    Thermally induced (160-300 deg. C) gas phase grafting of linear alkene molecules (perfluorodecene) was performed on hydrogenated amorphous silicon (a-Si:H) films, either nominally undoped or doped with different boron and phosphorus concentrations. Dense and smooth a-Si:H films were grown using plasma decomposition of silane. Quantitative analysis of in situ x-ray photoelectron spectroscopy indicates the grafting of a single layer of organic molecules. The hydrophobic properties of perfluorodecene-modified surfaces were studied as a function of surface coverage. Annealing experiments in ultrahigh vacuum show the covalent binding and the thermal stability of these immobilized layers up to 370 deg. C; this temperature corresponds to the Si-C bond cleavage temperature. In contrast with hydrogenated crystalline Si(111):H, no heavy wet chemistry surface preparation is required for thermal grafting of alkene molecules on a-Si:H films. A threshold grafting temperature is observed, with a strong dependence on the doping level which produces a large contrast in the molecular coverage for grafting performed at 230 deg. C

  7. Physical criteria for the interface passivation layer in hydrogenated amorphous/crystalline silicon heterojunction solar cell

    Science.gov (United States)

    Zhao, Lei; Wang, Guanghong; Diao, Hongwei; Wang, Wenjing

    2018-01-01

    AFORS-HET (automat for simulation of heterostructures) simulation was utilized to explore the physical criteria for the passivation layer in hydrogenated amorphous/crystalline silicon heterojunction (SHJ) solar cells, by systematically investigating the solar cell current density-voltage (J-V) performance as a function of the interface defect density (D it) at the passivation layer/c-Si hetero-interface, the thickness (t) of the passivation layer, the bandgap (E g) of the passivation layer, and the density of dangling bond states (D db)/band tail states (D bt) in the band gap of the passivation layer. The corresponding impact regulations were presented clearly. Except for D it, the impacts of D db, D bt and E g are strongly dependent on the passivation layer thickness t. While t is smaller than 4-5 nm, the solar cell performance is less sensitive to the variation of D db, D bt and E g. Low D it at the a-Si:H/c-Si interface and small thickness t are the critical criteria for the passivation layer in such a case. However, if t has to be relatively larger, the microstructure, i.e. the material quality, including D db, D bt and E g, of the passivation layer should be controlled carefully. The mechanisms involved were analyzed and some applicable methods to prepare the passivation layer were proposed.

  8. Human periosteum cell osteogenic differentiation enhanced by ionic silicon release from porous amorphous silica fibrous scaffolds.

    Science.gov (United States)

    Odatsu, Tetsurou; Azimaie, Taha; Velten, Megan F; Vu, Michael; Lyles, Mark B; Kim, Harry K; Aswath, Pranesh B; Varanasi, Venu G

    2015-08-01

    Current synthetic grafts for bone defect filling in the sinus can support new bone formation but lack the ability to stimulate or enhance osteogenic healing. To promote such healing, osteoblast progenitors such as human periosteum cells must undergo osteogenic differentiation. In this study, we tested the hypothesis that degradation of porous amorphous silica fibrous (PASF) scaffolds can enhance human periosteum cell osteogenic differentiation. Two types of PASF were prepared and evaluated according to their densities (PASF99, PASF98) with 99 and 98% porosity, respectively. Silicon (Si) ions were observed to rapidly release from both scaffolds within 24 h in vitro. PASF99 Si ion release rate was estimated to be nearly double that of PASF98 scaffolds. Mechanical tests revealed a lower compressive strength in PASF99 as compared with PASF98. Osteogenic expression analysis showed that PASF99 scaffolds enhanced the expression of activating transcription factor 4, alkaline phosphatase, and collagen (Col(I)α1, Col(I)α2). Scanning electron microscopy showed cellular and extracellular matrix (ECM) ingress into both scaffolds within 16 days and the formation of Ca-P precipitates within 85 days. In conclusion, this study demonstrated that PASF scaffolds enhance human periosteum cell osteogenic differentiation by releasing ionic Si, and structurally supporting cellular and ECM ingress. © 2015 Wiley Periodicals, Inc.

  9. Laser Direct Patterning of Organic Dielectric Passivation Layer for Fabricating Amorphous Silicon Thin-Film Transistors

    Science.gov (United States)

    Chen, Chao-Nan; Su, Kuo-Hui; Chen, Yeong-Chin

    2011-06-01

    In this study, a laser direct patterning process application in benzocyclobutene (BCB) organic dielectric passivation-based amorphous silicon (a-Si) thin film transistor (TFT) device fabrication has been carried out using a KrF excimer laser. A BCB organic photoresist material of 2000 nm with a dielectric constant = 2.7 served as the dielectric passivation layer in our device. Compared with conventional processes, laser direct patterning combining BCB organic photoresist dielectric passivation could eliminate at least four process steps. The etching depth of the BCB organic material passivation layer depends on the laser energy density and number of irradiation shots. The hydrogenated a-Si TFT devices are fabricated by replacing the passivation layer and contact hole patterning process. The mobility and threshold voltage reached 0.16 cm2 V-1 s-1 and -3.5 V, respectively. For TFT device performance, laser direct patterning technology is a potential method of replacing photolithography technology in the application of BCB organic dielectric passivation-based TFT manufacture.

  10. Calibration model of a dual gain flat panel detector for 2D and 3D x-ray imaging

    International Nuclear Information System (INIS)

    Schmidgunst, C.; Ritter, D.; Lang, E.

    2007-01-01

    The continuing research and further development in flat panel detector technology have led to its integration into more and more medical x-ray systems for two-dimensional (2D) and three-dimensional (3D) imaging, such as fixed or mobile C arms. Besides the obvious advantages of flat panel detectors, like the slim design and the resulting optimum accessibility to the patient, their success is primarily a product of the image quality that can be achieved. The benefits in the physical and performance-related features as opposed to conventional image intensifier systems (e.g., distortion-free reproduction of imaging information or almost linear signal response over a large dynamic range) can be fully exploited, however, only if the raw detector images are correctly calibrated and postprocessed. Previous procedures for processing raw data contain idealizations that, in the real world, lead to artifacts or losses in image quality. Thus, for example, temperature dependencies or changes in beam geometry, as can occur with mobile C arm systems, have not been taken into account up to this time. Additionally, adverse characteristics such as image lag or aging effects have to be compensated to attain the best possible image quality. In this article a procedure is presented that takes into account the important dependencies of the individual pixel sensitivity of flat panel detectors used in 2D or 3D imaging and simultaneously minimizes the work required for an extensive recalibration. It is suitable for conventional detectors with only one gain mode as well as for the detectors specially developed for 3D imaging with dual gain read-out technology

  11. High Efficiency Triple-Junction Amorphous Silicon Alloy Photovoltaic Technology, Final Technical Report, 6 March 1998 - 15 October 2001

    Energy Technology Data Exchange (ETDEWEB)

    Guha, S.

    2001-11-08

    This report describes the research program intended to expand, enhance, and accelerate knowledge and capabilities for developing high-performance, two-terminal multijunction amorphous silicon (a-Si) alloy cells, and modules with low manufacturing cost and high reliability. United Solar uses a spectrum-splitting, triple-junction cell structure. The top cell uses an amorphous silicon alloy of {approx}1.8-eV bandgap to absorb blue photons. The middle cell uses an amorphous silicon germanium alloy ({approx}20% germanium) of {approx}1.6-eV bandgap to capture green photons. The bottom cell has {approx}40% germanium to reduce the bandgap to {approx}1.4-eV to capture red photons. The cells are deposited on a stainless-steel substrate with a predeposited silver/zinc oxide back reflector to facilitate light-trapping. A thin layer of antireflection coating is applied to the top of the cell to reduce reflection loss. The major research activities conducted under this program were: (1) Fundamental studies to improve our understanding of materials and devices; the work included developing and analyzing a-Si alloy and a-SiGe alloy materials prepared near the threshold of amorphous-to-microcrystalline transition and studying solar cells fabricated using these materials. (2) Deposition of small-area cells using a radio-frequency technique to obtain higher deposition rates. (3) Deposition of small-area cells using a modified very high frequency technique to obtain higher deposition rates. (4) Large-area cell research to obtain the highest module efficiency. (5) Optimization of solar cells and modules fabricated using production parameters in a large-area reactor.

  12. Moire fringe reduction by optical filters in integral three-dimensional imaging on a color flat-panel display

    Science.gov (United States)

    Okui, Makoto; Kobayashi, Masaki; Arai, Jun; Okano, Fumio

    2005-07-01

    We propose a method to reduce the color moire fringes that are attributable to the structure of a color flat-panel display in integral three-dimensional imaging. The method uses two types of optical low-pass filter, diffuser and defocus. The effectiveness of the method was confirmed in an experiment. We describe a way to design these filters with moire's residual energy and video signal energy as indices and demonstrate the validity of the model, which combines two filters to reduce moire fringes.

  13. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    Energy Technology Data Exchange (ETDEWEB)

    Jing, Tao [Univ. of California, Berkeley, CA (United States). Dept. of Engineering-Nuclear Engineering

    1995-05-01

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ~20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 {micro}s. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth.

  14. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    International Nuclear Information System (INIS)

    Jing, T.; Lawrence Berkeley Lab., CA

    1995-05-01

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ∼20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 micros. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth

  15. Hybrid electrolytes based on ionic liquids and amorphous porous silicon nanoparticles: Organization and electrochemical properties

    KAUST Repository

    Tchalala, Mohammed

    2017-05-06

    Ionic liquids (ILs) and ionic liquid-nanoparticle (IL-NP) hybrid electrolytes have garnered a lot of interest due to their unique properties that stimulate their use in various applications. Herein, we investigate the electrochemical and photo-physical properties of organic-inorganic hybrid electrolytes based on three imidazolium-based ionic liquids, i.e., 1-buthyl-3-methylimidazolium thiocyanate ([bmim] [SCN]), 1-ethyl-3-methylimidazolium tetrafluoroborate ([emim] [BF4]) and 1-buthyl-3-methylimidazolium acetate ([bmim] [Ac]) that are covalently tethered to amorphous porous silicon nanoparticles (ap-Si NPs). We found that the addition of ap-Si NPs confer to the ILs a pronounced boost in the electrocatalytic activity, and in mixtures of ap-Si NPs and [bmim] [SCN], the room-temperature current transport is enhanced by more than 5 times compared to bare [bmim] [SCN]. A detailed structural investigation by transmission electron microscope (TEM) showed that the ap-Si NPs were well dispersed, stabilized and highly aggregated in [bmim] [SCN], [emim] [BF4] and [bmim] [Ac] ILs, respectively. These observations correlate well with the enhanced current transport observed in ap-Si NPs/[bmim] [SCN] evidenced by electrochemical measurements. We interpreted these observations by the use of UV–vis absorbance, photoluminescence (PL), FTIR and solid-state NMR spectroscopy. We found that the ap-Si NPs/[bmim] [SCN] hybrid stands out due to its stability and optical transparency. This behavior is attributed to the iron(III) thiocyanate complexion as per the experimental findings. Furthermore, we found that the addition of NPs to [emim] [BF4] alters the equilibrium of the IL, which consequently improved the stability of the NPs through intermolecular interactions with the two ionic layers (anionic and cationic layers) of the IL. While in the case of [bmim] [Ac], the dispersion of ap-Si NPs was restrained because of the high viscosity of this IL.

  16. Continuous roll-to-roll amorphous-silicon photovoltaic manufacturing technology

    Science.gov (United States)

    Izu, M.

    1994-11-01

    This report describes work done in Phase 2 of a 3-year project to advance Energy Conversion Devices, Inc. (ECD), roll-to-roll, triple-junction photovoltaic manufacturing technologies, to reduce the module production costs, to increase the stabilized module performance, and to expand the commercial capacity utilizing ECD technology. Major accomplishments in Phase 2 include: (1) designing, constructing and completing the initial optimization of a 200-kW multi-purpose continuous roll-to-roll amorphous silicon (a-Si) alloy solar cell deposition machine; (2) designing and constructing a serpentine deposition chamber that will be used to demonstrate a compact, low-cost deposition machine design with improved throughput and gas utilization factor; (3) demonstrating greater than or equal to 8.3% initial small-area efficiency a-Si-alloy devices with an intrinsic a-Si layer deposited using serpentine technology in the initial start-up experiment; (4) developing a new back-reflector evaluation technique using Photothermal Defection Spectroscopy (PDS) to analyze the optical losses of textured back-reflector; (5) developing an improved textured Ag/ZnO back-reflector system demonstrating a 26% gain in short-circuit current density over the previous textured Al back-reflector system; (6) demonstrating the long-term stability of ECD's 0.3 m x 1.2 m (1 ft x 4 ft) production module; (7) developing a new grid/bus-bar design utilizing thin wire grids to improve the efficiency by approximately 3% to 4% and reduce the grid/bus-bar cost by about 50%; and (8) achieving accumulative material cost reduction of 56%.

  17. Accelerated kinetics of amorphous silicon using an on-the-fly off-lattice kinetic Monte-Carlo method

    Science.gov (United States)

    Joly, Jean-Francois; El-Mellouhi, Fedwa; Beland, Laurent Karim; Mousseau, Normand

    2011-03-01

    The time evolution of a series of well relaxed amorphous silicon models was simulated using the kinetic Activation-RelaxationTechnique (kART), an on-the-fly off-lattice kinetic Monte Carlo method. This novel algorithm uses the ART nouveau algorithm to generate activated events and links them with local topologies. It was shown to work well for crystals with few defects but this is the first time it is used to study an amorphous material. A parallel implementation allows us to increase the speed of the event generation phase. After each KMC step, new searches are initiated for each new topology encountered. Well relaxed amorphous silicon models of 1000 atoms described by a modified version of the empirical Stillinger-Weber potential were used as a starting point for the simulations. Initial results show that the method is faster by orders of magnitude compared to conventional MD simulations up to temperatures of 500 K. Vacancy-type defects were also introduced in this system and their stability and lifetimes are calculated.

  18. Roof-integrated amorphous silicon photovoltaic installation at the Institute for Micro-Technology; Installation photovoltaique IMT Neuchatel silicium amorphe integre dans toiture

    Energy Technology Data Exchange (ETDEWEB)

    Tscharner, R.; Shah, A.V.

    2003-07-01

    This final report for the Swiss Federal Office of Energy (SFOE) describes the 6.44 kW grid-connected photovoltaic (PV) power plant that has been in operation since 1996 at the Institute for Micro-Technology in Neuchatel, Switzerland. The PV plant, which features large-area, fully integrated modules using amorphous silicon cells was the first of its kind in Switzerland. Experience gained with the installation, which has been fully operational since its construction, as well as the power produced and efficiencies measured are presented and commented. The role of the installation as the forerunner of new, so-called 'micro-morph' thin-film solar cell technology developed at the institute is stressed. Technical details of the plant and its performance are given.

  19. Performance of mobile digital X-ray fluoroscopy using a novel flat panel detector for intraoperative use.

    Science.gov (United States)

    Jeong, Chang-Won; Ryu, Jong-Hyun; Joo, Su-Chong; Jun, Hong-Young; Heo, Dong-Woon; Lee, Jinseok; Kim, Kyong-Woo; Yoon, Kwon-Ha

    2015-01-01

    Technologies employing digital X-ray devices are developed for mobile settings. To develop a mobile digital X-ray fluoroscopy (MDF) for intraoperative guidance, using a novel flat panel detector to focus on diagnostics in outpatient clinics, operating and emergency rooms. An MDF for small-scale field diagnostics was configured using an X-ray source and a novel flat panel detector. The imager enabled frame rates reaching 30 fps in full resolution fluoroscopy with maximal running time of 5 minutes. Signal-to-noise (SNR), contrast-to-noise (CNR), and spatial resolution were analyzed. Stray radiation, exposure radiation dose, and effective absorption dose were measured for patients. The system was suitable for small-scale field diagnostics. SNR and CNR were 62.4 and 72.0. Performance at 10% of MTF was 9.6 lp/mm (53 μ m) in the no binned mode. Stray radiation at 100 cm and 150 cm from the source was below 0.2 μ Gy and 0.1 μ Gy. Exposure radiation in radiography and fluoroscopy (5 min) was 10.2 μ Gy and 82.6 mGy. The effective doses during 5-min-long fluoroscopy were 0.26 mSv (wrist), 0.28 mSv (elbow), 0.29 mSv (ankle), and 0.31 mSv (knee). The proposed MDF is suitable for imaging in operating rooms.

  20. Dynamic modeling of the microalgae cultivation phase for energy production in open raceway ponds and flat panel photobioreactors

    Directory of Open Access Journals (Sweden)

    Matteo eMarsullo

    2015-09-01

    Full Text Available A dynamic model of microalgae cultivation phase is presented in this work. Two cultivation technologies are taken into account: the open raceway pond and the flat panel photobioreactor. For each technology, the model is able to evaluate the microalgae areal and volumetric productivity and the energy production and consumption. Differently from the most common existing models in literature, which deal with a specific part of the overall cultivation process, the model presented here includes all physical and chemical quantities that mostly affect microalgae growth: the equation of the specific growth rate for the microalgae is influenced by CO2 and nutrients concentration in the water, light intensity, temperature of the water in the reactor and by the microalgae species being considered. All these input parameters can be tuned to obtain reliable predictions. A comparison with experimental data taken from the literature shows that the predictions are consistent, slightly overestimating the productivity in case of closed photobioreactor. The results obtained by the simulation runs are consistent with those found in literature, being the areal productivity for the open raceway pond between 50 and 70 t/(ha*year in Southern Spain (Sevilla and Brazil (Petrolina and between 250 and 350 t/(ha*year for the flat panel photobioreactor in the same locations.

  1. Amorphous silicon oxide layers for surface passivation and contacting of heterostructure solar cells of amorphous and crystalline silicon; Amorphe Siliziumoxidschichten zur Oberflaechenpassivierung und Kontaktierung von Heterostruktur-Solarzellen aus amorphen und kristallinem Silizium

    Energy Technology Data Exchange (ETDEWEB)

    Einsele, Florian

    2010-02-05

    Atomic hydrogen plays a dominant role in the passivation of crystalline silicon surfaces by layers of amorphous silicon. In order to research into this role, this thesis presents the method of hydrogen effusion from thin amorphous films of silicon (a-Si:H) and silicon oxide (a-SiO{sub x}:H). The oxygen concentration of the sub-stoichiometric a-SiO{sub x}:H films ranges up to 10 at.-%. The effusion experiment yields information about the content and thermal stability of hydrogen and about the microstructure of the films. A mathematical description of the diffusion process of atomic hydrogen yields an analytical expression of the effusion rate R{sub E} depending on the linearly increasing temperature in the experiment. Fitting of the calculated effusion rates R{sub E} to measured effusion spectra yields the diffusion coefficient of atomic hydrogen in a-SiO{sub x}:H. With increasing oxygen concentration, the diffusion coefficient of hydrogen in the a-SiO{sub x}:H films decreases. This is attributed to an increasing Si-H bond energy due to back bonded oxygen, resulting in a higher stability of hydrogen in the films. This result is confirmed by an increasing thermal stability of the p-type c-Si passivation with a-SiO{sub x}:H of increasing oxygen concentrations up to 5 at.-%. The passivation reaches very low recombination velocities of S < 10 cm/s at the interface. However, for higher oxygen concentrations up to 10 at.-%, the passivation quality decreases significantly. Here, infrared spectroscopy of Si-H vibrational modes and hydrogen effusion show an increase of hydrogen-rich interconnected voids in the films. This microstructure results in a high amount of molecular hydrogen (H{sub 2}) in the layers, which is not suitable for the saturation of c-Si interface defects. Annealing of the films at temperatures around 400 C leads to a release of H{sub 2} from the voids, as a result of which Si-Si bonds in the material reconstruct. Subsequently, hydrogen migration in the

  2. Piezoresistive pressure sensor using low-temperature aluminium induced crystallization of sputter-deposited amorphous silicon film

    Science.gov (United States)

    Tiwari, Ruchi; Chandra, Sudhir

    2013-09-01

    In the present work, we have investigated the piezoresistive properties of silicon films prepared by the radio frequency magnetron sputtering technique, followed by the aluminium induced crystallization (AIC) process. Orientation and grain size of the polysilicon films were studied by x-ray diffraction analysis and found to be in the range 30-50 nm. Annealing of the Al-Si stack on an oxidized silicon substrate was performed in air ambient at 300-550 °C, resulting in layer exchange and transformation from amorphous to polysilicon phase. Van der Pauw and Hall measurement techniques were used to investigate the sheet resistance and carrier mobility of the resulting polycrystalline silicon film. The effect of Al thickness on the sheet resistance and mobility was also studied in the present work. A piezoresistive pressure sensor was fabricated on an oxidized silicon substrate in a Wheatstone bridge configuration, comprising of four piezoresistors made of polysilicon film obtained by the AIC process. The diaphragm was formed by the bulk-micromachining of silicon substrate. The response of the pressure sensor with applied negative pressure in 10-95 kPa range was studied. The gauge factor was estimated to be 5 and 18 for differently located piezoresistors on the diaphragm. The sensitivity of the pressure sensor was measured to be ˜ 30 mV MPa-1, when the Wheatstone bridge was biased at 1 V input voltage.

  3. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wight, Daniel Nilsen

    2008-07-01

    Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation

  4. Effect of silicon and oxygen dopants on the stability of hydrogenated amorphous carbon under harsh environmental conditions

    Energy Technology Data Exchange (ETDEWEB)

    Mangolini, Filippo [Univ. of Texas, Austin, TX (United States); Krick, Brandon A. [Lehigh Univ., Bethlehem, PA (United States); Jacobs, Tevis D. B. [Univ. of Pittsburgh, PA (United States); Khanal, Subarna R. [Univ. of Pittsburgh, PA (United States); Streller, Frank [Univ. of Pennsylvania, Philadelphia, PA (United States); McClimon, J. Brandon [Univ. of Pennsylvania, Philadelphia, PA (United States); Hilbert, James [Univ. of Pennsylvania, Philadelphia, PA (United States); Prasad, Somuri V. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Scharf, Thomas W. [Univ. of North Texas, Denton, TX (United States); Ohlhausen, James A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Lukes, Jennifer R. [Univ. of Pennsylvania, Philadelphia, PA (United States); Sawyer, W. Gregory [Univ. of Florida, Gainesville, FL (United States); Carpick, Robert W. [Univ. of Pennsylvania, Philadelphia, PA (United States)

    2018-04-01

    Harsh environments pose materials durability challenges across the automotive, aerospace, and manufacturing sectors, and beyond. While amorphous carbon materials have been used as coatings in many environmentally-demanding applications owing to their unique mechanical, electrical, and optical properties, their limited thermal stability and high reactivity in oxidizing environments have impeded their use in many technologies. Silicon- and oxygen-containing hydrogenated amorphous carbon (a-C:H:Si:O) films are promising for several applications because of their higher thermal stability and lower residual stress compared to hydrogenated amorphous carbon (a-C:H). However, an understanding of their superior thermo-oxidative stability compared to a-C:H is lacking, as it has been inhibited by the intrinsic challenge of characterizing an amorphous, multi-component material. Here, we show that introducing silicon and oxygen in a-C:H slightly enhances the thermal stability in vacuum, but tremendously increases the thermo-oxidative stability and the resistance to degradation upon exposure to the harsh conditions of low Earth orbit (LEO). The latter is demonstrated by having mounted samples of a-C:H:Si:O on the exterior of the International Space Station via the Materials International Space Station (MISSE) mission 7b. Exposing lightly-doped a-C:H:Si:O to elevated temperatures under aerobic conditions or to LEO causes carbon volatilization in the near-surface region, producing a silica surface layer that protects the underlying carbon from further removal. In conclusion, these findings provide a novel physically-based understanding of the superior stability of a-C:H:Si:O in harsh environments compared to a-C:H.

  5. Photoelectron yield spectroscopy and inverse photoemission spectroscopy evaluations of p-type amorphous silicon carbide films prepared using liquid materials

    Energy Technology Data Exchange (ETDEWEB)

    Murakami, Tatsuya, E-mail: mtatsuya@jaist.ac.jp, E-mail: mtakashi@jaist.ac.jp [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Masuda, Takashi, E-mail: mtatsuya@jaist.ac.jp, E-mail: mtakashi@jaist.ac.jp; Inoue, Satoshi; Shimoda, Tatsuya [Green Device Research Center, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1211 (Japan); Yano, Hiroshi; Iwamuro, Noriyuki [Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennoudai, Tsukuba, Ibaraki 305-8573 (Japan)

    2016-05-15

    Phosphorus-doped amorphous silicon carbide films were prepared using a polymeric precursor solution. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross-linkage, providing semiconducting properties in the films. The valence and conduction states of resultant films were determined directly through the combination of inverse photoemission spectroscopy and photoelectron yield spectroscopy. The incorporated carbon widened energy gap and optical gap comparably in the films with lower carbon concentrations. In contrast, a large deviation between the energy gap and the optical gap was observed at higher carbon contents because of exponential widening of the band tail.

  6. Study and characterization of an integrated circuit-deposited hydrogenated amorphous silicon sensor for the detection of particles and radiations

    International Nuclear Information System (INIS)

    Despeisse, M.

    2006-03-01

    Next generation experiments at the European laboratory of particle physics (CERN) require particle detector alternatives to actual silicon detectors. This thesis presents a novel detector technology, which is based on the deposition of a hydrogenated amorphous silicon sensor on top of an integrated circuit. Performance and limitations of this technology have been assessed for the first time in this thesis in the context of particle detectors. Specific integrated circuits have been designed and the detector segmentation, the interface sensor-chip and the sensor leakage current have been studied in details. The signal induced by the track of an ionizing particle in the sensor has been characterized and results on the signal speed, amplitude and on the sensor resistance to radiation are presented. The results are promising regarding the use of this novel technology for radiation detection, though limitations have been shown for particle physics application. (author)

  7. Study of hydrogenated amorphous silicon devices under intense electric field: application to nuclear detection

    International Nuclear Information System (INIS)

    Ilie, A.

    1996-01-01

    The goal of this work was the study, development and optimization of hydrogenated amorphous silicon (a-Si:H) devices for use in detection of ionizing radiation in applications connected to the nuclear industry. Thick p-i-n devices, capable of withstanding large electric fields (up to 10 6 V/cm) with small currents (nA/cm 2 ), were proposed and developed. In order to decrease fabrication time, films were made using the 'He diluted' PECVD process and compared to standard a-Si:H films. Aspects connected to specific detector applications as well as to the fundamental physics of a-Si:H were considered: the internal electric field technique, in which the depletion charge was measured as a function of the applied bias voltage; study of the leakage current of p-i-n devices permitted us to demonstrate different regimes: depletion, field-enhanced thermal generation and electronic injection across the p layer. The effect of the electric field on the thermal generation of the carriers was studied considering the Poole-Frenkel and tunneling mechanisms. A model was developed taking under consideration the statistics of the correlated states and electron-phonon coupling. The results suggest that mechanisms not included in the 'standard model' of a Si:h need to be considered, such as defect relaxation, a filed-dependent mobility edge etc...; a new metastable phenomenon, called 'forming', induced by prolonged exposure to a strong electric field, was observed and studied. It is characterized by marked decrease of the leakage current and the detector noise, and increase in the breakdown voltage, as well as an improvement of carrier collection efficiency. This forming process appears to be principally due to an activation of the dopants in the p layer; finally, the capacity of thick p-i-n a Si:H devices to detect ionizing radiation has been evaluated. We show that it is possible, with 20-50 micron thick p-i-n devices, to detect the full spectrum of alpha and beta particles. With an

  8. Use of an amorphous silicon EPID for measuring MLC calibration at varying gantry angle

    International Nuclear Information System (INIS)

    Clarke, M F; Budgell, G J

    2008-01-01

    Amorphous silicon electronic portal imaging devices (EPIDs) are used to perform routine quality control (QC) checks on the multileaf collimators (MLCs) at this centre. Presently, these checks are performed at gantry angle 0 0 and are considered to be valid for all other angles. Since therapeutic procedures regularly require the delivery of MLC-defined fields to the patient at a wide range of gantry angles, the accuracy of the QC checks at other gantry angles has been investigated. When the gantry is rotated to angles other than 0 0 it was found that the apparent pixel size measured using the EPID varies up to a maximum value of 0.0015 mm per pixel due to a sag in the EPID of up to 9.2 mm. A correction factor was determined using two independent methods at a range of gantry angles between 0 deg. and 360 deg. The EPID was used to measure field sizes (defined by both x-jaws and MLC) at a range of gantry angles and, after this correction had been applied, any residual gravitational sag was studied. It was found that, when fields are defined by the x-jaws and y-back-up jaws, no errors of greater than 0.5 mm were measured and that these errors were no worse when the MLC was used. It was therefore concluded that, provided the correction is applied, measurements of the field size are, in practical terms, unaffected by gantry angle. Experiments were also performed to study how the reproducibility of individual leaves is affected by gantry angle. Measurements of the relative position of each individual leaf (minor offsets) were performed at a range of gantry angles and repeated three times. The position reproducibility was defined by the RMS error in the position of each leaf and this was found to be 0.24 mm and 0.21 mm for the two leaf banks at a gantry angle of 0 0 . When measurements were performed at a range of gantry angles, these reproducibility values remained within 0.09 mm and 0.11 mm. It was therefore concluded that the calibration of the Elekta MLC is stable at

  9. Mechanisms of amorphization-induced swelling in silicon carbide: the molecular dynamics answer

    International Nuclear Information System (INIS)

    Bertolus, M.; Ribeiro, F.; Defranceschi, M.

    2007-01-01

    We present here the continuation of an investigation of the irradiation-induced swelling of SiC using classical molecular dynamics (CMD) simulations. Heavy ion irradiation has been assumed to affect the material in two successive steps (a) creation of local atomic disorder, modeled by the introduction of extended amorphous areas with various sizes and shapes in a crystalline SiC sample at constant volume (b) induced swelling, determined through relaxation using Molecular Dynamics at constant pressure. This swelling has been computed as a function of the amorphous fraction introduced. Two different definitions of the amorphous fraction were introduced to enable meaningful comparisons of our calculations with experiments and elastic modeling. One definition based on the displacements relative to the ideal lattice positions was used to compare the CMD results with data from experiments combining ion implantations and channeled Rutherford Backscattering analyses. A second definition based on atomic coordination was used to compare the CMD results to those yielded by a simplified elastic model. The results obtained are as follows. On the one hand, comparison of the swelling obtained as a function of the lattice amorphous fraction with the experimental results shows that the melting-quench amorphization simulates the best the irradiation-induced amorphization observed experimentally. This is consistent with the thermal spike phenomenon taking place during ion implantation. On the other hand, disorder analysis at the atomic scale confirms the elastic behavior of the amorphization-induced swelling, in agreement with the comparison with the results of an elastic model. First, no major structural reconstruction occurs during relaxation or annealing. Second, the systems with the most disordered and constrained amorphous area undergo the largest swelling. This means that the disorder and the constraints of the bulk amorphous area are the driving forces for the swelling

  10. Properties of Silicon Dioxide Amorphous Nanopowder Produced by Pulsed Electron Beam Evaporation

    Directory of Open Access Journals (Sweden)

    Vladislav G. Il’ves

    2015-01-01

    Full Text Available SiO2 amorphous nanopowder (NP is produced with the specific surface area of 154 m2/g by means of evaporation by a pulsed electron beam aimed at Aerosil 90 pyrogenic amorphous NP (90 m2/g as a target. SiO2 NP nanoparticles showed improved magnetic, thermal, and optical properties in comparison to Aerosil 90 NP. Possible reasons of emergence of d0 ferromagnetism at the room temperature in SiO2 amorphous NP are discussed. Photoluminescent and cathode luminescent properties of the SiO2 NP were investigated.

  11. Flat Panel Angiography in the Cross-Sectional Imaging of the Temporal Bone: Assessment of Image Quality and Radiation Dose Compared with a 64-Section Multisection CT Scanner.

    Science.gov (United States)

    Conte, G; Scola, E; Calloni, S; Brambilla, R; Campoleoni, M; Lombardi, L; Di Berardino, F; Zanetti, D; Gaini, L M; Triulzi, F; Sina, C

    2017-10-01

    Cross-sectional imaging of the temporal bone is challenging because of the complexity and small dimensions of the anatomic structures. We evaluated the role of flat panel angiography in the cross-sectional imaging of the temporal bone by comparing its image quality and radiation dose with a 64-section multisection CT scanner. We retrospectively collected 29 multisection CT and 29 flat panel angiography images of normal whole-head temporal bones. Image quality was assessed by 2 neuroradiologists, who rated the visualization of 30 anatomic structures with a 3-point ordinal scale. The radiation dose was assessed with an anthropomorphic phantom. Flat panel angiography showed better image quality than multisection CT in depicting the anterior and posterior crura of the stapes, the footplate of the stapes, the stapedius muscle, and the anterior ligament of the malleus ( P panel angiography in assessing the tympanic membrane, the bone marrow of the malleus and incus, the tendon of the tensor tympani, the interscalar septum, and the modiolus of the cochlea ( P panel angiography had a significantly higher overall image quality rating than multisection CT ( P = .035). A reduction of the effective dose of approximately 40% was demonstrated for flat panel angiography compared with multisection CT. Flat panel angiography shows strengths and weaknesses compared with multisection CT. It is more susceptible to artifacts, but due to the higher spatial resolution, it shows equal or higher image quality in assessing some bony structures of diagnostic interest. The lower radiation dose is an additional advantage of flat panel angiography. © 2017 by American Journal of Neuroradiology.

  12. Impact of contamination on hydrogenated amorphous silicon thin films and solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Woerdenweber, Jan

    2011-09-26

    This thesis deals with atmospheric contamination and cross-contamination of boron (single-chamber process) of the intrinsic absorber layer (i-layer) of p-i-n thin film solar cells based on hydrogenated amorphous silicon. The atmospheric contaminations were introduced by means of intentional leaks. Hereby, the focus is on the influence of contamination species (oxygen and nitrogen), quantity of contamination (leak flow), source of contamination (leaks at chamber wall or in the process gas pipe), and plasma power on the properties of solar cells. Thereby, the minimum requirements for the purity of vacuum and process gas as well as leak conditions of the recipient and gas pipe system have been determined. Additionally, deposition regimes were developed, where the incorporation of impurities is significantly suppressed. For standard processes critical levels of nitrogen and oxygen contamination are determined to be {proportional_to} 4 x 10{sup 18} cm{sup -3} and {proportional_to} 2 x 10{sup 19} cm{sup -3}, respectively, for a leak situated at the chamber wall. Above these concentrations the solar cell efficiency deteriorates. In literature, incorporation of oxygen and nitrogen in doping configuration is assumed to be the reason for the cell deterioration. This assumption is supported by additional material studies of contaminated absorber layers done in this work. The difference in critical concentration is due to the higher doping efficiency of nitrogen compared to that for oxygen. Nevertheless, applying an air leak the critical concentrations of O and N are reached almost simultaneously since the incorporation probability of oxygen is about one order of magnitude higher compared to that for nitrogen. Applying a leak in the process gas pipe the critical oxygen contamination level increases to {proportional_to} 2 x 10{sup 20} cm{sup -3} whereas the critical nitrogen level remains unchanged compared to a chamber wall leak. Applying a deposition regime with a very high

  13. The potential for the fabrication of wires embedded in the crystalline silicon substrate using the solid phase segregation of gold in crystallising amorphous volumes

    International Nuclear Information System (INIS)

    Liu, A.C.Y.; McCallum, J.C.

    2004-01-01

    The refinement of gold in crystallising amorphous silicon volumes was tested as a means of creating a conducting element embedded in the crystalline matrix. Amorphous silicon volumes were created by self-ion-implantation through a mask. Five hundred kiloelectronvolt Au + was then implanted into the volumes. The amorphous volumes were crystallised on a hot stage in air, and the crystallisation was characterised using cross sectional transmission electron microscopy. It was found that the amorphous silicon volumes crystallised via solid phase epitaxy at all the lateral and vertical interfaces. The interplay of the effects of the gold and also the hydrogen that infilitrated from the surface oxide resulted in a plug of amorphous material at the surface. Further annealing at this temperature demonstrated that the gold, once it had reached a certain critical concentration nucleated poly-crystalline growth instead of solid phase epitaxy. Time resolved reflectivity and Rutherford backscattering and channeling measurements were performed on large area samples that had been subject to the same implantation regime to investigate this system further. It was discovered that the crystallisation dynamics and zone refinement of the gold were complicated functions of both gold concentration and temperature. These findings do not encourage the use of this method to obtain conducting elements embedded in the crystalline silicon substrate

  14. Development of an SU-8 MEMS process with two metal electrodes using amorphous silicon as a sacrificial material

    KAUST Repository

    Ramadan, Khaled S.

    2013-02-08

    This work presents an SU-8 surface micromachining process using amorphous silicon as a sacrificial material, which also incorporates two metal layers for electrical excitation. SU-8 is a photo-patternable polymer that is used as a structural layer for MEMS and microfluidic applications due to its mechanical properties, biocompatibility and low cost. Amorphous silicon is used as a sacrificial layer in MEMS applications because it can be deposited in large thicknesses, and can be released in a dry method using XeF2, which alleviates release-based stiction problems related to MEMS applications. In this work, an SU-8 MEMS process was developed using ;-Si as a sacrificial layer. Two conductive metal electrodes were integrated in this process to allow out-of-plane electrostatic actuation for applications like MEMS switches and variable capacitors. In order to facilitate more flexibility for MEMS designers, the process can fabricate dimples that can be conductive or nonconductive. Additionally, this SU-8 process can fabricate SU-8 MEMS structures of a single layer of two different thicknesses. Process parameters were optimized for two sets of thicknesses: thin (5-10 m) and thick (130 m). The process was tested fabricating MEMS switches, capacitors and thermal actuators. © 2013 IOP Publishing Ltd.

  15. Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells

    Directory of Open Access Journals (Sweden)

    Yang-Shin Lin

    2011-01-01

    Full Text Available The amorphous silicon/amorphous silicon (a-Si/a-Si tandem solar cells have attracted much attention in recent years, due to the high efficiency and low manufacturing cost compared to the single-junction a-Si solar cells. In this paper, the tandem cells are fabricated by high-frequency plasma-enhanced chemical vapor deposition (HF-PECVD at 27.1 MHz. The effects of the recombination layer and the i-layer thickness matching on the cell performance have been investigated. The results show that the tandem cell with a p+ recombination layer and i2/i1 thickness ratio of 6 exhibits a maximum efficiency of 9.0% with the open-circuit voltage (Voc of 1.59 V, short-circuit current density (Jsc of 7.96 mA/cm2, and a fill factor (FF of 0.70. After light-soaking test, our a-Si/a-Si tandem cell with p+ recombination layer shows the excellent stability and the stabilized efficiency of 8.7%.

  16. Human health and ecological toxicity potentials due to heavy metal content in waste electronic devices with flat panel displays

    International Nuclear Information System (INIS)

    Lim, Seong-Rin; Schoenung, Julie M.

    2010-01-01

    Display devices such as cathode-ray tube (CRT) televisions and computer monitors are known to contain toxic substances and have consequently been banned from disposal in landfills in the State of California and elsewhere. New types of flat panel display (FPD) devices, millions of which are now purchased each year, also contain toxic substances, but have not previously been systematically studied and compared to assess the potential impact that could result from their ultimate disposal. In the current work, the focus is on the evaluation of end-of-life toxicity potential from the heavy metal content in select FPD devices with the intent to inform material selection and design-for-environment (DfE) decisions. Specifically, the metals antimony, arsenic, barium, beryllium, cadmium, chromium, cobalt, copper, lead, mercury, molybdenum, nickel, selenium, silver, vanadium, and zinc in plasma TVs, LCD (liquid crystal display) TVs, LCD computer monitors and laptop computers are considered. The human health and ecotoxicity potentials are evaluated through a life cycle assessment perspective by combining data on the respective heavy metal contents, the characterization factors in the U.S. EPA Tool for the Reduction and Assessment of Chemical and other environmental Impacts (TRACI), and a pathway and impact model. Principal contributors to the toxicity potentials are lead, arsenic, copper, and mercury. Although the heavy metal content in newer flat panel display devices creates less human health toxicity potential than that in CRTs, for ecological toxicity, the new devices are worse, especially because of the mercury in LCD TVs and the copper in plasma TVs.

  17. Human health and ecological toxicity potentials due to heavy metal content in waste electronic devices with flat panel displays.

    Science.gov (United States)

    Lim, Seong-Rin; Schoenung, Julie M

    2010-05-15

    Display devices such as cathode-ray tube (CRT) televisions and computer monitors are known to contain toxic substances and have consequently been banned from disposal in landfills in the State of California and elsewhere. New types of flat panel display (FPD) devices, millions of which are now purchased each year, also contain toxic substances, but have not previously been systematically studied and compared to assess the potential impact that could result from their ultimate disposal. In the current work, the focus is on the evaluation of end-of-life toxicity potential from the heavy metal content in select FPD devices with the intent to inform material selection and design-for-environment (DfE) decisions. Specifically, the metals antimony, arsenic, barium, beryllium, cadmium, chromium, cobalt, copper, lead, mercury, molybdenum, nickel, selenium, silver, vanadium, and zinc in plasma TVs, LCD (liquid crystal display) TVs, LCD computer monitors and laptop computers are considered. The human health and ecotoxicity potentials are evaluated through a life cycle assessment perspective by combining data on the respective heavy metal contents, the characterization factors in the U.S. EPA Tool for the Reduction and Assessment of Chemical and other environmental Impacts (TRACI), and a pathway and impact model. Principal contributors to the toxicity potentials are lead, arsenic, copper, and mercury. Although the heavy metal content in newer flat panel display devices creates less human health toxicity potential than that in CRTs, for ecological toxicity, the new devices are worse, especially because of the mercury in LCD TVs and the copper in plasma TVs. Copyright (c) 2009 Elsevier B.V. All rights reserved.

  18. Performance quantification of a flat-panel imager in industrial mega-voltage X-ray imaging systems

    International Nuclear Information System (INIS)

    Stritt, Carina; Plamondon, Mathieu; Hofmann, Jürgen; Flisch, Alexander; Sennhauser, Urs

    2017-01-01

    Active matrix flat-panel detectors have gained popularity amongst X-ray imaging systems due to their speed, resolution and high dynamic range. With appropriate shielding modern flat-panel imagers can even be used in high energy Computed Tomography (CT) systems of energies up to several mega-electronvolt (MeV). However, the performance of a digital detector is not independent of the rest of the radiographic system but depends on all other components of the system. Signal and noise transfer properties highly depend on all parameters of an imaging chain. This work focuses on quantifying the resolution capabilities and the noise in the signals of a MeV X-ray imaging system. The performance quantification is done by computing the modulation transfer function (MTF) using the standard edge method as well as the noise power spectrum (NPS) of the imaging system. We performed Monte Carlo (MC) simulations in order to understand the influence of scattered radiation on the measurements. A comparison of the horizontal and vertical MTF showed that the imaging behaviour of the detector is isotropic. Moreover, an additional investigation of the noise performance of the system showed that there is no measurable noise correlation present in the system. It was shown that the thickness of the edge device does not have a significant influence on the resulting system MTF. A rapid drop in the visibility could be observed resulting in a value of 1.2 line pairs per mm at 50% MTF. The visibility limit of line pair patterns was found to be at 2.3 line pairs per mm given by the 10% MTF value.

  19. Surface modification of aluminum nitride by polysilazane and its polymer-derived amorphous silicon oxycarbide ceramic for the enhancement of thermal conductivity in silicone rubber composite

    Science.gov (United States)

    Chiu, Hsien Tang; Sukachonmakul, Tanapon; Kuo, Ming Tai; Wang, Yu Hsiang; Wattanakul, Karnthidaporn

    2014-02-01

    Polysilazane (PSZ) and its polymer-derived amorphous silicon oxycarbide (SiOC) ceramic were coated on aluminum nitride (AlN) by using a dip-coating method to allow moisture-crosslinking of PSZ on AlN, followed by heat treatment at 700 °C in air to convert PSZ into SiOC on AlN. The results from FTIR, XPS and SEM indicated that the surface of AlN was successfully coated by PSZ and SiOC film. It was found that the introduction of PSZ and SiOC film help improve in the interfacial adhesion between the modified AlN (PSZ/AlN and SiOC/AlN) and silicone rubber lead to the increase in the thermal conductivity of the composites since the thermal boundary resistance at the filler-matrix interface was decreased. However, the introduction of SiOC as an intermediate layer between AlN and silicone rubber could help increase the thermal energy transport at the filler-matrix interface rather than using PSZ. This result was due to the decrease in the surface roughness and thickness of SiOC film after heat treatment at 700 °C in air. Thus, in the present work, a SiOC ceramic coating could provide a new surface modification for the improvement of the interfacial adhesion between the thermally conductive filler and the matrix in which can enhance the thermal conductivity of the composites.

  20. Modelling the drying of three-dimensional pulp moulded structures. Part II, Drying data obtained from flat panels using virgin and recycled paper fibre

    Science.gov (United States)

    John F. Hunt; Margit. Tamasy-Bano; Heike. Nyist

    1999-01-01

    A three-dimensional structural panel, called FPL Spaceboard, was developed at the USDA Forest Products Laboratory. Spaceboard panels have been formed using a variety of fibrous materials using either a wet- or dry-forming process. Geometrically, the panel departs from the traditional two-dimensional flat panel by integrally forming an array of perpendicular ribs and...

  1. High-EPA Biomass from Nannochloropsis salina Cultivated in a Flat-Panel Photo-Bioreactor on a Process Water-Enriched Growth Medium

    DEFF Research Database (Denmark)

    Safafar, Hamed; Hass, Michael Z.; Møller, Per

    2016-01-01

    of Nannochloropsis salina in laboratory scale when compared to algae cultivated in standard F/2 medium. Data from laboratory scale translated to the large scaleusing a 4000 L flat panel photo-bioreactor system. The algae growth rate in winter conditions in Denmark was slow, but results revealed that large...

  2. Optical properties of amorphous hydrogenated and microcrystalline silicon films prepared by plasma enhanced chemical vapor deposition and re-crystallized at moderate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Netrvalova, Marie; Prusakova, Lucie; Sutta, Pavol [New Technologies - Research Centre, University of West Bohemia, Univerzitni 8, 30614 Plzen (Czech Republic); Mullerova, Jarmila [Faculty of Electrical Engineering, University of Zilina, ul. kpt. J. Nalepku 1390, 03101 Liptovsky Mikulas (Slovakia)

    2011-09-15

    Amorphous hydrogenated silicon films different in thickness (600 - 2400 nm) were deposited by plasma enhanced chemical vapour deposition on Corning glass substrates at 250 C using silan 10% / argon 90% gas mixture. The samples were consequently isothermally heated in a high temperature vacuum chamber at 0.1 Pa and at temperatures from 580 to 620 C. In order to evaluate structural and optical properties of the films X-ray diffraction analysis, Raman spectrometry and optical spectrophotometry were used. Crystalline state (amorphous or microcrystalline), optical band gaps, refractive indices, extinction coefficients, absorption coefficients were determined. X-ray diffraction analysis indicated that originally deposited films were amorphous with different degree of homogeneity depending on the film thickness. After the heat treatment the films became polycrystalline with crystallite sizes 40-50 nm without particular dependence on the recrystallization process used. Raman spectrometry confirmed the results obtained from X-ray diffraction and furthermore revealed the residual amorphous phase 20-25% in volume. Optical spectrophotometry has shown that the values of refractive indices of thermally treated films approach the mono-crystalline silicon refractive index. Extinction coefficients of the thermally treated films are slightly higher than those for monocrystalline silicon. Absorption coefficients for thermally treated films reached quite high values near the absorption edge of the original amorphous material, which can be advantageous for tandem solar cell technologies. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Transmission Electron Microscopy of Amorphous Tandem Thin-Film Silicon Modules Produced by A Roll-to-Roll Process on Plastic Foil

    DEFF Research Database (Denmark)

    Couty, P.; Duchamp, Martial; Söderström, K.

    2011-01-01

    An improvement of the photo-current is expected when amorphous silicon solar cells are grown on a ZnO texture. A full understanding of the relationship between cell structure and electrical performance is essential for the rapid development of high efficiency VHF-tandem cells on textured substrat...

  4. Preparation and Characterisation of Amorphous-silicon Photovoltaic Devices Having Microcrystalline Emitters; Preparacion y Caracterizacion de Dispositivos Fotovoltaicos de Silicio Amorfo con Emisiones Microcristalinos

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, M. T.; Gandia, J. J.; Carabe, J. [CIEMAT. Madrid (Spain)

    1999-11-01

    The present work summarises the essential aspects of the research carried out so far at CIEMAT on amorphous-silicon solar cells. The experience accumulated on the preparation and characterisation of amorphous and microcrystalline silicon has allowed to start from intrinsic (absorbent) and p-and n-type (emitters) materials not only having excellent optoelectronic properties, but enjoying certain technological advantages with respect to those developed by other groups. Among these are absorbent-layer growth rates between 5 and 10 times as fast as conventional ones and microcrystalline emitters prepared without using hydrogen. The preparation of amorphous-silicon cells has required the solution of a number of problems, such as those related to pinholes, edge leak currents and diffusion of metals into the semiconductor. Once such constraints have been overcome, it has been demonstrated not only that the amorphous-silicon technology developed at CIEMAT is valid for making solar cells, but also that the quality of the semiconductor material is good for the application according to the partial results obtained. The development of thin-film laser-scribing technology is considered essential. Additionally it has been concluded that cross contamination, originated by the fact of using a single-chamber reactor, is the basic factor limiting the quality of the cells developed at CIEMAT. The present research activity is highly focused on the solution of this problem. (Author)

  5. Low-temperature high-mobility amorphous IZO for silicon heterojunction solar cells

    Czech Academy of Sciences Publication Activity Database

    Morales-Masis, M.; de Nicolas, S.M.; Holovský, Jakub; De Wolf, S.; Ballif, C.

    2015-01-01

    Roč. 5, č. 5 (2015), s. 1340-1347 ISSN 2156-3381 R&D Projects: GA ČR(CZ) GA14-05053S Institutional support: RVO:68378271 Keywords : solar cells * amorphous * ITO * TCO Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2015

  6. FY 1998 annual summary report on comprehensive development study of high-function flat panel display techniques (second year); 1998 nendo koseino flat panel display gijutsu no sogo kaihatsu kenkyu seika hokokusho. Daininendo

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    This project is aimed at creation of the new world display industry in Shikoku by developing the high-function flat panel display techniques and thereby establishing new techniques which solve the problems involved in, e.g., LEDs, plasma-aided devices and ELs other than liquid crystal devices. For development of emitters using diamond, important results have been obtained for the morphology, and cathode luminescence, Raman and photoluminescence spectra of polycrystalline diamond, synthesized by the vapor-phase process under varying conditions, on the electron radiation characteristics of the emitters. These results have led to clarification of the optimum vapor-phase synthesis conditions for diamond for high-function emitters. The techniques utilizing focused ion beams have also advanced to develop thin polycrystalline diamond films for emitters which correspond to the image elements of quality for television. For electron emitters, a structure prepared by implantation without using a high electrical field is proposed, and the device mechanisms involved are clarified. (NEDO)

  7. Empirical binary tomography calibration (EBTC) for the precorrection of beam hardening and scatter for flat panel CT.

    Science.gov (United States)

    Grimmer, Rainer; Kachelriess, Marc

    2011-04-01

    Scatter and beam hardening are prominent artifacts in x-ray CT. Currently, there is no precorrection method that inherently accounts for tube voltage modulation and shaped prefiltration. A method for self-calibration based on binary tomography of homogeneous objects, which was proposed by B. Li et al. ["A novel beam hardening correction method for computed tomography," in Proceedings of the IEEE/ICME International Conference on Complex Medical Engineering CME 2007, pp. 891-895, 23-27 May 2007], has been generalized in order to use this information to preprocess scans of other, nonbinary objects, e.g., to reduce artifacts in medical CT applications. Further on, the method was extended to handle scatter besides beam hardening and to allow for detector pixel-specific and ray-specific precorrections. This implies that the empirical binary tomography calibration (EBTC) technique is sensitive to spectral effects as they are induced by the heel effect, by shaped prefiltration, or by scanners with tube voltage modulation. The presented method models the beam hardening correction by using a rational function, while the scatter component is modeled using the pep model of B. Ohnesorge et al. ["Efficient object scatter correction algorithm for third and fourth generation CT scanners," Eur. Radiol. 9(3), 563-569 (1999)]. A smoothness constraint is applied to the parameter space to regularize the underdetermined system of nonlinear equations. The parameters determined are then used to precorrect CT scans. EBTC was evaluated using simulated data of a flat panel cone-beam CT scanner with tube voltage modulation and bow-tie prefiltration and using real data of a flat panel cone-beam CT scanner. In simulation studies, where the ground truth is known, the authors' correction model proved to be highly accurate and was able to reduce beam hardening by 97% and scatter by about 75%. Reconstructions of measured data showed significantly less artifacts than the standard reconstruction

  8. Noise, sampling, and the number of projections in cone-beam CT with a flat-panel detector

    International Nuclear Information System (INIS)

    Zhao, Z.; Gang, G. J.; Siewerdsen, J. H.

    2014-01-01

    Purpose: To investigate the effect of the number of projection views on image noise in cone-beam CT (CBCT) with a flat-panel detector. Methods: This fairly fundamental consideration in CBCT system design and operation was addressed experimentally (using a phantom presenting a uniform medium as well as statistically motivated “clutter”) and theoretically (using a cascaded systems model describing CBCT noise) to elucidate the contributing factors of quantum noise (σ Q ), electronic noise (σ E ), and view aliasing (σ view ). Analysis included investigation of the noise, noise-power spectrum, and modulation transfer function as a function of the number of projections (N proj ), dose (D tot ), and voxel size (b vox ). Results: The results reveal a nonmonotonic relationship between image noise andN proj at fixed total dose: for the CBCT system considered, noise decreased with increasing N proj due to reduction of view sampling effects in the regime N proj proj due to increased electronic noise. View sampling effects were shown to depend on the heterogeneity of the object in a direct analytical relationship to power-law anatomical clutter of the form κ/f  β —and a general model of individual noise components (σ Q , σ E , and σ view ) demonstrated agreement with measurements over a broad range in N proj , D tot , and b vox . Conclusions: The work elucidates fairly basic elements of CBCT noise in a manner that demonstrates the role of distinct noise components (viz., quantum, electronic, and view sampling noise). For configurations fairly typical of CBCT with a flat-panel detector (FPD), the analysis reveals a “sweet spot” (i.e., minimum noise) in the rangeN proj ∼ 250–350, nearly an order of magnitude lower in N proj than typical of multidetector CT, owing to the relatively high electronic noise in FPDs. The analysis explicitly relates view aliasing and quantum noise in a manner that includes aspects of the object (“clutter”) and imaging chain

  9. Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual subcontract report, April 1, 1994--March 31, 1995

    Energy Technology Data Exchange (ETDEWEB)

    Gordon, R.G. [Harvard Univ., Cambridge, MA (United States)

    1995-10-01

    Transparent and reflecting electrodes are important parts of the structure of amorphous silicon solar cells. We report improved methods for depositing zinc oxide, deposition of tin nitride as a potential reflection-enhancing diffusion barrier between the a-Si and back metal electrodes. Highly conductive and transparent fluorine-doped zinc oxide was successfully produced on small areas by atmospheric pressure CVD from a less hazardous zinc precursor, zinc acetylacetonate. The optical properties measured for tin nitride showed that the back-reflection would be decreased if tin nitride were used instead of zinc oxide as a barrier layer over silver on aluminum. Niobium-doped titanium dioxide was produced with high enough electrical conductivity so that normal voltages and fill factors were obtained for a-Si cells made on it.

  10. Enhanced efficiency of hybrid amorphous silicon solar cells based on single-walled carbon nanotubes and polymer composite thin film

    Science.gov (United States)

    Rajanna, Pramod M.; Gilshteyn, Evgenia P.; Yagafarov, Timur; Aleekseeva, Alena K.; Anisimov, Anton S.; Neumüller, Alex; Sergeev, Oleg; Bereznev, Sergei; Maricheva, Jelena; Nasibulin, Albert G.

    2018-03-01

    We report a simple approach to fabricate hybrid solar cells (HSCs) based on a single-walled carbon nanotube (SWCNT) film and thin film hydrogenated amorphous silicon (a-Si:H). Randomly oriented high-quality SWCNTs with conductivity enhanced by means of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate are used as a window layer and a front electrode. A series of HSCs are fabricated in ambient conditions with varying SWCNT film thicknesses. The polymethylmethacrylate layer drop-casted on fabricated HSCs reduces the reflection fourfold and enhances the short-circuit J sc , open-circuit V oc , and efficiency by nearly 10%. A state-of-the-art J-V performance is shown for SWCNT/a-Si HSC with an open-circuit voltage of 900 mV and an efficiency of 3.4% under simulated one-sun AM 1.5 G direct illumination.

  11. Annealing Kinetic Model Using Fast and Slow Metastable Defects for Hydrogenated-Amorphous-Silicon-Based Solar Cells

    Directory of Open Access Journals (Sweden)

    Seung Yeop Myong

    2007-01-01

    Full Text Available The two-component kinetic model employing “fast” and “slow” metastable defects for the annealing behaviors in pin-type hydrogenated-amorphous-silicon- (a-Si:H- based solar cells is simulated using a normalized fill factor. Reported annealing data on pin-type a-Si:H-based solar cells are revisited and fitted using the model to confirm its validity. It is verified that the two-component model is suitable for fitting the various experimental phenomena. In addition, the activation energy for annealing of the solar cells depends on the definition of the recovery time. From the thermally activated and high electric field annealing behaviors, the plausible microscopic mechanism on the defect removal process is discussed.

  12. Chemiluminescence lateral flow immunoassay cartridge with integrated amorphous silicon photosensors array for human serum albumin detection in urine samples.

    Science.gov (United States)

    Zangheri, Martina; Di Nardo, Fabio; Mirasoli, Mara; Anfossi, Laura; Nascetti, Augusto; Caputo, Domenico; De Cesare, Giampiero; Guardigli, Massimo; Baggiani, Claudio; Roda, Aldo

    2016-12-01

    A novel and disposable cartridge for chemiluminescent (CL)-lateral flow immunoassay (LFIA) with integrated amorphous silicon (a-Si:H) photosensors array was developed and applied to quantitatively detect human serum albumin (HSA) in urine samples. The presented analytical method is based on an indirect competitive immunoassay using horseradish peroxidase (HRP) as a tracer, which is detected by adding the luminol/enhancer/hydrogen peroxide CL cocktail. The system comprises an array of a-Si:H photosensors deposited on a glass substrate, on which a PDMS cartridge that houses the LFIA strip and the reagents necessary for the CL immunoassay was optically coupled to obtain an integrated analytical device controlled by a portable read-out electronics. The method is simple and fast with a detection limit of 2.5 mg L -1 for HSA in urine and a dynamic range up to 850 mg L -1 , which is suitable for measuring physiological levels of HSA in urine samples and their variation in different diseases (micro- and macroalbuminuria). The use of CL detection allowed accurate and objective analyte quantification in a dynamic range that extends from femtomoles to picomoles. The analytical performances of this integrated device were found to be comparable with those obtained using a charge-coupled device (CCD) as a reference off-chip detector. These results demonstrate that integrating the a-Si:H photosensors array with CL-LFIA technique provides compact, sensitive and low-cost systems for CL-based bioassays with a wide range of applications for in-field and point-of-care bioanalyses. Graphical Abstract A novel integrated portable device was developed for direct quantitative detection of human serum albumin (HSA) in urine samples, exploiting a chemiluminescence lateral flow immunoassay (LFIA). The device comprises a cartridge that holds the LFIA strip and all the reagents necessary for the analysis, an array of amorphous silicon photosensors, and a custom read-out electronics.

  13. Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching

    International Nuclear Information System (INIS)

    Boukezzata, A.; Keffous, A.; Cheriet, A.; Belkacem, Y.; Gabouze, N.; Manseri, A.; Nezzal, G.; Kechouane, M.; Bright, A.; Guerbous, L.; Menari, H.

    2010-01-01

    In this work, we present the formation of porous layers on hydrogenated amorphous SiC (a-SiC: H) by Ag-assisted photochemical etching using HF/K 2 S 2 O 8 solution under UV illumination at 254 nm wavelength. The amorphous films a-SiC: H were elaborated by d.c. magnetron sputtering using a hot pressed polycrystalline 6H-SiC target. Because of the high resistivity of the SiC layer, around 1.6 MΩ cm and in order to facilitate the chemical etching, a thin metallic film of high purity silver (Ag) has been deposited under vacuum onto the thin a-SiC: H layer. The etched surface was characterized by scanning electron microscopy, secondary ion mass spectroscopy, infrared spectroscopy and photoluminescence. The results show that the morphology of etched a-SiC: H surface evolves with etching time. For an etching time of 20 min the surface presents a hemispherical crater, indicating that the porous SiC layer is perforated. Photoluminescence characterization of etched a-SiC: H samples for 20 min shows a high and an intense blue PL, whereas it has been shown that the PL decreases for higher etching time. Finally, a dissolution mechanism of the silicon carbide in 1HF/1K 2 S 2 O 8 solution has been proposed.

  14. Amorphization and recrystallization processes in monocrystalline beta silicon carbide thin films

    International Nuclear Information System (INIS)

    Edmond, J.A.; Withrow, S.P.; Kong, H.S.; Davis, R.F.

    1985-01-01

    Individual, as well as multiple doses of 27 Al + , 31 P + , 28 Si + , and 28 Si + and 12 C + , were implanted into (100) oriented monocrystalline β-SiC films. The critical energy of approx. =16 eV/atom required for the amorphization of β-SiC via implantation of 27 Al + and 31 P + was determined using the TRIM84 computer program for calculation of the damage-energy profiles coupled with the results of RBS/ion channeling analyses. In order to recrystallize amorphized layers created by the individual implantation of all four ion species, thermal annealing at 1600, 1700, or 1800 0 C was employed. Characterization of the recrystallized layers was performed using XTEM. Examples of SPE regrown layers containing precipitates and dislocation loops, highly faulted-microtwinned regions, and random crystallites were observed

  15. Silicon Monoxide at 1 atm and Elevated Pressures: Crystalline or Amorphous?

    KAUST Repository

    AlKaabi, Khalid

    2014-03-05

    The absence of a crystalline SiO phase under ordinary conditions is an anomaly in the sequence of group 14 monoxides. We explore theoretically ordered ground-state and amorphous structures for SiO at P = 1 atm, and crystalline phases also at pressures up to 200 GPa. Several competitive ground-state P = 1 atm structures are found, perforce with Si-Si bonds, and possessing Si-O-Si bridges similar to those in silica (SiO2) polymorphs. The most stable of these static structures is enthalpically just a little more stable than a calculated random bond model of amorphous SiO. In that model we find no segregation into regions of amorphous Si and amorphous SiO2. The P = 1 atm structures are all semiconducting. As the pressure is increased, intriguing new crystalline structures evolve, incorporating Si triangular nets or strips and stishovite-like regions. A heat of formation of crystalline SiO is computed; it is found to be the most negative of all the group 14 monoxides. Yet, given the stability of SiO2, the disproportionation 2SiO (s) → Si(s)+SiO2(s) is exothermic, falling right into the series of group 14 monoxides, and ranging from a highly negative ΔH of disproportionation for CO to highly positive for PbO. There is no major change in the heat of disproportionation with pressure, i.e., no range of stability of SiO with respect to SiO2. The high-pressure SiO phases are metallic. © 2014 American Chemical Society.

  16. Non-negligible Contributions to Thermal Conductivity From Localized Modes in Amorphous Silicon Dioxide

    OpenAIRE

    Lv, Wei; Henry, Asegun

    2016-01-01

    Thermal conductivity is an important property for almost all applications involving heat transfer, ranging from energy and microelectronics to food processing and textiles. The theory and modeling of crystalline materials is in some sense a solved problem, where one can now calculate the thermal conductivity of any crystalline line compound from first principles [1,2] using expressions based on the phonon gas model (PGM)[3,4]. However, modeling of amorphous materials still has many open quest...

  17. Image quality and effective dose of a robotic flat panel 3D C-arm vs computed tomography.

    Science.gov (United States)

    Kraus, Michael; Fischer, Eric; Gebhard, Florian; Richter, Peter H

    2016-12-01

    The aim of this study was to determine the effective dose and corresponding image quality of different imaging protocols of a robotic 3D flat panel C-arm in comparison to computed tomography (CT). Dose measurements were performed using a Rando-Alderson Phantom. The phantom was exposed to different scanning protocols of the 3D C-arm and the CT. Pedicle screws were inserted in a fresh swine cadaver. Images were obtained using the same scanning protocols. At the thoracolumbar junction, the effective dose was comparable for 3D high-dose protocols, with (4.4 mSv) and without (4.3 mSv) collimation and routine CT (5 mSv), as well as a dose-reduction CT (4.0 mSv). A relevant reduction was achieved with the 3D low-dose protocol (1.0 mSv). Focusing on Th6, a similar reduction with the 3D low-dose protocol was achieved. The image quality of the 3D protocols using titanium screws was rated as 'good' by all viewers, with excellent correlation. Modern intra-operative 3D-C-arms produce images of CT-like quality with low-dose radiation. Copyright © 2015 John Wiley & Sons, Ltd. Copyright © 2015 John Wiley & Sons, Ltd.

  18. High-resolution dynamic angiography using flat-panel volume CT: feasibility demonstration for neuro and lower limb vascular applications

    Energy Technology Data Exchange (ETDEWEB)

    Mehndiratta, Amit [Massachusetts General Hospital, Department of Radiology, Harvard Medical School, Boston, MA (United States); University of Oxford, Institute of Biomedical Engineering and Keble College, Oxford (United Kingdom); Indian Institute of Technology Delhi and All India Institute of Medical Science, Centre for Biomedical Engineering, New Delhi (India); Rabinov, James D. [Massachusetts General Hospital, Interventional Neuroradiology, Harvard Medical School, Boston, MA (United States); Grasruck, Michael [Siemens Medical Solutions, Forchheim (Germany); Liao, Eric C. [Massachusetts General Hospital, Department of Plastic and Reconstructive Surgery and Center for Regenerative Medicine, Harvard Medical School, Boston, MA (United States); Crandell, David [Spaulding Rehabilitation Hospital, Department of Physical Medicine and Rehabilitation, Harvard Medical School, Charlestown, MA (United States); Gupta, Rajiv [Massachusetts General Hospital, Department of Radiology, Harvard Medical School, Boston, MA (United States)

    2015-07-15

    This paper evaluates a prototype flat-panel volume CT (fpVCT) for dynamic in vivo imaging in a variety of neurovascular and lower limb applications. Dynamic CTA was performed on 12 patients (neuro = 8, lower limb = 4) using an fpVCT with 120 kVp, 50 mA, rotation time varying from 8 to 19 s, and field of view of 25 x 25 x 18 cm{sup 3}. Four-dimensional data sets (i.e. 3D images over time) were reconstructed and reviewed. Dynamic CTA demonstrated sufficient spatio-temporal resolution to elucidate first-pass and recirculation dynamics of contrast bolus through neurovasclar pathologies and phasic blood flow though lower-limb vasculature and grafts. The high spatial resolution of fpVCT resulted in reduced partial volume and metal beam-hardening artefacts. This facilitated assessment of vascular lumen in the presence of calcified plaque and evaluation of fractures, especially in the presence of fixation hardware. Evaluation of arteriovenous malformation using dynamic fpVCT angiography was of limited utility. Dynamic CTA using fpVCT can visualize time-varying phenomena in neuro and lower limb vascular applications and has sufficient diagnostic imaging quality to evaluate a number of pathologies affecting these regions. (orig.)

  19. High-resolution dynamic angiography using flat-panel volume CT: feasibility demonstration for neuro and lower limb vascular applications

    International Nuclear Information System (INIS)

    Mehndiratta, Amit; Rabinov, James D.; Grasruck, Michael; Liao, Eric C.; Crandell, David; Gupta, Rajiv

    2015-01-01

    This paper evaluates a prototype flat-panel volume CT (fpVCT) for dynamic in vivo imaging in a variety of neurovascular and lower limb applications. Dynamic CTA was performed on 12 patients (neuro = 8, lower limb = 4) using an fpVCT with 120 kVp, 50 mA, rotation time varying from 8 to 19 s, and field of view of 25 x 25 x 18 cm 3 . Four-dimensional data sets (i.e. 3D images over time) were reconstructed and reviewed. Dynamic CTA demonstrated sufficient spatio-temporal resolution to elucidate first-pass and recirculation dynamics of contrast bolus through neurovasclar pathologies and phasic blood flow though lower-limb vasculature and grafts. The high spatial resolution of fpVCT resulted in reduced partial volume and metal beam-hardening artefacts. This facilitated assessment of vascular lumen in the presence of calcified plaque and evaluation of fractures, especially in the presence of fixation hardware. Evaluation of arteriovenous malformation using dynamic fpVCT angiography was of limited utility. Dynamic CTA using fpVCT can visualize time-varying phenomena in neuro and lower limb vascular applications and has sufficient diagnostic imaging quality to evaluate a number of pathologies affecting these regions. (orig.)

  20. C-arm flat-panel CT arthrography of the shoulder: Radiation dose considerations and preliminary data on diagnostic performance

    Energy Technology Data Exchange (ETDEWEB)

    Guggenberger, Roman; Ulbrich, Erika J.; Kaelin, Pascal; Pfammatter, Thomas; Alkadhi, Hatem; Andreisek, Gustav [University Hospital Zurich, Institute of Diagnostic and Interventional Radiology, Zuerich (Switzerland); Dietrich, Tobias J. [Balgrist University Hospital, Department of Radiology, Zurich (Switzerland); Scholz, Rosemarie; Koehler, Christoph; Elsaesser, Thilo [Siemens Healthcare GmbH, Business Area Advanced Therapies, Forchheim (Germany); Le Corroller, Thomas [Aix-Marseille Universite, CNRS, ISM UMR 7287, Marseille (France); Radiology Department, APHM, Marseille (France)

    2017-02-15

    To investigate radiation dose and diagnostic performance of C-arm flat-panel CT (FPCT) versus standard multi-detector CT (MDCT) shoulder arthrography using MRI-arthrography as reference standard. Radiation dose of two different FPCT acquisitions (5 and 20 s) and standard MDCT of the shoulder were assessed using phantoms and thermoluminescence dosimetry. FPCT arthrographies were performed in 34 patients (mean age 44 ± 15 years). Different joint structures were quantitatively and qualitatively assessed by two independent radiologists. Inter-reader agreement and diagnostic performance were calculated. Effective radiation dose was markedly lower in FPCT 5 s (0.6 mSv) compared to MDCT (1.7 mSv) and FPCT 20 s (3.4 mSv). Contrast-to-noise ratios (CNRs) were significantly (p < 0.05) higher in FPCT 20-s versus 5-s protocols. Inter-reader agreements of qualitative ratings ranged between κ = 0.47-1.0. Sensitivities for cartilage and rotator cuff pathologies were low for FPCT 5-s (40 % and 20 %) and moderate for FPCT 20-s protocols (75 % and 73 %). FPCT showed high sensitivity (81-86 % and 89-99 %) for bone and acromioclavicular-joint pathologies. Using a 5-s protocol FPCT shoulder arthrography provides lower radiation dose compared to MDCT but poor sensitivity for cartilage and rotator cuff pathologies. FPCT 20-s protocol is moderately sensitive for cartilage and rotator cuff tendon pathology with markedly higher radiation dose compared to MDCT. (orig.)

  1. Characteristics and applications of a flat panel computer tomography system; Eigenschaften und Anwendungen der Flaechendetektor-basierten Volumen-Computertomographie

    Energy Technology Data Exchange (ETDEWEB)

    Knollmann, F.; Valencia, R.; Obenauer, S. [Abt. Diagnostische Radiologie, Klinikum der Georg-August-Univ. Goettingen (Germany); Buhk, J.H. [Abt. Neuroradiologie, Univ. Goettingen (Germany)

    2006-09-15

    Purpose: to assess a new flat panel volume computed tomography (FP-VCT) with very high isotropic spatial resolution as well as high Z-axis coverage. Materials and Methods: The prototype of an FP-VCT scanner with a detector cell size of 0.2 mm was used for numerous phantom studies, specimen examinations, and animal research projects. Results: The high spatial resolution of the new system can be used to accurately determine solid tumor volume, thus allowing for earlier assessment of the therapeutic response. In animal experimentation, whole-body perfusion mapping of mice is feasible. The high spatial resolution also improves the classification of coronary artery atherosclerotic plaques in the isolated post mortem human heart. With the depiction of intramyocardial segments of the coronary arteries, investigations of myocardial collateral circulation are feasible. In skeletal applications, an accurate analysis of the smallest bony structures, e.g., petrous bone and dental preparations, can be successfully performed, as well as investigations of repetitive studies of fracture healing and the treatment of osteoporosis. Conclusion: The introduction of FP-VCT opens up new applications for CT, including the field of molecular imaging, which are highly attractive for future clinical applications. Present limitations include limited temporal resolution and necessitate further improvement of the system. (orig.)

  2. Small animal imaging using a flat panel detector-based cone beam computed tomography (FPD-CBCT) imaging system

    Science.gov (United States)

    Conover, David L.; Ning, Ruola; Yu, Yong; Lu, Xianghua; Wood, Ronald W.; Reeder, Jay E.; Johnson, Aimee M.

    2005-04-01

    Flat panel detector-based cone beam CT (FPD-CBCT) imaging system prototypes have been constructed based on modified clinical CT scanners (a modified GE 8800 CT system and a modified GE HighSpeed Advantage (HSA) spiral CT system) each with a Varian PaxScan 2520 imager. The functions of the electromechanical and radiographic subsystems of the CT system were controlled through specially made hardware, software and data acquisition modules to perform animal cone beam CT studies. Small animal (mouse) imaging studies were performed to demonstrate the feasibility of an optimized CBCT imaging system to have the capability to perform longitudinal studies to monitor the progression of cancerous tumors or the efficacy of treatments. Radiographic parameters were optimized for fast (~10 second) scans of live mice to produce good reconstructed image quality with dose levels low enough to avoid any detectable radiation treatment to the animals. Specifically, organs in the pelvic region were clearly imaged and contrast studies showed the feasibility to visualize small vasculature and space-filling bladder tumors. In addition, prostate and mammary tumors were monitored in volume growth studies.

  3. Cross Talk Study to the Single Photon Response of a Flat Panel PMT for the RICH Upgrade at LHCb

    CERN Multimedia

    Arnaboldi, C; Calvi, M; Fanchini, E; Gotti, C; Maino, M; Matteuzzi, C; Perego, D L; Pessina, G; Wang, J C

    2009-01-01

    The Ring Imaging CHerenkov, RICH, detector at LHCb is now readout by Hybrid Photon Detectors. In view of its upgrade a possible option is the adoption of the flat panel Photon Multipliers Tubes, PMT. An important issue for the good determination of the rings produced in the sensitive media is a negligible level of cross talk. We have experimentally studied the cross talk from the 64x64 pixels of the H9500 PMT from Hamamatsu. Results have shown that at the single photon signal level, as expected at LHCb, the statistics applied to the small number of electrons generated at the first dynode of the PMT chain leads to a cross talk mechanism that must be interpreted in term of the percentage of the number of induced signals rather than on the amplitude of the induced signals. The threshold to suppress cross talk must be increased to a significant fraction of the single photon signal for the worst case. The number of electrons generated at the first dynode is proportional to the biasing voltage. Measurements have sh...

  4. Comparison of imaging properties of direct-type and indirect-type of flat-panel detector

    International Nuclear Information System (INIS)

    Matsumoto, Masao; Suekane, Koji; Ichimaru, Yasunobu; Ogata, Yuji; Inamura, Kiyonari; Kanai, Kouzou; Kanamori, Hitoshi

    2002-01-01

    A Flat-Panel Detector (FPD) has many advantages such as eliminating cassette handling and being able to display a preview image immediately in addition to the digital image processing and the networking. Thus, the FPD has ability to innovate the radiology department. We measured and evaluated the digital and over-all imaging properties (characteristic curves, modulation Transfer Functions, Wiener spectra and Noise Equivalent Quanta (NEQ) for the direct-type and indirect-type of FPD. The pre-sampling and overall NEQ of the indirect-type of FPD were better than the NEQ of the direct-type of FPD at lower spatial frequencies, but were worse at higher spatial frequencies. The FPD can take image data at real-time and be easy to digitalize. From these results, Screen/Film system and Computed Radiography system will be replaced by the FPD system, together with diffusion of CAD, cone beam Computed Tomography (CT) system and open-type Magnetic Resonance Imagining (MRI) system. (T. Tanaka)

  5. Subarachnoid hyperattenuation on flat panel detector-based conebeam CT immediately after uneventful coil embolization of unruptured intracranial aneurysms.

    Science.gov (United States)

    Shinohara, Y; Sakamoto, M; Takeuchi, H; Uno, T; Watanabe, T; Kaminou, T; Ogawa, T

    2013-03-01

    Flat panel detector-based CBCT can provide CT-like images of the brain without transferring patients from the angiography suite to a conventional CT facility. Conventional brain CT after uneventful endovascular treatment sometimes shows focal subarachnoid hyperattenuation with contrast leakage, mimicking SAH. Differentiating this finding from SAH is important for immediate postprocedural medical management. We investigated CBCT for detecting subarachnoid hyperattenuation immediately after coil embolization of unruptured cerebral aneurysms. Thirty-six patients with unruptured cerebral aneurysms undergoing CBCT immediately after uncomplicated coil embolization were included. The relationship between the presence of subarachnoid hyperattenuation and total volume of contrast medium injected, aneurysm size and location, and balloon and stent assistance during embolization was investigated. Statistical analyses were performed with the χ(2) test (P < .05). Nine of the 36 patients (25.0%) showed focal subarachnoid hyperattenuation within the relevant parent artery territory harboring the aneurysm. Subarachnoid hyperattenuation locations included the ipsilateral superior frontal sulcus (n = 5), the bilateral superior frontal sulcus (n = 1), and the ipsilateral superior frontal and precentral sulci (n = 3). Statistically significant differences were observed between the presence of a subarachnoid hyperattenuation and the total volume of contrast medium injected (P < .001) and aneurysm size (P < .05). Subarachnoid hyperattenuation can be detected by CBCT immediately after coil embolization for unruptured aneurysms. The increased amounts of contrast medium to be given before CBCT and the specific location of the hyperattenuation may help differentiate benign subarachnoid contrast leakage from SAH.

  6. Visualization of novel microstents in patients with unruptured intracranial aneurysms with contrast-enhanced flat panel detector CT.

    Science.gov (United States)

    Poncyljusz, Wojciech; Zwarzany, Łukasz; Safranow, Krzysztof

    2015-07-01

    The aim of our study was to evaluate the feasibility of contrast-enhanced flat panel detector CT (FPDCT) for visualizing the novel microstents implanted in patients with unruptured wide-necked intracranial aneurysms. Forty-four cases of patients who underwent stent assisted coiling at our department were retrospectively analyzed. In each case, FPDCT images were performed after stent and coils deployment and then assessed in the terms of stent struts and all radiopaque markers and tantalum strands visibility separately using a 3-grade scale (1 - inadequate, 2 - good, 3 - excellent). Stent struts visibility was assessed to be inadequate for evaluation in all cases. All radiopaque markers and tantalum strands visibility was excellent in 61.4% and good in 38.6% of cases. We observed 4 (9.09%) cases of incomplete stent opening. Treated aneurysm size <10mm was an independent predictor of excellent stent all radiopaque markers and tantalum strands visibility (ρ=0.014). Contrast-enhanced FPDCT is feasible for visualizing stents implanted in patients with intracranial aneurysms as it gives precise visualization of the relationships between the stent tantalum strands and the vessel wall. Stents used in the treatment of aneurysms ≥10 mm in size are worse visualized because of the coil streaking artifacts. Copyright © 2015 Elsevier Ireland Ltd. All rights reserved.

  7. Development of Thin Film Amorphous Silicon Tandem Junction Based Photocathodes Providing High Open-Circuit Voltages for Hydrogen Production

    Directory of Open Access Journals (Sweden)

    F. Urbain

    2014-01-01

    Full Text Available Hydrogenated amorphous silicon thin film tandem solar cells (a-Si:H/a-Si:H have been developed with focus on high open-circuit voltages for the direct application as photocathodes in photoelectrochemical water splitting devices. By temperature variation during deposition of the intrinsic a-Si:H absorber layers the band gap energy of a-Si:H absorber layers, correlating with the hydrogen content of the material, can be adjusted and combined in a way that a-Si:H/a-Si:H tandem solar cells provide open-circuit voltages up to 1.87 V. The applicability of the tandem solar cells as photocathodes was investigated in a photoelectrochemical cell (PEC measurement set-up. With platinum as a catalyst, the a-Si:H/a-Si:H based photocathodes exhibit a high photocurrent onset potential of 1.76 V versus the reversible hydrogen electrode (RHE and a photocurrent of 5.3 mA/cm2 at 0 V versus RHE (under halogen lamp illumination. Our results provide evidence that a direct application of thin film silicon based photocathodes fulfills the main thermodynamic requirements to generate hydrogen. Furthermore, the presented approach may provide an efficient and low-cost route to solar hydrogen production.

  8. Comment on 'Ultrafast photoluminescence in quantum-confined silicon nanocrystals arises from an amorphous surface layer'

    Czech Academy of Sciences Publication Activity Database

    Kůsová, Kateřina; Ondič, Lukáš; Pelant, Ivan

    2015-01-01

    Roč. 2, č. 3 (2015), s. 454-455 ISSN 2330-4022 R&D Projects: GA ČR GPP204/12/P235 Institutional support: RVO:68378271 Keywords : silicon nanocrystals, ultrafast luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 5.404, year: 2015

  9. Comparison of photocurrent spectra measured by FTPS and CPM for amorphous silicon layers and solar cells

    Czech Academy of Sciences Publication Activity Database

    Holovský, Jakub; Poruba, Aleš; Purkrt, Adam; Remeš, Zdeněk; Vaněček, Milan

    2008-01-01

    Roč. 354, 19-25 (2008), s. 2167-2170 ISSN 0022-3093 R&D Projects: GA MŽP(CZ) SN/3/172/05 Keywords : silicon * solar cells * band structure * defects * optical properties * absorption * FTIR measurements * photoconductivity * medium-range order Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.449, year: 2008

  10. Clinical evaluation of digital angiographic system equipped with the Safire' flat-panel detector of a direct conversion type

    Energy Technology Data Exchange (ETDEWEB)

    Miura, Yoshiaki; Miura, Yusuke; Goto, Keiichi [Shimadzu Corporation, Medical Systems Division, Research and Development, Kyoto (JP)] [and others

    2003-06-01

    This report presents a report on clinical evaluation of our newly developed flat-panel X-ray detector of a direct conversion type, designed to provide images of a resolution higher than, or at least equal to, that ensured by X-ray photographic films, in clinical digital X-ray cinematography. This new detector was named 'Safire' the acronym of 'Shimadzu advanced flat imaging receptor', emphasizing its high technological level, such as the capability to ensure high quality of images. The clinical evaluation of Shimadzu DIGITEX Premier digital angiography system, equipped with this new flat-panel X-ray detector of a direct conversion type, has been started in March, 2003, at the Kokura Memorial Hospital in Kyushu, Japan. (author)

  11. Infrared picosecond absorption spectroscopy of microcrystalline silicon: separation between carrier recombination in crystalline and amorphous fractions

    Czech Academy of Sciences Publication Activity Database

    Kudrna, J.; Pelant, Ivan; Štěpánek, J.; Trojánek, F.; Malý, P.

    2002-01-01

    Roč. 74, - (2002), s. 253-256 ISSN 0947-8396 R&D Projects: GA AV ČR IAA1010809 Grant - others:GA UK(XC) 180/99 Institutional research plan: CEZ:AV0Z1010914 Keywords : ultra-fast carrier dynamics * hydrogenated microcrystalline silicon * picosecond pump and probe measurements * rate-equation model Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.231, year: 2002

  12. Selective Growth and SERS Property of Gold Nanoparticles on Amorphized Silicon Surface

    International Nuclear Information System (INIS)

    Matsuoka, T; Nishi, M; Sakakura, M; Shimotsuma, Y; Miura, K; Hirao, K

    2011-01-01

    We have fabricated gold patterns on a silicon substrate by a simple three-step method using a focused ion beam (FIB). The obtained gold patterns consisted of a large number of gold nanoparticles which grew selectively on the preprocessed silicon surface from an Au ion-containing solution dropped on the substrate. The solution was prepared by reacting HAuCl 4 aqueous solution with (3-mercaptopropyl)trimethoxysilane (MPTMS). It was found that the size and shape of the precipitating gold nanoparticles is controllable by changing the mixing ratio between HAuCl 4 aqueous solution and MPTMS. Additionally, we confirmed that the fabricated gold structures were surface enhanced Raman scattering (SERS)-active; the enhanced Raman peaks of rhodamin 6G (R6G) were detected on the fabricated gold structures, whereas no peak was detected on the alternative silicon surface. We also demonstrated the gold patterning using a femtosecond laser instead of an FIB. We believe that our method is a favorable candidate for fabricating SERS-active substrates, since the substrates can be prepared very simply and flexibly.

  13. Semi-automatic classification of skeletal morphology in genetically altered mice using flat-panel volume computed tomography.

    Directory of Open Access Journals (Sweden)

    Christian Dullin

    2007-07-01

    Full Text Available Rapid progress in exploring the human and mouse genome has resulted in the generation of a multitude of mouse models to study gene functions in their biological context. However, effective screening methods that allow rapid noninvasive phenotyping of transgenic and knockout mice are still lacking. To identify murine models with bone alterations in vivo, we used flat-panel volume computed tomography (fpVCT for high-resolution 3-D imaging and developed an algorithm with a computational intelligence system. First, we tested the accuracy and reliability of this approach by imaging discoidin domain receptor 2- (DDR2- deficient mice, which display distinct skull abnormalities as shown by comparative landmark-based analysis. High-contrast fpVCT data of the skull with 200 microm isotropic resolution and 8-s scan time allowed segmentation and computation of significant shape features as well as visualization of morphological differences. The application of a trained artificial neuronal network to these datasets permitted a semi-automatic and highly accurate phenotype classification of DDR2-deficient compared to C57BL/6 wild-type mice. Even heterozygous DDR2 mice with only subtle phenotypic alterations were correctly determined by fpVCT imaging and identified as a new class. In addition, we successfully applied the algorithm to classify knockout mice lacking the DDR1 gene with no apparent skull deformities. Thus, this new method seems to be a potential tool to identify novel mouse phenotypes with skull changes from transgenic and knockout mice on the basis of random mutagenesis as well as from genetic models. However for this purpose, new neuronal networks have to be created and trained. In summary, the combination of fpVCT images with artificial neuronal networks provides a reliable, novel method for rapid, cost-effective, and noninvasive primary screening tool to detect skeletal phenotypes in mice.

  14. Cone-beam CT with a flat-panel detector: From image science to image-guided surgery

    Science.gov (United States)

    Siewerdsen, Jeffrey H.

    2011-08-01

    The development of large-area flat-panel X-ray detectors (FPDs) has spurred investigation in a spectrum of advanced medical imaging applications, including tomosynthesis and cone-beam CT (CBCT). Recent research has extended image quality metrics and theoretical models to such applications, providing a quantitative foundation for the assessment of imaging performance as well as a general framework for the design, optimization, and translation of such technologies to new applications. For example, cascaded systems models of the Fourier domain metrics, such as noise-equivalent quanta (NEQ), have been extended to these modalities to describe the propagation of signal and noise through the image acquisition and reconstruction chain and to quantify the factors that govern spatial resolution, image noise, and detectability. Moreover, such models have demonstrated basic agreement with human observer performance for a broad range of imaging conditions and imaging tasks. These developments in image science have formed a foundation for the knowledgeable development and translation of CBCT to new applications in image-guided interventions—for example, CBCT implemented on a mobile surgical C-arm for intraoperative 3D imaging. The ability to acquire high-quality 3D images on demand during surgical intervention overcomes conventional limitations of surgical guidance in the context of preoperative images alone. A prototype mobile C-arm developed in academic-industry partnership demonstrates CBCT with low radiation dose, sub-mm spatial resolution, and soft-tissue visibility potentially approaching that of diagnostic CT. Integration of the 3D imaging system with real-time tracking, deformable registration, endoscopic video, and 3D visualization offers a promising addition to the surgical arsenal in interventions ranging from head-and-neck/skull base surgery to spine, orthopaedic, thoracic, and abdominal surgeries. Cadaver studies show the potential for significant boosts in

  15. Novel Na(+) doped Alq3 hybrid materials for organic light-emitting diode (OLED) devices and flat panel displays.

    Science.gov (United States)

    Bhagat, S A; Borghate, S V; Kalyani, N Thejo; Dhoble, S J

    2015-05-01

    Pure and Na(+) -doped Alq3 complexes were synthesized by a simple precipitation method at room temperature, maintaining a stoichiometric ratio. These complexes were characterized by X-ray diffraction, Fourier transform infrared (FTIR), UV/Vis absorption and photoluminescence (PL) spectra. The X-ray diffractogram exhibits well-resolved peaks, revealing the crystalline nature of the synthesized complexes, FTIR confirms the molecular structure and the completion of quinoline ring formation in the metal complex. UV/Vis absorption and PL spectra of sodium-doped Alq3 complexes exhibit high emission intensity in comparison with Alq3 phosphor, proving that when doped in Alq3 , Na(+) enhances PL emission intensity. The excitation spectra of the synthesized complexes lie in the range 242-457 nm when weak shoulders are also considered. Because the sharp excitation peak falls in the blue region of visible radiation, the complexes can be employed for blue chip excitation. The emission wavelength of all the synthesized complexes lies in the bluish green/green region ranging between 485 and 531 nm. The intensity of the emission wavelength was found to be elevated when Na(+) is doped into Alq3 . Because both the excitation and emission wavelengths fall in the visible region of electromagnetic radiation, these phosphors can also be employed to improve the power conversion efficiency of photovoltaic cells by using the solar spectral conversion principle. Thus, the synthesized phosphors can be used as bluish green/green light-emitting phosphors for organic light-emitting diodes, flat panel displays, solid-state lighting technology - a step towards the desire to reduce energy consumption and generate pollution free light. Copyright © 2014 John Wiley & Sons, Ltd.

  16. Flat-panel detector volumetric CT for visualization of subarachnoid hemorrhage and ventricles: preliminary results compared to conventional CT

    International Nuclear Information System (INIS)

    Doelken, M.; Struffert, T.; Richter, G.; Engelhorn, T.; Doerfler, A.; Nimsky, C.; Ganslandt, O.; Hammen, T.

    2008-01-01

    The aim of this study was to compare flat-panel volumetric CT (VCT) to conventional CT (cCT) in the visualization of the extent of subarachnoid hemorrhage (SAH) and the width of the ventricles in patients with acute SAH. Included in the study were 22 patients with an acutely ruptured cerebral aneurysm who received VCT during coil embolization. VCT image quality, the extent of SAH (using a modified Fisher score and total slice number with SAH visible) and the width of the ventricles (Evans index) were evaluated by two experienced neuroradiologists (RAD1 and RAD2) and compared to the findings on cCT. Ten patients undergoing VCT for reasons other than SAH served as negative controls. Interobserver agreement in rating image quality was excellent for cCT (Kendall W value 0.94) and good for VCT (0.74). SAH was identified by RAD1 and RAD2 on VCT images in all patients. The modified Fisher scores underestimated the extent of SAH on VCT images in comparison with cCT images. Pearson's correlation coefficient (r) regarding the number of image slices with SAH visible on cCT images compared with the number on VCT images was 0.85 for RAD1 and 0.84 for RAD2. The r value for the degree of interobserver agreement for the number of slices with SAH visible was 0.99 for cCT, and 0.95 for VCT images (n 19), respectively. The width of the ventricles measured in terms of the Evans Index showed excellent concordance between the modalities (r = 0.81 vs. 0.82). Our preliminary results indicate that VCT is helpful in evaluating SAH in the angiography suite. Additionally, reliable evaluation of ventricle width is feasible. However, there are limitations with regard to the visibility of SAH on VCT images in comparison to cCT images. (orig.)

  17. Percutaneous sacroplasty with the use of C-arm flat-panel detector CT: technical feasibility and clinical outcome

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Sung Eun; Lee, Joon Woo; Kim, Joo Hyung; Kang, Heung Sik [Seoul National University Bundang Hospital, Department of Radiology, Gyeonggi-do (Korea, Republic of); Park, Kun Woo; Yeom, Jin S. [Seoul National University Bundang Hospital, Department of Orthopaedic Surgery, Gyeonggi-do (Korea, Republic of)

    2011-04-15

    Sacroplasty for sacral insufficiency fractures (SIFs) has been performed mostly under computed tomography (CT) or fluoroscopy guidance. The purposes of this study are to describe technical tips and clinical outcomes of sacroplasty under C-arm flat panel detector CT (C-arm CT) guidance, and to compare the cement distributions shown on C-arm CT with those on multi-detector CT (MDCT). This study consisted of patients who underwent sacroplasty for SIF using C-arm CT from May 2006 to May 2009. Technical success was assessed in terms of cement filling and leakage. Clinical outcome was assessed at short-term (less than 1 month) and long-term (more than 1 month) follow-up using a four-grade patient satisfaction scale: poor, fair, good, and excellent. After sacroplasty, all patients underwent MDCT and three radiologists compared MDCT images with C-arm CT images in consensus, focusing on the cement distribution and cement leakage. Sacroplasties were performed on both sacral alae in all 8 patients (male:female = 2:6, mean age = 76.9, range = 63-82). The technical success rate was 100%. At short-term follow up, 6 patients (87.5%) reported significant improvement. Five patients (62.5%) were available for long-term follow-up and all 5 patients reported a reduced pain and an improved ability to ambulate. Using MDCT as the standard of reference, the cement distribution was visualized equally well by C-arm CT. Sacroplasty under C-arm CT showed excellent technical success and good clinical outcome. There was an excellent correlation between C-arm CT and MDCT in evaluating cement distribution and cement leakage. (orig.)

  18. X-ray performance of a wafer-scale CMOS flat panel imager for applications in medical imaging and nondestructive testing

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Bo Kyung, E-mail: goldrain99@kaist.ac.kr [Advanced Medical Device Research Center, Korea Electrotechnology Research Institute, Ansan (Korea, Republic of); Jeon, Seongchae [Advanced Medical Device Research Center, Korea Electrotechnology Research Institute, Ansan (Korea, Republic of); Seo, Chang-Woo [Department of Radiological Science, Yonsei University, Gangwon-do 220-710 (Korea, Republic of)

    2016-09-21

    This paper presents a wafer-scale complementary metal-oxide semiconductor (CMOS)-based X-ray flat panel detector for medical imaging and nondestructive testing applications. In this study, our proposed X-ray CMOS flat panel imager has been fabricated by using a 0.35 µm 1-poly/4-metal CMOS process. The pixel size is 100 µm×100 µm and the pixel array format is 1200×1200 pixels, which provide a field-of-view (FOV) of 120mm×120 mm. The 14.3-bit extended counting analog-to digital converter (ADC) with built-in binning mode was used to reduce the area and simultaneously improve the image resolution. The different screens such as thallium-doped CsI (CsI:Tl) and terbium gadolinium oxysulfide (Gd{sub 2}O{sub 2}S:Tb) scintillators were used as conversion materials for X-rays to visible light photons. The X-ray imaging performance such as X-ray sensitivity as a function of X-ray exposure dose, spatial resolution, image lag and X-ray images of various objects were measured under practical medical and industrial application conditions. This paper results demonstrate that our prototype CMOS-based X-ray flat panel imager has the significant potential for medical imaging and non-destructive testing (NDT) applications with high-resolution and high speed rate.

  19. X-ray performance of a wafer-scale CMOS flat panel imager for applications in medical imaging and nondestructive testing

    Science.gov (United States)

    Cha, Bo Kyung; Jeon, Seongchae; Seo, Chang-Woo

    2016-09-01

    This paper presents a wafer-scale complementary metal-oxide semiconductor (CMOS)-based X-ray flat panel detector for medical imaging and nondestructive testing applications. In this study, our proposed X-ray CMOS flat panel imager has been fabricated by using a 0.35 μm 1-poly/4-metal CMOS process. The pixel size is 100 μm×100 μm and the pixel array format is 1200×1200 pixels, which provide a field-of-view (FOV) of 120mm×120 mm. The 14.3-bit extended counting analog-to digital converter (ADC) with built-in binning mode was used to reduce the area and simultaneously improve the image resolution. The different screens such as thallium-doped CsI (CsI:Tl) and terbium gadolinium oxysulfide (Gd2O2S:Tb) scintillators were used as conversion materials for X-rays to visible light photons. The X-ray imaging performance such as X-ray sensitivity as a function of X-ray exposure dose, spatial resolution, image lag and X-ray images of various objects were measured under practical medical and industrial application conditions. This paper results demonstrate that our prototype CMOS-based X-ray flat panel imager has the significant potential for medical imaging and non-destructive testing (NDT) applications with high-resolution and high speed rate.

  20. Low-power-consumption flat-panel light-emitting device driven by field-emission electron source using high-crystallinity single-walled carbon nanotubes

    Science.gov (United States)

    Shimoi, Norihiro; Abe, Daisuke; Matsumoto, Kazuyuki; Sato, Yoshinori; Tohji, Kazuyuki

    2017-06-01

    Thin electrode films assembled through a wet process using single-walled carbon nanotubes (SWCNTs) are expected to play a role in reducing power consumption and saving energy in field-emission electron sources. The flat-panel light-emitting device for this study featured a line-sequential-scanning-type electrode structure equipped with electrodes for on-and-off controls of electron emissions, on which high-crystallinity SWCNTs were uniformly distributed. The device successfully emitted electrons on the flat panel in a stable manner. A technology for amplifying the luminance output by controlling the persistence characteristics of a fluorescent screen was also successfully developed. By combining such elemental technologies, a flat-panel light-emission device, as a stand-alone planar lighting device, which achieves a high-luminance efficiency of 87 lm/W and energy-conserved driving, was assembled for the first time in the world. The creation of field-emission electron sources driven with ultralow power consumption, along with applications that utilize such devices, is expected in the future.

  1. Research and development of photovoltaic power system. Study on structural defects in silicon-based amorphous materials; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon kei zairyo no kozo kekkan ni kansuru kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu, T. [Kanazawa University, Ishikawa (Japan). Faculty of Engineering

    1994-12-01

    Described herein are the results of the FY1994 research program for structural defects of silicon-based amorphous materials for solar cells. The study on light generation defects of the a-Si:H system and rejuvenation process by annealing establishes the effects of light irradiation time on changed neutral dangling bond density as a result of light irradiation at varying temperature of 77K, room temperature and 393K. The study on annealing to rejuvenate light generation defects of various types of a-Si-H systems establishes the activation energy distribution with respect to annealing to remove light-induced defects, showing that hydrogen affects the distribution of light-induced defects. The study on decaying process of light-induced ESR for undoped and N-doped a-Si:H systems observes the decaying process of light-induced ESR, after light is cut off, extending for a period of several seconds to several hours at 77K for the a-Si-H systems containing N in a range from 0 to 12at%. The other results presented are space distribution of neutral defects of light-irradiated a-Si-H systems, and rejuvenation process of light-induced spin for the a-Si(1-x)N(x):H composition. 6 figs.

  2. Determination of density of band-gap states of hydrogenated amorphous silicon suboxide thin films

    International Nuclear Information System (INIS)

    Bacioglu, A.

    2005-01-01

    Variation of density of gap states of PECVD silicon suboxide films with different oxygen concentrations was evaluated through electrical and optical measurements. Optical transmission and constant photocurrent method (CPM) were used to determine absorption coefficient as a function of photon energy. From these measurements the localized density of states between the valance band mobility edge and Fermi level has been determined. To determine the variation of conduction band edge, steady state photoconductivity (SSPC), photoconductivity response time (PCRT) and transient photoconductivity (TPC) measurements were utilized. Results indicate that the conduction and valance band edges, both, widen monotonically with oxygen content

  3. Comparison of photocurrent spectra measured by FTPS and CPM for amorphous silicon layers and solar cells

    Czech Academy of Sciences Publication Activity Database

    Holovský, Jakub; Poruba, Aleš; Purkrt, Adam; Remeš, Zdeněk; Vaněček, Milan

    2008-01-01

    Roč. 354, 19-25 (2008), s. 2167-2170 ISSN 0022-3093 R&D Projects: GA MŽP(CZ) SN/3/172/05 EU Projects: European Commission(XE) 19670 - ATHLET; European Commission(XE) 38885 - SE-POWERFOIL; European Commission(XE) 509178 - LPAMS Institutional research plan: CEZ:AV0Z10100521 Keywords : silicon * solar cells * band structure * defects * optical properties * absorption * FTIR measurements * photoconductivity * medium-range order Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.449, year: 2008

  4. Microstructure of amorphous-silicon-based solar cell materials by small-angle x-ray scattering. Annual subcontract report, 6 April 1994--5 April 1995

    Energy Technology Data Exchange (ETDEWEB)

    Williamson, D.L. [Colorado School of Mines, Golden, CO (United States)

    1995-08-01

    The general objective of this research is to provide detailed microstructural information on the amorphous-silicon-based, thin-film materials under development for improved multijunction solar cells. The experimental technique used is small-angle x-ray scattering (SAXS) providing microstructural data on microvoid fractions, sizes, shapes, and their preferred orientations. Other microstructural features such as alloy segregation, hydrogen-rich clusters and alloy short-range order are probed.

  5. Signal amplification and leakage current suppression in amorphous silicon p-i-n diodes by field profile tailoring

    International Nuclear Information System (INIS)

    Hong, W.S.; Zhong, F.; Mireshghi, A.; Perez-Mendez, V.

    1999-01-01

    The performance of amorphous silicon p-i-n diodes as radiation detectors in terms of signal amplitude can be greatly improved when there is a built-in signal gain mechanism. The authors describe an avalanche gain mechanism which is achieved by introducing stacked intrinsic, p-type, and n-type layers into the diode structure. They replaced the intrinsic layer of the conventional p-i-n diode with i 1 -p-i 2 -n-i 3 multilayers. The i 2 layer (typically 1 ∼ 3 microm) achieves an electric field > 10 6 V/cm, while maintaining the p-i interfaces to the metallic contact at electric fields 4 V/cm, when the diode is fully depleted. For use in photo-diode applications the whole structure is less than 10 microm thick. Avalanche gains of 10 ∼ 50 can be obtained when the diode is biased to ∼ 500 V. Also, dividing the electrodes to strips of 2 microm width and 20 microm pitch reduced the leakage current up to an order of magnitude, and increased light transmission without creating inactive regions

  6. Hydrogen in hydrogenated amorphous silicon thick film and its relation to the photoresponse of the film in contact with molybdenum

    International Nuclear Information System (INIS)

    Sridhar, N.; Chung, D.D.L.

    1992-01-01

    This paper reports that hydrogenated amorphous silicon films of thickness 0.5-7 μm on molybdenum substrates were deposited from silane by dc glow discharge and studied by mass spectrometric observation of the evolution of hydrogen upon heating and correlating this information with the photoresponse. The films were found to contain two types of hydrogen, namely weak bonded hydrogen, which evolved at 365 degrees C and was the minority, and strongly bonded hydrogen, which evolved at 460-670 degrees C and was the majority. The proportion of strongly bonded hydrogen increased with increasing film thickness and with increasing substrate temperature during deposition. The total amount of hydrogen increased when the substrate temperature was decreased from 350 to 275 degrees C. The strongly bonded hydrogen resided throughout the thickness of the film, whereas the weakly bonded hydrogen resided near the film surface. The evolution of the strongly bonded hydrogen was diffusion controlled, with an activation energy of 1.6 eV. The strongly bonded hydrogen enhanced the photoresponse, whereas the weakly bonded hydrogen degraded the photoresponse

  7. Scattering matrix analysis for evaluating the photocurrent in hydrogenated-amorphous-silicon-based thin film solar cells.

    Science.gov (United States)

    Shin, Myunghun; Lee, Seong Hyun; Lim, Jung Wook; Yun, Sun Jin

    2014-11-01

    A scattering matrix (S-matrix) analysis method was developed for evaluating hydrogenated amorphous silicon (a-Si:H)-based thin film solar cells. In this approach, light wave vectors A and B represent the incoming and outgoing behaviors of the incident solar light, respectively, in terms of coherent wave and incoherent intensity components. The S-matrix determines the relation between A and B according to optical effects such as reflection and transmission, as described by the Fresnel equations, scattering at the boundary surfaces, or scattering within the propagation medium, as described by the Beer-Lambert law and the change in the phase of the propagating light wave. This matrix can be used to evaluate the behavior of angle-incident coherent and incoherent light simultaneously, and takes into account not only the light scattering process at material boundaries (haze effects) but also nonlinear optical processes within the material. The optical parameters in the S-matrix were determined by modeling both a 2%-gallium-doped zinc oxide transparent conducting oxide and germanium-compounded a-Si:H (a-SiGe:H). Using the S-matrix equations, the photocurrent for an a-Si:H/a-SiGe:H tandem cell and the optical loss in semitransparent a-Si:H solar cells for use in building-integrated photovoltaic applications were analyzed. The developed S-matrix method can also be used as a general analysis tool for various thin film solar cells.

  8. Enhancement of hydrogenated amorphous silicon solar cells with front-surface hexagonal plasmonic arrays from nanoscale lithography

    Science.gov (United States)

    Zhang, Chenlong; Gwamuri, Jephias; Cvetanovic, Sandra; Sadatgol, Mehdi; Guney, Durdu O.; Pearce, Joshua M.

    2017-07-01

    The study first uses numerical simulations of hexagonal triangle and sphere arrays to optimize the performance of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices. The simulations indicated the potential for a sphere array to provide optical enhancement (OE) up to 7.4% compared to a standard cell using a nanosphere radius of 250 nm and silver film thickness of 50 nm. Next a detailed series of a-Si:H cells were fabricated and tested for quantum efficiency and characteristic and current-voltage (I-V) profiles using a solar simulator. Triangle and sphere array based cells, as well as the uncoated reference cells are analyzed and the results find that the simulation does not precisely predict the observed enhancement, but it forecasts a trend and can be used to guide fabrication. In general, the measured OE follows the simulated trend: (1) for triangular arrays no enhancement is observed and as the silver thickness increases the more degradation of the cell; (2) for annealed arrays both measured and simulated OE occur with the thinner silver thickness. Measured efficiency enhancement reached 20.2% and 10.9% for nanosphere diameter D = 500 nm, silver thicknesses h = 50 nm and 25 nm, respectively. These values, which surpass simulation results, indicate that this method is worth additional investigation.

  9. Scattering effect of the high-index dielectric nanospheres for high performance hydrogenated amorphous silicon thin-film solar cells.

    Science.gov (United States)

    Yang, Zhenhai; Gao, Pingqi; Zhang, Cheng; Li, Xiaofeng; Ye, Jichun

    2016-07-26

    Dielectric nanosphere arrays are considered as promising light-trapping designs with the capability of transforming the freely propagated sunlight into guided modes. This kinds of designs are especially beneficial to the ultrathin hydrogenated amorphous silicon (a-Si:H) solar cells due to the advantages of using lossless material and easily scalable assembly. In this paper, we demonstrate numerically that the front-sided integration of high-index subwavelength titanium dioxide (TiO2) nanosphere arrays can significantly enhance the light absorption in 100 nm-thick a-Si:H thin films and thus the power conversion efficiencies (PCEs) of related solar cells. The main reason behind is firmly attributed to the strong scattering effect excited by TiO2 nanospheres in the whole waveband, which contributes to coupling the light into a-Si:H layer via two typical ways: 1) in the short-waveband, the forward scattering of TiO2 nanospheres excite the Mie resonance, which focuses the light into the surface of the a-Si:H layer and thus provides a leaky channel; 2) in the long-waveband, the transverse waveguided modes caused by powerful scattering effectively couple the light into almost the whole active layer. Moreover, the finite-element simulations demonstrate that photocurrent density (Jph) can be up to 15.01 mA/cm(2), which is 48.76% higher than that of flat system.

  10. Dual-Layer Nanostructured Flexible Thin-Film Amorphous Silicon Solar Cells with Enhanced Light Harvesting and Photoelectric Conversion Efficiency.

    Science.gov (United States)

    Lin, Yinyue; Xu, Zhen; Yu, Dongliang; Lu, Linfeng; Yin, Min; Tavakoli, Mohammad Mahdi; Chen, Xiaoyuan; Hao, Yuying; Fan, Zhiyong; Cui, Yanxia; Li, Dongdong

    2016-05-04

    Three-dimensional (3-D) structures have triggered tremendous interest for thin-film solar cells since they can dramatically reduce the material usage and incident light reflection. However, the high aspect ratio feature of some 3-D structures leads to deterioration of internal electric field and carrier collection capability, which reduces device power conversion efficiency (PCE). Here, we report high performance flexible thin-film amorphous silicon solar cells with a unique and effective light trapping scheme. In this device structure, a polymer nanopillar membrane is attached on top of a device, which benefits broadband and omnidirectional performances, and a 3-D nanostructure with shallow dent arrays underneath serves as a back reflector on flexible titanium (Ti) foil resulting in an increased optical path length by exciting hybrid optical modes. The efficient light management results in 42.7% and 41.7% remarkable improvements of short-circuit current density and overall efficiency, respectively. Meanwhile, an excellent flexibility has been achieved as PCE remains 97.6% of the initial efficiency even after 10 000 bending cycles. This unique device structure can also be duplicated for other flexible photovoltaic devices based on different active materials such as CdTe, Cu(In,Ga)Se2 (CIGS), organohalide lead perovskites, and so forth.

  11. Surface morphology and grain analysis of successively industrially grown amorphous hydrogenated carbon films (a-C:H) on silicon

    Science.gov (United States)

    Catena, Alberto; McJunkin, Thomas; Agnello, Simonpietro; Gelardi, Franco M.; Wehner, Stefan; Fischer, Christian B.

    2015-08-01

    Silicon (1 0 0) has been gradually covered by amorphous hydrogenated carbon (a-C:H) films via an industrial process. Two types of these diamond-like carbon (DLC) coatings, one more flexible (f-DLC) and one more robust (r-DLC), have been investigated. Both types have been grown by a radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique with acetylene plasma. Surface morphologies have been studied in detail by atomic force microscopy (AFM) and Raman spectroscopy has been used to investigate the DLC structure. Both types appeared to have very similar morphology and sp2 carbon arrangement. The average height and area for single grains have been analyzed for all depositions. A random distribution of grain heights was found for both types. The individual grain structures between the f- and r-type revealed differences: the shape for the f-DLC grains is steeper than for the r-DLC grains. By correlating the average grain heights to the average grain areas for all depositions a limited region is identified, suggesting a certain regularity during the DLC deposition mechanisms that confines both values. A growth of the sp2 carbon entities for high r-DLC depositions is revealed and connected to a structural rearrangement of carbon atom hybridizations and hydrogen content in the DLC structure.

  12. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reyes, R [Facultad de Ingenieria Quimica y Textil, Universidad Nacional de Ingenieria, Av. Tupac Amaru SN, Lima (Peru); Cremona, M [Departamento de Fisica, PontifIcia Universidade Catolica de Rio de Janeiro, PUC-Rio, Cx. Postal 38071, Rio de Janeiro, RJ, CEP 22453-970 (Brazil); Achete, C A, E-mail: rreyes@uni.edu.pe [Departamento de Engenheria Metalurgica e de Materiais, Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro, RJ, CEP 21945-970 (Brazil)

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq{sub 3}) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq{sub 3}/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  13. Simultaneous optical and electrical modeling of plasmonic light trapping in thin-film amorphous silicon photovoltaic devices

    Science.gov (United States)

    Gandhi, Keyur K.; Nejim, Ahmed; Beliatis, Michail J.; Mills, Christopher A.; Henley, Simon J.; Silva, S. Ravi P.

    2015-01-01

    Rapid prototyping of photovoltaic (PV) cells requires a method for the simultaneous simulation of the optical and electrical characteristics of the device. The development of nanomaterial-enabled PV cells only increases the complexity of such simulations. Here, we use a commercial technology computer aided design (TCAD) software, Silvaco Atlas, to design and model plasmonic gold nanoparticles integrated in optoelectronic device models of thin-film amorphous silicon (a-Si:H) PV cells. Upon illumination with incident light, we simulate the optical and electrical properties of the cell simultaneously and use the simulation to produce current-voltage (J-V) and external quantum efficiency plots. Light trapping due to light scattering and localized surface plasmon resonance interactions by the nanoparticles has resulted in the enhancement of both the optical and electrical properties due to the reduction in the recombination rates in the photoactive layer. We show that the device performance of the modeled plasmonic a-Si:H PV cells depends significantly on the position and size of the gold nanoparticles, which leads to improvements either in optical properties only, or in both optical and electrical properties. The model provides a route to optimize the device architecture by simultaneously optimizing the optical and electrical characteristics, which leads to a detailed understanding of plasmonic PV cells from a design perspective and offers an advanced tool for rapid device prototyping.

  14. Conformational study of protein interactions with hydrogen-passivated amorphous silicon surfaces: Effect of pH

    Science.gov (United States)

    Brahmi, Yamina; Filali, Larbi; Sib, Jamal Dine; Bouhekka, Ahmed; Benlakehal, Djamel; Bouizem, Yahya; Kebab, Aissa; Chahed, Larbi

    2017-11-01

    The adsorption of Bovine Serum Albumin (BSA) proteins on amorphous silicon (a-Si) surfaces was studied with respect to solution pH. Thin films of a-Si were deposited using radio-frequency magnetron sputtering at room temperature and then treated in a hydrogen ambient to form a hydrogenated a-Si surface layer (a-Si:H). The interactions of the as-deposited and hydrogenated surfaces with the proteins at neutral, acidic, and basic environments was probed by means of Fourier transform infrared attenuated total reflection (FTIR-ATR) spectroscopy, Spectroscopic Ellipsometry (SE), and Atomic Force Microscopy (AFM), to study the influence of the charge of proteins on their adsorption and conformation on the a-Si:H surface, compared with the a-Si surface. The results show that the charge of the proteins has a significant effect on their interactions with these two substrates but in dissimilar ways. For the as-deposited substrate, these interactions are predictably coulombic since the surface is charged. For the hydrogenated substrate, the adsorption of the proteins depends on their conformation which is heavily affected by pH, and the size of their footprint (adsorption mode) on the surface.

  15. Development of a very fast spectral response measurement system for analysis of hydrogenated amorphous silicon solar cells and modules

    International Nuclear Information System (INIS)

    Rodríguez, J.A.; Fortes, M.; Alberte, C.; Vetter, M.; Andreu, J.

    2013-01-01

    Highlights: ► Spectral response equipment for measuring a-Si:H solar cells in a few seconds. ► Equipment based on 16 LEDs with simultaneous illumination of the solar cell. ► The current generated by each LED is analyzed by a Fast Fourier Transform. ► Cheap equipment without lock-in technology for the current measurement. ► Measurement error vs. conventional measurement less than 1% in J sc . - Abstract: An important requirement for a very fast spectral response measurement system is the simultaneous illumination of the solar cell at multiple well defined wavelengths. Nowadays this can be done by means of light emitting diodes (LEDs) available for a multitude of wavelengths. For the purpose to measure the spectral response (SR) of amorphous silicon solar cells a detailed characterization of LEDs emitting in the wavelength range from 300 nm to 800 nm was performed. In the here developed equipment the LED illumination is modulated in the frequency range from 100 Hz to 200 Hz and the current generated by each LED is analyzed by a Fast Fourier Transform (FFT) to determine the current component corresponding to each wavelength. The equipment provides a signal to noise ratio of 2–4 orders of magnitude for individual wavelengths resulting in a precise measurement of the SR over the whole wavelength range. The difference of the short circuit current determined from the SR is less than 1% in comparison to a conventional system with monochromator.

  16. Microporosity and CO₂ Capture Properties of Amorphous Silicon Oxynitride Derived from Novel Polyalkoxysilsesquiazanes.

    Science.gov (United States)

    Iwase, Yoshiaki; Horie, Yoji; Honda, Sawao; Daiko, Yusuke; Iwamoto, Yuji

    2018-03-13

    Polyalkoxysilsesquiazanes ([ROSi(NH) 1.5 ] n , ROSZ, R = Et, nPr, iPr, nBu, sBu, nHex, sHex, cHex, decahydronaphthyl (DHNp)) were synthesized by ammonolysis at -78 °C of alkoxytrichlorosilane (ROSiCl₃), which was isolated by distillation as a reaction product of SiCl₄ and ROH. The simultaneous thermogravimetric and mass spectrometry analyses of the ROSZs under helium revealed a common decomposition reaction, the cleavage of the oxygen-carbon bond of the RO group to evolve alkene as a main gaseous species formed in-situ, leading to the formation of microporous amorphous Si-O-N at 550 °C to 800 °C. The microporosity in terms of the peak of the pore size distribution curve located within the micropore size range (derived from DHNpOSZ having an SSA of 750 m²·g -1 . The CO₂ capture properties were further discussed based on their temperature dependency, and a surface functional group of the Si-O-N formed in-situ during the polymer/ceramics thermal conversion.

  17. Characterization and simulation on antireflective coating of amorphous silicon oxide thin films with gradient refractive index

    Science.gov (United States)

    Huang, Lu; Jin, Qi; Qu, Xingling; Jin, Jing; Jiang, Chaochao; Yang, Weiguang; Wang, Linjun; Shi, Weimin

    2016-08-01

    The optical reflective properties of silicon oxide (SixOy) thin films with gradient refractive index are studied both theoretically and experimentally. The thin films are widely used in photovoltaic as antireflective coatings (ARCs). An effective finite difference time domain (FDTD) model is built to find the optimized reflection spectra corresponding to structure of SixOy ARCs with gradient refractive index. Based on the simulation analysis, it shows the variation of reflection spectra with gradient refractive index distribution. The gradient refractive index of SixOy ARCs can be obtained in adjustment of SiH4 to N2O ratio by plasma-enhanced chemical vapor deposition (PECVD) system. The optimized reflection spectra measured by UV-visible spectroscopy confirms to agree well with that simulated by FDTD method.

  18. Thick amorphous silicon layers suitable for the realization of radiation detectors

    International Nuclear Information System (INIS)

    Hong, Wan-Shick; Drewery, J.S.; Jing, Tao; Lee, Hyong-Koo; Perez-Mendez, V.; Petrova-Koch, V.

    1995-04-01

    Thick silicon films with good electronic quality have been prepared by glow discharge of He-diluted SiH 4 at a substrate temperature ∼ 150 degree C and subsequent annealing at 160 degree C for about 100 hours. The stress in the films obtained this way decreased to ∼ 100 MPa compared to the 350 MPa in conventional a-Si:H. The post-annealing helped to reduce the ionized dangling bond density from 2.5 x 10 15 cm -3 to 7 x 10 14 cm -3 without changing the internal stress. IR spectroscopy and hydrogen effusion measurements implied the existence of microvoids and tiny crystallites in the material showing satisfactory electronic properties. P-I-N diodes for radiation detection applications have been realized out of the new material

  19. Hybrid Si nanowire/amorphous silicon FETs for large-area image sensor arrays.

    Science.gov (United States)

    Wong, William S; Raychaudhuri, Sourobh; Lujan, René; Sambandan, Sanjiv; Street, Robert A

    2011-06-08

    Silicon nanowire (SiNW) field-effect transistors (FETs) were fabricated from nanowire mats mechanically transferred from a donor growth wafer. Top- and bottom-gate FET structures were fabricated using a doped a-Si:H thin film as the source/drain (s/d) contact. With a graded doping profile for the a-Si:H s/d contacts, the off-current for the hybrid nanowire/thin-film devices was found to decrease by 3 orders of magnitude. Devices with the graded contacts had on/off ratios of ∼10(5), field-effect mobility of ∼50 cm(2)/(V s), and subthreshold swing of 2.5 V/decade. A 2 in. diagonal 160 × 180 pixel image sensor array was fabricated by integrating the SiNW backplane with an a-Si:H p-i-n photodiode.

  20. Application of flat panel digital imaging for improvement of ocular melanoma patient set-up in proton beam therapy

    Science.gov (United States)

    Daftari, Inder K.; Essert, Timothy; Phillips, Theodore L.

    2009-01-01

    In order to reduce the dose to surrounding critical tissues and also minimize the probability of recurrence of the tumor the placement of radiation fields relative to patient anatomy is very essential in proton beam therapy of ocular tumors. To achieve this objective, patient setup and field placement have been verified before treatment by analyzing the portal images obtained with Polaroid film-camera system. The Polaroid films are becoming expensive and obsolete, making new methods of verifying the patient treatment position essential. The objective of this study was to implement an orthogonal flat panel digital imaging (FPDI) system as a tool to image-guided radiation therapy (IGRT) on the UC Davis cyclotron proton beam therapy line and to use the system for patient setup verification. The image quality of the system is sufficient to see an air hole with a diameter of 0.5 mm at a depth of 9 mm, in a 10 cm Lucite phantom. The subject contrast of the FPDI system varied from 16% to 29% by varying the size of the air hole in the phantom from 1 to 5 mm and changing the depth from 9 to 15 mm. The subject contrast for 0.5 mm air hole was 11%. The comparison of the setup variations as measured from Polaroid port films and FPDI was 0.1±0.7 mm in the X-direction, 0.2±0.2 mm in the Y-direction and 0.04±0.1 mm in Z-direction, respectively. The day-to-day positional variations in-patient set-ups were studied for 30 patients using the FPDI system. The patient position set-up on first day of treatment [defined by the X, Y, Z coordinates of the chair and head holder] was registered as the reference image. The comparison of day-to-day patient position with reference image indicated net translation along the three orthogonal axes as 0.3±1.88 mm in right-left direction, -0.3±1.78 in superior-inferior direction and -0.6±2.8 mm in anterior-posterior direction. The image quality of the FPDI system was sufficient to clearly reveal the radio-opaque markers on the digital image. In

  1. Reduction of ring artifacts in CBCT: Detection and correction of pixel gain variations in flat panel detectors

    International Nuclear Information System (INIS)

    Altunbas, Cem; Lai, Chao-Jen; Zhong, Yuncheng; Shaw, Chris C.

    2014-01-01

    Purpose: In using flat panel detectors (FPD) for cone beam computed tomography (CBCT), pixel gain variations may lead to structured nonuniformities in projections and ring artifacts in CBCT images. Such gain variations can be caused by change in detector entrance exposure levels or beam hardening, and they are not accounted by conventional flat field correction methods. In this work, the authors presented a method to identify isolated pixel clusters that exhibit gain variations and proposed a pixel gain correction (PGC) method to suppress both beam hardening and exposure level dependent gain variations. Methods: To modulate both beam spectrum and entrance exposure, flood field FPD projections were acquired using beam filters with varying thicknesses. “Ideal” pixel values were estimated by performing polynomial fits in both raw and flat field corrected projections. Residuals were calculated by taking the difference between measured and ideal pixel values to identify clustered image and FPD artifacts in flat field corrected and raw images, respectively. To correct clustered image artifacts, the ratio of ideal to measured pixel values in filtered images were utilized as pixel-specific gain correction factors, referred as PGC method, and they were tabulated as a function of pixel value in a look-up table. Results: 0.035% of detector pixels lead to clustered image artifacts in flat field corrected projections, where 80% of these pixels were traced back and linked to artifacts in the FPD. The performance of PGC method was tested in variety of imaging conditions and phantoms. The PGC method reduced clustered image artifacts and fixed pattern noise in projections, and ring artifacts in CBCT images. Conclusions: Clustered projection image artifacts that lead to ring artifacts in CBCT can be better identified with our artifact detection approach. When compared to the conventional flat field correction method, the proposed PGC method enables characterization of nonlinear

  2. Determination of vertebral and femoral trabecular morphology and stiffness using a flat-panel C-arm-based CT approach.

    Science.gov (United States)

    Mulder, Lars; van Rietbergen, Bert; Noordhoek, Niels J; Ito, Keita

    2012-01-01

    The importance of assessing trabecular architecture together with bone mineral density to determine bone stiffness and fracture risk in osteoporosis has been well established. However, no imaging modalities are available to assess trabecular architecture at clinically relevant sites in the axial skeleton. Recently developed flat-panel CT devices, however, offer resolutions that are potentially good enough to resolve bone architecture at these sites. The goal of the present study was to investigate how accurate trabecular architecture and stiffness can be determined based on images from such a device (XperCT, Philips Healthcare). Ten cadaver human C3 vertebrae, twelve T12 vertebrae and 12 proximal femora were scanned with XperCT while mimicking in-vivo scanning conditions and compared to scans of the same bones with microCT. Standard segmentation and morphology quantification algorithms were applied as well as finite element (FE) simulation based on segmented and gray value images. Results showed that mean trabecular separation (Tb.Sp) and number (Tb.N) can be accurately determined at all sites. The accuracy of other parameters, however, depended on the site. For T12 no other structural parameters could be accurately quantified and no FE-results could be obtained from segmented images. When using gray-level images, however, accurate determination of cancellous bone stiffness was possible. For the C3 vertebrae and proximal femora, mean bone volume fraction (BV/TV), Tb.Sp, Tb.N, and anisotropy (C3 only) could be determined accurately. For Tb.Th, structure model index (SMI, femur only), and anisotropy good correlations were obtained but the values were not determined accurately. FE simulations based on segmented images were accurate for the C3 vertebrae, but severely underestimated bone stiffness for the femur. Here also, this was improved by using the gray value models. In conclusion, XperCT does provide a resolution that is good enough to determine trabecular

  3. Low-Loss, Low-Noise, Crystalline and Amorphous Silicon Dielectrics for Superconducting Microstriplines and Kinetic Inductance Detector Capacitors

    Science.gov (United States)

    Golwala, Sunil

    entertained; For superconducting spectrometers, lower loss would improve the spectral resolution limit, Rmax = (1/tan delta), from 1e3 to 2e5, sufficient for resolved extragalactic mm/submm spectroscopy, where intrinsic line widths are dnu/nu 1e-4 to 1e-3; For KIDs, the interdigitated capacitors (IDC) currently used could be replaced by parallel-plate capacitors 40 times smaller in area, presenting a number of advantages over IDCs in properties such as focal plane fill factor and mounting architecture, direct absorption, and inter-KID coupling. There exist two paths in the literature to lower loss: hydrogenated amorphous silicon (aSi:H) and crystalline silicon (cSi). Crystalline silicon intrinsically has tan delta design/fabrication constraints, it has not been shown yet that this can be extended to more convenient 1 um and 2 um thicknesses. a-Si:H has been demonstrated to have tan delta FIR) direct detectors” and “Compact, Integrated Spectrometers for 100 to 1000 um” gaps.

  4. Electronic structure of the amorphous-crystalline Silicon heterostructure contact; Die elektronische Struktur des amorph-kristallinen Silizium-Heterostruktur-Kontakts

    Energy Technology Data Exchange (ETDEWEB)

    Korte, L.

    2006-07-01

    In the present work, the electronic density of states of hydrogenated amorphous silicon (a-Si:H) layers in the thickness range from 300 down to {proportional_to}2 nm was examined by Near-UV-photoelectron spectroscopy (NUV-PES). The measurements yield a mean density (averaged over all directions in k space) of the extended states in the valence band close to the band edge E{sub v}, down to approximately E{sub v}-1 eV, as well as the density of states in the band-gap between E{sub v} and the Fermi level E{sub f}. An analytic model for the density of states was fitted to the measured yield data. The model describes the extended states close to the band edge as well as the localized states in the band gap. The defect parameters obtained from the fits to the 300 nm sample are elevated with respect to literature data. In contrast to PES the photocurrent measurement yield the defect parameters averaged over the entire layer thickness. Finally, the photocurrent measurements can be evaluated in the Tauc plot to yield the optical band-gap, E{sub g}{sup opt}=1.76(5) eV. The methodology developed in the first part of the thesis (PES measurement and fit of the model density of states) was then applied to various series of approximately 10 nm thin a-Si:H layers on c-Si substrates, where the deposition temperature of the layers and the concentration of their doping both by phosphorus and boron were varied. The experimental results can be summarized as follows: Ultrathin a-Si:H layers show an optimum of the deposition-temperature around 230 C. The optimum is characterized by an Urbach energy of 66(1) meV and a defect-density of 2,9(3).10{sup 18} cm{sup -3}. For undoped layers, the Fermi level lies E{sub F}-E{sub V}{sup {mu}}=1.04(6) eV, the films are therefore slightly n-type. Conductivity measurements at identically prepared thick layers on glass allow to determine the distance of the Fermi level to the conduction band mobility edge, E{sub C}{sup {mu}}-E{sub F}. Both for the

  5. Carrier collection losses in interface passivated amorphous silicon thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Neumüller, A., E-mail: alex.neumueller@next-energy.de; Sergeev, O.; Vehse, M.; Agert, C. [NEXT ENERGY EWE Research Centre for Energy Technology at the University of Oldenburg, Carl-von-Ossietzky-Straße 15, 26129 Oldenburg (Germany); Bereznev, S.; Volobujeva, O. [Department of Materials Science, Tallinn University of Technology, Ehitajate Tee 5, Tallinn 19086 (Estonia); Ewert, M.; Falta, J. [Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen (Germany); MAPEX Center for Materials and Processes, University of Bremen, 28359 Bremen (Germany)

    2016-07-25

    In silicon thin-film solar cells the interface between the i- and p-layer is the most critical. In the case of back diffusion of photogenerated minority carriers to the i/p-interface, recombination occurs mainly on the defect states at the interface. To suppress this effect and to reduce recombination losses, hydrogen plasma treatment (HPT) is usually applied. As an alternative to using state of the art HPT we apply an argon plasma treatment (APT) before the p-layer deposition in n-i-p solar cells. To study the effect of APT, several investigations were applied to compare the results with HPT and no plasma treatment at the interface. Carrier collection losses in resulting solar cells were examined with spectral response measurements with and without bias voltage. To investigate single layers, surface photovoltage and X-ray photoelectron spectroscopy (XPS) measurements were conducted. The results with APT at the i/p-interface show a beneficial contribution to the carrier collection compared with HPT and no plasma treatment. Therefore, it can be concluded that APT reduces the recombination centers at the interface. Further, we demonstrate that carrier collection losses of thin-film solar cells are significantly lower with APT.

  6. Energy loss process analysis for radiation degradation and immediate recovery of amorphous silicon alloy solar cells

    Science.gov (United States)

    Sato, Shin-ichiro; Beernink, Kevin; Ohshima, Takeshi

    2015-06-01

    Performance degradation of a-Si/a-SiGe/a-SiGe triple-junction solar cells due to irradiation of silicon ions, electrons, and protons are investigated using an in-situ current-voltage measurement system. The performance recovery immediately after irradiation is also investigated. Significant recovery is always observed independent of radiation species and temperature. It is shown that the characteristic time, which is obtained by analyzing the short-circuit current annealing behavior, is an important parameter for practical applications in space. In addition, the radiation degradation mechanism is discussed by analyzing the energy loss process of incident particles (ionizing energy loss: IEL, and non-ionizing energy loss: NIEL) and their relative damage factors. It is determined that ionizing dose is the primarily parameter for electron degradation whereas displacement damage dose is the primarily parameter for proton degradation. This is because the ratio of NIEL to IEL in the case of electrons is small enough to be ignored the damage due to NIEL although the defect creation ratio of NIEL is much larger than that of IEL in the cases of both protons and electrons. The impact of “radiation quality effect” has to be considered to understand the degradation due to Si ion irradiation.

  7. Optical and vibrational properties of sulfur and selenium versus halogens in hydrogenated amorphous silicon matrix

    International Nuclear Information System (INIS)

    Al-Alawi, S.M.; Al-Dallal, S.

    1999-01-01

    The infrared spectra of a compositional variation series of alpha-Si,S:H; alpha-Si,Se:H, alpha-Si:Cl, H and alpha-Si:F,H thin films were deposited by r.f. glow discharge were compared. It was shown that S, Se, Cl and F can be bonded to the silicon matrix. The stretching mode bands at 2000 cm/sup -1/. and 2100 cm/sup -1/ in the infrared spectra of the above alloys shifts systematically to higher wave numbers when incorporated S,Se or halogen atoms are increases. This observation was attributed to the larger electronegativity of these atoms with respect to the host matrix. Optical transmission spectroscopy and photothermal deflection experiments reveal an increase in the band gap when the content of any of the above elements is increased. However, the highest band gap was obtained for sulfur alloys. This result was interpreted in terms of the S-Si bond strength as compared to other elements. It was found that alpha-Si, S:H was interpreted in terms of the S-Si alloys exhibit the highest structural stability among the four alloys for moderate amount of incorporated sulfur atoms. (author)

  8. Room temperature photoluminescence spectrum modeling of hydrogenated amorphous silicon carbide thin films by a joint density of tail states approach and its application to plasma deposited hydrogenated amorphous silicon carbide thin films

    International Nuclear Information System (INIS)

    Sel, Kıvanç; Güneş, İbrahim

    2012-01-01

    Room temperature photoluminescence (PL) spectrum of hydrogenated amorphous silicon carbide (a-SiC x :H) thin films was modeled by a joint density of tail states approach. In the frame of these analyses, the density of tail states was defined in terms of empirical Gaussian functions for conduction and valance bands. The PL spectrum was represented in terms of an integral of joint density of states functions and Fermi distribution function. The analyses were performed for various values of energy band gap, Fermi energy and disorder parameter, which is a parameter that represents the width of the energy band tails. Finally, the model was applied to the measured room temperature PL spectra of a-SiC x :H thin films deposited by plasma enhanced chemical vapor deposition system, with various carbon contents, which were determined by X-ray photoelectron spectroscopy measurements. The energy band gap and disorder parameters of the conduction and valance band tails were determined and compared with the optical energies and Urbach energies, obtained by UV–Visible transmittance measurements. As a result of the analyses, it was observed that the proposed model sufficiently represents the room temperature PL spectra of a-SiC x :H thin films. - Highlights: ► Photoluminescence spectra (PL) of the films were modeled. ► In the model, joint density of tail states and Fermi distribution function are used. ► Various values of energy band gap, Fermi energy and disorder parameter are applied. ► The model was applied to the measured PL of the films. ► The proposed model represented the room temperature PL spectrum of the films.

  9. Clinically useful dilution factors for iodine and gadolinium contrast material: an animal model of pediatric digital subtraction angiography using state-of-the-art flat-panel detectors.

    Science.gov (United States)

    Racadio, John M; Kashinkunti, Soumya R; Nachabe, Rami A; Racadio, Judy M; Johnson, Neil D; Kukreja, Kamlesh U; Patel, Manish N; Privitera, Mary Beth; Hales, Jasmine E; Abruzzo, Todd A

    2013-11-01

    Iodinated and gadolinium contrast agents pose some risk for certain pediatric patients, including allergic-like reactions, contrast-induced nephropathy (CIN) and nephrogenic systemic fibrosis (NSF). Digital flat-panel detectors enhance image quality during angiography and might allow use of more dilute contrast material to decrease risk of complications that might be dose-dependent, such as CIN and NSF. To assess the maximum dilution factors for iodine- and gadolinium-based contrast agents suitable for vascular imaging with fluoroscopy and digital subtraction angiography (DSA) on digital flat-panel detectors in an animal model. We performed selective catheterization of the abdominal aorta, renal artery and common carotid artery on a rabbit. In each vessel we performed fluoroscopy and DSA during contrast material injection using iodinated and gadolinium contrast material at 100%, 80%, 50%, 33% and 20% dilutions. An image quality score (0 to 3) was assigned by each of eight evaluators. Intracorrelation coefficient, paired t-test, one-way repeated analysis of variance, Spearman correlation and receiver operating characteristic curve analysis were applied to the data. Overall the image quality scores correlated linearly with dilution levels. For iodinated contrast material, the optimum cut-off level for DSA when a score of at least 2 is acceptable is above 33%; it is above 50% when a score of 3 is necessary. For gadolinium contrast material, the optimum cut-off for DSA images is above 50% when a score of at least 2 is acceptable and above 80% when a score of 3 is necessary. Knowledge of the relationship between image quality and contrast material dilution might allow a decrease in overall contrast load while maintaining appropriate image quality when using digital flat-panel detectors.

  10. High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yong [Iowa State Univ., Ames, IA (United States)

    2002-01-01

    Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H2, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are

  11. The effect of amorphous silicon surface hydrogenation on morphology, wettability and its implication on the adsorption of proteins

    International Nuclear Information System (INIS)

    Filali, Larbi; Brahmi, Yamina; Sib, Jamal Dine; Bouhekka, Ahmed; Benlakehal, Djamel; Bouizem, Yahya; Kebab, Aissa; Chahed, Larbi

    2016-01-01

    Highlights: • Hydrogenation of the surfaces had the effect of reducing the roughness by way of shadow etching. • Roughness was the driving factor affecting the wettability of the hydrogenated surfaces. • Bovine Serum Albumin proteins favored the surfaces with highest hydrogen content. • Surface modification induced secondary structure change of adsorbed proteins. - Abstract: We study the effect of amorphous silicon (a-Si) surface hydrogenation on Bovine Serum Albumin (BSA) adsorption. A set of (a-Si) films was prepared by radio frequency magnetron sputtering (RFMS) and after deposition; they were treated in molecular hydrogen ambient at different pressures (1–3 Pa). Fourier transform infrared attenuated total reflection (FTIR-ATR) spectroscopy and spectroscopic ellipsometry (SE) were used to study the hydrogenation effect and BSA adsorption. Atomic force microscopy (AFM) was used to evaluate morphological changes caused by hydrogenation. The wettability of the films was measured using contact angle measurement, and in the case of the hydrogenated surfaces, it was found to be driven by surface roughness. FTIR-ATR spectroscopy and SE measurements show that proteins had the strongest affinity toward the surfaces with the highest hydrogen content and their secondary structure was affected by a significant decrease of the α-helix component (-27%) compared with the proteins adsorbed on the un-treated surface, which had a predominantly α-helix (45%) structure. The adsorbed protein layer was found to be densely packed with a large thickness (30.9 nm) on the hydrogen-rich surfaces. The most important result is that the surface hydrogen content was the dominant factor, compared to wettability and morphology, for protein adsorption.

  12. The effect of amorphous silicon surface hydrogenation on morphology, wettability and its implication on the adsorption of proteins

    Energy Technology Data Exchange (ETDEWEB)

    Filali, Larbi, E-mail: larbifilali5@gmail.com [Laboratoire de Physique des Couches Minces et Matériaux pour l' Electronique, Université d' Oran 1, Ahmed Ben Bella, BP 1524, El M' naouar 31100 Oran (Algeria); Brahmi, Yamina; Sib, Jamal Dine [Laboratoire de Physique des Couches Minces et Matériaux pour l' Electronique, Université d' Oran 1, Ahmed Ben Bella, BP 1524, El M' naouar 31100 Oran (Algeria); Bouhekka, Ahmed [Laboratoire de Physique des Couches Minces et Matériaux pour l' Electronique, Université d' Oran 1, Ahmed Ben Bella, BP 1524, El M' naouar 31100 Oran (Algeria); Département de Physique, Université Hassiba Ben Bouali, 02000 Chlef (Algeria); Benlakehal, Djamel; Bouizem, Yahya; Kebab, Aissa; Chahed, Larbi [Laboratoire de Physique des Couches Minces et Matériaux pour l' Electronique, Université d' Oran 1, Ahmed Ben Bella, BP 1524, El M' naouar 31100 Oran (Algeria)

    2016-10-30

    Highlights: • Hydrogenation of the surfaces had the effect of reducing the roughness by way of shadow etching. • Roughness was the driving factor affecting the wettability of the hydrogenated surfaces. • Bovine Serum Albumin proteins favored the surfaces with highest hydrogen content. • Surface modification induced secondary structure change of adsorbed proteins. - Abstract: We study the effect of amorphous silicon (a-Si) surface hydrogenation on Bovine Serum Albumin (BSA) adsorption. A set of (a-Si) films was prepared by radio frequency magnetron sputtering (RFMS) and after deposition; they were treated in molecular hydrogen ambient at different pressures (1–3 Pa). Fourier transform infrared attenuated total reflection (FTIR-ATR) spectroscopy and spectroscopic ellipsometry (SE) were used to study the hydrogenation effect and BSA adsorption. Atomic force microscopy (AFM) was used to evaluate morphological changes caused by hydrogenation. The wettability of the films was measured using contact angle measurement, and in the case of the hydrogenated surfaces, it was found to be driven by surface roughness. FTIR-ATR spectroscopy and SE measurements show that proteins had the strongest affinity toward the surfaces with the highest hydrogen content and their secondary structure was affected by a significant decrease of the α-helix component (-27%) compared with the proteins adsorbed on the un-treated surface, which had a predominantly α-helix (45%) structure. The adsorbed protein layer was found to be densely packed with a large thickness (30.9 nm) on the hydrogen-rich surfaces. The most important result is that the surface hydrogen content was the dominant factor, compared to wettability and morphology, for protein adsorption.

  13. Development of a very fast spectral response measurement system for analysis of hydrogenated amorphous silicon solar cells and modules

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, J.A., E-mail: jose.rodriguez@tsolar.eu [Dept. Technology, Development and Innovation, T-Solar Global S.A., Parque Tecnologico de Galicia, Avda. de Vigo 5, E-32900 San Cibrao das Vinas (Ourense) (Spain); Fortes, M. [Departamento de Electronica e Computacion, Universidade de Santiago de Compostela, 15782 Santiago de Compostela (Spain); Alberte, C.; Vetter, M.; Andreu, J. [Dept. Technology, Development and Innovation, T-Solar Global S.A., Parque Tecnologico de Galicia, Avda. de Vigo 5, E-32900 San Cibrao das Vinas (Ourense) (Spain)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer Spectral response equipment for measuring a-Si:H solar cells in a few seconds. Black-Right-Pointing-Pointer Equipment based on 16 LEDs with simultaneous illumination of the solar cell. Black-Right-Pointing-Pointer The current generated by each LED is analyzed by a Fast Fourier Transform. Black-Right-Pointing-Pointer Cheap equipment without lock-in technology for the current measurement. Black-Right-Pointing-Pointer Measurement error vs. conventional measurement less than 1% in J{sub sc}. - Abstract: An important requirement for a very fast spectral response measurement system is the simultaneous illumination of the solar cell at multiple well defined wavelengths. Nowadays this can be done by means of light emitting diodes (LEDs) available for a multitude of wavelengths. For the purpose to measure the spectral response (SR) of amorphous silicon solar cells a detailed characterization of LEDs emitting in the wavelength range from 300 nm to 800 nm was performed. In the here developed equipment the LED illumination is modulated in the frequency range from 100 Hz to 200 Hz and the current generated by each LED is analyzed by a Fast Fourier Transform (FFT) to determine the current component corresponding to each wavelength. The equipment provides a signal to noise ratio of 2-4 orders of magnitude for individual wavelengths resulting in a precise measurement of the SR over the whole wavelength range. The difference of the short circuit current determined from the SR is less than 1% in comparison to a conventional system with monochromator.

  14. Improvement of memory window and retention with low trap density in hydrogenated-amorphous-silicon-germanium nonvolatile memory

    International Nuclear Information System (INIS)

    Choi, Woojin; Jang, Kyungsoo; Raja, Jayapal; Cho, Jaehyun; Nguyen, Hong Hanh; Kim, Jiwoong; Lee, YounJung; Nagarajan, Balaji; Yi, Junsin; Kim, Minbum

    2013-01-01

    We report the SiO 2 /SiO X /SiO X N Y (OO X O N ) stacked nonvolatile memory (NVM) using hydrogenated amorphous silicon germanium (a-Si X Ge 1–X :H) as an active channel layer. In NVMs, the reduction of interface trap density is one of the key issues to improve device performance including memory window and retention. The NVMs using a-SiGe:H as the active channel overcame the limitation of small memory window size and poor retention characteristics by controlling the interface trap density using different Ge contents in the surface SiGe layer. For a-Si:H NVM that does not contain Ge, the memory size is about 5.15 V, which is quite large, with a programming voltage of −7 V and an erasing voltage of +15 V. However, the retention time of over 10 years is almost impossible. For a-SiGe:H NVM with 20% Ge, the memory size is as large as 7.38 V and the retention data of ∼58% is possible even after 10 years due to the reduced trap density in OO X O N and channel layers. When the Ge content is more than 20%, the memory size and retention property after 10 years decrease rapidly. When the contents of Ge in SiGe films reach a certain point, they act as defects lowering the properties. The results of NVM devices using a-SiGe:H (Ge 20%) as an active channel layer demonstrate that they have switching characteristics suitable for data storage such as a threshold voltage window. (paper)

  15. Dual-energy cone-beam CT with a flat-panel detector: Effect of reconstruction algorithm on material classification

    Energy Technology Data Exchange (ETDEWEB)

    Zbijewski, W., E-mail: wzbijewski@jhu.edu; Gang, G. J.; Xu, J.; Wang, A. S.; Stayman, J. W. [Department of Biomedical Engineering, Johns Hopkins University, Baltimore, Maryland 21205 (United States); Taguchi, K.; Carrino, J. A. [Russell H. Morgan Department of Radiology, Johns Hopkins University, Baltimore, Maryland 21205 (United States); Siewerdsen, J. H. [Department of Biomedical Engineering, Johns Hopkins University, Baltimore, Maryland 21205 and Russell H. Morgan Department of Radiology, Johns Hopkins University, Baltimore, Maryland 21205 (United States)

    2014-02-15

    Purpose: Cone-beam CT (CBCT) with a flat-panel detector (FPD) is finding application in areas such as breast and musculoskeletal imaging, where dual-energy (DE) capabilities offer potential benefit. The authors investigate the accuracy of material classification in DE CBCT using filtered backprojection (FBP) and penalized likelihood (PL) reconstruction and optimize contrast-enhanced DE CBCT of the joints as a function of dose, material concentration, and detail size. Methods: Phantoms consisting of a 15 cm diameter water cylinder with solid calcium inserts (50–200 mg/ml, 3–28.4 mm diameter) and solid iodine inserts (2–10 mg/ml, 3–28.4 mm diameter), as well as a cadaveric knee with intra-articular injection of iodine were imaged on a CBCT bench with a Varian 4343 FPD. The low energy (LE) beam was 70 kVp (+0.2 mm Cu), and the high energy (HE) beam was 120 kVp (+0.2 mm Cu, +0.5 mm Ag). Total dose (LE+HE) was varied from 3.1 to 15.6 mGy with equal dose allocation. Image-based DE classification involved a nearest distance classifier in the space of LE versus HE attenuation values. Recognizing the differences in noise between LE and HE beams, the LE and HE data were differentially filtered (in FBP) or regularized (in PL). Both a quadratic (PLQ) and a total-variation penalty (PLTV) were investigated for PL. The performance of DE CBCT material discrimination was quantified in terms of voxelwise specificity, sensitivity, and accuracy. Results: Noise in the HE image was primarily responsible for classification errors within the contrast inserts, whereas noise in the LE image mainly influenced classification in the surrounding water. For inserts of diameter 28.4 mm, DE CBCT reconstructions were optimized to maximize the total combined accuracy across the range of calcium and iodine concentrations, yielding values of ∼88% for FBP and PLQ, and ∼95% for PLTV at 3.1 mGy total dose, increasing to ∼95% for FBP and PLQ, and ∼98% for PLTV at 15.6 mGy total dose. For a

  16. Single-grain Silicon Technology for Large Area X-ray Imaging

    NARCIS (Netherlands)

    Arslan, A.

    2015-01-01

    Digital flat panel X-ray imagers are currently using a-Si and poly-Si thin-film-transistors (TFTs). a-Si TFT permits the use of large area substrates, however, due to the amorphous nature, the carrier mobility is very low (<1 cm2/Vs). Poly-Si TFT improves the mobility (~150 cm2/Vs) but due to random

  17. Image Quality of Digital Direct Flat-Panel Mammography Versus an Indirect Small-Field CCD Technique Using a High-Contrast Phantom

    Directory of Open Access Journals (Sweden)

    Kathrin Barbara Krug

    2011-01-01

    Full Text Available Objective. To compare the detection of microcalcifications on mammograms of an anthropomorphic breast phantom acquired by a direct digital flat-panel detector mammography system (FPM versus a stereotactic breast biopsy system utilizing CCD (charge-coupled device technology with either a 1024 or 512 acquisition matrix (1024 CCD and 512 CCD. Materials and Methods. Randomly distributed silica beads (diameter 100–1400 m and anthropomorphic scatter bodies were applied to 48 transparent films. The test specimens were radiographed on a direct digital FPM and by the indirect 1024 CCD and 512 CCD techniques. Four radiologists rated the monitor-displayed images independently of each other in random order. Results. The rate of correct positive readings for the “number of detectable microcalcifications” for silica beads of 100–199 m in diameter was 54.2%, 50.0% and 45.8% by FPM, 1024 CCD and 512 CCD, respectively. The inter-rater variability was most pronounced for silica beads of 100–199 m in diameter. The greatest agreement with the gold standard was observed for beads >400 m in diameter across all methods. Conclusion. Stereotactic spot images taken by 1024 matrix CCD technique are diagnostically equivalent to direct digital flat-panel mammograms for visualizing simulated microcalcifications >400 m in diameter.

  18. A novel potential source of β-carotene: Eustigmatos cf. polyphem (Eustigmatophyceae) and pilot β-carotene production in bubble column and flat panel photobioreactors.

    Science.gov (United States)

    Li, Zhen; Ma, Xiaoqin; Li, Aifen; Zhang, Chengwu

    2012-08-01

    Carotenoids profile of the unicellular Eustigmatos cf. polyphem (Eustigmatophyceae) and β-carotene production of the microalga in bubble column and large flat panel bioreactors were studied. The microalga which contained β-carotene, violaxanthin and vaucheriaxanthin as the major carotenoids accumulated large amount of β-carotene. The β-carotene production of this microalga in the bubble column bioreactor was considerable, with the maximum intracellular β-carotene content reaching 60.76 mg g(-1), biomass reaching 9.2 g L(-1), and β-carotene yield up to 470.2 mg L(-1). The β-carotene productions in two large flat panel bioreactors were relatively lower, whereas over 100 mg β-carotene L(-1) was achieved. Besides, high light intensity helped to accumulate intracellular β-carotene and biomass. Deficient nitrate supply inhibited biomass growth, though it helped to accumulate β-carotene. Our results first proved that E. cf. polyphem was a potential source and producer of β-carotene, making it an interesting subject for further β-carotene study or commercial exploration. Crown Copyright © 2012. Published by Elsevier Ltd. All rights reserved.

  19. High-quality 3D correction of ring and radiant artifacts in flat panel detector-based cone beam volume CT imaging

    Science.gov (United States)

    Abu Anas, Emran Mohammad; Kim, Jae Gon; Lee, Soo Yeol; Kamrul Hasan, Md

    2011-10-01

    The use of an x-ray flat panel detector is increasingly becoming popular in 3D cone beam volume CT machines. Due to the deficient semiconductor array manufacturing process, the cone beam projection data are often corrupted by different types of abnormalities, which cause severe ring and radiant artifacts in a cone beam reconstruction image, and as a result, the diagnostic image quality is degraded. In this paper, a novel technique is presented for the correction of error in the 2D cone beam projections due to abnormalities often observed in 2D x-ray flat panel detectors. Template images are derived from the responses of the detector pixels using their statistical properties and then an effective non-causal derivative-based detection algorithm in 2D space is presented for the detection of defective and mis-calibrated detector elements separately. An image inpainting-based 3D correction scheme is proposed for the estimation of responses of defective detector elements, and the responses of the mis-calibrated detector elements are corrected using the normalization technique. For real-time implementation, a simplification of the proposed off-line method is also suggested. Finally, the proposed algorithms are tested using different real cone beam volume CT images and the experimental results demonstrate that the proposed methods can effectively remove ring and radiant artifacts from cone beam volume CT images compared to other reported techniques in the literature.

  20. Tuneable Liquid Crystal Micro-Lens Array for Image Contrast Enhancement in a Pixelated Thin Film Photo-Transistor Flat Panel Imager

    Directory of Open Access Journals (Sweden)

    Kun Li

    2017-06-01

    Full Text Available We propose and demonstrate the concept of using a tuneable liquid crystal micro-lens (LCML array to improve the image contrast of a pixelated thin film photo-transistor (TFPT flat panel imager. Such a device can be used to image contents on paper-based media and display a magnified version on a flat panel display for elderly or visually impaired people. Practical aspects including device physical geometry, object scattering profile, LC material, and focusing effect of LCML on an object are considered during the design process with the support of ZEMAX simulations. An optimised effective focal length (EFL has been calculated for the designed LCML to best relay the objects or contents on a paper to the TFPT pixel plane. The designed LCML devices are fabricated with the optimised EFL, and they have good phase depth profiles which are close to a spherical lens profile. Preliminary test results show that the combination of a TFPT imager with an LCML array can make the image contrast more than two times better than that using the TFPT imager alone. The tuneable EFL of the developed LCMLs are useful in the situation where the LCML is not in direct contact with the imaged object.

  1. High-quality 3D correction of ring and radiant artifacts in flat panel detector-based cone beam volume CT imaging

    International Nuclear Information System (INIS)

    Anas, Emran Mohammad Abu; Hasan, Md Kamrul; Kim, Jae Gon; Lee, Soo Yeol

    2011-01-01

    The use of an x-ray flat panel detector is increasingly becoming popular in 3D cone beam volume CT machines. Due to the deficient semiconductor array manufacturing process, the cone beam projection data are often corrupted by different types of abnormalities, which cause severe ring and radiant artifacts in a cone beam reconstruction image, and as a result, the diagnostic image quality is degraded. In this paper, a novel technique is presented for the correction of error in the 2D cone beam projections due to abnormalities often observed in 2D x-ray flat panel detectors. Template images are derived from the responses of the detector pixels using their statistical properties and then an effective non-causal derivative-based detection algorithm in 2D space is presented for the detection of defective and mis-calibrated detector elements separately. An image inpainting-based 3D correction scheme is proposed for the estimation of responses of defective detector elements, and the responses of the mis-calibrated detector elements are corrected using the normalization technique. For real-time implementation, a simplification of the proposed off-line method is also suggested. Finally, the proposed algorithms are tested using different real cone beam volume CT images and the experimental results demonstrate that the proposed methods can effectively remove ring and radiant artifacts from cone beam volume CT images compared to other reported techniques in the literature.

  2. The Usefulness of Three-Dimensional Angiography with a Flat Panel Detector of Direct Conversion Type in a Transcatheter Arterial Chemoembolization Procedure for Hepatocellular Carcinoma: Initial Experience

    International Nuclear Information System (INIS)

    Kakeda, Shingo; Korogi, Yukunori; Hatakeyama, Yoshihisa; Ohnari, Norihiro; Oda, Nobuhiro; Nishino, Kazuyoshi; Miyamoto, Wataru

    2008-01-01

    The purpose of this study was to assess the usefulness of a three-dimensional (3D) angiography system using a flat panel detector of direct conversion type in treatments with subsegmental transcatheter arterial chemoembolization (TACE) for hepatocellular carcinomas (HCCs). Thirty-six consecutive patients who underwent hepatic angiography were prospectively examined. First, two radiologists evaluated the degree of visualization of the peripheral branches of the hepatic arteries on 3D digital subtraction angiography (DSA). Then the radiologists evaluated the visualization of tumor staining and feeding arteries in 25 patients (30 HCCs) who underwent subsegmental TACE. The two radiologists who performed the TACE assessed whether the additional information provided by 3D DSA was useful for treatments. In 34 (94.4%) of 36 patients, the subsegmental branches of the hepatic arteries were sufficiently visualized. The feeding arteries of HCCs were sufficiently visualized in 28 (93%) of 30 HCCs, whereas tumor stains were sufficiently visualized in 18 (60%). Maximum intensity projection images were significantly superior to volume recording images for visualization of the tumor staining and feeding arteries of HCCs. In 27 (90%) of 30 HCCs, 3D DSA provided additional useful information for subsegmental TACE. The high-quality 3D DSA with flat panel detector angiography system provided a precise vascular road map, which was useful for performing subsegmental TACE .of HCCs

  3. Amorphization of silicon via electronic processes induced by irradiation with fullerenes; Amorphisation du silicium par processus electroniques induits par irradiation avec des fullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Canut, B.; Bonardi, N.; Ramos, S.M.M. [Universite Claude Bernard, Dept. de Physique des Materiaux, UMR CNRS, 69 - Lyon (France); Della Negra, S. [Institut de Physique Nucleaire, (IN2P3/CNRS) 91 - Orsay (France)

    1999-07-01

    For the first time it is shown that single crystalline silicon is sensitive to collective electronic excitations. Irradiations with C{sub 60} clusters accelerated in the 10 MeV range induce the formation of amorphous latent tracks in this material. This result has never been observed with high energy heavy ions, it means that what may matter is the very high electronic energy density deposited in the silicon by the incident cluster. TEM (transmission electronic microscopy) analysis of irradiated samples have enable us to measure surface damage cross-sections: 55 nm{sup 2} and 87 nm{sup 2} for irradiations with C{sub 60}{sup 2+} beams and C{sub 60}{sup 3+} beams accelerated respectively to 30 and 40 MeV. (A.C.)

  4. The effects of plasma-assisted chemical vapor deposition process variables on the properties of amorphous silicon carbide films

    Science.gov (United States)

    Moskowitz, Illa Lorren

    Amorphous hydrogenated carbon films containing silicon are of considerable interest for a variety of applications including window layers for solar cells, anti-abrasion coatings, masks for x-ray photolithography and biomedical applications. Plasma-assisted chemical vapor deposition (PACVD) is one of the preferred techniques for depositing these films. a-Si:C:H films were deposited by PACVD using a plasma reactor with capacitively coupled parallel plate configuration operating at 13.56 MHz. The following film properties were studied: intrinsic stress (from the curvature of the substrates), micro-hardness (obtained from nanoindentation), surface roughness and morphology (studied using atomic force microscopy), surface energy (obtained from wetting angle measurements) and the optical constants of the films (as obtained from computer modeling of ellipsometric data). The composition of the films was established from Rutherford backscattering experiments and the hydrogen content was measured using nuclear reaction analysis. By investigating the process variables of the PACVD system using a 2-level factorial experimental design, a better understanding of this complex deposition process has been gained. From this study some of the relationships between the process variables of the PACVD system and physical characteristics of the deposited films such as surface roughness, film stress and optical properties have been established. For example, increasing the energy of bombarding ions produced an increase in the surface roughness under certain conditions, but produced a decrease in roughness under other conditions. In another case, changing the composition of the source gas produced a significant change in the refractive index of the films when the ion energy was high, but had little effect when the ion energy was low. Values obtained for the surface roughness of the films and the dispersion functions of n and k obtained from the ellipsometric modeling were in general

  5. High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

    Energy Technology Data Exchange (ETDEWEB)

    Guha, S.; Yang, J.

    2005-10-01

    The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

  6. Amorphous silicon-carbon nanospheres synthesized by chemical vapor deposition using cheap methyltrichlorosilane as improved anode materials for Li-ion batteries.

    Science.gov (United States)

    Zhang, Zailei; Zhang, Meiju; Wang, Yanhong; Tan, Qiangqiang; Lv, Xiao; Zhong, Ziyi; Li, Hong; Su, Fabing

    2013-06-21

    We report the preparation and characterization of amorphous silicon-carbon (Si-C) nanospheres as anode materials in Li-ion batteries. These nanospheres were synthesized by a chemical vapor deposition at 900 °C using methyltrichlorosilane (CH3SiCl3) as both the Si and C precursor, which is a cheap byproduct in the organosilane industry. The samples were characterized by X-ray diffraction, transmission electron microscopy, scanning electron microscopy, nitrogen adsorption, thermal gravimetric analysis, Raman spectroscopy, and X-ray photoelectron spectroscopy. It was found that the synthesized Si-C nanospheres composed of amorphous C (about 60 wt%) and Si (about 40 wt%) had a diameter of 400-600 nm and a surface area of 43.8 m(2) g(-1). Their charge capacities were 483.6, 331.7, 298.6, 180.6, and 344.2 mA h g(-1) at 50, 200, 500, 1000, and 50 mA g(-1) after 50 cycles, higher than that of the commercial graphite anode. The Si-C amorphous structure could absorb a large volume change of Si during Li insertion and extraction reactions and hinder the cracking or crumbling of the electrode, thus resulting in the improved reversible capacity and cycling stability. The work opens a new way to fabricate low cost Si-C anode materials for Li-ion batteries.

  7. Amorphous TiO2 Shells: A Vital Elastic Buffering Layer on Silicon Nanoparticles for High-Performance and Safe Lithium Storage.

    Science.gov (United States)

    Yang, Jianping; Wang, Yunxiao; Li, Wei; Wang, Lianjun; Fan, Yuchi; Jiang, Wan; Luo, Wei; Wang, Yang; Kong, Biao; Selomulya, Cordelia; Liu, Hua Kun; Dou, Shi Xue; Zhao, Dongyuan

    2017-12-01

    Smart surface coatings of silicon (Si) nanoparticles are shown to be good examples for dramatically improving the cyclability of lithium-ion batteries. Most coating materials, however, face significant challenges, including a low initial Coulombic efficiency, tedious processing, and safety assessment. In this study, a facile sol-gel strategy is demonstrated to synthesize commercial Si nanoparticles encapsulated by amorphous titanium oxide (TiO 2 ), with core-shell structures, which show greatly superior electrochemical performance and high-safety lithium storage. The amorphous TiO 2 shell (≈3 nm) shows elastic behavior during lithium discharging and charging processes, maintaining high structural integrity. Interestingly, it is found that the amorphous TiO 2 shells offer superior buffering properties compared to crystalline TiO 2 layers for unprecedented cycling stability. Moreover, accelerating rate calorimetry testing reveals that the TiO 2 -encapsulated Si nanoparticles are safer than conventional carbon-coated Si-based anodes. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Alternating-direction method of multipliers estimation of attenuation and activity distributions in time-of-flight flat-panel positron emission tomography

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Yueh; Chou, Cheng-Ying [National Taiwan University, Taipei, Taiwan (China)

    2015-05-18

    A quantitative reconstruction of radiotracer activity distribution in positron emission tomography (PET) requires correction of attenuation, which was typically estimated through transmission measurements. The advancement in hardware development has prompted the use of time-of-flight (TOF) to improve PET imaging. Recently, the application of TOF-PET has been further extended to obtain attenuation map in addition to activity distribution simultaneously by use of iterative algorithms. Two flat-panel detectors are employed thus many transaxial lines of response are not detected. In this work, we applied the alternating-direction method of multipliers (ADMM) to simultaneously reconstruct TOF-PET and attenuation estimation in a dualhead small-animal PET system. The results were compared with those obtained by use of the maximum-likelihood algorithm. The computer simulation results showed that the application of the ADMM algorithm could greatly improve the image quality and reduce noisy appearance.

  9. Cone beam breast CT with a high pitch (75 μm), thick (500 μm) scintillator CMOS flat panel detector: Visibility of simulated microcalcifications

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Youtao; Zhong, Yuncheng; Lai, Chao-Jen; Wang, Tianpeng; Shaw, Chris C. [Department of Imaging Physics, The University of Texas M. D. Anderson Cancer Center, Houston, Texas 77030 (United States)

    2013-10-15

    Purpose: To measure and investigate the improvement of microcalcification (MC) visibility in cone beam breast CT with a high pitch (75 μm), thick (500 μm) scintillator CMOS/CsI flat panel detector (Dexela 2923, Perkin Elmer).Methods: Aluminum wires and calcium carbonate grains of various sizes were embedded in a paraffin cylinder to simulate imaging of calcifications in a breast. Phantoms were imaged with a benchtop experimental cone beam CT system at various exposure levels. In addition to the Dexela detector, a high pitch (50 μm), thin (150 μm) scintillator CMOS/CsI flat panel detector (C7921CA-09, Hamamatsu Corporation, Hamamatsu City, Japan) and a widely used low pitch (194 μm), thick (600 μm) scintillator aSi/CsI flat panel detector (PaxScan 4030CB, Varian Medical Systems) were also used in scanning for comparison. The images were independently reviewed by six readers (imaging physicists). The MC visibility was quantified as the fraction of visible MCs and measured as a function of the estimated mean glandular dose (MGD) level for various MC sizes and detectors. The modulation transfer functions (MTFs) and detective quantum efficiencies (DQEs) were also measured and compared for the three detectors used.Results: The authors have demonstrated that the use of a high pitch (75 μm) CMOS detector coupled with a thick (500 μm) CsI scintillator helped make the smaller 150–160, 160–180, and 180–200 μm MC groups more visible at MGDs up to 10.8, 9, and 10.8 mGy, respectively. It also made the larger 200–212 and 212–224 μm MC groups more visible at MGDs up to 7.2 mGy. No performance improvement was observed for 224–250 μm or larger size groups. With the higher spatial resolution of the Dexela detector based system, the apparent dimensions and shapes of MCs were more accurately rendered. The results show that with the aforementioned detector, a 73% visibility could be achieved in imaging 160–180 μm MCs as compared to 28% visibility achieved by

  10. Development of high quantum efficiency, flat panel, thick detectors for megavoltage x-ray imaging: An experimental study of a single-pixel prototype

    International Nuclear Information System (INIS)

    Mei, X.; Pang, G.

    2005-01-01

    Our overall goal is to develop a new generation of electronic portal imaging devices (EPIDs) with a quantum efficiency (QE) more than an order of magnitude higher and a spatial resolution equivalent to that of EPIDs currently used for portal imaging. A novel design of such a high QE flat-panel based EPID was introduced recently and its feasibility was investigated theoretically [see Pang and Rowlands, Med. Phys. 31, 3004 (2004)]. In this work, we constructed a prototype single-pixel detector based on the novel design. Some fundamental imaging properties including the QE, spatial resolution, and sensitivity of the prototype detector were measured with a 6 MV beam. It has been shown that the experimental results agree well with theoretical predictions and further development based on the novel design including the construction of a prototype area detector is warranted

  11. Radiation exposure to operating staff during rotational flat-panel angiography and C-arm cone beam computed tomography (CT) applications.

    Science.gov (United States)

    Schulz, Boris; Heidenreich, Ralf; Heidenreich, Monika; Eichler, Katrin; Thalhammer, Axel; Naeem, Naguib Nagy Naguib; Vogl, Thomas Josef; Zangos, Stefan

    2012-12-01

    To evaluate the radiation exposure for operating personnel associated with rotational flat-panel angiography and C-arm cone beam CT. Using a dedicated angiography-suite, 2D and 3D examinations of the liver were performed on a phantom to generate scattered radiation. Exposure was measured with a dosimeter at predefined heights (eye, thyroid, breast, gonads and knee) at the physician's location. Analysis included 3D procedures with a field of view (FOV) of 24 cm × 18 cm (8s/rotation, 20s/rotation and 5s/2 rotations), and 47 cm×18 cm (16s/2 rotations) and standard 2D angiography (10s, FOV 24 cm×18 cm). Measurements showed the highest radiation dose at the eye and thyroid level. In comparison to 2D-DSA (3.9 μSv eye-exposure), the 3D procedures caused an increased radiation exposure both in standard FOV (8s/rotation: 28.0 μSv, 20s/rotation: 79.3 μSv, 5s/2 rotations: 32.5 μSv) and large FOV (37.6 μSv). Proportional distributions were measured for the residual heights. With the use of lead glass, irradiation of the eye lens was reduced to 0.2 μSv (2D DSA) and 10.6 μSv (3D technique with 20s/rotation). Rotational flat-panel angiography and C-arm cone beam applications significantly increase radiation exposure to the attending operator in comparison to 2D angiography. Our study indicates that the physician should wear protective devices and leave the examination room when performing 3D examinations. Copyright © 2012 Elsevier Ireland Ltd. All rights reserved.

  12. Radiation exposure to operating staff during rotational flat-panel angiography and C-arm cone beam computed tomography (CT) applications

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, Boris, E-mail: boris.schell@googlemail.com [Goethe University Hospital, Department of Diagnostic and Interventional Radiology, Theodor-Stern-Kai 7, 60590 Frankfurt (Germany); Heidenreich, Ralf, E-mail: ralf.heidenreich@roentgen-consult.de [Röntgen-Consult Company, Schulhausstrasse 37, 79199 Kirchzarten (Germany); Heidenreich, Monika, E-mail: info@roentgen-consult.de [Röntgen-Consult Company, Schulhausstrasse 37, 79199 Kirchzarten (Germany); Eichler, Katrin, E-mail: k.eichler@em.uni-frankfurt.de [Goethe University Hospital, Department of Diagnostic and Interventional Radiology, Theodor-Stern-Kai 7, 60590 Frankfurt (Germany); Thalhammer, Axel, E-mail: axel.thalhammer@kgu.de [Goethe University Hospital, Department of Diagnostic and Interventional Radiology, Theodor-Stern-Kai 7, 60590 Frankfurt (Germany); Naeem, Naguib Nagy Naguib, E-mail: nagynnn@yahoo.com [Goethe University Hospital, Department of Diagnostic and Interventional Radiology, Theodor-Stern-Kai 7, 60590 Frankfurt (Germany); Vogl, Thomas Josef, E-mail: T.Vogl@em.uni-frankfurt.de [Goethe University Hospital, Department of Diagnostic and Interventional Radiology, Theodor-Stern-Kai 7, 60590 Frankfurt (Germany); Zangos, Stefan, E-mail: Zangos@em.uni-frankfurt.de [Goethe University Hospital, Department of Diagnostic and Interventional Radiology, Theodor-Stern-Kai 7, 60590 Frankfurt (Germany)

    2012-12-15

    Purpose: To evaluate the radiation exposure for operating personel associated with rotational flat-panel angiography and C-arm cone beam CT. Materials and methods: Using a dedicated angiography-suite, 2D and 3D examinations of the liver were performed on a phantom to generate scattered radiation. Exposure was measured with a dosimeter at predefined heights (eye, thyroid, breast, gonads and knee) at the physician's location. Analysis included 3D procedures with a field of view (FOV) of 24 cm × 18 cm (8 s/rotation, 20 s/rotation and 5 s/2 rotations), and 47 cm × 18 cm (16 s/2 rotations) and standard 2D angiography (10 s, FOV 24 cm × 18 cm). Results: Measurements showed the highest radiation dose at the eye and thyroid level. In comparison to 2D-DSA (3.9 μSv eye-exposure), the 3D procedures caused an increased radiation exposure both in standard FOV (8 s/rotation: 28.0 μSv, 20 s/rotation: 79.3 μSv, 5 s/2 rotations: 32.5 μSv) and large FOV (37.6 μSv). Proportional distributions were measured for the residual heights. With the use of lead glass, irradiation of the eye lens was reduced to 0.2 μSv (2D DSA) and 10.6 μSv (3D technique with 20 s/rotation). Conclusion: Rotational flat-panel angiography and C-arm cone beam applications significantly increase radiation exposure to the attending operator in comparison to 2D angiography. Our study indicates that the physician should wear protective devices and leave the examination room when performing 3D examinations.

  13. The impact of round window vs cochleostomy surgical approaches on interscalar excursions in the cochlea: Preliminary results from a flat-panel computed tomography study

    Directory of Open Access Journals (Sweden)

    Nicole T. Jiam

    2016-09-01

    Full Text Available Objective: To evaluate incidence of interscalar excursions between round window (RW and cochleostomy approaches for cochlear implant (CI insertion. Methods: This was a retrospective case-comparison. Flat-panel CT (FPCT scans for 8 CI users with Med-El standard length electrode arrays were collected. Surgical technique was identified by a combination of operative notes and FPCT imaging. Four cochleae underwent round window insertion and 4 cochleae underwent cochleostomy approaches anterior and inferior to the round window. Results: In our pilot study, cochleostomy approaches were associated with a higher likelihood of interscalar excursion. Within the cochleostomy group, we found 29% of electrode contacts (14 of 48 electrodes to be outside the scala tympani. On the other hand, 8.5% of the electrode contacts (4 of 47 electrodes in the round window insertion group were extra-scalar to the scala tympani. These displacements occurred at a mean angle of occurrence of 364° ± 133°, near the apex of the cochlea. Round window electrode displacements tend to localize at angle of occurrences of 400° or greater. Cochleostomy electrodes occurred at an angle of occurrence of 19°–490°. Conclusions: Currently, the optimal surgical approach for standard CI electrode insertion is highly debated, to a certain extent due to a lack of post-operative assessment of intracochlear electrode contact. Based on our preliminary findings, cochleostomy approach is associated with an increased likelihood of interscalar excursions, and these findings should be further evaluated with future prospective studies. Keywords: Cochlear implantation, Round window insertion, Cochleostomy, Interscalar excursion, Electrode position, Flat-panel computed tomography, Surgical approach

  14. Detection of Cement Leakage After Vertebroplasty with a Non-Flat-Panel Angio Unit Compared to Multidetector Computed Tomography - An Ex Vivo Study

    International Nuclear Information System (INIS)

    Baumann, Clemens; Fuchs, Heiko; Westphalen, Kerstin; Hierholzer, Johannes

    2008-01-01

    The purpose of this study was to investigate the detection of cement leakages after vertebroplasty using angiographic computed tomography (ACT) in a non-flat-panel angio unit compared to multidetector computed tomography (MDCT). Vertebroplasty was performed in 19 of 33 cadaver vertebrae (23 thoracic and 10 lumbar segments). In the angio suite, ACT (190 o ; 1.5 o per image) was performed to obtain volumetric data. Another volumetric data set of the specimen was obtained by MDCT using a standard algorithm. Nine multiplanar reconstructions in standardized axial, coronal, and sagittal planes of every vertebra were generated from both data sets. Images were evaluated on the basis of a nominal scale with 18 criteria, comprising osseous properties (e.g., integrity of the end plate) and cement distribution (e.g., presence of intraspinal cement). MDCT images were regarded as gold standard and analyzed by two readers in a consensus mode. Rotational acquisitions were analyzed by six blinded readers. Results were correlated with the gold standard using Cohen's κ-coefficient analysis. Furthermore, interobserver variability was calculated. Correlation with the gold standard ranged from no correlation (osseous margins of the neuroforamen, κ = 0.008) to intermediate (trace of vertebroplasty canula; κ = 0.615) for criteria referring to osseous morphology. However, there was an excellent correlation for those criteria referring to cement distribution, with κ values ranging from 0.948 (paravertebral cement distribution) to 0.972 (intraspinal cement distribution). With a minimum of κ = 0.768 ('good correlation') and a maximum of κ = 0.91 ('excellent'), interobserver variability was low. In conclusion, ACT in an angio suite without a flat-panel detector depicts a cement leakage after vertebroplasty as well as MDCT. However, the method does not provide sufficient depiction of osseous morphology.

  15. Initial steps toward the realization of large area arrays of single photon counting pixels based on polycrystalline silicon TFTs

    Science.gov (United States)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Jiang, Hao; Street, Robert A.; Lu, Jeng Ping

    2014-03-01

    The thin-film semiconductor processing methods that enabled creation of inexpensive liquid crystal displays based on amorphous silicon transistors for cell phones and televisions, as well as desktop, laptop and mobile computers, also facilitated the development of devices that have become ubiquitous in medical x-ray imaging environments. These devices, called active matrix flat-panel imagers (AMFPIs), measure the integrated signal generated by incident X rays and offer detection areas as large as ~43×43 cm2. In recent years, there has been growing interest in medical x-ray imagers that record information from X ray photons on an individual basis. However, such photon counting devices have generally been based on crystalline silicon, a material not inherently suited to the cost-effective manufacture of monolithic devices of a size comparable to that of AMFPIs. Motivated by these considerations, we have developed an initial set of small area prototype arrays using thin-film processing methods and polycrystalline silicon transistors. These prototypes were developed in the spirit of exploring the possibility of creating large area arrays offering single photon counting capabilities and, to our knowledge, are the first photon counting arrays fabricated using thin film techniques. In this paper, the architecture of the prototype pixels is presented and considerations that influenced the design of the pixel circuits, including amplifier noise, TFT performance variations, and minimum feature size, are discussed.

  16. An investigation of optimal interfacial film condition for Cu-Mn alloy based source/drain electrodes in hydrogenated amorphous silicon thin film transistors

    Directory of Open Access Journals (Sweden)

    Haruhiko Asanuma

    2012-06-01

    Full Text Available To aid in developing next generation Cu-Mn alloy based source/drain interconnects for thin film transistor liquid crystal displays (TFT-LCDs, we have investigated the optimal structure of a pre-formed oxide layer on phosphorus doped hydrogenated amorphous silicon (n+a-Si:H that does not degrade TFT electrical properties. We use transmission electron microscopy (TEM and electron energy loss spectroscopy (EELS to examine composition depth profiles of and structural information for the Cu-Mn alloy/n+a-Si:H interface region. In aiming to achieve the same electrical properties as those of TFTs having conventional Mo source/drain electrodes, we have obtained three important findings: (1 in typical TFT-LCD manufacturing processes, no Mn complex oxide layer is formed because Mn cannot diffuse substantially into an n+a-Si:H surface during low temperature (below 300°C processes and the growth of Mn complex oxide layer would also be limited by the absence of excess oxygen species; (2 a pre-formed silicon oxide layer much thicker than 1 nm severely degrades TFT electrical properties and therefore an ultrathin (≈1 nm silicon oxide layer is required to prevent the degradation; (3 Cu diffuses into an n+a-Si:H layer at oxygen-deficient spots and thus uniform surface oxidation is required to prevent the diffusion.

  17. Present status of amorphous In–Ga–Zn–O thin-film transistors

    Directory of Open Access Journals (Sweden)

    Toshio Kamiya, Kenji Nomura and Hideo Hosono

    2010-01-01

    Full Text Available The present status and recent research results on amorphous oxide semiconductors (AOSs and their thin-film transistors (TFTs are reviewed. AOSs represented by amorphous In–Ga–Zn–O (a-IGZO are expected to be the channel material of TFTs in next-generation flat-panel displays because a-IGZO TFTs satisfy almost all the requirements for organic light-emitting-diode displays, large and fast liquid crystal and three-dimensional (3D displays, which cannot be satisfied using conventional silicon and organic TFTs. The major insights of this review are summarized as follows. (i Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs. (ii A sixth-generation (6G process is demonstrated for 32'' and 37'' displays. (iii An 8G sputtering apparatus and a sputtering target have been developed. (iv The important effect of deep subgap states on illumination instability is revealed. (v Illumination instability under negative bias has been intensively studied, and some mechanisms are proposed. (vi Degradation mechanisms are classified into back-channel effects, the creation of traps at an interface and in the gate insulator, and the creation of donor states in annealed a-IGZO TFTs by the Joule heating; the creation of bulk defects should also be considered in the case of unannealed a-IGZO TFTs. (vii Dense passivation layers improve the stability and photoresponse and are necessary for practical applications. (viii Sufficient knowledge of electronic structures and electron transport in a-IGZO has been accumulated to construct device simulation models.

  18. Electron emission induced modifications in amorphous tetrahedral diamondlike carbon

    International Nuclear Information System (INIS)

    Mercer, T.W.; DiNardo, N.J.; Rothman, J.B.; Siegal, M.P.; Friedmann, T.A.; Martinez-Miranda, L.J.

    1998-01-01

    The cold-cathode electron emission properties of amorphous tetrahedral diamondlike carbon are promising for flat-panel display and vacuum microelectronics technologies. The onset of electron emission is, typically, preceded by open-quotes conditioningclose quotes where the material is stressed by an applied electric field. To simulate conditioning and assess its effect, we combined the spatially localized field and current of a scanning tunneling microscope tip with high-spatial-resolution characterization. Scanning force microscopy shows that conditioning alters surface morphology and electronic structure. Spatially resolved electron-energy-loss spectroscopy indicates that the predominant bonding configuration changes from predominantly fourfold to threefold coordination. copyright 1998 American Institute of Physics

  19. Report of the results of the fiscal 1997 regional consortium R and D project. Regional consortium energy field/R and D high performance flat panel display technology (first fiscal year); 1997 nendo chiiki consortium kenkyu kaihatsu jigyo. Chiiki consortium energy bun`ya / koseino flat panel display gijutsu no sogo kaihatsu kenkyu (daiichi nendo ) seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    One of the subjects in technology supporting the highly information-oriented society which will develop and diversify toward the 21st century is the construction of high grade man/machine interface. For it, high precision/high luminance/energy saving/thin plane displays are strongly requested. This R and D is to indicate models of systematical development in the region of element technology individually existing in the Shikoku area by forming a regional consortium in the industry/universities/government. Creation of new industries by gathering display related enterprises is a first step in a plan to realize `Display Island Shikoku.` As a concrete target, with the use of high-tech diamond semiconducting technology, a development is conducted of the high performance flat panel display using the negative electron affinity (NEA) electron emitter which drastically solves the problems such as luminance, visibility angle and response speed, the subjects on the commercialized liquid crystal flat panel display. 16 refs., 45 figs., 8 tabs.

  20. Core/shell structured NaYF4:Yb3+/Er3+/Gd+3 nanorods with Au nanoparticles or shells for flexible amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Li, Z Q; Li, X D; Liu, Q Q; Chen, X H; Sun, Z; Huang, S M; Liu, C; Ye, X J

    2012-01-01

    A simple approach for preparing near-infrared (NIR) to visible upconversion (UC) NaYF 4 :Yb/Er/Gd nanorods in combination with gold nanostructures has been reported. The grown UC nanomaterials with Au nanostructures have been applied to flexible amorphous silicon solar cells on the steel substrates to investigate their responses to sub-bandgap infrared irradiation. Photocurrent–voltage measurements were performed on the solar cells. It was demonstrated that UC of NIR light led to a 16-fold to 72-fold improvement of the short-circuit current under 980 nm illumination compared to a cell without upconverters. A maximum current of 1.16 mA was obtained for the cell using UC nanorods coated with Au nanoparticles under 980 nm laser illumination. This result corresponds to an external quantum efficiency of 0.14% of the solar cell. Mechanisms of erbium luminescence in the grown UC nanorods were analyzed and discussed. (paper)

  1. The investigation of ZnO:Al2O3/metal composite back reflectors in amorphous silicon germanium thin film solar cells

    International Nuclear Information System (INIS)

    Wang Guang-Hong; Zhao Lei; Yan Bao-Jun; Chen Jing-Wei; Wang Ge; Diao Hong-Wei; Wang Wen-Jing

    2013-01-01

    Different aluminum-doped ZnO (AZO)/metal composite thin films, including AZO/Ag/Al, AZO/Ag/nickel—chromium alloy (NiCr), and AZO/Ag/NiCr/Al, are utilized as the back reflectors of p—i—n amorphous silicon germanium thin film solar cells. NiCr is used as diffusion barrier layer between Ag and Al to prevent mutual diffusion, which increases the short circuit current density of solar cell. NiCr and NiCr/Al layers are used as protective layers of Ag layer against oxidation and sulfurization, the higher efficiency of solar cell is achieved. The experimental results show that the performance of a-SiGe solar cell with AZO/Ag/NiCr/Al back reflector is best. The initial conversion efficiency is achieved to be 8.05%

  2. Optimization of charge-carrier generation in amorphous-silicon thin-film tandem solar cell backed by two-dimensional metallic surface-relief grating

    Science.gov (United States)

    Civiletti, Benjamin J.; Anderson, Tom H.; Ahmad, Faiz; Monk, Peter B.; Lakhtakia, Akhlesh

    2017-08-01

    The rigorous coupled-wave approach was implemented in a three-dimensional setting to calculate the chargecarrier-generation rate in a thin-film solar cell with multiple amorphous-silicon p-i-n junctions. The solar cell comprised a front antireflection window; three electrically isolated p-i-n junctions in tandem; and a periodically corrugated silver back-reflector with hillock-shaped corrugations arranged on a hexagonal lattice. The differential evolution algorithm (DEA) was used to maximize the charge-carrier-generation rate over a set of selected optical and electrical parameters. This optimization exercise minimized the bandgap of the topmost i-layer but all other parameters turned out to be uninfluential. More importantly, the exercise led to a configuration that would very likely render the solar cell inefficient. Therefore, another optimization exercise was conducted to maximize power density. The resulting configuration was optimal over all parameters.

  3. Investigation of the agglomeration and amorphous transformation effects of neutron irradiation on the nanocrystalline silicon carbide (3C-SiC) using TEM and SEM methods

    Energy Technology Data Exchange (ETDEWEB)

    Huseynov, Elchin M., E-mail: elchin.h@yahoo.com [Department of Nanotechnology and Radiation Material Science, National Nuclear Research Center, Inshaatchilar pr. 4, AZ 1073 Baku (Azerbaijan); Institute of Radiation Problems of Azerbaijan National Academy of Sciences, B.Vahabzade 9, AZ 1143 Baku (Azerbaijan)

    2017-04-01

    Nanocrystalline 3C-SiC particles irradiated by neutron flux during 20 h in TRIGA Mark II light water pool type research reactor. Silicon carbide nanoparticles were analyzed by Scanning Electron Microscope (SEM) and Transmission Electron Microscopy (TEM) devices before and after neutron irradiation. The agglomeration of nanoparticles was studied comparatively before and after neutron irradiation. After neutron irradiation the amorphous layer surrounding the nanoparticles was analyzed in TEM device. Neutron irradiation defects in the 3C-SiC nanoparticles and other effects investigated by TEM device. The effect of irradiation on the crystal structure of the nanomaterial was studied by selected area electron diffraction (SAED) and electron diffraction patterns (EDP) analysis.

  4. Crystallization of amorphous silicon thin-film on glass substrate preheated at 650 Degree-Sign C using Xe arc flash of 400 {mu}s

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Dong-Hyun [Department of Mechanical and System Design Engineering, Hongik University, 72-1 Sangsoo-dong, Mapo-koo, Seoul 121-791 (Korea, Republic of); Kim, Byung-Kuk [Viatron Technologies, Suwon Industrial Complex, 972 Gosaek-dong, Kwonsun-koo, Suwon 441-813 (Korea, Republic of); Kim, Hyoung June [Department of Materials Science and Engineering, Hongik University, 72-1 Sangsoo-dong, Mapo-koo, Seoul 121-791 (Korea, Republic of); Park, Seungho, E-mail: spark@hongik.ac.kr [Department of Mechanical and System Design Engineering, Hongik University, 72-1 Sangsoo-dong, Mapo-koo, Seoul 121-791 (Korea, Republic of)

    2012-08-31

    Experimental and theoretical investigations on flash lamp annealing (FLA) of amorphous silicon (a-Si) film on glass were carried out with a view to practical applications in large-window display industries. A Xe arc flash lamp of 950 mm in length and 22 mm in bore diameter was applied with nominal input voltage of 7 kV and flash duration of 400 {mu}s. Prior to the annealing process, the specimen for FLA was preheated at 650 Degree-Sign C, which was very close to the service temperature of the glass specimen used in this study. By employing a focusing elliptic reflector, maximum light energy density of up to 8.4 J/cm{sup 2} could be attained with an active exposure width of 2 cm. Crystallization of a-Si could be achieved in solid-phase by applying a flash beam with light density of at least 5 J/cm{sup 2}, and its phase-transition characteristics that varied with energy densities could be explained by theoretically estimated temperature fields. Electron microscopy observations confirmed that solid-phase crystallization preceded melting of a-Si due to relatively long flashing (heating) duration of 400 {mu}s, which was comparable to solid-phase crystal-growth times at elevated temperatures. - Highlights: Black-Right-Pointing-Pointer Flash lamp annealing of amorphous silicon (a-Si) on glass for large-scale displays Black-Right-Pointing-Pointer Xe-arc flash lamp of 950 mm in length and 22 mm in bore diameter Black-Right-Pointing-Pointer Flash duration of 400 {mu}s at nominal input voltage of 7 kV Black-Right-Pointing-Pointer Solid-phase crystallization precedes melting of a-Si due to long flashing duration.

  5. Highly tunable electronic properties in plasma-synthesized B-doped microcrystalline-to-amorphous silicon nanostructure for solar cell applications

    Science.gov (United States)

    Lim, J. W. M.; Ong, J. G. D.; Guo, Y.; Bazaka, K.; Levchenko, I.; Xu, S.

    2017-10-01

    Highly controllable electronic properties (carrier mobility and conductivity) were obtained in the sophisticatedly devised, structure-controlled, boron-doped microcrystalline silicon structure. Variation of plasma parameters enabled fabrication of films with the structure ranging from a highly crystalline (89.8%) to semi-amorphous (45.4%) phase. Application of the innovative process based on custom-designed, optimized, remote inductively coupled plasma implied all advantages of the plasma-driven technique and simultaneously avoided plasma-intrinsic disadvantages associated with ion bombardment and overheating. The high degree of SiH4, H2 and B2H6 precursor dissociation ensured very high boron incorporation into the structure, thus causing intense carrier scattering. Moreover, the microcrystalline-to-amorphous phase transition triggered by the heavy incorporation of the boron dopant with increasing B2H6 flow was revealed, thus demonstrating a very high level of the structural control intrinsic to the process. Control over the electronic properties through variation of impurity incorporation enabled tailoring the carrier concentrations over two orders of magnitude (1018-1020 cm-3). These results could contribute to boosting the properties of solar cells by paving the way to a cheap and efficient industry-oriented technique, guaranteeing a new application niche for this new generation of nanomaterials.

  6. Flat panel detector-based cone beam computed tomography with a circle-plus-two-arcs data acquisition orbit: Preliminary phantom study

    International Nuclear Information System (INIS)

    Ning Ruola; Tang Xiangyang; Conover, David; Yu Rongfeng

    2003-01-01

    Cone beam computed tomography (CBCT) has been investigated in the past two decades due to its potential advantages over a fan beam CT. These advantages include (a) great improvement in data acquisition efficiency, spatial resolution, and spatial resolution uniformity, (b) substantially better utilization of x-ray photons generated by the x-ray tube compared to a fan beam CT, and (c) significant advancement in clinical three-dimensional (3D) CT applications. However, most studies of CBCT in the past are focused on cone beam data acquisition theories and reconstruction algorithms. The recent development of x-ray flat panel detectors (FPD) has made CBCT imaging feasible and practical. This paper reports a newly built flat panel detector-based CBCT prototype scanner and presents the results of the preliminary evaluation of the prototype through a phantom study. The prototype consisted of an x-ray tube, a flat panel detector, a GE 8800 CT gantry, a patient table and a computer system. The prototype was constructed by modifying a GE 8800 CT gantry such that both a single-circle cone beam acquisition orbit and a circle-plus-two-arcs orbit can be achieved. With a circle-plus-two-arcs orbit, a complete set of cone beam projection data can be obtained, consisting of a set of circle projections and a set of arc projections. Using the prototype scanner, the set of circle projections were acquired by rotating the x-ray tube and the FPD together on the gantry, and the set of arc projections were obtained by tilting the gantry while the x-ray tube and detector were at the 12 and 6 o'clock positions, respectively. A filtered backprojection exact cone beam reconstruction algorithm based on a circle-plus-two-arcs orbit was used for cone beam reconstruction from both the circle and arc projections. The system was first characterized in terms of the linearity and dynamic range of the detector. Then the uniformity, spatial resolution and low contrast resolution were assessed using

  7. Measurement of effective detective quantum efficiency for a photon counting scanning mammography system and comparison with two flat panel full-field digital mammography systems

    Science.gov (United States)

    Wood, Tim J.; Moore, Craig S.; Saunderson, John R.; Beavis, Andrew W.

    2018-01-01

    Effective detective quantum efficiency (eDQE) describes the resolution and noise properties of an imaging system along with scatter and primary transmission, all measured under clinically appropriate conditions. Effective dose efficiency (eDE) is the eDQE normalised to mean glandular dose and has been proposed as a useful metric for the optimisation of clinical imaging systems. The aim of this study was to develop a methodology for measuring eDQE and eDE on a Philips microdose mammography (MDM) L30 photon counting scanning system, and to compare performance with two conventional flat panel systems. A custom made lead-blocker was manufactured to enable the accurate determination of dose measurements, and modulation transfer functions were determined free-in-air at heights of 2, 4 and 6 cm above the breast support platform. eDQE were calculated for a Philips MDM L30, Hologic Dimensions and Siemens Inspiration digital mammography system for 2, 4 and 6 cm thick poly(methyl methacrylate) (PMMA). The beam qualities (target/filter and kilovoltage) assessed were those selected by the automatic exposure control, and anti-scatter grids were used where available. Measurements of eDQE demonstrate significant differences in performance between the slit- and scan-directions for the photon counting imaging system. MTF has been shown to be the limiting factor in the scan-direction, which results in a rapid fall in eDQE at mid-to-high spatial frequencies. A comparison with two flat panel mammography systems demonstrates that this may limit image quality for small details, such as micro-calcifications, which correlates with a more conventional image quality assessment with the CDMAM phantom. eDE has shown the scanning photon counting system offers superior performance for low spatial frequencies, which will be important for the detection of large low contrast masses. Both eDQE and eDE are proposed as useful metrics that should enable optimisation of the Philips MDM L30.

  8. Hydrogen production by the engineered cyanobacterial strain Nostoc PCC 7120 ΔhupW examined in a flat panel photobioreactor system.

    Science.gov (United States)

    Nyberg, Marcus; Heidorn, Thorsten; Lindblad, Peter

    2015-12-10

    Nitrogenase based hydrogen production was examined in a ΔhupW strain of the filamentous heterocystous cyanobacterium Nostoc PCC 7120, i.e., cells lacking the last step in the maturation system of the large subunit of the uptake hydrogenase and as a consequence with a non-functional uptake hydrogenase. The cells were grown in a developed flat panel photobioreactor system with 3.0L culture volume either aerobically (air) or anaerobically (Ar or 80% N2/20% Ar) and illuminated with a mixture of red and white LED. Aerobic growth of the ΔhupW strain of Nostoc PCC 7120 at 44μmolar photons m(-2)s(-1) PAR gave the highest hydrogen production of 0.7mL H2 L(-1)h(-1), 0.53mmol H2 mg chlorophyll a(-1)h(-1), and a light energy conversion efficiency of 1.2%. Anaerobic growth using 100% argon showed a maximal hydrogen production of 1.7mLL(-1)h(-1), 0.85mmol per mg chlorophyll a(-1) h(-1), and a light energy conversion efficiency of 2.7%. Altering between argon/N2 (20/80) and 100% argon phases resulted in a maximal hydrogen production at hour 128 (100% argon phase) with 6.2mL H2L(-1)h(-1), 0.71mL H2 mg chlorophyll a(-1)h(-1), and a light energy efficiency conversion of 4.0%. The highest buildup of hydrogen gas observed was 6.89% H2 (100% argon phase) of the total photobioreactor system with a maximal production of 4.85mL H2 L(-1)h(-1). The present study clearly demonstrates the potential to use purpose design cyanobacteria in developed flat panel photobioreactor systems for the direct production of the solar fuel hydrogen. Further improvements in the strain used, environmental conditions employed, and growth, production and collection systems used, are needed before a sustainable and economical cyanobacterial based hydrogen production can be realized. Copyright © 2015 Elsevier B.V. All rights reserved.

  9. The Effect of Round Window vs Cochleostomy Surgical Approaches on Cochlear Implant Electrode Position: A Flat-Panel Computed Tomography Study.

    Science.gov (United States)

    Jiam, Nicole T; Jiradejvong, Patpong; Pearl, Monica S; Limb, Charles J

    2016-09-01

    The round window insertion (RWI) and cochleostomy approaches are the 2 most common surgical techniques used in cochlear implantation (CI). However, there is no consensus on which approach is ideal for electrode array insertion, in part because visualization of intracochlear electrode position is challenging, so postoperative assessment of intracochlear electrode contact is lacking. To measure and compare electrode array position between RWI and cochleostomy approaches for CI insertion. Retrospective case-comparison study of 17 CI users with Med-El standard-length electrode arrays who underwent flat-panel computed tomography scans after CI surgery at a tertiary referral center. The data was analyzed in October 2015. Flat-panel computed tomography scans were collected between January 1 and August 31, 2013, for 22 electrode arrays. The surgical technique was identified by a combination of operative notes and imaging. Eight cochleae underwent RWI and 14 cochleae underwent cochleostomy approaches anterior and inferior to the round window. Interscalar electrode position and electrode centroid distance to the osseous spiral lamina, lateral bony wall, and central axis of the modiolus. Nine participants were men, and 8, women; the mean age was 54.4 (range, 21-64) years. Electrode position was significantly closer to cochlear neural elements with RWI than cochleostomy approaches. Between the 2 surgical approaches, the RWI technique produced shorter distances between the electrode and the modiolus (mean difference, -0.33 [95% CI, -0.29 to -0.39] mm in the apical electrode; -1.42 [95% CI, -1.24 to -1.57] mm in the basal electrode). This difference, which was most prominent in the first third and latter third of the basal turn, decreased after the basal turn. The RWI approach was associated with an increased likelihood of perimodiolar placement. Opting to use RWI over cochleostomy approaches in CI candidates may position electrodes closer to cochlear neural substrates and

  10. The formation of an amorphous interface layer precedes the onset of the nucleation of an orderly carbon structure on a silicon wafer

    Science.gov (United States)

    Belay, Kalayu; Jackson, Jeremy; Johnson, Kevin

    2002-03-01

    A thin film was grown by plasma assisted chemical vapor deposition (PACVD) process on a heated silicon wafer substrate. The reactants in the process were 298pressure and substrate temperature were 40 Torr and 9000 C respectively. The silicon wafer was scratched with diamond dust to increase the rate of nucleation. Upon absorbing energy from microwave generated plasma the methane breaks down freeing the carbon atoms, which are deposited on the substrate. The system was run for ten hours. A seemingly uniform milky thin layer of film was formed on the substrate. Initial characterization using an X-ray diffractometer was unable to detect the presence of any orderly structure of carbon atoms forming diamond or graphite. This leads us to believe that an amorphous interlayer is formed before diamond or other diamond like structure is formed on the substrate. Results of additional investigations and interpretations will be reported. *This research was supported in part by a grant from NASA MURED to Florida A&M University.

  11. Amorphous silicon solar cells. Comparison of p-i-n and n-i-p structures with zinc-oxide front contact

    International Nuclear Information System (INIS)

    Wieder, S.

    1999-12-01

    This work compares amorphous silicon solar cells in the p-i-n and n-i-p structure. In both cell structures, sputtered zinc-oxide (ZnO) films were established as front contact. We developed smooth TCO films with high conductivity and high transparency. The required surface texture is achieved by a post deposition wet chemical etching step in diluted HCl. In both cell structures, a contact barrier emerges at the amorphous-p/ZnO interface. In both cases, the negative effects of the barrier on the electrical properties of the solar cell are avoided by the application of highly conductive, microcrystalline p-layers (μc-p), which were developed with the RF as well as the VHF deposition technique. We were able to clearly show that the optimum p-layer structure for a-Si:H solar cells with ZnO front contact is an amorphous/microcrystalline double-layer: The thin μc-p-layer provides a low-ohmic ZnO/p-contact, while an amorphous phase is essential in order to build up a high open-circuit voltage (V OC ). The optical optimization led to high quantum efficiencies in both cell types and showed an advantage of the n-i-p structure in the laboratory caused by the possible antireflection design of the front contact in this structure. We confirmed literature reports asserting a drop in the V oc of p-i-n cells when using elevated substrate temperatures during deposition of the i-layer material, while the decrease in V oc for the n-i-p cells simply correlates with the decrease of the band gap of the absorber material. The implementation of the developed materials led to a highly efficient a-Si:H/a-Si:H tandem cell in the p-i-n structure on sputtered ZnO with 9.2% stable efficiency after 900 h of light soaking. The transfer of the achieved results to module production is performed in an joint venture between research and industry. (orig.)

  12. Structural noise from automatic exposure control device and its relationship to X-ray tube voltage used for calibration of a flat-panel detector system.

    Science.gov (United States)

    Mizuta, Masayoshi; Akazawa, Hiroyuki; Kasai, Toshifumi; Sanada, Shigeru; Abe, Shuji; Mitou, Shigeki

    2012-01-01

    In flat-panel detector (FPD) systems, the ion-chamber dosimeters used for automatic exposure control (AEC), which are placed between the detector and the source, should not affect clinical images because of FPD gain correction, but can sometimes still introduce fixed-pattern noise. In this study, we investigated whether such artifacts were caused by structural noise from the AEC detector on the basis of the noise power spectrum (NPS) and the mean square error (MSE) of FPD images taken at various tube voltages either with or without the AEC detector. When the NPS was measured without the AEC detector, the NPS did not increase in the low special-frequency band at all radiation qualities tested, irrespective of X-ray calibration tube voltages. However, when the NPS was measured while the AEC detector was used, the NPS increased in the low special-frequency band at all radiation qualities when the X-ray calibration tube voltages were at low levels. Similarly, the MSE increased when the X-ray calibration tube voltages were at low levels. From these results, artifacts in the AEC detector appear to be suppressed when a radiation quality of approximately 90 kV is used at four different standardized radiations quality (RQA3, RQA5, RQA7, and RQA9).

  13. Flat-Panel Detector—Based Volume Computed Tomography: A Novel 3D Imaging Technique to Monitor Osteolytic Bone Lesions in a Mouse Tumor Metastasis Model

    Directory of Open Access Journals (Sweden)

    Jeannine Missbach-Guentner

    2007-09-01

    Full Text Available Skeletal metastasis is an important cause of mortality in patients with breast cancer. Hence, animal models, in combination with various imaging techniques, are in high demand for preclinical assessment of novel therapies. We evaluated the applicability of flat-panel volume computed tomography (fpVCT to noninvasive detection of osteolytic bone metastases that develop in severe immunodeficient mice after intracardial injection of MDA-MB-231 breast cancer cells. A single fpVCT scan at 200-wm isotropic resolution was employed to detect osteolysis within the entire skeleton. Osteolytic lesions identified by fpVCT correlated with Faxitron X-ray analysis and were subsequently confirmed by histopathological examination. Isotropic three-dimensional image data sets obtained by fpVCT were the basis for the precise visualization of the extent of the lesion within the cortical bone and for the measurement of bone loss. Furthermore, fpVCT imaging allows continuous monitoring of growth kinetics for each metastatic site and visualization of lesions in more complex regions of the skeleton, such as the skull. Our findings suggest that fpVCT is a powerful tool that can be used to monitor the occurrence and progression of osteolytic lesions in vivo and can be further developed to monitor responses to antimetastatic therapies over the course of the disease.

  14. Preparation and electrochemical performance of copper foam-supported amorphous silicon thin films for rechargeable lithium-ion batteries

    International Nuclear Information System (INIS)

    Li Haixia; Cheng Fangyi; Zhu Zhiqiang; Bai Hongmei; Tao Zhanliang; Chen Jun

    2011-01-01

    Research highlights: → Amorphous Si thin films have been deposited on copper foam substrate by radio-frequency (rf) magnetron sputtering. → The as-prepared Si/Cu films with interconnected 3-dimensional structure are employed as anode materials of rechargeable lithium-ion batteries, showing that the electrode properties are greatly affected by the deposition temperature. → The film electrode deposited at an optimum temperature of 300 deg. C delivers a specific capacity of ∼2900 mAh/g and a coulombic efficiency above 95% at charge/discharge current density of 0.2C after 30 cycles. → The Li + diffusion coefficiency in copper foam-supported Si thin films is determined to be 2.36 x 10 -9 cm 2 /s. → The combination of rf magnetron sputtering and cooper foam substrate is an efficient route to prepare amorphous Si films with high capacity and cyclability due to the efficient ionic diffusion and interface contact with a good conductive current collector. - Abstract: Amorphous Si thin films, which have been deposited on copper foam by radio-frequency (rf) magnetron sputtering, are employed as anode materials of rechargeable lithium-ion batteries. The morphologies and structures of the as-prepared Si thin films are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray powder diffraction (XRD). Electrochemical performance of lithium-ion batteries with the as-prepared Si films as the anode materials is investigated by cyclic voltammetry and charge-discharge measurements. The results show that the electrode properties of the prepared amorphous Si films are greatly affected by the deposition temperature. The film electrode deposited at an optimum temperature of 300 deg. C can deliver a specific capacity of ∼2900 mAh/g and a coulombic efficiency above 95% at charge/discharge current density of 0.2C after 30 cycles. The Li + diffusion coefficiency in copper foam-supported Si thin films is determined to be 2.36 x 10 -9 cm

  15. Anisotropy of optical, electrical, and photoelectrical properties of amorphous hydrogenated silicon films modified by femtosecond laser irradiation

    Science.gov (United States)

    Amasev, D. V.; Khenkin, M. V.; Drevinskas, R.; Kazansky, P.; Kazanskii, A. G.

    2017-06-01

    Two types of independent anisotropic structures have been formed simultaneously in amorphous hydrogenated films by applying a femtosecond laser pulse to them, i.e., a structure with a period of several micrometers to several tens of micrometers and a structure with a period of several hundred nanometers. The formation mechanisms of these strictures are different, which allows us to orient them relative to each other in a desirable way. Both structures independently influence the optical properties of the modified films, which causes the diffraction of transmitted light and making the films polarization-sensitive. The conductivity of the modified films correlates with the mutual orientation of the anisotropic structures, whereas no interrelation between the photoconductivity and optical performance of the modified films has been observed.

  16. Valence band offset and Schottky barrier at amorphous boron and boron carbide interfaces with silicon and copper

    Science.gov (United States)

    King, Sean W.; French, Marc; Xu, Guanghai; French, Benjamin; Jaehnig, Milt; Bielefeld, Jeff; Brockman, Justin; Kuhn, Markus

    2013-11-01

    In order to understand the fundamental charge transport in a-B:H and a-BX:H (X = C, N, P) compound heterostructure devices, X-ray photoelectron spectroscopy has been utilized to determine the valence band offset and Schottky barrier present at amorphous boron compound interfaces formed with (1 0 0) Si and polished poly-crystalline Cu substrates. For interfaces formed by plasma enhanced chemical vapor deposition of a-B4-5C:H on (1 0 0) Si, relatively small valence band offsets of 0.2 ± 0.2 eV were determined. For a-B:H/Cu interfaces, a more significant Schottky barrier of 0.8 ± 0.16 eV was measured. These results are in contrast to those observed for a-BN:H and BP where more significant band discontinuities (>1-2 eV) were observed for interfaces with Si and Cu.

  17. Amorphous SiO {sub x} nanowires grown on silicon (100) substrates via rapid thermal process of nanodiamond films

    Energy Technology Data Exchange (ETDEWEB)

    Liang Xingbo [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Wang Lei [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Yang Deren [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)]. E-mail: mseyang@zju.edu.cn

    2006-05-01

    Rapid thermal process (RTP) has been carried out on the deposited nanocrystalline diamond (NCD) films. The RTP treatments performed at 800 and 1200 deg. C have been shown to exert prominent influence on the morphology and structure of the NCD films. The loss of material at grain boundaries has been observed at both 800 and 1200 deg. C RTP treatments. Large-scale amorphous SiO {sub x} nanowires with diameters of 30-50 nm and length up to 10 {mu}m were synthesized after RTP treatment at 1200 deg. C for 60 s. The synthesized nanowires were characterized in detail by scanning electron microscopy, transmission electron microscopy, selected area electron diffraction and energy-dispersed X-ray spectrometry analysis. A possible growth mechanism has been proposed to explain the observed phenomenon.

  18. High-EPA Biomass from Nannochloropsis salina Cultivated in a Flat-Panel Photo-Bioreactor on a Process Water-Enriched Growth Medium.

    Science.gov (United States)

    Safafar, Hamed; Hass, Michael Z; Møller, Per; Holdt, Susan L; Jacobsen, Charlotte

    2016-07-29

    Nannochloropsis salina was grown on a mixture of standard growth media and pre-gasified industrial process water representing effluent from a local biogas plant. The study aimed to investigate the effects of enriched growth media and cultivation time on nutritional composition of Nannochloropsis salina biomass, with a focus on eicosapentaenoic acid (EPA). Variations in fatty acid composition, lipids, protein, amino acids, tocopherols and pigments were studied and results compared to algae cultivated on F/2 media as reference. Mixed growth media and process water enhanced the nutritional quality of Nannochloropsis salina in laboratory scale when compared to algae cultivated in standard F/2 medium. Data from laboratory scale translated to the large scale using a 4000 L flat panel photo-bioreactor system. The algae growth rate in winter conditions in Denmark was slow, but results revealed that large-scale cultivation of Nannochloropsis salina at these conditions could improve the nutritional properties such as EPA, tocopherol, protein and carotenoids compared to laboratory-scale cultivated microalgae. EPA reached 44.2% ± 2.30% of total fatty acids, and α-tocopherol reached 431 ± 28 µg/g of biomass dry weight after 21 days of cultivation. Variations in chemical compositions of Nannochloropsis salina were studied during the course of cultivation. Nannochloropsis salina can be presented as a good candidate for winter time cultivation in Denmark. The resulting biomass is a rich source of EPA and also a good source of protein (amino acids), tocopherols and carotenoids for potential use in aquaculture feed industry.

  19. Cone-beam CT with a flat-panel detector on a mobile C-arm: preclinical investigation in image-guided surgery of the head and neck

    Science.gov (United States)

    Siewerdsen, J. H.; Chan, Y.; Rafferty, M. A.; Moseley, D. J.; Jaffray, D. A.; Irish, J. C.

    2005-04-01

    A promising imaging platform for combined low-dose fluoroscopy and cone-beam CT (CBCT) guidance of interventional procedures has been developed in our laboratory. Based on a mobile isocentric C-arm (Siemens PowerMobil) incorporating a high-performance flat-panel detector (Varian PaxScan 4030CB), the system demonstrates sub-mm 3D spatial resolution and soft-tissue visibility with field of view sufficient for head and body sites. For pre-clinical studies in head neck tumor surgery, we hypothesize that the 3D intraoperative information provided by CBCT permits precise, aggressive techniques with improved avoidance of critical structures. The objectives include: 1) quantify improvement in surgical performance achieved with CBCT guidance compared to open and endoscopic techniques; and 2) investigate specific, challenging surgical tasks under CBCT guidance. Investigations proceed from an idealized phantom model to cadaveric specimens. A novel surgical performance evaluation method based on statistical decision theory is applied to excision and avoidance tasks. Analogous to receiver operating characteristic (ROC) analysis in medical imaging, the method quantifies surgical performance in terms of Lesion-Excised (True-Positve), Lesion-Remaining (False-Negative), Normal-Excised (False-Positive), and Normal-Remaining (True-Negative) fractions. Conservative and aggressive excision and avoidance tasks are executed in 12 cadaveric specimens with and without CBCT guidance, including: dissection through dura, preservation of posterior lamina, ethmoid air cells removal, exposure of peri-orbita, and excision of infiltrated bone in the skull base (clivus). Intraoperative CBCT data was found to dramatically improve surgical performance and confidence in the execution of such tasks. Pre-clinical investigation of this platform in head and neck surgery, as well as spinal, trauma, biopsy, and other nonvascular procedures, is discussed.

  20. High-EPA Biomass from Nannochloropsis salina Cultivated in a Flat-Panel Photo-Bioreactor on a Process Water-Enriched Growth Medium

    Directory of Open Access Journals (Sweden)

    Hamed Safafar

    2016-07-01

    Full Text Available Nannochloropsis salina was grown on a mixture of standard growth media and pre-gasified industrial process water representing effluent from a local biogas plant. The study aimed to investigate the effects of enriched growth media and cultivation time on nutritional composition of Nannochloropsis salina biomass, with a focus on eicosapentaenoic acid (EPA. Variations in fatty acid composition, lipids, protein, amino acids, tocopherols and pigments were studied and results compared to algae cultivated on F/2 media as reference. Mixed growth media and process water enhanced the nutritional quality of Nannochloropsis salina in laboratory scale when compared to algae cultivated in standard F/2 medium. Data from laboratory scale translated to the large scale using a 4000 L flat panel photo-bioreactor system. The algae growth rate in winter conditions in Denmark was slow, but results revealed that large-scale cultivation of Nannochloropsis salina at these conditions could improve the nutritional properties such as EPA, tocopherol, protein and carotenoids compared to laboratory-scale cultivated microalgae. EPA reached 44.2% ± 2.30% of total fatty acids, and α-tocopherol reached 431 ± 28 µg/g of biomass dry weight after 21 days of cultivation. Variations in chemical compositions of Nannochloropsis salina were studied during the course of cultivation. Nannochloropsis salina can be presented as a good candidate for winter time cultivation in Denmark. The resulting biomass is a rich source of EPA and also a good source of protein (amino acids, tocopherols and carotenoids for potential use in aquaculture feed industry.

  1. The influence of antiscatter grids on soft-tissue detectability in cone-beam computed tomography with flat-panel detectors

    International Nuclear Information System (INIS)

    Siewerdsen, J.H.; Moseley, D.J.; Bakhtiar, B.; Richard, S.; Jaffray, D.A.

    2004-01-01

    The influence of antiscatter x-ray grids on image quality in cone-beam computed tomography (CT) is evaluated through broad experimental investigation for various anatomical sites (head and body), scatter conditions (scatter-to-primary ratio (SPR) ranging from ∼10% to 150%), patient dose, and spatial resolution in three-dimensional reconstructions. Studies involved linear grids in combination with a flat-panel imager on a system for kilovoltage cone-beam CT imaging and guidance of radiation therapy. Grids were found to be effective in reducing x-ray scatter 'cupping' artifacts, with heavier grids providing increased image uniformity. The system was highly robust against ring artifacts that might arise in CT reconstructions as a result of gridline shadows in the projection data. The influence of grids on soft-tissue detectability was evaluated quantitatively in terms of absolute contrast, voxel noise, and contrast-to-noise ratio (CNR) in cone-beam CT reconstructions of 16 cm 'head' and 32 cm 'body' cylindrical phantoms. Imaging performance was investigated qualitatively in observer preference tests based on patient images (pelvis, abdomen, and head-and-neck sites) acquired with and without antiscatter grids. The results suggest that although grids reduce scatter artifacts and improve subject contrast, there is little strong motivation for the use of grids in cone-beam CT in terms of CNR and overall image quality under most circumstances. The results highlight the tradeoffs in contrast and noise imparted by grids, showing improved image quality with grids only under specific conditions of high x-ray scatter (SPR>100%), high imaging dose (D center >2 cGy), and low spatial resolution (voxel size ≥1 mm)

  2. Radiation dose reduction in scoliosis patients. Low-dose full-spine radiography with digital flat panel detector and image stitching system

    Energy Technology Data Exchange (ETDEWEB)

    Grieser, T. [Klinikum Augsburg (Germany). Klinik fuer Diagnostische Radiologie und Neuroradiologie; Baldauf, A.Q. [Theresienkrankenhaus Mannheim (Germany). Abt. fuer Radiologie; Ludwig, K. [Klinikum Herford (Germany). Klinik fuer Diagnostische und Interventionelle Radiologie

    2011-07-15

    Purpose: To evaluate the exposure dose reduction with a digital flat panel detector (FPD) and an image stitching system (ISS) in full-spine radiography for scoliosis patients. Materials and Methods: During a 6-month period, all consecutive scoliosis patients with a clinical indication for full-spine radiography (n = 50) were examined with an FPD and ISS. Automatic exposure control adjusted to speed class 1600 was used together with age-adjusted tube voltage and filtration. Dose area products were recorded for all images (antero-posterior n = 50, lateral n = 18). Images were evaluated by two radiologists for the possibility (possible, impossible) of typical scoliosis measurements (Cobb angle, Stagnara angle, lateral deviation, Risser stage). All measurements assessed as impossible underwent a second evaluation categorizing the reason why a measurement was impossible (underlying pathology, projection, image quality). Patient characteristics influencing exposure were recorded (sex, age, weight, height). Mean dose area products were compared to the literature with consideration of patient group and image quality. Results: The mean dose area product was 16.8 {mu}Gy m{sup 2} for antero-posterior images and 26.6 {mu}Gy m{sup 2} for lateral images. A comparison to published values showed an exposure dose reduction of 47 % to 93 %. Measurement of the Cobb and Stagnara angle, lateral deviation and Risser stage was possible in 96 % (n = 50), 83 % (n = 18), 100 % (n = 50) and 100 % (n = 50) of cases. The reasons for impossible measurements were independent of image quality (underlying pathologies, projection). Conclusion: When imaging scoliosis patients, an FPD combined with an ISS can substantially reduce the exposure dose. (orig.)

  3. Usefulness of DICOM headers in the analysis of two biplane X-ray systems setting (image intensifier and flat panel) used in pediatric interventional cardiology in Chile

    International Nuclear Information System (INIS)

    Ubeda, C.; Vergara, F.

    2009-01-01

    The setting of two biplane X ray systems were evaluated (image intensifier (II) and flat panel (PP)), through DICOM tags from 32 images created during the characterization of both systems. The technical parameters adjusted for systems were: 63,8 to 80,0 kV and 15,0 to 388,0 mA, for the system with II and 52,0 to 77,0 kV and 25,0 to 476,0 mA, for the system with PP detector. Both equipment presented a different mA adjustment, when moving from fluoroscopy modes low dose (FL), medium dose (FM) and high dose (FH) to cine mode (CI). Two dosimetric quantities were evaluated, the first one was the dose-area product (DAP) which gave as a result for FB mode, between 0,03 to 0,35 uGycm 2 /image (II) and from 0,05 a 0,69 uGycm 2 /image (PP), when the polymethyl methacrylate (PMMA) thickness was incremented from 4 to 16 cm. In cine mode the DAP quantity showed, percentage values from 24 to -1 % for the same PMMA increment. Skin cumulative dose was the second quantity evaluated and showed an increment of incident air kerma (KAI)/image in factors from 17 to 35 (II) and 15 to 28 (PP) when used in CI mode instead of FB mode, to the different PMMA thicknesses used. This dose increment for CI mode must be considered by cardiologists, to use the fluoroscopic run as an alternative to document part of the procedures when there is no need to use a high quality image (author)

  4. Performance of a static-anode/flat-panel x-ray fluoroscopy system in a diagnostic strength magnetic field: a truly hybrid x-ray/MR imaging system.

    Science.gov (United States)

    Fahrig, R; Wen, Z; Ganguly, A; DeCrescenzo, G; Rowlands, J A; Stevens, G M; Saunders, R F; Pelc, N J

    2005-06-01

    Minimally invasive procedures are increasing in variety and frequency, facilitated by advances in imaging technology. Our hybrid imaging system (GE Apollo flat panel, custom Brand x-ray static anode x-ray tube, GE Lunar high-frequency power supply and 0.5 T Signa SP) provides both x-ray and MR imaging capability to guide complex procedures without requiring motion of the patient between two distant gantries. The performance of the x-ray tube in this closely integrated system was evaluated by modeling and measuring both the response of the filament to an externally applied field and the behavior of the electron beam for field strengths and geometries of interest. The performance of the detector was assessed by measuring the slanted-edge modulation transfer function (MTF) and when placed at zero field and at 0.5 T. Measured resonant frequencies of filaments can be approximated using a modified vibrating beam model, and were at frequencies well below the 25 kHz frequency of our generator for our filament geometry. The amplitude of vibration was not sufficient to cause shorting of the filament during operation within the magnetic field. A simple model of electrons in uniform electric and magnetic fields can be used to estimate the deflection of the electron beam on the anode for the fields of interest between 0.2 and 0.5 T. The MTF measured at the detector and the DQE showed no significant difference inside and outside of the magnetic field. With the proper modifications, an x-ray system can be fully integrated with a MR system, with minimal loss of image quality. Any x-ray tube can be assessed for compatibility when placed at a particular location within the field using the models. We have also concluded that a-Si electronics are robust against magnetic fields. Detailed knowledge of the x-ray system installation is required to provide estimates of system operation.

  5. Electron beam recrystallization of amorphous semiconductor materials

    Science.gov (United States)

    Evans, J. C., Jr.

    1968-01-01

    Nucleation and growth of crystalline films of silicon, germanium, and cadmium sulfide on substrates of plastic and glass were investigated. Amorphous films of germanium, silicon, and cadmium sulfide on amorphous substrates of glass and plastic were converted to the crystalline condition by electron bombardment.

  6. Amorphous silicon crystallization by laser. Report of the experiments at Frascati (Project Foto); Cristallizzazione di silicio amorfo via laser. Rapporto degli esperimenti a frascati (Progetto Foto)

    Energy Technology Data Exchange (ETDEWEB)

    Bollanti, S.; Di Lazzaro, P.; Murra, D. [ENEA, Centro Ricerche Frascati, Frascati, RM (Italy). Div. Fisica Applicata; Imparato, A.; Privato, C. [ENEA, Centro Ricerche Portici, Naples (Italy). Div. Fonti Rinnovabili; Carluccio, R.; Fortunato, G.; Mariucci, L.; Pecora, A. [CNR Istituto di Elettronica dello Stato Solido, Rome (Italy)

    2000-07-01

    The final goal of the Project FOTO is the construction of a laboratory in a clean room for the production of active matrix which can be used to obtain Active Matrix Liquid Crystal Displays (AMLCD). The AMLCD are based on Thin Film Transistors (TFT), which can be obtained by poly-silicon (poly-Si) thin films, achieved, e.g., by irradiating films of amorphous silicon (a-Si) by ultraviolet laser radiation. In this report, are presented the results of the a-Si irradiation by using the laser-facility Hercules (excimer XeCl, l=0,308 mm) done at the ENEA Frascati Centre. The transformation of a-Si into poly-Si is commented upon the variation of the space-time characteristics of the laser pulses, of the irradiation conditions and of the characteristics of the irradiated a-Si films. [Italian] Il macro-obiettivo del Progetto FOTO e' la realizzazione di un laboratorio in camera pulita per lo sviluppo di processi atti a fabbricare matrici attive utilizzabili per ottenere schermi piatti a cristalli liquidi (AMLCD, Active Matrix Liquid Crystal Display). Uno dei primi passi del processo consiste nel creare transistori a film sottile (TFT, Thin Film Transistor). A tal fine, e' necessario ottenere strati sottili di Silicio policristallino irragiando films di silicio amorfo con luce laser ultravioletta. In questo rapporto, sono presentati i risultati degli irraggiamenti di film sottili di silicio amorfo tramite la laser-facility Hercules (eccimero XeCl, l=0,308 mm) effettuati presso il C.R. ENEA di Frascati. La trasformazione di silicio amorfo in silicio policristallino cosi' ottenuta e' commentata al variare delle caratteristiche spazio-temporali dell'impulso laser, delle condizioni di irraggiamento e delle caratteristiche del film di silicio amorfo irraggiato.

  7. Development of Amorphous/Microcrystalline Silicon Tandem Thin-Film Solar Modules with Low Output Voltage, High Energy Yield, Low Light-Induced Degradation, and High Damp-Heat Reliability

    OpenAIRE

    Chin-Yi Tsai; Chin-Yao Tsai

    2014-01-01

    In this work, tandem amorphous/microcrystalline silicon thin-film solar modules with low output voltage, high energy yield, low light-induced degradation, and high damp-heat reliability were successfully designed and developed. Several key technologies of passivation, transparent-conducting-oxide films, and cell and segment laser scribing were researched, developed, and introduced into the production line to enhance the performance of these low-voltage modules. A 900 kWp photovoltaic system w...

  8. A comparison of fill factor and recombination losses in amorphous silicon solar cells on ZnO and SnO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Alkaya, A.; Canbolat, H. [Department of Electrical-Electronics Engineering, University of Mersin, Ciftlikkoy Campus, 33343 Mersin (Turkey); Kaplan, R. [Department of Secondary Science and Mathematics Education, University of Mersin, Yenisehir Campus, 33169 Mersin (Turkey); Hegedus, S.S. [Institute of Energy Conversion, University of Delaware, Newark, DE 19716 (United States)

    2009-06-15

    Effects of ZnO and SnO{sub 2} TCO (Transparent Conductive Oxide) substrate materials on hydrogenated amorphous silicon (a-Si:H) p-i-n solar cell performances and recombination kinetics have been investigated. DC and Frequency-resolved photocurrent measurements in a-Si:H p-i-n solar cells of 6 have been carried out experimentally. In particular, the I-V characteristics in the dark and light, the quantum efficiency spectra, the intensity-, bias voltage- and frequency-dependence of photocurrent were obtained. Fill factor (FF) values were determined from I-V characteristics for both types of substrate cells under various illumination levels. The exponent v in the power-law relationship, I{sub ph} {alpha} G{sup v}, between generating flux density and photocurrent were determined at different bias voltages (DC) and modulation frequencies. High values of V{sub oc} (open-circuit voltage), FF, and DC exponent v for the a-Si:H p-i-n solar cell with SnO{sub 2} were obtained, but the integrated QE (quantum efficiency), the modulated exponent v were found to be low compared to cells prepared on ZnO substrates. Our results show that these parameters are sensitive to the ZnO and SnO{sub 2} substrate materials which act as a window layer allowing most of the incident light to pass into the i-layer of p-i-n cells. (author)

  9. The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation

    International Nuclear Information System (INIS)

    Aleksandrov, O. V.

    2006-01-01

    A model of segregation-induced redistribution of impurities of rare-earth elements during solid-phase epitaxial crystallization of silicon layers amorphized by ion implantation is developed. This model is based on the assumption that a transition layer with a high mobility of atoms is formed at the interphase boundary on the side of a-Si; the thickness of this layer is governed by the diffusion length of vacancies in a-Si. The Er concentration profiles in Si implanted with both erbium and oxygen ions are analyzed in the context of the model. It shown that, in the case of high doses of implantation of rare-earth ions, it is necessary to take into account the formation of R m clusters (m = 4), where R denotes the atom of a rare-earth element, whereas, if oxygen ions are also implanted, formation of the complexes RO n (n = 3-6) should be taken into account; these complexes affect the transition-layer thickness and segregation coefficient

  10. Small-angle x-ray scattering studies of microvoids in amorphous-silicon-based semiconductors. Final subcontract report, 1 February 1991--31 January 1994

    Energy Technology Data Exchange (ETDEWEB)

    Williamson, D.L.; Jone, S.J.; Chen, Y. [Colorado School of Mines, Golden, CO (United States)

    1994-07-01

    This report describes work performed to provide new details of the microstructure for the size scale from about 1 nm to 30 nm in high-quality hydrogenated amorphous-silicon and related alloys prepared by current state-of-the-art deposition methods as well as by new and emerging deposition technologies. The purpose of this work is to help determine the role of microvoids and other density fluctuations in controlling the opto-electronic and photovoltaic properties. The approach involved collaboration with several groups that supplied relevant systematic sets of samples and the associated opto-electronic/photovoltaic data to help address particular issues. The small-angle X-ray scattering (SAXS) technique, as developed during this project, was able to provide microstructural information with a high degree of sensitivity not available from other methods. It is particularly sensitive to microvoids or H-rich microdomains and to the presence of oriented microstructures. The latter is readily associated with columnar-type growth and can even be observed in premature stages not detectable by transmission electron microscopy. Flotation density measurements provided important complementary data. Systematic correlations demonstrated that material with more SAXS-detected microstructure has to-electronic and photovoltaic properties and increased degradation under light soaking. New results related to alloy randomness emerged from our ability to measure the difffuse scattering component of the SAXS.

  11. Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)

    Energy Technology Data Exchange (ETDEWEB)

    Conde, J.C., E-mail: jconde@uvigo.e [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Martin, E. [Dpto. de Mecanica, Maquinas y Motores Termicos y Fluidos, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Gontad, F.; Chiussi, S. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain); Fornarini, L. [Enea-Frascati, Via Enrico Fermi 45, I-00044 Frascati (Roma) (Italy); Leon, B. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, E-36310 Vigo (Spain)

    2010-02-26

    A Finite Element Method (FEM) study of the coupled thermal-stress during the heteroepitaxial growth induced by excimer laser radiation of patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bi-layers deposited on a Si(100) wafer is presented. The ArF (193 nm) excimer laser provides high energy densities during very short laser pulse (20 ns) provoking, at the same time, melting and solidification phenomena in the range of several tenths of nanoseconds. These phenomena play an important role during the growth of heteroepitaxial SiGe structures characterized by high Ge concentration buried under a Si rich surface. In addition, the thermal-stresses that appear before the melting and after the solidification processes can also affect to the epitaxial growth of high quality SiGe alloys in these patterned structures and, in consequence, it is necessary to predict their effects. The aim of this work is to estimate the energy threshold and the corresponding thermal-stresses in the interfaces and the borders of these patterned structures.

  12. Numerical analysis of temperature profile and thermal-stress during excimer laser induced heteroepitaxial growth of patterned amorphous silicon and germanium bi-layers deposited on Si(100)

    International Nuclear Information System (INIS)

    Conde, J.C.; Martin, E.; Gontad, F.; Chiussi, S.; Fornarini, L.; Leon, B.

    2010-01-01

    A Finite Element Method (FEM) study of the coupled thermal-stress during the heteroepitaxial growth induced by excimer laser radiation of patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bi-layers deposited on a Si(100) wafer is presented. The ArF (193 nm) excimer laser provides high energy densities during very short laser pulse (20 ns) provoking, at the same time, melting and solidification phenomena in the range of several tenths of nanoseconds. These phenomena play an important role during the growth of heteroepitaxial SiGe structures characterized by high Ge concentration buried under a Si rich surface. In addition, the thermal-stresses that appear before the melting and after the solidification processes can also affect to the epitaxial growth of high quality SiGe alloys in these patterned structures and, in consequence, it is necessary to predict their effects. The aim of this work is to estimate the energy threshold and the corresponding thermal-stresses in the interfaces and the borders of these patterned structures.

  13. Atomistic Models of Amorphous Semiconductors

    NARCIS (Netherlands)

    Jarolimek, K.

    2011-01-01

    Crystalline silicon is probably the best studied material, widely used by the semiconductor industry. The subject of this thesis is an intriguing form of this element namely amorphous silicon. It can contain a varying amount of hydrogen and is denoted as a-Si:H. It completely lacks the neat long

  14. Conception and modelling of photo-detection pixels. PIN photodiodes conceived in amorphous silicon for particles detection

    International Nuclear Information System (INIS)

    Negru, R.

    2008-06-01

    The research done has revealed that the a-Si:H is a material ideally suited for the detection of particles, while being resistant to radiation. It also has a low manufacturing cost, is compatible with existing technology and can be deposited over large areas. Thus, despite the low local mobility of charges (30 cm 2 /V/s), a-Si:H is a material of particular interest for manufacturing high-energy particle detection pixels. As a consequence of this, we have studied the feasibility of an experimental pixel stacked structure based on a-Si:H as a basic sensor element for an electromagnetic calorimeter. The structure of such a pixel consists of different components. First, a silicon PIN diode in a-Si:H is fabricated, followed by a bias resistor and a decoupling capacitor. Before such a structure is made and in order to optimize its design, it is essential to have an efficient behavioural model of the various components. Thus, our primary goal was to develop a two-dimensional physical model of the PIN diode using the SILVACO finite element calculation software. This a-Si:H PIN diode two-dimensional physical model allowed us to study the problem of crosstalk between pixels in a matrix structure of detectors. In particular, we concentrated on the leakage current and the current generated in the volume between neighbouring pixels. The successful implementation of this model in SPICE ensures its usefulness in other professional simulators and especially its integration into a complete electronic structure (PIN diode, bias resistor, decoupling capacity and low noise amplifier). Thanks to these modelling tools, we were able to simulate PIN diode structures in a-Si:H with different thicknesses and different dimensions. These simulations have allowed us to predict that the thicker structures are relevant to the design of the pixel detectors for high energy physics. Applications in astronomy, medical imaging and the analysis of the failure of silicon integrated circuits, can also

  15. Volume CT with a flat-panel detector on a mobile, isocentric C-arm: pre-clinical investigation in guidance of minimally invasive surgery.

    Science.gov (United States)

    Siewerdsen, J H; Moseley, D J; Burch, S; Bisland, S K; Bogaards, A; Wilson, B C; Jaffray, D A

    2005-01-01

    A mobile isocentric C-arm (Siemens PowerMobil) has been modified in our laboratory to include a large area flat-panel detector (in place of the x-ray image intensifier), providing multi-mode fluoroscopy and cone-beam computed tomography (CT) imaging capability. This platform represents a promising technology for minimally invasive, image-guided surgical procedures where precision in the placement of interventional tools with respect to bony and soft-tissue structures is critical. The image quality and performance in surgical guidance was investigated in pre-clinical evaluation in image-guided spinal surgery. The control, acquisition, and reconstruction system are described. The reproducibility of geometric calibration, essential to achieving high three-dimensional (3D) image quality, is tested over extended time scales (7 months) and across a broad range in C-arm angulation (up to 45 degrees), quantifying the effect of improper calibration on spatial resolution, soft-tissue visibility, and image artifacts. Phantom studies were performed to investigate the precision of 3D localization (viz., fiber optic probes within a vertebral body) and effect of lateral projection truncation (limited field of view) on soft-tissue detectability in image reconstructions. Pre-clinical investigation was undertaken in a specific spinal procedure (photodynamic therapy of spinal metastases) in five animal subjects (pigs). In each procedure, placement of fiber optic catheters in two vertebrae (L1 and L2) was guided by fluoroscopy and cone-beam CT. Experience across five procedures is reported, focusing on 3D image quality, the effects of respiratory motion, limited field of view, reconstruction filter, and imaging dose. Overall, the intraoperative cone-beam CT images were sufficient for guidance of needles and catheters with respect to bony anatomy and improved surgical performance and confidence through 3D visualization and verification of transpedicular trajectories and tool placement

  16. Performance evaluation of a direct-conversion flat-panel detector system in imaging and quality assurance for a high-dose-rate 192Ir source

    Science.gov (United States)

    Miyahara, Yoshinori; Hara, Yuki; Nakashima, Hiroto; Nishimura, Tomonori; Itakura, Kanae; Inomata, Taisuke; Kitagaki, Hajime

    2018-03-01

    In high-dose-rate (HDR) brachytherapy, a direct-conversion flat-panel detector (d-FPD) clearly depicts a 192Ir source without image halation, even under the emission of high-energy gamma rays. However, it was unknown why iridium is visible when using a d-FPD. The purpose of this study was to clarify the reasons for visibility of the source core based on physical imaging characteristics, including the modulation transfer functions (MTF), noise power spectral (NPS), contrast transfer functions, and linearity of d-FPD to high-energy gamma rays. The acquired data included: x-rays, [X]; gamma rays, [γ] dual rays (X  +  γ), [D], and subtracted data for depicting the source ([D]  -  [γ]). In the quality assurance (QA) test for the positional accuracy of a source core, the coordinates of each dwelling point were compared between the planned and actual source core positions using a CT/MR-compatible ovoid applicator and a Fletcher-Williamson applicator. The profile curves of [X] and ([D]  -  [γ]) matched well on MTF and NPS. The contrast resolutions of [D] and [X] were equivalent. A strongly positive linear correlation was found between the output data of [γ] and source strength (r 2  >  0.99). With regard to the accuracy of the source core position, the largest coordinate difference (3D distance) was noted at the maximum curvature of the CT/MR-compatible ovoid and Fletcher-Williamson applicators, showing 1.74  ±  0.02 mm and 1.01  ±  0.01 mm, respectively. A d-FPD system provides high-quality images of a source, even when high-energy gamma rays are emitted to the detector, and positional accuracy tests with clinical applicators are useful in identifying source positions (source movements) within the applicator for QA.

  17. An investigation of signal performance enhancements achieved through innovative pixel design across several generations of indirect detection, active matrix, flat-panel arrays

    International Nuclear Information System (INIS)

    Antonuk, Larry E.; Zhao Qihua; El-Mohri, Youcef; Du Hong; Wang Yi; Street, Robert A.; Ho, Jackson; Weisfield, Richard; Yao, William

    2009-01-01

    Active matrix flat-panel imager (AMFPI) technology is being employed for an increasing variety of imaging applications. An important element in the adoption of this technology has been significant ongoing improvements in optical signal collection achieved through innovations in indirect detection array pixel design. Such improvements have a particularly beneficial effect on performance in applications involving low exposures and/or high spatial frequencies, where detective quantum efficiency is strongly reduced due to the relatively high level of additive electronic noise compared to signal levels of AMFPI devices. In this article, an examination of various signal properties, as determined through measurements and calculations related to novel array designs, is reported in the context of the evolution of AMFPI pixel design. For these studies, dark, optical, and radiation signal measurements were performed on prototype imagers incorporating a variety of increasingly sophisticated array designs, with pixel pitches ranging from 75 to 127 μm. For each design, detailed measurements of fundamental pixel-level properties conducted under radiographic and fluoroscopic operating conditions are reported and the results are compared. A series of 127 μm pitch arrays employing discrete photodiodes culminated in a novel design providing an optical fill factor of ∼80% (thereby assuring improved x-ray sensitivity), and demonstrating low dark current, very low charge trapping and charge release, and a large range of linear signal response. In two of the designs having 75 and 90 μm pitches, a novel continuous photodiode structure was found to provide fill factors that approach the theoretical maximum of 100%. Both sets of novel designs achieved large fill factors by employing architectures in which some, or all of the photodiode structure was elevated above the plane of the pixel addressing transistor. Generally, enhancement of the fill factor in either discrete or continuous

  18. Performance evaluation of a direct-conversion flat-panel detector system in imaging and quality assurance for a high-dose-rate 192Ir source.

    Science.gov (United States)

    Miyahara, Yoshinori; Hara, Yuki; Nakashima, Hiroto; Nishimura, Tomonori; Itakura, Kanae; Inomata, Taisuke; Kitagaki, Hajime

    2018-03-08

    In high-dose-rate (HDR) brachytherapy, a direct-conversion flat-panel detector (d-FPD) clearly depicts a 192 Ir source without image halation, even under the emission of high-energy gamma rays. However, it was unknown why iridium is visible when using a d-FPD. The purpose of this study was to clarify the reasons for visibility of the source core based on physical imaging characteristics, including the modulation transfer functions (MTF), noise power spectral (NPS), contrast transfer functions, and linearity of d-FPD to high-energy gamma rays. The acquired data included: x-rays, [X]; gamma rays, [γ]; dual rays (X  +  γ), [D], and subtracted data for depicting the source ([D]  -  [γ]). In the quality assurance (QA) test for the positional accuracy of a source core, the coordinates of each dwelling point were compared between the planned and actual source core positions using a CT/MR-compatible ovoid applicator and a Fletcher-Williamson applicator. The profile curves of [X] and ([D]  -  [γ]) matched well on MTF and NPS. The contrast resolutions of [D] and [X] were equivalent. A strongly positive linear correlation was found between the output data of [γ] and source strength (r 2   >  0.99). With regard to the accuracy of the source core position, the largest coordinate difference (3D distance) was noted at the maximum curvature of the CT/MR-compatible ovoid and Fletcher-Williamson applicators, showing 1.74  ±  0.02 mm and 1.01  ±  0.01 mm, respectively. A d-FPD system provides high-quality images of a source, even when high-energy gamma rays are emitted to the detector, and positional accuracy tests with clinical applicators are useful in identifying source positions (source movements) within the applicator for QA.

  19. Usefulness of direct-conversion flat-panel detector system as a quality assurance tool for high-dose-rate 192Ir source.

    Science.gov (United States)

    Miyahara, Yoshinori; Kitagaki, Hajime; Nishimura, Tomonori; Itakura, Kanae; Takahashi, Shinobu; Yokokawa, Masaki; Uchida, Nobue; Inomata, Taisuke

    2015-01-08

    The routine quality assurance (QA) procedure for a high-dose-rate (HDR) 192Ir radioactive source is an important task to provide appropriate brachytherapy. Traditionally, it has been difficult to obtain good quality images using the 192Ir source due to irradiation from the high-energy gamma rays. However, a direct-conversion flat-panel detector (d-FPD) has made it possible to confirm the localization and configuration of the 192Ir source. The purpose of the present study was to evaluate positional and temporal accuracy of the 192Ir source using a d-FPD system, and the usefulness of d-FPD as a QA tool. As a weekly verification of source positional accuracy test, we obtained 192Ir core imaging by single-shot radiography for three different positions (1300/1400/1500 mm) of a check ruler. To acquire images for measurement of the 192Ir source movement distance with varying interval steps (2.5/5.0/10.0 mm) and temporal accuracy, we used the high-speed image acquisition technique and digital subtraction. For accuracy of the 192Ir source dwell time, sequential images were obtained using various dwell times ranging from 0.5 to 30.0 sec, and the acquired number of image frames was assessed. Analysis of the data was performed using the measurement analysis function of the d-FPD system. Although there were slight weekly variations in source positional accuracy, the measured positional errors were less than 1.0 mm. For source temporal accuracy, the temporal errors were less than 1.0%, and the correlation between acquired frames and programmed time showed excellent linearity (R2 = 1). All 192Ir core images were acquired clearly without image halation, and the data were obtained quantitatively. All data were successfully stored in the picture archiving and communication system (PACS) for time-series analysis. The d-FPD is considered useful as the QA tool for the 192Ir source.

  20. Study of hydrogenated amorphous silicon devices under intense electric field: application to nuclear detection; Etude de dispositifs electroniques en silicium amorphe hydrogene sous fort champ electrique: application a la detection nucleaire

    Energy Technology Data Exchange (ETDEWEB)

    Ilie, A. [CEA Centre d`Etudes de Saclay, 91 - Gif-sur-Yvette (France). Direction des Technologies Avancees]|[Paris-11 Univ., 91 - Orsay (France)

    1996-12-31

    The goal of this work was the study, development and optimization of hydrogenated amorphous silicon (a-Si:H) devices for use in detection of ionizing radiation. Thick p-i-n devices, capable of withstanding large electric fields (up to 10{sup 6} V/cm) with small currents (nA/cm{sup 2}), were developed. To decrease fabrication time, films were made using the `He diluted` PECVD process and compared to standard a-Si:H films. Aspects connected to specific detector applications as well as to the fundamental physics of a-Si:H were considered: the internal electric field technique, in which the depletion charge was measured as a function of the applied bias voltage; study of the leakage current of p-i-n devices permitted us to demonstrate different regimes: depletion, field-enhanced thermal generation and electronic injection across the p layer. The effect of the electric field on the thermal generation of the carriers was studied considering the Poole-Frenkel and tunneling mechanisms. A model was developed taking under consideration the statistics of the correlated states and electron-phonon coupling. The results suggest that mechanisms not included in the `standard model` of a Si:h need to be considered, such as defect relaxation, a filed-dependent mobility edge etc...; a new metastable phenomenon, induced by prolonged exposure to a strong electric field, was observed and studied. It is characterized by marked decrease of the leakage current and the detector noise, and increase in the breakdown voltage, as well as an improvement of carrier collection efficiency. This forming process appears to be principally due to an activation of the dopants in the p layer; finally, the capacity of thick p-i-n a Si:H devices to detect ionizing radiation has been evaluated. We show that it is possible, with 20-50 micron thick p-i-n devices, to detect the full spectrum of alpha and beta particles. With an appropriate converter, neutron detection then becomes possible. (author). 137 refs.

  1. FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Conde, J.C., E-mail: jconde@uvigo.es [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Martin, E. [Dpto. Mecanica, Maquinas, Motores Termicos y Fluidos, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Stefanov, S. [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Alpuim, P. [Departamento de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Chiussi, S. [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer nc-Si:H is a material with growing importance for a large-area of nano-electronic, photovoltaic or biomedical devices. Black-Right-Pointing-Pointer UV-ELA technique causes a rapid heating that provokes the H{sub 2} desorption from the Si surface and bulk material. Black-Right-Pointing-Pointer Next, diffusion of P doped nc-Si films and eventually, for high energy densities would be possible to reach the melting point. Black-Right-Pointing-Pointer These multilayer structures consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) films deposited on SiO{sub 2}. Black-Right-Pointing-Pointer To optimize parameters involved in this processing, FEM numerical analysis of multilayer structures have been performed. Black-Right-Pointing-Pointer The numerical results are compared with exhaustive characterization of the experimental results. - Abstract: UV excimer laser annealing (UV-ELA) is an alternative annealing process that, during the last few years, has gained enormous importance for the CMOS nano-electronic technologies, with the ability to provide films and alloys with electrical and optical properties to fit the desired device performance. The UV-ELA of amorphous (a-) and/or doped nano-crystalline (nc-) silicon films is based on the rapid (nanoseconds) formation of temperature profiles caused by laser radiation that is absorbed in the material and lead to crystallisation, diffusion in solid or even in liquid phase. To achieve the desired temperature profiles and to optimize the parameters involved in the processing of hydrogenated nanocrystalline silicon (nc-Si:H) films with the UV-ELA, a numerical analysis by finite element method (FEM) of a multilayer structure has been performed. The multilayer structures, consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) layers, deposited on a glass substrate, has also been experimentally analyzed. Temperature profiles caused by 193 nm radiation with 25

  2. On the use of a charged tunnel layer as a hole collector to improve the efficiency of amorphous silicon thin-film solar cells

    Science.gov (United States)

    Ke, Cangming; Peters, Ian Marius; Sahraei, Nasim; Aberle, Armin G.; Stangl, Rolf

    2015-06-01

    A new concept, using a negatively charged tunnel layer as a hole collector, is proposed and theoretically investigated for application in amorphous silicon thin-film solar cells. The concept features a glass/transparent conductive oxide/ultra-thin negatively charged tunnel layer/intrinsic a-Si:H/n-doped a-Si:H/metal structure. The key feature of this so called t+-i-n structure is the introduction of a negatively charged tunnel layer (attracting holes from the intrinsic absorber layer), which substitutes the highly recombination active p-doped a-Si:H layer in a conventional p-i-n configuration. Atomic layer deposited aluminum oxide (ALD AlOx) is suggested as a potential candidate for such a tunnel layer. Using typical ALD AlOx parameters, a 27% relative efficiency increase (i.e., from 9.7% to 12.3%) is predicted theoretically for a single-junction a-Si:H solar cell on a textured superstrate. This prediction is based on parameters that reproduce the experimentally obtained external quantum efficiency and current-voltage characteristics of a conventional processed p-i-n a-Si:H solar cell, reaching 9.7% efficiency and serving as a reference. Subsequently, the p-doped a-Si:H layer is replaced by the tunnel layer (studied by means of numerical device simulation). Using a t+-i-n configuration instead of a conventional p-i-n configuration will not only increase the short-circuit current density (from 14.4 to 14.9 mA/cm2, according to our simulations), it also enhances the open-circuit voltage and the fill factor (from 917 mV to 1.0 V and from 74% to 83%, respectively). For this concept to work efficiently, a high work function front electrode material or a high interface charge is needed.

  3. A comparison of mechanical properties of three MEMS materials - silicon carbide, ultrananocrystalline diamond, and hydrogen-free tetrahedral amorphous carbon (Ta-C)

    Energy Technology Data Exchange (ETDEWEB)

    Carlisle, John A. (Argonne National Laboratory, Argonne, IL); Moldovan, N. (Northwestern University, Evanston, IL); Xiao, Xingcheng (Argonne National Laboratory, Argonne, IL); Zorman, C. A. (Case Western Reserve University, Cleveland, OH); Mancini, D. C. (Argonne National Laboratory, Argonne, IL); Peng, B. (Northwestern University, Evanston, IL); Espinosa, H. D. (Northwestern University, Evanston, IL); Friedmann, Thomas Aquinas; Auciello, Orlando, (Argonne National Laboratory, Argonne, IL)

    2004-06-01

    Many MEMS devices are based on polysilicon because of the current availability of surface micromachining technology. However, polysilicon is not the best choice for devices where extensive sliding and/or thermal fields are applied due to its chemical, mechanical and tribological properties. In this work, we investigated the mechanical properties of three new materials for MEMS/NEMS devices: silicon carbide (SiC) from Case Western Reserve University (CWRU), ultrananocrystalline diamond (UNCD) from Argonne National Laboratory (ANL), and hydrogen-free tetrahedral amorphous carbon (ta-C) from Sandia National Laboratories (SNL). Young's modulus, characteristic strength, fracture toughness, and theoretical strength were measured for these three materials using only one testing methodology - the Membrane Deflection Experiment (MDE) developed at Northwestern University. The measured values of Young's modulus were 430GPa, 960GPa, and 800GPa for SiC, UNCD, and ta-C, repectively. Fracture toughness measurments resulted in values of 3.2, 4.5, and 6.2 MPa x m{sup 1/2}, respectively. The strengths were found to follow a Weibull distribution but their scaling was found to be controlled by different specimen size parameters. Therefore, a cross comparison of the strengths is not fully meaningful. We instead propose to compare their theoretical strengths as determined by employing Novozhilov fracture criterion. The estimated theoretical strength for SiC is 10.6GPa at a characteristic length of 58nm, for UNCD is 18.6GPa at a characteristic length of 37nm, and for ta-C is 25.4GPa at a characteristic length of 38nm. The techniques used to obtained these results as well as microscopic fractographic analyses are summarized in the article. We also highlight the importance of characterizing mechanical properties of MEMS materials by means of only one simple and accurate experimental technique.

  4. Calibration of an EPID to perform pretreatment portal dosimetry in IMRT non-transmission: the algorithm iGRiMLO; Calibracion de un EPID para la realizacion de dosimetria portal pretratamiento de no transmision en IMRT: el algoritmo iGRiMLO

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez, V.; Dolores, V. de los; Martinez, J.; Pastor, V.; Gimeno, J.; Guardino, C.; Crispin, V.

    2011-07-01

    This paper explains the process of calibration of a portal imaging device (EPID) of an amorphous silicon flat panel. This algorithm was programmed iGRiMLO based on an experimental method, where not required convolution operations.

  5. Study on the substrate-induced crystallisation of amorphous SiC-precursor ceramics. TIB/A; Untersuchungen zur substratinduzierten Kristallisation amorpher SiC-Precursorkeramiken

    Energy Technology Data Exchange (ETDEWEB)

    Rau, C.

    2000-12-01

    In the present thesis the crystallization behaviour of amorphous silicon-carbon materials (SiC{sub x}) was studied. The main topic of the experimental studies formed thereby the epitactical crystallization of thin silicon carbide layers on monocrystalline substrates of silicon carbides or silicon. Furthermore by thermolysis of the polymer amorphous SiC{sub x}-powder was obtained.

  6. Development of Tandem Amorphous/Microcrystalline Silicon Thin-Film Large-Area See-Through Color Solar Panels with Reflective Layer and 4-Step Laser Scribing for Building-Integrated Photovoltaic Applications

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar modules were successfully designed and developed for building-integrated photovoltaic applications. Novel and key technologies of reflective layers and 4-step laser scribing were researched, developed, and introduced into the production line to produce solar panels with various colors, such as purple, dark blue, light blue, silver, golden, orange, red wine, and coffee. The highest module power is 105 W and the highest visible light transmittance is near 20%.

  7. Development of Amorphous/Microcrystalline Silicon Tandem Thin-Film Solar Modules with Low Output Voltage, High Energy Yield, Low Light-Induced Degradation, and High Damp-Heat Reliability

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film solar modules with low output voltage, high energy yield, low light-induced degradation, and high damp-heat reliability were successfully designed and developed. Several key technologies of passivation, transparent-conducting-oxide films, and cell and segment laser scribing were researched, developed, and introduced into the production line to enhance the performance of these low-voltage modules. A 900 kWp photovoltaic system with these low-voltage panels was installed and its performance ratio has been simulated and projected to be 92.1%, which is 20% more than the crystalline silicon and CdTe counterparts.

  8. Flat-Panel CT as a new perinterventional imaging modality in aortic stentgraft procedures. Work in progress; Flachdetektor-CT als ergaenzende Untersuchung bei der endoluminalen Behandlung von thorakalen und abdominellen Aortenaneurysmen. Erste klinische Erfahrungen

    Energy Technology Data Exchange (ETDEWEB)

    Rabitsch, E.; Celedin, S.; Kau, T.; Illiasch, H.; Hausegger, K. [Inst. fuer diagnostische und interventionelle Radiologie, LKH Klagenfurt (Austria)

    2008-02-15

    Purpose: to evaluate the value of flat-panel CT (FP-CT) as a new perinterventional imaging modality in aortic stentgraft procedures. Materials and methods: FP-CT was performed in 21 patients (19 males, mean age 77, range 54 to 90) from June 2005 to February 2007 immediately after endovascular treatment of thoracic and abdominal aortic aneurysms on the angiographic table. Nine thoracic aortic aneurysms were treated with Zenith trademark -endoprosthesis. Nine of twelve abdominal aortic aneurysms were treated with Zenith trademark -Endoprosthesis and three with an Excluder trademark -Endoprosthesis. Images were acquired with a rotating C-arm and the following parameters: during an acquisition time of 20 seconds and at a rotation of 217 degrees, 538 projections were acquired. Contrast agent was administered in 14 patients. Images were displayed in MIP, MPR and VRT mode. Results: in all patients the stentgraft was shown exactly and the alignment of the prosthesis along the landing zones was well displayed. The aneurismal sack was well shown in all patients. 1 x an endoleak II was detected, 1 x an angiographically verified endoleak I was not detected. In one patient distal extension was considered due to suspected short stentgraft at the distal neck. Flat-panel CT showed sufficient neck coverage and no extension was inserted. Due to artifacts of the prosthesis, the platinum markers and the guide wire as well as due to pulsation of the aorta, the resolution of detail decreased and reduced the visualization of the alignment. (orig.)

  9. Planarization of amorphous silicon thin film transistors for high-aperture-ratio and large-area active-matrix liquid crystal displays

    Science.gov (United States)

    Lan, Je-Hsiung

    The reduction of the backlight power consumption and the improvement of the display image uniformity for future large-area and high-resolution active-matrix liquid- crystal displays (AM-LCDs) are very important. One possible method to achieve the former goal is to increase the pixel electrode aperture-ratio. This can be realized by overlapping the pixel electrode with both gate/data buslines. While for the latter, reduction of the RC-delay by using a low resistance gate metal line is the key. Both of these approaches can be realized by using planarization technology. In this dissertation, the planarization technology based on low dielectric constant organic polymer, benzocyclobutene (BCB), is demonstrated, and this technology has been successfully applied to hydrogenated amorphous-silicon (a-Si:H) thin-film transistor (TFT) arrays and thick metal gate buslines/electrodes. Through the planarization technology, a high-aperture-ratio (HAR) pixel electrode structure has been fabricated. The parasitic capacitance and crosstalk issues in the HAR pixel electrode have been studied through interconnect analysis and circuit simulation. The impact of the parasitic capacitance on display performances, such as feedthrough voltage, vertical crosstalk, pixel electrode aperture-ratio, pixel charging behavior, and gate busline RC-delay issues, has been thoroughly discussed. Some key issues during the process integration of the HAR pixel electrode structure have been addressed. These include the BCB contact via formation, the patterning of the ITO pixel electrodes on BCB layer, the selection of Ar plasma treatment conditions for BCB surface, and the optical transmittance evaluation of the ITO/BCB double-layer structure. In addition, the BCB passivation effects on back-channel etched type a-Si:H TFTs have been investigated. It is found that there is no degradation in the TFT electrical performance and reliability after the BCB passivation. Finally, the planarization technology is

  10. Hydrogen in disordered and amorphous solids

    International Nuclear Information System (INIS)

    Bambakidis, G; Bowman, R.C.

    1986-01-01

    This book presents information on the following topoics: elements of the theory of amorphous semiconductors; electronic structure of alpha-SiH; fluctuation induced gap states in amorphous hydrogenated silicon; hydrogen on semiconductor surfaces; the influence of hydrogen on the defects and instabilities in hydrogenated amorphous silicon; deuteron magnetic resonance in some amorphous semiconductors; formation of amorphous metals by solid state reactions of hydrogen with an intermetallic compound; NMR studies of the hydrides of disordered and amorphous alloys; neutron vibrational spectroscopy of disordered metal-hydrogen system; dynamical disorder of hydrogen in LaNi /SUB 5-y/ M /SUB y/ hydrides studied by quasi-elastic neutron scattering; recent studies of intermetallic hydrides; tritium in Pd and Pd /SUB 0.80/ Sg /SUB 0.20/ ; and determination of hydrogen concentration in thin films of absorbing materials

  11. Research and development of photovoltaic power system. Study on growth mechanism of a-Si:H and preparation of the stable, high quality films; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon no seimaku kiko to kohinshitsuka

    Energy Technology Data Exchange (ETDEWEB)

    Hirose, M. [Hiroshima University, Hiroshima (Japan). Faculty of Engineering

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on a film forming mechanism for amorphous silicon for solar cells and its quality improvement. In in-situ observation on plasma CVD surface reaction by using the total reflection infrared absorbing spectroscopy, an observation on a real time basis was performed on the reaction process of an a-Si:H surface in contact with gas mixture plasma composed of SiH4 + CH4. In microscopic observation on initial processes of amorphous silicon growth, surface morphological change before and after a-Si:H deposition at 200{degree}C was observed by using an inter-atomic force microscope. The observation verified that a-Si:H has grown to an atomic layer. In research on defect density in a-Si:H fabricated under high-speed film forming conditions, analysis was made on correlation between the film forming speed at 250{degree}C and defect density in the film. Other research works include those on a high-quality a-SiGe:H film fabricated by using the nanometer film forming/hydrogen plasma annealing method, modulated doping into multi-layer films of a-Si:H/a-Ge:H, and thin film transistor using very thin multi layer films of a-Si:H/a-Ge:H. 5 refs., 12 figs.

  12. Amorphous magnetism

    International Nuclear Information System (INIS)

    Rechenberg, H.R.

    1984-01-01

    The consequences of disorder on magnetic properties of solids are examined. In this context the word 'disorder' is not synonimous of structural amorphicity; chemical disorder can be achieved e.g. by randomly diffusing magnetic atoms on a nonmagnetic crystalline lattice. The name Amorphous Magnetism must be taken in a broad sense. (Author) [pt

  13. The physics and applications of amorphous semiconductors

    CERN Document Server

    Madan, Arun

    1988-01-01

    This comprehensive, detailed treatise on the physics and applications of the new emerging technology of amorphous semiconductors focuses on specific device research problems such as the optimization of device performance. The first part of the book presents hydrogenated amorphous silicon type alloys, whose applications include inexpensive solar cells, thin film transistors, image scanners, electrophotography, optical recording and gas sensors. The second part of the book discusses amorphous chalcogenides, whose applications include electrophotography, switching, and memory elements. This boo

  14. Amorphous Semiconductor Alloys

    Science.gov (United States)

    Madan, Arun

    1985-08-01

    Amorphous silicon (a-Si) based alloys have attracted a considerable amount of interest because of their applications in a wide variety of technologies. However, the major effort has concentrated on inexpensive photovoltaic device applications and has moved from a laboratory curiosity in the early 1970's to viable commercial applications in the 1980's. Impressive progress in this field has been made since the group at University of Dundee demonstrated that a low defect, device quality hydrogenated amorphous silicon (a-Si:H) 12 material could be produced using the radio frequency (r.f.) glow discharge in SiH4 gas ' and that the material could be doped n- and p-type.3 These results spurred a worldwide interest in a-Si based alloys, especially for photovoltaic devices which has resulted in a conversion efficiency approaching 12%. There is now a quest for even higher conversion efficiencies by using the multijunction cell approach. This necessitates the synthesis of new materials of differing bandgaps, which in principle amorphous semiconductors can achieve. In this article, we review some of this work and consider from a device and a materials point of view the hurdles which have to be overcome before this type of concept can be realized.

  15. Amorphous silicon germanium carbide photo sensitive bipolar junction transistor with a base-contact and a continuous tunable high current gain

    Energy Technology Data Exchan