WorldWideScience

Sample records for amorphous silicon flat-panel

  1. Investigation of an amorphous silicon flat-panel detector for ion radiography

    OpenAIRE

    Telsemeyer, Julia

    2012-01-01

    Using heavy ions in radiotherapy offers a good potential for targeted radiation of tumors and the ability to spare healthy tissue. Their characteristic interaction with matter holds the potential to employ ions for high-contrast radiographic imaging at a decreased dose in comparison to conventional X-ray imaging; however, it lacks simple detectors suitable for this purpose. In this study the performance of an amorphous silicon flat-panel detector, originally designed for photon imaging, was i...

  2. Performance of a 41x41 cm2 amorphous silicon flat panel x-ray detector designed for angiographic and R and F imaging applications

    International Nuclear Information System (INIS)

    We measured the physical imaging performance of a 41x41 cm2 amorphous silicon flat panel detector designed for angiographic and R and F imaging applications using methods from the emerging IEC standard for the measurement of detective quantum efficiency (DQE) in digital radiographic detectors. Measurements on 12 production detectors demonstrate consistent performance. The mean DQE at the detector center is about 0.77 at zero frequency and 0.27 at the Nyquist frequency (2.5 cycles/mm) when measured with a 7 mm of Al HVL spectrum at about 3.6 μGy. The mean MTF at the center of the detector for this spectrum is 0.24 at the Nyquist frequency. For radiographic operation all 2048x2048 detector elements are read out individually. For fluoroscopy, the detector operates in two 30 frame per second modes: either the center 1024x1024 detector elements are read out or the entire detector is read out with 2x2 pixel binning. A model was developed to predict differences in performance between the modes, and measurements demonstrate agreement with the model. Lag was measured using a quasi-equilibrium exposure method and was found to be 0.044 in the first frame and less than 0.007 after 1 s. We demonstrated that it is possible to use the lag data to correct for temporal correlation in images when measuring DQE with a fluoroscopic imaging technique. Measurements as a function of position on the detector demonstrate a high degree of uniformity. We also characterized dependences on spectrum, exposure level, and direction. Finally, we measured the DQE of a current state of the art image intensifier/CCD system using the same method as for the flat panel. We found the image intensifier system to have lower DQE than the flat panel at high exposure levels and approximately equivalent DQE at fluoroscopic levels

  3. Should 3K zoom function be used for detection of pneumothorax in cesium iodide/amorphous silicon flat-panel detector radiographs presented on 1K-matrix soft copies?

    International Nuclear Information System (INIS)

    The purpose of the study was to evaluate observer performance in the detection of pneumothorax with cesium iodide and amorphous silicon flat-panel detector radiography (CsI/a-Si FDR) presented as 1K and 3K soft-copy images. Forty patients with and 40 patients without pneumothorax diagnosed on previous and subsequent digital storage phosphor radiography (SPR, gold standard) had follow-up chest radiographs with CsI/a-Si FDR. Four observers confirmed or excluded the diagnosis of pneumothorax according to a five-point scale first on the 1K soft-copy image and then with help of 3K zoom function (1K monitor). Receiver operating characteristic (ROC) analysis was performed for each modality (1K and 3K). The area under the curve (AUC) values for each observer were 0.7815, 0.7779, 0.7946 and 0.7066 with 1K-matrix soft copies and 0.8123, 0.7997, 0.8078 and 0.7522 with 3K zoom. Overall detection of pneumothorax was better with 3K zoom. Differences between the two display methods were not statistically significant in 3 of 4 observers (p-values between 0.13 and 0.44; observer 4: p=0.02). The detection of pneumothorax with 3K zoom is better than with 1K soft copy but not at a statistically significant level. Differences between both display methods may be subtle. Still, our results indicate that 3K zoom should be employed in clinical practice. (orig.)

  4. Characterization of an amorphous silicon flat panel for controlling the positioning accuracy of sheet; Caracterizacion de un panel plano de silicio amorfo para control de la exactitud en el posicionamiento de laminas

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, J.; Gonzalez, V.; Gimeno, J.; Dolores, V. de los; Pastor, V.; Crispin, V.; Guardino, C.

    2011-07-01

    It has established a method for measuring the position of the blades in a multi leaf collimator (MLC) used to measure dose portal imaging device (EPID) of amorphous silicon, and verified its accuracy using radiochromic films and measures water with diode Cuba, techniques perfectly well validated in our institution. This dose profiles are studied for each sheet and determine their position at the point which has 50% of the dose in the open field.

  5. Clinical evaluation of digital radiography based on a large-area cesium iodide-amorphous silicon flat-panel detector compared with screen-film radiography for skeletal system and abdomen

    International Nuclear Information System (INIS)

    The aim of this clinical study was to compare the image quality of digital radiography using the new digital Bucky system based on a flat-panel detector with that of a conventional screen-film system for the skeletal structure and the abdomen. Fifty patients were examined using digital radiography with a flat-panel detector and screen-film systems, 25 for the skeletal structures and 25 for the abdomen. Six radiologists judged each paired image acquired under the same exposure parameters concerning three observation items for the bone and six items for the abdomen. Digital radiographic images for the bone were evaluated to be similar to screen-film images at the mean of 42.2%, to be superior at 50.2%, and to be inferior at 7.6%. Digital radiographic images for the abdomen were judged to be similar to screen-film images at the mean of 43.4%, superior at 52.4%, and inferior at 4.2%; thus, digital radiographic images were estimated to be either similar as or superior to screen-film images at over 92% for the bone and abdomen. On the statistical analysis, digital radiographic images were also judged to be preferred significantly in the most items for the bone and abdomen. In conclusion, the image quality of digital radiography with a flat-panel detector was superior to that of a screen-film system under the same exposure parameters, suggesting that dose reduction is possible with digital radiography. (orig.)

  6. Amorphous and Polycrystalline Photoconductors for Direct Conversion Flat Panel X-Ray Image Sensors

    Directory of Open Access Journals (Sweden)

    Karim S. Karim

    2011-05-01

    Full Text Available In the last ten to fifteen years there has been much research in using amorphous and polycrystalline semiconductors as x-ray photoconductors in various x-ray image sensor applications, most notably in flat panel x-ray imagers (FPXIs. We first outline the essential requirements for an ideal large area photoconductor for use in a FPXI, and discuss how some of the current amorphous and polycrystalline semiconductors fulfill these requirements. At present, only stabilized amorphous selenium (doped and alloyed a-Se has been commercialized, and FPXIs based on a-Se are particularly suitable for mammography, operating at the ideal limit of high detective quantum efficiency (DQE. Further, these FPXIs can also be used in real-time, and have already been used in such applications as tomosynthesis. We discuss some of the important attributes of amorphous and polycrystalline x-ray photoconductors such as their large area deposition ability, charge collection efficiency, x-ray sensitivity, DQE, modulation transfer function (MTF and the importance of the dark current. We show the importance of charge trapping in limiting not only the sensitivity but also the resolution of these detectors. Limitations on the maximum acceptable dark current and the corresponding charge collection efficiency jointly impose a practical constraint that many photoconductors fail to satisfy. We discuss the case of a-Se in which the dark current was brought down by three orders of magnitude by the use of special blocking layers to satisfy the dark current constraint. There are also a number of polycrystalline photoconductors, HgI2 and PbO being good examples, that show potential for commercialization in the same way that multilayer stabilized a-Se x-ray photoconductors were developed for commercial applications. We highlight the unique nature of avalanche multiplication in a-Se and how it has led to the development of the commercial HARP video-tube. An all solid state version of the

  7. Embedded nonvolatile memory devices with various silicon nitride energy band gaps on glass used for flat panel display applications

    International Nuclear Information System (INIS)

    Nonvolatile memory (NVM) devices with a nitride–nitride–oxynitride stack structure on a rough poly-silicon (poly-Si) surface were fabricated using a low-temperature poly-Si (LTPS) thin film transistor technology on glass substrates for application of flat panel display (FPD). The plasma-assisted oxidation/nitridation method is used to form a uniform oxynitride with an ultrathin tunneling layer on a rough LTPS surface. The NVMs, using a Si-rich silicon nitride film as a charge-trapping layer, were proposed as one of the solutions for the improvement of device performance such as the program/erase speed, the memory window and the charge retention characteristics. To further improve the vertical scaling and charge retention characteristics of NVM devices, the high-κ high-density N-rich SiNx films are used as a blocking layer. The fabricated NVM devices have outstanding electrical properties, such as a low threshold voltage, a high ON/OFF current ratio, a low subthreshold swing, a low operating voltage of less than ±9 V and a large memory window of 3.7 V, which remained about 1.9 V over a period of 10 years. These characteristics are suitable for electrical switching and data storage with in FPD application

  8. Development of flat panel digital radiography system

    International Nuclear Information System (INIS)

    We developed the Digital Radiography System CXDI-11 which digitizes the X-ray image in high quality by using a self-developed flat panel detector. The CXDI-11 has a large image area of 43 cm x 43 cm (17'' x 17''), and it can display the image on the pre-view monitor after only 3 seconds of exposure. In this report, we present the principle and the physical characteristics of the CXDI-11. The X-ray detector installed in the CXDI-11 is a combination of a rare-earth scintillator and an amorphous silicon flat panel detector (LANMIT). The X-ray is converted to the visible fluorescent light at the scintillator and the light is detected by the LANMIT. The image-processed data is transferred to the DICOM3.0 conformed devices such as the diagnosis work station, the archiver and the laser imager through the network. We also show some measurement results of the dynamic range, the pre-sampling Modulation Transfer Function and the tube voltage dependent sensitivity. The CXDI-11 is superior in real time operation and image quality, thus it is the digital radiography system of the next generation. (author)

  9. Quantitative comparison using generalized relative object detectability (G-ROD) metrics of an amorphous selenium detector with high resolution microangiographic fluoroscopes (MAF) and standard flat panel detectors (FPD)

    Science.gov (United States)

    Russ, M.; Shankar, A.; Jain, A.; Setlur Nagesh, S. V.; Ionita, C. N.; Scott, C.; Karim, K. S.; Bednarek, D. R.; Rudin, S.

    2016-03-01

    A novel amorphous selenium (a-Se) direct detector with CMOS readout has been designed, and relative detector performance investigated. The detector features include a 25μm pixel pitch, and 1000μm thick a-Se layer operating at 10V/μm bias field. A simulated detector DQE was determined, and used in comparative calculations of the Relative Object Detectability (ROD) family of prewhitening matched-filter (PWMF) observer and non-pre-whitening matched filter (NPWMF) observer model metrics to gauge a-Se detector performance against existing high resolution micro-angiographic fluoroscopic (MAF) detectors and a standard flat panel detector (FPD). The PWMF-ROD or ROD metric compares two x-ray imaging detectors in their relative abilities in imaging a given object by taking the integral over spatial frequencies of the Fourier transform of the detector DQE weighted by an object function, divided by the comparable integral for a different detector. The generalized-ROD (G-ROD) metric incorporates clinically relevant parameters (focal- spot size, magnification, and scatter) to show the degradation in imaging performance for detectors that are part of an imaging chain. Preliminary ROD calculations using simulated spheres as the object predicted superior imaging performance by the a-Se detector as compared to existing detectors. New PWMF-G-ROD and NPWMF-G-ROD results still indicate better performance by the a-Se detector in an imaging chain over all sphere sizes for various focal spot sizes and magnifications, although a-Se performance advantages were degraded by focal spot blurring. Nevertheless, the a-Se technology has great potential to provide break- through abilities such as visualization of fine details including of neuro-vascular perforator vessels and of small vascular devices.

  10. TU-F-18C-02: Increasing Amorphous Selenium Thickness in Direct Conversion Flat-Panel Imagers for Contrast-Enhanced Dual-Energy Breast Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Scaduto, DA; Hu, Y-H; Zhao, W [Stony Brook University, Stony Brook, NY (United States)

    2014-06-15

    Purpose: Contrast-enhanced (CE) breast imaging using iodinated contrast agents requires imaging with x-ray spectra at energies greater than those used in mammography. Optimizing amorphous selenium (a-Se) flat panel imagers (FPI) for this higher energy range may increase lesion conspicuity. Methods: We compare imaging performance of a conventional FPI with 200 μm a-Se conversion layer to a prototype FPI with 300 μm a-Se layer. Both detectors are evaluated in a Siemens MAMMOMAT Inspiration prototype digital breast tomosynthesis (DBT) system using low-energy (W/Rh 28 kVp) and high-energy (W/Cu 49 kVp) x-ray spectra. Detectability of iodinated lesions in dual-energy images is evaluated using an iodine contrast phantom. Effects of beam obliquity are investigated in projection and reconstructed images using different reconstruction methods. The ideal observer signal-to-noise ratio is used as a figure-of-merit to predict the optimal a-Se thickness for CE lesion detectability without compromising conventional full-field digital mammography (FFDM) and DBT performance. Results: Increasing a-Se thickness from 200 μm to 300 μm preserves imaging performance at typical mammographic energies (e.g. W/Rh 28 kVp), and improves the detective quantum efficiency (DQE) for high energy (W/Cu 49 kVp) by 30%. While the more penetrating high-energy x-ray photons increase geometric blur due to beam obliquity in the FPI with thicker a-Se layer, the effect on lesion detectability in FBP reconstructions is negligible due to the reconstruction filters employed. Ideal observer SNR for CE objects shows improvements in in-plane detectability with increasing a-Se thicknesses, though small lesion detectability begins to degrade in oblique projections for a-Se thickness above 500 μm. Conclusion: Increasing a-Se thickness in direct conversion FPI from 200 μm to 300 μm improves lesion detectability in CE breast imaging with virtually no cost to conventional FFDM and DBT. This work was partially

  11. Amorphous silicon based particle detectors

    OpenAIRE

    Wyrsch, N; Franco, A; Riesen, Y.; Despeisse, M; S. Dunand; Powolny, F; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  12. Amorphous Silicon: Flexible Backplane and Display Application

    Science.gov (United States)

    Sarma, Kalluri R.

    Advances in the science and technology of hydrogenated amorphous silicon (a-Si:H, also referred to as a-Si) and the associated devices including thin-film transistors (TFT) during the past three decades have had a profound impact on the development and commercialization of major applications such as thin-film solar cells, digital image scanners and X-ray imagers and active matrix liquid crystal displays (AMLCDs). Particularly, during approximately the past 15 years, a-Si TFT-based flat panel AMLCDs have been a huge commercial success. a-Si TFT-LCD has enabled the note book PCs, and is now rapidly replacing the venerable CRT in the desktop monitor and home TV applications. a-Si TFT-LCD is now the dominant technology in use for applications ranging from small displays such as in mobile phones to large displays such as in home TV, as well-specialized applications such as industrial and avionics displays.

  13. Flat panel display - Impurity doping technology for flat panel displays

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Toshiharu [Advanced Technology Planning, Sumitomo Eaton Nova Corporation, SBS Tower 9F, 10-1, Yoga 4-chome, Setagaya-ku, 158-0097 Tokyo (Japan)]. E-mail: suzuki_tsh@senova.co.jp

    2005-08-01

    Features of the flat panel displays (FPDs) such as liquid crystal display (LCD) and organic light emitting diode (OLED) display, etc. using low temperature poly-Si (LTPS) thin film transistors (TFTs) are briefly reviewed comparing with other FPDs. The requirements for fabricating TFTs used for high performance FPDs and system on glass (SoG) are addressed. This paper focuses on the impurity doping technology, which is one of the key technologies together with crystallization by laser annealing, formation of high quality gate insulator and gate-insulator/poly-Si interface. The issues to be solved in impurity doping technology for state of the art and future TFTs are clarified.

  14. Flat panel display - Impurity doping technology for flat panel displays

    International Nuclear Information System (INIS)

    Features of the flat panel displays (FPDs) such as liquid crystal display (LCD) and organic light emitting diode (OLED) display, etc. using low temperature poly-Si (LTPS) thin film transistors (TFTs) are briefly reviewed comparing with other FPDs. The requirements for fabricating TFTs used for high performance FPDs and system on glass (SoG) are addressed. This paper focuses on the impurity doping technology, which is one of the key technologies together with crystallization by laser annealing, formation of high quality gate insulator and gate-insulator/poly-Si interface. The issues to be solved in impurity doping technology for state of the art and future TFTs are clarified

  15. Flat-panel electronic displays: a triumph of physics, chemistry and engineering.

    Science.gov (United States)

    Hilsum, Cyril

    2010-03-13

    This paper describes the history and science behind the development of modern flat-panel displays, and assesses future trends. Electronic displays are an important feature of modern life. For many years the cathode ray tube, an engineering marvel, was universal, but its shape was cumbersome and its operating voltage too high. The need for a flat-panel display, working at a low voltage, became imperative, and much research has been applied to this need. Any versatile flat-panel display will exploit an electro-optical effect, a transparent conductor and an addressing system to deliver data locally. The first need is to convert an electrical signal into a visible change. Two methods are available, the first giving emission of light, the second modulating ambient illumination. The most useful light-emitting media are semiconductors, historically exploiting III-V or II-VI compounds, but more recently organic or polymer semiconductors. Another possible effect uses gas plasma discharges. The modulating, or subtractive, effects that have been studied include liquid crystals, electrophoresis, electrowetting and electrochromism. A transparent conductor makes it possible to apply a voltage to an extended area while observing the results. The design is a compromise, since the free electrons that carry current also absorb light. The first materials used were metals, but some semiconductors, when heavily doped, give a better balance, with high transmission for a low resistance. Delivering data unambiguously to a million or so picture elements across the display area is no easy task. The preferred solution is an amorphous silicon thin-film transistor deposited at each cross-point in an X-Y matrix. Success in these endeavours has led to many applications for flat-panel displays, including television, flexible displays, electronic paper, electronic books and advertising signs. PMID:20123746

  16. Flat-panel electronic displays: a triumph of physics, chemistry and engineering.

    Science.gov (United States)

    Hilsum, Cyril

    2010-03-13

    This paper describes the history and science behind the development of modern flat-panel displays, and assesses future trends. Electronic displays are an important feature of modern life. For many years the cathode ray tube, an engineering marvel, was universal, but its shape was cumbersome and its operating voltage too high. The need for a flat-panel display, working at a low voltage, became imperative, and much research has been applied to this need. Any versatile flat-panel display will exploit an electro-optical effect, a transparent conductor and an addressing system to deliver data locally. The first need is to convert an electrical signal into a visible change. Two methods are available, the first giving emission of light, the second modulating ambient illumination. The most useful light-emitting media are semiconductors, historically exploiting III-V or II-VI compounds, but more recently organic or polymer semiconductors. Another possible effect uses gas plasma discharges. The modulating, or subtractive, effects that have been studied include liquid crystals, electrophoresis, electrowetting and electrochromism. A transparent conductor makes it possible to apply a voltage to an extended area while observing the results. The design is a compromise, since the free electrons that carry current also absorb light. The first materials used were metals, but some semiconductors, when heavily doped, give a better balance, with high transmission for a low resistance. Delivering data unambiguously to a million or so picture elements across the display area is no easy task. The preferred solution is an amorphous silicon thin-film transistor deposited at each cross-point in an X-Y matrix. Success in these endeavours has led to many applications for flat-panel displays, including television, flexible displays, electronic paper, electronic books and advertising signs.

  17. Simulation in Amorphous Silicon and Amorphous Silicon Carbide Pin Diodes

    OpenAIRE

    Gonçalves, Dora; Fernandes, Miguel; Louro, Paula; Fantoni, Alessandro; Vieira, Manuela

    2014-01-01

    Part 21: Electronics: Devices International audience Photodiodes are devices used as image sensors, reactive to polychromatic light and subsequently color detecting, and they are also used in optical communication applications. To improve these devices performance it is essential to study and control their characteristics, in fact their capacitance and spectral and transient responses. This study considers two types of diodes, an amorphous silicon pin and an amorphous silicon carbide pi...

  18. Laser illuminated flat panel display

    Energy Technology Data Exchange (ETDEWEB)

    Veligdan, J.T.

    1995-12-31

    A 10 inch laser illuminated flat panel Planar Optic Display (POD) screen has been constructed and tested. This POD screen technology is an entirely new concept in display technology. Although the initial display is flat and made of glass, this technology lends itself to applications where a plastic display might be wrapped around the viewer. The display screen is comprised of hundreds of planar optical waveguides where each glass waveguide represents a vertical line of resolution. A black cladding layer, having a lower index of refraction, is placed between each waveguide layer. Since the cladding makes the screen surface black, the contrast is high. The prototype display is 9 inches wide by 5 inches high and approximately I inch thick. A 3 milliwatt HeNe laser is used as the illumination source and a vector scanning technique is employed.

  19. Plasma Deposition of Amorphous Silicon

    Science.gov (United States)

    Calcote, H. F.

    1982-01-01

    Strongly adhering films of silicon are deposited directly on such materials as Pyrex and Vycor (or equivalent materials) and aluminum by a non-equilibrium plasma jet. Amorphous silicon films are formed by decomposition of silicon tetrachloride or trichlorosilane in the plasma. Plasma-jet technique can also be used to deposit an adherent silicon film on aluminum from silane and to dope such films with phosphorus. Ability to deposit silicon films on such readily available, inexpensive substrates could eventually lead to lower cost photovoltaic cells.

  20. Plasma technology and its use in flat panel digital radiography.

    Science.gov (United States)

    Zur, Albert

    2010-01-01

    Plasma DR technology is used to produce a cost effective flat panel x-ray detector that acquires digital x-ray images with excellent diagnostic quality. The detector is radiation hard and permanently zero defect, with a full virtual pixel matrix that has no dead lines, pixels, or dead pixel clusters. The technology also allows the full potential of large area amorphous Selenium imaging to finally be realized (see Figure 4).

  1. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to ""fill in the blanks"" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the curre

  2. Average glandular dose with amorphous silicon full-field digital mammography - clinical results

    International Nuclear Information System (INIS)

    Purpose: Determination of average glandular dose with a full-field digital mammography system using a flat-panel X-ray detector based on amorphous silicon technology for a large group of patients. Material and Methods: The patient group includes women who were examined in a 4-month period with the digital mammographic system Senographe 2000D. The number of women was 591 and the number of exposures was 1116; only cranio-caudal projections were considered. Various quantities, including entrance surface air kerma, tube loading, and compressed breast thickness, were determined during actual mammography. Average glandular dose was determined using conversion factors g for standard breast composition. Results: The mean average glandular dose was 1.51 mGy (0.66-4.05 mGy) for a single view. The mean compressed breast thickness was 55.7 mm. The mean age of patients was 55 years (34-81 years). Conclusion: The results demonstrate that full-field digital mammography with a flat-panel detector based on amorphous silicon needs about 25% less dose in comparison with conventional screen-film mammography. (orig.)

  3. Establishment of action levels for quality control of IMRT flat panel: experience with the algorithm iGRiMLO; Establecimiento de niveles de accion para el control de calidad de IMRT con panel plano: experiencia con el algoritmo iGRiMLO

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez, V.; Dolores, VV. de los; Pastor, V.; Martinez, J.; Gimeno, J.; Guardino, C.; Crispin, V.

    2011-07-01

    Algorithm has been used at our institution iGRiMLO scheduled for individual verification of treatment plans for intensity modulated radiotherapy (IMRT) step and shoot through portal dosimetry pretreatment of non-transmission, triggering the plan directly to a portal imaging device (EPID) of an amorphous silicon flat panel.

  4. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui

    2015-04-09

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  5. Amorphous silicon based betavoltaic devices

    OpenAIRE

    Wyrsch, N; Riesen, Y.; Franco, A; S. Dunand; Kind, H.; Schneider, S.; Ballif, C.

    2013-01-01

    Hydrogenated amorphous silicon betavoltaic devices are studied both by simulation and experimentally. Devices exhibiting a power density of 0.1 μW/cm2 upon Tritium exposure were fabricated. However, a significant degradation of the performance is taking place, especially during the first hours of the exposure. The degradation behavior differs from sample to sample as well as from published results in the literature. Comparisons with degradation from beta particles suggest an effect of tritium...

  6. Amorphous-silicon cell reliability testing

    Science.gov (United States)

    Lathrop, J. W.

    1985-01-01

    The work on reliability testing of solar cells is discussed. Results are given on initial temperature and humidity tests of amorphous silicon devices. Calibration and measurement procedures for amorphous and crystalline cells are given. Temperature stress levels are diagrammed.

  7. Design scenarios for flat panel photobioreactors

    NARCIS (Netherlands)

    Slegers, P.M.; Wijffels, R.H.; Straten, van G.; Boxtel, van A.J.B.

    2011-01-01

    Evaluation of the potential of algae production for biofuel and other products at various locations throughout the world requires assessment of algae productivity under varying light conditions and different reactor layouts. A model was developed to predict algae biomass production in flat panel pho

  8. Evolution of charge emission for amorphous silicon FETs exposed to radiation

    International Nuclear Information System (INIS)

    Large area flat panel radiation imagers are currently based on hydrogenated amorphous silicon (α-Si:H) devices. For extended use in medical applications and most industrial applications the properties of the panels can be altered by the high dose the panels experience. One characteristic of these panels is a dark offset due to emission of charge from deep trap states (detrapping currents) of the α-Si:H FETs. We report on a method of isolating the contribution of channel and contact (source/drain) silicon in a standard inverted gate FET to the total charge emission current and directly measure the time evolution of both. Additionally, we investigate changes in the charge emission coming from FETs on the imager panel as a function of radiation dose up to 15 Mrad (150 kGy) absorbed in the α-Si:H of the FETs

  9. Towards upconversion for amorphous silicon solar cells

    NARCIS (Netherlands)

    de Wild, J.; Meijerink, A.; Rath, J.K.; van Sark, W.G.J.H.M.; Schropp, R.E.I.

    2010-01-01

    Upconversion of subbandgap light of thin film single junction amorphous silicon solar cells may enhance their performance in the near infrared (NIR). In this paper we report on the application of the NIR–vis upconverter β-NaYF4:Yb3+(18%) Er3+(2%) at the back of an amorphous silicon solar cell in com

  10. Investigation of Sb diffusion in amorphous silicon

    OpenAIRE

    Csik, A.; Langer, G A; Erdelyi, G.; Beke, D. L.; Erdelyi, Z.; Vad, K.

    2009-01-01

    Amorphous silicon materials and its alloys become extensively used in some technical applications involving large area of the microelectronic and optoelectronic devices. However, the amorphous-crystalline transition, segregation and diffusion processes still have numerous unanswered questions. In this work we study the Sb diffusion into an amorphous Si film by means of Secondary Neutral Mass Spectrometry (SNMS). Amorphous Si/Si1-xSbx/Si tri-layer samples with 5 at% antimony concentration were...

  11. Tests Of Amorphous-Silicon Photovoltaic Modules

    Science.gov (United States)

    Ross, Ronald G., Jr.

    1988-01-01

    Progress in identification of strengths and weaknesses of amorphous-silicon technology detailed. Report describes achievements in testing reliability of solar-power modules made of amorphous-silicon photovoltaic cells. Based on investigation of modules made by U.S. manufacturers. Modules subjected to field tests, to accelerated-aging tests in laboratory, and to standard sequence of qualification tests developed for modules of crystalline-silicon cells.

  12. Raman Amplifier Based on Amorphous Silicon Nanoparticles

    OpenAIRE

    M.A. Ferrara; Rendina, I.; S. N. Basu; Dal Negro, L.; Sirleto, L.

    2012-01-01

    The observation of stimulated Raman scattering in amorphous silicon nanoparticles embedded in Si-rich nitride/silicon superlattice structures (SRN/Si-SLs) is reported. Using a 1427 nm continuous-wavelength pump laser, an amplification of Stokes signal up to 0.9 dB/cm at 1540.6 nm and a significant reduction in threshold power of about 40% with respect to silicon are experimentally demonstrated. Our results indicate that amorphous silicon nanoparticles are a great promise for Si-based Raman la...

  13. Laser annealing of hydrogen implanted amorphous silicon

    International Nuclear Information System (INIS)

    Amorphous silicon, prepared by silicon bombardment at energies of 200 to 250 keV, was implanted with 40 keV H2+ to peak concentrations up to 15 at .% and recrystallized in air by single 20 nsec pulses at 1.06 μm from a Nd:glass laser. Amorphous layer formation and recrystallization were verified using Raman spectroscopy and ion backscattering/channeling analysis

  14. Electron tunnelling into amorphous germanium and silicon.

    Science.gov (United States)

    Smith, C. W.; Clark, A. H.

    1972-01-01

    Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.

  15. Use and imaging performance of CMOS flat panel imager with LiF/ZnS(Ag) and Gadox scintillation screens for neutron radiography

    Science.gov (United States)

    Cha, B. K.; kim, J. Y.; Kim, T. J.; Sim, C.; Cho, G.; Lee, D. H.; Seo, C.-W.; Jeon, S.; Huh, Y.

    2011-01-01

    In digital neutron radiography system, a thermal neutron imaging detector based on neutron-sensitive scintillating screens with CMOS(complementary metal oxide semiconductor) flat panel imager is introduced for non-destructive testing (NDT) application. Recently, large area CMOS APS (active-pixel sensor) in conjunction with scintillation films has been widely used in many digital X-ray imaging applications. Instead of typical imaging detectors such as image plates, cooled-CCD cameras and amorphous silicon flat panel detectors in combination with scintillation screens, we tried to apply a scintillator-based CMOS APS to neutron imaging detection systems for high resolution neutron radiography. In this work, two major Gd2O2S:Tb and 6LiF/ZnS:Ag scintillation screens with various thickness were fabricated by a screen printing method. These neutron converter screens consist of a dispersion of Gd2O2S:Tb and 6LiF/ZnS:Ag scintillating particles in acrylic binder. These scintillating screens coupled-CMOS flat panel imager with 25x50mm2 active area and 48μm pixel pitch was used for neutron radiography. Thermal neutron flux with 6x106n/cm2/s was utilized at the NRF facility of HANARO in KAERI. The neutron imaging characterization of the used detector was investigated in terms of relative light output, linearity and spatial resolution in detail. The experimental results of scintillating screen-based CMOS flat panel detectors demonstrate possibility of high sensitive and high spatial resolution imaging in neutron radiography system.

  16. Ultrabarrier Flexible Substrates for Flat Panel Displays

    Energy Technology Data Exchange (ETDEWEB)

    Burrows, Paul E.; Graff, Gordon L.; Gross, Mark E.; Martin, Peter M.; Shi, Ming-Kun; Hall, Michael G.; Mast, Eric S.; Bonham, Charles C.; Bennett, Wendy D.; Sullivan, Michael B.

    2001-05-01

    We describe a flexible, transparent plastic substrate for flat panel display applications. Using roll-coating techniques, we apply a composite thin film barrier to commercially available polymers, which restricts moisture and oxygen permeation to undetectable levels. The barrier film can be capped with a thin film of transparent conductive oxide in the same roll-coater, yielding an engineered substrate (Barix™) for next generation, rugged, lightweight or flexible displays. The substrate is sufficiently impermeable to moisture and oxygen for application to moisture-sensitive display applications, such as organic light emitting displays (OLEDs). This enables, for the first time, lightweight and flexible emissive organic displays.

  17. Atomic-scale disproportionation in amorphous silicon monoxide.

    Science.gov (United States)

    Hirata, Akihiko; Kohara, Shinji; Asada, Toshihiro; Arao, Masazumi; Yogi, Chihiro; Imai, Hideto; Tan, Yongwen; Fujita, Takeshi; Chen, Mingwei

    2016-01-01

    Solid silicon monoxide is an amorphous material which has been commercialized for many functional applications. However, the amorphous structure of silicon monoxide is a long-standing question because of the uncommon valence state of silicon in the oxide. It has been deduced that amorphous silicon monoxide undergoes an unusual disproportionation by forming silicon- and silicon-dioxide-like regions. Nevertheless, the direct experimental observation is still missing. Here we report the amorphous structure characterized by angstrom-beam electron diffraction, supplemented by synchrotron X-ray scattering and computer simulations. In addition to the theoretically predicted amorphous silicon and silicon-dioxide clusters, suboxide-type tetrahedral coordinates are detected by angstrom-beam electron diffraction at silicon/silicon-dioxide interfaces, which provides compelling experimental evidence on the atomic-scale disproportionation of amorphous silicon monoxide. Eventually we develop a heterostructure model of the disproportionated silicon monoxide which well explains the distinctive structure and properties of the amorphous material. PMID:27172815

  18. Atomic-scale disproportionation in amorphous silicon monoxide

    Science.gov (United States)

    Hirata, Akihiko; Kohara, Shinji; Asada, Toshihiro; Arao, Masazumi; Yogi, Chihiro; Imai, Hideto; Tan, Yongwen; Fujita, Takeshi; Chen, Mingwei

    2016-05-01

    Solid silicon monoxide is an amorphous material which has been commercialized for many functional applications. However, the amorphous structure of silicon monoxide is a long-standing question because of the uncommon valence state of silicon in the oxide. It has been deduced that amorphous silicon monoxide undergoes an unusual disproportionation by forming silicon- and silicon-dioxide-like regions. Nevertheless, the direct experimental observation is still missing. Here we report the amorphous structure characterized by angstrom-beam electron diffraction, supplemented by synchrotron X-ray scattering and computer simulations. In addition to the theoretically predicted amorphous silicon and silicon-dioxide clusters, suboxide-type tetrahedral coordinates are detected by angstrom-beam electron diffraction at silicon/silicon-dioxide interfaces, which provides compelling experimental evidence on the atomic-scale disproportionation of amorphous silicon monoxide. Eventually we develop a heterostructure model of the disproportionated silicon monoxide which well explains the distinctive structure and properties of the amorphous material.

  19. Amorphous silicon detectors in positron emission tomography

    International Nuclear Information System (INIS)

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters ε2τ's are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs

  20. Amorphous silicon detectors in positron emission tomography

    Energy Technology Data Exchange (ETDEWEB)

    Conti, M. (Istituto Nazionale di Fisica Nucleare, Pisa (Italy) Lawrence Berkeley Lab., CA (USA)); Perez-Mendez, V. (Lawrence Berkeley Lab., CA (USA))

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters {epsilon}{sup 2}{tau}'s are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs.

  1. Experimental verification of ion range calculation in a treatment planning system using a flat-panel detector

    Science.gov (United States)

    Telsemeyer, Julia; Ackermann, Benjamin; Ecker, Swantje; Jäkel, Oliver; Martišíková, Mária

    2014-07-01

    Heavy ion-beam therapy is a highly precise radiation therapy exploiting the characteristic interaction of ions with matter. The steep dose gradient of the Bragg curve allows the irradiation of targets with high-dose and a narrow dose penumbra around the target, in contrast to photon irradiation. This, however, makes heavy ion-beam therapy very sensitive to minor changes in the range calculation of the treatment planning system, as it has a direct influence on the outcome of the treatment. Our previous study has shown that ion radiography with an amorphous silicon flat-panel detector allows the measurement of the water equivalent thickness (WET) of an imaging object with good accuracy and high spatial resolution. In this study, the developed imaging technique is used to measure the WET distribution of a patient-like phantom, and these results are compared to the WET calculation of the treatment planning system. To do so, a measured two-dimensional map of the WET of an anthropomorphic phantom was compared to WET distributions based on x-ray computed tomography images as used in the treatment planning system. It was found that the WET maps agree well in the overall shape and two-dimensional distribution of WET values. Quantitatively, the ratio of the two-dimensional WET maps shows a mean of 1.004 with a standard deviation of 0.022. Differences were found to be concentrated at high WET gradients. This could be explained by the Bragg-peak degradation, which is measured in detail by ion radiography with the flat-panel detector, but is not taken into account in the treatment planning system. Excluding pixels exhibiting significant Bragg-peak degradation, the mean value of the ratio was found to be 1.000 with a standard deviation of 0.012. Employment of the amorphous silicon flat-panel detector for WET measurements allows us to detect uncertainties of the WET determination in the treatment planning process. This makes the investigated technique a very helpful tool to study

  2. Transverse and longitudinal vibrations in amorphous silicon

    Science.gov (United States)

    Beltukov, Y. M.; Fusco, C.; Tanguy, A.; Parshin, D. A.

    2015-12-01

    We show that harmonic vibrations in amorphous silicon can be decomposed to transverse and longitudinal components in all frequency range even in the absence of the well defined wave vector q. For this purpose we define the transverse component of the eigenvector with given ω as a component, which does not change the volumes of Voronoi cells around atoms. The longitudinal component is the remaining orthogonal component. We have found the longitudinal and transverse components of the vibrational density of states for numerical model of amorphous silicon. The vibrations are mostly transverse below 7 THz and above 15 THz. In the frequency interval in between the vibrations have a longitudinal nature. Just this sudden transformation of vibrations at 7 THz from almost transverse to almost longitudinal ones explains the prominent peak in the diffusivity of the amorphous silicon just above 7 THz.

  3. Towards upconversion for amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    de Wild, J.; Rath, J.K.; Schropp, R.E.I. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics, P.O. Box 80000, 3508 TA Utrecht (Netherlands); Meijerink, A. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Condensed Matter and Interfaces, P.O. Box 80000, 3508 TA Utrecht (Netherlands); van Sark, W.G.J.H.M. [Utrecht University, Copernicus Institute for Sustainable Development and Innovation, Science, Technology and Society, Heidelberglaan 2, 3584 CS Utrecht (Netherlands)

    2010-11-15

    Upconversion of subbandgap light of thin film single junction amorphous silicon solar cells may enhance their performance in the near infrared (NIR). In this paper we report on the application of the NIR-vis upconverter {beta}-NaYF{sub 4}:Yb{sup 3+}(18%) Er{sup 3+}(2%) at the back of an amorphous silicon solar cell in combination with a white back reflector and its response to infrared irradiation. Current-voltage measurements and spectral response measurements were done on experimental solar cells. An enhancement of 10 {mu}A/cm{sup 2} was measured under illumination with a 980 nm diode laser (10 mW). A part of this was due to defect absorption in localized states of the amorphous silicon. (author)

  4. DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON

    OpenAIRE

    Adler, D.

    1981-01-01

    Our comprehension of the physical properties of amorphous semiconductors has improved considerably over the past few years, but many puzzles remain. From our present perspective, the major features of chalcogenide glasses appear to be well understood, and some of the fine points which have arisen recently have been explained within the same general model. On the other hand, there are a grear number of unresolved mysteries with regard to amorphous silicon-based alloys. In this paper, the valen...

  5. Atomic-scale disproportionation in amorphous silicon monoxide

    OpenAIRE

    Hirata, Akihiko; Kohara, Shinji; Asada, Toshihiro; Arao, Masazumi; Yogi, Chihiro; Imai, Hideto; Tan, Yongwen; Fujita, Takeshi; Chen, Mingwei

    2016-01-01

    Solid silicon monoxide is an amorphous material which has been commercialized for many functional applications. However, the amorphous structure of silicon monoxide is a long-standing question because of the uncommon valence state of silicon in the oxide. It has been deduced that amorphous silicon monoxide undergoes an unusual disproportionation by forming silicon- and silicon-dioxide-like regions. Nevertheless, the direct experimental observation is still missing. Here we report the amorphou...

  6. Neutron irradiation induced amorphization of silicon carbide

    International Nuclear Information System (INIS)

    This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 x 1025 n/m2. Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density (-10.8%), elastic modulus as measured using a nanoindentation technique (-45%), hardness as measured by nanoindentation (-45%), and standard Vickers hardness (-24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C

  7. Neutron irradiation induced amorphization of silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Snead, L.L.; Hay, J.C. [Oak Ridge National Lab., TN (United States)

    1998-09-01

    This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 {times} 10{sup 25} n/m{sup 2}. Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density ({minus}10.8%), elastic modulus as measured using a nanoindentation technique ({minus}45%), hardness as measured by nanoindentation ({minus}45%), and standard Vickers hardness ({minus}24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C.

  8. Solid-state, flat-panel, digital radiography detectors and their physical imaging characteristics.

    Science.gov (United States)

    Cowen, A R; Kengyelics, S M; Davies, A G

    2008-05-01

    Solid-state, digital radiography (DR) detectors, designed specifically for standard projection radiography, emerged just before the turn of the millennium. This new generation of digital image detector comprises a thin layer of x-ray absorptive material combined with an electronic active matrix array fabricated in a thin film of hydrogenated amorphous silicon (a-Si:H). DR detectors can offer both efficient (low-dose) x-ray image acquisition plus on-line readout of the latent image as electronic data. To date, solid-state, flat-panel, DR detectors have come in two principal designs, the indirect-conversion (x-ray scintillator-based) and the direct-conversion (x-ray photoconductor-based) types. This review describes the underlying principles and enabling technologies exploited by these designs of detector, and evaluates their physical imaging characteristics, comparing performance both against each other and computed radiography (CR). In standard projection radiography indirect conversion DR detectors currently offer superior physical image quality and dose efficiency compared with direct conversion DR and modern point-scan CR. These conclusions have been confirmed in the findings of clinical evaluations of DR detectors. Future trends in solid-state DR detector technologies are also briefly considered. Salient innovations include WiFi-enabled, portable DR detectors, improvements in x-ray absorber layers and developments in alternative electronic media to a-Si:H. PMID:18374710

  9. Solid-state, flat-panel, digital radiography detectors and their physical imaging characteristics

    International Nuclear Information System (INIS)

    Solid-state, digital radiography (DR) detectors, designed specifically for standard projection radiography, emerged just before the turn of the millennium. This new generation of digital image detector comprises a thin layer of x-ray absorptive material combined with an electronic active matrix array fabricated in a thin film of hydrogenated amorphous silicon (a-Si:H). DR detectors can offer both efficient (low-dose) x-ray image acquisition plus on-line readout of the latent image as electronic data. To date, solid-state, flat-panel, DR detectors have come in two principal designs, the indirect-conversion (x-ray scintillator-based) and the direct-conversion (x-ray photoconductor-based) types. This review describes the underlying principles and enabling technologies exploited by these designs of detector, and evaluates their physical imaging characteristics, comparing performance both against each other and computed radiography (CR). In standard projection radiography indirect conversion DR detectors currently offer superior physical image quality and dose efficiency compared with direct conversion DR and modern point-scan CR. These conclusions have been confirmed in the findings of clinical evaluations of DR detectors. Future trends in solid-state DR detector technologies are also briefly considered. Salient innovations include WiFi-enabled, portable DR detectors, improvements in x-ray absorber layers and developments in alternative electronic media to a-Si:H

  10. NMR INVESTIGATIONS OF HYDROGENATED AMORPHOUS SILICON

    OpenAIRE

    J. Reimer

    1981-01-01

    A review is presented of the N.M.R. (Nuclear Magnetic Resonance) studies to date of hydrogenated amorphous silicon-hydrogen films. Structural features of proton N.M.R. lineshapes, dynamics of hydrogen containing defect sites, and the promise of quantitative determinations of local silicon-hydrogen bonding environments are discussed in detail. Finally, some comments are given on future directions for N.M.R. studies of hydrogenated thin films.

  11. Stable Transistors in Hydrogenated Amorphous Silicon

    OpenAIRE

    J. M. Shannon

    2004-01-01

    Thin-film field-effect transistors in hydrogenated amorphous silicon are notoriously unstable due to the formation of silicon dangling bond trapping states in the accumulated channel region during operation. Here, we show that by using a source-gated transistor a major improvement in stability is obtained. This occurs because the electron quasi-Fermi level is pinned near the center of the band in the active source region of the device and strong accumulation of electrons is prevented. The use...

  12. Noise and degradation of amorphous silicon devices

    NARCIS (Netherlands)

    Bakker, J.P.R.

    2003-01-01

    Electrical noise measurements are reported on two devices of the disordered semiconductor hydrogenated amorphous silicon (a-Si:H). The material is applied in sandwich structures and in thin-film transistors (TFTs). In a sandwich configuration of an intrinsic layer and two thin doped layers, the obse

  13. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    A R M Yusoff; M N Syahrul; K Henkel

    2007-08-01

    A major issue encountered during fabrication of triple junction -Si solar cells on polyimide substrates is the adhesion of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous silicon solar cells made on different polyimide substrates (Kapton VN, Upilex-S and Gouldflex), and the effect of tie coats on film adhesion.

  14. Preparation of hydrogenated amorphous silicon tin alloys

    OpenAIRE

    Vergnat, M.; Marchal, G.; Piecuch, M.

    1987-01-01

    This paper describes a new method to obtain hydrogenated amorphous semiconductor alloys. The method is reactive co-evaporation. Silicon tin hydrogenated alloys are prepared under atomic hydrogen atmosphere. We discuss the influence of various parameters of preparation (hydrogen pressure, tungsten tube temperature, substrate temperature, annealing...) on electrical properties of samples.

  15. Generation of correlated photons in hydrogenated amorphous-silicon waveguides

    OpenAIRE

    Clemmen, S.; Perret, A; Selvaraja, Shankar Kumar; Bogaerts, Wim; Van Thourhout, Dries; Baets, Roel; Emplit, Ph.; Massar, S.

    2011-01-01

    We report the first (to our knowledge) observation of correlated photon emission in hydrogenated amorphous- silicon waveguides. We compare this to photon generation in crystalline silicon waveguides with the same geome- try. In particular, we show that amorphous silicon has a higher nonlinearity and competes with crystalline silicon in spite of higher loss.

  16. Self-Diffusion in Amorphous Silicon.

    Science.gov (United States)

    Strauß, Florian; Dörrer, Lars; Geue, Thomas; Stahn, Jochen; Koutsioubas, Alexandros; Mattauch, Stefan; Schmidt, Harald

    2016-01-15

    The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on ^{29}Si/^{nat}Si heterostructures using neutron reflectometry and secondary ion mass spectrometry. The diffusivities follow the Arrhenius law in the temperature range between 550 and 700 °C with an activation energy of (4.4±0.3)  eV. In comparison with single crystalline silicon the diffusivities are tremendously higher by 5 orders of magnitude at about 700 °C, which can be interpreted as the consequence of a high diffusion entropy. PMID:26824552

  17. PHYSICAL PROPERTIES OF AMORPHOUS CVD SILICON

    OpenAIRE

    Hirose, M.

    1981-01-01

    Amorphous silicon produced from the chemical vapor decomposition of silane at ~600 °C offers a pure silicon network containing no bonded-hydrogen and involving native defects of the order of 1 x 1019 cm-3. Doped phosphorus or boron atoms in the CVD a-Si interact with the defects to reduce the gap states and the spin density as well. The mechanism of the defect compensation has been interpreted in terms of complex-defect formation through the reaction between three-fold dopant atoms and divaca...

  18. Amorphous metallic films in silicon metallization systems

    Science.gov (United States)

    So, F.; Kolawa, E.; Nicolet, M. A.

    1985-01-01

    Diffusion barrier research was focussed on lowering the chemical reactivity of amorphous thin films on silicon. An additional area of concern is the reaction with metal overlays such as aluminum, silver, and gold. Gold was included to allow for technology transfer to gallium arsenide PV cells. Amorphous tungsten nitride films have shown much promise. Stability to annealing temperatures of 700, 800, and 550 C were achieved for overlays of silver, gold, and aluminum, respectively. The lower results for aluminum were not surprising because there is an eutectic that can form at a lower temperature. It seems that titanium and zirconium will remove the nitrogen from a tungsten nitride amorphous film and render it unstable. Other variables of research interest were substrate bias and base pressure during sputtering.

  19. Amorphous silicon for thin-film transistors

    OpenAIRE

    Schropp, Rudolf Emmanuel Isidore

    1987-01-01

    Hydrogenated amorphous silicon (a-Si:H) has considerable potential as a semiconducting material for large-area photoelectric and photovoltaic applications. Moreover, a-Si:H thin-film transistors (TFT’s) are very well suited as switching devices in addressable liquid crystal display panels and addressable image sensor arrays, due to a new technology of low-cost, Iow-temperature processing overlarge areas. ... Zie: Abstract

  20. Transverse and longitudinal vibrations in amorphous silicon

    OpenAIRE

    Beltukov, Y. M.; De Fusco, C; Tanguy, A.; Parshin, D. A.

    2015-01-01

    We show that harmonic vibrations in amorphous silicon can be decomposed to transverse and longitudinal components in all frequency range even in the absence of the well defined wave vector ${\\bf q}$. For this purpose we define the transverse component of the eigenvector with given $\\omega$ as a component, which does not change the volumes of Voronoi cells around atoms. The longitudinal component is the remaining orthogonal component. We have found the longitudinal and transverse components of...

  1. Polymeric amorphous carbon as p-type window within amorphous silicon solar cells

    NARCIS (Netherlands)

    Khan, R.U.A.; Silva, S.R.P.; Van Swaaij, R.A.C.M.M.

    2003-01-01

    Amorphous carbon (a-C) has been shown to be intrinsically p-type, and polymeric a-C (PAC) possesses a wide Tauc band gap of 2.6 eV. We have replaced the p-type amorphous silicon carbide layer of a standard amorphous silicon solar cell with an intrinsic ultrathin layer of PAC. The thickness of the p

  2. Nickel-induced crystallization of amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, J A; Arce, R D; Buitrago, R H [INTEC (CONICET-UNL), Gueemes 3450, S3000GLN Santa Fe (Argentina); Budini, N; Rinaldi, P, E-mail: jschmidt@intec.unl.edu.a [FIQ - UNL, Santiago del Estero 2829, S3000AOM Santa Fe (Argentina)

    2009-05-01

    The nickel-induced crystallization of hydrogenated amorphous silicon (a-Si:H) is used to obtain large grained polycrystalline silicon thin films on glass substrates. a-Si:H is deposited by plasma enhanced chemical vapour deposition at 200 deg. C, preparing intrinsic and slightly p-doped samples. Each sample was divided in several pieces, over which increasing Ni concentrations were sputtered. Two crystallization methods are compared, conventional furnace annealing (CFA) and rapid thermal annealing (RTA). The crystallization was followed by optical microscopy and scanning electron microscopy observations, X-ray diffraction, and reflectance measurements in the UV region. The large grain sizes obtained - larger than 100{mu}m for the samples crystallized by CFA - are very encouraging for the preparation of low-cost thin film polycrystalline silicon solar cells.

  3. Modelling the light induced metastable effects in amorphous silicon

    OpenAIRE

    Munyeme, G.; Chinyama, G.K.; Zeman, M.; R. E. I. Schropp; Weg, W

    2008-01-01

    We present results of computer simulations of the light induced degradation of amorphous silicon solar cells. It is now well established that when amorphous silicon is illuminated the density of dangling bond states increases. Dangling bond states produce amphoteric electronic mid-gap states which act as efficient charge trapping and recombination centres. The increase in dangling bond states causes a decrease in the performance of amorphous silicon solar cells. To show this effect, a modelli...

  4. Evaluation of image quality and appropriate X-ray exposure of a flat panel detector

    International Nuclear Information System (INIS)

    We evaluated image quality and necessary patient exposure when using the CXDI-11 (Canon Inc.) flat panel detector (FPD). This detector, which consists of a rare earth fluorescent screen (Gd2O2S: Tb) and amorphous silicon sensor, was compared with the FCR-5000 (Fuji Film Medical Co., Ltd.) CR and the UR-3/HGM2 (Fuji Film Medical Co., Ltd.) film-screen (F/S) combination. Comparisons of both physical imaging characteristics and clinical image quality were carried out. The final MTF of the FPD was found to be similar to or better than those of the CR and F/S systems. For identical exposures, the overall Wiener spectrum of the FPD was found to be slightly poorer than that of the F/S combination. The NEQ of the FPD was found to be similar to or better than those of the CR and F/S systems. Comparison of chest images showed that the FPD produced images with quality comparable to or higher than those of the CR system. Similarly, evaluation of abdominal and bone images using a 5-scale method showed that the FPD produced images with quality comparable to or higher than those of the CR system. As with CR, the x-ray quantum mottle in FPD images becomes noticeable at low exposures. Clinical images were therefore taken with a 30% increase in exposure, giving a Wiener spectrum for the FPD images similar to that obtained with the F/S images. This is probably not a significant increase in exposure, given the improvement in image quality and increased ease of use provided by the CXDI system. Further, future improvements in hardware and image processing may allow images to be taken with the same exposure used for F/S images. Our evaluation of both image quality and x-ray exposure has therefore indicated the value of the FPD in the clinical environment. (author)

  5. Three-Terminal Amorphous Silicon Solar Cells

    OpenAIRE

    Cheng-Hung Tai; Chu-Hsuan Lin; Chih-Ming Wang; Chun-Chieh Lin

    2011-01-01

    Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si...

  6. Radiation resistance studies of amorphous silicon films

    Science.gov (United States)

    Woodyard, James R.; Payson, J. Scott

    1989-01-01

    Hydrogenated amorphous silicon thin films were irradiated with 2.00 MeV helium ions using fluences ranging from 1E11 to 1E15 cm(-2). The films were characterized using photothermal deflection spectroscopy and photoconductivity measurements. The investigations show that the radiation introduces sub-band-gap states 1.35 eV below the conduction band and the states increase supralinearly with fluence. Photoconductivity measurements suggest the density of states above the Fermi energy is not changing drastically with fluence.

  7. Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells

    OpenAIRE

    Seif, Johannes Peter; Descoeudres, Antoine; Filipic, Miha; Smole, Franc; Topic, Marko; Holman, Zachary Charles; De Wolf, Stefaan; Ballif, Christophe

    2014-01-01

    In amorphous/crystalline silicon heterojunction solar cells, optical losses can be mitigated by replacing the amorphous silicon films by wider bandgap amorphous silicon oxide layers. In this article, we use stacks of intrinsic amorphous silicon and amorphous silicon oxide as front intrinsic buffer layers and show that this increases the short-circuit current density by up to 0.43 mA/cm2 due to less reflection and a higher transparency at short wavelengths. Additionally, high open-circuit volt...

  8. Electroluminescent Polymers and Carbon Nanotubes for Flat Panel Displays

    Institute of Scientific and Technical Information of China (English)

    Liming Dai; Limin Dong; Mei Gao; Shaoming Huang; Oddvar Johansen; Albert W.H.Mau,Zoran Vasic; Berthold Winkler; Yongyuang Yang

    2000-01-01

    polymeric light-emitting diodes(LEDs) with sufficient brightness. efficiencies, low driving voltages, and various interesting features have been reported. The relatively short device lifetime, however, still remains as a major problem to be solved before any commercial applications will be realized. In this regard,carbon nanotubes have recently been proposed as more robust electron field emitters for flat panel displays. We have synthesised large arrays of vertically aligned carbon nanotubes, from which micropatterns of the aligned nanotubes suitable for flat panel displays were fabricated on various substrates. In this paper, we summarise our work on the synthesis and microfabrication of electroluminescent polymers and carbon nanotubes for flat panel displays with reference to other complementary work as appropriate.

  9. Endurance Tests Of Amorphous-Silicon Photovoltaic Modules

    Science.gov (United States)

    Ross, Ronald G., Jr.; Sugimura, Russell S.

    1989-01-01

    Failure mechanisms in high-power service studied. Report discusses factors affecting endurance of amorphous-silicon solar cells. Based on field tests and accelerated aging of photovoltaic modules. Concludes that aggressive research needed if amorphous-silicon modules to attain 10-year life - value U.S. Department of Energy established as goal for photovoltaic modules in commercial energy-generating plants.

  10. Modelling the light induced metastable effects in amorphous silicon

    NARCIS (Netherlands)

    Munyeme, G.; Chinyama, G.K.; Zeman, M.; Schropp, R.E.I.; van der Weg, W.

    2008-01-01

    We present results of computer simulations of the light induced degradation of amorphous silicon solar cells. It is now well established that when amorphous silicon is illuminated the density of dangling bond states increases. Dangling bond states produce amphoteric electronic mid-gap states which a

  11. Technical advances of interventional fluoroscopy and flat panel image receptor.

    Science.gov (United States)

    Lin, Pei-Jan Paul

    2008-11-01

    In the past decade, various radiation reducing devices and control circuits have been implemented on fluoroscopic imaging equipment. Because of the potential for lengthy fluoroscopic procedures in interventional cardiovascular angiography, these devices and control circuits have been developed for the cardiac catheterization laboratories and interventional angiography suites. Additionally, fluoroscopic systems equipped with image intensifiers have benefited from technological advances in x-ray tube, x-ray generator, and spectral shaping filter technologies. The high heat capacity x-ray tube, the medium frequency inverter generator with high performance switching capability, and the patient dose reduction spectral shaping filter had already been implemented on the image intensified fluoroscopy systems. These three underlying technologies together with the automatic dose rate and image quality (ADRIQ) control logic allow patients undergoing cardiovascular angiography procedures to benefit from "lower patient dose" with "high image quality." While photoconductor (or phosphor plate) x-ray detectors and signal capture thin film transistor (TFT) and charge coupled device (CCD) arrays are analog in nature, the advent of the flat panel image receptor allowed for fluoroscopy procedures to become more streamlined. With the analog-to-digital converter built into the data lines, the flat panel image receptor appears to become a digital device. While the transition from image intensified fluoroscopy systems to flat panel image receptor fluoroscopy systems is part of the on-going "digitization of imaging," the value of a flat panel image receptor may have to be evaluated with respect to patient dose, image quality, and clinical application capabilities. The advantage of flat panel image receptors has yet to be fully explored. For instance, the flat panel image receptor has its disadvantages as compared to the image intensifiers; the cost of the equipment is probably the most

  12. A STUDY OF TIN IMPURITY ATOMS IN AMORPHOUS SILICON

    OpenAIRE

    Rabchanova, Tatiana

    2013-01-01

    Using the Mössbauer spectroscopy method for the 119 Sn isotope the state of tin impurity atoms in amorphous a-Si silicon is studied. The electrical and optical properties of tin doped films of thermally spray-coated amorphous silicon have been studied. It is shown that in contrast to the crystalline silicon where tin is an electrically inactive substitution impurity, in vacuum deposited amorphous silicon it produces an acceptor band near the valence band and a fraction of the tin atoms become...

  13. Development of CT and 3D-CT Using Flat Panel Detector Based Real-Time Digital Radiography System

    Science.gov (United States)

    Ravindran, V. R.; Sreelakshmi, C.; Vibin, Vibin

    2008-09-01

    The application of Digital Radiography in the Nondestructive Evaluation (NDE) of space vehicle components is a recent development in India. A Real-time DR system based on amorphous silicon Flat Panel Detector has been developed for the NDE of solid rocket motors at Rocket Propellant Plant of VSSC in a few years back. The technique has been successfully established for the nondestructive evaluation of solid rocket motors. The DR images recorded for a few solid rocket specimens are presented in the paper. The Real-time DR system is capable of generating sufficient digital X-ray image data with object rotation for the CT image reconstruction. In this paper the indigenous development of CT imaging based on the Realtime DR system for solid rocket motor is presented. Studies are also carried out to generate 3D-CT image from a set of adjacent CT images of the rocket motor. The capability of revealing the spatial location and characterisation of defect is demonstrated by the CT and 3D-CT images generated.

  14. Three-Terminal Amorphous Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Cheng-Hung Tai

    2011-01-01

    Full Text Available Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell was 9.0%. Furthermore, an efficiency of 11.7% was achieved by thickness optimization of the three-terminal solar cell.

  15. Dynamics of hydrogen in hydrogenated amorphous silicon

    Indian Academy of Sciences (India)

    Ranber Singh; S Prakash

    2003-07-01

    The problem of hydrogen diffusion in hydrogenated amorphous silicon (a-Si:H) is studied semiclassically. It is found that the local hydrogen concentration fluctuations-induced extra potential wells, if intense enough, lead to the localized electronic states in a-Si:H. These localized states are metastable. The trapping of electrons and holes in these states leads to the electrical degradation of the material. These states also act as recombination centers for photo-generated carriers (electrons and holes) which in turn may excite a hydrogen atom from a nearby Si–H bond and breaks the weak (strained) Si–Si bond thereby apparently enhancing the hydrogen diffusion and increasing the light-induced dangling bonds.

  16. Amorphous Silicon Display Backplanes on Plastic Substrates

    Science.gov (United States)

    Striakhilev, Denis; Nathan, Arokia; Vygranenko, Yuri; Servati, Peyman; Lee, Czang-Ho; Sazonov, Andrei

    2006-12-01

    Amorphous silicon (a-Si) thin-film transistor (TFT) backplanes are very promising for active-matrix organic light-emitting diode displays (AMOLEDs) on plastic. The technology benefits from a large manufacturing base, simple fabrication process, and low production cost. The concern lies in the instability of the TFTs threshold voltage (VT) and its low device mobility. Although VT-instability can be compensated by means of advanced multi-transistor pixel circuits, the lifetime of the display is still dependent on the TFT process quality and bias conditions. A-Si TFTs with field-effect mobility of 1.1 cm2/V · s and pixel driver circuits have been fabricated on plastic substrates at 150 °C. The circuits are characterized in terms of current drive capability and long-term stability of operation. The results demonstrate sufficient and stable current delivery and the ability of the backplane on plastic to meet AMOLED requirements.

  17. Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films

    OpenAIRE

    Voz Sánchez, Cristóbal; Martin, I.; Orpella, A.; Puigdollers i González, Joaquim; Vetter, M.; Alcubilla González, Ramón; Soler Vilamitjana, David; Fonrodona Turon, Marta; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi

    2003-01-01

    In this work, we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination velocity was the quasi-steady-state photoconductance technique. Hydrogenated amorphous and nanocrystalline silicon films were evaluated as passivating layers on n- and p-type float zone silicon wafers. The best results were obtained with amorphous silicon films, which allowed ...

  18. RF Sputtering for preparing substantially pure amorphous silicon monohydride

    Science.gov (United States)

    Jeffrey, Frank R.; Shanks, Howard R.

    1982-10-12

    A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

  19. Laser annealing of amorphous silicon core optical fibers

    OpenAIRE

    Healy, N; Mailis, S.; Day, T. D.; Sazio, P.J.A.; Badding, J. V.; A.C. Peacock

    2012-01-01

    Laser annealing of an optical fiber with an amorphous silicon core is demonstrated. The annealing process produces a fiber that has a highly crystalline core, whilst reducing the optical transmission losses by ~3 orders of magnitude.

  20. Nanocavity Shrinkage and Preferential Amorphization during Irradiation in Silicon

    Institute of Scientific and Technical Information of China (English)

    ZHU Xian-Fang; WANG Zhan-Guo

    2005-01-01

    @@ We model the recent experimental results and demonstrate that the internal shrinkage of nanocavities in silicon is intrinsically associated with preferential amorphization as induced by self-ion irradiation.

  1. Thermal properties of amorphous/crystalline silicon superlattices.

    Science.gov (United States)

    France-Lanord, Arthur; Merabia, Samy; Albaret, Tristan; Lacroix, David; Termentzidis, Konstantinos

    2014-09-01

    Thermal transport properties of crystalline/amorphous silicon superlattices using molecular dynamics are investigated. We show that the cross-plane conductivity of the superlattices is very low and close to the conductivity of bulk amorphous silicon even for amorphous layers as thin as ≃ 6 Å. The cross-plane thermal conductivity weakly increases with temperature which is associated with a decrease of the Kapitza resistance with temperature at the crystalline/amorphous interface. This property is further investigated considering the spatial analysis of the phonon density of states in domains close to the interface. Interestingly, the crystalline/amorphous superlattices are shown to display large thermal anisotropy, according to the characteristic sizes of elaborated structures. These last results suggest that the thermal conductivity of crystalline/amorphous superlattices can be phonon engineered, providing new directions for nanostructured thermoelectrics and anisotropic materials in thermal transport. PMID:25105883

  2. Digital radiography with large-area flat-panel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kotter, E.; Langer, M. [Department of Diagnostic Radiology, Freiburg University Hospital, Hugstetterstrasse 55, 79106 Freiburg (Germany)

    2002-10-01

    Large-area flat-panel detectors with active readout mechanisms have been on the market for the past 2 years. This article describes different detector technologies. An important distinction is made between detectors with direct and those with indirect conversion of X-rays into electrical charges. Detectors with indirect conversion are built with unstructured or structured scintillators, the latter resulting in less lateral diffusion of emitted light. Some important qualities of flat-panel detectors are discussed. The first phantom and clinical studies published report an image quality at least comparable to that of screen-film systems and a potential for dose reduction. The available studies are summarised in this article. (orig.)

  3. Digital radiography with large-area flat-panel detectors

    International Nuclear Information System (INIS)

    Large-area flat-panel detectors with active readout mechanisms have been on the market for the past 2 years. This article describes different detector technologies. An important distinction is made between detectors with direct and those with indirect conversion of X-rays into electrical charges. Detectors with indirect conversion are built with unstructured or structured scintillators, the latter resulting in less lateral diffusion of emitted light. Some important qualities of flat-panel detectors are discussed. The first phantom and clinical studies published report an image quality at least comparable to that of screen-film systems and a potential for dose reduction. The available studies are summarised in this article. (orig.)

  4. Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon

    OpenAIRE

    Ben Slama, Sonia; Hajji, Messaoud; Ezzaouia, Hatem

    2012-01-01

    Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under vacuum at 750°C. Obtained results from structural, optical, and electrical characterizations show that...

  5. Structure and Optical Properties of Silicon Nanocrystals Embedded in Amorphous Silicon Thin Films Obtained by PECVD

    OpenAIRE

    Monroy, B. M.; Aduljay Remolina Millán; García-Sánchez, M. F.; Ponce, A.; Picquart, M.; Santana, G.

    2011-01-01

    Silicon nanocrystals embedded in amorphous silicon matrix were obtained by plasma enhanced chemical vapor deposition using dichlorosilane as silicon precursor. The RF power and dichlorosilane to hydrogen flow rate ratio were varied to obtain different crystalline fractions and average sizes of silicon nanocrystals. High-resolution transmission electron microscopy images and RAMAN measurements confirmed the existence of nanocrystals embedded in the amorphous matrix with average sizes between 2...

  6. Interaction of hydrogenated amorphous silicon films with transparent conductive films

    OpenAIRE

    Kitagawa, M.; Mori, K; Ishihara, S.; Ohno, M.; Hirao, T.; Yoshioka, Y.; Kohiki, S

    1983-01-01

    The effects of the deposition temperature on the interaction of the hydrogenated amorphous silicon films with indium-tin-oxide and tin-oxide films have been investigated in the temperature range 150-300 degrees C, using Auger electron spectroscopy, secondary ion mass spectrometry, and scanning electron microscopy. It was found that the constituent atoms such as indium and tin are detected in the thin amorphous silicon films deposited. Around the interface between the transparent conductive fi...

  7. PHOTOEMISSION STUDIES OF THE TRANSITION FROM AMORPHOUS TO MICROCRYSTALLINE SILICON

    OpenAIRE

    Richter, H.; Ley, L.

    1981-01-01

    We have studied a series of samples spanning the range from purely amorphous to microcrystalline silicon prepared by chemical transport in a hydrogen plasma or by sputtering in a H2/Ar mixture. The first order Raman spectra show a superposition of amorphous and crystalline contribution, showing some features of wurtzite-silicon. The electronic density of states, as deduced from X-ray photoelectron-spectroscopy, shows a gradual change from microcrystalline structure for samples prepared by che...

  8. Experimentally Constrained Molecular Relaxation: The case of hydrogenated amorphous silicon

    OpenAIRE

    Biswas, Parthapratim; Atta-Fynn, Raymond; Drabold, David A.

    2007-01-01

    We have extended our experimentally constrained molecular relaxation technique (P. Biswas {\\it et al}, Phys. Rev. B {\\bf 71} 54204 (2005)) to hydrogenated amorphous silicon: a 540-atom model with 7.4 % hydrogen and a 611-atom model with 22 % hydrogen were constructed. Starting from a random configuration, using physically relevant constraints, {\\it ab initio} interactions and the experimental static structure factor, we construct realistic models of hydrogenated amorphous silicon. Our models ...

  9. Diffractive flat panel solar concentrators of a novel design.

    Science.gov (United States)

    de Jong, Ties M; de Boer, Dick K G; Bastiaansen, Cees W M

    2016-07-11

    A novel design for a flat panel solar concentrator is presented which is based on a light guide with a grating applied on top that diffracts light into total internal reflection. By combining geometrical and diffractive optics the geometrical concentration ratio is optimized according to the principles of nonimaging optics, while the thickness of the device is minimized due to the use of total internal reflection. PMID:27410900

  10. Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon

    Science.gov (United States)

    Bai, Feng; Li, Hong-Jin; Huang, Yuan-Yuan; Fan, Wen-Zhong; Pan, Huai-Hai; Wang, Zhuo; Wang, Cheng-Wei; Qian, Jing; Li, Yang-Bo; Zhao, Quan-Zhong

    2016-10-01

    We have used femtosecond laser pulses to ablate monocrystalline silicon wafer. Raman spectroscopy and X-ray diffraction analysis of ablation surface indicates horizontally polarized laser beam shows an enhancement in amorphization efficiency by a factor of 1.6-1.7 over the circularly polarized laser ablation. This demonstrates that one can tune the amorphization efficiency through the polarization of irradiation laser.

  11. Flexible Protocrystalline Silicon Solar Cells with Amorphous Buffer Layer

    Science.gov (United States)

    Ishikawa, Yasuaki; Schubert, Markus B.

    2006-09-01

    A low deposition temperature of 110 °C is mandatory for directly growing amorphous-silicon-based solar cells on plastic foil. The optimum absorber material at this low temperature is protocrystalline, i.e., right at the transition between amorphous and crystalline silicon. Polyethylene terephtalate foil of 50 μm thickness form the substrate of our flexible p-i-n single-junction cells. We discuss three peculiar processing techniques for achieving the maximum photovoltaic conversion efficiency of flexible low-temperature solar cells. First, we employ an optimized microcrystalline silicon p-type window layer; second, we use protocrystalline silicon for the i-layer; third, we insert an undoped amorphous silicon buffer layer at the p/i interface. The best flexible cells attain power conversion efficiencies of up to 4.9%.

  12. Anharmonic Decay of Vibrational States in Amorphous Silicon

    OpenAIRE

    Fabian, Jaroslav; Allen, Philip B.

    1996-01-01

    Anharmonic decay rates are calculated for a realistic atomic model of amorphous silicon. The results show that the vibrational states decay on picosecond timescales and follow the two-mode density of states, similar to crystalline silicon, but somewhat faster. Surprisingly little change occurs for localized states. These results disagree with a recent experiment.

  13. A real-time flat-panel X-ray pixel imaging system for low-dose medical diagnostics and craniofacial applications.

    Science.gov (United States)

    Chapuy, S; Dimcovski, D; Dimcovski, Z; Grigoriev, E; Grob, E; Ligier, Y; Pachoud, M; Riondel, F; Rüfenacht, D; Sayegh, C; Terrier, F; Valley, J F; Verdun, F R

    2000-01-01

    The aim of this study was to evaluate on-line performance of a real-time digital imaging system based on amorphous silicon technology and to compare it with conventional film-screen equipment. The digital detecting imager consists of (1) a converter, which transforms the energy of the incident X rays into light; (2) a real-time digital detecting system, capable of producing as many as 10 pictures per second using a large-area pixel matrix (20 x 20 cm2) based on solid-state amorphous silicon sensor technology with a pitch of 400 microns; and (3) appropriate computer tools for control, real-time image treatment, data representation, and off-line analysis. Different phantoms were used for qualitative comparison with the conventional film-screen technique, with images obtained with both systems at the normal dose (used as a reference), as well as with dose reduction by a factor of 10 to 100. Basic image quality parameters evaluated showed that the response of the detector is linear in a wide range of entrance air kerma; the dynamic range is higher compared with the conventional film-screen combination; the spatial resolution is 1.25 lp per millimeter, as expected from the pixel size; and good image quality is ensured at doses substantially lower than for the film-screen technique. The flat-panel X-ray imager based on amorphous silicon technology implemented in standard radiographic equipment permits acquisition of real-time images in radiology (as many as 10 images per second) of diagnostic quality with a marked reduction of dose (as much as 100 times) and better contrast compared with the standard film technique. Preliminary results obtained with a 100-micron pitch imager based on the same technology show better quality but a less substantial dose reduction. Applications in craniofacial surgery look promising. PMID:11314093

  14. Polymeric amorphous carbon as p-type window within amorphous silicon solar cells

    OpenAIRE

    Khan, R U A; Silva, S. R. P.; Van Swaaij, R.A.C.M.M.

    2003-01-01

    Amorphous carbon (a-C) has been shown to be intrinsically p-type, and polymeric a-C (PAC) possesses a wide Tauc band gap of 2.6 eV. We have replaced the p-type amorphous silicon carbide layer of a standard amorphous silicon solar cell with an intrinsic ultrathin layer of PAC. The thickness of the p layer had to be reduced from 9 to 2.5 nm in order to ensure sufficient conduction through the PAC film. Although the resulting external parameters suggest a decrease in the device efficiency from 9...

  15. Preparation and Characterization of Amorphous Silicon Oxide Nanowires

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Large-scale amorphous silicon nanowires (SiNWs) with a diameter about 100 nm and a length of dozens of micrometers on silicon wafers were synthesized by thermal evaporation of silicon monoxide (SiO).Scanning electron microscope (SEM) and transmission electron microscope (TEM) observations show that the silicon nanowires are smooth.Selected area electron diffraction (SAED) shows that the silicon nanowires are amorphous and energy-dispersive X-ray spectroscopy (EDS) indicates that the nanowires have the composition of Si and O elements in an atomic ratio of 1:2, their composition approximates that of SiO2.SiO is considered to be used as a Si sources to produce SiNWs.We conclude that the growth mechanism is closely related to the defect structure and silicon monoxide followed by growth through an oxide-assisted vapor-solid reaction.

  16. Electrical characteristics of amorphous iron-tungsten contacts on silicon

    OpenAIRE

    Finetti, M.; Pan, E. T-S.; Suni, I.; Nicolet, M-A.

    1983-01-01

    The electrical characteristics of amorphous Fe-W contacts have been determined on both p-type and n-type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities, pc=1×10^−7 and pc=2.8×10^−6, were measured on n+ and p+ silicon, respectively. These values remain constant after thermal treatment up to at least 500°C. A barrier height, φBn=0.61 V, was measured on n-type silicon.

  17. Electrical characteristics of amorphous iron-tungsten contacts on silicon

    Science.gov (United States)

    Finetti, M.; Pan, E. T.-S.; Nicolet, M.-A.; Suni, I.

    1983-01-01

    The electrical characteristics of amorphous Fe-W contacts have been determined on both p-type and n-type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities of 1 x 10 to the -7th and 2.8 x 10 to the -6th were measured on n(+) and p(+) silicon, respectively. These values remain constant after thermal treatment up to at least 500 C. A barrier height of 0.61 V was measured on n-type silicon.

  18. Hydrogenated amorphous silicon deposited by ion-beam sputtering

    Science.gov (United States)

    Lowe, V. E.; Henin, N.; Tu, C.-W.; Tavakolian, H.; Sites, J. R.

    1981-01-01

    Hydrogenated amorphous silicon films 1/2 to 1 micron thick were deposited on metal and glass substrates using ion-beam sputtering techniques. The 800 eV, 2 mA/sq cm beam was a mixture of argon and hydrogen ions. The argon sputtered silicon from a pure (7.6 cm) single crystal wafer, while the hydrogen combined with the sputtered material during the deposition. Hydrogen to argon pressure ratios and substrate temperatures were varied to minimize the defect state density in the amorphous silicon. Characterization was done by electrical resistivity, index of refraction and optical absorption of the films.

  19. CURRENT PATH IN AMORPHOUS-SILICON FIELD EFFECT TRANSISTORS

    OpenAIRE

    M. MATSUMURA; Kuno, S.; Uchida, Y.

    1981-01-01

    On-resistance of amorphous-silicon field effect transistors with staggered electrodes was investigated. It was found that dependences of the on-resistance on geometrical parameters were classified into two groups. The origin was attributed to the residual resistance between the n+ electrode and the channel which was formed at the silicon-silicon dioxide interface. The resistance was analyzed by taking space charge effect into account, and we found that it changes in accordance with sample pre...

  20. Determination of the detective quantum efficiency of a prototype, megavoltage indirect detection, active matrix flat-panel imager.

    Science.gov (United States)

    El-Mohri, Y; Jee, K W; Antonuk, L E; Maolinbay, M; Zhao, Q

    2001-12-01

    After years of aggressive development, active matrix flat-panel imagers (AMFPIs) have recently become commercially available for radiotherapy imaging. In this paper we report on a comprehensive evaluation of the signal and noise performance of a large-area prototype AMFPI specifically developed for this application. The imager is based on an array of 512 x 512 pixels incorporating amorphous silicon photodiodes and thin-film transistors offering a 26 x 26 cm2 active area at a pixel pitch of 508 microm. This indirect detection array was coupled to various x-ray converters consisting of a commercial phosphor screen (Lanex Fast B, Lanex Regular, or Lanex Fine) and a 1 mm thick copper plate. Performance of the imager in terms of measured sensitivity, modulation transfer function (MTF), noise power spectra (NPS), and detective quantum efficiency (DQE) is reported at beam energies of 6 and 15 MV and at doses of 1 and 2 monitor units (MU). In addition, calculations of system performance (NPS, DQE) based on cascaded-system formalism were reported and compared to empirical results. In these calculations, the Swank factor and spatial energy distributions of secondary electrons within the converter were modeled by means of EGS4 Monte Carlo simulations. Measured MTFs of the system show a weak dependence on screen type (i.e., thickness), which is partially due to the spreading of secondary radiation. Measured DQE was found to be independent of dose for the Fast B screen, implying that the imager is input-quantum-limited at 1 MU, even at an extended source-to-detector distance of 200 cm. The maximum DQE obtained is around 1%--a limit imposed by the low detection efficiency of the converter. For thinner phosphor screens, the DQE is lower due to their lower detection efficiencies. Finally, for the Fast B screen, good agreement between calculated and measured DQE was observed. PMID:11797959

  1. Determination of the detective quantum efficiency of a prototype, megavoltage indirect detection, active matrix flat-panel imager

    International Nuclear Information System (INIS)

    After years of aggressive development, active matrix flat-panel imagers (AMFPIs) have recently become commercially available for radiotherapy imaging. In this paper we report on a comprehensive evaluation of the signal and noise performance of a large-area prototype AMFPI specifically developed for this application. The imager is based on an array of 512x512 pixels incorporating amorphous silicon photodiodes and thin-film transistors offering a 26x26 cm2 active area at a pixel pitch of 508 μm. This indirect detection array was coupled to various x-ray converters consisting of a commercial phosphor screen (Lanex Fast B, Lanex Regular, or Lanex Fine) and a 1 mm thick copper plate. Performance of the imager in terms of measured sensitivity, modulation transfer function (MTF), noise power spectra (NPS), and detective quantum efficiency (DQE) is reported at beam energies of 6 and 15 MV and at doses of 1 and 2 monitor units (MU). In addition, calculations of system performance (NPS, DQE) based on cascaded-system formalism were reported and compared to empirical results. In these calculations, the Swank factor and spatial energy distributions of secondary electrons within the converter were modeled by means of EGS4 Monte Carlo simulations. Measured MTFs of the system show a weak dependence on screen type (i.e., thickness), which is partially due to the spreading of secondary radiation. Measured DQE was found to be independent of dose for the Fast B screen, implying that the imager is input-quantum-limited at 1 MU, even at an extended source-to-detector distance of 200 cm. The maximum DQE obtained is around 1%--a limit imposed by the low detection efficiency of the converter. For thinner phosphor screens, the DQE is lower due to their lower detection efficiencies. Finally, for the Fast B screen, good agreement between calculated and measured DQE was observed

  2. ELA-beam shaping systems for flat panel display prepared by LTPS%用于平板显示 LTPS制备的 ELA光束整形系统

    Institute of Scientific and Technical Information of China (English)

    尹广玥; 游利兵; 方晓东

    2016-01-01

    介绍了多晶硅薄膜较非晶硅薄膜在平板显示领域的优势以及准分子激光晶化制备多晶硅膜的结晶过程。介绍了透镜阵列实现匀光的原理。阐述了典型的准分子激光退火线型光束整形系统的扩束、匀光、投影等结构。并介绍了连续横向固化技术在准分子激光制备低温多晶硅领域的应用。讨论了准分子激光退火光学系统的发展现状,指出了其在平板显示行业的重要意义。%The advantages to poly silicon film instead of amorphous silicon film in the field of flat panel display were introduced .Crystallization process of poly silicon film by using excimer laser crystallization system was studied .The principle of how lens array achieve the uniformity of output laser energy density was described .The structure of typical excimer laser annealing(ELA) line beam shaping system, which included beam expanding unit , beam energy homogenizing unit , projection unit and so on was focused on .Finally the application of sequential lateral solidification technology in the area of low temperature poly silicon ( LTPS ) using excimer laser nnealing was introduced .The status of ELA optical system was discussed and its significance in flat panel display industry was pointed out .

  3. Influence of microstructure and hydrogen concentration on amorphous silicon crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Budini, N., E-mail: nbudini@intec.unl.edu.a [Instituto de Desarrollo Tecnologico para la Industria Quimica, UNL-CONICET, Gueemes 3450, S3000GLN Santa Fe (Argentina); Rinaldi, P.A. [Instituto de Desarrollo Tecnologico para la Industria Quimica, UNL-CONICET, Gueemes 3450, S3000GLN Santa Fe (Argentina); Schmidt, J.A.; Arce, R.D.; Buitrago, R.H. [Instituto de Desarrollo Tecnologico para la Industria Quimica, UNL-CONICET, Gueemes 3450, S3000GLN Santa Fe (Argentina); Facultad de Ingenieria Quimica, UNL, Santiago del Estero 2829, S3000AOM Santa Fe (Argentina)

    2010-07-01

    Hydrogenated amorphous silicon samples were deposited on glass substrates at different temperatures by high frequency plasma-enhanced chemical vapor deposition. In this way, samples with different hydrogen concentrations and structures were obtained. The transition from an amorphous to a crystalline material, induced by a four-step thermal annealing sequence, has been followed. Effusion of hydrogen from the films plays an important role in the nucleation and growth mechanisms of crystalline silicon grains. Measurements of hydrogen concentrations, Raman scattering, X-ray diffraction and UV reflectance showed that an enhanced crystallization was obtained on samples deposited at lower substrate temperatures. A correlation between these measurements allows to analyze the evolution of structural properties of the samples. The presence of voids in the material, related to disorder in the amorphous matrix, results in a better quality of the resulting nanocrystalline silicon thin films.

  4. Influence of microstructure and hydrogen concentration on amorphous silicon crystallization

    International Nuclear Information System (INIS)

    Hydrogenated amorphous silicon samples were deposited on glass substrates at different temperatures by high frequency plasma-enhanced chemical vapor deposition. In this way, samples with different hydrogen concentrations and structures were obtained. The transition from an amorphous to a crystalline material, induced by a four-step thermal annealing sequence, has been followed. Effusion of hydrogen from the films plays an important role in the nucleation and growth mechanisms of crystalline silicon grains. Measurements of hydrogen concentrations, Raman scattering, X-ray diffraction and UV reflectance showed that an enhanced crystallization was obtained on samples deposited at lower substrate temperatures. A correlation between these measurements allows to analyze the evolution of structural properties of the samples. The presence of voids in the material, related to disorder in the amorphous matrix, results in a better quality of the resulting nanocrystalline silicon thin films.

  5. GHz-rate optical parametric amplifier in hydrogenated amorphous silicon

    International Nuclear Information System (INIS)

    We demonstrate optical parametric amplification operating at GHz-rates at telecommunications wavelengths using a hydrogenated amorphous silicon waveguide through the nonlinear optical process of four-wave mixing. We investigate how the parametric amplification scales with repetition rate. The ability to achieve amplification at GHz-repetition rates shows hydrogenated amorphous silicon’s potential for telecommunication applications and a GHz-rate optical parametric oscillator. (paper)

  6. Amorphous silicon thin film transistor active-matrix organic light-emitting diode displays fabricated on flexible substrates

    Science.gov (United States)

    Nichols, Jonathan A.

    Organic light-emitting diode (OLED) displays are of immense interest because they have several advantages over liquid crystal displays, the current dominant flat panel display technology. OLED displays are emissive and therefore are brighter, have a larger viewing angle, and do not require backlights and filters, allowing thinner, lighter, and more power efficient displays. The goal of this work was to advance the state-of-the-art in active-matrix OLED display technology. First, hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) active-matrix OLED pixels and arrays were designed and fabricated on glass substrates. The devices operated at low voltages and demonstrated that lower performance TFTs could be utilized in active-matrix OLED displays, possibly allowing lower cost processing and the use of polymeric substrates. Attempts at designing more control into the display at the pixel level were also made. Bistable (one bit gray scale) active-matrix OLED pixels and arrays were designed and fabricated. Such pixels could be used in novel applications and eventually help reduce the bandwidth requirements in high-resolution and large-area displays. Finally, a-Si:H TFT active-matrix OLED pixels and arrays were fabricated on a polymeric substrate. Displays fabricated on a polymeric substrates would be lightweight; flexible, more rugged, and potentially less expensive to fabricate. Many of the difficulties associated with fabricating active-matrix backplanes on flexible substrates were studied and addressed.

  7. Surface orientation effects in crystalline-amorphous silicon interfaces

    OpenAIRE

    Nolan, Michael; Legesse, Merid; Fagas, Giorgos

    2012-01-01

    In this paper we present the results of empirical potential and density functional theory (DFT) studies of models of interfaces between amorphous silicon (a-Si) or hydrogenated amorphous Si (a-Si:H) and crystalline Si (c-Si) on three unreconstructed silicon surfaces, namely (100), (110) and (111). In preparing models of a-Si on c-Si, melting simulations are run with classical molecular dynamics (MD) at 3000 K for 10 ps to melt part of the crystalline surface and the structure is quenched to 3...

  8. Mechanism of Germanium-Induced Perimeter Crystallization of Amorphous Silicon

    OpenAIRE

    Hakim, M. M. A.; Ashburn, P.

    2007-01-01

    We report a study aimed at highlighting the mechanism of a new amorphous silicon crystallization phenomenon that originates from the perimeter of a germanium layer during low-temperature annealing (500°C). Results are reported on doped and undoped amorphous silicon films, with thicknesses in the range 40–200 nm, annealed at a temperature of 500 or 550°C. A comparison is made of crystallization arising from Ge and SiGe layers and the role of damage from a high-dose fluorine implant is investig...

  9. Potential of amorphous and microcrystalline silicon solar cells

    OpenAIRE

    Meier, Johannes; Spitznagel, J.; Kroll, U.; Bucher, C.; Faÿ Sylvie; Moriarty, T.; Shah, Arvind

    2008-01-01

    Low pressure chemical vapour deposition (LP-CVD) ZnO as front transparent conductive oxide (TCO), developed at IMT, has excellent light-trapping properties for a-Si:H p-i-n single-junction and ‘micromorph’ (amorphous/microcrystalline silicon) tandem solar cells. A stabilized record efficiency of 9.47% has independently been confirmed by NREL for an amorphous silicon single-junction p-i-n cell (~1 cm2) deposited on LP-CVD ZnO coated glass. Micromorph tandem cells with an initial efficiency of ...

  10. Pyrolytic transformation from polydihydrosilane to hydrogenated amorphous silicon film

    International Nuclear Information System (INIS)

    The fabrication of thin film silicon devices based on solution processes rather than on conventional vacuum processes is of substantial interest since cost reductions may result. Using a solution process, we coated substrates with polydihydrosilane solution and studied the pyrolytic transformation of the material into hydrogenated amorphous silicon (a-Si:H). From thermal gravimetry and differential thermal analysis data a significant reduction in weight of the material and a construction of Si-Si bonds are concluded for the pyrolysis temperature Tp = 270 to 360 °C. The appearance of amorphous silicon phonon bands in Raman spectra for films prepared at Tp ≥ 330 °C suggests the construction of a three-dimensional amorphous silicon network. Films prepared at Tp ≥ 360 °C exhibit a hydrogen content near 10 at.% and an optical gap near 1.6 eV similar to device-grade vacuum processed a-Si:H. However, the infrared microstructure factor, the spin density, and the photosensitivity require significant improvements. - Highlights: ► We fabricate hydrogenated amorphous silicon (a-Si:H) films by a solution process. ► The a-Si:H films are prepared by pyrolytic transformation in polysilane solution. ► We investigate basic properties in relation to the pyrolysis temperature. ► Raman spectra, hydrogen content, and optical gap are similar to device-grade a-Si:H. ► Microstructure factor, spin density, and photoconductivity show poor quality.

  11. Pyrolytic transformation from polydihydrosilane to hydrogenated amorphous silicon film

    OpenAIRE

    Masuda, Takashi; Matsuki, Yasuo; Shimoda, Tatsuya

    2012-01-01

    The fabrication of thin film silicon devices based on solution processes rather than on conventional vacuum processes is of substantial interest since cost reductions may result. Using a solution process, we coated substrates with polydihydrosilane solution and studied the pyrolytic transformation of the material into hydrogenated amorphous silicon (a-Si:H). From thermal gravimetry and differential thermal analysis data a significant reduction in weight of the material and a construction of S...

  12. Threshold irradiation dose for amorphization of silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Snead, L.L.; Zinkle, S.J. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be {approximately}0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10{sup {minus}3} dpa/s and with fission neutrons irradiated at 1 x 10{sup {minus}6} dpa/s irradiated to 15 dpa in the temperature range of {approximately}340 {+-} 10K.

  13. Reconstruction of Spectra Using X-ray Flat Panel Detector; Reconstruccion de Espectros de Rayos X Utilizando un Detector Flat Panel

    Energy Technology Data Exchange (ETDEWEB)

    Gallardo, S.; Querol, A.; Pozuelo, F.; Juste, B.; Rodenas, J.; Verdu, G.

    2013-07-01

    In this work, we used a flat panel detector with a wedge of PMMA for absorbed dose curve for given working conditions of X-ray tube The relationship between absorbed dose curve recorded by the flat panel and primary X-ray spectrum is defined by a response function that can be obtained using the Monte Carlo method, namely the MCNP5 code. However there are some problems that affect the applicability of this method such as: flat panel characteristics and the characteristics of the physical process (ill-conditioned problem). Both aspects are discussed in this paper.

  14. Nanoindentation-induced amorphization in silicon carbide

    Science.gov (United States)

    Szlufarska, Izabela; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya

    2004-07-01

    The nanoindentation-induced amorphization in SiC is studied using molecular dynamics simulations. The load-displacement response shows an elastic shoulder followed by a plastic regime consisting of a series of load drops. Analyses of bond angles, local pressure, and shear stress, and shortest-path rings show that these drops are related to dislocation activities under the indenter. We show that amorphization is driven by coalescence of dislocation loops and that there is a strong correlation between load-displacement response and ring distribution.

  15. First-principles study of hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Jarolimek, K.; Groot, R.A. de; Wijs, G.A. de; Zeman, M.

    2009-01-01

    We use a molecular-dynamics simulation within density-functional theory to prepare realistic structures of hydrogenated amorphous silicon. The procedure consists of heating a crystalline structure of Si64H8 to 2370 K, creating a liquid and subsequently cooling it down to room temperature. The effect

  16. Photocurrent images of amorphous-silicon solar-cell modules

    Science.gov (United States)

    Kim, Q.; Shumka, A.; Trask, J.

    1985-01-01

    Results obtained in applying the unique characteristics of the solar cell laser scanner to investigate the defects and quality of amorphous silicon cells are presented. It is concluded that solar cell laser scanners can be effectively used to nondestructively test not only active defects but also the cell quality and integrity of electrical contacts.

  17. Long-term stability of amorphous-silicon modules

    Science.gov (United States)

    Ross, R. G., Jr.

    1986-01-01

    The Jet Propulsion Laboratory (JPL) program of developing qualification tests necessary for amorphous silicon modules, including appropriate accelerated environmental tests reveal degradation due to illumination. Data were given which showed the results of temperature-controlled field tests and accelerated tests in an environmental chamber.

  18. Integral bypass diodes in an amorphous silicon alloy photovoltaic module

    Science.gov (United States)

    Hanak, J. J.; Flaisher, H.

    1991-01-01

    Thin-film, tandem-junction, amorphous silicon (a-Si) photovoltaic modules were constructed in which a part of the a-Si alloy cell material is used to form bypass protection diodes. This integral design circumvents the need for incorporating external, conventional diodes, thus simplifying the manufacturing process and reducing module weight.

  19. Atomistic models of hydrogenated amorphous silicon nitride from first principles

    NARCIS (Netherlands)

    Jarolimek, K.; De Groot, R.A.; De Wijs, G.A.; Zeman, M.

    2010-01-01

    We present a theoretical study of hydrogenated amorphous silicon nitride (a-SiNx:H), with equal concentrations of Si and N atoms (x=1), for two considerably different densities (2.0 and 3.0 g/cm3). Densities and hydrogen concentration were chosen according to experimental data. Using first-principle

  20. Atomistic models of hydrogenated amorphous silicon nitride from first principles

    NARCIS (Netherlands)

    Jarolimek, K.; Groot, R.A. de; Wijs, G.A. de; Zeman, M.

    2010-01-01

    We present a theoretical study of hydrogenated amorphous silicon nitride (a-SiNx:H), with equal concentrations of Si and N atoms (x=1), for two considerably different densities (2.0 and 3.0 g/cm3). Densities and hydrogen concentration were chosen according to experimental data. Using first-principle

  1. Supercontinuum generation in hydrogenated amorphous silicon waveguides at telecommunication wavelengths.

    Science.gov (United States)

    Safioui, Jassem; Leo, François; Kuyken, Bart; Gorza, Simon-Pierre; Selvaraja, Shankar Kumar; Baets, Roel; Emplit, Philippe; Roelkens, Gunther; Massar, Serge

    2014-02-10

    We report supercontinuum (SC) generation centered on the telecommunication C-band (1550 nm) in CMOS compatible hydrogenated amorphous silicon waveguides. A broadening of more than 550 nm is obtained in 1cm long waveguides of different widths using as pump picosecond pulses with on chip peak power as low as 4 W.

  2. Nanoscale Transformations in Metastable, Amorphous, Silicon-Rich Silica.

    Science.gov (United States)

    Mehonic, Adnan; Buckwell, Mark; Montesi, Luca; Munde, Manveer Singh; Gao, David; Hudziak, Stephen; Chater, Richard J; Fearn, Sarah; McPhail, David; Bosman, Michel; Shluger, Alexander L; Kenyon, Anthony J

    2016-09-01

    Electrically biasing thin films of amorphous, substoichiometric silicon oxide drives surprisingly large structural changes, apparent as density variations, oxygen movement, and ultimately, emission of superoxide ions. Results from this fundamental study are directly relevant to materials that are increasingly used in a range of technologies, and demonstrate a surprising level of field-driven local reordering of a random oxide network.

  3. Amorphous silicon carbide coatings for extreme ultraviolet optics

    Science.gov (United States)

    Kortright, J. B.; Windt, David L.

    1988-01-01

    Amorphous silicon carbide films formed by sputtering techniques are shown to have high reflectance in the extreme ultraviolet spectral region. X-ray scattering verifies that the atomic arrangements in these films are amorphous, while Auger electron spectroscopy and Rutherford backscattering spectroscopy show that the films have composition close to stoichiometric SiC, although slightly C-rich, with low impurity levels. Reflectance vs incidence angle measurements from 24 to 1216 A were used to derive optical constants of this material, which are presented here. Additionally, the measured extreme ultraviolet efficiency of a diffraction grating overcoated with sputtered amorphous silicon carbide is presented, demonstrating the feasibility of using these films as coatings for EUV optics.

  4. EMI investigation and modeling of a flat panel display

    Science.gov (United States)

    Shinde, Satyajeet

    It is often important to carry out EMI analysis in the design phase of an electronic product to predict the radiated emissions. An EMI analysis is important to predict if the product complies with the FCC regulations as well as to gain an understanding of the noise coupling and radiation mechanisms. EMI analysis and prediction of radiated emissions in electronic products that have an electrically large chassis, pose a challenge due to the presence of multiple resonant structures and noise-coupling mechanisms. The study focusses on the investigation of the main noise coupling mechanisms, the approach and methods used for the modeling of a flat panel display. Full-wave simulation models are a powerful tool for the prediction of radiated emissions and the visualization of coupling paths within the product. The first part deals with the measurement of radiated emissions from the display under standard test conditions and the identification of the main noise sources using near-field scanning. The contribution of the chassis components - frame, back cover and the back panel, to the radiated emission is analyzed using shielding measurements. Noise coupling from the main board, flex cables, display driver boards and the display is analyzed from measurements. The second part deals with the full-wave modeling of the components - main board, flex cables, chassis and the display driver boards. The modeling approach is demonstrated by highlighting some of the challenges in modeling larger structures having many details. The simulation model contains the main components of the TV that contribute to far-field radiation. The full-wave modeling is done using the CST Microwave Studio. Two sets of simulation models are described - the common mode models and the complete models. The use of the common mode models for the identification of the resonant structures is demonstrated. The far-field radiated emissions along with the coupling mechanism within the flat panel display can be

  5. Raman and ellipsometric characterization of hydrogenated amorphous silicon thin films

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Hydrogenated amorphous silicon (a-Si:H) thin films were deposited by plasma-enhanced vapor deposition (PECVD) at different silane temperatures (Tg) before glow-discharge. The effect of Tg on the amorphous network and optoelectronic properties of the films has been investigated by Raman scattering spectra, ellipsometric transmittance spectra, and dark conductivity measurement, respectively. The results show that the increase in Tg leads to an improved ordering of amorphous network on the short and intermediate scales and an increase of both refractive index and absorption coefficient in a-Si:H thin films. It is indicated that the dark conductivity increases by two orders of magnitude when Tg is raised from room temperature (RT) to 433 K. The continuous ordering of amorphous network of a-Si:H thin films deposited at a higher Tg is the main cause for the increase of dark conductivity.

  6. Raman and ellipsometric characterization of hydrogenated amorphous silicon thin films

    Institute of Scientific and Technical Information of China (English)

    LIAO NaiMan; LI Wei; KUANG YueJun; JIANG YaDong; LI ShiBin; WU ZhiMing; QI KangCheng

    2009-01-01

    Hydrogenated amorphous silicon (a-Si:H) thin films were deposited by plasma-enhanced vapor depo-sition (PEOVD) at different silane temperatures (Tg) before glow-discharge. The effect of Tg on the amorphous network and optoelectronic properties of the films has been investigated by Raman scat-tering spectra, ellipsometric transmittance spectra, and dark conductivity measurement, respectively. The results show that the increase in Tg leads to an improved ordering of amorphous network on the short and intermediate scales and an increase of both refractive index and absorption coefficient in a-Si:H thin films. It is indicated that the dark conductivity increases by two orders of magnitude when Tg is raised from room temperature (RT) to 433 K. The continuous ordering of amorphous network of a-Si:H thin films deposited at a higher Tg is the main cause for the increase of dark conductivity.

  7. Hydrogen-free amorphous silicon with no tunneling states.

    Science.gov (United States)

    Liu, Xiao; Queen, Daniel R; Metcalf, Thomas H; Karel, Julie E; Hellman, Frances

    2014-07-11

    The ubiquitous low-energy excitations, known as two-level tunneling systems (TLSs), are one of the universal phenomena of amorphous solids. Low temperature elastic measurements show that e-beam amorphous silicon (a-Si) contains a variable density of TLSs which diminishes as the growth temperature reaches 400 °C. Structural analyses show that these a-Si films become denser and more structurally ordered. We conclude that the enhanced surface energetics at a high growth temperature improved the amorphous structural network of e-beam a-Si and removed TLSs. This work obviates the role hydrogen was previously thought to play in removing TLSs in the hydrogenated form of a-Si and suggests it is possible to prepare "perfect" amorphous solids with "crystal-like" properties for applications. PMID:25062205

  8. Performance of a volumetric CT scanner based upon a flat-panel imager

    Science.gov (United States)

    Jaffray, David A.; Siewerdsen, Jeffrey H.; Drake, Douglas G.

    1999-05-01

    To characterize the performance of a cone-beam computed tomography (CBCT) imaging system based upon an indirect- detection, amorphous silicon flat-panel imager (FPI). Tomographic images obtained using the FPI are presented, and the signal and noise characteristics of reconstructed images are quantified. Specifically, the spatial uniformity, CT linearity, contrast performance, noise characteristics, spatial resolution, and soft-tissue visualization are examined. Finally, the performance of the FPI-based CT system is discussed in relation to existing clinical technologies. A table-top measurements system was constructed to allow investigation of FPI performance in CBCT within a precisely controlled and reproducible geometry. The FPI incorporates a 512 X 512 active matrix array of a-Si:H thin-film transistors and photodiodes in combination with an overlying (133 mg/cm2 Gd2O2S:Tb) phosphor. The commercially available prototype FPI has a pixel pitch of 400 micrometer, a fill factor of approximately 80%, can be read at a maximum frame rate of 5 fps, and provides 16 bit digitization. Mounted upon an optical bench are the x-ray tube (in a rigid support frame), the object to be imaged (upon a precision rotation/translation table), and the FPI (mounted upon a precision translation table). The entire setup is directed under computer control, and volumetric imaging is accomplished by rotating the object incrementally over 360 degrees, delivering a radiographic x-ray pulse (e.g., 100 - 130 kVp, approximately 0.1 - 10 mAs), and acquiring a projection image at each increment. Prior to reconstruction, dark and flood- field corrections are applied to account for stationary nonuniformities in detector response and dark current. Tomographic images are reconstructed from the projections using the Feldkamp filtered back-projection algorithm for CBCT. The linearity of the CBCT system was compared to that of a commercial scanner (Philips SR-7000) using materials ranging in CT number from

  9. Heat-Induced Agglomeration of Amorphous Silicon Nanoparticles Toward the Formation of Silicon Thin Film.

    Science.gov (United States)

    Jang, Bo Yun; Kim, Ja Young; Seo, Gyeongju; Shin, Chae-Ho; Ko, Chang Hyun

    2016-01-01

    The thermal behavior of silicon nanoparticles (Si NPs) was investigated for the preparation of silicon thin film using a solution process. TEM analysis of Si NPs, synthesized by inductively coupled plasma, revealed that the micro-structure of the Si NPs was amorphous and that the Si NPs had melted and merged at a comparatively low temperature (~750 °C) considering bulk melting temperature of silicon (1414 °C). A silicon ink solution was prepared by dispersing amorphous Si NPs in propylene glycol (PG). It was then coated onto a silicon wafer and a quartz plate to form a thin film. These films were annealed in a vacuum or in an N₂ environment to increase their film density. N2 annealing at 800 °C and 1000 °C induced the crystallization of the amorphous thin film. An elemental analysis by the SIMS depth profile showed that N₂annealing at 1000 °C for 180 min drastically reduced the concentrations of carbon and oxygen inside the silicon thin film. These results indicate that silicon ink prepared using amorphous Si NPs in PG can serve as a proper means of preparing silicon thin film via solution process. PMID:27398566

  10. High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Schuttauf, J.A.; van der Werf, C.H.M.; Kielen, I.M.; van Sark, W.G.J.H.M.; Rath, J.K.

    2011-01-01

    We investigate the influence of thermal annealing on the passivation quality of crystalline silicon (c-Si) surfaces by intrinsic and n-type hydrogenated amorphous silicon (a-Si:H) films. For temperatures up to 255 C, we find an increase in surface passivation quality, corresponding to a decreased da

  11. Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

    DEFF Research Database (Denmark)

    Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith;

    2004-01-01

    Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss. A ...

  12. Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film

    Institute of Scientific and Technical Information of China (English)

    陈长勇; 陈维德; 李国华; 宋淑芳; 丁琨; 许振嘉

    2003-01-01

    An investigation on the correlation between amorphous Si (a-Si) domains and Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H) film is presented. On one hand, a-Si domains provide sufficient carriers for Er3+ carrier-mediated excitation which has been proved to be the highest excitation path for Er3+ ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiOx) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er3+ ions. This study provides a better understanding of the role of a-Si domains on Er3+ emission in a-Si:O:Hfilms.

  13. Role of amorphous silicon domains of Er3+ emission in the Er—doped hydrogenated amorphous silicon suboxide film

    Institute of Scientific and Technical Information of China (English)

    ChenChang-Yong; ChenWei-De; LeGuo-Hua; SongShu-Fang; DingKun; XuZhen-Jia

    2003-01-01

    An investigation on the correlation between amorphous Si(a-Si) domains and Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H) film is presented. On one hand, a-Si domains provide sufficient carrlers for Er3+ carrier-mediated excitation which has been proved to be the highest excitation path for Er3+ ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiOx) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er3+ ions. This study provides a better understanding of the role of a-Si domains on Er3+ emission in a-Si:O:H films.

  14. Multi-band silicon quantum dots embedded in an amorphous matrix of silicon carbide

    Science.gov (United States)

    Chang, Geng-rong; Ma, Fei; Ma, Da-yan; Xu, Ke-wei

    2010-11-01

    Silicon quantum dots embedded in an amorphous matrix of silicon carbide were realized by a magnetron co-sputtering process and post-annealing. X-ray photoelectron spectroscopy, glancing x-ray diffraction, Raman spectroscopy and high-resolution transmission electron microscopy were used to characterize the chemical composition and the microstructural properties. The results show that the sizes and size distribution of silicon quantum dots can be tuned by changing the annealing atmosphere and the atom ratio of silicon and carbon in the matrix. A physicochemical mechanism is proposed to demonstrate this formation process. Photoluminescence measurements indicate a multi-band configuration due to the quantum confinement effect of silicon quantum dots with different sizes. The PL spectra are further widened as a result of the existence of amorphous silicon quantum dots. This multi-band configuration would be extremely advantageous in improving the photoelectric conversion efficiency of photovoltaic solar cells.

  15. Plasma Deposition of Doped Amorphous Silicon

    Science.gov (United States)

    Calcote, H. F.

    1985-01-01

    Pair of reports present further experimental details of investigation of plasma deposition of films of phosphorous-doped amosphous silicon. Probe measurements of electrical resistance of deposited films indicated films not uniform. In general, it appeared that resistance decreased with film thickness.

  16. Electrical Characterization of Amorphous Silicon Nitride Passivation Layers for Crystalline Silicon Solar Cells

    OpenAIRE

    Helland, Susanne

    2011-01-01

    High quality surface passivation is important for the reduction of recombination losses in solar cells. In this work, the passivation properties of amorphous hydrogenated silicon nitride for crystalline silicon solar cells were investigated, using electrical characterization, lifetime measurements and spectroscopic ellipsometry. Thin films of varying composition were deposited on p-type monocrystalline silicon wafers by plasma enhanced chemical vapor deposition (PECVD). Highest quality surfac...

  17. Kirchhoff?s generalised law applied to amorphous silicon / crystalline silicon heterostructures

    OpenAIRE

    Brüggemann, Rudolf

    2009-01-01

    Abstract The electro- and photoluminescence spectra of amorphous silicon / crystalline silicon heterostructures and solar cells are determined by emission from the crystalline-silicon layer and are computed with Kirchhoff?s generalised law. The interface defect density strongly influences the luminescence yield which may be used to monitor the interface quality. Based on a comparison between numerical and analytically determined spectra, the temperature dependence of experimental e...

  18. Light-induced metastable structural changes in hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Fritzsche, H. [Univ. of Chicago, IL (United States)

    1996-09-01

    Light-induced defects (LID) in hydrogenated amorphous silicon (a-Si:H) and its alloys limit the ultimate efficiency of solar panels made with these materials. This paper reviews a variety of attempts to find the origin of and to eliminate the processes that give rise to LIDs. These attempts include novel deposition processes and the reduction of impurities. Material improvements achieved over the past decade are associated more with the material`s microstructure than with eliminating LIDs. We conclude that metastable LIDs are a natural by-product of structural changes which are generally associated with non-radiative electron-hole recombination in amorphous semiconductors.

  19. Pyrolytic transformation from polydihydrosilane to hydrogenated amorphous silicon film

    Energy Technology Data Exchange (ETDEWEB)

    Masuda, Takashi, E-mail: mtakashi@jaist.ac.jp [Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-13 Asahidai, Nomi, Ishikawa, 923-1211 (Japan); Matsuki, Yasuo [Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-13 Asahidai, Nomi, Ishikawa, 923-1211 (Japan); Yokkaichi Research Center, JSR Corporation, 100 Kawajiri-cho, Yokkaichi, Mie, 510-8552 (Japan); Shimoda, Tatsuya [Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-13 Asahidai, Nomi, Ishikawa, 923-1211 (Japan); School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292 (Japan)

    2012-08-31

    The fabrication of thin film silicon devices based on solution processes rather than on conventional vacuum processes is of substantial interest since cost reductions may result. Using a solution process, we coated substrates with polydihydrosilane solution and studied the pyrolytic transformation of the material into hydrogenated amorphous silicon (a-Si:H). From thermal gravimetry and differential thermal analysis data a significant reduction in weight of the material and a construction of Si-Si bonds are concluded for the pyrolysis temperature T{sub p} = 270 to 360 Degree-Sign C. The appearance of amorphous silicon phonon bands in Raman spectra for films prepared at T{sub p} {>=} 330 Degree-Sign C suggests the construction of a three-dimensional amorphous silicon network. Films prepared at T{sub p} {>=} 360 Degree-Sign C exhibit a hydrogen content near 10 at.% and an optical gap near 1.6 eV similar to device-grade vacuum processed a-Si:H. However, the infrared microstructure factor, the spin density, and the photosensitivity require significant improvements. - Highlights: Black-Right-Pointing-Pointer We fabricate hydrogenated amorphous silicon (a-Si:H) films by a solution process. Black-Right-Pointing-Pointer The a-Si:H films are prepared by pyrolytic transformation in polysilane solution. Black-Right-Pointing-Pointer We investigate basic properties in relation to the pyrolysis temperature. Black-Right-Pointing-Pointer Raman spectra, hydrogen content, and optical gap are similar to device-grade a-Si:H. Black-Right-Pointing-Pointer Microstructure factor, spin density, and photoconductivity show poor quality.

  20. On the Effect of the Amorphous Silicon Microstructure on the Grain Size of Solid Phase Crystallized Polycrystalline Silicon

    NARCIS (Netherlands)

    Sharma, K.; Branca, A.; Illiberi, A.; Tichelaar, F. D.; Creatore, M.; M. C. M. van de Sanden,

    2011-01-01

    In this paper the effect of the microstructure of remote plasma-deposited amorphous silicon films on the grain size development in polycrystalline silicon upon solid-phase crystallization is reported. The hydrogenated amorphous silicon films are deposited at different microstructure parameter values

  1. Investigation of the crystallization process of amorphous silicon thin films%非晶硅薄膜晶化过程的研究

    Institute of Scientific and Technical Information of China (English)

    黄木香; 杨琳; 刘玉琪; 王江涌

    2012-01-01

    Polycrystalline silicon thin film is a high quality material for micro - electronic components, thin film transistors and large flat-panel LCD displays because of its high electrical mobility and stable photoelectric properties. Moreover, it has been regarded as a candidate material for making high efficiency, lower energy consumption and optimized thin film solar cells. Therefore, how to fabricate polycrystalline silicon thin film is a very meaningful research topic. Solid phase crystallization is a usual method to fabricate polycrystalline silicon thin film, by high temperature annealing to transfer amorphous film to polycrystalline phase, In this paper, the solid phase crystallization process of amorphous silicon thin films fabricated by different techniques are studied systematically by XRD and Raman spectroscopy.%多晶硅薄膜具有较高的电迁移率和稳定的光电性能,是制备微电子器件、薄膜晶体管、大面积平板液晶显示的优质材料.多晶硅薄膜被公认为是制备高效、低耗、最理想的薄膜太阳能电池的材料.因此,如何制备多晶硅薄膜是一个非常有意义的研究课题.固相法是制备多晶硅薄膜的一种常用方法,它是在高温退火的条件下,使非晶硅薄膜通过固相相变而成为多晶硅薄膜.本文采用固相法,利用X-ray衍射及拉曼光谱,对用不同方法制备的非晶硅薄膜的晶化过程进行了系统地研究.

  2. Excimer laser crystallization of amorphous silicon on metallic substrate

    Science.gov (United States)

    Delachat, F.; Antoni, F.; Slaoui, A.; Cayron, C.; Ducros, C.; Lerat, J.-F.; Emeraud, T.; Negru, R.; Huet, K.; Reydet, P.-L.

    2013-06-01

    An attempt has been made to achieve the crystallization of silicon thin film on metallic foils by long pulse duration excimer laser processing. Amorphous silicon thin films (100 nm) were deposited by radiofrequency magnetron sputtering on a commercial metallic alloy (N42-FeNi made of 41 % of Ni) coated by a tantalum nitride (TaN) layer. The TaN coating acts as a barrier layer, preventing the diffusion of metallic impurities in the silicon thin film during the laser annealing. An energy density threshold of 0.3 J cm-2, necessary for surface melting and crystallization of the amorphous silicon, was predicted by a numerical simulation of laser-induced phase transitions and witnessed by Raman analysis. Beyond this fluence, the melt depth increases with the intensification of energy density. A complete crystallization of the layer is achieved for an energy density of 0.9 J cm-2. Scanning electron microscopy unveils the nanostructuring of the silicon after laser irradiation, while cross-sectional transmission electron microscopy reveals the crystallites' columnar growth.

  3. Hydrogen, microstructure and defect density in hydrogenated amorphous silicon

    OpenAIRE

    Roca I Cabarrocas, Pere; Djebbour, Z.; Kleider, J.; Longeaud, C.; Mencaraglia, D.; Sib, J.; Bouizem, Y.; Thèye, M.; Sardin, G.; Stoquert, J.

    1992-01-01

    It is well established that by bonding with the dangling bonds of silicon, hydrogen reduces the density of states of amorphous silicon and renders this material suitable to electronic applications. For so-called “standard” a-Si : H films deposited by the RF glow discharge decomposition of silane at low deposition rates (≈1 Å/s) and over a large range of deposition temperatures, we observed the usual correlation between the hydrogen bonding and the defect density in the as-deposited material o...

  4. Amorphous silicon based large format uncooled FPA microbolometer technology

    Science.gov (United States)

    Schimert, T.; Brady, J.; Fagan, T.; Taylor, M.; McCardel, W.; Gooch, R.; Ajmera, S.; Hanson, C.; Syllaios, A. J.

    2008-04-01

    This paper presents recent developments in next generation microbolometer Focal Plane Array (FPA) technology at L-3 Communications Infrared Products (L-3 CIP). Infrared detector technology at L-3 CIP is based on hydrogenated amorphous silicon (a-Si:H) and amorphous silicon germanium(a-SiGe:H). Large format high performance, fast, and compact IR FPAs are enabled by a low thermal mass pixel design; favorable material properties; an advanced ROIC design; and wafer level packaging. Currently at L-3 CIP, 17 micron pixel FPA array technology including 320x240, 640 x 480 and 1024 x768 arrays is under development. Applications of these FPAs range from low power microsensors to high resolution near-megapixel imager systems.

  5. Spherical silicon photonic microcavities: From amorphous to polycrystalline

    Science.gov (United States)

    Fenollosa, R.; Garín, M.; Meseguer, F.

    2016-06-01

    Shaping silicon as a spherical object is not an obvious task, especially when the object size is in the micrometer range. This has the important consequence of transforming bare silicon material in a microcavity, so it is able to confine light efficiently. Here, we have explored the inside volume of such microcavities, both in their amorphous and in their polycrystalline versions. The synthesis method, which is based on chemical vapor deposition, causes amorphous microspheres to have a high content of hydrogen that produces an onionlike distributed porous core when the microspheres are crystallized by a fast annealing regime. This substantially influences the resonant modes. However, a slow crystallization regime does not yield pores, and produces higher-quality-factor resonances that could be fitted to the Mie theory. This allows the establishment of a procedure for obtaining size calibration standards with relative errors of the order of 0.1%.

  6. Electrochemical degradation of amorphous-silicon photovoltaic modules

    Science.gov (United States)

    Mon, G. R.; Ross, R. G., Jr.

    1985-01-01

    Techniques of module electrochemical corrosion research, developed during reliability studies of crystalline-silicon modules (C-Si), have been applied to this new investigation into amorphous-silicon (a-Si) module reliability. Amorphous-Si cells, encapsulated in the polymers polyvinyl butyral (PVB) and ethylene vinyl acetate (EVA), were exposed for more than 1200 hours in a controlled 85 C/85 percent RH environment, with a constant 500 volts applied between the cells and an aluminum frame. Plotting power output reduction versus charge transferred reveals that about 50 percent a-Si cell failures can be expected with the passage of 0.1 to 1.0 Coulomb/cm of cell-frame edge length; this threshold is somewhat less than that determined for C-Si modules.

  7. Photo stability Assessment in Amorphous-Silicon Solar Cells

    International Nuclear Information System (INIS)

    The present status of amorphous-silicon-solar-cell research and development at CIEMAT requires the possibility to characterise the devices prepared from the point of view of their stability against sunlight exposure. Therefore a set of tools providing such a capacity has been developed. Together with an introduction to photovoltaic applications of amorphous silicon and to the photodegradation problem, the present work describes the process of setting up these tools. An indoor controlled photodegradation facility has been designed and built, and a procedure has been developed for the measurement of J-V characterisation in well established conditions. This method is suitable for all kinds of solar cells, even for those for which no model is still available. The photodegradation and characterisation of some cells has allowed to validate both the new testing facility and method. (Author) 14 refs

  8. The reliability and stability of multijunction amorphous silicon PV modules

    Energy Technology Data Exchange (ETDEWEB)

    Carlson, D.E. [Solarex, Newtown, PA (United States)

    1995-11-01

    Solarex is developing a manufacturing process for the commercial production of 8 ft{sup 2} multijunction amorphous silicon (a-Si) PV modules starting in 1996. The device structure used in these multijunction modules is: glass/textured tin oxide/p-i-n/p-i-n/ZnO/Al/EVA/Tedlar where the back junction of the tandem structure contains an amorphous silicon germanium alloy. As an interim step, 4 ft{sup 2} multijunction modules have been fabricated in a pilot production mode over the last several months. The distribution of initial conversion efficiencies for an engineering run of 67 modules (4 ft{sup 2}) is shown. Measurements recently performed at NREL indicate that the actual efficiencies are about 5% higher than those shown, and thus exhibit an average initial conversion efficiency of about 9.5%. The data indicates that the process is relatively robust since there were no modules with initial efficiencies less than 7.5%.

  9. Infrared electroabsorption spectra in amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lyou, J.H.; Schiff, E.A.; Hegedus, S.S.; Guha, S.; Yang, J.

    1999-07-01

    The authors report measurements of the infrared spectrum detected by modulating the reverse-bias voltage across amorphous silicon pin solar cells and Schottky barrier diodes. They find a band with a peak energy of 0.8 eV. The existence of this band has not, to their knowledge, been reported previously. The strength of the infrared band depends linearly upon applied bias, as opposed to the quadratic dependence for interband electroabsorption in amorphous silicon. The band's peak energy agrees fairly well with the known optical transition energies for dangling bond defects, but the linear dependence on bias and the magnitude of the signal are surprising if interpreted using an analogy to interband electroabsorption. A model based on absorption by defects near the n/i interface of the diodes accounts well for the infrared spectrum.

  10. Cryogenic flat-panel gas-gap heat switch

    Science.gov (United States)

    Vanapalli, S.; Keijzer, R.; Buitelaar, P.; ter Brake, H. J. M.

    2016-09-01

    A compact additive manufactured flat-panel gas-gap heat switch operating at cryogenic temperature is reported in this paper. A guarded-hot-plate apparatus has been developed to measure the thermal conductance of the heat switch with the heat sink temperature in the range of 100-180 K. The apparatus is cooled by a two-stage GM cooler and the temperature is controlled with a heater and a braided copper wire connection. A thermal guard is mounted on the hot side of the device to confine the heat flow axially through the sample. A gas handling system allows testing the device with different gas pressures in the heat switch. Experiments are performed at various heat sink temperatures, by varying gas pressure in the gas-gap and with helium, hydrogen and nitrogen gas. The measured off-conductance with a heat sink temperature of 115 K and the hot plate at 120 K is 0.134 W/K, the on-conductance with helium and hydrogen gases at the same temperatures is 4.80 W/K and 4.71 W/K, respectively. This results in an on/off conductance ratio of 37 ± 7 and 35 ± 6 for helium and hydrogen respectively. The experimental results matches fairly well with the predicted heat conductance at cryogenic temperatures.

  11. Amorphous Silicon 16—bit Array Photodetector①

    Institute of Scientific and Technical Information of China (English)

    ZHANGShaoqiang; XUZhongyang; 等

    1997-01-01

    An amorphous silicon 16-bit array photodetector with the a-SiC/a-Si heterojunction diode is presented.The fabrication processes of the device were studied systematically.By the optimum of the diode structure and the preparation procedures,the diode with Id<10-12A/mm2 and photocurrentIp≥0.35A/W has been obtained at the wavelength of 632nm.

  12. Corrosion In Amorphous-Silicon Solar Cells And Modules

    Science.gov (United States)

    Mon, Gordon R.; Wen, Liang-Chi; Ross, Ronald G., Jr.

    1988-01-01

    Paper reports on corrosion in amorphous-silicon solar cells and modules. Based on field and laboratory tests, discusses causes of corrosion, ways of mitigating effects, and consequences for modules already in field. Suggests sealing of edges as way of reducing entry of moisture. Cell-free perimeters or sacrificial electrodes suggested to mitigate effects of sorbed moisture. Development of truly watertight module proves to be more cost-effective than attempting to mitigate effects of moisture.

  13. Thermally stimulated H emission and diffusion in hydrogenated amorphous silicon

    OpenAIRE

    Abtew, T. A.; Inam, F.; Drabold, D. A.

    2006-01-01

    We report first principles ab initio density functional calculations of hydrogen dynam- ics in hydrogenated amorphous silicon. Thermal motion of the host Si atoms drives H diffusion, as we demonstrate by direct simulation and explain with simple models. Si-Si bond centers and Si ring centers are local energy minima as expected. We also describe a new mechanism for break- ing Si-H bonds to release free atomic H into the network: a fluctuation bond center detachment (FBCD) assisted diffusion. H...

  14. Crystallization of amorphous silicon induced by mechanical shear deformations

    OpenAIRE

    Kerrache, Ali; Mousseau, Normand; Lewis, Laurent J.

    2011-01-01

    We have investigated the response of amorphous silicon (a-Si), in particular crystallization, to external mechanical shear deformations using classical molecular dynamics (MD) simulations and the empirical Environment Dependent Inter-atomic Potential (EDIP) [Phys. Rev. B 56, 8542 (1997)]. In agreement with previous results we find that, at low shear velocity and low temperature, shear deformations increase disorder and defect density. At high temperatures, however, the deformations are found ...

  15. Deposition-induced defect profiles in amorphous hydrogenated silicon

    OpenAIRE

    Hata, N.; Wagner, S.; Roca i Cabarrocas, P.; Favre, M.

    2008-01-01

    The thickness dependence of the subgap optical absorption in plasma-deposited hydrogenated amorphous silicon is carefully studied by photothermal deflection spectroscopy. The deep-level defect concentration decays from the top surface into the bulk where it approaches the thermal equilibrium defect density. This defect profile is interpreted in terms of the annealing, during growth, of growth-induced surface defects. It is also shown that this defect profile is compatible with the known growt...

  16. First-principles study of hydrogenated amorphous silicon

    OpenAIRE

    Jarolimek, K.; de Groot, R. A.; de Wijs, G. A.; Zeman, M.

    2009-01-01

    We use a molecular-dynamics simulation within density-functional theory to prepare realistic structures of hydrogenated amorphous silicon. The procedure consists of heating a crystalline structure of Si64H8 to 2370 K, creating a liquid and subsequently cooling it down to room temperature. The effect of the cooling rate is examined. We prepared a total of five structures which compare well to experimental data obtained by neutron-scattering experiments. Two structures do not contain any struct...

  17. Surface bioactivity of plasma implanted silicon and amorphous carbon

    Institute of Scientific and Technical Information of China (English)

    Paul K CHU

    2004-01-01

    Plasma immersion ion implantation and deposition (PⅢ&D) has been shown to be an effective technique to enhance the surface bioactivity of materials. In this paper, recent progress made in our laboratory on plasma surface modification single-crystal silicon and amorphous carbon is reviewed. Silicon is the most important material in the integrated circuit industry but its surface biocompatibility has not been investigated in details. We have recently performed hydrogen PⅢ into silicon and observed the biomimetic growth of apatite on its surface in simulated body fluid. Diamond-like carbon (DLC) is widely used in the industry due to its excellent mechanical properties and chemical inertness. The use of this material in biomedical engineering has also attracted much attention. It has been observed in our laboratory that doping DLC with nitrogen by means of PⅢ can improve the surface blood compatibility. The properties as well as in vitro biological test results will be discussed in this article.

  18. Growth model of lantern-like amorphous silicon oxide nanowires

    Science.gov (United States)

    Wu, Ping; Zou, Xingquan; Chi, Lingfei; Li, Qiang; Xiao, Tan

    2007-03-01

    Silicon oxide nanowire assemblies with lantern-like morphology were synthesized by thermal evaporation of the mixed powder of SnO2 and active carbon at 1000 °C and using the silicon wafer as substrate and source. The nano-lanterns were characterized by a scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), energy-dispersive spectroscope (EDS) and selective area electron diffraction (SAED). The results show that the nano-lantern has symmetrical morphology, with one end connecting with the silicon wafer and the other end being the tin ball. The diameter of the nano-lantern is about 1.5-3.0 µm. Arc silicon oxide nanowire assemblies between the two ends have diameters ranging from 70 to 150 nm. One single catalyst tin ball catalyzes more than one amorphous nanowires' growth. In addition, the growth mechanism of the nano-lantern is discussed and a growth model is proposed. The multi-nucleation sites round the Sn droplet's perimeter are responsible for the formation of many SiOx nanowires. The growing direction of the nanowires is not in the same direction of the movement of the catalyst tin ball, resulting in the bending of the nanowires and forming the lantern-like silicon oxide morphology. The controllable synthesis of the lantern-like silicon oxide nanostructure may have potential applications in the photoelectronic devices field.

  19. Growth model of lantern-like amorphous silicon oxide nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wu Ping; Zou Xingquan; Chi Lingfei; Li Qiang; Xiao Tan [Department of Physics, Shantou University, Shantou 515063 (China)

    2007-03-28

    Silicon oxide nanowire assemblies with lantern-like morphology were synthesized by thermal evaporation of the mixed powder of SnO{sub 2} and active carbon at 1000 deg. C and using the silicon wafer as substrate and source. The nano-lanterns were characterized by a scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), energy-dispersive spectroscope (EDS) and selective area electron diffraction (SAED). The results show that the nano-lantern has symmetrical morphology, with one end connecting with the silicon wafer and the other end being the tin ball. The diameter of the nano-lantern is about 1.5-3.0 {mu}m. Arc silicon oxide nanowire assemblies between the two ends have diameters ranging from 70 to 150 nm. One single catalyst tin ball catalyzes more than one amorphous nanowires' growth. In addition, the growth mechanism of the nano-lantern is discussed and a growth model is proposed. The multi-nucleation sites round the Sn droplet's perimeter are responsible for the formation of many SiO{sub x} nanowires. The growing direction of the nanowires is not in the same direction of the movement of the catalyst tin ball, resulting in the bending of the nanowires and forming the lantern-like silicon oxide morphology. The controllable synthesis of the lantern-like silicon oxide nanostructure may have potential applications in the photoelectronic devices field.

  20. Silicon nanocrystals on amorphous silicon carbide alloy thin films: Control of film properties and nanocrystals growth

    Energy Technology Data Exchange (ETDEWEB)

    Barbe, Jeremy, E-mail: jeremy.barbe@hotmail.com [CEA, Liten, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Universite de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, 31062 Toulouse (France); Xie, Ling; Leifer, Klaus [Department of Engineering Sciences, Uppsala University, Box 534, S-751 21 Uppsala (Sweden); Faucherand, Pascal; Morin, Christine; Rapisarda, Dario; De Vito, Eric [CEA, Liten, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Makasheva, Kremena; Despax, Bernard [Universite de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, 31062 Toulouse (France); CNRS, LAPLACE, F-31062 Toulouse (France); Perraud, Simon [CEA, Liten, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2012-11-01

    The present study demonstrates the growth of silicon nanocrystals on amorphous silicon carbide alloy thin films. Amorphous silicon carbide films [a-Si{sub 1-x}C{sub x}:H (with x < 0.3)] were obtained by plasma enhanced chemical vapor deposition from a mixture of silane and methane diluted in hydrogen. The effect of varying the precursor gas-flow ratio on the film properties was investigated. In particular, a wide optical band gap (2.3 eV) was reached by using a high methane-to-silane flow ratio during the deposition of the a-Si{sub 1-x}C{sub x}:H layer. The effect of short-time annealing at 700 Degree-Sign C on the composition and properties of the layer was studied by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. It was observed that the silicon-to-carbon ratio in the layer remains unchanged after short-time annealing, but the reorganization of the film due to a large dehydrogenation leads to a higher density of SiC bonds. Moreover, the film remains amorphous after the performed short-time annealing. In a second part, it was shown that a high density (1 Multiplication-Sign 10{sup 12} cm{sup -2}) of silicon nanocrystals can be grown by low pressure chemical vapor deposition on a-Si{sub 0.8}C{sub 0.2} surfaces at 700 Degree-Sign C, from silane diluted in hydrogen. The influence of growth time and silane partial pressure on nanocrystals size and density was studied. It was also found that amorphous silicon carbide surfaces enhance silicon nanocrystal nucleation with respect to SiO{sub 2}, due to the differences in surface chemical properties. - Highlights: Black-Right-Pointing-Pointer Silicon nanocrystals (Si-NC) growth on amorphous silicon carbide alloy thin films Black-Right-Pointing-Pointer Plasma deposited amorphous silicon carbide films with well-controlled properties Black-Right-Pointing-Pointer Study on the thermal effect of 700 Degree-Sign C short-time annealing on the layer properties Black-Right-Pointing-Pointer Low pressure

  1. Flexible amorphous silicon PIN diode x-ray detectors

    Science.gov (United States)

    Marrs, Michael; Bawolek, Edward; Smith, Joseph T.; Raupp, Gregory B.; Morton, David

    2013-05-01

    A low temperature amorphous silicon (a-Si) thin film transistor (TFT) and amorphous silicon PIN photodiode technology for flexible passive pixel detector arrays has been developed using active matrix display technology. The flexible detector arrays can be conformed to non-planar surfaces with the potential to detect x-rays or other radiation with an appropriate conversion layer. The thin, lightweight, and robust backplanes may enable the use of highly portable x-ray detectors for use in the battlefield or in remote locations. We have fabricated detector arrays up to 200 millimeters along the diagonal on a Gen II (370 mm x 470 mm rectangular substrate) using plasma enhanced chemical vapor deposition (PECVD) a-Si as the active layer and PECVD silicon nitride (SiN) as the gate dielectric and passivation. The a-Si based TFTs exhibited an effective saturation mobility of 0.7 cm2/V-s, which is adequate for most sensing applications. The PIN diode material was fabricated using a low stress amorphous silicon (a-Si) PECVD process. The PIN diode dark current was 1.7 pA/mm2, the diode ideality factor was 1.36, and the diode fill factor was 0.73. We report on the critical steps in the evolution of the backplane process from qualification of the low temperature (180°C) TFT and PIN diode process on the 150 mm pilot line, the transfer of the process to flexible plastic substrates, and finally a discussion and demonstration of the scale-up to the Gen II (370 x 470 mm) panel scale pilot line.

  2. The U.S. and Japanese amorphous silicon technology programs A comparison

    Science.gov (United States)

    Shimada, K.

    1984-01-01

    The U.S. Department of Energy/Solar Energy Research Institute Amorphous Silicon (a-Si) Solar Cell Program performs R&D on thin-film hydrogenated amorphous silicon for eventual development of stable amorphous silicon cells with 12 percent efficiency by 1988. The Amorphous Silicon Solar Cell Program in Japan is sponsored by the Sunshine Project to develop an alternate energy technology. While the objectives of both programs are to eventually develop a-Si photovoltaic modules and arrays that would produce electricity to compete with utility electricity cost, the U.S. program approach is research oriented and the Japanese is development oriented.

  3. Grain boundary resistance to amorphization of nanocrystalline silicon carbide

    Science.gov (United States)

    Chen, Dong; Gao, Fei; Liu, Bo

    2015-11-01

    Under the C displacement condition, we have used molecular dynamics simulation to examine the effects of grain boundaries (GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation. The results show that the interstitials are preferentially absorbed and accumulated at GBs that provide the sinks for defect annihilation at low doses, but also driving force to initiate amorphization in the nc-SiC at higher doses. The majority of surviving defects are C interstitials, as either C-Si or C-C dumbbells. The concentration of defect clusters increases with increasing dose, and their distributions are mainly observed along the GBs. Especially these small clusters can subsequently coalesce and form amorphous domains at the GBs during the accumulation of carbon defects. A comparison between displacement amorphized nc-SiC and melt-quenched single crystal SiC shows the similar topological features. At a dose of 0.55 displacements per atom (dpa), the pair correlation function lacks long range order, demonstrating that the nc-SiC is fully amorphilized.

  4. Recent developments in amorphous silicon-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Beneking, C.; Rech, B.; Foelsch, J.; Wagner, H. [Forschungszentrum Juelich GmbH (Germany). Inst. fuer Schicht- und Ionentechnik

    1996-03-01

    Two examples of recent advances in the field of thin-film, amorphous hydrogenated silicon (a-Si:H) pin solar cells are described: the improved understanding and control of the p/i interface, and the improvement of wide-bandgap a-Si:H material deposited at low substrate temperature as absorber layer for cells with high stabilized open-circuit voltage. Stacked a-Si:H/a-Si:H cells incorporating these concepts exhibit less than 10% (relative) efficiency degradation and show stabilized efficiencies as high as 9 to 10% (modules 8 to 9%). The use of low-gap a-Si:H and its alloys like a-SiGe:H as bottom cell absorber materials in multi-bandgap stacked cells offers additional possibilities. The combination of a-Si:H based top cells with thin-film crystalline silicon-based bottom cells appears as a promising new trend. It offers the perspective to pass significantly beyond the present landmark of 10% module efficiency reached by the technology utilizing exclusively amorphous silicon-based absorber layers, while keeping its advantages of potentially low-cost production. (orig.) 47 refs.

  5. Display elements and gaps: a comparison of flat panel display characteristics

    OpenAIRE

    Spenkelink, G.P.J.; Besuijen, J.

    1992-01-01

    The relation between typical flat panel display characteristics and display quality was studied. Subjective preferences were obtained with respect to simulated black-on-white flat panel displays. The displays differed in the sort of separation between the display elements and the shape of these elements. Further, the height/width ratio of the front was studied in relation with a fixed font matrix. The preferences were obtained through a paired comparison of all possible pairs of simulated dis...

  6. Structure and Optical Properties of Silicon Nanocrystals Embedded in Amorphous Silicon Thin Films Obtained by PECVD

    Directory of Open Access Journals (Sweden)

    B. M. Monroy

    2011-01-01

    Full Text Available Silicon nanocrystals embedded in amorphous silicon matrix were obtained by plasma enhanced chemical vapor deposition using dichlorosilane as silicon precursor. The RF power and dichlorosilane to hydrogen flow rate ratio were varied to obtain different crystalline fractions and average sizes of silicon nanocrystals. High-resolution transmission electron microscopy images and RAMAN measurements confirmed the existence of nanocrystals embedded in the amorphous matrix with average sizes between 2 and 6 nm. Different crystalline fractions (from 12% to 54% can be achieved in these films by regulating the selected growth parameters. The global optical constants of the films were obtained by UV-visible transmittance measurements. Effective band gap variations from 1.78 to 2.3 eV were confirmed by Tauc plot method. Absorption coefficients higher than standard amorphous silicon were obtained in these thin films for specific growth parameters. The relationship between the optical properties is discussed in terms of the different internal nanostructures of the samples.

  7. Ultralight amorphous silicon alloy photovoltaic modules for space applications

    Science.gov (United States)

    Hanak, J. J.; Chen, Englade; Fulton, C.; Myatt, A.; Woodyard, J. R.

    1987-01-01

    Ultralight and ultrathin, flexible, rollup monolithic PV modules have been developed consisting of multijunction, amorphous silicon alloys for either terrestrial or aerospace applications. The rate of progress in increasing conversion efficiency of stable multijunction and multigap PV cells indicates that arrays of these modules can be available for NASA's high power systems in the 1990's. Because of the extremely light module weight and the highly automated process of manufacture, the monolithic a-Si alloy arrays are expected to be strongly competitive with other systems for use in NASA's space station or in other large aerospace applications.

  8. Radiation damage and annealing of amorphous silicon solar cells

    Science.gov (United States)

    Byvik, C. E.; Slemp, W. S.; Smith, B. T.; Buoncristiani, A. M.

    1984-01-01

    Amorphous silicon solar cells were irradiated with 1 MeV electrons at the Space Environmental Effects Laboratory of the NASA Langley Research Center. The cells accumulated a total fluence of 10 to the 14th, 10 to the 15th, and 10 to the 16th electrons per square centimeter and exhibited increasing degradation with each irradiation. This degradation was tracked by evaluating the I-V curves for AM0 illumination and the relative spectral response. The observed radiation damage was reversed following an anneal of the cells under vacuum at 200 C for 2 hours.

  9. Study on stability of hydrogenated amorphous silicon films

    Institute of Scientific and Technical Information of China (English)

    Zhu Xiu-Hong; Chen Guang-Hua; Zhang Wen-Li; Ding Yi; Ma Zhan-Jie; Hu Yue-Hui; He Bin; Rong Yan-Dong

    2005-01-01

    Hydrogenated amorphous silicon (a-Si:H) films with high and same order of magnitude photosensitivity (~105) but different stability were prepared by using microwave electron cyclotron resonance chemical vapour deposition system under the different deposition conditions. It was proposed that there was no direct correlation between the photosensitivity and the hydrogen content (CH) as well as H-Si bonding configurations, but for the stability, they were the critical factors. The experimental results indicated that higher substrate temperature, hydrogen dilution ratio and lower deposition rate played an important role in improving the microstructure of a-Si:H films. We used hydrogen elimination model to explain our experimental results.

  10. Atomistic models of hydrogenated amorphous silicon nitride from first principles

    OpenAIRE

    Jarolimek, K.; de Groot, R. A.; de Wijs, G. A.; Zeman, M.

    2010-01-01

    We present a theoretical study of hydrogenated amorphous silicon nitride (a-SiNx:H), with equal concentrations of Si and N atoms (x=1), for two considerably different densities (2.0 and 3.0 g/cm3). Densities and hydrogen concentration were chosen according to experimental data. Using first-principles molecular-dynamics within density-functional theory the models were generated by cooling from the liquid. Where both models have a short-range order resembling that of crystalline Si3N4 because o...

  11. Two-Level Systems in Evaporated Amorphous Silicon

    OpenAIRE

    Queen, D. R.; Liu, X.; Karel, J.; Jacks, H. C.; Metcalf, T. H.; Hellman, F.

    2015-01-01

    In $e$-beam evaporated amorphous silicon ($a$-Si), the densities of two-level systems (TLS), $n_{0}$ and $\\overline{P}$, determined from specific heat $C$ and internal friction $Q^{-1}$ measurements, respectively, have been shown to vary by over three orders of magnitude. Here we show that $n_{0}$ and $\\overline{P}$ are proportional to each other with a constant of proportionality that is consistent with the measurement time dependence proposed by Black and Halperin and does not require the i...

  12. Eigenmode Splitting in all Hydrogenated Amorphous Silicon Nitride Coupled Microcavity

    Institute of Scientific and Technical Information of China (English)

    ZHANG Xian-Gao; HUANG Xin-Fan; CHEN Kun-Ji; QIAN Bo; CHEN San; DING Hong-Lin; LIU Sui; WANG Xiang; XU Jun; LI Wei

    2008-01-01

    Hydrogenated amorphous silicon nitride based coupled optical microcavity is investigated theoretically and experimentally. The theoretical calculation of the transmittance spectra of optical microcavity with one cavity and coupled microcavity with two-cavity is performed.The optical eigenmode splitting for coupled microcavity is found due to the interaction between the neighbouring localized cavities.Experimentally,the coupled cavity samples are prepared by plasma enhanced chemical vapour deposition and characterized by photoluminescence measurements.It is found that the photoluminescence peak wavelength agrees well with the cavity mode in the calculated transmittance spectra.This eigenmode splitting is analogous to the electron state energy splitting in diatom molecules.

  13. INFRARED VIBRATIONAL SPECTRA OF CHLORINATED AND HYDROGENATED AMORPHOUS SILICON

    OpenAIRE

    Kalem, S; Chevallier, J.; Al Dallal, S.; Bourneix, J.

    1981-01-01

    The infrared spectra of chlorinated and hydrogenated amorphous silicon have been measured. In addition to the hydrogen induced bands at 2110, 1990, 885, 840 and 640 cm-1, we observe two new modes at 545 cm-1 (Si-Cl stretching) and 500 cm-1 ( Si TO modes induced by chlorine). Observation of the 545 cm-1 band proves that chlorine acts as a dangling bond terminator. Upon annealing, some of the Si-Cl groups transform into SiCl4 molecules (SiCl4 stretching at 615 cm-1). A good agreement is found b...

  14. Experiment and Simulation Study on the Amorphous Silicon Photovoltaic Walls

    OpenAIRE

    Wenjie Zhang; Bin Hao; Nianping Li

    2014-01-01

    Based on comparative study on two amorphous silicon photovoltaic walls (a-Si PV walls), the temperature distribution and the instant power were tested; and with EnergyPlus software, similar models of the walls were built to simulate annual power generation and air conditioning load. On typical sunshine day, the corresponding position temperature of nonventilated PV wall was generally 0.5~1.5°C higher than that of ventilated one, while the power generation was 0.2%~0.4% lower, which was consis...

  15. Lithium concentration dependent structure and mechanics of amorphous silicon

    Science.gov (United States)

    Sitinamaluwa, H. S.; Wang, M. C.; Will, G.; Senadeera, W.; Zhang, S.; Yan, C.

    2016-06-01

    A better understanding of lithium-silicon alloying mechanisms and associated mechanical behavior is essential for the design of Si-based electrodes for Li-ion batteries. Unfortunately, the relationship between the dynamic mechanical response and microstructure evolution during lithiation and delithiation has not been well understood. We use molecular dynamic simulations to investigate lithiated amorphous silicon with a focus to the evolution of its microstructure, phase composition, and stress generation. The results show that the formation of LixSi alloy phase is via different mechanisms, depending on Li concentration. In these alloy phases, the increase in Li concentration results in reduction of modulus of elasticity and fracture strength but increase in ductility in tension. For a LixSi system with uniform Li distribution, volume change induced stress is well below the fracture strength in tension.

  16. Elimination of residual stress in hydrogenated amorphous silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Jones, P.L.; Korhonen, A.S.; Dimmey, L.J.; Cocks, F.H.; Pollock, J.T.A.

    1982-02-01

    Residual stresses were measured in hydrogenated amorphous silicon films produced by glow discharge decomposition of silane and deposited onto aluminium, Invar (36Ni-64Fe), copper and nickel substrates. The substrate temperatures were in the range 54-295/sup 0/C during deposition. For low deposition temperatures, all films irrespective of substrate exhibited compressive room temperature residual stresses ranging from -60 to -120 mPa. A major fraction of this residual stress is found to come from the intrinsic deposition stress, which has complex origins relating to deposition and substrate conditions. With aluminium substrates, increasing the deposition temperature increased the compressive residual stress, primarily because of the difference between the thermal expansion coefficients of silicon and aluminium. However, with Invar substrates, films deposited at 225/sup 0/C exhibited a zero residual stress at room temperature because of a balancing of the compressive intrinsic deposition stress with the tensile stress produced during cooling by the low thermal expansion of the Invar.

  17. Electrical characteristics of amorphous molybdenum-nickel contacts to silicon

    Science.gov (United States)

    Kung, K. T.-Y.; Nicolet, M.-A.; Suni, I.

    1984-01-01

    The electrical characteristics of sputtered, amorphous Mo-Ni contacts have been measured on both p- and n-type Si, as functions of composition (30, 54, and 58 at. percent Mo). The contact resistivity on both p(+) and n(+) Si is in the 0.00000 ohm sq cm range. The barrier height for as-deposited samples varies between phi-bp = 0.47-0.42 V on p-type Si and between phi-bn = 0.63-0.68 V on n-type Si, as the composition of the amorphous layer goes from Ni-rich to Mo-rich. The sum phi-bp + phi-bn always equals 1.12 V, within experimental error. After thermal treatment at 500 C for 1/2 h, the contact resistivity changes by a factor of two or less, while the barrier height changes by at most approximately 0.05 V. In light of these results, the amorphous Mo-Ni film makes good ohmic contacts to silicon.

  18. Theory of structural transformation in lithiated amorphous silicon.

    Science.gov (United States)

    Cubuk, Ekin D; Kaxiras, Efthimios

    2014-07-01

    Determining structural transformations in amorphous solids is challenging due to the paucity of structural signatures. The effect of the transitions on the properties of the solid can be significant and important for applications. Moreover, such transitions may not be discernible in the behavior of the total energy or the volume of the solid as a function of the variables that identify its phases. These issues arise in the context of lithiation of amorphous silicon (a-Si), a promising anode material for high-energy density batteries based on lithium ions. Recent experiments suggest the surprising result that the lithiation of a-Si is a two-phase process. Here, we present first-principles calculations of the structure of a-Si at different lithiation levels. Through a detailed analysis of the short and medium-range properties of the amorphous network, using Voronoi-Delaunay methods and ring statistics, we show that a-LixSi has a fundamentally different structure below and above a lithiation level corresponding to x ∼ 2. PMID:24911996

  19. Experimental and Computer Modelling Studies of Metastability of Amorphous Silicon Based Solar Cells

    NARCIS (Netherlands)

    Munyeme, Geoffrey

    2003-01-01

    We present a combination of experimental and computer modelling studies of the light induced degradation in the performance of amorphous silicon based single junction solar cells. Of particular interest in this study is the degradation kinetics of different types of amorphous silicon single junction

  20. High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells.

    Science.gov (United States)

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    Thin films of hydrogenated amorphous silicon can be produced at MPa pressures from silane without the use of plasma at temperatures as low as 345 °C. High pressure chemical vapor deposition may open a new way to low cost deposition of amorphous silicon solar cells and other thin film structures over very large areas in very compact, simple reactors. PMID:27174318

  1. Empirical and theoretical investigation of the noise performance of indirect detection, active matrix flat-panel imagers (AMFPIs) for diagnostic radiology.

    Science.gov (United States)

    Siewerdsen, J H; Antonuk, L E; el-Mohri, Y; Yorkston, J; Huang, W; Boudry, J M; Cunningham, I A

    1997-01-01

    Noise properties of active matrix, flat-panel imagers under conditions relevant to diagnostic radiology are investigated. These studies focus on imagers based upon arrays with pixels incorporating a discrete photodiode coupled to a thin-film transistor, both fabricated from hydrogenated amorphous silicon. These optically sensitive arrays are operated with an overlying x-ray converter to allow indirect detection of incident x rays. External electronics, including gate driver circuits and preamplification circuits, are also required to operate the arrays. A theoretical model describing the signal and noise transfer properties of the imagers under conditions relevant to diagnostic radiography, fluoroscopy, and mammography is developed. This frequency-dependent model is based upon a cascaded systems analysis wherein the imager is conceptually divided into a series of stages having intrinsic gain and spreading properties. Predictions from the model are compared with x-ray sensitivity and noise measurements obtained from individual pixels from an imager with a pixel format of 1536 x 1920 pixels at a pixel pitch of 127 microns. The model is shown to be in excellent agreement with measurements obtained with diagnostic x rays using various phosphor screens. The model is used to explore the potential performance of existing and hypothetical imagers for application in radiography, fluoroscopy, and mammography as a function of exposure, additive noise, and fill factor. These theoretical predictions suggest that imagers of this general design incorporating a CsI: Tl intensifying screen can be optimized to provide detective quantum efficiency (DQE) superior to existing screen-film and storage phosphor systems for general radiography and mammography. For fluoroscopy, the model predicts that with further optimization of a-Si:H imagers, DQE performance approaching that of the best x-ray image intensifier systems may be possible. The results of this analysis suggest strategies for

  2. First principles simulation of amorphous silicon bulk, interfaces, and nanowires for photovoltaics

    OpenAIRE

    Belayneh, Merid Legesse

    2015-01-01

    Amorphous silicon has become the material of choice for many technologies, with major applications in large area electronics: displays, image sensing and thin film photovoltaic cells. This technology development has occurred because amorphous silicon is a thin film semiconductor that can be deposited on large, low cost substrates using low temperature. In this thesis, classical molecular dynamics and first principles DFT calculations have been performed to generate structural models of amorph...

  3. Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

    Directory of Open Access Journals (Sweden)

    Jia Ge

    2014-01-01

    Full Text Available We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper. The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen, silane, and carbon dioxide in an industrial remote inductively coupled plasma platform. Through the investigation on CO2 partial pressure and process temperature, excellent surface passivation quality and optical properties are achieved. It is found that the hydrogen content in the film is much higher than what is commonly reported in intrinsic amorphous silicon due to oxygen incorporation. The observed slow depletion of hydrogen with increasing temperature greatly enhances its process window as well. The effective lifetime of symmetrically passivated samples under the optimal condition exceeds 4.7 ms on planar n-type Czochralski silicon wafers with a resistivity of 1 Ωcm, which is equivalent to an effective surface recombination velocity of less than 1.7 cms−1 and an implied open-circuit voltage (Voc of 741 mV. A comparison with several high quality passivation schemes for solar cells reveals that the developed inductively coupled plasma deposited films show excellent passivation quality. The excellent optical property and resistance to degradation make it an excellent substitute for industrial heterojunction silicon solar cell production.

  4. Similarities in the electrical conduction processes in hydrogenated amorphous silicon oxynitride and silicon nitride

    CERN Document Server

    Kato, H; Ohki, Y; Seol, K S; Noma, T

    2003-01-01

    Electrical conduction at high fields was examined in a series of hydrogenated amorphous silicon oxynitride and silicon nitride films with different nitrogen contents deposited by plasma-enhanced chemical vapour deposition. It was shown that the conduction is attributable to the Poole-Frenkel (PF) emission in the two materials. The energy depths of the PF sites and the dependences on the sample's chemical composition are quite similar for the two samples. It is considered that the PF sites in the two materials are identical.

  5. Modelling structure and properties of amorphous silicon boron nitride ceramics

    Directory of Open Access Journals (Sweden)

    Johann Christian Schön

    2011-06-01

    Full Text Available Silicon boron nitride is the parent compound of a new class of high-temperature stable amorphous ceramics constituted of silicon, boron, nitrogen, and carbon, featuring a set of properties that is without precedent, and represents a prototypical random network based on chemical bonds of predominantly covalent character. In contrast to many other amorphous materials of technological interest, a-Si3B3N7 is not produced via glass formation, i.e. by quenching from a melt, the reason being that the binary components, BN and Si3N4, melt incongruently under standard conditions. Neither has it been possible to employ sintering of μm-size powders consisting of binary nitrides BN and Si3N4. Instead, one employs the so-called sol-gel route starting from single component precursors such as TADB ((SiCl3NH(BCl2. In order to determine the atomic structure of this material, it has proven necessary to simulate the actual synthesis route.Many of the exciting properties of these ceramics are closely connected to the details of their amorphous structure. To clarify this structure, it is necessary to employ not only experimental probes on many length scales (X-ray, neutron- and electron scattering; complex NMR experiments; IR- and Raman scattering, but also theoretical approaches. These address the actual synthesis route to a-Si3B3N7, the structural properties, the elastic and vibrational properties, aging and coarsening behaviour, thermal conductivity and the metastable phase diagram both for a-Si3B3N7 and possible silicon boron nitride phases with compositions different from Si3N4: BN = 1 : 3. Here, we present a short comprehensive overview over the insights gained using molecular dynamics and Monte Carlo simulations to explore the energy landscape of a-Si3B3N7, model the actual synthesis route and compute static and transport properties of a-Si3BN7.

  6. Infrared Insight into the Network of Hydrogenated Amorphous and Polycrystalline Silicon thin Films

    OpenAIRE

    Jarmila Mullerova

    2006-01-01

    IR measurements were carried out on both amorphous and polycrystalline silicon samples deposited by PECVD on glass substrate. The transition from amorphous to polycrystalline phase was achieved by increasing dilution of silane plasma at the deposition process. The samples were found to be mixed phase materials. Commonly, infrared spectra of hydrogenated silicon thin films yield information about microstructure, hydrogen content and hydrogen bonding to silicon. In this paper, addit...

  7. Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials

    OpenAIRE

    Roura Grabulosa, Pere; Farjas Silva, Jordi; Rath, Chandana; Serra-Miralles, J.; Bertrán Serra, Enric; Roca I Cabarrocas, Pere

    2006-01-01

    Differential scanning calorimetry (DSC) was used to study the dehydrogenation processes that take place in three hydrogenated amorphous silicon materials: nanoparticles, polymorphous silicon, and conventional device-quality amorphous silicon. Comparison of DSC thermograms with evolved gas analysis (EGA) has led to the identification of four dehydrogenation processes arising from polymeric chains (A), SiH groups at the surfaces of internal voids (A'), SiH groups at interfaces (B), and in the b...

  8. The influence of post-deposition annealing upon amorphous silicon/crystalline silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mikolášek, Miroslav, E-mail: miroslav.mikolasek@stuba.sk [Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); Nemec, Michal; Kováč, Jaroslav [Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); Foti, Marina; Gerardi, Cosimo [IMS-R and D, STMicroelectronics, Stradale Primosole, 50, 95121 Catania (Italy); Mannino, Giovanni; Valenti, Luca; Lombardo, Salvatore [CNR-IMM, Zona Industriale, Ottava Strada, 5, 95121 Catania (Italy)

    2014-11-15

    Highlights: • We studied the impact of the thermal annealing on the silicon heterojunction solar cells. • Compared were samples deposited by ICP-CVD and PE-CVD methods. • Annealing up to 250 °C improves output performance of both solar cells. • Annealing above 250 °C increases defect states density at the interface and in the amorphous emitter. • Samples deposited by ICP-CVD shows better resistance against annealing. - Abstract: This paper presents a comparative study of the influence of post-deposition annealing on amorphous silicon/crystalline silicon heterojunction solar cells deposited by ICP-CVD and PE-CVD techniques. Two major effects on the solar cell efficiency occur caused by thermal annealing. The first effect is a slight improvement of the performance on annealing up to 250 °C. The second effect, for annealing temperatures above 250 °C, reveals deterioration of the solar cell performance. It is suggested that both effects are related to thermally activated diffusion of hydrogen. For low annealing temperatures, diffusion of weakly bonded hydrogen allows to passivate the defects in the amorphous emitter and at the heterointerface. In the high temperature annealing region, outdiffusion of hydrogen is assumed to be responsible for an increase of defect states in the structures. The results indicate a better stability after high temperature treatment for the sample prepared by ICP-CVD technology.

  9. Light-induced metastability in pure and hydrogenated amorphous silicon

    Science.gov (United States)

    Queen, D. R.; Liu, X.; Karel, J.; Wang, Q.; Crandall, R. S.; Metcalf, T. H.; Hellman, F.

    2015-10-01

    Light soaking is found to increase the specific heat C and internal friction Q-1 of pure (a-Si) and hydrogenated (a-Si:H) amorphous silicon. At the lowest temperatures, the increases in C and Q-1 are consistent with an increased density of two-level systems (TLS). The light-induced increase in C persists to room temperature. Neither the sound velocity nor shear modulus change with light soaking indicating that the Debye specific heat is unchanged which suggests that light soaking creates localized vibrational modes in addition to TLS. The increase can be reversibly added and removed by light soaking and annealing, respectively, suggesting that it is related to the Staebler-Wronski effect (SWE), even in a-Si without H, and involves a reversible nanoscale structural rearrangement that is facilitated by, but does not require, H to occur.

  10. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  11. Radiation Resistance Studies of Amorphous Silicon Alloy Photovoltaic Materials

    Science.gov (United States)

    Woodyard, James R.

    1994-01-01

    The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys was investigated. A number of different device structures were irradiated with 1.0 MeV protons. The cells were insensitive to proton fluences below 1E12 sq cm. The parameters of the irradiated cells were restored with annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters for fluences below lE14 sq cm require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed in dark I-V measurements. The current mechanisms were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

  12. Atomistic simulations of material damping in amorphous silicon nanoresonators

    Science.gov (United States)

    Mukherjee, Sankha; Song, Jun; Vengallatore, Srikar

    2016-06-01

    Atomistic simulations using molecular dynamics (MD) are emerging as a valuable tool for exploring dissipation and material damping in nanomechanical resonators. In this study, we used isothermal MD to simulate the dynamics of the longitudinal-mode oscillations of an amorphous silicon nanoresonator as a function of frequency (2 GHz–50 GHz) and temperature (15 K–300 K). Damping was characterized by computing the loss tangent with an estimated uncertainty of 7%. The dissipation spectrum displays a sharp peak at 50 K and a broad peak at around 160 K. Damping is a weak function of frequency at room temperature, and the loss tangent has a remarkably high value of ~0.01. In contrast, at low temperatures (15 K), the loss tangent increases monotonically from 4× {{10}-4} to 4× {{10}-3} as the frequency increases from 2 GHz to 50 GHz. The mechanisms of dissipation are discussed.

  13. Rapid Thermal annealing of silicon layers amorphized by ion implantation

    International Nuclear Information System (INIS)

    The recrystallization behavior and the supression mechanisms of the residual defects of silicon layers amorphized by ion implantation, were investigated. The samples were annealed with the aid of a rapid thermal annealing (RTA) system at temperature range from 850 to 12000C, and annealing time up to 120 s. Random and aligned Rutherford backscattering spectroscopy were used to analyse the samples. Similarities in the recrystallization behavior for layers implanted with ions of the same chemical groups such as As or Sb; Ge, Sn or Pb, In or Ga, are observed. The results show that the effective supression of resisual defects of the recrystallired layers is vinculated to the redistribution of impurities via thermal diffusion. (author)

  14. Si-H bond dynamics in hydrogenated amorphous silicon

    Science.gov (United States)

    Scharff, R. Jason; McGrane, Shawn D.

    2007-08-01

    The ultrafast structural dynamics of the Si-H bond in the rigid solvent environment of an amorphous silicon thin film is investigated using two-dimensional infrared four-wave mixing techniques. The two-dimensional infrared (2DIR) vibrational correlation spectrum resolves the homogeneous line shapes ( 4ps waiting times. The Si-H stretching mode anharmonic shift is determined to be 84cm-1 and decreases slightly with vibrational frequency. The 1→2 linewidth increases with vibrational frequency. Frequency dependent vibrational population times measured by transient grating spectroscopy are also reported. The narrow homogeneous line shape, large inhomogeneous broadening, and lack of spectral diffusion reported here present the ideal backdrop for using a 2DIR probe following electronic pumping to measure the transient structural dynamics implicated in the Staebler-Wronski degradation [Appl. Phys. Lett. 31, 292 (1977)] in a-Si:H based solar cells.

  15. Optical limiting in hydrogenated amorphous silicon-selenium thin films

    Energy Technology Data Exchange (ETDEWEB)

    Manaa, Hacene, E-mail: hmanaa@gmail.co [Physics Department, Kuwait University, P.O. Box 5969, Safat 13060 (Kuwait); Al-Mulla, Abdullah; Al-Jamal, Noor [Physics Department, Kuwait University, P.O. Box 5969, Safat 13060 (Kuwait); Al-Dallal, Shawqi; Al-Alawi, Saleh [Physics Department, University of Bahrain, P.O. Box 32038 (Bahrain)

    2010-05-03

    Hydrogenated amorphous silicon-selenium alloy thin films grown by capacitively coupled radio-frequency glow-discharge are investigated. Nonlinear absorptive effects are evaluated with the help of open aperture z-scan technique in the 525 to 580 nm spectral range. The nonlinear absorption coefficient is found to be very large and reaching the value of 5.14 x 10{sup -3} cm/W at 525 nm. The origin of the optical nonlinearities is studied and found to be due mainly to two photon absorption in the case of pulsed excitation, whereas thermal effects are thought to be dominant when the sample is excited with a continuous wave laser. Optical limiting potentialities of the thin film are experimentally observed and their thresholds are found to be very low.

  16. Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

    Institute of Scientific and Technical Information of China (English)

    DING Wen-ge; YU Wei; ZHANG Jiang-yong; HAN Li; FU Guang-sheng

    2006-01-01

    The hydrogenated amorphous silicon nitride (SiNx) thin films embedded with nano-structural silicon were prepared and the microstructures at the interface of silicon nano-grains/SiNx were identified by the optical absorption and Raman scattering measurements. Characterized by the exponential tail of optical absorption and the band-width of the Raman scattering TO mode, the disorder in the interface region increases with the gas flow ratio increasing. Besides, as reflected by the sub-gap absorption coefficients, the density of interface defect states decreases, which can be attributed to the structural mismatch in the interface region and also the changes of hydrogen content in the deposited films. Additional annealing treatment results in a significant increase of defects and degree of disorder, for which the hydrogen out-diffusion in the annealing process would be responsible.

  17. Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

    Directory of Open Access Journals (Sweden)

    Yaser Abdulraheem

    2014-05-01

    Full Text Available An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si wafers by plasma enhanced chemical vapor deposition (PECVD. The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause

  18. Excellent crystalline silicon surface passivation by amorphous silicon irrespective of the technique used for chemical vapor deposition

    OpenAIRE

    Schuttauf, J.A.; van der Werf, C.H.M.; Kielen, I.M.; Sark, W.G.J.H.M. van; Rath, J.K.; R. E. I. Schropp

    2011-01-01

    Crystalline silicon surface passivation by amorphous silicon deposited by three different chemical vapor deposition (CVD) techniques at low (T ∼ 130 °C) temperatures is compared. For all three techniques, surface recombination velocities (SRVs) are reduced by two orders of magnitude after prolonged thermal annealing at 200 °C. This reduction correlates with a decreased dangling bond density at the amorphous-crystalline interface, indicating that dangling bond saturation is the predominant mec...

  19. Electronic properties of intrinsic and doped amorphous silicon carbide films

    Energy Technology Data Exchange (ETDEWEB)

    Vetter, M. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain)]. E-mail: mvetter@eel.upc.edu; Voz, C. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Ferre, R. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Martin, I. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Orpella, A. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Puigdollers, J. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Andreu, J. [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E-08028 Barcelona (Spain); Alcubilla, R. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain)

    2006-07-26

    Hydrogenated amorphous silicon carbide (a-SiC{sub x} : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was investigated. It is found that homogenous deposition with effective surface recombination velocity lower than 100 cms{sup -1} is possible up to 6'' diameter in a simple parallel plate reactor by optimizing deposition parameters. For application in solar cell processes the conductivity of these a-SiC{sub x} : H films might become of importance since good surface passivation results from field-effect passivation which needs an insulating dielectric layer. Therefore, the temperature dependence of the dark dc conductivity of these films was investigated in the temperature range from - 20 to 260 deg. C. Two transition temperatures, T {sub s}{approx}80 deg. C and T {sub s}{approx}170 deg. C, were found where conductivity increases, resp. decreases over-exponential. From Arrhenius plots activation energy (E {sub a}) and conductivity pre-factor ({sigma} {sub 0}) were calculated for a large number of samples with different composition. A correlation between E {sub a} and {sigma} {sub 0} was found giving a Meyer-Neldel relation with a slope of 59 mV, corresponding to a material characteristic temperature T {sub m} = 400 deg. C, and an intercept at {sigma} {sub 00} = 0.1 {omega}{sup -1}cm{sup -1}.

  20. Pulsed Excimer (KrF) Laser Melting of Amorphous and Crystalline Silicon Layers

    OpenAIRE

    Walthuis, A.; Stritzker, B.; White, C. W.; J. Narayan; Aziz, Michael

    1985-01-01

    We have investigated depth of melting as a function of pulse energy density in amorphous and crystalline silicon layers. The melting threshold for KrF laser pulses (lambda=0.249 µm, tau=24×10−9 s) in amorphous (7660-Å-thick) and crystalline silicon layers were determined to be 0.16±0.02 and 0.75±0.05 J cm−2, respectively. The formation of fine- and large-polycrystalline regions was clearly identified in the amorphous silicon layers for energy densities below that needed for complete annealing...

  1. Temperature dependence of hydrogenated amorphous silicon solar cell performances

    Science.gov (United States)

    Riesen, Y.; Stuckelberger, M.; Haug, F.-J.; Ballif, C.; Wyrsch, N.

    2016-01-01

    Thin-film hydrogenated amorphous silicon solar (a-Si:H) cells are known to have better temperature coefficients than crystalline silicon cells. To investigate whether a-Si:H cells that are optimized for standard conditions (STC) also have the highest energy yield, we measured the temperature and irradiance dependence of the maximum power output (Pmpp), the fill factor (FF), the short-circuit current density (Jsc), and the open-circuit voltage (Voc) for four series of cells fabricated with different deposition conditions. The parameters varied during plasma-enhanced chemical vapor deposition (PE-CVD) were the power and frequency of the PE-CVD generator, the hydrogen-to-silane dilution during deposition of the intrinsic absorber layer (i-layer), and the thicknesses of the a-Si:H i-layer and p-type hydrogenated amorphous silicon carbide layer. The results show that the temperature coefficient of the Voc generally varies linearly with the Voc value. The Jsc increases linearly with temperature mainly due to temperature-induced bandgap reduction and reduced recombination. The FF temperature dependence is not linear and reaches a maximum at temperatures between 15 °C and 80 °C. Numerical simulations show that this behavior is due to a more positive space-charge induced by the photogenerated holes in the p-layer and to a recombination decrease with temperature. Due to the FF(T) behavior, the Pmpp (T) curves also have a maximum, but at a lower temperature. Moreover, for most series, the cells with the highest power output at STC also have the best energy yield. However, the Pmpp (T) curves of two cells with different i-layer thicknesses cross each other in the operating cell temperature range, indicating that the cell with the highest power output could, for instance, have a lower energy yield than the other cell. A simple energy-yield simulation for the light-soaked and annealed states shows that for Neuchâtel (Switzerland) the best cell at STC also has the best energy

  2. Nano structures of amorphous silicon: localization and energy gap

    Directory of Open Access Journals (Sweden)

    Z Nourbakhsh

    2013-10-01

    Full Text Available Renewable energy research has created a push for new materials; one of the most attractive material in this field is quantum confined hybrid silicon nano-structures (nc-Si:H embedded in hydrogenated amorphous silicon (a-Si:H. The essential step for this investigation is studying a-Si and its ability to produce quantum confinement (QC in nc-Si: H. Increasing the gap of a-Si system causes solar cell efficiency to increase. By computational calculations based on Density Functional Theory (DFT, we calculated a special localization factor, [G Allan et al., Phys. Rev. B 57 (1997 6933.], for the states close to HOMO and LUMO in a-Si, and found most weak-bond Si atoms. By removing these silicon atoms and passivating the system with hydrogen, we were able to increase the gap in the a-Si system. As more than 8% hydrogenate was not experimentally available, we removed about 2% of the most localized Si atoms in the almost tetrahedral a-Si system. After removing localized Si atoms in the system with 1000 Si atoms, and adding 8% H, the gap increased about 0.24 eV. Variation of the gap as a function of hydrogen percentage was in good agreement with the Tight –Binding results, but about 2 times more than its experimental value. This might come from the fact that in the experimental conditions, it does not have the chance to remove the most localized states. However, by improving the experimental conditions and technology, this value can be improved.

  3. 非晶硒平板探测器DR与CR模拟病变描述和剂量降低的对比研究%Amorphous selenium flat-panel detector digital radiography versus computed radiography: phantom study of depiction of simulated lesion and dose reduction

    Institute of Scientific and Technical Information of China (English)

    曾勇明; 吴富荣; 张志伟; 欧阳羽; 谭秀洪; 金瑞

    2008-01-01

    Objective To compare an amorphous selenium fiat-panel detector digital radiography(DR) with a computed radiography(CR) for the depiction of simulated pulmonary lesion,as well as for evaluation of dose reduction.Methods Simulated linear,reticular,and nodular lesion were located in all anthropomorphic chest phantom.The phantom was exposed by DR and CR with different mAs sets.The entrance surface doses were recorded for all images.Hard copy images were generated at different dose levels.Images were presented in a random order to four independent radiologists.They subjectively rated the visibility of simulated pulmonary lesion. Statistical significance of difference was analvsed with wilcoxon test.Resuits The visibility of simulated linear and reticular lesions on the images obtained with DR was superior to the images from CR at 2.0 and 3.2 mAs.P 0.05).DR was superior to CR in detection sinail nodular(diameter0.05).2.0、3.2、5.0、6.3 mAs曝光档,对于小结节(直径小于10 mm)的检测DR均优于CR(Z:-2.237,P=0.018;Z=-2.384,P=0.017;Z=-2.388,P=0.017;Z=-2.366,P=0.018).当3种模拟肺部病变都显示清楚时.用非晶硒DR系统的入射体表剂量降低约65%.结论 对微小低对比病变的描述,非晶硒平板探测器DR优于CR且明显地降低曝光剂晕.

  4. On the effect of the amorphous silicon microstructure on the grain size of solid phase crystallized polycrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Kashish; Branca, Annalisa; Illiberi, Andrea; Creatore, Mariadriana; Sanden, Mauritius C.M. van de [Department of Applied Physics, Eindhoven University of Technology (Netherlands); Tichelaar, Frans D. [Kavli Institute of Nanoscience, Delft University of Technology (Netherlands)

    2011-05-15

    In this paper the effect of the microstructure of remote plasma-deposited amorphous silicon films on the grain size development in polycrystalline silicon upon solid-phase crystallization is reported. The hydrogenated amorphous silicon films are deposited at different microstructure parameter values R* (which represents the distribution of SiH{sub x} bonds in amorphous silicon), at constant hydrogen content. Amorphous silicon films undergo a phase transformation during solid-phase crystallization and the process results in fully (poly-)crystallized films. An increase in amorphous film structural disorder (i.e., an increase in R*), leads to the development of larger grain sizes (in the range of 700-1100 nm). When the microstructure parameter is reduced, the grain size ranges between 100 and 450 nm. These results point to the microstructure parameter having a key role in controlling the grain size of the polycrystalline silicon films and thus the performance of polycrystalline silicon solar cells. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Volumetry of human molars with flat panel-based volume CT in vitro

    NARCIS (Netherlands)

    Hannig, C.; Krieger, E.; Dullin, C.; Merten, H.A.; Attin, T.; Grabbe, E.; Heidrich, G.

    2006-01-01

    The flat panel-based volume computed tomography (fpVCT) is a new CT device applicable for experimental, three-dimensional evaluation of teeth at a resolution of about 150 microm in the high contrast region. The aim of this study was to investigate whether fpVCT was suitable for quantification of the

  6. Fabrication of solution-processed hydrogenated amorphous silicon single junction solar cells

    OpenAIRE

    Masuda, Takashi; Sotani, Naoya; Hamada, Hiroki; Matsuki, Yasuo; Shimoda, Tatsuya

    2012-01-01

    Hydrogenated amorphous silicon solar cells were fabricated using solution-based processes. All silicon layers of the p-i-n junction were stacked by a spin-cast method using doped and non-doped polydihydrosilane solutions. Further, a hydrogen-radical treatment under vacuum conditions was employed to reduce spin density in the silicon films. Following this treatment, the electric properties of the silicon films were improved, and the power conversion efficiency of the solar cells was also incre...

  7. Excellent crystalline silicon surface passivation by amorphous silicon irrespective of the technique used for chemical vapor deposition

    NARCIS (Netherlands)

    Schuttauf, J.A.; van der Werf, C.H.M.; Kielen, I.M.; van Sark, W.G.J.H.M.; Rath, J.K.; Schropp, R.E.I.

    2011-01-01

    Crystalline silicon surface passivation by amorphous silicon deposited by three different chemical vapor deposition (CVD) techniques at low (T ∼ 130 °C) temperatures is compared. For all three techniques, surface recombination velocities (SRVs) are reduced by two orders of magnitude after prolonged

  8. Temperature-dependent minority carrier lifetime of crystalline silicon wafers passivated by high quality amorphous silicon oxide

    Science.gov (United States)

    Inaba, Masahiro; Todoroki, Soichiro; Nakada, Kazuyoshi; Miyajima, Shinsuke

    2016-04-01

    We investigated the effects of annealing on the temperature-dependent minority carrier lifetime of a crystalline silicon wafer passivated by hydrogenated amorphous silicon oxide. The annealing significantly affects the lifetime and its temperature dependence. Our device simulations clearly indicate that valence band offset significantly affects the temperature dependence. We also found a slight increase in the interface defect density after annealing.

  9. Environmental life cycle assessment of roof-integrated flexible amorphous silicon/nanocrystalline silicon solar cell laminate

    NARCIS (Netherlands)

    N.J. Mohr; A. Meijer; M.A.J. Huijbregts; L. Reijnders

    2013-01-01

    This paper presents an environmental life cycle assessment of a roof-integrated flexible solar cell laminate with tandem solar cells composed of amorphous silicon/nanocrystalline silicon (a-Si/nc-Si). The a-Si/nc-Si cells are considered to have 10% conversion efficiency. Their expected service life

  10. Femtosecond Laser Crystallization of Boron-doped Amorphous Hydrogenated Silicon Films

    Directory of Open Access Journals (Sweden)

    P.D. Rybalko

    2016-10-01

    Full Text Available Crystallization of amorphous hydrogenated silicon films with femtosecond laser pulses is one of the promising ways to produce nanocrystalline silicon for photovoltaics. The structure of laser treated films is the most important factor determining materials' electric and photoelectric properties. In this work we investigated the effect of femtosecond laser irradiation of boron doped amorphous hydrogenated silicon films with different fluences on crystalline volume fraction and electrical properties of this material. A sharp increase of conductivity and essential decrease of activation energy of conductivity temperature dependences accompany the crystallization process. The results obtained are explained by increase of boron doping efficiency in crystalline phase of modified silicon film.

  11. Nonlinear Optical Functions in Crystalline and Amorphous Silicon-on-Insulator Nanowires

    DEFF Research Database (Denmark)

    Baets, R.; Kuyken, B.; Liu, X.;

    2012-01-01

    Silicon-on-Insulator nanowires provide an excellent platform for nonlinear optical functions in spite of the two-photon absorption at telecom wavelengths. Work on both crystalline and amorphous silicon nanowires is reviewed, in the wavelength range of 1.5 to 2.5 µm.......Silicon-on-Insulator nanowires provide an excellent platform for nonlinear optical functions in spite of the two-photon absorption at telecom wavelengths. Work on both crystalline and amorphous silicon nanowires is reviewed, in the wavelength range of 1.5 to 2.5 µm....

  12. Solution growth of microcrystalline silicon on amorphous substrates

    Energy Technology Data Exchange (ETDEWEB)

    Heimburger, Robert

    2010-07-05

    This work deals with low-temperature solution growth of micro-crystalline silicon on glass. The task is motivated by the application in low-cost solar cells. As glass is an amorphous material, conventional epitaxy is not applicable. Therefore, growth is conducted in a two-step process. The first step aims at the spatial arrangement of silicon seed crystals on conductive coated glass substrates, which is realized by means of vapor-liquid-solid processing using indium as the solvent. Seed crystals are afterwards enlarged by applying a specially developed steady-state solution growth apparatus. This laboratory prototype mainly consists of a vertical stack of a silicon feeding source and the solvent (indium). The growth substrate can be dipped into the solution from the top. The system can be heated to a temperature below the softening point of the utilized glass substrate. A temperature gradient between feeding source and growth substrate promotes both, supersaturation and material transport by solvent convection. This setup offers advantages over conventional liquid phase epitaxy at low temperatures in terms of achievable layer thickness and required growth times. The need for convective solute transport to gain the desired thickness of at least 50 {mu}m is emphasized by equilibrium calculations in the binary system indium-silicon. Material transport and supersaturation conditions inside the utilized solution growth crucible are analyzed. It results that the solute can be transported from the lower feeding source to the growth substrate by applying an appropriate heating regime. These findings are interpreted by means of a hydrodynamic analysis of fluid flow and supporting FEM simulation. To ensure thermodynamic stability of all materials involved during steady-state solution growth, the ternary phase equilibrium between molybdenum, indium and silicon at 600 C was considered. Based on the obtained results, the use of molybdenum disilicide as conductive coating

  13. RF sputtering for controlling dihydride and monohydride bond densities in amorphous silicon hydride

    Science.gov (United States)

    Jeffery, F.R.; Shanks, H.R.

    1980-08-26

    A process is described for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicone produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous solicone hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

  14. Anomalous interaction of longitudinal electric field with hydrogenated amorphous silicon films

    OpenAIRE

    Zhang, J.; Gecevičius, M.; Beresna, M; Kazanskii, A.G.; Kazansky, P. G.

    2013-01-01

    Cylindrically polarized beams produced by femtosecond laser written S-waveplate are used to modify amorphous silicon films. Paradoxically, no crystallization is observed in the maximum of longitudinal electric field despite the strongest light intensity

  15. Accuracy and long-term stability of amorphous-silicon measurements

    Science.gov (United States)

    Mueller, R.

    1986-01-01

    The measurement system requirements to obtain accurate electrical performance measurements of amorphous silicon cells and modules were described. The progress achieved in modifying the Jet Propulsion Laboratory (JPL) system toward that objective were reviewed.

  16. Structural and electrical properties of metastable defects in hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Melskens, J.; Schnegg, A.; Baldansuren, A.; Lips, K.; Plokker, M.P.; Eijt, S.W.H.; Schut, H.; Fischer, M.; Zeman, M.; Smets, A.H.M.

    2015-01-01

    The structural and electrical properties of metastable defects in various types of hydrogenated amorphous silicon have been studied using a powerful combination of continuous wave electron-paramagnetic resonance spectroscopy, electron spin echo (ESE) decay measurements, and Doppler broadening positr

  17. A fax-machine amorphous silicon sensor for X-ray detection

    Energy Technology Data Exchange (ETDEWEB)

    Alberdi, J. [Association EURATOM/CIEMAT, Madrid (Spain); Barcala, J.M. [Association EURATOM/CIEMAT, Madrid (Spain); Chvatchkine, V. [Association EURATOM/CIEMAT, Madrid (Spain); Ioudine, I. [Association EURATOM/CIEMAT, Madrid (Spain); Molinero, A. [Association EURATOM/CIEMAT, Madrid (Spain); Navarrete, J.J. [Association EURATOM/CIEMAT, Madrid (Spain); Yuste, C. [Association EURATOM/CIEMAT, Madrid (Spain)

    1996-10-01

    Amorphous silicon detectors have been used, basically, as solar cells for energetics applications. As light detectors, linear sensors are used in fax and photocopier machines because they can be built with a large size, low price and have a high radiation hardness. Due to these performances, amorphous silicon detectors have been used as radiation detectors, and, presently, some groups are developing matrix amorphous silicon detectors with built-in electronics for medical X-ray applications. Our group has been working on the design and development of an X-ray image system based on a commercial fax linear amorphous silicon detector. The sensor scans the selected area and detects light produced by the X-ray in a scintillator placed on the sensor. Image-processing software produces a final image with better resolution and definition. (orig.).

  18. Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning Laser

    OpenAIRE

    Černý, R.; A. Kalbáč

    2000-01-01

    An optimum design of experimental setup for the preparation of polycrystalline silicon (pc-Si) films from amorphous layers applicable in the solar cell production is analyzed in the paper. In the computational simulations, the influence of basic characteristic parameters of the experimental procedure on the mechanisms of pc-Si lateral growth is studied. Among these parameters, the energy density of the applied laser and the thickness of the amorphous silicon (a-Si) layer are identified ...

  19. Optical determination of the mass density of amorphous and microcrystalline silicon layers with different hydrogen contents

    OpenAIRE

    Remeš, Z.; Vaněček, Milan; Torres, Pedro; Kroll, U.; Mahan, A. H.; Crandall, R. S.

    2008-01-01

    We have measured the density of amorphous and microcrystalline silicon films using an optical method. The mass density decreases with increasing hydrogen content, consistent with a hydrogenated di-vacancy model that fits the data for amorphous silicon. Material produced by hot wire assisted chemical vapour deposition, with low hydrogen content, has a higher density and is structurally different from glow discharge material with hydrogen content around 10 at.%. The lower density microcrystalli...

  20. Electronic Structure of Dangling Bonds in Amorphous Silicon Studied via a Density-Matrix Functional Method

    OpenAIRE

    Hennig, R. G.; Fedders, P. A.; Carlsson, A. E.

    2002-01-01

    A structural model of hydrogenated amorphous silicon containing an isolated dangling bond is used to investigate the effects of electron interactions on the electronic level splittings, localization of charge and spin, and fluctuations in charge and spin. These properties are calculated with a recently developed density-matrix correlation-energy functional applied to a generalized Anderson Hamiltonian, consisting of tight-binding one-electron terms parametrizing hydrogenated amorphous silicon...

  1. Experimental and Computer Modelling Studies of Metastability of Amorphous Silicon Based Solar Cells

    OpenAIRE

    Munyeme, Geoffrey

    2003-01-01

    We present a combination of experimental and computer modelling studies of the light induced degradation in the performance of amorphous silicon based single junction solar cells. Of particular interest in this study is the degradation kinetics of different types of amorphous silicon single junction solar cells and the role of dangling bond states in mediating or driving the degradation mechanism. The approach taken in this study has enabled has to examine how light induced degradation is aff...

  2. Label-Free Direct Electronic Detection of Biomolecules with Amorphous Silicon Nanostructures

    OpenAIRE

    Lund, John; Mehta, Ranjana; Parviz, Babak A.

    2006-01-01

    We present the fabrication and characterization of a nano-scale sensor made of amorphous silicon for the label-free, electronic detection of three classes of biologically important molecules: ions, oligonucleotides, and proteins. The sensor structure has an active element which is a 50 nm wide amorphous silicon semicircle and has a total footprint of less than 4 μm2. We demonstrate the functionalization of the sensor with receptor molecules and the electronic detection of three targets: H+ io...

  3. In situ ultraviolet treatment in an Ar ambient upon p-type hydrogenated amorphous silicon-carbide windows of hydrogenated amorphous silicon based solar cells

    International Nuclear Information System (INIS)

    We proposed an in situ postdeposition ultraviolet treatment in an Ar ambient (UTA) to improve the p/i interface of amorphous silicon based solar cell. We have increased the conversion efficiency by ∼16% by improving the built-in potential and reducing recombination at the p/i interface. Through spectroscopic ellipsometry and Fourier-transform infrared measurements, it is concluded that the UTA process induces structural modification of the p-type hydrogenated amorphous silicon-carbide (p-a-SiC:H) window layer. An ultrathin p-a-SiC:H contamination layer formed during the UTA process acts as a buffer layer at the interface

  4. Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon

    Institute of Scientific and Technical Information of China (English)

    Liao Yan-Ping; Shao Xi-Bin; Gao Feng-Li; Luo Wen-Sheng; Wu Yuan; Fu Guo-Zhu; Jing Hai; Ma Kai

    2006-01-01

    Polycrystalline silicon (poly-Si) thin film has been prepared by means of nickel-disilicide (NiSi2) assisted excimer laser crystallization (ELC). The process to prepare a sample includes two steps. One step consists of the formation of NiSi2 precipitates by heat-treating the dehydrogenated amorphous silicon (a-Si) coated with a thin layer of Ni. And the other step consists of the formation of poly-Si grains by means of ELC. According to the test results of scanning electron microscopy (SEM), another grain growth model named two-interface grain growth has been proposed to contrast with the conventional Ni-metal-induced lateral crystallization (Ni-MILC) model and the ELC model. That is, an additional grain growth interface other than that in conventional ELC is formed, which consists of NiSi2 precipitates and a-Si.The processes for grain growth according to various excimer laser energy densities delivered to the a-Si film have been discussed. It is discovered that grains with needle shape and most of a uniform orientation are formed which grow up with NiSi2 precipitates as seeds. The reason for the formation of such grains which are different from that of Ni-MILCwithout migration of Ni atoms is not clear. Our model and analysis point out a method to prepare grains with needle shape and mostly of a uniform orientation. If such grains are utilized to make thin-film transistor, its characteristics may be improved.

  5. Electonic properties of hydrogenated amorphous silicon-germanium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Bullot, J.; Galin, M.; Gauthier, M. (Universite de Paris-Sud, Orsay (France)); Bourdon, B. (CIT-Alcatel Transmission, Marcoussis (France))

    1983-06-01

    The electronic properties of some binary hydrogenated amorphous silicon-germanium alloys a-Sisub(x)Gesub(1-x):H in the silicon rich region (x > 0.6) are investigated. Experimental evidence is presented of photo-induced effects similar to those described in Si:H (Staebler-Wronski effect). The electronic properties are then studied from the dual point of view of the germanium content dependence and of the photo and thermal histories of the films. The dark conductivity changes between the annealed state and the light-soaked state are interpreted in terms of the variation of the temperature coefficient of the Fermi level. The photoconductivity efficiency is shown to remain close to that of a-Si:H for 1 > x >= 0.9 and to strongly decrease when the germanium content is further increased: the photoresponse of the Sisub(0.62)Gesub(0.38) alloy is 10/sup 4/ times smaller than that of a-Si:H. This deterioration of the photoconductive properties is explained in terms of the increase of the density of gap states following Ge substitution. This conclusion is based on the study of the width of the exponential absorption edge and on the results of photoconductivity time response studies. The latter data are interpreted by means of the model of Rose of trapping and recombination kinetics and it is found that for x approximately 0.6 the density of states at 0.4-0.5 eV below the mobility edge is 7 x 10/sup 17/ eV/sup -1/ cm/sup -3/ as compared to 2.4 x 10/sup 16/ eV/sup -1/ cm/sup -3/ for x = 0.97.

  6. Evaluation of Bonding Orbitals in Amorphous Silicon by Means of the Chemical Pseudopotential Method

    OpenAIRE

    Grado Caffaro, M. A.; Grado Caffaro, M.

    1994-01-01

    The chemical pseudopotential method has been used by a number of workers in order to study the valence bands of amorphous tetrahedrally bonded semiconductors. However, various problems related to this method are unsolved. In this paper, a theoretical formulation tending to clarify some of these. problems is presented. This formulation concerns bonding orbitals and is valid, in principle, for amorphous silicon.

  7. Size modulation of nanocrystalline silicon embedded in amorphous silicon oxide by Cat-CVD

    International Nuclear Information System (INIS)

    Different issues related to controlling size of nanocrystalline silicon (nc-Si) embedded in hydrogenated amorphous silicon oxide (a-SiOx:H) deposited by catalytic chemical vapor deposition (Cat-CVD) have been reported. Films were deposited using tantalum (Ta) and tungsten (W) filaments and it is observed that films deposited using tantalum filament resulted in good control on the properties. The parameters which can affect the size of nc-Si domains have been studied which include hydrogen flow rate, catalyst and substrate temperatures. The deposited samples are characterized by X-ray diffraction, HRTEM and micro-Raman spectroscopy, for determining the size of the deposited nc-Si. The crystallite formation starts for Ta-catalyst around the temperature of 1700 oC.

  8. Quantitative assessment of molecular dynamics-grown amorphous silicon and germanium films on silicon (111)

    Science.gov (United States)

    Käshammer, Peter; Borgardt, Nikolai I.; Seibt, Michael; Sinno, Talid

    2016-09-01

    Molecular dynamics based on the empirical Tersoff potential was used to simulate the deposition of amorphous silicon and germanium on silicon(111) at various deposition rates and temperatures. The resulting films were analyzed quantitatively by comparing one-dimensional atomic density profiles to experimental measurements. It is found that the simulations are able to capture well the structural features of the deposited films, which exhibit a gradual loss of crystalline order over several monolayers. A simple mechanistic model is used to demonstrate that the simulation temperature may be used to effectively accelerate the surface relaxation processes during deposition, leading to films that are consistent with experimental samples grown at deposition rates many orders-of-magnitude slower than possible in a molecular dynamics simulation.

  9. ENHANCED GROWTH RATE AND SILANE UTILIZATION IN AMORPHOUS SILICON AND NANOCRYSTALLINE-SILICON SOLAR CELL DEPOSITION VIA GAS PHASE ADDITIVES

    Energy Technology Data Exchange (ETDEWEB)

    Ridgeway, R G; Hegedus, S S; Podraza, N J

    2012-08-31

    Air Products set out to investigate the impact of additives on the deposition rate of both CSi and Si-H films. One criterion for additives was that they could be used in conventional PECVD processing, which would require sufficient vapor pressure to deliver material to the process chamber at the required flow rates. The flow rate required would depend on the size of the substrate onto which silicon films were being deposited, potentially ranging from 200 mm diameter wafers to the 5.7 m2 glass substrates used in GEN 8.5 flat-panel display tools. In choosing higher-order silanes, both disilane and trisilane had sufficient vapor pressure to withdraw gas at the required flow rates of up to 120 sccm. This report presents results obtained from testing at Air Products electronic technology laboratories, located in Allentown, PA, which focused on developing processes on a commercial IC reactor using silane and mixtures of silane plus additives. These processes were deployed to compare deposition rates and film properties with and without additives, with a goal of maximizing the deposition rate while maintaining or improving film properties.

  10. Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics.

    Science.gov (United States)

    Johlin, Eric; Al-Obeidi, Ahmed; Nogay, Gizem; Stuckelberger, Michael; Buonassisi, Tonio; Grossman, Jeffrey C

    2016-06-22

    While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improved hole collection in thick absorber layers. This is achieved by etching an array of 150 nm diameter holes into intrinsic a-Si:H and then coating the structured material with p-type a-Si:H and a conformal zinc oxide transparent conducting layer. The inclusion of these nanoholes yields relative power conversion efficiency (PCE) increases of ∼45%, from 7.2 to 10.4% PCE for small area devices. Comparisons of optical properties, time-of-flight mobility measurements, and internal quantum efficiency spectra indicate this efficiency is indeed likely occurring from an improved collection pathway provided by the nanostructuring of the devices. Finally, we estimate that through modest optimizations of the design and fabrication, PCEs of beyond 13% should be obtainable for similar devices.

  11. Power change in amorphous silicon technology by low temperature annealing

    Directory of Open Access Journals (Sweden)

    Mittal Ankit

    2015-01-01

    Full Text Available Amorphous silicon (a-Si is one of the best established thin-film solar-cell technologies. Despite its long history of research, it still has many critical issues because of its defect rich material and its susceptibility to degrade under light also called as Staebler-Wronski effect (SWE. This leads to an increase in the defect density of a-Si, but as a metastable effect it can be completely healed at temperatures above 170 °C. Our study is focused on investigating the behavior of annealing of different a-Si modules under low temperature conditions below 80 °C indicated by successive change of module power. These conditions reflect the environmental temperature impact of the modules in the field, or integrated in buildings as well. The power changes were followed by STC power rating and investigation of module-power evolution under low irradiance conditions at 50 W/m2. Our samples were recovered close to their initial state of power, reaching as high as 99% from its degraded value. This shows the influence of low temperature annealing and light on metastable module behavior in a-Si thin-film modules.

  12. Diffusion of Gold and Platinum in Amorphous Silicon

    CERN Multimedia

    Voss, T L

    2002-01-01

    By means of radiotracer experiments the diffusion of Au and Pt in radio-frequency-sputtered amorphous silicon (a-Si) was investigated. Specimens of a-Si with homogeneous doping concentrations of Au or Pt in the range 0$\\, - \\,$1,7~at.\\% were produced by co-sputtering of Si and Au or Pt, respectively. An additional tiny concentration of radioactive $^{195}$Au or $^{188}$Pt, about 10~at.ppm, was implanted at ISOLDE. The resulting Gaussian distribution of the implanted atoms served as a probe for measuring diffusion coefficients at various doping concentrations. It was found that for a given doping concentration the diffusion coefficients show Arrhenius-type temperature dependences, where the diffusion enthalpy and the pre-exponential factor depend on the doping concentration. From these results it was concluded that in a-Si Au and Pt undergo direct, interstitial-like diffusion that is retarded by temporary trapping of the radiotracer atoms at vacancy-type defects with different binding enthalpies. In the case o...

  13. Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics.

    Science.gov (United States)

    Johlin, Eric; Al-Obeidi, Ahmed; Nogay, Gizem; Stuckelberger, Michael; Buonassisi, Tonio; Grossman, Jeffrey C

    2016-06-22

    While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improved hole collection in thick absorber layers. This is achieved by etching an array of 150 nm diameter holes into intrinsic a-Si:H and then coating the structured material with p-type a-Si:H and a conformal zinc oxide transparent conducting layer. The inclusion of these nanoholes yields relative power conversion efficiency (PCE) increases of ∼45%, from 7.2 to 10.4% PCE for small area devices. Comparisons of optical properties, time-of-flight mobility measurements, and internal quantum efficiency spectra indicate this efficiency is indeed likely occurring from an improved collection pathway provided by the nanostructuring of the devices. Finally, we estimate that through modest optimizations of the design and fabrication, PCEs of beyond 13% should be obtainable for similar devices. PMID:27227369

  14. Deployable aerospace PV array based on amorphous silicon alloys

    Science.gov (United States)

    Hanak, Joseph J.; Walter, Lee; Dobias, David; Flaisher, Harvey

    1989-01-01

    The development of the first commercial, ultralight, flexible, deployable, PV array for aerospace applications is discussed. It is based on thin-film, amorphous silicon alloy, multijunction, solar cells deposited on a thin metal or polymer by a proprietary, roll-to-roll process. The array generates over 200 W at AM0 and is made of 20 giant cells, each 54 cm x 29 cm (1566 sq cm in area). Each cell is protected with bypass diodes. Fully encapsulated array blanket and the deployment mechanism weigh about 800 and 500 g, respectively. These data yield power per area ratio of over 60 W/sq m specific power of over 250 W/kg (4 kg/kW) for the blanket and 154 W/kg (6.5 kg/kW) for the power system. When stowed, the array is rolled up to a diameter of 7 cm and a length of 1.11 m. It is deployed quickly to its full area of 2.92 m x 1.11 m, for instant power. Potential applications include power for lightweight space vehicles, high altitude balloons, remotely piloted and tethered vehicles. These developments signal the dawning of a new age of lightweight, deployable, low-cost space arrays in the range from tens to tens of thousands of watts for near-term applications and the feasibility of multi-100 kW to MW arrays for future needs.

  15. Hot wire deposited hydrogenated amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mahan, A.H.; Iwaniczko, E.; Nelson, B.P.; Reedy, R.C. Jr.; Crandall, R.S. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    This paper details the results of a study in which low H content, high deposition rate hot wire (HW) deposited amorphous silicon (a-Si:H) has been incorporated into a substrate solar cell. The authors find that the treatment of the top surface of the HW i layer while it is being cooled from its high deposition temperature is crucial to device performance. They present data concerning these surface treatments, and correlate these treatments with Schottky device performance. The authors also present first generation HW n-i-p solar cell efficiency data, where a glow discharge (GD) {mu}c-Si(p) layer was added to complete the partial devices. No light trapping layer was used to increase the device Jsc. Their preliminary investigations have yielded efficiencies of up to 6.8% for a cell with a 4000 {Angstrom} thick HW i-layer, which degrade less than 10% after a 900 hour light soak. The authors suggest avenues for further improvement of their devices.

  16. Experiment and Simulation Study on the Amorphous Silicon Photovoltaic Walls

    Directory of Open Access Journals (Sweden)

    Wenjie Zhang

    2014-01-01

    Full Text Available Based on comparative study on two amorphous silicon photovoltaic walls (a-Si PV walls, the temperature distribution and the instant power were tested; and with EnergyPlus software, similar models of the walls were built to simulate annual power generation and air conditioning load. On typical sunshine day, the corresponding position temperature of nonventilated PV wall was generally 0.5~1.5°C higher than that of ventilated one, while the power generation was 0.2%~0.4% lower, which was consistent with the simulation results with a difference of 0.41% in annual energy output. As simulation results, in summer, comparing the PV walls with normal wall, the heat per unit area of these two photovoltaic walls was 5.25 kWh/m2 (nonventilated and 0.67 kWh/m2 (ventilated higher, respectively. But in winter the heat loss of nonventilated one was smaller, while ventilated PV wall was similar to normal wall. To annual energy consumption of heating and cooling, the building with ventilated PV wall and normal wall was also similar but slightly better than nonventilated one. Therefore, it is inferred that, at low latitudes, such as Zhuhai, China, air gap ventilation is suitable, while the length to thickness ratio of the air gap needs to be taken into account.

  17. Carrier transport in amorphous silicon utilizing picosecond photoconductivity

    Science.gov (United States)

    Johnson, A. M.

    1981-08-01

    The development of a high-speed electronic measurement capability permitted the direct observation of the transient photoresponse of amorphous silicon (a-Si) with a time resolution of approximately 10ps. This technique was used to measure the initial mobility of photogenerated (2.1eV) free carriers in three types of a-Si having widely different densities of structural defects (i.e., as prepared by: (1) RF glow discharge (a-Si:H); (2) chemical vapor deposition; and (3) evaporation in ultra-high vacuum). In all three types of a-Si, the same initial mobility of approximately 1 cu cm/Vs at room temperature was found. This result tends to confirm the often-made suggestion that the free carrier mobility is determined by the influence of shallow states associated with the disorder in the random atomic network, and is an intrinsic property of a-Si which is unaffected by the method of preparation. The rate of decay of the photocurrent correlates with the density of structural defects and varies from 4ps to 200ps for the three types of a-Si investigated. The initial mobility of a-Si:H was found to be thermally activated. The possible application of extended state transport controlled by multiple trapping and small polaron formation is discussed.

  18. Raman spectroscopy of PIN hydrogenated amorphous silicon solar cells

    Science.gov (United States)

    Keya, Kimitaka; Torigoe, Yoshihiro; Toko, Susumu; Yamashita, Daisuke; Seo, Hyunwoong; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu

    2015-09-01

    Light-induced degradation of hydrogenated amorphous silicon (a-Si:H) is a key issue for enhancing competitiveness in solar cell market. A-Si:H films with a lower density of Si-H2 bonds shows higher stability. Here we identified Si-H2 bonds in PIN a-Si:H solar cells fabricated by plasma CVD using Raman spectroscopy. A-Si:H solar cell has a structure of B-doped μc-SiC:H (12.5 nm)/ non-doped a-Si:H (250nm)/ P-doped μc-Si:H (40 nm) on glass substrates (Asahi-VU). By irradiating HeNe laser light from N-layer, peaks correspond to Si-H2 bonds (2100 cm-1) and Si-H bonds (2000 cm-1) have been identified in Raman scattering spectra. The intensity ratio of Si-H2 and Si-H ISiH2/ISiH is found to correlate well to light induced degradation of the cells Therefore, Raman spectroscopy is a promising method for studying origin of light-induced degradation of PIN solar cells.

  19. Progress in amorphous silicon solar cells produced by reactive sputtering

    Science.gov (United States)

    Moustakas, T. D.

    The photovoltaic properties of reactively sputtered amorphous silicon are reviewed and it is shown that efficient PIN solar cells can be fabricated by the method of sputtering. The photovoltaic properties of the intrinsic films correlate with their structural and compositional inhomogeneities. Hydrogen incorporation and small levels of phosphorus and boron impurities also affect the photovoltaic properties through reduction of residual dangling bond related defects and modification of their occupation. The optical and transport properties of the doped P and N-films were found to depend sensitively on the amount of hydrogen and boron or phosphorus incorporation into the films as well as on their degree of crystallinity. Combination of the best intrinsic and doped films leads to PIN solar cell structures generating J(sc) of 13 mA/sq cm and V(oc) of between 0.85 to 0.95 volts. The efficiency of these devices, 5 to 6 percent, is limited by the low FF, typically about 50 percent. As a further test to the potential of this technology efficient tandem solar cell structures were fabricated, and device design concepts, such as the incorporation of optically reflective back contacts were tested.

  20. Hydrogenated amorphous silicon thin film anode for proton conducting batteries

    Science.gov (United States)

    Meng, Tiejun; Young, Kwo; Beglau, David; Yan, Shuli; Zeng, Peng; Cheng, Mark Ming-Cheng

    2016-01-01

    Hydrogenated amorphous Si (a-Si:H) thin films deposited by chemical vapor deposition were used as anode in a non-conventional nickel metal hydride battery using a proton-conducting ionic liquid based non-aqueous electrolyte instead of alkaline solution for the first time, which showed a high specific discharge capacity of 1418 mAh g-1 for the 38th cycle and retained 707 mAh g-1 after 500 cycles. A maximum discharge capacity of 3635 mAh g-1 was obtained at a lower discharge rate, 510 mA g-1. This electrochemical discharge capacity is equivalent to about 3.8 hydrogen atoms stored in each silicon atom. Cyclic voltammogram showed an improved stability 300 mV below the hydrogen evolution potential. Both Raman spectroscopy and Fourier transform infrared spectroscopy studies showed no difference to the pre-existing covalent Si-H bond after electrochemical cycling and charging, indicating a non-covalent nature of the Si-H bonding contributing to the reversible hydrogen storage of the current material. Another a-Si:H thin film was prepared by an rf-sputtering deposition followed by an ex-situ hydrogenation, which showed a discharge capacity of 2377 mAh g-1.

  1. Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

    Science.gov (United States)

    Wan, Yimao; Yan, Di; Bullock, James; Zhang, Xinyu; Cuevas, Andres

    2015-12-01

    A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiNx) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiNx stack, recombination current density J0 values of 9, 11, 47, and 87 fA/cm2 are obtained on 10 Ω.cm n-type, 0.8 Ω.cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J0 on n-type 10 Ω.cm wafers is further reduced to 2.5 ± 0.5 fA/cm2 when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiNx stack is thermally stable at 400 °C in N2 for 60 min on all four c-Si surfaces. Capacitance-voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiNx stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.

  2. Electron field emission from amorphous semiconductor thin films

    International Nuclear Information System (INIS)

    The flat panel display market requires new and improved technologies in order to keep up with the requirements of modem lifestyles. Electron field emission from thin film amorphous semiconductors is potentially such a technology. For this technology to become viable, improvements in the field emitting properties of these materials must be achieved. To this end, it is important that a better understanding of the emission mechanisms responsible is attained. Amorphous carbon thin films, amorphous silicon thin films and other materials have been deposited, in-house and externally. These materials have been characterised using ellipsometry, profilometry, optical absorption, scanning electron microscopy, atomic force microscopy, electron paramagnetic resonance and Rutherford backscattering spectroscopy. An experimental system for evaluating the electron field emitting performance of thin films has been developed. In the process of developing thin film cathodes in this study, it has been possible to add a new and potentially more useful semiconductor, namely amorphous silicon, to the family of cold cathode emitters. Extensive experimental field emission data from amorphous carbon thin films, amorphous silicon thin films and other materials has been gathered. This data has been used to determine the mechanisms responsible for the observed electron emission. Preliminary computer simulations using appropriate values for the different material properties have exhibited emission mechanisms similar to those identified by experiment. (author)

  3. EFFECTS OF ARGON ON THE PROPERTIES OF RF SPUTTERED AMORPHOUS SILICON

    OpenAIRE

    Shao-Qi, Peng; Qai, Yu; Xian, Zhang; Jing, Ye

    1981-01-01

    The Effects of argon on the properties of rf sputtered amorphous silicon film have been investigated. As the sputtering argon pressure is increased from 2 to 20 mTorr, the content of argon in the amorphous silicon film increases apparently (Argon/Silicon : from 10-2 to 5 x 10-2). The other properties measured as a function of argon pressure PAr show that as the PAr is increased, the photoconductivity, resistivity (300K), conductivity activation energy and optical gap increase also, while the ...

  4. Fabrication of amorphous silicon nanoribbons by atomic force microscope tip induced local oxidation for thin film device applications

    OpenAIRE

    Pichon, Laurent; Rogel, Regis; Demami, Fouad

    2010-01-01

    WOS International audience We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as mask for the elaboration of thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as mask during plasma etching of the amorphous layer leading to the formation of nanoribbon. Such amorpho...

  5. Full dynamic resolution low lower DA-Converters for flat panel displays

    Directory of Open Access Journals (Sweden)

    C. Saas

    2006-01-01

    Full Text Available It has been shown that stepwise charging can reduce the power dissipated in the source drivers of a flat panel display. However the solution presented only provided a dynamic resolution of 3 bits which is not sufficient for obtaining a full color resolution display. In this work a further development of the basic idea is presented. The stepwise charging is increased to 4 bits and supplemented by a current source to provide an output signal which represents an 8 bit value with sufficient accuracy. Within this work the application is an AM-OLED flat panel display, but the concept can easily be applied to other display technologies like TFT-LCD as well.

  6. A novel heuristic for optimization aggregate production problem: Evidence from flat panel display in Malaysia

    Science.gov (United States)

    Al-Kuhali, K.; Hussain M., I.; Zain Z., M.; Mullenix, P.

    2015-05-01

    Aim: This paper contribute to the flat panel display industry it terms of aggregate production planning. Methodology: For the minimization cost of total production of LCD manufacturing, a linear programming was applied. The decision variables are general production costs, additional cost incurred for overtime production, additional cost incurred for subcontracting, inventory carrying cost, backorder costs and adjustments for changes incurred within labour levels. Model has been developed considering a manufacturer having several product types, which the maximum types are N, along a total time period of T. Results: Industrial case study based on Malaysia is presented to test and to validate the developed linear programming model for aggregate production planning. Conclusion: The model development is fit under stable environment conditions. Overall it can be recommended to adapt the proven linear programming model to production planning of Malaysian flat panel display industry.

  7. Dynamics of hydrogenated amorphous silicon flexural resonators for enhanced performance

    Science.gov (United States)

    Mouro, J.; Chu, V.; Conde, J. P.

    2016-04-01

    Hydrogenated amorphous silicon thin-film flexural resonators with sub-micron actuation gaps are fabricated by surface micromachining on glass substrates. Experimentally, the resonators are electrostatically actuated and their motion is optically detected. Three different configurations for the electrostatic excitation force are used to study the dynamics of the resonators. In the first case, a dc voltage (Vdc) is added to an ac voltage with variable excitation frequency (Vac(ω)) and harmonic, superharmonic, and subharmonic resonances of different orders are observed. The second case consists on mixing the dc voltage (Vdc) with an ac voltage applied at a fixed frequency of twice the natural frequency of the resonator (V(2ω0)). High-amplitude parametric resonance is excited at the natural frequency of the system, ω0. This configuration allows a separation between the frequencies of the excitation and the mechanical motion. Finally, in the third case, the dc voltage (Vdc) is combined with both ac voltages, Vac(ω) and V(2ω0), and parametric resonance is excited and emerges from the fundamental harmonic resonance peak. The single-degree-of-freedom equation of motion is modeled and discussed for each case. The nonlinearity inherent to the electrostatic force is responsible for modulating the spring constant of the system at different frequencies, giving rise to parametric resonance. These equations of motion are simulated in the time and frequency domains, providing a consistent explanation of the experimentally observed phenomena. A wide variety of possible resonance modes with different characteristics can be used advantageously in MEMS device design.

  8. Competing Technologies and Industry Evolution: The Benefits of Making Mistakes in the Flat Panel Display Industry

    OpenAIRE

    Eggers, J.P.

    2010-01-01

    Managers at firms facing uncertain competing technologies evolving concurrently face a complex decision set, including options to invest in one technology or other, both technologies, or to wait to invest. This study investigates the role that experience, learning and timing play in affecting the firm-level pros and cons of each of these four strategies in a technological competition situation. Using a unique data set on the evolution of the global flat panel display industry, this study offe...

  9. Attenuated phase-shift mask (PSM) blanks for flat panel display

    Science.gov (United States)

    Kageyama, Kagehiro; Mochizuki, Satoru; Yamakawa, Hiroyuki; Uchida, Shigeru

    2015-10-01

    The fine pattern exposure techniques are required for Flat Panel display applications as smart phone, tablet PC recently. The attenuated phase shift masks (PSM) are being used for ArF and KrF photomask lithography technique for high end pattern Semiconductor applications. We developed CrOx based large size PSM blanks that has good uniformity on optical characteristics for FPD applications. We report the basic optical characteristics and uniformity, stability data of large sized CrOx PSM blanks.

  10. Fiber Optic Excitation of Silicon Microspheres in Amorphous and Crystalline Fluids

    Science.gov (United States)

    Yılmaz, Huzeyfe; Yılmaz, Hasan; Sharif Murib, Mohammed; Serpengüzel, Ali

    2016-03-01

    This study investigates the optical resonance spectra of free-standing monolithic single crystal silicon microspheres immersed in various amorphous fluids, such as air, water, ethylene glycol, and 4-Cyano-4'-pentylbiphenyl nematic liquid crystal. For the various amorphous fluids, morphology-dependent resonances with quality factors on the order of 105 are observed at 1428 nm. The mode spacing is always on the order of 0.23 nm. The immersion in various amorphous fluids affects the spectral response of the silicon microsphere and heralds this technique for use in novel optofluidics applications. Even though the nematic liquid crystal is a highly birefringent, scattering, and high-index optical medium, morphology-dependent resonances with quality factors on the order of 105 are observed at 1300 nm in the elastic scattering spectra of the silicon microsphere, realizing a liquid-crystal-on-silicon geometry. The relative refractive index and the size parameter of the silicon microsphere are the parameters that affect the resonance structure. The more 4-Cyano-4'-pentylbiphenyl interacting with the silicon microsphere, the lower the quality factor of the resonances is. The more 4-Cyano-4'-pentylbiphenyl is interacting with the silicon microsphere, the lower the mode spacing Δλ of the resonances is. The silicon microspheres wetted with nematic liquid crystal can be used for optically addressed liquid-crystal-on-silicon displays, light valve applications, or reconfigurable optical networks.

  11. Amorphous-silicon module hot-spot testing

    Science.gov (United States)

    Gonzalez, C. C.

    1985-01-01

    Hot spot heating occurs when cell short-circuit current is lower than string operating current. Amorphous cell hot spot are tested to develop the techniques required for performing reverse bias testing of amorphous cells. Also, to quantify the response of amorphous cells to reverse biasing. Guidelines are developed from testing for reducing hot spot susceptibility of amorphous modules and to develop a qualification test for hot spot testing of amorphous modules. It is concluded that amorphous cells undergo hot spot heating similarly to crystalline cells. Comparison of results obtained with submodules versus actual modules indicate heating levels lower in actual modules. Module design must address hot spot testing and hot spot qualification test conducted on modules showed no instabilities and minor cell erosion.

  12. Formation of amorphous silicon by light ion damage

    International Nuclear Information System (INIS)

    Amorphization by implantation of boron ions (which is the lightest element generally used in I.C. fabrication processes) has been systematically studied for various temperatures, various voltages and various dose rates. Based on theoretical considerations and experimental results, a new amorphization model for light and intermediate mass ion damage is proposed consisting of two stages. The role of interstitial type point defects or clusters in amorphization is emphasized. Due to the higher mobility of interstitials out-diffusion to the surface particularly during amorphization with low energy can be significant. From a review of the idealized amorphous structure, diinterstitial-divacancy pairs are suggested to be the embryos of amorphous zones formed during room temperature implantation. The stacking fault loops found in specimens implanted with boron at room temperature are considered to be the origin of secondary defects formed during annealing

  13. High-performance flat-panel solar thermoelectric generators with high thermal concentration.

    Science.gov (United States)

    Kraemer, Daniel; Poudel, Bed; Feng, Hsien-Ping; Caylor, J Christopher; Yu, Bo; Yan, Xiao; Ma, Yi; Wang, Xiaowei; Wang, Dezhi; Muto, Andrew; McEnaney, Kenneth; Chiesa, Matteo; Ren, Zhifeng; Chen, Gang

    2011-05-01

    The conversion of sunlight into electricity has been dominated by photovoltaic and solar thermal power generation. Photovoltaic cells are deployed widely, mostly as flat panels, whereas solar thermal electricity generation relying on optical concentrators and mechanical heat engines is only seen in large-scale power plants. Here we demonstrate a promising flat-panel solar thermal to electric power conversion technology based on the Seebeck effect and high thermal concentration, thus enabling wider applications. The developed solar thermoelectric generators (STEGs) achieved a peak efficiency of 4.6% under AM1.5G (1 kW m(-2)) conditions. The efficiency is 7-8 times higher than the previously reported best value for a flat-panel STEG, and is enabled by the use of high-performance nanostructured thermoelectric materials and spectrally-selective solar absorbers in an innovative design that exploits high thermal concentration in an evacuated environment. Our work opens up a promising new approach which has the potential to achieve cost-effective conversion of solar energy into electricity.

  14. Portable low-cost flat panel detectors for real-time digital radiography

    Energy Technology Data Exchange (ETDEWEB)

    Iovea, Mihai; Neagu, Marian; Stefanescu, Bogdan; Mateiasi, Gabriela; Porosnicu, Ioana; Angheluta, Elena [Accent Pro 2000 S.R.L., Bucharest (Romania)

    2015-07-01

    The X-ray inspection is one of the most common used non-destructive testing methods in industry applications, but for the portable X-ray digital solution are not so many accessible, low-cost and versatile detection devices. The efficiency of a non-destructive X-ray portable device is represented by the quality of digital images, by its low acquisition time combined with a high resolution, in condition of low noise and at an affordable cost. The paper presents two X-ray portable imaging systems developed by us, suitable also for aerospace NDT applications, which are also very versatile for being easily adapted for other fields that requires mobile solutions. The first device described in the paper represent a portable large-size (210 mm X 550 mm) and high-resolution (27/54 microns) flat panel detector based on linear translation of a X-Ray TDI detector, destined for various components/parts real-time transmission measurements. The second system it is also a flat panel detectors, with a size of 510 mm X 610 mm, with the detector size from 0.2 mm until 1.5 mm, which can operate by applying the dual-energy method, very useful for discriminating materials by evaluating their Atomic effective number. The high resolution and low-cost of this flat-panels widens their applicability by covering large requirements, from identifying unwanted materials within a structure until detection of very thin cracks in complex components.

  15. Rotational flat-panel computed tomography in diagnostic and interventional neuroradiology

    Energy Technology Data Exchange (ETDEWEB)

    Doerfler, A.; Struffert, T.; Engelhorn, T.; Richter, C. [Abt. fuer Neuroradiologie, Universitaetsklinikum Erlangen, Friedrich-Alexander-Univ. Erlangen-Nuernberg (Germany)

    2008-10-15

    Originally aimed at improving standard radiography by providing higher absorption efficiency and a wider dynamic range than available with X-ray film or film-screen combinations, flat-panel detector technology has become widely accepted for neuroangiographic imaging. In particular flat-panel detector computed tomography (FD-CT) which uses rotational C-arm-mounted flat-panel detector technology is capable of volumetric imaging with high spatial resolution. As ''Angiographic CT'' FD-CT may be helpful during many diagnostic and neurointerventional procedures, i.e. intracranial stenting for cerebrovascular stenoses, stent-assisted coil embolization of wide-necked cerebral aneurysms and embolizations of arteriovenous malformations. By providing morphologic, CT-like images of the brain within the angio suite, FD-CT is able to rapidly visualize periprocedural hemorrhage and may thus improve rapid complication management without the need for patient transfer. In addition, myelography and postmyelographic FD-CT imaging can be carried out using a single machine. Spinal interventions, such as kyphoplasty or vertebroplasty might also benefit from FD-CT. This paper briefly reviews the technical principles of FD technology and then focuses on possible applications in diagnostic and interventional neuroradiology. (orig.)

  16. High-performance flat-panel solar thermoelectric generators with high thermal concentration.

    Science.gov (United States)

    Kraemer, Daniel; Poudel, Bed; Feng, Hsien-Ping; Caylor, J Christopher; Yu, Bo; Yan, Xiao; Ma, Yi; Wang, Xiaowei; Wang, Dezhi; Muto, Andrew; McEnaney, Kenneth; Chiesa, Matteo; Ren, Zhifeng; Chen, Gang

    2011-07-01

    The conversion of sunlight into electricity has been dominated by photovoltaic and solar thermal power generation. Photovoltaic cells are deployed widely, mostly as flat panels, whereas solar thermal electricity generation relying on optical concentrators and mechanical heat engines is only seen in large-scale power plants. Here we demonstrate a promising flat-panel solar thermal to electric power conversion technology based on the Seebeck effect and high thermal concentration, thus enabling wider applications. The developed solar thermoelectric generators (STEGs) achieved a peak efficiency of 4.6% under AM1.5G (1 kW m(-2)) conditions. The efficiency is 7-8 times higher than the previously reported best value for a flat-panel STEG, and is enabled by the use of high-performance nanostructured thermoelectric materials and spectrally-selective solar absorbers in an innovative design that exploits high thermal concentration in an evacuated environment. Our work opens up a promising new approach which has the potential to achieve cost-effective conversion of solar energy into electricity. PMID:21532584

  17. Memory effect under pressure in low density amorphous silicon

    OpenAIRE

    Garg, Nandini; Pandey, K. K.; K. V. Shanavas; Betty, C. A.; Sharma, Surinder M

    2010-01-01

    Our investigations on porous Si show that on increase of pressure it undergoes crystalline phase transitions instead of pressure induced amorphization - claimed earlier, and the amorphous phase appears only on release of pressure. This amorphous phase, when subjected to higher pressures, transforms reversibly to a higher coordinated primitive hexagonal phase showing a kind of memory effect which may be the only example of its kind in the elemental solids. First principles calculations and the...

  18. Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon

    Science.gov (United States)

    Zhu, M. F.; Suni, I.; Nicolet, M.-A.; Sands, T.

    1984-01-01

    Wiley et al. (1982) have studied sputtered amorphous films of Nb-Ni, Mo-Ni, Si-W, and Si-Mo. Kung et al. (1984) have found that amorphous Ni-Mo films as diffusion barriers between multilayer metallizations on silicon demonstrate good electrical and thermal stability. In the present investigation, the Ni-W system was selected because it is similar to the Ni-Mo system. However, W has a higher silicide formation temperature than Mo. Attention is given to aspects of sample preparation, sample characterization, the interaction between amorphous Ni-W films and Si, the crystallization of amorphous Ni(36)W(64) films on SiO2, amorphous Ni-N-W films, silicide formation and phase separation, and the crystallization of amorphous Ni(36)W(64) and Ni(30)N(21)W(49) layers.

  19. Preliminary performance of image quality for a low-dose C-arm CT system with a flat-panel detector

    International Nuclear Information System (INIS)

    Digital flat panel imager (FPI)-based cone-beam computed tomography (CBCT) has been widely used in C-arm imaging for spine surgery and interventional procedures. The system provides real-time fluoroscopy with high spatial resolution and three-dimensional (3D) visualization of anatomical structure without the need for patient transportation in interventional suite. In this work, a prototype CBCT imaging platform with continuous single rotation about the gantry was developed by using a large-area flat-panel detector with amorphous Si-based thin film transistor matrix. The different 2D projection images were acquired during constant gantry velocity for reconstructed images at a tube voltage of 80–120 kVp, and different current (10–50 mA) conditions. Various scan protocols were applied to a chest phantom human by changing the number of projection images and scanning angles. The projections were then reconstructed into a volumetric data of sections by using a 3D reconstruction algorithm (e.g., filtered back projection). The preliminary quantitative X-ray performance of our CBCT system was investigated by using the American Association of Physicists in Medicine CT phantom in terms of spatial resolution, contrast resolution, and CT number linearity for mobile or fixed C-arm based CBCT application with limited rotational geometry. The novel results of the projection data with different scanning angles and angular increments in the orbital gantry platform were acquired and evaluated experimentally

  20. Preliminary performance of image quality for a low-dose C-arm CT system with a flat-panel detector

    Science.gov (United States)

    Kyung Cha, Bo; Seo, Chang-Woo; Yang, Keedong; Jeon, Seongchae; Huh, Young

    2015-06-01

    Digital flat panel imager (FPI)-based cone-beam computed tomography (CBCT) has been widely used in C-arm imaging for spine surgery and interventional procedures. The system provides real-time fluoroscopy with high spatial resolution and three-dimensional (3D) visualization of anatomical structure without the need for patient transportation in interventional suite. In this work, a prototype CBCT imaging platform with continuous single rotation about the gantry was developed by using a large-area flat-panel detector with amorphous Si-based thin film transistor matrix. The different 2D projection images were acquired during constant gantry velocity for reconstructed images at a tube voltage of 80-120 kVp, and different current (10-50 mA) conditions. Various scan protocols were applied to a chest phantom human by changing the number of projection images and scanning angles. The projections were then reconstructed into a volumetric data of sections by using a 3D reconstruction algorithm (e.g., filtered back projection). The preliminary quantitative X-ray performance of our CBCT system was investigated by using the American Association of Physicists in Medicine CT phantom in terms of spatial resolution, contrast resolution, and CT number linearity for mobile or fixed C-arm based CBCT application with limited rotational geometry. The novel results of the projection data with different scanning angles and angular increments in the orbital gantry platform were acquired and evaluated experimentally.

  1. Preliminary performance of image quality for a low-dose C-arm CT system with a flat-panel detector

    Energy Technology Data Exchange (ETDEWEB)

    Kyung Cha, Bo [Advanced Medical Device Research Center, Korea Electrotechnology Research Institute, Ansan (Korea, Republic of); Seo, Chang-Woo [Department of Radiation Convergence Engineering, College of Health Science, Yonsei University, Wonju (Korea, Republic of); Yang, Keedong [Advanced Medical Device Research Center, Korea Electrotechnology Research Institute, Ansan (Korea, Republic of); Jeon, Seongchae, E-mail: sarim@keri.re.kr [Advanced Medical Device Research Center, Korea Electrotechnology Research Institute, Ansan (Korea, Republic of); Huh, Young [Advanced Medical Device Research Center, Korea Electrotechnology Research Institute, Ansan (Korea, Republic of)

    2015-06-01

    Digital flat panel imager (FPI)-based cone-beam computed tomography (CBCT) has been widely used in C-arm imaging for spine surgery and interventional procedures. The system provides real-time fluoroscopy with high spatial resolution and three-dimensional (3D) visualization of anatomical structure without the need for patient transportation in interventional suite. In this work, a prototype CBCT imaging platform with continuous single rotation about the gantry was developed by using a large-area flat-panel detector with amorphous Si-based thin film transistor matrix. The different 2D projection images were acquired during constant gantry velocity for reconstructed images at a tube voltage of 80–120 kVp, and different current (10–50 mA) conditions. Various scan protocols were applied to a chest phantom human by changing the number of projection images and scanning angles. The projections were then reconstructed into a volumetric data of sections by using a 3D reconstruction algorithm (e.g., filtered back projection). The preliminary quantitative X-ray performance of our CBCT system was investigated by using the American Association of Physicists in Medicine CT phantom in terms of spatial resolution, contrast resolution, and CT number linearity for mobile or fixed C-arm based CBCT application with limited rotational geometry. The novel results of the projection data with different scanning angles and angular increments in the orbital gantry platform were acquired and evaluated experimentally.

  2. Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Wan, Yimao, E-mail: yimao.wan@anu.edu.au; Yan, Di; Bullock, James; Zhang, Xinyu; Cuevas, Andres [Research School of Engineering, The Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

    2015-12-07

    A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiN{sub x}) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiN{sub x} stack, recombination current density J{sub 0} values of 9, 11, 47, and 87 fA/cm{sup 2} are obtained on 10 Ω·cm n-type, 0.8 Ω·cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J{sub 0} on n-type 10 Ω·cm wafers is further reduced to 2.5 ± 0.5 fA/cm{sup 2} when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiN{sub x} stack is thermally stable at 400 °C in N{sub 2} for 60 min on all four c-Si surfaces. Capacitance–voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiN{sub x} stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.

  3. Core-shell amorphous silicon-carbon nanoparticles for high performance anodes in lithium ion batteries

    Science.gov (United States)

    Sourice, Julien; Bordes, Arnaud; Boulineau, Adrien; Alper, John P.; Franger, Sylvain; Quinsac, Axelle; Habert, Aurélie; Leconte, Yann; De Vito, Eric; Porcher, Willy; Reynaud, Cécile; Herlin-Boime, Nathalie; Haon, Cédric

    2016-10-01

    Core-shell silicon-carbon nanoparticles are attractive candidates as active material to increase the capacity of Li-ion batteries while mitigating the detrimental effects of volume expansion upon lithiation. However crystalline silicon suffers from amorphization upon the first charge/discharge cycle and improved stability is expected in starting with amorphous silicon. Here we report the synthesis, in a single-step process, of amorphous silicon nanoparticles coated with a carbon shell (a-Si@C), via a two-stage laser pyrolysis where decomposition of silane and ethylene are conducted in two successive reaction zones. Control of experimental conditions mitigates silicon core crystallization as well as formation of silicon carbide. Auger electron spectroscopy and scanning transmission electron microscopy show a carbon shell about 1 nm in thickness, which prevents detrimental oxidation of the a-Si cores. Cyclic voltammetry demonstrates that the core-shell composite reaches its maximal lithiation during the first sweep, thanks to its amorphous core. After 500 charge/discharge cycles, it retains a capacity of 1250 mAh.g-1 at a C/5 rate and 800 mAh.g-1 at 2C, with an outstanding coulombic efficiency of 99.95%. Moreover, post-mortem observations show an electrode volume expansion of less than 20% and preservation of the nanostructuration.

  4. Effect of light trapping in an amorphous silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Iftiquar, S.M., E-mail: iftiquar@skku.edu [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Juyeon; Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Cho, Jaehyun; Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Jinjoo [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Bong, Sungjae [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Sunbo [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2015-07-31

    Light trapping in amorphous silicon based solar cell has been investigated theoretically. The substrate for these cells can be textured, including pyramidally textured c-Si wafer, to improve capture of incident light. A thin silver layer, deposited on the substrate of an n–i–p cell, ultimately goes at the back of the cell structure and can act a back reflector to improve light trapping. The two physical solar cells we investigated had open circuit voltages (V{sub oc}) of 0.87, 0.90 V, short circuit current densities (J{sub sc}) of 14.2, 15.36 mA/cm{sup 2} respectively. The first cell was investigated for the effect on its performance while having and not having light trapping scheme (LT), when thickness of the active layer (d{sub i}) was changed in the range of 100 nm to 800 nm. In both the approaches, for having or not having LT, the short circuit current density increases with d{sub i} while the V{sub oc} and fill factor, decreases steadily. However, maximum cell efficiency can be obtained when d{sub i} = 400 nm, and hence it was considered optimized thickness of the active layer, that was used for further investigation. With the introduction of light trapping to the second cell, it shows a further enhancement in J{sub sc} and red response of the external quantum efficiency to 16.6 mA/cm{sup 2} and by 11.1% respectively. Considering multiple passages of light inside the cell, we obtained an improvement in cell efficiency from 9.7% to 10.6%. - Highlights: • A theoretical analysis of light trapping in p–i–n and n–i–p type solar cells • J{sub sc} increases and V{sub oc} decreases with the increase in i-layer thickness. • Observed optimized thickness of i-layer as 400 nm • J{sub sc} improved from 15.4 mA/cm{sup 2} to 16.6 mA/cm{sup 2} due to the light trapping. • Efficiency (η) improved from 9.7% to 10.6% due to better red response of the EQE.

  5. Effect of light trapping in an amorphous silicon solar cell

    International Nuclear Information System (INIS)

    Light trapping in amorphous silicon based solar cell has been investigated theoretically. The substrate for these cells can be textured, including pyramidally textured c-Si wafer, to improve capture of incident light. A thin silver layer, deposited on the substrate of an n–i–p cell, ultimately goes at the back of the cell structure and can act a back reflector to improve light trapping. The two physical solar cells we investigated had open circuit voltages (Voc) of 0.87, 0.90 V, short circuit current densities (Jsc) of 14.2, 15.36 mA/cm2 respectively. The first cell was investigated for the effect on its performance while having and not having light trapping scheme (LT), when thickness of the active layer (di) was changed in the range of 100 nm to 800 nm. In both the approaches, for having or not having LT, the short circuit current density increases with di while the Voc and fill factor, decreases steadily. However, maximum cell efficiency can be obtained when di = 400 nm, and hence it was considered optimized thickness of the active layer, that was used for further investigation. With the introduction of light trapping to the second cell, it shows a further enhancement in Jsc and red response of the external quantum efficiency to 16.6 mA/cm2 and by 11.1% respectively. Considering multiple passages of light inside the cell, we obtained an improvement in cell efficiency from 9.7% to 10.6%. - Highlights: • A theoretical analysis of light trapping in p–i–n and n–i–p type solar cells • Jsc increases and Voc decreases with the increase in i-layer thickness. • Observed optimized thickness of i-layer as 400 nm • Jsc improved from 15.4 mA/cm2 to 16.6 mA/cm2 due to the light trapping. • Efficiency (η) improved from 9.7% to 10.6% due to better red response of the EQE

  6. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors.

    Science.gov (United States)

    Marrs, Michael A; Raupp, Gregory B

    2016-01-01

    Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm² and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate. PMID:27472329

  7. Infrared Insight into the Network of Hydrogenated Amorphous and Polycrystalline Silicon thin Films

    Directory of Open Access Journals (Sweden)

    Jarmila Mullerova

    2006-01-01

    Full Text Available IR measurements were carried out on both amorphous and polycrystalline silicon samples deposited by PECVDon glass substrate. The transition from amorphous to polycrystalline phase was achieved by increasing dilution of silaneplasma at the deposition process. The samples were found to be mixed phase materials. Commonly, infrared spectra ofhydrogenated silicon thin films yield information about microstructure, hydrogen content and hydrogen bonding to silicon. Inthis paper, additional understanding was retrieved from infrared response. Applying standard optical laws, effective mediatheory and Clausius-Mossoti approach concerning the Si-Si and Si-H bonds under IR irradiation as individual oscillators,refractive indices in the long wavelength limit, crystalline, amorphous and voids volume fractions and the mass density of thefilms were determined. The mass density was found to decrease with increasing crystalline volume fraction, which can beattributed to the void-dominated mechanism of network formation.

  8. Stable, high-efficiency amorphous silicon solar cells with low hydrogen content

    Science.gov (United States)

    Fortmann, C. M.; Hegedus, S. S.

    1992-12-01

    Results and conclusions obtained during the investigation of amorphous silicon, amorphous silicon based alloy materials, and solar cells fabricated by photo-chemical vapor and glow discharge depositions are reported. Investigation of the effects of the hydrogen content in a-Si:H i-layers in amorphous silicon solar cells show that cells with lowered hydrogen content i-layers are more stable. A classical thermodynamic formulation of the Staebler-Wronski effect has been developed for standard solar cell operating temperatures and illuminations. Methods have been developed to extract a lumped equivalent circuit from the current voltage characteristic of a single junction solar cell in order to predict its behavior in a multijunction device.

  9. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors

    Directory of Open Access Journals (Sweden)

    Michael A. Marrs

    2016-07-01

    Full Text Available Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm2 and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

  10. Stable, high-efficiency amorphous silicon solar cells with low hydrogen content

    Energy Technology Data Exchange (ETDEWEB)

    Fortmann, C.M.; Hegedus, S.S. (Institute of Energy Conversion, Newark, DE (United States))

    1992-12-01

    Results and conclusions obtained during a research program of the investigation of amorphous silicon and amorphous silicon based alloy materials and solar cells fabricated by photo-chemical vapor and glow discharge depositions are reported. Investigation of the effects of the hydrogen content in a-si:H i-layers in amorphous silicon solar cells show that cells with lowered hydrogen content i-layers are more stable. A classical thermodynamic formulation of the Staebler-Wronski effect has been developed for standard solar cell operating temperatures and illuminations. Methods have been developed to extract a lumped equivalent circuit from the current voltage characteristic of a single junction solar cell in order to predict its behavior in a multijunction device.

  11. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors

    Science.gov (United States)

    Marrs, Michael A.; Raupp, Gregory B.

    2016-01-01

    Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm2 and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate. PMID:27472329

  12. Programmable SERS active substrates for chemical and biosensing applications using amorphous/crystalline hybrid silicon nanomaterial

    OpenAIRE

    Jeffery Alexander Powell; Krishnan Venkatakrishnan; Bo Tan

    2016-01-01

    We present the creation of a unique nanostructured amorphous/crystalline hybrid silicon material that exhibits surface enhanced Raman scattering (SERS) activity. This nanomaterial is an interconnected network of amorphous/crystalline nanospheroids which form a nanoweb structure; to our knowledge this material has not been previously observed nor has it been applied for use as a SERS sensing material. This material is formed using a femtosecond synthesis technique which facilitates a laser plu...

  13. Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

    OpenAIRE

    Fedorenko, Yanina G.; Hughes, Mark A.; Colaux, Julien L.; Jeynes, C.; Gwilliam, Russell M.; Homewood, Kevin P.; Yao, Jin; Hewak, Dan W.; Lee, Tae-Hoon; Elliott, Stephen R; Gholipour, B.; Curry, Richard J.

    2014-01-01

    Doping of amorphous chalcogenide films of rather dissimilar bonding type and resistivity, namely, Ga-La-S, GeTe, and Ge-Sb-Te by means of ion implantation of bismuth is considered. To characterize defects induced by ion-beam implantation space-charge-limited conduction and capacitance-voltage characteristics of amorphous chalcogenide/silicon heterojunctions are investigated. It is shown that ion implantation introduces substantial defect densities in the films and their interfaces with silico...

  14. Direct simulation of ion beam induced stressing and amorphization of silicon

    OpenAIRE

    Beardmore, Keith M.; Gronbech-Jensen, Niels

    1999-01-01

    Using molecular dynamics (MD) simulation, we investigate the mechanical response of silicon to high dose ion-irradiation. We employ a realistic and efficient model to directly simulate ion beam induced amorphization. Structural properties of the amorphized sample are compared with experimental data and results of other simulation studies. We find the behavior of the irradiated material is related to the rate at which it can relax. Depending upon the ability to deform, we observe either the ge...

  15. Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix.

    Science.gov (United States)

    Yamada, Shigeru; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; Konagai, Makoto

    2014-01-01

    We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching. PMID:24521208

  16. Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix

    OpenAIRE

    Yamada, Shigeru; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; KONAGAI, MAKOTO

    2014-01-01

    We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by ...

  17. Light-induced Voc increase and decrease in high-efficiency amorphous silicon solar cells

    OpenAIRE

    Stuckelberger, Michael; Riesen, Yannick Samuel; Despeisse, Matthieu; Schüttauf, Jan-Willem Alexander; Haug, Franz-Josef; Ballif, Christophe

    2014-01-01

    High-efficiency amorphous silicon (a-Si:H) solar cells were deposited with different thicknesses of the p-type amorphous silicon carbide layer on substrates of varying roughness. We observed a light-induced open-circuit voltage (Voc) increase upon light soaking for thin p-layers, but a decrease for thick p-layers. Further, the Voc increase is enhanced with increasing substrate roughness. After correction of the p-layer thickness for the increased surface area of rough substrates, we can exclu...

  18. Rare-earth Doped Amorphous Silicon Microdisk and Microstadium Resonators with Emission at 1550nm

    CERN Document Server

    Figueira, D S L

    2007-01-01

    Microdisks and microstadium resonators were fabricated on erbium doped amorphous hydrogenated silicon (a-Si:H) layers sandwiched in air and native SiO2 on Si substrates. Annealing condition is optimized to allow large emission at 1550 nm for samples with erbium concentrations as high as 1.02x10^20 atoms/cm3. Near field scanning optical microscopy shows evidences of the simultaneous presence of bow-tie and diamond scars. These modes indicate the high quality of the resonators and the potentiality for achieving amorphous silicon microcavity lasers.

  19. Hydrogenated amorphous silicon radiation detectors: Material parameters, radiation hardness, charge collection

    International Nuclear Information System (INIS)

    For nearly two decades now hydrogenated amorphous silicon has generated considerable interest for its potential use in various device applications namely, solar cells, electrolithography, large-area electronics etc. The development of efficient and economic solar cells has been on the forefront of this research. This interest in hydrogenated amorphous silicon has been motivated by the fact that amorphous silicon can be deposited over a large area at relatively low cost compared to crystalline silicon. Hydrogenated amorphous silicon, frequently abbreviated as a-Si:H, used in solar-cell applications is a micron or less thick. The basic device structure is a p-i-n diode where the i layer is the active layer for radiation to interact. This is so because intrinsic a-Si:H has superior electrical properties in comparison to doped a-Si:H which serves the purpose of forming a potential barrier on either end of the i layer. The research presented in this dissertation was undertaken to study the properties of a-Si:H for radiation detection applications in physics and medicine

  20. A semiempirical linear model of indirect, flat-panel x-ray detectors

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Shih-Ying; Yang Kai; Abbey, Craig K.; Boone, John M. [Department of Biomedical Engineering, University of California, Davis, California, One Shields Avenue, Davis, California 95616 (United States) and Department of Radiology, University of California, Davis, Medical Center, 4860 Y Street, Ambulatory Care Center Suite 0505, Sacramento, California 95817 (United States); Department of Radiology, University of California, Davis, Medical Center, 4860 Y Street, Ambulatory Care Center Suite 0505, Sacramento, California 95817 (United States); Department of Psychological and Brain Sciences, University of California, Santa Barbara, California 92106 (United States); Department of Biomedical Engineering, University of California, Davis, California, One Shields Avenue, Davis, California 95616 (United States) and Department of Radiology, University of California, Davis, Medical Center, 4860 Y Street, Ambulatory Care Center Suite 3100, Sacramento, California 95817 (United States)

    2012-04-15

    Purpose: It is important to understand signal and noise transfer in the indirect, flat-panel x-ray detector when developing and optimizing imaging systems. For optimization where simulating images is necessary, this study introduces a semiempirical model to simulate projection images with user-defined x-ray fluence interaction. Methods: The signal and noise transfer in the indirect, flat-panel x-ray detectors is characterized by statistics consistent with energy-integration of x-ray photons. For an incident x-ray spectrum, x-ray photons are attenuated and absorbed in the x-ray scintillator to produce light photons, which are coupled to photodiodes for signal readout. The signal mean and variance are linearly related to the energy-integrated x-ray spectrum by empirically determined factors. With the known first- and second-order statistics, images can be simulated by incorporating multipixel signal statistics and the modulation transfer function of the imaging system. To estimate the semiempirical input to this model, 500 projection images (using an indirect, flat-panel x-ray detector in the breast CT system) were acquired with 50-100 kilovolt (kV) x-ray spectra filtered with 0.1-mm tin (Sn), 0.2-mm copper (Cu), 1.5-mm aluminum (Al), or 0.05-mm silver (Ag). The signal mean and variance of each detector element and the noise power spectra (NPS) were calculated and incorporated into this model for accuracy. Additionally, the modulation transfer function of the detector system was physically measured and incorporated in the image simulation steps. For validation purposes, simulated and measured projection images of air scans were compared using 40 kV/0.1-mm Sn, 65 kV/0.2-mm Cu, 85 kV/1.5-mm Al, and 95 kV/0.05-mm Ag. Results: The linear relationship between the measured signal statistics and the energy-integrated x-ray spectrum was confirmed and incorporated into the model. The signal mean and variance factors were linearly related to kV for each filter material (r

  1. Anode properties of silicon-rich amorphous silicon suboxide films in all-solid-state lithium batteries

    Science.gov (United States)

    Miyazaki, Reona; Ohta, Narumi; Ohnishi, Tsuyoshi; Takada, Kazunori

    2016-10-01

    This paper reports the effects of introducing oxygen into amorphous silicon films on their anode properties in all-solid-state lithium batteries. Although poor cycling performance is a critical issue in silicon anodes, it has been effectively improved by introducing even a small amount of oxygen, that is, even in Si-rich amorphous silicon suboxide (a-SiOx) films. Because of the small amount of oxygen in the films, high cycling performance has been achieved without lowering the capacity and power density: an a-Si film delivers discharge capacity of 2500 mAh g-1 under high discharge current density of 10 mA cm-2 (35 C). These results demonstrate that a-SiOx is a promising candidate for high-capacity anode materials in solid-state batteries.

  2. Designing, Modeling, Constructing, and Testing a Flat Panel Speaker and Sound Diffuser for a Simulator

    Science.gov (United States)

    Dillon, Christina

    2013-01-01

    The goal of this project was to design, model, build, and test a flat panel speaker and frame for a spherical dome structure being made into a simulator. The simulator will be a test bed for evaluating an immersive environment for human interfaces. This project focused on the loud speakers and a sound diffuser for the dome. The rest of the team worked on an Ambisonics 3D sound system, video projection system, and multi-direction treadmill to create the most realistic scene possible. The main programs utilized in this project, were Pro-E and COMSOL. Pro-E was used for creating detailed figures for the fabrication of a frame that held a flat panel loud speaker. The loud speaker was made from a thin sheet of Plexiglas and 4 acoustic exciters. COMSOL, a multiphysics finite analysis simulator, was used to model and evaluate all stages of the loud speaker, frame, and sound diffuser. Acoustical testing measurements were utilized to create polar plots from the working prototype which were then compared to the COMSOL simulations to select the optimal design for the dome. The final goal of the project was to install the flat panel loud speaker design in addition to a sound diffuser on to the wall of the dome. After running tests in COMSOL on various speaker configurations, including a warped Plexiglas version, the optimal speaker design included a flat piece of Plexiglas with a rounded frame to match the curvature of the dome. Eight of these loud speakers will be mounted into an inch and a half of high performance acoustic insulation, or Thinsulate, that will cover the inside of the dome. The following technical paper discusses these projects and explains the engineering processes used, knowledge gained, and the projected future goals of this project

  3. Computational Evaluation of Amorphous Carbon Coating for Durable Silicon Anodes for Lithium-Ion Batteries

    OpenAIRE

    Jeongwoon Hwang; Jisoon Ihm; Kwang-Ryeol Lee; Seungchul Kim

    2015-01-01

    We investigate the structural, mechanical, and electronic properties of graphite-like amorphous carbon coating on bulky silicon to examine whether it can improve the durability of the silicon anodes of lithium-ion batteries using molecular dynamics simulations and ab-initio electronic structure calculations. Structural models of carbon coating are constructed using molecular dynamics simulations of atomic carbon deposition with low incident energies (1–16 eV). As the incident energy decrease...

  4. Proton irradiation effects of amorphous silicon solar cell for solar power satellite

    Energy Technology Data Exchange (ETDEWEB)

    Morita, Yousuke; Oshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Sasaki, Susumu; Kuroda, Hideo; Ushirokawa, Akio

    1997-03-01

    Flexible amorphous silicon(fa-Si) solar cell module, a thin film type, is regarded as a realistic power generator for solar power satellite. The radiation resistance of fa-Si cells was investigated by the irradiations of 3,4 and 10 MeV protons. The hydrogen gas treatment of the irradiated fa-Si cells was also studied. The fa-Si cell shows high radiation resistance for proton irradiations, compared with a crystalline silicon solar cell. (author)

  5. Evaluation of Sparse-view Reconstruction from Flat-panel-detector Cone-beam CT

    OpenAIRE

    Bian, J.; Siewerdsen, J. H.; Han, X.; Sidky, E. Y.; Prince, J. L.; Pelizzari, C. A.; Pan, X.

    2010-01-01

    Flat-panel-detector X-ray cone-beam computed tomography (CBCT) is used in a rapidly increasing host of imaging applications, including image-guided surgery and radiotherapy. The purpose of the work is to investigate and evaluate image reconstruction from data collected at projection views significantly fewer than what is used in current CBCT imaging. Specifically, we carried out imaging experiments by use of a bench-top CBCT system that was designed to mimic imaging conditions in image-guided...

  6. Physics and technology of amorphous-crystalline heterostructure silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sark, Wilfried G.J.H.M. van [Utrecht Univ. (Netherlands). Copernicus Institute, Science Technology and Society; Roca, Francesco [Unita Tecnologie Portici, Napoli (Italy). ENEA - Agenzia Nazionale per le Nuove Tecnologie, l' Energia e lo Sviluppo Economico Sostenibile; Korte, Lars [Helmholtz-Zentrum Berlin fuer Materialien und Energie (Germany). Inst. Silizium-Photovoltaik

    2012-07-01

    The challenge of developing photovoltaic (PV) technology to a cost-competitive alternative for established energy sources can be achieved using simple, high-throughput mass-production compatible processes. Issues to be addressed for large scale PV deployment in large power plants or in building integrated applications are enhancing the performance of solar energy systems by increasing solar cell efficiency, using low amounts of materials which are durable, stable, and abundant on earth, and reducing manufacturing and installation cost. Today's solar cell multi-GW market is dominated by crystalline silicon (c-Si) wafer technology, however new cell concepts are entering the market. One very promising solar cell design to answer these needs is the silicon hetero-junction solar cell, of which the emitter and back surface field are basically produced by a low temperature growth of ultra-thin layers of amorphous silicon. In this design, amorphous silicon (a-Si:H) constitutes both ''emitter'' and ''base-contact/back surface field'' on both sides of a thin crystalline silicon wafer-base (c-Si) where the photogenerated electrons and holes are generated; at the same time, a Si:H passivates the c-Si surface. Recently, cell efficiencies above 23% have been demonstrated for such solar cells. In this book, the editors present an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells. (orig.)

  7. Field Emission from Amorphous carbon Nitride Films Deposited on silicon Tip Arrays

    Institute of Scientific and Technical Information of China (English)

    李俊杰; 郑伟涛; 孙龙; 卞海蛟; 金曾孙; 赵海峰; 宋航; 孟松鹤; 赫晓东; 韩杰才

    2003-01-01

    Amorphous carbon nitride films (a-CNx) were deposited on silicon tip arrays by rf magnetron sputtering in pure nitrogen atmosphere. The field emission property of carbon nitride films on Si tips was compared with that of carbon nitride on silicon wafer. The results show that field emission property of carbon nitride films deposited on silicon tips can be improved significantly in contrast with that on wafer. It can be explained that field emission is sensitive to the local curvature and geometry, thus silicon tips can effectively promote field emission property of a-CNx films. In addition, the films deposited on silicon tips have a smaller effective work function ( F = 0.024 eV)of electron field emission than that on silicon wafer ( F = 0.060 e V), which indicates a significant enhancement of the ability of electron field emission from a-CNx films.

  8. Charging/discharging behavior and mechanism of silicon quantum dots embedded in amorphous silicon carbide films

    International Nuclear Information System (INIS)

    The charging/discharging behavior of Si quantum dots (QDs) embedded in amorphous silicon carbide (a-SiCx) was investigated based on the Al/insulating layer/Si QDs embedded in a-SiCx/SiO2/p-Si (metal-insulator-quantum dots-oxide-silicon) multilayer structure by capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. Transmission electron microscopy and Raman scattering spectroscopy measurements reveal the microstructure and distribution of Si QDs. The occurrence and shift of conductance peaks indicate the carrier transfer and the charging/discharging behavior of Si QDs. The multilayer structure shows a large memory window of 5.2 eV at ±8 V sweeping voltage. Analysis of the C-V and G-V results allows a quantification of the Coulomb charging energy and the trapped charge density associated with the charging/discharging behavior. It is found that the memory window is related to the size effect, and Si QDs with large size or low Coulomb charging energy can trap two or more electrons by changing the charging voltage. Meanwhile, the estimated lower potential barrier height between Si QD and a-SiCx, and the lower Coulomb charging energy of Si QDs could enhance the charging and discharging effect of Si QDs and lead to an enlarged memory window. Further studies of the charging/discharging mechanism of Si QDs embedded in a-SiCx can promote the application of Si QDs in low-power consumption semiconductor memory devices

  9. A comparison of degradation in three amorphous silicon PV module technologies

    Energy Technology Data Exchange (ETDEWEB)

    Radue, C.; van Dyk, E.E. [Physics Department, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2010-03-15

    Three commercial amorphous silicon modules manufactured by monolithic integration and consisting of three technology types were analysed in this study. These modules were deployed outdoors for 14 months and underwent degradation. All three modules experienced the typical light-induced degradation (LID) described by the Staebler-Wronski effect, and this was followed by further degradation. A 14 W single junction amorphous silicon module degraded by about 45% of the initial measured maximum power output (P{sub MAX}) at the end of the study. A maximum of 30% of this has been attributed to LID and the further 15% to cell mismatch and cell degradation. The other two modules, a 64 W triple junction amorphous silicon module, and a 68 W flexible triple junction amorphous silicon module, exhibited LID followed by seasonal variation in the degraded P{sub MAX}. The 64 W module showed a maximum degradation in P{sub MAX} of about 22%. This is approximately 4% more than the manufacturer allowed for the initial LID. However, the seasonal variation in P{sub MAX} seems to be centred around the manufacturer's rating ({+-}4%). The 68 W flexible module has shown a maximum decrease in P{sub MAX} of about 27%. This decrease is about 17% greater than the manufacturer allowed for the initial LID. (author)

  10. Nonlinear properties of and nonlinear processing in hydrogenated amorphous silicon waveguides

    DEFF Research Database (Denmark)

    Kuyken, B.; Ji, Hua; Clemmen, S.;

    2011-01-01

    We propose hydrogenated amorphous silicon nanowires as a platform for nonlinear optics in the telecommunication wavelength range. Extraction of the nonlinear parameter of these photonic nanowires reveals a figure of merit larger than 2. It is observed that the nonlinear optical properties of these...

  11. Light Entrapping, Modeling & Effect of Passivation on Amorphous Silicon Based PV Cell

    Directory of Open Access Journals (Sweden)

    Md. Mostafizur Rahman

    2016-07-01

    Full Text Available This research paper present efforts to enhance the performance of amorphous silicon p-i-n type solar cell using sidewall passivation. For sidewall passivation, MEMS insulation material Al2O3 was used. The main objective of this paper is to observe the effect of sidewall passivation in amorphous silicon solar cell and increase the conversion efficiency of the solar cell. Passivation of Al2O3 is found effective to subdue reverse leakage. It increases the electric potential generated in the designed solar cell. It also increases the current density generated in the solar cell by suppressing the leakage. Enhancement in J-V curve was observed after adding sidewall passivation. The short circuit current density (Jsc increased from 14.7 mA/cm2 to 18.5 mA/cm2, open circuit voltage (Voc improved from 0.87 V to 0.89 V, and the fill factor also slightly increased. Due to the sidewall of passivation of Al2O3, conversion efficiency of amorphous silicon solar cell increased by 29.07%. At the end, this research was a success to improve the efficiency of the amorphous silicon solar cell by adding sidewall passivation.

  12. Thermal ideality factor of hydrogenated amorphous silicon p-i-n solar cells

    NARCIS (Netherlands)

    Kind, R.; Van Swaaij, R.A.C.M.M.; Rubinelli, F.A.; Solntsev, S.; Zeman, M.

    2011-01-01

    The performance of hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells is limited, as they contain a relatively high concentration of defects. The dark current voltage (JV) characteristics at low forward voltages of these devices are dominated by recombination processes. The recombination rate

  13. Results from multipoint alignment monitoring using the new generation of amorphous silicon position detectors

    Energy Technology Data Exchange (ETDEWEB)

    Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E. [CIEMAT, 28040 Madrid (Spain); Ferrando, A. [CIEMAT, 28040 Madrid (Spain)], E-mail: antonio.ferrando@ciemat.es; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C. [CIEMAT, 28040 Madrid (Spain); Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L. [Instituto de Fisica de Cantabria (IFCA), CSIC-University of Cantabria Santander (Spain)] (and others)

    2008-08-11

    We present the measured performance of a new generation of large sensitive area (28x28 mm{sup 2}) semitransparent amorphous silicon position detector sensors. More than 100 units have been characterized. They show a very high performance. To illustrate a multipoint application, we present results from the monitoring of five sensors placed in a 5.5-m-long light path.

  14. Multipoint alignment monitoring with amorphous silicon position detectors in a complex light path

    Energy Technology Data Exchange (ETDEWEB)

    Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A., E-mail: antonio.ferrando@ciemat.e [CIEMAT, Madrid (Spain); Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C. [CIEMAT, Madrid (Spain); Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain)

    2010-12-01

    This document presents an application of the new generation of amorphous silicon position detecting (ASPD) sensors to multipoint alignment. Twelve units are monitored along a 20 m long laser beam, where the light path is deflected by 90{sup o} using a pentaprism.

  15. Amorphous Silicon Position Detectors for the Link Alignment System of the CMS Detector: Users Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F. J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Scodellaro, L.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

    2007-07-01

    We present the general characteristics, calibration procedures and measured performance of the Amorphous Silicon Position Detectors installed in the Link Alignment System of the CMS Detector for laser beam detection and reconstruction and give the Data Base to be used as a Handbook during CMS operation. (Author) 10 refs.

  16. Construction process and read-out electronics of amorphous silicon position detectors for multipoint alignment monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Koehler, C.; Schubert, M.B.; Lutz, B.; Werner, J.H. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A. [CIEMAT, Madrid (Spain)], E-mail: antonio.ferrando@ciemat.es; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C. [CIEMAT, Madrid (Spain); Calderon, A.; Fernandez, M.G.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F. [Instituto de Fisica de Cantabria IFCA/CSIC-University of Cantabria, Santander (Spain)] (and others)

    2009-09-01

    We describe the construction process of large-area high-performance transparent amorphous silicon position detecting sensors. Details about the characteristics of the associated local electronic board (LEB), specially designed for these sensors, are given. In addition we report on the performance of a multipoint alignment monitoring application of 12 sensors in a 13 m long light path.

  17. Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes

    Science.gov (United States)

    Sharp, Kenneth G.; D'Errico, John J.

    1988-01-01

    The invention relates to a method of forming amorphous, photoconductive, and semiconductive silicon films on a substrate by the vapor phase thermal decomposition of a fluorohydridodisilane or a mixture of fluorohydridodisilanes. The invention is useful for the protection of surfaces including electronic devices.

  18. Amorphous silicon research. Annual subcontract report, October 1, 1994--September 30, 1995

    Energy Technology Data Exchange (ETDEWEB)

    Arya, R R; Bennett, M; Bradley, D [and others

    1996-02-01

    The major effort in this program is to develop cost-effective processes which satisfy efficiency, yield, and material usage criteria for mass production of amorphous silicon-based multijunction modules. New and improved processes were developed for the component cells and a more robust rear contact was developed for better long term stability.

  19. Preparation and Characterisation of Amorphous-silicon Photovoltaic Devices Having Microcrystalline Emitters

    International Nuclear Information System (INIS)

    The present work summarises the essential aspects of the research carried out so far at CIEMAT on amorphous-silicon solar cells. The experience accumulated on the preparation and characterisation of amorphous and microcrystalline silicon has allowed to start from intrinsic (absorbent) and p- and n-type (emitters) materials not only having excellent optoelectronic properties, but enjoying certain technological advantages with respect to those developed by other groups. Among these are absorbent-layer growth rates between 5 and 10 times as fast as conventional ones and microcrystalline emitters prepared without using hydrogen. The preparation of amorphous-silicon cells has required the solution of a number of problems, such as those related to pinholes, edge leak currents and diffusion of metals into the semiconductor. Once such constraints have been overcome, it has been demonstrated not only that the amorphous-silicon technology developed at CIEMAT is valid for making solar cells, but also that the quality of the semiconductor material is good for the application according to the partial results obtained. The development of thin-film laser-scribing technology is considered essential. Additionally it has been concluded that cross contamination, originated by the fact of using a single-chamber reactor, is the basic factor limiting the quality of the cells developed at CIEMAT. The present research activity is highly focused on the solution of this problem. (Author)23 refs

  20. Amorphous silicon solar cells on natively textured ZnO grown by PECVD

    NARCIS (Netherlands)

    Löffler, J.; Groenen, R.; Linden, J.L.; Sanden, M.C.M. van de; Schropp, R.E.I.

    2001-01-01

    Natively textured ZnO layers deposited by the expanding thermal plasma CVD technique between 150 and 350°C at a deposition rate between 0.65 and 0.75 nm/s have been investigated with respect to their suitability as front electrode material for amorphous silicon pin solar cells in comparison to refer

  1. View-dependent geometric calibration for offset flat-panel cone beam computed tomography systems

    Science.gov (United States)

    Nguyen, Van-Giang

    2016-04-01

    Geometric parameters that define the geometry of imaging systems are crucial for image reconstruction and image quality in x-ray computed tomography (CT). The problem of determining geometric parameters for an offset flat-panel cone beam CT (CBCT) system, a recently introduced modality with a large field of view, with the assumption of an unstable mechanism and geometric parameters that vary in each view, is considered. To accurately and rapidly find the geometric parameters for each projection view, we use the projection matrix method and design a dedicated phantom that is partially visible in all projection views. The phantom consists of balls distributed symmetrically in a cylinder to ensure the inclusion of the phantom in all views, and a large portion of the phantom is covered in the projection image. To efficiently use calibrated geometric information in the reconstruction process and get rid of approximation errors, instead of decomposing the projection matrix into actual geometric parameters that are manually corrected before being used in reconstruction, as in conventional methods, we directly use the projection matrix and its pseudo-inverse in projection and backprojection operations of reconstruction algorithms. The experiments illustrate the efficacy of the proposed method with a real offset flat-panel CBCT system in dental imaging.

  2. Transmission type flat-panel X-ray source using ZnO nanowire field emitters

    International Nuclear Information System (INIS)

    A transmission type flat-panel X-ray source in diode structure was fabricated. Large-scale patterned ZnO nanowires grown on a glass substrate by thermal oxidation were utilized as field emitters, and tungsten thin film coated on silica glass was used as the transmission anode. Uniform distribution of X-ray generation was achieved, which benefited from the uniform electron emission from ZnO nanowires. Self-ballasting effect induced by the intrinsic resistance of ZnO nanowire and decreasing of screening effect caused by patterned emitters account for the uniform emission. Characteristic X-ray peaks of W-L lines and bremsstrahlung X-rays have been observed under anode voltages at a range of 18–20 kV, the latter of which were the dominant X-ray signals. High-resolution X-ray images with spatial resolution less than 25 μm were obtained by the flat-panel X-ray source. The high resolution was attributed to the small divergence angle of the emitted X-rays from the transmission X-ray source

  3. Dose rate and beam profile measurement of proton beam using a flat panel detector

    Science.gov (United States)

    Park, Jeong-Min

    2015-10-01

    A 20-MeV or 100-MeV proton beam is provided to users for their proton beam irradiation experiments at KOrea Multi-Purpose Accelerator Complex. Radiochromic film (Gafchromic / HDV2) has been used to measure the dose rate and the profile of an incident proton beam during irradiation experiments. However, such measurements using radiochromic film have some inconveniences because an additional scanning process of is required to quantify the film's image. Therefore, we tried to measure the dose rate and beam profile by using a flat panel detector (FPD), which was developed for X-ray radiography as a substitute for radiochromic film because the FPD can measure the beam profile and the dose rate directly through a digitized image with a high spatial resolution. In this work, we investigated the feasibility of using a FPD as a substitute for radiochromic film. The preliminary results for the beam profile and the dose rate measured by using the flat panel detector are reported in the paper.

  4. An iterative algorithm for soft tissue reconstruction from truncated flat panel projections

    Science.gov (United States)

    Langan, D.; Claus, B.; Edic, P.; Vaillant, R.; De Man, B.; Basu, S.; Iatrou, M.

    2006-03-01

    The capabilities of flat panel interventional x-ray systems continue to expand, enabling a broader array of medical applications to be performed in a minimally invasive manner. Although CT is providing pre-operative 3D information, there is a need for 3D imaging of low contrast soft tissue during interventions in a number of areas including neurology, cardiac electro-physiology, and oncology. Unlike CT systems, interventional angiographic x-ray systems provide real-time large field of view 2D imaging, patient access, and flexible gantry positioning enabling interventional procedures. However, relative to CT, these C-arm flat panel systems have additional technical challenges in 3D soft tissue imaging including slower rotation speed, gantry vibration, reduced lateral patient field of view (FOV), and increased scatter. The reduced patient FOV often results in significant data truncation. Reconstruction of truncated (incomplete) data is known an "interior problem", and it is mathematically impossible to obtain an exact reconstruction. Nevertheless, it is an important problem in 3D imaging on a C-arm to address the need to generate a 3D reconstruction representative of the object being imaged with minimal artifacts. In this work we investigate the application of an iterative Maximum Likelihood Transmission (MLTR) algorithm to truncated data. We also consider truncated data with limited views for cardiac imaging where the views are gated by the electrocardiogram(ECG) to combat motion artifacts.

  5. Perfusion analysis using a wide coverage flat-panel volume CT: feasibility study

    Science.gov (United States)

    Grasruck, M.; Gupta, R.; Reichardt, B.; Klotz, E.; Schmidt, B.; Flohr, T.

    2007-03-01

    We developed a Flat-panel detector based Volume CT (VCT) prototype scanner with large z-coverage. In that prototype scanner a Varian 4030CB a-Si flat-panel detector was mounted in a multi slice CT-gantry (Siemens Medical Solutions) which provides a 25 cm field of view with 18 cm z-coverage at isocenter. The large volume covered in one rotation can be used for visualization of complete organs of small animals, e.g. rabbits. By implementing a mode with continuous scanning, we are able to reconstruct the complete volume at any point in time during the propagation of a contrast bolus. Multiple volumetric reconstructions over time elucidate the first pass dynamics of a bolus of contrast resulting in 4-D angiography and potentially allowing whole organ perfusion analysis. We studied to which extent pixel based permeability and blood volume calculation with a modified Patlak approach was possible. Experimental validation was performed by imaging evolution of contrast bolus in New Zealand rabbits. Despite the short circulation time of a rabbit, the temporal resolution was sufficient to visually resolve various phases of the first pass of the contrast bolus. Perfusion imaging required substantial spatial smoothing but allowed a qualitative discrimination of different types of parenchyma in brain and liver. If a true quantitative analysis is possible, requires further studies.

  6. Physical properties of a new flat panel detector with cesium-iodide technology

    Science.gov (United States)

    Hahn, Andreas; Penchev, Petar; Fiebich, Martin

    2016-03-01

    Flat panel detectors have become the standard technology in projection radiography. Further progress in detector technology will result in an improvement of MTF and DQE. The new detector (DX-D45C; Agfa; Mortsel/Belgium) is based on cesium-iodine crystals and has a change in the detector material and the readout electronics. The detector has a size of 30 cm x 24 cm and a pixel matrix of 2560 x 2048 with a pixel pitch of 124 μm. The system includes an automatic exposure detector, which enables the use of the detector without a connection to the x-ray generator. The physical properties of the detector were determined following IEC 62220-1-1 in a laboratory setting. The MTF showed an improvement compared to the previous version of cesium-iodine based flat-panel detectors. Thereby the DQE is also improved especially for the higher frequencies. The new detector showed an improvement in the physical properties compared to the previous versions. This enables a potential for further dose reductions in clinical imaging.

  7. Transmission type flat-panel X-ray source using ZnO nanowire field emitters

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Daokun; Song, Xiaomeng; Zhang, Zhipeng; Chen, Jun, E-mail: stscjun@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510275 (China); School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Li, Ziping [The First Affiliated Hospital, Sun Yat-sen University, Guangzhou 510275 (China); She, Juncong; Deng, Shaozhi; Xu, Ningsheng [State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510275 (China); School of Microelectronics, Sun Yat-sen University, Guangzhou 510275 (China)

    2015-12-14

    A transmission type flat-panel X-ray source in diode structure was fabricated. Large-scale patterned ZnO nanowires grown on a glass substrate by thermal oxidation were utilized as field emitters, and tungsten thin film coated on silica glass was used as the transmission anode. Uniform distribution of X-ray generation was achieved, which benefited from the uniform electron emission from ZnO nanowires. Self-ballasting effect induced by the intrinsic resistance of ZnO nanowire and decreasing of screening effect caused by patterned emitters account for the uniform emission. Characteristic X-ray peaks of W-L lines and bremsstrahlung X-rays have been observed under anode voltages at a range of 18–20 kV, the latter of which were the dominant X-ray signals. High-resolution X-ray images with spatial resolution less than 25 μm were obtained by the flat-panel X-ray source. The high resolution was attributed to the small divergence angle of the emitted X-rays from the transmission X-ray source.

  8. Evaluation of stent visibility by flat panel detector CT in patients treated for intracranial aneurysms

    Energy Technology Data Exchange (ETDEWEB)

    Clarencon, Frederic [Groupe Hospitalier Pitie-Salpetriere, Paris (France); Pitie-Salpetriere Hospital, Department of Neuroradiology, Paris (France); Piotin, Michel; Pistocchi, Silvia; Blanc, Raphael [Fondation A. de Rothschild, Paris (France); Babic, Drazenko [Philips Healthcare, Best (Netherlands)

    2012-10-15

    This study aimed to evaluate the visibility of stents using high-resolution computed tomography (CT) acquisitions acquired with flat panel detector (XperCT, Allura series, Philips Healthcare, The Netherlands) for endovascular treatment of intracranial aneurysms. On a 24-month period, 48 patients endovascularly treated by coiling and stenting (59 stents) for intracranial aneurysms were explored by flat panel detector CT technique. A sequence of 620 2D images was acquired over an angle of 240 using a 1,024 x 1,024 pixel matrix detector within a 48-cm field of view. The images were retrospectively analyzed independently by two neuroradiologists. Evaluation criteria were percentage of visualization of the stents and stent deployment (kinking or unsatisfactory deployment of the stent). Evaluation of the stent was feasible for all the patients. Stent visibility by XperCT was overall estimated at 76% of the stent length. Difficulties to analyze the stents were related to coil artifacts but not to packing density or aneurysm location. Stent length visualization was higher when the acquisition was performed before additional coiling (P < 0.0001). Mild kinking/misdeployment was noticed in 22% of the cases. XperCT technique provides multiplanar and 3D reconstructions that allows for a satisfying visualization of intracranial stents. This CT-like acquisition should be performed after the stent deployment and before coiling, in order to obtain better stent visualization. (orig.)

  9. A preliminary investigation into hybrid photovoltaic cells with organic phthalocyanines and amorphous silicon heterojunction

    International Nuclear Information System (INIS)

    Hybrid photovoltaic cells take the advantages of silicon in charge carrier separation and transport and organic dyes in strong complementary light absorption. Photovoltaic responses from a set of hybrid solar cells based on amorphous silicon and phthalocyanine dyes of double- or triple-layer heterojunction structures were investigated, which were found to have thickness dependence with the organic active layers. It was found that the photocurrent contributions from organic layers are limited, although they are strong light absorbers. The main photocurrent contributions are from the silicon counterpart. (paper)

  10. CW laser induced crystallization of thin amorphous silicon films deposited by EBE and PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Said-Bacar, Z., E-mail: zabardjade@yahoo.fr [InESS (UMR 7163 CNRS-UDS), 23 rue de Loess, 67037 Strasbourg Cedex 2 (France); Prathap, P. [InESS (UMR 7163 CNRS-UDS), 23 rue de Loess, 67037 Strasbourg Cedex 2 (France); Cayron, C. [CEA, LITEN, DEHT, Minatec, 17 rue des Martyrs, 38054 Cedex 9 (France); Mermet, F. [IREPA LASER, Pole API - Parc d' Innovation, 67400 Illkirch (France); Leroy, Y.; Antoni, F.; Slaoui, A.; Fogarassy, E. [InESS (UMR 7163 CNRS-UDS), 23 rue de Loess, 67037 Strasbourg Cedex 2 (France)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer The effect of hydrogen in CW laser crystallization of hydrogenated amorphous silicon thin films has been investigated. Black-Right-Pointing-Pointer Large hydrogen content results in decohesion of the films due to hydrogen effusion. Black-Right-Pointing-Pointer Very low hydrogen content or hydrogen free amorphous silicon film are suitable for crystallization induced by CW laser. Black-Right-Pointing-Pointer Grains of size between 20 and 100 {mu}m in width and about 200 {mu}m in long in scanning direction are obtained with these latter films. - Abstract: This work presents the Continuous Wave (CW) laser crystallization of thin amorphous silicon (a-Si) films deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) and by Electron Beam Evaporation (EBE) on low cost glass substrate. The films are characterized by Elastic Recoil Detection Analysis (ERDA) and by Fourier-Transform Infrared (FTIR) spectroscopy to evaluate the hydrogen content. Analysis shows that the PECVD films contain a high hydrogen concentration ({approx}10 at.%) while the EBE films are almost hydrogen-free. It is found that the hydrogen is in a bonding configuration with the a-Si network and in a free form, requiring a long thermal annealing for exodiffusion before the laser treatment to avoid explosive effusion. The CW laser crystallization process of the amorphous silicon films was operated in liquid phase regime. We show by Electron Backscatter Diffraction (EBSD) that polysilicon films with large grains can be obtained with EBE as well as for the PECVD amorphous silicon provided that for the latest the hydrogen content is lower than 2 at.%.

  11. Crystalline-Amorphous Core−Shell Silicon Nanowires for High Capacity and High Current Battery Electrodes

    KAUST Repository

    Cui, Li-Feng

    2009-01-14

    Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon\\'s large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline- amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li ions. We demonstrate here that these core-shell nanowires have high charge storage capacity (̃1000 mAh/g, 3 times of carbon) with ̃90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, ̃20 times of carbon at 1 h rate). © 2009 American Chemical Society.

  12. Molecular dynamics studies of the bonding properties of amorphous silicon nitride coatings on crystalline silicon

    OpenAIRE

    Butler, K.T.; Lamers, M.P.W.E.; Weeber, A. W.; Harding, J. H.

    2011-01-01

    In this paper we present molecular dynamics simulations of silicon nitride, both in bulk and as an interface to crystalline silicon. We investigate, in particular, the bonding structure of the silicon nitride and analyze the simulations to search for de- fective geometries which have been identified as potential charge carrier traps when silicon nitride forms an interface with silicon semiconductors. The simulations reveal how the bonding patterns in silicon nitride are dependent upon the sto...

  13. Amorphous silicon materials and solar cells - Progress and directions

    Science.gov (United States)

    Sabisky, E.; Mahan, H.; McMahon, T.

    In 1978, the U.S. Department of Energy initiated government sponsored research in amorphous materials and thin film solar cells. The program was subsequently transferred to the Solar Energy Research Institute for program management. The program grew into a major program for the development of high efficiency (greater than 10 percent), cost effective (15-40 cents per peak watt) thin film amorphous solar cells. The present international interest, the substantial progress made in the device area (2 percent PIN cell in 1976 to 10 percent PIN cell in 1982), and the marketing of the first consumer products using thin film solar cells are to a large ducts using thin film solar cells are to a large extent a consequence of this goal-oriented program.

  14. A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.

    Science.gov (United States)

    Ha, Tae-Jun; Cho, Won-Ju; Chung, Hong-Bay; Koo, Sang-Mo

    2015-09-01

    We investigate photo-induced instability in thin-film transistors (TFTs) consisting of amorphous indium-gallium-zinc-oxide (a-IGZO) as active semiconducting layers by comparing with hydrogenated amorphous silicon (a-Si:H). An a-IGZO TFT exhibits a large hysteresis window in the illuminated measuring condition but no hysteresis window in the dark condition. On the contrary, a large hysteresis window measured in the dark condition in a-Si:H was not observed in the illuminated condition. Even though such materials possess the structure of amorphous phase, optical responses or photo instability in TFTs looks different from each other. Photo-induced hysteresis results from initially trapped charges at the interface between semiconductor and dielectric films or in the gate dielectric which possess absorption energy to interact with deep trap-states and affect the movement of Fermi energy level. In order to support our claim, we also perform CV characteristics in photo-induced hysteresis and demonstrate thermal-activated hysteresis. We believe that this work can provide important information to understand different material systems for optical engineering which includes charge transport and band transition.

  15. A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.

    Science.gov (United States)

    Ha, Tae-Jun; Cho, Won-Ju; Chung, Hong-Bay; Koo, Sang-Mo

    2015-09-01

    We investigate photo-induced instability in thin-film transistors (TFTs) consisting of amorphous indium-gallium-zinc-oxide (a-IGZO) as active semiconducting layers by comparing with hydrogenated amorphous silicon (a-Si:H). An a-IGZO TFT exhibits a large hysteresis window in the illuminated measuring condition but no hysteresis window in the dark condition. On the contrary, a large hysteresis window measured in the dark condition in a-Si:H was not observed in the illuminated condition. Even though such materials possess the structure of amorphous phase, optical responses or photo instability in TFTs looks different from each other. Photo-induced hysteresis results from initially trapped charges at the interface between semiconductor and dielectric films or in the gate dielectric which possess absorption energy to interact with deep trap-states and affect the movement of Fermi energy level. In order to support our claim, we also perform CV characteristics in photo-induced hysteresis and demonstrate thermal-activated hysteresis. We believe that this work can provide important information to understand different material systems for optical engineering which includes charge transport and band transition. PMID:26716230

  16. Reactive Infiltration of Silicon Melt Through Microporous Amorphous Carbon Preforms

    Science.gov (United States)

    Sangsuwan, P.; Tewari, S. N.; Gatica, J. E.; Singh, M.; Dickerson, R.

    1999-01-01

    The kinetics of unidirectional capillary infiltration of silicon melt into microporous carbon preforms have been investigated as a function of the pore morphology and melt temperature. The infiltrated specimens showed alternating bands of dark and bright regions, which corresponded to the unreacted free carbon and free silicon regions, respectively. The decrease in the infiltration front velocity for increasing infiltration distances, is in qualitative agreement with the closed-form solution of capillarity driven fluid flow through constant cross section cylindrical pores. However, drastic changes in the thermal response and infiltration front morphologies were observed for minute differences in the preforms microstructure. This suggests the need for a dynamic percolation model that would account for the exothermic nature of the silicon-carbon chemical reaction and the associated pore closing phenomenon.

  17. An amorphous phase formation at palladium / silicon oxide (Pd/SiOx) interface through electron irradiation - electronic excitation process

    International Nuclear Information System (INIS)

    A Pd-Si amorphous phase was formed at a palladium/silicon oxide (Pd/SiOx) interface at room temperature by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Solid-state amorphization was stimulated without the electron knock-on effects. The total dose required for the solid-state amorphization decreases with decreasing acceleration voltage. This is the first report on electron irradiation induced metallic amorphous formation caused by the electronic excitation at metal/silicon oxide interface

  18. Microstructural tuning of polycrystalline silicon films from hydrogen diluted amorphous silicon films by AIC

    Energy Technology Data Exchange (ETDEWEB)

    Prathap, P.; Tuzun, O.; Roques, S.; Schmitt, S.; Slaoui, A. [InESS, CNRS-UdS, Strasbourg Cedex-2 (France); Maurice, C. [SMS Centre, UMR CNRS 5146, Ecole des Mines de Saint Etienne, 158 Cours Fauriel, 42023 Saint Etienne Cedex 2 (France)

    2011-03-15

    In the present study, the effect of hydrogen dilution in amorphous silicon on its crystallization kinetics and defect distribution using AIC has been studied. The a -Si films were deposited at different ratios of H{sub 2}/(H{sub 2}+SiH{sub 4}) using plasma enhanced chemical vapour deposition (ECR-PECVD) on glass-ceramic substrates. The thicknesses of aluminium and a -Si:H films were 0.20 {mu}m and 0. 37 {mu}m, respectively. The bi-layer structures were annealed in a tube furnace at 475 C for 8 hours in a nitrogen atmosphere. The results indicated that as the hydrogen dilution for a -Si:H films increased from 0% to 85%, the AIC grown poly-Si films were more stressed compressively, while the Raman peak broadened from 6.7 cm{sup -1} to 8.6 cm{sup -1}. It was found that the initiation of crystallization temperature as well as microstructure of poly-Si films was dramatically influenced by the hydrogen content in precursor a -Si films. The distribution of microstructural defects analysed by Electron Back Scattering Diffraction (EBSD) method indicated that frequency of low angle grain boundaries (LAGB) were more at higher hydrogen dilution ratios while coincident site lattice boundaries (CSL) of first order ({sigma}3), second order ({sigma}9) and third order ({sigma}27) were less sensitive to the hydrogen dilutions/content (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. AuPd CATALYTIC NANOPARTICLE SIZE EFFECT ON THE FORMATION OF AMORPHOUS SILICON NANOWIRES

    Institute of Scientific and Technical Information of China (English)

    LIU ZU-QIN; SUN LIAN-FENG; TANG DONG-SHENG; ZHOU WEI-YA; LI YU-BAO; Zou XIAO-PING

    2000-01-01

    Amorphous silicon (a-Si) nanowires have been prepared on SiO2/Si substrates by AuPd nanoparticles / silane reaction method. Field-emission scanning electron microscopy and transmission electron microscopy were used to characterize the samples. The typical a-Si nanowires we obtained are of a uniform diameter about 20 nm and length up to several micrometers. The growth mechanism of the nanowires seems to be the vapor-liquid-solid mechanism. The catalytic particle size effect on the formation of the nanowires and the cause of forming amorphous state Si nanowires are discussed.

  20. Investigation of Vertical Drag and Periodic Airloads Acting on Flat Panels in a Rotor Slipstream

    Science.gov (United States)

    Makofski, Robert A; Menkick, George F

    1956-01-01

    Tests have been conducted on the Langley helicopter test tower to determine the vertical drag and pressure distributions on flat panels mounted below a helicopter rotor. Calculations of the vertical drag by use of a strip-analysis procedure outlined in the paper and the assumption of a fully contracted wake agreed well with the experimental results over the range from 0.2 to 0.64 rotor radius beneath the plane of zero flapping. The pressure increase caused by the passage of the blade over the panel is a maximum at about the 0.8 radius spanwise station. At this station, the pressure decreases from 10 times the disk loading per blade at 0.05 radius beneath the rotor plane of zero flapping to one-half of the disk loading per blade at 0.64 radius beneath the plane of zero flapping.

  1. A typical flat-panel membrane bioreactor with a composite membrane for sulfur removal

    Science.gov (United States)

    Guan, Jian; Xiao, Yuan; Song, Jimin; Miao, Junhe

    2014-03-01

    The aim of this work was to provide a concrete study to understand the effects of operation on biofilm morphology and microstructure and degradation efficiency for the disposal of sulfur dioxide produced by coal-fired power plants. For this purpose, a flat-panel reactor-membrane bioreactor (MBR) with a composite membrane consisting of a dense layer and a support layer was designed; the membrane bioreactors inoculated with Thiobacillus ferrooxidans were further conducted for the removal of sulfur dioxide. Dry weight, active biomass, pressure drop, removal efficiency, morphology and structure of the formed biofilms were investigated and analyzed over period of biofilm formation. The results found that the dry weight, biomass, pressure drops and removal efficiency increased rapidly during biofilm formation, remained relatively stable in the stabilization period of biofilm growth, and finally reached 0.085 g, 7.00 μg, 180 Pa, and 78%, respectively. Our results suggested the MBR is available for flue-gas desulfurization.

  2. Development of next generation digital flat panel catheterization system: design principles and validation methodology

    Science.gov (United States)

    Belanger, B.; Betraoui, F.; Dhawale, P.; Gopinath, P.; Tegzes, Pal; Vagvolgyi, B.

    2006-03-01

    The design principles that drove the development of a new cardiovascular x-ray digital flat panel (DFP) detector system are presented, followed by assessments of imaging and dose performance achieved relative to other state of the art FPD systems. The new system (GE Innova 2100 IQ TM) incorporates a new detector with substantially improved DQE at fluoroscopic (73%@1μR) and record (79%@114uR) doses, an x-ray tube with higher continuous fluoro power (3.2kW), a collimator with a wide range of copper spectral filtration (up to 0.9mm), and an improved automatic x-ray exposure management system. The performance of this new system was compared to that of the previous generation GE product (Innova 2000) and to state-of-the art cardiac digital x-ray flat panel systems from two other major manufacturers. Performance was assessed with the industry standard Cardiac X-ray NEMA/SCA and I phantom, and a new moving coronary artery stent (MCAS) phantom, designed to simulate cardiac clinical imaging conditions, composed of an anthropomorphic chest section with stents moving in a manner simulating normal coronary arteries. The NEMA/SCA&I phantom results showed the Innova 2100 IQ to exceed or equal the Innova 2000 in all of the performance categories, while operating at 28% lower dose on average, and to exceed the other DFP systems in most of the performance categories. The MCAS phantom tests showed the Innova 2100 IQ to be significantly better (p << 0.05) than the Innova 2000, and significantly better than the other DFP systems in most cases at comparable or lower doses, thereby verifying excellent performance against design goals.

  3. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    International Nuclear Information System (INIS)

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm2 aperture area on the graphite substrate. The optical properties of the SiNx/a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiNx/a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiNx/a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance

  4. Enhanced Multiple Exciton Generation in Amorphous Silicon Nanoparticles

    OpenAIRE

    Kryjevski, Andrei; Kilin, Dmitri

    2014-01-01

    Multiple exciton generation (MEG) in nanometer-sized hydrogen-passivated silicon nanowires (NWs), and quasi two-dimensional nanofilms strongly depends on the degree of the core structural disorder as shown by the many-body perturbation theory (MBPT) calculations based on the density functional theory (DFT) simulations. Working to the second order in the electron-photon coupling and in the screened Coulomb interaction we calculate quantum efficiency (QE), the average number of excitons created...

  5. Band offsets between amorphous La2Hf2O7 and silicon

    Institute of Scientific and Technical Information of China (English)

    CHENG Xuerui; WANG Yongqiang; QI Zeming; ZHANG Guobin; WANG Yuyin; SHAO Tao; ZHANG Wenhua

    2012-01-01

    Amorphous La2Hf2O7 films were grown on Si(100) by pulsed laser deposition method.The valence and conduction band offsets between amorphous La2Hf2O7 film and silicon were determined by using synchrotron radiation photoemission spectroscopy.The energy band gap of amorphous La2Hf2O7 film was measured from the energy-loss spectra of O 1s photoelectrons.The band gap of amorphous La2Hf2O7 film was determined to be 5.4±0.2 eV.The valence and the conduction-band offsets of amorphous La2Hf2O7 film to Si were obtained to be 2.7±0.2 and 1.6±0.2 eV,respectively.These results indicated that the amorphous La2Hf2O7 film could be one promising candidate for high-k gate dielectrics.

  6. In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy

    CERN Document Server

    Kessels, W M M; Sanden, M C M; Aydil, E S

    2002-01-01

    An in situ method based on attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) is presented for detecting surface silicon hydrides on plasma deposited hydrogenated amorphous silicon (a-Si:H) films and for determining their surface concentrations. Surface silicon hydrides are desorbed by exposing the a-Si:H films to low energy ions from a low density Ar plasma and by comparing the infrared spectrum before and after this low energy ion bombardment, the absorptions by surface hydrides can sensitively be separated from absorptions by bulk hydrides incorporated into the film. An experimental comparison with other methods that utilize isotope exchange of the surface hydrogen with deuterium showed good agreement and the advantages and disadvantages of the different methods are discussed. Furthermore, the determination of the composition of the surface hydrogen bondings on the basis of the literature data on hydrogenated crystalline silicon surfaces is presented, and quantification of the h...

  7. Plasma-initiated rehydrogenation of amorphous silicon to increase the temperature processing window of silicon heterojunction solar cells

    Science.gov (United States)

    Shi, Jianwei; Boccard, Mathieu; Holman, Zachary

    2016-07-01

    The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300 °C degrades its ability to passivate silicon wafer surfaces. This limits the temperature of post-passivation processing steps during the fabrication of advanced silicon heterojunction or silicon-based tandem solar cells. We demonstrate that a hydrogen plasma can rehydrogenate intrinsic a-Si:H passivation layers that have been dehydrogenated by annealing. The hydrogen plasma treatment fully restores the effective carrier lifetime to several milliseconds in textured crystalline silicon wafers coated with 8-nm-thick intrinsic a-Si:H layers after annealing at temperatures of up to 450 °C. Plasma-initiated rehydrogenation also translates to complete solar cells: A silicon heterojunction solar cell subjected to annealing at 450 °C (following intrinsic a-Si:H deposition) had an open-circuit voltage of less than 600 mV, but an identical cell that received hydrogen plasma treatment reached a voltage of over 710 mV and an efficiency of over 19%.

  8. Preparation and Surface Analysis of a Fluorinated Amorphous Silicon for Photo-voltaic Device Application

    Science.gov (United States)

    McWhinney, Hylton G.; Burton, Dawn; Fogarty, Thomas N.

    1998-01-01

    Amorphous silicon films (a-Si:H) have been routinely deposited on a variety of substrates. Surface and interfacial studies were carried out with a PHI 5600 X-ray photo electron spectrometer. Co-deposition with fluorine yielded films having oxygen present as bulk oxide. The higher the fluorine content, the greater the amount of bulk oxygen observed. The presence of oxygen may be a contributing factor to inconsistent film properties of fluorine doped silicon materials, reported else where. A definite chemical interface between a layer containing fluorine and a layer made from pure silane has been delineated.

  9. Picosecond all-optical switching in hydrogenated amorphous silicon microring resonators

    CERN Document Server

    Pelc, Jason S; Vo, Sonny; Santori, Charles; Fattal, David A; Beausoleil, Raymond G

    2014-01-01

    We utilize cross-phase modulation to observe all-optical switching in microring resonators fabricated with hydrogenated amorphous silicon (a-Si:H). Using 2.7-ps pulses from a mode-locked fiber laser in the telecom C-band, we observe optical switching of a cw telecom-band probe with full-width at half-maximum switching times of 14.8 ps, using approximately 720 fJ of energy deposited in the microring. In comparison with telecom-band optical switching in crystalline silicon microrings, a-Si:H exhibits substantially higher switching speeds due to reduced impact of free-carrier processes.

  10. Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning Laser

    Directory of Open Access Journals (Sweden)

    R. Černý

    2000-01-01

    Full Text Available An optimum design of experimental setup for the preparation of polycrystalline silicon (pc-Si films from amorphous layers applicable in the solar cell production is analyzed in the paper. In the computational simulations, the influence of basic characteristic parameters of the experimental procedure on the mechanisms of pc-Si lateral growth is studied. Among these parameters, the energy density of the applied laser and the thickness of the amorphous silicon (a-Si layer are identified as the most significant. As an optimum solution, the mechanism of pc-Si growth consisting in repeated melting of a part of already crystallized pc-Si layer by the scanning laser is proposed.

  11. Spectral selectivity constraints in fluorescence detection of biomolecules using amorphous silicon based detectors

    Energy Technology Data Exchange (ETDEWEB)

    Conde, J.P. [INESC Microsistemas e Nanotecnologias and IN- Institute of Nanoscience and Nanotechnology, Rua Alves Redol 9, 1000-029 Lisbon (Portugal); Department of Chemical and Biological Engineering, Instituto Superior Tecnico, Av. Rovisco Pais 1, 1000-049 Lisbon (Portugal); Joskowiak, A.; Pimentel, A.; Santos, M.; Chu, V. [INESC Microsistemas e Nanotecnologias and IN- Institute of Nanoscience and Nanotechnology, Rua Alves Redol 9, 1000-029 Lisbon (Portugal); Lipovsek, B.; Krc, J.; Topic, M. [Laboratory of Photovoltaics and Optoelectronics, Faculty of Electrical Engineering, University of Ljubljana, Trzaska 25, 1000 Ljubljana (Slovenia); Pereira, A.T. [INESC Microsistemas e Nanotecnologias and IN- Institute of Nanoscience and Nanotechnology, Rua Alves Redol 9, 1000-029 Lisbon (Portugal); IBB-Institute for Biotechnology and Bioengineering, Centre for Biological and Chemical Engineering, Instituto Superior Tecnico, Av. Rovisco Pais 1, 1000-049 Lisbon (Portugal); Prazeres, D.M.F. [Department of Chemical and Biological Engineering, Instituto Superior Tecnico, Av. Rovisco Pais 1, 1000-049 Lisbon (Portugal); IBB-Institute for Biotechnology and Bioengineering, Centre for Biological and Chemical Engineering, Instituto Superior Tecnico, Av. Rovisco Pais 1, 1000-049 Lisbon (Portugal)

    2010-04-15

    A microdevice based on a thin-film hydrogenated amorphous silicon (a -Si:H) p-i-n photodiode is used to quantify the density of DNA oligonucleotides labelled with a fluorophore and the density of E. coli cells expressing GFP (green fluorescent protein) by fluorescence. An absorption filter is integrated in the device which filters the excitation light and transmits the emitted light to the photodetector. This filter is an amorphous silicon carbon (a-SiC:H) alloy in which the bandgap can be selected according to the excitation and emission wavelengths of the fluorophores used by varying the carbon content of the film. Control of the thickness of the a-SiC:H film allows the modulation of the transmission ratio between the excitation wavelength and the emission wavelength. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Carbon nanotube-amorphous silicon hybrid solar cell with improved conversion efficiency

    Science.gov (United States)

    Funde, Adinath M.; Nasibulin, Albert G.; Gufran Syed, Hashmi; Anisimov, Anton S.; Tsapenko, Alexey; Lund, Peter; Santos, J. D.; Torres, I.; Gandía, J. J.; Cárabe, J.; Rozenberg, A. D.; Levitsky, Igor A.

    2016-05-01

    We report a hybrid solar cell based on single walled carbon nanotubes (SWNTs) interfaced with amorphous silicon (a-Si). The high quality carbon nanotube network was dry transferred onto intrinsic a-Si forming Schottky junction for metallic SWNT bundles and heterojunctions for semiconducting SWNT bundles. The nanotube chemical doping and a-Si surface treatment minimized the hysteresis effect in current-voltage characteristics allowing an increase in the conversion efficiency to 1.5% under an air mass 1.5 solar spectrum simulator. We demonstrated that the thin SWNT film is able to replace a simultaneously p-doped a-Si layer and transparent conductive electrode in conventional amorphous silicon thin film photovoltaics.

  13. Measurement of the quantum efficiency of CsI, amorphous silicon and organometallic reflective photocathodes

    Energy Technology Data Exchange (ETDEWEB)

    Malamud, G. (LPNHE, Ecole Polytechnique, IN2P3-CNRS, 91128 Palaiseau (France)); Mine, P. (LPNHE, Ecole Polytechnique, IN2P3-CNRS, 91128 Palaiseau (France)); Vartsky, D. (LPNHE, Ecole Polytechnique, IN2P3-CNRS, 91128 Palaiseau (France)); Equer, B. (PICM, Ecole Polytechnique, CNRS (UPR258), 91128 Palaiseau (France)); Besson, P. (CE Saclay, DAPNIA/SED, 91191 Gif-sur-Yvette Cedex (France)); Bourgeois, P. (CE Saclay, DAPNIA/SED, 91191 Gif-sur-Yvette Cedex (France)); Breskin, A. (LPNHE, Ecole Polytechnique, IN2P3-CNRS, 91128 Palaiseau (France)); Chechik, R. (The Weizmann Institute of Science, 76100 Rehovot (Israel))

    1994-09-01

    We performed a systematic investigation of the quantum efficiency of some solid reflective photocathodes in the spectral range 140-240 nm. The measurements were made without gaseous amplification in vacuum and in methane. No significant difference was found among CsI photocathodes prepared by vacuum deposition at different institutes, either from powders or from crystals of different origins, and measured either in vacuum or in methane. Amorphous silicon photocathodes were prepared by the plasma enhanced chemical vapor deposition technique. We present the results for several doping conditions of amorphous silicon and for p-n junctions. Some organometallic photocathodes, containing iron or other transition metals (cerium), were evaporated and measured. Among them decamethylferrocene exhibits the highest quantum efficiency in the range 190-240 nm. ((orig.))

  14. A fast method to diagnose phase transition from amorphous to microcrystalline silicon

    Institute of Scientific and Technical Information of China (English)

    HOU; GuoFu

    2007-01-01

    A series of hydrogenated silicon thin films were prepared by the radio frequency plasma enhanced chemical vapor deposition method (RF-PECVD) with various silane concentrations. The influence of silane concentration on structural and electrical characteristics of these films was investigated to study the phase transition region from amorphous to microcrystalline phase. At the same time, optical emission spectra (OES) from the plasma during the deposition process were monitored to get information about the plasma properties, Raman spectra were measured to study the structural characteristics of the deposited films. The combinatorial analysis of OES and Raman spectra results demonstrated that the OES can be used as a fast method to diagnose phase transition from amorphous to microcrystalline silicon. At last the physical mechanism, why both OES and Raman can be used to diagnose the phase transition, was analyzed theoretically.……

  15. A fast method to diagnose phase transition from amorphous to microcrystalline silicon

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    @@ A series of hydrogenated silicon thin films were prepared by the radio frequency plasma enhanced chemical vapor deposition method (RF-PECVD) with various silane concentrations. The influence of silane concentration on structural and electrical characteristics of these films was investigated to study the phase transition region from amorphous to microcrystalline phase. At the same time, optical emission spectra (OES) from the plasma during the deposition process were monitored to get information about the plasma properties, Raman spectra were measured to study the structural characteristics of the deposited films. The combinatorial analysis of OES and Raman spectra results demonstrated that the OES can be used as a fast method to diagnose phase transition from amorphous to microcrystalline silicon. At last the physical mechanism, why both OES and Raman can be used to diagnose the phase transition, was analyzed theoretically.

  16. Low Cost Amorphous Silicon Intrinsic Layer for Thin-Film Tandem Solar Cells

    Directory of Open Access Journals (Sweden)

    Ching-In Wu

    2013-01-01

    Full Text Available The authors propose a methodology to improve both the deposition rate and SiH4 consumption during the deposition of the amorphous silicon intrinsic layer of the a-Si/μc-Si tandem solar cells prepared on Gen 5 glass substrate. It was found that the most important issue is to find out the saturation point of deposition rate which guarantees saturated utilization of the sourcing gas. It was also found that amorphous silicon intrinsic layers with the same k value will result in the same degradation of the fabricated modules. Furthermore, it was found that we could significantly reduce the production cost of the a-Si/μc-Si tandem solar cells prepared on Gen 5 glass substrate by fine-tuning the process parameters.

  17. Carbon nanotube-amorphous silicon hybrid solar cell with improved conversion efficiency.

    Science.gov (United States)

    Funde, Adinath M; Nasibulin, Albert G; Syed, Hashmi Gufran; Anisimov, Anton S; Tsapenko, Alexey; Lund, Peter; Santos, J D; Torres, I; Gandía, J J; Cárabe, J; Rozenberg, A D; Levitsky, Igor A

    2016-05-01

    We report a hybrid solar cell based on single walled carbon nanotubes (SWNTs) interfaced with amorphous silicon (a-Si). The high quality carbon nanotube network was dry transferred onto intrinsic a-Si forming Schottky junction for metallic SWNT bundles and heterojunctions for semiconducting SWNT bundles. The nanotube chemical doping and a-Si surface treatment minimized the hysteresis effect in current-voltage characteristics allowing an increase in the conversion efficiency to 1.5% under an air mass 1.5 solar spectrum simulator. We demonstrated that the thin SWNT film is able to replace a simultaneously p-doped a-Si layer and transparent conductive electrode in conventional amorphous silicon thin film photovoltaics. PMID:27005494

  18. Highly efficient ultrathin-film amorphous silicon solar cells on top of imprinted periodic nanodot arrays

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Wensheng, E-mail: yws118@gmail.com; Gu, Min, E-mail: mgu@swin.edu.au [Centre for Micro-Photonics, Faculty of Science, Engineering and Technology, Swinburne University of Technology, Hawthorn, Victoria 3122 (Australia); Tao, Zhikuo [College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Ong, Thiam Min Brian [Plasma Sources and Application Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)

    2015-03-02

    The addressing of the light absorption and conversion efficiency is critical to the ultrathin-film hydrogenated amorphous silicon (a-Si:H) solar cells. We systematically investigate ultrathin a-Si:H solar cells with a 100 nm absorber on top of imprinted hexagonal nanodot arrays. Experimental evidences are demonstrated for not only notable silver nanodot arrays but also lower-cost ITO and Al:ZnO nanodot arrays. The measured external quantum efficiency is explained by the simulation results. The J{sub sc} values are 12.1, 13.0, and 14.3 mA/cm{sup 2} and efficiencies are 6.6%, 7.5%, and 8.3% for ITO, Al:ZnO, and silver nanodot arrays, respectively. Simulated optical absorption distribution shows high light trapping within amorphous silicon layer.

  19. Amorphous and 'micromorph' silicon tandem cells with high open-circuit voltage

    Energy Technology Data Exchange (ETDEWEB)

    Loeffler, J.; Gordijn, A.; Stolk, R.L.; Li, H.; Rath, J.K.; Schropp, R.E.I. [Utrecht University (Netherlands). Debye Inst.

    2005-05-01

    For amorphous and 'micromorph' silicon multi-junction solar cells, we have developed tunnel recombination junctions consisting of two microcrystalline doped layers with a defect-rich interface. While the solar cells performed reasonably well under AM 1.5 light, we found in spectral response measurements that the first deposited cell of tandem structures in nip and pin configuration was apparently leaking under low light conditions. Insertion of a thin protection layer of n-type amorphous silicon solved this issue, and led to an increase in open-circuit voltage. Voltages as high as 1.76 V have been obtained for a-Si/a-Si pinpin tandem cells. (author)

  20. A delta-doped amorphous silicon thin-film transistor with high mobility and stability

    International Nuclear Information System (INIS)

    Ultrathin doped layers, known as delta-doped layers, were introduced within the intrinsic amorphous silicon (a-Si) active layer to fabricate hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with enhanced field-effect mobility. The performance of the delta-doped a-Si:H TFTs depended on the phosphine (PH3) flow rate and the distance from the n+ a-Si to the delta-doping layer. The delta-doped a-Si:H TFTs fabricated using a commercial manufacturing process exhibited an enhanced field-effect mobility of approximately ∼0.23 cm2/Vs (compared to a conventional a-Si:H TFT with 0.15 cm2/Vs) and a desirable stability under a bias-temperature stress test.

  1. Amorphous Silicon-Germanium Films with Embedded Nanocrystals for Thermal Detectors with Very High Sensitivity

    Directory of Open Access Journals (Sweden)

    Cesar Calleja

    2016-01-01

    Full Text Available We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR, which is a signature of the sensitivity in thermal detectors (microbolometers. Morphological, electrical, and optical characterization were performed in the films, and we found optimal conditions for obtaining films with very high values of thermal coefficient of resistance (TCR = 7.9% K−1. Our results show that amorphous silicon-germanium films with embedded nanocrystals can be used as thermosensitive films in high performance infrared focal plane arrays (IRFPAs used in commercial thermal cameras.

  2. Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

    Energy Technology Data Exchange (ETDEWEB)

    Munoz, D. [XaRMAE-Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Diagonal 647, Barcelona 08028 (Spain)], E-mail: delfina@eel.upc.edu; Voz, C.; Blanque, S. [Universitat Politecnica de Catalunya, Grup de Recerca en Micro i Nanotecnologies, Jordi Girona 1-3, Barcelona 08034 (Spain); Ibarz, D.; Bertomeu, J. [XaRMAE-Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Diagonal 647, Barcelona 08028 (Spain); Alcubilla, R. [Universitat Politecnica de Catalunya, Grup de Recerca en Micro i Nanotecnologies, Jordi Girona 1-3, Barcelona 08034 (Spain)

    2009-03-15

    In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances ({rho}{sub c} {approx} 10 m{omega} cm{sup 2}) have been obtained on 2.8 {omega} cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.

  3. Adopting a customer-focused team approach to amorphous silicon multijunction module R ampersand D

    International Nuclear Information System (INIS)

    Informed observers of energy markets now generally believe that photovoltaics (PV) will not significantly penetrate the utility bulk-power sector before price and performance approach $50/m2 for 15% efficient modules in flat-plate systems. Recent progress toward such ''utility grade'' modules using amorphous thin films has been slow. The important amorphous thin-film research issues have been well known for some years. These have not been promptly and conclusively addressed, at least in part, because of inadequate PV industry involvement in academic research. In view of this situation, the authors recently modified their research programs seeking to improve the efficiency of amorphous silicon PV research, conclusively address the key issues, and accelerate commercial introduction of utility-grade products. They began this by seeking ''customer'' (PV industry) specification of research priorities and forming mission-oriented teams to pursue the high-priority issues (customer requirements). This paper describes the process and results to date

  4. Optical Waveform Sampling of a 320 Gbit/s Serial Data Signal using a Hydrogenated Amorphous Silicon Waveguide

    DEFF Research Database (Denmark)

    Ji, Hua; Hu, Hao; Pu, Minhao;

    2011-01-01

    We propose using a hydrogenated amorphous silicon waveguide for ultra-high-speed serial data waveform sampling. 320 Gbit/s serial optical data sampling is experimentally demonstrated with +12 dB intrinsic four wave mixing conversion efficiency.......We propose using a hydrogenated amorphous silicon waveguide for ultra-high-speed serial data waveform sampling. 320 Gbit/s serial optical data sampling is experimentally demonstrated with +12 dB intrinsic four wave mixing conversion efficiency....

  5. The influence of liquid crystal display monitors on observer performance for the detection of interstitial lung markings on both storage phosphor and flat-panel-detector chest radiography

    Energy Technology Data Exchange (ETDEWEB)

    Sung, Yon Mi [Department of Radiology and Center for Imaging Science, Samsung Medical Center, Sungkyunkwan University School of Medicine, 50, Ilwon-dong, Kangnam-ku, Seoul 135-710 (Korea, Republic of); Department of Radiology, Gachon University Gil Hospital, 1198, Guwol-dong, Namdong-gu, Incheon 405-760 (Korea, Republic of); Chung, Myung Jin [Department of Radiology and Center for Imaging Science, Samsung Medical Center, Sungkyunkwan University School of Medicine, 50, Ilwon-dong, Kangnam-ku, Seoul 135-710 (Korea, Republic of)], E-mail: mj1.chung@samsung.com; Lee, Kyung Soo [Department of Radiology and Center for Imaging Science, Samsung Medical Center, Sungkyunkwan University School of Medicine, 50, Ilwon-dong, Kangnam-ku, Seoul 135-710 (Korea, Republic of); Choe, Bong-Keun [Department of Preventive Medicine, School of Medicine, Kyunghee University, Seoul (Korea, Republic of)

    2010-04-15

    Purpose: To compare observer performance with a flat-panel liquid crystal display (LCD) monitor and with a high-resolution gray-scale cathode ray tube (CRT) monitor in the detection of interstitial lung markings using a silicon flat-panel-detector direct radiography (DR) and storage phosphor computed radiography (CR) in a clinical setting. Materials and methods: We displayed 39 sets of posteroanterior chest radiographs from the patients who were suspected of interstitial lung disease. Each sets consisted of DR, CR and thin-section CT as the reference standard. Image identities were masked, randomly sorted, and displayed on both five mega pixel (2048 x 2560 x 8 bits) LCD and CRT monitors. Ten radiologists independently rated their confidence in detection for the presence of linear opacities in the four fields of the lungs; right upper, left upper, right lower, and left lower quadrant. Performance of a total 6240 (39 sets x 2 detector systems x 2 monitor system x 4 fields x 10 observers) observations was analyzed by multi-reader multi-case receiver operating characteristic (ROC) analysis. Differences between monitor systems in combinations of detector systems were compared using ANOVA and paired-samples t-test. Results: Area under curves (AUC) for the presence of linear opacities measured by ROC analysis was higher on the LCDs than CRTs without statistical significance (p = 0.082). AUC was significantly higher on the DR systems than CR systems (p = 0.006). AUC was significantly higher on the LCDs than CRTs for DR systems (p = 0.039) but not different for CR systems (p = 0.301). Conclusion: In clinical conditions, performance of the LCD monitor appears to be better for detecting interstitial lung markings when interfaced with DR systems.

  6. Improved stability of hydrogenated amorphous-silicon photosensitivity by ultraviolet illumination

    Science.gov (United States)

    Branz, Howard M.; Xu, Yueqin; Heck, Stephan; Gao, Wei

    2002-10-01

    Postdeposition ultraviolet (UV) illumination, followed by etching, improves the stability of hydrogenated amorphous-silicon thin films against subsequent light-induced degradation of photosensitivity. The etch removes a heavily damaged layer extending about 100 nm below the surface, but beneath the damage, the UV has improved the stability of 200 to 300 nm of bulk film. The open-circuit voltage of Schottky solar cells is also stabilized by UV-etch treatment. Possible mechanisms are discussed.

  7. Magneto-optical switch with amorphous silicon waveguides on magneto-optical garnet

    Science.gov (United States)

    Ishida, Eiichi; Miura, Kengo; Shoji, Yuya; Mizumoto, Tetsuya; Nishiyama, Nobuhiko; Arai, Shigehisa

    2016-08-01

    We fabricated a magneto-optical (MO) switch with a hydrogenated amorphous silicon waveguide on an MO garnet. The switch is composed of a 2 × 2 Mach-Zehnder interferometer (MZI). The switch state is controlled by an MO phase shift through a magnetic field generated by a current flowing in an electrode located on the MZI. The switching operation was successfully demonstrated with an extinction ratio of 11.7 dB at a wavelength of 1550 nm.

  8. High Kerr nonlinearity hydrogenated amorphous silicon nanowires with low two photon absorption and high optical stability

    CERN Document Server

    Grillet, C; Monat, C; Grosse, P; Bakir, B Ben; Menezo, S; Fedeli, J M; Moss, David J

    2014-01-01

    We demonstrate optically stable amorphous silicon nanowires with both high nonlinear figure of merit (FOM) of ~5 and high nonlinearity Re({\\gamma}) = 1200W-1m-1. We observe no degradation in these parameters over the entire course of our experiments including systematic study under operation at 2 W coupled peak power (i.e. ~2GW/cm2) over timescales of at least an hour.

  9. Highly Efficient Hybrid Polymer and Amorphous Silicon Multijunction Solar Cells with Effective Optical Management.

    Science.gov (United States)

    Tan, Hairen; Furlan, Alice; Li, Weiwei; Arapov, Kirill; Santbergen, Rudi; Wienk, Martijn M; Zeman, Miro; Smets, Arno H M; Janssen, René A J

    2016-03-16

    Highly efficient hybrid multijunction solar cells are constructed with a wide-bandgap amorphous silicon for the front subcell and a low-bandgap polymer for the back subcell. Power conversion efficiencies of 11.6% and 13.2% are achieved in tandem and triple-junction configurations, respectively. The high efficiencies are enabled by deploying effective optical management and by using photoactive materials with complementary absorption. PMID:26780260

  10. Failure analysis of thin-film amorphous-silicon solar-cell modules

    Science.gov (United States)

    Kim, Q.

    1984-01-01

    A failure analysis of thin film amorphous silicon solar cell modules was conducted. The purpose of this analysis is to provide information and data for appropriate corrective action that could result in improvements in product quality and reliability. Existing techniques were expanded in order to evaluate and characterize degradational performance of a-Si solar cells. Microscopic and macroscopic defects and flaws that significantly contribute to performance degradation were investigated.

  11. Stable, highly nonlinear amorphous silicon nanowires with very low nonlinear absorption

    CERN Document Server

    Carletti, Luca; Grossec, Phillipe; Ben-Bakir, Badhise; Menezoc, Sylvie; Fedelic, Jean-Marc; Moss, David J; Monat, Christelle

    2014-01-01

    The nonlinear characteristics of hydrogenated amorphous silicon nanowires are experimentally demonstrated. A high nonlinear refractive index, n2=1.19 x 10-17 m2/W, combined with a low two-photon absorption, 0.14 x 10-11 m/W, resulted in a high nonlinear FOM of 5.5. Furthermore, systematic studies over hours of operational time under 2.2W of pulse peak power revealed no degradation of the optical response.

  12. CORRELATION BETWEEN ELECTRICAL AND VIBRATIONAL PROPERTIES OF CHLORINATED AND HYDROGENATED AMORPHOUS SILICON PREPARED BY GLOW DISCHARGE

    OpenAIRE

    Al Dallal, S.; Chevallier, J.; Kalem, S; Bourneix, J.

    1982-01-01

    Electrical conductivity and infrared transmission measurements have been carried out on chlorinated and hydrogenated amorphous silicon films prepared by glow discharge. Upon increasing the plasma power, we observed a change of transport mechanism, accompanied by an evolution of hydrogen and chlorine related bands. From this correlation between the transport and the infrared data we suggest that the evolution of SiCl2 species with the plasma power is mainly responsible for the change in bandga...

  13. HEATING OF CRYSTALLINE AND AMORPHOUS SILICON BY C-SWITCHED LASER RADIATION

    OpenAIRE

    Meyer, J.; Bartoli, F.; Kruer, M.

    1980-01-01

    A theory for optical heating in semiconductors has been formulated in terms of the coupled diffusion equations for heat and excess carriers. Closed-form solutions for the region near the surface of the material have been obtained in the general case where the optical and transport parameters of the semiconductor are allowed to depend in an arbitrary way on temperature and laser-generated carrier density. The theory is applied here to heating of crystalline and amorphous silicon by Q-switched ...

  14. Activated mechanisms in amorphous silicon: an activation-relaxation-technique study

    OpenAIRE

    Mousseau, N.; Barkema, G. T.

    1999-01-01

    At low temperatures, dynamics in amorphous silicon occurs through a sequence of discrete activated events that locally reorganize the topological network. Using the activation-relaxation technique, a data base containing over 8000 such events is generated, and the events are analyzed with respect to their energy barrier and asymmetry, displacement and volume expansion/contraction. Special attention is paid to those events corresponding to diffusing coordination defects. The energetics is not ...

  15. Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon

    OpenAIRE

    Astakhov, O.; Carius, R.; F. Finger; Petrusenko, Y.; Borysenko, V.; Barankov, D.

    2009-01-01

    The influence of dangling-bond defects and the position of the Fermi level on the charge carrier transport properties in undoped and phosphorous doped thin-film silicon with structure compositions all the way from highly crystalline to amorphous is investigated. The dangling-bond density is varied reproducibly over several orders of magnitude by electron bombardment and subsequent annealing. The defects are investigated by electron-spin-resonance and photoconductivity spectroscopies. Comparin...

  16. Vibrational properties of amorphous silicon from tight-binding O(N) calculation

    OpenAIRE

    Biswas, Parthapratim

    2001-01-01

    We present an O(N) algorithm to study the vibrational properties of amorphous silicon within the framework of tight-binding approach. The dynamical matrix elements have been evaluated numerically in the harmonic approximation exploiting the short-range nature of the density matrix to calculate the vibrational density of states which is then compared with the same obtained from a standard O($N^4$) algorithm. For the purpose of illustration, an 1000-atom model is studied to calculate the locali...

  17. Results on photon and neutron irradiation of semitransparent amorphous-silicon sensors

    CERN Document Server

    Carabe, J; Ferrando, A; Fuentes, J; Gandia, J J; Josa-Mutuberria, I; Molinero, A; Oller, J C; Arce, P; Calvo, E; Figueroa, C F; García, N; Matorras, F; Rodrigo, T; Vila, I; Virto, A L; Fenyvesi, A; Molnár, J; Sohler, D

    2000-01-01

    Semitransparent amorphous-silicon sensors are basic elements for laser 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in a very hard radiation environment. Two different sensor types have been irradiated with /sup 60/Co photons (up to 100 kGy) and fast neutrons (up to 10/sup 15 / cm/sup -2/), and the subsequent change in their performance has been measured. (13 refs).

  18. The Interplay of Quantum Confinement and Hydrogenation in Amorphous Silicon Quantum Dots

    OpenAIRE

    Askari, Sadegh; Svrcek, Vladmir; Maguire, Paul; Mariotti, Davide

    2015-01-01

    Hydrogenation in amorphous silicon quantum dots (QDs) has a dramatic impact on the corresponding optical properties and band energy structure, leading to a quantum‐confined composite material with unique characteristics. The synthesis of a‐Si:H QDs is demonstrated with an atmospheric‐pressure plasma process, which allows for accurate control of a highly chemically reactive non‐equilibrium environment with temperatures well below the crystallization temperature of Si QDs.

  19. The Interplay of Quantum Confinement and Hydrogenation in Amorphous Silicon Quantum Dots.

    Science.gov (United States)

    Askari, Sadegh; Svrcek, Vladmir; Maguire, Paul; Mariotti, Davide

    2015-12-22

    Hydrogenation in amorphous silicon quantum dots (QDs) has a dramatic impact on the corresponding optical properties and band energy structure, leading to a quantum-confined composite material with unique characteristics. The synthesis of a-Si:H QDs is demonstrated with an atmospheric-pressure plasma process, which allows for accurate control of a highly chemically reactive non-equilibrium environment with temperatures well below the crystallization temperature of Si QDs. PMID:26523743

  20. First Measurements of the Performance of New Semitransparent Amorphous Silicon Sensor Prototypes

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A.; Calvo, E.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J. M.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

    2004-07-01

    We present first results on the performance of a new generation of semitransparent amorphous silicon position detectors having good properties such as an intrinsic position resolution better than 5{mu}m, an spatial point reconstruction precision better than 10 {mu}m, deflection angles smaller than 10{mu}rad and transmission in the visible and NIR higher than 70%. In addition the sensitive area is very large: 30x30 cm''3. (Author) 10 refs.

  1. The boron-tailing myth in hydrogenated amorphous silicon solar cells

    OpenAIRE

    Stuckelberger, M.; Park, B.-S.; Bugnon, G.; Despeisse, M; Schüttauf, J.-W.; Haug, F.-J.; Ballif, C.

    2015-01-01

    The boron-tailing effect in hydrogenated amorphous silicon (a-Si:H) solar cells describes the reduced charge collection specifically in the blue part of the spectrum for absorber layers deposited above a critical temperature. This effect limits the device performance of state-of-the art solar cells: For enhanced current density (reduced bandgap), the deposition temperature should be as high as possible, but boron tailing gets detrimental above 200°C. To investigate this limitation and to show...

  2. 2H-SiC Dendritic Nanocrystals In Situ Formation from Amorphous Silicon Carbide under Electron Beam Irradiation

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Under electron beam irradiation, the in-situ formation of 2H-SiC dentritic nanocrystals from amorphous silicon carbide at room temperature was observed. The homogenous transition mainly occurs at the thin edge and on the surface of specimen where the energy obtained from electron beam irradiation is high enough to cause the amorphous crystallizing into 2H-SiC.

  3. Transition metal oxide window layer in thin film amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Pin-type hydrogenated amorphous silicon solar cells have been fabricated by replacing state of the art silicon based window layer with more transparent transition metal oxide (TMO) materials. Three kinds of TMOs: vanadium oxide, tungsten oxide, and molybdenum oxide (MoOx) were comparatively investigated to reveal the design principles of metal oxide window layers. It was found that MoOx exhibited the best performance due to its higher work function property compared to other materials. In addition, the band alignment between MoOx and amorphous Si controls the series resistance, which was verified through compositional variation of MoOx thin films. The design principles of TMO window layer in amorphous Si solar cells are summarized as follows: A wide optical bandgap larger than 3.0 eV, a high work function larger than 5.2 eV, and a band alignment condition rendering efficient hole collection from amorphous Si absorber layer. - Highlights: • High work function metal oxides can potentially replace the conventional p-a-SiC. • V2Ox, WOx, and MoOx are comparatively investigated in this study. • MoOx is the most relevant material due to its highest work function. • Slightly oxygen deficient MoOx exhibited performance enhancement at x = 2.9

  4. Amorphous silicon image sensors for x-ray detection in NDT

    International Nuclear Information System (INIS)

    Acquiring radiographic images in a digital format offers significant advantages over film. Besides eliminating the need for chemical processing, a digital image can be easily stored for more convenient retrieval, transmitted to remote locations for interpretation, and image processed to provide enhanced interpretation and greater latitude in exposure. Amorphous silicon image sensors, developed by dpiX, a Xerox Company, offer an improved method of acquiring digital x-ray images. Amorphous silicon image sensor technology provides the opportunity to have large format size similar to x-ray film, high resolution, and a compact package for ease of use in NDT applications. This technology can also be used to replace x-ray image intensifier tubes to provide real-time fluoroscopic imaging for capturing time related events such as x-ray examination of objects on a conveyor belt. This paper presents a description of amorphous silicon image sensor technology and provides examples of the performance that can be achieved using a system that has an 8 x 10 inch x-ray image acquisition area and 127 micron pixels for 4 lp/mm resolution

  5. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio, R., E-mail: rambrosi@uacj.mx [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Moreno, M.; Torres, A. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Carrillo, A. [Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Vivaldo, I.; Cosme, I. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Heredia, A. [Universidad Popular Autónoma del Estado de Puebla, Puebla (Mexico)

    2015-09-15

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σ{sub dark} changed by 5 order of magnitude under illumination, V{sub d} was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH{sub 4}, H{sub 2}, Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σ{sub RT}), activation energy (E{sub a}), and optical band gap (E{sub g}). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications.

  6. Embedded LTPS flash cells with oxide-nitride-oxynitride stack structure for realization of multi-function mobile flat panel displays

    International Nuclear Information System (INIS)

    In this paper, embedded flash (eFlash) cells were fabricated for realization of multi-functions, such as systems on panels (SOPs) and threshold voltage (VTH) stabilization of flat panel displays (FPDs). Fabrication was via low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology and an oxide-nitride-oxynitride (ONOn) stack structure on glass. Poly-silicon (poly-Si) on glass, which was annealed via an excimer laser, has a very rough surface. To fabricate LTPS eFlash cells on glass with a very rough poly-Si surface, plasma-assisted oxynitridation was performed; nitrous oxide (N2O) served as a reactive gas. LTPS eFlash cells have excellent TFT electrical properties, such as VTH, a high On/Off current ratio and a low sub-threshold swing (S). The results demonstrate that eFlash cells fabricated on glass with a rough silicon surface, via an ONOn stack structure, have switching characteristics suitable for data storage, such as a low operating voltage (TH, which exceeds 2.3 V, between the programming and erasing (P/E) states, over a period of 10 years, and the capacity to retain the initial ΔVTH over a period of 105 P/E operations. (fast track communication)

  7. Embedded LTPS flash cells with oxide-nitride-oxynitride stack structure for realization of multi-function mobile flat panel displays

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Sungwook; Kim, Jaehong; Son, Hyukjoo; Jang, Kyungsoo; Cho, Jaehyun; Kim, Kyunghae; Choi, Byoungdeog; Yi, Junsin [School of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of)], E-mail: yi@yurim.skku.ac.kr

    2008-09-07

    In this paper, embedded flash (eFlash) cells were fabricated for realization of multi-functions, such as systems on panels (SOPs) and threshold voltage (V{sub TH}) stabilization of flat panel displays (FPDs). Fabrication was via low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology and an oxide-nitride-oxynitride (ONOn) stack structure on glass. Poly-silicon (poly-Si) on glass, which was annealed via an excimer laser, has a very rough surface. To fabricate LTPS eFlash cells on glass with a very rough poly-Si surface, plasma-assisted oxynitridation was performed; nitrous oxide (N{sub 2}O) served as a reactive gas. LTPS eFlash cells have excellent TFT electrical properties, such as V{sub TH}, a high On/Off current ratio and a low sub-threshold swing (S). The results demonstrate that eFlash cells fabricated on glass with a rough silicon surface, via an ONOn stack structure, have switching characteristics suitable for data storage, such as a low operating voltage (<{+-}10 V) suitable for mobile FPDs, a threshold voltage window, {delta}V{sub TH}, which exceeds 2.3 V, between the programming and erasing (P/E) states, over a period of 10 years, and the capacity to retain the initial {delta}V{sub TH} over a period of 10{sup 5} P/E operations. (fast track communication)

  8. Comparing Ovarian Radiation Doses in Flat-Panel and Conventional Angiography During Uterine Artery Embolization: A Randomized Clinical Trial

    International Nuclear Information System (INIS)

    Uterine artery embolization (UAE) is a minimally invasive procedure performed under fluoroscopy for the treatment of uterine fibroids and accompanied by radiation exposure. To compare ovarian radiation doses during uterine artery embolization (UAE) in patients using conventional digital subtraction angiography (DSA) with those using digital flat-panel technology. Thirty women who were candidates for UAE were randomly enrolled for one of the two angiographic systems. Ovarian doses were calculated according to in-vitro phantom study results using entrance and exit doses and were compared between the two groups. The mean right entrance dose was 1586±1221 mGy in the conventional and 522.3±400.1 mGy in the flat panel group (P=0.005). These figures were 1470±1170 mGy and 456±396 mGy, respectively for the left side (P=0.006). The mean right exit dose was 18.8±12.3 for the conventional and 9.4±6.4 mGy for the flat panel group (P=0.013). These figures were 16.7±11.3 and 10.2±7.2 mGy, respectively for the left side (P=0.06). The mean right ovarian dose was 139.9±92 in the conventional and 23.6±16.2 mGy in the flat panel group (P<0.0001). These figures were 101.7±77.6 and 24.6±16.9 mGy, respectively for the left side (P=0.002). Flat panel system can significantly reduce the ovarian radiation dose during UAE compared with conventional DSA

  9. Amorphous silicon thin films: The ultimate lightweight space solar cell

    Science.gov (United States)

    Vendura, G. J., Jr.; Kruer, M. A.; Schurig, H. H.; Bianchi, M. A.; Roth, J. A.

    1994-01-01

    Progress is reported with respect to the development of thin film amorphous (alpha-Si) terrestrial solar cells for space applications. Such devices promise to result in very lightweight, low cost, flexible arrays with superior end of life (EOL) performance. Each alpha-Si cell consists of a tandem arrangement of three very thin p-i-n junctions vapor deposited between film electrodes. The thickness of this entire stack is approximately 2.0 microns, resulting in a device of negligible weight, but one that must be mechanically supported for handling and fabrication into arrays. The stack is therefore presently deposited onto a large area (12 by 13 in), rigid, glass superstrate, 40 mil thick, and preliminary space qualification testing of modules so configured is underway. At the same time, a more advanced version is under development in which the thin film stack is transferred from the glass onto a thin (2.0 mil) polymer substrate to create large arrays that are truly flexible and significantly lighter than either the glassed alpha-Si version or present conventional crystalline technologies. In this paper the key processes for such effective transfer are described. In addition, both glassed (rigid) and unglassed (flexible) alpha-Si cells are studied when integrated with various advanced structures to form lightweight systems. EOL predictions are generated for the case of a 1000 W array in a standard, 10 year geosynchronous (GEO) orbit. Specific powers (W/kg), power densities (W/sq m) and total array costs ($/sq ft) are compared.

  10. Raman study of localized recrystallization of amorphous silicon induced by laser beam

    KAUST Repository

    Tabet, Nouar A.

    2012-06-01

    The adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter. © 2012 IEEE.

  11. Properties of hydrogenated amorphous silicon (a-Si:H) deposited using a microwave Ecr plasma

    International Nuclear Information System (INIS)

    Hydrogenated amorphous silicon (a-Si:H) films have been widely applied to semiconductor devices, such as thin film transistors, solar cells and photosensitive devices. In this work, the first Si-H-Cl alloys (obtained at the National Institute for Nuclear Research of Mexico) were formed by a microwave electron cyclotron resonance (Ecr) plasma CVD method. Gaseous mixtures of silicon tetrachloride (Si Cl4), hydrogen and argon were used. The Ecr plasma was generated by microwaves at 2.45 GHz and a magnetic field of 670 G was applied to maintain the discharge after resonance condition (occurring at 875 G). Si and Cl contents were analyzed by Rutherford Backscattering Spectrometry (RBS). It was found that, increasing proportion of Si Cl4 in the mixture or decreasing pressure, the silicon and chlorine percentages decrease. Optical gaps were obtained by spectrophotometry. Decreasing temperature, optical gap values increase from 1.4 to 1.5 eV. (Author)

  12. Accelerated growth from amorphous clusters to metallic nanoparticles observed in electrochemical deposition of platinum within nanopores of porous silicon

    NARCIS (Netherlands)

    Munoz-Noval, Alvaro; Fukami, Kazuhiro; Koyama, Akira; Gallach, Dario; Hermida-Merino, Daniel; Portale, Giuseppe; Kitada, Atsushi; Murase, Kuniaki; Abe, Takeshi; Hayakawa, Shinjiro; Sakka, Tetsuo

    2016-01-01

    This study examined the formation of amorphous platinum (Pt) clusters in nanopores of porous silicon at an initial stage of pore filling. The time dependency of the chemical state and local structure of Pt in the nanoporous silicon were characterized by X-ray absorption fine structure spectroscopy (

  13. Hydrogenated amorphous silicon oxide containing a microcrystalline silicon phase and usage as an intermediate reflector in thin-film silicon solar cells

    OpenAIRE

    Lambertz, A.; Grundler, T.; F. Finger

    2011-01-01

    To further improve the stability of amorphous/microcrystalline silicon (a-Si:H/mu c-Si:H) tandem solar cells, it is important to reduce the thickness of the a-Si: H top cell. This can be achieved by introduction of an intermediate reflector between the a-Si: H top and the mu c-Si: H bottom cell which reflects light back into the a-Si: H cell and thus, increases its photocurrent at possibly reduced thickness. Microcrystalline silicon oxide (mu c-SiOx:H) is used for this purpose and the trade-o...

  14. Energy investments and production costs of amorphous silicon PV modules

    Energy Technology Data Exchange (ETDEWEB)

    Srinivas, K.S. (Neuchatel Univ., Inst. de Microtechnique, Neuchatel (Switzerland))

    1991-10-01

    Viability of large scale applications of photovoltaic technology will ultimately depend upon the economics of energy payback and production costs associated with it. For the potential options among the various PV technologies this aspect has been analysed to a considerable extent for crystalline silicon (mono- and poly-) modules. No systematic study, based on practical aspects of A-Si PV module production has yet been reported. In this study the energy investments and production costs of A-Si PV module production have been analysed based on factual data from two manufacturing units. Each process step involved in the manufacture of A-Si modules is analysed for the process electrical energy and the hidden energy content in the various materials associated with that step. Energy payback period and the production costs have been calculated on the basis of prevailing levels of conversion efficiency (5%) and production yield ([approx equal]80%). The report also covers salient features of A-Si technology, the current status of PV industry in respect of production, R+D and cost status of competing PV technologies. A review of earlier studies on energy investments and production costs of A-Si modules and a comparison of their findings with that of the present study are also discussed. Certain details which could not be included in the main text to maintain the continuity of thoughts, are presented as annexes. A short note on 'criteria for choice of technology for large scale PV production' and a brief description of the status of other thin-film technologies (CIS,CdTe) are included as Appendices at the end. figs., tabs., 18 refs.

  15. Reliability of myocardial perfusion quantification in angiography using a digital flat panel cardiac system

    Science.gov (United States)

    Perrin, Muriel; Vaillant, Regis; Gavit-Houdant, Laurence; Lienard, Jean; Benali, Karim

    2002-04-01

    Discordance between lesion severity from angiocardiography and physiological effects has been reported elsewhere. Quantification of myocardial perfusion during the angiography procedure may supply additional information about short- and long-term outcomes and may be helpful for clinical decision making. In previous works, myocardial perfusion has been assessed using time density curves (TDC), which represent the contrast medium dilution over time in the myocardium. The mean transit time (MTT), derived from the TDC, has been reported as a good indicator of the regional myocardial perfusion. Our objective is to estimate the accuracy and reproducibility of MTT estimation on digital flat panel (DFP) images. We have simulated typical myocardium TDC obtained with a DFP cardiac system (Innova 2000, GE), taking into account scatter and noise. Logarithmic or linear subtractions have been applied to derive a contrast medium concentration proportional quantity from image intensity. A non-linear minimisation realises the model curve fitting. MTT estimates are more stable with linear subtraction in presence of scatter. However logarithmic subtraction presents smaller bias when scatter level is small. Both approaches are equally sensible to image noise. Linear subtraction should be preferred. Image noise has a high influence on MTT accuracy and we may reduce.

  16. Average power scaling of UV excimer lasers drives flat panel display and lidar applications

    Science.gov (United States)

    Herbst, Ludolf; Delmdahl, Ralph F.; Paetzel, Rainer

    2012-03-01

    Average power scaling of 308nm excimer lasers has followed an evolutionary path over the last two decades driven by diverse industrial UV laser microprocessing markets. Recently, a new dual-oscillator and beam management concept for high-average power upscaling of excimer lasers has been realized, for the first time enabling as much as 1.2kW of stabilized UV-laser average output power at a UV wavelength of 308nm. The new dual-oscillator concept enables low temperature polysilicon (LTPS) fabrication to be extended to generation six glass substrates. This is essential in terms of a more economic high-volume manufacturing of flat panel displays for the soaring smartphone and tablet PC markets. Similarly, the cost-effective production of flexible displays is driven by 308nm excimer laser power scaling. Flexible displays have enormous commercial potential and can largely use the same production equipment as is used for rigid display manufacturing. Moreover, higher average output power of 308nm excimer lasers aids reducing measurement time and improving the signal-to-noise ratio in the worldwide network of high altitude Raman lidar stations. The availability of kW-class 308nm excimer lasers has the potential to take LIDAR backscattering signal strength and achievable altitude to new levels.

  17. Dynamic chest radiography with a flat-panel detector (FPD): ventilation-perfusion study

    Science.gov (United States)

    Tanaka, R.; Sanada, S.; Fujimura, M.; Yasui, M.; Tsuji, S.; Hayashi, N.; Okamoto, H.; Nanbu, Y.; Matsui, O.

    2011-03-01

    Pulmonary ventilation and blood flow are reflected in dynamic chest radiographs as changes in X-ray translucency, i.e., pixel values. This study was performed to investigate the feasibility of ventilation-perfusion (V/Q) study based on the changes in pixel value. Sequential chest radiographs of a patient with ventilation-perfusion mismatch were obtained during respiration using a dynamic flat-panel detector (FPD) system. The lung area was recognized and average pixel value was measured in each area, tracking and deforming the region of interest. Inter-frame differences were then calculated, and the absolute values were summed in each respiratory phase. The results were visualized as ventilation, blood flow, V/Q ratio distribution map and compared to distribution of radioactive counts on ventilation and perfusion scintigrams. In the results, abnormalities were appeared as a reduction of changes in pixel values, and a correlation was observed between the distribution of changes in pixel value and those of radioactivity counts (Ventilation; r=0.78, Perfusion; r=0.77). V/Q mismatch was also indicated as mismatch of changes in pixel value, and a correlation with V/Q calculated by radioactivity counts (r=0.78). These results indicated that the present method is potentially useful for V/Q study as an additional examination in conventional chest radiography.

  18. An Output Channel Nonuniformity Compensation Driving Method in Flat Panel Display Driving Circuits

    Science.gov (United States)

    Kim, Jin-Ho; Ahn, Soon-Sung; Kwon, Christine H.; Kim, Seon-Yung; Lee, Jae-Sic; Choi, Byong-Deok

    2006-12-01

    Modern flat panel displays, including thin-film transistor liquid crystal displays (TFT-LCDs) and organic light-emitting diodes (OLEDs), pursue more and more natural color expression. This requires the data driving system should produce very fine and accurate signal voltages or currents. Especially, the uniformity among channels of a driving system is critically important because the color or luminance differences among columns are easily noticeable. We propose a simple and efficient driving method for solving the artifacts caused by the existing nonuniformity among channels of a driving system, and confirms its impact by simulations using C-programming. The nonuniformity among channels mostly stem from the random offset of the output circuits of a driving system, which in turn is caused by the process variations. The proposed driving method shares N-output circuits between N-output channels such that the existing offsets of the channels are averaged out. Thus, the output signal error due to the offsets spreads out among the channels, improving the uniformity between the channels.

  19. Clinical investigation of flat panel CT following middle ear reconstruction: a study of 107 patients

    Energy Technology Data Exchange (ETDEWEB)

    Zaoui, K. [University Hospital Heidelberg, Ruprecht Karls University, Department of Otorhinolaryngology, Head and Neck Surgery, Heidelberg (Germany); Kromeier, J. [St. Josefs Hospital, RkK, Department of Radiology, Freiburg (Germany); Neudert, M.; Beleites, T.; Zahnert, T. [University Hospital Dresden, Technical University, Department of Otorhinolaryngology, Head and Neck Surgery, Dresden (Germany); Laszig, R.; Offergeld, C. [University Hospital Freiburg, Albert Ludwigs University, Department of Otorhinolaryngology, Head and Neck Surgery, Freiburg (Germany)

    2014-03-15

    After middle ear reconstruction using partial or total ossicular replacement prostheses (PORP/TORP), an air-bone gap (ABG) may persist because of prosthesis displacement or malposition. So far, CT of the temporal bone has played the main role in the diagnosis of reasons for postoperative insufficient ABG improvement. Recent experimental and clinical studies have evaluated flat panel CT (fpCT) as an alternative imaging technique that provides images with high isovolumetric resolution, fewer metal-induced artefacts and lower irradiation doses. One hundred and seven consecutive patients with chronic otitis media with or without cholesteatoma underwent reconstruction by PORP (n = 52) or TORP (n = 55). All subjects underwent preoperative and postoperative audiometric testing and postoperative fpCT. Statistical evaluation of all 107 patients as well as the sole sub-assembly groups (PORP or TORP) showed a highly significant correlation between hearing improvement and fpCT-determined prosthesis position. FpCT enables detailed postoperative information on patients with middle ear reconstruction. FpCT is a new imaging technique that provides immediate feedback on surgical results after reconstructive middle ear surgery. Specific parameters evaluated by fpCT may serve as a predictive tool for estimated postoperative hearing improvement. Therefore this imaging technique is suitable for postoperative quality control in reconstructive middle ear surgery. (orig.)

  20. Dynamic chest radiography: flat-panel detector (FPD) based functional X-ray imaging.

    Science.gov (United States)

    Tanaka, Rie

    2016-07-01

    Dynamic chest radiography is a flat-panel detector (FPD)-based functional X-ray imaging, which is performed as an additional examination in chest radiography. The large field of view (FOV) of FPDs permits real-time observation of the entire lungs and simultaneous right-and-left evaluation of diaphragm kinetics. Most importantly, dynamic chest radiography provides pulmonary ventilation and circulation findings as slight changes in pixel value even without the use of contrast media; the interpretation is challenging and crucial for a better understanding of pulmonary function. The basic concept was proposed in the 1980s; however, it was not realized until the 2010s because of technical limitations. Dynamic FPDs and advanced digital image processing played a key role for clinical application of dynamic chest radiography. Pulmonary ventilation and circulation can be quantified and visualized for the diagnosis of pulmonary diseases. Dynamic chest radiography can be deployed as a simple and rapid means of functional imaging in both routine and emergency medicine. Here, we focus on the evaluation of pulmonary ventilation and circulation. This review article describes the basic mechanism of imaging findings according to pulmonary/circulation physiology, followed by imaging procedures, analysis method, and diagnostic performance of dynamic chest radiography. PMID:27294264

  1. Ultra-high resolution flat-panel volume CT: fundamental principles, design architecture, and system characterization

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Rajiv; Brady, Tom [Massachusetts General Hospital, Department of Radiology, Founders House, FND-2-216, Boston, MA (United States); Grasruck, Michael; Suess, Christoph; Schmidt, Bernhard; Stierstorfer, Karl; Popescu, Stefan; Flohr, Thomas [Siemens Medical Solutions, Forchheim (Germany); Bartling, Soenke H. [Hannover Medical School, Department of Neuroradiology, Hannover (Germany)

    2006-06-15

    Digital flat-panel-based volume CT (VCT) represents a unique design capable of ultra-high spatial resolution, direct volumetric imaging, and dynamic CT scanning. This innovation, when fully developed, has the promise of opening a unique window on human anatomy and physiology. For example, the volumetric coverage offered by this technology enables us to observe the perfusion of an entire organ, such as the brain, liver, or kidney, tomographically (e.g., after a transplant or ischemic event). By virtue of its higher resolution, one can directly visualize the trabecular structure of bone. This paper describes the basic design architecture of VCT. Three key technical challenges, viz., scatter correction, dynamic range extension, and temporal resolution improvement, must be addressed for successful implementation of a VCT scanner. How these issues are solved in a VCT prototype and the modifications necessary to enable ultra-high resolution volumetric scanning are described. The fundamental principles of scatter correction and dose reduction are illustrated with the help of an actual prototype. The image quality metrics of this prototype are characterized and compared with a multi-detector CT (MDCT). (orig.)

  2. Flat panel CT following stapes prosthesis insertion: an experimental and clinical study

    Energy Technology Data Exchange (ETDEWEB)

    Zaoui, K. [University-Hospital Heidelberg, Ludwig-Karls-University Heidelberg, Department of Otorhinolaryngology, Head and Neck Surgery, Heidelberg (Germany); Kromeier, J. [St.-Josefs-Hospital, RkK, Department of Radiology, Freiburg (Germany); Neudert, M.; Zahnert, T. [University-Hospital Dresden, Technical-University Dresden, Department of Otorhinolaryngology, Head and Neck Surgery, Dresden (Germany); Boedeker, C.C.; Laszig, R.; Offergeld, C. [University-Hospital Freiburg, Albert-Ludwigs-University Freiburg, Department of Otorhinolaryngology, Head and Neck Surgery, Freiburg (Germany)

    2012-04-15

    Anatomical information of the middle and inner ear is becoming increasingly important in post-operative evaluation especially after stapesplasty with unsuccessful improvement of the air-bone gap (ABG). So far computed tomography (CT) has been the first choice for detection of reasons for recurrent hearing loss. CT has the disadvantage of metal-induced artefacts after insertion of middle ear implants and of a relatively high irradiation dose. Flat panel CT (fpCT) was performed in three temporal bone specimen after experimental insertion of different stapes prostheses, aiming to validate the accuracy of fpCT of the middle and inner ear. Additionally, 28 consecutive patients, supplied with different stapes prostheses underwent post-operative fpCT to compare the pre- and post-operative hearing results with the determined prosthesis position in the middle and inner ear. In all cases, fpCT showed a statistically significant correlation between hearing improvement and prosthesis position. This technique provided detailed post-operative information of the implant position in patients and temporal bone specimen. The new imaging technique of fpCT allows the immediate and almost artefact-free evaluation of surgical results following stapesplasty. Further benefits are a lower irradiation dose and higher isovolumetric resolution compared with standard CT. (orig.)

  3. Thermal Reactor Model for Large-Scale Algae Cultivation in Vertical Flat Panel Photobioreactors.

    Science.gov (United States)

    Endres, Christian H; Roth, Arne; Brück, Thomas B

    2016-04-01

    Microalgae can grow significantly faster than terrestrial plants and are a promising feedstock for sustainable value added products encompassing pharmaceuticals, pigments, proteins and most prominently biofuels. As the biomass productivity of microalgae strongly depends on the cultivation temperature, detailed information on the reactor temperature as a function of time and geographical location is essential to evaluate the true potential of microalgae as an industrial feedstock. In the present study, a temperature model for an array of vertical flat plate photobioreactors is presented. It was demonstrated that mutual shading of reactor panels has a decisive effect on the reactor temperature. By optimizing distance and thickness of the panels, the occurrence of extreme temperatures and the amplitude of daily temperature fluctuations in the culture medium can be drastically reduced, while maintaining a high level of irradiation on the panels. The presented model was developed and applied to analyze the suitability of various climate zones for algae production in flat panel photobioreactors. Our results demonstrate that in particular Mediterranean and tropical climates represent favorable locations. Lastly, the thermal energy demand required for the case of active temperature control is determined for several locations. PMID:26950078

  4. Flat panel CT following stapes prosthesis insertion: an experimental and clinical study

    International Nuclear Information System (INIS)

    Anatomical information of the middle and inner ear is becoming increasingly important in post-operative evaluation especially after stapesplasty with unsuccessful improvement of the air-bone gap (ABG). So far computed tomography (CT) has been the first choice for detection of reasons for recurrent hearing loss. CT has the disadvantage of metal-induced artefacts after insertion of middle ear implants and of a relatively high irradiation dose. Flat panel CT (fpCT) was performed in three temporal bone specimen after experimental insertion of different stapes prostheses, aiming to validate the accuracy of fpCT of the middle and inner ear. Additionally, 28 consecutive patients, supplied with different stapes prostheses underwent post-operative fpCT to compare the pre- and post-operative hearing results with the determined prosthesis position in the middle and inner ear. In all cases, fpCT showed a statistically significant correlation between hearing improvement and prosthesis position. This technique provided detailed post-operative information of the implant position in patients and temporal bone specimen. The new imaging technique of fpCT allows the immediate and almost artefact-free evaluation of surgical results following stapesplasty. Further benefits are a lower irradiation dose and higher isovolumetric resolution compared with standard CT. (orig.)

  5. Point spread function modeling method for x-ray flat panel detector imaging

    Science.gov (United States)

    Zhang, Hua; Shi, Yikai; Huang, Kuidong; Yu, Qingchao

    2012-10-01

    Flat panel detector (FPD) has been widely used as the imaging unit in the current X-ray digital radiography (DR) systems and Computed Tomography (CT) systems. Point spread function (PSF) is an important indicator of the FPD imaging system, but also the basis for image restoration. For the problem of poor accuracy of the FPD's PSF measurement with the original pinhole imaging for DR systems, a new PSF measuring method with the pinhole imaging based on the image restoration is proposed in this paper. Firstly, some images collected with the pinhole imaging are averaged to one image to reducing the noise. Then, the original pinhole image is calculated according to the energy conservation principle of point spread. Finally, the PSF of the FPD is obtained using the operation of image restoration. On this basis, through the fitting of the characteristic parameters of the PSF on different scan conditions, the computational model of the PSF is established for any scan conditions. Experimental results show that the method can obtain a more accurate PSF of the FPD, and the PSF of the same system under any scan conditions can be directly calculated with the PSF model.

  6. Potential Applications of Flat-Panel Volumetric CT in Morphologic, Functional Small Animal Imaging

    Directory of Open Access Journals (Sweden)

    Susanne Greschus

    2005-08-01

    Full Text Available Noninvasive radiologic imaging has recently gained considerable interest in basic, preclinical research for monitoring disease progression, therapeutic efficacy. In this report, we introduce flat-panel volumetric computed tomography (fpVCT as a powerful new tool for noninvasive imaging of different organ systems in preclinical research. The three-dimensional visualization that is achieved by isotropic high-resolution datasets is illustrated for the skeleton, chest, abdominal organs, brain of mice. The high image quality of chest scans enables the visualization of small lung nodules in an orthotopic lung cancer model, the reliable imaging of therapy side effects such as lung fibrosis. Using contrast-enhanced scans, fpVCT displayed the vascular trees of the brain, liver, kidney down to the subsegmental level. Functional application of fpVCT in dynamic contrast-enhanced scans of the rat brain delivered physiologically reliable data of perfusion, tissue blood volume. Beyond scanning of small animal models as demonstrated here, fpVCT provides the ability to image animals up to the size of primates.

  7. Planar cone-beam computed tomography with a flat-panel detector

    Science.gov (United States)

    Kim, S. H.; Kim, D. W.; Youn, H.; Kim, D.; Kam, S.; Jeon, H.; Kim, H. K.

    2015-12-01

    For a dedicated x-ray inspection of printed-circuit boards (PCBs), a bench-top planar cone-beam computed tomography (pCT) system with a flat-panel detector has been built in the laboratory. The system adopts the tomosynthesis technique that can produce cross-sectional images parallel to the axis of rotation for a limited angular range. For the optimal operation of the system and further improvement in the next design, we have evaluated imaging performances, such as modulation-transfer function, noise-power spectrum, and noise-equivalent number of quanta. The performances are comparatively evaluated with the coventional cone-beam CT (CBCT) acquisition for various scanning angular ranges, applied tube voltages, and geometrical magnification factors. The pCT scan shows a poorer noise performance than the conventional CBCT scan because of less number of projection views used for reconstruction. However, the pCT shows a better spatial-resolution performance than the CBCT. Because the image noise can be compensated by an elevated exposure level during scanning, the pCT can be a useful modality for the PCB inspection that requires higher spatial-resolution performance.

  8. A compact high resolution flat panel PET detector based on the new 4-side buttable MPPC for biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qiang, E-mail: wangqiang@mir.wustl.edu [Washington University in St Louis, MO 63110 (United States); Wen, Jie; Ravindranath, Bosky; O' Sullivan, Andrew W. [Washington University in St Louis, MO 63110 (United States); Catherall, David [Saint Louis University, St. Louis, MO 63103 (United States); Li, Ke; Wei, Shouyi; Komarov, Sergey [Washington University in St Louis, MO 63110 (United States); Tai, Yuan-Chuan, E-mail: taiy@mir.wustl.edu [Washington University in St Louis, MO 63110 (United States)

    2015-09-11

    Compact high-resolution panel detectors using virtual pinhole (VP) PET geometry can be inserted into existing clinical or pre-clinical PET systems to improve regional spatial resolution and sensitivity. Here we describe a compact panel PET detector built using the new Though Silicon Via (TSV) multi-pixel photon counters (MPPC) detector. This insert provides high spatial resolution and good timing performance for multiple bio-medical applications. Because the TSV MPPC design eliminates wire bonding and has a package dimension which is very close to the MPPC's active area, it is 4-side buttable. The custom designed MPPC array (based on Hamamatsu S12641-PA-50(x)) used in the prototype is composed of 4×4 TSV-MPPC cells with a 4.46 mm pitch in both directions. The detector module has 16×16 lutetium yttrium oxyorthosilicate (LYSO) crystal array, with each crystal measuring 0.92×0.92×3 mm{sup 3} with 1.0 mm pitch. The outer diameter of the detector block is 16.8×16.8 mm{sup 2}. Thirty-two such blocks will be arranged in a 4×8 array with 1 mm gaps to form a panel detector with detection area around 7 cm×14 cm in the full-size detector. The flood histogram acquired with {sup 68}Ge source showed excellent crystal separation capability with all 256 crystals clearly resolved. The detector module's mean, standard deviation, minimum (best) and maximum (worst) energy resolution were 10.19%, ±0.68%, 8.36% and 13.45% FWHM, respectively. The measured coincidence time resolution between the block detector and a fast reference detector (around 200 ps single photon timing resolution) was 0.95 ns. When tested with Siemens Cardinal electronics the performance of the detector blocks remain consistent. These results demonstrate that the TSV-MPPC is a promising photon sensor for use in a flat panel PET insert composed of many high resolution compact detector modules.

  9. A compact high resolution flat panel PET detector based on the new 4-side buttable MPPC for biomedical applications

    Science.gov (United States)

    Wang, Qiang; Wen, Jie; Ravindranath, Bosky; O’Sullivan, Andrew W.; Catherall, David; Li, Ke; Wei, Shouyi; Komarov, Sergey; Tai, Yuan-Chuan

    2015-01-01

    Compact high-resolution panel detectors using virtual pinhole (VP) PET geometry can be inserted into existing clinical or pre-clinical PET systems to improve regional spatial resolution and sensitivity. Here we describe a compact panel PET detector built using the new Though Silicon Via (TSV) multi-pixel photon counters (MPPC) detector. This insert provides high spatial resolution and good timing performance for multiple bio-medical applications. Because the TSV MPPC design eliminates wire bonding and has a package dimension which is very close to the MPPC’s active area, it is 4-side buttable. The custom designed MPPC array (based on Hamamatsu S12641-PA-50(x)) used in the prototype is composed of 4 × 4 TSV-MPPC cells with a 4.46 mm pitch in both directions. The detector module has 16 × 16 lutetium yttrium oxyorthosilicate (LYSO) crystal array, with each crystal measuring 0.92 × 0.92 × 3 mm3 with 1.0 mm pitch. The outer diameter of the detector block is 16.8 × 16.8 mm2. Thirty-two such blocks will be arranged in a 4 × 8 array with 1 mm gaps to form a panel detector with detection area around 7 cm × 14 cm in the full-size detector. The flood histogram acquired with Ge-68 source showed excellent crystal separation capability with all 256 crystals clearly resolved. The detector module’s mean, standard deviation, minimum (best) and maximum (worst) energy resolution were 10.19%, +/−0.68%, 8.36% and 13.45% FWHM, respectively. The measured coincidence time resolution between the block detector and a fast reference detector (around 200 ps single photon timing resolution) was 0.95 ns. When tested with Siemens Cardinal electronics the performance of the detector blocks remain consistent. These results demonstrate that the TSV-MPPC is a promising photon sensor for use in a flat panel PET insert composed of many high resolution compact detector modules. PMID:26085702

  10. Programmable SERS active substrates for chemical and biosensing applications using amorphous/crystalline hybrid silicon nanomaterial

    Science.gov (United States)

    Powell, Jeffery Alexander; Venkatakrishnan, Krishnan; Tan, Bo

    2016-01-01

    We present the creation of a unique nanostructured amorphous/crystalline hybrid silicon material that exhibits surface enhanced Raman scattering (SERS) activity. This nanomaterial is an interconnected network of amorphous/crystalline nanospheroids which form a nanoweb structure; to our knowledge this material has not been previously observed nor has it been applied for use as a SERS sensing material. This material is formed using a femtosecond synthesis technique which facilitates a laser plume ion condensation formation mechanism. By fine-tuning the laser plume temperature and ion interaction mechanisms within the plume, we are able to precisely program the relative proportion of crystalline Si to amorphous Si content in the nanospheroids as well as the size distribution of individual nanospheroids and the size of Raman hotspot nanogaps. With the use of Rhodamine 6G (R6G) and Crystal Violet (CV) chemical dyes, we have been able to observe a maximum enhancement factor of 5.38 × 106 and 3.72 × 106 respectively, for the hybrid nanomaterial compared to a bulk Si wafer substrate. With the creation of a silicon-based nanomaterial capable of SERS detection of analytes, this work demonstrates a redefinition of the role of nanostructured Si from an inactive to SERS active role in nano-Raman sensing applications.

  11. On the thermodynamically stable amorphous phase of polymer-derived silicon oxycarbide.

    Science.gov (United States)

    Yu, Liping; Raj, Rishi

    2015-01-01

    A model for the thermodynamic stability of amorphous silicon oxycarbide (SiCO) is presented. It builds upon the reasonably accepted model of SiCO which is conceived as a nanodomain network of graphene. The domains are expected to be filled with SiO2 molecules, while the interface with graphene is visualized to contain mixed bonds described as Si bonded to C as well as to O atoms. Normally these SiCO compositions would be expected to crystallize. Instead, calorimetric measurements have shown that the amorphous phase is thermodynamically stable. In this article we employ first-principles calculations to estimate how the interfacial energy of the graphene networks is favorably influenced by having mixed bonds attached to them. We analyze the ways in which this reduction in interfacial energy can stabilize the amorphous phase. The approach highlights how density functional theory computations can be combined with the classical analysis of phase transformations to explain the behavior of a complex material. In addition we discover a two-dimensional lattice structure, with the composition Si2C4O3 that is constructed from a single layer of graphene congruent with silicon and oxygen bonds on either side. PMID:26419962

  12. Low-mobility solar cells: a device physics primer with application to amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Schiff, E.A. [Syracuse University, New York (United States). Department of Physics

    2003-07-01

    The properties of pin solar cells based on photogeneration of charge carriers into low-mobility materials were calculated for two models. Ideal p- and n-type electrode layers were assumed in both cases. The first, elementary case involves only band mobilities and direct electron-hole recombination. An analytical approximation indicates that the power in thick cells rises as the 1/4 power of the lower band mobility, which reflects the buildup of space-charge under illumination. The approximation agrees well with computer simulation. The second model includes exponential bandtail trapping, which is commonly invoked to account for very low hole drift mobilities in amorphous silicon and other amorphous semiconductors. The two models have similar qualitative behavior. Predictions for the solar conversion efficiency of amorphous silicon-based cells that are limited by valence bandtail trapping are presented. The predictions account adequately for the efficiencies of present a-Si : H cells in their 'as-prepared' state (without light-soaking), and indicate the improvement that may be expected if hole drift mobilities (and valence bandtail widths) can be improved. (author)

  13. Development of X-ray/gamma-ray imaging system based on hydrogenated amorphous silicon/crystalline silicon heterojunction strip detector

    International Nuclear Information System (INIS)

    A high-energy X-ray/gamma-ray imaging system based on a hydrogenated amorphous silicon (a-Si : H)/crystalline silicon (c-Si) heterojunction strip detector was developed. The imaging system will be applied in nondestructive testing of concrete structures. We fabricated 50-channel heterojunction strip detectors with a 1 mm pitch on 500 μm thick p-type silicon wafers. The average leakage current was 2.9 nA per channel at 120 V reverse bias. Energy resolutions of 2.8 keV FWHM at 59.5 keV and 2.9 keV FWHM at 122 keV were obtained at 18degC. The position sensitivity of the strip detector was measured by edge-on irradiation with a 137Cs gamma-ray source. Edge-on gamma-ray imaging of a tungsten object using the prototype was performed. A module consisting of 20 stacked silicon strip detectors is being constructed. (author)

  14. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics

    Directory of Open Access Journals (Sweden)

    Sandro Rao

    2016-01-01

    Full Text Available Hydrogenated amorphous silicon (a-Si:H shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature.

  15. Electron transport in W-containing amorphous carbon-silicon diamond-like nanocomposites

    International Nuclear Information System (INIS)

    The electron transport in amorphous hydrogenated carbon-silicon diamond-like nanocomposite films containing tungsten over the concentration range 12-40 at.% was studied in the temperature range 80-400 K. The films were deposited onto polycrystalline substrates, placed on the RF-biased substrate holder, by the combination of two methods: PECVD of siloxane vapours in the stimulated dc discharge and dc magnetron sputtering of tungsten target. The experimental dependences of the conductivity on the temperature are well fitted by the power-law dependences over the entire temperature range. The results obtained are discussed in terms of the model of inelastic tunnelling of the electrons in amorphous dielectrics. The average number of localized states (n) in the conducting channels between metal clusters calculated in the framework of this model is characterized by the non-monotonic dependence on the tungsten concentration in the films. The qualitative explanation of the results on the basis of host carbon-silicon matrix structural modifications is proposed. The evolution of the carbon-silicon matrix microstructure by the increase in the tungsten concentration is confirmed by the Raman spectroscopy data

  16. Band offsets at the crystalline / hydrogenated amorphous silicon interface from first-principles

    Science.gov (United States)

    Hazrati, Ebrahim; Jarolimek, Karol; de Wijs, Gilles A.; InstituteMolecules; Materials Team

    2015-03-01

    The heterojunction formed between crystalline silicon (c-Si) and hydrogenated amorphous silicon (a-Si:H) is a key component of a new type of high-efficiency silicon solar cell. Since a-Si:H has a larger band gap than c-Si, band offsets are formed at the interface. A band offset at the minority carrier band will mitigate recombination and lead to an increased efficiency. Experimental values of band offsets scatter in a broad range. However, a recent meta-analysis of the results (W. van Sark et al.pp. 405, Springer 2012) gives a larger valence offset (0.40 eV) than the conduction offset (0.15 eV). In light of the conflicting reports our goal is to calculate the band offsets at the c-Si/a-Si:H interface from first-principles. We have prepared several atomistic models of the interface. The crystalline part is terminated with (111) surfaces on both sides. The amorphous structure is generated by simulating an annealing process at 1100 K, with DFT molecular dynamics. Once the atomistic is ready it can be used to calculate the electronic structure of the interface. Our preliminary results show that the valence offset is larger than the conduction band offset.

  17. Computational Evaluation of Amorphous Carbon Coating for Durable Silicon Anodes for Lithium-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Jeongwoon Hwang

    2015-10-01

    Full Text Available We investigate the structural, mechanical, and electronic properties of graphite-like amorphous carbon coating on bulky silicon to examine whether it can improve the durability of the silicon anodes of lithium-ion batteries using molecular dynamics simulations and ab-initio electronic structure calculations. Structural models of carbon coating are constructed using molecular dynamics simulations of atomic carbon deposition with low incident energies (1–16 eV. As the incident energy decreases, the ratio of sp2 carbons increases, that of sp3 decreases, and the carbon films become more porous. The films prepared with very low incident energy contain lithium-ion conducting channels. Also, those films are electrically conductive to supplement the poor conductivity of silicon and can restore their structure after large deformation to accommodate the volume change during the operations. As a result of this study, we suggest that graphite-like porous carbon coating on silicon will extend the lifetime of the silicon anodes of lithium-ion batteries.

  18. Growth characteristics of amorphous-layer-free nanocrystalline silicon films fabricated by very high frequency PECVD at 250 ℃

    Institute of Scientific and Technical Information of China (English)

    Guo Yan-Qing; Huang Rui; Song Jie; Wang Xiang; Song Chao; Zhang Yi-Xiong

    2012-01-01

    Amorphous-layer-free nanocrystalline silicon films were prepared by a very high frequency plasma enhanced chemical vapor deposition (PECVD) technique using hydrogen-diluted SiH4 at 250 ℃.The dependence of the crystallinity of the film on the hydrogen dilution ratio and the film thickness was investigated.Raman spectra show that the thickness of the initial amorphous incubation layer on silicon oxide gradually decreases with increasing hydrogen dilution ratio.High-resolution transmission electron microscopy reveals that the initial amorphous incubation layer can be completely eliminated at a hydrogen dilution ratio of 98%,which is lower than that needed for the growth of amorphous-layer-free nanocrystalline silicon using an excitation frequency of 13.56 MHz.More studies on the microstructure evolution of the initial amorphous incubation layer with hydrogen dilution ratios were performed using Fourier-transform infrared spectroscopy.It is suggested that the high hydrogen dilution,as well as the higher plasma excitation frequency,plays an important role in the formation of amorphous-layer-free nanocrystalline silicon films.

  19. Standard practice for radiologic examination of flat panel composites and sandwich core materials used in aerospace applications

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2009-01-01

    1.1 This practice is intended to be used as a supplement to Practices E 1742, E 1255, and E 2033. 1.2 This practice describes procedures for radiologic examination of flat panel composites and sandwich core materials made entirely or in part from fiber-reinforced polymer matrix composites. Radiologic examination is: a) radiographic (RT) with film, b) Computed Radiography (CR) with Imaging Plate, c) Digital Radiology (DR) with Digital Detector Array’s (DDA), and d) Radioscopic (RTR) Real Time Radiology with a detection system such as an Image Intensifier. The composite materials under consideration typically contain continuous high modulus fibers (> 20 GPa), such as those listed in 1.4. 1.3 This practice describes established radiological examination methods that are currently used by industry that have demonstrated utility in quality assurance of flat panel composites and sandwich core materials during product process design and optimization, process control, after manufacture inspection, in service exami...

  20. Review of amorphous silicon based particle detectors: the quest for single particle detection

    Science.gov (United States)

    Wyrsch, N.; Ballif, C.

    2016-10-01

    Hydrogenated amorphous silicon (a-Si:H) is attractive for radiation detectors because of its radiation resistance and processability over large areas with mature Si microfabrication techniques. While the use of a-Si:H for medical imaging has been very successful, the development of detectors for particle tracking and minimum-ionizing-particle detection has lagged, with almost no practical implementation. This paper reviews the development of various types of a-Si:H-based detectors and discusses their respective achievements and limitations. It also presents more recent developments of detectors that could potentially achieve single particle detection and be integrated in a monolithic fashion into a variety of applications.

  1. Hydrogenated Amorphous Silicon Sensor Deposited on Integrated Circuit for Radiation Detection

    OpenAIRE

    Despeisse, M; Anelli, G.; Jarron, P.; Kaplon, J; Moraes, D.; A. Nardulli(Institute for Particle Physics, ETH Zurich, Zurich, Switzerland); Powolny, F; Wyrsch, N

    2008-01-01

    Radiation detectors based on the deposition of a 10 to 30 μm thick hydrogenated amorphous silicon (a-Si:H) sensor directly on top of integrated circuits have been developed. The performance of this detector technology has been assessed for the first time in the context of particle detectors. Three different circuits were designed in a quarter micron CMOS technology for these studies. The so-called TFA (Thin-Film on ASIC) detectors obtained after deposition of a-Si:H sensors on the developed c...

  2. Solid-phase Crystallization of Hydrogenated Amorphous Silicon on Glass Substrates

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Amorphous silicon films prepared by PECVD on glass substrate have been crystallized by conventional furnace annealing and rapid thermal annealing(RTA), respectively. From the Raman spectra, X-ray diffraction and scanning electron microscope, it is found that the grain size is crystallized at 850℃ in both techniques. The thin film made by RTA is smooth and of perfect structure, the thin film annealed by FA has a highly structural disorder. An average grain size of about 30nm is obtained by both techniques.

  3. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    International Nuclear Information System (INIS)

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  4. Structural and Dynamic Properties of Amorphous Silicon:Tight-Binding Molecular Dynamics Simulation

    Institute of Scientific and Technical Information of China (English)

    HUANG Shi-Ping; WANG Wen-Chuan

    2004-01-01

    @@ The tight-binding molecular dynamics simulation has been performed to study structural and dynamical properties of amorphous silicon. It is found that the radial distribution function and static structure factor are in good agreement with the experimental measurements. The bond order parameters Ql are sensitive to the structure change at different quenching rates. For the dynamical properties, we have calculated the vibration and electronic density of states. The simulation results show that the transverse acoustic is in good agreement with the experimental data, and the high frequency transverse optical (TO) peak shifts to the right of the experimental TO peak.

  5. The influence of confinements on the photon flux spectra in amorphous silicon quantum dots

    OpenAIRE

    ABDULRIDA, Moafak Cadim; and, Nidhal Moosa ABDUL-AMEER

    2012-01-01

    We have theoretically calculated the photon flux of radiative recombination in amorphous silicon quantum dots (a-SiQDs) at room temperature. These quantum dots have been ranged in their diameter 1 to 4 nm. The convolution of probability density function of deepest energy states of conduction PC(E) and valence PV(E) bands within the capture volume was adopted. The behavior of this function can be classified into four regions according to the quantum dot size. The effect of spatial an...

  6. Nanopatterned front contact for broadband absorption in ultra-thin amorphous silicon solar cells

    OpenAIRE

    Massiot, I.; Colin, Clément; Péré-Laperne, Nicolas; Roca I Cabarrocas, Pere; Sauvan, Christophe; Lalanne, Philippe; Pelouard, Jean-Luc; Collin, Stéphane

    2012-01-01

    International audience Broadband light trapping is numerically demonstrated in ultra-thin solar cells composed of a flat amorphous silicon absorber layer deposited on a silver mirror. A one-dimensional silver array is used to enhance light absorption in the visible spectral range with low polarization and angle dependencies. In addition, the metallic nanowires play the role of transparent electrodes. We predict a short-circuit current density of 14:6mA=cm2 for a solar cell with a 90 nm-thi...

  7. Elastic measurements of TLSs in amorphous silicon at mK temperatures

    Science.gov (United States)

    Fefferman, Andrew; Liu, Xiao; Metcalf, Thomas; Jernigan, Glenn; Collin, Eddy

    The low temperature properties of glass are distinct from those of crystals due to the presence of poorly understood low-energy excitations. These are usually thought to be atoms tunneling between nearby equilibria, forming tunneling two level systems (TLSs). Elastic measurements on amorphous silicon films deposited with e-beam evaporation showed that this material contains a variable density of TLSs that decreases as the growth temperature increases from 45 to 400 deg C. We will present an analysis of the elastic properties of these films down to the low mK range in the framework of the standard tunneling model

  8. On the thermodynamically stable amorphous phase of polymer-derived silicon oxycarbide

    OpenAIRE

    Liping Yu; Rishi Raj

    2015-01-01

    A model for the thermodynamic stability of amorphous silicon oxycarbide (SiCO) is presented. It builds upon the reasonably accepted model of SiCO which is conceived as a nanodomain network of graphene. The domains are expected to be filled with SiO2 molecules, while the interface with graphene is visualized to contain mixed bonds described as Si bonded to C as well as to O atoms. Normally these SiCO compositions would be expected to crystallize. Instead, calorimetric measurements have shown t...

  9. Hydrogen reverses the clustering tendency of carbon in amorphous silicon oxycarbide

    OpenAIRE

    Hepeng Ding; Demkowicz, Michael J.

    2015-01-01

    Amorphous silicon oxycarbide (SiOC) is of great technological interest. However, its atomic-level structure is not well understood. Using density functional theory calculations, we show that the clustering tendency of C atoms in SiOC is extremely sensitive to hydrogen (H): without H, the C-C interaction is attractive, leading to enrichment of aggregated SiC[subscript 4] tetrahedral units; with hydrogen, the C-C interaction is repulsive, leading to enrichment of randomly distributed SiCO[subsc...

  10. Hydrogen-induced rupture of strained Si─O bonds in amorphous silicon dioxide

    OpenAIRE

    El-Sayed, Al-Moatasem; Watkins, Matthew B.; Grasser, Tibor; Afanas'ev, Valery; Shluger, Alexander L

    2015-01-01

    Using ab initio modeling we demonstrate that H atoms can break strained Si─O bonds in continuous amorphous silicon dioxide (a-SiO(2)) networks, resulting in a new defect consisting of a threefold-coordinated Si atom with an unpaired electron facing a hydroxyl group, adding to the density of dangling bond defects, such as E' centers. The energy barriers to form this defect from interstitial H atoms range between 0.5 and 1.3 eV. This discovery of unexpected reactivity of atomic hydrogen may hav...

  11. Large-size high-performance transparent amorphous silicon sensors for laser beam position detection

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Martinez-Rivero, C. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Matorras, F. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Rodrigo, T. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Sobron, M. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Vila, I. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Virto, A.L. [Instituto de Fisica de Cantabria. CSIC-University of Cantabria, Santander (Spain); Alberdi, J. [CIEMAT, Madrid (Spain); Arce, P. [CIEMAT, Madrid (Spain); Barcala, J.M. [CIEMAT, Madrid (Spain); Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A. [CIEMAT, Madrid (Spain)]. E-mail: antonio.ferrando@ciemat.es; Josa, M.I. [CIEMAT, Madrid (Spain); Luque, J.M. [CIEMAT, Madrid (Spain); Molinero, A. [CIEMAT, Madrid (Spain); Navarrete, J. [CIEMAT, Madrid (Spain); Oller, J.C. [CIEMAT, Madrid (Spain); Yuste, C. [CIEMAT, Madrid (Spain); Koehler, C. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Lutz, B. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Schubert, M.B. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Werner, J.H. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany)

    2006-09-15

    We present the measured performance of a new generation of semitransparent amorphous silicon position detectors. They have a large sensitive area (30x30mm{sup 2}) and show good properties such as a high response (about 20mA/W), an intrinsic position resolution better than 3{mu}m, a spatial-point reconstruction precision better than 10{mu}m, deflection angles smaller than 10{mu}rad and a transmission power in the visible and NIR higher than 70%.

  12. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

    2006-09-04

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  13. Novel photochemical vapor deposition reactor for amorphous silicon solar cell deposition

    Science.gov (United States)

    Rocheleau, Richard E.; Hegedus, Steven S.; Buchanan, Wayne A.; Jackson, Scott C.

    1987-07-01

    A novel photochemical vapor deposition (photo-CVD) reactor having a flexible ultraviolet-transparent Teflon curtain and a secondary gas flow to eliminate deposition on the window has been used to deposit amorphous silicon films and p-i-n solar cells. The background levels of atmospheric contaminants (H2O, CO2, N2) depend strongly on the vacuum procedures but not on the presence of a Teflon curtain in the reactor. Intrinsic films with a midgap density of states of 3×1015 eV-1 cm-3 and all-photo-CVD pin solar cells with efficiencies of 8.5% have been deposited.

  14. A flat-panel detector based micro-CT system: performance evaluation for small-animal imaging.

    Science.gov (United States)

    Lee, Sang Chul; Kim, Ho Kyung; Chun, In Kon; Cho, Myung Hye; Lee, Soo Yeol; Cho, Min Hyoung

    2003-12-21

    A dedicated small-animal x-ray micro computed tomography (micro-CT) system has been developed to screen laboratory small animals such as mice and rats. The micro-CT system consists of an indirect-detection flat-panel x-ray detector with a field-of-view of 120 x 120 mm2, a microfocus x-ray source, a rotational subject holder and a parallel data processing system. The flat-panel detector is based on a matrix-addressed photodiode array fabricated by a CMOS (complementary metal-oxide semiconductor) process coupled to a CsI:T1 (thallium-doped caesium iodide) scintillator as an x-ray-to-light converter. Principal imaging performances of the micro-CT system have been evaluated in terms of image uniformity, voxel noise and spatial resolution. It has been found that the image non-uniformity mainly comes from the structural non-uniform sensitivity pattern of the flat-panel detector and the voxel noise is about 48 CT numbers at the voxel size of 100 x 100 x 200 microm3 and the air kerma of 286 mGy. When the magnification ratio is 2, the spatial resolution of the micro-CT system is about 14 1p/mm (line pairs per millimetre) that is almost determined by the flat-panel detector showing about 7 1p/mm resolving power. Through low-contrast phantom imaging studies, the minimum resolvable contrast has been found to be less than 36 CT numbers at the air kerma of 95 mGy. Some laboratory rat imaging results are presented. PMID:14727760

  15. Semi-Automatic Classification of Skeletal Morphology in Genetically Altered Mice Using Flat-Panel Volume Computed Tomography

    OpenAIRE

    Christian Dullin; Jeannine Missbach-Guentner; Vogel, Wolfgang F.; Eckhardt Grabbe; Frauke Alves

    2007-01-01

    Rapid progress in exploring the human and mouse genome has resulted in the generation of a multitude of mouse models to study gene functions in their biological context. However, effective screening methods that allow rapid noninvasive phenotyping of transgenic and knockout mice are still lacking. To identify murine models with bone alterations in vivo, we used flat-panel volume computed tomography (fpVCT) for high-resolution 3-D imaging and developed an algorithm with a computational intelli...

  16. Application of flat panel OLED display technology for the point-of-care detection of circulating cancer biomarkers

    OpenAIRE

    Katchman, Benjamin A; Smith, Joseph T.; Uwadiae Obahiagbon; Sailaja Kesiraju; Yong-Kyun Lee; Barry O’Brien; Korhan Kaftanoglu; Jennifer Blain Christen; Anderson, Karen S.

    2016-01-01

    Point-of-care molecular diagnostics can provide efficient and cost-effective medical care, and they have the potential to fundamentally change our approach to global health. However, most existing approaches are not scalable to include multiple biomarkers. As a solution, we have combined commercial flat panel OLED display technology with protein microarray technology to enable high-density fluorescent, programmable, multiplexed biorecognition in a compact and disposable configuration with cli...

  17. Experimental evaluation of a-Se and CdTe flat-panel x-ray detectors for digital radiography and fluoroscopy

    Science.gov (United States)

    Adachi, Susumu; Hori, Naoyuki; Sato, Kenji; Tokuda, Satoshi; Sato, Toshiyuki; Uehara, Kazuhiro; Izumi, Yoshihiro; Nagata, Hisashi; Yoshimura, Youji; Yamada, Satoshi

    2000-04-01

    Described are two types of direct-detection flat-panel X-ray detectors utilizing amorphous selenium (a-Se) and cadmium telluride (CdTe). The a-Se detector is fabricated using direct deposition onto a thin film transistor (TFT) substrate, whereas the CdTe detector is fabricated using a novel hybrid method, in which CdTe is pre-deposited onto a glass substrate and then connected to a TFT substrate. The detector array format is 512 X 512 with a pixel pitch of 150 micrometer. The imaging properties of both detectors have been evaluated with respect to X-ray sensitivity, lag, spatial resolution, and detective quantum efficiency (DQE). The modulation transfer functions (MTFs) measured at 1 lp/mm were 0.96 for a- Se and 0.65 for CdTe. The imaging lags after 33 ms were about 4% for a-Se and 22% for CdTe. The DQE values measured at zero spatial frequency were 0.75 for a-Se and 0.22 for CdTe. The results indicate that the a-Se and CdTe detectors have high potential as new digital X-ray imaging devices for both radiography and fluoroscopy.

  18. CAS 132-2006 Standard for Flat Panel Display TV Set Installation Service Formulating and Enforcing Main Point Explanation and Analysis

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    @@ CAS 132-2006 formulation background and work courses Flat panel display technology is maturing alongside the development of science and technology. The prices of flat panel display TV sets are becoming lower and lower. Flat panel display TV sets have begun entering the mainstream and are now the first choice of some consumers when making new TV purchases.Display TV Set Installation Service Point Explanation and AnalysisRepair, Retreat and Change Duty Stipulations. Peculiar use conditions, usage environments, and the practical circumstances of user consumption service requirements, etc., were also taken into account on the basis of extensive investigation, testing, and verification.

  19. Cone Beam Breast CT with a Flat Panel Detector- Simulation, Implementation and Demonstration.

    Science.gov (United States)

    Shaw, Chris; Chen, Lingyun; Altunbas, Mastafa; Tu, Shuju; Wang, Tian-Peng; Lai, Chao-Jen; Cheenu Kappadath, S; Meng, Yang; Liu, Xinming

    2005-01-01

    This paper describes our experiences in the simulation, implementation and application of a flat panel detector based cone beam computed tomography (CT) imaging system for dedicated 3-D breast imaging. In our simulation study, the breast was analytically modeled as a cylinder of breast tissue loosely molded into cylindrical shape with embedded soft tissue masses and calcifications. Attenuation coefficients for various types of breast tissue, soft tissue masses and calcifications were estimated for various kVp's to generate simulated image signals. Projection images were computed to incorporate x-ray attenuation, geometric magnification, x-ray detection, detector blurring, image pixelization and digitization. Based on the x-ray kVp/filtration used, transmittance through the phantom, detective quantum efficiency (DQE), exposure level, and imaging geometry, the photon fluence was estimated and used to compute the quantum noise level on a pixel-by-pixel basis for various dose levels at the isocenter. This estimated noise level was then used with a random number generator to generate and add a fluctuation component to the noiseless transmitted image signal. The noise carrying projection images were then convolved with a Gaussian-like kernel, computed from measured 1-D line spread function (LSF) to simulate detector blurring. Additional 2-D Gaussian filtering was applied to the projection images and tested for improving the detection of soft tissue masses and calcifications in the reconstructed images. Reconstruction was performed using the Feldkamp filtered backprojection algorithm. All simulations were performed on a 24 PC (2.4 GHz Dual-Xeon CPU) cluster with MPI parallel programming. PMID:17281227

  20. Assessment of the CO2 fixation capacity of Anabaena sp. ATCC 33047 outdoor cultures in vertical flat-panel reactors.

    Science.gov (United States)

    Clares, Marta E; Moreno, José; Guerrero, Miguel G; García-González, Mercedes

    2014-10-10

    The extent of biological CO2 fixation was evaluated for outdoor cultures of the cyanobacterium Anabaena sp. ATCC 33047. Culture conditions were optimized indoors in bubble-column photochemostats operating in continuous mode, subjected to irradiance cycles mimicking the light regime outdoors. Highest values achieved for CO2 fixation rate and biomass productivity were 1 and 0.6 g L(-1) day(-1), respectively. The comparison among different reactors operating simultaneously - open pond, horizontal tubular reactor and vertical flat-panel - allowed to assess their relative efficiency for the outdoor development of Anabaena cultures. Despite the higher volumetric CO2 fixation capacity (and biomass productivity) exhibited by the tubular photobioreactor, yield of the flat-panel reactor was 50% higher than that of the tubular option on a per area basis, reaching values over 35 g CO2 fixed m(-2) d(-1). The flat-panel reactor actually represents a most suitable system for CO2 capture coupled to the generation of valuable biomass by Anabaena cultures.

  1. High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hyoung-Rae; Park, Jea-Gun [Hanyang University, Seoul (Korea, Republic of)

    2014-10-15

    We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (V{sub th}) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO{sub x} distributed on the a-IGZO surface reduced the adsorption and the desorption of H{sub 2}O and O{sub 2}. This process is applicable to the TFT manufacturing process with a variable sputtering target.

  2. Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride

    Directory of Open Access Journals (Sweden)

    Buiculescu Raluca

    2011-01-01

    Full Text Available Abstract The electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride is studied by measuring the voltage and temperature dependences of the current. The microstructure of the network is investigated by cross-sectional transmission electron microscopy. The multi-walled carbon nanotube network has an uniform spatial extension in the silicon nitride matrix. The current-voltage and resistance-temperature characteristics are both linear, proving the metallic behavior of the network. The I-V curves present oscillations that are further analyzed by computing the conductance-voltage characteristics. The conductance presents minima and maxima that appear at the same voltage for both bias polarities, at both 20 and 298 K, and that are not periodic. These oscillations are interpreted as due to percolation processes. The voltage percolation thresholds are identified with the conductance minima.

  3. Hydex Glass and Amorphous Silicon for Integrated Nonlinear Optical Signal Processing

    CERN Document Server

    Morandotti, Roberto

    2015-01-01

    Photonic integrated circuits that exploit nonlinear optics in order to generate and process signals all-optically have achieved performance far superior to that possible electronically - particularly with respect to speed. Although silicon-on-insulator has been the leading platform for nonlinear optics for some time, its high two-photon absorption at telecommunications wavelengths poses a fundamental limitation. We review the recent achievements based in new CMOS-compatible platforms that are better suited than SOI for nonlinear optics, focusing on amorphous silicon and Hydex glass. We highlight their potential as well as the challenges to achieving practical solutions for many key applications. These material systems have opened up many new capabilities such as on-chip optical frequency comb generation and ultrafast optical pulse generation and measurement.

  4. Solid phase epitaxy amorphous silicon re-growth: some insight from empirical molecular dynamics simulation

    CERN Document Server

    Krzeminski, Christophe; 10.1140/epjb/e2011-10958-7

    2011-01-01

    The modelling of interface migration and the associated diffusion mechanisms at the nanoscale level is a challenging issue. For many technological applications ranging from nanoelectronic devices to solar cells, more knowledge of the mechanisms governing the migration of the silicon amorphous/crystalline interface and dopant diffusion during solid phase epitaxy is needed. In this work, silicon recrystallisation in the framework of solid phase epitaxy and the influence on orientation effects have been investigated at the atomic level using empirical molecular dynamics simulations. The morphology and the migration process of the interface has been observed to be highly dependent on the original inter-facial atomic structure. The [100] interface migration is a quasi-planar ideal process whereas the cases [110] and [111] are much more complex with a more diffuse interface. For [110], the interface migration corresponds to the formation and dissolution of nanofacets whereas for [111] a defective based bilayer reor...

  5. Effect of Additives on the Sintering of Amorphous Nano-sized Silicon Nitride Powders

    Institute of Scientific and Technical Information of China (English)

    LUO Junting; LIU Riping

    2009-01-01

    Amorphous nano-sized silicon nitride powders were sintered by liquid phase sin-tering.The influences of the additives of Y_2O_3 and Al_2O_3 prepared by two different ways,the poly-acrylamide gel method and the precipitation method,were investigated.The grain sizes of the additives prepared by the first method were finer than those of prepared by the latter method.When sintered at the same temperature,1700℃,the average grain size of the silicon nitride is 0.3 μm for the sample with the former additives,which is much finer than the one with the latter additives.The density of additives prepared by precipitation method is clearly lower than those of prepared by polyacrylamide gel method.

  6. Spin transport, magnetoresistance, and electrically detected magnetic resonance in amorphous hydrogenated silicon nitride

    Science.gov (United States)

    Mutch, Michael J.; Lenahan, Patrick M.; King, Sean W.

    2016-08-01

    We report on a study of spin transport via electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (MR) in silicon nitride films. Silicon nitrides have long been important materials in solid state electronics. Although electronic transport in these materials is not well understood, electron paramagnetic resonance studies have identified a single dominating paramagnetic defect and have also provided physical and chemical descriptions of the defects, called K centers. Our EDMR and MR measurements clearly link the near-zero field MR response to the K centers and also indicate that K center energy levels are approximately 3.1 eV above the a-SiN:H valence band edge. In addition, our results suggest an approach for the study of defect mediated spin-transport in inorganic amorphous insulators via variable electric field and variable frequency EDMR and MR which may be widely applicable.

  7. Study of the amorphization of surface silicon layers implanted by low-energy helium ions

    Science.gov (United States)

    Lomov, A. A.; Myakon'kikh, A. V.; Oreshko, A. P.; Shemukhin, A. A.

    2016-03-01

    The structural changes in surface layers of Si(001) substrates subjected to plasma-immersion implantation by (2-5)-keV helium ions to a dose of D = 6 × 1015-5 × 1017 cm-2 have been studied by highresolution X-ray diffraction, Rutherford backscattering, and spectral ellipsometry. It is found that the joint application of these methods makes it possible to determine the density depth distribution ρ( z) in an implanted layer, its phase state, and elemental composition. Treatment of silicon substrates in helium plasma to doses of 6 × 1016 cm-2 leads to the formation of a 20- to 30-nm-thick amorphized surface layer with a density close to the silicon density. An increase in the helium dose causes the formation of an internal porous layer.

  8. Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications.

    Science.gov (United States)

    García, Héctor; Castán, Helena; Dueñas, Salvador; Bailón, Luis; García-Hernansanz, Rodrigo; Olea, Javier; Del Prado, Álvaro; Mártil, Ignacio

    2016-12-01

    A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100-150 °C) might be the best choice. PMID:27423876

  9. Enhanced amorphous silicon technology for 320 x 240 microbolometer arrays with a pitch of 35 μm

    Science.gov (United States)

    Mottin, Eric; Martin, Jean-Luc; Ouvrier-Buffet, Jean-Louis; Vilain, Michel; Bain, Astrid; Yon, Jean-Jacques; Tissot, Jean-Luc; Chatard, Jean-Pierre

    2001-10-01

    LETI LIR has been involved in Amorphous Silicon uncooled microbolometer development for years. This technology is now in production at Sofradir and first delivery have already been done to customers. From our background in modeling and material mastering LETI/LIR concentrate now on performance enhancement. This is a key point for cost reduction due to the fact that signal to noise ratio enhancement will allow us to decrease the pitch. A new approach of packaging is also described in this paper and first results are displayed. A new technological stack of amorphous silicon fully compatible with industrial process is presented. Electro-optical results obtained from an IRCMOS 320 X 240 with 35 μm pitch are presented. NETD close to 35 mK has been obtained with our new embodiment of amorphous silicon microbolometer technology.

  10. From amorphous to microcrystalline silicon films prepared by hydrogen dilution using the VHF (70 MHz) GD technique

    OpenAIRE

    Kroll, U.; Meier, Johannes; Torres, Pedro; Pohl, J.; Shah, Arvind

    2008-01-01

    The amorphous and microcrystalline silicon films have been prepared by hydrogen dilution from pure silane to silane concentrations ≥1.25%. At silane concentrations of less than 10%, a transition from the amorphous phase to the microcrystalline phase can be observed. X-ray diffraction spectroscopy indicates a preferential growth of the crystallites in the [220] direction. Additionally, the transition into the microcrystalline regime is accompanied by a shrinking of the optical gap, a reduction...

  11. Carbon-assisted growth and high visible-light optical reflectivity of amorphous silicon oxynitride nanowires

    Directory of Open Access Journals (Sweden)

    Tang Zirong

    2011-01-01

    Full Text Available Abstract Large amounts of amorphous silicon oxynitride nanowires have been synthesized on silicon wafer through carbon-assisted vapor-solid growth avoiding the contamination from metallic catalysts. These nanowires have the length of up to 100 μm, with a diameter ranging from 50 to 150 nm. Around 3-nm-sized nanostructures are observed to be homogeneously distributed within a nanowire cross-section matrix. The unique configuration might determine the growth of ternary amorphous structure and its special splitting behavior. Optical properties of the nanowires have also been investigated. The obtained nanowires were attractive for their exceptional whiteness, perceived brightness, and optical brilliance. These nanowires display greatly enhanced reflection over the whole visible wavelength, with more than 80% of light reflected on most of the wavelength ranging from 400 to 700 nm and the lowest reflectivity exceeding 70%, exhibiting performance superior to that of the reported white beetle. Intense visible photoluminescence is also observed over a broad spectrum ranging from 320 to 500 nm with two shoulders centered at around 444 and 468 nm, respectively.

  12. Flexible amorphous silicon solar cells and their application to PV systems

    Energy Technology Data Exchange (ETDEWEB)

    Ichikawa, Y.; Fujikake, S.; Yoshida, T.; Sakai, H.; Natsume, F. [Fuji Electric Co. Ltd., Yokosuka, Kanagawa (Japan). New Energy Lab.

    1996-12-31

    Hydrogenated amorphous silicon (a-Si:H) solar cells are regarded as the next generation product following crystalline silicon (c-Si) solar cells. The performance of the large area cells has been improved to a practical application level and the durability has been confirmed by a number of outdoor tests at demonstration sites under various climatic conditions. The mass production technology for realizing low cost a-Si photovoltaic (PV) modules, however, has not been developed very well and is still in an elementary stage. A flexible a-Si:H PV module has been developed, which is rolled up around a cylindrical core, has a width of about 1 m, and is able to be cut to any length. The amorphous solar cell fabricated on a heat resistant plastic film with a thickness of 50 {mu}m has a new monolithic series connected structure named SCAF (Series-Connection through Apertures formed on Film) to obtain a high output voltage required for practical use. The details of the structure and the technology of the fabrication process are described as well as some of its applications. (author). 11 figs., 3 refs.

  13. Friction and wear of plasma-deposited amorphous hydrogenated films on silicon nitride

    Science.gov (United States)

    Miyoshi, Kazuhisa

    1991-01-01

    An investigation was conducted to examine the friction and wear behavior of amorphous hydrogenated carbon (a-C:H) films in sliding contact with silicon nitride pins in both dry nitrogen and humid air environments. Amorphous hydrogenated carbon films approximately 0.06 micron thick were deposited on silicon nitride flat substrates by using the 30 kHz ac glow discharge of a planar plasma reactor. The results indicate that an increase in plasma deposition power gives an increase in film density and hardness. The high-density a-C:H films deposited behaved tribologically much like bulk diamond. In the dry nitrogen environment, a tribochemical reaction produced a substance, probably a hydrocarbon-rich layer, that decreased the coefficient of friction. In the humid air environment, tribochemical interactions drastically reduced the wear life of a-C:H films and water vapor greatly increased the friction. Even in humid air, effective lubrication is possible with vacuum-annealed a-C:H films. The vacuum-annealed high-density a-C:H film formed an outermost superficial graphitic layer, which behaved like graphite, on the bulk a-C:H film. Like graphite, the annealed a-C:H film with the superficial graphitic layer showed low friction when adsorbed water vapor was present.

  14. Depth profile study on Raman spectra of high-energy-electron-irradiated hydrogenated amorphous silicon films

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    According to the different penetration depths for the incident lights of 472 nm and 532 nm in hydrogenated amorphous silicon (a-Si:H) thin films, the depth profile study on Raman spectra of a-Si:H films was carried out. The network ordering evolution in the near surface and interior region of the unirradiated and irradiated a-Si:H films was investigated. The results show that there is a structural improvement in the shortand intermediate-range order towards the surface of the unirradiated a-Si:H films. The amorphous silicon network in the near and interior region becomes more disordered on the shortand intermediate-range scales after being irradiated with high energy electrons. However, the surface of the irradiated films becomes more disordered in comparison with their interior region, indicating that the created defects caused by electron irradiation are concentrated in the near surface of the irradiated films. Annealing eliminates the irradiation effects on a-Si:H thin films and the structural order of the irradiated films is similar to that of the unirradiated ones after being annealed. There exists a structural improvement in the shortand intermediate-range order towards the surface of the irradiated a-Si:H films after being annealed.

  15. Amorphous silicon based p-i-i-n photodetectors for point-of-care testing

    Energy Technology Data Exchange (ETDEWEB)

    Furin, Dominik; Proll, Guenther; Gauglitz, Guenther [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, 72076 Tuebingen (Germany); Thielmann, Johannes; Harendt, Christine [Institut fuer Mikroelektronik Stuttgart, Allmandring 30a, 70569 Stuttgart (Germany); Pfaefflin, Albrecht; Schleicher, Erwin [Universitaetsklinikum und Medizinische Fakultaet, Universitaetsklinikum Tuebingen, Geissweg 3, 72076 Tuebingen (Germany); Schubert, Markus B. [Institut fuer Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany); Saemann, Marc

    2010-04-15

    Modern medical diagnostics demands point-of-care testing (POCT) systems for quick tests in clinical or out-patient environments. This investigation combines the Reflectometric Interference Spectroscopy (RIfS) with thin film technology for a highly sensitive, direct optical and label-free detection of proteins, e.g. inflammation or cardiovascular markers. Amorphous silicon (a-Si) based thin film photodetectors replace the so far needed spectrometer and permit downsizing of the POCT system. Photodetectors with p-i-i-n structure adjust their spectral sensitivity according to the applied read-out voltage. The use of amorphous silicon carbide in the p-type and the first intrinsic layer enhances the sensitivity through very low dark currents of the photodetectors and enables the adjustment of their absorption characteristics. Integrating the thin film photodetectors on the rear side of the RIfS substrate eliminates optical losses and distortions, as compared to the standard RIfS setup. An integrated Application Specific Integrated Circuit (ASIC) chip performs a current-frequency conversion to accurately detect the photocurrent of up to eight parallel photodetector channels. In addition to the optimization of the photo-detectors, this contribution presents first successful direct optical and label-free RIfS measurements of C-reactive protein (CRP) and D-dimer in buffer solution in physiological relevant concentrations. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Solid state photochemistry. Subpanel A-2(b): Metastability in hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Carlson, D. [Solarex Corporation, Newton, PA (United States)

    1996-09-01

    All device quality amorphous silicon based materials exhibit degradation in electronic properties when exposed to sunlight. The photo-induced defects are associated with Si dangling bonds that are created by the recombination and/or trapping of photogenerated carriers. The defects are metastable and can be annealed out at temperatures of about 150 to 200 degrees Centigrade. The density of metastable defects is larger in films that are contaminated with > 10{sup 19} per cubic cm of impurities such as oxygen, carbon and nitrogen. However, recent experimental results indicate that some metastable defects are still present in films with very low impurity concentrations. The photo-induced defects typically saturate after 100 to 1000 hours of exposure to one sun illumination depending on the deposition conditions. There is also experimental evidence that photo-induced structural changes are occurring in the amorphous silicon based materials and that hydrogen may be playing an important role in both the photo-induced structural changes and in the creation of metastable defects.

  17. Aluminium-induced crystallization of amorphous silicon films deposited by DC magnetron sputtering on glasses

    International Nuclear Information System (INIS)

    Amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) films were deposited by DC magnetron sputtering technique with argon and hydrogen plasma mixture on Al deposited by thermal evaporation on glass substrates. The a-Si/Al and a-Si:H/Al thin films were annealed at different temperatures ranging from 250 to 550 deg. C during 4 h in vacuum-sealed bulb. The effects of annealing temperature on optical, structural and morphological properties of as-grown as well as the vacuum-annealed a-Si/Al and a-Si:H/Al thin films are presented in this contribution. The averaged transmittance of a-Si:H/Al film increases upon increasing the annealing temperature. XRD measurements clearly evidence that crystallization is initiated at 450 deg. C. The number and intensity of diffraction peaks appearing in the diffraction patterns are more important in a-Si:H/Al than that in a-Si/Al layers. Results show that a-Si:H films deposited on Al/glass crystallize above 450 deg. C and present better crystallization than the a-Si layers. The presence of hydrogen induces an improvement of structural properties of poly-Si prepared by aluminium-induced crystallization (AIC).

  18. Model of the recrystallization mechanism of amorphous silicon layers created by ion implantation

    International Nuclear Information System (INIS)

    The recrystallization behavior during annealing of thin films of amorphous (α) silicon, in contact with a single crystal silicon substrate (referred to as C), has been studied in the transmission electron microscope (TEM). The amorphous film is created during high dose phosphorus ion implantation at 100 keV. It was found that the crystal substrate orientation and the implantation temperature have dramatic effects on the recrystallizaton rate, and the defect microstructure produced during annealing. Specifically, (100) wafers implanted at 770K contain only a low density of dislocation loops, but when the same wafer is implanted at room temperature the dislocation density is increased drastically. (111) wafers, when implanted at 770K show a high density of microtwins, but as the implantation temperature is increased a gradual increase in the density of dislocation loops is observed along with a reduction of the microtwins. At an implantation temperature of about 1000C both orientations give an identical defect microstructure when annealed, which is a dense tangle of dislocations

  19. Silica nanoparticles on front glass for efficiency enhancement in superstrate-type amorphous silicon solar cells

    Science.gov (United States)

    Das, Sonali; Banerjee, Chandan; Kundu, Avra; Dey, Prasenjit; Saha, Hiranmay; Datta, Swapan K.

    2013-10-01

    Antireflective coating on front glass of superstrate-type single junction amorphous silicon solar cells (SCs) has been applied using highly monodispersed and stable silica nanoparticles (NPs). The silica NPs having 300 nm diameter were synthesized by Stober technique where the size of the NPs was controlled by varying the alcohol medium. The synthesized silica NPs were analysed by dynamic light scattering technique and Fourier transform infrared spectroscopy. The NPs were spin coated on glass side of fluorinated tin oxide (SnO2: F) coated glass superstrate and optimization of the concentration of the colloidal solution, spin speed and number of coated layers was done to achieve minimum reflection characteristics. An estimation of the distribution of the NPs for different optimization parameters has been done using field-emission scanning electron microscopy. Subsequently, the transparent conducting oxide coated glass with the layer having the minimum reflectance is used for fabrication of amorphous silicon SC. Electrical analysis of the fabricated cell indicates an improvement of 6.5% in short-circuit current density from a reference of 12.40 mA cm-2 while the open circuit voltage and the fill factor remains unaltered. A realistic optical model has also been proposed to gain an insight into the system.

  20. Achieving thermography with a thermal security camera using uncooled amorphous silicon microbolometer image sensors

    Science.gov (United States)

    Wang, Yu-Wei; Tesdahl, Curtis; Owens, Jim; Dorn, David

    2012-06-01

    Advancements in uncooled microbolometer technology over the last several years have opened up many commercial applications which had been previously cost prohibitive. Thermal technology is no longer limited to the military and government market segments. One type of thermal sensor with low NETD which is available in the commercial market segment is the uncooled amorphous silicon (α-Si) microbolometer image sensor. Typical thermal security cameras focus on providing the best image quality by auto tonemaping (contrast enhancing) the image, which provides the best contrast depending on the temperature range of the scene. While this may provide enough information to detect objects and activities, there are further benefits of being able to estimate the actual object temperatures in a scene. This thermographic ability can provide functionality beyond typical security cameras by being able to monitor processes. Example applications of thermography[2] with thermal camera include: monitoring electrical circuits, industrial machinery, building thermal leaks, oil/gas pipelines, power substations, etc...[3][5] This paper discusses the methodology of estimating object temperatures by characterizing/calibrating different components inside a thermal camera utilizing an uncooled amorphous silicon microbolometer image sensor. Plots of system performance across camera operating temperatures will be shown.

  1. Three hydrogenated amorphous silicon photodiodes stacked for an above integrated circuit colour sensor

    Energy Technology Data Exchange (ETDEWEB)

    Gidon, Pierre; Giffard, Benoit; Moussy, Norbert; Parrein, Pascale; Poupinet, Ludovic [CEA-LETI, MINATEC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2010-03-15

    We present theoretical simulation and experimental results of a new colour pixel structure. This pixel catches the light in three stacked amorphous silicon photodiodes encompassed between transparent electrodes. The optical structure has been simulated for signal optimisation. The thickness of each stacked layer is chosen in order to absorb the maximum of light and the three signals allow to linearly calculate the CIE colour coordinates 1 with minimum error and noise. The whole process is compatible with an above integrated circuit (IC) approach. Each photodiode is an n-i-p structure. For optical reason, the upper diode must be controlled down to 25 nm thickness. The first test pixel structure allows a good recovering of colour coordinates. The measured absorption spectrum of each photodiode is in good agreement with our simulations. This specific stack with three photodiodes per pixel totalises two times more signal than an above IC pixel under a standard Bayer pattern 2,3. In each square of this GretagMacbeth chart is the reference colour on the right and the experimentally measured colour on the left with three amorphous silicon photodiodes per pixel. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  2. AZO-Ag-AZO transparent electrode for amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Metal-based transparent electrodes can be fabricated at low temperatures, which is crucial for various substrate materials and solar cells. In this work, an oxide-metal-oxide (OMO) transparent electrode based on aluminum zinc oxide (AZO) and silver is compared to AZO layers, fabricated at different temperatures and indium tin oxides. With the OMO structure, a sheet resistance of 7.1/square and a transparency above 80% for almost the entire visible spectrum were achieved. The possible application of such electrodes on a textured solar cell was demonstrated on the example of a rough ZnO substrate. An OMO structure is benchmarked in a n-i-p amorphous silicon solar cell against an AZO front contact fabricated at 200 °C. In the experiment, the OMO electrode shows a superior performance with an efficiency gain of 30%. - Highlights: • Multilayer transparent electrode based on aluminum zinc oxide (AZO) and Ag • Comparison of AZO-Ag-AZO transparent electrode to AZO and indium tin oxide • Performance of AZO-Ag-AZO transparent electrodes on textured surfaces • Comparison of amorphous silicon solar cells with different transparent electrodes

  3. High performance uncooled amorphous silicon VGA IRFPA with 17-µm pixel-pitch

    Science.gov (United States)

    Tissot, J. L.; Durand, A.; Garret, Th.; Minassian, C.; Robert, P.; Tinnes, S.; Vilain, M.

    2010-04-01

    The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon enables ULIS to develop VGA IRFPA formats with 17μm pixel-pitch to build up the currently available product catalog. This detector keeps all the innovations developed on the 25 μm pixel-pitch ROIC (detector configuration by serial link, low power consumption and wide electrical dynamic range). The specific appeal of this unit lies in the high spatial resolution it provides. The reduction of the pixel-pitch turns this TEC-less VGA array into a product well adapted for high resolution and compact systems. In the last part of the paper, we will look more closely at the high electro-optical performances of this IRFPA and the rapid performance enhancement. We will insist on NETD trade-off with wide thermal dynamic range, as well as the high characteristics uniformity, achieved thanks to the mastering of the amorphous silicon technology coupled with the ROIC design. This technology node paves the way to high end products as well as low end compact smaller formats like 160 x 120 or smaller.

  4. Aluminium-induced crystallization of amorphous silicon films deposited by DC magnetron sputtering on glasses

    Energy Technology Data Exchange (ETDEWEB)

    Kezzoula, F., E-mail: kezzoula@usa.com [UDTS 2Bd Frantz Fanon 7 merveilles Algiers (Algeria); Laboratory of Materials, Mineral and Composite (LMMC), Boumerdes University (Algeria); Hammouda, A. [UPR CNRS 3079 CEMHTI - 1D Avenue de la Recherche Scientifique, 45071 Orleans Cedex 2 (France); Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers (Algeria); Universite d' Orleans, 45067 Orleans Cedex 2 (France); Kechouane, M. [Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers (Algeria); Simon, P. [UPR CNRS 3079 CEMHTI - 1D Avenue de la Recherche Scientifique, 45071 Orleans Cedex 2 (France); Universite d' Orleans, 45067 Orleans Cedex 2 (France); Abaidia, S.E.H. [Laboratory of Materials, Mineral and Composite (LMMC), Boumerdes University (Algeria); Keffous, A. [UDTS 2Bd Frantz Fanon 7 merveilles Algiers (Algeria); Cherfi, R. [Equipe Couches Minces, Laboratoire de Physique des Materiaux, Faculte de Physique, USTHB, Algiers (Algeria); Menari, H.; Manseri, A. [UDTS 2Bd Frantz Fanon 7 merveilles Algiers (Algeria)

    2011-09-15

    Amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) films were deposited by DC magnetron sputtering technique with argon and hydrogen plasma mixture on Al deposited by thermal evaporation on glass substrates. The a-Si/Al and a-Si:H/Al thin films were annealed at different temperatures ranging from 250 to 550 deg. C during 4 h in vacuum-sealed bulb. The effects of annealing temperature on optical, structural and morphological properties of as-grown as well as the vacuum-annealed a-Si/Al and a-Si:H/Al thin films are presented in this contribution. The averaged transmittance of a-Si:H/Al film increases upon increasing the annealing temperature. XRD measurements clearly evidence that crystallization is initiated at 450 deg. C. The number and intensity of diffraction peaks appearing in the diffraction patterns are more important in a-Si:H/Al than that in a-Si/Al layers. Results show that a-Si:H films deposited on Al/glass crystallize above 450 deg. C and present better crystallization than the a-Si layers. The presence of hydrogen induces an improvement of structural properties of poly-Si prepared by aluminium-induced crystallization (AIC).

  5. Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells

    OpenAIRE

    Yang-Shin Lin; Shui-Yang Lien; Chao-Chun Wang; Chia-Hsun Hsu; Chih-Hsiang Yang; Asheesh Nautiyal; Dong-Sing Wuu; Pi-Chuen Tsai; Shuo-Jen Lee

    2011-01-01

    The amorphous silicon/amorphous silicon (a-Si/a-Si) tandem solar cells have attracted much attention in recent years, due to the high efficiency and low manufacturing cost compared to the single-junction a-Si solar cells. In this paper, the tandem cells are fabricated by high-frequency plasma-enhanced chemical vapor deposition (HF-PECVD) at 27.1 MHz. The effects of the recombination layer and the i-layer thickness matching on the cell performance have been investigated. The results show that ...

  6. Direct measurement of free-energy barrier to nucleation of crystallites in amorphous silicon thin films

    Science.gov (United States)

    Shi, Frank G.

    1994-01-01

    A method is introduced to measure the free-energy barrier W(sup *), the activation energy, and activation entropy to nucleation of crystallites in amorphous solids, independent of the energy barrier to growth. The method allows one to determine the temperature dependence of W(sup *), and the effect of the preparation conditions of the initial amorphous phase, the dopants, and the crystallization methds on W(sup *). The method is applied to determine the free-energy barrier to nucleation of crystallites in amorphous silicon (a-Si) thin films. For thermally induced nucleation in a-Si thin films with annealing temperatures in the range of from 824 to 983 K, the free-energy barrier W(sup *) to nucleation of silicon crystals is about 2.0 - 2.1 eV regardless of the preparation conditions of the films. The observation supports the idea that a-Si transforms into an intermediate amorphous state through the structural relaxation prior to the onset of nucleation of crystallites in a-Si. The observation also indicates that the activation entropy may be an insignificant part of the free-energy barrier for the nucleation of crystallites in a-Si. Compared with the free-energy barrier to nucleation of crystallites in undoped a-Si films, a significant reduction is observed in the free-energy barrier to nucleation in Cu-doped a-Si films. For a-Si under irradiation of Xe(2+) at 10(exp 5) eV, the free-energy barrier to ion-induced nucleation of crystallites is shown to be about half of the value associated with thermal-induced nucleation of crystallites in a-Si under the otherwise same conditions, which is much more significant than previously expected. The present method has a general kinetic basis; it thus should be equally applicable to nucleation of crystallites in any amorphous elemental semiconductors and semiconductor alloys, metallic and polymeric glasses, and to nucleation of crystallites in melts and solutions.

  7. Structural, hydrogen bonding and in situ studies of the effect of hydrogen dilution on the passivation by amorphous silicon of n-type crystalline (100) silicon surfaces

    OpenAIRE

    Meddeb, H.; Bearda, T.; Abdelraheem, Y.; Ezzaouia, H.; Gordon, I.; Szlufcik, J.; Poortmans, Jef

    2015-01-01

    Hydrogenated amorphous silicon (a-Si : H) layers deposited by chemical vapour deposition provide an attractive route to achieve high-performance crystalline silicon (c-Si) solar cells due to their deposition at low temperatures and their superior passivation quality. Hydrogen certainly plays an additional crucial role by passivating the dangling bonds, and thus improving the electrical and optical properties. In this work, we present the variation of the effective lifetime with the hydrogen d...

  8. Impact and Penetration of Thin Aluminum 2024 Flat Panels at Oblique Angles of Incidence

    Science.gov (United States)

    Ruggeri, Charles R.; Revilock, Duane M.; Pereira, J. Michael; Emmerling, William; Queitzsch, Gilbert K., Jr.

    2015-01-01

    under more extreme conditions, using a projectile with a more complex shape and sharp contacts, impacting flat panels at oblique angles of incidence.

  9. System performance of a prototype flat-panel imager operated under mammographic conditions

    International Nuclear Information System (INIS)

    The results of an empirical and theoretical investigation of the performance of a high-resolution, active matrix flat-panel imager performed under mammographic conditions are reported. The imager is based upon a prototype, indirect detection active matrix array incorporating a discrete photodiode in each pixel and a pixel-to-pixel pitch of 97 μm. The investigation involved three imager configurations corresponding to the use of three different x-ray converters with the array. The converters were a conventional Gd2O2S-based mammographic phosphor screen (Min-R) and two structured CsI:Tl scintillators: one optimized for high spatial resolution (FOS-HR) and the other for high light output (FOS-HL). Detective quantum efficiency for mammographic exposures ranging from ∼2 to ∼40 mR at 26 kVp were determined for each imager configuration through measurements of x-ray sensitivity, modulation transfer function (MTF), and noise power spectrum (NPS). All configurations were found to provide significant presampling MTF at frequencies beyond the Nyquist frequency of the array, ∼5.2 mm-1, consistent with the high spatial resolution of the converters. In addition, the effect of additive electronic noise on the NPS was found to be significantly larger for the configuration with lower system gain (FOS-HR) than for the configurations with higher gain (Min-R, FOS-HL). The maximum DQE values obtained with the CsI:Tl scintillators were considerably greater than those obtained with the Min-R screen due to the significantly lower Swank noise of the scintillators. Moreover, DQE performance was found to degrade with decreasing exposure, although this exposure-dependence was considerably reduced for the higher gain configurations. Theoretical calculations based on the cascaded systems model were found to be in generally good agreement with these empirically determined NPS and DQE values. In this study, we provide an example of how cascaded systems modeling can be used to identify

  10. An investigation of flat panel equipment variables on image quality with a dedicated cardiac phantom.

    Science.gov (United States)

    Dragusin, O; Bosmans, H; Pappas, C; Desmet, W

    2008-09-21

    Image quality (IQ) evaluation plays a key role in the process of optimization of new x-ray systems. Ideally, this process should be supported by real clinical images, but ethical issues and differences in anatomy and pathology of patients make it impossible. Phantom studies might overcome these issues. This paper presents the IQ evaluation of 30 cineangiographic films acquired with a cardiac flat panel system. The phantom used simulates the anatomy of the heart and allows the circulation of contrast agent boluses through coronary arteries. Variables investigated with influence on IQ and radiation dose are: tube potential, detector dose, added Copper filters, dynamic density optimization (DDO) and viewing angle. The IQ evaluation consisted of scoring 4 simulated calcified lesions located on different coronary artery segments in terms of degree of visualization. Eight cardiologists rated the lesions using a five-point scale ((1) lesion not visible to (5) very good visibility). Radiation doses associated to the angiograms are expressed in terms of incident air kerma (IAK) and effective dose that has been calculated with PCXMX software (STUK, Finland) from the exposure settings assuming a standard sized patient of 70 Kg. Mean IQ scores ranged from 1.68 to 4.88. The highest IQ scores were obtained for the angiograms acquired with tube potential 80 kVp, no added Cu filters, DDO 60%, RAO and LAO views and the highest entrance detector dose that has been used in the present study, namely 0.17 microGy/im. Radiation doses (IAK approximately 40 mGy and effective dose of 1 mSv) were estimated for angiograms acquired at 15 frames s(-1), detector field-of-view 20 cm, and a length of 5 s. The following parameters improved the IQ factor significantly: a change in tube potential from 96 to 80 kVp, detector dose from 0.10 microGy/im to 0.17 microGy/im, the absence of Copper filtration. DDO variable which is a post-processing parameter should be carefully evaluated because it alters

  11. Measurement of joint kinematics using a conventional clinical single-perspective flat-panel radiography system

    Energy Technology Data Exchange (ETDEWEB)

    Seslija, Petar; Teeter, Matthew G.; Yuan Xunhua; Naudie, Douglas D. R.; Bourne, Robert B.; MacDonald, Steven J.; Peters, Terry M.; Holdsworth, David W. [Biomedical Engineering Graduate Program, University of Western Ontario, London, Ontario N6A 5B9 (Canada) and Imaging Research Laboratories, Robarts Research Institute, London, Ontario N6A 5K8 (Canada); Department of Medical Biophysics, University of Western Ontario, London, Ontario N6A 5C1 (Canada) and Imaging Research Laboratories, Robarts Research Institute, London, Ontario N6A 5K8 (Canada); Imaging Research Laboratories, Robarts Research Institute, London, Ontario N6A 5K8 (Canada) and Division of Orthopaedic Surgery, University of Western Ontario and London Health Sciences Centre, London, Ontario N6A 4L6 (Canada); Division of Orthopaedic Surgery, University of Western Ontario and London Health Sciences Centre, London, Ontario N6A 4L6 (Canada); Biomedical Engineering Graduate Program, University of Western Ontario, London, Ontario N6A 5B9 (Canada); Department of Medical Biophysics, University of Western Ontario, London, Ontario N6A 5C1 (Canada) and Imaging Research Laboratories, Robarts Research Institute, London, Ontario N6A 5K8 (Canada)

    2012-10-15

    Purpose: The ability to accurately measure joint kinematics is an important tool in studying both normal joint function and pathologies associated with injury and disease. The purpose of this study is to evaluate the efficacy, accuracy, precision, and clinical safety of measuring 3D joint motion using a conventional flat-panel radiography system prior to its application in an in vivo study. Methods: An automated, image-based tracking algorithm was implemented to measure the three-dimensional pose of a sparse object from a two-dimensional radiographic projection. The algorithm was tested to determine its efficiency and failure rate, defined as the number of image frames where automated tracking failed, or required user intervention. The accuracy and precision of measuring three-dimensional motion were assessed using a robotic controlled, tibiofemoral knee phantom programmed to mimic a subject with a total knee replacement performing a stair ascent activity. Accuracy was assessed by comparing the measurements of the single-plane radiographic tracking technique to those of an optical tracking system, and quantified by the measurement discrepancy between the two systems using the Bland-Altman technique. Precision was assessed through a series of repeated measurements of the tibiofemoral kinematics, and was quantified using the across-trial deviations of the repeated kinematic measurements. The safety of the imaging procedure was assessed by measuring the effective dose of ionizing radiation associated with the x-ray exposures, and analyzing its relative risk to a human subject. Results: The automated tracking algorithm displayed a failure rate of 2% and achieved an average computational throughput of 8 image frames/s. Mean differences between the radiographic and optical measurements for translations and rotations were less than 0.08 mm and 0.07 Degree-Sign in-plane, and 0.24 mm and 0.6 Degree-Sign out-of-plane. The repeatability of kinematics measurements performed

  12. An investigation of flat panel equipment variables on image quality with a dedicated cardiac phantom

    International Nuclear Information System (INIS)

    Image quality (IQ) evaluation plays a key role in the process of optimization of new x-ray systems. Ideally, this process should be supported by real clinical images, but ethical issues and differences in anatomy and pathology of patients make it impossible. Phantom studies might overcome these issues. This paper presents the IQ evaluation of 30 cineangiographic films acquired with a cardiac flat panel system. The phantom used simulates the anatomy of the heart and allows the circulation of contrast agent boluses through coronary arteries. Variables investigated with influence on IQ and radiation dose are: tube potential, detector dose, added Copper filters, dynamic density optimization (DDO) and viewing angle. The IQ evaluation consisted of scoring 4 simulated calcified lesions located on different coronary artery segments in terms of degree of visualization. Eight cardiologists rated the lesions using a five-point scale ((1) lesion not visible to (5) very good visibility). Radiation doses associated to the angiograms are expressed in terms of incident air kerma (IAK) and effective dose that has been calculated with PCXMX software (STUK, Finland) from the exposure settings assuming a standard sized patient of 70 Kg. Mean IQ scores ranged from 1.68 to 4.88. The highest IQ scores were obtained for the angiograms acquired with tube potential 80 kVp, no added Cu filters, DDO 60%, RAO and LAO views and the highest entrance detector dose that has been used in the present study, namely 0.17 μGy/im. Radiation doses (IAK ∼40 mGy and effective dose of 1 mSv) were estimated for angiograms acquired at 15 frames s-1, detector field-of-view 20 cm, and a length of 5 s. The following parameters improved the IQ factor significantly: a change in tube potential from 96 to 80 kVp, detector dose from 0.10 μGy/im to 0.17 μGy/im, the absence of Copper filtration. DDO variable which is a post-processing parameter should be carefully evaluated because it alters the quality of the

  13. Amorphous and microcrystalline silicon films grown at low temperatures by radio-frequency and hot-wire chemical vapor deposition

    OpenAIRE

    Alpuim, P.; Chu, Virginia; Conde, João Pedro

    1999-01-01

    The effect of hydrogen dilution on the optical, transport, and structural properties of amorphous and microcrystalline silicon thin films deposited by hot-wire (HW) chemical vapor deposition and radio-frequency (rf) plasma-enhanced chemical vapor deposition using substrate temperatures (T-sub) of 100 and 25 degrees C is reported. Microcrystalline silicon (mu c-Si:H) is obtained using HW with a large crystalline fraction and a crystallite size of similar to 30 nm for hydrogen dilutions above 8...

  14. The Synthesis and Structural Properties of Crystalline Silicon Quantum Dots upon Thermal Annealing of Hydrogenated Amorphous Si-Rich Silicon Carbide Films

    Science.gov (United States)

    Wen, Guozhi; Zeng, Xiangbin; Li, Xianghu

    2016-08-01

    Silicon quantum dots (QDs) embedded in non-stoichiometric hydrogenated silicon carbide (SiC:H) thin films have been successfully synthesized by plasma-enhanced chemical vapor deposition and post-annealing. The chemical composition analyses have been carried out by x-ray photoelectron spectroscopy (XPS). The bonding configurations have been deduced from Fourier transform infrared absorption measurements (FTIR). The evolution of microstructure with temperature has been characterized by glancing incident x-ray diffraction (XRD) and Raman diffraction spectroscopy. XPS and FTIR show that it is in Si-rich feature and there are a few hydrogenated silicon clusters in the as-grown sample. XRD and Raman diffraction spectroscopy show that it is in amorphous for the as-grown sample, while crystalline silicon QDs have been synthesized in the 900°C annealed sample. Silicon atoms precipitation from the SiC matrix or silicon phase transition from amorphous SiC is enhanced with annealing temperature increase. The average sizes of silicon QDs are about 5.1 nm and 5.6 nm, the number densities are as high as 1.7 × 1012 cm-2 and 3.2 × 1012 cm-2, and the crystalline volume fractions are about 58.3% and 61.3% for the 900°C and 1050°C annealed samples, respectively. These structural properties analyses provide an understanding about the synthesis of silicon QDs upon thermal annealing for applications in next generation optoelectronic and photovoltaic devices.

  15. Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

    International Nuclear Information System (INIS)

    Results on characterization of electrical properties of amorphous Si films for the 3 different growth methods (RF sputtering, PECVD [plasma enhanced], LPCVD [low pressure]) are reported. Performance of these a-Si films as heterojunctions on high resistivity p-type and n- type crystalline Si is examined by measuring the noise, leakage current, and the alpha particle response of 5mm dia detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. Results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated

  16. Efficient visible luminescence of nanocrystalline silicon prepared from amorphous silicon films by thermal annealing and stain etching

    Directory of Open Access Journals (Sweden)

    Nikulin Valery

    2011-01-01

    Full Text Available Abstract Films of nanocrystalline silicon (nc-Si were prepared from hydrogenated amorphous silicon (a-Si:H by using rapid thermal annealing. The formed nc-Si films were subjected to stain etching in hydrofluoric acid solutions in order to passivate surfaces of nc-Si. The optical reflectance spectroscopy revealed the nc-Si formation as well as the high optical quality of the formed films. The Raman scattering spectroscopy was used to estimate the mean size and volume fraction of nc-Si in the annealed films, which were about 4 to 8 nm and 44 to 90%, respectively, depending on the annealing regime. In contrast to as-deposited a-Si:H films, the nc-Si films after stain etching exhibited efficient photoluminescence in the spectral range of 600 to 950 nm at room temperature. The photoluminescence intensity and lifetimes of the stain etched nc-Si films were similar to those for conventional porous Si formed by electrochemical etching. The obtained results indicate new possibilities to prepare luminescent thin films for Si-based optoelectronics.

  17. Improving the performance of amorphous and crystalline silicon heterojunction solar cells by monitoring surface passivation

    Energy Technology Data Exchange (ETDEWEB)

    Schuettauf, J.W.A.; Van der Werf, C.H.M.; Kielen, I.M.; Van Sark, W.G.J.H.M.; Rath, J.K.; Schropp, R.E.I. [Utrecht University, Debye Institute for Nanomaterials Science, Nanophotonics, Physics of Devices, Princetonplein 5, 3584 CC Utrecht (Netherlands)

    2012-09-15

    The influence of thermal annealing on the crystalline silicon surface passivating properties of selected amorphous silicon containing layer stacks (including intrinsic and doped films), as well as the correlation with silicon heterojunction solar cell performance has been investigated. All samples have been isochronally annealed for 1 h in an N{sub 2} ambient at temperatures between 150C and 300C in incremental steps of 15C. For intrinsic films and intrinsic/n-type stacks, an improvement in passivation quality is observed up to 255C and 270C, respectively, and a deterioration at higher temperatures. For intrinsic/n-type a-Si:H layer stacks, a maximum minority carrier lifetime of 13.3 ms at an injection level of 10{sup 15} cm{sup -3} has been measured. In contrast, for intrinsic/p-type a-Si:H layer stacks, a deterioration in passivation is observed upon annealing over the whole temperature range. Comparing the lifetime values and trends for the different layer stacks to the performance of the corresponding cells, it is inferred that the intrinsic/p-layer stack is limiting device performance. Furthermore, thermal annealing of p-type layers should be avoided entirely. We therefore propose an adapted processing sequence, leading to a substantial improvement in efficiency to 16.7%, well above the efficiency of 15.8% obtained with the 'standard' processing sequence.

  18. Development of thin film amorphous silicon oxide/microcrystalline silicon double-junction solar cells and their temperature dependence

    Energy Technology Data Exchange (ETDEWEB)

    Sriprapha, K.; Piromjit, C.; Limmanee, A.; Sritharathikhun, J. [Institute of Solar Energy Technology Development (SOLARTEC), National Science and Technology Development Agency (NSTDA), 111 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120 (Thailand)

    2011-01-15

    We have developed thin film silicon double-junction solar cells by using micromorph structure. Wide bandgap hydrogenated amorphous silicon oxide (a-SiO:H) film was used as an absorber layer of top cell in order to obtain solar cells with high open circuit voltage (V{sub oc}), which are attractive for the use in high temperature environment. All p, i and n layers were deposited on transparent conductive oxide (TCO) coated glass substrate by a 60 MHz-very-high-frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique. The p-i-n-p-i-n double-junction solar cells were fabricated by varying the CO{sub 2} and H{sub 2} flow rate of i top layer in order to obtain the wide bandgap with good quality material, which deposited near the phase boundary between a-SiO:H and hydrogenated microcrystalline silicon oxide ({mu}c-SiO:H), where the high V{sub oc} can be expected. The typical a-SiO:H/{mu}c-Si:H solar cell showed the highest initial cell efficiency of 10.5%. The temperature coefficient (TC) of solar cells indicated that the values of TC for conversion efficiency ({eta}) of the double-junction solar cells were inversely proportional to the initial V{sub oc}, which corresponds to the bandgap of the top cells. The TC for {eta} of typical a-SiO:H/{mu}c-Si:H was -0.32%/ C, lower than the value of conventional a-Si:H/{mu}c-Si:H solar cell. Both the a-SiO:H/{mu}c-Si:H solar cell and the conventional solar cell showed the same light induced degradation ratio of about 20%. We concluded that the solar cells using wide bandgap a-SiO:H film in the top cells are promising for the use in high temperature regions. (author)

  19. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    Energy Technology Data Exchange (ETDEWEB)

    Mouro, J.; Gualdino, A.; Chu, V. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Conde, J. P. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Department of Bioengineering, Instituto Superior Técnico (IST), 1049-001 Lisbon (Portugal)

    2013-11-14

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.

  20. Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Klaver, A.; Nádaždy, V.; Zeman, M.; Swaaiij, R.A.C.M.M.

    2006-01-01

    We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the

  1. Estimation of the impact of electrostatic discharge on density of states in hydrogenated amorphous silicon thin-film transistors

    NARCIS (Netherlands)

    Tosic Golo, Natasa; Wal, van der Siebrigje; Kuper, F.G.; Mouthaan, A.J.

    2002-01-01

    The objective of this letter is to give an estimation of the impact of an electrostatic discharge (ESD) stress on the density of states (DOS) within the energy gap of hydrogenated amorphous silicon (a-Si:H) thin-film transistors. ESD stresses were applied by means of a transmission line model tester

  2. Behavioral data of thin-film single junction amorphous silicon (a-Si photovoltaic modules under outdoor long term exposure

    Directory of Open Access Journals (Sweden)

    Sofiane Kichou

    2016-06-01

    Further discussions and interpretations concerning the data shared in this article can be found in the research paper “Characterization of degradation and evaluation of model parameters of amorphous silicon photovoltaic modules under outdoor long term exposure” (Kichou et al., 2016 [1].

  3. Natively textured ZnO grown by PECVD as front electrode material for amorphous silicon pin solar cells

    NARCIS (Netherlands)

    Löffler, J.; Schropp, R.E.I.; Groenen, Ft.; Van De Sanden, M.C.M.; Linden, J.L.

    2000-01-01

    Natively textured ZnO layers for the application as front electrode material in amorphous silicon pin solar cells have been deposited by Expanding Thermal Plasma Chemical Vapor Deposition. Films deposited in the temperature regime from 150 to 350°C at a rate between 0.65 and 0.75 nm/s have been char

  4. Prospective crystallization of amorphous Si films for new Si TFTs

    Energy Technology Data Exchange (ETDEWEB)

    Noguchi, Takashi [University of the Ryukyus, Fuculty of Engineering, Nishihara, Okinawa (Japan)

    2008-07-01

    Prospective crystallization results of amorphous silicon film are reviewed and are discussed. Silicon TFTs are playing an important role for Active-Matrix Flat Panel Displays (AM-FPD) based on amorphous or poly-Si thin-film transistors (TFTs). Poly-Si TFTs provide a possibility to develop highly functional system on pane (SoP) applications. In order to get a high performance TFT, large poly-crystal grains or high cystallinity for the film is required. Two basic crystallization techniques namely solid phase crystallization (SPC) and excimer laser crystallization (ELC) are reviewed and relating issues are described. A grain growth technique has been developed based on the two crystallization techniques, so far. In order to mount a poly-Si TFT system on a flexible panel such as a plastic, an excimer laser of UV pulse beam has an advantage for the TFT channel as well as for the source and drain contacts as a ultra-low temperature poly-Si (U-LTPS) process. To realize a high performance TFT of uniform and high carrier mobility, location control crystallization had been proposed. Some of the distinctive results for crystal orientation control of (100) and (111) face using the laser crystallization techniques are described. In the future, single-crystalline Si TFT of a functional 3D structure is expected to realize an advanced SoP for ubiquitous electronics era. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Circle plus Partial Helical Scan Scheme for a Flat Panel Detector-Based Cone Beam Breast X-Ray CT

    OpenAIRE

    Dong Yang; Ruola Ning; Weixing Cai

    2009-01-01

    Flat panel detector-based cone beam breast CT (CBBCT) can provide 3D image of the scanned breast with 3D isotropic spatial resolution, overcoming the disadvantage of the structure superimposition associated with X-ray projection mammography. It is very difficult for Mammography to detect a small carcinoma (a few millimeters in size) when the tumor is occult or in dense breast. CBBCT featured with circular scan might be the most desirable mode in breast imaging due to its simple geometrical co...

  6. An overview of uncooled infrared sensors technology based on amorphous silicon and silicon germanium alloys

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio, Roberto; Mireles, Jose Jr. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, 32310 Chihuahua (Mexico); Moreno, Mario; Torres, Alfonso; Kosarev, Andrey [National Institute for Astrophysics Optics and Electronics INAOE, Luis E. Erro 1, PO Box 51 and 216, 7200 Puebla (Mexico); Heredia, Aurelio [Universidad Popular Autonoma del Estado de Puebla, 21 sur 1103 Col. Santiago, 72160 Puebla (Mexico)

    2010-04-15

    At the present time there are commercially available large un-cooled micro-bolometer arrays (as large as 1024 x 768 pixels) for a variety of thermal imaging applications. Different thermo-sensing materials have been employed as thermo sensing elements as Vanadium Oxide (VO{sub x}), metals, and amorphous and polycrystalline semiconductors. Those materials present good characteristics but also have some disadvantages. As a consequence none of the commercially available arrays contain optimum pixels with an optimum thermo-sensing material. This paper reviews the development of the un-cooled bolometer technology and the research achievements on this area, with special attention on the key factors that would lead to improve the pixels performance characteristics. The work considers the R and D of microbolometer arrays and the integration with MEMS and IC technologies. A comparative study with the state of the art and data reported in literature is presented. Finally, further directions of uncooled bolometer based in thin films materials are also discussed in this paper. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Ultrafast all-optical arithmetic logic based on hydrogenated amorphous silicon microring resonators

    Science.gov (United States)

    Gostimirovic, Dusan; Ye, Winnie N.

    2016-03-01

    For decades, the semiconductor industry has been steadily shrinking transistor sizes to fit more performance into a single silicon-based integrated chip. This technology has become the driving force for advances in education, transportation, and health, among others. However, transistor sizes are quickly approaching their physical limits (channel lengths are now only a few silicon atoms in length), and Moore's law will likely soon be brought to a stand-still despite many unique attempts to keep it going (FinFETs, high-k dielectrics, etc.). This technology must then be pushed further by exploring (almost) entirely new methodologies. Given the explosive growth of optical-based long-haul telecommunications, we look to apply the use of high-speed optics as a substitute to the digital model; where slow, lossy, and noisy metal interconnections act as a major bottleneck to performance. We combine the (nonlinear) optical Kerr effect with a single add-drop microring resonator to perform the fundamental AND-XOR logical operations of a half adder, by all-optical means. This process is also applied to subtraction, higher-order addition, and the realization of an all-optical arithmetic logic unit (ALU). The rings use hydrogenated amorphous silicon as a material with superior nonlinear properties to crystalline silicon, while still maintaining CMOS-compatibility and the many benefits that come with it (low cost, ease of fabrication, etc.). Our method allows for multi-gigabit-per-second data rates while maintaining simplicity and spatial minimalism in design for high-capacity manufacturing potential.

  8. Picosecond and nanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications

    Science.gov (United States)

    Theodorakos, I.; Zergioti, I.; Vamvakas, V.; Tsoukalas, D.; Raptis, Y. S.

    2014-01-01

    In this work, a picosecond diode pumped solid state laser and a nanosecond Nd:YAG laser have been used for the annealing and the partial nano-crystallization of an amorphous silicon layer. These experiments were conducted as an alternative/complementary to plasma-enhanced chemical vapor deposition method for fabrication of micromorph tandem solar cell. The laser experimental work was combined with simulations of the annealing process, in terms of temperature distribution evolution, in order to predetermine the optimum annealing conditions. The annealed material was studied, as a function of several annealing parameters (wavelength, pulse duration, fluence), as far as it concerns its structural properties, by X-ray diffraction, SEM, and micro-Raman techniques.

  9. Mapping between atomistic simulations and Eshelby inclusions in the shear deformation of an amorphous silicon model

    Science.gov (United States)

    Albaret, T.; Tanguy, A.; Boioli, F.; Rodney, D.

    2016-05-01

    In this paper we perform quasistatic shear simulations of model amorphous silicon bulk samples with Stillinger-Weber-type potentials. Local plastic rearrangements identified based on local energy variations are fitted through their displacement fields on collections of Eshelby spherical inclusions, allowing determination of their transformation strain tensors. The latter are then used to quantitatively reproduce atomistic stress-strain curves, in terms of both shear and pressure components. We demonstrate that our methodology is able to capture the plastic behavior predicted by different Stillinger-Weber potentials, in particular, their different shear tension coupling. These calculations justify the decomposition of plasticity into shear transformations used so far in mesoscale models and provide atomic-scale parameters that can be used to limit the empiricism needed in such models up to now.

  10. Broadband, stable and highly coherent supercontinuum generation at telecommunication wavelengths in an hydrogenated amorphous silicon waveguide

    CERN Document Server

    Leo, F; Kuyken, B; Roelkens, G; Gorza, S -P

    2014-01-01

    Hydrogenated amorphous silicon (a:Si-H) has recently been recognized as a highly nonlinear CMOS compatible photonic platform. We experimentally demonstrate the generation of a supercontinuum (SC) spanning over 500 nm in a-Si:H photonic wire waveguide at telecommunication wavelengths using femtosecond input pulse with energy lower than 5 pJ. Numerical modeling of pulse propagation in the waveguide, based on the experimentally characterized dispersion profile, shows that the supercontinuum is the result of soliton fission and dispersive wave generation. It is demonstrated that the SC is highly coherent and that the waveguides do not suffer from material degradation under femtosecond pulse illumination. Finally, a direct comparison of SC generation in c-Si and a-Si:H waveguides confirms the higher performances of a-Si:H over c-Si for broadband low power SC generation at telecommunication wavelengths.

  11. Structure of amorphous silicon alloy films: Annual subcontract report, January 15, 1988--January 14, 1989

    Energy Technology Data Exchange (ETDEWEB)

    Norberg, R.E.; Fedders, P.A.

    1989-06-01

    The principal objective of this research program has been to improve the understanding at the microscopic level of amorphous silicon-germanium-alloy films deposited under various conditions to assist researchers to produce higher quality films. The method has been a joint theoretical and experimental approach to the correlation of NMR, ESR, and other characterizations, especially relating to rearrangements of hydrogen. Deuteron magnetic resonance reveals the presence of (and changes in) tightly bonded hydrogen (deuterium), weakly bonded hydrogen, molecular hydrogen, and rotating silyl groups. Microvoids are investigated via observation of para D/sub 2/ for which /Delta/M/sub J/ transitions are frozen out. Solid echoes reveal HD and ortho D/sub 2/ trapped as singles in the semiconductor matrix. Theoretical calculations show dangling bonds to be more likely than floating bonds. 23 refs., 11 figs.

  12. High-Sensitivity X-ray Polarimetry with Amorphous Silicon Active-Matrix Pixel Proportional Counters

    Science.gov (United States)

    Black, J. K.; Deines-Jones, P.; Jahoda, K.; Ready, S. E.; Street, R. A.

    2003-01-01

    Photoelectric X-ray polarimeters based on pixel micropattern gas detectors (MPGDs) offer order-of-magnitude improvement in sensitivity over more traditional techniques based on X-ray scattering. This new technique places some of the most interesting astronomical observations within reach of even a small, dedicated mission. The most sensitive instrument would be a photoelectric polarimeter at the focus of 2 a very large mirror, such as the planned XEUS. Our efforts are focused on a smaller pathfinder mission, which would achieve its greatest sensitivity with large-area, low-background, collimated polarimeters. We have recently demonstrated a MPGD polarimeter using amorphous silicon thin-film transistor (TFT) readout suitable for the focal plane of an X-ray telescope. All the technologies used in the demonstration polarimeter are scalable to the areas required for a high-sensitivity collimated polarimeter. Leywords: X-ray polarimetry, particle tracking, proportional counter, GEM, pixel readout

  13. Laser annealing of amorphous/poly: Silicon solar cell material flight experiment

    Science.gov (United States)

    Cole, Eric E.

    1990-01-01

    The preliminary design proposed for the microelectronics materials processing equipment is presented. An overall mission profile, description of all processing steps, analysis methods and measurement techniques, data acquisition and storage, and a preview of the experimental hardware are included. The goal of the project is to investigate the viability of material processing of semiconductor microelectronics materials in a micro-gravity environment. The two key processes are examined: (1) Rapid Thermal Annealing (RTA) of semiconductor thin films and damaged solar cells, and (2) thin film deposition using a filament evaporator. The RTA process will be used to obtain higher quality crystalline properties from amorphous/poly-silicon films. RTA methods can also be used to repair radiation-damaged solar cells. On earth this technique is commonly used to anneal semiconductor films after ion-implantation. The damage to the crystal lattice is similar to the defects found in solar cells which have been exposed to high-energy particle bombardment.

  14. Acoustically induced optical second harmonic generation in hydrogenated amorphous silicon films

    CERN Document Server

    Ebothe, J; Cabarrocas, P R I; Godet, C; Equer, B

    2003-01-01

    Acoustically induced second harmonic generation (AISHG) in hydrogenated amorphous silicon (a-Si : H) films of different morphology has been observed. We have found that with increasing acoustical power, the optical SHG of Gd : YAB laser light (lambda = 2.03 mu m) increases and reaches its maximum value at an acoustical power density of about 2.10 W cm sup - sup 2. With decreasing temperature, the AISHG signal strongly increases below 48 K and correlates well with the temperature behaviour of differential scanning calorimetry indicating near-surface temperature phase transition. The AISHG maxima were observed at acoustical frequencies of 10-11, 14-16, 20-22 and 23-26 kHz. The independently performed measurements of the acoustically induced IR spectra have shown that the origin of the observed phenomenon is the acoustically induced electron-phonon anharmonicity in samples of different morphology.

  15. Amorphous/microcrystalline transition of thick silicon film deposited by PECVD

    Science.gov (United States)

    Elarbi, N.; Jemaï, R.; Outzourhit, A.; Khirouni, K.

    2016-06-01

    Thick silicon films were deposited by plasma-enhanced chemical vapor deposition at different plasma power densities. Annealing treatment was performed on these deposited films. As-deposited and annealed films were characterized by X-ray diffraction, Raman scattering spectroscopy and reflectance spectroscopy. Before annealing, only the film deposited at the plasma power density of 500 mW/cm2 exhibits a diffraction peak corresponding to the (111) plane orientation. Raman spectrum of this film confirms the presence of crystalline phase. After annealing, a transition from amorphous phase to crystalline one occurs for all samples. This transition is accompanied by an increase of the crystalline fraction volume deduced from Raman spectra analysis and by a reduction of optical gap energy.

  16. Hydrogen reverses the clustering tendency of carbon in amorphous silicon oxycarbide.

    Science.gov (United States)

    Ding, Hepeng; Demkowicz, Michael J

    2015-01-01

    Amorphous silicon oxycarbide (SiOC) is of great technological interest. However, its atomic-level structure is not well understood. Using density functional theory calculations, we show that the clustering tendency of C atoms in SiOC is extremely sensitive to hydrogen (H): without H, the C-C interaction is attractive, leading to enrichment of aggregated SiC4 tetrahedral units; with hydrogen, the C-C interaction is repulsive, leading to enrichment of randomly distributed SiCO3 tetrahedral units. Our results suggest that conflicting experimental characterizations of C distributions may be due to differing amounts of H present in the samples investigated. Our work also opens a path for tailoring the properties of SiOC by using the total H content to control the C distribution. PMID:26269200

  17. Electroless chemical grafting of nitrophenyl groups on n-doped hydrogenated amorphous silicon surfaces.

    Science.gov (United States)

    Kim, Chulki; Oh, Kiwon; Han, Seunghee; Kim, Kyungkon; Kim, Il Won; Kim, Heesuk

    2014-08-01

    The direct spontaneous grafting of 4-nitrophenyl molecules onto n-doped hydrogenated amorphous silicon (a-Si:H) surfaces without external ultraviolet, thermal, or electrochemical energy was invegtigated. Clean n-doped a-Si:H thin films were dipped in a solution of 4-nitrobenzenediazonium salts (PNBD) in acetonitrile. After the modified surfaces were rinsed, they were analyzed qualitatively and quantitatively by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). XPS and AFM results show that the reaction of an n-doped a-Si:H thin film with PNBD self-terminates without polymerization, after 5 h, and the surface number density of 4-nitrophenyl molecules is 4.2 x 10(15)/cm2. These results demonstrate that the spontaneous grafting of nitrophenyl layers onto n-doped a-Si:H thin films is an attractive pathway toward forming interfaces between a-Si:H and organic layers under ambient conditions. PMID:25936109

  18. Hydrogen-induced rupture of strained Si─O bonds in amorphous silicon dioxide.

    Science.gov (United States)

    El-Sayed, Al-Moatasem; Watkins, Matthew B; Grasser, Tibor; Afanas'ev, Valery V; Shluger, Alexander L

    2015-03-20

    Using ab initio modeling we demonstrate that H atoms can break strained Si─O bonds in continuous amorphous silicon dioxide (a-SiO(2)) networks, resulting in a new defect consisting of a threefold-coordinated Si atom with an unpaired electron facing a hydroxyl group, adding to the density of dangling bond defects, such as E' centers. The energy barriers to form this defect from interstitial H atoms range between 0.5 and 1.3 eV. This discovery of unexpected reactivity of atomic hydrogen may have significant implications for our understanding of processes in silica glass and nanoscaled silica, e.g., in porous low-permittivity insulators, and strained variants of a-SiO(2). PMID:25839289

  19. Periodic molybdenum disc array for light trapping in amorphous silicon layer

    Science.gov (United States)

    Wang, Jiwei; Yang, Kang; Chen, Haiyan; Deng, Changkai; Li, Dongdong; Chen, Xiaoyuan; Ren, Wei

    2016-05-01

    We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO2. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under light illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.

  20. Plasma optical emission spectroscopy diagnostic during amorphous silicon thin films deposition by Rf sputtering technique

    International Nuclear Information System (INIS)

    This paper deals with the study of the glow discharge, used for amorphous silicon thin films deposition by Rf sputtering technique. The produced plasma is investigated by mean of the optical emission spectroscopy (OES) analysis. Different plasmas obtained with changing the gas pressure and Rf powers were analysed at different positions in the inter-electrode space. Emission lines from Ar, Si, Si+ and Ar+ were observed in the visible region. It was found that emission intensities of all the observed lines have a spatial Gaussian shape. The maximum intensity is located in the core of the plasma and decrease in the electrodes region. The ratio between the Si and Ar+ intensities (ISi/IAr+), in the target region, is proposed as a new tool to estimate the Ar sputtering yield. This ratio was compared to the theoretical calculated sputtering yield. The difference between these two quantities is exploited to determine the contribution of fast Ar neutrals in the sputtering process.

  1. Picosecond and nanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Theodorakos, I.; Zergioti, I.; Tsoukalas, D.; Raptis, Y. S., E-mail: yraptis@central.ntua.gr [Physics Department, National Technical University of Athens, Heroon Polytechniou 9, 15780 Zographou, Athens (Greece); Vamvakas, V. [Heliosphera SA, Industrial Area of Tripolis, 8th Building Block, 5th Road, GR-221 00 Tripolis (Greece)

    2014-01-28

    In this work, a picosecond diode pumped solid state laser and a nanosecond Nd:YAG laser have been used for the annealing and the partial nano-crystallization of an amorphous silicon layer. These experiments were conducted as an alternative/complementary to plasma-enhanced chemical vapor deposition method for fabrication of micromorph tandem solar cell. The laser experimental work was combined with simulations of the annealing process, in terms of temperature distribution evolution, in order to predetermine the optimum annealing conditions. The annealed material was studied, as a function of several annealing parameters (wavelength, pulse duration, fluence), as far as it concerns its structural properties, by X-ray diffraction, SEM, and micro-Raman techniques.

  2. Visible Absorption Properties of Retinoic Acid Controlled on Hydrogenated Amorphous Silicon Thin Film

    Science.gov (United States)

    Tsujiuchi, Yutaka; Masumoto, Hiroshi; Goto, Takashi

    2008-02-01

    Langmuir-Blodgett (LB) films of retinoic acid and LB films of retinoic acid mixed with a peptide that contains an alanine-lysine-valine (AKV) amino acid sequence deposited on a hydrogenated amorphous silicon (a-Si:H) film prepared by electron cyclotron resonance (ECR) plasma sputtering were fabricated, and their light absorption spectrums were compared. A specific visible light absorption at approximately 500 nm occurred in a film that had a film thickness of more than 80 nm and a hydrogen concentration of more than 20% in the sputtering process gas. Mixing the AKV sequence peptide with retinoic acid caused a 6 nm blueshift, from 363 to 357 nm, of the absorption maximum of the composite LB film on a SiO2 substrate. Using the same peptide, a large 30 nm blueshift, from 500 to 470 nm, was induced in the composite LB film on the a-Si:H film.

  3. Fabrication And Determination Of Coefficient Absorption Of Hydrogenated Amorphous Silicon By Direct Evaporation Method

    International Nuclear Information System (INIS)

    Fabrication and characterization of hydrogenated amorphous silicon produced by direct evaporation method have been done. The experiment was carried out at pressure conditions of 2 x 10-5 torr, RF frequency of 13.56 MHz, hydrogen gas flow of 0,8 1/minute, electrode distance of 2.48 cm. voltage electrode of 700 volt and evaporation time 1.45 minute. Using UV-VIS spectrophotometer, it is found that at wavelength of 359 nm, the absorbance degree of material that was by direct hydrogenated method was 0,886. This means that more hydrogen are absorbed by direct method While, if the hydrogenation is carried out by means of indirect method, the degree of absorbance at the wavelength of 359 nm is 0,103. From this result, it can be concluded that the direct methods is better than indirect method

  4. AFM and STM investigations of hydrogenated amorphous silicon: topography and barrier heights

    Energy Technology Data Exchange (ETDEWEB)

    Herion, J. [Forschungszentrum Juelich GmbH (Germany). Inst. fuer Schicht- und Ionentechnik; Szot, K. [Silesian Univ., Katowice (Poland); Barzen, S. [Colorado Univ., Boulder, CO (United States). Joint Inst. for Laboratory Astrophysics; Siebke, F. [Forschungszentrum Juelich GmbH (Germany). Inst. fuer Schicht- und Ionentechnik; Teske, M. [Forschungszentrum Juelich GmbH (Germany). Inst. fuer Grenzflaechenforschung und Vakuumphysik

    1997-05-01

    As-grown films of hydrogenated amorphous silicon (a-Si : H, highly phosphorous-doped) were investigated by atomic force microscopy (AFM) and scanning tunneling microscopy (STM). Hills up to 10 nm in height and 10 to 20 nm in diameter have been observed by AFM. By using STM in a new high-sensitivity mode, (1) atomically smooth areas (roughness about 0.3 A rms) which occur at the top of the hills, (2) subnanometer structures several A in height which cover large parts of the surface have been identified. Simultaneous measurements of the local apparent barrier heights (LABH) show a clear correlation to the topography. Areas showing subnanometer structures have always low LABHs while the highest values of the LABH occur on the smooth areas. (orig.). With 5 figs.

  5. Enhanced light trapping with double-groove grating in thin-film amorphous silicon solar cells

    Science.gov (United States)

    Wu, Jun

    2016-05-01

    A design to enhance light absorption in thin-film amorphous silicon (a-Si) solar cells is proposed. It is achieved by patterning a double-groove grating with waveguide layer as the absorbing layer and coating a double-groove grating anti-reflective layer in the front window of the cell. The broadband absorption under normal incidence can be achieved for both TE and TM polarizations. It is shown that the averaged integrated absorptions have very large angle independence for the optimized solar cell. An qualitative understanding of such broadband enhanced absorption effect, which is attributed to the guided mode resonance, is presented. The conclusions can be exploited to guide the design of solar cells based on a grating structure.

  6. Using amorphous silicon solar cells to boost the viability of luminescent solar concentrators

    Energy Technology Data Exchange (ETDEWEB)

    Farrell, Daniel J. [Physics Department, Imperial College London, South Kensington campus, SW7 2AZ, London (United Kingdom); Sark, Wilfried G.J.H.M. van [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics - Physics of Devices, P.O. Box 80000, 3508 TA Utrecht (Netherlands); Utrecht University, Copernicus Institute for Sustainable Development and Innovation, Science, Technology and Society, Heidelberglaan 2, 3584 CS Utrecht (Netherlands); Velthuijsen, Steven T.; Schropp, Ruud E.I. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics - Physics of Devices, P.O. Box 80000, 3508 TA Utrecht (Netherlands)

    2010-04-15

    We have, for the first time, designed and fabricated hydrogenated amorphous silicon solar cells to be used in conjunction with Luminescent Solar Concentrators (LSCs). LSCs are planar plastic sheets doped with organic dyes that absorb solar illumination and down shift the energy to narrowband luminescence which is collected by solar cells attached to the sheet edge. We fabricated an LSC module with two bonded solar cells and performed characterisation with the cells connected in series and parallel configurations. We find that the LSC module has an optical collection efficiency of 9.5% and an optimum power conversion efficiency of approaching 1% when the cells are in a parallel connection. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Photon counting pixel and array in amorphous silicon technology for large area digital medical imaging applications

    Science.gov (United States)

    Yazdandoost, Mohammad Y.; Shin, Kyung W.; Safavian, Nader; Taghibakhsh, Farhad; Karim, Karim S.

    2010-04-01

    A single photon counting Voltage Controlled Oscillator (VCO) based pixel architecture in amorphous silicon (a-Si) technology is reported for large area digital medical imaging. The VCO converts X-ray generated input charge into an output oscillating frequency signal. Experimental results for an in-house fabricated VCO circuit in a-Si technology are presented and external readout circuits to extract the image information from the VCO's frequency output are discussed. These readout circuits can be optimized to reduce the fixed pattern noise and fringing effects in an imaging array containing many such VCO pixels. Noise estimations, stability simulations and measurements for the fabricated VCO are presented. The reported architecture is particularly promising for large area photon counting applications (e.g. low dose fluoroscopy, dental computed tomography (CT)) due to its very low input referred electronic noise, high sensitivity and ease of fabrication in low cost a-Si technology.

  8. Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures.

    Science.gov (United States)

    Mughal, A; El Demellawi, J K; Chaieb, Sahraoui

    2014-12-14

    Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material's luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon.

  9. Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures

    KAUST Repository

    Mughal, Asad Jahangir

    2014-01-01

    Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material\\'s luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon. This journal is

  10. Uncooled amorphous silicon IRFPA for high performance and high volume applications

    Science.gov (United States)

    Pochic, D.; Durand, A.; Tissot, J. L.; Crastes, A.; Vilain, M.; Legras, O.; Tinnes, S.; Minassian, C.; Robert, P.

    2009-09-01

    For more than 10 years now, uncooled sensors have given new opportunities in the IR field of applications by being able to be produce in large volume. Compared to cooled technology, uncooled detectors offer many interesting advantages: high reliability, lower cost ... whereas the performance is high enough for a lot of applications. Thermography, building inspection, enhanced driver vision and military (thermal weapon sight, low altitude UAV sensor) are applications which can be provided with affordable IR focal plane arrays... As uncooled IR sensors are mainly dedicated to these high volume applications, any uncooled IRFPA technology has to be able to provide high performance sensors but also to be producible in large volume at a minimum cost. The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon layer enables ULIS to develop a full range of IRFPA formats from 160x120 to 1024x768 pixels with 25μm and 17μm pixel-pitch, designed for high end and high volume applications. The detector ROIC designs rely on a simple architecture (detector configuration addressed by a serial link for user defined amplifier gain, windowing capability...) which enables easier systems upgrade and therefore a reduced system development non recurrent cost. The packaging technique depends on the application environment and the production volume in order to fit with the market expectation. Starting from metallic and ceramics package, very advanced new technique is under development in order to reduce uncooled IRFPA production cost. NETD in the range of 30mK (f/1, 300K, 60Hz) as well as operability higher than 99.99%, are routinely achieved with amorphous silicon technology.

  11. A hybrid solar cell fabricated using amorphous silicon and a fullerene derivative.

    Science.gov (United States)

    Yun, Myoung Hee; Jang, Ji Hoon; Kim, Kyung Min; Song, Hee-eun; Lee, Jeong Chul; Kim, Jin Young

    2013-12-01

    Hybrid solar cells, based on organic and inorganic semiconductors, are a promising way to enhance the efficiency of solar cells because they make better use of the solar spectrum and are straightforward to fabricate. We report on a new hybrid solar cell comprised of hydrogenated amorphous silicon (a-Si:H), [6,6]-phenyl-C71-butyric acid methyl ester ([71]PCBM), and poly-3,4-ethylenedioxythiophene poly styrenesulfonate (PEDOT:PSS). The properties of these PEDOT:PSS/a-Si:H/[71]PCBM devices were studied as a function of the thickness of the a-Si:H layer. It was observed that the open circuit voltage and the short circuit current density of the device depended on the thickness of the a-Si:H layer. Under simulated one sun AM 1.5 global illumination (100 mW cm(-2)), a power conversion efficiency of 2.84% was achieved in a device comprised of a 274 nm-thick layer of a-Si:H; this is the best performance achieved to date for a hybrid solar cell made of amorphous Si and organic materials. PMID:24149894

  12. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

    Science.gov (United States)

    Arezki, Hakim; Boutchich, Mohamed; Alamarguy, David; Madouri, Ali; Alvarez, José; Cabarrocas, Pere Roca i.; Kleider, Jean-Paul; Yao, Fei; Lee, Young Hee

    2016-10-01

    Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO2/Si substrates, capped by n- or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω sq-1 to 1260 Ω sq-1 for the (p)-a-Si:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm2 V-1 s-1 indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or display applications.

  13. Hydrogenated Amorphous Silicon Sensor Deposited on Integrated Circuit for Radiation Detection

    CERN Document Server

    Despeisse, M; Jarron, P; Kaplon, J; Moraes, D; Nardulli, A; Powolny, F; Wyrsch, N

    2008-01-01

    Radiation detectors based on the deposition of a 10 to 30 mum thick hydrogenated amorphous silicon (a-Si:H) sensor directly on top of integrated circuits have been developed. The performance of this detector technology has been assessed for the first time in the context of particle detectors. Three different circuits were designed in a quarter micron CMOS technology for these studies. The so-called TFA (Thin-Film on ASIC) detectors obtained after deposition of a-Si:H sensors on the developed circuits are presented. High internal electric fields (104 to 105 V/cm) can be built in the a-Si:H sensor and overcome the low mobility of electrons and holes in this amorphous material. However, the deposited sensor's leakage current at such fields turns out to be an important parameter which limits the performance of a TFA detector. Its detailed study is presented as well as the detector's pixel segmentation. Signal induction by generated free carrier motion in the a-Si:H sensor has been characterized using a 660 nm pul...

  14. Silicon and aluminum doping effects on the microstructure and properties of polymeric amorphous carbon films

    Science.gov (United States)

    Liu, Xiaoqiang; Hao, Junying; Xie, Yuntao

    2016-08-01

    Polymeric amorphous carbon films were prepared by radio frequency (R.F. 13.56 MHz) magnetron sputtering deposition. The microstructure evolution of the deposited polymeric films induced by silicon (Si) and aluminum(Al) doping were scrutinized through infrared spectroscopy, multi-wavelength Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The comparative results show that Si doping can enhance polymerization and Al doping results in an increase in the ordered carbon clusters. Si and Al co-doping into polymeric films leads to the formation of an unusual dual nanostructure consisting of cross-linked polymer-like hydrocarbon chains and fullerene-like carbon clusters. The super-high elasticity and super-low friction coefficients (<0.002) under a high vacuum were obtained through Si and Al co-doping into the films. Unconventionally, the co-doped polymeric films exhibited a superior wear resistance even though they were very soft. The relationship between the microstructure and properties of the polymeric amorphous carbon films with different elements doping are also discussed in detail.

  15. Amorphous and microcrystalline silicon applied in very thin tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schicho, Sandra

    2011-07-28

    Thin-film solar cells are fabricated by low-cost production processes, and are therefore an alternative to conventionally used wafer solar cells based on crystalline silicon. Due to the different band gaps, tandem cells that consist of amorphous (a-Si:H) and microcrystalline ({mu}c-Si:H) single junction solar cells deposited on top of each other use the solar spectrum much more efficient than single junction solar cells. The silicon layers are usually deposited on TCO (Transparent Conductive Oxide)-coated glass and metal- or plastic foils. Compared to the CdTe and CIGS based thin-film technologies, silicon thin-film solar cells have the advantage that no limitation of raw material supply is expected and no toxic elements are used. Nevertheless, the production cost per Wattpeak is the decisive factor concerning competitiveness and can be reduced by, e.g., shorter deposition times or reduced material consumption. Both cost-reducing conceptions are simultaneously achieved by reducing the a-Si:H and {mu}c-Si:H absorber layer thicknesses in a tandem device. In the work on hand, the influence of an absorber layer thickness reduction up to 77% on the photovoltaic parameters of a-Si:H/{mu}c-Si:H tandem solar cells was investigated. An industry-oriented Radio Frequency Plasma-Enhanced Chemical Vapour Deposition (RF-PECVD) system was used to deposit the solar cells on glass substrates coated with randomly structured TCO layers. The thicknesses of top and bottom cell absorber layers were varied by adjusting the deposition time. Reduced layer thicknesses lead to lower absorption and, hence, to reduced short-circuit current densities which, however, are partially balanced by higher open-circuit voltages and fill factors. Furthermore, by using very thin amorphous top cells, the light-induced degradation decreases tremendously. Accordingly, a thickness reduction of 75% led to an efficiency loss of only 21 %. By adjusting the parameters for the deposition of a-Si:H top cells, a

  16. Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

    Directory of Open Access Journals (Sweden)

    Taweewat Krajangsang

    2014-01-01

    Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

  17. Coupled thermal/structural analyses of laser powered glass sealing methods for fiber optic and flat panel display applications

    Energy Technology Data Exchange (ETDEWEB)

    Chambers, R.S.; Gianoulakis, S.E.

    1996-12-31

    Glasses are used extensively by the electronics industry for packaging and in components. Because glasses have such low fracture toughness, glass components must maintain low tensile stresses to avoid cracking and ensure product stability. Modeling is a key tool for developing designs with low tensile stresses. Thermoelastic analyses are ideal for modeling slow, oven controlled processes where the temperature varies uniformly. Many processing environments, however, involve rapid heating and cooling cycles that produce nonhomogeneous temperature fields causing the volume and stresses in the glass to relax at different rates. This structural relaxation is an important nonlinear material behavior that gives rise to a point-to-point variability in effective properties of the material. To accurately model such stresses, a thermal analysis must be coupled to a structural analysis that employs a viscoelastic model of glass. Laser sealing of glasses is an example of a process where thermal history is an important factor in determining the residual stress state. Recent needs to consider laser sealing methods for fiber optic connectors and flat panel displays have spurred the development of coupled, three-dimensional thermal and structural finite element codes. Analyses of the temperatures and stresses generated in a flat panel display during a laser sealing operation are presented, an the idiosyncrasies and importance of modeling coupled thermal/structural phenomena are discussed.

  18. Dynamic modeling of the microalgae cultivation phase for energy production in open raceway ponds and flat panel photobioreactors

    Directory of Open Access Journals (Sweden)

    Matteo eMarsullo

    2015-09-01

    Full Text Available A dynamic model of microalgae cultivation phase is presented in this work. Two cultivation technologies are taken into account: the open raceway pond and the flat panel photobioreactor. For each technology, the model is able to evaluate the microalgae areal and volumetric productivity and the energy production and consumption. Differently from the most common existing models in literature, which deal with a specific part of the overall cultivation process, the model presented here includes all physical and chemical quantities that mostly affect microalgae growth: the equation of the specific growth rate for the microalgae is influenced by CO2 and nutrients concentration in the water, light intensity, temperature of the water in the reactor and by the microalgae species being considered. All these input parameters can be tuned to obtain reliable predictions. A comparison with experimental data taken from the literature shows that the predictions are consistent, slightly overestimating the productivity in case of closed photobioreactor. The results obtained by the simulation runs are consistent with those found in literature, being the areal productivity for the open raceway pond between 50 and 70 t/(ha*year in Southern Spain (Sevilla and Brazil (Petrolina and between 250 and 350 t/(ha*year for the flat panel photobioreactor in the same locations.

  19. Use of personal digital assistants for retrieval of medical images and data on high-resolution flat panel displays.

    Science.gov (United States)

    Ratib, Osman; McCoy, J Michael; McGill, D Ric; Li, Minglin; Brown, Allen

    2003-01-01

    For its new acute care hospital, the University of California at Los Angeles is evaluating innovative technology involving high-resolution flat panel display devices configured as "network appliances" that can be wall mounted for use in the retrieval and display of medical images and data. Physicians and healthcare providers can log on with wireless handheld computers, which can serve as an identification device as well as a navigational tool for selecting patient records and data. These data are displayed and manipulated on the flat panel display without the need for a keyboard or mouse. A prototype was developed with commercially available image display software, which was modified to allow the remote control of software functions from a handheld device through an infrared communication port. The system also allows navigation through the patient data in a World Wide Web-based electronic patient record. This prototype illustrates the evolution of radiologic facilities toward "shareable" high-quality display devices that allow more convenient and cost-effective access to medical images and related data in complex clinical environments, resulting in a paradigm shift in data navigation and accessibility.

  20. An amorphous phase formation at palladium / silicon oxide (Pd/SiO{sub x}) interface through electron irradiation - electronic excitation process

    Energy Technology Data Exchange (ETDEWEB)

    Nagase, Takeshi, E-mail: t-nagase@uhvem.osaka-u.ac.jp [Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, 7-1, Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1, Yamada-Oka, Suita, Osaka 565-0871 (Japan); Yamashita, Ryo; Yabuuchi, Atsushi [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1, Yamada-Oka, Suita, Osaka 565-0871 (Japan); Lee, Jung-Goo [Powder & Ceramics Division, Korea Institute of Materials Science, 66 Sangnam-dong, Changwon, Kyungsangnam-Do 641-101 (Korea, Republic of)

    2015-11-15

    A Pd-Si amorphous phase was formed at a palladium/silicon oxide (Pd/SiO{sub x}) interface at room temperature by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Solid-state amorphization was stimulated without the electron knock-on effects. The total dose required for the solid-state amorphization decreases with decreasing acceleration voltage. This is the first report on electron irradiation induced metallic amorphous formation caused by the electronic excitation at metal/silicon oxide interface.