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Sample records for amorphous silicon films

  1. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    TECS

    flexible triple junction, amorphous silicon solar cells. At the Malaysia Energy Centre (MEC), we fabricated triple junction amorphous silicon solar cells (up to 12⋅7% efficiency (Wang et al 2002)) and laser-interconnected modules on steel, glass and polyimide substrates. A major issue encountered is the adhesion of thin film ...

  2. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    TECS

    Abstract. A major issue encountered during fabrication of triple junction a-Si solar cells on polyimide sub- strates is the adhesion of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous silicon solar cells made on different polyimide substrates (Kapton VN, Upilex-S and ...

  3. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    A major issue encountered during fabrication of triple junction -Si solar cells on polyimide substrates is the adhesion of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous silicon solar cells made on different polyimide substrates (Kapton VN, Upilex-S and Gouldflex), and the ...

  4. Amorphous silicon films doped with BF3 and PF5

    International Nuclear Information System (INIS)

    Ortiz, A.; Muhl, S.; Sanchez, A.; Monroy, R.; Pickin, W.

    1984-01-01

    By using gaseous discharge process, thin films of hydrogenated amorphous silicon (a-Si:H) were produced. This process consists of Silane (SiH 4 ) decomposition at low pressure, in a chamber. (A.C.A.S.) [pt

  5. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  6. Electronic properties of intrinsic and doped amorphous silicon carbide films

    Energy Technology Data Exchange (ETDEWEB)

    Vetter, M. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain)]. E-mail: mvetter@eel.upc.edu; Voz, C. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Ferre, R. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Martin, I. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Orpella, A. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Puigdollers, J. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Andreu, J. [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E-08028 Barcelona (Spain); Alcubilla, R. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain)

    2006-07-26

    Hydrogenated amorphous silicon carbide (a-SiC{sub x} : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was investigated. It is found that homogenous deposition with effective surface recombination velocity lower than 100 cms{sup -1} is possible up to 6'' diameter in a simple parallel plate reactor by optimizing deposition parameters. For application in solar cell processes the conductivity of these a-SiC{sub x} : H films might become of importance since good surface passivation results from field-effect passivation which needs an insulating dielectric layer. Therefore, the temperature dependence of the dark dc conductivity of these films was investigated in the temperature range from - 20 to 260 deg. C. Two transition temperatures, T {sub s}{approx}80 deg. C and T {sub s}{approx}170 deg. C, were found where conductivity increases, resp. decreases over-exponential. From Arrhenius plots activation energy (E {sub a}) and conductivity pre-factor ({sigma} {sub 0}) were calculated for a large number of samples with different composition. A correlation between E {sub a} and {sigma} {sub 0} was found giving a Meyer-Neldel relation with a slope of 59 mV, corresponding to a material characteristic temperature T {sub m} = 400 deg. C, and an intercept at {sigma} {sub 00} = 0.1 {omega}{sup -1}cm{sup -1}.

  7. Electronic properties of intrinsic and doped amorphous silicon carbide films

    International Nuclear Information System (INIS)

    Vetter, M.; Voz, C.; Ferre, R.; Martin, I.; Orpella, A.; Puigdollers, J.; Andreu, J.; Alcubilla, R.

    2006-01-01

    Hydrogenated amorphous silicon carbide (a-SiC x : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was investigated. It is found that homogenous deposition with effective surface recombination velocity lower than 100 cms -1 is possible up to 6'' diameter in a simple parallel plate reactor by optimizing deposition parameters. For application in solar cell processes the conductivity of these a-SiC x : H films might become of importance since good surface passivation results from field-effect passivation which needs an insulating dielectric layer. Therefore, the temperature dependence of the dark dc conductivity of these films was investigated in the temperature range from - 20 to 260 deg. C. Two transition temperatures, T s ∼80 deg. C and T s ∼170 deg. C, were found where conductivity increases, resp. decreases over-exponential. From Arrhenius plots activation energy (E a ) and conductivity pre-factor (σ 0 ) were calculated for a large number of samples with different composition. A correlation between E a and σ 0 was found giving a Meyer-Neldel relation with a slope of 59 mV, corresponding to a material characteristic temperature T m = 400 deg. C, and an intercept at σ 00 = 0.1 Ω -1 cm -1

  8. Optical characterisation of sputtered hydrogenated amorphous silicon thin films

    International Nuclear Information System (INIS)

    Mellassi, K.; Chafik El Idrissi, M.; Chouiyakh, A.; Rjeb, A.; Barhdadi, A.

    2000-09-01

    The present work is devoted to the study of some optical properties of hydrogenated amorphous silicon (a-Si:H) thin films prepared by radio-frequency cathodic sputtering technique. It is essentially focused on investigating separately the effects of increasing partial hydrogen pressure during the deposition stage, and the effects of post deposition thermal annealing on the main optical parameters of the deposited layers (refraction index, optical gap Urbach energy, etc.). We show that low hydrogen pressures allow a saturation of the dangling bonds in the material, while high pressures lead to the creation of new defects. We also show that thermal annealing under moderate temperatures allows a good improvement of the structural quality of deposited films. (author)

  9. Crystallization of HWCVD amorphous silicon thin films at elevated temperatures

    CSIR Research Space (South Africa)

    Muller, TFG

    2006-01-01

    Full Text Available Hot-wire chemical vapour deposition (HWCVD) has been used to prepare both hydrogenated amorphous silicon (a-Si:H) and nano/ microcrystalline thin layers as intrinsic material at different deposition conditions, in order to establish optimum...

  10. Ideality and Tunneling Level Systems (TLS) in amorphous silicon films.

    Science.gov (United States)

    Hellman, Frances

    Heat capacity, sound velocity, and internal friction of covalently bonded amorphous silicon (a-Si) films with and without hydrogen show that low energy excitations commonly called tunneling or two level systems (TLS) can be tuned over nearly 3 decades, from below detectable limits to the range commonly seen in glassy systems. This tuning is accomplished by growth temperature, thickness, growth rate, light soaking or annealing. We see a strong correlation with atomic density in a-Si and in literature analysis of other glasses, as well as with dangling bond density, sound velocity, and bond angle distribution as measured by Raman spectroscopy, but TLS density varies by orders of magnitude while these other measures of disorder vary by less than a factor of two. The lowest TLS films are grown at temperatures near 0.8 of the theoretical glass transition temperature of Si, similar to work on polymer films and suggestive that the high surface mobility at relatively low temperature of vapor deposition can produce materials close to an ideal glass, with higher density, lower energy, and low TLS due to fewer nearby configurations with similarly low energy. The TLS measured by heat capacity and internal friction are strongly correlated for pure a-Si, but not for hydrogenated a-Si, suggesting that the standard TLS model works for a-Si, but that a-Si:H possess TLS that are decoupled from the acoustic waves measured by internal friction. Internal friction measures those TLS that introduce mechanical damping; we are in the process of measuring low T dielectric loss which yield TLS with dipole moments in order to explore the correlation between different types of TLS. Additionally, a strong correlation is found between an excess T3 term (well above the sound velocity-derived Debye contribution) and the linear term in heat capacity, suggesting a common origin. I thank members of my research group and my collaborators for contributions to this work and NSF-DMR-1508828 for support.

  11. Thin-film amorphous silicon germanium solar cells with p-and n-type hydrogenated silicon oxide layers

    NARCIS (Netherlands)

    Si, F.T.; Isabella, O.; Zeman, M.

    2017-01-01

    Mixed-phase hydrogenated silicon oxide (SiOx:H) is applied to thin-film hydrogenated amorphous silicon germanium (a-SiGe:H) solar cells serving as both p-doped and n-doped layers. The bandgap of p-SiOx:H is adjusted to achieve a highly-transparent window layer while also providing a strong electric

  12. Amorphous silicon-carbon based nano-scale thin film anode materials for lithium ion batteries

    International Nuclear Information System (INIS)

    Datta, Moni Kanchan; Maranchi, Jeffrey; Chung, Sung Jae; Epur, Rigved; Kadakia, Karan; Jampani, Prashanth; Kumta, Prashant N.

    2011-01-01

    Research highlights: → Thin film amorphous C/Si. Good cycling response validates carbon matrix for Silicon anodes. → Thin film amorphous C/Si/C. Good cycling response validates carbon as an interface and matrix. - Abstract: The buffering effect of carbon on the structural stability of amorphous silicon films, used as an anode for lithium ion rechargeable batteries, has been studied during long term discharge/charge cycles. To this extent, the electrochemical performance of a prototype material consisting of amorphous Si thin film (∼250 nm) deposited by radio frequency magnetron sputtering on amorphous carbon (∼50 nm) thin films, denoted as a-C/Si, has been investigated. In comparison to pure amorphous Si thin film (a-Si) which shows a rapid fade in capacity after 30 cycles, the a-C/Si exhibits excellent capacity retention displaying ∼0.03% fade in capacity up to 50 cycles and ∼0.2% after 50 cycles when cycled at a rate of 100 μA/cm 2 (∼C/2) suggesting that the presence of thin amorphous C layer deposited between the Cu substrate and a-Si acts as a buffer layer facilitating the release of the volume induced stresses exhibited by pure a-Si during the charge/discharge cycles. This structural integrity combined with microstructural stability of the a-C/Si thin film during the alloying/dealloying process with lithium has been confirmed by scanning electron microscopy (SEM) analysis. The buffering capacity of the thin amorphous carbon layer lends credence to its use as the likely compliant matrix to curtail the volume expansion related cracking of silicon validating its choice as the matrix for bulk and thin film battery systems.

  13. Enhanced photoluminescence from ring resonators in hydrogenated amorphous silicon thin films at telecommunications wavelengths.

    Science.gov (United States)

    Patton, Ryan J; Wood, Michael G; Reano, Ronald M

    2017-11-01

    We report enhanced photoluminescence in the telecommunications wavelength range in ring resonators patterned in hydrogenated amorphous silicon thin films deposited via low-temperature plasma enhanced chemical vapor deposition. The thin films exhibit broadband photoluminescence that is enhanced by up to 5 dB by the resonant modes of the ring resonators due to the Purcell effect. Ellipsometry measurements of the thin films show a refractive index comparable to crystalline silicon and an extinction coefficient on the order of 0.001 from 1300 nm to 1600 nm wavelengths. The results are promising for chip-scale integrated optical light sources.

  14. Hydrogen diffusion and induced-crystallization in intrinsic and doped hydrogenated amorphous silicon films

    International Nuclear Information System (INIS)

    Kail, F.; Hadjadj, A.; Roca i Cabarrocas, P.

    2005-01-01

    We have studied the evolution of the structure of intrinsic and doped hydrogenated amorphous silicon films exposed to a hydrogen plasma. For this purpose, we combine in situ spectroscopic ellipsometry and secondary ion mass spectrometry measurements. We show that hydrogen diffuses faster in boron-doped hydrogenated amorphous silicon than in intrinsic samples, leading to a thicker subsurface layer from the early stages of hydrogen plasma exposure. At longer times, hydrogen plasma leads to the formation of a microcrystalline layer via chemical transport, but there is no evidence for crystallization of the a-Si:H substrate. Moreover, we observe that once the microcrystalline layer is formed, hydrogen diffuses out of the sample

  15. Fabrication of amorphous silicon nanoribbons by atomic force microscope tip-induced local oxidation for thin film device applications

    International Nuclear Information System (INIS)

    Pichon, L; Rogel, R; Demami, F

    2010-01-01

    We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as a mask for the elaboration of a thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as a mask during plasma etching of the amorphous layer leading to the formation of a nanoribbon. Such an amorphous silicon nanoribbon is used for the fabrication of the resistor

  16. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio, R., E-mail: rambrosi@uacj.mx [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Moreno, M.; Torres, A. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Carrillo, A. [Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Vivaldo, I.; Cosme, I. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Heredia, A. [Universidad Popular Autónoma del Estado de Puebla, Puebla (Mexico)

    2015-09-15

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σ{sub dark} changed by 5 order of magnitude under illumination, V{sub d} was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH{sub 4}, H{sub 2}, Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σ{sub RT}), activation energy (E{sub a}), and optical band gap (E{sub g}). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications.

  17. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    International Nuclear Information System (INIS)

    Ambrosio, R.; Moreno, M.; Torres, A.; Carrillo, A.; Vivaldo, I.; Cosme, I.; Heredia, A.

    2015-01-01

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σ dark changed by 5 order of magnitude under illumination, V d was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH 4 , H 2 , Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σ RT ), activation energy (E a ), and optical band gap (E g ). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications

  18. Study of some structural properties of hydrogenated amorphous silicon thin films prepared by radiofrequency cathodic sputtering

    International Nuclear Information System (INIS)

    Mellassi, K.; Chafik El Idrissi, M.; Barhdadi, A.

    2001-08-01

    In this work, we have used the grazing X-rays reflectometry technique to characterise hydrogenated amorphous silicon thin films deposited by radio-frequency cathodic sputtering. Relfectometry measurements are taken immediately after films deposition as well as after having naturally oxidised their surfaces during a more or less prolonged stay in the ambient. For the films examined just after deposition, the role of hydrogen appears in the increase of their density. For those analysed after a short stay in the ambient, hydrogen plays a protective role against the oxidation of their surfaces. This role disappears when the stay in the ambient is so long. (author)

  19. Photodecomposition of Hg - Photo - CVD monosilane. Application to hydrogenated amorphous silicon thin films

    International Nuclear Information System (INIS)

    Aka, B.

    1989-04-01

    The construction of a Hg-photo-CVD device is discussed. The system enables the manufacturing of hydrogenous thin films of amorphous silicon from monosilane compound. The reaction mechanisms taking place in the gaseous phase and at the surface, and the optimal conditions for the amorphous silicon film growth are studied. The analysis technique is based on the measurement of the difference between the condensation points of the gaseous components of the mixture obtained from the monosilane photolysis. A kinetic simplified model is proposed. Conductivity measurements are performed and the heat treatment effects are analyzed. Trace amounts of oxygen and carbon are found in the material. No Hg traces are detected by SIMS analysis [fr

  20. Thermal conductivity of amorphous and nanocrystalline silicon films prepared by hot-wire chemical-vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jugdersuren, B.; Kearney, B. T.; Queen, D. R.; Metcalf, T. H.; Culbertson, J. C.; Chervin, C. N.; Stroud, R. M.; Nemeth, W.; Wang, Q.; Liu, Xiao

    2017-07-01

    We report 3..omega.. thermal conductivity measurements of amorphous and nanocrystalline silicon thin films from 85 to 300 K prepared by hot-wire chemical-vapor deposition, where the crystallinity of the films is controlled by the hydrogen dilution during growth. The thermal conductivity of the amorphous silicon film is in agreement with several previous reports of amorphous silicon prepared by a variety of deposition techniques. The thermal conductivity of the as-grown nanocrystalline silicon film is 70% higher and increases 35% more after an anneal at 600 degrees C. They all have similarly weak temperature dependence. Structural analysis shows that the as-grown nanocrystalline silicon is approximately 60% crystalline, nanograins and grain boundaries included. The nanograins, averaging 9.1 nm in diameter in the as-grown film, are embedded in an amorphous matrix. The grain size increases to 9.7 nm upon annealing, accompanied by the disappearance of the amorphous phase. We extend the models of grain boundary scattering of phonons with two different non-Debye dispersion relations to explain our result of nanocrystalline silicon, confirming the strong grain size dependence of heat transport for nanocrystalline materials. However, the similarity in thermal conductivity between amorphous and nanocrystalline silicon suggests the heat transport mechanisms in both structures may not be as dissimilar as we currently understand.

  1. Effect of low level doping of boron and phosphorus on the properties of amorphous silicon films

    International Nuclear Information System (INIS)

    Tran, N.T.; Epstein, K.A.; Grimmer, D.P.; Vernstrom, G.D.

    1987-01-01

    Effect of the low level doping of boron and phosphorus on the properties of amorphous silicon films (a-Si:H) were studied. Doping level of both boron and phosphorus was in the range of 10/sup 17/ atoms/cm/sup 3/. Apparent improvement in the stability of dark and photoconductivity of a-Si: films upon low level doping does not result from the elimination of light-induced defects. The stability of the dark and photoconductivity upon doping is an indication of pinning of the Fermi level

  2. Spatially localized current-induced crystallization of amorphous silicon films

    Czech Academy of Sciences Publication Activity Database

    Rezek, Bohuslav; Šípek, Emil; Ledinský, Martin; Krejza, P.; Stuchlík, Jiří; Fejfar, Antonín; Kočka, Jan

    2008-01-01

    Roč. 354, 19-25 (2008), s. 2305-2309 ISSN 0022-3093 R&D Projects: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : silicon * crystallization * atomic force and scanning tunneling microscopy * nanocrystals Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.449, year: 2008

  3. Aluminium-induced crystallization of amorphous silicon films deposited by DC magnetron sputtering on glasses

    International Nuclear Information System (INIS)

    Kezzoula, F.; Hammouda, A.; Kechouane, M.; Simon, P.; Abaidia, S.E.H.; Keffous, A.; Cherfi, R.; Menari, H.; Manseri, A.

    2011-01-01

    Amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) films were deposited by DC magnetron sputtering technique with argon and hydrogen plasma mixture on Al deposited by thermal evaporation on glass substrates. The a-Si/Al and a-Si:H/Al thin films were annealed at different temperatures ranging from 250 to 550 deg. C during 4 h in vacuum-sealed bulb. The effects of annealing temperature on optical, structural and morphological properties of as-grown as well as the vacuum-annealed a-Si/Al and a-Si:H/Al thin films are presented in this contribution. The averaged transmittance of a-Si:H/Al film increases upon increasing the annealing temperature. XRD measurements clearly evidence that crystallization is initiated at 450 deg. C. The number and intensity of diffraction peaks appearing in the diffraction patterns are more important in a-Si:H/Al than that in a-Si/Al layers. Results show that a-Si:H films deposited on Al/glass crystallize above 450 deg. C and present better crystallization than the a-Si layers. The presence of hydrogen induces an improvement of structural properties of poly-Si prepared by aluminium-induced crystallization (AIC).

  4. Effect of starting point formation on the crystallization of amorphous silicon films by flash lamp annealing

    Science.gov (United States)

    Sato, Daiki; Ohdaira, Keisuke

    2018-04-01

    We succeed in the crystallization of hydrogenated amorphous silicon (a-Si:H) films by flash lamp annealing (FLA) at a low fluence by intentionally creating starting points for the trigger of explosive crystallization (EC). We confirm that a partly thick a-Si part can induce the crystallization of a-Si films. A periodic wavy structure is observed on the surface of polycrystalline silicon (poly-Si) on and near the thick parts, which is a clear indication of the emergence of EC. Creating partly thick a-Si parts can thus be effective for the control of the starting point of crystallization by FLA and can realize the crystallization of a-Si with high reproducibility. We also compare the effects of creating thick parts at the center and along the edge of the substrates, and a thick part along the edge of the substrates leads to the initiation of crystallization at a lower fluence.

  5. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    International Nuclear Information System (INIS)

    Li, Da; Kunz, Thomas; Wolf, Nadine; Liebig, Jan Philipp; Wittmann, Stephan; Ahmad, Taimoor; Hessmann, Maik T.; Auer, Richard; Göken, Mathias; Brabec, Christoph J.

    2015-01-01

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm 2 aperture area on the graphite substrate. The optical properties of the SiN x /a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiN x /a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiN x /a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance

  6. Elastic Measurements of Amorphous Silicon Films at mK Temperatures

    Science.gov (United States)

    Fefferman, Andrew; Maldonado, Ana; Collin, Eddy; Liu, Xiao; Metcalf, Tom; Jernigan, Glenn

    2017-06-01

    The low-temperature properties of glass are distinct from those of crystals due to the presence of poorly understood low-energy excitations. The tunneling model proposes that these are atoms tunneling between nearby equilibria, forming tunneling two-level systems (TLSs). This model is rather successful, but it does not explain the remarkably universal value of the mechanical dissipation Q^{-1} near 1 K. The only known exceptions to this universality are the Q^{-1} of certain thin films of amorphous silicon, carbon and germanium. Recently, it was found that Q^{-1} of amorphous silicon (a-Si) films can be reduced by two orders of magnitude by increasing the temperature of the substrate during deposition. According to the tunneling model, the reduction in Q^{-1} at 1 K implies a reduction in P0γ 2, where P0 is the density of TLSs and γ is their coupling to phonons. In this preliminary report, we demonstrate elastic measurements of a-Si films down to 20 mK. This will allow us, in future work, to determine whether P0 or γ is responsible for the reduction in Q^{-1} with deposition temperature.

  7. Investigation of the degradation of a thin-film hydrogenated amorphous silicon photovoltaic module

    Energy Technology Data Exchange (ETDEWEB)

    van Dyk, E.E.; Audouard, A.; Meyer, E.L. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Woolard, C.D. [Department of Chemistry, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2007-01-23

    The degradation of a thin-film hydrogenated single-junction amorphous silicon (a-Si:H) photovoltaic (PV) module has been studied. We investigated the different modes of electrical and physical degradation of a-Si:H PV modules by employing a degradation and failure assessment procedure used in conjunction with analytical techniques, including, scanning electron microscopy (SEM) and thermogravimetry. This paper reveals that due to their thickness, thin films are very sensitive to the type of degradation observed. Moreover, this paper deals with the problems associated with the module encapsulant, poly(ethylene-co-vinylacetate) (EVA). The main objective of this study was to establish the influence of outdoor environmental conditions on the performance of a thin-film PV module comprising a-Si:H single-junction cells. (author)

  8. Direct measurement of free-energy barrier to nucleation of crystallites in amorphous silicon thin films

    Science.gov (United States)

    Shi, Frank G.

    1994-01-01

    A method is introduced to measure the free-energy barrier W(sup *), the activation energy, and activation entropy to nucleation of crystallites in amorphous solids, independent of the energy barrier to growth. The method allows one to determine the temperature dependence of W(sup *), and the effect of the preparation conditions of the initial amorphous phase, the dopants, and the crystallization methds on W(sup *). The method is applied to determine the free-energy barrier to nucleation of crystallites in amorphous silicon (a-Si) thin films. For thermally induced nucleation in a-Si thin films with annealing temperatures in the range of from 824 to 983 K, the free-energy barrier W(sup *) to nucleation of silicon crystals is about 2.0 - 2.1 eV regardless of the preparation conditions of the films. The observation supports the idea that a-Si transforms into an intermediate amorphous state through the structural relaxation prior to the onset of nucleation of crystallites in a-Si. The observation also indicates that the activation entropy may be an insignificant part of the free-energy barrier for the nucleation of crystallites in a-Si. Compared with the free-energy barrier to nucleation of crystallites in undoped a-Si films, a significant reduction is observed in the free-energy barrier to nucleation in Cu-doped a-Si films. For a-Si under irradiation of Xe(2+) at 10(exp 5) eV, the free-energy barrier to ion-induced nucleation of crystallites is shown to be about half of the value associated with thermal-induced nucleation of crystallites in a-Si under the otherwise same conditions, which is much more significant than previously expected. The present method has a general kinetic basis; it thus should be equally applicable to nucleation of crystallites in any amorphous elemental semiconductors and semiconductor alloys, metallic and polymeric glasses, and to nucleation of crystallites in melts and solutions.

  9. Nuclear reaction analysis of hydrogen in amorphous silicon and silicon carbide films

    International Nuclear Information System (INIS)

    Guivarc'h, A.; Le Contellec, M.; Richard, J.; Ligeon, E.; Fontenille, J.; Danielou, R.

    1980-01-01

    The 1 H( 11 B, α)αα nuclear reaction is used to determine the H content and the density of amorphous semiconductor Si 1 -sub(x)Csub(x)H 2 and SiHsub(z) thin films. Rutherford backscattering is used to determine the x values and infrared transmission to study the hydrogen bonds. We have observed a transfer or/and a release of hydrogen under bombardment by various ions and we show that this last effect must be taken into account for a correct determination of the hydrogen content. An attempt is made to correlate the hydrogen release with electronic and nuclear energy losses. (orig.)

  10. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    International Nuclear Information System (INIS)

    Mouro, J.; Gualdino, A.; Chu, V.; Conde, J. P.

    2013-01-01

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n + -type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force

  11. Simultaneous depth profiling of constituents and impurities by elastic proton scattering in amorphous hydrogenated silicon films

    Science.gov (United States)

    Schwarz, R.; Kolodzey, J. S.; Wagner, S.; Kouzes, R. T.

    1987-01-01

    Depth profiles of various constituents and impurities of thin films were obtained simultaneously by a nuclear coincidence method. The energy spectrum of elastically scattered 12 MeV protons, measured by a high-resolution magnetic spectrometer, was used for constituent identification and total content determination. Constituents of interest were selected by software pulse height discrimination and their depth profiles were obtained from the recoil energy spectrum, measured by a surface barrier detector telescope. Thin films of Teflon, of carbon, and of amorphous hydrogenated silicon were measured. The best possible depth resolution is about 20 nm for carbon and is limited by the beam energy spread and the energy resolution of the solid state detectors.

  12. Hydrogenated amorphous silicon photonics

    Science.gov (United States)

    Narayanan, Karthik

    2011-12-01

    Silicon Photonics is quickly proving to be a suitable interconnect technology for meeting the future goals of on-chip bandwidth and low power requirements. However, it is not clear how silicon photonics will be integrated into CMOS chips, particularly microprocessors. The issue of integrating photonic circuits into electronic IC fabrication processes to achieve maximum flexibility and minimum complexity and cost is an important one. In order to minimize usage of chip real estate, it will be advantageous to integrate in three-dimensions. Hydrogenated amorphous silicon (a-Si:H) is emerging as a promising material for the 3-D integration of silicon photonics for on-chip optical interconnects. In addition, a-Si:H film can be deposited using CMOS compatible low temperature plasma-enhanced chemical vapor deposition (PECVD) process at any point in the fabrication process allowing maximum flexibility and minimal complexity. In this thesis, we demonstrate a-Si:H as a high performance alternate platform to crystalline silicon, enabling backend integration of optical interconnects in a hybrid photonic-electronic network-on-chip architecture. High quality passive devices are fabricated on a low-loss a-Si:H platform enabling wavelength division multiplexing schemes. We demonstrate a broadband all-optical modulation scheme based on free-carrier absorption effect, which can enable compact electro-optic modulators in a-Si:H. Furthermore, we comprehensively characterize the optical nonlinearities in a-Si:H and observe that a-Si:H exhibits enhanced nonlinearities as compared to crystalline silicon. Based on the enhanced nonlinearities, we demonstrate low-power four-wave mixing in a-Si:H waveguides enabling high speed all-optical devices in an a-Si:H platform. Finally, we demonstrate a novel data encoding scheme using thermal and all-optical tuning of silicon waveguides, increasing the spectral efficiency in an interconnect link.

  13. Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films

    Science.gov (United States)

    Alcinkaya, Burak; Sel, Kivanc

    2018-01-01

    The properties of phosphorus doped hydrogenated amorphous silicon carbide (a-SiCx:H) thin films, that were deposited by plasma enhanced chemical vapor deposition technique with four different carbon contents (x), were analyzed and compared with those of the intrinsic a-SiCx:H thin films. The carbon contents of the films were determined by X-ray photoelectron spectroscopy. The thickness and optical energies, such as Tauc, E04 and Urbach energies, of the thin films were determined by UV-Visible transmittance spectroscopy. The electrical properties of the films, such as conductivities and activation energies were analyzed by temperature dependent current-voltage measurements. Finally, the conduction mechanisms of the films were investigated by numerical analysis, in which the standard transport mechanism in the extended states and the nearest neighbor hopping mechanism in the band tail states were taken into consideration. It was determined that, by the effect of phosphorus doping the dominant conduction mechanism was the standard transport mechanism for all carbon contents.

  14. Adjustable optical response of amorphous silicon nanowires integrated with thin films.

    Science.gov (United States)

    Dhindsa, Navneet; Walia, Jaspreet; Pathirane, Minoli; Khodadad, Iman; Wong, William S; Saini, Simarjeet Singh

    2016-04-08

    We experimentally demonstrate a new optical platform by integrating hydrogenated amorphous silicon nanowire arrays with thin films deposited on transparent substrates like glass. A 535 nm thick thin film is anisotropically etched to fabricate vertical nanowire arrays of 100 nm diameter arranged in a square lattice. Adjusting the nanowire length, and consequently the thin film thickness permits the optical properties of this configuration to be tuned for either transmission filter response or enhanced broadband absorption. Vivid structural colors are also achieved in reflection and transmission. The optical properties of the platform are investigated for three different etch depths. Transmission filter response is achieved for a configuration with nanowires on glass without any thin film. Alternatively, integrating thin film with nanowires increases the absorption efficiency by ∼97% compared to the thin film starting layer and by ∼78% over nanowires on glass. The ability to tune the optical response of this material in this fashion makes it a promising platform for high performance photovoltaics, photodetectors and sensors.

  15. Biocompatibility of Hydrogen-Diluted Amorphous Silicon Carbide Thin Films for Artificial Heart Valve Coating

    Science.gov (United States)

    Rizal, Umesh; Swain, Bhabani S.; Rameshbabu, N.; Swain, Bibhu P.

    2018-01-01

    Amorphous silicon carbide (a-SiC:H) thin films were synthesized using trichloromethylsilane by a hot wire chemical vapor deposition process. The deposited films were characterized by Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, x-ray diffraction and x-ray photoelectron spectroscopy to confirm its chemical bonding, structural network and composition of the a-SiC:H films. The optical microscopy images reveal that hydrogen dilution increased the surface roughness and pore density of a-SiC:H thin film. The Raman spectroscopy and FTIR spectra reveal chemical network consisting of Si-Si, C-C and Si-C bonds, respectively. The XRD spectroscopy and Raman spectroscopy indicate a-SiC:H still has short-range order. In addition, in vitro cytotoxicity test ensures the behavior of cell-semiconductor hybrid to monitor the proper coordination. The live-dead assays and MTT assay reveal an increase in green nucleus cell, and cell viability is greater than 88%, respectively, showing non-toxic nature of prepared a-SiC:H film. Moreover, the result indicated by direct contact assay, and cell prefers to adhere and proliferate on a-SiC:H thin films having a positive effect as artificial heart valve coating material.

  16. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  17. On the structural and optical properties of sputtered hydrogenated amorphous silicon thin films

    International Nuclear Information System (INIS)

    Barhdadi, A.; Chafik El ldrissi, M.

    2002-08-01

    The present work is essentially focused on the study of optical and structural properties of hydrogenated amorphous silicon thin films (a-Si:H) prepared by radio-frequency cathodic sputtering. We examine separately the influence of hydrogen partial pressure during film deposition, and the effect of post-deposition thermal annealings on the main optical characteristics of the layers such as refraction index, optical gap and Urbach energy. Using the grazing X-rays reflectometry technique, thin film structural properties are examined immediately after films deposition as well as after surface oxidation or annealing. We show that low hydrogen pressures allow a saturation of dangling bonds in the layers, while high doses lead to the creation of new defects. We show also that thermal annealing under moderate temperatures improves the structural quality of the deposited layers. For the films examined just after deposition, the role of hydrogen appears in the increase of their density. For those analysed after a short stay in the ambient, hydrogen plays a protective role against the oxidation of their surfaces. This role disappears for a long time stay in the ambient. (author)

  18. Acoustically induced optical second harmonic generation in hydrogenated amorphous silicon films

    CERN Document Server

    Ebothe, J; Cabarrocas, P R I; Godet, C; Equer, B

    2003-01-01

    Acoustically induced second harmonic generation (AISHG) in hydrogenated amorphous silicon (a-Si : H) films of different morphology has been observed. We have found that with increasing acoustical power, the optical SHG of Gd : YAB laser light (lambda = 2.03 mu m) increases and reaches its maximum value at an acoustical power density of about 2.10 W cm sup - sup 2. With decreasing temperature, the AISHG signal strongly increases below 48 K and correlates well with the temperature behaviour of differential scanning calorimetry indicating near-surface temperature phase transition. The AISHG maxima were observed at acoustical frequencies of 10-11, 14-16, 20-22 and 23-26 kHz. The independently performed measurements of the acoustically induced IR spectra have shown that the origin of the observed phenomenon is the acoustically induced electron-phonon anharmonicity in samples of different morphology.

  19. Towards upconversion for amorphous silicon solar cells

    NARCIS (Netherlands)

    de Wild, J.; Meijerink, A.; Rath, J.K.; van Sark, W.G.J.H.M.; Schropp, R.E.I.

    2010-01-01

    Upconversion of subbandgap light of thin film single junction amorphous silicon solar cells may enhance their performance in the near infrared (NIR). In this paper we report on the application of the NIR–vis upconverter β-NaYF4:Yb3+(18%) Er3+(2%) at the back of an amorphous silicon solar cell in

  20. Performance and stability of low temperature hydrogenated amorphous silicon thin film transistors fabricated on stainless steel substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sung Hwan; Kim, Sung Ki; Lee, Jong-Kwon; Lee, Seok-Woo; Lee, Hong Koo; Peak, Seung Han; Park, Yong-In; Kim, Chang-Dong; Hwang, Yong Kee; Chung, In-Jae [LG Display R and D Center, Paju, Gyongki-do, 413-811 (Korea)

    2010-04-15

    The key development issues in the flexible displays are TFT backplane technology, which requires competitive device performance and low temperature process compatible with flexible substrate. Here, we have fabricated low temperature hydrogenated amorphous silicon thin film transistor on a stainless steel substrate coated with organic barrier layer. Then, we have studied initial device performance by varying plasma gas and pressure conditions at a low power and a low temperature during amorphous silicon and silicon nitride deposition steps. Also, we discuss the stability characteristics of this low temperature processed thin film transistor, which reveals enough possibility for use in flexible display applications. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Photoelectron yield spectroscopy and inverse photoemission spectroscopy evaluations of p-type amorphous silicon carbide films prepared using liquid materials

    Energy Technology Data Exchange (ETDEWEB)

    Murakami, Tatsuya, E-mail: mtatsuya@jaist.ac.jp, E-mail: mtakashi@jaist.ac.jp [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Masuda, Takashi, E-mail: mtatsuya@jaist.ac.jp, E-mail: mtakashi@jaist.ac.jp; Inoue, Satoshi; Shimoda, Tatsuya [Green Device Research Center, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1211 (Japan); Yano, Hiroshi; Iwamuro, Noriyuki [Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennoudai, Tsukuba, Ibaraki 305-8573 (Japan)

    2016-05-15

    Phosphorus-doped amorphous silicon carbide films were prepared using a polymeric precursor solution. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross-linkage, providing semiconducting properties in the films. The valence and conduction states of resultant films were determined directly through the combination of inverse photoemission spectroscopy and photoelectron yield spectroscopy. The incorporated carbon widened energy gap and optical gap comparably in the films with lower carbon concentrations. In contrast, a large deviation between the energy gap and the optical gap was observed at higher carbon contents because of exponential widening of the band tail.

  2. Effect of back reflectors on photon absorption in thin-film amorphous silicon solar cells

    Science.gov (United States)

    Hossain, Mohammad I.; Qarony, Wayesh; Hossain, M. Khalid; Debnath, M. K.; Uddin, M. Jalal; Tsang, Yuen Hong

    2017-10-01

    In thin-film solar cells, the photocurrent conversion productivity can be distinctly boosted-up utilizing a proper back reflector. Herein, the impact of different smooth and textured back reflectors was explored and effectuated to study the optical phenomena with interface engineering strategies and characteristics of transparent contacts. A unique type of wet-chemically textured glass-substrate 3D etching mask used in superstrate (p-i-n) amorphous silicon-based solar cell along with legitimated back reflector permits joining the standard light-trapping methodologies, which are utilized to upgrade the energy conversion efficiency (ECE). To investigate the optical and electrical properties of solar cell structure, the optical simulations in three-dimensional measurements (3D) were performed utilizing finite-difference time-domain (FDTD) technique. This design methodology allows to determine the power losses, quantum efficiencies, and short-circuit current densities of various layers in such solar cell. The short-circuit current densities for different reflectors were varied from 11.50 to 13.27 and 13.81 to 16.36 mA/cm2 for the smooth and pyramidal textured solar cells, individually. Contrasted with the comparable flat reference cell, the short-circuit current density of textured solar cell was increased by around 24%, and most extreme outer quantum efficiencies rose from 79 to 86.5%. The photon absorption was fundamentally improved in the spectral region from 600 to 800 nm with no decrease of photocurrent shorter than 600-nm wavelength. Therefore, these optimized designs will help to build the effective plans next-generation amorphous silicon-based solar cells.

  3. Studies of hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Bishop, S G; Carlos, W E

    1984-07-01

    This report discusses the results of probing the defect structure and bonding of hydrogenated amorphous silicon films using both nuclear magnetic resonance (NMR) and electron spin resonance (ESR). The doping efficiency of boron in a-Si:H was found to be less than 1%, with 90% of the boron in a threefold coordinated state. On the other hand, phosphorus NMR chemical shift measurements yielded a ration of threefold to fourfold P sites of roughly 4 to 1. Various resonance lines were observed in heavily boron- and phosphorus-doped films and a-SiC:H alloys. These lines were attributed to band tail states on twofold coordinated silicon. In a-SiC:H films, a strong resonance was attributed to dangling bonds on carbon atoms. ESR measurements on low-pressure chemical-vapor-deposited (LPCVD) a-Si:H were performed on samples. The defect density in the bulk of the films was 10/sup 17//cc with a factor of 3 increase at the surface of the sample. The ESR spectrum of LPCVD-prepared films was not affected by prolonged exposure to strong light. Microcrystalline silicon samples were also examined. The phosphorus-doped films showed a strong signal from the crystalline material and no resonance from the amorphous matrix. This shows that phosphorus is incorporated in the crystals and is active as a dopant. No signal was recorded from the boron-doped films.

  4. Hydrogen in hydrogenated amorphous silicon thick film and its relation to the photoresponse of the film in contact with molybdenum

    International Nuclear Information System (INIS)

    Sridhar, N.; Chung, D.D.L.

    1992-01-01

    This paper reports that hydrogenated amorphous silicon films of thickness 0.5-7 μm on molybdenum substrates were deposited from silane by dc glow discharge and studied by mass spectrometric observation of the evolution of hydrogen upon heating and correlating this information with the photoresponse. The films were found to contain two types of hydrogen, namely weak bonded hydrogen, which evolved at 365 degrees C and was the minority, and strongly bonded hydrogen, which evolved at 460-670 degrees C and was the majority. The proportion of strongly bonded hydrogen increased with increasing film thickness and with increasing substrate temperature during deposition. The total amount of hydrogen increased when the substrate temperature was decreased from 350 to 275 degrees C. The strongly bonded hydrogen resided throughout the thickness of the film, whereas the weakly bonded hydrogen resided near the film surface. The evolution of the strongly bonded hydrogen was diffusion controlled, with an activation energy of 1.6 eV. The strongly bonded hydrogen enhanced the photoresponse, whereas the weakly bonded hydrogen degraded the photoresponse

  5. Device and material characterization and analytic modeling of amorphous silicon thin film transistors

    Science.gov (United States)

    Slade, Holly Claudia

    Hydrogenated amorphous silicon thin film transistors (TFTs) are now well-established as switching elements for a variety of applications in the lucrative electronics market, such as active matrix liquid crystal displays, two-dimensional imagers, and position-sensitive radiation detectors. These applications necessitate the development of accurate characterization and simulation tools. The main goal of this work is the development of a semi- empirical, analytical model for the DC and AC operation of an amorphous silicon TFT for use in a manufacturing facility to improve yield and maintain process control. The model is physically-based, in order that the parameters scale with gate length and can be easily related back to the material and device properties. To accomplish this, extensive experimental data and 2D simulations are used to observe and quantify non- crystalline effects in the TFTs. In particular, due to the disorder in the amorphous network, localized energy states exist throughout the band gap and affect all regimes of TFT operation. These localized states trap most of the free charge, causing a gate-bias-dependent field effect mobility above threshold, a power-law dependence of the current on gate bias below threshold, very low leakage currents, and severe frequency dispersion of the TFT gate capacitance. Additional investigations of TFT instabilities reveal the importance of changes in the density of states and/or back channel conduction due to bias and thermal stress. In the above threshold regime, the model is similar to the crystalline MOSFET model, considering the drift component of free charge. This approach uses the field effect mobility to take into account the trap states and must utilize the correct definition of threshold voltage. In the below threshold regime, the density of deep states is taken into account. The leakage current is modeled empirically, and the parameters are temperature dependent to 150oC. The capacitance of the TFT can be

  6. A COMPARISON OF THE ENVIRONMENTAL IMPACT OF SOLAR POWER GENERATION USING MULTICRYSTALLINE SILICON AND THIN FILM OF AMORPHOUS SILICON SOLAR CELLS: CASE STUDY IN THAILAND

    Directory of Open Access Journals (Sweden)

    Wasin Khaenson

    2017-07-01

    Full Text Available This paper studies the environmental impact of two different forms of solar power generation in Thailand - that of multicrystalline silicon solar cells, and that of thin film amorphous silicon solar cells. It takes as its study two of the largest solar cell power plants of their kind in Thailand; a multicrystalline silicon plant in the north (generating 90 MW and a thin film amorphous silicon plant in the centre (generating 55 MW. The Life Cycle Assessment tool (LCA was used to assess the environmental impact of each stage of the process, from the manufacture of the cells, through to their transportation, installation and eventual recycling. The functional unit of the study was the generation of 1 kWh of power transmitted and distributed by the Electricity Generating Authority of Thailand (EGAT and Provincial Electricity Authority (PEA. The environmental impact results were calculated in terms of eco-points (Pt per functional unit of 1 kWh. The characterised data for 1 kWh of solar power generation was then compared with data for 1 kWh of combined cycle and thermal power generation (both in Thailand, using the same set of characterisation factors. After analyzing the results, both forms of solar power energy generation were found to impact upon the studied categories of Human Health, Ecosystem Quality and Resource Depletion, whilst also highlighting the importance of the solar cell module recycling process in decreasing the overall environmental impact. When the two solar cell technologies were compared, the overall impact of the multicrystalline silicon solar cell was found to be higher than that of the thin film amorphous silicon solar cell. Furthermore, when assessing the overall impact against non-renewable power generating technologies such as combined cycle and thermal power generation, the thin film amorphous silicon solar cells were found to have the lowest environmental impact of all technologies studied.

  7. Irreversible lithium storage during lithiation of amorphous silicon thin film electrodes studied by in-situ neutron reflectometry

    Science.gov (United States)

    Jerliu, Bujar; Hüger, Erwin; Horisberger, Michael; Stahn, Jochen; Schmidt, Harald

    2017-08-01

    Amorphous silicon is a promising high-capacity anode material for application in lithium-ion batteries. However, a huge drawback of the material is that the large capacity losses taking place during cycling lead to an unstable performance. In this study we investigate the capacity losses occurring during galvanostatic lithiation of amorphous silicon thin film electrodes by in-situ neutron reflectometry experiments for the first ten cycles. As determined from the analysis of the neutron scattering length density and of the film thickness, the capacity losses are due to irreversible storage of lithium in the electrode. The amount of stored lithium increases during cycling to 20% of the maximum theoretical capacity after the 10th cycle. Possible explanations are discussed.

  8. Phosphorus-doped Amorphous Silicon Nitride Films Applied to Crystalline Silicon Solar Cells

    NARCIS (Netherlands)

    Feinäugle, Matthias

    2008-01-01

    The Photovoltaics Group at the Universitat Politècnica de Catalunya is investigating silicon carbide (SiC) for the electronic passivation of the surface of crystalline silicon solar cells. The doping of SiC passivation layers with phosphorus resulted in a clear improvement of the minority carrier

  9. Structural characterization of the interface structure of amorphous silicon thin films after post-deposition argon or hydrogen plasma treatment

    Science.gov (United States)

    Neumüller, Alex; Sergeev, Oleg; Vehse, Martin; Agert, Carsten

    2017-05-01

    The interfaces in silicon thin film solar cells and silicon heterojunction solar cells are considered to be very important for the solar cell conversion efficiency. This work studies the interface properties of hydrogenated amorphous silicon thin films deposited on crystalline silicon wafers after post-deposition hydrogen plasma treatment (HPT) or argon plasma treatment (APT). The investigation extends our previous study by examining the structural changes resulting from the post-deposition plasma treatment on silicon thin film solar cells. We analyzed the ellipsometry and infrared spectra of our samples to gain a deeper understanding of the fundamental plasma treatment effects. By using post-deposition APT and HPT, we were able to reduce the material stress and improve the structure of these layers. Our results show that APT yields a more compact material with fewer voids and less distinct localized tail states. We discuss the effect of APT and HPT on the most crucial interface in silicon heterojunction solar cells, the i-a-Si:H/c-Si interface. We propose to introduce APT as a post-deposition process step in the fabrication of silicon heterojunction solar cells.

  10. Laser Direct Patterning of Organic Dielectric Passivation Layer for Fabricating Amorphous Silicon Thin-Film Transistors

    Science.gov (United States)

    Chen, Chao-Nan; Su, Kuo-Hui; Chen, Yeong-Chin

    2011-06-01

    In this study, a laser direct patterning process application in benzocyclobutene (BCB) organic dielectric passivation-based amorphous silicon (a-Si) thin film transistor (TFT) device fabrication has been carried out using a KrF excimer laser. A BCB organic photoresist material of 2000 nm with a dielectric constant = 2.7 served as the dielectric passivation layer in our device. Compared with conventional processes, laser direct patterning combining BCB organic photoresist dielectric passivation could eliminate at least four process steps. The etching depth of the BCB organic material passivation layer depends on the laser energy density and number of irradiation shots. The hydrogenated a-Si TFT devices are fabricated by replacing the passivation layer and contact hole patterning process. The mobility and threshold voltage reached 0.16 cm2 V-1 s-1 and -3.5 V, respectively. For TFT device performance, laser direct patterning technology is a potential method of replacing photolithography technology in the application of BCB organic dielectric passivation-based TFT manufacture.

  11. Hydrogen related crystallization in intrinsic hydrogenated amorphous silicon films prepared by reactive radiofrequency magnetron sputtering at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Senouci, D. [Laboratoire de Genie Physique, Universite Ibn-Khaldoun, 14000 Tiaret (Algeria); LPCMME, Departement de Physique, Universite d' Oran Es-senia, 3100, Oran (Algeria); Baghdad, R., E-mail: r_baghdad@mail.univ-tiaret.dz [Laboratoire de Genie Physique, Universite Ibn-Khaldoun, 14000 Tiaret (Algeria); Belfedal, A.; Chahed, L. [LPCMME, Departement de Physique, Universite d' Oran Es-senia, 3100, Oran (Algeria); Portier, X. [CIMAP, CEA, CNRS UMR 6252-ENSICAEN, UCBN, 6 Bvd Marechal Juin, 14050 Caen Cedex (France); Charvet, S. [LPMC, UFR des Sciences, Universite de Picardie Jules Verne, 33 rue Saint-Leu, 80039 Amiens (France); Kim, K.H. [LPICM, Laboratoire de Physique des Interfaces et Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France); TOTAL S.A., Gas and Power, R and D Division, Courbevoie (France); Roca i Cabarrocas, P. [LPICM, Laboratoire de Physique des Interfaces et Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France); Zellama, K. [LPMC, UFR des Sciences, Universite de Picardie Jules Verne, 33 rue Saint-Leu, 80039 Amiens (France)

    2012-11-01

    We present an investigation on the transition from amorphous to nanocrystalline silicon and associated hydrogen changes during the first steps of hydrogenated nanocrystalline silicon growth for films elaborated by reactive radiofrequency magnetron sputtering at a substrate temperature as low as room temperature and for deposition times varying from 3 to 60 min. Complementary experimental techniques have been used to characterize the films in their as-deposited state. They are completed by thermal hydrogen effusion experiments conducted in the temperature range, from room temperature to 800 Degree-Sign C. The results show that, during the initial stages of growth, the presence of a hydrogen-rich layer is necessary to initiate the crystallization process. - Highlights: Black-Right-Pointing-Pointer Nanocrystalline silicon growth at room temperature. Black-Right-Pointing-Pointer Transition from amorphous to nanocrystalline silicon. Black-Right-Pointing-Pointer Chemical reactions of H atoms with strained Si-Si bonds. Black-Right-Pointing-Pointer H selective etching and chemical transport caused the silicon nucleation.

  12. Piezoresistive pressure sensor using low-temperature aluminium induced crystallization of sputter-deposited amorphous silicon film

    Science.gov (United States)

    Tiwari, Ruchi; Chandra, Sudhir

    2013-09-01

    In the present work, we have investigated the piezoresistive properties of silicon films prepared by the radio frequency magnetron sputtering technique, followed by the aluminium induced crystallization (AIC) process. Orientation and grain size of the polysilicon films were studied by x-ray diffraction analysis and found to be in the range 30-50 nm. Annealing of the Al-Si stack on an oxidized silicon substrate was performed in air ambient at 300-550 °C, resulting in layer exchange and transformation from amorphous to polysilicon phase. Van der Pauw and Hall measurement techniques were used to investigate the sheet resistance and carrier mobility of the resulting polycrystalline silicon film. The effect of Al thickness on the sheet resistance and mobility was also studied in the present work. A piezoresistive pressure sensor was fabricated on an oxidized silicon substrate in a Wheatstone bridge configuration, comprising of four piezoresistors made of polysilicon film obtained by the AIC process. The diaphragm was formed by the bulk-micromachining of silicon substrate. The response of the pressure sensor with applied negative pressure in 10-95 kPa range was studied. The gauge factor was estimated to be 5 and 18 for differently located piezoresistors on the diaphragm. The sensitivity of the pressure sensor was measured to be ˜ 30 mV MPa-1, when the Wheatstone bridge was biased at 1 V input voltage.

  13. Optical properties of amorphous hydrogenated and microcrystalline silicon films prepared by plasma enhanced chemical vapor deposition and re-crystallized at moderate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Netrvalova, Marie; Prusakova, Lucie; Sutta, Pavol [New Technologies - Research Centre, University of West Bohemia, Univerzitni 8, 30614 Plzen (Czech Republic); Mullerova, Jarmila [Faculty of Electrical Engineering, University of Zilina, ul. kpt. J. Nalepku 1390, 03101 Liptovsky Mikulas (Slovakia)

    2011-09-15

    Amorphous hydrogenated silicon films different in thickness (600 - 2400 nm) were deposited by plasma enhanced chemical vapour deposition on Corning glass substrates at 250 C using silan 10% / argon 90% gas mixture. The samples were consequently isothermally heated in a high temperature vacuum chamber at 0.1 Pa and at temperatures from 580 to 620 C. In order to evaluate structural and optical properties of the films X-ray diffraction analysis, Raman spectrometry and optical spectrophotometry were used. Crystalline state (amorphous or microcrystalline), optical band gaps, refractive indices, extinction coefficients, absorption coefficients were determined. X-ray diffraction analysis indicated that originally deposited films were amorphous with different degree of homogeneity depending on the film thickness. After the heat treatment the films became polycrystalline with crystallite sizes 40-50 nm without particular dependence on the recrystallization process used. Raman spectrometry confirmed the results obtained from X-ray diffraction and furthermore revealed the residual amorphous phase 20-25% in volume. Optical spectrophotometry has shown that the values of refractive indices of thermally treated films approach the mono-crystalline silicon refractive index. Extinction coefficients of the thermally treated films are slightly higher than those for monocrystalline silicon. Absorption coefficients for thermally treated films reached quite high values near the absorption edge of the original amorphous material, which can be advantageous for tandem solar cell technologies. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Enhanced efficiency of hybrid amorphous silicon solar cells based on single-walled carbon nanotubes and polymer composite thin film

    Science.gov (United States)

    Rajanna, Pramod M.; Gilshteyn, Evgenia P.; Yagafarov, Timur; Aleekseeva, Alena K.; Anisimov, Anton S.; Neumüller, Alex; Sergeev, Oleg; Bereznev, Sergei; Maricheva, Jelena; Nasibulin, Albert G.

    2018-03-01

    We report a simple approach to fabricate hybrid solar cells (HSCs) based on a single-walled carbon nanotube (SWCNT) film and thin film hydrogenated amorphous silicon (a-Si:H). Randomly oriented high-quality SWCNTs with conductivity enhanced by means of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate are used as a window layer and a front electrode. A series of HSCs are fabricated in ambient conditions with varying SWCNT film thicknesses. The polymethylmethacrylate layer drop-casted on fabricated HSCs reduces the reflection fourfold and enhances the short-circuit J sc , open-circuit V oc , and efficiency by nearly 10%. A state-of-the-art J-V performance is shown for SWCNT/a-Si HSC with an open-circuit voltage of 900 mV and an efficiency of 3.4% under simulated one-sun AM 1.5 G direct illumination.

  15. Impact of contamination on hydrogenated amorphous silicon thin films and solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Woerdenweber, Jan

    2011-09-26

    This thesis deals with atmospheric contamination and cross-contamination of boron (single-chamber process) of the intrinsic absorber layer (i-layer) of p-i-n thin film solar cells based on hydrogenated amorphous silicon. The atmospheric contaminations were introduced by means of intentional leaks. Hereby, the focus is on the influence of contamination species (oxygen and nitrogen), quantity of contamination (leak flow), source of contamination (leaks at chamber wall or in the process gas pipe), and plasma power on the properties of solar cells. Thereby, the minimum requirements for the purity of vacuum and process gas as well as leak conditions of the recipient and gas pipe system have been determined. Additionally, deposition regimes were developed, where the incorporation of impurities is significantly suppressed. For standard processes critical levels of nitrogen and oxygen contamination are determined to be {proportional_to} 4 x 10{sup 18} cm{sup -3} and {proportional_to} 2 x 10{sup 19} cm{sup -3}, respectively, for a leak situated at the chamber wall. Above these concentrations the solar cell efficiency deteriorates. In literature, incorporation of oxygen and nitrogen in doping configuration is assumed to be the reason for the cell deterioration. This assumption is supported by additional material studies of contaminated absorber layers done in this work. The difference in critical concentration is due to the higher doping efficiency of nitrogen compared to that for oxygen. Nevertheless, applying an air leak the critical concentrations of O and N are reached almost simultaneously since the incorporation probability of oxygen is about one order of magnitude higher compared to that for nitrogen. Applying a leak in the process gas pipe the critical oxygen contamination level increases to {proportional_to} 2 x 10{sup 20} cm{sup -3} whereas the critical nitrogen level remains unchanged compared to a chamber wall leak. Applying a deposition regime with a very high

  16. Amorphization and recrystallization processes in monocrystalline beta silicon carbide thin films

    International Nuclear Information System (INIS)

    Edmond, J.A.; Withrow, S.P.; Kong, H.S.; Davis, R.F.

    1985-01-01

    Individual, as well as multiple doses of 27 Al + , 31 P + , 28 Si + , and 28 Si + and 12 C + , were implanted into (100) oriented monocrystalline β-SiC films. The critical energy of approx. =16 eV/atom required for the amorphization of β-SiC via implantation of 27 Al + and 31 P + was determined using the TRIM84 computer program for calculation of the damage-energy profiles coupled with the results of RBS/ion channeling analyses. In order to recrystallize amorphized layers created by the individual implantation of all four ion species, thermal annealing at 1600, 1700, or 1800 0 C was employed. Characterization of the recrystallized layers was performed using XTEM. Examples of SPE regrown layers containing precipitates and dislocation loops, highly faulted-microtwinned regions, and random crystallites were observed

  17. Near infrared photoluminescence of the hydrogenated amorphous silicon thin films with in-situ embedded silicon nanoparticles

    Czech Academy of Sciences Publication Activity Database

    Remeš, Zdeněk; Stuchlík, Jiří; Purkrt, Adam; Ledinský, Martin; Kupčík, Jaroslav

    2017-01-01

    Roč. 61, č. 2 (2017), s. 136-140 ISSN 0862-5468 R&D Projects: GA ČR GC16-10429J Grant - others:AV ČR(CZ) KONNECT-007 Program:Bilaterální spolupráce Institutional support: RVO:68378271 ; RVO:61388980 Keywords : amorphous silicon * chemical vapor deposition * photothermal deflection spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism; CA - Inorganic Chemistry (UACH-T) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Inorganic and nuclear chemistry (UACH-T) Impact factor: 0.439, year: 2016

  18. Determination of density of band-gap states of hydrogenated amorphous silicon suboxide thin films

    International Nuclear Information System (INIS)

    Bacioglu, A.

    2005-01-01

    Variation of density of gap states of PECVD silicon suboxide films with different oxygen concentrations was evaluated through electrical and optical measurements. Optical transmission and constant photocurrent method (CPM) were used to determine absorption coefficient as a function of photon energy. From these measurements the localized density of states between the valance band mobility edge and Fermi level has been determined. To determine the variation of conduction band edge, steady state photoconductivity (SSPC), photoconductivity response time (PCRT) and transient photoconductivity (TPC) measurements were utilized. Results indicate that the conduction and valance band edges, both, widen monotonically with oxygen content

  19. Characterization and simulation on antireflective coating of amorphous silicon oxide thin films with gradient refractive index

    Science.gov (United States)

    Huang, Lu; Jin, Qi; Qu, Xingling; Jin, Jing; Jiang, Chaochao; Yang, Weiguang; Wang, Linjun; Shi, Weimin

    2016-08-01

    The optical reflective properties of silicon oxide (SixOy) thin films with gradient refractive index are studied both theoretically and experimentally. The thin films are widely used in photovoltaic as antireflective coatings (ARCs). An effective finite difference time domain (FDTD) model is built to find the optimized reflection spectra corresponding to structure of SixOy ARCs with gradient refractive index. Based on the simulation analysis, it shows the variation of reflection spectra with gradient refractive index distribution. The gradient refractive index of SixOy ARCs can be obtained in adjustment of SiH4 to N2O ratio by plasma-enhanced chemical vapor deposition (PECVD) system. The optimized reflection spectra measured by UV-visible spectroscopy confirms to agree well with that simulated by FDTD method.

  20. Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching

    International Nuclear Information System (INIS)

    Boukezzata, A.; Keffous, A.; Cheriet, A.; Belkacem, Y.; Gabouze, N.; Manseri, A.; Nezzal, G.; Kechouane, M.; Bright, A.; Guerbous, L.; Menari, H.

    2010-01-01

    In this work, we present the formation of porous layers on hydrogenated amorphous SiC (a-SiC: H) by Ag-assisted photochemical etching using HF/K 2 S 2 O 8 solution under UV illumination at 254 nm wavelength. The amorphous films a-SiC: H were elaborated by d.c. magnetron sputtering using a hot pressed polycrystalline 6H-SiC target. Because of the high resistivity of the SiC layer, around 1.6 MΩ cm and in order to facilitate the chemical etching, a thin metallic film of high purity silver (Ag) has been deposited under vacuum onto the thin a-SiC: H layer. The etched surface was characterized by scanning electron microscopy, secondary ion mass spectroscopy, infrared spectroscopy and photoluminescence. The results show that the morphology of etched a-SiC: H surface evolves with etching time. For an etching time of 20 min the surface presents a hemispherical crater, indicating that the porous SiC layer is perforated. Photoluminescence characterization of etched a-SiC: H samples for 20 min shows a high and an intense blue PL, whereas it has been shown that the PL decreases for higher etching time. Finally, a dissolution mechanism of the silicon carbide in 1HF/1K 2 S 2 O 8 solution has been proposed.

  1. Room temperature photoluminescence spectrum modeling of hydrogenated amorphous silicon carbide thin films by a joint density of tail states approach and its application to plasma deposited hydrogenated amorphous silicon carbide thin films

    International Nuclear Information System (INIS)

    Sel, Kıvanç; Güneş, İbrahim

    2012-01-01

    Room temperature photoluminescence (PL) spectrum of hydrogenated amorphous silicon carbide (a-SiC x :H) thin films was modeled by a joint density of tail states approach. In the frame of these analyses, the density of tail states was defined in terms of empirical Gaussian functions for conduction and valance bands. The PL spectrum was represented in terms of an integral of joint density of states functions and Fermi distribution function. The analyses were performed for various values of energy band gap, Fermi energy and disorder parameter, which is a parameter that represents the width of the energy band tails. Finally, the model was applied to the measured room temperature PL spectra of a-SiC x :H thin films deposited by plasma enhanced chemical vapor deposition system, with various carbon contents, which were determined by X-ray photoelectron spectroscopy measurements. The energy band gap and disorder parameters of the conduction and valance band tails were determined and compared with the optical energies and Urbach energies, obtained by UV–Visible transmittance measurements. As a result of the analyses, it was observed that the proposed model sufficiently represents the room temperature PL spectra of a-SiC x :H thin films. - Highlights: ► Photoluminescence spectra (PL) of the films were modeled. ► In the model, joint density of tail states and Fermi distribution function are used. ► Various values of energy band gap, Fermi energy and disorder parameter are applied. ► The model was applied to the measured PL of the films. ► The proposed model represented the room temperature PL spectrum of the films.

  2. Development of Thin Film Amorphous Silicon Tandem Junction Based Photocathodes Providing High Open-Circuit Voltages for Hydrogen Production

    Directory of Open Access Journals (Sweden)

    F. Urbain

    2014-01-01

    Full Text Available Hydrogenated amorphous silicon thin film tandem solar cells (a-Si:H/a-Si:H have been developed with focus on high open-circuit voltages for the direct application as photocathodes in photoelectrochemical water splitting devices. By temperature variation during deposition of the intrinsic a-Si:H absorber layers the band gap energy of a-Si:H absorber layers, correlating with the hydrogen content of the material, can be adjusted and combined in a way that a-Si:H/a-Si:H tandem solar cells provide open-circuit voltages up to 1.87 V. The applicability of the tandem solar cells as photocathodes was investigated in a photoelectrochemical cell (PEC measurement set-up. With platinum as a catalyst, the a-Si:H/a-Si:H based photocathodes exhibit a high photocurrent onset potential of 1.76 V versus the reversible hydrogen electrode (RHE and a photocurrent of 5.3 mA/cm2 at 0 V versus RHE (under halogen lamp illumination. Our results provide evidence that a direct application of thin film silicon based photocathodes fulfills the main thermodynamic requirements to generate hydrogen. Furthermore, the presented approach may provide an efficient and low-cost route to solar hydrogen production.

  3. Ion bombardment and disorder in amorphous silicon

    International Nuclear Information System (INIS)

    Sidhu, L.S.; Gaspari, F.; Zukotynski, S.

    1997-01-01

    The effect of ion bombardment during growth on the structural and optical properties of amorphous silicon are presented. Two series of films were deposited under electrically grounded and positively biased substrate conditions. The biased samples displayed lower growth rates and increased hydrogen content relative to grounded counterparts. The film structure was examined using Raman spectroscopy. The transverse optic like phonon band position was used as a parameter to characterize network order. Biased samples displayed an increased order of the amorphous network relative to grounded samples. Furthermore, biased samples exhibited a larger optical gap. These results are correlated and attributed to reduced ion bombardment effects

  4. The effects of plasma-assisted chemical vapor deposition process variables on the properties of amorphous silicon carbide films

    Science.gov (United States)

    Moskowitz, Illa Lorren

    Amorphous hydrogenated carbon films containing silicon are of considerable interest for a variety of applications including window layers for solar cells, anti-abrasion coatings, masks for x-ray photolithography and biomedical applications. Plasma-assisted chemical vapor deposition (PACVD) is one of the preferred techniques for depositing these films. a-Si:C:H films were deposited by PACVD using a plasma reactor with capacitively coupled parallel plate configuration operating at 13.56 MHz. The following film properties were studied: intrinsic stress (from the curvature of the substrates), micro-hardness (obtained from nanoindentation), surface roughness and morphology (studied using atomic force microscopy), surface energy (obtained from wetting angle measurements) and the optical constants of the films (as obtained from computer modeling of ellipsometric data). The composition of the films was established from Rutherford backscattering experiments and the hydrogen content was measured using nuclear reaction analysis. By investigating the process variables of the PACVD system using a 2-level factorial experimental design, a better understanding of this complex deposition process has been gained. From this study some of the relationships between the process variables of the PACVD system and physical characteristics of the deposited films such as surface roughness, film stress and optical properties have been established. For example, increasing the energy of bombarding ions produced an increase in the surface roughness under certain conditions, but produced a decrease in roughness under other conditions. In another case, changing the composition of the source gas produced a significant change in the refractive index of the films when the ion energy was high, but had little effect when the ion energy was low. Values obtained for the surface roughness of the films and the dispersion functions of n and k obtained from the ellipsometric modeling were in general

  5. Carrier collection losses in interface passivated amorphous silicon thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Neumüller, A., E-mail: alex.neumueller@next-energy.de; Sergeev, O.; Vehse, M.; Agert, C. [NEXT ENERGY EWE Research Centre for Energy Technology at the University of Oldenburg, Carl-von-Ossietzky-Straße 15, 26129 Oldenburg (Germany); Bereznev, S.; Volobujeva, O. [Department of Materials Science, Tallinn University of Technology, Ehitajate Tee 5, Tallinn 19086 (Estonia); Ewert, M.; Falta, J. [Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen (Germany); MAPEX Center for Materials and Processes, University of Bremen, 28359 Bremen (Germany)

    2016-07-25

    In silicon thin-film solar cells the interface between the i- and p-layer is the most critical. In the case of back diffusion of photogenerated minority carriers to the i/p-interface, recombination occurs mainly on the defect states at the interface. To suppress this effect and to reduce recombination losses, hydrogen plasma treatment (HPT) is usually applied. As an alternative to using state of the art HPT we apply an argon plasma treatment (APT) before the p-layer deposition in n-i-p solar cells. To study the effect of APT, several investigations were applied to compare the results with HPT and no plasma treatment at the interface. Carrier collection losses in resulting solar cells were examined with spectral response measurements with and without bias voltage. To investigate single layers, surface photovoltage and X-ray photoelectron spectroscopy (XPS) measurements were conducted. The results with APT at the i/p-interface show a beneficial contribution to the carrier collection compared with HPT and no plasma treatment. Therefore, it can be concluded that APT reduces the recombination centers at the interface. Further, we demonstrate that carrier collection losses of thin-film solar cells are significantly lower with APT.

  6. High Growth Rate Deposition of Hydrogenated Amorphous Silicon-Germanium Films and Devices Using ECR-PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yong [Iowa State Univ., Ames, IA (United States)

    2002-01-01

    Hydrogenated amorphous silicon germanium films (a-SiGe:H) and devices have been extensively studied because of the tunable band gap for matching the solar spectrum and mature the fabrication techniques. a-SiGe:H thin film solar cells have great potential for commercial manufacture because of very low cost and adaptability to large-scale manufacturing. Although it has been demonstrated that a-SiGe:H thin films and devices with good quality can be produced successfully, some issues regarding growth chemistry have remained yet unexplored, such as the hydrogen and inert-gas dilution, bombardment effect, and chemical annealing, to name a few. The alloying of the SiGe introduces above an order-of-magnitude higher defect density, which degrades the performance of the a-SiGe:H thin film solar cells. This degradation becomes worse when high growth-rate deposition is required. Preferential attachment of hydrogen to silicon, clustering of Ge and Si, and columnar structure and buried dihydride radicals make the film intolerably bad. The work presented here uses the Electron-Cyclotron-Resonance Plasma-Enhanced Chemical Vapor Deposition (ECR-PECVD) technique to fabricate a-SiGe:H films and devices with high growth rates. Helium gas, together with a small amount of H2, was used as the plasma species. Thickness, optical band gap, conductivity, Urbach energy, mobility-lifetime product, I-V curve, and quantum efficiency were characterized during the process of pursuing good materials. The microstructure of the a-(Si,Ge):H material was probed by Fourier-Transform Infrared spectroscopy. They found that the advantages of using helium as the main plasma species are: (1) high growth rate--the energetic helium ions break the reactive gas more efficiently than hydrogen ions; (2) homogeneous growth--heavy helium ions impinging on the surface promote the surface mobility of the reactive radicals, so that heteroepitaxy growth as clustering of Ge and Si, columnar structure are

  7. Scattering matrix analysis for evaluating the photocurrent in hydrogenated-amorphous-silicon-based thin film solar cells.

    Science.gov (United States)

    Shin, Myunghun; Lee, Seong Hyun; Lim, Jung Wook; Yun, Sun Jin

    2014-11-01

    A scattering matrix (S-matrix) analysis method was developed for evaluating hydrogenated amorphous silicon (a-Si:H)-based thin film solar cells. In this approach, light wave vectors A and B represent the incoming and outgoing behaviors of the incident solar light, respectively, in terms of coherent wave and incoherent intensity components. The S-matrix determines the relation between A and B according to optical effects such as reflection and transmission, as described by the Fresnel equations, scattering at the boundary surfaces, or scattering within the propagation medium, as described by the Beer-Lambert law and the change in the phase of the propagating light wave. This matrix can be used to evaluate the behavior of angle-incident coherent and incoherent light simultaneously, and takes into account not only the light scattering process at material boundaries (haze effects) but also nonlinear optical processes within the material. The optical parameters in the S-matrix were determined by modeling both a 2%-gallium-doped zinc oxide transparent conducting oxide and germanium-compounded a-Si:H (a-SiGe:H). Using the S-matrix equations, the photocurrent for an a-Si:H/a-SiGe:H tandem cell and the optical loss in semitransparent a-Si:H solar cells for use in building-integrated photovoltaic applications were analyzed. The developed S-matrix method can also be used as a general analysis tool for various thin film solar cells.

  8. Dual-Layer Nanostructured Flexible Thin-Film Amorphous Silicon Solar Cells with Enhanced Light Harvesting and Photoelectric Conversion Efficiency.

    Science.gov (United States)

    Lin, Yinyue; Xu, Zhen; Yu, Dongliang; Lu, Linfeng; Yin, Min; Tavakoli, Mohammad Mahdi; Chen, Xiaoyuan; Hao, Yuying; Fan, Zhiyong; Cui, Yanxia; Li, Dongdong

    2016-05-04

    Three-dimensional (3-D) structures have triggered tremendous interest for thin-film solar cells since they can dramatically reduce the material usage and incident light reflection. However, the high aspect ratio feature of some 3-D structures leads to deterioration of internal electric field and carrier collection capability, which reduces device power conversion efficiency (PCE). Here, we report high performance flexible thin-film amorphous silicon solar cells with a unique and effective light trapping scheme. In this device structure, a polymer nanopillar membrane is attached on top of a device, which benefits broadband and omnidirectional performances, and a 3-D nanostructure with shallow dent arrays underneath serves as a back reflector on flexible titanium (Ti) foil resulting in an increased optical path length by exciting hybrid optical modes. The efficient light management results in 42.7% and 41.7% remarkable improvements of short-circuit current density and overall efficiency, respectively. Meanwhile, an excellent flexibility has been achieved as PCE remains 97.6% of the initial efficiency even after 10 000 bending cycles. This unique device structure can also be duplicated for other flexible photovoltaic devices based on different active materials such as CdTe, Cu(In,Ga)Se2 (CIGS), organohalide lead perovskites, and so forth.

  9. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reyes, R [Facultad de Ingenieria Quimica y Textil, Universidad Nacional de Ingenieria, Av. Tupac Amaru SN, Lima (Peru); Cremona, M [Departamento de Fisica, PontifIcia Universidade Catolica de Rio de Janeiro, PUC-Rio, Cx. Postal 38071, Rio de Janeiro, RJ, CEP 22453-970 (Brazil); Achete, C A, E-mail: rreyes@uni.edu.pe [Departamento de Engenheria Metalurgica e de Materiais, Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro, RJ, CEP 21945-970 (Brazil)

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq{sub 3}) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq{sub 3}/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  10. Amorphization of silicon by femtosecond laser pulses

    International Nuclear Information System (INIS)

    Jia, Jimmy; Li Ming; Thompson, Carl V.

    2004-01-01

    We have used femtosecond laser pulses to drill submicron holes in single crystal silicon films in silicon-on-insulator structures. Cross-sectional transmission electron microscopy and energy dispersive x-ray analysis of material adjacent to the ablated holes indicates the formation of a layer of amorphous Si. This demonstrates that even when material is ablated using femtosecond pulses near the single pulse ablation threshold, sufficient heating of the surrounding material occurs to create a molten zone which solidifies so rapidly that crystallization is bypassed

  11. Scattering effect of the high-index dielectric nanospheres for high performance hydrogenated amorphous silicon thin-film solar cells.

    Science.gov (United States)

    Yang, Zhenhai; Gao, Pingqi; Zhang, Cheng; Li, Xiaofeng; Ye, Jichun

    2016-07-26

    Dielectric nanosphere arrays are considered as promising light-trapping designs with the capability of transforming the freely propagated sunlight into guided modes. This kinds of designs are especially beneficial to the ultrathin hydrogenated amorphous silicon (a-Si:H) solar cells due to the advantages of using lossless material and easily scalable assembly. In this paper, we demonstrate numerically that the front-sided integration of high-index subwavelength titanium dioxide (TiO2) nanosphere arrays can significantly enhance the light absorption in 100 nm-thick a-Si:H thin films and thus the power conversion efficiencies (PCEs) of related solar cells. The main reason behind is firmly attributed to the strong scattering effect excited by TiO2 nanospheres in the whole waveband, which contributes to coupling the light into a-Si:H layer via two typical ways: 1) in the short-waveband, the forward scattering of TiO2 nanospheres excite the Mie resonance, which focuses the light into the surface of the a-Si:H layer and thus provides a leaky channel; 2) in the long-waveband, the transverse waveguided modes caused by powerful scattering effectively couple the light into almost the whole active layer. Moreover, the finite-element simulations demonstrate that photocurrent density (Jph) can be up to 15.01 mA/cm(2), which is 48.76% higher than that of flat system.

  12. Surface morphology and grain analysis of successively industrially grown amorphous hydrogenated carbon films (a-C:H) on silicon

    Science.gov (United States)

    Catena, Alberto; McJunkin, Thomas; Agnello, Simonpietro; Gelardi, Franco M.; Wehner, Stefan; Fischer, Christian B.

    2015-08-01

    Silicon (1 0 0) has been gradually covered by amorphous hydrogenated carbon (a-C:H) films via an industrial process. Two types of these diamond-like carbon (DLC) coatings, one more flexible (f-DLC) and one more robust (r-DLC), have been investigated. Both types have been grown by a radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique with acetylene plasma. Surface morphologies have been studied in detail by atomic force microscopy (AFM) and Raman spectroscopy has been used to investigate the DLC structure. Both types appeared to have very similar morphology and sp2 carbon arrangement. The average height and area for single grains have been analyzed for all depositions. A random distribution of grain heights was found for both types. The individual grain structures between the f- and r-type revealed differences: the shape for the f-DLC grains is steeper than for the r-DLC grains. By correlating the average grain heights to the average grain areas for all depositions a limited region is identified, suggesting a certain regularity during the DLC deposition mechanisms that confines both values. A growth of the sp2 carbon entities for high r-DLC depositions is revealed and connected to a structural rearrangement of carbon atom hybridizations and hydrogen content in the DLC structure.

  13. Simultaneous optical and electrical modeling of plasmonic light trapping in thin-film amorphous silicon photovoltaic devices

    Science.gov (United States)

    Gandhi, Keyur K.; Nejim, Ahmed; Beliatis, Michail J.; Mills, Christopher A.; Henley, Simon J.; Silva, S. Ravi P.

    2015-01-01

    Rapid prototyping of photovoltaic (PV) cells requires a method for the simultaneous simulation of the optical and electrical characteristics of the device. The development of nanomaterial-enabled PV cells only increases the complexity of such simulations. Here, we use a commercial technology computer aided design (TCAD) software, Silvaco Atlas, to design and model plasmonic gold nanoparticles integrated in optoelectronic device models of thin-film amorphous silicon (a-Si:H) PV cells. Upon illumination with incident light, we simulate the optical and electrical properties of the cell simultaneously and use the simulation to produce current-voltage (J-V) and external quantum efficiency plots. Light trapping due to light scattering and localized surface plasmon resonance interactions by the nanoparticles has resulted in the enhancement of both the optical and electrical properties due to the reduction in the recombination rates in the photoactive layer. We show that the device performance of the modeled plasmonic a-Si:H PV cells depends significantly on the position and size of the gold nanoparticles, which leads to improvements either in optical properties only, or in both optical and electrical properties. The model provides a route to optimize the device architecture by simultaneously optimizing the optical and electrical characteristics, which leads to a detailed understanding of plasmonic PV cells from a design perspective and offers an advanced tool for rapid device prototyping.

  14. An investigation of optimal interfacial film condition for Cu-Mn alloy based source/drain electrodes in hydrogenated amorphous silicon thin film transistors

    Directory of Open Access Journals (Sweden)

    Haruhiko Asanuma

    2012-06-01

    Full Text Available To aid in developing next generation Cu-Mn alloy based source/drain interconnects for thin film transistor liquid crystal displays (TFT-LCDs, we have investigated the optimal structure of a pre-formed oxide layer on phosphorus doped hydrogenated amorphous silicon (n+a-Si:H that does not degrade TFT electrical properties. We use transmission electron microscopy (TEM and electron energy loss spectroscopy (EELS to examine composition depth profiles of and structural information for the Cu-Mn alloy/n+a-Si:H interface region. In aiming to achieve the same electrical properties as those of TFTs having conventional Mo source/drain electrodes, we have obtained three important findings: (1 in typical TFT-LCD manufacturing processes, no Mn complex oxide layer is formed because Mn cannot diffuse substantially into an n+a-Si:H surface during low temperature (below 300°C processes and the growth of Mn complex oxide layer would also be limited by the absence of excess oxygen species; (2 a pre-formed silicon oxide layer much thicker than 1 nm severely degrades TFT electrical properties and therefore an ultrathin (≈1 nm silicon oxide layer is required to prevent the degradation; (3 Cu diffuses into an n+a-Si:H layer at oxygen-deficient spots and thus uniform surface oxidation is required to prevent the diffusion.

  15. Characterization of amorphous hydrogenated carbon films ...

    Indian Academy of Sciences (India)

    Amorphous hydrogenated carbon films (-C:H) on -type (100) silicon wafers were prepared with a middle frequency pulsed unbalanced magnetron sputtering technique (MFPUMST) at different ratios of methane–argon gases. The band characteristics, mechanical properties as well as refractive index were measured by ...

  16. Characterization of amorphous hydrogenated carbon films ...

    Indian Academy of Sciences (India)

    †Key Laboratory of Radiation and Technology of Education Ministry of China, Institute of Nuclear Science and. Technology, Sichuan University, Chengdu 610064, P. R. China. MS received 14 March 2011; revised 29 October 2011. Abstract. Amorphous hydrogenated carbon films (a-C:H) on p-type (100) silicon wafers were ...

  17. Development of large area, high efficiency amorphous silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, K.S.; Kim, S.; Kim, D.W. [Yu Kong Taedok Institute of Technology (Korea, Republic of)

    1996-02-01

    The objective of the research is to develop the mass-production technologies of high efficiency amorphous silicon solar cells in order to reduce the costs of solar cells and dissemination of solar cells. Amorphous silicon solar cell is the most promising option of thin film solar cells which are relatively easy to reduce the costs. The final goal of the research is to develop amorphous silicon solar cells having the efficiency of 10%, the ratio of light-induced degradation 15% in the area of 1200 cm{sup 2} and test the cells in the form of 2 Kw grid-connected photovoltaic system. (author) 35 refs., 8 tabs., 67 figs.

  18. Raman spectra of amorphous silicon thin films deposited by glow discharge

    International Nuclear Information System (INIS)

    Bustarret, E.; Alvarez, F.; Brenzikofer, R.; Vilche Pena, A.; Chambouleyron, I.

    1983-01-01

    The local disorder present in films of a-Si:H and a-Si sub(x) N 1 - sub(x):H has been studied through first order Raman spectroscopy, using the 5145A line of an Argon laser in a backscattering geometry at room temperature. This allowed us to compare thin films deposited in two different reactors where the capacitively coupled glow-discharge was produced either in a 'cross field' or a 'parallel field' geometry. Gaseous mixtures of SiH 4 , N 2 , He and Ar have been used in both cases. The systematic variation of the preparation parameters leads to a whole class of 'alloys' including partially micro-crystallized films. (Author) [pt

  19. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui

    2015-04-09

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  20. Complex nano-patterning of structural, optical, electrical and electron emission properties of amorphous silicon thin films by scanning probe

    Czech Academy of Sciences Publication Activity Database

    Fait, Jan; Čermák, Jan; Stuchlík, Jiří; Rezek, Bohuslav

    2018-01-01

    Roč. 428, Jan (2018), s. 1159-1165 ISSN 0169-4332 R&D Projects: GA ČR GA15-01809S Institutional support: RVO:68378271 Keywords : amorphous silicon * nano-templates * nanostructures * electrical conductivity * electron emission * atomic force microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.387, year: 2016

  1. Preparation and electrochemical performance of copper foam-supported amorphous silicon thin films for rechargeable lithium-ion batteries

    International Nuclear Information System (INIS)

    Li Haixia; Cheng Fangyi; Zhu Zhiqiang; Bai Hongmei; Tao Zhanliang; Chen Jun

    2011-01-01

    Research highlights: → Amorphous Si thin films have been deposited on copper foam substrate by radio-frequency (rf) magnetron sputtering. → The as-prepared Si/Cu films with interconnected 3-dimensional structure are employed as anode materials of rechargeable lithium-ion batteries, showing that the electrode properties are greatly affected by the deposition temperature. → The film electrode deposited at an optimum temperature of 300 deg. C delivers a specific capacity of ∼2900 mAh/g and a coulombic efficiency above 95% at charge/discharge current density of 0.2C after 30 cycles. → The Li + diffusion coefficiency in copper foam-supported Si thin films is determined to be 2.36 x 10 -9 cm 2 /s. → The combination of rf magnetron sputtering and cooper foam substrate is an efficient route to prepare amorphous Si films with high capacity and cyclability due to the efficient ionic diffusion and interface contact with a good conductive current collector. - Abstract: Amorphous Si thin films, which have been deposited on copper foam by radio-frequency (rf) magnetron sputtering, are employed as anode materials of rechargeable lithium-ion batteries. The morphologies and structures of the as-prepared Si thin films are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray powder diffraction (XRD). Electrochemical performance of lithium-ion batteries with the as-prepared Si films as the anode materials is investigated by cyclic voltammetry and charge-discharge measurements. The results show that the electrode properties of the prepared amorphous Si films are greatly affected by the deposition temperature. The film electrode deposited at an optimum temperature of 300 deg. C can deliver a specific capacity of ∼2900 mAh/g and a coulombic efficiency above 95% at charge/discharge current density of 0.2C after 30 cycles. The Li + diffusion coefficiency in copper foam-supported Si thin films is determined to be 2.36 x 10 -9 cm

  2. Anisotropy of optical, electrical, and photoelectrical properties of amorphous hydrogenated silicon films modified by femtosecond laser irradiation

    Science.gov (United States)

    Amasev, D. V.; Khenkin, M. V.; Drevinskas, R.; Kazansky, P.; Kazanskii, A. G.

    2017-06-01

    Two types of independent anisotropic structures have been formed simultaneously in amorphous hydrogenated films by applying a femtosecond laser pulse to them, i.e., a structure with a period of several micrometers to several tens of micrometers and a structure with a period of several hundred nanometers. The formation mechanisms of these strictures are different, which allows us to orient them relative to each other in a desirable way. Both structures independently influence the optical properties of the modified films, which causes the diffraction of transmitted light and making the films polarization-sensitive. The conductivity of the modified films correlates with the mutual orientation of the anisotropic structures, whereas no interrelation between the photoconductivity and optical performance of the modified films has been observed.

  3. A new tevchnique for production of amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Andrade, A.M. de; Pereyra, I.; Sanematsu, M.S.; Corgnier, S.L.L.; Fonseca, F.J.

    1984-01-01

    It is presented a new technique for the production of amorphous silicon solar cells based on the development of thin films of a-Si in a reactor in which the decomposition of the sylane, induced by capacitively coupled RF, and the film deposition occur in separate chambers. (M.W.O.) [pt

  4. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  5. Amorphous silicon based radiation detectors

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D.; Fujieda, I.; Street, R.A.

    1991-07-01

    We describe the characteristics of thin(1 μm) and thick (>30μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs

  6. Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells

    Directory of Open Access Journals (Sweden)

    Yang-Shin Lin

    2011-01-01

    Full Text Available The amorphous silicon/amorphous silicon (a-Si/a-Si tandem solar cells have attracted much attention in recent years, due to the high efficiency and low manufacturing cost compared to the single-junction a-Si solar cells. In this paper, the tandem cells are fabricated by high-frequency plasma-enhanced chemical vapor deposition (HF-PECVD at 27.1 MHz. The effects of the recombination layer and the i-layer thickness matching on the cell performance have been investigated. The results show that the tandem cell with a p+ recombination layer and i2/i1 thickness ratio of 6 exhibits a maximum efficiency of 9.0% with the open-circuit voltage (Voc of 1.59 V, short-circuit current density (Jsc of 7.96 mA/cm2, and a fill factor (FF of 0.70. After light-soaking test, our a-Si/a-Si tandem cell with p+ recombination layer shows the excellent stability and the stabilized efficiency of 8.7%.

  7. Amorphous silicon prepared from silane-hydrogen mixture

    International Nuclear Information System (INIS)

    Pietruszko, S.M.

    1982-09-01

    Amorphous silicon films prepared from a d.c. discharge of 10% SiH 4 - 90% H 2 mixture are found to have properties similar to those made from 100% SiH 4 . These films are found to be quite stable against prolonged light exposure. The effect of nitrogen on the properties of these films was investigated. It was found that instead of behaving as a classical donor, nitrogen introduces deep levels in the material. Field effect experiments on a-Si:H films at the bottom (film-substrate interface) and the top (film-vacuum interface) of the film are also reported. (author)

  8. The investigation of ZnO:Al2O3/metal composite back reflectors in amorphous silicon germanium thin film solar cells

    International Nuclear Information System (INIS)

    Wang Guang-Hong; Zhao Lei; Yan Bao-Jun; Chen Jing-Wei; Wang Ge; Diao Hong-Wei; Wang Wen-Jing

    2013-01-01

    Different aluminum-doped ZnO (AZO)/metal composite thin films, including AZO/Ag/Al, AZO/Ag/nickel—chromium alloy (NiCr), and AZO/Ag/NiCr/Al, are utilized as the back reflectors of p—i—n amorphous silicon germanium thin film solar cells. NiCr is used as diffusion barrier layer between Ag and Al to prevent mutual diffusion, which increases the short circuit current density of solar cell. NiCr and NiCr/Al layers are used as protective layers of Ag layer against oxidation and sulfurization, the higher efficiency of solar cell is achieved. The experimental results show that the performance of a-SiGe solar cell with AZO/Ag/NiCr/Al back reflector is best. The initial conversion efficiency is achieved to be 8.05%

  9. Plasma deposition of amorphous silicon-based materials

    CERN Document Server

    Bruno, Giovanni; Madan, Arun

    1995-01-01

    Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Key Features * Focuses on the plasma chemistry of amorphous silicon-based materials * Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced * Features an international group of contributors * Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices.

  10. Amorphous SiO {sub x} nanowires grown on silicon (100) substrates via rapid thermal process of nanodiamond films

    Energy Technology Data Exchange (ETDEWEB)

    Liang Xingbo [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Wang Lei [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Yang Deren [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)]. E-mail: mseyang@zju.edu.cn

    2006-05-01

    Rapid thermal process (RTP) has been carried out on the deposited nanocrystalline diamond (NCD) films. The RTP treatments performed at 800 and 1200 deg. C have been shown to exert prominent influence on the morphology and structure of the NCD films. The loss of material at grain boundaries has been observed at both 800 and 1200 deg. C RTP treatments. Large-scale amorphous SiO {sub x} nanowires with diameters of 30-50 nm and length up to 10 {mu}m were synthesized after RTP treatment at 1200 deg. C for 60 s. The synthesized nanowires were characterized in detail by scanning electron microscopy, transmission electron microscopy, selected area electron diffraction and energy-dispersed X-ray spectrometry analysis. A possible growth mechanism has been proposed to explain the observed phenomenon.

  11. Nanostructural characterization of amorphous diamondlike carbon films

    Energy Technology Data Exchange (ETDEWEB)

    SIEGAL,MICHAEL P.; TALLANT,DAVID R.; MARTINEZ-MIRANDA,L.J.; BARBOUR,J. CHARLES; SIMPSON,REGINA L.; OVERMYER,DONALD L.

    2000-01-27

    Nanostructural characterization of amorphous diamondlike carbon (a-C) films grown on silicon using pulsed-laser deposition (PLD) is correlated to both growth energetic and film thickness. Raman spectroscopy and x-ray reflectivity probe both the topological nature of 3- and 4-fold coordinated carbon atom bonding and the topographical clustering of their distributions within a given film. In general, increasing the energetic of PLD growth results in films becoming more ``diamondlike'', i.e. increasing mass density and decreasing optical absorbance. However, these same properties decrease appreciably with thickness. The topology of carbon atom bonding is different for material near the substrate interface compared to material within the bulk portion of an a-C film. A simple model balancing the energy of residual stress and the free energies of resulting carbon topologies is proposed to provide an explanation of the evolution of topographical bonding clusters in a growing a-C film.

  12. Additives to silane for thin film silicon photovoltaic devices

    Science.gov (United States)

    Hurley, Patrick Timothy; Ridgeway, Robert Gordon; Hutchison, Katherine Anne; Langan, John Giles

    2013-09-17

    Chemical additives are used to increase the rate of deposition for the amorphous silicon film (.alpha.Si:H) and/or the microcrystalline silicon film (.mu.CSi:H). The electrical current is improved to generate solar grade films as photoconductive films used in the manufacturing of Thin Film based Photovoltaic (TFPV) devices.

  13. Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices

    OpenAIRE

    Schriver, Maria Christine

    2012-01-01

    A novel solar cell architecture made completely from the earth abundant elements silicon and carbon has been developed. Hydrogenated amorphous silicon (aSi:H), rather than crystalline silicon, is used as the active material due to its high absorption through a direct band gap of 1.7eV, well matched to the solar spectrum to ensure the possibility of improved cells in this architecture with higher efficiencies. The cells employ a Schottky barrier design wherein the amorphous silicon absorber la...

  14. Optimization of charge-carrier generation in amorphous-silicon thin-film tandem solar cell backed by two-dimensional metallic surface-relief grating

    Science.gov (United States)

    Civiletti, Benjamin J.; Anderson, Tom H.; Ahmad, Faiz; Monk, Peter B.; Lakhtakia, Akhlesh

    2017-08-01

    The rigorous coupled-wave approach was implemented in a three-dimensional setting to calculate the chargecarrier-generation rate in a thin-film solar cell with multiple amorphous-silicon p-i-n junctions. The solar cell comprised a front antireflection window; three electrically isolated p-i-n junctions in tandem; and a periodically corrugated silver back-reflector with hillock-shaped corrugations arranged on a hexagonal lattice. The differential evolution algorithm (DEA) was used to maximize the charge-carrier-generation rate over a set of selected optical and electrical parameters. This optimization exercise minimized the bandgap of the topmost i-layer but all other parameters turned out to be uninfluential. More importantly, the exercise led to a configuration that would very likely render the solar cell inefficient. Therefore, another optimization exercise was conducted to maximize power density. The resulting configuration was optimal over all parameters.

  15. Electron field emission from amorphous semiconductor thin films

    International Nuclear Information System (INIS)

    Forrest, R.D.

    2001-01-01

    The flat panel display market requires new and improved technologies in order to keep up with the requirements of modem lifestyles. Electron field emission from thin film amorphous semiconductors is potentially such a technology. For this technology to become viable, improvements in the field emitting properties of these materials must be achieved. To this end, it is important that a better understanding of the emission mechanisms responsible is attained. Amorphous carbon thin films, amorphous silicon thin films and other materials have been deposited, in-house and externally. These materials have been characterised using ellipsometry, profilometry, optical absorption, scanning electron microscopy, atomic force microscopy, electron paramagnetic resonance and Rutherford backscattering spectroscopy. An experimental system for evaluating the electron field emitting performance of thin films has been developed. In the process of developing thin film cathodes in this study, it has been possible to add a new and potentially more useful semiconductor, namely amorphous silicon, to the family of cold cathode emitters. Extensive experimental field emission data from amorphous carbon thin films, amorphous silicon thin films and other materials has been gathered. This data has been used to determine the mechanisms responsible for the observed electron emission. Preliminary computer simulations using appropriate values for the different material properties have exhibited emission mechanisms similar to those identified by experiment. (author)

  16. Atomic hydrogen induced defect kinetics in amorphous silicon

    NARCIS (Netherlands)

    Peeters, F. J. J.; Zheng, J.; Aarts, I. M. P.; Pipino, A. C. R.; Kessels, W. M. M.; van de Sanden, M. C. M.

    2017-01-01

    Near-infrared evanescent-wave cavity ring-down spectroscopy (CRDS) has been applied to study the defect evolution in an amorphous silicon (a-Si:H) thin film subjected to a directed beam of atomic H with a flux of (0.4–2) × 1014 cm−2 s−1. To this end, a 42 ± 2 nm a-Si:H film was grown on the total

  17. Development of Amorphous/Microcrystalline Silicon Tandem Thin-Film Solar Modules with Low Output Voltage, High Energy Yield, Low Light-Induced Degradation, and High Damp-Heat Reliability

    OpenAIRE

    Chin-Yi Tsai; Chin-Yao Tsai

    2014-01-01

    In this work, tandem amorphous/microcrystalline silicon thin-film solar modules with low output voltage, high energy yield, low light-induced degradation, and high damp-heat reliability were successfully designed and developed. Several key technologies of passivation, transparent-conducting-oxide films, and cell and segment laser scribing were researched, developed, and introduced into the production line to enhance the performance of these low-voltage modules. A 900 kWp photovoltaic system w...

  18. Optical properties of amorphous silicon: Some problem areas

    International Nuclear Information System (INIS)

    Ravindra, N.M.; Chelle, F. de; Ance, C.; Ferraton, J.P.; Berger, J.M.; Coulibaly, S.P.

    1983-08-01

    In this presentation we essentially attempt to throw light on some problem areas concerning the various optical properties of amorphous silicon. The problems seem to emerge from the classical methods employed to determine the optical properties like the optical gap, urbach tail parameter and other related characteristics. Additional problems have emerged in recent years by virtue of many attempts to generalize the property-behaviour relationships for amorphous silicon without attributing any importance to the method of preparation of the films. It should be noted here that although many authors believe disorder to be the controlling parameter, we are of the opinion that at least for films containing fairly large concentrations of hydrogen, the hydrogen concentration has an equally important role to play. The present study has been carried out for films prepared by glow-discharge and chemical vapour deposition. (author)

  19. Crystallization of amorphous silicon thin-film on glass substrate preheated at 650 Degree-Sign C using Xe arc flash of 400 {mu}s

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Dong-Hyun [Department of Mechanical and System Design Engineering, Hongik University, 72-1 Sangsoo-dong, Mapo-koo, Seoul 121-791 (Korea, Republic of); Kim, Byung-Kuk [Viatron Technologies, Suwon Industrial Complex, 972 Gosaek-dong, Kwonsun-koo, Suwon 441-813 (Korea, Republic of); Kim, Hyoung June [Department of Materials Science and Engineering, Hongik University, 72-1 Sangsoo-dong, Mapo-koo, Seoul 121-791 (Korea, Republic of); Park, Seungho, E-mail: spark@hongik.ac.kr [Department of Mechanical and System Design Engineering, Hongik University, 72-1 Sangsoo-dong, Mapo-koo, Seoul 121-791 (Korea, Republic of)

    2012-08-31

    Experimental and theoretical investigations on flash lamp annealing (FLA) of amorphous silicon (a-Si) film on glass were carried out with a view to practical applications in large-window display industries. A Xe arc flash lamp of 950 mm in length and 22 mm in bore diameter was applied with nominal input voltage of 7 kV and flash duration of 400 {mu}s. Prior to the annealing process, the specimen for FLA was preheated at 650 Degree-Sign C, which was very close to the service temperature of the glass specimen used in this study. By employing a focusing elliptic reflector, maximum light energy density of up to 8.4 J/cm{sup 2} could be attained with an active exposure width of 2 cm. Crystallization of a-Si could be achieved in solid-phase by applying a flash beam with light density of at least 5 J/cm{sup 2}, and its phase-transition characteristics that varied with energy densities could be explained by theoretically estimated temperature fields. Electron microscopy observations confirmed that solid-phase crystallization preceded melting of a-Si due to relatively long flashing (heating) duration of 400 {mu}s, which was comparable to solid-phase crystal-growth times at elevated temperatures. - Highlights: Black-Right-Pointing-Pointer Flash lamp annealing of amorphous silicon (a-Si) on glass for large-scale displays Black-Right-Pointing-Pointer Xe-arc flash lamp of 950 mm in length and 22 mm in bore diameter Black-Right-Pointing-Pointer Flash duration of 400 {mu}s at nominal input voltage of 7 kV Black-Right-Pointing-Pointer Solid-phase crystallization precedes melting of a-Si due to long flashing duration.

  20. Ab initio simulation of amorphous silicon

    International Nuclear Information System (INIS)

    Cooper, N.C.; McKenzie, D.R.; Goringe, C.M.

    1999-01-01

    Full text: A first-principles Car-Parrinello molecular dynamics simulation of amorphous silicon is presented. Density Functional Theory is used to describe the forces between the atoms in a 64 atom supercell which is periodically repeated throughout space in order to generate an infinite network of atoms (a good approximation to a real solid). A quench from the liquid phase is used to achieve a quenched amorphous structure, which is subjected to an annealing cycle to improve its stability. The final, annealed network is in better agreement with experiment than any previous simulation of amorphous silicon. Significantly, the predicted average first-coordination numbers of 3.56 and 3.84 for the quenched and annealed structures from this simulation agree very closely with the experimental values of 3.55 and 3.90 respectively, whereas all previous simulations yielded first coordination numbers greater than 4. This improved agreement in coordination numbers is important because it supports the experimental finding that dangling bonds (which are associated with under-coordinated atoms) are more prevalent than floating bonds (the strained, longer bond of a five coordinate atom) in pure amorphous silicon. Finally, the effect of adding hydrogen to amorphous silicon was investigated by specifically placing hydrogen atoms at the likely defect sites. After a structural relaxation to optimise the positions of these hydrogen atoms, the localised electronic states associated with these defects are absent. Thus hydrogen is responsible for removing these defect states (which are able to trap carriers) from the edge of the band gap of the amorphous silicon. These results confirm the widely held ideas about the effect of hydrogen in producing remarkable improvements in the electronic properties of amorphous silicon

  1. Amorphous silicon detectors in positron emission tomography

    International Nuclear Information System (INIS)

    Conti, M.; Perez-Mendez, V.

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters ε 2 τ's are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs

  2. Amorphous silicon detectors in positron emission tomography

    Energy Technology Data Exchange (ETDEWEB)

    Conti, M. (Istituto Nazionale di Fisica Nucleare, Pisa (Italy) Lawrence Berkeley Lab., CA (USA)); Perez-Mendez, V. (Lawrence Berkeley Lab., CA (USA))

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters {epsilon}{sup 2}{tau}'s are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs.

  3. Amorphous Silicon: Flexible Backplane and Display Application

    Science.gov (United States)

    Sarma, Kalluri R.

    Advances in the science and technology of hydrogenated amorphous silicon (a-Si:H, also referred to as a-Si) and the associated devices including thin-film transistors (TFT) during the past three decades have had a profound impact on the development and commercialization of major applications such as thin-film solar cells, digital image scanners and X-ray imagers and active matrix liquid crystal displays (AMLCDs). Particularly, during approximately the past 15 years, a-Si TFT-based flat panel AMLCDs have been a huge commercial success. a-Si TFT-LCD has enabled the note book PCs, and is now rapidly replacing the venerable CRT in the desktop monitor and home TV applications. a-Si TFT-LCD is now the dominant technology in use for applications ranging from small displays such as in mobile phones to large displays such as in home TV, as well-specialized applications such as industrial and avionics displays.

  4. Research and development of photovoltaic power system. Study on growth mechanism of a-Si:H and preparation of the stable, high quality films; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon no seimaku kiko to kohinshitsuka

    Energy Technology Data Exchange (ETDEWEB)

    Hirose, M. [Hiroshima University, Hiroshima (Japan). Faculty of Engineering

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on a film forming mechanism for amorphous silicon for solar cells and its quality improvement. In in-situ observation on plasma CVD surface reaction by using the total reflection infrared absorbing spectroscopy, an observation on a real time basis was performed on the reaction process of an a-Si:H surface in contact with gas mixture plasma composed of SiH4 + CH4. In microscopic observation on initial processes of amorphous silicon growth, surface morphological change before and after a-Si:H deposition at 200{degree}C was observed by using an inter-atomic force microscope. The observation verified that a-Si:H has grown to an atomic layer. In research on defect density in a-Si:H fabricated under high-speed film forming conditions, analysis was made on correlation between the film forming speed at 250{degree}C and defect density in the film. Other research works include those on a high-quality a-SiGe:H film fabricated by using the nanometer film forming/hydrogen plasma annealing method, modulated doping into multi-layer films of a-Si:H/a-Ge:H, and thin film transistor using very thin multi layer films of a-Si:H/a-Ge:H. 5 refs., 12 figs.

  5. FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Conde, J.C., E-mail: jconde@uvigo.es [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Martin, E. [Dpto. Mecanica, Maquinas, Motores Termicos y Fluidos, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Stefanov, S. [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Alpuim, P. [Departamento de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Chiussi, S. [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer nc-Si:H is a material with growing importance for a large-area of nano-electronic, photovoltaic or biomedical devices. Black-Right-Pointing-Pointer UV-ELA technique causes a rapid heating that provokes the H{sub 2} desorption from the Si surface and bulk material. Black-Right-Pointing-Pointer Next, diffusion of P doped nc-Si films and eventually, for high energy densities would be possible to reach the melting point. Black-Right-Pointing-Pointer These multilayer structures consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) films deposited on SiO{sub 2}. Black-Right-Pointing-Pointer To optimize parameters involved in this processing, FEM numerical analysis of multilayer structures have been performed. Black-Right-Pointing-Pointer The numerical results are compared with exhaustive characterization of the experimental results. - Abstract: UV excimer laser annealing (UV-ELA) is an alternative annealing process that, during the last few years, has gained enormous importance for the CMOS nano-electronic technologies, with the ability to provide films and alloys with electrical and optical properties to fit the desired device performance. The UV-ELA of amorphous (a-) and/or doped nano-crystalline (nc-) silicon films is based on the rapid (nanoseconds) formation of temperature profiles caused by laser radiation that is absorbed in the material and lead to crystallisation, diffusion in solid or even in liquid phase. To achieve the desired temperature profiles and to optimize the parameters involved in the processing of hydrogenated nanocrystalline silicon (nc-Si:H) films with the UV-ELA, a numerical analysis by finite element method (FEM) of a multilayer structure has been performed. The multilayer structures, consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) layers, deposited on a glass substrate, has also been experimentally analyzed. Temperature profiles caused by 193 nm radiation with 25

  6. Hydrogen-free amorphous silicon with no tunneling states.

    Science.gov (United States)

    Liu, Xiao; Queen, Daniel R; Metcalf, Thomas H; Karel, Julie E; Hellman, Frances

    2014-07-11

    The ubiquitous low-energy excitations, known as two-level tunneling systems (TLSs), are one of the universal phenomena of amorphous solids. Low temperature elastic measurements show that e-beam amorphous silicon (a-Si) contains a variable density of TLSs which diminishes as the growth temperature reaches 400 °C. Structural analyses show that these a-Si films become denser and more structurally ordered. We conclude that the enhanced surface energetics at a high growth temperature improved the amorphous structural network of e-beam a-Si and removed TLSs. This work obviates the role hydrogen was previously thought to play in removing TLSs in the hydrogenated form of a-Si and suggests it is possible to prepare "perfect" amorphous solids with "crystal-like" properties for applications.

  7. Carrier mobilities in microcrystalline silicon films

    International Nuclear Information System (INIS)

    Bronger, T.; Carius, R.

    2007-01-01

    For a better understanding of electronic transport mechanisms in thin-film silicon solar cell quality films, we have investigated the Hall mobility for electrons in microcrystalline/amorphous silicon over a range of crystallinities and doping concentrations. We find that Hall mobility increases with increasing doping concentration in accordance with earlier measurements. With increasing amorphous fraction, the measured mobility decreases suggesting a negative influence of the additional disorder. The results suggest a differential mobility model in which mobility depends on the energy level of the carriers that contribute to the electrical current

  8. Dynamics of hydrogen in hydrogenated amorphous silicon

    Indian Academy of Sciences (India)

    weak (strained) Si–Si bond thereby apparently enhancing the hydrogen diffusion and increasing the light-induced dangling bonds. Keywords. Hydrogenated amorphous silicon; metastable electronic states; hydrogen diffusion. PACS Nos 61.43.Dq; 66.30.-h; 71.23.Cq. 1. Introduction. Hydrogen passivation of dangling bonds ...

  9. Dynamics of hydrogen in hydrogenated amorphous silicon

    Indian Academy of Sciences (India)

    c0, c being the instantaneous concentration at a local point and c0, the average concentration of hydrogen in the hydrogenated amorphous silicon. If the system is both incompressible and isotropic, the change in Helmholtz free energy due to fluctuations in the local concentration of hydrogen is given as. 122. Pramana – J.

  10. A novel low noise hydrogenated amorphous silicon pixel detector

    OpenAIRE

    Moraes, D.; Anelli, G.; Despeisse, M.; Dissertori, G.; Garrigos, A.; Jarron, P.; Kaplon. J.; Miazza, C.; Shah, Arvind; Viertel, G. M.; Wyrsch, Nicolas

    2008-01-01

    Firsts results on particle detection using a novel silicon pixel detector are presented. The sensor consists of an array of 48 square pixels with 380 μm pitch based on a n–i–p hydrogenated amorphous silicon (a-Si:H) film deposited on top of a VLSI chip. The deposition was performed by VHF-PECVD, which enables high rate deposition up to 2 nm/s. Direct particle detection using beta particles from 63Ni and 90Sr sources was performed.

  11. Nanostructural characterization of amorphous diamondlike carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Siegal, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Tallant, D. R. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Martinez-Miranda, L. J. [University of Maryland, Department of Materials and Nuclear Engineering, College Park, Maryland 20742 (United States); Barbour, J. C. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Simpson, R. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Overmyer, D. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

    2000-04-15

    Nanostructural characterization of amorphous diamondlike carbon (a-C) films grown on silicon using pulsed-laser deposition (PLD) is correlated to both growth energetics and film thickness. Raman spectroscopy and x-ray reflectivity probe both the topological nature of three- and four-fold coordinated carbon atom bonding and the topographical clustering of their distributions within a given film. In general, increasing the energetics of PLD growth results in films becoming more ''diamondlike,'' i.e., increasing mass density and decreasing optical absorbance. However, these same properties decrease appreciably with thickness. The topology of carbon atom bonding is different for material near the substrate interface compared to material within the bulk portion of an a-C film. A simple model balancing the energy of residual stress and the free energies of resulting carbon topologies is proposed to provide an explanation of the evolution of topographical bonding clusters in a growing a-C film. (c) 2000 The American Physical Society.

  12. Transmission Electron Microscopy of Amorphous Tandem Thin-Film Silicon Modules Produced by A Roll-to-Roll Process on Plastic Foil

    DEFF Research Database (Denmark)

    Couty, P.; Duchamp, Martial; Söderström, K.

    2011-01-01

    An improvement of the photo-current is expected when amorphous silicon solar cells are grown on a ZnO texture. A full understanding of the relationship between cell structure and electrical performance is essential for the rapid development of high efficiency VHF-tandem cells on textured substrat...

  13. Thin-film silicon solar cell technology

    Czech Academy of Sciences Publication Activity Database

    Shah, A. V.; Schade, H.; Vaněček, Milan; Meier, J.; Vallat-Sauvain, E.; Wyrsch, N.; Kroll, U.; Droz, C.; Bailat, J.

    2004-01-01

    Roč. 12, - (2004), s. 113-142 ISSN 1062-7995 R&D Projects: GA MŽP SN/320/11/03 Institutional research plan: CEZ:AV0Z1010914 Keywords : thin-film silicon modules * hydrogenerated amorphous silicon(a-Si:H) * hydrogenerated microcrystalline (ćc-Si:H) * transparent conductive oxydes(TCOs) * building -integrated photovoltaics(BIPV) Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.196, year: 2004

  14. On the use of a charged tunnel layer as a hole collector to improve the efficiency of amorphous silicon thin-film solar cells

    Science.gov (United States)

    Ke, Cangming; Peters, Ian Marius; Sahraei, Nasim; Aberle, Armin G.; Stangl, Rolf

    2015-06-01

    A new concept, using a negatively charged tunnel layer as a hole collector, is proposed and theoretically investigated for application in amorphous silicon thin-film solar cells. The concept features a glass/transparent conductive oxide/ultra-thin negatively charged tunnel layer/intrinsic a-Si:H/n-doped a-Si:H/metal structure. The key feature of this so called t+-i-n structure is the introduction of a negatively charged tunnel layer (attracting holes from the intrinsic absorber layer), which substitutes the highly recombination active p-doped a-Si:H layer in a conventional p-i-n configuration. Atomic layer deposited aluminum oxide (ALD AlOx) is suggested as a potential candidate for such a tunnel layer. Using typical ALD AlOx parameters, a 27% relative efficiency increase (i.e., from 9.7% to 12.3%) is predicted theoretically for a single-junction a-Si:H solar cell on a textured superstrate. This prediction is based on parameters that reproduce the experimentally obtained external quantum efficiency and current-voltage characteristics of a conventional processed p-i-n a-Si:H solar cell, reaching 9.7% efficiency and serving as a reference. Subsequently, the p-doped a-Si:H layer is replaced by the tunnel layer (studied by means of numerical device simulation). Using a t+-i-n configuration instead of a conventional p-i-n configuration will not only increase the short-circuit current density (from 14.4 to 14.9 mA/cm2, according to our simulations), it also enhances the open-circuit voltage and the fill factor (from 917 mV to 1.0 V and from 74% to 83%, respectively). For this concept to work efficiently, a high work function front electrode material or a high interface charge is needed.

  15. Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

    Directory of Open Access Journals (Sweden)

    Jia Ge

    2014-01-01

    Full Text Available We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper. The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen, silane, and carbon dioxide in an industrial remote inductively coupled plasma platform. Through the investigation on CO2 partial pressure and process temperature, excellent surface passivation quality and optical properties are achieved. It is found that the hydrogen content in the film is much higher than what is commonly reported in intrinsic amorphous silicon due to oxygen incorporation. The observed slow depletion of hydrogen with increasing temperature greatly enhances its process window as well. The effective lifetime of symmetrically passivated samples under the optimal condition exceeds 4.7 ms on planar n-type Czochralski silicon wafers with a resistivity of 1 Ωcm, which is equivalent to an effective surface recombination velocity of less than 1.7 cms−1 and an implied open-circuit voltage (Voc of 741 mV. A comparison with several high quality passivation schemes for solar cells reveals that the developed inductively coupled plasma deposited films show excellent passivation quality. The excellent optical property and resistance to degradation make it an excellent substitute for industrial heterojunction silicon solar cell production.

  16. Development of Amorphous/Microcrystalline Silicon Tandem Thin-Film Solar Modules with Low Output Voltage, High Energy Yield, Low Light-Induced Degradation, and High Damp-Heat Reliability

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film solar modules with low output voltage, high energy yield, low light-induced degradation, and high damp-heat reliability were successfully designed and developed. Several key technologies of passivation, transparent-conducting-oxide films, and cell and segment laser scribing were researched, developed, and introduced into the production line to enhance the performance of these low-voltage modules. A 900 kWp photovoltaic system with these low-voltage panels was installed and its performance ratio has been simulated and projected to be 92.1%, which is 20% more than the crystalline silicon and CdTe counterparts.

  17. Fluctuation microscopy analysis of amorphous silicon models

    International Nuclear Information System (INIS)

    Gibson, J.M.; Treacy, M.M.J.

    2017-01-01

    Highlights: • Studied competing computer models for amorphous silicon and simulated fluctuation microscopy data. • Show that only paracrystalline/random network composite can fit published data. • Specifically show that pure random network or random network with void models do not fit available data. • Identify a new means to measure volume fraction of ordered material. • Identify unreported limitations of the Debye model for simulating fluctuation microscopy data. - Abstract: Using computer-generated models we discuss the use of fluctuation electron microscopy (FEM) to identify the structure of amorphous silicon. We show that a combination of variable resolution FEM to measure the correlation length, with correlograph analysis to obtain the structural motif, can pin down structural correlations. We introduce the method of correlograph variance as a promising means of independently measuring the volume fraction of a paracrystalline composite. From comparisons with published data, we affirm that only a composite material of paracrystalline and continuous random network that is substantially paracrystalline could explain the existing experimental data, and point the way to more precise measurements on amorphous semiconductors. The results are of general interest for other classes of disordered materials.

  18. Analysis of IV characteristics of solar cells made of hydrogenated amorphous, polymorphous and microcrystalline silicon

    International Nuclear Information System (INIS)

    Hamadeh, H.

    2009-03-01

    The IV characteristics of pin solar cells made of amorphous, polymorphous and microcrystalline silicon were investigated. The temperature dependence was measured in the temperature range between 150 K and 395 K. This range covers the most terrestrial applications condition. Using simplex procedure, the IV parameter of the cells were deduce using line fitting. It has been shown that polymorphous silicon shows electrical properties that are close to properties of microcrystalline silicon but as it is well known, polymorphous silicon shows higher absorption similar to amorphous silicon. The polymorphous silicon solar cells showed higher efficiencies, lower shunting and higher filling factors. In the above mentioned temperature range, polymorphous silicon is the better material for the manufacturing of thin film hydrogenated silicon pin solar cells. More investigations concerning the structural properties are necessary to make stronger conclusions in regards to the stability of the material, what we hope to do in the future. (author)

  19. Optical properties of amorphous hydrogenated carbon films

    Science.gov (United States)

    Chen, Jing Qiu

    Carbon can be formed either as fully crystalline structures, such as diamond, graphite, and fullerene (C60). or as mostly amorphous structures, like amorphous hydrogenated carbon (a-C:H). A study was made of a-C:H films which had been deposited by plasma enhanced chemical vapor deposition (PECVD) using CH4, H2 and Ar (or N2 for doping) gas mixtures. Each film exhibits unique physical, optical and electronic properties dependent upon the specific deposition parameters. The study is intended to extend our understanding of the properties of a-C:H films. Samples prepared by James Johnson, similar to those used in his previous studies (using mainly 4 separate sets of deposition parameters), were evaluated along with other samples which were unique to this study. Film preparation parameters were varied to allow an examination of the effects induced through the variation of deposition power level, partial substitution of nitrogen for methane in the deposition process gasses and post-deposition thermal annealing. The film optical properties were evaluated using combination of non-destructive test methods, including Raman scattering, photoluminescence (PL), optical absorption and photoluminescence excitation (PLE) spectroscopies. Different PL responses at low temperature (6 K) were recorded for doped and/or annealed samples deriving from the main set of samples. Two new features at 564 and 637 nm of nitrogen doped films replaced the 597 and 703 nm of undoped films. For the first time, three Raman phonon peaks were observed in a nitrogen doped and annealed film. Additional FTIR data indicated that the third Raman phonon peak was associated with CH2 and CH3 bonding structures. The Raman scattering data contributed to an improved understanding of the two-phase (sp2, sp3) model developed by Robertson. Optical absorption measurements could only be obtained for the films deposited on fused quartz. All other measurements were made on films deposited on silicon, which is opaque in

  20. Development of Tandem Amorphous/Microcrystalline Silicon Thin-Film Large-Area See-Through Color Solar Panels with Reflective Layer and 4-Step Laser Scribing for Building-Integrated Photovoltaic Applications

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film large-area see-through color solar modules were successfully designed and developed for building-integrated photovoltaic applications. Novel and key technologies of reflective layers and 4-step laser scribing were researched, developed, and introduced into the production line to produce solar panels with various colors, such as purple, dark blue, light blue, silver, golden, orange, red wine, and coffee. The highest module power is 105 W and the highest visible light transmittance is near 20%.

  1. Medical imaging applications of amorphous silicon

    International Nuclear Information System (INIS)

    Mireshghi, A.; Drewery, J.S.; Hong, W.S.; Jing, T.; Kaplan, S.N.; Lee, H.K.; Perez-Mendez, V.

    1994-07-01

    Two dimensional hydrogenated amorphous silicon (a-Si:H) pixel arrays are good candidates as flat-panel imagers for applications in medical imaging. Various performance characteristics of these imagers are reviewed and compared with currently used equipments. An important component in the a-Si:H imager is the scintillator screen. A new approach for fabrication of high resolution CsI(Tl) scintillator layers, appropriate for coupling to a-Si:H arrays, are presented. For nuclear medicine applications, a new a-Si:H based gamma camera is introduced and Monte Carlo simulation is used to evaluate its performance

  2. Structural morphology of amorphous conducting carbon film

    Indian Academy of Sciences (India)

    Unknown

    in nanotubes and sp3 rich amorphous carbons for their application in field emission, device application, etc in- vestigations on sp2 rich amorphous carbon forms are very few. Though DLC films have potential application in field emission (FE) due to their low threshold voltage, the carbon centres, which are believed to play ...

  3. Hydrogenated amorphous silicon coatings may modulate gingival cell response

    Science.gov (United States)

    Mussano, F.; Genova, T.; Laurenti, M.; Munaron, L.; Pirri, C. F.; Rivolo, P.; Carossa, S.; Mandracci, P.

    2018-04-01

    Silicon-based materials present a high potential for dental implant applications, since silicon has been proven necessary for the correct bone formation in animals and humans. Notably, the addition of silicon is effective to enhance the bioactivity of hydroxyapatite and other biomaterials. The present work aims to expand the knowledge of the role exerted by hydrogen in the biological interaction of silicon-based materials, comparing two hydrogenated amorphous silicon coatings, with different hydrogen content, as means to enhance soft tissue cell adhesion. To accomplish this task, the films were produced by plasma enhanced chemical vapor deposition (PECVD) on titanium substrates and their surface composition and hydrogen content were analyzed by means of X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared spectrophotometry (FTIR) respectively. The surface energy and roughness were measured through optical contact angle analysis (OCA) and high-resolution mechanical profilometry respectively. Coated surfaces showed a slightly lower roughness, compared to bare titanium samples, regardless of the hydrogen content. The early cell responses of human keratinocytes and fibroblasts were tested on the above mentioned surface modifications, in terms of cell adhesion, viability and morphometrical assessment. Films with lower hydrogen content were endowed with a surface energy comparable to the titanium surfaces. Films with higher hydrogen incorporation displayed a lower surface oxidation and a considerably lower surface energy, compared to the less hydrogenated samples. As regards mean cell area and focal adhesion density, both a-Si coatings influenced fibroblasts, but had no significant effects on keratinocytes. On the contrary, hydrogen-rich films increased manifolds the adhesion and viability of keratinocytes, but not of fibroblasts, suggesting a selective biological effect on these cells.

  4. Planarization of amorphous silicon thin film transistors for high-aperture-ratio and large-area active-matrix liquid crystal displays

    Science.gov (United States)

    Lan, Je-Hsiung

    The reduction of the backlight power consumption and the improvement of the display image uniformity for future large-area and high-resolution active-matrix liquid- crystal displays (AM-LCDs) are very important. One possible method to achieve the former goal is to increase the pixel electrode aperture-ratio. This can be realized by overlapping the pixel electrode with both gate/data buslines. While for the latter, reduction of the RC-delay by using a low resistance gate metal line is the key. Both of these approaches can be realized by using planarization technology. In this dissertation, the planarization technology based on low dielectric constant organic polymer, benzocyclobutene (BCB), is demonstrated, and this technology has been successfully applied to hydrogenated amorphous-silicon (a-Si:H) thin-film transistor (TFT) arrays and thick metal gate buslines/electrodes. Through the planarization technology, a high-aperture-ratio (HAR) pixel electrode structure has been fabricated. The parasitic capacitance and crosstalk issues in the HAR pixel electrode have been studied through interconnect analysis and circuit simulation. The impact of the parasitic capacitance on display performances, such as feedthrough voltage, vertical crosstalk, pixel electrode aperture-ratio, pixel charging behavior, and gate busline RC-delay issues, has been thoroughly discussed. Some key issues during the process integration of the HAR pixel electrode structure have been addressed. These include the BCB contact via formation, the patterning of the ITO pixel electrodes on BCB layer, the selection of Ar plasma treatment conditions for BCB surface, and the optical transmittance evaluation of the ITO/BCB double-layer structure. In addition, the BCB passivation effects on back-channel etched type a-Si:H TFTs have been investigated. It is found that there is no degradation in the TFT electrical performance and reliability after the BCB passivation. Finally, the planarization technology is

  5. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2014-02-01

    Full Text Available In this study, silicon nitride (SiNx thin films were deposited on polyimide (PI substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD system. The gallium-doped zinc oxide (GZO thin films were deposited on PI and SiNx/PI substrates at room temperature (RT, 100 and 200 °C by radio frequency (RF magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~1000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI.

  6. Three-Terminal Amorphous Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Cheng-Hung Tai

    2011-01-01

    Full Text Available Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell was 9.0%. Furthermore, an efficiency of 11.7% was achieved by thickness optimization of the three-terminal solar cell.

  7. Amorphous Dielectric Thin Films with Extremely Low Mechanical Loss

    Directory of Open Access Journals (Sweden)

    Liu X.

    2015-04-01

    Full Text Available The ubiquitous low-energy excitations are one of the universal phenomena of amorphous solids. These excitations dominate the acoustic, dielectric, and thermal properties of structurally disordered solids. One exception has been a type of hydrogenated amorphous silicon (a-Si:H with 1 at.% H. Using low temperature elastic and thermal measurements of electron-beam evap-orated amorphous silicon (a-Si, we show that TLS can be eliminated in this system as the films become denser and more structurally ordered under certain deposition conditions. Our results demonstrate that TLS are not intrinsic to the glassy state but instead reside in low density regions of the amorphous network. This work obviates the role hydrogen was previously thought to play in removing TLS in a-Si:H and favors an ideal four-fold covalently bonded amorphous structure as the cause for the disappearance of TLS. Our result supports the notion that a-Si can be made a “perfect glass” with “crystal-like” properties, thus offering an encouraging opportunity to use it as a simple crystal dielectric alternative in applications, such as in modern quantum devices where TLS are the source of dissipation, decoherence and 1/f noise.

  8. Size modulation of nanocrystalline silicon embedded in amorphous silicon oxide by Cat-CVD

    International Nuclear Information System (INIS)

    Matsumoto, Y.; Godavarthi, S.; Ortega, M.; Sanchez, V.; Velumani, S.; Mallick, P.S.

    2011-01-01

    Different issues related to controlling size of nanocrystalline silicon (nc-Si) embedded in hydrogenated amorphous silicon oxide (a-SiO x :H) deposited by catalytic chemical vapor deposition (Cat-CVD) have been reported. Films were deposited using tantalum (Ta) and tungsten (W) filaments and it is observed that films deposited using tantalum filament resulted in good control on the properties. The parameters which can affect the size of nc-Si domains have been studied which include hydrogen flow rate, catalyst and substrate temperatures. The deposited samples are characterized by X-ray diffraction, HRTEM and micro-Raman spectroscopy, for determining the size of the deposited nc-Si. The crystallite formation starts for Ta-catalyst around the temperature of 1700 o C.

  9. Effect of surface irradiation during the photo-CVD deposition of a-Si:H thin films. Hikari CVD ho ni yoru amorphous silicon sakuseiji no kiban hikari reiki koka

    Energy Technology Data Exchange (ETDEWEB)

    Tasaka, K.; Doering, H.; Hashimoto, K.; Fujishima, A. (The University of Tokyo, Tokyo (Japan))

    1990-12-06

    This paper shows the impact of the irradiation from an additional light source during the deposition of hydrogenated amorphous silicon by photo-CVD deposition. Using a mercury sensitized photo-CVD process from Disilan (Si {sub 2} H {sub 6}) and hydrogen, silicon was deposited. A 40W low pressure mercury lamp was applied as the light source. A portion of the substrate was in addition irradiated using an Xg-He lamp through a thermal filter. Irradiation of the substrate using only Xg-He lamp produced no deposition, since this light has a wavelength which is too long to produce the SiH {sub 3}-radicals needed for Si deposition. The additional Xg-He light source was discovered to cause an increased thickness of deposited a-Si:H film and a transmission of the band structure. The reasons of these are considered that the influence of irradiation is not limited to film thickness, but that irradiation also impacts the composition of the a-Si:H film so as to cause a reduction in the hydrogen content. 10 figs., 1 tab.

  10. Microstructure and properties of ultrathin amorphous silicon nitride protective coating

    International Nuclear Information System (INIS)

    Yen, Bing K.; White, Richard L.; Waltman, Robert J.; Dai Qing; Miller, Dolores C.; Kellock, Andrew J.; Marchon, Bruno; Kasai, Paul H.; Toney, Michael F.; York, Brian R.; Deng Hong; Xiao Qifan; Raman, Vedantham

    2003-01-01

    The effect of N content on the structure and properties of rf reactively sputtered amorphous silicon nitride (a-SiN x ) has been studied by Rutherford backscattering spectrometry, x-ray reflectivity, ellipsometry, and nano-indentation. The N content in the film increased with the N 2 concentration in the sputtering gas until the Si 3 N 4 stoichiometry was reached. The hardness of a-SiN x increased with density, which in turn increased with the N content. The maximum hardness of 25 GPa and density of 3.2 g/cm 3 were attained at the stoichiometric Si 3 N 4 composition. With the application of a protective overcoat for magnetic disks in mind, thin a-SiN x films were deposited on CoPtCr media to examine their coverage, pinhole density, and wear resistance. According to x-ray photoelectron spectroscopy, the minimum thickness of a-SiN x required to protect the CoPtCr alloy from oxidation was 10 A, which was 10 A thinner than that of the reference amorphous nitrogenated carbon (a-CN x ). A statistic model showed this lower thickness required for a-SiN x can be attributed to its high density, which corresponds to 93% bulk density of Si 3 N 4 . Compared with 45 A a-CN x coated disks, 15 A a-SiN x coated disks had lower pinhole defect density and superior wear resistance

  11. Proton irradiation effects of amorphous silicon solar cell for solar power satellite

    Energy Technology Data Exchange (ETDEWEB)

    Morita, Yousuke; Oshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Sasaki, Susumu; Kuroda, Hideo; Ushirokawa, Akio

    1997-03-01

    Flexible amorphous silicon(fa-Si) solar cell module, a thin film type, is regarded as a realistic power generator for solar power satellite. The radiation resistance of fa-Si cells was investigated by the irradiations of 3,4 and 10 MeV protons. The hydrogen gas treatment of the irradiated fa-Si cells was also studied. The fa-Si cell shows high radiation resistance for proton irradiations, compared with a crystalline silicon solar cell. (author)

  12. Characterization of amorphous and nanocrystalline carbon films

    International Nuclear Information System (INIS)

    Chu, Paul K.; Li Liuhe

    2006-01-01

    Amorphous and nanocrystalline carbon films possess special chemical and physical properties such as high chemical inertness, diamond-like properties, and favorable tribological proprieties. The materials usually consist of graphite and diamond microstructures and thus possess properties that lie between the two. Amorphous and nanocrystalline carbon films can exist in different kinds of matrices and are usually doped with a large amount of hydrogen. Thus, carbon films can be classified as polymer-like, diamond-like, or graphite-like based on the main binding framework. In order to characterize the structure, either direct bonding characterization methods or the indirect bonding characterization methods are employed. Examples of techniques utilized to identify the chemical bonds and microstructure of amorphous and nanocrystalline carbon films include optical characterization methods such as Raman spectroscopy, Ultra-violet (UV) Raman spectroscopy, and infrared spectroscopy, electron spectroscopic and microscopic methods such as scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, transmission electron microscopy, and electron energy loss spectroscopy, surface morphology characterization techniques such as scanning probe microscopy (SPM) as well as other characterization methods such as X-ray reflectivity and nuclear magnetic resonance. In this review, the structures of various types of amorphous carbon films and common characterization techniques are described

  13. Amorphous silicon-based PINIP structure for color sensor

    International Nuclear Information System (INIS)

    Zhang, S.; Raniero, L.; Fortunato, E.; Ferreira, I.; Aguas, H.; Martins, R.

    2005-01-01

    A series of hydrogenated amorphous silicon carbide (a-SiC:H) films was prepared by plasma enhanced chemical vapor deposition (PECVD) technology. The microstructure and photoelectronic properties of the film are investigated by absorption spectra (in the ultraviolet to near-infrared range) and Fourier transform infrared (FTIR) spectra. The results show that good band gap controllability (1.83-3.64 eV) was achieved by adjusting the plasma parameters. In the energy range around 2.1 eV, the a-Si 1-x C x :H films exhibit good photosensitivity, opening the possibility to use this wide band gap material for device application, especially when blue color detectors are concerned. A multilayer device with a stack of glass/TCO(ZnO:Ga)/P(a-SiC:H)/I(a-SiC:H)/N(a-Si:H)/I(a-Si:H)/P(a-Si:H)/Al has been prepared. The devices can detect blue and red colors under different bias voltages. The optimization of the device, especially the film thickness and the band gap offset used to achieve better detectivity, is also done in this work

  14. Si-H bond dynamics in hydrogenated amorphous silicon

    Science.gov (United States)

    Scharff, R. Jason; McGrane, Shawn D.

    2007-08-01

    The ultrafast structural dynamics of the Si-H bond in the rigid solvent environment of an amorphous silicon thin film is investigated using two-dimensional infrared four-wave mixing techniques. The two-dimensional infrared (2DIR) vibrational correlation spectrum resolves the homogeneous line shapes ( 4ps waiting times. The Si-H stretching mode anharmonic shift is determined to be 84cm-1 and decreases slightly with vibrational frequency. The 1→2 linewidth increases with vibrational frequency. Frequency dependent vibrational population times measured by transient grating spectroscopy are also reported. The narrow homogeneous line shape, large inhomogeneous broadening, and lack of spectral diffusion reported here present the ideal backdrop for using a 2DIR probe following electronic pumping to measure the transient structural dynamics implicated in the Staebler-Wronski degradation [Appl. Phys. Lett. 31, 292 (1977)] in a-Si:H based solar cells.

  15. Structural morphology of amorphous conducting carbon film

    Indian Academy of Sciences (India)

    Amorphous conducting carbon films deposited over quartz substrates were analysed using X-ray diffraction and AFM technique. X-ray diffraction data reveal disorder and roughness in the plane of graphene sheet as compared to that of graphite. This roughness increases with decrease in preparation temperature. The AFM ...

  16. Ta-based amorphous metal thin films

    Energy Technology Data Exchange (ETDEWEB)

    McGlone, John M., E-mail: mcglone@eecs.oregonstate.edu [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331-5501 (United States); Olsen, Kristopher R. [Department of Chemistry, Oregon State University, Corvallis, OR 97331-4003 (United States); Stickle, William F.; Abbott, James E.; Pugliese, Roberto A.; Long, Greg S. [Hewlett-Packard Company, Corvallis, OR, 97333 (United States); Keszler, Douglas A. [Department of Chemistry, Oregon State University, Corvallis, OR 97331-4003 (United States); Wager, John F. [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331-5501 (United States)

    2015-11-25

    With their lack of grains and grain boundaries, amorphous metals are known to possess advantageous mechanical properties and enhanced chemical stability relative to crystalline metals. Commonly, however, they exhibit poor high-temperature stability because of their metastable nature. Here, we describe two new Ta-based ternary metal thin films that retain thermal stability to 600 °C and above. The new thin-film compositions, Ta{sub 2}Ni{sub 2}Si{sub 1} and Ta{sub 2}Mo{sub 2}Si{sub 1}, are amorphous, exhibiting ultra-smooth surfaces (<0.4 nm) and resistivities typical of amorphous metals (224 and 177 μΩ cm, respectively). - Highlights: • New Ta-based amorphous metals were sputter deposited from individual targets. • As-deposited amorphous structure was confirmed through diffraction techniques. • Electrical and surface properties were characterized and possess smooth surfaces. • No evidence of crystallization up to 600 °C (TaNiSi) and 800 °C (TaMoSi). • Ultra-smooth surfaces remained unchanged up to crystallization temperature.

  17. Formation of thin-film crystalline silicon on glass observed by in-situ XRD

    NARCIS (Netherlands)

    Westra, J.M.; Vavrunkova, V.; Sutta, P.; Van Swaaij, R.A.C.M.M.; Zeman, M.

    2010-01-01

    Thin-film poly-crystalline silicon (poly c-Si) on glass obtained by crystallization of an amorphous silicon (a-Si) film is a promising material for low cost, high efficiency solar cells. Our approach to obtain this material is to crystallize a-Si films on glass by solid phase crystallization (SPC).

  18. In situ probing of surface hydrides on hydrogenated amorphous silicon using attenuated total reflection infrared spectroscopy

    CERN Document Server

    Kessels, W M M; Sanden, M C M; Aydil, E S

    2002-01-01

    An in situ method based on attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) is presented for detecting surface silicon hydrides on plasma deposited hydrogenated amorphous silicon (a-Si:H) films and for determining their surface concentrations. Surface silicon hydrides are desorbed by exposing the a-Si:H films to low energy ions from a low density Ar plasma and by comparing the infrared spectrum before and after this low energy ion bombardment, the absorptions by surface hydrides can sensitively be separated from absorptions by bulk hydrides incorporated into the film. An experimental comparison with other methods that utilize isotope exchange of the surface hydrogen with deuterium showed good agreement and the advantages and disadvantages of the different methods are discussed. Furthermore, the determination of the composition of the surface hydrogen bondings on the basis of the literature data on hydrogenated crystalline silicon surfaces is presented, and quantification of the h...

  19. Nanostructured silicon carbon thin films grown by plasma enhanced chemical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Coscia, U. [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); CNISM Unita' di Napoli, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Ambrosone, G., E-mail: ambrosone@na.infn.it [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); SPIN-CNR, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Basa, D.K. [Department of Physics, Utkal University, Bhubaneswar 751004 (India); Rigato, V. [INFN Laboratori Nazionali Legnaro, 35020 Legnaro (Padova) (Italy); Ferrero, S.; Virga, A. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)

    2013-09-30

    Nanostructured silicon carbon thin films, composed of Si nanocrystallites embedded in hydrogenated amorphous silicon carbon matrix, have been prepared by varying rf power in ultra high vacuum plasma enhanced chemical vapour deposition system using silane and methane gas mixtures diluted in hydrogen. In this paper we have studied the compositional, structural and electrical properties of these films as a function of rf power. It is shown that with increasing rf power the atomic densities of carbon and hydrogen increase while the atomic density of silicon decreases, resulting in a reduction in the mass density. Further, it is demonstrated that carbon is incorporated into amorphous matrix and it is mainly bonded to silicon. The study has also revealed that the crystalline volume fraction decreases with increase in rf power and that the films deposited with low rf power have a size distribution of large and small crystallites while the films deposited with relatively high power have only small crystallites. Finally, the enhanced transport properties of the nanostructured silicon carbon films, as compared to amorphous counterpart, have been attributed to the presence of Si nanocrystallites. - Highlights: • The mass density of silicon carbon films decreases from 2.3 to 2 g/cm{sup 3}. • Carbon is incorporated in the amorphous phase and it is mainly bonded to silicon. • Nanostructured silicon carbon films are deposited at rf power > 40 W. • Si nanocrystallites in amorphous silicon carbon enhance the electrical properties.

  20. Crystallization and doping of amorphous silicon on low temperature plastic

    Science.gov (United States)

    Kaschmitter, James L.; Truher, Joel B.; Weiner, Kurt H.; Sigmon, Thomas W.

    1994-01-01

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900.degree. C.), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180.degree. C. for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180.degree. C.) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide.

  1. Light trapping effects in thin film silicon solar cells

    OpenAIRE

    Haug, FJ; Söderström, T; Dominé, D; Ballif, C

    2009-01-01

    We present advanced light trapping concepts for thin film silicon solar cells. When an amorphous and a microcrystalline absorber layers are combined into a micromorph tandem cell, light trapping becomes a challenge because it should combine the spectral region from 600 to 750 nm for the amorphous top cell and from 800 to 1100 for the microcrystalline bottom cell. Because light trapping is typically achieved by growing on textured substrates, the effect of interface textures on the material an...

  2. Digital radiography of the skeleton using a large-area detector based on amorphous silicon technology: Image quality and potential for dose reduction in comparison with screen-film radiography

    International Nuclear Information System (INIS)

    Volk, M.; Strotzer, M.; Holzkneckt, N.; Manke, C.; Lenhart, M.; Gmeinwieser, J.; Link, J.; Reiser, M.; Feuerback, S.

    2000-01-01

    AIM: The purpose of this study was to evaluate a large-area, flat-panel X-ray detector (FD), based on caesium-iodide (CsI) and amorphous silicon (a-Si) with respect to skeletal radiography. Conventional images were compared with digital radiographs using identical and reduced radiation doses. MATERIALS AND METHODS: Thirty consecutive patients were studied prospectively using conventional screen-film radiography (SFR; detector dose 2.5 μGy). Digital images were taken from the same patients with detector doses of 2.5, 1.25 and 0.625 μGy, respectively. The active-matrix detector had a panel size of 43 x 43 cm, a matrix of 3 x 3K, and a pixel size of 143 μm. All hard copies were presented in a random order to eight independent observers, who rated image quality according to subjective quality criteria. Results were assessed for significance using the Student's t -test (confidence level 95%). RESULTS: A statistically significant preference for digital over conventional images was revealed for all quality criteria, except for over-exposure (detector dose 2.5 μGy). Digital images with a 50% dose showed a small, statistically not significant, inferiority compared with SFR. The FD-technique was significantly inferior to SFR at 75% dose reduction regarding bone cortex and trabecula, contrast and overall impression. No statistically significant differences were found with regard to over- and under-exposure and soft tissue presentation. CONCLUSION: Amorphous silicon-based digital radiography yields good image quality. The potential for dose reduction depends on the clinical query. Volk, M. (2000)

  3. Facile fabrication of boron nitride nanosheets-amorphous carbon hybrid film for optoelectronic applications

    KAUST Repository

    Wan, Shanhong

    2015-01-01

    A novel boron nitride nanosheets (BNNSs)-amorphous carbon (a-C) hybrid film has been deposited successfully on silicon substrates by simultaneous electrochemical deposition, and showed a good integrity of this B-C-N composite film by the interfacial bonding. This synthesis can potentially provide the facile control of the B-C-N composite film for the potential optoelectronic devices. This journal is

  4. Amorphous microcellular polytetrafluoroethylene foam film

    Science.gov (United States)

    Tang, Chongzheng

    1991-11-01

    We report herein the preparation of novel low-density ultramicrocellular fluorocarbon foams and their application. These fluorocarbon foams are of interest for the biochemistry arena in numerous applications including foodstuff, pharmacy, wine making, beer brewery, fermentation medical laboratory, and other processing factories. All of those require good quality processing programs in which, after eliminating bacterium and virus, compressed air is needed. Ordinarily, compressed air contains bacterium and virus, its size is 0.01 - 2 micrometers fluorocarbon foam films. Having average porous diameter 0.04 - 0.1 micrometers , these are stable to high temperature (280 degree(s)C) and chemical environments, and generally have good engineering and mechanical properties (e.g., low coefficient of thermal expansion, high modulus, and good dimensional stability). Our new process for preparing low density fluorocarbon foams provides materials with unique properties. As such, they offer the possibility for being superior to earlier materials for a number of the filter applications mentioned.

  5. Self-consistent modeling of amorphous silicon devices

    International Nuclear Information System (INIS)

    Hack, M.

    1987-01-01

    The authors developed a computer model to describe the steady-state behaviour of a range of amorphous silicon devices. It is based on the complete set of transport equations and takes into account the important role played by the continuous distribution of localized states in the mobility gap of amorphous silicon. Using one set of parameters they have been able to self-consistently simulate the current-voltage characteristics of p-i-n (or n-i-p) solar cells under illumination, the dark behaviour of field-effect transistors, p-i-n diodes and n-i-n diodes in both the ohmic and space charge limited regimes. This model also describes the steady-state photoconductivity of amorphous silicon, in particular, its dependence on temperature, doping and illumination intensity

  6. GHz-rate optical parametric amplifier in hydrogenated amorphous silicon

    International Nuclear Information System (INIS)

    Wang, Ke-Yao; Foster, Amy C

    2015-01-01

    We demonstrate optical parametric amplification operating at GHz-rates at telecommunications wavelengths using a hydrogenated amorphous silicon waveguide through the nonlinear optical process of four-wave mixing. We investigate how the parametric amplification scales with repetition rate. The ability to achieve amplification at GHz-repetition rates shows hydrogenated amorphous silicon’s potential for telecommunication applications and a GHz-rate optical parametric oscillator. (paper)

  7. Transmissive metallic contact for amorphous silicon solar cells

    Science.gov (United States)

    Madan, A.

    1984-11-29

    A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

  8. Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Guy Beaucarne

    2007-01-01

    with plasma-enhanced chemical vapor deposition (PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

  9. Thermal decomposition of silane to form hydrogenated amorphous Si film

    Science.gov (United States)

    Strongin, Myron; Ghosh, Arup K.; Wiesmann, Harold J.; Rock, Edward B.; Lutz, III, Harry A.

    1980-01-01

    This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.

  10. Raman study of localized recrystallization of amorphous silicon induced by laser beam

    KAUST Repository

    Tabet, Nouar A.

    2012-06-01

    The adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter. © 2012 IEEE.

  11. Observation of correlation effects in the hopping transport in amorphous silicon

    International Nuclear Information System (INIS)

    Voegele, V.; Kalbitzer, S.; Boehringer, K.

    1985-01-01

    Amorphous silicon films have been modified by the implantation of Au or Si ions. The d.c. conductivity, measured between 300 and 15 K, was found to exhibit hopping exponents m which increase with decreasing temperature. Depending on the varied defect densities, m ranges between the limits of 1/4 and 1. These results can be explained by variable-range-hopping theory, if a Coulomb correlation term is included. (author)

  12. Effect of deposition and annealing conditions on the optical properties of amorphous silicon

    International Nuclear Information System (INIS)

    Mashin, A.I.; Ershov, A.V.; Khokhlov, D.A.

    1998-01-01

    The spectral characteristics of the refractive index and the extinction coefficient in the range 0.6-2.0 eV for amorphous silicon films prepared by electron-beam evaporation with variation of the substrate temperature, deposition rate, and annealing temperature in air are presented. The results obtained are discussed on the basis of the changes in the Penn gap energy as a function of the indicated preparation and treatment conditions

  13. Preparation and Characterisation of Amorphous-silicon Photovoltaic Devices Having Microcrystalline Emitters

    International Nuclear Information System (INIS)

    Gutierrez, M. T.; Gandia, J. J.; Carabe, J.

    1999-01-01

    The present work summarises the essential aspects of the research carried out so far at CIEMAT on amorphous-silicon solar cells. The experience accumulated on the preparation and characterisation of amorphous and microcrystalline silicon has allowed to start from intrinsic (absorbent) and p- and n-type (emitters) materials not only having excellent optoelectronic properties, but enjoying certain technological advantages with respect to those developed by other groups. Among these are absorbent-layer growth rates between 5 and 10 times as fast as conventional ones and microcrystalline emitters prepared without using hydrogen. The preparation of amorphous-silicon cells has required the solution of a number of problems, such as those related to pinholes, edge leak currents and diffusion of metals into the semiconductor. Once such constraints have been overcome, it has been demonstrated not only that the amorphous-silicon technology developed at CIEMAT is valid for making solar cells, but also that the quality of the semiconductor material is good for the application according to the partial results obtained. The development of thin-film laser-scribing technology is considered essential. Additionally it has been concluded that cross contamination, originated by the fact of using a single-chamber reactor, is the basic factor limiting the quality of the cells developed at CIEMAT. The present research activity is highly focused on the solution of this problem. (Author)23 refs

  14. A new concept of monolithic silicon pixel detectors Hydrogenated amorphous silicon on ASIC

    CERN Document Server

    Anelli, G; Despeisse, M; Dissertori, G; Jarron, P; Miazza, C; Moraes, D; Shah, A; Viertel, Gert M; Wyrsch, N

    2004-01-01

    A new concept of a monolithic pixel radiation detector is presented. It is based on the deposition of a film of hydrogenated amorphous silicon (a-Si:H) on an Application Specific Integrated Circuit (ASIC) . For almost 20 years, several research groups tried to demonstrate that a-Si:H material could be used to build radiation detectors for particle physics applications. A novel approach is made by the deposition of a-Si:H directly on the readout ASIC. This technique is similar to the concept of monolithic pixel detectors, but offers considerable advantages. We present first results from tests of a n- i-p a-Si:H diode array deposited on a glass substrate and on the a- Si:H above ASIC prototype detector.

  15. Comprehensive modeling of ion-implant amorphization in silicon

    International Nuclear Information System (INIS)

    Mok, K.R.C.; Jaraiz, M.; Martin-Bragado, I.; Rubio, J.E.; Castrillo, P.; Pinacho, R.; Srinivasan, M.P.; Benistant, F.

    2005-01-01

    A physically based model has been developed to simulate the ion-implant induced damage accumulation up to amorphization in silicon. Based on damage structures known as amorphous pockets (AP), which are three-dimensional, irregularly shaped agglomerates of interstitials (I) and vacancies (V) surrounded by crystalline silicon, the model is able to reproduce a wide range of experimental observations of damage accumulation and amorphization with interdependent implantation parameters. Instead of recrystallizing the I's and V's instantaneously, the recrystallization rate of an AP containing nI and mV is a function of its effective size, defined as min(n, m), irrespective of its internal spatial configuration. The parameters used in the model were calibrated using the experimental silicon amorphous-crystalline transition temperature as a function of dose rate for C, Si, and Ge. The model is able to show the superlinear damage build-up with dose, the extent of amorphous layer and the superadditivity effect of polyatomic ions

  16. Detection of charged particles in amorphous silicon layers

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Morel, J.; Kaplan, S.N.; Street, R.A.

    1986-02-01

    The successful development of radiation detectors made from amorphous silicon could offer the possibility for relatively easy construction of large area position-sensitive detectors. We have conducted a series of measurements with prototype detectors, on signals derived from alpha particles. The measurement results are compared with simple model calculations, and projections are made of potential applications in high-energy and nuclear physics

  17. Structure of hydrogenated amorphous silicon from ab initio molecular dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Buda, F. (Department of Physics, The Ohio State University, 174 West 18th Avenue, Columbus, Ohio (USA)); Chiarotti, G.L. (International School for Advanced Studies, Strada Costiera 11, I-34014 Trieste (Italy) Laboratorio Tecnologie Avanzate Superfici e Catalisi del Consorzio Interuniversitario Nazionale di Fisica della Materia, Padriciano 99, I-34012 Trieste (Italy)); Car, R. (International School for Advanced Studies, Strada Costiera 11, I-34014 Trieste (Italy) Institut Romard de Recherche Numerique en Physique des Materiaux, CH-1015 Lausanne, Switzerland Department of Condensed Matter Physics, University of Geneva, CH-1211 Geneva (Switzerland)); Parrinello, M. (IBM Research Division, Zurich Research Laboratory, CH-8803 Rueschlikon (Switzerland))

    1991-09-15

    We have generated a model of hydrogenated amorphous silicon by first-principles molecular dynamics. Our results are in good agreement with the available experimental data and provide new insight into the microscopic structure of this material. The calculation lends support to models in which monohydride complexes are prevalent, and indicates a strong tendency of hydrogen to form small clusters.

  18. Theory of structure and properties of hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Chiarotti, G.L.; Car, R. (International School of Advanced Studies, Trieste (Italy) Interuniversitario Nazionale di Fisica della Materia (INFM), Trieste (Italy). Lab. Tecnologie Avanzate Superfici e Catalisi); Buda, F. (International School of Advanced Studies, Trieste (Italy) Ohio State Univ., Columbus, OH (USA). Dept. of Physics); Parrinello, M. (International School of Advanced Studies, Trieste

    1990-01-01

    We have generated a computer model of hydrogenated amorphous silicon by first-principles molecular dynamics. Our results are in good agreement with the available experimental data, and provide new insight into the microscopic structure of this material. This should lead to a better understanding of the hydrogenation process. 13 refs., 2 figs.

  19. Defects study of hydrogenated amorphous silicon samples and their relation with the substrate and deposition conditions

    International Nuclear Information System (INIS)

    Darwich, R.

    2009-07-01

    The goal of this work is to study the properties of the defects aiming to explore the types of defects and the effect of various deposition parameters such as substrate temperature, the kind of the substrate, gas pressure and deposition rate. Two kinds of samples have been used; The first one was a series of Schottky diodes, and the second one a series of solar cells (p-i-n junction) deposited on crystalline silicon or on corning glass substrates with different deposition parameters. The deposition parameters were chosen to obtain materials whose their structures varying from amorphous to microcrystalline silicon including polymorphous silicon. Our results show that the polymorphous silicon samples deposited at high deposition rates present the best photovoltaic properties in comparison with those deposited at low rates. Also we found that the defects concentration in high deposition rate samples is less at least by two orders than that obtained in low deposition rate polymorphous, microcrystalline and amorphous samples. This study shows also that there is no effect of the substrate, or the thin films of highly doped amorphous silicon deposited on the substrate, on the creation and properties of these defects. Finally, different experimental methods have been used; a comparison between their results has been presented. (author)

  20. Radiation exposure in full-field digital mammography with a flat-panel X-ray detector based on amorphous silicon in comparison with conventional screen-film mammography

    International Nuclear Information System (INIS)

    Hermann, K.P.; Obenauer, S.; Grabbe, E.

    2000-01-01

    Comparison of radiation exposure between a digital amorphous silicon and a screen-film based mammography system. Evaluation of a possible potential of full-field digital mammography in order to decrease the radiation dose. Methods: The average glandular dose for phantom thicknesses from 30 to 60 mm was calculated from experimentally determined entrance surface air kerma for a digital and a conventional mammography system. The effect of reducing the detector dose and of changing the radiation quality on radiation exposure and on image quality were investigated. Results: By using the delivered settings of the automatic exposure control (AEC) devices, both mammographic systems needed nearly the same doses. Regulations and guidelines on radiation doses were complied. With the digital system, a reduction of radiation exposure of up to 40% by using a higher radiation quality and decreasing slightly the detector dose without loss of diagnostic image quality, might be possible. Conclusion: The potential of full-field digital mammography for radiation dose reduction, as shown in the present phantom study, needs however, a careful examination under clinical conditions. (orig.) [de

  1. Large-grain polycrystalline silicon film by sequential lateral solidification on a plastic substrate

    International Nuclear Information System (INIS)

    Kim, Yong-Hae; Chung, Choong-Heui; Yun, Sun Jin; Moon, Jaehyun; Park, Dong-Jin; Kim, Dae-Won; Lim, Jung Wook; Song, Yoon-Ho; Lee, Jin Ho

    2005-01-01

    A large-grain polycrystalline silicon film was obtained on a plastic substrate by sequential lateral solidification. With various combinations of sputtering powers and Ar working gas pressures, the conditions for producing dense amorphous silicon (a-Si) and SiO 2 films were optimized. The successful crystallization of the a-Si film is attributed to the production of a dense a-Si film that has low argon content and can endure high-intensity laser irradiation

  2. Properties of hydrogenated amorphous silicon (a-Si:H) deposited using a microwave Ecr plasma

    International Nuclear Information System (INIS)

    Mejia H, J.A.

    1996-01-01

    Hydrogenated amorphous silicon (a-Si:H) films have been widely applied to semiconductor devices, such as thin film transistors, solar cells and photosensitive devices. In this work, the first Si-H-Cl alloys (obtained at the National Institute for Nuclear Research of Mexico) were formed by a microwave electron cyclotron resonance (Ecr) plasma CVD method. Gaseous mixtures of silicon tetrachloride (Si Cl 4 ), hydrogen and argon were used. The Ecr plasma was generated by microwaves at 2.45 GHz and a magnetic field of 670 G was applied to maintain the discharge after resonance condition (occurring at 875 G). Si and Cl contents were analyzed by Rutherford Backscattering Spectrometry (RBS). It was found that, increasing proportion of Si Cl 4 in the mixture or decreasing pressure, the silicon and chlorine percentages decrease. Optical gaps were obtained by spectrophotometry. Decreasing temperature, optical gap values increase from 1.4 to 1.5 eV. (Author)

  3. Solution growth of microcrystalline silicon on amorphous substrates

    Energy Technology Data Exchange (ETDEWEB)

    Heimburger, Robert

    2010-07-05

    This work deals with low-temperature solution growth of micro-crystalline silicon on glass. The task is motivated by the application in low-cost solar cells. As glass is an amorphous material, conventional epitaxy is not applicable. Therefore, growth is conducted in a two-step process. The first step aims at the spatial arrangement of silicon seed crystals on conductive coated glass substrates, which is realized by means of vapor-liquid-solid processing using indium as the solvent. Seed crystals are afterwards enlarged by applying a specially developed steady-state solution growth apparatus. This laboratory prototype mainly consists of a vertical stack of a silicon feeding source and the solvent (indium). The growth substrate can be dipped into the solution from the top. The system can be heated to a temperature below the softening point of the utilized glass substrate. A temperature gradient between feeding source and growth substrate promotes both, supersaturation and material transport by solvent convection. This setup offers advantages over conventional liquid phase epitaxy at low temperatures in terms of achievable layer thickness and required growth times. The need for convective solute transport to gain the desired thickness of at least 50 {mu}m is emphasized by equilibrium calculations in the binary system indium-silicon. Material transport and supersaturation conditions inside the utilized solution growth crucible are analyzed. It results that the solute can be transported from the lower feeding source to the growth substrate by applying an appropriate heating regime. These findings are interpreted by means of a hydrodynamic analysis of fluid flow and supporting FEM simulation. To ensure thermodynamic stability of all materials involved during steady-state solution growth, the ternary phase equilibrium between molybdenum, indium and silicon at 600 C was considered. Based on the obtained results, the use of molybdenum disilicide as conductive coating

  4. Room-temperature crystallization of amorphous films by RF plasma treatment

    International Nuclear Information System (INIS)

    Ohsaki, H.; Shibayama, Y.; Yoshida, N.; Watanabe, T.; Kanemaru, S.

    2009-01-01

    The crystallization of amorphous thin films was achieved by 13.56 MHz RF (radio frequency) plasma treatment. This crystallization process has a strong advantage that the sample temperature is lower than 120 o C during the plasma treatment even without compulsory cooling and various amorphous films are crystallized after 2 min or so. This treatment works on amorphous films of various materials, independently of the film preparation method and substrate materials. Crystallization has been confirmed on amorphous thin films of sputtered ITO (tin doped indium oxide) deposited on soda-lime glass and PET (polyethylene terephthalate), of sputtered TiO 2 on soda-lime glass, of sol-gel derived TiO 2 on silicon wafer and of sputtered hydrogen-doped silicon on soda-lime glass. The plasma gas pressure was found to be the key parameter in the plasma crystallization process. The appropriate gas pressure depends on the plasma gas species and not on film or substrate materials. A Cu electrode, attached to the backside of the substrate and is electrically floated from the electric ground, was found to enhance the plasma crystallization performance

  5. Studying the noise parameters of thin-film silicon resistors

    International Nuclear Information System (INIS)

    Belogurov, S.V.; Gostilo, V.V.; Yurov, A.S.

    1986-01-01

    The results of studies on spectral density and energy noise equivalent of thin-film resistors on the base of amorphous silicon and KIM and KVM commercial high-ohmic resistors are presented. Dependence of the active part of impedance on frequency is shown to be the main source of redundant noise in resistors. Dependence of spectral density of noise voltage of current noises of silicon resistors on applied voltage is described by the formula S T =B V 2 /f 1.6 with the values B=(1.4-1.7)x10 -12 Hz 0.6 . As to noise parameters the silicon resistor is superior to commercial resistors

  6. Thin metal layer as transparent electrode in n-i-p amorphous silicon solar cells

    Directory of Open Access Journals (Sweden)

    Theuring Martin

    2014-07-01

    Full Text Available In this paper, transparent electrodes, based on a thin silver film and a capping layer, are investigated. Low deposition temperature, flexibility and low material costs are the advantages of this type of electrode. Their applicability in structured n-i-p amorphous silicon solar cells is demonstrated in simulation and experiment. The influence of the individual layer thicknesses on the solar cell performance is discussed and approaches for further improvements are given. For the silver film/capping layer electrode, a higher solar cell efficiency could be achieved compared to a reference ZnO:Al front contact.

  7. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  8. Amorphous silicon carbide ultramicroelectrode arrays for neural stimulation and recording

    Science.gov (United States)

    Deku, Felix; Cohen, Yarden; Joshi-Imre, Alexandra; Kanneganti, Aswini; Gardner, Timothy J.; Cogan, Stuart F.

    2018-02-01

    Objective. Foreign body response to indwelling cortical microelectrodes limits the reliability of neural stimulation and recording, particularly for extended chronic applications in behaving animals. The extent to which this response compromises the chronic stability of neural devices depends on many factors including the materials used in the electrode construction, the size, and geometry of the indwelling structure. Here, we report on the development of microelectrode arrays (MEAs) based on amorphous silicon carbide (a-SiC). Approach. This technology utilizes a-SiC for its chronic stability and employs semiconductor manufacturing processes to create MEAs with small shank dimensions. The a-SiC films were deposited by plasma enhanced chemical vapor deposition and patterned by thin-film photolithographic techniques. To improve stimulation and recording capabilities with small contact areas, we investigated low impedance coatings on the electrode sites. The assembled devices were characterized in phosphate buffered saline for their electrochemical properties. Main results. MEAs utilizing a-SiC as both the primary structural element and encapsulation were fabricated successfully. These a-SiC MEAs had 16 penetrating shanks. Each shank has a cross-sectional area less than 60 µm2 and electrode sites with a geometric surface area varying from 20 to 200 µm2. Electrode coatings of TiN and SIROF reduced 1 kHz electrode impedance to less than 100 kΩ from ~2.8 MΩ for 100 µm2 Au electrode sites and increased the charge injection capacities to values greater than 3 mC cm-2. Finally, we demonstrated functionality by recording neural activity from basal ganglia nucleus of Zebra Finches and motor cortex of rat. Significance. The a-SiC MEAs provide a significant advancement in the development of microelectrodes that over the years has relied on silicon platforms for device manufacture. These flexible a-SiC MEAs have the potential for decreased tissue damage and reduced

  9. Ion-beam doping of amorphous silicon with germanium isovalent impurity

    International Nuclear Information System (INIS)

    Khokhlov, A.F.; Mashin, A.I.; Ershov, A.V.; Mashin, N.I.; Ignat'eva, E.A.

    1988-01-01

    Experimental data on ion-beam doping of amorphous silicon containing minor germanium additions by donor and acceptor impurity are presented. Doping of a-Si:Ge films as well as of a-Si layers was performed by implantation of 40 keV energy B + ions or 120 keV energy phosphorus by doses from 3.2x10 13 up to 1.3x10 17 cm -2 . Ion current density did not exceed 1 μA/cm 2 . Radiation defect annealing was performed at 400 deg C temperature during 30 min. Temperature dependences of conductivity in the region of 160-500 K were studied. It is shown that a-Si:Ge is like hydrogenized amorphous silicon in relation to doping

  10. Method for producing silicon thin-film transistors with enhanced forward current drive

    Science.gov (United States)

    Weiner, Kurt H.

    1998-01-01

    A method for fabricating amorphous silicon thin film transistors (TFTs) with a polycrystalline silicon surface channel region for enhanced forward current drive. The method is particularly adapted for producing top-gate silicon TFTs which have the advantages of both amorphous and polycrystalline silicon TFTs, but without problem of leakage current of polycrystalline silicon TFTs. This is accomplished by selectively crystallizing a selected region of the amorphous silicon, using a pulsed excimer laser, to create a thin polycrystalline silicon layer at the silicon/gate-insulator surface. The thus created polysilicon layer has an increased mobility compared to the amorphous silicon during forward device operation so that increased drive currents are achieved. In reverse operation the polysilicon layer is relatively thin compared to the amorphous silicon, so that the transistor exhibits the low leakage currents inherent to amorphous silicon. A device made by this method can be used, for example, as a pixel switch in an active-matrix liquid crystal display to improve display refresh rates.

  11. Electron-trapping-triggered anneal of defect states in silicon-rich hydrogenated amorphous silicon nitride

    International Nuclear Information System (INIS)

    Oversluizen, G.; Lodders, W.H.; Johnson, M.T.; van der Put, A.A.

    1997-01-01

    The dc-current stress behavior of Mo/a-SiN x H y /Mo thin-film diodes is discussed for several a-SiN x H y -plasma-deposition conditions. Current transport is governed by thermionic field emission of electrons over a reverse biased Schottky barrier. The barrier height is determined by the a-SiN x H y -plasma-deposition conditions. Therefore these back-to-back Schottky devices provide an elegant way to perform dc-current stressing at several well defined carrier densities for similar stress fields. It is shown that such experiments allow assessment of defect-state creation/anneal mechanisms in a-SiN x H y . An electron-trapping-triggered anneal mechanism accounts for the observed dependence of the defect density at the electrode injecting contact (cathode) on the hole-barrier height at the anode. Also a new microscopically detailed anneal reaction scheme is proposed. The defect-state creation/anneal mechanism is expected to be generally applicable for all silicon-rich hydrogenated amorphous silicon alloys. copyright 1997 American Institute of Physics

  12. The relation between the properties of hydrogenenated and nytrogenated amorphous silicon thin films and the chemical composition of the work atmosphere

    International Nuclear Information System (INIS)

    Vilche, A.; Brenzikofer, R.

    1984-01-01

    Four sets of five films of a-Si:H:N were developed on glass using the RF glow discharge procedure in a sylane and nitrogen (N 2 ) atmosphere with several concentrations. The samples were analysed through optical transmission for the determination of the thickness, refraction index, optical gap using a program inserted in a VAX-II system. The films were characterized by electrical conductivity measurement as function of temperature with the aim of determining the activation energy. (Author) [pt

  13. Megavoltage imaging with a large-area, flat-panel, amorphous silicon imager

    International Nuclear Information System (INIS)

    Antonuk, Larry E.; Yorkston, John; Huang Weidong; Sandler, Howard; Siewerdsen, Jeffrey H.; El-Mohri, Youcef

    1996-01-01

    Purpose: The creation of the first large-area, amorphous silicon megavoltage imager is reported. The imager is an engineering prototype built to serve as a stepping stone toward the creation of a future clinical prototype. The engineering prototype is described and various images demonstrating its properties are shown including the first reported patient image acquired with such an amorphous silicon imaging device. Specific limitations in the engineering prototype are reviewed and potential advantages of future, more optimized imagers of this type are presented. Methods and Materials: The imager is based on a two-dimensional, pixelated array containing amorphous silicon field-effect transistors and photodiode sensors which are deposited on a thin glass substrate. The array has a 512 x 560-pixel format and a pixel pitch of 450 μm giving an imaging area of ∼23 x 25 cm 2 . The array is used in conjunction with an overlying metal plate/phosphor screen converter as well as an electronic acquisition system. Images were acquired fluoroscopically using a megavoltage treatment machine. Results: Array and digitized film images of a variety of anthropomorphic phantoms and of a human subject are presented and compared. The information content of the array images generally appears to be at least as great as that of the digitized film images. Conclusion: Despite a variety of severe limitations in the engineering prototype, including many array defects, a relatively slow and noisy acquisition system, and the lack of a means to generate images in a radiographic manner, the prototype nevertheless generated clinically useful information. The general properties of these amorphous silicon arrays, along with the quality of the images provided by the engineering prototype, strongly suggest that such arrays could eventually form the basis of a new imaging technology for radiotherapy localization and verification. The development of a clinically useful prototype offering high

  14. Structural morphology of amorphous conducting carbon film

    Indian Academy of Sciences (India)

    Unknown

    been found to be having a lot of technological applica- tions. The properties of these amorphous carbons sensi- tively depend on the relative concentration of sp3 and sp2 hybridized carbons. The resulting amorphous materials are variously referred to as tetrahedral amorphous carbon. (ta-C), amorphous carbon (a-C), ...

  15. Charge ordering in amorphous WOx films

    International Nuclear Information System (INIS)

    Kopelevich, Yakov; Silva, Robson R. da; Rougier, Aline; Luk'yanchuk, Igor A.

    2008-01-01

    We observed highly anisotropic viscous electronic conducting phase in amorphous WO 1.55 films that occurs below a current (I)- and frequency (f)-dependent temperature T*(I, f). At T< T*(I, f) the rotational symmetry of randomly disordered electronic background is broken leading to the appearance of mutually perpendicular metallic- and insulating-like states. A rich dynamic behavior of the electronic matter occurring at T< T*(I, f) provides evidence for an interplay between pinning effects and electron-electron interactions. The results suggest a dynamic crystallization of the disordered electronic matter, viz. formation of sliding Wigner crystal, as well as the occurrence of quantum liquid-like crystal or stripe phase at low drives

  16. The atomic and electronic structure of amorphous silicon nitride

    CERN Document Server

    Alvarez, F

    2002-01-01

    Using a novel approach to the ab initio generation of random networks we constructed two nearly stoichiometric samples of amorphous silicon nitride with the same content x= 1.29. The two 64-atom periodically-continued cubic diamond-like cells contain 28 silicons and 36 nitrogens randomly substituted, and were amorphized with a 6 f s time step by heating them to just below their melting temperature with a Harris-functional based, molecular dynamics code in the LDA approximation. The averaged total radial distribution function (RDF) obtained is compared with some existing Tersoff-like potential simulations and with experiment; ours agree with experiment. All the partial radial features are calculated and the composition of the second peak also agrees with experiment. The electronic structure is calculated and the optical gaps obtained using both a HOMO-LUMO approach and the Tauc-like procedure developed recently that gives reasonable gaps. (Author)

  17. Photo stability Assessment in Amorphous-Silicon Solar Cells

    International Nuclear Information System (INIS)

    Gandia, J. J.; Carabe, J.; Fabero, F.; Jimenez, R.; Rivero, J. M.

    1999-01-01

    The present status of amorphous-silicon-solar-cell research and development at CIEMAT requires the possibility to characterise the devices prepared from the point of view of their stability against sunlight exposure. Therefore a set of tools providing such a capacity has been developed. Together with an introduction to photovoltaic applications of amorphous silicon and to the photodegradation problem, the present work describes the process of setting up these tools. An indoor controlled photodegradation facility has been designed and built, and a procedure has been developed for the measurement of J-V characterisation in well established conditions. This method is suitable for all kinds of solar cells, even for those for which no model is still available. The photodegradation and characterisation of some cells has allowed to validate both the new testing facility and method. (Author) 14 refs

  18. First-Principles Prediction of Densities of Amorphous Materials: The Case of Amorphous Silicon

    Science.gov (United States)

    Furukawa, Yoritaka; Matsushita, Yu-ichiro

    2018-02-01

    A novel approach to predict the atomic densities of amorphous materials is explored on the basis of Car-Parrinello molecular dynamics (CPMD) in density functional theory. Despite the determination of the atomic density of matter being crucial in understanding its physical properties, no first-principles method has ever been proposed for amorphous materials until now. We have extended the conventional method for crystalline materials in a natural manner and pointed out the importance of the canonical ensemble of the total energy in the determination of the atomic densities of amorphous materials. To take into account the canonical distribution of the total energy, we generate multiple amorphous structures with several different volumes by CPMD simulations and average the total energies at each volume. The density is then determined as the one that minimizes the averaged total energy. In this study, this approach is implemented for amorphous silicon (a-Si) to demonstrate its validity, and we have determined the density of a-Si to be 4.1% lower and its bulk modulus to be 28 GPa smaller than those of the crystal, which are in good agreement with experiments. We have also confirmed that generating samples through classical molecular dynamics simulations produces a comparable result. The findings suggest that the presented method is applicable to other amorphous systems, including those for which experimental knowledge is lacking.

  19. Research and development of photovoltaic power system. Interface studies of amorphous silicon; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon kaimen no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Konagai, M. [Tokyo Institute of Technology, Tokyo (Japan). Faculty of Engineering

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on interface of amorphous silicon for solar cells. In research on amorphous solar cells using ZnO for transparent electrically conductive films, considerations were given on a growth mechanism of a ZnO film using the MOCVD process. It was made clear that the ZnO film grows with Zn(OH)2 working as a film forming species. It was also shown that the larger the ZnO particle size is, the more the solar cell efficiency is improved. Furthermore, theoretical elucidation was made on effects of rear face of an interface on cell characteristics, and experimental discussions were given subsequently. In research on solar cells using hydrogen diluted `i` layers, delta-doped solar cells were fabricated based on basic data obtained in the previous fiscal year, and the hydrogen dilution effect was evaluated from the cell characteristics. When the hydrogen dilution ratio is increased from zero to one, the conversion efficiency has improved from 12.2% to 12.6%. In addition, experiments and discussions were given on solar cells fabricated by using SiH2Cl2. 9 figs.

  20. Computational Evaluation of Amorphous Carbon Coating for Durable Silicon Anodes for Lithium-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Jeongwoon Hwang

    2015-10-01

    Full Text Available We investigate the structural, mechanical, and electronic properties of graphite-like amorphous carbon coating on bulky silicon to examine whether it can improve the durability of the silicon anodes of lithium-ion batteries using molecular dynamics simulations and ab-initio electronic structure calculations. Structural models of carbon coating are constructed using molecular dynamics simulations of atomic carbon deposition with low incident energies (1–16 eV. As the incident energy decreases, the ratio of sp2 carbons increases, that of sp3 decreases, and the carbon films become more porous. The films prepared with very low incident energy contain lithium-ion conducting channels. Also, those films are electrically conductive to supplement the poor conductivity of silicon and can restore their structure after large deformation to accommodate the volume change during the operations. As a result of this study, we suggest that graphite-like porous carbon coating on silicon will extend the lifetime of the silicon anodes of lithium-ion batteries.

  1. Electron trapping in amorphous silicon: A quantum molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Lin H.; Kalia, R.K.; Vashishta, P.

    1990-12-01

    Quantum molecular dynamics (QMD) simulations provide the real-time dynamics of electrons and ions through numerical solutions of the time-dependent Schrodinger and Newton equations, respectively. Using the QMD approach we have investigated the localization behavior of an excess electron in amorphous silicon at finite temperatures. For time scales on the order of a few picoseconds, we find the excess electron is localized inside a void of radius {approximately}3 {Angstrom} at finite temperatures. 12 refs.

  2. Selfsupported epitaxial silicon films

    International Nuclear Information System (INIS)

    Lazarovici, D.; Popescu, A.

    1975-01-01

    The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

  3. Thin-film silicon for flexible metal-air batteries.

    Science.gov (United States)

    Garamoun, Ahmed; Schubert, Markus B; Werner, Jürgen H

    2014-12-01

    Due to its high energy density, theoretical studies propose silicon as a promising candidate material for metal-air batteries. Herein, for the first time, experimental results detail the use of n-type doped amorphous silicon and silicon carbide as fuel in Si-air batteries. Thin-film silicon is particularly interesting for flexible and rolled batteries with high specific energies. Our Si-air batteries exhibit a specific capacity of 269 Ah kg(-1) and an average cell voltage of 0.85 V at a discharge current density of 7.9 μA cm(-2) , corresponding to a specific energy of 229 Wh kg(-1) . Favorably in terms of safety, low concentrated alkaline solution serves as electrolyte. Discharging of the Si-air cells continues as long as there is silicon available for oxidation. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Thin-film amorphous silicon alloy research partnership. Phase 2, Annual technical progress report, 2 February 1996--1 February 1997

    Energy Technology Data Exchange (ETDEWEB)

    Guha, S [United Solar Systems Corp., Troy, MI (United States)

    1997-06-01

    This is Phase II of a 3-phase, 3-year program. It is intended to expand, enhance, and accelerate knowledge and capabilities for developing high-performance, two-terminal multijunction amorphous Si alloy modules. We discuss investigations on back reflectors to improve cell performance and investigate uniformity in performance over a 1-sq.-ft. area. We present results on component cell performance, both in the initial and in the light-degraded states, deposited over a 1-sq.-ft. area. The uniformity in deposited is investigated by studying the performance of subcells deposited over the entire area. We also present results on the performance of triple- junction cells and modules. The modules use grid-lines and encapsulants compatible with our production technology. We discuss the novel laser-processing technique that has bee developed at United Solar to improve energy-conversion efficiency and reduce manufacturing costs. We discuss in detail the optimization of the processing steps, and the performance of a laser-processed, triple- junction device of 12.6 cm{sup 2} area is presented. We also present experimental results on investigations of module reliability.

  5. Control of single-electron charging of metallic nanoparticles onto amorphous silicon surface.

    Science.gov (United States)

    Weis, Martin; Gmucová, Katarína; Nádazdy, Vojtech; Capek, Ignác; Satka, Alexander; Kopáni, Martin; Cirák, Július; Majková, Eva

    2008-11-01

    Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film is reported. Single-electron charging (so-called quantized double-layer charging) of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the electric field in the surface region induced by the excess of negative/positive charged defect states in the amorphous silicon layer. The particular charge states in amorphous silicon are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. The influence of charged states on the electric field in the surface region is evaluated by the finite element method. The single-electron charging is analyzed by the standard quantized double layer model as well as two weak-link junctions model. Both approaches are in accordance with experiment and confirm single-electron charging by tunnelling process at room temperature. This experiment illustrates the possibility of the creation of a voltage-controlled capacitor for nanotechnology.

  6. Thin-film silicon detectors for particle detection

    OpenAIRE

    Wyrsch, Nicolas; Dunand, S.; Miazza, C.; Shah, A.; Anelli, G.; Despeisse, M.; Garrigos, A.; Jarron, P.; Kaplon. J.; Moraes, D.; Commichau, S. C.; Dissertori, G.; Viertel, G. M.

    2008-01-01

    Integrated particle sensors have been developed using thin-film on ASIC technology. For this purpose, hydrogenated amorphous silicon diodes, in various configurations, have been optimized for particle detection. These devices were first deposited on glass substrates to optimize the material properties and the dark current of very thick diodes (with thickness up to 50 μm). Corresponding diodes were later directly deposited on CMOS readout chips. These integrated particle sensors have been char...

  7. Efficient amorphous silicon solar cells: characterization, optimization, and optical loss analysis

    Directory of Open Access Journals (Sweden)

    Wayesh Qarony

    Full Text Available Hydrogenated amorphous silicon (a-Si:H has been effectively utilized as photoactive and doped layers for quite a while in thin-film solar applications but its energy conversion efficiency is limited due to thinner absorbing layer and light degradation issue. To overcome such confinements, it is expected to adjust better comprehension of device structure, material properties, and qualities since a little enhancement in the photocurrent significantly impacts on the conversion efficiency. Herein, some numerical simulations were performed to characterize and optimize different configuration of amorphous silicon-based thin-film solar cells. For the optical simulation, two-dimensional finite-difference time-domain (FDTD technique was used to analyze the superstrate (p-i-n planar amorphous silicon solar cells. Besides, the front transparent contact layer was also inquired by using SnO2:F and ZnO:Al materials to improve the photon absorption in the photoactive layer. The cell was studied for open-circuit voltage, external quantum efficiency, and short-circuit current density, which are building blocks for solar cell conversion efficiency. The optical simulations permit investigating optical losses at the individual layers. The enhancement in both short-circuit current density and open-circuit voltage prompts accomplishing more prominent power conversion efficiency. A maximum short-circuit current density of 15.32 mA/cm2 and an energy conversion efficiency of 11.3% were obtained for the optically optimized cell which is the best in class amorphous solar cell. Keywords: Superstrate p-i-n, Power loss, Quantum efficiency, Short circuit current, FDTD

  8. Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-10-20

    To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

  9. Silicon-based thin-film transistors with a high stability

    NARCIS (Netherlands)

    Stannowski, Bernd

    2002-01-01

    Thin-Film Transistors (TFTs) are widely applied as pixel-addressing devices in large-area electronics, such as active-matrix liquid-crystal displays (AMLCDs) or sensor arrays. Hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiNx:H) are generally used as the semiconductor and the

  10. Water vapor selective thin film nanocomposite membranes prepared by functionalized Silicon nanoparticles

    NARCIS (Netherlands)

    Baig, Muhammad Irshad; Ingole, Pravin G.; Jeon, Jae deok; Hong, Seong Uk; Choi, Won Kil; Jang, Boyun; Lee, Hyung Keun

    2017-01-01

    In this work, we have reported a facile method to improve the water vapor permeation performance of thin film nanocomposite membranes by tailoring the surface properties of Silicon nanoparticles. Inductively coupled plasma technique was utilized to synthesize amorphous Silicon nanoparticles (~. 10.

  11. Stretched exponential relaxation processes in hydrogenated amorphous and polymorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Morigaki, Kazuo [Department of Electrical and Digital-System Engineering, Hiroshima Institute of Technology, Miyake, Saeki-ku, Hiroshima 731-5193 (Japan); Hikita, Harumi [Physics Laboratory, Meikai University, Urayasu, Chiba 279-8550 (Japan)

    2011-09-15

    Stretched exponential relaxation has been observed in various phenomena of hydrogenated amorphous silicon (a-Si:H) and hydrogenated polymorphous silicon (pm-Si:H). As an example, we take light-induced defect creation in a-Si:H and pm-Si:H, in which defect-creation process and defect-annihilation process via hydrogen movement play important roles. We have performed the Monte Carlo simulation for hydrogen movement. Hydrogen movement exhibits anomalous diffusion. In our model of light-induced defect creation in a-Si:H, a pair of two types of dangling bonds, i.e., a normal dangling bond and a hydrogen-related dangling bond, that is a dangling bond having hydrogen in the nearby site, are created under illumination, and hydrogen dissociated from the hydrogen-related dangling bond terminates a normal dangling bond via hydrogen movement. The amorphous network reflects on the dispersive parameter of the stretched exponential function in the light-induced defect creation. We discuss this issue, taking into account the difference in the amorphous network between a-Si:H and pm-Si:H (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Polycystalline silicon thin films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, Christian Claus

    2012-01-15

    For the thin polycrystalline Si films fabricated with the aluminium-induced-layer-exchange (ALILE) process a good structural quality up to a layer-thickness value of 10 nm was determined. For 5 nm thick layers however after the layer exchange no closes poly-silicon film was present. In this case the substrate was covered with spherically arranged semiconductor material. Furthermore amorphous contributions in the layer could be determined. The electrical characterization of the samples at room temperature proved a high hole concentration in the range 10{sup 18} cm{sup -3} up to 9.10{sup 19} cm{sup -3}, which is influenced by the process temperature and the layer thickness. Hereby higher hole concentrations at higher process temperatures and thinner films were observed. Furthermore above 150-200 K a thermically activated behaviour of the electrical conductivity was observed. At lower temperatures a deviation of the measured characteristic from the exponential Arrhenius behaviour was determined. For low temperatures (below 20 K) the conductivity follows the behaviour {sigma}{proportional_to}[-(T{sub 0}/T){sup 1/4}]. The hole mobility in the layers was lowered by a passivation step, which can be explained by defect states at the grain boundaries. The for these very thin layers present situation was simulated in the framework of the model of Seto, whereby both the defect states at the grain boundaries (with an area density Q{sub t}) and the defect states at the interfaces (with an area density Q{sub it}) were regarded. By this the values Q{sub t}{approx}(3-4).10{sup 12} cm{sup -2} and Q{sub it}{approx}(2-5).10{sup 12} cm{sup -2} could be determined for these thin ALILE layers on quartz substrates. Additionally th R-ALILE process was studied, which uses the reverse precursor-layer sequence substrate/amorphous silicon/oxide/aluminium. Hereby two steps in the crystallization process of the R-ALILE process were found. First a substrate/Al-Si mixture/poly-Si layer structure

  13. Effects of excitation intensity on the photocurrent response of thin film silicon solar modules

    Science.gov (United States)

    Kim, Q.; Shumka, A.; Trask, J.

    1986-01-01

    Photocurrent responses of amorphous thin film silicon solar modules at room temperature were studied at different excitation intensities using various monochromatic light sources. Photocurrent imaging techniques have been effectively used to locate rapidly, and non-destructively, failure and defect sites in the multilayer thin film device. Differences observed in the photocurrent response characteristics for two different cells in the same amorphous thin film silicon solar module suggest the possibility of the formation of dissimilarly active devices, even though the module is processed in the same fabrication process. Possible mechanisms are discussed.

  14. The physics and technological aspects of the transition from amorphous to microcrystalline and polycrystalline silicon

    Czech Academy of Sciences Publication Activity Database

    Kočka, Jan; Fejfar, Antonín; Mates, Tomáš; Fojtík, Petr; Dohnalová, Kateřina; Luterová, Kateřina; Stuchlík, Jiří; Stuchlíková, The-Ha; Pelant, Ivan; Rezek, Bohuslav; Stemmer, A.; Ito, M.

    2004-01-01

    Roč. 1, č. 5 (2004), s. 1097-1114 ISSN 1610-1634 R&D Projects: GA AV ČR IAA1010316; GA AV ČR IAB2949101; GA MŽP SM/300/1/03; GA ČR GA202/03/0789 Institutional research plan: CEZ:AV0Z1010914 Keywords : silicon thin films * amorphous/microcrystalline boundary * AFM microscopic study * model of transport * metal-induced crystallization Subject RIV: BM - Solid Matter Physics ; Magnetism

  15. Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure.

    Science.gov (United States)

    Munde, M S; Mehonic, A; Ng, W H; Buckwell, M; Montesi, L; Bosman, M; Shluger, A L; Kenyon, A J

    2017-08-24

    We studied intrinsic resistance switching behaviour in sputter-deposited amorphous silicon suboxide (a-SiO x ) films with varying degrees of roughness at the oxide-electrode interface. By combining electrical probing measurements, atomic force microscopy (AFM), and scanning transmission electron microscopy (STEM), we observe that devices with rougher oxide-electrode interfaces exhibit lower electroforming voltages and more reliable switching behaviour. We show that rougher interfaces are consistent with enhanced columnar microstructure in the oxide layer. Our results suggest that columnar microstructure in the oxide will be a key factor to consider for the optimization of future SiOx-based resistance random access memory.

  16. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

    Science.gov (United States)

    Madan, A.

    1984-12-10

    A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

  17. Grain boundary resistance to amorphization of nanocrystalline silicon carbide

    Science.gov (United States)

    Chen, Dong; Gao, Fei; Liu, Bo

    2015-01-01

    Under the C displacement condition, we have used molecular dynamics simulation to examine the effects of grain boundaries (GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation. The results show that the interstitials are preferentially absorbed and accumulated at GBs that provide the sinks for defect annihilation at low doses, but also driving force to initiate amorphization in the nc-SiC at higher doses. The majority of surviving defects are C interstitials, as either C-Si or C-C dumbbells. The concentration of defect clusters increases with increasing dose, and their distributions are mainly observed along the GBs. Especially these small clusters can subsequently coalesce and form amorphous domains at the GBs during the accumulation of carbon defects. A comparison between displacement amorphized nc-SiC and melt-quenched single crystal SiC shows the similar topological features. At a dose of 0.55 displacements per atom (dpa), the pair correlation function lacks long range order, demonstrating that the nc-SiC is fully amorphilized. PMID:26558694

  18. Implantation of xenon in amorphous carbon and silicon for brachytherapy application

    International Nuclear Information System (INIS)

    Marques, F.C.; Barbieri, P.F.; Viana, G.A.; Silva, D.S. da

    2013-01-01

    We report a procedure to implant high dose of xenon atoms (Xe) in amorphous carbon, a-C, and amorphous silicon, a-Si, for application in brachytherapy seeds. An ion beam assisted deposition (IBAD) system was used for the deposition of the films, where one ion gun was used for sputtering a carbon (or silicon) target, while the other ion gun was used to simultaneously bombard the growing film with a beam of xenon ion Xe + in the 0–300 eV range. Xe atoms were implanted into the film with concentration up to 5.5 at.%, obtained with Xe bombardment energy in the 50–150 eV range. X-ray absorption spectroscopy was used to investigate the local arrangement of the implanted Xe atoms through the Xe L III absorption edge (4.75 keV). It was observed that Xe atoms tend to agglomerate in nanoclusters in a-C and are dispersed in a-Si.

  19. Structural properties of amorphous silicon produced by electron irradiation

    International Nuclear Information System (INIS)

    Yamasaki, J.; Takeda, S.

    1999-01-01

    The structural properties of the amorphous Si (a-Si), which was created from crystalline silicon by 2 MeV electron irradiation at low temperatures about 25 K, are examined in detail by means of transmission electron microscopy and transmission electron diffraction. The peak positions in the radial distribution function (RDF) of the a-Si correspond well to those of a-Si fabricated by other techniques. The electron-irradiation-induced a-Si returns to crystalline Si after annealing at 550 C

  20. Molecular simulation of freestanding amorphous nickel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

    2013-10-31

    Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

  1. Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

    Directory of Open Access Journals (Sweden)

    Kirill O. Bugaev

    2012-01-01

    Full Text Available Vibrational properties of hydrogenated silicon-rich nitride (SiN:H of various stoichiometry (0.6≤≤1.3 and hydrogenated amorphous silicon (a-Si:H films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at 1130∘C and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si–H bonds. From analysis of the FTIR data of the Si–N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data a-Si:H films with hydrogen concentration 15% and lower contain mainly Si–H chemical species, and films with hydrogen concentration 30–35% contain mainly Si–H2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.

  2. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  3. A near-wearless and extremely long lifetime amorphous carbon film under high vacuum.

    Science.gov (United States)

    Wang, Liping; Zhang, Renhui; Jansson, Ulf; Nedfors, Nils

    2015-06-10

    Prolonging wear life of amorphous carbon films under vacuum was an enormous challenge. In this work, we firstly reported that amorphous carbon film as a lubricant layer containing hydrogen, oxygen, fluorine and silicon (a-C:H:O:F:Si) exhibited low friction (~0.1), ultra-low wear rate (9.0 × 10(-13) mm(3) N(-1) mm(-1)) and ultra-long wear life (>2 × 10(6) cycles) under high vacuum. We systematically examined microstructure and composition of transfer film for understanding of the underlying frictional mechanism, which suggested that the extraordinarily excellent tribological properties were attributed to the thermodynamically and structurally stable FeF2 nanocrystallites corroborated using first-principles calculations, which were induced by the tribochemical reaction.

  4. The production of UV Absorber amorphous cerium sulfide thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kariper, İshak Afşin, E-mail: akariper@gmail.com [Faculty of Education, Erciyes University, Kayseri (Turkey)

    2017-10-15

    This study investigates the production of cerium sulfide (CeSx) amorphous thin films on substrates (commercial glass) by chemical bath deposition at different pH levels. The transmittance, absorption, optical band gap and refractive index of the films are measured by UV/VIS Spectrum. According to XRD analysis, the films show amorphous structure in the baths with pH: 1 to 5. It has been observed that the optical and structural properties of the films depend on pH value of the bath. The optical band gap (2.08 eV to 3.16 eV) of the films changes with the film thickness (23 nm to 1144 nm). We show that the refractive index has a positive relationship with the film thickness, where the values of 1.93, 1.45, 1.42, 2.60 and 1.39 are obtained for the former, and 34, 560, 509, 23 and 1144 nm (at 550 nm wavelength) for the latter. We compare the optical properties of amorphous and crystal form of CeSx thin films. We show that the optical band gaps of the amorphous CeS{sub x} are lower than that of crystal CeS{sub x} . (author)

  5. Development of amorphous silicon based EUV hardmasks through physical vapor deposition

    Science.gov (United States)

    De Silva, Anuja; Mignot, Yann; Meli, Luciana; DeVries, Scott; Xu, Yongan; Seshadri, Indira; Felix, Nelson M.; Zeng, Wilson; Cao, Yong; Phan, Khoi; Dai, Huixiong; Ngai, Christopher S.; Stolfi, Michael; Diehl, Daniel L.

    2017-10-01

    Extending extreme ultraviolet (EUV) single exposure patterning to its limits requires more than photoresist development. The hardmask film is a key contributor in the patterning stack that offers opportunities to enhance lithographic process window, increase pattern transfer efficiency, and decrease defectivity when utilizing very thin film stacks. This paper introduces the development of amorphous silicon (a-Si) deposited through physical vapor deposited (PVD) as an alternative to a silicon ARC (SiARC) or silicon-oxide-type EUV hardmasks in a typical trilayer patterning scheme. PVD offers benefits such as lower deposition temperature, and higher purity, compared to conventional chemical vapor deposition (CVD) techniques. In this work, sub-36nm pitch line-space features were resolved with a positive-tone organic chemically-amplified resist directly patterned on PVD a-Si, without an adhesion promotion layer and without pattern collapse. Pattern transfer into the underlying hardmask stack was demonstrated, allowing an evaluation of patterning metrics related to resolution, pattern transfer fidelity, and film defectivity for PVD a-Si compared to a conventional tri-layer patterning scheme. Etch selectivity and the scalability of PVD a-Si to reduce the aspect ratio of the patterning stack will also be discussed.

  6. FDTD simulation of amorphous silicon waveguides for microphotonics applications

    Science.gov (United States)

    Fantoni, A.; Lourenço, P.; Pinho, P.; Vieira, M.,

    2017-05-01

    In this work we correlate the dimension of the waveguide with small variations of the refractive index of the material used for the waveguide core. We calculate the effective modal refractive index for different dimensions of the waveguide and with slightly variation of the refractive index of the core material. These results are used as an input for a set of Finite Difference Time Domain simulation, directed to study the characteristics of amorphous silicon waveguides embedded in a SiO2 cladding. The study considers simple linear waveguides with rectangular section for studying the modal attenuation expected at different wavelengths. Transmission efficiency is determined analyzing the decay of the light power along the waveguides. As far as near infrared wavelengths are considered, a-Si:H shows a behavior highly dependent on the light wavelength and its extinction coefficient rapidly increases as operating frequency goes into visible spectrum range. The simulation results show that amorphous silicon can be considered a good candidate for waveguide material core whenever the waveguide length is as short as a few centimeters. The maximum transmission length is highly affected by the a-Si:H defect density, the mid-gap density of states and by the waveguide section area. The simulation results address a minimum requirement of 300nm×400nm waveguide section in order to keep attenuation below 1 dB cm-1.

  7. Contribution to the analysis of hydrogenated amorphous silicon by nuclear methods

    International Nuclear Information System (INIS)

    Jeannerot, Luc.

    1981-01-01

    The physico chemical characterization of hydrogenated amorphous silicon thin films (0,5 to 2 μm thick) makes use of nuclear microanalysis for quantitative determination and depth profiling of the elements hydrogen, oxygen, argon and carbon. Concerning the methods, performances of the hydrogen analysis using the 1 H( 15 N, αγ) nuclear reaction are presented emphasizing the precision and the analytical consequences of the interaction ion-material. For charged particles data processing (mainly Rutherford backscattering) computer treatments have been developed either for concentration profile obtention as for spectra prediction of given material configurations. The essential results concerning hydrogenated silicon prepared by RF sputtering are on one hand the correlation between the oxygen incorporation and the beam-induced hydrogen effusion and in the other hand the role of the substrate in the impurities incorporation. From the study of the elaboration conditions of the material a tentative interpretation is made for the incorporation and the role of oxygen [fr

  8. Photo-excited hot carrier dynamics in hydrogenated amorphous silicon imaged by 4D electron microscopy

    Science.gov (United States)

    Liao, Bolin; Najafi, Ebrahim; Li, Heng; Minnich, Austin J.; Zewail, Ahmed H.

    2017-09-01

    Charge carrier dynamics in amorphous semiconductors has been a topic of intense research that has been propelled by modern applications in thin-film solar cells, transistors and optical sensors. Charge transport in these materials differs fundamentally from that in crystalline semiconductors owing to the lack of long-range order and high defect density. Despite the existence of well-established experimental techniques such as photoconductivity time-of-flight and ultrafast optical measurements, many aspects of the dynamics of photo-excited charge carriers in amorphous semiconductors remain poorly understood. Here, we demonstrate direct imaging of carrier dynamics in space and time after photo-excitation in hydrogenated amorphous silicon (a-Si:H) by scanning ultrafast electron microscopy (SUEM). We observe an unexpected regime of fast diffusion immediately after photoexcitation, together with spontaneous electron-hole separation and charge trapping induced by the atomic disorder. Our findings demonstrate the rich dynamics of hot carrier transport in amorphous semiconductors that can be revealed by direct imaging based on SUEM.

  9. Amorphous silicon pixel layers with cesium iodide converters for medical radiography

    International Nuclear Information System (INIS)

    Jing, T.; Cho, G.; Goodman, C.A.

    1993-11-01

    We describe the properties of evaporated layers of Cesium Iodide (Thallium activated) deposited on substrates that enable easy coupling to amorphous silicon pixel arrays. The CsI(Tl) layers range in thickness from 65 to 220μm. We used the two-boat evaporator system to deposit CsI(Tl) layers. This system ensures the formation of the scintillator film with homogenous thallium concentration which is essential for optimizing the scintillation light emission efficiency. The Tl concentration was kept to 0.1--0.2 mole percent for the highest light output. Temperature annealing can affect the microstructure as well as light output of the CsI(Tl) film. 200--300C temperature annealing can increase the light output by a factor of two. The amorphous silicon pixel arrays are p-i-n diodes approximately lμm thick with transparent electrodes to enable them to detect the scintillation light produced by X-rays incident on the CsI(Tl). Digital radiography requires a good spatial resolution. This is accomplished by making the detector pixel size less then 50μm. The light emission from the CsI(Tl) is collimated by techniques involving the deposition process on pattered substrates. We have measured MTF of greater than 12 line pairs per mm at the 10% level

  10. Experimental and Computer Modelling Studies of Metastability of Amorphous Silicon Based Solar Cells

    NARCIS (Netherlands)

    Munyeme, Geoffrey

    2003-01-01

    We present a combination of experimental and computer modelling studies of the light induced degradation in the performance of amorphous silicon based single junction solar cells. Of particular interest in this study is the degradation kinetics of different types of amorphous silicon single junction

  11. Density functional study of hydrogen in amorphous silicon

    Science.gov (United States)

    Tuttle, Blair R.

    Hydrogenated amorphous silicon is a relatively new material with device applications including photovoltaics. Intrinsic and light-induced electronic defects reduce the efficiency of a-Si:H solar cells. Although hydrogen is implicated in these defects, microscopic understanding of the structure and energetics of hydrogen in a-Si:H has been limited. The current limits are in part due to the lack of reliable theoretical calculations. Here we apply density functional methods to study H in a-Si:H. First, we develop a new atomistic model for a-Si:H. Then, using molecular dynamics simulations, we compare several currently available atomistic models. Finally, we calculate the properties of hydrogen in these models, including the geometric environments, the energetics, the electronic structure and the vibrational properties. Our most important conclusions are presented below. Our calculations are consistent with the following microscopic picture for long range diffusion of H in a-Si:H. Clustered Si-H bonds constitute the dominant trapping species. Upon the dissociation of 2 H atoms, a Si-Si bond forms leaving a nominally 4-fold coordinated weak bond complex. The 2 H atoms move away separately along Si-Si bond center sites until trapped at another weak bond complex. The calculated activation energy is found in agreement with established experimental results. Also, our calculations are successfully applied to observations of H evolution, hydrogen-deuterium exchange and long range diffusion in p-type amorphous silicon. Our calculations clarify the role of H during electronic defect formation. We calculate the energetics for H to move from a variety of Si-H bonds to the bulk chemical potential. For isolated Si-H bonds (i.e. in micro-cavities without any bond reconstruction) the energetics are not consistent with observations. However, if the remaining Si reconstructs with a nearby silicon creating a 5-fold coordinated defect then the energetics are in agreement with

  12. Piezoresistive gauge factor of hydrogenated amorphous carbon films

    Science.gov (United States)

    Tibrewala, A.; Peiner, E.; Bandorf, R.; Biehl, S.; Lüthje, H.

    2006-06-01

    In this paper we report on the transport properties of hydrogenated amorphous carbon (a-C:H) which is an attractive material for strain gauges and can also be used in flow meters, accelerometers and vibrational sensors. The a-C:H films were deposited at -350 V bias voltage on silicon (Si) substrates using plasma assisted chemical vapor deposition (PACVD). Current-voltage characteristics of a-C:H/n-Si heterojunctions show ohmic behavior within operating voltages of ±1 V. In the higher voltage range the Frenkel-Poole mechanism is dominant. Conduction is thermally activated at temperatures ranging from 23 °C to 150 °C. The activation energy amounts to 0.48 eV. A-C:H resistors are successfully integrated as strain gauges in Si bulk micromachined force sensors. Piezoresistive gauge factors are measured for the a-C:H strain gauge resistors in the temperature range 23-60 °C. The measured piezoresistive gauge factors are in between 40 and 90 for a-C:H with resistivities in the range 100-700 MΩ cm.

  13. Amorphous silicon passivation for 23.3% laser processed back contact solar cells

    Science.gov (United States)

    Carstens, Kai; Dahlinger, Morris; Hoffmann, Erik; Zapf-Gottwick, Renate; Werner, Jürgen H.

    2017-08-01

    This paper presents amorphous silicon deposited at temperatures below 200 °C, leading to an excellent passivation layer for boron doped emitter and phosphorus doped back surface field areas in interdigitated back contact solar cells. A higher deposition temperature degrades the passivation of the boron emitter by an increased hydrogen effusion due to lower silicon hydrogen bond energy, proved by hydrogen effusion measurements. The high boron surface doping in crystalline silicon causes a band bending in the amorphous silicon. Under these conditions, at the interface, the intentionally undoped amorphous silicon becomes p-type conducting, with the consequence of an increased dangling bond defect density. For bulk amorphous silicon this effect is described by the defect pool model. We demonstrate, that the defect pool model is also applicable to the interface between amorphous and crystalline silicon. Our simulation shows the shift of the Fermi energy towards the valence band edge to be more pronounced for high temperature deposited amorphous silicon having a small bandgap. Application of optimized amorphous silicon as passivation layer for the boron doped emitter and phosphorus doped back surface field on the rear side of laser processed back contact solar cells, fabricated using four laser processing steps, yields an efficiency of 23.3%.

  14. Advantages of N-Type Hydrogenated Microcrystalline Silicon Oxide Films for Micromorph Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2013-01-01

    Full Text Available We report on the development and application of n-type hydrogenated microcrystalline silicon oxide films (n μc-SiO:H in hydrogenated amorphous silicon oxide/hydrogenated microcrystalline silicon (a-SiO:H/μc-Si:H micromorph solar cells. The n μc-SiO:H films with high optical bandgap and low refractive index could be obtained when a ratio of carbon dioxide (CO2 to silane (SiH4 flow rate was raised; however, a trade-off against electrical property was observed. We applied the n μc-SiO:H films in the top a-SiO:H cell and investigated the changes in cell performance with respect to the electrical and optical properties of the films. It was found that all photovoltaic parameters of the micromorph silicon solar cells using the n top μc-SiO:H layer enhanced with increasing the CO2/SiH4 ratio up to 0.23, where the highest initial cell efficiency of 10.7% was achieved. The enhancement of the open circuit voltage (Voc was likely to be due to a reduction of reverse bias at subcell connection—n top/p bottom interface—and a better tunnel recombination junction contributed to the improvement in the fill factor (FF. Furthermore, the quantum efficiency (QE results also have demonstrated intermediate-reflector function of the n μc-SiO:H films.

  15. Superhard PVD carbon films deposited with different gradients with and without additions of titanium and silicon

    International Nuclear Information System (INIS)

    Bauer, C.

    2003-10-01

    This work focusses on thin carbon-based films, deposited by magnetron sputtering with additional argon ion bombardment (0 eV to 800 eV) without extra adhesive layer on hard metal inserts. As one possibility of increasing the reduced adherence of hard carbon films the deposition of films with additions of titanium and silicon is studied. The aim of this work is to examine the influence of a modification of the transition between substrate and film by realizing three different types of deposition gradients. The pure carbon films are amorphous, the dominant network of atoms is formed by sp 2 bonded atoms. The amount of sp 3 bonded atoms is up to 30% and is influenced by the bombarding argon ion energy. Carbon films with additions of silicon are amorphous, only in films with a high amount of titanium (approx. 20 at%) nanocomposites of titanium carbide crystals with diameters of less than 5 nm in an amorphous carbon matrix were found. The mechanical properties and the behavior of single layer carbon films strongly depend on the argon ion energy. An increase of this energy leads to higher film hardness and higher residual stress and results in the delamination of superhard carbon films on hard metal substrates. The adhesion of single layer films for ion energies of more than 200 eV is significantly improved by additions of titanium and silicon, respectively. The addition of 23 at% silicon and titanium, respectively leads to a high reduction of the residual stress. In a non-reactive PVD process thin films were deposited with a continuously gradient in chemical composition. The results of the investigations of the films with two different concentrations of titanium and silicon, respectively show that carbon-based films with a good adhesion could be deposited. The combination of the two gradients in structure and properties and in chemical composition leads in the system with carbon and silicon carbide to hard and very adhesive films. Especially for carbon films with a high

  16. Modelling structure and properties of amorphous silicon boron nitride ceramics

    Directory of Open Access Journals (Sweden)

    Johann Christian Schön

    2011-06-01

    Full Text Available Silicon boron nitride is the parent compound of a new class of high-temperature stable amorphous ceramics constituted of silicon, boron, nitrogen, and carbon, featuring a set of properties that is without precedent, and represents a prototypical random network based on chemical bonds of predominantly covalent character. In contrast to many other amorphous materials of technological interest, a-Si3B3N7 is not produced via glass formation, i.e. by quenching from a melt, the reason being that the binary components, BN and Si3N4, melt incongruently under standard conditions. Neither has it been possible to employ sintering of μm-size powders consisting of binary nitrides BN and Si3N4. Instead, one employs the so-called sol-gel route starting from single component precursors such as TADB ((SiCl3NH(BCl2. In order to determine the atomic structure of this material, it has proven necessary to simulate the actual synthesis route.Many of the exciting properties of these ceramics are closely connected to the details of their amorphous structure. To clarify this structure, it is necessary to employ not only experimental probes on many length scales (X-ray, neutron- and electron scattering; complex NMR experiments; IR- and Raman scattering, but also theoretical approaches. These address the actual synthesis route to a-Si3B3N7, the structural properties, the elastic and vibrational properties, aging and coarsening behaviour, thermal conductivity and the metastable phase diagram both for a-Si3B3N7 and possible silicon boron nitride phases with compositions different from Si3N4: BN = 1 : 3. Here, we present a short comprehensive overview over the insights gained using molecular dynamics and Monte Carlo simulations to explore the energy landscape of a-Si3B3N7, model the actual synthesis route and compute static and transport properties of a-Si3BN7.

  17. Vibrational spectroscopy characterization of magnetron sputtered silicon oxide and silicon oxynitride films

    Energy Technology Data Exchange (ETDEWEB)

    Godinho, V., E-mail: godinho@icmse.csic.es [Instituto de Ciencia de Materiales de Sevilla-CSIC/US, Avda. Americo Vespucio no 49, 41092 Seville (Spain); Universite Libre de Bruxelles, Avenue F.D. Roosevelt 50, B 1050 Bruxelles (Belgium); Denisov, V.N.; Mavrin, B.N.; Novikova, N.N.; Vinogradov, E.A.; Yakovlev, V.A. [Institute for Spectroscopy - Russian Academy of Sciences, 142190, Troitsk, Moscow reg. (Russian Federation); Fernandez-Ramos, C. [Instituto de Ciencia de Materiales de Sevilla-CSIC/US, Avda. Americo Vespucio no 49, 41092 Seville (Spain); Institute for Prospective and Technological Studies-JRC European Commission, C/Inca Garcilaso s/n, 41092 Seville (Spain); Jimenez de Haro, M.C.; Fernandez, A. [Instituto de Ciencia de Materiales de Sevilla-CSIC/US, Avda. Americo Vespucio no 49, 41092 Seville (Spain)

    2009-10-15

    Vibrational (infrared and Raman) spectroscopy has been used to characterize SiO{sub x}N{sub y} and SiO{sub x} films prepared by magnetron sputtering on steel and silicon substrates. Interference bands in the infrared reflectivity measurements provided the film thickness and the dielectric function of the films. Vibrational modes bands were obtained both from infrared and Raman spectra providing useful information on the bonding structure and the microstructure (formation of nano-voids in some coatings) for these amorphous (or nanocrystalline) coatings. X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) analysis have also been carried out to determine the composition and texture of the films, and to correlate these data with the vibrational spectroscopy studies. The angular dependence of the reflectivity spectra provides the dispersion of vibrational and interference polaritons modes, what allows to separate these two types of bands especially in the frequency regions where overlaps/resonances occurred. Finally the attenuated total reflection Fourier transform infrared measurements have been also carried out demonstrating the feasibility and high sensitivity of the technique. Comparison of the spectra of the SiO{sub x}N{sub y} films prepared in various conditions demonstrates how films can be prepared from pure silicon oxide to silicon oxynitride with reduced oxygen content.

  18. Amorphous tin-cadmium oxide films and the production thereof

    Science.gov (United States)

    Li, Xiaonan; Gessert, Timothy A

    2013-10-29

    A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1.times.10.sup.20 cm.sup.-3 and 2.times.10.sup.20 cm.sup.-3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm.sup.2V.sup.-1 s.sup.-1 and 60 cm.sup.2V.sup.-1 s.sup.-1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

  19. Coaxial carbon plasma gun deposition of amorphous carbon films

    Science.gov (United States)

    Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

    1984-01-01

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

  20. Elastic properties of amorphous thin films studied by Rayleigh waves

    International Nuclear Information System (INIS)

    Schwarz, R.B.; Rubin, J.B.

    1993-01-01

    Physical vapor deposition in ultra-high vacuum was used to co-deposit nickel and zirconium onto quartz single crystals and grow amorphous Ni 1-x Zr x (0.1 < x < 0.87) thin film. A high-resolution surface acoustic wave technique was developed for in situ measurement of film shear moduli. The modulus has narrow maxima at x = 0. 17, 0.22, 0.43, 0.5, 0.63, and 0.72, reflecting short-range ordering and formation of aggregates in amorphous phase. It is proposed that the aggregates correspond to polytetrahedral atom arrangements limited in size by geometrical frustration

  1. NMR STUDIES OF Co-BASED NITRIDE AMORPHOUS FILMS

    OpenAIRE

    Le Dang, K.; Veillet, P.; Sakakima, H.; Krishnan, R.

    1988-01-01

    We have carried out at 4 K spin-echo measurements in both single and multilayer (nitride and nonnitride layers) amorphous films of (Co83Nb11Ta2Zr4)1-x N100x. The average Co hyperfine field and the local in-plane anisotropy (K) increase with N (x) content in agreement with magnetization measurements. Annealing leads to a slight increase in K for single layer but a strong decrease for multilayer which remains amorphous contrary to the non-nitride films.

  2. Rapid Thermal annealing of silicon layers amorphized by ion implantation

    International Nuclear Information System (INIS)

    Hasenack, C.M.

    1986-01-01

    The recrystallization behavior and the supression mechanisms of the residual defects of silicon layers amorphized by ion implantation, were investigated. The samples were annealed with the aid of a rapid thermal annealing (RTA) system at temperature range from 850 to 1200 0 C, and annealing time up to 120 s. Random and aligned Rutherford backscattering spectroscopy were used to analyse the samples. Similarities in the recrystallization behavior for layers implanted with ions of the same chemical groups such as As or Sb; Ge, Sn or Pb, In or Ga, are observed. The results show that the effective supression of resisual defects of the recrystallired layers is vinculated to the redistribution of impurities via thermal diffusion. (author) [pt

  3. Microstructure and hydrogen dynamics in hydrogenated amorphous silicon carbides

    Science.gov (United States)

    Shinar, J.; Shinar, R.; Williamson, D. L.; Mitra, S.; Kavak, H.; Dalal, V. L.

    1999-12-01

    Small angle x-ray scattering (SAXS) and deuterium secondary-ion-mass spectrometry (DSIMS) studies of the microstructure and hydrogen dynamics in undoped rf-sputter-deposited (RFS) and undoped and boron-doped electron-cyclotron-resonance-deposited (ECR) hydrogenated amorphous silicon carbides (a-Si1-xCx:H) are described. In the RFS carbides with xcarbides with xBoron doping of the ECR carbides also reduced the bulklike Si-bonded H content, suggesting that it induces nanovoids, consistent with the observed suppression of long-range motion of most of the H and D atoms. However, a small fraction of the H atoms appeared to undergo fast diffusion, reminiscent of the fast diffusion in B-doped a-Si:H.

  4. Environmental aspects and risks of amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Van Engelenburg, B.C.W.; Alsema, E.A.

    1993-01-01

    The aim of the study on the title subject is to identify potential bottlenecks for a number of (future) solar cell technologies and to formulate ensuing recommendations with regard to the photovoltaic (PV) research and development policy in the Netherlands. The potential environmental effects of amorphous silicon PV modules are investigated for their entire life cycle. For the life cycle assessment (LCA) the product life cycle is divided into a number of processes, each of which is described by the typical product input and output flow, secondary materials input, energy input, process yield, emissions to water and air, solid waste production and the output of reusable (secondary) materials. Regarding the development towards future (energy) technologies three possible technology cases are defined: a worst, a base and a best case.In order to facilitate the material flow accounting for LCA, a special LCA computer model has been developed in connection with a data base system, containing process descriptions. Also attention is paid to possible risks concerning occupational health and safety. The overall conclusion is that, from am environmental and from a risk point of view, no serious bottlenecks can be identified in the life cycle of amorphous silicon PV modules. Within these constraints this technology can be called sustainable, when the present developments persevere and the available safety practices will be incorporated in the production processes to a large degree. Recommendations are given for further research on the title subject to fill gaps in the knowledge of parameters of certain processes for PV modules. 5 figs., 20 tabs., 2 appendices, 74 refs

  5. Optical and passivating properties of hydrogenated amorphous silicon nitride deposited by plasma enhanced chemical vapour deposition for application on silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wight, Daniel Nilsen

    2008-07-01

    Within this thesis, several important subjects related to the use of amorphous silicon nitride made by plasma enhanced chemical vapour deposition as an anti-reflective coating on silicon solar cells are presented. The first part of the thesis covers optical simulations to optimise single and double layer anti-reflective coatings with respect to optical performance when situated on a silicon solar cell. The second part investigates the relationship between important physical properties of silicon nitride films when deposited under different conditions. The optical simulations were either based on minimising the reflectance off a silicon nitride/silicon wafer stack or maximising the transmittance through the silicon nitride into the silicon wafer. The former method allowed consideration of the reflectance off the back surface of the wafer, which occurs typically at wavelengths above 1000 nm due to the transparency of silicon at these wavelengths. However, this method does not take into consideration the absorption occurring in the silicon nitride, which is negligible at low refractive indexes but quite significant when the refractive index increases above 2.1. For high-index silicon nitride films, the latter method is more accurate as it considers both reflectance and absorbance in the film to calculate the transmittance into the Si wafer. Both methods reach similar values for film thickness and refractive index for optimised single layer anti-reflective coatings, due to the negligible absorption occurring in these films. For double layer coatings, though, the reflectance based simulations overestimated the optimum refractive index for the bottom layer, which would have lead to excessive absorption if applied to real anti-reflective coatings. The experimental study on physical properties for silicon nitride films deposited under varying conditions concentrated on the estimation of properties important for its applications, such as optical properties, passivation

  6. Correlating the properties of amorphous silicon with its flexibility volume

    Science.gov (United States)

    Fan, Zhao; Ding, Jun; Li, Qing-Jie; Ma, Evan

    2017-04-01

    For metallic glasses, "flexibility volume" has recently been introduced as a property-revealing indicator of the structural state the glass is in. This parameter incorporates the atomic volume and the vibrational mean-square displacement, to combine both static structure and dynamics information. Flexibility volume was shown to quantitatively correlate with the properties of metallic glasses [J. Ding et al., Nat. Commun. 7, 13733 (2016), 10.1038/ncomms13733]. However, it remains to be examined if this parameter is useful for other types of glasses with bonding characteristics, atomic packing structures, as well as properties that are distinctly different from metallic glasses. In this paper, we tackle this issue through systematic molecular-dynamics simulations of amorphous silicon (a -Si) models produced with different cooling rates, as a -Si is a prototypical covalently bonded network glass whose structure and properties cannot be characterized using structural parameters such as free volume used for metallic and polymeric glasses. Specifically, we demonstrate a quantitative prediction of the shear modulus of a -Si from the flexibility for atomic motion. This flexibility volume descriptor, when evaluated on the atomic scale, is shown to also correlate well with local packing, as well as with the propensity for thermal relaxations and shear transformations, providing a metric to map out and explain the structural and mechanical heterogeneity in the amorphous material. This case study of a model of covalently bonded network a -Si, together with our earlier demonstration for metallic glasses, points to the universality of flexibility volume as an indicator of the structure state to link with properties, applicable across amorphous materials with different chemical bonding and atomic packing structures.

  7. Microhardness studies on thin carbon films grown on P-type, (100) silicon

    Science.gov (United States)

    Kolecki, J. C.

    1982-01-01

    A program to grow thin carbon films and investigate their physical and electrical properties is described. Characteristics of films grown by rf sputtering and vacuum arc deposition on p type, (100) silicon wafers are presented. Microhardness data were obtained from both the films and the silicon via the Vickers diamond indentation technique. These data show that the films are always harder than the silicon, even when the films are thin (of the order of 1000 A). Vacuum arc films were found to contain black carbon inclusions of the order of a few microns in size, and clusters of inclusions of the order of tens of microns. Transmission electron diffraction showed that the films being studied were amorphous in structure.

  8. Crystallization kinetics of amorphous aluminum-tungsten thin films

    Energy Technology Data Exchange (ETDEWEB)

    Car, T.; Radic, N. [Rugjer Boskovic Inst., Zagreb (Croatia). Div. of Mater. Sci.; Ivkov, J. [Institute of Physics, Bijenicka 46, P.O.B. 304, HR-10000 Zagreb (Croatia); Babic, E.; Tonejc, A. [Faculty of Sciences, Physics Department, Bijenicka 32, P.O.B. 162, HR-10000 Zagreb (Croatia)

    1999-01-01

    Crystallization kinetics of the amorphous Al-W thin films under non-isothermal conditions was examined by continuous in situ electrical resistance measurements in vacuum. The estimated crystallization temperature of amorphous films in the composition series of the Al{sub 82}W{sub 18} to Al{sub 62}W{sub 38} compounds ranged from 800 K to 920 K. The activation energy for the crystallization and the Avrami exponent were determined. The results indicated that the crystallization mechanism in films with higher tungsten content was a diffusion-controlled process, whereas in films with the composition similar to the stoichiometric compound (Al{sub 4}W), the interface-controlled crystallization probably occurred. (orig.) With 4 figs., 1 tab., 26 refs.

  9. Amorphous SiC layers for electrically conductive Rugate filters in silicon based solar cells

    Science.gov (United States)

    Janz, S.; Peters, M.; Künle, M.; Gradmann, R.; Suwito, D.

    2010-05-01

    The subject of this work is the development of an electrically conductive Rugate filter for photovoltaic applications. We think that the optical as well as the electrical performance of the filter can be adapted especially to the requirements of crystalline Si thin-film and amorphous/crystalline silicon tandem solar cells. We have deposited amorphous hydrogenated Silicon Carbide layers (a-SixC1-x:H) with the precursor gases methane (CH4), silane (SiH4) and diborane (B2H6) applying Plasma Enhanced Chemical Vapour Deposition (PECVD). Through changing just the precursor flows a floating refractive index n from 1.9 to 3.5 (at 633 nm) could be achieved quite accurately. Different complex layer stacks (up to 200 layers) with a sinusoidal refractive index variation normal to the incident light were deposited in just 80 min on 100x100 mm2. Transmission measurements show good agreement between simulation and experiment which proofs our ability to control the deposition process, the good knowledge of the optical behaviour of the different SiC single layers and the advanced stage of our simulation model. The doped single layers show lateral conductivities which were extremely dependent on the Si/C ratio.

  10. Amorphous carbon film growth on Si: Correlation between stress and generation of defects into the substrate

    International Nuclear Information System (INIS)

    Brusa, R.S.; Macchi, C.; Mariazzi, S.; Karwasz, G.P.; Laidani, N.; Bartali, R.; Anderle, M.

    2005-01-01

    Amorphous carbon films of several thicknesses were prepared by graphite sputtering on crystalline silicon substrate. The samples were depth profiled with positron annihilation spectroscopy for open-volume measurements and characterized for their residual internal stress. It was found that after film growth the substrate presents vacancy-like defects decorated by oxygen in a layer extending in the substrate by several tens of nanometers beyond the film/Si interface. The width of the defected layer and the decoration of vacancy-like defects are directly and inversely proportional to the measured intensity of the residual stress, respectively. These findings indicate the existence of a relaxation mechanism of the stress in the films that involves deeply the substrate. The decorated vacancy-like defects are suggested to be bounded to dislocations induced in the substrate by the stress relaxation

  11. Ballistic Phonon Penetration Depth in Amorphous Silicon Dioxide.

    Science.gov (United States)

    Yang, Lin; Zhang, Qian; Cui, Zhiguang; Gerboth, Matthew; Zhao, Yang; Xu, Terry T; Walker, D Greg; Li, Deyu

    2017-12-13

    Thermal transport in amorphous silicon dioxide (a-SiO 2 ) is traditionally treated as random walks of vibrations owing to its greatly disordered structure, which results in a mean free path (MFP) approximately the same as the interatomic distance. However, this picture has been debated constantly and in view of the ubiquitous existence of thin a-SiO 2 layers in nanoelectronic devices, it is imperative to better understand this issue for precise thermal management of electronic devices. Different from the commonly used cross-plane measurement approaches, here we report on a study that explores the in-plane thermal conductivity of double silicon nanoribbons with a layer of a-SiO 2 sandwiched in-between. Through comparing the thermal conductivity of the double ribbon samples with that of corresponding single ribbons, we show that thermal phonons can ballistically penetrate through a-SiO 2 of up to 5 nm thick even at room temperature. Comprehensive examination of double ribbon samples with various oxide layer thicknesses and van der Waals bonding strengths allows for extraction of the average ballistic phonon penetration depth in a-SiO 2 . With solid experimental data demonstrating ballistic phonon transport through a-SiO 2 , this work should provide important insight into thermal management of electronic devices.

  12. Wavelength prediction of laser incident on amorphous silicon detector by neural network

    International Nuclear Information System (INIS)

    Esmaeili Sani, V.; Moussavi-Zarandi, A.; Kafaee, M.

    2011-01-01

    In this paper we present a method based on artificial neural networks (ANN) and the use of only one amorphous semiconductor detector to predict the wavelength of incident laser. Amorphous semiconductors and especially amorphous hydrogenated silicon, a-Si:H, are now widely used in many electronic devices, such as solar cells, many types of position sensitive detectors and X-ray imagers for medical applications. In order to study the electrical properties and detection characteristics of thin films of a-Si:H, n-i-p structures have been simulated by SILVACO software. The basic electronic properties of most of the materials used are known, but device modeling depends on a large number of parameters that are not all well known. In addition, the relationship between the shape of the induced anode current and the wavelength of the incident laser leads to complicated calculations. Soft data-based computational methods can model multidimensional non-linear processes and represent the complex input-output relation between the form of the output signal and the wavelength of incident laser.

  13. Wavelength prediction of laser incident on amorphous silicon detector by neural network

    Energy Technology Data Exchange (ETDEWEB)

    Esmaeili Sani, V., E-mail: vaheed_esmaeely80@yahoo.com [Amirkabir University of Technology, Faculty of Physics, P.O. Box 4155-4494, Tehran (Iran, Islamic Republic of); Moussavi-Zarandi, A.; Kafaee, M. [Amirkabir University of Technology, Faculty of Physics, P.O. Box 4155-4494, Tehran (Iran, Islamic Republic of)

    2011-10-21

    In this paper we present a method based on artificial neural networks (ANN) and the use of only one amorphous semiconductor detector to predict the wavelength of incident laser. Amorphous semiconductors and especially amorphous hydrogenated silicon, a-Si:H, are now widely used in many electronic devices, such as solar cells, many types of position sensitive detectors and X-ray imagers for medical applications. In order to study the electrical properties and detection characteristics of thin films of a-Si:H, n-i-p structures have been simulated by SILVACO software. The basic electronic properties of most of the materials used are known, but device modeling depends on a large number of parameters that are not all well known. In addition, the relationship between the shape of the induced anode current and the wavelength of the incident laser leads to complicated calculations. Soft data-based computational methods can model multidimensional non-linear processes and represent the complex input-output relation between the form of the output signal and the wavelength of incident laser.

  14. Systematic study of amorphous hydrogenated and fluorinated carbon films

    Science.gov (United States)

    Lamperti, A.; Ossi, P. M.

    2003-01-01

    Amorphous fluorinated carbon films were grown from CF 4 and C 2H 2 mixtures, using a Plasma Assisted Chemical Vapour Deposition (PACVD) apparatus. Two sets of films were deposited, changing in a systematic way the CF 4 flux and the bias voltage ( Vb). Film composition and structure were analysed by secondary ion mass spectroscopy (SIMS), infrared (IR) and Raman spectroscopies. Film hardness was obtained by micro-indentation measurements. On increasing fluorine content in films, hardness decreases and a fluorescence background in Raman spectra appears at high fluorine content, showing a diamond- to polymer-like structural transition. Infrared spectra indicate the presence of CF x, CCHF and CCF 2 groups in the films. Our data are compared with previous results in the literature and the mechanisms involved in film formation are discussed, especially regarding fluorine substitution for hydrogen.

  15. Textured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on amorphous substrates by molecular beam epitaxy

    NARCIS (Netherlands)

    Boschker, Jos E.; Tisbi, E.; Placidi, E.; Momand, Jamo; Redaelli, Andrea; Kooi, Bart J.; Arciprete, Fabrizio; Calarco, Raffaella

    The realization of textured films of 2-dimensionally (2D) bonded materials on amorphous substrates is important for the integration of this material class with silicon based technology. Here, we demonstrate the successful growth by molecular beam epitaxy of textured Sb2Te3 films and GeTe/Sb2Te3

  16. Nano structures of amorphous silicon: localization and energy gap

    Directory of Open Access Journals (Sweden)

    Z Nourbakhsh

    2013-10-01

    Full Text Available Renewable energy research has created a push for new materials; one of the most attractive material in this field is quantum confined hybrid silicon nano-structures (nc-Si:H embedded in hydrogenated amorphous silicon (a-Si:H. The essential step for this investigation is studying a-Si and its ability to produce quantum confinement (QC in nc-Si: H. Increasing the gap of a-Si system causes solar cell efficiency to increase. By computational calculations based on Density Functional Theory (DFT, we calculated a special localization factor, [G Allan et al., Phys. Rev. B 57 (1997 6933.], for the states close to HOMO and LUMO in a-Si, and found most weak-bond Si atoms. By removing these silicon atoms and passivating the system with hydrogen, we were able to increase the gap in the a-Si system. As more than 8% hydrogenate was not experimentally available, we removed about 2% of the most localized Si atoms in the almost tetrahedral a-Si system. After removing localized Si atoms in the system with 1000 Si atoms, and adding 8% H, the gap increased about 0.24 eV. Variation of the gap as a function of hydrogen percentage was in good agreement with the Tight –Binding results, but about 2 times more than its experimental value. This might come from the fact that in the experimental conditions, it does not have the chance to remove the most localized states. However, by improving the experimental conditions and technology, this value can be improved.

  17. Kerr-effect enhancement in amorphous GdFe films

    International Nuclear Information System (INIS)

    Urner-Wille, M.; Velde, T.S. te; Engen, P.G. van

    1978-01-01

    Experimental investigations of amorphous ferrimagnetic GdFe films with CeO 2 coatings of various thicknesses have been performed. It could be shown that in general an increase in Kerr rotation was accompanied by a decrease in reflectionity by the CeO 2 coatings. The results indicate an enhancement of the magneto-optic Kerr effects

  18. Growth and Physical Structure of Amorphous Boron Carbide Deposited by Magnetron Sputtering on a Silicon Substrate with a Titanium Interlayer

    Directory of Open Access Journals (Sweden)

    Roberto Caniello

    2013-01-01

    Full Text Available Multilayer amorphous boron carbide coatings were produced by radiofrequency magnetron sputtering on silicon substrates. To improve the adhesion, titanium interlayers with different thickness were interposed between the substrate and the coating. Above three hundreds nanometer, the enhanced roughness of the titanium led to the growth of an amorphous boron carbide with a dense and continuing columnar structure, and no delamination effect was observed. Correspondingly, the adhesion of the coating became three time stronger than in the case of a bare silicon substrate. Physical structure and microstructural proprieties of the coatings were investigated by means of a scan electron microscopy, atomic force microscopy and X-ray diffraction. The adhesion of the films was measured by a scratch tester.

  19. Bonding topologies in diamondlike amorphous-carbon films

    Energy Technology Data Exchange (ETDEWEB)

    SIEGAL,MICHAEL P.; PROVENCIO,PAULA P.; TALLANT,DAVID R.; SIMPSON,REGINA L.; KLEINSORGE,B.; MILNE,W.I.

    2000-01-27

    The carbon ion energy used during filtered cathodic vacuum arc deposition determines the bonding topologies of amorphous-carbon (a-C) films. Regions of relatively low density occur near the substrate/film and film/surface interfaces and their thicknesses increase with increasing deposition energy. The ion subplantation growth results in mass density gradients in the bulk portion of a-C in the growth direction; density decreases with distance from the substrate for films grown using ion energies < 60 eV and increases for films grown using ion energies > 160 eV. Films grown between these energies are the most diamondlike with relatively uniform bulk density and the highest optical transparencies. Bonding topologies evolve with increasing growth energy consistent with the propagation of subplanted carbon ions inducing a partial transformation of 4-fold to 3-fold coordinated carbon atoms.

  20. Bonding topologies in diamondlike amorphous-carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Siegal, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Provencio, P. N. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Tallant, D. R. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Simpson, R. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Kleinsorge, B. [Department of Engineering, Cambridge University, Cambridge CB2 1PZ, (United Kingdom); Milne, W. I. [Department of Engineering, Cambridge University, Cambridge CB2 1PZ, (United Kingdom)

    2000-04-10

    The carbon ion energy used during filtered cathodic vacuum arc deposition determines the bonding topologies of amorphous-carbon (a-C) films. Regions of relatively low density occur near the substrate/film and film/surface interfaces; their thicknesses increase with deposition energy. The ion subplantation growth results in mass density gradients in the bulk portion of a-C in the growth direction; density decreases with distance from the substrate for films grown using ion energies <60 eV and increases for films grown using ion energies >160 eV. Films grown between these energies are the most diamondlike with relatively uniform bulk density and the highest optical transparencies. Bonding topologies evolve with increasing growth energy consistent with the propagation of subplanted carbon ions inducing a partial transformation of {sigma}- to {pi}-bonded carbon atoms. (c) 2000 American Institute of Physics.

  1. Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

    International Nuclear Information System (INIS)

    Walton, J.T.; Hong, W.S.; Luke, P.N.; Wang, N.W.; Ziemba, F.P.

    1996-10-01

    Results on characterization of electrical properties of amorphous Si films for the 3 different growth methods (RF sputtering, PECVD [plasma enhanced], LPCVD [low pressure]) are reported. Performance of these a-Si films as heterojunctions on high resistivity p-type and n- type crystalline Si is examined by measuring the noise, leakage current, and the alpha particle response of 5mm dia detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. Results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated

  2. Research on fabrication technology for thin film solar cells for practical use. Research on low-cost fabrication technology for large-area modules (production technology for amorphous silicon solar cell modules); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Daimenseki module no tei cost seizo gijutsu (amorphous taiyo denchi module seizo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M. [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on the fabrication technology of amorphous Si solar cell modules in fiscal 1994. (1) On process technology for prototype film substrate solar cells, an advanced preprocessing equipment for film substrates, stepping roll type film forming technology, and prototype submodules were studied. A conversion efficiency of 7.2% was achieved by use of the submodule formed in an effective region of 40 {times} 40cm{sup 2}. (2) On efficiency improvement technology for film substrate solar cells, p/i and n/i interfaces, forming condition for Ag film electrodes, film thickness of transparent electrode ITO, and optimum transmissivity were studied. (3) On technology for advanced solar cells, high-quality a-SiGe: H film, ion control in plasma CVD, and a-Si film formation by plasma CVD using SiH2Cl2 were studied as production technology of narrow gap materials. (4) On advanced two-layer tandem solar cells, the defect density in optical degradation of a-Si cells by reverse bias dark current was evaluated, and outdoor exposure data were analyzed. 4 figs., 1 tab.

  3. Environmental life cycle assessment of roof-integrated flexible amorphous silicon/nanocrystalline silicon solar cell laminate

    NARCIS (Netherlands)

    Mohr, N.J.; Meijer, A.; Huijbregts, M.A.J.; Reijnders, L.

    2013-01-01

    This paper presents an environmental life cycle assessment of a roof-integrated flexible solar cell laminate with tandem solar cells composed of amorphous silicon/nanocrystalline silicon (a-Si/nc-Si). The a-Si/nc-Si cells are considered to have 10% conversion efficiency. Their expected service life

  4. Statistical properties of Barkhausen noise in amorphous ferromagnetic films.

    Science.gov (United States)

    Bohn, F; Corrêa, M A; Carara, M; Papanikolaou, S; Durin, G; Sommer, R L

    2014-09-01

    We investigate the statistical properties of the Barkhausen noise in amorphous ferromagnetic films with thicknesses in the range between 100 and 1000 nm. From Barkhausen noise time series measured with the traditional inductive technique, we perform a wide statistical analysis and establish the scaling exponents τ,α,1/σνz, and ϑ. We also focus on the average shape of the avalanches, which gives further indications on the domain-wall dynamics. Based on experimental results, we group the amorphous films in a single universality class, characterized by scaling exponents τ=1.28±0.02,α=1.52±0.3, and 1/σνz=ϑ=1.83±0.03, values compatible with that obtained for several bulk amorphous magnetic materials. Besides, we verify that the avalanche shape depends on the universality class. By considering the theoretical models for the dynamics of a ferromagnetic domain wall driven by an external magnetic field through a disordered medium found in literature, we interpret the results and identify an experimental evidence that these amorphous films, within this thickness range, present a typical three-dimensional magnetic behavior with predominant short-range elastic interactions governing the domain-wall dynamics. Moreover, we provide experimental support for the validity of a general scaling form for the average avalanche shape for non-mean-field systems.

  5. Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+

    International Nuclear Information System (INIS)

    Tsai, M.Y.; Streetman, B.G.

    1979-01-01

    Electrical properties of recrystallized amorphous silicon layers, formed by BF + 2 implants or Si + +B + implants, have been studied by differential resistivity and Hall-effect measurements. Electrical carrier distribution profiles show that boron atoms inside the amorphized Si layers can be fully activated during recrystallization at 550 0 C. The mobility is also recovered. However, the tail of the B distribution, located inside a damaged region near the original amorphous-crystalline interface, remains inactive. This inactive tail has been observed for all samples implanted with BF + 2 . Only in a thicker amorphous layer, formed for example by Si + predamage implants, can the entire B profile be activated. The etch rate of amorphous silicon in HF and the effect of fluorine on the recrystallization rate are also reported

  6. The use of amorphous silicon in fabricating a photovoltaic thermal system

    Energy Technology Data Exchange (ETDEWEB)

    Mahtani, P.; Yeghikyan, D.; Kherani, N.P.; Zukotynski, S. [Toronto Univ., ON (Canada). Dept. of Electrical and Computer Engineering

    2007-07-01

    The cost of photovoltaic-thermal (PV/T) panels can be reduced by depositing PV materials directly onto the heat exchanger of an STC system. However, most thin-film c-Si solar cells require deposition temperatures in the range of 800 degrees C to 1400 degrees C, which limits the substrates that can be used to highly doped silicon wafers, silicon carbide, and graphite. This paper suggested that the ability to deposit hydrogenated amorphous silicon (a-Si:H) at low temperatures makes the material a strong candidate for PV/T applications. A PV/T system based on directly depositing a-Si:H on the surface of a heat exchanger was presented. The system was able to overcome the drawbacks of current PV/T systems. Plasma-enhanced chemical vapor deposition (PECVD) was used to deposit a-Si:H at temperatures below 200 degrees C. The low temperature deposition allowed the a-Si:H to be directly deposited onto a heat exchanger in STC modules. Results of the study indicated that the emissivity and the thermal collection efficiency of the a-Si:H PV/T systems was higher than standard PV/T systems which used c-Si PV cells. Future work will be conducted to investigate the integration of thermally conductive and electrically insulative materials needed to interconnect the PV cells in series. 16 refs., 1 fig.

  7. Structural Color Filters Enabled by a Dielectric Metasurface Incorporating Hydrogenated Amorphous Silicon Nanodisks.

    Science.gov (United States)

    Park, Chul-Soon; Shrestha, Vivek Raj; Yue, Wenjing; Gao, Song; Lee, Sang-Shin; Kim, Eun-Soo; Choi, Duk-Yong

    2017-05-31

    It is advantageous to construct a dielectric metasurface in silicon due to its compatibility with cost-effective, mature processes for complementary metal-oxide-semiconductor devices. However, high-quality crystalline-silicon films are difficult to grow on foreign substrates. In this work, we propose and realize highly efficient structural color filters based on a dielectric metasurface exploiting hydrogenated amorphous silicon (a-Si:H), known to be lossy in the visible regime. The metasurface is comprised of an array of a-Si:H nanodisks embedded in a polymer, providing a homogeneously planarized surface that is crucial for practical applications. The a-Si:H nanodisk element is deemed to individually support an electric dipole (ED) and magnetic dipole (MD) resonance via Mie scattering, thereby leading to wavelength-dependent filtering characteristics. The ED and MD can be precisely identified by observing the resonant field profiles with the assistance of finite-difference time-domain simulations. The completed color filters provide a high transmission of around 90% in the off-resonance band longer than their resonant wavelengths, exhibiting vivid subtractive colors. A wide range of colors can be facilitated by tuning the resonance by adjusting the structural parameters like the period and diameter of the a-Si:H nanodisk. The proposed devices will be actively utilized to implement color displays, imaging devices, and photorealistic color printing.

  8. Fiber Optic Excitation of Silicon Microspheres in Amorphous and Crystalline Fluids

    NARCIS (Netherlands)

    Yilmaz, H.; Murib, M.S.; Serpenguzel, A.

    2016-01-01

    This study investigates the optical resonance spectra of free-standing monolithic single crystal silicon microspheres immersed in various amorphous fluids, such as air, water, ethylene glycol, and 4-Cyano-4’-pentylbiphenyl nematic liquid crystal. For the various amorphous fluids,

  9. Silicon-Light: a European FP7 Project Aiming at High Efficiency Thin Film Silicon Solar Cells on Foil

    DEFF Research Database (Denmark)

    Soppe, W.; Haug, F.-J.; Couty, P.

    2011-01-01

    Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: a) advanced light trapping by implementing nanotexturization through UV Nano...... calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils...... with nanotexture is shown. Microcrystalline and amorphous silicon single junction cells with stable efficiencies with more than 8 % have been made, paving the way towards a-Si/ c-Si tandem cells with more than 11% efficiency....

  10. Electron beam recrystallization of amorphous semiconductor materials

    Science.gov (United States)

    Evans, J. C., Jr.

    1968-01-01

    Nucleation and growth of crystalline films of silicon, germanium, and cadmium sulfide on substrates of plastic and glass were investigated. Amorphous films of germanium, silicon, and cadmium sulfide on amorphous substrates of glass and plastic were converted to the crystalline condition by electron bombardment.

  11. Carrier transport in amorphous silicon utilizing picosecond photoconductivity

    Science.gov (United States)

    Johnson, A. M.

    1981-08-01

    The development of a high-speed electronic measurement capability permitted the direct observation of the transient photoresponse of amorphous silicon (a-Si) with a time resolution of approximately 10ps. This technique was used to measure the initial mobility of photogenerated (2.1eV) free carriers in three types of a-Si having widely different densities of structural defects (i.e., as prepared by: (1) RF glow discharge (a-Si:H); (2) chemical vapor deposition; and (3) evaporation in ultra-high vacuum). In all three types of a-Si, the same initial mobility of approximately 1 cu cm/Vs at room temperature was found. This result tends to confirm the often-made suggestion that the free carrier mobility is determined by the influence of shallow states associated with the disorder in the random atomic network, and is an intrinsic property of a-Si which is unaffected by the method of preparation. The rate of decay of the photocurrent correlates with the density of structural defects and varies from 4ps to 200ps for the three types of a-Si investigated. The initial mobility of a-Si:H was found to be thermally activated. The possible application of extended state transport controlled by multiple trapping and small polaron formation is discussed.

  12. Laminated Amorphous Silicon Neutron Detector (pre-print)

    International Nuclear Information System (INIS)

    McHugh, Harry; Branz, Howard; Stradins, Paul; Xu, Yueqin

    2009-01-01

    An internal R and D project was conducted at the Special Technologies Laboratory (STL) of National Security Technologies, LLC (NSTec), to determine the feasibility of developing a multi-layer boron-10 based thermal neutron detector using the amorphous silicon (AS) technology currently employed in the manufacture of liquid crystal displays. The boron-10 neutron reaction produces an alpha that can be readily detected. A single layer detector, limited to an approximately 2-micron-thick layer of boron, has a theoretical sensitivity of about 3%; hence a thin multi-layer device with high sensitivity can theoretically be manufactured from single layer detectors. Working with National Renewable Energy Laboratory (NREL), an AS PiN diode alpha detector was developed and tested. The PiN diode was deposited on a boron-10 coated substrate. Testing confirmed that the neutron sensitivity was nearly equal to the theoretical value of 3%. However, adhesion problems with the boron-10 coating prevented successful development of a prototype detector. Future efforts will include boron deposition work and development of integrated AS signal processing circuitry.

  13. Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics.

    Science.gov (United States)

    Johlin, Eric; Al-Obeidi, Ahmed; Nogay, Gizem; Stuckelberger, Michael; Buonassisi, Tonio; Grossman, Jeffrey C

    2016-06-22

    While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improved hole collection in thick absorber layers. This is achieved by etching an array of 150 nm diameter holes into intrinsic a-Si:H and then coating the structured material with p-type a-Si:H and a conformal zinc oxide transparent conducting layer. The inclusion of these nanoholes yields relative power conversion efficiency (PCE) increases of ∼45%, from 7.2 to 10.4% PCE for small area devices. Comparisons of optical properties, time-of-flight mobility measurements, and internal quantum efficiency spectra indicate this efficiency is indeed likely occurring from an improved collection pathway provided by the nanostructuring of the devices. Finally, we estimate that through modest optimizations of the design and fabrication, PCEs of beyond 13% should be obtainable for similar devices.

  14. Diffusion of Gold and Platinum in Amorphous Silicon

    CERN Multimedia

    Voss, T L

    2002-01-01

    By means of radiotracer experiments the diffusion of Au and Pt in radio-frequency-sputtered amorphous silicon (a-Si) was investigated. Specimens of a-Si with homogeneous doping concentrations of Au or Pt in the range 0$\\, - \\,$1,7~at.\\% were produced by co-sputtering of Si and Au or Pt, respectively. An additional tiny concentration of radioactive $^{195}$Au or $^{188}$Pt, about 10~at.ppm, was implanted at ISOLDE. The resulting Gaussian distribution of the implanted atoms served as a probe for measuring diffusion coefficients at various doping concentrations. It was found that for a given doping concentration the diffusion coefficients show Arrhenius-type temperature dependences, where the diffusion enthalpy and the pre-exponential factor depend on the doping concentration. From these results it was concluded that in a-Si Au and Pt undergo direct, interstitial-like diffusion that is retarded by temporary trapping of the radiotracer atoms at vacancy-type defects with different binding enthalpies. In the case o...

  15. Experiment and Simulation Study on the Amorphous Silicon Photovoltaic Walls

    Directory of Open Access Journals (Sweden)

    Wenjie Zhang

    2014-01-01

    Full Text Available Based on comparative study on two amorphous silicon photovoltaic walls (a-Si PV walls, the temperature distribution and the instant power were tested; and with EnergyPlus software, similar models of the walls were built to simulate annual power generation and air conditioning load. On typical sunshine day, the corresponding position temperature of nonventilated PV wall was generally 0.5~1.5°C higher than that of ventilated one, while the power generation was 0.2%~0.4% lower, which was consistent with the simulation results with a difference of 0.41% in annual energy output. As simulation results, in summer, comparing the PV walls with normal wall, the heat per unit area of these two photovoltaic walls was 5.25 kWh/m2 (nonventilated and 0.67 kWh/m2 (ventilated higher, respectively. But in winter the heat loss of nonventilated one was smaller, while ventilated PV wall was similar to normal wall. To annual energy consumption of heating and cooling, the building with ventilated PV wall and normal wall was also similar but slightly better than nonventilated one. Therefore, it is inferred that, at low latitudes, such as Zhuhai, China, air gap ventilation is suitable, while the length to thickness ratio of the air gap needs to be taken into account.

  16. Bonding topologies in diamondlike amorphous-carbon films

    International Nuclear Information System (INIS)

    Siegal, M. P.; Provencio, P. N.; Tallant, D. R.; Simpson, R. L.; Kleinsorge, B.; Milne, W. I.

    2000-01-01

    The carbon ion energy used during filtered cathodic vacuum arc deposition determines the bonding topologies of amorphous-carbon (a-C) films. Regions of relatively low density occur near the substrate/film and film/surface interfaces; their thicknesses increase with deposition energy. The ion subplantation growth results in mass density gradients in the bulk portion of a-C in the growth direction; density decreases with distance from the substrate for films grown using ion energies 160 eV. Films grown between these energies are the most diamondlike with relatively uniform bulk density and the highest optical transparencies. Bonding topologies evolve with increasing growth energy consistent with the propagation of subplanted carbon ions inducing a partial transformation of σ- to π-bonded carbon atoms. (c) 2000 American Institute of Physics

  17. Heat treatment of cathodic arc deposited amorphous hard carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Anders, S.; Ager, J.W. III; Brown, I.G. [and others

    1997-02-01

    Amorphous hard carbon films of varying sp{sup 2}/sp{sup 3} fractions have been deposited on Si using filtered cathodic are deposition with pulsed biasing. The films were heat treated in air up to 550 C. Raman investigation and nanoindentation were performed to study the modification of the films caused by the heat treatment. It was found that films containing a high sp{sup 3} fraction sustain their hardness for temperatures at least up to 400 C, their structure for temperatures up to 500 C, and show a low thickness loss during heat treatment. Films containing at low sp{sup 3} fraction graphitize during the heat treatment, show changes in structure and hardness, and a considerable thickness loss.

  18. Nanocomposite metal amorphous-carbon thin films deposited by hybrid PVD and PECVD technique.

    Science.gov (United States)

    Teixeira, V; Soares, P; Martins, A J; Carneiro, J; Cerqueira, F

    2009-07-01

    Carbon based films can combine the properties of solid lubricating graphite structure and hard diamond crystal structure, i.e., high hardness, chemical inertness, high thermal conductivity and optical transparency without the crystalline structure of diamond. Issues of fundamental importance associated with nanocarbon coatings are reducing stress, improving adhesion and compatibility with substrates. In this work new nanocomposite coatings with improved toughness based in nanocrystalline phases of metals and ceramics embedded in amorphous carbon matrix are being developed within the frame of a research project: nc-MeNxCy/a-C(Me) with Me = Mo, Si, Al, Ti, etc. Carbide forming metal/carbon (Me/C) composite films with Me = Mo, W or Ti possess appropriate properties to overcome the limitation of pure DLC films. These novel coating architectures will be adopted with the objective to decrease residual stress, improve adherence and fracture toughness, obtain low friction coefficient and high wear-resistance. Nanocomposite DLC's films were deposited by hybrid technique using a PVD-Physically Vapor Deposition (magnetron sputtering) and Plasma Enhanced Chemical Vapor Deposition (PECVD), by the use of CH4 gas. The parameters varied were: deposition time, substrate temperature (180 degrees C) and dopant (Si + Mo) of the amorphous carbon matrix. All the depositions were made on silicon wafers and steel substrates precoated with a silicon inter-layer. The characterisation of the film's physico-mechanical properties will be presented in order to understand the influence of the deposition parameters and metal content used within the a-C matrix in the thin film properties. Film microstructure and film hybridization state was characterized by Raman Spectroscopy. In order to characterize morphology SEM and AFM will be used. Film composition was measured by Energy-Dispersive X-ray analysis (EDS) and by X-ray photoelectron spectroscopy (XPS). The contact angle for the produced DLC's on

  19. LUMINESCENCE AND THERMAL ANNEALING OF SPUTTERED DEPOSITED THULIUM- AND SAMARIUM-DOPED AMORPHOUS AlN FILMS

    OpenAIRE

    MUHAMMAD MAQBOOL

    2005-01-01

    Thin films of thulium- and samarium-doped AlN are deposited on silicon (111) substrates at 77 K by RF magnetron sputtering method. 200–400 nm thick films are grown at 100–200 watts RF power and 5–8 mTorr nitrogen, using a metal target of Al with Tm and Sm separately. X-rays diffraction results show that films are amorphous. Cathodoluminescence studies are performed at room temperature and two dominant peaks are observed in Tm at 467 nm from 1D2 → 3F4 transition and 480 nm from 1G4 to the grou...

  20. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  1. Unipolar resistive switching behaviors in amorphous lutetium oxide films

    Science.gov (United States)

    Gao, Xu; Xia, Yidong; Xu, Bo; Kong, Jizhou; Guo, Hongxuan; Li, Kui; Li, Haitao; Xu, Hanni; Chen, Kai; Yin, Jiang; Liu, Zhiguo

    2010-10-01

    The resistive switching properties in the amorphous Lu2O3 films deposited by pulsed laser deposition have been investigated. Well unipolar switching behaviors of Pt/Lu2O3/Pt stacks were obtained. The memory cells exhibited a high resistance ratio over 1×103, fast programming speed within 30 ns, and no obvious degradation after an endurance of 300 switching cycles and a duration of 3.2×106 s. The first-principles calculation indicates that the oxygen vacancies in cubic Lu2O3 will form defective energy level below the bottom of conduction band, and reduce the band gap. The absence of grain boundaries in the amorphous Lu2O3 films helps us attribute the switching mechanism of such stacks to the possible redistribution of defects related to oxygen vacancies along the filamentary paths during the resistive switching process.

  2. Thermal grafting of fluorinated molecular monolayers on doped amorphous silicon surfaces

    International Nuclear Information System (INIS)

    Sabbah, H.; Zebda, A.; Ababou-Girard, S.; Solal, F.; Godet, C.; Conde, J. P.; Chu, V.

    2009-01-01

    Thermally induced (160-300 deg. C) gas phase grafting of linear alkene molecules (perfluorodecene) was performed on hydrogenated amorphous silicon (a-Si:H) films, either nominally undoped or doped with different boron and phosphorus concentrations. Dense and smooth a-Si:H films were grown using plasma decomposition of silane. Quantitative analysis of in situ x-ray photoelectron spectroscopy indicates the grafting of a single layer of organic molecules. The hydrophobic properties of perfluorodecene-modified surfaces were studied as a function of surface coverage. Annealing experiments in ultrahigh vacuum show the covalent binding and the thermal stability of these immobilized layers up to 370 deg. C; this temperature corresponds to the Si-C bond cleavage temperature. In contrast with hydrogenated crystalline Si(111):H, no heavy wet chemistry surface preparation is required for thermal grafting of alkene molecules on a-Si:H films. A threshold grafting temperature is observed, with a strong dependence on the doping level which produces a large contrast in the molecular coverage for grafting performed at 230 deg. C

  3. Nonlinear Optical Functions in Crystalline and Amorphous Silicon-on-Insulator Nanowires

    DEFF Research Database (Denmark)

    Baets, R.; Kuyken, B.; Liu, X.

    2012-01-01

    Silicon-on-Insulator nanowires provide an excellent platform for nonlinear optical functions in spite of the two-photon absorption at telecom wavelengths. Work on both crystalline and amorphous silicon nanowires is reviewed, in the wavelength range of 1.5 to 2.5 µm....

  4. Microcrystalline silicon films and solar cells investigatet by photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Merdzhanova, T.

    2005-07-01

    A systematic investigation on photoluminescence (PL) properties of microcrystalline silicon ({mu}c-Si:H) films with structural composition changing from highly crystalline to predominantly amorphous is presented. The samples were prepared by PECVD and HWCVD with different silane concentration in hydrogen (SC). By using photoluminescence in combination with Raman spectroscopy the relationship between electronic properties and the microstructure of the material is studied. The PL spectra of {mu}c-Si:H reveal a rather broad ({proportional_to}0.13 eV) featureless band at about 1 eV ('{mu}c'-Si-band). In mixed phase material of crystalline and amorphous regions, a band at about 1.3 eV with halfwidth of about 0.3 eV is found in addition to '{mu}c'-Si-band, which is attributed to the amorphous phase ('a'-Si-band). Similarly to amorphous silicon, the '{mu}c'-Si-band is assigned to recombination between electrons and holes in band tail states. An additional PL band centred at about 0.7 eV with halfwidth slightly broader than the '{mu}c'-Si-band is observed only for films prepared at high substrate temperature and it is preliminarily assigned to defect-related transitions as in polycrystalline silicon. With decreasing crystalline volume fraction, the '{mu}c'-Si-band shifts continuously to higher energies for all {mu}c-Si:H films but the linewidth of the PL spectra is almost unaffected. This is valid for all deposition conditions investigated. The results are interpreted, assuming decrease of the density of band tail states with decreasing crystalline volume fraction. A simple model is proposed to simulate PL spectra and V{sub oc} in {mu}c-Si:H solar cells as a function of temperature, based on carrier distributions in quasi-equilibrium conditions. In the model is assumed symmetric density of states distributions for electrons and holes in the conduction and the valence band tail states. The best agreement between

  5. Improved p–n heterojunction device performance induced by irradiation in amorphous boron carbide films

    Energy Technology Data Exchange (ETDEWEB)

    Peterson, George [Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68583-0857 (United States); Su, Qing [Nebraska Center for Energy Sciences Research, University of Nebraska-Lincoln, Lincoln, NE 68583-0857 (United States); Wang, Yongqiang [Materials Science and Technology Division, Los Alamos National Laboratory, PO Box 1663, Los Alamos, NM 87545 (United States); Dowben, Peter A. [Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0298 (United States); Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588-0299 (United States); Nastasi, Michael, E-mail: mnastasi2@unl.edu [Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68583-0857 (United States); Nebraska Center for Energy Sciences Research, University of Nebraska-Lincoln, Lincoln, NE 68583-0857 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0298 (United States)

    2015-12-15

    Highlights: • Amorphous boron carbide films were grown on n-type silicon creating a heterojunction. • We irradiated the devices with 200 keV alpha particles to varying levels of damage. • We measured the current versus voltage at each level of damage for the device. • The electrical properties improved with moderate amounts of irradiation. • Device failure is due to the fragility of the Si, not the boron carbide film. - Abstract: Amorphous hydrogenated boron carbide films (a-B{sub 10}C{sub 2+x}:H{sub y}) on Si p–n heterojunctions were fabricated utilizing plasma enhanced chemical vapor deposition (PECVD). These devices were found to be robust when irradiated with 200 keV He{sup +} ions. For low doses of irradiation, contrary to most other electrical devices, the electrical performance improved. On the heterojunction I(V) curve, reverse bias leakage current decreased by 3 orders of magnitude, series resistance across the device decreased by 64%, and saturation current due to generation of electron–hole pairs in the depletion region also decreased by an order of magnitude. It is believed that the improvements in the electrical properties of the devices are due to an initial passivation of defects in the a-B{sub 10}C{sub 2+x}:H{sub y} film resulting from electronic energy deposition, breaking bonds and allowing them to reform in a lower energy state, or resolving distorted icosahedron anion states.

  6. Elemental distribution in fluorinated amorphous carbon thin films.

    Science.gov (United States)

    Lamperti, A; Bottani, C E; Ossi, P M

    2005-01-01

    Focused ion beam-secondary ion mass spectrometry (FIB-SIMS) with 20 nm spatial resolution has been used to analyze amorphous fluorinated carbon thin films, deposited by plasma assisted chemical vapor deposition (PACVD), at micro- to nano-scale. Mass spectra and ion imaging of film surface were acquired and the presence and distribution of contaminants were investigated. Surface images show the secondary ion distribution for F(-), CH(-), CF(-). A change in size and topology of fluorine-rich areas is correlated with film hardness and with microstructure transition from diamond-like to polymer-like, as indicated by infrared and Raman spectroscopies. Based on the surface distributions of CF(-) and CH(-) and on the vibrational spectroscopy results, a mechanism of fluorine substitution for hydrogen and an attempt to explain the film structure and microstructure is proposed.

  7. Atomistic modeling of ion beam induced amorphization in silicon

    International Nuclear Information System (INIS)

    Pelaz, Lourdes; Marques, Luis A.; Lopez, Pedro; Santos, Ivan; Aboy, Maria; Barbolla, Juan

    2005-01-01

    Ion beam induced amorphization in Si has attracted significant interest since the beginning of the use of ion implantation for the fabrication of Si devices. Nowadays, a renewed interest in the modeling of amorphization mechanisms at atomic level has arisen due to the use of preamorphizing implants and high dopant implantation doses for the fabrication of nanometric-scale Si devices. In this work, we briefly describe the existing phenomenological and defect-based amorphization models. We focus on the atomistic model we have developed to describe ion beam induced amorphization in Si. In our model, the building block for the amorphous phase is the bond defect or IV pair, whose stability increases with the number of surrounding IV pairs. This feature explains the regrowth behavior of different damage topologies and the kinetics of the crystalline to amorphous transition. The model provides excellent quantitative agreement with experimental results

  8. A study of the chemical, mechanical, and surface properties of thin films of hydrogenated amorphous carbon

    Energy Technology Data Exchange (ETDEWEB)

    Vandentop, G.J.

    1990-07-01

    Amorphous hydrogenated carbon (a-C:H) films were studied with the objective of elucidating the nucleation and growth mechanisms, and the origin of their unique physical properties. The films were deposited onto Si(100) substrates both on the powered (negatively self-biased) and on the grounded electrodes from methane in an rf plasma (13.56 MHz) at 65 mTorr and 300 to 370 K. The films produced at the powered electrode exhibited superior mechanical properties, such as high hardness. A mass spectrometer was used to identify neutral species and positive ions incident on the electrodes from the plasma, and also to measure ion energies. The effect of varying ion energy flux on the properties of a-C:H films was investigated using a novel pulsed biasing technique. It was demonstrated that ions were not the dominant deposition species as the total ion flux measured was insufficient to account for the observed deposition rate. The interface between thin films of a-C:H and silicon substrates was investigated using angle resolved x-ray photoelectron spectroscopy. A silicon carbide layer was detected at the interface of a hard a-C:H film formed at the powered electrode. At the grounded electrode, where the kinetic energy is low, no interfacial carbide layer was observed. Scanning tunneling microscopy and high energy electron energy loss spectroscopy was used to investigate the initial stages of growth of a-C:H films. On graphite substrates, films formed at the powered electrode were observed to nucleate in clusters approximately 50 {Angstrom} in diameter, while at the grounded electrode no cluster formation was observed. 58 figs.

  9. Imaging and thickness measurement of amorphous intergranular films using TEM

    International Nuclear Information System (INIS)

    MacLaren, I.

    2004-01-01

    Fresnel fringe analysis is shown to be unreliable for grain boundaries in yttrium-doped alumina: the determined thicknesses do not agree well with those measured from high resolution transmission electron microscopy (HRTEM), the asymmetry between under- and overfocus is very large, and Fresnel fringes are sometimes shown at boundaries which contain no amorphous film. An alternative approach to the analysis of HRTEM images of grain boundary films is demonstrated: Fourier filtering is used to remove the lattice fringes from the image thereby significantly enhancing the visibility of the intergranular films. The apparent film thickness shows a discrepancy between measurements from the original HRTEM image and the filtered image. It was shown that fringe delocalisation and diffuseness of the amorphous/crystalline interfaces will lead to a significant underestimate of the thickness in unprocessed HRTEM images. In contrast to this, the average thickness can be much more accurately measured from the Fourier-filtered image, provided the boundary is oriented accurately edge-on

  10. Amorphous and microcrystalline silicon applied in very thin tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schicho, Sandra

    2011-07-28

    Thin-film solar cells are fabricated by low-cost production processes, and are therefore an alternative to conventionally used wafer solar cells based on crystalline silicon. Due to the different band gaps, tandem cells that consist of amorphous (a-Si:H) and microcrystalline ({mu}c-Si:H) single junction solar cells deposited on top of each other use the solar spectrum much more efficient than single junction solar cells. The silicon layers are usually deposited on TCO (Transparent Conductive Oxide)-coated glass and metal- or plastic foils. Compared to the CdTe and CIGS based thin-film technologies, silicon thin-film solar cells have the advantage that no limitation of raw material supply is expected and no toxic elements are used. Nevertheless, the production cost per Wattpeak is the decisive factor concerning competitiveness and can be reduced by, e.g., shorter deposition times or reduced material consumption. Both cost-reducing conceptions are simultaneously achieved by reducing the a-Si:H and {mu}c-Si:H absorber layer thicknesses in a tandem device. In the work on hand, the influence of an absorber layer thickness reduction up to 77% on the photovoltaic parameters of a-Si:H/{mu}c-Si:H tandem solar cells was investigated. An industry-oriented Radio Frequency Plasma-Enhanced Chemical Vapour Deposition (RF-PECVD) system was used to deposit the solar cells on glass substrates coated with randomly structured TCO layers. The thicknesses of top and bottom cell absorber layers were varied by adjusting the deposition time. Reduced layer thicknesses lead to lower absorption and, hence, to reduced short-circuit current densities which, however, are partially balanced by higher open-circuit voltages and fill factors. Furthermore, by using very thin amorphous top cells, the light-induced degradation decreases tremendously. Accordingly, a thickness reduction of 75% led to an efficiency loss of only 21 %. By adjusting the parameters for the deposition of a-Si:H top cells, a

  11. Screen-printed carbon electrode modified on its surface with amorphous carbon nitride thin film: Electrochemical and morphological study

    Energy Technology Data Exchange (ETDEWEB)

    Ghamouss, F. [Universite de Nantes, UMR 6006-CNRS, FR-2465-CNRS, Laboratoire d' Analyse isotopique et Electrochimique de Metabolismes (LAIEM) (France); Tessier, P.-Y. [Universite de Nantes, UMR CNRS 6502, Institut des Materiaux Jean Rouxel - IMN Faculte des Sciences and des Techniques de Nantes, 2 rue de la Houssiniere, 44322 Nantes Cedex 3 (France); Djouadi, A. [Universite de Nantes, UMR CNRS 6502, Institut des Materiaux Jean Rouxel - IMN Faculte des Sciences and des Techniques de Nantes, 2 rue de la Houssiniere, 44322 Nantes Cedex 3 (France); Besland, M.-P. [Universite de Nantes, UMR CNRS 6502, Institut des Materiaux Jean Rouxel - IMN Faculte des Sciences and des Techniques de Nantes, 2 rue de la Houssiniere, 44322 Nantes Cedex 3 (France); Boujtita, M. [Universite de Nantes, UMR 6006-CNRS, FR-2465-CNRS, Laboratoire d' Analyse isotopique et Electrochimique de Metabolismes (LAIEM) (France)]. E-mail: mohammed.boujtita@univ-nantes.fr

    2007-04-20

    The surface of a screen-printed carbon electrode (SPCE) was modified by using amorphous carbon nitride (a-CN {sub x}) thin film deposited by reactive magnetron sputtering. Scanning electron microscopy and photoelectron spectroscopy measurements were used to characterise respectively the morphology and the chemical structure of the a-CN {sub x} modified electrodes. The incorporation of nitrogen in the amorphous carbon network was demonstrated by X ray photoelectron spectroscopy. The a-CN {sub x} layers were deposited on both carbon screen-printed electrode (SPCE) and silicon (Si) substrates. A comparative study showed that the nature of substrate, i.e. SPCE and Si, has a significant effect on both the surface morphology of deposited a-CN {sub x} film and their electrochemical properties. The improvement of the electrochemical reactivity of SPCE after a-CN {sub x} film deposition was highlighted both by comparing the shapes of voltammograms and calculating the apparent heterogeneous electron transfer rate constant.

  12. Characterization of nanocrystalline silicon germanium film and ...

    African Journals Online (AJOL)

    The nanocrystalline silicon-germanium films (Si/Ge) and Si/Ge nanotubes have low band gaps and high carrier mobility, thus offering appealing potential for absorbing gas molecules. Interaction between hydrogen molecules and bare as well as functionalized Si/Ge nanofilm and nanotube was investigated using Monte ...

  13. Effect of pyrolysis atmospheres on the morphology of polymer-derived silicon oxynitrocarbide ceramic films coated aluminum nitride surface and the thermal conductivity of silicone rubber composites

    Science.gov (United States)

    Chiu, Hsien T.; Sukachonmakul, Tanapon; Wang, Chen H.; Wattanakul, Karnthidaporn; Kuo, Ming T.; Wang, Yu H.

    2014-02-01

    Amorphous silicon oxycarbide (SiOC) and silicon oxynitrocarbide (SiONC) ceramic films coated aluminum nitride (AlN) were prepared by using preceramic-polysilazane (PSZ) with dip-coating method, followed by pyrolysis at 700 °C in different (air, Ar, N2 and NH3) atmospheres to converted PSZ into SiOCair and SiONC(Ar,N2andNH3) ceramic. The existence of amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface was characterized by FTIR, XRD and XPS. The interfacial adhesion between silicone rubber and AlN was significantly improved after the introduction of amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface. It can be observed from AFM that the pyrolysis of PSZ at different atmosphere strongly affected to films morphology on AlN surface as SiOCair and SiONCNH3 ceramic films were more flat and smooth than SiONCN2 and SiONCAr ceramic films. Besides, the enhancement of the thermal conductivity of silicone rubber composites was found to be related to the decrease in the surface roughness of SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface. This present work provided an alternative surface modification of thermally conductive fillers to improve the thermal conductivity of silicon rubber composites by coating with amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films.

  14. Effect of light trapping in an amorphous silicon solar cell

    International Nuclear Information System (INIS)

    Iftiquar, S.M.; Jung, Juyeon; Park, Hyeongsik; Cho, Jaehyun; Shin, Chonghoon; Park, Jinjoo; Jung, Junhee; Bong, Sungjae; Kim, Sunbo; Yi, Junsin

    2015-01-01

    Light trapping in amorphous silicon based solar cell has been investigated theoretically. The substrate for these cells can be textured, including pyramidally textured c-Si wafer, to improve capture of incident light. A thin silver layer, deposited on the substrate of an n–i–p cell, ultimately goes at the back of the cell structure and can act a back reflector to improve light trapping. The two physical solar cells we investigated had open circuit voltages (V oc ) of 0.87, 0.90 V, short circuit current densities (J sc ) of 14.2, 15.36 mA/cm 2 respectively. The first cell was investigated for the effect on its performance while having and not having light trapping scheme (LT), when thickness of the active layer (d i ) was changed in the range of 100 nm to 800 nm. In both the approaches, for having or not having LT, the short circuit current density increases with d i while the V oc and fill factor, decreases steadily. However, maximum cell efficiency can be obtained when d i = 400 nm, and hence it was considered optimized thickness of the active layer, that was used for further investigation. With the introduction of light trapping to the second cell, it shows a further enhancement in J sc and red response of the external quantum efficiency to 16.6 mA/cm 2 and by 11.1% respectively. Considering multiple passages of light inside the cell, we obtained an improvement in cell efficiency from 9.7% to 10.6%. - Highlights: • A theoretical analysis of light trapping in p–i–n and n–i–p type solar cells • J sc increases and V oc decreases with the increase in i-layer thickness. • Observed optimized thickness of i-layer as 400 nm • J sc improved from 15.4 mA/cm 2 to 16.6 mA/cm 2 due to the light trapping. • Efficiency (η) improved from 9.7% to 10.6% due to better red response of the EQE

  15. Structures and properties of fluorinated amorphous carbon films

    Science.gov (United States)

    Huang, K. P.; Lin, P.; Shih, H. C.

    2004-07-01

    Fluorinated amorphous carbon (a-C:F) films were deposited by radio frequency bias assisted microwave plasma electron cyclotron resonance chemical vapor deposition with tetrafluoromethane (CF4) and acetylene (C2H2) as precursors. The deposition process was performed at two flow ratios R=0.90 and R=0.97, where R=CF4/(CF4+C2H2). The samples were annealed at 300 °C for 30 min. in a N2 atmosphere. Both Fourier transform infrared and electron spectroscopy for chemical analyzer were used to characterize the a-C:F film chemical bond and fluorine concentration, respectively. A high resolution electron energy loss spectrometer was applied to detect the electronic structure. The higher CF4 flow ratio (R=0.97) produced more sp3 linear structure, and it made the a-C:F film smoother and softer. A lifetime of around 0.34 μs and an energy gap of ˜2.75 eV were observed in both the as-deposited and after annealing conditions. The short carriers lifetime in the a-C:F film made the photoluminescence peak blueshift. The annealing changed both the structure and composition of the a-C:F film. The type of fluorocarbon bond and electronic structure characterized the mechanical and physical properties of a-C:F film.

  16. Origins of hole traps in hydrogenated nanocrystalline and amorphous silicon revealed through machine learning

    Science.gov (United States)

    Mueller, Tim; Johlin, Eric; Grossman, Jeffrey C.

    2014-03-01

    Genetic programming is used to identify the structural features most strongly associated with hole traps in hydrogenated nanocrystalline silicon with very low crystalline volume fraction. The genetic programming algorithm reveals that hole traps are most strongly associated with local structures within the amorphous region in which a single hydrogen atom is bound to two silicon atoms (bridge bonds), near fivefold coordinated silicon (floating bonds), or where there is a particularly dense cluster of many silicon atoms. Based on these results, we propose a mechanism by which deep hole traps associated with bridge bonds may contribute to the Staebler-Wronski effect.

  17. Surface modification of aluminum nitride by polysilazane and its polymer-derived amorphous silicon oxycarbide ceramic for the enhancement of thermal conductivity in silicone rubber composite

    Science.gov (United States)

    Chiu, Hsien Tang; Sukachonmakul, Tanapon; Kuo, Ming Tai; Wang, Yu Hsiang; Wattanakul, Karnthidaporn

    2014-02-01

    Polysilazane (PSZ) and its polymer-derived amorphous silicon oxycarbide (SiOC) ceramic were coated on aluminum nitride (AlN) by using a dip-coating method to allow moisture-crosslinking of PSZ on AlN, followed by heat treatment at 700 °C in air to convert PSZ into SiOC on AlN. The results from FTIR, XPS and SEM indicated that the surface of AlN was successfully coated by PSZ and SiOC film. It was found that the introduction of PSZ and SiOC film help improve in the interfacial adhesion between the modified AlN (PSZ/AlN and SiOC/AlN) and silicone rubber lead to the increase in the thermal conductivity of the composites since the thermal boundary resistance at the filler-matrix interface was decreased. However, the introduction of SiOC as an intermediate layer between AlN and silicone rubber could help increase the thermal energy transport at the filler-matrix interface rather than using PSZ. This result was due to the decrease in the surface roughness and thickness of SiOC film after heat treatment at 700 °C in air. Thus, in the present work, a SiOC ceramic coating could provide a new surface modification for the improvement of the interfacial adhesion between the thermally conductive filler and the matrix in which can enhance the thermal conductivity of the composites.

  18. Contributions to the Theory of the Properties of Hydrogenated Amorphous Silicon.

    Science.gov (United States)

    1983-07-21

    isolated gests significant interactions between the four I 35 I 23 THEORETICAL STUDY OF THE HYDROGEN-SATURATED IDEAL... 6605 SI-SI BONED 31(2) --SI...by Spear W.E. ( CICL University of Edinburgh) 467. 52 P8 Theoretical Study of Optical Absorption in Hydrogenated Amorphous Silicon W.E. Pickett...Amorphous and Liquid Semiconductors, ed. W.E. Spear ( CICL Univ. of Edinburgh, 1977), p. 467; P. Viktorovitch, G. Moddel, J. Blake and W. Paul, J. Appl

  19. Incoherent Detection of Ultrasonic Using Thin Film Amorphous Semiconductors.

    Science.gov (United States)

    1979-11-01

    111112.2 3- 11111 1.25 1.4 11___ L 6 hCROCOPY RESOLUIION TESI CHART NAI NAt kHRA Ll I l A LEEL o AFML-TR-79-4170 LE E 3’ 1. Li 0 "" INCOHERENT DETECTION...OF ULTRASONICS USING THIN FILM AMORPHOUS SEMICONDUCTORS A. H. FRANCIS DEPAR TMENT OF CHEMISTRY UNIVERSITY OF MICHIGAN ANN ARBOR, MICHIGAN 48109...Department of Chemistry V AE W U .UMBER University of Michigan Ann Arbor, Michigan 48109 -O.._ It. CONTROLLING OFFICE NAME AND ADDRESS 12+UkAT 0 VM O-e

  20. Preparation and properties of amorphous carbon and hydrocarbon films

    Energy Technology Data Exchange (ETDEWEB)

    Richter, F. (Fachbereich Physik, TU Chemnitz (Germany)); Bewilogua, K. (Fraunhofer-Inst. fuer Schicht- und Oberflaechentechnik, Hamburg (Germany)); Kupfer, H.; Muehling, I.; Rau, B.; Rother, B. (Fachbereich Physik, TU Chemnitz (Germany)); Schumacher, D. (Lehrstuhl fuer Oberflaechenwissenschaft, Univ. Duesseldorf (Germany))

    1992-05-15

    This paper deals with amorphous carbonaceous films deposited by different ion/or plasma assisted methods (cathodic arc evaporation, ion plating, and magnetron sputtering), which show remarkable differences in density, composition and energetic state of the particle fluxes arriving at the substrate surface. The structure of the layers was characterized by electron energy loss spectroscopy, high energy electron diffraction, Raman spectroscopy, and electron microscopy. Moreover, the hardness and mass density of the layers were measured. The three deposition methods are compared with regard to their growth conditions yielding a specific layer structure. (orig.).

  1. Metallic Amorphous Thin Films and Heterostructures with Tunable Magnetic Properties

    OpenAIRE

    Zamani, Atieh

    2015-01-01

    The primary focus of this thesis is to study the effect of doping on magnetic properties in amorphous Fe100−xZrx alloys. Samples with compositions of x = 7,11.6 and 12 at.% were implanted with different concentrations of H. Moreover, the samples with a composition of x = 7 at.% were also implanted with He, B, C and N. Magnetic measurements were performed, using SQUID magnetometry and MOKE, in order to compare the as-grown and the implanted films. The Curie temperature (Tc) increases and the c...

  2. In situ observation of shear-driven amorphization in silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    He, Yang; Zhong, Li; Fan, Feifei; Wang, Chongmin; Zhu, Ting; Mao, Scott X.

    2016-09-19

    Amorphous materials have attracted great interest in the scientific and technological fields. An amorphous solid usually forms under the externally driven conditions of melt-quenching, irradiation and severe mechanical deformation. However, its dynamic formation process remains elusive. Here we report the in situ atomic-scale observation of dynamic amorphization processes during mechanical straining of nanoscale silicon crystals by high resolution transmission electron microscopy (HRTEM). We observe the shear-driven amorphization (SDA) occurring in a dominant shear band. The SDA involves a sequence of processes starting with the shear-induced diamond-cubic to diamond-hexagonal phase transition that is followed by dislocation nucleation and accumulation in the newly formed phase, leading to the formation of amorphous silicon. The SDA formation through diamond-hexagonal phase is rationalized by its structural conformity with the order in the paracrystalline amorphous silicon, which maybe widely applied to diamond-cubic materials. Besides, the activation of SDA is orientation-dependent through the competition between full dislocation nucleation and partial gliding.

  3. On electronic structure of polymer-derived amorphous silicon carbide ceramics

    Science.gov (United States)

    Wang, Kewei; Li, Xuqin; Ma, Baisheng; Wang, Yiguang; Zhang, Ligong; An, Linan

    2014-06-01

    The electronic structure of polymer-derived amorphous silicon carbide ceramics was studied by combining measurements of temperature-dependent conductivity and optical absorption. By comparing the experimental results to theoretical models, electronic structure was constructed for a carbon-rich amorphous silicon carbide, which revealed several unique features, such as deep defect energy level, wide band-tail band, and overlap between the band-tail band and defect level. These unique features were discussed in terms of the microstructure of the material and used to explain the electric behavior.

  4. The multilayered structure of ultrathin amorphous carbon films synthesized by filtered cathodic vacuum arc deposition

    KAUST Repository

    Wang, Na

    2013-08-01

    The structure of ultrathin amorphous carbon (a-C) films synthesized by filtered cathodic vacuum arc (FCVA) deposition was investigated by high-resolution transmission electron microscopy, electron energy loss spectroscopy, and x-ray photoelectron spectroscopy. Results of the plasmon excitation energy shift and through-thickness elemental concentration show a multilayered a-C film structure comprising an interface layer consisting of C, Si, and, possibly, SiC, a buffer layer with continuously increasing sp 3 fraction, a relatively thicker layer (bulk film) of constant sp 3 content, and an ultrathin surface layer rich in sp 2 hybridization. A detailed study of the C K-edge spectrum indicates that the buffer layer between the interface layer and the bulk film is due to the partial backscattering of C+ ions interacting with the heavy atoms of the silicon substrate. The results of this study provide insight into the minimum thickness of a-C films deposited by FCVA under optimum substrate bias conditions. Copyright © 2013 Materials Research Society.

  5. Roof-integrated amorphous silicon photovoltaic installation at the Institute for Micro-Technology; Installation photovoltaique IMT Neuchatel silicium amorphe integre dans toiture

    Energy Technology Data Exchange (ETDEWEB)

    Tscharner, R.; Shah, A.V.

    2003-07-01

    This final report for the Swiss Federal Office of Energy (SFOE) describes the 6.44 kW grid-connected photovoltaic (PV) power plant that has been in operation since 1996 at the Institute for Micro-Technology in Neuchatel, Switzerland. The PV plant, which features large-area, fully integrated modules using amorphous silicon cells was the first of its kind in Switzerland. Experience gained with the installation, which has been fully operational since its construction, as well as the power produced and efficiencies measured are presented and commented. The role of the installation as the forerunner of new, so-called 'micro-morph' thin-film solar cell technology developed at the institute is stressed. Technical details of the plant and its performance are given.

  6. Photoconduction in silicon rich oxide films

    Science.gov (United States)

    Luna-López, J. A.; Aceves-Mijares, M.; Carrillo-López, J.; Morales-Sanchez, A.; Flores-Gracia, F. J.; Garcia-Salgado, G.

    2009-05-01

    Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH4 (silane) and N2O (nitrous oxide) as reactive gases at 700 °. The gas flow ratio, Ro = [N2O]/[SiH4] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to Ro = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies (~3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

  7. Photoconduction in silicon rich oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Luna-Lopez, J A; Carrillo-Lopez, J; Flores-Gracia, F J; Garcia-Salgado, G [CIDS-ICUAP, Benemerita Universidad Autonoma de Puebla. Ed. 103 D and C, col. San Manuel, Puebla, Pue. Mexico 72570 (Mexico); Aceves-Mijares, M; Morales-Sanchez, A, E-mail: jluna@buap.siu.m, E-mail: jluna@inaoep.m [INAOE, Luis Enrique Erro No. 1, Apdo. 51, Tonantzintla, Puebla, Mexico 72000 (Mexico)

    2009-05-01

    Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH{sub 4} (silane) and N{sub 2}O (nitrous oxide) as reactive gases at 700 {sup 0}. The gas flow ratio, Ro = [N{sub 2}O]/[SiH{sub 4}] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to R{sub o} = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies ({approx}3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

  8. Electrodeposition at room temperature of amorphous silicon and germanium nanowires in ionic liquid

    Energy Technology Data Exchange (ETDEWEB)

    Martineau, F; Namur, K; Mallet, J; Delavoie, F; Troyon, M; Molinari, M [Laboratoire de Microscopies et d' Etude de Nanostructures (LMEN EA3799), Universite de Reims Champagne Ardennes (URCA), Reims Cedex 2 (France); Endres, F, E-mail: michael.molinari@univ-reims.fr [Institute of Particle Technology, Chair of Interface Processes, Clausthal University of Technology, D-36678 Clausthal-Zellerfeld (Germany)

    2009-11-15

    The electrodeposition at room temperature of silicon and germanium nanowires from the air- and water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide (P{sub 1,4}) containing SiCl{sub 4} as Si source or GeCl{sub 4} as Ge source is investigated by cyclic voltammetry. By using nanoporous polycarbonate membranes as templates, it is possible to reproducibly grow pure silicon and germanium nanowires of different diameters. The nanowires are composed of pure amorphous silicon or germanium. The nanowires have homogeneous cylindrical shape with a roughness of a few nanometres on the wire surfaces. The nanowires' diameters and lengths well match with the initial membrane characteristics. Preliminary photoluminescence experiments exhibit strong emission in the near infrared for the amorphous silicon nanowires.

  9. Amorphous silicon oxide layers for surface passivation and contacting of heterostructure solar cells of amorphous and crystalline silicon; Amorphe Siliziumoxidschichten zur Oberflaechenpassivierung und Kontaktierung von Heterostruktur-Solarzellen aus amorphen und kristallinem Silizium

    Energy Technology Data Exchange (ETDEWEB)

    Einsele, Florian

    2010-02-05

    Atomic hydrogen plays a dominant role in the passivation of crystalline silicon surfaces by layers of amorphous silicon. In order to research into this role, this thesis presents the method of hydrogen effusion from thin amorphous films of silicon (a-Si:H) and silicon oxide (a-SiO{sub x}:H). The oxygen concentration of the sub-stoichiometric a-SiO{sub x}:H films ranges up to 10 at.-%. The effusion experiment yields information about the content and thermal stability of hydrogen and about the microstructure of the films. A mathematical description of the diffusion process of atomic hydrogen yields an analytical expression of the effusion rate R{sub E} depending on the linearly increasing temperature in the experiment. Fitting of the calculated effusion rates R{sub E} to measured effusion spectra yields the diffusion coefficient of atomic hydrogen in a-SiO{sub x}:H. With increasing oxygen concentration, the diffusion coefficient of hydrogen in the a-SiO{sub x}:H films decreases. This is attributed to an increasing Si-H bond energy due to back bonded oxygen, resulting in a higher stability of hydrogen in the films. This result is confirmed by an increasing thermal stability of the p-type c-Si passivation with a-SiO{sub x}:H of increasing oxygen concentrations up to 5 at.-%. The passivation reaches very low recombination velocities of S < 10 cm/s at the interface. However, for higher oxygen concentrations up to 10 at.-%, the passivation quality decreases significantly. Here, infrared spectroscopy of Si-H vibrational modes and hydrogen effusion show an increase of hydrogen-rich interconnected voids in the films. This microstructure results in a high amount of molecular hydrogen (H{sub 2}) in the layers, which is not suitable for the saturation of c-Si interface defects. Annealing of the films at temperatures around 400 C leads to a release of H{sub 2} from the voids, as a result of which Si-Si bonds in the material reconstruct. Subsequently, hydrogen migration in the

  10. Nitrided FeB amorphous thin films for magneto mechanical systems

    International Nuclear Information System (INIS)

    Fernandez-Martinez, I.; Martin-Gonzalez, M.S.; Gonzalez-Arrabal, R.; Alvarez-Sanchez, R.; Briones, F.; Costa-Kraemer, J.L.

    2008-01-01

    The structural, magnetic and magnetoelastic properties of Fe-B-N amorphous films, sputtered from a Fe 80 B 20 target, in a mixture of argon and nitrogen gas, are studied for different nitrogen partial pressures. Nitrogen incorporates into the film preserving the amorphous structure, and modifying magnetic properties. The amount of nitrogen that incorporates into the amorphous structure is found to scale linearly with the nitrogen partial pressure during film growth. The structure, magnetization, field evolution, magnetic anisotropy and magnetostrictive behaviour are determined for films with different nitrogen content. An ∼20% increase of both the saturation magnetization and the magnetostriction constant values is found for moderate (∼8%) nitrogen content when compared to those for pure Fe 80 B 20 amorphous films. These improved properties, together with the still low coercivity of the amorphous films offer great potential for their use in magnetostrictive micro and nano magneto mechanical actuator devices

  11. Nitrided FeB amorphous thin films for magneto mechanical systems

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez-Martinez, I.; Martin-Gonzalez, M.S. [Instituto de Microelectronica de Madrid, IMM-CNM-CSIC, Isaac Newton 8 PTM, 28760 Tres Cantos, Madrid (Spain); Gonzalez-Arrabal, R. [Instituto de Microelectronica de Madrid, IMM-CNM-CSIC, Isaac Newton 8 PTM, 28760 Tres Cantos, Madrid (Spain); Centro de Microanalisis de Materiales de Materiales, Universidad Autonoma de Madrid, Cantoblanco 28049, Madrid (Spain); Alvarez-Sanchez, R.; Briones, F. [Instituto de Microelectronica de Madrid, IMM-CNM-CSIC, Isaac Newton 8 PTM, 28760 Tres Cantos, Madrid (Spain); Costa-Kraemer, J.L. [Instituto de Microelectronica de Madrid, IMM-CNM-CSIC, Isaac Newton 8 PTM, 28760 Tres Cantos, Madrid (Spain)], E-mail: kramer@imm.cnm.csic.es

    2008-01-15

    The structural, magnetic and magnetoelastic properties of Fe-B-N amorphous films, sputtered from a Fe{sub 80}B{sub 20} target, in a mixture of argon and nitrogen gas, are studied for different nitrogen partial pressures. Nitrogen incorporates into the film preserving the amorphous structure, and modifying magnetic properties. The amount of nitrogen that incorporates into the amorphous structure is found to scale linearly with the nitrogen partial pressure during film growth. The structure, magnetization, field evolution, magnetic anisotropy and magnetostrictive behaviour are determined for films with different nitrogen content. An {approx}20% increase of both the saturation magnetization and the magnetostriction constant values is found for moderate ({approx}8%) nitrogen content when compared to those for pure Fe{sub 80}B{sub 20} amorphous films. These improved properties, together with the still low coercivity of the amorphous films offer great potential for their use in magnetostrictive micro and nano magneto mechanical actuator devices.

  12. Microstructure of amorphous-silicon-based solar cell materials by small-angle x-ray scattering. Annual subcontract report, 6 April 1994--5 April 1995

    Energy Technology Data Exchange (ETDEWEB)

    Williamson, D.L. [Colorado School of Mines, Golden, CO (United States)

    1995-08-01

    The general objective of this research is to provide detailed microstructural information on the amorphous-silicon-based, thin-film materials under development for improved multijunction solar cells. The experimental technique used is small-angle x-ray scattering (SAXS) providing microstructural data on microvoid fractions, sizes, shapes, and their preferred orientations. Other microstructural features such as alloy segregation, hydrogen-rich clusters and alloy short-range order are probed.

  13. Preparation and Characterisation of Amorphous-silicon Photovoltaic Devices Having Microcrystalline Emitters; Preparacion y Caracterizacion de Dispositivos Fotovoltaicos de Silicio Amorfo con Emisiones Microcristalinos

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, M. T.; Gandia, J. J.; Carabe, J. [CIEMAT. Madrid (Spain)

    1999-11-01

    The present work summarises the essential aspects of the research carried out so far at CIEMAT on amorphous-silicon solar cells. The experience accumulated on the preparation and characterisation of amorphous and microcrystalline silicon has allowed to start from intrinsic (absorbent) and p-and n-type (emitters) materials not only having excellent optoelectronic properties, but enjoying certain technological advantages with respect to those developed by other groups. Among these are absorbent-layer growth rates between 5 and 10 times as fast as conventional ones and microcrystalline emitters prepared without using hydrogen. The preparation of amorphous-silicon cells has required the solution of a number of problems, such as those related to pinholes, edge leak currents and diffusion of metals into the semiconductor. Once such constraints have been overcome, it has been demonstrated not only that the amorphous-silicon technology developed at CIEMAT is valid for making solar cells, but also that the quality of the semiconductor material is good for the application according to the partial results obtained. The development of thin-film laser-scribing technology is considered essential. Additionally it has been concluded that cross contamination, originated by the fact of using a single-chamber reactor, is the basic factor limiting the quality of the cells developed at CIEMAT. The present research activity is highly focused on the solution of this problem. (Author)

  14. Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D., E-mail: music@mch.rwth-aachen.de; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Bednarcik, J.; Michalikova, J. [Deutsches Elektronen Synchrotron DESY, FS-PE group, Notkestrasse 85, D-22607 Hamburg (Germany)

    2015-01-14

    Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O{sub 2} atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al{sub 2}O{sub 3} formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO{sub 2} at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al{sub 2}O{sub 3} with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds.

  15. Effect of substrate temperature on the structure of amorphous oxygenated hydrocarbon films grown with a pulsed supersonic methane plasma flow

    Energy Technology Data Exchange (ETDEWEB)

    Fedoseeva, Yu. V., E-mail: fedoseeva@niic.nsc.ru [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Pozdnyakov, G.A. [Khristianovich Institute of Theoretical and Applied Mechanics, SB RAS, Novosibirsk 630090 (Russian Federation); Okotrub, A.V.; Kanygin, M.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Nastaushev, Yu. V. [Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Vilkov, O.Y. [St. Petersburg State University, St. Petersburg 198504 (Russian Federation); Bulusheva, L.G. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation)

    2016-11-01

    Highlights: • A deposition of supersonic methane plasma flow on silicon substrate produces amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) film. • The thickness, composition, and wettability of the film depend on the substrate temperature. • A rise of the substrate temperature from 500 to 700 °C promotes the sp{sup 3}-hybridization carbon formation. - Abstract: Since amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) films are promising engineering materials a study of the structure and composition of the films depending on the conditions of synthesis is important for controlling of their physicochemical properties. Here, we used the methods of scanning and transmission electron microscopy, X-ray photoelectron, near-edge X-ray absorption fine structure, Fourier transform infrared and Raman spectroscopy to reveal changes in the chemical connectivity of CO{sub x}H{sub y} films grown on silicon substrates heated to 300, 500, and 700 °C using a supersonic flow of methane plasma. It was found that the CO{sub x}H{sub y} films, deposited at 300 and 500 °C, were mainly composed of the sp{sup 2}-hybridized carbon areas with various oxygen species. A rise of the substrate temperature caused an increase of the portion of tetrahedral carbon atoms as well as carboxyl and hydroxyl groups. With growth of the substrate temperature, the film thickness reduced monotonically from 400 to 180 nm, while the film adhesion improved substantially. The films, deposited at lower temperatures, showed high hydrophilicity due to porosity and presence of oxygenated groups both at the surface and in the bulk.

  16. Effect of silicon and oxygen dopants on the stability of hydrogenated amorphous carbon under harsh environmental conditions

    Energy Technology Data Exchange (ETDEWEB)

    Mangolini, Filippo [Univ. of Texas, Austin, TX (United States); Krick, Brandon A. [Lehigh Univ., Bethlehem, PA (United States); Jacobs, Tevis D. B. [Univ. of Pittsburgh, PA (United States); Khanal, Subarna R. [Univ. of Pittsburgh, PA (United States); Streller, Frank [Univ. of Pennsylvania, Philadelphia, PA (United States); McClimon, J. Brandon [Univ. of Pennsylvania, Philadelphia, PA (United States); Hilbert, James [Univ. of Pennsylvania, Philadelphia, PA (United States); Prasad, Somuri V. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Scharf, Thomas W. [Univ. of North Texas, Denton, TX (United States); Ohlhausen, James A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Lukes, Jennifer R. [Univ. of Pennsylvania, Philadelphia, PA (United States); Sawyer, W. Gregory [Univ. of Florida, Gainesville, FL (United States); Carpick, Robert W. [Univ. of Pennsylvania, Philadelphia, PA (United States)

    2018-04-01

    Harsh environments pose materials durability challenges across the automotive, aerospace, and manufacturing sectors, and beyond. While amorphous carbon materials have been used as coatings in many environmentally-demanding applications owing to their unique mechanical, electrical, and optical properties, their limited thermal stability and high reactivity in oxidizing environments have impeded their use in many technologies. Silicon- and oxygen-containing hydrogenated amorphous carbon (a-C:H:Si:O) films are promising for several applications because of their higher thermal stability and lower residual stress compared to hydrogenated amorphous carbon (a-C:H). However, an understanding of their superior thermo-oxidative stability compared to a-C:H is lacking, as it has been inhibited by the intrinsic challenge of characterizing an amorphous, multi-component material. Here, we show that introducing silicon and oxygen in a-C:H slightly enhances the thermal stability in vacuum, but tremendously increases the thermo-oxidative stability and the resistance to degradation upon exposure to the harsh conditions of low Earth orbit (LEO). The latter is demonstrated by having mounted samples of a-C:H:Si:O on the exterior of the International Space Station via the Materials International Space Station (MISSE) mission 7b. Exposing lightly-doped a-C:H:Si:O to elevated temperatures under aerobic conditions or to LEO causes carbon volatilization in the near-surface region, producing a silica surface layer that protects the underlying carbon from further removal. In conclusion, these findings provide a novel physically-based understanding of the superior stability of a-C:H:Si:O in harsh environments compared to a-C:H.

  17. Photoluminescence enhancement through silicon implantation on SRO-LPCVD films

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Sanchez, A., E-mail: amorales@inaoep.mx [INAOE, Electronics Department, Apartado 51, Puebla 72000 (Mexico); Leyva, K.M.; Aceves, M. [INAOE, Electronics Department, Apartado 51, Puebla 72000 (Mexico); Barreto, J.; Dominguez, C. [Instituto de Microelectronica de Barcelona, IMB-CNM (CSIC), Barcelona (Spain); Luna-Lopez, J.A.; Carrillo, J. [CIDS-BUAP, Apdo. 1651, Puebla 72000 (Mexico); Pedraza, J. [INAOE, Electronics Department, Apartado 51, Puebla 72000 (Mexico)

    2010-10-25

    Photoluminescence (PL) properties of thin and thick silicon-rich oxide (SRO) and silicon implanted SRO (SI-SRO) films with different silicon excess fabricated by low pressure chemical vapor deposition (LPCVD) were studied. The effects of the annealing temperature and silicon implantation on the PL were also studied. Maximum luminescence intensity was observed with an annealing temperature of 1150 and 1100 deg. C for thin and thick SRO films, respectively. The PL intensity is strongly enhanced when SRO films are implanted with silicon, especially for thin SRO films. Thin SI-SRO films emit up to six times more than non-implanted films, meanwhile the PL in thick SI-SRO films is only improved less than two times. Therefore, thin SI-SRO films are an interesting alternative for applications such as the fabrication of efficient Si-nps based LEDs.

  18. Multipoint alignment monitoring with amorphous silicon position detectors in a complex light path

    International Nuclear Information System (INIS)

    Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L.

    2010-01-01

    This document presents an application of the new generation of amorphous silicon position detecting (ASPD) sensors to multipoint alignment. Twelve units are monitored along a 20 m long laser beam, where the light path is deflected by 90 o using a pentaprism.

  19. Results from multipoint alignment monitoring using the new generation of amorphous silicon position detectors

    International Nuclear Information System (INIS)

    Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Sobron, M.; Vila, I.; Virto, A.L.

    2008-01-01

    We present the measured performance of a new generation of large sensitive area (28x28 mm 2 ) semitransparent amorphous silicon position detector sensors. More than 100 units have been characterized. They show a very high performance. To illustrate a multipoint application, we present results from the monitoring of five sensors placed in a 5.5-m-long light path

  20. Amorphous Silicon Position Detectors for the Link Alignment System of the CMS Detector: Users Handbook

    International Nuclear Information System (INIS)

    Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F. J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Scodellaro, L.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

    2007-01-01

    We present the general characteristics, calibration procedures and measured performance of the Amorphous Silicon Position Detectors installed in the Link Alignment System of the CMS Detector for laser beam detection and reconstruction and give the Data Base to be used as a Handbook during CMS operation. (Author) 10 refs

  1. A comparison of degradation in three amorphous silicon PV module technologies

    Energy Technology Data Exchange (ETDEWEB)

    Radue, C.; van Dyk, E.E. [Physics Department, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2010-03-15

    Three commercial amorphous silicon modules manufactured by monolithic integration and consisting of three technology types were analysed in this study. These modules were deployed outdoors for 14 months and underwent degradation. All three modules experienced the typical light-induced degradation (LID) described by the Staebler-Wronski effect, and this was followed by further degradation. A 14 W single junction amorphous silicon module degraded by about 45% of the initial measured maximum power output (P{sub MAX}) at the end of the study. A maximum of 30% of this has been attributed to LID and the further 15% to cell mismatch and cell degradation. The other two modules, a 64 W triple junction amorphous silicon module, and a 68 W flexible triple junction amorphous silicon module, exhibited LID followed by seasonal variation in the degraded P{sub MAX}. The 64 W module showed a maximum degradation in P{sub MAX} of about 22%. This is approximately 4% more than the manufacturer allowed for the initial LID. However, the seasonal variation in P{sub MAX} seems to be centred around the manufacturer's rating ({+-}4%). The 68 W flexible module has shown a maximum decrease in P{sub MAX} of about 27%. This decrease is about 17% greater than the manufacturer allowed for the initial LID. (author)

  2. Amorphous Silicon Position Detectors for the Link Alignment System of the CMS Detector: Users Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F. J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Scodellaro, L.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

    2007-07-01

    We present the general characteristics, calibration procedures and measured performance of the Amorphous Silicon Position Detectors installed in the Link Alignment System of the CMS Detector for laser beam detection and reconstruction and give the Data Base to be used as a Handbook during CMS operation. (Author) 10 refs.

  3. INFLUENCE OF THE SILICON INTERLAYER ON DIAMOND-LIKE CARBON FILMS DEPOSITED ON GLASS SUBSTRATES

    Directory of Open Access Journals (Sweden)

    Deiler Antonio Lima Oliveira

    2012-06-01

    Full Text Available Diamond-like carbon (DLC films as a hard protective coating have achieved great success in a diversity of technological applications. However, adhesion of DLC films to substrates can restrict their applications. The influence of a silicon interlayer in order to improve DLC adhesion on glass substrates was investigated. Amorphous silicon interlayer and DLC films were deposited using plasma enhanced chemical vapor deposition from silane and methane, respectively. The bonding structure, transmittance, refraction index, and adherence of the films were also evaluated regarding the thickness of the silicon interlayer. Raman scattering spectroscopy did not show any substantial difference in DLC structure due to the interlayer thickness of the silicon. Optical measurements showed a sharp decrease of transmittance in the ultra-violet region caused by the fundamental absorption of the light. In addition, the absorption edge of transmittance shifted toward longer wavelength side in the ultra-violet region as the thickness of the silicon interlayer increased. The tribological results showed an increase of DLC adherence as the silicon interlayer increased, which was characterized by less cracks around the grooves.

  4. Structural and electronic characterization of 355 nm laser-crystallized silicon: Interplay of film thickness and laser fluence

    International Nuclear Information System (INIS)

    Semler, Matthew R.; Swenson, Orven F.; Hoey, Justin M.; Guruvenket, Srinivasan; Gette, Cody R.; Hobbie, Erik K.

    2014-01-01

    We present a detailed study of the laser crystallization of amorphous silicon thin films as a function of laser fluence and film thickness. Silicon films grown through plasma-enhanced chemical vapor deposition were subjected to a Q-switched, diode-pumped solid-state laser operating at 355 nm. The crystallinity, morphology, and optical and electronic properties of the films are characterized through transmission and reflectance spectroscopy, resistivity measurements, Raman spectroscopy, X-ray diffraction, atomic force microscopy, and optical and scanning-electron microscopy. Our results reveal a unique surface morphology that strongly couples to the electronic characteristics of the films, with a minimum laser fluence at which the film properties are optimized. A simple scaling model is used to relate film morphology to conductivity in the laser-processed films

  5. Crystalline-Amorphous Core−Shell Silicon Nanowires for High Capacity and High Current Battery Electrodes

    KAUST Repository

    Cui, Li-Feng

    2009-01-14

    Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon\\'s large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline- amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li ions. We demonstrate here that these core-shell nanowires have high charge storage capacity (̃1000 mAh/g, 3 times of carbon) with ̃90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, ̃20 times of carbon at 1 h rate). © 2009 American Chemical Society.

  6. AMORPHOUS SILICON ELECTRONIC STRUCTURE MODELING AND BASIC ELECTRO-PHYSICAL PARAMETERS CALCULATION

    Directory of Open Access Journals (Sweden)

    B. A. Golodenko

    2014-01-01

    Full Text Available Summary. The amorphous semiconductor has any unique processing characteristics and it is perspective material for electronic engineering. However, we have not authentic information about they atomic structure and it is essential knot for execution calculation they electronic states and electro physical properties. The author's methods give to us decision such problem. This method allowed to calculation the amorphous silicon modeling cluster atomics Cartesian coordinates, determined spectrum and density its electronic states and calculation the basics electro physical properties of the modeling cluster. At that determined numerical means of the energy gap, energy Fermi, electron concentration inside valence and conduction band for modeling cluster. The find results provides real ability for purposeful control to type and amorphous semiconductor charge carriers concentration and else provides relation between atomic construction and other amorphous substance physical properties, for example, heat capacity, magnetic susceptibility and other thermodynamic sizes.

  7. Local photoconductivity of microcrystalline silicon thin films measured by conductive atomic force microscopy

    Czech Academy of Sciences Publication Activity Database

    Ledinský, Martin; Fejfar, Antonín; Vetushka, Aliaksi; Stuchlík, Jiří; Rezek, Bohuslav; Kočka, Jan

    2011-01-01

    Roč. 5, 10-11 (2011), s. 373-375 ISSN 1862-6254 R&D Projects: GA MŠk(CZ) LC06040; GA MŠk(CZ) MEB061012; GA AV ČR KAN400100701; GA MŠk LC510 EU Projects: European Commission(XE) 240826 - PolySiMode Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous silicon * nanocrystalline silicon * thin films * atomic force microscopy * photoconductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.218, year: 2011

  8. Ultra low nanowear in novel chromium/amorphous chromium carbide nanocomposite films

    Science.gov (United States)

    Yate, Luis; Martínez-de-Olcoz, Leyre; Esteve, Joan; Lousa, Arturo

    2017-10-01

    In this work, we report the first observation of novel nanocomposite thin films consisting of nanocrystalline chromium embedded in an amorphous chromium carbide matrix (nc-Cr/a-CrC) with relatively high hardness (∼22,3 GPa) and ultra low nanowear. The films were deposited onto silicon substrates using a magnetic filtered cathodic arc deposition system at various negative bias voltages, from 50 to 450 V. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) suggested the co-existence of chromium and chromium carbide phases, while high resolution transmission electron microscopy (HRTEM) confirmed the presence of the nc-Cr/a-CrC structure. The friction coefficient measured with the ball-on disk technique and the nanowear results showed a strong correlation between the macro and nano-tribological properties of the samples. These novel nanocomposite films show promising properties as solid lubricant and wear resistant coatings with relatively high hardness, low friction coefficient and ultra low nanowear.

  9. Dielectric relaxation and hydrogen diffusion in amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, J.C. (AT and T Bell Labs., Murray Hill, NJ (United States))

    1994-04-01

    Hydrogen diffusion is technologically critical to the processing of amorphous Si for solar cell applications. It is shown that this diffusion belongs to a broad class of dielectric relaxation mechanisms which were first studied by Kohlrausch in 1847. A microscopic theory of the Kohlrausch relaxation constant [beta][sub K] is also constructed. This theory explains the values of [beta] observed in many electronic, molecular and polymeric relaxation processes. It is based on two novel concepts: Wiener sausages, from statistical mechanics, and the magic wand, from axiomatic set theory

  10. Crystalline-amorphous core-shell silicon nanowires for high capacity and high current battery electrodes.

    Science.gov (United States)

    Cui, Li-Feng; Ruffo, Riccardo; Chan, Candace K; Peng, Hailin; Cui, Yi

    2009-01-01

    Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon's large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline-amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li(+) ions. We demonstrate here that these core-shell nanowires have high charge storage capacity ( approximately 1000 mAh/g, 3 times of carbon) with approximately 90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, approximately 20 times of carbon at 1 h rate).

  11. An amorphous silicon photodiode with 2 THz gain-bandwidth product based on cycling excitation process

    Science.gov (United States)

    Yan, Lujiang; Yu, Yugang; Zhang, Alex Ce; Hall, David; Niaz, Iftikhar Ahmad; Raihan Miah, Mohammad Abu; Liu, Yu-Hsin; Lo, Yu-Hwa

    2017-09-01

    Since impact ionization was observed in semiconductors over half a century ago, avalanche photodiodes (APDs) using impact ionization in a fashion of chain reaction have been the most sensitive semiconductor photodetectors. However, APDs have relatively high excess noise, a limited gain-bandwidth product, and high operation voltage, presenting a need for alternative signal amplification mechanisms of superior properties. As an amplification mechanism, the cycling excitation process (CEP) was recently reported in a silicon p-n junction with subtle control and balance of the impurity levels and profiles. Realizing that CEP effect depends on Auger excitation involving localized states, we made the counter intuitive hypothesis that disordered materials, such as amorphous silicon, with their abundant localized states, can produce strong CEP effects with high gain and speed at low noise, despite their extremely low mobility and large number of defects. Here, we demonstrate an amorphous silicon low noise photodiode with gain-bandwidth product of over 2 THz, based on a very simple structure. This work will impact a wide range of applications involving optical detection because amorphous silicon, as the primary gain medium, is a low-cost, easy-to-process material that can be formed on many kinds of rigid or flexible substrates.

  12. Effect of varying nitrogen flow rates on the optical properties of amorphous-SiCN thin films

    Science.gov (United States)

    Rahman, Mohd Azam Abdul; Tong, Goh Boon; Mahmood, Mohamad Rusop; Siong, Chiu Wee; Yian, Haw Choon; Rahman, Saadah Abdul

    2016-11-01

    Series of amorphous silicon carbon nitride (a-SiCN) films are synthesized using RF-PECVD technique on glass and silicon substrates from precursor gas of silane, methane and nitrogen. In this work, the change in nitrogen flow rate from 0 sccm to 50 sccm is a mean used to vary the elemental composition and bonding properties which lead to change in optical properties. The films thickness varies between 327 nm to 944 nm. The changes for the stated properties are discussed against the change in the stated nitrogen flow rate. The optical properties are investigated by means of UV-VIS spectroscopy in the wavelength range of 190 nm to 2500 nm. The transmittance of the films at ultra-violet wavelength is found to increases with increase in nitrogen flow rate. The index of refraction, n obtained for SiCN films from transmittance and reflectance measurements is lower compared to SiC films. The films optical band gap increases from 1.74 eV to 2.08 eV before it decreases to 1.89 eV as nitrogen flow rate increases from 0 to 50 sccm. The optical dispersion parameters were determined according to Wemple and Didomenico method.

  13. Transparent conductive oxides for thin-film silicon solar cells

    Science.gov (United States)

    Löffler, J.

    2005-04-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150 º C and 350 º C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the cells

  14. Simulation of the growth dynamics of amorphous and microcrystalline silicon

    OpenAIRE

    Bailat, Julien; Vallat-Sauvain, Evelyne; Vallat, A.; Shah, Arvind

    2008-01-01

    The qualitative description of the major microstructure characteristics of microcrystalline silicon is achieved through a three-dimensional discrete dynamical growth model. The model is based on three fundamental processes that determine surface morphology: (1) random deposition of particles, (2) local relaxation and (3) desorption. In this model, the incoming particle reaching the growing surface takes on a state variable representing a particular way of being incorporated into the material....

  15. Corrosion-resistant amorphous metallic films of Mo49Cr33B18 alloy

    Science.gov (United States)

    Ramesham, R.; Distefano, S.; Fitzgerald, D.; Thakoor, A. P.; Khanna, S. K.

    1987-01-01

    Corrosion-resistant amorphous metallic alloy films of Mo49Cr33B18 with a crystallization temperature of 590 C were deposited onto glass and quartz substrates by magnetron sputter-quench technique. The amorphous nature of the films was confirmed by their diffuse X-ray diffraction patterns. The deposited films are densely packed (zone T) and exhibit low stress and good adhesion to the substrate. Corrosion current of as-deposited coating of MoCrB amorphous metallic alloy is approximately three orders of magnitude less than the corrosion current of 304 stainless steel in 1N H2SO4 solution.

  16. Deposition of nanocryctalline silicon thin films: Effect of total pressure and substrate temperature

    International Nuclear Information System (INIS)

    Baghdad, R.; Benlakehal, D.; Portier, X.; Zellama, K.; Charvet, S.; Sib, J.D.; Clin, M.; Chahed, L.

    2008-01-01

    The structural changes in intrinsic silicon thin films are investigated as a function of the total pressure (2 to 4 Pa) and substrate temperature (room temperature to 200 deg. C). Infrared absorption, Raman spectroscopy and high resolution transmission electron microscopy are applied to characterize the films. The results indicate that the films grown at 2 Pa are completely amorphous, while at 3 and 4 Pa, crystallization occurs at temperature as low as room temperature. These structural changes are well correlated to the variation of the room temperature conductivity, which increases up to about eight orders of magnitude for the nanocrystallized films. A crystalline volume fraction varying from 71 to about 90% is also observed. The growth mechanism of the nanocrystalline films is also discussed in the framework of the reported models

  17. Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiaopu, E-mail: xl6ba@virginia.edu; Ma, Chung T.; Poon, S. Joseph, E-mail: sjp9x@virginia.edu [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Devaraj, Arun [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Spurgeon, Steven R.; Comes, Ryan B. [Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

    2016-01-04

    Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

  18. Boron profiles in doped amorphous-silicon solar cells formed by plasma ion deposition

    International Nuclear Information System (INIS)

    Stoddart, C.T.H.; Hunt, C.P.; Coleman, J.H.

    1979-01-01

    Amorphous silicon p-n junction solar cells of large area (100 cm 2 ) and having a quantum efficiency approaching 100% in the blue region have been prepared by plasma ion-plating, the p layer being formed from diborane and silane gases in a cathode glow-discharge. Surface secondary ion mass spectrometry combined with ion beam etching was found to be a very sensitive method with high in-depth resolution for obtaining the initial boron-silicon profile of the solar cell p-n junction. (author)

  19. Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

    Energy Technology Data Exchange (ETDEWEB)

    Munoz, D. [XaRMAE-Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Diagonal 647, Barcelona 08028 (Spain)], E-mail: delfina@eel.upc.edu; Voz, C.; Blanque, S. [Universitat Politecnica de Catalunya, Grup de Recerca en Micro i Nanotecnologies, Jordi Girona 1-3, Barcelona 08034 (Spain); Ibarz, D.; Bertomeu, J. [XaRMAE-Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Diagonal 647, Barcelona 08028 (Spain); Alcubilla, R. [Universitat Politecnica de Catalunya, Grup de Recerca en Micro i Nanotecnologies, Jordi Girona 1-3, Barcelona 08034 (Spain)

    2009-03-15

    In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances ({rho}{sub c} {approx} 10 m{omega} cm{sup 2}) have been obtained on 2.8 {omega} cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.

  20. Simulation of localized surface plasmon in metallic nanoparticles embedded in amorphous silicon

    Science.gov (United States)

    Fantoni, A.; Fernandes, M.; Vygranenko, Y.; Louro, P.; Vieira, M.; Texeira, D.; Ribeiro, A.; Alegria, E.

    2017-08-01

    We propose the development and realization of a plasmonic structure based on the LSP interaction of metal nanoparticles with an embedding matrix of amorphous silicon. This structure need to be usable as the basis for a sensor device applied in biomedical applications, after proper functionalization with selective antibodies. The final sensor structure needs to be low cost, compact and disposable. The study reported in this paper aims to analyze different materials for nanoparticles and embedding medium composition. Metals of interest for nanoparticles composition are Aluminum, Gold and Alumina. As a preliminary approach to this device, we study in this work the optical properties of metal nanoparticles embedded in an amorphous silicon matrix, as a function of size, aspect-ratio and metal type. Following an analysis based on the exact solution of the Mie theory, experimental measurements realized with arrays of metal nanoparticles are compared with the simulations.

  1. Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

    International Nuclear Information System (INIS)

    Munoz, D.; Voz, C.; Blanque, S.; Ibarz, D.; Bertomeu, J.; Alcubilla, R.

    2009-01-01

    In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances (ρ c ∼ 10 mΩ cm 2 ) have been obtained on 2.8 Ω cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.

  2. Thermal stability of hot-wire deposited amorphous silicon

    CSIR Research Space (South Africa)

    Arendse, CJ

    2006-04-01

    Full Text Available the solar cells may also be exposed to temperature cycling over a wide range of 2. Experimental details The a-Si:H sample was deposited simultaneously on single-side polished <100> crystalline silicon (c-Si) and Corning 7059 substrates by the hot... change in the defect structure is observed, caused by y clustering at 400 -C, caused by the alignment of unterminated , concentration or both. Raman scattering shows evidence that no s upon annealing. ) 92 – 94 www.elsevier.com/locate/tsf nitrogen...

  3. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    Energy Technology Data Exchange (ETDEWEB)

    Jing, Tao [Univ. of California, Berkeley, CA (United States). Dept. of Engineering-Nuclear Engineering

    1995-05-01

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ~20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 {micro}s. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth.

  4. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    International Nuclear Information System (INIS)

    Jing, T.; Lawrence Berkeley Lab., CA

    1995-05-01

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N ∼20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 micros. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth

  5. Large-size high-performance transparent amorphous silicon sensors for laser beam position detection

    International Nuclear Information System (INIS)

    Calderon, A.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto, A.L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Luque, J.M.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Koehler, C.; Lutz, B.; Schubert, M.B.; Werner, J.H.

    2006-01-01

    We present the measured performance of a new generation of semitransparent amorphous silicon position detectors. They have a large sensitive area (30x30mm 2 ) and show good properties such as a high response (about 20mA/W), an intrinsic position resolution better than 3μm, a spatial-point reconstruction precision better than 10μm, deflection angles smaller than 10μrad and a transmission power in the visible and NIR higher than 70%

  6. First Measurements of the Performance of New Semitransparent Amorphous Silicon Sensor Prototypes

    International Nuclear Information System (INIS)

    Calderon, A.; Calvo, E.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J. M.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

    2004-01-01

    We present first results on the performance of a new generation of semitransparent amorphous silicon position detectors having good properties such as an intrinsic position resolution better than 5μm, an spatial point reconstruction precision better than 10 μm, deflection angles smaller than 10μrad and transmission in the visible and NIR higher than 70%. In addition the sensitive area is very large: 30x30 cm 3 . (Author) 10 refs

  7. Results on photon and neutron irradiation of semitransparent amorphous-silicon sensors

    CERN Document Server

    Carabe, J; Ferrando, A; Fuentes, J; Gandia, J J; Josa-Mutuberria, I; Molinero, A; Oller, J C; Arce, P; Calvo, E; Figueroa, C F; García, N; Matorras, F; Rodrigo, T; Vila, I; Virto, A L; Fenyvesi, A; Molnár, J; Sohler, D

    2000-01-01

    Semitransparent amorphous-silicon sensors are basic elements for laser 2D position reconstruction in the CMS multipoint alignment link system. Some of the sensors have to work in a very hard radiation environment. Two different sensor types have been irradiated with /sup 60/Co photons (up to 100 kGy) and fast neutrons (up to 10/sup 15 / cm/sup -2/), and the subsequent change in their performance has been measured. (13 refs).

  8. Three-dimensional amorphous silicon solar cells on periodically ordered ZnO nanocolumns

    Czech Academy of Sciences Publication Activity Database

    Neykova, Neda; Moulin, E.; Campa, A.; Hruška, Karel; Poruba, Aleš; Stückelberger, M.; Haug, F.J.; Topič, M.; Ballif, C.; Vaněček, Milan

    2015-01-01

    Roč. 212, č. 8 (2015), s. 1823-1829 ISSN 1862-6300 R&D Projects: GA MŠk 7E12029; GA ČR(CZ) GA14-05053S EU Projects: European Commission(XE) 283501 - FAST TRACK Institutional support: RVO:68378271 Keywords : amorphous materials * hydrothermal growth * nanostructures * silicon * solar cells * ZnO Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.648, year: 2015

  9. Simulating liquid and amorphous silicon dioxide using real-space pseudopotentials

    Science.gov (United States)

    Kim, Minjung; Khoo, K. H.; Chelikowsky, James R.

    2012-08-01

    We present ab initio molecular dynamics simulations of liquid and amorphous silicon dioxide. The interatomic forces in our simulations are calculated using real-space pseudopotentials, which were constructed using density-functional theory. Our simulations are carried out using Born-Oppenheimer molecular dynamics (i.e., the electronic structure problem is solved by performing fully self-consistent calculations for each time step). Using a subspace filtering iteration technique, we avoid solving the Kohn-Sham eigenvalue with “standard” diagonalization methods. We consider systems with up to 192 atoms (64 SiO2 units) in a periodic supercell for simulations over 20 ps. The liquid and amorphous ensembles are formed by thermally quenching random configurations of silicon and oxygen atoms. We compare our liquid and amorphous simulations with previously performed Car-Parrinello molecular dynamic simulations and with experiment. In particular, we examine the possible formation of two-membered rings, which were not observed in previous simulations using quantum forces. We attribute this difference to a “biased” initial configuration, which inhibits the formation of two-membered rings. We also compare the structural properties of our simulated amorphous systems with neutron diffraction measurements and find good agreement.

  10. MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2014-01-01

    Full Text Available We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc and low fill factor (FF; however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% with Voc=0.86 V, Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2. The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.

  11. Low-energy electron irradiation induced top-surface nanocrystallization of amorphous carbon film

    Science.gov (United States)

    Chen, Cheng; Fan, Xue; Diao, Dongfeng

    2016-10-01

    We report a low-energy electron irradiation method to nanocrystallize the top-surface of amorphous carbon film in electron cyclotron resonance plasma system. The nanostructure evolution of the carbon film as a function of electron irradiation density and time was examined by transmission electron microscope (TEM) and Raman spectroscopy. The results showed that the electron irradiation gave rise to the formation of sp2 nanocrystallites in the film top-surface within 4 nm thickness. The formation of sp2 nanocrystallite was ascribed to the inelastic electron scattering in the top-surface of carbon film. The frictional property of low-energy electron irradiated film was measured by a pin-on-disk tribometer. The sp2 nanocrystallized top-surface induced a lower friction coefficient than that of the original pure amorphous film. This method enables a convenient nanocrystallization of amorphous surface.

  12. Friction and wear measurements of sputtered MoS/sub x/ films amorphized by ion bombardment

    International Nuclear Information System (INIS)

    Mikkelsen, N.J.; Chevallier, J.; Soerensen, G.; Straede, C.A.

    1988-01-01

    The present study presents an experimental evidence for amorphization of rf sputtered MoS/sub x/ films by ion bombardment. Even at low doses (3 x 10 15 ions/cm 2 ) of 400 keV argon ions a complete amorphization was confirmed by x-ray diffraction analysis and transmission electron microscopy. As a result of the ion bombardment the film density increased 100% to almost the bulk value for MoS 2 . The friction coefficient for ion beam amorphized MoS/sub x/ was measured to be 0.04 in agreement with the values reported for crystalline films but disagreeing considerably with the friction coefficient of 0.4 previously reported for amorphous films

  13. On magnetic ordering in silicon made amorphous by ion implantation

    International Nuclear Information System (INIS)

    Khokhlov, A.F.; Mashin, A.N.; Polyakov, S.M.

    1978-01-01

    Temperature dependences of the EPR intensity for silicon irradiated with the neon and argon ions at (2-4)x10 17 cm -2 doses have been studied. Paramagnetic defects with 2.0055 g-factor were recorded. Intensity jump associated with the transformation of the irradiated layer part to ferromagnetic state is observed at approximately 140 K. Paramagnetic centre distributions at temperatures above and lower the magnetic ordering temperature have heen investigated. It has been found, that ferromagnetic ordering is observed in a layer with the defect concentrations (3-7)x10 20 cm -3 , located at a depth > 100 A. Magnetic-ordered layer thickness is proportional to the incident ion energy

  14. Luminescence and Thermal Annealing of Sputtered Deposited - and Samarium-Doped Amorphous AlN Films

    Science.gov (United States)

    Maqbool, Muhammad

    Thin films of thulium- and samarium-doped AlN are deposited on silicon (111) substrates at 77 K by RF magnetron sputtering method. 200-400 nm thick films are grown at 100-200 watts RF power and 5-8 mTorr nitrogen, using a metal target of Al with Tm and Sm separately. X-rays diffraction results show that films are amorphous. Cathodoluminescence studies are performed at room temperature and two dominant peaks are observed in Tm at 467 nm from 1D2 → 3F4 transition and 480 nm from 1G4 to the ground state 3H6 transition. Other peaks in the visible region are obtained at 650 nm and 685 nm due to 1G4 → 3F4 and 1D2 → 3H4 transitions. Peaks in the ultraviolet and infrared region are also obtained at 371 nm and 802 nm as a result from 1D2 → 3H6 and 3H4 → 3H6 transition, respectively. Sm gives four peaks at 564 nm, 600 nm, 648 nm and 707 nm as a result of 4G5/2 → 6H5/2, 4G5/2 → 6H7/2, 4G5/2 → 6H9/2 and 4G5/2 → 6H11/2 transitions. Films are thermally annealed at 1200 K for half an hour in a nitrogen atmosphere. Thermal annealing enhances the intensity of luminescence.

  15. Synchrotron applications of an amorphous silicon flat-panel detector

    International Nuclear Information System (INIS)

    Lee, J. H.; Can Aydiner, C.; Almer, J.; Bernier, J.; Chapman, K. W.; Chupas, P. J.; Haeffner, D.; Kump, K.; Lee, P. L.; Lienert, U.; Miceli, A.; Vera, G.; LANL; GE Healthcare

    2008-01-01

    A GE Revolution 41RT flat-panel detector (GE 41RT) from GE Healthcare (GE) has been in operation at the Advanced Photon Source for over two years. The detector has an active area of 41 cm x 41 cm with 200 (micro)m x 200 (micro)m pixel size. The nominal working photon energy is around 80 keV. The physical set-up and utility software of the detector system are discussed in this article. The linearity of the detector response was measured at 80.7 keV. The memory effect of the detector element, called lag, was also measured at different exposure times and gain settings. The modulation transfer function was measured in terms of the line-spread function using a 25 (micro)m x 1 cm tungsten slit. The background (dark) signal, the signal that the detector will carry without exposure to X-rays, was measured at three different gain settings and with exposure times of 1 ms to 15 s. The radial geometric flatness of the sensor panel was measured using the diffraction pattern from a CeO 2 powder standard. The large active area and fast data-capturing rate, i.e. 8 frames s -1 in radiography mode, 30 frames s -1 in fluoroscopy mode, make the GE 41RT one of a kind and very versatile in synchrotron diffraction. The loading behavior of a Cu/Nb multilayer material is used to demonstrate the use of the detector in a strain-stress experiment. Data from the measurement of various samples, amorphous SiO 2 in particular, are presented to show the detector effectiveness in pair distribution function measurements

  16. Study of hydrogenated amorphous silicon devices under intense electric field: application to nuclear detection

    International Nuclear Information System (INIS)

    Ilie, A.

    1996-01-01

    The goal of this work was the study, development and optimization of hydrogenated amorphous silicon (a-Si:H) devices for use in detection of ionizing radiation in applications connected to the nuclear industry. Thick p-i-n devices, capable of withstanding large electric fields (up to 10 6 V/cm) with small currents (nA/cm 2 ), were proposed and developed. In order to decrease fabrication time, films were made using the 'He diluted' PECVD process and compared to standard a-Si:H films. Aspects connected to specific detector applications as well as to the fundamental physics of a-Si:H were considered: the internal electric field technique, in which the depletion charge was measured as a function of the applied bias voltage; study of the leakage current of p-i-n devices permitted us to demonstrate different regimes: depletion, field-enhanced thermal generation and electronic injection across the p layer. The effect of the electric field on the thermal generation of the carriers was studied considering the Poole-Frenkel and tunneling mechanisms. A model was developed taking under consideration the statistics of the correlated states and electron-phonon coupling. The results suggest that mechanisms not included in the 'standard model' of a Si:h need to be considered, such as defect relaxation, a filed-dependent mobility edge etc...; a new metastable phenomenon, called 'forming', induced by prolonged exposure to a strong electric field, was observed and studied. It is characterized by marked decrease of the leakage current and the detector noise, and increase in the breakdown voltage, as well as an improvement of carrier collection efficiency. This forming process appears to be principally due to an activation of the dopants in the p layer; finally, the capacity of thick p-i-n a Si:H devices to detect ionizing radiation has been evaluated. We show that it is possible, with 20-50 micron thick p-i-n devices, to detect the full spectrum of alpha and beta particles. With an

  17. MgB2 thin films on silicon nitride substrates prepared by an in situ method

    International Nuclear Information System (INIS)

    Monticone, Eugenio; Gandini, Claudio; Portesi, Chiara; Rajteri, Mauro; Bodoardo, Silvia; Penazzi, Nerino; Dellarocca, Valeria; Gonnelli, Renato S

    2004-01-01

    Large-area MgB 2 thin films were deposited on silicon nitride and sapphire substrates by co-deposition of Mg and B. After a post-annealing in Ar atmosphere at temperatures between 773 and 1173 K depending on the substrate, the films showed a critical temperature higher than 35 K with a transition width less than 0.5 K. The x-ray diffraction pattern suggested a c-axis preferential orientation in films deposited on amorphous substrate. The smooth surface and the good structural properties of these MgB 2 films allowed their reproducible patterning by a standard photolithographic process down to dimensions of the order of 10 μm and without a considerable degradation of the superconducting properties

  18. X-ray spectroscopy of electronic structure of amorphous silicon and silicyne

    International Nuclear Information System (INIS)

    Mashin, A.I.; Khokhlov, A.F.; Mashin, N.I.; Domashevskaya, Eh.P.; Terekhov, V.A.

    2001-01-01

    SiK β and SiL 23 emission spectra of crystalline silicon (c-Si), amorphous hydrogenated silicon (α-Si:H) and silicyne have been studied by X-ray and ultrasoft X-ray spectroscopy. It is observed that SiL 23 emission spectra of silicyne displays not two maximums, as it usually observed for the c-Si and α-Si:H, but three ones. The third one is seen at high energies near 95.7 eV, and has an intensity about 75%. An additional maximum in the short- wave part of SiK β emission spectrum is observed. This difference of shapes of X-ray spectra between α-Si:H and silicyne is explained by the presence in silicyne a strong π-component of chemical bonds of a silicon atoms in silicyne [ru

  19. X-ray spectroscopy of electronic structure of amorphous silicon and silicyne

    CERN Document Server

    Mashin, A I; Mashin, N I; Domashevskaya, E P; Terekhov, V A

    2001-01-01

    SiK subbeta and SiL sub 2 sub 3 emission spectra of crystalline silicon (c-Si), amorphous hydrogenated silicon (alpha-Si:H) and silicyne have been studied by X-ray and ultrasoft X-ray spectroscopy. It is observed that SiL sub 2 sub 3 emission spectra of silicyne displays not two maximums, as it usually observed for the c-Si and alpha-Si:H, but three ones. The third one is seen at high energies near 95.7 eV, and has an intensity about 75%. An additional maximum in the short- wave part of SiK subbeta emission spectrum is observed. This difference of shapes of X-ray spectra between alpha-Si:H and silicyne is explained by the presence in silicyne a strong pi-component of chemical bonds of a silicon atoms in silicyne

  20. Radiation resistance of amorphous silicon alloy solar cells

    International Nuclear Information System (INIS)

    Hanak, J.J.; Chen, E.; Myatt, A.; Woodyard, J.R.

    1987-01-01

    The radiation resistance of a-Si alloy solar cells when bombarded by high energy particles is reviewed. The results of investigations of high energy proton radiation resistance of a-Si alloy thin film photovoltaic cells are reported. Irradiations were carried out with 200 keV and 1.00 MeV protons with fluences ranging betweeen 1E11 and 1E15 cm-2. Defect generation and passivation mechanisms were studied using the AM1 conversion efficiency and isochronal anneals. It is concluded that the primary defect generation mechanism results from the knock-on of Si and Ge in the intrinsic layer of the cells. The defect passivation proceeds by the complex annealing of Si and Ge defects and not by the simple migration of hydrogen

  1. Highly stable amorphous zinc tin oxynitride thin film transistors under positive bias stress

    Science.gov (United States)

    Niang, K. M.; Bayer, B. C.; Meyer, J. C.; Flewitt, A. J.

    2017-09-01

    The stability of amorphous zinc tin oxynitride thin film transistors (a-ZTON TFTs) under positive bias stress (PBS) is investigated. Thin films are deposited by remote plasma reactive sputtering and are annealed at 300 °C in air for 1 h, after which films are confirmed to be highly amorphous by transmission electron microscopy. Typical a-ZTON TFTs exhibit a threshold voltage of 2.5 V, a field effect mobility of 3.3 cm2 V-1 s-1, a sub-threshold slope of 0.55 V dec-1, and a switching ratio over 106. Using a thermalization energy analysis, the threshold voltage shift under PBS is analysed. A maximum energy barrier to defect conversion up to 0.91 eV is found, which is significantly greater than that of the ˜0.75 eV energy barrier for amorphous indium gallium zinc oxide and amorphous zinc tin oxide TFTs previously reported. The improved stability of these oxynitride TFTs over amorphous oxide TFTs is explained by the elimination of less stable oxygen vacancies due to the passivation of oxygen vacancies with nitrogen. The higher attempt-to-escape frequency of 108 to 109 s-1 in a-ZTON TFTs compared with 107 s-1 in amorphous oxide semiconductor TFTs, on the other hand, is attributed to the high homogeneity of the amorphous film leading to strong carrier localization in the band tails.

  2. Percolation network in resistive switching devices with the structure of silver/amorphous silicon/p-type silicon

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yanhong; Gao, Ping; Bi, Kaifeng; Peng, Wei [School of Physics and Optoelectronic Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian 116024 (China); Jiang, Xuening; Xu, Hongxia [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian116024 (China)

    2014-01-27

    Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network.

  3. Food applications and the toxicological and nutritional implications of amorphous silicon dioxide.

    Science.gov (United States)

    Villota, R; Hawkes, J G

    1986-01-01

    The chemical and physical characteristics of the different types of amorphous silicon dioxide contribute to the versatility of these compounds in a variety of commercial applications. Traditionally, silicas have had a broad spectra of product usage including such areas as viscosity control agents in inks, paints, corrosion-resistant coatings, etc. and as excipients in pharmaceuticals and cosmetics. In the food industry, the most important application has been as an anticaking agent in powdered mixes, seasonings, and coffee whiteners. However, amorphous silica has multifunctional properties that would allow it to act as a viscosity control agent, emulsion stabilizer, suspension and dispersion agent, desiccant, etc. The utilization of silicas in these potential applications, however, has not been undertaken, partially because of the limited knowledge of their physiochemical interactions with other food components and partially due to their controversial status from a toxicological point of view. The main goal of this review is to compile current information on the incorporation of amorphous silicon dioxide as a highly functional and viable additive in the food processing industry as well as to discuss the most recent toxicological investigations of silica in an attempt to present some of the potential food applications and their concomitant toxicological implications. Some of the more significant differences between various silicas and their surface chemistries are presented to elucidate some of their mechanisms of interaction with food components and other biological systems and to aid in the prediction of their rheological or toxicological behavior.

  4. "Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

    Science.gov (United States)

    Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

    2013-04-01

    During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

  5. Thermal oxidation of Zr–Cu–Al–Ni amorphous metal thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oleksak, R.P.; Hostetler, E.B.; Flynn, B.T. [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97331 (United States); McGlone, J.M.; Landau, N.P.; Wager, J.F. [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331 (United States); Stickle, W.F. [Hewlett-Packard Company, Corvallis, OR 97333 (United States); Herman, G.S., E-mail: greg.herman@oregonstate.edu [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97331 (United States)

    2015-11-30

    The initial stages of thermal oxidation for Zr–Cu–Al–Ni amorphous metal thin films were investigated using X-ray photoelectron spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. The as-deposited films had oxygen incorporated during sputter deposition, which helped to stabilize the amorphous phase. After annealing in air at 300 °C for short times (5 min) this oxygen was found to segregate to the surface or buried interface. Annealing at 300 °C for longer times leads to significant composition variation in both vertical and lateral directions, and formation of a surface oxide layer that consists primarily of Zr and Al oxides. Surface oxide formation was initially limited by back-diffusion of Cu and Ni (< 30 min), and then by outward diffusion of Zr (> 30 min). The oxidation properties are largely consistent with previous observations of Zr–Cu–Al–Ni metallic glasses, however some discrepancies were observed which could be explained by the unique sample geometry of the amorphous metal thin films. - Highlights: • Thermal oxidation of amorphous Zr–Cu–Al–Ni thin films was investigated. • Significant short-range inhomogeneities were observed in the amorphous films. • An accumulation of Cu and Ni occurs at the oxide/metal interface. • Diffusion of Zr was found to limit oxide film growth.

  6. Amorphous iron phase formation in swift heavy ion irradiated electrodeposited iron thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kuzmann, E. [Research Group for Nuclear Methods in Structural Chemistry, Department of Nulear Chemistry, Hungarian Academy of Sciences, Eoetvoes University, Budapest (Hungary)]. E-mail: kuzmann@ludens.elte.hu; Stichleutner, S. [Research Group for Nuclear Methods in Structural Chemistry, Department of Nulear Chemistry, Hungarian Academy of Sciences, Eoetvoes University, Budapest (Hungary); Havancsak, K. [Department of Solid State Physics, Eoetvoes University, Budapest (Hungary); El-Sharif, M.R. [Glasgow Caledonian University, Glasgow Scotland (United Kingdom); Chisholm, C.U. [Glasgow Caledonian University, Glasgow Scotland (United Kingdom); Doyle, O. [Glasgow Caledonian University, Glasgow Scotland (United Kingdom); Skuratov, V. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Kellner, K. [Johannes Kepler University Linz (Austria); Dora, Gy. [Research Group for Nuclear Methods in Structural Chemistry, Department of Nulear Chemistry, Hungarian Academy of Sciences, Eoetvoes University, Budapest (Hungary); Homonnay, Z. [Research Group for Nuclear Methods in Structural Chemistry, Department of Nulear Chemistry, Hungarian Academy of Sciences, Eoetvoes University, Budapest (Hungary); Vertes, A. [Research Group for Nuclear Methods in Structural Chemistry, Department of Nulear Chemistry, Hungarian Academy of Sciences, Eoetvoes University, Budapest (Hungary)

    2006-07-15

    {sup 57}Fe conversion electron Moessbauer spectroscopy, SEM, EDAX, XRD and AFM measurements were used to study the radiation effect of 246 MeV Kr ions on electrochemically deposited {sup 57}Fe thin films. Amorphous iron phase formation has been shown to occur for the first time in electrodeposited iron thin films due to the irradiation with swift heavy ions.

  7. Low-energy electron irradiation induced top-surface nanocrystallization of amorphous carbon film

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Cheng [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China); Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Fan, Xue, E-mail: fanx@szu.edu.cn [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China); Diao, Dongfeng, E-mail: dfdiao@szu.edu.cn [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China)

    2016-10-30

    Graphical abstract: Low-energy electron irradiation was proposed to nanocrystallize the top-surface of the as-deposited amorphous carbon film, and sp{sup 2} nanocrystallites formed in the film top-surface within 4 nm thickness. Display Omitted - Abstract: We report a low-energy electron irradiation method to nanocrystallize the top-surface of amorphous carbon film in electron cyclotron resonance plasma system. The nanostructure evolution of the carbon film as a function of electron irradiation density and time was examined by transmission electron microscope (TEM) and Raman spectroscopy. The results showed that the electron irradiation gave rise to the formation of sp{sup 2} nanocrystallites in the film top-surface within 4 nm thickness. The formation of sp{sup 2} nanocrystallite was ascribed to the inelastic electron scattering in the top-surface of carbon film. The frictional property of low-energy electron irradiated film was measured by a pin-on-disk tribometer. The sp{sup 2} nanocrystallized top-surface induced a lower friction coefficient than that of the original pure amorphous film. This method enables a convenient nanocrystallization of amorphous surface.

  8. Structural and chemical characterization of nanocrystalline and amorphous hydrogenated Si films

    Energy Technology Data Exchange (ETDEWEB)

    Garozzo, Cristina; Puglisi, Rosaria Anna; Lombardo, Salvatore [Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi, Ottava Strada 5, Zona Industriale, 95121 Catania (Italy)

    2012-10-15

    We present a study on the morphological evolution of hydrogenated amorphous silicon layers obtained by plasma enhanced chemical vapor deposition at different H dilutions in the regime close to the formation of the nanocrystalline (nc-Si) phase. The role of hydrogen in the transition from the amorphous to the crystalline phase is investigated by accurate structural and chemical characterisation, from the early stages of nucleation, where the nuclei present a size slightly larger than the critical nucleus, i.e. about 0.8 nm in radius, up to the formation of crystalline grains larger than 30 nm in radius. Hydrogen is found to have a crucial role in the transition from a-Si:H to nc-Si:H, since it forms an intermediate bond-centred Si-H-Si configuration, and when the H moves away from the bond-centred location, the strained Si-Si bonds either break or relax, undergoing local structural rearrangements closer to those of c-Si. During this phase transition a part of H bonds at grain boundaries. A correlation between the structural characteristics of the crystalline phase and the bonding mechanism of Si with H through multiple hydrides, such as Si-H{sup 2} and Si-H{sup 3} is found. Particularly the SiH{sup 3} are found to be directly correlated to the shape and the size of the nanocrystallites present in the films (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Present status of amorphous In–Ga–Zn–O thin-film transistors

    Directory of Open Access Journals (Sweden)

    Toshio Kamiya, Kenji Nomura and Hideo Hosono

    2010-01-01

    Full Text Available The present status and recent research results on amorphous oxide semiconductors (AOSs and their thin-film transistors (TFTs are reviewed. AOSs represented by amorphous In–Ga–Zn–O (a-IGZO are expected to be the channel material of TFTs in next-generation flat-panel displays because a-IGZO TFTs satisfy almost all the requirements for organic light-emitting-diode displays, large and fast liquid crystal and three-dimensional (3D displays, which cannot be satisfied using conventional silicon and organic TFTs. The major insights of this review are summarized as follows. (i Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs. (ii A sixth-generation (6G process is demonstrated for 32'' and 37'' displays. (iii An 8G sputtering apparatus and a sputtering target have been developed. (iv The important effect of deep subgap states on illumination instability is revealed. (v Illumination instability under negative bias has been intensively studied, and some mechanisms are proposed. (vi Degradation mechanisms are classified into back-channel effects, the creation of traps at an interface and in the gate insulator, and the creation of donor states in annealed a-IGZO TFTs by the Joule heating; the creation of bulk defects should also be considered in the case of unannealed a-IGZO TFTs. (vii Dense passivation layers improve the stability and photoresponse and are necessary for practical applications. (viii Sufficient knowledge of electronic structures and electron transport in a-IGZO has been accumulated to construct device simulation models.

  10. Thermal expansion coefficient measurement from electron diffraction of amorphous films in a TEM.

    Science.gov (United States)

    Hayashida, Misa; Cui, Kai; Malac, Marek; Egerton, Ray

    2018-05-01

    We measured the linear thermal expansion coefficients of amorphous 5-30 nm thick SiN and 17 nm thick Formvar/Carbon (F/C) films using electron diffraction in a transmission electron microscope. Positive thermal expansion coefficient (TEC) was observed in SiN but negative coefficients in the F/C films. In case of amorphous carbon (aC) films, we could not measure TEC because the diffraction radii required several hours to stabilize at a fixed temperature. Crown Copyright © 2018. Published by Elsevier B.V. All rights reserved.

  11. Amorphous and Crystalline Vanadium Oxides as High-Energy and High-Power Cathodes for Three-Dimensional Thin-Film Lithium Ion Batteries.

    Science.gov (United States)

    Mattelaer, Felix; Geryl, Kobe; Rampelberg, Geert; Dendooven, Jolien; Detavernier, Christophe

    2017-04-19

    Flexible wearable electronics and on-chip energy storage for wireless sensors drive rechargeable batteries toward thin-film lithium ion batteries. To enable more charge storage on a given surface, higher energy density materials are required, while faster energy storage and release can be obtained by going to thinner films. Vanadium oxides have been examined as cathodes in classical and thin-film lithium ion batteries for decades, but amorphous vanadium oxide thin films have been mostly discarded. Here, we investigate the use of atomic layer deposition, which enables electrode deposition on complex three-dimensional (3D) battery architectures, to obtain both amorphous and crystalline VO 2 and V 2 O 5 , and we evaluate their thin-film cathode performance. Very high volumetric capacities are found, alongside excellent kinetics and good cycling stability. Better kinetics and higher volumetric capacities were observed for the amorphous vanadium oxides compared to their crystalline counterparts. The conformal deposition of these vanadium oxides on silicon micropillar structures is demonstrated. This study shows the promising potential of these atomic layer deposited vanadium oxides as cathodes for 3D all-solid-state thin-film lithium ion batteries.

  12. Light management in thin-film silicon solar cells

    NARCIS (Netherlands)

    Isabella, O.

    2013-01-01

    Solar energy can fulfil mankind’s energy needs and secure a more balanced distribution of primary sources of energy. Wafer-based and thin-film silicon solar cells dominate todays’ photovoltaic market because silicon is a non-toxic and abundant material and high conversion efficiencies are achieved

  13. Deposition of silicon films in presence of nitrogen plasma— A ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. A design, development and validation work of plasma based 'activated reactive evaporation (ARE) system' is implemented for the deposition of the silicon films in presence of nitrogen plasma on substrate maintained at room temperature. This plasma based deposition system involves evaporation of pure silicon by.

  14. Opto-electrical properties of amorphous carbon thin film deposited from natural precursor camphor

    Energy Technology Data Exchange (ETDEWEB)

    Pradhan, Debabrata [Department of Chemistry, Indian Institute of Technology Bombay, Mumbai 400 076 (India)]. E-mail: dpradhan@sciborg.uwaterloo.ca; Sharon, Maheshwar [Department of Chemistry, Indian Institute of Technology Bombay, Mumbai 400 076 (India)

    2007-06-30

    A simple thermal chemical vapor deposition technique is employed for the pyrolysis of a natural precursor 'camphor' and deposition of carbon films on alumina substrate at higher temperatures (600-900 deg. C). X-ray diffraction measurement reveals the amorphous structure of these films. The carbon films properties are found to significantly vary with the deposition temperatures. At higher deposition temperature, films have shown predominately sp{sup 2}-bonded carbon and therefore, higher conductivity and lower optical band gap (Tauc gap). These amorphous carbon (a-C) films are also characterized with Raman and X-ray photoelectron spectroscopy. In addition, electrical and optical properties are measured. The thermoelectric measurement shows these as-grown a-C films are p-type in nature.

  15. Nonlinear properties of and nonlinear processing in hydrogenated amorphous silicon waveguides

    DEFF Research Database (Denmark)

    Kuyken, B.; Ji, Hua; Clemmen, S.

    2011-01-01

    We propose hydrogenated amorphous silicon nanowires as a platform for nonlinear optics in the telecommunication wavelength range. Extraction of the nonlinear parameter of these photonic nanowires reveals a figure of merit larger than 2. It is observed that the nonlinear optical properties...... of these waveguides degrade with time, but that this degradation can be reversed by annealing the samples. A four wave mixing conversion efficiency of + 12 dB is demonstrated in a 320 Gbit/s serial optical waveform data sampling experiment in a 4 mm long photonic nanowire....

  16. Large Size High Performance Transparent Amorphous Silicon Sensors for Laser Beam Position Detection and Monitoring

    International Nuclear Information System (INIS)

    Calderon, A.; Martinez Rivero, C.; Matorras, F.; Rodrigo, T.; Sobron, M.; Vila, I.; Virto; Alberdi, J.; Arce, P.; Barcala, J. M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Luque, J. M.; Molinero, A.; Navarrete, J.; Oller, J. C.; Kohler, C.; Lutz, B.; Schubert, M. B.

    2006-01-01

    We present the measured performance of a new generation of semitransparente amorphous silicon position detectors. They have a large sensitive area (30 x 30 mm2) and show good properties such as a high response (about 20 mA/W), an intinsic position resolution better than 3 m, a spatial point reconstruction precision better than 10 m, deflection angles smaller than 10 rad and a transmission power in the visible and NIR higher than 70%. In addition, multipoint alignment monitoring, using up to five sensors lined along a light path of about 5 meters, can be achieved with a resolution better than 20m. (Author)

  17. Serially Connected Micro Amorphous Silicon Solar Cells for Compact High-Voltage Sources

    OpenAIRE

    Nam, Jiyoon; Lee, Youngjoo; Kim, Chang Su; Kim, Hogyoung; Kim, Dong-Ho; Jo, Sungjin

    2016-01-01

    We demonstrate a compact amorphous silicon (a-Si) solar module to be used as high-voltage power supply. In comparison with the organic solar module, the main advantages of the a-Si solar module are its compatibility with photolithography techniques and relatively high power conversion efficiency. The open circuit voltage of a-Si solar cells can be easily controlled by serially interconnecting a-Si solar cells. Moreover, the a-Si solar module can be easily patterned by photolithography in any ...

  18. Structural, dynamical, and electronic properties of amorphous silicon: An ab initio molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Car, R.; Parrinello, M.

    1988-01-18

    An amorphous silicon structure is obtained with a computer simulation based on a new molecular-dynamics technique in which the interatomic potential is derived from a parameter-free quantum mechanical method. Our results for the atomic structure, the phonon spectrum, and the electronic properties are in excellent agreement with experiment. In addition we study details of the microscopic dynamics which are not directly accessible to experiment. We find in particular that structural defects are associated with weak bonds. These may give rise to low-frequency vibrational modes.

  19. On the temperature dependence of the photoconductivity of amorphous silicon nitride (a-Si Nx: H)

    International Nuclear Information System (INIS)

    Tessler, L.R.; Alvarez, F.; Chambouleyron, I.

    1984-01-01

    Experimental results on the photoconducticity of amorphous hydrogenated silicon nitride a-SiNx: H prepared from plasma decomposition of a gaseus mixture of silane and nitrogen ([Si H 4 ]/[N 2 ] ∼ 0.33) are presented. The material is deposited in a capacitively coupled glow discharge system and nitrogen content was continuously increased by increasing the RF power dissipated in the plasma. Studies of the photocurrent as a function of temperature as a function of temperature and lig ht intensities are reported. (Author) [pt

  20. The reversal of light-induced degradation in amorphous silicon solar cells by an electric field

    Energy Technology Data Exchange (ETDEWEB)

    Carlson, D.E.; Rajan, K. [Solarex, a Business Unit of Amoco/Enron Solar, Newtown, Pennsylvania 19840 (United States)

    1997-04-01

    A strong electric field has been shown to reverse the light-induced degradation of amorphous silicon solar cells while exposed to intense illumination at moderate temperatures. The rate of reversal increases with temperature, illumination intensity, and with the strength of the reverse bias field. The reversal process exhibits an activation energy on the order of 0.9 eV and can be increased by the trapping of either electrons or holes in the presence of a strong electric field. {copyright} {ital 1997 American Institute of Physics.}

  1. Role of current profiles and atomic force microscope tips on local electric crystallization of amorphous silicon

    Czech Academy of Sciences Publication Activity Database

    Verveniotis, Elisseos; Rezek, Bohuslav; Šípek, Emil; Stuchlík, Jiří; Kočka, Jan

    2010-01-01

    Roč. 518, č. 21 (2010), s. 5965-5970 ISSN 0040-6090 R&D Projects: GA ČR GD202/09/H041; GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous materials * atomic force microscopy (AFM) * conductivity * crystallization * nanostructures * silicon * nickel Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.909, year: 2010

  2. Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

    Science.gov (United States)

    Saci, Lynda; Mahamdi, Ramdane; Mansour, Farida; Boucher, Jonathan; Collet, Maéva; Bedel Pereira, Eléna; Temple-Boyer, Pierre

    2011-05-01

    The present paper studies the boron (B) diffusion in nitrogen (N) doped amorphous silicon (a-Si) layer in original bi-layer B-doped polycrystalline silicon (poly-Si)/in-situ N-doped Si layers (NIDOS) thin films deposited by low pressure chemical vapor deposition (LPCVD) technique. The B diffusion in the NIDOS layer was investigated by secondary ion mass spectrometry (SIMS) and Fourier transform infrared spectroscopy (FTIR) analysis. A new extended diffusion model is proposed to fit the SIMS profile of the bi-layer films. This model introduces new terms which take into account the effect of N concentration on the complex diffusion phenomena of B atoms in bi-layer films. SIMS results show that B diffusion does not exceed one third of NIDOS layer thickness after annealing. The reduction of the B diffusion in the NIDOS layer is due to the formation of complex B-N as shown by infrared absorption measurements. Electrical measurements using four-probe and Hall effect techniques show the good conductivity of the B-doped poly-Si layer after annealing treatment.

  3. Spectro-ellipsometric studies of sputtered amorphous Titanium dioxide thin films: simultaneous determination of refractive index, extinction coefficient, and void distribution

    CERN Document Server

    Lee, S I; Oh, S G

    1999-01-01

    Amorphous titanium dioxide thin films were deposited onto silicon substrates by using RF magnetron sputtering, and the index of refraction, the extinction coefficient, and the void distribution of these films were simultaneously determined from the analyses of there ellipsometric spectra. In particular, our novel strategy, which combines the merits of multi-sample fitting, the dual dispersion function, and grid search, was proven successful in determining optical constants over a wide energy range, including the energy region where the extinction coefficient was large. Moreover, we found that the void distribution was dependent on the deposition conditions, such as the sputtering power, the substrate temperature, and the substrate surface.

  4. Optical Properties Of As-Deposited Amorphous Carbon Film Fromvarious Substrate Temperaturesvia Custom-Made-CVD

    Directory of Open Access Journals (Sweden)

    A. Ishak

    2015-01-01

    Full Text Available Abstract We were deposited the as-deposited amorphous carbon via a modified custom-made-CVD in the range of 350oC to 550oC at atmospheric pressure with constant of negative bias -40V and argon gas for 1 hour deposition. We used vaporized of palm oil as a carbon source into the chamber. It was observed above 90 of light were transmitted to the samples instead of sample 500oC 80. The as-deposited thin film grown on glass and p-type silicon we found uniform smooth dark grey colored and thickness in the range of 155 to 190nm. It was found thickness less than 170nm brought less significant impact to the reduction of transmission percentage. In relationship with structural image in FESEM the absorption coefficient was found high as the size of particles were big rough and agglomerated. The result showed the optical band gaps for 550oC to 350oC were 0.5eV 1.3eV 0.1eV 0.7eV and 1.4eV respectively. The optical band gaps of 400oC and 350oC were suitable for solar cell applications.

  5. Structure of ion-plated amorphous hydrogenated carbon films investigated by electron energy loss spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Muehling, I.; Bewilogua, K.; Breuer, K. (Sektion Physik/Elektronische Bauelemente, Technische Univ., Karl-Marx-Stadt (German Democratic Republic))

    1990-05-15

    Thin ion-plated amorphous hydrogenated carbon films were investigated by electron energy loss spectroscopy. From an analysis of the dielectric function, information on the film structure could be obtained. The results will be compared with those of electron diffraction studies. Differences between insulating and conducting substrates could be verified in the film structure and are related to surface charging effects. From an analysis of the oscillator strength sum rule the content of C sp{sup 2} atoms was estimated. (orig.).

  6. Hydrogenated amorphous silicon nitride photonic crystals for improved-performance surface electromagnetic wave biosensors.

    Science.gov (United States)

    Sinibaldi, Alberto; Descrovi, Emiliano; Giorgis, Fabrizio; Dominici, Lorenzo; Ballarini, Mirko; Mandracci, Pietro; Danz, Norbert; Michelotti, Francesco

    2012-10-01

    We exploit the properties of surface electromagnetic waves propagating at the surface of finite one dimensional photonic crystals to improve the performance of optical biosensors with respect to the standard surface plasmon resonance approach. We demonstrate that the hydrogenated amorphous silicon nitride technology is a versatile platform for fabricating one dimensional photonic crystals with any desirable design and operating in a wide wavelength range, from the visible to the near infrared. We prepared sensors based on photonic crystals sustaining either guided modes or surface electromagnetic waves, also known as Bloch surface waves. We carried out for the first time a direct experimental comparison of their sensitivity and figure of merit with surface plasmon polaritons on metal layers, by making use of a commercial surface plasmon resonance instrument that was slightly adapted for the experiments. Our measurements demonstrate that the Bloch surface waves on silicon nitride photonic crystals outperform surface plasmon polaritons by a factor 1.3 in terms of figure of merit.

  7. Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications

    Science.gov (United States)

    García, Héctor; Castán, Helena; Dueñas, Salvador; Bailón, Luis; García-Hernansanz, Rodrigo; Olea, Javier; del Prado, Álvaro; Mártil, Ignacio

    2016-07-01

    A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100-150 °C) might be the best choice.

  8. Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride

    Directory of Open Access Journals (Sweden)

    Buiculescu Raluca

    2011-01-01

    Full Text Available Abstract The electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride is studied by measuring the voltage and temperature dependences of the current. The microstructure of the network is investigated by cross-sectional transmission electron microscopy. The multi-walled carbon nanotube network has an uniform spatial extension in the silicon nitride matrix. The current-voltage and resistance-temperature characteristics are both linear, proving the metallic behavior of the network. The I-V curves present oscillations that are further analyzed by computing the conductance-voltage characteristics. The conductance presents minima and maxima that appear at the same voltage for both bias polarities, at both 20 and 298 K, and that are not periodic. These oscillations are interpreted as due to percolation processes. The voltage percolation thresholds are identified with the conductance minima.

  9. Characterization of silicon oxynitride films prepared by the simultaneous implantation of oxygen and nitrogen ions into silicon

    International Nuclear Information System (INIS)

    Hezel, R.; Streb, W.

    1985-01-01

    Silicon oxynitride films about 5 nm in thickness were prepared by simultaneously implanting 5 keV oxygen and nitrogen ions into silicon at room temperature up to saturation. These films with concentrations ranging from pure silicon oxide to silicon nitride were characterized using Auger electron spectroscopy, electron energy loss spectroscopy and depth-concentration profiling. The different behaviour of the silicon oxynitride films compared with those of silicon oxide and silicon nitride with regard to thermal stability and hardness against electron and argon ion irradiation is pointed out. (Auth.)

  10. Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide

    Science.gov (United States)

    Mota-Santiago, P.; Vazquez, H.; Bierschenk, T.; Kremer, F.; Nadzri, A.; Schauries, D.; Djurabekova, F.; Nordlund, K.; Trautmann, C.; Mudie, S.; Ridgway, M. C.; Kluth, P.

    2018-04-01

    The cylindrical nanoscale density variations resulting from the interaction of 185 MeV and 2.2 GeV Au ions with 1.0 μm thick amorphous SiN x :H and SiO x :H layers are determined using small angle x-ray scattering measurements. The resulting density profiles resembles an under-dense core surrounded by an over-dense shell with a smooth transition between the two regions, consistent with molecular-dynamics simulations. For amorphous SiN x :H, the density variations show a radius of 4.2 nm with a relative density change three times larger than the value determined for amorphous SiO x :H, with a radius of 5.5 nm. Complementary infrared spectroscopy measurements exhibit a damage cross-section comparable to the core dimensions. The morphology of the density variations results from freezing in the local viscous flow arising from the non-uniform temperature profile in the radial direction of the ion path. The concomitant drop in viscosity mediated by the thermal conductivity appears to be the main driving force rather than the presence of a density anomaly.

  11. Optical Characterization of Amorphous Hydrogenated Carbon (a-C:H) Thin Films Prepared by Single RF Plasma Method

    Science.gov (United States)

    Dogan, Mansuroglu; Kadir, Goksen; Sinan, Bilikmen

    2015-06-01

    Methane (CH4) plasma was used to produce amorphous hydrogenated carbon (a-C:H) films by a single capacitively coupled radio frequency (RF) powered plasma system. The system consists of two parallel electrodes: the upper electrode is connected to 13.56 MHz RF power and the lower one is connected to the ground. Thin films were deposited on glass slides with different sizes and on silicon wafers. The influence of the plasma species on film characteristics was studied by changing the plasma parameters. The changes of plasma species during the deposition were investigated by optical emission spectroscopy (OES). The structural and optical properties were analyzed via Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD) and UV-visible spectroscopy, and the thicknesses of the samples were measured by a profilometer. The sp3/sp2 ratio and the existing H atoms play a significant role in the determination of the chemical properties of thin films in the plasma. The film quality and deposition rate were both increased by raising the power and the flow rate.

  12. Recrystallization behaviour and electrical properties of germanium ion implanted polycrystalline silicon films

    International Nuclear Information System (INIS)

    Kang, Myeon-Koo; Matsui, Takayuki; Kuwano, Hiroshi

    1996-01-01

    The recrystallization behaviour of undoped and phosphorus-doped polycrystalline silicon films amorphized by germanium ion implantation at doses ranging from 1 x 10 15 to 1 x 10 16 cm -2 are investigated, and the electrical properties of phosphorus-doped films after recrystallization are studied. The phosphorus doping concentration ranges from 3 x 10 18 to 1 x 10 20 cm -3 . It is found that the nucleation rate decreases for undoped films and increases for phosphorus-doped films with increasing germanium dose; the growth rates decrease for both doped and undoped films. The decrease in nucleation rate is caused by the increase in implantation damage. The decrease in growth rate is considered to be due to the increase in lattice strain. The grain size increases with germanium dose for undoped films, but decreases for phosphorus-doped films. The dependence of the electrical properties of the recrystallized films as a function of phosphorus doping concentration with different germanium doses can be explained in terms of the grain size, crystallinity and grain boundary barrier height. (Author)

  13. Electron microscopy study of Ni induced crystallization in amorphous Si thin films

    Energy Technology Data Exchange (ETDEWEB)

    Radnóczi, G. Z.; Battistig, G.; Pécz, B., E-mail: pecz.bela@ttk.mta.hu [Institute for Technical Physics and Matl. Sci., Research Centre for Natural Sciences, Hungarian Academy of Sciences, 1121 Budapest, Konkoly-Thege u. 29-33 (Hungary); Dodony, E. [Institute for Technical Physics and Matl. Sci., Research Centre for Natural Sciences, Hungarian Academy of Sciences, 1121 Budapest, Konkoly-Thege u. 29-33, Hungary and Doctoral School of Physics at Eötvös Loránd University, 1117 (Hungary); Vouroutzis, N.; Stoemenos, J.; Frangis, N. [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Kovács, A. [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Peter Grünberg Institute, Forschungszentrum Jülich, D-52425 (Germany)

    2015-02-17

    The crystallization of amorphous silicon is studied by transmission electron microscopy. The effect of Ni on the crystallization is studied in a wide temperature range heating thinned samples in-situ inside the microscope. Two cases of limited Ni source and unlimited Ni source are studied and compared. NiSi{sub 2} phase started to form at a temperature as low as 250°C in the limited Ni source case. In-situ observation gives a clear view on the crystallization of silicon through small NiSi{sub 2} grain formation. The same phase is observed at the crystallization front in the unlimited Ni source case, where a second region is also observed with large grains of Ni{sub 3}Si{sub 2}. Low temperature experiments show, that long annealing of amorphous silicon at 410 °C already results in large crystallized Si regions due to the Ni induced crystallization.

  14. Electron microscopy study of Ni induced crystallization in amorphous Si thin films

    International Nuclear Information System (INIS)

    Radnóczi, G. Z.; Battistig, G.; Pécz, B.; Dodony, E.; Vouroutzis, N.; Stoemenos, J.; Frangis, N.; Kovács, A.

    2015-01-01

    The crystallization of amorphous silicon is studied by transmission electron microscopy. The effect of Ni on the crystallization is studied in a wide temperature range heating thinned samples in-situ inside the microscope. Two cases of limited Ni source and unlimited Ni source are studied and compared. NiSi 2 phase started to form at a temperature as low as 250°C in the limited Ni source case. In-situ observation gives a clear view on the crystallization of silicon through small NiSi 2 grain formation. The same phase is observed at the crystallization front in the unlimited Ni source case, where a second region is also observed with large grains of Ni 3 Si 2 . Low temperature experiments show, that long annealing of amorphous silicon at 410 °C already results in large crystallized Si regions due to the Ni induced crystallization

  15. Amorphous silicon crystallization by laser. Report of the experiments at Frascati (Project Foto); Cristallizzazione di silicio amorfo via laser. Rapporto degli esperimenti a frascati (Progetto Foto)

    Energy Technology Data Exchange (ETDEWEB)

    Bollanti, S.; Di Lazzaro, P.; Murra, D. [ENEA, Centro Ricerche Frascati, Frascati, RM (Italy). Div. Fisica Applicata; Imparato, A.; Privato, C. [ENEA, Centro Ricerche Portici, Naples (Italy). Div. Fonti Rinnovabili; Carluccio, R.; Fortunato, G.; Mariucci, L.; Pecora, A. [CNR Istituto di Elettronica dello Stato Solido, Rome (Italy)

    2000-07-01

    The final goal of the Project FOTO is the construction of a laboratory in a clean room for the production of active matrix which can be used to obtain Active Matrix Liquid Crystal Displays (AMLCD). The AMLCD are based on Thin Film Transistors (TFT), which can be obtained by poly-silicon (poly-Si) thin films, achieved, e.g., by irradiating films of amorphous silicon (a-Si) by ultraviolet laser radiation. In this report, are presented the results of the a-Si irradiation by using the laser-facility Hercules (excimer XeCl, l=0,308 mm) done at the ENEA Frascati Centre. The transformation of a-Si into poly-Si is commented upon the variation of the space-time characteristics of the laser pulses, of the irradiation conditions and of the characteristics of the irradiated a-Si films. [Italian] Il macro-obiettivo del Progetto FOTO e' la realizzazione di un laboratorio in camera pulita per lo sviluppo di processi atti a fabbricare matrici attive utilizzabili per ottenere schermi piatti a cristalli liquidi (AMLCD, Active Matrix Liquid Crystal Display). Uno dei primi passi del processo consiste nel creare transistori a film sottile (TFT, Thin Film Transistor). A tal fine, e' necessario ottenere strati sottili di Silicio policristallino irragiando films di silicio amorfo con luce laser ultravioletta. In questo rapporto, sono presentati i risultati degli irraggiamenti di film sottili di silicio amorfo tramite la laser-facility Hercules (eccimero XeCl, l=0,308 mm) effettuati presso il C.R. ENEA di Frascati. La trasformazione di silicio amorfo in silicio policristallino cosi' ottenuta e' commentata al variare delle caratteristiche spazio-temporali dell'impulso laser, delle condizioni di irraggiamento e delle caratteristiche del film di silicio amorfo irraggiato.

  16. Development of Doped Microcrystalline Silicon Oxide and its Application to Thin‑Film Silicon Solar Cells

    NARCIS (Netherlands)

    Lambertz, A.

    2015-01-01

    The aim of the present study is the development of doped microcrystalline silicon oxide (µc‑SiOx:H) alloys and its application in thin‑film silicon solar cells. The doped µc‑SiOx:H material was prepared from carbon dioxide (CO2), silane (SiH4), hydrogen (H2) gas mixtures using plasma enhanced

  17. Local Structure and Anisotropy in the Amorphous Precursor= to Ba-Hexaferrite Thin Films

    Science.gov (United States)

    Snyder, J. E.; Harris, V. G.; Koon, N. C.; Sui, X.; Kryder, M. H.

    1996-03-01

    Ba-hexaferrite thin-films for recording media applications are commonly fabricated by a two-step process: sputter-deposition of an amorphous precursor, followed by annealing to crystallize the BaFe_12O_19 phase. The magnetic anisotropy of the crystalline films can be either in-plane or perpendicular, depending on the sputtering process used in the first step. However, conventional characterization techniques (x-ray diffraction and TEM) have been unable to observe any structure in the amorphous precursor films. In this study, such films are investigated by PD-EXAFS (polarization-dependent extended x-ray absorption fine structure). An anisotropic local ordered structure is observed around both Fe and Ba atoms in the "amorphous" films. This anisotropic local structure appears to determine the orientation of the fast-growing basal plane directions during crystallization, and thus the directions of the c-axes and the magnetic anisotropy. Results suggest that the structure of the amorphous films consists of networks made up of units of Fe atoms surrounded by their O nearest neighbors, that are connected together. Ba atoms appear to fit into in-between spaces as network-modifiers.

  18. Chemical bonding modifications of tetrahedral amorphous carbon and nitrogenated tetrahedral amorphous carbon films induced by rapid thermal annealing

    International Nuclear Information System (INIS)

    McCann, R.; Roy, S.S.; Papakonstantinou, P.; Bain, M.F.; Gamble, H.S.; McLaughlin, J.A.

    2005-01-01

    Tetrahedral amorphous carbon (ta-C) and nitrogenated tetrahedral amorphous carbon films (ta-CN x ), deposited by double bend off plane Filtered Vacuum Cathodic Arc were annealed up to 1000 deg. C in flowing argon for 2 min. Modifications on the chemical bonding structure of the rapidly annealed films, as a function of temperature, were investigated by NEXAFS, X-ray photoelectron and Raman spectroscopies. The interpretation of these spectra is discussed. The results demonstrate that the structure of undoped ta-C films prepared at floating potential with an arc current of 80 A remains stable up to 900 deg. C, whereas that of ta-CN x containing 12 at.% nitrogen is stable up to 700 deg. C. At higher temperatures, all the spectra indicated the predominant formation of graphitic carbon. Through NEXAFS studies, we clearly observed three π* resonance peaks at the ' N K edge structure. The origin of these three peaks is not well established in the literature. However our temperature-dependant study ascertained that the first peak originates from C=N bonds and the third peak originates from the incorporation of nitrogen into the graphite like domains

  19. Laser process for extended silicon thin film solar cells

    International Nuclear Information System (INIS)

    Hessmann, M.T.; Kunz, T.; Burkert, I.; Gawehns, N.; Schaefer, L.; Frick, T.; Schmidt, M.; Meidel, B.; Auer, R.; Brabec, C.J.

    2011-01-01

    We present a large area thin film base substrate for the epitaxy of crystalline silicon. The concept of epitaxial growth of silicon on large area thin film substrates overcomes the area restrictions of an ingot based monocrystalline silicon process. Further it opens the possibility for a roll to roll process for crystalline silicon production. This concept suggests a technical pathway to overcome the limitations of silicon ingot production in terms of costs, throughput and completely prevents any sawing losses. The core idea behind these thin film substrates is a laser welding process of individual, thin silicon wafers. In this manuscript we investigate the properties of laser welded monocrystalline silicon foils (100) by micro-Raman mapping and spectroscopy. It is shown that the laser beam changes the crystalline structure of float zone grown silicon along the welding seam. This is illustrated by Raman mapping which visualizes compressive stress as well as tensile stress in a range of - 147.5 to 32.5 MPa along the welding area.

  20. Achieving thermography with a thermal security camera using uncooled amorphous silicon microbolometer image sensors

    Science.gov (United States)

    Wang, Yu-Wei; Tesdahl, Curtis; Owens, Jim; Dorn, David

    2012-06-01

    Advancements in uncooled microbolometer technology over the last several years have opened up many commercial applications which had been previously cost prohibitive. Thermal technology is no longer limited to the military and government market segments. One type of thermal sensor with low NETD which is available in the commercial market segment is the uncooled amorphous silicon (α-Si) microbolometer image sensor. Typical thermal security cameras focus on providing the best image quality by auto tonemaping (contrast enhancing) the image, which provides the best contrast depending on the temperature range of the scene. While this may provide enough information to detect objects and activities, there are further benefits of being able to estimate the actual object temperatures in a scene. This thermographic ability can provide functionality beyond typical security cameras by being able to monitor processes. Example applications of thermography[2] with thermal camera include: monitoring electrical circuits, industrial machinery, building thermal leaks, oil/gas pipelines, power substations, etc...[3][5] This paper discusses the methodology of estimating object temperatures by characterizing/calibrating different components inside a thermal camera utilizing an uncooled amorphous silicon microbolometer image sensor. Plots of system performance across camera operating temperatures will be shown.

  1. Band Offsets at the Interface between Crystalline and Amorphous Silicon from First Principles

    Science.gov (United States)

    Jarolimek, K.; Hazrati, E.; de Groot, R. A.; de Wijs, G. A.

    2017-07-01

    The band offsets between crystalline and hydrogenated amorphous silicon (a -Si ∶H ) are key parameters governing the charge transport in modern silicon heterojunction solar cells. They are an important input for macroscopic simulators that are used to further optimize the solar cell. Past experimental studies, using x-ray photoelectron spectroscopy (XPS) and capacitance-voltage measurements, have yielded conflicting results on the band offset. Here, we present a computational study on the band offsets. It is based on atomistic models and density-functional theory (DFT). The amorphous part of the interface is obtained by relatively long DFT first-principles molecular-dynamics runs at an elevated temperature on 30 statistically independent samples. In order to obtain a realistic conduction-band position the electronic structure of the interface is calculated with a hybrid functional. We find a slight asymmetry in the band offsets, where the offset in the valence band (0.29 eV) is larger than in the conduction band (0.17 eV). Our results are in agreement with the latest XPS measurements that report a valence-band offset of 0.3 eV [M. Liebhaber et al., Appl. Phys. Lett. 106, 031601 (2015), 10.1063/1.4906195].

  2. Modeling chemical and topological disorder in irradiation-amorphized silicon carbide

    International Nuclear Information System (INIS)

    Yuan Xianglong; Hobbs, Linn W.

    2002-01-01

    In order to explore the relationship of chemical disorder to topological disorder during irradiation-induced amorphization of silicon carbide, a topological analysis of homonuclear bond distribution, atom coordination number and network ring size distribution has been carried out for imposed simulated disorder, equilibrated with molecular dynamics (MD) procedures utilizing a Tersoff potential. Starting configurations included random atom positions, β-SiC coordinates chemically disordered over a range of chemical disorder parameters and atom coordinates generated from earlier MD simulations of embedded collision cascades. For random starting positions in embedded simulations, the MD refinement converged to an average Si coordination of 4.3 and an average of 1.4 Si-Si and 1.0 C-C bonds per Si and C site respectively. A chemical disorder threshold was observed (χ≡N C-C /N Si-C >0.3-0.4), below which range MD equilibration resulted in crystalline behavior at all temperatures and above which a glass transition was observed. It was thus concluded that amorphization is driven by a critical concentration of homonuclear bonds. About 80% of the density change at amorphization was attributable to threshold chemical disorder, while significant topological changes occurred only for larger values of the chemical disorder parameter

  3. Fabrication of amorphous micro-ring arrays in crystalline silicon using ultrashort laser pulses

    Science.gov (United States)

    Fuentes-Edfuf, Yasser; Garcia-Lechuga, Mario; Puerto, Daniel; Florian, Camilo; Garcia-Leis, Adianez; Sanchez-Cortes, Santiago; Solis, Javier; Siegel, Jan

    2017-05-01

    We demonstrate a simple way to fabricate amorphous micro-rings in crystalline silicon using direct laser writing. This method is based on the fact that the phase of a thin surface layer can be changed into the amorphous phase by irradiation with a few ultrashort laser pulses (800 nm wavelength and 100 fs duration). Surface-depressed amorphous rings with a central crystalline disk can be fabricated without the need for beam shaping, featuring attractive optical, topographical, and electrical properties. The underlying formation mechanism and phase change pathway have been investigated by means of fs-resolved microscopy, identifying fluence-dependent melting and solidification dynamics of the material as the responsible mechanism. We demonstrate that the lateral dimensions of the rings can be scaled and that the rings can be stitched together, forming extended arrays of structures not limited to annular shapes. This technique and the resulting structures may find applications in a variety of fields such as optics, nanoelectronics, and mechatronics.

  4. Non-negligible Contributions to Thermal Conductivity From Localized Modes in Amorphous Silicon Dioxide.

    Science.gov (United States)

    Lv, Wei; Henry, Asegun

    2016-10-21

    Thermal conductivity is important for almost all applications involving heat transfer. The theory and modeling of crystalline materials is in some sense a solved problem, where one can now calculate their thermal conductivity from first principles using expressions based on the phonon gas model (PGM). However, modeling of amorphous materials still has many open questions, because the PGM itself becomes questionable when one cannot rigorously define the phonon velocities. In this report, we used our recently developed Green-Kubo modal analysis (GKMA) method to study amorphous silicon dioxide (a-SiO 2 ). The predicted thermal conductivities exhibit excellent agreement with experiments and anharmonic effects are included in the thermal conductivity calculation for all the modes in a-SiO 2 for the first time. Previously, localized modes (locons) have been thought to have a negligible contribution to thermal conductivity, due to their highly localized nature. However, in a-SiO 2 our results indicate that locons contribute more than 10% to the total thermal conductivity from 400 K to 800 K and they are largely responsible for the increase in thermal conductivity of a-SiO 2 above room temperature. This is an effect that cannot be explained by previous methods and therefore offers new insight into the nature of phonon transport in amorphous/glassy materials.

  5. Advanced modeling for optical characterization of amorphous hydrogenated silicon films

    Czech Academy of Sciences Publication Activity Database

    Franta, D.; Nečas, D.; Zajíčková, L.; Ohlídal, I.; Stuchlík, Jiří

    2013-01-01

    Roč. 541, AUG (2013), s. 12-16 ISSN 0040-6090 Institutional support: RVO:68378271 Keywords : ellipsometry * spectrophotometry * a-Si:H * Urbach tail * localized states * sum rule Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.867, year: 2013

  6. High-Efficiency Amorphous Silicon Alloy Based Solar Cells and Modules; Final Technical Progress Report, 30 May 2002--31 May 2005

    Energy Technology Data Exchange (ETDEWEB)

    Guha, S.; Yang, J.

    2005-10-01

    The principal objective of this R&D program is to expand, enhance, and accelerate knowledge and capabilities for development of high-efficiency hydrogenated amorphous silicon (a-Si:H) and amorphous silicon-germanium alloy (a-SiGe:H) related thin-film multijunction solar cells and modules with low manufacturing cost and high reliability. Our strategy has been to use the spectrum-splitting triple-junction structure, a-Si:H/a-SiGe:H/a-SiGe:H, to improve solar cell and module efficiency, stability, and throughput of production. The methodology used to achieve the objectives included: (1) explore the highest stable efficiency using the triple-junction structure deposited using RF glow discharge at a low rate, (2) fabricate the devices at a high deposition rate for high throughput and low cost, and (3) develop an optimized recipe using the R&D batch large-area reactor to help the design and optimization of the roll-to-roll production machines. For short-term goals, we have worked on the improvement of a-Si:H and a-SiGe:H alloy solar cells. a-Si:H and a-SiGe:H are the foundation of current a-Si:H based thin-film photovoltaic technology. Any improvement in cell efficiency, throughput, and cost reduction will immediately improve operation efficiency of our manufacturing plant, allowing us to further expand our production capacity.

  7. Silicon nitride films deposited with an electron beam created plasma

    Science.gov (United States)

    Bishop, D. C.; Emery, K. A.; Rocca, J. J.; Thompson, L. R.; Zamani, H.; Collins, G. J.

    1984-01-01

    The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

  8. Interfaces and thin films physics

    International Nuclear Information System (INIS)

    Equer, B.

    1988-01-01

    The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described [fr

  9. Photoluminescence properties of BaMoO4 amorphous thin films

    International Nuclear Information System (INIS)

    Marques, Ana Paula Azevedo; Melo, Dulce M.A. de; Longo, Elson; Paskocimas, Carlos A.; Pizani, Paulo S.; Leite, Edson R.

    2005-01-01

    BaMoO 4 amorphous and crystalline thin films were prepared from polymeric precursors. The BaMoO 4 was deposited onto Si wafers by means of the spinning technique. The structure and optical properties of the resulting films were characterized by FTIR reflectance spectra, X-ray diffraction (XRD), atomic force microscopy (AFM) and optical reflectance. The bond Mo-O present in BaMoO 4 was confirmed by FTIR reflectance spectra. XRD characterization showed that thin films heat-treated at 600 and 200 deg. C presented the scheelite-type crystalline phase and amorphous, respectively. AFM analyses showed a considerable variation in surface morphology by comparing samples heat-treated at 200 and 600 deg. C. The reflectivity spectra showed two bands, positioned at 3.38 and 4.37 eV that were attributed to the excitonic state of Ba 2+ and electronic transitions within MoO 2- 4 , respectively. The optical band gaps of BaMoO 4 were 3.38 and 2.19 eV, for crystalline (600 deg. C/2 h) and amorphous (200 deg. C/8 h) films, respectively. The room-temperature luminescence spectra revealed an intense single-emission band in the visible region. The PL intensity of these materials was increased upon heat-treatment. The excellent optical properties observed for BaMoO 4 amorphous thin films suggested that this material is a highly promising candidate for photoluminescent applications

  10. Laser irradiation effects in crystalline and amorphous YBaCuO thin films

    Science.gov (United States)

    Lewandowski, S. J.; Jung, G.; Okunev, V. D.; Samoilenko, Z. A.; Isaev, V. A.; Abaloshev, A.; Gierlowski, P.; Klimov, A.; Barbanera, S.

    2000-11-01

    We have conducted a systematic study of the effects of laser irradiation on the properties of crystalline and amorphous YBaCuO thin films obtained by laser deposition. The irradiation experiments were mainly performed with a KrF and XeCl pulsed (25 ns) excimer lasers producing energy densities of the order of 0.1 J/cm2, but we used also Cu vapor green and Ar ion blue lasers with medium power output. In all cases the irradiation produced irreversible changes in the investigated samples. We measured structural, optical and transport properties of the irradiated films. After high dose laser treatment of crystalline (orthorombic) films their superconducting properties as a rule deteriorated, but even small dose was sufficient for a marked improvement of surface smoothness. The response of amorphous films was more complex, dependent on the substrate and relied on the presence of crystalline clusters embedded in the amorphous matrix. X-ray diffraction studies of amorphous films revealed structural transformations caused by the interaction with laser light, and the results of optical spectroscopic measurements lead to interesting conclusions concerning the band structure in the investigated materials. Photon assisted structural transformations are suggested as the possible explanation of the observed effects.

  11. The physics and applications of amorphous semiconductors

    CERN Document Server

    Madan, Arun

    1988-01-01

    This comprehensive, detailed treatise on the physics and applications of the new emerging technology of amorphous semiconductors focuses on specific device research problems such as the optimization of device performance. The first part of the book presents hydrogenated amorphous silicon type alloys, whose applications include inexpensive solar cells, thin film transistors, image scanners, electrophotography, optical recording and gas sensors. The second part of the book discusses amorphous chalcogenides, whose applications include electrophotography, switching, and memory elements. This boo

  12. Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (improvement of conversion efficiency of amorphous silicon solar cells after degradation); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (amorphous taiyo denchi no shoki rekkago koritsu kojo no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M. [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on technological development for qualitative improvement of a-Si solar cells after initial degradation in fiscal 1994. On the fabrication technology of light-stable a-Si films, the film formation method possible to control combined hydrogen by repetitive formation/treatment was developed. The obtained high-quality light-stable a-Si film was featured by low defect density in a wide optical band gap range, and defect density of nearly 3 {times} 10{sup 16}/cm{sup -3} after light irradiation. The light degradation rate of the cell where the a-Si film was applied to i layer was relatively stable by 10% or less. The a-Si/a-Si double-layer tandem cell fabricated by this technology produced a high conversion efficiency of 10.5%. By applying {mu}c-Si material to photoactive layer as narrow band gap material, the cell with optical sensitivity even in long wavelength ranges more than 1000nm was obtained. The a-Si/{mu}c-Si double-layer tandem cell produced an initial efficiency of 8.0% and an efficiency after degradation of 7.5%. 12 figs., 3 tabs.

  13. Characterization of an amorphous silicon flat panel for controlling the positioning accuracy of sheet; Caracterizacion de un panel plano de silicio amorfo para control de la exactitud en el posicionamiento de laminas

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, J.; Gonzalez, V.; Gimeno, J.; Dolores, V. de los; Pastor, V.; Crispin, V.; Guardino, C.

    2011-07-01

    It has established a method for measuring the position of the blades in a multi leaf collimator (MLC) used to measure dose portal imaging device (EPID) of amorphous silicon, and verified its accuracy using radiochromic films and measures water with diode Cuba, techniques perfectly well validated in our institution. This dose profiles are studied for each sheet and determine their position at the point which has 50% of the dose in the open field.

  14. Comparative Study of Furnace and Flash Lamp Annealed Silicon Thin Films Grown by Plasma Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Maheshwar Shrestha

    2018-03-01

    Full Text Available Low-temperature growth of microcrystalline silicon (mc-Si is attractive for many optoelectronic device applications. This paper reports a detailed comparison of optical properties, microstructure, and morphology of amorphous silicon (a-Si thin films crystallized by furnace annealing and flash lamp annealing (FLA at temperatures below the softening point of glass substrate. The initial a-Si films were grown by plasma enhanced chemical vapor deposition (PECVD. Reflectance measurement indicated characteristic peak in the UV region ~280 nm for the furnace annealed (>550 °C and flash lamp annealed films, which provided evidence of crystallization. The film surface roughness increased with increasing the annealing temperature as well as after the flash lamp annealing. X-ray diffraction (XRD measurement indicated that the as-deposited samples were purely amorphous and after furnace crystallization, the crystallites tended to align in one single direction (202 with uniform size that increased with the annealing temperature. On the other hand, the flash lamp crystalized films had randomly oriented crystallites with different sizes. Raman spectroscopy showed the crystalline volume fraction of 23.5%, 47.3%, and 61.3% for the samples annealed at 550 °C, 650 °C, and with flash lamp, respectively. The flash lamp annealed film was better crystallized with rougher surface compared to furnace annealed ones.

  15. Intense Red Catho- and Photoluminescence from 200 nm Thick Samarium Doped Amorphous AlN Thin Films

    Directory of Open Access Journals (Sweden)

    Ali Tariq

    2009-01-01

    Full Text Available Abstract Samarium (Sm doped aluminum nitride (AlN thin films are deposited on silicon (100 substrates at 77 K by rf magnetron sputtering method. Thick films of 200 nm are grown at 100–200 watts RF power and 5–8 m Torr nitrogen, using a metal target of Al with Sm. X-ray diffraction results show that films are amorphous. Cathodoluminescence (CL studies are performed and four peaks are observed in Sm at 564, 600, 648, and 707 nm as a result of4G5/2 → 6H5/2,4G5/2 → 6H7/2,4G5/2 → 6H9/2, and4G5/2 → 6H11/2transitions. Photoluminescence (PL provides dominant peaks at 600 and 707 nm while CL gives the intense peaks at 600 nm and 648 nm, respectively. Films are thermally activated at 1,200 K for half an hour in a nitrogen atmosphere. Thermal activation enhances the intensity of luminescence.

  16. Intense Red Catho- and Photoluminescence from 200 nm Thick Samarium Doped Amorphous AlN Thin Films.

    Science.gov (United States)

    Maqbool, Muhammad; Ali, Tariq

    2009-04-25

    Samarium (Sm) doped aluminum nitride (AlN) thin films are deposited on silicon (100) substrates at 77 K by rf magnetron sputtering method. Thick films of 200 nm are grown at 100-200 watts RF power and 5-8 m Torr nitrogen, using a metal target of Al with Sm. X-ray diffraction results show that films are amorphous. Cathodoluminescence (CL) studies are performed and four peaks are observed in Sm at 564, 600, 648, and 707 nm as a result of (4)G(5/2) --> (6)H(5/2), (4)G(5/2) --> (6)H(7/2), (4)G(5/2) --> (6)H(9/2), and (4)G(5/2) --> (6)H(11/2) transitions. Photoluminescence (PL) provides dominant peaks at 600 and 707 nm while CL gives the intense peaks at 600 nm and 648 nm, respectively. Films are thermally activated at 1,200 K for half an hour in a nitrogen atmosphere. Thermal activation enhances the intensity of luminescence.

  17. Intense Red Catho- and Photoluminescence from 200 nm Thick Samarium Doped Amorphous AlN Thin Films

    Science.gov (United States)

    Maqbool, Muhammad; Ali, Tariq

    2009-07-01

    Samarium (Sm) doped aluminum nitride (AlN) thin films are deposited on silicon (100) substrates at 77 K by rf magnetron sputtering method. Thick films of 200 nm are grown at 100-200 watts RF power and 5-8 m Torr nitrogen, using a metal target of Al with Sm. X-ray diffraction results show that films are amorphous. Cathodoluminescence (CL) studies are performed and four peaks are observed in Sm at 564, 600, 648, and 707 nm as a result of 4G5/2 → 6H5/2, 4G5/2 → 6H7/2, 4G5/2 → 6H9/2, and 4G5/2 → 6H11/2 transitions. Photoluminescence (PL) provides dominant peaks at 600 and 707 nm while CL gives the intense peaks at 600 nm and 648 nm, respectively. Films are thermally activated at 1,200 K for half an hour in a nitrogen atmosphere. Thermal activation enhances the intensity of luminescence.

  18. Coulomb blockade effects in silicon nanoparticles embedded in thin silicon-rich oxide films.

    Science.gov (United States)

    Morales-Sánchez, A; Barreto, J; Domínguez, C; Aceves, M; Yu, Z; Luna-López, J A

    2008-04-23

    Silicon nanoparticles (Si-nps) embedded in silicon oxide matrix were created using silicon-rich oxide (SRO) films deposited by low pressure chemical vapour deposition (LPCVD) followed by a thermal annealing at 1100 °C. The electrical properties were studied using metal-oxide-semiconductor (MOS) structures with the SRO films as the active layers. Capacitance versus voltage (C-V) exhibited downward and upward peaks in the accumulation region related to charge trapping and de-trapping effects of Si-nps, respectively. Current versus voltage (I-V) measurements showed fluctuations in the form of spike-like peaks and a clear staircase at room temperature. These effects have been related to the Coulomb blockade (CB) effect in the silicon nanoparticles embedded in SRO films. The observed quantum effects are due to 1 nm nanoparticles.

  19. Structural origins of magnetic anisotropy in sputtered amorphous Tb-Fe films

    Science.gov (United States)

    Harris, V. G.; Aylesworth, K. D.; Das, B. N.; Elam, W. T.; Koon, N. C.

    1992-09-01

    Using x-ray-absorption fine-structure measurements we have obtained clear evidence for structural anisotropy in amorphous sputter-deposited TbFe films exhibiting perpendicular magnetic anisotropy. Modeling of the data shows that perpendicular anisotropy in these films is associated with Fe-Fe and Tb-Tb pair correlations which are greater in plane and Tb-Fe correlations which are greater perpendicular to the film plane. Upon annealing at 300 °C the measured structural anisotropy disappears and the magnetic anisotropy decreases to a level consistent with magnetoelastic interactions between the film and substrate.

  20. Process for Polycrystalline film silicon growth

    Science.gov (United States)

    Wang, Tihu; Ciszek, Theodore F.

    2001-01-01

    A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.

  1. DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Sanchez, A; Aceves-Mijares, M [INAOE, Electronics Department, Apartado 51, Puebla, 72000 (Mexico); Barreto, J; DomInguez, C [Instituto de Microelectronica de Barcelona, IMB-CNM (CSIC), Barcelona (Spain); Peralvarez, M; Garrido, B [EME, Departament d' Electronica, Universitat de Barcelona, MartI i Franques 1, 08028 Barcelona (Spain); Luna-Lopez, J A, E-mail: amorales@inaoep.mx [CIDS-BUAP, Apartado 1651, Puebla, Pue, 72000 (Mexico)

    2010-02-26

    Electroluminescent properties of silicon-rich oxide (SRO) films were studied using metal oxide semiconductor-(MOS)-like devices. Thin SRO films with 4 at.% of silicon excess were deposited by low pressure chemical vapour deposition followed by a thermal annealing at 1100 deg. C. Intense continuous visible and infrared luminescence has been observed when devices are reversely and forwardly bias, respectively. After an electrical stress, the continuous electroluminescence (EL) is quenched but devices show strong field-effect EL with pulsed polarization. A model based on conductive paths-across the SRO film- has been proposed to explain the EL behaviour in these devices.

  2. Optical and structural properties of Ge-Ga-Te amorphous thin films fabricated by magnetron sputtering

    Science.gov (United States)

    Dong, Ning; Chen, Yimin; Wei, Ningning; Wang, Guoxiang; Wang, Rongping; Shen, Xiang; Dai, Shixun; Nie, Qiuhua

    2017-11-01

    We deposited amorphous Ge-Ga-Te thin films by the magnetron sputtering method, and investigated the corresponding structural and optical properties by various diagnosis tools. The as-deposited film is amorphous, while crystalline features appear gradually with increasing annealing temperature. The optical band-gap and refractive index for the as-deposited and annealed films were analyzed as a function of chemical composition. It was also found that, with increasing Te and decreasing Ge and Ga content, the films usually exhibited a higher refractive index as well as a smaller optical band gap, and the optical band gap decreased with increasing annealing temperature. These results are useful to the fabrication of integrated optical devices for the biomedical sensing applications.

  3. Epitaxial Growth of Cadmium Selenide Films on Silicon with a Silicon Carbide Buffer Layer

    Science.gov (United States)

    Antipov, V. V.; Kukushkin, S. A.; Osipov, A. V.; Rubets, V. P.

    2018-03-01

    An epitaxial cubic 350-nm-thick cadmium selenide has been grown on silicon for the first time by the method of evaporation and condensation in a quasi-closed volume. It is revealed that, in this method, the optimum substrate temperature is 590°C, the evaporator temperature is 660°C, and the growth time is 2 s. To avoid silicon etching by selenium with formation of amorphous SiSe2, a high-quality 100-nm-thick buffer silicon carbide layer has been synthesized on the silicon surface by substituting atoms. The powder diffraction pattern and the Raman spectrum unambiguously correspond to cubic cadmium selenide crystal. The ellipsometric, Raman, and electron diffraction analyses demonstrate high structural perfection of the cadmium selenide layer and the absence of a polycrystalline phase.

  4. Synthesis and characterization of inorganic silicon oxycarbide glass thin films by reactive rf-magnetron sputtering

    International Nuclear Information System (INIS)

    Ryan, Joseph V.; Pantano, C. G.

    2007-01-01

    Silicon oxycarbide glasses have been of interest because of the potential range of properties they might exhibit through a change in carbon-to-oxygen ratio. They are metastable materials and, as such, their structures and properties are very dependent upon the synthesis method. Silicon oxycarbide bonding has been seen in materials made by melting, oxidation, polycarbosilane or sol/gel pyrolysis, and chemical vapor deposition. In this work, the radio-frequency reactive sputtering of silicon carbide targets was explored for synthesis of amorphous silicon oxycarbide thin films. SiO (2-2x) C x films, with a continuous range of compositions where 0≤x≤1, were deposited by controlling the amount of oxygen present in the plasma with a SiC target. This resulted in a density range from 1.9 to 2.8 g/cm 3 and a range of refractive indexes from 1.35 to 2.85. Analysis of the film compositions, structures, and properties were performed using x-ray photoelectron spectroscopy, infrared spectroscopy, nuclear magnetic resonance, profilometry, electron microscopy, grazing incidence x-ray reflectivity, and UV-visible transmission and reflection. The compositional range obtainable by this rf sputtering method is much wider than that of other synthesis methods. It is shown here that for oxygen-to-carbon ratios between ∼0.10 and 10.0, silicon oxycarbide bonding comprises 55%-95% of the material structure. These sputter-deposited materials were also found to have significantly less free carbon as compared to those produced by other methods. Thus, the unique properties for these novel oxycarbide materials can now be established

  5. Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

    Czech Academy of Sciences Publication Activity Database

    Krivyakin, G.K.; Volodin, V.; Kochubei, S.A.; Kamaev, G.N.; Purkrt, Adam; Remeš, Zdeněk; Fajgar, Radek; Stuchlíková, The-Ha; Stuchlík, Jiří

    2016-01-01

    Roč. 50, č. 7 (2016), s. 935-940 ISSN 1063-7826 R&D Projects: GA MŠk LH12236 Institutional support: RVO:68378271 ; RVO:67985858 Keywords : hydrogenated amorphous silicon * nanocrystals * laser annealing Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.602, year: 2016

  6. Comparative study of porous amorphous a-Si1-xCx films and a-Si1-xCx membranes on structural and luminescence properties

    International Nuclear Information System (INIS)

    Boukezzata, A.; Nezzal, G.; Guerbous, L.; Keffous, A.; Gabouze, N.; Belkacem, Y.; Manseri, A.; Brighet, A.; Kechouane, M.; Menari, H.

    2011-01-01

    Electrochemical etching of amorphous SiC in fluoride solution was studied. Anodic dissolution and passivation are observed for p-type electrodes under dark illumination. The dissolution of p-type a-Si 1-x C x is found to be under mixed transport/kinetic control; the diffusion current is of first order in fluoride concentration. Porous etching was not observed in this case. The surface finish of 6H-SiC depends on the experimental conditions; both uniform and porous etching is observed. In this paper, we report the formation of porous p-type amorphous SiC (a-Si 1-x C x ) films, elaborated previously by DC magnetron sputtering and analyze the porous layers (PSC) using scanning electron microscopy, spectrophotometer and photoluminescence. The crystal structures and the preparation conditions of porous SiC are shown to have an effect on the structural and electrical properties of the material obtained. SEM observation indicates that the porous a-Si 1-x C x layers have shown some specific feature; a semi-cylindrical structure of the porous network has been observed. - Research highlights: →Macroporous amorphous silicon carbide (PSC) by anodization. →Membrane of amorphous silicon carbide by KOH etching. → Membrane a-Si1-xCx and PSC for humidity sensors. The work is not still published.

  7. Analysis of pulsed laser deposited amorphous chalcogenide film thickness distribution: Plume deflection angle dependence

    OpenAIRE

    Pavlišta , Martin; Zajac , Vit; Nazabal , Virginie; Gutwirth , Jan; Gouttefangeas , Francis; Němec , Petr

    2018-01-01

    International audience; Pulsed laser deposition exploiting a KrF excimer laser was used to fabricate amorphous As-S thin films from bulk As2S3 glass target. Thickness profile of the film was extracted from variable angle spectroscopic ellipsometry data. The dependence of thickness distribution of prepared thin layer on laser beam plume deflection angle was evaluated and corresponding equations were suggested.

  8. Formation and structure of V-Zr amorphous alloy thin films

    KAUST Repository

    King, Daniel J M

    2015-01-01

    Although the equilibrium phase diagram predicts that alloys in the central part of the V-Zr system should consist of V2Zr Laves phase with partial segregation of one element, it is known that under non-equilibrium conditions these materials can form amorphous structures. Here we examine the structures and stabilities of thin film V-Zr alloys deposited at room temperature by magnetron sputtering. The films were characterized by X-ray diffraction, transmission electron microscopy and computational methods. Atomic-scale modelling was used to investigate the enthalpies of formation of the various competing structures. The calculations confirmed that an amorphous solid solution would be significantly more stable than a random body-centred solid solution of the elements, in agreement with the experimental results. In addition, the modelling effort provided insight into the probable atomic configurations of the amorphous structures allowing predictions of the average distance to the first and second nearest neighbours in the system.

  9. Fast diffusion and nucleation of the amorphous phase in Ni--Zr films

    International Nuclear Information System (INIS)

    Ehrhart, P.; Averback, R.S.; Hahn, H.; Yadavalli, S.; Flynn, C.P.

    1988-01-01

    The nucleation of the amorphous phase by solid-state reactions has been investigated on single-crystal Zr films grown by molecular beam epitaxy and covered in situ with either polycrystalline Ni, amorphous (a-) NiZr, or single-crystalline Zr 99 N 01 films. Interfacial reactions were investigated by backscattering analysis or secondary ion mass spectroscopy. The amorphizing reaction occurred only in the specimen with the a-NiZr overlayer, although fast Ni diffusion through the single-crystalline Zr layer was observed in all three specimens. The nucleation behavior of a-NiZr is attributed to the combination of high-Ni and low-Zr mobility in crystalline Zr

  10. Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors

    International Nuclear Information System (INIS)

    Pereira, L.; Barquinha, P.; Fortunato, E.; Martins, R.

    2005-01-01

    In this work, metal induced crystallization using nickel was employed to obtain polycrystalline silicon by crystallization of amorphous films for thin film transistor applications. The devices were produced through only one lithographic process with a bottom gate configuration using a new gate dielectric consisting of a multi-layer of aluminum oxide/titanium oxide produced by atomic layer deposition. The best results were obtained for TFTs with the active layer of poly-Si crystallized for 20 h at 500 deg. C using a nickel layer of 0.5 nm where the effective mobility is 45.5 cm 2 V -1 s -1 . The threshold voltage, the on/off current ratio and the sub-threshold voltage are, respectively, 11.9 V, 5.55x10 4 and 2.49 V/dec

  11. Operando formation of an ultra-low friction boundary film from synthetic magnesium silicon hydroxide additive

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Qiuying; Rudenko, Pavlo; Miller, Dean J.; Wen, Jianguo; Berman, Diana; Zhang, Yuepeng; Arey, Bruce; Zhu, Zihua; Erdemir, Ali

    2017-06-01

    The paper reports the operando and self-healing formation of DLC films at sliding contact surfaces by the addition of synthetic magnesium silicon hydroxide (MSH) nanoparticles to base oil. The formation of such films leads to a reduction of the coefficient of friction by nearly an order of magnitude and substantially reduces wear losses. The ultralow friction layer characterized by transmission electron microscope (TEM), electron energy loss spectroscopy (EELS), and Raman spectroscopy consists of amorphous DLC containing SiOx that forms in a continuous and self-repairing manner during operation. This environmentally benign and simple approach offers promise for significant advances in lubrication and reduced energy losses in engines and other mechanical systems.

  12. Enhancement of hydrogenated amorphous silicon solar cells with front-surface hexagonal plasmonic arrays from nanoscale lithography

    Science.gov (United States)

    Zhang, Chenlong; Gwamuri, Jephias; Cvetanovic, Sandra; Sadatgol, Mehdi; Guney, Durdu O.; Pearce, Joshua M.

    2017-07-01

    The study first uses numerical simulations of hexagonal triangle and sphere arrays to optimize the performance of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices. The simulations indicated the potential for a sphere array to provide optical enhancement (OE) up to 7.4% compared to a standard cell using a nanosphere radius of 250 nm and silver film thickness of 50 nm. Next a detailed series of a-Si:H cells were fabricated and tested for quantum efficiency and characteristic and current-voltage (I-V) profiles using a solar simulator. Triangle and sphere array based cells, as well as the uncoated reference cells are analyzed and the results find that the simulation does not precisely predict the observed enhancement, but it forecasts a trend and can be used to guide fabrication. In general, the measured OE follows the simulated trend: (1) for triangular arrays no enhancement is observed and as the silver thickness increases the more degradation of the cell; (2) for annealed arrays both measured and simulated OE occur with the thinner silver thickness. Measured efficiency enhancement reached 20.2% and 10.9% for nanosphere diameter D = 500 nm, silver thicknesses h = 50 nm and 25 nm, respectively. These values, which surpass simulation results, indicate that this method is worth additional investigation.

  13. Conformational study of protein interactions with hydrogen-passivated amorphous silicon surfaces: Effect of pH

    Science.gov (United States)

    Brahmi, Yamina; Filali, Larbi; Sib, Jamal Dine; Bouhekka, Ahmed; Benlakehal, Djamel; Bouizem, Yahya; Kebab, Aissa; Chahed, Larbi

    2017-11-01

    The adsorption of Bovine Serum Albumin (BSA) proteins on amorphous silicon (a-Si) surfaces was studied with respect to solution pH. Thin films of a-Si were deposited using radio-frequency magnetron sputtering at room temperature and then treated in a hydrogen ambient to form a hydrogenated a-Si surface layer (a-Si:H). The interactions of the as-deposited and hydrogenated surfaces with the proteins at neutral, acidic, and basic environments was probed by means of Fourier transform infrared attenuated total reflection (FTIR-ATR) spectroscopy, Spectroscopic Ellipsometry (SE), and Atomic Force Microscopy (AFM), to study the influence of the charge of proteins on their adsorption and conformation on the a-Si:H surface, compared with the a-Si surface. The results show that the charge of the proteins has a significant effect on their interactions with these two substrates but in dissimilar ways. For the as-deposited substrate, these interactions are predictably coulombic since the surface is charged. For the hydrogenated substrate, the adsorption of the proteins depends on their conformation which is heavily affected by pH, and the size of their footprint (adsorption mode) on the surface.

  14. Direct and inverse Staebler-Wronski effects observed in carbon-doped hydrogenated amorphous silicon photo-detectors

    International Nuclear Information System (INIS)

    Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C.; Brochero, J.; Calderon, A.; Fernandez, M.G.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Scodellaro, L.; Sobron, M.

    2011-01-01

    The photo-response behaviour of Amorphous Silicon Position Detectors (ASPDs) under prolonged illumination with a 681 nm diode-laser and a 633 nm He-Ne laser is presented. Both direct and inverse Staebler-Wronski effects are observed.

  15. Photoconductivity studies on amorphous and crystalline TiO{sub 2} films doped with gold nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Valverde-Aguilar, G.; Garcia-Macedo, J.A. [Universidad Nacional Autonoma de Mexico, Departamento de Estado Solido, Instituto de Fisica, Mexico D.F. (Mexico); Renteria-Tapia, V. [Universidad de Guadalajara, Centro Universitario de los Valles, Departamento de Ciencias Naturales y Exactas, Ameca, Jalisco (Mexico); Aguilar-Franco, M. [Universidad Nacional Autonoma de Mexico, Departamento de Fisica Quimica, Instituto de Fisica, Mexico D.F. (Mexico)

    2011-06-15

    In this work, amorphous and crystalline TiO{sub 2} films were synthesized by the sol-gel process at room temperature. The TiO{sub 2} films were doped with gold nanoparticles. The films were spin-coated on glass wafers. The crystalline samples were annealed at 100 C for 30 minutes and sintered at 520 C for 2 h. All films were characterized using X-ray diffraction, transmission electronic microscopy and UV-Vis absorption spectroscopy. Two crystalline phases, anatase and rutile, were formed in the matrix TiO{sub 2} and TiO{sub 2}/Au. An absorption peak was located at 570 nm (amorphous) and 645 nm (anatase). Photoconductivity studies were performed on these films. The experimental data were fitted with straight lines at darkness and under illumination at 515 nm and 645 nm. This indicates an ohmic behavior. Crystalline TiO{sub 2}/Au films are more photoconductive than the amorphous ones. (orig.)

  16. Heat capacity of amorphous and disordered Nb3Ge thin films

    International Nuclear Information System (INIS)

    Rao, N.A.H.K.

    1979-06-01

    Heat capacity measurements on 1000 to 1500A thick amorphous Nb 3 Ge and granular Al films have been carried out using an ac technique. The major goal of the experiment was to study the effect of thermal fluctuations, both above and below the superconducting transition temperature T/sub c/, in dirty, short meanfree path materials

  17. Analysis of frequency dispersion in amorphous In–Ga–Zn–O thin-film transistors

    NARCIS (Netherlands)

    Bhoolokam, A.; Nag, M.; Chasin, A.; Steudel, S.; Genoe, J.; Gelinck, G.; Groeseneken, G.; Heremans, P.

    2015-01-01

    It is shown in this paper that the finite resistance of the accumulation channel in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs) is the main cause of the frequency dispersion of the capacitance–voltage curves in these devices. A transmission line model, accounting for the distributed

  18. Pulsed laser deposition of Co- and Fe-based amorphous magnetic films and multilayers

    Czech Academy of Sciences Publication Activity Database

    Acquaviva, S.; Caricato, A. P.; D'Anna, E.; Fernández, M.; Luches, A.; Frait, Zdeněk; Majková, E.; Ozvold, M.; Luby, S.; Mengucci, P.

    2003-01-01

    Roč. 433, 1-2 (2003), s. 252-258 ISSN 0040-6090 Grant - others:NATO(XX) PST.CLG.978058; VEGA(SK) 2/1106/22 Institutional research plan: CEZ:AV0Z1010914 Keywords : laser ablation * amorphous magnetic materials * magnetic thin films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.598, year: 2003

  19. TXRF analysis of trace metals in thin silicon nitride films

    International Nuclear Information System (INIS)

    Vereecke, G.; Arnauts, S.; Verstraeten, K.; Schaekers, M.; Heyrts, M.M.

    2000-01-01

    As critical dimensions of integrated circuits continue to decrease, high dielectric constant materials such as silicon nitride are being considered to replace silicon dioxide in capacitors and transistors. The achievement of low levels of metal contamination in these layers is critical for high performance and reliability. Existing methods of quantitative analysis of trace metals in silicon nitride require high amounts of sample (from about 0.1 to 1 g, compared to a mass of 0.2 mg for a 2 nm thick film on a 8'' silicon wafer), and involve digestion steps not applicable to films on wafers or non-standard techniques such as neutron activation analysis. A novel approach has recently been developed to analyze trace metals in thin films with analytical techniques currently used in the semiconductor industry. Sample preparation consists of three steps: (1) decomposition of the silicon nitride matrix by moist HF condensed at the wafer surface to form ammonium fluosilicate. (2) vaporization of the fluosilicate by a short heat treatment at 300 o C. (3) collection of contaminants by scanning the wafer surface with a solution droplet (VPD-DSC procedure). The determination of trace metals is performed by drying the droplet on the wafer and by analyzing the residue by TXRF, as it offers the advantages of multi-elemental analysis with no dilution of the sample. The lower limits of detection for metals in 2 nm thick films on 8'' silicon wafers range from about 10 to 200 ng/g. The present study will focus on the matrix effects and the possible loss of analyte associated with the evaporation of the fluosilicate salt, in relation with the accuracy and the reproducibility of the method. The benefits of using an internal standard will be assessed. Results will be presented from both model samples (ammonium fluoride contaminated with metallic salts) and real samples (silicon nitride films from a production tool). (author)

  20. Ultrafast all-optical arithmetic logic based on hydrogenated amorphous silicon microring resonators

    Science.gov (United States)

    Gostimirovic, Dusan; Ye, Winnie N.

    2016-03-01

    For decades, the semiconductor industry has been steadily shrinking transistor sizes to fit more performance into a single silicon-based integrated chip. This technology has become the driving force for advances in education, transportation, and health, among others. However, transistor sizes are quickly approaching their physical limits (channel lengths are now only a few silicon atoms in length), and Moore's law will likely soon be brought to a stand-still despite many unique attempts to keep it going (FinFETs, high-k dielectrics, etc.). This technology must then be pushed further by exploring (almost) entirely new methodologies. Given the explosive growth of optical-based long-haul telecommunications, we look to apply the use of high-speed optics as a substitute to the digital model; where slow, lossy, and noisy metal interconnections act as a major bottleneck to performance. We combine the (nonlinear) optical Kerr effect with a single add-drop microring resonator to perform the fundamental AND-XOR logical operations of a half adder, by all-optical means. This process is also applied to subtraction, higher-order addition, and the realization of an all-optical arithmetic logic unit (ALU). The rings use hydrogenated amorphous silicon as a material with superior nonlinear properties to crystalline silicon, while still maintaining CMOS-compatibility and the many benefits that come with it (low cost, ease of fabrication, etc.). Our method allows for multi-gigabit-per-second data rates while maintaining simplicity and spatial minimalism in design for high-capacity manufacturing potential.

  1. Serially Connected Micro Amorphous Silicon Solar Cells for Compact High-Voltage Sources

    Directory of Open Access Journals (Sweden)

    Jiyoon Nam

    2016-01-01

    Full Text Available We demonstrate a compact amorphous silicon (a-Si solar module to be used as high-voltage power supply. In comparison with the organic solar module, the main advantages of the a-Si solar module are its compatibility with photolithography techniques and relatively high power conversion efficiency. The open circuit voltage of a-Si solar cells can be easily controlled by serially interconnecting a-Si solar cells. Moreover, the a-Si solar module can be easily patterned by photolithography in any desired shapes with high areal densities. Using the photolithographic technique, we fabricate a compact a-Si solar module with noticeable photovoltaic characteristics as compared with the reported values for high-voltage power supplies.

  2. Recombination processes and light-induced defect creation in hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Morigaki, K. [Department of Electrical and Digital-System Engineering, Hiroshima Institute of Technology, Miyake, Saeki-ku (Japan)

    2009-05-15

    Recombination processes of electrons and holes in hydrogenated amorphous silicon (a-Si:H) are reviewed in terms of our model. The long decay component of photoluminescence (PL) and the long decay of light-induced electron spin resonance (LESR) are compared, and it is concluded that radiative centres responsible for the long decay component of PL are not LESR centres that are nonradiative centres. This is consistent with our model. The mechanism of light-induced defect creation in a-Si:H and its kinetics is summarized in terms of our model. The related defects involved in the recombination processes and the light-induced defect creation in a-Si:H are discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Direct measurements of the velocity and thickness of ''explosively'' propagating buried molten layers in amorphous silicon

    International Nuclear Information System (INIS)

    Lowndes, D.H.; Jellison, G.E. Jr.; Pennycook, S.J.; Withrow, S.P.; Mashburn, D.N.

    1986-01-01

    Simultaneous infrared (1152 nm) and visible (633 nm) reflectivity measurements with nanosecond resolution were used to study the initial formation and subsequent motion of pulsed KrF laser-induced ''explosively'' propagating buried molten layers in ion implantation-amorphized silicon. The buried layer velocity decreases with depth below the surface, but increases with KrF laser energy density; a maximum velocity of about 14 m/s was observed, implying an undercooling-velocity relationship of approx. 14 K/(m/s). Z-contrast scanning transmission electron microscopy was used to form a direct chemical image of implanted Cu ions transported by the buried layer and showed that the final buried layer thickness was <15 nm

  4. RBS and XRD analysis of silicon doped titanium diboride films

    International Nuclear Information System (INIS)

    Mollica, S.; Sood, D.K.; Ghantasala, M.K.; Kothari, R.

    1999-01-01

    Titanium diboride is a newly developed material suitable for protective coatings. Its high temperature oxidation resistance at temperatures of 700 deg C and beyond is limited due to its poor oxidative behaviour. This paper presents a novel approach to improving the coatings' oxidative characteristics at temperatures of 700 deg C by doping with silicon. Titanium diboride films were deposited onto Si(100) wafer substrates using a DC magnetron sputtering system. Films were deposited in two different compositions, one at pure TiB 2 and the other with 20 % Si doping. These samples were vacuum annealed at 700 deg C at 1x10 -6 Torr to investigate the anaerobic behaviour of the material at elevated temperatures and to ensure that they were crystalline. Samples were then oxidised in air at 700 deg C to investigate their oxidation resistance. Annealing the films at 700 deg C in air results in the oxidation of the film as titanium and boron form TiO 2 and B 2 O 3 . Annealing is seen to produce only minor changes in the films. There is some silicon diffusion from the substrate at elevated temperatures, which is related to the porous nature of the deposited film and the high temperature heat treatments. However, silicon doped films showed relatively less oxidation characteristics after annealing in air compared with the pure TiB 2 samples

  5. Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures

    KAUST Repository

    Mughal, Asad Jahangir

    2014-01-01

    Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material\\'s luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon. This journal is

  6. Band-gap engineering by molecular mechanical strain-induced giant tuning of the luminescence in colloidal amorphous porous silicon nanostructures.

    Science.gov (United States)

    Mughal, A; El Demellawi, J K; Chaieb, Sahraoui

    2014-12-14

    Nano-silicon is a nanostructured material in which quantum or spatial confinement is the origin of the material's luminescence. When nano-silicon is broken into colloidal crystalline nanoparticles, its luminescence can be tuned across the visible spectrum only when the sizes of the nanoparticles, which are obtained via painstaking filtration methods that are difficult to scale up because of low yield, vary. Bright and tunable colloidal amorphous porous silicon nanostructures have not yet been reported. In this letter, we report on a 100 nm modulation in the emission of freestanding colloidal amorphous porous silicon nanostructures via band-gap engineering. The mechanism responsible for this tunable modulation, which is independent of the size of the individual particles and their distribution, is the distortion of the molecular orbitals by a strained silicon-silicon bond angle. This mechanism is also responsible for the amorphous-to-crystalline transformation of silicon.

  7. Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD

    CERN Document Server

    Pereyra, I; Carreno, M N P; Prado, R J; Fantini, M C A

    2000-01-01

    We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-Si C chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H sub 2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-Si C by the RF-PECVD technique. Doping experiments were also performed on ordered material using phosphorus and nitrogen as donor impurities and boron and aluminum as acceptor ones. For nitrogen a doping efficiency close to device quality a-Si:H was obtained, the lower activation energy being 0,12 eV with room temperature dark conductivity of 2.10 sup - sup 3 (OMEGA.cm). Nitrogen doping efficiency was higher than phosphorous for all studied samples. For p-type doping, results indicate that, even though the attained conductivity values are not device levels, aluminum doping conducted to a promising shift in the Fermi level. Also, aluminum resulted a more efficie...

  8. Magnetism of Amorphous and Nano-Crystallized Dc-Sputter-Deposited MgO Thin Films

    Directory of Open Access Journals (Sweden)

    K. V. Rao

    2013-08-01

    Full Text Available We report a systematic study of room-temperature ferromagnetism (RTFM in pristine MgO thin films in their amorphous and nano-crystalline states. The as deposited dc-sputtered films of pristine MgO on Si substrates using a metallic Mg target in an O2 containing working gas atmosphere of (N2 + O2 are found to be X-ray amorphous. All these films obtained with oxygen partial pressure (PO2 ~10% to 80% while maintaining the same total pressure of the working gas are found to be ferromagnetic at room temperature. The room temperature saturation magnetization (MS value of 2.68 emu/cm3 obtained for the MgO film deposited in PO2 of 10% increases to 9.62 emu/cm3 for film deposited at PO2 of 40%. However, the MS values decrease steadily for further increase of oxygen partial pressure during deposition. On thermal annealing at temperatures in the range 600 to 800 °C, the films become nanocrystalline and as the crystallite size grows with longer annealing times and higher temperature, MS decreases. Our study clearly points out that it is possible to tailor the magnetic properties of thin films of MgO. The room temperature ferromagnetism in MgO films is attributed to the presence of Mg cation vacancies.

  9. Ga–Ge–Te amorphous thin films fabricated by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Němec, P. [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.fr [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Equipe Verres et Céramiques, UMR-CNRS 6226, Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes 1, 35042 Rennes Cedex (France); Dussauze, M. [ISM, UMR-CNRS 5255, Université de Bordeaux, 33400 Talence (France); Ma, H.-L.; Bouyrie, Y.; Zhang, X.-H. [Equipe Verres et Céramiques, UMR-CNRS 6226, Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes 1, 35042 Rennes Cedex (France)

    2013-03-01

    UV pulsed laser deposition was employed for the fabrication of amorphous Ga–Ge–Te thin films. The local structure of the bulk glasses as well as corresponding thin films was studied using Raman scattering spectroscopy; the main structural motifs were found to be [GeTe{sub 4}], eventually [GaTe{sub 4}] corner-sharing tetrahedra and disordered Te chains. Optical functions of the films (refractive index, extinction coefficient) were characterized by variable angle spectroscopic ellipsometry. Photostability experiments showed all Ga–Ge–Te laser deposited films to be stable against 1550 nm laser irradiation in an as-deposited state. In an annealed state, the most photostable composition seems to be Ga{sub 10}Ge{sub 15}Te{sub 75}. This particular composition was further studied from the point of view of thermal stability and stability against ageing in as-deposited state. - Highlights: ► Pulsed laser deposition was used for fabrication of amorphous Ga–Ge–Te thin films. ► GeTe{sub 4}, eventually GaTe{sub 4} tetrahedra and disordered Te chains form the film structure. ► Optical functions of Ge–Ga–Te films were characterized by spectroscopic ellipsometry. ► All as-deposited Ga–Ge–Te thin films are stable against 1550 nm irradiation. ► In annealed state, the most photostable composition seems to be Ga{sub 10}Ge{sub 15}Te{sub 75}.

  10. Electrochemical properties and applications of nanocrystalline, microcrystalline, and epitaxial cubic silicon carbide films.

    Science.gov (United States)

    Zhuang, Hao; Yang, Nianjun; Zhang, Lei; Fuchs, Regina; Jiang, Xin

    2015-05-27

    Microstructures of the materials (e.g., crystallinitiy, defects, and composition, etc.) determine their properties, which eventually lead to their diverse applications. In this contribution, the properties, especially the electrochemical properties, of cubic silicon carbide (3C-SiC) films have been engineered by controlling their microstructures. By manipulating the deposition conditions, nanocrystalline, microcrystalline and epitaxial (001) 3C-SiC films are obtained with varied properties. The epitaxial 3C-SiC film presents the lowest double-layer capacitance and the highest reversibility of redox probes, because of its perfect (001) orientation and high phase purity. The highest double-layer capacitance and the lowest reversibility of redox probes have been realized on the nanocrystalline 3C-SiC film. Those are ascribed to its high amount of grain boundaries, amorphous phases and large diversity in its crystal size. Based on their diverse properties, the electrochemical performances of 3C-SiC films are evaluated in two kinds of potential applications, namely an electrochemical capacitor using a nanocrystalline film and an electrochemical dopamine sensor using the epitaxial 3C-SiC film. The nanocrystalline 3C-SiC film shows not only a high double layer capacitance (43-70 μF/cm(2)) but also a long-term stability of its capacitance. The epitaxial 3C-SiC film shows a low detection limit toward dopamine, which is one to 2 orders of magnitude lower than its normal concentration in tissue. Therefore, 3C-SiC film is a novel but designable material for different emerging electrochemical applications such as energy storage, biomedical/chemical sensors, environmental pollutant detectors, and so on.

  11. Far-infrared reflection-absorption spectroscopy of amorphous and polycrystalline gallium arsenide films

    International Nuclear Information System (INIS)

    Gregory, J.R.

    1992-01-01

    We have reported far-infrared reflection absorption spectra (30-320CM -1 ) at 30 and 310K for nine films of non-stoichiometric GaAs. The FIRRAS measurements were performed using the grazing incidence FIR double-modulation spectroscopy technique first described by DaCosta and Coleman. The films were fabricated by molecular beam deposition on metallized substrates for two As/Ga molecular beam flux ratios. The films were characterized by depth profilometry, IRAS, XRD, and x-ray microprobe analysis. Film thicknesses ranged from 800 to 5800 angstrom and compositions were 45-50% As for a MB flux ratio of 0.29 and 60-70% As for a ratio of 1.12. FIRRAS measurements were made and characterizations performed for as-deposited films and for 5 hour anneals at 473, 573, 673 and 723 degrees C. Vibrational spectra of the crystallized films were interpreted in terms of the exact reflectivity of a thin dielectric film on a conducting substrate, using a classical Lorentzian dielectric function for the response of the film. Resonances appearing in the open-quote forbidden close-quote region between the TO and LO frequencies were modelled with an effective medium approximation and are interpreted as arising from small-scale surface roughness. The behavior of the amorphous film spectra were examined within two models. The effective force constant model describes the variation of the reflection-absorption maxima with measured crystallite size in terms of the effective vibration frequency of 1-D atomic chains having force constants distributed according to the parameters of the crystalline-to-amorphous relaxation length and the crystalline to amorphous force constant ratio. The dielectric function continuum model uses the relaxation of the crystal momentum selection rule to calculate the reflection-absorption spectrum based on a dielectric function in which the oscillator strength is the normalized product of a constant dipole strength and the smoothed vibrational density of states

  12. The effect of amorphous silicon surface hydrogenation on morphology, wettability and its implication on the adsorption of proteins

    International Nuclear Information System (INIS)

    Filali, Larbi; Brahmi, Yamina; Sib, Jamal Dine; Bouhekka, Ahmed; Benlakehal, Djamel; Bouizem, Yahya; Kebab, Aissa; Chahed, Larbi

    2016-01-01

    Highlights: • Hydrogenation of the surfaces had the effect of reducing the roughness by way of shadow etching. • Roughness was the driving factor affecting the wettability of the hydrogenated surfaces. • Bovine Serum Albumin proteins favored the surfaces with highest hydrogen content. • Surface modification induced secondary structure change of adsorbed proteins. - Abstract: We study the effect of amorphous silicon (a-Si) surface hydrogenation on Bovine Serum Albumin (BSA) adsorption. A set of (a-Si) films was prepared by radio frequency magnetron sputtering (RFMS) and after deposition; they were treated in molecular hydrogen ambient at different pressures (1–3 Pa). Fourier transform infrared attenuated total reflection (FTIR-ATR) spectroscopy and spectroscopic ellipsometry (SE) were used to study the hydrogenation effect and BSA adsorption. Atomic force microscopy (AFM) was used to evaluate morphological changes caused by hydrogenation. The wettability of the films was measured using contact angle measurement, and in the case of the hydrogenated surfaces, it was found to be driven by surface roughness. FTIR-ATR spectroscopy and SE measurements show that proteins had the strongest affinity toward the surfaces with the highest hydrogen content and their secondary structure was affected by a significant decrease of the α-helix component (-27%) compared with the proteins adsorbed on the un-treated surface, which had a predominantly α-helix (45%) structure. The adsorbed protein layer was found to be densely packed with a large thickness (30.9 nm) on the hydrogen-rich surfaces. The most important result is that the surface hydrogen content was the dominant factor, compared to wettability and morphology, for protein adsorption.

  13. The effect of amorphous silicon surface hydrogenation on morphology, wettability and its implication on the adsorption of proteins

    Energy Technology Data Exchange (ETDEWEB)

    Filali, Larbi, E-mail: larbifilali5@gmail.com [Laboratoire de Physique des Couches Minces et Matériaux pour l' Electronique, Université d' Oran 1, Ahmed Ben Bella, BP 1524, El M' naouar 31100 Oran (Algeria); Brahmi, Yamina; Sib, Jamal Dine [Laboratoire de Physique des Couches Minces et Matériaux pour l' Electronique, Université d' Oran 1, Ahmed Ben Bella, BP 1524, El M' naouar 31100 Oran (Algeria); Bouhekka, Ahmed [Laboratoire de Physique des Couches Minces et Matériaux pour l' Electronique, Université d' Oran 1, Ahmed Ben Bella, BP 1524, El M' naouar 31100 Oran (Algeria); Département de Physique, Université Hassiba Ben Bouali, 02000 Chlef (Algeria); Benlakehal, Djamel; Bouizem, Yahya; Kebab, Aissa; Chahed, Larbi [Laboratoire de Physique des Couches Minces et Matériaux pour l' Electronique, Université d' Oran 1, Ahmed Ben Bella, BP 1524, El M' naouar 31100 Oran (Algeria)

    2016-10-30

    Highlights: • Hydrogenation of the surfaces had the effect of reducing the roughness by way of shadow etching. • Roughness was the driving factor affecting the wettability of the hydrogenated surfaces. • Bovine Serum Albumin proteins favored the surfaces with highest hydrogen content. • Surface modification induced secondary structure change of adsorbed proteins. - Abstract: We study the effect of amorphous silicon (a-Si) surface hydrogenation on Bovine Serum Albumin (BSA) adsorption. A set of (a-Si) films was prepared by radio frequency magnetron sputtering (RFMS) and after deposition; they were treated in molecular hydrogen ambient at different pressures (1–3 Pa). Fourier transform infrared attenuated total reflection (FTIR-ATR) spectroscopy and spectroscopic ellipsometry (SE) were used to study the hydrogenation effect and BSA adsorption. Atomic force microscopy (AFM) was used to evaluate morphological changes caused by hydrogenation. The wettability of the films was measured using contact angle measurement, and in the case of the hydrogenated surfaces, it was found to be driven by surface roughness. FTIR-ATR spectroscopy and SE measurements show that proteins had the strongest affinity toward the surfaces with the highest hydrogen content and their secondary structure was affected by a significant decrease of the α-helix component (-27%) compared with the proteins adsorbed on the un-treated surface, which had a predominantly α-helix (45%) structure. The adsorbed protein layer was found to be densely packed with a large thickness (30.9 nm) on the hydrogen-rich surfaces. The most important result is that the surface hydrogen content was the dominant factor, compared to wettability and morphology, for protein adsorption.

  14. Polycrystalline silicon thin-film solar cells with plasmonic-enhanced light-trapping.

    Science.gov (United States)

    Varlamov, Sergey; Rao, Jing; Soderstrom, Thomas

    2012-07-02

    One of major approaches to cheaper solar cells is reducing the amount of semiconductor material used for their fabrication and making cells thinner. To compensate for lower light absorption such physically thin devices have to incorporate light-trapping which increases their optical thickness. Light scattering by textured surfaces is a common technique but it cannot be universally applied to all solar cell technologies. Some cells, for example those made of evaporated silicon, are planar as produced and they require an alternative light-trapping means suitable for planar devices. Metal nanoparticles formed on planar silicon cell surface and capable of light scattering due to surface plasmon resonance is an effective approach. The paper presents a fabrication procedure of evaporated polycrystalline silicon solar cells with plasmonic light-trapping and demonstrates how the cell quantum efficiency improves due to presence of metal nanoparticles. To fabricate the cells a film consisting of alternative boron and phosphorous doped silicon layers is deposited on glass substrate by electron beam evaporation. An Initially amorphous film is crystallised and electronic defects are mitigated by annealing and hydrogen passivation. Metal grid contacts are applied to the layers of opposite polarity to extract electricity generated by the cell. Typically, such a ~2 μm thick cell has a short-circuit current density (Jsc) of 14-16 mA/cm(2), which can be increased up to 17-18 mA/cm(2) (~25% higher) after application of a simple diffuse back reflector made of a white paint. To implement plasmonic light-trapping a silver nanoparticle array is formed on the metallised cell silicon surface. A precursor silver film is deposited on the cell by thermal evaporation and annealed at 23°C to form silver nanoparticles. Nanoparticle size and coverage, which affect plasmonic light-scattering, can be tuned for enhanced cell performance by varying the precursor film thickness and its annealing

  15. Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer

    Directory of Open Access Journals (Sweden)

    Min-Hang Weng

    2014-01-01

    Full Text Available We investigated the capping layer effect of SiNx (silicon nitride on the microstructure, electrical, and optical properties of poly-Si (polycrystalline silicon prepared by aluminum induced crystallization (AIC. The primary multilayer structure comprised Al (30 nm/SiNx (20 nm/a-Si (amorphous silicon layer (100 nm/ITO coated glass and was then annealed in a low annealing temperature of 350°C with different annealing times, 15, 30, 45, and 60 min. The crystallization properties were analyzed and verified by X-ray diffraction (XRD and Raman spectra. The grain growth was analyzed via optical microscope (OM and scanning electron microscopy (SEM. The improved electrical properties such as Hall mobility, resistivity, and dark conductivity were investigated by using Hall and current-voltage (I-V measurements. The results show that the amorphous silicon film has been effectively induced even at a low temperature of 350°C and a short annealing time of 15 min and indicate that the SiNx capping layer can improve the grain growth and reduce the metal content in the induced poly-Si film. It is found that the large grain size is over 20 μm and the carrier mobility values are over 80 cm2/V-s.

  16. Morphological and optical properties of silicon thin films by PLD

    International Nuclear Information System (INIS)

    Ayouchi, R.; Schwarz, R.; Melo, L.V.; Ramalho, R.; Alves, E.; Marques, C.P.; Santos, L.; Almeida, R.; Conde, O.

    2009-01-01

    Silicon thin films have been prepared on sapphire substrates by pulsed laser deposition (PLD) technique. The films were deposited in vacuum from a silicon target at a base pressure of 10 -6 mbar in the temperature range from 400 to 800 deg. C. A Q-switched Nd:YAG laser (1064 nm, 5 ns duration, 10 Hz) at a constant energy density of 2 J x cm -2 has been used. The influence of the substrate temperature on the structural, morphological and optical properties of the Si thin films was investigated. Spectral ellipsometry and atomic force microscopy (AFM) were used to study the thickness and the surface roughness of the deposited films. Surface roughness values measured by AFM and ellipsometry show the same tendency of increasing roughness with increased deposition temperature

  17. Microstructured silicone substrate for printable and stretchable metallic films.

    Science.gov (United States)

    Robinson, Adam P; Minev, Ivan; Graz, Ingrid M; Lacour, Stéphanie P

    2011-04-19

    Stretchable electronics (i.e., hybrid inorganic or organic circuits integrated on elastomeric substrates) rely on elastic wiring. We present a technique for fabricating reversibly stretchable metallic films by printing silver-based ink onto microstructured silicone substrates. The wetting and pinning of the ink on the elastomer surface is adjusted and optimized by varying the geometry of micropillar arrays patterned on the silicone substrate. The resulting films exhibit high electrical conductivity (∼11 000 S/cm) and can stretch reversibly to 20% strain over 1000 times without failing electrically. The stretchability of the ≥200 nm thick metallic film relies on engineered strain relief in the printed film on patterned PDMS. © 2011 American Chemical Society

  18. Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Aikawa, Shinya, E-mail: aikawa@cc.kogakuin.ac.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Research Institute for Science and Technology, Kogakuin University, Hachioji, Tokyo 192-0015 (Japan); Mitoma, Nobuhiko; Kizu, Takio; Tsukagoshi, Kazuhito, E-mail: aikawa@cc.kogakuin.ac.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan)

    2015-05-11

    We discuss the environmental instability of amorphous indium oxide (InO{sub x})-based thin-film transistors (TFTs) in terms of the excess oxygen in the semiconductor films. A comparison between amorphous InO{sub x} doped with low and high concentrations of oxygen binder (SiO{sub 2}) showed that out-diffusion of oxygen molecules causes drastic changes in the film conductivity and TFT turn-on voltages. Incorporation of sufficient SiO{sub 2} could suppress fluctuations in excess oxygen because of the high oxygen bond-dissociation energy and low Gibbs free energy. Consequently, the TFT operation became rather stable. The results would be useful for the design of reliable oxide TFTs with stable electrical properties.

  19. Optical characterization of the coloration process in electrochromic amorphous and crystalline WO3 films by spectroscopic ellipsometry

    Science.gov (United States)

    Yuan, Guangzhong; Hua, Chenzheng; Huang, Li; Defranoux, Christophe; Basa, Peter; Liu, Yong; Song, Chenlu; Han, Gaorong

    2017-11-01

    Amorphous and crystalline electrochromic WO3 films exhibit quite different optical properties during coloration process. In the present work, amorphous and crystalline electrochromic WO3 films prepared by a solution method were characterized using X-ray diffraction, scanning electron microscope, and transmission electron microscope techniques. A double-layer model with sharp interfaces was established for the fitting of the ellipsometry parameters. The results show that the proton favors amorphous films more than crystalline WO3 films. The refractive indices of both amorphous and polycrystalline WO3 films decrease while extinction coefficients increase with the inserting of H+ during the coloration process. But the optical parameters of the latter are much more sensitive to the H+ ions injected compared to the amorphous WO3 during the coloration process. That is the refractive index modulation of the crystalline WO3 films is about 53% at 633 nm while that of the amorphous films about 15% at the same wavelength. The Drude-like free electron model for crystalline WO3 and hopping mechanism of small polaron for amorphous WO3 are used to explain the difference in detail. These results are very helpful for the better understanding of the coloration process and for the design of electrochromic devices.

  20. Evidence for the concentration induced extinction of gas sensitivity in amorphous and nanostructured Te thin films

    International Nuclear Information System (INIS)

    Tsiulyanu, D.; Mocreac, O.; Enachi, M.; Volodina, G.

    2013-01-01

    The extinction of sensitivity to nitrogen dioxide induced by high gas concentration have been observed in ultrathin tellurium films. The phenomenon becomes apparent in both continuous and nanostructured films shown by AFM, SEM and XRD analyses to be in amorphous state. Sensitivity of 30 nm thickness Te film decreases near linearly with concentration increase between 150 and 500 ppb of nitrogen dioxide. The results are explained in terms of formation of a nitrogen dioxide catalytic gate in which a molecule adsorbs (and desorbs) without reacting. (authors)

  1. Evaluation of optical properties of the amorphous carbon film on fused silica

    International Nuclear Information System (INIS)

    Baydogan, Nilguen Dogan

    2004-01-01

    Deposition was done using a pulsed filtered cathodic arc with a graphite cathode. The carbon plasma is fully ionised and condenses on the substrate, forming diamond-like material but with amorphous structure. Optical properties of amorphous carbon films on fused-silica glass were investigated and the curves of optical density have a characteristic band at approximately 950 nm. Changes of the colourimetric quantities were evaluated and compared to uncoated fused silica glass. These changes were investigated as a function of the applied substrate bias voltage using the CIE and CIELAB colour systems. It is suggested that the mechanism of absorption is related to an allowed direct transition at the amorphous carbon films on fused silica glass. The optical energy gap of the amorphous carbon film depends on the bias voltage applied to the substrate holder. The optical colour parameters and optical band gap indicated that there is a relation between the dominant wavelength of the reflectance in the visible range and the wavelength of the optical band gap

  2. Non-localized deformation in Cu−Zr multi-layer amorphous films under tension

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, C. [International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Materials, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Zhang, H. [International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Materials, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 1H9 (Canada); Cao, Q.P.; Wang, X.D. [International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Materials, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Zhang, D.X. [State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027 (China); Hu, J.W. [Hangzhou Workers Amateur University, Hangzhou 310027 (China); Liaw, P.K. [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 (United States); Jiang, J.Z., E-mail: jiangjz@zju.edu.cn [International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Materials, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2016-09-05

    In metallic glasses (MGs), plastic deformation at room temperature is dominated by highly localized shear bands. Here we report the non-localized deformation under tension in Cu−Zr multi-layer MGs with a pure amorphous structure using large-scale atomistic simulations. It is demonstrated that amorphous samples with high layer numbers, composed of Cu{sub 64}Zr{sub 36} and Cu{sub 40}Zr{sub 60}, or Cu{sub 64}Zr{sub 36} and Cu{sub 50}Zr{sub 50}, present obviously non-localized deformation behavior. We reveal that the deformation behavior of the multi-layer-structured MG films is related but not determined by the deformation behavior of the composed individual layers. The criterion for the deformation mode change for MGs with a pure amorphous structure, in generally, was suggested, i.e., the competition between the elastic-energy density stored and the energy density needed for forming one mature shear band in MGs. Our results provide a promising strategy for designing tensile ductile MGs with a pure amorphous structure at room temperature. - Highlights: • Tensile deformation behaviors in multi-layer MG films. • Films with high layer numbers confirmed with a non-localized deformation behavior. • The deformation mode is reasonably controlled by whether U{sub p} larger than U{sub SB.}.

  3. Predicting the performance of amorphous and crystalline silicon based photovoltaic solar thermal collectors

    International Nuclear Information System (INIS)

    Daghigh, Ronak; Ibrahim, Adnan; Jin, Goh Li; Ruslan, Mohd Hafidz; Sopian, Kamaruzzaman

    2011-01-01

    BIPVT is an application where solar PV/T modules are integrated into the building structure. System design parameters such as thermal conductivity and fin efficiency, type of cells, type of coolant and operating conditions are factors which influence the performance of BIPVT. Attempts have been made to improve the efficiency of building-integrated photovoltaic thermal (BIPVT). A new design concept of water-based PVT collector for building-integrated applications has been designed and evaluated. The results of simulation study of amorphous silicon (a-Si) PV/T and crystalline silicon (c-Si) module types are based on the metrological condition of Malaysia for a typical day in March. At a flow rate of 0.02 kg/s, solar radiation level between 700 and 900 W/m 2 and ambient temperature between 22 and 32 o C, the electrical, thermal and combined photovoltaic thermal efficiencies for the PV/T (a-Si) were 4.9%, 72% and 77%, respectively. Moreover, the electrical, thermal and combined photovoltaic thermal efficiencies of the PV/T (c-Si) were 11.6%, 51% and 63%.

  4. Microstructure from joint analysis of experimental data and ab initio interactions: Hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Biswas, Parthapratim, E-mail: Partha.Biswas@usm.edu [Department of Physics and Astronomy, The University of Southern Mississippi, Hattiesburg, MS 39406 (United States); Department of Physics and Astronomy, Condensed Matter and Surface Science Program, Ohio University, Ohio 45701 (United States); Drabold, D. A., E-mail: drabold@ohio.edu [Department of Physics and Astronomy, Condensed Matter and Surface Science Program, Ohio University, Ohio 45701 (United States); Atta-Fynn, Raymond, E-mail: attafynn@uta.edu [Department of Physics, The University of Texas, Arlington, Texas 76019 (United States)

    2014-12-28

    A study of the formation of voids and molecular hydrogen in hydrogenated amorphous silicon is presented based upon a hybrid approach that involves inversion of experimental nuclear magnetic resonance data in conjunction with ab initio total-energy relaxations in an augmented solution space. The novelty of this approach is that the voids and molecular hydrogen appear naturally in the model networks unlike conventional approaches, where voids are created artificially by removing silicon atoms from the networks. Two representative models with 16 and 18 at. % of hydrogen are studied in this work. The result shows that the microstructure of the a-Si:H network consists of several microvoids and few molecular hydrogen for concentration above 15 at. % H. The microvoids are highly irregular in shape and size, and have a linear dimension of 5–7 Å. The internal surface of a microvoid is found to be decorated with 4–9 hydrogen atoms in the form of monohydride Si–H configurations as observed in nuclear magnetic resonance experiments. The microstructure consists of (0.9–1.4)% hydrogen molecules of total hydrogen in the networks. These observations are consistent with the outcome of infrared spectroscopy, nuclear magnetic resonance, and calorimetry experiments.

  5. Deposition of magnetoelectric hexaferrite thin films on substrates of silicon

    Energy Technology Data Exchange (ETDEWEB)

    Zare, Saba; Izadkhah, Hessam; Vittoria, Carmine

    2016-12-15

    Magnetoelectric M-type hexaferrite thin films (SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19}) were deposited using Pulsed Laser Deposition (PLD) technique on Silicon substrate. A conductive oxide layer of Indium-Tin Oxide (ITO) was deposited as a buffer layer with the dual purposes of 1) to reduce lattice mismatch between the film and silicon and 2) to lower applied voltages to observe magnetoelectric effects at room temperature on Silicon based devices. The film exhibited magnetoelectric effects as confirmed by vibrating sample magnetometer (VSM) techniques in voltages as low as 0.5 V. Without the oxide conductive layer the required voltages to observe magnetoelectric effects was typically about 1000 times larger. The magnetoelectric thin films were characterized by X-ray diffractometer, scanning electron microscope, energy-dispersive spectroscopy, vibrating sample magnetometer, and ferromagnetic resonance techniques. We measured saturation magnetization of 650 G, and coercive field of about 150 Oe for these thin films. The change in remanence magnetization was measured in the presence of DC voltages and the changes in remanence were in the order of 15% with the application of only 0.5 V (DC voltage). We deduced a magnetoelectric coupling, α, of 1.36×10{sup −9} s m{sup −1} in SrCo{sub 2}Ti{sub 2}Fe{sub 8}O{sub 19} thin films.

  6. Conciliating surface superhydrophobicities and mechanical strength of porous silicon films

    Science.gov (United States)

    Wang, Fuguo; Zhao, Kun; Cheng, Jinchun; Zhang, Junyan

    2011-01-01

    Hydrophobic surfaces on Mechanical stable macroporous silicon films were prepared by electrochemical etching with subsequent octadecyltrichlorosilane (OTS) modification. The surface morphologies were controlled by current densities and the mechanical properties were adjusted by their corresponding porosities. Contrast with the smooth macroporous silicon films with lower porosities (34.1%) and microporous silicon with higher porosities (97%), the macroporous film with a rough three-dimension (3D) surface and a moderate pore to cross-section area ratio (37.8%, PSi2‧) exhibited both good mechanical strength (Yong' modulus, shear modulus and collapse strength are 64.2, 24.1 and 0.32 GPa, respectively) and surface superhydrophobicity (water contact angle is 158.4 ± 2° and sliding angle is 2.7 ± 1°). This result revealed that the surface hydrophobicities (or the surface roughness) and mechanical strength of porous films could be conciliated by pore to cross-section area ratios control and 3D structures construction. Thus, the superhydrophobic surfaces on mechanical stable porous films could be obtained by 3D structures fabrication on porous film with proper pore to cross-section area ratios.

  7. Combining light-harvesting with detachability in high-efficiency thin-film silicon solar cells.

    Science.gov (United States)

    Ram, Sanjay K; Desta, Derese; Rizzoli, Rita; Bellettato, Michele; Lyckegaard, Folmer; Jensen, Pia B; Jeppesen, Bjarke R; Chevallier, Jacques; Summonte, Caterina; Larsen, Arne Nylandsted; Balling, Peter

    2017-06-01

    Efforts to realize thin-film solar cells on unconventional substrates face several obstacles in achieving good energy-conversion efficiency and integrating light-management into the solar cell design. In this report a technique to circumvent these obstacles is presented: transferability and an efficient light-harvesting scheme are combined for thin-film silicon solar cells by the incorporation of a NaCl layer. Amorphous silicon solar cells in p-i-n configuration are fabricated on reusable glass substrates coated with an interlayer of NaCl. Subsequently, the solar cells are detached from the substrate by dissolution of the sacrificial NaCl layer in water and then transferred onto a plastic sheet, with a resultant post-transfer efficiency of 9%. The light-trapping effect of the surface nanotextures originating from the NaCl layer on the overlying solar cell is studied theoretically and experimentally. The enhanced light absorption in the solar cells on NaCl-coated substrates leads to significant improvement in the photocurrent and energy-conversion efficiency in solar cells with both 350 and 100 nm thick absorber layers, compared to flat-substrate solar cells. Efficient transferable thin-film solar cells hold a vast potential for widespread deployment of off-grid photovoltaics and cost reduction.

  8. Synthesis and corrosion properties of silicon nitride films by ion beam assisted deposition

    Science.gov (United States)

    Baba, K.; Hatada, R.; Emmerich, R.; Enders, B.; Wolf, G. K.

    1995-12-01

    Silicon nitride films SiN x were deposited on 316L austenitic stainless steel substrates by silicon evaporation and simultaneous nitrogen ion irradiation with an acceleration voltage of 2 kV. In order to study the influence of the nitrogen content on changes in stoichiometry, structure, morphology, thermal oxidation behaviour and corrosion behaviour, the atom to ion transport ratio was systematically varied. The changes of binding states and the stoichiometry were evaluated with XPS and AES analysis. A maximum nitrogen content was reached with a {Si}/{N} transport ratio lower than 2. The films are chemically inert when exposed to laboratory atmosphere up to a temperature of more than 1000°C. XRD and SEM measurements show amorphous and featureless films for transport ratios {Si}/{N} from 1 up to 10. The variation of the corrosion behaviour of coated stainless steel substrates in sulphuric acid and hydrochloric acid shows a minimum at medium transport ratios. This goes parallel with changes in porosity and adhesion. Additional investigations showed that titanium implantation as an intermediate step improves the corrosion resistance considerably.

  9. The effect of Argon ion irradiation on the thickness and structure of ultrathin amorphous carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Xie, J.; Komvopoulos, K., E-mail: kyriakos@me.berkeley.edu [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)

    2016-03-07

    Carbon films synthesized by plasma-enhanced chemical vapor deposition (PECVD) and filtered cathodic vacuum arc (FCVA) exhibit a layered structure consisting of a bottom (interface) and a top (surface) layer rich in sp{sup 2} atomic carbon bonding and a middle (bulk) layer of much higher sp{sup 3} content. Because of significant differences in the composition, structure, and thickness of these layers, decreasing the film thickness may negatively affect its properties. In this study, transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) were used to examine the effect of Ar{sup +} ion irradiation on the structure and thickness of ultrathin films of hydrogenated amorphous carbon (a-C:H) and hydrogen-free amorphous carbon (a-C) deposited by PECVD and FCVA, respectively. The TEM and EELS results show that 2-min ion irradiation decreases the film thickness without markedly changing the film structure and composition, whereas 4-min ion irradiation results in significant film thinning and a moderate decrease of the sp{sup 3} content of the bulk layer. This study demonstrates that Ar{sup +} ion irradiation is an effective post-deposition process for reducing the thickness and tuning the structure of ultrathin carbon films. This capability has direct implications in the synthesis of ultrathin protective carbon overcoats for extremely high-density magnetic recording applications.

  10. Structure and electronic properties features of amorphous chalhogenide semiconductor films prepared by ion-plasma spraying

    Energy Technology Data Exchange (ETDEWEB)

    Korobova, N., E-mail: korobova3@mail.ru; Timoshenkov, S. [Department of Microelectronics, National Research University of Electronic Technology (MIET), Zelenograd (Russian Federation); Almasov, N.; Prikhodko, O. [al-Farabi Kazakh National University, Almaty (Kazakhstan); Tsendin, K. [Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2014-10-21

    Structure of amorphous chalcogenide semiconductor glassy As-S-Se films, obtained by high-frequency (HF) ion-plasma sputtering has been investigated. It was shown that the length of the atomic structure medium order and local structure were different from the films obtained by thermal vacuum evaporation. Temperature dependence of dark conductivity, as well as the dependence of the spectral transmittance has been studied. Conductivity value was determined at room temperature. Energy activation conductivity and films optical band gap have been calculated. Temperature and field dependence of the drift mobility of charge carriers in the HF As-S-Se films have been shown. Bipolarity of charge carriers drift mobility has been confirmed. Absence of deep traps for electrons in the As{sub 40}Se{sub 30}S{sub 30} spectrum of localized states for films obtained by HF plasma ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As{sub 40}Se{sub 30}S{sub 30} films obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.

  11. Synthesis and characterization of thin films of nitrided amorphous carbon deposited by laser ablation

    International Nuclear Information System (INIS)

    Rebollo P, B.

    2001-01-01

    The objective of this work is the synthesis and characterization of thin films of amorphous carbon (a-C) and thin films of nitrided amorphous carbon (a-C-N) using the laser ablation technique for their deposit. For this purpose, the physical properties of the obtained films were studied as function of diverse parameters of deposit such as: nitrogen pressure, power density, substrate temperature and substrate-target distance. For the characterization of the properties of the deposited thin films the following techniques were used: a) Raman spectroscopy which has demonstrated being a sensitive technique to the sp 2 and sp 3 bonds content, b) Energy Dispersive Spectroscopy which allows to know semi-quantitatively way the presence of the elements which make up the deposited films, c) Spectrophotometry, for obtaining the absorption spectra and subsequently the optical energy gap of the deposited material, d) Ellipsometry for determining the refraction index, e) Scanning Electron Microscopy for studying the surface morphology of thin films and, f) Profilemetry, which allows the determination the thickness of the deposited thin films. (Author)

  12. Magnetic and Electric Properties of Amorphous Co40Fe40B20 Thin Films

    Directory of Open Access Journals (Sweden)

    Yuan-Tsung Chen

    2012-01-01

    Full Text Available C40Fe40B20 was deposited on a glass substrate to a thickness (tf of between 100 Å and 500 Å. X-ray diffraction patterns (XRD indicate that C40Fe40B20 films are in an amorphous state. The plane-view microstructures and grain size distributions of CoFeB thin films are observed under a high-resolution transmission electron microscope (HRTEM. The thicker CoFeB films have larger grain size distribution than thinner CoFeB films. The saturation magnetization (Ms exhibits a size effect, meaning that Ms increases as tf increases. The magnetic remanence magnetization (Mr of CoFeB thin films are sensitive to thinner CoFeB films, and the refined grain size of thinner CoFeB films can induce ferromagnetic stronger spin exchange-coupling behavior than thicker CoFeB films, resulting in higher remanence. The highest magnetic squareness ratio (Mr/Ms of the CoFeB films occurs at thickness of 100 Å, suggesting the 100 Å of the as-deposited CoFeB film is suitable for magnetic memory application. These results also demonstrate that coercivity (Hc is increased by an increase in the width of the distribution of grain sizes. The electrical resistivity (ρ of such a film is typically higher than normally exceeding 100 μΩ cm, revealing that the amorphous phase dominates. These results are consistent with the XRD results.

  13. Optical and structural characterization of silicon-carbon-nitride thin films for optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Swatowska, Barbara; Stapinski, Tomasz [Department of Electronics, AGH University of Science and Technology, Krakow (Poland)

    2010-04-15

    Amorphous a-SiCN:H films were deposited by radio frequency Plasma Enhanced Chemical Vapour Deposition (PECVD) at 13.56 MHz from silane-methane-ammonia (SiH{sub 4}+CH{sub 4}+NH{sub 3}) gaseous mixture. Morphological, structural and optical characterization of a-SiCN:H in correlation with process parameters was done. High growth rate of films was influenced mainly by presence of ammonia and silane in technological process. FTIR spectra analysis of films revealed the influence of gaseous mixture content in PECVD process on their structure. The refractive index and optical gap depended on elemental composition of films. The total reflectivity of a-SiCN:H on monocrystalline silicon revealed increase with the decrease in carbon and nitrogen content. The a-SiCN:H films are smooth, homogeneous, chemically inert and wear resistive and also hydrogen rich, which is important from the application point of view (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  15. Thin-film resistance thermometers on silicon wafers

    International Nuclear Information System (INIS)

    Kreider, Kenneth G; Ripple, Dean C; Kimes, William A

    2009-01-01

    We have fabricated Pt thin-film resistors directly sputtered on silicon substrates to evaluate their use as resistance thermal detectors (RTDs). This technique was chosen to achieve more accurate temperature measurements of large silicon wafers during semiconductor processing. High-purity (0.999 968 mass fraction) platinum was sputter deposited on silicon test coupons using titanium and zirconium bond coats. These test coupons were annealed, and four-point resistance specimens were prepared for thermal evaluation. Their response was compared with calibrated platinum–palladium thermocouples in a tube furnace. We evaluated the effects of furnace atmosphere, thin-film thickness, bond coats, annealing temperature and peak thermal excursion of the Pt thin films. Secondary ion mass spectrometry (SIMS) was performed to evaluate the effect of impurities on the thermal resistance coefficient, α. We present typical resistance versus temperature curves, hysteresis plots versus temperature and an analysis of the causes of uncertainties in the measurement of seven test coupons. We conclude that sputtered thin-film platinum resistors on silicon wafers can yield temperature measurements with uncertainties of less than 1 °C, k = 1 up to 600 °C. This is comparable to or better than commercially available techniques

  16. Transparent conducting oxide layers for thin film silicon solar cells

    NARCIS (Netherlands)

    Rath, J.K.; Liu, Y.; de Jong, M.M.; de Wild, J.; Schuttauf, J.A.; Brinza, M.; Schropp, R.E.I.

    2009-01-01

    Texture etching of ZnO:1%Al layers using diluted HCl solution provides excellent TCOs with crater type surface features for the front contact of superstrate type of thin film silicon solar cells. The texture etched ZnO:Al definitely gives superior performance than Asahi SnO2:F TCO in case of

  17. Deposition of silicon films in presence of nitrogen plasma— A ...

    Indian Academy of Sciences (India)

    Unknown

    physical and process related parameters are changed. The grown films are characterized using X-ray ... Silicon nitride is one of the promising materials for numerous applications in the semiconductor industry ... Compared to reactive sputtering, this method offers advantages of low power levels, higher deposition rates and ...

  18. Thick amorphous silicon layers suitable for the realization of radiation detectors

    International Nuclear Information System (INIS)

    Hong, Wan-Shick; Drewery, J.S.; Jing, Tao; Lee, Hyong-Koo; Perez-Mendez, V.; Petrova-Koch, V.

    1995-04-01

    Thick silicon films with good electronic quality have been prepared by glow discharge of He-diluted SiH 4 at a substrate temperature ∼ 150 degree C and subsequent annealing at 160 degree C for about 100 hours. The stress in the films obtained this way decreased to ∼ 100 MPa compared to the 350 MPa in conventional a-Si:H. The post-annealing helped to reduce the ionized dangling bond density from 2.5 x 10 15 cm -3 to 7 x 10 14 cm -3 without changing the internal stress. IR spectroscopy and hydrogen effusion measurements implied the existence of microvoids and tiny crystallites in the material showing satisfactory electronic properties. P-I-N diodes for radiation detection applications have been realized out of the new material

  19. Hybrid Si nanowire/amorphous silicon FETs for large-area image sensor arrays.

    Science.gov (United States)

    Wong, William S; Raychaudhuri, Sourobh; Lujan, René; Sambandan, Sanjiv; Street, Robert A

    2011-06-08

    Silicon nanowire (SiNW) field-effect transistors (FETs) were fabricated from nanowire mats mechanically transferred from a donor growth wafer. Top- and bottom-gate FET structures were fabricated using a doped a-Si:H thin film as the source/drain (s/d) contact. With a graded doping profile for the a-Si:H s/d contacts, the off-current for the hybrid nanowire/thin-film devices was found to decrease by 3 orders of magnitude. Devices with the graded contacts had on/off ratios of ∼10(5), field-effect mobility of ∼50 cm(2)/(V s), and subthreshold swing of 2.5 V/decade. A 2 in. diagonal 160 × 180 pixel image sensor array was fabricated by integrating the SiNW backplane with an a-Si:H p-i-n photodiode.

  20. Hydrogen in disordered and amorphous solids

    International Nuclear Information System (INIS)

    Bambakidis, G; Bowman, R.C.

    1986-01-01

    This book presents information on the following topoics: elements of the theory of amorphous semiconductors; electronic structure of alpha-SiH; fluctuation induced gap states in amorphous hydrogenated silicon; hydrogen on semiconductor surfaces; the influence of hydrogen on the defects and instabilities in hydrogenated amorphous silicon; deuteron magnetic resonance in some amorphous semiconductors; formation of amorphous metals by solid state reactions of hydrogen with an intermetallic compound; NMR studies of the hydrides of disordered and amorphous alloys; neutron vibrational spectroscopy of disordered metal-hydrogen system; dynamical disorder of hydrogen in LaNi /SUB 5-y/ M /SUB y/ hydrides studied by quasi-elastic neutron scattering; recent studies of intermetallic hydrides; tritium in Pd and Pd /SUB 0.80/ Sg /SUB 0.20/ ; and determination of hydrogen concentration in thin films of absorbing materials

  1. 1D - photonic crystals prepared from the amorphous chalcogenide films

    Czech Academy of Sciences Publication Activity Database

    Kohoutek, T.; Orava, J.; Wágner, T.; Hrdlička, M.; Vlček, Milan; Frumar, M.

    2009-01-01

    Roč. 20, - (2009), S346-S350 ISSN 0957-4522. [International Conference of Optical and Optoelectronic Materials and Applications. London, 29.07.2007-03.08.2007] Institutional research plan: CEZ:AV0Z40500505 Keywords : chalcogenide thin films Subject RIV: CA - Inorganic Chemistry Impact factor: 1.020, year: 2009

  2. Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride.

    Science.gov (United States)

    Kischkat, Jan; Peters, Sven; Gruska, Bernd; Semtsiv, Mykhaylo; Chashnikova, Mikaela; Klinkmüller, Matthias; Fedosenko, Oliana; Machulik, Stephan; Aleksandrova, Anna; Monastyrskyi, Gregorii; Flores, Yuri; Masselink, W Ted

    2012-10-01

    The complex refractive index components, n and k, have been studied for thin films of several common dielectric materials with a low to medium refractive index as functions of wavelength and stoichiometry for mid-infrared (MIR) wavelengths within the range 1.54-14.29 μm (700-6500 cm(-1)). The materials silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, and titanium oxide are prepared using room temperature reactive sputter deposition and are characterized using MIR variable angle spectroscopic ellipsometry. The investigation shows how sensitive the refractive index functions are to the O2 and N2 flow rates, and for which growth conditions the materials deposit homogeneously. It also allows conclusions to be drawn on the degree of amorphousness and roughness. To facilitate comparison of the materials deposited in this work with others, the index of refraction was also determined and provided for the near-IR and visible ranges of the spectrum. The results presented here should serve as a useful information base for designing optical coatings for the MIR part of the electromagnetic spectrum. The results are parameterized to allow them to be easily used for coating design.

  3. Deposit of thin films of nitrided amorphous carbon using the laser ablation technique

    International Nuclear Information System (INIS)

    Rebollo, P.B.; Escobar A, L.; Camps C, E.; Haro P, E.; Camacho L, M.A.; Muhl S, S.

    2000-01-01

    It is reported the synthesis and characterization of thin films of amorphous carbon (a-C) nitrided, deposited by laser ablation in a nitrogen atmosphere at pressures which are from 4.5 x 10 -4 Torr until 7.5 x 10 -2 Torr. The structural properties of the films are studied by Raman spectroscopy obtaining similar spectra at the reported for carbon films type diamond. The study of behavior of the energy gap and the ratio nitrogen/carbon (N/C) in the films, shows that the energy gap is reduced when the nitrogen incorporation is increased. It is showed that the refraction index of the thin films diminish as nitrogen pressure is increased, indicating the formation of graphitic material. (Author)

  4. Electrical and switching properties of InSe amorphous thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kenawy, M.A.; Zayed, H.A.; El-Zahid, H.A. (Univ. Coll. for Girls, Ain Shams Univ., Cairo (Egypt)); El-Shazly, A.F.; Afifi, M.A. (Faculty of Education, Ain Shams Univ., Cairo (Egypt))

    1991-05-15

    In this work electrical and switching properties of InSe thin films have been studied. The semiconductor compound InSe was obtained by direct synthesis from stoichiometric amounts of spectroscopically pure indium and selenium. By slow cooling of the synthesized InSe a polycrystalline material is obtained. The amorphous films were obtained by thermal evaporation under vacuum of the polycrystalline material on glass or pyrographite substrates. From electrical measurements, it was found that for all films the dark electrical resistivity decreases with an increase in film thickness and temperature. The InSe compound exhibits non-linear I-V characteristics and switching phenomena. The threshold voltage decreases with increasing annealing temperature and increases with increasing film thickness. (orig.).

  5. Silicon nanocrystals embedded in oxide films grown by magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Caroline Bonafos

    2016-05-01

    Full Text Available This paper presents a comparison of the results that we obtained and reported over the last few years on the structural, optical and light emitting properties of Si-SiO2 and Si-Al2O3 films that were fabricated using a specific configuration of RF magnetron sputtering. In these films the Si volume fraction, x, varies along the film (which is typically 14 cm long from a value of ~0.1 at one end to ~0.9 at the other end. For the films with x > 0.3, the formation of amorphous Si clusters was observed in as-deposited Si-SiO2 and Si-Al2O3 films. Si nanocrystals (Si-ncs were generated by high-temperature annealing of the films in nitrogen atmosphere. We found that two processes can contribute to the Si-ncs formation: (i the crystallization of the existing amorphous Si inclusions in the as-deposited films, and (ii the thermally stimulated phase separation. Process (i can be responsible for the independence of Si-ncs mean sizes on x in annealed films with x > 0.5. At the same time, difference in the structural and the light emitting properties of the two types of films was observed. For the samples of the same x, the Si-ncs embedded in the Al2O3 host were found to be larger than the Si-ncs in the SiO2 host. This phenomenon can be explained by the lower temperature required for phase separation in Si-Al2O3 or by the lower temperature of the crystallization of Si-ncs in alumina. The latter suggestion is supported by Raman scattering and electron paramagnetic resonance spectra. In contrast with the Si-SiO2, the Si-ncs embedded in Si-Al2O3 films were found to be under tensile stress. This effect was explained by the strains at the interfaces between the film and silica substrate as well as between the Si inclusions and the Al2O3 host. It was also shown that exciton recombination in Si-ncs is the dominant radiative channel in Si-SiO2 films, while the emission from the oxide defects dominates in Si-Al2O3 films. This can be due to the high number of non

  6. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  7. Correlation between substrate bias, growth process and structural properties of phosphorus incorporated tetrahedral amorphous carbon films

    International Nuclear Information System (INIS)

    Liu Aiping; Zhu Jiaqi; Han Jiecai; Wu Huaping; Jia Zechun

    2007-01-01

    We investigate the growth process and structural properties of phosphorus incorporated tetrahedral amorphous carbon (ta-C:P) films which are deposited at different substrate biases by filtered cathodic vacuum arc technique with PH 3 as the dopant source. The films are characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy, Raman spectroscopy, residual stress measurement, UV/VIS/NIR absorption spectroscopy and temperature-dependent conductivity measurement. The atomic fraction of phosphorus in the films as a function of substrate bias is obtained by XPS analysis. The optimum bias for phosphorus incorporation is about -80 V. Raman spectra show that the amorphous structures of all samples with atomic-scaled smooth surface are not remarkably changed when PH 3 is implanted, but some small graphitic crystallites are formed. Moreover, phosphorus impurities and higher-energetic impinging ions are favorable for the clustering of sp 2 sites dispersed in sp 3 skeleton and increase the level of structural ordering for ta-C:P films, which further releases the compressive stress and enhances the conductivity of the films. Our analysis establishes an interrelationship between microstructure, stress state, electrical properties, and substrate bias, which helps to understand the deposition mechanism of ta-C:P films

  8. Silicon nanocrystal films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Lechner, Robert W.

    2009-02-06

    Whether nanoparticles of silicon are really suited for such applications, whether layers fabricated from this exhibit semiconducting properties, whether they can be doped, and whether for instance via the doping the conductivity can be tuned, was studied in the present thesis. Starting material for this were on the one hand spherical silicon nanocrystals with a sharp size distribution and mean diameters in the range from 4-50 nm. Furthermore silicon particle were available, which are with 50-500 nm distinctly larger and exhibit a broad distribution of the mean size and a polycrystalline fine structure with strongly bifurcated external morphology. The small conductivities and tje low mobility values of the charge carriers in the layers of silicon nanocrystals suggest to apply suited thermal after-treatment procedures. So was found that the aluminium-induced layer exchange (ALILE) also can be transferred to the porous layers of nanocrystals. With the deuteron passivation a method was available to change the charge-carrier concentration in the polycrystalline layers. Additionally to ALILE laser crystallization as alternative after-treatment procedure of the nanocrystal layers was studied.

  9. Colour centres in amorphous tungsten trioxide thin films

    International Nuclear Information System (INIS)

    Kleperis, J.J.; Cikmach, P.D.; Lusis, A.R.

    1984-01-01

    Magnetic, optical, and electrical properties of thin tungsten trioxide (a-WO 3 ) films obtained on substrates with different temperatures and annealed in air and vacuum are investigated. On the basis of these results and recent structural investigations a structure model of the a-WO 3 film is given: a spatial network of tightly bounded clusters which are built from hydrated WO 6 octahedra. These octahedra contain terminal oxygens and being axially distorted they are the sites for localization of injected electrons. The colour centres formed are paramagnetic (ESR signal from W 5+ ) and their optical absorption is satisfactorily described by the intervalence charge transfer between the localized states of W 5+ and W 6+ ions. (author)

  10. Observation by conductive-probe atomic force microscopy of strongly inverted surface layers at the hydrogenated amorphous silicon/crystalline silicon heterojunctions

    Science.gov (United States)

    Maslova, O. A.; Alvarez, J.; Gushina, E. V.; Favre, W.; Gueunier-Farret, M. E.; Gudovskikh, A. S.; Ankudinov, A. V.; Terukov, E. I.; Kleider, J. P.

    2010-12-01

    Heterojunctions made of hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) are examined by conducting probe atomic force microscopy. Conductive channels at both (n )a-Si:H/(p)c-Si and (p)a-Si:H/(n)c-Si interfaces are clearly revealed. These are attributed to two-dimension electron and hole gases due to strong inversion layers at the c-Si surface in agreement with previous planar conductance measurements. The presence of a hole gas in (p )a-Si:H/(n)c-Si structures implies a quite large valence band offset (EVc-Si-EVa-Si:H>0.25 eV).

  11. Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature

    CERN Document Server

    Park, M G; Hong, B; Kim, Y T; Yoon, D H

    2002-01-01

    In this article, we investigated the dependence of optical and electrical properties of hydrogenated amorphous silicon carbide (a-SiC:H) films on annealing temperature (T sub a) and radio frequency (rf) power. The substrate temperature (T sub s) was 250 deg. C, the rf power was varied from 30 to 400 W, and the range of T sub a was from 400 to 600 deg. C. The a-SiC:H films were deposited by using the plasma enhanced chemical vapor deposition system on Corning 7059 glasses and p-type Si (100) wafers with a SiH sub 4 +CH sub 4 gas mixture. The experimental results have shown that the optical bandgap energy (E sub g) of the a-SiC:H thin films changed little on the annealing temperature while E sub g increased with the rf power. The Raman spectrum of the thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs. The current-voltage characteristics have shown good electrical properties in relation to the annealed films.

  12. Gallium-lanthanum-sulphide amorphous thin films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Nemec, P., E-mail: Petr.Nemec@upce.cz [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210 Pardubice (Czech Republic); Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.fr [Equipe Verres et Ceramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Universite de Rennes 1, 35042 Rennes (France); Pavlista, M., E-mail: martin.pavlista@upce.cz [Department of Physics, Faculty of Chemical Technology, University of Pardubice, Studentska 84, 53210 Pardubice (Czech Republic); Moreac, A., E-mail: alain.moreac@univ-rennes1.fr [GMCM, UMR-CNRS 6626, Universite de Rennes 1, 35042 Rennes (France); Frumar, M., E-mail: miloslav.frumar@upce.cz [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210 Pardubice (Czech Republic); Vlcek, M., E-mail: milan.vlcek@upce.cz [Joint Laboratory of Solid State Chemistry of the University of Pardubice and the Institute of Macromolecular Chemistry of Acad. Sci. of the Czech Republic, Studentska 84, 53210 Pardubice (Czech Republic)

    2009-09-15

    Thin amorphous gallium-lanthanum-sulphide films were prepared by pulsed laser deposition method. The prepared layers were characterized in terms of the structure (using Raman scattering spectroscopy), chemical composition (by energy-dispersive X-ray analysis), and optical properties (employing variable angle spectroscopic ellipsometry). Following Raman spectroscopy results, it is supposed that the structure of the bulk glass and corresponding thin films is formed by GaS{sub 4} tetrahedra and LaS{sub 8} structural units. The study of photo- and thermally induced phenomena in prepared amorphous chalcogenides shows photoinduced decrease of refractive index ({approx}1-2%) under cw (473 nm) or pulsed (248 nm) laser irradiation and annealing-induced decrease of refractive index ({approx}2%), respectively.

  13. Photo-expansion in Ge-As-S amorphous film monitored by diital holograpic microscopy and atomic force microscopy

    Czech Academy of Sciences Publication Activity Database

    Knotek, P.; Arseva, D.; Vateva, E.; Tichý, Ladislav

    2009-01-01

    Roč. 11, č. 4 (2009), s. 391-394 ISSN 1454-4164 Institutional research plan: CEZ:AV0Z40500505 Keywords : amorphous chalcogenide films Subject RIV: CA - Inorganic Chemistry Impact factor: 0.433, year: 2009

  14. On the thickness dependence of both the optical band gap and reversible photodarkening in amorphous Ge-Se films.

    Czech Academy of Sciences Publication Activity Database

    Kutálek, P.; Tichý, Ladislav

    2016-01-01

    Roč. 619, 30 November (2016), s. 336-341 ISSN 0040-6090 Institutional support: RVO:61389013 Keywords : amorphous chalcogenides * thin films * optical band gap Subject RIV: CA - Inorganic Chemistry Impact factor: 1.879, year: 2016

  15. Amorphous carbon thin films deposited on Si and PET: Study of interface states

    International Nuclear Information System (INIS)

    Mariazzi, S.; Macchi, C.; Karwasz, G.P.; Brusa, R.S.; Laidani, N.; Bartali, R.; Gottardi, G.; Anderle, M.

    2005-01-01

    Thin carbon films with various thickness, deposited on different substrates (Si and poly-ethylene-terephthalate) at the same operating conditions in a ratio frequency plasma enhanced chemical vapor deposition system were characterized by Doppler broadening spectroscopy. The films and the substrates were depth profiled by a slow positron beam. The aim od these measurements was to study the open volume structure and the interface of the films. It was found that, independently from the substrate, the films were homogeneous and exhibited to some open volume distribution. On the contrary, the effective positron diffusion length in the Si substrate was found to change with the thickness of the carbon films. This behaviour was found to change with the thickness of the carbon films. This behaviour was interpreted as a change in the electric field at the carbon/silicon interface. (author)

  16. The 1989 progress report: interface physics and thin films

    International Nuclear Information System (INIS)

    Equer, B.

    1989-01-01

    The 1989 progress report of the laboratory of Interface Physics and Thin Films of the Polytechnic School (France) is presented. The properties and the interfaces of thin films, which show optoelectronic activity, are studied. The materials investigated are hydrogenated amorphous silicon compounds, amorphous compounds of silicon-germanium, silicon-carbon and silicon-mitrogen. The techniques developed for manufacturing and characterizing those materials are included. The published papers, the conferences and the Laboratory staff are listed [fr

  17. Optimizing portal dose calculation for an amorphous silicon detector using Swiss Monte Carlo Plan

    International Nuclear Information System (INIS)

    Frauchiger, D; Fix, M K; Frei, D; Volken, W; Mini, R; Manser, P

    2007-01-01

    Purpose: Modern treatment planning systems (TPS) are able to calculate doses within the patient for numerous delivery techniques as e. g. intensity modulated radiation therapy (IMRT). Even dose predictions to an electronic portal image device (EPID) are available in some TPS, but with limitations in accuracy. With the steadily increasing number of facilities using EPIDs for pre-treatment and treatment verification, the desire of calculating accurate EPID dose distributions is growing. A solution for this problem is the use of Monte Carlo (MC) methods. Aims of this study were firstly to implement geometries of an amorphous silicon based EPID with varying levels of geometry complexity. Secondly to analyze the differences between simulation results and measurements for each geometry. Thirdly, to compare different transport algorithms within all EPID geometries in a flexible C++ MC environment. Materials and Methods: In this work three geometry sets, representing the EPID, are implemented and investigated. To gain flexibility in the MC environment geometry and particle transport code are independent. That allows the user to select between the transport algorithms EGSnrc, VMC++ and PIN (an in-house developed transport code) while using one of the implemented geometries of the EPID. For all implemented EPID geometries dose distributions were calculated for 6 MV and 15 MV beams using different transport algorithms and are then compared with measurements. Results: A very simple geometry, consisting of a water slab, is not capable to reproduce measurements, whereas 8 material layers perform well. The more layers with different materials are used, the longer last the calculations. EGSnrc and VMC++ lead to dosimetrically equal results. Gamma analysis between calculated and measured EPID dose distributions, using a dose difference criterion of ± 3% and a distance to agreement criterion of ± 3 mm, revealed a gamma value < 1 within more than 95% of all pixels, that have a

  18. Structure-Property Relationships in Polymer Derived Amorphous/Nano-Crystalline Silicon Carbide for Nuclear Applications

    International Nuclear Information System (INIS)

    Zunjarrao, Suraj C.; Singh, Abhishek K.; Singh, Raman P.

    2006-01-01

    Silicon carbide (SiC) is a promising candidate for several applications in nuclear reactors owing to its high thermal conductivity, high melting temperature, good chemical stability, and resistance to swelling under heavy ion bombardment. However, fabricating SiC by traditional powder processing route generally requires very high temperatures for pressureless sintering. Polymer derived ceramic materials offer unique advantages such as ability to fabricate net shaped components, incorporate reinforcements and relatively low processing temperatures. Furthermore, for SiC based ceramics fabricated using polymer infiltration process (PIP), the microstructure can be tailored by controlling the processing parameters, to get an amorphous, nanocrystalline or crystalline SiC. In this work, fabrication of polymer derived amorphous and nano-grained SiC is presented and its application as an in-core material is explored. Monolithic SiC samples are fabricated by controlled pyrolysis of allyl-hydrido-poly-carbo-silane (AHPCS) under inert atmosphere. Chemical changes, phase transformations and microstructural changes occurring during the pyrolysis process are studied as a function of the processing temperature. Polymer cross-linking and polymer to ceramic conversion is studied using infrared spectroscopy (FTIR). Thermogravimetric analysis (TGA) and differential thermal analysis (DTA) are performed to monitor the mass loss and phase change as a function of temperature. X-ray diffraction studies are done to study the intermediate phases and microstructural changes. Variation in density is carefully monitored as a function of processing temperature. Owing to shrinkage and gas evolution during pyrolysis, precursor derived ceramics are inherently porous and composite fabrication typically involves repeated cycles of polymer re-infiltration and pyrolysis. However, there is a limit to the densification that can be achieved by this method and porosity in the final materials presents

  19. Hardness and elastic modulus of amorphous and nanocrystalline SiC and Si films

    Czech Academy of Sciences Publication Activity Database

    Kulykovskyy, Valeriy; Vorlíček, Vladimír; Boháč, Petr; Stranyánek, Martin; Čtvrtlík, Radim; Kurdyumov, A.; Jastrabík, Lubomír

    2008-01-01

    Roč. 202, - (2008), s. 1738-1745 ISSN 0257-8972 R&D Projects: GA MŠk OC 097; GA MŠk OC 095; GA MŠk(CZ) 1M06002 Institutional research plan: CEZ:AV0Z10100522 Keywords : sputtering * hardness * nanocrystalline SiC films * nanocomposites * amorphous Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.860, year: 2008

  20. Pulsed laser deposition of magnetic films by ablation of Co- and Fe-based amorphous alloys

    Czech Academy of Sciences Publication Activity Database

    Caricato, A. P.; Frenández, M.; Frait, Zdeněk; Fraitová, Dagmar; Luby, S.; Luches, A.; Majková, E.; Majni, G.; Malych, Rastislav; Mengucci, P.

    2004-01-01

    Roč. 79, - (2004), s. 1251-1254 ISSN 0947-8396 Grant - others:VEGA(SK) 2/1106/22; VEGA(SK) 2/3149/23; MIUR(IT) Cluster P10-B; HPRN-CT(XE) 1999-00150 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic resonance * thin amorphous films * magnetization damping Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.452, year: 2004

  1. Doped nanocrystalline silicon oxide for use as (intermediate) reflecting layers in thin-film silicon solar cells

    NARCIS (Netherlands)

    Babal, P.

    2014-01-01

    In summary, this thesis shows the development and nanostructure analysis of doped silicon oxide layers. These layers are applied in thin-film silicon single and double junction solar cells. Concepts of intermediate reflectors (IR), consisting of silicon and/or zinc oxide, are applied in tandem

  2. Low-Loss, Low-Noise, Crystalline and Amorphous Silicon Dielectrics for Superconducting Microstriplines and Kinetic Inductance Detector Capacitors

    Science.gov (United States)

    Golwala, Sunil

    Prospective future PCOS (Inflation Probe) and COR (Origins Space Telescope, FIR Interferometer) missions require large arrays of highly sensitive millimeter-wave and submillimeter (mm/submm) detectors, including spectroscopic detectors. A number of technology developments in superconducting sensors for these applications require lowloss dielectric thin films. Examples include: Microstrip-coupled superconducting mm/submm detectors, which rely on superconductor-dielectric-superconductor microstrip transmission line to transmit optical power from a coherent reception element (feed horn, lens coupled antenna, phased-array antenna) to detectors; Superconducting spectrometers (SuperSpec, TIME, MicroSpec), which use such microstrip to route optical power to detectors and to define spectral channels; Kinetic inductance detectors (KIDs), which use capacitors. In the above, the dielectric loss, quantified by the loss tangent (tan delta), is critical: it determines the optical loss in the microstrip, the resolution of spectral channels, and the two-level-system (TLS) dielectric fluctuation noise of the KID capacitor. Currently, the amorphous dielectrics SiO2 and SiNx are used because they are most convenient for fabrication. They have tan delta 1e-3. This loss tangent is acceptable for microstripline but severely limits the possible architectures and spectral resolving power, and it is too large for KID capacitors. Lower loss dielectric would result in a quantum leap in capability, opening up design space heretofore inaccessible and enabling design innovations. Specific impacts on the above technologies would be: For phased-array antennas, lower optical loss would allow the detectors to be moved away from the antenna, allowing them to be shielded from absorption of light that has not been spatially or spectrally filtered and also obviating long wiring busses. More sophisticated antenna designs, such as multiscale antennas covering a decade of spectral bandwidth, could be

  3. Photostability Assessment in Amorphous-Silicon Solar Cells; Determinacion de la Fotoestabilidad en Celulas Solares de Silicio Amorfo

    Energy Technology Data Exchange (ETDEWEB)

    Gandia, J. J.; Carabe, J.; Fabero, F.; Jimenez, R.; Rivero, J. M. [Ciemat, Madrid (Spain)

    2000-07-01

    The present status of amorphous-silicon-solar-cell research and development at CIEMAT requires the possibility to characterise the devices prepared from the point of view of their stability against sunlight exposure. Therefore a set of tools providing such a capacity has been developed. Together with an introduction to photovoltaic applications of amorphous silicon and to the photodegradation problem, the present work describes the process of setting up these tools. An indoor controlled-photodegradation facility has been designed and built, and a procedure has been developed for the measurement of J-V characteristics in well established conditions. This method is suitable for a kinds of solar cells, even for those for which no model is still available. The photodegradation and characterisation of some cells has allowed to validate both the new testing facility and method. (Author) 14 refs.

  4. The formation of an amorphous interface layer precedes the onset of the nucleation of an orderly carbon structure on a silicon wafer

    Science.gov (United States)

    Belay, Kalayu; Jackson, Jeremy; Johnson, Kevin

    2002-03-01

    A thin film was grown by plasma assisted chemical vapor deposition (PACVD) process on a heated silicon wafer substrate. The reactants in the process were 298pressure and substrate temperature were 40 Torr and 9000 C respectively. The silicon wafer was scratched with diamond dust to increase the rate of nucleation. Upon absorbing energy from microwave generated plasma the methane breaks down freeing the carbon atoms, which are deposited on the substrate. The system was run for ten hours. A seemingly uniform milky thin layer of film was formed on the substrate. Initial characterization using an X-ray diffractometer was unable to detect the presence of any orderly structure of carbon atoms forming diamond or graphite. This leads us to believe that an amorphous interlayer is formed before diamond or other diamond like structure is formed on the substrate. Results of additional investigations and interpretations will be reported. *This research was supported in part by a grant from NASA MURED to Florida A&M University.

  5. Transformation from amorphous to nano-crystalline SiC thin films ...

    Indian Academy of Sciences (India)

    Silicon carbide (SiC) thin films were deposited on Si(111) by the hot wire chemical vapour deposition (HWCVD) technique using silane (SiH4) and methane (CH4) gases without hydrogen dilution. The effects of SiH4 to CH4 gas flow ratio (R) on the structural properties, chemical composition and photoluminescence (PL) ...

  6. Transformation from amorphous to nano-crystalline SiC thin films ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. Silicon carbide (SiC) thin films were deposited on Si(111) by the hot wire chemical vapour deposi- tion (HWCVD) technique using silane (SiH4) and methane (CH4) gases without hydrogen dilution. The effects of SiH4 to CH4 gas flow ratio (R) on the structural properties, chemical composition and ...

  7. Nuclear gamma-resonance study of Co-Gd amorphous films

    International Nuclear Information System (INIS)

    Ivanov, O.A.; Kumejshin, V.F.; Vas'kovskij, V.O.; Laletin, E.V.

    1982-01-01

    The gamma-resonance method has been used to study X ray Co-Gd amorphous films of 18 at.% Cd, 76% Co, 6% Fe enriched with 57 Fe up to 4% obtained by cathode high-frequency sputtering. Spectra processing has been computerized by three different programs. Effective field distributions Hsub(eff) at 57 Fe nuclei are obtained. It is shown that at annealings up to 670 K gradual crystallization occurs under conservation of ''chemical disorder''. The Hsub(eff) temperature dependence at resonance nuclei as well as angles between the magnetization vector and a normal to the film after various thermal treatments are determined [ru

  8. Effects of thickness on the statistical properties of the Barkhausen noise in amorphous films

    International Nuclear Information System (INIS)

    Santi, L.; Bohn, F.; Viegas, A.D.C.; Durin, G.; Magni, A.; Bonin, R.; Zapperi, S.; Sommer, R.L.

    2006-01-01

    The statistical properties of the Barkhausen noise (BN) in thin amorphous films are studied as a function of both the nominal composition and the thickness. BN was observed in single films with nominal compositions Fe 73.5 Cu 1 Nb 3 Si 22.5-x B x (with x=4 and 9) in the thickness range 20nm-5μm. The distributions of Barkhausen jump sizes and duration times were obtained and fitted to power laws with critical exponents τ=1.25+/-0.05 and α=1.60+/-0.05, respectively

  9. SHORT RANGE ORDER IN ANNEALED FexSi1-x AMORPHOUS FILMS

    OpenAIRE

    Alameda, J.; Fuertes, J.; Givord, D.; Liènard, A.; Martínez, B.; Moreu, M.; Tejada, J.

    1988-01-01

    Magnetic properties of as-prepared (sputtered) and annealed FexSi1-x (0.64 ≤ x ≤ 0.78) amorphous films deposited at room temperature, are interpreted in terms of chemical short-range order and compared with evaporated films deposited at 77 K. Low temperature (≤ 30 K) magnetization behaviour follows ; M (T) / M (0) = 1 - BT3/2 - CT5/2 with B = 1.5 x 10-2 K-3/2 ; C = -2.610 x-4 K-5/2. Related spin wave stiffness constant is D = 0.9 meV Å2.

  10. Amorphous Carbon Gold Nanocomposite Thin Films: Structural and Spectro-ellipsometric Analysis

    Energy Technology Data Exchange (ETDEWEB)

    Montiel-Gonzalez, Z., E-mail: zeuzmontiel@hotmail.com [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, Ciudad Universitaria, Coyoacan 04510, Mexico D.F (Mexico); Rodil, S.E.; Muhl, S. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, Ciudad Universitaria, Coyoacan 04510, Mexico D.F (Mexico); Mendoza-Galvan, A. [Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, Unidad Queretaro, 76010 Queretaro, Queretaro (Mexico); Rodriguez-Fernandez, L. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Circuito de la Investigacion Cientifica, Ciudad Universitaria, 04510, Mexico D.F (Mexico)

    2011-07-01

    Spectroscopic Ellipsometry was used to determine the optical and structural properties of amorphous carbon:gold nanocomposite thin films deposited by dc magnetron co-sputtering at different deposition power. The incorporation of gold as small particles distributed in the amorphous carbon matrix was confirmed by X-ray Diffraction, Rutherford Backscattering measurements and High Resolution Transmission Electron Microscopy. Based on these results, an optical model for the films was developed using the Maxwell-Garnett effective medium with the Drude-Lorentz model representing the optical response of gold and the Tauc-Lorentz model for the amorphous carbon. The gold volume fraction and particle size obtained from the fitting processes were comparable to those from the physical characterization. The analysis of the ellipsometric spectra for all the samples showed strong changes in the optical properties of the carbon films as a consequence of the gold incorporation. These changes were correlated to the structural modification observed by Raman Spectroscopy, which indicated a clustering of the sp{sup 2} phase with a subsequent decrease in the optical gap. Finally, measurements of Reflection and Transmission Spectroscopy were carried out and Transmission Electron Microscopy images were obtained in order to support the ellipsometric model results.

  11. Amorphous NEA Silicon Photocathodes - A Robust RF Gun Electron Source. Final Report

    International Nuclear Information System (INIS)

    Mulhollan, Gregory A.

    2009-01-01

    Amorphous silicon (a-Si) has been shown to have great promise as a negative electron affinity visible wavelength photocathode suitable for radio frequency (RF) gun systems. The specific operating wavelength can be shifted by growing it as a germanium alloy (a-Si(1-x)Ge(x)) rather than as pure silicon. This class of photoemitters has been shown to possess a high degree of immunity to charged particle flux. Such particle flux can be a significant problem in the operation of other photocathodes in RF gun systems. Its emission characteristics in the form of current per unit area, or current density, and emission angle, or beam spread are well matched for use in RF guns. Photocathodes made of a-Si can be fabricated on a variety of substrates including those most commonly employed in RF gun systems. Such photocathodes can be made for operation in either transmission or reflection mode. By growing them utilizing radio frequency plasma enhanced chemical vapor deposition, the unit cost is quite low, the quality is high and it is straightforward to grow custom size substrates and full or limited regions to confine the electron emission to the desired area. Quality emitters have been fabricated on tantalum, molybdenum, tungsten, titanium, copper, stainless steel, float glass, borosilicate glass and gallium arsenide. In addition to performing well in dedicated test chambers, a-Si photocathodes have been shown to function well in self-contained vacuum tubes. In this employment, they are subjected to a strenuous environment. Successful operation in this configuration provides additional confidence in their application to high energy linac photoinjectors and potentially as part of reliable, low cost photocathode driven RF gun systems that could become ready replacements for the diode and triode guns used on medical accelerators. Their applications in stand-alone vacuum tubes is just beginning to be explored.

  12. Improvement of memory window and retention with low trap density in hydrogenated-amorphous-silicon-germanium nonvolatile memory

    International Nuclear Information System (INIS)

    Choi, Woojin; Jang, Kyungsoo; Raja, Jayapal; Cho, Jaehyun; Nguyen, Hong Hanh; Kim, Jiwoong; Lee, YounJung; Nagarajan, Balaji; Yi, Junsin; Kim, Minbum

    2013-01-01

    We report the SiO 2 /SiO X /SiO X N Y (OO X O N ) stacked nonvolatile memory (NVM) using hydrogenated amorphous silicon germanium (a-Si X Ge 1–X :H) as an active channel layer. In NVMs, the reduction of interface trap density is one of the key issues to improve device performance including memory window and retention. The NVMs using a-SiGe:H as the active channel overcame the limitation of small memory window size and poor retention characteristics by controlling the interface trap density using different Ge contents in the surface SiGe layer. For a-Si:H NVM that does not contain Ge, the memory size is about 5.15 V, which is quite large, with a programming voltage of −7 V and an erasing voltage of +15 V. However, the retention time of over 10 years is almost impossible. For a-SiGe:H NVM with 20% Ge, the memory size is as large as 7.38 V and the retention data of ∼58% is possible even after 10 years due to the reduced trap density in OO X O N and channel layers. When the Ge content is more than 20%, the memory size and retention property after 10 years decrease rapidly. When the contents of Ge in SiGe films reach a certain point, they act as defects lowering the properties. The results of NVM devices using a-SiGe:H (Ge 20%) as an active channel layer demonstrate that they have switching characteristics suitable for data storage such as a threshold voltage window. (paper)

  13. Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers

    Science.gov (United States)

    Moustakas, Theodore D.; Maruska, H. Paul

    1985-07-09

    A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

  14. Structural, morphological, compositional and optical studies of plasma polymerized 2-furaldehyde amorphous thin films

    Science.gov (United States)

    Kabir, Humayun; Rahman, M. Mahbubur; Uddin, Kabir M.; Bhuiyan, A. H.

    2017-11-01

    Plasma synthesized 2-furaldehyde (PPFDH) amorphous polymer thin films of varying thicknesses were prepared in optimum conditions by a capacitively coupled parallel plate glow discharge reactor at room temperature. The structure, morphology, composition and optical properties of deposited PPFDH thin films have been investigated using X-Ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, Scanning electron microscopy (SEM), Energy dispersive X-Ray spectroscopy (EDS), as well as Ultraviolet-visible (UV-vis) absorption spectroscopy. XRD results confirmed the amorphous nature of the films. The smooth and uniform nature of the PPFDH thin films were observed by SEM images. FTIR analyses of monomer FDH and PPFDH thin films show that structural rearrangement has occurred due to the synthesis process taking place in the chemical structure. IR stretching bands obtained from DFT calculations of the optimized structures of monomer and polymer of 2-furaldehyde are in good agreement with the experimental results. UV-vis absorption spectra in transmittance as well as reflectance mode was utilized to compute absorption coefficient, allowed direct and indirect transition energy gaps, band edge sharpness, Urbach energy, steepness parameter, extinction coefficient, and dispersion and oscillator energy. The oscillator strength, moments of optical spectra, refractive index at infinite wavelength, high frequency dielectric constant, average oscilator strength, complex refractive index, dissipation factor, optical conductivity and skin depth were also determined by using measured UV-vis transmittance and reflectance spectra.

  15. Modeling and simulation of boron-doped nanocrystalline silicon carbide thin film by a field theory.

    Science.gov (United States)

    Xiong, Liming; Chen, Youping; Lee, James D

    2009-02-01

    This paper presents the application of a multiscale field theory in modeling and simulation of boron-doped nanocrystalline silicon carbide (B-SiC). The multiscale field theory was briefly introduced. Based on the field theory, numerical simulations show that intergranular glassy amorphous films (IGFs) and nano-sized pores exist in triple junctions of the grains for nanocrystalline B-SiC. Residual tensile stress in the SiC grains and compressive stress on the grain boundaries (GBs) were observed. Under tensile loading, it has been found that mechanical response of 5 wt% boron-SiC exhibits five characteristic regimes. Deformation mechanism at atomic scale has been revealed. Tensile strength and Young's modulus of nanocrystalline SiC were accurately reproduced.

  16. Tuning the optoelectronic properties of amorphous MoOx films by reactive sputtering

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; Fabrim, Zacarias Eduardo; Ahmadpour, Mehrad

    2015-01-01

    In this letter, we report on the effect of oxygen partial pressure and sputtering power on amorphous DC-sputtered MoOx films. We observe abrupt changes in the optoelectronic properties of the reported films by increasing the oxygen partial pressure from 1.00 ? 10?3 mbar to 1.37 ? 10?3 mbar during...... significantly the microstructure of the studied films. The presence of states within the band gap due to the lack of oxygen is the most probable mechanism for generat- ing a change in electrical conductivity as well as optical absorption in DC-sputtered MoOx. The large tuning range of the optoelectronic...... properties in these films holds strong promise for their implementation in optoelectronic devices....

  17. A Low-Stress, Elastic, and Improved Hardness Hydrogenated Amorphous Carbon Film

    Directory of Open Access Journals (Sweden)

    Qi Wang

    2015-01-01

    Full Text Available The evolution of hydrogenated amorphous carbon films with fullerene-like microstructure was investigated with a different proportion of hydrogen supply in deposition. The results showed at hydrogen flow rate of 50 sccm, the deposited films showed a lower compressive stress (lower 48.6%, higher elastic recovery (higher 19.6%, near elastic recovery rate 90%, and higher hardness (higher 7.4% compared with the films deposited without hydrogen introduction. Structural analysis showed that the films with relatively high sp2 content and low bonded hydrogen content possessed high hardness, elastic recovery rate, and low compressive stress. It was attributed to the curved graphite microstructure, which can form three-dimensional covalently bonded network.

  18. Properties of amorphous WN sub x thin films prepared by RF magnetron sputtering

    CERN Document Server

    Han, K Y

    1999-01-01

    Amorphous WN sub x thin films were prepared as X-ray absorbers by using RF magnetron sputtering. The possibilities of anisotropic etching for the films are studied as functions of the CHF sub 3 concentration and other etching parameters by using ion etching equipment. Anisotropic etching profiles are achieved for the films prepared at a CHF sub 3 /SF sub 6 ratio of approx =0.5/0.5 in Ar, a working pressure of approx =200 mTorr, an RF power density of 0.39 W/cm sup 2 and room temperature. From an analysis of X-ray Photoelectron Spectroscopy (XPS), it is concluded that the anisotropic etching profiles are caused by an inhibitor composed of carbon compounds on the side walls of WN sub x films.

  19. Characterization of an Amorphous Titanium Oxide Film Deposited onto a Nano-Textured Fluorination Surface

    Directory of Open Access Journals (Sweden)

    Pei-Yu Li

    2016-05-01

    Full Text Available The photocatalytic activity of an amorphous titanium oxide (a-TiOx film was modified using a two-step deposition. The fluorinated base layer with a nano-textured surface prepared by a selective fluorination etching process acted as growth seeds in the subsequent a-TiOx deposition. A nanorod-like microstructure was achievable from the resulting a-TiOx film due to the self-assembled deposition. Compared to the a-TiOx film directly deposited onto the untreated base layer, the rate constant of this fluorinate-free a-TiOx film surface for decomposing methylene blue (MB solution that was employed to assess the film’s photocatalytic activity was markedly increased from 0.0076 min−1 to 0.0267 min−1 as a mechanism for the marked increase in the specific surface area.

  20. Toward an Understanding of Thin-Film Transistor Performance in Solution-Processed Amorphous Zinc Tin Oxide (ZTO) Thin Films.

    Science.gov (United States)

    Sanctis, Shawn; Koslowski, Nico; Hoffmann, Rudolf; Guhl, Conrad; Erdem, Emre; Weber, Stefan; Schneider, Jörg J

    2017-06-28

    Amorphous zinc tin oxide (ZTO) thin films are accessible by a molecular precursor approach using mononuclear zinc(II) and tin(II) compounds with methoxyiminopropionic acid ligands. Solution processing of two precursor solutions containing a mixture of zinc and tin(II)-methoxyiminopropinato complexes results in the formation of smooth homogeneous thin films, which upon calcination are converted into the desired semiconducting amorphous ZTO thin films. ZTO films integrated within a field-effect transistor (FET) device exhibit an active semiconducting behavior in the temperature range between 250 and 400 °C, giving an increased performance, with mobility values between μ = 0.03 and 5.5 cm 2 /V s, with on/off ratios increasing from 10 5 to 10 8 when going from 250 to 400 °C. Herein, our main emphasis, however, was on an improved understanding of the material transformation pathway from weak to high performance of the semiconductor in a solution-processed FET as a function of the processing temperature. We have correlated this with the chemical composition and defects states within the microstructure of the obtained ZTO thin film via photoelectron spectroscopy (X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy), Auger electron spectroscopy, electron paramagnetic resonance spectroscopy, atomic force microscopy, and photoluminescence investigations. The critical factor observed for the improved performance within this ZTO material could be attributed to a higher tin concentration, wherein the contributions of point defects arising from the tin oxide within the final amorphous ZTO material play the dominant role in governing the transistor performance.