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Sample records for amorphous silicon carbide

  1. Neutron irradiation induced amorphization of silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Snead, L.L.; Hay, J.C. [Oak Ridge National Lab., TN (United States)

    1998-09-01

    This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 {times} 10{sup 25} n/m{sup 2}. Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density ({minus}10.8%), elastic modulus as measured using a nanoindentation technique ({minus}45%), hardness as measured by nanoindentation ({minus}45%), and standard Vickers hardness ({minus}24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C.

  2. Tunable plasticity in amorphous silicon carbide films.

    Science.gov (United States)

    Matsuda, Yusuke; Kim, Namjun; King, Sean W; Bielefeld, Jeff; Stebbins, Jonathan F; Dauskardt, Reinhold H

    2013-08-28

    Plasticity plays a crucial role in the mechanical behavior of engineering materials. For instance, energy dissipation during plastic deformation is vital to the sufficient fracture resistance of engineering materials. Thus, the lack of plasticity in brittle hybrid organic-inorganic glasses (hybrid glasses) often results in a low fracture resistance and has been a significant challenge for their integration and applications. Here, we demonstrate that hydrogenated amorphous silicon carbide films, a class of hybrid glasses, can exhibit a plasticity that is even tunable by controlling their molecular structure and thereby leads to an increased and adjustable fracture resistance in the films. We decouple the plasticity contribution from the fracture resistance of the films by estimating the "work-of-fracture" using a mean-field approach, which provides some insight into a potential connection between the onset of plasticity in the films and the well-known rigidity percolation threshold.

  3. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Boccard, Mathieu; Holman, Zachary C. [School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287-5706 (United States)

    2015-08-14

    Amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300 °C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.

  4. Threshold irradiation dose for amorphization of silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Snead, L.L.; Zinkle, S.J. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    The amorphization of silicon carbide due to ion and electron irradiation is reviewed with emphasis on the temperature-dependent critical dose for amorphization. The effect of ion mass and energy on the threshold dose for amorphization is summarized, showing only a weak dependence near room temperature. Results are presented for 0.56 MeV silicon ions implanted into single crystal 6H-SiC as a function of temperature and ion dose. From this, the critical dose for amorphization is found as a function of temperature at depths well separated from the implanted ion region. Results are compared with published data generated using electrons and xenon ions as the irradiating species. High resolution TEM analysis is presented for the Si ion series showing the evolution of elongated amorphous islands oriented such that their major axis is parallel to the free surface. This suggests that surface of strain effects may be influencing the apparent amorphization threshold. Finally, a model for the temperature threshold for amorphization is described using the Si ion irradiation flux and the fitted interstitial migration energy which was found to be {approximately}0.56 eV. This model successfully explains the difference in the temperature-dependent amorphization behavior of SiC irradiated with 0.56 MeV silicon ions at 1 x 10{sup {minus}3} dpa/s and with fission neutrons irradiated at 1 x 10{sup {minus}6} dpa/s irradiated to 15 dpa in the temperature range of {approximately}340 {+-} 10K.

  5. Grain boundary resistance to amorphization of nanocrystalline silicon carbide

    Science.gov (United States)

    Chen, Dong; Gao, Fei; Liu, Bo

    2015-11-01

    Under the C displacement condition, we have used molecular dynamics simulation to examine the effects of grain boundaries (GBs) on the amorphization of nanocrystalline silicon carbide (nc-SiC) by point defect accumulation. The results show that the interstitials are preferentially absorbed and accumulated at GBs that provide the sinks for defect annihilation at low doses, but also driving force to initiate amorphization in the nc-SiC at higher doses. The majority of surviving defects are C interstitials, as either C-Si or C-C dumbbells. The concentration of defect clusters increases with increasing dose, and their distributions are mainly observed along the GBs. Especially these small clusters can subsequently coalesce and form amorphous domains at the GBs during the accumulation of carbon defects. A comparison between displacement amorphized nc-SiC and melt-quenched single crystal SiC shows the similar topological features. At a dose of 0.55 displacements per atom (dpa), the pair correlation function lacks long range order, demonstrating that the nc-SiC is fully amorphilized.

  6. FTIR study of silicon carbide amorphization by heavy ion irradiations

    Science.gov (United States)

    Costantini, Jean-Marc; Miro, Sandrine; Pluchery, Olivier

    2017-03-01

    We have measured at room temperature (RT) the Fourier-transform infra-red (FTIR) absorption spectra of ion-irradiated thin epitaxial films of cubic silicon carbide (3C–SiC) with 1.1 µm thickness on a 500 µm thick (1 0 0) silicon wafer substrate. Irradiations were carried out at RT with 2.3 MeV 28Si+ ions and 3.0 MeV 84Kr+ ions for various fluences in order to induce amorphization of the SiC film. Ion projected ranges were adjusted to be slightly larger than the film thickness so that the whole SiC layers were homogeneously damaged. FTIR spectra of virgin and irradiated samples were recorded for various incidence angles from normal incidence to Brewster’s angle. We show that the amorphization process in ion-irradiated 3C–SiC films can be monitored non-destructively by FTIR absorption spectroscopy without any major interference of the substrate. The compared evolutions of TO and LO peaks upon ion irradiation yield valuable information on the damage process. Complementary test experiments were also performed on virgin silicon nitride (Si3N4) self-standing films for similar conditions. Asymmetrical shapes were found for TO peaks of SiC, whereas Gaussian profiles are found for LO peaks. Skewed Gaussian profiles, with a standard deviation depending on wave number, were used to fit asymmetrical peaks for both materials. A new methodology for following the amorphization process is proposed on the basis of the evolution of fitted IR absorption peak parameters with ion fluence. Results are discussed with respect to Rutherford backscattering spectrometry channeling and Raman spectroscopy analysis.

  7. Silicon nanocrystals on amorphous silicon carbide alloy thin films: Control of film properties and nanocrystals growth

    Energy Technology Data Exchange (ETDEWEB)

    Barbe, Jeremy, E-mail: jeremy.barbe@hotmail.com [CEA, Liten, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Universite de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, 31062 Toulouse (France); Xie, Ling; Leifer, Klaus [Department of Engineering Sciences, Uppsala University, Box 534, S-751 21 Uppsala (Sweden); Faucherand, Pascal; Morin, Christine; Rapisarda, Dario; De Vito, Eric [CEA, Liten, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Makasheva, Kremena; Despax, Bernard [Universite de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, 31062 Toulouse (France); CNRS, LAPLACE, F-31062 Toulouse (France); Perraud, Simon [CEA, Liten, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2012-11-01

    The present study demonstrates the growth of silicon nanocrystals on amorphous silicon carbide alloy thin films. Amorphous silicon carbide films [a-Si{sub 1-x}C{sub x}:H (with x < 0.3)] were obtained by plasma enhanced chemical vapor deposition from a mixture of silane and methane diluted in hydrogen. The effect of varying the precursor gas-flow ratio on the film properties was investigated. In particular, a wide optical band gap (2.3 eV) was reached by using a high methane-to-silane flow ratio during the deposition of the a-Si{sub 1-x}C{sub x}:H layer. The effect of short-time annealing at 700 Degree-Sign C on the composition and properties of the layer was studied by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. It was observed that the silicon-to-carbon ratio in the layer remains unchanged after short-time annealing, but the reorganization of the film due to a large dehydrogenation leads to a higher density of SiC bonds. Moreover, the film remains amorphous after the performed short-time annealing. In a second part, it was shown that a high density (1 Multiplication-Sign 10{sup 12} cm{sup -2}) of silicon nanocrystals can be grown by low pressure chemical vapor deposition on a-Si{sub 0.8}C{sub 0.2} surfaces at 700 Degree-Sign C, from silane diluted in hydrogen. The influence of growth time and silane partial pressure on nanocrystals size and density was studied. It was also found that amorphous silicon carbide surfaces enhance silicon nanocrystal nucleation with respect to SiO{sub 2}, due to the differences in surface chemical properties. - Highlights: Black-Right-Pointing-Pointer Silicon nanocrystals (Si-NC) growth on amorphous silicon carbide alloy thin films Black-Right-Pointing-Pointer Plasma deposited amorphous silicon carbide films with well-controlled properties Black-Right-Pointing-Pointer Study on the thermal effect of 700 Degree-Sign C short-time annealing on the layer properties Black-Right-Pointing-Pointer Low pressure

  8. Electronic properties of intrinsic and doped amorphous silicon carbide films

    Energy Technology Data Exchange (ETDEWEB)

    Vetter, M. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain)]. E-mail: mvetter@eel.upc.edu; Voz, C. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Ferre, R. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Martin, I. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Orpella, A. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Puigdollers, J. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Andreu, J. [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E-08028 Barcelona (Spain); Alcubilla, R. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain)

    2006-07-26

    Hydrogenated amorphous silicon carbide (a-SiC{sub x} : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was investigated. It is found that homogenous deposition with effective surface recombination velocity lower than 100 cms{sup -1} is possible up to 6'' diameter in a simple parallel plate reactor by optimizing deposition parameters. For application in solar cell processes the conductivity of these a-SiC{sub x} : H films might become of importance since good surface passivation results from field-effect passivation which needs an insulating dielectric layer. Therefore, the temperature dependence of the dark dc conductivity of these films was investigated in the temperature range from - 20 to 260 deg. C. Two transition temperatures, T {sub s}{approx}80 deg. C and T {sub s}{approx}170 deg. C, were found where conductivity increases, resp. decreases over-exponential. From Arrhenius plots activation energy (E {sub a}) and conductivity pre-factor ({sigma} {sub 0}) were calculated for a large number of samples with different composition. A correlation between E {sub a} and {sigma} {sub 0} was found giving a Meyer-Neldel relation with a slope of 59 mV, corresponding to a material characteristic temperature T {sub m} = 400 deg. C, and an intercept at {sigma} {sub 00} = 0.1 {omega}{sup -1}cm{sup -1}.

  9. Multi-band silicon quantum dots embedded in an amorphous matrix of silicon carbide

    Science.gov (United States)

    Chang, Geng-rong; Ma, Fei; Ma, Da-yan; Xu, Ke-wei

    2010-11-01

    Silicon quantum dots embedded in an amorphous matrix of silicon carbide were realized by a magnetron co-sputtering process and post-annealing. X-ray photoelectron spectroscopy, glancing x-ray diffraction, Raman spectroscopy and high-resolution transmission electron microscopy were used to characterize the chemical composition and the microstructural properties. The results show that the sizes and size distribution of silicon quantum dots can be tuned by changing the annealing atmosphere and the atom ratio of silicon and carbon in the matrix. A physicochemical mechanism is proposed to demonstrate this formation process. Photoluminescence measurements indicate a multi-band configuration due to the quantum confinement effect of silicon quantum dots with different sizes. The PL spectra are further widened as a result of the existence of amorphous silicon quantum dots. This multi-band configuration would be extremely advantageous in improving the photoelectric conversion efficiency of photovoltaic solar cells.

  10. 2H-SiC Dendritic Nanocrystals In Situ Formation from Amorphous Silicon Carbide under Electron Beam Irradiation

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Under electron beam irradiation, the in-situ formation of 2H-SiC dentritic nanocrystals from amorphous silicon carbide at room temperature was observed. The homogenous transition mainly occurs at the thin edge and on the surface of specimen where the energy obtained from electron beam irradiation is high enough to cause the amorphous crystallizing into 2H-SiC.

  11. Amorphous Silicon Carbide Passivating Layers to Enable Higher Processing Temperature in Crystalline Silicon Heterojunction Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Boccard, Mathieu [Arizona State Univ., Mesa, AZ (United States); Holman, Zachary [Arizona State Univ., Mesa, AZ (United States)

    2015-04-06

    "Very efficient crystalline silicon (c-Si) solar cells have been demonstrated when thin layers of intrinsic and doped hydrogenated amorphous silicon (a-Si:H) are used for passivation and carrier selectivity in a heterojunction device. One limitation of this device structure is the (parasitic) absorption in the front passivation/collection a-Si:H layers; another is the degradation of the a-Si:H-based passivation upon temperature, limiting the post-processes to approximately 200°C thus restricting the contacting possibilities and potential tandem device fabrication. To alleviate these two limitations, we explore the potential of amorphous silicon carbide (a-SiC:H), a widely studied material in use in standard a-Si:H thin-film solar cells, which is known for its wider bandgap, increased hydrogen content and stronger hydrogen bonding compared to a-Si:H. We study the surface passivation of solar-grade textured n-type c-Si wafers for symmetrical stacks of 10-nm-thick intrinsic a-SiC:H with various carbon content followed by either p-doped or n-doped a-Si:H (referred to as i/p or i/n stacks). For both doping types, passivation (assessed through carrier lifetime measurements) is degraded by increasing the carbon content in the intrinsic a-SiC:H layer. Yet, this hierarchy is reversed after annealing at 350°C or more due to drastic passivation improvements upon annealing when an a-SiC:H layer is used. After annealing at 350°C, lifetimes of 0.4 ms and 2.0 ms are reported for i/p and i/n stacks, respectively, when using an intrinsic a-SiC:H layer with approximately 10% of carbon (initial lifetimes of 0.3 ms and 0.1 ms, respectively, corresponding to a 30% and 20-fold increase, respectively). For stacks of pure a-Si:H material the lifetimes degrade from 1.2 ms and 2.0 ms for i/p and i/n stacks, respectively, to less than 0.1 ms and 1.1 ms (12-fold and 2-fold decrease, respectively). For complete solar cells using pure a-Si:H i/p and i/n stacks, the open-circuit voltage (Voc

  12. Direct visualization of photoinduced glassy dynamics on the amorphous silicon carbide surface by STM movies

    Science.gov (United States)

    Nguyen, Duc; Nienhaus, Lea; Haasch, Richard T.; Lyding, Joseph; Gruebele, Martin

    2015-03-01

    Glassy dynamics can be controlled by light irradiation. Sub- and above-bandgap irradiation cause numerous phenomena in glasses including photorelaxation, photoexpansion, photodarkening and pohtoinduced fluidity. We used scanning tunneling microscopy to study surface glassy dynamics of amorphous silicon carbide irradiated with above- bandgap 532 nm light. Surface clusters of ~ 4-5 glass forming unit in diameter hop mostly in a two-state fashion, both without and with irradiation. Upon irradiation, the average surface hopping activity increases by a factor of 3. A very long (~1 day) movie of individual clusters with varying laser power density provides direct evidence for photoinduced enhanced hopping on the glass surfaces. We propose two mechanisms: heating and electronic for the photoenhanced surface dynamics.

  13. Growth and Physical Structure of Amorphous Boron Carbide Deposited by Magnetron Sputtering on a Silicon Substrate with a Titanium Interlayer

    Directory of Open Access Journals (Sweden)

    Roberto Caniello

    2013-01-01

    Full Text Available Multilayer amorphous boron carbide coatings were produced by radiofrequency magnetron sputtering on silicon substrates. To improve the adhesion, titanium interlayers with different thickness were interposed between the substrate and the coating. Above three hundreds nanometer, the enhanced roughness of the titanium led to the growth of an amorphous boron carbide with a dense and continuing columnar structure, and no delamination effect was observed. Correspondingly, the adhesion of the coating became three time stronger than in the case of a bare silicon substrate. Physical structure and microstructural proprieties of the coatings were investigated by means of a scan electron microscopy, atomic force microscopy and X-ray diffraction. The adhesion of the films was measured by a scratch tester.

  14. Surface plasmon enhanced photoluminescence in amorphous silicon carbide films by adjusting Ag island film sizes

    Institute of Scientific and Technical Information of China (English)

    Yu Wei; Wang Xin-Zhan; Dai Wan-Lei; Lu Wan-Bing; Liu Yu-Mei; Fu Guang-Sheng

    2013-01-01

    Ag island films with different sizes are deposited on hydrogenated amorphous silicon carbide (α-SiC∶H) films,and the influences of Ag island films on the optical properties of the α-SiC∶H films are investigated.Atomic force microscope images show that Ag nanoislands are formed after Ag coating,and the size of the Ag islands increases with increasing Ag deposition time.The extinction spectra indicate that two resonance absorption peaks which correspond to out-of-plane and in-plane surface plasmon modes of the Ag island films are obtained,and the resonance peak shifts toward longer wavelength with increasing Ag island size.The photoluminescence (PL) enhancement or quenching depends on the size of Ag islands,and PL enhancement by 1.6 times on the main PL band is obtained when the sputtering time is 10 min.Analyses show that the influence of surface plasmons on the PL of α-SiC:H is determined by the competition between the scattering and absorption of Ag islands,and PL enhancement is obtained when scattering is the main interaction between the Ag islands and incident light.

  15. In vivo Characterization of Amorphous Silicon Carbide As a Biomaterial for Chronic Neural Interfaces.

    Science.gov (United States)

    Knaack, Gretchen L; McHail, Daniel G; Borda, German; Koo, Beomseo; Peixoto, Nathalia; Cogan, Stuart F; Dumas, Theodore C; Pancrazio, Joseph J

    2016-01-01

    Implantable microelectrode arrays (MEAs) offer clinical promise for prosthetic devices by enabling restoration of communication and control of artificial limbs. While proof-of-concept recordings from MEAs have been promising, work in animal models demonstrates that the obtained signals degrade over time. Both material robustness and tissue response are acknowledged to have a role in device lifetime. Amorphous Silicon carbide (a-SiC), a robust material that is corrosion resistant, has emerged as an alternative encapsulation layer for implantable devices. We systematically examined the impact of a-SiC coating on Si probes by immunohistochemical characterization of key markers implicated in tissue-device response. After implantation, we performed device capture immunohistochemical labeling of neurons, astrocytes, and activated microglia/macrophages after 4 and 8 weeks of implantation. Neuron loss and microglia activation were similar between Si and a-SiC coated probes, while tissue implanted with a-SiC displayed a reduction in astrocytes adjacent to the probe. These results suggest that a-SiC has a similar biocompatibility profile as Si, and may be suitable for implantable MEA applications as a hermetic coating to prevent material degradation.

  16. SILICON CARBIDE FOR SEMICONDUCTORS

    Science.gov (United States)

    This state-of-the-art survey on silicon carbide for semiconductors includes a bibliography of the most important references published as of the end...of 1964. The various methods used for growing silicon carbide single crystals are reviewed, as well as their properties and devices fabricated from...them. The fact that the state of-the-art of silicon carbide semiconductors is not further advanced may be attributed to the difficulties of growing

  17. Silicon Carbide Shapes.

    Science.gov (United States)

    Free-standing silicon carbide shapes are produced by passing a properly diluted stream of a reactant gas, for example methyltrichlorosilane, into a...reaction chamber housing a thin walled, hollow graphite body heated to 1300-1500C. After the graphite body is sufficiently coated with silicon carbide , the...graphite body is fired, converting the graphite to gaseous CO2 and CO and leaving a silicon carbide shaped article remaining.

  18. Fabrication of hydrogenated amorphous silicon carbide films by decomposition of hexamethyldisilane with microwave discharge flow of Ar

    Science.gov (United States)

    Ito, Haruhiko; Kumakura, Motoki; Suzuki, Tsuneo; Niibe, Masahito; Kanda, Kazuhiro; Saitoh, Hidetoshi

    2016-06-01

    Hydrogenated amorphous silicon carbide films have been fabricated by the decomposition of hexamethyldisilane with a microwave discharge flow of Ar. Mechanically hard films were obtained by applying radio-frequency (RF) bias voltages to the substrate. The atomic compositions of the films were analyzed by a combination of Rutherford backscattering and elastic recoil detection, X-ray photoelectron spectroscopy (XPS), and glow discharge optical emission spectroscopy. The chemical structure was analyzed by carbon-K near-edge X-ray absorption fine structure spectroscopy, high-resolution XPS, and Fourier transform infrared absorption spectroscopy. The structural changes upon the application of RF bias were investigated, and the concentration of O atoms near the film surface was found to play a key role in the mechanical hardness of the present films.

  19. PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC CARBON SOURCE

    Institute of Scientific and Technical Information of China (English)

    Xu Jun; Ma Tian-fu; Li Wei; Chen Kun-ji; Li Zhi-feng; Lu Wei

    2000-01-01

    Hydrogenated amorphous silicon carbide (a-SiC:H) films were grown byusing an organic source, xylene (C8H{10), instead of methane(CH4) in a conventional plasma enhanced chemical vapor depositionsystem. The optical band gap of these samples was increased gradually bychanging the gas ratio of C8H10 to SiH4. The film with highoptical band gap was soft and polymer-like and intense photoluminescencewere obtained. Room temperature electro-luminescence was also achievedwith peak energy at 2.05 eV (600 nm) for the a-SiC:H film withoptical band gap of 3.2 eV.1.8mm

  20. SILICON CARBIDE DATA SHEETS

    Science.gov (United States)

    These data sheets present a compilation of a wide range of electrical, optical and energy values for alpha and beta- silicon carbide in bulk and film...spectrum. Energy data include energy bands, energy gap and energy levels for variously-doped silicon carbide , as well as effective mass tables, work

  1. Nanocrystalline silicon and silicon quantum dots formation within amorphous silicon carbide by plasma enhanced chemical vapour deposition method controlling the Argon dilution of the process gases

    Energy Technology Data Exchange (ETDEWEB)

    Kole, Arindam; Chaudhuri, Partha, E-mail: erpc@iacs.res.in

    2012-11-01

    Structural and optical properties of the amorphous silicon carbide (a-SiC:H) thin films deposited by radio frequency plasma enhanced chemical vapour deposition method from a mixture of silane (SiH{sub 4}) and methane (CH{sub 4}) diluted in argon (Ar) have been studied with variation of Ar dilution from 94% to 98.4%. It is observed that nanocrystalline silicon starts to form within the a-SiC:H matrix by increasing the dilution to 96%. With further increase in Ar dilution to 98% formation of the silicon nanocrystals (nc-Si) with variable size is enhanced. The optical band gap (E{sub g}) of the a-SiC:H film decreases from 2.0 eV to 1.9 eV with increase in Ar dilution from 96% to 98% as the a-SiC:H films gradually become Si rich. On increasing the Ar dilution further to 98.4% leads to the appearance of crystalline silicon quantum dots (c-Si q-dots) of nearly uniform size of 3.5 nm. The quantum confinement effect is apparent from the sharp increase in the E{sub g} value to 2.6 eV. The phase transformation phenomenon from nc-Si within the a-SiC:H films to Si q-dot were further studied by high resolution transmission electron microscopy and the grazing angle X-ray diffraction spectra. A relaxation in the lattice strain has been observed with the formation of Si q-dots.

  2. Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Boukezzata, A., E-mail: assiab2006@yahoo.fr [Silicon Technology Development Unit (UDTS), 02 Bd. Frantz FANON, B.P. 140 Algiers (Algeria); Keffous, A., E-mail: keffousa@yahoo.fr [Silicon Technology Development Unit (UDTS), 02 Bd. Frantz FANON, B.P. 140 Algiers (Algeria); Cheriet, A.; Belkacem, Y.; Gabouze, N.; Manseri, A. [Silicon Technology Development Unit (UDTS), 02 Bd. Frantz FANON, B.P. 140 Algiers (Algeria); Nezzal, G. [Houari Boumediene University (USTHB), Chemical Faculty, Algiers (Algeria); Kechouane, M.; Bright, A. [Houari Boumediene University, Physical Faculty, Algiers (Algeria); Guerbous, L. [Algerian Nuclear Research Center (CRNA), Algiers (Algeria); Menari, H. [Silicon Technology Development Unit (UDTS), 02 Bd. Frantz FANON, B.P. 140 Algiers (Algeria)

    2010-07-01

    In this work, we present the formation of porous layers on hydrogenated amorphous SiC (a-SiC: H) by Ag-assisted photochemical etching using HF/K{sub 2}S{sub 2}O{sub 8} solution under UV illumination at 254 nm wavelength. The amorphous films a-SiC: H were elaborated by d.c. magnetron sputtering using a hot pressed polycrystalline 6H-SiC target. Because of the high resistivity of the SiC layer, around 1.6 M{Omega} cm and in order to facilitate the chemical etching, a thin metallic film of high purity silver (Ag) has been deposited under vacuum onto the thin a-SiC: H layer. The etched surface was characterized by scanning electron microscopy, secondary ion mass spectroscopy, infrared spectroscopy and photoluminescence. The results show that the morphology of etched a-SiC: H surface evolves with etching time. For an etching time of 20 min the surface presents a hemispherical crater, indicating that the porous SiC layer is perforated. Photoluminescence characterization of etched a-SiC: H samples for 20 min shows a high and an intense blue PL, whereas it has been shown that the PL decreases for higher etching time. Finally, a dissolution mechanism of the silicon carbide in 1HF/1K{sub 2}S{sub 2}O{sub 8} solution has been proposed.

  3. Chemical Analysis Methods for Silicon Carbide

    Institute of Scientific and Technical Information of China (English)

    Shen Keyin

    2006-01-01

    @@ 1 General and Scope This Standard specifies the determination method of silicon dioxide, free silicon, free carbon, total carbon, silicon carbide, ferric sesquioxide in silicon carbide abrasive material.

  4. Stabilization of boron carbide via silicon doping.

    Science.gov (United States)

    Proctor, J E; Bhakhri, V; Hao, R; Prior, T J; Scheler, T; Gregoryanz, E; Chhowalla, M; Giulani, F

    2015-01-14

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

  5. Amorphization and recrystallization processes in monocrystalline beta silicon carbide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Edmond, J.A.; Withrow, S.P.; Kong, H.S.; Davis, R.F.

    1985-01-01

    Individual, as well as multiple doses of /sup 27/Al/sup +/, /sup 31/P/sup +/, /sup 28/Si/sup +/, and /sup 28/Si/sup +/ and /sup 12/C/sup +/, were implanted into (100) oriented monocrystalline ..beta..-SiC films. The critical energy of approx. =16 eV/atom required for the amorphization of ..beta..-SiC via implantation of /sup 27/Al/sup +/ and /sup 31/P/sup +/ was determined using the TRIM84 computer program for calculation of the damage-energy profiles coupled with the results of RBS/ion channeling analyses. In order to recrystallize amorphized layers created by the individual implantation of all four ion species, thermal annealing at 1600, 1700, or 1800/sup 0/C was employed. Characterization of the recrystallized layers was performed using XTEM. Examples of SPE regrown layers containing precipitates and dislocation loops, highly faulted-microtwinned regions, and random crystallites were observed.

  6. A Study of The Evolution of The Silicon Nanocrystallites in The Amorphous Silicon Carbide Under Argon Dilution of the Source Gases

    Directory of Open Access Journals (Sweden)

    A. Kole

    2011-01-01

    Full Text Available Structural evolution of the hydrogenated amorphous silicon carbide (a-SiC:H films deposited by rf-PECVD from a mixture of SiH4 and CH4 diluted in Ar shows that a smooth transition from amorphous to nanocrystalline phase occurs in the material by increasing the Ar dilution. The optical band gap (Eg decreases from 1.99 eV to 1.91 eV and the H-content (CH decreases from 14.32 at% to 5.29 at% by increasing the dilution from 94 % to 98 %. at 98 % Ar dilution, the material contains irregular shape Si nanocrystallites with sizes over 10 nm. Increasing the Ar dilution further to 98.4 % leads to a reduction of the size of the Si nanocrystals to regular shape Si quantum dots of size about 5 nm. The quantum confinement effect is apparent from the increase in the Eg value to 2.6 eV at 98.4 % Ar dilution. Formation of Si quantum dots may be explained by the etching of the nanocrystallites of Si by the energetic ion bombardment from the plasma.

  7. Spectroscopy and structural properties of amorphous and nanocrystalline silicon carbide thin films

    NARCIS (Netherlands)

    Halindintwali, Sylvain; Knoesen, D.; Julies, B.A.; Arendse, C.J.; Muller, T.; Gengler, Régis Y.N.; Rudolf, P.; Loosdrecht, P.H.M. van

    2011-01-01

    Amorphous SiC:H thin films were grown by hot wire chemical vapour deposition from a SiH4/CH4/H2 mixture at a substrate temperature below 400 °C. Thermal annealing in an argon environment up to 900 °C shows that the films crystallize as μc-Si:H and SiC with a porous microstructure that favours an oxi

  8. Silicon carbide reinforced silicon carbide composite

    Science.gov (United States)

    Lau, Sai-Kwing (Inventor); Calandra, Salvatore J. (Inventor); Ohnsorg, Roger W. (Inventor)

    2001-01-01

    This invention relates to a process comprising the steps of: a) providing a fiber preform comprising a non-oxide ceramic fiber with at least one coating, the coating comprising a coating element selected from the group consisting of carbon, nitrogen, aluminum and titanium, and the fiber having a degradation temperature of between 1400.degree. C. and 1450.degree. C., b) impregnating the preform with a slurry comprising silicon carbide particles and between 0.1 wt % and 3 wt % added carbon c) providing a cover mix comprising: i) an alloy comprising a metallic infiltrant and the coating element, and ii) a resin, d) placing the cover mix on at least a portion of the surface of the porous silicon carbide body, e) heating the cover mix to a temperature between 1410.degree. C. and 1450.degree. C. to melt the alloy, and f) infiltrating the fiber preform with the melted alloy for a time period of between 15 minutes and 240 minutes, to produce a ceramic fiber reinforced ceramic composite.

  9. Diamond-silicon carbide composite and method

    Science.gov (United States)

    Zhao, Yusheng

    2011-06-14

    Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

  10. Characterization of Silicon Carbide.

    Science.gov (United States)

    The various electrical and structural measurement techniques for silicon carbide are described. The electrical measurements include conductivity, resistivity, carrier concentration, mobility, doping energy levels, and lifetime. The structural measurements include polytype determination and crystalline perfection. Both bulk and epitaxial films are included.

  11. Composition Comprising Silicon Carbide

    Science.gov (United States)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy L. (Inventor)

    2012-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  12. Silicon carbide sewing thread

    Science.gov (United States)

    Sawko, Paul M. (Inventor)

    1995-01-01

    Composite flexible multilayer insulation systems (MLI) were evaluated for thermal performance and compared with currently used fibrous silica (baseline) insulation system. The systems described are multilayer insulations consisting of alternating layers of metal foil and scrim ceramic cloth or vacuum metallized polymeric films quilted together using ceramic thread. A silicon carbide thread for use in the quilting and the method of making it are also described. These systems provide lightweight thermal insulation for a variety of uses, particularly on the surface of aerospace vehicles subject to very high temperatures during flight.

  13. Investigation of the agglomeration and amorphous transformation effects of neutron irradiation on the nanocrystalline silicon carbide (3C-SiC) using TEM and SEM methods

    Science.gov (United States)

    Huseynov, Elchin M.

    2017-04-01

    Nanocrystalline 3C-SiC particles irradiated by neutron flux during 20 h in TRIGA Mark II light water pool type research reactor. Silicon carbide nanoparticles were analyzed by Scanning Electron Microscope (SEM) and Transmission Electron Microscopy (TEM) devices before and after neutron irradiation. The agglomeration of nanoparticles was studied comparatively before and after neutron irradiation. After neutron irradiation the amorphous layer surrounding the nanoparticles was analyzed in TEM device. Neutron irradiation defects in the 3C-SiC nanoparticles and other effects investigated by TEM device. The effect of irradiation on the crystal structure of the nanomaterial was studied by selected area electron diffraction (SAED) and electron diffraction patterns (EDP) analysis.

  14. Studies of silicon carbide and silicon carbide nitride thin films

    Science.gov (United States)

    Alizadeh, Zhila

    Silicon carbide semiconductor technology is continuing to advance rapidly. The excellent physical and electronic properties of silicon carbide recently take itself to be the main focused power device material for high temperature, high power, and high frequency electronic devices because of its large band gap, high thermal conductivity, and high electron saturation drift velocity. SiC is more stable than Si because of its high melting point and mechanical strength. Also the understanding of the structure and properties of semiconducting thin film alloys is one of the fundamental steps toward their successful application in technologies requiring materials with tunable energy gaps, such as solar cells, flat panel displays, optical memories and anti-reflecting coatings. Silicon carbide and silicon nitrides are promising materials for novel semiconductor applications because of their band gaps. In addition, they are "hard" materials in the sense of having high elastic constants and large cohesive energies and are generally resistant to harsh environment, including radiation. In this research, thin films of silicon carbide and silicon carbide nitride were deposited in a r.f magnetron sputtering system using a SiC target. A detailed analysis of the surface chemistry of the deposited films was performed using x-ray photoelectron spectroscopy (XPS), Fourier Transform Infrared Spectroscopy (FTIR) and Raman spectroscopy whereas structure and morphology was studied atomic force microscopy (AFM), and nonoindentation.

  15. Tailoring the Mechanical Properties of High-Aspect-Ratio Carbon Nanotube Arrays using Amorphous Silicon Carbide Coatings

    NARCIS (Netherlands)

    Poelma, R.H.; Morana, B.; Vollebregt, S.; Schlangen, H.E.J.G.; Van Zeijl, H.W.; Fan, X.; Zhang, G.Q.

    2014-01-01

    The porous nature of carbon nanotube (CNT) arrays allows for the unique opportunity to tailor their mechanical response by the infiltration and deposition of nanoscale conformal coatings. Here, we fabricate novel photo-lithographically defined CNT pillars that are conformally coated with amorphous s

  16. Investigation of amorphization energies for heavy ion implants into silicon carbide at depths far beyond the projected ranges

    Science.gov (United States)

    Friedland, E.

    2017-01-01

    At ion energies with inelastic stopping powers less than a few keV/nm, radiation damage is thought to be due to atomic displacements by elastic collisions only. However, it is well known that inelastic processes and non-linear effects due to defect interaction within collision cascades can significantly increase or decrease damage efficiencies. The importance of these processes changes significantly along the ion trajectory and becomes negligible at some distance beyond the projected range, where damage is mainly caused by slowly moving secondary recoils. Hence, in this region amorphization energies should become independent of the ion type and only reflect the properties of the target lattice. To investigate this, damage profiles were obtained from α-particle channeling spectra of 6H-SiC wafers implanted at room temperature with ions in the mass range 84 ⩽ M ⩽ 133, employing the computer code DICADA. An average amorphization dose of (0.7 ± 0.2) dpa and critical damage energy of (17 ± 6) eV/atom are obtained from TRIM simulations at the experimentally observed boundary positions of the amorphous zones.

  17. A comparison of mechanical properties of three MEMS materials - silicon carbide, ultrananocrystalline diamond, and hydrogen-free tetrahedral amorphous carbon (Ta-C)

    Energy Technology Data Exchange (ETDEWEB)

    Carlisle, John A. (Argonne National Laboratory, Argonne, IL); Moldovan, N. (Northwestern University, Evanston, IL); Xiao, Xingcheng (Argonne National Laboratory, Argonne, IL); Zorman, C. A. (Case Western Reserve University, Cleveland, OH); Mancini, D. C. (Argonne National Laboratory, Argonne, IL); Peng, B. (Northwestern University, Evanston, IL); Espinosa, H. D. (Northwestern University, Evanston, IL); Friedmann, Thomas Aquinas; Auciello, Orlando, (Argonne National Laboratory, Argonne, IL)

    2004-06-01

    Many MEMS devices are based on polysilicon because of the current availability of surface micromachining technology. However, polysilicon is not the best choice for devices where extensive sliding and/or thermal fields are applied due to its chemical, mechanical and tribological properties. In this work, we investigated the mechanical properties of three new materials for MEMS/NEMS devices: silicon carbide (SiC) from Case Western Reserve University (CWRU), ultrananocrystalline diamond (UNCD) from Argonne National Laboratory (ANL), and hydrogen-free tetrahedral amorphous carbon (ta-C) from Sandia National Laboratories (SNL). Young's modulus, characteristic strength, fracture toughness, and theoretical strength were measured for these three materials using only one testing methodology - the Membrane Deflection Experiment (MDE) developed at Northwestern University. The measured values of Young's modulus were 430GPa, 960GPa, and 800GPa for SiC, UNCD, and ta-C, repectively. Fracture toughness measurments resulted in values of 3.2, 4.5, and 6.2 MPa x m{sup 1/2}, respectively. The strengths were found to follow a Weibull distribution but their scaling was found to be controlled by different specimen size parameters. Therefore, a cross comparison of the strengths is not fully meaningful. We instead propose to compare their theoretical strengths as determined by employing Novozhilov fracture criterion. The estimated theoretical strength for SiC is 10.6GPa at a characteristic length of 58nm, for UNCD is 18.6GPa at a characteristic length of 37nm, and for ta-C is 25.4GPa at a characteristic length of 38nm. The techniques used to obtained these results as well as microscopic fractographic analyses are summarized in the article. We also highlight the importance of characterizing mechanical properties of MEMS materials by means of only one simple and accurate experimental technique.

  18. Methods for producing silicon carbide fibers

    Energy Technology Data Exchange (ETDEWEB)

    Garnier, John E.; Griffith, George W.

    2016-03-01

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  19. Silicon carbide fibers and articles including same

    Energy Technology Data Exchange (ETDEWEB)

    Garnier, John E; Griffith, George W

    2015-01-27

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  20. Thermo-Mechanical Characterization of Silicon Carbide-Silicon Carbide Composites at Elevated Temperatures Using a Unique Combustion Facility

    Science.gov (United States)

    2009-09-10

    F THERMO-MECHANICAL CHARACTERIZATION OF SILICON CARBIDE - SILICON CARBIDE COMPOSITES AT ELEVATED...MECHANICAL CTERIZATION OF SILICON CARBIDE -SILIC BIDE COMPOSITES AT LEVATED TEMPER S USING A UNIQUE COMBUSTION FACILITY DISSERTATI N Ted T. Kim...THERMO-MECHANICAL CHARACTERIZATION OF SILICON CARBIDE - SILICON CARBIDE COMPOSITES AT ELEVATED TEMPERATURES USING A UNIQUE COMBUSTION FACILITY

  1. High-Q silicon carbide photonic-crystal cavities

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jonathan Y. [Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States); Lu, Xiyuan [Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States); Lin, Qiang, E-mail: qiang.lin@rochester.edu [Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States); Institute of Optics, University of Rochester, Rochester, New York 14627 (United States)

    2015-01-26

    We demonstrate one-dimensional photonic-crystal nanobeam cavities in amorphous silicon carbide. The fundamental mode exhibits intrinsic optical quality factor as high as 7.69 × 10{sup 4} with mode volume ∼0.60(λ/n){sup 3} at wavelength 1.5 μm. A corresponding Purcell factor value of ∼10{sup 4} is the highest reported to date in silicon carbide optical cavities. The device exhibits great potential for integrated nonlinear photonics and cavity nano-optomechanics.

  2. Influence of gas environment on synthesis of silicon carbide and some carbides and carbonitrides of d-group transition metals through reaction between metal powders and amorphous carbon powders in a solar furnace at P.S.A. (plataforma solar de Almeria)

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, D.; Rodriguez, J. [Plataforma Solar de Almeria, PSA, Centro Europeo de Ensayos de Energia Solar, Centro de Investigaciones Energeticas Medioambientales y Tecnologicas, Tabernas (Spain); Guerra Rosa, L.; Cruz Fernandes, J. [Instituto Superior Tecnico, IST, Dept. de Engenharia de Materiais, Lisboa (Portugal); Shohoji, N. [Instituto Nacional de Engenharia e Tecnologia Industrial, INETI, Instituto de Materiais e Tecnologias de Producao, Dept. de Tecnologias de Producao, Lisboa (Portugal)

    1999-03-01

    Refractory carbides and carbonitrides including silicon carbide SiC, tungsten carbide WC, titanium carbide TiC{sub x} (0.5amorphous carbon powders through heating in a solar furnace under controlled atmosphere (Ar or N{sub 2}). Under irradiation of the solar energy flux 1,350 kW/m{sup 2} (ca. 1650 deg C in terms of measured temperature) for 30 min in Ar atmosphere, Si, W and Ti were converted to SiC, WC and TiC{sub x}, respectively. By the similar reaction undertaken in N{sub 2} atmosphere, Si and W were converted to SiC and WC, respectively, but carbonitride TiC{sub x}N{sub y} formed from Ti. No special influence of atmosphere was detected on the WC formation, but conversion to SiC from Si was somewhat retarded in N{sub 2} atmosphere. In either Ar or N{sub 2} atmosphere, progress of graphitization of amorphous carbon was not detectable by X-ray diffraction analysis in the reaction with Si and Ti but graphitization of amorphous carbon appeared to be significantly accelerated in the reaction with W. (authors)

  3. Hydroxide catalysis bonding of silicon carbide

    NARCIS (Netherlands)

    Veggel, A.A. van; Ende, D.A. van den; Bogenstahl, J.; Rowan, S.; Cunningham, W.; Gubbels, G.H.M.; Nijmeijer, H.

    2008-01-01

    For bonding silicon carbide optics, which require extreme stability, hydroxide catalysis bonding is considered [Rowan, S., Hough, J. and Elliffe, E., Silicon carbide bonding. UK Patent 040 7953.9, 2004. Please contact Mr. D. Whiteford for further information: D.Whiteford@admin.gla.ac.uk]. This techn

  4. Process for making silicon carbide reinforced silicon carbide composite

    Science.gov (United States)

    Lau, Sai-Kwing (Inventor); Calandra, Salavatore J. (Inventor); Ohnsorg, Roger W. (Inventor)

    1998-01-01

    A process comprising the steps of: a) providing a fiber preform comprising a non-oxide ceramic fiber with at least one coating, the coating comprising a coating element selected from the group consisting of carbon, nitrogen, aluminum and titanium, and the fiber having a degradation temperature of between 1400.degree. C. and 1450.degree. C., b) impregnating the preform with a slurry comprising silicon carbide particles and between 0.1 wt % and 3 wt % added carbon c) providing a cover mix comprising: i) an alloy comprising a metallic infiltrant and the coating element, and ii) a resin, d) placing the cover mix on at least a portion of the surface of the porous silicon carbide body, e) heating the cover mix to a temperature between 1410.degree. C. and 1450.degree. C. to melt the alloy, and f) infiltrating the fiber preform with the melted alloy for a time period of between 15 minutes and 240 minutes, to produce a ceramic fiber reinforced ceramic composite.

  5. Amorphous silicon germanium carbide photo sensitive bipolar junction transistor with a base-contact and a continuous tunable high current gain

    Energy Technology Data Exchange (ETDEWEB)

    Bablich, A., E-mail: andreas.bablich@uni-siegen.de [Department of Electrical and Computer Engineering, Institute for Microsystem Technologies, University of Siegen, Hoelderlinstrasse 3, 57076 Siegen (Germany); Merfort, C., E-mail: merfort@imt.e-technik.uni-siegen.de [Department of Electrical and Computer Engineering, Institute for Microsystem Technologies, University of Siegen, Hoelderlinstrasse 3, 57076 Siegen (Germany); Eliasz, J., E-mail: jacek.eliasz@student.uni-siegen.de [Department of Electrical and Computer Engineering, Institute for Microsystem Technologies, University of Siegen, Hoelderlinstrasse 3, 57076 Siegen (Germany); Schäfer-Eberwein, H., E-mail: heiko.schaefer@uni-siegen.de [Department of Electrical and Computer Engineering, Institute of High Frequency and Quantum Electronics, University of Siegen, Hoelderlinstrasse 3, 57076 Siegen (Germany); Haring-Bolivar, P., E-mail: peter.haring@uni-siegen.de [Department of Electrical and Computer Engineering, Institute of High Frequency and Quantum Electronics, University of Siegen, Hoelderlinstrasse 3, 57076 Siegen (Germany); Boehm, M., E-mail: markus.boehm@uni-siegen.de [Department of Electrical and Computer Engineering, Institute for Microsystem Technologies, University of Siegen, Hoelderlinstrasse 3, 57076 Siegen (Germany)

    2014-05-02

    In this paper, the design, fabrication and characterization of an amorphous silicon germanium carbide (a-SiGeC:H) photo sensitive bipolar junction transistor (PS-BJT) with three terminals are presented. Whereas the current gain of similar transistor devices presented in the past (Wu et al., 1984; Hwang et al., 1993; Nascetti and Caputo, 2002; Chang et al., 1985a,b; Wu et al, 1985; Hong et al., 1990) can only be controlled with photo induced charge generation, the n–i–δp–i–n structure developed features a contacted base to provide the opportunity to adjust the current gain optically and electrically, too. Electron microscope-, current-/voltage- and spectral measurements were performed to study the PS-BJT behavior and calculate the electrical and optical current gain. The spectral response maximum of the base–collector diode has a value of 170 mA/W applying a base–collector voltage of − 1 V and is located at 620 nm. The base–emitter diode reaches a sensitivity of 25.7 mA/W at 530 nm with a base-emitter voltage of − 3 V. The good a-Si:H transport properties are validated in a μτ-product of 4.6 × 10{sup −6} cm{sup 2} V s, which is sufficient to reach a continuous base- and photo-tunable current gain of up to − 126 at a base current of I{sub B} = + 10 nA and a collector–emitter voltage of V{sub CE} = − 3 V. The transistor obtains a maximum collector current of − 65.5 μA (V{sub CE} = − 3 V) and + 56.2 μA (V{sub CE} = + 3 V) at 10,000 lx 5300 K white-light illumination. At 3300 lx, the electrical current gain reaches a value of + 100 (V{sub CE} = + 2 V) at I{sub B} = 10 nA. With a negative base current of I{sub B} = − 10 nA the electrical gain can be adjusted between 87 (V{sub CE} = + 2 V) and − 106 (V{sub CE} = -3 V), respectively. When no base charge is applied, the transistor is “off” for V{sub CE} > − 3 V. Reducing the base current increases the electrical current gain. Operating with a voltage V{sub CE} of just ± 2 V

  6. Carbothermal synthesis of silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Janney, M.A.; Wei, G.C.; Kennedy, C.R.; Harris, L.A.

    1985-05-01

    Silicon carbide powders were synthesized from various silica and carbon sources by a carbothermal reduction process at temperatures between 1500 and 1600/sup 0/C. The silica sources were fumed silica, methyltrimethoxysilane, and microcrystalline quartz. The carbon sources were petroleum pitch, phenolic resin, sucrose, and carbon black. Submicron SiC powders were synthesized. Their morphologies included equiaxed loosely-bound agglomerates, equiaxed hard-shell agglomerates, and whiskers. Morphology changed with the furnace atmosphere (argon, nitrogen, or nitrogen-4% hydrogen). The best sintering was observed in SiC derived from the fumed-silica-pitch and fumed-silica-sucrose precursors. The poorest sintering was observed in SiC derived from microcrystalline quartz and carbon black. 11 refs., 16 figs., 10 tabs.

  7. Synthesis of silicon carbide at room temperature from colloidal suspensions of silicon dioxide and carbon nanotubes

    Science.gov (United States)

    Zhukalin, D. A.; Tuchin, A. V.; Kulikova, T. V.; Bityutskaya, L. A.

    2015-11-01

    Experimental and theoretical approaches were used for the investigation of mechanisms and conditions of self-organized nanostructures formation in the drying drop of the mixture of colloidal suspensions of nanoscale amorphous silicon dioxide and carbon nanotubes. The formation of rodlike structures with diameter 250-300nm and length ∼4pm was revealed. The diffraction analysis of the obtained nanostructures showed the formation of the silicon carbide phase at room temperature.

  8. Characterization of silicon-silicon carbide ceramic derived from carbon-carbon silicon carbide composites

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Vijay K. [Indian Institute of Technology, Varanasi (India). Dept. of Mechanical Engineering; Krenkel, Walter [Univ. of Bayreuth (Germany). Dept. of Ceramic Materials Engineering

    2013-04-15

    The main objective of the present work is to process porous silicon - silicon carbide (Si - SiC) ceramic by the oxidation of carboncarbon silicon carbide (C/C - SiC) composites. Phase studies are performed on the oxidized porous composite to examine the changes due to the high temperature oxidation. Further, various characterization techniques are performed on Si- SiC ceramics in order to study the material's microstructure. The effects of various parameters such as fiber alignment (twill weave and short/chopped fiber) and phenolic resin type (resol and novolak) are characterized.

  9. Selective etching of silicon carbide films

    Science.gov (United States)

    Gao, Di; Howe, Roger T.; Maboudian, Roya

    2006-12-19

    A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

  10. Synthesis and Photoluminescence Property of Silicon Carbide Nanowires Via Carbothermic Reduction of Silica.

    Science.gov (United States)

    Luo, Xiaogang; Ma, Wenhui; Zhou, Yang; Liu, Dachun; Yang, Bin; Dai, Yongnian

    2009-11-11

    Silicon carbide nanowires have been synthesized at 1400 degrees C by carbothermic reduction of silica with bamboo carbon under normal atmosphere pressure without metallic catalyst. X-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, transmission electron microscopy and Fourier transformed infrared spectroscopy were used to characterize the silicon carbide nanowires. The results show that the silicon carbide nanowires have a core-shell structure and grow along direction. The diameter of silicon carbide nanowires is about 50-200 nm and the length from tens to hundreds of micrometers. The vapor-solid mechanism is proposed to elucidate the growth process. The photoluminescence of the synthesized silicon carbide nanowires shows significant blueshifts, which is resulted from the existence of oxygen defects in amorphous layer and the special rough core-shell interface.

  11. Atomic structure of amorphous shear bands in boron carbide.

    Science.gov (United States)

    Reddy, K Madhav; Liu, P; Hirata, A; Fujita, T; Chen, M W

    2013-01-01

    Amorphous shear bands are the main deformation and failure mode of super-hard boron carbide subjected to shock loading and high pressures at room temperature. Nevertheless, the formation mechanisms of the amorphous shear bands remain a long-standing scientific curiosity mainly because of the lack of experimental structure information of the disordered shear bands, comprising light elements of carbon and boron only. Here we report the atomic structure of the amorphous shear bands in boron carbide characterized by state-of-the-art aberration-corrected transmission electron microscopy. Distorted icosahedra, displaced from the crystalline matrix, were observed in nano-sized amorphous bands that produce dislocation-like local shear strains. These experimental results provide direct experimental evidence that the formation of amorphous shear bands in boron carbide results from the disassembly of the icosahedra, driven by shear stresses.

  12. Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor

    Science.gov (United States)

    Barnard, Thomas Duncan (Inventor); Lipowitz, Jonathan (Inventor); Nguyen, Kimmai Thi (Inventor)

    2001-01-01

    A process for producing polycrystalline silicon carbide by heating an amorphous ceramic fiber that contains silicon and carbon in an environment containing boron oxide vapor. The boron oxide vapor is produced in situ by the reaction of a boron containing material such as boron carbide and an oxidizing agent such as carbon dioxide, and the amount of boron oxide vapor can be controlled by varying the amount and rate of addition of the oxidizing agent.

  13. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui

    2015-04-09

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  14. Silicon Carbide Solar Cells Investigated

    Science.gov (United States)

    Bailey, Sheila G.; Raffaelle, Ryne P.

    2001-01-01

    The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

  15. Silicon carbide sintered body manufactured from silicon carbide powder containing boron, silicon and carbonaceous additive

    Science.gov (United States)

    Tanaka, Hidehiko

    1987-01-01

    A silicon carbide powder of a 5-micron grain size is mixed with 0.15 to 0.60 wt% mixture of a boron compound, i.e., boric acid, boron carbide (B4C), silicon boride (SiB4 or SiB6), aluminum boride, etc., and an aluminum compound, i.e., aluminum, aluminum oxide, aluminum hydroxide, aluminum carbide, etc., or aluminum boride (AlB2) alone, in such a proportion that the boron/aluminum atomic ratio in the sintered body becomes 0.05 to 0.25 wt% and 0.05 to 0.40 wt%, respectively, together with a carbonaceous additive to supply enough carbon to convert oxygen accompanying raw materials and additives into carbon monoxide.

  16. Chemical Modification Methods of Nanoparticles of Silicon Carbide Surface

    OpenAIRE

    Anton S. Yegorov; Vitaly S. Ivanov; Alexey V. Antipov; Alyona I. Wozniak; Kseniia V. Tcarkova.

    2015-01-01

    silicon carbide exhibits exceptional properties: high durability, high thermal conductivity, good heat resistance, low thermal expansion factor and chemical inactivity. Reinforcement with silicon carbide nanoparticles increases polymer’s tensile strength and thermal stability.Chemical methods of modification of the silicon carbide surface by means of variety of reagents from ordinary molecules to macromolecular polymers are reviewed in the review.The structure of silicon carbide surface layer...

  17. Bioactivation of biomorphous silicon carbide bone implants.

    Science.gov (United States)

    Will, Julia; Hoppe, Alexander; Müller, Frank A; Raya, Carmen T; Fernández, Julián M; Greil, Peter

    2010-12-01

    Wood-derived silicon carbide (SiC) offers a specific biomorphous microstructure similar to the cellular pore microstructure of bone. Compared with bioactive ceramics such as calcium phosphate, however, silicon carbide is considered not to induce spontaneous interface bonding to living bone. Bioactivation by chemical treatment of biomorphous silicon carbide was investigated in order to accelerate osseointegration and improve bone bonding ability. Biomorphous SiC was processed from sipo (Entrandrophragma utile) wood by heating in an inert atmosphere and infiltrating the resulting carbon replica with liquid silicon melt at 1450°C. After removing excess silicon by leaching in HF/HNO₃ the biomorphous preform consisted of β-SiC with a small amount (approximately 6wt.%) of unreacted carbon. The preform was again leached in HCl/HNO₃ and finally exposed to CaCl₂ solution. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared analyses proved that oxidation of the residual carbon at the surface induced formation of carboxyl [COO⁻] groups, which triggered adsorption of Ca(2+), as confirmed by XPS and inductively coupled plasma optical emission spectroscopy measurements. A local increase in Ca(2+) concentration stimulated in vitro precipitation of Ca₅(PO₄)₃OH (HAP) on the silicon carbide preform surface during exposure to simulated body fluid, which indicates a significantly increased bone bonding activity compared with SiC.

  18. Mechanical Properties of Crystalline Silicon Carbide Nanowires.

    Science.gov (United States)

    Zhang, Huan; Ding, Weiqiang; Aidun, Daryush K

    2015-02-01

    In this paper, the mechanical properties of crystalline silicon carbide nanowires, synthesized with a catalyst-free chemical vapor deposition method, were characterized with nanoscale tensile testing and mechanical resonance testing methods inside a scanning electron microscope. Tensile testing of individual silicon carbide nanowire was performed to determine the tensile properties of the material including the tensile strength, failure strain and Young's modulus. The silicon carbide nanowires were also excited to mechanical resonance in the scanning electron microscope vacuum chamber using mechanical excitation and electrical excitation methods, and the corresponding resonance frequencies were used to determine the Young's modulus of the material according to the simple beam theory. The Young's modulus values from tensile tests were in good agreement with the ones obtained from the mechanical resonance tests.

  19. Silicon carbide, an emerging high temperature semiconductor

    Science.gov (United States)

    Matus, Lawrence G.; Powell, J. Anthony

    1991-01-01

    In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

  20. Recent trends in silicon carbide device research

    Directory of Open Access Journals (Sweden)

    Munish Vashishath

    2008-08-01

    Full Text Available Silicon carbide (SiC has revolutionised semiconductor power device performance. It is a wide band gap semiconductor with an energy gap wider than 2eV and possesses extremely high power, high voltage switching characteristics and high thermal, chemical and mechanical stability. The SiC wafers are available in 6H, 4H, 2H and 3C polytypes. Because of its wide band gap, the leakage current of SiC is many orders of magnitude lower than that of silicon. Also, forward resistance of SiC power devices is approximately 200 times lower than that of conventional silicon devices. The breakdown voltage of SiC is 8-10 times higher than that of silicon. In this paper, silicon carbide Schottky barrier diodes, power MOSFETs, UMOSFET, lateral power MOSFET, SIT (static induction transistor, and nonvolatile memories are discussed along with their characteristics and applications.

  1. New process of silicon carbide purification intended for silicon passivation

    Science.gov (United States)

    Barbouche, M.; Zaghouani, R. Benabderrahmane; Benammar, N. E.; Aglieri, V.; Mosca, M.; Macaluso, R.; Khirouni, K.; Ezzaouia, H.

    2017-01-01

    In this work, we report on a new, efficient and low cost process of silicon carbide (SiC) powder purification intended to be used in photovoltaic applications. This process consists on the preparation of porous silicon carbide layers followed by a photo-thermal annealing under oxygen atmosphere and chemical treatment. The effect of etching time on impurities removal efficiency was studied. Inductively coupled plasma atomic emission spectrometry (ICP-AES) results showed that the best result was achieved for an etching time of 10 min followed by gettering at 900 °C during 1 h. SiC purity is improved from 3N (99.9771%) to 4N (99.9946%). Silicon carbide thin films were deposited onto silicon substrates by pulsed laser deposition technique (PLD) using purified SiC powder as target. Significant improvement of the minority carrier lifetime was obtained encouraging the use of SiC as a passivation layer for silicon.

  2. Synthesis of silicon carbide thin films with polycarbosilane (PCS)

    Energy Technology Data Exchange (ETDEWEB)

    Colombo, P. [Univ. di Padova (Italy). Dept. di Ingegneria Meccanica-Settore Materiali; Paulson, T.E.; Pantano, C.G. [Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering

    1997-09-01

    Polycarbosilane (PCS) thin films were deposited on silicon (and other) substrates and heat treated under vacuum ({approximately}10{sup {minus}6} torr) at temperatures in the range of 200--1,200 C. At temperatures in the range of 1,000--1,200 C, the initially amorphous PCS films transformed to polycrystalline {beta}-silicon carbide ({beta}-SiC). Although PCS films could be deposited at thickness up to 2 {micro}m, the films with thicknesses >1 {micro}m could not be transformed to SiC without extensive cracking. The resulting SiC coatings were characterized using Fourier transform infrared spectroscopy, glancing-angle X-ray diffractometry, secondary-ion mass spectroscopy, Raman spectroscopy, transmission electron microscopy, and scanning electron microscopy. The temperature and time dependence of the amorphous-to-crystalline transition could be associated with the evolution of free carbon, oxygen, and hydrogen in the films.

  3. Silicon carbide microsystems for harsh environments

    CERN Document Server

    Wijesundara, Muthu B J

    2011-01-01

    Silicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system components, key issues when integrating these components into systems, and other hurdles in harsh environment operation. The authors use the SiC technology platform suite the model platform for developing harsh environment microsystems and then detail the current status of the specific individual technologies (electronics, MEMS, packaging). Additionally, methods

  4. Shock-induced localized amorphization in boron carbide.

    Science.gov (United States)

    Chen, Mingwei; McCauley, James W; Hemker, Kevin J

    2003-03-01

    High-resolution electron microscope observations of shock-loaded boron carbide have revealed the formation of nanoscale intragranular amorphous bands that occur parallel to specific crystallographic planes and contiguously with apparent cleaved fracture surfaces. This damage mechanism explains the measured, but not previously understood, decrease in the ballistic performance of boron carbide at high impact rates and pressures. The formation of these amorphous bands is also an example of how shock loading can result in the synthesis of novel structures and materials with substantially altered properties.

  5. Casimir force measurements from silicon carbide surfaces

    NARCIS (Netherlands)

    Sedighi, M.; Svetovoy, V. B.; Palasantzas, G.

    2016-01-01

    Using an atomic force microscope we performed measurements of the Casimir force between a gold-coated (Au) microsphere and doped silicon carbide (SiC) samples. The last of these is a promising material for devices operating under severe environments. The roughness of the interacting surfaces was mea

  6. Method of preparing a porous silicon carbide

    NARCIS (Netherlands)

    Moene, R.; Tazelaar, F.W.; Makkee, M.; Moulijn, J.A.

    1994-01-01

    Abstract of NL 9300816 (A) Described is a method of preparing a porous silicon carbide suitable for use as a catalyst or as a catalyst support. Porous carbon is provided with a catalyst which is suitable for catalysing gasification of carbon with hydrogen, and with a catalyst suitable for cataly

  7. Silicon Carbide Technologies for Lightweighted Aerospace Mirrors

    Science.gov (United States)

    2008-09-01

    silicon carbide (SiC) based materials. It is anticipated that SiC can be utilized for most applications from cryogenic to high temperatures. This talk will focus on describing the SOA for these (near term) SiC technology solutions for making mirror structural substrates, figuring and finishing technologies being investigated to reduce cost time

  8. Casimir forces from conductive silicon carbide surfaces

    NARCIS (Netherlands)

    Sedighi Ghozotkhar, Mehdi; Svetovoy, V. B.; Broer, W. H.; Palasantzas, G.

    2014-01-01

    Samples of conductive silicon carbide (SiC), which is a promising material due to its excellent properties for devices operating in severe environments, were characterized with the atomic force microscope for roughness, and the optical properties were measured with ellipsometry in a wide range of fr

  9. Depressurization amorphization of single-crystal boron carbide.

    Science.gov (United States)

    Yan, X Q; Tang, Z; Zhang, L; Guo, J J; Jin, C Q; Zhang, Y; Goto, T; McCauley, J W; Chen, M W

    2009-02-20

    We report depressurization amorphization of single-crystal boron carbide (B4C) investigated by in situ high-pressure Raman spectroscopy. It was found that localized amorphization of B4C takes place during unloading from high pressures, and nonhydrostatic stresses play a critical role in the high-pressure phase transition. First-principles molecular dynamics simulations reveal that the depressurization amorphization results from pressure-induced irreversible bending of C-B-C atomic chains cross-linking 12 atom icosahedra at the rhombohedral vertices.

  10. Novel fabrication of silicon carbide based ceramics for nuclear applications

    Science.gov (United States)

    Singh, Abhishek Kumar

    Advances in nuclear reactor technology and the use of gas-cooled fast reactors require the development of new materials that can operate at the higher temperatures expected in these systems. These materials include refractory alloys based on Nb, Zr, Ta, Mo, W, and Re; ceramics and composites such as SiC--SiCf; carbon--carbon composites; and advanced coatings. Besides the ability to handle higher expected temperatures, effective heat transfer between reactor components is necessary for improved efficiency. Improving thermal conductivity of the fuel can lower the center-line temperature and, thereby, enhance power production capabilities and reduce the risk of premature fuel pellet failure. Crystalline silicon carbide has superior characteristics as a structural material from the viewpoint of its thermal and mechanical properties, thermal shock resistance, chemical stability, and low radioactivation. Therefore, there have been many efforts to develop SiC based composites in various forms for use in advanced energy systems. In recent years, with the development of high yield preceramic precursors, the polymer infiltration and pyrolysis (PIP) method has aroused interest for the fabrication of ceramic based materials, for various applications ranging from disc brakes to nuclear reactor fuels. The pyrolysis of preceramic polymers allow new types of ceramic materials to be processed at relatively low temperatures. The raw materials are element-organic polymers whose composition and architecture can be tailored and varied. The primary focus of this study is to use a pyrolysis based process to fabricate a host of novel silicon carbide-metal carbide or oxide composites, and to synthesize new materials based on mixed-metal silicocarbides that cannot be processed using conventional techniques. Allylhydridopolycarbosilane (AHPCS), which is an organometal polymer, was used as the precursor for silicon carbide. Inert gas pyrolysis of AHPCS produces near-stoichiometric amorphous

  11. Genesis Silicon Carbide Concentrator Target 60003 Preliminary Ellipsometry Mapping Results

    Science.gov (United States)

    Calaway, M. J.; Rodriquez, M. C.; Stansbery, E. K.

    2007-01-01

    The Genesis concentrator was custom designed to focus solar wind ions primarily for terrestrial isotopic analysis of O-17/O-16 and O-18/O-16 to +/-1%, N-15/N-14 to +/-1%, and secondarily to conduct elemental and isotopic analysis of Li, Be, and B. The circular 6.2 cm diameter concentrator target holder was comprised of four quadrants of highly pure semiconductor materials that included one amorphous diamond-like carbon, one C-13 diamond, and two silicon carbide (SiC). The amorphous diamond-like carbon quadrant was fractured upon impact at Utah Test and Training Range (UTTR), but the remaining three quadrants survived fully intact and all four quadrants hold an important collection of solar wind. The quadrants were removed from the target holder at NASA Johnso n Space Center Genesis Curation Laboratory in April 2005, and have been housed in stainless steel containers under continual nitrogen purge since time of disintegration. In preparation for allocation of a silicon carbide target for oxygen isotope analyses at UCLA, the two SiC targets were photographed for preliminary inspection of macro particle contamination from the hard non-nominal landing as well as characterized by spectroscopic ellipsometry to evaluate thin film contamination. This report is focused on Genesis SiC target sample number 60003.

  12. Kinetics and Mechanisms of Creep in Sintered Alpha Silicon Carbide and Niobium Carbide.

    Science.gov (United States)

    1985-09-18

    CARBIDE AND NIOBIUM CARBIDE Supported by 30 F (DMR-812-0804) and ARO (MIPR’s 43-48, 127-83, 141-84) U August, 1985 NCSU .LET tow A CL School of Engineering...SILICON CARBIDE AND NIOBIUM CARBIDE Supported by NSF (DMR-812-0804) and ARO (MIPR’s 43-48, 127-83, 141-84) August, 1985 L. U. 1’ ’’ b b MASTER COPY - FOR...and Mechanisms of Creep in Sintered May 1, 1982-June 15, 1985 Alpha Silicon Carbide and Niobium Carbide 6. PERFORMING ORG. REPORT NUMBER 7. AUTHOR(*) 11

  13. Tritiated amorphous silicon for micropower applications

    Energy Technology Data Exchange (ETDEWEB)

    Kherani, N.P. [Ontario Hydro Technologies, Toronto, Ontario (Canada)]|[Univ. of Toronto, Ontario (Canada); Kosteski, T.; Zukotynski, S. [Univ. of Toronto, Ontario (Canada); Shmayda, W.T. [Ontario Hydro Technologies, Toronto, Ontario (Canada)

    1995-10-01

    The application of tritiated amorphous silicon as an intrinsic energy conversion semiconductor for radioluminescent structures and betavoltaic devices is presented. Theoretical analysis of the betavoltaic application shows an overall efficiency of 18% for tritiated amorphous silicon. This is equivalent to a 330 Ci intrinsic betavoltaic device producing 1 mW of power for 12 years. Photoluminescence studies of hydrogenated amorphous silicon, a-Si:H, show emission in the infra-red with a maximum quantum efficiency of 7.2% at 50 K; this value drops by 3 orders of magnitude at a temperature of 300 K. Similar studies of hydrogenated amorphous carbon show emission in the visible with an estimated quantum efficiency of 1% at 300 K. These results suggest that tritiated amorphous carbon may be the more promising candidate for room temperature radioluminescence in the visible. 18 refs., 5 figs.

  14. Nonlinear optical imaging of defects in cubic silicon carbide epilayers.

    Science.gov (United States)

    Hristu, Radu; Stanciu, Stefan G; Tranca, Denis E; Matei, Alecs; Stanciu, George A

    2014-06-11

    Silicon carbide is one of the most promising materials for power electronic devices capable of operating at extreme conditions. The widespread application of silicon carbide power devices is however limited by the presence of structural defects in silicon carbide epilayers. Our experiment demonstrates that optical second harmonic generation imaging represents a viable solution for characterizing structural defects such as stacking faults, dislocations and double positioning boundaries in cubic silicon carbide layers. X-ray diffraction and optical second harmonic rotational anisotropy were used to confirm the growth of the cubic polytype, atomic force microscopy was used to support the identification of silicon carbide defects based on their distinct shape, while second harmonic generation microscopy revealed the detailed structure of the defects. Our results show that this fast and noninvasive investigation method can identify defects which appear during the crystal growth and can be used to certify areas within the silicon carbide epilayer that have optimal quality.

  15. Raman Amplifier Based on Amorphous Silicon Nanoparticles

    Directory of Open Access Journals (Sweden)

    M. A. Ferrara

    2012-01-01

    Full Text Available The observation of stimulated Raman scattering in amorphous silicon nanoparticles embedded in Si-rich nitride/silicon superlattice structures (SRN/Si-SLs is reported. Using a 1427 nm continuous-wavelength pump laser, an amplification of Stokes signal up to 0.9 dB/cm at 1540.6 nm and a significant reduction in threshold power of about 40% with respect to silicon are experimentally demonstrated. Our results indicate that amorphous silicon nanoparticles are a great promise for Si-based Raman lasers.

  16. Directional amorphization of boron carbide subjected to laser shock compression

    Science.gov (United States)

    Zhao, Shiteng; Kad, Bimal; Remington, Bruce A.; LaSalvia, Jerry C.; Wehrenberg, Christopher E.; Behler, Kristopher D.; Meyers, Marc A.

    2016-10-01

    Solid-state shock-wave propagation is strongly nonequilibrium in nature and hence rate dependent. Using high-power pulsed-laser-driven shock compression, unprecedented high strain rates can be achieved; here we report the directional amorphization in boron carbide polycrystals. At a shock pressure of 45˜50 GPa, multiple planar faults, slightly deviated from maximum shear direction, occur a few hundred nanometers below the shock surface. High-resolution transmission electron microscopy reveals that these planar faults are precursors of directional amorphization. It is proposed that the shear stresses cause the amorphization and that pressure assists the process by ensuring the integrity of the specimen. Thermal energy conversion calculations including heat transfer suggest that amorphization is a solid-state process. Such a phenomenon has significant effect on the ballistic performance of B4C.

  17. Effect of Heat Treatment on Silicon Carbide Based Joining Materials for Fusion Energy

    Energy Technology Data Exchange (ETDEWEB)

    Lewinsohn, Charles A.; Jones, Russell H.; Nozawa, T.; Kotani, M.; Kishimoto, H.; Katoh, Y.; Kohyama, A.

    2001-10-01

    Two general approaches to obtaining silicon carbide-based joint materials were used. The first method relies on reactions between silicon and carbon to form silicon carbide, or to bond silicon carbide powders together. The second method consists of pyrolysing a polycarbosilane polymer to yield an amorphous, covalently bonded material. In order to assess the long-term durability of the joint materials, various heat treatments were performed and the effects on the mechanical properties of the joints were measured. Although the joints derived from the polycarbosilane polymer were not the strongest, the value of strength measured was not affected by heat treatment. On the other hand, the value of the strength of the reaction-based joints was affected by heat treatment, indicating the presence of residual stresses or unreacted material subsequent to processing. Further investigation of reaction-based joining should consist of detailed microscopic studies; however, continued study of joints derived from polymers is also warranted.

  18. Field Emission of Thermally Grown Carbon Nanostructures on Silicon Carbide

    Science.gov (United States)

    2012-03-22

    thermal decomposition of silicon carbide does not utilize a catalyst, therefore relatively defect free. One drawback to this method, however is that the CNT...In this thesis, silicon carbide samples are patterned to create elevated emission sites in an attempt to minimize the field emission screening effect...Patterning is accomplished by using standard photolithography methods to implement a masking nickel layer on the silicon carbide . Pillars are created

  19. Silicon Carbide Corrugated Mirrors for Space Telescopes Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Trex Enterprises Corporation (Trex) proposes technology development to manufacture monolithic, lightweight silicon carbide corrugated mirrors (SCCM) suitable for...

  20. HEAT-RESISTANT MATERIAL WITH SILICON CARBIDE AS A BASE,

    Science.gov (United States)

    A new high-temperature material, termed SG-60, is a silicon carbide -graphite composite in which the graphite is the thermostability carrier since it...is more heat-conducting and softer (heat conductivity of graphite is 0.57 cal/g-cm-sec compared with 0.02 cal/g-cm-sec for silicon carbide ) while... silicon carbide is the carrier of high-temperature strength and hardness. The high covalent bonding strength of the atoms of silicon carbide (283 kcal

  1. Chemical Modification Methods of Nanoparticles of Silicon Carbide Surface

    Directory of Open Access Journals (Sweden)

    Anton S. Yegorov

    2015-09-01

    Full Text Available silicon carbide exhibits exceptional properties: high durability, high thermal conductivity, good heat resistance, low thermal expansion factor and chemical inactivity. Reinforcement with silicon carbide nanoparticles increases polymer’s tensile strength and thermal stability.Chemical methods of modification of the silicon carbide surface by means of variety of reagents from ordinary molecules to macromolecular polymers are reviewed in the review.The structure of silicon carbide surface layer and the nature of modificator bonding with the surface of SiC particles are reviewed. General examples of surface modification methodologies and composite materials with the addition of modified SiC are given.

  2. Indentation fatigue in silicon nitride, alumina and silicon carbide ceramics

    Indian Academy of Sciences (India)

    A K Mukhopadhyay

    2001-04-01

    Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker’s microhardness tester at various loads in the range 1–20 N. Subsequently, the gradual evolution of the damage was characterized using an optical microscope in conjunction with the image analysing technique. The materials were classified in the order of the decreasing resistance against repeated indentation fatigue at the highest applied load of 20 N. It was further shown that there was a strong influence of grain size on the development of resistance against repeated indentation fatigue on the same spot. Finally, the poor performance of the sintered silicon carbide was found out to be linked to its previous thermal history.

  3. Epitaxial and bulk growth of cubic silicon carbide on off-oriented 4H-silicon carbide substrates

    OpenAIRE

    Norén, Olof

    2015-01-01

    The growth of bulk cubic silicon carbide has for a long time seemed to be something for the future. However, in this thesis the initial steps towards bulk cubic silicon carbide have been taken. The achievement of producing bulk cubic silicon carbide will have a great impact in various fields of science and industry such as for example the fields of semiconductor technology within electronic- and optoelectronic devices and bio-medical applications. The process that has been used to grow the bu...

  4. Reaction Kinetics of Nanostructured Silicon Carbide

    Science.gov (United States)

    Wallis, Kendra; Zerda, T. W.

    2006-10-01

    Nanostructured silicon carbide (SiC) is of interest particularly for use in nanocomposites that demonstrate high hardness as well as for use in semiconductor applications. Reaction kinetics studies of solid-solid reactions are relatively recent and present a method of determining the reaction mechanism and activation energy by measuring reaction rates. We have used induction heating to heat quickly, thus reducing the error in reaction time measurements. Data will be presented for reactions using silicon nanopowder (melting point of silicon. Using the well-known Avrami-Erofeev model, a two-parameter chi- square fit of the data provided a rate constant (k) and parameter (n), related to the reaction mechanism, for each temperature. From these data, an activation energy of 138 kJ/mol was calculated. In addition, the parameter n suggests the reaction mechanism, which will also be discussed. Experiments are continuing at higher temperatures to consider the liquid- solid reaction as well.

  5. Shock-wave strength properties of boron carbide and silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Grady, D.E.

    1994-02-01

    Time-resolved velocity interferometry measurements have been made on boron carbide and silicon carbide ceramics to assess dynamic equation-of-state and strength properties of these materials. Hugoniot pecursor characteristics, and post-yield shock and release wave properties, indicated markedly different dynamic strength and flow behavior for the two carbides.

  6. Interface Defeat of Long Rods Impacting Oblique Silicon Carbide

    Science.gov (United States)

    2011-02-01

    Test data for gold rods impacting unconfined silicon carbide targets are reported. This work focuses on the dwell phenomenon exhibited by silicon ... carbide for targets at obliquity. Experiments are presented for obliquities of 30 deg, 45 deg and 60 deg, with and without cover plates. Results are compared to normal impact.

  7. Silicon Carbide Tiles for Sidewall Lining in Aluminium Electrolysis Cells

    Institute of Scientific and Technical Information of China (English)

    RUANBo; ZHAOJunguo; 等

    1999-01-01

    The paper introduces the nitride bonded silicon carbide used for sidewall lining in aluminium eletrolysis cells ,including technical process,main properties and application results.Comparison tests on various physical properties of silicon carbide products made by LIRR and other producers worldwide have also been conducted in an independent laboratory.

  8. Rapid cost-effective silicon carbide optical component manufacturing technique

    Science.gov (United States)

    Casstevens, John M.; Plummer, Ronald; Jarocki, Jim

    1999-10-01

    Silicon carbide may well be the best known material for the manufacture of high performance optical components. A combination of extremely high specific stiffness (r/E), high thermal conductivity and outstanding dimensional stability make silicon carbide superior overall to beryllium and low- expansion glass ceramics. A major impediment to wide use of silicon carbide in optical systems has been the costs of preliminary pressing, casting, shaping and final finishing of silicon carbide. Diamond grinding of silicon carbide is a slow and expensive process even on machines specially designed for the task. The process described here begins by machining the component from a special type of graphite. This graphite is easily machined with multi-axis CNC machine tools to any level of complexity and lightweighting required. The graphite is then converted completely to silicon carbide with very small and very predictable dimensional change. After conversion to silicon carbide the optical surface is coated with very fine grain silicon carbide which is easily polished to extreme smoothness using conventional optical polishing techniques. The fabrication process and a 6 inch diameter development mirror is described.

  9. Novel Polymer Nanocomposite With Silicon Carbide Nanoparticles

    Directory of Open Access Journals (Sweden)

    Alyona I. Wozniak

    2015-09-01

    Full Text Available Polyimides are ranked among the most heat-resistant polymers and are widely used in high temperature plastics, adhesives, dielectrics, photoresistors, nonlinear optical materials, membrane materials for gasseparation, and Langmuir–Blodgett (LB films, among others. While there is a variety of high temperature stable polyimides, there is a growing demand for utilizing these materials at higher temperatures in oxidizing and aggressive environments. Therefore, we sought to use oxidation-resistant materials to enhance properties of the polyimide composition maintaining polyimide weights and processing advantages. In this paper we introduced results of utilizing inorganic nanostructured silicon carbide particles to produce an inorganic particle filled polyimide materials.

  10. Mechanical characteristics of microwave sintered silicon carbide

    Indian Academy of Sciences (India)

    S Mandal; A Seal; S K Dalui; A K Dey; S Ghatak; A K Mukhopadhyay

    2001-04-01

    The present work deals with the sintering of SiC with a low melting additive by microwave technique. The mechanical characteristics of the products were compared with that of conventionally sintered products. The failure stress of the microwave sintered products, in biaxial flexure, was superior to that of the products made by conventional sintering route in ambient condition. In firing of products by conventionally sintered process, SiC grain gets oxidized producing SiO2 (∼ 32 wt%) and deteriorates the quality of the product substantially. Partially sintered silicon carbide by such a method is a useful material for a varieties of applications ranging from kiln furniture to membrane material.

  11. Silicon Carbide Nanotube Oxidation at High Temperatures

    Science.gov (United States)

    Ahlborg, Nadia; Zhu, Dongming

    2012-01-01

    Silicon Carbide Nanotubes (SiCNTs) have high mechanical strength and also have many potential functional applications. In this study, SiCNTs were investigated for use in strengthening high temperature silicate and oxide materials for high performance ceramic nanocomposites and environmental barrier coating bond coats. The high · temperature oxidation behavior of the nanotubes was of particular interest. The SiCNTs were synthesized by a direct reactive conversion process of multiwall carbon nanotubes and silicon at high temperature. Thermogravimetric analysis (TGA) was used to study the oxidation kinetics of SiCNTs at temperatures ranging from 800degC to1300degC. The specific oxidation mechanisms were also investigated.

  12. Converting a carbon preform object to a silicon carbide object

    Science.gov (United States)

    Levin, Harry (Inventor)

    1990-01-01

    A process for converting in depth a carbon or graphite preform object to a silicon carbide object, silicon carbide/silicon object, silicon carbide/carbon-core object, or a silicon carbide/silicon/carbon-core object, by contacting it with silicon liquid and vapor over various lengths of contact time in a reaction chamber. In the process, a stream comprised of a silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a coreactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into the reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. Thus, the precursor gas is decomposed directly to silicon in the reaction chamber. Any stream of decomposition gas and any unreacted precursor gas from the reaction chamber is removed. A carbon or graphite preform object placed in the reaction chamber is contacted with the silicon. The carbon or graphite preform object is recovered from the reactor chamber after it has been converted to a desired silicon carbide, silicon and carbon composition.

  13. Towards upconversion for amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    de Wild, J.; Rath, J.K.; Schropp, R.E.I. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics, P.O. Box 80000, 3508 TA Utrecht (Netherlands); Meijerink, A. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Condensed Matter and Interfaces, P.O. Box 80000, 3508 TA Utrecht (Netherlands); van Sark, W.G.J.H.M. [Utrecht University, Copernicus Institute for Sustainable Development and Innovation, Science, Technology and Society, Heidelberglaan 2, 3584 CS Utrecht (Netherlands)

    2010-11-15

    Upconversion of subbandgap light of thin film single junction amorphous silicon solar cells may enhance their performance in the near infrared (NIR). In this paper we report on the application of the NIR-vis upconverter {beta}-NaYF{sub 4}:Yb{sup 3+}(18%) Er{sup 3+}(2%) at the back of an amorphous silicon solar cell in combination with a white back reflector and its response to infrared irradiation. Current-voltage measurements and spectral response measurements were done on experimental solar cells. An enhancement of 10 {mu}A/cm{sup 2} was measured under illumination with a 980 nm diode laser (10 mW). A part of this was due to defect absorption in localized states of the amorphous silicon. (author)

  14. Oxide film assisted dopant diffusion in silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Tin, Chin-Che, E-mail: cctin@physics.auburn.ed [Department of Physics, Auburn University, Alabama 36849 (United States); Mendis, Suwan [Department of Physics, Auburn University, Alabama 36849 (United States); Chew, Kerlit [Department of Electrical and Electronic Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Kuala Lumpur (Malaysia); Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin [Physical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent (Uzbekistan); Atabaev, Bakhtiyar [Institute of Electronics, Uzbek Academy of Sciences, 700125 Tashkent (Uzbekistan); Adedeji, Victor [Department of Chemistry, Geology and Physics, Elizabeth City State University, North Carolina 27909 (United States); Rusli [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore)

    2010-10-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  15. Formation of iron disilicide on amorphous silicon

    Science.gov (United States)

    Erlesand, U.; Östling, M.; Bodén, K.

    1991-11-01

    Thin films of iron disilicide, β-FeSi 2 were formed on both amorphous silicon and on crystalline silicon. The β-phase is reported to be semiconducting with a direct band-gap of about 0.85-0.89 eV. This phase is known to form via a nucleation-controlled growth process on crystalline silicon and as a consequence a rather rough silicon/silicide interface is usually formed. In order to improve the interface a bilayer structure of amorphous silicon and iron was sequentially deposited on Czochralski silicon in an e-gun evaporation system. Secondary ion mass spectrometry profiling (SIMS) and scanning electron micrographs revealed an improvement of the interface sharpness. Rutherford backscattering spectrometry (RBS) and X-ray diffractiometry showed β-FeSi 2 formation already at 525°C. It was also observed that the silicide growth was diffusion-controlled, similar to what has been reported for example in the formation of NiSi 2 for the reaction of nickel on amorphous silicon. The kinetics of the FeSi 2 formation in the temperature range 525-625°C was studied by RBS and the activation energy was found to be 1.5 ± 0.1 eV.

  16. High precision optical finishing of lightweight silicon carbide aspheric mirror

    Science.gov (United States)

    Kong, John; Young, Kevin

    2010-10-01

    Critical to the deployment of large surveillance optics into the space environment is the generation of high quality optics. Traditionally, aluminum, glass and beryllium have been used; however, silicon carbide becomes of increasing interest and availability due to its high strength. With the hardness of silicon carbide being similar to diamond, traditional polishing methods suffer from slow material removal rates, difficulty in achieving the desired figure and inherent risk of causing catastrophic damage to the lightweight structure. Rather than increasing structural capacity and mass of the substrate, our proprietary sub-aperture aspheric surface forming technology offers higher material removal rates (comparable to that of Zerodur or Fused Silica), a deterministic approach to achieving the desired figure while minimizing contact area and the resulting load on the optical structure. The technology performed on computer-controlled machines with motion control software providing precise and quick convergence of surface figure, as demonstrated by optically finishing lightweight silicon carbide aspheres. At the same time, it also offers the advantage of ideal pitch finish of low surface micro-roughness and low mid-spatial frequency error. This method provides a solution applicable to all common silicon carbide substrate materials, including substrates with CVD silicon carbide cladding, offered by major silicon carbide material suppliers. This paper discusses a demonstration mirror we polished using this novel technology. The mirror is a lightweight silicon carbide substrate with CVD silicon carbide cladding. It is a convex hyperbolic secondary mirror with 104mm diameter and approximately 20 microns aspheric departure from best-fit sphere. The mirror has been finished with surface irregularity of better than 1/50 wave RMS @632.8 nm and surface micro-roughness of under 2 angstroms RMS. The technology has the potential to be scaled up for manufacturing capabilities of

  17. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    A R M Yusoff; M N Syahrul; K Henkel

    2007-08-01

    A major issue encountered during fabrication of triple junction -Si solar cells on polyimide substrates is the adhesion of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous silicon solar cells made on different polyimide substrates (Kapton VN, Upilex-S and Gouldflex), and the effect of tie coats on film adhesion.

  18. Noise and degradation of amorphous silicon devices

    NARCIS (Netherlands)

    Bakker, J.P.R.

    2003-01-01

    Electrical noise measurements are reported on two devices of the disordered semiconductor hydrogenated amorphous silicon (a-Si:H). The material is applied in sandwich structures and in thin-film transistors (TFTs). In a sandwich configuration of an intrinsic layer and two thin doped layers, the obse

  19. Amorphous silicon for thin-film transistors

    NARCIS (Netherlands)

    Schropp, Rudolf Emmanuel Isidore

    1987-01-01

    Hydrogenated amorphous silicon (a-Si:H) has considerable potential as a semiconducting material for large-area photoelectric and photovoltaic applications. Moreover, a-Si:H thin-film transistors (TFT’s) are very well suited as switching devices in addressable liquid crystal display panels and addres

  20. Predicting Two-Dimensional Silicon Carbide Monolayers.

    Science.gov (United States)

    Shi, Zhiming; Zhang, Zhuhua; Kutana, Alex; Yakobson, Boris I

    2015-10-27

    Intrinsic semimetallicity of graphene and silicene largely limits their applications in functional devices. Mixing carbon and silicon atoms to form two-dimensional (2D) silicon carbide (SixC1-x) sheets is promising to overcome this issue. Using first-principles calculations combined with the cluster expansion method, we perform a comprehensive study on the thermodynamic stability and electronic properties of 2D SixC1-x monolayers with 0 ≤ x ≤ 1. Upon varying the silicon concentration, the 2D SixC1-x presents two distinct structural phases, a homogeneous phase with well dispersed Si (or C) atoms and an in-plane hybrid phase rich in SiC domains. While the in-plane hybrid structure shows uniform semiconducting properties with widely tunable band gap from 0 to 2.87 eV due to quantum confinement effect imposed by the SiC domains, the homogeneous structures can be semiconducting or remain semimetallic depending on a superlattice vector which dictates whether the sublattice symmetry is topologically broken. Moreover, we reveal a universal rule for describing the electronic properties of the homogeneous SixC1-x structures. These findings suggest that the 2D SixC1-x monolayers may present a new "family" of 2D materials, with a rich variety of properties for applications in electronics and optoelectronics.

  1. Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

    Science.gov (United States)

    Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

    2016-12-28

    The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiCx(p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiCx(p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiCx(p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm(-2) on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a Voc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p(+)/p-wafer full-side-passivated rear-side scheme shown here.

  2. Development of a silicon carbide sewing thread

    Science.gov (United States)

    Sawko, Paul M.; Vasudev, Anand

    1989-01-01

    A silicon carbide (SiC) sewing thread has been designed which consists of a two-ply yarn in a 122 turns-per-meter-twist construction. Two processing aids in thread construction were evaluated. Prototype blankets were sewn using an SiC thread prepared either with polytetrafluoroethylene sizing or with an overwrap of rayon/dacron service yarn. The rayon/dacron-wrapped SiC thread was stronger, as shown by higher break-strength retention and less damage to the outer-mold-line fabric. This thread enables thermal protection system articles to be sewn or joined, or have perimeter close-out of assembled parts when using SiC fabric for high-temperature applications.

  3. Stable field emission from nanoporous silicon carbide.

    Science.gov (United States)

    Kang, Myung-Gyu; Lezec, Henri J; Sharifi, Fred

    2013-02-15

    We report on a new type of stable field emitter capable of electron emission at levels comparable to thermal sources. Such an emitter potentially enables significant advances in several important technologies which currently use thermal electron sources. These include communications through microwave electronics, and more notably imaging for medicine and security where new modalities of detection may arise due to variable-geometry x-ray sources. Stable emission of 6 A cm(-2) is demonstrated in a macroscopic array, and lifetime measurements indicate these new emitters are sufficiently robust to be considered for realistic implementation. The emitter is a monolithic structure, and is made in a room-temperature process. It is fabricated from a silicon carbide wafer, which is formed into a highly porous structure resembling an aerogel, and further patterned into an array. The emission properties may be tuned both through control of the nanoscale morphology and the macroscopic shape of the emitter array.

  4. Preparation of Silicon Carbide with High Properties

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    In order to prepare silicon carbide with high properties, three kinds of SiC powders A, B, and C with different composition and two kinds of additives, which were Y2O3-Al2O3 system and Y2O3-La2O3 system, were used in this experiment. The properties of hot-pressed SiC ceramics were measured. With the same additives, different SiC powder resulted in different properties. On the other hand, with the same SiC powder, increasing the amount of the additive Y2O3-Al2O3 improved properties of SiC ceramics at room temperature, and increasing the amount of the additive Y2O3-La2O3 improved property SiC ceramics at elevated temperature. In addition, the microstructure of SiC ceramics was studied by scanning electron microscopy.

  5. Thermal Oxidation of Silicon Carbide Substrates

    Institute of Scientific and Technical Information of China (English)

    Xiufang Chen; Li'na Ning; Yingmin Wang; Juan Li; Xiangang Xu; Xiaobo Hu; Minhua Jiang

    2009-01-01

    Thermal oxidation was used to remove the subsurface damage of silicon carbide (SiC) surfaces. The anisotrow of oxidation and the composition of oxide layers on Si and C faces were analyzed. Regular pits were observed on the surface after the removal of the oxide layers, which were detrimental to the growth of high quality epitaxial layers. The thickness and composition of the oxide layers were characterized by Rutherford backscat-tering spectrometry (RBS) and X-ray photoelectron spectroscopy (XPS), respectively. Epitaxial growth was performed in a metal organic chemical vapor deposition (MOCVD) system. The substrate surface morphol-ogy after removing the oxide layer and gallium nitride (GaN) epilayer surface were observed by atomic force microscopy (AFM). The results showed that the GaN epilayer grown on the oxidized substrates was superior to that on the unoxidized substrates.

  6. Stored energy in irradiated silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Snead, L.L.; Burchell, T.D. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    This report presents a short review of the phenomenon of Wigner stored energy release from irradiated graphite and discusses it in relation to neutron irradiation of silicon carbide. A single published work in the area of stored energy release in SiC is reviewed and the results are discussed. It appears from this previous work that because the combination of the comparatively high specific heat of SiC and distribution in activation energies for recombining defects, the stored energy release of SiC should only be a problem at temperatures lower than those considered for fusion devices. The conclusion of this preliminary review is that the stored energy release in SiC will not be sufficient to cause catastrophic heating in fusion reactor components, though further study would be desirable.

  7. A review of oxide, silicon nitride, and silicon carbide brazing

    Energy Technology Data Exchange (ETDEWEB)

    Santella, M.L.; Moorhead, A.J.

    1987-01-01

    There is growing interest in using ceramics for structural applications, many of which require the fabrication of components with complicated shapes. Normal ceramic processing methods restrict the shapes into which these materials can be produced, but ceramic joining technology can be used to overcome many of these limitations, and also offers the possibility for improving the reliability of ceramic components. One method of joining ceramics is by brazing. The metallic alloys used for bonding must wet and adhere to the ceramic surfaces without excessive reaction. Alumina, partially stabilized zirconia, and silicon nitride have high ionic character to their chemical bonds and are difficult to wet. Alloys for brazing these materials must be formulated to overcome this problem. Silicon carbide, which has some metallic characteristics, reacts excessively with many alloys, and forms joints of low mechanical strength. The brazing characteristics of these three types of ceramics, and residual stresses in ceramic-to-metal joints are briefly discussed.

  8. Silicon Carbide Threads For High-Temperature Service

    Science.gov (United States)

    Sawko, Paul M.; Vasudev, Anand

    1991-01-01

    New thread material outperforms silica. Sewing threads containing silicon carbide (SiC) yarn withstand temperatures of more than 1,100 degrees C. Intended for use in stitching thermally insulating blankets.

  9. Silicon carbide materials for high duty seal applications

    Energy Technology Data Exchange (ETDEWEB)

    Berroth, K.E. (Schunk Ingenieurkeramik GmbH, Duesseldorf (Germany, F.R.))

    1990-12-01

    Properties, fabrication, and high-duty applications of silicon carbide grades are discussed. The two types of silicon carbide, i.e., reaction-bonded and sintered, are considered. The potential for adhesion and the lack of dry running abilities lead to a variety of microstructures. For reaction-bonded silicon carbide, the microstructure can be a tool for optimization of the tribological behavior. Besides the high corrosion resistance of the material, its thermal conductivity is excellent. Grain sizes of about 40-50 microns are used in high-duty applications. Reaction-bonded silicon carbide with residual content of carbon graphite has improved tribological/hydrodynamic characteristics and performs well in sealing hard faces.

  10. Ion implantation phenomena in 4H-silicon carbide

    CERN Document Server

    Phelps, Gordon James

    2003-01-01

    Silicon Carbide is a promising wide band gap semiconductor with many new properties yet to be established and investigated. Ion implantation is the dominant method of incorporating dopant materials into the Silicon Carbide crystalline structure for electronic device fabrication. The implantation process of dopants into Silicon Carbide, both theoretical and practical, is described in this Thesis. Additional fabrication process steps, such as annealing, and their implications are also described. To gain further insight into the process of ion implantation into Silicon Carbide, the detailed design of a special test die is discussed. The aim of the special test die was to obtain general information such as implanted dopant sheet resistivity and to test a novel bipolar transistor design. The fabrication steps involved for the special test die are discussed in detail. The results from the special test die take the form of specific electrical measurements, together with detailed visual observations provided by a sca...

  11. Process for preparing fine grain silicon carbide powder

    Science.gov (United States)

    Wei, G.C.

    Method of producing fine-grain silicon carbide powder comprises combining methyltrimethoxysilane with a solution of phenolic resin, acetone and water or sugar and water, gelling the resulting mixture, and then drying and heating the obtained gel.

  12. ADHERENCE AND PROPERTIES OF SILICON CARBIDE BASED FILMS ON STEEL

    OpenAIRE

    Lelogeais, M.; Ducarroir, M.; Berjoan, R.

    1991-01-01

    Coatings of silicon carbide with various compositions have been obtained in a r.f plasma assisted process using tetramethylsilane and argon as input gases. Some properties against mechanical applications of such deposits on steel have been investigated. Residual stresses and hardness are reported and discussed in relation with plasma parameters and deposit composition. By scratch testing, it was shown that the silicon carbide films on steel denote a good adherence when compared with previous ...

  13. Single-Event Effects in Silicon Carbide Power Devices

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Ikpe, Stanley; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2015-01-01

    This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.

  14. Implanted Bottom Gate for Epitaxial Graphene on Silicon Carbide

    OpenAIRE

    Waldmann, Daniel; Jobst, Johannes; Fromm, Felix; Speck, Florian; Seyller, Thomas; Krieger, Michael; Weber, Heiko B.

    2011-01-01

    We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which graphene remains accessible for further manipulation or investigation. Via nitrogen or phosphor implantation into a silicon carbide wafer and subsequent graphene growth, devices can routinely be fabricated using standard semiconductor technology. We have optimized samples for room temperature as well as for cryogenic...

  15. Single-Event Effects in Silicon and Silicon Carbide Power Devices

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2014-01-01

    NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

  16. Thermal properties of wood-derived silicon carbide and copper-silicon carbide composites

    Science.gov (United States)

    Pappecena, Kristen E.

    Wood-derived ceramics and composites have been of interest in recent years due to their unique microstructures, which lead to tailorable properties. The porosity and pore size distribution of each wood type is different, which yields variations in properties in the resultant materials. The thermal properties of silicon carbide ceramics and copper-silicon carbide composites derived from wood were studied as a function of their pore structures. Wood was pyrolyzed at temperatures ranging from 300-2400°C to yield porous carbon. The progression toward long-range order was studied as a function of pyrolyzation temperature. Biomorphic silicon carbide (bioSiC) is a porous ceramic material resulting from silicon melt infiltration of these porous carbon materials. BioSiC has potential applicability in many high temperature environments, particularly those in which rapid temperature changes occur. To understand the behavior of bioSiC at elevated temperatures, the thermal and thermo-mechanical properties were studied. The thermal conductivity of bioSiC from five precursors was determined using flash diffusivity at temperatures up to 1100°C. Thermal conductivity results varied with porosity, temperature and orientation, and decreased from 42-13 W/mK for porosities of 43-69%, respectively, at room temperature. The results were compared with to object-oriented finite-element analysis (OOF). OOF was also used to model and understand the heat-flow paths through the complex bioSiC microstructures. The thermal shock resistance of bioSiC was also studied, and no bioSiC sample was found to fail catastrophically after up to five thermal shock cycles from 1400°C to room temperature oil. Copper-silicon carbide composites have potential uses in thermal management applications due to the high thermal conductivity of each phase. Cu-bioSiC composites were created by electrodeposition of copper into bioSiC pores. The detrimental Cu-SiC reaction was avoided by using this room temperature

  17. The effect of substrate bias on titanium carbide/amorphous carbon nanocomposite films deposited by filtered cathodic vacuum arc

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xu, E-mail: zhangxu@bnu.edu.cn [Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University (China); Liang, Hong [Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University (China); Wu, Zhenglong [Analytical and Testing Center, Beijing Normal University (China); Wu, Xiangying; Zhang, Huixing [Key Laboratory of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University (China)

    2013-07-15

    The titanium carbide/amorphous carbon nanocomposite films have been deposited on silicon substrate by filtered cathodic vacuum arc (FCVA) technology, the effects of substrate bias on composition, structures and mechanical properties of the films are studied by scanning electron spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy and nano-indentation. The results show that the Ti content, deposition rate and hardness at first increase and then decrease with increasing the substrate bias. Maximum hardness of the titanium carbide/amorphous carbon nanocomposite film is 51 Gpa prepared at −400 V. The hardness enhancement may be attributed to the compressive stress and the fraction of crystalline TiC phase due to ion bombardment.

  18. Synthesis of silicon carbide nanowires by solid phase source chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    NI Jie; LI Zhengcao; ZHANG Zhengjun

    2007-01-01

    In this paper,we report a simple approach to synthesize silicon carbide(SiC)nanowires by solid phase source chemical vapor deposition(CVD) at relatively low temperatures.3C-SiC nanowires covered by an amorphous shell were obtained on a thin film which was first deposited on silicon substrates,and the nanowires are 20-80 am in diameter and several μm in length,with a growth direction of[200].The growth of the nanowires agrees well on vapor-liquid-solid (VLS)process and the film deposited on the substrates plays an important role in the formation of nanowires.

  19. Process for coating an object with silicon carbide

    Science.gov (United States)

    Levin, Harry (Inventor)

    1989-01-01

    A process for coating a carbon or graphite object with silicon carbide by contacting it with silicon liquid and vapor over various lengths of contact time. In the process, a stream of silicon-containing precursor material in gaseous phase below the decomposition temperature of said gas and a co-reactant, carrier or diluent gas such as hydrogen is passed through a hole within a high emissivity, thin, insulating septum into a reaction chamber above the melting point of silicon. The thin septum has one face below the decomposition temperature of the gas and an opposite face exposed to the reaction chamber. The precursor gas is decomposed directly to silicon in the reaction chamber. A stream of any decomposition gas and any unreacted precursor gas from said reaction chamber is removed. The object within the reaction chamber is then contacted with silicon, and recovered after it has been coated with silicon carbide.

  20. Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

    Directory of Open Access Journals (Sweden)

    Wan Zhenyu

    2011-01-01

    Full Text Available Abstract In this paper, a positive effect of rapid thermal annealing (RTA technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%. Si nanocrystals (Si-NC containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions: furnace annealing and RTA both at 1,100°C. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

  1. Highly permeable and mechanically robust silicon carbide hollow fiber membranes

    NARCIS (Netherlands)

    Wit, de P.; Kappert, Emiel J.; Lohaus, T.; Wessling, M.; Nijmeijer, A.; Benes, N.E.

    2015-01-01

    Silicon carbide (SiC) membranes have shown large potential for applications in water treatment. Being able to make these membranes in a hollow fiber geometry allows for higher surface-to-volume ratios. In this study, we present a thermal treatment procedure that is tuned to produce porous silicon ca

  2. Nickel-induced crystallization of amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, J A; Arce, R D; Buitrago, R H [INTEC (CONICET-UNL), Gueemes 3450, S3000GLN Santa Fe (Argentina); Budini, N; Rinaldi, P, E-mail: jschmidt@intec.unl.edu.a [FIQ - UNL, Santiago del Estero 2829, S3000AOM Santa Fe (Argentina)

    2009-05-01

    The nickel-induced crystallization of hydrogenated amorphous silicon (a-Si:H) is used to obtain large grained polycrystalline silicon thin films on glass substrates. a-Si:H is deposited by plasma enhanced chemical vapour deposition at 200 deg. C, preparing intrinsic and slightly p-doped samples. Each sample was divided in several pieces, over which increasing Ni concentrations were sputtered. Two crystallization methods are compared, conventional furnace annealing (CFA) and rapid thermal annealing (RTA). The crystallization was followed by optical microscopy and scanning electron microscopy observations, X-ray diffraction, and reflectance measurements in the UV region. The large grain sizes obtained - larger than 100{mu}m for the samples crystallized by CFA - are very encouraging for the preparation of low-cost thin film polycrystalline silicon solar cells.

  3. Methods for producing silicon carbide architectural preforms

    Science.gov (United States)

    DiCarlo, James A. (Inventor); Yun, Hee (Inventor)

    2010-01-01

    Methods are disclosed for producing architectural preforms and high-temperature composite structures containing high-strength ceramic fibers with reduced preforming stresses within each fiber, with an in-situ grown coating on each fiber surface, with reduced boron within the bulk of each fiber, and with improved tensile creep and rupture resistance properties for each fiber. The methods include the steps of preparing an original sample of a preform formed from a pre-selected high-strength silicon carbide ceramic fiber type, placing the original sample in a processing furnace under a pre-selected preforming stress state and thermally treating the sample in the processing furnace at a pre-selected processing temperature and hold time in a processing gas having a pre-selected composition, pressure, and flow rate. For the high-temperature composite structures, the method includes additional steps of depositing a thin interphase coating on the surface of each fiber and forming a ceramic or carbon-based matrix within the sample.

  4. Casimir forces from conductive silicon carbide surfaces

    Science.gov (United States)

    Sedighi, M.; Svetovoy, V. B.; Broer, W. H.; Palasantzas, G.

    2014-05-01

    Samples of conductive silicon carbide (SiC), which is a promising material due to its excellent properties for devices operating in severe environments, were characterized with the atomic force microscope for roughness, and the optical properties were measured with ellipsometry in a wide range of frequencies. The samples show significant far-infrared absorption due to concentration of charge carriers and a sharp surface phonon-polariton peak. The Casimir interaction of SiC with different materials is calculated and discussed. As a result of the infrared structure and beyond to low frequencies, the Casimir force for SiC-SiC and SiC-Au approaches very slowly the limit of ideal metals, while it saturates significantly below this limit if interaction with insulators takes place (SiC-SiO2). At short separations (<10 nm) analysis of the van der Waals force yielded Hamaker constants for SiC-SiC interactions lower but comparable to those of metals, which is of significance to adhesion and surface assembly processes. Finally, bifurcation analysis of microelectromechanical system actuation indicated that SiC can enhance the regime of stable equilibria against stiction.

  5. Casimir force measurements from silicon carbide surfaces

    Science.gov (United States)

    Sedighi, M.; Svetovoy, V. B.; Palasantzas, G.

    2016-02-01

    Using an atomic force microscope we performed measurements of the Casimir force between a gold- coated (Au) microsphere and doped silicon carbide (SiC) samples. The last of these is a promising material for devices operating under severe environments. The roughness of the interacting surfaces was measured to obtain information for the minimum separation distance upon contact. Ellipsometry data for both systems were used to extract optical properties needed for the calculation of the Casimir force via the Lifshitz theory and for comparison to the experiment. Special attention is devoted to the separation of the electrostatic contribution to the measured total force. Our measurements demonstrate large contact potential V0(≈0.67 V ) , and a relatively small density of charges trapped in SiC. Knowledge of both Casimir and electrostatic forces between interacting materials is not only important from the fundamental point of view, but also for device applications involving actuating components at separations of less than 200 nm where surface forces play dominant role.

  6. Amorphous molybdenum silicon superconducting thin films

    Directory of Open Access Journals (Sweden)

    D. Bosworth

    2015-08-01

    Full Text Available Amorphous superconductors have become attractive candidate materials for superconducting nanowire single-photon detectors due to their ease of growth, homogeneity and competitive superconducting properties. To date the majority of devices have been fabricated using WxSi1−x, though other amorphous superconductors such as molybdenum silicide (MoxSi1−x offer increased transition temperature. This study focuses on the properties of MoSi thin films grown by magnetron sputtering. We examine how the composition and growth conditions affect film properties. For 100 nm film thickness, we report that the superconducting transition temperature (Tc reaches a maximum of 7.6 K at a composition of Mo83Si17. The transition temperature and amorphous character can be improved by cooling of the substrate during growth which inhibits formation of a crystalline phase. X-ray diffraction and transmission electron microscopy studies confirm the absence of long range order. We observe that for a range of 6 common substrates (silicon, thermally oxidized silicon, R- and C-plane sapphire, x-plane lithium niobate and quartz, there is no variation in superconducting transition temperature, making MoSi an excellent candidate material for SNSPDs.

  7. Enhanced Sintering of Boron Carbide-Silicon Composites by Silicon

    Science.gov (United States)

    Zeng, Xiaojun; Liu, Weiliang

    2016-11-01

    Boron carbide (B4C)-silicon (Si) composites have been prepared by aqueous tape casting, laminating, and spark plasma sintering (SPS). The influences of silicon (Si) content on the phases, microstructure, sintering properties, and mechanical properties of the obtained B4C-Si composites are studied. The results indicate that the addition of Si powder can act as a sintering aid and contribute to the sintering densification. The addition of Si powder can also act as a second phase and contribute to the toughening for composites. The relative density of B4C-Si composites samples with adding 10 wt.% Si powder prepared by SPS at 1600 °C and 50 MPa for 8 min is up to 98.3%. The bending strength, fracture toughness, and Vickers hardness of the sintered samples are 518.5 MPa, 5.87 MPa m1/2, and 38.9 GPa, respectively. The testing temperature-dependent high-temperature bending strength and fracture toughness can reach a maximum value at 1350 °C. The B4C-Si composites prepared at 1600, 1650, and 1700 °C have good high-temperature mechanical properties. This paper provides a facile low-temperature sintering route for B4C ceramics with improved properties.

  8. Enhanced Sintering of Boron Carbide-Silicon Composites by Silicon

    Science.gov (United States)

    Zeng, Xiaojun; Liu, Weiliang

    2016-09-01

    Boron carbide (B4C)-silicon (Si) composites have been prepared by aqueous tape casting, laminating, and spark plasma sintering (SPS). The influences of silicon (Si) content on the phases, microstructure, sintering properties, and mechanical properties of the obtained B4C-Si composites are studied. The results indicate that the addition of Si powder can act as a sintering aid and contribute to the sintering densification. The addition of Si powder can also act as a second phase and contribute to the toughening for composites. The relative density of B4C-Si composites samples with adding 10 wt.% Si powder prepared by SPS at 1600 °C and 50 MPa for 8 min is up to 98.3%. The bending strength, fracture toughness, and Vickers hardness of the sintered samples are 518.5 MPa, 5.87 MPa m1/2, and 38.9 GPa, respectively. The testing temperature-dependent high-temperature bending strength and fracture toughness can reach a maximum value at 1350 °C. The B4C-Si composites prepared at 1600, 1650, and 1700 °C have good high-temperature mechanical properties. This paper provides a facile low-temperature sintering route for B4C ceramics with improved properties.

  9. Core-shell amorphous silicon-carbon nanoparticles for high performance anodes in lithium ion batteries

    Science.gov (United States)

    Sourice, Julien; Bordes, Arnaud; Boulineau, Adrien; Alper, John P.; Franger, Sylvain; Quinsac, Axelle; Habert, Aurélie; Leconte, Yann; De Vito, Eric; Porcher, Willy; Reynaud, Cécile; Herlin-Boime, Nathalie; Haon, Cédric

    2016-10-01

    Core-shell silicon-carbon nanoparticles are attractive candidates as active material to increase the capacity of Li-ion batteries while mitigating the detrimental effects of volume expansion upon lithiation. However crystalline silicon suffers from amorphization upon the first charge/discharge cycle and improved stability is expected in starting with amorphous silicon. Here we report the synthesis, in a single-step process, of amorphous silicon nanoparticles coated with a carbon shell (a-Si@C), via a two-stage laser pyrolysis where decomposition of silane and ethylene are conducted in two successive reaction zones. Control of experimental conditions mitigates silicon core crystallization as well as formation of silicon carbide. Auger electron spectroscopy and scanning transmission electron microscopy show a carbon shell about 1 nm in thickness, which prevents detrimental oxidation of the a-Si cores. Cyclic voltammetry demonstrates that the core-shell composite reaches its maximal lithiation during the first sweep, thanks to its amorphous core. After 500 charge/discharge cycles, it retains a capacity of 1250 mAh.g-1 at a C/5 rate and 800 mAh.g-1 at 2C, with an outstanding coulombic efficiency of 99.95%. Moreover, post-mortem observations show an electrode volume expansion of less than 20% and preservation of the nanostructuration.

  10. Three-Terminal Amorphous Silicon Solar Cells

    OpenAIRE

    Cheng-Hung Tai; Chu-Hsuan Lin; Chih-Ming Wang; Chun-Chieh Lin

    2011-01-01

    Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si...

  11. Palladium in cubic silicon carbide: Stability and kinetics

    Science.gov (United States)

    Roma, Guido

    2009-12-01

    Several technological applications of silicon carbide are concerned with the introduction of palladium impurities. Be it intentional or not, this may lead to the formation of silicides. Not only this process is not well understood, but the basic properties of palladium impurities in silicon carbide, such as solubility or diffusion mechanisms, are far from being known. Here the stability and kinetics of isolated Pd impurities in cubic silicon carbide are studied by first principles calculations in the framework of density functional theory. The preferential insertion sites, as well as the main migration mechanisms, are analyzed and presented here, together with the results for solution and migration energies. The early stages of nucleation are discussed based on the properties of isolated impurities and the smallest clusters.

  12. Optimum Design of Lightweight Silicon Carbide Mirror Assembly

    Institute of Scientific and Technical Information of China (English)

    HAN Yuanyuan; ZHANG Yumin; HAN Jiecai; ZHANG Jianhan; YAO Wang; ZHOU Yufeng

    2008-01-01

    According to the design requirement and on the basis of the principle that the thermal expansion coefficient of the support structure should match with that of the mirror, a lightweight silicon carbide primary mirror assembly was designed. Finite element analysis combined with the parameter-optimized method was used during the design. Lightweight cell and rigid rib structure were used for the mirror assembly. The static, dynamic and thermal properties of the primary mirror assembly were analyzed. It is shown that after optimization, the lightweight ratio of the silicon carbide mirror is 52.5%, and the rigidity of the silicon carbide structure is high enough to support the required mirror. When temperature changes, the deformation of the mirror surface is in proportion to the temperature difference.

  13. Implanted bottom gate for epitaxial graphene on silicon carbide

    Science.gov (United States)

    Waldmann, D.; Jobst, J.; Fromm, F.; Speck, F.; Seyller, T.; Krieger, M.; Weber, H. B.

    2012-04-01

    We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which graphene remains accessible for further manipulation or investigation. Via nitrogen or phosphor implantation into a silicon carbide wafer and subsequent graphene growth, devices can routinely be fabricated using standard semiconductor technology. We have optimized samples for room temperature as well as for cryogenic temperature operation. Depending on implantation dose and temperature we operate in two gating regimes. In the first, the gating mechanism is similar to a MOSFET, the second is based on a tuned space charge region of the silicon carbide semiconductor. We present a detailed model that describes the two gating regimes and the transition in between.

  14. Characterization of silicon carbide coatings on Zircaloy-4 substrates

    Science.gov (United States)

    Al-Olayyan, Yousif Abdullah

    The lifetime of light water reactor (LWR) fuels is limited by the corrosion and degradation of Zircaloy cladding in the high temperature and high pressure operating conditions. As the thickness of the oxide layer increases, stresses build up in the oxide layer due to density differences between the oxide and the zirconium metal which lead to degradation and spallation of the oxide layer. The main objective of this research is to form protective coatings on the Zircaloy clad to prevent or at least slow the oxidation which can allow higher burnup of the fuel resulting in major benefits in plant safety and economics. Silicon carbide was identified as a candidate protective coating to reduce the corrosion and degradation of Zircaloy cladding. Silicon carbide coatings were deposited on Zircaloy substrates using plasma-assisted chemical vapor deposition (PE-CVD) and were found to be amorphous as determined by X-ray analysis. Since the adhesion of the films to the substrate was the most important property of a coating, scratch tests were used to assess the adhesion. The effects of different parameters on the test results including residual stresses, plastic deformation and friction between the stylus and the surface are discussed. Critical loads, characterized by continuous delamination of the SiC coatings deposited on Zircaloy-4, occurred at 0.5--2.5 N. The experimental results indicated that all SiC coatings used in this project, without exception, showed an adhesive failure when tested by scratch and indentation tests. Plastic deformation of the substrate due to compressive stresses induced by the scratch stylus caused flaking of the films at the interface, which was attributed to the low interfacial toughness. The effects of film thickness and substrate surface treatment on the quality and adhesion of SiC coatings were studied in detail. Thick films (5mum) exhibited extensive cracking. The scratch tests indicated higher adhesion with intermediate substrate surface

  15. Role of silicon dangling bonds in the electronic properties of epitaxial graphene on silicon carbide.

    Science.gov (United States)

    Ridene, Mohamed; Kha, Calvin S; Flipse, Cees F J

    2016-03-29

    In this paper, we study the electronic properties of epitaxial graphene (EG) on silicon carbide by means of ab initio calculations based on the local spin density approximation + U method taking into account the Coulomb interaction between Si localized electrons. We show that this interaction is not completely suppressed but is screened by carbon layers grown on-top of silicon carbide. This finding leads to a good qualitative understanding of the experimental results reported on EG on silicon carbide. Our results highlight the presence of the Si localized states and might explain the anomalous Hanle curve and the high values of spin relaxation time in EG.

  16. Ultrathin fiber poly-3-hydroxybutyrate, modified by silicon carbide nanoparticles

    Science.gov (United States)

    Olkhov, A. A.; Krutikova, A. A.; Goldshtrakh, M. A.; Staroverova, O. V.; Iordanskii, A. L.; Ischenko, A. A.

    2016-11-01

    The article presents the results of studies the composite fibrous material based on poly-3-hydroxybutyrate (PHB) and nano-size silicon carbide obtained by the electrospinning method. Size distribution of the silicon carbide nanoparticles in the fiber was estimated by X-ray diffraction technique. It is shown that immobilization of the SiC nanoparticles to the PHB fibers contributes to obtaining essentially smaller diameter of fibers, high physical-mechanical characteristics and increasing resistance to degradation in comparison with the fibers of PHB.

  17. Phase Field Theory and Analysis of Pressure-Shear Induced Amorphization and Failure in Boron Carbide Ceramic

    Science.gov (United States)

    2014-08-01

    Phase Field Theory and Analysis of Pressure-Shear Induced Amorphization and Failure in Boron Carbide Ceramic by John D Clayton ARL-RP...Pressure-Shear Induced Amorphization and Failure in Boron Carbide Ceramic John D Clayton Weapons and Materials Research Directorate, ARL...and Analysis of Pressure-Shear Induced Amorphization and Failure in Boron Carbide Ceramic 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM

  18. The Active Oxidation of Silicon Carbide

    Science.gov (United States)

    Jacobson, Nathan S.; Myers, Dwight L.

    2009-01-01

    The high temperature oxidation of silicon carbide occurs in two very different modes. Passive oxidation forms a protective oxide film which limits further attack of the SiC: SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g) Active oxidation forms a volatile oxide and may lead to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g) Generally passive oxidation occurs at higher oxidant pressures and active oxidation occurs at lower oxidant pressures and elevated temperatures. Active oxidation is a concern for reentry, where the flight trajectory involves the latter conditions. Thus the transition points and rates of active oxidation are a major concern. Passive/active transitions have been studied by a number of investigators. An examination of the literature indicates many questions remain regarding the effect of impurity, the hysteresis of the transition (i.e. the difference between active-to-passive and passive-toactive), and the effect of total pressure. In this study we systematically investigate each of these effects. Experiments were done in both an alumina furnace tube and a quartz furnace tube. It is known that alumina tubes release impurities such as sodium and increase the kinetics in the passive region [1]. We have observed that the active-to-passive transition occurs at a lower oxygen pressure when the experiment is conducted in alumina tubes and the resultant passive silica scale contains sodium. Thus the tests in this study are conducted in quartz tubes. The hysteresis of the transition has been discussed in the detail in the original theoretical treatise of this problem for pure silicon by Wagner [2], yet there is little mention of it in subsequent literature. Essentially Wagner points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. A series of experiments were conducted for active-to-passive and passive

  19. Sputtering and codeposition of silicon carbide with deuterium

    Science.gov (United States)

    Causey, Rion A.

    2003-03-01

    Due to its excellent thermal properties, silicon carbide is being considered as a possible plasma-facing material for fusion devices. If used as a plasma-facing material, the energetic hydrogen isotope ions and charge-exchanged neutrals escaping from the plasma will sputter the silicon carbide. To assess the tritium inventory problems that will be generated by the use of this material, it is necessary that we know the codeposition properties of the redeposited silicon carbide. To determine the codeposition properties, the deuterium plasma experiment at Sandia National Laboratories in Livermore, California has been used to directly compare the deuterium sputtering and codeposition of silicon carbide with that of graphite. A Penning discharge at a flux of 6×10 19 D/m 2 and an energy of ≈300 eV was used to sputter silicon and carbon from a pair of 0.05 m diameter silicon carbide disks. The removal rate of deuterium gas from the fixed volume of the system isolated from all other sources and sinks was used to measure the codeposition probability (probability that a hydrogen isotope atom will be removed through codeposition per ion striking the sample surface). A small catcher plate used to capture a fraction of the codeposited film was analyzed using Auger spectroscopy. This analysis showed the film to begin with a high carbon to silicon ratio due to preferential sputtering of the carbon. As the film became thicker, the ratio of the depositing material changed over to the (1:1) value that must eventually be attained.

  20. Scalable Quantum Photonics with Single Color Centers in Silicon Carbide.

    Science.gov (United States)

    Radulaski, Marina; Widmann, Matthias; Niethammer, Matthias; Zhang, Jingyuan Linda; Lee, Sang-Yun; Rendler, Torsten; Lagoudakis, Konstantinos G; Son, Nguyen Tien; Janzén, Erik; Ohshima, Takeshi; Wrachtrup, Jörg; Vučković, Jelena

    2017-02-24

    Silicon carbide is a promising platform for single photon sources, quantum bits (qubits), and nanoscale sensors based on individual color centers. Toward this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1400 nm diameters. We obtain high collection efficiency of up to 22 kcounts/s optical saturation rates from a single silicon vacancy center while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.

  1. Laser-induced phase separation of silicon carbide

    Science.gov (United States)

    Choi, Insung; Jeong, Hu Young; Shin, Hyeyoung; Kang, Gyeongwon; Byun, Myunghwan; Kim, Hyungjun; Chitu, Adrian M.; Im, James S.; Ruoff, Rodney S.; Choi, Sung-Yool; Lee, Keon Jae

    2016-11-01

    Understanding the phase separation mechanism of solid-state binary compounds induced by laser-material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiation triggers melting of the silicon carbide surface, resulting in a phase separation into a disordered carbon layer with partially graphitic domains (~2.5 nm) and polycrystalline silicon (~5 nm). Additional pulse irradiations cause sublimation of only the separated silicon element and subsequent transformation of the disordered carbon layer into multilayer graphene. The results demonstrate viability of synthesizing ultra-thin nanomaterials by the decomposition of a binary system.

  2. Photonic Crystal Cavities in Cubic Polytype Silicon Carbide Films

    CERN Document Server

    Radulaski, Marina; Buckley, Sonia; Rundquist, Armand; Provine, J; Alassaad, Kassem; Ferro, Gabriel; Vučković, Jelena

    2013-01-01

    We present the design, fabrication, and characterization of high quality factor and small mode volume planar photonic crystal cavities from cubic (3C) thin films (thickness ~ 200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band, with wavelengths from 1250 - 1600 nm. Finally, we discuss possible applications in nonlinear optics, optical interconnects, and quantum information science.

  3. Sintering of nano crystalline silicon carbide by doping with boron carbide

    Indian Academy of Sciences (India)

    M S Datta; A K Bandyopadhyay; B Chaudhuri

    2002-06-01

    Sinterable nano silicon carbide powders of mean particle size (37 nm) were prepared by attrition milling and chemical processing of an acheson type alpha silicon carbide having mean particle size of 0.39 m (390 nm). Pressureless sintering of these powders was achieved by addition of boron carbide of 0.5 wt% together with carbon of 1 wt% at 2050°C at vacuum (3 mbar) for 15 min. Nearly 99% sintered density was obtained. The mechanism of sintering was studied by scanning electron microscopy and transmission electron microscopy. This study shows that the mechanism is a solid-state sintering process. Polytype transformation from 6H to 4H was observed.

  4. Synthesis of silicon carbide-silicon nitride composite ultrafine particles using a carbon dioxide laser

    Energy Technology Data Exchange (ETDEWEB)

    Suzuki, Masaaki; Maniette, Yves; Nakata, Yoshinori; Okutani, Takeshi (Government Industrial Development Lab., Hokkaido, Sapporo (Japan))

    1993-05-01

    The synthesis and the structure of silicon carbide-silicon nitride (SiC-Si[sub 3]N[sub 4]) composite ultrafine particles have been studied. SiC-Si[sub 3]N[sub 4] composite ultrafine particles were prepared by irradiating a SiH[sub 4], C[sub 2]H[sub 4], and NH[sub 3] gas mixture with a CO[sub 2] laser at atmospheric pressure. The composition of composite powders changed with the reactant gas flow rate. The carbon and nitrogen content of the powder could be controlled in a wide range from 0 to 30 wt%. The composite powder, which contained 25.3 wt% carbon and 5.8 wt% nitrogen, had a [beta]-SiC structure. As the nitrogen content increased, SiC decreased and amorphous phase, Si[sub 3]N[sub 4], Si appeared. The results of XPS and lattice constant measurements suggested that Si, C, and N atoms were intimately mixed in the composite particles.

  5. PECVD silicon carbide surface micromachining technology and selected MEMS applications

    NARCIS (Netherlands)

    Rajaraman, V.; Pakula, L.S.; Yang, H.; French, P.J.; Sarro, P.M.

    2011-01-01

    Attractive material properties of plasma enhanced chemical vapour deposited (PECVD) silicon carbide (SiC) when combined with CMOS-compatible low thermal budget processing provides an ideal technology platform for developing various microelectromechanical systems (MEMS) devices and merging them with

  6. Influence of nanometric silicon carbide on phenolic resin composites properties

    Indian Academy of Sciences (India)

    GEORGE PELIN; CRISTINA-ELISABETA PELIN; ADRIANA STEFAN; ION DINC\\u{A}; ANTON FICAI; ECATERINA ANDRONESCU; ROXANA TRUSC\\u{A}

    2016-06-01

    This paper presents a preliminary study on obtaining and characterization of phenolic resin-based composites modified with nanometric silicon carbide. The nanocomposites were prepared by incorporating nanometric silicon carbide (nSiC) into phenolic resin at 0.5, 1 and 2 wt% contents using ultrasonication to ensure uniform dispersion of the nanopowder, followed by heat curing of the phenolic-based materials at controlled temperature profile up to 120$^{\\circ}$C. The obtained nanocomposites were characterized by FTIR spectroscopy and scanning electron microscopy analysis and evaluated in terms of mechanical, tribological and thermal stability under load. The results highlight the positive effect of the nanometric silicon carbide addition in phenolic resin on mechanical, thermo-mechanical and tribological performance, improving their strength, stiffness and abrasive properties. The best results were obtained for 1 wt% nSiC, proving that this value is the optimum nanometric silicon carbide content. The results indicate that these materials could be effectively used to obtain ablative or carbon–carbon composites in future studies.

  7. Design and Fabrication of Silicon Carbide Semiconductor Detectors

    Institute of Scientific and Technical Information of China (English)

    MENG; Xin; LIU; Yang; HE; Gao-kui

    2015-01-01

    The potential of silicon carbide(SiC)for use in semiconductor nuclear radiation detectors has been recognized for years.SiC detectors have now been demonstrated for high-resolution alpha particle and X-ray energy spectrometry,beta ray,gamma-ray,thermal-and fast-neutron

  8. Silicon carbide and other films and method of deposition

    Science.gov (United States)

    Mehregany, Mehran (Inventor); Zorman, Christian A. (Inventor); Fu, Xiao-An (Inventor); Dunning, Jeremy (Inventor)

    2011-01-01

    A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.

  9. Evidence for a silicon oxycarbide phase in the Nicalon silicon carbide fibre

    Energy Technology Data Exchange (ETDEWEB)

    Porte, L.; Sartre, A.

    1989-01-01

    The Nicalon silicon carbide fibre has been studied by X-ray photoelectron spectroscopy. Elements entering the fiber are carbon, silicon and oxygen. In addition to previously reported chemical entities (silicon carbide, silica and graphitic carbon) evidence is found of the presence of a new supplementary phase which is attributed to an intermediate silicon oxycarbide phase. As this phase is found to participate in very appreciable proportions to the composition of the fiber, some influence on the properties of this fiber can be anticipated. 17 references.

  10. Mullite Coating on Recrytallized Silicon Carbide and Its Cycling Oxidation Behavior

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Mullite coating on recrystallized silicon carbide was successfully prepared by the sol-gel route. The cycling oxidation of coated recrystallized silicon carbide was performed at 1500℃. For comparison, the oxidation of uncoated recrystallized silicon carbide was also carried out at the same condition. The results indicated that a layer of compact, adhesive and crack free mullite coating was found on the recrystallized silicon carbide. After oxidation, the new coatings exhibit adherence and crack resistance under thermal cycling between room temperature and 1500℃, therefore the oxidation resistance capability of silicon carbide was enhanced. With the increase of the dipping frequencies, namely, the increase of the thickness of mullite coating, the oxidation resistance of silicon carbide would be further improved. The formation mechanism of mullite coating was analyzed and discussed and the oxidation dynamics model of coatedmullite silicon carbide has been also proposed.

  11. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  12. Energy landscape of relaxed amorphous silicon

    Science.gov (United States)

    Valiquette, Francis; Mousseau, Normand

    2003-09-01

    We analyze the structure of the energy landscape of a well-relaxed 1000-atom model of amorphous silicon using the activation-relaxation technique (ART nouveau). Generating more than 40 000 events starting from a single minimum, we find that activated mechanisms are local in nature, that they are distributed uniformly throughout the model, and that the activation energy is limited by the cost of breaking one bond, independently of the complexity of the mechanism. The overall shape of the activation-energy-barrier distribution is also insensitive to the exact details of the configuration, indicating that well-relaxed configurations see essentially the same environment. These results underscore the localized nature of relaxation in this material.

  13. Dynamics of hydrogen in hydrogenated amorphous silicon

    Indian Academy of Sciences (India)

    Ranber Singh; S Prakash

    2003-07-01

    The problem of hydrogen diffusion in hydrogenated amorphous silicon (a-Si:H) is studied semiclassically. It is found that the local hydrogen concentration fluctuations-induced extra potential wells, if intense enough, lead to the localized electronic states in a-Si:H. These localized states are metastable. The trapping of electrons and holes in these states leads to the electrical degradation of the material. These states also act as recombination centers for photo-generated carriers (electrons and holes) which in turn may excite a hydrogen atom from a nearby Si–H bond and breaks the weak (strained) Si–Si bond thereby apparently enhancing the hydrogen diffusion and increasing the light-induced dangling bonds.

  14. Three-Terminal Amorphous Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Cheng-Hung Tai

    2011-01-01

    Full Text Available Many defects exist within amorphous silicon since it is not crystalline. This provides recombination centers, thus reducing the efficiency of a typical a-Si solar cell. A new structure is presented in this paper: a three-terminal a-Si solar cell. The new back-to-back p-i-n/n-i-p structure increased the average electric field in a solar cell. A typical a-Si p-i-n solar cell was also simulated for comparison using the same thickness and material parameters. The 0.28 μm-thick three-terminal a-Si solar cell achieved an efficiency of 11.4%, while the efficiency of a typical a-Si p-i-n solar cell was 9.0%. Furthermore, an efficiency of 11.7% was achieved by thickness optimization of the three-terminal solar cell.

  15. Study on the substrate-induced crystallisation of amorphous SiC-precursor ceramics. TIB/A; Untersuchungen zur substratinduzierten Kristallisation amorpher SiC-Precursorkeramiken

    Energy Technology Data Exchange (ETDEWEB)

    Rau, C.

    2000-12-01

    In the present thesis the crystallization behaviour of amorphous silicon-carbon materials (SiC{sub x}) was studied. The main topic of the experimental studies formed thereby the epitactical crystallization of thin silicon carbide layers on monocrystalline substrates of silicon carbides or silicon. Furthermore by thermolysis of the polymer amorphous SiC{sub x}-powder was obtained.

  16. RF Sputtering for preparing substantially pure amorphous silicon monohydride

    Science.gov (United States)

    Jeffrey, Frank R.; Shanks, Howard R.

    1982-10-12

    A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

  17. Microcavity effects in the photoluminescence of hydrogenated amorphous silicon nitride

    Science.gov (United States)

    Serpenguzel, Ali; Aydinli, Atilla; Bek, Alpan

    1998-07-01

    Fabry-Perot microcavities are used for the alteration of photoluminescence in hydrogenated amorphous silicon nitride grown with and without ammonia. The photoluminescence is red-near-infrared for the samples grown without ammonia, and blue-green for the samples grown with ammonia. In the Fabry- Perot microcavities, the amplitude of the photoluminescence is enhanced, while its linewidth is reduced with respect to the bulk hydrogenated amorphous silicon nitride. The microcavity was realized by a metallic back mirror and a hydrogenated amorphous silicon nitride--air or a metallic front mirror. The transmittance, reflectance, and absorbance spectra were also measured and calculated. The calculated spectra agree well with the experimental spectra. The hydrogenated amorphous silicon nitride microcavity has potential for becoming a versatile silicon based optoelectronic device such as a color flat panel display, a resonant cavity enhanced light emitting diode, or a laser.

  18. Silicon heterojunction solar cell and crystallization of amorphous silicon

    Science.gov (United States)

    Lu, Meijun

    The rapid growth of photovoltaics in the past decade brings on the soaring price and demand for crystalline silicon. Hence it becomes necessary and also profitable to develop solar cells with over 20% efficiency, using thin (˜100mum) silicon wafers. In this respect, diffused junction cells are not the best choice, since the inescapable heating in the diffusion process not only makes it hard to handle thin wafers, but also reduces carriers' bulk lifetime and impairs the crystal quality of the substrate, which could lower cell efficiency. An alternative is the heterojunction cells, such as amorphous silicon/crystalline silicon heterojunction (SHJ) solar cell, where the emitter layer can be grown at low temperature (solar cell, including the importance of intrinsic buffer layer; the discussion on the often observed anomalous "S"-shaped J-V curve (low fill factor) by using band diagram analysis; the surface passivation quality of intrinsic buffer and its relationship to the performance of front-junction SHJ cells. Although the a-Si:H is found to help to achieve high efficiency in c-Si heterojuntion solar cells, it also absorbs short wavelength (cells. Considering this, heterojunction with both a-Si:H emitter and base contact on the back side in an interdigitated pattern, i.e. interdigitated back contact silicon heterojunction (IBC-SHJ) solar cell, is developed. This dissertation will show our progress in developing IBC-SHJ solar cells, including the structure design; device fabrication and characterization; two dimensional simulation by using simulator Sentaurus Device; some special features of IBC-SHJ solar cells; and performance of IBC-SHJ cells without and with back surface buffer layers. Another trend for solar cell industry is thin film solar cells, since they use less materials resulting in lower cost. Polycrystalline silicon (poly-Si) is one promising thin-film material. It has the potential advantages to not only retain the performance and stability of c

  19. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    Science.gov (United States)

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Boeckl, John J.; Hellerstedt, Jack; Fuhrer, Michael S.; Iacopi, Francesca

    2016-07-01

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High-resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  20. Stability of deuterated amorphous silicon solar cells

    CERN Document Server

    Munyeme, G; Van der Meer, L F G; Dijkhuis, J I; Van der Weg, W F; Schropp, R

    2004-01-01

    In order to elucidate the microscopic mechanism for the earlier observed enhanced stability of deuterated amorphous silicon solar cells we conducted a side by-side study of fully deuterated intrinsic layers on crystalline silicon substrates using the free-electron laser facility at Nieuwegein (FELIX) to resonantly excite the Si-D stretching vibration and measure the various relaxation channels available to these modes, and of p-i-n solar cells with identical intrinsic absorber layers on glass/TCO substrates to record the degradation and stabilization of solar cell parameters under prolonged light soaking treatments. From our comparative study it is shown that a-Si:D has a superior resistance against light-induced defect creation as compared to a-Si:H and that this can now be explained in the light of the 'H collision model' since the initial step in the process, the release of H, is more likely than that of D. Thus, a natural explanation for the stability as observed in a-Si:D solar cells is provided.

  1. SILICON CARBIDE CERAMICS FOR COMPACT HEAT EXCHANGERS

    Energy Technology Data Exchange (ETDEWEB)

    DR. DENNIS NAGLE; DR. DAJIE ZHANG

    2009-03-26

    Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making high dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure which allows complete conversion of the carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low chemical reactivity and porosity while the cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800 C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm{sup -3} (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process was studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial Si

  2. SILICON CARBIDE CERAMICS FOR COMPACT HEAT EXCHANGERS

    Energy Technology Data Exchange (ETDEWEB)

    DR. DENNIS NAGLE; DR. DAJIE ZHANG

    2009-03-26

    Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making high dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure which allows complete conversion of the carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low chemical reactivity and porosity while the cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800 C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm{sup -3} (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process was studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial Si

  3. STATUS OF HIGH FLUX ISOTOPE REACTOR IRRADIATION OF SILICON CARBIDE/SILICON CARBIDE JOINTS

    Energy Technology Data Exchange (ETDEWEB)

    Katoh, Yutai [ORNL; Koyanagi, Takaaki [ORNL; Kiggans, Jim [ORNL; Cetiner, Nesrin [ORNL; McDuffee, Joel [ORNL

    2014-09-01

    Development of silicon carbide (SiC) joints that retain adequate structural and functional properties in the anticipated service conditions is a critical milestone toward establishment of advanced SiC composite technology for the accident-tolerant light water reactor (LWR) fuels and core structures. Neutron irradiation is among the most critical factors that define the harsh service condition of LWR fuel during the normal operation. The overarching goal of the present joining and irradiation studies is to establish technologies for joining SiC-based materials for use as the LWR fuel cladding. The purpose of this work is to fabricate SiC joint specimens, characterize those joints in an unirradiated condition, and prepare rabbit capsules for neutron irradiation study on the fabricated specimens in the High Flux Isotope Reactor (HFIR). Torsional shear test specimens of chemically vapor-deposited SiC were prepared by seven different joining methods either at Oak Ridge National Laboratory or by industrial partners. The joint test specimens were characterized for shear strength and microstructures in an unirradiated condition. Rabbit irradiation capsules were designed and fabricated for neutron irradiation of these joint specimens at an LWR-relevant temperature. These rabbit capsules, already started irradiation in HFIR, are scheduled to complete irradiation to an LWR-relevant dose level in early 2015.

  4. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    Energy Technology Data Exchange (ETDEWEB)

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  5. Silicon carbide high performance optics: a cost-effective, flexible fabrication process

    Science.gov (United States)

    Casstevens, John M.; Rashed, Abuagela; Plummer, Ronald; Bray, Don; Gates, Rob L.; Lara-Curzio, Edgar; Ferber, Matt K.; Kirkland, Tim

    2001-12-01

    Silicon carbide may well be the best known material for the manufacture of high performance optical components. This material offers many advantages over glasses and metals that have historically been used in high performance optical systems. A combination of extremely high specific stiffness (E/r), high thermal conductivity and outstanding dimensional stability make silicon carbide superior overall to beryllium and low-expansion glass ceramics. A major impediment to wide use of silicon carbide in optical systems has been the cost associated with preliminary shaping and final finishing of silicon carbide. Because silicon carbide is an extremely hard and strong material, precision machining can only be done with expensive diamond tooling on very stiff high quality machine tools. Near-net-shape slip casting of silicon carbide can greatly reduce the cost of silicon carbide mirror substrates but this process still requires significant diamond grinding of the cast components. The process described here begins by machining the component from all special type of graphite. This graphite can rapidly be machined with conventional multi-axis CNC machine tools to achieve any level of complexity and lightweighting required. The graphite is then directly converted completely to silicon carbide with very small and very predictable dimensional change. After conversion to silicon carbide the optical surface is coated with very fine grain CVD silicon carbide which is easily polished to extreme smoothness. Details of the fabrication process are described and photos and performance specifications of an eight-inch elliptical demonstration mirror are provided.

  6. Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

    Science.gov (United States)

    Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu

    2016-09-01

    High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiCf/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

  7. Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu, E-mail: lfchen@xmu.edu.cn

    2016-09-30

    High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiC{sub f}/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

  8. Nanocavity Shrinkage and Preferential Amorphization during Irradiation in Silicon

    Institute of Scientific and Technical Information of China (English)

    ZHU Xian-Fang; WANG Zhan-Guo

    2005-01-01

    @@ We model the recent experimental results and demonstrate that the internal shrinkage of nanocavities in silicon is intrinsically associated with preferential amorphization as induced by self-ion irradiation.

  9. Revised activation estimates for silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Heinisch, H.L. [Pacific Northwest National Lab., Richland, WA (United States); Cheng, E.T.; Mann, F.M.

    1996-10-01

    Recent progress in nuclear data development for fusion energy systems includes a reevaluation of neutron activation cross sections for silicon and aluminum. Activation calculations using the newly compiled Fusion Evaluated Nuclear Data Library result in calculated levels of {sup 26}Al in irradiated silicon that are about an order of magnitude lower than the earlier calculated values. Thus, according to the latest internationally accepted nuclear data, SiC is much more attractive as a low activation material, even in first wall applications.

  10. Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon

    Science.gov (United States)

    Bai, Feng; Li, Hong-Jin; Huang, Yuan-Yuan; Fan, Wen-Zhong; Pan, Huai-Hai; Wang, Zhuo; Wang, Cheng-Wei; Qian, Jing; Li, Yang-Bo; Zhao, Quan-Zhong

    2016-10-01

    We have used femtosecond laser pulses to ablate monocrystalline silicon wafer. Raman spectroscopy and X-ray diffraction analysis of ablation surface indicates horizontally polarized laser beam shows an enhancement in amorphization efficiency by a factor of 1.6-1.7 over the circularly polarized laser ablation. This demonstrates that one can tune the amorphization efficiency through the polarization of irradiation laser.

  11. Electronic transport properties of the armchair silicon carbide nanotube

    Energy Technology Data Exchange (ETDEWEB)

    Song Jiuxu; Yang Yintang; Liu Hongxia [Key Laboratory of Ministry of Education for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); Guo Lixin [School of Science, Xidian University, Xi' an 710071 (China); Zhang Zhiyong, E-mail: songjiuxu@126.com [Information Science and Technology Institution, Northwest University, Xi' an 710069 (China)

    2010-11-15

    The electronic transport properties of the armchair silicon carbide nanotube (SiCNT) are investigated by using the combined nonequilibrium Green's function method with density functional theory. In the equilibrium transmission spectrum of the nanotube, a transmission valley of about 2.12 eV is discovered around Fermi energy, which means that the nanotube is a wide band gap semiconductor and consistent with results of first principle calculations. More important, negative differential resistance is found in its current voltage characteristic. This phenomenon originates from the variation of density of states caused by applied bias voltage. These investigations are meaningful to modeling and simulation in silicon carbide nanotube electronic devices.

  12. Diffusion Bonding of Silicon Carbide for MEMS-LDI Applications

    Science.gov (United States)

    Halbig, Michael C.; Singh, Mrityunjay; Shpargel, Tarah P.; Kiser, J. Douglas

    2007-01-01

    A robust joining approach is critically needed for a Micro-Electro-Mechanical Systems-Lean Direct Injector (MEMS-LDI) application which requires leak free joints with high temperature mechanical capability. Diffusion bonding is well suited for the MEMS-LDI application. Diffusion bonds were fabricated using titanium interlayers between silicon carbide substrates during hot pressing. The interlayers consisted of either alloyed titanium foil or physically vapor deposited (PVD) titanium coatings. Microscopy shows that well adhered, crack free diffusion bonds are formed under optimal conditions. Under less than optimal conditions, microcracks are present in the bond layer due to the formation of intermetallic phases. Electron microprobe analysis was used to identify the reaction formed phases in the diffusion bond. Various compatibility issues among the phases in the interlayer and substrate are discussed. Also, the effects of temperature, pressure, time, silicon carbide substrate type, and type of titanium interlayer and thickness on the microstructure and composition of joints are discussed.

  13. Room temperature quantum emission from cubic silicon carbide nanoparticles.

    Science.gov (United States)

    Castelletto, Stefania; Johnson, Brett C; Zachreson, Cameron; Beke, David; Balogh, István; Ohshima, Takeshi; Aharonovich, Igor; Gali, Adam

    2014-08-26

    The photoluminescence (PL) arising from silicon carbide nanoparticles has so far been associated with the quantum confinement effect or to radiative transitions between electronically active surface states. In this work we show that cubic phase silicon carbide nanoparticles with diameters in the range 45-500 nm can host other point defects responsible for photoinduced intrabandgap PL. We demonstrate that these nanoparticles exhibit single photon emission at room temperature with record saturation count rates of 7 × 10(6) counts/s. The realization of nonclassical emission from SiC nanoparticles extends their potential use from fluorescence biomarker beads to optically active quantum elements for next generation quantum sensing and nanophotonics. The single photon emission is related to single isolated SiC defects that give rise to states within the bandgap.

  14. Preferential killing of cancer cells using silicon carbide quantum dots.

    Science.gov (United States)

    Mognetti, Barbara; Barberis, Alessandro; Marino, Silvia; Di Carlo, Francesco; Lysenko, Vladimir; Marty, Olivier; Géloën, Alain

    2010-12-01

    Silicon carbide quantum dots are highly luminescent biocompatible nanoparticles whose properties might be of particular interest for biomedical applications. In this study we investigated Silicon Carbide Quantum Dots (3C-SiC QDs) cellular localisation and influence on viability and proliferation on oral squamous carcinoma (AT-84 and HSC) and immortalized cell lines (S-G). They clearly localize into the nuclei, but the presence of 3C-SiC QDs in culture medium provoke morphological changes in cultured cells. We demonstrate that 3C-SiC QDs display dose- and time-dependent selective cytotoxicity on cancer versus immortalized cells in vitro. Since one of the limitations of classical antineoplastic drugs is their lack of selectivity, these results open a new way in the search for antiproliferative drugs.

  15. Wide-Pulse Evaluation of 0.5 CM2 Silicon Carbide SGTO

    Science.gov (United States)

    2009-06-01

    Silicon carbide Super-GTOs are being pursued by the Army as a replacement for current silicon-based, high-power pulse switches. In this study, 0.5...cm2 silicon carbide SGTOs were evaluated in an RLC pulse circuit which provided a half-sine shaped pulse at a width of 1 ms. The parameters assessed

  16. PREPARATION OF B-MODIFICATION SILICON CARBIDE ALLOYED WITH VARIOUS IMPURITIES,

    Science.gov (United States)

    The beta-modification of silicon carbide can be obtained by any of the following methods: (1) synthesis from silicon and carbon (graphite) at 1400...certain metals, a process based on the substantial temperature variation of the solubility of silicon carbide in fused metals; beta-SiC is obtained in

  17. Sintering of nano crystalline silicon carbide doping with aluminium nitride

    Indian Academy of Sciences (India)

    M S Datta; A K Bandyopadhyay; B Chaudhuri

    2002-04-01

    Sinterable silicon carbide powders were prepared by attrition milling and chemical processing of an acheson type -SiC. Pressureless sintering of these powders was achieved by addition of aluminium nitride together with carbon. Nearly 99% sintered density was obtained. The mechanism of sintering was studied by scanning electron microscopy and transmission electron microscopy. This study shows that the mechanism is a solid sintering process.

  18. Hydrogen effusion from tritiated amorphous silicon

    Science.gov (United States)

    Kherani, N. P.; Liu, B.; Virk, K.; Kosteski, T.; Gaspari, F.; Shmayda, W. T.; Zukotynski, S.; Chen, K. P.

    2008-01-01

    Results for the effusion and outgassing of tritium from tritiated hydrogenated amorphous silicon (a-Si:H:T) films are presented. The samples were grown by dc-saddle field glow discharge at various substrate temperatures between 150 and 300°C. The tracer property of radioactive tritium is used to detect tritium release. Tritium effusion measurements are performed in a nonvacuum ion chamber and are found to yield similar results as reported for standard high vacuum technique. The results suggest for decreasing substrate temperature the growth of material with an increasing concentration of voids. These data are corroborated by analysis of infrared absorption data in terms of microstructure parameters. For material of low substrate temperature (and high void concentration) tritium outgassing in air at room temperature was studied, and it was found that after 600h about 0.2% of the total hydrogen (hydrogen+tritium) content is released. Two rate limiting processes are identified. The first process, fast tritium outgassing with a time constant of 15h, seems to be related to surface desorption of tritiated water (HTO) with a free energy of desorption of 1.04eV. The second process, slow tritium outgassing with a time constant of 200-300h, appears to be limited by oxygen diffusivity in a growing oxide layer. This material of lowest H stability would lose half of the hydrogen after 60years.

  19. Mechanism of combustion synthesis of silicon carbide

    Science.gov (United States)

    Narayan, J.; Raghunathan, R.; Chowdhury, R.; Jagannadham, K.

    1994-06-01

    The mechanism of self-propagating high-temperature synthesis (SHS) or combustion synthesis of SiC has been investigated using pellets consisting of silicon and carbon powders. The combustion reaction was initiated by rapidly heating the pellet on a graphite strip. The reaction products were analyzed using scanning and transmission electron microscopy, x-ray diffraction, and Raman spectroscopy. The results show that it is possible to produce β-SiC without any residual silicon and carbon. Occasionally, a very small number density of α-SiC precipitates embedded in the β-SiC matrix was observed. Based upon the microstructural features, it is proposed that the formation of SiC involves the dissolution of carbon into liquid silicon, diffusion of C into liquid silicon, and subsequent precipitation of SiC. The size of the SiC crystallites is determined by the diffusion coefficient of carbon in liquid silicon and the time available for SiC precipitation. The activation enthalpy for the SHS process is estimated to be 59±3 kcal/mol.

  20. Barrier properties of nano silicon carbide designed chitosan nanocomposites.

    Science.gov (United States)

    Pradhan, Gopal C; Dash, Satyabrata; Swain, Sarat K

    2015-12-10

    Nano silicon carbide (SiC) designed chitosan nanocomposites were prepared by solution technique. Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD) were used for studying structural interaction of nano silicon carbide (SiC) with chitosan. The morphology of chitosan/SiC nanocomposites was investigated by field emission scanning electron microscope (FESEM), and high resolution transmission electron microscope (HRTEM). The thermal stability of chitosan was substantially increased due to incorporation of stable silicon carbide nanopowder. The oxygen permeability of chitosan/SiC nanocomposites was reduced by three folds as compared to the virgin chitosan. The chemical resistance properties of chitosan were enhanced due to the incorporation of nano SiC. The biodegradability was investigated using sludge water. The tensile strength of chitosan/SiC nanocomposites was increased with increasing percentage of SiC. The substantial reduction in oxygen barrier properties in combination with increased thermal stability, tensile strength and chemical resistance properties; the synthesized nanocomposite may be suitable for packaging applications.

  1. Parallel microwave chemistry in silicon carbide microtiter platforms: a review.

    Science.gov (United States)

    Kappe, C Oliver; Damm, Markus

    2012-02-01

    In this review, applications of silicon carbide-based microtiter platforms designed for use in combination with dedicated multimode microwave reactors are described. These platforms are employed not only for the efficient parallel synthesis of compound libraries, but also in the context of high-throughput reaction screening/optimization and a number of other (bio)analytical and biomedical applications. Since the semiconducting plate material (silicon carbide) is strongly microwave absorbing and possesses high thermal conductivity, no temperature gradients across the microtiter plate exist. Therefore, many of the disadvantages experienced in attempting to perform microtiter plate chemistry under conventional microwave conditions can be eliminated. In general, the silicon carbide-based microtiter platforms allow sealed vessel processing (either directly in the well or in glass vials placed into the wells) of volumes ranging from 0.02-3.0 mL at a maximum temperature/pressure limit of 200°C/20 bar. Depending on the specific plate and rotor configuration, a maximum of 80-192 transformations can be carried out in parallel in a single microwave irradiation experiment under strict temperature control. A platform type utilizing HPLC/GC vials as reaction vessels allows analysis directly from the reaction vessel eliminating the need for a transfer step from the reaction to the analysis vial. The latter system is particularly useful for analytical applications as well as reaction optimization/screening.

  2. Silicon Carbide Mounts for Fabry-Perot Interferometers

    Science.gov (United States)

    Lindemann, Scott

    2011-01-01

    Etalon mounts for tunable Fabry- Perot interferometers can now be fabricated from reaction-bonded silicon carbide structural components. These mounts are rigid, lightweight, and thermally stable. The fabrication of these mounts involves the exploitation of post-casting capabilities that (1) enable creation of monolithic structures having reduced (in comparison with prior such structures) degrees of material inhomogeneity and (2) reduce the need for fastening hardware and accommodations. Such silicon carbide mounts could be used to make lightweight Fabry-Perot interferometers or could be modified for use as general lightweight optical mounts. Heretofore, tunable Fabry-Perot interferometer structures, including mounting hardware, have been made from the low-thermal-expansion material Invar (a nickel/iron alloy) in order to obtain the thermal stability required for spectroscopic applications for which such interferometers are typically designed. However, the high mass density of Invar structures is disadvantageous in applications in which there are requirements to minimize mass. Silicon carbide etalon mounts have been incorporated into a tunable Fabry-Perot interferometer of a prior design that originally called for Invar structural components. The strength, thermal stability, and survivability of the interferometer as thus modified are similar to those of the interferometer as originally designed, but the mass of the modified interferometer is significantly less than the mass of the original version.

  3. Bonding and Integration Technologies for Silicon Carbide Based Injector Components

    Science.gov (United States)

    Halbig, Michael C.; Singh, Mrityunjay

    2008-01-01

    Advanced ceramic bonding and integration technologies play a critical role in the fabrication and application of silicon carbide based components for a number of aerospace and ground based applications. One such application is a lean direct injector for a turbine engine to achieve low NOx emissions. Ceramic to ceramic diffusion bonding and ceramic to metal brazing technologies are being developed for this injector application. For the diffusion bonding, titanium interlayers (PVD and foils) were used to aid in the joining of silicon carbide (SiC) substrates. The influence of such variables as surface finish, interlayer thickness (10, 20, and 50 microns), processing time and temperature, and cooling rates were investigated. Microprobe analysis was used to identify the phases in the bonded region. For bonds that were not fully reacted an intermediate phase, Ti5Si3Cx, formed that is thermally incompatible in its thermal expansion and caused thermal stresses and cracking during the processing cool-down. Thinner titanium interlayers and/or longer processing times resulted in stable and compatible phases that did not contribute to microcracking and resulted in an optimized microstructure. Tensile tests on the joined materials resulted in strengths of 13-28 MPa depending on the SiC substrate material. Non-destructive evaluation using ultrasonic immersion showed well formed bonds. For the joining technology of brazing Kovar fuel tubes to silicon carbide, preliminary development of the joining approach has begun. Various technical issues and requirements for the injector application are addressed.

  4. Large isotopic anomalies of Si, C, N and noble gases in interstellar silicon carbide from the Murray meteorite

    Science.gov (United States)

    Zinner, E.; Ming, T.; Anders, E.

    1987-12-01

    Primitive meteorites contain several noble gas components with anomalous isotopic compositions which imply that they - and their solid 'carrier' phases - are of exotic, pre-solar origin. The authors found that minor fractions of the Murray meteorite contain two minerals not previously seen in meteorites: silicon carbide and an amorphous Si-O phase. They report ion microprobe analyses of these phases which reveal very large isotopic anomalies in silicon, nitrogen and carbon, exceeding the highest anomalies previously measured by factors of up to ≡50. It is concluded that these phases are circumstellar grains from carbon-rich stars, whose chemical inertness allowed them to survive in exceptionally well-preserved form.

  5. Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

    Science.gov (United States)

    Yang, Jie

    2015-01-01

    Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

  6. Synthesis and Photoluminescence Property of Silicon Carbide Nanowires Via Carbothermic Reduction of Silica

    OpenAIRE

    Luo Xiaogang; Ma Wenhui; Zhou Yang; Liu Dachun; Yang Bin; Dai Yongnian

    2009-01-01

    Abstract Silicon carbide nanowires have been synthesized at 1400 °C by carbothermic reduction of silica with bamboo carbon under normal atmosphere pressure without metallic catalyst. X-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, transmission electron microscopy and Fourier transformed infrared spectroscopy were used to characterize the silicon carbide nanowires. The results show that the silicon carbide nanowires have a core–shell structure and gr...

  7. Evaluation of Bidirectional Silicon Carbide Solid-State Circuit Breaker v3.2

    Science.gov (United States)

    2013-07-01

    Evaluation of Bidirectional Silicon Carbide Solid-State Circuit Breaker v3.2 by D. Urciuoli ARL-MR-0845 July 2013...Evaluation of Bidirectional Silicon Carbide Solid-State Circuit Breaker v3.2 D. Urciuoli Sensors and Electron Devices Directorate, ARL...2012 to 20 March 2013 4. TITLE AND SUBTITLE Evaluation of Bidirectional Silicon Carbide Solid-State Circuit Breaker v3.2 5a. CONTRACT NUMBER 5b

  8. Graphitized silicon carbide microbeams: wafer-level, self-aligned graphene on silicon wafers.

    Science.gov (United States)

    Cunning, Benjamin V; Ahmed, Mohsin; Mishra, Neeraj; Kermany, Atieh Ranjbar; Wood, Barry; Iacopi, Francesca

    2014-08-15

    Currently proven methods that are used to obtain devices with high-quality graphene on silicon wafers involve the transfer of graphene flakes from a growth substrate, resulting in fundamental limitations for large-scale device fabrication. Moreover, the complex three-dimensional structures of interest for microelectromechanical and nanoelectromechanical systems are hardly compatible with such transfer processes. Here, we introduce a methodology for obtaining thousands of microbeams, made of graphitized silicon carbide on silicon, through a site-selective and wafer-scale approach. A Ni-Cu alloy catalyst mediates a self-aligned graphitization on prepatterned SiC microstructures at a temperature that is compatible with silicon technologies. The graphene nanocoating leads to a dramatically enhanced electrical conductivity, which elevates this approach to an ideal method for the replacement of conductive metal films in silicon carbide-based MEMS and NEMS devices.

  9. Field electron emission enhancement of amorphous carbon through a niobium carbide buffer layer

    Science.gov (United States)

    Xu, L.; Wang, C.; Hu, C. Q.; Zhao, Z. D.; Yu, W. X.; Zheng, W. T.

    2009-01-01

    We investigate the field electron emission for amorphous carbon (a-C) films deposited on Si (100) substrates through a niobium carbide buffer layer with different structures and find that the niobium carbide buffer layer can substantially improve the electron field emission properties of a-C films, which can be attributed to an increase in the enhancement factor β on the surface of a-C films after the insertion of the niobium carbide layer in between a-C film and substrate. Moreover, a phase transition for niobium carbide layer from hexagonal (Nb2C) to cubic (NbC) structure, revealed by x-ray diffraction, further enhances the electron field emission. The first-principles calculated results show that the work function of NbC is lower than that of Nb2C, which is the reason why the electron emission of a-C is further enhanced.

  10. Production of technical silicon and silicon carbide from rice-husk

    Directory of Open Access Journals (Sweden)

    A. Z. Issagulov

    2014-10-01

    Full Text Available In the article there are studied physical and chemical properties of silicon-carbonic raw material – rice-husk, thermophysical characteristics of the process of rice-husk pyrolysis in nonreactive and oxidizing environment; structure and phase composition of products of the rice-husk pyrolysis in interval of temperatures 150 – 850 °С and high temperature pyrolysis in interval of temperatures 900 – 1 500 °С. There are defined the silicon-carbon production conditions, which meet the requirements applicable to charging materials at production of technical silicon and silicon carbide.

  11. Spin-photon entanglement interfaces in silicon carbide defect centers

    Science.gov (United States)

    Economou, Sophia E.; Dev, Pratibha

    2016-12-01

    Optically active spins in solid-state systems can be engineered to emit photons that are entangled with the spin in the solid. This allows for applications such as quantum communications, quantum key distribution, and distributed quantum computing. Recently, there has been a strong interest in silicon carbide defects, as they emit very close to the telecommunication wavelength, making them excellent candidates for long range quantum communications. In this work we develop explicit schemes for spin-photon entanglement in several SiC defects: the silicon monovacancy, the silicon divacancy, and the NV center in SiC. Distinct approaches are given for (i) single-photon and spin entanglement and (ii) the generation of long strings of entangled photons. The latter are known as cluster states and comprise a resource for measurement-based quantum information processing.

  12. Liquid-Liquid Phase Transition in Nanoconfined Silicon Carbide.

    Science.gov (United States)

    Wu, Weikang; Zhang, Leining; Liu, Sida; Ren, Hongru; Zhou, Xuyan; Li, Hui

    2016-03-01

    We report theoretical evidence of a liquid-liquid phase transition (LLPT) in liquid silicon carbide under nanoslit confinement. The LLPT is characterized by layering transitions induced by confinement and pressure, accompanying the rapid change in density. During the layering transition, the proportional distribution of tetracoordinated and pentacoordinated structures exhibits remarkable change. The tricoordinated structures lead to the microphase separation between silicon (with the dominant tricoordinated, tetracoordinated, and pentacoordinated structures) and carbon (with the dominant tricoordinated structures) in the layer close to the walls. A strong layer separation between silicon atoms and carbon atoms is induced by strong wall-liquid forces. Importantly, the pressure confinement phase diagram with negative slopes for LLPT lines indicates that, under high pressure, the LLPT is mainly confinement-induced, but under low pressure, it becomes dominantly pressure-induced.

  13. Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer

    Science.gov (United States)

    Antipov, V. V.; Kukushkin, S. A.; Osipov, A. V.

    2017-02-01

    An epitaxial 1-3-μm-thick cadmium telluride film has been grown on silicon with a buffer silicon carbide layer using the method of open thermal evaporation and condensation in vacuum for the first time. The optimum substrate temperature was 500°C at an evaporator temperature of 580°C, and the growth time was 4 s. In order to provide more qualitative growth of cadmium telluride, a high-quality 100-nm-thick buffer silicon carbide layer was previously synthesized on the silicon surface using the method of topochemical substitution of atoms. The ellipsometric, Raman, X-ray diffraction, and electron-diffraction analyses showed a high structural perfection of the CdTe layer in the absence of a polycrystalline phase.

  14. Continuous synthesis of silicon carbide whiskers

    Science.gov (United States)

    Choi, Heon-Jin; Lee, June-Gunn

    1995-04-01

    Experimental synthesis of SiC whiskers coupled with thermodynamic calculations revealed the preferred reaction routes for the efficient synthesis of SiC whiskers. This formed the basis for the design of a continuous reactor, which consists of a boat-train loaded with silica-carbon mixture and iron-coated graphite substrate above it in an alumina-tube reactor. High-quality SiC whiskers have been grown with diameters of 1-3 micron. The yield was about 30% based on the silicon input as SiO2 and output as SiC whiskers. This demonstrates the feasibility of continuous SiC whiskers production without the additional processes of purification and classification.

  15. Silicon Carbide Emitter Turn-Off Thyristor

    Directory of Open Access Journals (Sweden)

    Jun Wang

    2008-01-01

    Full Text Available A novel MOS-controlled SiC thyristor device, the SiC emitter turn-off thyristor (ETO is a promising technology for future high-voltage switching applications because it integrates the excellent current conduction capability of a SiC thyristor with a simple MOS-control interface. Through unity-gain turn-off, the SiC ETO also achieves excellent Safe Operation Area (SOA and faster switching speeds than silicon ETOs. The world's first 4.5-kV SiC ETO prototype shows a forward voltage drop of 4.26 V at 26.5 A/cm2 current density at room and elevated temperatures. Tested in an inductive circuit with a 2.5 kV DC link voltage and a 9.56-A load current, the SiC ETO shows a fast turn-off time of 1.63 microseconds and a low 9.88 mJ turn-off energy. The low switching loss indicates that the SiC ETO could operate at about 4 kHz if 100 W/cm2 conduction and the 100 W/cm2 turn-off losses can be removed by the thermal management system. This frequency capability is about 4 times higher than 4.5-kV-class silicon power devices. The preliminary demonstration shows that the SiC ETO is a promising candidate for high-frequency, high-voltage power conversion applications, and additional developments to optimize the device for higher voltage (>5 kV and higher frequency (10 kHz are needed.

  16. Microstructural Evolution of Chloride-Cleaned Silicon Carbide Aluminum Composites

    Science.gov (United States)

    Adeosun, S. O.; Akpan, E. I.; Gbenebor, O. P.; Balogun, S. A.

    2016-02-01

    This study examines the synergy between reinforcement surface modifications on the evolution of microstructures of AA6011-silicon carbide particle (SiCp) composites in multidirectional solidification. Silicon carbide particles (SiCp) were cleaned with ammonium chloride, tin(II) chloride, sodium chloride, and palladium(II) chloride and used as reinforcement to cast AA6011-SiCp composites by applying the stir casting method. A scanning electron microscope and x-ray diffractometer were used to investigate the morphology and phases present, respectively, in the composite material. Results show that wetting agents were effective as they inhibited the formation of Al4C3 in all modified composites. The modified SiCp was found to have varying effects on the morphology, dendrite arm size and direction, size and configuration of AlFeSi, and the amount of eutectic silicon depending on the concentration of the reagent and cleaning time. The highest effect was shown by the use of 40 g/L of tin(II) chloride. The composites had short dendritic arms, good interfacial interaction, and only a few crystals of AlFeSi.

  17. Photoluminescence and Raman spectroscopy characterization of boron- and nitrogen-doped 6H silicon carbide

    DEFF Research Database (Denmark)

    Ou, Yiyu; Jokubavicius, Valdas; Liu, Chuan

    2011-01-01

    Boron - and nitrogen-doped 6H silicon carbide epilayers grown on low off-axis 6H silicon carbide substrates have been characterized by photoluminescence and Raman spectroscopy. Combined with secondary ion mass spectrometry results, preferable doping type and optimized concentration could...

  18. THE CRYSTAL STRUCTURE OF THE NEW SILICON CARBIDE POLYMORPH 69R,

    Science.gov (United States)

    The 69R polymorph is one of the 32 silicon carbide polymorphs recently discovered by us. The space group is R3m and the unit cell is hexagonal with...and in two industrial silicon carbide crystal plates. They all pair with the fundamental type 6H. The five ways of pairing are: 6H + 69R + 87R, 6H

  19. Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere

    Science.gov (United States)

    Hersam, Mark C.; Lipson, Albert L.; Bandyopadhyay, Sudeshna; Karmel, Hunter J; Bedzyk, Michael J

    2014-05-27

    A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.

  20. Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

    Science.gov (United States)

    Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

    2012-01-01

    We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

  1. Structural Evolution of Silicon Carbide Nanopowders during the Sintering Process

    Directory of Open Access Journals (Sweden)

    Galina Volkova

    2014-01-01

    Full Text Available Processes of sintering of silicon carbide nanopowder were investigated. Values of density (ρ=3.17 g/cm3 and strength (σ=450 MPa were obtained. Within the theory of dispersed systems, the temperature evolution of the materials structure was considered. The relationship between sintering temperature, characteristics of crystal structure and physical properties, in particular, density, and strength of aforementioned ceramics was established. It was concluded that it is necessary to suppress the anomalous diffusion at temperatures above 2080°C.

  2. Thermal Properties of Polyimide Composites with Nanostructured Silicon Carbide

    Directory of Open Access Journals (Sweden)

    Alyona Igorevna Wozniak

    2016-12-01

    Full Text Available A series of polyimide composites reinforced with different loadings of silicon carbide (SiC nanoparticles are prepared by in-situ polymerization technique. The polyimide (PI matrix resin is derived from 4,4’-oxydianiline (4,4’-ODA and pyromelliticdianhydride (PMDA. The dispersions of SiC nanoparticles are prepared via ultrasonic irradiation or mechanical homogenization. In this method, the SiC nanoparticles are dispersed in diamine solution followed by polymerization with dianhydride. The composites obtained under sonication were found to have lower thermal properties than composites prepared under homogenization.

  3. Molybdenum isotopic composition of single silicon carbides from supernovae.

    Energy Technology Data Exchange (ETDEWEB)

    Amari, S.; Clayton, R. N.; Davis, A. M.; Lewis, R. S.; Pellin, M. J.

    1999-02-03

    Presolar silicon carbide grains form in a variety of types of stars, including asymptotic giant branch red giant stars and supernovae. The dominant mechanisms of heavy element nucleosynthesis, the s-process and r-process, are thought to occur in AGB stars and supernovae, respectively. We have previously reported that mainstream SiC grains have strong enrichments in the s-process isotopes of Sr, Zr and Mo. We report here the first measurements of Mo isotopes in X-type SiC grains, which have previously been identified as having formed from supernova ejecta.

  4. Catalytic synthesis of silicon carbide preceramic polymers: Polycarbosilanes

    Energy Technology Data Exchange (ETDEWEB)

    Berry, D.H.

    1991-11-01

    Polycarbosilanes are the most successful and widely studied class of polymer precursors for silicon carbide, but traditional methods for thier synthesis are inefficient and nonselective. This project is focused on developing transition metal catalysts for the synthesis of polycarbosilanes and other perceramic polymers. In recent work we have developed the first homogeneous transition metal catalysts for the dehydrogenative coupling of simple alkyl silanes to oligomeric and polymeric carbosilanes, H-(SiR{sub 2}CR{prime}{sub 2}){sub n}-SiR{sub 3}. Future work will help elucidate the mechanism of the catalytic process, explore the use of hydrogen acceptors as reaction accelerators, and develop new and more active catalysts.

  5. Synthesis of silicon carbide nanocrystals from waste polytetrafluoroethylene.

    Science.gov (United States)

    Wang, Liangbiao; Cheng, Qinglin; Qin, Hengfei; Li, Zhongchun; Lou, Zhengsong; Lu, Juanjuan; Zhang, Junhao; Zhou, Quanfa

    2017-02-28

    Resource utilization of waste plastic could solve the problem of environmental pollution and simultaneously relieve energy shortages, achieving sustainable development. In this study, the conversion of waste polytetrafluoroethylene (PTFE) to cubic silicon carbide (SiC) nanoparticles has been described. The structures and morphologies of the obtained SiC were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Furthermore, the FTIR spectrum of the obtained SiC sample suggests that the waste PTFE was completely converted into SiC in our approach.

  6. PROPERTIES OF DEFECTS AND IMPLANTS IN Mg+ IMPLANTED SILICON CARBIDE

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Weilin; Zhu, Zihua; Varga, Tamas; Bowden, Mark E.; Manandhar, Sandeep; Roosendaal, Timothy J.; Hu, Shenyang Y.; Henager, Charles H.; Kurtz, Richard J.; Wang, Yongqiang

    2013-09-25

    As a candidate material for fusion reactor designs, silicon carbide (SiC) under high-energy neutron irradiation undergoes atomic displacement damage and transmutation reactions that create magnesium as one of the major metallic products. The presence of Mg and lattice disorder in SiC is expected to affect structural stability and degrade thermo-mechanical properties that could limit SiC lifetime for service. We have initiated a combined experimental and computational study that uses Mg+ ion implantation and multiscale modeling to investigate the structural and chemical effects in Mg implanted SiC and explore possible property degradation mechanisms.

  7. Demonstration of Minimally Machined Honeycomb Silicon Carbide Mirrors

    Science.gov (United States)

    Goodman, William

    2012-01-01

    Honeycomb silicon carbide composite mirrors are made from a carbon fiber preform that is molded into a honeycomb shape using a rigid mold. The carbon fiber honeycomb is densified by using polymer infiltration pyrolysis, or through a reaction with liquid silicon. A chemical vapor deposit, or chemical vapor composite (CVC), process is used to deposit a polishable silicon or silicon carbide cladding on the honeycomb structure. Alternatively, the cladding may be replaced by a freestanding, replicated CVC SiC facesheet that is bonded to the honeycomb. The resulting carbon fiber-reinforced silicon carbide honeycomb structure is a ceramic matrix composite material with high stiffness and mechanical strength, high thermal conductivity, and low CTE (coefficient of thermal expansion). This innovation enables rapid, inexpensive manufacturing. The web thickness of the new material is less than 1 millimeter, and core geometries tailored. These parameters are based on precursor carbon-carbon honeycomb material made and patented by Ultracor. It is estimated at the time of this reporting that the HoneySiC(Trademark) will have a net production cost on the order of $38,000 per square meter. This includes an Ultracor raw material cost of about $97,000 per square meter, and a Trex silicon carbide deposition cost of $27,000 per square meter. Even at double this price, HoneySiC would beat NASA's goal of $100,000 per square meter. Cost savings are estimated to be 40 to 100 times that of current mirror technologies. The organic, rich prepreg material has a density of 56 kilograms per cubic meter. A charred carbon-carbon panel (volatile organics burnt off) has a density of 270 kilograms per cubic meter. Therefore, it is estimated that a HoneySiC panel would have a density of no more than 900 kilograms per cubic meter, which is about half that of beryllium and about onethird the density of bulk silicon carbide. It is also estimated that larger mirrors could be produced in a matter of weeks

  8. Investigation on the Effects of Titanium Diboride Particle Size on Radiation Shielding Properties of Titanium Diboride Reinforced Boron Carbide-Silicon Carbide Composites

    OpenAIRE

    A.O. Addemir; A.C. Akarsu; A.B. Tugrul; B. Buyuk

    2012-01-01

    Composite materials have wide application areas in industry. Boron Carbide is an important material for nuclear technology. Silicon carbide is a candidate material in the first wall and blankets of fusion power plants. Titanium diboride reinforced boron carbide-silicon carbide composites which were produced from different titanium diboride particle sizes and ratios were studied for searching of the behaviour against the gamma ray. Cs-137 gamma radioisotope was used as gamma source in the expe...

  9. Modeling and simulation of boron-doped nanocrystalline silicon carbide thin film by a field theory.

    Science.gov (United States)

    Xiong, Liming; Chen, Youping; Lee, James D

    2009-02-01

    This paper presents the application of a multiscale field theory in modeling and simulation of boron-doped nanocrystalline silicon carbide (B-SiC). The multiscale field theory was briefly introduced. Based on the field theory, numerical simulations show that intergranular glassy amorphous films (IGFs) and nano-sized pores exist in triple junctions of the grains for nanocrystalline B-SiC. Residual tensile stress in the SiC grains and compressive stress on the grain boundaries (GBs) were observed. Under tensile loading, it has been found that mechanical response of 5 wt% boron-SiC exhibits five characteristic regimes. Deformation mechanism at atomic scale has been revealed. Tensile strength and Young's modulus of nanocrystalline SiC were accurately reproduced.

  10. Experimental investigation on material migration phenomena in micro-EDM of reaction-bonded silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Liew, Pay Jun [Department of Mechanical Systems and Design, Tohoku University, Aramaki Aoba 6-6-01, Aoba-ku, Sendai, 980-8579 (Japan); Manufacturing Process Department, Faculty of Manufacturing Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100, Durian Tunggal, Melaka (Malaysia); Yan, Jiwang, E-mail: yan@mech.keio.ac.jp [Department of Mechanical Engineering, Faculty of Science and Technology, Keio University, Hiyoshi 3-14-1, Kohoku-ku, Yokohama, 223-8522 (Japan); Kuriyagawa, Tsunemoto [Department of Mechanical Systems and Design, Tohoku University, Aramaki Aoba 6-6-01, Aoba-ku, Sendai, 980-8579 (Japan)

    2013-07-01

    Material migration between tool electrode and workpiece material in micro electrical discharge machining of reaction-bonded silicon carbide was experimentally investigated. The microstructural changes of workpiece and tungsten tool electrode were examined using scanning electron microscopy, cross sectional transmission electron microscopy and energy dispersive X-ray under various voltage, capacitance and carbon nanofibre concentration in the dielectric fluid. Results show that tungsten is deposited intensively inside the discharge-induced craters on the RB-SiC surface as amorphous structure forming micro particles, and on flat surface region as a thin interdiffusion layer of poly-crystalline structure. Deposition of carbon element on tool electrode was detected, indicating possible material migration to the tool electrode from workpiece material, carbon nanofibres and dielectric oil. Material deposition rate was found to be strongly affected by workpiece surface roughness, voltage and capacitance of the electrical discharge circuit. Carbon nanofibre addition in the dielectric at a suitable concentration significantly reduced the material deposition rate.

  11. Decoding the message from meteoritic stardust silicon carbide grains

    CERN Document Server

    Lewis, Karen M; Gibson, Brad K; Pilkington, Kate

    2013-01-01

    Micron-sized stardust grains that originated in ancient stars are recovered from meteorites and analysed using high-resolution mass spectrometry. The most widely studied type of stardust is silicon carbide (SiC). Thousands of these grains have been analysed with high precision for their Si isotopic composition. Here we show that the distribution of the Si isotopic composition of the vast majority of stardust SiC grains carry the imprints of a spread in the age-metallicity distribution of their parent stars and of a power-law increase of the relative formation efficiency of SiC dust with the metallicity. This result offers a solution for the long-standing problem of silicon in stardust SiC grains, confirms the necessity of coupling chemistry and dynamics in simulations of the chemical evolution of our Galaxy, and constrains the modelling of dust condensation in stellar winds as function of the metallicity.

  12. Optical thermometry based on level anticrossing in silicon carbide.

    Science.gov (United States)

    Anisimov, A N; Simin, D; Soltamov, V A; Lebedev, S P; Baranov, P G; Astakhov, G V; Dyakonov, V

    2016-09-14

    We report a giant thermal shift of 2.1 MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences can be detected without application of radiofrequency fields, by simply monitoring the photoluminescence intensity in the vicinity of the level anticrossing. This effect results in an all-optical thermometry technique with temperature sensitivity of 100 mK/Hz(1/2) for a detection volume of approximately 10(-6) mm(3). In contrast, the zero-field splitting in the ground state does not reveal detectable temperature shift. Using these properties, an integrated magnetic field and temperature sensor can be implemented on the same center.

  13. Superconductivity in heavily boron-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

    2008-01-01

    Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

  14. DECODING THE MESSAGE FROM METEORITIC STARDUST SILICON CARBIDE GRAINS

    Energy Technology Data Exchange (ETDEWEB)

    Lewis, Karen M.; Lugaro, Maria; Gibson, Brad K.; Pilkington, Kate, E-mail: maria.lugaro@monash.edu, E-mail: karen.michelle.lewis@gmail.com, E-mail: bkgibson@uclan.ac.uk, E-mail: kpilkington@uclan.ac.uk [Monash Centre for Astrophysics (MoCA), Monash University, Clayton VIC 3800 (Australia)

    2013-05-01

    Micron-sized stardust grains that originated in ancient stars are recovered from meteorites and analyzed using high-resolution mass spectrometry. The most widely studied type of stardust is silicon carbide (SiC). Thousands of these grains have been analyzed with high precision for their Si isotopic composition. Here we show that the distribution of the Si isotopic composition of the vast majority of stardust SiC grains carries the imprints of a spread in the age-metallicity distribution of their parent stars and of a power-law increase of the relative formation efficiency of SiC dust with the metallicity. This result offers a solution for the long-standing problem of silicon in stardust SiC grains, confirms the necessity of coupling chemistry and dynamics in simulations of the chemical evolution of our Galaxy, and constrains the modeling of dust condensation in stellar winds as a function of the metallicity.

  15. Optical thermometry based on level anticrossing in silicon carbide

    Science.gov (United States)

    Anisimov, A. N.; Simin, D.; Soltamov, V. A.; Lebedev, S. P.; Baranov, P. G.; Astakhov, G. V.; Dyakonov, V.

    2016-09-01

    We report a giant thermal shift of 2.1 MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences can be detected without application of radiofrequency fields, by simply monitoring the photoluminescence intensity in the vicinity of the level anticrossing. This effect results in an all-optical thermometry technique with temperature sensitivity of 100 mK/Hz1/2 for a detection volume of approximately 10-6 mm3. In contrast, the zero-field splitting in the ground state does not reveal detectable temperature shift. Using these properties, an integrated magnetic field and temperature sensor can be implemented on the same center.

  16. Ion-beam modifications of mechanical and dimensional properties of silicon carbide

    Science.gov (United States)

    Costantini, Jean-Marc; Kerbiriou, Xavier; Sauzay, Maxime; Thomé, Lionel

    2012-11-01

    3C-SiC single crystal epitaxial layers, 6H-SiC single crystal plates and α-SiC Hexoloy sinters were irradiated with 4.0 MeV Xe or 4.0 MeV Au ions at room temperature. Mechanical and dimensional evolutions of silicon carbide are studied by means of nano-indentation and step-height measurements which are correlated with Rutherford backscattering spectrometry and channelling (RBS/C) data in single crystals. Irradiation with Xe ions induces a total lattice disorder related to amorphization for a fluence of 1 × 1015 cm-2 in both polytypes. When complete amorphization is reached, around the same values of Young's modulus (˜350 GPa) and Berkovich hardness (˜27 GPa) are found in both polytypes. The out-of-plane expansion increases with irradiation dose and the saturation value measured in the amorphous layer (normalized to the projected range of the ions) is close to 20-25%. Modifications of macroscopic properties are mainly governed by the disordered fraction of the material in a two-step damage process. A similar behaviour of material evolution is found for the cubic and hexagonal polytypes, either in single crystals or sintered polycrystalline samples. Calculations of Young's modulus and volume swelling are carried out using the analytical (Reuss and Voigt) models of homogenization.

  17. Development of the SOFIA silicon carbide secondary mirror

    Science.gov (United States)

    Fruit, Michel; Antoine, Pascal; Varin, Jean-Luc; Bittner, Hermann; Erdmann, Matthias

    2003-02-01

    The SOFIA telescope is ajoint NASA-DLR project for a 2.5 m airborne Stratospheric Observatory for IR Astronomy to be flown in a specially adapted Boeing 747 SP plane, Kayser-Threde being resopinsible for the development of the Telescope Optics. The φ 352 mm Secondary Mirror is mounted ona chopping mechanism to allow avoidance of background noise during IR observations. Stiffness associated to lightness is a major demand for such a mirror to achieve high frequency chopping. This leads to select SIlicon Carbide for the mirror blank. Its development has been run by the ASTRIUM/BOOSTEC joint venture SiCSPACE, taking full benefit of the instrinsic properties of the BOOSTEC SiC-100 sintered material, associated to qualified processes specifically developed for space borne mirrors by ASTRIUM. Achieved performances include a low mass of 1.97 kg, a very high stiffness with a first resonant frequency of 1865 Hz and a measured optical surface accuracy of 39 nm rms, using Ion Beam Figuring. It is proposed here to present the major design features of the SOFIA Secondary Mirror, highlighting the main advantages of using Silicon Carbide, the main steps of its development and the achieved optomechanical performances of the developed mirror.

  18. Stress envelope of silicon carbide composites at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Nozawa, Takashi, E-mail: nozawa.takashi67@jaea.go.jp [Japan Atomic Energy Agency, 2-166 Omotedate, Obuchi, Rokkasho, Aomori 039-3212 (Japan); Kim, Sunghun [Graduate School of Energy Science, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); Ozawa, Kazumi; Tanigawa, Hiroyasu [Japan Atomic Energy Agency, 2-166 Omotedate, Obuchi, Rokkasho, Aomori 039-3212 (Japan)

    2014-10-15

    To identify a comprehensive stress envelope, i.e., strength anisotropy map, of silicon carbide fiber-reinforced silicon carbide matrix composite (SiC/SiC composite) for practical component design, tensile and compressive tests were conducted using the small specimen test technique specifically tailored for high-temperature use. In-plane shear properties were, however, estimated using the off-axial tensile method and assuming that the mixed mode failure criterion, i.e., Tsai–Wu criterion, is valid for the composites. The preliminary test results indicate no significant degradation to either proportional limit stress (PLS) or fracture strength by tensile loading at temperatures below 1000 °C. A similarly good tolerance of compressive properties was identified at elevated temperatures, except for a slight degradation in PLS. With the high-temperature test data of tensile, compressive and in-plane shear properties, the stress envelopes at elevated temperatures were finally obtained. A slight reduction in the design limit was obvious at elevated temperatures when the compressive mode is dominant, whereas a negligibly small impact on the design is expected by considering the tensile loading case.

  19. High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

    Science.gov (United States)

    Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

    2015-01-01

    A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

  20. Cavity-Enhanced Measurements of Defect Spins in Silicon Carbide

    Science.gov (United States)

    Calusine, Greg; Politi, Alberto; Awschalom, David D.

    2016-07-01

    The identification of new solid-state defect-qubit candidates in widely used semiconductors has the potential to enable the use of nanofabricated devices for enhanced qubit measurement and control operations. In particular, the recent discovery of optically active spin states in silicon carbide thin films offers a scalable route for incorporating defect qubits into on-chip photonic devices. Here, we demonstrate the use of 3C silicon carbide photonic crystal cavities for enhanced excitation of color-center defect spin ensembles in order to increase measured photoluminescence signal count rates, optically detected magnetic-resonance signal intensities, and optical spin initialization rates. We observe an up to a factor of 30 increase in the photoluminescence and optically detected magnetic-resonance signals from Ky5 color centers excited by cavity-resonant excitation and increase the rate of ground-state spin initialization by approximately a factor of 2. Furthermore, we show that the 705-fold reduction in excitation mode volume and enhanced excitation and collection efficiencies provided by the structures can be used to overcome inhomogenous broadening in order to facilitate the study of defect-qubit subensemble properties. These results highlight some of the benefits that nanofabricated devices offer for engineering the local photonic environment of color-center defect qubits to enable applications in quantum information and sensing.

  1. Hydrogen adsorption in metal-decorated silicon carbide nanotubes

    Science.gov (United States)

    Singh, Ram Sevak; Solanki, Ankit

    2016-09-01

    Hydrogen storage for fuel cell is an active area of research and appropriate materials with excellent hydrogen adsorption properties are highly demanded. Nanotubes, having high surface to volume ratio, are promising storage materials for hydrogen. Recently, silicon carbide nanotubes have been predicted as potential materials for future hydrogen storage application, and studies in this area are ongoing. Here, we report a systematic study on hydrogen adsorption properties in metal (Pt, Ni and Al) decorated silicon carbide nanotubes (SiCNTs) using first principles calculations based on density functional theory. The hydrogen adsorption properties are investigated by calculations of adsorption energy, electronic band structure, density of states (DOS) and Mulliken charge population analysis. Our findings show that hydrogen adsorptions on Pt, Ni and Al-decorated SiCNTs undergo spontaneous exothermic reactions with significant modulation of electronic structure of SiCNTs in all cases. Importantly, according to the Mulliken charge population analysis, dipole-dipole interaction causes chemisorptions of hydrogen in Pt, Ni and Al decorated SiCNTs with formation of chemical bonds. The study is a platform for the development of metal decorated SiCNTs for hydrogen adsorption or hydrogen storage application.

  2. Development of refractory armored silicon carbide by infrared transient liquid phase processing

    Science.gov (United States)

    Hinoki, Tatsuya; Snead, Lance L.; Blue, Craig A.

    2005-12-01

    Tungsten (W) and molybdenum (Mo) were coated on silicon carbide (SiC) for use as a refractory armor using a high power plasma arc lamp at powers up to 23.5 MW/m 2 in an argon flow environment. Both tungsten powder and molybdenum powder melted and formed coating layers on silicon carbide within a few seconds. The effect of substrate pre-treatment (vapor deposition of titanium (Ti) and tungsten, and annealing) and sample heating conditions on microstructure of the coating and coating/substrate interface were investigated. The microstructure was observed by scanning electron microscopy (SEM) and optical microscopy (OM). The mechanical properties of the coated materials were evaluated by four-point flexural tests. A strong tungsten coating was successfully applied to the silicon carbide substrate. Tungsten vapor deposition and pre-heating at 5.2 MW/m 2 made for a refractory layer containing no cracks propagating into the silicon carbide substrate. The tungsten coating was formed without the thick reaction layer. For this study, small tungsten carbide grains were observed adjacent to the interface in all conditions. In addition, relatively large, widely scattered tungsten carbide grains and a eutectic structure of tungsten and silicon were observed through the thickness in the coatings formed at lower powers and longer heating times. The strength of the silicon carbide substrate was somewhat decreased as a result of the processing. Vapor deposition of tungsten prior to powder coating helped prevent this degradation. In contrast, molybdenum coating was more challenging than tungsten coating due to the larger coefficient of thermal expansion (CTE) mismatch as compared to tungsten and silicon carbide. From this work it is concluded that refractory armoring of silicon carbide by Infrared Transient Liquid Phase Processing is possible. The tungsten armored silicon carbide samples proved uniform, strong, and capable of withstanding thermal fatigue testing.

  3. Comprehensive modeling of ion-implant amorphization in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Mok, K.R.C. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain) and Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117576 (Singapore)]. E-mail: g0202446@nus.edu.sg; Jaraiz, M. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Martin-Bragado, I. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Synopsys, Karl-Hammerschmidt Strasse 34, D-85609 Aschheim/Dornach (Germany); Rubio, J.E. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Castrillo, P. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Pinacho, R. [Departamento de E. y Electronica, Universidad de Valladolid, ETSIT Campus Miguel Delibes, 47011 Valladolid (Spain); Srinivasan, M.P. [Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117576 (Singapore); Benistant, F. [Chartered Semiconductor Manufacturing. 60 Woodlands Industrial Park D, Street 2, Singapore 738406 (Singapore)

    2005-12-05

    A physically based model has been developed to simulate the ion-implant induced damage accumulation up to amorphization in silicon. Based on damage structures known as amorphous pockets (AP), which are three-dimensional, irregularly shaped agglomerates of interstitials (I) and vacancies (V) surrounded by crystalline silicon, the model is able to reproduce a wide range of experimental observations of damage accumulation and amorphization with interdependent implantation parameters. Instead of recrystallizing the I's and V's instantaneously, the recrystallization rate of an AP containing nI and mV is a function of its effective size, defined as min(n, m), irrespective of its internal spatial configuration. The parameters used in the model were calibrated using the experimental silicon amorphous-crystalline transition temperature as a function of dose rate for C, Si, and Ge. The model is able to show the superlinear damage build-up with dose, the extent of amorphous layer and the superadditivity effect of polyatomic ions.

  4. Ab initio modelling of boron related defects in amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Tiago A.; Torres, Vitor J.B. [Department of Physics, University of Aveiro, Campus Santiago, 3810-193 Aveiro (Portugal)

    2012-10-15

    We have modeled boron related point defects in amorphous silicon, using an ab initio method, the Density functional theory-pseudopotential code Aimpro. The boron atoms were embedded in 64 atom amorphous silicon cubic supercells. The calculations were performed using boron defects in 15 different supercells. These supercells were developed using a modified Wooten-Winer-Weaire bond switching mechanism. In average, the properties of the 15 supercells agree with the observed radial and bond angle distributions, as well the electronic and vibrational density of states and Raman spectra. In amorphous silicon it has been very hard to find real self-interstitials, since for almost all the tested configurations, the amorphous lattice relaxes overall. We found that substitutional boron prefers to be 4-fold coordinated. We find also an intrinsic hole-trap in the non-doped amorphous lattice, which may explain the low efficiency of boron doping. The local vibrational modes are, in average, higher than the correspondent crystalline values (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Applications of Silicon Carbide for High Temperature Electronics and Sensors

    Science.gov (United States)

    Shields, Virgil B.

    1995-01-01

    Silicon carbide (SiC) is a wide bandgap material that shows great promise in high-power and high temperature electronics applications because of its high thermal conductivity and high breakdown electrical field. The excellent physical and electronic properties of SiC allows the fabrication of devices that can operate at higher temperatures and power levels than devices produced from either silicon or GaAs. Although modern electronics depends primarily upon silicon based devices, this material is not capable of handling may special requirements. Devices which operate at high speeds, at high power levels and are to be used in extreme environments at high temperatures and high radiation levels need other materials with wider bandgaps than that of silicon. Many space and terrestrial applications also have a requirement for wide bandgap materials. SiC also has great potential for high power and frequency operation due to a high saturated drift velocity. The wide bandgap allows for unique optoelectronic applications, that include blue light emitting diodes and ultraviolet photodetectors. New areas involving gas sensing and telecommunications offer significant promise. Overall, the properties of SiC make it one of the best prospects for extending the capabilities and operational regimes of the current semiconductor device technology.

  6. Supercontinuum generation in hydrogenated amorphous silicon waveguides at telecommunication wavelengths.

    Science.gov (United States)

    Safioui, Jassem; Leo, François; Kuyken, Bart; Gorza, Simon-Pierre; Selvaraja, Shankar Kumar; Baets, Roel; Emplit, Philippe; Roelkens, Gunther; Massar, Serge

    2014-02-10

    We report supercontinuum (SC) generation centered on the telecommunication C-band (1550 nm) in CMOS compatible hydrogenated amorphous silicon waveguides. A broadening of more than 550 nm is obtained in 1cm long waveguides of different widths using as pump picosecond pulses with on chip peak power as low as 4 W.

  7. Nanoscale Transformations in Metastable, Amorphous, Silicon-Rich Silica.

    Science.gov (United States)

    Mehonic, Adnan; Buckwell, Mark; Montesi, Luca; Munde, Manveer Singh; Gao, David; Hudziak, Stephen; Chater, Richard J; Fearn, Sarah; McPhail, David; Bosman, Michel; Shluger, Alexander L; Kenyon, Anthony J

    2016-09-01

    Electrically biasing thin films of amorphous, substoichiometric silicon oxide drives surprisingly large structural changes, apparent as density variations, oxygen movement, and ultimately, emission of superoxide ions. Results from this fundamental study are directly relevant to materials that are increasingly used in a range of technologies, and demonstrate a surprising level of field-driven local reordering of a random oxide network.

  8. First-principles study of hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Jarolimek, K.; Groot, R.A. de; Wijs, G.A. de; Zeman, M.

    2009-01-01

    We use a molecular-dynamics simulation within density-functional theory to prepare realistic structures of hydrogenated amorphous silicon. The procedure consists of heating a crystalline structure of Si64H8 to 2370 K, creating a liquid and subsequently cooling it down to room temperature. The effect

  9. Development of a model of silicon carbide thermodestruction for preparation of graphite layers

    Science.gov (United States)

    Davydov, S. Yu.; Lebedev, A. A.; Smirnova, N. Yu.

    2009-03-01

    A three-stage scheme of the silicon carbide thermodestruction resulting in surface graphitization, which was proposed earlier (based on structural studies), is discussed. A theoretical analysis shows, however, that this process occurs in two stages, namely, thermodesorption of silicon atoms from the two outer Si-C bilayers followed by condensation of carbon atoms on the Si(0001) face of silicon carbide, thus giving rise to the formation of a two-dimensional graphite structure (graphene).

  10. Electron energy-loss spectroscopy study of hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Burnham, N.A.; Fisher, R.F.; Asher, S.E.; Kazmerski, L.L.

    1987-07-01

    Electron energy-loss spectroscopy is used to study hydrogenated amorphous silicon (a-Si:H). Core-level and plasma excitations were examined as a function of hydrogen content. This technique and its interpretation reveals a consistent picture of the electron excitations within this important material. The a-Si:H thin films were fabricated by rf sputtering. Their hydrogen concentrations ranged from 0% to 15%. Hydrogen content was determined by infrared spectroscopy and secondary ion mass spectroscopy. X-ray photoelectron spectroscopy and inspection of the silicon Auger-KLL peak confirmed the silicon core levels.

  11. [Synergetic effects of silicon carbide and molecular sieve loaded catalyst on microwave assisted catalytic oxidation of toluene].

    Science.gov (United States)

    Wang, Xiao-Hui; Bo, Long-Li; Liu, Hai-Nan; Zhang, Hao; Sun, Jian-Yu; Yang, Li; Cai, Li-Dong

    2013-06-01

    Molecular sieve loaded catalyst was prepared by impregnation method, microwave-absorbing material silicon carbide and the catalyst were investigated for catalytic oxidation of toluene by microwave irradiation. Research work examined effects of silicon carbide and molecular sieve loading Cu-V catalyst's mixture ratio as well as mixed approach changes on degradation of toluene, and characteristics of catalyst were measured through scanning electron microscope, specific surface area test and X-ray diffraction analysis. The result showed that the fixed bed reactor had advantages of both thermal storage property and low-temperature catalytic oxidation when 20% silicon carbide was filled at the bottom of the reactor, and this could effectively improve the utilization of microwave energy as well as catalytic oxidation efficiency of toluene. Under microwave power of 75 W and 47 W, complete-combustion temperatures of molecular sieve loaded Cu-V catalyst and Cu-V-Ce catalyst to toluene were 325 degrees C and 160 degrees C, respectively. Characteristics of the catalysts showed that mixture of rare-earth element Ce increased the dispersion of active components in the surface of catalyst, micropore structure of catalyst effectively guaranteed high adsorption capacity for toluene, while amorphous phase of Cu and V oxides increased the activity of catalyst greatly.

  12. Silicon nanoparticle optimization and integration into amorphous silicon via PECVD for use in photovoltaics

    Science.gov (United States)

    Klafehn, Grant W.

    An alternative approach to traditional growth methods of nanocrystalline material is co-deposition by injection of separately synthesized silicon nanoparticles into amorphous silicon. Current methods of co-deposition of silicon nanoparticles and amorphous silicon via plasma enhanced chemical vapor deposition allow the two reactors' pressures to affect each other, leading to either poor amorphous silicon quality or uncontrollable nanoparticle size and deposition rate. In this thesis, a technique for greater control of stand-alone silicon nanoparticle size and quality grown was achieved by using a slit nozzle. The nozzle was used to separate the nanoparticle and amorphous reactors, allowing for the ability to control nanoparticle size, crystallinity, and deposition rate during co-deposition, while still allowing for high quality amorphous silicon growth. Changing the width of the nozzle allowed for control of the size of the nanoparticles from 10 to 4.5 nm in diameter, and allowed for the precursor gas flow rate, and thus deposition rate, to be changed with only a 6 % change in size estimated from luminescence emission wavelength. Co-deposited samples were grown within a broad range of flow rates for the silicon nanoparticle precursor gas, resulting in each sample having a different crystal fraction. FTIR, PL, Raman, and XRD were used to analyze their composition. The silicon nanoparticle synthesis was separately optimized to control size and crystallinity, and the influence of the nanoparticle process gases on amorphous silicon growth was also explored. Finally, COMSOL simulations were performed to support and possibly predict Si-NP growth variables that pertain to Si-NP size.

  13. Size Dependence of Nanoscale Wear of Silicon Carbide.

    Science.gov (United States)

    Tangpatjaroen, Chaiyapat; Grierson, David; Shannon, Steve; Jakes, Joseph E; Szlufarska, Izabela

    2017-01-18

    Nanoscale, single-asperity wear of single-crystal silicon carbide (sc-SiC) and nanocrystalline silicon carbide (nc-SiC) is investigated using single-crystal diamond nanoindenter tips and nanocrystalline diamond atomic force microscopy (AFM) tips under dry conditions, and the wear behavior is compared to that of single-crystal silicon with both thin and thick native oxide layers. We discovered a transition in the relative wear resistance of the SiC samples compared to that of Si as a function of contact size. With larger nanoindenter tips (tip radius ≈ 370 nm), the wear resistances of both sc-SiC and nc-SiC are higher than that of Si. This result is expected from the Archard's equation because SiC is harder than Si. However, with the smaller AFM tips (tip radius ≈ 20 nm), the wear resistances of sc-SiC and nc-SiC are lower than that of Si, despite the fact that the contact pressures are comparable to those applied with the nanoindenter tips, and the plastic zones are well-developed in both sets of wear experiments. We attribute the decrease in the relative wear resistance of SiC compared to that of Si to a transition from a wear regime dominated by the materials' resistance to plastic deformation (i.e., hardness) to a regime dominated by the materials' resistance to interfacial shear. This conclusion is supported by our AFM studies of wearless friction, which reveal that the interfacial shear strength of SiC is higher than that of Si. The contributions of surface roughness and surface chemistry to differences in interfacial shear strength are also discussed.

  14. Novel Scheme of Amorphous/Crystalline Silicon Heterojunction Solar Cell

    Energy Technology Data Exchange (ETDEWEB)

    De Iuliis, S.; Geerligs, L.J. [ECN Solar Energy, Petten (Netherlands); Tucci, M.; Serenelli, L.; Salza, E. [ENEA Research Center Casaccia, Roma (Italy); De Cesare, G.; Caputo, D.; Ceccarelli, M. [University ' Sapienza' , Department of Electronic Engineering, Roma (Italy)

    2007-01-15

    In this paper we investigate in detail how the heterostructure concept can be implemented in an interdigitated back contact solar cell, in which both the emitters are formed on the back side of the c-Si wafer by amorphous/crystalline silicon heterostructure, and at the same time the grid-less front surface is passivated by a double layer of amorphous silicon and silicon nitride, which also provides an anti-reflection coating. The entire process, held at temperature below 300C, is photolithography-free, using a metallic self-aligned mask to create the interdigitated pattern, and we show that the alignment is feasible. An open-circuit voltage of 687 mV has been measured on a p-type monocrystalline silicon wafer. The mask-assisted deposition process does not influence the uniformity of the deposited amorphous silicon layers. Photocurrent limits factor has been investigated with the aid of one-dimensional modeling and quantum efficiency measurements. On the other hand several technological aspects that limit the fill factor and the short circuit current density still need improvements.

  15. Raman and ellipsometric characterization of hydrogenated amorphous silicon thin films

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Hydrogenated amorphous silicon (a-Si:H) thin films were deposited by plasma-enhanced vapor deposition (PECVD) at different silane temperatures (Tg) before glow-discharge. The effect of Tg on the amorphous network and optoelectronic properties of the films has been investigated by Raman scattering spectra, ellipsometric transmittance spectra, and dark conductivity measurement, respectively. The results show that the increase in Tg leads to an improved ordering of amorphous network on the short and intermediate scales and an increase of both refractive index and absorption coefficient in a-Si:H thin films. It is indicated that the dark conductivity increases by two orders of magnitude when Tg is raised from room temperature (RT) to 433 K. The continuous ordering of amorphous network of a-Si:H thin films deposited at a higher Tg is the main cause for the increase of dark conductivity.

  16. High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Schuttauf, J.A.; van der Werf, C.H.M.; Kielen, I.M.; van Sark, W.G.J.H.M.; Rath, J.K.

    2011-01-01

    We investigate the influence of thermal annealing on the passivation quality of crystalline silicon (c-Si) surfaces by intrinsic and n-type hydrogenated amorphous silicon (a-Si:H) films. For temperatures up to 255 C, we find an increase in surface passivation quality, corresponding to a decreased da

  17. Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

    DEFF Research Database (Denmark)

    Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

    2004-01-01

    Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

  18. Reaction-Based SiC Materials for Joining Silicon Carbide Composites for Fusion Energy

    Energy Technology Data Exchange (ETDEWEB)

    Lewinsohn, Charles A.; Jones, Russell H.; Singh, M.; Serizawa, H.; Katoh, Y.; Kohyama, A.

    2000-09-01

    The fabrication of large or complex silicon carbide-fiber-reinforced silicon carbide (SiC/SiC) components for fusion energy systems requires a method to assemble smaller components that are limited in size by manufacturing constraints. Previous analysis indicates that silicon carbide should be considered as candidate joint materials. Two methods to obtain SiC joints rely on a reaction between silicon and carbon to produce silicon carbide. This report summarizes preliminary mechanical properties of joints formed by these two methods. The methods appear to provide similar mechanical properties. Both the test methods and materials are preliminary in design and require further optimization. In an effort to determine how the mechanical test data is influenced by the test methodology and specimen size, plans for detailed finite element modeling (FEM) are presented.

  19. Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

    Science.gov (United States)

    Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

    2016-01-01

    Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

  20. TRANSFORMATIONS IN NANO-DIAMONDS WITH FORMATION OF NANO-POROUS SILICON CARBIDE AT HIGH PRESSURE

    Directory of Open Access Journals (Sweden)

    V. N. Kovalevsky

    2010-01-01

    Full Text Available The paper contains investigations on regularities of diamond - silicon carbide composite structure formation at impact-wave excitation. It has been determined that while squeezing a porous blank containing Si (SiC nano-diamond by explosive detonation products some processes are taking place such as diamond nano-particles consolidation, reverse diamond transition into graphite, fragments formation from silicon carbide. A method for obtaining high-porous composites with the presence of ultra-disperse diamond particles has been developed. Material with three-dimensional high-porous silicon-carbide structure has been received due to nano-diamond graphitation at impact wave transmission and plastic deformation. The paper reveals nano-diamonds inverse transformation into graphite and its subsequent interaction with the silicon accompanied by formation of silicon-carbide fragments with dimensions of up to 100 nm.

  1. Graphitic nanostripes in silicon carbide surfaces created by swift heavy ion irradiation.

    Science.gov (United States)

    Ochedowski, Oliver; Osmani, Orkhan; Schade, Martin; Bussmann, Benedict Kleine; Ban-d'Etat, Brigitte; Lebius, Henning; Schleberger, Marika

    2014-06-06

    The controlled creation of defects in silicon carbide represents a major challenge. A well-known and efficient tool for defect creation in dielectric materials is the irradiation with swift (E(kin) ≥ 500 keV/amu) heavy ions, which deposit a significant amount of their kinetic energy into the electronic system. However, in the case of silicon carbide, a significant defect creation by individual ions could hitherto not be achieved. Here we present experimental evidence that silicon carbide surfaces can be modified by individual swift heavy ions with an energy well below the proposed threshold if the irradiation takes place under oblique angles. Depending on the angle of incidence, these grooves can span several hundreds of nanometres. We show that our experimental data are fully compatible with the assumption that each ion induces the sublimation of silicon atoms along its trajectory, resulting in narrow graphitic grooves in the silicon carbide matrix.

  2. Methods of depositing an alpha-silicon-carbide-containing film at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Habermehl, Scott D.

    2017-01-17

    Described methods are useful for depositing a silicon carbide film including Alpha-SiC at low temperatures (e.g., below about 1400.degree. C.), and resulting multi-layer structures and devices. A method includes introducing a chlorinated hydrocarbon gas and a chlorosilicon gas into a reaction chamber, and reacting the chlorinated hydrocarbon gas with the chlorosilicon gas at a temperature of less than about 1400.degree. C. to grow the silicon carbide film. The silicon carbide film so-formed includes Alpha-SiC.

  3. Broadband antireflective silicon carbide surface produced by cost-effective method

    DEFF Research Database (Denmark)

    Argyraki, Aikaterini; Ou, Yiyu; Ou, Haiyan

    2013-01-01

    A cost-effective method for fabricating antireflective subwavelength structures on silicon carbide is demonstrated. The nanopatterning is performed in a 2-step process: aluminum deposition and reactive ion etching. The effect, of the deposited aluminum film thickness and the reactive ion etching...... conditions, on the average surface reflectance and nanostructure landscape have been investigated systematically. The average reflectance of silicon carbide surface is significantly suppressed from 25.4% to 0.05%, under the optimal experimental conditions, in the wavelength range of 390-784 nm. The presence...... of stochastic nanostructures also changes the wetting properties of silicon carbide surface from hydrophilic (47°) to hydrophobic (108°)....

  4. Silicon carbide-silicon as a support material for oxygen evolution reaction in PEM steam electrolysers

    DEFF Research Database (Denmark)

    Nikiforov, Aleksey; Petrushina, Irina; Christensen, Erik;

    , cyclic voltammetry, SEM, EDX and steady state electrochemical polarisation in a working PEM steam electrolyser. Several SiC-Si-IrO2 electrodes have been prepared and tested. The iridium oxide content at the electrode active layer varied from x=0.2 to x=1, corresponding to the general formula (1-x...... technique and the average particle diameter of silicon carbide-silicon was found to be in the range of 5-10 µm, while its specific surface area was about 5 sq.m/g. The oxygen evolution reaction was studied by the cyclic voltammetry technique in 85% phosphoric acid solution at temperatures between 22 and 150...

  5. A Novel Compact and Reliable Hybrid Silicon/Silicon Carbide Device Module for Efficient Power Conversion Project

    Data.gov (United States)

    National Aeronautics and Space Administration — United Silicon Carbide, Inc. proposes to develop a novel compact, efficient and high-temperature power module, based on unique co-packaging approach of normally-off...

  6. Analytical potential for atomistic simulations of silicon, carbon, and silicon carbide

    Science.gov (United States)

    Erhart, Paul; Albe, Karsten

    2005-01-01

    We present an analytical bond-order potential for silicon, carbon, and silicon carbide that has been optimized by a systematic fitting scheme. The functional form is adopted from a preceding work [Phys. Rev. B 65, 195124 (2002)] and is built on three independently fitted potentials for SiSi , CC , and SiC interaction. For elemental silicon and carbon, the potential perfectly reproduces elastic properties and agrees very well with first-principles results for high-pressure phases. The formation enthalpies of point defects are reasonably reproduced. In the case of silicon stuctural features of the melt agree nicely with data taken from literature. For silicon carbide the dimer as well as the solid phases B1, B2, and B3 were considered. Again, elastic properties are very well reproduced including internal relaxations under shear. Comparison with first-principles data on point defect formation enthalpies shows fair agreement. The successful validation of the potentials for configurations ranging from the molecular to the bulk regime indicates the transferability of the potential model and makes it a good choice for atomistic simulations that sample a large configuration space.

  7. CARBON REMOVAL FROM METALLIC SILICON BY CARBIDE SETTLING FOR SOLAR GRADE SILICON PRODUCTION

    Directory of Open Access Journals (Sweden)

    Tiago Ramos Ribeiro

    2015-03-01

    Full Text Available The use of solar energy is growing sharply in the past years. The most used material for solar cells is high-purity silicon produced by refining low-purity silicon. With the increasing demand for photovoltaic components, new refining processes have been investigated. Carbon is one of the impurities to be removed and one possible removing technique is based on the settling of silicon carbide particles. Settling tests were carried out at 1,500°C during one and six hours. Results show that differences in settling time do not affect carbon removal significantly and that the carbon contents after settling are still higher than that required by standards for solar grade silicon (43 ppm. Results from this work and from literature show that settling is not a feasible processing step for carbon removal to the level needed for photovoltaic applications.

  8. Method of Assembling a Silicon Carbide High Temperature Anemometer

    Science.gov (United States)

    Okojie, Robert S. (Inventor); Fralick, Gustave C. (Inventor); Saad, George J. (Inventor)

    2004-01-01

    A high temperature anemometer includes a pair of substrates. One of the substrates has a plurality of electrodes on a facing surface, while the other of the substrates has a sensor cavity on a facing surface. A sensor is received in the sensor cavity, wherein the sensor has a plurality of bondpads, and wherein the bondpads contact the plurality of electrodes when the facing surfaces are mated with one another. The anemometer further includes a plurality of plug-in pins, wherein the substrate with the cavity has a plurality of trenches with each one receiving a plurality of plug-in pins. The plurality of plug-in pins contact the plurality of electrodes when the substrates are mated with one another. The sensor cavity is at an end of one of the substrates such that the sensor partially extends from the substrate. The sensor and the substrates are preferably made of silicon carbide.

  9. Fluorescent silicon carbide materials for white LEDs and photovoltaics

    DEFF Research Database (Denmark)

    Syväjärvi, Mikael; Ou, Haiyan; Wellmann, Peter

    Energy efficient materials solutions will be key figures in progressive energy saving applications. We explore a materials growth concept of fluorescent wide bandgap semiconductors for white and infrared LEDs as well as solar cells. This is an emerging scientific field which has not previously been...... explored. The applications include a white LED for general lighting in which the conversion is based on the semiconductor instead of using phosphors. The result is an LED technology which does not need rare earth metals and has a pure white light. In efficient fluorescent materials, the absorption may...... the luminescence appears in the visible region which is used to produce a white LED with pure white light without need of phosphors [2]. The cubic silicon carbide polytype is challenging to master, and we have explored the growth of this crystal structure. It has a lower bandgap, and by a similar doping concept...

  10. High surface area silicon carbide-coated carbon aerogel

    Science.gov (United States)

    Worsley, Marcus A; Kuntz, Joshua D; Baumann, Theodore F; Satcher, Jr, Joe H

    2014-01-14

    A metal oxide-carbon composite includes a carbon aerogel with an oxide overcoat. The metal oxide-carbon composite is made by providing a carbon aerogel, immersing the carbon aerogel in a metal oxide sol under a vacuum, raising the carbon aerogel with the metal oxide sol to atmospheric pressure, curing the carbon aerogel with the metal oxide sol at room temperature, and drying the carbon aerogel with the metal oxide sol to produce the metal oxide-carbon composite. The step of providing a carbon aerogel can provide an activated carbon aerogel or provide a carbon aerogel with carbon nanotubes that make the carbon aerogel mechanically robust. Carbon aerogels can be coated with sol-gel silica and the silica can be converted to silicone carbide, improved the thermal stability of the carbon aerogel.

  11. The Effects of Metamorphism on Chondritic Diamond and Silicon Carbide

    Science.gov (United States)

    Russell, S. S.; Arden, J. W.; Pillinger, C. T.

    1992-07-01

    Presolar grains have now been studied in a considerable number of primitive meteorites so that it can be readily shown that the diamond/silicon carbide ratio is not constant (Fig. 1). To highlight some of the distinctions: the enstatite chondrite Indarch appears to be particularly enriched in SiC compared to its diamond content, whereas the CV3s are relatively SiC poor. The abundance of SiC content in CV3s, however, seems to depend strongly on the oxidation state; the highly oxidized Allende has much less SiC than the more reduced Vigarano. The differences seen in Fig. 1 imply either heterogeneity in the solar nebula, i.e., preferential inclusion of one of the components into different meteorite parent bodies or different destruction mechanisms for the two components. Alexander et al. (1990) and Huss (1990) noted that abundance of both diamond and silicon carbide in primitive chondritic meteorites declines with increasing petrologic type, perhaps indicating that these components are destroyed during metamorphism. In addition to the above observations, diamond and silicon carbide from different meteorite classes can be distinguished. The nitrogen content of the diamond varies considerably in a way that might be petrologic type dependent (Russell et al., 1991a). The combustion temperature of SiC in different samples is widely variable and the delta^13C measured for SiC from the CV3 meteorites is isotopically much lighter. The similarity in average delta^13C of SiC in the lowest petrologic type carbonaceous chondrites, Andrar 003 and Indarch (when it is known from ion probe studies that individual SiC grains are extraordinarily variable in ^12C/^13C), suggests that the interstellar mineral was well mixed in the parent body forming regions of the solar nebula (Russell et al., 1991b). Clearly understanding all these apparently unrelated facts is vital to unraveling the history of primitive parent bodies and their formation. Metamorphism must be involved after accretion

  12. Silicon carbide, a semiconductor for space power electronics

    Science.gov (United States)

    Powell, J. A.; Matus, Lawrence G.

    1991-01-01

    After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the area of crystal growth and device fabrication technology. High quality of single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

  13. Dispersion of nonresonant third-order nonlinearities in Silicon Carbide

    Science.gov (United States)

    De Leonardis, Francesco; Soref, Richard A.; Passaro, Vittorio M. N.

    2017-01-01

    In this paper we present a physical discussion of the indirect two-photon absorption (TPA) occuring in silicon carbide with either cubic or wurtzite structure. Phonon-electron interaction is analyzed by finding the phonon features involved in the process as depending upon the crystal symmetry. Consistent physical assumptions about the phonon-electron scattering mechanisms are proposed in order to give a mathematical formulation to predict the wavelength dispersion of TPA and the Kerr nonlinear refractive index n2. The TPA spectrum is investigated including the effects of band nonparabolicity and the influence of the continuum exciton. Moreover, a parametric analysis is presented in order to fit the experimental measurements. Finally, we have estimated the n2 in a large wavelength range spanning the visible to the mid-IR region. PMID:28098223

  14. Chemical, Electrical and Thermal Characterization of Nanoceramic Silicon Carbide

    Science.gov (United States)

    Martin, Hervie; Abunaemeh, Malek; Smith, Cydale; Muntele, Claudiu; Budak, Satilmish; Ila, Daryush

    2009-03-01

    Silicon carbide (SiC) is a lightweight high bandgap semiconductor material that can maintain dimensional and chemical stability in adverse environments and very high temperatures. These properties make it suitable for high temperature thermoelectric converters. At the Center for Irradiaton of Materials (CIM) we design, manufacture and fabricate nanoceramic SiC, and perform electrical, thermal and chemical characterization of the material using particle induced X-ray emission (PIXE), Rutherford backscattering spectroscopy (RBS), Seebeck coefficient, electrical conductivity, and thermal conductivity measurements to calculate its efficiency as a thermoelectric generator. We are looking to compare the electrical and thermal properties of SiC ceramics with some other materials used for the same purposes.

  15. Developments in silicon carbide for aircraft propulsion system applications

    Science.gov (United States)

    Przybylko, Stephen J.

    1993-06-01

    The physical and electrical properties of silicon carbide make it the foremost semiconductor material for high-temperature, radiation-resistant, and high-power electronic devices. These attributes make SiC particularly suitable for application to aircraft engines. Recent proof-of-concept efforts have verified SiC's potential. Field-effect transistors have shown high-temperature operating capability from 350 C to 650 C. JFETs, MOSFETs, and MESFETs have been fabricated. Ultraviolet photodiodes with high quantum efficiencies and extremely low dark currents have been fabricated and tested. Blue light-emitting diodes are for sale in production quantities as are one-inch diameter wafers. These developments have established a sufficient level of confidence to pursue the development of devices for aircraft-engine applications.

  16. Interferometric measurements of silicon carbide mirrors at liquid helium temperature

    Science.gov (United States)

    Robb, Paul N.; Huff, Lynn W.; Forney, Paul B.; Petrovsky, Gury T.; Ljubarsky, Sergey V.; Khimitch, Yuri P.

    1995-10-01

    This paper presents the results of interferometric tests of two silicon carbide mirrors tested at room temperature and 6 K. The first mirror has a spherical f/1.73 surface, a diameter of 170 mm, and is of solid, plano-concave construction. The other mirror, a plano measuring 308 mm by 210 mm, is of lightweighted, closed-back construction. The mirrors were manufactured by the Vavilov State Optical Institute, St. Petersburg, Russia, and were loaned to Lockheed for these tests. Optical tests on both mirrors were performed using the Lockheed cryogenic optical test facility at liquid helium temperature and a Zygo Mark II interferometer. There was no change in the surface figure of the mirrors, within the test uncertainty of approximately plus or minus 0.02 waves at 0.6328-micrometer wavelength.

  17. Catalytic synthesis of silicon carbide preceramic polymers: Polycarbosilanes

    Energy Technology Data Exchange (ETDEWEB)

    Berry, D.H.

    1992-10-01

    Polycarbosilanes are the most successful and widely studied class of polymer precursors for silicon carbide, but traditional methods for their synthesis are inefficient and nonselective. This project is focused on developing transition metal catalysts for the synthesis of polycarbosilanes and other preceramic polymers. In recent work we have developed the first homogeneous transition metal catalysts for the dehydrogenative coupling of simple alkyl silanes to oligomeric and polymeric carbosilanes, H-(SiR[sub 2]CR[prime][sub 2])n-SiR[sub 3]. The coupling of alkylgermanes, however, yields the corresponding oligomeric poly(germanes) (Ge-Ge). Future work will help elucidate the mechanisms of these catalytic process, explore the use of hydrogen acceptors as reaction accelerators, and develop new and more active catalysts.

  18. Dispersion of nonresonant third-order nonlinearities in Silicon Carbide

    Science.gov (United States)

    de Leonardis, Francesco; Soref, Richard A.; Passaro, Vittorio M. N.

    2017-01-01

    In this paper we present a physical discussion of the indirect two-photon absorption (TPA) occuring in silicon carbide with either cubic or wurtzite structure. Phonon-electron interaction is analyzed by finding the phonon features involved in the process as depending upon the crystal symmetry. Consistent physical assumptions about the phonon-electron scattering mechanisms are proposed in order to give a mathematical formulation to predict the wavelength dispersion of TPA and the Kerr nonlinear refractive index n2. The TPA spectrum is investigated including the effects of band nonparabolicity and the influence of the continuum exciton. Moreover, a parametric analysis is presented in order to fit the experimental measurements. Finally, we have estimated the n2 in a large wavelength range spanning the visible to the mid-IR region.

  19. Joining and Integration of Silicon Carbide for Turbine Engine Applications

    Science.gov (United States)

    Halbig, Michael C.; Singh, Mrityunjay; Coddington, Bryan; Asthana, Rajiv

    2010-01-01

    The critical need for ceramic joining and integration technologies is becoming better appreciated as the maturity level increases for turbine engine components fabricated from ceramic and ceramic matrix composite materials. Ceramic components offer higher operating temperatures and reduced cooling requirements. This translates into higher efficiencies and lower emissions. For fabricating complex shapes, diffusion bonding of silicon carbide (SiC) to SiC is being developed. For the integration of ceramic parts to the surrounding metallic engine system, brazing of SiC to metals is being developed. Overcoming the chemical, thermal, and mechanical incompatibilities between dissimilar materials is very challenging. This presentation will discuss the types of ceramic components being developed by researchers and industry and the benefits of using ceramic components. Also, the development of strong, crack-free, stable bonds will be discussed. The challenges and progress in developing joining and integration approaches for a specific application, i.e. a SiC injector, will be presented.

  20. Silicon carbide: a versatile material for biosensor applications.

    Science.gov (United States)

    Oliveros, Alexandra; Guiseppi-Elie, Anthony; Saddow, Stephen E

    2013-04-01

    Silicon carbide (SiC) has been around for more than 100 years as an industrial material and has found wide and varied applications because of its unique electrical and thermal properties. In recent years there has been increased attention to SiC as a viable material for biomedical applications. Of particular interest in this review is its potential for application as a biotransducer in biosensors. Among these applications are those where SiC is used as a substrate material, taking advantage of its surface chemical, tribological and electrical properties. In addition, its potential for integration as system on a chip and those applications where SiC is used as an active material make it a suitable substrate for micro-device fabrication. This review highlights the critical properties of SiC for application as a biosensor and reviews recent work reported on using SiC as an active or passive material in biotransducers and biosensors.

  1. Hydrothermal corrosion of silicon carbide joints without radiation

    Science.gov (United States)

    Koyanagi, Takaaki; Katoh, Yutai; Terrani, Kurt A.; Kim, Young-Jin; Kiggans, James O.; Hinoki, Tatsuya

    2016-12-01

    Hydrothermal corrosion of four types of the silicon carbide (SiC) to SiC plate joints were investigated under pressurized water reactor and boiling water reactor relevant chemical conditions without irradiation. The joints were formed by metal diffusion bonding using molybdenum or titanium interlayer, reaction sintering using Ti-Si-C system, and SiC nanopowder sintering. Most of the joints withstood the corrosion tests for five weeks. The recession of the SiC substrates was limited. Based on the recession of the bonding layers, it was concluded that all the joints except for the molybdenum diffusion bond are promising under the reducing environments without radiation. The SiC nanopowder sintered joint was the most corrosion tolerant under the oxidizing environment among the four joints.

  2. Joining of Silicon Carbide Through the Diffusion Bonding Approach

    Science.gov (United States)

    Halbig, Michael .; Singh, Mrityunjay

    2009-01-01

    In order for ceramics to be fully utilized as components for high-temperature and structural applications, joining and integration methods are needed. Such methods will allow for the fabrication the complex shapes and also allow for insertion of the ceramic component into a system that may have different adjacent materials. Monolithic silicon carbide (SiC) is a ceramic material of focus due to its high temperature strength and stability. Titanium foils were used as an interlayer to form diffusion bonds between chemical vapor deposited (CVD) SiC ceramics with the aid of hot pressing. The influence of such variables as interlayer thickness and processing time were investigated to see which conditions contributed to bonds that were well adhered and crack free. Optical microscopy, scanning electron microscopy, and electron microprobe analysis were used to characterize the bonds and to identify the reaction formed phases.

  3. A review on single photon sources in silicon carbide

    Science.gov (United States)

    Lohrmann, A.; Johnson, B. C.; McCallum, J. C.; Castelletto, S.

    2017-03-01

    This paper summarizes key findings in single-photon generation from deep level defects in silicon carbide (SiC) and highlights the significance of these individually addressable centers for emerging quantum applications. Single photon emission from various defect centers in both bulk and nanostructured SiC are discussed as well as their formation and possible integration into optical and electrical devices. The related measurement protocols, the building blocks of quantum communication and computation network architectures in solid state systems, are also summarized. This includes experimental methodologies developed for spin control of different paramagnetic defects, including the measurement of spin coherence times. Well established doping, and micro- and nanofabrication procedures for SiC may allow the quantum properties of paramagnetic defects to be electrically and mechanically controlled efficiently. The integration of single defects into SiC devices is crucial for applications in quantum technologies and we will review progress in this direction.

  4. Application of silicon carbide to synchrotron-radiation mirrors

    Energy Technology Data Exchange (ETDEWEB)

    Takacs, P.Z.; Hursman, T.L.; Williams, J.T.

    1983-09-01

    Damage to conventional mirror materials exposed to the harsh synchrotron radiation (SR) environment has prompted the SR user community to search for more suitable materials. Next-generation insertion devices, with their attendant flux increases, will make the problem of mirror design even more difficult. A parallel effort in searching for better materials has been underway within the laser community for several years. The technology for dealing with high thermal loads is highly developed among laser manufacturers. Performance requirements for laser heat exchangers are remarkably similar to SR mirror requirements. We report on the application of laser heat exchanger technology to the solution of typical SR mirror design problems. The superior performance of silicon carbide for laser applications is illustrated by various material trades studies, and its superior performance for SR applications is illustrated by means of model calculations.

  5. Preparation of porous silicon carbide by combustion synthesis

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yu-min; ZHANG Jian-han; HAN Jie-cai

    2005-01-01

    Porous silicon carbide ceramics were prepared by combustion synthesis technique. SiC/TiC composite was gained by combustion reaction of Si, C and Ti. Thermodynamics analysis of Si-C-Ti system indicates that the content of TiC in products should be larger than 30%. The experimental results show that the content of Ti+C should be larger than 25% to achieve a complete combustion reaction. The X-ray diffractometry results show that the final products with a relative density of 45%-64% are composed of α-SiC, β-SiC, TiC and a small quantity of Si. The images of scanning electron microscopy show that the structures of grain in SiC based porous ceramics consist of particles with a few microns in size.

  6. High Strength Silicon Carbide Foams and Their Deformation Behavior

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Silicon carbide (SiC) foams with a continuously connected open-cell structure were prepared and characterized for their mechanical performance. The apparent densities of SiC foams were controlled between about 0.4 and 1.3 g/cm3, with corresponding compressive strengths ranging from about 13 to 60 MPa and flexural strengths from about 8 to 30 MPa. Compressive testing of the SiC foams yielded stress-strain curves with only one linear-elastic region, which is different from those reported on ceramic foams in literature. This can possibly be attributed to the existence of filaments with fine, dense and high strength microstructures. The SiC and the filaments respond homogeneously to applied loading.

  7. Light-induced metastable structural changes in hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Fritzsche, H. [Univ. of Chicago, IL (United States)

    1996-09-01

    Light-induced defects (LID) in hydrogenated amorphous silicon (a-Si:H) and its alloys limit the ultimate efficiency of solar panels made with these materials. This paper reviews a variety of attempts to find the origin of and to eliminate the processes that give rise to LIDs. These attempts include novel deposition processes and the reduction of impurities. Material improvements achieved over the past decade are associated more with the material`s microstructure than with eliminating LIDs. We conclude that metastable LIDs are a natural by-product of structural changes which are generally associated with non-radiative electron-hole recombination in amorphous semiconductors.

  8. Pyrolytic transformation from polydihydrosilane to hydrogenated amorphous silicon film

    Energy Technology Data Exchange (ETDEWEB)

    Masuda, Takashi, E-mail: mtakashi@jaist.ac.jp [Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-13 Asahidai, Nomi, Ishikawa, 923-1211 (Japan); Matsuki, Yasuo [Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-13 Asahidai, Nomi, Ishikawa, 923-1211 (Japan); Yokkaichi Research Center, JSR Corporation, 100 Kawajiri-cho, Yokkaichi, Mie, 510-8552 (Japan); Shimoda, Tatsuya [Japan Science and Technology Agency, ERATO, Shimoda Nano-Liquid Process Project, 2-13 Asahidai, Nomi, Ishikawa, 923-1211 (Japan); School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292 (Japan)

    2012-08-31

    The fabrication of thin film silicon devices based on solution processes rather than on conventional vacuum processes is of substantial interest since cost reductions may result. Using a solution process, we coated substrates with polydihydrosilane solution and studied the pyrolytic transformation of the material into hydrogenated amorphous silicon (a-Si:H). From thermal gravimetry and differential thermal analysis data a significant reduction in weight of the material and a construction of Si-Si bonds are concluded for the pyrolysis temperature T{sub p} = 270 to 360 Degree-Sign C. The appearance of amorphous silicon phonon bands in Raman spectra for films prepared at T{sub p} {>=} 330 Degree-Sign C suggests the construction of a three-dimensional amorphous silicon network. Films prepared at T{sub p} {>=} 360 Degree-Sign C exhibit a hydrogen content near 10 at.% and an optical gap near 1.6 eV similar to device-grade vacuum processed a-Si:H. However, the infrared microstructure factor, the spin density, and the photosensitivity require significant improvements. - Highlights: Black-Right-Pointing-Pointer We fabricate hydrogenated amorphous silicon (a-Si:H) films by a solution process. Black-Right-Pointing-Pointer The a-Si:H films are prepared by pyrolytic transformation in polysilane solution. Black-Right-Pointing-Pointer We investigate basic properties in relation to the pyrolysis temperature. Black-Right-Pointing-Pointer Raman spectra, hydrogen content, and optical gap are similar to device-grade a-Si:H. Black-Right-Pointing-Pointer Microstructure factor, spin density, and photoconductivity show poor quality.

  9. Advanced Measurements of Silicon Carbide Ceramic Matrix Composites

    Energy Technology Data Exchange (ETDEWEB)

    Farhad Farzbod; Stephen J. Reese; Zilong Hua; Marat Khafizov; David H. Hurley

    2012-08-01

    Silicon carbide (SiC) is being considered as a fuel cladding material for accident tolerant fuel under the Light Water Reactor Sustainability (LWRS) Program sponsored by the Nuclear Energy Division of the Department of Energy. Silicon carbide has many potential advantages over traditional zirconium based cladding systems. These include high melting point, low susceptibility to corrosion, and low degradation of mechanical properties under neutron irradiation. In addition, ceramic matrix composites (CMCs) made from SiC have high mechanical toughness enabling these materials to withstand thermal and mechanical shock loading. However, many of the fundamental mechanical and thermal properties of SiC CMCs depend strongly on the fabrication process. As a result, extrapolating current materials science databases for these materials to nuclear applications is not possible. The “Advanced Measurements” work package under the LWRS fuels pathway is tasked with the development of measurement techniques that can characterize fundamental thermal and mechanical properties of SiC CMCs. An emphasis is being placed on development of characterization tools that can used for examination of fresh as well as irradiated samples. The work discuss in this report can be divided into two broad categories. The first involves the development of laser ultrasonic techniques to measure the elastic and yield properties and the second involves the development of laser-based techniques to measurement thermal transport properties. Emphasis has been placed on understanding the anisotropic and heterogeneous nature of SiC CMCs in regards to thermal and mechanical properties. The material properties characterized within this work package will be used as validation of advanced materials physics models of SiC CMCs developed under the LWRS fuels pathway. In addition, it is envisioned that similar measurement techniques can be used to provide process control and quality assurance as well as measurement of

  10. Investigation on the Effects of Titanium Diboride Particle Size on Radiation Shielding Properties of Titanium Diboride Reinforced Boron Carbide-Silicon Carbide Composites

    Directory of Open Access Journals (Sweden)

    A.O. Addemir

    2012-03-01

    Full Text Available Composite materials have wide application areas in industry. Boron Carbide is an important material for nuclear technology. Silicon carbide is a candidate material in the first wall and blankets of fusion power plants. Titanium diboride reinforced boron carbide-silicon carbide composites which were produced from different titanium diboride particle sizes and ratios were studied for searching of the behaviour against the gamma ray. Cs-137 gamma radioisotope was used as gamma source in the experiments which has a single gamma-peak at 0.662 MeV. Gamma transmission technique was used for the measurements. The effects of titanium diboride particle size on radiation attenuation of titanium diboride reinforced boron carbide-silicon carbide composites were evaluated in related with gamma transmission and the results of the experiments were interpreted and compared with each other. Composite materials have wide application areas in industry. Boron Carbide is an important material for nuclear technology. Silicon carbide is a candidate material in the first wall and blankets of fusion power plants. Titanium diboride reinforced boron carbide-silicon carbide composites which were produced from different titanium diboride particle sizes and ratios were studied for searching of the behaviour against the gamma ray. Cs-137 gamma radioisotope was used as gamma source in the experiments which has a single gamma-peak at 0.662 MeV. Gamma transmission technique was used for the measurements. The effects of titanium diboride particle size on radiation attenuation of titanium diboride reinforced boron carbide-silicon carbide composites were evaluated in related with gamma transmission and the results of the experiments were interpreted and compared with each other. Composite materials have wide application areas in industry. Boron Carbide is an important material for nuclear technology. Silicon carbide is a candidate material in the first wall and blankets of fusion

  11. Low-Cost, Silicon Carbide Replication Technique for LWIR Mirror Fabrication Project

    Data.gov (United States)

    National Aeronautics and Space Administration — SSG proposes an innovative optical manufacturing approach that will enable the low-cost fabrication of lightweighted, Long Wave Infrared (LWIR) Silicon Carbide (SiC)...

  12. The First JFET-Based Silicon Carbide Active Pixel Sensor UV Imager Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Solar-blind ultraviolet (UV) imaging is needed in the fields of astronomy, national defense, and bio-chemistry. United Silicon Carbide, Inc. proposes to develop a...

  13. Friction and wear behavior of single-crystal silicon carbide in sliding contact with various metals

    Science.gov (United States)

    Miyoshi, K.; Buckley, D. H.

    1978-01-01

    Sliding friction experiments were conducted with single-crystal silicon carbide in contact with various metals. Results indicate the coefficient of friction is related to the relative chemical activity of the metals. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to silicon carbide. The chemical activity of the metal and its shear modulus may play important roles in metal-transfer, the form of the wear debris and the surface roughness of the metal wear scar. The more active the metal, and the less resistance to shear, the greater the transfer to silicon carbide and the rougher the wear scar on the surface of the metal. Hexagon-shaped cracking and fracturing formed by cleavage of both prismatic and basal planes is observed on the silicon carbide surface.

  14. Ultra-Lightweight, High Efficiency Silicon-Carbide (SIC) Based Power Electronic Converters Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In Phase I of this project, APEI, Inc. proved the feasibility of creating ultra-lightweight power converters (utilizing now emerging silicon carbide [SiC] power...

  15. Novel Silicon Carbide Deep Ultraviolet Detectors: Device Modeling, Characterization, Design and Prototyping Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Silicon Carbide deep UV detectors can achieve large gains, high signal-to-noise ratios and solar-blind operation, with added benefits of smaller sizes, lower...

  16. Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Optical Physics Company (OPC) has developed new silicon carbide (SiC) foam-based optics with hybrid skins that are composite, athermal and lightweight (FOCAL) that...

  17. Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Optical Physics Company (OPC) proposes to manufacture new silicon carbide (SiC) foam-based optics that are composite, athermal and lightweight (FOCAL) that provide...

  18. CHARACTERIZATION OF PRECIPITATES IN CUBIC SILICON CARBIDE IMPLANTED WITH 25Mg+ IONS

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Weilin; Spurgeon, Steven R.; Liu, Jia; Edwards, Danny J.; Schreiber, Daniel K.; Henager, Charles H.; Kurtz, Richard J.; Wang, Yongqiang

    2016-09-26

    The aim of this study is to characterize precipitates in Mg+ ion implanted and high-temperature annealed cubic silicon carbide using scanning transmission electron microscopy, electron energy loss spectroscopy and atom probe tomography.

  19. Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation

    Science.gov (United States)

    Šimonka, Vito; Nawratil, Georg; Hössinger, Andreas; Weinbub, Josef; Selberherr, Siegfried

    2017-02-01

    We investigate anisotropical and geometrical aspects of hexagonal structures of Silicon Carbide and propose a direction dependent interpolation method for oxidation growth rates. We compute three-dimensional oxidation rates and perform one-, two-, and three-dimensional simulations for 4H- and 6H-Silicon Carbide thermal oxidation. The rates of oxidation are computed according to the four known growth rate values for the Si- (0 0 0 1) , a- (1 1 2 bar 0) , m- (1 1 bar 0 0) , and C-face (0 0 0 1 bar) . The simulations are based on the proposed interpolation method together with available thermal oxidation models. We additionally analyze the temperature dependence of Silicon Carbide oxidation rates for different crystal faces using Arrhenius plots. The proposed interpolation method is an essential step towards highly accurate three-dimensional oxide growth simulations which help to better understand the anisotropic nature and oxidation mechanism of Silicon Carbide.

  20. Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) Power Processing Unit (PPU) for Hall Effect...

  1. The First JFET-based Silicon Carbide Active Pixel Sensor UV Imager Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Solar-blind ultraviolet (UV) imaging is critically important in the fields of space astronomy, national defense, and bio-chemistry. United Silicon Carbide, Inc....

  2. The Affordable Pre-Finishing of Silicon Carbide for Optical Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Creare proposes to develop a novel, laser-assisted, pre-finishing process for chemical vapor deposition (CVD) coated silicon-carbide ceramics. Our innovation will...

  3. Excimer laser crystallization of amorphous silicon on metallic substrate

    Science.gov (United States)

    Delachat, F.; Antoni, F.; Slaoui, A.; Cayron, C.; Ducros, C.; Lerat, J.-F.; Emeraud, T.; Negru, R.; Huet, K.; Reydet, P.-L.

    2013-06-01

    An attempt has been made to achieve the crystallization of silicon thin film on metallic foils by long pulse duration excimer laser processing. Amorphous silicon thin films (100 nm) were deposited by radiofrequency magnetron sputtering on a commercial metallic alloy (N42-FeNi made of 41 % of Ni) coated by a tantalum nitride (TaN) layer. The TaN coating acts as a barrier layer, preventing the diffusion of metallic impurities in the silicon thin film during the laser annealing. An energy density threshold of 0.3 J cm-2, necessary for surface melting and crystallization of the amorphous silicon, was predicted by a numerical simulation of laser-induced phase transitions and witnessed by Raman analysis. Beyond this fluence, the melt depth increases with the intensification of energy density. A complete crystallization of the layer is achieved for an energy density of 0.9 J cm-2. Scanning electron microscopy unveils the nanostructuring of the silicon after laser irradiation, while cross-sectional transmission electron microscopy reveals the crystallites' columnar growth.

  4. Rapid fabrication of a silicon modification layer on silicon carbide substrate.

    Science.gov (United States)

    Bai, Yang; Li, Longxiang; Xue, Donglin; Zhang, Xuejun

    2016-08-01

    We develop a kind of magnetorheological (MR) polishing fluid for the fabrication of a silicon modification layer on a silicon carbide substrate based on chemical theory and actual polishing requirements. The effect of abrasive concentration in MR polishing fluid on material removal rate and removal function shape is investigated. We conclude that material removal rate will increase and tends to peak value as the abrasive concentration increases to 0.3 vol. %, and the removal function profile will become steep, which is a disadvantage to surface frequency error removal at the same time. The removal function stability is also studied and the results show that the prepared MR polishing fluid can satisfy actual fabrication requirements. An aspheric reflective mirror of silicon carbide modified by silicon is well polished by combining magnetorheological finishing (MRF) using two types of MR polishing fluid and computer controlled optical surfacing (CCOS) processes. The surface accuracy root mean square (RMS) is improved from 0.087λ(λ=632.8  nm) initially to 0.020λ(λ=632.8  nm) in 5.5 h total and the tool marks resulting from MRF are negligible. The PSD analysis results also shows that the final surface is uniformly polished.

  5. High thermal conductivity of a hydrogenated amorphous silicon film.

    Science.gov (United States)

    Liu, Xiao; Feldman, J L; Cahill, D G; Crandall, R S; Bernstein, N; Photiadis, D M; Mehl, M J; Papaconstantopoulos, D A

    2009-01-23

    We measured the thermal conductivity kappa of an 80 microm thick hydrogenated amorphous silicon film prepared by hot-wire chemical-vapor deposition with the 3omega (80-300 K) and the time-domain thermo-reflectance (300 K) methods. The kappa is higher than any of the previous temperature dependent measurements and shows a strong phonon mean free path dependence. We also applied a Kubo based theory using a tight-binding method on three 1000 atom continuous random network models. The theory gives higher kappa for more ordered models, but not high enough to explain our results, even after extrapolating to lower frequencies with a Boltzmann approach. Our results show that this material is more ordered than any amorphous silicon previously studied.

  6. The reliability and stability of multijunction amorphous silicon PV modules

    Energy Technology Data Exchange (ETDEWEB)

    Carlson, D.E. [Solarex, Newtown, PA (United States)

    1995-11-01

    Solarex is developing a manufacturing process for the commercial production of 8 ft{sup 2} multijunction amorphous silicon (a-Si) PV modules starting in 1996. The device structure used in these multijunction modules is: glass/textured tin oxide/p-i-n/p-i-n/ZnO/Al/EVA/Tedlar where the back junction of the tandem structure contains an amorphous silicon germanium alloy. As an interim step, 4 ft{sup 2} multijunction modules have been fabricated in a pilot production mode over the last several months. The distribution of initial conversion efficiencies for an engineering run of 67 modules (4 ft{sup 2}) is shown. Measurements recently performed at NREL indicate that the actual efficiencies are about 5% higher than those shown, and thus exhibit an average initial conversion efficiency of about 9.5%. The data indicates that the process is relatively robust since there were no modules with initial efficiencies less than 7.5%.

  7. Electrochemical degradation of amorphous-silicon photovoltaic modules

    Science.gov (United States)

    Mon, G. R.; Ross, R. G., Jr.

    Techniques of module electrochemical corrosion research, developed during reliability studies of crystalline-silicon modules (C-Si), have been applied to this new investigation into amorphous-silicon (a-Si) module reliability. Amorphous-Si cells, encapsulated in the polymers polyvinyl butyral (PVB) and ethylene vinyl acetate (EVA), were exposed for more than 1200 hours in a controlled 85 C/85 percent RH environment, with a constant 500 volts applied between the cells and an aluminum frame. Plotting power output reduction versus charge transferred reveals that about 50 percent a-Si cell failures can be expected with the passage of 0.1 to 1.0 Coulomb/cm of cell-frame edge length; this threshold is somewhat less than that determined for C-Si modules.

  8. Infrared electroabsorption spectra in amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lyou, J.H.; Schiff, E.A.; Hegedus, S.S.; Guha, S.; Yang, J.

    1999-07-01

    The authors report measurements of the infrared spectrum detected by modulating the reverse-bias voltage across amorphous silicon pin solar cells and Schottky barrier diodes. They find a band with a peak energy of 0.8 eV. The existence of this band has not, to their knowledge, been reported previously. The strength of the infrared band depends linearly upon applied bias, as opposed to the quadratic dependence for interband electroabsorption in amorphous silicon. The band's peak energy agrees fairly well with the known optical transition energies for dangling bond defects, but the linear dependence on bias and the magnitude of the signal are surprising if interpreted using an analogy to interband electroabsorption. A model based on absorption by defects near the n/i interface of the diodes accounts well for the infrared spectrum.

  9. Atomistic explanation of shear-induced amorphous band formation in boron carbide.

    Science.gov (United States)

    An, Qi; Goddard, William A; Cheng, Tao

    2014-08-29

    Boron carbide (B4C) is very hard, but its applications are hindered by stress-induced amorphous band formation. To explain this behavior, we used density function theory (Perdew-Burke-Ernzerhof flavor) to examine the response to shear along 11 plausible slip systems. We found that the (0111)/ slip system has the lowest shear strength (consistent with previous experimental studies) and that this slip leads to a unique plastic deformation before failure in which a boron-carbon bond between neighboring icosahedral clusters breaks to form a carbon lone pair (Lewis base) on the C within the icosahedron. Further shear then leads this Lewis base C to form a new bond with the Lewis acidic B in the middle of a CBC chain. This then initiates destruction of this icosahedron. The result is the amorphous structure observed experimentally. We suggest how this insight could be used to strengthen B4C.

  10. Amorphous SiC layers for electrically conductive Rugate filters in silicon based solar cells

    Science.gov (United States)

    Janz, S.; Peters, M.; Künle, M.; Gradmann, R.; Suwito, D.

    2010-05-01

    The subject of this work is the development of an electrically conductive Rugate filter for photovoltaic applications. We think that the optical as well as the electrical performance of the filter can be adapted especially to the requirements of crystalline Si thin-film and amorphous/crystalline silicon tandem solar cells. We have deposited amorphous hydrogenated Silicon Carbide layers (a-SixC1-x:H) with the precursor gases methane (CH4), silane (SiH4) and diborane (B2H6) applying Plasma Enhanced Chemical Vapour Deposition (PECVD). Through changing just the precursor flows a floating refractive index n from 1.9 to 3.5 (at 633 nm) could be achieved quite accurately. Different complex layer stacks (up to 200 layers) with a sinusoidal refractive index variation normal to the incident light were deposited in just 80 min on 100x100 mm2. Transmission measurements show good agreement between simulation and experiment which proofs our ability to control the deposition process, the good knowledge of the optical behaviour of the different SiC single layers and the advanced stage of our simulation model. The doped single layers show lateral conductivities which were extremely dependent on the Si/C ratio.

  11. Amorphous silicon based p-i-i-n photodetectors for point-of-care testing

    Energy Technology Data Exchange (ETDEWEB)

    Furin, Dominik; Proll, Guenther; Gauglitz, Guenther [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, 72076 Tuebingen (Germany); Thielmann, Johannes; Harendt, Christine [Institut fuer Mikroelektronik Stuttgart, Allmandring 30a, 70569 Stuttgart (Germany); Pfaefflin, Albrecht; Schleicher, Erwin [Universitaetsklinikum und Medizinische Fakultaet, Universitaetsklinikum Tuebingen, Geissweg 3, 72076 Tuebingen (Germany); Schubert, Markus B. [Institut fuer Physikalische Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany); Saemann, Marc

    2010-04-15

    Modern medical diagnostics demands point-of-care testing (POCT) systems for quick tests in clinical or out-patient environments. This investigation combines the Reflectometric Interference Spectroscopy (RIfS) with thin film technology for a highly sensitive, direct optical and label-free detection of proteins, e.g. inflammation or cardiovascular markers. Amorphous silicon (a-Si) based thin film photodetectors replace the so far needed spectrometer and permit downsizing of the POCT system. Photodetectors with p-i-i-n structure adjust their spectral sensitivity according to the applied read-out voltage. The use of amorphous silicon carbide in the p-type and the first intrinsic layer enhances the sensitivity through very low dark currents of the photodetectors and enables the adjustment of their absorption characteristics. Integrating the thin film photodetectors on the rear side of the RIfS substrate eliminates optical losses and distortions, as compared to the standard RIfS setup. An integrated Application Specific Integrated Circuit (ASIC) chip performs a current-frequency conversion to accurately detect the photocurrent of up to eight parallel photodetector channels. In addition to the optimization of the photo-detectors, this contribution presents first successful direct optical and label-free RIfS measurements of C-reactive protein (CRP) and D-dimer in buffer solution in physiological relevant concentrations. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Toward a Kinetic Model of Silicon Carbide Condensation in Type II Supernovae

    Science.gov (United States)

    Deneault, Ethan A. N.

    2017-01-01

    One of the most interesting types of dust grain extracted from terrestrial meteorites is the silicon carbide X-grain (SiC-X). These grains bear distinct isotopic signatures which classify them as supernova condensates, but their formation within the ejecta has not been well-studied. Using a kinetic chemistry network, we investigate possible pathways that lead to the formation of silicon carbide grains in the cooling outflows of type II supernovae.

  13. Application of Reaction-Bonded Silicon Carbide in Manufacturing of Spacecraft Combustion Chamber

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Silicon carbide (SiC) ceramics is a good structural ceramics material, which have a lot of excellent properties such as superior high-temperature strength up to a temperature of 1 350 ℃, chemical stability, good resistance to thermal shock and high abrasion resistance. The silicon carbide ceramics material has so far been used widely for manufacturing various components such as heat exchangers, rolls, rockets combustion chamber. Sintering of ceramics structural parts have many technological method, the reac...

  14. Synthesis and investigation of silicon carbide nanowires by HFCVD method

    Indian Academy of Sciences (India)

    S H MORTAZAVI; M GHORANNEVISS; M DADASHBABA; R ALIPOUR

    2016-08-01

    Silicon carbide (SiC) nanowire has been fabricated by hot filament chemical vapour deposition (HFCVD) mechanism in the temperature range of 600–800$^{\\circ}$C. Synthesis is performed under vacuum in the atmospheres of hexamethyldisiloxane/alcohol (HMDSO/C2H5OH) vapour and hydrogen (H$_2$) gas mixture. In this research dependence of SiC properties on temperature is discussed. Morphology and structural properties of SiC nanowire grown on glass substrate were characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), energy diffraction spectrometer (EDX), and four-point probe (4PP). Also Mountains Map Premium (64-bit version)software is used to investigate morphological features of samples. In this context, the analysis of the motifs, depth histograms, statistical parameters, texture direction, fractal, and the peak count histograms of the nanostructuresurface of samples are carried out. According to analysis, SiC films had a good crystal quality without defects or low residual stress. We found that increasing substrate temperature increases silicon and oxygen doping amount. We also found that electrical resistivity and surface roughness increased by increasing substrate temperature. This study showed that SiC nanowires with high density grew on the free catalyst glass substrate, and the alignment of SiC nanowires decreased.

  15. Evolution of the potential-energy surface of amorphous silicon

    OpenAIRE

    Kallel, Houssem; Mousseau, Normand; Schiettekatte, François

    2010-01-01

    The link between the energy surface of bulk systems and their dynamical properties is generally difficult to establish. Using the activation-relaxation technique (ART nouveau), we follow the change in the barrier distribution of a model of amorphous silicon as a function of the degree of relaxation. We find that while the barrier-height distribution, calculated from the initial minimum, is a unique function that depends only on the level of distribution, the reverse-barrier height distributio...

  16. Amorphous Silicon 16—bit Array Photodetector①

    Institute of Scientific and Technical Information of China (English)

    ZHANGShaoqiang; XUZhongyang; 等

    1997-01-01

    An amorphous silicon 16-bit array photodetector with the a-SiC/a-Si heterojunction diode is presented.The fabrication processes of the device were studied systematically.By the optimum of the diode structure and the preparation procedures,the diode with Id<10-12A/mm2 and photocurrentIp≥0.35A/W has been obtained at the wavelength of 632nm.

  17. Parallel microwave chemistry in silicon carbide reactor platforms: an in-depth investigation into heating characteristics.

    Science.gov (United States)

    Damm, Markus; Kappe, C Oliver

    2009-11-01

    The heating behavior of silicon carbide reaction platforms under 2.45 GHz microwave irradiation was investigated with the aid of online thermoimaging cameras and multiple-channel fiber-optic probe temperature sensors placed inside the wells/vials of the silicon carbide microtiter plates. Microwave irradiation leads to a rapid and homogeneous heating of the entire plate, with minimal deviations in the temperature recorded at different positions of the plate or inside the wells. In temperature-controlled experiments using dedicated multimode reactors, solvents with different microwave absorption characteristics can be heated in parallel in individual wells/vials of the silicon carbide plate reaching the same set temperature. Due to the large heat capacity and high thermal conductivity of silicon carbide, the plates are able to moderate any field inhomogeneities inside a microwave cavity. Although the heating of the plates can be performed extremely efficiently inside a microwave reactor, heating and synthetic applications can alternatively be carried out by applying conventional conductive heating of the silicon carbide plates on a standard hotplate. Due to the slower heating of the silicon carbide material under these conditions, somewhat longer reaction times will be required.

  18. Optical characterization and density of states determination of silicon nanocrystals embedded in amorphous silicon based matrix

    Science.gov (United States)

    van Sebille, M.; Vasudevan, R. A.; Lancee, R. J.; van Swaaij, R. A. C. M. M.; Zeman, M.

    2015-08-01

    We present a non-destructive measurement and simple analysis method for obtaining the absorption coefficient of silicon nanocrystals (NCs) embedded in an amorphous matrix. This method enables us to pinpoint the contribution of silicon NCs to the absorption spectrum of NC containing films. The density of states (DOS) of the amorphous matrix is modelled using the standard model for amorphous silicon while the NCs are modelled using one Gaussian distribution for the occupied states and one for the unoccupied states. For laser annealed a-Si0.66O0.34:H films, our analysis shows a reduction of the NC band gap from approximately 2.34-2.08 eV indicating larger mean NC size for increasing annealing laser fluences, accompanied by a reduction in NC DOS distribution width from 0.28-0.26 eV, indicating a narrower size distribution.

  19. Two-phase electrochemical lithiation in amorphous silicon.

    Science.gov (United States)

    Wang, Jiang Wei; He, Yu; Fan, Feifei; Liu, Xiao Hua; Xia, Shuman; Liu, Yang; Harris, C Thomas; Li, Hong; Huang, Jian Yu; Mao, Scott X; Zhu, Ting

    2013-02-13

    Lithium-ion batteries have revolutionized portable electronics and will be a key to electrifying transport vehicles and delivering renewable electricity. Amorphous silicon (a-Si) is being intensively studied as a high-capacity anode material for next-generation lithium-ion batteries. Its lithiation has been widely thought to occur through a single-phase mechanism with gentle Li profiles, thus offering a significant potential for mitigating pulverization and capacity fade. Here, we discover a surprising two-phase process of electrochemical lithiation in a-Si by using in situ transmission electron microscopy. The lithiation occurs by the movement of a sharp phase boundary between the a-Si reactant and an amorphous Li(x)Si (a-Li(x)Si, x ~ 2.5) product. Such a striking amorphous-amorphous interface exists until the remaining a-Si is consumed. Then a second step of lithiation sets in without a visible interface, resulting in the final product of a-Li(x)Si (x ~ 3.75). We show that the two-phase lithiation can be the fundamental mechanism underpinning the anomalous morphological change of microfabricated a-Si electrodes, i.e., from a disk shape to a dome shape. Our results represent a significant step toward the understanding of the electrochemically driven reaction and degradation in amorphous materials, which is critical to the development of microstructurally stable electrodes for high-performance lithium-ion batteries.

  20. A study of the applicability of gallium arsenide and silicon carbide as aerospace sensor materials

    Science.gov (United States)

    Hurley, John S.

    1990-01-01

    Most of the piezoresistive sensors, to date, are made of silicon and germanium. Unfortunately, such materials are severly restricted in high temperature environments. By comparing the effects of temperature on the impurity concentrations and piezoresistive coefficients of silicon, gallium arsenide, and silicon carbide, it is being determined if gallium arsenide and silicon carbide are better suited materials for piezoresistive sensors in high temperature environments. The results show that the melting point for gallium arsenide prevents it from solely being used in high temperature situations, however, when used in the alloy Al(x)Ga(1-x)As, not only the advantage of the wider energy band gas is obtained, but also the higher desire melting temperature. Silicon carbide, with its wide energy band gap and higher melting temperature suggests promise as a high temperature piezoresistive sensor.

  1. Synthesis of silicon carbide fibers from polycarbosilane by electrospinning method

    Science.gov (United States)

    Yue, Yuan

    Silicon carbide (SiC) is widely used in many fields due to its unique properties. Bulk SiC normally has a flexural strength of 500 -- 550 MPa, a Vickers hardness of ~27 GPa, a Young's modulus of 380 -- 430 GPa, and a thermal conductivity of approximately 120 W/mK. SiC fibers are of great interest since they are the good candidates for reinforcing ceramic matrix composites (CMCs) because of the weavability and high temperature strength of about two to three GPa at about 1000 °C. Silicon carbide fibers have been synthesized from polycarbosilane (PCS) with ~25 μm diameter using the melt-spinning method, followed by the curing and pyrolysis. In order to fabricate SiC fibers with small diameters, electrospinning method has been studied. The electrospinning technique is notable in that the fiber diameters can be controlled over a scale of nanometers to micrometers by controlling the processing parameters. However, there have only been limited studies of synthesis of silicon carbide fibers from polycarbosilane by electrospinning method. Moreover, there is no previous report for tensile strength testing of SiC fibers synthesized by electrospinning. The main objectives of this thesis are to study these problems. In this study, SiC fibers were obtained from polycarbosilane solutions using electrospinning method. In these solutions, dimethylformamide (DMF) and xylene were used as the solvents. The spinnability of the solutions was studied at different polycarbosilane concentrations, as were the ratios between DMF and xylene. The influence of electrospinning parameters such as voltage, flow rate and volume ratio of solvent on fiber diameter were studied. It was found that a minimal DMF content was ii required for the solutions to be spinnable for each PCS concentration. However, DMF content could not exceed 40% of the solvent volume, otherwise PCS could not be dissolved. The fiber diameters increased with increasing flow rate, and slightly decreased with increasing applied

  2. Surface bioactivity of plasma implanted silicon and amorphous carbon

    Institute of Scientific and Technical Information of China (English)

    Paul K CHU

    2004-01-01

    Plasma immersion ion implantation and deposition (PⅢ&D) has been shown to be an effective technique to enhance the surface bioactivity of materials. In this paper, recent progress made in our laboratory on plasma surface modification single-crystal silicon and amorphous carbon is reviewed. Silicon is the most important material in the integrated circuit industry but its surface biocompatibility has not been investigated in details. We have recently performed hydrogen PⅢ into silicon and observed the biomimetic growth of apatite on its surface in simulated body fluid. Diamond-like carbon (DLC) is widely used in the industry due to its excellent mechanical properties and chemical inertness. The use of this material in biomedical engineering has also attracted much attention. It has been observed in our laboratory that doping DLC with nitrogen by means of PⅢ can improve the surface blood compatibility. The properties as well as in vitro biological test results will be discussed in this article.

  3. Growth model of lantern-like amorphous silicon oxide nanowires

    Science.gov (United States)

    Wu, Ping; Zou, Xingquan; Chi, Lingfei; Li, Qiang; Xiao, Tan

    2007-03-01

    Silicon oxide nanowire assemblies with lantern-like morphology were synthesized by thermal evaporation of the mixed powder of SnO2 and active carbon at 1000 °C and using the silicon wafer as substrate and source. The nano-lanterns were characterized by a scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), energy-dispersive spectroscope (EDS) and selective area electron diffraction (SAED). The results show that the nano-lantern has symmetrical morphology, with one end connecting with the silicon wafer and the other end being the tin ball. The diameter of the nano-lantern is about 1.5-3.0 µm. Arc silicon oxide nanowire assemblies between the two ends have diameters ranging from 70 to 150 nm. One single catalyst tin ball catalyzes more than one amorphous nanowires' growth. In addition, the growth mechanism of the nano-lantern is discussed and a growth model is proposed. The multi-nucleation sites round the Sn droplet's perimeter are responsible for the formation of many SiOx nanowires. The growing direction of the nanowires is not in the same direction of the movement of the catalyst tin ball, resulting in the bending of the nanowires and forming the lantern-like silicon oxide morphology. The controllable synthesis of the lantern-like silicon oxide nanostructure may have potential applications in the photoelectronic devices field.

  4. Growth model of lantern-like amorphous silicon oxide nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wu Ping; Zou Xingquan; Chi Lingfei; Li Qiang; Xiao Tan [Department of Physics, Shantou University, Shantou 515063 (China)

    2007-03-28

    Silicon oxide nanowire assemblies with lantern-like morphology were synthesized by thermal evaporation of the mixed powder of SnO{sub 2} and active carbon at 1000 deg. C and using the silicon wafer as substrate and source. The nano-lanterns were characterized by a scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), energy-dispersive spectroscope (EDS) and selective area electron diffraction (SAED). The results show that the nano-lantern has symmetrical morphology, with one end connecting with the silicon wafer and the other end being the tin ball. The diameter of the nano-lantern is about 1.5-3.0 {mu}m. Arc silicon oxide nanowire assemblies between the two ends have diameters ranging from 70 to 150 nm. One single catalyst tin ball catalyzes more than one amorphous nanowires' growth. In addition, the growth mechanism of the nano-lantern is discussed and a growth model is proposed. The multi-nucleation sites round the Sn droplet's perimeter are responsible for the formation of many SiO{sub x} nanowires. The growing direction of the nanowires is not in the same direction of the movement of the catalyst tin ball, resulting in the bending of the nanowires and forming the lantern-like silicon oxide morphology. The controllable synthesis of the lantern-like silicon oxide nanostructure may have potential applications in the photoelectronic devices field.

  5. Silicon carbide-free graphene growth on silicon for lithium-ion battery with high volumetric energy density.

    Science.gov (United States)

    Son, In Hyuk; Hwan Park, Jong; Kwon, Soonchul; Park, Seongyong; Rümmeli, Mark H; Bachmatiuk, Alicja; Song, Hyun Jae; Ku, Junhwan; Choi, Jang Wook; Choi, Jae-Man; Doo, Seok-Gwang; Chang, Hyuk

    2015-06-25

    Silicon is receiving discernable attention as an active material for next generation lithium-ion battery anodes because of its unparalleled gravimetric capacity. However, the large volume change of silicon over charge-discharge cycles weakens its competitiveness in the volumetric energy density and cycle life. Here we report direct graphene growth over silicon nanoparticles without silicon carbide formation. The graphene layers anchored onto the silicon surface accommodate the volume expansion of silicon via a sliding process between adjacent graphene layers. When paired with a commercial lithium cobalt oxide cathode, the silicon carbide-free graphene coating allows the full cell to reach volumetric energy densities of 972 and 700 Wh l(-1) at first and 200th cycle, respectively, 1.8 and 1.5 times higher than those of current commercial lithium-ion batteries. This observation suggests that two-dimensional layered structure of graphene and its silicon carbide-free integration with silicon can serve as a prototype in advancing silicon anodes to commercially viable technology.

  6. Methods of quantum chemistry and nanotechnology as applied to the study of the energy states of amorphous tetrahedral structures

    Directory of Open Access Journals (Sweden)

    B. A. Golodenko

    2013-01-01

    Full Text Available The technique and results of an experimental research of power conditions of amorphous alloy hydrogenated carbide silicon is described. Application of power spectra of a silicon valence zone for definition phase structure of its amorphous hydrogenated carbide is shown. Quantitative dependence of a share carbide phases of silicon in structure of its alloy from the maintenance of methane in an initial gas mix is established.

  7. Enhanced crystallization of amorphous silicon thin films using embedded silicon nanocrystals

    Science.gov (United States)

    Anderson, Curtis Michael

    This thesis is concerned with the production of silicon thin films for photovoltaic applications. Much research has been carried out to find a stable, more efficient alternative to amorphous silicon, resulting in a number of various amorphous/crystalline mixed-phase film structures with properties superior to amorphous silicon. This thesis work details a completely new approach to mixed-phase film deposition, focusing on the fast crystallization of these films. The deposition of amorphous silicon films with embedded nanocrystals was carried out via a dual-plasma system. It is known that plasma conditions to produce high quality films are much different from those to produce particles. Hence the experimental system used here involved two separate plasmas to allow the optimum production of the crystalline nanoparticles and the amorphous film. Both plasmas use 13.56 MHz excitation voltage with diluted silane as the silicon precursor. The nanoparticle production reactor is a flow-through device that can be altered to control the size of the particles from around 5--30 nm average diameter. The film production reactor is a parallel-plate capacitively-coupled plasma system, into which the aerosol-suspended nanoparticles were injected. The nanocrystals could either be "co-deposited" simultaneously with the amorphous film, or be deposited separately in a layer-by-layer technique; both approaches are discussed in detail. Measurements of the film conductivity provide for the first time unambiguous evidence that the presence of nanocrystallites above 5 nm in the amorphous film have a direct impact on the electronic properties of co-deposited films. Further measurements of the film structure by transmission electron microscopy (TEM) and Raman spectroscopy demonstrate clearly the effect of embedded nanocrystals on the annealed crystallization process; the immediate growth of the crystal seeds has been observed. Additionally, a newly discovered mechanism of film crystallization

  8. Interference filter with amorphous silicon layer and direct laser recording on it

    Science.gov (United States)

    Kutanov, A.; Sydyk uluu, Nurbek; Snimshikov, I.; Kazakbaeva, Z.

    2016-08-01

    The interference spectral filters with amorphous silicon layer deposited by magnetron sputtering on the reflective metal layer on a glass substrate are developed. Interference filter select from white light source components corresponding to quasimonochromatic wavelength with a narrow bandwidth. The thickness of the amorphous silicon layer determines the center wavelength of the pass band of the filter. It proposed to use interference filter with amorphous silicon layer for direct laser recoding on it. Results on direct laser recording on amorphous silicon layer of the interference filter by single-mode Blu Ray laser (X = 405 nm) with high contrast reflected image are demonstrated.

  9. A silicon carbide room-temperature single-photon source

    Science.gov (United States)

    Castelletto, S.; Johnson, B. C.; Ivády, V.; Stavrias, N.; Umeda, T.; Gali, A.; Ohshima, T.

    2014-02-01

    Over the past few years, single-photon generation has been realized in numerous systems: single molecules, quantum dots, diamond colour centres and others. The generation and detection of single photons play a central role in the experimental foundation of quantum mechanics and measurement theory. An efficient and high-quality single-photon source is needed to implement quantum key distribution, quantum repeaters and photonic quantum information processing. Here we report the identification and formation of ultrabright, room-temperature, photostable single-photon sources in a device-friendly material, silicon carbide (SiC). The source is composed of an intrinsic defect, known as the carbon antisite-vacancy pair, created by carefully optimized electron irradiation and annealing of ultrapure SiC. An extreme brightness (2×106 counts s-1) resulting from polarization rules and a high quantum efficiency is obtained in the bulk without resorting to the use of a cavity or plasmonic structure. This may benefit future integrated quantum photonic devices.

  10. EUV nanosecond laser ablation of silicon carbide, tungsten and molybdenum

    Science.gov (United States)

    Frolov, Oleksandr; Kolacek, Karel; Schmidt, Jiri; Straus, Jaroslav; Choukourov, Andrei; Kasuya, Koichi

    2015-09-01

    In this paper we present results of study interaction of nanosecond EUV laser pulses at wavelength of 46.9 nm with silicon carbide (SiC), tungsten (W) and molybdenum (Mo). As a source of laser radiation was used discharge-plasma driver CAPEX (CAPillary EXperiment) based on high current capillary discharge in argon. The laser beam is focused with a spherical Si/Sc multilayer-coated mirror on samples. Experimental study has been performed with 1, 5, 10, 20 and 50 laser pulses ablation of SiC, W and Mo at various fluence values. Firstly, sample surface modification in the nanosecond time scale have been registered by optical microscope. And the secondly, laser beam footprints on the samples have been analyzed by atomic-force microscope (AFM). This work supported by the Czech Science Foundation under Contract GA14-29772S and by the Grant Agency of the Ministry of Education, Youth and Sports of the Czech Republic under Contract LG13029.

  11. MAGNESIUM PRECIPITATION AND DIFUSSION IN Mg+ ION IMPLANTED SILICON CARBIDE

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Weilin; Jung, Hee Joon; Kovarik, Libor; Wang, Zhaoying; Roosendaal, Timothy J.; Zhu, Zihua; Edwards, Danny J.; Hu, Shenyang Y.; Henager, Charles H.; Kurtz, Richard J.; Wang, Yongqiang

    2015-03-02

    As a candidate material for fusion reactor applications, silicon carbide (SiC) undergoes transmutation reactions under high-energy neutron irradiation with magnesium as the major metallic transmutant; the others include aluminum, beryllium and phosphorus in addition to helium and hydrogen gaseous species. Calculations by Sawan et al. predict that at a dose of ~100 dpa (displacements per atom), there is ~0.5 at.% Mg generated in SiC. The impact of these transmutants on SiC structural stability is currently unknown. This study uses ion implantation to introduce Mg into SiC. Multiaxial ion-channeling analysis of the as-produced damage state indicates a lower dechanneling yield observed along the <100> axis. The microstructure of the annealed sample was examined using high-resolution scanning transmission electron microscopy. The results show a high concentration of likely non-faulted tetrahedral voids and possible stacking fault tetrahedra near the damage peak. In addition to lattice distortion, dislocations and intrinsic and extrinsic stacking faults are also observed. Magnesium in 3C–SiC prefers to substitute for Si and it forms precipitates of cubic Mg2Si and tetragonal MgC2. The diffusion coefficient of Mg in 3C–SiC single crystal at 1573 K has been determined to be 3.8 ± 0.4E-19 m2/s.

  12. Modal acoustic emission source determination in silicon carbide matrix composites

    Science.gov (United States)

    Morscher, G. N.

    2000-05-01

    Modal acoustic emission has been used to monitor damage accumulation in woven silicon carbide (SiC) fiber reinforced SiC matrix composites during tensile testing. There are several potential sources of damage in these systems including transverse matrix cracking, fiber/matrix interphase debonding and sliding, longitudinal cracks in between plies, and fiber breakage. In the past, it has been shown that modal AE is excellent at detecting when damage occurs and subsides, where the damage occurs along the length of the sample, and the loss in material stiffness as a consequence of damage accumulation. The next step is to determine the extent that modal AE can be used to identify specific physical sources. This study will discuss the status of this aim for this composite system. Individual events were analyzed and correlated to specific sources based on the characteristics of the received waveforms, e.g., frequency spectrum and energy, and when the event occurred during the stress-history of the tensile test. Post-test microstructural examination of the test specimens enabled some correlation between specific types of AE events and damage sources.

  13. Silicon carbide as a basis for spaceflight optical systems

    Science.gov (United States)

    Curcio, Michael E.

    1994-09-01

    New advances in the areas of microelectronics and micro-mechanical devices have created a momentum in the development of lightweight, miniaturized, electro-optical space subsystems. The performance improvements achieved and new observational techniques developed as a result, have provided a basis for a new range of Small Explorer, Discovery-class and other low-cost mission concepts for space exploration. However, the ultimate objective of low-mass, inexpensive space science missions will only be achieved with a companion development in the areas of flight optical systems and sensor instrument benches. Silicon carbide (SiC) is currently emerging as an attractive technology to fill this need. As a material basis for reflective, flight telescopes and optical benches, SiC offers: the lightweight and stiffness characteristics of beryllium; glass-like inherent stability consistent with performance to levels of diffraction-limited visible resolution; superior thermal properties down to cryogenic temperatures; and an existing, commercially-based material and processing infrastructure like aluminum. This paper will describe the current status and results of on-going technology developments to utilize these material properties in the creation of lightweight, high- performing, thermally robust, flight optical assemblies. System concepts to be discussed range from an 18 cm aperture, 4-mirror, off-axis system weighing less than 2 kg to a 0.5 m, 15 kg reimager. In addition, results in the development of a thermally-stable, `GOES-like' scan mirror will be presented.

  14. Processes and applications of silicon carbide nanocomposite fibers

    Energy Technology Data Exchange (ETDEWEB)

    Shin, D G; Cho, K Y; Riu, D H [Nanomaterials Team, Korea Institute of Ceramic Engineering and Technology, 233-5 Gasan-dong, Guemcheon-gu, Seoul 153-801 (Korea, Republic of); Jin, E J, E-mail: dhriu15@seoultech.ac.kr [Battelle-Korea Laborotary, Korea University, Anamdong, Seongbuk-gu, Seoul (Korea, Republic of)

    2011-10-29

    Various types of SiC such as nanowires, thin films, foam, and continuous fibers have been developed since the early 1980s, and their applications have been expanded into several new applications, such as for gas-fueled radiation heater, diesel particulate filter (DPF), ceramic fiber separators and catalyst/catalyst supports include for the military, aerospace, automobile and electronics industries. For these new applications, high specific surface area is demanded and it has been tried by reducing the diameter of SiC fiber. Furthermore, functional nanocomposites show potentials in various harsh environmental applications. In this study, silicon carbide fiber was prepared through electrospinning of the polycarbosilane (PCS) with optimum molecular weight distribution which was synthesized by new method adopting solid acid catalyst such as ZSM-5 and {gamma}-Al{sub 2}O{sub 3}. Functional elements such as aluminum, titanium, tungsten and palladium easily doped in the precursor fiber and remained in the SiC fiber after pyrolysis. The uniform SiC fibers were produced at the condition of spinning voltage over 20 kV from the PCS solution as the concentration of 1.3 g/ml in DMF/Toluene (3:7) and pyrolysis at 1200deg. C. Pyrolyzed products were processed into several interesting applications such as thermal batteries, hydrogen sensors and gas filters.

  15. Synthesis of silicon carbide by carbothermal reduction of silica

    Energy Technology Data Exchange (ETDEWEB)

    Abel, J.L.; Ambrozio, F.; Beneduce, F. [Centro Universitario FEI, Itajuba, MG (Brazil); Instituto de Pesquisas Tecnologicas (IPT), Sao Paulo, SP (Brazil)

    2009-07-01

    Full text: The production of silicon carbide (SiC) in an industrial scale still by carbothermal reduction of silica for its synthesis. This study aims to identify, in a comparative way, among the common reducers like petroleum coke, carbon black, charcoal and graphite the carbothermal reduction of silica from peat or organic soil. It is shown that peat, also occurs in nature together with high purity silica sand deposits, where the proximity of raw materials and their quality are key elements that determine the type, purity and cost of production of SiC. Tests were running from samples produced in the electric resistance furnace with controlled atmosphere at temperatures of 1550 deg C, 1600°C and 1650°C, both the precursors and products of reaction of carbothermal reduction were characterized by applying techniques of X-ray diffraction, scanning electron microscopy (SEM) and Energy- Dispersive X-ray analysis Spectroscopy (EDS). The results showed the formation of SiC for all common reducers, as well as for peat, but it was not possible to realize clearly the difference between them, being necessary, specific tests. (author)

  16. Solution growth of silicon carbide using unary chromium solvent

    Science.gov (United States)

    Miyasaka, Ryo; Kawanishi, Sakiko; Narumi, Taka; Sasaki, Hideaki; Yoshikawa, Takeshi; Maeda, Masafumi

    2017-02-01

    Solution growth of silicon carbide (SiC) using unary chromium (Cr) solvent was studied because the system enables a high solubility difference and a low degree of supersaturation, which would lead to rapid growth with a stabilized growth interface. The liquidus composition at SiC saturation in a quasi-binary Cr-SiC system was studied at 1823-2173 K. The measured carbon (C) contents are in good agreement with the thermodynamic evaluation using the sub-regular solution model. In addition, growth experiments using a unary Cr solvent were performed by the bottom-seeded travelling solvent method. The obtained growth rates at 1803-1923 K with a temperature difference of 15-70 K were proportional to the solubility difference between the seed and source temperatures, indicating that the growth was controlled by the mass transfer of C in the solution. The maximum growth rate of 720 μm/h at 1803 K was much higher than the growth rate by Si-rich solvents, suggesting that the Cr-rich solvent is suitable for the rapid growth at a low temperature.

  17. High Temperature Dynamic Pressure Measurements Using Silicon Carbide Pressure Sensors

    Science.gov (United States)

    Okojie, Robert S.; Meredith, Roger D.; Chang, Clarence T.; Savrun, Ender

    2014-01-01

    Un-cooled, MEMS-based silicon carbide (SiC) static pressure sensors were used for the first time to measure pressure perturbations at temperatures as high as 600 C during laboratory characterization, and subsequently evaluated in a combustor rig operated under various engine conditions to extract the frequencies that are associated with thermoacoustic instabilities. One SiC sensor was placed directly in the flow stream of the combustor rig while a benchmark commercial water-cooled piezoceramic dynamic pressure transducer was co-located axially but kept some distance away from the hot flow stream. In the combustor rig test, the SiC sensor detected thermoacoustic instabilities across a range of engine operating conditions, amplitude magnitude as low as 0.5 psi at 585 C, in good agreement with the benchmark piezoceramic sensor. The SiC sensor experienced low signal to noise ratio at higher temperature, primarily due to the fact that it was a static sensor with low sensitivity.

  18. Silicon carbide DC-DC multilevel Cuk converter

    Science.gov (United States)

    Almalaq, Yasser; Alateeq, Ayoob; Matin, Mohammad

    2016-09-01

    In this paper, DC-DC multilevel cuk converter using silicon carbide (SiC) Components is presented. Cuk converter gives output voltage with negative polarity. This topology is useful for applications require high gain with limitation on duty cycle. The gain of the design can be enhanced by increasing the number of multiplier level (N). This relation between the gain and the number of levels is the major advantage of this multilevel cuk converter. In the proposed cuk converter, a single SiC MOSFET, 2N-1 SiC schottky diodes, 2N capacitors, 2 inductors, and single input voltage are used to supply a load with negative polarity. 300V input voltage, 50KHz switching frequency, and 75% duty cycle are the main parameters used in the design. The output parameters are 3KW power and -5.7 KV voltage. Because this design can be used in applications which temperature plays a critical role, the relation between increasing temperature and output voltage and power are tested. The design is simulated using LTspice software and the results are discussed.

  19. Porous Silicon Carbide/Carbon Composite Microspherules for Methane Storage

    Institute of Scientific and Technical Information of China (English)

    Fengbo Li; Qingli Qian; Shufeng Zhang; Fang Yan; Guoqing Yuan

    2007-01-01

    Porous silicon carbide/carbon (SiC/C) microspherules were prepared by the controlled heating treatment of polymer and silica hybrid precursors over 1000 ℃ in Ar/H2 stream. The resultant SiC/C composite shows improved physical properties such as excellent mechanical strength, regular physical form, and high packing density. Such improvement overcomes the main inherent problems encountered when using activated carbons as absorbents without sacrificing porosity properties. N2 sorption analysis shows that the SiC/C composite has a BET surface area of 1793 m2/g and a pore volume of 0.92 ml/g. Methane adsorption isotherm is determined by the conventional volumetric method at 25 ℃ and up to 7.0 MPa. On volumetric basis, the SiC/C composite microspherules show methane storage of 145 (V/V) at 3.5 MPa and 25 ℃. The combination of excellent physical properties and porosity properties in this SiC/C composite lends a great possibility to develop a competitive storage system for natural gas.

  20. Selective laser sintering of polymer-coated silicon carbide powders

    Energy Technology Data Exchange (ETDEWEB)

    Nelson, J.C.; Vail, N.K.; Barlow, J.W.; Beaman, J.J.; Bourell, D.L.; Marcus, H.L. [Univ. of Texas, Austin, TX (United States)

    1995-05-01

    Selective Laser Sintering (SLS) produces three-dimensional objects directly from a computer-aided design (CAD) solid model, without part-specific tooling, by repeatedly depositing thin layers of fusible powder and selective sintering each layer to the next with a rastered, modulated, CO{sub 2} laser beam. This technology, originally intended to produce parts and patterns from powdered waxes and thermoplastics, can be extended through use of thermoplastic-coated inorganic powder to producing green shapes which contain metal or ceramic powder bound together with the thermoplastic. These shapes can be subsequently processed into metal, ceramic, or composite metal/ceramic parts by various methods. Generally, the strength of the green shape critically depends on the layer to layer fusion that is achieved. A model of the SLS process is presented that correctly estimates the sintering depths in poly(methyl methacrylate) (PMMA) and coated silicon carbide (SiC) powders that result from operating parameters including laser power, beam scanning speed, beam diameter, scan spacing, and temperature. Green part densities and strengths are found to correlate with a combination of parameters, termed the energy density, that arise naturally from consideration of the energy input to the powder bed.

  1. Processes and applications of silicon carbide nanocomposite fibers

    Science.gov (United States)

    Shin, D. G.; Cho, K. Y.; Jin, E. J.; Riu, D. H.

    2011-10-01

    Various types of SiC such as nanowires, thin films, foam, and continuous fibers have been developed since the early 1980s, and their applications have been expanded into several new applications, such as for gas-fueled radiation heater, diesel particulate filter (DPF), ceramic fiber separators and catalyst/catalyst supports include for the military, aerospace, automobile and electronics industries. For these new applications, high specific surface area is demanded and it has been tried by reducing the diameter of SiC fiber. Furthermore, functional nanocomposites show potentials in various harsh environmental applications. In this study, silicon carbide fiber was prepared through electrospinning of the polycarbosilane (PCS) with optimum molecular weight distribution which was synthesized by new method adopting solid acid catalyst such as ZSM-5 and γ-Al2O3. Functional elements such as aluminum, titanium, tungsten and palladium easily doped in the precursor fiber and remained in the SiC fiber after pyrolysis. The uniform SiC fibers were produced at the condition of spinning voltage over 20 kV from the PCS solution as the concentration of 1.3 g/ml in DMF/Toluene (3:7) and pyrolysis at 1200°C. Pyrolyzed products were processed into several interesting applications such as thermal batteries, hydrogen sensors and gas filters.

  2. Developing a High Thermal Conductivity Fuel with Silicon Carbide Additives

    Energy Technology Data Exchange (ETDEWEB)

    baney, Ronald; Tulenko, James

    2012-11-20

    The objective of this research is to increase the thermal conductivity of uranium oxide (UO{sub 2}) without significantly impacting its neutronic properties. The concept is to incorporate another high thermal conductivity material, silicon carbide (SiC), in the form of whiskers or from nanoparticles of SiC and a SiC polymeric precursor into UO{sub 2}. This is expected to form a percolation pathway lattice for conductive heat transfer out of the fuel pellet. The thermal conductivity of SiC would control the overall fuel pellet thermal conductivity. The challenge is to show the effectiveness of a low temperature sintering process, because of a UO{sub 2}-SiC reaction at 1,377°C, a temperature far below the normal sintering temperature. Researchers will study three strategies to overcome the processing difficulties associated with pore clogging and the chemical reaction of SiC and UO{sub 2} at temperatures above 1,300°C:

  3. Recent developments in amorphous silicon-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Beneking, C.; Rech, B.; Foelsch, J.; Wagner, H. [Forschungszentrum Juelich GmbH (Germany). Inst. fuer Schicht- und Ionentechnik

    1996-03-01

    Two examples of recent advances in the field of thin-film, amorphous hydrogenated silicon (a-Si:H) pin solar cells are described: the improved understanding and control of the p/i interface, and the improvement of wide-bandgap a-Si:H material deposited at low substrate temperature as absorber layer for cells with high stabilized open-circuit voltage. Stacked a-Si:H/a-Si:H cells incorporating these concepts exhibit less than 10% (relative) efficiency degradation and show stabilized efficiencies as high as 9 to 10% (modules 8 to 9%). The use of low-gap a-Si:H and its alloys like a-SiGe:H as bottom cell absorber materials in multi-bandgap stacked cells offers additional possibilities. The combination of a-Si:H based top cells with thin-film crystalline silicon-based bottom cells appears as a promising new trend. It offers the perspective to pass significantly beyond the present landmark of 10% module efficiency reached by the technology utilizing exclusively amorphous silicon-based absorber layers, while keeping its advantages of potentially low-cost production. (orig.) 47 refs.

  4. Picosecond Laser Machining of Deep Holes in Silicon Infi ltrated Silicon Carbide Ceramics

    Institute of Scientific and Technical Information of China (English)

    ZHANG Qing; WANG Chunhui; LIU Yongsheng; ZHANG Litong; CHENG Guanghua

    2015-01-01

    Silicon infi ltrated silicon carbide (Si-SiC) ceramics, as high hardness materials, are diffi cult to machine, especially drilling micro-holes. In this study, the interaction of picosecond laser pulses (1 ps at 1 030 nm) with Si-SiC ceramics was investigated. Variations of the diameter and depth of circular holes with the growth of the laser energy density were obtained. The results indicate that the increase of machining depth follows a nonlinear relation with the increasing of laser energy density, while the diameter has little change with that. Moreover, it is found that some debris and particles are deposited around and inside the holes and waviness is in the entrance and at walls of the holes after laser processing.

  5. Test setup for long term reliability investigation of Silicon Carbide MOSFETs

    DEFF Research Database (Denmark)

    Baker, Nick; Munk-Nielsen, Stig; Beczkowski, Szymon

    2013-01-01

    Silicon Carbide MOSFETs are now widely available and have frequently been demonstrated to offer numerous advantages over Silicon based devices. However, reliability issues remain a significant concern in their realisation in commercial power electronic systems. In this paper, a test bench...... is designed that enables an accelerated power cycling test to be performed on packaged Silicon Carbide MOSFETs (TO-247) under realistic operating conditions. An accelerated power cycling test is then performed, with on-state resistance selected as the observed parameter to detect degradation. On......-state resistance is routinely monitored online through the use of an innovative voltage measurement system. The packaged Silicon Carbide MOSFET is shown to exhibit a 25% increase in on-state resistance as the device ages throughout its lifetime, with the test still on-going....

  6. Effects of space exposure on ion-beam-deposited silicon-carbide and boron-carbide coatings.

    Science.gov (United States)

    Keski-Kuha, R A; Blumenstock, G M; Fleetwood, C M; Schmitt, D R

    1998-12-01

    Two recently developed optical coatings, ion-beam-deposited silicon carbide and ion-beam-deposited boron carbide, are very attractive as coatings on optical components for instruments for space astronomy and earth sciences operating in the extreme-UV spectral region because of their high reflectivity, significantly higher than any conventional coating below 105 nm. To take full advantage of these coatings in space applications, it is important to establish their ability to withstand exposure to the residual atomic oxygen and other environmental effects at low-earth-orbit altitudes. The first two flights of the Surface Effects Sample Monitor experiments flown on the ORFEUS-SPAS and the CRISTA-SPAS Shuttle missions provided the opportunity to study the effects of space exposure on these materials. The results indicate a need to protect ion-beam-deposited silicon-carbide-coated optical components from environmental effects in a low-earth orbit. The boron-carbide thin-film coating is a more robust coating able to withstand short-term exposure to atomic oxygen in a low-earth-orbit environment.

  7. Comment on ``Electron drift mobility in doped amorphous silicon''

    Science.gov (United States)

    Overhof, H.; Silver, M.

    1989-05-01

    Experimental drift-mobility data obtained by different methods in doped amorphous silicon are compared. It is shown that the presence of a long-range random potential will lead to a modification of the drift mobility in one experiment while the corresponding values in other experiments are virtually unaffected. It is shown that this effect accounts for the apparent discrepancy between the results of these experiments rather than the shift of the mobility edge upon doping which was recently proposed by Street, Kakalios, and Hack [Phys. Rev. B 38, 5603 (1988)] in order to understand their data.

  8. Eigenmode Splitting in all Hydrogenated Amorphous Silicon Nitride Coupled Microcavity

    Institute of Scientific and Technical Information of China (English)

    ZHANG Xian-Gao; HUANG Xin-Fan; CHEN Kun-Ji; QIAN Bo; CHEN San; DING Hong-Lin; LIU Sui; WANG Xiang; XU Jun; LI Wei

    2008-01-01

    Hydrogenated amorphous silicon nitride based coupled optical microcavity is investigated theoretically and experimentally. The theoretical calculation of the transmittance spectra of optical microcavity with one cavity and coupled microcavity with two-cavity is performed.The optical eigenmode splitting for coupled microcavity is found due to the interaction between the neighbouring localized cavities.Experimentally,the coupled cavity samples are prepared by plasma enhanced chemical vapour deposition and characterized by photoluminescence measurements.It is found that the photoluminescence peak wavelength agrees well with the cavity mode in the calculated transmittance spectra.This eigenmode splitting is analogous to the electron state energy splitting in diatom molecules.

  9. Atomic structure of the amorphous nonstoichiometric silicon oxides and nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Gritsenko, V A [Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk (Russian Federation)

    2008-07-31

    In addition to amorphous SiO{sub 2} and Si{sub 3}N{sub 4}, the two key dielectric film materials used in modern silicon devices, the fabrication technology of nonstoichiometric SiO{sub x}N{sub y}, SiN{sub x}, and SiO{sub x} compounds is currently under development. Varying the chemical composition of these compounds allows a wide range of control over their physical - specifically, optical and electrical - properties. The development of technology for synthesizing such films requires a detailed understanding of their atomic structure. Current views on the atomic structure of nonstoichiometric silicon nitrides and oxides are reviewed and summarized. (reviews of topical problems)

  10. Structural and electrical characterization of ohmic contacts to graphitized silicon carbide.

    Science.gov (United States)

    Maneshian, Mohammad H; Lin, Ming-Te; Diercks, David; Shepherd, Nigel D

    2009-12-09

    Titanium was deposited onto silicon carbide (6H-SiC) using the 248 nm line of an excimer laser in a vacuum of 10(-6) Torr, and ohmic contacts were formed by annealing the structure at approximately 1000 degrees C. Further anneals between 1350 and 1430 degrees C did not degrade the formed contacts, and Raman analysis confirmed that sublimation of silicon from the near surface layers of the silicon carbide between the contact pads resulted in graphene formation after 5 min, 1428 degrees C anneals. The graphene formation was accompanied by a significant enhancement of ohmic behavior, and, it was found to be sensitive to the temperature ramp-up rate and annealing time. High-resolution transmission electron microscopy showed that the interface between the metal and silicon carbide remained sharp and free of macroscopic defects even after 30 min, 1430 degrees C anneals. The interface was determined to be carbon rich by elemental analysis, which indicates metal carbide formation. The potential of this approach for achieving ohmic contacts and graphene formation on silicon carbide substrates is discussed. A mechanism for the sequential formation of ohmic contacts then graphene is proposed.

  11. Interfacial Engineering of Silicon Carbide Nanowire/Cellulose Microcrystal Paper toward High Thermal Conductivity.

    Science.gov (United States)

    Yao, Yimin; Zeng, Xiaoliang; Pan, Guiran; Sun, Jiajia; Hu, Jiantao; Huang, Yun; Sun, Rong; Xu, Jian-Bin; Wong, Ching-Ping

    2016-11-16

    Polymer composites with high thermal conductivity have attracted much attention, along with the rapid development of electronic devices toward higher speed and better performance. However, high interfacial thermal resistance between fillers and matrix or between fillers and fillers has been one of the primary bottlenecks for the effective thermal conduction in polymer composites. Herein, we report on engineering interfacial structure of silicon carbide nanowire/cellulose microcrystal paper by generating silver nanostructures. We show that silver nanoparticle-deposited silicon carbide nanowires as fillers can effectively enhance the thermal conductivity of the matrix. The in-plane thermal conductivity of the resultant composite paper reaches as high as 34.0 W/m K, which is one order magnitude higher than that of conventional polymer composites. Fitting the measured thermal conductivity with theoretical models qualitatively demonstrates that silver nanoparticles bring the lower interfacial thermal resistances both at silicon carbide nanowire/cellulose microcrystal and silicon carbide nanowire/silicon carbide nanowire interfaces. This interfacial engineering approach provides a powerful tool for sophisticated fabrication of high-performance thermal-management materials.

  12. Graphene from Amorphous Titanium Carbide by Chlorination under 200°C and Atmospheric Pressures

    Science.gov (United States)

    Peng, Tao; Kou, Zongkui; Wu, Hui; Mu, Shichun

    2014-06-01

    The synthesis of graphene via decomposition of SiC has opened a promising route for large-scale production of graphene. However, extremely high requirements for almost perfectly ordered crystal SiC and harsh process conditions such as high temperatures (>1200°C) and ultra-high vacuum are two significant challenges hindering its wide use to synthesize graphene by decomposition of SiC. Here, we show that the readily available precursor of carbides, amorphous TiC (a-Ti1-xCx), can be transformed into graphene nanosheets (GNS) with tunable layers by chlorination method at very low temperatures (200°C) and ambient pressures. Moreover, freestanding GNS can be achieved by stripping off GNS from the surface of resulting particles. Therefore, our strategy, the direct transformation of a-Ti1-xCx into graphene, is simple and expected to be easily scaled up.

  13. Microstructural study of oxidation of carbon-rich amorphous boron carbide coating

    Institute of Scientific and Technical Information of China (English)

    Bin ZENG; Zu-de FENG; Si-wei LI; Yong-sheng LIU

    2008-01-01

    Carbon-rich amorphous boron carbide (BxC) coatings were annealed at 400℃, 700℃, 1000℃ and 1200℃ for 2 h in air atmosphere. The microstructure and composition of the as-deposited and annealed coat-ings were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), micro-Raman spectro-scopy and energy dispersive X-ray spectroscopy (EDS). All of the post-anneal characterizations demonstrated the ability of carbon-rich BxC coatings to protect the graphite substrate against oxidation. Different oxidation modes of the coatings were found at low temperature (400℃), moderate temperature (700℃) and high temper-ature (1000℃ and 1200℃). Finally, the feasibility of the application of carbon-rich BxC instead of pyrolytic car-bon (PyC) as a fiber/matrix interlayer in ceramics-matrix composites (CMCs) is discussed here.

  14. Au ion irradiation of various silicon carbide fiber-reinforced SiC matrix composites

    Energy Technology Data Exchange (ETDEWEB)

    Chaâbane, Nihed, E-mail: nihed.chaabane@cea.fr [CEA, INSTN/UEPTN, F-91191 Gif-sur-Yvette (France); Flem, Marion Le [CEA, DEN/DMN/SRMA, F-91191 Gif-sur-Yvette (France); Tanguy, Morgane [CEA, INSTN/UEPTN, F-91191 Gif-sur-Yvette (France); Urvoy, Stéphane [CEA, DEN/DMN/SRMA, F-91191 Gif-sur-Yvette (France); Sandt, Christophe; Dumas, Paul [Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette Cedex (France); Serruys, Yves [CEA, DEN/DMN/SRMP, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

    2013-08-15

    Silicon carbide fiber-reinforced SiC matrix composites are promising candidates as fuel cladding for several concepts of Generation IV reactors and as structural materials for fusion reactors. The composites used in this study were composed of a SiC matrix obtained by chemical vapor infiltration associated with various fiber types (Tyranno Type-S, Tyranno SA Grade-3 and Hi-Nicalon Type-S) and with a PyC layer as the interphase. 12 MeV Au ions were used for irradiation up to 0.05 and 1 displacement per atom (dpa) fluences at room temperature and 800 °C. Analysis of both microstructure and composition of composites were performed by scanning electron microscopy (SEM), electron probe microanalysis and Raman spectroscopy. At room temperature and low fluence, Raman spectroscopy results showed that irradiation induces a disordered/distorted state into fibers and matrix. With increasing fluence, a total amorphization of these constituents occurs. The increase in the irradiation temperature leads to a damage recovery and partial recrystallization of samples. Image analysis performed from SEM micrographs highlights no significant change in fiber diameter and shape. However, SEM analysis suggests a longitudinal shrinkage of Tyranno Type-S fibers for the composite irradiated at 1 dpa at room temperature and 800 °C. These results are in complete agreement with conclusions from neutron irradiations suggesting an appropriate relevance of irradiations with 12 MeV Au.

  15. Catalytic acceleration of graphitisation of amorphous carbon during synthesis of tungsten carbide from tungsten and excess amorphous carbon in a solar furnace

    Energy Technology Data Exchange (ETDEWEB)

    Shohoji, N. [Inst. Nacional de Engenharia e Tecnologia Industrial, Lisbon (Portugal); Guerra Rosa, L.; Cruz Fernandes, J. [Instituto Superior Tecnico, Departamento de Engenharia de Materiais, Av. Rovisco Pais, 1049-001, Lisbon (Portugal); Martinez, D.; Rodriguez, J. [Plataforma Solar de Almeria, Centro Europeo de Ensayos de Energia Solar, Centro de Investigaciones Energeticas Medioambientales y Tecnologicas, P.O. Box 22, 04200, Tabernas (Spain)

    1999-03-25

    Amorphous carbon is one of the allotropes of carbon possessing carbon activity a(C) higher than that of graphite (standard state with a(C) = 1). Amorphous carbon is in a metastable state but, under normal circumstances, it takes several hours to be graphitised to an extent detectable by X-ray diffraction even at temperature higher than 1500 C. In the present work, we report the accelerated graphitisation of amorphous carbon induced apparently by the catalytic action of tungsten (W) or tungsten carbide (WC) during synthesis of WC started from W and active carbon in solar furnace under controlled atmosphere (Ar or N{sub 2}). This degree of graphitisation of amorphous carbon did not proceed by the similar reaction undertaken in the traditional laboratory furnace under the comparable conditions. (orig.) 14 refs.

  16. Determining the Onset of Amorphization of Crystalline Silicon due to Hypervelocity Impact

    Science.gov (United States)

    Poletti, C. Shane; Bachlechner, Martina E.

    2009-03-01

    Atomistic simulations were performed to study a hypervelocity impactor striking a silicon/silicon nitride interface with varying silicon substrate thicknesses. Visualization indicates that the crystalline silicon amorphizes upon impact. The objective of the present study is to determine where the boundary between amorphous and crystalline silicon occurrs. In the analysis, the silicon substrate is separated into sixty layers and for each layer the average z displacement is determined. Our results show that the boundary between amorphous and crystalline silicon occurs between layers 20 and 22 for an impactor traveling at 5 km/s. This corresponds to a depth of approximately 32 Angstroms into the silicon. More detailed analyses reveals that the z displacement is noticeably larger for the layers that do not have a silicon atom bonded beneath them compared to the ones that do.

  17. Silicon Carbide Temperature Monitor Processing Improvements. Status Report

    Energy Technology Data Exchange (ETDEWEB)

    Unruh, Troy Casey [Idaho National Lab. (INL), Idaho Falls, ID (United States); Daw, Joshua Earl [Idaho National Lab. (INL), Idaho Falls, ID (United States); Al Rashdan, Ahamad [Idaho National Lab. (INL), Idaho Falls, ID (United States)

    2016-01-29

    Silicon carbide (SiC) temperature monitors are used as temperature sensors in Advanced Test Reactor (ATR) irradiations at the Idaho National Laboratory (INL). Although thermocouples are typically used to provide real-time temperature indication in instrumented lead tests, other indicators, such as melt wires, are also often included in such tests as an independent technique of detecting peak temperatures incurred during irradiation. In addition, less expensive static capsule tests, which have no leads attached for real-time data transmission, often rely on melt wires as a post-irradiation technique for peak temperature indication. Melt wires are limited in that they can only detect whether a single temperature is or is not exceeded. SiC monitors are advantageous because a single monitor can be used to detect for a range of temperatures that occurred during irradiation. As part of the process initiated to make SiC temperature monitors available at the ATR, post-irradiation evaluations of these monitors have been previously completed at the High Temperature Test Laboratory (HTTL). INL selected the resistance measurement approach for determining irradiation temperature from SiC temperature monitors because it is considered to be the most accurate measurement. The current process involves the repeated annealing of the SiC monitors at incrementally increasing temperature, with resistivity measurements made between annealing steps. The process is time consuming and requires the nearly constant attention of a trained staff member. In addition to the expensive and lengthy post analysis required, the current process adds many potential sources of error in the measurement, as the sensor must be repeatedly moved from furnace to test fixture. This time-consuming post irradiation analysis is a significant portion of the total cost of using these otherwise inexpensive sensors. An additional consideration of this research is that, if the SiC post processing can be automated, it

  18. Surface and Internal Structure of Pristine Presolar Silicon Carbide

    Science.gov (United States)

    Stroud, Rhonda, M.; Bernatowicz, Thomas J.

    2005-01-01

    Silicon carbide is the most well-studied type of presolar grain. Isotope measurements of thousands [1,2] and structural data from over 500 individual grains have been reported [3]. The isotope data indicate that approximately 98% originated in asymptotic giant branch stars and 2% in supernovae. Although tens of different polytypes of SiC are known to form synthetically, only two polytypes have been reported for presolar grains. Daulton et al. [3] found that for SiC grains isolated from Murchison by acid treatments, 79.4% are 3C cubic beta-SiC, 2.7% are 2H hexagonal alpha-SiC, 17.1% are intergrowths of and , and 0.9% are heavily disordered. They report that the occurrence of only the and polytypes is consistent with the observed range of condensation temperatures of circumstellar dust for carbon stars. Further constraint on the formation and subsequent alteration of the grains can be obtained from studies of the surfaces and interior structure of grains in pristine form, i.e., prepared without acid treatments [4,5]. The acid treatments remove surface coatings, produce etch pits around defect sites and could remove some subgrains. Surface oxides have been predicted by theoretical modeling as a survival mechanism for SiC grains exposed to the hot oxidizing solar nebula [6]. Scanning electron microscopy studies of pristine SiC shows some evidence for the existence of oxide and organic coatings [4]. We report herein on transmission electron microscopy studies of the surface and internal structure of two pristine SiC grains, including definitive evidence of an oxide rim on one grain, and the presence of internal TiC and AlN grains.

  19. USE OF SILICON CARBIDE MONITORS IN ATR IRRADIATION TESTING

    Energy Technology Data Exchange (ETDEWEB)

    K. L. Davis; B. Chase; T. Unruh; D. Knudson; J. L. Rempe

    2012-07-01

    In April 2007, the Department of Energy (DOE) designated the Advanced Test Reactor (ATR) a National Scientific User Facility (NSUF) to advance US leadership in nuclear science and technology. By attracting new users from universities, laboratories, and industry, the ATR will support basic and applied nuclear research and development and help address the nation's energy security needs. In support of this new program, the Idaho National Laboratory (INL) has developed in-house capabilities to fabricate, test, and qualify new and enhanced temperature sensors for irradiation testing. Although most efforts emphasize sensors capable of providing real-time data, selected tasks have been completed to enhance sensors provided in irradiation locations where instrumentation leads cannot be included, such as drop-in capsule and Hydraulic Shuttle Irradiation System (HSIS) or 'rabbit' locations. For example, silicon carbide (SiC) monitors are now available to detect peak irradiation temperatures between 200°C and 800°C. Using a resistance measurement approach, specialized equipment installed at INL's High Temperature Test Laboratory (HTTL) and specialized procedures were developed to ensure that accurate peak irradiation temperature measurements are inferred from SiC monitors irradiated at the ATR. Comparison examinations were completed by INL to demonstrate this capability, and several programs currently rely on SiC monitors for peak temperature detection. This paper discusses the use of SiC monitors at the ATR, the process used to evaluate them at the HTTL, and presents representative measurements taken using SiC monitors.

  20. A silicon carbide nanowire field effect transistor for DNA detection.

    Science.gov (United States)

    Fradetal, L; Bano, E; Attolini, G; Rossi, F; Stambouli, V

    2016-06-10

    This work reports on the label-free electrical detection of DNA molecules for the first time, using silicon carbide (SiC) as a novel material for the realization of nanowire field effect transistors (NWFETs). SiC is a promising semiconductor for this application due to its specific characteristics such as chemical inertness and biocompatibility. Non-intentionally n-doped SiC NWs are first grown using a bottom-up vapor-liquid-solid (VLS) mechanism, leading to the NWs exhibiting needle-shaped morphology, with a length of approximately 2 μm and a diameter ranging from 25 to 60 nm. Then, the SiC NWFETs are fabricated and functionalized with DNA molecule probes via covalent coupling using an amino-terminated organosilane. The drain current versus drain voltage (I d-V d) characteristics obtained after the DNA grafting and hybridization are reported from the comparative and simultaneous measurements carried out on the SiC NWFETs, used either as sensors or references. As a representative result, the current of the sensor is lowered by 22% after probe DNA grafting and by 7% after target DNA hybridization, while the current of the reference does not vary by more than ±0.6%. The current decrease confirms the field effect induced by the negative charges of the DNA molecules. Moreover, the selectivity, reproducibility, reversibility and stability of the studied devices are emphasized by de-hybridization, non-complementary hybridization and re-hybridization experiments. This first proof of concept opens the way for future developments using SiC-NW-based sensors.

  1. Silicon Carbide Telescope Investigations for the LISA Mission

    Science.gov (United States)

    Sanjuan, J.; Spannagel, R.; Braxmaier, C.; Korytov, D.; Mueller, G.; Preston, A.; Livas, J.

    2013-01-01

    Space-based gravitational wave (GW) detectors are conceived to detect GWs in the low frequency range (mili-Hertz) by measuring the distance between free-falling proof masses in spacecraft (SC) separated by 5 Gm. The reference in the last decade has been the joint ESA-NASA mission LISA. One of the key elements of LISA is the telescope since it simultaneously gathers the light coming from the far SC (approximately or equal to 100 pW) and expands, collimates and sends the outgoing beam (2 W) to the far SC. Demanding requirements have been imposed on the telescope structure: the dimensional stability of the telescope must be approximately or equal to 1pm Hz(exp-1/2) at 3 mHz and the distance between the primary and the secondary mirrors must change by less than 2.5 micrometer over the mission lifetime to prevent defocussing. In addition the telescope structure must be light, strong and stiff. For this reason a potential on-axis telescope structure for LISA consisting of a silicon carbide (SiC) quadpod structure has been designed, constructed and tested. The coefficient of thermal expansion (CTE) in the LISA expected temperature range has been measured with a 1% accuracy which allows us to predict the shrinkage/expansion of the telescope due to temperature changes, and pico-meter dimensional stability has been measured at room temperature and at the expected operating temperature for the LISA telescope (around -6[deg]C). This work is supported by NASA Grants NNX10AJ38G and NX11AO26G,

  2. Combining graphene with silicon carbide: synthesis and properties - a review

    Science.gov (United States)

    Shtepliuk, Ivan; Khranovskyy, Volodymyr; Yakimova, Rositsa

    2016-11-01

    Being a true two-dimensional crystal, graphene possesses a lot of exotic properties that would enable unique applications. Integration of graphene with inorganic semiconductors, e.g. silicon carbide (SiC) promotes the birth of a class of hybrid materials which are highly promising for development of novel operations, since they combine the best properties of two counterparts in the frame of one hybrid platform. As a specific heterostructure, graphene on SiC performs strongly, dependent on the synthesis method and the growth modes. In this article, a comprehensive review of the most relevant studies of graphene growth methods and mechanisms on SiC substrates has been carried out. The aim is to elucidate the basic physical processes that are responsible for the formation of graphene on SiC. First, an introduction is made covering some intriguing and not so often discussed properties of graphene. Then, we focus on integration of graphene with SiC, which is facilitated by the nature of SiC to assume graphitization. Concerning the synthesis methods, we discuss thermal decomposition of SiC, chemical vapor deposition and molecular beam epitaxy, stressing that the first technique is the most common one when SiC substrates are used. In addition, we briefly appraise graphene synthesis via metal mediated carbon segregation. We address in detail the main aspects of the substrate effect, such as substrate face polarity, off-cut, kind of polytype and nonpolar surfaces on the growth of graphene layers. A comparison of graphene grown on the polar faces is made. In particular, growth of graphene on Si-face SiC is critically analyzed concerning growth kinetics and growth mechanisms taking into account the specific characteristics of SiC (0001) surfaces, such as the step-terrace structure and the unavoidable surface reconstruction upon heating. In all subtopics obstacles and solutions are featured. We complete the review with a short summary and concluding remarks.

  3. Analysis of System Wide Distortion in an Integrated Power System Utilizing a High Voltage DC Bus and Silicon Carbide Power Devices

    Science.gov (United States)

    2007-06-01

    concentrated on the power supplied to a propulsion motor driven by an inverter with simulated silicon carbide switches. Theoretically, silicon ... carbide switches have the advantage of being able to withstand a very large blocking voltage and carry very large forward currents. Silicon carbide switches...are also very efficient due to their quick rise and fall times. Since silicon carbide switches can withstand high voltage differentials and switch

  4. Mechanical Properties and Microstructure of Biomorphic Silicon Carbide Ceramics Fabricated from Wood Precursors

    Science.gov (United States)

    Singh, Mrityunjay; Salem, J. A.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Silicon carbide based, environment friendly, biomorphic ceramics have been fabricated by the pyrolysis and infiltration of natural wood (maple and mahogany) precursors. This technology provides an eco-friendly route to advanced ceramic materials. These biomorphic silicon carbide ceramics have tailorable properties and behave like silicon carbide based materials manufactured by conventional approaches. The elastic moduli and fracture toughness of biomorphic ceramics strongly depend on the properties of starting wood preforms and the degree of molten silicon infiltration. Mechanical properties of silicon carbide ceramics fabricated from maple wood precursors indicate the flexural strengths of 3441+/-58 MPa at room temperature and 230136 MPa at 1350C. Room temperature fracture toughness of the maple based material is 2.6 +/- 0.2 MPa(square root of)m while the mahogany precursor derived ceramics show a fracture toughness of 2.0 +/- 0.2 Mpa(square root of)m. The fracture toughness and the strength increase as the density of final material increases. Fractographic characterization indicates the failure origins to be pores and chipped pockets of silicon.

  5. A Study of the Pickup of Abrasive Particles during Abrasion of Annealed Aluminum on Silicon Carbide Abrasive Papers,

    Science.gov (United States)

    annealed aluminium during abrasion on silicon carbide abrasive papers. Neither optical nor scanning electron microscopy adequately characterises the...despite its limitations when examining rough surfaces. The present results show that the pickup of silicon carbide particles increases with increase in

  6. Model creation and electronic structure calculation of amorphous hydrogenated boron carbide

    Science.gov (United States)

    Belhadj Larbi, Mohammed

    Boron-rich solids are of great interest for many applications, particularly, amorphous hydrogenated boron carbide (a-BC:H) thin films are a leading candidate for numerous applications such as: heterostructure materials, neutron detectors, and photovoltaic energy conversion. Despite this importance, the local structural properties of these materials are not well-known, and very few theoretical studies for this family of disordered solids exist in the literature. In order to optimize this material for its potential applications the structure property relationships need to be discovered. We use a hybrid method in this endeavor---which is to the best of our knowledge the first in the literature---to model and calculate the electronic structure of amorphous hydrogenated boron carbide (a-BC:H). A combination of classical molecular dynamics using the Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) and ab initio quantum mechanical simulations using the Vienna ab initio simulation package (VASP) have been conducted to create geometry optimized models that consist of a disordered hydrogenated twelve-vertex boron carbide icosahedra, with hydrogenated carbon cross-linkers. Then, the density functional theory (DFT) based orthogonalized linear combination of atomic orbitals (OLCAO) method was used to calculate the total and partial density of states (TDOS, PDOS), the complex dielectric function epsilon, and the radial pair distribution function (RPDF). The RPDF data stand as predictions that may be compared with future experimental electron or neutron diffraction data. The electronic structure simulations were not able to demonstrate a band gap of the same nature as that seen in prior experimental work, a general trend of the composition-properties relationship was established. The content of hydrogen and boron was found to be directly proportional to the decrease in the number of available states near the fermi energy, and inversely proportional to the

  7. Experimental and Computer Modelling Studies of Metastability of Amorphous Silicon Based Solar Cells

    NARCIS (Netherlands)

    Munyeme, Geoffrey

    2003-01-01

    We present a combination of experimental and computer modelling studies of the light induced degradation in the performance of amorphous silicon based single junction solar cells. Of particular interest in this study is the degradation kinetics of different types of amorphous silicon single junction

  8. GRANULATION TRIALS OF WASTE THE DUST SILICON CARBIDE FOR UTILIZATION IN METALLURGY

    Directory of Open Access Journals (Sweden)

    Gabriel Borowski

    2016-09-01

    Full Text Available The article presents the results of laboratory granulation tests of dust silicon carbide and the results of research on the selection of the binder and the properties of the granules obtained. The research material was a waste of the silicon carbide powder with a high fragmentation, mixed with a cement or an organic modified starch specimen. Six tests were performed in a disc granulator with 100 cm in diameter. In each series of trial specified: the type and share of the binder, the diameter of the granules, tenderness, type of structure and mechanical properties. Good granules of silicon carbide obtained with the addition of cement binder with 4% of the mass fraction and at least 24 hours of seasoning. The binder should be added twice by powdering, first in a stirred granulator, and again after manufacture. It was found that the resulting granules may be used as a replacement of ferrosilicon in the process of steelmaking.

  9. Preparation And Characterization Of Silicon Carbide Foam By Using In-Situ Generated Polyurethane Foam

    Directory of Open Access Journals (Sweden)

    Shalini Saxena

    2015-08-01

    Full Text Available Abstract The open cell silicon carbide SiC foam was prepared using highly crosslinked hybrid organic- inorganic polymer resin matrix. As inorganic polymer polycarbosilane was taken and organic resin was taken as a mixture of epoxy resin and diisocyanates. The resultant highly crosslinked hybrid resin matrix on heating and subsequently on pyrolysis yielded open cell silicon carbide foam. The hybrid resin matrix was characterized by Fourier transform Infrared Spectroscopy FT-IR and thermal properties i.e. Thermogravimetric analysis TGA amp Differential Scanning Calorimetry DSC were also studied. The morphological studies of silicon carbide ceramic foam were carried out using X-ray Spectroscopy XRD amp Scanning Electron Microscopy SEM.

  10. Synthesis of thermal and chemical resistant oxygen barrier starch with reinforcement of nano silicon carbide.

    Science.gov (United States)

    Dash, Satyabrata; Swain, Sarat K

    2013-09-12

    Starch/silicon carbide (starch/SiC) bionanocomposites were synthesized by solution method using different wt% of silicon carbide with starch matrix. The interaction between starch and silicon carbide was studied by Fourier transform infrared (FTIR) spectroscopy. The structure of the bionanocomposites was investigated by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). Thermal property of starch/SiC bionanocomposites was measured and a significant enhancement of thermal resistance was noticed. The oxygen barrier property of the composites was studied and a substantial reduction in permeability was observed as compared to the virgin starch. The reduction of oxygen permeability with enhancement of thermal stability of prepared bionanocomposites may enable the materials suitable for thermal resistant packaging and adhesive applications.

  11. Broadband antireflection silicon carbide surface by self-assembled nanopatterned reactive-ion etching

    DEFF Research Database (Denmark)

    Ou, Yiyu; Aijaz, Imran; Jokubavicius, Valdas;

    2013-01-01

    An approach of fabricating pseudoperiodic antireflective subwavelength structures on silicon carbide by using self-assembled Au nanopatterns as etching mask is demonstrated. The nanopatterning process is more time-efficiency than the e-beam lithography or nanoimprint lithography process....... The influences of the reactive-ion etching conditions and deposited Au film thickness to the subwavelength structure profile and its corresponding surface reflectance have been systematically investigated. Under the optimal experimental conditions, the average reflectance of the silicon carbide in the range...... of 390x02013;784 nm is dramatically suppressed from 21.0x00025; to 1.9x00025; after introducing the pseudoperiodic nanostructures. A luminescence enhancement of 226x00025; was achieved at an emission angle of 20x000B0; on the fluorescent silicon carbide. Meanwhile, the angle-resolved photoluminescence...

  12. Effect of silicon carbide ceramic coating process on the mirror surface quality

    Science.gov (United States)

    Wang, Peipei; Wang, Li; Wang, Gang; Bai, Yunli; Wang, Peng; Xiao, Zhenghang

    2016-10-01

    Silicon carbide, as a new reflector material, its excellent physical and chemical properties has been widely recognized by the industry. In order to make SiC mirror better used in space optical system, we used digital coating equipment during its coating process. By using ion-assisted electron evaporation method, we got a complete metal reflective film system on the surface of finely polished silicon carbide mirror. After automated coating process, by adjusting the coating parameters during the process, the surface roughness of silicon carbide improved from 7.8 nm to 5.1 nm, and the average optical reflectance of the surface reached 95% from visible to near-infrared. The metal reflective film system kept well after annealing and firmness test. As a result, the work of this paper will provide an important reference for high-precision coating process on large diameter SiC mirror.

  13. [Effects of silicon carbide on the cure depth, hardness and compressive strength of composite resin].

    Science.gov (United States)

    Wang, Ke; Lin, Yi'na; Liu, Xiaoqing

    2009-08-01

    The hardness, compressive strength and cure depth are important indices of the composite resin. This investigation was made with regard to the effects of silicon carbide on the cure depth, hardness and compressive strength of the light-curing composite resin. Different amounts of silicon carbide were added to the light-curing composite resin, which accounted for 0 wt%, 1 wt%, 0.6 wt%, 0.3 wt%, 0.1 wt%, 0.05 wt% and 0.005 wt% of the composite resin, respectively. The hardness, compressive strength and cure depth of the six afore-mentioned groups of composite resin were measured by the vernier caliper, the vickers hardness tester and the tensile strength of machine, respectively. The results showed that silicon carbide improved the hardness and compressive strength of the light-curing composite resin,when the concentration was 0.05 wt%. And the cure depth was close to that of control.

  14. Implementation Challenges for Sintered Silicon Carbide Fiber Bonded Ceramic Materials for High Temperature Applications

    Science.gov (United States)

    Singh, M.

    2011-01-01

    During the last decades, a number of fiber reinforced ceramic composites have been developed and tested for various aerospace and ground based applications. However, a number of challenges still remain slowing the wide scale implementation of these materials. In addition to continuous fiber reinforced composites, other innovative materials have been developed including the fibrous monoliths and sintered fiber bonded ceramics. The sintered silicon carbide fiber bonded ceramics have been fabricated by the hot pressing and sintering of silicon carbide fibers. However, in this system reliable property database as well as various issues related to thermomechanical performance, integration, and fabrication of large and complex shape components has yet to be addressed. In this presentation, thermomechanical properties of sintered silicon carbide fiber bonded ceramics (as fabricated and joined) will be presented. In addition, critical need for manufacturing and integration technologies in successful implementation of these materials will be discussed.

  15. Sensitivity analysis of a PWR fuel element using zircaloy and silicon carbide claddings

    Energy Technology Data Exchange (ETDEWEB)

    Faria, Rochkhudson B. de; Cardoso, Fabiano; Salome, Jean A.D.; Pereira, Claubia; Fortini, Angela, E-mail: rochkhudson@ufmg.br, E-mail: claubia@nuclear.ufmg.br [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Escola de Engenharia. Departamento de Engenharia Nuclear

    2015-07-01

    The alloy composed of zirconium has been used effectively for over 50 years in claddings of nuclear fuel, especially for PWR type reactors. However, to increase fuel enrichment with the aim of raising the burning and maintaining the safety of nuclear plants is of great relevance the study of new materials that can replace safely and efficiently zircaloy cladding. Among several proposed material, silicon carbide (SiC) has a potential to replace zircaloy as fuel cladding material due to its high-temperature tolerance, chemical stability and low neutron affinity. In this paper, the goal is to expand the study with silicon carbide cladding, checking its behavior when submitted to an environment with boron, burnable poison rods, and temperature variations. Sensitivity calculation and the impact in multiplication factor to both claddings, zircaloy and silicon carbide, were performed during the burnup. The neutronic analysis was made using the SCALE 6.0 (Standardized Computer Analysis for Licensing Evaluation) code. (author)

  16. Spark Plasma Sintering of Low Alloy Steel Modified with Silicon Carbide

    Directory of Open Access Journals (Sweden)

    Hebda M.

    2016-06-01

    Full Text Available The influence of adding different amounts of silicon carbide on the properties (density, transverse rupture strength, microhardness and corrosion resistance and microstructure of low alloy steel was investigated. Samples were prepared by mechanical alloying (MA process and sintered by spark plasma sintering (SPS technique. After the SPS process, half of each of obtained samples was heat-treated in a vacuum furnace. The results show that the high-density materials have been achieved. Homogeneous and fine microstructure was obtained. The heat treatment that followed the SPS process resulted in an increase in the mechanical and plastic properties of samples with the addition 1wt. % of silicon carbide. The investigated compositions containing 1 wt.% of SiC had better corrosion resistance than samples with 3 wt.% of silicon carbide addition. Moreover, corrosion resistance of the samples with 1 wt.% of SiC can further be improved by applying heat treatment.

  17. Microstructure and Mechanical Properties of Reaction-Formed Silicon Carbide (RFSC) Ceramics

    Science.gov (United States)

    Singh, M.; Behrendt, D. R.

    1994-01-01

    The microstructure and mechanical properties of reaction-formed silicon carbide (RFSC) ceramics fabricated by silicon infiltration of porous carbon preforms are discussed. The morphological characterization of the carbon preforms indicates a very narrow pore size distribution. Measurements of the preform density by physical methods and by mercury porosimetry agree very well and indicate that virtually all of the porosity in the preforms is open to infiltrating liquids. The average room temperature flexural strength of the RFSC material with approximately 8 at.% free silicon is 369 +/- 28 MPa (53.5 +/- 4 ksi). The Weibull strength distribution data give a characteristic strength value of 381 MPa (55 ksi) and a Weibull modulus of 14.3. The residual silicon content is lower and the strengths are superior to those of most commercially available reaction-bonded silicon carbide materials.

  18. Modelling of an ultra-thin silicatene/silicon-carbide hybrid film

    Science.gov (United States)

    Schlexer, Philomena; Pacchioni, Gianfranco

    2016-09-01

    Recently, a well-ordered silicatene/silicon-carbide hybrid thin-film supported on Ru(0 0 0 1) has been reported (2015 Surf. Sci. 632 9-13). The thin-film consist of a monolayer of corner sharing (SiO4)-tetrahedra on top of a (Si2C3) monolayer supported on the Ru(0 0 0 1) surface. This silicatene/silicon-carbide hybrid system may exhibit interesting properties for nano-technological applications and represents another example of a 2D material. We explore the physical and chemical properties of the silicatene/silicon-carbide thin-film using DFT and compare the vibrational spectra with existing experimental data. The characteristics of the silicatene/silicon-carbide hybrid system are compared with those of the bilayer-silicatene (pure SiO2 film). We found large differences in the adsorption modes of the two thin-films on the Ru(0 0 0 1) support. Whereas the bilayer-silicatene physisorbs on the Ru(0 0 0 1) surface, the silicatene/silicon-carbide layer binds via chemisorption. The chemical properties of the two thin-films were probed by adsorption of H atoms at various positions, as well as by Al-doping and the formation of hydroxyl groups (Al-OH). These results show that despite the similar structure of the top layer and the identical metal support (Ru), the mixed silicatene/silicon-carbide system behaves quite differently from the pure silica two-layer counterpart.

  19. Calorimetric study of the thermal induced transformations of ultrafine silicon carbide powder produced by RF glow discharge

    Energy Technology Data Exchange (ETDEWEB)

    Costa, J.; Sunol, J.J.; Saurina, J.; Roura, P. [Girona Univ. (Spain). Dept. d`Enginyeria Industrial; Viera, G.; Bertran, E. [Dept. de Fisica Aplicada i Electronica, Facultat de Fisica, Univ. de Barcelona (Spain); Martinez, S. [Dept. de cristallografia mineral i diposits minerals, Univ. de Barcelona (Spain)

    1997-12-31

    Nanometric powder of silicon carbide has been produced by plasma-enhanced chemical vapor deposition (PECVD) in a radiofrequency discharge of silane and methane gas mixtures. The as deposited powders consists of amorphous particles which are highly hydrogenated. We will show in this communication, that the powder structure can be improved by thermal annealing at high temperatures. The structural changes have been analyzed by several techniques such as thermal desorption of hydrogen (TDSH), differential scaning calorimetry (DSC), infrared spectroscopy (IR) and transmission electron microscopy (TEM). The kinetic parameters of processes such as Si-H and C-H bond breaking have been determined. After annealing, the particles are crystalline, hydrogen free and do not suffer room temperature oxidation. (orig.) 8 refs.

  20. Synthesis of silicon carbide in a nitrogen plasma torch: rotational temperature determination and material analysis

    Energy Technology Data Exchange (ETDEWEB)

    Ruiz-Camacho, J; Castell, R [Universidad Simon BolIvar, Departamento de Fisica, Caracas (Venezuela, Bolivarian Republic of); Castro, A; Manrique, M [Universidad Simon BolIvar, Departamento de Ciencias de los Materiales, Caracas (Venezuela, Bolivarian Republic of)], E-mail: jgruiz@usb.ve

    2008-09-07

    Experiments on silicon carbide synthesis were performed using a dc nitrogen plasma torch. Measurements of rotational temperature of nitrogen molecules by emission spectroscopy were performed, based on the band (0, 1) of the first negative system of nitrogen N{sub 2}{sup +}(B{sup 2}{sigma}{sub u}{sup +}{yields}X{sup 2}{sigma}{sub g}{sup +}) for the R branch. Three different plasma torch powers were studied in order to optimize the production of silicon carbide with our experimental set-up. The synthesized products were characterized by x-ray diffraction, scanning electron microscopy and energy dispersive x-ray spectroscopy.

  1. Synthesis of silicon carbide in a nitrogen plasma torch: rotational temperature determination and material analysis

    Science.gov (United States)

    Ruiz-Camacho, J.; Castell, R.; Castro, A.; Manrique, M.

    2008-09-01

    Experiments on silicon carbide synthesis were performed using a dc nitrogen plasma torch. Measurements of rotational temperature of nitrogen molecules by emission spectroscopy were performed, based on the band (0, 1) of the first negative system of nitrogen N_2^+ (B\\,{}^2\\Sigma_u^+ \\to X\\,{}^2\\Sigma _g^+) for the R branch. Three different plasma torch powers were studied in order to optimize the production of silicon carbide with our experimental set-up. The synthesized products were characterized by x-ray diffraction, scanning electron microscopy and energy dispersive x-ray spectroscopy.

  2. Observations on infiltration of silicon carbide compacts with an aluminium alloy

    Science.gov (United States)

    Asthana, R.; Rohatgi, P. K.

    1992-01-01

    The melt infiltration of ceramic particulates permits an opportunity to observe such fundamental materials phenomena as nucleation, dynamic wetting and growth in constrained environments. Experimental observations are presented on the infiltration behavior and matrix microstructures that form when porous compacts of platelet-shaped single crystals of alpha- (hexagonal) silicon carbide are infiltrated with a liquid 2014 Al alloy. The infiltration process involved counter gravity infiltration of suitably tamped and preheated compacts of silicon carbide platelets under an external pressure in a special pressure chamber for a set period, then by solidification of the infiltrant metal in the interstices of the bed at atmospheric pressure.

  3. Surface Modification of Nanometre Silicon Carbide Powder with Polystyrene by Inductively Coupled Plasma

    Institute of Scientific and Technical Information of China (English)

    WEI Gang; MENG Yuedong; ZHONG Shaofeng; LIU Feng; JIANG Zhongqing; SHU Xingsheng; REN Zhaoxing; WANG Xiangke

    2008-01-01

    An investigation was made into polystyrene (PS) grafted onto nanometre sili-con carbide (SIC) particles. In our experiment, the grafting polymerization reaction was in-duced by a radio frequency (RF) inductively coupled plasma (ICP) treatment of the nanome-tre powder. FTIR (Fourier transform infrared spectrum) and XPS (X-ray photoelectron spec-troscopy) results reveal that PS is grafted onto the surface of silicon carbide powder. An analysis is presented on the effectiveness of this approach as a function of plasma operating variables including the plasma treating power, treating time, and grafting reaction temperature and time.

  4. Similarities in the electrical conduction processes in hydrogenated amorphous silicon oxynitride and silicon nitride

    CERN Document Server

    Kato, H; Ohki, Y; Seol, K S; Noma, T

    2003-01-01

    Electrical conduction at high fields was examined in a series of hydrogenated amorphous silicon oxynitride and silicon nitride films with different nitrogen contents deposited by plasma-enhanced chemical vapour deposition. It was shown that the conduction is attributable to the Poole-Frenkel (PF) emission in the two materials. The energy depths of the PF sites and the dependences on the sample's chemical composition are quite similar for the two samples. It is considered that the PF sites in the two materials are identical.

  5. Modelling structure and properties of amorphous silicon boron nitride ceramics

    Directory of Open Access Journals (Sweden)

    Johann Christian Schön

    2011-06-01

    Full Text Available Silicon boron nitride is the parent compound of a new class of high-temperature stable amorphous ceramics constituted of silicon, boron, nitrogen, and carbon, featuring a set of properties that is without precedent, and represents a prototypical random network based on chemical bonds of predominantly covalent character. In contrast to many other amorphous materials of technological interest, a-Si3B3N7 is not produced via glass formation, i.e. by quenching from a melt, the reason being that the binary components, BN and Si3N4, melt incongruently under standard conditions. Neither has it been possible to employ sintering of μm-size powders consisting of binary nitrides BN and Si3N4. Instead, one employs the so-called sol-gel route starting from single component precursors such as TADB ((SiCl3NH(BCl2. In order to determine the atomic structure of this material, it has proven necessary to simulate the actual synthesis route.Many of the exciting properties of these ceramics are closely connected to the details of their amorphous structure. To clarify this structure, it is necessary to employ not only experimental probes on many length scales (X-ray, neutron- and electron scattering; complex NMR experiments; IR- and Raman scattering, but also theoretical approaches. These address the actual synthesis route to a-Si3B3N7, the structural properties, the elastic and vibrational properties, aging and coarsening behaviour, thermal conductivity and the metastable phase diagram both for a-Si3B3N7 and possible silicon boron nitride phases with compositions different from Si3N4: BN = 1 : 3. Here, we present a short comprehensive overview over the insights gained using molecular dynamics and Monte Carlo simulations to explore the energy landscape of a-Si3B3N7, model the actual synthesis route and compute static and transport properties of a-Si3BN7.

  6. Microalloying Boron Carbide with Silicon to Achieve Dramatically Improved Ductility

    Science.gov (United States)

    2014-11-18

    Fracture Toughness in Nanostructured Diamond−SiC Composites. Appl . Phys. Lett. 2004, 84, 1356−1358. (8) Sigl, L. S.; Mataga, P. A.; Dalgleish, B. J...Commun. 2012, 3, 1052. (11) Sezer, A. O.; Brand , J. I. Chemical Vapor Deposition of Boron Carbide. Mater. Sci. Eng., B 2001, 79, 191−202. (12) Thevenot...23) Johnson, G. R.; Holmquist, T. J. Response of Boron Carbide Subjected to Large Strains, High Strain Rates, and High Pressures. J. Appl . Phys. 1999

  7. Phase Field Theory and Analysis of Pressure-Shear Induced Amorphization and Failure in Boron Carbide Ceramic

    Directory of Open Access Journals (Sweden)

    John D. Clayton

    2014-07-01

    Full Text Available A nonlinear continuum phase field theory is developed to describe amorphization of crystalline elastic solids under shear and/or pressure loading. An order parameter describes the local degree of crystallinity. Elastic coefficients can depend on the order parameter, inelastic volume change may accompany the transition from crystal to amorphous phase, and transitional regions parallel to bands of amorphous material are penalized by interfacial surface energy. Analytical and simple numerical solutions are obtained for an idealized isotropic version of the general theory, for an element of material subjected to compressive and/or shear loading. Solutions compare favorably with experimental evidence and atomic simulations of amorphization in boron carbide, demonstrating the tendency for structural collapse and strength loss with increasing shear deformation and superposed pressure.

  8. Quantum transport in epitaxial graphene on silicon carbide (0001)

    Energy Technology Data Exchange (ETDEWEB)

    Jobst, Johannes

    2013-04-01

    Graphene - a two-dimensional allotrope of carbon - offers many opportunities for research in fundamental science, as well as for technological applications. First, for being a single layer of carbon atoms, which are bound in a honeycomb geometry, it represents a two-dimensional electron gas that is accessible for investigation and manipulation directly, in contrast to conventional semiconductor-based, two-dimensional systems. Second, it is chemically and mechanically robust and offers a high electrical and thermal conductivity, while being widely transparent for visible light. And third, charge carriers in graphene mimic massless Dirac fermions as graphene exhibits a linear energy dispersion. In the present thesis, epitaxial graphene that is grown by the thermal decomposition of silicon carbide (SiC) on its (0001) basal plane is investigated. Here, monolayer graphene (MLG) with reproducible properties is formed when silicon atoms sublime at high temperatures in a well-controlled manner. In addition to MLG, a carbon-rich interface layer is formed between graphene and the SiC surface. It is electrically insulating but has a strong impact on the properties of MLG. The buffer layer can be converted to a quasi-free-standing monolayer graphene (QFMLG) by intercalation of hydrogen between buffer layer and SiC surface. This treatment reduces the coupling between QFMLG and SiC. The graphene-substrate interaction can be further reduced when free-standing epitaxial graphene (FEG) is patterned. With this method, the SiC substrate is selectively etched away with a photo-electrochemical reaction, while suspended graphene devices remain. The main topics of the present thesis are the fabrication and the electrical characterization of these three materials MLG, QFMLG and FEG. In particular, classical and quantum corrections to resistivity and conductivity, as well as the interaction with the substrate are investigated with transport and magnetotransport measurements. We observe

  9. Properties of interfaces in amorphous/crystalline silicon heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Olibet, Sara; Vallat-Sauvain, Evelyne; Fesquet, Luc; Damon-Lacoste, Jerome; De Wolf, Stefaan; Ballif, Christophe [Ecole Polytechnique Federale de Lausanne (EPFL), IMT, Photovoltaics and Thin Film Electronics Laboratory, Breguet 2, 2000 Neuchatel (Switzerland); Monachon, Christian; Hessler-Wyser, Aicha [Ecole Polytechnique Federale de Lausanne (EPFL), Interdisciplinary Centre for Electron Microscopy (CIME), 1015 Lausanne (Switzerland)

    2010-03-15

    To study recombination at the amorphous/crystalline Si (a-Si:H/c-Si) heterointerface, the amphoteric nature of silicon (Si) dangling bonds is taken into account. Modeling interface recombination measured on various test structures provides insight into the microscopic passivation mechanisms, yielding an excellent interface defect density reduction by intrinsic a-Si:H and tunable field-effect passivation by doped layers. The potential of this model's applicability to recombination at other Si heterointerfaces is demonstrated. Solar cell properties of a-Si:H/c-Si heterojunctions are in good accordance with the microscopic interface properties revealed by modeling, that are, e.g., slight asymmetries in the neutral capture cross-sections and band offsets. The importance of atomically abrupt interfaces and the difficulties to obtain them on pyramidally textured c-Si is studied in combination with transmission electron microscopy. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  10. Si-H bond dynamics in hydrogenated amorphous silicon

    Science.gov (United States)

    Scharff, R. Jason; McGrane, Shawn D.

    2007-08-01

    The ultrafast structural dynamics of the Si-H bond in the rigid solvent environment of an amorphous silicon thin film is investigated using two-dimensional infrared four-wave mixing techniques. The two-dimensional infrared (2DIR) vibrational correlation spectrum resolves the homogeneous line shapes ( 4ps waiting times. The Si-H stretching mode anharmonic shift is determined to be 84cm-1 and decreases slightly with vibrational frequency. The 1→2 linewidth increases with vibrational frequency. Frequency dependent vibrational population times measured by transient grating spectroscopy are also reported. The narrow homogeneous line shape, large inhomogeneous broadening, and lack of spectral diffusion reported here present the ideal backdrop for using a 2DIR probe following electronic pumping to measure the transient structural dynamics implicated in the Staebler-Wronski degradation [Appl. Phys. Lett. 31, 292 (1977)] in a-Si:H based solar cells.

  11. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  12. All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide

    Science.gov (United States)

    Simin, D.; Soltamov, V. A.; Poshakinskiy, A. V.; Anisimov, A. N.; Babunts, R. A.; Tolmachev, D. O.; Mokhov, E. N.; Trupke, M.; Tarasenko, S. A.; Sperlich, A.; Baranov, P. G.; Dyakonov, V.; Astakhov, G. V.

    2016-07-01

    We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-28SiC) and reveal not yet considered terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3 /2 color center. These terms give rise to additional spin transitions, which would be otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp variation of the photoluminescence intensity in the vicinity of this level anticrossing, which can be used for a purely all-optical sensing of the magnetic field. We achieve dc magnetic field sensitivity better than 100 nT /√{Hz } within a volume of 3 ×10-7m m3 at room temperature and demonstrate that this contactless method is robust at high temperatures up to at least 500 K. As our approach does not require application of radio-frequency fields, it is scalable to much larger volumes. For an optimized light-trapping waveguide of 3 mm3 , the projection noise limit is below 100 fT /√{Hz } .

  13. Comparison of silicon and 4H silicon carbide patterning using focused ion beams

    Energy Technology Data Exchange (ETDEWEB)

    Veerapandian, S.K.P. [Chair of Electron Devices, University of Erlangen-Nuremberg, Cauerstrasse 6, 91058 Erlangen (Germany); Beuer, S.; Rumler, M.; Stumpf, F. [Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Schottkystrasse 10, 91058 Erlangen (Germany); Thomas, K.; Pillatsch, L.; Michler, J. [Empa Materials Science and Technology, Feuerwerkerstrasse 39, 3602 Thun (Switzerland); Frey, L. [Chair of Electron Devices, University of Erlangen-Nuremberg, Cauerstrasse 6, 91058 Erlangen (Germany); Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Schottkystrasse 10, 91058 Erlangen (Germany); Rommel, M. [Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Schottkystrasse 10, 91058 Erlangen (Germany)

    2015-12-15

    In this work, focused ion beam (FIB) milling of different structures is studied and compared for two different electronic materials, i.e., silicon (Si) and silicon carbide (SiC). Results show that the same processing parameters yield different trench cross sections for Si and SiC, even when the different material removal rates (MRR) are taken into account. In order to investigate more complex structures, nanocone arrays were fabricated in Si and SiC. The difference in the shape of the trench cross section and complex structures can be mainly explained by the significant difference in the angle dependent MRR for both materials. Other effects which occur during FIB irradiation by the non-ideal beam shape such as swelling and damage outside of the purposely processed region are emulated and sensitively studied by scanning probe microscopy techniques such as atomic force microscopy (in-line and off-line) and scanning spreading resistance microscopy, respectively, for SiC and the results are compared with those for Si.

  14. Stability and electrokinetic potential of silicon carbide suspensions in aqueous organic media

    Science.gov (United States)

    Yeremenko, B. V.; Lyubchenko, I. N.; Skobets, I. Y.

    1984-01-01

    The method of electroosmosis was used to study the dependence of the electrokinetic potential of silicon carbide suspensions in mixtures of water -n. alcohol. The reasons for the dependence of the electrokinetic potential on the composition of the intermicellar liquid are discussed.

  15. Recent trends and theoretical background in sintering of silicon carbide ceramics

    Science.gov (United States)

    Suzuki, H.

    1983-01-01

    This article gives an outline of sintering techniques of silicon carbide and refers to recent developments. These techniques are also applicable to other oxides with a high melting point and particularly high sinterability, namely MgO and BeO.

  16. Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) power supply for the Power Processing Unit (PPU) of...

  17. Synthesis of silicon carbide from rice husk in a packed bed arc reactor

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, P.K.; Nayak, B.B.; Mohanty, B. [Regional Research Lab., Bhubaneswar (India)

    1995-09-01

    Silicon carbide in the form of powder was prepared from boiler burnt rice husk in a new type of packed bed arc reactor where the raw materials were processed in briquette form. X-ray diffraction analysis identified the presence of both {beta} and {alpha} SiC. Microstructural characterization revealed the presence of triangular, truncated triangular, and hexagonal crystallites, along with platelets.

  18. Artificial Dielectric Layer Based on PECVD Silicon Carbide for Terahertz Sensing Applications

    NARCIS (Netherlands)

    Fiorentino, G.; Syed, W.; Adam, A.; Neto, A.; Sarro, P.M.

    2014-01-01

    The refractive index of a conventional dielectric layer can be enhanced using an Artificial Dielectric Layer (ADL). Here we present the fabrication of low temperature PECVD Silicon Carbide (SiC) membranes with very high refractive index (up to 5 at 1 THz) in the terahertz frequency range. The SiC de

  19. Test bench for thermal cycling of 10 kV silicon carbide power modules

    DEFF Research Database (Denmark)

    Sønderskov, Simon Dyhr; Jørgensen, Asger Bjørn; Maarbjerg, Anders Eggert;

    2016-01-01

    This paper presents a test bench for lifetime investigation of 10 kV silicon carbide power modules. The test bench subjects high voltage switching operation to the modules while power cycling. Thus both a thermal and electrical operating point is emulated. The power cycling setup features offline...

  20. Adsorption studies of the gram-negative bacteria onto nanostructured silicon carbide.

    Science.gov (United States)

    Borkowski, Andrzej; Szala, Mateusz; Cłapa, Tomasz

    2015-02-01

    In this study, we demonstrated a significant adsorption of Pseudomonas putida bacteria onto aggregates of nanofibers (NFSiC) and nanorods (NRSiC) of silicon carbide (SiC) in aqueous suspensions. Langmuir and Freundlich isotherms were used to quantify adsorption affinities. It was found that adsorption of the bacteria strongly depended on the structure of the silicon carbide and the pH of the aqueous solution, which affected the isoelectric point of both the silicon carbide and the bacterial cells. The strongest affinity of bacteria was noted in the case of NRSiC aggregates. Affinity was inversely proportional to pH. Similarly, the adsorption of bacteria to the surface of the aggregates increased with decreasing pH. For NFSiC, the affinity of the bacteria for the surface of the aggregates was also inversely proportional to pH. However, adsorption increased at higher pH values. This discrepancy was explained by microscopic analysis, which showed that the bacterial cells were both adsorbed onto and trapped by NFSiC. The adsorption of bacteria onto a micrometric silicon carbide reference material was significantly smaller than adsorption onto nanostructured SiC.

  1. Electromagnetic simulations of microwave heating experiments using reaction vessels made out of silicon carbide.

    Science.gov (United States)

    Robinson, John; Kingman, Sam; Irvine, Derek; Licence, Peter; Smith, Alastair; Dimitrakis, Georgios; Obermayer, David; Kappe, C Oliver

    2010-09-28

    There is a growing body of literature which reports the use of silicon carbide vessels to shield reaction mixtures during microwave heating. In this paper we use electromagnetic simulations and microwave experiments to show that silicon carbide vessels do not exclude the electric field, and that dielectric heating of reaction mixtures will take place in addition to heat transfer from the silicon carbide. The contribution of dielectric heating and heat transfer depends on the dielectric properties of the mixture, and the temperature at which the reaction is carried out. Solvents which remain microwave absorbent at high temperatures, such as ionic liquids, will heat under the direct influence of the electric field from 30-250 degrees C. Solvents which are less microwave absorbent at higher temperatures will be heated by heat-transfer only at temperatures in excess of 150 degrees C. The results presented in this paper suggest that the influence of the electric field cannot be neglected when interpreting microwave assisted synthesis experiments in silicon carbide vessels.

  2. Machining studies of die cast aluminum alloy-silicon carbide composites

    Science.gov (United States)

    Sornakumar, Thambu; Kathiresan, Marimuthu

    2010-10-01

    Metal matrix composites (MMCs) with high specific stiffness, high strength, improved wear resistance, and thermal properties are being increasingly used in advanced structural, aerospace, automotive, electronics, and wear applications. Aluminum alloy-silicon carbide composites were developed using a new combination of the vortex method and the pressure die-casting technique in the present work. Machining studies were conducted on the aluminum alloy-silicon carbide (SiC) composite work pieces using high speed steel (HSS) end-mill tools in a milling machine at different speeds and feeds. The quantitative studies on the machined work piece show that the surface finish is better for higher speeds and lower feeds. The surface roughness of the plain aluminum alloy is better than that of the aluminum alloy-silicon carbide composites. The studies on tool wear show that flank wear increases with speed and feed. The end-mill tool wear is higher on machining the aluminum alloy-silicon carbide composites than on machining the plain aluminum alloy.

  3. Reaction rate uncertainties and 26Al in AGB silicon carbide stardust

    NARCIS (Netherlands)

    van Raai, M.A.; Lugaro, M.A.; Karakas, A.I.; Iliadis, C.

    2008-01-01

    Context. Stardust is a class of presolar grains each of which presents an ideally uncontaminated stellar sample. Mainstream silicon carbide (SiC) stardust formed in the extended envelopes of carbon-rich asymptotic giant branch (AGB) stars and incorporated the radioactive nucleus 26Al as a trace elem

  4. Biomimetic mineralization of calcium phosphate on a functionalizaed porous silicon carbide biomaterial

    NARCIS (Netherlands)

    Dey, A.; Hoogen, van de C.J.; Rosso, M.; Lousberg, N.J.H.G.M.; Hendrix, M.M.R.M.; Friedrich, H.; Ramirez Rico, J.; Zuilhof, H.; With, de G.; Sommerdijk, N.A.J.M.

    2012-01-01

    Porous biomorphic silicon carbide (bioSiC) is a structurally realistic, high-strength, and biocompatible material which is promising for application in load-bearing implants. The deposition of an osteoconductive coating is essential for further improvement of its integration with the surrounding tis

  5. Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

    Institute of Scientific and Technical Information of China (English)

    DING Wen-ge; YU Wei; ZHANG Jiang-yong; HAN Li; FU Guang-sheng

    2006-01-01

    The hydrogenated amorphous silicon nitride (SiNx) thin films embedded with nano-structural silicon were prepared and the microstructures at the interface of silicon nano-grains/SiNx were identified by the optical absorption and Raman scattering measurements. Characterized by the exponential tail of optical absorption and the band-width of the Raman scattering TO mode, the disorder in the interface region increases with the gas flow ratio increasing. Besides, as reflected by the sub-gap absorption coefficients, the density of interface defect states decreases, which can be attributed to the structural mismatch in the interface region and also the changes of hydrogen content in the deposited films. Additional annealing treatment results in a significant increase of defects and degree of disorder, for which the hydrogen out-diffusion in the annealing process would be responsible.

  6. Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

    Energy Technology Data Exchange (ETDEWEB)

    Abdulraheem, Yaser, E-mail: yaser.abdulraheem@kuniv.edu.kw [Electrical Engineering Department, College of Engineering and Petroleum, Kuwait University. P.O. Box 5969, 13060 Safat (Kuwait); Gordon, Ivan; Bearda, Twan; Meddeb, Hosny; Poortmans, Jozef [IMEC, Kapeldreef 75, 3001, Leuven (Belgium)

    2014-05-15

    An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H) layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si) wafers by plasma enhanced chemical vapor deposition (PECVD). The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE) in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc) bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause of the observed

  7. Optical bandgap of ultra-thin amorphous silicon films deposited on crystalline silicon by PECVD

    Directory of Open Access Journals (Sweden)

    Yaser Abdulraheem

    2014-05-01

    Full Text Available An optical study based on spectroscopic ellipsometry, performed on ultrathin hydrogenated amorphous silicon (a-Si:H layers, is presented in this work. Ultrathin layers of intrinsic amorphous silicon have been deposited on n-type mono-crystalline silicon (c-Si wafers by plasma enhanced chemical vapor deposition (PECVD. The layer thicknesses along with their optical properties –including their refractive index and optical loss- were characterized by spectroscopic ellipsometry (SE in a wavelength range from 250 nm to 850 nm. The data was fitted to a Tauc-Lorentz optical model and the fitting parameters were extracted and used to compute the refractive index, extinction coefficient and optical bandgap. Furthermore, the a-Si:H film grown on silicon was etched at a controlled rate using a TMAH solution prepared at room temperature. The optical properties along with the Tauc-Lorentz fitting parameters were extracted from the model as the film thickness was reduced. The etch rate for ultrathin a-Si:H layers in TMAH at room temperature was found to slow down drastically as the c-Si interface is approached. From the Tauc-Lorentz parameters obtained from SE, it was found that the a-Si film exhibited properties that evolved with thickness suggesting that the deposited film is non-homogeneous across its depth. It was also found that the degree of crystallinity and optical (Tauc bandgap increased as the layers were reduced in thickness and coming closer to the c-Si substrate interface, suggesting the presence of nano-structured clusters mixed into the amorphous phase for the region close to the crystalline silicon substrate. Further results from Atomic Force Microscopy and Transmission Electron Microscopy confirmed the presence of an interfacial transitional layer between the amorphous film and the underlying substrate showing silicon nano-crystalline enclosures that can lead to quantum confinement effects. Quantum confinement is suggested to be the cause

  8. The influence of hydrogen on the chemical, mechanical, optical/electronic, and electrical transport properties of amorphous hydrogenated boron carbide

    Science.gov (United States)

    Nordell, Bradley J.; Karki, Sudarshan; Nguyen, Thuong D.; Rulis, Paul; Caruso, A. N.; Purohit, Sudhaunshu S.; Li, Han; King, Sean W.; Dutta, Dhanadeep; Gidley, David; Lanford, William A.; Paquette, Michelle M.

    2015-07-01

    Because of its high electrical resistivity, low dielectric constant (κ), high thermal neutron capture cross section, and robust chemical, thermal, and mechanical properties, amorphous hydrogenated boron carbide (a-BxC:Hy) has garnered interest as a material for low-κ dielectric and solid-state neutron detection applications. Herein, we investigate the relationships between chemical structure (atomic concentration B, C, H, and O), physical/mechanical properties (density, porosity, hardness, and Young's modulus), electronic structure [band gap, Urbach energy (EU), and Tauc parameter (B1/2)], optical/dielectric properties (frequency-dependent dielectric constant), and electrical transport properties (resistivity and leakage current) through the analysis of a large series of a-BxC:Hy thin films grown by plasma-enhanced chemical vapor deposition from ortho-carborane. The resulting films exhibit a wide range of properties including H concentration from 10% to 45%, density from 0.9 to 2.3 g/cm3, Young's modulus from 10 to 340 GPa, band gap from 1.7 to 3.8 eV, Urbach energy from 0.1 to 0.7 eV, dielectric constant from 3.1 to 7.6, and electrical resistivity from 1010 to 1015 Ω cm. Hydrogen concentration is found to correlate directly with thin-film density, and both are used to map and explain the other material properties. Hardness and Young's modulus exhibit a direct power law relationship with density above ˜1.3 g/cm3 (or below ˜35% H), below which they plateau, providing evidence for a rigidity percolation threshold. An increase in band gap and decrease in dielectric constant with increasing H concentration are explained by a decrease in network connectivity as well as mass/electron density. An increase in disorder, as measured by the parameters EU and B1/2, with increasing H concentration is explained by the release of strain in the network and associated decrease in structural disorder. All of these correlations in a-BxC:Hy are found to be very similar to those

  9. The specific heat of pure and hydrogenated amorphous silicon

    Science.gov (United States)

    Queen, Daniel Robert

    At low temperature, amorphous materials have low energy excitations that result in a heat capacity that is in excess of the Debye heat capacity calculated from the sound velocity. These excitations are ubiquitous to the glassy state and occur with roughly the same density for all glasses. The specific heat has a linear temperature dependence below 1K that has been described by the phenomenological two-level systems (TLS) model in addition to a T 3 temperature dependence which is in excess of the T3 Debye specific heat. It is still unknown what exact mechanism gives rise to the TLS but it is assumed that groups of atoms have configurations that are close in energy and, at low temperature, these atoms can change configurations by tunneling through the energy barrier separating them. It has been an open question as to whether tetrahedrally bonded materials, like amorphous silicon, can support TLS due to the over-constrained nature of their bonding. It is shown in this work that amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) have specific heat CP in excess of the Debye specific heat which depends on the details of the growth process. There is a linear term that is due to TLS in addition to an excess T3 contribution. We find that the TLS density depends on number density of atoms in the a-Si film and that the presence of hydrogen in a-Si:H increases CP further. We suggest that regions of low density are sufficiently under-constrained to support tunneling between structural configurations at low temperature as described by the TLS model. The presence of H further lowers the energy barriers for the tunneling process resulting in an increase in TLS density in a-Si:H. The presence of H in a-Si:H network is found to be metastable. Annealing causes H to diffuse away from clustered regions which reduces the density of TLS. A low temperature anomaly is found in the a-Si:H films in their as prepared state that is of unknown origin but appears to take the

  10. Friction and metal transfer for single-crystal silicon carbide in contact with various metals in vacuum

    Science.gov (United States)

    Miyoshi, K.; Buckley, D. H.

    1978-01-01

    Sliding friction experiments were conducted with single-crystal silicon carbide in contact with transition metals (tungsten, iron, rhodium, nickel, titanium, and cobalt), copper, and aluminum. Results indicate the coefficient of friction for a silicon carbide-metal system is related to the d bond character and relative chemical activity of the metal. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to the surface of silicon carbide in sliding. The chemical activity of metal to silicon and carbon and shear modulus of the metal may play important roles in metal transfer and the form of the wear debris. The less active and greater resistance to shear the metal has, with the exception of rhodium and tungsten, the less transfer to silicon carbide.

  11. atomic layer deposition of amorphous niobium carbide-based thin film superconductors.

    Energy Technology Data Exchange (ETDEWEB)

    Prolier, T.; Klug, J. A.; Elam, J. W.; Claus, H.; Becker, N. G.; Pellin, M. J. (Materials Science Division)

    2011-01-01

    Niobium carbide thin films were synthesized by atomic layer deposition (ALD) using trimethylaluminum (TMA), NbF{sub 5}, and NbCl{sub 5} precursors. In situ quartz crystal microbalance (QCM) measurements performed at 200 and 290 C revealed controlled, linear deposition with a high growth rate of 5.7 and 4.5 {angstrom}/cycle, respectively. The chemical composition, growth rate, structure, and electronic properties of the films were studied over the deposition temperature range 125-350 C. Varying amounts of impurities, including amorphous carbon (a-C), AlF{sub 3}, NbF{sub x}, and NbCl{sub x}, were found in all samples. A strong growth temperature dependence of film composition, growth rate, and room temperature DC resistivity was observed. Increasing film density, decreasing total impurity concentration, and decreasing resistivity were observed as a function of increasing deposition temperature for films grown with either NbF{sub 5} or NbCl{sub 5}. Superconducting quantum interference device (SQUID) magnetometry measurements down to 1.2 K revealed a superconducting transition at T{sub c} = 1.8 K in a 75 nm thick film grown at 350 C with TMA and NbF{sub 5}. The superconducting critical temperature could be increased up to 3.8 K with additional use of NH{sub 3} during ALD film growth.

  12. Atomic layer deposition of amorphous niobium carbide-based thin film superconductors.

    Energy Technology Data Exchange (ETDEWEB)

    Klug, J. A.; Prolier, T.; Elam, J. W.; Becker, N. G.; Pellin, M. J. (Energy Systems); ( HEP); ( MSD); (Illinois Inst. Tech.)

    2011-01-01

    Niobium carbide thin films were synthesized by atomic layer deposition (ALD) using trimethylaluminum (TMA), NbF{sub 5}, and NbCl{sub 5} precursors. In situ quartz crystal microbalance (QCM) measurements performed at 200 and 290 C revealed controlled, linear deposition with a high growth rate of 5.7 and 4.5 {angstrom}/cycle, respectively. The chemical composition, growth rate, structure, and electronic properties of the films were studied over the deposition temperature range 125-350 C. Varying amounts of impurities, including amorphous carbon (a-C), AlF{sub 3}, NbF{sub x}, and NbCl{sub x}, were found in all samples. A strong growth temperature dependence of film composition, growth rate, and room temperature DC resistivity was observed. Increasing film density, decreasing total impurity concentration, and decreasing resistivity were observed as a function of increasing deposition temperature for films grown with either NbF{sub 5} or NbCl{sub 5}. Superconducting quantum interference device (SQUID) magnetometry measurements down to 1.2 K revealed a superconducting transition at T{sub c} = 1.8 K in a 75 nm thick film grown at 350 C with TMA and NbF{sub 5}. The superconducting critical temperature could be increased up to 3.8 K with additional use of NH{sub 3} during ALD film growth.

  13. Electrochemical properties and applications of nanocrystalline, microcrystalline, and epitaxial cubic silicon carbide films.

    Science.gov (United States)

    Zhuang, Hao; Yang, Nianjun; Zhang, Lei; Fuchs, Regina; Jiang, Xin

    2015-05-27

    Microstructures of the materials (e.g., crystallinitiy, defects, and composition, etc.) determine their properties, which eventually lead to their diverse applications. In this contribution, the properties, especially the electrochemical properties, of cubic silicon carbide (3C-SiC) films have been engineered by controlling their microstructures. By manipulating the deposition conditions, nanocrystalline, microcrystalline and epitaxial (001) 3C-SiC films are obtained with varied properties. The epitaxial 3C-SiC film presents the lowest double-layer capacitance and the highest reversibility of redox probes, because of its perfect (001) orientation and high phase purity. The highest double-layer capacitance and the lowest reversibility of redox probes have been realized on the nanocrystalline 3C-SiC film. Those are ascribed to its high amount of grain boundaries, amorphous phases and large diversity in its crystal size. Based on their diverse properties, the electrochemical performances of 3C-SiC films are evaluated in two kinds of potential applications, namely an electrochemical capacitor using a nanocrystalline film and an electrochemical dopamine sensor using the epitaxial 3C-SiC film. The nanocrystalline 3C-SiC film shows not only a high double layer capacitance (43-70 μF/cm(2)) but also a long-term stability of its capacitance. The epitaxial 3C-SiC film shows a low detection limit toward dopamine, which is one to 2 orders of magnitude lower than its normal concentration in tissue. Therefore, 3C-SiC film is a novel but designable material for different emerging electrochemical applications such as energy storage, biomedical/chemical sensors, environmental pollutant detectors, and so on.

  14. Fluorination of silicon carbide thin films using pure F{sub 2} gas or XeF{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Batisse, Nicolas [Laboratoire des Materiaux Inorganiques UMR UBP-CNRS 6002, Clermont Universite, Universite Blaise Pascal, Clermont-Ferrand (France); Guerin, Katia, E-mail: Katia.guerin@univ-bpclermont.f [Laboratoire des Materiaux Inorganiques UMR UBP-CNRS 6002, Clermont Universite, Universite Blaise Pascal, Clermont-Ferrand (France); Dubois, Marc; Hamwi, Andre; Spinelle, Laurent; Tomasella, Eric [Laboratoire des Materiaux Inorganiques UMR UBP-CNRS 6002, Clermont Universite, Universite Blaise Pascal, Clermont-Ferrand (France)

    2010-09-30

    Two fluorination methods: direct fluorination using F{sub 2} gas and fluorination by the decomposition of fluorinating agent XeF{sub 2} have been applied to silicon carbide SiC thin films in order to form a composite of carbide derived carbon film together with residual silicon carbide. Before and after fluorination, the thin films have been characterized by Scanning Electron Microscopy, Rutherford Backscattering spectroscopy, Fourier Transformed InfraRed and Raman spectroscopies. Whereas direct fluorination leads to irreversible damages into the thin films, XeF{sub 2} method allows a progressive etching of the silicon atoms and the formation of non-fluorinated carbon.

  15. Silicon carbide thin films for high temperature microelectromechanical systems

    Science.gov (United States)

    Fleischman, Aaron Judah

    Silicon Carbide (SiC) was studied for use as a material in microelectromechanical systems (MEMS). An APCVD reactor was built to deposit SiC on 100-mm diameter substrates. 3C-SiC films were grown heteroepitaxially atop 100-mm Si wafers. SiC was deposited atop suitable sacrificial layers of polysilicon and thermal oxide. The reactor gas flow was modeled using finite element techniques. The gas flow formed a recirculating pattern, with fresh reactant gases injected at the top of the reactor, traveling down the inside sidewalls and introduced at the bottom of the wafer, forming a plume of heated gases rising to the top of the reactor. This recirculation pattern explains the gradually decreasing growth rate from the wafer's bottom to its top as reactant gases are gradually depleted as they rise. Intentional doping of 3C-SiC films was studied, using diborane and phosphine dopant sources. SIMS indicated that B and P could be incorporated into 3C-SiC films, however B doped films were electrically compensated due to trace amounts of nitrogen in the diborane. Boron concentrations above 3C-SiC's solid solubility caused the SiC to become polycrystalline. Phosphorus incorporation was less predictable and did not vary linearly with phosphine flow rates. A reactive ion etch (REE) process was developed to etch 3C-SiC. Addition of He to the plasma chemistry enhanced the etch rates and etch anisotropy of the 3C-SiC. The etch recipe also produced similar results for polycrystalline SiC on polysilicon and thermal oxide. A maximum SiC etch rate of 1,267 A/min with a selectivity of 1.4 to Si was obtained. Using the above methods, SiC resonant devices were fabricated using polysilicon and thermal oxide as sacrificial layers. Polysilicon resonant devices were fabricated for comparison. The devices were tested by measuring their resonant frequency at room and elevated temperatures to 900°C to determine Young's modulus and its temperature dependence. All devices showed resonant frequency

  16. On the effect of the amorphous silicon microstructure on the grain size of solid phase crystallized polycrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Kashish; Branca, Annalisa; Illiberi, Andrea; Creatore, Mariadriana; Sanden, Mauritius C.M. van de [Department of Applied Physics, Eindhoven University of Technology (Netherlands); Tichelaar, Frans D. [Kavli Institute of Nanoscience, Delft University of Technology (Netherlands)

    2011-05-15

    In this paper the effect of the microstructure of remote plasma-deposited amorphous silicon films on the grain size development in polycrystalline silicon upon solid-phase crystallization is reported. The hydrogenated amorphous silicon films are deposited at different microstructure parameter values R* (which represents the distribution of SiH{sub x} bonds in amorphous silicon), at constant hydrogen content. Amorphous silicon films undergo a phase transformation during solid-phase crystallization and the process results in fully (poly-)crystallized films. An increase in amorphous film structural disorder (i.e., an increase in R*), leads to the development of larger grain sizes (in the range of 700-1100 nm). When the microstructure parameter is reduced, the grain size ranges between 100 and 450 nm. These results point to the microstructure parameter having a key role in controlling the grain size of the polycrystalline silicon films and thus the performance of polycrystalline silicon solar cells. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Microstructure and Mechanical Properties of Reaction-Formed Joints in Reaction Bonded Silicon Carbide Ceramics

    Science.gov (United States)

    Singh, M.

    1998-01-01

    A reaction-bonded silicon carbide (RB-SiC) ceramic material (Carborundum's Cerastar RB-SIC) has been joined using a reaction forming approach. Microstructure and mechanical properties of three types of reaction-formed joints (350 micron, 50-55 micron, and 20-25 micron thick) have been evaluated. Thick (approximately 350 micron) joints consist mainly of silicon with a small amount of silicon carbide. The flexural strength of thick joints is about 44 plus or minus 2 MPa, and fracture always occurs at the joints. The microscopic examination of fracture surfaces of specimens with thick joints tested at room temperature revealed the failure mode to be typically brittle. Thin joints (<50-55 micron) consist of silicon carbide and silicon phases. The room and high temperature flexural strengths of thin (<50-55 micron) reaction-formed joints have been found to be at least equal to that of the bulk Cerastar RB-SIC materials because the flexure bars fracture away from the joint regions. In this case, the fracture origins appear to be inhomogeneities inside the parent material. This was always found to be the case for thin joints tested at temperatures up to 1350C in air. This observation suggests that the strength of Cerastar RB-SIC material containing a thin joint is not limited by the joint strength but by the strength of the bulk (parent) materials.

  18. High Temperature Joining and Characterization of Joint Properties in Silicon Carbide-Based Composite Materials

    Science.gov (United States)

    Halbig, Michael C.; Singh, Mrityunjay

    2015-01-01

    Advanced silicon carbide-based ceramics and composites are being developed for a wide variety of high temperature extreme environment applications. Robust high temperature joining and integration technologies are enabling for the fabrication and manufacturing of large and complex shaped components. The development of a new joining approach called SET (Single-step Elevated Temperature) joining will be described along with the overview of previously developed joining approaches including high temperature brazing, ARCJoinT (Affordable, Robust Ceramic Joining Technology), diffusion bonding, and REABOND (Refractory Eutectic Assisted Bonding). Unlike other approaches, SET joining does not have any lower temperature phases and will therefore have a use temperature above 1315C. Optimization of the composition for full conversion to silicon carbide will be discussed. The goal is to find a composition with no remaining carbon or free silicon. Green tape interlayers were developed for joining. Microstructural analysis and preliminary mechanical tests of the joints will be presented.

  19. Femtosecond Laser Crystallization of Boron-doped Amorphous Hydrogenated Silicon Films

    Directory of Open Access Journals (Sweden)

    P.D. Rybalko

    2016-10-01

    Full Text Available Crystallization of amorphous hydrogenated silicon films with femtosecond laser pulses is one of the promising ways to produce nanocrystalline silicon for photovoltaics. The structure of laser treated films is the most important factor determining materials' electric and photoelectric properties. In this work we investigated the effect of femtosecond laser irradiation of boron doped amorphous hydrogenated silicon films with different fluences on crystalline volume fraction and electrical properties of this material. A sharp increase of conductivity and essential decrease of activation energy of conductivity temperature dependences accompany the crystallization process. The results obtained are explained by increase of boron doping efficiency in crystalline phase of modified silicon film.

  20. Environmental life cycle assessment of roof-integrated flexible amorphous silicon/nanocrystalline silicon solar cell laminate

    NARCIS (Netherlands)

    N.J. Mohr; A. Meijer; M.A.J. Huijbregts; L. Reijnders

    2013-01-01

    This paper presents an environmental life cycle assessment of a roof-integrated flexible solar cell laminate with tandem solar cells composed of amorphous silicon/nanocrystalline silicon (a-Si/nc-Si). The a-Si/nc-Si cells are considered to have 10% conversion efficiency. Their expected service life

  1. Solution growth of microcrystalline silicon on amorphous substrates

    Energy Technology Data Exchange (ETDEWEB)

    Heimburger, Robert

    2010-07-05

    This work deals with low-temperature solution growth of micro-crystalline silicon on glass. The task is motivated by the application in low-cost solar cells. As glass is an amorphous material, conventional epitaxy is not applicable. Therefore, growth is conducted in a two-step process. The first step aims at the spatial arrangement of silicon seed crystals on conductive coated glass substrates, which is realized by means of vapor-liquid-solid processing using indium as the solvent. Seed crystals are afterwards enlarged by applying a specially developed steady-state solution growth apparatus. This laboratory prototype mainly consists of a vertical stack of a silicon feeding source and the solvent (indium). The growth substrate can be dipped into the solution from the top. The system can be heated to a temperature below the softening point of the utilized glass substrate. A temperature gradient between feeding source and growth substrate promotes both, supersaturation and material transport by solvent convection. This setup offers advantages over conventional liquid phase epitaxy at low temperatures in terms of achievable layer thickness and required growth times. The need for convective solute transport to gain the desired thickness of at least 50 {mu}m is emphasized by equilibrium calculations in the binary system indium-silicon. Material transport and supersaturation conditions inside the utilized solution growth crucible are analyzed. It results that the solute can be transported from the lower feeding source to the growth substrate by applying an appropriate heating regime. These findings are interpreted by means of a hydrodynamic analysis of fluid flow and supporting FEM simulation. To ensure thermodynamic stability of all materials involved during steady-state solution growth, the ternary phase equilibrium between molybdenum, indium and silicon at 600 C was considered. Based on the obtained results, the use of molybdenum disilicide as conductive coating

  2. Amorphous silicon carbon films prepared by hybrid plasma enhanced chemical vapor/sputtering deposition system: Effects of r.f. power

    Energy Technology Data Exchange (ETDEWEB)

    Rashid, Nur Maisarah Abdul, E-mail: nurmaisarahrashid@gmail.com [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Ritikos, Richard; Othman, Maisara; Khanis, Noor Hamizah; Gani, Siti Meriam Ab. [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Muhamad, Muhamad Rasat [Chancellery Office, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Rahman, Saadah Abdul, E-mail: saadah@um.edu.my [Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia); Chancellery Office, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia)

    2013-02-01

    Silicon carbon films were deposited using a hybrid radio frequency (r.f.) plasma enhanced chemical vapor deposition (PECVD)/sputtering deposition system at different r.f. powers. This deposition system combines the advantages of r.f. PECVD and sputtering techniques for the deposition of silicon carbon films with the added advantage of eliminating the use of highly toxic silane gas in the deposition process. Silicon (Si) atoms were sputtered from a pure amorphous silicon (a-Si) target by argon (Ar) ions and carbon (C) atoms were incorporated into the film from C based growth radicals generated through the discharge of methane (CH{sub 4}) gas. The effects of r.f. powers of 60, 80, 100, 120 and 150 W applied during the deposition process on the structural and optical properties of the films were investigated. Raman spectroscopic studies showed that the silicon carbon films contain amorphous silicon carbide (SiC) and amorphous carbon (a-C) phases. The r.f. power showed significant influence on the C incorporation in the film structure. The a-C phases became more ordered in films with high C incorporation in the film structure. These films also produced high photoluminescence emission intensity at around 600 nm wavelength as a result of quantum confinement effects from the presence of sp{sup 2} C clusters embedded in the a-SiC and a-C phases in the films. - Highlights: ► Effects of radio frequency (r.f.) power on silicon carbon (SiC) films were studied. ► Hybrid plasma enhanced chemical vapor deposition/sputtering technique was used. ► r.f. power influences C incorporation in the film structure. ► High C incorporation results in higher ordering of the amorphous C phase. ► These films produced high photoluminescence emission intensity.

  3. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells

    Science.gov (United States)

    Wiesmann, H.; Dolan, J.; Fricano, G.; Danginis, V.

    1987-02-01

    A study was undertaken of the optoelectronic properties of amorphous silicon-hydrogen thin films deposited from disilane at high deposition rates. The information derived from this study was used to fabricate amorphous silicon solar cells with efficiencies exceeding 7%. The intrinsic layer of these solar cells was deposited at 15 angstroms/second. Material properties investigated included dark conductivity, photoconductivity, minority carrier diffusion length, and density of states. The solar cells properties characterized were absolute quantum yield and simulated global AM 1.5 efficiencies. Investigations were undertaken utilizing optical and infrared spectroscopy to optimize the microstructures of the intrinsic amorphous silicon. That work was sponsored by the New York State Energy Research and Development Authority. The information was used to optimize the intrinsic layer of amorphous silicon solar cells, resulting in AM 1.5 efficiencies exceeding 7%.

  4. A fax-machine amorphous silicon sensor for X-ray detection

    Energy Technology Data Exchange (ETDEWEB)

    Alberdi, J. [Association EURATOM/CIEMAT, Madrid (Spain); Barcala, J.M. [Association EURATOM/CIEMAT, Madrid (Spain); Chvatchkine, V. [Association EURATOM/CIEMAT, Madrid (Spain); Ioudine, I. [Association EURATOM/CIEMAT, Madrid (Spain); Molinero, A. [Association EURATOM/CIEMAT, Madrid (Spain); Navarrete, J.J. [Association EURATOM/CIEMAT, Madrid (Spain); Yuste, C. [Association EURATOM/CIEMAT, Madrid (Spain)

    1996-10-01

    Amorphous silicon detectors have been used, basically, as solar cells for energetics applications. As light detectors, linear sensors are used in fax and photocopier machines because they can be built with a large size, low price and have a high radiation hardness. Due to these performances, amorphous silicon detectors have been used as radiation detectors, and, presently, some groups are developing matrix amorphous silicon detectors with built-in electronics for medical X-ray applications. Our group has been working on the design and development of an X-ray image system based on a commercial fax linear amorphous silicon detector. The sensor scans the selected area and detects light produced by the X-ray in a scintillator placed on the sensor. Image-processing software produces a final image with better resolution and definition. (orig.).

  5. Growth of Wide-Bandgap Nanocrystalline Silicon Carbide Films by HWCVD: Influence of Filament Temperature on Structural and Optoelectronic Properties

    Science.gov (United States)

    Jha, Himanshu S.; Yadav, Asha; Singh, Mukesh; Kumar, Shailendra; Agarwal, Pratima

    2015-03-01

    Silicon carbide (SiC) thin films have been deposited using a hot-wire chemical vapor deposition technique on quartz substrates with a mixture of silane, methane, and hydrogen gases as precursors at a reasonably high deposition rate of approximately 15 nm/min to 50 nm/min. The influence of the filament temperature ( T F) on the structural, optical, and electrical properties of the SiC film has been investigated using x-ray diffraction, Raman scattering, Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy, ultraviolet-visible-near infrared transmission spectroscopy, and dark conductivity ( σ d) studies. Films deposited at low T F (1800°C to 1900°C) are amorphous in nature with high density of Si-Si bonds, whereas high- T F (≥2000°C) films are nanocrystalline embedded in an amorphous SiC matrix with higher concentration of Si-C bonds and negligible concentration of Si-Si bonds. The bandgap ( E g) varies from 2.5 eV to 3.1 eV and σ d (50°C) from ˜10-9 Ω-1 cm-1 to 10-1 Ω-1 cm-1 as T F is increased from 1900°C to 2200°C. This increase in E g and σ d is due to microstructural changes and unintentional oxygen doping of the films.

  6. Optimization of large amorphous silicon and silica structures for molecular dynamics simulations of energetic impacts

    Energy Technology Data Exchange (ETDEWEB)

    Samela, Juha, E-mail: juha.samela@helsinki.fi [Department of Physics and Helsinki Institute of Physics, University of Helsinki, P.O. Box 43, FI-00014 University of Helsinki (Finland); Norris, Scott A. [Southern Methodist University, Dallas, TX 75205 (United States); Nordlund, Kai [Department of Physics and Helsinki Institute of Physics, University of Helsinki, P.O. Box 43, FI-00014 University of Helsinki (Finland); Aziz, Michael J. [School of Engineering and Applied Sciences, Harvard University, 29 Oxford St., Cambridge, MA 02138 (United States)

    2011-07-15

    A practical method to create optimized amorphous silicon and silica structures for molecular dynamics simulations is developed and tested. The method is based on the Wooten, Winer, and Weaire algorithm and combination of small optimized blocks to larger structures. The method makes possible to perform simulations of either very large cluster hypervelocity impacts on amorphous targets or small displacements induced by low energy ion impacts in silicon.

  7. Anisotropy of the solid-state epitaxy of silicon carbide in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Kukushkin, S. A., E-mail: kukushkin_s@yahoo.com; Osipov, A. V. [Russian Academy of Sciences, Institute of Problems of Machine Science (Russian Federation)

    2013-12-15

    A new method for the solid-state synthesis of epitaxial layers is developed, in which a substrate participates in the chemical reaction and the reaction product grows not on the substrate surface, as in traditional epitaxial methods, but inside the substrate. This method offers new opportunities for elastic-energy relaxation due to a mechanism operating only in anisotropic media, specifically, the attraction of point defects formed during the chemical reaction. The attracting point centers of dilatation form relatively stable objects, dilatation dipoles, which significantly reduce the total elastic energy. It is shown that, in crystals with cubic symmetry, the most favorable arrangement of dipoles is the 〈111〉 direction. The theory is tested by growing silicon carbide (SiC) films on Si (111) substrates by chemical reaction with carbon monoxide CO. High-quality single-crystal SiC-4H films with thicknesses of up to 100 nm are grown on Si (111). Ellipsometric analysis showed that the optical constants of the SiC-4H films are significantly anisotropic. This is caused not only by the lattice hexagonality but also by a small amount (about 2–6%) of carbon atoms remaining in the film due to dilatation dipoles. It is shown that the optical constants of the carbon impurity correspond to strongly anisotropic highly oriented pyrolytic graphite.

  8. Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon

    Institute of Scientific and Technical Information of China (English)

    Liao Yan-Ping; Shao Xi-Bin; Gao Feng-Li; Luo Wen-Sheng; Wu Yuan; Fu Guo-Zhu; Jing Hai; Ma Kai

    2006-01-01

    Polycrystalline silicon (poly-Si) thin film has been prepared by means of nickel-disilicide (NiSi2) assisted excimer laser crystallization (ELC). The process to prepare a sample includes two steps. One step consists of the formation of NiSi2 precipitates by heat-treating the dehydrogenated amorphous silicon (a-Si) coated with a thin layer of Ni. And the other step consists of the formation of poly-Si grains by means of ELC. According to the test results of scanning electron microscopy (SEM), another grain growth model named two-interface grain growth has been proposed to contrast with the conventional Ni-metal-induced lateral crystallization (Ni-MILC) model and the ELC model. That is, an additional grain growth interface other than that in conventional ELC is formed, which consists of NiSi2 precipitates and a-Si.The processes for grain growth according to various excimer laser energy densities delivered to the a-Si film have been discussed. It is discovered that grains with needle shape and most of a uniform orientation are formed which grow up with NiSi2 precipitates as seeds. The reason for the formation of such grains which are different from that of Ni-MILCwithout migration of Ni atoms is not clear. Our model and analysis point out a method to prepare grains with needle shape and mostly of a uniform orientation. If such grains are utilized to make thin-film transistor, its characteristics may be improved.

  9. Laser assisted patterning of hydrogenated amorphous silicon for interdigitated back contact silicon heterojunction solar cell

    Science.gov (United States)

    De Vecchi, S.; Desrues, T.; Souche, F.; Muñoz, D.; Lemiti, M.

    2012-10-01

    This work reports on the elaboration of a new industrial process based on laser selective ablation of dielectric layers for Interdigitated Back Contact Silicon Heterojunction (IBC Si-HJ) solar cells fabrication. Choice of the process is discussed and cells are processed to validate its performance. A pulsed green laser (515nm) with 10-20ns pulse duration is used for hydrogenated amorphous silicon (a-Si:H) layers patterning steps, whereas metallization is made by screen printed. High Open-Circuit Voltage (Voc=699mV) and Fill Factor (FF=78.5%) values are obtained simultaneously on IBC Si-HJ cells, indicating a high surface passivation level and reduced resistive losses. An efficiency of 19% on non textured 26 cm² solar cells has been reached with this new industrial process.

  10. High Temperature All Silicon-Carbide (SiC) DC Motor Drives for Venus Exploration Vehicles Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This Small Business Innovation Research Phase I project seeks to prove the feasibility of creating high-temperature silicon-carbide (SiC) based motor drives for...

  11. Silicon carbide against silicon: a comparison in terms of physical properties, technology and electrical performance of power devices

    OpenAIRE

    Locatelli, M.; Gamal, S.,

    1993-01-01

    The aim of the present paper is to give the state of the art of the silicon carbide technology by “photographing” it beside the unique technology used for power electronics that is the silicon one. The theoretical superiority of SiC physical properties on those of Si, together with the important technological advancements realized during the last decade, are the main reasons of the interest given to SiC nowadays. Concerning electrical performance, the voltage and power handling capabilities d...

  12. Synthesis of silicon carbide coating on diamond by microwave heating of diamond and silicon powder: A heteroepitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Leparoux, S. [Empa, Department of Materials Technology, Feuerwerkerstrasse 39, CH-3602 Thun (Switzerland)], E-mail: susanne.leparoux@empa.ch; Diot, C. [Consultant, allee de Mozart 10, F-92300 Chatillon (France); Dubach, A. [Empa, Department of Materials Technology, Feuerwerkerstrasse 39, CH-3602 Thun (Switzerland); Vaucher, S. [Empa, Department of Materials Technology, Feuerwerkerstrasse 39, CH-3602 Thun (Switzerland)

    2007-10-15

    When a powder mixture of diamond and silicon is heated by microwaves, heteroepitaxial growth of SiC is observed on the (1 1 1) as well as on the (1 0 0) faces of the diamond. The SiC over-layer was characterized by X-ray diffraction and scanning electron microscopy. High-resolution scanning electron microscopy shows the presence of triangular silicon carbide on the (1 1 1) faces of diamond while prismatic crystals are found on the (1 0 0) faces. The crystal growth seems to be favored in the plane parallel to the face (1 1 1)

  13. Carrier transport in amorphous silicon utilizing picosecond photoconductivity

    Science.gov (United States)

    Johnson, A. M.

    1981-08-01

    The development of a high-speed electronic measurement capability permitted the direct observation of the transient photoresponse of amorphous silicon (a-Si) with a time resolution of approximately 10ps. This technique was used to measure the initial mobility of photogenerated (2.1eV) free carriers in three types of a-Si having widely different densities of structural defects (i.e., as prepared by: (1) RF glow discharge (a-Si:H); (2) chemical vapor deposition; and (3) evaporation in ultra-high vacuum). In all three types of a-Si, the same initial mobility of approximately 1 cu cm/Vs at room temperature was found. This result tends to confirm the often-made suggestion that the free carrier mobility is determined by the influence of shallow states associated with the disorder in the random atomic network, and is an intrinsic property of a-Si which is unaffected by the method of preparation. The rate of decay of the photocurrent correlates with the density of structural defects and varies from 4ps to 200ps for the three types of a-Si investigated. The initial mobility of a-Si:H was found to be thermally activated. The possible application of extended state transport controlled by multiple trapping and small polaron formation is discussed.

  14. Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics.

    Science.gov (United States)

    Johlin, Eric; Al-Obeidi, Ahmed; Nogay, Gizem; Stuckelberger, Michael; Buonassisi, Tonio; Grossman, Jeffrey C

    2016-06-22

    While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improved hole collection in thick absorber layers. This is achieved by etching an array of 150 nm diameter holes into intrinsic a-Si:H and then coating the structured material with p-type a-Si:H and a conformal zinc oxide transparent conducting layer. The inclusion of these nanoholes yields relative power conversion efficiency (PCE) increases of ∼45%, from 7.2 to 10.4% PCE for small area devices. Comparisons of optical properties, time-of-flight mobility measurements, and internal quantum efficiency spectra indicate this efficiency is indeed likely occurring from an improved collection pathway provided by the nanostructuring of the devices. Finally, we estimate that through modest optimizations of the design and fabrication, PCEs of beyond 13% should be obtainable for similar devices.

  15. Effects of relaxation on the energy landscape of amorphous silicon

    Science.gov (United States)

    Kallel, Houssem; Mousseau, Normand; Schiettekatte, Francois

    2008-03-01

    Amorphous silicon is used in many devices around us, included as a thin-film transistor in most flat screens, it also serves as the reference for the study of disordered network systems. Recently, differential scanning calorimetry and nanocalorimetry measurements (DSC) ^1 have shown that the heat released as the temperature of the sample is raised following implantation, is temperature independent. To understand this behaviour, we characterize the energy landscape of model a-Si. Using the activation-relaxation technique (ART nouveau) with the modified Stillinger-Weber potential, we generate models at four levels of relaxation and identify the relaxation mechanisms by analysing 100 000 events for each model. We find that while the distribution of the activation barriers shifts to higher energy as the system is relaxed, the distribution of the relaxation energies is almost unchanged. The relation between these two phenomena is consistent with the DSC measurements. This work is supported, in part, by NSERC, FQRNT and the CRC Foundation. HK is grateful for a scholarship from the Tunisian Ministry of Higher Education, Scientific Research and Technology. ^1 R. Karmouch et al., Phys. Rev. B 75, 075304 (2007)

  16. Experiment and Simulation Study on the Amorphous Silicon Photovoltaic Walls

    Directory of Open Access Journals (Sweden)

    Wenjie Zhang

    2014-01-01

    Full Text Available Based on comparative study on two amorphous silicon photovoltaic walls (a-Si PV walls, the temperature distribution and the instant power were tested; and with EnergyPlus software, similar models of the walls were built to simulate annual power generation and air conditioning load. On typical sunshine day, the corresponding position temperature of nonventilated PV wall was generally 0.5~1.5°C higher than that of ventilated one, while the power generation was 0.2%~0.4% lower, which was consistent with the simulation results with a difference of 0.41% in annual energy output. As simulation results, in summer, comparing the PV walls with normal wall, the heat per unit area of these two photovoltaic walls was 5.25 kWh/m2 (nonventilated and 0.67 kWh/m2 (ventilated higher, respectively. But in winter the heat loss of nonventilated one was smaller, while ventilated PV wall was similar to normal wall. To annual energy consumption of heating and cooling, the building with ventilated PV wall and normal wall was also similar but slightly better than nonventilated one. Therefore, it is inferred that, at low latitudes, such as Zhuhai, China, air gap ventilation is suitable, while the length to thickness ratio of the air gap needs to be taken into account.

  17. Diffusion of Gold and Platinum in Amorphous Silicon

    CERN Multimedia

    Voss, T L

    2002-01-01

    By means of radiotracer experiments the diffusion of Au and Pt in radio-frequency-sputtered amorphous silicon (a-Si) was investigated. Specimens of a-Si with homogeneous doping concentrations of Au or Pt in the range 0$\\, - \\,$1,7~at.\\% were produced by co-sputtering of Si and Au or Pt, respectively. An additional tiny concentration of radioactive $^{195}$Au or $^{188}$Pt, about 10~at.ppm, was implanted at ISOLDE. The resulting Gaussian distribution of the implanted atoms served as a probe for measuring diffusion coefficients at various doping concentrations. It was found that for a given doping concentration the diffusion coefficients show Arrhenius-type temperature dependences, where the diffusion enthalpy and the pre-exponential factor depend on the doping concentration. From these results it was concluded that in a-Si Au and Pt undergo direct, interstitial-like diffusion that is retarded by temporary trapping of the radiotracer atoms at vacancy-type defects with different binding enthalpies. In the case o...

  18. Hot wire deposited hydrogenated amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mahan, A.H.; Iwaniczko, E.; Nelson, B.P.; Reedy, R.C. Jr.; Crandall, R.S. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    This paper details the results of a study in which low H content, high deposition rate hot wire (HW) deposited amorphous silicon (a-Si:H) has been incorporated into a substrate solar cell. The authors find that the treatment of the top surface of the HW i layer while it is being cooled from its high deposition temperature is crucial to device performance. They present data concerning these surface treatments, and correlate these treatments with Schottky device performance. The authors also present first generation HW n-i-p solar cell efficiency data, where a glow discharge (GD) {mu}c-Si(p) layer was added to complete the partial devices. No light trapping layer was used to increase the device Jsc. Their preliminary investigations have yielded efficiencies of up to 6.8% for a cell with a 4000 {Angstrom} thick HW i-layer, which degrade less than 10% after a 900 hour light soak. The authors suggest avenues for further improvement of their devices.

  19. Raman spectroscopy of PIN hydrogenated amorphous silicon solar cells

    Science.gov (United States)

    Keya, Kimitaka; Torigoe, Yoshihiro; Toko, Susumu; Yamashita, Daisuke; Seo, Hyunwoong; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu

    2015-09-01

    Light-induced degradation of hydrogenated amorphous silicon (a-Si:H) is a key issue for enhancing competitiveness in solar cell market. A-Si:H films with a lower density of Si-H2 bonds shows higher stability. Here we identified Si-H2 bonds in PIN a-Si:H solar cells fabricated by plasma CVD using Raman spectroscopy. A-Si:H solar cell has a structure of B-doped μc-SiC:H (12.5 nm)/ non-doped a-Si:H (250nm)/ P-doped μc-Si:H (40 nm) on glass substrates (Asahi-VU). By irradiating HeNe laser light from N-layer, peaks correspond to Si-H2 bonds (2100 cm-1) and Si-H bonds (2000 cm-1) have been identified in Raman scattering spectra. The intensity ratio of Si-H2 and Si-H ISiH2/ISiH is found to correlate well to light induced degradation of the cells Therefore, Raman spectroscopy is a promising method for studying origin of light-induced degradation of PIN solar cells.

  20. Progress in amorphous silicon solar cells produced by reactive sputtering

    Science.gov (United States)

    Moustakas, T. D.

    The photovoltaic properties of reactively sputtered amorphous silicon are reviewed and it is shown that efficient PIN solar cells can be fabricated by the method of sputtering. The photovoltaic properties of the intrinsic films correlate with their structural and compositional inhomogeneities. Hydrogen incorporation and small levels of phosphorus and boron impurities also affect the photovoltaic properties through reduction of residual dangling bond related defects and modification of their occupation. The optical and transport properties of the doped P and N-films were found to depend sensitively on the amount of hydrogen and boron or phosphorus incorporation into the films as well as on their degree of crystallinity. Combination of the best intrinsic and doped films leads to PIN solar cell structures generating J(sc) of 13 mA/sq cm and V(oc) of between 0.85 to 0.95 volts. The efficiency of these devices, 5 to 6 percent, is limited by the low FF, typically about 50 percent. As a further test to the potential of this technology efficient tandem solar cell structures were fabricated, and device design concepts, such as the incorporation of optically reflective back contacts were tested.

  1. Mechanical and Corrosion Behaviour of Zn-27Al Based Composites Reinforced with Groundnut Shell Ash and Silicon Carbide

    OpenAIRE

    K.K. Alaneme; B.O. Fatile; J.O. Borode

    2014-01-01

    The mechanical and corrosion behaviour of Zn-27Al alloy based composites reinforced with groundnut shell ash and silicon carbide was investigated. Experimental test composite samples were prepared by melting Zn-27Al alloy with pre-determined proportions of groundnut ash and silicon carbide as reinforcements using double stir casting. Microstructural examination, mechanical properties and corrosion behaviour were used to characterize the composites produced. The results show that hardness and ...

  2. Relation between Modulus of Elasticity and Compressive Strength of Ultrahigh-Strength Mortar with Mixed Silicon Carbide as Fine Aggregate

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Ultrahigh-strength mortar mixed surface-oxidized silicon carbide as a fine aggregate was prepared by means of press-casting followed by curing in an autoclave. The relation between modulus of elasticity up to 111 GPa and compressive strength up to 360 MPa of mortar mixed silicon carbide was discussed and it was revealed that the contributions of the aggregate hardness and of the interfacial strength between the aggregate and the cement paste on the elasticity of mortar were imporant.

  3. Near-infrared luminescent cubic silicon carbide nanocrystals for in vivo biomarker applications: an ab initio study.

    Science.gov (United States)

    Somogyi, Bálint; Zólyomi, Viktor; Gali, Adam

    2012-12-21

    Molecule-sized fluorescent emitters are much sought-after to probe biomolecules in living cells. We demonstrate here by time-dependent density functional calculations that the experimentally achievable 1-2 nm sized silicon carbide nanocrystals can emit light in the near-infrared region after introducing appropriate color centers in them. These near-infrared luminescent silicon carbide nanocrystals may act as ideal fluorophores for in vivo bioimaging.

  4. Composite materials and bodies including silicon carbide and titanium diboride and methods of forming same

    Science.gov (United States)

    Lillo, Thomas M.; Chu, Henry S.; Harrison, William M.; Bailey, Derek

    2013-01-22

    Methods of forming composite materials include coating particles of titanium dioxide with a substance including boron (e.g., boron carbide) and a substance including carbon, and reacting the titanium dioxide with the substance including boron and the substance including carbon to form titanium diboride. The methods may be used to form ceramic composite bodies and materials, such as, for example, a ceramic composite body or material including silicon carbide and titanium diboride. Such bodies and materials may be used as armor bodies and armor materials. Such methods may include forming a green body and sintering the green body to a desirable final density. Green bodies formed in accordance with such methods may include particles comprising titanium dioxide and a coating at least partially covering exterior surfaces thereof, the coating comprising a substance including boron (e.g., boron carbide) and a substance including carbon.

  5. Amorphization and reduction of thermal conductivity in porous silicon by irradiation with swift heavy ions

    Energy Technology Data Exchange (ETDEWEB)

    Newby, Pascal J. [Institut des Nanotechnologies de Lyon, Universite de Lyon, INL-UMR5270, CNRS, INSA de Lyon, Villeurbanne 69621 (France); Institut Interdisciplinaire d' Innovation Technologique (3IT), Universite de Sherbrooke, CNRS UMI-LN2, Sherbrooke, Quebec J1K0A5 (Canada); Canut, Bruno; Bluet, Jean-Marie; Lysenko, Vladimir [Institut des Nanotechnologies de Lyon, Universite de Lyon, INL-UMR5270, CNRS, INSA de Lyon, Villeurbanne 69621 (France); Gomes, Severine [Centre de Thermique de Lyon, Universite de Lyon, CETHIL-UMR5008, CNRS, INSA de Lyon, Villeurbanne 69621 (France); Isaiev, Mykola; Burbelo, Roman [Faculty of Physics, Taras Shevchenko National University of Kyiv, 64/13, Volodymyrs' ka St., Kyiv 01601 (Ukraine); Termentzidis, Konstantinos [Laboratoire LEMTA, Universite de Lorraine-CNRS UMR 7563, 54506 Vandoeuvre-les-Nancy cedex (France); Chantrenne, Patrice [Universite de Lyon, INSA de Lyon, MATEIS-UMR CNRS 5510, Villeurbanne 69621 (France); Frechette, Luc G. [Institut Interdisciplinaire d' Innovation Technologique (3IT), Universite de Sherbrooke, CNRS UMI-LN2, Sherbrooke, Quebec J1K0A5 (Canada)

    2013-07-07

    In this article, we demonstrate that the thermal conductivity of nanostructured porous silicon is reduced by amorphization and also that this amorphous phase in porous silicon can be created by swift (high-energy) heavy ion irradiation. Porous silicon samples with 41%-75% porosity are irradiated with 110 MeV uranium ions at six different fluences. Structural characterisation by micro-Raman spectroscopy and SEM imaging show that swift heavy ion irradiation causes the creation of an amorphous phase in porous Si but without suppressing its porous structure. We demonstrate that the amorphization of porous silicon is caused by electronic-regime interactions, which is the first time such an effect is obtained in crystalline silicon with single-ion species. Furthermore, the impact on the thermal conductivity of porous silicon is studied by micro-Raman spectroscopy and scanning thermal microscopy. The creation of an amorphous phase in porous silicon leads to a reduction of its thermal conductivity, up to a factor of 3 compared to the non-irradiated sample. Therefore, this technique could be used to enhance the thermal insulation properties of porous Si. Finally, we show that this treatment can be combined with pre-oxidation at 300 Degree-Sign C, which is known to lower the thermal conductivity of porous Si, in order to obtain an even greater reduction.

  6. Thermal Fatigue Behavior of Silicon-Carbide-Doped Silver Microflake Sinter Joints for Die Attachment in Silicon/Silicon Carbide Power Devices

    Science.gov (United States)

    Zhang, Hao; Chen, Chuantong; Nagao, Shijo; Suganuma, Katsuaki

    2017-02-01

    We studied the thermal fatigue behavior of submicron silicon carbide particle (SiCp)-doped silver (Ag) microflake sinter joints for die attachment in next-generation power devices. Si dummy chips and direct bonded copper substrates with various metallization schemes were bonded using SiCp-doped Ag microflakes under mild conditions (250°C, 30 min, 0.4 MPa). The SiCp was distributed homogeneously in the porous Ag network and inhibited morphological evolution during thermal cycling tests. The shear strength of as-sintered pure Ag and SiCp-added joints was ˜50 MPa and 35 MPa, respectively. Thermal cycling tests from -40°C to 250°C were conducted for up to 1000 cycles (hours) to characterize the thermostability of the bonded joints. After 1000 cycles, joints with and without SiCp experienced bonding degradation, with shear strength of ˜25 MPa and 20 MPa, respectively. Thus, after 1000 cycles, the shear strength of pure Ag and SiCp-doped joints decreased by 58% and 42%, respectively, compared with their maximum value. Coarsening of porous Ag occurred in pure Ag joints. SiCp addition inhibited morphological evolution of SiCp-doped joints during thermal cycling. However, vertical cracks generated by thermal stress were observed in joints both with and without SiCp, which may limit long-term reliability.

  7. Synthesis of silicon carbide ceramics at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    McMillan, S.M.; Brook, R.J. [Univ. of Oxford (United Kingdom)

    1995-09-01

    This paper reports observations of the direct transformation of a polymeric precursor into amorphous Si-C, and crystalline SiC at low temperatures, and the use of this precursor as a binder for the productin of SiC composites.

  8. The effect of a weak W/SiC interface on the strength of sigma silicon carbide monofilament

    Science.gov (United States)

    Dyos; Shatwell

    1999-11-01

    Fractography studies have shown that the strength-determining flaws in silicon carbide monofilaments are generally at the core/silicon carbide interface or in the vicinity of the outside, carbon-based coating. In tungsten-cored monofilaments like DERA Sigma, the W/SiC flaws primarily determine the strength. Fracture is accompanied by brittle failure of the tungsten. The crack propagates simultaneously outwards through the silicon carbide, inwards through the tungsten and also around the W/SiC interface before being deflected into the tungsten or out through the silicon carbide. Experiments depositing boundary layers between the tungsten and silicon carbide have resulted in significantly different fracture behaviour. The tungsten fails in a ductile manner and the strength-determining flaws are located predominantly at the outside surface of the silicon carbide. This behaviour is discussed in terms of models proposed by E. Martin and W. Curtin. It is thought that the work will ultimately lead to a significantly stronger, tungsten-based monofilament.

  9. Study on Interface Structure and Bond Properties between Cemented Carbide and Tool Steel Blazing with amorphous alloy

    Institute of Scientific and Technical Information of China (English)

    Bao Ming-dong; Xu Jin-fu; Xu Xue-bo; Zou Gui-sheng; Huang Geng-hua

    2004-01-01

    Cemented Carbide YG11C and Tool Steel Crl2MoV was blazed with Ni-base amorphous alloys, QG-1011,MBF-20 and MBF-75, using dynamics thermodynamics analogue testing machine Gleeble 1500D. The effects of brazing temperature, holding time and holding pressure on micro-structure and bond strength were investigated. Results showed that YG11C and Cr12MoV were all wetted well by these three Ni-base alloys, and the bond strength was as high as 220MPa,320MPa, 320MPa respectively. When the blazing temperature was at the point over the melting point 60-70℃ of Ni-base alloy, the holding time was about 2-10min, the suitable pressure was benefit for improving the brazing quality.Microanalysis showed Co in cemented carbide diffused into liquid brazing alloy and formed the Fe-Co solid .solution.

  10. Preparation of fine silicon particles from amorphous silicon monoxide by the disproportionation reaction

    Science.gov (United States)

    Mamiya, Mikito; Takei, Humihiko; Kikuchi, Masae; Uyeda, Chiaki

    2001-07-01

    Fine Si particles have been prepared by the disproportionation reaction of silicon monoxide (SiO), that is: 2SiO→Si+SiO 2. Amorphous powders of SiO are heated between 900°C and 1400°C in a flow of Ar and the obtained specimens are analyzed by X-ray powder diffraction and high-resolution transmission electron microscopy. The treatments between 1000°C and 1300°C for more than 0.5 h result in origination of Si particles dispersed in amorphous oxide media. The particle size varies from 1-3 to 20-40 nm, depending on the heating temperature. Kinetic analyses of the reaction reveal that the activation energy is 1.1 eV (82.1 kJ mol -1). The specimens annealed above 1350°C changes into a mixture of Si and cristobalite, suggesting a solid state transformation in the surrounding oxides from the amorphous to crystalline states.

  11. Realistic inversion of diffraction data for an amorphous solid: The case of amorphous silicon

    Science.gov (United States)

    Pandey, Anup; Biswas, Parthapratim; Bhattarai, Bishal; Drabold, D. A.

    2016-12-01

    We apply a method called "force-enhanced atomic refinement" (FEAR) to create a computer model of amorphous silicon (a -Si) based upon the highly precise x-ray diffraction experiments of Laaziri et al. [Phys. Rev. Lett. 82, 3460 (1999), 10.1103/PhysRevLett.82.3460]. The logic underlying our calculation is to estimate the structure of a real sample a -Si using experimental data and chemical information included in a nonbiased way, starting from random coordinates. The model is in close agreement with experiment and also sits at a suitable energy minimum according to density-functional calculations. In agreement with experiments, we find a small concentration of coordination defects that we discuss, including their electronic consequences. The gap states in the FEAR model are delocalized compared to a continuous random network model. The method is more efficient and accurate, in the sense of fitting the diffraction data, than conventional melt-quench methods. We compute the vibrational density of states and the specific heat, and we find that both compare favorably to experiments.

  12. Fluorescent Silicon Carbide and its Applications in White Light-Emitting Diodes

    DEFF Research Database (Denmark)

    Ou, Yiyu

    This thesis focuses on the optical properties analysis of Donor-Acceptor-Pair (DAP) co-doped Fluorescent Silicon Carbide (f-SiC) as a wavelengthconversion material in white Light-Emitting Diodes (LEDs). Different methods of fabricating surface Antireflective Structures (ARS) on f-SiC to enhance its...... light extraction efficiency are presented. White LEDs are the most promising techniques to replace the conventional lighting sources. A typical white LED consists of a Gallium Nitride (GaN) blue or Ultraviolet (UV) LED stack and a wavelengthconversion material. Silicon Carbide (SiC) has a wide optical...... investigated the impact of surface ARS on colorimetry and light extraction efficiency of f-SiC based white LED. Furthermore, various approaches of fabricating periodic and pseudoperiodic ARS are demonstrated. By introducing ARS, a significant surface reflection suppression and a considerable omnidirectional...

  13. Laser synthesis of silicon carbide powders from silane and hydrocarbon mixtures

    Energy Technology Data Exchange (ETDEWEB)

    Cauchetier, M.; Croix, O.; Luce, M. (CEN Saclay, Gis sur Yvette (France))

    1988-11-01

    Ultrafine silicon carbide powders have been synthesized from mixtures of silane and hydrocarbons (with one to four carbon atoms) irradiated with an unfocused, high-power (1 kW), continuous-wave industrial CO{sub 2} laser. The chemistry of the reaction has been determined by analysis of the gaseous phase, either by infrared spectroscopy or by combined-gas chromatography-mass spectrometry; reaction yields have been determined. A silicon carbide production rate of 30 g/h with a yield > 99% was obtained from silane and acetylene mixtures with a 600-W laser power. An attempt to approach a production rate of 100 g/h at laboratory scale has been successful. Powder characteristics, such as particle size (10 to 50 nm), crystallinity, and stoichiometry can be controlled through optimization of laser intensity, gas pressure, and flow rate. The powders consist of equiaxed particles which exhibit a narrow size distribution.

  14. Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide.

    Science.gov (United States)

    Kraus, H; Soltamov, V A; Fuchs, F; Simin, D; Sperlich, A; Baranov, P G; Astakhov, G V; Dyakonov, V

    2014-07-04

    Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2 centers in the same silicon carbide crystal, which are immune to nonaxial strain fluctuations. Some of them are characterized by nearly temperature independent axial crystal fields, making these centers very attractive for vector magnetometry. Contrarily, the zero-field splitting of another center exhibits a giant thermal shift of -1.1 MHz/K at room temperature, which can be used for thermometry applications. We also discuss a synchronized composite clock exploiting spin centers with different thermal response.

  15. Insight into the mechanisms of chemical doping of graphene on silicon carbide.

    Science.gov (United States)

    Giannazzo, Filippo

    2016-02-19

    Graphene (Gr) is currently the object of intense research investigations, owing to its rich physics and wide potential for applications. In particular, epitaxial Gr on silicon carbide (SiC) holds great promise for the development of new device concepts based on the vertical current transport at Gr/SiC heterointerface. Precise tailoring of Gr workfunction (WF) represents a key requirement for these device structures. In this context, Günes et al (2015 Nanotechnology 26 445702) recently reported a straightforward approach for WF modulation in epitaxial Gr on silicon carbide by using nitric acid solutions at different dilutions. This paper provides a deep insight on the peculiar mechanisms of chemical doping of epitaxial Gr on 4H-SiC(0001), using several characterization techniques (Raman, UPS, AFM) and density functional theory calculations. The relevance of these findings and their perspective applications in emerging device concepts based on monolithic integration of Gr and SiC will be discussed.

  16. Mechanical properties of chiral and achiral silicon carbide nanotubes under oxygen chemisorption.

    Science.gov (United States)

    Ansari, R; Mirnezhad, M; Hosseinzadeh, M

    2015-03-01

    In this paper, the mechanical properties of fully oxygenated silicon carbide nanotubes (O2-SiCNTs) are explored using a molecular mechanics model joined with the density functional theory (DFT). The closed-form analytical expressions suggested in this study can easily be adapted for nanotubes with different chiralities. The force constants of molecular mechanics model proposed herein are derived through DFT within a generalized gradient approximation. Moreover, the mechanical properties of fully oxygenated silicon carbide (O2-SiC) sheet are evaluated for the case that the oxygen atoms are adsorbed on one side of the SiC sheet. According to the results obtained for the bending stiffness of O2-SiC sheet, one can conclude that the O2-SiC sheet has isotropic characteristics.

  17. Mass production of beta-silicon carbide nanofibers by the novel method of Forcespinning

    Science.gov (United States)

    Salinas, Alfonso

    Non-oxide Ceramics such as silicon carbide have very unique properties, for example high toughness, thermal stability, wear resistant, and thermal shock resistance these properties make these ceramic fibers excellent for high temperature applications. Here we present the development of Silicon Carbide nanofibers utilizing a Polystyrene/Polycarbomethylsilane solution as the precursor materials. The ForcespinningRTM was performed under a controlled nitrogen environment to prevent fiber oxidation. Characterization was conducted using scanning electron microscopy, x-ray diffraction, and thermogravimetric analysis. The results show successful formation of high yield, long continuous bead-free nanofibers with diameters ranging from 280nm to 2 micron depending on the selected processing parameters. The sintered precursors show formation of SiC nanofibers with a beta phase crystalline structure and oxygen content below 15%.

  18. Influence of Nanosized Silicon Carbide on Dimensional Stability of Al/SiC Nanocomposite

    Directory of Open Access Journals (Sweden)

    S. M. Zebarjad

    2008-01-01

    Full Text Available This study concentrated on the role of particle size of silicon carbide (SiC on dimensional stability of aluminum. Three kinds of Al/SiC composite reinforced with different SiC particle sizes (25 μm, 5 μm, and 70 nm were produced using a high-energy ball mill. The standard samples were fabricated using powder metallurgy method. The samples were heated from room temperature up to 500∘C in a dilatometer at different heating rates, that is, 10, 30, 40, and 60∘C/min. The results showed that for all materials, there was an increase in length change as temperature increased and the temperature sensitivity of aluminum decreased in the presence of both micro- and nanosized silicon carbide. At the same condition, dimensional stability of Al/SiC nanocomposite was better than conventional Al/SiC composites.

  19. Effect of Density and Surface Roughness on Optical Properties of Silicon Carbide Optical Components

    Institute of Scientific and Technical Information of China (English)

    LIU Gui-Ling; HUANG Zheng-Ren; LIU Xue-Jian; JIANG Dong-Liang

    2008-01-01

    @@ The effect of density and surface roughness on the optical properties of silicon carbide optical components is investigated.The density is the major factor of the total reflectance while the surface roughness is the major factor of the diffuse reflectance.The specular reflectance of silicon carbide optical components can be improved by increasing the density and decreasing the surface roughness,in the form of reducing bulk absorption and surface-related scattering,respectively.The contribution of the surface roughness to the specular reflectance is much greater than that of the density.When the rms surface roughness decreases to 2.228nm,the specular reflectance decreases to less than 0.7% accordingly.

  20. Densification studies of silicon carbide-based ceramics with yttria, silica and alumina as sintering additives

    Directory of Open Access Journals (Sweden)

    J. Marchi

    2001-10-01

    Full Text Available Silicon carbide has been extensively used in structural applications, especially at high temperatures. In this work, Y2O3, Al2O3 and SiO2 were added to beta-SiC in order to obtain highly dense ceramics. Sintering was conducted in a dilatometer and in a graphite resistance furnace and the densification behaviour was studied. Sintered samples were characterised by density measurements, the crystalline phases were identified by X-ray diffraction. Microstructural observation of polished and polished/etched samples was carried out with help of scanning electron microscopy. Silicon carbide ceramics with more than 90% of the theoretical density were obtained by pressureless sintering if a suitable proportion of the additives is used.

  1. The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad

    2012-01-01

    Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program

  2. Irradiation creep of nano-powder sintered silicon carbide at low neutron fluences

    Energy Technology Data Exchange (ETDEWEB)

    Koyanagi, Takaaki [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Shimoda, Kazuya [Kyoto Univ., Kyoto (Japan); Kondo, Sosuke [Kyoto Univ., Kyoto (Japan); Hinoki, Tatsuya [Kyoto Univ., Kyoto (Japan); Ozawa, Kazumi [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Katoh, Yutai [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

    2014-12-01

    The irradiation creep behavior of nano-powder sintered silicon carbide was investigated using the bend stress relaxation method under neutron irradiation up to 1.9 dpa. The creep deformation was observed at all temperatures ranging from 380 to 1180 °C mainly from the irradiation creep but with the increasing contributions from the thermal creep at higher temperatures. Microstructural observation and data analysis were performed.

  3. Silicon carbide whisker composites. (Latest citations from Engineered Materials abstracts). NewSearch

    Energy Technology Data Exchange (ETDEWEB)

    1994-11-01

    The bibliography contains citations concerning the manufacture and applications of silicon carbide whisker reinforced composites. Citations discuss the preparation of whiskers and the processing of composites containing the whiskers. Applications include aerospace engines, automotive components, engine components, and surgical implants. Physical properties such as bending strength, crack propagation, creep, fracture toughness, and stress strain curves are covered. Ceramic matrix, metal matrix, and carbon-carbon composites are examined. (Contains a minimum of 248 citations and includes a subject term index and title list.)

  4. Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

    OpenAIRE

    Sangchoel Kim; Jehoon Choi; Minsoo Jung; Seongjeen Kim; Sungjae Joo

    2013-01-01

    We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate ...

  5. Near-Field Radiative Heat Transfer between Metamaterials coated with Silicon Carbide Film

    OpenAIRE

    Basu, Soumyadipta; YANG, YUE; Wang, Liping

    2014-01-01

    In this letter, we study the near-field radiative heat transfer between two metamaterial substrates coated with silicon carbide (SiC) thin films. It is known that metamaterials can enhance the near-field heat transfer over ordinary materials due to excitation of magnetic plasmons associated with s polarization, while strong surface phonon polariton exists for SiC.By careful tuning of the optical properties of metamaterial it is possible to excite electrical and magnetic resonance for the meta...

  6. Synthesis of silicon carbide nanowires in a catalyst-assisted process

    Science.gov (United States)

    Deng, S. Z.; Wu, Z. S.; Zhou, Jun; Xu, N. S.; Chen, Jian; Chen, Jun

    2002-04-01

    At elevated temperatures, silicon carbide nanowires were synthesized in a catalyst-assisted process using aluminum as a catalyst. Transmission electron microscopy shows that the nanowires are around 20 nm in diameter and around 2 μm in length. High resolution transmission electron microscopy shows that the nanowires are crystalline β-SiC. Raman spectra show the typical features of nano-SiC. A model based on vapor-liquid-solid process is proposed to explain our finding.

  7. Effect of thermomechanical treatments on the aging response of centrifugally cast silicon carbide/aluminum composites

    OpenAIRE

    May, Christopher William

    1992-01-01

    Approved for public release; distribution is unlimited Differential scanning calorimetry was conducted using centrifugally cast monolithic A3356 aluminum material and 26 volume present silicon carbide (SiC) particle reinforced A356 aluminum matrix composite material in as-cast, cast and rolled, and cast and extruded conditions. Electrical resistivity and matrix micro-hardness measurements during isothermal aging treatments were also conducted. The effects of thermo-mechanical processing ...

  8. High Power Silicon Carbide (SiC) Power Processing Unit Development

    Science.gov (United States)

    Scheidegger, Robert J.; Santiago, Walter; Bozak, Karin E.; Pinero, Luis R.; Birchenough, Arthur G.

    2015-01-01

    NASA GRC successfully designed, built and tested a technology-push power processing unit for electric propulsion applications that utilizes high voltage silicon carbide (SiC) technology. The development specifically addresses the need for high power electronics to enable electric propulsion systems in the 100s of kilowatts. This unit demonstrated how high voltage combined with superior semiconductor components resulted in exceptional converter performance.

  9. Dangling bond energetics in carbon nitride and phosphorus carbide thin films with fullerene-like and amorphous structure

    OpenAIRE

    Kostov Gueorguiev, Gueorgui; Broitman, E; Furlan, Andrej; Stafström, Sven; Hultman, Lars

    2009-01-01

    The energy cost for dangling bond formation in Fullerene-like Carbon Nitride (FL-CNx) and Phosphorus carbide (FL-CPx) as well as their amorphous counterparts: a-CNx, a-CPx, and a-C has been calculated within the framework of Density Functional Theory and compared with surface water adsorption measurements. The highest energy cost is found in the FL-CNx ( about 1.37 eV) followed by FL-CPx compounds (0.62-1.04 eV). (C) 2009 Elsevier B. V. All rights reserved. Original Publication:Gueorgui K...

  10. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  11. Rf-plasma synthesis of nanosize silicon carbide and nitride. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Buss, R.J.

    1997-02-01

    A pulsed rf plasma technique is capable of generating ceramic particles of 10 manometer dimension. Experiments using silane/ammonia and trimethylchlorosilane/hydrogen gas mixtures show that both silicon nitride and silicon carbide powders can be synthesized with control of the average particle diameter from 7 to 200 nm. Large size dispersion and much agglomeration appear characteristic of the method, in contrast to results reported by another research group. The as produced powders have a high hydrogen content and are air and moisture sensitive. Post-plasma treatment in a controlled atmosphere at elevated temperature (800{degrees}C) eliminates the hydrogen and stabilizes the powder with respect to oxidation or hydrolysis.

  12. Epitaxy of nanocrystalline silicon carbide on Si(111) at room temperature.

    Science.gov (United States)

    Verucchi, Roberto; Aversa, Lucrezia; Nardi, Marco V; Taioli, Simone; a Beccara, Silvio; Alfè, Dario; Nasi, Lucia; Rossi, Francesca; Salviati, Giancarlo; Iannotta, Salvatore

    2012-10-24

    Silicon carbide (SiC) has unique chemical, physical, and mechanical properties. A factor strongly limiting SiC-based technologies is the high-temperature synthesis. In this work, we provide unprecedented experimental and theoretical evidence of 3C-SiC epitaxy on silicon at room temperature by using a buckminsterfullerene (C(60)) supersonic beam. Chemical processes, such as C(60) rupture, are activated at a precursor kinetic energy of 30-35 eV, far from thermodynamic equilibrium. This result paves the way for SiC synthesis on polymers or plastics that cannot withstand high temperatures.

  13. Kinetics of thermal oxidation of 6H silicon carbide in oxygen plus trichloroethylene

    OpenAIRE

    Yang, BL; Lin, LM; Lo, HB; Lai, PT; Chan, CL

    2005-01-01

    In this work, the behaviors of the trichloroethylene (TCE) thermal oxidation of 6H silicon carbide (SiC) are investigated. The oxide growth of 6H SiC under different TCE concentrations (ratios of TCE to O2) follows the linear-parabolic oxidation law derived for silicon oxidation by Deal and Grove, J. Appl. Phys., 36 (1965). The oxidation rate with TCE is much higher than that without TCE and strongly depends on the TCE ratio in addition to oxidation temperature and oxidation time. The increas...

  14. Feasibility of Electrochemical Deposition of Nickel/Silicon Carbide Fibers Composites over Nickel Superalloys

    Science.gov (United States)

    Ambrosio, E. P.; Abdul Karim, M. R.; Pavese, M.; Biamino, S.; Badini, C.; Fino, P.

    2017-02-01

    Nickel superalloys are typical materials used for the hot parts of engines in aircraft and space vehicles. They are very important in this field as they offer high-temperature mechanical strength together with a good resistance to oxidation and corrosion. Due to high-temperature buckling phenomena, reinforcement of the nickel superalloy might be needed to increase stiffness. For this reason, it was thought to investigate the possibility of producing composite materials that might improve properties of the metal at high temperature. The composite material was produced by using electrochemical deposition method in which a composite with nickel matrix and long silicon carbide fibers was deposited over the nickel superalloy. The substrate was Inconel 718, and monofilament continuous silicon carbide fibers were chosen as reinforcement. Chemical compatibility was studied between Inconel 718 and the reinforcing fibers, with fibers both in an uncoated condition, and coated with carbon or carbon/titanium diboride. Both theoretical calculations and experiments were conducted, which suggested the use of a carbon coating over the fibers and a buffer layer of nickel to avoid unwanted reactions between the substrate and silicon carbide. Deposition was then performed, and this demonstrated the practical feasibility of the process. Yield strength was measured to detect the onset of interface debonding between the substrate and the composite layer.

  15. Hollow silicon carbide nanoparticles from a non-thermal plasma process

    Science.gov (United States)

    Coleman, Devin; Lopez, Thomas; Yasar-Inceoglu, Ozgul; Mangolini, Lorenzo

    2015-05-01

    We demonstrate the synthesis of hollow silicon carbide nanoparticles via a two-step process involving the non-thermal plasma synthesis of silicon nanoparticles, followed by their in-flight carbonization, also initiated by a non-thermal plasma. Simple geometric considerations associated with the expansion of the silicon lattice upon carbonization, in combination of the spherical geometry of the system, explain the formation of hollow nanostructures. This is in contrast with previous reports that justify the formation of hollow particles by means of out-diffusion of the core element, i.e., by the Kirkendall nanoscale effect. A theoretical analysis of the diffusion kinetics indicates that interaction with the ionized gas induces significant nanoparticle heating, allowing for the fast transport of carbon into the silicon particle and for the subsequent nucleation of the beta-silicon carbide phase. This work confirms the potential of non-thermal plasma processes for the synthesis of nanostructures composed of high-melting point materials, and suggests that such processes can be tuned to achieve morphological control.

  16. Low Temperature Hall Measurements of Neutron Irradiated Silicon Carbide

    Science.gov (United States)

    2004-03-01

    neutron absorption cross section . Silicon and carbon both possess small neutron absorption cross sections. Additionally, most silicon and...0 4 1.0E+0 5 1.0E+0 6 1.0E+0 7 1.0E+0 8 Neutron Energy [eV] C a p tu re C ro ss S e ct io n [ b a rn s] Figure 17: Cadmium neutron absorption cross section as... absorption cross section as a function of energy. Cadmium has the unique property of a large thermal cross

  17. Microalloying Boron Carbide with Silicon to Achieve Dramatically Improved Ductility.

    Science.gov (United States)

    An, Qi; Goddard, William A

    2014-12-01

    Boron carbide (B4C) is a hard material whose value for extended engineering applications such as body armor; is limited by its brittleness under impact. To improve the ductility while retaining hardness, we used density functional theory to examine modifying B4C ductility through microalloying. We found that replacing the CBC chain in B4C with Si-Si, denoted as (B11Cp)-Si2, dramatically improves the ductility, allowing a continuous shear to a large strain of 0.802 (about twice of B4C failure strain) without brittle failure. Moreover, (B11C)-Si2 retains low density and high hardness. This ductility improvement arises because the Si-Si linkages enable the icosahedra accommodate additional shear by rotating instead of breaking bonds.

  18. Silicon Carbide Micro-devices for Combustion Gas Sensing under Harsh Conditions

    Energy Technology Data Exchange (ETDEWEB)

    Ruby N. Ghosh; Reza Loloee; Roger G. Tobin; Yung Ho Kahng

    2006-04-01

    A sensor based on the wide bandgap semiconductor, silicon carbide (SiC), has been developed for the detection of combustion products in power plant environments. The sensor is a catalytic gate field effect device that can detect hydrogen-containing species in chemically reactive, high temperature environments. For fast and stable sensor response measurements, a gate activation process is required. Activation of all sensors took place by switching back and forth between oxidizing (1.0% oxygen in nitrogen) and reducing (10% hydrogen in nitrogen) gases for several hours at a sensor temperature {ge}620 C. All 52 devices on the sensor chip were activated simultaneously by flooding the entire chip with gas. The effects of activation on surface morphology and structure of Pt gates before and after activation were investigated. The optical images obtained from Pt gates demonstrated a clear transition from a smooth and shiny surface to a grainy and cloudy surface morphology. XRD scans collected from Pt gates suggest the presence of an amorphous layer and species other than Pt (111) after activation. The reliability of the gate insulator of our metal-oxide-SiC sensors for long-term device operation at 630 C was studied. We find that the dielectric is stable against breakdown due to electron injection from the substrate with gate leakage current densities as low at 5nA/cm{sup 2} at 630 C. We also designed and constructed a new nano-reactor capable of high gas flow rates at elevated pressure. Our reactor, which is a miniature version of an industrial reactor, is designed to heat the flowing gas up to 700 C. Measurements in ultrahigh vacuum demonstrated that hydrogen sulfide readily deposits sulfur on the gate surface, even at the very high hydrogen/hydrogen sulfide ratios (10{sup 3}-10{sup 5}) expected in applications. Once deposited, the sulfur adversely affects sensor response, and could not be removed by exposure to hydrogen at the temperatures and pressures accessible in

  19. The influence of hydrogen on the chemical, mechanical, optical/electronic, and electrical transport properties of amorphous hydrogenated boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Nordell, Bradley J.; Karki, Sudarshan; Nguyen, Thuong D.; Rulis, Paul; Caruso, A. N.; Paquette, Michelle M., E-mail: paquettem@umkc.edu [Department of Physics and Astronomy, University of Missouri-Kansas City, Kansas City, Missouri 64110 (United States); Purohit, Sudhaunshu S. [Department of Chemistry, University of Missouri-Kansas City, Kansas City, Missouri 64110 (United States); Li, Han; King, Sean W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); Dutta, Dhanadeep; Gidley, David [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Lanford, William A. [Department of Physics, University at Albany, Albany, New York 12222 (United States)

    2015-07-21

    Because of its high electrical resistivity, low dielectric constant (κ), high thermal neutron capture cross section, and robust chemical, thermal, and mechanical properties, amorphous hydrogenated boron carbide (a-B{sub x}C:H{sub y}) has garnered interest as a material for low-κ dielectric and solid-state neutron detection applications. Herein, we investigate the relationships between chemical structure (atomic concentration B, C, H, and O), physical/mechanical properties (density, porosity, hardness, and Young's modulus), electronic structure [band gap, Urbach energy (E{sub U}), and Tauc parameter (B{sup 1/2})], optical/dielectric properties (frequency-dependent dielectric constant), and electrical transport properties (resistivity and leakage current) through the analysis of a large series of a-B{sub x}C:H{sub y} thin films grown by plasma-enhanced chemical vapor deposition from ortho-carborane. The resulting films exhibit a wide range of properties including H concentration from 10% to 45%, density from 0.9 to 2.3 g/cm{sup 3}, Young's modulus from 10 to 340 GPa, band gap from 1.7 to 3.8 eV, Urbach energy from 0.1 to 0.7 eV, dielectric constant from 3.1 to 7.6, and electrical resistivity from 10{sup 10} to 10{sup 15} Ω cm. Hydrogen concentration is found to correlate directly with thin-film density, and both are used to map and explain the other material properties. Hardness and Young's modulus exhibit a direct power law relationship with density above ∼1.3 g/cm{sup 3} (or below ∼35% H), below which they plateau, providing evidence for a rigidity percolation threshold. An increase in band gap and decrease in dielectric constant with increasing H concentration are explained by a decrease in network connectivity as well as mass/electron density. An increase in disorder, as measured by the parameters E{sub U} and B{sup 1/2}, with increasing H concentration is explained by the release of strain in the network and associated decrease in

  20. Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

    Directory of Open Access Journals (Sweden)

    Kyosuke Seya

    2015-01-01

    Full Text Available The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.

  1. Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Wan, Yimao, E-mail: yimao.wan@anu.edu.au; Yan, Di; Bullock, James; Zhang, Xinyu; Cuevas, Andres [Research School of Engineering, The Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

    2015-12-07

    A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiN{sub x}) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiN{sub x} stack, recombination current density J{sub 0} values of 9, 11, 47, and 87 fA/cm{sup 2} are obtained on 10 Ω·cm n-type, 0.8 Ω·cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J{sub 0} on n-type 10 Ω·cm wafers is further reduced to 2.5 ± 0.5 fA/cm{sup 2} when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiN{sub x} stack is thermally stable at 400 °C in N{sub 2} for 60 min on all four c-Si surfaces. Capacitance–voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiN{sub x} stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.

  2. Performance improvement in amorphous silicon based uncooled microbolometers through pixel design and materials development

    Science.gov (United States)

    Ajmera, Sameer; Brady, John; Hanson, Charles; Schimert, Tom; Syllaios, A. J.; Taylor, Michael

    2011-06-01

    Uncooled amorphous silicon microbolometers have been established as a field-worthy technology for a broad range of applications where performance and form factor are paramount, such as soldier-borne systems. Recent developments in both bolometer materials and pixel design at L-3 in the 17μm pixel node have further advanced the state-of-the-art. Increasing the a-Si material temperature coefficient of resistance (TCR) has the impact of improving NETD sensitivity without increasing thermal time constant (TTC), leading to an improvement in the NETD×TTC product. By tuning the amorphous silicon thin-film microstructure using hydrogen dilution during deposition, films with high TCR have been developed. The electrical properties of these films have been shown to be stable even after thermal cycling to temperatures greater than 300oC enabling wafer-level vacuum packaging currently performed at L-3 to reduce the size and weight of the vacuum packaged unit. Through appropriate selection of conditions during deposition, amorphous silicon of ~3.4% TCR has been integrated into the L-3 microbolometer manufacturing flow. By combining pixel design enhancements with improvements to amorphous silicon thin-film technology, L-3's amorphous silicon microbolometer technology will continue to provide the performance required to meet the needs to tomorrow's war-fighter.

  3. Isotopic heterogeneity in synthetic and natural silicon carbide

    OpenAIRE

    Shiryaev, A. A.; Michael Wiedenbeck; Reutsky, V.; Polyakov, V.B.; Mel'nik, N. N.; Lebedev, A. A.; Yakimova, R.

    2008-01-01

    The distribution of both carbon and silicon isotopes in synthetic sublimation growth SiC wafers and in natural SiC grains was studied using secondary ion mass-spectrometry (SIMS). Significant variations in both isotopic ratios were observed which were broadly correlated with the crystalline perfection as documented by Raman microspectroscopy. Domains consisting of 15R (or with its admixture) are, on average, enriched in 12C isotope relative to 6H domains, and they also show larger scatter in ...

  4. Ohmic Contacts for High Temperature Integrated Circuits in Silicon Carbide

    OpenAIRE

    2014-01-01

    In electrical devices and integrated circuits, ohmic contacts are necessary and a prerequisite for the current transport over the metal-semiconductor junctions. At the same time, a desired property of the ohmic contacts is to not add resistance or in other way disturb the performance. For high temperature electronics, the material demands are high regarding functionality and stability at elevated working temperatures, during and after temperature cycling and during long time of use.  Silicon ...

  5. Investigation on the preparation of Si/mullite/Yb_2Si_2O_7 environmental barrier coatings onto silicon carbide

    Institute of Scientific and Technical Information of China (English)

    许越; 闫钊通

    2010-01-01

    With the development of aero-engine,gas import temperatures of hot section structural materials are increasingly higher.Metal alloy materials due to the rapidly decreased mechanical properties at relative high temperature are gradually replaced with silicon-based non-oxide silicon carbide ceramics.However,silicon carbide ceramic materials tend to spall and deform in engine combustion environment,need environmental barrier coatings for the protection of the matrix.The preparation of Si/mullite/Yb2Si2O7 envir...

  6. Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

    CERN Document Server

    Bracher, David O; Hu, Evelyn L

    2016-01-01

    Point defects in silicon carbide are rapidly becoming a platform of great interest for single photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCC) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of >80-fold are measured using multiple techniques. Additionally, the nature of the cavity coupling to the different ZPLs is examined.

  7. Titanium Carbide and Silicon Carbide Thermal Conductivity under Heavy Ions Irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Cabrero, J.; Weisbecker, P.; Pailler, R. [LCTS, F-33600 Pessac (France); Cabrero, J.; Audubert, F. [CEA Cadarache, DEN 13108 Saint Paul Iez Durance (France); Kusiak, A. [TREFLE, Esplanade des Arts et Metiers 33405 Talence Cedex (France)

    2010-07-01

    SiC(f)/SiC ceramic matrix composites (CMC) are considered as structural materials in next generation fission nuclear reactors. However, thermal conductivity of SiC is reduced on the one hand at the highest temperatures, but also under irradiation. Titanium carbide, because of its peculiar thermal properties is an attractive material to be used as a matrix in a CMC to enhance the thermal conductivity of CMC under irradiation and at high temperature. In this study, we performed irradiation experiments on TiC, TiC{sub x}SiC{sub 1-x} and SiC samples, with heavy ions at room temperature (74 MeV Kr, fluence from 10{sup 13} to 10{sup 15} ions/cm{sup 2}). This energy results in an irradiated layer of about 7 {mu}m for TiC. Thermal conductivity of the irradiated layer is measured using IR radiometry as a function of fluence and composition. The structural evolution of the irradiated samples was investigated by Raman micro spectroscopy and transmission electron microscopy. (authors)

  8. Analysis of Microstructure of Silicon Carbide Fiber by Raman Spectroscopy

    Institute of Scientific and Technical Information of China (English)

    Baohong JIN; Nanlin SHI

    2008-01-01

    The SiC fiber was prepared by chemical vapour depostion, which consists of tungsten core, SiC layer and carbon coating. The microstructure of the fiber was investigated using Raman spectroscopy, illustrating SiC variation in different region of the fiber. The result shows that the SiC layer can be subdivided into two parts in the morphologies of SiC grains; their sizes increase and their orientations become order with increasing distance from the fiber center. It is demonstrated that the mount of free carbon in the fiber is responsible for the variation of SiC grains in sizes and morphologies. The analysis of Raman spectra shows that the predominant β-SiC has extensive stacking faults within the crystallites and mixes other polytypes and amorphous SiC into the structure in the fiber.

  9. Effect of light trapping in an amorphous silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Iftiquar, S.M., E-mail: iftiquar@skku.edu [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Juyeon; Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Cho, Jaehyun; Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Jinjoo [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Bong, Sungjae [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Sunbo [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2015-07-31

    Light trapping in amorphous silicon based solar cell has been investigated theoretically. The substrate for these cells can be textured, including pyramidally textured c-Si wafer, to improve capture of incident light. A thin silver layer, deposited on the substrate of an n–i–p cell, ultimately goes at the back of the cell structure and can act a back reflector to improve light trapping. The two physical solar cells we investigated had open circuit voltages (V{sub oc}) of 0.87, 0.90 V, short circuit current densities (J{sub sc}) of 14.2, 15.36 mA/cm{sup 2} respectively. The first cell was investigated for the effect on its performance while having and not having light trapping scheme (LT), when thickness of the active layer (d{sub i}) was changed in the range of 100 nm to 800 nm. In both the approaches, for having or not having LT, the short circuit current density increases with d{sub i} while the V{sub oc} and fill factor, decreases steadily. However, maximum cell efficiency can be obtained when d{sub i} = 400 nm, and hence it was considered optimized thickness of the active layer, that was used for further investigation. With the introduction of light trapping to the second cell, it shows a further enhancement in J{sub sc} and red response of the external quantum efficiency to 16.6 mA/cm{sup 2} and by 11.1% respectively. Considering multiple passages of light inside the cell, we obtained an improvement in cell efficiency from 9.7% to 10.6%. - Highlights: • A theoretical analysis of light trapping in p–i–n and n–i–p type solar cells • J{sub sc} increases and V{sub oc} decreases with the increase in i-layer thickness. • Observed optimized thickness of i-layer as 400 nm • J{sub sc} improved from 15.4 mA/cm{sup 2} to 16.6 mA/cm{sup 2} due to the light trapping. • Efficiency (η) improved from 9.7% to 10.6% due to better red response of the EQE.

  10. Silicon carbide, v.1 growth, defects, and novel applications

    CERN Document Server

    Friedrichs, Peter; Ley, Lothar

    2011-01-01

    This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a

  11. Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide

    Science.gov (United States)

    Fuchs, F.; Stender, B.; Trupke, M.; Simin, D.; Pflaum, J.; Dyakonov, V.; Astakhov, G. V.

    2015-07-01

    Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.

  12. Preparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Thin films of silicon carbide nitride (SiCN) were prepared on (111) oriented silicon substrates by pulsed high-energy density plasma (PHEDP). The evolution of the chemical bonding states between silicon, nitrogen and carbon was investigated as a function of discharge voltage using X-ray photoelectron spectroscopy. With an increase in discharge voltage both the C1s and N 1s spectra shift to lower binding energy due to the formation of C-Si and N-Si bonds. The Si-C-N bonds were observed in the deconvolved C1s and N 1s spectra. The X-ray diffractometer (XRD) results show that there were no crystals in the films. The thickness of the films was approximately 1-2 μm with scanning electron microscopy (SEM).

  13. Stable, high-efficiency amorphous silicon solar cells with low hydrogen content

    Energy Technology Data Exchange (ETDEWEB)

    Fortmann, C.M.; Hegedus, S.S. (Institute of Energy Conversion, Newark, DE (United States))

    1992-12-01

    Results and conclusions obtained during a research program of the investigation of amorphous silicon and amorphous silicon based alloy materials and solar cells fabricated by photo-chemical vapor and glow discharge depositions are reported. Investigation of the effects of the hydrogen content in a-si:H i-layers in amorphous silicon solar cells show that cells with lowered hydrogen content i-layers are more stable. A classical thermodynamic formulation of the Staebler-Wronski effect has been developed for standard solar cell operating temperatures and illuminations. Methods have been developed to extract a lumped equivalent circuit from the current voltage characteristic of a single junction solar cell in order to predict its behavior in a multijunction device.

  14. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors

    Science.gov (United States)

    Marrs, Michael A.; Raupp, Gregory B.

    2016-01-01

    Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm2 and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate. PMID:27472329

  15. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors

    Directory of Open Access Journals (Sweden)

    Michael A. Marrs

    2016-07-01

    Full Text Available Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm2 and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

  16. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors.

    Science.gov (United States)

    Marrs, Michael A; Raupp, Gregory B

    2016-07-26

    Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm² and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

  17. Infrared Insight into the Network of Hydrogenated Amorphous and Polycrystalline Silicon thin Films

    Directory of Open Access Journals (Sweden)

    Jarmila Mullerova

    2006-01-01

    Full Text Available IR measurements were carried out on both amorphous and polycrystalline silicon samples deposited by PECVDon glass substrate. The transition from amorphous to polycrystalline phase was achieved by increasing dilution of silaneplasma at the deposition process. The samples were found to be mixed phase materials. Commonly, infrared spectra ofhydrogenated silicon thin films yield information about microstructure, hydrogen content and hydrogen bonding to silicon. Inthis paper, additional understanding was retrieved from infrared response. Applying standard optical laws, effective mediatheory and Clausius-Mossoti approach concerning the Si-Si and Si-H bonds under IR irradiation as individual oscillators,refractive indices in the long wavelength limit, crystalline, amorphous and voids volume fractions and the mass density of thefilms were determined. The mass density was found to decrease with increasing crystalline volume fraction, which can beattributed to the void-dominated mechanism of network formation.

  18. Radial junction amorphous silicon solar cells on PECVD-grown silicon nanowires.

    Science.gov (United States)

    Yu, Linwei; O'Donnell, Benedict; Foldyna, Martin; Roca i Cabarrocas, Pere

    2012-05-17

    Constructing radial junction hydrogenated amorphous silicon (a-Si:H) solar cells on top of silicon nanowires (SiNWs) represents a promising approach towards high performance and cost-effective thin film photovoltaics. We here develop an all-in situ strategy to grow SiNWs, via a vapour-liquid-solid (VLS) mechanism on top of ZnO-coated glass substrate, in a plasma-enhanced chemical vapour deposition (PECVD) reactor. Controlling the distribution of indium catalyst drops allows us to tailor the as-grown SiNW arrays into suitable size and density, which in turn results in both a sufficient light trapping effect and a suitable arrangement allowing for conformal coverage of SiNWs by subsequent a-Si:H layers. We then demonstrate the fabrication of radial junction solar cells and carry on a parametric study designed to shed light on the absorption and quantum efficiency response, as functions of the intrinsic a-Si:H layer thickness and the density of SiNWs. These results lay a solid foundation for future structural optimization and performance ramp-up of the radial junction thin film a-Si:H photovoltaics.

  19. Photoemission studies of amorphous silicon induced by P + ion implantation

    Science.gov (United States)

    Petö, G.; Kanski, J.

    1995-12-01

    An amorphous Si layer was formed on a Si (1 0 0) surface by P + implantation at 80 keV. This layer was investigated by means of photoelectron spectroscopy. The resulting spectra are different from earlier spectra on amorphous Si prepared by e-gun evaporation or cathode sputtering. The differences consist of a decreased intensity in the spectral region corresponding to p-states, and appearace of new states at higher binding energy. Qualitativity similar results have been reported for Sb implanted amorphous Ge and the modification seems to be due to the changed short range order.

  20. Structural changes induced by heavy ion irradiation in titanium silicon carbide

    Science.gov (United States)

    Nappé, J. C.; Monnet, I.; Grosseau, Ph.; Audubert, F.; Guilhot, B.; Beauvy, M.; Benabdesselam, M.; Thomé, L.

    2011-02-01

    Carbide-type ceramics, which have remarkable thermomechanical properties, are sensed to manufacture the fuel cladding of Generation IV reactors that should work at high temperature. The MAX phases, and more particularly titanium silicon carbide, are distinguished from other materials by their ability to have some plasticity, even at room temperature. For this study, polycrystalline Ti 3SiC 2 was irradiated with ions of different energies, which allow to discriminate the effect of both electronic and nuclear interactions. After characterization by low-incidence X-ray diffraction and cross-sectional transmission electron microscopy, it appears that Ti 3SiC 2 is not sensitive to electronic excitations while nuclear shocks damage its structure. The results show the creation of many defects and disorder in the structure, an expansion of the hexagonal close-packed lattice along the c axis, and an increase in the microstrain yield.

  1. N-type crystalline silicon films free of amorphous silicon deposited on glass by HCl addition using hot wire chemical vapour deposition.

    Science.gov (United States)

    Chung, Yung-Bin; Park, Hyung-Ki; Lee, Sang-Hoon; Song, Jean-Ho; Hwang, Nong-Moon

    2011-09-01

    Since n-type crystalline silicon films have the electric property much better than those of hydrogenated amorphous and microcrystalline silicon films, they can enhance the performance of advanced electronic devices such as solar cells and thin film transistors (TFTs). Since the formation of amorphous silicon is unavoidable in the low temperature deposition of microcrystalline silicon on a glass substrate at temperatures less than 550 degrees C in the plasma-enhanced chemical vapour deposition and hot wire chemical vapour deposition (HWCVD), crystalline silicon films have not been deposited directly on a glass substrate but fabricated by the post treatment of amorphous silicon films. In this work, by adding the HCl gas, amorphous silicon-free n-type crystalline silicon films could be deposited directly on a glass substrate by HWCVD. The resistivity of the n-type crystalline silicon film for the flow rate ratio of [HCl]/[SiH4] = 7.5 and [PH3]/[SiH4] = 0.042 was 5.31 x 10(-4) ohms cm, which is comparable to the resistivity 1.23 x 10(-3) ohms cm of films prepared by thermal annealing of amorphous silicon films. The absence of amorphous silicon in the film could be confirmed by high resolution transmission electron microscopy.

  2. In situ observation of shear-driven amorphization in silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    He, Yang; Zhong, Li; Fan, Feifei; Wang, Chongmin; Zhu, Ting; Mao, Scott X.

    2016-09-19

    Amorphous materials have attracted great interest in the scientific and technological fields. An amorphous solid usually forms under the externally driven conditions of melt-quenching, irradiation and severe mechanical deformation. However, its dynamic formation process remains elusive. Here we report the in situ atomic-scale observation of dynamic amorphization processes during mechanical straining of nanoscale silicon crystals by high resolution transmission electron microscopy (HRTEM). We observe the shear-driven amorphization (SDA) occurring in a dominant shear band. The SDA involves a sequence of processes starting with the shear-induced diamond-cubic to diamond-hexagonal phase transition that is followed by dislocation nucleation and accumulation in the newly formed phase, leading to the formation of amorphous silicon. The SDA formation through diamond-hexagonal phase is rationalized by its structural conformity with the order in the paracrystalline amorphous silicon, which maybe widely applied to diamond-cubic materials. Besides, the activation of SDA is orientation-dependent through the competition between full dislocation nucleation and partial gliding.

  3. Amorphization of silicon induced by nanodroplet impact: A molecular dynamics study

    Science.gov (United States)

    Saiz, Fernan; Gamero-Castaño, Manuel

    2012-09-01

    The hypervelocity impact of electrosprayed nanodroplets on crystalline silicon produces an amorphous layer with a thickness comparable to the droplet diameters. The phase transition is puzzling considering that amorphization has not been observed in macroscopic shock compression of silicon, the only apparent difference being the several orders of magnitude disparity between the sizes of the macroscopic and nanodroplet projectiles. This article investigates the physics of the amorphization by modeling the impact of a nanodrop on single-crystal silicon via molecular dynamics. The simulation shows that the amorphization results from the heating and subsequent melting of a thin layer of silicon surrounding the impact area, followed by an ultrafast quenching with cooling rates surpassing 1013 K/s. These conditions impede crystalline growth in the supercooled liquid phase, which finally undergoes a glass transition to render a disordered solid phase. The high temperature field near the impact interface is a localized effect. The significantly different temperatures and cooling rates near the surface and in the bulk explain why amorphization occurs in nanodroplet impact, while it is absent in macroscopic shock compression. Since these high temperatures and ultrafast quenching rates are likely to occur in other materials, nanodroplet impact may become a general amorphatization technique for treating the surfaces of most crystalline substrates.

  4. Band structure of germanium carbides for direct bandgap silicon photonics

    Science.gov (United States)

    Stephenson, C. A.; O'Brien, W. A.; Penninger, M. W.; Schneider, W. F.; Gillett-Kunnath, M.; Zajicek, J.; Yu, K. M.; Kudrawiec, R.; Stillwell, R. A.; Wistey, M. A.

    2016-08-01

    Compact optical interconnects require efficient lasers and modulators compatible with silicon. Ab initio modeling of Ge1-xCx (x = 0.78%) using density functional theory with HSE06 hybrid functionals predicts a splitting of the conduction band at Γ and a strongly direct bandgap, consistent with band anticrossing. Photoreflectance of Ge0.998C0.002 shows a bandgap reduction supporting these results. Growth of Ge0.998C0.002 using tetrakis(germyl)methane as the C source shows no signs of C-C bonds, C clusters, or extended defects, suggesting highly substitutional incorporation of C. Optical gain and modulation are predicted to rival III-V materials due to a larger electron population in the direct valley, reduced intervalley scattering, suppressed Auger recombination, and increased overlap integral for a stronger fundamental optical transition.

  5. Light Entrapping, Modeling & Effect of Passivation on Amorphous Silicon Based PV Cell

    OpenAIRE

    Md Mostafizur Rahman; Md. Moidul Islam; Mission Kumar Debnath; Saifullah, S.M.; Samera Hossein; Nusrat Jahan Bristy

    2016-01-01

    This research paper present efforts to enhance the performance of amorphous silicon p-i-n type solar cell using sidewall passivation. For sidewall passivation, MEMS insulation material Al2O3 was used. The main objective of this paper is to observe the effect of sidewall passivation in amorphous silicon solar cell and increase the conversion efficiency of the solar cell. Passivation of Al2O3 is found effective to subdue reverse leakage. It increases the electric potential generated in the desi...

  6. Origin of the ESR signal with g=2.0055 in amorphous silicon

    OpenAIRE

    1990-01-01

    Defect-state wave functions for threefold- and fivefold-coordinated Si atoms in amorphous silicon clusters have been calculated with use of a first-principles linear combination of the atomic orbitals method in order to clarify the origin of the ESR signal with g=2.0055 in amorphous silicon. The wave function of the defect state originating from the threefold-coordinated Si atom is strongly localized on this atom. On the other hand, that for the fivefold-coordinated Si atom is extended on thi...

  7. Decoding the message from meteoritic stardust silicon carbide grains

    Energy Technology Data Exchange (ETDEWEB)

    Lewis, Karen M. [Monash Centre for Astrophysics (MoCA), Monash University, Clayton VIC 3800, Australia and Earth-Life Science Institute (ELSI), Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo, 152-8550 (Japan); Lugaro, Maria [Monash Centre for Astrophysics (MoCA), Monash University, Clayton VIC 3800 (Australia); Gibson, Brad K.; Pilkington, Kate [Monash Centre for Astrophysics (MoCA), Monash University, Clayton VIC 3800, Australia and Jeremiah Horrocks Institute, University of Central Lancashire (United Kingdom)

    2014-05-02

    SiC mainstream grains are presolar grains believed to form in the envelopes of carbon rich asymptotic giant branch (AGB) stars with masses between 1.5 and 3 solar masses. These grains represent a conundrum as the {sup 29}Si and {sup 30}Si abundances indicate that they formed in stars of super-solar metallicity, before the solar system formed. To shed light on this problem, we use silicon isotopic abundances to derive an age-metallicity relation for the stars believed to have produced the SiC mainstream grains. For 2732 mainstream SiC grains listed in the Presolar Grain Database, we use the {sup 29}Si abundances with the latest galactic chemical evolution (GCE) models to derive [Fe/H], and {sup 30}Si abundances along with the models of Zinner et al. (2006) to determine an approximate birth age for the parent AGB star. Comparing our age-metallicity relation with observational relationships derived for nearby stars, we find that the spread of [Fe/H] is in agreement, but the mean [Fe/H] in our relation is higher by 0.2 dex. We propose that this difference is because stars with higher [Fe/H] produce more dust and thus are over-represented in our age metallicity diagram, a finding consistent with previous published works. This result offers a solution for the long-standing problem of silicon in Stardust SiC grains, confirms the necessity of coupling chemistry and dynamics in simulations of the chemical evolution of our Galaxy, and constrains the modelling of dust condensation in stellar winds as a function of the metallicity.

  8. Elastic behavior of amorphous-crystalline silicon nanocomposite: An atomistic view

    Science.gov (United States)

    Das, Suvankar; Dutta, Amlan

    2017-01-01

    In the context of mechanical properties, nanocomposites with homogeneous chemical composition throughout the matrix and the dispersed phase are of particular interest. In this study, the elastic moduli of amorphous-crystalline silicon nanocomposite have been estimated using atomistic simulations. A comparison with the theoretical model reveals that the elastic behavior is significantly influenced by the crystal-amorphous interphase. On observing the effect of volume-fraction of the crystalline phase, an anomalous trend for the bulk modulus is obtained. This phenomenon is attributed to the relaxation displacements of the amorphous atoms.

  9. Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism

    Science.gov (United States)

    Sahoo, A. K.; Subramani, N. K.; Nallatamby, J. C.; Sylvain, L.; Loyez, C.; Quere, R.; Medjdoub, F.

    2016-01-01

    In this paper, we present a comparative study on small-signal modeling of AlN/GaN/AlGaN double hetero-structure high electron mobility transistors (HEMTs) grown on silicon (Si) and silicon carbide (SiC) substrate. The traditional small signal equivalent circuit model is modified to take into account the transmission loss mechanism of coplanar waveguide (CPW) line which cannot be neglected at high frequencies. CPWs and HEMTs-on-AlN/GaN/AlGaN epitaxial layers are fabricated on both the Si and SiC substrates. S-parameter measurements at room temperature are performed over the frequency range from 0.5 GHz to 40 GHz. Transmission loss of CPW lines are modeled with a distributed transmission line (TL) network and an equivalent circuit model is included in the small-signal transistor model topology. Measurements and simulations are compared and found to be in good agreement.

  10. Single-crystal cubic silicon carbide: an in vivo biocompatible semiconductor for brain machine interface devices.

    Science.gov (United States)

    Frewin, Christopher L; Locke, Christopher; Saddow, Stephen E; Weeber, Edwin J

    2011-01-01

    Single crystal silicon carbide (SiC) is a wide band-gap semiconductor which has shown both bio- and hemo-compatibility [1-5]. Although single crystalline SiC has appealing bio-sensing potential, the material has not been extensively characterized. Cubic silicon carbide (3C-SiC) has superior in vitro biocompatibility compared to its hexagonal counterparts [3, 5]. Brain machine interface (BMI) systems using implantable neuronal prosthetics offer the possibility of bi-directional signaling, which allow sensory feedback and closed loop control. Existing implantable neural interfaces have limited long-term reliability, and 3C-SiC may be a material that may improve that reliability. In the present study, we investigated in vivo 3C-SiC biocompatibility in the CNS of C56BL/6 mice. 3C-SiC was compared against the known immunoreactive response of silicon (Si) at 5, 10, and 35 days. The material was examined to detect CD45, a protein tyrosine phosphatase (PTP) expressed by activated microglia and macrophages. The 3C-SiC surface revealed limited immunoresponse and significantly reduced microglia compared to Si substrate.

  11. Anode properties of silicon-rich amorphous silicon suboxide films in all-solid-state lithium batteries

    Science.gov (United States)

    Miyazaki, Reona; Ohta, Narumi; Ohnishi, Tsuyoshi; Takada, Kazunori

    2016-10-01

    This paper reports the effects of introducing oxygen into amorphous silicon films on their anode properties in all-solid-state lithium batteries. Although poor cycling performance is a critical issue in silicon anodes, it has been effectively improved by introducing even a small amount of oxygen, that is, even in Si-rich amorphous silicon suboxide (a-SiOx) films. Because of the small amount of oxygen in the films, high cycling performance has been achieved without lowering the capacity and power density: an a-Si film delivers discharge capacity of 2500 mAh g-1 under high discharge current density of 10 mA cm-2 (35 C). These results demonstrate that a-SiOx is a promising candidate for high-capacity anode materials in solid-state batteries.

  12. Fabrication and characterization of silicon based thermal neutron detector with hot wire chemical vapor deposited boron carbide converter

    Energy Technology Data Exchange (ETDEWEB)

    Chaudhari, Pradip, E-mail: pradipcha@gmail.com [Semiconductor Thin Films and Plasma Processing Laboratory, Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai – 400076 (India); Singh, Arvind, E-mail: arvindsingh1884@gmail.com [Electronics Division, Bhabha Atomic Research Centre, Trombay, Mumbai – 400085 (India); Topkar, Anita, E-mail: anita.topkar@gmail.com [Electronics Division, Bhabha Atomic Research Centre, Trombay, Mumbai – 400085 (India); Dusane, Rajiv, E-mail: rodusane@iitb.ac.in [Semiconductor Thin Films and Plasma Processing Laboratory, Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai – 400076 (India)

    2015-04-11

    In order to utilize the well established silicon detector technology for neutron detection application, a silicon based thermal neutron detector was fabricated by integrating a thin boron carbide layer as a neutron converter with a silicon PIN detector. Hot wire chemical vapor deposition (HWCVD), which is a low cost, low temperature process for deposition of thin films with precise thickness was explored as a technique for direct deposition of a boron carbide layer over the metalized front surface of the detector chip. The presence of B-C bonding and {sup 10}B isotope in the boron carbide film were confirmed by Fourier transform infrared spectroscopy and secondary ion mass spectrometry respectively. The deposition of HWCVD boron carbide layer being a low temperature process was observed not to cause degradation of the PIN detector. The response of the detector with 0.2 µm and 0.5 µm thick boron carbide layer was examined in a nuclear reactor. The pulse height spectrum shows evidence of thermal neutron response with signature of (n, α) reaction. The results presented in this article indicate that HWCVD boron carbide deposition technique would be suitable for low cost industrial fabrication of PIN based single element or 1D/2D position sensitive thermal neutron detectors.

  13. Fabrication and characterization of silicon based thermal neutron detector with hot wire chemical vapor deposited boron carbide converter

    Science.gov (United States)

    Chaudhari, Pradip; Singh, Arvind; Topkar, Anita; Dusane, Rajiv

    2015-04-01

    In order to utilize the well established silicon detector technology for neutron detection application, a silicon based thermal neutron detector was fabricated by integrating a thin boron carbide layer as a neutron converter with a silicon PIN detector. Hot wire chemical vapor deposition (HWCVD), which is a low cost, low temperature process for deposition of thin films with precise thickness was explored as a technique for direct deposition of a boron carbide layer over the metalized front surface of the detector chip. The presence of B-C bonding and 10B isotope in the boron carbide film were confirmed by Fourier transform infrared spectroscopy and secondary ion mass spectrometry respectively. The deposition of HWCVD boron carbide layer being a low temperature process was observed not to cause degradation of the PIN detector. The response of the detector with 0.2 μm and 0.5 μm thick boron carbide layer was examined in a nuclear reactor. The pulse height spectrum shows evidence of thermal neutron response with signature of (n, α) reaction. The results presented in this article indicate that HWCVD boron carbide deposition technique would be suitable for low cost industrial fabrication of PIN based single element or 1D/2D position sensitive thermal neutron detectors.

  14. Modeling of defect formation in silicon carbide during PVT growth

    Science.gov (United States)

    Drachev, Roman Victorovich

    2002-01-01

    The improvement of PVT grown SiC structural quality is crucial for the wide commercialization of SiC devices that feature superior characteristics for power conditioning and control. This is why, this dissertation is devoted to investigation and development of comprehensive models that can help to explain, understand and, then, suppress (eliminate) formation of various defects in SiC during PVT growth. The dissertation consists of six chapters. The first chapter is introductory. The second chapter considers in detail the general principles and physical bases of the SiC PVT growth technique along with the temperature dependence of pressure, composition and stoichiometry of the SiC gaseous phase. Questions related to the diffusive mass transport in the SiC growth cell are also discussed. The growth velocity as a function of the mass transport rate, the heat balance at the surface of crystallization and the growth front-crystal backside temperature difference is analyzed. Also the graphitization processes and instability of the sublimation temperature in the source material region are addressed. Chapter number three concerns generation of silicon and carbon second phase precipitates at the front of SiC crystallization. The comprehensive models concerning these phenomena are developed. The fourth chapter considers defect formation in SiC caused by the presence of carbon and/or silicon second phase particles at the growth front. Generation mechanisms of such structural defects as heterogeneous inclusions, point and planar defects, and filamentary voids are discussed in detail. Chapter number five deals with the defects caused by thermal stresses in the growing boule of SiC. Analytical estimations of the axially symmetric temperature field distribution and shear stress radial distribution in plane strain approximation are employed in order to estimate the extent to which such phenomena cause the generation of dislocations and micropipe formation in the growing ingot. The

  15. Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide

    Science.gov (United States)

    Evans, Laura J.; Okojie, Robert S.; Lukco, Dorothy

    2011-01-01

    We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction

  16. A novel strategy for retrospective exposure assessment in the Norwegian silicon carbide industry.

    Science.gov (United States)

    Føreland, Solveig; Bugge, Merete Drevvatne; Bakke, Berit; Bye, Erik; Eduard, Wijnand

    2012-01-01

    The objective was to construct a retrospective job-exposure matrix (JEM) for the Norwegian silicon carbide industry. More than 3300 historical total dust measurements were available (1967-2005); however, there were few measurements of other agents. Total dust measurements were therefore used as the basis for the JEM, and a novel method was developed to estimate exposure to other agents. Multiple linear regression models were developed to describe historical exposure to total dust. Exposure estimates were extrapolated backward to periods without exposure data by adjustments for process and work-hour related changes. An exposure assessment study was performed where total dust was sampled in parallel with fibers or respirable dust. The respirable dust was analyzed for the content of quartz, cristobalite, and silicon carbide. Mixed-effect models were developed to estimate the exposure to these agents from total dust exposure, plant, and job group. Exposure to asbestos and polycyclic aromatic hydrocarbons was assigned qualitatively. Multiple linear regression models of total dust described historical exposure best in the furnace department (R(2) (adj) = 0.49-0.74). Models in the other departments explained less variance (R(2) (adj) = 0.12-0.32). Exposure determinants and total dust explained a substantial proportion of the between- (70-100%) and within-worker (8.0-54%) variance in the mixed-effect models. The relative bias between available historical measurements and the estimated exposure to dust components varied between -39% (fiber) and 40% (quartz). However, corrections were not considered necessary due to limitations in the historical data. The component-specific metrices were sufficiently different from each other (r(Pearson) silicon carbide and respirable dust from total dust exposure.].

  17. Proton irradiation effects of amorphous silicon solar cell for solar power satellite

    Energy Technology Data Exchange (ETDEWEB)

    Morita, Yousuke; Oshima, Takeshi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Sasaki, Susumu; Kuroda, Hideo; Ushirokawa, Akio

    1997-03-01

    Flexible amorphous silicon(fa-Si) solar cell module, a thin film type, is regarded as a realistic power generator for solar power satellite. The radiation resistance of fa-Si cells was investigated by the irradiations of 3,4 and 10 MeV protons. The hydrogen gas treatment of the irradiated fa-Si cells was also studied. The fa-Si cell shows high radiation resistance for proton irradiations, compared with a crystalline silicon solar cell. (author)

  18. The Effect of Excess Carbon on the Crystallographic, Microstructural, and Mechanical Properties of CVD Silicon Carbide Fibers

    Energy Technology Data Exchange (ETDEWEB)

    Marzik, J V; Croft, W J; Staples, R J; MoberlyChan, W J

    2006-12-05

    Silicon carbide (SiC) fibers made by chemical vapor deposition (CVD) are of interest for organic, ceramic, and metal matrix composite materials due their high strength, high elastic modulus, and retention of mechanical properties at elevated processing and operating temperatures. The properties of SCS-6{trademark} silicon carbide fibers, which are made by a commercial process and consist largely of stoichiometric SiC, were compared with an experimental carbon-rich CVD SiC fiber, to which excess carbon was added during the CVD process. The concentration, homogeneity, and distribution of carbon were measured using energy dispersive x-ray spectroscopy (SEM/EDS). The effect of excess carbon on the tensile strength, elastic modulus, and the crystallographic and microstructural properties of CVD silicon carbide fibers was investigated using tensile testing, x-ray diffraction, scanning electron microscopy (SEM), and transmission electron microscopy (TEM).

  19. Carbothermal synthesis of coatings on silicon carbide fibers

    Science.gov (United States)

    Chen, Linlin

    Four kinds of protective coatings---carbide derived carbon (CDC), boron nitride (BN), Al-O-N and BN doped Al-O-N (BAN) have been successfully synthesized on the surface of SiC fibers on the target to enhance the mechanical properties and oxidation resistance of the coated SiC fibers for the application as the reinforcements in the Ceramic Matrix Composites (CMCs) in the high temperatures. First of all, CDC coatings have been uniformly produced on Tyranno ZMI SiC fibers with good thickness control within nanometer accuracy by the chlorination in the temperature range of 550--700°C at atmospheric pressure. Kinetics of the carbon coating growth on the fibers has been systematically studied and thus a good foundation was set up for the further coating synthesis. BN coatings have been synthesized on the surface of SiC powders, fibers and fabrics by a novel carbothermal nitridation method. Non-bridging has been achieved in the BN-coated fiber tows by the nitridation in ammonia at atmospheric pressure in a temperature below 1200°C, which is lower compared to the traditional BN synthesis method and does not cause the degradation of the coated-fibers. BN coatings on the carbon nanotubes have also been formed and unlike the common methods, no additional dopant (such as metal catalyst) is introduced into the system during the BN coatings syntheses, thus the contamination of the final product is avoided. A novel Al-O-N coating has been explored with the most impressive point is that a more than 65% improvement in the tensile strength (up to ˜5.1GPa) and a three-time increase in the Weibull modulus compared to the as-received fibers are resulted by the formation of 200nm Al-O-N coating on the SiC fibers. It exceeds the strength of all other small diameter SiC fibers reported in the literature. Furthermore, BAN coating has also been produced on the surface of SiC fibers and about 20% enhancement in mechanical strength is achieved compared to that of the original fibers

  20. Growth and tribological properties of diamond films on silicon and tungsten carbide substrates

    Science.gov (United States)

    Radhika, R.; Ramachandra Rao, M. S.

    2016-11-01

    Hot filament chemical vapor deposition technique was used to deposit microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films on silicon (Si) and tungsten carbide (WC-6Co) substrates. Friction coefficient of larger diamond grains deposited on WC-6Co substrate shows less value approximately 0.2 while this differs marginally on films grown on Si substrate. The study claims that for a less friction coefficient, the grain size is not necessarily smaller. However, the less friction coefficient (less than 0.1 saturated value) in MCD and NCD deposited on Si is explained by the formation of graphitized tribolayer. This layer easily forms when diamond phase is thermodynamically unstable.