Fabrication and characterization of contact layers in amorphous silicon solar cells

International Nuclear Information System (INIS)

Kolter, M.

1993-04-01

The production and characterisation of amorphous and microcrystalline n-doped layers (a-Si:H(n) and c-Si:H(n)) for thin film solar cells is described together contact investigations. The layers were produced in a plasma CVD. The electric conductivity was measured

Ion implantation and amorphous metals

International Nuclear Information System (INIS)

Hohmuth, K.; Rauschenbach, B.

1981-01-01

This review deals with ion implantation of metals in the high concentration range for preparing amorphous layers (>= 10 at%, implantation doses > 10 16 ions/cm 2 ). Different models are described concerning formation of amorphous phases of metals by ion implantation and experimental results are given. The study of amorphous phases has been carried out by the aid of Rutherford backscattering combined with the channeling technique and using transmission electron microscopy. The structure of amorphous metals prepared by ion implantation has been discussed. It was concluded that amorphous metal-metalloid compounds can be described by a dense-random-packing structure with a great portion of metal atoms. Ion implantation has been compared with other techniques for preparing amorphous metals and the adventages have been outlined

Molecular simulation of freestanding amorphous nickel thin films

Energy Technology Data Exchange (ETDEWEB)

Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

2013-10-31

Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

Effect of γ-(Fe,Ni) crystal-size stabilization in Fe-Ni-B amorphous ribbon

Science.gov (United States)

Gorshenkov, M. V.; Glezer, A. M.; Korchuganova, O. A.; Aleev, A. A.; Shurygina, N. A.

2017-02-01

The effect of stabilizing crystal size in a melt-quenched amorphous Fe50Ni33B17 ribbon is described upon crystallization in a temperature range of 360-400°C. The shape, size, volume fraction, and volume density have been investigated by transmission electron microscopy and X-ray diffraction methods. The formation of an amorphous layer of the Fe50Ni29B21 compound was found by means of atomic-probe tomography at the boundary of the crystallite-amorphous phase. The stabilization of crystal sizes during annealing is due to the formation of a barrier amorphous layer that has a crystallization temperature that exceeds the crystallization temperature of the matrix amorphous alloy.

Limiting of photo induced changes in amorphous chalcogenide/alumino-silicate nanomultilayers

International Nuclear Information System (INIS)

Charnovych, S.; Nemec, P.; Nazabal, V.; Csik, A.; Allix, M.; Matzen, G.; Kokenyesi, S.

2011-01-01

Highlights: → Amorphous chalcogenides were investigated in this work. → Photo-induced effects were investigated in the created thin films. → Limiting of photo induced changes in amorphous chalcogenide/alumino-silicate nanomultilayers have been studied. - Abstract: Photo induced changes in amorphous As 20 Se 80 /alumino-silicate nanomultilayers (NML) produced by pulsed laser deposition (PLD) method have been studied in this work. The aim was to investigate the photo induced optical and surface relief changes due to the band gap illumination under the size- and hard cover limited conditions. It was observed that the hard cover layer on the surface of the uniform film or alumino-silicate sub-layers in the NML structure influences the photo darkening and restricts surface relief formations in As 20 Se 80 film or in the related NML compared with this effect in a pure chalcogenide layer. The influence of hard layers is supposed to be connected with limiting the free volume formation at the initial stage of the transformation process, which in turn limits the atomic movement and so the surface relief formation.

Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+

International Nuclear Information System (INIS)

Tsai, M.Y.; Streetman, B.G.

1979-01-01

Electrical properties of recrystallized amorphous silicon layers, formed by BF + 2 implants or Si + +B + implants, have been studied by differential resistivity and Hall-effect measurements. Electrical carrier distribution profiles show that boron atoms inside the amorphized Si layers can be fully activated during recrystallization at 550 0 C. The mobility is also recovered. However, the tail of the B distribution, located inside a damaged region near the original amorphous-crystalline interface, remains inactive. This inactive tail has been observed for all samples implanted with BF + 2 . Only in a thicker amorphous layer, formed for example by Si + predamage implants, can the entire B profile be activated. The etch rate of amorphous silicon in HF and the effect of fluorine on the recrystallization rate are also reported

The chemical composition and band gap of amorphous Si:C:N:H layers

Energy Technology Data Exchange (ETDEWEB)

Swatowska, Barbara, E-mail: swatow@agh.edu.pl [AGH University of Science and Technology, Department of Electronics, Mickiewicza Av. 30, 30-059 Krakow (Poland); Kluska, Stanislawa; Jurzecka-Szymacha, Maria [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Mickiewicza Av. 30, 30-059 Krakow (Poland); Stapinski, Tomasz [AGH University of Science and Technology, Department of Electronics, Mickiewicza Av. 30, 30-059 Krakow (Poland); Tkacz-Smiech, Katarzyna [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Mickiewicza Av. 30, 30-059 Krakow (Poland)

2016-05-15

Highlights: • Six type of amorphous hydrogenated films were obtained and analysed. • Investigated chemical bondings strongly influenced energy gap values. • Analysed layers could be applied as semiconductors and also as dielectrics. - Abstract: In this work we presented the correlation between the chemical composition of amorphous Si:C:N:H layers of various content of silicon, carbon and nitrogen, and their band gap. The series of amorphous Si:C:N:H layers were obtained by plasma assisted chemical vapour deposition method in which plasma was generated by RF (13.56 MHz, 300 W) and MW (2.45 GHz, 2 kW) onto monocrystalline silicon Si(001) and borosilicate glass. Structural studies were based on FTIR transmission spectrum registered within wavenumbers 400–4000 cm{sup −1}. The presence of Si−C, Si−N, C−N, C=N, C=C, C≡N, Si−H and C−H bonds was shown. The values band gap of the layers have been determined from spectrophotometric and ellipsometric measurements. The respective values are contained in the range between 1.64 eV – characteristic for typical semiconductor and 4.21 eV – for good dielectric, depending on the chemical composition and atomic structure of the layers.

PETROLOGIC CONSTRAINTS ON AMORPHOUS AND CRYSTALLINE MAGNESIUM SILICATES: DUST FORMATION AND EVOLUTION IN SELECTED HERBIG Ae/Be SYSTEMS

International Nuclear Information System (INIS)

Rietmeijer, Frans J. M.; Nuth, Joseph A.

2013-01-01

The Infrared Space Observatory, Spitzer Space Telescope, and Herschel Space Observatory surveys provided a wealth of data on the Mg-silicate minerals (forsterite, enstatite), silica, and ''amorphous silicates with olivine and pyroxene stoichiometry'' around Herbig Ae/Be stars. These incredible findings do not resonate with the mainstream Earth Sciences because of (1) disconnecting ''astronomical nomenclature'' and the long existing mineralogical and petrologic terminology of minerals and amorphous materials, and (2) the fact that Earth scientists (formerly geologists) are bound by the ''Principle of Actualism'' that was put forward by James Hutton (1726-1797). This principle takes a process-oriented approach to understanding mineral and rock formation and evolution. This paper will (1) review and summarize the results of laboratory-based vapor phase condensation and thermal annealing experiments, (2) present the pathways of magnesiosilica condensates to Mg-silicate mineral (forsterite, enstatite) formation and processing, and (3) present mineralogical and petrologic implications of the properties and compositions of the infrared-observed crystalline and amorphous dust for the state of circumstellar disk evolution. That is, the IR-observation of smectite layer silicates in HD142527 suggests the break-up of asteroid-like parent bodies that had experienced aqueous alteration. We discuss the persistence of amorphous dust around some young stars and an ultrafast amorphous to crystalline dust transition in HD 163296 that leads to forsterite grains with numerous silica inclusions. These dust evolution processes to form forsterite, enstatite ± tridymite could occur due to amorphous magnesiosilica dust precursors with a serpentine- or smectite-dehydroxylate composition.

PETROLOGIC CONSTRAINTS ON AMORPHOUS AND CRYSTALLINE MAGNESIUM SILICATES: DUST FORMATION AND EVOLUTION IN SELECTED HERBIG Ae/Be SYSTEMS

Energy Technology Data Exchange (ETDEWEB)

Rietmeijer, Frans J. M. [Department of Earth and Planetary Sciences, MSC 03 2040, 1-University of New Mexico, Albuquerque, NM 87131-001 (United States); Nuth, Joseph A., E-mail: fransjmr@unm.edu [Astrochemistry Laboratory, Solar System Exploration Division, Code 691, NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States)

2013-07-01

The Infrared Space Observatory, Spitzer Space Telescope, and Herschel Space Observatory surveys provided a wealth of data on the Mg-silicate minerals (forsterite, enstatite), silica, and ''amorphous silicates with olivine and pyroxene stoichiometry'' around Herbig Ae/Be stars. These incredible findings do not resonate with the mainstream Earth Sciences because of (1) disconnecting ''astronomical nomenclature'' and the long existing mineralogical and petrologic terminology of minerals and amorphous materials, and (2) the fact that Earth scientists (formerly geologists) are bound by the ''Principle of Actualism'' that was put forward by James Hutton (1726-1797). This principle takes a process-oriented approach to understanding mineral and rock formation and evolution. This paper will (1) review and summarize the results of laboratory-based vapor phase condensation and thermal annealing experiments, (2) present the pathways of magnesiosilica condensates to Mg-silicate mineral (forsterite, enstatite) formation and processing, and (3) present mineralogical and petrologic implications of the properties and compositions of the infrared-observed crystalline and amorphous dust for the state of circumstellar disk evolution. That is, the IR-observation of smectite layer silicates in HD142527 suggests the break-up of asteroid-like parent bodies that had experienced aqueous alteration. We discuss the persistence of amorphous dust around some young stars and an ultrafast amorphous to crystalline dust transition in HD 163296 that leads to forsterite grains with numerous silica inclusions. These dust evolution processes to form forsterite, enstatite {+-} tridymite could occur due to amorphous magnesiosilica dust precursors with a serpentine- or smectite-dehydroxylate composition.

Magnetic properties of amorphous Tb-Fe thin films with an artificially layered structure

International Nuclear Information System (INIS)

Sato, N.

1986-01-01

An alternating terbium-iron (Tb-Fe) multilayer structure artificially made in amorphous Tb-Fe thin films gives rise to excellent magnetic properties of large perpendicular uniaxial anisotropy, large saturation magnetization, and large coercivity over a wide range of Tb composition in the films. The films are superior to amorphous Tb-Fe alloy thin films, especially when they are piled up with a monatomic layer of Tb and several atomic layers of Fe in an alternating fashion. Small-angle x-ray diffraction analysis confirmed the layering of monatomic layers of Tb and Fe, where the periodicity of the layers was found to be about 5.9 A. Direct evidence for an artificially layered structure was obtained by transmission electron microscopic and Auger electron spectroscopic observations. Together with magnetic measurements of hysteresis loops and torque curves, it has been concluded that the most important origin of the large magnetic uniaxial anisotropy can be attributed to the Tb-Fe pairs aligned perpendicular to the films

The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation

International Nuclear Information System (INIS)

Aleksandrov, O. V.

2006-01-01

A model of segregation-induced redistribution of impurities of rare-earth elements during solid-phase epitaxial crystallization of silicon layers amorphized by ion implantation is developed. This model is based on the assumption that a transition layer with a high mobility of atoms is formed at the interphase boundary on the side of a-Si; the thickness of this layer is governed by the diffusion length of vacancies in a-Si. The Er concentration profiles in Si implanted with both erbium and oxygen ions are analyzed in the context of the model. It shown that, in the case of high doses of implantation of rare-earth ions, it is necessary to take into account the formation of R m clusters (m = 4), where R denotes the atom of a rare-earth element, whereas, if oxygen ions are also implanted, formation of the complexes RO n (n = 3-6) should be taken into account; these complexes affect the transition-layer thickness and segregation coefficient

Protective layer formation on magnesium in cell culture medium.

Science.gov (United States)

Wagener, V; Virtanen, S

2016-06-01

In the past, different studies showed that hydroxyapatite (HA) or similar calcium phosphates can be precipitated on Mg during immersion in simulated body fluids. However, at the same time, in most cases a dark grey or black layer is built under the white HA crystals. This layer seems to consist as well of calcium phosphates. Until now, neither the morphology nor its influence on Mg corrosion have been investigated in detail. In this work commercially pure magnesium (cp) was immersed in cell culture medium for one, three and five days at room temperature and in the incubator (37 °C, 5% CO2). In addition, the influence of proteins on the formation of a corrosion layer was investigated by adding 20% of fetal calf serum (FCS) to the cell culture medium in the incubator. In order to analyze the formed layers, SEM images of cross sections, X-ray Photoelectron Spectroscopy (XPS), X-ray diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDX) and Fourier Transformed Infrared Spectroscopy (FTIR) measurements were carried out. Characterization of the corrosion behavior was achieved by electrochemical impedance spectroscopy (EIS) and by potentio-dynamic polarization in Dulbecco's Modified Eagle's Medium (DMEM) at 37°C. Surface analysis showed that all formed layers consist mainly of amorphous calcium phosphate compounds. For the immersion at room temperature the Ca/P ratio indicates the formation of HA, while in the incubator probably pre-stages to HA are formed. The different immersion conditions lead to a variation in layer thicknesses. However, electrochemical characterization shows that the layer thickness does not influence the corrosion resistance of magnesium. The main influencing factor for the corrosion behavior is the layer morphology. Thus, immersion at room temperature leads to the highest corrosion protection due to the formation of a compact outer layer. Layers formed in the incubator show much worse performances due to completely porous structures. The

Amorphous-tetrahedral diamondlike carbon layered structures resulting from film growth energetics

Science.gov (United States)

Siegal, M. P.; Barbour, J. C.; Provencio, P. N.; Tallant, D. R.; Friedmann, T. A.

1998-08-01

High-resolution transmission electron microscopy (HRTEM) shows that amorphous-tetrahedral diamondlike carbon (a-tC) films grown by pulsed-laser deposition on Si(100) consist of three-to-four layers, depending on the growth energetics. We estimate the density of each layer using both HRTEM image contrast and Rutherford backscattering spectrometry. The first carbon layer and final surface layer have relatively low density. The bulk of the film between these two layers has higher density. For films grown under the most energetic conditions, there exists a superdense a-tC layer between the interface and bulk layers. The density of all four layers, and the thickness of the surface and interfacial layers, correlate well with the energetics of the depositing carbon species.

Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

International Nuclear Information System (INIS)

Kizu, Takio; Tsukagoshi, Kazuhito; Aikawa, Shinya; Nabatame, Toshihide; Fujiwara, Akihiko; Ito, Kazuhiro; Takahashi, Makoto

2016-01-01

We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm"2/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (V_O) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense V_O in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.

Amorphization of metals by ion implantation and ion beam mixing

International Nuclear Information System (INIS)

Rauschenbach, B.; Heera, V.

1988-01-01

Amorphous metallic systems can be formed either by high-fluence ion implantation of glassforming species or by irradiation of layered metal systems with inert gas ions. Both techniques and experimental examples are presented. Empirical rules are discussed which predict whether a given system can be transformed into an amorphous phase. Influence of temperature, implantation dose and pre-existing crystalline metal composition on amorphization is considered. Examples are given of the implantation induced amorphous structure, recrystallization and formation of quasicrystalline structures. (author)

Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer

Science.gov (United States)

Lin, Dong; Pi, Shubin; Yang, Jianwen; Tiwari, Nidhi; Ren, Jinhua; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping

2018-06-01

In this work, bottom-gate top-contact thin film transistors with double-stacked amorphous IWO/IWO:N channel layer were fabricated. Herein, amorphous IWO and N-doped IWO were deposited as front and back channel layers, respectively, by radio-frequency magnetron sputtering. The electrical characteristics of the bi-layer-channel thin film transistors (TFTs) were examined and compared with those of single-layer-channel (i.e., amorphous IWO or IWO:N) TFTs. It was demonstrated to exhibit a high mobility of 27.2 cm2 V‑1 s‑1 and an on/off current ratio of 107. Compared to the single peers, bi-layer a-IWO/IWO:N TFTs showed smaller hysteresis and higher stability under negative bias stress and negative bias temperature stress. The enhanced performance could be attributed to its unique double-stacked channel configuration, which successfully combined the merits of the TFTs with IWO and IWO:N channels. The underlying IWO thin film provided percolation paths for electron transport, meanwhile, the top IWO:N layer reduced the bulk trap densities. In addition, the IWO channel/gate insulator interface had reduced defects, and IWO:N back channel surface was insensitive to the ambient atmosphere. Overall, the proposed bi-layer a-IWO/IWO:N TFTs show potential for practical applications due to its possibly long-term serviceability.

Protective layer formation on magnesium in cell culture medium

Energy Technology Data Exchange (ETDEWEB)

Wagener, V.; Virtanen, S., E-mail: virtanen@ww.uni-erlangen.de

2016-06-01

In the past, different studies showed that hydroxyapatite (HA) or similar calcium phosphates can be precipitated on Mg during immersion in simulated body fluids. However, at the same time, in most cases a dark grey or black layer is built under the white HA crystals. This layer seems to consist as well of calcium phosphates. Until now, neither the morphology nor its influence on Mg corrosion have been investigated in detail. In this work commercially pure magnesium (cp) was immersed in cell culture medium for one, three and five days at room temperature and in the incubator (37 °C, 5% CO{sub 2}). In addition, the influence of proteins on the formation of a corrosion layer was investigated by adding 20% of fetal calf serum (FCS) to the cell culture medium in the incubator. In order to analyze the formed layers, SEM images of cross sections, X-ray Photoelectron Spectroscopy (XPS), X-ray diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDX) and Fourier Transformed Infrared Spectroscopy (FTIR) measurements were carried out. Characterization of the corrosion behavior was achieved by electrochemical impedance spectroscopy (EIS) and by potentio-dynamic polarization in Dulbecco's Modified Eagle's Medium (DMEM) at 37 °C. Surface analysis showed that all formed layers consist mainly of amorphous calcium phosphate compounds. For the immersion at room temperature the Ca/P ratio indicates the formation of HA, while in the incubator probably pre-stages to HA are formed. The different immersion conditions lead to a variation in layer thicknesses. However, electrochemical characterization shows that the layer thickness does not influence the corrosion resistance of magnesium. The main influencing factor for the corrosion behavior is the layer morphology. Thus, immersion at room temperature leads to the highest corrosion protection due to the formation of a compact outer layer. Layers formed in the incubator show much worse performances due to completely porous

Protective layer formation on magnesium in cell culture medium

International Nuclear Information System (INIS)

Wagener, V.; Virtanen, S.

2016-01-01

In the past, different studies showed that hydroxyapatite (HA) or similar calcium phosphates can be precipitated on Mg during immersion in simulated body fluids. However, at the same time, in most cases a dark grey or black layer is built under the white HA crystals. This layer seems to consist as well of calcium phosphates. Until now, neither the morphology nor its influence on Mg corrosion have been investigated in detail. In this work commercially pure magnesium (cp) was immersed in cell culture medium for one, three and five days at room temperature and in the incubator (37 °C, 5% CO_2). In addition, the influence of proteins on the formation of a corrosion layer was investigated by adding 20% of fetal calf serum (FCS) to the cell culture medium in the incubator. In order to analyze the formed layers, SEM images of cross sections, X-ray Photoelectron Spectroscopy (XPS), X-ray diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDX) and Fourier Transformed Infrared Spectroscopy (FTIR) measurements were carried out. Characterization of the corrosion behavior was achieved by electrochemical impedance spectroscopy (EIS) and by potentio-dynamic polarization in Dulbecco's Modified Eagle's Medium (DMEM) at 37 °C. Surface analysis showed that all formed layers consist mainly of amorphous calcium phosphate compounds. For the immersion at room temperature the Ca/P ratio indicates the formation of HA, while in the incubator probably pre-stages to HA are formed. The different immersion conditions lead to a variation in layer thicknesses. However, electrochemical characterization shows that the layer thickness does not influence the corrosion resistance of magnesium. The main influencing factor for the corrosion behavior is the layer morphology. Thus, immersion at room temperature leads to the highest corrosion protection due to the formation of a compact outer layer. Layers formed in the incubator show much worse performances due to completely porous structures. The

Tunneling measurements in amorphous layers of superconducting transition metals: molybdenum, vanadium, and niobium

International Nuclear Information System (INIS)

Roll, U.

1981-01-01

Tunneling experiments with amorphous Molybdenum and Vanadium layers are presented, showing no significant increase of the reduced energy gap 2δ(O)/kTsub(c)(δ) compared with the BCS-value, in contrast to all previous measurement on amorphous superconducting materials of simple s-p-metals, showing on enhanced electron-phonon-interaction. This fact may lead to the conclusion that the strong electron-phonon coupling is caused by the amorphous structure of the superconductor. The present results, however, indicate that the strong electron-phonon interaction cannot be explained only ba the amorphous structure of the superconductor. In the measurements of the second derivative d 2 U/dI 2 no phonon-induced structures have been observed for amorphous molybdenum, vanadium and niobium films. Apparently the phonon density of states F(#betta#) of amorphous transition metals has no structure, thus the longitudinal and transverse phonons cannot be identified in the measured (d 2 U/dI 2 )-curves. This particular behaviour of the amorphous transition metals in contrast to the simple s-p-metals may be interpreted by the strongly localized d-electrons. (orig./GG) [de

Rapid Thermal annealing of silicon layers amorphized by ion implantation

International Nuclear Information System (INIS)

Hasenack, C.M.

1986-01-01

The recrystallization behavior and the supression mechanisms of the residual defects of silicon layers amorphized by ion implantation, were investigated. The samples were annealed with the aid of a rapid thermal annealing (RTA) system at temperature range from 850 to 1200 0 C, and annealing time up to 120 s. Random and aligned Rutherford backscattering spectroscopy were used to analyse the samples. Similarities in the recrystallization behavior for layers implanted with ions of the same chemical groups such as As or Sb; Ge, Sn or Pb, In or Ga, are observed. The results show that the effective supression of resisual defects of the recrystallired layers is vinculated to the redistribution of impurities via thermal diffusion. (author) [pt

TEM study of amorphous alloys produced by ion implantation

International Nuclear Information System (INIS)

Johnson, E.; Grant, W.A.; Wohlenberg, P.; Hansen, P.; Chadderton, L.T.

1978-01-01

Ion implantation is a technique for introducing foreign elements into surface layers of solids. Ions, as a suitably accelerated beam, penetrate the surface, slow down by collisions with target atoms to produce a doped layer. This non-equilibrium technique can provide a wide range of alloys without the restrictions imposed by equilibrium phase diagrams. This paper reports on the production of some amorphous transition metal-metalloid alloys by implantation. Thinned foils of Ni, Fe and stainless steel were implanted at room temperature with Dy + and P + ions at doses between 10 13 - 10 17 ions/cm 2 at energies of 20 and 40 keV respectively. Transmission electron microscopy and selected area diffraction analysis were used to investigate the implanted specimens. Radial diffracted intensity measurements confirmed the presence of an amorphous implanted layer. The peak positions of the maxima are in good agreement with data for similar alloys produced by conventional techniques. Only certain ion/target combinations produce these amorphous layers. Implantations at doses lower than those needed for amorphization often result in formation of new crystalline phases such as an h.c.p. phase in nickel and a b.c.c. phase in stainless steel. (Auth.)

Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

International Nuclear Information System (INIS)

Munoz, D.; Voz, C.; Blanque, S.; Ibarz, D.; Bertomeu, J.; Alcubilla, R.

2009-01-01

In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances (ρ c ∼ 10 mΩ cm 2 ) have been obtained on 2.8 Ω cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.

Ion-beam induced structure modifications in amorphous germanium

International Nuclear Information System (INIS)

Steinbach, Tobias

2012-01-01

Object of the present thesis was the systematic study of ion-beam induced structure modifications in amorphous germanium (a-Ge) layers due to low- (LEI) and high-energetic (SHI) ion irradiation. The LEI irradiation of crystalline Ge (c-Ge) effects because the dominating nuclear scattering of the ions on the solid-state atoms the formation of a homogeneous a-Ge Layer. Directly on the surface for fluences of two orders of magnitude above the amorphization fluence the formation of stable cavities independently on the irradiation conditions was observed. For the first time for the ion-beam induced cavity formation respectively for the steady expansion of the porous layer forming with growing fluence a linear dependence on the energy ε n deposed in nuclear processes was detected. Furthermore the formation of buried cavities was observed, which shows a dependence on the type of ions. While in the c-Ge samples in the range of the high electronic energy deposition no radiation defects, cavities, or plastic deformations were observed, the high electronic energy transfer in the 3.1 μm thick pre-amorphized a-Ge surface layers leads to the formation of randomly distributed cavities. Basing on the linear connection between cavity-induced vertical volume expansion and the fluence determined for different energy transfers for the first time a material-specific threshold value of ε e HRF =(10.5±1.0) kev nm -1 was determined, above which the ion-beam induced cavity formation in a-Ge sets on. The anisotropic plastic deformation of th a-Ge layer superposed at inclined SHI irradiation on the cavity formation was very well described by an equation derived from the viscoelastic Maxwell model, but modified under regardment of the experimental results. The positive deformation yields determined thereby exhibit above a threshold value for the ion-beam induced plastic deformation ε e S a =(12±2) keV nm -1 for the first time extracted for a Ge the characteristic linear behaviour of the

Periodic molybdenum disc array for light trapping in amorphous silicon layer

Energy Technology Data Exchange (ETDEWEB)

Wang, Jiwei; Deng, Changkai [International Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 China (China); Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China (China); Yang, Kang; Chen, Haiyan, E-mail: chenhy@sari.ac.cn; Li, Dongdong; Chen, Xiaoyuan [Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China (China); Ren, Wei, E-mail: renwei@shu.edu.cn [International Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 China (China)

2016-05-15

We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO{sub 2}. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under light illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.

Formation of double layers

International Nuclear Information System (INIS)

Leung, P.; Wong, A.Y.; Quon, B.H.

1981-01-01

Experiments on both stationary and propagating double layers and a related analytical model are described. Stationary double layers were produced in a multiple plasma device, in which an electron drift current was present. An investigation of the plasma parameters for the stable double layer condition is described. The particle distribution in the stable double layer establishes a potential profile, which creates electron and ion beams that excite plasma instabilities. The measured characteristics of the instabilities are consistent with the existence of the double layer. Propagating double layers are formed when the initial electron drift current is large. Ths slopes of the transition region increase as they propagate. A physical model for the formation of a double layer in the experimental device is described. This model explains the formation of the low potential region on the basis of the space charge. This space charge is created by the electron drift current. The model also accounts for the role of ions in double layer formation and explains the formation of moving double layers. (Auth.)

Formation and structure of V-Zr amorphous alloy thin films

KAUST Repository

King, Daniel J M; Middleburgh, Simon C.; Liu, A. C Y; Tahini, Hassan Ali; Lumpkin, Gregory R.; Cortie, Michael B.

2015-01-01

. Atomic-scale modelling was used to investigate the enthalpies of formation of the various competing structures. The calculations confirmed that an amorphous solid solution would be significantly more stable than a random body-centred solid solution

Amorphous-like interfacial layer between a high-Tc superconducting Tl-1223 film and a Ag substrate examined by high-voltage high-resolution transmission electron microscopy

International Nuclear Information System (INIS)

Kim, Bongjun; Kim, Hyuntak; Nagai, Takuro; Matsui, Yoshio; Horiuchi, Shigeo; Jeong, Daeyeong; Deinhofer, Christian; Gritzner, Gerhard; Kim, Youngmin; Kim, Younjoong

2006-01-01

The thin amorphous-like layer, formed at the interface between a high-T c superconducting (Tl 0.5 , Pb 0.5 )(Sr 0.8 , Ba 0.2 )Ca 2 Cu 3 O y (Tl-1223) film and a Ag substrate during heating at 910 .deg. C, has been examined by using high-voltage high-resolution transmission electron microscopy. The interfacial layer is less than 10 nm in thickness. It contacts the (001) plane of Tl-1223 and the (113) or (133) planes of Ag in most cases. Its composition is similar to that of Tl-1223, except for the inclusion of a substantial amount of Ag. Its formation proceeds by diffusion of Ag into Tl-1223, during which a structure change first occurs at the layer of CuO 2 + Ca planes. The Tl(Pb)O + the Sr(Ba)O layers are then destroyed to cause the total structure to become amorphous-like. Furthermore, we have found that it is formed under an irradiation of highly energetic electrons.

Toward an understanding of surface layer formation, growth, and transformation at the glass-fluid interface

Science.gov (United States)

Hopf, J.; Eskelsen, J. R.; Chiu, M.; Ievlev, A. V.; Ovchinnikova, O. S.; Leonard, D.; Pierce, E. M.

2018-05-01

Silicate glass is a metastable and durable solid that has application to a number of energy and environmental challenges (e.g., microelectronics, fiber optics, and nuclear waste storage). If allowed to react with water over time silicate glass develops an altered layer at the solid-fluid interface. In this study, we used borosilicate glass (LAWB45) as a model material to develop a robust understanding of altered layer formation (i.e., amorphous hydrated surface layer and crystalline reaction products). Experiments were conducted at high surface area-to-volume ratio (∼200,000 m-1) and 90 °C in the pressurized unsaturated flow (PUF) apparatus for 1.5-years to facilitate the formation of thick altered layers and allow for the effluent solution chemistry to be monitored continuously. A variety of microscopy techniques were used to characterize reacted grains and suggest the average altered layer thickness is 13.2 ± 8.3 μm with the hydrated and clay layer representing 74.8% and 25.2% of the total altered layer, respectively. The estimate of hydrated layer thickness is within the experimental error of the value estimated from the B release rate data (∼10 ± 1 μm/yr) over the 1.5-year duration. PeakForce® quantitative nanomechanical mapping results suggest the hydrated layer has a modulus that ranges between ∼20 and 40 GPa, which is in the range of porous silica that contains from ∼20 to ∼50% porosity, yet significantly lower than dense silica (∼70-80 GPa). Scanning transmission electron microscopy (STEM) images confirm the presence of pores and an analysis of a higher resolution image provides a qualitative estimate of ≥22% porosity in the hydrated layer with variations in void volume with increasing distance from the unaltered glass. Chemical composition analyses, based on a combination of time-of-flight secondary-ion mass spectrometry (ToF-SIMS), scanning electron microscopy with X-ray energy dispersive spectroscopy (EDS), and STEM-EDS, clearly show

Fabrication of amorphous silicon nanoribbons by atomic force microscope tip-induced local oxidation for thin film device applications

International Nuclear Information System (INIS)

Pichon, L; Rogel, R; Demami, F

2010-01-01

We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as a mask for the elaboration of a thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as a mask during plasma etching of the amorphous layer leading to the formation of a nanoribbon. Such an amorphous silicon nanoribbon is used for the fabrication of the resistor

Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

International Nuclear Information System (INIS)

Yim, H.I.; Lee, S.Y.; Hwang, J.Y.; Rhee, J.R.; Chun, B.S.; Wang, K.L.; Kim, Y.K.; Kim, T.W.; Lee, S.S.; Hwang, D.G.

2008-01-01

Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer 10/AlO x /CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of +0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Mechanisms of aluminium-induced crystallization and layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers.

Science.gov (United States)

Wang, J Y; Wang, Z M; Jeurgens, L P H; Mittemeijer, E J

2009-06-01

Aluminium-induced crystallization (ALIC) of amorphous Si and subsequent layer exchange (ALILE) occur in amorphous-Si/polycrystalline-Al bilayers (a-Si/c-Al) upon annealing at temperatures as low as 165 degrees C and were studied by X-ray diffraction and Auger electron spectroscopic depth profiling. It follows that: (i) nucleation of Si crystallization is initiated at Al grain boundaries and not at the a-Si/c-Al interface; (ii) low-temperature annealing results in a large Si grain size in the continuous c-Si layer produced by ALILE. Thermodynamic model calculations show that: (i) Si can "wet" the Al grain boundaries due to the favourable a-Si/c-Al interface energy (as compared to the Al grain-boundary energy); (ii) the wetting-induced a-Si layer at the Al grain boundary can maintain its amorphous state only up to a critical thickness, beyond which nucleation of Si crystallization takes place; and (iii) a tiny driving force controls the kinetics of the layer exchange.

Achievement report for fiscal 1984 on Sunshine Program-entrusted research and development. Research and development of amorphous solar cells (Research on amorphous silicon interface); 1984 nendo amorphous taiyo denchi no kenkyu kaihatsu seika hokokusho. Amorphous silicon no kaimen no kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1985-03-01

As for the formation of amorphous semiconductors by photo-CVD (chemical vapor deposition) processes, details are examined of a-Si formed by the excimer laser-excited photo-CVD process, a-SiC formed by the directly excited photo-CVD process, a-SiGe formed by the mercury sensitized reaction photo-CVD process, and {mu}c-Si formed by the mercury-sensitized reaction photo-CVD process. It is then found that all of the said materials are superior to a product of the plasma CVD process in terms of film quality. As for the fabrication of amorphous Si solar cells by a photo-CVD process, a 3-separate-chamber unit is built, in which all the p-, I-, and n-layer are formed by photo-CVD. It is then found that the introduction of a buffer layer into the p/I interface is a powerful tool to enhance efficiency and that the use of the buffer zone brings about an increase of 9% or more in conversion efficiency. In the case of an amorphous solar cell using monosilane, buffer layer introduction results in a conversion efficiency of 9.05%. (NEDO)

Comparison of stress in single and multiple layer depositions of plasma-deposited amorphous silicon dioxide

International Nuclear Information System (INIS)

Au, V; Charles, C; Boswell, R W

2006-01-01

The stress in a single-layer continuous deposition of amorphous silicon dioxide (SiO 2 ) film is compared with the stress within multiple-layer intermittent or 'stop-start' depositions. The films were deposited by helicon activated reactive evaporation (plasma assisted deposition with electron beam evaporation source) to a 1 μm total film thickness. The relationships for stress as a function of film thickness for single, two, four and eight layer depositions have been obtained by employing the substrate curvature technique on a post-deposition etch-back of the SiO 2 film. At film thicknesses of less than 300 nm, the stress-thickness relationships clearly show an increase in stress in the multiple-layer samples compared with the relationship for the single-layer film. By comparison, there is little variation in the film stress between the samples when it is measured at 1 μm film thickness. Localized variations in stress were not observed in the regions where the 'stop-start' depositions occurred. The experimental results are interpreted as a possible indication of the presence of unstable, strained Si-O-Si bonds in the amorphous SiO 2 film. It is proposed that the subsequent introduction of a 'stop-start' deposition process places additional strain on these bonds to affect the film structure. The experimental stress-thickness relationships were reproduced independently by assuming a linear relationship between the measured bow and film thickness. The constants of the linear model are interpreted as an indication of the density of the amorphous film structure

Amorphization threshold in Si-implanted strained SiGe alloy layers

International Nuclear Information System (INIS)

Simpson, T.W.; Love, D.; Endisch, E.; Goldberg, R.D.; Mitchell, I.V.; Haynes, T.E.; Baribeau, J.M.

1994-12-01

The authors have examined the damage produced by Si-ion implantation into strained Si 1-x Ge x epilayers. Damage accumulation in the implanted layers was monitored in situ by time-resolved reflectivity and measured by ion channeling techniques to determine the amorphization threshold in strained Si 1-x Ge x (x = 0.16 and 0.29) over the temperature range 30--110 C. The results are compared with previously reported measurements on unstrained Si 1-x Ge x , and with the simple model used to describe those results. They report here data which lend support to this model and which indicate that pre-existing strain does not enhance damage accumulation in the alloy layer

Formation and structure of V-Zr amorphous alloy thin films

KAUST Repository

King, Daniel J M

2015-01-01

Although the equilibrium phase diagram predicts that alloys in the central part of the V-Zr system should consist of V2Zr Laves phase with partial segregation of one element, it is known that under non-equilibrium conditions these materials can form amorphous structures. Here we examine the structures and stabilities of thin film V-Zr alloys deposited at room temperature by magnetron sputtering. The films were characterized by X-ray diffraction, transmission electron microscopy and computational methods. Atomic-scale modelling was used to investigate the enthalpies of formation of the various competing structures. The calculations confirmed that an amorphous solid solution would be significantly more stable than a random body-centred solid solution of the elements, in agreement with the experimental results. In addition, the modelling effort provided insight into the probable atomic configurations of the amorphous structures allowing predictions of the average distance to the first and second nearest neighbours in the system.

Amorphous-like interfacial layer between a high-T{sub c} superconducting Tl-1223 film and a Ag substrate examined by high-voltage high-resolution transmission electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Kim, Bongjun; Kim, Hyuntak [Electronics and Tele-Communications Research Institute, Daejeon (Korea, Republic of); Nagai, Takuro; Matsui, Yoshio [National Institute for Materials Science, Tsukuba, Ibaraki (Japan); Horiuchi, Shigeo; Jeong, Daeyeong [Electrotechnology Research Institute, Changwon (Korea, Republic of); Deinhofer, Christian; Gritzner, Gerhard [Johannes Kepler University, Linz (Austria); Kim, Youngmin; Kim, Younjoong [Electron Microscopy Team, Korea Basic Science Institute, Daejeon (Korea, Republic of)

2006-05-15

The thin amorphous-like layer, formed at the interface between a high-T{sub c} superconducting (Tl{sub 0.5}, Pb{sub 0.5})(Sr{sub 0.8}, Ba{sub 0.2})Ca{sub 2}Cu{sub 3}O{sub y} (Tl-1223) film and a Ag substrate during heating at 910 .deg. C, has been examined by using high-voltage high-resolution transmission electron microscopy. The interfacial layer is less than 10 nm in thickness. It contacts the (001) plane of Tl-1223 and the (113) or (133) planes of Ag in most cases. Its composition is similar to that of Tl-1223, except for the inclusion of a substantial amount of Ag. Its formation proceeds by diffusion of Ag into Tl-1223, during which a structure change first occurs at the layer of CuO{sub 2} + Ca planes. The Tl(Pb)O + the Sr(Ba)O layers are then destroyed to cause the total structure to become amorphous-like. Furthermore, we have found that it is formed under an irradiation of highly energetic electrons.

A buffer-layer/a-SiO{sub x}:H(p) window-layer optimization for thin film amorphous silicon based solar cells

Energy Technology Data Exchange (ETDEWEB)

Park, Jinjoo; Dao, Vinh Ai [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Minbum; Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College West Campus, Ulsan 680-749 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2013-11-01

Amorphous silicon based (a-Si:H-based) solar cells with a buffer-layer/boron doped hydrogenated amorphous silicon oxide (a-SiO{sub x}:H(p)) window-layer were fabricated and investigated. In the first part, in order to reduce the Schottky barrier height at the fluorine doped tin oxide (FTO)/a-SiO{sub x}:H(p) window-layer heterointerface, we have used buffer-layer/a-SiO{sub x}:H(p) for the window-layer, in which boron doped hydrogenated amorphous silicon (a-Si:H(p)) or boron doped microcrystalline silicon (μc-Si:H(p)) is introduced as a buffer layer between the a-SiO{sub x}:H(p) and FTO of the a-Si:H-based solar cells. The a-Si:H-based solar cell using a μc-Si:H(p) buffer-layer shows the highest efficiency compared to the optimized bufferless, and a-Si:H(p) buffer-layer in the a-Si:H-based solar cells. This highest performance was attributed not only to the lower absorption of the μc-Si:H(p) buffer-layer but also to the lower Schottky barrier height at the FTO/window-layer interface. Then, we present the dependence of the built-in potential (V{sub bi}) and blue response of the devices on the inversion of activation energy (ξ) of the a-SiO{sub x}:H(p), in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. The enhancement of both V{sub bi} and blue response is observed, by increasing the value of ξ. The improvement of V{sub bi} and blue response can be ascribed to the enlargement of the optical gap of a-SiO{sub x}:H(p) films in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. Finally, the conversion efficiency was increased by 22.0%, by employing μc-Si:H(p) as a buffer-layer and raising the ξ of the a-SiO{sub x}:H(p), compared to the optimized bufferless case, with a 10 nm-thick a-SiO{sub x}:H(p) window-layer. - Highlights: • Low Schottky barrier height benefits fill factor, and open-circuit voltage (V{sub oc}). • High band gap is beneficial for short-circuit current density (J{sub sc}). • Boron doped microcrystalline silicon is a suitable buffer-layer for

Fabrication of luminescent porous silicon with stain etches and evidence that luminescence originates in amorphous layers

Science.gov (United States)

Fathauer, R. W.; George, T.; Ksendzov, A.; Lin, T. L.; Pike, W. T.; Vasquez, R. P.; Wu, Z.-C.

1992-01-01

Simple immersion of Si in stain etches of HF:HNO3:H2O or NaNO2 in aqueous HF was used to produce films exhibiting luminescence in the visible similar to that of anodically-etched porous Si. All of the luminescent samples consist of amorphous porous Si in at least the near surface region. No evidence was found for small crystalline regions within these amorphous layers.

Highly (002) textured large grain bcc Cr{sub 80}Mn{sub 20} seed layer on Cr{sub 50}Ti{sub 50} amorphous layer for FePt-C granular film

Energy Technology Data Exchange (ETDEWEB)

Jeon, Seong-Jae, E-mail: jsjigst@ecei.tohoku.ac.jp; Saito, Shin [Department of Electronic Engineering, Tohoku University, 6-6-05 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Hinata, Shintaro [Department of Electronic Engineering, Tohoku University, 6-6-05 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Japan Society for the Promotion of Science Research Fellow (PD), 5-3-1, Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Takahashi, Migaku [New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

2015-05-07

Effect of bcc Cr{sub 80}Mn{sub 20} seed layer and Cr{sub 50}Ti{sub 50} amorphous texture inducing layer on the heteroepitaxy system in FePt-C granular film was studied by introducing a new concept of the layered structure. The concept suggested that the large grain seed layer in which the crystallographic texture was initially formed on an amorphous layer in the layered structure can reduce the angular distribution of (002) c-axis crystal orientation in the FePt-C granular film owing to heteroepitaxial growth. Structure analysis by X-ray diffraction revealed that (1) when the substrate heating temperature was elevated from 300 °C to 500 °C, grain size in the seed layer increased from 9.8 nm to 11.6 nm, and then decreased with further increasing the substrate temperature. The reduction of the grain size over 500 °C corresponds to the crystallization of the amorphous texture inducing layer, (2) when the grain size increased from 9.8 nm to 11.6 nm, the angular distribution of the (002) orientation in the seed layer dramatically decreased from 13.7° to 4.1°. It was shown that the large grain seed layer increased the perpendicular hysteresis in FePt-C granular film.

Electrical properties of the regrown implantation-induced amorphous layer on (1 1-bar 0 0)- and (1 1 2-bar 0)-oriented 6H-SiC

International Nuclear Information System (INIS)

Nakamura, Tomonori; Tanabe, Hitoshi; Hitomi, Takeshi; Satoh, Masataka

2003-01-01

In the (1 1-bar 0 0) and (1 1 2-bar 0)-oriented 6H-SiC, the electrical properties and activation process of the implanted phosphorus in the layer regrown from the implantation-induced amorphous layer are investigated by means of Hall effect measurement and Rutherford backscattering spectrometry. The samples are implanted by 60 keV phosphorus ions at room temperature with doses of 3 x 10 15 and 1 x 10 15 cm -2 to form implantation-induced amorphous layer and the partially disordered implant-layer, respectively. The implanted phosphorus in the implantation-induced amorphous layer can be electrically activated by annealing at 1000 deg. C. The electrical activity for the case of the implantation-induced amorphous layer (ratio of sheet carrier concentration to ion dose) is 2-3 times larger than that for the case of the partially disordered implant-layer for the annealing temperature of 1500 deg. C

High-frequency permeability in double-layered structure of amorphous Co-Ta-Zr films

International Nuclear Information System (INIS)

Ochiai, Y.; Hayakawa, M.; Hayashi, K.; Aso, K.

1988-01-01

The high-frequency permeability of amorphous Co-Ta-Zr films was studied and the frequency dependence was described in terms of the eddy-current-loss formula. For the double-layered structure intervened with SiO 2 film, the degradation of the permeability became apparent with the decrease of SiO 2 thickness

Formation of apatite on hydrogenated amorphous silicon (a-Si:H) film deposited by plasma-enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Liu Xuanyong; Chu, Paul K.; Ding Chuanxian

2007-01-01

Hydrogenated amorphous silicon films were fabricated on p-type, 100 mm diameter silicon wafers by plasma-enhanced chemical vapor deposition (PECVD) using silane and hydrogen. The structure and composition of the hydrogenated amorphous silicon films were investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM). The hydrogenated amorphous silicon films were subsequently soaked in simulated body fluids to evaluate apatite formation. Carbonate-containing hydroxyapatite (bone-like apatite) was formed on the surface suggesting good bone conductivity. The amorphous structure and presence of surface Si-H bonds are believed to induce apatite formation on the surface of the hydrogenated amorphous silicon film. A good understanding of the surface bioactivity of silicon-based materials and means to produce a bioactive surface is important to the development of silicon-based biosensors and micro-devices that are implanted inside humans

Formation of apatite on hydrogenated amorphous silicon (a-Si:H) film deposited by plasma-enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Liu Xuanyong [Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China) and Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)]. E-mail: xyliu@mail.sic.ac.cn; Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)]. E-mail: paul.chu@cityu.edu.hk; Ding Chuanxian [Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)

2007-01-15

Hydrogenated amorphous silicon films were fabricated on p-type, 100 mm diameter <1 0 0> silicon wafers by plasma-enhanced chemical vapor deposition (PECVD) using silane and hydrogen. The structure and composition of the hydrogenated amorphous silicon films were investigated using micro-Raman spectroscopy and cross-sectional transmission electron microscopy (XTEM). The hydrogenated amorphous silicon films were subsequently soaked in simulated body fluids to evaluate apatite formation. Carbonate-containing hydroxyapatite (bone-like apatite) was formed on the surface suggesting good bone conductivity. The amorphous structure and presence of surface Si-H bonds are believed to induce apatite formation on the surface of the hydrogenated amorphous silicon film. A good understanding of the surface bioactivity of silicon-based materials and means to produce a bioactive surface is important to the development of silicon-based biosensors and micro-devices that are implanted inside humans.

Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells

Directory of Open Access Journals (Sweden)

Yang-Shin Lin

2011-01-01

Full Text Available The amorphous silicon/amorphous silicon (a-Si/a-Si tandem solar cells have attracted much attention in recent years, due to the high efficiency and low manufacturing cost compared to the single-junction a-Si solar cells. In this paper, the tandem cells are fabricated by high-frequency plasma-enhanced chemical vapor deposition (HF-PECVD at 27.1 MHz. The effects of the recombination layer and the i-layer thickness matching on the cell performance have been investigated. The results show that the tandem cell with a p+ recombination layer and i2/i1 thickness ratio of 6 exhibits a maximum efficiency of 9.0% with the open-circuit voltage (Voc of 1.59 V, short-circuit current density (Jsc of 7.96 mA/cm2, and a fill factor (FF of 0.70. After light-soaking test, our a-Si/a-Si tandem cell with p+ recombination layer shows the excellent stability and the stabilized efficiency of 8.7%.

Surface crystallization and magnetic properties of amorphous Fe80B20 alloy

International Nuclear Information System (INIS)

Vavassori, P.; Ronconi, F.; Puppin, E.

1997-01-01

We have studied the effects of surface crystallization on the magnetic properties of Fe 80 B 20 amorphous alloys. The surface magnetic properties have been studied with magneto-optic Kerr measurements, while those of bulk with a vibrating sample magnetometer. This study reveals that surface crystallization is similar to the bulk process but occurs at a lower temperature. At variance with previous results on other iron-based amorphous alloys the surface crystalline layer does not induce bulk magnetic hardening. Furthermore, both the remanence to saturation ratio and the bulk magnetic anisotropy do not show appreciable variations after the formation of the surface crystalline layer. The Curie temperature of the surface layer is lower with respect to the bulk of the sample. These effects can be explained by a lower boron concentration in the surface region of the as-cast amorphous alloy. Measurements of the chemical composition confirm a reduction of boron concentration in the surface region. copyright 1997 American Institute of Physics

Characteristics of magnetic tunnel junctions comprising ferromagnetic amorphous NiFeSiB layers

International Nuclear Information System (INIS)

Chun, B.S.; Kim, Y.K.; Hwang, J.Y.; Yim, H.I.; Rhee, J.R.; Kim, T.W.

2007-01-01

Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic Ni 16 Fe 62 Si 8 B 14 free layers, were investigated. NiFeSiB has a lower saturation magnetization (M s : 800 emu/cm 3 ) than Co 90 Fe 10 and a higher anisotropy constant (K u : 2700 erg/cm 3 ) than Ni 80 Fe 20 . By increasing the free layer thickness, the tunnel magnetoresistance (TMR) ratio of up to 41% was achieved and it exhibited a much lower switching field (H sw ) than the conventionally used CoFe free layer MTJ. Furthermore, by inserting a thin CoFe layer (1 nm) at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were enhanced

4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

International Nuclear Information System (INIS)

Dai, X.H.; Guo, J.X.; Zhang, L.; Jia, D.M.; Qi, C.G.; Zhou, Y.; Li, X.H.; Shi, J.B.; Fu, Y.J.; Wang, Y.L.; Lou, J.Z.; Ma, L.X.; Zhao, H.D.; Liu, B.T.

2015-01-01

Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La 0.5 Sr 0.5 CoO 3 /PbZr 0.4 Ti 0.6 O 3 /La 0.5 Sr 0.5 CoO 3 (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm 2 , small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories

4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

Energy Technology Data Exchange (ETDEWEB)

Dai, X.H. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Guo, J.X.; Zhang, L.; Jia, D.M.; Qi, C.G.; Zhou, Y.; Li, X.H.; Shi, J.B.; Fu, Y.J.; Wang, Y.L.; Lou, J.Z. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); Ma, L.X. [Department of Physics, Blinn College, Bryan, TX 77805 (United States); Zhao, H.D. [College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Liu, B.T., E-mail: btliu@hbu.cn [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China)

2015-10-05

Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/PbZr{sub 0.4}Ti{sub 0.6}O{sub 3}/La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm{sup 2}, small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories.

Broadband wavelength conversion in hydrogenated amorphous silicon waveguide with silicon nitride layer

Science.gov (United States)

Wang, Jiang; Li, Yongfang; Wang, Zhaolu; Han, Jing; Huang, Nan; Liu, Hongjun

2018-01-01

Broadband wavelength conversion based on degenerate four-wave mixing is theoretically investigated in a hydrogenated amorphous silicon (a-Si:H) waveguide with silicon nitride inter-cladding layer (a-Si:HN). We have found that enhancement of the non-linear effect of a-Si:H waveguide nitride intermediate layer facilitates broadband wavelength conversion. Conversion bandwidth of 490 nm and conversion efficiency of 11.4 dB were achieved in a numerical simulation of a 4 mm-long a-Si:HN waveguide under 1.55 μm continuous wave pumping. This broadband continuous-wave wavelength converter has potential applications in photonic networks, a type of readily manufactured low-cost highly integrated optical circuits.

Fabrication of Hydrogenated Amorphous Germanium Thin Layer Film and ItsCharacterization

International Nuclear Information System (INIS)

Agus-Santoso; Lely-Susita RM; Tjipto-Sujitno

2000-01-01

Fabrication of hydrogenated amorphous Germanium thin film by vacuumevaporation method and then deposition with hydrogen atom by glow dischargeplasma radio frequency has been done. This germanium amorphous (a-Ge) thinfilm involves a lot of dangling bonds in the network due to the irregularityof the atomic structures and it will decrease is conductivity. To improve theband properties of (a-Ge) thin film layer a hydrogenated plasma isintroduced. Process of introducing of the hydrogen into the a-Ge film is meanto reduce the dangling bonds so that the best electric conductivity of a Ge:Hthin film will obtained. To identify the hydrogen atom in the sample acharacterization using infrared spectrometer has been done, as well as themeasurement of conductivity of the samples. From the characterization usinginfrared spectroscopy the existence of hydrogen atom was found at absorptionpeak with wave number 1637.5 cm -1 , while the optimum conductivity of thesample 1634.86 Ω -1 cm -1 was achieved at 343 o K. (author)

Magnetotransport in spin-valve systems with amorphous magnetic and superconducting partial layers

International Nuclear Information System (INIS)

Steiner, Roland Johannes

2006-01-01

The first part of this work deals with the fabrication and characterisation of spin valves with an amorphous FeB layer acting as a weak ferromagnet embedded into the structure. In the second part of this work ferromagnet/superconductor hybrid structures are fabricated and the relevant magnetic field dependent transport phenomena are analyzed. The interlayer of a conventional spin valve was replaced by a superconducting niobium layer. Small applied fields close to the coercivity field of the involved ferromagnets - and thus far below the critical magnetic field of the superconductor - affected the critical temperature of the niobium layer. Measurements of the field dependent resistance and the critical temperature of a FM/SC/FMsystem showed a local maximum in the T c (H)- and the R(H)-curve. (orig.)

Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

Science.gov (United States)

Deligiannis, Dimitrios; van Vliet, Jeroen; Vasudevan, Ravi; van Swaaij, René A. C. M. M.; Zeman, Miro

2017-02-01

In this work, we use intrinsic hydrogenated amorphous silicon oxide layers (a-SiOx:H) with varying oxygen content (cO) but similar hydrogen content to passivate the crystalline silicon wafers. Using our deposition conditions, we obtain an effective lifetime (τeff) above 5 ms for cO ≤ 6 at. % for passivation layers with a thickness of 36 ± 2 nm. We subsequently reduce the thickness of the layers using an accurate wet etching method to ˜7 nm and deposit p- and n-type doped layers fabricating a device structure. After the deposition of the doped layers, τeff appears to be predominantly determined by the doped layers themselves and is less dependent on the cO of the a-SiOx:H layers. The results suggest that τeff is determined by the field-effect rather than by chemical passivation.

Structural transformation of implanted diamond layers during high temperature annealing

International Nuclear Information System (INIS)

Rubanov, S.; Fairchild, B.A.; Suvorova, A.; Olivero, P.; Prawer, S.

2015-01-01

In the recent years graphitization of ion-beam induced amorphous layers became the basic tool for device fabrication in diamond. The etchable graphitic layers can be removed to form free-standing membranes into which the desired structures can be sculpted using FIB milling. The optical properties of the devices fabricated using this method are assumed on the model of sharp diamond–air interface. The real quality of this interface could depend on degree of graphitization of the amorphous damage layers after annealing. In the present work the graphitization process was studied using conventional and analytical TEM. It was found that annealing at 550 °C results in a partial graphitization of the implanted volume with formation of the nano-crystalline graphitic phase sandwiched between layers of tetrahedral amorphous carbon. Annealing at 1400 °C resulted in complete graphitization of the amorphous layers. The average size of graphite nano-crystals did not exceed 5 nm with predominant orientation of c-planes normal to the sample surface.

Distribution of electrode elements near contacts and junction layers in amorphous silicon solar cell

Energy Technology Data Exchange (ETDEWEB)

Imura, T; Hiraki, A; Okamoto, H

1982-01-01

Auger electron spectroscopy with the ion sputter-etching technique and secondary ion mass spectroscopy have been utilized to investigate the depth distribution of Sn and In electrode elements in amorphous silicon layers of the photovoltaic device. The comparison of the depth profiles with the cell performances has indicated that the presence of the reduced state of In in both the p and i-layers affects the solar cell performance, but that of Sn does not. It was also shown that layered structure of In-Sn oxide (ITO)/SnO2 effectively prevents the diffusion of In and achieves high cell performances, having the thickness of the SnO2 layer about 200 A. 8 references.

Ion-beam induced structure modifications in amorphous germanium; Ionenstrahlinduzierte Strukturmodifikationen in amorphem Germanium

Energy Technology Data Exchange (ETDEWEB)

Steinbach, Tobias

2012-05-03

Object of the present thesis was the systematic study of ion-beam induced structure modifications in amorphous germanium (a-Ge) layers due to low- (LEI) and high-energetic (SHI) ion irradiation. The LEI irradiation of crystalline Ge (c-Ge) effects because the dominating nuclear scattering of the ions on the solid-state atoms the formation of a homogeneous a-Ge Layer. Directly on the surface for fluences of two orders of magnitude above the amorphization fluence the formation of stable cavities independently on the irradiation conditions was observed. For the first time for the ion-beam induced cavity formation respectively for the steady expansion of the porous layer forming with growing fluence a linear dependence on the energy {epsilon}{sub n} deposed in nuclear processes was detected. Furthermore the formation of buried cavities was observed, which shows a dependence on the type of ions. While in the c-Ge samples in the range of the high electronic energy deposition no radiation defects, cavities, or plastic deformations were observed, the high electronic energy transfer in the 3.1 {mu}m thick pre-amorphized a-Ge surface layers leads to the formation of randomly distributed cavities. Basing on the linear connection between cavity-induced vertical volume expansion and the fluence determined for different energy transfers for the first time a material-specific threshold value of {epsilon}{sub e}{sup HRF}=(10.5{+-}1.0) kev nm{sup -1} was determined, above which the ion-beam induced cavity formation in a-Ge sets on. The anisotropic plastic deformation of th a-Ge layer superposed at inclined SHI irradiation on the cavity formation was very well described by an equation derived from the viscoelastic Maxwell model, but modified under regardment of the experimental results. The positive deformation yields determined thereby exhibit above a threshold value for the ion-beam induced plastic deformation {epsilon}{sub e}{sup S{sub a}}=(12{+-}2) keV nm{sup -1} for the first

Characterization of amorphous yttria layers deposited by aqueous solutions of Y-chelate alkoxides complex

Energy Technology Data Exchange (ETDEWEB)

Kim, Young-Soon, E-mail: kyscjb@i-sunam.com; Lee, Yu-Ri; Kim, Byeong-Joo; Lee, Jae-Hun; Moon, Seung-Hyun; Lee, Hunju

2015-01-15

Highlights: • Economical method for crack-free amorphous yttria layer deposition by dip coating. • Simpler process for planar yttria film as a diffusion barrier and nucleation layer. • Easy control over the film properties with better characteristics. • Easy control over the thickness of the deposited films. • A feasible process that can be easily adopted by HTSCC industries. - Abstract: Crack-free amorphous yttria layers were deposited by dip coating in solutions of different Y-chelate alkoxides complex. Three Y-chelate solutions of different concentrations were prepared using yttrium acetate tetrahydrate, yttrium stearic acid as Y source materials. PEG, diethanolamine were used as chelating agents, while ethanol, methanol and tetradecane were used as solvent. Three different combinations of chelating and solvents were used to prepare solutions for Y{sub 2}O{sub 3} dip coating on SUS, electropolished and non-electropolished Hastelloy C-276 substrates. The thickness of the films was varied by changing the number of dipping cycles. At an optimized condition, the substrate surface roughness (rms) value was reduced from ∼50 nm to ∼1 nm over a 10 × 10 μm{sup 2} area. After Y{sub 2}O{sub 3} deposition, MgO was deposited using ion-beam assisted deposition (IBAD), then LaMnO{sub 3} (LMO) was deposited using sputtering and GdBCO was deposited using reactive co-evaporation by deposition and reaction (RCE-DR). Detailed X-ray study indicates that LMO/MgO/Y{sub 2}O{sub 3} and GdBCO/LMO/MgO/Y{sub 2}O{sub 3} stack films have good out-of-plane and in-plane textures with strong c-axis alignment. The critical current (Ic) of GdBCO/LMO/MgO/Y{sub 2}O{sub 3} multilayer structure varied from 190 to 420 A/cm with different solutions, when measured at 77 K. These results demonstrated that amorphous yttria can be easily deposited by dip coating using Y-chelates complex as a diffusion barrier and nucleation layer.

The crystalline-to-amorphous transition in ion-bombarded silicon

International Nuclear Information System (INIS)

Mueller, G.; Kalbitzer, S.

1980-01-01

Hydrogen-free, but defect-rich a-Si can be obtained by ion bombardment of c-Si. The formation of such material has been studied in detail using carrier-removal measurements in the characterization of the bombardment damage. In order to develop an overall view of the disordering process these data are discussed together with results obtained on similar films by Rutherford back-scattering, electron spin resonance, electron microscopy and optical measurements. It is concluded that amorphous material generally evolves from an intermediate crystalline phase supersaturated with point defects. The transition occurs locally at the sites of energetic ion impacts into critically predamaged crystalline material. As a consequence, an amorphous layer is built up from small clusters with dimensions typically of the order of 50 A. From the net expansion of the bombarded layers it is concluded that regions of lower atomic density are locally present, very likely a consequence of a structural mismatch between individual amorphous clusters. In this way a heterogeneous defect structure may build up in these films which determines their electronic properties. (author)

The dependence of the modulation transfer function on the blocking layer thickness in amorphous selenium x-ray detectors

International Nuclear Information System (INIS)

Hunter, David M.; Belev, Gueorgi; DeCrescenzo, Giovanni; Kasap, Safa O.; Mainprize, James G.; Rowlands, J. A.; Smith, Charles; Tuemer, Tuemay; Verpakhovski, Vladimir; Yin Shi; Yaffe, Martin J.

2007-01-01

Blocking layers are used to reduce leakage current in amorphous selenium detectors. The effect of the thickness of the blocking layer on the presampling modulation transfer function (MTF) and on dark current was experimentally determined in prototype single-line CCD-based amorphous selenium (a-Se) x-ray detectors. The sampling pitch of the detectors evaluated was 25 μm and the blocking layer thicknesses varied from 1 to 51 μm. The blocking layers resided on the signal collection electrodes which, in this configuration, were used to collect electrons. The combined thickness of the blocking layer and a-Se bulk in each detector was ∼200 μm. As expected, the dark current increased monotonically as the thickness of the blocking layer was decreased. It was found that if the blocking layer thickness was small compared to the sampling pitch, it caused a negligible reduction in MTF. However, the MTF was observed to decrease dramatically at spatial frequencies near the Nyquist frequency as the blocking layer thickness approached or exceeded the electrode sampling pitch. This observed reduction in MTF is shown to be consistent with predictions of an electrostatic model wherein the image charge from the a-Se is trapped at a characteristic depth within the blocking layer, generally near the interface between the blocking layer and the a-Se bulk

Inverted amorphous silicon solar cell utilizing cermet layers

Science.gov (United States)

Hanak, Joseph J.

1979-01-01

An amorphous silicon solar cell incorporating a transparent high work function metal cermet incident to solar radiation and a thick film cermet contacting the amorphous silicon opposite to said incident surface.

Swift heavy ion-beam induced amorphization and recrystallization of yttrium iron garnet

International Nuclear Information System (INIS)

Costantini, Jean-Marc; Miro, Sandrine; Beuneu, François; Toulemonde, Marcel

2015-01-01

Pure and (Ca and Si)-substituted yttrium iron garnet (Y 3 Fe 5 O 12 or YIG) epitaxial layers and amorphous films on gadolinium gallium garnet (Gd 3 Ga 5 O 12 , or GGG) single crystal substrates were irradiated by 50 MeV 32 Si and 50 MeV (or 60 MeV) 63 Cu ions for electronic stopping powers larger than the threshold value (∼4 MeV μm −1 ) for amorphous track formation in YIG crystals. Conductivity data of crystalline samples in a broad ion fluence range (10 11 –10 16 cm −2 ) are modeled with a set of rate equations corresponding to the amorphization and recrystallization induced in ion tracks by electronic excitations. The data for amorphous layers confirm that a recrystallization process takes place above ∼10 14 cm −2 . Cross sections for both processes deduced from this analysis are discussed in comparison to previous determinations with reference to the inelastic thermal-spike model of track formation. Micro-Raman spectroscopy was also used to follow the related structural modifications. Raman spectra show the progressive vanishing and randomization of crystal phonon modes in relation to the ion-induced damage. For crystalline samples irradiated at high fluences (⩾10 14 cm −2 ), only two prominent broad bands remain like for amorphous films, thereby reflecting the phonon density of states of the disordered solid, regardless of samples and irradiation conditions. The main band peaked at ∼660 cm −1 is assigned to vibration modes of randomized bonds in tetrahedral (FeO 4 ) units. (paper)

Single-layer and dual-layer contrast-enhanced mammography using amorphous selenium flat panel detectors

Energy Technology Data Exchange (ETDEWEB)

Allec, N; Abbaszadeh, S; Karim, K S, E-mail: nallec@uwaterloo.ca [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo N2L 3G1 (Canada)

2011-09-21

The accumulation of injected contrast agents allows the image enhancement of lesions through the use of contrast-enhanced mammography. In this technique, the combination of two acquired images is used to create an enhanced image. There exist several methods to acquire the images to be combined, which include dual energy subtraction using a single detection layer that suffers from motion artifacts due to patient motion between image acquisition. To mitigate motion artifacts, a detector composed of two layers may be used to simultaneously acquire the low and high energy images. In this work, we evaluate both of these methods using amorphous selenium as the detection material to find the system parameters (tube voltage, filtration, photoconductor thickness and relative intensity ratio) leading to the optimal performance. We then compare the performance of the two detectors under the variation of contrast agent concentration, tumor size and dose. The detectability was found to be most comparable at the lower end of the evaluated factors. The single-layer detector not only led to better contrast, due to its greater spectral separation capabilities, but also had lower quantum noise. The single-layer detector was found to have a greater detectability by a factor of 2.4 for a 2.5 mm radius tumor having a contrast agent concentration of 1.5 mg ml{sup -1} in a 4.5 cm thick 50% glandular breast. The inclusion of motion artifacts in the comparison is part of ongoing research efforts.

Single-layer and dual-layer contrast-enhanced mammography using amorphous selenium flat panel detectors

Science.gov (United States)

Allec, N.; Abbaszadeh, S.; Karim, K. S.

2011-09-01

The accumulation of injected contrast agents allows the image enhancement of lesions through the use of contrast-enhanced mammography. In this technique, the combination of two acquired images is used to create an enhanced image. There exist several methods to acquire the images to be combined, which include dual energy subtraction using a single detection layer that suffers from motion artifacts due to patient motion between image acquisition. To mitigate motion artifacts, a detector composed of two layers may be used to simultaneously acquire the low and high energy images. In this work, we evaluate both of these methods using amorphous selenium as the detection material to find the system parameters (tube voltage, filtration, photoconductor thickness and relative intensity ratio) leading to the optimal performance. We then compare the performance of the two detectors under the variation of contrast agent concentration, tumor size and dose. The detectability was found to be most comparable at the lower end of the evaluated factors. The single-layer detector not only led to better contrast, due to its greater spectral separation capabilities, but also had lower quantum noise. The single-layer detector was found to have a greater detectability by a factor of 2.4 for a 2.5 mm radius tumor having a contrast agent concentration of 1.5 mg ml-1 in a 4.5 cm thick 50% glandular breast. The inclusion of motion artifacts in the comparison is part of ongoing research efforts.

Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx.

Science.gov (United States)

Tsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, Yasuo

2018-02-14

We demonstrate that the inclusion of a Ta interfacial layer is a remarkably effective strategy for forming interfacial oxygen defects at metal/oxide junctions. The insertion of an interfacial layer of a reactive metal, that is, a "scavenging" layer, has been recently proposed as a way to create a high concentration of oxygen defects at an interface in redox-based resistive switching devices, and growing interest has been given to the underlying mechanism. Through structural and chemical analyses of Pt/metal/SrTiO 3 /Pt structures, we reveal that the rate and amount of oxygen scavenging are not directly determined by the formation free energies in the oxidation reactions of the scavenging metal and unveil the important roles of oxygen diffusibility. Active oxygen scavenging and highly uniform oxidation via scavenging are revealed for a Ta interfacial layer with high oxygen diffusibility. In addition, the Ta scavenging layer is shown to exhibit a highly uniform structure and to form a very flat interface with SrTiO 3 , which are advantageous for the fabrication of a steep metal/oxide contact.

Thermal oxidation of Zr–Cu–Al–Ni amorphous metal thin films

International Nuclear Information System (INIS)

Oleksak, R.P.; Hostetler, E.B.; Flynn, B.T.; McGlone, J.M.; Landau, N.P.; Wager, J.F.; Stickle, W.F.; Herman, G.S.

2015-01-01

The initial stages of thermal oxidation for Zr–Cu–Al–Ni amorphous metal thin films were investigated using X-ray photoelectron spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. The as-deposited films had oxygen incorporated during sputter deposition, which helped to stabilize the amorphous phase. After annealing in air at 300 °C for short times (5 min) this oxygen was found to segregate to the surface or buried interface. Annealing at 300 °C for longer times leads to significant composition variation in both vertical and lateral directions, and formation of a surface oxide layer that consists primarily of Zr and Al oxides. Surface oxide formation was initially limited by back-diffusion of Cu and Ni ( 30 min). The oxidation properties are largely consistent with previous observations of Zr–Cu–Al–Ni metallic glasses, however some discrepancies were observed which could be explained by the unique sample geometry of the amorphous metal thin films. - Highlights: • Thermal oxidation of amorphous Zr–Cu–Al–Ni thin films was investigated. • Significant short-range inhomogeneities were observed in the amorphous films. • An accumulation of Cu and Ni occurs at the oxide/metal interface. • Diffusion of Zr was found to limit oxide film growth.

A study of the formation of amorphous calcium phosphate and hydroxyapatite on melt quenched Bioglass using surface sensitive shallow angle X-ray diffraction.

Science.gov (United States)

Martin, R A; Twyman, H; Qiu, D; Knowles, J C; Newport, R J

2009-04-01

Melt quenched silicate glasses containing calcium, phosphorous and alkali metals have the ability to promote bone regeneration and to fuse to living bone. These glasses, including 45S5 Bioglass((R)) [(CaO)(26.9)(Na(2)O)(24.4)(SiO(2))(46.1)(P(2)O(5))(2.6)], are routinely used as clinical implants. Consequently there have been numerous studies on the structure of these glasses using conventional diffraction techniques. These studies have provided important information on the atomic structure of Bioglass((R)) but are of course intrinsically limited in the sense that they probe the bulk material and cannot be as sensitive to thin layers of near-surface dissolution/growth. The present study therefore uses surface sensitive shallow angle X-ray diffraction to study the formation of amorphous calcium phosphate and hydroxyapatite on Bioglass((R)) samples, pre-reacted in simulated body fluid (SBF). Unreacted Bioglass((R)) is dominated by a broad amorphous feature around 2.2 A(-1) which is characteristic of sodium calcium silicate glass. After reacting Bioglass((R)) in SBF a second broad amorphous feature evolves ~1.6 A(-1) which is attributed to amorphous calcium phosphate. This feature is evident for samples after only 4 h reacting in SBF and by 8 h the amorphous feature becomes comparable in magnitude to the background signal of the bulk Bioglass((R)). Bragg peaks characteristic of hydroxyapatite form after 1-3 days of reacting in SBF.

Irradiation induced crystalline to amorphous transition

International Nuclear Information System (INIS)

Bourgoin, J.

1980-01-01

Irradiation of a crystalline solid with energetic heavy particles results in cascades of defects which, with increasing dose, overlap and form a continuous disordered layer. In semiconductors the physical properties of such disordered layers are found to be similar to those of amorphous layers produced by evaporation. It is shown in the case of silicon, that the transition from a disordered crystalline (X) layer to an amorphous (α) layer occurs when the Gibbs energy of the X phase and of the defects it contains becomes larger than the Gibbs energy of the α phase. (author)

Crystallization of an amorphous Fe72Ni9Si8B11 alloy upon laser heating and isothermal annealing

International Nuclear Information System (INIS)

Girzhon, V.V.; Smolyakov, A.V.; Yastrebova, T.S.

2003-01-01

With the use of methods of x-ray diffraction, resistometric and metallographic analyses specific features of crystallization and phase formation in amorphous alloy Fe 72 Ni 9 Si 8 B 11 are studied under various heating conditions. It is shown that laser heating results in alloy crystallization by an explosive mechanism when attaining a certain density of irradiation power. It is stated that ribbon surface laser heating with simultaneous water cooling of an opposite surface allows manufacturing two-layer amorphous-crystalline structures of the amorphous matrix + α-(Fe, Si) - amorphous matrix type [ru

Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties

Energy Technology Data Exchange (ETDEWEB)

Datta, D. P.; Som, T., E-mail: tsom@iopb.res.in [SUNAG Laboratory, Institute of Physics, Bhubaneswar, Odisha 751 005 (India); Kanjilal, A. [Department of Physics, Shiv Nadar University, Uttar Pradesh 201 314 (India); Satpati, B. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Dhara, S. [Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India); Das, T. D. [Department of Electronic Science, University of Calcutta, APC Road, Kolkata 700 009 (India); Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)

2014-07-21

Room temperature implantation of 60 keV Ar{sup +}-ions in GaSb to the fluences of 7 × 10{sup 16} to 3 × 10{sup 18} ions cm{sup −2} is carried out at two incidence angles, viz 0° and 60°, leading to formation of a nanoporous layer. As the ion fluence increases, patches grow on the porous layer under normal ion implantation, whereas the porous layer gradually becomes embedded under a rough top surface for oblique incidence of ions. Grazing incidence x-ray diffraction and cross-sectional transmission electron microscopy studies reveal the existence of nanocrystallites embedded in the ion-beam amorphized GaSb matrix up to the highest fluence used in our experiment. Oxidation of the nanoporous layers becomes obvious from x-ray photoelectron spectroscopy and Raman mapping. The correlation of ion-beam induced structural modification with photoluminescence signals in the infrared region has further been studied, showing defect induced emission of additional peaks near the band edge of GaSb.

Evidence of amorphous interdiffusion layer in heavy ion irradiated U–8wt%Mo/Al interfaces

Energy Technology Data Exchange (ETDEWEB)

Chiang, H-Y. [Forschungsneutronenquelle Heinz Maier-Leibniz (FRM II), Technische Universität München Lichtenbergstr. 1, D-85747 Garching (Germany); Zweifel, T. [Forschungsneutronenquelle Heinz Maier-Leibniz (FRM II), Technische Universität München Lichtenbergstr. 1, D-85747 Garching (Germany); CEA, DEN, DEC, F-13108 St. Paul Lez Durance Cedex (France); Palancher, H., E-mail: herve.palancher@cea.fr [CEA, DEN, DEC, F-13108 St. Paul Lez Durance Cedex (France); Bonnin, A. [ESRF, 6 rue Jules Horowitz, 38042 Grenoble (France); Beck, L. [Tandembeschleuniger des Maier-Leibnitz-Labors (MLL), Am Coulombwall 6, D-85747 Garching (Germany); Weiser, P. [Walther Schottky Institut, Technische Universität München, Am Coulombwall 4, D-85747 Garching (Germany); Döblinger, M. [Department Chemie, Ludwig-Maximilians-Universität München (LMU), Butenandstr. 11, D-81377 München (Germany); Sabathier, C. [CEA, DEN, DEC, F-13108 St. Paul Lez Durance Cedex (France); Jungwirth, R.; Petry, W. [Forschungsneutronenquelle Heinz Maier-Leibniz (FRM II), Technische Universität München Lichtenbergstr. 1, D-85747 Garching (Germany)

2013-09-15

U–Mo/Al based nuclear fuels are worldwide considered as the most promising high density fuel for the conversion of high flux research and test reactors from highly enriched uranium to lower enrichment. However in-pile growth of an amorphous interdiffusion layer at the U–Mo/Al interfaces strongly limits the performances of this fuel. Several in-pile tests have been performed to optimize the composition. In this paper, a breakthrough in simulating the U–8wt%Mo/Al behavior under out-of-pile irradiation is reported. It is shown that an amorphous U–8wt%Mo/Al interdiffusion layer (IDL) is obtained by heavy ion irradiation ({sup 127}I) in a U–Mo/Al diffusion couple under controlled temperature conditions. The properties of this IDL coincide with the results obtained from in-pile tests. This methodological work clearly indicates that heavy ion irradiations could be routinely applied for optimizing composition of U–Mo/Al nuclear fuels. In other words these out-of-pile tests using ion beams could become a representative, efficient and economic step before in-pile irradiation.

Evidence of amorphous interdiffusion layer in heavy ion irradiated U–8wt%Mo/Al interfaces

International Nuclear Information System (INIS)

Chiang, H-Y.; Zweifel, T.; Palancher, H.; Bonnin, A.; Beck, L.; Weiser, P.; Döblinger, M.; Sabathier, C.; Jungwirth, R.; Petry, W.

2013-01-01

U–Mo/Al based nuclear fuels are worldwide considered as the most promising high density fuel for the conversion of high flux research and test reactors from highly enriched uranium to lower enrichment. However in-pile growth of an amorphous interdiffusion layer at the U–Mo/Al interfaces strongly limits the performances of this fuel. Several in-pile tests have been performed to optimize the composition. In this paper, a breakthrough in simulating the U–8wt%Mo/Al behavior under out-of-pile irradiation is reported. It is shown that an amorphous U–8wt%Mo/Al interdiffusion layer (IDL) is obtained by heavy ion irradiation ( 127 I) in a U–Mo/Al diffusion couple under controlled temperature conditions. The properties of this IDL coincide with the results obtained from in-pile tests. This methodological work clearly indicates that heavy ion irradiations could be routinely applied for optimizing composition of U–Mo/Al nuclear fuels. In other words these out-of-pile tests using ion beams could become a representative, efficient and economic step before in-pile irradiation

Colors and the evolution of amorphous galaxies

International Nuclear Information System (INIS)

Gallagher, J.S. III; Hunter, D.A.

1987-01-01

UBVRI and H-alpha photometric observations are presented for 16 amorphous galaxies and a comparison sample of Magellanic irregular (Im) and Sc spiral galaxies. These data are analyzed in terms of star-formation rates and histories in amorphous galaxies. Amorphous galaxies have mean global colors and star-formation rates per unit area that are similar to those in giant Im systems, despite differences in spatial distributions of star-forming centers in these two galactic structural classes. Amorphous galaxies differ from giant Im systems in having somewhat wider scatter in relationships between B - V and U - B colors, and between U - B and L(H-alpha)/L(B). This scatter is interpreted as resulting from rapid variations in star-formation rates during the recent past, which could be a natural consequence of the concentration of star-forming activity into centrally located, supergiant young stellar complexes in many amorphous galaxies. While the unusual spatial distribution and intensity of star formation in some amorphous galaxies is due to interactions with other galaxies, several amorphous galaxies are relatively isolated and thus the processes must be internal. The ultimate evolutionary fate of rapidly evolving amorphous galaxies remains unknown. 77 references

Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy

International Nuclear Information System (INIS)

Nepal, N.; Goswami, R.; Qadri, S.B.; Mahadik, N.A.; Kub, F.J.; Eddy, C.R.

2014-01-01

Recent results on atomic layer epitaxy (ALE) growth and characterization of (0 0 0 1)AlN on highly oriented (1 1 1)Pt layers on amorphous HfO 2 /Si(1 0 0) are reported. HfO 2 was deposited by atomic layer deposition on Si(1 0 0) followed by ALE growth of Pt(15 nm) and, subsequently, AlN(60 nm) at 500 °C. Based on the X-ray diffraction and transmission electron microscopy measurements, the Pt and AlN layers are highly oriented along the (1 1 1) and (0 0 0 2) directions, respectively. Demonstrations of AlN/Pt heterostructures open up the possibility of new state-of-the-art microelectromechanical systems devices

Formation of amorphous Ti-50at.%Pt by solid state reactions during mechanical alloying

CSIR Research Space (South Africa)

Mahlatji, ML

2013-10-01

Full Text Available Mechanical alloying of an equiatomic mixture of crystalline elemental powders of Ti and Pt in a high-energy ball mill results in formation of an amorphous alloy by solid-state reactions. Mechanical alloying was carried out in an argon atmosphere...

Solid-State Electrochromic Device Consisting of Amorphous WO3 and Various Thin Oxide Layers

Science.gov (United States)

Shizukuishi, Makoto; Shimizu, Isamu; Inoue, Eiichi

1980-11-01

A mixed oxide containing Cr2O3 was introduced into an amorphous WO3 solid-state electrochromic device (ECD) in order to improve its colour memory effect. The electrochromic characteristics were greatly affected by the chemical constituents of a dielectric layer on the a-WO3 layer. Particularly, long memory effect and low power dissipation were attained in a solid-state ECD consisting of a-WO3 and Cr2O3\\cdotV2O5(50 wt.%). Some electrochromic characteristics of the a-WO3/Cr2O3\\cdotV2O5 ECD and the role of V2O5 were investigated.

Production of amorphous metal layers using ion implantation and investigation of the related modification of some surface properties

International Nuclear Information System (INIS)

Hoang Dac Luc; Vu Hoang Lam.

1993-01-01

Amorphous layers were produced by implanting B + ions into Al at 50 keV. The modification of the electrochemical corrosion resistance and the mechanical strength of implanted specimen was investigated. (author). 2 refs, 1 tab, 2 figs

Amorphous drugs and dosage forms

DEFF Research Database (Denmark)

Grohganz, Holger; Löbmann, K.; Priemel, P.

2013-01-01

The transformation to an amorphous form is one of the most promising approaches to address the low solubility of drug compounds, the latter being an increasing challenge in the development of new drug candidates. However, amorphous forms are high energy solids and tend to recry stallize. New...... formulation principles are needed to ensure the stability of amorphous drug forms. The formation of solid dispersions is still the most investigated approach, but additional approaches are desirable to overcome the shortcomings of solid dispersions. Spatial separation by either coating or the use of micro-containers...... before single molecules are available for the formation of crystal nuclei, thus stabilizing the amorphous form....

Mechanical intermixing of components in (CoMoNi)-based systems and the formation of (CoMoNi)/WC nanocomposite layers on Ti sheets under ball collisions

Science.gov (United States)

Romankov, S.; Park, Y. C.; Shchetinin, I. V.

2017-11-01

Cobalt (Co), molybdenum (Mo), and nickel (Ni) components were simultaneously introduced onto titanium (Ti) surfaces from a composed target using ball collisions. Tungsten carbide (WC) balls were selected for processing as the source of a cemented carbide reinforcement phase. During processing, ball collisions continuously introduced components from the target and the grinding media onto the Ti surface and induced mechanical intermixing of the elements, resulting in formation of a complex nanocomposite structure onto the Ti surface. The as-fabricated microstructure consisted of uniformly dispersed WC particles embedded within an integrated metallic matrix composed of an amorphous phase with nanocrystalline grains. The phase composition of the alloyed layers, atomic reactions, and the matrix grain sizes depended on the combination of components introduced onto the Ti surface during milling. The as-fabricated layer exhibited a very high hardness compared to industrial metallic alloys and tool steel materials. This approach could be used for the manufacture of both cemented carbides and amorphous matrix composite layers.

Convective heat transfer enhancement using Carbon nanofibers (CNFs): influence of amorphous carbon layer on heat transfer performance

NARCIS (Netherlands)

Taha, T.J.; Lefferts, Leonardus; van der Meer, Theodorus H.

2013-01-01

In this work, an experimental heat transfer investigation was carried out to investigate the combined influence of both amorphous carbon (a-C) layer thickness and carbon nanofibers (CNFs) on the convective heat transfer behavior. Synthesis of these carbon nano structures was achieved using catalytic

Characterization of oxide layers on amorphous Mg-based alloys by Auger electron spectroscopy with sputter depth profiling

Energy Technology Data Exchange (ETDEWEB)

Baunack, S.; Wolff, U. [Leibniz-Institut fuer Festkoerper- und Werkstoffforschung Dresden, Postfach 270016, 01171, Dresden (Germany); Subba Rao, R.V. [Indira Ghandi Centre for Atomic Research, 603 102, Kalpakkam, Tamil Nadu (India)

2003-04-01

Amorphous ribbons of Mg-Y-TM-[Ag](TM: Cu, Ni), prepared by melt spinning, were subjected to electrochemical investigations. Oxide layers formed anodically under potentiostatic control in different electrolytes were investigated by AES and sputter depth profiling. Problems and specific features of characterization of the composition of oxide layers and amorphous ternary or quaternary Mg-based alloys have been investigated. In the alloys the Mg(KL{sub 23}L{sub 23}) peak exhibits a different shape compared to that in the pure element. Analysis of the peak of elastically scattered electrons proved the absence of plasmon loss features, characteristic of pure Mg, in the alloy. A different loss feature emerges in Mg(KL{sub 23}L{sub 23}) and Cu(L{sub 23}VV). The system Mg-Y-TM-[Ag] suffers preferential sputtering. Depletion of Mg and enrichment of TM and Y are found. This is attributed mainly to the preferential sputtering of Mg. Thickness and composition of the formed oxide layer depend on the electrochemical treatment. After removing the oxide by sputtering the concentration of the underlying alloy was found to be affected by the treatment. (orig.)

Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

International Nuclear Information System (INIS)

Arora, H.; Malinowski, P. E.; Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S.; Heremans, P.

2015-01-01

Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm 2 at a bias voltage of −2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C 61 -butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 10 12 Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiO x as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment

Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

Energy Technology Data Exchange (ETDEWEB)

Arora, H. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Phelma–Grenoble INP, 3 Parvis Louis Néel, 38016 Grenoble Cedex 01 (France); Malinowski, P. E., E-mail: pawel.malinowski@imec.be; Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Heremans, P. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); ESAT, Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, B-3001 Leuven (Belgium)

2015-04-06

Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm{sup 2} at a bias voltage of −2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C{sub 61}-butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 10{sup 12} Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiO{sub x} as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment.

Amorphous Tin Oxide as a Low-Temperature-Processed Electron-Transport Layer for Organic and Hybrid Perovskite Solar Cells

KAUST Repository

Barbe, Jeremy; Tietze, Max Lutz; Neophytou, Marios; Banavoth, Murali; Alarousu, Erkki; El Labban, Abdulrahman; Abulikemu, Mutalifu; Yue, Wan; Mohammed, Omar F.; McCulloch, Iain; Amassian, Aram; Del Gobbo, Silvano

2017-01-01

Chemical bath deposition (CBD) of tin oxide (SnO) thin films as an electron-transport layer (ETL) in a planar-heterojunction n-i-p organohalide lead perovskite and organic bulk-heterojunction (BHJ) solar cells is reported. The amorphous SnO (a

Amorphous Ultrathin SnO2 Films by Atomic Layer Deposition on Graphene Network as Highly Stable Anodes for Lithium-Ion Batteries.

Science.gov (United States)

Xie, Ming; Sun, Xiang; George, Steven M; Zhou, Changgong; Lian, Jie; Zhou, Yun

2015-12-23

Amorphous SnO2 (a-SnO2) thin films were conformally coated onto the surface of reduced graphene oxide (G) using atomic layer deposition (ALD). The electrochemical characteristics of the a-SnO2/G nanocomposites were then determined using cyclic voltammetry and galvanostatic charge/discharge curves. Because the SnO2 ALD films were ultrathin and amorphous, the impact of the large volume expansion of SnO2 upon cycling was greatly reduced. With as few as five formation cycles best reported in the literature, a-SnO2/G nanocomposites reached stable capacities of 800 mAh g(-1) at 100 mA g(-1) and 450 mAh g(-1) at 1000 mA g(-1). The capacity from a-SnO2 is higher than the bulk theoretical values. The extra capacity is attributed to additional interfacial charge storage resulting from the high surface area of the a-SnO2/G nanocomposites. These results demonstrate that metal oxide ALD on high surface area conducting carbon substrates can be used to fabricate high power and high capacity electrode materials for lithium-ion batteries.

Formation of Micro and Mesoporous Amorphous Silica-Based Materials from Single Source Precursors

Directory of Open Access Journals (Sweden)

Mohd Nazri Mohd Sokri

2016-03-01

Full Text Available Polysilazanes functionalized with alkoxy groups were designed and synthesized as single source precursors for fabrication of micro and mesoporous amorphous silica-based materials. The pyrolytic behaviors during the polymer to ceramic conversion were studied by the simultaneous thermogravimetry-mass spectrometry (TG-MS analysis. The porosity of the resulting ceramics was characterized by the N2 adsorption/desorption isotherm measurements. The Fourier transform infrared spectroscopy (FT-IR and Raman spectroscopic analyses as well as elemental composition analysis were performed on the polymer-derived amorphous silica-based materials, and the role of the alkoxy group as a sacrificial template for the micro and mesopore formations was discussed from a viewpoint to establish novel micro and mesoporous structure controlling technologies through the polymer-derived ceramics (PDCs route.

Ion beam induced stress formation and relaxation in germanium

Energy Technology Data Exchange (ETDEWEB)

Steinbach, T., E-mail: Tobias.Steinbach@uni-jena.de [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany); Reupert, A.; Schmidt, E.; Wesch, W. [Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

2013-07-15

Ion irradiation of crystalline solids leads not only to defect formation and amorphization but also to mechanical stress. In the past, many investigations in various materials were performed focusing on the ion beam induced damage formation but only several experiments were done to investigate the ion beam induced stress evolution. Especially in microelectronic devices, mechanical stress leads to several unwanted effects like cracking and peeling of surface layers as well as changing physical properties and anomalous diffusion of dopants. To study the stress formation and relaxation process in semiconductors, crystalline and amorphous germanium samples were irradiated with 3 MeV iodine ions at different ion fluence rates. The irradiation induced stress evolution was measured in situ with a laser reflection technique as a function of ion fluence, whereas the damage formation was investigated by means of Rutherford backscattering spectrometry. The investigations show that mechanical stress builds up at low ion fluences as a direct consequence of ion beam induced point defect formation. However, further ion irradiation causes a stress relaxation which is attributed to the accumulation of point defects and therefore the creation of amorphous regions. A constant stress state is reached at high ion fluences if a homogeneous amorphous surface layer was formed and no further ion beam induced phase transition took place. Based on the results, we can conclude that the ion beam induced stress evolution seems to be mainly dominated by the creation and accumulation of irradiation induced structural modification.

Amorphization of silicon by femtosecond laser pulses

International Nuclear Information System (INIS)

Jia, Jimmy; Li Ming; Thompson, Carl V.

2004-01-01

We have used femtosecond laser pulses to drill submicron holes in single crystal silicon films in silicon-on-insulator structures. Cross-sectional transmission electron microscopy and energy dispersive x-ray analysis of material adjacent to the ablated holes indicates the formation of a layer of amorphous Si. This demonstrates that even when material is ablated using femtosecond pulses near the single pulse ablation threshold, sufficient heating of the surrounding material occurs to create a molten zone which solidifies so rapidly that crystallization is bypassed

Glassy formation ability, magnetic properties and magnetocaloric effect in Al27Cu18Er55 amorphous ribbon

Science.gov (United States)

Li, Lingwei; Xu, Chi; Yuan, Ye; Zhou, Shengqiang

2018-05-01

In this work, we have fabricated the Al27Cu18Er55 amorphous ribbon with good glassy formation ability by melt-spinning technology. A broad paramagnetic (PM) to ferromagnetic (FM) transition (second ordered) together with a large reversible magnetocaloric effect (MCE) in Al27Cu18Er55 amorphous ribbon was observed around the Curie temperature TC ∼ 11 K. Under the magnetic field change (ΔH of 0-7 T, the values of MCE parameter of the maximum magnetic entropy change (-ΔSMmax) and refrigerant capacity (RC) for Al27Cu18Er55 amorphous ribbon reach 21.4 J/kg K and 599 J/kg, respectively. The outstanding glass forming ability as well as the excellent magneto-caloric properties indicate that Al27Cu18Er55 amorphous could be a good candidate for low temperature magnetic refrigeration.

Deep subgap feature in amorphous indium gallium zinc oxide: Evidence against reduced indium

International Nuclear Information System (INIS)

Sallis, Shawn; Williams, Deborah S.; Quackenbush, Nicholas F.; Senger, Mikell; Woicik, Joseph C.; White, Bruce E.; Piper, Louis F.J.

2015-01-01

Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. Despite the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. Here, we present evidence against In + lone pair active electrons as the origin of the deep subgap features. No In + species are observed, only In 0 nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Theory of amorphous ices.

Science.gov (United States)

Limmer, David T; Chandler, David

2014-07-01

We derive a phase diagram for amorphous solids and liquid supercooled water and explain why the amorphous solids of water exist in several different forms. Application of large-deviation theory allows us to prepare such phases in computer simulations. Along with nonequilibrium transitions between the ergodic liquid and two distinct amorphous solids, we establish coexistence between these two amorphous solids. The phase diagram we predict includes a nonequilibrium triple point where two amorphous phases and the liquid coexist. Whereas the amorphous solids are long-lived and slowly aging glasses, their melting can lead quickly to the formation of crystalline ice. Further, melting of the higher density amorphous solid at low pressures takes place in steps, transitioning to the lower-density glass before accessing a nonequilibrium liquid from which ice coarsens.

Enhanced formation of Ge nanocrystals in Ge : SiO2 layers by swift heavy ions

International Nuclear Information System (INIS)

Antonova, I V; Volodin, V A; Marin, D M; Skuratov, V A; Smagulova, S A; Janse van Vuuren, A; Neethling, J; Jedrzejewski, J; Balberg, I

2012-01-01

In this paper we report the ability of swift heavy Xe ions with an energy of 480 MeV and a fluence of 10 12 cm -2 to enhance the formation of Ge nanocrystals within SiO 2 layers with variable Ge contents. These Ge-SiO 2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge : SiO 2 films with subsequent annealing at 500 °C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5 nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550 °C and post-irradiation annealing at 600 °C, which also leads to the observation of room temperature visible photoluminescence. (paper)

Model for amorphous aggregation processes

Science.gov (United States)

Stranks, Samuel D.; Ecroyd, Heath; van Sluyter, Steven; Waters, Elizabeth J.; Carver, John A.; von Smekal, Lorenz

2009-11-01

The amorphous aggregation of proteins is associated with many phenomena, ranging from the formation of protein wine haze to the development of cataract in the eye lens and the precipitation of recombinant proteins during their expression and purification. While much literature exists describing models for linear protein aggregation, such as amyloid fibril formation, there are few reports of models which address amorphous aggregation. Here, we propose a model to describe the amorphous aggregation of proteins which is also more widely applicable to other situations where a similar process occurs, such as in the formation of colloids and nanoclusters. As first applications of the model, we have tested it against experimental turbidimetry data of three proteins relevant to the wine industry and biochemistry, namely, thaumatin, a thaumatinlike protein, and α -lactalbumin. The model is very robust and describes amorphous experimental data to a high degree of accuracy. Details about the aggregation process, such as shape parameters of the aggregates and rate constants, can also be extracted.

Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Gencarelli, F., E-mail: federica.gencarelli@imec.be [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium); Shimura, Y. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Kumar, A. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Vincent, B.; Moussa, A.; Vanhaeren, D.; Richard, O.; Bender, H. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, W. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Caymax, M.; Loo, R. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, M. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium)

2015-09-01

In this work, we discuss the characteristics of particular island-type features with an amorphous core that are developed during the low temperature epitaxial growth of Ge and GeSn layers by means of chemical vapor deposition with Ge{sub 2}H{sub 6}. Although further investigations are needed to unambiguously identify the origin of these features, we suggest that they are originated by the formation of clusters of H and/or contaminants atoms during growth. These would initially cause the formation of pits with crystalline rough facets over them, resulting in ring-shaped islands. Then, when an excess surface energy is overcome, an amorphous phase would nucleate inside the pits and fill them. Reducing the pressure and/or increasing the growth temperature can be effective ways to prevent the formation of these features, likely due to a reduction of the surface passivation from H and/or contaminant atoms. - Highlights: • Island features with amorphous cores develop during low T Ge(Sn) CVD with Ge{sub 2}H{sub 6.} • These features are thoroughly characterized in order to understand their origin. • A model is proposed to describe the possible evolution of these features. • Lower pressures and/or higher temperatures avoid the formation of these features.

Glass solution formation in water - In situ amorphization of naproxen and ibuprofen with Eudragit® E PO

DEFF Research Database (Denmark)

Doreth, Maria; Löbmann, Korbinian; Grohganz, Holger

2016-01-01

is applicable to other drugs. Compacts of drug and Eudragit® E were compressed at a 2:1, 1:1 and 1:2 drug-to-polymer ratio (w/w) and immersed in water for 1 h. Physicochemical characteristics, potential interactions and dissolution behavior were analyzed and compared to non-immersed compacts. Both drugs formed...... a glass solution with Eudragit® E when immersed into water. In XRPD, reflections of the respective drugs decreased or disappeared completely. All samples showed a single glass transition temperature in the DSC, suggesting the formation of single phase amorphous systems. Ionic interactions between drug...... and polymer were identified by infrared spectroscopy. In the dissolution study (pH 4.1), especially the 1:1 (w/w) in situ amorphized samples showed an improved dissolution behavior compared to their non-immersed counterparts. It can be concluded that in situ amorphization is a promising method to amorphize...

Properties of p-type amorphous silicon carbide window layers prepared using boron trifluoride

Energy Technology Data Exchange (ETDEWEB)

Gandia, J J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gutierrez, M T [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Carabe, J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain)

1993-03-01

One set (A) of undoped and three sets (B, C and D) of doped hydrogenated amorphous silicon carbide samples have been made in the framework of a research plan for obtaining high quality p-type window layers by radiofrequency glow discharge of silane-based gas mixtures. The samples of sets A and B were made using different RF-power-density to mass-flow ratios for various methane percentages in the gas mixture. The best carbon incorporation in the amorphous silicon lattice was obtained at the highest RF-power density. The properties of sets C and D, prepared using different RF-power densities and silane and methane proportions have been analysed as functions of the concentration of boron trifluoride with respect to silane. In both cases, the optical gap E[sub G], after a slight initial decrease, remains at a value of approximately 2.1 eV without quenching in the doping ranges covered. The best conductivity obtained is 2x10[sup -7] ([Omega] cm)[sup -1]. IR spectra allow to associate these features with the structural quality of the films. (orig.)

First-principles study of crystalline and amorphous AlMgB14-based materials

International Nuclear Information System (INIS)

Ivashchenko, V. I.; Shevchenko, V. I.; Turchi, P. E. A.; Veprek, S.; Leszczynski, Jerzy; Gorb, Leonid; Hill, Frances

2016-01-01

We report first-principles investigations of crystalline and amorphous boron and M1 x M2 y X z B 14−z (M1, M2 = Al, Mg, Li, Na, Y; X = Ti, C, Si) phases (so-called “BAM” materials). Phase stability is analyzed in terms of formation energy and dynamical stability. The atomic configurations as well as the electronic and phonon density states of these phases are compared. Amorphous boron consists of distorted icosahedra, icosahedron fragments, and dioctahedra, connected by an amorphous network. The presence of metal atoms in amorphous BAM materials precludes the formation of icosahedra. For all the amorphous structures considered here, the Fermi level is located in the mobility gap independent of the number of valence electrons. The intra-icosahedral vibrations are localized in the range of 800 cm −1 , whereas the inter-icosahedral vibrations appear at higher wavenumbers. The amorphization leads to an enhancement of the vibrations in the range of 1100–1250 cm −1 . The mechanical properties of BAM materials are investigated at equilibrium and under shear and tensile strain. The anisotropy of the ideal shear and tensile strengths is explained in terms of a layered structure of the B 12 units. The strength of amorphous BAM materials is lower than that of the crystalline counterparts because of the partial fragmentation of the boron icosahedra in amorphous structures. The strength enhancement found experimentally for amorphous boron-based films is very likely related to an increase in film density, and the presence of oxygen impurities. For crystalline BAM materials, the icosahedra are preserved during elongation upon tension as well as upon shear in the (010)[100] slip system.

Deep subgap feature in amorphous indium gallium zinc oxide: Evidence against reduced indium

Energy Technology Data Exchange (ETDEWEB)

Sallis, Shawn; Williams, Deborah S. [Materials Science and Engineering, Binghamton University, Binghamton, New York, 13902 (United States); Quackenbush, Nicholas F.; Senger, Mikell [Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York, 13902 (United States); Woicik, Joseph C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland, 20899 (United States); White, Bruce E.; Piper, Louis F.J. [Materials Science and Engineering, Binghamton University, Binghamton, New York, 13902 (United States); Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York, 13902 (United States)

2015-07-15

Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. Despite the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. Here, we present evidence against In{sup +} lone pair active electrons as the origin of the deep subgap features. No In{sup +} species are observed, only In{sup 0} nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure

Energy Technology Data Exchange (ETDEWEB)

Liu, Po-Tsun, E-mail: ptliu@mail.nctu.edu.tw; Chang, Chih-Hsiang; Chang, Chih-Jui [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

2016-06-27

This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO{sub 2} backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS.

Direct observation of nanometer-scale amorphous layers and oxide crystallites at grain boundaries in polycrystalline Sr1−xKxFe2As2 superconductors

KAUST Repository

Wang, Lei

2011-06-01

We report here an atomic resolution study of the structure and composition of the grain boundaries in polycrystallineSr0.6K0.4Fe2As2superconductor. A large fraction of grain boundaries contain amorphous layers larger than the coherence length, while some others contain nanometer-scale crystallites sandwiched in between amorphous layers. We also find that there is significant oxygen enrichment at the grain boundaries. Such results explain the relatively low transport critical current density (Jc) of polycrystalline samples with respect to that of bicrystal films.

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

Directory of Open Access Journals (Sweden)

Haiting Xie

2017-10-01

Full Text Available The nitrogen-doped amorphous oxide semiconductor (AOS thinfilm transistors (TFTs with double-stacked channel layers (DSCL were prepared and characterized. The DSCL structure was composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N and gave the corresponding TFT devices large field-effect mobility due to the presence of double conduction channels. The a-IZO:N/a-IGZO:N TFTs, in particular, showed even better electrical performance (µFE = 15.0 cm2・V−1・s−1, SS = 0.5 V/dec, VTH = 1.5 V, ION/IOFF = 1.1 × 108 and stability (VTH shift of 1.5, −0.5 and −2.5 V for positive bias-stress, negative bias-stress, and thermal stress tests, respectively than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, we assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might explain the better behavior of the corresponding TFTs.

Amorphous silicon radiation detectors

Science.gov (United States)

Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

1992-01-01

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

Temperature stable LiNbO3 surface acoustic wave device with diode sputtered amorphous TeO2 over-layer

International Nuclear Information System (INIS)

Dewan, Namrata; Tomar, Monika; Gupta, Vinay; Sreenivas, K.

2005-01-01

Amorphous TeO 2 thin film, sputtered in the O 2 +Ar(25%+75%) gas environment using a metallic tellurium target, has been identified as an attractive negative temperature coefficient of delay (TCD) material that can yield a temperature stable device when combined with a surface acoustic wave (SAW) device based on positive TCD material such as LiNbO 3 . The influence of amorphous TeO 2 over-layer on the SAW propagation characteristics (velocity and temperature coefficient of delay) of the SAW filters (36 and 70 MHz) based on 128 deg. rotated Y-cut X-propagating lithium niobate (128 deg. Y-X LiNbO 3 ) single crystal has been studied. It is found that 0.042 λ thick TeO 2 over-layer on a prefabricated SAW device operating at 36 MHz centre frequency, reduces the TCD of the device from 76 ppm deg. C -1 to almost zero (∼1.4 ppm deg. C -1 ) without deteriorating its efficiency and could be considered as a suitable alternative for temperature stable devices in comparison to conventional SiO 2 over-layer

First-principles study of crystalline and amorphous AlMgB{sub 14}-based materials

Energy Technology Data Exchange (ETDEWEB)

Ivashchenko, V. I.; Shevchenko, V. I., E-mail: shev@materials.kiev.ua [Institute of Problems of Material Science, National Academy of Science of Ukraine, Krzhyzhanosky Str. 3, 03142 Kyiv (Ukraine); Turchi, P. E. A. [Lawrence Livermore National Laboratory (L-352), P.O. Box 808, Livermore, California 94551 (United States); Veprek, S. [Department of Chemistry, Technical University Munich, Lichtenbergstrasse 4, D-85747 Garching (Germany); Leszczynski, Jerzy [Department of Chemistry and Biochemistry, Interdisciplinary Center for Nanotoxicity, Jackson State University, Jackson, Mississippi 39217 (United States); Gorb, Leonid [Department of Chemistry and Biochemistry, Interdisciplinary Center for Nanotoxicity, Jackson State University, Jackson, Mississippi 39217 (United States); Badger Technical Services, LLC, Vicksburg, Mississippi 39180 (United States); Hill, Frances [U.S. Army ERDC, Vicksburg, Mississippi 39180 (United States)

2016-05-28

We report first-principles investigations of crystalline and amorphous boron and M1{sub x}M2{sub y}X{sub z}B{sub 14−z} (M1, M2 = Al, Mg, Li, Na, Y; X = Ti, C, Si) phases (so-called “BAM” materials). Phase stability is analyzed in terms of formation energy and dynamical stability. The atomic configurations as well as the electronic and phonon density states of these phases are compared. Amorphous boron consists of distorted icosahedra, icosahedron fragments, and dioctahedra, connected by an amorphous network. The presence of metal atoms in amorphous BAM materials precludes the formation of icosahedra. For all the amorphous structures considered here, the Fermi level is located in the mobility gap independent of the number of valence electrons. The intra-icosahedral vibrations are localized in the range of 800 cm{sup −1}, whereas the inter-icosahedral vibrations appear at higher wavenumbers. The amorphization leads to an enhancement of the vibrations in the range of 1100–1250 cm{sup −1}. The mechanical properties of BAM materials are investigated at equilibrium and under shear and tensile strain. The anisotropy of the ideal shear and tensile strengths is explained in terms of a layered structure of the B{sub 12} units. The strength of amorphous BAM materials is lower than that of the crystalline counterparts because of the partial fragmentation of the boron icosahedra in amorphous structures. The strength enhancement found experimentally for amorphous boron-based films is very likely related to an increase in film density, and the presence of oxygen impurities. For crystalline BAM materials, the icosahedra are preserved during elongation upon tension as well as upon shear in the (010)[100] slip system.

Influence of amorphous layers on the thermal conductivity of phononic crystals

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Verdier, Maxime; Lacroix, David; Didenko, Stanislav; Robillard, Jean-François; Lampin, Evelyne; Bah, Thierno-Moussa; Termentzidis, Konstantinos

2018-03-01

The impact of amorphous phases around the holes and at the upper and lower free surfaces on thermal transport in silicon phononic membranes is studied. By means of molecular dynamics and Monte Carlo simulations, we explore the impact of the amorphous phase (oxidation and amorphous silicon), surfaces roughness, and a series of geometric parameters on thermal transport. We show that the crystalline phase drives the phenomena; the two main parameters are (i) the crystalline fraction between two holes and (ii) the crystalline thickness of the membranes. We reveal the hierarchical impact of nanostructurations on the thermal conductivity, namely, from the most resistive to the less resistive: the creation of holes, the amorphous phase around them, and the amorphization of the membranes edges. The surfaces or interfaces perpendicular to the heat flow hinder the thermal conductivity to a much greater extent than those parallel to the heat flow.

Spectroscopic ellipsometry characterization of amorphous and crystalline TiO2 thin films grown by atomic layer deposition at different temperatures

Science.gov (United States)

Saha, D.; Ajimsha, R. S.; Rajiv, K.; Mukherjee, C.; Gupta, M.; Misra, P.; Kukreja, L. M.

2014-10-01

TiO2 thin films of widely different structural and morphological characteristics were grown on Si (1 0 0) substrates using Atomic Layer Deposition (ALD) by varying the substrate temperature (Ts) in a wide range (50 °C ≤ Ts ≤ 400 °C). Spectroscopic ellipsometry (SE) measurements were carried out to investigate the effect of growth temperature on the optical properties of the films. Measured SE data were analyzed by considering double layer optical model for the sample together with the single oscillator Tauc-Lorentz dispersion relation. Surface roughness was taken into consideration due to the columnar growths of grains in crystalline films. The refractive index was found to be increased from amorphous (Ts ≤ 150 °C) to the nanocrystalline films (2500 < Ts ≤ 400 °C). The pronounced surface roughening for the large-grained anatase film obtained at the amorphous to crystalline phase transformation temperature of 200 °C, impeded SE measurement. The dispersions of refractive indices below the interband absorption edge were found to be strongly correlated with the single oscillator Wemple-DiDomenico (WD) model. The increase in dispersion energy parameter in WD model from disordered amorphous to the more ordered nanocrystalline films was found to be associated with the increase in the film density and coordination number.

Fabrication of amorphous IGZO thin film transistor using self-aligned imprint lithography with a sacrificial layer

Science.gov (United States)

Kim, Sung Jin; Kim, Hyung Tae; Choi, Jong Hoon; Chung, Ho Kyoon; Cho, Sung Min

2018-04-01

An amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) was fabricated by a self-aligned imprint lithography (SAIL) method with a sacrificial photoresist layer. The SAIL is a top-down method to fabricate a TFT using a three-dimensional multilayer etch mask having all pattern information for the TFT. The sacrificial layer was applied in the SAIL process for the purpose of removing the resin residues that were inevitably left when the etch mask was thinned by plasma etching. This work demonstrated that the a-IGZO TFT could be fabricated by the SAIL process with the sacrificial layer. Specifically, the simple fabrication process utilized in this study can be utilized for the TFT with a plasma-sensitive semiconductor such as the a-IGZO and further extended for the roll-to-roll TFT fabrication.

Characterization of amorphous yttria layers deposited by aqueous solutions of Y-chelate alkoxides complex

Science.gov (United States)

Kim, Young-Soon; Lee, Yu-Ri; Kim, Byeong-Joo; Lee, Jae-Hun; Moon, Seung-Hyun; Lee, Hunju

2015-01-01

Crack-free amorphous yttria layers were deposited by dip coating in solutions of different Y-chelate alkoxides complex. Three Y-chelate solutions of different concentrations were prepared using yttrium acetate tetrahydrate, yttrium stearic acid as Y source materials. PEG, diethanolamine were used as chelating agents, while ethanol, methanol and tetradecane were used as solvent. Three different combinations of chelating and solvents were used to prepare solutions for Y2O3 dip coating on SUS, electropolished and non-electropolished Hastelloy C-276 substrates. The thickness of the films was varied by changing the number of dipping cycles. At an optimized condition, the substrate surface roughness (rms) value was reduced from ∼50 nm to ∼1 nm over a 10 × 10 μm2 area. After Y2O3 deposition, MgO was deposited using ion-beam assisted deposition (IBAD), then LaMnO3 (LMO) was deposited using sputtering and GdBCO was deposited using reactive co-evaporation by deposition and reaction (RCE-DR). Detailed X-ray study indicates that LMO/MgO/Y2O3 and GdBCO/LMO/MgO/Y2O3 stack films have good out-of-plane and in-plane textures with strong c-axis alignment. The critical current (Ic) of GdBCO/LMO/MgO/Y2O3 multilayer structure varied from 190 to 420 A/cm with different solutions, when measured at 77 K. These results demonstrated that amorphous yttria can be easily deposited by dip coating using Y-chelates complex as a diffusion barrier and nucleation layer.

Studies of pulsed laser melting and rapid solidification using amorphous silicon

International Nuclear Information System (INIS)

Lowndes, D.H.; Wood, R.F.

1984-06-01

Pulsed-laser melting of ion implantation-amorphized silicon layers, and subsequent solidification were studied. Measurements of the onset of melting of amorphous silicon layers and of the duration of melting, and modified melting model calculations demonstrated that the thermal conductivity, K/sub a/, of amorphous silicon is very low (K/sub a/ approx. = 0.02 W/cm-K). K/sub a/ is also the dominant parameter determining the dynamical response of amorphous silicon to pulsed laser radiation. TEM indicates that bulk (volume) nucleation occurs directly from the highly undercooled liquid silicon that can be prepared by pulsed laser melting of amorphous silicon layers at low laser energy densities. A modified thermal melting model is presented. The model calculations demonstrate that the release of latent heat by bulk nucleation occurring during the melt-in process is essential to obtaining agreement with observed depths of melting. These calculations also show that this release of latent heat accompanying bulk nucleation can result in the existence of buried molten layers of silicon in the interior of the sample after the surface has solidified. The bulk nucleation implies that the liquid-to-amorphous phase transition (produced using picosecond or uv nanosecond laser pulses) cannot be explained using purely thermodynamic considerations

Spectroscopic ellipsometry characterization of amorphous and crystalline TiO{sub 2} thin films grown by atomic layer deposition at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Saha, D., E-mail: babaisps@rrcat.gov.in [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Ajimsha, R.S. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Rajiv, K.; Mukherjee, C. [Mechanical and Optical Support Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Gupta, M. [UGC-DAE Consortium, Indore Centre, Khandwa Road, Indore 452017 (India); Misra, P.; Kukreja, L.M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

2014-10-01

Highlights: • Refractive index was found to be increased from amorphous to the nanocrystalline films. • Refractive index was found to be inversely proportional with growth per cycle. • Large-grained anatase films showed lower refractive indices than the amorphous films. • Roughness was taken into consideration due to the columnar growths of crystalline films. - Abstract: TiO{sub 2} thin films of widely different structural and morphological characteristics were grown on Si (1 0 0) substrates using Atomic Layer Deposition (ALD) by varying the substrate temperature (T{sub s}) in a wide range (50 °C ≤ T{sub s} ≤ 400 °C). Spectroscopic ellipsometry (SE) measurements were carried out to investigate the effect of growth temperature on the optical properties of the films. Measured SE data were analyzed by considering double layer optical model for the sample together with the single oscillator Tauc-Lorentz dispersion relation. Surface roughness was taken into consideration due to the columnar growths of grains in crystalline films. The refractive index was found to be increased from amorphous (T{sub s} ≤ 150 °C) to the nanocrystalline films (250{sup 0} < T{sub s} ≤ 400 °C). The pronounced surface roughening for the large-grained anatase film obtained at the amorphous to crystalline phase transformation temperature of 200 °C, impeded SE measurement. The dispersions of refractive indices below the interband absorption edge were found to be strongly correlated with the single oscillator Wemple–DiDomenico (WD) model. The increase in dispersion energy parameter in WD model from disordered amorphous to the more ordered nanocrystalline films was found to be associated with the increase in the film density and coordination number.

X-Ray Amorphous Phases in Antarctica Dry Valley Soils: Insight into Aqueous Alteration Processes on Mars?

Science.gov (United States)

Ming, D. W.; Morris, R. V.; Rampe, E. B.; Golden, D. C.; Quinn, J. E.

2015-01-01

The Chemistry and Mineralogy (CheMin) instrument onboard the Mars Curiosity rover has detected abundant amounts (approx. 25-30 weight percentage) of X-ray amorphous materials in a windblown deposit (Rocknest) and in a sedimentary mudstone (Cumberland and John Klein) in Gale crater, Mars. On Earth, X-ray amorphous components are common in soils and sediments, but usually not as abundant as detected in Gale crater. One hypothesis for the abundant X-ray amorphous materials on Mars is limited interaction of liquid water with surface materials, kinetically inhibiting maturation to more crystalline phases. The objective of this study was to characterize the chemistry and mineralogy of soils formed in the Antarctica Dry Valleys, one of the driest locations on Earth. Two soils were characterized from different elevations, including a low elevation, coastal, subxerous soil in Taylor Valley and a high elevation, ultraxerous soil in University Valley. A variety of techniques were used to characterize materials from each soil horizon, including Rietveld analysis of X-ray diffraction data. For Taylor Valley soil, the X-ray amorphous component ranged from about 4 weight percentage in the upper horizon to as high as 15 weight percentage in the lowest horizon just above the permafrost layer. Transmission electron microscopy indicated that the presence of short-range ordered (SRO) smectite was the most likely candidate for the X-ray amorphous materials in the Taylor Valley soils. The SRO smectite is likely an aqueous alteration product of mica inherited from granitic materials during glaciation of Taylor Valley. The drier University Valley soils had lower X-ray amorphous contents of about 5 weight percentage in the lowest horizon. The X-ray amorphous materials in University Valley are attributed to nanoparticles of TiO2 and possibly amorphous SiO2. The high abundance of X-ray amorphous materials in Taylor Valley is surprising for one of the driest places on Earth. These materials

Generation of amorphous surface layers in LiNbO3 by ion-beam irradiation: thresholding and boundary propagation

International Nuclear Information System (INIS)

Olivares, J.; Garcia, G.; Agullo-Lopez, F.; Agullo-Rueda, F.; Kling, A.; Soares, J.C.

2005-01-01

The refractive-index profiles induced by high-energy (5 MeV, 7.5 MeV) silicon irradiation in LiNbO 3 have been systematically determined as a function of ion fluence in the range 10 13 -10 15 cm -2 . At variance with irradiations at lower energies, an optically isotropic ('amorphous') homogeneous surface layer is generated whose thickness increases with fluence. These results have been associated with an electronic excitation mechanism. They are discussed in relation to the well-documented phenomenon of latent (amorphous) track generation under ion irradiation, requiring a threshold value S e,th for the electronic stopping power S e . Our optical data have yielded a value of ∼5 keV/nm for such a threshold, within the range reported by independent single-track measurements. The propagation of the amorphous boundary into the crystal during irradiation indicates that the threshold value decreases on increasing the fluence. Complementary Rutherford backscattering-channeling and micro-Raman (on samples irradiated at 30 MeV) experiments have been performed to monitor the induced structural changes. (orig.)

Formation of nanocrystalline and amorphous phase of Al-Pb-Si-Sn-Cu powder during mechanical alloying

International Nuclear Information System (INIS)

Ran Guang; Zhou Jingen; Xi Shengqi; Li Pengliang

2006-01-01

Al-15%Pb-4%Si-1%Sn-1.5%Cu alloys (mass fraction, %) were prepared by mechanical alloying (MA). Phase transformation and microstructure characteristics of the alloy powders were investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The results show that the nanocrystalline supersaturated solid solutions and amorphous phase in the powders are obtained during MA. The effect of ball milling is more evident to lead than to aluminum. During MA, the mixture powders are firstly fined, alloyed, nanocrystallized and then the nanocrystalline partly transforms to amorphous phase. A thermodynamic model is developed based on semi-experimental theory of Miedema to calculate the driving force for phase evolution. The thermodynamic analysis shows that there is no chemical driving force to form a crystalline solid solution from the elemental components. But for the amorphous phase, the Gibbs free energy is higher than 0 for the alloy with lead content in the ranges of 0-86.8 at.% and 98.4-100 at.% and lower than 0 in range of 86.8-98.4 at.%. For the Al-2.25 at.%Pb (Al-15%Pb, mass fraction, %), the driving force for formation of amorphization and nanocrystalline supersaturated solid solutions are provided not by the negative heat of mixing but by mechanical work

Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition.

Science.gov (United States)

Ali, Saima; Juntunen, Taneli; Sintonen, Sakari; Ylivaara, Oili M E; Puurunen, Riikka L; Lipsanen, Harri; Tittonen, Ilkka; Hannula, Simo-Pekka

2016-11-04

The thermophysical properties of Al2O3/TiO2 nanolaminates deposited by atomic layer deposition (ALD) are studied as a function of bilayer thickness and relative TiO2 content (0%-100%) while the total nominal thickness of the nanolaminates was kept at 100 nm. Cross-plane thermal conductivity of the nanolaminates is measured at room temperature using the nanosecond transient thermoreflectance method. Based on the measurements, the nanolaminates have reduced thermal conductivity as compared to the pure amorphous thin films, suggesting that interfaces have a non-negligible effect on thermal transport in amorphous nanolaminates. For a fixed number of interfaces, we find that approximately equal material content of Al2O3 and TiO2 produces the lowest value of thermal conductivity. The thermal conductivity reduces with increasing interface density up to 0.4 nm(-1), above which the thermal conductivity is found to be constant. The value of thermal interface resistance approximated by the use of diffuse mismatch model was found to be 0.45 m(2) K GW(-1), and a comparative study employing this value supports the interpretation of non-negligible interface resistance affecting the overall thermal conductivity also in the amorphous limit. Finally, no clear trend in thermal conductivity values was found for nanolaminates grown at different deposition temperatures, suggesting that the temperature in the ALD process has a non-trivial while modest effect on the overall thermal conductivity in amorphous nanolaminates.

The Relationship between Nanocluster Precipitation and Thermal Conductivity in Si/Ge Amorphous Multilayer Films: Effects of Cu Addition

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Ahmad Ehsan Mohd Tamidi

2016-01-01

Full Text Available We have used a molecular dynamics technique to simulate the relationship between nanocluster precipitation and thermal conductivity in Si/Ge amorphous multilayer films, with and without Cu addition. In the study, the Green-Kubo equation was used to calculate thermal conductivity in these materials. Five specimens were prepared: Si/Ge layers, Si/(Ge + Cu layers, (Si + Cu/(Ge + Cu layers, Si/Cu/Ge/Cu layers, and Si/Cu/Ge layers. The number of precipitated nanoclusters in these specimens, which is defined as the number of four-coordinate atoms, was counted along the lateral direction of the specimens. The observed results of precipitate formation were considered in relation to the thermal conductivity results. Enhancement of precipitation of nanoclusters by Cu addition, that is, densification of four-coordinate atoms, can prevent the increment of thermal conductivity. Cu dopant increases the thermal conductivity of these materials. Combining these two points, we concluded that Si/Cu/Ge is the best structure to improve the conversion efficiency of the Si/Ge amorphous multilayer films.

The application of thick hydrogenated amorphous silicon layers to charged particle and x-ray detection

International Nuclear Information System (INIS)

Perez-Mendez, V.; Cho, G.; Fujieda, I.; Kaplan, S.N.; Qureshi, S.; Street, R.A.

1989-04-01

We outline the characteristics of thick hydrogenated amorphous silicon layers which are optimized for the detection of charged particles, x-rays and γ-rays. Signal amplitude as a function of the linear energy transfer of various particles are given. Noise sources generated by the detector material and by the thin film electronics - a-Si:H or polysilicon proposed for pixel position sensitive detectors readout are described, and their relative amplitudes are calculated. Temperature and neutron radiation effects on leakage currents and the corresponding noise changes are presented. 17 refs., 12 figs., 2 tabs

Ion-induced damage and amorphization in Si

International Nuclear Information System (INIS)

Holland, O.W.; White, C.W.

1990-01-01

Ion-induced damage growth in high-energy, self-ion irradiated Si was studied using electron microscopy and Rutherford backscattering spectroscopy. The results show that there is a marked variation in the rate of damage growth, as well as the damage morphology, along the path of the ion. Near the ion end-of-range (eor), damage increases monotonically with ion fluence until a buried amorphous layer is formed, while damage growth saturates at a low level in the region ahead. The morphology of the damage in the saturated region is shown to consist predominantly of simple defect clusters such as the divacancy. Damage growth remains saturated ahead of the eor until expansion of the buried amorphous layer encroaches into the region. A homogeneous growth model is presented which accounts for damage saturation, and accurately predicts the dose-rate dependence of the saturation level. Modifications of the model are discussed which are needed to account for the rapid growth in the eor region and near the interface of the buried amorphous layer. Two important factors contributing to rapid damage growth are identified. Spatial separation of the Frenkel defect pairs (i.e. interstitials and vacancies) due to the momentum of the interstitials is shown to greatly impact damage growth near the eor, while uniaxial strain in the interfacial region of the amorphous layer is identified as an important factor contributing to growth at that location. 20 refs., 10 figs

Heavy ions amorphous semiconductors irradiation study

International Nuclear Information System (INIS)

Benmalek, M.

1978-01-01

The behavior of amorphous semiconductors (germanium and germanium and arsenic tellurides) under ion bombardment at energies up to 2 MeV was studied. The irradiation induced modifications were followed using electrical parameter changes (resistivity and activation energy) and by means of the transmission electron microscopy observations. The electrical conductivity enhancement of the irradiated samples was interpreted using the late conduction theories in amorphous compounds. In amorphous germanium, Electron Microscopy showed the formations of 'globules', these defects are similar to voids observed in irradiated metals. The displacement cascade theory was used for the interpretation of the irradiation induced defects formation and a coalescence mechanism of growth was pointed out for the vacancy agglomeration [fr

In situ observation of shear-driven amorphization in silicon crystals

Energy Technology Data Exchange (ETDEWEB)

He, Yang; Zhong, Li; Fan, Feifei; Wang, Chongmin; Zhu, Ting; Mao, Scott X.

2016-09-19

Amorphous materials have attracted great interest in the scientific and technological fields. An amorphous solid usually forms under the externally driven conditions of melt-quenching, irradiation and severe mechanical deformation. However, its dynamic formation process remains elusive. Here we report the in situ atomic-scale observation of dynamic amorphization processes during mechanical straining of nanoscale silicon crystals by high resolution transmission electron microscopy (HRTEM). We observe the shear-driven amorphization (SDA) occurring in a dominant shear band. The SDA involves a sequence of processes starting with the shear-induced diamond-cubic to diamond-hexagonal phase transition that is followed by dislocation nucleation and accumulation in the newly formed phase, leading to the formation of amorphous silicon. The SDA formation through diamond-hexagonal phase is rationalized by its structural conformity with the order in the paracrystalline amorphous silicon, which maybe widely applied to diamond-cubic materials. Besides, the activation of SDA is orientation-dependent through the competition between full dislocation nucleation and partial gliding.

SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

Science.gov (United States)

2012-01-01

In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement. PMID:22221730

Amorphous Calcium Phosphate Formation and Aggregation Process Revealed by Light Scattering Techniques

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Vida Čadež

2018-06-01

Full Text Available Amorphous calcium phosphate (ACP attracts attention as a precursor of crystalline calcium phosphates (CaPs formation in vitro and in vivo as well as due to its excellent biological properties. Its formation can be considered to be an aggregation process. Although aggregation of ACP is of interest for both gaining a fundamental understanding of biominerals formation and in the synthesis of novel materials, it has still not been investigated in detail. In this work, the ACP aggregation was followed by two widely applied techniques suitable for following nanoparticles aggregation in general: dynamic light scattering (DLS and laser diffraction (LD. In addition, the ACP formation was followed by potentiometric measurements and formed precipitates were characterized by Fourier transform infrared spectroscopy (FTIR, powder X-ray diffraction (PXRD, transmission electron microscopy (TEM, and atomic force microscopy (AFM. The results showed that aggregation of ACP particles is a process which from the earliest stages simultaneously takes place at wide length scales, from nanometers to micrometers, leading to a highly polydisperse precipitation system, with polydispersity and vol. % of larger aggregates increasing with concentration. Obtained results provide insight into developing a way of regulating ACP and consequently CaP formation by controlling aggregation on the scale of interest.

Influence of source and drain contacts on the properties of indium-gallium-zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer.

Science.gov (United States)

Luo, Dongxiang; Xu, Hua; Zhao, Mingjie; Li, Min; Xu, Miao; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

2015-02-18

Amorphous indium-gallium-zinc-oxide thin film transistors (α-IGZO TFTs) with damage-free back channel wet-etch (BCE) process were achieved by introducing a carbon nanofilm as a barrier layer. We investigate the effects of different source-and-drain (S/D) materials on TFT performance. We find the TFT with Ti/C S/D electrodes exhibits a superior performance with higher output current, lower threshold voltage, and higher effective electron mobility compared to that of Mo/C S/D electrodes. Transmittance electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) are employed to analysis the interfacial interaction between S/D metal/C/α-IGZO layers. The results indicate that the better performance of TFTs with Ti/C electrodes should be attributed to the formations of Ti-C and Ti-O at the Ti/C-contact regions, which lead to a lower contact resistance, whereas Mo film is relatively stable and does not react easily with C nanofilm, resulting in a nonohmic contact behavior between Mo/C and α-IGZO layer. However, both kinds of α-IGZO TFTs show good stability under thermal bias stress, indicating that the inserted C nanofilms could avoid the impact on the α-IGZO channel regions during S/D electrodes formation. Finally, we successfully fabricated a high-definition active-matrix organic lighting emitting diode prototype driven by α-IGZO TFTs with Ti/C electrodes in a pilot line.

Effect of etching stop layer on characteristics of amorphous IGZO thin film transistor fabricated at low temperature

Directory of Open Access Journals (Sweden)

Xifeng Li

2013-03-01

Full Text Available Transparent bottom-gate amorphous Indium-Gallium-Zinc Oxide (a-IGZO thin-film transistors (TFTs had been successfully fabricated at relative low temperature. The influence of reaction gas ratio of N2O and SiH4 during the growth of etching stop layer (SiOx on the characteristics of a-IGZO TFTs was investigated. The transfer characteristics of the TFTs were changed markedly because active layer of a-IGZO films was modified by plasma in the growth process of SiOx. By optimizing the deposition parameters of etching stop layer process, a-IGZO TFTs were manufactured and exhibited good performance with a field-effect mobility of 8.5 cm2V-1s-1, a threshold voltage of 1.3 V, and good stability under gate bias stress of 20 V for 10000 s.

Amorphous TiO2 Shells: A Vital Elastic Buffering Layer on Silicon Nanoparticles for High-Performance and Safe Lithium Storage.

Science.gov (United States)

Yang, Jianping; Wang, Yunxiao; Li, Wei; Wang, Lianjun; Fan, Yuchi; Jiang, Wan; Luo, Wei; Wang, Yang; Kong, Biao; Selomulya, Cordelia; Liu, Hua Kun; Dou, Shi Xue; Zhao, Dongyuan

2017-12-01

Smart surface coatings of silicon (Si) nanoparticles are shown to be good examples for dramatically improving the cyclability of lithium-ion batteries. Most coating materials, however, face significant challenges, including a low initial Coulombic efficiency, tedious processing, and safety assessment. In this study, a facile sol-gel strategy is demonstrated to synthesize commercial Si nanoparticles encapsulated by amorphous titanium oxide (TiO 2 ), with core-shell structures, which show greatly superior electrochemical performance and high-safety lithium storage. The amorphous TiO 2 shell (≈3 nm) shows elastic behavior during lithium discharging and charging processes, maintaining high structural integrity. Interestingly, it is found that the amorphous TiO 2 shells offer superior buffering properties compared to crystalline TiO 2 layers for unprecedented cycling stability. Moreover, accelerating rate calorimetry testing reveals that the TiO 2 -encapsulated Si nanoparticles are safer than conventional carbon-coated Si-based anodes. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

RF power dependent formation of amorphous MoO3-x nanorods by RF magnetron sputtering

International Nuclear Information System (INIS)

Navas, I.; Vinodkumar, R.; Detty, A.P.; Mahadevan Pillai, V.P.

2009-01-01

Full text: The fabrication of nanorods has received increasing attention for their unique physical and chemical properties and a wide range of potential applications such as photonics and nanoelectronics Molybdenum oxide nanorods with high activity can be used in a wide variety of applications such as cathodes in rechargeable batteries, field emission devices, solid lubricants, superconductors thermoelectric materials, and electrochromic devices. In this paper, amorphous MoO 3-x nanorods can find excellent applications in electrochromic and gas sensing have been successfully prepared by varying the R F power in R F Magnetron Sputtering system without heating the substrate; other parameters which are optimised in our earlier studies. We have found that the optimum RF power for nanorod formation is 200W. At a moderate RF power (200W), sputtering redeposition takes places constructively which leads to formation of fine nanorods. Large RF power creates high energetic ion bombardment on the grains surfaces which can lead to re-nucleation, so the grains become smaller and columnar growth is interrupted. Beyond the RF power 200W, the etching effect of the plasma became more severe and damaged the surface of the nanorods. All the molybdenum oxide films prepared are amorphous; the XRD patterns exhibit no characteristic peak corresponds to MoO 3 . The amorphous nature is preferred for good electrochromic colouration The spectroscopic properties of the nanorods have been investigated systematically using atomic force microscopy, x-ray diffraction, micro-Raman, UV-visible and photoluminescence (PL) spectroscopy. The films exhibit two emission bands; a near band edge UV emission and a defect related deep level visible emission

Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells.

Science.gov (United States)

Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J; Chang, Robert P H; Facchetti, Antonio; Marks, Tobin J

2015-06-30

In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor-inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.

Hydrogen in disordered and amorphous solids

International Nuclear Information System (INIS)

Bambakidis, G; Bowman, R.C.

1986-01-01

This book presents information on the following topoics: elements of the theory of amorphous semiconductors; electronic structure of alpha-SiH; fluctuation induced gap states in amorphous hydrogenated silicon; hydrogen on semiconductor surfaces; the influence of hydrogen on the defects and instabilities in hydrogenated amorphous silicon; deuteron magnetic resonance in some amorphous semiconductors; formation of amorphous metals by solid state reactions of hydrogen with an intermetallic compound; NMR studies of the hydrides of disordered and amorphous alloys; neutron vibrational spectroscopy of disordered metal-hydrogen system; dynamical disorder of hydrogen in LaNi /SUB 5-y/ M /SUB y/ hydrides studied by quasi-elastic neutron scattering; recent studies of intermetallic hydrides; tritium in Pd and Pd /SUB 0.80/ Sg /SUB 0.20/ ; and determination of hydrogen concentration in thin films of absorbing materials

Mesoderm layer formation in Xenopus and Drosophila gastrulation

International Nuclear Information System (INIS)

Winklbauer, Rudolf; Müller, H-Arno J

2011-01-01

During gastrulation, the mesoderm spreads out between ectoderm and endoderm to form a mesenchymal cell layer. Surprisingly the underlying principles of mesoderm layer formation are very similar in evolutionarily distant species like the fruit fly, Drosophila melanogaster, and the frog, Xenopus laevis, in which the molecular and the cellular basis of mesoderm layer formation have been extensively studied. Complementary expression of growth factors in the ectoderm and their receptors in the mesoderm act to orient cellular protrusive activities and direct cell movement, leading to radial cell intercalation and the spreading of the mesoderm layer. This mechanism is contrasted with generic physical mechanisms of tissue spreading that consider the adhesive and physical properties of the cells and tissues. Both mechanisms need to be integrated to orchestrate mesenchymal morphogenesis

Photoemission studies of amorphous silicon induced by P + ion implantation

Science.gov (United States)

Petö, G.; Kanski, J.

1995-12-01

An amorphous Si layer was formed on a Si (1 0 0) surface by P + implantation at 80 keV. This layer was investigated by means of photoelectron spectroscopy. The resulting spectra are different from earlier spectra on amorphous Si prepared by e-gun evaporation or cathode sputtering. The differences consist of a decreased intensity in the spectral region corresponding to p-states, and appearace of new states at higher binding energy. Qualitativity similar results have been reported for Sb implanted amorphous Ge and the modification seems to be due to the changed short range order.

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors.

Science.gov (United States)

Ning, Honglong; Chen, Jianqiu; Fang, Zhiqiang; Tao, Ruiqiang; Cai, Wei; Yao, Rihui; Hu, Shiben; Zhu, Zhennan; Zhou, Yicong; Yang, Caigui; Peng, Junbiao

2017-01-10

Printing technologies for thin-film transistors (TFTs) have recently attracted much interest owing to their eco-friendliness, direct patterning, low cost, and roll-to-roll manufacturing processes. Lower production costs could result if electrodes fabricated by vacuum processes could be replaced by inkjet printing. However, poor interfacial contacts and/or serious diffusion between the active layer and the silver electrodes are still problematic for achieving amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs with good electrical performance. In this paper, silver (Ag) source/drain electrodes were directly inkjet-printed on an amorphous a-IGZO layer to fabricate TFTs that exhibited a mobility of 0.29 cm²·V -1 ·s -1 and an on/off current ratio of over 10⁵. To the best of our knowledge, this is a major improvement for bottom-gate top-contact a-IGZO TFTs with directly printed silver electrodes on a substrate with no pretreatment. This study presents a promising alternative method of fabricating electrodes of a-IGZO TFTs with desirable device performance.

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors

Directory of Open Access Journals (Sweden)

Honglong Ning

2017-01-01

Full Text Available Printing technologies for thin-film transistors (TFTs have recently attracted much interest owing to their eco-friendliness, direct patterning, low cost, and roll-to-roll manufacturing processes. Lower production costs could result if electrodes fabricated by vacuum processes could be replaced by inkjet printing. However, poor interfacial contacts and/or serious diffusion between the active layer and the silver electrodes are still problematic for achieving amorphous indium–gallium–zinc–oxide (a-IGZO TFTs with good electrical performance. In this paper, silver (Ag source/drain electrodes were directly inkjet-printed on an amorphous a-IGZO layer to fabricate TFTs that exhibited a mobility of 0.29 cm2·V−1·s−1 and an on/off current ratio of over 105. To the best of our knowledge, this is a major improvement for bottom-gate top-contact a-IGZO TFTs with directly printed silver electrodes on a substrate with no pretreatment. This study presents a promising alternative method of fabricating electrodes of a-IGZO TFTs with desirable device performance.

Rapid formation of nanocrystalline HfO2 powders from amorphous hafnium hydroxide under ultrasonically assisted hydrothermal treatment

International Nuclear Information System (INIS)

Meskin, Pavel E.; Sharikov, Felix Yu.; Ivanov, Vladimir K.; Churagulov, Bulat R.; Tretyakov, Yury D.

2007-01-01

Peculiarities of hafnium hydroxide hydrothermal decomposition were studied by in situ heat flux calorimetry for the first time. It was shown that this process occurs in one exothermal stage (ΔH = -17.95 kJ mol -1 ) at 180-250 deg. C resulting in complete crystallization of amorphous phase with formation of pure monoclinic HfO 2 . It was found that the rate of m-HfO 2 formation can be significantly increased by combining hydrothermal treatment with simultaneous ultrasonic activation

XPS and STEM study of the interface formation between ultra-thin Ru and Ir OER catalyst layers and perylene red support whiskers

Directory of Open Access Journals (Sweden)

Atanasoska Ljiljana L.

2013-01-01

Full Text Available The interface formation between nano-structured perylene red (PR whiskers and oxygen evolution reaction (OER catalysts ruthenium and iridium has been studied systematically by XPS and STEM. The OER catalyst over-layers with thicknesses ranging from ~0.1 to ~50 nm were vapor deposited onto PR ex-situ. STEM images demonstrate that, with increasing thickness, Ru and Ir transform from amorphous clusters to crystalline nanoparticles, which agglomerate with increased over-layer thickness. XPS data show a strong interaction between Ru and PR. Ir also interacts with PR although not to the extent seen for Ru. At low coverages, the entire Ru deposit is in the reacted state while a small portion of the deposited Ir remains metallic. Ru and Ir bonding occur at the PR carbonyl sites as evidenced by the attenuation of carbonyl photoemission and the emergence of new peak assigned to C-O single bond. The curve fitting analysis and the derived stoichiometry indicates the formation of metallo-organic bonds. The co-existence of oxide bonds is also apparent.

Ion implantation into amorphous Si layers to form carrier-selective contacts for Si solar cells

International Nuclear Information System (INIS)

Feldmann, Frank; Mueller, Ralph; Reichel, Christian; Hermle, Martin

2014-01-01

This paper reports our findings on the boron and phosphorus doping of very thin amorphous silicon layers by low energy ion implantation. These doped layers are implemented into a so-called tunnel oxide passivated contact structure for Si solar cells. They act as carrier-selective contacts and, thereby, lead to a significant reduction of the cell's recombination current. In this paper we address the influence of ion energy and ion dose in conjunction with the obligatory high-temperature anneal needed for the realization of the passivation quality of the carrier-selective contacts. The good results on the phosphorus-doped (implied V oc = 725 mV) and boron-doped passivated contacts (iV oc = 694 mV) open a promising route to a simplified interdigitated back contact (IBC) solar cell featuring passivated contacts. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Vortex Formation During Unsteady Boundary-Layer Separation

Science.gov (United States)

Das, Debopam; Arakeri, Jaywant H.

1998-11-01

Unsteady laminar boundary-layer separation is invariably accompanied by the formation of vortices. The aim of the present work is to study the vortex formation mechanism(s). An adverse pressure gradient causing a separation can be decomposed into a spatial component ( spatial variation of the velocity external to the boundary layer ) and a temporal component ( temporal variation of the external velocity ). Experiments were conducted in a piston driven 2-D water channel, where the spatial component could be be contolled by geometry and the temporal component by the piston motion. We present results for three divergent channel geometries. The piston motion consists of three phases: constant acceleration from start, contant velocity, and constant deceleration to stop. Depending on the geometry and piston motion we observe different types of unsteady separation and vortex formation.

Amorphous nanoparticles — Experiments and computer simulations

International Nuclear Information System (INIS)

Hoang, Vo Van; Ganguli, Dibyendu

2012-01-01

The data obtained by both experiments and computer simulations concerning the amorphous nanoparticles for decades including methods of synthesis, characterization, structural properties, atomic mechanism of a glass formation in nanoparticles, crystallization of the amorphous nanoparticles, physico-chemical properties (i.e. catalytic, optical, thermodynamic, magnetic, bioactivity and other properties) and various applications in science and technology have been reviewed. Amorphous nanoparticles coated with different surfactants are also reviewed as an extension in this direction. Much attention is paid to the pressure-induced polyamorphism of the amorphous nanoparticles or amorphization of the nanocrystalline counterparts. We also introduce here nanocomposites and nanofluids containing amorphous nanoparticles. Overall, amorphous nanoparticles exhibit a disordered structure different from that of corresponding bulks or from that of the nanocrystalline counterparts. Therefore, amorphous nanoparticles can have unique physico-chemical properties differed from those of the crystalline counterparts leading to their potential applications in science and technology.

Recent advances in co-amorphous drug formulations

DEFF Research Database (Denmark)

Dengale, Swapnil Jayant; Grohganz, Holger; Rades, Thomas

2016-01-01

with other amorphous stabilization techniques. Because of this, several research groups started to investigate the co-amorphous formulation approach, resulting in an increasing amount of scientific publications over the last few years. This study provides an overview of the co-amorphous field and its recent......Co-amorphous drug delivery systems have recently gained considerable interest in the pharmaceutical field because of their potential to improve oral bioavailability of poorly water-soluble drugs through drug dissolution enhancement as a result of the amorphous nature of the material. A co...... findings. In particular, we investigate co-amorphous formulations from the viewpoint of solid dispersions, describe their formation and mechanism of stabilization, study their impact on dissolution and in vivo performance and briefly outline the future potentials....

Structural, optical and compositional stability of MoS2 multi-layer flakes under high dose electron beam irradiation

Science.gov (United States)

Rotunno, E.; Fabbri, F.; Cinquanta, E.; Kaplan, D.; Longo, M.; Lazzarini, L.; Molle, A.; Swaminathan, V.; Salviati, G.

2016-06-01

MoS2 multi-layer flakes, exfoliated from geological molybdenite, have been exposed to high dose electron irradiation showing clear evidence of crystal lattice and stoichiometry modifications. A massive surface sulfur depletion is induced together with the consequent formation of molybdenum nanoislands. It is found that a nanometric amorphous carbon layer, unwillingly deposited during the transmission electron microscope experiments, prevents the formation of the nanoislands. In the absence of the carbon layer, the formation of molybdenum grains proceeds both on the top and bottom surfaces of the flake. If carbon is present on both the surfaces then the formation of Mo grains is completely prevented.

Amorphization of ceramics by ion beams

International Nuclear Information System (INIS)

McHargue, C.J.; Farlow, G.C.; White, C.W.; Williams, J.M.; Appleton, B.R.; Naramoto, H.

1984-01-01

The influence of the implantation parameters fluence, substrate temperature, and chemical species on the formation of amorphous phases in Al 2 O 3 and α-SiC was studied. At 300 0 K, fluences in excess of 10 17 ions.cm -2 were generally required to amorphize Al 2 O 3 ; however, implantation of zirconium formed the amorphous phase at a fluence of 4 x 10 16 Zr.cm -2 . At 77 0 K, the threshold fluence was lowered to about 2 x 10 15 Cr.cm -2 . Single crystals of α-SiC were amorphized at 300 0 K by a fluence of 2 x 10 14 Cr.cm -2 or 1 x 10 15 N.cm -2 . Implantation at 1023 0 K did not produce the amorphous phase in SiC. The micro-indentation hardness of the amorphous material was about 60% of that of the crystalline counterpart

Noise and degradation of amorphous silicon devices

NARCIS (Netherlands)

Bakker, J.P.R.

2003-01-01

Electrical noise measurements are reported on two devices of the disordered semiconductor hydrogenated amorphous silicon (a-Si:H). The material is applied in sandwich structures and in thin-film transistors (TFTs). In a sandwich configuration of an intrinsic layer and two thin doped layers, the

Surface profile gradient in amorphous Ta{sub 2}O{sub 5} semi conductive layers regulates nanoscale electric current stability

Energy Technology Data Exchange (ETDEWEB)

Cefalas, A.C., E-mail: ccefalas@eie.gr [National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 48 Vassileos Constantinou Avenue, Athens 11635 (Greece); Kollia, Z.; Spyropoulos-Antonakakis, N.; Gavriil, V. [National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 48 Vassileos Constantinou Avenue, Athens 11635 (Greece); Christofilos, D.; Kourouklis, G. [Physics Division, School of Technology, Aristotle University of Thessaloniki, Thessaloniki 54124 (Greece); Semashko, V.V.; Pavlov, V. [Kazan Federal University, Institute of Physics, 18 Kremljovskaja str., Kazan 420008 (Russian Federation); Sarantopoulou, E. [National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 48 Vassileos Constantinou Avenue, Athens 11635 (Greece); Kazan Federal University, Institute of Physics, 18 Kremljovskaja str., Kazan 420008 (Russian Federation)

2017-02-28

Highlights: • The work links the surface morphology of amorphous semiconductors with both their electric-thermal properties and current stability at the nanoscale (<1 μm). • Measured high correlation value between surface morphological spatial gradient and conductive electron energy spatial gradient or thermal gradient. • Unidirectional current stability is associated with asymmetric nanodomains along nanosize conductive paths. • Bidirectional current stability is inherent with either long conductive paths or nanosize conductive paths along symmetric nanodomains. • Conclusion: Surface design improves current stability across nanoelectonic junctions. - Abstract: A link between the morphological characteristics and the electric properties of amorphous layers is established by means of atomic, conductive, electrostatic force and thermal scanning microscopy. Using amorphous Ta{sub 2}O{sub 5} (a-Ta{sub 2}O{sub 5}) semiconductive layer, it is found that surface profile gradients (morphological gradient), are highly correlated to both the electron energy gradient of trapped electrons in interactive Coulombic sites and the thermal gradient along conductive paths and thus thermal and electric properties are correlated with surface morphology at the nanoscale. Furthermore, morphological and electron energy gradients along opposite conductive paths of electrons intrinsically impose a current stability anisotropy. For either long conductive paths (L > 1 μm) or along symmetric nanodomains, current stability for both positive and negative currents i is demonstrated. On the contrary, for short conductive paths along non-symmetric nanodomains, the set of independent variables (L, i) is spanned by two current stability/intability loci. One locus specifies a stable state for negative currents, while the other locus also describes a stable state for positive currents.

Uniaxial in-plane magnetization of iron nanolayers grown within an amorphous matrix

Energy Technology Data Exchange (ETDEWEB)

Ghafari, M., E-mail: mohammad.ghafari@kit.edu; Hahn, H. [Herbert Gleiter Institute of Nanoscience, Nanjing University of Science and Technology, Nanjing 210094 (China); Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Mattheis, R. [Leibniz Institute for Photonic Technology IPHT, Jena (Germany); McCord, J. [Institute for Materials Science, Kiel University Kiel, Kaiserstraße 2, 24143 Kiel (Germany); Brand, R. A. [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Macedo, W. A. A. [Laboratório de Física Aplicada, Centro de Desenvolvimento da Tecnologia Nuclear (CDTN), 31270-901 Belo Horizonte, MG (Brazil)

2014-08-18

Conversion electron Mössbauer spectroscopy is used to determine the magnetic ground state at zero magnetic field of four-monolayer thick amorphous iron layers as part of a CoFeB-Fe multilayer stack. By comparing the intensities of the magnetic hyperfine field, an easy in-plane axis of the amorphous embedded Fe layer is verified, which is collinear to the uniaxial anisotropy axis of the neighboring amorphous CoFeB. Despite the soft magnetic character of the Fe layers, external fields up to 4 T perpendicular to the film plane are insufficient to completely align the embedded Fe moments parallel to the magnetic field due to a local disorder of the magnetic moments of the Fe atoms.

Accelerating action of stresses on crystallization kinetics in silicon ion-implanted layers during pulsed heating

International Nuclear Information System (INIS)

Aleksandrov, L.N.

1985-01-01

Numerical simulation of the effect of stressed in ion-implanted layers on kinetics of amorphous phase transformations is performed. The suggested model of accounting stresses including concentration ones is based on the locality of action of interstitial addition atoms and on general structural inhomogeneity of amorphous semiconductor leading to the formation of areas of the facilitated phase transition. Accounting of effect of energy variation of silicon atoms interaction on probability of displacement events and atoms building in lattice points or atomic bonds disintegration allows one to trace the accelerating action of introduced by ion implantation stresses on the kinetics of layer crystallization during pulsed heating

Corrosion resistance and biocompatibility of titanium surface coated with amorphous tantalum pentoxide

Energy Technology Data Exchange (ETDEWEB)

Sun, Ying-Sui [Department of Oral Biology, National Yang-Ming University, Taipei, Taiwan (China); Chang, Jean-Heng [Dental Department, Cheng Hsin General Hospital, Taipei, Taiwan (China); Huang, Her-Hsiung, E-mail: hhhuang@ym.edu.tw [Department of Dentistry, National Yang-Ming University, Taipei, Taiwan (China); Department of Dentistry, Taipei City Hospital, Taipei, Taiwan (China); Department of Stomatology, Taipei Veterans General Hospital, Taipei, Taiwan (China)

2013-01-01

Tantalum pentoxide (Ta{sub 2}O{sub 5}) possesses good corrosion resistance and biocompatibility. This study aimed to improve the corrosion resistance and biocompatibility of titanium (Ti) by coating it with an amorphous Ta{sub 2}O{sub 5} surface layer. An amorphous Ta{sub 2}O{sub 5} layer was prepared on the Ti surface using a simple hydrolysis–condensation process at room temperature. The surface characteristics of the test specimens were analyzed using X-ray photoelectron spectroscopy, glancing angle X-ray diffraction, field emission scanning electron microscopy, and contact angle measurements. The corrosion resistance of the test specimens was evaluated from the potentiodynamic polarization curves and ion release measurements in simulated blood plasma (SBP). The biocompatibility of the test specimens was evaluated in terms of the protein (albumin) adsorption, cell adhesion, and cell growth of human bone marrow mesenchymal stem cells (hBMSCs). The amorphous Ta{sub 2}O{sub 5} layer with a porous micro-/nano-scale topography, which was deposited on the Ti surface using a simple hydrolysis–condensation process, increased the corrosion resistance (i.e., increased the corrosion potential and decreased the anodic current and ion release) of the Ti in the SBP and improved the surface wettability, albumin adsorption, and cell adhesion. We conclude that the presence of an amorphous Ta{sub 2}O{sub 5} layer on the Ti surface increased the corrosion resistance and biocompatibility of Ti. - Highlights: ► Amorphous Ta{sub 2}O{sub 5} layer was coated on Ti using simple hydrolysis–condensation process. ► Ta{sub 2}O{sub 5} surface layer showed a micro-/nano-scale porous topography. ► Ta{sub 2}O{sub 5} layer enhanced wettability and corrosion resistance of Ti. ► Ta{sub 2}O{sub 5} layer enhanced protein adsorption, cell adhesion, and cell proliferation of Ti.

SF{sub 6} decomposition and layer formation due to excimer laser photoablation of SiO{sub 2} surface at gas-solid system

Energy Technology Data Exchange (ETDEWEB)

Sajad, Batool [Physics Department, Amirkabir University, PO Box 15875-4413, Tehran (Iran, Islamic Republic of); Parvin, Parviz [Physics Department, Amirkabir University, PO Box 15875-4413, Tehran (Iran, Islamic Republic of); Bassam, Mohamad Amin [Excimer Laser Lab, Emam Hussain University, PO Box 16575-4347, Tehrann (Iran, Islamic Republic of)

2004-12-21

In this work, the effect of an excimer laser has been studied for presenting a method for SF{sub 6} decomposition and simultaneous formation of a SiF{sub 2} layer on amorphous SiO{sub 2}. Though the excimer laser did not establish a gas phase photodissociation, we have shown that UV photoablation leads strongly to molecular decomposition in the SF{sub 6}-SiO{sub 2} system. Moreover, the dependence of the decomposition process on the exposure parameters such as the wavelength and intensity as well as the gas pressure and the focal point distance from the gas-solid interface has been investigated.

The Structure of Liquid and Amorphous Hafnia

Directory of Open Access Journals (Sweden)

Leighanne C. Gallington

2017-11-01

Full Text Available Understanding the atomic structure of amorphous solids is important in predicting and tuning their macroscopic behavior. Here, we use a combination of high-energy X-ray diffraction, neutron diffraction, and molecular dynamics simulations to benchmark the atomic interactions in the high temperature stable liquid and low-density amorphous solid states of hafnia. The diffraction results reveal an average Hf–O coordination number of ~7 exists in both the liquid and amorphous nanoparticle forms studied. The measured pair distribution functions are compared to those generated from several simulation models in the literature. We have also performed ab initio and classical molecular dynamics simulations that show density has a strong effect on the polyhedral connectivity. The liquid shows a broad distribution of Hf–Hf interactions, while the formation of low-density amorphous nanoclusters can reproduce the sharp split peak in the Hf–Hf partial pair distribution function observed in experiment. The agglomeration of amorphous nanoparticles condensed from the gas phase is associated with the formation of both edge-sharing and corner-sharing HfO6,7 polyhedra resembling that observed in the monoclinic phase.

Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

International Nuclear Information System (INIS)

Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

2014-01-01

We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection

Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon

International Nuclear Information System (INIS)

Artamanov, V.V.; Valakh, M.Ya.; Klyui, N.I.; Mel'nik, V.P.; Romanyuk, A.B.; Romanyuk, B.N.; Yukhimchuk, V.A.

1998-01-01

The properties of silicon structures with silicon carbide (SiC) buried layers produced by high-dose carbon implantation followed by a high-temperature anneal are investigated by Raman and infrared spectroscopy. The influence of the coimplantation of oxygen on the features of SiC buried layer formation is also studied. It is shown that in identical implantation and post-implantation annealing regimes a SiC buried layer forms more efficiently in CZ Si wafers or in Si (CZ or FZ) subjected to the coimplantation of oxygen. Thus, oxygen promotes SiC layer formation as a result of the formation of SiO x precipitates and accommodation of the volume change in the region where the SiC phase forms. Carbon segregation and the formation of an amorphous carbon film on the SiC grain boundaries are also discovered

Radiation-induced formation of cavities in amorphous germanium

International Nuclear Information System (INIS)

Wang, L.M.; Birtcher, R.C.

1989-01-01

Prethinned polycrystalline Ge TEM samples were irradiated with 1.5 MeV Kr + ions at room temperature while structural and morphological changes were observed in situ in the Argonne High Voltage Electron Microscope-Tandem Facility. After a Kr + dose of 1.2x10 14 ions/cm 2 , the irradiated Ge was completely amorphized. A high density of small void-like cavities was observed after a Kr + dose of 7x10 14 ions/cm 2 . With increasing Kr + ion dose, these cavities grew into large holes transforming the irradiated Ge into a sponge-like porous material after 8.5x10 15 ions/cm 2 . The radiation-induced nucleation of void-like cavities in amorphous material is astonishing, and the final structure of the irradiated Ge with enormous surface area may have potential applications

Micro/nanostructures formation by femtosecond laser surface processing on amorphous and polycrystalline Ni{sub 60}Nb{sub 40}

Energy Technology Data Exchange (ETDEWEB)

Peng, Edwin, E-mail: edwin.peng@huskers.unl.edu [Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588 (United States); Tsubaki, Alfred; Zuhlke, Craig A. [Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588 (United States); Wang, Meiyu [Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588 (United States); Bell, Ryan [Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588 (United States); Lucis, Michael J. [Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588 (United States); Anderson, Troy P.; Alexander, Dennis R. [Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588 (United States); Gogos, George; Shield, Jeffrey E. [Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588 (United States)

2017-02-28

Highlights: • Femtosecond laser processing of glass-forming Ni{sub 60}Nb{sub 40} produce surface structures. • Cross sectioning, imaging, & TEM sample preparation with dual-beam SEM. • Low laser fluence surface structures’ form by ablation. • High laserfluence surface structures form by ablation and fluid flow. - Abstract: Femtosecond laser surface processing is a technology that can be used to functionalize many surfaces, imparting specialized properties such as increased broadband optical absorption or superhydrophilicity/superhydrophobicity. In this study, two unique classes of surface structures, below surface growth (BSG) and above surface growth (ASG) mounds, were formed by femtosecond laser surface processing on amorphous and polycrystalline Ni{sub 60}Nb{sub 40} with two different grain sizes. Cross sectional imaging of these mounds revealed thermal evidence of the unique formation processes for each class of surface structure. BSG mounds formed on all three substrates using the same laser parameters had similar surface morphology. The microstructures in the mounds were unaltered compared with the substrate before laser processing, suggesting their formation was dominated by preferential valley ablation. ASG mounds had similar morphology when formed on the polycrystalline Ni{sub 60}Nb{sub 40} substrates with 100 nm and 2 μm grain size. However, the ASG mounds had significantly wider diameter and higher peak-to-valley heights when the substrate was amorphous Ni{sub 60}Nb{sub 40}. Hydrodynamic melting was primarily responsible for ASG mound formation. On amorphous Ni{sub 60}Nb{sub 40} substrates, the ASG mounds are most likely larger due to lower thermal diffusivity. There was clear difference in growth mechanism of femtosecond laser processed BSG and ASG mounds, and grain size does not appear to be a factor.

Amorphous iron–chromium oxide nanoparticles with long-term stability

Energy Technology Data Exchange (ETDEWEB)

Iacob, Mihail [“Petru Poni” Institute of Macromolecular Chemistry, Iasi 700487 (Romania); Institute of Chemistry of ASM, Academiei str. 3, Chisinau 2028, Republic of Moldova (Moldova, Republic of); Cazacu, Maria, E-mail: mcazacu@icmpp.ro [“Petru Poni” Institute of Macromolecular Chemistry, Iasi 700487 (Romania); Turta, Constantin [Institute of Chemistry of ASM, Academiei str. 3, Chisinau 2028, Republic of Moldova (Moldova, Republic of); Doroftei, Florica [“Petru Poni” Institute of Macromolecular Chemistry, Iasi 700487 (Romania); Botko, Martin; Čižmár, Erik; Zeleňáková, Adriana; Feher, Alexander [Institute of Physics, Faculty of Science, P.J. Šafárik University, Park Angelinum 9, SK-04154 Košice (Slovakia)

2015-05-15

Highlights: • Fe–Cr oxide nanoparticles with pre-established metals ratio were obtained. • The amorphous state and its long-term stability were highlighted by X-ray diffraction. • The average diameter of dried nanoparticles was 3.5 nm, as was estimated by TEM, AFM. • In hexane dispersion, nanoparticles with diameter in the range 2.33–4.85 nm were found. • Superparamagnetic state of NPs co-exists with diamagnetism of the organic layer. - Abstract: Iron–chromium nanoparticles (NPs) were obtained through the thermal decomposition of μ{sub 3}-oxo heterotrinuclear (FeCr{sub 2}O) acetate in the presence of sunflower oil and dodecylamine (DA) as surfactants. The average diameter of the NPs was 3.5 nm, as estimated on the basis of transmission electron microscopy and atomic force microscopy images. Both techniques revealed the formation of roughly approximated spheres with some irregularities and agglomerations in larger spherical assemblies of 50–100 nm. In hexane, NPs with diameters in the 2.33–4.85 nm range are individually dispersed, as emphasized by dynamic light scattering measurements. The amorphous nature of the product was emphasized by X-ray powder diffraction. The study of the magnetic properties shows the presence of superparamagnetic state of iron–chromium oxide NPs and the diamagnetic contribution from DA layer forming a shell of NPs.

Computer simulation of radiation-induced nanostructure formation in amorphous materials

International Nuclear Information System (INIS)

Li, K.-D.; Perez-Bergquist, Alejandro; Wang, Lumin

2009-01-01

In this study, 3D simulations based on a theoretical model were developed to investigate radiation-induced nanostructure formation in amorphous materials. Model variables include vacancy production and recombination rates, ion sputtering effects, and redeposition of sputtered atoms. In addition, a phase field model was developed to predict vacancy diffusion as a function of free energies of mixing and interfacial energies. The distribution profile of the vacancy production rate along the depth of an irradiated matrix was considered as a near Gaussian approximation according to Monte-Carlo TRIM code calculations. Dynamic processes responsible for nanostructure evolution were simulated by updating the vacancy concentration profile over time. Simulated morphologies include cellular nanoholes, nanowalls, nanovoids, and nanofibers, with the resultant morphology dependant upon the incident ion species and ion fluence. These simulated morphologies are consistent with experimental observations achieved under comparable experimental conditions. Our model provides a distinct numerical approach to accurately predicting morphological results for ion-irradiation-induced nanostructures.

Efficient inverted bulk-heterojunction solar cells from low-temperature processing of amorphous ZnO buffer layers

KAUST Repository

Jagadamma, Lethy Krishnan; Abdelsamie, Maged; El Labban, Abdulrahman; Aresu, Emanuele; Ngongang Ndjawa, Guy Olivier; Anjum, Dalaver H.; Cha, Dong Kyu; Beaujuge, Pierre; Amassian, Aram

2014-01-01

In this report, we demonstrate that solution-processed amorphous zinc oxide (a-ZnO) interlayers prepared at low temperatures (∼100 °C) can yield inverted bulk-heterojunction (BHJ) solar cells that are as efficient as nanoparticle-based ZnO requiring comparably more complex synthesis or polycrystalline ZnO films prepared at substantially higher temperatures (150-400 °C). Low-temperature, facile solution-processing approaches are required in the fabrication of BHJ solar cells on flexible plastic substrates, such as PET. Here, we achieve efficient inverted solar cells with a-ZnO buffer layers by carefully examining the correlations between the thin film morphology and the figures of merit of optimized BHJ devices with various polymer donors and PCBM as the fullerene acceptor. We find that the most effective a-ZnO morphology consists of a compact, thin layer with continuous substrate coverage. In parallel, we emphasize the detrimental effect of forming rippled surface morphologies of a-ZnO, an observation which contrasts with results obtained in polycrystalline ZnO thin films, where rippled morphologies have been reported to improve efficiency. After optimizing the a-ZnO morphology at low processing temperature for inverted P3HT:PCBM devices, achieving a power conversion efficiency (PCE) of ca. 4.1%, we demonstrate inverted solar cells with low bandgap polymer donors on glass/flexible PET substrates: PTB7:PC71BM (PCE: 6.5% (glass)/5.6% (PET)) and PBDTTPD:PC71BM (PCE: 6.7% (glass)/5.9% (PET)). Finally, we show that a-ZnO based inverted P3HT:PCBM BHJ solar cells maintain ca. 90-95% of their initial PCE even after a full year without encapsulation in a nitrogen dry box, thus demonstrating excellent shelf stability. The insight we have gained into the importance of surface morphology in amorphous zinc oxide buffer layers should help in the development of other low-temperature solution-processed metal oxide interlayers for efficient flexible solar cells. This journal is

Exclusive Hydrogen Generation by Electrocatalysts Coated with an Amorphous Chromium-Based Layer Achieving Efficient Overall Water Splitting

KAUST Repository

Qureshi, Muhammad

2017-08-08

Successful conversion of renewable energy to useful chemicals requires efficient devices that can electrocatalyze or photocatalyze redox reactions, e.g., overall water splitting. Excellent electrocatalysts for the hydrogen evolution reaction (HER), such as Pt, can also cause other side-reactions, including the water-forming back-reaction from H2 and O2 products. A Cr-based amorphous layer coated on catalysts can work as a successful surface modifier that avoids the back-reaction, but its capabilities and limitations toward other species have not been studied. Herein, we investigated the Cr-based layer on Pt from perspectives of both electrocatalysis and photocatalysis using redox-active molecules/ions (O2, ferricyanide, IO3–, S2O82–, H2O2, and CO gas). Our systematic study revealed that utilization of the Cr-based layer realized an exclusive cathodic reaction only to HER, even in the presence of the aforementioned reactive species, suggesting that Cr-based layers work as membranes, as well as corrosion and poison inhibition layers. However, the Cr-based layer experienced self-oxidation and dissolved into the aqueous phase when a strong oxidizing agent or low pH was present. Presented herein are fundamental and critical aspects of the Cr-based modifier, which is essential for the successful and practical development of solar fuel production systems.

Exclusive Hydrogen Generation by Electrocatalysts Coated with an Amorphous Chromium-Based Layer Achieving Efficient Overall Water Splitting

KAUST Repository

Qureshi, Muhammad; Shinagawa, Tatsuya; Tsiapis, Nikolaos; Takanabe, Kazuhiro

2017-01-01

Successful conversion of renewable energy to useful chemicals requires efficient devices that can electrocatalyze or photocatalyze redox reactions, e.g., overall water splitting. Excellent electrocatalysts for the hydrogen evolution reaction (HER), such as Pt, can also cause other side-reactions, including the water-forming back-reaction from H2 and O2 products. A Cr-based amorphous layer coated on catalysts can work as a successful surface modifier that avoids the back-reaction, but its capabilities and limitations toward other species have not been studied. Herein, we investigated the Cr-based layer on Pt from perspectives of both electrocatalysis and photocatalysis using redox-active molecules/ions (O2, ferricyanide, IO3–, S2O82–, H2O2, and CO gas). Our systematic study revealed that utilization of the Cr-based layer realized an exclusive cathodic reaction only to HER, even in the presence of the aforementioned reactive species, suggesting that Cr-based layers work as membranes, as well as corrosion and poison inhibition layers. However, the Cr-based layer experienced self-oxidation and dissolved into the aqueous phase when a strong oxidizing agent or low pH was present. Presented herein are fundamental and critical aspects of the Cr-based modifier, which is essential for the successful and practical development of solar fuel production systems.

Formation Energies of Native Point Defects in Strained-Layer Superlattices (Postprint)

Science.gov (United States)

2017-06-05

potential; bulk materials; total energy calculations; entropy; strained- layer superlattice (SLS) 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF...AFRL-RX-WP-JA-2017-0217 FORMATION ENERGIES OF NATIVE POINT DEFECTS IN STRAINED- LAYER SUPERLATTICES (POSTPRINT) Zhi-Gang Yu...2016 Interim 11 September 2013 – 5 November 2016 4. TITLE AND SUBTITLE FORMATION ENERGIES OF NATIVE POINT DEFECTS IN STRAINED- LAYER SUPERLATTICES

Study on the substrate-induced crystallisation of amorphous SiC-precursor ceramics. TIB/A; Untersuchungen zur substratinduzierten Kristallisation amorpher SiC-Precursorkeramiken

Energy Technology Data Exchange (ETDEWEB)

Rau, C.

2000-12-01

In the present thesis the crystallization behaviour of amorphous silicon-carbon materials (SiC{sub x}) was studied. The main topic of the experimental studies formed thereby the epitactical crystallization of thin silicon carbide layers on monocrystalline substrates of silicon carbides or silicon. Furthermore by thermolysis of the polymer amorphous SiC{sub x}-powder was obtained.

Defects in Amorphous Semiconductors: The Case of Amorphous Indium Gallium Zinc Oxide

Science.gov (United States)

de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

2018-05-01

Based on a rational classification of defects in amorphous materials, we propose a simplified model to describe intrinsic defects and hydrogen impurities in amorphous indium gallium zinc oxide (a -IGZO). The proposed approach consists of organizing defects into two categories: point defects, generating structural anomalies such as metal—metal or oxygen—oxygen bonds, and defects emerging from changes in the material stoichiometry, such as vacancies and interstitial atoms. Based on first-principles simulations, it is argued that the defects originating from the second group always act as perfect donors or perfect acceptors. This classification simplifies and rationalizes the nature of defects in amorphous phases. In a -IGZO, the most important point defects are metal—metal bonds (or small metal clusters) and peroxides (O - O single bonds). Electrons are captured by metal—metal bonds and released by the formation of peroxides. The presence of hydrogen can lead to two additional types of defects: metal-hydrogen defects, acting as acceptors, and oxygen-hydrogen defects, acting as donors. The impact of these defects is linked to different instabilities observed in a -IGZO. Specifically, the diffusion of hydrogen and oxygen is connected to positive- and negative-bias stresses, while negative-bias illumination stress originates from the formation of peroxides.

Photonic crystals, amorphous materials, and quasicrystals.

Science.gov (United States)

Edagawa, Keiichi

2014-06-01

Photonic crystals consist of artificial periodic structures of dielectrics, which have attracted much attention because of their wide range of potential applications in the field of optics. We may also fabricate artificial amorphous or quasicrystalline structures of dielectrics, i.e. photonic amorphous materials or photonic quasicrystals. So far, both theoretical and experimental studies have been conducted to reveal the characteristic features of their optical properties, as compared with those of conventional photonic crystals. In this article, we review these studies and discuss various aspects of photonic amorphous materials and photonic quasicrystals, including photonic band gap formation, light propagation properties, and characteristic photonic states.

Characterization of BaBi2Ta2O9 prepared through amorphous precursor

International Nuclear Information System (INIS)

Maczka, M.; Kepinski, L.; Hermanowicz, K.; Dacko, S.; Czapla, Z.; Hanuza, J.

2011-01-01

Research highlights: → Formation of Bi-layered BaBi 2 Ta 2 O 9 proceeds via an intermediate fluorite phase. → Mechanochemical activation lowers the synthesis temperature by 150-200 deg. C. → The lateral size of the synthesized plate-like crystallites is about 100-200 nm. → Properties of the synthesized crystallites are different from the bulk material. - Abstract: Formation of ferroelectric BaBi 2 Ta 2 O 9 by annealing of an amorphous precursor prepared by high energy milling in ball mill has been studied by X-ray, scanning electron microscopy (SEM), Raman, infrared spectroscopy (IR), diffuse reflectivity and dielectric measurements. Our results show that formation of Bi-layered BaBi 2 Ta 2 O 9 proceeds via an intermediate fluorite phase. Mechanochemical activation allows obtaining BaBi 2 Ta 2 O 9 at short time and much lower temperatures than those required in a conventional solid state reaction. The lateral size of the plate-like crystallites is about 100-200 nm and properties of the synthesized particles are different compared to the bulk material.

A humidity sensitive two-dimensional tunable amorphous photonic structure in the outer layer of bivalve ligament from Sunset Siliqua

International Nuclear Information System (INIS)

Zhang, Weigang; Zhang, Gangsheng

2015-01-01

A humidity sensitive two-dimensional tunable amorphous photonic structure (2D TAPS) in the outer layer of bivalve ligament from Sunset Siliqua (OLLS) was reported in this paper. The structural color and microstructure of OLLS were investigated by reflection spectra and scanning electron microscopy, respectively. The results indicate that the reflection peak wavelength of the wet OLLS blue-shifts from 454 nm to 392 nm with the increasing of air drying time from 0 to 40 min, while the reflectivity decreases gradually and vanishes at last, relevant color changes from blue to black background color. The structural color in the OLLS is produced by a two-dimensional amorphous photonic structure consisting of aligned protein fibers, in which the diameter of protein fiber and the inter-fiber spacing are 101 ± 12 nm. Water can reversibly tune the reflection peak wavelength and reflectivity of this photonic structure, and the regulation achieved through dynamically tuning the interaction between inter-fiber spacing and average refractive index. - Highlights: • A humidity sensitive two-dimensional tunable amorphous photonic structure • Water can reversibly tune the reflection peak wavelength and reflectivity of this photonic structure. • This photonic structure may yield very useful template for artificial structures

A humidity sensitive two-dimensional tunable amorphous photonic structure in the outer layer of bivalve ligament from Sunset Siliqua

Energy Technology Data Exchange (ETDEWEB)

Zhang, Weigang, E-mail: abczwg15@163.com [College of Materials and Chemical Engineering, Chuzhou University, Chuzhou 239000 (China); Zhang, Gangsheng [College of Material Science and Technology, Guangxi University, Nanning 530004 (China)

2015-07-01

A humidity sensitive two-dimensional tunable amorphous photonic structure (2D TAPS) in the outer layer of bivalve ligament from Sunset Siliqua (OLLS) was reported in this paper. The structural color and microstructure of OLLS were investigated by reflection spectra and scanning electron microscopy, respectively. The results indicate that the reflection peak wavelength of the wet OLLS blue-shifts from 454 nm to 392 nm with the increasing of air drying time from 0 to 40 min, while the reflectivity decreases gradually and vanishes at last, relevant color changes from blue to black background color. The structural color in the OLLS is produced by a two-dimensional amorphous photonic structure consisting of aligned protein fibers, in which the diameter of protein fiber and the inter-fiber spacing are 101 ± 12 nm. Water can reversibly tune the reflection peak wavelength and reflectivity of this photonic structure, and the regulation achieved through dynamically tuning the interaction between inter-fiber spacing and average refractive index. - Highlights: • A humidity sensitive two-dimensional tunable amorphous photonic structure • Water can reversibly tune the reflection peak wavelength and reflectivity of this photonic structure. • This photonic structure may yield very useful template for artificial structures.

Surface layer effects on waste glass corrosion

International Nuclear Information System (INIS)

Feng, X.

1993-01-01

Water contact subjects waste glass to chemical attack that results in the formation of surface alteration layers. Two principal hypotheses have been advanced concerning the effect of surface alteration layers on continued glass corrosion: (1) they act as a mass transport barrier and (2) they influence the chemical affinity of the glass reaction. In general, transport barrier effects have been found to be less important than affinity effects in the corrosion of most high-level nuclear waste glasses. However, they can be important under some circumstances, for example, in a very alkaline solution, in leachants containing Mg ions, or under conditions where the matrix dissolution rate is very low. The latter suggests that physical barrier effect may affect the long-term glass dissolution rate. Surface layers influence glass reaction affinity through the effects of the altered glass and secondary phases on the solution chemistry. The reaction affinity may be controlled by various precipitates and crystalline phases, amorphous silica phases, gel layer, or all the components of the glass. The surface alteration layers influence radionuclide release mainly through colloid formation, crystalline phase incorporation, and gel layer retention. This paper reviews current understanding and uncertainties

Detection of charged particles in amorphous silicon layers

International Nuclear Information System (INIS)

Perez-Mendez, V.; Morel, J.; Kaplan, S.N.; Street, R.A.

1986-02-01

The successful development of radiation detectors made from amorphous silicon could offer the possibility for relatively easy construction of large area position-sensitive detectors. We have conducted a series of measurements with prototype detectors, on signals derived from alpha particles. The measurement results are compared with simple model calculations, and projections are made of potential applications in high-energy and nuclear physics

ELABORATION OF AMORPHOUS METALS AND GLASS TRANSITIONFORMATION AND CHARACTERIZATION OF AMORPHOUS METALS

OpenAIRE

Giessen , B.; Whang , S.

1980-01-01

This review deals with the definition of amorphous and glassy metals ; the principal methods for their preparation by atom-by-atom deposition, rapid liquid quenching and particle bombardment ; criteria for their formation, especially ready glass formation (RGF) and its alloy chemical foundations ; and their classification. This is followed by a discussion of their elastic and plastic properties (Young's modulus and microhardness) and thermal stability (glass transition and crystallization tem...

Formation mechanism of the protective layer in a blast furnace hearth

Science.gov (United States)

Jiao, Ke-xin; Zhang, Jian-liang; Liu, Zheng-jian; Xu, Meng; Liu, Feng

2015-10-01

A variety of techniques, such as chemical analysis, scanning electron microscopy-energy dispersive spectroscopy, and X-ray diffraction, were applied to characterize the adhesion protective layer formed below the blast furnace taphole level when a certain amount of titanium- bearing burden was used. Samples of the protective layer were extracted to identify the chemical composition, phase assemblage, and distribution. Furthermore, the formation mechanism of the protective layer was determined after clarifying the source of each component. Finally, a technical strategy was proposed for achieving a stable protective layer in the hearth. The results show that the protective layer mainly exists in a bilayer form in the sidewall, namely, a titanium-bearing layer and a graphite layer. Both the layers contain the slag phase whose major crystalline phase is magnesium melilite (Ca2MgSi2O7) and the main source of the slag phase is coke ash. It is clearly determined that solid particles such as graphite, Ti(C,N) and MgAl2O4 play an important role in the formation of the protective layer, and the key factor for promoting the formation of a stable protective layer is reasonable control of the evolution behavior of coke.

Effects of the Buffer Layers on the Adhesion and Antimicrobial Properties of the Amorphous ZrAlNiCuSi Films

Science.gov (United States)

Chiang, Pai-Tsung; Chen, Guo-Ju; Jian, Sheng-Rui; Shih, Yung-Hui

2011-06-01

To extend the practical applications of the bulk metallic glasses (BMGs), the preparation of the metallic glass coatings on various substrates becomes an important research issue. Among the interfacial properties of the coatings, the adhesion between films and substrates is the most crucial. In this study, amorphous Zr61Al7.5Ni10Cu17.5Si4 (ZrAlNiCuSi) thin films were deposited on SUS304 stainless steel at various sputtering powers by DC sputtering. According to the scratch tests, the introduction of the Cr and Ti buffer layers effectively improves the adhesion between the amorphous thin films and substrate without changing the surface properties, such as roughness and morphology. The antimicrobial results show that the biological activities of these microbes, except Acinetobacter baumannii, are effectively suppressed during the test period.

Amorphous Cu-Ag films with high stability

International Nuclear Information System (INIS)

Reda, I.M.; Hafner, J.; Pongratz, P.; Wagendristel, A.; Bangert, H.; Bhat, P.K.

1982-06-01

Films produced by quenching Cu-Ag vapour onto cooled substrates at liquid nitrogen temperature have been investigated using electron microscopy, electron diffraction and electrical resistivity measurements. In the composition range from 30 to 70 at% Cu the as quenched films are amorphous, and within the range of 35 to 63 at% Cu the amorphous phase is stable above room temperature with a maximum crystallization temperature Tsub(c)=381 K at 47.5 at% Cu. Crystallization results in the formation of a supersaturated fcc solid solution which decomposes in a second crystallization step. The effect of deposition rate, film thickness, temperature and surface of the substrate, and most importantly of the composition on the transition temperatures has been investigated. A comparative study of the formation of amorphous phases in a wide variety of Cu-based alloys is presented. (author)

Self-organized formation of metal-carbon nanostructures by hyperthermal ion deposition

Energy Technology Data Exchange (ETDEWEB)

Hannstein, I.K.

2006-04-26

The quasi-simultaneous deposition of mass-selected hyperthermal carbon and metal ions results in a variety of interesting film morphologies, depending on the metal used and the deposition conditions. The observed features are of the order of a few nanometres and are therefore interesting for future potential applications in the various fields of nanotechnology. The present study focuses on the structural analysis of amorphous carbon films containing either copper, silver, gold, or iron using amongst others Rutherford Backscattering Spectroscopy, High Resolution Transmission Electron Microscopy, and Energy Dispersive X-Ray Spectroscopy. The film morphologies found are as follows: copper-containing films consist of copper nanoclusters with sizes ranging from about 3 to 9 nm uniformly distributed throughout the amorphous carbon matrix. The cluster size hereby rises with the copper content of the films. The silver containing films decompose into a pure amorphous carbon film with silver agglomerates at the surface. Both, the gold- and the iron-containing films show a multilayer structure of metal-rich layers with higher cluster density separated by metal-depleted amorphous carbon layers. The layer distances are of the order of up to 15 nm in the case of gold-carbon films and 7 nm in the case of iron-carbon films. The formation of theses different structures cannot be treated in the context of conventional self-organization mechanisms basing upon thermal diffusion and equilibrium thermodynamics. Instead, an ion-induced atomic transport, sputtering effects, and the stability of small metal clusters were taken into account in order to model the structure formation processes. A similar multilayer morphology was recently also reported in the literature for metal-carbon films grown by magnetron sputtering techniques. In order to investigate, whether the mechanisms are the same as in the case of the ion beam deposited films described above, first experiments were conducted

Interface feature characterization and Schottky interfacial layer confirmation of TiO{sub 2} nanotube array film

Energy Technology Data Exchange (ETDEWEB)

Li, Hongchao [State Key Laboratory of Powder Metallurgy, Central South University, 410083 Changsha (China); Chongyi Zhangyuan Tungsten Industry Corporation Limited, 341300 Ganzhou (China); Tang, Ningxin; Yang, Hongzhi; Leng, Xian [State Key Laboratory of Powder Metallurgy, Central South University, 410083 Changsha (China); Zou, Jianpeng, E-mail: zoujp@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, 410083 Changsha (China)

2015-11-15

Highlights: • Interfacial fusion of TiO{sub 2} nanotube film increases with annealing temperature. • Interface bonding force of the film increases with annealing temperature. • We report the forth stage of nanofibers formation in the growing mechanism. • TiO{sub 2} nanotubes grow from Schottky interface layer rather than from Ti substrate. • Schottky interface layer's thickness of 35–45 nm is half the diameter of nanotube. - Abstract: We report here characterization of the interfacial microstructure and properties of titanium dioxide (TiO{sub 2}) nanotube array films fabricated by anodization. Field effect scanning electron microscopy (FESEM), X-ray diffraction (XRD), nanoindentation, atomic force microscopy (AFM), selected area electron diffraction (SAED), and high-resolution transmission electron microscopy (HRTEM) were used to characterize the interface of the film. With increasing annealing temperature from 200 °C to 800 °C, the interfacial fusion between the film and the Ti substrate increased. The phase transformation of the TiO{sub 2} nanotube film from amorphous to anatase to rutile took place gradually; as the phase transformation progressed, the force needed to break the film increased. The growth of TiO{sub 2} nanotube arrays occurs in four stages: barrier layer formation, penetrating micropore formation, regular nanotube formation, and nanofiber formation. The TiO{sub 2} nanotubes grow from the Schottky interface layer rather than from the Ti substrate. The Schottky interface layer's thickness of 35–45 nm was identified as half the diameter of the corresponding nanotube, which shows good agreement to the Schottky interface layer growth model. The TiO{sub 2} nanotube film was amorphous and the Ti substrate was highly crystallized with many dislocation walls.

Detection of charged particles in amorphous silicon layers

International Nuclear Information System (INIS)

Kaplan, S.N.; Morel, J.R.; Mulera, T.A.; Perez-Mendez, V.; Schnurmacher, G.; Street, R.A.

1985-10-01

The successful development of radiation detectors made from amorphous silicon could offer the possibility for relatively easy construction of large area position-sensitive detectors. We have conducted a series of measurements with prototype detectors, on signals derived from alpha particles. The measurement results are compared with simple model calculations, and projections are made of potential applications in high-energy and nuclear physics. 4 refs., 7 figs

Formation, Physicochemical Characterization, and Thermodynamic Stability of the Amorphous State of Drugs and Excipients.

Science.gov (United States)

Martino, Piera Di; Magnoni, Federico; Peregrina, Dolores Vargas; Gigliobianco, Maria Rosa; Censi, Roberta; Malaj, Ledjan

2016-01-01

Drugs and excipients used for pharmaceutical applications generally exist in the solid (crystalline or amorphous) state, more rarely as liquid materials. In some cases, according to the physicochemical nature of the molecule, or as a consequence of specific technological processes, a compound may exist exclusively in the amorphous state. In other cases, as a consequence of specific treatments (freezing and spray drying, melting and co-melting, grinding and compression), the crystalline form may convert into a completely or partially amorphous form. An amorphous material shows physical and thermodynamic properties different from the corresponding crystalline form, with profound repercussions on its technological performance and biopharmaceutical properties. Several physicochemical techniques such as X-ray powder diffraction, thermal methods of analysis, spectroscopic techniques, gravimetric techniques, and inverse gas chromatography can be applied to characterize the amorphous form of a compound (drug or excipient), and to evaluate its thermodynamic stability. This review offers a survey of the technologies used to convert a crystalline solid into an amorphous form, and describes the most important techniques for characterizing the amorphous state of compounds of pharmaceutical interest.

Photo-induced cooperative covalent-bond switching in amorphous arsenic selenide

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska str., Lviv, UA-290031 (Ukraine); Balitska, V [Lviv Scientific Research Institute of Materials of SRC ' Carat' , 202, Stryjska str., Lviv, UA-290031 (Ukraine); Filipecki, J [Institute of Physics of Jan Dlugosz University, 13/15, Al. Armii Krajowej, Czestochowa, PL-42201 (Poland)

2005-01-01

A microstructural mechanism of photoinduced transformations in amorphous arsenic selenide films was studied with IR Fourier-spectroscopy technique in 300-100 cm{sup -1} region. It was shown that stage of irreversible photostructural changes was connected with cooperative process of coordination defect formation accompanied by homopolar chemical bonds switching in heteropolar ones. On the contrary, reversible photoinduced effects were caused by heteropolar chemical bonds switching in homopolar ones, as well as additional channel of bridge heteropolar bonds switching in short-layer ones. The both processes were associated with formation of anomalously coordinated defect pairs and accompanying atomic displacements at the level of medium-range ordering. The developed mathematical simulation procedure testified in a favour of defect-related origin of the reversible photo-thermallyinduced transformations, since their kinetics corresponded to known stretched-exponential dependence, tending to bimolecular behaviour rather then to single-exponential one.

Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants

International Nuclear Information System (INIS)

Lopez, Pedro; Pelaz, Lourdes; Marques, Luis A.; Santos, Ivan; Aboy, Maria; Barbolla, Juan

2004-01-01

Solid phase epitaxial regrowth of pre-amorphizing implants has received significant attention as a method to achieve high dopant activation with minimal diffusion at low implant temperatures and suppress channelling. Therefore, a good understanding of the amorphization and regrowth mechanisms is required in process simulators. We present an atomistic amorphization and recrystallization model that uses the interstitial-vacancy (I-V) pair as a building block to describe the amorphous phase. I-V pairs are locally characterized by the number of neighbouring I-V pairs. This feature captures the damage generation and the dynamical annealing during ion implantation, and also explains the annealing behaviour of amorphous layers and amorphous pockets

Direct observation of nanometer-scale amorphous layers and oxide crystallites at grain boundaries in polycrystalline Sr1−xKxFe2As2 superconductors

KAUST Repository

Wang, Lei; Ma, Yanwei; Wang, Qingxiao; Li, Kun; Zhang, Xixiang; Qi, Yanpeng; Gao, Zhaoshun; Zhang, Xianping; Wang, Dongliang; Yao, Chao; Wang, Chunlei

2011-01-01

We report here an atomic resolution study of the structure and composition of the grain boundaries in polycrystallineSr0.6K0.4Fe2As2superconductor. A large fraction of grain boundaries contain amorphous layers larger than the coherence length, while

Amino acids as co-amorphous excipients for simvastatin and glibenclamide

DEFF Research Database (Denmark)

Laitinen, Riikka; Löbmann, Korbinian; Grohganz, Holger

2014-01-01

to a few drugs and amino acids. To facilitate the rational selection of amino acids, the practical importance of the amino acid coming from the biological target site of the drug (and associated intermolecular interactions) needs to be established. In the present study, the formation of co......-amorphous systems using cryomilling and combinations of two poorly water-soluble drugs (simvastatin and glibenclamide) with the amino acids aspartic acid, lysine, serine, and threonine was investigated. Solid-state characterization with X-ray powder diffraction, differential scanning calorimetry, and Fourier...... in the mixtures. Interestingly, a favorable effect by the excipients on the tautomerism of amorphous glibenclamide in the co-amorphous blends was seen, as the formation of the thermodynamically less stable imidic acid tautomer of glibenclamide was suppressed compared to that of the pure amorphous drug...

Effect of Annealed Oxides on the Formation of Inhibition Layer During Hot-Dip Galvanizing of 590Mpa Trip Steel

International Nuclear Information System (INIS)

Kim, Seong Hwan; Huh, Joo Youl; Lee, Suk Kyu; Park, Rho Bum; Kim, Jong Sang

2011-01-01

The selective surface oxidation of a transformation-induced-plasticity (TRIP) steel containing 1.6 wt.% Mn and 1.5 wt.% Si during annealing at 800 .deg. C was investigated for its influence on the formation of an inhibition layer during hot-dip galvanizing. The selective oxidation of the alloying elements and the oxide morphology were significantly influenced by the annealing atmosphere. The pure N 2 atmosphere with a dew point -40 .deg. C promoted the selective oxidation of Mn as a crystalline Mn 2 SiO 4 phase, whereas the N 2 + 10% H 2 atmosphere with the same dew point -40 .deg. C promoted the selective oxidation of Si as an amorphous Si-rich oxide phase. During hot-dip galvanizing, the Mn 2 SiO 4 phase was reduced more readily by Al in the Zn bath than the Si-rich oxide phase. Consequently, the pure N 2 atmosphere resulted in a higher formation rate of Fe 2 Al 5 particles at the Zn/steel interface and better galvanizability than the N 2 + 10% H 2 atmosphere

Development of Amorphous Filler Alloys for the Joining of Nuclear Materials

Energy Technology Data Exchange (ETDEWEB)

Lee, Jai Young; Kim, Dong Myong; Kang, Yoon Sun; Jung, Jae Han; Yu, Ji Sang; Kim, Hae Yeol; Lee, Ho [Korea Advanced Institute of Science and Technology, Taejon (Korea, Republic of)

1997-08-01

In the case of advanced CANDU fuel being useful in future, the fabrication processes for soundness insurance of a improved nuclear fuel bundle must be developed at the same time because it have three times combustibility as existing fuel. In particular, as the improved nuclear fuel bundle in which a coated layer thickness is thinner than existing that, firmity of a joint part is very important. Therefore, we need to develop a joint technique using new solder which can settle a potential problem in current joining method. As the Zr-Be alloy system is composed with the elements having high neutron permeability, they are suitable for joint of nuclear fuel pack. The various compositions Zr-Be binary metallic glass alloys were applicable to the joining the nuclear fuel bundles. The thickness of joint layer using the Zr{sub 1}-{sub x}Be{sub x} amorphous ribbon as a solder is thinner than that using physical vapor deposited Be. Among the Zr{sub 1}-{sub x}Be{sub x} amorphous binary alloys, Zr{sub 0}.7Be-0.3 binary alloy is the most appropriate for joint of nuclear fuel bundle because its joint layer is smooth and thin due to low degree of Be diffusion. In the case of the Zr{sub (}0.7-y)Ti{sub y}Be{sub 0}.3 and Zr{sub (}0.7-y)Nb{sub y}Be{sub 0}3 ternary amorphous alloys, the crystallization temperature(T{sub x}) and activation energy(E{sub x}) increase as the contents of Nb and Ti increase respectively. In the aspect of thermal stability, the ternary amorphous alloys are superior than Zr-Be binary amorphous alloys and Zr-Ti-Be amorphous alloy is superior than Zr-Nb-Be amorphous alloy. 12 refs., 5 tabs., 25 figs. (author)

Amorphous silicon passivation for 23.3% laser processed back contact solar cells

Science.gov (United States)

Carstens, Kai; Dahlinger, Morris; Hoffmann, Erik; Zapf-Gottwick, Renate; Werner, Jürgen H.

2017-08-01

This paper presents amorphous silicon deposited at temperatures below 200 °C, leading to an excellent passivation layer for boron doped emitter and phosphorus doped back surface field areas in interdigitated back contact solar cells. A higher deposition temperature degrades the passivation of the boron emitter by an increased hydrogen effusion due to lower silicon hydrogen bond energy, proved by hydrogen effusion measurements. The high boron surface doping in crystalline silicon causes a band bending in the amorphous silicon. Under these conditions, at the interface, the intentionally undoped amorphous silicon becomes p-type conducting, with the consequence of an increased dangling bond defect density. For bulk amorphous silicon this effect is described by the defect pool model. We demonstrate, that the defect pool model is also applicable to the interface between amorphous and crystalline silicon. Our simulation shows the shift of the Fermi energy towards the valence band edge to be more pronounced for high temperature deposited amorphous silicon having a small bandgap. Application of optimized amorphous silicon as passivation layer for the boron doped emitter and phosphorus doped back surface field on the rear side of laser processed back contact solar cells, fabricated using four laser processing steps, yields an efficiency of 23.3%.

Emerging trends in the stabilization of amorphous drugs.

Science.gov (United States)

Laitinen, Riikka; Löbmann, Korbinian; Strachan, Clare J; Grohganz, Holger; Rades, Thomas

2013-08-30

The number of active pharmaceutical substances having high therapeutic potential but low water solubility is constantly increasing, making it difficult to formulate these compounds as oral dosage forms. The solubility and dissolution rate, and thus potentially the bioavailability, of these poorly water-soluble drugs can be increased by the formation of stabilized amorphous forms. Currently, formulation as solid polymer dispersions is the preferred method to enhance drug dissolution and to stabilize the amorphous form of a drug. The purpose of this review is to highlight emerging alternative methods to amorphous polymer dispersions for stabilizing the amorphous form of drugs. First, an overview of the properties and stabilization mechanisms of amorphous forms is provided. Subsequently, formulation approaches such as the preparation of co-amorphous small-molecule mixtures and the use of mesoporous silicon and silica-based carriers are presented as potential means to increase the stability of amorphous pharmaceuticals. Copyright © 2012 Elsevier B.V. All rights reserved.

Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors.

Science.gov (United States)

Liu, Xianzhe; Xu, Hua; Ning, Honglong; Lu, Kuankuan; Zhang, Hongke; Zhang, Xiaochen; Yao, Rihui; Fang, Zhiqiang; Lu, Xubing; Peng, Junbiao

2018-03-07

Amorphous Silicon-Tin-Oxide thin film transistors (a-STO TFTs) with Mo source/drain electrodes were fabricated. The introduction of a ~8 nm MoO x interlayer between Mo electrodes and a-STO improved the electron injection in a-STO TFT. Mo adjacent to the a-STO semiconductor mainly gets oxygen atoms from the oxygen-rich surface of a-STO film to form MoO x interlayer. The self-formed MoO x interlayer acting as an efficient interface modification layer could conduce to the stepwise internal transport barrier formation while blocking Mo atoms diffuse into a-STO layer, which would contribute to the formation of ohmic contact between Mo and a-STO film. It can effectively improve device performance, reduce cost and save energy for the realization of large-area display with high resolution in future.

Amorphous GaP produced by ion implantation

International Nuclear Information System (INIS)

Shimada, T.; Kato, Y.; Shiraki, Y.; Komatsubara, K.F.

1976-01-01

Two types of non-crystalline states ('disordered' and 'amorphous') of GaP were produced by using ion implantation and post annealing. A structural-phase-transition-like annealing behaviour from the 'disordered' state to the 'amorphous' state was observed. The ion dose dependence and the annealing behaviour of the atomic structure of GaP implanted with 200 keV -N + ions were studied by using electron diffraction, backscattering and volume change measurements. The electronic structure was also investigated by measuring optical absorption and electrical conductivity. The implanted layer gradually loses the crystalline order with the increase of the nitrogen dose. The optical absorption coefficient α and electric conductivity sigma of GaP crystals implanted with 200 keV -N + ions of 1 x 10 16 cm -2 were expressed as αhν = C(hν - E 0 )sup(n) and log sigma = A -BTsup(-1/4), respectively. Moreover, the volume of the implanted layer increased about three percent and the electron diffraction pattern was diffused halo whose intensity monotonically decreases along the radial direction. These results indicate that the as-implanted layer has neither a long range order or short range order ('disordered state'). In the sample implanted at 1 x 10 16 cm -2 , a structural phase-transition-like annealing stage was observed at around 400 0 C. That is, the optical absorption coefficient abruptly fell off from 6 x 10 4 to 7 x 10 3 cm -1 and the volume of the implanted layer decreased about 2% within an increase of less than 10 degrees in the anneal temperature. Moreover, the short range order of the lattice structure appeared in the electron diffraction pattern. According to the backscattering experiment, the heavily implanted GaP was still in the non-crystalline state even after annealing. These facts suggest that heavily implanted GaP, followed by annealing at around 400 0 C, is in the 'amorphous' state, although as-implanted GaP is not in the 'amorphous' state but in the

Amorphous and nanocrystalline phase formation in highly-driven Al-based binary alloys

International Nuclear Information System (INIS)

Kalay, Yunus Eren

2008-01-01

Remarkable advances have been made since rapid solidification was first introduced to the field of materials science and technology. New types of materials such as amorphous alloys and nanostructure materials have been developed as a result of rapid solidification techniques. While these advances are, in many respects, ground breaking, much remains to be discerned concerning the fundamental relationships that exist between a liquid and a rapidly solidified solid. The scope of the current dissertation involves an extensive set of experimental, analytical, and computational studies designed to increase the overall understanding of morphological selection, phase competition, and structural hierarchy that occurs under far-from equilibrium conditions. High pressure gas atomization and Cu-block melt-spinning are the two different rapid solidification techniques applied in this study. The research is mainly focused on Al-Si and Al-Sm alloy systems. Silicon and samarium produce different, yet favorable, systems for exploration when alloyed with aluminum under far-from equilibrium conditions. One of the main differences comes from the positions of their respective T 0 curves, which makes Al-Si a good candidate for solubility extension while the plunging T 0 line in Al-Sm promotes glass formation. The rapidly solidified gas-atomized Al-Si powders within a composition range of 15 to 50 wt% Si are examined using scanning and transmission electron microscopy. The non-equilibrium partitioning and morphological selection observed by examining powders at different size classes are described via a microstructure map. The interface velocities and the amount of undercooling present in the powders are estimated from measured eutectic spacings based on Jackson-Hunt (JH) and Trivedi-Magnin-Kurz (TMK) models, which permit a direct comparison of theoretical predictions. For an average particle size of 10 (micro)m with a Peclet number of ∼0.2, JH and TMK deviate from each other. This

The bonding of protective films of amorphic diamond to titanium

Science.gov (United States)

Collins, C. B.; Davanloo, F.; Lee, T. J.; Jander, D. R.; You, J. H.; Park, H.; Pivin, J. C.

1992-04-01

Films of amorphic diamond can be deposited from laser plasma ions without the use of catalysts such as hydrogen or fluorine. Prepared without columnar patterns of growth, the layers of this material have been reported to have ``bulk'' values of mechanical properties that have suggested their usage as protective coatings for metals. Described here is a study of the bonding and properties realized in one such example, the deposition of amorphic diamond on titanium. Measurements with Rutherford backscattering spectrometry and transmission electron microscopy showed that the diamond coatings deposited from laser plasmas were chemically bonded to Ti substrates in 100-200-Å-thick interfacial layers containing some crystalline precipitates of TiC. Resistance to wear was estimated with a modified sand blaster and in all cases the coating was worn away without any rupture or deterioration of the bonding layer. Such wear was greatly reduced and lifetimes of the coated samples were increased by a factor of better than 300 with only 2.7 μm of amorphic diamond.

Amorphization reaction in thin films of elemental Cu and Y

Science.gov (United States)

Johnson, R. W.; Ahn, C. C.; Ratner, E. R.

1989-10-01

Compositionally modulated thin films of Cu and Y were prepared in an ultrahigh-vacuum dc ion-beam deposition chamber. The amorphization reaction was monitored by in situ x-ray-diffraction measurements. Growth of amorphous Cu1-xYx is observed at room temperature with the initial formation of a Cu-rich amorphous phase. Further annealing in the presence of unreacted Y leads to Y enrichment of the amorphous phase. Growth of crystalline CuY is observed for T=469 K. Transmission-electron-microscopy measurements provide real-space imaging of the amorphous interlayer and growth morphology. Models are developed, incorporating metastable interfacial and bulk free-energy diagrams, for the early stage of the amorphization reaction.

Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

Energy Technology Data Exchange (ETDEWEB)

Li, T. T., E-mail: li48@llnl.gov; Bayu Aji, L. B.; Heo, T. W.; Kucheyev, S. O.; Campbell, G. H. [Materials Science Division, Lawrence Livermore National Laboratory, 7000 East Ave., Livermore, California 94551 (United States); Santala, M. K. [Mechanical, Industrial, and Manufacturing Engineering, Oregon State University, 204 Rogers Hall, Corvallis, Oregon 97331 (United States)

2016-05-30

Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar{sup +} ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. The propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.

Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films

International Nuclear Information System (INIS)

Li, T. T.; Bayu Aji, L. B.; Heo, T. W.; Kucheyev, S. O.; Campbell, G. H.; Santala, M. K.

2016-01-01

Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar"+ ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. The propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.

Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

International Nuclear Information System (INIS)

Chang, Geng-Wei; Chang, Ting-Chang; Syu, Yong-En; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tu, Chun-Hao; Jian, Fu-Yen; Hung, Ya-Chi; Tai, Ya-Hsiang

2011-01-01

In this research, paraffin wax is employed as the passivation layer of the bottom gate amorphous indium–gallium–zinc oxide thin-film transistors (a-IGZO TFTs), and it is formed by sol–gel process in the atmosphere. The high yield and low cost passivation layer of sol–gel process technology has attracted much attention for current flat-panel-display manufacturing. Comparing with passivation-free a-IGZO TFTs, passivated devices exhibit a superior stability against positive gate bias stress in different ambient gas, demonstrating that paraffin wax shows gas-resisting characteristics for a-IGZO TFTs application. Furthermore, light-induced stretch-out phenomenon for paraffin wax passivated device is suppressed. This superior stability of the passivated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities.

Mössbauer spectroscopy study of surfactant sputtering induced Fe silicide formation on a Si surface

Energy Technology Data Exchange (ETDEWEB)

Beckmann, C.; Zhang, K. [2nd Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Hofsäss, H., E-mail: hans.hofsaess@phys.uni-goettingen.de [2nd Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Brüsewitz, C.; Vetter, U. [2nd Institute of Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Bharuth-Ram, K. [Physics Department, Durban University of Technology, Durban 4001 (South Africa)

2015-12-01

Highlights: • We study the formation of self-organized nanoscale dot and ripple patterns on Si. • Patterns are created by keV noble gas ion irradiation and simultaneous {sup 57}Fe co-deposition. • Ion-induced phase separation and the formation of a-FeSi{sub 2} is identified as relevant process. - Abstract: The formation of Fe silicides in surface ripple patterns, generated by erosion of a Si surface with keV Ar and Xe ions and simultaneous co-deposition of Fe, was investigated with conversion electron Mössbauer spectroscopy, atomic force microscopy and Rutherford backscattering spectrometry. For the dot and ripple patterns studied, we find an average Fe concentration in the irradiated layer between 6 and 25 at.%. The Mössbauer spectra clearly show evidence of the formation of Fe disilicides with Fe content close to 33 at.%, but very little evidence of the formation of metallic Fe particles. The results support the process of ion-induced phase separation toward an amorphous Fe disilicide phase as pattern generation mechanism. The observed amorphous phase is in agreement with thermodynamic calculations of amorphous Fe silicides.

Amorphous silicon as high index photonic material

Science.gov (United States)

Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.

2009-05-01

Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.

A literature review of surface alteration layer effects on waste glass behavior

International Nuclear Information System (INIS)

Feng, X.; Cunnane, J.C.; Bates, J.K.

1993-01-01

When in contact with an aqueous solution, nuclear waste glass is subject to a chemical attack that results in progressive alteration. During tills alteration, constituent elements of the glass pass into the solution; elements initially in solution diffuse into, or are adsorbed onto, the solid; and new phases appear. This results in the formation of surface layers on the reacted glass. The glass corrosion and radionuclide release can be better understood by investigating these surface layer effects. In the past decade, there have been numerous studies regarding the effects of surface layers on glass reactions. This paper presents a systematic analysis and summary of the past knowledge regarding the effects of surface layers on glass-water interaction. This paper describes the major formation mechanisms of surface layers; reviews the role of surface layers in controlling mass transport and glass reaction affinity (through crystalline phases, an amorphous silica, a gel layer, or all the components in the glass); and discusses how the surface layers contribute to the retention of radionuclides during glass dissolution

Advantages of using amorphous indium zinc oxide films for window layer in Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Warasawa, Moe [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Kaijo, Akira [Idemitsu Kosan Co., Ltd., 1280 Kami-izumi, Sodegaura, 229-0293 (Japan); Sugiyama, Mutsumi, E-mail: mutsumi@rs.noda.tus.ac.jp [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan)

2012-01-01

The advantages of using indium zinc oxide (IZO) films instead of conventional Ga-doped zinc oxide (ZnO:Ga) films for Cu(In,Ga)Se{sub 2} (CIGS) solar cells are described. The electrical properties of IZO are independent of film thickness. IZO films have higher mobility (30-40 cm{sup 2}/Vs) and lower resistivity (4-5 Multiplication-Sign 10{sup -4} {Omega} cm) compared to ZnO:Ga films deposited without intentional heating, because the number of grain boundaries in amorphous IZO films is small. The properties of a CIGS solar cell using IZO at the window layer were better than those obtained using a conventional ZnO:Ga at the window layer; moreover, the properties tended to be independent of thickness. These results indicate that use of IZO as a transparent conducting oxide layer is expected to increase the efficiency of CIGS solar cells.

Infrared Spectra and Band Strengths of Amorphous and Crystalline N2O

Science.gov (United States)

Hudson, R. L.; Loeffler, M. J.; Gerakines, P. A.

2017-01-01

Infrared transmission spectra from 4000 to 400 cm (exp -1), and associated band strengths and absorption coefficients, are presented for the first time for both amorphous and crystalline N2O. Changes in the spectra as a function of ice thickness and ice temperature are shown. New measurements of density, refractive index, and specific refraction are reported for amorphous and crystalline N2O. Comparisons are made to published results, and the most-likely reason for some recent disagreements in the literature is discussed. As with CO2, its isoelectronic congener, the formation of amorphous N2O is found to require greater care than the formation of amorphous solids from more-polar molecules.

Buried oxide layer in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Magnetoresistance in amorphous NdFeB/FeB compositionally modulated multilayers

International Nuclear Information System (INIS)

Peral, G.; Briones, F.; Vicent, J.L.

1991-01-01

Resistance measurements have been done in amorphous Nd 12 Fe 80 B 8 sputtered films and in amorphous sputtered Nd 26 Fe 68 B 6 /Fe 92 B 8 multilayers between 6 and 150 K with applied magnetic field parallel (LMR) and perpendicular (TMR) up to 7 T. The samples were grown by dc triode sputtering, with nominal unequal (2:1) layer thicknesses. The layered character of the samples have been tested by x-ray diffraction. Longitudinal magnetoresistance (LMR) is positive and transverse magnetoresistance (TMR) is negative. The magnetoresistance values are higher than in amorphous ferromagnets, and multilayering of these alloys produces much larger magnetoresistance values than either alloy alone and there is a strong dependence on the multilayer wavelength. The MR shows a weak temperature dependence in the temperature interval that was investigated

Fabrication of metallic nanomasks by transfer of self-organized nanodot patterns from semiconductor material into thin metallic layers

International Nuclear Information System (INIS)

Bobek, T.; Kurz, H.

2007-01-01

The basic understanding of the formation of highly regular nanostructures during ion erosion of amorphous GaSb layers is revised. The essential physical parameters for the formation of the highly regular dot pattern are discussed. Numerical modelling based on the stabilized isotropic Kuramoto-Sivashinsky equation is presented and discussed. The experimental part of this contribution presents the successful pattern transfer into metallic buried thin layers as well as into Silicon underlayers. The critical conditions for this transfer technique are discussed. Application potential of using this self-organization scheme for the generation of highly regular patterns in ferromagnetic metal layers as well as in crystalline silicon is estimated

Operating method of amorphous thin film semiconductor element

Energy Technology Data Exchange (ETDEWEB)

Mori, Koshiro; Ono, Masaharu; Hanabusa, Akira; Osawa, Michio; Arita, Takashi

1988-05-31

The existing technologies concerning amorphous thin film semiconductor elements are the technologies concerning the formation of either a thin film transistor or an amorphous Si solar cell on a substrate. In order to drive a thin film transistor for electronic equipment control by the output power of an amorphous Si solar cell, it has been obliged to drive the transistor weth an amorphous solar cell which was formed on a substrate different from that for the transistor. Accordingly, the space for the amorphous solar cell, which was formed on the different substrate, was additionally needed on the substrate for the thin film transistor. In order to solve the above problem, this invention proposes an operating method of an amorphous thin film semiconductor element that after forming an amorphous Si solar cell through lamination on the insulation coating film which covers the thin film transistor formed on the substrate, the thin film transistor is driven by the output power of this solar cell. The invention eliminates the above superfluous space and reduces the size of the amorphous thin film semiconductor element including the electric source. (3 figs)

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

Science.gov (United States)

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-03

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

Miscibility of amorphous ZrO2-Al2O3 binary alloy

Science.gov (United States)

Zhao, C.; Richard, O.; Bender, H.; Caymax, M.; De Gendt, S.; Heyns, M.; Young, E.; Roebben, G.; Van Der Biest, O.; Haukka, S.

2002-04-01

Miscibility is a key factor for maintaining the homogeneity of the amorphous structure in a ZrO2-Al2O3 binary alloy high-k dielectric layer. In the present work, a ZrO2/Al2O3 laminate thin layer has been prepared by atomic layer chemical vapor deposition on a Si (100) wafer. This layer, with artificially induced inhomogeneity (lamination), enables one to study the change in homogeneity of the amorphous phase in the ZrO2/Al2O3 system during annealing. High temperature grazing incidence x-ray diffraction (HT-XRD) was used to investigate the change in intensity of the constructive interference peak of the x-ray beams which are reflected from the interfaces of ZrO2/Al2O3 laminae. The HT-XRD spectra show that the intensity of the peak decreases with an increase in the anneal temperature, and at 800 °C, the peak disappears. The same samples were annealed by a rapid thermal process (RTP) at temperatures between 700 and 1000 °C for 60 s. Room temperature XRD of the RTP annealed samples shows a similar decrease in peak intensity. Transmission electronic microscope images confirm that the laminate structure is destroyed by RTP anneals and, just below the crystallization onset temperature, a homogeneous amorphous ZrAlxOy phase forms. The results demonstrate that the two artificially separated phases, ZrO2 and Al2O3 laminae, tend to mix into a homogeneous amorphous phase before crystallization. This observation indicates that the thermal stability of ZrO2-Al2O3 amorphous phase is suitable for high-k applications.

Amorphous silicon oxide layers for surface passivation and contacting of heterostructure solar cells of amorphous and crystalline silicon; Amorphe Siliziumoxidschichten zur Oberflaechenpassivierung und Kontaktierung von Heterostruktur-Solarzellen aus amorphen und kristallinem Silizium

Energy Technology Data Exchange (ETDEWEB)

Einsele, Florian

2010-02-05

Atomic hydrogen plays a dominant role in the passivation of crystalline silicon surfaces by layers of amorphous silicon. In order to research into this role, this thesis presents the method of hydrogen effusion from thin amorphous films of silicon (a-Si:H) and silicon oxide (a-SiO{sub x}:H). The oxygen concentration of the sub-stoichiometric a-SiO{sub x}:H films ranges up to 10 at.-%. The effusion experiment yields information about the content and thermal stability of hydrogen and about the microstructure of the films. A mathematical description of the diffusion process of atomic hydrogen yields an analytical expression of the effusion rate R{sub E} depending on the linearly increasing temperature in the experiment. Fitting of the calculated effusion rates R{sub E} to measured effusion spectra yields the diffusion coefficient of atomic hydrogen in a-SiO{sub x}:H. With increasing oxygen concentration, the diffusion coefficient of hydrogen in the a-SiO{sub x}:H films decreases. This is attributed to an increasing Si-H bond energy due to back bonded oxygen, resulting in a higher stability of hydrogen in the films. This result is confirmed by an increasing thermal stability of the p-type c-Si passivation with a-SiO{sub x}:H of increasing oxygen concentrations up to 5 at.-%. The passivation reaches very low recombination velocities of S < 10 cm/s at the interface. However, for higher oxygen concentrations up to 10 at.-%, the passivation quality decreases significantly. Here, infrared spectroscopy of Si-H vibrational modes and hydrogen effusion show an increase of hydrogen-rich interconnected voids in the films. This microstructure results in a high amount of molecular hydrogen (H{sub 2}) in the layers, which is not suitable for the saturation of c-Si interface defects. Annealing of the films at temperatures around 400 C leads to a release of H{sub 2} from the voids, as a result of which Si-Si bonds in the material reconstruct. Subsequently, hydrogen migration in the

Structural morphology of amorphous conducting carbon film

Indian Academy of Sciences (India)

Unknown

moves from low preparation temperature to high preparation temperature. The amorphous .... nm and the interac- tion between the pi-electron clouds of the two layers re- .... sp2 configuration forms to minimize stress and making. C900 films ...

Magnetotransport in spin-valve systems with amorphous magnetic and superconducting partial layers; Magnetotransport in Spinventil-Systemen mit amorphen magnetischen und supraleitenden Teilschichten

Energy Technology Data Exchange (ETDEWEB)

Steiner, Roland Johannes

2006-04-27

The first part of this work deals with the fabrication and characterisation of spin valves with an amorphous FeB layer acting as a weak ferromagnet embedded into the structure. In the second part of this work ferromagnet/superconductor hybrid structures are fabricated and the relevant magnetic field dependent transport phenomena are analyzed. The interlayer of a conventional spin valve was replaced by a superconducting niobium layer. Small applied fields close to the coercivity field of the involved ferromagnets - and thus far below the critical magnetic field of the superconductor - affected the critical temperature of the niobium layer. Measurements of the field dependent resistance and the critical temperature of a FM/SC/FMsystem showed a local maximum in the T{sub c}(H)- and the R(H)-curve. (orig.)

Water Transfer Characteristics during Methane Hydrate Formation Processes in Layered Media

Directory of Open Access Journals (Sweden)

Yousheng Deng

2011-08-01

Full Text Available Gas hydrate formation processes in porous media are always accompanied by water transfer. To study the transfer characteristics comprehensively, two kinds of layered media consisting of coarse sand and loess were used to form methane hydrate in them. An apparatus with three PF-meter sensors detecting water content and temperature changes in media during the formation processes was applied to study the water transfer characteristics. It was experimentally observed that the hydrate formation configurations in different layered media were similar; however, the water transfer characteristics and water conversion ratios were different.

Amorphous-crystalline interface evolution during Solid Phase Epitaxy Regrowth of SiGe films amorphized by ion implantation

International Nuclear Information System (INIS)

D'Angelo, D.; Piro, A.M.; Mirabella, S.; Bongiorno, C.; Romano, L.; Terrasi, A.; Grimaldi, M.G.

2007-01-01

Transmission Electron Microscopy was combined with Time Resolved Reflectivity to study the amorphous-crystalline (a-c) interface evolution during Solid Phase Epitaxy Regrowth (SPER) of Si 0.83 Ge 0.17 films deposited on Si by Molecular Beam Epitaxy and amorphized with Ge + ion implantation. Starting from the Si/SiGe interface, a 20 nm thick layer regrows free of defects with the same SPER rate of pure Si. The remaining SiGe regrows with planar defects and dislocations, accompanied by a decrease of the SPER velocity. The sample was also studied after implantation with B or P. In these cases, the SPER rate raises following the doping concentration profile, but no difference in the defect-free layer thickness was observed compared to the un-implanted sample. On the other hand, B or P introduction reduces the a-c interface roughness, while B-P co-implantation produces roughness comparable to the un-implanted sample

Excessively High Vapor Pressure of Al-based Amorphous Alloys

Directory of Open Access Journals (Sweden)

Jae Im Jeong

2015-10-01

Full Text Available Aluminum-based amorphous alloys exhibited an abnormally high vapor pressure at their approximate glass transition temperatures. The vapor pressure was confirmed by the formation of Al nanocrystallites from condensation, which was attributed to weight loss of the amorphous alloys. The amount of weight loss varied with the amorphous alloy compositions and was inversely proportional to their glass-forming ability. The vapor pressure of the amorphous alloys around 573 K was close to the vapor pressure of crystalline Al near its melting temperature, 873 K. Our results strongly suggest the possibility of fabricating nanocrystallites or thin films by evaporation at low temperatures.

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes.

Science.gov (United States)

Hu, Shiben; Ning, Honglong; Lu, Kuankuan; Fang, Zhiqiang; Li, Yuzhi; Yao, Rihui; Xu, Miao; Wang, Lei; Peng, Junbiao; Lu, Xubing

2018-03-27

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al 2 O 3 ) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al 2 O 3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al 2 O 3 PVL exhibited remarkable mobility of 33.5-220.1 cm 2 /Vs when channel length varies from 60 to 560 μ m. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously.

Solid solution and amorphous phase in Ti–Nb–Ta–Mn systems synthesized by mechanical alloying

Energy Technology Data Exchange (ETDEWEB)

Aguilar, C., E-mail: claudio.aguilar@usm.cl [Departamento de Ingeniería Metalúrgica y Materiales, Universidad Técnica Federico Santa María, Av. España 1680, Valparaíso (Chile); Guzman, P. [Departamento de Ingeniería Metalúrgica y Materiales, Universidad Técnica Federico Santa María, Av. España 1680, Valparaíso (Chile); Lascano, S. [Departamento de Ingeniería Mecánica, Universidad Técnica Federico Santa María, Av. España 1680, Valparaíso (Chile); Parra, C. [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaíso (Chile); Bejar, L. [Instituto de Investigaciones Metalúrgicas, Universidad Michoacana de San Nicolás de Hidalgo, Ciudad Universitaria, Morelia C.P. 58000, Michoacán (Mexico); Medina, A. [Facultad de Ingeniería Mecánica, Universidad Michoacana de San Nicolás de Hidalgo, Ciudad Universitaria, C.P. 58000, Michoacán (Mexico); Guzman, D. [Departamento de Metalurgia, Universidad de Atacama, Av. España 485, Copiapó (Chile)

2016-06-15

This work discusses the formation of Ti–30Nb–13Ta–xMn (x: 2, 4 and 6 wt%) solid solution by mechanical alloying using a shaker mill. A solid solution was formed after 15 h of milling and an amorphous phase was formed after 30 h of milling, according to X-ray diffraction results. Disappearance of strongest X-ray diffraction peaks of Nb, Ta and Mn indicated the formation of solid solution, while, X-ray diffraction patterns of powders milled for 30 h showed an amorphous hump with crystalline peaks in the angular range of 35–45° in 2θ. TEM image analysis showed the presence of nanocrystalline intermetallic compounds embedded in an amorphous matrix. Mn{sub 2}Ti, MnTi and NbTi{sub 4} intermetallic compounds were detected and revealed crystallites with size ranging from 3 to 20 nm. The Gibbs free energy for the formation of solid solution and amorphous phase of three ternary systems (Ti–Nb–Ta, Ti–Nb–Mn and Ti–Ta–Mn) was calculated using extended Miedema's model. Experimental and thermodynamic data confirmed that solid solution was first formed in the alloy with 6wt% Mn followed by the formation of an amorphous phase as milling time increases. The presence of Mn promoted the formation of amorphous phase because the atomic radius difference between Mn with Ti, Nb and Ta. - Highlights: • Thermodynamics analysis of extension of solid solution of the Ti–Nb–Ta–Mn system. • Formation of amorphous phase and intermetallic compounds were observed. • Nanocrystalline intermetallic compounds were formed with the sizes between 3 and 20 nm.

Amorphous Pd-assisted H 2 detection of ZnO nanorod gas sensor with enhanced sensitivity and stability

KAUST Repository

Kim, Hyeonghun

2018-02-05

For monitoring H2 concentrations in air, diverse resistive gas sensors have been demonstrated. In particular, Pd-decorated metal oxides have shown remarkable selectivity and sensing response for H2 detection. In this work, H2 sensing behavior of amorphous Pd layer covering ZnO nanorods (am-Pd/ZnO NRs) is investigated. This is the first report on the enhanced gas sensing performance attained by using an amorphous metal layer. The amorphous Pd layer is generated by reduction reaction with a strong reducing agent (NaBH4), and it covers the ZnO nanorods completely with a thickness of 2 ∼ 5 nm. For comparison, crystalline Pd nanoparticles-decorated ZnO nanorods (c-Pd/ZnO NRs) are produced using a milder reducing agent like hydrazine. Comparing the c-Pd/ZnO NRs sensor and other previously reported hydrogen sensors based on the crystalline Pd and metal oxides, the am-Pd/ZnO NRs sensor exhibits a remarkable sensing response (12,400% at 2% H2). The enhancement is attributed to complete cover of the amorphous Pd layer on the ZnO NRs, inducing larger interfaces between the Pd and ZnO. In addition, the amorphous Pd layer prevents surface contamination of the ZnO NRs. Therefore, the am-Pd/ZnO NRs sensor maintains initial sensing performance even after 5 months.

Amorphous Pd-assisted H 2 detection of ZnO nanorod gas sensor with enhanced sensitivity and stability

KAUST Repository

Kim, Hyeonghun; Pak, Yusin; Jeong, Yeonggyo; Kim, Woochul; Kim, Jeongnam; Jung, Gun Young

2018-01-01

For monitoring H2 concentrations in air, diverse resistive gas sensors have been demonstrated. In particular, Pd-decorated metal oxides have shown remarkable selectivity and sensing response for H2 detection. In this work, H2 sensing behavior of amorphous Pd layer covering ZnO nanorods (am-Pd/ZnO NRs) is investigated. This is the first report on the enhanced gas sensing performance attained by using an amorphous metal layer. The amorphous Pd layer is generated by reduction reaction with a strong reducing agent (NaBH4), and it covers the ZnO nanorods completely with a thickness of 2 ∼ 5 nm. For comparison, crystalline Pd nanoparticles-decorated ZnO nanorods (c-Pd/ZnO NRs) are produced using a milder reducing agent like hydrazine. Comparing the c-Pd/ZnO NRs sensor and other previously reported hydrogen sensors based on the crystalline Pd and metal oxides, the am-Pd/ZnO NRs sensor exhibits a remarkable sensing response (12,400% at 2% H2). The enhancement is attributed to complete cover of the amorphous Pd layer on the ZnO NRs, inducing larger interfaces between the Pd and ZnO. In addition, the amorphous Pd layer prevents surface contamination of the ZnO NRs. Therefore, the am-Pd/ZnO NRs sensor maintains initial sensing performance even after 5 months.

Corrosion resistance of amorphous NiCrZr and NiCrMoZr alloys

International Nuclear Information System (INIS)

Naka, M.; Miyake, M.; Okamoto, I.

1987-01-01

One of the authors has reported that the corrosion resistance of chromium containing amorphous alloys is extremely improved by alloying phosphorus among metalloids. Two factors operate for the improvement of corrosion resistance of the amorphous alloys. First, phosphorus serves for the rapid formation of protective passive film. Second, the compositional and structural homogeneity in amorphous state also account for the formation of protective film. The latter factor has been clearly seen in the high corrosion resistance of CoCrMoZr and CoCrWZr alloys without metalloids. In order to clarify the separately two factors in the corrosion resistance of amorphous alloys, the corrosion resistance of amorphous alloys without metalloids has to be further investigated. This paper also deals with the corrosion resistance and electrochemical behavior of NiCrZr and NiCrMoZr alloys in 1N HCl, and compare them with the corrosion behavior of the crystalline alloys containing the same composition as that of the amorphous alloys

Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

International Nuclear Information System (INIS)

Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin

2014-01-01

High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles

Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin, E-mail: mohajer@ut.ac.ir [Thin Film and Nanoelectronics Lab, Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 143957131 (Iran, Islamic Republic of)

2014-11-10

High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles.

Kinetically Controlled Two-Step Amorphization and Amorphous-Amorphous Transition in Ice

Science.gov (United States)

Lin, Chuanlong; Yong, Xue; Tse, John S.; Smith, Jesse S.; Sinogeikin, Stanislav V.; Kenney-Benson, Curtis; Shen, Guoyin

2017-09-01

We report the results of in situ structural characterization of the amorphization of crystalline ice Ih under compression and the relaxation of high-density amorphous (HDA) ice under decompression at temperatures between 96 and 160 K by synchrotron x-ray diffraction. The results show that ice Ih transforms to an intermediate crystalline phase at 100 K prior to complete amorphization, which is supported by molecular dynamics calculations. The phase transition pathways show clear temperature dependence: direct amorphization without an intermediate phase is observed at 133 K, while at 145 K a direct Ih-to-IX transformation is observed; decompression of HDA shows a transition to low-density amorphous ice at 96 K and ˜1 Pa , to ice Ic at 135 K and to ice IX at 145 K. These observations show that the amorphization of compressed ice Ih and the recrystallization of decompressed HDA are strongly dependent on temperature and controlled by kinetic barriers. Pressure-induced amorphous ice is an intermediate state in the phase transition from the connected H-bond water network in low pressure ices to the independent and interpenetrating H-bond network of high-pressure ices.

Effect of Annealed Oxides on the Formation of Inhibition Layer During Hot-Dip Galvanizing of 590Mpa Trip Steel

Energy Technology Data Exchange (ETDEWEB)

Kim, Seong Hwan; Huh, Joo Youl [Korea University, Seoul (Korea, Republic of); Lee, Suk Kyu; Park, Rho Bum; Kim, Jong Sang [POSCO Technical Research Laboratories, Gwangyang (Korea, Republic of)

2011-02-15

The selective surface oxidation of a transformation-induced-plasticity (TRIP) steel containing 1.6 wt.% Mn and 1.5 wt.% Si during annealing at 800 .deg. C was investigated for its influence on the formation of an inhibition layer during hot-dip galvanizing. The selective oxidation of the alloying elements and the oxide morphology were significantly influenced by the annealing atmosphere. The pure N{sub 2} atmosphere with a dew point -40 .deg. C promoted the selective oxidation of Mn as a crystalline Mn{sub 2}SiO{sub 4} phase, whereas the N{sub 2} + 10% H{sub 2} atmosphere with the same dew point -40 .deg. C promoted the selective oxidation of Si as an amorphous Si-rich oxide phase. During hot-dip galvanizing, the Mn{sub 2}SiO{sub 4} phase was reduced more readily by Al in the Zn bath than the Si-rich oxide phase. Consequently, the pure N{sub 2} atmosphere resulted in a higher formation rate of Fe{sub 2}Al{sub 5} particles at the Zn/steel interface and better galvanizability than the N{sub 2} + 10% H{sub 2} atmosphere.

PDF analysis on re-crystallized structure from amorphous BiT

Energy Technology Data Exchange (ETDEWEB)

Yoneda, Yasuhiro [Japan Atomic Energy Research Institute, Synchrotron Radiation Research Center, Kouto 1-1-1, Mikazuki-cho, Sayo-gun, Hyogo 679-5148 (Japan)]. E-mail: yoneda@spring8.or.jp; Kohara, Shinji [Synchrotron Radiation Research Laboratory, Japan Synchrotron Radiation, Research Institute, Kouto 1-1-1, Mikazuki-cho, Sayo-gun, Hyogo 679-5198 (Japan); Hamazaki, Shin' ichi [Department of Electronics, Iwaki Meisei University, Iino 5-5-1, Chuohdai, Fukushima 970-8551 (Japan); Takashige, Masaaki [Department of Electronics, Iwaki Meisei University, Iino 5-5-1, Chuohdai, Fukushima 970-8551 (Japan); Mizuki, Jun' ichiro [Japan Atomic Energy Research Institute, Synchrotron Radiation Research Center, Kouto 1-1-1, Mikazuki-cho, Sayo-gun, Hyogo 679-5148 (Japan)

2005-08-15

A glass sample of composition Bi{sub 4}Ti{sub 3}O{sub 12} was prepared by rapid quenching. The as-quenched sample was confirmed to be amorphous by synchrotron X-ray measurements. The crystallization process of the amorphous sample was also investigated by high-energy X-ray diffraction and by atomic pair distribution function analysis. The perovskite layer in the crystal Bi{sub 4}Ti{sub 3}O{sub 12} is transformed to a pyrochlore structure in the amorphous sample. The amorphous sample first crystallized to a metastable phase by acquiring long-range ordering of the pyrochlore structure at T {sub cryst1}, and then secondary crystallized into a reverted Bi{sub 4}Ti{sub 3}O{sub 12} structure at T {sub cryst2}.

Reversibility of temperature driven discrete layer-by-layer formation of dioctyl-benzothieno-benzothiophene films.

Science.gov (United States)

Dohr, M; Ehmann, H M A; Jones, A O F; Salzmann, I; Shen, Q; Teichert, C; Ruzié, C; Schweicher, G; Geerts, Y H; Resel, R; Sferrazza, M; Werzer, O

2017-03-22

Film forming properties of semiconducting organic molecules comprising alkyl-chains combined with an aromatic unit have a decisive impact on possible applications in organic electronics. In particular, knowledge on the film formation process in terms of wetting or dewetting, and the precise control of these processes, is of high importance. In the present work, the subtle effect of temperature on the morphology and structure of dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) films deposited on silica surfaces by spin coating is investigated in situ via X-ray diffraction techniques and atomic force microscopy. Depending on temperature, bulk C8-BTBT exhibits a crystalline, a smectic A and an isotropic phase. Heating of thin C8-BTBT layers at temperatures below the smectic phase transition temperature leads to a strong dewetting of the films. Upon approaching the smectic phase transition, the molecules start to rewet the surface in the form of discrete monolayers with a defined number of monolayers being present at a given temperature. The wetting process and layer formation is well defined and thermally stable at a given temperature. On cooling the reverse effect is observed and dewetting occurs. This demonstrates the full reversibility of the film formation behavior and reveals that the layering process is defined by an equilibrium thermodynamic state, rather than by kinetic effects.

Formation mechanism for the nanoscale amorphous interface in pulse-welded Al/Fe bimetallic systems

International Nuclear Information System (INIS)

Li, Jingjing; Yu, Qian; Zhang, Zijiao; Xu, Wei; Sun, Xin

2016-01-01

Pulse or impact welding traditionally has been referred to as “solid-state” welding. By integrating advanced interface characterizations and diffusion calculations, we report that the nanoscale amorphous interface in the pulse-welded Al/Fe bimetallic system is formed by rapid heating and melting of a thin Al layer at the interface, diffusion of iron atoms in the liquid aluminum, and subsequent rapid quenching with diffused iron atoms in solution. This finding challenges the commonly held belief regarding the solid-state nature of the impact-based welding process for dissimilar metals. Elongated ultra-fine grains with high dislocation density and ultra-fine equiaxed grains also are observed in the weld interface vicinity on the steel and aluminum sides, respectively, which further confirms that melting and the subsequent recrystallization occurred on the aluminum side of the interface.

Formation mechanism for the nanoscale amorphous interface in pulse-welded Al/Fe bimetallic systems

Energy Technology Data Exchange (ETDEWEB)

Li, Jingjing [Department of Mechanical Engineering, The University of Hawaii at Manoa, Honolulu, Hawaii 96822 (United States); Yu, Qian; Zhang, Zijiao [Department of Materials Science and Engineering, Center for Electron Microscope, Zhejiang University, Hangzhou 310027 (China); Xu, Wei; Sun, Xin, E-mail: xin.sun@pnnl.gov [Pacific Northwest National Laboratory, Richland, Washington 99354 (United States)

2016-05-16

Pulse or impact welding traditionally has been referred to as “solid-state” welding. By integrating advanced interface characterizations and diffusion calculations, we report that the nanoscale amorphous interface in the pulse-welded Al/Fe bimetallic system is formed by rapid heating and melting of a thin Al layer at the interface, diffusion of iron atoms in the liquid aluminum, and subsequent rapid quenching with diffused iron atoms in solution. This finding challenges the commonly held belief regarding the solid-state nature of the impact-based welding process for dissimilar metals. Elongated ultra-fine grains with high dislocation density and ultra-fine equiaxed grains also are observed in the weld interface vicinity on the steel and aluminum sides, respectively, which further confirms that melting and the subsequent recrystallization occurred on the aluminum side of the interface.

Surface-Activated Amorphous Alloy Fuel Electrodes for Methanol Fuel Cell

OpenAIRE

Asahi, Kawashima; Koji, Hashimoto; The Research Institute for Iron, Steel and Other Metals; The Research Institute for Iron, Steel and Other Metals

1983-01-01

Amorphous alloy electrodes for electrochemical oxidation of methanol and its derivatives were obtained by the surface activation treatment consisting of electrodeposition of zinc on as-quenched amorphous alloy substrates, heating at 200-300℃ for 30 min, and subsequently leaching of zinc in an alkaline solution. The surface activation treatment provided a new method for the preparation of a large surface area on the amorphous alloys. The best result for oxidation of methanol, sodium formate an...

Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process.

Science.gov (United States)

Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong-Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Hyun Jae

2017-11-24

We report low-temperature solution processing of hafnium oxide (HfO 2 ) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl 4 ) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO 2 film. The fabricated HfO 2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf 4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO 2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

Amorphous and nanocrystalline phase formation in highly-driven Al-based binary alloys

Energy Technology Data Exchange (ETDEWEB)

Kalay, Yunus Eren [Iowa State Univ., Ames, IA (United States)

2009-01-01

Remarkable advances have been made since rapid solidification was first introduced to the field of materials science and technology. New types of materials such as amorphous alloys and nanostructure materials have been developed as a result of rapid solidification techniques. While these advances are, in many respects, ground breaking, much remains to be discerned concerning the fundamental relationships that exist between a liquid and a rapidly solidified solid. The scope of the current dissertation involves an extensive set of experimental, analytical, and computational studies designed to increase the overall understanding of morphological selection, phase competition, and structural hierarchy that occurs under far-from equilibrium conditions. High pressure gas atomization and Cu-block melt-spinning are the two different rapid solidification techniques applied in this study. The research is mainly focused on Al-Si and Al-Sm alloy systems. Silicon and samarium produce different, yet favorable, systems for exploration when alloyed with aluminum under far-from equilibrium conditions. One of the main differences comes from the positions of their respective T₀ curves, which makes Al-Si a good candidate for solubility extension while the plunging T₀ line in Al-Sm promotes glass formation. The rapidly solidified gas-atomized Al-Si powders within a composition range of 15 to 50 wt% Si are examined using scanning and transmission electron microscopy. The non-equilibrium partitioning and morphological selection observed by examining powders at different size classes are described via a microstructure map. The interface velocities and the amount of undercooling present in the powders are estimated from measured eutectic spacings based on Jackson-Hunt (JH) and Trivedi-Magnin-Kurz (TMK) models, which permit a direct comparison of theoretical predictions. For an average particle size of 10 {micro}m with a Peclet number of ~0.2, JH and TMK deviate from

Hydrogen blister formation on cold-worked tungsten with layered structure

International Nuclear Information System (INIS)

Nishijima, Dai; Sugimoto, Takanori; Takamura, Shuichi; Ye, Minyou; Ohno, Noriyasu

2005-01-01

Low-energy ( 10 21 m -2 s -1 ) hydrogen plasma exposures were performed on cold-worked powder metallurgy tungsten (PM-W), recrystallized cold-worked PM-W and hot-worked PM-W. Large blisters with a diameter of approximately 100-200 μm were observed only on the surface of cold-worked PM-W. The blister formation mechanism has not been clarified thus far. PM-W has a consisting of 1-μm-thick layers, which is formed by press-roll processing. A detailed observation of the cross section of those blisters shows for the first time that the blisters are formed by cleaving the upper layer along the stratified layer. These experimental results indicate that the manufacturing process of tungsten material is one of the key factors for blister formation on the tungsten surface. (author)

Fabrication of C60/amorphous carbon superlattice structures

International Nuclear Information System (INIS)

Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

2001-01-01

The nitrogen doping effects in C 60 films by RF plasma source was investigated, and it was found that the nitrogen ion bombardment broke up C 60 molecules and changed them into amorphous carbon. Based on these results, formation of C 60 /amorphous carbon superlattice structure was proposed. The periodic structure of the resulted films was confirmed by XRD measurements, as the preliminary results of fabrication of the superlattice structure

Textured strontium titanate layers on platinum by atomic layer deposition

International Nuclear Information System (INIS)

Blomberg, T.; Anttila, J.; Haukka, S.; Tuominen, M.; Lukosius, M.; Wenger, Ch.; Saukkonen, T.

2012-01-01

Formation of textured strontium titanate (STO) layers with large lateral grain size (0.2–1 μm) and low X-ray reflectivity roughness (∼ 1.36 nm) on Pt electrodes by industry proven atomic layer deposition (ALD) method is demonstrated. Sr(t-Bu 3 Cp) 2 , Ti(OMe) 4 and O 3 precursors at 250 °C were used to deposit Sr rich STO on Pt/Ti/SiO 2 /Si ∅200 mm substrates. After crystallization post deposition annealing at 600 °C in air, most of the STO grains showed a preferential orientation of the {001} plane parallel to the substrate surface, although other orientations were also present. Cross sectional and plan view transmission electron microscopy and electron diffraction analysis revealed more than an order of magnitude larger lateral grain sizes for the STO compared to the underlying multicrystalline {111} oriented platinum electrode. The combination of platinum bottom electrodes with ALD STO(O 3 ) shows a promising path towards the formation of single oriented STO film. - Highlights: ► Amorphous strontium titanate (STO) on platinum formed a textured film after annealing. ► Single crystal domains in 60 nm STO film were 0.2–1 μm wide. ► Most STO grains were {001} oriented.

Control of single-electron charging of metallic nanoparticles onto amorphous silicon surface.

Science.gov (United States)

Weis, Martin; Gmucová, Katarína; Nádazdy, Vojtech; Capek, Ignác; Satka, Alexander; Kopáni, Martin; Cirák, Július; Majková, Eva

2008-11-01

Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film is reported. Single-electron charging (so-called quantized double-layer charging) of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the electric field in the surface region induced by the excess of negative/positive charged defect states in the amorphous silicon layer. The particular charge states in amorphous silicon are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. The influence of charged states on the electric field in the surface region is evaluated by the finite element method. The single-electron charging is analyzed by the standard quantized double layer model as well as two weak-link junctions model. Both approaches are in accordance with experiment and confirm single-electron charging by tunnelling process at room temperature. This experiment illustrates the possibility of the creation of a voltage-controlled capacitor for nanotechnology.

Facile synthesis of highly efficient amorphous Mn-MIL-100 catalysts: The formation mechanism and the structure changes during the application for CO oxidation.

Science.gov (United States)

Zhang, Xiaodong; Li, Hongxin; Lv, Xutian; Xu, Jingcheng; Wang, Yuxin; He, Chi; Liu, Ning; Yang, Yiqiong; Wang, Yin

2018-04-13

A comprehensive study was carried out on amorphous metal-organic frameworks Mn-MIL-100 as efficient catalysts towards CO oxidation. This study focuses on explaining the crystalline-amorphous-crystalline transformations during thermolysis process of Mn-MIL-100 and studying the structure changes during the reaction process for CO oxidation. A possible formation mechanism of amorphous Mn-MIL-100 was proposed. Amorphous Mn-MIL-100 obtained by calcination at 250°C (a-Mn-250) showed a smaller specific surface area (4 m2/g), but displayed a high catalytic activity. Furthermore, the structure of amorphous Mn-MIL-100 was labile during the reaction process. When used a-Mn-250 were treated with reaction atmosphere at high temperature (named used a-Mn-250-S), the amorphous catalysts transformed to Mn2O3. Meanwhile, BET surface area (164 m2/g) and the catalytic performance both sharply increased. In addition, used a-Mn-250-S catalyst transformed from Mn2O3 to Mn3O4, resulting in the slightly decrease of catalytic activity under the presence of 1 vol% water vapor in the stream. A schematic of the structure changes during the reaction process was proposed. The achievement of our synthesis relies on the increase of BET surface area using CO as retreatment atmosphere, and the enhanced catalytic activity was attributed to the unique structure, a high quantity of surface active oxygen species, oxygen vacancies and good low temperature reduction behavior. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical features of an amorphous indium-gallium-zinc-oxide film transistor using a double active matrix with different oxygen contents

International Nuclear Information System (INIS)

Koo, Ja Hyun; Kang, Tae Sung; Hong, Jin Pyo

2012-01-01

The electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFTs) are systematically studied using a double a-IGZO active layer that is composed of a-IGZO x (oxygen-ion-poor region) and a-IGZO y (oxygen-ion-rich-region). An active layer is designed to have a serially-stacked bi-layer matrix with different oxygen contents, providing the formation of different electron conduction channels. Two different oxygen contents in the active layer are obtained by varying the O 2 partial pressure during sputtering. The a-IGZO TFT based on a double active layer exhibits a high mobility of 9.1 cm 2 /Vsec, a threshold voltage (V T ) of 16.5 V, and ΔV T shifts of less than 1.5 V under gate voltage stress. A possible electrical sketch for the double active layer channel is also discussed.

Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition.

Science.gov (United States)

Gwon, Taehong; Mohamed, Ahmed Yousef; Yoo, Chanyoung; Park, Eui-Sang; Kim, Sanggyun; Yoo, Sijung; Lee, Han-Koo; Cho, Deok-Yong; Hwang, Cheol Seong

2017-11-29

The local bonding structures of Ge x Te 1-x (x = 0.5, 0.6, and 0.7) films prepared through atomic layer deposition (ALD) with Ge(N(Si(CH 3 ) 3 ) 2 ) 2 and ((CH 3 ) 3 Si) 2 Te precursors were investigated using Ge K-edge X-ray absorption spectroscopy (XAS). The results of the X-ray absorption fine structure analyses show that for all of the compositions, the as-grown films were amorphous with a tetrahedral Ge coordination of a mixture of Ge-Te and Ge-Ge bonds but without any signature of Ge-GeTe decomposition. The compositional evolution in the valence band electronic structures probed through X-ray photoelectron spectroscopy suggests a substantial chemical influence of additional Ge on the nonstoichiometric GeTe. This implies that the ALD process can stabilize Ge-abundant bonding networks like -Te-Ge-Ge-Te- in amorphous GeTe. Meanwhile, the XAS results on the Ge-rich films that had undergone post-deposition annealing at 350 °C show that the parts of the crystalline Ge-rich GeTe became separated into Ge crystallites and rhombohedral GeTe in accordance with the bulk phase diagram, whereas the disordered GeTe domains still remained, consistent with the observations of transmission electron microscopy and Raman spectroscopy. Therefore, amorphousness in GeTe may be essential for the nonsegregated Ge-rich phases and the low growth temperature of the ALD enables the achievement of the structurally metastable phases.

Amorphization and recrystallization processes in monocrystalline beta silicon carbide thin films

International Nuclear Information System (INIS)

Edmond, J.A.; Withrow, S.P.; Kong, H.S.; Davis, R.F.

1985-01-01

Individual, as well as multiple doses of 27 Al + , 31 P + , 28 Si + , and 28 Si + and 12 C + , were implanted into (100) oriented monocrystalline β-SiC films. The critical energy of approx. =16 eV/atom required for the amorphization of β-SiC via implantation of 27 Al + and 31 P + was determined using the TRIM84 computer program for calculation of the damage-energy profiles coupled with the results of RBS/ion channeling analyses. In order to recrystallize amorphized layers created by the individual implantation of all four ion species, thermal annealing at 1600, 1700, or 1800 0 C was employed. Characterization of the recrystallized layers was performed using XTEM. Examples of SPE regrown layers containing precipitates and dislocation loops, highly faulted-microtwinned regions, and random crystallites were observed

Electron spectroscopy of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In4Se3 crystals

International Nuclear Information System (INIS)

Galiy, P.V.; Musyanovych, A.V.; Nenchuk, T.M.

2005-01-01

The results of the quantitative X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In 4 Se 3 crystals are presented. The carbon coating formation occurs as the result of interaction of the air and residual gases atmosphere in ultra high vacuum (UHV) Auger spectrometer chamber with atomic clean interlayer cleavage surfaces of the crystals. The kinetics and peculiarities of interfacial carbon layer formation on the cleavage surfaces of the crystals, elemental and phase composition of the interface have been studied by quantitative XPS, AES and mass-spectroscopy

Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

Energy Technology Data Exchange (ETDEWEB)

Li, Haofeng; Brouillet, Jeremy; Wang, Xiaoxin; Liu, Jifeng, E-mail: Jifeng.Liu@dartmouth.edu [Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755 (United States)

2014-11-17

We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450 °C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18 μm long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

Amorphous semiconductors for particle detection: Physical and technical limits and possibilities

International Nuclear Information System (INIS)

Equer, B.; Karar, A.

1989-01-01

Amorphous silicon is used, at an industrial level, in at least three different fields of application: photovoltaic cells, flat TV screens and line scanners for image processing. In the last two cases, thin film transistors (TFT) are produced with the same technology. Particle detection with amorphous silicon has been demonstrated, but present performances are limited to ionizing particles. In this paper, we discuss the physical basis of amorphous semiconductors and the possible future development that can be expected on the basis of the existing technology. It is concluded that substitution of amorphous for crystalline silicon brings no clear advantage, if possible at all. Positive assets are to be found in using specific properties of thin layers: large area structures like arrays of photodiodes with associated readout are in the state of the art; vertical structures alternating layers of differently doped materials and/or of different semiconductors can be produced by the same technique. The development of large area pixel detectors is technically feasible but requires a very large effort. A joint development effort with industries involved in X-ray detection and 2D photodetectors might be the most appropriate solution. (orig.)

Emerging trends in the stabilization of amorphous drugs

DEFF Research Database (Denmark)

Laitinen, Riikka; Löbmann, Korbinian; Strachan, Clare J.

2013-01-01

The number of active pharmaceutical substances having high therapeutic potential but low water solubility is constantly increasing, making it difficult to formulate these compounds as oral dosage forms. The solubility and dissolution rate, and thus potentially the bioavailability, of these poorly...... water-soluble drugs can be increased by the formation of stabilized amorphous forms. Currently, formulation as solid polymer dispersions is the preferred method to enhance drug dissolution and to stabilize the amorphous form of a drug. The purpose of this review is to highlight emerging alternative...... of mesoporous silicon and silica-based carriers are presented as potential means to increase the stability of amorphous pharmaceuticals....

Imaging of Crystalline and Amorphous Surface Regions Using Time-of-Flight Secondary-Ion Mass Spectrometry (ToF-SIMS): Application to Pharmaceutical Materials.

Science.gov (United States)

Iuraş, Andreea; Scurr, David J; Boissier, Catherine; Nicholas, Mark L; Roberts, Clive J; Alexander, Morgan R

2016-04-05

The structure of a material, in particular the extremes of crystalline and amorphous forms, significantly impacts material performance in numerous sectors such as semiconductors, energy storage, and pharmaceutical products, which are investigated in this paper. To characterize the spatial distribution for crystalline-amorphous forms at the uppermost molecular surface layer, we performed time-of-flight secondary-ion mass spectroscopy (ToF-SIMS) measurements for quench-cooled amorphous and recrystallized samples of the drugs indomethacin, felodipine, and acetaminophen. Polarized light microscopy was used to localize crystallinity induced in the samples under controlled conditions. Principal component analysis was used to identify the subtle changes in the ToF-SIMS spectra indicative of the amorphous and crystalline forms for each drug. The indicators of amorphous and crystalline surfaces were common in type across the three drugs, and could be explained in general terms of crystal packing and intermolecular bonding, leading to intramolecular bond scission in the formation of secondary ions. Less intramolecular scission occurred in the amorphous form, resulting in a greater intensity of molecular and dimer secondary ions. To test the generality of amorphous-crystalline differentiation using ToF-SIMS, a different recrystallization method was investigated where acetaminophen single crystals were recrystallized from supersaturated solutions. The findings indicated that the ability to assign the crystalline/amorphous state of the sample using ToF-SIMS was insensitive to the recrystallization method. This demonstrates that ToF-SIMS is capable of detecting and mapping ordered crystalline and disordered amorphous molecular materials forms at micron spatial resolution in the uppermost surface of a material.

Study on the fabrication of silicon nanoparticles in an amorphous silicon light absorbing layer for solar cell applications

International Nuclear Information System (INIS)

Park, Joo Hyung; Song, Jin Soo; Lee, Jae Hee; Lee, Jeong Chul

2012-01-01

Hydrogenated amorphous-silicon (a-Si:H) thin-film solar cells have advantages of relatively simple technology, less material consumption, higher absorption ratio compared to crystalline silicon, and low cost due to the use of cheaper substrates rather than silicon wafers. However, together with those advantages, amorphous-silicon thin-film solar cells face several issues such as a relatively lower efficiency, a relatively wider bandgap, and the Staebler-Wronski effect (SWE) compared to other competing materials (i.e., crystalline silicon, CdTe, Cu(In x Ga (1-x) )Se 2 (CIGS), etc.). As a remedy for those drawbacks and a way to enhance the cell conversion efficiency at the same time, the employment of crystalline silicon nanoparticles (Si-NPs) in the a-Si matrix is proposed to organize the quantum-dot (QD) structure as the light-absorbing layer. This structure of the light absorbing layer consists of single-crystal Si-NPs in an a-Si:H thin-film matrix. The single-crystal Si-NPs are synthesized by using SiH 4 gas decomposition with CO 2 laser pyrolysis, and the sizes of Si-NPs are calibrated to control their bandgaps. The synthesized size-controlled Si-NPs are directly transferred to another chamber to form a QD structure by using co-deposition of the Si-NPs and the a-Si:H matrix. Transmission electron microscopy (TEM) analyses are employed to verify the sizes and the crystalline properties of the Si-NPs alone and of the Si-NPs in the a-Si:H matrix. The TEM results show successful co-deposition of size-controlled Si-NPs in the a-Si:H matrix, which is meaningful because it suggests the possibility of further enhancement of the a-Si:H solar-cell structure and of tandem structure applications by using a single element.

Molecular dynamics study of amorphous pocket formation in Si at low energies and its application to improve binary collision models

International Nuclear Information System (INIS)

Santos, Ivan; Marques, Luis A.; Pelaz, Lourdes; Lopez, Pedro

2007-01-01

In this paper, we present classical molecular dynamics results about the formation of amorphous pockets in silicon for energy transfers below the displacement threshold. While in binary collision simulations ions with different masses generate the same number of Frenkel pairs for the same deposited nuclear energy, in molecular dynamics simulations the amount of damage and its complexity increase with ion mass. We demonstrate that low-energy transfers to target atoms are able to generate complex damage structures. We have determined the conditions that have to be fulfilled to produce amorphous pockets, showing that the order-disorder transition depends on the particular competition between melting and heat diffusion processes. We have incorporated these molecular dynamics results in an improved binary collision model that is able to provide a good description of damage with a very low computational cost

Effective self-purification of polynary metal electroplating wastewaters through formation of layered double hydroxides.

Science.gov (United States)

Zhou, Ji Zhi; Wu, Yue Ying; Liu, Chong; Orpe, Ajay; Liu, Qiang; Xu, Zhi Ping; Qian, Guang Ren; Qiao, Shi Zhang

2010-12-01

Heavy metal ions (Ni(2+), Zn(2+), and Cr(3+)) can be effectively removed from real polynary metal ions-bearing electroplating wastewaters by a carbonation process, with ∼99% of metal ions removed in most cases. The synchronous formation of layered double hydroxide (LDH) precipitates containing these metal ions was responsible for the self-purification of wastewaters. The constituents of formed polynary metals-LDHs mainly depended on the Ni(2+):Zn(2+):Cr(3+) molar ratio in wastewaters. LDH was formed at pH of 6.0-8.0 when the Ni(2+)/Zn(2+) molar ratio ≥ 1 where molar fraction of trivalent metal in the wastewaters was 0.2-0.4, otherwise ZnO, hydrozincite, or amorphous precipitate was observed. In the case of LDH formation, the residual concentration of Ni(2+), Zn(2+), and Cr(3+) in the treated wastewaters was very low, about 2-3, ∼2, and ∼1 mg/L, respectively, at 20-80 °C and pH of 6.0-8.0, indicating the effective incorporation of heavy metal ions into the LDH matrix. Furthermore, the obtained LDH materials were used to adsorb azoic dye GR, with the maximum adsorption amount of 129-134 mg/g. We also found that the obtained LDHs catalyzed more than 65% toluene to decompose at 350 °C under ambient pressure. Thus the current research has not only shown effective recovery of heavy metal ions from the electroplating wastewaters in an environmentally friendly process but also demonstrated the potential utilization of recovered materials.

Generation of amorphous ceramic capacitor coatings on titanium using a continuous sol-gel process

International Nuclear Information System (INIS)

Dixon, B.G.; Walsh, M.A. III; Phillips, P.G.; Morris, R.S.

1995-01-01

Thin amorphous films of ceramic capacitor materials were successfully deposited using sol-gel chemistry onto titanium wire using a continuous, computer controlled process. By repeatedly depositing and calcining very thin layers of material, smooth and even coats can be produced. Surface analyses revealed the layered nature of these thin coats, as well as the amorphous nature of the ceramic. The electrical properties of the better coatings, all composed of niobium, bismuth, zinc oxides, were then evaluated. copyright 1995 Materials Research Society

Citrate effects on amorphous calcium carbonate (ACC) structure, stability, and crystallization

DEFF Research Database (Denmark)

Tobler, Dominique Jeanette; Rodriguez Blanco, Juan Diego; Dideriksen, Knud

2015-01-01

Understanding the role of citrate in the crystallization kinetics of amorphous calcium carbonate (ACC) is essential to explain the formation mechanisms, stabilities, surface properties, and morphologies of CaCO3 biominerals. It also contributes to deeper insight into fluid-mineral inte......Understanding the role of citrate in the crystallization kinetics of amorphous calcium carbonate (ACC) is essential to explain the formation mechanisms, stabilities, surface properties, and morphologies of CaCO3 biominerals. It also contributes to deeper insight into fluid...

Investigation on corrosion and wear behaviors of nanoparticles reinforced Ni-based composite alloying layer

International Nuclear Information System (INIS)

Xu Jiang; Tao Jie; Jiang Shuyun; Xu Zhong

2008-01-01

In order to investigate the role of amorphous SiO 2 particles in corrosion and wear resistance of Ni-based metal matrix composite alloying layer, the amorphous nano-SiO 2 particles reinforced Ni-based composite alloying layer has been prepared by double glow plasma alloying on AISI 316L stainless steel surface, where Ni/amorphous nano-SiO 2 was firstly predeposited by brush plating. The composition and microstructure of the nano-SiO 2 particles reinforced Ni-based composite alloying layer were analyzed by using SEM, TEM and XRD. The results indicated that the composite alloying layer consisted of γ-phase and amorphous nano-SiO 2 particles, and under alloying temperature (1000 deg. C) condition, the nano-SiO 2 particles were uniformly distributed in the alloying layer and still kept the amorphous structure. The corrosion resistance of composite alloying layer was investigated by an electrochemical method in 3.5%NaCl solution. Compared with single alloying layer, the amorphous nano-SiO 2 particles slightly decreased the corrosion resistance of the Ni-Cr-Mo-Cu alloying layer. X-ray photoelectron spectroscopy (XPS) revealed that the passive films formed on the composite alloying consisted of Cr 2 O 3 , MoO 3 , SiO 2 and metallic Ni and Mo. The dry wear test results showed that the composite alloying layer had excellent friction-reduced property, and the wear weight loss of composite alloying layer was less than 60% of that of Ni-Cr-Mo-Cu alloying layer

Determination of hydrogen concentration in a-Si and a-Ge layers by elastic recoil detection analysis

International Nuclear Information System (INIS)

Khanh, N.Q.; Serenyi, M.

2010-01-01

Compete text of publication follows. Hydrogenated amorphous Si and Ge films are of current interest in academic and industrial research due to their unique physical properties and important applications. The incorporation of hydrogen in the amorphous network is an accepted means for reducing the density of defect states in the midgap. The passivation of dangling-bonds leads to a significant improvement in the electronic and optical properties of these layers. However, hydrogen is also suspected to degrade the performance of amorphous Si and Ge material and devices. Several studies related to hydrogen motion have been proposed to explain the light and thermal degradation effect in these layers. Thus to improve the performance and reliability of these devices, it is crucially important to understand the role of hydrogen in amorphous layers. In our previous works the structural changes of hydrogenated a-Si/Ge multilayers as a function of annealing condition was investigated. It was shown that during annealing the samples underwent significant structural changes. Due to the fast out-diffusion of hydrogen from the layers prepared with high (6 ml/min) H 2 flow rate, bubbles and craters were created on the surface. However, in the multilayer samples prepared with hydrogen flow rate lower than 6 ml/min the macroscopic degradation by formation bubbles and craters was more moderated. The diffusion measurement shows that in these samples the structural degradation and intermixing of layers was slower than in the non-hydrogenated samples. As it was suggested the hydrogen can inactivate the dangling bonds of amorphous layers and, as a result of this, the intermixing slows down. It was also predicted that the hydrogen first released from the Ge layers because of the lower binding energy. In this work, we have studied the individual a-Si and a-Ge hydrogenated layers prepared by RF sputtering on Si (100) substrates. The absolute value of atomic content of the H was determined by

A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors.

Science.gov (United States)

Ha, Tae-Jun; Cho, Won-Ju; Chung, Hong-Bay; Koo, Sang-Mo

2015-09-01

We investigate photo-induced instability in thin-film transistors (TFTs) consisting of amorphous indium-gallium-zinc-oxide (a-IGZO) as active semiconducting layers by comparing with hydrogenated amorphous silicon (a-Si:H). An a-IGZO TFT exhibits a large hysteresis window in the illuminated measuring condition but no hysteresis window in the dark condition. On the contrary, a large hysteresis window measured in the dark condition in a-Si:H was not observed in the illuminated condition. Even though such materials possess the structure of amorphous phase, optical responses or photo instability in TFTs looks different from each other. Photo-induced hysteresis results from initially trapped charges at the interface between semiconductor and dielectric films or in the gate dielectric which possess absorption energy to interact with deep trap-states and affect the movement of Fermi energy level. In order to support our claim, we also perform CV characteristics in photo-induced hysteresis and demonstrate thermal-activated hysteresis. We believe that this work can provide important information to understand different material systems for optical engineering which includes charge transport and band transition.

Formation mechanism of the graphite-rich protective layer in blast furnace hearths

Science.gov (United States)

Jiao, Ke-xin; Zhang, Jian-liang; Liu, Zheng-jian; Liu, Feng; Liang, Li-sheng

2016-01-01

A long campaign life of blast furnaces is heavily linked to the existence of a protective layer in their hearths. In this work, we conducted dissection studies and investigated damage in blast furnace hearths to estimate the formation mechanism of the protective layer. The results illustrate that a significant amount of graphite phase was trapped within the hearth protective layer. Furthermore, on the basis of the thermodynamic and kinetic calculations of the graphite precipitation process, a precipitation potential index related to the formation of the graphite-rich protective layer was proposed to characterize the formation ability of this layer. We determined that, under normal operating conditions, the precipitation of graphite phase from hot metal was thermodynamically possible. Among elements that exist in hot metal, C, Si, and P favor graphite precipitation, whereas Mn and Cr inhibit this process. Moreover, at the same hot-face temperature, an increase of carbon concentration in hot metal can shorten the precipitation time. Finally, the results suggest that measures such as reducing the hot-face temperature and increasing the degree of carbon saturation in hot metal are critically important to improve the precipitation potential index.

Development of an amorphous surge blocker for a high voltage acceleration power supply of the neutral beam injectors

International Nuclear Information System (INIS)

Mizuno, Makoto; Ohara, Yoshihiro; Watanabe, Kazuhiro; Ozaki, Akira.

1993-10-01

An amorphous surge blocker for a high voltage acceleration power supply for the neutral beam injectors has been developed. Since the saturation magnetic flux density of the amorphous core is higher than that of the ferrite core, the surge blocker made of amorphous cores can be reduced in size appreciably compared to the conventional ferrite surge blocker. A 350 kV, 0.05 volt-second amorphous surge blocker was designed, fabricated and tested. The amorphous core was made by winding an amorphous tape with a film for the layer insulation and was heat-treated to recover the magnetic characteristics. The core is molded by epoxy resin and installed in a FRP insulator tube filled with SF 6 gas for the insulation. The volt-second measured was higher than the designed value and the electrical breakdown along the cores and between layers was not observed. This test result shows that the amorphous surge blocker is applicable for a dc acceleration power supply for high energy neutral beam injectors. (author)

Electron beam-induced radiation damage: the bubbling response in amorphous dried sodium phosphate buffer.

Science.gov (United States)

Massover, William H

2010-06-01

Irradiation of an amorphous layer of dried sodium phosphate buffer (pH = 7.0) by transmission electron microscopy (100-120 kV) causes rapid formation of numerous small spherical bubbles [10-100 A (= 1-10 nm)] containing an unknown gas. Bubbling is detected even with the first low-dose exposure. In a thin layer (ca. 100-150 A), bubbling typically goes through nucleation, growth, possible fusion, and end-state, after which further changes are not apparent; co-irradiated adjacent areas having a slightly smaller thickness never develop bubbles. In moderately thicker regions (ca. over 200 A), there is no end-state. Instead, a complex sequence of microstructural changes is elicited during continued intermittent high-dose irradiation: nucleation, growth, early simple fusions, a second round of extensive multiple fusions, general reduction of matrix thickness (producing flattening and expansion of larger bubbles, occasional bubble fission, and formation of very large irregularly-shaped bubbles by a third round of compound fusion events), and slow shrinkage of all bubbles. The ongoing lighter appearance of bubble lumens, maintenance of their rounded shape, and extensive changes in size and form indicate that gas content continues throughout their surprisingly long lifetime; the thin dense boundary layer surrounding all bubbles is proposed to be the main mechanism for their long lifetime.

Generalized melting criterion for beam-induced amorphization

International Nuclear Information System (INIS)

Lam, N. Q.; Okamoto, Paul R.

1993-09-01

Recent studies have shown that the mean-square static atomic displacements provide a generic measure of the enthalpy stored in the lattice in the form of chemical and topological disorder, and that the effect of the displacements on the softening of shear elastic constants is identical to that of heating. This finding lends support to a generalized form of the Lindemann phenomenological melting criterion and leads to a natural interpretion of crystalline-to-amorphous transformations as defect-induced melting of metastable crystals driven beyond a critical state of disorder where the melting temperature falls below the glass-transition temperature. Application of the generalized Lindemann criterion to both the crystalline and amorphous phases indicates that the enthalpies of the two phases become identical when their shear moduli become equal. This thermo-elastic rule provides a basis for predicting the relative susceptibility of compounds to amorphization in terms of their elastic properties as measured by Debye temperatures. The present approach can explain many of the basic findings on beam-induced amorphization of intermetallic compounds as well as amorphous phase formation associated with ion implantation, ion-beam mixing and other solid-state processes

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

Science.gov (United States)

Yang, Xu; Nitta, Shugo; Pristovsek, Markus; Liu, Yuhuai; Nagamatsu, Kentaro; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi

2018-05-01

Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

Abscission Layer Formation as a Resistance Response of Peruvian Apple Cactus Against Glomerella cingulata.

Science.gov (United States)

Kim, Young Ho; Kim, Kwang-Hyung

2002-09-01

ABSTRACT Stem disks from 2-year-old cacti Cereus tetragonus (susceptible) and C. peruvianus (resistant) were inoculated in the center (pith) with Glomerella cingulata isolated from Colletotrichum stem rot in three-angled cacti. The susceptible cactus became extensively colonized, whereas colonization was limited to a small area in the resistant cactus. The resistant cactus formed prominent abscission layers (ALs) in parenchyma internal to the inoculation site. Ethanol extracts of the fungal culture also stimulated AL formation in the resistant cactus. Initial cell division followed at 2 to 4 days after treatment, and layering of multiple cells at 7 days after treatment. After 10 days, the outer layers were sometimes sloughed from the inner layers. No AL formation was induced in susceptible C. tetragonus treated with ethanol extract or in untreated control cacti. Light and electron microscopy revealed that initial cell division occurred by cell wall formation, and that an additional cell wall was layered in pre-existing parenchyma cells without ordinary cell division. Later, separation layers formed in ALs where inner cell walls appeared to be thickened secondarily, and the cell walls and middle lamella within the layer dissolved. These results suggest that AL formation in the resistant cactus is induced by fungal metabolites, and that it serves as a histological barrier against anthracnose pathogens.

Interfacial mixing in double-barrier magnetic tunnel junctions with amorphous NiFeSiB layers

International Nuclear Information System (INIS)

Chun, B.S.; Ko, S.P.; Hwang, J.Y.; Rhee, J.R.; Kim, T.W.; Kim, Y.K.

2007-01-01

Double-barrier magnetic tunnel junctions (DMTJs) comprising Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer (CoFe 4/NiFeSiB 2/CoFe 4, CoFe 10, or NiFeSiB 10)/AlO x /CoFe 7/IrMn 10/Ru 60 (nm) have been examined with an emphasis given on understanding the interfacial mixing effects. The DMTJ, consisted of NiFeSiB, shows low switching field and low bias voltage dependence because the amorphous NiFeSiB has lower M S (=800 emu/cm 3 ) and offers smoother interfaces than polycrystalline CoFe. An interesting feature observed in the CoFe/NiFeSiB/CoFe sandwich free layered DMTJ is the presence of a wavy MR transfer curve at high-resistance region. Because the polycrystalline CoFe usually grows into a columnar structure, diamagnetic CoSi, paramagnetic FeSi, and/or diamagnetic CoB might have been formed during the sputter-deposition process. By employing electron energy loss spectrometry (EELS) and Auger electron spectroscopy (AES), we were able to confirm that Si and B atoms were arranged evenly in the top and bottom portions of AlO x /CoFe interfaces. This means that the interfacial mixing resulted in a distorted magnetization reversal process

Amorphization, morphological instability and crystallization of krypton ion irradiated germanium

International Nuclear Information System (INIS)

Wang, L.M.; Birtcher, R.C.

1991-01-01

Krypton ion irradiation of crystalline Ge and subsequent thermal annealing were both carried out with in situ transmission electron microscopy observations. The temperature dependence of the amorphization dose, effect of foil thickness, morphological changes during continuous irradiation of the amorphous state as well as the effect of implanted gas have been determined. The dose of 1.5 MeV Kr required for amorphization increases with increasing temperature. At a fixed temperature, the amorphization dose is higher for thicker regions of the specimen. Continuous irradiation of amorphous Ge at room temperature results in a high density of small cavities which grow with increasing dose. Cavities do not coalesce during growth but develop into irregular-shaped holes that eventually transform the amorphous Ge into a sponge-like material. Formation of the spongy structure is independent of Kr implantation. The crystallization temperature and the morphology of recrystallized Ge depend on the Kr + dose. Voids are expelled from recrystallized Ge, while the sponge-like structure is retained after crystallization. (author)

Crystallization-induced plasticity of Cu-Zr containing bulk amorphous alloys

International Nuclear Information System (INIS)

Lee, Seok-Woo; Huh, Moo-Young; Fleury, Eric; Lee, Jae-Chul

2006-01-01

This study examined the parameter governing the plasticity observed in various Cu-Zr containing monolithic amorphous alloys. All the alloys were fully amorphous in their as-cast condition but exhibited different plastic strains. Microscopic observations of the quasi-statically compressed alloys showed abundant nanocrystallites in the amorphous matrices in the alloys that exhibited pronounced plasticity. On the other hand, insignificant changes in the microstructure were observed in the alloy that did not show plasticity. The mechanism for the formation of these deformation-induced nanocrystallites was examined from the viewpoints of thermodynamics and kinetics. The role of the deformation-induced nanocrystallites on the plasticity of the amorphous alloy was examined using high-resolution transmission electron microscopy. The results demonstrate that compressive loading facilitates nanocrystallization in monolithic Cu-Zr containing amorphous alloys, resulting in plasticity. The parameter governing the plasticity in these monolithic Cu-Zr containing amorphous alloys lies in the activation energy for the overall crystallization process

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes

Directory of Open Access Journals (Sweden)

Shiben Hu

2018-03-01

Full Text Available In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO thin-film transistor (TFT based on alumina oxide (Al 2 O 3 passivation layer (PVL and copper (Cu source/drain electrodes (S/D. The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al 2 O 3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al 2 O 3 PVL exhibited remarkable mobility of 33.5–220.1 cm 2 /Vs when channel length varies from 60 to 560 μ m. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously.

Surface layers in the 4A group metals with implanted silicon ions

International Nuclear Information System (INIS)

Kovneristyj, Yu.K.; Vavilova, V.V.; Krasnopevtsev, V.V.; Galkin, L.N.; Kudyshev, A.N.; Klechkovskaya, V.V.

1987-01-01

A study was made on the change of structure and phase composition of fine near the surface layers of 4A group metals (Hf, Zr, Ti) during ion Si implantation and successive thermal annealing at elevated temperatures. Implantation of Si + ions with 30 or 16 keV energy in Ti, Zr and Hf at room temperature results to amorphization of metal surface layer. The surface hafnium and titanium layer with implanted Si atoms due to interaction with residual atmosphere of oxygen turns during annealing at 870 K to amorphous solid solution of HfO 2m or TiO 2 with Si, preventing further metal oxidation; layers of amorphous alloy are characterized by thermal stability up to 1270 K. Oxidation of the surface amorphous layer in residual oxygen atmosphere and its crystallization in ZrO 2 take place in result of Zr annealing with implanted Si ions at temperature not exceeding 870 K. Similar phenomena are observed in the case of hafnium with implanted oxygen ions or small dose of silicon ions. Thermal stability of amorphous layers produced during ion implantation of Si in Ti, Zr and Hf corresponds to scale resistance of monolithic alloys in Ti-Si, Zr-Si and Hf-Si systems

Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

Energy Technology Data Exchange (ETDEWEB)

Li, Xiaopu, E-mail: xl6ba@virginia.edu; Ma, Chung T.; Poon, S. Joseph, E-mail: sjp9x@virginia.edu [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Devaraj, Arun [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Spurgeon, Steven R.; Comes, Ryan B. [Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

2016-01-04

Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

Nanoparticle layer deposition for highly controlled multilayer formation based on high-coverage monolayers of nanoparticles

International Nuclear Information System (INIS)

Liu, Yue; Williams, Mackenzie G.; Miller, Timothy J.; Teplyakov, Andrew V.

2016-01-01

This paper establishes a strategy for chemical deposition of functionalized nanoparticles onto solid substrates in a layer-by-layer process based on self-limiting surface chemical reactions leading to complete monolayer formation within the multilayer system without any additional intermediate layers — nanoparticle layer deposition (NPLD). This approach is fundamentally different from previously established traditional layer-by-layer deposition techniques and is conceptually more similar to well-known atomic and molecular layer deposition processes. The NPLD approach uses efficient chemical functionalization of the solid substrate material and complementary functionalization of nanoparticles to produce a nearly 100% coverage of these nanoparticles with the use of “click chemistry”. Following this initial deposition, a second complete monolayer of nanoparticles is deposited using a copper-catalyzed “click reaction” with the azide-terminated silica nanoparticles of a different size. This layer-by-layer growth is demonstrated to produce stable covalently-bound multilayers of nearly perfect structure over macroscopic solid substrates. The formation of stable covalent bonds is confirmed spectroscopically and the stability of the multilayers produced is tested by sonication in a variety of common solvents. The 1-, 2- and 3-layer structures are interrogated by electron microscopy and atomic force microscopy and the thickness of the multilayers formed is fully consistent with that expected for highly efficient monolayer formation with each cycle of growth. This approach can be extended to include a variety of materials deposited in a predesigned sequence on different substrates with a highly conformal filling. - Highlights: • We investigate the formation of high-coverage monolayers of nanoparticles. • We use “click chemistry” to form these monolayers. • We form multiple layers based on the same strategy. • We confirm the formation of covalent bonds

Evidence of localized amorphous silicon clustering from Raman depth-probing of silicon nanocrystals in fused silica

International Nuclear Information System (INIS)

Barba, D; Martin, F; Ross, G G

2008-01-01

Silicon nanocrystals (Si-nc) and amorphous silicon (α-Si) produced by silicon implantation in fused silica have been studied by micro-Raman spectroscopy. Information regarding the Raman signature of the α-Si phonon excitation was extracted from Raman depth-probing measurements using the phenomenological phonon confinement model. The spectral deconvolution of the Raman measurements recorded at different laser focusing depths takes into account both the Si-nc size variation and the Si-nc spatial distribution within the sample. The phonon peak associated with α-Si around 470 cm -1 is greatest for in-sample laser focusing, indicating that the formation of amorphous silicon is more important in the region containing a high concentration of silicon excess, where large Si-nc are located. As also observed for Si-nc systems prepared by SiO x layer deposition, this result demonstrates the presence of α-Si in high excess Si implanted Si-nc systems

Amorphous germanium as an electron or hole blocking contact on high-purity germanium detectors

International Nuclear Information System (INIS)

Hansen, W.L.; Haller, E.E.

1976-10-01

Experiments were performed in an attempt to make thin n + contacts on high-purity germanium by the solid phase/sup 1)/ epitaxial regrowth of arsenic doped amorphous germanium. After cleaning the crystal surface with argon sputtering and trying many combinations of layers, it was not found possible to induce recrystallization below 400 0 C. However, it was found that simple thermally evaporated amorphous Ge made fairly good electron or hole blocking contacts. Excellent spectrometers have been made with amorphous Ge replacing the n + contact. As presently produced, the amorphous Ge contact diodes show a large variation in high-voltage leakage current

Synthesis and densification of Cu-coated Ni-based amorphous composite powders

International Nuclear Information System (INIS)

Kim, Yong-Jin; Kim, Byoung-Kee; Kim, Jin-Chun

2007-01-01

Spherical Ni 57 Zr 20 Ti 16 Si 2 Sn 3 (numbers indicate at.%) amorphous powders were produced by the gas atomization process, and ductile Cu phase was coated on the Ni-based amorphous powders by the spray drying process in order to increase the ductility of the consolidated amorphous alloy. The characteristics of the as-prepared powders and the consolidation behaviors of Cu-coated Ni-based amorphous composite powders were investigated. The atomization was conducted at 1450 deg. C under the vacuum of 10 -2 mbar. The Ni-based amorphous powders and Cu nitrate solution were mixed and sprayed at temperature of 130 deg. C. After spray drying and reduction treatment, the sub-micron size Cu powders were coated successfully on the surface of the atomized Ni amorphous powders. The spark plasma sintering process was applied to study the densification behavior of the Cu-coated composite powders. Thickness of the Cu layer was less than 1 μm. The compacts obtained by SPS showed high relative density of over 98% and its hardness was over 800 Hv

FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films

International Nuclear Information System (INIS)

Conde, J.C.; Martín, E.; Stefanov, S.; Alpuim, P.; Chiussi, S.

2012-01-01

Highlights: ► nc-Si:H is a material with growing importance for a large-area of nano-electronic, photovoltaic or biomedical devices. ► UV-ELA technique causes a rapid heating that provokes the H 2 desorption from the Si surface and bulk material. ► Next, diffusion of P doped nc-Si films and eventually, for high energy densities would be possible to reach the melting point. ► These multilayer structures consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) films deposited on SiO 2 . ► To optimize parameters involved in this processing, FEM numerical analysis of multilayer structures have been performed. ► The numerical results are compared with exhaustive characterization of the experimental results. - Abstract: UV excimer laser annealing (UV-ELA) is an alternative annealing process that, during the last few years, has gained enormous importance for the CMOS nano-electronic technologies, with the ability to provide films and alloys with electrical and optical properties to fit the desired device performance. The UV-ELA of amorphous (a-) and/or doped nano-crystalline (nc-) silicon films is based on the rapid (nanoseconds) formation of temperature profiles caused by laser radiation that is absorbed in the material and lead to crystallisation, diffusion in solid or even in liquid phase. To achieve the desired temperature profiles and to optimize the parameters involved in the processing of hydrogenated nanocrystalline silicon (nc-Si:H) films with the UV-ELA, a numerical analysis by finite element method (FEM) of a multilayer structure has been performed. The multilayer structures, consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) layers, deposited on a glass substrate, has also been experimentally analyzed. Temperature profiles caused by 193 nm radiation with 25 ns pulse length and energy densities ranging from 50 mJ/cm 2 to 400 mJ/cm 2 have been calculated. Numerical results allowed us to estimate the dehydrogenation

Achievement report on Sunshine Program research and development for fiscal 1981. Research and development of amorphous solar cells (Optical research of electronic state in amorphous silicon); 1981 nendo amorphous silicon no denshi jotai no kagakuteki kenkyu seika hokokusho. Amorphous taiyo denchi no kenkyu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1982-03-01

The basic physical properties of glow discharge-decomposed amorphous silicon film are studied. The performance of an a-Si p-i-n (amorphous silicon positive-intrinsic-negative) junction solar cell is found to be greatly affected by the binding of carriers along the p-i or i-n interface. A new concept is introduced, which is useful in the study of the photo-produced carrier collection process. The distance between the plasma excitation center and the substrate and the intensity of the electric field just above the substrate are changed systematically for the evaluation of film quality and for the study of film formation mechanism. It is found that plasma excitation as a mechanism of film deposition, the transportation of excited seeds to the substrate, and the incorporation of film constituting atoms into the film are important. A high-speed ion beam technique is used for the analysis of impurities. In the case of a-Si or a-SiC deposition by glow discharge decomposition, metallic Sn or In is deposited along the interface and diffused into the deposited film. The diffusion is closely related to the performance of solar cells, and a 2-layer structure incorporating the merits of both ITO (indium-tin oxide) and SnO{sub 2} films is found suitable for this purpose. Using an a-SiC:H/a-Si:H heterojunction solar cell, a conversion efficiency of 8.04% is achieved. (NEDO)

On contribution of horizontal and intra-layer convection to the formation of the Baltic Sea cold intermediate layer

Directory of Open Access Journals (Sweden)

I. Chubarenko

2010-02-01

Full Text Available Seasonal cascades down the coastal slopes and intra-layer convection are considered as the two additional mechanisms contributing to the Baltic Sea cold intermediate layer (CIL formation along with conventional seasonal vertical mixing. Field measurements are presented, reporting for the first time the possibility of denser water formation and cascading from the Baltic Sea underwater slopes, which take place under fall and winter cooling conditions and deliver waters into intermediate layer of salinity stratified deep-sea area. The presence in spring within the CIL of water with temperature below that of maximum density (Tmd and that at the local surface in winter time allows tracing its formation: it is argued that the source of the coldest waters of the Baltic CIL is early spring (March–April cascading, arising due to heating of water before reaching the Tmd. Fast increase of the open water heat content during further spring heating indicates that horizontal exchange rather than direct solar heating is responsible for that. When the surface is covered with water, heated above the Tmd, the conditions within the CIL become favorable for intralayer convection due to the presence of waters of Tmd in intermediate layer, which can explain its well-known features – the observed increase of its salinity and deepening with time.

Production of three-dimensional quantum dot lattice of Ge/Si core-shell quantum dots and Si/Ge layers in an alumina glass matrix.

Science.gov (United States)

Buljan, M; Radić, N; Sancho-Paramon, J; Janicki, V; Grenzer, J; Bogdanović-Radović, I; Siketić, Z; Ivanda, M; Utrobičić, A; Hübner, R; Weidauer, R; Valeš, V; Endres, J; Car, T; Jerčinović, M; Roško, J; Bernstorff, S; Holy, V

2015-02-13

We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2O3/Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells.

Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping.

Science.gov (United States)

Jeong, Seung-Ki; Kim, Myeong-Ho; Lee, Sang-Yeon; Seo, Hyungtak; Choi, Duck-Kyun

2014-01-01

In this study, InGaZnO (IGZO) thin film transistors (TFTs) with a dual active layer (DAL) structure are fabricated by inserting a homogeneous embedded conductive layer (HECL) in an amorphous IGZO (a-IGZO) channel with the aim of enhancing the electrical characteristics of conventional bottom-gate-structure TFTs. A highly conductive HECL (carrier concentration at 1.6 × 10(13) cm(-2), resistivity at 4.6 × 10(-3) Ω∙cm, and Hall mobility at 14.6 cm(2)/Vs at room temperature) is fabricated using photochemical H-doping by irradiating UV light on an a-IGZO film. The electrical properties of the fabricated DAL TFTs are evaluated by varying the HECL length. The results reveal that carrier mobility increased proportionally with the HECL length. Further, a DAL TFT with a 60-μm-long HECL embedded in an 80-μm-long channel exhibits comprehensive and outstanding improvements in its electrical properties: a saturation mobility of 60.2 cm(2)/Vs, threshold voltage of 2.7 V, and subthreshold slope of 0.25 V/decade against the initial values of 19.9 cm(2)/Vs, 4.7 V, and 0.45 V/decade, respectively, for a TFT without HECL. This result confirms that the photochemically H-doped HECL significantly improves the electrical properties of DAL IGZO TFTs.

Charged particle detectors made from thin layers of amorphous silicon

International Nuclear Information System (INIS)

Morel, J.R.

1986-05-01

A series of experiments was conducted to determine the feasibility of using hydrogenated amorphous silicon (α-Si:H) as solid state thin film charged particle detectors. 241 Am alphas were successfully detected with α-Si:H devices. The measurements and results of these experiments are presented. The problems encountered and changes in the fabrication of the detectors that may improve the performance are discussed

Structural and phase transformations in the low-temperature annealed amorphous “finemet”-type microwires

Energy Technology Data Exchange (ETDEWEB)

Tcherdyntsev, V.V., E-mail: vvch08@yandex.ru [National University of Science and Technology “MISIS”, Moscow 119049 (Russian Federation); Aleev, A.A. [SSC RF Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation); Churyukanova, M.N.; Kaloshkin, S.D. [National University of Science and Technology “MISIS”, Moscow 119049 (Russian Federation); Medvedeva, E.V. [Institute of Electrophysics, Ural Branch, Russian Academy of Sciences, Yekaterinburg 620016 (Russian Federation); Korchuganova, O.A. [SSC RF Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation); Zhukova, V. [Dpto. de Fns. Mater., UPV/EHU, San Sebastian 20018 (Spain); Zhukov, A.P. [Dpto. de Fns. Mater., UPV/EHU, San Sebastian 20018 (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain)

2014-02-15

Highlights: • Structure and magnetic properties evolution at heating of amorphous microwires was studied. • Relaxation processes in the amorphous phase correlate with an increase in Curie temperature. • Curie temperature change can not be stabilized by a prolonged exposure at pre-crystallization temperatures. • Tomographic atom probe microscopy supports the formation of α-Fe phase precipitations enriched in Si. -- Abstract: Finemet-type glass-coated microwires with amorphous and nanocrystalline structure have been investigated. The relaxation and crystallization processes at heating of amorphous alloy have been studied by DSC method. We observed that the relaxation processes in the amorphous phase correlate with an increasing of the Curie temperature. Additionally a prolonged exposure of the samples below the crystallization temperatures does not stabilize the Curie temperature change. An investigation by the tomographic atom probe microscopy supports the formation of precipitations, probably α-Fe phase, as a result of low-temperature annealing (400 °C, 5 min). We found that the observed nano-sized areas were enriched in silicon.

Structural and phase transformations in the low-temperature annealed amorphous “finemet”-type microwires

International Nuclear Information System (INIS)

Tcherdyntsev, V.V.; Aleev, A.A.; Churyukanova, M.N.; Kaloshkin, S.D.; Medvedeva, E.V.; Korchuganova, O.A.; Zhukova, V.; Zhukov, A.P.

2014-01-01

Highlights: • Structure and magnetic properties evolution at heating of amorphous microwires was studied. • Relaxation processes in the amorphous phase correlate with an increase in Curie temperature. • Curie temperature change can not be stabilized by a prolonged exposure at pre-crystallization temperatures. • Tomographic atom probe microscopy supports the formation of α-Fe phase precipitations enriched in Si. -- Abstract: Finemet-type glass-coated microwires with amorphous and nanocrystalline structure have been investigated. The relaxation and crystallization processes at heating of amorphous alloy have been studied by DSC method. We observed that the relaxation processes in the amorphous phase correlate with an increasing of the Curie temperature. Additionally a prolonged exposure of the samples below the crystallization temperatures does not stabilize the Curie temperature change. An investigation by the tomographic atom probe microscopy supports the formation of precipitations, probably α-Fe phase, as a result of low-temperature annealing (400 °C, 5 min). We found that the observed nano-sized areas were enriched in silicon

Preparation, properties, and application characteristics of metastable layers of the Ti-Si-C-N system

International Nuclear Information System (INIS)

Fella, R.

1992-10-01

In the Ti-Si-C and Ti-Si-C-N systems, metastable layers were precipitated by means of non-reactive magnetron sputtering of hot-pressed two-phase TiC/SiC and TiN/SiC targets with 20 mole% and 50 mole% SiC. The preparation parameters were varied as follows: ion bombardment during precipitation (bias sputtering), substrate temperature, and annealing times when annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC layers. Sputtering of targets containing 20% SiC was found to result in monophase fcc layers (NaCl structure). This was documented on the basis of X-ray and electron diffraction patterns. Direct precipitation of targets with 50 mole% SiC resulted in amorphous layers. Increasing the ion bombardment during accretion, raising the substrate temperature, and annealing amorphous 50%:50% TiC/SiC and 50%:50% TiN/SiC (layers precipitated directly) resulted in the crystallization of TiC and TiN nanocrystallites, respectively, imbedded in an amorphous SiC matrix. These crystallites were detected both by X-ray and by electron diffractions and by XPS studies. The XPS measurements of crystalline TiC and amorphous SiC reference layers demonstrated the existence of new kinds of carbon interface phases ('pseudocarbide layers') around TiC and amorphous SiC regions, respectively, which have a positive impact on the mechanical properties of the layers. The hardness of the layers can be correlated with the degrees of crystallization and texture. Adhesion and toughness are worse in SiC-bearing layers than PVD TiC and TiN layers, respectively. The application characteristics of the layers were determined by model wear tests relative to 100Cr6 by means of a pin/disk tribometer. N-bearing layers were found to have clearly higher friction coefficients and greater wear than layers without N. (orig.)

Method of forming buried oxide layers in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2000-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Ge nitride formation in N-doped amorphous Ge2Sb2Te5

International Nuclear Information System (INIS)

Jung, M.-C.; Lee, Y. M.; Kim, H.-D.; Kim, M. G.; Shin, H. J.; Kim, K. H.; Song, S. A.; Jeong, H. S.; Ko, C. H.; Han, M.

2007-01-01

The chemical state of N in N-doped amorphous Ge 2 Sb 2 Te 5 (a-GST) samples with 0-14.3 N at. % doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge x-ray absorption spectroscopy (XAS). HRXPS showed negligible change in the Te 4d and Sb 4d core-level spectra. In the Ge 3d core-level spectra, a Ge nitride (GeN x ) peak developed at the binding energy of 30.2 eV and increased in intensity as the N-doping concentration increased. Generation of GeN x was confirmed by the Ge K-edge absorption spectra. These results indicate that the N atoms bonded with the Ge atoms to form GeN x , rather than bonding with the Te or Sb atoms. It has been suggested that the formation of Ge nitride results in increased resistance and phase-change temperature

Effect of hydridation on structure of amorphous and amorphous-crystalline Fe40Ni40B20 and Co70Fe5Si15B10 bands

International Nuclear Information System (INIS)

Il'inskij, A.G.; Brovko, A.P.; Zelinskaya, G.M.; Kosenko, N.S.; Khristenko, T.M.; Kobzenko, G.F.; Shkola, A.A.

1988-01-01

The structure of amorphous and amorphous-crystaliline Fe 40 Ni 40 B 20 and Co 70 Fe 5 Si-1 5 B 10 alloys, exposed to hydridation at different temperatures, is studied by X-ray diffraction technique. The presence of crystalline constituent in amorphous bands was determined on DRON-3 device and by method of small-angle scattering. The experimental data obtained verify, that hydridation does not only prevent the formation of crystalline phases at annealing, but leads, as well, to disappearance of band crystalline constituent in case of its presence

First principles-based multiparadigm, multiscale strategy for simulating complex materials processes with applications to amorphous SiC films

Energy Technology Data Exchange (ETDEWEB)

Naserifar, Saber [Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-1211 (United States); Materials and Process Simulation Center, California Institute of Technology, Pasadena, California 91125 (United States); Goddard, William A. [Materials and Process Simulation Center, California Institute of Technology, Pasadena, California 91125 (United States); Tsotsis, Theodore T.; Sahimi, Muhammad, E-mail: moe@usc.edu [Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-1211 (United States)

2015-05-07

Progress has recently been made in developing reactive force fields to describe chemical reactions in systems too large for quantum mechanical (QM) methods. In particular, ReaxFF, a force field with parameters that are obtained solely from fitting QM reaction data, has been used to predict structures and properties of many materials. Important applications require, however, determination of the final structures produced by such complex processes as chemical vapor deposition, atomic layer deposition, and formation of ceramic films by pyrolysis of polymers. This requires the force field to properly describe the formation of other products of the process, in addition to yielding the final structure of the material. We describe a strategy for accomplishing this and present an example of its use for forming amorphous SiC films that have a wide variety of applications. Extensive reactive molecular dynamics (MD) simulations have been carried out to simulate the pyrolysis of hydridopolycarbosilane. The reaction products all agree with the experimental data. After removing the reaction products, the system is cooled down to room temperature at which it produces amorphous SiC film, for which the computed radial distribution function, x-ray diffraction pattern, and the equation of state describing the three main SiC polytypes agree with the data and with the QM calculations. Extensive MD simulations have also been carried out to compute other structural properties, as well the effective diffusivities of light gases in the amorphous SiC film.

Electron irradiation effects in amorphous antimony thin films obtained by cluster-beam deposition

Energy Technology Data Exchange (ETDEWEB)

Fuchs, G.; Treilleux, M.; Santos Aires, F.; Cabaud, B.; Melinon, P.; Hoareau, A. (Lyon-1 Univ., 69 - Villeurbanne (France))

1991-03-01

In order to understand the differences existing between films obtained with a classical molecular beam deposition (MBD) and the new low-energy cluster beam deposition (LECBD), transmission electron microscopy has been used to characterize the first stages of antimony LECBD. Antimony deposits are discontinuous and amorphous up to 2 nm in thickness. They are formed with isolated amorphous antimony particles surrounded by an amorphous antimony oxide shell. Moreover, under electron beam exposure in the microscope, an amorphous-crystal transformation has been observed in the oxide shell. Electron irradiation induces the formation of a crystallized antimony oxide (Sb{sub 2}O{sub 3}) around the amorphous antimony core. (author).

Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si

Science.gov (United States)

Byun, Young-Chul; Lee, Jae-Gil; Meng, Xin; Lee, Joy S.; Lucero, Antonio T.; Kim, Si Joon; Young, Chadwin D.; Kim, Moon J.; Kim, Jiyoung

2017-08-01

In this paper, the effect of atomic layer deposited ZrO2 gate dielectrics, deposited at low temperature (100 °C), on the characteristics of recessed-gate High Electron Mobility Transistors (HEMTs) on Al0.25Ga0.75N/GaN/Si is investigated and compared with the characteristics of those with ZrO2 films deposited at typical atomic layer deposited (ALD) process temperatures (250 °C). Negligible hysteresis (ΔVth 4 V), and low interfacial state density (Dit = 3.69 × 1011 eV-1 cm-2) were observed on recessed gate HEMTs with ˜5 nm ALD-ZrO2 films grown at 100 °C. The excellent properties of recessed gate HEMTs are due to the absence of an interfacial layer and an amorphous phase of the film. An interfacial layer between 250 °C-ZrO2 and GaN is observed via high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. However, 100 °C-ZrO2 and GaN shows no significant interfacial layer formation. Moreover, while 100 °C-ZrO2 films maintain an amorphous phase on either substrate (GaN and Si), 250 °C-ZrO2 films exhibit a polycrystalline-phase when deposited on GaN and an amorphous phase when deposited on Si. Contrary to popular belief, the low-temperature ALD process for ZrO2 results in excellent HEMT performance.

Formation of amorphous metal alloys by chemical vapor deposition

Science.gov (United States)

Mullendore, A.W.

1988-03-18

Amorphous alloys are deposited by a process of thermal dissociation of mixtures of organometallic compounds and metalloid hydrides,e.g., transition metal carbonyl, such as nickel carbonyl and diborane. Various sizes and shapes of deposits can be achieved, including near-net-shape free standing articles, multilayer deposits, and the like. Manipulation or absence of a magnetic field affects the nature and the structure of the deposit. 1 fig.

Formation of Lamellar Structured Oxide Dispersion Strengthening Layers in Zircaloy-4

Energy Technology Data Exchange (ETDEWEB)

Jung, Yang-Il; Park, Jung-Hwan; Park, Dong-Jun; Kim, Hyun-Gil; Yang, Jae-Ho; Koo, Yang-Hyun [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Lim, Yoon-Soo [Hanbat National University, Daejeon (Korea, Republic of)

2016-10-15

Korea Atomic Energy Research Institute (KAERI) is one of the leading organizations for developing ATF claddings. One concept is to form an oxidation-resistant layer on Zr cladding surface. The other is to increase high-temperature mechanical strength of Zr tube. The oxide dispersion strengthened (ODS) zirconium was proposed to increase the strength of the Zr-based alloy up to high temperatures. According to our previous investigations, the tensile strength of Zircaloy-4 was increased by up to 20% with the formation of a thin dispersed oxide layer with a thickness less than 10% of that of the Zircaloy-4 substrate. However, the tensile elongation of the samples decreased drastically. The brittle fracture was a major concern in development of the ODS Zircaloy-4. In this study, a lamellar structure of ODS layer was formed to increase ductility of the ODS Zircaloy-4. The mechanical properties were varied depending on the structure of ODS layer. For example, the partial formation of ODS layer with the thickness of 10% to the substrate thickness induced the increase in tensile strength up to about 20% than fresh Zircaloy-4.

MHD flow layer formation at boundaries of magnetic islands in tokamak plasmas

International Nuclear Information System (INIS)

Jiaqi Dong; Yongxing Long; Zongze Mou; Jinhua Zhang

2005-01-01

Non-linear development of double tearing modes induced by electron viscosity is numerically simulated. MHD flow layers are demonstrated to merge in the development of the modes. The sheared flows are shown to lie just at the boundaries of the magnetic islands, and to have sufficient levels required for internal transport barrier (ITB) formation. Possible correlation between the layer formation and triggering of experimentally observed ITBs, preferentially formed in proximities of rational flux surfaces of low safety factors, is discussed. (author)

Amorphous Ge quantum dots embedded in SiO2 formed by low energy ion implantation

International Nuclear Information System (INIS)

Zhao, J. P.; Huang, D. X.; Jacobson, A. J.; Chen, Z. Y.; Makarenkov, B.; Chu, W. K.; Bahrim, B.; Rabalais, J. W.

2008-01-01

Under ultrahigh vacuum conditions, extremely small Ge nanodots embedded in SiO 2 , i.e., Ge-SiO 2 quantum dot composites, have been formed by ion implantation of 74 Ge + isotope into (0001) Z-cut quartz at a low kinetic energy of 9 keV using varying implantation temperatures. Transmission electron microscopy (TEM) images and micro-Raman scattering show that amorphous Ge nanodots are formed at all temperatures. The formation of amorphous Ge nanodots is different from reported crystalline Ge nanodot formation by high energy ion implantation followed by a necessary high temperature annealing process. At room temperature, a confined spatial distribution of the amorphous Ge nanodots can be obtained. Ge inward diffusion was found to be significantly enhanced by a synergetic effect of high implantation temperature and preferential sputtering of surface oxygen, which induced a much wider and deeper Ge nanodot distribution at elevated implantation temperature. The bimodal size distribution that is often observed in high energy implantation was not observed in the present study. Cross-sectional TEM observation and the depth profile of Ge atoms in SiO 2 obtained from x-ray photoelectron spectra revealed a critical Ge concentration for observable amorphous nanodot formation. The mechanism of formation of amorphous Ge nanodots and the change in spatial distribution with implantation temperature are discussed

Modeling the influence of interaction layer formation on thermal conductivity of U–Mo dispersion fuel

International Nuclear Information System (INIS)

Burkes, Douglas E.; Casella, Andrew M.; Huber, Tanja K.

2015-01-01

Highlights: • Hsu equation provides best thermal conductivity estimate of U–Mo dispersion fuel. • Simple model considering interaction layer formation was coupled with Hsu equation. • Interaction layer thermal conductivity is not the most important attribute. • Effective thermal conductivity is mostly influenced by interaction layer formation. • Fuel particle distribution also influences the effective thermal conductivity. - Abstract: The Global Threat Reduction Initiative Program continues to develop existing and new test reactor fuels to achieve the maximum attainable uranium loadings to support the conversion of a number of the world’s remaining high-enriched uranium fueled reactors to low-enriched uranium fuel. Currently, the program is focused on assisting with the development and qualification of a fuel design that consists of a uranium–molybdenum (U–Mo) alloy dispersed in an aluminum matrix. Thermal conductivity is an important consideration in determining the operational temperature of the fuel and can be influenced by interaction layer formation between the dispersed phase and matrix, porosity that forms during fabrication of the fuel plates or rods, and upon the concentration of the dispersed phase within the matrix. This paper develops and validates a simple model to study the influence of interaction layer formation, dispersed particle size, and volume fraction of dispersed phase in the matrix on the effective conductivity of the composite. The model shows excellent agreement with results previously presented in the literature. In particular, the thermal conductivity of the interaction layer does not appear to be as important in determining the effective conductivity of the composite, while formation of the interaction layer and subsequent consumption of the matrix reveals a rather significant effect. The effective thermal conductivity of the composite can be influenced by the dispersed particle distribution by minimizing interaction

The effect of inducing uniform Cu growth on formation of electroless Cu seed layer

International Nuclear Information System (INIS)

Lim, Taeho; Kim, Myung Jun; Park, Kyung Ju; Kim, Kwang Hwan; Choe, Seunghoe; Lee, Young-Soo; Kim, Jae Jeong

2014-01-01

The uniformity of Cu growth on Pd nanocatalysts was controlled by using organic additives in the formation of electroless Cu seed layers. Polyethylene glycol (PEG, Mw. 8000) not only reduced the deposition rate but also improved the uniformity of Cu growth on each Pd nanocatalyst during the seed layer formation. The stronger suppression effect of PEG on Cu than on Pd reduced the difference in the deposition rate between the two surfaces, resulting in the uniform deposition. Meanwhile, bis(3-sulfopropyl) disulfide degraded the uniformity by strong and nonselective suppression. The sheet resistance measurement and atomic force microscopy imaging revealed that the uniform Cu growth by PEG was more advantageous for the formation of a thin and smooth Cu seed layer than the non-uniform growth. The uniform Cu growth also had a positive influence on the subsequent Cu electrodeposition: the 60-nm-thick electrodeposited Cu film on the Cu seed layer showed low resistivity (2.70 μΩ·cm), low surface roughness (6.98 nm), and good adhesion strength. - Highlights: • Uniform Cu growth on Pd was achieved in formation of electroless Cu seed layer. • PEG addition to electroless bath improved the uniformity of Cu growth on Pd. • A thin, smooth and continuous Cu seed layer was obtained with PEG. • Adhesion strength of the Cu seed layer was also improved with PEG. • The uniformity improvement positively affected subsequent Cu electrodeposition

Parametric Study of Amorphous High-Entropy Alloys formation from two New Perspectives: Atomic Radius Modification and Crystalline Structure of Alloying Elements

Science.gov (United States)

Hu, Q.; Guo, S.; Wang, J. M.; Yan, Y. H.; Chen, S. S.; Lu, D. P.; Liu, K. M.; Zou, J. Z.; Zeng, X. R.

2017-01-01

Chemical and topological parameters have been widely used for predicting the phase selection in high-entropy alloys (HEAs). Nevertheless, previous studies could be faulted due to the small number of available data points, the negligence of kinetic effects, and the insensitivity to small compositional changes. Here in this work, 92 TiZrHfM, TiZrHfMM, TiZrHfMMM (M = Fe, Cr, V, Nb, Al, Ag, Cu, Ni) HEAs were prepared by melt spinning, to build a reliable and sufficiently large material database to inspect the robustness of previously established parameters. Modification of atomic radii by considering the change of local electronic environment in alloys, was critically found out to be superior in distinguishing the formation of amorphous and crystalline alloys, when compared to using atomic radii of pure elements in topological parameters. Moreover, crystal structures of alloying element were found to play an important role in the amorphous phase formation, which was then attributed to how alloying hexagonal-close-packed elements and face-centered-cubic or body-centered-cubic elements can affect the mixing enthalpy. Findings from this work not only provide parametric studies for HEAs with new and important perspectives, but also reveal possibly a hidden connection among some important concepts in various fields.

The Stabilization of Amorphous Zopiclone in an Amorphous Solid Dispersion.

Science.gov (United States)

Milne, Marnus; Liebenberg, Wilna; Aucamp, Marique

2015-10-01

Zopiclone is a poorly soluble psychotherapeutic agent. The aim of this study was to prepare and characterize an amorphous form of zopiclone as well as the characterization and performance of a stable amorphous solid dispersion. The amorphous form was prepared by the well-known method of quench-cooling of the melt. The solid dispersion was prepared by a solvent evaporation method of zopiclone, polyvinylpyrrolidone-25 (PVP-25), and methanol, followed by freeze-drying. The physico-chemical properties and stability of amorphous zopiclone and the solid dispersion was studied using differential scanning calorimetry (DSC), infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA), scanning electron microscopy (SEM), hot-stage microscopy (HSM), X-ray diffractometry (XRD), solubility, and dissolution studies. The zopiclone amorphous solid-state form was determined to be a fragile glass; it was concluded that the stability of the amorphous form is influenced by both temperature and water. Exposure of amorphous zopiclone to moisture results in rapid transformation of the amorphous form to the crystalline dihydrated form. In comparison, the amorphous solid dispersion proved to be more stable with increased aqueous solubility.

Dendritic azo compounds as a new type amorphous molecular material with quick photoinduced surface-relief-grating formation ability

Science.gov (United States)

He, Yaning; Gu, Xinyu; Guo, Miaocai; Wang, Xiaogong

2008-09-01

A series of dendritic azobenzene-containing compounds have been synthesized as a new type amorphous molecular material, which can show quick surface-relief-grating (SRG) formation ability upon light irradiation. For the synthesis, the dendritic precursor tris(2-(ethyl(phenyl)amino)ethyl)benzene-1,3,5-tricarboxylate and tris(3,5-bis(2-(ethyl(phenyl)amino)ethoxy)benzyl)benzene-1,3,5-tricarboxylate were prepared by esterification reactions between 1,3,5-benzenetricarbonyl chloride and N-ethyl- N-hydroxyethyl-aniline and 3,5-bis[2-( N-ethylanilino)ethoxy] benzylalcohol. The precursors were, respectively reacted with the diazonium salts of 4-nitroaniline, 4-aminobenzoic acid, and 4-aminobenzonitrile to introduce different types of donor-acceptor azo chromophores at the peripheral positions. The structure and properties of the dendritic azo compounds were characterized by the spectroscopic methods and thermal analysis. The surface-relief-grating (SRG) formation behavior of the dendritic azo compounds was studied by exposing the spin-coated thin films to an interference pattern of laser beams (532 nm) at modest intensity (100 mW/cm 2). The results show that the azo compounds can form stable amorphous glasses in a broad temperature range. The glass transition temperatures ( Tgs) depend on the backbone structures and the type of the peripheral azo chromophors. The type of the electron withdrawing groups in the p-positions of the terminal azobenzene units shows a significant influence on the SRG inscription rate. For the compounds containing the same type azo chromophores, the SRG inscription rate is also affected by the backbone structure.

Low temperature irradiation effects on iron boron based amorphous metallic alloys

International Nuclear Information System (INIS)

Audouard, A.

1982-09-01

Three Fe-B amorphous alloys (Fe 80 B 20 , Fe 27 Mo 2 B 20 and Fe 75 B 25 ) and the crystallized Fe 3 B alloy have been irradiated at the temperature of liquid hydrogen. Electron irradiation and irradiation by 10 B fission fragments induce point defects in amorphous alloys. These defects are characterized by an intrinsic resistivity and a formation volume. The threshold energy for the displacement of iron atoms has also been calculated. Irradiation by 235 U fission fragments induces some important structural modifications in the amorphous alloys [fr

Formation of quasicrystals and amorphous-to-quasicrystalline phase transformation kinetics in Zr65Al7.5Ni10Cu7.5Ag10 metallic glass under pressure

DEFF Research Database (Denmark)

Jiang, Jianzhong; Zhuang, Yanxin; Rasmussen, Helge Kildahl

2001-01-01

The effect of pressure on the formation of quasicrystals and the amorphous-to-quasicrystalline phase transformation kinetics in the supercooled liquid region for a Zr65Al7.5Ni10Cu7.5Ag10 metallic glass have been investigated by in situ high-pressure and high-temperature nonisothermal and isothermal...... of quasicrystals decrease, Atomic mobility is important for the formation of quasicrystals from the metallic glass whereas the relationship of the crystallization temperature vs pressure for the transition from the quasicrystalline state to intermetallic compounds may mainly depend on the thermodynamic potential...... energy barrier. To study the amorphous-to-quasicrystalline phase transformation kinetics in the metallic glass, relative volume fractions of the transferred quasicrystalline phase as a function of annealing time, obtained at 663, 673, 683, and 693 K, have been analyzed in details using 14 nucleation...

Surface patterning for brittle amorphous material using nanoindenter-based mechanochemical nanofabrication

Energy Technology Data Exchange (ETDEWEB)

Park, Jeong Woo; Choi, Soo Chang; Kim, Yong Woo [Department of Nano Fusion Technology, Pusan National University, Miryang 627-706 (Korea, Republic of); Lee, Chae Moon [Samsung Electro-Mechanics, Busan 618-721 (Korea, Republic of); Lee, Deug Woo [Department of Nano System and Process Engineering, Pusan National University, Miryang 627-706 (Korea, Republic of)], E-mail: dwoolee@pusan.ac.kr

2008-02-27

This paper demonstrates a micro/nanoscale surface patterning technology for brittle material using mechanical and chemical processes. Fused silica was scratched with a Berkovich tip under various normal loads from several mN to several tens of mN with various tip rotations. The scratched substrate was then chemically etched in hydrofluoric solution to evaluate the chemical properties of the different deformed layers produced under various mechanical scratching conditions. Our results showed that either protruding or depressed patterns could be generated on the scratched surface after chemical etching by controlling the tip rotation, the normal load and the etching condition. In addition, the mask effect of amorphous material after mechanical scratching was controlled by conventional mechanical machining conditions such as contact area, chip formation, plastic flow and material removal.

Stabilization of amorphous calcium carbonate by controlling its particle size

NARCIS (Netherlands)

Nudelman, F.; Sonmezler, E.; Bomans, P.H.H.; With, de G.; Sommerdijk, N.A.J.M.

2010-01-01

Amorphous calcium carbonate (ACC) nanoparticles of different size are prepared using a flow system. Post-synthesis stabilization with a layer of poly[(a,ß)-DL-aspartic acid] leads to stabilization of the ACC, but only for particles

Dependence of magnetic properties on ferromagnetic layer thickness in trilayer Co/Ge/Co films with granular semiconducting spacer

International Nuclear Information System (INIS)

Patrin, G.S.; Lee, C.-G.; Turpanov, I.A.; Zharkov, S.M.; Velikanov, D.A.; Maltsev, V.K.; Li, L.A.; Lantsev, V.V.

2006-01-01

We have investigated the magnetic properties of trilayer films of Co-Ge-Co. At a fixed thickness of germanium of 3.5 nm, the formation and distribution of metastable amorphous and cubic phases depends on the thickness of the ferromagnetic layer. The portion of the stable hexagonal phase is affected, too. Possible mechanisms for forming the observed magnetic structure are discussed

Temperature-dependent interface characteristic of silicon wafer bonding based on an amorphous germanium layer deposited by DC-magnetron sputtering

Science.gov (United States)

Ke, Shaoying; Lin, Shaoming; Ye, Yujie; Mao, Danfeng; Huang, Wei; Xu, Jianfang; Li, Cheng; Chen, Songyan

2018-03-01

We report a near-bubble-free low-temperature silicon (Si) wafer bonding with a thin amorphous Ge (a-Ge) intermediate layer. The DC-magnetron-sputtered a-Ge film on Si is demonstrated to be extremely flat (RMS = 0.28 nm) and hydrophilic (contact angle = 3°). The effect of the post-annealing temperature on the surface morphology and crystallinity of a-Ge film at the bonded interface is systematically identified. The relationship among the bubble density, annealing temperature, and crystallinity of a-Ge film is also clearly clarified. The crystallization of a-Ge film firstly appears at the bubble region. More interesting feature is that the crystallization starts from the center of the bubbles and sprawls to the bubble edge gradually. The H2 by-product is finally absorbed by intermediate Ge layer with crystalline phase after post annealing. Moreover, the whole a-Ge film out of the bubble totally crystallizes when the annealing time increases. This Ge integration at the bubble region leads to the decrease of the bubble density, which in turn increases the bonding strength.

Circuit effects on pierce instabilities, and double-layer formation

International Nuclear Information System (INIS)

Raadu, M.A.; Silevitch, M.B.

1982-11-01

The role of the Pierce instability in the formation of double layers is considered and compared with that of the Buneman instability. Pierce instabilities have been identified in a double-layer experiment, where they lead to ion trapping. Here the effects of external circuit elements are considered. In the case of immobile ions the onset criteria are unaffected, but in the unstable range the growth rate is reduced by the external impedance. Required experimental values of the circuit elements are estimated. The possible relevance to computer simulations is noted. (Authors)

THE FORMATION AND CHARACTERIZATION OF SUSTAINABLE LAYERED FILMS INCORPORATING MICROFIBRILLATED CELLULOSE (MFC)

OpenAIRE

Galina Rodionova,; Solenne Roudot; , Øyvind Eriksen,; Ferdinand Männle,; Øyvind Gregersen

2012-01-01

Microfibrillated cellulose (MFC), TEMPO-pretreated MFC, and hybrid polymer/MFC mix were used for the production of layered films with interesting properties for application in food packaging. The series of samples were prepared from MFC (base layers) using a dispersion-casting method. The same procedure as well as a bar coating technique was applied to form top layers of different basis weights. The barrier properties and formation of the layered films were investigated in relationship to the...

Study of the layer developed at the surface of a nuclear glass during alteration by water. Comparison between solution analysis data and electron microscopy data

International Nuclear Information System (INIS)

Thomassin, J.H.; Touray, J.C.; Nogues, J.L.

1983-01-01

The alteration of a nuclear glass by boiling water leads to the formation of a layer whose thickness is 7 μm after 27 days and 15 μm after 52 days. This layer is composed of two parts: the outer one, widely crystallised, in which one finds a silico-phosphatic zone bearing rare-earth elements, and an inner part widely amorphous whose thickness is time dependent [fr

Influence of irradiation spectrum and implanted ions on the amorphization of ceramics

International Nuclear Information System (INIS)

Zinkle, S.J.; Snead, L.L.

1995-01-01

Polycrystalline Al2O3, magnesium aluminate spinel (MgAl2O4), MgO, Si3N4, and SiC were irradiated with various ions at 200-450 K, and microstructures were examined following irradiation using cross-section TEM. Amorphization was not observed in any of the irradiated oxide ceramics, despsite damage energy densities up to ∼7 keV/atom (70 displacements per atom). On the other hand, SiC readily amorphized after damage levels of ∼0.4 dpa at room temperature (RT). Si3N4 exhibited intermediate behavior; irradiation with Fe 2+ ions at RT produced amorphization in the implanted ion region after damage levels of ∼1 dpa. However, irradiated regions outside the implanted ion region did not amorphize even after damage levels > 5 dpa. The amorphous layer in the Fe-implanted region of Si3N4 did not appear if the specimen was simultaneoulsy irradiated with 1-MeV He + ions at RT. By comparison with published results, it is concluded that the implantation of certain chemical species has a pronounced effect on the amorphization threshold dose of all five materials. Intense ionizing radiation inhibits amorphization in Si3N4, but does not appear to significantly influence the amorphization of SiC

The Soft-Confined Method for Creating Molecular Models of Amorphous Polymer Surfaces

KAUST Repository

Liu, Hongyi; Li, Yan; Krause, Wendy E.; Rojas, Orlando J.; Pasquinelli, Melissa A.

2012-01-01

The goal of this work was to use molecular dynamics (MD) simulations to build amorphous surface layers of polypropylene (PP) and cellulose and to inspect their physical and interfacial properties. A new method to produce molecular models for these surfaces was developed, which involved the use of a "soft" confining layer comprised of a xenon crystal. This method compacts the polymers into a density distribution and a degree of molecular surface roughness that corresponds well to experimental values. In addition, calculated properties such as density, cohesive energy density, coefficient of thermal expansion, and the surface energy agree with experimental values and thus validate the use of soft confining layers. The method can be applied to polymers with a linear backbone such as PP as well as those whose backbones contain rings, such as cellulose. The developed PP and cellulose surfaces were characterized by their interactions with water. It was found that a water nanodroplet spreads on the amorphous cellulose surfaces, but there was no significant change in the dimension of the droplet on the PP surface; the resulting MD water contact angles on PP and amorphous cellulose surfaces were determined to be 106 and 33°, respectively. © 2012 American Chemical Society.

The Soft-Confined Method for Creating Molecular Models of Amorphous Polymer Surfaces

KAUST Repository

Liu, Hongyi

2012-02-09

The goal of this work was to use molecular dynamics (MD) simulations to build amorphous surface layers of polypropylene (PP) and cellulose and to inspect their physical and interfacial properties. A new method to produce molecular models for these surfaces was developed, which involved the use of a "soft" confining layer comprised of a xenon crystal. This method compacts the polymers into a density distribution and a degree of molecular surface roughness that corresponds well to experimental values. In addition, calculated properties such as density, cohesive energy density, coefficient of thermal expansion, and the surface energy agree with experimental values and thus validate the use of soft confining layers. The method can be applied to polymers with a linear backbone such as PP as well as those whose backbones contain rings, such as cellulose. The developed PP and cellulose surfaces were characterized by their interactions with water. It was found that a water nanodroplet spreads on the amorphous cellulose surfaces, but there was no significant change in the dimension of the droplet on the PP surface; the resulting MD water contact angles on PP and amorphous cellulose surfaces were determined to be 106 and 33°, respectively. © 2012 American Chemical Society.

Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer.

Science.gov (United States)

Luo, Dongxiang; Zhao, Mingjie; Xu, Miao; Li, Min; Chen, Zikai; Wang, Lang; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

2014-07-23

Amorphous indium-zinc-oxide thin film transistors (IZO-TFTs) with damage-free back channel wet-etch (BCE) process were investigated. A carbon (C) nanofilm was inserted into the interface between IZO layer and source/drain (S/D) electrodes as a barrier layer. Transmittance electron microscope images revealed that the 3 nm-thick C nanofilm exhibited a good corrosion resistance to a commonly used H3PO4-based etchant and could be easily eliminated. The TFT device with a 3 nm-thick C barrier layer showed a saturated field effect mobility of 14.4 cm(2) V(-1) s(-1), a subthreshold swing of 0.21 V/decade, an on-to-off current ratio of 8.3 × 10(10), and a threshold voltage of 2.0 V. The favorable electrical performance of this kind of IZO-TFTs was due to the protection of the inserted C to IZO layer in the back-channel-etch process. Moreover, the low contact resistance of the devices was proved to be due to the graphitization of the C nanofilms after annealing. In addition, the hysteresis and thermal stress testing confirmed that the usage of C barrier nanofilms is an effective method to fabricate the damage-free BCE-type devices with high reliability.

Structure and low temperature thermal relaxation of amorphized germanium

International Nuclear Information System (INIS)

Glover, C.J.; Ridgway, M.C.; Byrne, A.P.; Clerc, C.; Hansen, J.L.; Larsen, A.N.

1999-01-01

The structure of implantation-induced damage in amorphized Ge has been investigated using high resolution extended x-ray absorption fine structure spectroscopy (EXAFS). EXAFS data analysis was performed with the Cumulant Method, allowing a full reconstruction of the interatomic distance distribution (RDF). For the case of MeV implantation at -196 deg C, for an ion-dose range extending two orders of magnitude beyond that required for amorphization, a dose-dependent asymmetric RDF was determined for the amorphous phase including an increase in bond-length as a function of ion dose. Low-temperature thermal annealing resulted in structural relaxation of the amorphous phase as evidenced by a reduction in the centroid, asymmetry and width of the RDF. Such an effect was attributed to the formation (and subsequent annihilation) of three- and five-fold Co-ordinated atoms, comparing favourably to theoretical simulations of the structure of a-Ge

Chronological change of electrical resistance in GeCu2Te3 amorphous film induced by surface oxidation

International Nuclear Information System (INIS)

Saito, Yuta; Shindo, Satoshi; Sutou, Yuji; Koike, Junichi

2014-01-01

Unusual chronological electrical resistance change behavior was investigated for amorphous GeCu 2 Te 3 phase change material. More than a 1 order decrease of electrical resistance was observed in the air even at room temperature. The resistance of the amorphous film gradually increased with increasing temperature and then showed a drop upon crystallization. Such unusual behavior was attributed to the oxidation of the amorphous GeCu 2 Te 3 film. From the compositional depth profile measurement, the GeCu 2 Te 3 film without any capping layer was oxidized in air at room temperature and the formed oxide was mainly composed of germanium oxide. Consequently, a highly-conductive Cu-rich layer was formed in the vicinity of the surface of the film, which reduced the total resistance of the film. The present results could provide insight into the chronological change of electrical resistance in amorphous chalcogenide materials, indicating that not only relaxation of the amorphous, but also a large atomic diffusion contributes to the chronological resistance change. (paper)

Amorphous clusters in Co implanted ZnO induced by boron pre-implantation

Energy Technology Data Exchange (ETDEWEB)

Potzger, K.; Shalimov, A.; Zhou, S.; Schmidt, H.; Mucklich, A.; Helm, M.; Fassbender, J.; Liberati, M.; Arenholz, E.

2009-02-09

We demonstrate the formation of superparamagnetic/ferromagnetic regions within ZnO(0001) single crystals sequently implanted with B and Co. While the pre-implantation with B plays a minor role for the electrical transport properties, its presence leads to the formation of amorphous phases. Moreover, B acts strongly reducing on the implanted Co. Thus, the origin of the ferromagnetic ordering in local clusters with large Co concentration is itinerant d-electrons as in the case of metallic Co. The metallic amorphous phases are non-detectable by common X-ray diffraction.

Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties

International Nuclear Information System (INIS)

Lee, Su-Jae; Hwang, Chi-Sun; Pi, Jae-Eun; Yang, Jong-Heon; Oh, Himchan; Cho, Sung Haeng; Cho, Kyoung-Ik; Chu, Hye Yong

2014-01-01

Multilayered ZnO-SnO 2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO 2 oxides target, and their structural and field effect electronic transport properties were investigated as a function of the thickness of the ZnO and SnO 2 layers. The films have an amorphous multilayered heterostructure composed of the periodic stacking of the ZnO and SnO 2 layers. The field effect electronic properties of amorphous multilayered ZnO-SnO 2 heterostructure thin film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO 2 layers. The highest electron mobility of 37 cm 2 /V s, a low subthreshold swing of a 0.19 V/decade, a threshold voltage of 0.13 V, and a high drain current on-to-off ratio of ∼10 10 obtained for the amorphous multilayered ZnO(1.5 nm)-SnO 2 (1.5 nm) heterostructure TFTs. These results are presumed to be due to the unique electronic structure of an amorphous multilayered ZnO-SnO 2 heterostructure film consisting of ZnO, SnO 2 , and ZnO-SnO 2 interface layers

CoCr double-layered media with NiFe and CoZrNb soft-magnetic layers (invited)

International Nuclear Information System (INIS)

Bernards, J.P.C.; Schrauwen, C.P.G.; Zieren, V.; Luitjens, S.B.

1988-01-01

The magnetic, structural, and recording properties of CoCr double-layered media are investigated. The underlayer materials NiFe (crystalline) and CoZrNb (amorphous) were combined with two different kinds of intermediate layers: Ti (crystalline) and Ge (amorphous). Applying a bias voltage during sputtering of NiFe results in a low coercivity of the NiFe layer and in a high coercivity of the CoCr layer. The structure of the NiFe layer influences the structure of the CoCr layer. A Ti layer between the NiFe and CoCr layers decreases the in-plane remanence of the CoCr layer. The coercivity of all CoZrNb layers is low, independent of the application of a bias voltage. The orientation and structure of CoCr on CoZrNb can be improved by using a Ge intermediate layer, which results in a low coercivity of the CoCr. A Ti intermediate layer increases the coercivity. Ring heads show a dependence of spike noise on the underlayer coercivity and on the applied normal force. A probe-type head shows a dependence of its output on the CoCr coercivity, which may be understood in terms of demagnetization and writing depth

Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.

Science.gov (United States)

Zhao, Sheng-Xun; Liu, Xiao-Yong; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Wang, Peng-Fei

2016-12-01

Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.

Fast diffusion and nucleation of the amorphous phase in Ni--Zr films

International Nuclear Information System (INIS)

Ehrhart, P.; Averback, R.S.; Hahn, H.; Yadavalli, S.; Flynn, C.P.

1988-01-01

The nucleation of the amorphous phase by solid-state reactions has been investigated on single-crystal Zr films grown by molecular beam epitaxy and covered in situ with either polycrystalline Ni, amorphous (a-) NiZr, or single-crystalline Zr 99 N 01 films. Interfacial reactions were investigated by backscattering analysis or secondary ion mass spectroscopy. The amorphizing reaction occurred only in the specimen with the a-NiZr overlayer, although fast Ni diffusion through the single-crystalline Zr layer was observed in all three specimens. The nucleation behavior of a-NiZr is attributed to the combination of high-Ni and low-Zr mobility in crystalline Zr

Further insight into the mechanism of hydrocarbon layer formation below the divertor of ASDEX Upgrade

International Nuclear Information System (INIS)

Mayer, M; Rohde, V

2006-01-01

The surface loss probability of hydrocarbon radicals was measured below the roof baffle of the ASDEX Upgrade divertor using the cavity technique. Hydrocarbon layers are mainly formed by sticking of hydrocarbon radicals with high surface loss probabilities of about 0.2 and close to unity. In addition to sticking, re-erosion by atomic hydrogen plays an important role in layer formation. The temperature dependence of layer formation was measured with heated and cooled long term samples from 77 to 475 K. The layer growth rate is larger by a factor of about 40 at 77 K compared with room temperature, while it is lower by a factor of about 70 at 475 K than at room temperature due to enhanced re-erosion. Implications of the results for predictions of tritium retention in future fusion devices and hydrocarbon layer formation on mirror surfaces are discussed

van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si

Science.gov (United States)

Xiang, Yu; Yang, Yunbo; Guo, Fawen; Sun, Xin; Lu, Zonghuan; Mohanty, Dibyajyoti; Bhat, Ishwara; Washington, Morris; Lu, Toh-Ming; Wang, Gwo-Ching

2018-03-01

Conventional hetero-epitaxial films are typically grown on lattice and symmetry matched single crystal substrates. We demonstrated the epitaxial growth of orthorhombic SnS film (∼500 nm thick) on single crystal, monolayer graphene that was transferred on the amorphous SiO2/Si substrate. Using X-ray pole figure analysis we examined the structure, quality and epitaxy relationship of the SnS film grown on the single crystal graphene and compared it with the SnS film grown on commercial polycrystalline graphene. We showed that the SnS films grown on both single crystal and polycrystalline graphene have two sets of orientation domains. However, the crystallinity and grain size of the SnS film improve when grown on the single crystal graphene. Reflection high-energy electron diffraction measurements show that the near surface texture has more phases as compared with that of the entire film. The surface texture of a film will influence the growth and quality of film grown on top of it as well as the interface formed. Our result offers an alternative approach to grow a hetero-epitaxial film on an amorphous substrate through a single crystal graphene buffer layer. This strategy of growing high quality epitaxial thin film has potential applications in optoelectronics.

Compositional changes in the channel layer of an amorphous In–Ga–Zn-O thin film transistor after thermal annealing

International Nuclear Information System (INIS)

Kang, Jiyeon; Lee, Su Jeong; Myoung, Jae-Min; Kim, Chul-Hong; Chae, Gee Sung; Jun, Myungchul; Hwang, Yong Kee; Lee, Woong

2012-01-01

In order to investigate the possible reason for the improved device performances of amorphous In–Ga–Zn-O (a-IGZO) thin film transistors after thermal annealing, changes in the elemental concentrations in the a-IGZO channel regions and related device performances due to thermal annealing were observed. It was found that thermal annealing introduces a substantial level of oxygen deficiencies in the channel layer accompanying significantly enhanced device performances. The improved device performances are attributed to the oxygen deficiency which is believed to be averaged over the entire structure to function as shallow donors increasing the carrier concentrations. Such a deduction was supported by the changes in the absorption spectra of the a-IGZO films with various thermal histories. (paper)

Vacuum ultraviolet photoabsorption spectroscopy of crystalline and amorphous benzene

DEFF Research Database (Denmark)

Dawes, Anita; Pascual, Natalia; Hoffmann, Soren V.

2017-01-01

We present the first high resolution vacuum ultraviolet photoabsorption study of amorphous benzene with com parisons to annealed crystalline benzene and the gas phase. Vapour deposited benzene layers w ere grow n at 25 K and annealed to 90 K under conditions pertinent to interstellaricy dust grains...

Amorphous metal composites

International Nuclear Information System (INIS)

Byrne, M.A.; Lupinski, J.H.

1984-01-01

This patent discloses an improved amorphous metal composite and process of making the composite. The amorphous metal composite comprises amorphous metal (e.g. iron) and a low molecular weight thermosetting polymer binder. The process comprises placing an amorphous metal in particulate form and a thermosetting polymer binder powder into a container, mixing these materials, and applying heat and pressure to convert the mixture into an amorphous metal composite

Graphene as a transparent electrode for amorphous silicon-based solar cells

International Nuclear Information System (INIS)

Vaianella, F.; Rosolen, G.; Maes, B.

2015-01-01

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles

Graphene as a transparent electrode for amorphous silicon-based solar cells

Science.gov (United States)

Vaianella, F.; Rosolen, G.; Maes, B.

2015-06-01

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

Graphene as a transparent electrode for amorphous silicon-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Vaianella, F., E-mail: Fabio.Vaianella@umons.ac.be; Rosolen, G.; Maes, B. [Micro- and Nanophotonic Materials Group, Faculty of Science, University of Mons, 20 place du Parc, B-7000 Mons (Belgium)

2015-06-28

The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

High-resolution transmission electron microscopy of grain-refining particles in amorphous aluminum alloys

International Nuclear Information System (INIS)

Schumacher, P.; Greer, A.L.

1996-01-01

The nucleation mechanism of Al-Ti-B grain refiners is studied in an Al-based amorphous alloy. The ability to limit growth of α-Al in the amorphous alloy permits the microscopical observation of nucleation events on boride particles. Earlier studies of this kind are extended by using high-resolution electron microscopy. This shows that the efficient nucleation α-Al depends on the TiB 2 particles being coated with a thin layer of Al 3 Ti, which can form only when there is some excess titanium in the melt. The aluminide layer, stabilized by adsorption effects, can be as little as a few monolayers thick, and is coherent with the boride. The nature of this layer, and its importance for the nucleation mechanism are discussed. The fading of the grain refinement action is also considered

In Vitro Characterization of the Two-Stage Non-Classical Reassembly Pathway of S-Layers

Directory of Open Access Journals (Sweden)

Andreas Breitwieser

2017-02-01

Full Text Available The recombinant bacterial surface layer (S-layer protein rSbpA of Lysinibacillus sphaericus CCM 2177 is an ideal model system to study non-classical nucleation and growth of protein crystals at surfaces since the recrystallization process may be separated into two distinct steps: (i adsorption of S-layer protein monomers on silicon surfaces is completed within 5 min and the amount of bound S-layer protein sufficient for the subsequent formation of a closed crystalline monolayer; (ii the recrystallization process is triggered—after washing away the unbound S-layer protein—by the addition of a CaCl2 containing buffer solution, and completed after approximately 2 h. The entire self-assembly process including the formation of amorphous clusters, the subsequent transformation into crystalline monomolecular arrays, and finally crystal growth into extended lattices was investigated by quartz crystal microbalance with dissipation (QCM-D and atomic force microscopy (AFM. Moreover, contact angle measurements showed that the surface properties of S-layers change from hydrophilic to hydrophobic as the crystallization proceeds. This two-step approach is new in basic and application driven S-layer research and, most likely, will have advantages for functionalizing surfaces (e.g., by spray-coating with tailor-made biological sensing layers.

Insulator layer formation in MgB2 SIS junctions

International Nuclear Information System (INIS)

Shimakage, H.; Tsujimoto, K.; Wang, Z.; Tonouchi, M.

2005-01-01

The dependence of current-voltage characteristics on thin film deposition conditions was investigated using MgB 2 /AlN/NbN SIS junctions. By increasing the substrate temperature in AlN insulator deposition, the current density decreased and the normal resistance increased. The results indicated that an additional insulator layer between the MgB 2 and AlN formed, either before or during the AlN deposition. The thickness of the additional insulator layer was increased with an increase in the AlN deposition temperature. From the dependence of current density on the thickness of AlN in low temperature depositions, the thickness of the additional insulator layer was estimated to be 1-1.5 nm when the AlN insulator was deposited from 0.14 to 0.7 nm. Moreover, with the current density of MgB 2 /AlN/MgB 2 SIS junctions, further insulator layer formation was confirmed

Low-energy electron irradiation induced top-surface nanocrystallization of amorphous carbon film

Science.gov (United States)

Chen, Cheng; Fan, Xue; Diao, Dongfeng

2016-10-01

We report a low-energy electron irradiation method to nanocrystallize the top-surface of amorphous carbon film in electron cyclotron resonance plasma system. The nanostructure evolution of the carbon film as a function of electron irradiation density and time was examined by transmission electron microscope (TEM) and Raman spectroscopy. The results showed that the electron irradiation gave rise to the formation of sp2 nanocrystallites in the film top-surface within 4 nm thickness. The formation of sp2 nanocrystallite was ascribed to the inelastic electron scattering in the top-surface of carbon film. The frictional property of low-energy electron irradiated film was measured by a pin-on-disk tribometer. The sp2 nanocrystallized top-surface induced a lower friction coefficient than that of the original pure amorphous film. This method enables a convenient nanocrystallization of amorphous surface.

Face-specific Replacement of Calcite by Amorphous Silica Nanoparticles

Science.gov (United States)

Liesegang, M.; Milke, R.; Neusser, G.; Mizaikoff, B.

2016-12-01

Amorphous silica, composed of nanoscale spheres, is an important biomineral, alteration product of silicate rocks on the Earth's surface, and precursor material for stable silicate minerals. Despite constant progress in silica sphere synthesis, fundamental knowledge of natural silica particle interaction and ordering processes leading to colloidal crystals is absent so far. To understand the formation pathways of silica spheres in a geologic environment, we investigated silicified Cretaceous mollusk shell pseudomorphs from Coober Pedy (South Australia) using focused ion beam (FIB)-SEM tomography, petrographic microscopy, µ-XRD, and EMPA. The shells consist of replaced calcite crystals (ionic strength remain constant throughout the replacement process, permitting continuous silica nanoparticle formation and diffusion-limited colloid aggregation. Our study provides a natural example of the transformation of an atomic crystal to an amorphous, mesoscale ordered material; thus, links the research fields of natural colloidal crystal formation, carbonate-silica replacement, and crystallization by oriented particle aggregation (CPA).

Wet chemical synthesis and magnetic properties of single crystal Co nanochains with surface amorphous passivation Co layers

Directory of Open Access Journals (Sweden)

Zhou Shao-Min

2011-01-01

Full Text Available Abstract In this study, for the first time, high-yield chain-like one-dimensional (1D Co nanostructures without any impurity have been produced by means of a solution dispersion approach under permanent-magnet. Size, morphology, component, and structure of the as-made samples have been confirmed by several techniques, and nanochains (NCs with diameter of approximately 60 nm consisting of single-crystalline Co and amorphous Co-capped layer (about 3 nm have been materialized. The as-synthesized Co samples do not include any other adulterants. The high-quality NC growth mechanism is proposed to be driven by magnetostatic interaction because NC can be reorganized under a weak magnetic field. Room-temperature-enhanced coercivity of NCs was observed, which is considered to have potential applications in spin filtering, high density magnetic recording, and nanosensors. PACS: 61.46.Df; 75.50; 81.07.Vb; 81.07.

Callus formation impedes adventitious rhizogenesis in air layers of broadleaved tree species

Directory of Open Access Journals (Sweden)

Sanjay Singh

2014-07-01

Full Text Available Callusing and root induction in air layering was evaluated aiming at evolution of procedure for mass clonal propagation of mature ortets of five tropical broadleaf species differing in their potential for adventitious root formation in shoot cuttings as: Anogiessus latifolia < Boswellia serrata < Dalbergia latifolia < Gmelina arborea < Dalbergia sissoo. Two experiments were conducted in rainy season during consecutive years; without application of growth regulators in the first year and with growth regulators (T1 - water, T2- 100 ppm indole-3-acetic acid, T3-100 ppm thiamine-HCl and T4 -combination of T2 + T3 in the next year. Air layered branches were detached from the trees to record percentage of alive airlayers, callusing and rooting (% as well as root number and root length. Response to air layering was found to be highly variable in five tree species but appeared to be feasible procedure for clonal propagation of mature ortets of B. serrata and D. sissoo with 100% (in auxin + thiamine treatment and 83.3% (in auxin treatment success, respectively. Maximum callusing (% was found in D. latifolia while no callusing was observed in D. sissoo, which is most easy-to-root among all five species. Callus formation impedes adventitious rhizogenesis in air layers as significant negative correlation of callusing (% and adventitious root formation was recorded in air layers of five tropical broadleaved tree species. Application of exogenous auxin alone or in combination with thiamine circumvents callusing to ensure direct development of roots for successful air layering.

Modeling of amorphous pocket formation in silicon by numerical solution of the heat transport equation

International Nuclear Information System (INIS)

Kovac, D.; Otto, G.; Hobler, G.

2005-01-01

In this paper we present a model of amorphous pocket formation that is based on binary collision simulations to generate the distribution of deposited energy, and on numerical solution of the heat transport equation to describe the quenching process. The heat transport equation is modified to consider the heat of melting when the melting temperature is crossed at any point in space. It is discretized with finite differences on grid points that coincide with the crystallographic lattice sites, which allows easy determination of molten atoms. Atoms are considered molten if the average of their energy and the energy of their neighbors meets the melting criterion. The results obtained with this model are in good overall agreement with published experimental data on P, As, Te and Tl implantations in Si and with data on the polyatomic effect at cryogenic temperature

Preparation and Properties of Mg-Cu-Y-Al bulk Amorphous Alloys

DEFF Research Database (Denmark)

Pryds, Nini; Eldrup, Morten Mostgaard; Ohnuma, M.

2000-01-01

Bulk amorphous (Mg(1-gamma)Al(gamma))(60)CU(30)Y(10) alloys were prepared using a relatively simple technique of rapid cooling of the melt in a copper wedge mould. The temperature vs, time was recorded during the cooling and solidification process of the melt and compared with a spacial and tempo......Bulk amorphous (Mg(1-gamma)Al(gamma))(60)CU(30)Y(10) alloys were prepared using a relatively simple technique of rapid cooling of the melt in a copper wedge mould. The temperature vs, time was recorded during the cooling and solidification process of the melt and compared with a spacial...... temperatures in specimens containing a few percent Al. The alloy with no Al crystallises apparently without the formation of nanoparticles. The critical cooling rate for the formation of an amorphous Mg(60)CU(30)Y(10) specimen was determined experimentally by a combination of DSC data and temperature vs, time...

Effect of thermal spray processing techniques on the microstructure and properties of Ni-based amorphous coatings

International Nuclear Information System (INIS)

Lee, S.M.; Moon, B.M.; Fleury, E.; Ahn, H.S.; Kim, D.H.; Kim, W.T.; Sordelet, D.J.

2005-01-01

Metallic amorphous materials have been widely developed thanks to the outstanding properties including high chemical stability, mechanical strength, and magnetic properties. However, with the exception of a few compositions, the limiting factor is the critical cooling rate for the formation of the amorphous phase. For many applications, it is only the contact surface properties that are important, thus the use, of coating techniques such as thermal sprayings has several attractive features. In this paper, we present the microstructure of Ni-based amorphous coatings prepared by laser cladding and vacuum plasma spraying. The utilization of plasma spraying to deposit atomized powder enabled the formation of fully amorphous coating, laser cladding resulted in mostly crystallized structures. Glass forming ability and wear properties of the coatings were discussed as a function of the coating microstructure. (orig.)

Effect of active layer deposition temperature on the performance of sputtered amorphous In—Ga—Zn—O thin film transistors

International Nuclear Information System (INIS)

Wu Jie; Shi Junfei; Dong Chengyuan; Chen Yuting; Zhou Daxiang; Hu Zhe; Zhan Runze; Zou Zhongfei

2014-01-01

The effect of active layer deposition temperature on the electrical performance of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) is investigated. With increasing annealing temperature, TFT performance is firstly improved and then degraded generally. Here TFTs with best performance defined as ''optimized-annealed'' are selected to study the effect of active layer deposition temperature. The field effect mobility reaches maximum at deposition temperature of 150 °C while the room-temperature fabricated device shows the best subthreshold swing and off-current. From Hall measurement results, the carrier concentration is much higher for intentional heated a-IGZO films, which may account for the high off-current in the corresponding TFT devices. XPS characterization results also reveal that deposition temperature affects the atomic ratio and O1s spectra apparently. Importantly, the variation of field effect mobility of a-IGZO TFTs with deposition temperature does not coincide with the tendencies in Hall mobility of a-IGZO thin films. Based on the further analysis of the experimental results on a-IGZO thin films and the corresponding TFT devices, the trap states at front channel interface rather than IGZO bulk layer properties may be mainly responsible for the variations of field effect mobility and subthreshold swing with IGZO deposition temperature. (semiconductor devices)

Textured strontium titanate layers on platinum by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Blomberg, T., E-mail: tom.blomberg@asm.com [ASM Microchemistry Ltd., Vaeinoe Auerin katu 12 A, 00560 Helsinki (Finland); Anttila, J.; Haukka, S.; Tuominen, M. [ASM Microchemistry Ltd., Vaeinoe Auerin katu 12 A, 00560 Helsinki (Finland); Lukosius, M.; Wenger, Ch. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Saukkonen, T. [Aalto University, Puumiehenkuja 3, 02150 Espoo (Finland)

2012-08-31

Formation of textured strontium titanate (STO) layers with large lateral grain size (0.2-1 {mu}m) and low X-ray reflectivity roughness ({approx} 1.36 nm) on Pt electrodes by industry proven atomic layer deposition (ALD) method is demonstrated. Sr(t-Bu{sub 3}Cp){sub 2}, Ti(OMe){sub 4} and O{sub 3} precursors at 250 Degree-Sign C were used to deposit Sr rich STO on Pt/Ti/SiO{sub 2}/Si Empty-Set 200 mm substrates. After crystallization post deposition annealing at 600 Degree-Sign C in air, most of the STO grains showed a preferential orientation of the {l_brace}001{r_brace} plane parallel to the substrate surface, although other orientations were also present. Cross sectional and plan view transmission electron microscopy and electron diffraction analysis revealed more than an order of magnitude larger lateral grain sizes for the STO compared to the underlying multicrystalline {l_brace}111{r_brace} oriented platinum electrode. The combination of platinum bottom electrodes with ALD STO(O{sub 3}) shows a promising path towards the formation of single oriented STO film. - Highlights: Black-Right-Pointing-Pointer Amorphous strontium titanate (STO) on platinum formed a textured film after annealing. Black-Right-Pointing-Pointer Single crystal domains in 60 nm STO film were 0.2-1 {mu}m wide. Black-Right-Pointing-Pointer Most STO grains were {l_brace}001{r_brace} oriented.

Tungsten oxide nanowires grown on amorphous-like tungsten films

International Nuclear Information System (INIS)

Dellasega, D; Pezzoli, A; Russo, V; Passoni, M; Pietralunga, S M; Nasi, L; Conti, C; Vahid, M J; Tagliaferri, A

2015-01-01

Tungsten oxide nanowires have been synthesized by vacuum annealing in the range 500–710 °C from amorphous-like tungsten films, deposited on a Si(100) substrate by pulsed laser deposition (PLD) in the presence of a He background pressure. The oxygen required for the nanowires formation is already adsorbed in the W matrix before annealing, its amount depending on deposition parameters. Nanowire crystalline phase and stoichiometry depend on annealing temperature, ranging from W_1_8O_4_9-Magneli phase to monoclinic WO_3. Sufficiently long annealing induces the formation of micrometer-long nanowires, up to 3.6 μm with an aspect ratio up to 90. Oxide nanowire growth appears to be triggered by the crystallization of the underlying amorphous W film, promoting their synthesis at low temperatures. (paper)

FEM numerical analysis of excimer laser induced modification in alternating multi-layers of amorphous and nano-crystalline silicon films

Energy Technology Data Exchange (ETDEWEB)

Conde, J.C., E-mail: jconde@uvigo.es [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Martin, E. [Dpto. Mecanica, Maquinas, Motores Termicos y Fluidos, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Stefanov, S. [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain); Alpuim, P. [Departamento de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Chiussi, S. [Dpto. Fisica Aplicada, Universidade de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain)

2012-09-15

Highlights: Black-Right-Pointing-Pointer nc-Si:H is a material with growing importance for a large-area of nano-electronic, photovoltaic or biomedical devices. Black-Right-Pointing-Pointer UV-ELA technique causes a rapid heating that provokes the H{sub 2} desorption from the Si surface and bulk material. Black-Right-Pointing-Pointer Next, diffusion of P doped nc-Si films and eventually, for high energy densities would be possible to reach the melting point. Black-Right-Pointing-Pointer These multilayer structures consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) films deposited on SiO{sub 2}. Black-Right-Pointing-Pointer To optimize parameters involved in this processing, FEM numerical analysis of multilayer structures have been performed. Black-Right-Pointing-Pointer The numerical results are compared with exhaustive characterization of the experimental results. - Abstract: UV excimer laser annealing (UV-ELA) is an alternative annealing process that, during the last few years, has gained enormous importance for the CMOS nano-electronic technologies, with the ability to provide films and alloys with electrical and optical properties to fit the desired device performance. The UV-ELA of amorphous (a-) and/or doped nano-crystalline (nc-) silicon films is based on the rapid (nanoseconds) formation of temperature profiles caused by laser radiation that is absorbed in the material and lead to crystallisation, diffusion in solid or even in liquid phase. To achieve the desired temperature profiles and to optimize the parameters involved in the processing of hydrogenated nanocrystalline silicon (nc-Si:H) films with the UV-ELA, a numerical analysis by finite element method (FEM) of a multilayer structure has been performed. The multilayer structures, consisting of thin alternating a-Si:H(10 nm) and n-doped nc-Si:H(60 nm) layers, deposited on a glass substrate, has also been experimentally analyzed. Temperature profiles caused by 193 nm radiation with 25

Phase transitions during formation of Ag nanoparticles on In{sub 2}S{sub 3} precursor layers

Energy Technology Data Exchange (ETDEWEB)

Liu, Yang, E-mail: yang.liu@helmholtz-berlin.de; Fu, Yanpeng; Dittrich, Thomas; Sáez-Araoz, Rodrigo; Schmid, Martina; Hinrichs, Volker; Lux-Steiner, Martha Ch.; Fischer, Christian-Herbert

2015-09-01

Phase transitions have been investigated for silver deposition onto In{sub 2}S{sub 3} precursor layers by spray chemical vapor deposition from a trimethylphosphine (hexafluoroacetylacetonato) silver (Ag(hfacac)(PMe{sub 3})) solution. The formation of Ag nanoparticles (Ag NPs) on top of the semiconductor layer set on concomitant with the formation of AgIn{sub 5}S{sub 8}. The increase of the diameter of Ag NPs was accompanied by the evolution of orthorhombic AgInS{sub 2}. The formation of Ag{sub 2}S at the interface between Ag NPs and the semiconductor layer was observed. Surface photovoltage spectroscopy indicated charge separation and electronic transitions in the ranges of corresponding band gaps. The phase transition approach is aimed to be applied for the formation of plasmonic nanostructures on top of extremely thin semiconducting layers. - Highlights: • Silver nanoparticles were deposited onto In{sub 2}S{sub 3} precursor layer by spray pyrolysis. • The silver nanoparticle size and density could be controlled by deposition time. • Phase transitions during deposition and material properties were investigated. • The layers still show semiconducting properties after phase transitions. • Plasmonic absorption enhancement has been demonstrated.

Synthesis and crytallization of amorphous In-Te alloys

International Nuclear Information System (INIS)

Vengrenovich, R.D.; Lopatnyuk, I.A.; Mikhal'chenko, V.P.; Kasiyan, I.M.; Geshko, E.I.

1988-01-01

Tendency of Te-In alloys with indium content from 5 to 40 % to amorphization is investigated. It is marked that in this interval of concentrations the alloys have the tendency to subcooling even at cooling velocities equalling only 0.2-0.3 K/s. Maximal subcooling ΔT=70 deg takes place for the eutectic composition. Tendency of Te-In alloys to vitrification is explained by the character to interatomic interactions in a liquid, the interactions promote the formation of molecular clusters in it in cooling, that leads to fast increase of viscosity and to increase of T g amorphization temperature

Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.

Science.gov (United States)

Shin, Kwan Yup; Tak, Young Jun; Kim, Won-Gi; Hong, Seonghwan; Kim, Hyun Jae

2017-04-19

In this research, nitrocellulose is proposed as a new material for the passivation layers of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The a-IGZO TFTs with nitrocellulose passivation layers (NC-PVLs) demonstrate improved electrical characteristics and stability. The a-IGZO TFTs with NC-PVLs exhibit improvements in field-effect mobility (μ FE ) from 11.72 ± 1.14 to 20.68 ± 1.94 cm 2 /(V s), threshold voltage (V th ) from 1.85 ± 1.19 to 0.56 ± 0.35 V, and on/off current ratio (I on/off ) from (5.31 ± 2.19) × 10 7 to (4.79 ± 1.54) × 10 8 compared to a-IGZO TFTs without PVLs, respectively. The V th shifts of a-IGZO TFTs without PVLs, with poly(methyl methacrylate) (PMMA) PVLs, and with NC-PVLs under positive bias stress (PBS) test for 10,000 s represented 5.08, 3.94, and 2.35 V, respectively. These improvements were induced by nitrogen diffusion from NC-PVLs to a-IGZO TFTs. The lone-pair electrons of diffused nitrogen attract weakly bonded oxygen serving as defect sites in a-IGZO TFTs. Consequently, the electrical characteristics are improved by an increase of carrier concentration in a-IGZO TFTs, and a decrease of defects in the back channel layer. Also, NC-PVLs have an excellent property as a barrier against ambient gases. Therefore, the NC-PVL is a promising passivation layer for next-generation display devices that simultaneously can improve electrical characteristics and stability against ambient gases.

Amorphous and crystalline TiO2 nanotube arrays for enhanced Li-ion intercalation properties.

Science.gov (United States)

Guan, Dongsheng; Cai, Chuan; Wang, Ying

2011-04-01

We have employed a simple process of anodizing Ti foils to prepare TiO2 nanotube arrays which show enhanced electrochemical properties for applications as Li-ion battery electrode materials. The lengths and pore diameters of TiO2 nanotubes can be finely tuned by varying voltage, electrolyte composition, or anodization time. The as-prepared nanotubes are amorphous and can be converted into anatase nanotubes with heat treatment at 480 degrees C. Rutile crystallites emerge in the anatase nanotube when the annealing temperature is increased to 580 degrees C, resulting in TiO2 nanotubes of mixed phases. The morphological features of nanotubes remain unchanged after annealing. Li-ion insertion performance has been studied for amorphous and crystalline TiO2 nanotube arrays. Amorphous nanotubes with a length of 3.0 microm and an outer diameter of 125 nm deliver a capacity of 91.2 microA h cm(-2) at a current density of 400 microA cm(-2), while those with a length of 25 microm and an outer diameter of 158 nm display a capacity of 533 microA h cm-2. When the 3-microm long nanotubes become crystalline, they deliver lower capacities: the anatase nanotubes and nanotubes of mixed phases show capacities of 53.8 microA h cm-2 and 63.1 microA h cm(-2), respectively at the same current density. The amorphous nanotubes show excellent capacity retention ability over 50 cycles. The cycled nanotubes show little change in morphology compared to the nanotubes before electrochemical cycling. All the TiO2 nanotubes demonstrate higher capacities than amorphous TiO2 compact layer reported in literature. The amorphous TiO2 nanotubes with a length of 1.9 microm exhibit a capacity five times higher than that of TiO2 compact layer even when the nanotube array is cycled at a current density 80 times higher than that for the compact layer. These results suggest that anodic TiO2 nanotube arrays are promising electrode materials for rechargeable Li-ion batteries.

ANTIMONY INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON

Institute of Scientific and Technical Information of China (English)

Y. Wang; H.Z. Li; C.N. Yu; G.M. Wu; I. Gordon; P. Schattschneider; O. Van Der Biest

2007-01-01

Antimony induced crystallization of PVD (physics vapor deposition) amorphous silicon can be observed on sapphire substrates. Very large crystalline regions up to several tens of micrometers can be formed. The Si diffraction patterns of the area of crystallization can be observed with TEM (transmission electron microscopy). Only a few and much smaller crystals of the order of 1μm were formed when the antimony layer was deposited by MBE(molecular beam epitaxy) compared with a layer formed by thermal evaporation. The use of high vacuum is essential in order to observe any Sb induced crystallization at all. In addition it is necessary to take measures to limit the evaporation of the antimony.

Deformation behavior of an electrodeposited nano-Ni/amorphous Fe78Si9B13 laminated composite sheet

Directory of Open Access Journals (Sweden)

Zhang Kaifeng

2015-01-01

Full Text Available A nano-Ni/amorphous Fe78Si9B13 composite sheet was prepared in the form of three-ply (Ni-Fe78Si9B13-Ni laminated structure by an electrodeposition method. The average grain size of Ni layers is about 50 nm. The interface of laminated composite was investigated with SEM equipped with energy dispersive scanning (EDS and line analysis technique. The laminated composite has a good interfacial bonding between amorphous layer and nano-Ni layers due to the mutual diffusion of atoms in Fe78Si9B13 and Ni layers during the process of electrodeposition. A maximum elongation of 115.5% was obtained when the volume fraction of nano-Ni layers (VNi was 0.77, which is greatly higher than that of monolithic amorphous Fe78Si9B13 ribbon (36.3% tested under the same conditions. Bulging tests were carried out to evaluate plastic forming properties of the Fe78Si9B13/Ni laminated composite. Under the condition of 450 °C, 4.0 MPa and 30 min, a good bulging part with the relative bulging height (RBH of 0.4 was obtained.

Light scattering of thin azobenzene side-chain polyester layers

DEFF Research Database (Denmark)

Kerekes, Á.; Lörincz, E.; Ramanujam, P.S.

2002-01-01

Light scattering properties of liquid crystalline and amorphous azobenzene side-chain polyester layers used for optical data storage were examined by means of transmissive scatterometry. Comparative experiments show that the amorphous polyester has significantly lower light scattering...... characteristics than the liquid crystalline polyester. The amorphous samples have negligible polarization part orthogonal to the incident beam. the liquid crystalline samples have relative high orthogonal polarization part in light scattering, The light scattering results can be used to give a lower limit...... for the domain size in thin liquid crystalline polyester layers being responsible for the dominant light scattering. The characteristic domain Sizes obtained from the Fourier transformation of polarization microscopic Pictures confirm these values....

Experimental Investigation of White Layer formation in Hard Turning

Science.gov (United States)

Umbrello, D.; Rotella, G.; Crea, F.

2011-05-01

Hard turning with super hard cutting tools, like PCBN or Ceramics inserts, represents an interesting advance in the manufacturing industry, regarding the finishing of hardened steels. This innovative machining technique is considered an attractive alternative to traditional finish grinding operations because of the high flexibility, the ability to achieve higher metal removal rates, the possibility to operate without the use of coolants, and the capability to achieve comparable workpiece quality. However, the surface integrity effects of hard machining need to be taken into account due to their influence on the life of machined components. In particular, the formation of a usually undesirable white layer at the surface needs further investigation. Three different mechanisms have been proposed as main responsible of the white layer genesis: (i) microstructural phase transformation due to a rapid heating and quenching, (ii) severe plastic deformation resulting in a homogenous structure and/or a very fine grain size microstructure; (iii) surface reaction with the environment. In this research, an experimental campaign was carried out and several experimental techniques were used in order to analyzed the machined surface and to understand which of the above mentioned theories is the main cause of the white layer formation when AISI 52100 hardened steel is machined by PCBN inserts. In particular, the topography characterization has obtained by means of optical and scanning electron microscope (SEM) while microstructural phase composition and chemical characterization have been respectively detected using X-ray Diffraction (XRD) and Energy-dispersive X-ray spectroscopy (EDS) techniques. The results prove that the white layer is the result of microstructural alteration, i.e. the generation of a martensitic structure.

Amorphous transparent conducting oxides in context: Work function survey, trends, and facile modification

Science.gov (United States)

Yeh, T. C.; Zhu, Q.; Buchholz, D. B.; Martinson, A. B.; Chang, R. P. H.; Mason, T. O.

2015-03-01

The work functions of various amorphous and crystalline transparent conducting oxides (TCOs) were measured using Kelvin probe. The films, made by pulsed laser deposition, exhibited varying work functions dependent on the composition and deposition parameters. Tin oxide showed the largest work functions of the oxides measured, while zinc oxide showed the lowest. Binary and ternary combinations of the basis TCOs showed intermediate work functions dependent on the endpoint components. Amorphous TCOs, important in OPV and other technological applications, exhibited similar work functions to their crystalline counterparts. UV/ozone treatment of TCOs temporarily increased the work function, consistent with proposed defect mechanisms associated with near-surface changes in carrier content and Fermi level. Finally, a method for facile adjustment of the work function of commercial TCOs by atomic layer deposition (ALD) capping layers was presented, illustrated by the growth of zinc oxide layers on commercial crystalline ITO films.

Growth of amorphous Zn–Sn–O thin films by RF sputtering for buffer layers of CuInSe2 and SnS solar cells

International Nuclear Information System (INIS)

Chang, Shao-Wei; Ishikawa, Kaoru; Sugiyama, Mutsumi

2015-01-01

We propose using amorphous Zn–Sn–O (α-ZTO) deposited by RF sputtering as an alternative n-type buffer layer for Cu(In,Ga)Se 2 and SnS solar cells. The order of the carrier density, n, is increased from the order of 10 15 to 10 17 cm −1 as the Sn/(Sn + Zn) atomic ratio increases from 0.29 to 0.40. On the other hand, the order of n decreased from 10 17 to 10 11 cm −1 as the oxygen partial pressure increased from 0 to 10%. Further, for the α-ZTO film with the Sn/(Sn + Zn) atomic ratio at 0.38 and the oxygen partial pressure at 0%, valence band discontinuities of α-ZTO/CuInSe 2 and α-ZTO/SnS were determined using photoelectron yield spectroscopy measurements. The band discontinuities of each of these interfaces form a spike structure in the conduction band offset, which enables a high-performance solar cell to be obtained. - Highlights: • We propose using amorphous Zn–Sn–O as a n-type layer for Cu(In,Ga)Se 2 and SnS solar cells. • The carrier density was controlled by total and/or oxygen partial pressure during sputtering. • Valence band discontinuities of Zn–Sn–O/CuInSe 2 and Zn–Sn–O/SnS were determined. • The conduction band discontinuities of each of these interfaces form a spike structure

Amorphous Silica-Promoted Lysine Dimerization: a Thermodynamic Prediction

Science.gov (United States)

Kitadai, Norio; Nishiuchi, Kumiko; Nishii, Akari; Fukushi, Keisuke

2018-03-01

It has long been suggested that mineral surfaces played a crucial role in the abiotic polymerization of amino acids that preceded the origin of life. Nevertheless, it remains unclear where the prebiotic process took place on the primitive Earth, because the amino acid-mineral interaction and its dependence on environmental conditions have yet to be understood adequately. Here we examined experimentally the adsorption of L-lysine (Lys) and its dimer (LysLys) on amorphous silica over a wide range of pH, ionic strength, adsorbate concentration, and the solid/water ratio, and determined the reaction stoichiometries and the equilibrium constants based on the extended triple-layer model (ETLM). The retrieved ETLM parameters were then used, in combination with the equilibrium constant for the peptide bond formation in bulk water, to calculate the Lys-LysLys equilibrium in the presence of amorphous silica under various aqueous conditions. Results showed that the silica surface favors Lys dimerization, and the influence varies greatly with changing environmental parameters. At slightly alkaline pH (pH 9) in the presence of a dilute NaCl (1 mM), the thermodynamically attainable LysLys from 0.1 mM Lys reached a concentration around 50 times larger than that calculated without silica. Because of the versatility of the ETLM, which has been applied to describe a wide variety of biomolecule-mineral interactions, future experiments with the reported methodology are expected to provide a significant constraint on the plausible geological settings for the condensation of monomers to polymers, and the subsequent chemical evolution of life.

Compaction of amorphous iron–boron powder

DEFF Research Database (Denmark)

Hendriksen, Peter Vang; Mørup, Steen; Koch, Christian

1993-01-01

Large scale practical use of bulk amorphous alloys requires the capability of molding the material to a desired design, for instance by compaction of an amorphous powder. This is a difficult task because the sintering temperature is limited by the crystallization temperature of the alloy.1 Here we......, should facilitate a compaction. The passivation layer, however, impedes a compaction. Isostatic pressing at 540 K at a pressure of 200 MPa clearly illustrated this; pellets pressed from passivated powder were much more brittle than pellets pressed from unpassivated powder. The density of the pellets...... was very low ([approximately-equal-to]25% of the density of bulk FeB). We have designed a die for uniaxial pressing in which the compaction can be performed without exposing the powder to air and have obtained densities larger than 60% of that of bulk FeB. We have reported studies of the dependence...

Enzyme-assisted growth of nacreous CaCO3/polymer hybrid nanolaminates via the formation of mineral bridges

Science.gov (United States)

Yeom, Bongjun; Char, Kookheon

2016-06-01

Laminated nanostructures in nacre have been adopted as models in the fabrication of strong, tough synthetic nanocomposites. However, the utilization of CaCO3 biominerals in these composites is limited by the complexity of the synthesis method for nanosized biominerals. In this study, we use the enzymatic reaction of urease to generate a nanoscale CaCO3 thin film to prepare CaCO3/polymer hybrid nanolaminates. Additional layers of CaCO3 thin film are consecutively grown over the base CaCO3 layer with the intercalation of organic layers. The morphology and crystallinity of the added CaCO3 layers depend strongly on the thickness of the organic layer coated on the underlying CaCO3 layer. When the organic layer is less than 20 nm thick, the amorphous CaCO3 layer is spontaneously transformed into crystalline calcite layer during the growth process. We also observe crystalline continuity between adjacent CaCO3 layers through interconnecting mineral bridges. The formation of these mineral bridges is crucial to the epitaxial growth of CaCO3 layers, similar to the formation of natural nacre.

Distortion of Local Atomic Structures in Amorphous Ge-Sb-Te Phase Change Materials

Science.gov (United States)

Hirata, A.; Ichitsubo, T.; Guan, P. F.; Fujita, T.; Chen, M. W.

2018-05-01

The local atomic structures of amorphous Ge-Sb-Te phase-change materials have yet to be clarified and the rapid crystal-amorphous phase change resulting in distinct optical contrast is not well understood. We report the direct observation of local atomic structures in amorphous Ge2Sb2Te5 using "local" reverse Monte Carlo modeling dedicated to an angstrom-beam electron diffraction analysis. The results corroborated the existence of local structures with rocksalt crystal-like topology that were greatly distorted compared to the crystal symmetry. This distortion resulted in the breaking of ideal octahedral atomic environments, thereby forming local disordered structures that basically satisfied the overall amorphous structure factor. The crystal-like distorted octahedral structures could be the main building blocks in the formation of the overall amorphous structure of Ge-Sb-Te.

Formation of anodic layers on InAs (111)III. Study of the chemical composition

Energy Technology Data Exchange (ETDEWEB)

Valisheva, N. A., E-mail: valisheva@thermo.isp.nsc.ru; Tereshchenko, O. E. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Prosvirin, I. P.; Kalinkin, A. V. [Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation); Goljashov, V. A. [Novosibirsk State University (Russian Federation); Levtzova, T. A. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Bukhtiyarov, V. I. [Russian Academy of Sciences, Boreskov Institute of Catalysis, Siberian Branch (Russian Federation)

2012-04-15

The chemical composition of {approx}20-nm-thick anodic layers grown on InAs (111)III in alkaline and acid electrolytes containing or not containing NH{sub 4}F is studied by X-ray photoelectron spectroscopy. It is shown that the composition of fluorinated layers is controlled by the relation between the concentrations of fluorine and hydroxide ions in the electrolyte and by diffusion processes in the growing layer. Fluorine accumulates at the (anodic layer)/InAs interface. Oxidation of InAs in an acid electrolyte with a low oxygen content and a high NH{sub 4}F content brings about the formation of anodic layers with a high content of fluorine and elemental arsenic and the formation of an oxygen-free InF{sub x}/InAs interface. Fluorinated layers grown in an alkaline electrolyte with a high content of O{sup 2-} and/or OH{sup -} groups contain approximately three times less fluorine and consist of indium and arsenic oxyfluorides. No distinction between the compositions of the layers grown in both types of fluorine-free electrolytes is established.

Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate

Science.gov (United States)

Findikoglu, Alp T [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM; Arendt, Paul N [Los Alamos, NM; Matias, Vladimir [Santa Fe, NM; Choi, Woong [Los Alamos, NM

2009-10-27

A template article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material; is provided, together with a semiconductor article including a base substrate including: (i) a base material selected from the group consisting of polycrystalline substrates and amorphous substrates, and (ii) at least one layer of a differing material upon the surface of the base material; and, a buffer material layer upon the base substrate, the buffer material layer characterized by: (a) low chemical reactivity with the base substrate, (b) stability at temperatures up to at least about 800.degree. C. under low vacuum conditions, and (c) a lattice crystal structure adapted for subsequent deposition of a semiconductor material, and, a top-layer of semiconductor material upon the buffer material layer.

An in situ XPS study of growth of ITO on amorphous hydrogenated Si: Initial stages of heterojunction formation upon processing of ITO/a-Si:H based solar cell structures

Energy Technology Data Exchange (ETDEWEB)

Diplas, Spyros; Thoegersen, Annett; Ulyashin, Alexander [SINTEF Materials and Chemistry, Oslo (Norway); Romanyuk, Andriy [University of Basel, Basel (Switzerland)

2015-01-01

In this work we studied the interface growth upon deposition of indium-tin oxide (ITO) on amorphous hydrogenated Si (a-Si:H)/crystalline Si (c-Si) structures. The analysis methods used were X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) in combination with in situ film growth with magnetron sputtering. The analysis was complemented with transmission electron microscopy (TEM) of the deposited films. The sputtering equipment was attached to the XPS spectrometer and hence early stage film growth was observed without breaking the vacuum. It was shown that during early deposition stages ITO is reduced by a-Si:H. The reduction is accompanied with formation of metallic In and Sn at the interface. Formation of Sn is more enhanced on a-Si substrates whilst formation of In is more dominant on c-Si substrates. The reduction effect is less intense for amorphous hydrogenated Si as compared to crystalline Si and this is attributed to stronger presence of dangling bonds in the latter than the former. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Amorphous carbon enhancement of hydrogen penetration into UO2

International Nuclear Information System (INIS)

Zalkind, S.; Shamir, N.; Gouder, T.; Akhvlediani, R.; Hoffman, A.

2014-01-01

In a previous study, it was demonstrated that an amorphous carbon layer, deposited on a native oxide covered uranium surface, significantly enhances the interaction of hydrogen with the uranium metal. Fig. 1[2], demonstrates the preferential hydrogen attack (forming uranium hydride) on the carbon covered area of the naturally oxidized uranium metal

Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

Science.gov (United States)

Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

2003-06-01

White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

A novel synthesis method for large area metallic amorphous/nanocrystal films by the glow-discharge plasma technique

International Nuclear Information System (INIS)

Xu Jiang; Xu Zhong; Tao Jie; Liu Zili; Chen Zheyuan; Zhu Wenhui

2007-01-01

Two large-area metallic amorphous/nanocrystal films were prepared on AZ31 magnesium alloy and pure iron substrates by the double glow-discharge plasma technique. The formation mechanism of the novel amorphous films did not follow the established empirical rules for large glass-forming ability. The amorphous films were composed of binary alloys with a difference in the atomic diameter of alloying constituents of less than 12%, and an amorphous film of pure iron was successfully obtained

Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors

Science.gov (United States)

Corsino, Dianne C.; Bermundo, Juan Paolo S.; Fujii, Mami N.; Takahashi, Kiyoshi; Ishikawa, Yasuaki; Uraoka, Yukiharu

2018-06-01

Atomic layer deposition (ALD) of Al2O3 using dimethylaluminum hydride (DMAH) was demonstrated as an effective passivation for amorphous InGaZnO thin-film transistors (TFTs). Compared with the most commonly used precursor, trimethylaluminum, TFTs fabricated with DMAH showed improved stability, resulting from the lower amount of oxygen vacancies, and hence fewer trap sites, as shown by X-ray photoelectron spectroscopy (XPS) depth profiling analysis. We found that prolonged plasma exposure during ALD can eliminate the hump phenomenon, which is only present for DMAH. The higher Al2O3 deposition rate when using DMAH is in line with the requirements of emerging techniques, such as spatial ALD, for improving fabrication throughput.

Amorphous silicon based radiation detectors

International Nuclear Information System (INIS)

Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D.; Fujieda, I.; Street, R.A.

1991-07-01

We describe the characteristics of thin(1 μm) and thick (>30μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs

A Molecular-Level View of the Physical Stability of Amorphous Solid Dispersions

Science.gov (United States)

Yuan, Xiaoda

Many pharmaceutical compounds being developed in recent years are poorly soluble in water. This has led to insufficient oral bioavailability of many compounds in vitro. The amorphous formulation is one of the promising techniques to increase the oral bioavailability of these poorly water-soluble compounds. However, an amorphous drug substance is inherently unstable because it is a high energy form. In order to increase the physical stability, the amorphous drug is often formulated with a suitable polymer to form an amorphous solid dispersion. Previous research has suggested that the formation of an intimately mixed drug-polymer mixture contributes to the stabilization of the amorphous drug compound. The goal of this research is to better understand the role of miscibility, molecular interactions and mobility on the physical stability of amorphous solid dispersions. Methods were developed to detect different degrees of miscibility on nanometer scale and to quantify the extent of hydrogen-bonding interactions between the drug and the polymer. Miscibility, hydrogen-bonding interactions and molecular mobility were correlated with physical stability during a six-month period using three model systems. Overall, this research provides molecular-level insights into many factors that govern the physical stability of amorphous solid dispersions which can lead to a more effective design of stable amorphous formulations.

Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

Directory of Open Access Journals (Sweden)

Taweewat Krajangsang

2014-01-01

Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

Radiation amorphization of materials

International Nuclear Information System (INIS)

Neklyudov, I.M.; Chernyaeva, T.P.

1993-01-01

The results of experimental and theoretical research on radiation amorphization are presented in this analytical review. Mechanism and driving forces of radiation amorphization are described, kinetic and thermodynamic conditions of amorphization are formulated. Compositional criteria of radiation amorphization are presented, that allow to predict irradiation behaviour of materials, their tendency to radiation amorphization. Mechanism of transition from crystalline state to amorphous state are considered depending on dose, temperature, structure of primary radiation damage and flux level. (author). 134 refs., 4 tab., 25 fig

Amorphous phase formation in intermetallic Mg2Ni alloy synthesized by ethanol wet milling

International Nuclear Information System (INIS)

Wang, H.-W.; Chyou, S.-D.; Wang, S.-H.; Yang, M.-W.; Hsu, C.-Y.; Tien, H.-C.; Huang, N.-N.

2009-01-01

The hydriding/dehydriding properties of an intermetallic Mg 2 Ni alloy synthesized by wet ball milling in ethanol have been investigated. The appearance of the particle surface after different milling methods is one obvious difference. The alloyed powders prepared by either dry milling or wet milling under ethanol were characterized for phase content by X-ray diffractometer (XRD). The results show that two broad diffuse peaks, which are an ionic-organic-Mg amorphous material, appear in addition to the nickel element peaks. This unexpected amorphous phase has the special hydrogen absorbing/desorbing features.

Methods of amorphization and investigation of the amorphous state

OpenAIRE

EINFALT, TOMAŽ; PLANINŠEK, ODON; HROVAT, KLEMEN

2013-01-01

The amorphous form of pharmaceutical materials represents the most energetic solid state of a material. It provides advantages in terms of dissolution rate and bioavailability. This review presents the methods of solid-state amorphization described in literature (supercooling of liquids, milling, lyophilization, spray drying, dehydration of crystalline hydrates), with the emphasis on milling. Furthermore, we describe how amorphous state of pharmaceuticals differ depending on method of prepara...

Production and properties of light-metal base amorphous alloys

International Nuclear Information System (INIS)

Inoue, Akihisa; Masumoto, Tsuyoshi

1993-01-01

Light-metal base alloys with high specific strength and good corrosion resistance were produced through amorphization of Al and Mg-based alloys. The amorphous phase is formed in rapidly solidified Al-TM-Ln and Mg-TM-Ln (TM=transition metal, Ln=lanthanide metal) alloys. The highest tensile strength (σ f ) reaches 1,330 MPa for the Al base and 830 MPa for the Mg base. Furthermore, the Mg-based alloys have a large glass-forming capacity which enables to produce an amorphous phase by a metallic mold casting method. The extrusion of the Al-based amorphous powders at temperatures above crystallization temperature caused the formation of high strength materials with finely mixed structure consisting of dispersed intermetallic compounds in an Al matrix. The highest values of σ f and fatigue limit are as high as 940 and 313 MPa, respectively, at room temperature and 520 and 165 MPa at 473 K. The extruded Al-Ni-Mm alloy has already been used as machine parts and subsequent further development as practical materials is expected by taking these advantages

Enhanced thermoelectric performance of amorphous Nb based oxynitrides

Science.gov (United States)

Music, Denis; Geyer, Richard W.; Hans, Marcus

2015-12-01

Using density functional theory, amorphous Nb0.27Ru0.06O0.56N0.10 was designed to facilitate a combination of an enhanced Seebeck coefficient and low electrical resistivity. Based on a positive Cauchy pressure, ductile behavior is expected. To verify these predictions, the transport and mechanical properties of amorphous thin films were evaluated. Metallic electrical resistivity and the Seebeck coefficient of -94 μV K-1 are obtained, which is consistent with our predictions. As there is no crack formation, these samples can be perceived as ductile. We demonstrate that the power factor can be increased by an order of magnitude, while keeping the thermal fatigue low.

New Theories on Boundary Layer Transition and Turbulence Formation

Directory of Open Access Journals (Sweden)

Chaoqun Liu

2012-01-01

Full Text Available This paper is a short review of our recent DNS work on physics of late boundary layer transition and turbulence. Based on our DNS observation, we propose a new theory on boundary layer transition, which has five steps, that is, receptivity, linear instability, large vortex structure formation, small length scale generation, loss of symmetry and randomization to turbulence. For turbulence generation and sustenance, the classical theory, described with Richardson's energy cascade and Kolmogorov length scale, is not observed by our DNS. We proposed a new theory on turbulence generation that all small length scales are generated by “shear layer instability” through multiple level ejections and sweeps and consequent multiple level positive and negative spikes, but not by “vortex breakdown.” We believe “shear layer instability” is the “mother of turbulence.” The energy transferring from large vortices to small vortices is carried out by multiple level sweeps, but does not follow Kolmogorov's theory that large vortices pass energy to small ones through vortex stretch and breakdown. The loss of symmetry starts from the second level ring cycle in the middle of the flow field and spreads to the bottom of the boundary layer and then the whole flow field.

The Taxonomy of Blue Amorphous Galaxies. II. Structure and Evolution

Science.gov (United States)

Marlowe, Amanda T.; Meurer, Gerhardt R.; Heckman, Timothy M.

1999-09-01

Dwarf galaxies play an important role in our understanding of galaxy formation and evolution, and starbursts are believed to affect the structure and evolution of dwarf galaxies strongly. We have therefore embarked on a systematic study of 12 of the nearest dwarf galaxies thought to be undergoing bursts of star formation. These were selected primarily by their morphological type (blue ``amorphous'' galaxies). We show that these blue amorphous galaxies are not physically distinguishable from dwarfs selected as starbursting by other methods, such as blue compact dwarfs (BCDs) and H II galaxies. All these classes exhibit surface brightness profiles that are exponential in the outer regions (r>~1.5re) but often have a predominantly central blue excess, suggesting a young burst in an older, redder galaxy. Typically, the starbursting ``cores'' are young (~107-108 yr) events compared to the older (~109-1010 yr) underlying galaxy (the ``envelope''). The ratio of the core to envelope in blue light ranges from essentially zero to about 2. These starbursts are therefore modest events involving only a few percent of the stellar mass. The envelopes have surface brightnesses that are much higher than typical dwarf irregular (dI) galaxies, so it is unlikely that there is a straightforward evolutionary relation between typical dIs and dwarf starburst galaxies. Instead we suggest that amorphous galaxies may repeatedly cycle through starburst and quiescent phases, corresponding to the galaxies with strong and weak/absent cores, respectively. Once amorphous galaxies use up the available gas (either through star formation or galactic winds) so that star formation is shut off, the faded remnants would strongly resemble dwarf elliptical galaxies. However, in the current cosmological epoch, this is evidently a slow process that is the aftermath of a series of many weak, recurring bursts. Present-day dE's must have experienced more rapid and intense evolution than this in the distant past.

Bringing nanomagnetism to the mesoscale with artificial amorphous structures

Science.gov (United States)

Muscas, G.; Brucas, R.; Jönsson, P. E.

2018-05-01

In the quest for materials with emergent or improved properties, an effective route is to create artificial superstructures. Novel properties emerge from the coupling between the phases, but the strength of this coupling depends on the quality of the interfaces. Atomic control of crystalline interfaces is notoriously complicated and to elude that obstacle, we suggest here an all-amorphous design. Starting from a model amorphous iron alloy, we locally tune the magnetic behavior by creating boron-doped regions by means of ion implantation through a lithographic mask. This process preserves the amorphous environment, creating a non-topographic magnetic superstructure with smooth interfaces and no structural discontinuities. The absence of inhomogeneities acting as pinning centers for the magnetization reversal is demonstrated by the formation of magnetic vortexes for ferromagnetic disks as large as 20 µm in diameter embedded within a paramagnetic matrix. Rigid exchange coupling between two amorphous ferromagnetic phases in a microstructured sample is evidenced by an investigation involving first-order reversal curves. The sample consists of a soft matrix with embedded elements constituting a hard phase where the anisotropy originates from an elongated shape of the elements. We provide an intuitive explanation for the micrometer-range exchange coupling mechanism and discuss how to tailor the properties of all-amorphous superstructures.

Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

International Nuclear Information System (INIS)

Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D.; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M.; Bednarcik, J.; Michalikova, J.

2015-01-01

Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O 2 atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al 2 O 3 formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO 2 at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al 2 O 3 with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds

Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

Energy Technology Data Exchange (ETDEWEB)

Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D., E-mail: music@mch.rwth-aachen.de; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Bednarcik, J.; Michalikova, J. [Deutsches Elektronen Synchrotron DESY, FS-PE group, Notkestrasse 85, D-22607 Hamburg (Germany)

2015-01-14

Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O{sub 2} atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al{sub 2}O{sub 3} formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO{sub 2} at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al{sub 2}O{sub 3} with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds.

Indium Gallium Zinc Oxide: Phase Formation and Crystallization Kinetics during Millisecond Laser Spike Annealing

Science.gov (United States)

Lynch, David Michael

Flat panel displays have become ubiquitous, enabling products from highresolution cell phones to ultra-large television panels. Amorphous silicon (a- Si) has been the industry workhorse as the active semiconductor in pixeladdressing transistors due to its uniformity and low production costs. However, a-Si can no longer support larger and higher-resolution displays, and new materials with higher electron mobilities are required. Amorphous indium gallium zinc oxide (a-IGZO), which retains the uniformity and low cost of amorphous films, has emerged as a viable candidate due to its enhanced transport properties. However, a-IGZO devices suffer from long-term instabilities--the origins of which are not yet fully understood--causing a drift in switching characteristics over time and affecting product lifetime. More recently, devices fabricated from textured nanocrystalline IGZO, termed c-axis aligned crystalline (CAAC), have demonstrated superior stability. Unfortunately, little is known regarding the phase formation and crystallization kinetics of either the CAAC structure or in the broader ternary IGZO system. Crystallinity and texture of CAAC IGZO films deposited by RF reactive sputtering were studied and characterized over a wide range of deposition conditions. The characteristic CAAC (0 0 9) peak at 2theta = 30° was observed by X-ray diffraction, and nanocrystalline domain texture was determined using a general area detector diffraction system (GADDS). Highly ordered CAAC films were obtained near the InGaZnO4 composition at a substrate temperature of 310 °C and in a 10%O2/90% Ar sputtering ambient. High-resolution transmission electron microscopy (HRTEM) confirmed the formation of CAAC and identified 2-3 nm domains coherently aligned over large ranges extending beyond the field of view (15 nm x 15 nm). Cross-section HRTEM of the CAAC/substrate interface shows formation of an initially disordered IGZO layer prior to CAAC formation, suggesting a nucleation mechanism

Formation of an Anti-Core–Shell Structure in Layered Oxide Cathodes for Li-Ion Batteries

Energy Technology Data Exchange (ETDEWEB)

Zhang, Hanlei [Materials; amp, Department; NorthEast; Omenya, Fredrick [NorthEast; Whittingham, M. Stanley [NorthEast; Wang, Chongmin [Environmental; Zhou, Guangwen [Materials; amp, Department; NorthEast

2017-10-20

The layered → rock-salt phase transformation in the layered dioxide cathodes for Li-ion batteries is believed to result in a “core-shell” structure of the primary particles, in which the core region maintains as the layered phase while the surface region undergoes the phase transformation to the rock-salt phase. Using transmission electron microscopy, here we demonstrate the formation of an “anti-core-shell” structure in cycled primary particles with a formula of LiNi0.80Co0.15Al0.05O2, in which the surface and subsurface regions remain as the layered structure while the rock-salt phase forms as domains in the bulk with a thin layer of the spinel phase between the rock-salt core and the skin of the layered phase. Formation of this anti-core-shell structure is attributed to the oxygen loss at the surface that drives the migration of oxygen from the bulk to the surface, thereby resulting in localized areas of significantly reduced oxygen levels in the bulk of the particle, which subsequently undergoes the phase transformation to the rock-salt domains. The formation of the anti-core-shell rock-salt domains is responsible for the reduced capacity, discharge voltage and ionic conductivity in cycled cathode.

Crystallization behavior of nanocomposites based on poly(L-lactide) and layered double hydroxides - Unbiased determination of the rigid amorphous phases due to the crystals and the nanofiller

Science.gov (United States)

Schoenhals, Andreas; Leng, Jing; Wurm, Andreas; Schick, Christoph

Semicrystalline polymers have to be described by a three phase model consisting of a mobile amorphous (MAF), a crystalline (CF), and a rigid amorphous fraction (RAF). For nanocomposites based on a semicrystalline polymer the RAF is due to both the crystallites (RAFcrystal) and the filler (RAFfiller) . In most cases a separation of both contributions is not possible without further assumptions. Here polymer nanocomposite based on poly(L-lactide) and layered double hydroxide nanofiller were prepared. Due to the low crystallization rate of PLA its crystallization can be suppressed by a high enough cooling rate, and the RAF is due only to the nanofiller. The MAF, CF, and RAF were estimated by Temperature Modulated DSC. For the first time CF, MAF, RAFcrystal, and RAFfiller could be estimated without any assumption. Two different systems with a different degree of exfoliation were prepared and discussed in detail.

Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction

Energy Technology Data Exchange (ETDEWEB)

Fong, S. W., E-mail: swfong@stanford.edu; Wong, H.-S. P. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Sood, A. [Department of Material Science and Engineering, Stanford University, Stanford, California 94305 (United States); Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Chen, L. [School of Energy and Power Engineering, Xi' an Jiatong University, Xi' an, Shaanxi 710049 (China); Kumari, N.; Gibson, G. A. [Hewlett-Packard Labs, 1501 Page Mill Rd., Palo Alto, California 94304 (United States); Asheghi, M.; Goodson, K. E. [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States)

2016-07-07

In this work, we investigate the temperature-dependent thermal conductivities of few nanometer thick alternating stacks of amorphous dielectrics, specifically SiO{sub 2}/Al{sub 2}O{sub 3} and SiO{sub 2}/Si{sub 3}N{sub 4}. Experiments using steady-state Joule-heating and electrical thermometry, while using a micro-miniature refrigerator over a wide temperature range (100–500 K), show that amorphous thin-film multilayer SiO{sub 2}/Si{sub 3}N{sub 4} and SiO{sub 2}/Al{sub 2}O{sub 3} exhibit through-plane room temperature effective thermal conductivities of about 1.14 and 0.48 W/(m × K), respectively. In the case of SiO{sub 2}/Al{sub 2}O{sub 3}, the reduced conductivity is attributed to lowered film density (7.03 → 5.44 × 10{sup 28 }m{sup –3} for SiO{sub 2} and 10.2 → 8.27 × 10{sup 28 }m{sup –3} for Al{sub 2}O{sub 3}) caused by atomic layer deposition of thin-films as well as a small, finite, and repeating thermal boundary resistance (TBR) of 1.5 m{sup 2} K/GW between dielectric layers. Molecular dynamics simulations reveal that vibrational mismatch between amorphous oxide layers is small, and that the TBR between layers is largely due to imperfect interfaces. Finally, the impact of using this multilayer dielectric in a dash-type phase-change memory device is studied using finite-element simulations.

Isotopic labeling study of oxygen diffusion in amorphous LaScO3 high-κ films on Si(100) and its effects on the electrical characteristics

International Nuclear Information System (INIS)

Lopes, J.M.J.; Littmark, U.; Roeckerath, M.; Durgun Oezben, E.; Lenk, S.; Schubert, J.; Mantl, S.; Breuer, U.; Besmehn, A.; Staerk, A.; Grande, P.L.; Sortica, M.A.; Radtke, C.

2009-01-01

The influence of post-deposition oxygen anneals on the properties of amorphous LaScO 3 films on Si(100) is reported. The use of an isotopically ( 18 O 2 ) enriched atmosphere allowed to investigate the 16 O- 18 O exchange and the oxygen diffusion across the dielectric layer. Such effects are connected to the formation of an interfacial layer. Oxygen annealing leads to nearly ideal capacitance-voltage curves, lower leakage currents and interface trap densities, as well as to κ-values up to 33 for the LaScO 3 films. These results are attributed to the suppression of oxygen-related trap centers and the achievement of a stoichiometric oxygen content. (orig.)

Effect of nickel oxide seed layers on annealed-amorphous titanium oxide thin films prepared using plasma-enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Wu, Cheng-Yang; Hong, Shao-Chyang; Hwang, Fu-Tsai; Lai, Li-Wen; Lin, Tan-Wei; Liu, Day-Shan

2011-01-01

The effect of a nickel oxide (NiO x ) seed layer on the crystallization and photocatalytic activity of the sequentially plasma-enhanced chemical vapor deposited amorphous titanium oxide (TiO x ) thin film processed by a post-annealing process was investigated. The evolution of the crystalline structures, chemical bond configurations, and surface/cross-sectional morphologies of the annealed TiO x films, with and without a NiO x seed layer, was examined using X-ray diffractometer, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscope measurements. Thermo- and photo-induced hydrophilicity was determined by measuring the contact angle of water droplet. Photocatalytic activity after UV light irradiation was evaluated from the decolorization of a methylene blue solution. The crystallization temperature of the TiO x film, deposited on a NiO x seed layer, was found to be lower than that of a pure TiO x film, further improving the thermo- and photo-induced surface super-hydrophilicity. The TiO x film deposited onto the NiO x seed layer, resulting in significant cluster boundaries, showed a rough surface morphology and proved to alleviate the anatase crystal growth by increasing the post-annealing temperature, which yielded a more active surface area and prohibited the recombination of photogenerated electrons and holes. The photocatalytic activity of the NiO x /TiO x system with such a textured surface therefore was enhanced and optimized through an adequate post-annealing process.

Effect of nickel oxide seed layers on annealed-amorphous titanium oxide thin films prepared using plasma-enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Wu, Cheng-Yang; Hong, Shao-Chyang [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Hwang, Fu-Tsai [Department of Electro-Optical Engineering, National United University, Miao-Li, 36003, Taiwan (China); Lai, Li-Wen [ITRI South, Industrial Technology Research Institute, Liujia, Tainan, 73445, Taiwan (China); Lin, Tan-Wei [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Liu, Day-Shan, E-mail: dsliu@sunws.nfu.edu.tw [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China)

2011-10-31

The effect of a nickel oxide (NiO{sub x}) seed layer on the crystallization and photocatalytic activity of the sequentially plasma-enhanced chemical vapor deposited amorphous titanium oxide (TiO{sub x}) thin film processed by a post-annealing process was investigated. The evolution of the crystalline structures, chemical bond configurations, and surface/cross-sectional morphologies of the annealed TiO{sub x} films, with and without a NiO{sub x} seed layer, was examined using X-ray diffractometer, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscope measurements. Thermo- and photo-induced hydrophilicity was determined by measuring the contact angle of water droplet. Photocatalytic activity after UV light irradiation was evaluated from the decolorization of a methylene blue solution. The crystallization temperature of the TiO{sub x} film, deposited on a NiO{sub x} seed layer, was found to be lower than that of a pure TiO{sub x} film, further improving the thermo- and photo-induced surface super-hydrophilicity. The TiO{sub x} film deposited onto the NiO{sub x} seed layer, resulting in significant cluster boundaries, showed a rough surface morphology and proved to alleviate the anatase crystal growth by increasing the post-annealing temperature, which yielded a more active surface area and prohibited the recombination of photogenerated electrons and holes. The photocatalytic activity of the NiO{sub x}/TiO{sub x} system with such a textured surface therefore was enhanced and optimized through an adequate post-annealing process.

Temperature dependence of copper diffusion in different thickness amorphous tungsten/tungsten nitride layer

Science.gov (United States)

Asgary, Somayeh; Hantehzadeh, Mohammad Reza; Ghoranneviss, Mahmood

2017-11-01

The amorphous W/WN films with various thickness (10, 30 and 40 nm) and excellent thermal stability were successfully prepared on SiO2/Si substrate with evaporation and reactive evaporation method. The W/WN bilayer has technological importance because of its low resistivity, high melting point, and good diffusion barrier properties between Cu and Si. The thermal stability was evaluated by X-ray diffractometer (XRD) and Scanning Electron Microscope (SEM). In annealing process, the amorphous W/WN barrier crystallized and this phenomenon is supposed to be the start of Cu atoms diffusion through W/WN barrier into Si. With occurrence of the high-resistive Cu3Si phase, the W/WN loses its function as a diffusion barrier. The primary mode of Cu diffusion is the diffusion through grain boundaries that form during heat treatments. The amorphous structure with optimum thickness is the key factor to achieve a superior diffusion barrier characteristic. The results show that the failure temperature increased by increasing the W/WN film thickness from 10 to 30 nm but it did not change by increasing the W/WN film thickness from 30 to 40 nm. It is found that the 10 and 40 nm W/WN films are good diffusion barriers at least up to 800°C while the 30 nm W/WN film shows superior properties as a diffusion barrier, but loses its function as a diffusion barrier at about 900°C (that is 100°C higher than for 10 and 40 nm W/WN films).

Discrete element simulation of charging and mixed layer formation in the ironmaking blast furnace

Science.gov (United States)

Mitra, Tamoghna; Saxén, Henrik

2016-11-01

The burden distribution in the ironmaking blast furnace plays an important role for the operation as it affects the gas flow distribution, heat and mass transfer, and chemical reactions in the shaft. This work studies certain aspects of burden distribution by small-scale experiments and numerical simulation by the discrete element method (DEM). Particular attention is focused on the complex layer-formation process and the problems associated with estimating the burden layer distribution by burden profile measurements. The formation of mixed layers is studied, and a computational method for estimating the extent of the mixed layer, as well as its voidage, is proposed and applied on the results of the DEM simulations. In studying a charging program and its resulting burden distribution, the mixed layers of coke and pellets were found to show lower voidage than the individual burden layers. The dynamic evolution of the mixed layer during the charging process is also analyzed. The results of the study can be used to gain deeper insight into the complex charging process of the blast furnace, which is useful in the design of new charging programs and for mathematical models that do not consider the full behavior of the particles in the burden layers.

Impurity-defect complexes in hydrogenated amorphous silicon

International Nuclear Information System (INIS)

Yang, L.H.; Fong, C.Y.; Nichols, C.S.

1991-01-01

The two most outstanding features observed for dopants in hydrogenated amorphous silicon (a-Si:H)-a shift in the Fermi level accompanied by an increase in the defect density and an absence of degenerate doping have previously been postulated to stem from the formation of substitutional dopant-dangling bond complexes. Using first-principles self-consistent pseudopotential calculations in conjunction with a supercell model for the amorphous network and the ability of network relaxation from the first-principles results. The authors have studied the electronic and structural properties of substitutional fourfold-coordinated phosphorus and boron at the second neighbor position to a dangling bond defect. This paper demonstrates that such impurity-defect complexes can account for the general features observed experimentally in doped a-Si:H

Characterization of diamond amorphized by ion implantation

International Nuclear Information System (INIS)

Allen, W.R.; Lee, E.H.

1992-01-01

Single crystal diamond has been implanted at 1 MeV with 2 x 10 20 Ar/m 2 . Rutherford backscattering spectrometry in a channeled geometry revealed a broad amorphized region underlying a thin, partially crystalline layer. Raman spectroscopy disclosed modifications in the bonding characteristic of the appearance of non-diamond carbon. The complementary nature of the two analysis techniques is demonstrated. The Knoop hardness of the implanted diamond was reduced by implantation

Low temperature irradiation effects on iron-boron based amorphous metallic alloys

International Nuclear Information System (INIS)

Audouard, Alain.

1983-01-01

Three iron-boron amorphous alloys and the crystalline Fe 3 B alloy have been irradiated at liquid hydrogen temperature. 2,4 MeV electron irradiation induces the creation of point defects in the amorphous alloys as well as in the crystalline Fe 3 B alloy. These point defects can be assimilated to iron ''Frenkel pairs''. They have been characterized by determining their intrinsic electrical resistivity and their formation volume. The displacement threshold energy of iron atoms has also been determined. 10 B fission fragments induce, in these amorphous alloys, displacement cascades which lead to stable vacancy rich zones. This irradiation also leads to a structural disorder in relation with the presence of defects. 235 U fission fragments irradiation modifies drastically the structure of the amorphous alloys. The results have been interpreted on the basis of the coexistence of two opposite processes which induce local disorder and crystallisation respectively [fr

Achievement report on Sunshine Program research and development for fiscal 1981. Research and development of amorphous solar cells (Research and development of integrated type amorphous solar cells); 1981 nendo amorphous taiyo denchi no kenkyu kaihatsu seika hokokusho. Shusekigata amorphous taiyo denchi no kenkyu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1982-03-01

An a-SiC (amorphous SiC) material with a wider band gap adds to the conventional hydrogen- and fluorine-based a-Si materials in the study for device efficiency enhancement, and the a-SiC is found suitable as a wide-gap window material. The separated formation technique is found to work effectively for improvement on cell characteristics because it prevents the mixing of impurities of different types. A p-i-n (positive-intrinsic-negative) type amorphous solar cell is subjected to analysis, and a theoretical efficiency of 12.5% is obtained in photoelectric conversion. A conversion efficiency not less than 7% is obtained from an ITO (indium-tin oxide)/p(SiC)-i-n/Al cell on a glass substrate. Design is optimized for area enlargement for an integrated type device, which results in an experimental 10cm-square integrated type solar cell with a conversion efficiency of not less than 5%. As for modularization, a glass substrate for integrated type device is used, as is, as a light-receiving surface protecting board, and studies are conducted thereon. It is then found that the amorphous solar cell experiences some degradation in reliability at the beginning of an irradiation test but that no extensive degradation in reliability is observed even after the passage of 1,000 hours from the beginning of the test. The separated formation technique is found suitable for use in mass production. (NEDO)

Structure and thermal stability of biodegradable Mg-Zn-Ca based amorphous alloys synthesized by mechanical alloying

Energy Technology Data Exchange (ETDEWEB)

Datta, Moni Kanchan; Chou, Da-Tren; Hong, Daeho; Saha, Partha [Department of Bioengineering, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Chung, Sung Jae [Mechanical Engineering and Materials Science, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Lee, Bouen [Department of Bioengineering, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Sirinterlikci, Arif [Department of Engineering, Robert Morris University, Moon Township, Pittsburgh, PA 15108 (United States); Ramanathan, Madhumati; Roy, Abhijit [Department of Bioengineering, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Kumta, Prashant N., E-mail: matscib@gmail.com [Department of Bioengineering, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Mechanical Engineering and Materials Science, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Chemical and Petroleum Engineering, Swanson School of Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States); School of Dental Medicine, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Center for Complex Engineered Multifunctional Materials, University of Pittsburgh, Pittsburgh, PA 15261 (United States)

2011-12-15

Room temperature solid state diffusion reaction induced by mechanical alloying (MA) of elemental blends of Mg, Zn and Ca of nominal composition 60 at.% Mg-35 at.% Zn-5 at.% Ca has been studied. Formation of fully amorphous structure has been identified after 5 h of MA performed in a SPEX 8000M shaker mill, with milling continued up to 8 h to confirm the formation of homogeneous amorphous phase. Thermal stability of the amorphous phase has been studied using differential scanning calorimetry (DSC) and isothermal heat treatment at different temperatures. The amorphous powder consolidated using cold isostatic pressing (CIP) showed an envelope density {approx}80% of absolute density, which increased to an envelope density {approx}84% of absolute density after sintering at an optimized temperature of {approx}523 K for 9 h. Electrochemical bio-corrosion testing of the CIP compacted amorphous pellet as well as the sintered pellet performed in Dulbecco's Modified Eagle Medium, showed improved corrosion resistance in comparison to the as-cast pure Mg. Cytotoxicity testing of the CIP compacted amorphous pellet, performed using the MTT assay with MC3T3 osteoblastic cells, showed low cytotoxicity in comparison to the as-cast pure Mg.

Peculiar features in formation of diffusion layer properties during nitridation

International Nuclear Information System (INIS)

Gulyaev, A.P.; Konoval'tsev, V.I.; Nikitin, V.V.

1983-01-01

Peculiarities of the formation of multiphase nitridated layer at samples of commercial iron, 20, 40Kh and 38KhMYu6A steels are studied with the help of high-temperature methods of investigation (X-ray diffraction analysis, hardening and thickness measuring). It is found out that during the saturation the solid solution oversaturated with nitrogen is formed; some increase in hardness in the process is a result of solid solution hardening and the increase of thickness of nitride zone; however the main growth of the layer hardness is achieved during the cooling as a result of α phase precipitating hardening

Specific Features of Chip Making and Work-piece Surface Layer Formation in Machining Thermal Coatings

Directory of Open Access Journals (Sweden)

V. M. Yaroslavtsev

2016-01-01

Full Text Available A wide range of unique engineering structural and performance properties inherent in metallic composites characterizes wear- and erosion-resistant high-temperature coatings made by thermal spraying methods. This allows their use both in manufacturing processes to enhance the wear strength of products, which have to operate under the cyclic loading, high contact pressures, corrosion and high temperatures and in product renewal.Thermal coatings contribute to the qualitative improvement of the technical level of production and product restoration using the ceramic composite materials. However, the possibility to have a significantly increased product performance, reduce their factory labour hours and materials/output ratio in manufacturing and restoration is largely dependent on the degree of the surface layer quality of products at their finishing stage, which is usually provided by different kinds of machining.When machining the plasma-sprayed thermal coatings, a removing process of the cut-off layer material is determined by its distinctive features such as a layered structure, high internal stresses, low ductility material, high tendency to the surface layer strengthening and rehardening, porosity, high abrasive properties, etc. When coatings are machined these coating properties result in specific characteristics of chip formation and conditions for formation of the billet surface layer.The chip formation of plasma-sprayed coatings was studied at micro-velocities using an experimental tool-setting microscope-based setup, created in BMSTU. The setup allowed simultaneous recording both the individual stages (phases of the chip formation process and the operating force factors.It is found that formation of individual chip elements comes with the multiple micro-cracks that cause chipping-off the small particles of material. The emerging main crack in the cut-off layer of material leads to separation of the largest chip element. Then all the stages

Stability of passive films on amorphous Fe-Cr alloys with boron and phosphorus with impedance spectroscopy

International Nuclear Information System (INIS)

Virtanen, S.; Elsener, B.; Boehni, H.

1989-01-01

The mechanism of the passivation and the effect of metalloids on the stability of the passive films of amorphous Fe-Cr-(B,P,C) alloys has been investigated by polarization measurements, impedance spectroscopy and potential decay measurements. The results show that phosphorus facilitates the active/passive-transition by forming a porous iron-phosphate pre-passive layer on the alloy surface in the active range of the dissolution. This layer blocks the active sites of the surface and accelerates the cathodic H 2 -evolution reaction. The formation of the passivating chromium oxide layer takes place in the pores of this layer. In the passive range of the alloys oxidized phosphorus gets incorporated in the outer layer of the passive film. The presence of oxidized phosphorus as PO 4 3- anions in the passive film increases the localized corrosion resistance in Cl-containing solutions. The effect of the incorporated phosphates in the passive film is discussed with respect to the bipolar fixed-charge induced passivity model. The phosphates make the outer layer of the passive film cation-selective and thus hinder the penetration of the chlorides into the film. The oxidized boron species cannot change the ion-selectivity of the film; instead of this they negatively affect the stability of the passive film. (author) 18 refs., 9 figs., 3 tabs

Modeling of the structure and properties of oxygen vacancies in amorphous silica

International Nuclear Information System (INIS)

Mukhopadhyay, Sanghamitra; Sushko, Peter V.; Stoneham, A. Marshall; Shluger, Alexander L.

2004-01-01

We used an embedded cluster method to predict and characterize possible structural types of neutral and positively charged oxygen vacancies in amorphous silica. Defects were treated at 70 different oxygen sites of continuous random network amorphous structure generated using classical molecular dynamics. The neutral vacancies are characterized by a wide distribution of formation energies and structural parameters. Our modeling predicts the two major structural types of positively charged vacancies (E ' centers): dimer and dangling bond centers. The local structure of both types of centers depends on the medium range structure of the surrounding amorphous network. The majority of the dangling bond centers are unpuckered. We used structural 'fingerprints' derived from similar calculations of oxygen vacancy type centers in quartz and from experiment to find two other structural types of dangling bond centers: the puckered configuration and the back-projected configuration of E ' centers. In each case we find a distribution of both structural and EPR parameters. However, the average values of the EPR parameters for all dangling bond configurations are very similar. The structural criteria which favor the formation of different types of centers in the original amorphous structure are formulated in terms of the average Si-O distance of oxygen ion with its two neighboring silicon ions

Aging promotes todorokite formation from layered manganese oxide at near-surface conditions

Energy Technology Data Exchange (ETDEWEB)

Cui, Haojie [Chinese Academy of Sciences, Xiamen (China). Key Lab. of Urban Environment and Health; Huazhong Agricultural Univ., Ministry of Agriculture, Wuhan (China). Key Lab. of Subtropical Agricultural Resources and Environment; Liu, Fan; Feng, Xionghan; Tan, Wenfeng [Huazhong Agricultural Univ., Ministry of Agriculture, Wuhan (China). Key Lab. of Subtropical Agricultural Resources and Environment; Wang, Ming Kuang [National Taiwan Univ., Taipei (China). Dept. of Agricultural Chemistry

2010-12-15

Todorokite is one common manganese oxide in soils and sediments and is commonly formed from layered Na-buserite. Aging processes can alter the physicochemical properties of freshly formed Na-buserite in natural environments. However, it is not clear whether and how aging affects the formation of todorokites. In the present paper, Na-buserite with aging treatment was employed to prepare todorokite at atmospheric pressure to investigate the effects of aging treatment of Na-buserite on the formation of todorokite. Four aged Na-buserite samples, which are produced through oxidation of Mn{sup 2+} in concentrated NaOH medium by O{sub 2} with aging for 3, 6, 9, and 12 months, were employed to investigate the effects of aging processes on the transformation from Na-buserite to todorokite by Mg{sup 2+}-templating reaction at atmospheric pressure. The manganese oxides were examined using X-ray diffraction (XRD), elemental analysis, determinations of the average manganese oxidation number, infrared spectroscopy (IR), and transmission electron microscopy (TEM). The XRD, IR, and elemental analyses indicate that aging treatment can alter the substructure of the freshly synthesized Na-buserite. During the aging process, some of the Mn(III) may migrate into the interlayer region or disproportionate to form Mn{sup 2+} and Mn{sup 4+} from the layer of Na-buserite and the concomitant formation of layer vacancies. The interlayer Mn{sup 3+} or Mn{sup 2+} occupied above or below the layer vacancy sites and become corner-sharing octahedral. XRD analyses and TEM clearly show that the transformation from Na-buserite to todorokite was promoted by aging treatments. The alterations of substructure of aged Na-buserites can promote the rearrangement of manganese to construct a tunnel structure during the transformation from layered manganese oxides to tunnel-structure todorokite at atmospheric pressure. The transformation from Na-buserite to todorokite was promoted by aging treatments at

The Effect of Substitution of Fe By Co on Rapidly Quenched (FeCoMoCuB Amorphous Alloys

Directory of Open Access Journals (Sweden)

Marek Paluga

2005-01-01

Full Text Available (Fe1-xCox79Mo8Cu1B15 amorphous alloys ware prepared in the form of ribbons by rapid quenching for x=0. 0.25 and 0.5. The effect of variation of Co/Fe ratio is analyzed with respect to the formation of amorphous state and to transformation of the structure into nancrystalline phases formed after subsequent thermal treatment. Selected properties and atomic structure in as-quenched state are studied by TEM, AFM, XRD any by measurement of magnetoresistance characteristics. The influence of heat treatment on transport and magnetic properties is shown on temperature dependencies of electrical resistivity and magnetization. It was founf that while the increase of Co content leads to the increase of Curie temperature of as-quenched structure, transition to nanocrystalline state is not affected in a significant manner. The as-quenched state for alloy without Co was found to contain thin crystal-containing layer which, however, was observed, contary to general behavior, at the side of the ribbon exposed to higher quenching rates.

Radiation damage and redeposited-layer formation on plasma facing materials in the TRIAM-1M

International Nuclear Information System (INIS)

Hirai, Takeshi; Tokunaga, Kazutoshi; Fujiwara, Tadashi; Yoshida, Naoaki; Itoh, Satoshi

1997-01-01

As an aim to obtain some informations of material damage at long time discharge and redeposited-layer formed by scrape off layer (SOL), two collector probe experiments were conducted by using Tokamak of Research Institute for Applied Mechanics (TRIAM-IM). As a result, radiation damage due to charge exchange neutral particles of more than 2 MeV high energy component flying from plasma was observed. And in either experiment, redeposited-layer formation due to deposite of impurity atoms in the plasma could be observed. In the first experiment, a redeposited-layer with fine crystalline particles was observed, which was formed to contain multi-component system of Fe, Cr and Ni and light elements O and C. And, in the second experiment, a redeposited-layer grain-grown in which main component was Mo was observed. Surface modification of plasma facing material such as above-mentioned damage induction, redeposited-layer formation, and so on, was thought to much affect deterioration of materials and recycling of hydrogen. (G.K.)

Amorphous calcium carbonate particles form coral skeletons

Science.gov (United States)

Mass, Tali; Giuffre, Anthony J.; Sun, Chang-Yu; Stifler, Cayla A.; Frazier, Matthew J.; Neder, Maayan; Tamura, Nobumichi; Stan, Camelia V.; Marcus, Matthew A.; Gilbert, Pupa U. P. A.

2017-09-01

Do corals form their skeletons by precipitation from solution or by attachment of amorphous precursor particles as observed in other minerals and biominerals? The classical model assumes precipitation in contrast with observed “vital effects,” that is, deviations from elemental and isotopic compositions at thermodynamic equilibrium. Here, we show direct spectromicroscopy evidence in Stylophora pistillata corals that two amorphous precursors exist, one hydrated and one anhydrous amorphous calcium carbonate (ACC); that these are formed in the tissue as 400-nm particles; and that they attach to the surface of coral skeletons, remain amorphous for hours, and finally, crystallize into aragonite (CaCO3). We show in both coral and synthetic aragonite spherulites that crystal growth by attachment of ACC particles is more than 100 times faster than ion-by-ion growth from solution. Fast growth provides a distinct physiological advantage to corals in the rigors of the reef, a crowded and fiercely competitive ecosystem. Corals are affected by warming-induced bleaching and postmortem dissolution, but the finding here that ACC particles are formed inside tissue may make coral skeleton formation less susceptible to ocean acidification than previously assumed. If this is how other corals form their skeletons, perhaps this is how a few corals survived past CO2 increases, such as the Paleocene-Eocene Thermal Maximum that occurred 56 Mya.

Laminated Amorphous Silicon Neutron Detector (pre-print)

International Nuclear Information System (INIS)

McHugh, Harry; Branz, Howard; Stradins, Paul; Xu, Yueqin

2009-01-01

An internal R and D project was conducted at the Special Technologies Laboratory (STL) of National Security Technologies, LLC (NSTec), to determine the feasibility of developing a multi-layer boron-10 based thermal neutron detector using the amorphous silicon (AS) technology currently employed in the manufacture of liquid crystal displays. The boron-10 neutron reaction produces an alpha that can be readily detected. A single layer detector, limited to an approximately 2-micron-thick layer of boron, has a theoretical sensitivity of about 3%; hence a thin multi-layer device with high sensitivity can theoretically be manufactured from single layer detectors. Working with National Renewable Energy Laboratory (NREL), an AS PiN diode alpha detector was developed and tested. The PiN diode was deposited on a boron-10 coated substrate. Testing confirmed that the neutron sensitivity was nearly equal to the theoretical value of 3%. However, adhesion problems with the boron-10 coating prevented successful development of a prototype detector. Future efforts will include boron deposition work and development of integrated AS signal processing circuitry.

Layer-by-layer self-assembly of minocycline-loaded chitosan/alginate multilayer on titanium substrates to inhibit biofilm formation.

Science.gov (United States)

Lv, Hongbin; Chen, Zhen; Yang, Xiaoping; Cen, Lian; Zhang, Xu; Gao, Ping

2014-11-01

Bacteria adhesion and subsequent biofilm formation are primary causes of implant associated infection. The biofilm makes the bacteria highly resistant to the host defense and antimicrobial treatment. Antibacterial coatings on the surface of titanium implant can prevent biofilm formation effectively, but it is still a challenge to accomplish relatively long lasting antibacterial effects before wound healing or formation of biological seal. The purpose of our work was to construct antibacterial multilayer coatings loaded with minocycline on surface of Ti substrates using chitosan and alginate based on layer-by-layer (LbL) self-assembly technique. In this study, the surfaces of Ti substrates were first hydroxylated and then treated with 3-aminopropyltriethoxysilane (ATPES) to obtain amino-functionalized Ti substrates. Next, the precursor layer of chitosan was covalently conjugated to amino-functionalized Ti substrates. The following alternately coating alginate loaded with minocycline and chitosan onto the precursor layer of chitosan was carried out via LbL self-assembly technique to construct the multilayer coatings on Ti substrates. The multilayer coatings loaded more minocycline and improved sustainability of minocycline release to kill planktonic and adherent bacteria. Moreover, surface charge and hydrophilicity of the coatings and antibacterial ability of chitosan itself also played roles in the antibacterial performance, which can keep the antibacterial ability of the multilayer coatings after minocycline release ceases. In conclusion, LbL self-assembly method provides a promising strategy to fabricate long-term antibacterial surfaces, which is especially effective in preventing implant associated infections in the early stage. Loading minocycline on the surface of implants based on LbL self-assembly strategy can endow implants with sustained antibacterial property. This can inhabit the immediate colonization of bacteria onto the surface of implants in the

Ge nano-layer fabricated by high-fluence low-energy ion implantation

International Nuclear Information System (INIS)

Lu Tiecheng; Dun Shaobo; Hu Qiang; Zhang Songbao; An Zhu; Duan Yanmin; Zhu Sha; Wei Qiangmin; Wang Lumin

2006-01-01

A Ge nano-layer embedded in the surface layer of an amorphous SiO 2 film was fabricated by high-fluence low-energy ion implantation. The component, phase, nano-structure and luminescence properties of the nano-layer were studied by means of Rutherford backscattering, glancing incident X-ray diffraction, laser Raman scattering, transmission electron microscopy and photoluminescence. The relation between nano-particle characteristics and ion fluence was also studied. The results indicate that nano-crystalline Ge and nano-amorphous Ge particles coexist in the nano-layer and the ratio of nano-crystalline Ge to nano-particle Ge increases with increasing ion fluence. The intensity of photoluminescence from the nano-layer increases with increasing ion fluence also. Prepared with certain ion fluences, high-density nano-layers composed of uniform-sized nano-particles can be observed

Health hazards due to the inhalation of amorphous silica

Energy Technology Data Exchange (ETDEWEB)

Merget, R.; Bruening, T. [Research Institute for Occupational Medicine (BGFA), Bochum (Germany); Bauer, T. [Bergmannsheil, University Hospital, Department of Internal Medicine, Division of Pneumonology, Allergology and Sleep Medicine, Bochum (Germany); Kuepper, H.U.; Breitstadt, R. [Degussa-Huels Corp., Wesseling (Germany); Philippou, S. [Department of Pathology, Augusta Krankenanstalten, Bochum (Germany); Bauer, H.D. [Research Institute for Hazardous Substances (IGF), Bochum (Germany)

2002-01-01

Occupational exposure to crystalline silica dust is associated with an increased risk for pulmonary diseases such as silicosis, tuberculosis, chronic bronchitis, chronic obstructive pulmonary disease (COPD) and lung cancer. This review summarizes the current knowledge about the health effects of amorphous (non-crystalline) forms of silica. The major problem in the assessment of health effects of amorphous silica is its contamination with crystalline silica. This applies particularly to well-documented pneumoconiosis among diatomaceous earth workers. Intentionally manufactured synthetic amorphous silicas are without contamination of crystalline silica. These synthetic forms may be classified as (1) wet process silica, (2) pyrogenic (''thermal'' or ''fumed'') silica, and (3) chemically or physically modified silica. According to the different physico-chemical properties, the major classes of synthetic amorphous silica are used in a variety of products, e.g. as fillers in the rubber industry, in tyre compounds, as free-flow and anti-caking agents in powder materials, and as liquid carriers, particularly in the manufacture of animal feed and agrochemicals; other uses are found in toothpaste additives, paints, silicon rubber, insulation material, liquid systems in coatings, adhesives, printing inks, plastisol car undercoats, and cosmetics. Animal inhalation studies with intentionally manufactured synthetic amorphous silica showed at least partially reversible inflammation, granuloma formation and emphysema, but no progressive fibrosis of the lungs. Epidemiological studies do not support the hypothesis that amorphous silicas have any relevant potential to induce fibrosis in workers with high occupational exposure to these substances, although one study disclosed four cases with silicosis among subjects exposed to apparently non-contaminated amorphous silica. Since the data have been limited, a risk of chronic bronchitis, COPD or

Health hazards due to the inhalation of amorphous silica

International Nuclear Information System (INIS)

Merget, R.; Bruening, T.; Bauer, T.; Kuepper, H.U.; Breitstadt, R.; Philippou, S.; Bauer, H.D.

2002-01-01

Occupational exposure to crystalline silica dust is associated with an increased risk for pulmonary diseases such as silicosis, tuberculosis, chronic bronchitis, chronic obstructive pulmonary disease (COPD) and lung cancer. This review summarizes the current knowledge about the health effects of amorphous (non-crystalline) forms of silica. The major problem in the assessment of health effects of amorphous silica is its contamination with crystalline silica. This applies particularly to well-documented pneumoconiosis among diatomaceous earth workers. Intentionally manufactured synthetic amorphous silicas are without contamination of crystalline silica. These synthetic forms may be classified as (1) wet process silica, (2) pyrogenic (''thermal'' or ''fumed'') silica, and (3) chemically or physically modified silica. According to the different physico-chemical properties, the major classes of synthetic amorphous silica are used in a variety of products, e.g. as fillers in the rubber industry, in tyre compounds, as free-flow and anti-caking agents in powder materials, and as liquid carriers, particularly in the manufacture of animal feed and agrochemicals; other uses are found in toothpaste additives, paints, silicon rubber, insulation material, liquid systems in coatings, adhesives, printing inks, plastisol car undercoats, and cosmetics. Animal inhalation studies with intentionally manufactured synthetic amorphous silica showed at least partially reversible inflammation, granuloma formation and emphysema, but no progressive fibrosis of the lungs. Epidemiological studies do not support the hypothesis that amorphous silicas have any relevant potential to induce fibrosis in workers with high occupational exposure to these substances, although one study disclosed four cases with silicosis among subjects exposed to apparently non-contaminated amorphous silica. Since the data have been limited, a risk of chronic bronchitis, COPD or emphysema cannot be excluded. There is no

On the use of a charged tunnel layer as a hole collector to improve the efficiency of amorphous silicon thin-film solar cells

Energy Technology Data Exchange (ETDEWEB)

Ke, Cangming; Sahraei, Nasim; Aberle, Armin G. [Solar Energy Research Institute of Singapore, National University of Singapore, Singapore 117574 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore); Stangl, Rolf [Solar Energy Research Institute of Singapore, National University of Singapore, Singapore 117574 (Singapore); Peters, Ian Marius

2015-06-28

A new concept, using a negatively charged tunnel layer as a hole collector, is proposed and theoretically investigated for application in amorphous silicon thin-film solar cells. The concept features a glass/transparent conductive oxide/ultra-thin negatively charged tunnel layer/intrinsic a-Si:H/n-doped a-Si:H/metal structure. The key feature of this so called t{sup +}-i-n structure is the introduction of a negatively charged tunnel layer (attracting holes from the intrinsic absorber layer), which substitutes the highly recombination active p-doped a-Si:H layer in a conventional p-i-n configuration. Atomic layer deposited aluminum oxide (ALD AlO{sub x}) is suggested as a potential candidate for such a tunnel layer. Using typical ALD AlO{sub x} parameters, a 27% relative efficiency increase (i.e., from 9.7% to 12.3%) is predicted theoretically for a single-junction a-Si:H solar cell on a textured superstrate. This prediction is based on parameters that reproduce the experimentally obtained external quantum efficiency and current-voltage characteristics of a conventional processed p-i-n a-Si:H solar cell, reaching 9.7% efficiency and serving as a reference. Subsequently, the p-doped a-Si:H layer is replaced by the tunnel layer (studied by means of numerical device simulation). Using a t{sup +}-i-n configuration instead of a conventional p-i-n configuration will not only increase the short-circuit current density (from 14.4 to 14.9 mA/cm{sup 2}, according to our simulations), it also enhances the open-circuit voltage and the fill factor (from 917 mV to 1.0 V and from 74% to 83%, respectively). For this concept to work efficiently, a high work function front electrode material or a high interface charge is needed.

On the use of a charged tunnel layer as a hole collector to improve the efficiency of amorphous silicon thin-film solar cells

International Nuclear Information System (INIS)

Ke, Cangming; Sahraei, Nasim; Aberle, Armin G.; Stangl, Rolf; Peters, Ian Marius

2015-01-01

A new concept, using a negatively charged tunnel layer as a hole collector, is proposed and theoretically investigated for application in amorphous silicon thin-film solar cells. The concept features a glass/transparent conductive oxide/ultra-thin negatively charged tunnel layer/intrinsic a-Si:H/n-doped a-Si:H/metal structure. The key feature of this so called t + -i-n structure is the introduction of a negatively charged tunnel layer (attracting holes from the intrinsic absorber layer), which substitutes the highly recombination active p-doped a-Si:H layer in a conventional p-i-n configuration. Atomic layer deposited aluminum oxide (ALD AlO x ) is suggested as a potential candidate for such a tunnel layer. Using typical ALD AlO x parameters, a 27% relative efficiency increase (i.e., from 9.7% to 12.3%) is predicted theoretically for a single-junction a-Si:H solar cell on a textured superstrate. This prediction is based on parameters that reproduce the experimentally obtained external quantum efficiency and current-voltage characteristics of a conventional processed p-i-n a-Si:H solar cell, reaching 9.7% efficiency and serving as a reference. Subsequently, the p-doped a-Si:H layer is replaced by the tunnel layer (studied by means of numerical device simulation). Using a t + -i-n configuration instead of a conventional p-i-n configuration will not only increase the short-circuit current density (from 14.4 to 14.9 mA/cm 2 , according to our simulations), it also enhances the open-circuit voltage and the fill factor (from 917 mV to 1.0 V and from 74% to 83%, respectively). For this concept to work efficiently, a high work function front electrode material or a high interface charge is needed

Reduction experiment of FeO-bearing amorphous silicate: application to origin of metallic iron in GEMS

Energy Technology Data Exchange (ETDEWEB)

Matsuno, Junya; Tsuchiyama, Akira; Miyake, Akira [Department of Geology and Mineralogy, Graduate School of Science, Kyoto University, Kitashirakawa-Oiwake, Sakyo-ku, Kyoto 606-8502 (Japan); Noguchi, Ryo [Department of Earth and Space Science, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan); Ichikawa, Satoshi, E-mail: jmatsuno@kueps.kyoto-u.ac.jp [Institute for Nano-science Design, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan)

2014-09-10

Glass with embedded metal and sulfides (GEMS) are amorphous silicates included in anhydrous interplanetary dust particles (IDPs) and can provide information about material evolution in our early solar system. Several formation processes for GEMS have been proposed so far, but these theories are still being debated. To investigate a possible GEMS origin by reduction of interstellar silicates, we synthesized amorphous silicates with a mean GEMS composition and performed heating experiments in a reducing atmosphere. FeO-bearing amorphous silicates were heated at 923 K and 973 K for 3 hr, and at 1023 K for 1-48 hr at ambient pressure in a reducing atmosphere. Fe grains formed at the interface between the silicate and the reducing gas through a reduction. In contrast, TEM observations of natural GEMS show that metallic grains are uniformly embedded in amorphous silicates. Therefore, the present study suggests that metallic inclusions in GEMS could not form as reduction products and that other formation process such as condensation or irradiation are more likely.

Enhanced thermoelectric performance of amorphous Nb based oxynitrides

Energy Technology Data Exchange (ETDEWEB)

Music, Denis, E-mail: music@mch.rwth-aachen.de; Geyer, Richard W.; Hans, Marcus

2015-12-15

Using density functional theory, amorphous Nb{sub 0.27}Ru{sub 0.06}O{sub 0.56}N{sub 0.10} was designed to facilitate a combination of an enhanced Seebeck coefficient and low electrical resistivity. Based on a positive Cauchy pressure, ductile behavior is expected. To verify these predictions, the transport and mechanical properties of amorphous thin films were evaluated. Metallic electrical resistivity and the Seebeck coefficient of −94 µV K{sup −1} are obtained, which is consistent with our predictions. As there is no crack formation, these samples can be perceived as ductile. We demonstrate that the power factor can be increased by an order of magnitude, while keeping the thermal fatigue low.

Enhanced thermoelectric performance of amorphous Nb based oxynitrides

International Nuclear Information System (INIS)

Music, Denis; Geyer, Richard W.; Hans, Marcus

2015-01-01

Using density functional theory, amorphous Nb_0_._2_7Ru_0_._0_6O_0_._5_6N_0_._1_0 was designed to facilitate a combination of an enhanced Seebeck coefficient and low electrical resistivity. Based on a positive Cauchy pressure, ductile behavior is expected. To verify these predictions, the transport and mechanical properties of amorphous thin films were evaluated. Metallic electrical resistivity and the Seebeck coefficient of −94 µV K"−"1 are obtained, which is consistent with our predictions. As there is no crack formation, these samples can be perceived as ductile. We demonstrate that the power factor can be increased by an order of magnitude, while keeping the thermal fatigue low.

Formation of soft magnetic high entropy amorphous alloys composites containing in situ solid solution phase

Science.gov (United States)

Wei, Ran; Sun, Huan; Chen, Chen; Tao, Juan; Li, Fushan

2018-03-01

Fe-Co-Ni-Si-B high entropy amorphous alloys composites (HEAACs), which containing high entropy solid solution phase in amorphous matrix, show good soft magnetic properties and bending ductility even in optimal annealed state, were successfully developed by melt spinning method. The crystallization phase of the HEAACs is solid solution phase with body centered cubic (BCC) structure instead of brittle intermetallic phase. In addition, the BCC phase can transformed into face centered cubic (FCC) phase with temperature rise. Accordingly, Fe-Co-Ni-Si-B high entropy alloys (HEAs) with FCC structure and a small amount of BCC phase was prepared by copper mold casting method. The HEAs exhibit high yield strength (about 1200 MPa) and good plastic strain (about 18%). Meanwhile, soft magnetic characteristics of the HEAs are largely reserved from HEAACs. This work provides a new strategy to overcome the annealing induced brittleness of amorphous alloys and design new advanced materials with excellent comprehensive properties.

Achievement report for fiscal 1981 on Sunshine Program research and development. Research and development of amorphous solar cells (Research and development of amorphous solar cells on flexible film substrates); 1981 nendo amorphous taiyo denchi no kenkyu kaihatsu seika hokokusho. Kadosei film wo kiban to suru amorphous taiyo denchi no kenkyu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1982-03-31

Efforts will be made to reduce the cost, increase efficiency, and enlarge cell areas and, at the same time, to establish the foundation of a roll-up type solar cell manufacturing process which is required for the implementation of mass production. In an inverted pin/ITO (indium-tin oxide) hetero-face structure cell installed on a polymer film substrate, a conversion efficiency of 5.33% is achieved in the case of a solar cell whose n-layer is of the amorphous phase, and 6.36% in the case of a cell of the microcrystallized phase. A roll-up type glow discharge CVD (chemical vapor deposition) unit is designed and experimentally built, which is for the realization of large area cells. It is now duly expected that an undoped (i-type) a-Si:H film will be deposited to a thickness of approximately 5000A. As the result of a first-step screening conducted in search of amorphous solar cell sealing materials, some applicable plastic materials are selected. The future is bright of amorphous solar cells on polymer film substrates. (NEDO)

Electron stimulated reactions of methyl iodide coadsorbed with amorphous solid water

International Nuclear Information System (INIS)

Perry, C. C.; Faradzhev, N. S.; Madey, T. E.; Fairbrother, D. H.

2007-01-01

The electron stimulated reactions of methyl iodide (MeI) adsorbed on and suspended within amorphous solid water (ice) were studied using a combination of postirradiation temperature programmed desorption and reflection absorption infrared spectroscopy. For MeI adsorbed on top of amorphous solid water (ice), electron beam irradiation is responsible for both structural and chemical transformations within the overlayer. Electron stimulated reactions of MeI result principally in the formation of methyl radicals and solvated iodide anions. The cross section for electron stimulated decomposition of MeI is comparable to the gas phase value and is only weakly dependent upon the local environment. For both adsorbed MeI and suspended MeI, reactions of methyl radicals within MeI clusters lead to the formation of ethane, ethyl iodide, and diiodomethane. In contrast, reactions between the products of methyl iodide and water dissociation are responsible for the formation of methanol and carbon dioxide. Methane, formed as a result of reactions between methyl radicals and either parent MeI molecules or hydrogen atoms, is also observed. The product distribution is found to depend on the film's initial chemical composition as well as the electron fluence. Results from this study highlight the similarities in the carbon-containing products formed when monohalomethanes coadsorbed with amorphous solid water are irradiated by either electrons or photons

The role seemingly of amorphous silica gel layers in chiral separations by planar chromatography

International Nuclear Information System (INIS)

Sajewicz, M.; Kowalska, T.

2007-01-01

In planar chromatography, silica gel appears as the most frequently used adsorbent. Its preference as planar chromatographic stationary phase is due to its high specific surface area (ca. 700 m2 gl) and relatively simple active sites (silanol groups =Si-OH). The high specific surface area of silica gel and a high density of coverage of its surface with the silanol active sites contribute jointly to an excellent separation performance of this adsorbent. In our experiments on chiral separation of the enantiomer pairs by planar chromatography, contradictory behavior of the silica gel layers versus the chiral compounds was observed. The migration tracks of chiral compounds in the ascending planar chromatographic mode were not vertical but bent on either side being a function of analyte chirality. This deviation of the analytes migration track was noticed, when using the densitometric scanner to quantify the respective chromatograms. In order to confirm the hypothesis as to the microcrystalline nature of silica gel used in liquid chromatography, it was further investigated through circular dichroism (CD) and the data thereof confirmed that the chromatographic silica gels are not amorphous but microcrystalline, contributing to the (partial) horizontal enantioseparation of the antimer pairs. This paper summarizes the results of our investigation on the microcrystalline nature of silica gels used in planar chromatography and their impact on enantioseparation of the selected pairs of antimers. (author)

Improved Electrochemical Cycling Durability in a Nickel Oxide Double-Layered Film.

Science.gov (United States)

Hou, Shuai; Zhang, Xiang; Tian, Yanlong; Zhao, Jiupeng; Geng, Hongbin; Qu, Huiying; Zhang, Hangchuan; Zhang, Kun; Wang, Binsheng; Gavrilyuk, Alexander; Li, Yao

2017-11-16

For the first time, a crystalline-amorphous double-layered NiO x film has been prepared by reactive radio frequency magnetron sputtering. This film has exhibited improved electrochemical cycling durability, whereas other electrochromic parameters have been maintained at the required level, namely, a short coloration/bleaching time (0.8 s/1.1 s) and an enhanced transmittance modulation range (62.2 %) at λ=550 nm. Additionally, the double-layered film has shown better reversibility than that of amorphous and crystalline single-layered films. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Experimental formation of a fractional vortex in a superconducting bi-layer

Science.gov (United States)

Tanaka, Y.; Yamamori, H.; Yanagisawa, T.; Nishio, T.; Arisawa, S.

2018-05-01

We report the experimental formation of a fractional vortex generated by using a thin superconducting bi-layer in the form of a niobium bi-layer, observed as a magnetic flux distribution image taken by a scanning superconducting quantum interference device (SQUID) microscope. Thus, we demonstrated that multi-component superconductivity can be realized by an s-wave conventional superconductor, because, in these superconductors, the magnetic flux is no longer quantized as it is destroyed by the existence of an inter-component phase soliton (i-soliton).

Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Zahidur R., E-mail: zr.chowdhury@utoronto.ca; Kherani, Nazir P., E-mail: kherani@ecf.utoronto.ca [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada)

2014-12-29

This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide–plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are V{sub OC} of 666 mV, J{sub SC} of 29.5 mA-cm{sup −2}, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

High-Gain Avalanche Rushing amorphous Photoconductor (HARP) detector

Energy Technology Data Exchange (ETDEWEB)

Tanioka, K. [NHK Science and Technical Research Laboratories, 1-10-11 Kinuta, Setagaya-ku, Tokyo 157-8510 (Japan)], E-mail: tanioka.k-jg@nhk.or.jp

2009-09-01

We have been studying a very sensitive image sensor since the early 1980s. In 1985, the author found for the first time that an experimental pickup tube with an amorphous selenium photoconductive target exhibits high sensitivity with excellent picture quality because of a continuous and stable avalanche multiplication phenomenon. We named the pickup tube with an amorphous photoconductive layer operating in the avalanche-mode 'HARP': High-gain Avalanche Rushing amorphous Photoconductor. A color camera equipped with the HARP pickup tubes has a maximum sensitivity of 11 lx at F8. This means that the HARP camera is about 100 times as sensitive as that of CCD camera for broadcasting. This ultrahigh-sensitivity HARP pickup tube is a powerful tool for reporting breaking news at night and other low-light conditions, the production of scientific programs, and numerous other applications, including medical diagnoses, biotech research, and nighttime surveillance. In addition, since the HARP target can convert X-rays into electrons directly, it should be possible to exploit this capability to produce X-ray imaging devices with unparalleled levels of resolution and sensitivity.

Macroscopic and microscopic magnetism of metal-metalloid amorphous alloys

International Nuclear Information System (INIS)

Vasconcellos, M.A.Z.; Fichtner, P.F.P.; Livi, F.P.; Costa, M.I. da; Baibich, M.N.

1984-01-01

In this paper is investigated the interrelation between macroscopic and microscopic magnetic phenomena using experimetnal data from Moessbauer effect and the magnetization of layers of amorphous (Fe 1-x Ni x ) 80 B 20 . The Moessbauer effect measurement show a distribution of hyperfine fields in Fe site as well as a likely distribution of isomeric shifts (M.W.O.) [pt

Crystallization of AlON layers and its effects on the microstructure and hardness of reactively synthesized ZrN/AlON nanomultilayers

Energy Technology Data Exchange (ETDEWEB)

Dong Yunshan; Yue Jianling; Liu Yan; Li Geyang [State Key Lab of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200030 (China)

2006-11-21

By reactively sputtering Zr and Al{sub 2}O{sub 3} targets in a gaseous mixture of Ar and N{sub 2}, ZrN/AlON nanomultilayers were synthesized to study the crystallization conditions for AlON layers and how they influence the characteristics of multilayers. The composition analysis indicated that some of the oxygen atoms were replaced by nitrogen atoms in Al{sub 2}O{sub 3}, leading to the formation of aluminium oxynitride, AlON, during the procedure of the Al{sub 2}O{sub 3} target being sputtered in the gaseous mixture. Further investigations showed that when their thickness was limited to less than 1 nm, amorphous AlON layers were crystallized under the template effects of crystalline ZrN layers, and then coherent interfaces formed as a result. Correspondingly, the multilayers were remarkably strengthened with hardness approaching a maximum of 33 GPa. After the layer thickness of AlON exceeded the critical value of 1 nm, the subsequently deposited AlON grew amorphously and blocked the epitaxial growth of multilayers, accompanied by the decline of hardness. Yet, on the other hand, the integrated hardness of multilayers was not sensitive to the thickness of the ZrN template layers and its value was maintained a bit higher than 30 GPa in a wide range of ZrN layer thickness variations.

Formation of nickel germanides from Ni layers with thickness below 10 nm

Energy Technology Data Exchange (ETDEWEB)

Jablonka, Lukas; Kubart, Tomas; Primetzhofer, Daniel; Abedin, Ahmad; Hellström, Per-Erik; Östling, Mikael; Jordan-Sweet, Jean; Lavoie, Christian; Zhang, Shi-Li; Zhang, Zhen

2017-03-01

The authors have studied the reaction between a Ge (100) substrate and thin layers of Ni ranging from 2 to 10 nm in thickness. The formation of metal-rich Ni5Ge3Ni5Ge3 was found to precede that of the monogermanide NiGe by means of real-time in situ x-ray diffraction during ramp-annealing and ex situ x-ray pole figure analyses for phase identification. The observed sequential growth of Ni5Ge3Ni5Ge3 and NiGe with such thin Ni layers is different from the previously reported simultaneous growth with thicker Ni layers. The phase transformation from Ni5Ge3Ni5Ge3 to NiGe was found to be nucleation-controlled for Ni thicknesses <5 nm<5 nm, which is well supported by thermodynamic considerations. Specifically, the temperature for the NiGe formation increased with decreasing Ni (rather Ni5Ge3Ni5Ge3) thickness below 5 nm. In combination with sheet resistance measurement and microscopic surface inspection of samples annealed with a standard rapid thermal processing, the temperature range for achieving morphologically stable NiGe layers was identified for this standard annealing process. As expected, it was found to be strongly dependent on the initial Ni thickness

Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors

International Nuclear Information System (INIS)

Li, H.L.; Lin, H.T.; Wu, Y.H.; Liu, T.; Zhao, Z.L.; Han, G.C.; Chong, T.C.

2006-01-01

We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature

Control of amorphous films properties in the case of combined sputtering of targets

International Nuclear Information System (INIS)

Okunev, V.D.; Yurov, A.G.

1979-01-01

A possibility of controlling amorphous film properties produced by combined sputtering of two targets: was investigated one of the targets was made of a basis material-polycrystalline CdGeAs 2 , the other one was made of a material of additives. As the additives the Ni,Co elements with low chemical activity and the Cu,Te additives with high chemical activity were used. Besides, to study the effect of deviation from amorphous CdGeAs 2 stoichiometry on film properties, the Gd,Ge,As additives were investigated. The various additives influence on electric conductivity of amorphous films has been studied. It is shown that approximately 1 at% Ni or Co contents results in reducing film specific resistance by 6 orders. Cu and Te introduction results in the change of the structure and type of amorphous layer conductivity. The conclusion has been drawn, that introduction of the elements with high chemical activity can be used as the method of producing films with new physicochemical properties

Carbon nanostructure formation driven by energetic particles

International Nuclear Information System (INIS)

Zhu Zhiyuan; Gong Jinlong; Zhu Dezhang

2006-01-01

Carbon nanostructures, especially carbon nanotubes (CNTs), have been envisaged to be the building blocks of a variety of nanoscale devices and materials. The inherent nanometer-size and ability of being either metallic or semiconductive of CNTs lead to their application in nanoelectronics. Excellent mechanical characteristics of CNTs suggest their use as structural reinforcements. However, to fully exploit the potential applications, effective means of tailoring CNT properties must be developed. Irradiation of materials with energetic particles beams (ions and electrons) is a standard and important tool for modifying material properties. Irradiation makes it possible to dope the samples, to create local amorphous region or vice versa, recrystallize the lattice and even drive a phase transition. In this paper, we report our results of (1) phase transfromation from carbon nanotubes to nanocrystalline diamond driven by hydrogen plasma, (2) onion-like nanostructure from carbon nanotubes driven by ion beams of several tens keV, and (3) amorphous carbon nanowire network formation by ion beam irradiation. Structural phase transformation from multiwalled carbon nanotubes to nanocrystalline diamond by hydrogen plasma post-treatment was carried out. Ultrahigh equivalent diamond nucleation density of more than 1011 nuclei/cm 2 was obtained. The diamond formation and growth mechanisms were proposed to be the consequence of the formation of sp3 bonded amorphous carbon clusters. The hydrogen chemisorption on curved graphite network and the energy deposited on CNTs by continuous impingement of activated molecular or atomic hydrogen are responsible for the formation of amorphous carbon matrix. Diamond nucleates and grows in the way similar to that of diamond chemical vapor deposition processes on amorphous carbon films. Furthermore, single crystalline diamond nanorods of 4-8 nm in diameter and up to 200 nm in length have been successfully synthesized by hydrogen plasma post

Thick and low-stress PECVD amorphous silicon for MEMS applications

International Nuclear Information System (INIS)

Iliescu, Ciprian; Chen Bangtao

2008-01-01

This paper presents a solution for the deposition of thick amorphous silicon (α-Si:H) in PECVD reactors for MEMS applications, such as sacrificial layer or mask layer for dry or wet etching of glass. This achievement was possible by tuning the deposition parameters to a 'zero' value of the residual stress in the α-Si:H layer. The influence of the process parameters, such as power, frequency mode, temperature, pressure and SiH 4 /Ar flow rates for tuning the residual stress and for a good deposition rate is analyzed. The deposition of low-stress and thick (more than 12 µm in our case) α-Si:H layers was possible without generation of hillock defects (previously reported in literature for layers thicker then 2 µm). Finally, the paper presents some MEMS applications of such a deposited α-Si:H layer: masking layer for deep wet etching as well as dry etching of glass, and sacrificial layer for dry or wet release

Locomotion of Amorphous Surface Robots

Science.gov (United States)

Bradley, Arthur T. (Inventor)

2018-01-01

An amorphous robot includes a compartmented bladder containing fluid, a valve assembly, and an outer layer encapsulating the bladder and valve assembly. The valve assembly draws fluid from a compartment(s) and discharges the drawn fluid into a designated compartment to displace the designated compartment with respect to the surface. Another embodiment includes elements each having a variable property, an outer layer that encapsulates the elements, and a control unit. The control unit energizes a designated element to change its variable property, thereby moving the designated element. The elements may be electromagnetic spheres with a variable polarity or shape memory polymers with changing shape and/or size. Yet another embodiment includes an elongated flexible tube filled with ferrofluid, a moveable electromagnet, an actuator, and a control unit. The control unit energizes the electromagnet and moves the electromagnet via the actuator to magnetize the ferrofluid and lengthen the flexible tube.

Iron-based amorphous alloys and methods of synthesizing iron-based amorphous alloys

Science.gov (United States)

Saw, Cheng Kiong; Bauer, William A.; Choi, Jor-Shan; Day, Dan; Farmer, Joseph C.

2016-05-03

A method according to one embodiment includes combining an amorphous iron-based alloy and at least one metal selected from a group consisting of molybdenum, chromium, tungsten, boron, gadolinium, nickel phosphorous, yttrium, and alloys thereof to form a mixture, wherein the at least one metal is present in the mixture from about 5 atomic percent (at %) to about 55 at %; and ball milling the mixture at least until an amorphous alloy of the iron-based alloy and the at least one metal is formed. Several amorphous iron-based metal alloys are also presented, including corrosion-resistant amorphous iron-based metal alloys and radiation-shielding amorphous iron-based metal alloys.

Development of the α-IGZO/Ag/α-IGZO Triple-Layer Structure Films for the Application of Transparent Electrode

OpenAIRE

Kun-Neng Chen; Cheng-Fu Yang; Chia-Ching Wu; Yu-Hsin Chen

2017-01-01

We investigated the structural, optical, and electrical properties of amorphous IGZO/silver/amorphous IGZO (?-IGZO/Ag/?-IGZO) triple-layer structures that were deposited at room temperature on Eagle XG glass and flexible polyethylene terephthalate substrates through the sputtering method. Thin Ag layers with different thicknesses were inserted between two IGZO layers to form a triple-layer structure. Ag was used because of its lower absorption and resistivity. Field emission scanning electron...

Reactive diffusion in Sc/Si multilayer X-ray mirrors with CrB2 barrier layers

International Nuclear Information System (INIS)

Pershyn, Y.P.; Zubarev, E.N.; Kondratenko, V.V.; Sevryukova, V.A.; Kurbatova, S.V.

2011-01-01