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Sample records for amorphous ge bipolar

  1. Atomistic simulation of damage accumulation and amorphization in Ge

    Energy Technology Data Exchange (ETDEWEB)

    Gomez-Selles, Jose L., E-mail: joseluis.gomezselles@imdea.org; Martin-Bragado, Ignacio [IMDEA Materials Institute, Eric Kandel 2, 28906 Getafe, Madrid (Spain); Claverie, Alain [CEMES/CNRS, 29 rue J. Marvig, 31055 Toulouse Cedex (France); Sklenard, Benoit [CEA, LETI, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Benistant, Francis [GLOBALFOUNDRIES Singapore Pte Ltd., 60 Woodlands Industrial Park D Street 2, Singapore 738406 (Singapore)

    2015-02-07

    Damage accumulation and amorphization mechanisms by means of ion implantation in Ge are studied using Kinetic Monte Carlo and Binary Collision Approximation techniques. Such mechanisms are investigated through different stages of damage accumulation taking place in the implantation process: from point defect generation and cluster formation up to full amorphization of Ge layers. We propose a damage concentration amorphization threshold for Ge of ∼1.3 × 10{sup 22} cm{sup −3} which is independent on the implantation conditions. Recombination energy barriers depending on amorphous pocket sizes are provided. This leads to an explanation of the reported distinct behavior of the damage generated by different ions. We have also observed that the dissolution of clusters plays an important role for relatively high temperatures and fluences. The model is able to explain and predict different damage generation regimes, amount of generated damage, and extension of amorphous layers in Ge for different ions and implantation conditions.

  2. Atomistic simulation of damage accumulation and amorphization in Ge

    International Nuclear Information System (INIS)

    Damage accumulation and amorphization mechanisms by means of ion implantation in Ge are studied using Kinetic Monte Carlo and Binary Collision Approximation techniques. Such mechanisms are investigated through different stages of damage accumulation taking place in the implantation process: from point defect generation and cluster formation up to full amorphization of Ge layers. We propose a damage concentration amorphization threshold for Ge of ∼1.3 × 1022 cm−3 which is independent on the implantation conditions. Recombination energy barriers depending on amorphous pocket sizes are provided. This leads to an explanation of the reported distinct behavior of the damage generated by different ions. We have also observed that the dissolution of clusters plays an important role for relatively high temperatures and fluences. The model is able to explain and predict different damage generation regimes, amount of generated damage, and extension of amorphous layers in Ge for different ions and implantation conditions

  3. Ge nitride formation in N-doped amorphous Ge2Sb2Te5

    International Nuclear Information System (INIS)

    The chemical state of N in N-doped amorphous Ge2Sb2Te5 (a-GST) samples with 0-14.3 N at. % doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge x-ray absorption spectroscopy (XAS). HRXPS showed negligible change in the Te 4d and Sb 4d core-level spectra. In the Ge 3d core-level spectra, a Ge nitride (GeNx) peak developed at the binding energy of 30.2 eV and increased in intensity as the N-doping concentration increased. Generation of GeNx was confirmed by the Ge K-edge absorption spectra. These results indicate that the N atoms bonded with the Ge atoms to form GeNx, rather than bonding with the Te or Sb atoms. It has been suggested that the formation of Ge nitride results in increased resistance and phase-change temperature

  4. Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

    International Nuclear Information System (INIS)

    In this work, we discuss the characteristics of particular island-type features with an amorphous core that are developed during the low temperature epitaxial growth of Ge and GeSn layers by means of chemical vapor deposition with Ge2H6. Although further investigations are needed to unambiguously identify the origin of these features, we suggest that they are originated by the formation of clusters of H and/or contaminants atoms during growth. These would initially cause the formation of pits with crystalline rough facets over them, resulting in ring-shaped islands. Then, when an excess surface energy is overcome, an amorphous phase would nucleate inside the pits and fill them. Reducing the pressure and/or increasing the growth temperature can be effective ways to prevent the formation of these features, likely due to a reduction of the surface passivation from H and/or contaminant atoms. - Highlights: • Island features with amorphous cores develop during low T Ge(Sn) CVD with Ge2H6. • These features are thoroughly characterized in order to understand their origin. • A model is proposed to describe the possible evolution of these features. • Lower pressures and/or higher temperatures avoid the formation of these features

  5. Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gencarelli, F., E-mail: federica.gencarelli@imec.be [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium); Shimura, Y. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Kumar, A. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Vincent, B.; Moussa, A.; Vanhaeren, D.; Richard, O.; Bender, H. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, W. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Caymax, M.; Loo, R. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, M. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium)

    2015-09-01

    In this work, we discuss the characteristics of particular island-type features with an amorphous core that are developed during the low temperature epitaxial growth of Ge and GeSn layers by means of chemical vapor deposition with Ge{sub 2}H{sub 6}. Although further investigations are needed to unambiguously identify the origin of these features, we suggest that they are originated by the formation of clusters of H and/or contaminants atoms during growth. These would initially cause the formation of pits with crystalline rough facets over them, resulting in ring-shaped islands. Then, when an excess surface energy is overcome, an amorphous phase would nucleate inside the pits and fill them. Reducing the pressure and/or increasing the growth temperature can be effective ways to prevent the formation of these features, likely due to a reduction of the surface passivation from H and/or contaminant atoms. - Highlights: • Island features with amorphous cores develop during low T Ge(Sn) CVD with Ge{sub 2}H{sub 6.} • These features are thoroughly characterized in order to understand their origin. • A model is proposed to describe the possible evolution of these features. • Lower pressures and/or higher temperatures avoid the formation of these features.

  6. Anisotropic phase separation in amorphous Fe--Ge alloys

    International Nuclear Information System (INIS)

    Magnetron sputtered amorphous FexGe100-x films have been examined with anomalous small-angle x-ray scattering (ASAXS) in an attempt to characterize composition fluctuations which have been previously reported in this system. Films grown under various deposition conditions have been studied, with the scattering vector both in and oblique to the plane of the films, to search for anisotropy. By manipulating the deposited power flux and rates of growth, films which have the same composition can be grown to different states of phase separation. The total correlation functions have been calculated from the oblique scattering experiments. The anisotropy can be successfully modeled as a close-packing of oriented prolate ellipsoidal particles, with the elongated axis along the direction of film growth. A method for using these measurements to determine the compositions of the phase-separating species has been developed and utilized. The results indicate phase separation into a-Ge and a-FeGe2 for the a-FexGe100-x (x<33) alloy

  7. Optical studies of amorphous Ge nanostructures in Al2O3 produced by pulsed laser deposition

    International Nuclear Information System (INIS)

    Thin films with embedded amorphous Ge nanostructures are characterised by in-situ and post-deposition techniques in order to study their size-dependent properties. The films are multilayer structures in which Ge nanostructured layers with effective thickness are separated by amorphous aluminium oxide layers (Al2O3). During deposition in-situ reflectivity measurements are used to achieve information on the amount of Ge deposited and on the Al2O3 coverage. The effective optical properties of the films were obtained from spectroscopic ellipsometry measurement analysis. Our results suggest a topological evolution of the Ge nanostructures as a function of the Ge content and the existence of size-dependent quantum confinement effects in the nanostructures. - Highlights: ► Amorphous Ge nanostructures with tunable optical band-gap embedded in Al2O3 matrix ► In-situ reflectivity characterisation of amorphous Ge nanostructure ► Ex-situ spectroscopic ellipsometry characterisation of amorphous Ge nanostructures ► Size-dependent optical band-gap study of amorphous Ge nanostructures

  8. Photoinduced effects in amorphous semiconductor Ge(S, Se)2 chalcogenide films

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The blue shift of optical transmittance edges were observed in amorphous semiconductor Ge(S, Se)2 chalcogenide films with light illumination. The shift in well-annealed films could be recovered by annealing the films near the glass-transition temperature again. The photocrystallization was also observed in amorphous Ge(S,Se)2 films with light illumination by the transmitting electron microscope measurement. The photoinduced phenomina of the amorphous Ge(S,Se)2 films could be applied to designing some new kinds of optical storage materials.

  9. Neutron interactions with germanium isotopes and amorphous and crystalline GeO2

    Science.gov (United States)

    Koester, L.; Knopf, K.; Waschkowski, W.

    1987-06-01

    Coherent neutron scattering lengths and total cross sections have been measured on elemental and oxide samples of ordinary Ge and of isotopically enriched substances. From the experimental results the following values were obtained: the coherent scattering lengths (in fm) of the bound atoms Ge(8.185±0.020);70Ge(10.0±0.1);72Ge(8.51±0.10);73Ge(5.02±0.04);74Ge(7.58±0.10) and76Ge(8.2 ±1.5); the absorption cross sections at 0.0253 eV (in barn) for Ge(2.20±0.04);70Ge(2.9±0.2);72Ge(0.8±0.2);73Ge(14.4±0.4) and74Ge(0.4±0.2); the free cross sections for epithermal neutrons and the zero energy scattering cross sections. On the basis of this data, the isotopic- and spin-incoherent cross sections and the s-wave resonance contributions to the coherent scattering lengths have been determined and discussed. Transmission measurements at 0.57 meV on amorphous and crystalline GeO2 yielded for the amorphous sample an inelastic cross section eight times larger than for the crystalline samples. This effect corresponds to a clearly higher density of low energy states in the amorphous than in the crystalline substances.

  10. Neutron interactions with germanium isotopes and amorphous and crystalline GeO2

    International Nuclear Information System (INIS)

    Coherent neutron scattering lengths and total cross sections have been measured on elemental and oxide samples of ordinary Ge and of isotopically enriched substances. From the experimental results the following values were obtained: - the coherent scattering lengths (in fm) of the bound atoms Ge(8.185±0.020); 70Ge(10.0±0.1); 72Ge(8.51±0.10); 73Ge(5.02±0.04); 74Ge(7.58±0.10) and 76Ge(8.2±1.5); - the absorption cross section at 0.0253 eV (in barn) for Ge(2.20±0.04); 70Ge(2.9±0.2); 72Ge(0.8±0.2); 73Ge(14.4±0.4) and 74Ge(0.4±0.2); - the free cross sections for epithermal neutrons and the zero energy scattering cross sections. On the basis of this data, the isotopic- and spin-incoherent cross sections and the s-wave resonance contributions to the coherent scattering lengths have been determined and discussed. Transmission measurements at 0.57 meV on amorphous and crystalline GeO2 yielded for the amorphous sample an inelastic cross section eight times larger than for the crystalline samples. This effect corresponds to a clarly higher density of low energy states in the amorphous than in the crystalline substances. (orig.)

  11. Doping profile and Ge-dose optimization for silicon–germanium heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    The speed of silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) has been dramatically increased. It is known that the speed of HBTs is dominated by the base transit time, which could be influenced by the doping profile in the base region and the Ge concentration. In this study, the design of the doping profile and Ge-dose concentration for SiGe HBTs are mathematically formulated and solved by a technique of geometric programming (GP). The solution calculated by the GP method is guaranteed to be a global optimal. The accuracy of the adopted numerical optimization technique is first confirmed by comparing with two-dimensional device simulation. The result of this study shows that a 23% Ge fraction may maximize the current gain; furthermore, a 12.5% Ge may maximize the cut-off frequency for the explored device, where a 254 GHz cut-off frequency is achieved

  12. Short-range order of compressed amorphous GeSe2

    OpenAIRE

    L. Properzi; Di Cicco, A; Nataf, L.; Baudelet, F.; Irifune, T

    2015-01-01

    The structure of amorphous GeSe2 (a-GeSe2) has been studied by means of a combination of two-edges X-ray absorption spectroscopy (XAS) and angle-dispersive X-ray diffraction under pressures up to about 30 GPa. Multiple-edge XAS data-analysis of a-GeSe2 at ambient conditions allowed us to reconstruct and compare the first-neighbor distribution function with previous results obtained by neutron diffraction with isotopic substitution. GeSe2 is found to remain amorphous up to the highest pressure...

  13. Ni-based amorphous alloy-coating for bipolar plate of PEM fuel cell by electrochemical plating

    International Nuclear Information System (INIS)

    In this study, the Ni-Cr-P amorphous alloy-coated bipolar plates were produced by electro-plating on the Cu base plates with a flow field. The power generation tests of a single fuel cell with those Ni-Cr-P bipolar plates were conducted at 353 K. It was found that the single fuel cell with those Ni-Cr-P bipolar plates showed excellent I-V performance as well as that with the carbon graphite bipolar plates. It was also found that the single cell with those Ni-Cr-P bipolar plates showed better I-V performance than that with the Ni-P amorphous alloy-coated bipolar plates. Furthermore, the long-time operation test was conducted for 440 h with those Ni-Cr-P bipolar plates at the constant current density of 200 mA·cm−2. As a result, it was found that the cell voltage gradually decreased at the beginning of the measurement before 300 h and then the voltage was kept constant after 300 h.

  14. Anisotropic phase separation through the metal-insulator transition in amorphous Mo-Ge and Fe-Ge alloys

    Energy Technology Data Exchange (ETDEWEB)

    Regan, M.J.

    1993-12-01

    Since an amorphous solid is often defined as that which lacks long-range order, the atomic structure is typically characterized in terms of the high-degree of short-range order. Most descriptions of vapor-deposited amorphous alloys focus on characterizing this order, while assuming that the material is chemically homogeneous beyond a few near neighbors. By coupling traditional small-angle x-ray scattering which probes spatial variations of the electron density with anomalous dispersion which creates a species-specific contrast, one can discern cracks and voids from chemical inhomogeneity. In particular, one finds that the chemical inhomogeneities which have been previously reported in amorphous Fe{sub x}Ge{sub 1-x} and Mo{sub x}Ge{sub 1-x} are quite anisotropic, depending significantly on the direction of film growth. With the addition of small amounts of metal atoms (x<0.2), no films appear isotropic nor homogeneous through the metal/insulator transition. The results indicate that fluctuations in the growth direction play a pivotal role in preventing simple growth models of a columnar structure or one that evolves systematically as it grows. The anomalous scattering measurements identify the metal atoms (Fe or Mo) as the source of the anisotropy, with the Ge atoms distributed homogeneously. The author has developed a method for using these measurements to determine the compositions of the phase-separating species. The results indicate phase separation into an amorphous Ge and an intermetallic phase of stoichiometry close to FeGe{sub 2} or MoGe{sub 3}. Finally, by manipulating the deposited power flux and rates of growth, Fe{sub x}Ge{sub 1-x} films which have the same Fe composition x can be grown to different states of phase separation. These results may help explain the difficulty workers have had in isolating the metal/insulator transition for these and other vapor-deposited amorphous alloys.

  15. Effect of ion irradiation on the stability of amorphous Ge2Sb2Te5 thin films

    International Nuclear Information System (INIS)

    The archival life of phase-change memories (PCM) is determined by the thermal stability of amorphous phase in a crystalline matrix. In this paper, we report the effect of ion beam irradiation on the crystallization kinetics of amorphous Ge2Sb2Te5 alloy (GST). The transition rate of amorphous GST films was measured by in situ time resolved reflectivity (TRR). The amorphous to crystal transformation time decreases considerably in irradiated amorphous GST samples when ion fluence increases. The stability of amorphous Ge2Sb2Te5 thin films subjected to ion irradiation is discussed in terms of the free energy variation of the amorphous state because of damage accumulation

  16. Structure of amorphous Ag/Ge/S alloys: experimentally constrained density functional study

    Science.gov (United States)

    Akola, J.; Beuneu, B.; Jones, R. O.; Jóvári, P.; Kaban, I.; Kolář, J.; Voleská, I.; Wágner, T.

    2015-12-01

    Density functional/molecular dynamics simulations have been performed to determine structural and other properties of amorphous Ag/Ge/S and Ge/S alloys. In the former, the calculations have been combined with experimental data (x-ray and neutron diffraction, extended x-ray absorption fine structure). Ag/Ge/As alloys have high ionic conductivity and are among the most promising candidates for future memristor technology. We find excellent agreement between the experimental results and large-scale (500 atoms) simulations in Ag/Ge/S, and we compare and contrast the structures of Ge/S and Ag/Ge/S. The calculated electronic structures, vibrational densities of states, ionic mobilities, and cavity distributions of the amorphous materials are discussed and compared with data on crystalline phases where available. The high mobility of Ag in solid state electrolyte applications is related to the presence of cavities and can occur via jumps to a neighbouring vacant site.

  17. Nanostructuring of GeTiO amorphous films by pulsed laser irradiation

    Directory of Open Access Journals (Sweden)

    Valentin S. Teodorescu

    2015-04-01

    Full Text Available Laser pulse processing of surfaces and thin films is a useful tool for amorphous thin films crystallization, surface nanostructuring, phase transformation and modification of physical properties of thin films. Here we show the effects of nanostructuring produced at the surface and under the surface of amorphous GeTiO films through laser pulses using fluences of 10–30 mJ/cm2. The GeTiO films were obtained by RF magnetron sputtering with 50:50 initial atomic ratio of Ge:TiO2. Laser irradiation was performed by using the fourth harmonic (266 nm of a Nd:YAG laser. The laser-induced nanostructuring results in two effects, the first one is the appearance of a wave-like topography at the film surface, with a periodicity of 200 nm and the second one is the structure modification of a layer under the film surface, at a depth that is related to the absorption length of the laser radiation. The periodicity of the wave-like relief is smaller than the laser wavelength. In the modified layer, the Ge atoms are segregated in spherical amorphous nanoparticles as a result of the fast diffusion of Ge atoms in the amorphous GeTiO matrix. The temperature estimation of the film surface during the laser pulses shows a maximum of about 500 °C, which is much lower than the melting temperature of the GeTiO matrix. GeO gas is formed at laser fluences higher than 20 mJ/cm2 and produces nanovoids in the laser-modified layer at the film surface. A glass transition at low temperatures could happen in the amorphous GeTiO film, which explains the formation of the wave-like topography. The very high Ge diffusivity during the laser pulse action, which is characteristic for liquids, cannot be reached in a viscous matrix. Our experiments show that the diffusivity of atomic and molecular species such as Ge and GeO is very much enhanced in the presence of the laser pulse field. Consequently, the fast diffusion drives the formation of amorphous Ge nanoparticles through the

  18. Electrical characteristics of SiGe-base bipolar transistors on thin-film SOI substrates

    International Nuclear Information System (INIS)

    This paper, based on two-dimensional simulations, provides a comprehensive analysis of the electrical characteristics of the Silicon germanium (SiGe)-base bipolar transistors on thin-film siliconon-insulator (SOI) substrates. The impact of the buried oxide thickness (TOX), the emitter width (WE), and the lateral distance between the edge of the intrinsic base and the reach-through region (Lcol) on both the AC and DC device characteristics was analyzed in detail. Regarding the DC characteristics, the simulation results suggest that a thicker TOX gives a larger base-collector breakdown voltage (BVCEO), whereas reducing the TOX leads to an enhanced maximum electric field at the B-C junction. As for the AC characteristics, cut-off frequency (fT ) increases slightly with increasing buried oxide thickness and finally saturates to a constant value when the buried oxide thickness is about 0.15 μm. The collector-substrate capacitance (CCS) decreases with increasing buried oxide thickness while the maximum oscillation frequency (fmax) increases with increasing buried oxide thickness. Furthermore, the impact of self-heating effects in the device was analyzed in various areas. The thermal resistance as a function of the buried oxide thickness indicates that the thermal resistance of the SiGe-base bipolar transistor on a SOI substrate is slightly higher than that of a bulk SiGe-base bipolar transistor. The thermal resistance is reduced by ∼37.89% when the emitter width is increased by a factor of 5 for a fixed buried oxide thickness of 0.1 μm. All the results can be used to design and optimize SiGe-base bipolar transistors on SOI substrates with minimum thermal resistance to enhance device performance.

  19. Anisotropic phase separation through the metal-insulator transition in amorphous Mo-Ge and Fe-Ge alloys

    International Nuclear Information System (INIS)

    Since an amorphous solid is often defined as that which lacks long-range order, the atomic structure is typically characterized in terms of the high-degree of short-range order. Most descriptions of vapor-deposited amorphous alloys focus on characterizing this order, while assuming that the material is chemically homogeneous beyond a few near neighbors. By coupling traditional small-angle x-ray scattering which probes spatial variations of the electron density with anomalous dispersion which creates a species-specific contrast, one can discern cracks and voids from chemical inhomogeneity. In particular, one finds that the chemical inhomogeneities which have been previously reported in amorphous FexGe1-x and MoxGe1-x are quite anisotropic, depending significantly on the direction of film growth. With the addition of small amounts of metal atoms (x2 or MoGe3. Finally, by manipulating the deposited power flux and rates of growth, FexGe1-x films which have the same Fe composition x can be grown to different states of phase separation. These results may help explain the difficulty workers have had in isolating the metal/insulator transition for these and other vapor-deposited amorphous alloys

  20. Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

    Institute of Scientific and Technical Information of China (English)

    Xu Xiao-Bo; Zhang He-Ming; Hu Hui-Yong; Ma Jian-Li

    2011-01-01

    Silicon germanium (SiGe) heterojunction bipolar transistor (HBT) on thin silicon-on-insulator (SOI) has recently been demonstrated and integrated into the latest SOI BiCMOS technology. The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion, which is different from that of a bulk counterpart. A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation. The Early voltage shows a kink with the increase of the reverse base-collector bias. Large differences are observed between SOI devices and their bulk counterparts. The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design, the simulation and the fabrication of high performance SOI SiGe devices and circuits.

  1. Influence of the additive Ag for crystallization of amorphous Ge-Sb-Te thin films

    International Nuclear Information System (INIS)

    We have investigated the optical and amorphous-to-crystalline transition properties in four-types of chalcogenide thin films; Ge2Sb2Te5, Ge8Sb2Te11, Ag-Ge2Sb2Te5 and Ag-Ge8Sb2Te11. Crystallization was caused by nano-pulse illumination (λ = 658 nm) with power (P) of 1-17 mW and pulse duration (t) of 10-460 ns, and the morphologies of crystallized spots were observed by SEM and microscope. It was found that the crystallized spot nearby linearly increases in size with increasing the illuminating energy (E = P · t) and eventually ablated out by over illumination. Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-vis-IR spectrophotometer. In addition, a speed of amorphous-to-crystalline transition was evaluated by detecting the reflection response signals for the nano-pulse scanning. Conclusively, the Ge8Sb2Te11 film has a faster crystallization speed than the Ge2Sb2Te5 film despite its higher crystallization temperature. The crystallization speed was largely improved by adding Ag in Ge2Sb2Te5 film but not in Ge8Sb2Te11 film. To explain these results, we considered a heat confinement by electron hopping.

  2. Direct observation of Ag filament growth and unconventional SET-RESET operation in GeTe amorphous films

    Science.gov (United States)

    Imanishi, Yusuke; Kida, Shimon; Nakaoka, Toshihiro

    2016-07-01

    We report on the direct observation of Ag filament growth and a peculiar resistance switching in amorphous GeTe films with a lateral electrode geometry. The Ag filament growth was monitored by in-situ optical microscopy. The resistance switching was studied in three electrode pairs, Ag-Ag, Pt-Ag, and Pt-Ag/Pt (Ag electrode covered with Pt). In all the three electrode pairs, similar dendritic Ag filaments were clearly observed growing along both directions from one electrode to the other, according to the applied bias polarity. However, the SET and RESET processes are quite different. The Ag-Ag pair produces a unipolar clockwise switching. The Pt-Ag pair shows a bipolar counter-clockwise switching, as predicted in the basic electrochemical metallization theory, but the observed switching polarity is exactly opposite to the basic theory prediction. The Pt-Ag/Pt pair produces a unipolar counter-clockwise switching. The peculiar SET/RESET processes are explained on the basis of strong Ag diffusion into GeTe matrix resulting in an asymmetric effective electrode pair. The findings suggest that the SET/RESET processes are controlled by the amount of Ag and the electrode geometry.

  3. Self-organization of a periodic structure between amorphous and crystalline phases in a GeTe thin film induced by femtosecond laser pulse amorphization

    International Nuclear Information System (INIS)

    A self-organized fringe pattern in a single amorphous mark of a GeTe thin film was formed by multiple femtosecond pulse amorphization. Micro Raman measurement indicates that the fringe is a periodic alternation between crystalline and amorphous phases. The period of the fringe is smaller than the irradiation wavelength and the direction is parallel to the polarization direction. Snapshot observation revealed that the fringe pattern manifests itself via a complex but coherent process, which is attributed to crystallization properties unique to a nonthermally amorphized phase and the distinct optical contrast between crystalline and amorphous phases.

  4. Structure of amorphous Ge8Sb2Te11 : GeTe-Sb2Te3 alloys and optical storage

    Science.gov (United States)

    Akola, J.; Jones, R. O.

    2009-04-01

    The amorphous structure of Ge8Sb2Te11 , an alloy used in the Blu-ray Disc, the de facto successor to digital versatile disk (DVD) optical storage, has been characterized by large-scale (630 atoms, 0.4 ns) density-functional/molecular-dynamics simulations using the new PBEsol approximation for the exchange-correlation energy functional. The geometry and electronic structure agree well with available x-ray diffraction data and photoelectron measurements. The total coordination numbers are Ge: 4.0, Sb: 3.7, and Te: 2.9, and the Ge-Ge partial coordination number is 0.7. Most atoms (particularly Sb) prefer octahedral coordination but 42% of Ge atoms are “tetrahedral.” Structural details, including ring statistics, local coordination, and cavities (12% of total volume), are strikingly similar to those of Ge2Sb2Te5 , which is used in DVD-random access memory. The presence of less than 10% Sb atoms leads to significant changes from GeTe.

  5. Heat capacity of amorphous and disordered Nb3Ge thin films

    International Nuclear Information System (INIS)

    Heat capacity measurements on 1000 to 1500A thick amorphous Nb3Ge and granular Al films have been carried out using an ac technique. The major goal of the experiment was to study the effect of thermal fluctuations, both above and below the superconducting transition temperature T/sub c/, in dirty, short meanfree path materials

  6. Short-range order of compressed amorphous GeSe2.

    Science.gov (United States)

    Properzi, L; Di Cicco, A; Nataf, L; Baudelet, F; Irifune, T

    2015-01-01

    The structure of amorphous GeSe2 (a-GeSe2) has been studied by means of a combination of two-edges X-ray absorption spectroscopy (XAS) and angle-dispersive X-ray diffraction under pressures up to about 30 GPa. Multiple-edge XAS data-analysis of a-GeSe2 at ambient conditions allowed us to reconstruct and compare the first-neighbor distribution function with previous results obtained by neutron diffraction with isotopic substitution. GeSe2 is found to remain amorphous up to the highest pressures attained, and a reversible 1.5 eV red-shift of the Ge K-edge energy indicating metallization, occurs between 10 GPa and 15 GPa. Two compression stages are identified by XAS structure refinement. First, a decrease of the first-neighbor distances up to about 10 GPa, in the same pressure region of a previously observed breakdown of the intermediate-range order. Second, an increase of the Ge-Se distances, bond disorder, and of the coordination number. This stage is related to a reversible non-isostructural transition involving a gradual conversion from tetra- to octa-hedral geometry which is not yet fully completed at 30 GPa. PMID:25973778

  7. Amorphous Ge quantum dots embedded in crystalline Si: ab initio results

    International Nuclear Information System (INIS)

    We study amorphous Ge quantum dots embedded in a crystalline Si matrix through structure modeling and simulation using ab initio density functional theory including spin–orbit interaction and quasiparticle effects. Three models are generated by replacing a spherical region within diamond Si by Ge atoms and creating a disordered bond network with appropriate density inside the Ge quantum dot. After total-energy optimisations of the atomic geometry we compute the electronic and optical properties. We find three major effects: (i) the resulting nanostructures adopt a type-I heterostructure character; (ii) the lowest optical transitions occur only within the Ge quantum dots, and do not involve or cross the Ge–Si interface. (iii) for larger amorphous Ge quantum dots, with diameters of about 2.0 and 2.7 nm, absorption peaks appear in the mid-infrared spectral region. These are promising candidates for intense luminescence at photon energies below the gap energy of bulk Ge. (paper)

  8. Tracks and voids in amorphous Ge induced by swift heavy-ion irradiation.

    Science.gov (United States)

    Ridgway, M C; Bierschenk, T; Giulian, R; Afra, B; Rodriguez, M D; Araujo, L L; Byrne, A P; Kirby, N; Pakarinen, O H; Djurabekova, F; Nordlund, K; Schleberger, M; Osmani, O; Medvedev, N; Rethfeld, B; Kluth, P

    2013-06-14

    Ion tracks formed in amorphous Ge by swift heavy-ion irradiation have been identified with experiment and modeling to yield unambiguous evidence of tracks in an amorphous semiconductor. Their underdense core and overdense shell result from quenched-in radially outward material flow. Following a solid-to-liquid phase transformation, the volume contraction necessary to accommodate the high-density molten phase produces voids, potentially the precursors to porosity, along the ion direction. Their bow-tie shape, reproduced by simulation, results from radially inward resolidification. PMID:25165936

  9. Anisotropic flux penetration into amorphous Mo80Ge20 square networks

    International Nuclear Information System (INIS)

    Highlights: • Anisotropic flux penetrations into superconducting MoGe networks are studied. • Anisotropies are compared well with the earlier Ginzburg–Landau simulation. • Diagonal penetrations occur when a period of networks matches a penetration depth. • Intrinsic properties are revealed by using MoGe films with weak-pinnings. - Abstract: We have investigated anisotropic flux penetrations into superconducting amorphous Mo80Ge20 square networks by using a magneto-optical imaging method. Pinning force dependence of the anisotropy is investigated by changing the fabrication process of the Mo80Ge20 thin films. Diagonal flux penetration becomes more dominant with less pinning sites, which is consistent with the earlier prediction with the time-dependent Ginzburg–Landau simulation with an assumption of pinning-force free in superconducting region. These results strongly indicate that the diagonal flux penetration in the square superconducting networks with weak pinning is intrinsic

  10. Influence of the additive Ag for crystallization of amorphous Ge-Sb-Te thin films

    Energy Technology Data Exchange (ETDEWEB)

    Song, Ki-Ho; Kim, Sung-Won; Seo, Jae-Hee [Faculty of Applied Chemical Engineering, Chonnam National University, 300 Yongbong-dong, Kwangju 500-757 (Korea, Republic of); Lee, Hyun-Yong, E-mail: hyleee@chonnam.ac.k [Faculty of Applied Chemical Engineering, Chonnam National University, 300 Yongbong-dong, Kwangju 500-757 (Korea, Republic of)

    2009-05-29

    We have investigated the optical and amorphous-to-crystalline transition properties in four-types of chalcogenide thin films; Ge{sub 2}Sb{sub 2}Te{sub 5}, Ge{sub 8}Sb{sub 2}Te{sub 11}, Ag-Ge{sub 2}Sb{sub 2}Te{sub 5} and Ag-Ge{sub 8}Sb{sub 2}Te{sub 11}. Crystallization was caused by nano-pulse illumination ({lambda} = 658 nm) with power (P) of 1-17 mW and pulse duration (t) of 10-460 ns, and the morphologies of crystallized spots were observed by SEM and microscope. It was found that the crystallized spot nearby linearly increases in size with increasing the illuminating energy (E = P {center_dot} t) and eventually ablated out by over illumination. Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-vis-IR spectrophotometer. In addition, a speed of amorphous-to-crystalline transition was evaluated by detecting the reflection response signals for the nano-pulse scanning. Conclusively, the Ge{sub 8}Sb{sub 2}Te{sub 11} film has a faster crystallization speed than the Ge{sub 2}Sb{sub 2}Te{sub 5} film despite its higher crystallization temperature. The crystallization speed was largely improved by adding Ag in Ge{sub 2}Sb{sub 2}Te{sub 5} film but not in Ge{sub 8}Sb{sub 2}Te{sub 11} film. To explain these results, we considered a heat confinement by electron hopping.

  11. The effect of fluorine in low thermal budget polysilicon emitters for SiGe heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    This thesis investigates the behaviour of fluorine in two types of polysilicon emitter. In the first type the emitter is deposited at 610 deg. C as polycrystalline silicon (p-Si). In the second type the emitter is deposited at 560 deg. C as amorphous silicon (α-Si). The amorphous silicon 1 then regrows to polysilicon during subsequent high temperature anneals. Remarkably different behaviour of fluorine is seen in as-deposited α-Si and as-deposited p-Si emitter bipolar transistors. In the most extreme case, fluorine-implanted as-deposited p-Si devices show a base current increase by a factor of 1.5 and equivalent α-Si devices a base current decrease by a factor of 10.0 compared to unimplanted devices. Cross-section TEM observations are made to study the structure of the polysilicon/silicon interface and SIMS measurements to study the distribution of the fluorine in the polysilicon. The TEM results correlate well with the electrical results and show that fluorine accelerates interfacial oxide breakup. Furthermore, they show that for a given thermal budget, more interfacial oxide breakup and thus more epitaxial regrowth is obtained for transistors with p-Si polysilicon emitters. This results in a lower emitter resistance, for example as low as 12Ωμm2 for as-deposited p-Si devices. The base current suppression for as-deposited α-Si devices is explained by fluorine passivation of trapping states at the interface. Analysis of the fluorine SIMS profiles suggests that they do not resemble normal diffusion profiles, but are due to fluorine trapped at defects. It is shown that a reciprocal relationship exists between the fluorine dose in the bulk polysilicon layer and the fluorine dose at the interface. In as-deposited α-Si devices, there is more fluorine trapped at defects in the bulk polysilicon layer, so less is available to diffuse to the interface. As a result there is less interfacial oxide breakup and more passivation in the as-deposited α-Si devices. These

  12. Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

    Energy Technology Data Exchange (ETDEWEB)

    Pinto, S. [University of Minho, Portugal; Roldan Gutierrez, Manuel A [ORNL; Ramos, M. M.D. [University of Minho, Portugal; Gomes, M.J.M. [University of Minho, Portugal; Molina, S. I. [Universidad de Cadiz, Spain; Pennycook, Stephen J [ORNL; Varela del Arco, Maria [ORNL; Buljan, M. [R. Boskovic Institute, Zagreb, Croatia; Barradas, N. [Instituto Tecnologico e Nuclear (ITN), Lisbon, Portugal; Alves, E. [Instituto Tecnologico e Nuclear (ITN), Lisbon, Portugal; Chahboun, A. [FST Tanger, Morocco; Bernstorff, S. [Sincrotrone Trieste, Basovizza, Italy

    2012-01-01

    In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

  13. The Relationship between Nanocluster Precipitation and Thermal Conductivity in Si/Ge Amorphous Multilayer Films: Effects of Cu Addition

    OpenAIRE

    Ahmad Ehsan Mohd Tamidi; Yasushi Sasajima

    2016-01-01

    We have used a molecular dynamics technique to simulate the relationship between nanocluster precipitation and thermal conductivity in Si/Ge amorphous multilayer films, with and without Cu addition. In the study, the Green-Kubo equation was used to calculate thermal conductivity in these materials. Five specimens were prepared: Si/Ge layers, Si/(Ge + Cu) layers, (Si + Cu)/(Ge + Cu) layers, Si/Cu/Ge/Cu layers, and Si/Cu/Ge layers. The number of precipitated nanoclusters in these specimens, whi...

  14. Evaluation of silicon-germanium (SiGe) bipolar technologies for use in an upgraded atlas detector

    International Nuclear Information System (INIS)

    Silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technologies promise several advantages over CMOS for the front-end readout electronics for the ATLAS upgrade. We have evaluated the relative merits of the latest generations of IBM SiGe HBT BiCMOS technologies, the 8WL and 8HP platforms. These 130 nm SiGe technologies show promise to operate at lower power than do CMOS technologies and would provide a viable alternative for the silicon strip detector and liquid argon calorimeter upgrades, provided that the radiation tolerance studies at multiple gamma and neutron irradiation levels, included in this investigation, show them to be sufficiently radiation tolerant.

  15. Paramagnetic defects and amorphous network reconstruction of magnetron sputtered a-SiO2:Ge films

    International Nuclear Information System (INIS)

    We have investigated the paramagnetic defects and the structure of magnetron sputtered amorphous SiO2 films containing 3.8 at. % Ge (a-SiO2:Ge) over the 500-1000 deg. C annealing temperature range using electron paramagnetic resonance (EPR), Fourier-transform infrared (FTIR) absorption, and transmission electron microscopy (TEM). The EPR spectra of as-grown a-SiO2:Ge films reveal three different defects: Si-E' centers with gparallel=2.0019 and gperpendicular=2.0004, Ge≡Si3 dangling bonds with gparallel=2.001 and gperpendicular=2.024, and Si≡Si2O or Si≡SiO2 defects with g=2.004. While the Si-E' and g=2.004 lines are removed by heat treatments at 500 deg. C, the signal from Ge≡Si3 dangling bonds persists up to annealing temperatures of 700 deg. C. The structural changes induced upon annealing on the a-SiO2:Ge films have been studied by monitoring the frequency and linewidth of the asymmetric stretching vibration of the Si-O-Si linkage using FTIR. We find that the rearrangement of the amorphous oxide network occurs primarily within the 500-700 deg. C temperature range and no further significant recovery happens upon annealing at temperatures above 700 deg. C, in line with the EPR results. TEM images reveal the formation of Ge nanocrystals (Ge ncs) with diameters of 2-4 nm already upon heat treatments at 500 deg. C. Moreover, it is shown that the mean size of the Ge ncs increases quite significantly as the temperature of the heat treatments increases. The mean diameter of Ge ncs observed after annealing at temperatures above 600 deg. C is above that expected for Ge ncs with efficient photoluminescence properties. The implications of our experimental results for the understanding of the quenching of the photoluminescence from quantum-confined excitons within Ge ncs are briefly discussed

  16. Modal Contributions to Heat Conduction across Crystalline and Amorphous Si/Ge Interfaces

    Science.gov (United States)

    Gordiz, Kiarash; Henry, Asegun

    Until now, our entire understanding of interfacial heat transfer has been based on the phonon gas model and Landauer formalism. Based on this framework, it is difficult to offer any intuition on heat transfer between two solid materials if one side of the interface is an amorphous structure. Here, using the interface conductance modal analysis (ICMA) method, we investigate the modal contributions to thermal interface conductance (TIC) through crystalline (c) and amorphous (a) Si/Ge interfaces. It is revealed that around 15% of the conductance through the cSi/cGe interface arises from less than 0.1% of the modes of vibration in the structure that exist between 12-13THz and because of their large eigenvectors around the interface are classified as interfacial modes. Correlation maps show that these interfacial modes exhibit strong correlations with all the other modes. The physics behind this strong coupling ability is studied by calculating the mode-level harmonic and anharmonic energy distribution among all the atoms in the system. It is found that these interfacial modes are enabled by the large degree of anharmonicity near the interface, which is higher than the bulk and ultimately allows this small group of modes to couple to other modes of vibration. In addition, unlike the cSi/cGe, correlation maps for aSi/cGe, cSi/aGe, and aSi/aGe interfaces show that the majority of contributions to TIC arise from auto-correlations instead of cross-correlations. The provided analysis sheds light on the nature of localized vibrations at interfaces and can be enlightening for other investigations of localization.

  17. Formation of nano-porous GeOx by de-alloying of an Al–Ge–Mn amorphous alloy

    International Nuclear Information System (INIS)

    The present study shows that nanometer-scale amorphous phase separation occurs by spinodal decomposition of the undercooled liquid in a melt-spun Al60Ge30Mn10 alloy, although there is no atomic pair with positive enthalpy of mixing. By adopting a proper de-alloying process, an interconnected nano-porous germanium oxide with an amorphous structure is successfully synthesized. The present study shows that nano-porous amorphous germanium oxide can be easily obtained by de-alloying of Al-based amorphous alloys with nm-scale composition fluctuation

  18. Heterogeneous nucleation of the amorphous phase and dissolution of nanocrystalline grains in bilayer Al-Ge thin films

    Energy Technology Data Exchange (ETDEWEB)

    Raghavan, G.; Divakar, R.; Sundari, T.; Sundararaman, D.; Tyagi, A.K.; Krishan, K. [Indira Gandhi Center for Atomic Research, Kalpakkam (India)

    1997-12-18

    Solid State Amorphization Reaction (SSAR) was first reported in thin film couples of Au-La by Schwarz et al. Since then, many other systems have been shown to undergo SSAR. Various issues involved in SSAR have been extensively investigated and reviewed. The existence of a large negative heat of mixing, anomalous fast diffusion of one component, the requirement of heterogeneous nucleation sites such as grain boundaries are found to be some of the key features of solid state amorphization. The authors present in this paper evidence of heterogeneous nucleation and growth of the amorphous phase followed by the precipitation of germanium from the amorphous phase in Al-Ge bilayer films.

  19. Atomic mobility in the overheated amorphous GeTe compound for phase change memories

    International Nuclear Information System (INIS)

    Abstractauthoren Phase change memories rest on the ability of some chalcogenide alloys to undergo a fast and reversible transition between the crystalline and amorphous phases upon Joule heating. The fast crystallization is due to a high nucleation rate and a large crystal growth velocity which are actually possible thanks to the fragility of the supercooled liquid that allows for the persistence of a high atomic mobility at high supercooling where the thermodynamical driving force for crystallization is also high. Since crystallization in the devices occurs by rapidly heating the amorphous phase, hysteretic effects might arise with a different diffusion coefficient and viscosity on heating than on cooling. In this work, we have quantified these hysteretic effects in the phase change compound GeTe by means of molecular dynamics simulations. The atomic mobility in the overheated amorphous phase is lower than in supercooled liquid at the same temperature and the viscosity is consequently higher. Still, the simulations of the overheated amorphous phase reveal a breakdown of the Stokes-Einstein relation between the diffusion coefficient and the viscosity, similarly to what we found previously in the supercooled liquid. Evidences are provided that the breakdown is due to the emergence of dynamical heterogeneities at high supercooling. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Atomic mobility in the overheated amorphous GeTe compound for phase change memories

    Energy Technology Data Exchange (ETDEWEB)

    Sosso, G.C. [Dipartimento di Scienza dei Materiali, Universita di Milano-Bicocca, Via R. Cozzi 55, 20125 Milano (Italy); Thomas Young Centre and Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom); London Centre for Nanotechnology, 17-19 Gordon Street, London WC1H 0AH (United Kingdom); Behler, J. [Lehrstuhl fuer Theoretische Chemie, Ruhr-Universitaet Bochum, Universitaetsstrasse 150, 44780 Bochum (Germany); Bernasconi, M. [Dipartimento di Scienza dei Materiali, Universita di Milano-Bicocca, Via R. Cozzi 55, 20125 Milano (Italy)

    2016-02-15

    Abstractauthoren Phase change memories rest on the ability of some chalcogenide alloys to undergo a fast and reversible transition between the crystalline and amorphous phases upon Joule heating. The fast crystallization is due to a high nucleation rate and a large crystal growth velocity which are actually possible thanks to the fragility of the supercooled liquid that allows for the persistence of a high atomic mobility at high supercooling where the thermodynamical driving force for crystallization is also high. Since crystallization in the devices occurs by rapidly heating the amorphous phase, hysteretic effects might arise with a different diffusion coefficient and viscosity on heating than on cooling. In this work, we have quantified these hysteretic effects in the phase change compound GeTe by means of molecular dynamics simulations. The atomic mobility in the overheated amorphous phase is lower than in supercooled liquid at the same temperature and the viscosity is consequently higher. Still, the simulations of the overheated amorphous phase reveal a breakdown of the Stokes-Einstein relation between the diffusion coefficient and the viscosity, similarly to what we found previously in the supercooled liquid. Evidences are provided that the breakdown is due to the emergence of dynamical heterogeneities at high supercooling. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Structural change upon annealing of amorphous GeSbTe grown on Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Bragaglia, V., E-mail: bragaglia@pdi-berlin.de; Jenichen, B.; Giussani, A.; Perumal, K.; Riechert, H.; Calarco, R. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2014-08-07

    The structural change upon annealing of an amorphous GeSbTe (GST) film deposited by molecular beam epitaxy on a Si(111) substrate is studied by means of X-ray diffraction (XRD), X-ray reflectivity (XRR), and atomic force microscopy (AFM). XRD profiles reveal that both metastable cubic and stable hexagonal phases are obtained with a single out-of-plane orientation. XRR study shows a density increase and consequent thickness decrease upon annealing, in accordance with literature. From both, the XRD and the AFM study, it emerges that the crystalline substrate acts as a template for the film, favoring the crystallization of the amorphous GST into the [111] oriented metastable cubic phase, and the latter turns into the [0001] stable hexagonal phase for higher annealing temperature.

  2. Molecular dynamics study of structural and dynamical properties of amorphous Si-Ge alloys

    International Nuclear Information System (INIS)

    Structural and dynamical properties of amorphous silicon-germanium (a-Si1-xGex) alloys have been examined by molecular dynamics simulations using the Tersoff interatomic potential. Amorphous networks were generated by rapid quenching from liquid Si1-xGex alloys. Good agreement was obtained between the simulated and experimentally measured radial distribution functions and phonon densities of states, suggesting that the Tersoff potential is useful for analyzing the atomic configurations and vibrational properties of a-Si1-xGex alloys. Local atomistic structures, such as topological and chemical short-range order states, were also examined in detail, and we compared them with experimental and theoretical results reported previously. On the basis of the results obtained here, we proposed that the bond length and bond angle around Ge atoms have more distortion than those around Si atoms in a-Si1-xGex networks

  3. Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

    Institute of Scientific and Technical Information of China (English)

    Xu Xiao-Bo; Zhang He-Ming; Hu Hui-Yong; Qu Jiang-Tao

    2011-01-01

    An analytical expression for the collector resistance of a novel vertical SiGe heteroj unction bipolar transistor (HBT)on thin film silicon-on-insulator (SOI) is obtained with the substrate bias effects being considered. The resistance is found to decrease slowly and then quickly and to have kinks with the increase of the substrate-collector bias, which is quite different from that of a conventional bulk HBT. The model is consistent with the simulation result and the reported data and is useful to the frequency characteristic design of 0.13 μm millimeter-wave SiGe SOI BiCMOS devices.

  4. Nonlinear vortex transport in mesoscopic channels of amorphous NbGe

    OpenAIRE

    Otto, Florian

    2010-01-01

    Amorphous Nb0.7Ge0.3, a high-kappa type-II superconductor with very low pinning, allows for measurements in the flux-flow regime over large parts of the B-T-phase diagram. When a transport current is driven through a narrow wire (width 250 nm) connected to remote voltage probes via a perpendicular channel (length 2 µm) in presence of an external (out-of-plane) magnetic field, the Transversal Flux Transformer Effect can be used to produce a nonlocal voltage drop on the remote contacts caused ...

  5. The structure and physical properties of amorphous (GeS)1-x Bix thin films

    International Nuclear Information System (INIS)

    The influence of a small addition of Bi on the structure, electrophysical properties, and optical ones of germanium mono sulphide thin films is investigated. Using electro graphic studies, it is shown that (GeS)1-x Bix (0 ≤ x ≤ 0.15) films are amorphous and their structure can be described in the frame of the model, which is usually used for solid GeS-Bi2S3 solutions. Electro resistivity increases when Bi-atoms are added. At the same time, the optical gap width E0 decreases and the reciprocal slope of the exponential region of the absorption edge d(hν)/dInα increases

  6. Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

    Institute of Scientific and Technical Information of China (English)

    Chen Liang; Zhang Wan-Rong; Jin Dong-Yue; Shen Pei; Xie Hong-Yun; Ding Chun-Bao; Xiaa Ying; Sun Bo-Tao; Wang Ren-Qing

    2011-01-01

    method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe hererojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusious.

  7. Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

    International Nuclear Information System (INIS)

    A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusions. (interdisciplinary physics and related areas of science and technology)

  8. Top electrode material related bipolar memory and unipolar threshold resistance switching in amorphous Ta2O5 films

    Science.gov (United States)

    Cai, Yunyu; Sheng, Cuicui; Liang, Changhao

    2013-06-01

    Tantalum oxide (Ta2O5) is one of the most studied materials for its stable resistance switching and potential application in nonvolatile memory devices. Top electrode and essential switching material are two critical points dominating its switching characteristics. Here, Ta2O5 films of amorphous nature (a-Ta2O5) with tunable thicknesses were made by changing the applied voltage during anodic oxidation of Ta-metal foils. The resistance-switching behavior of an a-Ta2O5 film in a metal/a-Ta2O5/Ta configuration was investigated by using a sputtered W or Ag metal film as the top electrode. The unipolar threshold switching phenomenon was observed using W as top electrode (WTE), while bipolar switching behaviors were achieved using active Ag metal as top electrode (AgTE). The thickness of the a-Ta2O5 film shows an obvious effect on the SET voltage in a WTE/a-Ta2O5/Ta device. The interfacial redox reaction induced formation of more conductive Ta-rich suboxide and the Joule heating effect are proposed to contribute to the unipolar threshold switching behavior. It is also suggested that the bipolar switching could have resulted from the electrochemical reaction-induced dissolution and growth of Ag conducting channels inside the Ta2O5 films.

  9. Structural and vibrational properties of amorphous GeO2: a molecular dynamics study

    International Nuclear Information System (INIS)

    We studied the structural and dynamical properties of amorphous germanium oxide (GeO2) by means of the molecular dynamics technique. The simulations were done in the microcanonical ensemble, with a system at a density of 3.7 g cm-3, using a pairwise potential. The resulting neutron static structure factor is compared to experimental results. The network topology of our system is analyzed through partial pair correlations, coordination number and angle distributions. A detailed analysis of the interatomic distances reveals that in the amorphous state there is a short range order dominated by a slightly distorted Ge(O1/2)4 tetrahedron. Beyond that, there is an intermediate range order composed of vertex-sharing tetrahedra. The vibrational properties were characterized by means of the density of states, obtained as a Fourier transform of the velocity autocorrelation function. The vibrational density of states has two bands, a low frequency one related to the inter-tetrahedron vibration and a high frequency band related to the intra-tetrahedron vibration

  10. PLD Preparation of GeS6 Amorphous Film and Investigation on Its Photo-induced Darkening Phenomenon

    Institute of Scientific and Technical Information of China (English)

    LIU Gang; GU Shaoxuan; ZHANG Haochun; ZHANG Ning; TAO Haizheng

    2014-01-01

    GeS6 chalcogenide amorphous film was deposited on glass substrate via PLD (pulsed laser deposition) technique. The performance and structure of the film was characterized by XRD (X-ray diffraction), SEM (Scanning Electron Microscopy), EDS (Energy Dispersive Spectroscopy), optical transmission spectra, and Raman spectra, etc. The GeS6 amorphous film was irradiated by 532 nm linearly polarized light, and its photo-induced darkening was investigated. The results showed that the GeS6 chalcogenide amorphous film was smooth and compact with uniform thickness and combined with the substrate firmly, and its chemical composition was in consistency with the bulky target. When laser energy was fixed, the transparence of the film declined with the increase of the laser irradiation time. Obvious photo-induced darkening and relaxation phenomenon of the film after laser irradiation were observed in this investigation.

  11. Amorphous GeOx-Coated Reduced Graphene Oxide Balls with Sandwich Structure for Long-Life Lithium-Ion Batteries.

    Science.gov (United States)

    Choi, Seung Ho; Jung, Kyeong Youl; Kang, Yun Chan

    2015-07-01

    Amorphous GeOx-coated reduced graphene oxide (rGO) balls with sandwich structure are prepared via a spray-pyrolysis process using polystyrene (PS) nanobeads as sacrificial templates. This sandwich structure is formed by uniformly coating the exterior and interior of few-layer rGO with amorphous GeOx layers. X-ray photoelectron spectroscopy analysis reveals a Ge:O stoichiometry ratio of 1:1.7. The amorphous GeOx-coated rGO balls with sandwich structure have low charge-transfer resistance and fast Li(+)-ion diffusion rate. For example, at a current density of 2 A g(-1), the GeOx-coated rGO balls with sandwich and filled structures and the commercial GeO2 powders exhibit initial charge capacities of 795, 651, and 634 mA h g(-1), respectively; the corresponding 700th-cycle charge capacities are 758, 579, and 361 mA h g(-1). In addition, at a current density of 5 A g(-1), the rGO balls with sandwich structure have a 1600th-cycle reversible charge capacity of 629 mA h g(-1) and a corresponding capacity retention of 90.7%, as measured from the maximum reversible capacity at the 100th cycle. PMID:26047208

  12. The Relationship between Nanocluster Precipitation and Thermal Conductivity in Si/Ge Amorphous Multilayer Films: Effects of Cu Addition

    Directory of Open Access Journals (Sweden)

    Ahmad Ehsan Mohd Tamidi

    2016-01-01

    Full Text Available We have used a molecular dynamics technique to simulate the relationship between nanocluster precipitation and thermal conductivity in Si/Ge amorphous multilayer films, with and without Cu addition. In the study, the Green-Kubo equation was used to calculate thermal conductivity in these materials. Five specimens were prepared: Si/Ge layers, Si/(Ge + Cu layers, (Si + Cu/(Ge + Cu layers, Si/Cu/Ge/Cu layers, and Si/Cu/Ge layers. The number of precipitated nanoclusters in these specimens, which is defined as the number of four-coordinate atoms, was counted along the lateral direction of the specimens. The observed results of precipitate formation were considered in relation to the thermal conductivity results. Enhancement of precipitation of nanoclusters by Cu addition, that is, densification of four-coordinate atoms, can prevent the increment of thermal conductivity. Cu dopant increases the thermal conductivity of these materials. Combining these two points, we concluded that Si/Cu/Ge is the best structure to improve the conversion efficiency of the Si/Ge amorphous multilayer films.

  13. Chronological change of electrical resistance in GeCu2Te3 amorphous film induced by surface oxidation

    International Nuclear Information System (INIS)

    Unusual chronological electrical resistance change behavior was investigated for amorphous GeCu2Te3 phase change material. More than a 1 order decrease of electrical resistance was observed in the air even at room temperature. The resistance of the amorphous film gradually increased with increasing temperature and then showed a drop upon crystallization. Such unusual behavior was attributed to the oxidation of the amorphous GeCu2Te3 film. From the compositional depth profile measurement, the GeCu2Te3 film without any capping layer was oxidized in air at room temperature and the formed oxide was mainly composed of germanium oxide. Consequently, a highly-conductive Cu-rich layer was formed in the vicinity of the surface of the film, which reduced the total resistance of the film. The present results could provide insight into the chronological change of electrical resistance in amorphous chalcogenide materials, indicating that not only relaxation of the amorphous, but also a large atomic diffusion contributes to the chronological resistance change. (paper)

  14. History dependent vortex configurations in superconducting disks of amorphous MoGe

    International Nuclear Information System (INIS)

    We have investigated spatial configurations of vortices in superconducting disks of amorphous MoGe as a function of field history. Employing a scanning SQUID microscope technique, we observe quasi-symmetric distributions of the vortices imposed by the disk geometry. For a field cool measurement, a single vortex state appears after the Meissner state and it is followed by multi-vortex states at higher fields. In a zero field cool (ZFC) measurement, however, different behaviors are observed. On increasing magnetic field, the Meissner state switches directly to the multi-vortex state without showing the single vortex state. The corresponding magnetization curves of the disks are strikingly history dependent. These results indicate that the ZFC procedure results in an unusual penetration of the vortices in the small superconducting disks.

  15. Photosensitivity of pulsed laser deposited Ge20As20Se60 and Ge10As30Se60 amorphous thin films

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • Amorphous Ge20As20Se60/Ge10As30Se60 films are fabricated by pulsed laser deposition. • Photosensitivity of the layers is studied by employing spectroscopic ellipsometry. • As-deposited/relaxed thin films were irradiated by 593, 635, and 660 nm lasers. • Ge20As20Se60 layers present almost zero photorefraction in relaxed state. - Abstract: Amorphous Ge20As20Se60 and Ge10As30Se60 thin films are fabricated by pulsed laser deposition. Prepared films are characterized in terms of their morphology, chemical composition, and optical properties. Special attention is given to the photosensitivity of the layers, which was studied by spectroscopic ellipsometry with as-deposited, annealed and exposed films by three different laser sources (593, 635, and 660 nm). The results show better photostability for Ge20As20Se60 thin films, where photoinduced change of optical band gap was found to be equal or less than 0.04 eV and these layers present almost zero photorefraction

  16. First-principles study of crystalline and amorphous Ge2Sb2Te5 and the effects of stoichiometric defects

    International Nuclear Information System (INIS)

    Based on ab initio molecular dynamics simulations, we investigated the structural, electronic and vibrational properties of cubic and amorphous Ge2Sb2Te5 (GST) phase change material, focusing in particular on the effects of defects in stoichiometry on the electronic properties. It turned out Ge/Sb deficiencies (excess) in the cubic phase induce a shift of the Fermi level inside the valence (conduction) bands. In contrast, the amorphous network is flexible enough to accommodate defects in stoichiometry, keeping the Fermi level pinned at the center of the bandgap (at zero temperature). Changes in the structural and electronic properties induced by the use of hybrid functionals (HSE03, PBE0) instead of gradient corrected functionals (PBE) are addressed as well. Analysis of vibrational spectra and Debye-Waller factors of cubic and amorphous GST is also presented.

  17. A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects

    Institute of Scientific and Technical Information of China (English)

    Xu Xiao-Bo; Xu Kai-Xuan; Zhang He-Ming; Qin Shan-Shan

    2011-01-01

    In this paper,we describe the saturation effect of a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) fabricated on a thin silicon-on-insulator (SOI) with a step-by-step derivation of the model formulation. The collector injection width,the internal base-collector bias,and the hole density at the base-collector junction interface are analysed by considering the unique features of the internal and the external parts of the collector,.they are different from those of a bulk counterpart.

  18. Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

    Institute of Scientific and Technical Information of China (English)

    Xu Xiao-Bo; Zhang He-Ming; Hu Hui-Yong; Li Yu-Chen; Qu Jiang-Tao

    2011-01-01

    In this paper,we propose an analytical avalanche multiplication model for the next generation of SiGe siliconon-insulator (SOI) heterojunction bipolar transistors (HBTs) and consider their vertical and lateral impact ionizations for the first time.Supported by experimental data,the analytical model predicts that the avalanche multiplication governed by impact ionization shows kinks and the impact ionization effect is small compared with that of the bulk HBT,resulting in a larger base-collector breakdown voltage.The model presented in the paper is significant and has useful applications in the design and simulation of the next generation of SiGe SOI BiCMOS technology.

  19. An Analytical Avalanche Multiplication Model for Partially Depleted Silicon-on-Insulator SiGe Heterojunction Bipolar Transistors

    Institute of Scientific and Technical Information of China (English)

    XU Xiao-Bo; ZHANG He-Ming

    2011-01-01

    An analytical expression for avalanche multiplication of a novel vertical SiGe partially depleted heterojunction bipolar transistor (HBT) on a thin silicon-on-insulator (SOI) layer is obtained,considering vertical and horizontal impact ionization effects.The avalanche multiplication is found to be dependent on the collector width and doping concentration,and shows kinks with the increase of reverse base-collector bias,which is quite different from that of a conventional bulk HBT.The model is consistent with the experimental and simulation data and is found to be significant for the design and simulation of 0.13μm millimeter wave SiGe SOI BiCMOS technology.

  20. Enhanced Low Dose Rate Sensitivity (ELDRS) tests on advanced SiGe bipolar transistors for very high total dose applications

    International Nuclear Information System (INIS)

    A new comprehensive method for assessing Enhanced Low Dose Rate Sensitivity (ELDRS) in bipolar transistors to be used for very high total doses is applied to an advanced SiGe HBT technology for its use in the ATLAS Upgrade at CERN. Conventional ELDRS assessment methods are combined with switched experiments (high/low dose rate), providing a way to verify the presence of ELDRS at very high doses in reasonable irradiation time. Additionally, an anomalous damage recovery has been found in transistors with saturated damage after further low dose rate irradiations. -- Highlights: • It has been demonstrated that the bipolar technology under study does not show ELDRS in the whole range of total doses studied. • The previous radiation hardness tests of a SiGe HBT technology have been validated. • A new ELDRS test strategy is presented for ELDRS in very high total dose applications. • An anomalous damage recovery has been observed in switched dose rate experiments in the saturation region

  1. Pressure induced amorphization and collapse of magnetic order in type-I clathrate Eu8Ga16Ge30

    OpenAIRE

    Mardegan, J. R. L.; Fabbris, G.; Veiga, L. S. I.; Adriano, C.; M.A. Avila; Haskel, D.; Giles, C.

    2013-01-01

    We investigate the low temperature structural and electronic properties of the type-I clathrate Eu8Ga16Ge30 under pressure using x-ray powder diffraction (XRD), x-ray absorption near-edge structure (XANES) and x-ray magnetic circular dichroism (XMCD) techniques. The XRD measurements reveal a transition to an amorphous phase above 18 GPa. Unlike previous reports on other clathrate compounds, no volume-collapse is observed prior to the crystalline-amorphous phase transition which takes place wh...

  2. Optical properties of silver doped amorphous films of composition Ge28S72 and Ge22Ga6S72

    Czech Academy of Sciences Publication Activity Database

    Bartoš, M.; Wágner, T.; Válková, S.; Pavlišta, M.; Vlček, Milan; Beneš, L.; Frumar, M.

    Bucharest: National Institute R&D of Materials Physics, 77125-Bucharest, Magurele, P.O. Box Mg. 7, Bucharest, Romania, 2011. s. 38. [Fifth International Conference on Amorphous and Nanostructured Chalcogenides. 26.06.2011-01.07.2011, Magurele - Bucharest] Institutional research plan: CEZ:AV0Z40500505 Keywords : amorphous films * chalcogenides * optical properties Subject RIV: CA - Inorganic Chemistry

  3. Chemical mechanical planarization of amorphous Ge2Sb2Te5 with a soft pad

    International Nuclear Information System (INIS)

    Chemical mechanical planarization (CMP) of amorphous Ge2Sb2Te5 (a-GST) is investigated using two typical soft pads (politex REG and AT) in acidic slurry. After CMP, it is found that the removal rate (RR) of a-GST increases with an increase of runs number for both pads. However, it achieves the higher RR and better surface quality of a-GST for an AT pad. The in-situ sheet resistance (Rs) measure shows the higher Rs of a-GST polishing can be gained after CMP using both pads and the high Rs is beneficial to lower the reset current for the PCM cells. In order to find the root cause of the different RR of a-GST polishing with different pads, the surface morphology and characteristics of both new and used pads are analyzed, it shows that the AT pad has smaller porosity size and more pore counts than that of the REG pad, and thus the AT pad can transport more fresh slurry to the reaction interface between the pad and a-GST, which results in the high RR of a-GST due to enhanced chemical reaction. (semiconductor technology)

  4. Chemical mechanical planarization of amorphous Ge2Sb2Te5 with a soft pad

    Science.gov (United States)

    Aodong, He; Bo, Liu; Zhitang, Song; Yegang, Lü; Juntao, Li; Weili, Liu; Songlin, Feng; Guanping, Wu

    2013-07-01

    Chemical mechanical planarization (CMP) of amorphous Ge2Sb2Te5 (a-GST) is investigated using two typical soft pads (politex REG and AT) in acidic slurry. After CMP, it is found that the removal rate (RR) of a-GST increases with an increase of runs number for both pads. However, it achieves the higher RR and better surface quality of a-GST for an AT pad. The in-situ sheet resistance (Rs) measure shows the higher Rs of a-GST polishing can be gained after CMP using both pads and the high Rs is beneficial to lower the reset current for the PCM cells. In order to find the root cause of the different RR of a-GST polishing with different pads, the surface morphology and characteristics of both new and used pads are analyzed, it shows that the AT pad has smaller porosity size and more pore counts than that of the REG pad, and thus the AT pad can transport more fresh slurry to the reaction interface between the pad and a-GST, which results in the high RR of a-GST due to enhanced chemical reaction.

  5. Work function contrast and energy band modulation between amorphous and crystalline Ge2Sb2Te5 films

    Science.gov (United States)

    Tong, H.; Yang, Z.; Yu, N. N.; Zhou, L. J.; Miao, X. S.

    2015-08-01

    The work function (WF) is of crucial importance to dominate the carrier transport properties of the Ge-Sb-Te based interfaces. In this letter, the electrostatic force microscopy is proposed to extract the WF of Ge2Sb2Te5 (GST) films with high spatial and energy resolution. The measured WF of as-deposited amorphous GST is 5.34 eV and decreases drastically after the amorphous GST is crystallized by annealing or laser illumination. A 512 × 512 array 2D-WF map is designed to study the WF spatial distribution and shows a good consistency. The WF contrast between a-GST and c-GST is ascribed to band modulation, especially the modification of electron affinity including the contribution of charges or dipoles. Then, the band alignments of GST/n-Si heterostructures are obtained based on the Anderson's rule. Due to the band modulation, the I-V characteristics of a-GST/Si heterojunction and c-GST/Si heterojunction are very different from each other. The quantitative relationship is calculated by solving the Poisson's equation, which agrees well with the I-V measurements. Our findings not only suggest a way to further understand the electrical transport properties of Ge-Sb-Te based interfaces but also provide a non-touch method to distinguish crystalline area from amorphous matrix with high spatial resolution.

  6. Work function contrast and energy band modulation between amorphous and crystalline Ge2Sb2Te5 films

    International Nuclear Information System (INIS)

    The work function (WF) is of crucial importance to dominate the carrier transport properties of the Ge-Sb-Te based interfaces. In this letter, the electrostatic force microscopy is proposed to extract the WF of Ge2Sb2Te5 (GST) films with high spatial and energy resolution. The measured WF of as-deposited amorphous GST is 5.34 eV and decreases drastically after the amorphous GST is crystallized by annealing or laser illumination. A 512 × 512 array 2D-WF map is designed to study the WF spatial distribution and shows a good consistency. The WF contrast between a-GST and c-GST is ascribed to band modulation, especially the modification of electron affinity including the contribution of charges or dipoles. Then, the band alignments of GST/n-Si heterostructures are obtained based on the Anderson's rule. Due to the band modulation, the I-V characteristics of a-GST/Si heterojunction and c-GST/Si heterojunction are very different from each other. The quantitative relationship is calculated by solving the Poisson's equation, which agrees well with the I-V measurements. Our findings not only suggest a way to further understand the electrical transport properties of Ge-Sb-Te based interfaces but also provide a non-touch method to distinguish crystalline area from amorphous matrix with high spatial resolution

  7. Effect of Si interface surface roughness to the tunneling current of the Si/Si{sub 1-x}Ge{sub x}/Si heterojunction bipolar transistor

    Energy Technology Data Exchange (ETDEWEB)

    Hasanah, Lilik, E-mail: lilikhasanah@upi.edu; Suhendi, Endi; Tayubi, Yuyu Rahmat; Yuwono, Heru [Department of Physics Education, Universitas Pendidikan Indonesia, Jl. Setiabudhi 229 Bandung 40154 (Indonesia); Nandiyanto, Asep Bayu Dani [Department Kimia, Universitas Pendidikan Indonesia, Jl. Setiabudhi 229 Bandung 40154 (Indonesia); Murakami, Hideki [Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8527 (Japan); Khairrurijal [Physics of Electronic Materials Research Division, Institut Teknologi Bandung, Bandung 40132 (Indonesia)

    2016-02-08

    In this work we discuss the surface roughness of Si interface impact to the tunneling current of the Si/Si{sub 1-x}Ge{sub x}/Si heterojunction bipolar transistor. The Si interface surface roughness can be analyzed from electrical characteristics through the transversal electron velocity obtained as fitting parameter factor. The results showed that surface roughness increase as Ge content of virtual substrate increase This model can be used to investigate the effect of Ge content of the virtual substrate to the interface surface condition through current-voltage characteristic.

  8. Understanding atomic structures of amorphous C-doped Ge2Sb2Te5 phase-change memory materials

    International Nuclear Information System (INIS)

    The atomic structure of thin films of the carbon-doped Ge2Sb2Te5 (GST) rapid phase-change memory material Ge2Sb2Te5C (10% C-GST) was investigated by reverse Monte Carlo refinement using experimental electron diffraction reduced scattering data accompanied by density functional theory (DFT) molecular dynamics (MD) simulations and energy optimizations. For comparison, the structure of amorphous Ge2Sb2Te5C2 (18% C-GST) was obtained by DFT MD simulation of cooling from the melt. The results suggest that the carbon dopant forms atomic scale carbon clusters coordinated predominantly by Ge atoms. This becomes more evident with increasing carbon concentration. For 10% C-GST the building blocks of the matrix can be identified as squares of Ge(Sb)-Te-Sb(Ge)-Te atoms, related to the elementary building blocks of the corresponding crystalline structure of the metastable cubic phase of pure GST. The increased contribution of homopolar Te-Te bonds and Sb(Te)-Te-Sb(Te)-Te square fragments is suggested with the higher dopant level in 18% C-GST.

  9. Hard x-ray photoelectron spectroscopy study of Ge2Sb2Te5; as-deposited amorphous, crystalline, and laser-reamorphized

    International Nuclear Information System (INIS)

    We have investigated the electronic structure of as-deposited, crystalline, and laser-reamorphized Ge2Sb2Te5 using high resolution, hard x-ray photoemission spectroscopy. A shift in the Fermi level as well as a broadening of the spectral features in the valence band and the Ge 3d level between the amorphous and crystalline state is observed. Upon amorphization, Ge 3d and Sb 4d spectra show a surprisingly small breaking of resonant bonds and changes in the bonding character as evidenced by the very similar density of states in all cases

  10. Mesoscale computational study of the nanocrystallization of amorphous Ge via a self-consistent atomistic phase-field model

    International Nuclear Information System (INIS)

    Germanium is the base element in many phase-change materials, i.e. systems that can undergo reversible transformations between their crystalline and amorphous phases. These materials are widely used in current digital electronics and hold great promise for the next generation of non-volatile memory devices. However, the ultra-fast phase transformations required for these applications can be exceedingly complex even for single-component systems, and a full physical understanding of these phenomena is still lacking. In this paper we study the growth of crystalline Ge from amorphous thin films at high temperature using phase-field models informed by atomistic calculations of fundamental material properties. The atomistic calculations capture the full anisotropy of the Ge crystal lattice, which results in orientation dependences for interfacial energies and mobilities. These orientation relations are then exactly recovered by the phase-field model at finite thickness via a novel parametrization strategy based on invariance solutions of the Allen–Cahn equations. By means of this multiscale approach, we study the interplay between nucleation and growth and find that the relation between the mean radius of the crystallized Ge grains and the nucleation rate follows simple Avrami-type scaling laws. We argue that these can be used to cover a wide region of the nucleation rate space, hence facilitating comparison with experiments

  11. The thickness dependence of the crystallization behavior in sandwiched amorphous Ge2Sb2Te5 thin films

    Science.gov (United States)

    Bai, G.; Li, R.; Xu, H. N.; Xia, Y. D.; Liu, Z. G.; Lu, H. M.; Yin, J.

    2011-12-01

    The thickness dependent crystallization behavior of thin amorphous Ge2Sb2Te5(GST) films sandwiched between different cladding materials has been investigated based on a thermodynamic model. It is revealed that there is a critical thickness below which the crystallization cannot occur. The critical thickness is determined by the energy difference Δγ between the crystalline GST/substrate interface energy and the amorphous GST/substrate interface energy, the melting enthalpy, and the mole volume. The calculated result is in good agreement with the experiments. Furthermore, the crystallization temperature is also affected by interface energy difference Δγ. Larger Δγ gives rise to a higher crystallization temperature, and vice versa. This impact becomes stronger as the film thickness is decreased.

  12. Kinetics of liquid-mediated crystallization of amorphous Ge from multi-frame dynamic transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Santala, M. K., E-mail: melissa.santala@oregonstate.edu; Campbell, G. H. [Materials Science Division, Lawrence Livermore National Laboratory, 7000 East Ave., Livermore, California 94551 (United States); Raoux, S. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany)

    2015-12-21

    The kinetics of laser-induced, liquid-mediated crystallization of amorphous Ge thin films were studied using multi-frame dynamic transmission electron microscopy (DTEM), a nanosecond-scale photo-emission transmission electron microscopy technique. In these experiments, high temperature gradients are established in thin amorphous Ge films with a 12-ns laser pulse with a Gaussian spatial profile. The hottest region at the center of the laser spot crystallizes in ∼100 ns and becomes nano-crystalline. Over the next several hundred nanoseconds crystallization continues radially outward from the nano-crystalline region forming elongated grains, some many microns long. The growth rate during the formation of these radial grains is measured with time-resolved imaging experiments. Crystal growth rates exceed 10 m/s, which are consistent with crystallization mediated by a very thin, undercooled transient liquid layer, rather than a purely solid-state transformation mechanism. The kinetics of this growth mode have been studied in detail under steady-state conditions, but here we provide a detailed study of liquid-mediated growth in high temperature gradients. Unexpectedly, the propagation rate of the crystallization front was observed to remain constant during this growth mode even when passing through large local temperature gradients, in stark contrast to other similar studies that suggested the growth rate changed dramatically. The high throughput of multi-frame DTEM provides gives a more complete picture of the role of temperature and temperature gradient on laser crystallization than previous DTEM experiments.

  13. Kinetics of liquid-mediated crystallization of amorphous Ge from multi-frame dynamic transmission electron microscopy

    International Nuclear Information System (INIS)

    The kinetics of laser-induced, liquid-mediated crystallization of amorphous Ge thin films were studied using multi-frame dynamic transmission electron microscopy (DTEM), a nanosecond-scale photo-emission transmission electron microscopy technique. In these experiments, high temperature gradients are established in thin amorphous Ge films with a 12-ns laser pulse with a Gaussian spatial profile. The hottest region at the center of the laser spot crystallizes in ∼100 ns and becomes nano-crystalline. Over the next several hundred nanoseconds crystallization continues radially outward from the nano-crystalline region forming elongated grains, some many microns long. The growth rate during the formation of these radial grains is measured with time-resolved imaging experiments. Crystal growth rates exceed 10 m/s, which are consistent with crystallization mediated by a very thin, undercooled transient liquid layer, rather than a purely solid-state transformation mechanism. The kinetics of this growth mode have been studied in detail under steady-state conditions, but here we provide a detailed study of liquid-mediated growth in high temperature gradients. Unexpectedly, the propagation rate of the crystallization front was observed to remain constant during this growth mode even when passing through large local temperature gradients, in stark contrast to other similar studies that suggested the growth rate changed dramatically. The high throughput of multi-frame DTEM provides gives a more complete picture of the role of temperature and temperature gradient on laser crystallization than previous DTEM experiments

  14. Ultrafast optical response of the amorphous and crystalline states of the phase change material Ge2Sb2Te5

    Science.gov (United States)

    Miller, T. A.; Rudé, M.; Pruneri, V.; Wall, S.

    2016-07-01

    We examine the ultrafast optical response of the crystalline and amorphous phases of the phase change material Ge2Sb2Te5 (GST) below the phase transformation threshold. Simultaneous measurement of the transmissivity and reflectivity of thin film samples yields the time-dependent evolution of the dielectric function for both phases. We then identify how lattice motion and electronic excitation manifest in the dielectric response. The dielectric response of both phases is large but markedly different. At 800 nm, the changes in amorphous GST are well described by the Drude response of the generated photocarriers, whereas the crystalline phase is better described by the depopulation of resonant bonds. We find that the generated coherent phonons have a greater influence in the amorphous phase than the crystalline phase. Furthermore, coherent phonons do not influence resonant bonding. For fluences up to 50% of the transformation threshold, the structure does not exhibit bond softening in either phase, enabling large changes of the optical properties without structural modification.

  15. Amorphous silicon germanium carbide photo sensitive bipolar junction transistor with a base-contact and a continuous tunable high current gain

    Energy Technology Data Exchange (ETDEWEB)

    Bablich, A., E-mail: andreas.bablich@uni-siegen.de [Department of Electrical and Computer Engineering, Institute for Microsystem Technologies, University of Siegen, Hoelderlinstrasse 3, 57076 Siegen (Germany); Merfort, C., E-mail: merfort@imt.e-technik.uni-siegen.de [Department of Electrical and Computer Engineering, Institute for Microsystem Technologies, University of Siegen, Hoelderlinstrasse 3, 57076 Siegen (Germany); Eliasz, J., E-mail: jacek.eliasz@student.uni-siegen.de [Department of Electrical and Computer Engineering, Institute for Microsystem Technologies, University of Siegen, Hoelderlinstrasse 3, 57076 Siegen (Germany); Schäfer-Eberwein, H., E-mail: heiko.schaefer@uni-siegen.de [Department of Electrical and Computer Engineering, Institute of High Frequency and Quantum Electronics, University of Siegen, Hoelderlinstrasse 3, 57076 Siegen (Germany); Haring-Bolivar, P., E-mail: peter.haring@uni-siegen.de [Department of Electrical and Computer Engineering, Institute of High Frequency and Quantum Electronics, University of Siegen, Hoelderlinstrasse 3, 57076 Siegen (Germany); Boehm, M., E-mail: markus.boehm@uni-siegen.de [Department of Electrical and Computer Engineering, Institute for Microsystem Technologies, University of Siegen, Hoelderlinstrasse 3, 57076 Siegen (Germany)

    2014-05-02

    In this paper, the design, fabrication and characterization of an amorphous silicon germanium carbide (a-SiGeC:H) photo sensitive bipolar junction transistor (PS-BJT) with three terminals are presented. Whereas the current gain of similar transistor devices presented in the past (Wu et al., 1984; Hwang et al., 1993; Nascetti and Caputo, 2002; Chang et al., 1985a,b; Wu et al, 1985; Hong et al., 1990) can only be controlled with photo induced charge generation, the n–i–δp–i–n structure developed features a contacted base to provide the opportunity to adjust the current gain optically and electrically, too. Electron microscope-, current-/voltage- and spectral measurements were performed to study the PS-BJT behavior and calculate the electrical and optical current gain. The spectral response maximum of the base–collector diode has a value of 170 mA/W applying a base–collector voltage of − 1 V and is located at 620 nm. The base–emitter diode reaches a sensitivity of 25.7 mA/W at 530 nm with a base-emitter voltage of − 3 V. The good a-Si:H transport properties are validated in a μτ-product of 4.6 × 10{sup −6} cm{sup 2} V s, which is sufficient to reach a continuous base- and photo-tunable current gain of up to − 126 at a base current of I{sub B} = + 10 nA and a collector–emitter voltage of V{sub CE} = − 3 V. The transistor obtains a maximum collector current of − 65.5 μA (V{sub CE} = − 3 V) and + 56.2 μA (V{sub CE} = + 3 V) at 10,000 lx 5300 K white-light illumination. At 3300 lx, the electrical current gain reaches a value of + 100 (V{sub CE} = + 2 V) at I{sub B} = 10 nA. With a negative base current of I{sub B} = − 10 nA the electrical gain can be adjusted between 87 (V{sub CE} = + 2 V) and − 106 (V{sub CE} = -3 V), respectively. When no base charge is applied, the transistor is “off” for V{sub CE} > − 3 V. Reducing the base current increases the electrical current gain. Operating with a voltage V{sub CE} of just ± 2 V

  16. Amorphous silicon germanium carbide photo sensitive bipolar junction transistor with a base-contact and a continuous tunable high current gain

    International Nuclear Information System (INIS)

    In this paper, the design, fabrication and characterization of an amorphous silicon germanium carbide (a-SiGeC:H) photo sensitive bipolar junction transistor (PS-BJT) with three terminals are presented. Whereas the current gain of similar transistor devices presented in the past (Wu et al., 1984; Hwang et al., 1993; Nascetti and Caputo, 2002; Chang et al., 1985a,b; Wu et al, 1985; Hong et al., 1990) can only be controlled with photo induced charge generation, the n–i–δp–i–n structure developed features a contacted base to provide the opportunity to adjust the current gain optically and electrically, too. Electron microscope-, current-/voltage- and spectral measurements were performed to study the PS-BJT behavior and calculate the electrical and optical current gain. The spectral response maximum of the base–collector diode has a value of 170 mA/W applying a base–collector voltage of − 1 V and is located at 620 nm. The base–emitter diode reaches a sensitivity of 25.7 mA/W at 530 nm with a base-emitter voltage of − 3 V. The good a-Si:H transport properties are validated in a μτ-product of 4.6 × 10−6 cm2 V s, which is sufficient to reach a continuous base- and photo-tunable current gain of up to − 126 at a base current of IB = + 10 nA and a collector–emitter voltage of VCE = − 3 V. The transistor obtains a maximum collector current of − 65.5 μA (VCE = − 3 V) and + 56.2 μA (VCE = + 3 V) at 10,000 lx 5300 K white-light illumination. At 3300 lx, the electrical current gain reaches a value of + 100 (VCE = + 2 V) at IB = 10 nA. With a negative base current of IB = − 10 nA the electrical gain can be adjusted between 87 (VCE = + 2 V) and − 106 (VCE = -3 V), respectively. When no base charge is applied, the transistor is “off” for VCE > − 3 V. Reducing the base current increases the electrical current gain. Operating with a voltage VCE of just ± 2 V, the device presented in this paper obtains no optical gain with an incident

  17. Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    We describe a reliable technique to separate the different contributions to the apparent base resistance (RB = RBx + X RBi) of silicon germanium carbon (SiGe:C) heterojunction bipolar transistors (HBTs). The extrinsic base resistance (RBx) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (RBi) are extracted from high frequency noise (MWN) measurements. This method is applied to five different SiGe:C HBTs varying in base doping level and germanium content. The results show that high doping levels improve high frequency noise performances while germanium gradient helps to maintain outstanding dynamic performances. This method could be used to elucidate the base technological configuration that ensures low noise together with remarkable dynamic performances in state-of-the-art SiGe:C HBTs. (paper)

  18. Analytical base-collector depletion capacitance in vertical SiGe heterojunction bipolar transistors fabricated on CMOS-compatible silicon on insulator

    Institute of Scientific and Technical Information of China (English)

    Xu Xiao-Bo; Zhang He-Ming; Hu Hui-Yong; Ma Jian-Li; Xu Li-Jun

    2011-01-01

    The base-collector depletion capacitance for vertical SiGe npn heterojunction bipolar transistors (HBTs) on silicon on insulator (SOI) is split into vertical and lateral parts. This paper proposes a novel analytical depletion capacitance model of this structure for the first time. A large discrepancy is predicted when the present model is compared with the conventional depletion model, and it is shown that the capacitance decreases with the increase of the reverse collectorbase bias-and shows a kink as the reverse collector-base bias reaches the effective vertical punch-through voltage while the voltage differs with the collector doping concentrations, which is consistent with measurement results. The model can be employed for a fast evaluation of the depletion capacitance of an SOI SiGe HBT and has useful applications on the design and simulation of high performance SiGe circuits and devices.

  19. Mode locking features of driven vortex matter in an amorphous MoGe film detected by rf impedance technique

    International Nuclear Information System (INIS)

    We have investigated mode locking resonance of a driven vortex lattice in an amorphous MoGe film by means of rf impedance measurements. This technique allows us to detect directly the lattice motion in response to a rf current superimposed on top of a dc current. At low rf currents the resonance appears as jumps (dips) in real (imaginary) part of rf impedance Z. On increasing rf current, the jump height in the real part of Z at a given resonant condition decreases monotonically, whereas the imaginary part of Z exhibits a transformation from the dip to peak behaviors. Namely, the resonant feature changes from capacitive to inductive responses, on increasing rf current. This behavior implies variations in the phase of rf current relative to that of the lattice velocity modulated by the pinning potential.

  20. Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications

    International Nuclear Information System (INIS)

    Amorphous and smooth GeTe thin films are deposited on 200 mm silicon substrates by plasma enhanced—metal organic chemical vapor deposition (PE–MOCVD) using the commercial organometallic precursors TDMAGe and DIPTe as Ge and Te precursors, respectively. X-ray photoelectron spectroscopy (XPS) measurements show a stoichiometric composition of the deposited GeTe films but with high carbon contamination. Using information collected by Optical Emission Spectroscopy (OES) and XPS, the origin of carbon contamination is determined and the dissociation mechanisms of Ge and Te precursors in H2 + Ar plasma are proposed. As a result, carbon level is properly controlled by varying operating parameters such as plasma radio frequency power, pressure and H2 rate. Finally, GeTe films with carbon level as low as 5 at. % are obtained. (paper)

  1. Control of carbon content in amorphous GeTe films deposited by plasma enhanced chemical vapor deposition (PE-MOCVD) for phase-change random access memory applications

    Science.gov (United States)

    Aoukar, M.; Szkutnik, P. D.; Jourde, D.; Pelissier, B.; Michallon, P.; Noé, P.; Vallée, C.

    2015-07-01

    Amorphous and smooth GeTe thin films are deposited on 200 mm silicon substrates by plasma enhanced—metal organic chemical vapor deposition (PE-MOCVD) using the commercial organometallic precursors TDMAGe and DIPTe as Ge and Te precursors, respectively. X-ray photoelectron spectroscopy (XPS) measurements show a stoichiometric composition of the deposited GeTe films but with high carbon contamination. Using information collected by Optical Emission Spectroscopy (OES) and XPS, the origin of carbon contamination is determined and the dissociation mechanisms of Ge and Te precursors in H2 + Ar plasma are proposed. As a result, carbon level is properly controlled by varying operating parameters such as plasma radio frequency power, pressure and H2 rate. Finally, GeTe films with carbon level as low as 5 at. % are obtained.

  2. Structure of and phase transformations in bulk amorphous (GaSb) sub 1 sub - sub x (Ge sub 2) sub x

    CERN Document Server

    Sapelkin, A V

    1997-01-01

    temperatures, under high pressures and at ambient conditions. Combined EXAFS and powder diffraction methods have been used to study the high pressure behavior of materials. The results revealed a complex picture of structural transformations in (GaSb) sub 1 sub - sub x (Ge sub 2) sub x owing to the meta-stable nature of samples. The semiconductor-to-metal transition observed previously is found to be due to percolation through the high pressure metallic phase GaSb II. It is showed that the combination of two structural techniques, powder diffraction and EXAFS, can provide quite detailed information on the structural behavior of amorphous materials under high pressures. The temperature-dependent EXAFS studies showed that semiconducting amorphous GaSb is likely to be chemically ordered. Issues concerning determination of the structure of amorphous materials and information theory are widely discussed. Amorphous materials are not new to scientists and mankind -- man has been using glass and glassy materials for ...

  3. Ultrafast crystalline-to-amorphous phase transition in Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide alloy thin film using single-shot imaging spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Takeda, Jun, E-mail: jun@ynu.ac.jp; Oba, Wataru; Minami, Yasuo; Katayama, Ikufumi [Department of Physics, Graduate School of Engineering, Yokohama National University, Yokohama 240-8501 (Japan); Saiki, Toshiharu [Graduate School of Science and Technology, Keio University, Yokohama 223-8522 (Japan)

    2014-06-30

    We have observed an irreversible ultrafast crystalline-to-amorphous phase transition in Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide alloy thin film using broadband single-shot imaging spectroscopy. The absorbance change that accompanied the ultrafast amorphization was measured via single-shot detection even for laser fluences above the critical value, where a permanent amorphized mark was formed. The observed rise time to reach the amorphization was found to be ∼130–200 fs, which was in good agreement with the half period of the A{sub 1} phonon frequency in the octahedral GeTe{sub 6} structure. This result strongly suggests that the ultrafast amorphization can be attributed to the rearrangement of Ge atoms from an octahedral structure to a tetrahedral structure. Finally, based on the dependence of the absorbance change on the laser fluence, the stability of the photoinduced amorphous phase is discussed.

  4. Photosensitivity of pulsed laser deposited Ge{sub 20}As{sub 20}Se{sub 60} and Ge{sub 10}As{sub 30}Se{sub 60} amorphous thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hawlová, P.; Olivier, M.; Verger, F. [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Nazabal, V. [Chemical Sciences Institute of Rennes (ISCR), Glasses and Ceramics Team, UMR-CNRS 6226, University of Rennes 1, 35042 Rennes Cedex (France); Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Němec, P., E-mail: petr.nemec@upce.cz [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic)

    2013-10-15

    Graphical abstract: - Highlights: • Amorphous Ge{sub 20}As{sub 20}Se{sub 60}/Ge{sub 10}As{sub 30}Se{sub 60} films are fabricated by pulsed laser deposition. • Photosensitivity of the layers is studied by employing spectroscopic ellipsometry. • As-deposited/relaxed thin films were irradiated by 593, 635, and 660 nm lasers. • Ge{sub 20}As{sub 20}Se{sub 60} layers present almost zero photorefraction in relaxed state. - Abstract: Amorphous Ge{sub 20}As{sub 20}Se{sub 60} and Ge{sub 10}As{sub 30}Se{sub 60} thin films are fabricated by pulsed laser deposition. Prepared films are characterized in terms of their morphology, chemical composition, and optical properties. Special attention is given to the photosensitivity of the layers, which was studied by spectroscopic ellipsometry with as-deposited, annealed and exposed films by three different laser sources (593, 635, and 660 nm). The results show better photostability for Ge{sub 20}As{sub 20}Se{sub 60} thin films, where photoinduced change of optical band gap was found to be equal or less than 0.04 eV and these layers present almost zero photorefraction.

  5. Coherent phonon modes of crystalline and amorphous Ge2Sb2Te5 thin films: A fingerprint of structure and bonding

    International Nuclear Information System (INIS)

    Femtosecond optical pump-probe measurements have been made upon epitaxial, polycrystalline, and amorphous thin films of Ge2Sb2Te5 (GST). A dominant coherent optical phonon mode of 3.4 THz frequency is observed in time-resolved anisotropic reflectance (AR) measurements of epitaxial films, and is inferred to have 3-dimensional T2-like character based upon the dependence of its amplitude and phase on pump and probe polarization. In contrast, the polycrystalline and amorphous phases exhibit a comparatively weak mode of about 4.5 THz frequency in both reflectivity (R) and AR measurements. Raman microscope measurements confirm the presence of the modes observed in pump-probe measurements, and reveal additional modes. While the Raman spectra are qualitatively similar for all three phases of GST, the mode frequencies are found to be different within experimental error, ranging from 3.2 to 3.6 THz and 4.3 to 4.7 THz, indicating that the detailed crystallographic structure has a significant effect upon the phonon frequency. While the lower frequency (3.6 THz) mode of amorphous GST is most likely associated with GeTe4 tetrahedra, modes in epitaxial (3.4 THz) and polycrystalline (3.2 THz) GST could be associated with either GeTe6 octahedra or Sb-Te bonds within defective octahedra. The more polarizable Sb-Te bonds are the most likely origin of the higher frequency (4.3–4.7 THz) mode, although the influence of Te-Te bonds cannot be excluded. The effect of high pump fluence, which leads to irreversible structural changes, has been explored. New modes with frequency of 3.5/3.6 THz in polycrystalline/amorphous GST may be associated with Sb2Te3 or GeTe4 tetrahedra, while a 4.2 THz mode observed in epitaxial GST may be related to segregation of Sb

  6. Amorphous to fcc-polycrystal transition in Ge2Sb2Te5 thin films studied by electrical measurements: Data analysis and comparison with direct microscopy observations

    International Nuclear Information System (INIS)

    We experimentally investigate the isothermal amorphous-to-fcc polycrystalline phase transition process in amorphous Ge2Sb2Te5 thin films prepared by sputtering. The amorphous layers were either as deposited or formed by Ar+ ion implantation after crystallization at 300 deg. C. The kinetics of the amorphous-to-polycrystal transition are analyzed through electrical measurements, in which the Johnson-Mehl-Avrami-Kolmogorov theory is employed. The procedure to extract the kinetics of the phase transition from conductivity versus time data is carefully discussed and compared to data of cross-sectional transmission electron microscopy images versus anneal time. By following this proposed procedure, the nucleation and growth parameters, and the activation energies have been determined. Results indicate that the process of isothermal crystallization in Ge2Sb2Te5 takes place in two stages, in which the Avrami exponent changes in the range from 3 to 1. These results are understood in terms of modifications in the kinetics of the phase transition.

  7. Work function contrast and energy band modulation between amorphous and crystalline Ge{sub 2}Sb{sub 2}Te{sub 5} films

    Energy Technology Data Exchange (ETDEWEB)

    Tong, H.; Yang, Z.; Yu, N. N.; Zhou, L. J.; Miao, X. S., E-mail: miaoxs@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2015-08-24

    The work function (WF) is of crucial importance to dominate the carrier transport properties of the Ge-Sb-Te based interfaces. In this letter, the electrostatic force microscopy is proposed to extract the WF of Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) films with high spatial and energy resolution. The measured WF of as-deposited amorphous GST is 5.34 eV and decreases drastically after the amorphous GST is crystallized by annealing or laser illumination. A 512 × 512 array 2D-WF map is designed to study the WF spatial distribution and shows a good consistency. The WF contrast between a-GST and c-GST is ascribed to band modulation, especially the modification of electron affinity including the contribution of charges or dipoles. Then, the band alignments of GST/n-Si heterostructures are obtained based on the Anderson's rule. Due to the band modulation, the I-V characteristics of a-GST/Si heterojunction and c-GST/Si heterojunction are very different from each other. The quantitative relationship is calculated by solving the Poisson's equation, which agrees well with the I-V measurements. Our findings not only suggest a way to further understand the electrical transport properties of Ge-Sb-Te based interfaces but also provide a non-touch method to distinguish crystalline area from amorphous matrix with high spatial resolution.

  8. Enhancing performance of amorphous SiGe single junction solar cells by post-deposition thermal annealing

    International Nuclear Information System (INIS)

    In this work, amorphous silicon-germanium (a-SiGe:H) p-i-n single junction solar cells are fabricated using a 40 MHz plasma-enhanced chemical vapor deposition system. Their s-curve characteristics were observed by current density-voltage measurements. Thermal annealing of cells at 150 °C in a vacuum effectively overcame the s-curve behavior. Additionally, comparing the external quantum efficiency spectra of annealed samples with those of as-deposited samples revealed that the spectral response of annealed cells was higher in the long wavelength range (600 ∼ 900 nm). Raman spectroscopy and electrical conductivity analyses revealed that the n-type microcrystalline silicon (n-μc-Si:H) layers of as-deposited cells were not optimal. Experimental results indicate that the i/n barrier heights of the as-deposited and annealed samples were 0.31 eV and 0.20 eV , respectively. The high energy barrier implies that the bad collection ability of charge carriers near the i/n interfaces of solar cells. An energy conversion efficiency of 6.38% was achieved after post-deposition annealing. The improvement in efficiency is concluded to have been caused largely by retention of n-μc-Si:H layers of high crystallinity and electrical conductivity after annealing. - Highlights: ► Demonstration of thermal annealing in overcoming the s-curve behavior. ► Annealing treatments lead to better n-type microcrystalline silicon thin films. ► Energy conversion efficiency of 6.38% was achieved after post-deposition annealing

  9. Preparing amorphous graphite/resin bipolar plate by mould pressing process%模压成型工艺制备微晶石墨/树脂双极板

    Institute of Scientific and Technical Information of China (English)

    林政宇; 张杰; 刘兵

    2011-01-01

    Amorphous graphite/resin composite bipolar plates for PEMFC were prepared by mould pressing process. Thermoset-ting resin was used as the binder and amorphous graphite as the conductive filler. The effects of filler particle size,filler content, thermosetting resin and moulding condition on the performance of bipolar plates were studied. The bipolar plate prepared with ther-mosetting resin P104-02 whose content was 18% ~ 20% as binder,amorphous graphite whose particle size was 200 ~ 250 mesh as conductive filler,in the moulding condition of 140- 145℃ , 15 - 20 Mpa and 18 ~ 22 min had such performance:flexural strength > 25 Mpa,conductivity > 100 S/cm,permeability < 3 × 10-5 ml/(s·cm2).%以微晶石墨为导电骨料,热固性树脂为粘结剂,通过模压成型工艺制备PEMFC用微晶石墨/树脂复合材料双极板.研究了骨科粒度分布、骨料配比、树脂种类和成型条件等对双极板性能的影响.以含量为18%~20%的双酚A乙烯基树脂(P104-02)为粘结剂,粒度为200~250目的石墨粉为导电骨料,在140 ~ 145℃、15 ~ 20 MPa及18~22 min的成型条件下制备的双极板的性能为:弯曲强度> 25 MPa、电导率>100 S/cm、气体渗透率<3×10-5 ml/(s·cm2).

  10. A study on the properties of C-doped Ge8Sb2Te11 thin films during an amorphous-to-crystalline phase transition

    Science.gov (United States)

    Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

    2016-04-01

    In this work, we evaluated the structural, electrical and optical properties of carbon-doped Ge8Sb2Te11 thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve the thermal stability. Ge8Sb2Te11 and carbon-doped Ge8Sb2Te11 films of 250 nm in thickness were deposited on p-type Si (100) and glass substrates by using a RF magnetron reactive co-sputtering system at room temperature. The fabricated films were annealed in a furnance in the 0 ~ 400°C temperature range. The structural properties were analyzed by using X-ray diffraction (XRD), and the result showed that the carbon-doped Ge8Sb2Te11 had a face-centeredcubic (fcc) crystalline structure and an increased crystallization temperature ( T c ). An increase in the T c leads to thermal stability in the amorphous state. The optical properties were analyzed by using an UV-Vis-IR spectrophotometer, and the result showed an increase in the optical-energy band gap ( E op ) in the crystalline materials and an increase in the E op difference (Δ E op ), which is a good effect for reducing the noise in the memory device. The electrical properties were analyzed by using a 4-point probe, which showed an increase in the sheet resistance ( R s ) in the amorphous state and the crystalline state, which means a reduced programming current in the memory device.

  11. High Power SiGe X-Band (8~10GHz) Heterojunction Bipolar Transistors and Amplifiers

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Limited by increased parasitics and thermal effects as device size increases, current commercial SiGe power HBTs are difficult to operate at X-band (8~ 12GHz) frequencies with adequate power added efficiencies at high power levels. We find that, by changing the heterostructure and doping profile of SiGe HBTs, their power gain can be significantly improved without resorting to substantial lateral scaling. Furthermore, employing a common-base configuration with a proper doping profile instead of a common-emitter configuration improves the power gain characteristics of SiGe HBTs, thus permitting these devices to be efficiently operated at X-band frequencies. In this paper,we report the results of SiGe power HBTs and MMIC power amplifiers operating at 8~10GHz. At 10GHz,a 22.5dBm (178mW) RF output power with a concurrent gain of 7.32dB is measured at the peak power-added efficiency of 20.0%, and a maximum RF output power of 24.0dBm (250mW) is achieved from a 20 emitter finger SiGe power HBT. The demonstration of a single-stage X-band medium-power linear MMIC power amplifier is also realized at 8GHz. Employing a 10-emitter finger SiGe HBT and on-chip input and output matching passive components, a linear gain of 9.7dB,a maximum output power of 23.4dBm,and peak power added efficiency of 16% are achieved from the power amplifier. The MMIC exhibits very low distortion with 3rd order intermodulation (IM) suppression C/I of -13dBc at an output power of 21.2dBm and over 20dBm 3rd order output intercept point (OIP3).

  12. Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy

    International Nuclear Information System (INIS)

    Ge-Sb-Te-based phase-change memory is one of the most promising candidates to succeed the current flash memories. The application of phase-change materials for data storage and memory devices takes advantage of the fast phase transition (on the order of nanoseconds) and the large property contrasts (e.g., several orders of magnitude difference in electrical resistivity) between the amorphous and the crystalline states. Despite the importance of Ge-Sb-Te alloys and the intense research they have received, the possible phases in the temperature-pressure diagram, as well as the corresponding structure-property correlations, remain to be systematically explored. In this study, by subjecting the amorphous Ge2Sb2Te5 (a-GST) to hydrostatic-like pressure (P), the thermodynamic variable alternative to temperature, we are able to tune its electrical resistivity by several orders of magnitude, similar to the resistivity contrast corresponding to the usually investigated amorphous-to-crystalline (a-GST to rock-salt GST) transition used in current phase-change memories. In particular, the electrical resistivity drops precipitously in the P = 0 to 8 GPa regime. A prominent structural signature representing the underlying evolution in atomic arrangements and bonding in this pressure regime, as revealed by the ab initio molecular dynamics simulations, is the reduction of low-electron-density regions, which contributes to the narrowing of band gap and delocalization of trapped electrons. At P > 8 GPa, we have observed major changes of the average local structures (bond angle and coordination numbers), gradually transforming the a-GST into a high-density, metallic-like state. This high-pressure glass is characterized by local motifs that bear similarities to the body-centered-cubic GST (bcc-GST) it eventually crystallizes into at 28 GPa, and hence represents a bcc-type polyamorph of a-GST.

  13. Absence of mode-locking resonance for driven vortices in a thin amorphous MoxGe1−x film

    International Nuclear Information System (INIS)

    We present measurements of the mode-locking (ML) resonance for the thin amorphous MoxGe1−x film with weak pinning. In contrast to the thick film, where the clear ML resonance indicative of driven vortex lattices is observed over a wide temperature T and field B range, any sign of ML is not detected for the thin film down to below 1 K The results suggest that the vortex lattice for the thin film may be unstable against small pinning. We construct the vortex phase diagram in the B − T plane, which consists of disordered solid phase and large liquid phase.

  14. Coherent phonon modes of crystalline and amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} thin films: A fingerprint of structure and bonding

    Energy Technology Data Exchange (ETDEWEB)

    Shalini, A.; Liu, Y.; Srivastava, G. P.; Hicken, R. J. [Department of Physics and Astronomy, University of Exeter, Exeter EX4 4QL (United Kingdom); Katmis, F.; Braun, W. [Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2015-01-14

    Femtosecond optical pump-probe measurements have been made upon epitaxial, polycrystalline, and amorphous thin films of Ge{sub 2}Sb{sub 2}Te{sub 5} (GST). A dominant coherent optical phonon mode of 3.4 THz frequency is observed in time-resolved anisotropic reflectance (AR) measurements of epitaxial films, and is inferred to have 3-dimensional T{sub 2}-like character based upon the dependence of its amplitude and phase on pump and probe polarization. In contrast, the polycrystalline and amorphous phases exhibit a comparatively weak mode of about 4.5 THz frequency in both reflectivity (R) and AR measurements. Raman microscope measurements confirm the presence of the modes observed in pump-probe measurements, and reveal additional modes. While the Raman spectra are qualitatively similar for all three phases of GST, the mode frequencies are found to be different within experimental error, ranging from 3.2 to 3.6 THz and 4.3 to 4.7 THz, indicating that the detailed crystallographic structure has a significant effect upon the phonon frequency. While the lower frequency (3.6 THz) mode of amorphous GST is most likely associated with GeTe{sub 4} tetrahedra, modes in epitaxial (3.4 THz) and polycrystalline (3.2 THz) GST could be associated with either GeTe{sub 6} octahedra or Sb-Te bonds within defective octahedra. The more polarizable Sb-Te bonds are the most likely origin of the higher frequency (4.3–4.7 THz) mode, although the influence of Te-Te bonds cannot be excluded. The effect of high pump fluence, which leads to irreversible structural changes, has been explored. New modes with frequency of 3.5/3.6 THz in polycrystalline/amorphous GST may be associated with Sb{sub 2}Te{sub 3} or GeTe{sub 4} tetrahedra, while a 4.2 THz mode observed in epitaxial GST may be related to segregation of Sb.

  15. The phase-change kinetics of amorphous Ge2Sb2Te5 and device characteristics investigated by thin-film mechanics

    International Nuclear Information System (INIS)

    For high switching speed and high reliability of phase-change random access memory (PcRAM), we need to identify materials that enable fast crystallization at elevated temperatures but are stable at and above room temperature. Achieving this goal requires a breakthrough in our understanding of the unique crystallization kinetics of amorphous phase change materials as a fragile glass, described as the non-Arrhenius behavior of atomic mobility. It is a highly rewarding task to unravel the unconventional crystallization kinetics and related properties, because these properties can be utilized to predict the device characteristics. This manuscript utilizes the thin-film mechanics to investigate the crystallization kinetics of amorphous Ge2Sb2Te5 phase-change materials doped with Al, Bi, C and N, which is an effective method to analyze the structural changes in amorphous materials. Crystallization temperature, super-cooled liquid region, glass transition temperature and fragility are measured to describe the crystallization kinetics tuned by doping; characteristic fragile-to-strong transition is observed for C and N dopings due to their structural feature as an interstitial dopant. Consequently, doping effects on the phase stability and atomic mobility manifested by the crystallization temperature and the super-cooled liquid region (or 1/fragility) successfully correspond with PcRAM characteristics, i.e., reliability and switching speed, respectively

  16. Optical waveguide based on amorphous Er{sup 3+}-doped Ga-Ge-Sb-S(Se) pulsed laser deposited thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.f [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Nemec, P. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Jurdyc, A.M [Laboratoire de Physico-Chimie des Materiaux Luminescents (LPCML), UMR CNRS 5620, Universite Claude Bernard-Lyon 1, Villeurbanne (France); Zhang, S.; Charpentier, F. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Lhermite, H. [IETR-Microelectronique, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Charrier, J. [FOTON, UMR 6082-ENSSAT, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Guin, J.P. [LARMAUR, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Moreac, A. [Institut de Physique de Rennes, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Frumar, M. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Adam, J.-L. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France)

    2010-06-30

    Amorphous chalcogenide films play a motivating role in the development of integrated planar optical circuits due to their potential functionality in near infrared (IR) and mid-IR spectral regions. More specifically, the photoluminescence of rare earth ions in amorphous chalcogenide films can be used in laser and amplifier devices in the IR spectral domain. The aim of the present investigation was to optimize the deposition conditions for the fabrication of undoped and Er{sup 3+} doped sulphide and selenide thin films with nominal composition Ga{sub 5}Ge{sub 20}Sb{sub 10}S(Se){sub 65} or Ga{sub 5}Ge{sub 23}Sb{sub 5}S{sub 67} by pulsed laser deposition (PLD). The study of compositional, morphological and structural characteristics of the layers was realized by scanning electron microscopy-energy dispersive spectroscopy, atomic force microscopy and Raman spectroscopy analyses, respectively. Some optical properties (transmittance, index of refraction, optical band gap, etc.) of prepared chalcogenide films and optical losses were investigated as well. The clear identification of near-IR photoluminescence of Er{sup 3+} ions was obtained for both selenide and sulphide films. The decay of the {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} transition at 1.54 {mu}m in Er{sup 3+} doped Ga{sub 5}Ge{sub 20}Sb{sub 10}S{sub 65} PLD sulphide films was studied to assess the effects of film thickness, rare earth concentration and multilayer PLD deposition on their spectroscopic properties.

  17. Bipolar bozukluklarda intihar

    OpenAIRE

    SAYIL, Işık

    1997-01-01

    Makalede bipolar bozukluklarda intihar olgusuuygulamadan gelen deneyimler doğrultusundagözden geçirilmiştir. İntihar girişimlerinde ilk yardımtartışılmış ve acil serviste kriz ekibinin çalışmasıanlatılmıştır.

  18. Structural investigation of the amorphous/crystalline interface by means of quantitative high-resolution transmission electron microscopy on the systems a-Si/c-Si and a-Ge/c-Si; Strukturelle Untersuchung der amorph/kristallinen Grenzflaeche mittels quantitativer hochaufloesender Transmissionselektronenmikroskopie an den Systemen a-Si/c-Si und a-Ge/c-Si

    Energy Technology Data Exchange (ETDEWEB)

    Thiel, K.

    2006-11-02

    In this Thesis the interfaces between covalently bonded crystalline and amorphous materials were studied with regard to the induced ordering in the amorphous material in the interfacial region by means of high-resolution transmission electron microscopy (HREM). The interface between amorphous germanium and crystalline silicon and the interface between amorphous and crystalline silicon served as material system. In order to quantify the influence of the crystalline order on the amorphous material, the HREM images were periodically averaged along the interface. The intensity components, which are correlated with the period of the lattice image, could thus be separated from the statistical intensity fluctuations, which are characteristic for images of amorphous materials. Since amorphous materials can only be described meaningful by statistical distribution functions, for the induced order a three-dimensional distribution function {rho}{sub 3D}(r) was taken as a basis, which describes the probability to find an atom in the amorphous material, if r=0 is the position of an atom in the crystal. Its two-dimensional projection, {rho}, can be determined using iterative image matching techniques on averaged experimental and simulated interface images. For the analyzed material systems {rho} exhibits lateral ordering as well as a pronounced layering in the vicinity of the interface. In the case of the a-Si/c-Si sample the mean orientation of bonds was 70.5 , as is in the case of the undistorted diamond lattice, while for the a-Ge/c-Si sample 65 resulted. The standard deviation for the distribution of the deviations from the mean bond angle yields for the a-Ge/c-Si sample in the first atomic layer a value of 11.3 and for the a-Si/c-Si sample 1.9 . These results suggest the conclusion, that the differences in these values are to be interpreted as the reaction of the amorphous material to the volume misfit. Although for both material systems 1.4 nm was calculated for the width

  19. A cross sectional study on the crystallization of amorphous Ge2Sb2Te5 films induced by a single-pulse ultraviolet laser

    Science.gov (United States)

    Zhu, Z.; Liu, F. R.; Yang, J. F.; Fan, Z. K.; Liu, F.; Sun, N. X.

    2016-07-01

    In this paper, the crystallization along the film thickness of amorphous Ge2Sb2Te5 (a-GST) films induced by a single-pulse ultraviolet laser was investigated by using transmission electron microscopy (TEM) integrated with SAED. TEM observations showed that the crystalline GST (c-GST) was composed of columnar grains at the top surface and equaixed grains inside the film. Moreover, the columnar grains became larger with the increase of laser fluence. A three-dimensional finite element method simulation was further used to elucidate the temperature field by a nanosecond excimer laser in the cross section of the a-GST film. A big temperature gradient obtained at the top surface in the cooling process caused the formation of columnar grains, while columnar grains were gradually substituted by small equaixed grains with the decrease of temperature gradient downwards the film interior.

  20. High-performance metal-insulator-metal capacitor with Ge-stabilized tetragonal ZrO2/amorphous La-doped ZrO2 dielectric

    Science.gov (United States)

    Wu, Yung-Hsien; Lin, Chia-Chun; Chen, Lun-Lun; Hu, Yao-Chung; Wu, Jia-Rong; Wu, Min-Lin

    2011-01-01

    A Ge-stabilized tetragonal ZrO2 dielectric with a permittivity (κ) value of 36.5 has been obtained by annealing a ZrO2/Ge/ZrO2 laminate at 500 °C and it is a more reliable approach toward stabilizing a tetragonal ZrO2 film. However, metal-insulator-metal (MIM) capacitors with the sole tetragonal ZrO2 film as an insulator achieve a high capacitance density of 27.8 fF/μm2 at the price of a degraded quadratic voltage coefficient of capacitance (VCC) of 81 129 ppm/V2 and unacceptably high leakage current. By capping an amorphous La-doped ZrO2 layer with a κ value of 26.3 to block grain boundaries-induced leakage paths of the crystalline ZrO2 dielectric, high-performance MIM capacitors in terms of a capacitance density of 19.8 fF/μm2, a VCC of 3135 ppm/V2, leakage current of 6.5×10-8 A/cm2 at -1 V, as well as a satisfactory capacitance change of 1.21% after ten-year operation can be realized.

  1. Electron-phonon interaction and thermal boundary resistance at the crystal-amorphous interface of the phase change compound GeTe

    International Nuclear Information System (INIS)

    Phonon dispersion relations and electron-phonon coupling of hole-doped trigonal GeTe have been computed by density functional perturbation theory. This compound is a prototypical phase change material of interest for applications in phase change non-volatile memories. The calculations allowed us to estimate the electron-phonon contribution to the thermal boundary resistance at the interface between the crystalline and amorphous phases present in the device. The lattice contribution to the thermal boundary resistance has been computed by non-equilibrium molecular dynamics simulations with an interatomic potential based on a neural network scheme. We find that the electron-phonon term contributes to the thermal boundary resistance to an extent which is strongly dependent on the concentration and mobility of the holes. Further, for measured values of the holes concentration and electrical conductivity, the electron-phonon term is larger than the contribution from the lattice. It is also shown that the presence of Ge vacancies, responsible for the p-type degenerate character of the semiconductor, strongly affects the lattice thermal conductivity of the crystal

  2. Effects of H2 gas addition into process and H ion implantation on the microstructure of hydrogenated amorphous carbon films prepared by bipolar-type plasma based ion implantation

    International Nuclear Information System (INIS)

    Hydrogenated amorphous carbon films are deposited on Si(1 0 0) and SiO2 glass substrates by a bipolar-type plasma based ion implantation system. The films are prepared using toluene gas at a constant flow rate of 2 sccm. The effects of H2 gas addition during deposition on the microstructure of the films are examined by electrical conductivity measurements, Raman spectroscopy, elastic recoil detection analysis (ERDA) and optical spectroscopy. In addition, H implantation is also carried out using H2 plasma discharge. Thickness of the films is approximately 60 nm for all samples. It is found that electrical conductivity slightly increases with increasing additive H2 flow rate. However, the conductivity drastically decreases after H implantation. Raman analysis reveals that H2 gas addition slightly causes the film graphitization, but the H implantation does it amorphization. The results of ERDA show that the H concentration in the films slightly decreases with increasing H2 gas addition, but increases by H implantation. In spite of H2 gas addition, the optical band gap is not changed and kept approximately 0.7 eV. However, H implantation makes it increase up to approximately 1.0 eV

  3. Bipolar Disorder

    Science.gov (United States)

    Bipolar disorder is a serious mental illness. People who have it go through unusual mood changes. They go ... The down feeling is depression. The causes of bipolar disorder aren't always clear. It runs in families. ...

  4. Bipolar Disorder

    Science.gov (United States)

    Bipolar disorder is a serious mental illness. People who have it go through unusual mood changes. They ... The down feeling is depression. The causes of bipolar disorder aren't always clear. It runs in ...

  5. Bipolar Disorder

    Science.gov (United States)

    ... types of psychotherapies. Other Treatment Options Electroconvulsive Therapy (ECT) : ECT can provide relief for people with severe bipolar ... been able to recover with other treatments. Sometimes ECT is used for bipolar symptoms when other medical ...

  6. Bipolar semicopulas

    Czech Academy of Sciences Publication Activity Database

    Greco, S.; Mesiar, Radko; Rindone, F.

    Linz: Univesitatsdirektion, JKU Linz, Austria, 2013. s. 63-65. [Linz Seminar on Fuzzy Set Theory /34./. 26.02.2013-02.03.2013, Linz] R&D Projects: GA ČR GAP402/11/0378 Keywords : bipolar integral * bipolar semicopula * bipolar aggregation Subject RIV: BA - General Mathematics http://library.utia.cas.cz/separaty/2013/E/mesiar-0422906.pdf

  7. Study of temperature and pressure dependences of electric properties of amorphous Ag-Ge-As-S chalcogenides containing carbon nanotubes

    International Nuclear Information System (INIS)

    Frequency and temperature dependences of impedance of AgGe1+xAs1-x(S+CNT)3, x = 0.4; 0.5; 0.6 were measured. There are maxima on frequency dependences of tangent of loss, which can be connected with relaxation processes inside the sample (the maximum at high frequencies) and the second maximum can be connected with processes occurring on the sample-electrode border. Activation energy of all synthesized materials was estimated to be near 0.5 eV. The relaxation of electric resistance at fixed pressures within the pressure range of 30 to 50 GPa was observed. It is established that the resistance decreases exponentially with time within this range of pressures

  8. Comparative study on crystallization characteristics of amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} films by an ultraviolet laser radiation and isothermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Z. [Institute of Laser Engineering, Beijing University of Technology, 100124, Beijing (China); Liu, F.R., E-mail: Liufr@bjut.edu.cn [Institute of Laser Engineering, Beijing University of Technology, 100124, Beijing (China); Wang, Z.M.; Fan, Z.K. [Institute of Laser Engineering, Beijing University of Technology, 100124, Beijing (China); Liu, F. [State Key Laboratory of Solidification Processing, Northwestern Poly technical University (China); Sun, N.X. [Electrical and Computer Engineering Department, Northeastern University, MA02115 (United States)

    2015-04-30

    Highlights: • Crystallization characteristics of α-GST by laser radiation and isothermal annealing were compared. • Effects of film thickness on the crystallization were also demonstrated. • A thinner α-GST film showed a more complete crystallization owing to thermal convection. • An obvious red shift in the Raman spectrum was observed for the laser induced crystallization. - Abstract: A comparative study on crystallization characteristics of amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) films induced by an ultraviolet pulse laser and isothermal annealing was carried out by using transmission electron microscopy (TEM) and Raman scattering. TEM observations showed that the mean grain size induced by a pulse laser was in the nanoscale. A more complete crystallization in the 50 nm thick GST film was obtained which was ascribed to the effect of thermal convection produced in a thinner GST film, however, when the film thickness was over 70 nm, no significant decrease in the mean grain size was found because of the effect of heating mode, where a surface heat source by the ultraviolet laser radiation caused a quick temperature drop. The body heating mode at the isothermal annealing condition made the mean grain size increase remarkably with the increase of film thickness, which could be up to the submicron scale, relative to the size of film thickness. The Raman spectrum analysis showed that a red shift was observed in laser induced Ge{sub 2}Sb{sub 2}Te{sub 5} films as compared to the isothermal annealing samples, which was caused by the resultant stress of the thermal stress and phase transformation stress.

  9. Comparative study on crystallization characteristics of amorphous Ge2Sb2Te5 films by an ultraviolet laser radiation and isothermal annealing

    International Nuclear Information System (INIS)

    Highlights: • Crystallization characteristics of α-GST by laser radiation and isothermal annealing were compared. • Effects of film thickness on the crystallization were also demonstrated. • A thinner α-GST film showed a more complete crystallization owing to thermal convection. • An obvious red shift in the Raman spectrum was observed for the laser induced crystallization. - Abstract: A comparative study on crystallization characteristics of amorphous Ge2Sb2Te5 (GST) films induced by an ultraviolet pulse laser and isothermal annealing was carried out by using transmission electron microscopy (TEM) and Raman scattering. TEM observations showed that the mean grain size induced by a pulse laser was in the nanoscale. A more complete crystallization in the 50 nm thick GST film was obtained which was ascribed to the effect of thermal convection produced in a thinner GST film, however, when the film thickness was over 70 nm, no significant decrease in the mean grain size was found because of the effect of heating mode, where a surface heat source by the ultraviolet laser radiation caused a quick temperature drop. The body heating mode at the isothermal annealing condition made the mean grain size increase remarkably with the increase of film thickness, which could be up to the submicron scale, relative to the size of film thickness. The Raman spectrum analysis showed that a red shift was observed in laser induced Ge2Sb2Te5 films as compared to the isothermal annealing samples, which was caused by the resultant stress of the thermal stress and phase transformation stress

  10. Compositional Dependence of the Optical Properties of Amorphous Semiconducting Glass Se80Ge20- x Cd x (0 ≤ x ≤ 12 at.%) Thin Films

    Science.gov (United States)

    Hegab, N. A.; Farid, A. S.; Shakra, A. M.; Afifi, M. A.; Alrebati, A. M.

    2016-07-01

    Se80Ge20- x Cd x (0 ≤ x ≤ 12 at.%) compositions were prepared by a quenching technique. Thin films of the obtained compositions were deposited on dry clean glass substrates by a thermal evaporation technique. The chemical composition of the film samples have been determined by energy dispersive x-ray spectroscopy (EDX). X-ray diffraction measurements showed the amorphous nature of the studied films. The optical constants ( n, k) were determined for the studied films using spectrophotometric measurements of transmittance T( λ) in the wavelength range (350 nm to 2500 nm), and using Swanepoel's method. The values of the dispersion energy E d, oscillator energy E o, the lattice dielectric constant ɛ ∞L and the high-frequency dielectric constant ɛ s were determined. The optical band gap Eg^{{opt}} is estimated for all compositions from the absorption coefficient α. The analysis of the optical absorption data revealed the existence of allowed indirect transitions for all compositions. The effect of adding Cd content on the obtained optical parameters was also discussed.

  11. Compositional Dependence of the Optical Properties of Amorphous Semiconducting Glass Se80Ge20-x Cd x (0 ≤ x ≤ 12 at.%) Thin Films

    Science.gov (United States)

    Hegab, N. A.; Farid, A. S.; Shakra, A. M.; Afifi, M. A.; Alrebati, A. M.

    2016-04-01

    Se80Ge20-x Cd x (0 ≤ x ≤ 12 at.%) compositions were prepared by a quenching technique. Thin films of the obtained compositions were deposited on dry clean glass substrates by a thermal evaporation technique. The chemical composition of the film samples have been determined by energy dispersive x-ray spectroscopy (EDX). X-ray diffraction measurements showed the amorphous nature of the studied films. The optical constants (n, k) were determined for the studied films using spectrophotometric measurements of transmittance T(λ) in the wavelength range (350 nm to 2500 nm), and using Swanepoel's method. The values of the dispersion energy E d, oscillator energy E o, the lattice dielectric constant ɛ ∞L and the high-frequency dielectric constant ɛ s were determined. The optical band gap Eg^{{opt}} is estimated for all compositions from the absorption coefficient α. The analysis of the optical absorption data revealed the existence of allowed indirect transitions for all compositions. The effect of adding Cd content on the obtained optical parameters was also discussed.

  12. Photo-induced optical bleaching in Ge12Sb25S63 amorphous chalcogenide thin films: effect of 532 nm laser illumination

    Science.gov (United States)

    Naik, Ramakanta; Jena, Shuvendu; Ganesan, R.; Sahoo, N. K.

    2015-03-01

    The photo-induced effects of Ge12Sb25S63 films illuminated with 532 nm laser light are investigated from transmission spectra measured by FTIR spectroscopy. The material exhibits photo-bleaching (PB) when exposed to band gap light for a prolonged time in a vacuum. The PB is ascribed to structural changes inside the film as well as surface photo-oxidation. The amorphous nature of thin films was detected by x-ray diffraction. The chemical composition of the deposited thin films was examined by energy dispersive x-ray analysis (EDAX). The refractive indices of the films were obtained from the transmission spectra based on an inverse synthesis method and the optical band gaps were derived from optical absorption spectra using the Tauc plot. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple-DiDomenico model. It was found that the mechanism of the optical absorption follows the rule of the allowed non-direct transition. Raman and x-ray photoelectron spectra (XPS) were measured and decomposed into several peaks that correspond to the different structural units which support the optical changes.

  13. Origin of high thermal stability of amorphous Ge1Cu2Te3 alloy: A significant Cu-bonding reconfiguration modulated by Te lone-pair electrons for crystallization

    International Nuclear Information System (INIS)

    Ge1Cu2Te3 is an important candidate for high-temperature phase change memory due to the fine amorphous stability. Yet, the basic bonding chemistry for its high-temperature application is still not completely clear. In this work, a new bonding mechanism for its amorphous and crystalline phases is proposed and demonstrated by first-principles calculations. Compared to the tetrahedral environment distributed evenly in crystalline form, Cu atoms in the amorphous state tend to be accumulated as trigonal clusters. For the crystalline phase, a bonding configuration of nonequivalent sp3 hybridization with Te lone-pair electrons is proposed without Cu d electron participation. In the amorphous phase, however, a significant bonding reconfiguration of Cu d electrons occurs due to the isolation of the Te lone-pair electrons. Therefore, the notable contrast in the Cu atomic and electronic structures between the crystalline and amorphous phases results in an obvious phase transition barrier for high-temperature storage. The mechanism presented in this study serves as a reference for other transition-metal alloyed phase-change materials

  14. Bipolar Disorder.

    Science.gov (United States)

    Spearing, Melissa

    Bipolar disorder, a brain disorder that causes unusual shifts in a person's mood, affects approximately one percent of the population. It commonly occurs in late adolescence and is often unrecognized. The diagnosis of bipolar disorder is made on the basis of symptoms, course of illness, and when possible, family history. Thoughts of suicide are…

  15. Thermal stability and electrical properties of Se{sub 90}Ge{sub 10-x}In{sub x} amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Abo Ghazala, M.S. [Physics Department, Faculty of Science, Menoufia University, Sheben El-Koom (Egypt); Aboelhasn, E. [Physics Department, Faculty of Science, Banha University, Banha (Egypt); Amar, A.H. [Physics Department, Faculty of Education, Ain Shams University, Cairo (Egypt); Gamel, W. [Physics Department, Faculty of Science, Taiz University, Taiz (Yemen)

    2011-11-15

    Bulk glasses of Se{sub 90}Ge{sub 10-x}In{sub x}(where x = 2, 4 and 6 at.%) were prepared using a conventional rapid quenching technique. The amorphous nature and the crystalline phases of the samples annealed at 393 K for 25 h were investigated using X-ray diffraction. Calorimetric analysis of the bulk glassy samples has been carried out using differential scanning calorimetric (DSC) under non-isothermal condition. It was found that these glasses exhibit double glass transitions and double-stage crystallization transitions on heating. The glass transition temperature, T{sub g} and the crystallization transformation temperature, T{sub c} were found to be dependent on the composition and heating rates. The activation energy for glass transition (E{sub g}) and that for crystallization (E{sub c}) were evaluated using different empirical approaches and their composition dependence was discussed. The results revealed that the activation energy of crystallization, E{sub c} increases with rising the In content. The electrical resisitivity of the prepared glasses was measured as a function of temperature and annealing time. It was found that the activation energy of conduction deduced from the temperature dependence of the resistivity increases with increasing the In content. On the other hand it was found that the activation energy of crystallization deduced from the annealing time dependence of the resistivity using Avrami's equation is compositional dependent. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Bipolar disorder.

    Science.gov (United States)

    Grande, Iria; Berk, Michael; Birmaher, Boris; Vieta, Eduard

    2016-04-01

    Bipolar disorder is a recurrent chronic disorder characterised by fluctuations in mood state and energy. It affects more than 1% of the world's population irrespective of nationality, ethnic origin, or socioeconomic status. Bipolar disorder is one of the main causes of disability among young people, leading to cognitive and functional impairment and raised mortality, particularly death by suicide. A high prevalence of psychiatric and medical comorbidities is typical in affected individuals. Accurate diagnosis of bipolar disorder is difficult in clinical practice because onset is most commonly a depressive episode and looks similar to unipolar depression. Moreover, there are currently no valid biomarkers for the disorder. Therefore, the role of clinical assessment remains key. Detection of hypomanic periods and longitudinal assessment are crucial to differentiate bipolar disorder from other conditions. Current knowledge of the evolving pharmacological and psychological strategies in bipolar disorder is of utmost importance. PMID:26388529

  17. Bipolar Disorder

    Science.gov (United States)

    ... lows). These aren't the normal periods of happiness and sadness that everyone experiences from time to ... with long-lasting medical conditions (such as asthma , diabetes , or epilepsy ), teens with bipolar disorder need to ...

  18. Bipolar disorder

    OpenAIRE

    Goodwin, Frederick K; Ghaemi, S Nassir

    1999-01-01

    Bipolar disorder's unique combination of three characteristics - clear genetic diathesis, distinctive clinical features, early availability of an effective treatment (lithium) - explains its special place in the history of psychiatry and its contribution to the current explosive growth of neuroscience. This article looks at the state of the art in bipolar disorder from the vantage point of: (i) genetics (possible linkages on chromosomes 18 and 21q, polygenic hypothesis, research into genetic ...

  19. Atomic force microscopy and atomic force acoustic microscopy characterization of photo-induced changes in some Ge-As-S amorphous films

    Czech Academy of Sciences Publication Activity Database

    Knotek, P.; Tichý, Ladislav

    2009-01-01

    Roč. 517, č. 5 (2009), s. 1837-1840. ISSN 0040-6090 Institutional research plan: CEZ:AV0Z40500505 Keywords : amorphous materials Subject RIV: CA - Inorganic Chemistry Impact factor: 1.727, year: 2009

  20. Amorphous – to – crystalline transition in Ge8Sb(2-x)BixTe11 phase – change materials for data recording

    Czech Academy of Sciences Publication Activity Database

    Svoboda, R.; Karabyn, V.; Málek, J.; Frumar, M.; Beneš, L.; Vlček, Milan

    2016-01-01

    Roč. 674, July 2016 (2016), 63-72. ISSN 0925-8388 Institutional support: RVO:61389013 Keywords : amorphous materials * calorimetry * data strorage materials Subject RIV: CA - Inorganic Chemistry Impact factor: 2.999, year: 2014

  1. On Bipolar Soft Sets

    OpenAIRE

    Shabir, Muhammad; Naz, Munazza

    2013-01-01

    We have studied the concept of bipolarity of information in the soft sets. We have defined bipolar soft sets and basic operations of union, intersection and complementation for bipolar soft sets. Examples of bipolar soft sets and an application of bipolar soft sets in a decision making problem with general algorithms have also been presented at the end.

  2. Effect of the Sn dopant on the crystallization of amorphous Ge2Sb2Te5 films induced by an excimer laser

    Science.gov (United States)

    Bai, N.; Liu, F. R.; Han, X. X.; Zhu, Z.; Liu, F.; Lin, X.; Sun, N. X.

    2015-11-01

    In this paper, the influence of Sn doping (0%, 8%, and 14%) on the crystallization of Ge2Sb2Te5 (GST) was studied with the aid of an ultraviolet laser. It was found that the addition of Sn element not only expanded the lattice parameter but also decreased the crystallization temperature and activation energy as compared to the GST. As compared to the Ge2Sb2Te5, a more complete crystallization of the Sn doping Ge2Sb2Te5 is mainly due to the lower binding energy of Sn-Te (359.8 kJ/mol), which could be more easily taken part in the bond breakage and formation than Ge-Te (456 kJ/mol) in such a short time as 30 ns. The equiaxial grains were obtained for the Sn8Ge15Sb23Te54 films when crystallization was induced by the laser fluence of 20 mJ/cm2 but the grains elongated when the laser fluence was increased to 60 mJ/cm2. The reason may be the incorporation of Sn elements changed the crystal nucleation mode.

  3. Cayley Bipolar Fuzzy Graphs

    OpenAIRE

    Alshehri, Noura O.; Muhammad Akram

    2013-01-01

    We introduce the concept of Cayley bipolar fuzzy graphs and investigate some of their properties. We present some interesting properties of bipolar fuzzy graphs in terms of algebraic structures. We also discuss connectedness in Cayley bipolar fuzzy graphs.

  4. Transtorno bipolar

    Directory of Open Access Journals (Sweden)

    Alda Martin

    1999-01-01

    Full Text Available Os resultados de estudos de famílias sugerem que o transtorno bipolar tenha uma base genética. Essa hipótese foi reforçada em estudos de adoção e de gêmeos. A herança do transtorno bipolar é complexa, envolve vários genes, além de apresentar heterogeneidade e interação entre fatores genéticos e não-genéticos. Achados, que já foram replicados, já implicaram os cromossomos 4, 12, 18 e 21, entre outros, na busca por genes de suscetibilidade. Os resultados mais promissores foram obtidos através de estudos de ligação. Por outro lado, os estudos de associação geraram dados interessantes, mas ainda vagos. Os estudos de populações de pacientes homogêneos e a melhor definição do fenótipo deverão contribuir para avanços futuros. A identificação dos genes relacionados ao transtorno bipolar irá permitir o melhor entendimento e tratamento dessa doença.

  5. A study on the crystallization behavior of Sn-doped amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} by ultraviolet laser radiation

    Energy Technology Data Exchange (ETDEWEB)

    Bai, N. [Institute of Laser Engineering, Beijing University of Technology, 100124, Beijing (China); Liu, F.R., E-mail: Liufr@bjut.edu.cn [Institute of Laser Engineering, Beijing University of Technology, 100124, Beijing (China); Han, X.X.; Zhu, Z. [Institute of Laser Engineering, Beijing University of Technology, 100124, Beijing (China); Liu, F.; Lin, X. [State Key Laboratory of Solidification Processing, Northwestern Poly technical University (China); Sun, N.X. [Electrical and Computer Engineering Department, Northeastern University, MA 02115 (United States)

    2014-10-15

    Highlights: • The Raman peaks of Sn doped GST moved towards lower wavenumbers compared to GST. • The crystallization fluence for Sn doped GST was smaller than that for pure GST. • The optical contrast increased from 15% to 40% with the addition of Sn. • Optical contrast changed little with the variation of laser fluence. - Abstract: In this paper, the influence of Sn doping (0%, 8% and 14%) on the crystallization of Ge{sub 2}Sb{sub 2}Te{sub 5} was studied with the aid of an ultraviolet laser. The XRD analyses revealed that the addition of Sn maintained the NaCl-type structure of Ge{sub 2}Sb{sub 2}Te{sub 5} after crystallization but expanded the lattice parameter due to the smaller atomic radii of Ge replaced by Sn. Raman peaks (123, 150 and 110 cm{sup −1}) moved towards lower wavenumbers (118, 137 and 104 cm{sup −1}), which can be explained by the remarkable decrease of the binding energy from Ge–Te to Sn–Te. A remarkable increase in optical contrast from 15% to 40% was observed in the Sn-doped Ge{sub 2}Sb{sub 2}Te{sub 5} film after crystallization with both the isothermal annealing and laser radiance. While the optical contrast changed little for a fixed volume fraction of Sn-doped sample with the variation of laser fluence which is attributed to the crystallization mechanism induced by laser under different fluences is the same.

  6. Neutrality in bipolar structures

    DEFF Research Database (Denmark)

    Montero, Javier; Rodríguez, J. Tinguaro; Franco, Camilo;

    2014-01-01

    In this paper, we want to stress that bipolar knowledge representation naturally allows a family of middle states which define as a consequence different kinds of bipolar structures. These bipolar structures are deeply related to the three types of bipolarity introduced by Dubois and Prade, but o...

  7. Discrete bipolar universal integrals

    OpenAIRE

    Greco, Salvatore; Mesiar, Radko; Rindone, Fabio

    2014-01-01

    The concept of universal integral, recently proposed, generalizes the Choquet, Shilkret and Sugeno integrals. Those integrals admit a discrete bipolar formulation, useful in those situations where the underlying scale is bipolar. In this paper we propose the concept of discrete bipolar universal integral, in order to provide a common framework for bipolar discrete integrals, including as special cases the discrete Choquet, Shilkret and Sugeno bipolar integrals. Moreover we provide two differe...

  8. Metastable Ge nanocrystalline in SiGe matrix for photodiode

    Energy Technology Data Exchange (ETDEWEB)

    Ouyang, Yao-Tsung; Su, Chien-Hao [Department of Chemical and Materials Engineering, National Central University, Taoyuan City 320, Taiwan (China); Chang, Jenq-Yang [Department of Optics and Photonics, National Central University, Taoyuan City 320, Taiwan (China); Cheng, Shao-Liang; Lin, Po-Chen [Department of Chemical and Materials Engineering, National Central University, Taoyuan City 320, Taiwan (China); Wu, Albert T., E-mail: atwu@ncu.edu.tw [Department of Chemical and Materials Engineering, National Central University, Taoyuan City 320, Taiwan (China)

    2015-09-15

    Highlights: • Amorphous Si{sub 1−x}Ge{sub x} films were prepared by co-sputtering by using rapid thermal annealing to form nanocrystal films. • Si–Ge alloy does not form total solid solution that is shown in phase diagram. • HRTEM images indicated that Ge atoms segregated and formed Ge clusters that are embedded in the amorphous Si–Ge matrix. • Ge segregation permitted high mobility; the grain size increased and the resistivity decreased with higher Ge content. • The rectifying property became stronger with the Ge fraction in the Si{sub 1−x}Ge{sub x} diodes. Si{sub 1−x}Ge{sub x} diodes are used as photodetectors, which provide a greater output current under illumination. - Abstract: Amorphous Si{sub 1−x}Ge{sub x} films were prepared by co-sputtering on an oxidized Si wafer, followed by rapid thermal annealing to form nanocrystal films. The formation of Ge nanocrystals was not at thermodynamic equilibrium formed in the amorphous Si{sub 1−x}Ge{sub x} matrix. High-resolution transmission electron microscopy was used to characterize the increase in the size of the grains in the Ge nanocrystals as the Ge content increased. The Ge nanocrystals have a greater absorption in the near-infrared region and higher carrier mobility than SiGe crystals, and the variation in their grain sizes can be used to tune the bandgap. This characteristic was exploited herein to fabricate n-Si{sub 1−x}Ge{sub x}/p-Si{sub 1−x}Ge{sub x} p–n diodes on insulating substrates, which were then examined by analyzing their current–voltage characteristics. The rectifying property became stronger as the fraction of Ge in the Si{sub 1−x}Ge{sub x} films increased. The Si{sub 1−x}Ge{sub x} diodes are utilized as photodetectors that have a large output current under illumination. This paper elucidates the correlations between the structural, optical and electrical properties and the p–n junction performance of the film.

  9. Generalized bipolar product and sum

    OpenAIRE

    Greco, Salvatore; Mesiar, Radko; Rindone, Fabio

    2016-01-01

    Aggregation functions on [0, 1] with annihilator 0 can be seen as a generalized product on [0, 1]. We study the generalized product on the bipolar scale [−1, 1], stressing the axiomatic point of view ( compare also [9]). Based on newly introduced bipolar properties, such as the bipolar increasingness, bipolar unit element, bipolar idempotent element, several kinds of generalized bipolar product are introduced and studied. A special stress is put on bipolar semicopulas, bipolar quasi-copulas a...

  10. Help With Bipolar Disorders

    Science.gov (United States)

    ... a Psychiatrist Patients & Families All Topics Help With Bipolar Disorders Curated and updated for the community by APA Topic Information Bipolar disorders are brain disorders that cause changes in a ...

  11. Staging Bipolar Disorder.

    OpenAIRE

    Vieta i Pascual, Eduard, 1963-; Reinares, M.; Rosa, A. R.

    2011-01-01

    The purpose of this study was to analyze the evidence supporting a staging model for bipolar disorder. The authors conducted an extensive Medline and Pubmed search of the published literature using a variety of search terms (staging, bipolar disorder, early intervention) to find relevant articles, which were reviewed in detail. Only recently specific proposals have been made to apply clinical staging to bipolar disorder. The staging model in bipolar disorder suggests a progression from prodro...

  12. Cytokines in bipolar disorder

    DEFF Research Database (Denmark)

    Munkholm, Klaus; Vinberg, Maj; Vedel Kessing, Lars

    2012-01-01

    BACKGROUND: Current research and hypothesis regarding the pathophysiology of bipolar disorder suggests the involvement of immune system dysfunction that is possibly related to disease activity. Our objective was to systematically review evidence of cytokine alterations in bipolar disorder according...... to affective state. METHODS: We conducted a systemtic review of studies measuring endogenous cytokine concentrations in patients with bipolar disorder and a meta-analysis, reporting results according to the PRISMA statement. RESULTS: Thirteen studies were included, comprising 556 bipolar disorder...

  13. Management of Bipolar Depression

    OpenAIRE

    Jae Seung Chang; Kyooseob Ha

    2011-01-01

    Patients with bipolar disorder spend more time in a depressed than manic state, even with individualized treatment. To date, bipolar depression is often misdiagnosed and ineffectively managed both for acute episodes and residual symptoms. This review attempts to summarize the current status of available treatment strategies in the treatment of bipolar depression. For acute and prophylactic treatment, a substantial body of evidence supports the antidepressive efficacy of lithium for bipolar di...

  14. Bipolar Fuzzy Integrals

    OpenAIRE

    Greco, Salvatore; Rindone, Fabio

    2012-01-01

    In decision analysis and especially in multiple criteria decision analysis, several non additive integrals have been introduced in the last sixty years. Among them, we remember the Choquet integral, the Shilkret integral and the Sugeno integral. Recently, the bipolar Choquet integral has been proposed for the case in which the underlying scale is bipolar. In this paper we propose the bipolar Shilkret integral and the bipolar Sugeno integral. Moreover, we provide an axiomatic characterization ...

  15. Irregular Bipolar Fuzzy Graphs

    OpenAIRE

    Samanta, Sovan; Pal, Madhumangal

    2012-01-01

    In this paper, we define irregular bipolar fuzzy graphs and its various classifications. Size of regular bipolar fuzzy graphs is derived. The relation between highly and neighbourly irregular bipolar fuzzy graphs are established. Some basic theorems related to the stated graphs have also been presented.

  16. Costs of Bipolar Disorder

    OpenAIRE

    Leah S. Kleinman; Ana Lowin; Emuella Flood; Gian Gandhi; Eric Edgell; Revicki, Dennis A

    2003-01-01

    Bipolar disorder is a chronic affective disorder that causes significant economic burden to patients, families and society. It has a lifetime prevalence of approximately 1.3%. Bipolar disorder is characterised by recurrent mania or hypomania and depressive episodes that cause impairments in functioning and health-related quality of life. Patients require acute and maintenance therapy delivered via inpatient and outpatient treatment. Patients with bipolar disorder often have contact with the s...

  17. Treatment Resistant Bipolar Disorder

    OpenAIRE

    Elvan Ozalp; Ersin Hatice Karslioglu

    2015-01-01

    Many patients diagnosed with bipolar disorder respond incompletely or unsatisfactorily to available treatments. Defining refractoriness in bipolar disorder is a complex issue and should concern and include either every phase and pole or the disorder as a whole. There are only limited and sometimes confusing data on the treatment of refractory bipolar patients. The objective of this paper was to review the evidence for treatment options in treatment resistant patients on depressive, manic atta...

  18. Bipolar Affective Disorder and Migraine

    OpenAIRE

    Birk Engmann

    2012-01-01

    This paper consists of a case history and an overview of the relationship, aetiology, and treatment of comorbid bipolar disorder migraine patients. A MEDLINE literature search was used. Terms for the search were bipolar disorder bipolar depression, mania, migraine, mood stabilizer. Bipolar disorder and migraine cooccur at a relatively high rate. Bipolar II patients seem to have a higher risk of comorbid migraine than bipolar I patients have. The literature on the common roots of migraine and ...

  19. Properties of Bipolar Fuzzy Hypergraphs

    OpenAIRE

    Akram, M.; Dudek, W. A.; Sarwar, S.

    2013-01-01

    In this article, we apply the concept of bipolar fuzzy sets to hypergraphs and investigate some properties of bipolar fuzzy hypergraphs. We introduce the notion of $A-$ tempered bipolar fuzzy hypergraphs and present some of their properties. We also present application examples of bipolar fuzzy hypergraphs.

  20. Neuroinflammation in bipolar disorders

    Directory of Open Access Journals (Sweden)

    Georgios D Kotzalidis

    2015-01-01

    Full Text Available Recent literature based on peripheral immunity findings speculated that neuroinflammation, with its connection to microglial activation, is linked to bipolar disorder. The endorsement of the neuroinflammatory hypotheses of bipolar disorder requires the demonstration of causality, which requires longitudinal studies. We aimed to review the evidence for neuroinflammation as a pathogenic mechanism of the bipolar disorder. We carried out a hyper inclusive PubMed search using all appropriate neuroinflammation-related terms and crossed them with bipolar disorder-related terms. The search produced 310 articles and the number rose to 350 after adding articles from other search engines and reference lists. Twenty papers were included that appropriately tackled the issue of the presence (but not of its pathophysiological role of neuroinflammation in bipolar disorder. Of these, 15 were postmortem and 5 were carried out in living humans. Most articles were consistent with the presence of neuroinflammation in bipolar disorder, but factors such as treatment may mask it. All studies were cross-sectional, preventing causality to be inferred. Thus, no inference can be currently made about the role of neuroinflammation in bipolar disorder, but a link is likely. The issue remains little investigated, despite an excess of reviews on this topic.

  1. Types of Bipolar Disorder

    Science.gov (United States)

    ... improve the lives of people who have mood disorders. The Power of Peers DBSA envisions wellness for people who live with depression and bipolar disorder. Because DBSA was created for and is led ...

  2. Bipolar membrane characterization

    Czech Academy of Sciences Publication Activity Database

    Richau, K.; Kůdela, Vlastimil

    Enschede : Twente University Press, 2001 - (Kemperman, A.), s. 112-147 ISBN 903651523 R&D Projects: GA MŠk ME 079 Keywords : bipolar membranes * water dissociation * methods for characterisation Subject RIV: CD - Macromolecular Chemistry

  3. Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films

    Science.gov (United States)

    Bouška, M.; Pechev, S.; Simon, Q.; Boidin, R.; Nazabal, V.; Gutwirth, J.; Baudet, E.; Němec, P.

    2016-01-01

    Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers. PMID:27199107

  4. Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films.

    Science.gov (United States)

    Bouška, M; Pechev, S; Simon, Q; Boidin, R; Nazabal, V; Gutwirth, J; Baudet, E; Němec, P

    2016-01-01

    Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers. PMID:27199107

  5. Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films

    Science.gov (United States)

    Bouška, M.; Pechev, S.; Simon, Q.; Boidin, R.; Nazabal, V.; Gutwirth, J.; Baudet, E.; Němec, P.

    2016-05-01

    Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers.

  6. Bipolar Affective Disorder and Migraine

    Directory of Open Access Journals (Sweden)

    Birk Engmann

    2012-01-01

    Full Text Available This paper consists of a case history and an overview of the relationship, aetiology, and treatment of comorbid bipolar disorder migraine patients. A MEDLINE literature search was used. Terms for the search were bipolar disorder bipolar depression, mania, migraine, mood stabilizer. Bipolar disorder and migraine cooccur at a relatively high rate. Bipolar II patients seem to have a higher risk of comorbid migraine than bipolar I patients have. The literature on the common roots of migraine and bipolar disorder, including both genetic and neuropathological approaches, is broadly discussed. Moreover, bipolar disorder and migraine are often combined with a variety of other affective disorders, and, furthermore, behavioural factors also play a role in the origin and course of the diseases. Approach to treatment options is also difficult. Several papers point out possible remedies, for example, valproate, topiramate, which acts on both diseases, but no first-choice treatments have been agreed upon yet.

  7. Lightweight bipolar storage battery

    Science.gov (United States)

    Rowlette, John J. (Inventor)

    1992-01-01

    An apparatus [10] is disclosed for a lightweight bipolar battery of the end-plate cell stack design. Current flow through a bipolar cell stack [12] is collected by a pair of copper end-plates [16a,16b] and transferred edgewise out of the battery by a pair of lightweight, low resistance copper terminals [28a,28b]. The copper terminals parallel the surface of a corresponding copper end-plate [16a,16b] to maximize battery throughput. The bipolar cell stack [12], copper end-plates [16a,16b] and copper terminals [28a,28b] are rigidly sandwiched between a pair of nonconductive rigid end-plates [20] having a lightweight fiber honeycomb core which eliminates distortion of individual plates within the bipolar cell stack due to internal pressures. Insulating foam [30] is injected into the fiber honeycomb core to reduce heat transfer into and out of the bipolar cell stack and to maintain uniform cell performance. A sealed battery enclosure [ 22] exposes a pair of terminal ends [26a,26b] for connection with an external circuit.

  8. Low-temperature crystallization of amorphous silicon and amorphous germanium by soft X-ray irradiation

    International Nuclear Information System (INIS)

    The low-temperature-crystallization effects of soft X-ray irradiation on the structural properties of amorphous Si and amorphous Ge films were investigated. From the differences in crystallization between Si and Ge, it was found that the effects of soft X-ray irradiation on the crystallization strongly depended on the energy band gap and energy level. The crystallization temperatures of the amorphous Si and amorphous Ge films decreased from 953 K to 853 K and 773 K to 663 K, respectively. The decrease in crystallization temperature was also related to atoms transitioning into a quasi-nucleic phase in the films. The ratio of electron excitation and migration effects to thermal effects was controlled using the storage-ring current (photon flux density). Therefore, we believe that low-temperature crystallization can be realized by controlling atomic migration through electron excitation. - Highlights: • This work investigates the crystallization mechanism for soft X-ray irradiation. • The soft X-ray crystallization depended on the energy band gap and energy level. • The decrease in the crystallization temperature for Si and Ge films was 100 K. • This decrement was related to atoms transitioning into a quasi-nucleic phase

  9. Bipolar battery construction

    Science.gov (United States)

    Rippel, Wally E. (Inventor); Edwards, Dean B. (Inventor)

    1981-01-01

    A lightweight, bipolar battery construction for lead acid batteries in which a plurality of thin, rigid, biplates each comprise a graphite fiber thermoplastic composition in conductive relation to lead stripes plated on opposite flat surfaces of the plates, and wherein a plurality of nonconductive thermoplastic separator plates support resilient yieldable porous glass mats in which active material is carried, the biplates and separator plates with active material being contained and maintained in stacked assembly by axial compression of the stacked assembly. A method of assembling such a bipolar battery construction.

  10. The bipolar universal integral

    Czech Academy of Sciences Publication Activity Database

    Greco, S.; Mesiar, Radko; Rindone, F.

    Heidelberg: Springer, 2012 - (Greco, S.; Bouchon-Meunier, B.; Coletti, G.; Fedrizzi, M.; Matarazzo, B.; Yager, R.), s. 360-369. (Communications in Computer and Information Science. 299). ISBN 978-3-642-31717-0. ISSN 1865-0929. [IPMU 2012 /14./. Catania (IT), 09.07.2012-13.07.2012] R&D Projects: GA ČR GAP402/11/0378 Institutional support: RVO:67985556 Keywords : bipolar integral * Choquet integral * universal integral Subject RIV: BA - General Mathematics http://library.utia.cas.cz/separaty/2012/E/mesiar-the%20bipolar%20universal%20integral.pdf

  11. Amorphous Computing

    Science.gov (United States)

    Sussman, Gerald

    2002-03-01

    agents constructed by engineered cells, but we have few ideas for programming them effectively: How can one engineer prespecified, coherent behavior from the cooperation of immense numbers of unreliable parts that are interconnected in unknown, irregular, and time-varying ways? This is the challenge of Amorphous Computing.

  12. Bipolar Disorder in Turkey

    Directory of Open Access Journals (Sweden)

    Bulent Kadri Gultekin

    2014-06-01

    Full Text Available Assessment of studies related with bipolar disorder in Turkey did not reveal an epidemiologically qualified field study. Most of the studies are hospital based or clinical studies which did not include a systematical scanning and did not aim to collect any epidemiological data and transfer information to health authorities. The generalizability of these studies to our community is far from being valid and reliable. On the other hand, a profile which will be created by reviewing the findings of these studies performed in various regions of Turkey will have a contribution to knowing the and ldquo;unique to us and rdquo; features of bipolar disorder and determining cultural risk factors. All this information can constitute a basis for formation and development of public mental health services related with bipolar disorder. In Turkey, the need for epidemiologically significant, polycentric, public sampled studies with broad participation is indispensable. Although our psychiatric epidemiology and clinical studies include necessary scientific basis, they are not powerful enough to evaluate the authentic and progressional relations such as rapid urbanization and immigration. The aim of this review is to evaluate and discuss prominent epidemiological findings, deficiencies and possibile future activities related with studies conducted in Turkey about bipolar disorder.. [Psikiyatride Guncel Yaklasimlar - Current Approaches in Psychiatry 2014; 6(2.000: 199-209

  13. Discrete bipolar universal integrals

    Czech Academy of Sciences Publication Activity Database

    Greco, S.; Mesiar, Radko; Rindone, F.

    2014-01-01

    Roč. 252, č. 1 (2014), s. 55-65. ISSN 0165-0114 R&D Projects: GA ČR GAP402/11/0378 Institutional support: RVO:67985556 Keywords : bipolar integral * universal integral * Choquet integral Subject RIV: BA - General Mathematics Impact factor: 1.986, year: 2014 http://library.utia.cas.cz/separaty/2014/E/mesiar-0432224.pdf

  14. YINYANG BIPOLAR LATTICES AND L-SETS FOR BIPOLAR KNOWLEDGE FUSION, VISUALIZATION, AND DECISION

    OpenAIRE

    WEN-RAN ZHANG

    2005-01-01

    YinYang bipolar sets, bipolar lattice, bipolar L-crisp sets, and Bipolar L-fuzzy sets are presented for bipolar information/knowledge fusion, visualization, and decision. First, a bipolar lattice B is defined as a 4-tuple (B, ⊕, &, ⊗) in which every pair of elements has a bipolar lub (blub ⊕), a bipolar glb (bglb &), and a cross-pole glb (cglb ⊗). A bipolar L-set (crisp or fuzzy) B = (B-, B+) in X to a bipolar lattice BL is defined as a bipolar equilibrium function or mapping B : X ⇒ BL. A st...

  15. Electron conductivity in GeTe and GeSe upon ion implantation of Bi

    Energy Technology Data Exchange (ETDEWEB)

    Fedorenko, Ya. G., E-mail: janina.fedorenko@gmail.com [University of Surrey, Advanced Technology Institute, Department of Electronic Engineering (United Kingdom)

    2015-12-15

    This paper presents results on ion implantation of bismuth in GeTe and GeSe films. The conductivity and the thermopower of amorphous chalcogenide films are investigated. Electron conductivity in the films is attained at the Bi implantation doses higher than (1.5–2) × 10{sup 16} cm{sup −2}. In conjunction with the structural modification in the films as revealed Raman spectroscopy, the results suggest the structural re-arrangement of the amorphous network occurs via weakening the bonds of a lower energy. The onset of electron conductivity is hindered by a stronger bond in an alloy. In GeTe, this is the Ge-Ge bond.

  16. Structure and low temperature thermal relaxation of amorphized germanium

    International Nuclear Information System (INIS)

    The structure of implantation-induced damage in amorphized Ge has been investigated using high resolution extended x-ray absorption fine structure spectroscopy (EXAFS). EXAFS data analysis was performed with the Cumulant Method, allowing a full reconstruction of the interatomic distance distribution (RDF). For the case of MeV implantation at -196 deg C, for an ion-dose range extending two orders of magnitude beyond that required for amorphization, a dose-dependent asymmetric RDF was determined for the amorphous phase including an increase in bond-length as a function of ion dose. Low-temperature thermal annealing resulted in structural relaxation of the amorphous phase as evidenced by a reduction in the centroid, asymmetry and width of the RDF. Such an effect was attributed to the formation (and subsequent annihilation) of three- and five-fold Co-ordinated atoms, comparing favourably to theoretical simulations of the structure of a-Ge

  17. BIPOLAR DISORDER IN ADULTS

    Directory of Open Access Journals (Sweden)

    Yadav Jaya

    2013-06-01

    Full Text Available Bipolar disorder is a chronic illness, which may require life-long treatment. Patients will spend 3-5 times more days in the depressed episode then in the manic phase. Due to this variability in episodes, polypharmacy is used quite frequently in practice, though the evidence to do this remains quite limited. Many positive and negative outcomes can occur from this practice. Bipolar disorder is the 6th leading cause of disability in the developed world among those between the ages 15 and 44 years age groups. Serotonin is one of the neurotransmitter in the brain, and one of that strongly affects the person mood. Clozapine (clozaril, olanzapine (zyperexa, risperidone (Risperdal, and ziprasidone (zeldox and the clozapine may be helpful as mood stabilizer for people who do not respond to lithium and anticonvulsant.

  18. Life expectancy in bipolar disorder

    DEFF Research Database (Denmark)

    Kessing, Lars Vedel; Vradi, Eleni; Andersen, Per Kragh

    2015-01-01

    OBJECTIVE: Life expectancy in patients with bipolar disorder has been reported to be decreased by 11 to 20 years. These calculations are based on data for individuals at the age of 15 years. However, this may be misleading for patients with bipolar disorder in general as most patients have a later...... onset of illness. The aim of the present study was to calculate the remaining life expectancy for patients of different ages with a diagnosis of bipolar disorder. METHODS: Using nationwide registers of all inpatient and outpatient contacts to all psychiatric hospitals in Denmark from 1970 to 2012 we...... remaining life expectancy in bipolar disorder and that of the general population decreased with age, indicating that patients with bipolar disorder start losing life-years during early and mid-adulthood. CONCLUSIONS: Life expectancy in bipolar disorder is decreased substantially, but less so than previously...

  19. Bipolar Disorder and Cancer

    OpenAIRE

    Sermin Kesebir; Arzu Bayrak

    2012-01-01

    Prevalence studies and studies on causation relations have shown that the relation between psychiatric disorders and chronic physical diseases is neglected. For heterogeneous diseases an increasing number of susceptibility variants are being defined. Alzheimer disease, bipolar disorder, breast and prostate cancer, coronary artery disease, Chron's disease, systemic lupus eritematosus, type 1 and type 2 diabetes mellitus are mentioned together with epigenetic concept. In acrocentric zone of chr...

  20. Treatment of bipolar disorder

    OpenAIRE

    Geddes, John R.; Miklowitz, David J.

    2013-01-01

    We review recent developments in the acute and long-term treatment of bipolar disorder and identify promising future routes to therapeutic innovation. Overall, advances in drug treatment remain quite modest. Antipsychotic drugs are effective in the acute treatment of mania; their efficacy in the treatment of depression is variable with the clearest evidence for quetiapine. Despite their widespread use, considerable uncertainty and controversy remains about the use of antidepressant drugs in t...

  1. Bipolar Disorder in Children and Teens

    Science.gov (United States)

    ... is in crisis. What do I do? Share Bipolar Disorder in Children and Teens Download PDF Download ePub ... brochure will give you more information. What is bipolar disorder? Bipolar disorder is a serious brain illness. It ...

  2. Prophylactic treatment in bipolar disorder

    OpenAIRE

    Eroğlu, Meliha Zengin; Özpoyraz, Nurgül; Tamam, Lut

    2014-01-01

    Objective: The aim of this study was to determine the prophylactic treatment response and its relationship between clinical variables among the bipolar disorder patient group followed up in the Bipolar Disorder Unit of Psychiatry Department of Cukurova University Faculty of Medicine. Methods: One hundred patients, in euthymic period, diagnosed as bipolar disorder, were included in this study. “Affective Disorders Patient Registry Form” developed by our unit, SCID-I, Young Mani Rating Scale...

  3. Mathematical models of bipolar disorder

    OpenAIRE

    Daugherty, D; Roque-Urrea, T; Urrea-Roque, J; DE TROYER, J; Wirkus, S; Porter, M. A.

    2009-01-01

    We use limit cycle oscillators to model bipolar II disorder, which is characterized by alternating hypomanic and depressive episodes and afflicts about 1% of the United States adult population. We consider two non-linear oscillator models of a single bipolar patient. In both frameworks, we begin with an untreated individual and examine the mathematical effects and resulting biological consequences of treatment. We also briefly consider the dynamics of interacting bipolar II individuals using ...

  4. The Genetics of Bipolar Disorder

    OpenAIRE

    Jennifer H Barnett; Smoller, Jordan W.

    2009-01-01

    Bipolar disorder is a mood disorder characterized by impairing episodes of mania and depression. Twin studies have established that bipolar disorder is among the most heritable of medical disorders and efforts to identify specific susceptibility genes have intensified over the past two decades. The search for genes influencing bipolar disorder has been complicated by a paucity of animal models, limited understanding of pathogenesis, and the genetic and phenotypic complexity of the syndrome. L...

  5. Mathematical Models of Bipolar Disorder

    OpenAIRE

    Daugherty, Darryl; Roque-Urrea, Tairi; Urrea-Roque, John; Snyder, Jessica; Wirkus, Stephen; Mason A. Porter

    2003-01-01

    We use limit cycle oscillators to model Bipolar II disorder, which is characterized by alternating hypomanic and depressive episodes and afflicts about one percent of the United States adult population. We consider two nonlinear oscillator models of a single bipolar patient. In both frameworks, we begin with an untreated individual and examine the mathematical effects and resulting biological consequences of treatment. We also briefly consider the dynamics of interacting bipolar II individual...

  6. Childhood trauma in bipolar disorder

    OpenAIRE

    Watson, S; Gallagher, P.; Dougall, D.; R Porter; Moncrieff, J.; Ferrier, I. N.; Young, A. H.

    2014-01-01

    Objective: There has been little investigation of early trauma in bipolar disorder despite evidence that stress impacts on the course of this illness. We aimed to compare the rates of childhood trauma in adults with bipolar disorder to a healthy control group, and to investigate the impact of childhood trauma on the clinical course of bipolar disorder. Methods: Retrospective assessment of childhood trauma was conducted using the Childhood Trauma Questionnaire (CTQ) in 60 outpatients with bipo...

  7. Scientific attitudes towards bipolar disorders

    OpenAIRE

    Mohammad-Hossein Biglu; Sahar Biglu

    2014-01-01

    Introduction: Bipolar disorder is a psychiatric condition that is also called manic-depressive disease. It causes unusual changes in mood, energy, activity levels, and the ability to carry out day-to-day tasks. In the present study, 3 sets of data were considered and analyzed: first, all papers categorized under Bipolar Disorders in Science Citation Index Expanded (SCI-E) database through 2001-2011; second, papers published by the international journal of Bipolar Disorders indexed in SCI-E d...

  8. Pediatrik Bipolar Bozuklukta Epidemiyoloji

    OpenAIRE

    Caner Mutlu; Neslim Guvendeger Doksat; Ayten Erdogan

    2015-01-01

    Çocuk ve ergenlerde bipolar bozukluk tanısı giderek artış göstermektedir. Çocuk ve ergen popülasyonunda intihar girişiminde bulunanların önemli bir oranının bipolar bozukluğu olanlarda ortaya çıkıyor olması, bu hastalığın tanı ve tedavisini daha da önemli kılmaktadır. Özellikle ergenlik dönemi öncesi örneklemlerde açık tanı ölçütlerinin olmaması ve değerlendirmelerin belirtilere dayanılarak yapılmasından dolayı yanlış biçimde bipolar bozukluk tanısı konduğu ve yaygınlık oranlarının oldu-ğunda...

  9. Mechanism of Germanium-Induced Perimeter Crystallization of Amorphous Silicon

    OpenAIRE

    Hakim, M. M. A.; Ashburn, P.

    2007-01-01

    We report a study aimed at highlighting the mechanism of a new amorphous silicon crystallization phenomenon that originates from the perimeter of a germanium layer during low-temperature annealing (500°C). Results are reported on doped and undoped amorphous silicon films, with thicknesses in the range 40–200 nm, annealed at a temperature of 500 or 550°C. A comparison is made of crystallization arising from Ge and SiGe layers and the role of damage from a high-dose fluorine implant is investig...

  10. Bipolar Disorder and Diabetes Mellitus

    Directory of Open Access Journals (Sweden)

    Sermin Kesebir

    2010-04-01

    Full Text Available Comorbid endocrine and cardiovascular situations with bipolar disorder usually result from the bipolar disorder itself or as a consequence of its treatment. With habits and lifestyle, genetic tendency and side effects, this situation is becoming more striking. Subpopulations of bipolar disorders patients should be considered at high risk for diabetes mellitus. The prevalence of diabetes mellitus in bipolar disorder may be three times greater than in the general population. Comorbidity of diabetes causes a pathophysiological overlapping in the neurobiological webs of bipolar cases. Signal mechanisms of glycocorticoid/insulin and immunoinflammatory effector systems are junction points that point out the pathophysiology between bipolar disorder and general medical cases susceptible to stress. Glycogen synthetase kinase (GSK-3 is a serine/treonine kinase and inhibits the transport of glucose stimulated by insulin. It is affected in diabetes, cancer, inflammation, Alzheimer disease and bipolar disorder. Hypoglycemic effect of lithium occurs via inhibiting glycogen synthetase kinase. When comorbid with diabetes, the other disease -for example bipolar disorder, especially during its acute manic episodes-, causes a serious situation that presents its influences for a lifetime. Choosing pharmacological treatment and treatment adherence are another important interrelated areas. The aim of this article is to discuss and review the etiological, clinical and therapeutic properties of diabetes mellitus and bipolar disorder comorbidity.

  11. Phase transformation in nanocrystalline α-quartz GeO2 up to 51.5 GPa

    International Nuclear Information System (INIS)

    The high-pressure behaviour of nanocrystalline α-quartz GeO2 (q-GeO2) with average crystallite sizes of 40 and 260 nm has been studied by in situ high-pressure synchrotron radiation x-ray diffraction measurements up to about 51.5 GPa at ambient temperature. Two phase transformations, q-GeO2 to amorphous GeO2 and amorphous GeO2 to monoclinic GeO2, are detected. The onset and end of the transition pressures for the q-GeO2-to-amorphous GeO2 phase transition are found to be approximately 10.8 and 14.9 GPa for the 40 nm q-GeO2 sample, and 9.5 and 12.4 GPa for the 260 nm q-GeO2 sample, respectively. The mixture of amorphous and monoclinic GeO2 phases remains up to 51.5 GPa during compression and even after pressure release. This result strongly suggests that the difference of free energy between the amorphous phase and the monoclinic phase might be small. Consequently, defects in the starting material, which alter the free energies of the amorphous phase and the monoclinic phase, may play a key role for the phase transformation of q-GeO2

  12. [Antipsychotics in bipolar disorders].

    Science.gov (United States)

    Vacheron-Trystram, M-N; Braitman, A; Cheref, S; Auffray, L

    2004-01-01

    This article is a review of the various treatments that are currently available, in particular in France, for the treatment of bipolar disorders. This article specifically addresses the use of novel antipsychotic agents as alternative therapy to a lithium therapy and/or the use of conventional antipsychotics. The prevalence of bipolar disorder over a lifetime is around 1% of the general population. Bipolar disorder consists of alternating depressive and manic episodes. It mainly affects younger subjects, and is often associated with alcohol and drug addictions. There are two main subtypes of bipolar disorder. According to the DSM IV-R, type 1 of bipolar disorder is characterised when at least one manic episode (or a mixed episode) has been diagnosed. Type 2 of bipolar disorder is related to patients enduring recurrent depressive episodes but no manic episode. Type 2 affects women more frequently as opposed to type 1 affecting individuals of both sexes. Manic-depressive disorder (or cyclo-thymic disorder) appears in relation to patients who has never suffered manic episode, mixed episode or severe depressive episode but have undergone numerous periods with some symptoms of depression and hypomanic symptoms over a two-year period during which any asymptomatic periods last no longer than two months. The average age of the person going through a first episode (often a depressive one) is 20 years-old. Untreated bipolar patients may endure more than ten manic or depressive episodes. Finally, in relation to 10 to 20% of patients, the bipolar disorder will turn into a fast cycle form, either spontaneously or as a result of certain medical treatments. Psychiatrists are now able to initiate various treating strategies which are most likely to be effective as a result of the identification of clinical subtypes of the bipolar disorder. Lithium therapy has been effectively and acutely used for patients with pure or elated mania and its prophylaxis. However, lithium medication

  13. Silicon-germanium Single-heterojunction Bipolar Transistor

    Directory of Open Access Journals (Sweden)

    G.M. Khanduri

    2006-04-01

    Full Text Available The cutoff frequency performance of an NPN Si/SiGe/SiGe single-heterojunction bipolartransistor (SiGe SHBT at high collector current densities has been analysed using a 2-D MEDICIdevice simulator. A conventional NPN Si/SiGe/Si double-heterojunction bipolar transistor(SiGe DHBT having uniform 20 atomic per cent of germanium in the base region has beeninvestigated for comparison. The analysis shows the formation of a retarding potential barrierfor minority carrier electrons at the base-collector heterojunction of the DHBT structure. Whereas,the base-collector homojunction of the SiGe SHBT structure, having a uniform 15 atomic percent of germanium profile in its base and collector, inhibits the formation of such a retardingpotential barrier, the SHBT structure with a base-collector homojunction shows an improvedcutoff frequency at high collector current density in comparison with conventional SiGe DHBT,which makes it more promising for high speed, scaled down, field-specific applications.

  14. Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation

    OpenAIRE

    Fedorenko, Yanina G.; Hughes, Mark A.; Colaux, Julien L.; Jeynes, C.; Gwilliam, Russell M.; Homewood, Kevin P.; Yao, Jin; Hewak, Dan W.; Lee, Tae-Hoon; Elliott, Stephen R; Gholipour, B.; Curry, Richard J.

    2014-01-01

    Doping of amorphous chalcogenide films of rather dissimilar bonding type and resistivity, namely, Ga-La-S, GeTe, and Ge-Sb-Te by means of ion implantation of bismuth is considered. To characterize defects induced by ion-beam implantation space-charge-limited conduction and capacitance-voltage characteristics of amorphous chalcogenide/silicon heterojunctions are investigated. It is shown that ion implantation introduces substantial defect densities in the films and their interfaces with silico...

  15. Genetics of bipolar disorder

    Directory of Open Access Journals (Sweden)

    Kerner B

    2014-02-01

    Full Text Available Berit Kerner Semel Institute for Neuroscience and Human Behavior, University of California, Los Angeles, Los Angeles, CA, USA Abstract: Bipolar disorder is a common, complex genetic disorder, but the mode of transmission remains to be discovered. Many researchers assume that common genomic variants carry some risk for manifesting the disease. The research community has celebrated the first genome-wide significant associations between common single nucleotide polymorphisms (SNPs and bipolar disorder. Currently, attempts are under way to translate these findings into clinical practice, genetic counseling, and predictive testing. However, some experts remain cautious. After all, common variants explain only a very small percentage of the genetic risk, and functional consequences of the discovered SNPs are inconclusive. Furthermore, the associated SNPs are not disease specific, and the majority of individuals with a “risk” allele are healthy. On the other hand, population-based genome-wide studies in psychiatric disorders have rediscovered rare structural variants and mutations in genes, which were previously known to cause genetic syndromes and monogenic Mendelian disorders. In many Mendelian syndromes, psychiatric symptoms are prevalent. Although these conditions do not fit the classic description of any specific psychiatric disorder, they often show nonspecific psychiatric symptoms that cross diagnostic boundaries, including intellectual disability, behavioral abnormalities, mood disorders, anxiety disorders, attention deficit, impulse control deficit, and psychosis. Although testing for chromosomal disorders and monogenic Mendelian disorders is well established, testing for common variants is still controversial. The standard concept of genetic testing includes at least three broad criteria that need to be fulfilled before new genetic tests should be introduced: analytical validity, clinical validity, and clinical utility. These criteria are

  16. Scientific attitudes towards bipolar disorders

    Directory of Open Access Journals (Sweden)

    Mohammad-Hossein Biglu

    2014-02-01

    Full Text Available Introduction: Bipolar disorder is a psychiatric condition that is also called manic-depressive disease. It causes unusual changes in mood, energy, activity levels, and the ability to carry out day-to-day tasks. In the present study, 3 sets of data were considered and analyzed: first, all papers categorized under Bipolar Disorders in Science Citation Index Expanded (SCI-E database through 2001-2011; second, papers published by the international journal of Bipolar Disorders indexed in SCI-E during a period of 11 years; and third, all papers distributed by the international journal of Bipolar Disorders indexed in MEDLINE during the period of study. Methods: The SCI-E database was used to extract all papers indexed with the topic of Bipolar Disorders as well as all papers published by The International Journal of Bipolar Disorders. Extraction of data from MEDLINE was restricted to the journals name from setting menu. The Science of Science Tool was used to map the co-authorship network of papers published by The International Journal of Bipolar Disorders through 2009-2011. Results: Analysis of data showed that the majority of publications in the subject area of bipolar disorders indexed in SCI-E were published by The International Journal of Bipolar Disorders. Although journal articles consisted of 59% of the total publication type in SCI-E, 65% of publications distributed by The Journal of Bipolar Disorders were in the form of meetingabstracts. Journal articles consisted of only 23% of the total publications. USA was the leading country regarding sharing data in the field of bipolar disorders followed by England, Canada, and Germany. Conclusion: The editorial policy of The International Journal of Bipolar Disorders has been focused on new themes and new ways of researching in the subject area of bipolar disorder. Regarding the selection of papers for indexing, the SCI-E database selects data more comprehensively than MEDLINE. The number of papers

  17. Tobacco Use in Bipolar Disorder

    Science.gov (United States)

    Thomson, Daniel; Berk, Michael; Dodd, Seetal; Rapado-Castro, Marta; Quirk, Shae E.; Ellegaard, Pernille K.; Berk, Lesley; Dean, Olivia M.

    2015-01-01

    Tobacco use in mental health in general and bipolar disorder in particular remains disproportionally common, despite declining smoking rates in the community. Furthermore, interactions between tobacco use and mental health have been shown, indicating the outcomes for those with mental health disorders are impacted by tobacco use. Factors need to be explored and addressed to improve outcomes for those with these disorders and target specific interventions for people with psychiatric illness to cease tobacco smoking. In the context of bipolar disorder, this review explores; the effects of tobacco smoking on symptoms, quality of life, suicidal behaviour, the biological interactions between tobacco use and bipolar disorder, the interactions between tobacco smoking and psychiatric medications, rates and factors surrounding tobacco smoking cessation in bipolar disorder and suggests potential directions for research and clinical translation. The importance of this review is to bring together the current understanding of tobacco use in bipolar disorder to highlight the need for specific intervention. PMID:25912533

  18. Bipolar Disorder and Childhood Trauma

    Directory of Open Access Journals (Sweden)

    Evrim Erten

    2015-06-01

    Full Text Available Bipolar disorder is a chronic disorder in which irregular course of depressive, mania or mixed episodes or a complete recovery between episodes can be observed. The studies about the effects of traumatic events on bipolar disorder showed that they had significant and long-term effects on the symptoms of the disorder. Psychosocial stress might change the neurobiology of bipolar disorder over time. The studies revealed that the traumatic events could influence not only the onset of the disorder but also the course of the disorder and in these patients the rate of suicide attempt and comorbid substance abuse might increase. Bipolar patients who had childhood trauma had an earlier onset, higher number of episodes and comorbid disorders. In this review, the relationship between childhood trauma and bipolar disorder is reviewed. [Psikiyatride Guncel Yaklasimlar - Current Approaches in Psychiatry 2015; 7(2: 157-165

  19. Corrosion resistant amorphous alloys

    International Nuclear Information System (INIS)

    A review of publication data on corrosion resistance of amorphous alloys and the methods of amorphization of surface layers of massive materials (laser treatment, iron implantation, detonation-gas spraying, cathode and ion sputtering, electrodeposition) was made. A study was made on corrosion properties of Fe66Cr11B10Si4 alloy in cast state and after laser irradiation, rendering the surface amorphous as well as the samples of Arenco iron and steel 20 with ion-plasma coatings of Fe-Cr-Ni-Ti alloy. It was established that amorphous coatings posses much higher corrosion resistance as compared to crystalline alloys on the same base

  20. Stabilization of amorphous structure in silicon thin film by adding germanium

    International Nuclear Information System (INIS)

    The stabilization of the amorphous structure in amorphous silicon film by adding Ge atoms was studied using Raman spectroscopy. Amorphous Si1−xGex (x = 0.0, 0.03, 0.14, and 0.27) films were deposited on glass substrates from electron beam evaporation sources and annealed in N2 atmosphere. The change in the amorphous states and the phase transition from amorphous to crystalline were characterized using the TO, LO, and LA phonons in the Raman spectra. The temperature of the transition from the amorphous phase to the crystalline phase was higher for the a-Si1−xGex (x = 0.03, 0.14) films, and the crystallization was hindered. The reason why the addition of a suitable quantity of Ge atoms into the three-dimensional amorphous silicon network stabilizes its amorphous structure is discussed based on the changes in the Raman signals of the TO, LO, and LA phonons during annealing. The characteristic bond length of the Ge atoms allows them to stabilize the random network of the amorphous Si composed of quasi-tetrahedral Si units, and obstruct its rearrangement

  1. Bipolar pulse forming line

    Science.gov (United States)

    Rhodes, Mark A.

    2008-10-21

    A bipolar pulse forming transmission line module for linear induction accelerators having first, second, third, fourth, and fifth planar conductors which form an interleaved stack with dielectric layers between the conductors. Each conductor has a first end, and a second end adjacent an acceleration axis. The first and second planar conductors are connected to each other at the second ends, the fourth and fifth planar conductors are connected to each other at the second ends, and the first and fifth planar conductors are connected to each other at the first ends via a shorting plate adjacent the first ends. The third planar conductor is electrically connectable to a high voltage source, and an internal switch functions to short a high voltage from the first end of the third planar conductor to the first end of the fourth planar conductor to produce a bipolar pulse at the acceleration axis with a zero net time integral. Improved access to the switch is enabled by an aperture through the shorting plate and the proximity of the aperture to the switch.

  2. Complement and Isomorphism on Bipolar Fuzzy Graphs

    Directory of Open Access Journals (Sweden)

    Ali Asghar Talebi

    2014-12-01

    Full Text Available In this paper, we discuss some properties of the self complement and self weak complement bipolar fuzzy graphs, and get a sufficient condition for a bipolar fuzzy graph to be the self weak complement bipolar fuzzy graph. Also we investigate relations between operations union, join, and complement on bipolar fuzzy graphs.

  3. Complement and Isomorphism on Bipolar Fuzzy Graphs

    OpenAIRE

    Ali Asghar Talebi; Hossein Rashmanlou

    2014-01-01

    In this paper, we discuss some properties of the self complement and self weak complement bipolar fuzzy graphs, and get a sufficient condition for a bipolar fuzzy graph to be the self weak complement bipolar fuzzy graph. Also we investigate relations between operations union, join, and complement on bipolar fuzzy graphs.

  4. Amorphization of hard crystalline materials by electrosprayed nanodroplet impact

    International Nuclear Information System (INIS)

    A beam of electrosprayed nanodroplets impacting on single-crystal silicon amorphizes a thin surface layer of a thickness comparable to the diameter of the drops. The phase transition occurs at projectile velocities exceeding a threshold, and is caused by the quenching of material melted by the impacts. This article demonstrates that the amorphization of silicon is a general phenomenon, as nanodroplets impacting at sufficient velocity also amorphize other covalently bonded crystals. In particular, we bombard single-crystal wafers of Si, Ge, GaAs, GaP, InAs, and SiC in a range of projectile velocities, and characterize the samples via electron backscatter diffraction and transmission electron microscopy to determine the aggregation state under the surface. InAs requires the lowest projectile velocity to develop an amorphous layer, followed by Ge, Si, GaAs, and GaP. SiC is the only semiconductor that remains fully crystalline, likely due to the relatively low velocities of the beamlets used in this study. The resiliency of each crystal to amorphization correlates well with the specific energy needed to melt it except for Ge, which requires projectile velocities higher than expected

  5. Design and optimization of Ge profiles for improved thermal stability of SiGe HBTs

    International Nuclear Information System (INIS)

    The impact of the three state-of-the-art germanium (Ge) profiles (box, trapezoid and triangular) across the base of SiGe heterojunction bipolar transistors (HBTs) under the condition of the same total amount of Ge on the temperature dependence of current gain β and cut-off frequency fT, as well as the temperature profile, are investigated. It can be found that although the β of HBT with a box Ge profile is larger than that of the others, it decreases the fastest as the temperature increases, while the β of HBT with a triangular Ge profile is smaller than that of the others, but decreases the slowest as the temperature increases. On the other hand, the fT of HBT with a trapezoid Ge profile is larger than that of the others, but decreases the fastest as the temperature increases, and the fT of HBT with a box Ge profile is smaller than that of the others, but decreases the slowest as temperature increases. Furthermore, the peak and surface temperature difference between the emitter fingers of the HBT with a triangular Ge profile is higher than that of the others. Based on these results, a novel segmented step box Ge profile is proposed, which has modest β and fT, and trades off the temperature sensitivity of current gain and cut-off frequency, and the temperature profile of the device. (semiconductor devices)

  6. Amorphous iron (II) carbonate

    DEFF Research Database (Denmark)

    Sel, Ozlem; Radha, A.V.; Dideriksen, Knud;

    2012-01-01

    Abstract The synthesis, characterization and crystallization energetics of amorphous iron (II) carbonate (AFC) are reported. AFC may form as a precursor for siderite (FeCO3). The enthalpy of crystallization (DHcrys) of AFC is similar to that of amorphous magnesium carbonate (AMC) and more...

  7. Burden of Illness in Bipolar Depression

    OpenAIRE

    Manning, J. Sloan

    2005-01-01

    Bipolar depression is the underrecognized and unappreciated phase of bipolar disorder. Nevertheless, bipolar depression is responsible for much of the morbidity and mortality associated with the disorder. Depressive symptoms are far more prevalent than hypomanic or manic symptoms in bipolar patients, and they are associated with a heavier burden of illness, including reduced functioning, increased risk of suicidal acts, and high economic costs. Because most patients with bipolar disorder pres...

  8. Asenapine for bipolar disorder

    Directory of Open Access Journals (Sweden)

    Scheidemantel T

    2015-12-01

    Full Text Available Thomas Scheidemantel,1 Irina Korobkova,2 Soham Rej,3,4 Martha Sajatovic1,2 1University Hospitals Case Medical Center, 2Case Western Reserve University School of Medicine, Cleveland, OH, USA; 3Department of Psychiatry, University of Toronto, Toronto, ON, 4Geri PARTy Research Group, Jewish General Hospital, Montreal, QC, Canada Abstract: Asenapine (Saphris® is an atypical antipsychotic drug which has been approved by the US Food and Drug Administration for the treatment of schizophrenia in adults, as well as the treatment of acute manic or mixed episodes of bipolar I in both adult and pediatric populations. Asenapine is a tetracyclic drug with antidopaminergic and antiserotonergic activity with a unique sublingual route of administration. In this review, we examine and summarize the available literature on the safety, efficacy, and tolerability of asenapine in the treatment of bipolar disorder (BD. Data from randomized, double-blind trials comparing asenapine to placebo or olanzapine in the treatment of acute manic or mixed episodes showed asenapine to be an effective monotherapy treatment in clinical settings; asenapine outperformed placebo and showed noninferior performance to olanzapine based on improvement in the Young Mania Rating Scale scores. There are limited data available on the use of asenapine in the treatment of depressive symptoms of BD, or in the maintenance phase of BD. The available data are inconclusive, suggesting the need for more robust data from prospective trials in these clinical domains. The most commonly reported adverse effect associated with use of asenapine is somnolence. However, the somnolence associated with asenapine use did not cause significant rates of discontinuation. While asenapine was associated with weight gain when compared to placebo, it appeared to be modest when compared to other atypical antipsychotics, and its propensity to cause increases in hemoglobin A1c or serum lipid levels appeared to be

  9. Quetiapine monotherapy for bipolar depression

    OpenAIRE

    THASE, MICHAEL E.

    2008-01-01

    Michael E ThaseDepartments of Psychiatry, University of Pennsylvania School of Medicine, Philadelphia, PA, USA; the Philadelphia Veterans Affairs Medical Center, Philadelphia, PA, USA; and the University of Pittsburgh Medical Center, Pittsburgh, PA, USAAbstract: Bipolar depression is more common, disabling, and difficult-to-treat than the manic and hypomanic phases that define bipolar disorder. Unlike the treatment of so-called “unipolar” depressions, antidepressants gener...

  10. Sleep Disturbances in Bipolar Disorder

    OpenAIRE

    Cátia Alves Moreira; Pedro Afonso

    2015-01-01

    Background: Bipolar disorder, characterized by episodes of mania, hypomania and depression is associated with sleep disturbances and circadian rhythm disruption. These changes have significant impact on quality of life and in the disease prognosis. Aims: Review of the main sleep disturbances observed in the bipolar disorder, their clinical impact and the hypothetical pathophysiological mechanisms involved. Methods: We conducted a non-systematic review of the literature in English through rese...

  11. : Genetic heterogeneity of bipolar disorder

    OpenAIRE

    Mathieu, Flavie; Dizier, Marie-Hélène; Etain, Bruno; Jamain, Stéphane; Rietschel, Marcella; Maier, Wolfgang; Albus, Margot; Mckeon, Patrick; Roche, Siobhan; Blackwood, Douglas; Muir, Walter,; Henry, Chantal; Malafosse, Alain; Preisig, Martin; Ferrero, François

    2010-01-01

    Bipolar disorder has a genetic component, but the mode of inheritance remains unclear. A previous genome scan conducted in 70 European families led to detect eight regions linked to bipolar disease. Here, we present an investigation of whether the phenotypic heterogeneity of the disorder corresponds to genetic heterogeneity in these regions using additional markers and an extended sample of families. The MLS statistic was used for linkage analyses. The predivided sample test and the maximum l...

  12. Bipolar spectrum disorders. New perspectives.

    OpenAIRE

    Piver, Andre; Yatham, Lakshmi N.; Raymond W. Lam

    2002-01-01

    OBJECTIVE: To review new perspectives on diagnosis, clinical features, epidemiology, and treatment of bipolar II and related disorders. QUALITY OF EVIDENCE: Articles were identified by searching MEDLINE and ClinPSYCH from January 1994 to August 2001 using the key words bipolar disorder, type II or 2; hypomania; spectrum; or variants. Reference lists from articles were reviewed. Overall, the quality of evidence was not high; we found no randomized controlled trials that specifically addressed ...

  13. Amorphous silicon thermometer

    International Nuclear Information System (INIS)

    The carbon glass resistance thermometers (CGRT) shows an unstable drift by heat cycles. Since we were looking for a more stable element of thermometer for cryogenic and high magnetic field environments, we selected amorphous silicon as a substitute for CGRT. The resistance of many amorphous samples were measured at 4K, at 77K, and 300K. We eventually found an amorphous silicon (Si-H) alloy whose the sensitivity below 77K was comparable to that of the germanium resistance thermometer with little magnetic field influence. (author)

  14. Threat sensitivity in bipolar disorder.

    Science.gov (United States)

    Muhtadie, Luma; Johnson, Sheri L

    2015-02-01

    Life stress is a major predictor of the course of bipolar disorder. Few studies have used laboratory paradigms to examine stress reactivity in bipolar disorder, and none have assessed autonomic reactivity to laboratory stressors. In the present investigation we sought to address this gap in the literature. Participants, 27 diagnosed with bipolar I disorder and 24 controls with no history of mood disorder, were asked to complete a complex working memory task presented as "a test of general intelligence." Self-reported emotions were assessed at baseline and after participants were given task instructions; autonomic physiology was assessed at baseline and continuously during the stressor task. Compared to controls, individuals with bipolar disorder reported greater increases in pretask anxiety from baseline and showed greater cardiovascular threat reactivity during the task. Group differences in cardiovascular threat reactivity were significantly correlated with comorbid anxiety in the bipolar group. Our results suggest that a multimethod approach to assessing stress reactivity-including the use of physiological parameters that differentiate between maladaptive and adaptive profiles of stress responding-can yield valuable information regarding stress sensitivity and its associations with negative affectivity in bipolar disorder. (PsycINFO Database Record (c) 2015 APA, all rights reserved). PMID:25688436

  15. Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium

    International Nuclear Information System (INIS)

    The atomic mixing of matrix atoms during solid-phase epitaxy (SPE) is studied by means of isotopically enriched germanium (Ge) multilayer structures that were amorphized by Ge ion implantation up to a depth of 1.5 μm. Recrystallization of the amorphous structure is performed at temperatures between 350 °C and 450 °C. Secondary-ion-mass-spectrometry is used to determine the concentration-depth profiles of the Ge isotope before and after SPE. An upper limit of 0.5 nm is deduced for the displacement length of the Ge matrix atoms by the SPE process. This small displacement length is consistent with theoretical models and atomistic simulations of SPE, indicating that the SPE mechanism consists of bond-switching with nearest-neighbours across the amorphous-crystalline (a/c) interface

  16. Structural singularities in Ge(x)Te(100-x) films.

    Science.gov (United States)

    Piarristeguy, A A; Micoulaut, M; Escalier, R; Jóvári, P; Kaban, I; van Eijk, J; Luckas, J; Ravindren, S; Boolchand, P; Pradel, A

    2015-08-21

    Structural and calorimetric investigation of Ge(x)Te(100-x) films over wide range of concentration 10 stability led to conclude to the origin of the first singularity being the flexible/rigid transition proposed in the framework of rigidity model and the origin of the second one being the disappearance of the undercooled region resulting in amorphous materials with statistical distributions of bonds. While the first singularity signs the onset of the Ge-Ge homopolar bonds, the second is related to compositions where enhanced Ge-Ge correlations at intermediate lengthscales (7.7 Å) are observed. These two threshold compositions correspond to recently reported resistance drift threshold compositions, an important support for models pointing the breaking of homopolar Ge-Ge bonds as the main phenomenon behind the ageing of phase change materials. PMID:26298140

  17. Enhanced formation of Ge nanocrystals in Ge : SiO2 layers by swift heavy ions

    International Nuclear Information System (INIS)

    In this paper we report the ability of swift heavy Xe ions with an energy of 480 MeV and a fluence of 1012 cm-2 to enhance the formation of Ge nanocrystals within SiO2 layers with variable Ge contents. These Ge-SiO2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge : SiO2 films with subsequent annealing at 500 °C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5 nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550 °C and post-irradiation annealing at 600 °C, which also leads to the observation of room temperature visible photoluminescence. (paper)

  18. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    International Nuclear Information System (INIS)

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  19. Electronic transport in amorphous phase-change materials

    Energy Technology Data Exchange (ETDEWEB)

    Luckas, Jennifer Maria

    2012-09-14

    Phase change materials combine a pronounced contrast in resistivity and reflectivity between their disordered amorphous and ordered crystalline state with very fast crystallization kinetics. Due to this exceptional combination of properties phase-change materials find broad application in non-volatile optical memories such as CD, DVD or Bluray Disc. Furthermore, this class of materials demonstrates remarkable electrical transport phenomena in their disordered state, which have shown to be crucial for their application in electronic storage devices. The threshold switching phenomenon denotes the sudden decrease in resistivity beyond a critical electrical threshold field. The threshold switching phenomenon facilitates the phase transitions at practical small voltages. Below this threshold the amorphous state resistivity is thermally activated and is observed to increase with time. This effect known as resistance drift seriously hampers the development of multi-level storage devices. Hence, understanding the physical origins of threshold switching and resistance drift phenomena is crucial to improve non-volatile phase-change memories. Even though both phenomena are often attributed to localized defect states in the band gap, the defect state density in amorphous phase-change materials has remained poorly studied. Starting from a brief introduction of the physics of phase-change materials this thesis summarizes the most important models behind electrical switching and resistance drift with the aim to discuss the role of localized defect states. The centerpiece of this thesis is the investigation of defects state densities in different amorphous phase-change materials and electrical switching chalcogenides. On the basis of Modulated Photo Current (MPC) Experiments and Photothermal Deflection Spectroscopy, a sophisticated band model for the disordered phase of the binary phase-change alloy GeTe has been developed. By this direct experimental approach the band-model for a-Ge

  20. Electronic transport in amorphous phase-change materials

    International Nuclear Information System (INIS)

    Phase change materials combine a pronounced contrast in resistivity and reflectivity between their disordered amorphous and ordered crystalline state with very fast crystallization kinetics. Due to this exceptional combination of properties phase-change materials find broad application in non-volatile optical memories such as CD, DVD or Bluray Disc. Furthermore, this class of materials demonstrates remarkable electrical transport phenomena in their disordered state, which have shown to be crucial for their application in electronic storage devices. The threshold switching phenomenon denotes the sudden decrease in resistivity beyond a critical electrical threshold field. The threshold switching phenomenon facilitates the phase transitions at practical small voltages. Below this threshold the amorphous state resistivity is thermally activated and is observed to increase with time. This effect known as resistance drift seriously hampers the development of multi-level storage devices. Hence, understanding the physical origins of threshold switching and resistance drift phenomena is crucial to improve non-volatile phase-change memories. Even though both phenomena are often attributed to localized defect states in the band gap, the defect state density in amorphous phase-change materials has remained poorly studied. Starting from a brief introduction of the physics of phase-change materials this thesis summarizes the most important models behind electrical switching and resistance drift with the aim to discuss the role of localized defect states. The centerpiece of this thesis is the investigation of defects state densities in different amorphous phase-change materials and electrical switching chalcogenides. On the basis of Modulated Photo Current (MPC) Experiments and Photothermal Deflection Spectroscopy, a sophisticated band model for the disordered phase of the binary phase-change alloy GeTe has been developed. By this direct experimental approach the band-model for a-Ge

  1. The Reliability of III-V semiconductor Heterojunction Bipolar Transistors

    OpenAIRE

    M. Borgarino; Plana, R.; Graffeuil, J; Cattani, L; F. Fantini

    2000-01-01

    The Heterojunction Bipolar Transistor (HBT) features some characteristics that make it a very promising device in the telecom field. For these applications, the reliability is a key issue. The aim of the present paper is to summarise the most relevant reliability concerns, from whose the HBT suffers, as the stability of the ohmic contact, the presence of defects, and the stability of the base dopant. Since in the last years the Si/SiGe HBT has emerged as a strong competitor against the III-V ...

  2. Quetiapine monotherapy for bipolar depression

    Directory of Open Access Journals (Sweden)

    Michael E Thase

    2008-03-01

    Full Text Available Michael E ThaseDepartments of Psychiatry, University of Pennsylvania School of Medicine, Philadelphia, PA, USA; the Philadelphia Veterans Affairs Medical Center, Philadelphia, PA, USA; and the University of Pittsburgh Medical Center, Pittsburgh, PA, USAAbstract: Bipolar depression is more common, disabling, and difficult-to-treat than the manic and hypomanic phases that define bipolar disorder. Unlike the treatment of so-called “unipolar” depressions, antidepressants generally are not indicated as monotherapies for bipolar depressions and recent studies suggest that - even when used in combination with traditional mood stabilizers – antidepressants may have questionable value for bipolar depression. The current practice is that mood stabilizers are initiated first as monotherapies; however, the antidepressant efficacy of lithium and valproate is modest at best. Within this context the role of atypical antipsychotics is being evaluated. The combination of olanzapine and the antidepressant fluoxetine was the first treatment to receive regulatory approval in the US specifically for bipolar I depression. Quetiapine was the second medication to be approved for this indication, largely as the result of two pivotal trials known by the acronyms of BOLDER (BipOLar DEpRession I and II. Both studies demonstrated that two doses of quetiapine (300 mg and 600 mg given once daily at bedtime were significantly more effective than placebo, with no increased risk of patients switching into mania. Pooling the two studies, quetiapine was effective for both bipolar I and bipolar II depressions and for patients with (and without a history of rapid cycling. The two doses were comparably effective in both studies. Although the efficacy of quetiapine monotherapy has been established, much additional research is necessary. Further studies are needed to more fully investigate dose-response relationships and comparing quetiapine monotherapy to other mood stabilizers

  3. Innovative Characterization of Amorphous and Thin-Film Silicon for Improved Module Performance: 1 February 2005 - 31 July 2008

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, P. C.; Williams, G. A.

    2009-09-01

    Electron spin resonance and nuclear magnetic resonance was done on amorphous silicon samples (modules with a-Si:H and a-SixGe1-x:H intrinsic layer) to study defects that contribute to Staebler-Wronski effect.

  4. Integrated neurobiology of bipolar disorder

    Directory of Open Access Journals (Sweden)

    Vladimir eMaletic

    2014-08-01

    Full Text Available From a neurobiological perspective there is no such thing as bipolar disorder. Rather, it is almost certainly the case that many somewhat similar, but subtly different, pathological conditions produce a disease state that we currently diagnose as bipolarity. This heterogeneity—reflected in the lack of synergy between our current diagnostic schema and our rapidly advancing scientific understanding of the condition—limits attempts to articulate an integrated perspective on bipolar disorder. However, despite these challenges, scientific findings in recent years are beginning to offer a provisional unified field theory of the disease. This theory sees bipolar disorder as a suite of related neurodevelopmental conditions with interconnected functional abnormalities that often appear early in life and worsen over time. In addition to accelerated loss of volume in brain areas known to be essential for mood regulation and cognitive function, consistent findings have emerged at a cellular level, providing evidence that bipolar disorder is reliably associated with dysregulation of glial-neuronal interactions. Among these glial elements are microglia—the brain’s primary immune elements, which appear to be overactive in the context of bipolarity. Multiple studies now indicate that inflammation is also increased in the periphery of the body in both the depressive and manic phases of the illness, with at least some return to normality in the euthymic state. These findings are consistent with changes in the HPA axis, which are known to drive inflammatory activation. In summary, the very fact that no single gene, pathway or brain abnormality is likely to ever account for the condition is itself an extremely important first step in better articulating an integrated perspective on both its ontological status and pathogenesis. Whether this perspective will translate into the discovery of innumerable more homogeneous forms of bipolarity is one of the great

  5. Electrical properties of Bi-implanted amorphous chalcogenide films

    International Nuclear Information System (INIS)

    The impact of Bi implantation on the conductivity and the thermopower of GeTe, Ge–Sb–Te, and Ga–La–S films is investigated. The enhanced conductivity appears to be notably sensitive to a dose of an implant. Incorporation of Bi in amorphous chalcogenide films at doses up to 1 × 1015 cm−2 is seen not to change the majority carrier type and activation energy for the conduction process. Higher implantation doses may reverse the majority carrier type in the studied films. Electron conductivity was observed in GeTe films implanted with Bi at a dose of 2 × 1016 cm−2. These studies indicate that native coordination defects present in amorphous chalcogenide semiconductors can be deactivated by means of ion implantation. A substantial density of implantation-induced traps in the studied films and their interfaces with silicon is inferred from analysis of the space-charge-limited current and capacitance-voltage characteristics taken on Au/amorphous chalcogenide/Si structures. - Highlights: • Electron conductivity is observed in Bi-implanted GeTe films. • Higher conductivity in Bi-implanted films stems from increased density of electrically active defects. • Bi implanted in amorphous chalcogenides may promote formation of a more chemically ordered alloy

  6. Electrical properties of Bi-implanted amorphous chalcogenide films

    Energy Technology Data Exchange (ETDEWEB)

    Fedorenko, Yanina G.

    2015-08-31

    The impact of Bi implantation on the conductivity and the thermopower of GeTe, Ge–Sb–Te, and Ga–La–S films is investigated. The enhanced conductivity appears to be notably sensitive to a dose of an implant. Incorporation of Bi in amorphous chalcogenide films at doses up to 1 × 10{sup 15} cm{sup −2} is seen not to change the majority carrier type and activation energy for the conduction process. Higher implantation doses may reverse the majority carrier type in the studied films. Electron conductivity was observed in GeTe films implanted with Bi at a dose of 2 × 10{sup 16} cm{sup −2}. These studies indicate that native coordination defects present in amorphous chalcogenide semiconductors can be deactivated by means of ion implantation. A substantial density of implantation-induced traps in the studied films and their interfaces with silicon is inferred from analysis of the space-charge-limited current and capacitance-voltage characteristics taken on Au/amorphous chalcogenide/Si structures. - Highlights: • Electron conductivity is observed in Bi-implanted GeTe films. • Higher conductivity in Bi-implanted films stems from increased density of electrically active defects. • Bi implanted in amorphous chalcogenides may promote formation of a more chemically ordered alloy.

  7. Targeting astrocytes in bipolar disorder.

    Science.gov (United States)

    Peng, Liang; Li, Baoman; Verkhratsky, Alexei

    2016-06-01

    Astrocytes are homeostatic cells of the central nervous system, which are critical for development and maintenance of synaptic transmission and hence of synaptically connected neuronal ensembles. Astrocytic densities are reduced in bipolar disorder, and therefore deficient astroglial function may contribute to overall disbalance in neurotransmission and to pathological evolution. Classical anti-bipolar drugs (lithium salts, valproic acid and carbamazepine) affect expression of astroglial genes and modify astroglial signalling and homeostatic cascades. Many effects of both antidepressant and anti-bipolar drugs are exerted through regulation of glutamate homeostasis and glutamatergic transmission, through K(+) buffering, through regulation of calcium-dependent phospholipase A2 (that controls metabolism of arachidonic acid) or through Ca(2+) homeostatic and signalling pathways. Sometimes anti-depressant and anti-bipolar drugs exert opposite effects, and some effects on gene expression in drug treated animals are opposite in neurones vs. astrocytes. Changes in the intracellular pH induced by anti-bipolar drugs affect uptake of myo-inositol and thereby signalling via inositoltrisphosphate (InsP3), this being in accord with one of the main theories of mechanism of action for these drugs. PMID:27015045

  8. Lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin film

    International Nuclear Information System (INIS)

    We report that the lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin films by pulsed laser deposition. The single-crystal substrates of MgO and BaF2 are designed to match the lattice of low-temperature α-GeTe phase and high-temperature β-GeTe phase, respectively. The structures of deposited GeTe films show lattice-match dependence rather than temperature dependence. Raman analysis indicates that the α-GeTe to β-GeTe ferroelectric phase transition accompanies an increase of local six-coordinated Ge atoms, which is analogous to the phase transition from amorphous to crystalline for memory application. - Highlights: • Lattice-match dependence in crystalline GeTe growth • The epitaxial relaxation induced by slight misfit strain • Crystalline GeTe is ferroelectric. • The local structure evolution during crystalline GeTe phase transition

  9. Imunologia do transtorno bipolar Immunology of bipolar disorder

    OpenAIRE

    Izabela Guimarães Barbosa; Rodrigo Barreto Huguet; Fernando Silva Neves; Moisés Evandro Bauer; Antônio Lúcio Teixeira

    2009-01-01

    OBJETIVO: Pesquisas recentes têm implicado fatores imunes na patogênese de diversos transtornos neuropsiquiátricos. O objetivo do presente trabalho é revisar os trabalhos que investigaram a associação entre transtorno bipolar e alterações em parâmetros imunes. MÉTODOS: Artigos que incluíam as palavras-chave: "bipolar disorder", "mania", "immunology", "cytokines", "chemokines", "interleukins", "interferon" e "tumor necrosis factor" foram selecionados em uma revisão sistemática da literatura. A...

  10. Structural evolution of Ge-rich Si{sub 1−x}Ge{sub x} films deposited by jet-ICPCVD

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yu; Yang, Meng; Wang, Gang [Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Wei, Xiaoxu; Wang, Junzhuan; Li, Yun; Zheng, Youdou; Shi, Yi, E-mail: yshi@nju.edu.cn [Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Collaborative Innovation Center of Advanced Micro-structures, Nanjing University, Nanjing 210093 (China); Zou, Zewen [College of Physics and Electronics Information, Anhui Normal University, Wuhu 241000 (China)

    2015-11-15

    Amorphous Ge-rich Si{sub 1−x}Ge{sub x} films with local Ge-clustering were deposited by dual-source jet-type inductively coupled plasma chemical-vapor deposition (jet-ICPCVD). The structural evolution of the deposited films annealed at various temperatures (Ta) is investigated. Experimental results indicate that the crystallization occurs to form Ge and Si clusters as Ta = 500 °C. With raising Ta up to 900 °C, Ge clusters percolate together and Si diffuses and redistributes to form a Ge/SiGe core/shell structure, and some Ge atoms partially diffuse to the surface as a result of segregation. The present work will be helpful in understanding the structural evolution process of a hybrid SiGe films and beneficial for further optimizing the microstructure and properties.

  11. Formation mechanism of Ge nanocrystals embedded in SiO2 studied by fluorescence x-ray absorption fine structure

    Institute of Scientific and Technical Information of China (English)

    Yan Wen-Sheng; Li Zhong-Rui; Sun Zhi-Hu; Pan Zhi-Yun; Wei Shi-Qiang

    2007-01-01

    This paper reports that the Ge nanocrystals embedded in SiO2 matrix are grown on Si(100) and quartz-glass substrates, and the formation mechanism is systematically studied by using fluorescence x-ray absorption fine structure (XAFS). It is found that the formation of Ge nanocrystals strongly depends on the properties of substrate materials. In the as-prepared samples with Ge molar content of 60%, Ge atoms exist in amorphous Ge (about 36%) and GeO2 (about 24%) phases. At the annealing temperature of 1073 K, on the quartz-glass substrate Ge nanocrystals are generated from crystallization of amorphous Ge, rather than from the direct decomposition of GeO2 in the as-deposited sample.However, on the Si(100) substrate, the Ge nanocrystals are generated partly from crystallization of amorphous Ge, and partly from GeO2 phases through the permutation reaction with Si substrate. Quantitative analysis reveals that about 10% of GeO2 in the as-prepared sample are permuted with Si wafer to form Ge nanocrystals.

  12. Antimony bonding in Ge-Sb-Te phase change materials

    Science.gov (United States)

    Bobela, David C.; Taylor, P. Craig; Kuhns, Phillip; Reyes, Arneil; Edwards, Arthur

    2011-01-01

    The amorphous phase in some technologically important Ge-Sb-Te systems is still not well understood despite many models that exist to explain it. Using nuclear magnetic resonance, we demonstrate that Sb bonding in these systems follows the 8-Nrule for chemical bonding in amorphous solids. We find that the Sb atoms preferentially bond to three atoms in a pyramidal configuration analogous to the sites occurring in Sb-S or Sb-Se systems. The data we present should be used as a guide for structural modeling of the amorphous phase.

  13. Mathematical models of bipolar disorder

    Science.gov (United States)

    Daugherty, Darryl; Roque-Urrea, Tairi; Urrea-Roque, John; Troyer, Jessica; Wirkus, Stephen; Porter, Mason A.

    2009-07-01

    We use limit cycle oscillators to model bipolar II disorder, which is characterized by alternating hypomanic and depressive episodes and afflicts about 1% of the United States adult population. We consider two non-linear oscillator models of a single bipolar patient. In both frameworks, we begin with an untreated individual and examine the mathematical effects and resulting biological consequences of treatment. We also briefly consider the dynamics of interacting bipolar II individuals using weakly-coupled, weakly-damped harmonic oscillators. We discuss how the proposed models can be used as a framework for refined models that incorporate additional biological data. We conclude with a discussion of possible generalizations of our work, as there are several biologically-motivated extensions that can be readily incorporated into the series of models presented here.

  14. Social support and bipolar disorder

    OpenAIRE

    Paula Mendonça Studart; Severino Bezerra Filho; Ana Beatriz Didier Studart; Amanda Galvão-de Almeida; Ângela Miranda-Scippa

    2015-01-01

    Background Bipolar disorder is a chronic condition that affects the functioning of its carriers in many different ways, even when treated properly. Therefore, it’s also important to identify the psychosocial aspects that could contribute to an improvement of this population’s quality of life.Objective Carry out a literature review on the role of social support in cases of bipolar disorder.Method A research on the following online databases PubMed, Lilacs and SciELO was conducted by using the ...

  15. Bipolar dislocation of the clavicle

    Directory of Open Access Journals (Sweden)

    Wei Jiang

    2012-01-01

    Full Text Available Bipolar dislocation of the clavicle at acromioclavicular and sternoclavicular joint is an uncommon traumatic injury. The conservative treatments adopted in the past is associated with redislocation dysfunction and deformity. A 41 years old lady with bipolar dislocation of right shoulder is treated surgically by open reduction and internal fixation by oblique T-plate at sternoclavicular joint and Kirschner wire stabilization at acromioclavicular joint. The patient showed satisfactory recovery with full range of motion of the right shoulder and normal muscular strength. The case reported in view of rarity and at 2 years followup.

  16. Bipolar dislocation of the clavicle.

    Science.gov (United States)

    Jiang, Wei; Gao, Shu-Guang; Li, Yu-Sheng; Lei, Guang-Hua

    2012-11-01

    Bipolar dislocation of the clavicle at acromioclavicular and sternoclavicular joint is an uncommon traumatic injury. The conservative treatments adopted in the past is associated with redislocation dysfunction and deformity. A 41 years old lady with bipolar dislocation of right shoulder is treated surgically by open reduction and internal fixation by oblique T-plate at sternoclavicular joint and Kirschner wire stabilization at acromioclavicular joint. The patient showed satisfactory recovery with full range of motion of the right shoulder and normal muscular strength. The case reported in view of rarity and at 2 years followup. PMID:23325981

  17. Refractory bipolar disorder and neuroprogression.

    Science.gov (United States)

    da Costa, Sabrina C; Passos, Ives C; Lowri, Caroline; Soares, Jair C; Kapczinski, Flavio

    2016-10-01

    Immune activation and failure of physiologic compensatory mechanisms over time have been implicated in the pathophysiology of illness progression in bipolar disorder. Recent evidence suggests that such changes are important contributors to neuroprogression and may mediate the cross-sensitization of episode recurrence, trauma exposure and substance use. The present review aims to discuss the potential factors related to bipolar disorder refractoriness and neuroprogression. In addition, we will discuss the possible impacts of early therapeutic interventions as well as the alternative approaches in late stages of the disorder. PMID:26368941

  18. Epidemiologia do transtorno bipolar Epidemiology of bipolar disorders

    Directory of Open Access Journals (Sweden)

    Maurício Silva de Lima

    2005-01-01

    Full Text Available A formulação de políticas em saúde mental depende essencialmente de informações a respeito da freqüência e distribuição dos transtornos mentais. Nas últimas duas décadas, pesquisas de base populacional em epidemiologia psiquiátrica têm sido conduzidas, gerando informações detalhadas sobre freqüência, fatores de risco, incapacidade social e utilização de serviços de saúde. Neste artigo, dados sobre a epidemiologia do transtorno bipolar (TB são discutidos, a partir de resultados de recentes pesquisas populacionais: o estudo da Área de Captação Epidemiológica do Instituto Nacional de Saúde Mental dos Estados Unidos (ECA-NIMH, a Pesquisa Nacional de Comorbidade (NCS, a Pesquisa de Morbidade Psiquiátrica na Grã-Bretanha (OPCS, o Estudo Brasileiro Multicêntrico de Morbidade Psiquiátrica e os estudos longitudinais conduzidos por Angst, em Zurique. As estimativas de prevalências de transtorno bipolar são relativamente baixas, independentemente do lugar onde a pesquisa foi conduzida, do tipo de instrumento diagnóstico usado e dos períodos de tempo para os quais a prevalência se aplica. A partir da introdução do conceito de espectro bipolar, ampliando as fronteiras diagnósticas do TB, as estimativas de prevalências encontradas são substancialmente mais altas. Tais estimativas, entretanto, ainda carecem de validação em estudos populacionais. O transtorno afetivo bipolar é igualmente prevalente entre homens e mulheres, sendo mais freqüente entre solteiros ou separados. Indivíduos acometidos têm maiores taxas de desemprego e estão mais sujeitos a utilizarem serviços médicos e serem hospitalizados. O custo e a eficácia dos tratamentos do TB devem ser balanceados com o alto custo individual e social associados à enfermidade.Information about the epidemiology of bipolar disorders is essential for providing a framework for the formulation of effective mental health policy. In the last two decades, population

  19. Application of Bipolar Fuzzy Sets in Graph Structures

    OpenAIRE

    Muhammad Akram; Rabia Akmal

    2016-01-01

    A graph structure is a useful tool in solving the combinatorial problems in different areas of computer science and computational intelligence systems. In this paper, we apply the concept of bipolar fuzzy sets to graph structures. We introduce certain notions, including bipolar fuzzy graph structure (BFGS), strong bipolar fuzzy graph structure, bipolar fuzzy Ni-cycle, bipolar fuzzy Ni-tree, bipolar fuzzy Ni-cut vertex, and bipolar fuzzy Ni-bridge, and illustrate these notions by several examp...

  20. Sleep Disturbances in Bipolar Disorder

    Directory of Open Access Journals (Sweden)

    Cátia Alves Moreira

    2015-11-01

    Full Text Available Background: Bipolar disorder, characterized by episodes of mania, hypomania and depression is associated with sleep disturbances and circadian rhythm disruption. These changes have significant impact on quality of life and in the disease prognosis. Aims: Review of the main sleep disturbances observed in the bipolar disorder, their clinical impact and the hypothetical pathophysiological mechanisms involved. Methods: We conducted a non-systematic review of the literature in English through research in PubMed with the keywords “sleep disturbance”, “bipolar disorder”, “polysomnography”. Results and Conclusions: Complaints about sleep pattern changes may occur during any phase of the disease. These in clude frequent night-time awakenings, poor sleep quality, reduction of the total sleeping time and decreased latency and increased density of REM sleep. The treatment of the sleep disturbances observed in bipolar disorder should be considered a priority, since it prevents symptoms recurrence and facilitate the socio-professional integration, thus providing greater success in patient’s rehabilitation and quality of life.

  1. Corrosion resistant metallic bipolar plate

    Science.gov (United States)

    Brady, Michael P.; Schneibel, Joachim H.; Pint, Bruce A.; Maziasz, Philip J.

    2007-05-01

    A corrosion resistant, electrically conductive component such as a bipolar plate for a PEM fuel cell includes 20 55% Cr, balance base metal such as Ni, Fe, or Co, the component having thereon a substantially external, continuous layer of chromium nitride.

  2. [Cognitive deficits in bipolar disorder].

    Science.gov (United States)

    Sachs, Gabriele; Schaffer, Markus; Winklbaur, Bernadette

    2007-01-01

    Bipolar disorders are often associated with cognitive deficits which have an influence on social functioning and the course of the illness. These deficits have an impact on occupational ability and social integration. To date, specific cognitive domains have been found which characterize bipolar affective disorders. However, there is evidence of stable and lasting cognitive impairment in all phases of the disorder, including the remission phase, in the following domains: sustained attention, memory and executive functions (e.g. cognitive flexibility and problem solving). Although their cognitive deficits are comparable the deficits in patients with schizophrenia are more severe than those with bipolar disorder. Recent brain imaging findings indicate structural and functional abnormalities in the cortical and limbic networks of the brain in patients with bipolar disorder compared to healthy controls. Mood stabilizer and atypical antipsychotics may reduce cognitive deficits in certain domains (e.g. executive functions and word fluency) and may have a positive effect on quality of life and social functioning. PMID:17640495

  3. Social support and bipolar disorder

    Directory of Open Access Journals (Sweden)

    Paula Mendonça Studart

    2015-08-01

    Full Text Available Background Bipolar disorder is a chronic condition that affects the functioning of its carriers in many different ways, even when treated properly. Therefore, it’s also important to identify the psychosocial aspects that could contribute to an improvement of this population’s quality of life.Objective Carry out a literature review on the role of social support in cases of bipolar disorder.Method A research on the following online databases PubMed, Lilacs and SciELO was conducted by using the keywords “social support” or “social networks” and “mood disorders” or “bipolar disorder” or “affective disorder,” with no defined timeline.Results Only 13 studies concerning the topic of social support and BD were found in the search for related articles. Generally speaking, the results show low rates of social support for BD patients.Discussion Despite the growing interest in the overall functioning of patients with bipolar disorder, studies on social support are still rare. Besides, the existing studies on the subject use different methodologies, making it difficult to establish data comparisons.

  4. Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers

    Institute of Scientific and Technical Information of China (English)

    YAO Fei; XUE Chun-Lai; CHENG Bu-Wen; WANG Qi-Ming

    2007-01-01

    Taking into account the compensation effect of B to Ge in strained SiGe layers for the first time, the effect of heavily doped boron on the bandgap narrowing of strained SiGe layers is calculated, and the classical Jain-Roulston (J-R) model is modified. The results show that our modified J-R model well fits the experimental values. Based on the modified J-R model, the real bandgap narrowing distribution between the conduction and valence bands is further calculated, which has great influence on modelling the electrical characteristics of SiGe heterojunction bipolar transistors.

  5. SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers

    OpenAIRE

    Thirivikraman, Tushar K.; Yuan, Jiahui; Bardin, Joseph C.; Mani, Hamdi; Phillips, Stanley D.; Kuo, Wei-Min Lance; Cressler, John D.; Weinreb, Sander

    2008-01-01

    We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform. These SiGe LNAs exhibit a dramatic reduction in noise temperature with cooling, yielding Teff of less than 21 K (0.3 dB noise figure) across X-band at a 15 K operating temperature. To the authors’ knowledge, these SiGe LNAs exhibit the lowest broadband noise...

  6. Design and optimization of Ge profiles for improved thermal stability of SiGe HBTs

    Institute of Scientific and Technical Information of China (English)

    Fu Qiang; Zhang Wanrong; Jin Dongyue; Ding Chunbao; Zhao Yanxiao; Zhang Yujie

    2013-01-01

    The impact of the three state-of-the-art germanium (Ge) profiles (box,trapezoid and triangular) across the base of SiGe heterojunction bipolar transistors (HBTs) under the condition of the same total amount of Ge on the temperature dependence of current gainβ and cut-off frequency fT,as well as the temperature profile,are investigated.It can be found that although theβ of HBT with a box Ge profile is larger than that of the others,it decreases the fastest as the temperature increases,while theβ of HBT with a triangular Ge profile is smaller than that of the others,but decreases the slowest as the temperature increases.On the other hand,the fT of HBT with a trapezoid Ge profile is larger than that of the others,but decreases the fastest as the temperature increases,and the fT of HBT with a box Ge profile is smaller than that of the others,but decreases the slowest as temperature increases.Furthermore,the peak and surface temperature difference between the emitter fingers of the HBT with a triangular Ge profile is higher than that of the others.Based on these results,a novel segmented step box Ge profile is proposed,which has modestβ and fT,and trades off the temperature sensitivity of current gain and cut-off frequency,and the temperature profile of the device.

  7. Analytical modeling and numerical simulations of the thermal behavior of bipolar transistors

    OpenAIRE

    Marano, Ilaria

    2008-01-01

    The thermal behavior of various bipolar transistor categories, namely, trench-isolated (1) SOI BJTs, (2) BJTs fabricated on silicon substrates, and (3) SiGe HBTs, is thorougly analyzed. Detailed 3-D numerical simulations are employed to provide a deep understanding of the thermal process in all the structures. Based on the numerical analysis, novel highly-effective analytical thermal models are conceived and developed for a fully predictive detection of the temperature field corresponding to ...

  8. Direct simulation of ion beam induced stressing and amorphization of silicon

    OpenAIRE

    Beardmore, Keith M.; Gronbech-Jensen, Niels

    1999-01-01

    Using molecular dynamics (MD) simulation, we investigate the mechanical response of silicon to high dose ion-irradiation. We employ a realistic and efficient model to directly simulate ion beam induced amorphization. Structural properties of the amorphized sample are compared with experimental data and results of other simulation studies. We find the behavior of the irradiated material is related to the rate at which it can relax. Depending upon the ability to deform, we observe either the ge...

  9. Structural characterization of Ge nanocrystals in silica amorphised by ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Araujo, L.L. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra (Australia)], E-mail: lla109@rsphysse.anu.edu.au; Giulian, R.; Johannessen, B.; Llewellyn, D.J.; Kluth, P. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra (Australia); Azevedo, G. de M. [Laboratorio Nacional de Luz Sincrotron, Campinas (Brazil); Cookson, D.J. [Australian Synchrotron Research Program, Building 434, 9700 South Cass Avenue, Argonne, IL 60439 (United States); Ridgway, M.C. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra (Australia)

    2008-06-15

    Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 MeV Si ions over a different fluence range (2 x 10{sup 11}-2 x 10{sup 13} cm{sup -2}) than previously reported. Size and depth distributions as well as structural disorder in the NCs were measured by RBS, TEM, SAXS and EXAFS. The EXAFS results show that the embedded Ge NCs are rendered amorphous at fluences {approx}40 times lower than bulk crystalline Ge (c-Ge). No significant changes in the size or depth distribution of the NCs are observed for all irradiation fluences. Compared to c-Ge, the higher-energy structural state of the NCs prior to irradiation and the presence of the nanocrystal/matrix interface are considered the main causes for the peculiar amorphisation behavior of embedded Ge NCs.

  10. Structural characterization of Ge nanocrystals in silica amorphised by ion irradiation

    International Nuclear Information System (INIS)

    Ge nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 MeV Si ions over a different fluence range (2 x 1011-2 x 1013 cm-2) than previously reported. Size and depth distributions as well as structural disorder in the NCs were measured by RBS, TEM, SAXS and EXAFS. The EXAFS results show that the embedded Ge NCs are rendered amorphous at fluences ∼40 times lower than bulk crystalline Ge (c-Ge). No significant changes in the size or depth distribution of the NCs are observed for all irradiation fluences. Compared to c-Ge, the higher-energy structural state of the NCs prior to irradiation and the presence of the nanocrystal/matrix interface are considered the main causes for the peculiar amorphisation behavior of embedded Ge NCs

  11. Mood Disorders in Family Practice: Beyond Unipolarity to Bipolarity

    OpenAIRE

    Manning, J. Sloan; Ahmed, Saeeduddin; McGuire, Hillary C.; Hay, Donald P.

    2002-01-01

    Primary care physicians increasingly have treated depressive disorders over the last decade. Unrecognized bipolar disorder, sometimes misdiagnosed as unipolar depression, may lead to treatment resistance or nonresponse. We describe differences between unipolar and bipolar disorders, focusing on recognition, diagnosis, and treatment of bipolar spectrum disorders such as bipolar I, bipolar II, antidepressant-induced mania, and cyclothymia. Broadening the understanding of these different disorde...

  12. Anomalous activation of shallow B+ implants in Ge

    DEFF Research Database (Denmark)

    Yates, B.R.; Darby, B.L.; Rudawski, N.G.;

    2011-01-01

    The electrical activation of B+ implantation at 2 keV to doses of 5.0×1013-5.0×1015 cm-2 in crystalline and pre-amorphized Ge following annealing at 400 °C for 1.0 h was studied using micro Hall effect measurements. Preamorphization improved activation for all samples with the samples implanted t...

  13. Nicotine dependence and psychosis in Bipolar disorder and Schizoaffective disorder, Bipolar type.

    Science.gov (United States)

    Estrada, Elena; Hartz, Sarah M; Tran, Jeffrey; Hilty, Donald M; Sklar, Pamela; Smoller, Jordan W; Pato, Michele T; Pato, Carlos N

    2016-06-01

    Patients with Bipolar disorder smoke more than the general population. Smoking negatively impacts mortality and clinical course in Bipolar disorder patients. Prior studies have shown contradictory results regarding the impact of psychosis on smoking behavior in Bipolar disorder. We analyzed a large sample of Bipolar disorder and Schizoaffective disorder, Bipolar Type patients and predicted those with a history of psychosis would be more likely to be nicotine dependent. Data from subjects and controls were collected from the Genomic Psychiatry Cohort (GPC). Subjects were diagnosed with Bipolar disorder without psychosis (N = 610), Bipolar disorder with psychosis (N = 1544). Participants were classified with or without nicotine dependence. Diagnostic groups were compared to controls (N = 10065) using logistic regression. Among smokers (N = 6157), those with Bipolar disorder had an increased risk of nicotine dependence (OR = 2.5; P Bipolar disorder with psychosis were more likely to be dependent than Bipolar disorder patients without psychosis (OR = 1.3; P = 0.03). Schizoaffective disorder, Bipolar Type patients had more risk of nicotine dependence when compared to Bipolar disorder patients with or without psychosis (OR = 1.2; P = 0.02). Bipolar disorder patients experiencing more severity of psychosis have more risk of nicotine dependence. © 2015 Wiley Periodicals, Inc. PMID:26467098

  14. Circadian rhythms in the neuorbiology of bipolar of bipolar disorder

    OpenAIRE

    Timothy, Joseph

    2015-01-01

    Daily rhythms of physiology and behaviour in mammals are orchestrated by a hierarchical network of cellular oscillators. The master pacemaker that defines local and systemic timing across the brain and body are the suprachiasmatic nuclei of the hypothalamus (SCN). Disruption to the timing of sleep and daily behavioural activity can manifest in a range of pathologies including neuropsychiatric disorders. Bipolar disorder (BPD) is once such neurological condition that exhibits profound associat...

  15. Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

    OpenAIRE

    Oya, N; Toko, K.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.

    2014-01-01

    The highly (111)-textured Ge thin film (50-nm thickness) is demonstrated on a flexible polyimide film via the low-temperature crystallization (325 °C) of amorphous Ge using Al as a catalyst. Covering the polyimide with insulators significantly improved the crystal quality of the resulting Ge layer. In particular, SiN covering led to 97% (111)-oriented Ge with grains 200 μm in size, two orders larger than the grain size of polycrystalline Ge directly formed on the polyimide film. This achievem...

  16. Humidity-dependent stability of amorphous germanium nitrides fabricated by plasma nitridation

    International Nuclear Information System (INIS)

    We have investigated the stability of amorphous germanium nitride (Ge3N4) layers formed by plasma nitridation of Ge(100) surfaces using x-ray photoelectron spectroscopy and atomic force microscopy. We have found that humidity in the air accelerates the degradation of Ge3N4 layers and that under 80% humidity condition, most of the Ge-N bonds convert to Ge-O bonds, producing a uniform GeO2 layer, within 12 h even at room temperature. After this conversion of nitrides to oxides, the surface roughness drastically increased by forming GeO2 islands on the surfaces. These findings indicate that although Ge3N4 layers have superior thermal stability compared to the GeO2 layers, Ge3N4 reacts readily with hydroxyl groups and it is therefore essential to take the best care of the moisture in the fabrication of Ge-based devices with Ge3N4 insulator or passivation layers

  17. [Psychopharmacological treatment of bipolar disease].

    Science.gov (United States)

    Licht, Rasmus W; Vestergaard, Per

    2002-05-01

    This paper gives an update on the psychopharmacological treatment of bipolar disorder. The antimanic efficacy of lithium is well documented. The same applies to valproate, which is also efficacious in mixed mania. Conventional antipsychotics act fast in mania and do not require blood tests, but they have considerable neurological side effects. The newer antipsychotics, olanzapine, risperidone, and ziprasidone, have also been shown to have antimanic efficacy. Clozapine is extremely effective, also when other treatment fails. For the treatment of bipolar depression, lithium, lamotrigine, and antidepressants all seem to work, but antidepressants may sometimes precipitate mania or worsen the course of illness. For prophylaxis, lithium is still to be considered the first drug of choice. However, for several reasons, for instance treatment failure or side effects, long-term treatment with antiepileptics may often be necessary. Among the antiepileptics, carbamazepine, valproate, and lamotrigine are the best studied. PMID:12025705

  18. Unsplit bipolar pulse forming line

    Science.gov (United States)

    Rhodes, Mark A.

    2011-05-24

    A bipolar pulse forming transmission line module and system for linear induction accelerators having first, second, third, and fourth planar conductors which form a sequentially arranged interleaved stack having opposing first and second ends, with dielectric layers between the conductors. The first and second planar conductors are connected to each other at the first end, and the first and fourth planar conductors are connected to each other at the second end via a shorting plate. The third planar conductor is electrically connectable to a high voltage source, and an internal switch functions to short at the first end a high voltage from the third planar conductor to the fourth planar conductor to produce a bipolar pulse at the acceleration axis with a zero net time integral. Improved access to the switch is enabled by an aperture through the shorting plate and the proximity of the aperture to the switch.

  19. Prepubertal bipolar disorder: available pharmacological treatment options.

    Science.gov (United States)

    Masi, Gabriele

    2005-04-01

    Awareness of bipolar spectrum disorders in children is rapidly increasing, with a more precise definition of their clinical subtypes and early signs. Paediatric bipolar disorder can lead to an important impairment in scholastic, familial and social functioning, and to a higher risk for substance abuse and suicide. In the context of a multimodal approach, the core treatment of early-onset bipolar disorder is pharmacological. This review focuses on the empirical evidence for pharmacotherapy in paediatric bipolar disorder. Mood stabilizers, including lithium, and older and newer anticonvulsivants will be considered, in mono- or polypharmacy. Atypical antipsychotics will be considered in more severe and/or treatment-resistant manic or mixed episodes. Finally, the prophylaxis of intercritical phases and the management of specific challenging conditions, such as bipolar depression and attention deficit hyperactivity disorder, with bipolar comorbidity, will be reviewed. PMID:15934881

  20. Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor

    Directory of Open Access Journals (Sweden)

    Bo Zhang

    2014-01-01

    Full Text Available Ge nanocrystals (Ge-ncs embedded in a SiO2 superlattice structure were prepared by magnetron cosputtering and postdeposition annealing. The formation of spherical nanocrystals was confirmed by transmission electron microscopy and their growth process was studied by a combination of spectroscopic techniques. The crystallinity volume fraction of Ge component was found to increase with crystallite size, but its overall low values indicated a coexistence of crystalline and noncrystalline phases. A reduction of Ge-O species was observed in the superlattice during thermal annealing, accompanied by a transition from oxygen-deficient silicon oxide to silicon dioxide. A growth mechanism involving phase separation of Ge suboxides (GeOx was then proposed to explain these findings and supplement the existing growth models for Ge-ncs in SiO2 films. Further analysis of the bonding structure of Ge atoms suggested that Ge-ncs are likely to have a core-shell structure with an amorphous-like surface layer, which is composed of GeSiO ternary complex. The surface layer thickness was extracted to be a few angstroms and equivalent to several atomic layer thicknesses.

  1. Neurocognitive function in bipolar disorder: a comparison between bipolar I and II disorder and matched controls

    OpenAIRE

    Pålsson, Erik; Figueras, Clara; Johansson, Anette GM; Ekman, Carl-Johan; Hultman, Björn; Östlind, Josefin; Landén, Mikael

    2013-01-01

    Background Cognitive deficits have been documented in patients with bipolar disorder. Further, it has been suggested that the degree and type of cognitive impairment differ between bipolar I and bipolar II disorder, but data is conflicting and remains inconclusive. This study aimed to clarify the suggested differences in cognitive impairment between patients with bipolar I and II disorder in a relatively large, clinically stable sample while controlling for potential confounders. Methods 67 p...

  2. Bipolar disorder: staging and neuroprogression

    OpenAIRE

    Rodrigues, Aline André; Rosa, Adriana R.; Kunz, Maurício; Ascoli, Bruna; Kapczinski, Flávio

    2014-01-01

    In bipolar disorder illness progression has been associated with a higher number of mood episodes and hospitalizations, poorer response to treatment, and more severe cognitive and functional impairment. This supports the notion of the use of staging models in this illness. The value of staging models has long been recognized in many medical and malignant conditions. Staging models rely on the fact that different interventions may suit different stages of the disorder, and that better outcomes...

  3. High current and voltage effects in heterojunction bipolar transistor collectors

    International Nuclear Information System (INIS)

    The influence of temperature on speed and power applications is important in heterojunction bipolar transistors with the need for high current drive capability, high cutoff frequency and high voltage handling capability. At high current density, the onset of the Kirk effect is often the main power constraint in the bipolar transistor. An analytical model that accurately describes the physics behind the parasitic electron barrier formation in double heterojunction bipolar transistors in the Si/SiGe, GalnP/GaAs and InP/GaAsSb materials systems at the onset of the Kirk effect is presented. A new lateral current spreading effect due to the electron barrier dependence on collector current density is also discussed. The electron saturation velocity in Ga0.52In0.48P has also been measured as a function of temperature, utilising the Kirk effect in double heterojunction bipolar transistors. An AIGaAs base was used to eliminate the conduction band spike and measurements were carefully performed using pulse biasing to minimise device self-heating. Voltage drops across the base and collector series resistances were also taken into account. The measured room temperature saturation velocity of 5.0 x 106 cm/s decreased rapidly to 2.9 x 106 cm/s at 200 deg C. These results are particularly important for the prediction of frequency performance of Ga0.52In0.48P/(Al)GaAs/Ga0.52In0.48P DHBTs. Avalanche multiplication and hence impact ionisation coefficients for In0.53Ga0.47As have been determined from photomultiplication measurements over the temperature range of 20 - 400 K for a series of p-i-n/n-i-p diodes. Negative temperature dependence is observed in both the electron and hole multiplication of In0.53Ga0.47As at electric fields over 200 kV/cm, contrary to the temperature dependence of collector multiplication previously observed in InP/In0.53Ga0.47As heterojunction bipolar transistors. The results also showed that the breakdown voltage for In0.53Ga0.47As is comparable to GaAs at

  4. Major Ups and Downs: Bipolar Disorder Brings Extreme Mood Swings

    Science.gov (United States)

    ... our exit disclaimer . Subscribe Major Ups and Downs Bipolar Disorder Brings Extreme Mood Swings Most people feel happy ... Strike Out Stroke Wise Choices Links Dealing with Bipolar Disorder If you have bipolar disorder, get treatment and ...

  5. Cognitive Behavioral Therapy in Bipolar Disorder

    OpenAIRE

    Zeynep Mackali; Ahmet Tosun

    2011-01-01

    Bipolar disorder is an early-onset, chronic disorder. It impairs occupational, social, and family functioning, which makes learning to adapt living with the disorder and its treatment critically important. Therefore, it has now become common knowledge that psychosocial interventions are also necessary in the treatment of bipolar disorder adjunctive to pharmacotherapy. Thus, whichever psychosocial interventions are more effective in bipolar disorder is a crucial research question. In this arti...

  6. Adolescent Bipolar Disorder: A Clinical Vignette

    OpenAIRE

    Rodgers, Melissa J.; Zylstra, Robert G.; McKay, Julia B.; Solomon, A. Lee; Choby, Beth A.

    2010-01-01

    Adolescence is a vulnerable developmental phase marked by physical, psychological, and social changes that rapidly expose young people to a wide range of new stressors. When differentiating between bipolar disorder and teenage “acting out,” a careful history is important. Adolescent bipolar disorder is a psychiatric illness characterized by fluctuating episodes of mood elevation and depression that is frequently neither recognized nor formally diagnosed. Adolescents with bipolar disorder ofte...

  7. Risperidone in the treatment of bipolar mania

    OpenAIRE

    Sajatovic, Martha; Subramoniam, Madhusoodanan; Fuller, Matthew A

    2006-01-01

    Atypical antipsychotic medications have assumed growing importance for the treatment of bipolar disorder, an illness that affects approximately 1.2%–3.7% of the general population in a given year. Current practice guidelines for the treatment of bipolar mania support the use of atypical antipsychotic medications as monotherapy or as a component of polytherapy, and in clinical settings the use of atypical antipsychotics to treat bipolar disorder is widespread. Risperidone is an atypical antips...

  8. Biological rhythm disturbance in remitted bipolar patients

    OpenAIRE

    Rosa, Adriane R; Comes, Mercè; Torrent, Carla; Solè, Brisa; Reinares, Maria; Pachiarotti, Isabella; Salamero, Manel; Kapczinski, Flávio; Colom, Francesc; Vieta, Eduard

    2013-01-01

    Background Biological rhythm disturbance is common in bipolar patients and seems to affect the course and prognosis of the illness negatively. The main aim of the current study was to assess biological rhythms in remitted bipolar patients. We also assessed whether there was an association between clinical variables or functioning and biological rhythms in remitted bipolar participants. Methods The Biological Rhythms Interview of Assessment in Neuropsychiatry (BRIAN) was used to assess biologi...

  9. Bipolar Experiences and Self-Identity

    OpenAIRE

    Bedford, Rosie

    2012-01-01

    Background: Bipolar II disorder has a prevalence rate of approximately 0.4% in adults and 1.5% in adolescents, with the onset typically around 18 years old (Merikangas & Lamers, 2012). As the age of onset is during adolescent years the impact on identity is of special interest. Although the profound impact bipolar has on an individual’s sense of self has surfaced as a predominant theme in the bipolar literature, there remains a dearth of research directly addressing this impact. ...

  10. Pharmaceutical treatment of acute bipolar depression

    OpenAIRE

    Fountoulakis, Konstantinos N

    2010-01-01

    The treatment of bipolar depression is one of the most challenging fields in contemporary psychiatry. The best data concern the antipsychotics quetiapine and the olanzapine-fluoxetine combination. However, the usefulness of antidepressants in bipolar depression remains controversial; positive data are available for fluoxetine but negative results have been published for paroxetine. Accumulated knowledge so far suggests that bipolar patients need continuous administration of an antimanic agent...

  11. Distinctions between bipolar and unipolar depression

    OpenAIRE

    Cuellar, Amy K.; Johnson, Sheri L.; Winters, Ray

    2005-01-01

    This is a review of the studies comparing unipolar and bipolar depression, with focus on the course, symptomatology, neurobiology, and psychosocial literatures. These are reviewed with one question in mind: does the evidence support diagnosing bipolar and unipolar depressions as the same disorder or different? The current nomenclature of bipolar and unipolar disorders has resulted in research that compares these disorders as a whole, without considering depression separately from mania within...

  12. The common bipolar phenotype in young people

    OpenAIRE

    Rock, Philippa L; Chandler, Rebecca A.; Harmer, Catherine J.; Rogers, Robert D.; Goodwin, Guy M.

    2013-01-01

    Background Mood elevation is common in adolescents and young adults. The aim of this study was to investigate the prevalence of a bipolar diagnosis and co-morbidity in individuals identified by online screening for experience of (hypo)manic symptoms in order to better define the common bipolar phenotype in young people. Methods Survey data regarding experience of (hypo)manic symptoms and occurrence of co-morbidities were analysed for 106 students satisfying criteria for probable bipolar syndr...

  13. Plasmon-assisted photoresponse in Ge-coated bowtie nanojunctions

    CERN Document Server

    Evans, Kenneth M; Natelson, Douglas

    2016-01-01

    We demonstrate plasmon-enhanced photoconduction in Au bowtie nanojunctions containing nanogaps overlaid with an amorphous Ge film. The role of plasmons in the production of nanogap photocurrent is verified by studying the unusual polarization dependence of the photoresponse. With increasing Ge thickness, the nanogap polarization of the photoresponse rotates 90 degrees, indicating a change in the dominant relevant plasmon mode, from the resonant transverse plasmon at low thicknesses to the nonresonant "lightning rod" mode at higher thicknesses. To understand the plasmon response in the presence of the Ge overlayer and whether the Ge degrades the Au plasmonic properties, we investigate the photothermal response (from the temperature-dependent Au resistivity) in no-gap nanowire structures, as a function of Ge film thickness and nanowire geometry. The film thickness and geometry dependence are modeled using a cross-sectional, finite element simulation. The no-gap structures and the modeling confirm that the strik...

  14. Course of Subthreshold Bipolar Disorder in Youth: Diagnostic Progression from Bipolar Disorder Not Otherwise Specified

    Science.gov (United States)

    Axelson, David A.; Birmaher, Boris; Strober, Michael A.; Goldstein, Benjamin I.; Ha, Wonho; Gill, Mary Kay; Goldstein, Tina R.; Yen, Shirley; Hower, Heather; Hunt, Jeffrey I.; Liao, Fangzi; Iyengar, Satish; Dickstein, Daniel; Kim, Eunice; Ryan, Neal D.; Frankel, Erica; Keller, Martin B.

    2011-01-01

    Objective: To determine the rate of diagnostic conversion from an operationalized diagnosis of bipolar disorder not otherwise specified (BP-NOS) to bipolar I disorder (BP-I) or bipolar II disorder (BP-II) in youth over prospective follow-up and to identify factors associated with conversion. Method: Subjects were 140 children and adolescents…

  15. Ion beam induced epitaxy in Ge- and B- coimplanted silicon

    International Nuclear Information System (INIS)

    The epitaxial regrowth of amorphous surface layers in and Si substrate has been studied under irradiation with 400 keV Ar+ ions at the temperature range from 300 to 435degC. The amorphous layers were obtained by Ge+ implantation, followed by B+ implantation. The ion beam assisted epitaxy was found to be sensitive to both the substrate orientation and the implanted Ge concentration, and the layer-by-layer epitaxial regrowth seemed to be precluded in Si layers with high doses of Ge implants, e.g., 2.5 x 1015 ions/cm2. Electrical activation of implanted dopant B was also measured in the recrystallized Si layer. (author)

  16. Bipolar Disorder and Obsessive Compulsive Disorder Comorbidity

    Directory of Open Access Journals (Sweden)

    Necla Keskin

    2014-08-01

    Full Text Available The comorbidity of bipolar disorder and anxiety disorders is a well known concept. Obsessive-compulsive disorder is the most commonly seen comorbid anxiety disorder in bipolar patients. Some genetic variants, neurotransmitters especially serotonergic systems and second-messenger systems are thought to be responsible for its etiology. Bipolar disorder alters the clinical aspects of obsessive compulsive disorder and is associated with poorer outcome. The determination of comorbidity between bipolar disorder and obsessive compulsive disorder is quite important for appropriate clinical management and treatment. [Psikiyatride Guncel Yaklasimlar - Current Approaches in Psychiatry 2014; 6(4.000: 429-437

  17. Amorphous silicon based particle detectors

    OpenAIRE

    Wyrsch, N; Franco, A; Riesen, Y.; Despeisse, M; S. Dunand; Powolny, F; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  18. Poorer sustained attention in bipolar I than bipolar II disorder

    Directory of Open Access Journals (Sweden)

    Chen Shih-Heng

    2010-02-01

    Full Text Available Abstract Background Nearly all information processing during cognitive processing takes place during periods of sustained attention. Sustained attention deficit is among the most commonly reported impairments in bipolar disorder (BP. The majority of previous studies have only focused on bipolar I disorder (BP I, owing to underdiagnosis or misdiagnosis of bipolar II disorder (BP II. With the refinement of the bipolar spectrum paradigm, the goal of this study was to compare the sustained attention of interepisode patients with BP I to those with BP II. Methods In all, 51 interepisode BP patients (22 with BP I and 29 with BP II and 20 healthy controls participated in this study. The severity of psychiatric symptoms was assessed by the 17-item Hamilton Depression Rating Scale and the Young Mania Rating Scale. All participants undertook Conners' Continuous Performance Test II (CPT-II to evaluate sustained attention. Results After controlling for the severity of symptoms, age and years of education, BP I patients had a significantly longer reaction times (F(2,68 = 7.648, P = 0.001, worse detectability (d' values (F(2,68 = 6.313, P = 0.003 and more commission errors (F(2,68 = 6.182, P = 0.004 than BP II patients and healthy controls. BP II patients and controls scored significantly higher than BP I patients for d' (F = 6.313, P = 0.003. No significant difference was found among the three groups in omission errors and no significant correlations were observed between CPT-II performance and clinical characteristics in the three groups. Conclusions These findings suggested that impairments in sustained attention might be more representative of BP I than BP II after controlling for the severity of symptoms, age, years of education and reaction time on the attentional test. A longitudinal follow-up study design with a larger sample size might be needed to provide more information on chronological sustained attention deficit in BP patients, and to illustrate

  19. Progression along the Bipolar Spectrum: A Longitudinal Study of Predictors of Conversion from Bipolar Spectrum Conditions to Bipolar I and II Disorders

    OpenAIRE

    Alloy, Lauren B.; Urošević, Snežana; Abramson, Lyn Y.; Jager-Hyman, Shari; Nusslock, Robin; Whitehouse, Wayne G.; Hogan, Michael

    2011-01-01

    Little longitudinal research has examined progression to more severe bipolar disorders in individuals with “soft” bipolar spectrum conditions. We examine rates and predictors of progression to bipolar I and II diagnoses in a non-patient sample of college-age participants (n = 201) with high General Behavior Inventory scores and childhood or adolescent onset of “soft” bipolar spectrum disorders followed longitudinally for 4.5 years from the Longitudinal Investigation of Bipolar Spectrum (LIBS)...

  20. Superconducting properties of Ta/Ge multilayers

    International Nuclear Information System (INIS)

    The authors report results of measurements on the superconductor/insulator system consisting of alternating layers of amorphous Ta and amorphous Ge. This system is relatively complex owing to a very thin mixed interface layer in which the pairing interaction is stronger than in the Ta itself. Measurements have now been performed using a dilution refrigerator at temperatures down to 50 mK, and using magnetic fields of up to 14 tesla. The phase diagram of the upper critical field vs temperature has been investigated for various layer thicknesses with the field both parallel and perpendicular to the layers. The results are shown to conform with existing theories on layered superconductors. The non-linear I-V characteristic of these multilayers is also analyzed in zero field for a sample with thin superconducting layers and evidence for a Kosterlitz-Thouless transition is observed

  1. Developmental staging models in bipolar disorder

    OpenAIRE

    Passos, Ives C; Jansen, Karen; Kapczinski, Flavio

    2015-01-01

    The previous contribution of Duffy and colleagues suggests that a chain of behavioral events starting during childhood precedes the development of full-blown bipolar disorder. In this vein, the recent contribution of Keown-Stoneman and colleagues brings a new perspective to the study of prodromal symptoms of bipolar disorder.

  2. Modeling "Soft" Errors in Bipolar Integrated Circuits

    Science.gov (United States)

    Zoutendyk, J.; Benumof, R.; Vonroos, O.

    1985-01-01

    Mathematical models represent single-event upset in bipolar memory chips. Physics of single-event upset in integrated circuits discussed in theoretical paper. Pair of companion reports present mathematical models to predict critical charges for producing single-event upset in bipolar randomaccess memory (RAM) chips.

  3. Bipolar Disorder and Cognitive Therapy: A Commentary

    Science.gov (United States)

    Riskind, John H.

    2005-01-01

    This article comments on the three articles (Leahy, 2005; Newman, 2005; and Reilly-Harrington & Knauz, 2005) that deal with the applications of cognitive therapy to treatment of bipolar disorder. They focus on the uses of cognitive therapy in treating three important facets of the special problems of bipolar patients: rapid cycling, severe…

  4. Bipolar states of electrons in clusters

    International Nuclear Information System (INIS)

    Conditions are found under which the production of a bipolar state in a cluster consisting of polar molecules is possible. In (H2O)n cluster the bipolar state is possible under n ≥ 630, and in (NH3)n one - under n ≥ 2015. 4 refs

  5. Swimming in Deep Water: Childhood Bipolar Disorder

    Science.gov (United States)

    Senokossoff, Gwyn W.; Stoddard, Kim

    2009-01-01

    The authors focused on one parent's struggles in finding a diagnosis and intervention for a child who had bipolar disorder. The authors explain the process of identification, diagnosis, and intervention of a child who had bipolar disorder. In addition to the personal story, the authors provide information on the disorder and outline strategies…

  6. Bipolar disorder diagnosis: challenges and future directions.

    Science.gov (United States)

    Phillips, Mary L; Kupfer, David J

    2013-05-11

    Bipolar disorder refers to a group of affective disorders, which together are characterised by depressive and manic or hypomanic episodes. These disorders include: bipolar disorder type I (depressive and manic episodes: this disorder can be diagnosed on the basis of one manic episode); bipolar disorder type II (depressive and hypomanic episodes); cyclothymic disorder (hypomanic and depressive symptoms that do not meet criteria for depressive episodes); and bipolar disorder not otherwise specified (depressive and hypomanic-like symptoms that do not meet the diagnostic criteria for any of the aforementioned disorders). Bipolar disorder type II is especially difficult to diagnose accurately because of the difficulty in differentiation of this disorder from recurrent unipolar depression (recurrent depressive episodes) in depressed patients. The identification of objective biomarkers that represent pathophysiologic processes that differ between bipolar disorder and unipolar depression can both inform bipolar disorder diagnosis and provide biological targets for the development of new and personalised treatments. Neuroimaging studies could help the identification of biomarkers that differentiate bipolar disorder from unipolar depression, but the problem in detection of a clear boundary between these disorders suggests that they might be better represented as a continuum of affective disorders. Innovative combinations of neuroimaging and pattern recognition approaches can identify individual patterns of neural structure and function that accurately ascertain where a patient might lie on a behavioural scale. Ultimately, an integrative approach, with several biological measurements using different scales, could yield patterns of biomarkers (biosignatures) to help identify biological targets for personalised and new treatments for all affective disorders. PMID:23663952

  7. Thomson semiconductors bipolar IC strategy to 1986

    Science.gov (United States)

    Dellamussia, J. P.

    1984-04-01

    The strategy to develop and market bipolar integrated circuits through 1986 by thomson semiconductors is discussed. Current technology and future research on prototype microprocessors using bipolar integrated circuits is evaluated. The physical properties of the circuits such as heat dissipation, energy consumption rates and response times are studied.

  8. Bipolar Disorder in School-Age Children

    Science.gov (United States)

    Olson, Patricia M.; Pacheco, Mary Rae

    2005-01-01

    This article examines the individual components of bipolar disorder in children and the behaviors that can escalate as a result of misdiagnosis and treatment. The brain/behavior relationship in bipolar disorders can be affected by genetics, developmental failure, or environmental influences, which can cause an onset of dramatic mood swings and…

  9. White matter microstructure alterations in bipolar disorder

    OpenAIRE

    Bellani, M; Perlini, C.; Ferro, A.; Cerruti, S.; G. Rambaldelli; Isola, M.; CERINI, R.; N. Dusi; N. Andreone; Balestrieri, M.; R. Pozzi Mucelli; Tansella, M; Brambilla, P

    2012-01-01

    Genetic, neuropathological and magnetic resonance imaging findings support the presence of diffuse white matter cytoarchitectural disruption in bipolar disorder. In this study, diffusion-weighted imaging (DWI) was applied to study cortical white matter microstructure organisation in 24 patients with DSM-IV bipolar disorder and 35 matched normal controls.

  10. Management of Bipolar II Disorder

    OpenAIRE

    Michael M.C Wong

    2011-01-01

    Bipolar II disorder (BP II) disorder was recognized as a distinct subtype in the DSM-IV classification. DSM-IV criteria for BP II require the presence or history of one or more major depressive episode, plus at least one hypomanic episode, which, by definition, must last for at least 4 days. Various studies found distinct patterns of symptoms and familial inheritance for BP II disorder. BP II is commonly underdiagnosed or misdiagnosed. Making an early and accurate diagnosis of BP II is utmost...

  11. Bipolar Ag-Zn battery

    Science.gov (United States)

    Giltner, L. John

    1994-02-01

    The silver-zinc (AgZn) battery system has been unique in its ability to safely satisfy high power demand applications with low mass and volume. However, a new generation of defense, aerospace, and commercial applications will impose even higher power demands. These new power demands can be satisfied by the development of a bipolar battery design. In this configuration the power consuming, interelectrode current conductors are eliminated while the current is then conducted via the large cross-section electrode substrate. Negative and positive active materials are applied to opposite sides of a solid silver foil substrate. In addition to reducing the weight and volume required for a specified power level, the output voltage performance is also improved as follows. Reduced weight through: elimination of the plastic cell container; elimination of plate leads and intercell connector; and elimination of internal plate current collector. Increased voltage through: elimination of resistance of current collector; elimination of resistance of plate lead; and elimination of resistance of intercell connector. EPI worked previously on development of a secondary bipolar silver zinc battery. This development demonstrated the electrical capability of the system and manufacturing techniques. One difficulty with this development was mechanical problems with the seals. However, recent improvements in plastics and adhesives should eliminate the major problem of maintaining a seal around the periphery of the bipolar module. The seal problem is not as significant for a primary battery application or for a requirement for only a few discharge cycles. A second difficulty encountered was with activation (introducing electrolyte into the cell) and with venting gas from the cell without loss of electrolyte. During previous work, the following projections for energy density were made from test data for a high power system which demonstrated in excess of 50 discharge/charge cycles. Projected

  12. Thyroid Functions and Bipolar Affective Disorder

    Directory of Open Access Journals (Sweden)

    Subho Chakrabarti

    2011-01-01

    Full Text Available Accumulating evidence suggests that hypothalamo-pituitary-thyroid (HPT axis dysfunction is relevant to the pathophysiology and clinical course of bipolar affective disorder. Hypothyroidism, either overt or more commonly subclinical, appears to the commonest abnormality found in bipolar disorder. The prevalence of thyroid dysfunction is also likely to be greater among patients with rapid cycling and other refractory forms of the disorder. Lithium-treatment has potent antithyroid effects and can induce hypothyroidism or exacerbate a preexisting hypothyroid state. Even minor perturbations of the HPT axis may affect the outcome of bipolar disorder, necessitating careful monitoring of thyroid functions of patients on treatment. Supplementation with high dose thyroxine can be considered in some patients with treatment-refractory bipolar disorder. Neurotransmitter, neuroimaging, and genetic studies have begun to provide clues, which could lead to an improved understanding of the thyroid-bipolar disorder connection, and more optimal ways of managing this potentially disabling condition.

  13. Diagnostic stability in pediatric bipolar disorder

    DEFF Research Database (Denmark)

    Vedel Kessing, Lars; Vradi, Eleni; Andersen, Per Kragh

    2015-01-01

    BACKGROUND: The diagnostic stability of pediatric bipolar disorder has not been investigated previously. The aim was to investigate the diagnostic stability of the ICD-10 diagnosis of pediatric mania/bipolar disorder.METHODS: All patients below 19 years of age who got a diagnosis of mania....../bipolar disorder at least once in a period from 1994 to 2012 at psychiatric inpatient or outpatient contact in Denmark were identified in a nationwide register.RESULTS: Totally, 354 children and adolescents got a diagnosis of mania/bipolar disorder at least once; a minority, 144 patients (40.7%) got the diagnosis...... at the first contact whereas the remaining patients (210; 59.3%) got the diagnosis at later contacts before age 19. For the latter patients, the median time elapsed from first treatment contact with the psychiatric service system to the first diagnosis with a manic episode/bipolar disorder was nearly...

  14. Preliminary radiation tests of 32 μm thick hydrogenated amorphous silicon films

    International Nuclear Information System (INIS)

    Preliminary radiation tests of hydrogenated amorphous silicon n-i-p photodiodes deposited on a coated glass substrate are presented in this paper. These tests have been performed using a 24 GeV proton beam. We report results on the fluence dependence of the diode dark current and of the signal induced by a proton spill

  15. Preliminary radiation tests of 32 {mu}m thick hydrogenated amorphous silicon films

    Energy Technology Data Exchange (ETDEWEB)

    Despeisse, M. [CERN, 1211 Geneva 23 (Switzerland)]. E-mail: matthieu.despeisse@cern.ch; Jarron, P. [CERN, 1211 Geneva 23 (Switzerland); Johansen, K.M. [CERN, 1211 Geneva 23 (Switzerland); Moraes, D. [CERN, 1211 Geneva 23 (Switzerland); Shah, A. [IMT, rue A.L Breguet 2, CH-2000 Neuchatel (Switzerland); Wyrsch, N. [IMT, rue A.L Breguet 2, CH-2000 Neuchatel (Switzerland)

    2005-10-21

    Preliminary radiation tests of hydrogenated amorphous silicon n-i-p photodiodes deposited on a coated glass substrate are presented in this paper. These tests have been performed using a 24 GeV proton beam. We report results on the fluence dependence of the diode dark current and of the signal induced by a proton spill.

  16. Tuning electronic properties of graphene heterostructures by amorphous-to-crystalline phase transitions

    Science.gov (United States)

    Kulju, S.; Akola, J.; Prendergast, D.; Jones, R. O.

    2016-05-01

    The remarkable ability of phase change materials (PCM) to switch between amorphous and crystalline states on a nanosecond time scale could provide new opportunities for graphene engineering. We have used density functional calculations to investigate the structures and electronic properties of heterostructures of thin amorphous and crystalline films of the PCM GeTe (16 Å thick) and Ge2Sb2Te5 (20 Å) between graphene layers. The interaction between graphene and PCM is very weak, charge transfer is negligible, and the structures of the chalcogenide films differ little from those of bulk phases. A crystalline GeTe (111) layer induces a band gap opening of 80 meV at the Dirac point. This effect is absent for the amorphous film, but the Fermi energy shifts down along the Dirac cone by -60 meV. Ge2Sb2Te5 shows similar features, although inherent disorder in the crystalline rocksalt structure reduces the contrast in band structure from that in the amorphous structure. These features originate in charge polarization within the crystalline films, which show electromechanical response (piezoelectricity) upon compression, and show that the electronic properties of graphene structures can be tuned by inducing ultrafast structural transitions within the chalcogenide layers. Graphene can also be used to manipulate the structural state of the PCM layer and its electronic and optical properties.

  17. SiGe HBT BiCMOS technology for millimeter-wave applications

    Science.gov (United States)

    Joseph, Alvin; Dahlstrom, Mattias; Liu, Qizhi; Orner, Bradley; Liu, Xuefeng; Sheridan, David; Rassel, Robert; Dunn, Jim; Ahlgren, David

    2006-03-01

    We present the advances in Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT) and BiCMOS technology capabilities to address the emerging millimetre-wave (mmWave) applications. SiGe HBTs with f MAX performance reaching 350 GHz that are integrated with advanced CMOS and high-frequency passives is envisioned to allow better integration capability for mmWave applications. This capability of SiGe HBT BiCMOS technology is discussed relative to an InP HBT technology.

  18. Crystal-amorphous transformation via defect-templating in phase-change materials

    Science.gov (United States)

    Nukala, Pavan

    Phase-change materials (PCM) such as GeTe and Ge-Sb-Te alloys are potential candidates for non-volatile memory applications, because they can reversibly and rapidly transform between a crystalline phase and an amorphous phase with medium-range order. Traditionally, crystal-amorphous transformation in these materials has been carried out via melt-quench pathway, where the crystalline phase is heated beyond its melting point by the rising edge of an electric pulse, and the melt phase is quenched by the falling edge into a glassy phase. Formation of an intermediate melt phase in this transformation pathway requires usage of large switching current densities, resulting in energy wastage, and device degradation issues. Furthermore, melt-quench pathway is a brute force strategy of amorphizing PCM, and does not utilize the peculiar structural properties in crystalline phase. It will be beneficial from a device perspective that crystal-amorphous transformation is carried out via subtler solid-state pathways. Single-crystalline nanowire phase-change memory, owing to its lateral geometry and large volumes of active material, offers a platform to construct a crystal-amorphous transformation pathway via gradually increasing disorder in the crystalline phase, and study it. Using in situ transmission electron microscopy on GeTe and Ge2Sb2Te5 systems, we showed that the application of an electric pulse (heat-shock) creates dislocations in the PCM that migrate with the hole-wind force, and interact with the already existing ferroelectric boundaries in case of GeTe, changing their nature. We adapted novel tools such as optical second harmonic generation polarimety to carefully study these defect interactions. These defects accumulate at a region of local inhomogeneity, and upon addition of defects beyond a critical limit to that region via electrical pulsing, an amorphous phase "nucleates". We also studied the effect of defect dynamics on carrier transport using temperature

  19. ????????????-???????????? ?????? ? ????????????? ????????? ???????? ??????? Ge-Si

    OpenAIRE

    ????????, ?. ?.; ???????????, ?. ?.; ???, ?. ?.; ?????????, ?. ?.

    2003-01-01

    ?????????? ????????????-???????????? ?????? ? ????????????? ????????? (??) ???????? ??????? GexSi1-x (? = 0.01 - 0.03) p-???? ??????????? ? ?????????????? ????????? (4,2 ... 300 K). ????????????? ????? ?????????? ?? ?????-??? ?? ?????????????????? ??. ??????????? ?????????? ??????? ????????? ??????? ??? ?????????? ??. ???????? ?????????? ??????????? ?'???-??????? ?? ??????????????? ? ?? Ge-Si ??????? ???????? ?????-?????????? ?? ???????? ???????????. ?????????? ?????????? ??????????? ???...

  20. Valproate, bipolar disorder and polycystic ovarian syndrome

    Directory of Open Access Journals (Sweden)

    Okanović Milana

    2016-01-01

    Full Text Available Introduction. Polycystic ovarian syndrome is a syndrome of ovarian dysfunction with the principal features of hyperandrogenism and polycystic ovary morphology. A large number of studies conducted on this topic have suggested a possible role of anticonvulsants, particularly valproate, in the pathogenesis or risk factors associated with polycystic ovarian syndrome. Bipolar treatment guidelines from Canada and the United States of America recommend valproate as the first line strategy in the acute treatment of bipolar disorder. Discussion. Most persons with bipolar disorder require maintenance treatment. Long-term administration of valproate in women with bipolar disorder or epilepsy is believed to result in the increased risk of hyperandro­genism, menstrual abnormalities and polycystic ovaries. Valproate may also increase the risk of infertility and other associated symptoms of polycystic ovarian syndrome. Therefore, particular caution is indicated in the use of valproate in women of reproductive age. Conclusion. The treatment of the female patients with bipolar disorder presents various challenges for the clinician. Every woman of reproductive age needs to know the risk and benefits of her pharmacologic treatment options. Bipolar disorder should be considered chronic disorder, whose development is largely affected by hormonal changes and reproductive cycle in women. These issues should be researched more thoroughly in order to opt for the most appropriate treatment in women with bipolar disorder.

  1. Brief Report: A Family Risk Study Exploring Bipolar Spectrum Problems and Cognitive Biases in Adolescent Children of Bipolar Parents

    Science.gov (United States)

    Espie, Jonathan; Jones, Steven H.; Vance, Yvonne H.; Tai, Sara J.

    2012-01-01

    Children of parents with bipolar disorder are at increased risk of bipolar spectrum diagnoses. This cross-sectional study explores cognitive factors in the prediction of vulnerability to bipolar disorder. Adolescents at high-risk (with a parent with bipolar disorder; n = 23) and age and gender matched adolescents (n = 24) were recruited. Parent…

  2. Lower switch rate in depressed patients with bipolar II than bipolar I disorder treated adjunctively with second-generation antidepressants

    NARCIS (Netherlands)

    Altshuler, LL; Suppes, T; Nolen, WA; Leverich, G; Keck, PE; Frye, MA; Kupka, R; McElroy, SL; Grunze, H; Kitchen, CMR; Post, R; Black, D.O.

    2006-01-01

    Objectives: The authors compared the switch rate into hypomania/mania in depressed patients treated with second-generation antidepressants who had either bipolar I or bipolar II disorder. Method: In a 10-week trial, 184 outpatients with bipolar depression (134 with bipolar I disorder, 48 with bipola

  3. Formation of Ge{sup 0} and GeO{sub x} nanoclusters in Ge{sup +}-implanted SiO{sub 2}/Si thin-film heterostructures under rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Zatsepin, A.F., E-mail: a.f.zatsepin@urfu.ru [Institute of Physics and Technology, Ural Federal University, Mira Str. 19, 620002 Yekaterinburg (Russian Federation); Zatsepin, D.A. [Institute of Physics and Technology, Ural Federal University, Mira Str. 19, 620002 Yekaterinburg (Russian Federation); Institute of Metal Physics, Russian Academy of Sciences – Ural Division, S. Kovalevskoi Str. 18, 620990 Yekaterinburg (Russian Federation); Institute of Physics, Polish Academy of Science, 02-668 Warsaw (Poland); Zhidkov, I.S. [Institute of Physics and Technology, Ural Federal University, Mira Str. 19, 620002 Yekaterinburg (Russian Federation); Kurmaev, E.Z. [Institute of Physics and Technology, Ural Federal University, Mira Str. 19, 620002 Yekaterinburg (Russian Federation); Institute of Metal Physics, Russian Academy of Sciences – Ural Division, S. Kovalevskoi Str. 18, 620990 Yekaterinburg (Russian Federation); Fitting, H.-J. [Institute of Physics, University of Rostock, D-18051 Rostock (Germany); Schmidt, B. [Institute of Ion Beam Physics, Research Center Dresden-Rossendorf, POB 510119, 01314 Dresden (Germany); Mikhailovich, A.P. [Institute of Physics and Technology, Ural Federal University, Mira Str. 19, 620002 Yekaterinburg (Russian Federation); Lawniczak-Jablonska, K. [Institute of Physics, Polish Academy of Science, 02-668 Warsaw (Poland)

    2015-09-15

    Highlights: • Results of XPS for valence and core levels of Ge implanted SiO{sub 2} films are presented. • Chemical-state transformation of the host-matrix composition and Ge ions is performed. • The rapid thermal annealing strongly affects the oxidation states of Ge-atoms. • The formation of Ge{sup 0} and GeO{sub x} clusters within subsurface layer is observed. - Abstract: The results of X-ray photoelectron spectra (XPS valence band and core levels) measurements for Ge{sup +} implanted SiO{sub 2}/Si heterostructures are presented. These heterostructures have a 30 nm thick Ge{sup +} ion implanted amorphous SiO{sub 2} layer on p-type Si. The chemical-state transformation of the host-matrix composition after Ge{sup +} ion implantation and rapid thermal annealing (RTA) are discussed. The XPS-analysis performed allows to conclude the formation of Ge{sup 0} and GeO{sub x} clusters within the samples under study. It was established, that the annealing time strongly affects the degree of oxidation states of Ge-atoms.

  4. Morphological analysis of GeTe in inline phase change switches

    International Nuclear Information System (INIS)

    Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A monolithically integrated thin film heating element successfully converted GeTe to ON and OFF states. Device cycling prompted the formation of an active area which sustains the majority of structural changes during pulsing. A transition region on both sides of the active area consisting of polycrystalline GeTe and small nuclei (<15 nm) in an amorphous matrix was also observed. The switching mechanism, determined by variations in pulsing parameters, was shown to be predominantly growth-driven. A preliminary model for crystallization and amorphization in IPCS devices is presented

  5. Morphological analysis of GeTe in inline phase change switches

    Science.gov (United States)

    King, Matthew R.; El-Hinnawy, Nabil; Salmon, Mike; Gu, Jitty; Wagner, Brian P.; Jones, Evan B.; Borodulin, Pavel; Howell, Robert S.; Nichols, Doyle T.; Young, Robert M.

    2015-09-01

    Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A monolithically integrated thin film heating element successfully converted GeTe to ON and OFF states. Device cycling prompted the formation of an active area which sustains the majority of structural changes during pulsing. A transition region on both sides of the active area consisting of polycrystalline GeTe and small nuclei (<15 nm) in an amorphous matrix was also observed. The switching mechanism, determined by variations in pulsing parameters, was shown to be predominantly growth-driven. A preliminary model for crystallization and amorphization in IPCS devices is presented.

  6. Amorphous silicon based large format uncooled FPA microbolometer technology

    Science.gov (United States)

    Schimert, T.; Brady, J.; Fagan, T.; Taylor, M.; McCardel, W.; Gooch, R.; Ajmera, S.; Hanson, C.; Syllaios, A. J.

    2008-04-01

    This paper presents recent developments in next generation microbolometer Focal Plane Array (FPA) technology at L-3 Communications Infrared Products (L-3 CIP). Infrared detector technology at L-3 CIP is based on hydrogenated amorphous silicon (a-Si:H) and amorphous silicon germanium(a-SiGe:H). Large format high performance, fast, and compact IR FPAs are enabled by a low thermal mass pixel design; favorable material properties; an advanced ROIC design; and wafer level packaging. Currently at L-3 CIP, 17 micron pixel FPA array technology including 320x240, 640 x 480 and 1024 x768 arrays is under development. Applications of these FPAs range from low power microsensors to high resolution near-megapixel imager systems.

  7. Paired structures and bipolar knowledge representation

    DEFF Research Database (Denmark)

    Montero, Javier; Bustince, Humberto; Franco, Camilo;

    In this strictly positional paper we propose a general approach to bipolar knowledge representation, where the meaning of concepts can be modelled by examining their decomposition into opposite and neutral categories. In particular, it is the semantic relationship between the opposite categories...... at the same time the type of neutrality rising in between opposites. Based on this first level of bipolar knowledge representation, paired structures in fact offer the means to characterize a specific bipolar valuation scale depending on the meaning of the concept that has to be verified. In this...

  8. Vacuum interface flashover with bipolar electric fields

    International Nuclear Information System (INIS)

    High energy, compact, particle accelerators require accelerating cavities that have large gradients and operate with high efficiency. The bipolar electric fields necessary in these efficient accelerating cavities place severe requirements on the insulator-vacuum interface. A new interface has been designed and 50 gv/cm bipolar flashover field achieved for a waveform train that lasted 1 μs. This paper discusses the design of this vacuum interface and the evaluation of various materials that led to achieving bipolar flashover fields 50% greater than the authors had previously obtained

  9. Ionizing radiations simulation on bipolar components

    International Nuclear Information System (INIS)

    This thesis presents the ionizing radiation effects on bipolar components and more specially their behavior facing the total dose. The first part is devoted to the radiation environments with a special attention to the spatial environments and new emergent environments. The specificities of bipolar components are then presented and their behavior facing the interactions. The physical mechanisms bound to the dose rate are also discussed. The second part presents a physical analysis of degradations induced by the cumulated dosimetry on bipolar components and simulation with the ATLAS code. The third part exposes an electric empirical simulation induced by the cumulated dose in static conditions. (A.L.B.)

  10. Shear amorphization of boron suboxide

    International Nuclear Information System (INIS)

    We report for the first time the shear-induced local amorphization of boron suboxide subjected to nanoindentation. The amorphous bands have a width of ∼1–3 nm and a length of 200–300 nm along the (01¯11) crystal plane. We show direct experimental evidence that the amorphous shear bands of boron suboxide are driven from the coalescence of dislocation loops under high shear stresses. These observations provide insights into the microscopic deformation and failure of high-strength and lightweight ceramics

  11. Simulation in Amorphous Silicon and Amorphous Silicon Carbide Pin Diodes

    OpenAIRE

    Gonçalves, Dora; Fernandes, Miguel; Louro, Paula; Fantoni, Alessandro; Vieira, Manuela

    2014-01-01

    Part 21: Electronics: Devices International audience Photodiodes are devices used as image sensors, reactive to polychromatic light and subsequently color detecting, and they are also used in optical communication applications. To improve these devices performance it is essential to study and control their characteristics, in fact their capacitance and spectral and transient responses. This study considers two types of diodes, an amorphous silicon pin and an amorphous silicon carbide pi...

  12. Luminescence properties of Ge implanted SiO2:Ge and GeO2:Ge films

    International Nuclear Information System (INIS)

    We have investigated cathodeluminescence (CL) of Ge implanted SiO2:Ge and GeO2:Ge films. The GeO2 films were grown by oxidation of Ge substrate at 550 deg. C for 3 h in O2 gas flow. The GeO2 films on Ge substrate and SiO2 films on Si substrate were implanted with Ge-negative ions. The implanted Ge atom concentrations in the films were ranging from 0.1 to 6.0 at%. To produce Ge nanoparticles the SiO2:Ge films were thermally annealed at various temperatures of 600-900 deg. C for 1 h in N2 gas flow. An XPS analysis has shown that the implanted Ge atoms were partly oxidized. CL was observed at wavelengths around 400 nm from the GeO2 films before and after Ge--implantation as well as from SiO2:Ge films. After Ge--implantation of about 0.5 at% the CL intensity has increased by about four times. However, the CL intensity from the GeO2:Ge films was several orders of magnitude smaller than the intensity from the 800 deg. C-annealed SiO2:Ge films with 0.5 at% of Ge atomic concentration. These results suggested that the luminescence was generated due to oxidation of Ge nanoparticles in the SiO2:Ge films.

  13. Antidepressant chronotherapeutics for bipolar depression.

    Science.gov (United States)

    Benedetti, Francesco

    2012-12-01

    Chronotherapeutics refers to treatments based on the principles of circadian rhythm organization and sleep physiology, which control the exposure to environmental stimuli that act on biological rhythms, in order to achieve therapeutic effects in the treatment of psychiatric conditions. It includes manipulations of the sleep-wake cycle such as sleep deprivation and sleep phase advance, and controlled exposure to light and dark. The antidepressant effects of chronotherapeutics are evident in difficult-to-treat conditions such as bipolar depression, which has been associated with extremely low success rates of antidepressant drugs in naturalistic settings and with stable antidepressant response to chronotherapeutics in more than half of the patients. Recent advances in the study of the effects of chronotherapeutics on neurotransmitter systems, and on the biological clock machinery, allow us to pinpoint its mechanism of action and to transform it from a neglected or "orphan" treatment to a powerful clinical instrument in everyday psychiatric practice. PMID:23393416

  14. Bipolar disorder and neurophysiologic mechanisms

    Directory of Open Access Journals (Sweden)

    Simon M McCrea

    2008-11-01

    Full Text Available Simon M McCreaDepartments of Neurology and Neuroophthalmology, University of British Columbia, 2550 Willow Street, Vancouver, British Columbia, Canada V5Z 3N9Abstract: Recent studies have suggested that some variants of bipolar disorder (BD may be due to hyperconnectivity between orbitofrontal (OFC and temporal pole (TP structures in the dominant hemisphere. Some initial MRI studies noticed that there were corpus callosum abnormalities within specific regional areas and it was hypothesized that developmentally this could result in functional or effective connectivity changes within the orbitofrontal-basal ganglia-thalamocortical circuits. Recent diffusion tensor imaging (DTI white matter fiber tractography studies may well be superior to region of interest (ROI DTI in understanding BD. A “ventral semantic stream” has been discovered connecting the TP and OFC through the uncinate and inferior longitudinal fasciculi and the elusive TP is known to be involved in theory of mind and complex narrative understanding tasks. The OFC is involved in abstract valuation in goal and sub-goal structures and the TP may be critical in binding semantic memory with person–emotion linkages associated with narrative. BD patients have relative attenuation of performance on visuoconstructional praxis consistent with an atypical localization of cognitive functions. Multiple lines of evidence suggest that some BD alleles are being selected for which could explain the enhanced creativity in higher-ability probands. Associations between ROI’s that are not normally connected could explain the higher incidence of artistic aptitude, writing ability, and scientific achievements among some mood disorder subjects.Keywords: bipolar disorder, diffusion tensor imaging, white matter tractography, inferior longitudinal fasciculus, inferior fronto-occipital fasciculus, uncinate fasciculus, mood dysphoria, creativity, ventral semantic stream, writing ability, artistic aptitude

  15. Charge trapping of Ge-nanocrystals embedded in TaZrO{sub x} dielectric films

    Energy Technology Data Exchange (ETDEWEB)

    Lehninger, D., E-mail: David.Lehninger@physik.tu-freiberg.de; Seidel, P.; Geyer, M.; Schneider, F.; Heitmann, J. [Institute of Applied Physics, TU Bergakademie Freiberg, D-09596 Freiberg (Germany); Klemm, V.; Rafaja, D. [Institute of Materials Science, TU Bergakademie Freiberg, D-09596 Freiberg (Germany); Borany, J. von [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, D-01314 Dresden (Germany)

    2015-01-12

    Ge-nanocrystals (NCs) were synthesized in amorphous TaZrO{sub x} by thermal annealing of co-sputtered Ge-TaZrO{sub x} layers. Formation of spherical shaped Ge-NCs with small variation of size, areal density, and depth distribution was confirmed by high-resolution transmission electron microscopy. The charge storage characteristics of the Ge-NCs were investigated by capacitance-voltage and constant-capacity measurements using metal-insulator-semiconductor structures. Samples with Ge-NCs exhibit a maximum memory window of 5 V by sweeping the bias voltage from −7 V to 7 V and back. Below this maximum, the width of the memory window can be controlled by the bias voltage. The fitted slope of the memory window versus bias voltage characteristics is very close to 1 for samples with one layer Ge-NCs. A second layer Ge-NCs does not result in a second flat stair in the memory window characteristics. Constant-capacity measurements indicate charge storage in trapping centers at the interfaces between the Ge-NCs and the surrounding materials (amorphous matrix/tunneling oxide). Charge loss occurs by thermal detrapping and subsequent band-to-band tunneling. Reference samples without Ge-NCs do not show any memory window.

  16. Charge trapping of Ge-nanocrystals embedded in TaZrOx dielectric films

    International Nuclear Information System (INIS)

    Ge-nanocrystals (NCs) were synthesized in amorphous TaZrOx by thermal annealing of co-sputtered Ge-TaZrOx layers. Formation of spherical shaped Ge-NCs with small variation of size, areal density, and depth distribution was confirmed by high-resolution transmission electron microscopy. The charge storage characteristics of the Ge-NCs were investigated by capacitance-voltage and constant-capacity measurements using metal-insulator-semiconductor structures. Samples with Ge-NCs exhibit a maximum memory window of 5 V by sweeping the bias voltage from −7 V to 7 V and back. Below this maximum, the width of the memory window can be controlled by the bias voltage. The fitted slope of the memory window versus bias voltage characteristics is very close to 1 for samples with one layer Ge-NCs. A second layer Ge-NCs does not result in a second flat stair in the memory window characteristics. Constant-capacity measurements indicate charge storage in trapping centers at the interfaces between the Ge-NCs and the surrounding materials (amorphous matrix/tunneling oxide). Charge loss occurs by thermal detrapping and subsequent band-to-band tunneling. Reference samples without Ge-NCs do not show any memory window

  17. Effect of crystalline/amorphous interfaces on thermal transport across confined thin films and superlattices

    Science.gov (United States)

    Giri, Ashutosh; Braun, Jeffrey L.; Hopkins, Patrick E.

    2016-06-01

    We report on the thermal boundary resistances across crystalline and amorphous confined thin films and the thermal conductivities of amorphous/crystalline superlattices for Si/Ge systems as determined via non-equilibrium molecular dynamics simulations. Thermal resistances across disordered Si or Ge thin films increase with increasing length of the interfacial thin films and in general demonstrate higher thermal boundary resistances in comparison to ordered films. However, for films ≲3 nm, the resistances are highly dependent on the spectral overlap of the density of states between the film and leads. Furthermore, the resistances at a single amorphous/crystalline interface in these structures are much lower than those at interfaces between the corresponding crystalline materials, suggesting that diffusive scattering at an interface could result in higher energy transmissions in these systems. We use these findings, together with the fact that high mass ratios between amorphous and crystalline materials can lead to higher thermal resistances across thin films, to design amorphous/crystalline superlattices with very low thermal conductivities. In this regard, we study the thermal conductivities of amorphous/crystalline superlattices and show that the thermal conductivities decrease monotonically with increasing interface densities above 0.1 nm-1. These thermal conductivities are lower than that of the homogeneous amorphous counterparts, which alludes to the fact that interfaces non-negligibly contribute to thermal resistance in these superlattices. Our results suggest that the thermal conductivity of superlattices can be reduced below the amorphous limit of its material constituent even when one of the materials remains crystalline.

  18. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, A. P. Gnana, E-mail: gnanaprakash@physics.uni-mysore.ac.in; Praveen, K. C. [Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, Karnataka-570006 (India); Pushpa, N. [Department of PG Studies in Physics, JSS College, Ooty Road, Mysore-570025 (India); Cressler, John D. [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332 (United States)

    2015-05-15

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to {sup 60}Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  19. Cognitive dysfunction in bipolar disorder and schizophrenia

    DEFF Research Database (Denmark)

    Bortolato, Beatrice; Miskowiak, Kamilla W; Köhler, Cristiano A;

    2015-01-01

    Cognitive impairment is a core feature of schizophrenia (SZ) and bipolar disorder (BD). A neurocognitive profile characterized by widespread cognitive deficits across multiple domains in the context of substantial intellectual impairment, which appears to antedate illness onset, is a replicated...

  20. Internet use by patients with bipolar disorder

    DEFF Research Database (Denmark)

    Bauer, Rita; Conell, Jörn; Glenn, Tasha;

    2016-01-01

    There is considerable international interest in online education of patients with bipolar disorder, yet little understanding of how patients use the Internet and other sources to seek information. 1171 patients with a diagnosis of bipolar disorder in 17 countries completed a paper-based, anonymous...... survey. 81% of the patients used the Internet, a percentage similar to the general public. Older age, less education, and challenges in country telecommunications infrastructure and demographics decreased the odds of using the Internet. About 78% of the Internet users looked online for information...... for information on bipolar disorder consulted medical professionals plus a mean of 2.3 other information sources such as books, physician handouts, and others with bipolar disorder. Patients not using the Internet consulted medical professionals plus a mean of 1.6 other information sources. The percentage...

  1. White matter microstructure alterations in bipolar disorder

    Science.gov (United States)

    Bellani, Marcella; Perlini, Cinzia; Ferro, Adele; Cerruti, Stefania; Rambaldelli, Gianluca; Isola, Miriam; Cerini, Roberto; Dusi, Nicola; Andreone, Nicola; Balestrieri, Matteo; Mucelli, Roberto Pozzi; Tansella, Michele; Brambilla, Paolo

    2012-01-01

    Summary Genetic, neuropathological and magnetic resonance imaging findings support the presence of diffuse white matter cytoarchitectural disruption in bipolar disorder. In this study, diffusion-weighted imaging (DWI) was applied to study cortical white matter microstructure organisation in 24 patients with DSM-IV bipolar disorder and 35 matched normal controls. DWI images were obtained using a 1.5 Tesla scanner and apparent diffusion coefficient (ADC) values were determined over regions of interest placed, bilaterally, in the frontal, temporal, parietal, and occipital white matter. Significantly increased ADC values were found in bipolar patients with respect to normal controls in the right temporal lobe, left parietal lobe and bilateral occipital lobes. ADC values did not associate significantly with age or with clinical variables (p>0.05). Diffuse cortical white matter alterations on DWI in bipolar disorder denote widespread disruption of white matter integrity and may be due to altered myelination and/or axonal integrity. PMID:22687164

  2. Are rates of pediatric bipolar disorder increasing?

    DEFF Research Database (Denmark)

    Kessing, Lars Vedel; Vradi, Eleni; Andersen, Per Kragh

    2014-01-01

    Studies from the USA suggest that rates of pediatric bipolar disorder have increased since the mid-90s, but no study outside the USA has been published on the rates of pediatric bipolar disorder. Further, it is unclear whether an increase in rates reflects a true increase in the illness or more...... diagnostic attention. Using nationwide registers of all inpatients and outpatients contacts to all psychiatric hospitals in Denmark, we investigated (1) gender-specific rates of incident pediatric mania/bipolar disorder during a period from 1995 to 2012, (2) whether age and other characteristics for...... pediatric mania/bipolar disorder changed during the calendar period (1995 to 2003 versus 2004 to 2012), and (3) whether the diagnosis is more often made at first psychiatric contact in recent time compared to earlier according to gender. Totally, 346 patients got a main diagnosis of a manic episode (F30) or...

  3. Amorphous drugs and dosage forms

    DEFF Research Database (Denmark)

    Grohganz, Holger; Löbmann, K.; Priemel, P.;

    2013-01-01

    The transformation to an amorphous form is one of the most promising approaches to address the low solubility of drug compounds, the latter being an increasing challenge in the development of new drug candidates. However, amorphous forms are high energy solids and tend to recry stallize. New...... formulation principles are needed to ensure the stability of amorphous drug forms. The formation of solid dispersions is still the most investigated approach, but additional approaches are desirable to overcome the shortcomings of solid dispersions. Spatial separation by either coating or the use of micro......-containers has shown potential to prevent or delay recrystallization. Another recent approach is the formation of co-amorphous mixtures between either two drugs or one drug and one low molecular weight excipient. Molecular interactions between the two molecules provide an energy barrier that has to be overcome...

  4. Bipolar Harmonic encoding of CMB correlation patterns

    OpenAIRE

    Joshi, Nidhi; Jhingan, Sanjay; Souradeep, Tarun; Hajian, Amir

    2009-01-01

    Deviations from statistical isotropy can be modeled in various ways, for instance, anisotropic cosmological models (Bianchi models), compact topologies and presence of primordial magnetic field. Signature of anisotropy manifests itself in CMB correlation patterns. Here we explore the symmetries of the correlation function and its implications on the observable measures constructed within the Bipolar harmonic formalism for these variety of models. Different quantifiers within the Bipolar harmo...

  5. Integrating Bipolar Disorder Management in Primary Care

    OpenAIRE

    Kilbourne, Amy M.; Goodrich, David E.; O’Donnell, Allison N.; Miller, Christopher J.

    2012-01-01

    There is growing realization that persons with bipolar disorder may exclusively be seen in primary (general medical) care settings, notably because of limited access to mental health care and stigma in seeking mental health treatment. At least two clinical practice guidelines for bipolar disorder recommend collaborative chronic care models (CCMs) to help integrate mental health care to better manage this illness. CCMs, which include provider guideline support, self-management support, care ma...

  6. Long-term Treatment in Bipolar Disorder

    OpenAIRE

    Meliha Zengin Eroglu; Nurgul Ozpoyraz

    2010-01-01

    Although the importance of long-term prophylactic treatment is certain in bipolar disorder, there is stil debate on how to which patients and evaluate the treatment response. Efficacious long-term treatment can reduce morbidity and mortality significantly and improve quality of life of bipolar patients. The concept of ideal response should also be defined very clearly in order to discuss the difficulties of measuring the effectiveness of the prophylactic treatment. The aims of this paper are ...

  7. QUALITY OF LIFE IN BIPOLAR DISORDER

    OpenAIRE

    Nieznańska, Anna; Baron, Urszula; Jaracz, Krystyna

    2014-01-01

    Background: Among the consequences of bipolar disorder there i s a decreased quality of life, including the deterioration of patients’ social functioning. Material: The paper contains an analysis of 24 major publica tions from the years 2009 to 2014, including 17 related to the assessment of quality of life and 7 articles on the bipolar patients’ social functioning. Results: There were selected 8 factors which are related with the assessment of the quality of life of persons w...

  8. Behavioral Treatment of Insomnia in Bipolar Disorder

    OpenAIRE

    Kaplan, Katherine A; Harvey, Allison G.

    2013-01-01

    Sleep disturbance is common in bipolar disorder. Stimulus control and sleep restriction are powerful, clinically useful behavioral interventions for insomnia, typically delivered as part of cognitive-behavioral therapy for insomnia (CBT-I). Both involve short-term sleep deprivation. The potential for manic or hypomanic symptoms to emerge after sleep deprivation in bipolar disorder raises questions about the appropriateness of these methods for treating insomnia. In a series of patients with b...

  9. A Review of Bipolar Disorder in Adults

    OpenAIRE

    Hilty, Donald M; Leamon, Martin H.; Lim, Russell F.; Kelly, Rosemary H.; Hales, Robert E.

    2006-01-01

    Objective: This article reviews the epidemiology, etiology, assessment, and management of bipolar disorder. Special attention is paid to factors that complicate treatment, including nonadherence, comorbid disorders, mixed mania, and depression. Methods: A Medline search was conducted from January of 1990 through December of 2005 using key terms of bipolar disorder, diagnosis, and treatment. Papers selected for further review included those published in English in peer-reviewed journals, with ...

  10. Bipolar Saline TURP for Large Prostate Glands

    OpenAIRE

    Finley, David S.; Shawn Beck; Szabo, Richard J.

    2007-01-01

    The objective of this study was to evaluate the feasibility of bipolar transurethral resection of the prostate ( TURP) in patients with very large prostate glands and significant comorbidities. Four patients with prostate glands > 160 cc on preoperative volume measurement and ASA class three or higher underwent bipolar TURP with the Gyrus PlasmaKinetic system. Preoperative, operative, and postoperative parameters were studied. The results showed an average ASA class 3.25 (range: 3-4). The ave...

  11. Bipolar cautery forceps: An economical version

    OpenAIRE

    Appukuttan Aswin; Jagadeesh S

    2007-01-01

    Context: Bipolar cautery forceps are an expensive instrument and especially in Government Medical colleges and Government Hospitals, getting a pair is a very tedious and prolonged task due to official reasons. Aims: To make a cheap and easily obtainable bipolar cautery forceps. Settings and Design: The reason for innovation was that the cautery forceps in the department were out of order and we were not getting replacements. Materials and Methods: Made from condemned and damaged forcep...

  12. Homocysteine and cognitive functions in bipolar depression

    OpenAIRE

    Agnieszka Permoda-Osip; Jacek Kisielewski; Jolanta Dorszewska; Janusz Rybakowski

    2014-01-01

    Objectives The aim of the study was to evaluate a relationship between concentrations of hoocysteine (HCY), vitamin B12 and folic acid and disturbances of cognitive functions during acute episode of bipolar depression. Methods 116 patients were studied (93 women, 23 men), aged 20-78 (mean 51±13) years during acute episode of bipolar depression. Depression was evaluated by the 17-item Hamilton’s Depression Rating Scale (HDRS). The following tests measuring cognitive functions were ap...

  13. Bipolar spectrum: Relevant psychological and biological factors

    OpenAIRE

    Terao, Takeshi

    2012-01-01

    The bipolar spectrum is a concept which bridges bipolar I disorder and unipolar depression. As Kraepelin described, there may be continuity across mood disorders. If this is the case, why should we discriminate for drug choice For example, it is generally accepted that mood stabilizers should be used for the bipolar spectrum, whereas antidepressants are for unipolar depression. If these disorders are diagnostically continuous, it is possible that the same drug could be effective in treating b...

  14. O transtorno bipolar na mulher Bipolar disorder in women

    Directory of Open Access Journals (Sweden)

    Alexandro de Borja Gonçalves Guerra

    2005-01-01

    Full Text Available Diferenças sexuais, descritas em vários transtornos psiquiátricos, também parecem estar presentes no transtorno afetivo bipolar (TAB. A prevalência do TAB tipo I se distribui igualmente entre mulheres e homens. Mulheres parecem estar sujeitas a um risco maior de ciclagem rápida e mania mista, condições que fariam do TAB um transtorno com curso mais prejudicial no sexo feminino. Uma diátese depressiva mais marcante, uso excessivo de antidepressivos e diferenças hormonais surgem como hipóteses para explicar essas diferenças fenomenológicas, apesar das quais, mulheres e homens parecem responder igualmente ao tratamento medicamentoso. A indicação de anticonvulsivantes como primeira escolha em mulheres é controversa, a não ser para o tratamento da mania mista e, talvez, da ciclagem rápida. O tratamento do TAB na gravidez deve levar em conta tanto os riscos de exposição aos medicamentos quanto à doença materna. A profilaxia do TAB no puerpério está fortemente indicada em decorrência do grande risco de recorrência da doença nesse período. Embora, de modo geral, as medicações psicotrópicas estejam contra-indicadas durante a amamentação, entre os estabilizadores do humor, a carbamazepina e o valproato são mais seguros do que o lítio. Mais estudos são necessários para a confirmação das diferenças de curso do TAB entre mulheres e homens e a investigação de possíveis diferenças na efetividade dos tratamentos.Gender differences, described in several psychiatric disorders, seem to be also present in bipolar disorder (BD. The prevalence of bipolar I disorder is equally distributed between women and men. Women seem to be at higher risk for rapid cycling and mixed mania, conditions that could make BD a disorder with a more severe course in the female sex. A marked depressive diathesis among women, greatest use of antidepressants and hormonal differences have been mentioned as hypotheses to explain these

  15. Structural evolution of Ge-rich Si1−xGex films deposited by jet-ICPCVD

    International Nuclear Information System (INIS)

    Amorphous Ge-rich Si1−xGex films with local Ge-clustering were deposited by dual-source jet-type inductively coupled plasma chemical-vapor deposition (jet-ICPCVD). The structural evolution of the deposited films annealed at various temperatures (Ta) is investigated. Experimental results indicate that the crystallization occurs to form Ge and Si clusters as Ta = 500 °C. With raising Ta up to 900 °C, Ge clusters percolate together and Si diffuses and redistributes to form a Ge/SiGe core/shell structure, and some Ge atoms partially diffuse to the surface as a result of segregation. The present work will be helpful in understanding the structural evolution process of a hybrid SiGe films and beneficial for further optimizing the microstructure and properties

  16. Bipolar II compared with bipolar I disorder: baseline characteristics and treatment response to quetiapine in a pooled analysis of five placebo-controlled clinical trials of acute bipolar depression

    OpenAIRE

    Datto, Catherine; Pottorf, William J.; Feeley, Louisa; LaPorte, Scott; Liss, Charlie

    2016-01-01

    Background Bipolar I and II represent the most common and severe subtypes of bipolar disorder. Although bipolar I disorder is relatively well studied, the clinical characteristics and response to treatment of patients with bipolar II disorder are less well understood. Methods To compare the severity and burden of illness of patients with bipolar II versus bipolar I disorder, baseline demographic, clinical, and quality of life data were examined in 1900 patients with bipolar I and 973 patients...

  17. Rumination in bipolar disorder: evidence for an unquiet mind

    Directory of Open Access Journals (Sweden)

    Ghaznavi Sharmin

    2012-01-01

    Full Text Available Abstract Depression in bipolar disorder has long been thought to be a state characterized by mental inactivity. However, recent research demonstrates that patients with bipolar disorder engage in rumination, a form of self-focused repetitive cognitive activity, in depressed as well as in manic states. While rumination has long been associated with depressed states in major depressive disorder, the finding that patients with bipolar disorder ruminate in manic states is unique to bipolar disorder and challenges explanations put forward for why people ruminate. We review the research on rumination in bipolar disorder and propose that rumination in bipolar disorder, in both manic and depressed states, reflects executive dysfunction. We also review the neurobiology of bipolar disorder and recent neuroimaging studies of rumination, which is consistent with our hypothesis that the tendency to ruminate reflects executive dysfunction in bipolar disorder. Finally, we relate the neurobiology of rumination to the neurobiology of emotion regulation, which is disrupted in bipolar disorder.

  18. The development of lurasidone for bipolar depression.

    Science.gov (United States)

    Loebel, Antony; Xu, Jane; Hsu, Jay; Cucchiaro, Josephine; Pikalov, Andrei

    2015-11-01

    Bipolar disorder is a chronic, recurrent illness that ranks among the top 10 causes of disability in the developed world. As the illness progresses, major depressive episodes increasingly predominate. However, few treatment options are available that have demonstrated efficacy in the treatment of bipolar depression, either as monotherapy or adjunctive therapy in combination with mood stabilizers. Lurasidone is an atypical antipsychotic drug that was initially developed for the treatment of schizophrenia. Since no previous atypical antipsychotic development program had proceeded directly from work on schizophrenia to bipolar depression, the decision to focus on this indication represented an innovation in central nervous system drug development and was designed to address a clinically significant unmet need. The current review summarizes key results of a clinical development program undertaken to characterize the efficacy and safety of lurasidone in patients diagnosed with bipolar depression. Lurasidone is currently the only treatment for bipolar depression approved in the United States as both a monotherapy and an adjunctive therapy with lithium or valproate. The approval of lurasidone expands available treatment options for patients with bipolar depression and provides a therapy with an overall favorable risk-benefit profile. PMID:26771990

  19. The role of sleep in bipolar disorder

    Directory of Open Access Journals (Sweden)

    Gold AK

    2016-06-01

    Full Text Available Alexandra K Gold,1 Louisa G Sylvia,1,2 1Department of Psychiatry, Massachusetts General Hospital, 2Harvard Medical School, Boston, MA, USA Abstract: Bipolar disorder is a serious mental illness characterized by alternating periods of elevated and depressed mood. Sleep disturbances in bipolar disorder are present during all stages of the condition and exert a negative impact on overall course, quality of life, and treatment outcomes. We examine the partnership between circadian system (process C functioning and sleep–wake homeostasis (process S on optimal sleep functioning and explore the role of disruptions in both systems on sleep disturbances in bipolar disorder. A convergence of evidence suggests that sleep problems in bipolar disorder result from dysregulation across both process C and process S systems. Biomarkers of depressive episodes include heightened fragmentation of rapid eye movement (REM sleep, reduced REM latency, increased REM density, and a greater percentage of awakenings, while biomarkers of manic episodes include reduced REM latency, greater percentage of stage I sleep, increased REM density, discontinuous sleep patterns, shortened total sleep time, and a greater time awake in bed. These findings highlight the importance of targeting novel treatments for sleep disturbance in bipolar disorder. Keywords: bipolar disorder, circadian rhythms, sleep–wake homeostasis

  20. Attention and psychomotor functioning in bipolar depression.

    Science.gov (United States)

    Burdick, Katherine E; Gunawardane, Nisali; Goldberg, Joseph F; Halperin, Jeffrey M; Garno, Jessica L; Malhotra, Anil K

    2009-04-30

    The objective of this study was to assess psychomotor functioning and attention in individuals with bipolar disorder during the depressed phase of illness. Measures of attention and psychomotor functioning were administered to a sample of 24 bipolar I and II patients and a matched sample of healthy controls. Relative to the healthy controls, the bipolar sample demonstrated evidence of psychomotor slowing and revealed deficits on measures of effortful attention, yet demonstrated comparable performance on measures of automatic attention. In the bipolar sample, we detected significant correlations among measures of psychomotor functioning and some aspects of attention and a strong relationship between the severity of depression and psychomotor functioning, but no direct relationship between attention deficits and depressive symptomatology. These results suggest an attentional impairment during the depressed phase of bipolar disorder that may be specific to effortful processing, while automatic processes remain relatively intact. Associations among indices of attention deficits and psychomotor slowing may be indicative of similarities in the underlying neurobiology of these frequently co-occurring symptom domains in depressed individuals with bipolar disorder. PMID:19272656

  1. Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, M., E-mail: mmoreno@inaoep.mx [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Delgadillo, N. [Universidad Autónoma de Tlaxcala, Av. Universidad No. 1, Z. P. 90006 Tlaxcala (Mexico); Torres, A. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Ambrosio, R. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua (Mexico); Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico)

    2013-12-02

    In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E{sub a}) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ{sub RT}), E{sub a} and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E{sub a}, TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors.

  2. A SiGe BiCMOS double-balanced mixer with active balun for X-band Doppler radar

    DEFF Research Database (Denmark)

    Michaelsen, Rasmus S.; Johansen, Tom K.; Tamborg, Kjeld M.;

    2015-01-01

    In this paper, we present an X-band doublebalanced mixer in SiGe BiCMOS technology. The mixer core consists of a LO Matched quad diode ring using diode-connected Heterojunction Bipolar Transistors (HBTs). The mixer is integrated with a low-noise, high-linearity active balun on the RF port and a m...

  3. Temporal order of bipolar cell genesis in the neural retina

    Directory of Open Access Journals (Sweden)

    Chen C-M Amy

    2008-01-01

    Full Text Available Abstract Background Retinal bipolar cells comprise a diverse group of neurons. Cone bipolar cells and rod bipolar cells are so named for their connections with cone and rod photoreceptors, respectively. Morphological criteria have been established that distinguish nine types of cone bipolar cells and one type of rod bipolar cell in mouse and rat. While anatomical and physiological aspects of bipolar types have been actively studied, little is known about the sequence of events that leads to bipolar cell type specification and the potential relationship this process may have with synapse formation in the outer plexiform layer. In this study, we have examined the birth order of rod and cone bipolar cells in the developing mouse and rat in vivo. Results Using retroviral lineage analysis with the histochemical marker alkaline phosphatase, the percentage of cone and rod bipolar cells born on postnatal day 0 (P0, P4, and P6 were determined, based upon the well characterized morphology of these cells in the adult rat retina. In this in vivo experiment, we have demonstrated that cone bipolar genesis clearly precedes rod bipolar genesis. In addition, in the postnatal mouse retina, using a combination of tritiated-thymidine birthdating and immunohistochemistry to distinguish bipolar types, we have similarly found that cone bipolar genesis precedes rod bipolar genesis. The tritiated-thymidine birthdating studies also included quantification of the birth of all postnatally generated retinal cell types in the mouse. Conclusion Using two independent in vivo methodologies in rat and mouse retina, we have demonstrated that there are distinct waves of genesis of the two major bipolar cell types, with cone bipolar genesis preceding rod bipolar genesis. These waves of bipolar genesis correspond to the order of genesis of the presynaptic photoreceptor cell types.

  4. Nanomechanical morphology of amorphous, transition, and crystalline domains in phase change memory thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bosse, J.L. [Department of Materials Science and Engineering, University of Connecticut, 97 North Eagleville Road, Unit 3136, Storrs, CT 06269-3136 (United States); Grishin, I. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom); Huey, B.D. [Department of Materials Science and Engineering, University of Connecticut, 97 North Eagleville Road, Unit 3136, Storrs, CT 06269-3136 (United States); Kolosov, O.V., E-mail: o.kolosov@lancaster.ac.uk [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2014-09-30

    Highlights: • The nanomechanical morphology of GeTe and Ge{sub 2}Sb{sub 2}Te{sub 5} phase change memory thin films are investigated with combined ultrasonic force microscopy and beam exit Ar ion polishing. • Both plan-view and shallow-angle cross-sections are investigated for each stoichiometry. • Contrast in the nanomechanical response due to stiffness variations between the amorphous and crystalline phases are demonstrated up to 14% and 20% for the normal and cross-sectioned films, respectively. - Abstract: In the search for phase change materials (PCM) that may rival traditional random access memory, a complete understanding of the amorphous to crystalline phase transition is required. For the well-known Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) and GeTe (GT) chalcogenides, which display nucleation and growth dominated crystallization kinetics, respectively, this work explores the nanomechanical morphology of amorphous and crystalline phases in 50 nm thin films. Subjecting these PCM specimens to a lateral thermal gradient spanning the crystallization temperature allows for a detailed morphological investigation. Surface and depth-dependent analyses of the resulting amorphous, transition and crystalline regions are achieved with shallow angle cross-sections, uniquely implemented with beam exit Ar ion polishing. To resolve the distinct phases, ultrasonic force microscopy (UFM) with simultaneous topography is implemented revealing a relative stiffness contrast between the amorphous and crystalline phases of 14% for the free film surface and 20% for the cross-sectioned surface. Nucleation is observed to occur preferentially at the PCM-substrate and free film interface for both GST and GT, while fine subsurface structures are found to be sputtering direction dependent. Combining surface and cross-section nanomechanical mapping in this manner allows 3D analysis of microstructure and defects with nanoscale lateral and depth resolution, applicable to a wide range of

  5. Terapia comportamental cognitiva para pessoas com transtorno bipolar Cognitive behavioral therapy for bipolar disorders

    OpenAIRE

    Francisco Lotufo Neto

    2004-01-01

    Descrição dos objetivos e principais técnicas da terapia comportamental cognitiva usadas para a psicoterapia das pessoas com transtorno bipolar.Objectives and main techniques of cognitive behavior therapy for the treatment of bipolar disorder patients are described.

  6. Subcortical Gray Matter Volume Abnormalities in Healthy Bipolar Offspring: Potential Neuroanatomical Risk Marker for Bipolar Disorder?

    Science.gov (United States)

    Ladouceur, Cecile D.; Almeida, Jorge R. C.; Birmaher, Boris; Axelson, David A.; Nau, Sharon; Kalas, Catherine; Monk, Kelly; Kupfer, David J.; Phillips, Mary L.

    2008-01-01

    A study is conducted to examine the extent to which bipolar disorder (BD) is associated with gray matter volume abnormalities in brain regions in healthy bipolar offspring relative to age-matched controls. Results show increased gray matter volume in the parahippocampus/hippocampus in healthy offspring at genetic risk for BD.

  7. Clinical, Demographic, and Familial Correlates of Bipolar Spectrum Disorders among Offspring of Parents with Bipolar Disorder

    Science.gov (United States)

    Goldstein, Benjamin I.; Shamseddeen, Wael; Axelson, David A.; Kalas, Cathy; Monk, Kelly; Brent, David A.; Kupfer, David J.; Birmaher, Boris

    2010-01-01

    Objective: Despite increased risk, most offspring of parents with bipolar disorder (BP) do not manifest BP. The identification of risk factors for BP among offspring could improve preventive and treatment strategies. We examined this topic in the Pittsburgh Bipolar Offspring Study (BIOS). Method: Subjects included 388 offspring, ages 7-17 years,…

  8. Amorphous carbon for photovoltaics

    Science.gov (United States)

    Risplendi, Francesca; Grossman, Jeffrey C.

    2015-03-01

    All-carbon solar cells have attracted attention as candidates for innovative photovoltaic devices. Carbon-based materials such as graphene, carbon nanotubes (CNT) and amorphous carbon (aC) have the potential to present physical properties comparable to those of silicon-based materials with advantages such as low cost and higher thermal stability.In particular a-C structures are promising systems in which both sp2 and sp3 hybridization coordination are present in different proportions depending on the specific density, providing the possibility of tuning their optoelectronic properties and achieving comparable sunlight absorption to aSi. In this work we employ density functional theory to design suitable device architectures, such as bulk heterojunctions (BHJ) or pn junctions, consisting of a-C as the active layer material.Regarding BHJ, we study interfaces between aC and C nanostructures (such as CNT and fullerene) to relate their optoelectronic properties to the stoichiometry of aC. We demonstrate that the energy alignment between the a-C mobility edges and the occupied and unoccupied states of the CNT or C60 can be widely tuned by varying the aC density to obtain a type II interface.To employ aC in pn junctions we analyze the p- and n-type doping of a-C focusingon an evaluation of the Fermi level and work function dependence on doping.Our results highlight promising features of aC as the active layer material of thin-film solar cells.

  9. Processamento cognitivo "Teoria da Mente" no transtorno bipolar Cognitive "Theory of Mind" processing in bipolar disorder

    Directory of Open Access Journals (Sweden)

    Hélio Anderson Tonelli

    2009-12-01

    Full Text Available OBJETIVO: O transtorno afetivo bipolar está associado ao comprometimento funcional persistente. Apesar de muitas pesquisas demonstrarem que bipolares podem apresentar déficits cognitivos, um número menor de trabalhos avaliou o papel de prejuízos no processamento cognitivo social, a Teoria da Mente (relacionado à capacidade de inferir estados mentais, no aparecimento de sintomas e complicações sociais em bipolares. O objetivo deste trabalho é o de revisar sistemática e criticamente a literatura sobre possíveis alterações do processamento Teoria da Mente no transtorno afetivo bipolar. MÉTODO: Foi realizada uma busca na base de dados Medline por trabalhos publicados em língua inglesa, alemã, espanhola ou portuguesa nos últimos 20 anos, utilizando a frase de busca "Bipolar Disorder"[Mesh] AND "Theory of Mind". Foram procurados por estudos clínicos envolvendo indivíduos bipolares e que empregaram uma ou mais tarefas cognitivas desenvolvidas para a avaliação de habilidades Teoria da Mente. Foram excluídos os relatos de caso e cartas ao editor. A busca inicial resultou em cinco artigos, sendo selecionados quatro. Outros quatro foram também selecionados a partir da leitura dos artigos acima. DISCUSSÃO: Os artigos selecionados avaliaram populações de bipolares adultos e pediátricos, incluindo indivíduos eutímicos, maníacos e deprimidos. A maioria dos trabalhos avaliados sugere que existam prejuízos no processamento Teoria da Mente em portadores de transtorno afetivo bipolar e que estes podem estar por trás dos sintomas e dos déficits funcionais do transtorno afetivo bipolar. CONCLUSÃO: Pesquisas futuras a respeito do tema em questão poderão esclarecer muito acerca do papel das alterações sociocognitivas no surgimento dos sintomas do transtorno afetivo bipolar, bem como ajudar no desenvolvimento de estratégias preventivas e terapêuticas do mesmo.OBJECTIVE: Bipolar disorder is associated to persistent functional

  10. Degradation of SiGe devices by proton irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Ohyama, Hidenori; Hayama, Kiyoteru [Kumamoto National Coll. of Technology, Nishigoshi (Japan); Vanhellemont, J.; Takami, Yasukiyo; Sunaga, Hiromi; Nashiyama, Isamu; Uwatoko, Yoshiya; Poortmans, J.; Caymax, M.

    1997-03-01

    The degradation and recovery behavior of strained Si{sub 1-x}Ge{sub x} diodes and heterojunction bipolar transistors (HBTs) by irradiated by protons are studied. The degradation of device performance and the generation of lattice defects are reported as a function of fluence and germanium content and also compared extensively with previous results obtained on electron and neutron irradiated devices. In order to study the recovery behavior of the irradiated devices, isochronal annealing is performed. The radiation source dependence of the degradation is discussed taking into account the number of knock-on atoms and the nonionizing energy loss (NIEL). (author)

  11. Production of three-dimensional quantum dot lattice of Ge/Si core–shell quantum dots and Si/Ge layers in an alumina glass matrix

    International Nuclear Information System (INIS)

    We report on the formation of Ge/Si quantum dots with core/shell structure that are arranged in a three-dimensional body centered tetragonal quantum dot lattice in an amorphous alumina matrix. The material is prepared by magnetron sputtering deposition of Al2O3/Ge/Si multilayer. The inversion of Ge and Si in the deposition sequence results in the formation of thin Si/Ge layers instead of the dots. Both materials show an atomically sharp interface between the Ge and Si parts of the dots and layers. They have an amorphous internal structure that can be crystallized by an annealing treatment. The light absorption properties of these complex materials are significantly different compared to films that form quantum dot lattices of the pure Ge, Si or a solid solution of GeSi. They show a strong narrow absorption peak that characterizes a type II confinement in accordance with theoretical predictions. The prepared materials are promising for application in quantum dot solar cells. (paper)

  12. Big data for bipolar disorder.

    Science.gov (United States)

    Monteith, Scott; Glenn, Tasha; Geddes, John; Whybrow, Peter C; Bauer, Michael

    2016-12-01

    The delivery of psychiatric care is changing with a new emphasis on integrated care, preventative measures, population health, and the biological basis of disease. Fundamental to this transformation are big data and advances in the ability to analyze these data. The impact of big data on the routine treatment of bipolar disorder today and in the near future is discussed, with examples that relate to health policy, the discovery of new associations, and the study of rare events. The primary sources of big data today are electronic medical records (EMR), claims, and registry data from providers and payers. In the near future, data created by patients from active monitoring, passive monitoring of Internet and smartphone activities, and from sensors may be integrated with the EMR. Diverse data sources from outside of medicine, such as government financial data, will be linked for research. Over the long term, genetic and imaging data will be integrated with the EMR, and there will be more emphasis on predictive models. Many technical challenges remain when analyzing big data that relates to size, heterogeneity, complexity, and unstructured text data in the EMR. Human judgement and subject matter expertise are critical parts of big data analysis, and the active participation of psychiatrists is needed throughout the analytical process. PMID:27068058

  13. On coarse projective integration for atomic deposition in amorphous systems

    Energy Technology Data Exchange (ETDEWEB)

    Chuang, Claire Y., E-mail: yungc@seas.upenn.edu, E-mail: meister@unm.edu, E-mail: zepedaruiz1@llnl.gov; Sinno, Talid, E-mail: talid@seas.upenn.edu [Department of Chemical and Biomolecular Engineering, University of Pennsylvania, 220 South 33rd Street, 311A Towne Building, Philadelphia, Pennsylvania 19104 (United States); Han, Sang M., E-mail: yungc@seas.upenn.edu, E-mail: meister@unm.edu, E-mail: zepedaruiz1@llnl.gov [Department of Chemical and Biological Engineering, University of New Mexico, 1 University of New Mexico, MSC01 1120, Albuquerque, New Mexico 87131 (United States); Zepeda-Ruiz, Luis A., E-mail: yungc@seas.upenn.edu, E-mail: meister@unm.edu, E-mail: zepedaruiz1@llnl.gov [Lawrence Livermore National Laboratory, P.O. Box 808, L-367, Livermore, California 94550 (United States)

    2015-10-07

    Direct molecular dynamics simulation of atomic deposition under realistic conditions is notoriously challenging because of the wide range of time scales that must be captured. Numerous simulation approaches have been proposed to address the problem, often requiring a compromise between model fidelity, algorithmic complexity, and computational efficiency. Coarse projective integration, an example application of the “equation-free” framework, offers an attractive balance between these constraints. Here, periodically applied, short atomistic simulations are employed to compute time derivatives of slowly evolving coarse variables that are then used to numerically integrate differential equations over relatively large time intervals. A key obstacle to the application of this technique in realistic settings is the “lifting” operation in which a valid atomistic configuration is recreated from knowledge of the coarse variables. Using Ge deposition on amorphous SiO{sub 2} substrates as an example application, we present a scheme for lifting realistic atomistic configurations comprised of collections of Ge islands on amorphous SiO{sub 2} using only a few measures of the island size distribution. The approach is shown to provide accurate initial configurations to restart molecular dynamics simulations at arbitrary points in time, enabling the application of coarse projective integration for this morphologically complex system.

  14. On coarse projective integration for atomic deposition in amorphous systems

    International Nuclear Information System (INIS)

    Direct molecular dynamics simulation of atomic deposition under realistic conditions is notoriously challenging because of the wide range of time scales that must be captured. Numerous simulation approaches have been proposed to address the problem, often requiring a compromise between model fidelity, algorithmic complexity, and computational efficiency. Coarse projective integration, an example application of the “equation-free” framework, offers an attractive balance between these constraints. Here, periodically applied, short atomistic simulations are employed to compute time derivatives of slowly evolving coarse variables that are then used to numerically integrate differential equations over relatively large time intervals. A key obstacle to the application of this technique in realistic settings is the “lifting” operation in which a valid atomistic configuration is recreated from knowledge of the coarse variables. Using Ge deposition on amorphous SiO2 substrates as an example application, we present a scheme for lifting realistic atomistic configurations comprised of collections of Ge islands on amorphous SiO2 using only a few measures of the island size distribution. The approach is shown to provide accurate initial configurations to restart molecular dynamics simulations at arbitrary points in time, enabling the application of coarse projective integration for this morphologically complex system

  15. Fundamentals of amorphous solids structure and properties

    CERN Document Server

    Stachurski, Zbigniew H

    2014-01-01

    Long awaited, this textbook fills the gap for convincing concepts to describe amorphous solids. Adopting a unique approach, the author develops a framework that lays the foundations for a theory of amorphousness. He unravels the scientific mysteries surrounding the topic, replacing rather vague notions of amorphous materials as disordered crystalline solids with the well-founded concept of ideal amorphous solids. A classification of amorphous materials into inorganic glasses, organic glasses, glassy metallic alloys, and thin films sets the scene for the development of the model of ideal amorph

  16. Application of Bipolar Fuzzy Sets in Graph Structures

    Directory of Open Access Journals (Sweden)

    Muhammad Akram

    2016-01-01

    Full Text Available A graph structure is a useful tool in solving the combinatorial problems in different areas of computer science and computational intelligence systems. In this paper, we apply the concept of bipolar fuzzy sets to graph structures. We introduce certain notions, including bipolar fuzzy graph structure (BFGS, strong bipolar fuzzy graph structure, bipolar fuzzy Ni-cycle, bipolar fuzzy Ni-tree, bipolar fuzzy Ni-cut vertex, and bipolar fuzzy Ni-bridge, and illustrate these notions by several examples. We study ϕ-complement, self-complement, strong self-complement, and totally strong self-complement in bipolar fuzzy graph structures, and we investigate some of their interesting properties.

  17. A minimum thermodynamic model for the bipolar seesaw

    DEFF Research Database (Denmark)

    Stocker, Thomas F.; Johnsen, Sigfus Johann

    2003-01-01

    Bipolar seesaw, synchronization of Antarctic and Greenland ice cores, Dansgaard-Oeschger events, north-south connection......Bipolar seesaw, synchronization of Antarctic and Greenland ice cores, Dansgaard-Oeschger events, north-south connection...

  18. Immune activation by casein dietary antigens in bipolar disorder

    NARCIS (Netherlands)

    Severance, E.G.; Dupont, D.; Dickerson, F.B.; Stallings, C.R.; Origoni, A.E.; Krivogorsky, B.; Yang, S.; Haasnoot, W.; Yolken, R.H.

    2010-01-01

    Objectives: Inflammation and other immune processes are increasingly linked to psychiatric diseases. Antigenic triggers specific to bipolar disorder are not yet defined. We tested whether antibodies to bovine milk caseins were associated with bipolar disorder, and whether patients recognized differe

  19. Anticonvulsant Drugs for Nerve Pain, Bipolar Disorder and Fibromyalgia

    Science.gov (United States)

    Anticonvulsant Drugs for Nerve Pain, Bipolar Disorder &Fibromyalgia: Choosing What’sRight for You What are anticonvulsant drugs? Anticonvulsants are drugs used to treat seizures. They are also used to treat bipolar ...

  20. Cytokines in bipolar disorder vs. healthy control subjects

    DEFF Research Database (Denmark)

    Munkholm, Klaus; Braüner, Julie Vestergaard; Kessing, Lars Vedel;

    2013-01-01

    Bipolar disorder may be associated with peripheral immune system dysfunction; however, results in individual studies are conflicting. Our aim was to systematically review evidence of peripheral cytokine alterations in bipolar disorder integrating findings from various affective states....

  1. Differences between Depression Episodes of Bipolar Disorder I and II

    Directory of Open Access Journals (Sweden)

    Leman Inanc

    2013-09-01

    Full Text Available In 1975 Fieve and Dunner made the distinction between hypomania and mania as hypomania does not usually cause social and occupational impair-ment and hospitalization is not needed, moreover patients do not experience psychosis. Bipolar disorder type I is defined by the presence of manic and depressive episodes and differs from Bipolar disorder type II characterized with hipomanic and depressive episodes. Bipolar disorder type I and II do not differ in their depressive episodes. It is still point of contention whether bipolar type II is a variant of bipolar disorder type I or is positioned on the spectrum between bipolar type I and unipolar disorder. Even there are some similarities in characteristics of depressive episodes and outcome features of different bipolar disorder subtypes, there are differences that can be useful in differential diagnosis and treatment. This paper aims to focus on those differences between bipolar disorder type I and II.

  2. Lithium Beats Newer Meds for Bipolar Disorder, Study Finds

    Science.gov (United States)

    ... for Treatment and Research of Bipolar Disorder at Zucker Hillside Hospital in Glen Oaks, N.Y., and ... Center for Treatment and Research of Bipolar Disorder, Zucker Hillside Hospital, Glen Oaks, N.Y.; May 11, ...

  3. [Non pharmacological treatment for bipolar disorder].

    Science.gov (United States)

    Mirabel-Sarron, Christine; Giachetti, Raphaël

    2012-12-01

    Bipolar disorder is a chronic and recurring disorder associated with significant psychosocial impairment. A number of psychosocial interventions have been developed to address impairment. The consensus makes mood stabilizer the treatment of bipolar disorder. However, numerous patients are not in complete remission despite a controlled observance. Every patient can follow a psycho educational program. What this paper adds. The review identifies that a range of interventions have demonstrated efficacy in extended periods of euthymia, improved social and occupational functioning and alleviation of subsyndromal symptoms. Adjunctive, short-term psychotherapies have been shown to offer fairly consistent benefits to bipolar disorder patients. Cognitive-behavioural therapy, family-focused therapy, and psychoeducation offer the most robust efficacy in regard to relapse prevention. The most complex situations including comorbidities can be helped by behavioral and cognitive therapy for bipolar disorder. Evaluations emphasize positive impact. The psychosocial interventions reviewed provide mental health nurses with evidence-based approaches to improving mental health care for patients with bipolar disorder. There is a need for mental health nurses to conduct high quality trials of the clinical effectiveness of these interventions. PMID:23395231

  4. Bipolar batteries based on Ebonex ® technology

    Science.gov (United States)

    Loyns, A. C.; Hill, A.; Ellis, K. G.; Partington, T. J.; Hill, J. M.

    Continuing work by Atraverda on the production of a composite-laminate form of the Ebonex ® material, that can be cheaply formulated and manufactured to form substrate plates for bipolar lead-acid batteries, is described. Ebonex ® is the registered trade name of a range of titanium suboxide ceramic materials, typically Ti 4O 7 and Ti 5O 9, which combine electrical conductivity with high corrosion and oxidation resistance. Details of the structure of the composite, battery construction techniques and methods for filling and forming of batteries are discussed. In addition, lifetime and performance data obtained by Atraverda from laboratory bipolar lead-acid batteries and cells are presented. Battery production techniques for both conventional monopolar and bipolar batteries are reviewed. The findings indicate that substantial time and cost savings may be realised in the manufacture of bipolar batteries in comparison to conventional designs. This is due to the fewer processing steps required and more efficient formation. The results indicate that the use of Ebonex ® composite material as a bipolar substrate will provide lightweight and durable high-voltage lead-acid batteries suitable for a wide range of applications including advanced automotive, stationary power and portable equipment.

  5. [Pseudocholinesterase activity in type 1 bipolar patients].

    Science.gov (United States)

    Ezzaher, Asma; Haj Mouhamed, Dhouha; Mechri, Anwar; Neffati, Fadoua; Douki, Wahiba; Gaha, Lotfi; Najjar, Mohamed Fadhel

    2012-01-01

    This study aims to investigate the variation of pseudocholinesterase activity (BuChE) in bipolar patients and to explore its relation to the clinical and therapeutic characteristics of this disease. Our study included 105 patients with bipolar disorder and 100 control subjects aged 38.7 ± 12.2 and 36.4 ± 15.7 y, respectively. BuChE was determined by kinetic methods on Cobas Integra 400 plus™. Compared with controls, patients had a significantly higher pseudocholinesterase activity. Moreover, this increase was significantly associated (p = 0.001) with bipolar disorder with sensibility of 58% and specificity of 62% at threshold of 7392 IU/L. There was no significant change in pseudocholinesterase activity in relation to illness episodes and treatment, whereas the lowest values of this activity were seen in euthymic patients and those taking psychotics. Therefore, this activity is a real interest in the biological monitoring of patients as a risk factor for neurodegenerative diseases associated with bipolar disorder. But it would be most useful to evaluate their interest as a predictor of bipolar disorder in patients at risk. PMID:22294139

  6. QUALITY OF LIFE IN BIPOLAR DISORDER

    Directory of Open Access Journals (Sweden)

    Nieznańska, Anna

    2014-12-01

    Full Text Available Background: Among the consequences of bipolar disorder there i s a decreased quality of life, including the deterioration of patients’ social functioning. Material: The paper contains an analysis of 24 major publica tions from the years 2009 to 2014, including 17 related to the assessment of quality of life and 7 articles on the bipolar patients’ social functioning. Results: There were selected 8 factors which are related with the assessment of the quality of life of persons with a diagnosis of bipolar disorder: the presence of depressive symptoms, substance use, sleep deficit, religious activity and social support, internalized stigma, suicide attempts in the past, the perception of emotions and impulsivity. It was defined that social functioning of bipolar patients is dependent on the emotional state of patients, and in particular the presence of depressive symptoms. It is dependent also on patients’ cognitive performance and internalized stigma. Conclusions: Assistance in mastering the first symptoms of a depressive phase can help bipolar patients in their smooth social functioning and quality of life. Taking into account the implementation of appropriate therapy with cognitive exercise and which is aimed at reducing internalized stigma, may contribute to improving the quality of life and improve the patients’ social functioning.

  7. The role of sleep in bipolar disorder

    Science.gov (United States)

    Gold, Alexandra K; Sylvia, Louisa G

    2016-01-01

    Bipolar disorder is a serious mental illness characterized by alternating periods of elevated and depressed mood. Sleep disturbances in bipolar disorder are present during all stages of the condition and exert a negative impact on overall course, quality of life, and treatment outcomes. We examine the partnership between circadian system (process C) functioning and sleep–wake homeostasis (process S) on optimal sleep functioning and explore the role of disruptions in both systems on sleep disturbances in bipolar disorder. A convergence of evidence suggests that sleep problems in bipolar disorder result from dysregulation across both process C and process S systems. Biomarkers of depressive episodes include heightened fragmentation of rapid eye movement (REM) sleep, reduced REM latency, increased REM density, and a greater percentage of awakenings, while biomarkers of manic episodes include reduced REM latency, greater percentage of stage I sleep, increased REM density, discontinuous sleep patterns, shortened total sleep time, and a greater time awake in bed. These findings highlight the importance of targeting novel treatments for sleep disturbance in bipolar disorder. PMID:27418862

  8. Effect of the addition of Ge to the FINEMET alloy

    International Nuclear Information System (INIS)

    The results obtained by partially substituting Ge for B and Si in the FINEMET alloy for the purpose of improving its magnetic properties at high temperatures are presented in this work. Nanocrystalline ribbons were obtained from controlled crystallization of amorphous material made employing the melt spinning technique. The studied compositions were: Fe73.5Si13.5Ge2Nb3B7Cu1 and Fe73.5Si13.5Ge4Nb3B5Cu1. The structural evolution of these alloys was studied using X-ray diffraction (XRD) and differential scanning calorimetry (DSC) and these results were correlated with their magnetic properties at different annealing temperatures. The coercivity obtained for both alloys was below 1 A/m at anneling temperatures between 773 and 823 K. The amorphous saturation magnetization was satisfactory, almost 137 emu/g, comparable with that obtained for FINEMET alloys. The nanocrystallization and the Curie temperatures are dependent on Ge concentration

  9. Genetic determinants of white matter integrity in bipolar disorder

    OpenAIRE

    Sprooten, Emma

    2012-01-01

    Bipolar disorder is a heritable psychiatric disorder, and several of the genes associated with bipolar disorder and related psychotic disorders are involved in the development and maintenance of white matter in the brain. Patients with bipolar disorder have an increased incidence of white matter hyper-intensities, and quantitative brain imaging studies collectively indicate subtle decreases in white matter density and integrity in bipolar patients. This suggests that genetic vu...

  10. Efficacy of Electroconvulsive Therapy in Bipolar Disorder with Mixed Features

    OpenAIRE

    Miguel Palma; Berta Ferreira; Nuno Borja-Santos; Bruno Trancas; Céu Monteiro; Graça Cardoso

    2016-01-01

    BACKGROUND: The aim of this study was to investigate the effectiveness of electroconvulsive therapy (ECT) in medication-nonresponsive patients with mixed mania and bipolar depression. METHOD: Forty-one patients with mixed mania (DSM-IV diagnosis of bipolar I disorder, most recent episode mixed) and 23 patients with bipolar depression (DSM-IV diagnosis of bipolar I disorder, most recent episode depressed) consecutively assigned to ECT treatment were included in this study. Subjects we...

  11. Electrical coupling between bipolar cells in carp retina

    OpenAIRE

    Kujiraoka, Toru; Saito, Takehiko

    1986-01-01

    Intracellular recordings were made simultaneously from pairs of neighboring bipolar cells by advancing two independent microelectrodes into retinas of carp (Cyprinus carpio). Bipolar cells were identified by their response properties and in several samples were verified by intracellular injection of Lucifer yellow. Current of either polarity injected into one member of the bipolar cell pair elicited a signconserving, sustained potential change in the other bipolar cell without any significant...

  12. Rumination in bipolar disorder: evidence for an unquiet mind

    OpenAIRE

    Ghaznavi Sharmin; Deckersbach Thilo

    2012-01-01

    Abstract Depression in bipolar disorder has long been thought to be a state characterized by mental inactivity. However, recent research demonstrates that patients with bipolar disorder engage in rumination, a form of self-focused repetitive cognitive activity, in depressed as well as in manic states. While rumination has long been associated with depressed states in major depressive disorder, the finding that patients with bipolar disorder ruminate in manic states is unique to bipolar disord...

  13. Experience of Subjective Symptoms in Euthymic Patients with Bipolar Disorder

    OpenAIRE

    Joe, Soohyun; Joo,YeonHo; Kim, Seongyoon

    2008-01-01

    Bipolar patients often experience subjective symptoms even if they do not have active psychotic symptoms in their euthymic state. Most studies about subjective symptoms are conducted in schizophrenia, and there are few studies involving bipolar patients. We examined the nature of the subjective symptoms of bipolar patients in their euthymic state, and we also compared it to that of schizophrenia and normal control. Thirty bipolar patients, 25 patients with schizophrenia, and 21 normal control...

  14. A Review of MR Spectroscopy Studies of Pediatric Bipolar Disorder

    OpenAIRE

    Kondo, D.G.; Hellem, T.L.; Shi, X.-F.; Sung, Y.H.; Prescot, A.P.; Kim, T.S.; Huber, R.S.; Forrest, L.N.; Renshaw, P.F.

    2014-01-01

    Pediatric bipolar disorder is a severe mental illness whose pathophysiology is poorly understood and for which there is an urgent need for improved diagnosis and treatment. MR spectroscopy is a neuroimaging method capable of in vivo measurement of neurochemicals relevant to bipolar disorder neurobiology. MR spectroscopy studies of adult bipolar disorder provide consistent evidence for alterations in the glutamate system and mitochondrial function. In bipolar disorder, these 2 phenomena may be...

  15. The role of lamotrigine in the management of bipolar disorder

    OpenAIRE

    Ng, Felicity; Hallam, Karen; Lucas, Nellie; Berk, Michael

    2007-01-01

    Lamotrigine has emerged with a distinct place in the pharmacological treatment of bipolar disorder, with the potential to treat and prevent bipolar depression, which is the dominant and arguably most disabling and under-treated phase of the illness. This review examines the published clinical trials of lamotrigine in bipolar treatment. While the data supports its tolerability and safety, the strongest evidence for its efficacy lies in the prevention of bipolar depression, with weaker evidence...

  16. TREATMENT OF HYPOTHYROIDISM IS IMPORTANT IN TREATING BIPOLAR AFFECTIVE DISORDER

    OpenAIRE

    Sainath B Reddy; B Deepika; Harish, S

    2014-01-01

    Bipolar affective disorder along with hypothyroidism is well documented. There are few studies regarding hypothyroidism in patients with bipolar affective disorder. Here our main motto is to report such a case who was presented with bipolar affective disorder along with hypothyroidism as a co-morbidity & to provide a brief information regarding association of hypothyroidism in bipolar affective disorder. Treatment approaches in such co-morbid conditions.

  17. Immunocytochemical Evidence that Monkey Rod Bipolar Cells Use GABA

    OpenAIRE

    Lassová, Luisa; Fina, Marie; Sulaiman, Pyroja; Vard, Noga

    2010-01-01

    Certain bipolar cells in most species immunostain for GABA or its synthesizing enzyme, GAD. However it is unknown whether they actually release GABA, and if so, from which cellular compartment, and by what release mechanism. We investigated these questions in monkey retina where rod bipolar cells immunostain for GABA. We found that rod bipolar cells immunostain for one isoform of GAD, GAD65, in their somas, dendrites, and axon terminals. Near the fovea, the somatic stain of rod bipolar cells ...

  18. Epitaxial growth of Ge-Sb-Te based phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Perumal, Karthick

    2013-07-30

    Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb{sub 2}Te{sub 3} thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb{sub 2}Te{sub 3} to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

  19. Epitaxial growth of Ge-Sb-Te based phase change materials

    International Nuclear Information System (INIS)

    Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb2Te3 thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb2Te3 to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

  20. Laser crystallisation of poly-SiGe for microbolometers

    Science.gov (United States)

    Chiussi, S.; Serra, C.; Serra, J.; González, P.; León, B.; Urban, S.; Andrä, G.; Bergmann, J.; Falk, F.; Fabbri, F.; Fornarini, L.; Martelli, S.; Rinaldi, F.

    2002-01-01

    Bolometers based on micromachined poly-SiGe as active elements have recently been demonstrated. The advantage of using poly-SiGe relies on its low thermal conductivity, high coefficient of temperature resistance and perfect compatibility with the IC silicon technology. In order to simplify a device integration of such elements, a combination of laser-assisted low thermal budget techniques such as laser-induced chemical vapour deposition and laser-assisted crystallisation has been proposed. The present paper shows the first results obtained using this "all laser-assisted" process for producing amorphous as well as polycrystalline SiGe alloys and the simulation of the crystallisation processes via numerical analysis for tuning the parameters of the crystallisation process.

  1. Amorphous yttrium-iron alloys

    International Nuclear Information System (INIS)

    The magnetic properties of amorphous yttrium-iron alloys Ysub(1-x)Fesub(x) have been studied over a wide concentration range 0.32 2Fe17 alloys, lead in the amorphous state to spin-glass behaviour and asperomagnetic order. The dominant positive interactions produce short-range ferromagnetic correlations which persist up to room temperature. However magnetic saturation cannot be achieved for any of the alloys in applied fields of up to 180 kOe, indicating that strong negative interactions are also present. Exchange interactions become increasingly positive with increasing x, and the magnetic properties of iron-rich alloys approach those of a normal ferromagnet. (author)

  2. Iron - based bulk amorphous alloys

    Directory of Open Access Journals (Sweden)

    R. Babilas

    2010-07-01

    Full Text Available Purpose: The paper presents a structure characterization, thermal and soft magnetic properties analysis of Fe-based bulk amorphous materials in as-cast state and after crystallization process. In addition, the paper gives some brief review about achieving, formation and structure of bulk metallic glasses as a special group of amorphous materials.Design/methodology/approach: The studies were performed on Fe72B20Si4Nb4 metallic glass in form of ribbons and rods. The amorphous structure of tested samples was examined by X-ray diffraction (XRD, transmission electron microscopy (TEM and scanning electron microscopy (SEM methods. The thermal properties of the glassy samples were measured using differential thermal analysis (DTA and differential scanning calorimetry (DSC. The magnetic properties contained initial and maximum magnetic permeability, coercive force and magnetic after-effects measurements were determined by the Maxwell-Wien bridge and VSM methods.Findings: The X-ray diffraction and transmission electron microscopy investigations revealed that the studied as-cast bulk metallic glasses in form of ribbons and rods were amorphous. Two stage crystallization process was observed for studied bulk amorphous alloy. The differences of crystallization temperature between ribbons and rods with chosen thickness are probably caused by different amorphous structures as a result of the different cooling rates in casting process. The SEM images showed that studied fractures could be classified as mixed fractures with indicated two zones contained “river” and “smooth” areas. The changing of chosen soft magnetic properties (μr, Bs, Hc obtained for samples with different thickness is a result of the non-homogenous amorphous structure of tested metallic glasses. The annealing process in temperature range from 373 to 773 K causes structural relaxation of tested amorphous materials, which leads to changes in their physical properties. The qualitative

  3. Hidden structure in amorphous solids

    Energy Technology Data Exchange (ETDEWEB)

    Inam, F. [Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701 (United States); Lewis, James P. [Department of Physics, West Virginia University, Morgantown, West Virginia 26506 (United States); Drabold, D.A. [Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701 (United States); Trinity College, Cambridge CB2 1TQ (United Kingdom)

    2010-03-15

    Recent theoretical studies of amorphous silicon (a-Si) [Pan et al., Phys. Rev. Lett. 100, 206403 (2008)] have revealed subtle but significant structural correlations in network topology: the tendency for short (long) bonds to be spatially correlated with other short (long) bonds. These structures were linked to the electronic band tails in the optical gap. In this paper, we further examine these issues for a-Si, and demonstrate that analogous correlations exist in amorphous SiO{sub 2}, and in the organic molecule, {beta}-carotene. We conclude with a discussion of the origin of the effects and its possible generality. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  4. The Chemically-Specific Structure of an Amorphous Molybdenum Germanium Alloy by Anomalous X-ray Scattering

    International Nuclear Information System (INIS)

    Since its inception in the late 1970s, anomalous x-ray scattering (AXS) has been employed for chemically-specific structure determination in a wide variety of noncrystalline materials. These studies have successfully produced differential distribution functions (DDFs) which provide information about the compositionally-averaged environment of a specific atomic species in the sample. Despite the wide success in obtaining DDFs, there are very few examples of successful extraction of the fully chemically-specific partial pair distribution functions (PPDFs), the most detailed description of an amorphous sample possible by x-ray scattering. Extracting the PPDFs is notoriously difficult since the matrix equation involved is ill-conditioned and thus extremely sensitive to errors present in the experimental quantities that enter the equation. Instead of addressing this sensitivity by modifying the data through mathematical methods, sources of error have been removed experimentally: A focusing analyzer crystal was combined with a position-sensitive linear detector to experimentally eliminate unwanted inelastic scattering intensity over most of the reciprocal space range probed. This instrumentation has been used in data collection for the extraction of PPDFs from amorphous (a)-MoGe3. This composition arises as a phase separation endpoint in the Ge-rich region of the vapor-deposited Mo-Ge amorphous alloy system but is not present at equilibrium. Since the first Ge-rich compound in the Mo-Ge equilibrium system is MoGe2, previous workers have speculated that perhaps a unique MoGe3 compound exists in the amorphous system. Rather than indicating a distinct MoGe3 compound with definitive local structure, however, the coordination results are more consistent with a densely-packed alloy having a wide range of solid solubility. Significant improvement in the quality and reliability of experimental PPDFs from a-MoGe3 by AXS has been achieved solely through the experimental

  5. Cathodoluminescence of α-quartz after hot Ge ion irradiation

    International Nuclear Information System (INIS)

    The fabrication of Ge-doped light-emitting devices in single-crystal α-quartz without destroying its crystal structure via the dynamic solid phase epitaxial regrowth technique is being pursued. This paper presents results on the cathodoluminescence (CL) after 120 keV Ge implantation in α-quartz at 1173 K with fluences between 1 x 1014 and 1 x 1016 ions/cm2. Rutherford backscattering-channeling analysis showed that the Ge implantation up to 4 x 1014 ions/cm2 produced isolated damage zones. The transition to an amorphous layer is accompanied by a strong increase in the CL output. The CL spectra taken at 10-300 K show six bands located at 260 nm (4.9 eV, UV), 288 nm (4.3 eV, UV), 383 nm (3.1 eV, violet), 453 nm (2.7 eV, blue), 511 nm (2.4 eV, green) and 620 nm (2.0 eV, red). Only the violet band is associated with the Ge-related defects or the formation of Ge-clusters; it reaches its maximum intensity at 7 x 1014 Ge-ions/cm2. All the other bands are connected to various defect centers in the SiO2 network

  6. Family Functioning and the Course of Adolescent Bipolar Disorder

    Science.gov (United States)

    Sullivan, Aimee E.; Judd, Charles M.; Axelson, David A.; Miklowitz, David J.

    2012-01-01

    The symptoms of bipolar disorder affect and are affected by the functioning of family environments. Little is known, however, about the stability of family functioning among youth with bipolar disorder as they cycle in and out of mood episodes. This study examined family functioning and its relationship to symptoms of adolescent bipolar disorder,…

  7. Review of Evidence for Use of Antidepressants in Bipolar Depression

    OpenAIRE

    McInerney, Shane J.; Kennedy, Sidney H.

    2014-01-01

    Objective: Depressive episodes predominate over the course of bipolar disorder and cause considerable functional impairment. Antidepressants are frequently prescribed in the treatment of bipolar depression, despite concerns about efficacy and risk of switching to mania. This review provides a critical examination of the evidence for and against the use of antidepressants in bipolar depression.

  8. Plain carbon steel bipolar plates for PEMFC

    Institute of Scientific and Technical Information of China (English)

    WANG Jianli; SUN Juncai; TIAN Rujin; XU Jing

    2006-01-01

    Bipolar plates are a multifunctional component of PEMFC. Comparing with the machined graphite and stainless steels, the plain carbon steel is a very cheap commercial metal material. In this paper, the possibility of applying the plain carbon steels in the bipolar plate for PEMFC was exploited. In order to improve the corrosion resistance of the low carbon steel in the PEMFCs' environments,two surface modification processes was developed and then the electrochemical performances and interfacial contact resistance (ICR) of the surface modified plate of plain carbon steel were investigated. The results show that the surface modified steel plates have good corrosion resistance and relatively low contact resistance, and it may be a candidate material as bipolar plate of PEMFC.

  9. A nickel-hydrogen bipolar secondary battery

    Science.gov (United States)

    Chireau, R. F.; Berchielli, A. S.

    A study was conducted to test the concept of using bipolar nickel-hydrogen batteries for an energy storage system that would be compatible with both existing and future electrical generation and distribution equipment. The feasibility of a bipolar nickel-hydrogen rechargeable system was investigated with respect to performance characteristics such as charge acceptance, overcharge capability, cell reversal capability, electrolyte management, and cycle life. Peak specific power figures of over 350 W per kilogram were achieved and the specific energy of the bipolar battery was 60 W-hr/kg at the 3 hr rate of discharge. It was concluded that the new energy storage system would be suitable for load-leveling applications.

  10. Kadınlarda Bipolar Bozukluk

    OpenAIRE

    Sermin Kesebir; Leman Inanc; Cigdem Hazal Bezgin; Fatma Cengiz

    2013-01-01

    Bipolar bozuklukta cinsiyetin etkisini araştıran çalışmalar son yıllarda giderek artmaktadır. Karma atak ve disforik durumlar, depresif atak, hızlı döngülülük, mevsimsel gidiş, hipotiroidi, migren ve obezite başta olmak üzere bedensel hastalık eştanısı bipolar bozukluğu olan kadınlarda erkeklerden daha sık görülmektedir. Alkol ve madde kullanım bozukluğu eş tanısı erkek bipolar bozukluk olgularında daha sık olmakla birlikte, kadınlarda alkol ve madde kullanım bozukluğu geliştirme riski, erkek...

  11. Processamento cognitivo "Teoria da Mente" no transtorno bipolar Cognitive "Theory of Mind" processing in bipolar disorder

    OpenAIRE

    Hélio Anderson Tonelli

    2009-01-01

    OBJETIVO: O transtorno afetivo bipolar está associado ao comprometimento funcional persistente. Apesar de muitas pesquisas demonstrarem que bipolares podem apresentar déficits cognitivos, um número menor de trabalhos avaliou o papel de prejuízos no processamento cognitivo social, a Teoria da Mente (relacionado à capacidade de inferir estados mentais), no aparecimento de sintomas e complicações sociais em bipolares. O objetivo deste trabalho é o de revisar sistemática e criticamente a literatu...

  12. Transtorno bipolar do humor e gênero Bipolar affective disorder and gender

    OpenAIRE

    Rodrigo da Silva Dias; Florence Kerr-Corrêa; Ricardo Cezar Torresan; Carlos Henrique R. dos Santos

    2006-01-01

    Embora o transtorno bipolar (TB) ocorra quase igualmente em ambos os sexos, a fenomenologia e o curso da doença diferem no homem e na mulher. No entanto, há evidências de que mulheres bipolares, mais que os homens, apresentariam início mais tardio (em especial na quinta década de vida), ciclagem rápida, mais episódios depressivos, mais mania disfórica que eufórica, estados mistos e evolução do tipo bipolar II, ainda que os achados nem sempre sejam consistentes. Embora o risco de comorbidades ...

  13. Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film

    Science.gov (United States)

    Huang, Ruomeng; Kissling, Gabriela P.; Jolleys, Andrew; Bartlett, Philip N.; Hector, Andrew L.; Levason, William; Reid, Gillian; De Groot, C. H. `Kees'

    2015-11-01

    We report the properties of a series of electrodeposited Ge-Sb-Te alloys with various compositions. It is shown that the Sb/Ge ratio can be varied in a controlled way by changing the electrodeposition potential. This method opens up the prospect of depositing Ge-Sb-Te super-lattice structures by electrodeposition. Material and electrical characteristics of various compositions have been investigated in detail, showing up to three orders of magnitude resistance ratio between the amorphous and crystalline states and endurance up to 1000 cycles.

  14. Amorphous-silicon cell reliability testing

    Science.gov (United States)

    Lathrop, J. W.

    1985-01-01

    The work on reliability testing of solar cells is discussed. Results are given on initial temperature and humidity tests of amorphous silicon devices. Calibration and measurement procedures for amorphous and crystalline cells are given. Temperature stress levels are diagrammed.

  15. Morphological evolution of self-assembled SiGe islands based on a mixed-phase pre-SiGe island layer grown by ion beam sputtering deposition

    International Nuclear Information System (INIS)

    Highlights: • The economical ion beam sputtering deposition technique was employed in this work. • A mixed-phase pre-SiGe island sub-layer was inserted and its effects were identified. • An evolution model of regeneration and secondary growth of islands was proposed. • A new mechanism called “lateral atomic migration” in mixed-phase layer was proposed. • An overlap behavior which was different from the coarsening mechanism was observed. - Abstract: We present a study of the evolution of self-assembled SiGe islands grown on a microcrystalline Si (μc-Si)-based mixed-phase pre-SiGe island layer. Using atomic force microscopy, lots of new short islands with smaller diameters, high islands with transition dome (TD) shape, and super islands with ∼20 nm in height are observed after the Ge layer deposition. This anomalous experimental finding is well clarified by a model of regeneration and secondary growth. It is found that the density of the super islands increases rapidly at the initial stage when the Ge coverage exceeds ∼1.2 nm. This is essentially the result of the selective aggregation of Ge adatoms on the pre-SiGe island layer. The Ge content and stored strain in SiGe islands calculated based on Raman spectra decrease with the increase of the Ge coverage. It is demonstrated that the chemical potential difference-induced lateral atomic migration (LAM) from amorphous SiGe alloy into SiGe islands can be responsible for this phenomenon. The LAM also leads to the formation of very large dome islands. Finally, the overlap behavior of neighbor islands in the sample with 2.2 nm-thick Ge layer is explained by the combined action of denser nucleation centers, faster growth rates of super islands in lateral direction, and coarsening of neighbor small islands

  16. SiGeHBTs on Bonded SOI Incorporating Buried Silicide Layers

    OpenAIRE

    Bain, M.; El Mubarek, H A; Bonar, J. M.; Wang, Y.; Buiu, O.; Gamble, H.; Armstrong, B M; Hemment, P L; Hall, S.; Ashburn, P.

    2005-01-01

    A technology is described for fabricating SiGe hetero-junction bipolar transistors (HBTs) on wafer-bonded silicon-on-insulator (SOI) substrates that incorporate buried tungsten silicide layers for collector resistance reduction or buried groundplanes for crosstalk suppression. The physical structure of the devices is characterized using cross section transmission electron microscopy, and the electrical properties of the buried tungsten silicide layer are characterized using sheet resistance m...

  17. SiGe HBTs on bonded SOI incorporating buried silicide layers

    OpenAIRE

    Bain, M.; El Mubarek, A. W.; Bonar, J. M.; Wang, Y.; Buiu, O.; Gamble, H.; Armstrong, B M; Hemment, P. L. F.; Hall, Steven; Ashburn, Peter

    2005-01-01

    A technology is described for fabricating SiGe heterojunction bipolar transistors (HBTs) on wafer-bonded silicon-on-insulator (SOI) substrates that incorporate buried tungsten silicide layers for collector resistance reduction or buried groundplanes for crosstalk suppression. The physical structure of the devices is characterized using cross section transmission electron microscopy, and the electrical properties of the buried tungsten silicide layer are characterized using sheet resistance me...

  18. SiGe BiCMOS RF ICs and Components for High Speed Wireless Data Networks

    OpenAIRE

    Svitek, Richard M

    2005-01-01

    The advent of high-fT silicon CMOS/BiCMOS technologies has led to a dramatic upsurge in the research and development of radio and microwave frequency integrated circuits (ICs) in silicon. The integration of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) into established "digital" CMOS processes has provided analog performance in silicon that is not only competitive with III-V compound-semiconductor technologies, but is also potentially lower in cost. Combined with improvem...

  19. [Bipolar disorders and self-stigma].

    Science.gov (United States)

    Richard-Lepouriel, H

    2015-09-16

    Despite wide media coverage in recent years, the stigmatization of people with bipolar disorder still exists. Bipolar people also have their own tendency to self-stigmatize that is to integrate their beliefs, prejudices and stigmatizing behaviors. The consequences are important: shame, guilt, withdrawal and renunciation to lead one's own life according to personal values increasing therefore the risk of mood relapses. Self-stigma is rarely assessed in clinical practice and few strategies have been designed to face them efficiently. Recognizing self-stigmatizing beliefs and challenging them are the first steps of this vast endeavour. PMID:26591079

  20. Rumination in bipolar disorder: a systematic review

    OpenAIRE

    Érico de M. Silveira Jr.; Marcia Kauer-Sant'Anna

    2015-01-01

    Objective:To conduct a systematic review of the literature about the symptom of rumination in bipolar disorder (BD).Methods:We searched the MEDLINE (PubMed), ISI Web of Knowledge, PsycINFO, and SciELO databases using the descriptors “rumination” and “bipolar disorder” and no time limits. This strategy yielded 105 references, of which 74 were selected. Inclusion criteria were studies involving patients with BD and the use of at least one validated scale for the assessment of rumination. Review...

  1. Nuclear magnetic resonance studies of tellurium and antimony bonding in crystal Sb2Te3, GeTe, and Ge2Sb2Te5

    International Nuclear Information System (INIS)

    As a starting point in understanding the magnetic resonance data for amorphous Ge2Sb2Te5, the prototypical phase change material, we have used 121Sb and 125Te nuclear magnetic resonance (NMR) to study crystalline Sb2Te3, GeTe, and Ge2Sb2Te5. The frequency space data are affected by a quadrupole (121Sb only) and chemical shift (121Sb and 125Te) interaction, which reflect the bonding asymmetries occurring around each nuclei. The 125Te data indicate there are two distinct Te sites in Sb2Te3 and one Te site in the GeTe, in agreement with the known crystal structures. The Ge2Sb2Te5125Te data are less well-resolved, which is probably a consequence of the random arrangement of Sb/Ge atoms around the Te sites. Despite the lack of resolution, these data do correspond to the spectral positions and breadths observed in Sb2Te3 and GeTe, which suggests that Ge2Sb2Te5 contains similar Te bonding structures. The 121Sb data in Sb2Te3 show that the Sb sites have an approximately axially symmetric bonding environment. The Sb data in Ge2Sb2Te5 reveal that the average bonding structure of Sb is very different from the Sb sites occurring in Sb2Te3. (author)

  2. Synchrotron applications of an amorphous silicon flat-panel detector

    International Nuclear Information System (INIS)

    A GE Revolution 41RT flat-panel detector (GE 41RT) from GE Healthcare (GE) has been in operation at the Advanced Photon Source for over two years. The detector has an active area of 41 cm x 41 cm with 200 (micro)m x 200 (micro)m pixel size. The nominal working photon energy is around 80 keV. The physical set-up and utility software of the detector system are discussed in this article. The linearity of the detector response was measured at 80.7 keV. The memory effect of the detector element, called lag, was also measured at different exposure times and gain settings. The modulation transfer function was measured in terms of the line-spread function using a 25 (micro)m x 1 cm tungsten slit. The background (dark) signal, the signal that the detector will carry without exposure to X-rays, was measured at three different gain settings and with exposure times of 1 ms to 15 s. The radial geometric flatness of the sensor panel was measured using the diffraction pattern from a CeO2 powder standard. The large active area and fast data-capturing rate, i.e. 8 frames s-1 in radiography mode, 30 frames s-1 in fluoroscopy mode, make the GE 41RT one of a kind and very versatile in synchrotron diffraction. The loading behavior of a Cu/Nb multilayer material is used to demonstrate the use of the detector in a strain-stress experiment. Data from the measurement of various samples, amorphous SiO2 in particular, are presented to show the detector effectiveness in pair distribution function measurements

  3. Investigation of Sb diffusion in amorphous silicon

    OpenAIRE

    Csik, A.; Langer, G A; Erdelyi, G.; Beke, D. L.; Erdelyi, Z.; Vad, K.

    2009-01-01

    Amorphous silicon materials and its alloys become extensively used in some technical applications involving large area of the microelectronic and optoelectronic devices. However, the amorphous-crystalline transition, segregation and diffusion processes still have numerous unanswered questions. In this work we study the Sb diffusion into an amorphous Si film by means of Secondary Neutral Mass Spectrometry (SNMS). Amorphous Si/Si1-xSbx/Si tri-layer samples with 5 at% antimony concentration were...

  4. A report on older-age bipolar disorder from the International Society for Bipolar Disorders Task Force

    DEFF Research Database (Denmark)

    Sajatovic, Martha; Strejilevich, Sergio A; Gildengers, Ariel G;

    2015-01-01

    OBJECTIVES: In the coming generation, older adults with bipolar disorder (BD) will increase in absolute numbers as well as proportion of the general population. This is the first report of the International Society for Bipolar Disorder (ISBD) Task Force on Older-Age Bipolar Disorder (OABD). METHODS...

  5. Fracture Phenomena in Amorphous Selenium

    DEFF Research Database (Denmark)

    Lindegaard-Andersen, Asger; Dahle, Birgit

    1966-01-01

    Fracture surfaces of amorphous selenium broken in flexure at room temperature have been studied. The fracture velocity was found to vary in different regions of the fracture surface. Peculiar features were observed in a transition zone between fast and slower fracture. In this zone cleavage steps...

  6. Amorphous metal matrix composite ribbons

    International Nuclear Information System (INIS)

    Composite ribbons with amorphous matrix and ceramic (SiC, WC, MoB) particles were produced by modified planar melt flow casting methods. Weldability, abrasive wear and wood sanding examinations were carried out in order to find optimal material and technology for elevated wear resistance and sanding durability. The correlation between structure and composite properties is discussed. (author)

  7. Atomistic Models of Amorphous Semiconductors

    NARCIS (Netherlands)

    Jarolimek, K.

    2011-01-01

    Crystalline silicon is probably the best studied material, widely used by the semiconductor industry. The subject of this thesis is an intriguing form of this element namely amorphous silicon. It can contain a varying amount of hydrogen and is denoted as a-Si:H. It completely lacks the neat long ran

  8. Sleep disturbances in pediatric bipolar disorder: A comparison between Bipolar I and Bipolar NOS

    Directory of Open Access Journals (Sweden)

    ArgelindaBaroni

    2012-03-01

    Full Text Available Introduction: The diagnosis of Bipolar Disorder (BD in youths has been controversial, especially for the subtype BD Not Otherwise Specified (BD-NOS. In spite of growing evidence that sleep is a core feature of BD, few studies characterize and compare sleep disturbances in youth with BD type I (BD-I and BD-NOS. Sleep disturbances are frequently reported in clinical descriptions of children and adolescents with BD, however the reporting of the frequency and characteristics of sleep symptoms in youth with BD NOS and BD I during episodes remain poor. This study compares symptom of sleep disturbance as occurring in manic and depressive episodes in BD I and BD NOS youth using KSADS-PL interview data. The study also addresses whether symptoms of sleep disturbance vary in different age groups. Material and Methods: The sample consisted of 70 children and adolescent outpatients at an urban specialty clinic (42M/28F, 10.8±3.6 years old including 24 BP-I and 46 BP-NOS assessed using K-SADS-PL-parent interview. Results: Sleep disturbances including insomnia and decreased need for sleep were reported by 84.3% of the sample. Enuresis was diagnosed in 27% of sample. There were no significant differences in frequency of sleep symptoms between BD-I and BD-NOS. Regardless of BD subtype, current functioning was negatively correlated with decreased need for sleep but not insomnia, and regardless of BD subtype. Conclusion: The majority of youth with BD presents with sleep symptoms during mood episodes. BD NOS presents with the same proportion of sleep symptoms as BD I in our sample.

  9. Structural, thermal, and photoacoustic study of nanocrystalline Cr3Ge produced by mechanical alloying

    Science.gov (United States)

    Prates, P. B.; Maliska, A. M.; Ferreira, A. S.; Poffo, C. M.; Borges, Z. V.; de Lima, J. C.; de Biasi, R. S.

    2015-10-01

    A thermodynamic analysis of the Cr-Ge system suggested that it was possible to produce a nanostructured Cr3Ge phase by mechanical alloying. The same analysis showed that, due to low activation energies, Cr-poor crystalline and/or amorphous alloy could also be formed. In fact, when the experiment was performed, Cr11Ge19 and amorphous phases were present for small milling times. For milling times larger than 15 h these additional phases decomposed and only the nanostructured Cr3Ge phase remained up to the highest milling time used (32 h). From the differential scanning calorimetry measurements, the Avrami exponent n was obtained, indicating that the nucleation and growth of the nanostructured Cr3Ge phase may be restricted to one or two dimensions, where the Cr and Ge atoms diffuse along the surface and grain boundaries. In addition, contributions from three-dimensional diffusion with a constant nucleation rate may be present. The thermal diffusivity of the nanostructured Cr3Ge phase was determined by photoacoustic absorption spectroscopy measurements.

  10. Structural, thermal, and photoacoustic study of nanocrystalline Cr{sub 3}Ge produced by mechanical alloying

    Energy Technology Data Exchange (ETDEWEB)

    Prates, P. B.; Maliska, A. M.; Ferreira, A. S. [Departamento de Engenharia Mecânica, Universidade Federal de Santa Catarina, Campus Universitário Trindade, S/N, C.P. 476, 88040-900 Florianópolis, Santa Catarina (Brazil); Poffo, C. M. [Universidade Federal de Santa Catarina, Campus de Araranguá, 88900-000 Araranguá, Santa Catarina (Brazil); Borges, Z. V. [Departamento de Física, Universidade Federal do Amazonas, 3000 Japiim, 69077-000 Manaus, Amazonas (Brazil); Lima, J. C. de, E-mail: fsc1jcd@fisica.ufsc.br [Departamento de Física, Universidade Federal de Santa Catarina, Campus Universitário Trindade, S/N, C.P. 476, 88040-900 Florianópolis, Santa Catarina (Brazil); Biasi, R. S. de [Seção de Engenharia Mecânica e de Materiais, Instituto Militar de Engenharia, 22290-270 Rio de Janeiro (Brazil)

    2015-10-21

    A thermodynamic analysis of the Cr-Ge system suggested that it was possible to produce a nanostructured Cr{sub 3}Ge phase by mechanical alloying. The same analysis showed that, due to low activation energies, Cr-poor crystalline and/or amorphous alloy could also be formed. In fact, when the experiment was performed, Cr{sub 11}Ge{sub 19} and amorphous phases were present for small milling times. For milling times larger than 15 h these additional phases decomposed and only the nanostructured Cr{sub 3}Ge phase remained up to the highest milling time used (32 h). From the differential scanning calorimetry measurements, the Avrami exponent n was obtained, indicating that the nucleation and growth of the nanostructured Cr{sub 3}Ge phase may be restricted to one or two dimensions, where the Cr and Ge atoms diffuse along the surface and grain boundaries. In addition, contributions from three-dimensional diffusion with a constant nucleation rate may be present. The thermal diffusivity of the nanostructured Cr{sub 3}Ge phase was determined by photoacoustic absorption spectroscopy measurements.

  11. Structural, thermal, and photoacoustic study of nanocrystalline Cr3Ge produced by mechanical alloying

    International Nuclear Information System (INIS)

    A thermodynamic analysis of the Cr-Ge system suggested that it was possible to produce a nanostructured Cr3Ge phase by mechanical alloying. The same analysis showed that, due to low activation energies, Cr-poor crystalline and/or amorphous alloy could also be formed. In fact, when the experiment was performed, Cr11Ge19 and amorphous phases were present for small milling times. For milling times larger than 15 h these additional phases decomposed and only the nanostructured Cr3Ge phase remained up to the highest milling time used (32 h). From the differential scanning calorimetry measurements, the Avrami exponent n was obtained, indicating that the nucleation and growth of the nanostructured Cr3Ge phase may be restricted to one or two dimensions, where the Cr and Ge atoms diffuse along the surface and grain boundaries. In addition, contributions from three-dimensional diffusion with a constant nucleation rate may be present. The thermal diffusivity of the nanostructured Cr3Ge phase was determined by photoacoustic absorption spectroscopy measurements

  12. Determination of hydrogen concentration in a-Si and a-Ge layers by elastic recoil detection analysis

    OpenAIRE

    Kh?nh, Nguyen Quoc; Csik, Attila; Serenyi, Miklos; Erd?lyi, Zolt?n; Beke, Dezső L?szl?; Frigeri, Cesare

    2010-01-01

    Hydrogenated amorphous Si and Ge films are of current interest in academic and industrial research due to their unique physical properties and important applications. The passivation of dangling-bonds leads to a significant improvement in the electronic properties by adding hydrogen into these layers. The hydrogen content in these layers is also an important factor deciding the density and the optical band gap. However, hydrogen is also suspected to degrade the performance of amorphous Si and...

  13. Roughening transition in nanoporous hydrogenated amorphous germanium: Roughness correlation to film stress

    Science.gov (United States)

    Carroll, M. S.; Verley, J. C.; Sheng, J. J.; Banks, J.

    2007-03-01

    Hydrogenated amorphous germanium (a-Ge:H) is a material of interest for optoelectronic applications such as solar cells and radiation detectors because of the material's potential to extend the wavelength sensitivity of hydrogenated amorphous silicon (a-Si:H). An increase in porosity is observed in amorphous germanium compared to a-Si :H, and this increase in porosity has been correlated with a degradation of the electrical performance. Improved understanding of the mechanisms of porous formation in a-Ge :H films is therefore desirable in order to better control it. In this paper we describe a correlation between film stress and surface roughness, which evolves with increasing thickness of a-Ge :H. A roughening transition from planar two-dimensional growth to three-dimensional growth at a critical thickness less than 800Å results in a network of needlelike nanotrench cavities which stretch from the transition thickness to the surface in films up to 4000Å thick. Surface roughness measurements by atomic force microscope and transmission electron microscopy indicate that the transition is abrupt and that the roughness increases linearly after the transition thickness. The roughening transition thickness is, furthermore, found to correlate with the maxima of the integrated compressive stress. The compressive stress is reduced after this transition thickness due to the incorporation of nanovoids into the film that introduce tensile stress as the islands coalesce together. The roughening transition behavior is similar to that found in a general class of Volmer-Weber mode thin film deposition (e.g., Cu, Ag, and nonhydrogenated amorphous silicon), which offers additional insight into the underlying mechanisms of the stress and roughening in these a-Ge :H films. The suppression of the roughening transition by changing the kinetics of the deposition rates (e.g., slowing the deposition rate with a weak sputtering bias) is also observed and discussed.

  14. Hydrogenated Amorphous Silicon Germanium Active Layer for Top Cell of a Multi Junction Cell Structure.

    Science.gov (United States)

    Cho, Jaehyun; Iftiquar, S M; Kim, Minbum; Park, Jinjoo; Jung, Junhee; Kim, Jiwoong; Yi, Junsin

    2016-05-01

    Intrinsic hydrogenated amorphous silicon-germanium (a-SiGe:H) alloy is generally used in the bottom cell because of its low band gap. The a-SiGe:H has a higher photo conductivity in comparison to the a-Si:H; thus, it is expected that the a-SiGe:H can show better short circuit current density than that of the a-Si:H based solar cell. Therefore, we optimized a-SiGe:H active layer that can be a suitable choice for the front cell of a multi junction.solar cell. Furthermore, we carried out a comparative study of the solar cells that have a-SiGe:H and a-Si:H as respective active layers. The a-SiGe:H based solar cells show higher short circuit current density, while the a-Si:H based cells show higheropen circuit voltage. The current-voltage characteristics of these cells are as follows: (a) V(oc) = 770 mV, J(sc) = 15.0 mA/cm2, FF = 64.5%, and η = 7.47% for a-SiGe:H based cell; and (b) V(oc) = 826 mV, J(sc) = 13.63 mA/cm2, FF = 72.0%, and η = 8.1% for a-Si:H based cell. PMID:27483837

  15. Clinical variables and implications of the personality on the outcome of bipolar illness: a pilot study

    OpenAIRE

    Casas-Barquero, Nieves; García-López, Olga; Fernández-Argüelles, Pedro; Camacho-Laraña, Manuel

    2007-01-01

    Outcome in bipolar patients is affected by comorbidity. Comorbid personality disorders are frequent and may complicate the course of bipolar illness. This pilot study examined a series of 40 euthymic bipolar patients (DSM-IV criteria) (bipolar I disorder 31, bipolar II disorder 9) to assess the effect of clinical variables and the influence of comorbid personality on the clinical course of bipolar illness. Bipolar patients with a diagnosis of comorbid personality disorder (n = 30) were compar...

  16. BIPOLAR DISORDER AND METABOLIC SYNDROME: COMORBIDITY OR SIDE EFFECTS OF TREATMENT OF BIPOLAR DISORDER

    OpenAIRE

    Babić, Dragan; Maslov, Boris; Nikolić, Katica; Martinac, Marko; Uzun, Suzana; Kozumplik, Oliver

    2010-01-01

    Objective: There is evidence that people with mental disorders are more likely to suffer from metabolic syndrome. In the last decades there has been an increase in interest for researching metabolic syndrome in psychiatric patients and plenty of evidence about their association. However, investigations on the prevalence of metabolic syndrome in patients with bipolar disorder are still surprisingly rare. The aim of this paper is to analyze comorbidity of bipolar disorder and metabolic syndrome...

  17. Commentary on N. Ghaemi's “Hippocratic Psychopharmacology of Bipolar Disorder” Maintenance Treatment in Bipolar Disorder

    OpenAIRE

    Tohen, Mauricio; Lin, Daniel

    2006-01-01

    Bipolar disorder is a chronic recurring condition that is associated with high mortality and severe functional and psychosocial impairments. Treatment strategies that prolong recovery from a mood episode and delay relapse into a new mood episode are essential for long-term improvements in outcomes. Maintenance treatments for bipolar disorder should be evaluated on the strength of the empirical evidence and with the recognition that some treatments may be more effective in preventing relapse i...

  18. Alteración del funcionamiento familiar en el trastorno bipolar Family disruption in bipolar disorder

    OpenAIRE

    Dagmar Holmgren G; Víctor Lermanda S.; Clara Cortés V.; Isabel Cárdenas M.; Karen Aguirre A.; Karem Valenzuela A.

    2005-01-01

    En el curso de los últimos años se ha acumulado abundante evidencia sobre el beneficio de las intervenciones psicosociales en el tratamiento integral del trastorno bipolar. La psicoeducación a pacientes y familiares ha sido reportada por distintos grupos como un medio de reforzar la adherencia al tratamiento. En familias de pacientes bipolares se han descrito alteraciones en el funcionamiento psicosocial intrafamiliar. Nuestro servicio ha desarrollado un programa psicoeducativo aplicando el m...

  19. Is There a Bipolar Prodrome Among Children and Adolescents?

    Science.gov (United States)

    Hunt, Jeffrey; Schwarz, Charlotte M; Nye, Paul; Frazier, Elisabeth

    2016-04-01

    Bipolar disorder in youth substantially impairs behavior, family, and social functioning and interferes with developmental course. There is increasing interest in defining a bipolar prodrome similar to that reported in early-onset psychosis that will allow for earlier intervention and reduction in overall morbidity and mortality. Several lines of research have addressed this important issue including studies of offspring of bipolar parents, high-risk cohorts, and longitudinal follow-up of subjects with major depressive disorder (MDD), ADHD, and bipolar spectrum disorder. The development and validation of bipolar prodrome rating scales also shows promise. Recent attempts to intervene at earlier stages of bipolar disorder have led to some positive outcomes. However, a controversy remains concerning the identification and management of the earliest symptoms. Further research is needed to fully validate a bipolar prodrome and to determine the optimal course of action at various stages of illness. PMID:26893233

  20. Inter-electrode charge collection in high-purity germanium detectors with amorphous semiconductor contacts

    International Nuclear Information System (INIS)

    High-purity germanium (HPGe) radiation detectors with segmented signal readout electrodes combine excellent energy resolution with fine spatial resolution, opening exciting possibilities in radiation imaging applications. Segmenting the electrodes provides the ability to determine the positions of radiation interactions in the detector, but it also brings potential challenges that can inhibit performance. A challenge unique to segmented electrode detectors is collection of charge carriers to the gap between adjacent electrodes rather than to the electrodes themselves, which gives a deficit in the summed energy. While amorphous semiconductor electrical contacts have enabled a simplified fabrication process capable of fine electrode segmentation, the amorphous semiconductor passivation layer between electrodes is prone to inter-electrode charge collection. This article presents a study of the impact of fabrication process parameters on the energy deficit due to inter-electrode charge collection for double-sided strip detectors. Eight double-sided strip HPGe detectors were fabricated with amorphous germanium (a-Ge) and amorphous silicon (a-Si) contacts formed by sputter deposition. Each detector was evaluated for inter-electrode charge collection performance, using as a metric the deficit in the summed signal of two adjacent electrodes. It is demonstrated that both a-Ge and a-Si contacts can be produced with nearly non-existent inter-electrode charge collection when the appropriate combination of sputter gas hydrogen content and gas pressure are selected

  1. Structure and Spatial Distribution of Ge Nanocrystals Subjected to Fast Neutron Irradiation

    Directory of Open Access Journals (Sweden)

    Alexander N. Ionov

    2011-07-01

    Full Text Available The influence of fast neutron irradiation on the structure and spatial distribution of Ge nanocrystals (NC embedded in an amorphous SiO2 matrix has been studied. The investigation was conducted by means of laser Raman Scattering (RS, High Resolution Transmission Electron Microscopy (HR-TEM and X-ray photoelectron spectroscopy (XPS. The irradiation of Ge- NC samples by a high dose of fast neutrons lead to a partial destruction of the nanocrystals. Full reconstruction of crystallinity was achieved after annealing the radiation damage at 8000C, which resulted in full restoration of the RS spectrum. HR-TEM images show, however, that the spatial distributions of Ge-NC changed as a result of irradiation and annealing. A sharp decrease in NC distribution towards the SiO2 surface has been observed. This was accompanied by XPS detection of Ge oxides and elemental Ge within both the surface and subsurface region.

  2. [Psychotherapeutic interventions in bipolar disorder: a review].

    Science.gov (United States)

    Hausmann, Armand; Hörtnagl, Christine; Müller, Markus; Waack, Julie; Walpath, Michaela; Conca, Andreas

    2007-01-01

    The treatment of bipolar disorders is a demanding task involving patients, therapists and relatives. As bipolar disorders are associated to multiple psychosocial disturbances, the management of a bipolar disease should focus on psychosocial interventions. Despite an exploding literature on this topic, psychopharmacological interventions applied as a monotherapy have shown unsatisfactory outcomes. In order to enhance outcome, psychotherapy, such as cognitive behavioural therapy (CBT), psychoeducation, a modified form of interpersonal psychotherapy (IPSRT) or family focussed psychotherapy (FFT) were investigated. When used in conjunction with pharmacotherapy, these interventions may prolong time to relapse, reduce symptom severity, and increase medication adherence. These combinations are currently considered being the golden standard in the treatment of bipolar disorders. Psychotherapeutic interventions as an add-on strategy exert better effects when patients are euthymic at entry. Prevention of manic episodes seems to be more successful as compared to the prevention of depressive episodes. There are currently no hints for a method specific efficacy. Efficacy of psychoeducation seems to be rather short lived. Currently not yet evaluated booster-sessions might help. More data are needed in order to identify patients with a putative good response to psychotherapeutic interventions. PMID:17640496

  3. Bipolar disorder: from genes to behavior pathways

    OpenAIRE

    Martinowich, Keri; Schloesser, Robert J; Manji, Husseini K

    2009-01-01

    Bipolar disorder (BPD) is a devastating illness that is characterized by recurrent episodes of mania and depression. In addition to these cyclic episodes, individuals with BPD exhibit changes in psychovegetative function, cognitive performance, and general health and well being. In this article we draw from neuroimaging findings in humans, postmortem data, and human genetic and pharmacological studies as well as ...

  4. Vacuum interface flashover with bipolar electric fields

    Energy Technology Data Exchange (ETDEWEB)

    Tucker, W.K.; Anderson, R.A.; Hasti, D.E.; Jones, E.E.; Bennett, L.F.

    1985-05-01

    High energy, compact, particle accelerators require accelerating cavities that have large gradients and operate with high efficiency. The bipolar electric fields required in these efficient accelerating cavities place severe requirements on the vacuum interface. Experimentally, we have found that the bipolar flashover field varies as t/sup -1/2/ for times out to 300 ns and then remains essentially constant at 33 kV/cm for longer duration waveforms, whereas materials subjected to unipolar electric fields follow a t/sup -1/6/ relationship. Furthermore, specific accelerating cavities offer enhancements that may be employed to achieve highly uniform electric fields across the vacuum interface. Using these results and the results of a previously developed theory of unipolar flashover, a new interface has been designed and 50 kV/cm bipolar flashover field achieved for a waveform train that lasted 1 ..mu..s. This paper will discuss the design of this vacuum interface and the evaluation of various materials that led to achieving bipolar flashover fields 50% greater than we had previously obtained for long duration waveforms. 10 refs., 6 figs.

  5. Vacuum interface flashover with bipolar electric fields

    International Nuclear Information System (INIS)

    High energy, compact, particle accelerators require accelerating cavities that have large gradients and operate with high efficiency. The bipolar electric fields required in these efficient accelerating cavities place severe requirements on the vacuum interface. Experimentally, we have found that the bipolar flashover field varies as t/sup -1/2/ for times out to 300 ns and then remains essentially constant at 33 kV/cm for longer duration waveforms, whereas materials subjected to unipolar electric fields follow a t/sup -1/6/ relationship. Furthermore, specific accelerating cavities offer enhancements that may be employed to achieve highly uniform electric fields across the vacuum interface. Using these results and the results of a previously developed theory of unipolar flashover, a new interface has been designed and 50 kV/cm bipolar flashover field achieved for a waveform train that lasted 1 μs. This paper will discuss the design of this vacuum interface and the evaluation of various materials that led to achieving bipolar flashover fields 50% greater than we had previously obtained for long duration waveforms. 10 refs., 6 figs

  6. Electrostatic Changes Observed with Narrow Bipolar Pulses

    Science.gov (United States)

    Karunarathne, S.; Marshall, T. C.; Stolzenburg, M.; Karunarathna, N.

    2015-12-01

    Narrow bipolar pulses (NBPs) or compact intracloud discharges are impulsive discharges that are considered to be the strongest natural emitters in the HF radio band; they usually occur at high altitudes in some thunderstorms. In the summer of 2011, we collected E-change data with wideband flat-plate antennas (0.16 Hz - 2.5 MHz) at ten stations covering an area of nearly 70 km x 100 km in and around Kennedy Space Center, Florida, USA. On one thunderstorm day, 14 August 2011, we detected 226 positive NBPs, and some observations of these pulses were published in Karunarathne et al. [2015, JGR-atmospheres]. Of these 226 NBPs, 50 (22.1 %) occurred within 10 km horizontally of at least one sensor. All of these closer sensors show electrostatic changes associated with corresponding NBPs, with a net electrostatic change in the main bipolar pulse and with a slower electrostatic change after the bipolar pulse that seems similar to short continuing current immediately after some cloud-to-ground return strokes. Although NBPs have been considered as short duration pulses (10 - 20 microseconds), the electrostatic changes after the main bipolar pulse ranged from 0.7 ms to 34 ms and associated charge moments were calculated. The total duration of the electrostatic E-change was strongly dependent on the distance to the sensors. In this presentation, we will present data for these electrostatic changes, some statistics, and physical background and reasoning for the electrostatic changes.

  7. Bipolar disorder: Evidence for a major locus

    Energy Technology Data Exchange (ETDEWEB)

    Spence, M.A.; Flodman, P.L. [Univ. of California, Irvine, CA (United States); Sadovnick, A.D.; Ameli, H. [Univ. of British Columbia, Vancouver (Canada)] [and others

    1995-10-09

    Complex segregation analyses were conducted on families of bipolar I and bipolar II probands to delineate the mode of inheritance. The probands were ascertained from consecutive referrals to the Mood Disorder Service, University Hospital, University of British Columbia and diagnosed by DSM-III-R and Research Diagnostic Criteria. Data were available on over 1,500 first-degree relatives of the 186 Caucasian probands. The purpose of the analyses was to determine if, after correcting for age and birth cohort, there was evidence for a single major locus. Five models were fit to the data using the statistical package SAGE: (1) dominant, (2) recessive, (3) arbitrary mendelian inheritance, (4) environmental, and (5) no major effects. A single dominant, mendelian major locus was the best fitting of these models for the sample of bipolar I and II probands when only bipolar relatives were defined as affected (polygenic inheritance could not be tested). Adding recurrent major depression to the diagnosis {open_quotes}affected{close_quotes} for relatives reduced the evidence for a major locus effect. Our findings support the undertaking of linkage studies and are consistent with the analyses of the National Institutes of Mental Health (NIMH) Collaborative Study data by Rice et al. and Blangero and Elston. 39 refs., 4 tabs.

  8. Homocysteine and cognitive functions in bipolar depression

    Directory of Open Access Journals (Sweden)

    Agnieszka Permoda-Osip

    2014-12-01

    The results obtained show higher HCY concentration in considerable proportion of patients with bipolar depression, especially in men. They also confirm a connect between high homocysteine concentration and worse performance in some neuropsychological tests. Such relationship was more marked in men.

  9. Mechanism on bipolar distribution of Permian brachiopods

    Institute of Scientific and Technical Information of China (English)

    Chengwen WANG; Songmei ZHANG

    2008-01-01

    By reasearch on geographic distribution, nine genera in bipolar distribution are selected from Permian brachiopods. These taxa originated from middle-high latitude areas in the boreal realm, of which five genera were derived from Late Carboniferous, and other four genera originated from Permian. They were all in bipolar distribution during some different stages in Permian. Specific diversity for each genus was high in the boreal realm, whereas in the Gondwana realm was very low. Perdurability was long in the boreal realm, and short in the Gondwana realm. It was the time when these nine genera came to their maximum diversity that these genera appeared in the Gondwana and formed bipolar distribution; while they also migrated to the low latitude from high latitude. This shows very close relationship between several main cooling events in Permian and the migration of genera from the boreal realm to the Gondwana realm through the Tethys. Therefore, the cooling events might be the main drive which caused these cold-water-type brachiopods migrated to the Gondwana realm and being bipolar distribution. In this process, the planula tolerance to warm water would be another important factor.

  10. Climatic factors and bipolar affective disorder

    DEFF Research Database (Denmark)

    Christensen, Ellen Margrethe; Larsen, Jens Knud; Gjerris, Annette;

    2008-01-01

    group of patients with at least three previous hospitalizations for bipolar disorder was examined every 3 months for up to 3 years. At each examination an evaluation of the affective phase was made according to the Hamilton Depression Scale (HAM-D(17)), and the Bech-Rafaelsen Mania Rating Scale (MAS...

  11. Udvikling af medicinsk behandling mod bipolar lidelse

    DEFF Research Database (Denmark)

    Ellegaard, Pernille Kempel

    2015-01-01

    Selvom Esbjerg ligger i vandkants Danmark, er det den Psykiatriske Forskningsenhed i denne by, der er primus motor for et stort forsøg blandt mennesker, der lider af bipolar lidelse. Forsøget hedder ”NACOS”, og er et medicinsk forsøg til mennesker, der befinder sig i den depressive fase....

  12. Bipolar high voltage pulse power generator

    Czech Academy of Sciences Publication Activity Database

    Lukeš, Petr; Člupek, Martin; Babický, Václav; Šunka, Pavel

    Monterey, 2005, s. 44. [IEEE International Pulsed Power Conference/15th./. Portola Plaza Hotel, Monterey, CA, USA (US), 13.06.2005-17.06.2005] R&D Projects: GA AV ČR KSK2043105 Keywords : bipolar * pulse power generator * corona discharge Subject RIV: BL - Plasma and Gas Discharge Physics

  13. Ion-beam induced structure modifications in amorphous germanium; Ionenstrahlinduzierte Strukturmodifikationen in amorphem Germanium

    Energy Technology Data Exchange (ETDEWEB)

    Steinbach, Tobias

    2012-05-03

    Object of the present thesis was the systematic study of ion-beam induced structure modifications in amorphous germanium (a-Ge) layers due to low- (LEI) and high-energetic (SHI) ion irradiation. The LEI irradiation of crystalline Ge (c-Ge) effects because the dominating nuclear scattering of the ions on the solid-state atoms the formation of a homogeneous a-Ge Layer. Directly on the surface for fluences of two orders of magnitude above the amorphization fluence the formation of stable cavities independently on the irradiation conditions was observed. For the first time for the ion-beam induced cavity formation respectively for the steady expansion of the porous layer forming with growing fluence a linear dependence on the energy {epsilon}{sub n} deposed in nuclear processes was detected. Furthermore the formation of buried cavities was observed, which shows a dependence on the type of ions. While in the c-Ge samples in the range of the high electronic energy deposition no radiation defects, cavities, or plastic deformations were observed, the high electronic energy transfer in the 3.1 {mu}m thick pre-amorphized a-Ge surface layers leads to the formation of randomly distributed cavities. Basing on the linear connection between cavity-induced vertical volume expansion and the fluence determined for different energy transfers for the first time a material-specific threshold value of {epsilon}{sub e}{sup HRF}=(10.5{+-}1.0) kev nm{sup -1} was determined, above which the ion-beam induced cavity formation in a-Ge sets on. The anisotropic plastic deformation of th a-Ge layer superposed at inclined SHI irradiation on the cavity formation was very well described by an equation derived from the viscoelastic Maxwell model, but modified under regardment of the experimental results. The positive deformation yields determined thereby exhibit above a threshold value for the ion-beam induced plastic deformation {epsilon}{sub e}{sup S{sub a}}=(12{+-}2) keV nm{sup -1} for the first

  14. Effect of Percolation on Structural and Electrical Properties of MIC Processed SiGe/Al Multilayers

    Science.gov (United States)

    Lindorf, M.; Rohrmann, H.; Span, G.; Albrecht, M.

    2016-03-01

    The effect of metal induced crystallization (MIC) is widely used in the production of electronic devices by forming large grained polycrystalline Si from amorphous Si in contact with Al. This effect can also be utilized in conjunction with silicon-germanium (SiGe) alloys and thus provides means of a possible low cost production of future high temperature thermoelectric devices. In this work, sputter deposited multilayer systems of Si80Ge20/Al thin films have been investigated. The effect of MIC is used to crystallize the initially amorphous SiGe while simultaneously doping it with Al. As metallic phases would be detrimental to the thermoelectric performance, special interest is directed to the Al layers and their dissociation during the annealing treatment. A percolation limit regarding the thickness and continuity of the Al layers was found, but no detrimental side effects with respect to the MIC process could be detected.

  15. Synthesis of hafnium germanate (HfGeO4) by co-precipitation routes

    International Nuclear Information System (INIS)

    Hafnium germanate (HfGeO4) presents under X-ray excitation a high UV fluorescence at around 365 nm that may be used for X-ray imaging. Its synthesis by different co-precipitation routes with sodium hydroxide, ammonia, potassium hydroxide, dimethylamin and tetramethylammonium hydroxide was studied. Precipitated amorphous hydroxides were then washed, dried and calcined at 1100deg. C for 6 h to make HfGeO4 crystallize. Hydroxides and oxides were characterized by Fourier transformed infrared spectroscopy, X-ray diffraction and X-ray fluorescence. Hence we could emphasize importance and role of ammonium ions on the structure and optical properties of the synthesized products. More particularly, it has been demonstrated that only amorphous products precipitated in the presence of ammonium ions lead to single-phase HfGeO4

  16. Does the X-chromosome carry the gene responsible for bipolar disorder? An offspring with bipolar disorder and coexisting muscular dystrophy from a mother with bipolar disorder

    OpenAIRE

    tuba gokdogan edgunlu; ibrahim duvarci; esin sakali cetin

    2013-01-01

    According to family, twin and adoption studies, which consistently indicate a strong genetic component, the specific genes that are responsible for bipolar disorder remain unclear. While the mode of transmission is poorly characterized, genetic studies suggest that the X-chromosome may be responsible for bipolar disorder. Muscular dystrophy is an X-chromosome linked recessively inherited disorder. In this case, we present a 35 year-old male with bipolar disorder and coexisting muscular dystro...

  17. Unmet needs of bipolar disorder patients

    Directory of Open Access Journals (Sweden)

    Hajda M

    2016-06-01

    Full Text Available Miroslav Hajda,1 Jan Prasko,1 Klara Latalova,1 Radovan Hruby,2 Marie Ociskova,1 Michaela Holubova,1,3 Dana Kamaradova,1 Barbora Mainerova1 1Department of Psychiatry, Faculty of Medicine and Dentistry, Palacky University Olomouc, University Hospital Olomouc, Olomouc, Czech Republic; 2Outpatient Psychiatric Department, Martin, Slovak Republic; 3Department of Psychiatry, Regional Hospital Liberec, Liberec, Czech Republic Background: Bipolar disorder (BD is a serious mental illness with adverse impact on the lives of the patients and their caregivers. BD is associated with many limitations in personal and interpersonal functioning and restricts the patients’ ability to use their potential capabilities fully. Bipolar patients long to live meaningful lives, but this goal is hard to achieve for those with poor insight. With progress and humanization of society, the issue of patients’ needs became an important topic. The objective of the paper is to provide the up-to-date data on the unmet needs of BD patients and their caregivers. Methods: A systematic computerized examination of MEDLINE publications from 1970 to 2015, via the keywords “bipolar disorder”, “mania”, “bipolar depression”, and “unmet needs”, was performed. Results: Patients’ needs may differ in various stages of the disorder and may have different origin and goals. Thus, we divided them into five groups relating to their nature: those connected with symptoms, treatment, quality of life, family, and pharmacotherapy. We suggested several implications of these needs for pharmacotherapy and psychotherapy. Conclusion: Trying to follow patients’ needs may be a crucial point in the treatment of BD patients. However, many needs remain unmet due to both medical and social factors. Keywords: bipolar disorder, unmet needs, stigma, treatment, medication, quality of life, family, psychotherapy

  18. Effect of Si interface surface roughness to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor

    Science.gov (United States)

    Hasanah, Lilik; Suhendi, Endi; Tayubi, Yuyu Rahmat; Yuwono, Heru; Nandiyanto, Asep Bayu Dani; Murakami, Hideki; Khairrurijal

    2016-02-01

    In this work we discuss the surface roughness of Si interface impact to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor. The Si interface surface roughness can be analyzed from electrical characteristics through the transversal electron velocity obtained as fitting parameter factor. The results showed that surface roughness increase as Ge content of virtual substrate increase This model can be used to investigate the effect of Ge content of the virtual substrate to the interface surface condition through current-voltage characteristic.

  19. Exoelectron analysis of amorphous silicon

    Science.gov (United States)

    Dekhtyar, Yu. D.; Vinyarskaya, Yu. A.

    1994-04-01

    The method based on registration of photothermostimulated exoelectron emission (PTSE) is used in the proposed new field of investigating the structural defects in amorphous silicon (a-Si). This method can be achieved if the sample under investigation is simultaneously heated and illuminated by ultraviolet light. The mechanism of PTSE from a-Si has been studied in the case of a hydrogenized amorphous silicon (a-Si:H) film grown by glow discharge method. The electronic properties and annealing of defects were analyzed in the study. It has been shown from the results that the PTSE from a-Si:H takes place as a prethreshold single-photon external photoeffect. The exoemission spectroscopy of a-Si:H was shown to be capable in the study of thermally and optically stimulated changes in the electronic structure of defects, their annealing, as well as diffusion of atomic particles, such as hydrogen.

  20. Amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.

    2013-04-01

    Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.

  1. A Universal Flying Amorphous Computer

    Czech Academy of Sciences Publication Activity Database

    Petrů, Lukáš; Wiedermann, Jiří

    Berlin: Springer, 2011 - (Calude, C.; Kari, J.; Petre, I.; Rozenberg, G.), s. 189-200. (Lecture Notes in Computer Science. 6714). ISBN 978-3-642-21340-3. ISSN 0302-9743. [UC 2011. Unconventional Computation /10/. Turku (FI), 06.06.2011-10.06.2011] R&D Projects: GA ČR GAP202/10/1333 Institutional research plan: CEZ:AV0Z10300504 Keywords : amorphous computing * model of computation * universality Subject RIV: IN - Informatics, Computer Science

  2. Amorphous silicon based betavoltaic devices

    OpenAIRE

    Wyrsch, N; Riesen, Y.; Franco, A; S. Dunand; Kind, H.; Schneider, S.; Ballif, C.

    2013-01-01

    Hydrogenated amorphous silicon betavoltaic devices are studied both by simulation and experimentally. Devices exhibiting a power density of 0.1 μW/cm2 upon Tritium exposure were fabricated. However, a significant degradation of the performance is taking place, especially during the first hours of the exposure. The degradation behavior differs from sample to sample as well as from published results in the literature. Comparisons with degradation from beta particles suggest an effect of tritium...

  3. Germanene-like defects in amorphous germanium revealed by three-dimensional visualization of high-resolution pair-distribution functions

    Science.gov (United States)

    Tomberli, B.; Rahemtulla, A.; Kim, E.; Roorda, S.; Kycia, S.

    2015-08-01

    The structural description of even the most basic monatomic amorphous materials is under considerable debate. In this work, an intuitive computational technique has been developed to construct three-dimensional statistical density maps to directly visualize local atomic structure of amorphous germanium (a-Ge), enabling the interpretation of recent state-of-the-art experiments and simulations. The continuous random network (CRN) model is compared to our experimental model refined through a Reverse Monte Carlo routine. In this refinement a-Ge has two dominant structures: a fourfold coordinated tetrahedron and a buckled threefold coordinated local structure similar to silicene and germanene. These structures account for 95.7% of the total atoms in a 5:2 ratio respectively. Our method shows well defined structural ordering in the second shell of a-Ge. This novel visualization tool enables the interpretation of complex disordered materials and reveals the bimodal structures of a-Ge.

  4. Structural study of Ge/GaAs thin films

    Science.gov (United States)

    Lazarov, V. K.; Lari, L.; Lytvyn, P. M.; Kholevchuk, V. V.; Mitin, V. F.

    2012-07-01

    Ge/GaAs heterostructure research is largely motivated by the application of this material in solar cells, metal-oxide-semiconductor field-effect transistors, mm-wave mixer diodes, temperature sensors and photodetectors. Therefore, understanding of how the properties of Ge/GaAs heterostructure depend on its preparation (growth) is of importance for various high-efficiency devices. In this work, by using thermal Ge evaporation on GaAs(100), we studied structural properties of these films as a function of the deposition rate. Film grains size and morphology show strong dependence of the deposition rate. Low deposition rates results in films with large crystal grains and rough surface. At high deposition rates films become flatter and their crystal grains size decreases, while at very high deposition rates films become amorphous. Cross-sectional TEM of the films show that the Ge films are granular single crystal epitaxially grown on GaAs. The Ge/GaAs interface is atomically abrupt and free from misfit dislocations. Stacking faults along the [111] directions that originate at the interface were also observed. Finally by using the Kelvin probe microscopy we show that work function changes are related to the grain structure of the film.

  5. Structural modifications of low energy heavy ion irradiated Ge

    International Nuclear Information System (INIS)

    During LEI irradiation of germanium extreme structural changes can be observed. To study the effects and the mechanism of porous layer formation in Ge in more detail samples were irradiated with different ion species, ion energy and angle of incidence. In order to increase the penetration depth, irradiations were performed with ion energies in the range of several MeV. We present ion induced morphological changes in Ge over a wide range of ion fluence NI, beginning with the amorphization process of c-Ge followed by the formation of voids in the amorphous phase and its transformation into a porous structure at high NI. Depending on NI different regimes of porous layer formation are observed (SEM and TEM investigations) and we could demonstrate that the rate of the volume expansion depends only on nuclear energy deposition εn. However, the formation depth of the voids as well as the shape and the dimension of the porous structure depend on the ion species (chemical properties of the irradiated ions) and irradiation temperature, respectively. In addition, for all perpendicular ion irradiations a formation of a microstructure at the surface occurs whereas for non-perpendicular ion irradiation a plastic deformation, i.e. a surface shift, without a microstructure formation was observed. The effect of plastic deformation will be discussed in detail and provides an explanation for the different surface structures observed for different ion incidence.

  6. GeO2 nanorods: synthesis, structural and photoluminescence properties

    International Nuclear Information System (INIS)

    One-dimensional (1D) GeO2 nanorods with smooth surface and uniform diameter throughout their length, are synthesized at a relatively lower temperature by hydrothermal technique in the presence of aluminum foil. Further, the nanorods are doped with rare earth element erbium. The products are characterized by XRD, HRTEM, EDS, FTIR, PL techniques. Synthesized nanorods with diameter in the range ∼60–100 nm have core–shell type structure. HRTEM and EDS results reveal that the crystalline core is made by hexagonal α-quartz type GeO2 and amorphous shell contains compound of Al, Ge and O2. The role of this amorphous outer layer for unidirectional growth of the nanorods is discussed in detail. PL study reveals that the synthesized nanorods are capable of emitting a strong band in the violet–blue region. Furthermore, the product can emit light in the green and red region. The Er-doped nanorods also show luminescence around 1533 nm under non-resonant excitation confirming the successful inclusion of Er3+ ions in the nanorods. Consequently, the as-synthesized materials can be potentially used in a nano-luminescent device in a broad spectrum and as a material of the core in an optical fiber amplifier. (paper)

  7. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui

    2015-04-09

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  8. Abordagens psicoterápicas no transtorno bipolar Psychoterapeutic approach in bipolar disorder

    Directory of Open Access Journals (Sweden)

    Paulo Knapp

    2005-01-01

    Full Text Available Embora o tratamento farmacológico seja essencial para o tratamento do transtorno bipolar, apenas 40% de todos os pacientes que aderem às medicações permanecem assintomáticos durante o período de seguimento, o que tem levado ao desenvolvimento de intervenções psicoterápicas associadas. O objetivo deste artigo é examinar as evidências atuais da eficácia de intervenções psicoterápicas no tratamento do transtorno bipolar. Foi realizada uma pesquisa bibliográfica por meio do MedLine, PsychoINFO, Lilacs e Cochrane Data Bank, até o ano de 2004, em que foram procurados artigos originais e revisões sobre as abordagens psicoterápicas utilizadas no tratamento do transtorno bipolar. Há várias abordagens que podem se mostrar úteis no tratamento do transtorno bipolar. A psicoeducação e a terapia cognitivo-comportamental apresentam as evidências mais consistentes e são as técnicas mais amplamente estudadas. As intervenções envolvendo familiares e a terapia interpessoal e de ritmo social se mostram tratamentos eficazes em determinadas situações. Há alguns estudos empregando a terapia psicodinâmica no transtorno bipolar, mas são estudos com limitações metodológicas. Apesar de haver evidências demonstrando a eficácia de determinadas abordagens psicoterápicas no transtorno bipolar, ainda é necessária a realização de estudos posteriores que comprovem tais dados e que desenvolvam tratamentos baseados em modelos etiológicos e que identifiquem tratamentos específicos para as diferentes fases e tipos de transtorno bipolar.Although pharmacological treatment is essential for treating bipolar disorder, less than half of all medication compliant patients are non-symptomatic during follow-up, which has led to developments of adjunctive psychosocial interventions. This paper examines the current evidence for effectiveness of psychotherapeutic interventions in the treatment of bipolar disorder. Searches were undertaken through Med

  9. Nanoscale manipulation of Ge nanowires by ion hammering

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Samuel T [Los Alamos National Laboratory; Romano, Lucia [UNIV OF FLORIDA; Rudawski, Nicholas G [UNIV OF FLORIDA; Holzworth, Monta R [UNIV OF FLORIDA; Jones, Kevin S [UNIV OF FLORIDA; Choi, S G [NREL

    2009-01-01

    Nanowires generated considerable interest as nanoscale interconnects and as active components of both electronic and electromechanical devices. However, in many cases, manipulation and modification of nanowires are required to realize their full potential. It is essential, for instance, to control the orientation and positioning of nanowires in some specific applications. This work demonstrates a simple method to reversibly control the shape and the orientation of Ge nanowires by using ion beams. Initially, crystalline nanowires were partially amorphized by 30 keY Ga+-implantation. After amorphization, viscous flow and plastic deformation occurred due to the ion hammering effect, causing the nanowires to bend toward the beam direction. The bending was reversed multiple times by ion-implanting the opposite side of the nanowires, resulting in straightening of the nanowires and subsequent bending in the opposite direction. This ion hammering effect demonstrates the detailed manipulation of nanoscale structures is possible through the use of ion irradiation.

  10. Systematic review of the prevalence of bipolar disorder and bipolar spectrum disorders in population-based studies

    Directory of Open Access Journals (Sweden)

    José Caetano Dell'Aglio Jr.

    2013-01-01

    Full Text Available This paper describes the findings of a systematic literature review aimed at providing an overview of the lifetime prevalence of bipolar disorder and bipolar spectrum disorders in population-based studies. Databases MEDLINE, ProQuest, Psychnet, and Web of Science were browsed for papers published in English between 1999 and May 2012 using the following search string: bipolar disorders OR bipolar spectrum disorders AND prevalence OR cross-sectional OR epidemiology AND population-based OR non-clinical OR community based. The search yielded a total of 434 papers, but only those published in peer-reviewed journals and with samples aged ≥ 18 years were included, resulting in a final sample of 18 papers. Results revealed rather heterogeneous findings concerning the prevalence of bipolar disorders and bipolar spectrum disorders. Lifetime prevalence of bipolar disorder ranged from 0.1 to 7.5%, whereas lifetime prevalence of bipolar spectrum disorders ranged from 2.4 to 15.1%. Differences in the rates of bipolar disorder and bipolar spectrum disorders may be related to the consideration of subthreshold criteria upon diagnosis. Differences in the prevalence of different subtypes of the disorder are discussed in light of diagnostic criteria and instruments applied.

  11. Heat capacity of vitreous GeS2

    International Nuclear Information System (INIS)

    Highlights: • Heat capacity for amorphous GeS2 and the basic thermodynamic quantity. • Difference between heat capacity of vitreous and glassy GeS2. • Relation to density of vibrational state/structural relaxation/molar volume. - Abstract: The heat capacity for GeS2 glass was measured by relaxation method, adiabatic calorimetry and DSC from T/K = (2 to 600). Values of the standard molar enthalpy and the standard molar entropy are 12.713 kJ · mol−1 and 88.46 J · K−1 · mol−1, respectively. The molar heat capacity data for GeS2 glass were compared with those reported previously for crystalline α-GeS2. The molar heat capacity of the glass is higher than of the crystal above T = 75 K. However, the molar heat capacity of the glass is lower than that of crystal in the temperature range between (23 and 70) K. This anomaly can probably be attributed to structural differences between vitreous and crystalline state considering that the medium range order of the germanium sulfide glass is similar to that of the crystalline polymorph α-GeS2 although the dimensionality of network is probably higher than 2D. The heat capacity of GeS2 glass obtained by quenching from equilibrium liquid at T = 1270 K is higher than that of the glass resulting from quenching from metastable supercooled liquid within the glass transition range (about 0.2% for 100 < T/K < 200 and 0.4% at T = 50 K). This proves that parameters defining thermal history of the glass (i.e. cooling rate and initial temperature) may affect the value of heat capacity

  12. Rapid Thermal annealing of silicon layers amorphized by ion implantation

    International Nuclear Information System (INIS)

    The recrystallization behavior and the supression mechanisms of the residual defects of silicon layers amorphized by ion implantation, were investigated. The samples were annealed with the aid of a rapid thermal annealing (RTA) system at temperature range from 850 to 12000C, and annealing time up to 120 s. Random and aligned Rutherford backscattering spectroscopy were used to analyse the samples. Similarities in the recrystallization behavior for layers implanted with ions of the same chemical groups such as As or Sb; Ge, Sn or Pb, In or Ga, are observed. The results show that the effective supression of resisual defects of the recrystallired layers is vinculated to the redistribution of impurities via thermal diffusion. (author)

  13. Long-term Treatment in Bipolar Disorder

    Directory of Open Access Journals (Sweden)

    Meliha Zengin Eroglu

    2010-08-01

    Full Text Available Although the importance of long-term prophylactic treatment is certain in bipolar disorder, there is stil debate on how to which patients and evaluate the treatment response. Efficacious long-term treatment can reduce morbidity and mortality significantly and improve quality of life of bipolar patients. The concept of ideal response should also be defined very clearly in order to discuss the difficulties of measuring the effectiveness of the prophylactic treatment. The aims of this paper are to determine whether our currently methods and criteria are valid, reliable and sensitive evaluating the efficacy of the treatment response and to briefly inform the clinicians about the drugs used in pharmacologic prophylaxis in accordance with relevant data.

  14. Bipolar zinc/oxygen battery development

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, S. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Schlatter, C. [Swiss Federal Inst. of Technology, Lausanne (Switzerland)

    1997-06-01

    A bipolar electrically rechargeable Zn/O{sub 2} battery has been developed. Reticulated copper foam served as substrate for the zinc deposit on the anodic side, and La{sub 0.6}Ca{sub 0.4}CoO{sub 3}-catalyzed bifunctional oxygen electrodes were used on the cathodic side of the cells. The 100 cm{sup 2} unit cell had an open circuit voltage of 1,4 V(O{sub 2}) in moderately alkaline electrolyte. The open circuit voltage and the peak power measured for a stack containing seven cells were ca. 10V and 90W, respectively. The current-potential behaviour was determined as a function of the number of bipolar cells, and the maximum discharge capacity was determined at different discharge rates. (author) 4 figs., 1 ref.

  15. Current Propagation in Narrow Bipolar Pulses

    Science.gov (United States)

    Watson, S. S.; Marshall, T. C.

    2005-12-01

    We model the observed electric fields of a particular narrow bipolar pulse (NBP) published in Eack [2004]. We assume an exponential growth of current carriers due to a runaway breakdown avalanche and show that this leads to a corresponding increase in current. With specific input values for discharge altitude, length, current, and propagation velocity, the model does a good job of reproducing the observed near and far electric field. The ability of the model to reproduce the observed electric fields is an indication that our assumptions concerning the runaway avalanche may be correct, and this indication is further strengthened by the inability of the simple transmission line model to reproduce simultaneously both the near and far electric fields. Eack, K. B. (2004), Electrical characteristics of narrow bipolar events, Geophys. Res. Lett., 31, L20102, doi:10.1029/2004/GL021117.

  16. Comorbidity of Asperger's syndrome and Bipolar disorder

    Directory of Open Access Journals (Sweden)

    Azzoni Antonella

    2008-11-01

    Full Text Available Abstract Background and objective Asperger's Syndrome (AS is a pervasive developmental disorder that is sometimes unrecognized, especially in the adult psychiatric setting. On the other hand, in patients with an AS diagnosis, comorbid psychiatric disorders may be unrecognized in the juvenile setting. The aim of the paper is to show and discuss some troublesome and complex problems of the management of patients with AS and comorbid Bipolar Disorder (BD. Methods The paper describes three patients affected by AS and bipolar spectrum disorders. Results and conclusion Mood stabilizers and 2nd generation antipsychotics were effective in the treatment of these AS patients with comorbid BD, while the use of antidepressants was associated with worsening of the mood disorder. It is of importance to recognize both the psychiatric diagnoses in order to arrange an exhaustive therapeutic program and to define specific and realistic goals of treatment.

  17. Subjective experiences in schizophrenia and bipolar disorders.

    Science.gov (United States)

    Arduini, Luca; Kalyvoka, Artemis; Stratta, Paolo; Gianfelice, Daniela; Rinaldi, Osvaldo; Rossi, Alessandro

    2002-02-01

    Studies comparing 'subjective experiences' in schizophrenic and affective disorders have reached inconclusive results. We investigated the pattern of 'subjective perceived cognitive disturbances' in a group of 55 schizophrenic patients and 39 bipolar patients hospitalized for an index psychotic episode. The assessment of the subjective experiences was made using the Frankfurter Beschwerde-Fragebogen (FBF). Comparing the two groups on the four FBF factors, schizophrenic patients showed significantly higher scores in the areas of 'central cognitive disturbances', 'perception and motility' other than a significantly higher FBF total score. Our results suggest that cognitive, perception and motility disturbances are the most characteristic subjective experiences of schizophrenic patients in comparison with bipolar patients. This finding need to be further explored in light of the issue of cognitive dysfunction in schizophrenia. PMID:12056578

  18. Bias in emerging biomarkers for bipolar disorder

    DEFF Research Database (Denmark)

    Carvalho, A F; Köhler, C A; Fernandes, B S;

    2016-01-01

    BACKGROUND: To date no comprehensive evaluation has appraised the likelihood of bias or the strength of the evidence of peripheral biomarkers for bipolar disorder (BD). Here we performed an umbrella review of meta-analyses of peripheral non-genetic biomarkers for BD. METHOD: The Pubmed/Medline, E......BACKGROUND: To date no comprehensive evaluation has appraised the likelihood of bias or the strength of the evidence of peripheral biomarkers for bipolar disorder (BD). Here we performed an umbrella review of meta-analyses of peripheral non-genetic biomarkers for BD. METHOD: The Pubmed......) was observed in 11 meta-analyses. Heterogeneity was high for (I 2 ⩾ 50%) 16 meta-analyses. Only two biomarkers met criteria for suggestive evidence namely the soluble IL-2 receptor and morning cortisol. The median power of included studies, using the effect size of the largest dataset as the plausible...

  19. Optical orientation in bipolar spintronic devices

    International Nuclear Information System (INIS)

    Optical orientation is a highly efficient tool for the generation of nonequilibrium spin polarization in semiconductors. Combined with spin-polarized transport it offers new functionalities for conventional electronic devices, such as pn junction bipolar diodes or transistors. In nominally nonmagnetic junctions optical orientation can provide a source for spin capacitance—the bias-dependent nonequilibrium spin accumulation—or for spin-polarized current in bipolar spin-polarized solar cells. In magnetic junctions, the nonequilibrium spin polarization generated by spin orientation in the proximity of an equilibrium magnetization gives rise to the spin-voltaic effect (a realization of the Silsbee–Johnson coupling), enabling efficient control of electrical properties such as the I–V characteristics of the junctions by magnetic and optical fields. This paper reviews the main results of investigations of spin-polarized and magnetic pn junctions, from spin capacitance to the spin-voltaic effect

  20. Studies of offspring of parents with bipolar disorder.

    Science.gov (United States)

    Chang, Kiki; Steiner, Hans; Ketter, Terence

    2003-11-15

    Children and adolescents who are the biological offspring of individuals with bipolar disorder (BD) (bipolar offspring) represent a population rich in potential for revealing important aspects in the development of BD. Multiple cross-sectional assessments of psychopathology in bipolar offspring have confirmed high incidences of BD, as well as mood and behavioral disorders, and other psychopathology in this population. Longitudinal studies of offspring have begun to shed light on precursors of BD development. Other assessments of bipolar offspring have included dimensional reports of psychiatric and psychosocial functioning, temperament assessments, and descriptions of family environments and parenting styles. Neurobiological studies in bipolar offspring are just beginning to yield findings that may be related to the underlying neuropathophysiology of BD. The future holds promise for longitudinal studies of bipolar offspring incorporating all of these facets, including genetic analyses, to further elucidate the factors involved in the evolution of BD. PMID:14601034

  1. Unmet needs of bipolar disorder patients

    OpenAIRE

    Hajda M; Prasko J; Latalova K; Hruby R; Ociskova M; Holubova M; Kamaradova D; Mainerova B

    2016-01-01

    Miroslav Hajda,1 Jan Prasko,1 Klara Latalova,1 Radovan Hruby,2 Marie Ociskova,1 Michaela Holubova,1,3 Dana Kamaradova,1 Barbora Mainerova1 1Department of Psychiatry, Faculty of Medicine and Dentistry, Palacky University Olomouc, University Hospital Olomouc, Olomouc, Czech Republic; 2Outpatient Psychiatric Department, Martin, Slovak Republic; 3Department of Psychiatry, Regional Hospital Liberec, Liberec, Czech Republic Background: Bipolar disorder (BD) is a serious mental illness with advers...

  2. Bipolar Outflows and the Evolution of Stars

    OpenAIRE

    Frank, Adam

    1998-01-01

    Hypersonic bipolar outflows are a ubiquitous phenomena associated with both young and highly evolved stars. Observations of Planetary Nebulae, the nebulae surrounding Luminous Blue Variables such as $\\eta$ Carinae, Wolf Rayet bubbles, the circumstellar environment of SN 1987A and Young Stellar Objects all revealed high velocity outflows with a wide range of shapes. In this paper I review the current state of our theoretical understanding of these outflows. Beginning with Planetary Nebulae con...

  3. Paired structures and bipolar knowledge representation

    OpenAIRE

    Montero, Javier; Bustince, H.; Franco, C.; Rodríguez, Juan Tinguaro; Gómez, Daniel; Pagola, Miguel; Fernandez, Javier; Barrenechea, Edurne

    2014-01-01

    In this strictly positional paper we propose a general approach to bipolar knowledge representation, where the meaning of concepts can be modelled by examining their decomposition into opposite and neutral categories. In particular, it is the semantic relationship between the opposite categories which suggests the emergence of a paired structure and its associated type of neutrality, being there three general types of neutral categories, namely indeterminacy, ambivalence and conflict. Hence, ...

  4. Olanzapine Discontinuation Emergent Recurrence in Bipolar Disorder

    OpenAIRE

    Manu Arora; Samir Kumar Praharaj

    2014-01-01

    Objective: The efficacy of atypical antipsychotics including olanzapine in acute treatment of manic episode has been established, whereas its role in maintenance treatment is not clear. Materials and Methods: Thirteen patients of bipolar disorder who were on regular treatment with mood stabilizer and subsequently relapsed into mania or depressive episode after discontinuation of olanzapine were studied for various socio-demographic and clinical factors using retrospective chart review. Result...

  5. The Bipolar Quantum Drift-diffusion Model

    Institute of Scientific and Technical Information of China (English)

    Xiu Qing CHEN; Li CHEN

    2009-01-01

    A fourth order parabolic system, the bipolar quantum drift-diffusion model in semiconductor simulation, with physically motivated Dirichlet-Neumann boundary condition is studied in this paper. By semidiscretization in time and compactness argument, the global existence and semiclassical limit are obtained, in which semiclassical limit describes the relation between quantum and classical drift-diffusion models. Furthermore, in the case of constant doping, we prove the weak solution exponentially approaches its constant steady state as time increases to infinity.

  6. Bipolarity and Ambivalence in Landscape Architecture

    OpenAIRE

    Koh, J.

    2010-01-01

    Our discipline of landscape architecture contains bipolarity, not only in terms of landscape and architecture but also because the idea of landscape is both aesthetic and scientific. Furthermore, within landscape architecture there is a gap between design (as implied by architecture) and planning (implying land-use plan and policy orientation) on one hand, and a similar gap between design (associated with artistic activity, concerned with aesthetics as well as science) and research (considere...

  7. Bipolar electrochemistry for high throughput screening applications

    OpenAIRE

    Munktell, Sara

    2016-01-01

    Bipolar electrochemistry is an interesting concept for high throughput screening techniques due to the ability to induce gradients in a range of materials and their properties, such as composition, particle size, or dopant levels, among many others. One of the key advantages of the method is the ability to test, create or modify materials without the need for a direct electrical connection. In this thesis, the viability of this method has been explored for a range of possible applications, su...

  8. Thought Suppression in Patients With Bipolar Disorder

    OpenAIRE

    Miklowitz, David J.; Alatiq, Yousra; Geddes, John R.; Goodwin, Guy M.; Williams, J. Mark G.

    2010-01-01

    Suppression of negative thoughts has been observed under experimental conditions among patients with major depressive disorder (MDD) but has never been examined among patients with bipolar disorder (BD). Patients with BD (n = 36), patients with MDD (n = 20), and healthy controls (n = 20) completed a task that required unscrambling 6-word strings into 5-word sentences, leaving out 1 word. The extra word allowed the sentences to be completed in a negative, neutral, or “hyperpositive” (manic/goa...

  9. Partial Rodent Genetic Models for Bipolar Disorder

    OpenAIRE

    Chen, Guang; Henter, Ioline D.; Manji, Husseini K

    2011-01-01

    Bipolar disorder (BPD) is a complex clinical phenomenon. This episodic illness comprises at least four features/components: depression, mania, vulnerability to mood swings in euthymic BPD patients, and spontaneous cyclicity in at least some BPD patients. Currently, there is no rodent genetic model capable of encompassing the whole phenotype of BPD exists; however, recent genetic-behavioral studies have delineated partial models for some components of BPD, namely, depression, mania, and vulner...

  10. Comorbidity of Asperger's syndrome and Bipolar disorder

    OpenAIRE

    Azzoni Antonella; Raja Michele

    2008-01-01

    Abstract Background and objective Asperger's Syndrome (AS) is a pervasive developmental disorder that is sometimes unrecognized, especially in the adult psychiatric setting. On the other hand, in patients with an AS diagnosis, comorbid psychiatric disorders may be unrecognized in the juvenile setting. The aim of the paper is to show and discuss some troublesome and complex problems of the management of patients with AS and comorbid Bipolar Disorder (BD). Methods The paper describes three pati...

  11. Bipolar high voltage pulse power generator

    Czech Academy of Sciences Publication Activity Database

    Lukeš, Petr; Člupek, Martin; Babický, Václav; Šunka, Pavel

    Monterey : IEEE, 2007 - (Maenchen, J.; Schamiloglu, E.), s. 1061-1064 ISBN 0-7803-9190-X. [IEEE International Pulsed Power Conference/15th./. Portola Plaza Hotel, Monterey (US), 13.06.2005-17.06.2005] R&D Projects: GA AV ČR KSK2043105 Institutional research plan: CEZ:AV0Z20430508 Keywords : bipolar * pulse power generator * corona discharge Subject RIV: BL - Plasma and Gas Discharge Physics

  12. Circadian secretion of cortisol in bipolar disorder

    Science.gov (United States)

    Cervantes, Pablo; Gelber, Stephen; Kin, François; Nair, Vasavan N.P.; Schwartz, George

    2001-01-01

    Objective To compare the 24-h cortisol secretion profiles of normal control subjects and patients with bipolar disorder who were in the depressive, manic and euthymic phases of the disorder. Participants Eighteen patients, 25–62 years of age, in depressed (n = 5), manic (n = 5) or euthymic (n = 8) phase of bipolar disorder recruited through a psychiatric outpatient clinic, and 5 control subjects, 24–41 years of age, recruited through advertisement or word of mouth. Outcome measures Subjects were interviewed and symptom ratings were obtained using the Hamilton Depression Rating Scale, Beck Depression Inventory and Young Mania Scale. Blood collection began at 0800 and continued at hourly intervals for 24 h. Serum cortisol levels were assayed using a validated commercial radioimmunoassay kit. Results An analysis of variance of the area under the cortisol 24-h time-concentration curve (AUC) revealed a significant difference between the control group and patient groups (F = 3.69, p = 0.03). The mean AUCs of the patients in the depressed (263.4 μg/dL) and hypomanic (262.2 μg/dL) phases were beyond the 95% confidence interval for the controls (120.9–253.3 μg/dL). There were no significant group differences in cosinor acrophase and no significant effects of sex, education, age of illness onset, duration of illness or duration of mood state at time of testing on the cortisol measures. Pearson correlations between symptom rating scores and cortisol secretion variables were not significant. Conclusion The increases in cortisol secretion in patients in both the depressed and manic phases of bipolar disorder suggest that cortisol level is probably not a state marker in bipolar disorder. PMID:11762208

  13. Suicide attempts and clinical features of bipolar patients

    OpenAIRE

    Berkol, Tonguç D.; İslam, Serkan; Kırlı, Ebru; Pınarbaşı, Rasim; Özyıldırım, İlker

    2016-01-01

    Objectives: To identify clinical predictors of suicide attempts in patients with bipolar disorder. Methods: This study included bipolar patients who were treated in the Psychiatry Department, Haseki Training and Research Hospital, Istanbul, Turkey, between 2013 and 2014; an informed consent was obtained from the participants. Two hundred and eighteen bipolar patients were assessed by using the structured clinical interview for Diagnostic and Statistical Manual of Mental Disorders, 4th edition...

  14. Quetiapine: A Pharmacoeconomic Review of its Use in Bipolar Disorder

    OpenAIRE

    Greg L. Plosker

    2012-01-01

    This article briefly summarizes the burden of bipolar disorder and the clinical profile of quetiapine (Seroquel) in the management of bipolar disorder, followed by a detailed review of pharmacoeconomic analyses. Quetiapine is an atypical antipsychotic that is available in numerous countries as immediate-release and extended-release tablets for the treatment of major psychiatric disorders, including bipolar disorder. Randomized, double-blind, placebo-controlled trials with quetiapine have demo...

  15. Binary hypotheses for bipolar mass loss in transients

    OpenAIRE

    Fitzpatrick, Benedict John Russell; Podsiadlowski, Philipp

    2012-01-01

    We investigate binary hypotheses for the formation of bipolar nebulae using the smoothed particle hydrodynamics code Gadget-2. In the general case, we present a parameter study of mass loss from very simple common envelope models, which seems to show a strongly bipolar trend for sufficiently oblate envelopes and low enough spiral-in injection energy. The density profiles of the envelopes produce differing structure within the ejecta. We also investigate 3 specific bipolar ma...

  16. The psychoeducational impact on cognitive inhibition among euthymic bipolar patients

    OpenAIRE

    Novak, Tatjana

    2010-01-01

    Across all mood phases of bipolar disorder emotional dysregulation, attentional and cognitive control deficits are being consistently observed. Despite the efficacy of psychoeducational (PE) approaches in stabilising and preventing mood episodes in bipolar disorder, no published studies directly examined the impact of psychosocial interventions on cognition of bipolar patients. Our aim was twofold: to assess the impact of PE intervention on cognitive inhibition measures and to examine emotion...

  17. Family Environment and Suicidal Ideation Among Bipolar Youth

    OpenAIRE

    Goldstein, Tina R; Birmaher, Boris; Axelson, David; Goldstein, Benjamin I.; Gill, Mary Kay; Esposito-Smythers, Christianne; Ryan, Neal D.; Strober, Michael A.; Hunt, Jeffrey; Keller, Martin

    2009-01-01

    The objective of this study was to examine the association between family environment and suicidal ideation among youth with bipolar disorder. Subjects included 446 bipolar (BP) youth (age 7–17) enrolled in the Course and Outcome of Bipolar Youth study. Current suicidal ideation, family functioning and family stress were assessed at intake. BP youth with current suicidal ideation reported more conflict with their mother and less family adaptability. Ideators endorsed more stressful family eve...

  18. Commercialization of Fuel Cell Bipolar Plate Manufacturing by Electromagnetic Forming

    OpenAIRE

    Daehn, G. S.; Hatkevich, S.; Shang, J.; Wilkerson, L.

    2010-01-01

    The cost of manufacturing bipolar plates is a major component to the overall cost structure of a Proton Exchange Membrane (PEM) fuel cell stack. To achieve the commercialization of PEM fuel cells, a high volume and low cost manufacturing process for the bipolar plate must be developed. American Trim has identified high velocity electromagnetic forming as a suitable technology to manufacture metallic fuel cell bipolar plates, because of its low capital cost, flexible tooling and rapid prototyp...

  19. Bipolar Disorder: What Can Psychotherapists Learn From the Cognitive Research?

    OpenAIRE

    Johnson, Sheri; Tran, Tanya

    2007-01-01

    Randomized controlled trials of psychological treatment, principally cognitive therapy, for bipolar disorder have yielded inconsistent results. Given the status of this evidentiary base, we provide a more fine-grained analysis of the cognitive profiles associated with bipolar disorder to inform clinical practice. In this practice-friendly review, we consider evidence that both negative and positive cognitive styles are related to bipolar disorder. Cross-sectional and prospective evidence sugg...

  20. Valproate in Bipolar Disorder: Case Examples From a Family Practice

    OpenAIRE

    Manning, J. Sloan

    1999-01-01

    Valproate, an antiepileptic drug, is useful in the management of various nonepileptic disorders. It is an effective and generally well-tolerated medication for the treatment of bipolar disorder and has been approved by the Food and Drug Administration for use in manic states. Studies also suggest that it is effective in other bipolar spectrum illnesses. This report describes 2 clinical cases of DSM-IV bipolar disorder where valproate provided robust, sustained relief of mood symptoms. In the ...

  1. Altered Neurochemical Ingredient of Hippocampus in Patients with Bipolar Depression

    OpenAIRE

    Murad Atmaca; Hanefi Yildirim

    2012-01-01

    Background. In a number of investigations, hippocampal neurochemicals were evaluated in the patients with bipolar disorder who were on their first episode or euthymic periods. However, we did not meet any investigation in which only patients with bipolar depression were examined. As a consequence, the objective of the present study was to examine both sides of hippocampus of patients with bipolar disorder in depressive episode and healthy controls using 1H-MRS. Methods. Thirteen patients with...

  2. Treating bipolar disorder. Evidence-based guidelines for family medicine.

    OpenAIRE

    McIntyre, Roger S; Mancini, Deborah A.; Lin, Peter; Jordan, John

    2004-01-01

    OBJECTIVE: To provide an evidence-based summary of medications commonly used for bipolar disorders and a practical approach to managing bipolar disorders in the office. QUALITY OF EVIDENCE: Articles from 1990 to 2003 were selected from MEDLINE using the key words "bipolar disorder," "antiepileptics," "antipsychotics," "antidepressants," and "mood stabilizers." Good-quality evidence for many of these treatments comes from randomized trials. Lithium, divalproex, carbamazepine, lamotrigine, oxca...

  3. Bipolar disorder and metabolic syndrome: a systematic review

    OpenAIRE

    Letícia Czepielewski; Ledo Daruy Filho; Elisa Brietzke; Rodrigo Grassi-Oliveira

    2013-01-01

    OBJECTIVE: Summarize data on metabolic syndrome (MS) in bipolar disorder (BD). METHODS: A systematic review of the literature was conducted using the Medline, Embase and PsycInfo databases, using the keywords "metabolic syndrome", "insulin resistance" and "metabolic X syndrome" and cross-referencing them with "bipolar disorder" or "mania". The following types of publications were candidates for review: (i) clinical trials, (ii) studies involving patients diagnosed with bipolar disorder or (ii...

  4. The Neurobiology of Bipolar Disorder: An Integrated Approach

    OpenAIRE

    Muneer, Ather

    2016-01-01

    Bipolar disorder is a heterogeneous condition with myriad clinical manifestations and many comorbidities leading to severe disabilities in the biopsychosocial realm. The objective of this review article was to underline recent advances in knowledge regarding the neurobiology of bipolar disorder. A further aim was to draw attention to new therapeutic targets in the treatment of bipolar disorder. To accomplish these goals, an electronic search was undertaken of the PubMed database in August 201...

  5. Broadening the diagnosis of bipolar disorder: benefits vs. risks

    OpenAIRE

    Strakowski, Stephen M.; Fleck, David E.; MAJ, MARIO

    2011-01-01

    There is considerable debate over whether bipolar and related disorders that share common signs and symptoms, but are currently defined as distinct clinical entities in DSM-IV and ICD-10, may be better characterized as falling within a more broadly defined “bipolar spectrum”. With a spectrum view in mind, the possibility of broadening the diagnosis of bipolar disorder has been proposed. This paper discusses some of the rationale for an expanded diagnostic scheme from both cl...

  6. The Bipolar Interactive Psychoeducation (BIPED) study: trial design and protocol

    OpenAIRE

    Jones Ian; Craddock Nick; Cohen David; Hood Kerry; Griffiths Emily; Barnes Emma; Simpson Sharon; Smith Daniel J

    2009-01-01

    Abstract Background Bipolar disorders affect between 3–5% of the population and are associated with considerable lifelong impairment. Since much of the morbidity associated with bipolar disorder is caused by recurrent depressive symptoms, which are often only poorly responsive to antidepressants, there is a need to develop alternative, non-pharmacological interventions. Psychoeducational interventions have emerged as promising long-term therapeutic options for bipolar disorder. Methods/design...

  7. Bipolar Bozukluk Obsesif Kompulsif Bozukluk Birlikteliği

    OpenAIRE

    Necla Keskin; Lut Tamam

    2014-01-01

    The comorbidity of bipolar disorder and anxiety disorders is a well known concept. Obsessive-compulsive disorder is the most commonly seen comorbid anxiety disorder in bipolar patients. Some genetic variants, neurotransmitters especially serotonergic systems and second-messenger systems are thought to be responsible for its etiology. Bipolar disorder alters the clinical aspects of obsessive compulsive disorder and is associated with poorer outcome. The determination of comorbidity between bip...

  8. Undiagnosed Bipolar Disorder: New Syndromes and New Treatments

    OpenAIRE

    Glick, Ira D.

    2004-01-01

    Recent studies have indicated that bipolar disorder is more common than previously believed. The socioeconomic and personal burdens of this illness are significant, and the lifetime risk of suicide attempts by patients with bipolar II disorder is high. It is not uncommon for patients with bipolar disorder, especially those presenting with depression, to be seen first in a primary care setting; therefore, primary care physicians need to be ready to diagnose and manage patients with these menta...

  9. Cognitive impairment in manic bipolar patients: important, understated, significant aspects

    OpenAIRE

    Vrabie, Mădălina; Marinescu, Victor; Talaşman, Anca; Tăutu, Oana; Drima, Eduard; Micluţia, Ioana

    2015-01-01

    Background Bipolar disorder is a chronic mood disorder with episodic progress and high relapse rate. Growing evidence suggests that individuals with bipolar disorder display cognitive impairment which persists even throughout periods of symptom's remission. Method 137 bipolar patients met the inclusion criteria (depressive episode: DSM-IV-TR criteria for major depressive episode, HAMD score ≥17; manic/hypomanic episode: DSM-IV-TR criteria for manic/hypomanic episode, YMRS score ≥12, euthymic:...

  10. Symptom severity of bipolar disorder during the menopausal transition

    OpenAIRE

    Marsh, Wendy K.; Gershenson, Bernice; Rothschild, Anthony J.

    2015-01-01

    Background Little is known about the mood symptom experience of women with bipolar disorder during the menopausal transition (MT). Yet times of rapid hormonal decline, such as the postpartum, are associated with increased risk of severe mood episodes in bipolar disorder, and the MT is a time of increased risk for unipolar depression in women with or without a history of depression. Methods Enrollment included 56 women 40–60 years old diagnosed in the bipolar spectrum who were experiencing men...

  11. Current and Emerging Therapies for the Management of Bipolar Disorders

    OpenAIRE

    El-Mallakh, Rif S; Elmaadawi, Ahmed Z.; Yonglin Gao; Kavita Lohano; R. Jeannie Roberts

    2011-01-01

    Bipolar disorder is a complex condition to treat because agents that may be effective for a specific phase may not be effective for other phases, or may even worsen the overall course of the illness. Over the last decade there has been an increase in research activity in the treatment of bipolar illness. There are now several agents that are well established for the treatment of acute mania (lithium, divalproex, carbamazepine, nearly all antipsychotics), acute bipolar depression (lamotrigine,...

  12. The relationship between borderline personality disorder and bipolar disorder

    OpenAIRE

    Zimmerman, Mark; Morgan, Theresa A

    2013-01-01

    It is clinically important to recognize both bipolar disorder and borderline personality disorder (BPD) in patients seeking treatment for depression, and it is important to distinguish between the two. Research considering whether BPD should be considered part of a bipolar spectrum reaches differing conclusions. We reviewed the most studied question on the relationship between BPD and bipolar disorder: their diagnostic concordance. Across studies, approximately 10% of patients with BPD had bi...

  13. Bipolarna motnja razpoloženja: Bipolar disorder:

    OpenAIRE

    Dernovšek, Mojca Zvezdana; Frangeš, Tadeja

    2013-01-01

    Bipolar disorder is very prevalent in general population. According to Diagnostic and statistical manual ofmental disorders, fourth revision - DSM-IV, four types ofbipolar disorder are distinguished: bipolar disorder 1, bipolar disorder II, cyclothymia, and other types (not specified otherwise). Etiology of disorder is multifactorial with overlap between genetic, environmental"and neurobiological factors. Due to complexity of clinical features it represents diagnostical and therapeutical chal...

  14. Sex Dependence of Cognitive Functions in Bipolar Disorder

    OpenAIRE

    Aleksandra Suwalska; Dorota Łojko

    2014-01-01

    The objective of the present study was to assess the performance of lithium treated euthymic bipolar patients in tests measuring spatial working memory (SWM), planning, and verbal fluency and to delineate the influence of gender on cognitive functioning. Fifty-nine euthymic bipolar patients, treated with lithium carbonate for at least 5 yr, were studied. Patients and controls underwent a neuropsychological assessment. Bipolar patients had significantly worse results than the healthy controls ...

  15. Olanzapine discontinuation emergent recurrence in bipolar disorder

    Directory of Open Access Journals (Sweden)

    Manu Arora

    2014-01-01

    Full Text Available Objective: The efficacy of atypical antipsychotics including olanzapine in acute treatment of manic episode has been established, whereas its role in maintenance treatment is not clear. Materials and Methods: Thirteen patients of bipolar disorder who were on regular treatment with mood stabilizer and subsequently relapsed into mania or depressive episode after discontinuation of olanzapine were studied for various socio-demographic and clinical factors using retrospective chart review. Results: There was no correlation found between the period of tapering olanzapine, time to recurrence of episode after discontinuation, and the dosage of olanzapine at the time of discontinuation. The predominant early signs of relapse after discontinuation of olanzapine included sleep disturbance (72.7%, lack of insight for change in behavior (72.7%, irritability (54.5%, and elevated mood (45.5%. Conclusion: Mood stabilizer alone as a maintenance therapy of bipolar disorder may be inadequate for long-term management. A low dose of olanzapine along with mood stabilizers might be useful for prevention of recurrence in bipolar disorder.

  16. Bipolar cautery forceps: An economical version

    Directory of Open Access Journals (Sweden)

    Appukuttan Aswin

    2007-01-01

    Full Text Available Context: Bipolar cautery forceps are an expensive instrument and especially in Government Medical colleges and Government Hospitals, getting a pair is a very tedious and prolonged task due to official reasons. Aims: To make a cheap and easily obtainable bipolar cautery forceps. Settings and Design: The reason for innovation was that the cautery forceps in the department were out of order and we were not getting replacements. Materials and Methods: Made from condemned and damaged forceps or from stainless steel nonsurgical forceps which are very low-cost, very cheap and easy to get hold of, especially in a Government institution with limited resources. Results: It has been used for the past one and a half years in our Department for plastic surgical procedures, including microvascular surgery. Initially, it was designed when the cautery forceps in the department were out of order and we were not getting replacements and later on, it became part of the routine set as it was found to be equally good. Conclusions: A very cheap and useful alternative to the commercially available bipolar cautery forceps has been made.

  17. Historical Underpinnings of Bipolar Disorder Diagnostic Criteria

    Directory of Open Access Journals (Sweden)

    Brittany L. Mason

    2016-07-01

    Full Text Available Mood is the changing expression of emotion and can be described as a spectrum. The outermost ends of this spectrum highlight two states, the lowest low, melancholia, and the highest high, mania. These mood extremes have been documented repeatedly in human history, being first systematically described by Hippocrates. Nineteenth century contemporaries Falret and Baillarger described two forms of an extreme mood disorder, with the validity and accuracy of both debated. Regardless, the concept of a cycling mood disease was accepted before the end of the 19th century. Kraepelin then described “manic depressive insanity” and presented his description of a full spectrum of mood dysfunction which could be exhibited through single episodes of mania or depression or a complement of many episodes of each. It was this concept which was incorporated into the first DSM and carried out until DSM-III, in which the description of episodic mood dysfunction was used to build a diagnosis of bipolar disorder. Criticism of this approach is explored through discussion of the bipolar spectrum concept and some recent examinations of the clinical validity of these DSM diagnoses are presented. The concept of bipolar disorder in children is also explored.

  18. Historical Underpinnings of Bipolar Disorder Diagnostic Criteria.

    Science.gov (United States)

    Mason, Brittany L; Brown, E Sherwood; Croarkin, Paul E

    2016-01-01

    Mood is the changing expression of emotion and can be described as a spectrum. The outermost ends of this spectrum highlight two states, the lowest low, melancholia, and the highest high, mania. These mood extremes have been documented repeatedly in human history, being first systematically described by Hippocrates. Nineteenth century contemporaries Falret and Baillarger described two forms of an extreme mood disorder, with the validity and accuracy of both debated. Regardless, the concept of a cycling mood disease was accepted before the end of the 19th century. Kraepelin then described "manic depressive insanity" and presented his description of a full spectrum of mood dysfunction which could be exhibited through single episodes of mania or depression or a complement of many episodes of each. It was this concept which was incorporated into the first DSM and carried out until DSM-III, in which the description of episodic mood dysfunction was used to build a diagnosis of bipolar disorder. Criticism of this approach is explored through discussion of the bipolar spectrum concept and some recent examinations of the clinical validity of these DSM diagnoses are presented. The concept of bipolar disorder in children is also explored. PMID:27429010

  19. Recurrence and Relapse in Bipolar Mood Disorder

    Directory of Open Access Journals (Sweden)

    S Gh Mousavi

    2004-06-01

    Full Text Available Background: Despite the effectiveness of pharmacotherapy in acute phase of bipolar mood disorder, patients often experience relapses or recurrent episodes. Hospitalization of patients need a great deal of financial and humanistic resources which can be saved through understanding more about the rate of relapse and factors affecting this rate. Methods: In a descriptive analytical study, 380 patients with bipolar disorder who were hospitalized in psychiatric emergency ward of Noor hospital, Isfahan, Iran, were followed. Each patient was considered for; the frequency of relapse and recurrence, kind of pharmachotherapy, presence of psychotherapeutic treatments, frequency of visits by psychiatrist and the rank of present episode. Results: The overall prevalence of recurrence was 42.2%. Recurrence was lower in patients using lithium carbonate or sodium valproate or combined therapy (about 40%, compared to those using carbamazepine (80%. Recurrence was higher in patients treated with only pharmacotherapy (44.5% compared to those treated with both pharmacotherapy and psychotherapy (22.2%. Patients who were visited monthy by psychiatrist had lower rate of recurrence compared to those who had irregular visits. Conclusion: The higher rate of recurrence observed in carbamazepine therapy may be due to its adverse reactions and consequently poor compliance to this drug. Lower rates of recurrence with psychotherapy and regular visits may be related to the preventive effects of these procedures and especially to the effective management of stress. Keywords: Bipolar Mood Disorder, Recurrence, Relapse.

  20. The physics and applications of amorphous semiconductors

    CERN Document Server

    Madan, Arun

    1988-01-01

    This comprehensive, detailed treatise on the physics and applications of the new emerging technology of amorphous semiconductors focuses on specific device research problems such as the optimization of device performance. The first part of the book presents hydrogenated amorphous silicon type alloys, whose applications include inexpensive solar cells, thin film transistors, image scanners, electrophotography, optical recording and gas sensors. The second part of the book discusses amorphous chalcogenides, whose applications include electrophotography, switching, and memory elements. This boo

  1. Amorphous powders for inhalation drug delivery.

    Science.gov (United States)

    Chen, Lan; Okuda, Tomoyuki; Lu, Xiang-Yun; Chan, Hak-Kim

    2016-05-01

    For inhalation drug delivery, amorphous powder formulations offer the benefits of increased bioavailability for poorly soluble drugs, improved biochemical stability for biologics, and expanded options of using various drugs and their combinations. However, amorphous formulations usually have poor physicochemical stability. This review focuses on inhalable amorphous powders, including the production methods, the active pharmaceutical ingredients and the excipients with a highlight on stabilization of the particles. PMID:26780404

  2. Amorphous Phase Properties Of Oriented Polyethylene Solids

    OpenAIRE

    Zahran, R. R; Kardos, J. L.

    1993-01-01

    Solid-state deformation of polyethylene results in a preferential orientation of both crystalline and amorphous regions. Usually, one major problem in the prediction of the mechanical and thermal expansion properties of anisotropic polyethylene lies in determining values for the amorphous phase properties and, particularly, at a given level of solid-state deformation. This paper outlines simple procedures for determining the two-dimensional amorphous orientation function and values for the...

  3. Forbidden energy band gap in diluted a-Ge1−xSix:N films

    International Nuclear Information System (INIS)

    By means of electron gun evaporation Ge1−xSix:N thin films, in the entire range 0 ≤ x ≤ 1, were prepared on Si (100) and glass substrates. The initial vacuum reached was 6.6 × 10−4 Pa, then a pressure of 2.7 × 10−2 Pa of high purity N2 was introduced into the chamber. The deposition time was 4 min. Crucible-substrate distance was 18 cm. X-ray diffraction patterns indicate that all the films were amorphous (a-Ge1−xSix:N). The nitrogen concentration was of the order of 1 at% for all the films. From optical absorption spectra data and by using the Tauc method the energy band gap (Eg) was calculated. The Raman spectra only reveal the presence of Si-Si, Ge-Ge, and Si-Ge bonds. Nevertheless, infrared spectra demonstrate the existence of Si-N and Ge-N bonds. The forbidden energy band gap (Eg) as a function of x in the entire range 0 ≤ x ≤ 1 shows two well defined regions: 0 ≤ x ≤ 0.67 and 0.67 ≤ x ≤ 1, due to two different behaviors of the band gap, where for x > 0.67 exists an abruptly change of Eg(x). In this case Eg(x) versus x is different to the variation of Eg in a-Ge1−xSix and a-Ge1−xSix:H. This fact can be related to the formation of Ge3N4 and GeSi2N4 when x ≤ 0.67, and to the formation of Si3N4 and GeSi2N4 for 0.67 ≤ x. - Highlights: ► Nitrogen doped amorphous Ge1-xSix thin films are grown by electron gun technique. ► Nitrogen atoms on Eg of the a-Ge1-xSix films in the 0 £ x £ 1 range are analyzed. ► Variation in 0 £ x £ 1 range shows a warped change of Eg in 1.0 – 3.6 eV range. ► The change in Eg(x) behavior when x ∼ 0.67 was associated with Ge2SiN4 presence.

  4. Hydrophobic transition in porous amorphous silica

    International Nuclear Information System (INIS)

    Realistic models of amorphous silica surfaces with different silanol densities are built using Monte Carlo annealing. Water-silica interfaces are characterized by their energy interaction maps, adsorption isotherms, self-diffusion coefficients, and Poiseuille flows. A hydrophilic to hydrophobic transition appears as the surface becomes purely siliceous. These results imply significant consequences for the description of surfaces. First, realistic models are required for amorphous silica interfaces. Second, experimental amorphous silica hydrophilicity is attributed to charged or uncharged defects, and not to amorphousness. In addition, auto irradiation in nuclear waste glass releases hydrogen atoms from silanol groups and can induce such a transition. (authors)

  5. Modeling of single-event upset in bipolar integrated circuits

    Science.gov (United States)

    Zoutendyk, J. A.

    1983-01-01

    The results of work done on the quantitative characterization of single-event upset (SEU) in bipolar random-access memories (RAMs) have been obtained through computer simulation of SEU in RAM cells that contain circuit models for bipolar transistors. The models include current generators that emulate the charge collected from ion tracks. The computer simulation results are compared with test data obtained from a RAM in a bipolar microprocessor chip. This methodology is applicable to other bipolar integrated circuit constructions in addition to RAM cells.

  6. Family Environment and Suicidal Ideation Among Bipolar Youth

    Science.gov (United States)

    Goldstein, Tina R.; Birmaher, Boris; Axelson, David; Goldstein, Benjamin I.; Gill, Mary Kay; Esposito-Smythers, Christianne; Ryan, Neal D.; Strober, Michael A.; Hunt, Jeffrey; Keller, Martin

    2010-01-01

    The objective of this study was to examine the association between family environment and suicidal ideation among youth with bipolar disorder. Subjects included 446 bipolar (BP) youth (age 7–17) enrolled in the Course and Outcome of Bipolar Youth study. Current suicidal ideation, family functioning and family stress were assessed at intake. BP youth with current suicidal ideation reported more conflict with their mother and less family adaptability. Ideators endorsed more stressful family events over the prior year and higher rates of specific familial stressors. Clinicians treating bipolar youth should consider family stress when conducting suicide risk assessment. Treatment goals may include enhancing family communication and addressing issues of loss. PMID:19813115

  7. Assessment of basic symptoms in schizophrenia, schizoaffective and bipolar disorders.

    Science.gov (United States)

    Ricca, V; Galassi, F; La Malfa, G; Mannucci, E; Barciulli, E; Cabras, P L

    1997-01-01

    In order to evaluate the basic symptoms differences of schizophrenics, schizoaffectives and bipolar patients, a consecutive series of 72 outpatients participated in the study. According to DSM III-R criteria, 28 had a diagnosis of schizophrenia, 29 of bipolar disorder and 15 of schizoaffective disorder. The assessment of basic symptoms was performed using the Frankfurter Beschwerde-Fragebogen (FBF). Data obtained suggest that perception and thought disturbances are the most characteristic experiences of schizophrenic patients in comparison with bipolar patients. The FBF questionnaire did not highlight a characteristic basic symptoms profile of schizoaffective disorder, when compared with bipolar affective disorder and schizophrenia. PMID:9042683

  8. Inelastic scattering from amorphous solids

    International Nuclear Information System (INIS)

    The potential of inelastic neutron scattering techniques for surveying various aspects of the dynamics of amorphous solids is briefly reviewed. The recent use of the Intense Pulsed Neutron Source to provide detailed information on the optical vibrations of glasses is discussed in more detail. The density of states represents an averaged quantity which gives information about the general characteristics of the structure and bonding. More extensive information can be obtained by studying the detailed wavevector dependence of the dynamic structure factor. 15 refs., 7 figs

  9. Plasma Deposition of Amorphous Silicon

    Science.gov (United States)

    Calcote, H. F.

    1982-01-01

    Strongly adhering films of silicon are deposited directly on such materials as Pyrex and Vycor (or equivalent materials) and aluminum by a non-equilibrium plasma jet. Amorphous silicon films are formed by decomposition of silicon tetrachloride or trichlorosilane in the plasma. Plasma-jet technique can also be used to deposit an adherent silicon film on aluminum from silane and to dope such films with phosphorus. Ability to deposit silicon films on such readily available, inexpensive substrates could eventually lead to lower cost photovoltaic cells.

  10. Amorphous silicon based solar cells

    OpenAIRE

    Al Tarabsheh, Anas

    2007-01-01

    This thesis focuses on the deposition of hydrogenated amorphous silicon (a-Si:H) films bymeans of plasma enhanced chemical vapour deposition (PECVD). This technique allows the growth of device quality a-Si:H at relatively low deposition temperatures, below 140 °C and, therefore, enables the use of low-cost substrates, e.g. plastic foils. The maximum efficiencies of a-Si:H solar cells in this work are η= 6.8 % at a deposition temperature Tdep = 180 °C and η = 4.9 % at a deposition ...

  11. Amorphous silicon based radiation detectors

    International Nuclear Information System (INIS)

    We describe the characteristics of thin(1 μm) and thick (>30μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs

  12. Antidepressants for bipolar disorder: A meta-analysis of randomized, double-blind, controlled trials

    OpenAIRE

    Zhang, Yingli; Yang, Huan; Yang, Shichang; Liang, Wei; DAI, Ping; Wang, Changhong; Zhang, Yalin

    2013-01-01

    OBJECTIVE: To examine the efficacy and safety of short-term and long-term use of antidepressants in the treatment of bipolar disorder. DATA SOURCES: A literature search of randomized, double-blind, controlled trials published until December 2012 was performed using the PubMed, ISI Web of Science, Medline and Cochrane Central Register of Controlled Trials databases. The keywords “bipolar disorder, bipolar I disorder, bipolar II disorder, bipolar mania, bipolar depression, cyclothymia, mixed ma...

  13. The Mood Disorder Questionnaire: A Simple, Patient-Rated Screening Instrument for Bipolar Disorder

    OpenAIRE

    Hirschfeld, Robert M. A.

    2002-01-01

    Bipolar disorder is frequently encountered in primary care settings, often in the form of poor response to treatment for depression. Although lifetime prevalence of bipolar I disorder is 1%, the prevalence of bipolar spectrum disorders (e.g., bipolar I, bipolar II, and cyclothymia) is much higher, especially among patients with depression. The consequences of misdiagnosis can be devastating. One way to improve recognition of bipolar spectrum disorders is to screen for them. The Mood Disorder ...

  14. Bipolar Fuzzy Soft sets and its applications in decision making problem

    OpenAIRE

    Aslam, Muhammad; Abdullah, Saleem; ullah, Kifayat

    2013-01-01

    In this article, we combine the concept of a bipolar fuzzy set and a soft set. We introduce the notion of bipolar fuzzy soft set and study fundamental properties. We study basic operations on bipolar fuzzy soft set. We define exdended union, intersection of two bipolar fuzzy soft set. We also give an application of bipolar fuzzy soft set into decision making problem. We give a general algorithm to solve decision making problems by using bipolar fuzzy soft set.

  15. Abordagens psicoterápicas no transtorno bipolar Psychoterapeutic approach in bipolar disorder

    OpenAIRE

    Paulo Knapp; Luciano Isolan

    2005-01-01

    Embora o tratamento farmacológico seja essencial para o tratamento do transtorno bipolar, apenas 40% de todos os pacientes que aderem às medicações permanecem assintomáticos durante o período de seguimento, o que tem levado ao desenvolvimento de intervenções psicoterápicas associadas. O objetivo deste artigo é examinar as evidências atuais da eficácia de intervenções psicoterápicas no tratamento do transtorno bipolar. Foi realizada uma pesquisa bibliográfica por meio do MedLine, PsychoINFO, L...

  16. Tratamento da depressão bipolar The treatment of bipolar depression

    OpenAIRE

    Beny Lafer; Marcia Britto de Macedo Soares

    2005-01-01

    O tratamento da depressão bipolar tem sido tema de debate. O uso de antidepressivos, principalmente tricíclicos, nestes pacientes está associado a piores desfechos clínicos. Estudos apontam para uma eficácia limitada de estabilizadores tradicionais como lítio, valproato e carbamazepina no tratamento da depressão bipolar. Em casos de depressão mais grave, há indicativos de que os antidepressivos podem ser úteis, sendo recomendado o uso concomitante de um estabilizador do humor. Novos agentes c...

  17. Polymeric amorphous carbon as p-type window within amorphous silicon solar cells

    NARCIS (Netherlands)

    Khan, R.U.A.; Silva, S.R.P.; Van Swaaij, R.A.C.M.M.

    2003-01-01

    Amorphous carbon (a-C) has been shown to be intrinsically p-type, and polymeric a-C (PAC) possesses a wide Tauc band gap of 2.6 eV. We have replaced the p-type amorphous silicon carbide layer of a standard amorphous silicon solar cell with an intrinsic ultrathin layer of PAC. The thickness of the p

  18. Feedforward lateral inhibition in retinal bipolar cells: input-output relation of the horizontal cell-depolarizing bipolar cell synapse.

    OpenAIRE

    Yang, X. L.; S. M. Wu

    1991-01-01

    Lateral inhibition is the ubiquitous strategy used by visual neurons for spatial resolution throughout the animal kingdom. It has been a puzzle whether lateral inputs in retinal bipolar cells are mediated by the horizontal cell (HC)-cone feedback synapse, by the HC-bipolar cell feedforward synapse, or by both. By blocking the central inputs of the depolarizing bipolar cells (DBCs) with L-2-amino-4-phosphonobutyrate, we were able to eliminate the contribution of the feedback synapse and to dem...

  19. Comparing clinical responses and the biomarkers of BDNF and cytokines between subthreshold bipolar disorder and bipolar II disorder

    OpenAIRE

    Tzu-Yun Wang; Sheng-Yu Lee; Shiou-Lan Chen; Yun-Hsuan Chang; Liang-Jen Wang; Po See Chen; Shih-Heng Chen; Chun-Hsien Chu; San-Yuan Huang; Nian-Sheng Tzeng; Chia-Ling Li; Yi-Lun Chung; Tsai-Hsin Hsieh; I Hui Lee; Kao Chin Chen

    2016-01-01

    Patients with subthreshold hypomania (SBP; subthreshold bipolar disorder) were indistinguishable from those with bipolar disorder (BP)-II on clinical bipolar validators, but their analyses lacked biological and pharmacological treatment data. Because inflammation and neuroprogression underlies BP, we hypothesized that cytokines and brain-derived neurotrophic factor (BDNF) are biomarkers for BP. We enrolled 41 drug-naïve patients with SBP and 48 with BP-II undergoing 12 weeks of pharmacologica...

  20. In situ dynamic HR-TEM and EELS study on phase transitions of Ge2Sb2Te5 chalcogenides

    International Nuclear Information System (INIS)

    The phase transition phenomena of Ge2Sb2Te5 chalcogenides were investigated by in situ dynamic high-resolution transmission electron microscopy (HR-TEM) and electron energy loss spectroscopy (EELS). A 300 kV field emission TEM and a 1250 kV high voltage TEM were employed for the in situ heating experiments from 20 to 500 deg. C for undoped and 3 wt% nitrogen-doped Ge2Sb2Te5 thin films deposited by DC sputtering. Crystallization of amorphous Ge2Sb2Te5 to its cubic structure phase started at 130 deg. C and then rapid crystal growth developed from cubic to hexagonal phase in the range of 130-350 deg. C; finally, the hexagonal crystals started to melt at 500 deg. C. For nitrogen-doped Ge2Sb2Te5, its crystallization from amorphous film occurred at higher temperature of ca. 200 deg. C, and the cubic and hexagonal phases were usually formed simultaneously without significant growth of crystals at further heating to 400 deg. C. EELS measurements showed that the electronic structures of Ge, Sb and Te stayed almost the same regardless of the amorphous, FCC and hexagonal phases. The nitrogen doped in Ge2Sb2Te5 was confirmed to exist as a nitride. Also, the doped nitrogen distributed homogeneously in both amorphous and crystalline phases. Localization of doped nitrogen was not found in the grain boundary of crystallized phases. The dynamic process of phase transition was enhanced by high-energy electron irradiation. Peeling of atomic layers in nitrogen-doped Ge2Sb2Te5 film was detected during heating assisted with electron beam irradiation