WorldWideScience

Sample records for amorphous carbon films

  1. Structural morphology of amorphous conducting carbon film

    Indian Academy of Sciences (India)

    Unknown

    in nanotubes and sp3 rich amorphous carbons for their application in field emission, device application, etc in- vestigations on sp2 rich amorphous carbon forms are very few. Though DLC films have potential application in field emission (FE) due to their low threshold voltage, the carbon centres, which are believed to play ...

  2. Characterization of amorphous and nanocrystalline carbon films

    International Nuclear Information System (INIS)

    Chu, Paul K.; Li Liuhe

    2006-01-01

    Amorphous and nanocrystalline carbon films possess special chemical and physical properties such as high chemical inertness, diamond-like properties, and favorable tribological proprieties. The materials usually consist of graphite and diamond microstructures and thus possess properties that lie between the two. Amorphous and nanocrystalline carbon films can exist in different kinds of matrices and are usually doped with a large amount of hydrogen. Thus, carbon films can be classified as polymer-like, diamond-like, or graphite-like based on the main binding framework. In order to characterize the structure, either direct bonding characterization methods or the indirect bonding characterization methods are employed. Examples of techniques utilized to identify the chemical bonds and microstructure of amorphous and nanocrystalline carbon films include optical characterization methods such as Raman spectroscopy, Ultra-violet (UV) Raman spectroscopy, and infrared spectroscopy, electron spectroscopic and microscopic methods such as scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy, transmission electron microscopy, and electron energy loss spectroscopy, surface morphology characterization techniques such as scanning probe microscopy (SPM) as well as other characterization methods such as X-ray reflectivity and nuclear magnetic resonance. In this review, the structures of various types of amorphous carbon films and common characterization techniques are described

  3. Nanostructural characterization of amorphous diamondlike carbon films

    Energy Technology Data Exchange (ETDEWEB)

    SIEGAL,MICHAEL P.; TALLANT,DAVID R.; MARTINEZ-MIRANDA,L.J.; BARBOUR,J. CHARLES; SIMPSON,REGINA L.; OVERMYER,DONALD L.

    2000-01-27

    Nanostructural characterization of amorphous diamondlike carbon (a-C) films grown on silicon using pulsed-laser deposition (PLD) is correlated to both growth energetic and film thickness. Raman spectroscopy and x-ray reflectivity probe both the topological nature of 3- and 4-fold coordinated carbon atom bonding and the topographical clustering of their distributions within a given film. In general, increasing the energetic of PLD growth results in films becoming more ``diamondlike'', i.e. increasing mass density and decreasing optical absorbance. However, these same properties decrease appreciably with thickness. The topology of carbon atom bonding is different for material near the substrate interface compared to material within the bulk portion of an a-C film. A simple model balancing the energy of residual stress and the free energies of resulting carbon topologies is proposed to provide an explanation of the evolution of topographical bonding clusters in a growing a-C film.

  4. Characterization of amorphous hydrogenated carbon films ...

    Indian Academy of Sciences (India)

    Amorphous hydrogenated carbon films (-C:H) on -type (100) silicon wafers were prepared with a middle frequency pulsed unbalanced magnetron sputtering technique (MFPUMST) at different ratios of methane–argon gases. The band characteristics, mechanical properties as well as refractive index were measured by ...

  5. Characterization of amorphous hydrogenated carbon films ...

    Indian Academy of Sciences (India)

    †Key Laboratory of Radiation and Technology of Education Ministry of China, Institute of Nuclear Science and. Technology, Sichuan University, Chengdu 610064, P. R. China. MS received 14 March 2011; revised 29 October 2011. Abstract. Amorphous hydrogenated carbon films (a-C:H) on p-type (100) silicon wafers were ...

  6. Structural morphology of amorphous conducting carbon film

    Indian Academy of Sciences (India)

    Amorphous conducting carbon films deposited over quartz substrates were analysed using X-ray diffraction and AFM technique. X-ray diffraction data reveal disorder and roughness in the plane of graphene sheet as compared to that of graphite. This roughness increases with decrease in preparation temperature. The AFM ...

  7. Structural morphology of amorphous conducting carbon film

    Indian Academy of Sciences (India)

    Unknown

    been found to be having a lot of technological applica- tions. The properties of these amorphous carbons sensi- tively depend on the relative concentration of sp3 and sp2 hybridized carbons. The resulting amorphous materials are variously referred to as tetrahedral amorphous carbon. (ta-C), amorphous carbon (a-C), ...

  8. Nanostructural characterization of amorphous diamondlike carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Siegal, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Tallant, D. R. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Martinez-Miranda, L. J. [University of Maryland, Department of Materials and Nuclear Engineering, College Park, Maryland 20742 (United States); Barbour, J. C. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Simpson, R. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Overmyer, D. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

    2000-04-15

    Nanostructural characterization of amorphous diamondlike carbon (a-C) films grown on silicon using pulsed-laser deposition (PLD) is correlated to both growth energetics and film thickness. Raman spectroscopy and x-ray reflectivity probe both the topological nature of three- and four-fold coordinated carbon atom bonding and the topographical clustering of their distributions within a given film. In general, increasing the energetics of PLD growth results in films becoming more ''diamondlike,'' i.e., increasing mass density and decreasing optical absorbance. However, these same properties decrease appreciably with thickness. The topology of carbon atom bonding is different for material near the substrate interface compared to material within the bulk portion of an a-C film. A simple model balancing the energy of residual stress and the free energies of resulting carbon topologies is proposed to provide an explanation of the evolution of topographical bonding clusters in a growing a-C film. (c) 2000 The American Physical Society.

  9. Optical properties of amorphous hydrogenated carbon films

    Science.gov (United States)

    Chen, Jing Qiu

    Carbon can be formed either as fully crystalline structures, such as diamond, graphite, and fullerene (C60). or as mostly amorphous structures, like amorphous hydrogenated carbon (a-C:H). A study was made of a-C:H films which had been deposited by plasma enhanced chemical vapor deposition (PECVD) using CH4, H2 and Ar (or N2 for doping) gas mixtures. Each film exhibits unique physical, optical and electronic properties dependent upon the specific deposition parameters. The study is intended to extend our understanding of the properties of a-C:H films. Samples prepared by James Johnson, similar to those used in his previous studies (using mainly 4 separate sets of deposition parameters), were evaluated along with other samples which were unique to this study. Film preparation parameters were varied to allow an examination of the effects induced through the variation of deposition power level, partial substitution of nitrogen for methane in the deposition process gasses and post-deposition thermal annealing. The film optical properties were evaluated using combination of non-destructive test methods, including Raman scattering, photoluminescence (PL), optical absorption and photoluminescence excitation (PLE) spectroscopies. Different PL responses at low temperature (6 K) were recorded for doped and/or annealed samples deriving from the main set of samples. Two new features at 564 and 637 nm of nitrogen doped films replaced the 597 and 703 nm of undoped films. For the first time, three Raman phonon peaks were observed in a nitrogen doped and annealed film. Additional FTIR data indicated that the third Raman phonon peak was associated with CH2 and CH3 bonding structures. The Raman scattering data contributed to an improved understanding of the two-phase (sp2, sp3) model developed by Robertson. Optical absorption measurements could only be obtained for the films deposited on fused quartz. All other measurements were made on films deposited on silicon, which is opaque in

  10. Coaxial carbon plasma gun deposition of amorphous carbon films

    Science.gov (United States)

    Sater, D. M.; Gulino, D. A.; Rutledge, S. K.

    1984-01-01

    A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

  11. Bonding topologies in diamondlike amorphous-carbon films

    Energy Technology Data Exchange (ETDEWEB)

    SIEGAL,MICHAEL P.; PROVENCIO,PAULA P.; TALLANT,DAVID R.; SIMPSON,REGINA L.; KLEINSORGE,B.; MILNE,W.I.

    2000-01-27

    The carbon ion energy used during filtered cathodic vacuum arc deposition determines the bonding topologies of amorphous-carbon (a-C) films. Regions of relatively low density occur near the substrate/film and film/surface interfaces and their thicknesses increase with increasing deposition energy. The ion subplantation growth results in mass density gradients in the bulk portion of a-C in the growth direction; density decreases with distance from the substrate for films grown using ion energies < 60 eV and increases for films grown using ion energies > 160 eV. Films grown between these energies are the most diamondlike with relatively uniform bulk density and the highest optical transparencies. Bonding topologies evolve with increasing growth energy consistent with the propagation of subplanted carbon ions inducing a partial transformation of 4-fold to 3-fold coordinated carbon atoms.

  12. Bonding topologies in diamondlike amorphous-carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Siegal, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Provencio, P. N. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Tallant, D. R. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Simpson, R. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Kleinsorge, B. [Department of Engineering, Cambridge University, Cambridge CB2 1PZ, (United Kingdom); Milne, W. I. [Department of Engineering, Cambridge University, Cambridge CB2 1PZ, (United Kingdom)

    2000-04-10

    The carbon ion energy used during filtered cathodic vacuum arc deposition determines the bonding topologies of amorphous-carbon (a-C) films. Regions of relatively low density occur near the substrate/film and film/surface interfaces; their thicknesses increase with deposition energy. The ion subplantation growth results in mass density gradients in the bulk portion of a-C in the growth direction; density decreases with distance from the substrate for films grown using ion energies <60 eV and increases for films grown using ion energies >160 eV. Films grown between these energies are the most diamondlike with relatively uniform bulk density and the highest optical transparencies. Bonding topologies evolve with increasing growth energy consistent with the propagation of subplanted carbon ions inducing a partial transformation of {sigma}- to {pi}-bonded carbon atoms. (c) 2000 American Institute of Physics.

  13. Bonding topologies in diamondlike amorphous-carbon films

    International Nuclear Information System (INIS)

    Siegal, M. P.; Provencio, P. N.; Tallant, D. R.; Simpson, R. L.; Kleinsorge, B.; Milne, W. I.

    2000-01-01

    The carbon ion energy used during filtered cathodic vacuum arc deposition determines the bonding topologies of amorphous-carbon (a-C) films. Regions of relatively low density occur near the substrate/film and film/surface interfaces; their thicknesses increase with deposition energy. The ion subplantation growth results in mass density gradients in the bulk portion of a-C in the growth direction; density decreases with distance from the substrate for films grown using ion energies 160 eV. Films grown between these energies are the most diamondlike with relatively uniform bulk density and the highest optical transparencies. Bonding topologies evolve with increasing growth energy consistent with the propagation of subplanted carbon ions inducing a partial transformation of σ- to π-bonded carbon atoms. (c) 2000 American Institute of Physics

  14. Systematic study of amorphous hydrogenated and fluorinated carbon films

    Science.gov (United States)

    Lamperti, A.; Ossi, P. M.

    2003-01-01

    Amorphous fluorinated carbon films were grown from CF 4 and C 2H 2 mixtures, using a Plasma Assisted Chemical Vapour Deposition (PACVD) apparatus. Two sets of films were deposited, changing in a systematic way the CF 4 flux and the bias voltage ( Vb). Film composition and structure were analysed by secondary ion mass spectroscopy (SIMS), infrared (IR) and Raman spectroscopies. Film hardness was obtained by micro-indentation measurements. On increasing fluorine content in films, hardness decreases and a fluorescence background in Raman spectra appears at high fluorine content, showing a diamond- to polymer-like structural transition. Infrared spectra indicate the presence of CF x, CCHF and CCF 2 groups in the films. Our data are compared with previous results in the literature and the mechanisms involved in film formation are discussed, especially regarding fluorine substitution for hydrogen.

  15. Heat treatment of cathodic arc deposited amorphous hard carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Anders, S.; Ager, J.W. III; Brown, I.G. [and others

    1997-02-01

    Amorphous hard carbon films of varying sp{sup 2}/sp{sup 3} fractions have been deposited on Si using filtered cathodic are deposition with pulsed biasing. The films were heat treated in air up to 550 C. Raman investigation and nanoindentation were performed to study the modification of the films caused by the heat treatment. It was found that films containing a high sp{sup 3} fraction sustain their hardness for temperatures at least up to 400 C, their structure for temperatures up to 500 C, and show a low thickness loss during heat treatment. Films containing at low sp{sup 3} fraction graphitize during the heat treatment, show changes in structure and hardness, and a considerable thickness loss.

  16. Infrared analysis of thin films amorphous, hydrogenated carbon on silicon

    CERN Document Server

    Jacob, W; Schwarz-Selinger, T

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, ...

  17. Elemental distribution in fluorinated amorphous carbon thin films.

    Science.gov (United States)

    Lamperti, A; Bottani, C E; Ossi, P M

    2005-01-01

    Focused ion beam-secondary ion mass spectrometry (FIB-SIMS) with 20 nm spatial resolution has been used to analyze amorphous fluorinated carbon thin films, deposited by plasma assisted chemical vapor deposition (PACVD), at micro- to nano-scale. Mass spectra and ion imaging of film surface were acquired and the presence and distribution of contaminants were investigated. Surface images show the secondary ion distribution for F(-), CH(-), CF(-). A change in size and topology of fluorine-rich areas is correlated with film hardness and with microstructure transition from diamond-like to polymer-like, as indicated by infrared and Raman spectroscopies. Based on the surface distributions of CF(-) and CH(-) and on the vibrational spectroscopy results, a mechanism of fluorine substitution for hydrogen and an attempt to explain the film structure and microstructure is proposed.

  18. Structures and properties of fluorinated amorphous carbon films

    Science.gov (United States)

    Huang, K. P.; Lin, P.; Shih, H. C.

    2004-07-01

    Fluorinated amorphous carbon (a-C:F) films were deposited by radio frequency bias assisted microwave plasma electron cyclotron resonance chemical vapor deposition with tetrafluoromethane (CF4) and acetylene (C2H2) as precursors. The deposition process was performed at two flow ratios R=0.90 and R=0.97, where R=CF4/(CF4+C2H2). The samples were annealed at 300 °C for 30 min. in a N2 atmosphere. Both Fourier transform infrared and electron spectroscopy for chemical analyzer were used to characterize the a-C:F film chemical bond and fluorine concentration, respectively. A high resolution electron energy loss spectrometer was applied to detect the electronic structure. The higher CF4 flow ratio (R=0.97) produced more sp3 linear structure, and it made the a-C:F film smoother and softer. A lifetime of around 0.34 μs and an energy gap of ˜2.75 eV were observed in both the as-deposited and after annealing conditions. The short carriers lifetime in the a-C:F film made the photoluminescence peak blueshift. The annealing changed both the structure and composition of the a-C:F film. The type of fluorocarbon bond and electronic structure characterized the mechanical and physical properties of a-C:F film.

  19. Piezoresistive gauge factor of hydrogenated amorphous carbon films

    Science.gov (United States)

    Tibrewala, A.; Peiner, E.; Bandorf, R.; Biehl, S.; Lüthje, H.

    2006-06-01

    In this paper we report on the transport properties of hydrogenated amorphous carbon (a-C:H) which is an attractive material for strain gauges and can also be used in flow meters, accelerometers and vibrational sensors. The a-C:H films were deposited at -350 V bias voltage on silicon (Si) substrates using plasma assisted chemical vapor deposition (PACVD). Current-voltage characteristics of a-C:H/n-Si heterojunctions show ohmic behavior within operating voltages of ±1 V. In the higher voltage range the Frenkel-Poole mechanism is dominant. Conduction is thermally activated at temperatures ranging from 23 °C to 150 °C. The activation energy amounts to 0.48 eV. A-C:H resistors are successfully integrated as strain gauges in Si bulk micromachined force sensors. Piezoresistive gauge factors are measured for the a-C:H strain gauge resistors in the temperature range 23-60 °C. The measured piezoresistive gauge factors are in between 40 and 90 for a-C:H with resistivities in the range 100-700 MΩ cm.

  20. Low-energy electron irradiation induced top-surface nanocrystallization of amorphous carbon film

    Science.gov (United States)

    Chen, Cheng; Fan, Xue; Diao, Dongfeng

    2016-10-01

    We report a low-energy electron irradiation method to nanocrystallize the top-surface of amorphous carbon film in electron cyclotron resonance plasma system. The nanostructure evolution of the carbon film as a function of electron irradiation density and time was examined by transmission electron microscope (TEM) and Raman spectroscopy. The results showed that the electron irradiation gave rise to the formation of sp2 nanocrystallites in the film top-surface within 4 nm thickness. The formation of sp2 nanocrystallite was ascribed to the inelastic electron scattering in the top-surface of carbon film. The frictional property of low-energy electron irradiated film was measured by a pin-on-disk tribometer. The sp2 nanocrystallized top-surface induced a lower friction coefficient than that of the original pure amorphous film. This method enables a convenient nanocrystallization of amorphous surface.

  1. Chemical bonding modifications of tetrahedral amorphous carbon and nitrogenated tetrahedral amorphous carbon films induced by rapid thermal annealing

    International Nuclear Information System (INIS)

    McCann, R.; Roy, S.S.; Papakonstantinou, P.; Bain, M.F.; Gamble, H.S.; McLaughlin, J.A.

    2005-01-01

    Tetrahedral amorphous carbon (ta-C) and nitrogenated tetrahedral amorphous carbon films (ta-CN x ), deposited by double bend off plane Filtered Vacuum Cathodic Arc were annealed up to 1000 deg. C in flowing argon for 2 min. Modifications on the chemical bonding structure of the rapidly annealed films, as a function of temperature, were investigated by NEXAFS, X-ray photoelectron and Raman spectroscopies. The interpretation of these spectra is discussed. The results demonstrate that the structure of undoped ta-C films prepared at floating potential with an arc current of 80 A remains stable up to 900 deg. C, whereas that of ta-CN x containing 12 at.% nitrogen is stable up to 700 deg. C. At higher temperatures, all the spectra indicated the predominant formation of graphitic carbon. Through NEXAFS studies, we clearly observed three π* resonance peaks at the ' N K edge structure. The origin of these three peaks is not well established in the literature. However our temperature-dependant study ascertained that the first peak originates from C=N bonds and the third peak originates from the incorporation of nitrogen into the graphite like domains

  2. Amorphous silicon-carbon based nano-scale thin film anode materials for lithium ion batteries

    International Nuclear Information System (INIS)

    Datta, Moni Kanchan; Maranchi, Jeffrey; Chung, Sung Jae; Epur, Rigved; Kadakia, Karan; Jampani, Prashanth; Kumta, Prashant N.

    2011-01-01

    Research highlights: → Thin film amorphous C/Si. Good cycling response validates carbon matrix for Silicon anodes. → Thin film amorphous C/Si/C. Good cycling response validates carbon as an interface and matrix. - Abstract: The buffering effect of carbon on the structural stability of amorphous silicon films, used as an anode for lithium ion rechargeable batteries, has been studied during long term discharge/charge cycles. To this extent, the electrochemical performance of a prototype material consisting of amorphous Si thin film (∼250 nm) deposited by radio frequency magnetron sputtering on amorphous carbon (∼50 nm) thin films, denoted as a-C/Si, has been investigated. In comparison to pure amorphous Si thin film (a-Si) which shows a rapid fade in capacity after 30 cycles, the a-C/Si exhibits excellent capacity retention displaying ∼0.03% fade in capacity up to 50 cycles and ∼0.2% after 50 cycles when cycled at a rate of 100 μA/cm 2 (∼C/2) suggesting that the presence of thin amorphous C layer deposited between the Cu substrate and a-Si acts as a buffer layer facilitating the release of the volume induced stresses exhibited by pure a-Si during the charge/discharge cycles. This structural integrity combined with microstructural stability of the a-C/Si thin film during the alloying/dealloying process with lithium has been confirmed by scanning electron microscopy (SEM) analysis. The buffering capacity of the thin amorphous carbon layer lends credence to its use as the likely compliant matrix to curtail the volume expansion related cracking of silicon validating its choice as the matrix for bulk and thin film battery systems.

  3. Opto-electrical properties of amorphous carbon thin film deposited from natural precursor camphor

    Energy Technology Data Exchange (ETDEWEB)

    Pradhan, Debabrata [Department of Chemistry, Indian Institute of Technology Bombay, Mumbai 400 076 (India)]. E-mail: dpradhan@sciborg.uwaterloo.ca; Sharon, Maheshwar [Department of Chemistry, Indian Institute of Technology Bombay, Mumbai 400 076 (India)

    2007-06-30

    A simple thermal chemical vapor deposition technique is employed for the pyrolysis of a natural precursor 'camphor' and deposition of carbon films on alumina substrate at higher temperatures (600-900 deg. C). X-ray diffraction measurement reveals the amorphous structure of these films. The carbon films properties are found to significantly vary with the deposition temperatures. At higher deposition temperature, films have shown predominately sp{sup 2}-bonded carbon and therefore, higher conductivity and lower optical band gap (Tauc gap). These amorphous carbon (a-C) films are also characterized with Raman and X-ray photoelectron spectroscopy. In addition, electrical and optical properties are measured. The thermoelectric measurement shows these as-grown a-C films are p-type in nature.

  4. Preparation and properties of amorphous carbon and hydrocarbon films

    Energy Technology Data Exchange (ETDEWEB)

    Richter, F. (Fachbereich Physik, TU Chemnitz (Germany)); Bewilogua, K. (Fraunhofer-Inst. fuer Schicht- und Oberflaechentechnik, Hamburg (Germany)); Kupfer, H.; Muehling, I.; Rau, B.; Rother, B. (Fachbereich Physik, TU Chemnitz (Germany)); Schumacher, D. (Lehrstuhl fuer Oberflaechenwissenschaft, Univ. Duesseldorf (Germany))

    1992-05-15

    This paper deals with amorphous carbonaceous films deposited by different ion/or plasma assisted methods (cathodic arc evaporation, ion plating, and magnetron sputtering), which show remarkable differences in density, composition and energetic state of the particle fluxes arriving at the substrate surface. The structure of the layers was characterized by electron energy loss spectroscopy, high energy electron diffraction, Raman spectroscopy, and electron microscopy. Moreover, the hardness and mass density of the layers were measured. The three deposition methods are compared with regard to their growth conditions yielding a specific layer structure. (orig.).

  5. Low-energy electron irradiation induced top-surface nanocrystallization of amorphous carbon film

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Cheng [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China); Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060 (China); Fan, Xue, E-mail: fanx@szu.edu.cn [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China); Diao, Dongfeng, E-mail: dfdiao@szu.edu.cn [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China)

    2016-10-30

    Graphical abstract: Low-energy electron irradiation was proposed to nanocrystallize the top-surface of the as-deposited amorphous carbon film, and sp{sup 2} nanocrystallites formed in the film top-surface within 4 nm thickness. Display Omitted - Abstract: We report a low-energy electron irradiation method to nanocrystallize the top-surface of amorphous carbon film in electron cyclotron resonance plasma system. The nanostructure evolution of the carbon film as a function of electron irradiation density and time was examined by transmission electron microscope (TEM) and Raman spectroscopy. The results showed that the electron irradiation gave rise to the formation of sp{sup 2} nanocrystallites in the film top-surface within 4 nm thickness. The formation of sp{sup 2} nanocrystallite was ascribed to the inelastic electron scattering in the top-surface of carbon film. The frictional property of low-energy electron irradiated film was measured by a pin-on-disk tribometer. The sp{sup 2} nanocrystallized top-surface induced a lower friction coefficient than that of the original pure amorphous film. This method enables a convenient nanocrystallization of amorphous surface.

  6. Facile fabrication of boron nitride nanosheets-amorphous carbon hybrid film for optoelectronic applications

    KAUST Repository

    Wan, Shanhong

    2015-01-01

    A novel boron nitride nanosheets (BNNSs)-amorphous carbon (a-C) hybrid film has been deposited successfully on silicon substrates by simultaneous electrochemical deposition, and showed a good integrity of this B-C-N composite film by the interfacial bonding. This synthesis can potentially provide the facile control of the B-C-N composite film for the potential optoelectronic devices. This journal is

  7. Structure of ion-plated amorphous hydrogenated carbon films investigated by electron energy loss spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Muehling, I.; Bewilogua, K.; Breuer, K. (Sektion Physik/Elektronische Bauelemente, Technische Univ., Karl-Marx-Stadt (German Democratic Republic))

    1990-05-15

    Thin ion-plated amorphous hydrogenated carbon films were investigated by electron energy loss spectroscopy. From an analysis of the dielectric function, information on the film structure could be obtained. The results will be compared with those of electron diffraction studies. Differences between insulating and conducting substrates could be verified in the film structure and are related to surface charging effects. From an analysis of the oscillator strength sum rule the content of C sp{sup 2} atoms was estimated. (orig.).

  8. The effect of Argon ion irradiation on the thickness and structure of ultrathin amorphous carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Xie, J.; Komvopoulos, K., E-mail: kyriakos@me.berkeley.edu [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)

    2016-03-07

    Carbon films synthesized by plasma-enhanced chemical vapor deposition (PECVD) and filtered cathodic vacuum arc (FCVA) exhibit a layered structure consisting of a bottom (interface) and a top (surface) layer rich in sp{sup 2} atomic carbon bonding and a middle (bulk) layer of much higher sp{sup 3} content. Because of significant differences in the composition, structure, and thickness of these layers, decreasing the film thickness may negatively affect its properties. In this study, transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) were used to examine the effect of Ar{sup +} ion irradiation on the structure and thickness of ultrathin films of hydrogenated amorphous carbon (a-C:H) and hydrogen-free amorphous carbon (a-C) deposited by PECVD and FCVA, respectively. The TEM and EELS results show that 2-min ion irradiation decreases the film thickness without markedly changing the film structure and composition, whereas 4-min ion irradiation results in significant film thinning and a moderate decrease of the sp{sup 3} content of the bulk layer. This study demonstrates that Ar{sup +} ion irradiation is an effective post-deposition process for reducing the thickness and tuning the structure of ultrathin carbon films. This capability has direct implications in the synthesis of ultrathin protective carbon overcoats for extremely high-density magnetic recording applications.

  9. Evaluation of optical properties of the amorphous carbon film on fused silica

    International Nuclear Information System (INIS)

    Baydogan, Nilguen Dogan

    2004-01-01

    Deposition was done using a pulsed filtered cathodic arc with a graphite cathode. The carbon plasma is fully ionised and condenses on the substrate, forming diamond-like material but with amorphous structure. Optical properties of amorphous carbon films on fused-silica glass were investigated and the curves of optical density have a characteristic band at approximately 950 nm. Changes of the colourimetric quantities were evaluated and compared to uncoated fused silica glass. These changes were investigated as a function of the applied substrate bias voltage using the CIE and CIELAB colour systems. It is suggested that the mechanism of absorption is related to an allowed direct transition at the amorphous carbon films on fused silica glass. The optical energy gap of the amorphous carbon film depends on the bias voltage applied to the substrate holder. The optical colour parameters and optical band gap indicated that there is a relation between the dominant wavelength of the reflectance in the visible range and the wavelength of the optical band gap

  10. Deposit of thin films of nitrided amorphous carbon using the laser ablation technique

    International Nuclear Information System (INIS)

    Rebollo, P.B.; Escobar A, L.; Camps C, E.; Haro P, E.; Camacho L, M.A.; Muhl S, S.

    2000-01-01

    It is reported the synthesis and characterization of thin films of amorphous carbon (a-C) nitrided, deposited by laser ablation in a nitrogen atmosphere at pressures which are from 4.5 x 10 -4 Torr until 7.5 x 10 -2 Torr. The structural properties of the films are studied by Raman spectroscopy obtaining similar spectra at the reported for carbon films type diamond. The study of behavior of the energy gap and the ratio nitrogen/carbon (N/C) in the films, shows that the energy gap is reduced when the nitrogen incorporation is increased. It is showed that the refraction index of the thin films diminish as nitrogen pressure is increased, indicating the formation of graphitic material. (Author)

  11. A near-wearless and extremely long lifetime amorphous carbon film under high vacuum.

    Science.gov (United States)

    Wang, Liping; Zhang, Renhui; Jansson, Ulf; Nedfors, Nils

    2015-06-10

    Prolonging wear life of amorphous carbon films under vacuum was an enormous challenge. In this work, we firstly reported that amorphous carbon film as a lubricant layer containing hydrogen, oxygen, fluorine and silicon (a-C:H:O:F:Si) exhibited low friction (~0.1), ultra-low wear rate (9.0 × 10(-13) mm(3) N(-1) mm(-1)) and ultra-long wear life (>2 × 10(6) cycles) under high vacuum. We systematically examined microstructure and composition of transfer film for understanding of the underlying frictional mechanism, which suggested that the extraordinarily excellent tribological properties were attributed to the thermodynamically and structurally stable FeF2 nanocrystallites corroborated using first-principles calculations, which were induced by the tribochemical reaction.

  12. Screen-printed carbon electrode modified on its surface with amorphous carbon nitride thin film: Electrochemical and morphological study

    Energy Technology Data Exchange (ETDEWEB)

    Ghamouss, F. [Universite de Nantes, UMR 6006-CNRS, FR-2465-CNRS, Laboratoire d' Analyse isotopique et Electrochimique de Metabolismes (LAIEM) (France); Tessier, P.-Y. [Universite de Nantes, UMR CNRS 6502, Institut des Materiaux Jean Rouxel - IMN Faculte des Sciences and des Techniques de Nantes, 2 rue de la Houssiniere, 44322 Nantes Cedex 3 (France); Djouadi, A. [Universite de Nantes, UMR CNRS 6502, Institut des Materiaux Jean Rouxel - IMN Faculte des Sciences and des Techniques de Nantes, 2 rue de la Houssiniere, 44322 Nantes Cedex 3 (France); Besland, M.-P. [Universite de Nantes, UMR CNRS 6502, Institut des Materiaux Jean Rouxel - IMN Faculte des Sciences and des Techniques de Nantes, 2 rue de la Houssiniere, 44322 Nantes Cedex 3 (France); Boujtita, M. [Universite de Nantes, UMR 6006-CNRS, FR-2465-CNRS, Laboratoire d' Analyse isotopique et Electrochimique de Metabolismes (LAIEM) (France)]. E-mail: mohammed.boujtita@univ-nantes.fr

    2007-04-20

    The surface of a screen-printed carbon electrode (SPCE) was modified by using amorphous carbon nitride (a-CN {sub x}) thin film deposited by reactive magnetron sputtering. Scanning electron microscopy and photoelectron spectroscopy measurements were used to characterise respectively the morphology and the chemical structure of the a-CN {sub x} modified electrodes. The incorporation of nitrogen in the amorphous carbon network was demonstrated by X ray photoelectron spectroscopy. The a-CN {sub x} layers were deposited on both carbon screen-printed electrode (SPCE) and silicon (Si) substrates. A comparative study showed that the nature of substrate, i.e. SPCE and Si, has a significant effect on both the surface morphology of deposited a-CN {sub x} film and their electrochemical properties. The improvement of the electrochemical reactivity of SPCE after a-CN {sub x} film deposition was highlighted both by comparing the shapes of voltammograms and calculating the apparent heterogeneous electron transfer rate constant.

  13. Amorphous Carbon Gold Nanocomposite Thin Films: Structural and Spectro-ellipsometric Analysis

    Energy Technology Data Exchange (ETDEWEB)

    Montiel-Gonzalez, Z., E-mail: zeuzmontiel@hotmail.com [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, Ciudad Universitaria, Coyoacan 04510, Mexico D.F (Mexico); Rodil, S.E.; Muhl, S. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito exterior s/n, Ciudad Universitaria, Coyoacan 04510, Mexico D.F (Mexico); Mendoza-Galvan, A. [Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, Unidad Queretaro, 76010 Queretaro, Queretaro (Mexico); Rodriguez-Fernandez, L. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Circuito de la Investigacion Cientifica, Ciudad Universitaria, 04510, Mexico D.F (Mexico)

    2011-07-01

    Spectroscopic Ellipsometry was used to determine the optical and structural properties of amorphous carbon:gold nanocomposite thin films deposited by dc magnetron co-sputtering at different deposition power. The incorporation of gold as small particles distributed in the amorphous carbon matrix was confirmed by X-ray Diffraction, Rutherford Backscattering measurements and High Resolution Transmission Electron Microscopy. Based on these results, an optical model for the films was developed using the Maxwell-Garnett effective medium with the Drude-Lorentz model representing the optical response of gold and the Tauc-Lorentz model for the amorphous carbon. The gold volume fraction and particle size obtained from the fitting processes were comparable to those from the physical characterization. The analysis of the ellipsometric spectra for all the samples showed strong changes in the optical properties of the carbon films as a consequence of the gold incorporation. These changes were correlated to the structural modification observed by Raman Spectroscopy, which indicated a clustering of the sp{sup 2} phase with a subsequent decrease in the optical gap. Finally, measurements of Reflection and Transmission Spectroscopy were carried out and Transmission Electron Microscopy images were obtained in order to support the ellipsometric model results.

  14. Synthesis and characterization of thin films of nitrided amorphous carbon deposited by laser ablation

    International Nuclear Information System (INIS)

    Rebollo P, B.

    2001-01-01

    The objective of this work is the synthesis and characterization of thin films of amorphous carbon (a-C) and thin films of nitrided amorphous carbon (a-C-N) using the laser ablation technique for their deposit. For this purpose, the physical properties of the obtained films were studied as function of diverse parameters of deposit such as: nitrogen pressure, power density, substrate temperature and substrate-target distance. For the characterization of the properties of the deposited thin films the following techniques were used: a) Raman spectroscopy which has demonstrated being a sensitive technique to the sp 2 and sp 3 bonds content, b) Energy Dispersive Spectroscopy which allows to know semi-quantitatively way the presence of the elements which make up the deposited films, c) Spectrophotometry, for obtaining the absorption spectra and subsequently the optical energy gap of the deposited material, d) Ellipsometry for determining the refraction index, e) Scanning Electron Microscopy for studying the surface morphology of thin films and, f) Profilemetry, which allows the determination the thickness of the deposited thin films. (Author)

  15. Amorphous-tetrahedral diamondlike carbon layered structures resulting from film growth energetics

    Science.gov (United States)

    Siegal, M. P.; Barbour, J. C.; Provencio, P. N.; Tallant, D. R.; Friedmann, T. A.

    1998-08-01

    High-resolution transmission electron microscopy (HRTEM) shows that amorphous-tetrahedral diamondlike carbon (a-tC) films grown by pulsed-laser deposition on Si(100) consist of three-to-four layers, depending on the growth energetics. We estimate the density of each layer using both HRTEM image contrast and Rutherford backscattering spectrometry. The first carbon layer and final surface layer have relatively low density. The bulk of the film between these two layers has higher density. For films grown under the most energetic conditions, there exists a superdense a-tC layer between the interface and bulk layers. The density of all four layers, and the thickness of the surface and interfacial layers, correlate well with the energetics of the depositing carbon species.

  16. Ternary graphene/amorphous carbon/nickel nanocomposite film for outstanding superhydrophobicity

    Science.gov (United States)

    Zhu, Xiaobo; Zhou, Shengguo; Yan, Qingqing

    2018-04-01

    A novel superhydrophobic ternary graphene/amorphous carbon/nickel (G-Ni/a-C:H) carbon-based film was fabricated by a green approach of high-voltage electrochemical deposition without using aqueous solution, which was systematically investigated including the structure and relating applications on self-cleaning and corrosion resistance. Graphene and nickel nano-particle inserts were effective to tailor the feature of nanocrystallite/amorphous microstructure as well as micro-nanoscale hierarchical rose-petal-like surface for G-Ni/a-C:H carbon-based film. Surprisingly, this deposit could present outstanding superhydrophobicity with the contact angle of 158.98 deg and sliding angle of 2.75 deg without any further surface modification meanwhile it could possess fairly well adhesion. Furthermore, the superhydrophobic G-Ni/a-C:H carbon-based film could exhibit excellent corrosion resistance and self-cleaning performances compared to no graphene incorporated deposit. The procedure of fabricating deposit might be simple, scalable, and environmental friendly, indicating a promising prospect for industrial applications in the field of anti-fouling, anti-corrosion and drag resistance.

  17. Correlation between substrate bias, growth process and structural properties of phosphorus incorporated tetrahedral amorphous carbon films

    International Nuclear Information System (INIS)

    Liu Aiping; Zhu Jiaqi; Han Jiecai; Wu Huaping; Jia Zechun

    2007-01-01

    We investigate the growth process and structural properties of phosphorus incorporated tetrahedral amorphous carbon (ta-C:P) films which are deposited at different substrate biases by filtered cathodic vacuum arc technique with PH 3 as the dopant source. The films are characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy, Raman spectroscopy, residual stress measurement, UV/VIS/NIR absorption spectroscopy and temperature-dependent conductivity measurement. The atomic fraction of phosphorus in the films as a function of substrate bias is obtained by XPS analysis. The optimum bias for phosphorus incorporation is about -80 V. Raman spectra show that the amorphous structures of all samples with atomic-scaled smooth surface are not remarkably changed when PH 3 is implanted, but some small graphitic crystallites are formed. Moreover, phosphorus impurities and higher-energetic impinging ions are favorable for the clustering of sp 2 sites dispersed in sp 3 skeleton and increase the level of structural ordering for ta-C:P films, which further releases the compressive stress and enhances the conductivity of the films. Our analysis establishes an interrelationship between microstructure, stress state, electrical properties, and substrate bias, which helps to understand the deposition mechanism of ta-C:P films

  18. A Low-Stress, Elastic, and Improved Hardness Hydrogenated Amorphous Carbon Film

    Directory of Open Access Journals (Sweden)

    Qi Wang

    2015-01-01

    Full Text Available The evolution of hydrogenated amorphous carbon films with fullerene-like microstructure was investigated with a different proportion of hydrogen supply in deposition. The results showed at hydrogen flow rate of 50 sccm, the deposited films showed a lower compressive stress (lower 48.6%, higher elastic recovery (higher 19.6%, near elastic recovery rate 90%, and higher hardness (higher 7.4% compared with the films deposited without hydrogen introduction. Structural analysis showed that the films with relatively high sp2 content and low bonded hydrogen content possessed high hardness, elastic recovery rate, and low compressive stress. It was attributed to the curved graphite microstructure, which can form three-dimensional covalently bonded network.

  19. Amorphous carbon film growth on Si: Correlation between stress and generation of defects into the substrate

    International Nuclear Information System (INIS)

    Brusa, R.S.; Macchi, C.; Mariazzi, S.; Karwasz, G.P.; Laidani, N.; Bartali, R.; Anderle, M.

    2005-01-01

    Amorphous carbon films of several thicknesses were prepared by graphite sputtering on crystalline silicon substrate. The samples were depth profiled with positron annihilation spectroscopy for open-volume measurements and characterized for their residual internal stress. It was found that after film growth the substrate presents vacancy-like defects decorated by oxygen in a layer extending in the substrate by several tens of nanometers beyond the film/Si interface. The width of the defected layer and the decoration of vacancy-like defects are directly and inversely proportional to the measured intensity of the residual stress, respectively. These findings indicate the existence of a relaxation mechanism of the stress in the films that involves deeply the substrate. The decorated vacancy-like defects are suggested to be bounded to dislocations induced in the substrate by the stress relaxation

  20. X-ray and neutron scattering from amorphous diamondlike carbon and hydrocarbon films

    International Nuclear Information System (INIS)

    Findeisen, E.

    1994-10-01

    In this report amorphous, diamondlike, carbon and hydrocarbon films are investigated by two different methods, namely, X-ray scattering and a combination of X-ray and neutron reflectivity. As specular reflectivity probes the scattering length density profile of a sample perpendicular to its surface, the combination of X-ray and neutron reflectivity reveals the nuclei density of both carbon and hydrogen separately. This allows to calculate the concentration of hydrogen in the films, which varies in the presented experiments between 0 and 36 atomic %. This method is a new and nondestructive technique to determine the concentration of hydrogen within an error of about ±1 at. % in samples with sharp interfaces. It is well suited for thin diamondlike carbon films. X-ray scattering is used to obtain structural information on the atomic scale, especially the average carbon-carbon distance and the average coordination number of the carbon atoms. As grazing incidence diffraction experiments were not successful, free-standing films are used for the scattering experiments with synchrotron light. However, the scattered intensity for large scattering vectors is, in spite of the intense primary beam, very weak, and therefore the accuracy of the obtained structural parameter is not sufficient to prove the diamondlike properties also on the atomic scale. (au) (10 tabs., 76 ills., 102 refs.)

  1. Thermal stability of amorphous carbon films grown by pulsed laser deposition

    Science.gov (United States)

    Friedmann, T. A.; McCarty, K. F.; Barbour, J. C.; Siegal, M. P.; Dibble, Dean C.

    1996-03-01

    The thermal stability in vacuum of amorphous tetrahedrally coordinated carbon (a-tC) films grown on Si has been assessed by in situ Raman spectroscopy. Films were grown in vacuum on room-temperature substrates using laser fluences of 12, 22, and 45 J/cm2 and in a background gas of either hydrogen or nitrogen using a laser fluence of 45 J/cm2. The films grown in vacuum at high fluence (≳20J/cm2) show little change in the a-tC Raman spectra with temperature up to 800 °C. Above this temperature the films convert to glassy carbon (nanocrystalline graphite). Samples grown in vacuum at lower fluence or in a background gas (H2 or N2) at high fluence are not nearly as stable. For all samples, the Raman signal from the Si substrate (observed through the a-tC film) decreases in intensity with annealing temperature indicating that the transparency of the a-tC films is decreasing with temperature. These changes in transparency begin at much lower temperatures (˜200 °C) than the changes in the a-tC Raman band shape and indicate that subtle changes are occurring in the a-tC films at lower temperatures.

  2. Nanocomposite metal amorphous-carbon thin films deposited by hybrid PVD and PECVD technique.

    Science.gov (United States)

    Teixeira, V; Soares, P; Martins, A J; Carneiro, J; Cerqueira, F

    2009-07-01

    Carbon based films can combine the properties of solid lubricating graphite structure and hard diamond crystal structure, i.e., high hardness, chemical inertness, high thermal conductivity and optical transparency without the crystalline structure of diamond. Issues of fundamental importance associated with nanocarbon coatings are reducing stress, improving adhesion and compatibility with substrates. In this work new nanocomposite coatings with improved toughness based in nanocrystalline phases of metals and ceramics embedded in amorphous carbon matrix are being developed within the frame of a research project: nc-MeNxCy/a-C(Me) with Me = Mo, Si, Al, Ti, etc. Carbide forming metal/carbon (Me/C) composite films with Me = Mo, W or Ti possess appropriate properties to overcome the limitation of pure DLC films. These novel coating architectures will be adopted with the objective to decrease residual stress, improve adherence and fracture toughness, obtain low friction coefficient and high wear-resistance. Nanocomposite DLC's films were deposited by hybrid technique using a PVD-Physically Vapor Deposition (magnetron sputtering) and Plasma Enhanced Chemical Vapor Deposition (PECVD), by the use of CH4 gas. The parameters varied were: deposition time, substrate temperature (180 degrees C) and dopant (Si + Mo) of the amorphous carbon matrix. All the depositions were made on silicon wafers and steel substrates precoated with a silicon inter-layer. The characterisation of the film's physico-mechanical properties will be presented in order to understand the influence of the deposition parameters and metal content used within the a-C matrix in the thin film properties. Film microstructure and film hybridization state was characterized by Raman Spectroscopy. In order to characterize morphology SEM and AFM will be used. Film composition was measured by Energy-Dispersive X-ray analysis (EDS) and by X-ray photoelectron spectroscopy (XPS). The contact angle for the produced DLC's on

  3. Optical properties of plasma deposited amorphous carbon nitride films on polymer substrates

    Energy Technology Data Exchange (ETDEWEB)

    Mohamed, S.H., E-mail: abo_95@yahoo.co [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); El-Hossary, F.M. [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); Gamal, G.A.; Kahlid, M.M. [Physics Department, Faculty of Science, South Valley University, 83523 Qena (Egypt)

    2010-01-01

    Amorphous carbon nitride thin films were deposited on polymer substrates using radio frequency (rf) plasma in a mixture of nitrogen (N{sub 2}) and acetylene (C{sub 2}H{sub 2}) gasses. The samples were prepared at different rf plasma power (350, 400, 450, 500, and 550 W), at constant plasma exposure time of 10 min, and constant N{sub 2}/C{sub 2}H{sub 2} ratio of 50%. The crystal structure and surface morphology of the prepared samples were examined using X-ray diffraction and atomic force microscopy analysis, respectively. The absence of the carbon nitride diffraction peaks confirms the amorphous nature of these films. The root mean square roughness of the films increased from 3.77 to 25.22 nm as the power increased from 350 to 550 W. The thickness and the deposition rate were found to increase with increasing plasma power. Over the whole studied wavelength range, from 200 to 2500 nm, the transmittance decreased with increasing plasma power. A shift in the onset of absorption towards higher wavelengths with increasing plasma power, indicating a decrease in the optical band gap, has been observed. The refractive index values were found to decrease while the extinction coefficient increased with increasing plasma power.

  4. Optical properties of plasma deposited amorphous carbon nitride films on polymer substrates

    Science.gov (United States)

    Mohamed, S. H.; El-Hossary, F. M.; Gamal, G. A.; Kahlid, M. M.

    2010-01-01

    Amorphous carbon nitride thin films were deposited on polymer substrates using radio frequency (rf) plasma in a mixture of nitrogen (N 2) and acetylene (C 2H 2) gasses. The samples were prepared at different rf plasma power (350, 400, 450, 500, and 550 W), at constant plasma exposure time of 10 min, and constant N 2/C 2H 2 ratio of 50%. The crystal structure and surface morphology of the prepared samples were examined using X-ray diffraction and atomic force microscopy analysis, respectively. The absence of the carbon nitride diffraction peaks confirms the amorphous nature of these films. The root mean square roughness of the films increased from 3.77 to 25.22 nm as the power increased from 350 to 550 W. The thickness and the deposition rate were found to increase with increasing plasma power. Over the whole studied wavelength range, from 200 to 2500 nm, the transmittance decreased with increasing plasma power. A shift in the onset of absorption towards higher wavelengths with increasing plasma power, indicating a decrease in the optical band gap, has been observed. The refractive index values were found to decrease while the extinction coefficient increased with increasing plasma power.

  5. Short-pulse-laser-induced optical damage and fracto-emission of amorphous, diamond-like carbon films

    Science.gov (United States)

    Sokolowski-Tinten, Klaus; Ziegler, Wolfgang; von der Linde, Dietrich; Siegal, Michael P.; Overmyer, D. L.

    2005-03-01

    Short-pulse-laser-induced damage and ablation of thin films of amorphous, diamond-like carbon have been investigated. Material removal and damage are caused by fracture of the film and ejection of large fragments. The fragments exhibit a delayed, intense and broadband emission of microsecond duration. Both fracture and emission are attributed to the laser-initiated relaxation of the high internal stresses of the pulse laser deposition-grown films.

  6. Formation of hydrogenated amorphous carbon films of controlled hardness from a methane plasma

    International Nuclear Information System (INIS)

    Vandentop, G.J.; Kawasaki, M.; Nix, R.M.; Brown, I.G.; Salmeron, M.; Somorjai, G.A.; Department of Chemistry, University of California at Berkeley, Berkeley, California 94720)

    1990-01-01

    Studies of amorphous hydrogenated carbon (a-C:H) film deposition revealed that methyl radicals are the precursor species responsible for the bulk mass deposition of the films, while the ions act to improve the mechanical properties. The films were deposited on Si(100) substrates both on the powered (negatively self-biased) and on the grounded electrodes from a methane rf plasma (13.56 MHz) at 68 to 70 mTorr and 300 to 370 K. The films produced on the powered electrode exhibited superior mechanical properties, such as high hardness. A mass spectrometer was used to identify neutral species and positive ions incident on the electrodes from the plasma, and also to measure ion energies. Methyl radicals were incident on the electrode surface with an estimated flux of 10 16 cm -2 s -1 , for a rf power of 50 W. Methyl radicals appear to be the dominant intermediates in the growth of the soft carbon polymer, and there is a remarkable decrease in deposition rate due to the introduction of NO, a radical scavenger. A novel pulsed biasing technique was used so that the role of ions in the plasma could be studied separately. It was found that the hardness of the films depends on the power supplied by the ions to the growing film surface (the time averaged difference between the plasma potential and the electrode potential), but not on the energy of individual ions. The pulsed biasing technique offers an efficient method to adjust the film hardness by independent control of the neutral radical and ion fluxes to the surface

  7. The multilayered structure of ultrathin amorphous carbon films synthesized by filtered cathodic vacuum arc deposition

    KAUST Repository

    Wang, Na

    2013-08-01

    The structure of ultrathin amorphous carbon (a-C) films synthesized by filtered cathodic vacuum arc (FCVA) deposition was investigated by high-resolution transmission electron microscopy, electron energy loss spectroscopy, and x-ray photoelectron spectroscopy. Results of the plasmon excitation energy shift and through-thickness elemental concentration show a multilayered a-C film structure comprising an interface layer consisting of C, Si, and, possibly, SiC, a buffer layer with continuously increasing sp 3 fraction, a relatively thicker layer (bulk film) of constant sp 3 content, and an ultrathin surface layer rich in sp 2 hybridization. A detailed study of the C K-edge spectrum indicates that the buffer layer between the interface layer and the bulk film is due to the partial backscattering of C+ ions interacting with the heavy atoms of the silicon substrate. The results of this study provide insight into the minimum thickness of a-C films deposited by FCVA under optimum substrate bias conditions. Copyright © 2013 Materials Research Society.

  8. A study of the chemical, mechanical, and surface properties of thin films of hydrogenated amorphous carbon

    Energy Technology Data Exchange (ETDEWEB)

    Vandentop, G.J.

    1990-07-01

    Amorphous hydrogenated carbon (a-C:H) films were studied with the objective of elucidating the nucleation and growth mechanisms, and the origin of their unique physical properties. The films were deposited onto Si(100) substrates both on the powered (negatively self-biased) and on the grounded electrodes from methane in an rf plasma (13.56 MHz) at 65 mTorr and 300 to 370 K. The films produced at the powered electrode exhibited superior mechanical properties, such as high hardness. A mass spectrometer was used to identify neutral species and positive ions incident on the electrodes from the plasma, and also to measure ion energies. The effect of varying ion energy flux on the properties of a-C:H films was investigated using a novel pulsed biasing technique. It was demonstrated that ions were not the dominant deposition species as the total ion flux measured was insufficient to account for the observed deposition rate. The interface between thin films of a-C:H and silicon substrates was investigated using angle resolved x-ray photoelectron spectroscopy. A silicon carbide layer was detected at the interface of a hard a-C:H film formed at the powered electrode. At the grounded electrode, where the kinetic energy is low, no interfacial carbide layer was observed. Scanning tunneling microscopy and high energy electron energy loss spectroscopy was used to investigate the initial stages of growth of a-C:H films. On graphite substrates, films formed at the powered electrode were observed to nucleate in clusters approximately 50 {Angstrom} in diameter, while at the grounded electrode no cluster formation was observed. 58 figs.

  9. Strength and Fracture Resistance of Amorphous Diamond-Like Carbon Films for MEMS

    Directory of Open Access Journals (Sweden)

    K. N. Jonnalagadda

    2009-01-01

    Full Text Available The mechanical strength and mixed mode I/II fracture toughness of hydrogen-free tetrahedral amorphous diamond-like carbon (ta-C films, grown by pulsed laser deposition, are discussed in connection to material flaws and its microstructure. The failure properties of ta-C were obtained from films with thicknesses 0.5–3 μm and specimen widths 10–20 μm. The smallest test samples with 10 μm gage section averaged a strength of 7.3 ± 1.2 GPa, while the strength of 20-μm specimens with thicknesses 0.5–3 μm varied between 2.2–5.7 GPa. The scaling of the mechanical strength with specimen thickness and dimensions was owed to deposition-induced surface flaws, and, only in the smallest specimens, RIE patterning generated specimen sidewall flaws. The mode I fracture toughness of ta-C films is KIc=4.4±0.4 MPam, while the results from mixed mode I/II fracture experiments with cracks arbitrarily oriented in the plane of the film compared very well with theoretical predictions.

  10. Ion-Assisted Pulsed Laser Deposition of amorphous tetrahedral-coordinated carbon films

    Science.gov (United States)

    Friedmann, T. A.; Tallant, D. R.; Sullivan, J. P.; Siegal, M. P.; Simpson, R. L.

    1994-04-01

    A parametric study has been performed of amorphous tetrahedral carbon (a-tC) films produced by ion-assisted pulsed laser deposition (IAPLD). The ion voltage, current density, and feed gas composition (nitrogen in argon) have been varied. The resultant films were characterized by thickness, residual stress, Raman spectroscopy, and electrical resistivity. The Raman spectra have been fit to two gaussian peaks, the so called graphitic (G) peak and the disorder (D) peak. It has been found that the magnitude of the D peak and the residual compressive stress are inversely correlated. At low beam voltages and currents, the magnitude of the D peak is low, increasing as the ion beam voltage and current are raised. The ion beam voltage has the most dramatic effect on the magnitude of the D peak. At low voltages (200-500 V) the magnitude of the D peak is greater for ion beams with high percentages of nitrogen possibly indicative of C-N bonding in the films. At higher voltages (500-1500 V) the D peak intensity is less sensitive to the nitrogen content of the beam.

  11. Spectroscopic properties of nitrogen doped hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition

    OpenAIRE

    Y., Hayashi; G., Yu; M. M., Rahman; K. M., Krishna; Tetsuo, Soga; Takashi, Jimbo; Masayoshi, Umeno

    2001-01-01

    Nitrogen doped hydrogenated amorphous carbon thin films have been deposited by rf plasma-enhanced chemical vapor deposition using CH4 as the source of carbon and with different nitrogen flow rates (N2/CH4 gas ratios between 0 and 3), at 300 K. The dependence modifications of the optical and the structural properties on nitrogen incorporation were investigated using different spectroscopic techniques, such as, Raman spectroscopy, Fourier transform infrared spectroscopy, x-ray photoelectron spe...

  12. Studies of hydrogen incorporation in hydrogenated amorphous carbon films by infrared absorption spectroscopy

    International Nuclear Information System (INIS)

    Alameh, R.; Bounouh, Y.; Sadki, A.; Naud, C.; Theye, M.L.

    1997-01-01

    Author.Hydrogenated amorphous carbon (a-C:H) films presently attract considerable interest because of their potential applications in the domain of multifunctional coatings: transparent in the infrared, very hard, chemically inert, etc...This material is rather complex since it contains C atoms in both sp 3 (diamond) and sp 2 (graphite) electronic configurations, as well as a large concentration of H atoms. Its properties are strongly dependent on the deposition conditions which determine the film microstructure, i.e. the relative proportions of sp 3 and sp 2 C sites, their connection in the network and the hydrogen bonding modes. It has been suggested that the sp 2 C sites tend to cluster into unsaturated chains ans rings, which are then embedded in the sp 3 C sites m atrix . Hydrogen incorporation plays a crucial role in this intrinsic microheterogeneity, which determines the electronic properties, and especially the gap value, of a-C:H. We here present and discuss the results of Fourrier transform infrared absorption spectroscopy measurements performed on a-C:H films prepared under different conditions and submitted to controlled annealing cycles, which exhibit quite different optical gap values (from 1 to 2.5 eV). We carefully analyze the absorption bands detected in the 400-7500 cm -1 spectral range in terms of the vibration modes of C-H and C-C bonds in different local environments and we interpret the results in relation with the film microstructure and optical properties. Special attention is also paid to the absorption background and to the variations of the whole absorption spectra with measurement temperature

  13. Electroanalytical performance of nitrogen-containing tetrahedral amorphous carbon thin-film electrodes.

    Science.gov (United States)

    Yang, Xingyi; Haubold, Lars; DeVivo, Gabriel; Swain, Greg M

    2012-07-17

    Tetrahedral amorphous carbon (ta-C) consists of a mixture of sp(3)- and sp(2)-bonded carbon ranging from 60 to 40% (sp(3)/sp(3)+sp(2)) depending on the deposition conditions. The physical, chemical, and electrochemical properties depend on the sp(2)/sp(3) bonding ratio as well as the presence of incorporated impurities, such as hydrogen or nitrogen. The ability to grow ta-C at lower temperatures (25-100 °C) on a wider variety of substrates as compared to CVD diamond is an advantage of this material. Herein, we report on the structural and electrochemical properties of nitrogen-incorporated ta-C thin films (ta-C:N). The incorporation of nitrogen into the films decreases the electrical resistivity from 613 ± 60 (0 sccm N(2)) to 1.10 ± 0.07 Ω-cm (50 sccm N(2)), presumably by increasing the sp(2)-bonded carbon content and the connectedness of these domains. Similar to boron-doped diamond, these materials are characterized by a low background voltammetric current, a wide working potential window (~ 3 V), and relatively rapid electron-transfer kinetics for aqueous redox systems, including Fe(CN)(6)(-3/-4) and Ru(NH(3))(6)(+3/+2), without conventional pretreatment. Additionally, there is weak molecular adsorption of polar molecules (methylene blue) on the ta-C surface. Overall, the properties of the ta-C and ta-C:N electrodes are such that they could be excellent new choices for electroanalytical measurements.

  14. Amorphous iron (II) carbonate

    DEFF Research Database (Denmark)

    Sel, Ozlem; Radha, A.V.; Dideriksen, Knud

    2012-01-01

    Abstract The synthesis, characterization and crystallization energetics of amorphous iron (II) carbonate (AFC) are reported. AFC may form as a precursor for siderite (FeCO3). The enthalpy of crystallization (DHcrys) of AFC is similar to that of amorphous magnesium carbonate (AMC) and more...

  15. Optical Properties Of As-Deposited Amorphous Carbon Film Fromvarious Substrate Temperaturesvia Custom-Made-CVD

    Directory of Open Access Journals (Sweden)

    A. Ishak

    2015-01-01

    Full Text Available Abstract We were deposited the as-deposited amorphous carbon via a modified custom-made-CVD in the range of 350oC to 550oC at atmospheric pressure with constant of negative bias -40V and argon gas for 1 hour deposition. We used vaporized of palm oil as a carbon source into the chamber. It was observed above 90 of light were transmitted to the samples instead of sample 500oC 80. The as-deposited thin film grown on glass and p-type silicon we found uniform smooth dark grey colored and thickness in the range of 155 to 190nm. It was found thickness less than 170nm brought less significant impact to the reduction of transmission percentage. In relationship with structural image in FESEM the absorption coefficient was found high as the size of particles were big rough and agglomerated. The result showed the optical band gaps for 550oC to 350oC were 0.5eV 1.3eV 0.1eV 0.7eV and 1.4eV respectively. The optical band gaps of 400oC and 350oC were suitable for solar cell applications.

  16. Plasma-enhanced chemical-vapor deposition of titanium aluminum carbonitride/amorphous-carbon nanocomposite thin films

    Science.gov (United States)

    Shieh, Jiann; Hon, Min Hsiung

    2002-01-01

    A new nanocomposite, titanium aluminum carbonitride/amorphous-carbon thin film was prepared by radio-frequency (rf) plasma-enhanced chemical-vapor deposition using titanium tetrachloride, aluminum trichloride, methane, and nitrogen as reactants. Hydrogen was used as carrier gases. A substrate temperature of 500 °C and an rf power of 100 W were used in all depositions. The films were characterized by x-ray powder diffraction, Raman spectroscopy, x-ray photoelectron spectroscopy, transmission electron microscopy, and scanning electron microscopy. The results show that nanograins of titanium aluminum carbonitride were embedded in an amorphous-carbon matrix. The nanograins had a (200) preferred orientation with columnar cross-section morphology. Mechanical properties were analyzed by nanoindentation and hardness was demonstrated to increase via this microstructure design approach. The effects of microstructure on mechanical properties were also determined.

  17. Plasma-enhanced chemical-vapor deposition of titanium aluminum carbonitride/amorphous-carbon nanocomposite thin films

    International Nuclear Information System (INIS)

    Shieh Jiann; Hon, M.H.

    2002-01-01

    A new nanocomposite, titanium aluminum carbonitride/amorphous-carbon thin film was prepared by radio-frequency (rf) plasma-enhanced chemical-vapor deposition using titanium tetrachloride, aluminum trichloride, methane, and nitrogen as reactants. Hydrogen was used as carrier gases. A substrate temperature of 500 deg. C and an rf power of 100 W were used in all depositions. The films were characterized by x-ray powder diffraction, Raman spectroscopy, x-ray photoelectron spectroscopy, transmission electron microscopy, and scanning electron microscopy. The results show that nanograins of titanium aluminum carbonitride were embedded in an amorphous-carbon matrix. The nanograins had a (200) preferred orientation with columnar cross-section morphology. Mechanical properties were analyzed by nanoindentation and hardness was demonstrated to increase via this microstructure design approach. The effects of microstructure on mechanical properties were also determined

  18. Electron-beam broadening in amorphous carbon films in low-energy scanning transmission electron microscopy.

    Science.gov (United States)

    Drees, H; Müller, E; Dries, M; Gerthsen, D

    2018-02-01

    Resolution in scanning transmission electron microscopy (STEM) is ultimately limited by the diameter of the electron beam. The electron beam diameter is not only determined by the properties of the condenser lens system but also by electron scattering in the specimen which leads to electron-beam broadening and degradation of the resolution with increasing specimen thickness. In this work we introduce a new method to measure electron-beam broadening which is based on STEM imaging with a multi-segmented STEM detector. We focus on STEM at low electron energies between 10 and 30 keV and use an amorphous carbon film with known thickness as test object. The experimental results are compared with calculated beam diameters using different analytical models and Monte-Carlo simulations. We find excellent agreement of the experimental data with the recently published model by Gauvin and Rudinsky [1] for small t/λ el (thickness to elastic mean free path) values which are considered in our study. Copyright © 2017 Elsevier B.V. All rights reserved.

  19. Amorphous carbon thin films deposited on Si and PET: Study of interface states

    International Nuclear Information System (INIS)

    Mariazzi, S.; Macchi, C.; Karwasz, G.P.; Brusa, R.S.; Laidani, N.; Bartali, R.; Gottardi, G.; Anderle, M.

    2005-01-01

    Thin carbon films with various thickness, deposited on different substrates (Si and poly-ethylene-terephthalate) at the same operating conditions in a ratio frequency plasma enhanced chemical vapor deposition system were characterized by Doppler broadening spectroscopy. The films and the substrates were depth profiled by a slow positron beam. The aim od these measurements was to study the open volume structure and the interface of the films. It was found that, independently from the substrate, the films were homogeneous and exhibited to some open volume distribution. On the contrary, the effective positron diffusion length in the Si substrate was found to change with the thickness of the carbon films. This behaviour was found to change with the thickness of the carbon films. This behaviour was interpreted as a change in the electric field at the carbon/silicon interface. (author)

  20. Amorphous Carbon: State of the Art - Proceedings of the 1st International Specialist Meeting on Amorphous Carbon (smac '97)

    Science.gov (United States)

    Silva, S. R. P.; Robertson, J.; Milne, W. I.; Amaratunga, G. A. J.

    1998-05-01

    The Table of Contents for the full book PDF is as follows: * Preface * GROWTH AND STRUCTURE * The Structure of Tetrahedral Amorphous Carbon * Growth of DLC Films and Related Structure and Properties * Deposition Mechanism of Diamond-Like Carbon * Relaxation of sp3 Bonds in Hydrogen Free Carbon Films During Growth * MODELLING * Correlations Between Microstructure and Electronic Properties in Amorphous Carbon Based Materials * Review of Monte Carlo Simulations of Diamondlike Amorphous Carbon: Bulk, Surface, and Interface Structural Properties * DEPOSITION * Preparation of Disordered Amorphous and Partially Ordered Nano Clustered Carbon Films by Arc Deposition: A Critical Review * Plasma Deposition of Diamond-Like Carbon in an ECR-RF Discharge * Deposition of Amorphous Hydrogenated Carbon-Nitrogen Films by PECVD Using Several Hydrocarbon / Nitrogen Containing Gas Mixtures * ELECTRONIC STRUCTURE * 'Defects' and Their Detection in a-C and a-C:H * Valence Band and Gap State Spectroscopy of Amorphous Carbon by Photoelectron Emission Techniques * Photoluminescence Spectroscopy: A Probe for Inhomogeneous Structure in Polymer-Like Amorphous Carbon * Raman Characterization of Amorphous and Nanocrystalline sp3 Bonded Structures * Ultraviolet Raman Spectroscopy of Tetrahedral Amorphous Carbon Thin Films * Excitation Energy Dependent Raman and Photoluminescence Spectra of Hydrogenated Amorphous Carbon * MECHANICAL PROPERTIES * Pulsed Laser Deposited a-C: Growth, Structure and Mechanical Properties * Mechanical Properties of Laser-Assisted Deposited Amorphous Carbon Films * Mechanical and Morphology Study on Tetrahedral Amorphous Carbon Films * Time-Dependent Changes in the Mechanical Properties of Diamond-Like Carbon Films * ELECTRONIC PROPERTIES * Electronic Transport in Amorphous Carbon * Electronic Properties of Undoped/Doped Tetrahedral Amorphous Carbon * The Inclusion of Graphitic Nanoparticles in Semiconducting Amorphous Carbon to Enhance Electronic Transport Properties

  1. Hydrogenated amorphous carbon films on steel balls and Si substrates: Nanostructural evolutions and their trigging tribological behaviors

    Science.gov (United States)

    Wang, Yongfu; Wang, Yan; Zhang, Xingkai; Shi, Jing; Gao, Kaixiong; Zhang, Bin; Zhang, Junyan

    2017-10-01

    In this study, we prepared hydrogenated amorphous carbon films on steel balls and Si substrates (steel ball- and Si substrate-films) with different deposition time, and discussed their carbon nanostructural evolutions and tribological behaviors. The steel ball-film structure started to be graphite-like structure and then gradually transformed into fullerene-like (FL) structure. The Si substrate-film structure began in FL structure and kept it through the thickness. The difference may be result from the competition between high starting substrate temperature after additional nitriding applied on the steel balls (its supply power is higher than that in the film deposition), and relaxation of compressive stress from energized ion bombardment in film deposition process. The FL structural film friction couples could achieve ultra-low friction in open air. In particular, the Si substrate-film with 3 h, against the steel ball-film with 2 h and 3 h, exhibited super-low friction (∼0.009) and superlong wear life (∼5.5 × 105 cycles). Our result could widen the superlubricity scope from previously high load and velocity, to middle load and velocity.

  2. Hard coating of ultrananocrystalline diamond/nonhydrogenated amorphous carbon composite films on cemented tungsten carbide by coaxial arc plasma deposition

    Science.gov (United States)

    Naragino, Hiroshi; Egiza, Mohamed; Tominaga, Aki; Murasawa, Koki; Gonda, Hidenobu; Sakurai, Masatoshi; Yoshitake, Tsuyoshi

    2016-08-01

    Ultrananocrystalline diamond (UNCD)/nonhydrogenated amorphous carbon (a-C) composite (UNCD/a-C) films were deposited on cemented carbide containing Co by coaxial arc plasma deposition. With decreasing substrate temperature, the hardness was enhanced accompanied by an enhancement in the sp3/(sp2 + sp3). Energy-dispersive X-ray and secondary ion mass spectrometry spectroscopic measurements exhibited that the diffusion of Co atoms from the substrates into the films hardly occurs. The film deposited at room temperature exhibited the maximum hardness of 51.3 GPa and Young's modulus of 520.2 GPa, which evidently indicates that graphitization induced by Co in the WC substrates, and thermal deformation from sp3 to sp2 bonding are suppressed. The hard UNCD/a-C films can be deposited at a thickness of approximately 3 μm, which is an order larger than that of comparably hard a-C films. The internal compressive stress of the 51.3-GPa film is 4.5 GPa, which is evidently smaller than that of comparably hard a-C films. This is a reason for the thick deposition. The presence of a large number of grain boundaries in the film, which is a structural specific to UNCD/a-C films, might play a role in releasing the internal stress of the films.

  3. Electrical transport and morphological study of PLD-grown nanostructured amorphous carbon thin films

    International Nuclear Information System (INIS)

    Kant, K Mohan; Reddy, N Mahipal; Rama, N; Sethupathi, K; Rao, M S Ramachandra

    2006-01-01

    Nanostructured carbon thin films have been actively investigated recently for their electroresistance (ER) properties. Furthermore, carbon films with nonlinear current-voltage (I-V) characteristics have potential application in field-emission devices. This has motivated us to study the effect of various growth parameters on the physical and morphological properties of carbon films grown by pulsed laser deposition (PLD). Carbon films have been deposited using a graphite target at different partial pressures of argon. The morphology of film surfaces deposited at various growth conditions was monitored using an atomic force microscope (AFM). AFM studies showed nanostructured grain growth with average grain size of about 80-90 nm. As the deposition time was decreased down to 1 min, the grain size was also found to decrease correspondingly. From Raman spectroscopic measurements an increase in the I(D)/I(G) ratio and a decrease in FWHM (G) clearly revealed the promotion of sp 2 hybridization as the substrate temperature increased. All the films show semiconducting behaviour with the dominant conduction process being the three-dimensional (3D) variable range hopping (VRH) mechanism. Nonlinear I-V curves were obtained for carbon films deposited on p-type Si indicating diode-like behaviour. The most significant result of this study was the observation of a large electroresistance value

  4. Crystalline and amorphous phases in carbon nitride films produced by intense high-pressure plasma

    Energy Technology Data Exchange (ETDEWEB)

    Gurarie, V.N.; Orlov, A.V.; Bursill, L.A.; JuLin, P.; Nugent, K.W.; Chon, J.W.; Prawer, S

    1997-12-31

    Carbon-nitride films are prepared using a high-intensity pulsed plasma deposition technique. A wide range of nitrogen pressure and discharge intensity are used to investigate their effect on the morphology, nitrogen content, structure, bonding, phase composition and mechanical characteristics of the CN films deposited. Increasing the nitrogen pressure from 0.1 atm to 10 atm results in an increase of nitrogen incorporation into CN films to maximum of 45 at %. Under the high-energy density deposition conditions which involve ablation of the quartz substrate the CN films are found to incorporate in excess of 60 at %N. Raman spectra of these films contain sharp peaks characteristic of a distinct crystalline CN phase. TEM diffraction patterns for the films deposited below 1 atm unambiguously show the presence of micron-sized crystals displaying a cubic symmetry. (authors). 12 refs., 4 figs.

  5. Enhanced efficiency of hybrid amorphous silicon solar cells based on single-walled carbon nanotubes and polymer composite thin film

    Science.gov (United States)

    Rajanna, Pramod M.; Gilshteyn, Evgenia P.; Yagafarov, Timur; Aleekseeva, Alena K.; Anisimov, Anton S.; Neumüller, Alex; Sergeev, Oleg; Bereznev, Sergei; Maricheva, Jelena; Nasibulin, Albert G.

    2018-03-01

    We report a simple approach to fabricate hybrid solar cells (HSCs) based on a single-walled carbon nanotube (SWCNT) film and thin film hydrogenated amorphous silicon (a-Si:H). Randomly oriented high-quality SWCNTs with conductivity enhanced by means of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate are used as a window layer and a front electrode. A series of HSCs are fabricated in ambient conditions with varying SWCNT film thicknesses. The polymethylmethacrylate layer drop-casted on fabricated HSCs reduces the reflection fourfold and enhances the short-circuit J sc , open-circuit V oc , and efficiency by nearly 10%. A state-of-the-art J-V performance is shown for SWCNT/a-Si HSC with an open-circuit voltage of 900 mV and an efficiency of 3.4% under simulated one-sun AM 1.5 G direct illumination.

  6. Spectroscopic properties of nitrogen doped hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Hayashi, Y.; Yu, G.; Rahman, M. M.; Krishna, K. M.; Soga, T.; Jimbo, T.; Umeno, M.

    2001-01-01

    Nitrogen doped hydrogenated amorphous carbon thin films have been deposited by rf plasma-enhanced chemical vapor deposition using CH 4 as the source of carbon and with different nitrogen flow rates (N 2 /CH 4 gas ratios between 0 and 3), at 300 K. The dependence modifications of the optical and the structural properties on nitrogen incorporation were investigated using different spectroscopic techniques, such as, Raman spectroscopy, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, ultraviolet-visible (UV-VIS) spectroscopy, electron spin resonance (ESR), photoluminescence (PL) and spectroscopic ellipsometry (SE). Raman spectroscopy and IR absorption reveal an increase in sp 2 -bonded carbon or a change in sp 2 domain size with increasing nitrogen flow rate. It is found that the configuration of nitrogen atoms incorporated into an amorphous carbon network gradually changes from nitrogen atoms surrounded by three (σ bonded) to two (π bonded) neighboring carbons with increasing nitrogen flow rate. Tauc optical gap is reduced from 2.6 to 2.0 eV, and the ESR spin density and the peak-to-peak linewidth increase sharply with increasing nitrogen flow rate. Excellent agreement has been found between the measured SE data and modeled spectra, in which an empirical dielectric function of amorphous materials and a linear void distribution along the thickness have been assumed. The influence of nitrogen on the electronic density of states is explained based on the optical properties measured by UV-VIS and PL including nitrogen lone pair band. [copyright] 2001 American Institute of Physics

  7. Thin films of hydrogenated amorphous carbon (a-C:H) obtained through chemical vapor deposition assisted by plasma

    International Nuclear Information System (INIS)

    Mejia H, J.A.; Camps C, E.E.; Escobar A, L.; Romero H, S.; Chirino O, S.; Muhl S, S.

    2004-01-01

    Films of hydrogenated amorphous carbon (a-C:H) were deposited using one source of microwave plasma with magnetic field (type ECR), using mixtures of H 2 /CH 4 in relationship of 80/20 and 95/05 as precursory gases, with work pressures of 4X10 -4 to 6x10 -4 Torr and an incident power of the discharge of microwaves with a constant value of 400 W. It was analyzed the influence among the properties of the films, as the deposit rate, the composition and the bonding types, and the deposit conditions, such as the flow rates of the precursory gases and the polarization voltage of the sample holders. (Author)

  8. Controllable Electrochemical Activities by Oxidative Treatment toward Inner-Sphere Redox Systems at N-Doped Hydrogenated Amorphous Carbon Films

    Directory of Open Access Journals (Sweden)

    Yoriko Tanaka

    2012-01-01

    Full Text Available The electrochemical activity of the surface of Nitrogen-doped hydrogenated amorphous carbon thin films (a-CNH, N-doped DLC toward the inner sphere redox species is controllable by modifying the surface termination. At the oxygen plasma treated N-doped DLC surface (O-DLC, the surface functional groups containing carbon doubly bonded to oxygen (C=O, which improves adsorption of polar molecules, were generated. By oxidative treatment, the electron-transfer rate for dopamine (DA positively charged inner-sphere redox analyte could be improved at the N-doped DLC surface. For redox reaction of 2,4-dichlorophenol, which induces an inevitable fouling of the anode surface by forming passivating films, the DLC surfaces exhibited remarkably higher stability and reproducibility of the electrode performance. This is due to the electrochemical decomposition of the passive films without the interference of oxygen evolution by applying higher potential. The N-doped DLC film can offer benefits as the polarizable electrode surface with the higher reactivity and higher stability toward inner-sphere redox species. By making use of these controllable electrochemical reactivity at the O-DLC surface, the selective detection of DA in the mixed solution of DA and uric acid could be achieved.

  9. [XPS and Raman spectral analysis of nitrogenated tetrahedral amorphous carbon (ta-C : N) films with different nitrogen content].

    Science.gov (United States)

    Chen, Wang-Shou; Zhu, Jia-Qi; Han, Jie-Cai; Tian, Gui; Tan, Man-Lin

    2009-01-01

    Nitrogenated tetrahedral amorphous carbon (ta-C : N) films were prepared on the polished C--Si substrates by introducing highly pure nitrogen gas into the cathode region and the depositing chamber synchronously using filtered cathodic vacuum arc (FCVA) technology. The nitrogen content in the films was controlled by changing the flow rate of nitrogen gas. The configuration of ta-C : N films was investigated by means of X-ray photoelectron spectroscopy (XPS) and visible Raman spectroscopy. It was shown that the nitrogen content in the films increased from 0.84 at% to 5.37 at% monotonously when the nitrogen flow rate was varied from 2 seem to 20 sccm. The peak position of C (1s) core level moved towards higher binding energy with the increase in nitrogen content. The shift of C (1s) peak position could be ascribed to the chemical bonding between carbon and nitrogen atoms even though more three-fold coordinated sp2 configuration as in graphite was formed when the films were doped with more nitrogen atoms. Additionally, the half width of C(1s) peak gradually was also broadened with increasing nitrogen content. In order to discover clearly the changing regularities of the microstructure of the films, the XPS C(1s) spectra and Raman spectra were deconvoluted using a Gaussian-Lorentzian mixed lineshape. It was shown that the tetrahedral hybridization component was still dominant even though the ratio of sp2/sp3 obtained from C(1s) spectra rose with the increase in nitrogen content. The Raman measurements demonstrated that the G peak position shifted towards higher frequency from 1,561 to 1,578 cm(-1) and the ratio of ID/IG also rose with the increase in nitrogen content. Both results indicated that the graphitizing tendency could occur with the increase in nitrogen content in the films.

  10. Optical Characterization of Amorphous Hydrogenated Carbon (a-C:H) Thin Films Prepared by Single RF Plasma Method

    Science.gov (United States)

    Dogan, Mansuroglu; Kadir, Goksen; Sinan, Bilikmen

    2015-06-01

    Methane (CH4) plasma was used to produce amorphous hydrogenated carbon (a-C:H) films by a single capacitively coupled radio frequency (RF) powered plasma system. The system consists of two parallel electrodes: the upper electrode is connected to 13.56 MHz RF power and the lower one is connected to the ground. Thin films were deposited on glass slides with different sizes and on silicon wafers. The influence of the plasma species on film characteristics was studied by changing the plasma parameters. The changes of plasma species during the deposition were investigated by optical emission spectroscopy (OES). The structural and optical properties were analyzed via Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD) and UV-visible spectroscopy, and the thicknesses of the samples were measured by a profilometer. The sp3/sp2 ratio and the existing H atoms play a significant role in the determination of the chemical properties of thin films in the plasma. The film quality and deposition rate were both increased by raising the power and the flow rate.

  11. Incidence Angle Effect of Energetic Carbon Ions on Deposition Rate, Topography, and Structure of Ultrathin Amorphous Carbon Films Deposited by Filtered Cathodic Vacuum Arc

    KAUST Repository

    Wang, N.

    2012-07-01

    The effect of the incidence angle of energetic carbon ions on the thickness, topography, and structure of ultrathin amorphous carbon (a-C) films synthesized by filtered cathodic vacuum arc (FCVA) was examined in the context of numerical and experimental results. The thickness of a-C films deposited at different incidence angles was investigated in the light of Monte Carlo simulations, and the calculated depth profiles were compared with those obtained from high-resolution transmission electron microscopy (TEM). The topography and structure of the a-C films were studied by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), respectively. The film thickness decreased with the increase of the incidence angle, while the surface roughness increased and the content of tetrahedral carbon hybridization (sp 3) decreased significantly with the increase of the incidence angle above 45° , measured from the surface normal. TEM, AFM, and XPS results indicate that the smoothest and thinnest a-C films with the highest content of sp 3 carbon bonding were produced for an incidence angle of 45°. The findings of this study have direct implications in ultrahigh-density magnetic recording, where ultrathin and smooth a-C films with high sp 3 contents are of critical importance. © 2012 IEEE.

  12. Surface morphology and grain analysis of successively industrially grown amorphous hydrogenated carbon films (a-C:H) on silicon

    Science.gov (United States)

    Catena, Alberto; McJunkin, Thomas; Agnello, Simonpietro; Gelardi, Franco M.; Wehner, Stefan; Fischer, Christian B.

    2015-08-01

    Silicon (1 0 0) has been gradually covered by amorphous hydrogenated carbon (a-C:H) films via an industrial process. Two types of these diamond-like carbon (DLC) coatings, one more flexible (f-DLC) and one more robust (r-DLC), have been investigated. Both types have been grown by a radio frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique with acetylene plasma. Surface morphologies have been studied in detail by atomic force microscopy (AFM) and Raman spectroscopy has been used to investigate the DLC structure. Both types appeared to have very similar morphology and sp2 carbon arrangement. The average height and area for single grains have been analyzed for all depositions. A random distribution of grain heights was found for both types. The individual grain structures between the f- and r-type revealed differences: the shape for the f-DLC grains is steeper than for the r-DLC grains. By correlating the average grain heights to the average grain areas for all depositions a limited region is identified, suggesting a certain regularity during the DLC deposition mechanisms that confines both values. A growth of the sp2 carbon entities for high r-DLC depositions is revealed and connected to a structural rearrangement of carbon atom hybridizations and hydrogen content in the DLC structure.

  13. Evolution of structural and electrical properties of carbon films from amorphous carbon to nanocrystalline graphene on quartz glass by HFCVD.

    Science.gov (United States)

    Zhai, Zihao; Shen, Honglie; Chen, Jieyi; Li, Xuemei; Jiang, Ye

    2018-04-25

    Direct growth of graphene films on glass is of great importance but has so far met with limited success. The non-catalytic property of glass results in the low decomposition ability of hydrocarbon precursors, especially at reduced temperatures (structural and electrical properties of carbon films deposited on quartz glass at 850 °C by hot-filament chemical vapor deposition (HFCVD). The results revealed that the obtained a-C films were all graphite-like carbon films. Structural transition of the deposited films from a-C to nanocrystalline graphene was achieved by raising the hydrogen dilution ratios from 10 % to over 80 %. Based on systematically structural and chemical characterizations, a schematic process with three steps including sp2 chains aggregation, aromatic rings formation and sp3 bonds etch was proposed to interpret the structural evolution. The nanocrystalline graphene films grown on glass by HFCVD exhibited good electrical performance with a carrier mobility of 36.76 cm2/(V·s) and a resistivity of 5.24×10-3 Ω·cm over an area of 1 cm2. Temperature-dependent electrical characterizations revealed that the electronic transport in carbon films was dominated by defect, localised and extended states respectively when increasing the temperature from 75 K to 292 K. The nanocrystalline graphene films presented higher carrier mobility and lower carrier concentration than a-C films, which was mainly attributed to their smaller conductive activation energy. The present investigation provides an effective way for direct growth of graphene films on glass at reduced temperatures and also offers useful insights into the understanding of structural and electrical relationship between a-C and graphene.

  14. The Effect of Stress in the Density of States of Amorphous Carbon Films Determined by X-Ray Excited Auger Electron Spectroscopy

    Directory of Open Access Journals (Sweden)

    P. F. Barbieri

    2017-01-01

    Full Text Available Amorphous carbon films can be prepared with a large variety of structure and have been used in a number of technological applications. Many of their properties have been determined, but very little is known concerning the effect of pressure on their properties. In this work we investigate the influence of pressure of graphite-like amorphous carbon films on the density of states (DOS using X-ray Excited Auger Electron Spectroscopy (XAES and the second derivate method of the XAES. The films were deposited by ion beam deposition and simultaneously bombarded with argon, which is responsible for the variation of the film stress, reaching extremely high values (4.5 GPa. Marked variations of the density of states of the pπ, pσ, sp, and s components were observed with increasing stress.

  15. Charged Nanowire-Directed Growth of Amorphous Calcium Carbonate Nanosheets in a Mixed Solvent for Biomimetic Composite Films.

    Science.gov (United States)

    Liu, Yangyi; Liu, Lei; Chen, Si-Ming; Chang, Fu-Jia; Mao, Li-Bo; Gao, Huai-Ling; Ma, Tao; Yu, Shu-Hong

    2018-04-19

    Bio-inspired mineralization is an effective way for fabricating complicated inorganic materials, which inspires us to develop new methods to synthesize materials with fascinating properties. In this article, we report that the charged tellurium nanowires (TeNWs) can be used as bio-macromolecule analogues to direct the formation of amorphous calcium carbonate (ACC) nanosheets (ACCNs) in a mixed solvent. The effects of surface charges and the concentration of the TeNWs on the formation of ACCNs have been investigated. Particularly, the produced ACCNs can be functionalized by Fe3O4 nanoparticles to produce magnetic ACC/Fe3O4 hybrid nanosheets, which can be used to construct ACC/Fe3O4 composite films through a self-evaporation process. Moreover, sodium alginate-ACC nanocomposite films with remarkable toughness and good transmittance can also be fabricated by using such ACCNs as nanoscale building blocks. This mineralization approach in a mixed solvent using charged tellurium nanowires as bio-macromolecule analogues provides a new way for the synthesis of ACCNs, which can be used as nanoscale building blocks for fabrication of biomimetic composite films.

  16. Influence of disorder on localization and density of states in amorphous carbon nitride thin films systems rich in π-bonded carbon atoms

    International Nuclear Information System (INIS)

    Alibart, F.; Lejeune, M.; Durand Drouhin, O.; Zellama, K.; Benlahsen, M.

    2010-01-01

    We discuss in this paper the evolution of both the density of states (DOS) located between the band-tail states and the DOS around the Fermi level N(E F ) in amorphous carbon nitride films (a-CN x ) as a function of the total nitrogen partial pressure ratio in the Ar/N 2 plasma mixture. The films were deposited by three different deposition techniques and their microstructure was characterized using a combination of infrared and Raman spectroscopy and optical transmission experiments, completed with electrical conductivity measurements, as a function of temperature. The observed changes in the optoelectronic properties are attributed to the modification in the atomic bonding structures, which were induced by N incorporation, accompanied by an increase in the sp 2 carbon bonding configurations and their relative disorder. The electrical conductivity variation was interpreted in terms of local effects on the nature and energy distribution of π and π* states.

  17. Metal (Ag/Ti)-Containing Hydrogenated Amorphous Carbon Nanocomposite Films with Enhanced Nanoscratch Resistance: Hybrid PECVD/PVD System and Microstructural Characteristics.

    Science.gov (United States)

    Constantinou, Marios; Nikolaou, Petros; Koutsokeras, Loukas; Avgeropoulos, Apostolos; Moschovas, Dimitrios; Varotsis, Constantinos; Patsalas, Panos; Kelires, Pantelis; Constantinides, Georgios

    2018-03-30

    This study aimed to develop hydrogenated amorphous carbon thin films with embedded metallic nanoparticles (a-C:H:Me) of controlled size and concentration. Towards this end, a novel hybrid deposition system is presented that uses a combination of Plasma Enhanced Chemical Vapor Deposition (PECVD) and Physical Vapor Deposition (PVD) technologies. The a-C:H matrix was deposited through the acceleration of carbon ions generated through a radio-frequency (RF) plasma source by cracking methane, whereas metallic nanoparticles were generated and deposited using terminated gas condensation (TGC) technology. The resulting material was a hydrogenated amorphous carbon film with controlled physical properties and evenly dispersed metallic nanoparticles (here Ag or Ti). The physical, chemical, morphological and mechanical characteristics of the films were investigated through X-ray reflectivity (XRR), Raman spectroscopy, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM) and nanoscratch testing. The resulting amorphous carbon metal nanocomposite films (a-C:H:Ag and a-C:H:Ti) exhibited enhanced nanoscratch resistance (up to +50%) and low values of friction coefficient (<0.05), properties desirable for protective coatings and/or solid lubricant applications. The ability to form nanocomposite structures with tunable coating performance by potentially controlling the carbon bonding, hydrogen content, and the type/size/percent of metallic nanoparticles opens new avenues for a broad range of applications in which mechanical, physical, biological and/or combinatorial properties are required.

  18. Metal (Ag/Ti-Containing Hydrogenated Amorphous Carbon Nanocomposite Films with Enhanced Nanoscratch Resistance: Hybrid PECVD/PVD System and Microstructural Characteristics

    Directory of Open Access Journals (Sweden)

    Marios Constantinou

    2018-03-01

    Full Text Available This study aimed to develop hydrogenated amorphous carbon thin films with embedded metallic nanoparticles (a–C:H:Me of controlled size and concentration. Towards this end, a novel hybrid deposition system is presented that uses a combination of Plasma Enhanced Chemical Vapor Deposition (PECVD and Physical Vapor Deposition (PVD technologies. The a–C:H matrix was deposited through the acceleration of carbon ions generated through a radio-frequency (RF plasma source by cracking methane, whereas metallic nanoparticles were generated and deposited using terminated gas condensation (TGC technology. The resulting material was a hydrogenated amorphous carbon film with controlled physical properties and evenly dispersed metallic nanoparticles (here Ag or Ti. The physical, chemical, morphological and mechanical characteristics of the films were investigated through X-ray reflectivity (XRR, Raman spectroscopy, Scanning Electron Microscopy (SEM, Atomic Force Microscopy (AFM, Transmission Electron Microscopy (TEM and nanoscratch testing. The resulting amorphous carbon metal nanocomposite films (a–C:H:Ag and a–C:H:Ti exhibited enhanced nanoscratch resistance (up to +50% and low values of friction coefficient (<0.05, properties desirable for protective coatings and/or solid lubricant applications. The ability to form nanocomposite structures with tunable coating performance by potentially controlling the carbon bonding, hydrogen content, and the type/size/percent of metallic nanoparticles opens new avenues for a broad range of applications in which mechanical, physical, biological and/or combinatorial properties are required.

  19. Deposit of thin films of nitrided amorphous carbon using the laser ablation technique; Deposito de peliculas delgadas de carbono amorfo nitrurado utilizando la tecnica de ablacion laser

    Energy Technology Data Exchange (ETDEWEB)

    Rebollo, P.B.; Escobar A, L.; Camps C, E. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, C.P. 52045 Salazar, Estado de Mexico (Mexico); Haro P, E.; Camacho L, M.A. [Departamento de Fisica, Universidad Autonoma Metropolitana Iztapalapa (Mexico); Muhl S, S. [Instituto de Investigacion en Materiales, UNAM (Mexico)

    2000-07-01

    It is reported the synthesis and characterization of thin films of amorphous carbon (a-C) nitrided, deposited by laser ablation in a nitrogen atmosphere at pressures which are from 4.5 x 10 {sup -4} Torr until 7.5 x 10 {sup -2} Torr. The structural properties of the films are studied by Raman spectroscopy obtaining similar spectra at the reported for carbon films type diamond. The study of behavior of the energy gap and the ratio nitrogen/carbon (N/C) in the films, shows that the energy gap is reduced when the nitrogen incorporation is increased. It is showed that the refraction index of the thin films diminish as nitrogen pressure is increased, indicating the formation of graphitic material. (Author)

  20. Light emission in forward and reverse bias operation in OLED with amorphous silicon carbon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reyes, R [Facultad de Ingenieria Quimica y Textil, Universidad Nacional de Ingenieria, Av. Tupac Amaru SN, Lima (Peru); Cremona, M [Departamento de Fisica, PontifIcia Universidade Catolica de Rio de Janeiro, PUC-Rio, Cx. Postal 38071, Rio de Janeiro, RJ, CEP 22453-970 (Brazil); Achete, C A, E-mail: rreyes@uni.edu.pe [Departamento de Engenheria Metalurgica e de Materiais, Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro, RJ, CEP 21945-970 (Brazil)

    2011-01-01

    Amorphous silicon carbon nitride (a-SiC:N) thin films deposited by magnetron sputtering were used in the structure of an organic light emitting diode (OLED), obtaining an OLED operating in forward and reverse bias mode. The device consist of the heterojunction structure ITO/a-SiC:N/Hole Transport Layer (HTL)/ Electron Transport Layer (ETL)/a-SiC:N/Al. As hole transporting layer was used a thin film of 1-(3-methylphenyl)-1,2,3,4 tetrahydroquinoline - 6 - carboxyaldehyde - 1,1'- diphenylhydrazone (MTCD), while the tris(8-hydroxyquinoline aluminum) (Alq{sub 3}) is used as electron transport and emitting layer. A significant increase in the voltage operation compared to the conventional ITO/MTCD/Alq{sub 3}/Al structure was observed, so the onset of electroluminescence occurs at about 22 V in the forward and reverse bias mode of operation. The electroluminescence spectra is similar in both cases, only slightly shifted 0.14 eV to lower energies in relation to the conventional device.

  1. Study of Synchrotron Radiation Near-Edge X-Ray Absorption Fine-Structure of Amorphous Hydrogenated Carbon Films at Various Thicknesses

    Directory of Open Access Journals (Sweden)

    Sarayut Tunmee

    2015-01-01

    Full Text Available The compositions and bonding states of the amorphous hydrogenated carbon films at various thicknesses were evaluated via near-edge X-ray absorption fine-structure (NEXAFS and elastic recoil detection analysis combined with Rutherford backscattering spectrometry. The absolute carbon sp2 contents were determined to decrease to 65% from 73%, while the hydrogen contents increase from 26 to 33 at.% as the film thickness increases. In addition, as the film thickness increases, the π⁎ (C=C, σ⁎ (C–H, σ⁎ (C=C, and σ⁎ (C≡C bonding states were found to increase, whereas the π⁎ (C≡C and σ⁎ (C–C bonding states were observed to decrease in the NEXAFS spectra. Consequently, the film thickness is a key factor to evaluate the composition and bonding state of the films.

  2. Synthesis and characterization of thin films of nitrided amorphous carbon deposited by laser ablation; Sintesis y caracterizacion de peliculas delgadas de carbono amorfo nitrurado, depositadas por ablacion laser

    Energy Technology Data Exchange (ETDEWEB)

    Rebollo P, B

    2001-07-01

    The objective of this work is the synthesis and characterization of thin films of amorphous carbon (a-C) and thin films of nitrided amorphous carbon (a-C-N) using the laser ablation technique for their deposit. For this purpose, the physical properties of the obtained films were studied as function of diverse parameters of deposit such as: nitrogen pressure, power density, substrate temperature and substrate-target distance. For the characterization of the properties of the deposited thin films the following techniques were used: a) Raman spectroscopy which has demonstrated being a sensitive technique to the sp{sup 2} and sp{sup 3} bonds content, b) Energy Dispersive Spectroscopy which allows to know semi-quantitatively way the presence of the elements which make up the deposited films, c) Spectrophotometry, for obtaining the absorption spectra and subsequently the optical energy gap of the deposited material, d) Ellipsometry for determining the refraction index, e) Scanning Electron Microscopy for studying the surface morphology of thin films and, f) Profilemetry, which allows the determination the thickness of the deposited thin films. (Author)

  3. Gas barrier properties of hydrogenated amorphous carbon films coated on polyethylene terephthalate by plasma polymerization in argon/n-hexane gas mixture

    Energy Technology Data Exchange (ETDEWEB)

    Polonskyi, Oleksandr; Kylián, Ondřej, E-mail: ondrej.kylian@gmail.com; Petr, Martin; Choukourov, Andrei; Hanuš, Jan; Biederman, Hynek

    2013-07-01

    Hydrogenated amorphous carbon thin films were deposited by RF plasma polymerization in argon/n-hexane gas mixture on polyethylene terephthalate (PET) foils. It was found that such deposited films may significantly improve the barrier properties of PET. It was demonstrated that the principal parameter that influences barrier properties of such deposited films towards oxygen and water vapor is the density of the coatings. Moreover, it was shown that for achieving good barrier properties it is advantageous to deposit coatings with very low thickness. According to the presented results, optimal thickness of the coating should not be higher than several tens of nm. - Highlights: • a-C:H films were prepared by plasma polymerization in Ar/n-hexane atmosphere. • Barrier properties of coatings are dependent on their density and thickness. • Highest barrier properties were observed for films with thickness 15 nm.

  4. Resistance and magnetoresistance of annealed amorphous carbon films containing Fe3C nanograins

    International Nuclear Information System (INIS)

    Lee Yuhua; Han Taichun; Wur, C.-S.

    2004-01-01

    The temperature-dependent resistance and the field-dependent magnetoresistance were measured for films annealed at temperatures from 250 deg. C to 550 deg. C for a period of 60 min. Results of temperature-dependent resistance show electrical tunneling conductance in the films annealed at T a =250 deg. C and 350 deg. C only. The largest magnetoresistance ratio (MR) of 23% at temperature T=2 K was observed for T a =350 deg. C. The variations of both the temperature dependence of resistance and the magnetoresistance with the annealing temperature are discussed

  5. Growth and characterization of nanocrystalline diamond/amorphous carbon composite films prepared by MWCVD

    Czech Academy of Sciences Publication Activity Database

    Popov, C.; Kulisch, W.; Gibson, P. N.; Ceccone, G.; Jelínek, Miroslav

    2004-01-01

    Roč. 13, - (2004), s. 1371-1376 ISSN 0925-9635 Institutional research plan: CEZ:AV0Z1010921 Keywords : nanocrystalline * diamond films * plasma CVD * microstructure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.670, year: 2004

  6. Effect of nitrogen on tribological properties of amorphous carbon films alloyed with titanium

    Czech Academy of Sciences Publication Activity Database

    Musil, Jindřich; Hromadka, M.; Novák, P.

    2011-01-01

    Roč. 205, Jul (2011), S84-S88 ISSN 0257-8972 Institutional research plan: CEZ:AV0Z10100522 Keywords : Ti(N,C)/a-C films * mechanical properties * friction * wear * reactive magnetron sputtering Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.867, year: 2011

  7. Nanocrystalline diamond/amorphous carbon films for applications in tribology, optics and biomedicine

    Czech Academy of Sciences Publication Activity Database

    Popov, C.; Kulisch, W.; Jelínek, Miroslav; Bock, A.; Strnad, J.

    2006-01-01

    Roč. 494, - (2006), s. 92-97 ISSN 0040-6090 Grant - others:NATO(XE) CBP.EAP.CLG 981519; Marie-Curie EIF(XE) MEIF-CT-2004-500038 Institutional research plan: CEZ:AV0Z10100502 Keywords : nanocrystalline diamond films * application properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.666, year: 2006

  8. Protective amorphous carbon coatings on glass substrates

    Science.gov (United States)

    Silins, Kaspars; Baránková, Hana; Bardos, Ladislav

    2017-11-01

    Thick amorphous carbon films were deposited by the Magnets-in-Motion (M-M) rf linear hollow cathode at varying acetylene contents in Ar in a hybrid PVD/PE-CVD process directly on glass substrates. The hollow cathode plates manufactured from graphite were used as the PVD target. The measurements show that the films can reach thickness of up to 50 μm at deposition rates of up to 2.5 μm/min. Scratch test measurements confirm that well adhering films several μm thick can be achieved at C2H2 contents of up to 0.5%.

  9. Electron field emission from amorphous semiconductor thin films

    International Nuclear Information System (INIS)

    Forrest, R.D.

    2001-01-01

    The flat panel display market requires new and improved technologies in order to keep up with the requirements of modem lifestyles. Electron field emission from thin film amorphous semiconductors is potentially such a technology. For this technology to become viable, improvements in the field emitting properties of these materials must be achieved. To this end, it is important that a better understanding of the emission mechanisms responsible is attained. Amorphous carbon thin films, amorphous silicon thin films and other materials have been deposited, in-house and externally. These materials have been characterised using ellipsometry, profilometry, optical absorption, scanning electron microscopy, atomic force microscopy, electron paramagnetic resonance and Rutherford backscattering spectroscopy. An experimental system for evaluating the electron field emitting performance of thin films has been developed. In the process of developing thin film cathodes in this study, it has been possible to add a new and potentially more useful semiconductor, namely amorphous silicon, to the family of cold cathode emitters. Extensive experimental field emission data from amorphous carbon thin films, amorphous silicon thin films and other materials has been gathered. This data has been used to determine the mechanisms responsible for the observed electron emission. Preliminary computer simulations using appropriate values for the different material properties have exhibited emission mechanisms similar to those identified by experiment. (author)

  10. The effect of deposition energy of energetic atoms on the growth and structure of ultrathin amorphous carbon films studied by molecular dynamics simulations

    KAUST Repository

    Wang, N

    2014-05-16

    The growth and structure of ultrathin amorphous carbon films was investigated by molecular dynamics simulations. The second-generation reactive-empirical-bond-order potential was used to model atomic interactions. Films with different structures were simulated by varying the deposition energy of carbon atoms in the range of 1-120 eV. Intrinsic film characteristics (e.g. density and internal stress) were determined after the system reached equilibrium. Short- and intermediate-range carbon atom ordering is examined in the context of atomic hybridization and ring connectivity simulation results. It is shown that relatively high deposition energy (i.e., 80 eV) yields a multilayer film structure consisting of an intermixing layer, bulk film and surface layer, consistent with the classical subplantation model. The highest film density (3.3 g cm-3), sp3 fraction (∼43%), and intermediate-range carbon atom ordering correspond to a deposition energy of ∼80 eV, which is in good agreement with experimental findings. © 2014 IOP Publishing Ltd.

  11. Formation of carbon nanotubes on an amorphous Ni{sub 25}Ta{sub 58}N{sub 17} alloy film by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gromov, D. G.; Dubkov, S. V., E-mail: sv.dubkov@gmail.com [National Research University of Electronic Technology MIET (Russian Federation); Pavlov, A. A. [Russian Academy of Sciences, Institute of Nanotechnologies of Microelectronics (Russian Federation); Skorik, S. N. [Technological Center Research and Production Complex (Russian Federation); Trifonov, A. Yu. [Lukin Scientific Research Institute of Physical Problems (Russian Federation); Kirilenko, E. P.; Shulyat’ev, A. S. [National Research University of Electronic Technology MIET (Russian Federation); Shaman, Yu. P. [Technological Center Research and Production Complex (Russian Federation); Rygalin, B. N. [National Research University of Electronic Technology MIET (Russian Federation)

    2016-12-15

    It is shown that it is possible to grow carbon nanotubes on the surface of an amorphous Ni–Ta–N metal alloy film with a low Ni content (~25 at %) by chemical deposition from acetylene at temperature 400–800°C. It is established that the addition of nitrogen into the Ni–Ta alloy composition is favorable for the formation of tantalum nitride and the expulsion of Ni clusters, which act as a catalyst of the growth of carbon nanotubes, onto the surface. From Raman spectroscopy studies, it is found that, as the temperature of synthesis is raised, the quality of nanotubes is improved.

  12. Dielectric response and structure of amorphous hydrogenated carbon films with nitrogen admixture

    Czech Academy of Sciences Publication Activity Database

    Zajíčková, L.; Franta, D.; Nečas, D.; Bursíková, V.; Muresan, M.; Peřina, Vratislav

    2011-01-01

    Roč. 519, č. 13 (2011), s. 4299-4308 ISSN 0040-6090 R&D Projects: GA ČR GA202/07/1669 Institutional research plan: CEZ:AV0Z10480505 Keywords : DENSITY-OF-STATES * DIAMOND-LIKE CARBON * INFRARED -SPECTRA Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.890, year: 2011

  13. Sign change of magnetoresistance in Gd-doped amorphous carbon granular films.

    Science.gov (United States)

    Ding, Shihao; Jin, Chao; Fan, Ziwei; Li, Peng; Bai, Haili

    2015-11-11

    Gd/C granular films with 11% Gd were fabricated by facing-target magnetron sputtering at room temperature and then annealed at 300-650 °C for 1.5 h. A magnetoresistance of -82% was obtained in the Gd/C films annealed at 650 °C at 3 K under a magnetic field of 50 kOe. A sign change of the magnetoresistance from negative to positive and then back to negative was observed in all samples as the temperature decreases. Grain boundary scattering effects, wave-function-shrinkage, cotunneling and Gd-Gd interactions account for the mechanisms of the magnetoresistance effects in different temperature regions. The sign of the magnetoresistance also varies as the magnetic field increases. At the transition temperature of 25 K, the wave-function-shrinkage effect competes with cotunneling and Gd-Gd interactions at different magnetic fields. The competition between the wave-function-shrinkage effect and the grain boundary scattering effect is approximately at the transition temperature of 100 K. The temperature range of positive magnetoresistance expands and transition temperatures are changed as the annealing temperature increases. It is related to the expansion of the temperature region for the wave-function-shrinkage effect which occurs in the Mott variable range hopping conduction mechanism.

  14. Characterization of the bonding structure of nanocrystalline diamond and amorphous carbon films prepared by plasma assisted techniques

    Czech Academy of Sciences Publication Activity Database

    Popov, C.; Kulisch, W.; Bliznakov, S.; Mednikarov, B.; Spasov, G.; Pirov, J.; Jelínek, Miroslav; Kocourek, Tomáš; Zemek, Josef

    2007-01-01

    Roč. 89, č. 1 (2007), s. 209-212 ISSN 0947-8396 Grant - others:NATO(XE) CBP.EAP.CLG 981519; Marie-Curie EIF(XE) MEIF-CT-2004-500038 Institutional research plan: CEZ:AV0Z10100520 Keywords : nanocrystalline diamond * amorphous carbon * CVD * PLD * magnetron Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.857, year: 2007

  15. The influence of methane/argon plasma composition on the formation of the hydrogenated amorphous carbon films

    International Nuclear Information System (INIS)

    Chen, Hsin-Hung; Liao, Jiunn-Der; Weng, Chih-Chiang; Hsieh, Jui-Fu; Chang, Chia-Wei; Lin, Chao-Hsien; Cho, Ting-Pin

    2011-01-01

    The quality of the a-C:H films was particularly correlated with the mixed ratio of methane/argon plasma. For a constant supply of energy and flowing rate, the optical emission from H α intensity linearly increased with the addition of methane in argon plasma, while that from intensities of radiation of diatmoic radicals (CH*and C 2 *) exponentially decreased. For the a-C:H films, the added methane in argon plasma tended to raise the quantity of hydrogenated carbon or sp 3 C-H structure, which exponentially decreased the nano-hardness and friction coefficient of the films. In contrast, the electric resistance of the films enlarged dramatically with the increase of the methane content in argon plasma. It is therefore advantageous to balance the mechanical properties and electrical resistance of the a-C:H film by adjusting plasma composition in the course of the film-growing process.

  16. Ultrahard carbon nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    Siegal, M. P. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Tallant, D. R. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Provencio, P. N. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Overmyer, D. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Simpson, R. L. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1421 (United States); Martinez-Miranda, L. J. [Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742 (United States)

    2000-05-22

    Modest thermal annealing to 600 degree sign C of diamondlike amorphous-carbon (a-C) films grown at room temperature results in the formation of carbon nanocomposites with hardness similar to diamond. These nanocomposite films consist of nanometer-sized regions of high density a-C embedded in an a-C matrix with a reduced density of 5%-10%. We report on the evolution of density and bonding topologies as a function of annealing temperature. Despite a decrease in density, film hardness actually increases {approx}15% due to the development of the nanocomposite structure. (c) 2000 American Institute of Physics.

  17. Ultrahard carbon nanocomposite films

    Energy Technology Data Exchange (ETDEWEB)

    SIEGAL,MICHAEL P.; TALLANT,DAVID R.; PROVENCIO,PAULA P.; OVERMYER,DONALD L.; SIMPSON,REGINA L.; MARTINEZ-MIRANDA,L.J.

    2000-01-27

    Modest thermal annealing to 600 C of diamondlike amorphous-carbon (a-C) films grown at room temperature results in the formation of carbon nanocomposites with hardness similar to diamond. These nanocomposite films consist of nanometer-sized regions of high density a-C embedded in an a-C matrix with a reduced density of 5--10%. The authors report on the evolution of density and bonding topologies as a function of annealing temperature. Despite a decrease in density, film hardness actually increases {approximately} 15% due to the development of the nanocomposite structure.

  18. Heavy-ion induced desorption yields of amorphous carbon films bombarded with 4.2 MeV/u lead ions

    CERN Document Server

    Mahner, E; Küchler, D; Scrivens, R; Costa Pinto, P; Yin Vallgren, C; Bender, M

    2011-01-01

    During the past decade, intense experimental studies on the heavy-ion induced molecular desorption were performed in several particle accelerator laboratories worldwide in order to understand and overcome large dynamic pressure rises caused by lost beam ions. Different target materials and various coatings were studied for desorption and mitigation techniques were applied to heavy-ion accelerators. For the upgrade of the CERN injector complex, a coating of the Super Proton Synchrotron (SPS) vacuum system with a thin film of amorphous carbon is under study to mitigate the electron cloud effect observed during SPS operation with the nominal proton beam for the Large Hadron Collider (LHC). Since the SPS is also part of the heavy-ion injector chain for LHC, dynamic vacuum studies of amorphous carbon films are important to determine their ion induced desorption yields. At the CERN Heavy Ion Accelerator (LINAC 3), carbon-coated accelerator-type stainless steel vacuum chambers were tested for desorption using 4.2 Me...

  19. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    TECS

    flexible triple junction, amorphous silicon solar cells. At the Malaysia Energy Centre (MEC), we fabricated triple junction amorphous silicon solar cells (up to 12⋅7% efficiency (Wang et al 2002)) and laser-interconnected modules on steel, glass and polyimide substrates. A major issue encountered is the adhesion of thin film ...

  20. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    TECS

    Abstract. A major issue encountered during fabrication of triple junction a-Si solar cells on polyimide sub- strates is the adhesion of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous silicon solar cells made on different polyimide substrates (Kapton VN, Upilex-S and ...

  1. Film adhesion in amorphous silicon solar cells

    Indian Academy of Sciences (India)

    A major issue encountered during fabrication of triple junction -Si solar cells on polyimide substrates is the adhesion of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous silicon solar cells made on different polyimide substrates (Kapton VN, Upilex-S and Gouldflex), and the ...

  2. Biological characteristics of the MG-63 human osteosarcoma cells on composite tantalum carbide/amorphous carbon films.

    Directory of Open Access Journals (Sweden)

    Yin-Yu Chang

    Full Text Available Tantalum (Ta is a promising metal for biomedical implants or implant coating for orthopedic and dental applications because of its excellent corrosion resistance, fracture toughness, and biocompatibility. This study synthesizes biocompatible tantalum carbide (TaC and TaC/amorphous carbon (a-C coatings with different carbon contents by using a twin-gun magnetron sputtering system to improve their biological properties and explore potential surgical implant or device applications. The carbon content in the deposited coatings was regulated by controlling the magnetron power ratio of the pure graphite and Ta cathodes. The deposited TaC and TaC/a-C coatings exhibited better cell viability of human osteosarcoma cell line MG-63 than the uncoated Ti and Ta-coated samples. Inverted optical and confocal imaging was used to demonstrate the cell adhesion, distribution, and proliferation of each sample at different time points during the whole culture period. The results show that the TaC/a-C coating, which contained two metastable phases (TaC and a-C, was more biocompatible with MG-63 cells compared to the pure Ta coating. This suggests that the TaC/a-C coatings exhibit a better biocompatible performance for MG-63 cells, and they may improve implant osseointegration in clinics.

  3. Structure and gas-barrier properties of amorphous hydrogenated carbon films deposited on inner walls of cylindrical polyethylene terephthalate by plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Li Jing; Gong Chunzhi; Tian Xiubo; Yang Shiqin; Fu, Ricky K.Y.; Chu, Paul K.

    2009-01-01

    The influence of radio-frequency (RF) power on the structure and gas permeation through amorphous hydrogenated carbon films deposited on cylindrical polyethylene terephthalate (PET) samples is investigated. The results show that a higher radio-frequency power leads to a smaller sp 3 /sp 2 value but produces fewer defects with smaller size. The permeability of PET samples decreases significantly after a-C:H deposition and the RF only exerts a small influence. However, the coating uniformity, color, and wettability of the surface are affected by the RF power. A higher RF power results in to better uniformity and it may be attributed to the combination of the high-density plasma and sample heating.

  4. Hydrogenated amorphous carbon next deposit after heat treatment

    International Nuclear Information System (INIS)

    Salancon, E.; Durbeck, T.; Schwarz-Selinger, T.; Jacob, W.

    2006-01-01

    One of the main safety problems in the ITER tokamak project is the tritium adsorption in the reactor walls and in particular the deposits which appear after the plasma discharge. These deposits are amorphous hydrogenated carbon films, type polymer (soft a-C:H). The heating of these deposits with a pulse laser is a proposed solution for the tritium desorption. Meanwhile, Gibson and al show that in experimental conditions, products are deposed on the walls before entering the mass spectrometer. The authors present thermo-desorption spectra of different amorphous carbon films. (A.L.B.)

  5. Stages in the interaction of deuterium atoms with amorphous hydrogenated carbon films: Isotope exchange, soft-layer formation, and steady-state erosion

    Science.gov (United States)

    Oehrlein, G. S.; Schwarz-Selinger, T.; Schmid, K.; Schlüter, M.; Jacob, W.

    2010-08-01

    We report studies of the interactions of quantified deuterium (hydrogen) atom beams with hard amorphous hydrogenated carbon films at a substrate temperature of ˜330 K in an ultrahigh-vacuum chamber. The modification/erosion of a-C:H (a-C:D) films was monitored in situ by ellipsometry in real time. By interpreting the ellipsometric information and combining it with measurements of the absolute D areal density changes in the a-C:H (a-C:D) films by ion beam analysis as a function of D (H) atom fluence, we are able to distinguish three sequential stages of D interaction with hard a-C:H films. The first stage is replacement of bonded hydrogen by deuterium up to an areal density of ˜5×1015 D cm-2 to a depth of ˜1.4 nm from the surface. This phase is complete after a deuterium fluence of ≈2×1018 cm-2. The effective cross section for isotopic exchange of H with D atoms for the a-C:H layer is found to be σ =2.0×10-18 cm2, and is close to the cross section for H abstraction from a carbon surface. This may indicate that H abstraction by D from the a-C:H surface is the rate limiting step for isotope exchange in this situation. Hydrogen replacement is followed by creation of additional C-D bonds in the near-surface region and increases the D areal density by about 2.5×1015 D cm-2. By ellipsometry this process can be observed as the formation of a soft a-C:D layer on top of the hard a-C:H bulk film, with the soft layer extending about 1.4 nm from the surface. This stage is complete after a deuterium fluence of about 2×1019 cm-2. Subsequently, steady-state erosion of the a-C:H film takes place. Here, a soft a-C:D layer with roughly constant thickness (˜1.4 nm) remains on the hard a-C:H substrate and is dynamically reformed as the underlying hard a-C:H film becomes thinner. A similar sequence of processes takes place at a substrate temperature of 650 K, albeit at a much faster rate.

  6. Ta-based amorphous metal thin films

    Energy Technology Data Exchange (ETDEWEB)

    McGlone, John M., E-mail: mcglone@eecs.oregonstate.edu [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331-5501 (United States); Olsen, Kristopher R. [Department of Chemistry, Oregon State University, Corvallis, OR 97331-4003 (United States); Stickle, William F.; Abbott, James E.; Pugliese, Roberto A.; Long, Greg S. [Hewlett-Packard Company, Corvallis, OR, 97333 (United States); Keszler, Douglas A. [Department of Chemistry, Oregon State University, Corvallis, OR 97331-4003 (United States); Wager, John F. [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331-5501 (United States)

    2015-11-25

    With their lack of grains and grain boundaries, amorphous metals are known to possess advantageous mechanical properties and enhanced chemical stability relative to crystalline metals. Commonly, however, they exhibit poor high-temperature stability because of their metastable nature. Here, we describe two new Ta-based ternary metal thin films that retain thermal stability to 600 °C and above. The new thin-film compositions, Ta{sub 2}Ni{sub 2}Si{sub 1} and Ta{sub 2}Mo{sub 2}Si{sub 1}, are amorphous, exhibiting ultra-smooth surfaces (<0.4 nm) and resistivities typical of amorphous metals (224 and 177 μΩ cm, respectively). - Highlights: • New Ta-based amorphous metals were sputter deposited from individual targets. • As-deposited amorphous structure was confirmed through diffraction techniques. • Electrical and surface properties were characterized and possess smooth surfaces. • No evidence of crystallization up to 600 °C (TaNiSi) and 800 °C (TaMoSi). • Ultra-smooth surfaces remained unchanged up to crystallization temperature.

  7. Evaluation of a nitrogen-incorporated tetrahedral amorphous carbon thin film for the detection of tryptophan and tyrosine using flow injection analysis with amperometric detection.

    Science.gov (United States)

    Jarošová, Romana; Rutherford, Joy; Swain, Greg M

    2016-10-17

    We report on the analytical performance of a tetrahedral amorphous carbon (ta-C:N) thin-film electrode in flow injection analysis with amperometric detection. Two model redox analytes were used to evaluate the electrode response because of their positive detection potentials and propensity (i.e., reaction products) to adsorb and foul sp 2 carbon electrodes: tyrosine and tryptophan. ta-C:N electrodes are attractive for electroanalytical applications because they possesses many of the excellent properties of boron-doped nanocrystalline diamond (BDD) and they can be deposited at or near room temperature. The results show that the ta-C:N electrode exhibits lower background current and noise than glassy carbon (GC). The electrode was stable microstructurally at the positive potentials used for detection, ∼1.1 V, of these two amino acids and it exhibited superior analytical detection figures of merit as compared to GC and as good or superior to BDD. The linear dynamic range for both analytes at ta-C:N was from 0.1 to 100 μmol L -1 , the sensitivity was 8-12 mA L mol -1 , the short-term response variability was 1-2%, and the minimum detectable concentration was 89.7 ± 0.9 nM (18.3 μg L -1 or 0.46 ng) for tryptophan and 120 ± 11 nM (21.7 μg L -1 or 0.54 ng) for tyrosine. The analytical detection figures of merit for these amino acids at GC and BDD are also presented for comparison as is characterization data for the chemical composition and microstructure of the ta-C:N film.

  8. Large-scale and patternable graphene: direct transformation of amorphous carbon film into graphene/graphite on insulators via Cu mediation engineering and its application to all-carbon based devices.

    Science.gov (United States)

    Chen, Yu-Ze; Medina, Henry; Lin, Hung-Chiao; Tsai, Hung-Wei; Su, Teng-Yu; Chueh, Yu-Lun

    2015-02-07

    Chemical vapour deposition of graphene was the preferred way to synthesize graphene for multiple applications. However, several problems related to transfer processes, such as wrinkles, cleanness and scratches, have limited its application at the industrial scale. Intense research was triggered into developing alternative synthesis methods to directly deposit graphene on insulators at low cost with high uniformity and large area. In this work, we demonstrate a new concept to directly achieve growth of graphene on non-metal substrates. By exposing an amorphous carbon (a-C) film in Cu gaseous molecules after annealing at 850 °C, the carbon (a-C) film surprisingly undergoes a noticeable transformation to crystalline graphene. Furthermore, the thickness of graphene could be controlled, depending on the thickness of the pre-deposited a-C film. The transformation mechanism was investigated and explained in detail. This approach enables development of a one-step process to fabricate electrical devices made of all carbon material, highlighting the uniqueness of the novel approach for developing graphene electronic devices. Interestingly, the carbon electrodes made directly on the graphene layer by our approach offer a good ohmic contact compared with the Schottky barriers usually observed on graphene devices using metals as electrodes.

  9. Amorphous microcellular polytetrafluoroethylene foam film

    Science.gov (United States)

    Tang, Chongzheng

    1991-11-01

    We report herein the preparation of novel low-density ultramicrocellular fluorocarbon foams and their application. These fluorocarbon foams are of interest for the biochemistry arena in numerous applications including foodstuff, pharmacy, wine making, beer brewery, fermentation medical laboratory, and other processing factories. All of those require good quality processing programs in which, after eliminating bacterium and virus, compressed air is needed. Ordinarily, compressed air contains bacterium and virus, its size is 0.01 - 2 micrometers fluorocarbon foam films. Having average porous diameter 0.04 - 0.1 micrometers , these are stable to high temperature (280 degree(s)C) and chemical environments, and generally have good engineering and mechanical properties (e.g., low coefficient of thermal expansion, high modulus, and good dimensional stability). Our new process for preparing low density fluorocarbon foams provides materials with unique properties. As such, they offer the possibility for being superior to earlier materials for a number of the filter applications mentioned.

  10. Amorphous Carbon-Boron Nitride Nanotube Hybrids

    Science.gov (United States)

    Kim, Jae Woo (Inventor); Siochi, Emilie J. (Inventor); Wise, Kristopher E. (Inventor); Lin, Yi (Inventor); Connell, John (Inventor)

    2016-01-01

    A method for joining or repairing boron nitride nanotubes (BNNTs). In joining BNNTs, the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures. In repairing BNNTs, the damaged site of the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures at the damage site.

  11. Revealing the 1 nm/s Extensibility of Nanoscale Amorphous Carbon in a Scanning Electron Microscope

    DEFF Research Database (Denmark)

    Zhang, Wei

    2013-01-01

    In an ultra-high vacuum scanning electron microscope, the edged branches of amorphous carbon film (∼10 nm thickness) can be continuously extended with an eye-identifying speed (on the order of ∼1 nm/s) under electron beam. Such unusual mobility of amorphous carbon may be associated with deformation...

  12. Thermal expansion coefficient measurement from electron diffraction of amorphous films in a TEM.

    Science.gov (United States)

    Hayashida, Misa; Cui, Kai; Malac, Marek; Egerton, Ray

    2018-05-01

    We measured the linear thermal expansion coefficients of amorphous 5-30 nm thick SiN and 17 nm thick Formvar/Carbon (F/C) films using electron diffraction in a transmission electron microscope. Positive thermal expansion coefficient (TEC) was observed in SiN but negative coefficients in the F/C films. In case of amorphous carbon (aC) films, we could not measure TEC because the diffraction radii required several hours to stabilize at a fixed temperature. Crown Copyright © 2018. Published by Elsevier B.V. All rights reserved.

  13. Short pulse laser-induced optical damage and fracto-emission of amorphous, diamond-like carbon

    Energy Technology Data Exchange (ETDEWEB)

    SOKOLOWSKI-TINTEN,K.; VON DER LINDE,D.; SIEGAL,MICHAEL P.; OVERMYER,DONALD L.

    2000-02-07

    Short pulse laser damage and ablation of amorphous, diamond-like carbon films is investigated. Material removal is due to fracture of the film and ejection of large fragments, which exhibit a broadband emission of microsecond duration.

  14. Phase transitions in biogenic amorphous calcium carbonate.

    Science.gov (United States)

    Gong, Yutao U T; Killian, Christopher E; Olson, Ian C; Appathurai, Narayana P; Amasino, Audra L; Martin, Michael C; Holt, Liam J; Wilt, Fred H; Gilbert, P U P A

    2012-04-17

    Crystalline biominerals do not resemble faceted crystals. Current explanations for this property involve formation via amorphous phases. Using X-ray absorption near-edge structure (XANES) spectroscopy and photoelectron emission microscopy (PEEM), here we examine forming spicules in embryos of Strongylocentrotus purpuratus sea urchins, and observe a sequence of three mineral phases: hydrated amorphous calcium carbonate (ACC · H(2)O) → dehydrated amorphous calcium carbonate (ACC) → calcite. Unexpectedly, we find ACC · H(2)O-rich nanoparticles that persist after the surrounding mineral has dehydrated and crystallized. Protein matrix components occluded within the mineral must inhibit ACC · H(2)O dehydration. We devised an in vitro, also using XANES-PEEM, assay to identify spicule proteins that may play a role in stabilizing various mineral phases, and found that the most abundant occluded matrix protein in the sea urchin spicules, SM50, stabilizes ACC · H(2)O in vitro.

  15. Charge ordering in amorphous WOx films

    International Nuclear Information System (INIS)

    Kopelevich, Yakov; Silva, Robson R. da; Rougier, Aline; Luk'yanchuk, Igor A.

    2008-01-01

    We observed highly anisotropic viscous electronic conducting phase in amorphous WO 1.55 films that occurs below a current (I)- and frequency (f)-dependent temperature T*(I, f). At T< T*(I, f) the rotational symmetry of randomly disordered electronic background is broken leading to the appearance of mutually perpendicular metallic- and insulating-like states. A rich dynamic behavior of the electronic matter occurring at T< T*(I, f) provides evidence for an interplay between pinning effects and electron-electron interactions. The results suggest a dynamic crystallization of the disordered electronic matter, viz. formation of sliding Wigner crystal, as well as the occurrence of quantum liquid-like crystal or stripe phase at low drives

  16. Graphitic carbon growth on crystalline and amorphous oxide substrates using molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Kim Christine

    2011-01-01

    Full Text Available Abstract We report graphitic carbon growth on crystalline and amorphous oxide substrates by using carbon molecular beam epitaxy. The films are characterized by Raman spectroscopy and X-ray photoelectron spectroscopy. The formations of nanocrystalline graphite are observed on silicon dioxide and glass, while mainly sp2 amorphous carbons are formed on strontium titanate and yttria-stabilized zirconia. Interestingly, flat carbon layers with high degree of graphitization are formed even on amorphous oxides. Our results provide a progress toward direct graphene growth on oxide materials. PACS: 81.05.uf; 81.15.Hi; 78.30.Ly.

  17. Research Update: Direct conversion of amorphous carbon into diamond at ambient pressures and temperatures in air

    International Nuclear Information System (INIS)

    Narayan, Jagdish; Bhaumik, Anagh

    2015-01-01

    We report on fundamental discovery of conversion of amorphous carbon into diamond by irradiating amorphous carbon films with nanosecond lasers at room-temperature in air at atmospheric pressure. We can create diamond in the form of nanodiamond (size range <100 nm) and microdiamond (>100 nm). Nanosecond laser pulses are used to melt amorphous diamondlike carbon and create a highly undercooled state, from which various forms of diamond can be formed upon cooling. The quenching from the super undercooled state results in nucleation of nanodiamond. It is found that microdiamonds grow out of highly undercooled state of carbon, with nanodiamond acting as seed crystals

  18. Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices

    OpenAIRE

    Schriver, Maria Christine

    2012-01-01

    A novel solar cell architecture made completely from the earth abundant elements silicon and carbon has been developed. Hydrogenated amorphous silicon (aSi:H), rather than crystalline silicon, is used as the active material due to its high absorption through a direct band gap of 1.7eV, well matched to the solar spectrum to ensure the possibility of improved cells in this architecture with higher efficiencies. The cells employ a Schottky barrier design wherein the amorphous silicon absorber la...

  19. The Electronic Structure of Amorphous Carbon Nanodots.

    Science.gov (United States)

    Margraf, Johannes T; Strauss, Volker; Guldi, Dirk M; Clark, Timothy

    2015-06-18

    We have studied hydrogen-passivated amorphous carbon nanostructures with semiempirical molecular orbital theory in order to provide an understanding of the factors that affect their electronic properties. Amorphous structures were first constructed using periodic calculations in a melt/quench protocol. Pure periodic amorphous carbon structures and their counterparts doped with nitrogen and/or oxygen feature large electronic band gaps. Surprisingly, descriptors such as the elemental composition and the number of sp(3)-atoms only influence the electronic structure weakly. Instead, the exact topology of the sp(2)-network in terms of effective conjugation defines the band gap. Amorphous carbon nanodots of different structures and sizes were cut out of the periodic structures. Our calculations predict the occurrence of localized electronic surface states, which give rise to interesting effects such as amphoteric reactivity and predicted optical band gaps in the near-UV/visible range. Optical and electronic gaps display a dependence on particle size similar to that of inorganic colloidal quantum dots.

  20. Radiation damage to amorphous carbon thin films irradiated by multiple 46.9 nm laser shots below the single-shot damage threshold

    Czech Academy of Sciences Publication Activity Database

    Juha, Libor; Hájková, Věra; Chalupský, Jaromír; Vorlíček, Vladimír; Ritucci, A.; Reale, A.; Zuppella, P.; Störmer, M.

    2009-01-01

    Roč. 105, č. 9 (2009), 093117/1-093117/3 ISSN 0021-8979 R&D Projects: GA AV ČR KAN300100702; GA MŠk LC510; GA MŠk(CZ) LC528; GA MŠk LA08024; GA AV ČR IAA400100701 Institutional research plan: CEZ:AV0Z10100523 Keywords : single-shot damage threshold * multiple-shot exposure damage * amorphous carbon * radiation erosion * capillary-discharge XUV laser Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.072, year: 2009

  1. Amorphous silicon films doped with BF3 and PF5

    International Nuclear Information System (INIS)

    Ortiz, A.; Muhl, S.; Sanchez, A.; Monroy, R.; Pickin, W.

    1984-01-01

    By using gaseous discharge process, thin films of hydrogenated amorphous silicon (a-Si:H) were produced. This process consists of Silane (SiH 4 ) decomposition at low pressure, in a chamber. (A.C.A.S.) [pt

  2. Growth Mechanism for Low Temperature PVD Graphene Synthesis on Copper Using Amorphous Carbon

    Science.gov (United States)

    Narula, Udit; Tan, Cher Ming; Lai, Chao Sung

    2017-03-01

    Growth mechanism for synthesizing PVD based Graphene using Amorphous Carbon, catalyzed by Copper is investigated in this work. Different experiments with respect to Amorphous Carbon film thickness, annealing time and temperature are performed for the investigation. Copper film stress and its effect on hydrogen diffusion through the film grain boundaries are found to be the key factors for the growth mechanism, and supported by our Finite Element Modeling. Low temperature growth of Graphene is achieved and the proposed growth mechanism is found to remain valid at low temperatures.

  3. Thin films of hydrogenated amorphous carbon (a-C:H) obtained through chemical vapor deposition assisted by plasma; Peliculas delgadas de carbono amorfo hidrogenado (a-C:H) obtenidas mediante deposito quimico de vapores asistido por plasma

    Energy Technology Data Exchange (ETDEWEB)

    Mejia H, J.A.; Camps C, E.E.; Escobar A, L.; Romero H, S.; Chirino O, S. [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico); Muhl S, S. [IIM-UNAM, 04510 Mexico D.F. (Mexico)

    2004-07-01

    Films of hydrogenated amorphous carbon (a-C:H) were deposited using one source of microwave plasma with magnetic field (type ECR), using mixtures of H{sub 2}/CH{sub 4} in relationship of 80/20 and 95/05 as precursory gases, with work pressures of 4X10{sup -4} to 6x10{sup -4} Torr and an incident power of the discharge of microwaves with a constant value of 400 W. It was analyzed the influence among the properties of the films, as the deposit rate, the composition and the bonding types, and the deposit conditions, such as the flow rates of the precursory gases and the polarization voltage of the sample holders. (Author)

  4. Recent progress in the synthesis and characterization of amorphous and crystalline carbon nitride coatings

    CERN Document Server

    Widlow, I

    2000-01-01

    This review summarizes our most recent findings in the structure and properties of amorphous and crystalline carbon nitride coatings, synthesized by reactive magnetron sputtering. By careful control of the plasma conditions via proper choice of process parameters such as substrate bias, target power and gas pressure, one can precisely control film structure and properties. With this approach, we were able to produce amorphous carbon nitride films with controlled hardness and surface roughness. In particular, we can synthesize ultrathin (1 nm thick) amorphous carbon nitride films to be sufficiently dense and uniform that they provide adequate corrosion protection for hard disk applications. We demonstrated the strong correlation between ZrN (111) texture and hardness in CN sub x /ZrN superlattice coatings. Raman spectroscopy and near-edge X-ray absorption show the predominance of sp sup 3 -bonded carbon in these superlattice coatings.

  5. Amorphous calcium carbonate particles form coral skeletons

    Science.gov (United States)

    Mass, Tali; Giuffre, Anthony J.; Sun, Chang-Yu; Stifler, Cayla A.; Frazier, Matthew J.; Neder, Maayan; Tamura, Nobumichi; Stan, Camelia V.; Marcus, Matthew A.; Gilbert, Pupa U. P. A.

    2017-09-01

    Do corals form their skeletons by precipitation from solution or by attachment of amorphous precursor particles as observed in other minerals and biominerals? The classical model assumes precipitation in contrast with observed “vital effects,” that is, deviations from elemental and isotopic compositions at thermodynamic equilibrium. Here, we show direct spectromicroscopy evidence in Stylophora pistillata corals that two amorphous precursors exist, one hydrated and one anhydrous amorphous calcium carbonate (ACC); that these are formed in the tissue as 400-nm particles; and that they attach to the surface of coral skeletons, remain amorphous for hours, and finally, crystallize into aragonite (CaCO3). We show in both coral and synthetic aragonite spherulites that crystal growth by attachment of ACC particles is more than 100 times faster than ion-by-ion growth from solution. Fast growth provides a distinct physiological advantage to corals in the rigors of the reef, a crowded and fiercely competitive ecosystem. Corals are affected by warming-induced bleaching and postmortem dissolution, but the finding here that ACC particles are formed inside tissue may make coral skeleton formation less susceptible to ocean acidification than previously assumed. If this is how other corals form their skeletons, perhaps this is how a few corals survived past CO2 increases, such as the Paleocene-Eocene Thermal Maximum that occurred 56 Mya.

  6. Memristive effects in oxygenated amorphous carbon nanodevices

    Science.gov (United States)

    Bachmann, T. A.; Koelmans, W. W.; Jonnalagadda, V. P.; Le Gallo, M.; Santini, C. A.; Sebastian, A.; Eleftheriou, E.; Craciun, M. F.; Wright, C. D.

    2018-01-01

    Computing with resistive-switching (memristive) memory devices has shown much recent progress and offers an attractive route to circumvent the von-Neumann bottleneck, i.e. the separation of processing and memory, which limits the performance of conventional computer architectures. Due to their good scalability and nanosecond switching speeds, carbon-based resistive-switching memory devices could play an important role in this respect. However, devices based on elemental carbon, such as tetrahedral amorphous carbon or ta-C, typically suffer from a low cycling endurance. A material that has proven to be capable of combining the advantages of elemental carbon-based memories with simple fabrication methods and good endurance performance for binary memory applications is oxygenated amorphous carbon, or a-CO x . Here, we examine the memristive capabilities of nanoscale a-CO x devices, in particular their ability to provide the multilevel and accumulation properties that underpin computing type applications. We show the successful operation of nanoscale a-CO x memory cells for both the storage of multilevel states (here 3-level) and for the provision of an arithmetic accumulator. We implement a base-16, or hexadecimal, accumulator and show how such a device can carry out hexadecimal arithmetic and simultaneously store the computed result in the self-same a-CO x cell, all using fast (sub-10 ns) and low-energy (sub-pJ) input pulses.

  7. Molecular simulation of freestanding amorphous nickel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

    2013-10-31

    Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

  8. Protolytic carbon film technology

    Energy Technology Data Exchange (ETDEWEB)

    Renschler, C.L.; White, C.A.

    1996-04-01

    This paper presents a technique for the deposition of polyacrylonitrile (PAN) on virtually any surface allowing carbon film formation with only the caveat that the substrate must withstand carbonization temperatures of at least 600 degrees centigrade. The influence of processing conditions upon the structure and properties of the carbonized film is discussed. Electrical conductivity, microstructure, and morphology control are also described.

  9. Revealing the 1 nm/s extensibility of nanoscale amorphous carbon in a scanning electron microscope.

    Science.gov (United States)

    Zhang, Wei

    2013-01-01

    In an ultra-high vacuum scanning electron microscope, the edged branches of amorphous carbon film (∼10 nm thickness) can be continuously extended with an eye-identifying speed (on the order of ∼1 nm/s) under electron beam. Such unusual mobility of amorphous carbon may be associated with deformation promoted by the electric field, which resulted from an inner secondary electron potential difference from the main trunk of carbon film to the tip end of branches under electron beam. This result demonstrates importance of applying electrical effects to modify properties of carbon materials. It may have positive implications to explore some amorphous carbon as electron field emission device. © Wiley Periodicals, Inc.

  10. The production of UV Absorber amorphous cerium sulfide thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kariper, İshak Afşin, E-mail: akariper@gmail.com [Faculty of Education, Erciyes University, Kayseri (Turkey)

    2017-10-15

    This study investigates the production of cerium sulfide (CeSx) amorphous thin films on substrates (commercial glass) by chemical bath deposition at different pH levels. The transmittance, absorption, optical band gap and refractive index of the films are measured by UV/VIS Spectrum. According to XRD analysis, the films show amorphous structure in the baths with pH: 1 to 5. It has been observed that the optical and structural properties of the films depend on pH value of the bath. The optical band gap (2.08 eV to 3.16 eV) of the films changes with the film thickness (23 nm to 1144 nm). We show that the refractive index has a positive relationship with the film thickness, where the values of 1.93, 1.45, 1.42, 2.60 and 1.39 are obtained for the former, and 34, 560, 509, 23 and 1144 nm (at 550 nm wavelength) for the latter. We compare the optical properties of amorphous and crystal form of CeSx thin films. We show that the optical band gaps of the amorphous CeS{sub x} are lower than that of crystal CeS{sub x} . (author)

  11. Extracting Crystal Chemistry from Amorphous Carbon Structures.

    Science.gov (United States)

    Deringer, Volker L; Csányi, Gábor; Proserpio, Davide M

    2017-04-19

    Carbon allotropes have been explored intensively by ab initio crystal structure prediction, but such methods are limited by the large computational cost of the underlying density functional theory (DFT). Here we show that a novel class of machine-learning-based interatomic potentials can be used for random structure searching and readily predicts several hitherto unknown carbon allotropes. Remarkably, our model draws structural information from liquid and amorphous carbon exclusively, and so does not have any prior knowledge of crystalline phases: it therefore demonstrates true transferability, which is a crucial prerequisite for applications in chemistry. The method is orders of magnitude faster than DFT and can, in principle, be coupled with any algorithm for structure prediction. Machine-learning models therefore seem promising to enable large-scale structure searches in the future. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Carbon thin film thermometry

    Science.gov (United States)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  13. Amorphous tin-cadmium oxide films and the production thereof

    Science.gov (United States)

    Li, Xiaonan; Gessert, Timothy A

    2013-10-29

    A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1.times.10.sup.20 cm.sup.-3 and 2.times.10.sup.20 cm.sup.-3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm.sup.2V.sup.-1 s.sup.-1 and 60 cm.sup.2V.sup.-1 s.sup.-1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

  14. Elastic properties of amorphous thin films studied by Rayleigh waves

    International Nuclear Information System (INIS)

    Schwarz, R.B.; Rubin, J.B.

    1993-01-01

    Physical vapor deposition in ultra-high vacuum was used to co-deposit nickel and zirconium onto quartz single crystals and grow amorphous Ni 1-x Zr x (0.1 < x < 0.87) thin film. A high-resolution surface acoustic wave technique was developed for in situ measurement of film shear moduli. The modulus has narrow maxima at x = 0. 17, 0.22, 0.43, 0.5, 0.63, and 0.72, reflecting short-range ordering and formation of aggregates in amorphous phase. It is proposed that the aggregates correspond to polytetrahedral atom arrangements limited in size by geometrical frustration

  15. NMR STUDIES OF Co-BASED NITRIDE AMORPHOUS FILMS

    OpenAIRE

    Le Dang, K.; Veillet, P.; Sakakima, H.; Krishnan, R.

    1988-01-01

    We have carried out at 4 K spin-echo measurements in both single and multilayer (nitride and nonnitride layers) amorphous films of (Co83Nb11Ta2Zr4)1-x N100x. The average Co hyperfine field and the local in-plane anisotropy (K) increase with N (x) content in agreement with magnetization measurements. Annealing leads to a slight increase in K for single layer but a strong decrease for multilayer which remains amorphous contrary to the non-nitride films.

  16. Structure-property relations in amorphous carbon for photovoltaics

    International Nuclear Information System (INIS)

    Risplendi, Francesca; Cicero, Giancarlo; Bernardi, Marco; Grossman, Jeffrey C.

    2014-01-01

    Carbon is emerging as a material with great potential for photovoltaics (PV). However, the amorphous form (a-C) has not been studied in detail as a PV material, even though it holds similarities with amorphous Silicon (a-Si) that is widely employed in efficient solar cells. In this work, we correlate the structure, bonding, stoichiometry, and hydrogen content of a-C with properties linked to PV performance such as the electronic structure and optical absorption. We employ first-principles molecular dynamics and density functional theory calculations to generate and analyze a set of a-C structures with a range of densities and hydrogen concentrations. We demonstrate that optical and electronic properties of interest in PV can be widely tuned by varying the density and hydrogen content. For example, sunlight absorption in a-C films can significantly exceed that of a same thickness of a-Si for a range of densities and H contents in a-C. Our results highlight promising features of a-C as the active layer material of thin-film solar cells.

  17. Crystallization kinetics of amorphous aluminum-tungsten thin films

    Energy Technology Data Exchange (ETDEWEB)

    Car, T.; Radic, N. [Rugjer Boskovic Inst., Zagreb (Croatia). Div. of Mater. Sci.; Ivkov, J. [Institute of Physics, Bijenicka 46, P.O.B. 304, HR-10000 Zagreb (Croatia); Babic, E.; Tonejc, A. [Faculty of Sciences, Physics Department, Bijenicka 32, P.O.B. 162, HR-10000 Zagreb (Croatia)

    1999-01-01

    Crystallization kinetics of the amorphous Al-W thin films under non-isothermal conditions was examined by continuous in situ electrical resistance measurements in vacuum. The estimated crystallization temperature of amorphous films in the composition series of the Al{sub 82}W{sub 18} to Al{sub 62}W{sub 38} compounds ranged from 800 K to 920 K. The activation energy for the crystallization and the Avrami exponent were determined. The results indicated that the crystallization mechanism in films with higher tungsten content was a diffusion-controlled process, whereas in films with the composition similar to the stoichiometric compound (Al{sub 4}W), the interface-controlled crystallization probably occurred. (orig.) With 4 figs., 1 tab., 26 refs.

  18. Neon ion beam induced pattern formation on amorphous carbon surfaces

    Directory of Open Access Journals (Sweden)

    Omar Bobes

    2018-02-01

    Full Text Available We investigate the ripple pattern formation on amorphous carbon surfaces at room temperature during low energy Ne ion irradiation as a function of the ion incidence angle. Monte Carlo simulations of the curvature coefficients applied to the Bradley-Harper and Cater-Vishnyakov models, including the recent extensions by Harrison-Bradley and Hofsäss predict that pattern formation on amorphous carbon thin films should be possible for low energy Ne ions from 250 eV up to 1500 eV. Moreover, simulations are able to explain the absence of pattern formation in certain cases. Our experimental results are compared with prediction using current linear theoretical models and applying the crater function formalism, as well as Monte Carlo simulations to calculate curvature coefficients using the SDTrimSP program. Calculations indicate that no patterns should be generated up to 45° incidence angle if the dynamic behavior of the thickness of the ion irradiated layer introduced by Hofsäss is taken into account, while pattern formation most pronounced from 50° for ion energy between 250 eV and 1500 eV, which are in good agreement with our experimental data.

  19. In vitro cytocompatibility assessment of amorphous carbon structures using neuroblastoma and Schwann cells.

    Science.gov (United States)

    Jain, Shilpee; Sharma, Ashutosh; Basu, Bikramjit

    2013-05-01

    The development of scaffolds for neural tissue engineering application requires an understanding of cell adhesion, proliferation, and migration of neuronal cells. Considering the potential application of carbon as scaffold materials and the lack of understanding of compatibility of amorphous carbon with neuronal cells, the carbon-based materials in the forms of carbon films and continuous electrospun carbon nanofibers having average diameter of ~200 nm are being investigated with or without ultraviolet (UV) and oxy-plasma (OP) treatments for cytocompatibility property using mouse Neuroblastoma (N2a) and rat Schwann cells (RT4-D6P2T). The use of Raman spectroscopy in combination with Fourier transform infrared (FTIR) and X-ray diffraction establishes the amorphous nature and surface-bonding characteristics of the studied carbon materials. Although both UV and OP treatments make carbon surfaces more hydrophilic, the cell viability of N2a cells is statistically more significant on OP treated fibers/films compared to UV fiber/film substrates after 4 days in culture. The electrospun carbon fibrous substrate provides the physical guidance to the cultured Schwann cells. Overall, the experimental results of this study demonstrate that the electrospun amorphous carbon nanofibrous scaffolds can be used as a suitable biomaterial substrate for supporting cell adhesion and proliferation of neuronal cells in the context of their applications as artificial nerve implants. Copyright © 2013 Wiley Periodicals, Inc.

  20. Kerr-effect enhancement in amorphous GdFe films

    International Nuclear Information System (INIS)

    Urner-Wille, M.; Velde, T.S. te; Engen, P.G. van

    1978-01-01

    Experimental investigations of amorphous ferrimagnetic GdFe films with CeO 2 coatings of various thicknesses have been performed. It could be shown that in general an increase in Kerr rotation was accompanied by a decrease in reflectionity by the CeO 2 coatings. The results indicate an enhancement of the magneto-optic Kerr effects

  1. Photoelectron yield spectroscopy and inverse photoemission spectroscopy evaluations of p-type amorphous silicon carbide films prepared using liquid materials

    Energy Technology Data Exchange (ETDEWEB)

    Murakami, Tatsuya, E-mail: mtatsuya@jaist.ac.jp, E-mail: mtakashi@jaist.ac.jp [Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Masuda, Takashi, E-mail: mtatsuya@jaist.ac.jp, E-mail: mtakashi@jaist.ac.jp; Inoue, Satoshi; Shimoda, Tatsuya [Green Device Research Center, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1211 (Japan); Yano, Hiroshi; Iwamuro, Noriyuki [Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennoudai, Tsukuba, Ibaraki 305-8573 (Japan)

    2016-05-15

    Phosphorus-doped amorphous silicon carbide films were prepared using a polymeric precursor solution. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross-linkage, providing semiconducting properties in the films. The valence and conduction states of resultant films were determined directly through the combination of inverse photoemission spectroscopy and photoelectron yield spectroscopy. The incorporated carbon widened energy gap and optical gap comparably in the films with lower carbon concentrations. In contrast, a large deviation between the energy gap and the optical gap was observed at higher carbon contents because of exponential widening of the band tail.

  2. Resistance switching at the nanometre scale in amorphous carbon

    International Nuclear Information System (INIS)

    Sebastian, Abu; Rossel, Christophe; Pozidis, Haralampos; Eleftheriou, Evangelos; Pauza, Andrew; Shelby, Robert M; RodrIguez, Arantxa Fraile

    2011-01-01

    The electrical transport and resistance switching mechanism in amorphous carbon (a-C) is investigated at the nanoscale. The electrical conduction in a-C thin films is shown to be captured well by a Poole-Frenkel transport model that involves nonisolated traps. Moreover, at high electric fields a field-induced threshold switching phenomenon is observed. The following resistance change is attributed to Joule heating and subsequent localized thermal annealing. We demonstrate that the mechanism is mostly due to clustering of the existing sp 2 sites within the sp 3 matrix. The electrical conduction behaviour, field-induced switching and Joule-heating-induced rearrangement of atomic order resulting in a resistance change are all reminiscent of conventional phase-change memory materials. This suggests the potential of a-C as a similar nonvolatile memory candidate material.

  3. Statistical properties of Barkhausen noise in amorphous ferromagnetic films.

    Science.gov (United States)

    Bohn, F; Corrêa, M A; Carara, M; Papanikolaou, S; Durin, G; Sommer, R L

    2014-09-01

    We investigate the statistical properties of the Barkhausen noise in amorphous ferromagnetic films with thicknesses in the range between 100 and 1000 nm. From Barkhausen noise time series measured with the traditional inductive technique, we perform a wide statistical analysis and establish the scaling exponents τ,α,1/σνz, and ϑ. We also focus on the average shape of the avalanches, which gives further indications on the domain-wall dynamics. Based on experimental results, we group the amorphous films in a single universality class, characterized by scaling exponents τ=1.28±0.02,α=1.52±0.3, and 1/σνz=ϑ=1.83±0.03, values compatible with that obtained for several bulk amorphous magnetic materials. Besides, we verify that the avalanche shape depends on the universality class. By considering the theoretical models for the dynamics of a ferromagnetic domain wall driven by an external magnetic field through a disordered medium found in literature, we interpret the results and identify an experimental evidence that these amorphous films, within this thickness range, present a typical three-dimensional magnetic behavior with predominant short-range elastic interactions governing the domain-wall dynamics. Moreover, we provide experimental support for the validity of a general scaling form for the average avalanche shape for non-mean-field systems.

  4. Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

    International Nuclear Information System (INIS)

    Galeano-Osorio, D.S.; Vargas, S.; Lopez-Cordoba, L.M.; Ospina, R.; Restrepo-Parra, E.; Arango, P.J.

    2010-01-01

    Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (T room ), 100 deg. C, 150 deg. C and 200 deg. C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 deg. C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 ± 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the I D /I G or sp 3 /sp 2 ratio and not by the absolute sp 3 or sp 2 concentration.

  5. Substrate temperature influence on the trombogenicity in amorphous carbon nitride thin coatings

    Energy Technology Data Exchange (ETDEWEB)

    Galeano-Osorio, D.S.; Vargas, S.; Lopez-Cordoba, L.M.; Ospina, R. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia); Arango, P.J. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Km. 9 via al Magdalena, Manizales (Colombia)

    2010-10-01

    Carbon nitride thin films were obtained through plasma assisted physical vapor deposition technique by pulsed arc, varying the substrate temperature and investigating the influence of this parameter on the films hemocompatibility. For obtaining approaches of blood compatibility, environmental scanning electron microscopy (ESEM) was used in order to study the platelets adherence and their morphology. Moreover, the elemental chemical composition was determined by using energy dispersive spectroscopy (EDS), finding C, N and O. The coatings hemocompatibility was evaluated by in vitro thrombogenicity test, whose results were correlated with the microstructure and roughness of the films obtained. During the films growth process, the substrate temperature was varied, obtaining coatings under different temperatures, room temperature (T{sub room}), 100 deg. C, 150 deg. C and 200 deg. C. Parameters as interelectrodic distance, voltage, work pressure and number of discharges, were remained constant. By EDS, carbon and nitrogen were found in the films. Visible Raman spectroscopy was used, and it revealed an amorphous lattice, with graphitic process as the substrate temperature was increased. However, at a critical temperature of 150 deg. C, this tendency was broken, and the film became more amorphous. This film showed the lowest roughness, 2 {+-} 1 nm. This last characteristic favored the films hemocompatibility. Also, it was demonstrated that the blood compatibility of carbon nitride films obtained were affected by the I{sub D}/I{sub G} or sp{sup 3}/sp{sup 2} ratio and not by the absolute sp{sup 3} or sp{sup 2} concentration.

  6. Novel low Wigner energy amorphous carbon-carbon composite

    Science.gov (United States)

    Dasgupta, Kinshuk; Prakash, Jyoti; Tripathi, B. M.

    2014-02-01

    A novel amorphous carbon-carbon composite has been developed using carbon black dispersed in carbonized phenolic resin matrix in order to avoid Wigner energy problem associated with graphite. The as prepared sample showed a density of 1320 kg m-3. This has been further densified by resin impregnation and chemical vapour infiltration. The effect of processing parameters on final density (1517 kg m-3) has been investigated. This composite possesses the compressive strength of 65 Mpa, coefficient of thermal expansion of 3 × 10-6 K-1 and the specific heat of 1.2 J g-1 K-1. This novel composite was subjected to 145 MeV Ne+6 heavy ion irradiation at different doses. The highest dose was kept at 3 × 10-4 dpa. The stored energy in the composite was found to be 212 J g-1 at the highest dose of irradiation, which is much below than that of graphite. The composite remained amorphous after irradiation as confirmed by X-ray diffraction.

  7. Designed synthesis of tunable amorphous carbon nanotubes (a ...

    Indian Academy of Sciences (India)

    Administrator

    Page 1. Electronic Supplementary Material. Graphical abstract. Designed synthesis of tunable amorphous carbon nanotubes (a-CNTs) by a novel route and their oxidation resistance properties by Longlong. Xu et al (pp 1397–1402).

  8. Amorphous Dielectric Thin Films with Extremely Low Mechanical Loss

    Directory of Open Access Journals (Sweden)

    Liu X.

    2015-04-01

    Full Text Available The ubiquitous low-energy excitations are one of the universal phenomena of amorphous solids. These excitations dominate the acoustic, dielectric, and thermal properties of structurally disordered solids. One exception has been a type of hydrogenated amorphous silicon (a-Si:H with 1 at.% H. Using low temperature elastic and thermal measurements of electron-beam evap-orated amorphous silicon (a-Si, we show that TLS can be eliminated in this system as the films become denser and more structurally ordered under certain deposition conditions. Our results demonstrate that TLS are not intrinsic to the glassy state but instead reside in low density regions of the amorphous network. This work obviates the role hydrogen was previously thought to play in removing TLS in a-Si:H and favors an ideal four-fold covalently bonded amorphous structure as the cause for the disappearance of TLS. Our result supports the notion that a-Si can be made a “perfect glass” with “crystal-like” properties, thus offering an encouraging opportunity to use it as a simple crystal dielectric alternative in applications, such as in modern quantum devices where TLS are the source of dissipation, decoherence and 1/f noise.

  9. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  10. Unipolar resistive switching behaviors in amorphous lutetium oxide films

    Science.gov (United States)

    Gao, Xu; Xia, Yidong; Xu, Bo; Kong, Jizhou; Guo, Hongxuan; Li, Kui; Li, Haitao; Xu, Hanni; Chen, Kai; Yin, Jiang; Liu, Zhiguo

    2010-10-01

    The resistive switching properties in the amorphous Lu2O3 films deposited by pulsed laser deposition have been investigated. Well unipolar switching behaviors of Pt/Lu2O3/Pt stacks were obtained. The memory cells exhibited a high resistance ratio over 1×103, fast programming speed within 30 ns, and no obvious degradation after an endurance of 300 switching cycles and a duration of 3.2×106 s. The first-principles calculation indicates that the oxygen vacancies in cubic Lu2O3 will form defective energy level below the bottom of conduction band, and reduce the band gap. The absence of grain boundaries in the amorphous Lu2O3 films helps us attribute the switching mechanism of such stacks to the possible redistribution of defects related to oxygen vacancies along the filamentary paths during the resistive switching process.

  11. Photodecomposition of Hg - Photo - CVD monosilane. Application to hydrogenated amorphous silicon thin films

    International Nuclear Information System (INIS)

    Aka, B.

    1989-04-01

    The construction of a Hg-photo-CVD device is discussed. The system enables the manufacturing of hydrogenous thin films of amorphous silicon from monosilane compound. The reaction mechanisms taking place in the gaseous phase and at the surface, and the optimal conditions for the amorphous silicon film growth are studied. The analysis technique is based on the measurement of the difference between the condensation points of the gaseous components of the mixture obtained from the monosilane photolysis. A kinetic simplified model is proposed. Conductivity measurements are performed and the heat treatment effects are analyzed. Trace amounts of oxygen and carbon are found in the material. No Hg traces are detected by SIMS analysis [fr

  12. Imaging and thickness measurement of amorphous intergranular films using TEM

    International Nuclear Information System (INIS)

    MacLaren, I.

    2004-01-01

    Fresnel fringe analysis is shown to be unreliable for grain boundaries in yttrium-doped alumina: the determined thicknesses do not agree well with those measured from high resolution transmission electron microscopy (HRTEM), the asymmetry between under- and overfocus is very large, and Fresnel fringes are sometimes shown at boundaries which contain no amorphous film. An alternative approach to the analysis of HRTEM images of grain boundary films is demonstrated: Fourier filtering is used to remove the lattice fringes from the image thereby significantly enhancing the visibility of the intergranular films. The apparent film thickness shows a discrepancy between measurements from the original HRTEM image and the filtered image. It was shown that fringe delocalisation and diffuseness of the amorphous/crystalline interfaces will lead to a significant underestimate of the thickness in unprocessed HRTEM images. In contrast to this, the average thickness can be much more accurately measured from the Fourier-filtered image, provided the boundary is oriented accurately edge-on

  13. Properties of amorphous WN sub x thin films prepared by RF magnetron sputtering

    CERN Document Server

    Han, K Y

    1999-01-01

    Amorphous WN sub x thin films were prepared as X-ray absorbers by using RF magnetron sputtering. The possibilities of anisotropic etching for the films are studied as functions of the CHF sub 3 concentration and other etching parameters by using ion etching equipment. Anisotropic etching profiles are achieved for the films prepared at a CHF sub 3 /SF sub 6 ratio of approx =0.5/0.5 in Ar, a working pressure of approx =200 mTorr, an RF power density of 0.39 W/cm sup 2 and room temperature. From an analysis of X-ray Photoelectron Spectroscopy (XPS), it is concluded that the anisotropic etching profiles are caused by an inhibitor composed of carbon compounds on the side walls of WN sub x films.

  14. Designed synthesis of tunable amorphous carbon nanotubes (a ...

    Indian Academy of Sciences (India)

    Administrator

    Amorphous carbon nanotubes; chemical synthesis; structures; oxidation resistance properties. 1. Introduction. Since the discovery of carbon ... novel route for the synthesis of a-CNTs using V3O7∙H2O and glucose solution as the starting .... symmetric band, although its asymmetric band at about. 3080 cm–1 is not observed, ...

  15. Amorphous carbon enhancement of hydrogen penetration into UO2

    International Nuclear Information System (INIS)

    Zalkind, S.; Shamir, N.; Gouder, T.; Akhvlediani, R.; Hoffman, A.

    2014-01-01

    In a previous study, it was demonstrated that an amorphous carbon layer, deposited on a native oxide covered uranium surface, significantly enhances the interaction of hydrogen with the uranium metal. Fig. 1[2], demonstrates the preferential hydrogen attack (forming uranium hydride) on the carbon covered area of the naturally oxidized uranium metal

  16. Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films

    Science.gov (United States)

    Alcinkaya, Burak; Sel, Kivanc

    2018-01-01

    The properties of phosphorus doped hydrogenated amorphous silicon carbide (a-SiCx:H) thin films, that were deposited by plasma enhanced chemical vapor deposition technique with four different carbon contents (x), were analyzed and compared with those of the intrinsic a-SiCx:H thin films. The carbon contents of the films were determined by X-ray photoelectron spectroscopy. The thickness and optical energies, such as Tauc, E04 and Urbach energies, of the thin films were determined by UV-Visible transmittance spectroscopy. The electrical properties of the films, such as conductivities and activation energies were analyzed by temperature dependent current-voltage measurements. Finally, the conduction mechanisms of the films were investigated by numerical analysis, in which the standard transport mechanism in the extended states and the nearest neighbor hopping mechanism in the band tail states were taken into consideration. It was determined that, by the effect of phosphorus doping the dominant conduction mechanism was the standard transport mechanism for all carbon contents.

  17. Incoherent Detection of Ultrasonic Using Thin Film Amorphous Semiconductors.

    Science.gov (United States)

    1979-11-01

    111112.2 3- 11111 1.25 1.4 11___ L 6 hCROCOPY RESOLUIION TESI CHART NAI NAt kHRA Ll I l A LEEL o AFML-TR-79-4170 LE E 3’ 1. Li 0 "" INCOHERENT DETECTION...OF ULTRASONICS USING THIN FILM AMORPHOUS SEMICONDUCTORS A. H. FRANCIS DEPAR TMENT OF CHEMISTRY UNIVERSITY OF MICHIGAN ANN ARBOR, MICHIGAN 48109...Department of Chemistry V AE W U .UMBER University of Michigan Ann Arbor, Michigan 48109 -O.._ It. CONTROLLING OFFICE NAME AND ADDRESS 12+UkAT 0 VM O-e

  18. Metallic Amorphous Thin Films and Heterostructures with Tunable Magnetic Properties

    OpenAIRE

    Zamani, Atieh

    2015-01-01

    The primary focus of this thesis is to study the effect of doping on magnetic properties in amorphous Fe100−xZrx alloys. Samples with compositions of x = 7,11.6 and 12 at.% were implanted with different concentrations of H. Moreover, the samples with a composition of x = 7 at.% were also implanted with He, B, C and N. Magnetic measurements were performed, using SQUID magnetometry and MOKE, in order to compare the as-grown and the implanted films. The Curie temperature (Tc) increases and the c...

  19. Fracture of Carbon Nanotube - Amorphous Carbon Composites: Molecular Modeling

    Science.gov (United States)

    Jensen, Benjamin D.; Wise, Kristopher E.; Odegard, Gregory M.

    2015-01-01

    Carbon nanotubes (CNTs) are promising candidates for use as reinforcements in next generation structural composite materials because of their extremely high specific stiffness and strength. They cannot, however, be viewed as simple replacements for carbon fibers because there are key differences between these materials in areas such as handling, processing, and matrix design. It is impossible to know for certain that CNT composites will represent a significant advance over carbon fiber composites before these various factors have been optimized, which is an extremely costly and time intensive process. This work attempts to place an upper bound on CNT composite mechanical properties by performing molecular dynamics simulations on idealized model systems with a reactive forcefield that permits modeling of both elastic deformations and fracture. Amorphous carbon (AC) was chosen for the matrix material in this work because of its structural simplicity and physical compatibility with the CNT fillers. It is also much stiffer and stronger than typical engineering polymer matrices. Three different arrangements of CNTs in the simulation cell have been investigated: a single-wall nanotube (SWNT) array, a multi-wall nanotube (MWNT) array, and a SWNT bundle system. The SWNT and MWNT array systems are clearly idealizations, but the SWNT bundle system is a step closer to real systems in which individual tubes aggregate into large assemblies. The effect of chemical crosslinking on composite properties is modeled by adding bonds between the CNTs and AC. The balance between weakening the CNTs and improving fiber-matrix load transfer is explored by systematically varying the extent of crosslinking. It is, of course, impossible to capture the full range of deformation and fracture processes that occur in real materials with even the largest atomistic molecular dynamics simulations. With this limitation in mind, the simulation results reported here provide a plausible upper limit on

  20. Optical characterisation of sputtered hydrogenated amorphous silicon thin films

    International Nuclear Information System (INIS)

    Mellassi, K.; Chafik El Idrissi, M.; Chouiyakh, A.; Rjeb, A.; Barhdadi, A.

    2000-09-01

    The present work is devoted to the study of some optical properties of hydrogenated amorphous silicon (a-Si:H) thin films prepared by radio-frequency cathodic sputtering technique. It is essentially focused on investigating separately the effects of increasing partial hydrogen pressure during the deposition stage, and the effects of post deposition thermal annealing on the main optical parameters of the deposited layers (refraction index, optical gap Urbach energy, etc.). We show that low hydrogen pressures allow a saturation of the dangling bonds in the material, while high pressures lead to the creation of new defects. We also show that thermal annealing under moderate temperatures allows a good improvement of the structural quality of deposited films. (author)

  1. Simultaneous depth profiling of constituents and impurities by elastic proton scattering in amorphous hydrogenated silicon films

    Science.gov (United States)

    Schwarz, R.; Kolodzey, J. S.; Wagner, S.; Kouzes, R. T.

    1987-01-01

    Depth profiles of various constituents and impurities of thin films were obtained simultaneously by a nuclear coincidence method. The energy spectrum of elastically scattered 12 MeV protons, measured by a high-resolution magnetic spectrometer, was used for constituent identification and total content determination. Constituents of interest were selected by software pulse height discrimination and their depth profiles were obtained from the recoil energy spectrum, measured by a surface barrier detector telescope. Thin films of Teflon, of carbon, and of amorphous hydrogenated silicon were measured. The best possible depth resolution is about 20 nm for carbon and is limited by the beam energy spread and the energy resolution of the solid state detectors.

  2. Nitrided FeB amorphous thin films for magneto mechanical systems

    International Nuclear Information System (INIS)

    Fernandez-Martinez, I.; Martin-Gonzalez, M.S.; Gonzalez-Arrabal, R.; Alvarez-Sanchez, R.; Briones, F.; Costa-Kraemer, J.L.

    2008-01-01

    The structural, magnetic and magnetoelastic properties of Fe-B-N amorphous films, sputtered from a Fe 80 B 20 target, in a mixture of argon and nitrogen gas, are studied for different nitrogen partial pressures. Nitrogen incorporates into the film preserving the amorphous structure, and modifying magnetic properties. The amount of nitrogen that incorporates into the amorphous structure is found to scale linearly with the nitrogen partial pressure during film growth. The structure, magnetization, field evolution, magnetic anisotropy and magnetostrictive behaviour are determined for films with different nitrogen content. An ∼20% increase of both the saturation magnetization and the magnetostriction constant values is found for moderate (∼8%) nitrogen content when compared to those for pure Fe 80 B 20 amorphous films. These improved properties, together with the still low coercivity of the amorphous films offer great potential for their use in magnetostrictive micro and nano magneto mechanical actuator devices

  3. Nitrided FeB amorphous thin films for magneto mechanical systems

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez-Martinez, I.; Martin-Gonzalez, M.S. [Instituto de Microelectronica de Madrid, IMM-CNM-CSIC, Isaac Newton 8 PTM, 28760 Tres Cantos, Madrid (Spain); Gonzalez-Arrabal, R. [Instituto de Microelectronica de Madrid, IMM-CNM-CSIC, Isaac Newton 8 PTM, 28760 Tres Cantos, Madrid (Spain); Centro de Microanalisis de Materiales de Materiales, Universidad Autonoma de Madrid, Cantoblanco 28049, Madrid (Spain); Alvarez-Sanchez, R.; Briones, F. [Instituto de Microelectronica de Madrid, IMM-CNM-CSIC, Isaac Newton 8 PTM, 28760 Tres Cantos, Madrid (Spain); Costa-Kraemer, J.L. [Instituto de Microelectronica de Madrid, IMM-CNM-CSIC, Isaac Newton 8 PTM, 28760 Tres Cantos, Madrid (Spain)], E-mail: kramer@imm.cnm.csic.es

    2008-01-15

    The structural, magnetic and magnetoelastic properties of Fe-B-N amorphous films, sputtered from a Fe{sub 80}B{sub 20} target, in a mixture of argon and nitrogen gas, are studied for different nitrogen partial pressures. Nitrogen incorporates into the film preserving the amorphous structure, and modifying magnetic properties. The amount of nitrogen that incorporates into the amorphous structure is found to scale linearly with the nitrogen partial pressure during film growth. The structure, magnetization, field evolution, magnetic anisotropy and magnetostrictive behaviour are determined for films with different nitrogen content. An {approx}20% increase of both the saturation magnetization and the magnetostriction constant values is found for moderate ({approx}8%) nitrogen content when compared to those for pure Fe{sub 80}B{sub 20} amorphous films. These improved properties, together with the still low coercivity of the amorphous films offer great potential for their use in magnetostrictive micro and nano magneto mechanical actuator devices.

  4. Nanostructural study of the thermal transformation of diamond-like amorphous carbon into an ultrahard carbon nanocomposite

    International Nuclear Information System (INIS)

    Martinez-Miranda, L. J.; Siegal, M. P.; Provencio, P. P.

    2001-01-01

    We studied the structural transformation of diamond-like amorphous carbon (a-C) films into ultrahard carbon nanocomposites via postannealing to 600 C using transmission electron microscopy, x-ray reflectivity, and small-angle scattering. Film density decreases monotonically above 200 C. Film surfaces roughen upon annealing to 300 C; however, a-C recovers its smoothness with higher temperature annealing. Finally, there exists some quasiperiodic nanostructural feature with a lattice spacing that increases with annealing, correlating well with purely a-C nanocomposite structures imaged from samples annealed at 600 C. We propose that these annealing-induced nanostructural changes are a derivative of localized stress fields in as-grown a-C films

  5. Nanostructural study of the thermal transformation of diamond-like amorphous carbon into an ultrahard carbon nanocomposite

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Miranda, L. J.; Siegal, M. P.; Provencio, P. P.

    2001-07-23

    We studied the structural transformation of diamond-like amorphous carbon (a-C) films into ultrahard carbon nanocomposites via postannealing to 600 C using transmission electron microscopy, x-ray reflectivity, and small-angle scattering. Film density decreases monotonically above 200 C. Film surfaces roughen upon annealing to 300 C; however, a-C recovers its smoothness with higher temperature annealing. Finally, there exists some quasiperiodic nanostructural feature with a lattice spacing that increases with annealing, correlating well with purely a-C nanocomposite structures imaged from samples annealed at 600 C. We propose that these annealing-induced nanostructural changes are a derivative of localized stress fields in as-grown a-C films.

  6. Nanostructural study of the thermal transformation of diamond-like amorphous carbon into an ultrahard carbon nanocomposite

    Science.gov (United States)

    Martínez-Miranda, L. J.; Siegal, M. P.; Provencio, P. P.

    2001-07-01

    We studied the structural transformation of diamond-like amorphous carbon (a-C) films into ultrahard carbon nanocomposites via postannealing to 600 °C using transmission electron microscopy, x-ray reflectivity, and small-angle scattering. Film density decreases monotonically above 200 °C. Film surfaces roughen upon annealing to 300 °C; however, a-C recovers its smoothness with higher temperature annealing. Finally, there exists some quasiperiodic nanostructural feature with a lattice spacing that increases with annealing, correlating well with purely a-C nanocomposite structures imaged from samples annealed at 600 °C. We propose that these annealing-induced nanostructural changes are a derivative of localized stress fields in as-grown a-C films.

  7. Formation of carbon quantum dots and nanodiamonds in laser ablation of a carbon film

    Science.gov (United States)

    Sidorov, A. I.; Lebedev, V. F.; Kobranova, A. A.; Nashchekin, A. V.

    2018-01-01

    We have experimentally shown that nanosecond near-IR pulsed laser ablation of a thin amorphous carbon film produces carbon quantum dots with a graphite structure and nanodiamonds with a characteristic size of 20 - 500 nm on the substrate surface. The formation of these nanostructures is confirmed by electron microscopic images, luminescence spectra and Raman spectra. The mechanisms explaining the observed effects are proposed.

  8. Physical–chemical and biological behavior of an amorphous calcium phosphate thin film produced by RF-magnetron sputtering

    International Nuclear Information System (INIS)

    Santos, Euler A. dos; Moldovan, Simona; Mateescu, Mihaela; Faerber, Jacques; Acosta, Manuel; Pelletier, Hervé; Anselme, Karine; Werckmann, Jacques

    2012-01-01

    This work evaluates the thermal reactivity and the biological reactivity of an amorphous calcium phosphate thin film produced by radio frequency (RF) magnetron sputtering onto titanium substrates. The analyses showed that the sputtering conditions used in this work led to the deposition of an amorphous calcium phosphate. The thermal treatment of this amorphous coating in the presence of H 2 O and CO 2 promoted the formation of a carbonated HA crystalline coating with the entrance of CO 3 2− ions into the hydroxyl HA lattice. When immersed in culture medium, the amorphous and carbonated coatings exhibited a remarkable instability. The presence of proteins increased the dissolution process, which was confirmed by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Moreover, the carbonated HA coating induced precipitation independently of the presence of proteins under dynamic conditions. Despite this surface instability, this reactive calcium phosphate significantly improved the cellular behavior. The cell proliferation was higher on the Ticp than on the calcium phosphate coatings, but the two coatings increased cellular spreading and stress fiber formation. In this sense, the presence of reactive calcium phosphate coatings can stimulate cellular behavior. - Highlights: ► Functionalization of Ti with reactive CaP thin film by RF-magnetron sputtering. ► De-hydroxylation facilitating the insertion of CO 3 2− into the HA lattice. ► High surface reactivity in the presence of culture medium. ► Cell behavior improved by the presence of reactive films.

  9. Electronic properties of intrinsic and doped amorphous silicon carbide films

    Energy Technology Data Exchange (ETDEWEB)

    Vetter, M. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain)]. E-mail: mvetter@eel.upc.edu; Voz, C. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Ferre, R. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Martin, I. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Orpella, A. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Puigdollers, J. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain); Andreu, J. [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E-08028 Barcelona (Spain); Alcubilla, R. [Departament d' Enginyeria Electronica, Universitat Politecnica de Catalunya, Gran Capita s/n, Modul C4, E-08034 Barcelona (Spain)

    2006-07-26

    Hydrogenated amorphous silicon carbide (a-SiC{sub x} : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was investigated. It is found that homogenous deposition with effective surface recombination velocity lower than 100 cms{sup -1} is possible up to 6'' diameter in a simple parallel plate reactor by optimizing deposition parameters. For application in solar cell processes the conductivity of these a-SiC{sub x} : H films might become of importance since good surface passivation results from field-effect passivation which needs an insulating dielectric layer. Therefore, the temperature dependence of the dark dc conductivity of these films was investigated in the temperature range from - 20 to 260 deg. C. Two transition temperatures, T {sub s}{approx}80 deg. C and T {sub s}{approx}170 deg. C, were found where conductivity increases, resp. decreases over-exponential. From Arrhenius plots activation energy (E {sub a}) and conductivity pre-factor ({sigma} {sub 0}) were calculated for a large number of samples with different composition. A correlation between E {sub a} and {sigma} {sub 0} was found giving a Meyer-Neldel relation with a slope of 59 mV, corresponding to a material characteristic temperature T {sub m} = 400 deg. C, and an intercept at {sigma} {sub 00} = 0.1 {omega}{sup -1}cm{sup -1}.

  10. Electronic properties of intrinsic and doped amorphous silicon carbide films

    International Nuclear Information System (INIS)

    Vetter, M.; Voz, C.; Ferre, R.; Martin, I.; Orpella, A.; Puigdollers, J.; Andreu, J.; Alcubilla, R.

    2006-01-01

    Hydrogenated amorphous silicon carbide (a-SiC x : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was investigated. It is found that homogenous deposition with effective surface recombination velocity lower than 100 cms -1 is possible up to 6'' diameter in a simple parallel plate reactor by optimizing deposition parameters. For application in solar cell processes the conductivity of these a-SiC x : H films might become of importance since good surface passivation results from field-effect passivation which needs an insulating dielectric layer. Therefore, the temperature dependence of the dark dc conductivity of these films was investigated in the temperature range from - 20 to 260 deg. C. Two transition temperatures, T s ∼80 deg. C and T s ∼170 deg. C, were found where conductivity increases, resp. decreases over-exponential. From Arrhenius plots activation energy (E a ) and conductivity pre-factor (σ 0 ) were calculated for a large number of samples with different composition. A correlation between E a and σ 0 was found giving a Meyer-Neldel relation with a slope of 59 mV, corresponding to a material characteristic temperature T m = 400 deg. C, and an intercept at σ 00 = 0.1 Ω -1 cm -1

  11. Nanostructured silicon carbon thin films grown by plasma enhanced chemical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Coscia, U. [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); CNISM Unita' di Napoli, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Ambrosone, G., E-mail: ambrosone@na.infn.it [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); SPIN-CNR, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Basa, D.K. [Department of Physics, Utkal University, Bhubaneswar 751004 (India); Rigato, V. [INFN Laboratori Nazionali Legnaro, 35020 Legnaro (Padova) (Italy); Ferrero, S.; Virga, A. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)

    2013-09-30

    Nanostructured silicon carbon thin films, composed of Si nanocrystallites embedded in hydrogenated amorphous silicon carbon matrix, have been prepared by varying rf power in ultra high vacuum plasma enhanced chemical vapour deposition system using silane and methane gas mixtures diluted in hydrogen. In this paper we have studied the compositional, structural and electrical properties of these films as a function of rf power. It is shown that with increasing rf power the atomic densities of carbon and hydrogen increase while the atomic density of silicon decreases, resulting in a reduction in the mass density. Further, it is demonstrated that carbon is incorporated into amorphous matrix and it is mainly bonded to silicon. The study has also revealed that the crystalline volume fraction decreases with increase in rf power and that the films deposited with low rf power have a size distribution of large and small crystallites while the films deposited with relatively high power have only small crystallites. Finally, the enhanced transport properties of the nanostructured silicon carbon films, as compared to amorphous counterpart, have been attributed to the presence of Si nanocrystallites. - Highlights: • The mass density of silicon carbon films decreases from 2.3 to 2 g/cm{sup 3}. • Carbon is incorporated in the amorphous phase and it is mainly bonded to silicon. • Nanostructured silicon carbon films are deposited at rf power > 40 W. • Si nanocrystallites in amorphous silicon carbon enhance the electrical properties.

  12. Designed synthesis of tunable amorphous carbon nanotubes (a ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 37; Issue 6. Designed synthesis of tunable amorphous carbon nanotubes (a-CNTs) by a novel route and their oxidation resistance properties. Longlong Xu Yifu Zhang Xiongzhi Zhang Yu Huang Xiaoyu Tan Chi Huang Xiao Mei Fei Niu Changgong Meng Gongzhen ...

  13. Modeling of amorphous carbon structures with arbitrary structural constraints.

    Science.gov (United States)

    Jornada, F H; Gava, V; Martinotto, A L; Cassol, L A; Perottoni, C A

    2010-10-06

    In this paper we describe a method to generate amorphous structures with arbitrary structural constraints. This method employs the simulated annealing algorithm to minimize a simple yet carefully tailored cost function (CF). The cost function is composed of two parts: a simple harmonic approximation for the energy-related terms and a cost that penalizes configurations that do not have atoms in the desired coordinations. Using this approach, we generated a set of amorphous carbon structures spawning nearly all the possible combinations of sp, sp(2) and sp(3) hybridizations. The bulk moduli of this set of amorphous carbons structures was calculated using Brenner's potential. The bulk modulus strongly depends on the mean coordination, following a power-law behavior with an exponent ν = 1.51 ± 0.17. A modified cost function that segregates carbon with different hybridizations is also presented, and another set of structures was generated. With this new set of amorphous materials, the correlation between the bulk modulus and the mean coordination weakens. The method proposed can be easily modified to explore the effects on the physical properties of the presence of hydrogen, dangling bonds, and structural features such as carbon rings.

  14. Quantifying clustering in disordered carbon thin films

    International Nuclear Information System (INIS)

    Carey, J.D.

    2006-01-01

    The quantification of disorder and the effects of clustering in the sp 2 phase of amorphous carbon thin films are discussed. The sp 2 phase is described in terms of disordered nanometer-sized conductive sp 2 clusters embedded in a less conductive sp 3 matrix. Quantification of the clustering of the sp 2 phase is estimated from optical as well as from electron and nuclear magnetic resonance methods. Unlike in other disordered group IV thin film semiconductors, we show that care must be exercised in attributing a meaning to the Urbach energy extracted from absorption measurements in the disordered carbon system. The influence of structural disorder, associated with sp 2 clusters of similar size, and topological disorder due to undistorted clusters of different sizes is also discussed. Extensions of this description to other systems are also presented

  15. Method for making carbon films

    Science.gov (United States)

    Tan, Ming X.

    1999-01-01

    A method for treating an organic polymer material, preferably a vinylidene chloride/vinyl chloride copolymer (Saran) to produce a flat sheet of carbon film material having a high surface area (.apprxeq.1000 m.sup.2 /g) suitable as an electrode material for super capacitor applications. The method comprises heating a vinylidene chloride/vinyl chloride copolymer film disposed between two spaced apart graphite or ceramic plates to a first temperature of about 160.degree. C. for about 14 hours to form a stabilized vinylidene chloride/vinyl chloride polymer film, thereafter heating the stabilized film to a second temperature of about 750.degree. C. in an inert atmosphere for about one hour to form a carbon film; and finally activating the carbon film to increase the surface area by heating the carbon film in an oxidizing atmosphere to a temperature of at least 750-850.degree. C. for between 1-6 hours.

  16. Unlocking the Electrocatalytic Activity of Chemically Inert Amorphous Carbon-Nitrogen for Oxygen Reduction: Discerning and Refactoring Chaotic Bonds

    DEFF Research Database (Denmark)

    Zhang, Caihong; Zhang, Wei; Wang, Dong

    2017-01-01

    Mild annealing enables inactive nitrogen (N)-doped amorphous carbon (a-C) films abundant with chaotic bonds prepared by magnetron sputtering to become effective for the oxygen reduction reaction (ORR) by virtue of generating pyridinic N. The rhythmic variation of ORR activity elaborates well on t...

  17. Low-emissivity coating of amorphous diamond-like carbon/Ag-alloy multilayer on glass

    International Nuclear Information System (INIS)

    Chiba, Kiyoshi; Takahashi, Toshiyuki; Kageyama, Takashi; Oda, Hironori

    2005-01-01

    Transparent low-emissivity (low-e) coatings comprising dielectrics of amorphous diamond-like carbon (DLC) and Ag-alloy films are investigated. All films have been prepared by dc magnetron sputtering. An index of refraction of the DLC film deposited in a gas mixture of Ar/H 2 (4%) shows n = 1.80 + 0.047i at 500 nm wavelength. A multilayer stack of DLC (70 nm thick)/Ag 87.5 Cu 12.5 -alloy (10 nm)/DLC (140 nm)/Ag 87.5 Cu 12.5 -alloy (10 nm)/DLC (70 nm) has revealed clear interference spectra with spectra selectivity. This coating performs low emittance less than 0.1 for black body radiation at 297 K, exhibiting a transparent heat mirror property embedded in DLC films

  18. Elastic Measurements of Amorphous Silicon Films at mK Temperatures

    Science.gov (United States)

    Fefferman, Andrew; Maldonado, Ana; Collin, Eddy; Liu, Xiao; Metcalf, Tom; Jernigan, Glenn

    2017-06-01

    The low-temperature properties of glass are distinct from those of crystals due to the presence of poorly understood low-energy excitations. The tunneling model proposes that these are atoms tunneling between nearby equilibria, forming tunneling two-level systems (TLSs). This model is rather successful, but it does not explain the remarkably universal value of the mechanical dissipation Q^{-1} near 1 K. The only known exceptions to this universality are the Q^{-1} of certain thin films of amorphous silicon, carbon and germanium. Recently, it was found that Q^{-1} of amorphous silicon (a-Si) films can be reduced by two orders of magnitude by increasing the temperature of the substrate during deposition. According to the tunneling model, the reduction in Q^{-1} at 1 K implies a reduction in P0γ 2, where P0 is the density of TLSs and γ is their coupling to phonons. In this preliminary report, we demonstrate elastic measurements of a-Si films down to 20 mK. This will allow us, in future work, to determine whether P0 or γ is responsible for the reduction in Q^{-1} with deposition temperature.

  19. Nanotribological performance of fullerene-like carbon nitride films

    International Nuclear Information System (INIS)

    Flores-Ruiz, Francisco Javier; Enriquez-Flores, Christian Ivan; Chiñas-Castillo, Fernando; Espinoza-Beltrán, Francisco Javier

    2014-01-01

    Highlights: • Fullerene-like CNx samples show an elastic recovery of 92.5% and 94.5% while amorphous CNx samples had only 75% elastic recovery. • Fullerene-like CNx films show an increment of 34.86% and 50.57% in fractions of C 1s and N 1s. • Fullerene-like CNx samples show a lower friction coefficient compared to amorphous CNx samples. • Friction reduction characteristics of fullerene-like CNx films are strongly related to the increase of sp 3 CN bonds. - Abstract: Fullerene-like carbon nitride films exhibit high elastic modulus and low friction coefficient. In this study, thin CNx films were deposited on silicon substrate by DC magnetron sputtering and the tribological behavior at nanoscale was evaluated using an atomic force microscope. Results show that CNx films with fullerene-like structure have a friction coefficient (CoF ∼ 0.009–0.022) that is lower than amorphous CNx films (CoF ∼ 0.028–0.032). Analysis of specimens characterized by X-ray photoelectron spectroscopy shows that films with fullerene-like structure have a higher number of sp 3 CN bonds and exhibit the best mechanical properties with high values of elastic modulus (E > 180 GPa) and hardness (H > 20 GPa). The elastic recovery determined on specimens with a fullerene-like CNx structure was of 95% while specimens of amorphous CNx structure had only 75% elastic recovery

  20. Nanotribological performance of fullerene-like carbon nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Flores-Ruiz, Francisco Javier; Enriquez-Flores, Christian Ivan [Centro de Investigación y Estudios Avanzados (CINVESTAV) IPN, Unidad Querétaro, Lib. Norponiente 2000, Real de Juriquilla, C.P. 76230, Querétaro, Qro., México (Mexico); Chiñas-Castillo, Fernando, E-mail: fernandochinas@gmail.com [Department of Mechanical Engineering, Instituto Tecnológico de Oaxaca, Oaxaca, Oax. Calz. Tecnológico No. 125, CP. 68030, Oaxaca, Oax. (Mexico); Espinoza-Beltrán, Francisco Javier [Centro de Investigación y Estudios Avanzados (CINVESTAV) IPN, Unidad Querétaro, Lib. Norponiente 2000, Real de Juriquilla, C.P. 76230, Querétaro, Qro., México (Mexico)

    2014-09-30

    Highlights: • Fullerene-like CNx samples show an elastic recovery of 92.5% and 94.5% while amorphous CNx samples had only 75% elastic recovery. • Fullerene-like CNx films show an increment of 34.86% and 50.57% in fractions of C 1s and N 1s. • Fullerene-like CNx samples show a lower friction coefficient compared to amorphous CNx samples. • Friction reduction characteristics of fullerene-like CNx films are strongly related to the increase of sp{sup 3} CN bonds. - Abstract: Fullerene-like carbon nitride films exhibit high elastic modulus and low friction coefficient. In this study, thin CNx films were deposited on silicon substrate by DC magnetron sputtering and the tribological behavior at nanoscale was evaluated using an atomic force microscope. Results show that CNx films with fullerene-like structure have a friction coefficient (CoF ∼ 0.009–0.022) that is lower than amorphous CNx films (CoF ∼ 0.028–0.032). Analysis of specimens characterized by X-ray photoelectron spectroscopy shows that films with fullerene-like structure have a higher number of sp{sup 3} CN bonds and exhibit the best mechanical properties with high values of elastic modulus (E > 180 GPa) and hardness (H > 20 GPa). The elastic recovery determined on specimens with a fullerene-like CNx structure was of 95% while specimens of amorphous CNx structure had only 75% elastic recovery.

  1. Corrosion-resistant amorphous metallic films of Mo49Cr33B18 alloy

    Science.gov (United States)

    Ramesham, R.; Distefano, S.; Fitzgerald, D.; Thakoor, A. P.; Khanna, S. K.

    1987-01-01

    Corrosion-resistant amorphous metallic alloy films of Mo49Cr33B18 with a crystallization temperature of 590 C were deposited onto glass and quartz substrates by magnetron sputter-quench technique. The amorphous nature of the films was confirmed by their diffuse X-ray diffraction patterns. The deposited films are densely packed (zone T) and exhibit low stress and good adhesion to the substrate. Corrosion current of as-deposited coating of MoCrB amorphous metallic alloy is approximately three orders of magnitude less than the corrosion current of 304 stainless steel in 1N H2SO4 solution.

  2. Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiaopu, E-mail: xl6ba@virginia.edu; Ma, Chung T.; Poon, S. Joseph, E-mail: sjp9x@virginia.edu [Department of Physics, University of Virginia, Charlottesville, Virginia 22904 (United States); Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Devaraj, Arun [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Spurgeon, Steven R.; Comes, Ryan B. [Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

    2016-01-04

    Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.

  3. Computational Evaluation of Amorphous Carbon Coating for Durable Silicon Anodes for Lithium-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Jeongwoon Hwang

    2015-10-01

    Full Text Available We investigate the structural, mechanical, and electronic properties of graphite-like amorphous carbon coating on bulky silicon to examine whether it can improve the durability of the silicon anodes of lithium-ion batteries using molecular dynamics simulations and ab-initio electronic structure calculations. Structural models of carbon coating are constructed using molecular dynamics simulations of atomic carbon deposition with low incident energies (1–16 eV. As the incident energy decreases, the ratio of sp2 carbons increases, that of sp3 decreases, and the carbon films become more porous. The films prepared with very low incident energy contain lithium-ion conducting channels. Also, those films are electrically conductive to supplement the poor conductivity of silicon and can restore their structure after large deformation to accommodate the volume change during the operations. As a result of this study, we suggest that graphite-like porous carbon coating on silicon will extend the lifetime of the silicon anodes of lithium-ion batteries.

  4. Effect of substrate temperature on the structure of amorphous oxygenated hydrocarbon films grown with a pulsed supersonic methane plasma flow

    Energy Technology Data Exchange (ETDEWEB)

    Fedoseeva, Yu. V., E-mail: fedoseeva@niic.nsc.ru [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Pozdnyakov, G.A. [Khristianovich Institute of Theoretical and Applied Mechanics, SB RAS, Novosibirsk 630090 (Russian Federation); Okotrub, A.V.; Kanygin, M.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Nastaushev, Yu. V. [Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Vilkov, O.Y. [St. Petersburg State University, St. Petersburg 198504 (Russian Federation); Bulusheva, L.G. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation)

    2016-11-01

    Highlights: • A deposition of supersonic methane plasma flow on silicon substrate produces amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) film. • The thickness, composition, and wettability of the film depend on the substrate temperature. • A rise of the substrate temperature from 500 to 700 °C promotes the sp{sup 3}-hybridization carbon formation. - Abstract: Since amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) films are promising engineering materials a study of the structure and composition of the films depending on the conditions of synthesis is important for controlling of their physicochemical properties. Here, we used the methods of scanning and transmission electron microscopy, X-ray photoelectron, near-edge X-ray absorption fine structure, Fourier transform infrared and Raman spectroscopy to reveal changes in the chemical connectivity of CO{sub x}H{sub y} films grown on silicon substrates heated to 300, 500, and 700 °C using a supersonic flow of methane plasma. It was found that the CO{sub x}H{sub y} films, deposited at 300 and 500 °C, were mainly composed of the sp{sup 2}-hybridized carbon areas with various oxygen species. A rise of the substrate temperature caused an increase of the portion of tetrahedral carbon atoms as well as carboxyl and hydroxyl groups. With growth of the substrate temperature, the film thickness reduced monotonically from 400 to 180 nm, while the film adhesion improved substantially. The films, deposited at lower temperatures, showed high hydrophilicity due to porosity and presence of oxygenated groups both at the surface and in the bulk.

  5. Implantation of xenon in amorphous carbon and silicon for brachytherapy application

    International Nuclear Information System (INIS)

    Marques, F.C.; Barbieri, P.F.; Viana, G.A.; Silva, D.S. da

    2013-01-01

    We report a procedure to implant high dose of xenon atoms (Xe) in amorphous carbon, a-C, and amorphous silicon, a-Si, for application in brachytherapy seeds. An ion beam assisted deposition (IBAD) system was used for the deposition of the films, where one ion gun was used for sputtering a carbon (or silicon) target, while the other ion gun was used to simultaneously bombard the growing film with a beam of xenon ion Xe + in the 0–300 eV range. Xe atoms were implanted into the film with concentration up to 5.5 at.%, obtained with Xe bombardment energy in the 50–150 eV range. X-ray absorption spectroscopy was used to investigate the local arrangement of the implanted Xe atoms through the Xe L III absorption edge (4.75 keV). It was observed that Xe atoms tend to agglomerate in nanoclusters in a-C and are dispersed in a-Si.

  6. Graphitization of amorphous carbon on a multiwall carbon nanotube surface by catalyst-free heating

    Science.gov (United States)

    Asaka, Koji; Karita, Motoyuki; Saito, Yahachi

    2011-08-01

    Structural changes in amorphous carbon coating the surfaces of multiwall carbon nanotubes (MWNTs) under applying an electric current were investigated by in situ transmission electron microscopy with simultaneous measurements of the bias voltage and electric current. Joule heating transformed amorphous carbon on the surfaces of individual MWNTs suspended between gold electrodes into graphite layers even without a metal catalyst through a phase of glasslike carbon. The MWNTs after the formation of ordered surface layers sustained a high current with a density of up to 3.1 × 108 A/cm2.

  7. TEM and STEM/EELS Studies of Diamond-Like Carbon (DLC) Films and Diamond Films

    OpenAIRE

    Zhang, X.

    2014-01-01

    This thesis is concerned with microstructural and chemical investigations of thin layers of diamond and diamond-like carbon (DLC) which were performed by transmission electron microscopy (TEM) in combination with electron energy loss spectroscopy. Practical aspects about the EELS technique of determining the fractions of sp2-hybridized carbon-atoms in DLC films are studied. The wear mechanism of diamond is proved by TEM to involve an atom-by-atom amorphization process driven by mechanical force.

  8. Friction and wear measurements of sputtered MoS/sub x/ films amorphized by ion bombardment

    International Nuclear Information System (INIS)

    Mikkelsen, N.J.; Chevallier, J.; Soerensen, G.; Straede, C.A.

    1988-01-01

    The present study presents an experimental evidence for amorphization of rf sputtered MoS/sub x/ films by ion bombardment. Even at low doses (3 x 10 15 ions/cm 2 ) of 400 keV argon ions a complete amorphization was confirmed by x-ray diffraction analysis and transmission electron microscopy. As a result of the ion bombardment the film density increased 100% to almost the bulk value for MoS 2 . The friction coefficient for ion beam amorphized MoS/sub x/ was measured to be 0.04 in agreement with the values reported for crystalline films but disagreeing considerably with the friction coefficient of 0.4 previously reported for amorphous films

  9. Ideality and Tunneling Level Systems (TLS) in amorphous silicon films.

    Science.gov (United States)

    Hellman, Frances

    Heat capacity, sound velocity, and internal friction of covalently bonded amorphous silicon (a-Si) films with and without hydrogen show that low energy excitations commonly called tunneling or two level systems (TLS) can be tuned over nearly 3 decades, from below detectable limits to the range commonly seen in glassy systems. This tuning is accomplished by growth temperature, thickness, growth rate, light soaking or annealing. We see a strong correlation with atomic density in a-Si and in literature analysis of other glasses, as well as with dangling bond density, sound velocity, and bond angle distribution as measured by Raman spectroscopy, but TLS density varies by orders of magnitude while these other measures of disorder vary by less than a factor of two. The lowest TLS films are grown at temperatures near 0.8 of the theoretical glass transition temperature of Si, similar to work on polymer films and suggestive that the high surface mobility at relatively low temperature of vapor deposition can produce materials close to an ideal glass, with higher density, lower energy, and low TLS due to fewer nearby configurations with similarly low energy. The TLS measured by heat capacity and internal friction are strongly correlated for pure a-Si, but not for hydrogenated a-Si, suggesting that the standard TLS model works for a-Si, but that a-Si:H possess TLS that are decoupled from the acoustic waves measured by internal friction. Internal friction measures those TLS that introduce mechanical damping; we are in the process of measuring low T dielectric loss which yield TLS with dipole moments in order to explore the correlation between different types of TLS. Additionally, a strong correlation is found between an excess T3 term (well above the sound velocity-derived Debye contribution) and the linear term in heat capacity, suggesting a common origin. I thank members of my research group and my collaborators for contributions to this work and NSF-DMR-1508828 for support.

  10. Highly stable amorphous zinc tin oxynitride thin film transistors under positive bias stress

    Science.gov (United States)

    Niang, K. M.; Bayer, B. C.; Meyer, J. C.; Flewitt, A. J.

    2017-09-01

    The stability of amorphous zinc tin oxynitride thin film transistors (a-ZTON TFTs) under positive bias stress (PBS) is investigated. Thin films are deposited by remote plasma reactive sputtering and are annealed at 300 °C in air for 1 h, after which films are confirmed to be highly amorphous by transmission electron microscopy. Typical a-ZTON TFTs exhibit a threshold voltage of 2.5 V, a field effect mobility of 3.3 cm2 V-1 s-1, a sub-threshold slope of 0.55 V dec-1, and a switching ratio over 106. Using a thermalization energy analysis, the threshold voltage shift under PBS is analysed. A maximum energy barrier to defect conversion up to 0.91 eV is found, which is significantly greater than that of the ˜0.75 eV energy barrier for amorphous indium gallium zinc oxide and amorphous zinc tin oxide TFTs previously reported. The improved stability of these oxynitride TFTs over amorphous oxide TFTs is explained by the elimination of less stable oxygen vacancies due to the passivation of oxygen vacancies with nitrogen. The higher attempt-to-escape frequency of 108 to 109 s-1 in a-ZTON TFTs compared with 107 s-1 in amorphous oxide semiconductor TFTs, on the other hand, is attributed to the high homogeneity of the amorphous film leading to strong carrier localization in the band tails.

  11. Study of CVD diamond layers with amorphous carbon admixture by Raman scattering spectroscopy

    Directory of Open Access Journals (Sweden)

    Dychalska Anna

    2015-12-01

    Full Text Available Raman spectroscopy is a most often used standard technique for characterization of different carbon materials. In this work we present the Raman spectra of polycrystalline diamond layers of different quality, synthesized by Hot Filament Chemical Vapor Deposition method (HF CVD. We show how to use Raman spectroscopy for the analysis of the Raman bands to determine the structure of diamond films as well as the structure of amorphous carbon admixture. Raman spectroscopy has become an important technique for the analysis of CVD diamond films. The first-order diamond Raman peak at ca. 1332 cm−1 is an unambiguous evidence for the presence of diamond phase in the deposited layer. However, the existence of non-diamond carbon components in a CVD diamond layer produces several overlapping peaks in the same wavenumber region as the first order diamond peak. The intensities, wavenumber, full width at half maximum (FWHM of these bands are dependent on quality of diamond layer which is dependent on the deposition conditions. The aim of the present work is to relate the features of diamond Raman spectra to the features of Raman spectra of non-diamond phase admixture and occurrence of other carbon structures in the obtained diamond thin films.

  12. Electron emission induced modifications in amorphous tetrahedral diamondlike carbon

    International Nuclear Information System (INIS)

    Mercer, T.W.; DiNardo, N.J.; Rothman, J.B.; Siegal, M.P.; Friedmann, T.A.; Martinez-Miranda, L.J.

    1998-01-01

    The cold-cathode electron emission properties of amorphous tetrahedral diamondlike carbon are promising for flat-panel display and vacuum microelectronics technologies. The onset of electron emission is, typically, preceded by open-quotes conditioningclose quotes where the material is stressed by an applied electric field. To simulate conditioning and assess its effect, we combined the spatially localized field and current of a scanning tunneling microscope tip with high-spatial-resolution characterization. Scanning force microscopy shows that conditioning alters surface morphology and electronic structure. Spatially resolved electron-energy-loss spectroscopy indicates that the predominant bonding configuration changes from predominantly fourfold to threefold coordination. copyright 1998 American Institute of Physics

  13. Thermal Treatment Dependence of the Electronic Structure of Thin Film Amorphous Boron Carbides

    Science.gov (United States)

    Driver, M. S.; Sandstrom, J.; Boyko, T.; Moewes, A.; Pokhodnya, K. I.; Li, W.; Oyler, N. A.; Caruso, A. N.

    2011-03-01

    Boron-rich semiconducting solids are important materials for next generation direct conversion solid state neutron detectors. However, rigorous understanding of the fundamental properties of these solids is drastically lacking and required before optimization of the neutron detectors may occur. To partially resolve this inadequacy, we have studied and compared the electronic and local physical structure relationship of thins films of amorphous hydrogenated boron carbide (a-B5 C:Hx) deposited by PECVD and quasicrystalline technical boron carbide (B4 C:Cy) deposited by RF MS. In an attempt to understand the near Fermi edge structure in slightly modified local environments, x-ray absorption and emission spectroscopies (XAS/XES), ultraviolet photoemission, x-ray photoemission, and solid state NMR were collected at 300 K on films thermally treated from 300 to 1100 K. The electronic structure studies reveal a unique alteration of π * and σ * states and overall chemical reduction for the 600 K and above annealed films. The solid state NMR, in comparison with reference samples, reveals a slow ordering progression; this allows us to describe the relationship between intra- and inter-icosahedral carbon on the overall electronic structure.

  14. Thermal oxidation of Zr–Cu–Al–Ni amorphous metal thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oleksak, R.P.; Hostetler, E.B.; Flynn, B.T. [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97331 (United States); McGlone, J.M.; Landau, N.P.; Wager, J.F. [School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331 (United States); Stickle, W.F. [Hewlett-Packard Company, Corvallis, OR 97333 (United States); Herman, G.S., E-mail: greg.herman@oregonstate.edu [School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR 97331 (United States)

    2015-11-30

    The initial stages of thermal oxidation for Zr–Cu–Al–Ni amorphous metal thin films were investigated using X-ray photoelectron spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. The as-deposited films had oxygen incorporated during sputter deposition, which helped to stabilize the amorphous phase. After annealing in air at 300 °C for short times (5 min) this oxygen was found to segregate to the surface or buried interface. Annealing at 300 °C for longer times leads to significant composition variation in both vertical and lateral directions, and formation of a surface oxide layer that consists primarily of Zr and Al oxides. Surface oxide formation was initially limited by back-diffusion of Cu and Ni (< 30 min), and then by outward diffusion of Zr (> 30 min). The oxidation properties are largely consistent with previous observations of Zr–Cu–Al–Ni metallic glasses, however some discrepancies were observed which could be explained by the unique sample geometry of the amorphous metal thin films. - Highlights: • Thermal oxidation of amorphous Zr–Cu–Al–Ni thin films was investigated. • Significant short-range inhomogeneities were observed in the amorphous films. • An accumulation of Cu and Ni occurs at the oxide/metal interface. • Diffusion of Zr was found to limit oxide film growth.

  15. Effect of tetrahedral amorphous carbon coating on the resistivity and wear of single-walled carbon nanotube network

    Energy Technology Data Exchange (ETDEWEB)

    Iyer, Ajai, E-mail: ajai.iyer@aalto.fi; Etula, Jarkko; Liu, Xuwen; Koskinen, Jari [Department of Materials Science and Engineering, School of Chemical Technology, Aalto University, P.O. Box 16200, 00076 Espoo (Finland); Kaskela, Antti; Kauppinen, Esko I. [NanoMaterials Group, Department of Applied Physics, School of Science, Aalto University, P.O. Box 15100, 00076 Espoo (Finland); Novikov, Serguei [Department of Micro and Nanosciences, Aalto University, P.O. Box 13500, 00076 Aalto (Finland)

    2016-05-14

    Single walled carbon nanotube networks (SWCNTNs) were coated by tetrahedral amorphous carbon (ta-C) to improve the mechanical wear properties of the composite film. The ta-C deposition was performed by using pulsed filtered cathodic vacuum arc method resulting in the generation of C+ ions in the energy range of 40–60 eV which coalesce to form a ta-C film. The primary disadvantage of this process is a significant increase in the electrical resistance of the SWCNTN post coating. The increase in the SWCNTN resistance is attributed primarily to the intrinsic stress of the ta-C coating which affects the inter-bundle junction resistance between the SWCNTN bundles. E-beam evaporated carbon was deposited on the SWCNTNs prior to the ta-C deposition in order to protect the SWCNTN from the intrinsic stress of the ta-C film. The causes of changes in electrical resistance and the effect of evaporated carbon thickness on the changes in electrical resistance and mechanical wear properties have been studied.

  16. Amorphous iron phase formation in swift heavy ion irradiated electrodeposited iron thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kuzmann, E. [Research Group for Nuclear Methods in Structural Chemistry, Department of Nulear Chemistry, Hungarian Academy of Sciences, Eoetvoes University, Budapest (Hungary)]. E-mail: kuzmann@ludens.elte.hu; Stichleutner, S. [Research Group for Nuclear Methods in Structural Chemistry, Department of Nulear Chemistry, Hungarian Academy of Sciences, Eoetvoes University, Budapest (Hungary); Havancsak, K. [Department of Solid State Physics, Eoetvoes University, Budapest (Hungary); El-Sharif, M.R. [Glasgow Caledonian University, Glasgow Scotland (United Kingdom); Chisholm, C.U. [Glasgow Caledonian University, Glasgow Scotland (United Kingdom); Doyle, O. [Glasgow Caledonian University, Glasgow Scotland (United Kingdom); Skuratov, V. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Kellner, K. [Johannes Kepler University Linz (Austria); Dora, Gy. [Research Group for Nuclear Methods in Structural Chemistry, Department of Nulear Chemistry, Hungarian Academy of Sciences, Eoetvoes University, Budapest (Hungary); Homonnay, Z. [Research Group for Nuclear Methods in Structural Chemistry, Department of Nulear Chemistry, Hungarian Academy of Sciences, Eoetvoes University, Budapest (Hungary); Vertes, A. [Research Group for Nuclear Methods in Structural Chemistry, Department of Nulear Chemistry, Hungarian Academy of Sciences, Eoetvoes University, Budapest (Hungary)

    2006-07-15

    {sup 57}Fe conversion electron Moessbauer spectroscopy, SEM, EDAX, XRD and AFM measurements were used to study the radiation effect of 246 MeV Kr ions on electrochemically deposited {sup 57}Fe thin films. Amorphous iron phase formation has been shown to occur for the first time in electrodeposited iron thin films due to the irradiation with swift heavy ions.

  17. Thermal stability studies of diamond-like carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Parmeter, J.E.; Tallant, D.R.; Siegal, M.P.

    1994-04-01

    Thin films of amorphous carbon/hydrogen, also known as diamond-like carbon or DLC, are of interest as an economical alternative to diamond in a variety of coatings applications. We have investigated the thermal stability of DLC films deposited onto tungsten and aluminum substrates via plasma CVD of methane. These films contain approximately 40 atom % hydrogen, and based on Auger spectra the carbon in the films is estimated to be 60% sp{sup 3} hybridized and 40% sp{sup 2} hybridized. Thermal desorption, Auger, and Raman measurements all indicate that the DLC films are stable to 250--300C. Between 300 and 500C, thermal evolution of hydrogen from the films is accompanied by the conversion of carbon from sp{sup 3} to sp{sup 2} hybridization, and Raman spectra indicate the conversion of the overall film structure from DLC to micro-crystalline graphite or so called ``glassy`` carbon. These results suggest that DLC of this type is potentially useful for applications in which the temperature does not exceed 250C.

  18. Superhard PVD carbon films deposited with different gradients with and without additions of titanium and silicon

    International Nuclear Information System (INIS)

    Bauer, C.

    2003-10-01

    This work focusses on thin carbon-based films, deposited by magnetron sputtering with additional argon ion bombardment (0 eV to 800 eV) without extra adhesive layer on hard metal inserts. As one possibility of increasing the reduced adherence of hard carbon films the deposition of films with additions of titanium and silicon is studied. The aim of this work is to examine the influence of a modification of the transition between substrate and film by realizing three different types of deposition gradients. The pure carbon films are amorphous, the dominant network of atoms is formed by sp 2 bonded atoms. The amount of sp 3 bonded atoms is up to 30% and is influenced by the bombarding argon ion energy. Carbon films with additions of silicon are amorphous, only in films with a high amount of titanium (approx. 20 at%) nanocomposites of titanium carbide crystals with diameters of less than 5 nm in an amorphous carbon matrix were found. The mechanical properties and the behavior of single layer carbon films strongly depend on the argon ion energy. An increase of this energy leads to higher film hardness and higher residual stress and results in the delamination of superhard carbon films on hard metal substrates. The adhesion of single layer films for ion energies of more than 200 eV is significantly improved by additions of titanium and silicon, respectively. The addition of 23 at% silicon and titanium, respectively leads to a high reduction of the residual stress. In a non-reactive PVD process thin films were deposited with a continuously gradient in chemical composition. The results of the investigations of the films with two different concentrations of titanium and silicon, respectively show that carbon-based films with a good adhesion could be deposited. The combination of the two gradients in structure and properties and in chemical composition leads in the system with carbon and silicon carbide to hard and very adhesive films. Especially for carbon films with a high

  19. Crystallization of HWCVD amorphous silicon thin films at elevated temperatures

    CSIR Research Space (South Africa)

    Muller, TFG

    2006-01-01

    Full Text Available Hot-wire chemical vapour deposition (HWCVD) has been used to prepare both hydrogenated amorphous silicon (a-Si:H) and nano/ microcrystalline thin layers as intrinsic material at different deposition conditions, in order to establish optimum...

  20. Thermal decomposition of silane to form hydrogenated amorphous Si film

    Science.gov (United States)

    Strongin, Myron; Ghosh, Arup K.; Wiesmann, Harold J.; Rock, Edward B.; Lutz, III, Harry A.

    1980-01-01

    This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silano (SiH.sub.4) or other gases comprising H and Si, at elevated temperatures of about 1700.degree.-2300.degree. C., and preferably in a vacuum of about 10.sup.-8 to 10.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.

  1. Local Structure and Anisotropy in the Amorphous Precursor= to Ba-Hexaferrite Thin Films

    Science.gov (United States)

    Snyder, J. E.; Harris, V. G.; Koon, N. C.; Sui, X.; Kryder, M. H.

    1996-03-01

    Ba-hexaferrite thin-films for recording media applications are commonly fabricated by a two-step process: sputter-deposition of an amorphous precursor, followed by annealing to crystallize the BaFe_12O_19 phase. The magnetic anisotropy of the crystalline films can be either in-plane or perpendicular, depending on the sputtering process used in the first step. However, conventional characterization techniques (x-ray diffraction and TEM) have been unable to observe any structure in the amorphous precursor films. In this study, such films are investigated by PD-EXAFS (polarization-dependent extended x-ray absorption fine structure). An anisotropic local ordered structure is observed around both Fe and Ba atoms in the "amorphous" films. This anisotropic local structure appears to determine the orientation of the fast-growing basal plane directions during crystallization, and thus the directions of the c-axes and the magnetic anisotropy. Results suggest that the structure of the amorphous films consists of networks made up of units of Fe atoms surrounded by their O nearest neighbors, that are connected together. Ba atoms appear to fit into in-between spaces as network-modifiers.

  2. Room-temperature crystallization of amorphous films by RF plasma treatment

    International Nuclear Information System (INIS)

    Ohsaki, H.; Shibayama, Y.; Yoshida, N.; Watanabe, T.; Kanemaru, S.

    2009-01-01

    The crystallization of amorphous thin films was achieved by 13.56 MHz RF (radio frequency) plasma treatment. This crystallization process has a strong advantage that the sample temperature is lower than 120 o C during the plasma treatment even without compulsory cooling and various amorphous films are crystallized after 2 min or so. This treatment works on amorphous films of various materials, independently of the film preparation method and substrate materials. Crystallization has been confirmed on amorphous thin films of sputtered ITO (tin doped indium oxide) deposited on soda-lime glass and PET (polyethylene terephthalate), of sputtered TiO 2 on soda-lime glass, of sol-gel derived TiO 2 on silicon wafer and of sputtered hydrogen-doped silicon on soda-lime glass. The plasma gas pressure was found to be the key parameter in the plasma crystallization process. The appropriate gas pressure depends on the plasma gas species and not on film or substrate materials. A Cu electrode, attached to the backside of the substrate and is electrically floated from the electric ground, was found to enhance the plasma crystallization performance

  3. Amorphous carbon nanofibres inducing high specific capacitance of deposited hydrous ruthenium oxide

    International Nuclear Information System (INIS)

    Barranco, V.; Pico, F.; Ibanez, J.; Lillo-Rodenas, M.A.; Linares-Solano, A.; Kimura, M.; Oya, A.; Rojas, R.M.; Amarilla, J.M.; Rojo, J.M.

    2009-01-01

    Composites consisting of ruthenium oxide particles deposited on amorphous carbon nanofibres are prepared by a repetitive impregnation procedure. The choice of amorphous carbon nanofibres as support of amorphous ruthenium oxide leads to composites in which the deposited oxide consists of aggregates of extremely small primary particles (1-1.5 nm-size) and showing high porosity (specific surface area of 450 m 2 g -1 ). This special deposition of the oxide seems to favour: (i) high oxide capacitance (1000 Fg -1 ) at high oxide loadings (up to 20 wt%) and (ii) high capacitance retention (ca. 80% from the initial oxide capacitance) at high current densities (200 mA cm -2 ). Amorphous carbon nanofibres are suitable supports for amorphous ruthenium oxide and perhaps for other amorphous oxides acting as active electrode materials.

  4. Presence of Amorphous Carbon Nanoparticles in Food Caramels

    Science.gov (United States)

    Sk, Md Palashuddin; Jaiswal, Amit; Paul, Anumita; Ghosh, Siddhartha Sankar; Chattopadhyay, Arun

    2012-01-01

    We report the finding of the presence of carbon nanoparticles (CNPs) in different carbohydrate based food caramels, viz. bread, jaggery, sugar caramel, corn flakes and biscuits, where the preparation involves heating of the starting material. The CNPs were amorphous in nature; the particles were spherical having sizes in the range of 4–30 nm, depending upon the source of extraction. The results also indicated that particles formed at higher temperature were smaller than those formed at lower temperature. Excitation tuneable photoluminescence was observed for all the samples with quantum yield (QY) 1.2, 0.55 and 0.63%, for CNPs from bread, jaggery and sugar caramels respectively. The present discovery suggests potential usefulness of CNPs for various biological applications, as the sources of extraction are regular food items, some of which have been consumed by humans for centuries, and thus they can be considered as safe. PMID:22540029

  5. Mechanical dissipation at elevated temperatures in tetrahedral amorphous carbon.

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, John P.; Friedmann, Thomas Aquinas; Czaplewski, David A.; Wendt, Joel Robert

    2005-05-01

    We have measured the temperature dependence of mechanical dissipation in tetrahedral amorphous carbon flexural and torsional resonators over the temperature range from 300 to 1023 K. The mechanical dissipation was found to be controlled by defects within the material, and the magnitude and temperature dependence of the dissipation were found to depend on whether flexural or torsional vibrational modes were excited. The defects that were active under flexural stresses have a relatively flat concentration from 0.4 to 0.7 eV with an ever increasing defect concentration up to 1.9 eV. Under shear stresses (torsion), the defect activation energies increase immediately beginning at 0.4 eV, with increasing defect concentration at higher energies.

  6. Mechanochemical treatment of amorphous carbon from brown sphagnum moss for the preparation of carbon nanotubes

    International Nuclear Information System (INIS)

    Onishchenko, D.V.

    2013-01-01

    Under consideration is the mechanism of multiwalled nanotubes formation during mechanical activation of amorphous carbon synthesized by pyrolysis of sphagnum moss. The formation of nanotubes has been shown to take place in the array of carbon particles. A complex study of the sorption characteristics of carbon nanotubes has been carried out. The dependence of the sorption capacity of carbon nanotubes on their storage time, as well as the effect of the process parameters of nanotubes formation on their ability for oxidative modification, is represented. (authors)

  7. Transformation of amorphous calcium carbonate to rod-like single crystal calcite via "copying" collagen template.

    Science.gov (United States)

    Xue, Zhonghui; Hu, Binbin; Dai, Shuxi; Du, Zuliang

    2015-10-01

    Collagen Langmuir films were prepared by spreading the solution of collagen over deionized water, CaCl2 solution and Ca(HCO3)2 solution. Resultant collagen Langmuir monolayers were then compressed to a lateral pressure of 10 mN/m and held there for different duration, allowing the crystallization of CaCO3. The effect of crystallization time on the phase composition and microstructure of CaCO3 was investigated. It was found that amorphous calcium carbonate (ACC) was obtained at a crystallization time of 6 h. The amorphous CaCO3 was transformed to rod-like single crystal calcite crystals at an extended crystallization time of 12 h and 24 h, via "copying" the symmetry and dimensionalities of collagen fibers. Resultant calcite crystallites were well oriented along the longitudinal axis of collagen fibers. The ordered surface structure of collagen fibers and electrostatic interactions played key roles in tuning the oriented nucleation and growth of the calcite crystallites. The mineralized collagen possessing both desired mechanical properties of collagen fiber and good biocompatibility of calcium carbonate may be assembled into an ideal biomaterial for bone implants. Copyright © 2015. Published by Elsevier B.V.

  8. Photoluminescence properties of BaMoO4 amorphous thin films

    International Nuclear Information System (INIS)

    Marques, Ana Paula Azevedo; Melo, Dulce M.A. de; Longo, Elson; Paskocimas, Carlos A.; Pizani, Paulo S.; Leite, Edson R.

    2005-01-01

    BaMoO 4 amorphous and crystalline thin films were prepared from polymeric precursors. The BaMoO 4 was deposited onto Si wafers by means of the spinning technique. The structure and optical properties of the resulting films were characterized by FTIR reflectance spectra, X-ray diffraction (XRD), atomic force microscopy (AFM) and optical reflectance. The bond Mo-O present in BaMoO 4 was confirmed by FTIR reflectance spectra. XRD characterization showed that thin films heat-treated at 600 and 200 deg. C presented the scheelite-type crystalline phase and amorphous, respectively. AFM analyses showed a considerable variation in surface morphology by comparing samples heat-treated at 200 and 600 deg. C. The reflectivity spectra showed two bands, positioned at 3.38 and 4.37 eV that were attributed to the excitonic state of Ba 2+ and electronic transitions within MoO 2- 4 , respectively. The optical band gaps of BaMoO 4 were 3.38 and 2.19 eV, for crystalline (600 deg. C/2 h) and amorphous (200 deg. C/8 h) films, respectively. The room-temperature luminescence spectra revealed an intense single-emission band in the visible region. The PL intensity of these materials was increased upon heat-treatment. The excellent optical properties observed for BaMoO 4 amorphous thin films suggested that this material is a highly promising candidate for photoluminescent applications

  9. Laser irradiation effects in crystalline and amorphous YBaCuO thin films

    Science.gov (United States)

    Lewandowski, S. J.; Jung, G.; Okunev, V. D.; Samoilenko, Z. A.; Isaev, V. A.; Abaloshev, A.; Gierlowski, P.; Klimov, A.; Barbanera, S.

    2000-11-01

    We have conducted a systematic study of the effects of laser irradiation on the properties of crystalline and amorphous YBaCuO thin films obtained by laser deposition. The irradiation experiments were mainly performed with a KrF and XeCl pulsed (25 ns) excimer lasers producing energy densities of the order of 0.1 J/cm2, but we used also Cu vapor green and Ar ion blue lasers with medium power output. In all cases the irradiation produced irreversible changes in the investigated samples. We measured structural, optical and transport properties of the irradiated films. After high dose laser treatment of crystalline (orthorombic) films their superconducting properties as a rule deteriorated, but even small dose was sufficient for a marked improvement of surface smoothness. The response of amorphous films was more complex, dependent on the substrate and relied on the presence of crystalline clusters embedded in the amorphous matrix. X-ray diffraction studies of amorphous films revealed structural transformations caused by the interaction with laser light, and the results of optical spectroscopic measurements lead to interesting conclusions concerning the band structure in the investigated materials. Photon assisted structural transformations are suggested as the possible explanation of the observed effects.

  10. Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-10-20

    To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

  11. Low temperature CVD growth of ultrathin carbon films

    Directory of Open Access Journals (Sweden)

    Chao Yang

    2016-05-01

    Full Text Available We demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC on copper foils, as well as glass substrates coated with a 100 nm thick copper layer. The characterizations revealed that the low-temperature-grown carbon films consist on few short, curved graphene layers and thin amorphous carbon films. Particularly, the low-temperature grown samples exhibited over 90% transmittance at a wavelength range of 400-750 nm and comparable sheet resistance in contrast with the 1000oC-grown one. This low-temperature growth method may offer a facile way to directly prepare visible ultrathin carbon films on various substrate surfaces that are compatible with temperatures (500-600oC used in several device processing technologies.

  12. Structural origins of magnetic anisotropy in sputtered amorphous Tb-Fe films

    Science.gov (United States)

    Harris, V. G.; Aylesworth, K. D.; Das, B. N.; Elam, W. T.; Koon, N. C.

    1992-09-01

    Using x-ray-absorption fine-structure measurements we have obtained clear evidence for structural anisotropy in amorphous sputter-deposited TbFe films exhibiting perpendicular magnetic anisotropy. Modeling of the data shows that perpendicular anisotropy in these films is associated with Fe-Fe and Tb-Tb pair correlations which are greater in plane and Tb-Fe correlations which are greater perpendicular to the film plane. Upon annealing at 300 °C the measured structural anisotropy disappears and the magnetic anisotropy decreases to a level consistent with magnetoelastic interactions between the film and substrate.

  13. Optical and structural properties of Ge-Ga-Te amorphous thin films fabricated by magnetron sputtering

    Science.gov (United States)

    Dong, Ning; Chen, Yimin; Wei, Ningning; Wang, Guoxiang; Wang, Rongping; Shen, Xiang; Dai, Shixun; Nie, Qiuhua

    2017-11-01

    We deposited amorphous Ge-Ga-Te thin films by the magnetron sputtering method, and investigated the corresponding structural and optical properties by various diagnosis tools. The as-deposited film is amorphous, while crystalline features appear gradually with increasing annealing temperature. The optical band-gap and refractive index for the as-deposited and annealed films were analyzed as a function of chemical composition. It was also found that, with increasing Te and decreasing Ge and Ga content, the films usually exhibited a higher refractive index as well as a smaller optical band gap, and the optical band gap decreased with increasing annealing temperature. These results are useful to the fabrication of integrated optical devices for the biomedical sensing applications.

  14. Charging of carbon thin films in scanning and phase-plate transmission electron microscopy

    DEFF Research Database (Denmark)

    Hettler, Simon; Kano, Emi; Dries, Manuel

    2018-01-01

    A systematic study on charging of carbon thin films under intense electron-beam irradiation was performed in a transmission electron microscope to identify the underlying physics for the functionality of hole-free phase plates. Thin amorphous carbon films fabricated by different deposition...... as simulations of the electrostatic potential distribution. The described ESD-based model explains previous experimental findings and is of general interest to any phase-related technique in a transmission electron microscope....

  15. Cu incorporated amorphous diamond like carbon (DLC) composites: An efficient electron field emitter over a wide range of temperature

    Science.gov (United States)

    Ahmed, Sk Faruque; Alam, Md Shahbaz; Mukherjee, Nillohit

    2018-03-01

    The effect of temperature on the electron field emission properties of copper incorporated amorphous diamond like carbon (a-Cu:DLC) thin films have been reported. The a-Cu:DLC thin films have been deposited on indium tin oxide (ITO) coated glass and silicon substrate by the radio frequency sputtering process. The chemical composition of the films was investigated using X-ray photoelectron spectroscopy and the micro structure was established using high resolution transmission electron microscopy. The sp2 and sp3 bonding ratio in the a-Cu:DLC have been analyzed by the Fourier transformed infrared spectroscopy studies. The material showed excellent electron field emission properties; which was optimized by varying the copper atomic percentage and temperature of the films. It was found that the threshold field and effective emission barrier were reduced significantly by copper incorporation as well as temperature and a detailed explanation towards emission mechanism has been provided.

  16. Nanodiamonds on tetrahedral amorphous carbon significantly enhance dopamine detection and cell viability.

    Science.gov (United States)

    Peltola, Emilia; Wester, Niklas; Holt, Katherine B; Johansson, Leena-Sisko; Koskinen, Jari; Myllymäki, Vesa; Laurila, Tomi

    2017-02-15

    We hypothesize that by using integrated carbon nanostructures on tetrahedral amorphous carbon (ta-C), it is possible to take the performance and characteristics of these bioelectrodes to a completely new level. The integrated carbon electrodes were realized by combining nanodiamonds (NDs) with ta-C thin films coated on Ti-coated Si-substrates. NDs were functionalized with mixture of carboxyl and amine groups ND andante or amine ND amine , carboxyl ND vox or hydroxyl groups ND H and drop-casted or spray-coated onto substrate. By utilizing these novel structures we show that (i) the detection limit for dopamine can be improved by two orders of magnitude [from 10µM to 50nM] in comparison to ta-C thin film electrodes and (ii) the coating method significantly affects electrochemical properties of NDs and (iii) the ND coatings selectively promote cell viability. ND andante and ND H showed most promising electrochemical properties. The viability of human mesenchymal stem cells and osteoblastic SaOS-2 cells was increased on all ND surfaces, whereas the viability of mouse neural stem cells and rat neuroblastic cells was improved on ND andante and ND H and reduced on ND amine and ND vox. The viability of C6 cells remained unchanged, indicating that these surfaces will not cause excess gliosis. In summary, we demonstrated here that by using functionalized NDs on ta-C thin films we can significantly improve sensitivity towards dopamine as well as selectively promote cell viability. Thus, these novel carbon nanostructures provide an interesting concept for development of various in vivo targeted sensor solutions. Copyright © 2016 Elsevier B.V. All rights reserved.

  17. Immobilization of sericin molecules via amorphous carbon plasma modified-polystyrene dish for serum-free culture

    Science.gov (United States)

    Tunma, Somruthai; Song, Doo-Hoon; Kim, Si-Eun; Kim, Kyoung-Nam; Han, Jeon-Geon; Boonyawan, Dheerawan

    2013-10-01

    In this study, we focused on sericin hydrolysates, originating from silkworm used in serum-free human bone marrow-derived mesenchymal stem cells (hBM-MSCs) culture. We reported the effect of a covalent linkage between a bioactive protein molecule and polystyrene dish surface via a carbon intermediate layer which can slow down the release rate of protein compounds into the phosphate buffer saline (PBS) solution. Films of amorphous carbon (a-C) and functionalized-carbon were deposited on PS culture dish surfaces by using a DC magnetron sputtering system and RF PECVD system. We found that a-C based-films can increase the hydrophilicity and biocompatibility of polystyrene (PS) dishes, especially a-C films and a-C:N2 films showed good attachment of hBM-MSCs at 24 h. However, in the case of silica surface (a-C:SiOx films), the cells showed a ragged and unattached boundary resulting from the presence of surface silanol groups. For the UV-vis absorbance, all carbon modified-PS dishes showed a lower release rate of sericin molecules into PBS solution than PS control. This revealed that the functionalized carbon could be enhanced by specific binding properties with given molecules. The carbon-coated PS dishes grafting with sericin protein were used in a serum-free condition. We also found that hBM-MSCs have higher percentage of proliferated cells at day 7 for the modified dishes with carbon films and coated with sericin than the PS control coated with sericin. The physical film properties were measured by atomic force microscopy (AFM), scanning electron microscope (SEM) and contact angle measurement. The presence of sbnd NH2 groups of sericin compounds on the PS dish was revealed by Fourier transform infrared spectroscopy (FTIR). The stability of covalent bonds of sericin molecules after washing out ungrafted sericin was confirmed by X-ray photoelectron spectroscopy (XPS).

  18. Immobilization of sericin molecules via amorphous carbon plasma modified-polystyrene dish for serum-free culture

    Energy Technology Data Exchange (ETDEWEB)

    Tunma, Somruthai [The Graduate School, Chiang Mai University, 239 Huay Kaew Road, Muang District, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics (ThEP), 239 Huay Kaew Road, Muang District, Chiang Mai 50200 (Thailand); Song, Doo-Hoon [Research Center for Orofacial Hard Tissue Regeneration, College of Dentistry, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-752 (Korea, Republic of); Kim, Si-Eun; Kim, Kyoung-Nam [Research Center for Orofacial Hard Tissue Regeneration, College of Dentistry, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-752 (Korea, Republic of); Department and Research Institute of Dental Biomaterials and Bioengineering, College of Dentistry, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-752 (Korea, Republic of); Han, Jeon-Geon [Center for Advanced Plasma Surface Technology, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon 440-746 (Korea, Republic of); Boonyawan, Dheerawan, E-mail: dheerawan.b@cmu.ac.th [Thailand Center of Excellence in Physics (ThEP), 239 Huay Kaew Road, Muang District, Chiang Mai 50200 (Thailand); Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, 239 Huay Kaew Road, Muang District, Chiang Mai 50200 (Thailand)

    2013-10-15

    In this study, we focused on sericin hydrolysates, originating from silkworm used in serum-free human bone marrow-derived mesenchymal stem cells (hBM-MSCs) culture. We reported the effect of a covalent linkage between a bioactive protein molecule and polystyrene dish surface via a carbon intermediate layer which can slow down the release rate of protein compounds into the phosphate buffer saline (PBS) solution. Films of amorphous carbon (a-C) and functionalized-carbon were deposited on PS culture dish surfaces by using a DC magnetron sputtering system and RF PECVD system. We found that a-C based-films can increase the hydrophilicity and biocompatibility of polystyrene (PS) dishes, especially a-C films and a-C:N{sub 2} films showed good attachment of hBM-MSCs at 24 h. However, in the case of silica surface (a-C:SiO{sub x} films), the cells showed a ragged and unattached boundary resulting from the presence of surface silanol groups. For the UV–vis absorbance, all carbon modified-PS dishes showed a lower release rate of sericin molecules into PBS solution than PS control. This revealed that the functionalized carbon could be enhanced by specific binding properties with given molecules. The carbon-coated PS dishes grafting with sericin protein were used in a serum-free condition. We also found that hBM-MSCs have higher percentage of proliferated cells at day 7 for the modified dishes with carbon films and coated with sericin than the PS control coated with sericin. The physical film properties were measured by atomic force microscopy (AFM), scanning electron microscope (SEM) and contact angle measurement. The presence of -NH{sub 2} groups of sericin compounds on the PS dish was revealed by Fourier transform infrared spectroscopy (FTIR). The stability of covalent bonds of sericin molecules after washing out ungrafted sericin was confirmed by X-ray photoelectron spectroscopy (XPS).

  19. Immobilization of sericin molecules via amorphous carbon plasma modified-polystyrene dish for serum-free culture

    International Nuclear Information System (INIS)

    Tunma, Somruthai; Song, Doo-Hoon; Kim, Si-Eun; Kim, Kyoung-Nam; Han, Jeon-Geon; Boonyawan, Dheerawan

    2013-01-01

    In this study, we focused on sericin hydrolysates, originating from silkworm used in serum-free human bone marrow-derived mesenchymal stem cells (hBM-MSCs) culture. We reported the effect of a covalent linkage between a bioactive protein molecule and polystyrene dish surface via a carbon intermediate layer which can slow down the release rate of protein compounds into the phosphate buffer saline (PBS) solution. Films of amorphous carbon (a-C) and functionalized-carbon were deposited on PS culture dish surfaces by using a DC magnetron sputtering system and RF PECVD system. We found that a-C based-films can increase the hydrophilicity and biocompatibility of polystyrene (PS) dishes, especially a-C films and a-C:N 2 films showed good attachment of hBM-MSCs at 24 h. However, in the case of silica surface (a-C:SiO x films), the cells showed a ragged and unattached boundary resulting from the presence of surface silanol groups. For the UV–vis absorbance, all carbon modified-PS dishes showed a lower release rate of sericin molecules into PBS solution than PS control. This revealed that the functionalized carbon could be enhanced by specific binding properties with given molecules. The carbon-coated PS dishes grafting with sericin protein were used in a serum-free condition. We also found that hBM-MSCs have higher percentage of proliferated cells at day 7 for the modified dishes with carbon films and coated with sericin than the PS control coated with sericin. The physical film properties were measured by atomic force microscopy (AFM), scanning electron microscope (SEM) and contact angle measurement. The presence of -NH 2 groups of sericin compounds on the PS dish was revealed by Fourier transform infrared spectroscopy (FTIR). The stability of covalent bonds of sericin molecules after washing out ungrafted sericin was confirmed by X-ray photoelectron spectroscopy (XPS).

  20. Analysis of pulsed laser deposited amorphous chalcogenide film thickness distribution: Plume deflection angle dependence

    OpenAIRE

    Pavlišta , Martin; Zajac , Vit; Nazabal , Virginie; Gutwirth , Jan; Gouttefangeas , Francis; Němec , Petr

    2018-01-01

    International audience; Pulsed laser deposition exploiting a KrF excimer laser was used to fabricate amorphous As-S thin films from bulk As2S3 glass target. Thickness profile of the film was extracted from variable angle spectroscopic ellipsometry data. The dependence of thickness distribution of prepared thin layer on laser beam plume deflection angle was evaluated and corresponding equations were suggested.

  1. Formation and structure of V-Zr amorphous alloy thin films

    KAUST Repository

    King, Daniel J M

    2015-01-01

    Although the equilibrium phase diagram predicts that alloys in the central part of the V-Zr system should consist of V2Zr Laves phase with partial segregation of one element, it is known that under non-equilibrium conditions these materials can form amorphous structures. Here we examine the structures and stabilities of thin film V-Zr alloys deposited at room temperature by magnetron sputtering. The films were characterized by X-ray diffraction, transmission electron microscopy and computational methods. Atomic-scale modelling was used to investigate the enthalpies of formation of the various competing structures. The calculations confirmed that an amorphous solid solution would be significantly more stable than a random body-centred solid solution of the elements, in agreement with the experimental results. In addition, the modelling effort provided insight into the probable atomic configurations of the amorphous structures allowing predictions of the average distance to the first and second nearest neighbours in the system.

  2. Fast diffusion and nucleation of the amorphous phase in Ni--Zr films

    International Nuclear Information System (INIS)

    Ehrhart, P.; Averback, R.S.; Hahn, H.; Yadavalli, S.; Flynn, C.P.

    1988-01-01

    The nucleation of the amorphous phase by solid-state reactions has been investigated on single-crystal Zr films grown by molecular beam epitaxy and covered in situ with either polycrystalline Ni, amorphous (a-) NiZr, or single-crystalline Zr 99 N 01 films. Interfacial reactions were investigated by backscattering analysis or secondary ion mass spectroscopy. The amorphizing reaction occurred only in the specimen with the a-NiZr overlayer, although fast Ni diffusion through the single-crystalline Zr layer was observed in all three specimens. The nucleation behavior of a-NiZr is attributed to the combination of high-Ni and low-Zr mobility in crystalline Zr

  3. Photoconductivity studies on amorphous and crystalline TiO{sub 2} films doped with gold nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Valverde-Aguilar, G.; Garcia-Macedo, J.A. [Universidad Nacional Autonoma de Mexico, Departamento de Estado Solido, Instituto de Fisica, Mexico D.F. (Mexico); Renteria-Tapia, V. [Universidad de Guadalajara, Centro Universitario de los Valles, Departamento de Ciencias Naturales y Exactas, Ameca, Jalisco (Mexico); Aguilar-Franco, M. [Universidad Nacional Autonoma de Mexico, Departamento de Fisica Quimica, Instituto de Fisica, Mexico D.F. (Mexico)

    2011-06-15

    In this work, amorphous and crystalline TiO{sub 2} films were synthesized by the sol-gel process at room temperature. The TiO{sub 2} films were doped with gold nanoparticles. The films were spin-coated on glass wafers. The crystalline samples were annealed at 100 C for 30 minutes and sintered at 520 C for 2 h. All films were characterized using X-ray diffraction, transmission electronic microscopy and UV-Vis absorption spectroscopy. Two crystalline phases, anatase and rutile, were formed in the matrix TiO{sub 2} and TiO{sub 2}/Au. An absorption peak was located at 570 nm (amorphous) and 645 nm (anatase). Photoconductivity studies were performed on these films. The experimental data were fitted with straight lines at darkness and under illumination at 515 nm and 645 nm. This indicates an ohmic behavior. Crystalline TiO{sub 2}/Au films are more photoconductive than the amorphous ones. (orig.)

  4. Heat capacity of amorphous and disordered Nb3Ge thin films

    International Nuclear Information System (INIS)

    Rao, N.A.H.K.

    1979-06-01

    Heat capacity measurements on 1000 to 1500A thick amorphous Nb 3 Ge and granular Al films have been carried out using an ac technique. The major goal of the experiment was to study the effect of thermal fluctuations, both above and below the superconducting transition temperature T/sub c/, in dirty, short meanfree path materials

  5. Analysis of frequency dispersion in amorphous In–Ga–Zn–O thin-film transistors

    NARCIS (Netherlands)

    Bhoolokam, A.; Nag, M.; Chasin, A.; Steudel, S.; Genoe, J.; Gelinck, G.; Groeseneken, G.; Heremans, P.

    2015-01-01

    It is shown in this paper that the finite resistance of the accumulation channel in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs) is the main cause of the frequency dispersion of the capacitance–voltage curves in these devices. A transmission line model, accounting for the distributed

  6. Pulsed laser deposition of Co- and Fe-based amorphous magnetic films and multilayers

    Czech Academy of Sciences Publication Activity Database

    Acquaviva, S.; Caricato, A. P.; D'Anna, E.; Fernández, M.; Luches, A.; Frait, Zdeněk; Majková, E.; Ozvold, M.; Luby, S.; Mengucci, P.

    2003-01-01

    Roč. 433, 1-2 (2003), s. 252-258 ISSN 0040-6090 Grant - others:NATO(XX) PST.CLG.978058; VEGA(SK) 2/1106/22 Institutional research plan: CEZ:AV0Z1010914 Keywords : laser ablation * amorphous magnetic materials * magnetic thin films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.598, year: 2003

  7. Carbon isotope fractionation between amorphous calcium carbonate and calcite in earthworm-produced calcium carbonate

    International Nuclear Information System (INIS)

    Versteegh, E.A.A.; Black, S.; Hodson, M.E.

    2017-01-01

    In this study we investigate carbon isotope fractionation during the crystallization of biogenic calcium carbonate. Several species of earthworm including Lumbricus terrestris secrete CaCO 3 . Initially a milky fluid comprising micro-spherules of amorphous CaCO 3 (ACC) is secreted into pouches of the earthworm calciferous gland. The micro-spherules coalesce and crystalize to form millimetre scale granules, largely comprising calcite. These are secreted into the earthworm intestine and from there into the soil. L. terrestris were cultured for 28 days in two different soils, moistened with three different mineral waters at 10, 16 and 20 °C. The milky fluid in the calciferous glands, granules in the pouches of the calciferous glands and granules excreted into the soil were collected and analysed by FTIR spectroscopy to determine the form of CaCO 3 present and by IRMS to determine δ 13 C values. The milky fluid was ACC. Granules removed from the pouches and soil were largely calcite; the granules removed from the pouches contained more residual ACC than those recovered from the soil. The δ 13 C values of milky fluid and pouch granules became significantly more negative with increasing temperature (p ≤ 0.001). For samples from each temperature treatment, δ 13 C values became significantly (p ≤ 0.001) more negative from the milky fluid to the pouch granules to the soil granules (−13.77, −14.69 and −15.00 respectively at 10 °C; −14.37, −15.07 and −15.18 respectively at 16 °C and −14.89, −15.41 and −15.65 respectively at 20 °C). Fractionation of C isotopes occurred as the ACC recrystallized to form calcite with the fractionation factor ε calcite-ACC  = −1.20 ± 0.52‰. This is consistent with the crystallization involving dissolution and reprecipitation rather than a solid state rearrangement. Although C isotopic fractionation has previously been described between different species of dissolved inorganic carbon and

  8. Effect of varying nitrogen flow rates on the optical properties of amorphous-SiCN thin films

    Science.gov (United States)

    Rahman, Mohd Azam Abdul; Tong, Goh Boon; Mahmood, Mohamad Rusop; Siong, Chiu Wee; Yian, Haw Choon; Rahman, Saadah Abdul

    2016-11-01

    Series of amorphous silicon carbon nitride (a-SiCN) films are synthesized using RF-PECVD technique on glass and silicon substrates from precursor gas of silane, methane and nitrogen. In this work, the change in nitrogen flow rate from 0 sccm to 50 sccm is a mean used to vary the elemental composition and bonding properties which lead to change in optical properties. The films thickness varies between 327 nm to 944 nm. The changes for the stated properties are discussed against the change in the stated nitrogen flow rate. The optical properties are investigated by means of UV-VIS spectroscopy in the wavelength range of 190 nm to 2500 nm. The transmittance of the films at ultra-violet wavelength is found to increases with increase in nitrogen flow rate. The index of refraction, n obtained for SiCN films from transmittance and reflectance measurements is lower compared to SiC films. The films optical band gap increases from 1.74 eV to 2.08 eV before it decreases to 1.89 eV as nitrogen flow rate increases from 0 to 50 sccm. The optical dispersion parameters were determined according to Wemple and Didomenico method.

  9. Carbon film electrodes for super capacitor applications

    Science.gov (United States)

    Tan, Ming X.

    1999-01-01

    A microporous carbon film for use as electrodes in energy strorage devices is disclosed, which is made by the process comprising the steps of: (1) heating a polymer film material consisting essentially of a copolymer of polyvinylidene chloride and polyvinyl chloride in an inert atmosphere to form a carbon film; and (2) activating said carbon film to form said microporous carbon film having a density between about 0.7 g/cm.sup.2 and 1 g/cm.sup.2 and a gravimetric capacitance of about between 120 F/g and 315 F/g.

  10. The application of Car-Parrinello molecular dynamics to the study of tetrahedral amorphous carbon

    International Nuclear Information System (INIS)

    McKenzie, D.R.; McCulloch, D.G.; Goringe, C.M.

    1998-01-01

    The Car-Parrinello method for carrying out molecular dynamics enables the forces between atoms to be calculated by solving Schroedinger's equation for the valence electrons using Density Functional Theory. The method is capable of giving good structural predictions for amorphous network solids by quenching from the melt, even in situations where the bonding changes from one site to another. In amorphous carbon where, depending on its environment, carbon may show sp 2 or sp 3 bonds. The method is applied here to the study of network solids using the example of tetrahedral amorphous carbon

  11. Solubility and bioavailability of stabilized amorphous calcium carbonate.

    Science.gov (United States)

    Meiron, Oren E; Bar-David, Elad; Aflalo, Eliahu D; Shechter, Assaf; Stepensky, David; Berman, Amir; Sagi, Amir

    2011-02-01

    Since its role in the prevention of osteoporosis in humans was proven some 30 years ago, calcium bioavailability has been the subject of numerous scientific studies. Recent technology allowing the production of a stable amorphous calcium carbonate (ACC) now enables a bioavailability analysis of this unique form of calcium. This study thus compares the solubility and fractional absorption of ACC, ACC with chitosan (ACC-C), and crystalline calcium carbonate (CCC). Solubility was evaluated by dissolving these preparations in dilute phosphoric acid. The results demonstrated that both ACC and ACC-C are more soluble than CCC. Fractional absorption was evaluated by intrinsically labeling calcium carbonate preparations with (45)Ca, orally administrated to rats using gelatin capsules. Fractional absorption was determined by evaluating the percentage of the administrated radioactive dose per milliliter that was measured in the serum, calcium absorption in the femur, and whole-body retention over a 34-hour period. Calcium serum analysis revealed that calcium absorption from ACC and ACC-C preparations was up to 40% higher than from CCC, whereas retention of ACC and ACC-C was up to 26.5% higher than CCC. Absorbed calcium in the femurs of ACC-administrated rats was 30% higher than in CCC-treated animals, whereas 15% more calcium was absorbed following ACC-C treatment than following CCC treatment. This study demonstrates the enhanced solubility and bioavailability of ACC over CCC. The use of stable ACC as a highly bioavailable dietary source for calcium is proposed based on the findings of this study. Copyright © 2011 American Society for Bone and Mineral Research.

  12. Amorphous Carbon Deposited by a Novel Aerosol-Assisted Chemical Vapor Deposition for Photovoltaic Solar Cells

    Science.gov (United States)

    Ahmad, Nurfadzilah; Kamaruzzaman, Dayana; Rusop, Mohamad

    2012-06-01

    Amorphous carbon (a-C) solar cells were successfully prepared using a novel and self-designed aerosol-assisted chemical vapor deposition (AACVD) method using camphor oil as a precursor. The fabricated solar cell with the configuration of Au/p-C/n-Si/Au achieved an efficiency of 0.008% with a fill factor of 0.15 for the device deposited at 0.5 h. The current-voltage (I-V) graph emphasized on the linear graph (ohmic) for the a-C thin films, whereas for the p-n device structure, a rectifying curve was obtained. The rectifying curves signify the heterojunction between the p-type a-C film and the n-Si substrate and designate the generation of electron-hole pair of the samples under illumination. Photoresponse characteristics of the deposited a-C was highlighted when being illuminated (AM 1.5 illumination: 100 mW/cm2, 25 °C). Transmittance spectrum exhibit a large transmittance value (>85%) and absorption coefficient value of 103-104 cm-1 at the visible range of 390 to 790 nm. The atomization of a liquid precursor solution into fine sub-micrometre-sized aerosol droplets in AACVD induced the smooth surface of a-C films. To the best of our knowledge, fabrication of a-C solar cell using this AACVD method has not yet been reported.

  13. Magnetism of Amorphous and Nano-Crystallized Dc-Sputter-Deposited MgO Thin Films

    Directory of Open Access Journals (Sweden)

    K. V. Rao

    2013-08-01

    Full Text Available We report a systematic study of room-temperature ferromagnetism (RTFM in pristine MgO thin films in their amorphous and nano-crystalline states. The as deposited dc-sputtered films of pristine MgO on Si substrates using a metallic Mg target in an O2 containing working gas atmosphere of (N2 + O2 are found to be X-ray amorphous. All these films obtained with oxygen partial pressure (PO2 ~10% to 80% while maintaining the same total pressure of the working gas are found to be ferromagnetic at room temperature. The room temperature saturation magnetization (MS value of 2.68 emu/cm3 obtained for the MgO film deposited in PO2 of 10% increases to 9.62 emu/cm3 for film deposited at PO2 of 40%. However, the MS values decrease steadily for further increase of oxygen partial pressure during deposition. On thermal annealing at temperatures in the range 600 to 800 °C, the films become nanocrystalline and as the crystallite size grows with longer annealing times and higher temperature, MS decreases. Our study clearly points out that it is possible to tailor the magnetic properties of thin films of MgO. The room temperature ferromagnetism in MgO films is attributed to the presence of Mg cation vacancies.

  14. Ga–Ge–Te amorphous thin films fabricated by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Němec, P. [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.fr [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic); Equipe Verres et Céramiques, UMR-CNRS 6226, Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes 1, 35042 Rennes Cedex (France); Dussauze, M. [ISM, UMR-CNRS 5255, Université de Bordeaux, 33400 Talence (France); Ma, H.-L.; Bouyrie, Y.; Zhang, X.-H. [Equipe Verres et Céramiques, UMR-CNRS 6226, Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes 1, 35042 Rennes Cedex (France)

    2013-03-01

    UV pulsed laser deposition was employed for the fabrication of amorphous Ga–Ge–Te thin films. The local structure of the bulk glasses as well as corresponding thin films was studied using Raman scattering spectroscopy; the main structural motifs were found to be [GeTe{sub 4}], eventually [GaTe{sub 4}] corner-sharing tetrahedra and disordered Te chains. Optical functions of the films (refractive index, extinction coefficient) were characterized by variable angle spectroscopic ellipsometry. Photostability experiments showed all Ga–Ge–Te laser deposited films to be stable against 1550 nm laser irradiation in an as-deposited state. In an annealed state, the most photostable composition seems to be Ga{sub 10}Ge{sub 15}Te{sub 75}. This particular composition was further studied from the point of view of thermal stability and stability against ageing in as-deposited state. - Highlights: ► Pulsed laser deposition was used for fabrication of amorphous Ga–Ge–Te thin films. ► GeTe{sub 4}, eventually GaTe{sub 4} tetrahedra and disordered Te chains form the film structure. ► Optical functions of Ge–Ga–Te films were characterized by spectroscopic ellipsometry. ► All as-deposited Ga–Ge–Te thin films are stable against 1550 nm irradiation. ► In annealed state, the most photostable composition seems to be Ga{sub 10}Ge{sub 15}Te{sub 75}.

  15. Far-infrared reflection-absorption spectroscopy of amorphous and polycrystalline gallium arsenide films

    International Nuclear Information System (INIS)

    Gregory, J.R.

    1992-01-01

    We have reported far-infrared reflection absorption spectra (30-320CM -1 ) at 30 and 310K for nine films of non-stoichiometric GaAs. The FIRRAS measurements were performed using the grazing incidence FIR double-modulation spectroscopy technique first described by DaCosta and Coleman. The films were fabricated by molecular beam deposition on metallized substrates for two As/Ga molecular beam flux ratios. The films were characterized by depth profilometry, IRAS, XRD, and x-ray microprobe analysis. Film thicknesses ranged from 800 to 5800 angstrom and compositions were 45-50% As for a MB flux ratio of 0.29 and 60-70% As for a ratio of 1.12. FIRRAS measurements were made and characterizations performed for as-deposited films and for 5 hour anneals at 473, 573, 673 and 723 degrees C. Vibrational spectra of the crystallized films were interpreted in terms of the exact reflectivity of a thin dielectric film on a conducting substrate, using a classical Lorentzian dielectric function for the response of the film. Resonances appearing in the open-quote forbidden close-quote region between the TO and LO frequencies were modelled with an effective medium approximation and are interpreted as arising from small-scale surface roughness. The behavior of the amorphous film spectra were examined within two models. The effective force constant model describes the variation of the reflection-absorption maxima with measured crystallite size in terms of the effective vibration frequency of 1-D atomic chains having force constants distributed according to the parameters of the crystalline-to-amorphous relaxation length and the crystalline to amorphous force constant ratio. The dielectric function continuum model uses the relaxation of the crystal momentum selection rule to calculate the reflection-absorption spectrum based on a dielectric function in which the oscillator strength is the normalized product of a constant dipole strength and the smoothed vibrational density of states

  16. Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Aikawa, Shinya, E-mail: aikawa@cc.kogakuin.ac.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Research Institute for Science and Technology, Kogakuin University, Hachioji, Tokyo 192-0015 (Japan); Mitoma, Nobuhiko; Kizu, Takio; Tsukagoshi, Kazuhito, E-mail: aikawa@cc.kogakuin.ac.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan)

    2015-05-11

    We discuss the environmental instability of amorphous indium oxide (InO{sub x})-based thin-film transistors (TFTs) in terms of the excess oxygen in the semiconductor films. A comparison between amorphous InO{sub x} doped with low and high concentrations of oxygen binder (SiO{sub 2}) showed that out-diffusion of oxygen molecules causes drastic changes in the film conductivity and TFT turn-on voltages. Incorporation of sufficient SiO{sub 2} could suppress fluctuations in excess oxygen because of the high oxygen bond-dissociation energy and low Gibbs free energy. Consequently, the TFT operation became rather stable. The results would be useful for the design of reliable oxide TFTs with stable electrical properties.

  17. Optical characterization of the coloration process in electrochromic amorphous and crystalline WO3 films by spectroscopic ellipsometry

    Science.gov (United States)

    Yuan, Guangzhong; Hua, Chenzheng; Huang, Li; Defranoux, Christophe; Basa, Peter; Liu, Yong; Song, Chenlu; Han, Gaorong

    2017-11-01

    Amorphous and crystalline electrochromic WO3 films exhibit quite different optical properties during coloration process. In the present work, amorphous and crystalline electrochromic WO3 films prepared by a solution method were characterized using X-ray diffraction, scanning electron microscope, and transmission electron microscope techniques. A double-layer model with sharp interfaces was established for the fitting of the ellipsometry parameters. The results show that the proton favors amorphous films more than crystalline WO3 films. The refractive indices of both amorphous and polycrystalline WO3 films decrease while extinction coefficients increase with the inserting of H+ during the coloration process. But the optical parameters of the latter are much more sensitive to the H+ ions injected compared to the amorphous WO3 during the coloration process. That is the refractive index modulation of the crystalline WO3 films is about 53% at 633 nm while that of the amorphous films about 15% at the same wavelength. The Drude-like free electron model for crystalline WO3 and hopping mechanism of small polaron for amorphous WO3 are used to explain the difference in detail. These results are very helpful for the better understanding of the coloration process and for the design of electrochromic devices.

  18. Study of some structural properties of hydrogenated amorphous silicon thin films prepared by radiofrequency cathodic sputtering

    International Nuclear Information System (INIS)

    Mellassi, K.; Chafik El Idrissi, M.; Barhdadi, A.

    2001-08-01

    In this work, we have used the grazing X-rays reflectometry technique to characterise hydrogenated amorphous silicon thin films deposited by radio-frequency cathodic sputtering. Relfectometry measurements are taken immediately after films deposition as well as after having naturally oxidised their surfaces during a more or less prolonged stay in the ambient. For the films examined just after deposition, the role of hydrogen appears in the increase of their density. For those analysed after a short stay in the ambient, hydrogen plays a protective role against the oxidation of their surfaces. This role disappears when the stay in the ambient is so long. (author)

  19. Enhanced photoluminescence from ring resonators in hydrogenated amorphous silicon thin films at telecommunications wavelengths.

    Science.gov (United States)

    Patton, Ryan J; Wood, Michael G; Reano, Ronald M

    2017-11-01

    We report enhanced photoluminescence in the telecommunications wavelength range in ring resonators patterned in hydrogenated amorphous silicon thin films deposited via low-temperature plasma enhanced chemical vapor deposition. The thin films exhibit broadband photoluminescence that is enhanced by up to 5 dB by the resonant modes of the ring resonators due to the Purcell effect. Ellipsometry measurements of the thin films show a refractive index comparable to crystalline silicon and an extinction coefficient on the order of 0.001 from 1300 nm to 1600 nm wavelengths. The results are promising for chip-scale integrated optical light sources.

  20. Evidence for the concentration induced extinction of gas sensitivity in amorphous and nanostructured Te thin films

    International Nuclear Information System (INIS)

    Tsiulyanu, D.; Mocreac, O.; Enachi, M.; Volodina, G.

    2013-01-01

    The extinction of sensitivity to nitrogen dioxide induced by high gas concentration have been observed in ultrathin tellurium films. The phenomenon becomes apparent in both continuous and nanostructured films shown by AFM, SEM and XRD analyses to be in amorphous state. Sensitivity of 30 nm thickness Te film decreases near linearly with concentration increase between 150 and 500 ppb of nitrogen dioxide. The results are explained in terms of formation of a nitrogen dioxide catalytic gate in which a molecule adsorbs (and desorbs) without reacting. (authors)

  1. Non-localized deformation in Cu−Zr multi-layer amorphous films under tension

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, C. [International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Materials, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Zhang, H. [International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Materials, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 1H9 (Canada); Cao, Q.P.; Wang, X.D. [International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Materials, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Zhang, D.X. [State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027 (China); Hu, J.W. [Hangzhou Workers Amateur University, Hangzhou 310027 (China); Liaw, P.K. [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 (United States); Jiang, J.Z., E-mail: jiangjz@zju.edu.cn [International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Materials, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2016-09-05

    In metallic glasses (MGs), plastic deformation at room temperature is dominated by highly localized shear bands. Here we report the non-localized deformation under tension in Cu−Zr multi-layer MGs with a pure amorphous structure using large-scale atomistic simulations. It is demonstrated that amorphous samples with high layer numbers, composed of Cu{sub 64}Zr{sub 36} and Cu{sub 40}Zr{sub 60}, or Cu{sub 64}Zr{sub 36} and Cu{sub 50}Zr{sub 50}, present obviously non-localized deformation behavior. We reveal that the deformation behavior of the multi-layer-structured MG films is related but not determined by the deformation behavior of the composed individual layers. The criterion for the deformation mode change for MGs with a pure amorphous structure, in generally, was suggested, i.e., the competition between the elastic-energy density stored and the energy density needed for forming one mature shear band in MGs. Our results provide a promising strategy for designing tensile ductile MGs with a pure amorphous structure at room temperature. - Highlights: • Tensile deformation behaviors in multi-layer MG films. • Films with high layer numbers confirmed with a non-localized deformation behavior. • The deformation mode is reasonably controlled by whether U{sub p} larger than U{sub SB.}.

  2. Effect of silicon and oxygen dopants on the stability of hydrogenated amorphous carbon under harsh environmental conditions

    Energy Technology Data Exchange (ETDEWEB)

    Mangolini, Filippo [Univ. of Texas, Austin, TX (United States); Krick, Brandon A. [Lehigh Univ., Bethlehem, PA (United States); Jacobs, Tevis D. B. [Univ. of Pittsburgh, PA (United States); Khanal, Subarna R. [Univ. of Pittsburgh, PA (United States); Streller, Frank [Univ. of Pennsylvania, Philadelphia, PA (United States); McClimon, J. Brandon [Univ. of Pennsylvania, Philadelphia, PA (United States); Hilbert, James [Univ. of Pennsylvania, Philadelphia, PA (United States); Prasad, Somuri V. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Scharf, Thomas W. [Univ. of North Texas, Denton, TX (United States); Ohlhausen, James A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Lukes, Jennifer R. [Univ. of Pennsylvania, Philadelphia, PA (United States); Sawyer, W. Gregory [Univ. of Florida, Gainesville, FL (United States); Carpick, Robert W. [Univ. of Pennsylvania, Philadelphia, PA (United States)

    2018-04-01

    Harsh environments pose materials durability challenges across the automotive, aerospace, and manufacturing sectors, and beyond. While amorphous carbon materials have been used as coatings in many environmentally-demanding applications owing to their unique mechanical, electrical, and optical properties, their limited thermal stability and high reactivity in oxidizing environments have impeded their use in many technologies. Silicon- and oxygen-containing hydrogenated amorphous carbon (a-C:H:Si:O) films are promising for several applications because of their higher thermal stability and lower residual stress compared to hydrogenated amorphous carbon (a-C:H). However, an understanding of their superior thermo-oxidative stability compared to a-C:H is lacking, as it has been inhibited by the intrinsic challenge of characterizing an amorphous, multi-component material. Here, we show that introducing silicon and oxygen in a-C:H slightly enhances the thermal stability in vacuum, but tremendously increases the thermo-oxidative stability and the resistance to degradation upon exposure to the harsh conditions of low Earth orbit (LEO). The latter is demonstrated by having mounted samples of a-C:H:Si:O on the exterior of the International Space Station via the Materials International Space Station (MISSE) mission 7b. Exposing lightly-doped a-C:H:Si:O to elevated temperatures under aerobic conditions or to LEO causes carbon volatilization in the near-surface region, producing a silica surface layer that protects the underlying carbon from further removal. In conclusion, these findings provide a novel physically-based understanding of the superior stability of a-C:H:Si:O in harsh environments compared to a-C:H.

  3. Hydrogen diffusion and induced-crystallization in intrinsic and doped hydrogenated amorphous silicon films

    International Nuclear Information System (INIS)

    Kail, F.; Hadjadj, A.; Roca i Cabarrocas, P.

    2005-01-01

    We have studied the evolution of the structure of intrinsic and doped hydrogenated amorphous silicon films exposed to a hydrogen plasma. For this purpose, we combine in situ spectroscopic ellipsometry and secondary ion mass spectrometry measurements. We show that hydrogen diffuses faster in boron-doped hydrogenated amorphous silicon than in intrinsic samples, leading to a thicker subsurface layer from the early stages of hydrogen plasma exposure. At longer times, hydrogen plasma leads to the formation of a microcrystalline layer via chemical transport, but there is no evidence for crystallization of the a-Si:H substrate. Moreover, we observe that once the microcrystalline layer is formed, hydrogen diffuses out of the sample

  4. Fabrication of nitrogen-containing diamond-like carbon film by filtered arc deposition as conductive hard-coating film

    Science.gov (United States)

    Iijima, Yushi; Harigai, Toru; Isono, Ryo; Imai, Takahiro; Suda, Yoshiyuki; Takikawa, Hirofumi; Kamiya, Masao; Taki, Makoto; Hasegawa, Yushi; Tsuji, Nobuhiro; Kaneko, Satoru; Kunitsugu, Shinsuke; Habuchi, Hitoe; Kiyohara, Shuji; Ito, Mikio; Yick, Sam; Bendavid, Avi; Martin, Phil

    2018-01-01

    Diamond-like carbon (DLC) films, which are amorphous carbon films, have been used as hard-coating films for protecting the surface of mechanical parts. Nitrogen-containing DLC (N-DLC) films are expected as conductive hard-coating materials. N-DLC films are expected in applications such as protective films for contact pins, which are used in the electrical check process of integrated circuit chips. In this study, N-DLC films are prepared using the T-shaped filtered arc deposition (T-FAD) method, and film properties are investigated. Film hardness and film density decreased when the N content increased in the films because the number of graphite structures in the DLC film increased as the N content increased. These trends are similar to the results of a previous study. The electrical resistivity of N-DLC films changed from 0.26 to 8.8 Ω cm with a change in the nanoindentation hardness from 17 to 27 GPa. The N-DLC films fabricated by the T-FAD method showed high mechanical hardness and low electrical resistivity.

  5. Structure and electronic properties features of amorphous chalhogenide semiconductor films prepared by ion-plasma spraying

    Energy Technology Data Exchange (ETDEWEB)

    Korobova, N., E-mail: korobova3@mail.ru; Timoshenkov, S. [Department of Microelectronics, National Research University of Electronic Technology (MIET), Zelenograd (Russian Federation); Almasov, N.; Prikhodko, O. [al-Farabi Kazakh National University, Almaty (Kazakhstan); Tsendin, K. [Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2014-10-21

    Structure of amorphous chalcogenide semiconductor glassy As-S-Se films, obtained by high-frequency (HF) ion-plasma sputtering has been investigated. It was shown that the length of the atomic structure medium order and local structure were different from the films obtained by thermal vacuum evaporation. Temperature dependence of dark conductivity, as well as the dependence of the spectral transmittance has been studied. Conductivity value was determined at room temperature. Energy activation conductivity and films optical band gap have been calculated. Temperature and field dependence of the drift mobility of charge carriers in the HF As-S-Se films have been shown. Bipolarity of charge carriers drift mobility has been confirmed. Absence of deep traps for electrons in the As{sub 40}Se{sub 30}S{sub 30} spectrum of localized states for films obtained by HF plasma ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As{sub 40}Se{sub 30}S{sub 30} films obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.

  6. Magnetic and Electric Properties of Amorphous Co40Fe40B20 Thin Films

    Directory of Open Access Journals (Sweden)

    Yuan-Tsung Chen

    2012-01-01

    Full Text Available C40Fe40B20 was deposited on a glass substrate to a thickness (tf of between 100 Å and 500 Å. X-ray diffraction patterns (XRD indicate that C40Fe40B20 films are in an amorphous state. The plane-view microstructures and grain size distributions of CoFeB thin films are observed under a high-resolution transmission electron microscope (HRTEM. The thicker CoFeB films have larger grain size distribution than thinner CoFeB films. The saturation magnetization (Ms exhibits a size effect, meaning that Ms increases as tf increases. The magnetic remanence magnetization (Mr of CoFeB thin films are sensitive to thinner CoFeB films, and the refined grain size of thinner CoFeB films can induce ferromagnetic stronger spin exchange-coupling behavior than thicker CoFeB films, resulting in higher remanence. The highest magnetic squareness ratio (Mr/Ms of the CoFeB films occurs at thickness of 100 Å, suggesting the 100 Å of the as-deposited CoFeB film is suitable for magnetic memory application. These results also demonstrate that coercivity (Hc is increased by an increase in the width of the distribution of grain sizes. The electrical resistivity (ρ of such a film is typically higher than normally exceeding 100 μΩ cm, revealing that the amorphous phase dominates. These results are consistent with the XRD results.

  7. 1D - photonic crystals prepared from the amorphous chalcogenide films

    Czech Academy of Sciences Publication Activity Database

    Kohoutek, T.; Orava, J.; Wágner, T.; Hrdlička, M.; Vlček, Milan; Frumar, M.

    2009-01-01

    Roč. 20, - (2009), S346-S350 ISSN 0957-4522. [International Conference of Optical and Optoelectronic Materials and Applications. London, 29.07.2007-03.08.2007] Institutional research plan: CEZ:AV0Z40500505 Keywords : chalcogenide thin films Subject RIV: CA - Inorganic Chemistry Impact factor: 1.020, year: 2009

  8. Electrical and switching properties of InSe amorphous thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kenawy, M.A.; Zayed, H.A.; El-Zahid, H.A. (Univ. Coll. for Girls, Ain Shams Univ., Cairo (Egypt)); El-Shazly, A.F.; Afifi, M.A. (Faculty of Education, Ain Shams Univ., Cairo (Egypt))

    1991-05-15

    In this work electrical and switching properties of InSe thin films have been studied. The semiconductor compound InSe was obtained by direct synthesis from stoichiometric amounts of spectroscopically pure indium and selenium. By slow cooling of the synthesized InSe a polycrystalline material is obtained. The amorphous films were obtained by thermal evaporation under vacuum of the polycrystalline material on glass or pyrographite substrates. From electrical measurements, it was found that for all films the dark electrical resistivity decreases with an increase in film thickness and temperature. The InSe compound exhibits non-linear I-V characteristics and switching phenomena. The threshold voltage decreases with increasing annealing temperature and increases with increasing film thickness. (orig.).

  9. Carbon Film Electrodes For Super Capacitor Applications

    Science.gov (United States)

    Tan, Ming X.

    1999-07-20

    A method for treating an organic polymer material, preferably a vinylidene chloride/vinyl chloride copolymer (Saran) to produce a flat sheet of carbon film material having a high surface area (.apprxeq.1000 m.sup.2 /g) suitable as an electrode material for super capacitor applications. The method comprises heating a vinylidene chloride/vinyl chloride copolymer film disposed between two spaced apart graphite or ceramic plates to a first temperature of about 160.degree. C. for about 14 hours to form a stabilized vinylidene chloride/vinyl chloride polymer film, thereafter heating the stabilized film to a second temperature of about 750.degree. C. in an inert atmosphere for about one hour to form a carbon film; and finally activating the carbon film to increase the surface area by heating the carbon film in an oxidizing atmosphere to a temperature of at least 750-850.degree. C. for between 1-6 hours.

  10. Development of amorphous carbon protective coatings on poly(vinyl)chloride

    International Nuclear Information System (INIS)

    Rangel, Elidiane C.; Souza, Eduardo S. de; Moraes, Francine S. de; Marins, Nazir M.S.; Schreiner, Wido H.; Cruz, Nilson C.

    2010-01-01

    The great versatility of polymers has promoted their application in a series of ordinary situations. The development of specific devices from polymers, however, requires modifications to fit specific stipulations. In this work the surface properties of thin films grown onto polyvinylchloride (PVC) were investigated. Hydrogenated amorphous carbon films were deposited onto commercial PVC plates from acetylene and argon plasmas excited by radiofrequency (13.56 MHz, 70 W) power. The proportion of acetylene in the gas feed was varied against that of argon, keeping the total pressure constant at 2.5 Pa. Deposition time was 1800 s. Film elemental composition was analyzed by X-ray photoelectron spectroscopy, XPS. Water contact angle measurements were performed using the sessile drop technique. The root mean squared roughness was derived from 50 x 50 μm 2 surface topographic images, acquired by scanning probe microscopy. Nanoindentation and pin-on-disk techniques were employed on the determination of film hardness and sliding wear, respectively. Oxidation resistance was obtained through the etching rate of the samples in oxygen radiofrequency (1.3 Pa, 50 W) plasmas. From XPS analysis it was detected oxygen and nitrogen contamination in all the samples. It was also found that sp 3 /sp 2 ratio depends on the proportion of argon in the plasma. At lower argon concentrations, hardness, wear and oxidation resistances were all improved with respect to the uncoated PVC. In such conditions, the surface wettability is low indicating a moderate receptivity to water. This combination of properties, ascribed to a balance between the ion bombardment and deposition processes, is suitable for materials exposed to rigorous weathering conditions.

  11. Colour centres in amorphous tungsten trioxide thin films

    International Nuclear Information System (INIS)

    Kleperis, J.J.; Cikmach, P.D.; Lusis, A.R.

    1984-01-01

    Magnetic, optical, and electrical properties of thin tungsten trioxide (a-WO 3 ) films obtained on substrates with different temperatures and annealed in air and vacuum are investigated. On the basis of these results and recent structural investigations a structure model of the a-WO 3 film is given: a spatial network of tightly bounded clusters which are built from hydrated WO 6 octahedra. These octahedra contain terminal oxygens and being axially distorted they are the sites for localization of injected electrons. The colour centres formed are paramagnetic (ESR signal from W 5+ ) and their optical absorption is satisfactorily described by the intervalence charge transfer between the localized states of W 5+ and W 6+ ions. (author)

  12. Origin of temperature-induced low friction of sputtered Si-containing amorphous carbon coatings

    International Nuclear Information System (INIS)

    Jantschner, O.; Field, S.K.; Holec, D.; Fian, A.; Music, D.; Schneider, J.M.; Zorn, K.; Mitterer, C.

    2015-01-01

    This work reports on a tribological study of magnetron-sputtered silicon-containing amorphous carbon thin films vs. their alumina counterparts. Temperature cycling during ball-on-disk tests in humid air revealed a decrease in the coefficient of friction from 0.3 to <0.02 beyond 240 ± 15 °C. Systematic variation of the environment confirmed oxygen to be responsible for the low friction. X-ray photoelectron spectroscopy of the wear tracks indicates oxidation of Si-C bonds and formation of Si-O-C bonds, followed by further oxidation to SiO 2 above 450 °C. Ab initio molecular dynamics simulations of gas interactions with the a-C surface revealed dissociation of O 2 and the formation of oxides. Additional density functional theory calculations of Si incorporation into a graphene layer, resembling the surface of the film, showed preferential attraction of gaseous species (H, O, -OH, H 2 O), to Si-sites as compared to C-sites. Hence, the temperature- and atmosphere-induced changes in friction coefficient can be understood based on correlative X-ray photoelectron spectroscopy and ab initio data: the formation of Si-O-C bonds stemming from a reaction of the as-deposited coating with atmosphere in the tribological contact is observed by theory and experiment

  13. Gallium-lanthanum-sulphide amorphous thin films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Nemec, P., E-mail: Petr.Nemec@upce.cz [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210 Pardubice (Czech Republic); Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.fr [Equipe Verres et Ceramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Universite de Rennes 1, 35042 Rennes (France); Pavlista, M., E-mail: martin.pavlista@upce.cz [Department of Physics, Faculty of Chemical Technology, University of Pardubice, Studentska 84, 53210 Pardubice (Czech Republic); Moreac, A., E-mail: alain.moreac@univ-rennes1.fr [GMCM, UMR-CNRS 6626, Universite de Rennes 1, 35042 Rennes (France); Frumar, M., E-mail: miloslav.frumar@upce.cz [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210 Pardubice (Czech Republic); Vlcek, M., E-mail: milan.vlcek@upce.cz [Joint Laboratory of Solid State Chemistry of the University of Pardubice and the Institute of Macromolecular Chemistry of Acad. Sci. of the Czech Republic, Studentska 84, 53210 Pardubice (Czech Republic)

    2009-09-15

    Thin amorphous gallium-lanthanum-sulphide films were prepared by pulsed laser deposition method. The prepared layers were characterized in terms of the structure (using Raman scattering spectroscopy), chemical composition (by energy-dispersive X-ray analysis), and optical properties (employing variable angle spectroscopic ellipsometry). Following Raman spectroscopy results, it is supposed that the structure of the bulk glass and corresponding thin films is formed by GaS{sub 4} tetrahedra and LaS{sub 8} structural units. The study of photo- and thermally induced phenomena in prepared amorphous chalcogenides shows photoinduced decrease of refractive index ({approx}1-2%) under cw (473 nm) or pulsed (248 nm) laser irradiation and annealing-induced decrease of refractive index ({approx}2%), respectively.

  14. Photo-expansion in Ge-As-S amorphous film monitored by diital holograpic microscopy and atomic force microscopy

    Czech Academy of Sciences Publication Activity Database

    Knotek, P.; Arseva, D.; Vateva, E.; Tichý, Ladislav

    2009-01-01

    Roč. 11, č. 4 (2009), s. 391-394 ISSN 1454-4164 Institutional research plan: CEZ:AV0Z40500505 Keywords : amorphous chalcogenide films Subject RIV: CA - Inorganic Chemistry Impact factor: 0.433, year: 2009

  15. On the thickness dependence of both the optical band gap and reversible photodarkening in amorphous Ge-Se films.

    Czech Academy of Sciences Publication Activity Database

    Kutálek, P.; Tichý, Ladislav

    2016-01-01

    Roč. 619, 30 November (2016), s. 336-341 ISSN 0040-6090 Institutional support: RVO:61389013 Keywords : amorphous chalcogenides * thin films * optical band gap Subject RIV: CA - Inorganic Chemistry Impact factor: 1.879, year: 2016

  16. Synthesis of amorphous carbon from bio-products by drying method

    Science.gov (United States)

    Pamungkas, Diajeng I.; Haikal, Anas; Baqiya, Malik A.; Cahyono, Yoyok; Darminto

    2018-04-01

    Amorphous carbon (a-C) has extensively been studied in the last two decades due to many superior properties. Amorphous carbon was successfully prepared by carbonization of organic compounds exposed up to 200°C. Organic compounds that used in this research were coconut sap, lontar palm sap and their derivatives. The X-ray diffraction pattern shows that carbonization of organic compounds produce amorphous carbon phase at 2θ =20°. The infrared absorption in the region from 500 to 4000 cm-1 were resolved into several peaks, which were assigned to C-H, C=C, C-O, C=O and O-H. Four point probe method was also used to measure the conductivity and band gap of each material, resulting in 1.73 - 29.6 S/m and 0.08 - 0.49 eV respectively.

  17. Hardness and elastic modulus of amorphous and nanocrystalline SiC and Si films

    Czech Academy of Sciences Publication Activity Database

    Kulykovskyy, Valeriy; Vorlíček, Vladimír; Boháč, Petr; Stranyánek, Martin; Čtvrtlík, Radim; Kurdyumov, A.; Jastrabík, Lubomír

    2008-01-01

    Roč. 202, - (2008), s. 1738-1745 ISSN 0257-8972 R&D Projects: GA MŠk OC 097; GA MŠk OC 095; GA MŠk(CZ) 1M06002 Institutional research plan: CEZ:AV0Z10100522 Keywords : sputtering * hardness * nanocrystalline SiC films * nanocomposites * amorphous Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.860, year: 2008

  18. Pulsed laser deposition of magnetic films by ablation of Co- and Fe-based amorphous alloys

    Czech Academy of Sciences Publication Activity Database

    Caricato, A. P.; Frenández, M.; Frait, Zdeněk; Fraitová, Dagmar; Luby, S.; Luches, A.; Majková, E.; Majni, G.; Malych, Rastislav; Mengucci, P.

    2004-01-01

    Roč. 79, - (2004), s. 1251-1254 ISSN 0947-8396 Grant - others:VEGA(SK) 2/1106/22; VEGA(SK) 2/3149/23; MIUR(IT) Cluster P10-B; HPRN-CT(XE) 1999-00150 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic resonance * thin amorphous films * magnetization damping Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.452, year: 2004

  19. Microhardness studies on thin carbon films grown on P-type, (100) silicon

    Science.gov (United States)

    Kolecki, J. C.

    1982-01-01

    A program to grow thin carbon films and investigate their physical and electrical properties is described. Characteristics of films grown by rf sputtering and vacuum arc deposition on p type, (100) silicon wafers are presented. Microhardness data were obtained from both the films and the silicon via the Vickers diamond indentation technique. These data show that the films are always harder than the silicon, even when the films are thin (of the order of 1000 A). Vacuum arc films were found to contain black carbon inclusions of the order of a few microns in size, and clusters of inclusions of the order of tens of microns. Transmission electron diffraction showed that the films being studied were amorphous in structure.

  20. The effects of plasma-assisted chemical vapor deposition process variables on the properties of amorphous silicon carbide films

    Science.gov (United States)

    Moskowitz, Illa Lorren

    Amorphous hydrogenated carbon films containing silicon are of considerable interest for a variety of applications including window layers for solar cells, anti-abrasion coatings, masks for x-ray photolithography and biomedical applications. Plasma-assisted chemical vapor deposition (PACVD) is one of the preferred techniques for depositing these films. a-Si:C:H films were deposited by PACVD using a plasma reactor with capacitively coupled parallel plate configuration operating at 13.56 MHz. The following film properties were studied: intrinsic stress (from the curvature of the substrates), micro-hardness (obtained from nanoindentation), surface roughness and morphology (studied using atomic force microscopy), surface energy (obtained from wetting angle measurements) and the optical constants of the films (as obtained from computer modeling of ellipsometric data). The composition of the films was established from Rutherford backscattering experiments and the hydrogen content was measured using nuclear reaction analysis. By investigating the process variables of the PACVD system using a 2-level factorial experimental design, a better understanding of this complex deposition process has been gained. From this study some of the relationships between the process variables of the PACVD system and physical characteristics of the deposited films such as surface roughness, film stress and optical properties have been established. For example, increasing the energy of bombarding ions produced an increase in the surface roughness under certain conditions, but produced a decrease in roughness under other conditions. In another case, changing the composition of the source gas produced a significant change in the refractive index of the films when the ion energy was high, but had little effect when the ion energy was low. Values obtained for the surface roughness of the films and the dispersion functions of n and k obtained from the ellipsometric modeling were in general

  1. Effect of low level doping of boron and phosphorus on the properties of amorphous silicon films

    International Nuclear Information System (INIS)

    Tran, N.T.; Epstein, K.A.; Grimmer, D.P.; Vernstrom, G.D.

    1987-01-01

    Effect of the low level doping of boron and phosphorus on the properties of amorphous silicon films (a-Si:H) were studied. Doping level of both boron and phosphorus was in the range of 10/sup 17/ atoms/cm/sup 3/. Apparent improvement in the stability of dark and photoconductivity of a-Si: films upon low level doping does not result from the elimination of light-induced defects. The stability of the dark and photoconductivity upon doping is an indication of pinning of the Fermi level

  2. Nuclear gamma-resonance study of Co-Gd amorphous films

    International Nuclear Information System (INIS)

    Ivanov, O.A.; Kumejshin, V.F.; Vas'kovskij, V.O.; Laletin, E.V.

    1982-01-01

    The gamma-resonance method has been used to study X ray Co-Gd amorphous films of 18 at.% Cd, 76% Co, 6% Fe enriched with 57 Fe up to 4% obtained by cathode high-frequency sputtering. Spectra processing has been computerized by three different programs. Effective field distributions Hsub(eff) at 57 Fe nuclei are obtained. It is shown that at annealings up to 670 K gradual crystallization occurs under conservation of ''chemical disorder''. The Hsub(eff) temperature dependence at resonance nuclei as well as angles between the magnetization vector and a normal to the film after various thermal treatments are determined [ru

  3. Effects of thickness on the statistical properties of the Barkhausen noise in amorphous films

    International Nuclear Information System (INIS)

    Santi, L.; Bohn, F.; Viegas, A.D.C.; Durin, G.; Magni, A.; Bonin, R.; Zapperi, S.; Sommer, R.L.

    2006-01-01

    The statistical properties of the Barkhausen noise (BN) in thin amorphous films are studied as a function of both the nominal composition and the thickness. BN was observed in single films with nominal compositions Fe 73.5 Cu 1 Nb 3 Si 22.5-x B x (with x=4 and 9) in the thickness range 20nm-5μm. The distributions of Barkhausen jump sizes and duration times were obtained and fitted to power laws with critical exponents τ=1.25+/-0.05 and α=1.60+/-0.05, respectively

  4. SHORT RANGE ORDER IN ANNEALED FexSi1-x AMORPHOUS FILMS

    OpenAIRE

    Alameda, J.; Fuertes, J.; Givord, D.; Liènard, A.; Martínez, B.; Moreu, M.; Tejada, J.

    1988-01-01

    Magnetic properties of as-prepared (sputtered) and annealed FexSi1-x (0.64 ≤ x ≤ 0.78) amorphous films deposited at room temperature, are interpreted in terms of chemical short-range order and compared with evaporated films deposited at 77 K. Low temperature (≤ 30 K) magnetization behaviour follows ; M (T) / M (0) = 1 - BT3/2 - CT5/2 with B = 1.5 x 10-2 K-3/2 ; C = -2.610 x-4 K-5/2. Related spin wave stiffness constant is D = 0.9 meV Å2.

  5. Structural, morphological, compositional and optical studies of plasma polymerized 2-furaldehyde amorphous thin films

    Science.gov (United States)

    Kabir, Humayun; Rahman, M. Mahbubur; Uddin, Kabir M.; Bhuiyan, A. H.

    2017-11-01

    Plasma synthesized 2-furaldehyde (PPFDH) amorphous polymer thin films of varying thicknesses were prepared in optimum conditions by a capacitively coupled parallel plate glow discharge reactor at room temperature. The structure, morphology, composition and optical properties of deposited PPFDH thin films have been investigated using X-Ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, Scanning electron microscopy (SEM), Energy dispersive X-Ray spectroscopy (EDS), as well as Ultraviolet-visible (UV-vis) absorption spectroscopy. XRD results confirmed the amorphous nature of the films. The smooth and uniform nature of the PPFDH thin films were observed by SEM images. FTIR analyses of monomer FDH and PPFDH thin films show that structural rearrangement has occurred due to the synthesis process taking place in the chemical structure. IR stretching bands obtained from DFT calculations of the optimized structures of monomer and polymer of 2-furaldehyde are in good agreement with the experimental results. UV-vis absorption spectra in transmittance as well as reflectance mode was utilized to compute absorption coefficient, allowed direct and indirect transition energy gaps, band edge sharpness, Urbach energy, steepness parameter, extinction coefficient, and dispersion and oscillator energy. The oscillator strength, moments of optical spectra, refractive index at infinite wavelength, high frequency dielectric constant, average oscilator strength, complex refractive index, dissipation factor, optical conductivity and skin depth were also determined by using measured UV-vis transmittance and reflectance spectra.

  6. Aluminium-induced crystallization of amorphous silicon films deposited by DC magnetron sputtering on glasses

    International Nuclear Information System (INIS)

    Kezzoula, F.; Hammouda, A.; Kechouane, M.; Simon, P.; Abaidia, S.E.H.; Keffous, A.; Cherfi, R.; Menari, H.; Manseri, A.

    2011-01-01

    Amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) films were deposited by DC magnetron sputtering technique with argon and hydrogen plasma mixture on Al deposited by thermal evaporation on glass substrates. The a-Si/Al and a-Si:H/Al thin films were annealed at different temperatures ranging from 250 to 550 deg. C during 4 h in vacuum-sealed bulb. The effects of annealing temperature on optical, structural and morphological properties of as-grown as well as the vacuum-annealed a-Si/Al and a-Si:H/Al thin films are presented in this contribution. The averaged transmittance of a-Si:H/Al film increases upon increasing the annealing temperature. XRD measurements clearly evidence that crystallization is initiated at 450 deg. C. The number and intensity of diffraction peaks appearing in the diffraction patterns are more important in a-Si:H/Al than that in a-Si/Al layers. Results show that a-Si:H films deposited on Al/glass crystallize above 450 deg. C and present better crystallization than the a-Si layers. The presence of hydrogen induces an improvement of structural properties of poly-Si prepared by aluminium-induced crystallization (AIC).

  7. Oxygen reduction activity of N-doped carbon-based films prepared by pulsed laser deposition

    Science.gov (United States)

    Hakoda, Teruyuki; Yamamoto, Shunya; Kawaguchi, Kazuhiro; Yamaki, Tetsuya; Kobayashi, Tomohiro; Yoshikawa, Masahito

    2010-12-01

    Carbon-based films with nitrogen species on their surface were prepared on a glassy carbon (GC) substrate for application as a non-platinum cathode catalyst for polymer electrolyte fuel cells. Cobalt and carbon were deposited in the presence of N 2 gas using a pulsed laser deposition method and then the metal Co was removed by HCl-washing treatment. Oxygen reduction reaction (ORR) activity was electrochemically determined using a rotating disk electrode system in which the film samples on the GC substrate were replaceable. The ORR activity increased with the temperature of the GC substrate during deposition. A carbon-based film prepared at 600 °C in the presence of N 2 at 66.7 Pa showed the highest ORR activity among the tested samples (0.66 V vs. NHE). This film was composed of amorphous carbons doped with pyridine type nitrogen atoms on its surface.

  8. Tuning the optoelectronic properties of amorphous MoOx films by reactive sputtering

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; Fabrim, Zacarias Eduardo; Ahmadpour, Mehrad

    2015-01-01

    In this letter, we report on the effect of oxygen partial pressure and sputtering power on amorphous DC-sputtered MoOx films. We observe abrupt changes in the optoelectronic properties of the reported films by increasing the oxygen partial pressure from 1.00 ? 10?3 mbar to 1.37 ? 10?3 mbar during...... significantly the microstructure of the studied films. The presence of states within the band gap due to the lack of oxygen is the most probable mechanism for generat- ing a change in electrical conductivity as well as optical absorption in DC-sputtered MoOx. The large tuning range of the optoelectronic...... properties in these films holds strong promise for their implementation in optoelectronic devices....

  9. Characterization of an Amorphous Titanium Oxide Film Deposited onto a Nano-Textured Fluorination Surface

    Directory of Open Access Journals (Sweden)

    Pei-Yu Li

    2016-05-01

    Full Text Available The photocatalytic activity of an amorphous titanium oxide (a-TiOx film was modified using a two-step deposition. The fluorinated base layer with a nano-textured surface prepared by a selective fluorination etching process acted as growth seeds in the subsequent a-TiOx deposition. A nanorod-like microstructure was achievable from the resulting a-TiOx film due to the self-assembled deposition. Compared to the a-TiOx film directly deposited onto the untreated base layer, the rate constant of this fluorinate-free a-TiOx film surface for decomposing methylene blue (MB solution that was employed to assess the film’s photocatalytic activity was markedly increased from 0.0076 min−1 to 0.0267 min−1 as a mechanism for the marked increase in the specific surface area.

  10. Synthesis and characterization of amorphous poly(ethylene oxide)/poly(trimethylene carbonate) polymer blend electrolytes

    International Nuclear Information System (INIS)

    Rodrigues, L.C.; Silva, M.M.; Smith, M.J.

    2012-01-01

    Solid polymer electrolytes (SPEs) have been proposed as substitutes for conventional non-aqueous electrolytes in various electrochemical devices. These promising materials may be of interest in various practical devices including batteries, sensors and electrochromic displays as they can offer high performance in terms of specific energy and specific power (batteries), safe operation, form flexibility in device arquitecture and low manufacturing costs. Many different host polymers have been characterized over the last 30 years, however a relatively un-explored strategy involves the use of interpenetrating blends incorporating two or more polymers. Electrolyte systems based on interpenetrating blends of known host polymers, poly(ethylene oxide) and poly(trimethylene carbonate), doped with lithium perchlorate, were prepared by co-dissolution in acetonitrile. This combination of polymer components results in the formation of a material that may be applicable in batteries and electrochromic devices. The results of characterization of polymer electrolyte systems based on interpenetrating blends of amorphous poly(ethylene oxide) and poly(trimethylene carbonate) host matrices, with lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) as guest salt, are described in this study. Electrolytes with compositions of n between 5 and 15 (where n represents the total number of cation-coordinating units per lithium ion) were obtained as flexible, transparent and free-standing films that were characterized by measurements of conductivity, cyclic voltammetry, differential scanning calorimetry and thermogravimetry.

  11. Structural stability of hydrogenated amorphous carbon overcoats used in heat-assisted magnetic recording investigated by rapid thermal annealing

    KAUST Repository

    Wang, N.

    2013-01-01

    Ultrathin amorphous carbon (a-C) films are extensively used as protective overcoats of magnetic recording media. Increasing demands for even higher storage densities have necessitated the development of new storage technologies, such as heat-assisted magnetic recording (HAMR), which uses laser-assisted heating to record data on high-stability media that can store single bits in extremely small areas (∼1 Tbit/in.2). Because HAMR relies on locally changing the coercivity of the magnetic medium by raising the temperature above the Curie temperature for data to be stored by the magnetic write field, it raises a concern about the structural stability of the ultrathin a-C film. In this study, rapid thermal annealing (RTA) experiments were performed to examine the thermal stability of ultrathin hydrogenated amorphous carbon (a-C:H) films deposited by plasma-enhanced chemical vapor deposition. Structural changes in the a-C:H films caused by RTA were investigated by x-ray photoelectron spectroscopy, Raman spectroscopy, x-ray reflectivity, and conductive atomic force microscopy. The results show that the films exhibit thermal stability up to a maximum temperature in the range of 400-450 °C. Heating above this critical temperature leads to hydrogen depletion and sp 2 clustering. The critical temperature determined by the results of this study represents an upper bound of the temperature rise due to laser heating in HAMR hard-disk drives and the Curie temperature of magnetic materials used in HAMR hard disks. © 2013 American Institute of Physics.

  12. Preparation of self-supporting carbon thin films

    CERN Document Server

    Lommel, B; Kindler, B; Klemm, J; Steiner, J

    2002-01-01

    For heavy-ion beam experiments, self-supporting carbon thin films are needed as targets, stripper foils and as backings (Nucl. Instr. and Meth. A 334 (1993) 69) for materials which cannot be produced self-supporting. Using resistance evaporation under high vacuum, self-supporting carbon foils with a thickness of 5 mu g/cm sup 2 and a diameter of 10 mm, a thickness of 10 mu g/cm sup 2 and a diameter of 50 mm up to a thickness of 50 mu g/cm sup 2 and a diameter of 300 mm can be obtained. Due to the energy impact of the heavy-ion beam, the amorphous carbon is restructured into textured graphite, as was found already by Dollinger et al. (Nucl. Instr. and Meth. A 303 (1991) 79). The discuss the production process as well as the change of the layer structure caused by the energy deposit.

  13. Toward an Understanding of Thin-Film Transistor Performance in Solution-Processed Amorphous Zinc Tin Oxide (ZTO) Thin Films.

    Science.gov (United States)

    Sanctis, Shawn; Koslowski, Nico; Hoffmann, Rudolf; Guhl, Conrad; Erdem, Emre; Weber, Stefan; Schneider, Jörg J

    2017-06-28

    Amorphous zinc tin oxide (ZTO) thin films are accessible by a molecular precursor approach using mononuclear zinc(II) and tin(II) compounds with methoxyiminopropionic acid ligands. Solution processing of two precursor solutions containing a mixture of zinc and tin(II)-methoxyiminopropinato complexes results in the formation of smooth homogeneous thin films, which upon calcination are converted into the desired semiconducting amorphous ZTO thin films. ZTO films integrated within a field-effect transistor (FET) device exhibit an active semiconducting behavior in the temperature range between 250 and 400 °C, giving an increased performance, with mobility values between μ = 0.03 and 5.5 cm 2 /V s, with on/off ratios increasing from 10 5 to 10 8 when going from 250 to 400 °C. Herein, our main emphasis, however, was on an improved understanding of the material transformation pathway from weak to high performance of the semiconductor in a solution-processed FET as a function of the processing temperature. We have correlated this with the chemical composition and defects states within the microstructure of the obtained ZTO thin film via photoelectron spectroscopy (X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy), Auger electron spectroscopy, electron paramagnetic resonance spectroscopy, atomic force microscopy, and photoluminescence investigations. The critical factor observed for the improved performance within this ZTO material could be attributed to a higher tin concentration, wherein the contributions of point defects arising from the tin oxide within the final amorphous ZTO material play the dominant role in governing the transistor performance.

  14. Room temperature photoluminescence spectrum modeling of hydrogenated amorphous silicon carbide thin films by a joint density of tail states approach and its application to plasma deposited hydrogenated amorphous silicon carbide thin films

    International Nuclear Information System (INIS)

    Sel, Kıvanç; Güneş, İbrahim

    2012-01-01

    Room temperature photoluminescence (PL) spectrum of hydrogenated amorphous silicon carbide (a-SiC x :H) thin films was modeled by a joint density of tail states approach. In the frame of these analyses, the density of tail states was defined in terms of empirical Gaussian functions for conduction and valance bands. The PL spectrum was represented in terms of an integral of joint density of states functions and Fermi distribution function. The analyses were performed for various values of energy band gap, Fermi energy and disorder parameter, which is a parameter that represents the width of the energy band tails. Finally, the model was applied to the measured room temperature PL spectra of a-SiC x :H thin films deposited by plasma enhanced chemical vapor deposition system, with various carbon contents, which were determined by X-ray photoelectron spectroscopy measurements. The energy band gap and disorder parameters of the conduction and valance band tails were determined and compared with the optical energies and Urbach energies, obtained by UV–Visible transmittance measurements. As a result of the analyses, it was observed that the proposed model sufficiently represents the room temperature PL spectra of a-SiC x :H thin films. - Highlights: ► Photoluminescence spectra (PL) of the films were modeled. ► In the model, joint density of tail states and Fermi distribution function are used. ► Various values of energy band gap, Fermi energy and disorder parameter are applied. ► The model was applied to the measured PL of the films. ► The proposed model represented the room temperature PL spectrum of the films.

  15. The effect of empirical potential functions on modeling of amorphous carbon using molecular dynamics method

    International Nuclear Information System (INIS)

    Li, Longqiu; Xu, Ming; Song, Wenping; Ovcharenko, Andrey; Zhang, Guangyu; Jia, Ding

    2013-01-01

    Empirical potentials have a strong effect on the hybridization and structure of amorphous carbon and are of great importance in molecular dynamics (MD) simulations. In this work, amorphous carbon at densities ranging from 2.0 to 3.2 g/cm 3 was modeled by a liquid quenching method using Tersoff, 2nd REBO, and ReaxFF empirical potentials. The hybridization, structure and radial distribution function G(r) of carbon atoms were analyzed as a function of the three potentials mentioned above. The ReaxFF potential is capable to model the change of the structure of amorphous carbon and MD results are in a good agreement with experimental results and density function theory (DFT) at low density of 2.6 g/cm 3 and below. The 2nd REBO potential can be used when amorphous carbon has a very low density of 2.4 g/cm 3 and below. Considering the computational efficiency, the Tersoff potential is recommended to model amorphous carbon at a high density of 2.6 g/cm 3 and above. In addition, the influence of the quenching time on the hybridization content obtained with the three potentials is discussed.

  16. Fabrication of amorphous silicon nanoribbons by atomic force microscope tip-induced local oxidation for thin film device applications

    International Nuclear Information System (INIS)

    Pichon, L; Rogel, R; Demami, F

    2010-01-01

    We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as a mask for the elaboration of a thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as a mask during plasma etching of the amorphous layer leading to the formation of a nanoribbon. Such an amorphous silicon nanoribbon is used for the fabrication of the resistor

  17. Physical, Physicochemical, Mechanical, and Structural Characterization of Films Based on Gelatin/Glycerol and Carbon Nanotubes

    OpenAIRE

    Israel Sifuentes-Nieves; Rodolfo Rendón-Villalobos; Antonio Jiménez-Aparicio; Brenda Hildeliza Camacho-Díaz; Gustavo Fidel Gutiérrez López; Javier Solorza-Feria

    2015-01-01

    A new method to prepare glycerol/gelatin based films, by doping the film with carbon nanotubes (CNTs) and sodium dodecyl sulfate (SDS), was proposed. SDS was used to disperse CNTs in gelatin/glycerol films as follows: gelatin/glycerol (GG) incubated with equal concentrations of CNT and SDS; GG with 0.001% w/w CNT/SDS; GG with 0.002% CNT/SDS and GG with 0.004% CNT/SDS. Diffractograms of CNT/SDS /glycerol films showed an amorphous structure, being consistent with thermograms involving temperatu...

  18. Molecular-dynamics simulations of thin polyisoprene films confined between amorphous silica substrates

    International Nuclear Information System (INIS)

    Guseva, D. V.; Komarov, P. V.; Lyulin, Alexey V.

    2014-01-01

    Constant temperature–constant pressure (NpT) molecular-dynamics computer simulations have been carried out for the united-atom model of a non-crosslinked (1,4) cis-polyisoprene (PI) melt confined between two amorphous, fully coordinated silica surfaces. The Lennard-Jones 12-6 potential was implemented to describe the polymer–silica interactions. The thickness H of the produced PI–silica film has been varied in a wide range, 1 g g is the individual PI chain radius of gyration measured under the imposed confinement. After a thorough equilibration, the PI film stratified structure and polymer segmental dynamics have been studied. The chain structure in the middle of the films resembles that in a corresponding bulk, but the polymer-density profile shows a pronounced ordering of the polymer segments in the vicinity of silica surfaces; this ordering disappears toward the film middles. Tremendous slowing down of the polymer segmental dynamics has been observed in the film surface layers, with the segmental relaxation more than 150 times slower as compared to that in a PI bulk. This effect increases with decreasing the polymer-film thickness. The segmental relaxation in the PI film middles shows additional relaxation process which is absent in a PI bulk. Even though there are fast relaxation processes in the film middle, its overall relaxation is slower as compared to that in a bulk sample. The interpretation of the results in terms of polymer glassy bridges has been discussed

  19. Time-resolved reflection and transmission studies of amorphous Ge-Te thin-film crystallization

    Science.gov (United States)

    Libera, M.; Chen, M.

    1993-03-01

    Measurements of the temperature and time dependence of visible diode laser transmission and reflection are combined with transmission electron microscopy (TEM) to study the crystallization of two 75 nm Ge-Te thin films. Near-stoichiometric Ge48Te52 transforms by the rapid growth of crystals through the film thickness followed by 2D growth in the film plane. Changes in film reflection and transmission are directly related to the volume fraction transformed. The optical measurements are interpreted in terms of classical Johnson-Mehl-Avrami kinetics. A Kissinger analysis gives an activation energy for crystallization of 1.7 eV. Isothermal measurements lead to an Avrami exponent of 4.5. The data are modeled using a numerical temperature-dependent expression developed by Greer [Acta Metall. 30, 171 (1982)]. Off-stoichiometric Ge54Te46 films show markedly different crystallization behavior. Transmission and reflection measurements indicate that the transformation proceeds by rapid growth of a crystalline layer at the free surface of the film followed by 1D growth of this layer through the film. The observation is confirmed by TEM imaging and diffraction. This work shows that reflection and transmission measurements can be an effective method for the study of crystallization kinetics of amorphous thin films, particularly when more traditional calorimetric methods cannot be employed.

  20. Direct measurement of free-energy barrier to nucleation of crystallites in amorphous silicon thin films

    Science.gov (United States)

    Shi, Frank G.

    1994-01-01

    A method is introduced to measure the free-energy barrier W(sup *), the activation energy, and activation entropy to nucleation of crystallites in amorphous solids, independent of the energy barrier to growth. The method allows one to determine the temperature dependence of W(sup *), and the effect of the preparation conditions of the initial amorphous phase, the dopants, and the crystallization methds on W(sup *). The method is applied to determine the free-energy barrier to nucleation of crystallites in amorphous silicon (a-Si) thin films. For thermally induced nucleation in a-Si thin films with annealing temperatures in the range of from 824 to 983 K, the free-energy barrier W(sup *) to nucleation of silicon crystals is about 2.0 - 2.1 eV regardless of the preparation conditions of the films. The observation supports the idea that a-Si transforms into an intermediate amorphous state through the structural relaxation prior to the onset of nucleation of crystallites in a-Si. The observation also indicates that the activation entropy may be an insignificant part of the free-energy barrier for the nucleation of crystallites in a-Si. Compared with the free-energy barrier to nucleation of crystallites in undoped a-Si films, a significant reduction is observed in the free-energy barrier to nucleation in Cu-doped a-Si films. For a-Si under irradiation of Xe(2+) at 10(exp 5) eV, the free-energy barrier to ion-induced nucleation of crystallites is shown to be about half of the value associated with thermal-induced nucleation of crystallites in a-Si under the otherwise same conditions, which is much more significant than previously expected. The present method has a general kinetic basis; it thus should be equally applicable to nucleation of crystallites in any amorphous elemental semiconductors and semiconductor alloys, metallic and polymeric glasses, and to nucleation of crystallites in melts and solutions.

  1. Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Oliveira, M. H.; Viana, G. A.; de Lima, M. M.; Cros, A.; Cantarero, A.; Marques, F. C.

    2010-12-01

    Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH4) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

  2. Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Oliveira, M. H. Jr.; Viana, G. A.; Marques, F. C.; Lima, M. M. Jr. de; Cros, A.; Cantarero, A.

    2010-01-01

    Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH 4 ) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectroscopy. It was verified that the structure of the films remains unchanged up to a concentration of Kr of about 1.0 at. %. A slight graphitization of the films occurs for higher concentration. The observed variation in the film structure, optical band gap, stress, and hydrogen concentration were associated mainly with the subplantation process of hydrocarbons radicals, rather than the krypton ion energy.

  3. Thermal conductivity of amorphous and nanocrystalline silicon films prepared by hot-wire chemical-vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jugdersuren, B.; Kearney, B. T.; Queen, D. R.; Metcalf, T. H.; Culbertson, J. C.; Chervin, C. N.; Stroud, R. M.; Nemeth, W.; Wang, Q.; Liu, Xiao

    2017-07-01

    We report 3..omega.. thermal conductivity measurements of amorphous and nanocrystalline silicon thin films from 85 to 300 K prepared by hot-wire chemical-vapor deposition, where the crystallinity of the films is controlled by the hydrogen dilution during growth. The thermal conductivity of the amorphous silicon film is in agreement with several previous reports of amorphous silicon prepared by a variety of deposition techniques. The thermal conductivity of the as-grown nanocrystalline silicon film is 70% higher and increases 35% more after an anneal at 600 degrees C. They all have similarly weak temperature dependence. Structural analysis shows that the as-grown nanocrystalline silicon is approximately 60% crystalline, nanograins and grain boundaries included. The nanograins, averaging 9.1 nm in diameter in the as-grown film, are embedded in an amorphous matrix. The grain size increases to 9.7 nm upon annealing, accompanied by the disappearance of the amorphous phase. We extend the models of grain boundary scattering of phonons with two different non-Debye dispersion relations to explain our result of nanocrystalline silicon, confirming the strong grain size dependence of heat transport for nanocrystalline materials. However, the similarity in thermal conductivity between amorphous and nanocrystalline silicon suggests the heat transport mechanisms in both structures may not be as dissimilar as we currently understand.

  4. Improved p–n heterojunction device performance induced by irradiation in amorphous boron carbide films

    Energy Technology Data Exchange (ETDEWEB)

    Peterson, George [Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68583-0857 (United States); Su, Qing [Nebraska Center for Energy Sciences Research, University of Nebraska-Lincoln, Lincoln, NE 68583-0857 (United States); Wang, Yongqiang [Materials Science and Technology Division, Los Alamos National Laboratory, PO Box 1663, Los Alamos, NM 87545 (United States); Dowben, Peter A. [Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0298 (United States); Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588-0299 (United States); Nastasi, Michael, E-mail: mnastasi2@unl.edu [Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68583-0857 (United States); Nebraska Center for Energy Sciences Research, University of Nebraska-Lincoln, Lincoln, NE 68583-0857 (United States); Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0298 (United States)

    2015-12-15

    Highlights: • Amorphous boron carbide films were grown on n-type silicon creating a heterojunction. • We irradiated the devices with 200 keV alpha particles to varying levels of damage. • We measured the current versus voltage at each level of damage for the device. • The electrical properties improved with moderate amounts of irradiation. • Device failure is due to the fragility of the Si, not the boron carbide film. - Abstract: Amorphous hydrogenated boron carbide films (a-B{sub 10}C{sub 2+x}:H{sub y}) on Si p–n heterojunctions were fabricated utilizing plasma enhanced chemical vapor deposition (PECVD). These devices were found to be robust when irradiated with 200 keV He{sup +} ions. For low doses of irradiation, contrary to most other electrical devices, the electrical performance improved. On the heterojunction I(V) curve, reverse bias leakage current decreased by 3 orders of magnitude, series resistance across the device decreased by 64%, and saturation current due to generation of electron–hole pairs in the depletion region also decreased by an order of magnitude. It is believed that the improvements in the electrical properties of the devices are due to an initial passivation of defects in the a-B{sub 10}C{sub 2+x}:H{sub y} film resulting from electronic energy deposition, breaking bonds and allowing them to reform in a lower energy state, or resolving distorted icosahedron anion states.

  5. Fabrication of Hydrogenated Amorphous Germanium Thin Layer Film and ItsCharacterization

    International Nuclear Information System (INIS)

    Agus-Santoso; Lely-Susita RM; Tjipto-Sujitno

    2000-01-01

    Fabrication of hydrogenated amorphous Germanium thin film by vacuumevaporation method and then deposition with hydrogen atom by glow dischargeplasma radio frequency has been done. This germanium amorphous (a-Ge) thinfilm involves a lot of dangling bonds in the network due to the irregularityof the atomic structures and it will decrease is conductivity. To improve theband properties of (a-Ge) thin film layer a hydrogenated plasma isintroduced. Process of introducing of the hydrogen into the a-Ge film is meanto reduce the dangling bonds so that the best electric conductivity of a Ge:Hthin film will obtained. To identify the hydrogen atom in the sample acharacterization using infrared spectrometer has been done, as well as themeasurement of conductivity of the samples. From the characterization usinginfrared spectroscopy the existence of hydrogen atom was found at absorptionpeak with wave number 1637.5 cm -1 , while the optimum conductivity of thesample 1634.86 Ω -1 cm -1 was achieved at 343 o K. (author)

  6. Novel Transrotational Solid State Order Discovered by TEM in Crystallizing Amorphous Films

    Science.gov (United States)

    Kolosov, Vladimir

    Exotic thin crystals with unexpected transrotational microstructures have been discovered by transmission electron microscopy (TEM) for crystal growth in thin (10-100 nm) amorphous films of different chemical nature (oxides, chalcogenides, metals and alloys) prepared by various methods. Primarily we use our TEM bend contour technique. The unusual phenomenon can be traced in situ in TEM column: dislocation independent regular internal bending of crystal lattice planes in a growing crystal. Such transrotation (unit cell trans lation is complicated by small rotationrealized round an axis lying in the film plane) can result in strong regular lattice orientation gradients (up to 300 degrees per micrometer) of different geometries: cylindrical, ellipsoidal, toroidal, saddle, etc. Transrotation is increasing as the film gets thinner. Transrotational crystal resembles ideal single crystal enclosed in a curved space. Transrotational micro crystals have been eventually recognized by other authors in some vital thin film materials, i.e. PCMs for memory, silicides, SrTiO3. Atomic model and possible mechanisms of the phenomenon are discussed. New transrotational nanocrystalline model of amorphous state is also proposed Support of RF Ministry of Education and Science is acknowledged.

  7. Electrochemical deposition of carbon films on titanium in molten LiCl–KCl–K2CO3

    International Nuclear Information System (INIS)

    Song, Qiushi; Xu, Qian; Wang, Yang; Shang, Xujing; Li, Zaiyuan

    2012-01-01

    Electrodeposition of carbon films on the oxide-scale-coated titanium has been performed in a LiCl–KCl–K 2 CO 3 melt, which are characterized by scanning electron microscopy, Raman spectroscopy and X-ray diffraction analysis. The electrochemical process of carbon deposition is investigated by cyclic voltammetry on the graphite, titanium and oxide-scale-coated titanium electrodes. The particle-size-gradient carbon films over the oxide-scale-coated titanium can be achieved by electrodeposition under the controlled potentials for avoiding codeposition of lithium carbide. The deposited carbon films are comprised of micron-sized ‘quasi-spherical’ carbon particles with graphitized and amorphous phases. The cyclic voltammetry behavior on the graphite, titanium and oxide-scale-coated titanium electrodes shows that CO 3 2− ions are reduced most favorably on the graphite for the three electrodes. Lithium ions can discharge under the less negative potential on the electrode containing carbon compared with titanium electrode because of the formation of lithium carbide from the reaction between lithium and carbon. - Highlights: ► Carbon films are prepared on oxide-scale-coated titanium in a LiCl–KCl–K 2 CO 3 melt. ► The films comprise micron-size ‘quasi-spherical’ carbon particles. ► The films present particle-size-gradient. ► The particles contain graphitized and amorphous phases. ► The prepared carbon films are more electrochemically active than graphite.

  8. Thermal resistances of crystalline and amorphous few-layer oxide thin films

    Directory of Open Access Journals (Sweden)

    Liang Chen

    2017-11-01

    Full Text Available Thermal insulation at nanoscale is of crucial importance for non-volatile memory devices such as phase change memory and memristors. We perform non-equilibrium molecular dynamics simulations to study the effects of interface materials and structures on thermal transport across the few-layer dielectric nanostructures. The thermal resistance across few-layer nanostructures and thermal boundary resistance at interfaces consisting of SiO2/HfO2, SiO2/ZrO2 or SiO2/Al2O3 are obtained for both the crystalline and amorphous structures. Based on the comparison temperature profiles and phonon density of states, we show that the thermal boundary resistances are much larger in crystalline few-layer oxides than the amorphous ones due to the mismatch of phonon density of state between distinct oxide layers. Compared with the bulk SiO2, the increase of thermal resistance across crystalline few-layer oxides results from the thermal boundary resistance while the increase of thermal resistance across amorphous few-layer oxides is attributed to the lower thermal conductivity of the amorphous thin films.

  9. Nano-Impact (Fatigue Characterization of As-Deposited Amorphous Nitinol Thin Film

    Directory of Open Access Journals (Sweden)

    Rehan Ahmed

    2012-08-01

    Full Text Available This paper presents nano-impact (low cycle fatigue behavior of as-deposited amorphous nitinol (TiNi thin film deposited on Si wafer. The nitinol film was 3.5 µm thick and was deposited by the sputtering process. Nano-impact tests were conducted to comprehend the localized fatigue performance and failure modes of thin film using a calibrated nano-indenter NanoTest™, equipped with standard diamond Berkovich and conical indenter in the load range of 0.5 mN to 100 mN. Each nano-impact test was conducted for a total of 1000 fatigue cycles. Depth sensing approach was adapted to understand the mechanisms of film failure. Based on the depth-time data and surface observations of films using atomic force microscope, it is concluded that the shape of the indenter test probe is critical in inducing the localized indentation stress and film failure. The measurement technique proposed in this paper can be used to optimize the design of nitinol thin films.

  10. Transformation from amorphous to nano-crystalline SiC thin films ...

    Indian Academy of Sciences (India)

    Administrator

    Auger electron spectroscopy showed that the carbon incorporation in the film structure was strongly dependent on the gas flow ratio. A similar broad visible room-temperature PL with two peaks was observed for all SiC films. The main PL emission was correlated to the band to band transition in uniform a-SiC phase and the ...

  11. Toward Adequate Operation of Amorphous Oxide Thin-Film Transistors for Low-Concentration Gas Detection.

    Science.gov (United States)

    Kim, Kyung Su; Ahn, Cheol Hyoun; Jung, Sung Hyeon; Cho, Sung Woon; Cho, Hyung Koun

    2018-03-28

    We suggest the use of a thin-film transistor (TFT) composed of amorphous InGaZnO (a-IGZO) as a channel and a sensing layer for low-concentration NO 2 gas detection. Although amorphous oxide layers have a restricted surface area when reacting with NO 2 gas, such TFT sensors have incomparable advantages in the aspects of electrical stability, large-scale uniformity, and the possibility of miniaturization. The a-IGZO thin films do not possess typical reactive sites and grain boundaries, so that the variation in drain current of the TFTs strictly originates from oxidation reaction between channel surface and NO 2 gas. Especially, the sensing data obtained from the variation rate of drain current makes it possible to monitor efficiently and quickly the variation of the NO 2 concentration. Interestingly, we found that enhancement-mode TFT (EM-TFT) allows discrimination of the drain current variation rate at NO 2 concentrations ≤10 ppm, whereas a depletion-mode TFT is adequate for discriminating NO 2 concentrations ≥10 ppm. This discrepancy is attributed to the ratio of charge carriers contributing to gas capture with respect to total carriers. This capacity for the excellent detection of low-concentration NO 2 gas can be realized through (i) three-terminal TFT gas sensors using amorphous oxide, (ii) measurement of the drain current variation rate for high selectivity, and (iii) an EM mode driven by tuning the electrical conductivity of channel layers.

  12. Strong Metal-Support Interaction: Growth of Individual Carbon Nanofibers from Amorphous Carbon Interacting with an Electron Beam

    DEFF Research Database (Denmark)

    Zhang, Wei; Kuhn, Luise Theil

    2013-01-01

    The article discusses the growth behavior of carbon nanofibers (CNFs). It mentions that CNFs can be synthesized using methods such as arc-discharge, laser ablation and chemical vapor deposition. It further states that CNFs can be grown from a physical mixing of amorphous carbon and CGO...

  13. Dielectric breakdown in silica-amorphous polymer nanocomposite films: the role of the polymer matrix.

    Science.gov (United States)

    Grabowski, Christopher A; Fillery, Scott P; Westing, Nicholas M; Chi, Changzai; Meth, Jeffrey S; Durstock, Michael F; Vaia, Richard A

    2013-06-26

    The ultimate energy storage performance of an electrostatic capacitor is determined by the dielectric characteristics of the material separating its conductive electrodes. Polymers are commonly employed due to their processability and high breakdown strength; however, demands for higher energy storage have encouraged investigations of ceramic-polymer composites. Maintaining dielectric strength, and thus minimizing flaw size and heterogeneities, has focused development toward nanocomposite (NC) films; but results lack consistency, potentially due to variations in polymer purity, nanoparticle surface treatments, nanoparticle size, and film morphology. To experimentally establish the dominant factors in broad structure-performance relationships, we compare the dielectric properties for four high-purity amorphous polymer films (polymethyl methacrylate, polystyrene, polyimide, and poly-4-vinylpyridine) incorporating uniformly dispersed silica colloids (up to 45% v/v). Factors known to contribute to premature breakdown-field exclusion and agglomeration-have been mitigated in this experiment to focus on what impact the polymer and polymer-nanoparticle interactions have on breakdown. Our findings indicate that adding colloidal silica to higher breakdown strength amorphous polymers (polymethyl methacrylate and polyimide) causes a reduction in dielectric strength as compared to the neat polymer. Alternatively, low breakdown strength amorphous polymers (poly-4-vinylpyridine and especially polystyrene) with comparable silica dispersion show similar or even improved breakdown strength for 7.5-15% v/v silica. At ∼15% v/v or greater silica content, all the polymer NC films exhibit breakdown at similar electric fields, implying that at these loadings failure becomes independent of polymer matrix and is dominated by silica.

  14. Scaling of anomalous hall effect in amorphous CoFeB Films with accompanying quantum correction

    KAUST Repository

    Zhang, Yan

    2015-05-08

    Scaling of anomalous Hall effect in amorphous CoFeB films with thickness ranging from 2 to 160 nm have been investigated. We have found that the scaling relationship between longitudinal (ρxx) and anomalous Hall (ρAH) resistivity is distinctly different in the Bloch and localization regions. For ultrathin CoFeB films, the sheet resistance (Rxx) and anomalous Hall conductance (GAH) received quantum correction from electron localization showing two different scaling relationships at different temperature regions. In contrast, the thicker films show a metallic conductance, which have only one scaling relationship in the entire temperature range. Furthermore, in the dirty regime of localization regions, an unconventional scaling relationship View the MathML sourceσAH∝σxxα with α=1.99 is found, rather than α=1.60 predicted by the unified theory.

  15. Investigation of the degradation of a thin-film hydrogenated amorphous silicon photovoltaic module

    Energy Technology Data Exchange (ETDEWEB)

    van Dyk, E.E.; Audouard, A.; Meyer, E.L. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Woolard, C.D. [Department of Chemistry, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2007-01-23

    The degradation of a thin-film hydrogenated single-junction amorphous silicon (a-Si:H) photovoltaic (PV) module has been studied. We investigated the different modes of electrical and physical degradation of a-Si:H PV modules by employing a degradation and failure assessment procedure used in conjunction with analytical techniques, including, scanning electron microscopy (SEM) and thermogravimetry. This paper reveals that due to their thickness, thin films are very sensitive to the type of degradation observed. Moreover, this paper deals with the problems associated with the module encapsulant, poly(ethylene-co-vinylacetate) (EVA). The main objective of this study was to establish the influence of outdoor environmental conditions on the performance of a thin-film PV module comprising a-Si:H single-junction cells. (author)

  16. Optical constants and band edge of amorphous zinc oxide thin films

    International Nuclear Information System (INIS)

    Khoshman, Jebreel M.; Kordesch, Martin E.

    2007-01-01

    The optical characteristics of amorphous zinc oxide (a-ZnO) thin films grown by radio frequency reactive magnetron sputtering on various substrates at temperature -8 -0.32, respectively. The band edge of the films on Si (100) and quartz has been determined by spectroscopic ellipsometry (3.39 ± 0.05 eV) and spectrophotometric (3.35 ± 0.05 eV) methods, respectively. From the angle dependence of the p-polarized reflectivity we deduce a Brewster angle of 60.5 deg. Measurement of the polarized optical properties shows a high transmissivity (81%-99%) and low absorptivity (< 5%) in the visible and near infrared regions at different angles of incidence. Also, we found that there was a higher absorptivity for wavelength < 370 nm. This wavelength, ∼ 370 nm, therefore indicated that the band edge for a-ZnO thin films is about 3.35 eV

  17. Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films

    Directory of Open Access Journals (Sweden)

    J. Hernández-Torres

    2016-01-01

    Full Text Available Amorphous carbon nitride films with N/C ratios ranging from 2.24 to 3.26 were deposited by reactive sputtering at room temperature on corning glass, silicon, and quartz as substrates. The average chemical composition of the films was obtained from the semiquantitative energy dispersive spectroscopy analysis. Photoluminescence measurements were performed to determine the optical band gap of the films. The photoluminescence spectra displayed two peaks: one associated with the substrate and the other associated with CNx films located at ≈2.13±0.02 eV. Results show an increase in the optical band gap from 2.11 to 2.15 eV associated with the increase in the N/C ratio. Raman spectroscopy measurements showed a dominant D band. ID/IG ratio reaches a maximum value for N/C ≈ 3.03 when the optical band gap is 2.12 eV. Features observed by the photoluminescence and Raman studies have been associated with the increase in the carbon sp2/sp3 ratio due to presence of high nitrogen content.

  18. Effect of chromium and phosphorus on the physical properties of iron and titanium-based amorphous metallic alloy films

    Science.gov (United States)

    Distefano, S.; Rameshan, R.; Fitzgerald, D. J.

    1991-01-01

    Amorphous iron and titanium-based alloys containing various amounts of chromium, phosphorus, and boron exhibit high corrosion resistance. Some physical properties of Fe and Ti-based metallic alloy films deposited on a glass substrate by a dc-magnetron sputtering technique are reported. The films were characterized using differential scanning calorimetry, stress analysis, SEM, XRD, SIMS, electron microprobe, and potentiodynamic polarization techniques.

  19. Amorphization and recrystallization processes in monocrystalline beta silicon carbide thin films

    International Nuclear Information System (INIS)

    Edmond, J.A.; Withrow, S.P.; Kong, H.S.; Davis, R.F.

    1985-01-01

    Individual, as well as multiple doses of 27 Al + , 31 P + , 28 Si + , and 28 Si + and 12 C + , were implanted into (100) oriented monocrystalline β-SiC films. The critical energy of approx. =16 eV/atom required for the amorphization of β-SiC via implantation of 27 Al + and 31 P + was determined using the TRIM84 computer program for calculation of the damage-energy profiles coupled with the results of RBS/ion channeling analyses. In order to recrystallize amorphized layers created by the individual implantation of all four ion species, thermal annealing at 1600, 1700, or 1800 0 C was employed. Characterization of the recrystallized layers was performed using XTEM. Examples of SPE regrown layers containing precipitates and dislocation loops, highly faulted-microtwinned regions, and random crystallites were observed

  20. Progress of Diamond-like Carbon Films

    Directory of Open Access Journals (Sweden)

    CHEN Qing-yun

    2017-03-01

    Full Text Available Diamond-like carbon(DLC films had many unique and outstanding properties such as high thermal conductivity, high hardness, excellent chemical inertness, low friction coefficients and wear coefficients. The properties and combinations were very promising for heat sink, micro-electromechanical devices, radiation hardening, biomedical devices, automotive industry and other technical applications, more research and a lot of attention were attracted in recent years. The research progress of diamond-like films and the nucleation mechanism of film were summarized, and application prospect of DLC films were demonstrated. The aim of this paper is to provide insights on the research trend of DLC films and the industry applications.

  1. Optical, mechanical and surface properties of amorphous carbonaceous thin films obtained by plasma enhanced chemical vapor deposition and plasma immersion ion implantation and deposition

    Energy Technology Data Exchange (ETDEWEB)

    Turri, Rafael G.; Santos, Ricardo M.; Rangel, Elidiane C.; Cruz, Nilson C. da; Bortoleto, José R.R. [Laboratório de Plasmas Tecnológicos, Universidade Estadual Paulista (UNESP), Av. Três de Marco 511, Alto de Boa Vista, 18087-180, Sorocaba, SP (Brazil); Dias da Silva, José H. [Laboratório de Filmes Semicondutores, Depto. de Física, Faculdade de Ciências, UNESP, Bauru, SP (Brazil); Antonio, César Augusto [Laboratório de Plasmas Tecnológicos, Universidade Estadual Paulista (UNESP), Av. Três de Marco 511, Alto de Boa Vista, 18087-180, Sorocaba, SP (Brazil); Durrant, Steven F., E-mail: steve@sorocaba.unesp.br [Laboratório de Plasmas Tecnológicos, Universidade Estadual Paulista (UNESP), Av. Três de Marco 511, Alto de Boa Vista, 18087-180, Sorocaba, SP (Brazil)

    2013-09-01

    Diverse amorphous hydrogenated carbon-based films (a-C:H, a-C:H:F, a-C:H:N, a-C:H:Cl and a-C:H:Si:O) were obtained by radiofrequency plasma enhanced chemical vapor deposition (PECVD) and plasma immersion ion implantation and deposition (PIIID). The same precursors were used in the production of each pair of each type of film, such as a-C:H, using both PECVD and PIIID. Optical properties, namely the refractive index, n, absorption coefficient, α, and optical gap, E{sub Tauc}, of these films were obtained via transmission spectra in the ultraviolet–visible near-infrared range (wavelengths from 300 to 3300 nm). Film hardness, elastic modulus and stiffness were obtained as a function of depth using nano-indentation. Surface energy values were calculated from liquid drop contact angle data. Film roughness and morphology were assessed using atomic force microscopy (AFM). The PIIID films were usually thinner and possessed higher refractive indices than the PECVD films. Determined refractive indices are consistent with literature values for similar types of films. Values of E{sub Tauc} were increased in the PIIID films compared to the PECVD films. An exception was the a-C:H:Si:O films, for which that obtained by PIIID was thicker and exhibited a decreased E{sub Tauc}. The mechanical properties – hardness, elastic modulus and stiffness – of films produced by PECVD and PIIID generally present small differences. An interesting effect is the increase in the hardness of a-C:H:Cl films from 1.0 to 3.0 GPa when ion implantation is employed. Surface energy correlates well with surface roughness. The implanted films are usually smoother than those obtained by PECVD.

  2. Optical, mechanical and surface properties of amorphous carbonaceous thin films obtained by plasma enhanced chemical vapor deposition and plasma immersion ion implantation and deposition

    International Nuclear Information System (INIS)

    Turri, Rafael G.; Santos, Ricardo M.; Rangel, Elidiane C.; Cruz, Nilson C. da; Bortoleto, José R.R.; Dias da Silva, José H.; Antonio, César Augusto; Durrant, Steven F.

    2013-01-01

    Diverse amorphous hydrogenated carbon-based films (a-C:H, a-C:H:F, a-C:H:N, a-C:H:Cl and a-C:H:Si:O) were obtained by radiofrequency plasma enhanced chemical vapor deposition (PECVD) and plasma immersion ion implantation and deposition (PIIID). The same precursors were used in the production of each pair of each type of film, such as a-C:H, using both PECVD and PIIID. Optical properties, namely the refractive index, n, absorption coefficient, α, and optical gap, E Tauc , of these films were obtained via transmission spectra in the ultraviolet–visible near-infrared range (wavelengths from 300 to 3300 nm). Film hardness, elastic modulus and stiffness were obtained as a function of depth using nano-indentation. Surface energy values were calculated from liquid drop contact angle data. Film roughness and morphology were assessed using atomic force microscopy (AFM). The PIIID films were usually thinner and possessed higher refractive indices than the PECVD films. Determined refractive indices are consistent with literature values for similar types of films. Values of E Tauc were increased in the PIIID films compared to the PECVD films. An exception was the a-C:H:Si:O films, for which that obtained by PIIID was thicker and exhibited a decreased E Tauc . The mechanical properties – hardness, elastic modulus and stiffness – of films produced by PECVD and PIIID generally present small differences. An interesting effect is the increase in the hardness of a-C:H:Cl films from 1.0 to 3.0 GPa when ion implantation is employed. Surface energy correlates well with surface roughness. The implanted films are usually smoother than those obtained by PECVD.

  3. Enhanced Luminescence in an amorphous AlN:Ho thin film by co-doped Gd+3 Cathodoluminescence

    Science.gov (United States)

    Maqbool, Muhammad; Richardson, Hugh; Kordesch, Martin

    2009-03-01

    Sputter deposited thin films of amorphous AlN:Ho (1 at. %) emits in the green (549 nm) region of the visible spectrum under electron excitation. The addition of Gd (1 at. %) in the film enhances the green emission linearly after thermal activation at 900 C for 40 minutes in a nitrogen atmosphere. The luminescence enhancement saturates when the gadolinium concentration reaches four times the holmium concentration.. The optical bandgap of amorphous AlN is about 210 nm, so that the film is transparent in the ultraviolet, allowing us to observe the ultraviolet emission at 313 nm from Gd. No significant quenching of the Gd emission is observed. EDX spectra confirm the increasing concentration of Gd. XRD analysis shows no peaks other than those arising from the Si (111) substrate, confirming that the films are amorphous.

  4. Adjustable optical response of amorphous silicon nanowires integrated with thin films.

    Science.gov (United States)

    Dhindsa, Navneet; Walia, Jaspreet; Pathirane, Minoli; Khodadad, Iman; Wong, William S; Saini, Simarjeet Singh

    2016-04-08

    We experimentally demonstrate a new optical platform by integrating hydrogenated amorphous silicon nanowire arrays with thin films deposited on transparent substrates like glass. A 535 nm thick thin film is anisotropically etched to fabricate vertical nanowire arrays of 100 nm diameter arranged in a square lattice. Adjusting the nanowire length, and consequently the thin film thickness permits the optical properties of this configuration to be tuned for either transmission filter response or enhanced broadband absorption. Vivid structural colors are also achieved in reflection and transmission. The optical properties of the platform are investigated for three different etch depths. Transmission filter response is achieved for a configuration with nanowires on glass without any thin film. Alternatively, integrating thin film with nanowires increases the absorption efficiency by ∼97% compared to the thin film starting layer and by ∼78% over nanowires on glass. The ability to tune the optical response of this material in this fashion makes it a promising platform for high performance photovoltaics, photodetectors and sensors.

  5. Biocompatibility of Hydrogen-Diluted Amorphous Silicon Carbide Thin Films for Artificial Heart Valve Coating

    Science.gov (United States)

    Rizal, Umesh; Swain, Bhabani S.; Rameshbabu, N.; Swain, Bibhu P.

    2018-01-01

    Amorphous silicon carbide (a-SiC:H) thin films were synthesized using trichloromethylsilane by a hot wire chemical vapor deposition process. The deposited films were characterized by Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, x-ray diffraction and x-ray photoelectron spectroscopy to confirm its chemical bonding, structural network and composition of the a-SiC:H films. The optical microscopy images reveal that hydrogen dilution increased the surface roughness and pore density of a-SiC:H thin film. The Raman spectroscopy and FTIR spectra reveal chemical network consisting of Si-Si, C-C and Si-C bonds, respectively. The XRD spectroscopy and Raman spectroscopy indicate a-SiC:H still has short-range order. In addition, in vitro cytotoxicity test ensures the behavior of cell-semiconductor hybrid to monitor the proper coordination. The live-dead assays and MTT assay reveal an increase in green nucleus cell, and cell viability is greater than 88%, respectively, showing non-toxic nature of prepared a-SiC:H film. Moreover, the result indicated by direct contact assay, and cell prefers to adhere and proliferate on a-SiC:H thin films having a positive effect as artificial heart valve coating material.

  6. The microstructures and electrical properties of Y-doped amorphous vanadium oxide thin films

    Science.gov (United States)

    Gu, Deen; Zhou, Xin; Guo, Rui; Wang, Zhihui; Jiang, Yadong

    2017-03-01

    One of promising approaches for further improving the sensitivity of microbolometer arrays with greatly-reduced pixel size is using the thermal-sensitive materials with higher performance. In this paper, Y-doped vanadium oxide (VOx) thin films prepared by a reactively sputtering process exhibit enhanced performance for the microbolometer application compared with frequently-applied VOx thin films. Both undoped and Y-doped VOx thin films are amorphous due to the relatively low deposition temperature. Y-doped VOx thin films exhibit smoother surface morphology than VOx due to the restrained expansion of particles during depositions. Y-doping increases the temperature coefficient of resistivity by over 20% for the doping level of 1.30 at%. The change rate of resistivity, after aging for 72 h, of thin films was reduced from about 15% for undoped VOx to 2% due to the introduction of Y. Moreover, Y-doped VOx thin films have a low 1/f noise level as VOx ones. Y-doping provides an attractive approach for preparing VOx thermal-sensitive materials with enhanced performance for microbolometers.

  7. NITROANILINE FILM-HOLE MODIFIED GLASSY CARBON ...

    African Journals Online (AJOL)

    ABSTRACT. Herein, we report determination of dopamine (DA) at modified glassy carbon electrode (GCE) with a film produced by reduction of diazonium generated from p-nitroaniline (PNA). Pores were created purposely by stripping pre-deposited gold nanoparticles (AuNPs) in the modifier film. The modified electrodes.

  8. Chronological change of electrical resistance in GeCu2Te3 amorphous film induced by surface oxidation

    International Nuclear Information System (INIS)

    Saito, Yuta; Shindo, Satoshi; Sutou, Yuji; Koike, Junichi

    2014-01-01

    Unusual chronological electrical resistance change behavior was investigated for amorphous GeCu 2 Te 3 phase change material. More than a 1 order decrease of electrical resistance was observed in the air even at room temperature. The resistance of the amorphous film gradually increased with increasing temperature and then showed a drop upon crystallization. Such unusual behavior was attributed to the oxidation of the amorphous GeCu 2 Te 3 film. From the compositional depth profile measurement, the GeCu 2 Te 3 film without any capping layer was oxidized in air at room temperature and the formed oxide was mainly composed of germanium oxide. Consequently, a highly-conductive Cu-rich layer was formed in the vicinity of the surface of the film, which reduced the total resistance of the film. The present results could provide insight into the chronological change of electrical resistance in amorphous chalcogenide materials, indicating that not only relaxation of the amorphous, but also a large atomic diffusion contributes to the chronological resistance change. (paper)

  9. Adsorption of bovine serum albumin on amorphous carbon surfaces studied with dip pen nanolithography

    Science.gov (United States)

    Yadav, Pradeep K.; McKavanagh, Fiona; Maguire, Paul D.; Lemoine, Patrick

    2011-10-01

    This article reports the use of dip pen nanolithography (DPN) for the study of adsorption of bovine serum albumin (BSA) proteins on amorphous carbon surfaces; tetrahedral amorphous carbon (t-aC) and silicon doped hydrogenated amorphous carbon (a-C:H:Si). Contact angle study shows that the BSA proteins reduce the contact angle on both carbon materials. We also noticed that the drop volume dependence is consistent with a negative line tension, i.e. due to an attractive protein/surface interaction. The DPN technique was used to write short-spaced (100 nm) BSA line patterns on both samples. We found a line merging effect, stronger in the case of the a-C:H:Si material. We discuss possible contributions from tip blunting, scratching, cross-talk between lever torsion and bending and nano-shaving of the patterns. We conclude that the observed effect is caused in large measure by the diffusion of BSA proteins on the amorphous carbon surfaces. This interpretation of the result is consistent with the contact angle data and AFM force curve analysis indicating larger tip/surface adhesion and spreading for the a-C:H:Si material. We conclude by discussing the advantages and limitations of DPN lithography to study biomolecular adsorption in nanoscale wetting environments.

  10. Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors.

    Science.gov (United States)

    Chen, Hong-Chih; Chang, Ting-Chang; Lai, Wei-Chih; Chen, Guan-Fu; Chen, Bo-Wei; Hung, Yu-Ju; Chang, Kuo-Jui; Cheng, Kai-Chung; Huang, Chen-Shuo; Chen, Kuo-Kuang; Lu, Hsueh-Hsing; Lin, Yu-Hsin

    2018-02-26

    This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

  11. Deposition-temperature dependence of structural anisotropy in amorphous Tb-Fe films

    Science.gov (United States)

    Harris, V. G.; Elam, W. T.; Koon, N. C.; Hellman, F.

    1994-02-01

    The anisotropic local structure in a series of amorphous Tb26Fe74 films deposited at different deposition temperatures and having different magnetic anisotropy energies have been investigated using polarization-dependent extended x-ray-absorption fine-structure measurements. Samples deposited at temperatures >=300 K exhibit anisotropic pair correlations where like atomic pairs are favored in plane and unlike pairs are favored out of plane. Both the anisotropic pair correlations and the perpendicular magnetic anisotropy increase with increasing deposition temperature. In contrast, a sample deposited at 77 K was found to have isotropic pair correlations, low perpendicular magnetic anisotropy, and a large (~=1%) in-plane compression.

  12. Nuclear reaction analysis of hydrogen in amorphous silicon and silicon carbide films

    International Nuclear Information System (INIS)

    Guivarc'h, A.; Le Contellec, M.; Richard, J.; Ligeon, E.; Fontenille, J.; Danielou, R.

    1980-01-01

    The 1 H( 11 B, α)αα nuclear reaction is used to determine the H content and the density of amorphous semiconductor Si 1 -sub(x)Csub(x)H 2 and SiHsub(z) thin films. Rutherford backscattering is used to determine the x values and infrared transmission to study the hydrogen bonds. We have observed a transfer or/and a release of hydrogen under bombardment by various ions and we show that this last effect must be taken into account for a correct determination of the hydrogen content. An attempt is made to correlate the hydrogen release with electronic and nuclear energy losses. (orig.)

  13. Hydrogen in hydrogenated amorphous silicon thick film and its relation to the photoresponse of the film in contact with molybdenum

    International Nuclear Information System (INIS)

    Sridhar, N.; Chung, D.D.L.

    1992-01-01

    This paper reports that hydrogenated amorphous silicon films of thickness 0.5-7 μm on molybdenum substrates were deposited from silane by dc glow discharge and studied by mass spectrometric observation of the evolution of hydrogen upon heating and correlating this information with the photoresponse. The films were found to contain two types of hydrogen, namely weak bonded hydrogen, which evolved at 365 degrees C and was the minority, and strongly bonded hydrogen, which evolved at 460-670 degrees C and was the majority. The proportion of strongly bonded hydrogen increased with increasing film thickness and with increasing substrate temperature during deposition. The total amount of hydrogen increased when the substrate temperature was decreased from 350 to 275 degrees C. The strongly bonded hydrogen resided throughout the thickness of the film, whereas the weakly bonded hydrogen resided near the film surface. The evolution of the strongly bonded hydrogen was diffusion controlled, with an activation energy of 1.6 eV. The strongly bonded hydrogen enhanced the photoresponse, whereas the weakly bonded hydrogen degraded the photoresponse

  14. Tribological behavior and film formation mechanisms of carbon nanopearls

    Science.gov (United States)

    Hunter, Chad Nicholas

    Carbon nanopearls (CNPs) are amorphous carbon spheres that contain concentrically-oriented nanometer-sized graphitic flakes. Because of their spherical shape, size (˜150 nm), and structure consisting of concentrically oriented nano-sized sp2 flakes, CNPs are of interest for tribological applications, in particular for use in solid lubricant coatings. These studies were focused on investigating mechanisms of CNP lubrication, development of methods to deposit CNP onto substrates, synthesizing CNP-gold hybrid films using Matrix Assisted Pulsed Laser Evaporation (MAPLE) and magnetron sputtering, and studying plasmas and other species present during film deposition using an Electrostatic Quadrupole Plasma (EQP) analyzer. CNPs deposited onto silicon using drop casting with methanol showed good lubricating properties in sliding contacts under dry conditions, where a transfer film was created in which morphology changed from nano-sized spheres to micron-sized agglomerates consisting of many highly deformed CNPs in which the nano-sized graphene flakes are sheared from the wrapped layer structure of the CNPs. The morphology of carbon nanopearl films deposited using a MAPLE system equipped with a 248 nm KrF excimer laser source was found to be influenced by multiple factors, including composition of the matrix solvent, laser energy and repetition rate, background pressure, and substrate temperature. The best parameters for depositing CNP films that are disperse, droplet-free and have the maximum amount of material deposited are as follows: toluene matrix, 700 mJ, 1 Hz, 100°C substrate temperature, and unregulated vacuum pressure. During depositions using MAPLE and sputtering in argon, electron ionization of toluene vapor generated from the MAPLE target and charge exchange reactions between toluene vapor and the argon plasma generated by the magnetron caused carbon to be deposited onto the gold sputter target. Thin films deposited under these conditions contained high

  15. Optical properties of silver doped amorphous films of composition Ge28S72 and Ge22Ga6S72

    Czech Academy of Sciences Publication Activity Database

    Bartoš, M.; Wágner, T.; Válková, S.; Pavlišta, M.; Vlček, Milan; Beneš, L.; Frumar, M.

    2011-01-01

    Roč. 13, 11-12 (2011), 1442-1446 ISSN 1454-4164. [Fifth International Conference on Amorphous and Nanostructured Chalcogenides. Magurele - Bucharest, 26.06.2011-01.07.2011] Institutional research plan: CEZ:AV0Z40500505 Keywords : amorphous films * chalcogenides * optical properties Subject RIV: CA - Inorganic Chemistry Impact factor: 0.457, year: 2011 http://joam.inoe.ro/index.php?option=magazine&op=view&idu=2941&catid=68

  16. The diffusion of ion implanted hydrogen in amorphous Si3N4:H films

    Science.gov (United States)

    Schmidt, H.; Gruber, W.; Borchardt, G.; Bruns, M.; Rudolphi, M.; Baumann, H.

    2004-06-01

    The tracer diffusion of hydrogen is studied in amorphous Si3N4:H films which were produced by rf magnetron reactive sputtering. The diffusion experiments were carried out in the temperature range between 700 and 1000 °C with ion implanted deuterium isotopes. Secondary ion mass spectrometry was used for depth profile analysis. While a considerable part of the tracer is immobilized due to the interaction with the implantation damage, the other part migrates freely into the film, wherefrom diffusivities are extracted. These diffusivities coincide with those obtained from a control experiment with a gas exchange technique, demonstrating that the implantation damage has no significant influence on the determination of the correct diffusivities themselves.2H transport can be described by the concept of trap limited diffusion, where the tracer atoms are temporarily trapped by intrinsic film defects, presumably nitrogen dangling bonds. For the present case of a considerably high dissociation rate of trapped hydrogen, effective diffusivities are derived which obey an Arrhenius behaviour with a large activation energy of DgrE = 3.4 eV and a pre-exponential factor of D0 = 5 × 10-4 m2 s-1. The effect on diffusion of pre-annealing the films prior to diffusion in nitrogen and possible structural rearrangements involved, as well as of charging the films with hydrogen up to 2.6 at.%, is analysed.

  17. On the structural and optical properties of sputtered hydrogenated amorphous silicon thin films

    International Nuclear Information System (INIS)

    Barhdadi, A.; Chafik El ldrissi, M.

    2002-08-01

    The present work is essentially focused on the study of optical and structural properties of hydrogenated amorphous silicon thin films (a-Si:H) prepared by radio-frequency cathodic sputtering. We examine separately the influence of hydrogen partial pressure during film deposition, and the effect of post-deposition thermal annealings on the main optical characteristics of the layers such as refraction index, optical gap and Urbach energy. Using the grazing X-rays reflectometry technique, thin film structural properties are examined immediately after films deposition as well as after surface oxidation or annealing. We show that low hydrogen pressures allow a saturation of dangling bonds in the layers, while high doses lead to the creation of new defects. We show also that thermal annealing under moderate temperatures improves the structural quality of the deposited layers. For the films examined just after deposition, the role of hydrogen appears in the increase of their density. For those analysed after a short stay in the ambient, hydrogen plays a protective role against the oxidation of their surfaces. This role disappears for a long time stay in the ambient. (author)

  18. Crystallization study of amorphous sputtered NiTi bi-layer thin film

    Energy Technology Data Exchange (ETDEWEB)

    Mohri, Maryam, E-mail: mmohri@ut.ac.ir [School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany); Nili-Ahmadabadi, Mahmoud [School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Center of Excellence for High Performance Materials, University of Tehran, Tehran (Iran, Islamic Republic of); Chakravadhanula, Venkata Sai Kiran [Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe (Germany)

    2015-05-15

    The crystallization of Ni-rich/NiTiCu bi-layer thin film deposited by magnetron sputtering from two separate alloy targets was investigated. To achieve the shape memory effect, the NiTi thin films deposited at room temperature with amorphous structure were annealed at 773 K for 15, 30, and 60 min for crystallization. Characterization of the films was carried out by differential scanning calorimetry to indicate the crystallization temperature, grazing incidence X-ray diffraction to identify the phase structures, atomic force microscopy to evaluate surface morphology, scanning transmission electron microscopy to study the cross section of the thin films. The results show that the structure of the annealed thin films strongly depends on the temperature and time of the annealing. Crystalline grains nucleated first at the surface and then grew inward to form columnar grains. Furthermore, the crystallization behavior was markedly affected by composition variations. - Highlights: • A developed bi-layer Ni45TiCu5/Ni50.8Ti was deposited on Si substrate and crystallized. • During crystallization, The Ni{sub 45}TiCu{sub 5} layer is thermally less stable than the Ni-rich layer. • The activation energy is 302 and 464 kJ/mol for Cu-rich and Ni-rich layer in bi-layer, respectively.

  19. Domain wall displacements in amorphous films and multilayers studied with a magnetic force microscope

    International Nuclear Information System (INIS)

    Pokhil, T.G.

    1997-01-01

    The magnetic force microscope (MFM) was used to study the displacement of domain walls (DW) in amorphous TbFe alloy films and Co/Pd multilayer films with high spatial resolution. The reversible bending of domain wall segments pinned to defects and irreversible, jumplike displacement of domain wall segments were imaged with the MFM in an applied magnetic field. The maximum reversible displacement of domain walls was 50 endash 100 nm and the length of the segments which reversibly curved in the field was about 150 nm. Measurement of the change in radius of curvature of a DW segment in response to an applied field allowed estimation of the DW energy density and self-demagnetizing field of the film acting on the DW. The DW energy density for the TbFe films was about 1 erg/cm 2 . It was shown that the self-demagnetizing field acting on a domain wall depends on the domain structure surrounding the studied DW segment. For instance, for a film with saturation magnetization 100 G and thickness 80 nm, which exhibited a mazelike domain structure, the demagnetizing field varied from 100 G in the center of a mazelike domain to 400 G near the edge of a domain. The irreversible displacement of a DW was not a continuous process. The 200 endash 400 nm long DW segments exhibited jumplike motion over distances of 100 endash 150 nm. copyright 1997 American Institute of Physics

  20. Nanostructured Diamond-Like Carbon Films Grown by Off-Axis Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Seong Shan Yap

    2015-01-01

    Full Text Available Nanostructured diamond-like carbon (DLC films instead of the ultrasmooth film were obtained by pulsed laser ablation of pyrolytic graphite. Deposition was performed at room temperature in vacuum with substrates placed at off-axis position. The configuration utilized high density plasma plume arriving at low effective angle for the formation of nanostructured DLC. Nanostructures with maximum size of 50 nm were deposited as compared to the ultrasmooth DLC films obtained in a conventional deposition. The Raman spectra of the films confirmed that the films were diamond-like/amorphous in nature. Although grown at an angle, ion energy of >35 eV was obtained at the off-axis position. This was proposed to be responsible for subplantation growth of sp3 hybridized carbon. The condensation of energetic clusters and oblique angle deposition correspondingly gave rise to the formation of nanostructured DLC in this study.

  1. Theoretical investigation of magnetic properties in interfaces of magnetic nanoparticles and amorphous carbons

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Shih-Jye, E-mail: sjs@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Hsu, Hua-Shu [Department of Applied Physics, National Pingtung University, Pingtung 900, Taiwan (China); Ovchinnikov, Sergei [Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036 (Russian Federation); Chen, Guan-Long [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China)

    2017-06-15

    Highlights: • The interfaces of amorphous carbons will be graphited and antiferromagnetic. • The ferromagnetism on the Co interfaces is induced by the medium electrons. • The spin-wave excitation will change between the acoustic and optical modes. • The charge exchange in the interfaces changes the magnetism of the interfaces. - Abstract: Based on the experimental finding of the exchange bias in amorphous carbon samples with embedded Co nanoparticles and on the graphited character of the amorphous carbon interface confirmed by molecular dynamics simulations we have proposed the interface of graphited carbon to be antiferromagnetic. A theoretical model, which comprises the Kondo interactions in the interfaces of Co nanoparticles and the induced antiferromagnetic interactions in the graphited carbons, is employed to evaluate the ferromagnetism of the interfaces of Co nanoparticles. We have shown that the ferromagnetism of interfaces of Co nanoparticles will be enhanced by the increase of antiferromagnetic interaction as well as the increase of electron density in the graphited carbons. In particular, we found that the antiferromagnetic interactions in graphited carbons will change the spin-wave excitation in interfaces of Co nanoparticles from the quasiacoustic mode to the quasioptical one.

  2. Effect of starting point formation on the crystallization of amorphous silicon films by flash lamp annealing

    Science.gov (United States)

    Sato, Daiki; Ohdaira, Keisuke

    2018-04-01

    We succeed in the crystallization of hydrogenated amorphous silicon (a-Si:H) films by flash lamp annealing (FLA) at a low fluence by intentionally creating starting points for the trigger of explosive crystallization (EC). We confirm that a partly thick a-Si part can induce the crystallization of a-Si films. A periodic wavy structure is observed on the surface of polycrystalline silicon (poly-Si) on and near the thick parts, which is a clear indication of the emergence of EC. Creating partly thick a-Si parts can thus be effective for the control of the starting point of crystallization by FLA and can realize the crystallization of a-Si with high reproducibility. We also compare the effects of creating thick parts at the center and along the edge of the substrates, and a thick part along the edge of the substrates leads to the initiation of crystallization at a lower fluence.

  3. Domain wall energy landscapes in amorphous magnetic films with asymmetric arrays of holes

    Energy Technology Data Exchange (ETDEWEB)

    Alija, A; Perez-Junquera, A; RodrIguez-RodrIguez, G; Velez, M; Alameda, J M; MartIn, J I [Depto. Fisica, Fac. Ciencias, Universidad de Oviedo - CINN, Av. Calvo Sotelo s/n, 33007 Oviedo (Spain); Marconi, V I; Kolton, A B; Parrondo, J M R [Depto. Fisica Atomica, Molecular y Nuclear, and GISC, Universidad Complutense, 28040 Madrid (Spain); Anguita, J V [Instituto de Microelectronica de Madrid, CNM-CSIC, Isaac Newton 8, PTM, Tres Cantos, 28760 Madrid (Spain)

    2009-02-21

    Arrays of asymmetric holes have been defined in amorphous Co-Si films by e-beam lithography in order to study domain wall motion across the array subject to the asymmetric pinning potential created by the holes. Experimental results on Kerr effect magnetooptical measurements and hysteresis loops are compared with micromagnetic simulations in films with arrays of triangular holes. These show that the potential asymmetry favours forward wall propagation for flat walls but, if the wall contains a kink, net backward wall propagation is preferred at low fields, in agreement with minor loop experiments. The difference between the fields needed for forward and backward flat wall propagation increases as the size of the triangular holes is reduced, becoming maximum for 1 {mu}m triangles, which is the characteristic length scale set by domain wall width.

  4. Domain wall energy landscapes in amorphous magnetic films with asymmetric arrays of holes

    International Nuclear Information System (INIS)

    Alija, A; Perez-Junquera, A; RodrIguez-RodrIguez, G; Velez, M; Alameda, J M; MartIn, J I; Marconi, V I; Kolton, A B; Parrondo, J M R; Anguita, J V

    2009-01-01

    Arrays of asymmetric holes have been defined in amorphous Co-Si films by e-beam lithography in order to study domain wall motion across the array subject to the asymmetric pinning potential created by the holes. Experimental results on Kerr effect magnetooptical measurements and hysteresis loops are compared with micromagnetic simulations in films with arrays of triangular holes. These show that the potential asymmetry favours forward wall propagation for flat walls but, if the wall contains a kink, net backward wall propagation is preferred at low fields, in agreement with minor loop experiments. The difference between the fields needed for forward and backward flat wall propagation increases as the size of the triangular holes is reduced, becoming maximum for 1 μm triangles, which is the characteristic length scale set by domain wall width.

  5. Determination of local order in the amorphous precursor to Ba-hexaferrite thin-film recording media

    Science.gov (United States)

    Snyder, J. E.; Harris, V. G.; Das, B. N.; Koon, N. C.; Sui, X.; Kryder, M. H.

    1996-04-01

    Ba-hexaferrite thin films for recording media applications are often fabricated by a two-step process: sputter deposition of an amorphous precursor, followed by annealing to crystallize the BaFe12O19 phase. The magnetic anisotropy of the crystalline films can be either in-plane or perpendicular, depending on the sputtering process used in the first step. However, conventional structural characterization techniques have not been able to distinguish between different as-sputtered films. Using polarization-dependent extended x-ray absorption fine structure (PD-EXAFS), we have observed anisotropic local structure around both Ba and Fe atoms in the amorphous precursor films. Comparison of the results suggests that the amorphous films consist of networks of Fe atoms surrounded by their O nearest neighbors, with Ba atoms fitting into in-between spaces as network modifiers (there might also be some minor Fe network modifying contribution). The local structural anisotropy of the amorphous films appears to determine the orientation of the fast-growing basal plane directions during annealing, and thus the directions of the c axes and the magnetic anisotropy.

  6. Citrate effects on amorphous calcium carbonate (ACC) structure, stability, and crystallization

    DEFF Research Database (Denmark)

    Tobler, Dominique Jeanette; Rodriguez Blanco, Juan Diego; Dideriksen, Knud

    2015-01-01

    Understanding the role of citrate in the crystallization kinetics of amorphous calcium carbonate (ACC) is essential to explain the formation mechanisms, stabilities, surface properties, and morphologies of CaCO3 biominerals. It also contributes to deeper insight into fluid-mineral inte...

  7. Total reflection amorphous carbon mirrors for vacuum ultraviolet free electron lasers

    Czech Academy of Sciences Publication Activity Database

    Steeg, B.; Juha, Libor; Feldhaus, J.; Jacobi, S.; Sobierajski, R.; Michaelsen, C.; Andrejczuk, A.; Krzywinski, J.

    2004-01-01

    Roč. 84, č. 5 (2004), s. 657-659 ISSN 0003-6951 R&D Projects: GA MŠk LN00A100 Institutional research plan: CEZ:AV0Z1010921 Keywords : free-electron laser * amorphous carbon * radiation damage Subject RIV: BH - Optics, Masers, Lasers Impact factor: 4.308, year: 2004

  8. Low-Temperature Synthesis of Hierarchical Amorphous Basic Nickel Carbonate Particles for Water Oxidation Catalysis.

    Science.gov (United States)

    Yang, Yisu; Liang, Fengli; Li, Mengran; Rufford, Thomas E; Zhou, Wei; Zhu, Zhonghua

    2015-07-08

    Amorphous nickel carbonate particles are catalysts for the oxygen evolution reaction (OER), which plays a critical role in the electrochemical splitting of water. The amorphous nickel carbonate particles can be prepared at a temperature as low as 60 °C by an evaporation-induced precipitation (EIP) method. The products feature hierarchical pore structures. The mass-normalized activity of the catalysts, measured at an overpotential of 0.35 V, was 55.1 A g(-1) , with a Tafel slope of only 60 mV dec(-1) . This catalytic activity is superior to the performance of crystalline NiOx particles and β-Ni(OH)2 particles, and compares favorably to state-of-the-art RuO2 catalysts. The activity of the amorphous nickel carbonate is remarkably stable during a 10 000 s chronoamperometry test. Further optimization of synthesis parameters reveals that the amorphous structure can be tuned by adjusting the H2 O/Ni ratio in the precursor mixture. These results suggest the potential application of easily prepared hierarchical basic nickel carbonate particles as cheap and robust OER catalysts with high activity. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Hard graphitelike hydrogenated amorphous carbon grown at high rates by a remote plasma

    DEFF Research Database (Denmark)

    Singh, Shailendra Vikram; Zaharia, T.; Creatore, M.

    2010-01-01

    Hydrogenated amorphous carbon (a-C:H) deposited from an Ar-C 2H2 expanding thermal plasma chemical vapor deposition (ETP-CVD) is reported. The downstream plasma region of an ETP is characterized by a low electron temperature (∼0.3 eV), which leads to an ion driven chemistry and negligible physical...

  10. Self-selection in size and structure in argon clusters formed on amorphous carbon

    NARCIS (Netherlands)

    Krainyukova, Nina V.; van de Waal, B.W.

    2004-01-01

    Argon clusters formed on an amorphous carbon substrate as deposited from the vapor phase were studied by means of transmission high energy electron diffraction using the liquid helium cryostat. Electron diffractograms were analysed on the basis of assumption that there exist a cluster size

  11. Damage threshold of amorphous carbon mirror for 177 eV FEL radiation

    NARCIS (Netherlands)

    Dastjani Farahani, Sh.; Chalupsky, Jaromir; Burian, T.; Chapman, Henry; Gleeson, A.J.; Hajkoya, V.; Juha, L.; Jurek, M.; Klinger, Dorota; Sinn, Harald; Sobierajski, R.; Störmer, M.; Tiedtke, K.; Toleikis, S.; Tschentscher, Thomas; Wabnitz, H.; Gaudin, Jerome

    2011-01-01

    We present results of damage studies performed at the Free-Electron LASer in Hamburg (FLASH) on amorphous carbon (a-C). The experiment was performed in the total external reflection geometry representing the working configuration of X-ray mirrors. The 177 eV photon laser beam was focused on a 40 nm

  12. Solid solution or amorphous phase formation in TiZr-based ternary to quinternary multi-principal-element films

    Directory of Open Access Journals (Sweden)

    Mariana Braic

    2014-08-01

    The deposited films exhibited only solid solution (fcc, bcc or hcp or amorphous phases, no intermetallic components being detected. It was found that the hcp structure was stabilized by the presence of Hf or Y, bcc by Nb or Al and fcc by Cu. For the investigated films, the atomic size difference, mixing enthalpy, mixing entropy, Gibbs free energy of mixing and the electronegativity difference for solid solution and amorphous phases were calculated based on Miedema׳s approach of the regular solution model. It was shown that the atomic size difference and the ratio between the Gibbs free energies of mixing of the solid solution and amorphous phases were the most significant parameters controlling the film crystallinity.

  13. Pair distribution functions of amorphous organic thin films from synchrotron X-ray scattering in transmission mode

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Chenyang; Teerakapibal, Rattavut; Yu, Lian; Zhang, Geoff G. Z.

    2017-07-10

    Using high-brilliance high-energy synchrotron X-ray radiation, for the first time the total scattering of a thin organic glass film deposited on a strongly scattering inorganic substrate has been measured in transmission mode. The organic thin film was composed of the weakly scattering pharmaceutical substance indomethacin in the amorphous state. The film was 130 µm thick atop a borosilicate glass substrate of equal thickness. The atomic pair distribution function derived from the thin-film measurement is in excellent agreement with that from bulk measurements. This ability to measure the total scattering of amorphous organic thin films in transmission will enable accuratein situstructural studies for a wide range of materials.

  14. Pair distribution functions of amorphous organic thin films from synchrotron X-ray scattering in transmission mode

    Directory of Open Access Journals (Sweden)

    Chenyang Shi

    2017-09-01

    Full Text Available Using high-brilliance high-energy synchrotron X-ray radiation, for the first time the total scattering of a thin organic glass film deposited on a strongly scattering inorganic substrate has been measured in transmission mode. The organic thin film was composed of the weakly scattering pharmaceutical substance indomethacin in the amorphous state. The film was 130 µm thick atop a borosilicate glass substrate of equal thickness. The atomic pair distribution function derived from the thin-film measurement is in excellent agreement with that from bulk measurements. This ability to measure the total scattering of amorphous organic thin films in transmission will enable accurate in situ structural studies for a wide range of materials.

  15. Electronic Power System Application of Diamond-Like Carbon Films

    Science.gov (United States)

    Wu, Richard L. C.; Kosai, H.; Fries-Carr, S.; Weimer, J.; Freeman, M.; Schwarze, G. E.

    2003-01-01

    A prototype manufacturing technology for producing high volume efficiency and high energy density diamond-like carbon (DLC) capacitors has been developed. Unique dual ion-beam deposition and web-handling systems have been designed and constructed to deposit high quality DLC films simultaneously on both sides of capacitor grade aluminum foil and aluminum-coated polymer films. An optimized process, using inductively coupled RF ion sources, has been used to synthesize electrically robust DLC films. DLC films are amorphous and highly flexible, making them suitable for the production of wound capacitors. DLC capacitors are reliable and stable over a wide range of AC frequencies from 20 Hz to 1 MHz, and over a temperature range from .500 C to 3000 C. The compact DLC capacitors offer at least a 50% decrease in weight and volume and a greater than 50% increase in temperature handling capability over equal value capacitors built with existing technologies. The DLC capacitors will be suitable for high temperature, high voltage, pulsed power and filter applications.

  16. Amorphous calcium carbonate controls avian eggshell mineralization: A new paradigm for understanding rapid eggshell calcification.

    Science.gov (United States)

    Rodríguez-Navarro, Alejandro B; Marie, Pauline; Nys, Yves; Hincke, Maxwell T; Gautron, Joel

    2015-06-01

    Avian eggshell mineralization is the fastest biogenic calcification process known in nature. How this is achieved while producing a highly crystalline material composed of large calcite columnar single crystals remains largely unknown. Here we report that eggshell mineral originates from the accumulation of flat disk-shaped amorphous calcium carbonate (ACC) particles on specific organic sites on the eggshell membrane, which are rich in proteins and sulfated proteoglycans. These structures known as mammillary cores promote the nucleation and stabilization of a amorphous calcium carbonate with calcitic short range order which predetermine the calcite composition of the mature eggshell. The amorphous nature of the precursor phase was confirmed by the diffuse scattering of X-rays and electrons. The nascent calcitic short-range order of this transient mineral phase was revealed by infrared spectroscopy and HRTEM. The ACC mineral deposited around the mammillary core sites progressively transforms directly into calcite crystals without the occurrence of any intermediate phase. Ionic speciation data suggest that the uterine fluid is equilibrated with amorphous calcium carbonate, throughout the duration of eggshell mineralization process, supporting that this mineral phase is constantly forming at the shell mineralization front. On the other hand, the transient amorphous calcium carbonate mineral deposits, as well as the calcite crystals into which they are converted, form by the ordered aggregation of nanoparticles that support the rapid mineralization of the eggshell. The results of this study alter our current understanding of avian eggshell calcification and provide new insights into the genesis and formation of calcium carbonate biominerals in vertebrates. Copyright © 2015 Elsevier Inc. All rights reserved.

  17. Iron nanoparticles embedded in carbon films: structural and optical properties

    Science.gov (United States)

    Mashayekhi, Fatemeh; Shafiekhani, Azizollah; Sebt, Seyed Ali

    2016-06-01

    In the present work amorphous hydrogenated carbon films with sputtered iron nanoparticles (Fe NPs @ a-C:H) were deposited by co-deposition of RF-sputtering and RF-plasma enhanced chemical vapor deposition methods using acetylene gas and iron target on quartz and silicon substrates. Samples were prepared in different initial pressures and during constant deposition time. The crystalline structure of Fe NPs @ a-C:H was studied using X-ray diffraction and selected area electron diffraction patterns. The X-ray photoelectron spectroscopy analysis presents that increasing the initial pressure decreases the atomic ratio of Fe/C and the sp3-hybridized carbon content in prepared samples. The transmission electron microscope image shows the encapsulated Fe NPs in carbon films. The optical properties and localized surface plasmon resonance (LSPR) of samples were studied using UV-visible spectrophotometry, which is shown that increasing of Fe content decreases the intensity of LSPR peak and increases the optical band gap.

  18. Effects of Atomic-Scale Structure on the Fracture Properties of Amorphous Carbon - Carbon Nanotube Composites

    Science.gov (United States)

    Jensen, Benjamin D.; Wise, Kristopher E.; Odegard, Gregory M.

    2015-01-01

    The fracture of carbon materials is a complex process, the understanding of which is critical to the development of next generation high performance materials. While quantum mechanical (QM) calculations are the most accurate way to model fracture, the fracture behavior of many carbon-based composite engineering materials, such as carbon nanotube (CNT) composites, is a multi-scale process that occurs on time and length scales beyond the practical limitations of QM methods. The Reax Force Field (ReaxFF) is capable of predicting mechanical properties involving strong deformation, bond breaking and bond formation in the classical molecular dynamics framework. This has been achieved by adding to the potential energy function a bond-order term that varies continuously with distance. The use of an empirical bond order potential, such as ReaxFF, enables the simulation of failure in molecular systems that are several orders of magnitude larger than would be possible in QM techniques. In this work, the fracture behavior of an amorphous carbon (AC) matrix reinforced with CNTs was modeled using molecular dynamics with the ReaxFF reactive forcefield. Care was taken to select the appropriate simulation parameters, which can be different from those required when using traditional fixed-bond force fields. The effect of CNT arrangement was investigated with three systems: a single-wall nanotube (SWNT) array, a multi-wall nanotube (MWNT) array, and a SWNT bundle system. For each arrangement, covalent bonds are added between the CNTs and AC, with crosslink fractions ranging from 0-25% of the interfacial CNT atoms. The SWNT and MWNT array systems represent ideal cases with evenly spaced CNTs; the SWNT bundle system represents a more realistic case because, in practice, van der Waals interactions lead to the agglomeration of CNTs into bundles. The simulation results will serve as guidance in setting experimental processing conditions to optimize the mechanical properties of CNT

  19. The magnetic properties of amorphous and nanocrystalline cobalt-rare earth films

    Science.gov (United States)

    Thomas, Richard Allen

    Magnetic materials are of great technological importance for their use in transformers, electric motors, computer disks and hard drives, etc. Understanding the intrinsic physical properties of magnetic materials is essential in order to develop new and better materials for these applications. Presented here is a study of the magnetic properties of amorphous and nanocrystalline cobalt-rare earth (Co-R, where R = Y, Pr, Gd, and Dy) films composed of very small crystalline grains, about 2--200 nm in size. The films are produced by co-sputtering two single element targets onto a single substrate. Many are then annealed briefly to produce magnetic films composed of nanoscale crystallites. The magnetic properties of these films depend largely on the relative strengths of the exchange interaction, which tends to align the spins within a group of crystallites, and the magnetocrystalline anisotropy, which tends to align the spins within each crystallite to an easy direction defined by the crystal lattice. The ratio of these two competing interactions varies strongly with grain size as predicted by the random magnetic anisotropy model. The coercivity, remanent magnetization, initial magnetization, etc., are discussed in light of the predictions made by the models of Callen et al (1977), Chi and Alben (1977), Chudnovsky (1986), and Fukunaga and Inoue (1992).

  20. Deposition and microstructure of Ti-containing diamond-like carbon nanocomposite films

    International Nuclear Information System (INIS)

    Yang, Won Jae; Sekino, Tohru; Shim, Kwang Bo; Niihara, Koichi; Auh, Keun Ho

    2005-01-01

    Ti-containing diamond-like carbon (DLC) films were deposited by plasma decomposition of CH 4 /Ar gas mixtures with an introduction of tetrakis(dimethylamino)titanium (TDMAT, Ti[(CH 3 ) 2 N] 4 ), which was used as a precursor of titanium. The films deposited were found to be nanocomposite coatings consisting of TiN nanocrystalline clusters and amorphous hydrocarbon (a-C:H), indicating that the nanocrystalline clusters were embedded in the DLC matrix. The crystallinity of TiN clusters, as well as the Ti atomic concentrations in the films, increased with an increase of substrate temperature. The substrate temperature applied to form a crystalline phase in the DLC matrix induced a graphitization of amorphous hydrocarbon matrix. The increase of volume fraction of TiN nanocrystalline clusters in the DLC matrix enhanced the mechanical properties of nanostructured coatings, although the graphite-like structural transition of DLC matrix happened due to the applied heating

  1. Sea Urchin Spine Calcite Forms via a Transient Amorphous Calcium Carbonate Phase

    Science.gov (United States)

    Politi, Yael; Arad, Talmon; Klein, Eugenia; Weiner, Steve; Addadi, Lia

    2004-11-01

    The skeletons of adult echinoderms comprise large single crystals of calcite with smooth convoluted fenestrated morphologies, raising many questions about how they form. By using water etching, infrared spectroscopy, electron diffraction, and environmental scanning electron microscopy, we show that sea urchin spine regeneration proceeds via the initial deposition of amorphous calcium carbonate. Because most echinoderms produce the same type of skeletal material, they probably all use this same mechanism. Deposition of transient amorphous phases as a strategy for producing single crystals with complex morphology may have interesting implications for the development of sophisticated materials.

  2. Production of amorphous hydrated impure magnesium carbonate through ex situ carbonation

    International Nuclear Information System (INIS)

    Orlando, Andrea; Lelli, Matteo; Marini, Luigi

    2012-01-01

    The evaluation of the feasibility of ex situ carbonation in landfills utilizing raw natural substances (namely serpentinites as Mg-source and the CO 2 -rich fraction of biogas as C-source) was tested through a laboratory procedure comprising three steps. The first step is the acid attack of a serpentinite at 70 °C, by means of HCl 2 M, to get MgCl 2 -rich solutions. Attacks of different durations were performed to evaluate the time needed. The second step is the neutralization of the MgCl 2 -rich solution by addition of concentrated ammonia. The third (carbonation) step is mixing of the neutralized MgCl 2 -rich solution with a solution of ammonium carbonate. This was produced in a landfill by absorption of CO 2 contained in biogas in a solution of ammonia. The neutralization of acid MgCl 2 -rich solutions caused the precipitation of ferrihydrite with secondary ammonium carnallite and salammoniac, whereas abundant precipitation of Amorphous Hydrated Impure Magnesium Carbonate (AHIMC), sometimes with minor nesquehonite, occurred in the third step. This solid carbonate acts as a stable CO 2 sink up to 380 °C. The geochemical behavior of some minor elements was also investigated during the experimental processes revealing that Al, Cr and Ni were removed during neutralization (second step), in contrast to Ca which remained in the circumneutral MgCl 2 -rich solution and entered into the structure of AHIMC. During the carbonation step, precipitation of artinite, hydromagnesite, lansfordite, magnesite and nesquehonite was thermodynamically impossible as the aqueous phase was undersaturated with respect to these solid phases upon separation of AHIMC. The CO 2 sequestered through this multi-step procedure is 0.34 ton for 1 ton of serpentinite utilized. However, despite that the use of Mg-rich silicates is a suitable approach to ex situ carbonation, due to their huge availability worldwide, the CO 2 produced in making the chemicals and the overall energy balance of the

  3. Effect of high magnetic field on structure and magnetic properties of evaporated crystalline and amorphous Fe-Sm thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Guojian [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); School of Metallurgy, Northeastern University, Shenyang 110819 (China); Li, Mengmeng; Wang, Jianhao; Du, Jiaojiao; Wang, Kai [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); Wang, Qiang, E-mail: wangq@mail.neu.edu.cn [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); School of Metallurgy, Northeastern University, Shenyang 110819 (China)

    2017-02-01

    Crystalline and amorphous Fe-Sm thin films have been fabricated by using molecular beam vapor deposition method. Then, the effects of both variation of Sm content and application of high magnetic field during film growth on the structure and magnetic properties of the Fe-Sm films have been explored. The results show that bcc structure of the Fe-Sm films with 5.8% Sm transforms to amorphization with 33.0% Sm. Meanwhile, nanocrystallite is formed in the amorphous Fe-Sm films. However, no Fe-Sm compound exists with the change of Sm content and with the application of high magnetic field. Nevertheless, high magnetic field decreases interplanar spacing. The structural evolution has a significant effect on magnetic properties. Saturation magnetization decreases 290% from 1456 emu/cm{sup 3} to 373 emu/cm{sup 3} with the increase of Sm content from 5.8% to 33.0%. The coercivity increases 1225% from 20 Oe to 265 Oe. Meanwhile, both the saturation magnetization and coercivity of the films decrease with the application of high magnetic field. The reason has been discussed. - Highlights: • Bcc structure of Fe-Sm film with 5.8% Sm transforms to amorphization with 33.0% Sm. • M{sub S} decreases 290% to 373 emu/cm{sup 3} with increasing Sm content from 5.8% to 33.0%. • Coercivity increases 1225% to 265 Oe when bcc structure transforms to amorphization. • Both M{sub S} and coercivity are decreased with the application of high magnetic field.

  4. Nanofrictional behavior of amorphous, polycrystalline and textured Y-Cr-O films

    Energy Technology Data Exchange (ETDEWEB)

    Gervacio-Arciniega, J.J. [Centro de Nanociencias y Nanotecnología (CNyN), Universidad Nacional Autónoma de México (UNAM), km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, B.C. (Mexico); Flores-Ruiz, F.J., E-mail: fcojfloresr@gmail.com [Centro de Nanociencias y Nanotecnología (CNyN), Universidad Nacional Autónoma de México (UNAM), km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, B.C. (Mexico); Diliegros-Godines, C.J. [Centro de Nanociencias y Nanotecnología (CNyN), Universidad Nacional Autónoma de México (UNAM), km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, B.C. (Mexico); Broitman, E. [Thin Film Physics Division, IFM, Linköping University, SE-58183 Linköping (Sweden); Enriquez-Flores, C.I.; Espinoza-Beltrán, F.J. [CINVESTAV Unidad Querétaro, Lib. Norponiente 2000, Real de Juriquilla, 76230 Querétaro, Qro. (Mexico); Siqueiros, J.; Cruz, M.P. [Centro de Nanociencias y Nanotecnología (CNyN), Universidad Nacional Autónoma de México (UNAM), km. 107, Carretera Tijuana-Ensenada, 22860 Ensenada, B.C. (Mexico)

    2016-08-15

    Highlights: • Friction coefficient (μ) of ferroelectric textured and polycrystalline YCrO{sub 3} films. • A simple method to evaluate μ from a single AFM image is presented. • The AFM-cantilever spring constant was determined from its dynamic response. • Polycrystalline and amorphous films have a lower μ than textured samples. - Abstract: Differences in friction coefficients (μ) of ferroelectric YCrO{sub 3}, textured and polycrystalline films, and non-ferroelectric Y-Cr-O films are analyzed. The friction coefficient was evaluated by atomic force microscopy using a simple quantitative procedure where the dependence of friction force with the applied load is obtained in only one topographical image. A simple code was developed with the MATLAB{sup ®} software to analyze the experimental data. The code includes a correction of the hysteresis in the forward and backward scanning directions. The quantification of load exerted on the sample surface was obtained by finite element analysis of the AFM cantilever starting from its experimental dynamic information. The results show that the ferroelectric YCrO{sub 3} film deposited on a Pt(150 nm)/TiO{sub 2}(30 nm)/SiO{sub 2}/Si (100) substrate is polycrystalline and has a lower friction coefficient than the deposited on SrTiO{sub 3} (110), which is highly textured. From a viewpoint of industrial application in ferroelectric memories, where the writing process is electrical or mechanically achieved by sliding AFM tips on the sample, polycrystalline YCrO{sub 3} films seem to be the best candidates due to their lower μ.

  5. Nanofrictional behavior of amorphous, polycrystalline and textured Y-Cr-O films

    International Nuclear Information System (INIS)

    Gervacio-Arciniega, J.J.; Flores-Ruiz, F.J.; Diliegros-Godines, C.J.; Broitman, E.; Enriquez-Flores, C.I.; Espinoza-Beltrán, F.J.; Siqueiros, J.; Cruz, M.P.

    2016-01-01

    Highlights: • Friction coefficient (μ) of ferroelectric textured and polycrystalline YCrO 3 films. • A simple method to evaluate μ from a single AFM image is presented. • The AFM-cantilever spring constant was determined from its dynamic response. • Polycrystalline and amorphous films have a lower μ than textured samples. - Abstract: Differences in friction coefficients (μ) of ferroelectric YCrO 3 , textured and polycrystalline films, and non-ferroelectric Y-Cr-O films are analyzed. The friction coefficient was evaluated by atomic force microscopy using a simple quantitative procedure where the dependence of friction force with the applied load is obtained in only one topographical image. A simple code was developed with the MATLAB ® software to analyze the experimental data. The code includes a correction of the hysteresis in the forward and backward scanning directions. The quantification of load exerted on the sample surface was obtained by finite element analysis of the AFM cantilever starting from its experimental dynamic information. The results show that the ferroelectric YCrO 3 film deposited on a Pt(150 nm)/TiO 2 (30 nm)/SiO 2 /Si (100) substrate is polycrystalline and has a lower friction coefficient than the deposited on SrTiO 3 (110), which is highly textured. From a viewpoint of industrial application in ferroelectric memories, where the writing process is electrical or mechanically achieved by sliding AFM tips on the sample, polycrystalline YCrO 3 films seem to be the best candidates due to their lower μ.

  6. Films of Carbon Nanomaterials for Transparent Conductors

    Directory of Open Access Journals (Sweden)

    Jun Wei

    2013-05-01

    Full Text Available The demand for transparent conductors is expected to grow rapidly as electronic devices, such as touch screens, displays, solid state lighting and photovoltaics become ubiquitous in our lives. Doped metal oxides, especially indium tin oxide, are the commonly used materials for transparent conductors. As there are some drawbacks to this class of materials, exploration of alternative materials has been conducted. There is an interest in films of carbon nanomaterials such as, carbon nanotubes and graphene as they exhibit outstanding properties. This article reviews the synthesis and assembly of these films and their post-treatment. These processes determine the film performance and understanding of this platform will be useful for future work to improve the film performance.

  7. Electromagnetic characteristics of carbon nanotube film materials

    Directory of Open Access Journals (Sweden)

    Zhang Wei

    2015-08-01

    Full Text Available Carbon nanotube (CNT possesses remarkable electrical conductivity, which shows great potential for the application as electromagnetic shielding material. This paper aims to characterize the electromagnetic parameters of a high CNT loading film by using waveguide method. The effects of layer number of CNT laminate, CNT alignment and resin impregnation on the electromagnetic characteristics were analyzed. It is shown that CNT film exhibits anisotropic electromagnetic characteristic. Pristine CNT film shows higher real part of complex permittivity, conductivity and shielding effectiveness when the polarized direction of incident wave is perpendicular to the winding direction of CNT film. For the CNT film laminates, complex permittivity increases with increasing layer number, and correspondingly, shielding effectiveness decreases. The five-layer CNT film shows extraordinary shielding performance with shielding effectiveness ranging from 67 dB to 78 dB in X-band. Stretching process induces the alignment of CNTs. When aligned direction of CNTs is parallel to the electric field, CNT film shows negative permittivity and higher conductivity. Moreover, resin impregnation into CNT film leads to the decrease of conductivity and shielding effectiveness. This research will contribute to the structural design for the application of CNT film as electromagnetic shielding materials.

  8. Thermal and Non-thermal Physiochemical Processes in Nanoscale Films of Amorphous Solid Water

    International Nuclear Information System (INIS)

    Smith, R. Scott; Petrik, Nikolay G.; Kimmel, Gregory A.; Kay, Bruce D.

    2012-01-01

    Amorphous solid water (ASW) is a metastable form of water created by vapor deposition onto a cold substrate (typically less than 130 K). Since this unusual form of water only exists on earth in laboratories with highly specialized equipment, it is fair to ask why there is any interest in studying this esoteric material. Much of the scientific interest involves using ASW as a model system to explore the physical and reactive properties of liquid water and aqueous solutions. Other researchers are interested in ASW because it is believed to be the predominate form of water in the extreme cold temperatures found in many astrophysical and planetary environments. In addition, ASW is a convenient model system for studying the stability of metastable systems (glasses) and the properties of highly porous materials. A fundamental understanding of such properties has applications in a diverse range of disciplines including cryobiology, food science, pharmaceuticals, astrophysics and nuclear waste storage among others.There exist several excellent reviews on the properties of ASW and supercooled liquid water and a new comprehensive review is beyond the scope of this Account. Instead, we focus on our research over the past 15 years using molecular beams and surface science techniques to probe the thermal and non thermal properties of nanoscale films of ASW. We use molecular beams to precisely control the deposition conditions (flux, incident, energy, incident angle) to create compositionally-tailored, nanoscale films of ASW at low temperatures. To study the transport properties (viscosity, diffusivity), the amorphous films can be heated above their glass transition temperatures, Tg, at which time they transform into deeply supercooled liquids prior to crystallization. The advantage of this approach is that at temperatures near Tg the viscosity is approximately 15 orders of magnitude larger than a normal liquid, and therefore the crystallization kinetics are dramatically slowed

  9. Rethinking Coal: Thin Films of Solution Processed Natural Carbon Nanoparticles for Electronic Devices.

    Science.gov (United States)

    Keller, Brent D; Ferralis, Nicola; Grossman, Jeffrey C

    2016-05-11

    Disordered carbon materials, both amorphous and with long-range order, have been used in a variety of applications, from conductive additives and contact materials to transistors and photovoltaics. Here we show a flexible solution-based method of preparing thin films with tunable electrical properties from suspensions of ball-milled coals following centrifugation. The as-prepared films retain the rich carbon chemistry of the starting coals with conductivities ranging over orders of magnitude, and thermal treatment of the resulting films further tunes the electrical conductivity in excess of 7 orders of magnitude. Optical absorption measurements demonstrate tunable optical gaps from 0 to 1.8 eV. Through low-temperature conductivity measurements and Raman spectroscopy, we demonstrate that variable range hopping controls the electrical properties in as-prepared and thermally treated films and that annealing increases the sp(2) content, localization length, and disorder. The measured hopping energies demonstrate electronic properties similar to amorphous carbon materials and reduced graphene oxide. Finally, Joule heating devices were fabricated from coal-based films, and temperatures as high as 285 °C with excellent stability were achieved.

  10. Demonstration of thin film pair distribution function analysis (tfPDF for the study of local structure in amorphous and crystalline thin films

    Directory of Open Access Journals (Sweden)

    Kirsten M. Ø. Jensen

    2015-09-01

    Full Text Available By means of normal-incidence, high-flux and high-energy X-rays, total scattering data for pair distribution function (PDF analysis have been obtained from thin films (tf, suitable for local structure analysis. By using amorphous substrates as support for the films, the standard Rapid Acquisition PDF setup can be applied and the scattering signal from the film can be isolated from the total scattering data through subtraction of an independently measured background signal. No angular corrections to the data are needed, as would be the case for grazing incidence measurements. The `tfPDF' method is illustrated through studies of as-deposited (i.e. amorphous and crystalline FeSb3 films, where the local structure analysis gives insight into the stabilization of the metastable skutterudite FeSb3 phase. The films were prepared by depositing ultra-thin alternating layers of Fe and Sb, which interdiffuse and after annealing crystallize to form the FeSb3 structure. The tfPDF data show that the amorphous precursor phase consists of corner-sharing FeSb6 octahedra with motifs highly resembling the local structure in crystalline FeSb3. Analysis of the amorphous structure allows the prediction of whether the final crystalline product will form the FeSb3 phase with or without excess Sb present. The study thus illustrates how analysis of the local structure in amorphous precursor films can help to understand crystallization processes of metastable phases and opens for a range of new local structure studies of thin films.

  11. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ambrosio, R., E-mail: rambrosi@uacj.mx [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Moreno, M.; Torres, A. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Carrillo, A. [Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, UACJ, C.J., Chihuahua (Mexico); Vivaldo, I.; Cosme, I. [Instituto Nacional de Astrofísica, Óptica y Electrónica, INAOE, Puebla (Mexico); Heredia, A. [Universidad Popular Autónoma del Estado de Puebla, Puebla (Mexico)

    2015-09-15

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σ{sub dark} changed by 5 order of magnitude under illumination, V{sub d} was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH{sub 4}, H{sub 2}, Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σ{sub RT}), activation energy (E{sub a}), and optical band gap (E{sub g}). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications.

  12. Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

    International Nuclear Information System (INIS)

    Ambrosio, R.; Moreno, M.; Torres, A.; Carrillo, A.; Vivaldo, I.; Cosme, I.; Heredia, A.

    2015-01-01

    Highlights: • Nanostructured silicon thin films were deposited by PECVD. • Polymorphous and microcrystalline were obtained varying the pressure and power. • Structural and optoelectronics properties were studied. • The σ dark changed by 5 order of magnitude under illumination, V d was at 2.5 A/s. • The evidence of embedded nanocrystals into the amorphous matrix was investigated. - Abstract: Amorphous silicon thin films with embedded nanocrystals and microcrystalline silicon were deposited by the standard Radio Frequency (RF) Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, from SiH 4 , H 2 , Ar gas mixture at substrate temperature of 200 °C. Two series of films were produced varying deposition parameters as chamber pressure and RF power density. The chemical bonding in the films was characterized by Fourier transform infrared spectroscopy, where it was observed a correlation between the hydrogen content and the morphological and electrical properties in the films. Electrical and optical parameters were extracted in both series of films, as room temperature conductivity (σ RT ), activation energy (E a ), and optical band gap (E g ). As well, structural analysis in the films was performed by Raman spectroscopy and Atomic Force Microscopy (AFM), which gives an indication of the films crystallinity. The photoconductivity changed in a range of 2 and 6 orders of magnitude from dark to AM 1.5 illumination conditions, which is of interest for thin film solar cells applications

  13. Ultra low nanowear in novel chromium/amorphous chromium carbide nanocomposite films

    Science.gov (United States)

    Yate, Luis; Martínez-de-Olcoz, Leyre; Esteve, Joan; Lousa, Arturo

    2017-10-01

    In this work, we report the first observation of novel nanocomposite thin films consisting of nanocrystalline chromium embedded in an amorphous chromium carbide matrix (nc-Cr/a-CrC) with relatively high hardness (∼22,3 GPa) and ultra low nanowear. The films were deposited onto silicon substrates using a magnetic filtered cathodic arc deposition system at various negative bias voltages, from 50 to 450 V. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) suggested the co-existence of chromium and chromium carbide phases, while high resolution transmission electron microscopy (HRTEM) confirmed the presence of the nc-Cr/a-CrC structure. The friction coefficient measured with the ball-on disk technique and the nanowear results showed a strong correlation between the macro and nano-tribological properties of the samples. These novel nanocomposite films show promising properties as solid lubricant and wear resistant coatings with relatively high hardness, low friction coefficient and ultra low nanowear.

  14. Anisotropic imprint of amorphization and phase separation in manganite thin films via laser interference irradiation

    KAUST Repository

    Ding, Junfeng

    2014-09-16

    Materials with mesoscopic structural and electronic phase separation, either inherent from synthesis or created via external means, are known to exhibit functionalities absent in the homogeneous counterparts. One of the most notable examples is the colossal magnetoresistance discovered in mixed-valence manganites, where the coexistence of nano-to micrometer-sized phase-separated domains dictates the magnetotransport. However, it remains challenging to pattern and process such materials into predesigned structures and devices. In this work, a direct laser interference irradiation (LII) method is employed to produce periodic stripes in thin films of a prototypical phase-separated manganite Pr0.65(Ca0.75Sr0.25)0.35MnO3 (PCSMO). LII induces selective structural amorphization within the crystalline PCSMO matrix, forming arrays with dimensions commensurate with the laser wavelength. Furthermore, because the length scale of LII modification is compatible to that of phase separation in PCSMO, three orders of magnitude of increase in magnetoresistance and significant in-plane transport anisotropy are observed in treated PCSMO thin films. Our results show that LII is a rapid, cost-effective and contamination-free technique to tailor and improve the physical properties of manganite thin films, and it is promising to be generalized to other functional materials.

  15. Influence of thermal heating on diamond-like carbon film properties prepared by filtered cathodic arc

    International Nuclear Information System (INIS)

    Khamnualthong, N.; Siangchaew, K.; Limsuwan, P.

    2013-01-01

    Tetrahedral amorphous diamond-like carbon (ta-DLC) films were deposited on magnetic recording heads using the filtered cathodic arc method. The deposited film thickness was on the order of several nanometers. The DLC films were then annealed to 100 °C–300 °C for 30 and 60 min, and the structure of the ta-DLC films was investigated using Raman spectroscopy, where the gross changes were observed in the Raman D and G peaks. Detailed interpretation concluded that there was sp 2 clustering as a function of temperature, and there was no sp 3 -to-sp 2 conversion after heating up to 300 °C. Furthermore, X-ray photoelectron spectroscopy suggested that oxidation of both the ta-DLC film and the adhesion layer occurs at 300 °C. Additionally, more film wear was observed with heating as measured by a nanoindenter. - Highlights: • Tetrahedral-amorphous diamond-like carbon (ta-DLC) by filtered cathodic arc • ta-DLC used in magnetic recording head as head overcoat • ta-DLC thickness range of less than 2 nm • ta-DLC property dependence on heating • Temperature effect range of up to 300 °C

  16. Synthesis and characterization of boron carbon nitride thin films as protective overcoat for hard disk drives

    Science.gov (United States)

    Chen, Yanfeng

    The current goal in the magnetic storage industry is to reach the areal density of 1Tbit/in2 in a few years. This requires the head-media spacing (HMS), which includes media overcoat, lubricant layer, air bearing, and head overcoat, not to exceed 5.0 nm. Trade-off between these layers results in requiring the protective overcoat to be 1.0 nm or less. The protective overcoat must be hard, wear-resistant, continuous, thermally stable, and compatible with the magnetic layer and lubricant. This thesis work is mainly to develop protective overcoat for ultra high density hard disk drives (HDD). Amorphous carbon nitride (a-CNx) thin films were synthesized using pulseDC magnetron sputtering. The influence of substrate bias, substrate tilt, and substrate rotation on film growth and properties was studied. X-ray reflectivity (XRR) was used to measure film density, roughness and thickness. Surface roughness and thickness measurements from XRR are comparable to AFM and surface profiler measurements respectively. a-CNx films have good mechanical properties. Auger electron spectroscopy (AES) and high resolution transmission microscope (HRTEM) were used to obtain the film composition and microstructure. HRTEM cross sectioned experiments showed that CN x film is amorphous. Chemical corrosion experiments display drastic decrease of corrosion spots for thin films synthesized under optimum conditions. In pursuit of new materials for hard disk drive protective overcoat, boron carbide (B4C) and boron carbon nitride (BxC yNz) thin films were synthesized by pulse-DC magnetron sputtering. Effects of target power, target pulse frequency, substrate bias and pulse frequency on surface roughness were studied by AFM. Nitrogen incorporation into B4C films, which gives BxCyNz thin films, has a beneficial effect to decrease the film roughness. Auger electron spectroscopy was used to characterize the film composition. High-resolution cross-sectioned TEM studies showed that both films are amorphous

  17. Temperature dependent thermal conductivity and transition mechanism in amorphous and crystalline Sb2Te3 thin films.

    Science.gov (United States)

    Li, Qisong; Wei, Jingsong; Sun, Hao; Zhang, Kui; Huang, Zhengxing; Zhang, Long

    2017-10-23

    Sb 2 Te 3 thin films are widely used in high density optical and electronic storage, high-resolution greyscale image recording, and laser thermal lithography. Thermal conductivity and its temperature dependence are critical factors that affect the application performance of thin films. This work aims to evaluate the temperature dependence of thermal conductivity of crystalline and amorphous Sb 2 Te 3 thin films experimentally and theoretically, and explores into the corresponding mechanism of heat transport. For crystalline Sb 2 Te 3 thin films, the thermal conductivity was found to be 0.35 ± 0.035 W m -1 K -1 and showed weak temperature dependence. The thermal conductivity of amorphous Sb 2 Te 3 thin films at temperatures below ~450 K is about 0.23 ± 0.023 W m -1 K -1 , mainly arising from the lattice as the electronic contribution is negligible; at temperatures above 450 K, the thermal conductivity experiences an abrupt increase owing to the structural change from amorphous to crystalline state. The work can provide an important guide and reference to the real applications of Sb 2 Te 3 thin films.

  18. Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties

    International Nuclear Information System (INIS)

    Lee, Su-Jae; Hwang, Chi-Sun; Pi, Jae-Eun; Yang, Jong-Heon; Oh, Himchan; Cho, Sung Haeng; Cho, Kyoung-Ik; Chu, Hye Yong

    2014-01-01

    Multilayered ZnO-SnO 2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO 2 oxides target, and their structural and field effect electronic transport properties were investigated as a function of the thickness of the ZnO and SnO 2 layers. The films have an amorphous multilayered heterostructure composed of the periodic stacking of the ZnO and SnO 2 layers. The field effect electronic properties of amorphous multilayered ZnO-SnO 2 heterostructure thin film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO 2 layers. The highest electron mobility of 37 cm 2 /V s, a low subthreshold swing of a 0.19 V/decade, a threshold voltage of 0.13 V, and a high drain current on-to-off ratio of ∼10 10 obtained for the amorphous multilayered ZnO(1.5 nm)-SnO 2 (1.5 nm) heterostructure TFTs. These results are presumed to be due to the unique electronic structure of an amorphous multilayered ZnO-SnO 2 heterostructure film consisting of ZnO, SnO 2 , and ZnO-SnO 2 interface layers

  19. Thin-film amorphous silicon germanium solar cells with p-and n-type hydrogenated silicon oxide layers

    NARCIS (Netherlands)

    Si, F.T.; Isabella, O.; Zeman, M.

    2017-01-01

    Mixed-phase hydrogenated silicon oxide (SiOx:H) is applied to thin-film hydrogenated amorphous silicon germanium (a-SiGe:H) solar cells serving as both p-doped and n-doped layers. The bandgap of p-SiOx:H is adjusted to achieve a highly-transparent window layer while also providing a strong electric

  20. Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors

    NARCIS (Netherlands)

    Nag, M.; Muller, R.; Steudel, S.; Smout, S.; Bhoolokam, A.; Myny, K.; Schols, S.; Genoe, J.; Cobb, B.; Kumar, A.; Gelinck, G.; Fukui, Y.; Groeseneken, G.; Heremans, P.

    2015-01-01

    We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at

  1. Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

    Directory of Open Access Journals (Sweden)

    Haiting Xie

    2017-10-01

    Full Text Available The nitrogen-doped amorphous oxide semiconductor (AOS thinfilm transistors (TFTs with double-stacked channel layers (DSCL were prepared and characterized. The DSCL structure was composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N and gave the corresponding TFT devices large field-effect mobility due to the presence of double conduction channels. The a-IZO:N/a-IGZO:N TFTs, in particular, showed even better electrical performance (µFE = 15.0 cm2・V−1・s−1, SS = 0.5 V/dec, VTH = 1.5 V, ION/IOFF = 1.1 × 108 and stability (VTH shift of 1.5, −0.5 and −2.5 V for positive bias-stress, negative bias-stress, and thermal stress tests, respectively than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, we assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might explain the better behavior of the corresponding TFTs.

  2. Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films.

    Science.gov (United States)

    Shang, Jie; Xue, Wuhong; Ji, Zhenghui; Liu, Gang; Niu, Xuhong; Yi, Xiaohui; Pan, Liang; Zhan, Qingfeng; Xu, Xiao-Hong; Li, Run-Wei

    2017-06-01

    Flexible and transparent resistive switching memories are highly desired for the construction of portable and even wearable electronics. Upon optimization of the microstructure wherein an amorphous-nanocrystalline hafnium oxide thin film is fabricated, an all-oxide based transparent RRAM device with stable resistive switching behavior that can withstand a mechanical tensile stress of up to 2.12% is obtained. It is demonstrated that the superior electrical, thermal and mechanical performance of the ITO/HfO x /ITO device can be ascribed to the formation of pseudo-straight metallic hafnium conductive filaments in the switching layer, and is only limited by the choice of electrode materials. When the ITO bottom electrode is replaced with platinum metal, the mechanical failure threshold of the device can be further extended.

  3. CFA Films in Amorphous Substrate: Structural Phase Induction and Magnetization Dynamics

    Science.gov (United States)

    Correa, M. A.; Bohn, F.; Escobar, V. M.

    We report a systematic study of the structural and quasi-static magnetic properties, as well as of the dynamic magnetic response through MI effect, in Co2FeAl and MgO//Co2FeAl single layers and a MgO//Co2FeAl/Ag/Co2FeAl trilayered film, all grown onto an amorphous substrate. We present a new route to induce the crystalline structure in the Co2FeAl alloy and verify that changes in the structural phase of this material leads to remarkable modifications of the magnetic anisotropy and, consequently, dynamic magnetic behavior. Considering the electrical and magnetic properties of the Co2FeAl, our results open new possibilities for technological applications of this full-Heusler alloy in rigid and flexible spintronic devices.

  4. Optical, electrical and the related parameters of amorphous Ge-Bi-Se thin films

    International Nuclear Information System (INIS)

    El-Korashy, A.; El-Kabany, N.; El-Zahed, H.

    2005-01-01

    The related optical and electrical parameters of amorphous Ge-Bi-Se thin films were studied. The dependence of optical and electrical properties on the Bi content was observed in most compositions. At Bi >10at% the behavior show a switch from p to n type conduction mechanism. The correlation between the optical band gap E g and the average heats of atomization H s were observed. The results indicated that both the number of topological constant N con and the radial and angular N α , N β valence force constants exhibit the same trend with increasing Bi content. On the other hand, the mean bond energy increases with increasing Bi content to x=15at%. It may be concluded that is a function of the mean coordination number N co , the type of bonds, the degree of cross-linking and the band energy forming the network

  5. Low-temperature properties and localization effects in amorphous thin films of W-Re

    International Nuclear Information System (INIS)

    Raffy, H.; Laibowitz, R.B.

    1984-01-01

    W-Re amorphous films have been prepared with thicknesses ranging from 30 to 1000 A and with the concentration of Re between 30 and 70 at. %. The influence of thickness and related atomic disorder on the superconducting and transport properties has been studied. In particular, both the decrease of the superconducting transition temperature with increasing R/sub D'Alembertian/ and the low-field magnetoresistance are adequately described by the relevant theories of Maekawa and Fukuyama and Larkin based on the localization effect. We have also shown that the W-Re system is dominated by a strong spin-orbit effect and that e-e interaction effects are responsible for the low-temperature logarithmic increase of the resistance for low-T/sub c/ samples

  6. Acoustically induced optical second harmonic generation in hydrogenated amorphous silicon films

    CERN Document Server

    Ebothe, J; Cabarrocas, P R I; Godet, C; Equer, B

    2003-01-01

    Acoustically induced second harmonic generation (AISHG) in hydrogenated amorphous silicon (a-Si : H) films of different morphology has been observed. We have found that with increasing acoustical power, the optical SHG of Gd : YAB laser light (lambda = 2.03 mu m) increases and reaches its maximum value at an acoustical power density of about 2.10 W cm sup - sup 2. With decreasing temperature, the AISHG signal strongly increases below 48 K and correlates well with the temperature behaviour of differential scanning calorimetry indicating near-surface temperature phase transition. The AISHG maxima were observed at acoustical frequencies of 10-11, 14-16, 20-22 and 23-26 kHz. The independently performed measurements of the acoustically induced IR spectra have shown that the origin of the observed phenomenon is the acoustically induced electron-phonon anharmonicity in samples of different morphology.

  7. Coercivity of domain wall motion in thin films of amorphous rare earth-transition metal alloys

    Science.gov (United States)

    Mansuripur, M.; Giles, R. C.; Patterson, G.

    1991-01-01

    Computer simulations of a two dimensional lattice of magnetic dipoles are performed on the Connection Machine. The lattice is a discrete model for thin films of amorphous rare-earth transition metal alloys, which have application as the storage media in erasable optical data storage systems. In these simulations, the dipoles follow the dynamic Landau-Lifshitz-Gilbert equation under the influence of an effective field arising from local anisotropy, near-neighbor exchange, classical dipole-dipole interactions, and an externally applied field. Various sources of coercivity, such as defects and/or inhomogeneities in the lattice, are introduced and the subsequent motion of domain walls in response to external fields is investigated.

  8. Modification of amorphous bright chromium deposited (ABCD) films by nitrogen ion implantation

    International Nuclear Information System (INIS)

    Ferber, H.; Hoflund, G.B.; Mount, C.K.; Hoshino, Shigeo

    1991-01-01

    The hardness of amorphous bright chromium deposited (ABCD) layers can be increased by annealing or N ion implantation. In this study the N ion implantation parameters which influence hardness have been systematically examined. These parameters include sample pretreatment, ion beam energy and total dose. The properties of the resulting films have been characterized using Auger electron spectroscopy coupled with ion sputtering depth profiling, X-ray photoelectron spectroscopy and Knoop microhardness measurements. Auger depth profiles suggest the formation of a stoichiometric CrN subsurface layer after implantation of high N doses (>8x10 17 N/cm 2 ). With higher doses this layer broadens toward the surface and N retention values decrease rapidly. Implanting at elevated temperatures increases the retained N, causes N to migrate more deeply into the bulk, and yields high hardness values. (orig.)

  9. Study of SEY degradation of amorphous carbon coatings

    CERN Document Server

    Bundaleski, N.; Santos, A.; Teodoro, O.M.N.D.; Silva, A.G.

    2013-04-22

    Deposition of low secondary electron yield (SEY) carbon coatings by magnetron sputtering onto the inner walls of the accelerator seems to be the most promising solution for suppressing the electron cloud problem. However, these coatings change their electron emission properties during long term exposure to air. The ageing process of carbon coated samples with initial SEY of about 0.9 received from CERN is studied as a function of exposure to different environments. It is shown that samples having the same initial SEY may age with different rates. The SEY increase can be correlated with the surface concentration of oxygen. Annealing of samples in air at 100-200 {\\deg}C reduces the ageing rate and even recovers previously degraded samples. The result of annealing is reduction of the hydrogen content in the coatings by triggering its surface segregation followed by desorption.

  10. Carbon and nitrogen co-doping self-assembled MoS{sub 2} multilayer films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiaoqin [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou 730050 (China); Xu, Jiao; Chai, Liqiang [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); He, Tengfei [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou 730050 (China); Yu, Fucheng [School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou 730050 (China); Wang, Peng, E-mail: pengwang@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

    2017-06-01

    Highlights: • Mo–S–C–N composite films were synthesized by using reactive magnetron sputtering. • A self-assembled multilayer structure with periodicity in the nanometer scale was formed in the composite film. • The hardness of Mo–S–C–N film deposited at optimized parameter reaches up to 9.76 GPa. • The wear rate of deposited Mo–S–C–N film both in vacuum and ambient atmosphere decreases dramatically. - Abstract: Mo–S–C–N composite films were prepared using reactive magnetron sputtering of graphite and MoS{sub 2} targets in argon and nitrogen atmospheres. The effects of carbon/nitrogen co-doping and carbon concentration on the composition, microstructure, mechanical and tribological properties of deposited films have been investigated by various characterization techniques. The results show that the deposited films comprise MoS{sub 2} nanocrystalline and amorphous carbon, and the incorporating nitrogen forms Mo-N and C–N chemical bonds. Increasing carbon concentration leads to the increase of sp{sup 2} carbon fraction in the films. Furthermore, the high-resolution transmission electron microscopy reveals that a self-assembled multilayer structure with periodicity in the nanometer scale is formed in the Mo–S–C–N film. Benefiting from the composite and self-assembled multilayer structures, the hardness of Mo–S–C–N film deposited at optimized parameter reaches up to 9.76 GPa, and corresponding friction experiment indicates that this composite films display low friction coefficient and high wear resistance both in vacuum and ambient air conditions.

  11. In Situ Mechanical Property Measurements of Amorphous Carbon-Boron Nitride Nanotube Nanostructures

    Science.gov (United States)

    Kim, Jae-Woo; Lin, Yi; Nunez, Jennifer Carpena; Siochi, Emilie J.; Wise, Kristopher E.; Connell, John W.; Smith, Michael W.

    2011-01-01

    To understand the mechanical properties of amorphous carbon (a-C)/boron nitride nanotube (BNNT) nanostructures, in situ mechanical tests are conducted inside a transmission electron microscope equipped with an integrated atomic force microscope system. The nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation. We demonstrate multiple in situ tensile, compressive, and lap shear tests with a-C/BNNT hybrid nanostructures. The tensile strength of the a-C/BNNT hybrid nanostructure is 5.29 GPa with about 90 vol% of a-C. The tensile strength and strain of the end-to-end joint structure with a-C welding is 0.8 GPa and 5.2% whereas the lap shear strength of the side-by-side joint structure with a-C is 0.25 GPa.

  12. Luminescence and Thermal Annealing of Sputtered Deposited - and Samarium-Doped Amorphous AlN Films

    Science.gov (United States)

    Maqbool, Muhammad

    Thin films of thulium- and samarium-doped AlN are deposited on silicon (111) substrates at 77 K by RF magnetron sputtering method. 200-400 nm thick films are grown at 100-200 watts RF power and 5-8 mTorr nitrogen, using a metal target of Al with Tm and Sm separately. X-rays diffraction results show that films are amorphous. Cathodoluminescence studies are performed at room temperature and two dominant peaks are observed in Tm at 467 nm from 1D2 → 3F4 transition and 480 nm from 1G4 to the ground state 3H6 transition. Other peaks in the visible region are obtained at 650 nm and 685 nm due to 1G4 → 3F4 and 1D2 → 3H4 transitions. Peaks in the ultraviolet and infrared region are also obtained at 371 nm and 802 nm as a result from 1D2 → 3H6 and 3H4 → 3H6 transition, respectively. Sm gives four peaks at 564 nm, 600 nm, 648 nm and 707 nm as a result of 4G5/2 → 6H5/2, 4G5/2 → 6H7/2, 4G5/2 → 6H9/2 and 4G5/2 → 6H11/2 transitions. Films are thermally annealed at 1200 K for half an hour in a nitrogen atmosphere. Thermal annealing enhances the intensity of luminescence.

  13. NITROANILINE FILM-HOLE MODIFIED GLASSY CARBON ...

    African Journals Online (AJOL)

    The result showed that PNA film-hole modified GCE has a good stability and long life. Table 1. Comparison of the analytical performance of the proposed dopamine sensor with previously reported dopamine sensors. Sensor. Method LOD (µM). Ref. Co(II) complex and multi-walled carbon nanotubes modified GCE. Amp.

  14. Nanoporous-carbon films for microsensor preconcentrators

    Science.gov (United States)

    Siegal, M. P.; Overmyer, D. L.; Kottenstette, R. J.; Tallant, D. R.; Yelton, W. G.

    2002-05-01

    Nanoporous-carbon (NPC) films are grown using physical processes such as low-power pulsed-laser deposition with attenuation of the ablated carbon species kinetic energy attained by using an inert background gas. With room-temperature growth and negligible residual stress, NPC can coat nearly any substrate to any desired thickness. Control of the deposition energetics yields precise morphology, density, and hence, porosity, with no discernable variation in chemical bonding. We produce NPC films 8 μm thick with density <0.2 g/cm3. The well-controlled porosity, i.e., available surface area, is demonstrated by using films with different thicknesses as a preconcentrator for a nerve-gas simulant.

  15. Experimental Investigation of Multipacting Suppression by amorphous Carbon Coatings

    CERN Document Server

    Holz, Michael

    The presence of electron cloud is considered as the most important limitation concerning the quality of the particle beam in the accelerators, especially with respect to the forthcoming LHC luminosity upgrade. The electron cloud can be mitigated by coating the vacuum beam chambers with thin films of low secondary electron yield (SEY). This technique is applied to two stand-alone main bending dipoles of the SPS, where the RF power is fed through a tungsten wire, stretched inside the vacuum chamber. A dipole with a bare stainless steel chamber shows a clear power threshold initiating an abrupt rise in reflected power and pressure. The effect is enhanced at RF frequencies corresponding to electron cyclotron resonances for given magnetic fields. The first results of a fully coated beam chamber do not exhibit any pressure rise or reflected RF power up to the maximum available input power. Here, reflected power has been observed only once and could not be reproduced. The results of a partially coated beam chamber s...

  16. A study on the properties of C-doped Ge8Sb2Te11 thin films during an amorphous-to-crystalline phase transition

    Science.gov (United States)

    Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

    2016-04-01

    In this work, we evaluated the structural, electrical and optical properties of carbon-doped Ge8Sb2Te11 thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve the thermal stability. Ge8Sb2Te11 and carbon-doped Ge8Sb2Te11 films of 250 nm in thickness were deposited on p-type Si (100) and glass substrates by using a RF magnetron reactive co-sputtering system at room temperature. The fabricated films were annealed in a furnance in the 0 ~ 400°C temperature range. The structural properties were analyzed by using X-ray diffraction (XRD), and the result showed that the carbon-doped Ge8Sb2Te11 had a face-centeredcubic (fcc) crystalline structure and an increased crystallization temperature ( T c ). An increase in the T c leads to thermal stability in the amorphous state. The optical properties were analyzed by using an UV-Vis-IR spectrophotometer, and the result showed an increase in the optical-energy band gap ( E op ) in the crystalline materials and an increase in the E op difference (Δ E op ), which is a good effect for reducing the noise in the memory device. The electrical properties were analyzed by using a 4-point probe, which showed an increase in the sheet resistance ( R s ) in the amorphous state and the crystalline state, which means a reduced programming current in the memory device.

  17. LUMINESCENCE AND THERMAL ANNEALING OF SPUTTERED DEPOSITED THULIUM- AND SAMARIUM-DOPED AMORPHOUS AlN FILMS

    OpenAIRE

    MUHAMMAD MAQBOOL

    2005-01-01

    Thin films of thulium- and samarium-doped AlN are deposited on silicon (111) substrates at 77 K by RF magnetron sputtering method. 200–400 nm thick films are grown at 100–200 watts RF power and 5–8 mTorr nitrogen, using a metal target of Al with Tm and Sm separately. X-rays diffraction results show that films are amorphous. Cathodoluminescence studies are performed at room temperature and two dominant peaks are observed in Tm at 467 nm from 1D2 → 3F4 transition and 480 nm from 1G4 to the grou...

  18. Crystallization dynamics of as-deposited amorphous AgInSbTe thin film induced by picosecond laser pulses

    Science.gov (United States)

    Huang, Huan; Zuo, Fangyuan; Zhai, Fengxiao; Wang, Yang; Lai, Tianshu; Wu, Yiqun; Gan, Fuxi

    2010-05-01

    The time-resolved crystallization dynamics of as-deposited amorphous AgInSbTe thin films induced by single picosecond laser pulses has been studied. The crystallization process was shown to be a threshold-dependent multi-stage process. For the same film structure, the total crystallization time does not change significantly with different fluences in a broad fluence range. The total crystallization time can be effectively shortened by an additional thermally conductive silver underlayer. After the film has been primed with a low-fluence single ~30 ps laser pulse, the crystallization process can be simplified to be a monotonic process with a markedly reduced crystallization time.

  19. Effect of Si additions on thermal stability and the phase transition sequence of sputtered amorphous alumina thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bolvardi, H.; Baben, M. to; Nahif, F.; Music, D., E-mail: music@mch.rwth-aachen.de; Schnabel, V.; Shaha, K. P.; Mráz, S.; Schneider, J. M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, D-52074 Aachen (Germany); Bednarcik, J.; Michalikova, J. [Deutsches Elektronen Synchrotron DESY, FS-PE group, Notkestrasse 85, D-22607 Hamburg (Germany)

    2015-01-14

    Si-alloyed amorphous alumina coatings having a silicon concentration of 0 to 2.7 at. % were deposited by combinatorial reactive pulsed DC magnetron sputtering of Al and Al-Si (90-10 at. %) split segments in Ar/O{sub 2} atmosphere. The effect of Si alloying on thermal stability of the as-deposited amorphous alumina thin films and the phase formation sequence was evaluated by using differential scanning calorimetry and X-ray diffraction. The thermal stability window of the amorphous phase containing 2.7 at. % of Si was increased by more than 100 °C compared to that of the unalloyed phase. A similar retarding effect of Si alloying was also observed for the α-Al{sub 2}O{sub 3} formation temperature, which increased by more than 120 °C. While for the latter retardation, the evidence for the presence of SiO{sub 2} at the grain boundaries was presented previously, this obviously cannot explain the stability enhancement reported here for the amorphous phase. Based on density functional theory molecular dynamics simulations and synchrotron X-ray diffraction experiments for amorphous Al{sub 2}O{sub 3} with and without Si incorporation, we suggest that the experimentally identified enhanced thermal stability of amorphous alumina with addition of Si is due to the formation of shorter and stronger Si–O bonds as compared to Al–O bonds.

  20. Preparation and characterization of electrochemically deposited carbon nitride films on silicon substrate

    International Nuclear Information System (INIS)

    Yan Xingbin; Xu Tao; Chen Gang; Yang Shengrong; Liu Huiwen; Xue Qunji

    2004-01-01

    Carbon nitride films (CN x films) were deposited on Si(100) substrates by the electrolysis of methanol-urea solution at high voltage, atmospheric pressure, and low temperature. The microstructure and morphology of the resulting CN x films were analysed by means of Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), Fourier-transform infrared spectrometry (FTIR), x-ray diffraction (XRD), and atomic force microscopy. The tribological properties of the CN x films were examined on an UMT-2MT friction and wear test rig. The Raman spectrum showed two characteristic bands: a graphite G band and a disordered D band of carbon, which suggested the presence of an amorphous carbon matrix. XPS and FTIR measurements suggested the existence of both single and double carbon-nitride bonds in the film and the hydrogenation of the carbon nitride phase. The XRD spectrum showed various peaks of different d values, which could confirm the existence of the polycrystalline carbon nitride phase. The hydrogenated CN x films were compact and uniform, with a root mean square roughness of about 18 nm. The films showed excellent friction-reduction and wear-resistance, with the friction coefficient in the stable phase being about 0.08. In addition, the growth mechanism of the CN x films in liquid phase electro-deposition was discussed as well. It was assumed that the molecules of CH 3 OH and CO(NH 2 ) 2 were polarized under high electric field, and the CN x film was formed on the substrate through the reaction of the -CH 3 and -NH 2 groups on the cathode

  1. Built-In Potentials Induced by Molecular Order in Amorphous Organic Thin Films.

    Science.gov (United States)

    Friederich, Pascal; Rodin, Vadim; von Wrochem, Florian; Wenzel, Wolfgang

    2018-01-17

    Many molecules used to fabricate organic semiconductor devices carry an intrinsic dipole moment. Anisotropic orientation of such molecules in amorphous organic thin films during the deposition process can lead to the spontaneous buildup of an electrostatic potential perpendicular to the film. This so-called giant surface potential (GSP) effect can be exploited in organic electronics applications and was extensively studied in experiment. However, presently, an understanding of the molecular mechanism driving the orientation is lacking. Here, we model the physical vapor deposition process of seven small organic molecules employed in organic light-emitting diode applications with atomistic simulations. We are able to reproduce experimental results for a wide range of strength of the GSP effect. We find that the electrostatic interaction between the dipole moments of the molecules limits the GSP strength and identify short-range van der Waals interactions between the molecule and the surface during deposition as the driving force behind the anisotropic orientation. We furthermore show how the GSP effect influences the energy levels responsible for charge transport, which is important for the design of organic semiconductors and devices.

  2. Defect-induced instability mechanisms of sputtered amorphous indium tin zinc oxide thin-film transistors

    Science.gov (United States)

    Park, Jinhee; Rim, You Seung; Li, Chao; Wu, Jiechen; Goorsky, Mark; Streit, Dwight

    2018-04-01

    We report the device performance and stability of sputtered amorphous indium-tin-zinc-oxide (ITZO) thin-film transistors as a function of oxygen ratio [O2/(Ar + O2)] during growth. Increasing the oxygen ratio enhanced the incorporation of oxygen during ITZO film growth and reduced the concentration of deep-level defects associated with oxygen vacancies. Under illumination with no bias stress, device stability and persistent photocurrent were improved with increased oxygen ratio. Bias stress tests of the devices were also performed with and without illumination. While high oxygen ratio growth conditions resulted in decreased deep-level oxygen vacancies in the ITZO material, the same conditions resulted in degradation of the interfacial layer between the ITZO channel and dielectric due to the migration of energetic oxygen ions to the interface. Therefore, when bias stress was applied, increased carrier trap density at the interface led to a decrease in device stability that offsets any improvement in the material itself. In order to take advantage of the improved ITZO material growth at a high oxygen ratio, the interface-related problems must be solved.

  3. Magnetic and thermal properties of amorphous TbFeCo alloy films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ke, E-mail: K.Wang@hqu.edu.cn; Dong, Shuo; Huang, Ya; Qiu, Yuzhen

    2017-07-15

    Highlights: • Significant increase in magnetization is observed in TbFeCo upon crystallization. • The crystallization temperature is determined in the range between 400 and 450 °C. • The activation barriers for structural changes are obtained successfully. • Better thermal stability against crystallization and oxidation is demonstrated in FeCo-rich sample than Tb-rich type. - Abstract: Amorphous TbFeCo material with perpendicular magnetic anisotropy is currently attracting more attention for potential applications in spintronic devices and logic memories. We systematically investigate magnetic, structural, thermal, optical and electrical properties of TbFeCo alloy films. It shows out-of-plane easy axis of the films turns into in-plane orientation after annealing. Significant increase in saturation magnetization in the temperature range between 400 and 450 °C is revealed by thermomagnetic measurements. The occurrence of crystallization and oxidation at high temperatures is confirmed by X-ray diffraction measurements. Pronounced changes in optical reflectance and sheet resistance are observed with temperature, in line with structural relaxation and change. The activation barriers for crystallization and oxidation are determined to be 1.01 eV and 0.83 eV, respectively, for FeCo-rich and Tb-rich samples. Better thermal stability against crystallization and oxidation is demonstrated in the FeCo-rich sample than the Tb-rich type. Our results provide some useful information for the alloy used in device fabrication.

  4. A diamond-like carbon film for wear protection of steel

    International Nuclear Information System (INIS)

    Harris, S.J.; Weiner, A.M.; Tung, S.C.; Simko, S.J.; Militello, M.C.

    1993-01-01

    We have deposited diamond-like carbon (DLC) and amorphous SiN films on a tool steel coupon. In order to make the DLC adhere to the metal, we used an interlayer of amorphous SiN, taking advantage of the fact that the SiN coating adheres to the metal and the DLC adheres to the SiN. The DLC/SiN-coated substrate showed a significant reduction in friction compared with either uncoated or SiN-coated substrates in our laboratory bench tester after lubricated sliding for 30 h. In addition, on the basis of surface profilometry analysis, the DLC/SiN-coated plate showed less wear and a much smoother surface. The films were analyzed using X-ray photo-electron spectroscopy and sputter depth profiling. Our results suggest that DLC is a promising coating for wear protection. (orig.)

  5. Dependence of electrical and optical properties of amorphous SiC:H thin films grown by rf plasma enhanced chemical vapor deposition on annealing temperature

    CERN Document Server

    Park, M G; Hong, B; Kim, Y T; Yoon, D H

    2002-01-01

    In this article, we investigated the dependence of optical and electrical properties of hydrogenated amorphous silicon carbide (a-SiC:H) films on annealing temperature (T sub a) and radio frequency (rf) power. The substrate temperature (T sub s) was 250 deg. C, the rf power was varied from 30 to 400 W, and the range of T sub a was from 400 to 600 deg. C. The a-SiC:H films were deposited by using the plasma enhanced chemical vapor deposition system on Corning 7059 glasses and p-type Si (100) wafers with a SiH sub 4 +CH sub 4 gas mixture. The experimental results have shown that the optical bandgap energy (E sub g) of the a-SiC:H thin films changed little on the annealing temperature while E sub g increased with the rf power. The Raman spectrum of the thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs. The current-voltage characteristics have shown good electrical properties in relation to the annealed films.

  6. Laser Raman microprobe spectroscopy as a diagnostic for the characterisation of diamond and diamond like carbon (DLC) thin films

    International Nuclear Information System (INIS)

    Johnston, C.

    1990-10-01

    Invariably when manufacturing an artificial diamond film a mixture of carbon is deposited - tetragonally bonded (diamond), trigonally bonded (graphite) and other allotropic crystalline forms and amorphous carbons. This imposes a need for careful analysis to determine exactly what carbon types constitute the films. Raman spectroscopy is particularly sensitive to crystal and atomic structure and has a number of advantages which make it one of the most useful techniques for interrogating diamond and DLC thin films. Although Raman spectroscopy alone cannot fully characterise the film, it can give more information than simply what particular form of carbon or other impurities are present in the film. It can be used to determine the ratio of sp 2 to sp 3 bonding within the film, and to some extent the crystallite or domain size and the internal stress of the film. The use of laser Raman microprobe spectroscopy as a diagnostic tool in the analysis of diamond and DLC thin films is demonstrated for a variety of carbon films on various substrates and the characterisation of these films is discussed. (author)

  7. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    International Nuclear Information System (INIS)

    Mouro, J.; Gualdino, A.; Chu, V.; Conde, J. P.

    2013-01-01

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n + -type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force

  8. Neutron reflectometry and QCM-D study of the interaction of cellulases with films of amorphous cellulose.

    Science.gov (United States)

    Cheng, Gang; Liu, Zelin; Murton, Jaclyn K; Jablin, Michael; Dubey, Manish; Majewski, Jaroslaw; Halbert, Candice; Browning, James; Ankner, John; Akgun, Bulent; Wang, Chao; Esker, Alan R; Sale, Kenneth L; Simmons, Blake A; Kent, Michael S

    2011-06-13

    Improving the efficiency of enzymatic hydrolysis of cellulose is one of the key technological hurdles to reduce the cost of producing ethanol and other transportation fuels from lignocellulosic material. A better understanding of how soluble enzymes interact with insoluble cellulose will aid in the design of more efficient enzyme systems. We report a study involving neutron reflectometry (NR) and quartz crystal microbalance with dissipation monitoring (QCM-D) of the interaction of a fungal enzyme extract ( T. viride ) and an endoglucanse from A. niger with amorphous cellulose films. The use of amorphous cellulose is motivated by that the fact that several biomass pretreatments currently under investigation disrupt the native crystalline structure of cellulose and increase the amorphous content. NR reveals the profile of water through the film at nanometer resolution and is highly sensitive to interfacial roughness, whereas QCM-D provides changes in mass and film stiffness. NR can be performed using either H(2)O- or D(2)O-based aqueous reservoirs. NR measurement of swelling of a cellulose film in D(2)O and in H(2)O revealed that D/H exchange on the cellulose chains must be taken into account when a D(2)O-based reservoir is used. The results also show that cellulose films swell slightly more in D(2)O than in H(2)O. Regarding enzymatic digestion, at 20 °C in H(2)O buffer the T. viride cocktail rapidly digested the entire film, initially roughening the surface, followed by penetration and activity throughout the bulk of the film. In contrast, over the same time period, the endoglucanase was active mainly at the surface of the film and did not increase the surface roughness.

  9. Neutron Reflectometry and QCM-D Study of the Interaction of Cellulases with Films of Amorphous Cellulose

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Gang; Liu, Zelin; Murton, Jaclyn K; Jablin, Michael S; Dubey, Manish; Majewski, Jaroslaw; Halbert, Candice E; Browning, James F; Ankner, John; Akgun, Bulent; Wang, Chao; Esker, Alan R; Sale, Kenneth L; Simmons, Blake A; Kent, Michael S

    2011-06-13

    Improving the efficiency of enzymatic hydrolysis of cellulose is one of the key technological hurdles to reduce the cost of producing ethanol and other transportation fuels from lignocellulosic material. A better understanding of how soluble enzymes interact with insoluble cellulose will aid in the design of more efficient enzyme systems. We report a study involving neutron reflectometry (NR) and quartz crystal microbalance with dissipation monitoring (QCM-D) of the interaction of a fungal enzyme extract (T. viride) and an endoglucanse from A. niger with amorphous cellulose films. The use of amorphous cellulose is motivated by that the fact that several biomass pretreatments currently under investigation disrupt the native crystalline structure of cellulose and increase the amorphous content. NR reveals the profile of water through the film at nanometer resolution and is highly sensitive to interfacial roughness, whereas QCM-D provides changes in mass and film stiffness. NR can be performed using either H₂O- or D₂O-based aqueous reservoirs. NR measurement of swelling of a cellulose film in D₂O and in H₂O revealed that D/H exchange on the cellulose chains must be taken into account when a D₂O-based reservoir is used. The results also show that cellulose films swell slightly more in D₂O than in H₂O. Regarding enzymatic digestion, at 20 °C in H₂O buffer the T. viride cocktail rapidly digested the entire film, initially roughening the surface, followed by penetration and activity throughout the bulk of the film. In contrast, over the same time period, the endoglucanase was active mainly at the surface of the film and did not increase the surface roughness.

  10. Preparation and electrochemical performance of copper foam-supported amorphous silicon thin films for rechargeable lithium-ion batteries

    International Nuclear Information System (INIS)

    Li Haixia; Cheng Fangyi; Zhu Zhiqiang; Bai Hongmei; Tao Zhanliang; Chen Jun

    2011-01-01

    Research highlights: → Amorphous Si thin films have been deposited on copper foam substrate by radio-frequency (rf) magnetron sputtering. → The as-prepared Si/Cu films with interconnected 3-dimensional structure are employed as anode materials of rechargeable lithium-ion batteries, showing that the electrode properties are greatly affected by the deposition temperature. → The film electrode deposited at an optimum temperature of 300 deg. C delivers a specific capacity of ∼2900 mAh/g and a coulombic efficiency above 95% at charge/discharge current density of 0.2C after 30 cycles. → The Li + diffusion coefficiency in copper foam-supported Si thin films is determined to be 2.36 x 10 -9 cm 2 /s. → The combination of rf magnetron sputtering and cooper foam substrate is an efficient route to prepare amorphous Si films with high capacity and cyclability due to the efficient ionic diffusion and interface contact with a good conductive current collector. - Abstract: Amorphous Si thin films, which have been deposited on copper foam by radio-frequency (rf) magnetron sputtering, are employed as anode materials of rechargeable lithium-ion batteries. The morphologies and structures of the as-prepared Si thin films are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray powder diffraction (XRD). Electrochemical performance of lithium-ion batteries with the as-prepared Si films as the anode materials is investigated by cyclic voltammetry and charge-discharge measurements. The results show that the electrode properties of the prepared amorphous Si films are greatly affected by the deposition temperature. The film electrode deposited at an optimum temperature of 300 deg. C can deliver a specific capacity of ∼2900 mAh/g and a coulombic efficiency above 95% at charge/discharge current density of 0.2C after 30 cycles. The Li + diffusion coefficiency in copper foam-supported Si thin films is determined to be 2.36 x 10 -9 cm

  11. Characterizing and Modeling Transient Photoconductivity in Amorphous In-Ga-Zn-O Thin Films

    Science.gov (United States)

    Luo, Jiajun

    Amorphous In-Ga-Zn-O (a-IGZO) and other amorphous oxide semiconductors are attracting increasing attention from the display industry for their high electron mobility, ease of large-area manufacture, and potential for future flexible electronics. However, such amorphous materials often show instability under gate voltage bias, temperature, and illumination stress, with extremely slow relaxation times. Previous research has focused on empirical solutions to the instability problem, such as laser-assisted annealing and passivation to reduce device degradation. But a complete characterization of the degradation process is still lacking, and understanding of the underlying physical mechanism is still limited. This work focuses on the transient photoresponse of a-IGZO thin films. By measuring the basic electrical properties of the thin films under photo-excitation and dark relaxation, it is confirmed that the conductivity photoresponse is mostly due to the creation and trapping of free electrons, while electron mobility remains mostly constant. However, transient photoresponse in a-IGZO does not follow the simple exponential behavior typically observed crystalline materials. It shows a faster transient at short time scales and slower transient at long time scales comparing to a simple exponential response. Proper characterization of such a photoresponse requires improvements to the conventional van der Pauw and Hall measurement methods. To make fast and accurate Hall measurements, a heterodyne Hall method is developed using simple analog signal processing. This method not only enables continuous measurement of the carrier density transient at a single magnetic field, but also extends the lowest mobility that can be measured by Hall effects. For the non-exponential photoresponse in a-IGZO with fast initial transient and extremely slow long-term transient, a modulated time-division multiplexing apparatus is also introduced to measure several samples in parallel while

  12. Aligned Carbon Nanotubes for High-Performance Films and Composites

    Science.gov (United States)

    Zhang, Liwen

    Carbon nanotubes (CNTs) with extraordinary properties and thus many potential applications have been predicted to be the best reinforcements for the next-generation multifunctional composite materials. Difficulties exist in transferring the most use of the unprecedented properties of individual CNTs to macroscopic forms of CNT assemblies. Therefore, this thesis focuses on two main goals: 1) discussing the issues that influence the performance of bulk CNT products, and 2) fabricating high-performance dry CNT films and composite films with an understanding of the fundamental structure-property relationship in these materials. Dry CNT films were fabricated by a winding process using CNT arrays with heights of 230 mum, 300 im and 360 mum. The structures of the as-produced films, as well as their mechanical and electrical properties were examined in order to find out the effects of different CNT lengths. It was found that the shorter CNTs synthesized by shorter time in the CVD furnace exhibited less structural defects and amorphous carbon, resulting in more compact packing and better nanotube alignment when made into dry films, thus, having better mechanical and electrical performance. A novel microcombing approach was developed to mitigate the CNT waviness and alignment in the dry films, and ultrahigh mechanical properties and exceptional electrical performance were obtained. This method utilized a pair of sharp surgical blades with microsized features at the blade edges as micro-combs to, for the first time, disentangle and straighten the wavy CNTs in the dry-drawn CNT sheet at single-layer level. The as-combed CNT sheet exhibited high level of nanotube alignment and straightness, reduced structural defects, and enhanced nanotube packing density. The dry CNT films produced by microcombing had a very high Young's modulus of 172 GPa, excellent tensile strength of 3.2 GPa, and unprecedented electrical conductivity of 1.8x10 5 S/m, which were records for CNT films or

  13. Effect of back reflectors on photon absorption in thin-film amorphous silicon solar cells

    Science.gov (United States)

    Hossain, Mohammad I.; Qarony, Wayesh; Hossain, M. Khalid; Debnath, M. K.; Uddin, M. Jalal; Tsang, Yuen Hong

    2017-10-01

    In thin-film solar cells, the photocurrent conversion productivity can be distinctly boosted-up utilizing a proper back reflector. Herein, the impact of different smooth and textured back reflectors was explored and effectuated to study the optical phenomena with interface engineering strategies and characteristics of transparent contacts. A unique type of wet-chemically textured glass-substrate 3D etching mask used in superstrate (p-i-n) amorphous silicon-based solar cell along with legitimated back reflector permits joining the standard light-trapping methodologies, which are utilized to upgrade the energy conversion efficiency (ECE). To investigate the optical and electrical properties of solar cell structure, the optical simulations in three-dimensional measurements (3D) were performed utilizing finite-difference time-domain (FDTD) technique. This design methodology allows to determine the power losses, quantum efficiencies, and short-circuit current densities of various layers in such solar cell. The short-circuit current densities for different reflectors were varied from 11.50 to 13.27 and 13.81 to 16.36 mA/cm2 for the smooth and pyramidal textured solar cells, individually. Contrasted with the comparable flat reference cell, the short-circuit current density of textured solar cell was increased by around 24%, and most extreme outer quantum efficiencies rose from 79 to 86.5%. The photon absorption was fundamentally improved in the spectral region from 600 to 800 nm with no decrease of photocurrent shorter than 600-nm wavelength. Therefore, these optimized designs will help to build the effective plans next-generation amorphous silicon-based solar cells.

  14. Structural and chemical characterization of nanocrystalline and amorphous hydrogenated Si films

    Energy Technology Data Exchange (ETDEWEB)

    Garozzo, Cristina; Puglisi, Rosaria Anna; Lombardo, Salvatore [Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi, Ottava Strada 5, Zona Industriale, 95121 Catania (Italy)

    2012-10-15

    We present a study on the morphological evolution of hydrogenated amorphous silicon layers obtained by plasma enhanced chemical vapor deposition at different H dilutions in the regime close to the formation of the nanocrystalline (nc-Si) phase. The role of hydrogen in the transition from the amorphous to the crystalline phase is investigated by accurate structural and chemical characterisation, from the early stages of nucleation, where the nuclei present a size slightly larger than the critical nucleus, i.e. about 0.8 nm in radius, up to the formation of crystalline grains larger than 30 nm in radius. Hydrogen is found to have a crucial role in the transition from a-Si:H to nc-Si:H, since it forms an intermediate bond-centred Si-H-Si configuration, and when the H moves away from the bond-centred location, the strained Si-Si bonds either break or relax, undergoing local structural rearrangements closer to those of c-Si. During this phase transition a part of H bonds at grain boundaries. A correlation between the structural characteristics of the crystalline phase and the bonding mechanism of Si with H through multiple hydrides, such as Si-H{sup 2} and Si-H{sup 3} is found. Particularly the SiH{sup 3} are found to be directly correlated to the shape and the size of the nanocrystallites present in the films (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Present status of amorphous In–Ga–Zn–O thin-film transistors

    Directory of Open Access Journals (Sweden)

    Toshio Kamiya, Kenji Nomura and Hideo Hosono

    2010-01-01

    Full Text Available The present status and recent research results on amorphous oxide semiconductors (AOSs and their thin-film transistors (TFTs are reviewed. AOSs represented by amorphous In–Ga–Zn–O (a-IGZO are expected to be the channel material of TFTs in next-generation flat-panel displays because a-IGZO TFTs satisfy almost all the requirements for organic light-emitting-diode displays, large and fast liquid crystal and three-dimensional (3D displays, which cannot be satisfied using conventional silicon and organic TFTs. The major insights of this review are summarized as follows. (i Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs. (ii A sixth-generation (6G process is demonstrated for 32'' and 37'' displays. (iii An 8G sputtering apparatus and a sputtering target have been developed. (iv The important effect of deep subgap states on illumination instability is revealed. (v Illumination instability under negative bias has been intensively studied, and some mechanisms are proposed. (vi Degradation mechanisms are classified into back-channel effects, the creation of traps at an interface and in the gate insulator, and the creation of donor states in annealed a-IGZO TFTs by the Joule heating; the creation of bulk defects should also be considered in the case of unannealed a-IGZO TFTs. (vii Dense passivation layers improve the stability and photoresponse and are necessary for practical applications. (viii Sufficient knowledge of electronic structures and electron transport in a-IGZO has been accumulated to construct device simulation models.

  16. Thermally-activated internal friction peaks in amorphous films of Nb3Ge and Nb3Si

    International Nuclear Information System (INIS)

    Berry, B.S.; Pritchet, W.C.

    1978-01-01

    A large number of the thermally-activated internal friction peaks observed in crystalline solids are associated with the general mechanism of stress-induced directional short-range ordering. These peaks are an indirect but nevertheless valuable structural probe, and provide an important means of obtaining quantitative information on the kinetics of local atomic movements. This paper deals with what are thought to be the first-known examples of such peaks in the field of metallic glasses. The peaks have been observed in amorphous films of Nb 3 Ge and Nb 3 Si which are both superconductors with transition temperatures Tsub(c) near 3.6K. Although Tsub(c) is thus well below the record values of approximately equal to 23K reported for crystalline films of Nb 3 Ge, Tsuei has found the amorphous films to be much superior mechanically to their crystalline counterparts. Consequently, the amorphous films have technological interest as an easily-handled source from which the brittle high-Tsub(c) phase may be obtained by a final in-situ anneal. (author)

  17. Element specific spin and orbital moments of nanoscale CoFeB amorphous thin films on GaAs(100

    Directory of Open Access Journals (Sweden)

    Yu Yan

    2016-09-01

    Full Text Available CoFeB amorphous films have been synthesized on GaAs(100 and studied with X-ray magnetic circular dichroism (XMCD and transmission electron microscopy (TEM. We have found that the ratios of the orbital to spin magnetic moments of both the Co and Fe in the ultrathin amorphous film have been enhanced by more than 300% compared with those of the bulk crystalline Co and Fe, and specifically a large orbital moment of 0.56 μB from the Co atoms has been observed and at the same time the spin moment of the Co atoms remains comparable to that of the bulk hcp Co. The results indicate that the large uniaxial magnetic anisotropy (UMA observed in the ultrathin CoFeB film on GaAs(100 is related to the enhanced spin-orbital coupling of the Co atoms in the CoFeB. This work offers experimental evidences of the correlation between the UMA and the element specific spin and orbital moments in the CoFeB amorphous film on the GaAs(100 substrate, which is of significance for spintronics applications.

  18. Anisotropy of optical, electrical, and photoelectrical properties of amorphous hydrogenated silicon films modified by femtosecond laser irradiation

    Science.gov (United States)

    Amasev, D. V.; Khenkin, M. V.; Drevinskas, R.; Kazansky, P.; Kazanskii, A. G.

    2017-06-01

    Two types of independent anisotropic structures have been formed simultaneously in amorphous hydrogenated films by applying a femtosecond laser pulse to them, i.e., a structure with a period of several micrometers to several tens of micrometers and a structure with a period of several hundred nanometers. The formation mechanisms of these strictures are different, which allows us to orient them relative to each other in a desirable way. Both structures independently influence the optical properties of the modified films, which causes the diffraction of transmitted light and making the films polarization-sensitive. The conductivity of the modified films correlates with the mutual orientation of the anisotropic structures, whereas no interrelation between the photoconductivity and optical performance of the modified films has been observed.

  19. Device and material characterization and analytic modeling of amorphous silicon thin film transistors

    Science.gov (United States)

    Slade, Holly Claudia

    Hydrogenated amorphous silicon thin film transistors (TFTs) are now well-established as switching elements for a variety of applications in the lucrative electronics market, such as active matrix liquid crystal displays, two-dimensional imagers, and position-sensitive radiation detectors. These applications necessitate the development of accurate characterization and simulation tools. The main goal of this work is the development of a semi- empirical, analytical model for the DC and AC operation of an amorphous silicon TFT for use in a manufacturing facility to improve yield and maintain process control. The model is physically-based, in order that the parameters scale with gate length and can be easily related back to the material and device properties. To accomplish this, extensive experimental data and 2D simulations are used to observe and quantify non- crystalline effects in the TFTs. In particular, due to the disorder in the amorphous network, localized energy states exist throughout the band gap and affect all regimes of TFT operation. These localized states trap most of the free charge, causing a gate-bias-dependent field effect mobility above threshold, a power-law dependence of the current on gate bias below threshold, very low leakage currents, and severe frequency dispersion of the TFT gate capacitance. Additional investigations of TFT instabilities reveal the importance of changes in the density of states and/or back channel conduction due to bias and thermal stress. In the above threshold regime, the model is similar to the crystalline MOSFET model, considering the drift component of free charge. This approach uses the field effect mobility to take into account the trap states and must utilize the correct definition of threshold voltage. In the below threshold regime, the density of deep states is taken into account. The leakage current is modeled empirically, and the parameters are temperature dependent to 150oC. The capacitance of the TFT can be

  20. Influence of the deposition technique on the structural and optical properties of amorphous As-S films

    International Nuclear Information System (INIS)

    Gonzalez-Leal, J.M.; Stuchlik, M.; Vlcek, M.; Jimenez-Garay, R.; Marquez, E.

    2005-01-01

    Amorphous chalcogenide films of stoichiometric composition As 40 S 60 have been prepared by three different deposition techniques, namely, vacuum thermal evaporation, plasma-enhanced chemical vapour deposition (PECVD) and spin coating. Indications of film-thickness inhomogeneities were found in all samples. Thermally evaporated and chemically deposited samples showed wedge-shaped surface profiles, while significant surface roughness was evidenced in the spin-coated ones. Refractive-index values of the film samples were obtained, with accuracy better than 1%, by using the envelope method most suitable for each particular film surface profile. Structural information of the samples has been gained from X-ray diffraction experiments, and also inferred from the analysis of the dispersion of the refractive index, on the basis of a single-oscillator model. Analysis of the optical absorption spectra allowed both calculating the optical band gaps and estimating the localised-state tail width of these semiconducting films. In addition, information about the degree of structural randomness of these thin-film amorphous alloys was also obtained from this analysis, which is in good agreement with the conclusions derived from the X-ray diffraction results

  1. The ir emission features: Emission from PAH [Polycyclic Aromatic Hydrocarbons] molecules and amorphous carbon particles

    International Nuclear Information System (INIS)

    Allamandola, L.J.; Tielens, A.G.G.M.; Barker, J.R.

    1986-01-01

    PAHs can have several forms in the interstellar medium. To assess the importance of each requires the availability of a collection of high quality, complete mid-ir interstellar emission spectra, a collection of laboratory spectra of PAH samples prepared under realistic conditions and a firm understanding of the microscopic emission mechanism. Given what we currently know about PAHs, the spectroscopic data suggests that there are at least two components which contribute to the interstellar emission spectrum: free molecule sized PAHs producing the narrow features and amorphous carbon particles (which are primarily made up of an irregular ''lattice'' of PAHs) contributing to the broad underlying components. An exact treatment of the ir fluorescence from highly vibrationally excited large molecules shows that species containing between 20 and 30 carbon atoms are responsible for the narrow features, although the spectra match more closely with the spectra of amorphous carbon particles. Since little is known about the spectroscopic properties of free PAHs and PAH clusters, much laboratory work is called for in conjunction with an observational program which focuses on the spatial characteristics of the spectra. In this way the distribution and evolution of carbon from molecule to particle can be traced. 38 refs., 9 figs

  2. Crystalline and Amorphous Phosphorus – Carbon Nanotube Composites as Promising Anodes for Lithium-Ion Batteries

    KAUST Repository

    Smajic, Jasmin

    2016-05-04

    Battery research has been going full steam and with that the search for alternative anodes. Among many proposed electrode materials, little attention has been given to phosphorus. Phosphorus boasts the third highest gravimetric charge capacity and the highest volumetric charge capacity of all elements. Because of that, it would be an attractive battery anode material were it not for its poor cyclability with significant capacity loss immediately after the first cycle. This is known to be the consequence of considerable volume changes of phosphorus during charge/discharge cycles. In this work, we propose circumventing this issue by mixing amorphous red phosphorus with carbon nanotubes. By employing a non-destructive sublimation-deposition method, we have synthesized composites where the synergetic effect between phosphorus and carbon nanotubes allow for an improvement in the electrochemical performance of battery anodes. In fact, it has been shown that carbon nanotubes can act as an effective buffer to phosphorus volumetric expansions and contractions during charging and discharging of the half-cells [1]. By modifying the synthesis parameters, we have also been able to change the degree of crystallinity of the phosphorus matrix in the composites. In fact, the less common phase of red phosphorus, named fibrous phosphorus, was obtained, and that explains some of the varying electrochemical performances observed in the composites. Overall, it is found that a higher surface area of amorphous phosphorus allows for a better anode material when using single-walled carbon nanotubes as fillers.

  3. Structural, nanomechanical and variable range hopping conduction behavior of nanocrystalline carbon thin films deposited by the ambient environment assisted filtered cathodic jet carbon arc technique

    Energy Technology Data Exchange (ETDEWEB)

    Panwar, O.S., E-mail: ospanwar@mail.nplindia.ernet.in [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Rawal, Ishpal; Tripathi, R.K. [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Srivastava, A.K. [Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Kumar, Mahesh [Ultrafast Opto-Electronics and Tetrahertz Photonics Group, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India)

    2015-04-15

    Highlights: • Nanocrystalline carbon thin films are grown by filtered cathodic jet carbon arc process. • Effect of gaseous environment on the properties of carbon films has been studied. • The structural and nanomechanical properties of carbon thin films have been studied. • The VRH conduction behavior in nanocrystalline carbon thin films has been studied. - Abstract: This paper reports the deposition and characterization of nanocrystalline carbon thin films by filtered cathodic jet carbon arc technique assisted with three different gaseous environments of helium, nitrogen and hydrogen. All the films are nanocrystalline in nature as observed from the high resolution transmission electron microscopic (HRTEM) measurements, which suggests that the nanocrystallites of size ∼10–50 nm are embedded though out the amorphous matrix. X-ray photoelectron spectroscopic studies suggest that the film deposited under the nitrogen gaseous environment has the highest sp{sup 3}/sp{sup 2} ratio accompanied with the highest hardness of ∼18.34 GPa observed from the nanoindentation technique. The film deposited under the helium gaseous environment has the highest ratio of the area under the Raman D peak to G peak (A{sub D}/A{sub G}) and the highest conductivity (∼2.23 S/cm) at room temperature, whereas, the film deposited under the hydrogen environment has the lowest conductivity value (2.27 × 10{sup −7} S/cm). The temperature dependent dc conduction behavior of all the nanocrystalline carbon thin films has been analyzed in the light of Mott’s variable range hopping (VRH) conduction mechanism and observed that all the films obey three dimension VRH conduction mechanism for the charge transport.

  4. Irreversible lithium storage during lithiation of amorphous silicon thin film electrodes studied by in-situ neutron reflectometry

    Science.gov (United States)

    Jerliu, Bujar; Hüger, Erwin; Horisberger, Michael; Stahn, Jochen; Schmidt, Harald

    2017-08-01

    Amorphous silicon is a promising high-capacity anode material for application in lithium-ion batteries. However, a huge drawback of the material is that the large capacity losses taking place during cycling lead to an unstable performance. In this study we investigate the capacity losses occurring during galvanostatic lithiation of amorphous silicon thin film electrodes by in-situ neutron reflectometry experiments for the first ten cycles. As determined from the analysis of the neutron scattering length density and of the film thickness, the capacity losses are due to irreversible storage of lithium in the electrode. The amount of stored lithium increases during cycling to 20% of the maximum theoretical capacity after the 10th cycle. Possible explanations are discussed.

  5. Performance and stability of low temperature hydrogenated amorphous silicon thin film transistors fabricated on stainless steel substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sung Hwan; Kim, Sung Ki; Lee, Jong-Kwon; Lee, Seok-Woo; Lee, Hong Koo; Peak, Seung Han; Park, Yong-In; Kim, Chang-Dong; Hwang, Yong Kee; Chung, In-Jae [LG Display R and D Center, Paju, Gyongki-do, 413-811 (Korea)

    2010-04-15

    The key development issues in the flexible displays are TFT backplane technology, which requires competitive device performance and low temperature process compatible with flexible substrate. Here, we have fabricated low temperature hydrogenated amorphous silicon thin film transistor on a stainless steel substrate coated with organic barrier layer. Then, we have studied initial device performance by varying plasma gas and pressure conditions at a low power and a low temperature during amorphous silicon and silicon nitride deposition steps. Also, we discuss the stability characteristics of this low temperature processed thin film transistor, which reveals enough possibility for use in flexible display applications. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. On the photo-induced shift of the optical gap in amorphous Ge6As43S35Se16 film

    Czech Academy of Sciences Publication Activity Database

    Kincl, Miloslav; Tasseva, J.; Petkov, K.; Knotek, P.; Tichý, Ladislav

    2009-01-01

    Roč. 11, č. 4 (2009), s. 395-398 ISSN 1454-4164 Institutional research plan: CEZ:AV0Z40500505 Keywords : amorphous chalcogenide film Subject RIV: CA - Inorganic Chemistry Impact factor: 0.433, year: 2009

  7. Local Structure of the Amorphous Precursor to Ba-Hexaferrite Thin Films: An Anisotropic Octahedral Fe-O Glass Network

    Science.gov (United States)

    Snyder, J. E.; Harris, V. G.; Koon, N. C.; Sui, X.; Kryder, M. H.

    1996-10-01

    Anisotropic local structure has been observed around both the Fe and Ba ions in the amorphous precursor to Ba-hexaferrite thin films, using polarization-dependent extended x-ray-absorption fine structure. This anisotropic local structure, consisting mainly of a network of Fe-O octahedra, determines the orientation of the fast-growing basal planes during crystallization, and thus the directions of the c axes and the resulting magnetic anisotropy.

  8. Enzymatic Degradation of Poly(ethylene 2,5-furanoate Powders and Amorphous Films

    Directory of Open Access Journals (Sweden)

    Simone Weinberger

    2017-10-01

    Full Text Available Poly(ethylene 2,5-furanoate (PEF is arousing great interest as a biobased alternative to plastics like poly(ethylene terephthalate (PET due to its wide range of potential applications, such as food and beverage packaging, clothing, and in the car industry. In the present study, the hydrolysis of PEF powders of different molecular masses (Mn = 55, Mw = 104 kg/mol and Mn = 18, Mw = 29 kg/mol and various particle sizes (180 < d and 180 < d < 425 µm using cutinase 1 from Thermobifida cellulosilytica (Thc_cut1 was studied. Thereby, the effects of molecular mass, particle size and crystallinity on enzymatic hydrolysis were investigated. The results show that particles with lower molecular mass are hydrolyzed faster than those with higher masses, and that the higher the molecular mass, the lower the influence of the particle size on the hydrolysis. Furthermore, cutinases from Humicola insolens (HiC and Thc_cut1 were compared with regard to their hydrolytic activity on amorphous PEF films (measured as release of 2,5-furandicarboxylic acid (FDCA and weight loss in different reaction media (1 M KPO pH 8, 0.1 M Tris-HCl pH 7 and at different temperatures (50 °C and 65 °C. A 100% hydrolysis of the PEF films was achieved after only 72 h of incubation with a HiC in 1 M KPO pH 8 at 65 °C. Moreover, the hydrolysis reaction was monitored by LC/TOF-MS analysis of the released reaction products and by Scanning Electron Microscopy (SEM examination of the polymer surfaces. Enzymatic hydrolysis of PEF with Thc_cut1 and HiC has potential for use in surface functionalization and recycling purposes.

  9. Effect of Fluorine Diffusion on Amorphous-InGaZnO-Based Thin-Film Transistors.

    Science.gov (United States)

    Jiang, Jingxin; Furuta, Mamoru

    2018-08-01

    This study investigated the effect of fluorine (F) diffusion from a fluorinated siliconnitride passivation layer (SiNX:F-Pa) into amorphous-InGaZnO-based thin-film transistors (a-IGZO TFTs). The results of thermal desorption spectroscopy and secondary ion mass spectrometry revealed that F was introduced into the SiOX etch-stopper layer (SiOX-ES) during the deposition of a SiNX:F-Pa, and did not originate from desorption of Si-F bonds; and that long annealing times enhanced F diffusion from the SiOX-ES layer to the a-IGZO channel. Improvements to the performance and threshold-voltage (Vth) negative shift of IGZO TFTs were achieved when annealing time increased from 1 h to 3 h; and capacitance-voltage results indicated that F acted as a shallow donor near the source side in a-IGZO and induced the negative Vth shift. In addition, it was found that when IGZO TFTs with SiNX:F-Pa were annealed 4 h, a low-resistance region was formed at the backchannel of the TFT, leading to a drastic negative Vth shift.

  10. Nonlinear photocurrent-intensity behavior of amorphous InZnO thin film transistors

    Science.gov (United States)

    Lu, Huiling; Zhou, Xiaoliang; Liang, Ting; Zhang, Letao; Zhang, Shengdong

    2018-01-01

    The photocurrent (IPH) of amorphous InZnO thin film transistors in the off-state is investigated as a function of incident optical power (P). The results show that IPH exhibits a nonlinear dependence on P. Additionally, the dependence of IPH on P exhibits a strong photon energy (hυ)-dependent feature. When P is relatively low, IPH is shown to be proportional to Pγ, where γ is greater than 1. The γ > 1 behavior may be ascribed to the source-barrier-lowering effect due to the accumulation of photo-induced positive charges at the source side. When P is relatively high, while IPH remains proportional to Pγ under the incident light with hυ larger than the optical bandgap (Eg) of a-IZO, it turns to increase at an exponential rate with P if hυ of the incident light is smaller than the Eg. The exponential increase in IPH is attributed to the source-barrier-thinning effect, which leads to a significantly enhanced tunneling current.

  11. Substrate temperature effect on the structural anisotropy in amorphous Tb-Fe films

    Science.gov (United States)

    Harris, V. G.; Hellman, F.; Elam, W. T.; Koon, N. C.

    1993-05-01

    Using extended x-ray absorption fine structures (EXAFS) measurements we have investigated the atomic environment around the Fe atom in a series of amorphous Tb0.26Fe0.74 films having different magnetic anisotropy energies owing to different deposition temperatures. The polarization properties of synchrotron radiation allowed the separate study of structure parallel and perpendicular to the sample plane. An anisotropy between these two structures was observed. Modeling results indicate this anisotropy is due to anisotropic pair correlations where the Fe-Fe pairs are statistically preferred in-plane and the Fe-Tb pairs out-of-plane. The amplitude of this anisotropy scales with both the substrate temperature and the magnetic anisotropy energy. A ≊1% in-plane compression of the Fe-Fe distance was measured between the in-plane and out-of-plane structure of the sample grown at 77 K. This sample had no detectable local chemical anisotropy suggesting that intrinsic stress plays an important role in determining its magnetic anisotropy.

  12. Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

    Science.gov (United States)

    Xiao, Xiang; Zhang, Letao; Shao, Yang; Zhou, Xiaoliang; He, Hongyu; Zhang, Shengdong

    2017-12-13

    A room-temperature flexible amorphous indium-gallium-zinc oxide thin film transistor (a-IGZO TFT) technology is developed on plastic substrates, in which both the gate dielectric and passivation layers of the TFTs are formed by an anodic oxidation (anodization) technique. While the gate dielectric Al 2 O 3 is grown with a conventional anodization on an Al:Nd gate electrode, the channel passivation layer Al 2 O 3 is formed using a localized anodization technique. The anodized Al 2 O 3 passivation layer shows a superior passivation effect to that of PECVD SiO 2 . The room-temperature-processed flexible a-IGZO TFT exhibits a field-effect mobility of 7.5 cm 2 /V·s, a subthreshold swing of 0.44 V/dec, an on-off ratio of 3.1 × 10 8 , and an acceptable gate-bias stability with threshold voltage shifts of 2.65 and -1.09 V under positive gate-bias stress and negative gate-bias stress, respectively. Bending and fatigue tests confirm that the flexible a-IGZO TFT also has a good mechanical reliability, with electrical performances remaining consistent up to a strain of 0.76% as well as after 1200 cycles of fatigue testing.

  13. Effect of patch borders on coercivity in amorphous rare earth-transition metal thin films

    Science.gov (United States)

    Patterson, G.; Fu, H.; Giles, R. C.; Mansuripur, M.

    1991-01-01

    The coercivity at the micron scale is a very important property of magneto-optical media. It is a key factor that determines the magnetic domain wall movement and domain reversal. How the coercivity is influenced by a special type of patch borders is discussed. Patch formation is a general phenomenon in growth processes of amorphous rare earth transition metal thin films. Different patches may stem from different seeds and the patch borders are formed when they merge. Though little is known about the exact properties of the borders, we may expect that the exchange interaction at the patch border is weaker than that within a patch, since there is usually a spatial gap between two patches. Computer simulations were performed on a 2-D hexagonal lattice consisting of 37 complete patches with random shape and size. From the series of simulations we may conclude that the domain in the patch with borders of 30 percent exchange strength can expand most easily to the whole lattice, because the exchange strength can expand most easily to the whole lattice, because the exchange strength of the border is not too high to prevent the domain from growing within the patch and it is not too low to prevent the domain from expanding beyond the patch.

  14. Perpendicular Magnetic Anisotropy in Amorphous Ferromagnetic CoSiB/Pd Thin-Film Layered Structures.

    Science.gov (United States)

    Jung, Sol; Yim, Haein

    2015-10-01

    Spin transfer torque (STT) induced switching of magnetization has led to intriguing and practical possibilities for magnetic random access memory (MRAM). This form of memory, called STT-MRAM, is a strong candidate for future memory applications. This application usually requires a large perpendicular magnetic anisotropy (PMA), large coercivity, and low saturation magnetization. Therefore, we propose an amorphous ferromagnetic CoSiB alloy and investigate CoSiB/Pd multilayer thin films, which have a large PMA, large coercivity, and low saturation magnetization. In this research, we propose a remarkable layered structure that could be a candidate for future applications and try to address a few factors that might affect the variation of PMA, coercivity, and saturation magnetization in the CoSiB/Pd multilayers. We investigate the magnetic properties of the CoSiB/Pd multilayers with various thicknesses of the CoSiB layer. The coercivity was obtained with a maximum of 228 Oe and a minimum value of 91 Oe in the [CoSiB 7 Å/Pd 14 Å], and [CoSiB 9 Å/Pd 14 Å], multilayers, respectively. The PMA arises from tCoSiB = 3 Å to tCoSiB = 9 Å and disappears after tCoSiB = 9 Å.

  15. Random magnetic anisotropy in thin films of amorphous Mn48B52

    International Nuclear Information System (INIS)

    Kistenmacher, T.J.; Bryden, W.A.; Moorjani, K.

    1989-01-01

    While crystalline MnB is a ferromagnet (T c =573 K), rf diode-sputtered thin films of composition Mn 48 B 52 are amorphous as ascertained by x-ray scattering and exhibit a low-field, hysteretic, static magnetization peak characteristic of a spin glass. High-field (up to 44 kG) static magnetization data at temperatures ranging between 6 and 200 K are analyzed within the random anisotropy model of Chudnovsky, Saslow, and Serota [Phys. Rev. B 33, 251 (1986)]. In this model, the field-dependent magnetization at a given temperature is expressed as M(H)=M(0)(1-CH -1/2 )+χ'H, where the lead term follows from the analysis of a ferromagnet with a wandering axis (FWA) and the second term accounts for contributions from induced moments. The T 3/2 dependence of the saturation magnetization of the FWA contribution, M(0), at low temperatures is suggestive of spin-wave excitations, while the temperature dependence of the fitting parameters C and χ' consistently identify several characteristic temperatures associated with the magnetic behavior of a-Mn 48 B 52 , including the low-field spin-glass transition temperature and Curie temperature and the curvature crossover temperature (established from a classical Arrott plot) that separates the FWA state and a pseudoparamagnetic limit

  16. Laser Direct Patterning of Organic Dielectric Passivation Layer for Fabricating Amorphous Silicon Thin-Film Transistors

    Science.gov (United States)

    Chen, Chao-Nan; Su, Kuo-Hui; Chen, Yeong-Chin

    2011-06-01

    In this study, a laser direct patterning process application in benzocyclobutene (BCB) organic dielectric passivation-based amorphous silicon (a-Si) thin film transistor (TFT) device fabrication has been carried out using a KrF excimer laser. A BCB organic photoresist material of 2000 nm with a dielectric constant = 2.7 served as the dielectric passivation layer in our device. Compared with conventional processes, laser direct patterning combining BCB organic photoresist dielectric passivation could eliminate at least four process steps. The etching depth of the BCB organic material passivation layer depends on the laser energy density and number of irradiation shots. The hydrogenated a-Si TFT devices are fabricated by replacing the passivation layer and contact hole patterning process. The mobility and threshold voltage reached 0.16 cm2 V-1 s-1 and -3.5 V, respectively. For TFT device performance, laser direct patterning technology is a potential method of replacing photolithography technology in the application of BCB organic dielectric passivation-based TFT manufacture.

  17. Giant Strain and Induced Ferroelectricity in Amorphous BaTiO3 Films under Poling

    Directory of Open Access Journals (Sweden)

    Pegah Mirzadeh Vaghefi

    2017-09-01

    Full Text Available We report an effect of giant surface modification of a 5.6 nm thick BaTiO3 film grown on Si (100 substrate under poling by conductive tip of a scanning probe microscope (SPM. The surface can be locally elevated by about 9 nm under −20 V applied during scanning, resulting in the maximum strain of 160%. The threshold voltage for the surface modification is about 12 V. The modified topography is stable enough with time and slowly decays after poling with the rate ~0.02 nm/min. Strong vertical piezoresponse after poling is observed, too. Combined measurements by SPM and piezoresponse force microscopy (PFM prove that the poled material develops high ferroelectric polarization that cannot be switched back even under an oppositely oriented electric field. The topography modification is hypothesized to be due to a strong Joule heating and concomitant interface reaction between underlying Si and BaTiO3. The top layer is supposed to become ferroelectric as a result of local crystallization of amorphous BaTiO3. This work opens up new possibilities to form nanoscale ferroelectric structures useful for various applications.

  18. Optical properties of amorphous hydrogenated and microcrystalline silicon films prepared by plasma enhanced chemical vapor deposition and re-crystallized at moderate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Netrvalova, Marie; Prusakova, Lucie; Sutta, Pavol [New Technologies - Research Centre, University of West Bohemia, Univerzitni 8, 30614 Plzen (Czech Republic); Mullerova, Jarmila [Faculty of Electrical Engineering, University of Zilina, ul. kpt. J. Nalepku 1390, 03101 Liptovsky Mikulas (Slovakia)

    2011-09-15

    Amorphous hydrogenated silicon films different in thickness (600 - 2400 nm) were deposited by plasma enhanced chemical vapour deposition on Corning glass substrates at 250 C using silan 10% / argon 90% gas mixture. The samples were consequently isothermally heated in a high temperature vacuum chamber at 0.1 Pa and at temperatures from 580 to 620 C. In order to evaluate structural and optical properties of the films X-ray diffraction analysis, Raman spectrometry and optical spectrophotometry were used. Crystalline state (amorphous or microcrystalline), optical band gaps, refractive indices, extinction coefficients, absorption coefficients were determined. X-ray diffraction analysis indicated that originally deposited films were amorphous with different degree of homogeneity depending on the film thickness. After the heat treatment the films became polycrystalline with crystallite sizes 40-50 nm without particular dependence on the recrystallization process used. Raman spectrometry confirmed the results obtained from X-ray diffraction and furthermore revealed the residual amorphous phase 20-25% in volume. Optical spectrophotometry has shown that the values of refractive indices of thermally treated films approach the mono-crystalline silicon refractive index. Extinction coefficients of the thermally treated films are slightly higher than those for monocrystalline silicon. Absorption coefficients for thermally treated films reached quite high values near the absorption edge of the original amorphous material, which can be advantageous for tandem solar cell technologies. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Distinct Short-Range Order Is Inherent to Small Amorphous Calcium Carbonate Clusters (<2 nm)

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Shengtong [Physical Chemistry, University of Konstanz, Universitätsstrasse 10 78457 Konstanz Germany; School of Chemical Engineering, State Key Laboratory of Chemical Engineering, Shanghai Key Laboratory of Multiphase Materials Chemical Engineering, East China University of Science and Technology, 130 Meilong Road Shanghai 200237 P.R. China; Chevrier, Daniel M. [Department of Chemistry and Institute for Research in Materials, Dalhousie University, Halifax Nova Scotia B3H 4R2 Canada; Zhang, Peng [Department of Chemistry and Institute for Research in Materials, Dalhousie University, Halifax Nova Scotia B3H 4R2 Canada; Gebauer, Denis [Physical Chemistry, University of Konstanz, Universitätsstrasse 10 78457 Konstanz Germany; Cölfen, Helmut [Physical Chemistry, University of Konstanz, Universitätsstrasse 10 78457 Konstanz Germany

    2016-09-09

    Amorphous intermediate phases are vital precursors in the crystallization of many biogenic minerals. While inherent short-range orders have been found in amorphous calcium carbonates (ACCs) relating to different crystalline forms, it has never been clarified experimentally whether such orders already exist in very small clusters less than 2 nm in size. Here, we studied the stability and structure of 10,12-pentacosadiynoic acid (PCDA) protected ACC clusters with a core size of ca. 1.4 nm consisting of only seven CaCO3 units. Ligand concentration and structure are shown to be key factors in stabilizing the ACC clusters. More importantly, even in such small CaCO3 entities, a proto-calcite short-range order can be identified but with a relatively high degree of disorder that arises from the very small size of the CaCO3 core. Our findings support the notion of a structural link between prenucleation clusters, amorphous intermediates, and final crystalline polymorphs, which appears central to the understanding of polymorph selection.

  20. Measurement and Analysis of Composition and Depth Profile of H in Amorphous Si1−xCx:H Films

    International Nuclear Information System (INIS)

    Wei, Hua; Shu-De, Yao; Kun, Wang; Zhi-Bo, Ding

    2008-01-01

    Composition in amorphous Si 1−X C x :H heteroepitaxial thin films on Si (100) by plasma enhanced chemical vapour deposition (PECVD) is analysed. The unknown x (0.45–0.57) and the depth profile of hydrogen in the thin films are characterized by Rutherford backscattering spectrum (RBS), resonance-nuclear reaction analysis (R-NRA) and elastic recoil detection (ERD), respectively. In addition, the depth profile of hydrogen in the unannealed thin films is compared to that of the annealed thin films with rapid thermal annealing (RTA) or laser spike annealing (LSA) in nitrogen atmosphere. The results indicate that the stoichiometric amorphous SiC can be produced by PECVD when the ratio of CH 4 /SiH 4 is approximately equal to 25. The content of hydrogen decreases suddenly from 35% to 1% after 1150° C annealing. RTA can reduce hydrogen in SiC films effectively than LSA. (cross-disciplinary physics and related areas of science and technology)

  1. Interactions of Endoglucanases with Amorphous Cellulose Films Resolved by Neutron Reflectometry and Quartz Crystal Microbalance with Dissipation Monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Gang [Joint BioEnergy Inst. (JBEI), Emeryville, CA (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Datta, Supratim [Joint BioEnergy Inst. (JBEI), Emeryville, CA (United States); Liu, Zelin [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States). Dept. of Chemistry; Wang, Chao [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States). Dept. of Chemistry; Murton, Jaclyn K. [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Brown, Page A. [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Jablin, Michael S. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Dubey, Manish [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Majewski, Jaroslaw [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Halbert, Candice E. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Spallation Neutron Source (SNS); Browning, James F. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Spallation Neutron Source (SNS); Esker, Alan R. [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States). Dept. of Chemistry; Watson, Brian J. [Univ. of Maryland, College Park, MD (United States). Dept. of Cell Biology and Molecular Genetics; Zhang, Haito [Univ. of Maryland, College Park, MD (United States). Dept. of Cell Biology and Molecular Genetics; Hutcheson, Steven W. [Univ. of Maryland, College Park, MD (United States). Dept. of Cell Biology and Molecular Genetics; Huber, Dale L. [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Sale, Kenneth L. [Joint BioEnergy Inst. (JBEI), Emeryville, CA (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Simmons, Blake A. [Joint BioEnergy Inst. (JBEI), Emeryville, CA (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Kent, Michael S. [Joint BioEnergy Inst. (JBEI), Emeryville, CA (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2012-05-03

    A study of the interaction of four endoglucanases with amorphous cellulose films by neutron reflectometry (NR) and quartz crystal microbalance with dissipation monitoring (QCM-D) is reported. The endoglucanases include a mesophilic fungal endoglucanase (Cel45A from H. insolens), a processive endoglucanase from a marine bacterium (Cel5H from S. degradans), and two from thermophilic bacteria (Cel9A from A. acidocaldarius and Cel5A from T. maritima). The use of amorphous cellulose is motivated by the promise of ionic liquid pretreatment as a second generation technology that disrupts the native crystalline structure of cellulose. The endoglucanases displayed highly diverse behavior. Cel45A and Cel5H, which possess carbohydrate-binding modules (CBMs), penetrated and digested within the bulk of the films to a far greater extent than Cel9A and Cel5A, which lack CBMs. While both Cel45A and Cel5H were active within the bulk of the films, striking differences were observed. With Cel45A, substantial film expansion and interfacial broadening were observed, whereas for Cel5H the film thickness decreased with little interfacial broadening. Lastly, these results are consistent with Cel45A digesting within the interior of cellulose chains as a classic endoglucanase, and Cel5H digesting predominantly at chain ends consistent with its designation as a processive endoglucanase.

  2. Magnetic properties of iron-based amorphous and nanocrystalline Fe-Zr-X-B (X: Cu, Al) alloy films

    International Nuclear Information System (INIS)

    Goscianska, I.; Tolinski, T.; Ratajczak, H.; Sovak, P.; Dlugos, R.; Konc, M.

    2000-01-01

    Thermal stability and magnetic properties of thin films, of a few Fe-based amorphous and nanocrystalline alloys, have been studied. The alloys belong to the class Fe-M-B, whose representatives are Fe 87 Zr 4 CuB 8 , Fe 87 Zr 7 B 6 , and Fe 87 Zr 7 AlB 5 and are of particular interest because of their wide variety of magnetic properties. The films were prepared by flash evaporation onto liquid nitrogen cooled substrates. Measurements of the Kerr effect, the Hall effect, and ferromagnetic resonance in the films were carried out as functions of the annealing temperature. It was found that the changes in the coercive field H c , resonance linewidth ΔH pp , effective magnetization M eff , Hall parameters, and resistance were correlated with the structural changes in the studied films. (author)

  3. High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

    KAUST Repository

    Nayak, Pradipta K.

    2012-05-16

    Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors(TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.

  4. Codoping of zinc and tungsten for practical high-performance amorphous indium-based oxide thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kizu, Takio, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Tsukagoshi, Kazuhito, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Miyanaga, Miki; Awata, Hideaki [Advanced Materials R& D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koyakita, Itami, Hyogo 664-0016 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2015-09-28

    Using practical high-density sputtering targets, we investigated the effect of Zn and W codoping on the thermal stability of the amorphous film and the electrical characteristics in thin film transistors. zinc oxide is a potentially conductive component while W oxide is an oxygen vacancy suppressor in oxide films. The oxygen vacancy from In-O and Zn-O was suppressed by the W additive because of the high oxygen bond dissociation energy. With controlled codoping of W and Zn, we demonstrated a high mobility with a maximum mobility of 40 cm{sup 2}/V s with good stability under a negative bias stress in InWZnO thin film transistors.

  5. Strength and tribology of bulk and electroformed nickel amorphized by implantation of titanium and carbon

    International Nuclear Information System (INIS)

    Myers, S.M.; Knapp, J.A.; Follstaedt, D.M.; Dugger, M.T.; Christenson, T.R.

    1997-01-01

    Dual ion implantation of titanium and carbon was shown to produce an amorphous layer of exceptional strength within annealed bulk Ni and electroformed Ni and Ni 80 Fe 20 materials used in micro-electromechanical systems. The intrinsic elastic and plastic mechanical properties of the implanted region were quantified using nanoindentation testing in conjunction with finite-element modeling, and the results were interpreted in the light of microstructures observed by electron microscopy. The implantation treatment was found to produce substantial reductions in unlubricated friction and wear

  6. Capillarity creates single-crystal calcite nanowires from amorphous calcium carbonate.

    Science.gov (United States)

    Kim, Yi-Yeoun; Hetherington, Nicola B J; Noel, Elizabeth H; Kröger, Roland; Charnock, John M; Christenson, Hugo K; Meldrum, Fiona C

    2011-12-23

    Single-crystal calcite nanowires are formed by crystallization of morphologically equivalent amorphous calcium carbonate (ACC) particles within the pores of track etch membranes. The polyaspartic acid stabilized ACC is drawn into the membrane pores by capillary action, and the single-crystal nature of the nanowires is attributed to the limited contact of the intramembrane ACC particle with the bulk solution. The reaction environment then supports transformation to a single-crystal product. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Precipitation of Co(2+) carbonates from aqueous solution: insights on the amorphous to crystalline transformation.

    Science.gov (United States)

    González-López, Jorge; Fernández-González, Ángeles; Jiménez, Amalia

    2016-04-01

    Cobalt is toxic metal that is present only as a trace in the Earth crust. However, Co might concentrate on specific areas due to both natural and anthropogenic factors and thus, soils and groundwater can be contaminated. It is from this perspective that we are interested in the precipitation of cobalt carbonates, since co-precipitation with minerals phases is a well-known method for metal immobilization in the environment. In particular, the carbonates are widely used due to its reactivity and natural abundance. In order to evaluate the cobalt carbonate precipitation at room temperature, a simple experimental work was carried out in this work. The precipitation occurred via reaction of two common salts: 0.05M of CoCl2 and 0.05M of Na2CO3 in aqueous solution. After reaction, the precipitated solid was kept in the remaining water at 25 oC and under constant stirring for different aging times of 5 min, 1 and 5 hours, 1, 2, 4, 7, 30 and 60 days. In addition to the aging and precipitation experiments, we carried out experiments to determine the solubility of the solids. In these experiments each precipitate was dissolved in Milli-Q water until equilibrium was reached and then the aqueous solution was analyzed regarding Co2+ and total alkalinity. Furthermore, acid solution calorimetry of the products were attained. Finally, we modeled the results using the PHREEQC code. Solid and aqueous phase identification and characterization have been extensively reported in a previous work (González-López et al., 2015). The main results of our investigation were the initial precipitation of an amorphous cobalt carbonate that evolve towards a poorly crystalline cobalt hydroxide carbonate with aging treatment. Solubility of both phases have been calculated under two different approaches: precipitation and dissolution. Values of solubility from each approach were obtained with a general error due to differences in experiment conditions, for instance, ionic strength, temperature and

  8. Vertical electric field stimulated neural cell functionality on porous amorphous carbon electrodes.

    Science.gov (United States)

    Jain, Shilpee; Sharma, Ashutosh; Basu, Bikramjit

    2013-12-01

    We demonstrate the efficacy of amorphous macroporous carbon substrates as electrodes to support neuronal cell proliferation and differentiation in electric field mediated culture conditions. The electric field was applied perpendicular to carbon substrate electrode, while growing mouse neuroblastoma (N2a) cells in vitro. The placement of the second electrode outside of the cell culture medium allows the investigation of cell response to electric field without the concurrent complexities of submerged electrodes such as potentially toxic electrode reactions, electro-kinetic flows and charge transfer (electrical current) in the cell medium. The macroporous carbon electrodes are uniquely characterized by a higher specific charge storage capacity (0.2 mC/cm(2)) and low impedance (3.3 kΩ at 1 kHz). The optimal window of electric field stimulation for better cell viability and neurite outgrowth is established. When a uniform or a gradient electric field was applied perpendicular to the amorphous carbon substrate, it was found that the N2a cell viability and neurite length were higher at low electric field strengths (≤ 2.5 V/cm) compared to that measured without an applied field (0 V/cm). While the cell viability was assessed by two complementary biochemical assays (MTT and LDH), the differentiation was studied by indirect immunostaining. Overall, the results of the present study unambiguously establish the uniform/gradient vertical electric field based culture protocol to either enhance or to restrict neurite outgrowth respectively at lower or higher field strengths, when neuroblastoma cells are cultured on porous glassy carbon electrodes having a desired combination of electrochemical properties. Copyright © 2013 Elsevier Ltd. All rights reserved.

  9. Cell survival in carbon beams - comparison of amorphous track model predictions

    DEFF Research Database (Denmark)

    Grzanka, L.; Greilich, S.; Korcyl, M.

    distribution models, and gamma response models was developed. This software can be used for direct numerical comparison between the models, submodels and their parameters and experimental data. In the present paper, we look at 10%-survival data from cell lines irradiated in vitro with carbon and proton beams...... neutrons, stopped pions, and heavy ion beams. Nucl Instrum Meth. 1973;111:93-116. 2.Weyrather WK, Kraft G. RBE of carbon ions: experimental data and the strategy of RBE calculation for treatment planning. Radiother Oncol. 2004;73(Suppl 2):161-9. 3.Greilich S, Grzanka L, Bassler N, Andersen CE, Jäkel O...... irradiation. The aim of this paper is to compare the predictions from different amorphous approaches found in the literature - more specifically the phenomenological, analytical model by Katz and co-workers [1] and a Monte-Carlo based full as implemented for example in the local effect model by Scholz et al...

  10. Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride

    Directory of Open Access Journals (Sweden)

    Buiculescu Raluca

    2011-01-01

    Full Text Available Abstract The electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride is studied by measuring the voltage and temperature dependences of the current. The microstructure of the network is investigated by cross-sectional transmission electron microscopy. The multi-walled carbon nanotube network has an uniform spatial extension in the silicon nitride matrix. The current-voltage and resistance-temperature characteristics are both linear, proving the metallic behavior of the network. The I-V curves present oscillations that are further analyzed by computing the conductance-voltage characteristics. The conductance presents minima and maxima that appear at the same voltage for both bias polarities, at both 20 and 298 K, and that are not periodic. These oscillations are interpreted as due to percolation processes. The voltage percolation thresholds are identified with the conductance minima.

  11. Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films

    CERN Document Server

    Mantovan, R.; Mokhles Gerami, A.; Mølholt, T. E.; Wiemer, C.; Longo, M.; Gunnlaugsson, H. P.; Johnston, K.; Masenda, H.; Naidoo, D.; Ncube, M.; Bharuth-Ram, K.; Fanciulli, M.; Gislason, H. P.; Langouche, G.; Ólafsson, S.; Weyer, G.

    The underlying mechanism driving the structural amorphous-to-crystalline transition in Group VI chalcogenides is still a matter of debate even in the simplest GeTe system. We exploit the extreme sensitivity of 57Fe emission Mössbauer spectroscopy, following dilute implantation of 57Mn (T½ = 1.5 min) at ISOLDE/CERN, to study the electronic charge distribution in the immediate vicinity  of the 57Fe probe substituting Ge (FeGe), and to interrogate the local environment of FeGe over the amorphous-crystalline phase transition in GeTe thin films. Our results show that the local structure  of as-sputtered amorphous GeTe is a combination of tetrahedral and defect-octahedral sites. The main effect of the crystallization is the conversion from tetrahedral to defect-free octahedral sites.  We discover that only the tetrahedral fraction in amorphous GeTe participates to the change of the FeGe-Te chemical bond...

  12. Electrochemical treatment of domestic wastewater using boron-doped diamond and nanostructured amorphous carbon electrodes.

    Science.gov (United States)

    Daghrir, Rimeh; Drogui, Patrick; Tshibangu, Joel; Delegan, Nazar; El Khakani, My Ali

    2014-05-01

    The performance of the electrochemical oxidation process for efficient treatment of domestic wastewater loaded with organic matter was studied. The process was firstly evaluated in terms of its capability of producing an oxidant agent (H2O2) using amorphous carbon (or carbon felt) as cathode, whereas Ti/BDD electrode was used as anode. Relatively high concentrations of H2O2 (0.064 mM) was produced after 90 min of electrolysis time, at 4.0 A of current intensity and using amorphous carbon at the cathode. Factorial design and central composite design methodologies were successively used to define the optimal operating conditions to reach maximum removal of chemical oxygen demand (COD) and color. Current intensity and electrolysis time were found to influence the removal of COD and color. The contribution of current intensity on the removal of COD and color was around 59.1 and 58.8%, respectively, whereas the contribution of treatment time on the removal of COD and color was around 23.2 and 22.9%, respectively. The electrochemical treatment applied under 3.0 A of current intensity, during 120 min of electrolysis time and using Ti/BDD as anode, was found to be the optimal operating condition in terms of cost/effectiveness. Under these optimal conditions, the average removal rates of COD and color were 78.9 ± 2 and 85.5 ± 2 %, whereas 70% of total organic carbon removal was achieved.

  13. Transformation of Mg-bearing amorphous calcium carbonate to Mg-calcite - In situ monitoring

    Science.gov (United States)

    Purgstaller, Bettina; Mavromatis, Vasileios; Immenhauser, Adrian; Dietzel, Martin

    2016-02-01

    The formation of Mg-bearing calcite via an amorphous precursor is a poorly understood process that is of relevance for biogenic and abiogenic carbonate precipitation. In order to gain an improved insight on the controls of Mg incorporation in calcite formed via an Mg-rich amorphous calcium carbonate (Mg-ACC) precursor, the precipitation of Mg-ACC and its transformation to Mg-calcite was monitored by in situ Raman spectroscopy. The experiments were performed at 25.0 ± 0.03 °C and pH 8.3 ± 0.1 and revealed two distinct pathways of Mg-calcite formation: (i) At initial aqueous Mg/Ca molar ratios ⩽ 1:6, Mg-calcite formation occurs via direct precipitation from solution. (ii) Conversely, at higher initial Mg/Ca molar ratios, Mg-calcite forms via an intermediate Mg-rich ACC phase. In the latter case, the final product is a calcite with up to 20 mol% Mg. This Mg content is significant higher than that of the Mg-rich ACC precursor phase. Thus, a strong net uptake of Mg ions from the solution into the crystalline precipitate throughout and also subsequent to ACC transformation is postulated. Moreover, the temporal evolution of the geochemical composition of the reactive solution and the Mg-ACC has no significant effect on the obtained ;solubility product; of Mg-ACC. The enrichment of Mg in calcite throughout and subsequent to Mg-ACC transformation is likely affected by the high aqueous Mg/Ca ratio and carbonate alkalinity concentrations in the reactive solution. The experimental results have a bearing on the formation mechanism of Mg-rich calcites in marine early diagenetic environments, where high carbonate alkalinity concentrations are the rule rather than the exception, and on the insufficiently investigated inorganic component of biomineralisation pathways in many calcite secreting organisms.

  14. Characteristics of diamond – like carbon(DLC film deposited by PACVD process

    Directory of Open Access Journals (Sweden)

    Krzysztof Lukaszkowicz

    2016-10-01

    Full Text Available Diamond – like carbon (DLC film is promising materials for many technical and engineering applications. DLC films are used in many different industries for example: in medicine, in electronics, in optics and the automotive industry. They have excellent tribological properties (low friction coefficient, chemical inertness and high mechanical hardness. This paper provides an analysis of the microstructure, mechanical and tribological properties of DLC films. In the study of the coating used several surface sensitive techniques and methods, i.e. High Resolution Transmission Electron Microscopy (HRTEM, Scanning Electron Microscopy (SEM, Raman spectroscopy and tribological tests like ball-on-disc. HRTEM investigation shows an amorphous character of DLC layer. In sliding dry friction conditions the friction coefficient for the investigated elements is set in the range between 0.02-0.03. The investigated coating reveals high wear resistance. The coating demonstrated a good adhesion to the substrate.

  15. Reactive diffusion in amorphous Fe-B and Co-Zr multilayer films

    International Nuclear Information System (INIS)

    Stobiecki, F.

    1989-01-01

    The diffusion in Fe 1-x B x /Fe 1-y B y and Co 1-x Zr x /Co 1-y Zr y amorphous bi- and multilayers was investigated. The dependence of the diffusion coefficient on concentration was observed. This effect is explained taking into account the concentration dependence of mixing enthalpy correlated with chemical short range order in the amorphous state

  16. Diamond-Like Carbon Film Deposition Using DC Ion Source with Cold Hollow Cathode

    Directory of Open Access Journals (Sweden)

    E. F. Shevchenko

    2014-01-01

    Full Text Available Carbon diamond-like thin films on a silicon substrate were deposited by direct reactive ion beam method with an ion source based on Penning direct-current discharge system with cold hollow cathode. Deposition was performed under various conditions. The pressure (12–200 mPa and the plasma-forming gas composition consisting of different organic compounds and hydrogen (C3H8, CH4, Si(CH32Cl2, H2, the voltage of accelerating gap in the range 0.5–5 kV, and the substrate temperature in the range 20–850°C were varied. Synthesized films were researched using nanoindentation, Raman, and FTIR spectroscopy methods. Analysis of the experimental results was made in accordance with a developed model describing processes of growth of the amorphous and crystalline carbon materials.

  17. Neutron Reflectometry and QCM-D Study of the Interaction of Cellulase Enzymes with Films of Amorphous Cellulose

    International Nuclear Information System (INIS)

    Halbert, Candice E.; Ankner, John Francis; Kent, Michael S.; Jaclyn, Murton K.; Browning, Jim; Cheng, Gang; Liu, Zelin; Majewski, Jaroslaw; Supratim, Datta; Michael, Jablin; Bulent, Akgun; Alan, Esker; Simmons, Blake

    2011-01-01

    Improving the efficiency of enzymatic hydrolysis of cellulose is one of the key technological hurdles to reduce the cost of producing ethanol and other transportation fuels from lignocellulosic material. A better understanding of how soluble enzymes interact with insoluble cellulose will aid in the design of more efficient enzyme systems. We report a study involving neutron reflectometry (NR) and quartz crystal microbalance with dissipation (QCM-D) of the interaction of a commercial fungal enzyme extract (T. viride), two purified endoglucanses from thermophilic bacteria (Cel9A from A. acidocaldarius and Cel5A from T. maritima), and a mesophilic fungal endoglucanase (Cel45A from H. insolens) with amorphous cellulose films. The use of amorphous cellulose is motivated by the promise of ionic liquid pretreatment as a second generation technology that disrupts the native crystalline structure of cellulose. NR reveals the profile of water through the film at nm resolution, while QCM-D provides changes in mass and film stiffness. At 20 C and 0.3 mg/ml, the T. viride cocktail rapidly digested the entire film, beginning from the surface followed by activity throughout the bulk of the film. For similar conditions, Cel9A and Cel5A were active for only a short period of time and only at the surface of the film, with Cel9A releasing 40 from the ∼ 700 film and Cel5A resulting in only a slight roughening/swelling effect at the surface. Subsequent elevation of the temperature to the Topt in each case resulted in a very limited increase in activity, corresponding to the loss of an additional 60 from the film for Cel9A and 20 from the film for Cel5A, and very weak penetration into and digestion within the bulk of the film, before the activity again ceased. The results for Cel9A and Cel5A contrast sharply with results for Cel45A where very rapid and extensive penetration and digestion within the bulk of the film was observed at 20 C. We speculate that the large differences are due

  18. Neutron Reflectometry and QCM-D Study of the Interaction of Cellulase Enzymes with Films of Amorphous Cellulose

    Energy Technology Data Exchange (ETDEWEB)

    Halbert, Candice E [ORNL; Ankner, John Francis [ORNL; Kent, Michael S [Sandia National Laboratories (SNL); Jaclyn, Murton K [Sandia National Laboratories (SNL); Browning, Jim [ORNL; Cheng, Gang [Joint Bioenergy Institute; Liu, Zelin [Virginia Polytechnic Institute and State University (Virginia Tech); Majewski, Jaroslaw [Los Alamos National Laboratory (LANL); Supratim, Datta [Joint Bioenergy Institute; Michael, Jablin [Los Alamos National Laboratory (LANL); Bulent, Akgun [NIST Center for Neutron Research (NCRN), Gaithersburg, MD; Alan, Esker [Virginia Polytechnic Institute and State University (Virginia Tech); Simmons, Blake [Sandia National Laboratories (SNL)

    2011-01-01

    Improving the efficiency of enzymatic hydrolysis of cellulose is one of the key technological hurdles to reduce the cost of producing ethanol and other transportation fuels from lignocellulosic material. A better understanding of how soluble enzymes interact with insoluble cellulose will aid in the design of more efficient enzyme systems. We report a study involving neutron reflectometry (NR) and quartz crystal microbalance with dissipation (QCM-D) of the interaction of a commercial fungal enzyme extract (T. viride), two purified endoglucanses from thermophilic bacteria (Cel9A from A. acidocaldarius and Cel5A from T. maritima), and a mesophilic fungal endoglucanase (Cel45A from H. insolens) with amorphous cellulose films. The use of amorphous cellulose is motivated by the promise of ionic liquid pretreatment as a second generation technology that disrupts the native crystalline structure of cellulose. NR reveals the profile of water through the film at nm resolution, while QCM-D provides changes in mass and film stiffness. At 20 oC and 0.3 mg/ml, the T. viride cocktail rapidly digested the entire film, beginning from the surface followed by activity throughout the bulk of the film. For similar conditions, Cel9A and Cel5A were active for only a short period of time and only at the surface of the film, with Cel9A releasing 40 from the ~ 700 film and Cel5A resulting in only a slight roughening/swelling effect at the surface. Subsequent elevation of the temperature to the Topt in each case resulted in a very limited increase in activity, corresponding to the loss of an additional 60 from the film for Cel9A and 20 from the film for Cel5A, and very weak penetration into and digestion within the bulk of the film, before the activity again ceased. The results for Cel9A and Cel5A contrast sharply with results for Cel45A where very rapid and extensive penetration and digestion within the bulk of the film was observed at 20 C. We speculate that the large differences are due

  19. Surface treatment on amorphous InGaZnO4 thin film for single-stranded DNA biosensing

    Science.gov (United States)

    Sun, Dali; Matsui, Hiroaki; Wu, Chun-Nan; Tabata, Hitoshi

    2015-01-01

    Amorphous InGaZnO4 (aIGZO) has been widely used as a transparent semiconductor. However, no research has been found yet applying aIGZO to biosensing. This paper examined the single strand DNA (ssDNA) immobilization on aIGZO by absorption with a comparison to ITO, which is the first step for many biosensing schemas. The DNA quantification by florescence intensity shows that the absorption capacity of aIGZO film to ssDNA is 6.7 times greater than that of ITO. XPS and contact angle analysis proved the high DNA absorption affinity on aIGZO film is related to its high effectiveness to OH- attachment. A feasible method to immobilized ssDNA on aIGZO thin film is evaluated in this paper, and consequently, enables a possible approach to apply aIGZO in biosensing.

  20. In situ X-ray diffraction study of solid state transformations during catalytic graphitisation of amorphous carbon

    CERN Document Server

    Krivoruchko, O P; Zaikovskii, V I

    2001-01-01

    Here we report on the results of an in situ X-ray diffraction study of phase transformations during catalytic graphitisation of amorphous carbon. It is demonstrated that there is unusual change of iron catalyst reflection intensity at low temperature approx 640 deg. C. This unusual intensity change may possibly be caused by the transition of some part of metal into liquid state at low temperature. It was also shown by electron microscopy that although no graphite reflections were detected 80-90% of amorphous carbon becomes graphite after sample heating in a high temperature vacuum chamber.

  1. Textured Sb2Te3 films and GeTe/Sb2Te3 superlattices grown on amorphous substrates by molecular beam epitaxy

    NARCIS (Netherlands)

    Boschker, Jos E.; Tisbi, E.; Placidi, E.; Momand, Jamo; Redaelli, Andrea; Kooi, Bart J.; Arciprete, Fabrizio; Calarco, Raffaella

    The realization of textured films of 2-dimensionally (2D) bonded materials on amorphous substrates is important for the integration of this material class with silicon based technology. Here, we demonstrate the successful growth by molecular beam epitaxy of textured Sb2Te3 films and GeTe/Sb2Te3

  2. Reversible electrical resistance switching in GeSbTe thin films : An electrolytic approach without amorphous-crystalline phase-change

    NARCIS (Netherlands)

    Pandian, Ramanathaswamy; Kooi, Bart J.; Palasantzas, George; De Hosson, Jeff Th. M.; Wouters, DJ; Hong, S; Soss, S; Auciello, O

    2008-01-01

    Besides the well-known resistance switching originating from the amorphous-crystalline phase-change in GeSbTe thin films, we demonstrate another switching mechanism named 'polarity-dependent resistance (PDR) switching'. 'Me electrical resistance of the film switches between a low- and high-state

  3. Anisotropy, magnetostriction and local chemical order in amorphous TbxFe1-x (0.1films

    International Nuclear Information System (INIS)

    Hernando, A.; Prados, C.; Prieto, C.

    1996-01-01

    Local chemical order in amorphous TbFe thin films has been investigated in a variety of compositions, using EXAFS, magnetostriction and anisotropy measurements. Data reported here are consistent with a density of Fe-Tb pairs in the film plane larger than in the perpendicular direction. (orig.)

  4. Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs).

    Science.gov (United States)

    Kim, Choong-Ki; Kim, Eungtaek; Lee, Myung Keun; Park, Jun-Young; Seol, Myeong-Lok; Bae, Hagyoul; Bang, Tewook; Jeon, Seung-Bae; Jun, Sungwoo; Park, Sang-Hee K; Choi, Kyung Cheol; Choi, Yang-Kyu

    2016-09-14

    An electro-thermal annealing (ETA) method, which uses an electrical pulse of less than 100 ns, was developed to improve the electrical performance of array-level amorphous-oxide-semiconductor (AOS) thin-film transistors (TFTs). The practicality of the ETA method was experimentally demonstrated with transparent amorphous In-Ga-Zn-O (a-IGZO) TFTs. The overall electrical performance metrics were boosted by the proposed method: up to 205% for the trans-conductance (gm), 158% for the linear current (Ilinear), and 206% for the subthreshold swing (SS). The performance enhancement were interpreted by X-ray photoelectron microscopy (XPS), showing a reduction of oxygen vacancies in a-IGZO after the ETA. Furthermore, by virtue of the extremely short operation time (80 ns) of ETA, which neither provokes a delay of the mandatory TFTs operation such as addressing operation for the display refresh nor demands extra physical treatment, the semipermanent use of displays can be realized.

  5. Atomic force microscopy measurements of crystal nucleation and growth rates in thin films of amorphous Te alloys

    Science.gov (United States)

    Kalb, J.; Spaepen, F.; Wuttig, M.

    2004-06-01

    Ex situ atomic force microscopy in combination with a high-precision furnace has been employed for a systematic study of crystallization kinetics of sputtered amorphous Ag0.055In0.065Sb0.59Te0.29, Ge4Sb1Te5, and Ge2Sb2Te5 thin films used for optical data storage. Direct observation of crystals enabled us to establish the temperature dependence of the crystal nucleation rate and crystal growth velocity around 150°C. While these alloys exhibited similar crystal growth characteristics, the crystal nucleation behavior of Ag0.055In0.065Sb0.59Te0.29 differed significantly from that of Ge4Sb1Te5 and Ge2Sb2Te5. These observations provide an explanation for the different recrystallization mechanisms observed upon laser heating of amorphous marks.

  6. Electromagnetic wave absorption properties of composites with micro-sized magnetic particles dispersed in amorphous carbon

    Energy Technology Data Exchange (ETDEWEB)

    Li, Bin Peng [Research Center of Carbon Fiber, Key Laboratory for Liquid–Solid Structural Evolution and Processing of Materials of Ministry of Education, Shandong University, Jinan 250061 (China); Tianjin Binhai New Area Finance Bureau, Tianjin 300450 (China); Wang, Cheng Guo, E-mail: sduwangchg@gmail.com [Research Center of Carbon Fiber, Key Laboratory for Liquid–Solid Structural Evolution and Processing of Materials of Ministry of Education, Shandong University, Jinan 250061 (China); Wang, Wen [Norinco Group China North Material Science and Engineering Technology Group Corporation, Jinan 250031 (China); Yu, Mei Jie; Gao, Rui; Chen, Yang; Xiang Wang, Yan [Research Center of Carbon Fiber, Key Laboratory for Liquid–Solid Structural Evolution and Processing of Materials of Ministry of Education, Shandong University, Jinan 250061 (China)

    2014-09-01

    Composites with micro-sized magnetic particles dispersed in amorphous carbon were fabricated conveniently and economically by carbonizing polyacrylonitrile (PAN) fibers mixed with micro-sized iron particles under different temperatures. The composites were characterized by X-ray diffraction (XRD) and scanning electric microscope (SEM). The electromagnetic (EM) properties were measured by a vector network analyzer in the frequency range of 2–18 GHz based on which analog computations of EM wave absorption properties were carried out. The influences of temperature on phase composition and EM wave absorption properties were also investigated, indicating that the composites had good electromagnetic absorption properties with both electrical loss and magnetic loss. Effective reflection loss (RL<−10 dB) was observed in a large frequency range of 7.5–18 GHz with the absorber thickness of 2.0–3.0 mm for the paraffin samples with composite powders heated up to 750 °C and the minimum absorption peak around −40 dB appeared at approximately 10 GHz with matching thickness of 2.0 mm for the paraffin sample with composite powders heated up to 800 °C. - Highlights: • High-performance electromagnetic wave absorption materials were fabricated conveniently and economically. • The materials are composites with micro-sized magnetic particles dispersed in porous amorphous carbon. • The influences of temperature on phase composition and electromagnetic wave absorption properties were investigated. • The composites heated up to 750 °C and 800 °C had good electromagnetic wave absorption property.

  7. Study on effects of carbon impurities and oxygen vacancies in amorphous alumina phosphor prepared via a solution method

    Energy Technology Data Exchange (ETDEWEB)

    Wakui, Yoshinori; Takahashi, Kanako [Department of Material and Environmental Chemistry, Graduate School of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya-shi, Tochigi 321-8585 (Japan); Shan, Yue Jin, E-mail: shan@cc.utsunomiya-u.ac.jp [Department of Material and Environmental Chemistry, Graduate School of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya-shi, Tochigi 321-8585 (Japan); Tezuka, Keitaro; Imoto, Hideo [Department of Material and Environmental Chemistry, Graduate School of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya-shi, Tochigi 321-8585 (Japan); Hosokawa, Shogo; Shinozaki, Norifumi [Tatsumori Ltd., 50 Minami-Kawada, Kami-Yukiai, Tamura-cho, Koriyama-shi, Fukushima 963-0724 (Japan); Ando, Mariko; Maekawa, Hideki [Graduate School of Engineering, Tohoku University, 6-6-04 Aramaki Aoba, Sendai-shi, Miyagi 980-8579 (Japan)

    2015-01-15

    The amorphous alumina phosphors without containing expensive or toxic elements were prepared via a solution method. The obtained sample indicates bluish-white emission centered at 390–430 nm by UV excitation. According to the measurement results of Electron Spin Resonance (ESR), Fourier Transform Infrared Spectroscopy (FT-IR) and organic microanalysis, it is found that the carbon impurities exist in the sample and they are essential for luminescence. On the other hand, {sup 27}Al NMR measurements indicate the presence of Al of 5-coordination. Moreover, there is good correspondence among the excitation spectra of the emission samples, the experimental optical properties of amorphous alumina, and the calculated oxygen vacancies levels in amorphous alumina model. Therefore, the new luminescence mechanism can be proposed as follows; the electrons in valence band are excited to oxygen vacancies bands by UV light and return to ground state through the carbon impurities band, being accompanied by the bluish-white emission. - Highlights: • The amorphous alumina prepared via solution method shows bluish-white emission. • According to the ESR results, carbon impurities are necessary for luminescence. • FT-IR, NMR and UV–vis measurements of the samples were conducted. • Our results indicated that oxygen vacancies play an important role. • We proposed the new luminescence mechanism for amorphous alumina phosphor.

  8. Laser Processing of Carbon Nanotube Transparent Conducting Films

    Science.gov (United States)

    Mann, Andrew

    , the relatively weak functional molecules are thermally decomposed. This restores the pristine CNT structure and allows carbon to carbon bonds to form; thereby significantly improving the junction and sheet conductivity. Laser processing is performed without damaging the TCF substrate (usually glass or PET) because laser light is not absorbed by the substrate and conduction from the CNTs is limited. In addition to removing the functional coating, laser light improves the electrical conductivity by purifying the CNT array. The purity is improved through the ablation of defective tubes and amorphous carbon in the CNT film.[1] Using higher laser power, it is possible to locally remove the CNTs. Selective laser removal of the CNTs is a dry process that can be used to pattern the electrode. This is a much simpler and less expensive patterning technique than wet acid etching used for ITO. In summary, laser processing of CNT TCFs is shown to improve the electrical conductivity by defunctionalizing the CNTs. In addition, laser exposure increases purity by removing defects and can be used to pattern the electrode. These advances make CNTs more competitive as an alternative for ITO which has both cost and performance limitations. [1] T. Ueda, S. K. (2008). Effect of laser irradiation on carbon nanotube films for NOx gas sensor. Surface & Coatings Technology, 202, 5325--5328.

  9. Coupled dissolution-precipitation as a mechanism for amorphous-to-crystalline calcium carbonate phase transition

    Science.gov (United States)

    Rodriguez-Navarro, Carlos Manuel; Kudłacz, Krzysztof; Ruiz-Agudo, Encarnacion

    2014-05-01

    Growing evidence shows that several calcium carbonate biominerals form via an amorphous precursor phase. Such a biomineralization strategy could also be applicable for the biomimetic synthesis of novel functional materials. A crucial step in this process is the transformation of amorphous calcium carbonate (ACC) into calcite. However, controversy exists as to what is the actual mechanism of this transformation: Is it a solid-solid (solid state) or a dissolution/precipitation mechanism? Determining the transition mechanism is critical for example in interpreting the formation of oriented crystalline structures in biominerals (e.g., echinoderm spicles). We studied calcium carbonate precipitation and phase transitions according to the overall reaction Ca(OH)2 + CO2 = CaCO3+ H2O. Mineral phase transformations during this reaction were studied using transmission electron microscopy (TEM). Our TEM analysis showed that two different types of ACC are sequentially formed during this reaction. Type I ACC shows no well-defined short-range order, while Type II ACC shows a short-range order corresponding to calcite. Following e-beam irradiation, Type I ACC particles transform into randomly oriented CaO nanocrystals, while irradiation of Type II ACC leads to the formation of pseudomorphs made up of perfectly oriented aggregates of calcite nanocrystals. Moreover, calcite crystals formed in solution or in air (85 % relative humidity) after Type II ACC are also pseudomorphs made up of porous aggregates of preferentially oriented calcite nanocrystals. Our results give experimental evidence showing that the ACC to calcite transformation under relevant biomineralization conditions (low T and P), also applicable in the biomimetic synthesis of calcite, is a pseudomorphic dissolution-precipitation process. This mechanism involves the tightly interface-coupled dissolution of the precursor amorphous phase (with the crystalline phase protostructure) and concomitant deposition of the

  10. Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD

    CERN Document Server

    Pereyra, I; Carreno, M N P; Prado, R J; Fantini, M C A

    2000-01-01

    We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-Si C chemical order. Motivated by this trend, we further explore the effect of increasing RF power and H sub 2 dilution of the gaseous mixtures, aiming to obtain the amorphous counterpart of c-Si C by the RF-PECVD technique. Doping experiments were also performed on ordered material using phosphorus and nitrogen as donor impurities and boron and aluminum as acceptor ones. For nitrogen a doping efficiency close to device quality a-Si:H was obtained, the lower activation energy being 0,12 eV with room temperature dark conductivity of 2.10 sup - sup 3 (OMEGA.cm). Nitrogen doping efficiency was higher than phosphorous for all studied samples. For p-type doping, results indicate that, even though the attained conductivity values are not device levels, aluminum doping conducted to a promising shift in the Fermi level. Also, aluminum resulted a more efficie...

  11. Transformation and Crystallization Energetics of Synthetic and Biogenic Amorphous Calcium Carbonate

    Energy Technology Data Exchange (ETDEWEB)

    Radha, A. V. [Peter A. Rock Thermochemistry Lab. and Nanomaterials in the Environment, Agriculture, and Technology Organized Research Unit (NEAT ORU), Univ. of California, Davis, CA (United States); Forbes, Tori Z. [Peter A. Rock Thermochemistry Lab. and Nanomaterials in the Environment, Agriculture, and Technology Organized Research Unit (NEAT ORU), Univ. of California, Davis, CA (United States); Killian, Christopher E. [Univ. of Wisconsin, Madison, WI (United States); Gilbert, P.U.P.A [Univ. of Wisconsin, Madison, WI (United States); Navrotsky, Alexandra [Peter A. Rock Thermochemistry Lab. and Nanomaterials in the Environment, Agriculture, and Technology Organized Research Unit (NEAT ORU), Univ. of California, Davis, CA (United States)

    2010-01-01

    Amorphous calcium carbonate (ACC) is a metastable phase often observed during low temperature inorganic synthesis and biomineralization. ACC transforms with aging or heating into a less hydrated form, and with time crystallizes to calcite or aragonite. The energetics of transformation and crystallization of synthetic and biogenic (extracted from California purple sea urchin larval spicules, Strongylocentrotus purpuratus) ACC were studied using isothermal acid solution calorimetry and differential scanning calorimetry. Transformation and crystallization of ACC can follow an energetically downhill sequence: more metastable hydrated ACC → less metastable hydrated ACC→anhydrous ACC ~ biogenic anhydrous ACC→vaterite → aragonite → calcite. In a given reaction sequence, not all these phases need to occur. The transformations involve a series of ordering, dehydration, and crystallization processes, each lowering the enthalpy (and free energy) of the system, with crystallization of the dehydrated amorphous material lowering the enthalpy the most. ACC is much more metastable with respect to calcite than the crystalline polymorphs vaterite or aragonite. The anhydrous ACC is less metastable than the hydrated, implying that the structural reorganization during dehydration is exothermic and irreversible. Dehydrated synthetic and anhydrous biogenic ACC are similar in enthalpy. The transformation sequence observed in biomineralization could be mainly energetically driven; the first phase deposited is hydrated ACC, which then converts to anhydrous ACC, and finally crystallizes to calcite. The initial formation of ACC may be a first step in the precipitation of calcite under a wide variety of conditions, including geological CO₂ sequestration.

  12. Flexible protective diamond-like carbon film on rubber

    NARCIS (Netherlands)

    Pei, Y.T.; Bui, X.L.; Hosson, J.Th.M. De

    In this paper we report an experimental approach to deposit flexible diamond-like carbon (DLC) films on rubber via self-segmentation. By making use of the substantial thermal mismatch between the DLC film and rubber substrate a dense network of cracks forms in the DLC film, contributing to its

  13. Tribological and thermal stability study of nanoporous amorphous boron carbide films prepared by pulsed plasma chemical vapor deposition

    Science.gov (United States)

    Liza, Shahira; Ohtake, Naoto; Akasaka, Hiroki; Munoz-Guijosa, Juan M.

    2015-06-01

    In this work, the thermal stability and the oxidation and tribological behavior of nanoporous a-BC:H films are studied and compared with those in conventional diamond-like carbon (DLC) films. a-BC:H films were deposited by pulsed plasma chemical vapor deposition using B(CH3)3 gas as the boron source. A DLC interlayer was used to prevent the a-BC:H film delamination produced by oxidation. Thermal stability of a-BC:H films, with no delamination signs after annealing at 500 °C for 1 h, is better than that of the DLC films, which completely disappeared under the same conditions. Tribological test results indicate that the a-BC:H films, even with lower nanoindentation hardness than the DLC films, show an excellent boundary oil lubricated behavior, with lower friction coefficient and reduce the wear rate of counter materials than those on the DLC film. The good materials properties such as low modulus of elasticity and the formation of micropores from the original nanopores during boundary regimes explain this better performance. Results show that porous a-BC:H films may be an alternative for segmented DLC films in applications where severe tribological conditions and complex shapes exist, so surface patterning is unfeasible.

  14. Tribological and thermal stability study of nanoporous amorphous boron carbide films prepared by pulsed plasma chemical vapor deposition.

    Science.gov (United States)

    Liza, Shahira; Ohtake, Naoto; Akasaka, Hiroki; Munoz-Guijosa, Juan M

    2015-06-01

    In this work, the thermal stability and the oxidation and tribological behavior of nanoporous a -BC:H films are studied and compared with those in conventional diamond-like carbon (DLC) films. a -BC:H films were deposited by pulsed plasma chemical vapor deposition using B(CH 3 ) 3 gas as the boron source. A DLC interlayer was used to prevent the a -BC:H film delamination produced by oxidation. Thermal stability of a -BC:H films, with no delamination signs after annealing at 500 °C for 1 h, is better than that of the DLC films, which completely disappeared under the same conditions. Tribological test results indicate that the a -BC:H films, even with lower nanoindentation hardness than the DLC films, show an excellent boundary oil lubricated behavior, with lower friction coefficient and reduce the wear rate of counter materials than those on the DLC film. The good materials properties such as low modulus of elasticity and the formation of micropores from the original nanopores during boundary regimes explain this better performance. Results show that porous a -BC:H films may be an alternative for segmented DLC films in applications where severe tribological conditions and complex shapes exist, so surface patterning is unfeasible.

  15. Optical properties and scanning probe microscopy study of some Ag-As-S-Se amorphous films

    Czech Academy of Sciences Publication Activity Database

    Knotek, P.; Tasseva, J.; Petkov, K.; Kincl, Miloslav; Tichý, Ladislav

    2009-01-01

    Roč. 517, č. 20 (2009), s. 5943-5947 ISSN 0040-6090 Institutional research plan: CEZ:AV0Z40500505 Keywords : amorphous materials Subject RIV: CA - Inorganic Chemistry Impact factor: 1.727, year: 2009

  16. Growth of graphene films from non-gaseous carbon sources

    Science.gov (United States)

    Tour, James; Sun, Zhengzong; Yan, Zheng; Ruan, Gedeng; Peng, Zhiwei

    2015-08-04

    In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.

  17. Transparent conducting film: Effect of vacuum filtration of carbon ...

    Indian Academy of Sciences (India)

    Administrator

    properties of the CNT mat. Keywords. Transparent conducting film; carbon nanotube; oleum. 1. Introduction. Transparent conducting (TC) films made of carbon nano- tubes (CNT) (Iijima 1991) have been widely studied for computer displays, touch panels, and solar cells applica- tions (Sreekumar et al 2003; Hu et al 2004; ...

  18. Fabrication of carbon film composites for high-strength structures

    Science.gov (United States)

    Preiswerk, P. R.; Lippman, M.

    1972-01-01

    Physical and mechanical properties of fiber composite materials consisting of carbon films are described. Application of carbon film structural composites for constructing microwave filters or optical instruments is proposed. Applications in aerospace and architectural structures for high strength and low density properties are discussed.

  19. Mixed hyperfine interaction in amorphous Fe-Zr sputtered films in external magnetic field - a 57Fe Moessbauer study

    International Nuclear Information System (INIS)

    Fries, S.M.; Crummenauer, J.; Wagner, H.-G.; Gonser, U.; Chien, C.L.

    1986-01-01

    Conventional 57 Fe-Moessbauer spectroscopy provides only information about the magnitude of the splitting QS in the case of electric quadrupole hyperfine interaction, but not on the sign of the main component of the electric field gradient (EFG) or the asymmetry parameter which are sensitive to the local environment of the 57 Fe nuclei. This kind of information is obtained by measurements in external magnetic fields. In the case of amorphous Fe-Zr sputtered films mixed hyperfine interaction leads to a clear change in the behaviour of the Zr-rich and the Fe-rich alloys, indicating the existence of magnetic clusters in the Fe-rich samples. (Auth.)

  20. Electron diffraction on amorphous and crystalline AuAl2 , AuGa2 and AuIn2 thin films

    International Nuclear Information System (INIS)

    Bohorquez, A.

    1991-01-01

    Experimental (in situ) measurements of electron diffraction and resistivity of amorphous and crystalline AuAl 2 , AuGa 2 and AuIn 2 thin films were performed. Thin films were produced by quench condensation. Interference and atomic distribution functions were analyzed assuming the same short range order for the three systems in the amorphous phase. The experimental results do not agree with this assumption, giving evidence that the short range order is not the same for the three amorphous systems. Further discussion of interference and atomic distribution functions shows a more evident tendency in amorphous AuIn 2 where short order of AuIn 2 and In can be inferred. (Author)

  1. Charging of carbon thin films in scanning and phase-plate transmission electron microscopy.

    Science.gov (United States)

    Hettler, Simon; Kano, Emi; Dries, Manuel; Gerthsen, Dagmar; Pfaffmann, Lukas; Bruns, Michael; Beleggia, Marco; Malac, Marek

    2018-01-01

    A systematic study on charging of carbon thin films under intense electron-beam irradiation was performed in a transmission electron microscope to identify the underlying physics for the functionality of hole-free phase plates. Thin amorphous carbon films fabricated by different deposition techniques and single-layer graphene were studied. Clean thin films at moderate temperatures show small negative charging while thin films kept at an elevated temperature are stable and not prone to beam-generated charging. The charging is attributed to electron-stimulated desorption (ESD) of chemisorbed water molecules from the thin-film surfaces and an accompanying change of work function. The ESD interpretation is supported by experimental results obtained by electron-energy loss spectroscopy, hole-free phase plate imaging, secondary electron detection and x-ray photoelectron spectroscopy as well as simulations of the electrostatic potential distribution. The described ESD-based model explains previous experimental findings and is of general interest to any phase-related technique in a transmission electron microscope. Crown Copyright © 2017. Published by Elsevier B.V. All rights reserved.

  2. Field Emission and Radial Distribution Function Studies of Fractal-like Amorphous Carbon Nanotips

    Directory of Open Access Journals (Sweden)

    Lebrón-Colón M

    2009-01-01

    Full Text Available Abstract The short-range order of individual fractal-like amorphous carbon nanotips was investigated by means of energy-filtered electron diffraction in a transmission electron microscope (TEM. The nanostructures were grown in porous silicon substrates in situ within the TEM by the electron beam-induced deposition method. The structure factorS(k and the reduced radial distribution functionG(r were calculated. From these calculations a bond angle of 124° was obtained which suggests a distorted graphitic structure. Field emission was obtained from individual nanostructures using two micromanipulators with sub-nanometer positioning resolution. A theoretical three-stage model that accounts for the geometry of the nanostructures provides a value for the field enhancement factor close to the one obtained experimentally from the Fowler-Nordheim law.

  3. Interdispersed amorphous MnO{sub x}-carbon nanocomposites with superior electrochemical performance as lithium-storage material

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Juchen; Wang, Chunsheng [Department of Chemical and Biomolecular Engineering, University of Maryland, College Park, MD (United States); Liu, Qing; Zachariah, Michael R. [Department of Chemistry and Biochemistry, University of Maryland, College Park, MD (United States)

    2012-02-22

    The realization of manganese oxide anode materials for lithium-ion batteries is hindered by inferior cycle stability, rate capability, and high overpotential induced by the agglomeration of manganese metal grains, low conductivity of manganese oxide, and the high stress/strain in the crystalline manganese oxide structure during the repeated lithiation/delithiation process. To overcome these challenges, unique amorphous MnO{sub x}-C nanocomposite particles with interdispersed carbon are synthesized using aerosol spray pyrolysis. The carbon filled in the pores of amorphous MnO{sub x} blocks the penetration of liquid electrolyte to the inside of MnO{sub x}, thus reducing the formation of a solid electrolyte interphase and lowering the irreversible capacity. The high electronic and lithium-ion conductivity of carbon also enhances the rate capability. Moreover, the interdispersed carbon functions as a barrier structure to prevent manganese grain agglomeration. The amorphous structure of MnO{sub x} brings additional benefits by reducing the stress/strain of the conversion reaction, thus lowering lithiation/delithiation overpotential. As the result, the amorphous MnO{sub x}-C particles demonstrated the best performance as an anode material for lithium-ion batteries to date. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Study of Fluorine Addition Influence in the Dielectric Constant of Diamond-Like Carbon Thin Film Deposited by Reactive Sputtering

    Science.gov (United States)

    Trippe, S. C.; Mansano, R. D.

    The hydrogenated amorphous carbon films (a-C:H) or DLC (Diamond-Like Carbon) films are well known for exhibiting high electrical resistivity, low dielectric constant, high mechanical hardness, low friction coefficient, low superficial roughness and also for being inert. In this paper, we produced fluorinated DLC films (a-C:F), and studied the effect of adding CF4 on the above-mentioned properties of DLC films. These films were produced by a reactive RF magnetron sputtering system using a target of pure carbon in stable graphite allotrope. We performed measurements of electrical characteristic curves of capacitance as a function of applied tension (C-V) and current as a function of the applied tension (I-V). We showed the dielectric constant (k) and the resistivity (ρ) as functions of the CF4 concentration. On films with 65% CF4, we found that k = 2.7, and on films with 70% CF4, ρ = 12.3 × 1011 Ω cm. The value of the electrical breakdown field to films with 70% CF4 is 5.3 × 106 V/cm.

  5. Characterization and antibacterial performance of ZrCN/amorphous carbon coatings deposited on titanium implants

    Energy Technology Data Exchange (ETDEWEB)

    Lai, Chih-Ho [School of Medicine, China Medical University, Taichung, 404 Taiwan (China); Chang, Yin-Yu, E-mail: yinyu@mail2000.com.tw [Department of Mechanical and Computer-Aided Engineering, National Formosa University, Yunlin, Taiwan (China); Huang, Heng-Li [School of Dentistry, China Medical University, Taichung, Taiwan (China); Kao, Ho-Yi [Department of Materials Science and Engineering, Mingdao University, Changhua, Taiwan (China)

    2011-12-30

    Titanium (Ti)-based materials have been used for dental/orthopedic implants due to their excellent biological compatibility, superior mechanical strength and high corrosion resistance. The osseointegration of Ti implants is related to their composition and surface treatment. Better biocompatibility and anti-bacterial performances of Ti implant are beneficial for the osseointegration and for avoiding the infection after implantation surgery. In this study, nanocomposite ZrCN/amorphous carbon (a-C) coatings with different carbon contents were deposited on a bio-grade pure Ti implant material. A cathodic-arc evaporation system with plasma enhanced duct equipment was used for the deposition of ZrCN/a-C coatings. Reactive gas (N{sub 2}) and C{sub 2}H{sub 2} activated by the zirconium plasma in the evaporation process were used to deposit the ZrCN/a-C coatings. To verify the susceptibility of implant surface to bacterial adhesion, Actinobacillus actinomycetemcomitans (A. actinomycetemcomitans), one of the major pathogen frequently found in the dental implant-associated infections, was chosen for in vitro anti-bacterial analyses. In addition, the biocompatibility of human gingival fibroblast (HGF) cells on coatings was also evaluated by a cell proliferation assay. The results suggested that the ZrCN/a-C coatings with carbon content higher than 12.7 at.% can improve antibacterial performance with excellent HGF cell compatibility as well.

  6. Characterization and antibacterial performance of ZrCN/amorphous carbon coatings deposited on titanium implants

    International Nuclear Information System (INIS)

    Lai, Chih-Ho; Chang, Yin-Yu; Huang, Heng-Li; Kao, Ho-Yi

    2011-01-01

    Titanium (Ti)-based materials have been used for dental/orthopedic implants due to their excellent biological compatibility, superior mechanical strength and high corrosion resistance. The osseointegration of Ti implants is related to their composition and surface treatment. Better biocompatibility and anti-bacterial performances of Ti implant are beneficial for the osseointegration and for avoiding the infection after implantation surgery. In this study, nanocomposite ZrCN/amorphous carbon (a-C) coatings with different carbon contents were deposited on a bio-grade pure Ti implant material. A cathodic-arc evaporation system with plasma enhanced duct equipment was used for the deposition of ZrCN/a-C coatings. Reactive gas (N 2 ) and C 2 H 2 activated by the zirconium plasma in the evaporation process were used to deposit the ZrCN/a-C coatings. To verify the susceptibility of implant surface to bacterial adhesion, Actinobacillus actinomycetemcomitans (A. actinomycetemcomitans), one of the major pathogen frequently found in the dental implant-associated infections, was chosen for in vitro anti-bacterial analyses. In addition, the biocompatibility of human gingival fibroblast (HGF) cells on coatings was also evaluated by a cell proliferation assay. The results suggested that the ZrCN/a-C coatings with carbon content higher than 12.7 at.% can improve antibacterial performance with excellent HGF cell compatibility as well.

  7. Selective metallization of amorphous-indium-gallium-zinc-oxide thin-film transistor by using helium plasma treatment

    Science.gov (United States)

    Jang, Hun; Lee, Su Jeong; Porte, Yoann; Myoung, Jae-Min

    2018-03-01

    In this study, the effects of helium (He) plasma treatment on amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) have been investigated. The He plasma treatment induced a dramatic decrease of the resistivity in a-IGZO thin films from 1.25 × 106 to 5.93 mΩ cm. After 5 min He plasma treatment, the a-IGZO films showed an increase in carrier concentration to 6.70 × 1019 cm-3 combined with a high hall mobility of 15.7 cm2 V-1 s-1. The conductivity improvement was linked to the formation of oxygen vacancies during the He plasma treatment, which was observed by x-ray photoelectron spectroscopy analysis. The a-IGZO films did not appear to be damaged on the surface following the plasma treatment and showed a high transmittance of about 88.3% at a wavelength of 550 nm. The He plasma-treated a-IGZO films were used as source/drain (S/D) electrodes in a-IGZO TFTs. The devices demonstrated promising characteristics, on pair with TFTs using Al electrodes, with a threshold voltage (V T) of -1.97 V, sub-threshold slope (SS) of 0.52 V/decade, saturation mobility (μ sat) of 8.75 cm2 V-1 s-1, and on/off current ratio (I on/I off) of 2.66 × 108.

  8. Electrodeposition of amorphous MnO x films on Fe-Ni substrates from aqueous sulfate solution

    Science.gov (United States)

    Pires, Manoel J. M.; Fernandes, Lucas S.

    2017-09-01

    Manganese oxides have a number of promising applications from new magnetic phases to high electrical capacitance systems. A common way of producing these materials is by electrochemical deposition using, for instance, baths with manganous acetate or chloride. As an alternative to acetate or chloride, we have used a solution with MnSO4 for the deposition of MnO x films on a magnetic alloy. Fe-Ni sheets with composition around the Invar point were used as substrates showing the practicability of this kind of growth of the Fe-Ni/MnO x system. The films were characterized by cyclic voltammetry, chronoamperometry, x-ray diffraction, optical and scanning electron microscopies. The obtained films are predominantly amorphous oxides with compositions tending to MnO2, and the most homogeneous samples were deposited from a solution with MnSO4 and H3BO3. Solutions with Na2SO4 and (NH4)2SO4 were also tested, but the resulting films were rather heterogeneous and presented poor adhesion to the Fe-Ni substrates. Direct deposition at constant electric potential as well as deposition by cycling the applied potential were analyzed, and the films prepared by both methods are very similar each other respect to morphology, composition and structure.

  9. Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor by using Focused Ion Beam

    Science.gov (United States)

    Zhu, Wencong

    Compared with other transparent semiconductors, amorphous indium gallium zinc oxide (a-IGZO) has both good uniformity and high electron mobility, which make it as a good candidate for displays or large-scale transparent circuit. The goal of this research is to fabricate alpha-IGZO thin film transistor (TFT) with channel milled by focused ion beam (FIB). TFTs with different channel geometries can be achieved by applying different milling strategies, which facilitate modifying complex circuit. Technology Computer-Aided Design (TCAD) was also introduced to understand the effect of trapped charges on the device performance. The investigation of the trapped charge at IGZO/SiO2 interface was performed on the IGZO TFT on p-Silicon substrate with thermally grown SiO2 as dielectric. The subgap density-of-state model was used for the simulation, which includes conduction band-tail trap states and donor-like state in the subgap. The result shows that the de-trapping and donor-state ionization determine the interface trapped charge density at various gate biases. Simulation of IGZO TFT with FIB defined channel on the same substrate was also applied. The drain and source were connected intentionally during metal deposition and separated by FIB milling. Based on the simulation, the Ga ions in SiO2 introduced by the ion beam was drifted by gate bias and affects the saturation drain current. Both side channel and direct channel transparent IGZO TFTs were fabricated on the glass substrate with coated ITO. Higher ion energy (30 keV) was used to etch through the substrate between drain and source and form side channels at the corner of milled trench. Lower ion energy (16 keV) was applied to stop the milling inside IGZO thin film and direct channel between drain and source was created. Annealing after FIB milling removed the residual Ga ions and the devices show switch feature. Direct channel shows higher saturation drain current (~10-6 A) compared with side channel (~10-7 A) because

  10. Analysis of thermoelectric properties of amorphous InGaZnO thin film by controlling carrier concentration

    Directory of Open Access Journals (Sweden)

    Yuta Fujimoto

    2015-09-01

    Full Text Available We have investigated the thermoelectric properties of amorphous InGaZnO (a-IGZO thin films optimized by adjusting the carrier concentration. The a-IGZO films were produced under various oxygen flow ratios. The Seebeck coefficient and the electrical conductivity were measured from 100 to 400 K. We found that the power factor (PF at 300 K had a maximum value of 82 × 10−6 W/mK2, where the carrier density was 7.7 × 1019 cm−3. Moreover, the obtained data was analyzed by fitting the percolation model. Theoretical analysis revealed that the Fermi level was located approximately above the potential barrier when the PF became maximal. The thermoelectric properties were controlled by the relationship between the position of Fermi level and the height of potential energy barriers.

  11. Atomistic model of ultra-smooth amorphous thin film growth by low-energy ion-assisted physical vapour deposition

    International Nuclear Information System (INIS)

    Alvarez, R; Cotrino, J; Palmero, A; Vazquez, L; Gago, R; Redondo-Cubero, A

    2013-01-01

    The growth of ultra-smooth amorphous thin films induced by low-energy (below 1 keV) ion-assistance processes is studied. The relative contribution of ion-induced smoothening effects is analysed by means of a Monte Carlo model and experimental data. In general, highly rough granular or ultra-smooth (with roughness below one monolayer) films are produced depending on the competition between surface shadowing and ion-induced adatom mobility and sputtering. The ultra-smooth growth regime is experimentally and theoretically consistent with the Edwards–Wilkinson growth mode, which is related to the ion-induced enhancement of surface mobility. Overall, the framework and the fundamentals to analyse this type of growth are developed and discussed. (paper)

  12. Effect of etching stop layer on characteristics of amorphous IGZO thin film transistor fabricated at low temperature

    Directory of Open Access Journals (Sweden)

    Xifeng Li

    2013-03-01

    Full Text Available Transparent bottom-gate amorphous Indium-Gallium-Zinc Oxide (a-IGZO thin-film transistors (TFTs had been successfully fabricated at relative low temperature. The influence of reaction gas ratio of N2O and SiH4 during the growth of etching stop layer (SiOx on the characteristics of a-IGZO TFTs was investigated. The transfer characteristics of the TFTs were changed markedly because active layer of a-IGZO films was modified by plasma in the growth process of SiOx. By optimizing the deposition parameters of etching stop layer process, a-IGZO TFTs were manufactured and exhibited good performance with a field-effect mobility of 8.5 cm2V-1s-1, a threshold voltage of 1.3 V, and good stability under gate bias stress of 20 V for 10000 s.

  13. Amorphous SiO {sub x} nanowires grown on silicon (100) substrates via rapid thermal process of nanodiamond films

    Energy Technology Data Exchange (ETDEWEB)

    Liang Xingbo [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Wang Lei [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Yang Deren [State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)]. E-mail: mseyang@zju.edu.cn

    2006-05-01

    Rapid thermal process (RTP) has been carried out on the deposited nanocrystalline diamond (NCD) films. The RTP treatments performed at 800 and 1200 deg. C have been shown to exert prominent influence on the morphology and structure of the NCD films. The loss of material at grain boundaries has been observed at both 800 and 1200 deg. C RTP treatments. Large-scale amorphous SiO {sub x} nanowires with diameters of 30-50 nm and length up to 10 {mu}m were synthesized after RTP treatment at 1200 deg. C for 60 s. The synthesized nanowires were characterized in detail by scanning electron microscopy, transmission electron microscopy, selected area electron diffraction and energy-dispersed X-ray spectrometry analysis. A possible growth mechanism has been proposed to explain the observed phenomenon.

  14. Impact of contamination on hydrogenated amorphous silicon thin films and solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Woerdenweber, Jan

    2011-09-26

    This thesis deals with atmospheric contamination and cross-contamination of boron (single-chamber process) of the intrinsic absorber layer (i-layer) of p-i-n thin film solar cells based on hydrogenated amorphous silicon. The atmospheric contaminations were introduced by means of intentional leaks. Hereby, the focus is on the influence of contamination species (oxygen and nitrogen), quantity of contamination (leak flow), source of contamination (leaks at chamber wall or in the process gas pipe), and plasma power on the properties of solar cells. Thereby, the minimum requirements for the purity of vacuum and process gas as well as leak conditions of the recipient and gas pipe system have been determined. Additionally, deposition regimes were developed, where the incorporation of impurities is significantly suppressed. For standard processes critical levels of nitrogen and oxygen contamination are determined to be {proportional_to} 4 x 10{sup 18} cm{sup -3} and {proportional_to} 2 x 10{sup 19} cm{sup -3}, respectively, for a leak situated at the chamber wall. Above these concentrations the solar cell efficiency deteriorates. In literature, incorporation of oxygen and nitrogen in doping configuration is assumed to be the reason for the cell deterioration. This assumption is supported by additional material studies of contaminated absorber layers done in this work. The difference in critical concentration is due to the higher doping efficiency of nitrogen compared to that for oxygen. Nevertheless, applying an air leak the critical concentrations of O and N are reached almost simultaneously since the incorporation probability of oxygen is about one order of magnitude higher compared to that for nitrogen. Applying a leak in the process gas pipe the critical oxygen contamination level increases to {proportional_to} 2 x 10{sup 20} cm{sup -3} whereas the critical nitrogen level remains unchanged compared to a chamber wall leak. Applying a deposition regime with a very high

  15. [Calcium-oxygen modified amorphous and nanocrystalline carbon layers as biomaterials].

    Science.gov (United States)

    Dorner-Reisel, A; Schürer, C; Nischan, C; Klemm, V; Irmer, G; Müller, E

    2002-01-01

    Undoped and Ca-O-modified diamond-like carbon coatings were deposited by a direct current discharge. Hardness and Young's modulus of Ca-O-modified DLCs were reduced in comparison with the undoped DLC, but the adherence of the Ca-O-modified films is improved. Ca-O-modified DLCs have a higher fraction of nano-crystalline regions with carbon in sp2 hybridisation. In addition, an increased oxygen content and CaCO3 was identified in Ca-O-modified DLCs. While mouse fibroblasts of the type L929 attach and grow on unmodified diamond-like carbon coatings synthesized by the decomposition of hydrocarbon, the addition of CaO-H2O into the precursor gas improves the coatings biological acceptance by the cells.

  16. Phototransformation-Induced Aggregation of Functionalized Single-Walled Carbon Nanotubes: The Importance of Amorphous Carbon

    Science.gov (United States)

    Single-walled carbon nanotubes (SWCNTs) with proper functionalization are desirable for applications that require dispersion in aqueous and biological environments, and functionalized SWCNTs also serve as building blocks for conjugation with specific molecules in these applicatio...

  17. Crystallization and amorphization studies of a Ge 2 Sb 2.3 Te 5 thin-film sample under pulsed laser irradiation

    Science.gov (United States)

    Khulbe, Pramod K.; Xun, Xiaodong; Mansuripur, M.

    2000-05-01

    We present the results of crystallization and amorphization studies on a thin-film sample of Ge 2 Sb 2.3 Te 5 , encapsulated in a quadrilayer stack as in the media of phase-change optical disk data storage. The study was conducted on a two-laser static tester in which one laser, operating in pulsed mode, writes either amorphous marks on a crystalline film or crystalline marks on an amorphous film. The second laser, operating at low power in the cw mode, simultaneously monitors the progress of mark formation in terms of the variations of reflectivity both during the write pulse and in the subsequent cooling period. In addition to investigating some of the expected features associated with crystallization and amorphization, we noted certain curious phenomena during the mark-formation process. For example, at low-power pulsed illumination, which is insufficient to trigger the phase transition, there is a slight change in the reflectivity of the sample. This is believed to be caused by a reversible change in the complex refractive index of the Ge 2 Sb 2.3 Te 5 film in the course of heating above the ambient temperature. We also observed that the mark-formation process may continue for as long as 1 s beyond the end of the write laser pulse. This effect is especially pronounced during amorphous mark formation under high-power, long-pulse illumination.

  18. Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates

    International Nuclear Information System (INIS)

    Li, Da; Kunz, Thomas; Wolf, Nadine; Liebig, Jan Philipp; Wittmann, Stephan; Ahmad, Taimoor; Hessmann, Maik T.; Auer, Richard; Göken, Mathias; Brabec, Christoph J.

    2015-01-01

    Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivation method for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantum efficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm 2 aperture area on the graphite substrate. The optical properties of the SiN x /a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiN x /a-Si:H(i) stack using focus ion beam preparation. - Highlights: • We report a 10.8% efficiency for thin-film silicon solar cell on graphite. • Hydrogenated intrinsic amorphous silicon was applied for surface passivation. • SiN x /a-Si:H(i) stacks were characterized by spectroscopic ellipsometer techniques. • Cross-section micrograph was obtained by scanning transmission electron microscopy. • Quantum efficiency and J-V measurements show improvements in the cell performance

  19. Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching

    International Nuclear Information System (INIS)

    Boukezzata, A.; Keffous, A.; Cheriet, A.; Belkacem, Y.; Gabouze, N.; Manseri, A.; Nezzal, G.; Kechouane, M.; Bright, A.; Guerbous, L.; Menari, H.

    2010-01-01

    In this work, we present the formation of porous layers on hydrogenated amorphous SiC (a-SiC: H) by Ag-assisted photochemical etching using HF/K 2 S 2 O 8 solution under UV illumination at 254 nm wavelength. The amorphous films a-SiC: H were elaborated by d.c. magnetron sputtering using a hot pressed polycrystalline 6H-SiC target. Because of the high resistivity of the SiC layer, around 1.6 MΩ cm and in order to facilitate the chemical etching, a thin metallic film of high purity silver (Ag) has been deposited under vacuum onto the thin a-SiC: H layer. The etched surface was characterized by scanning electron microscopy, secondary ion mass spectroscopy, infrared spectroscopy and photoluminescence. The results show that the morphology of etched a-SiC: H surface evolves with etching time. For an etching time of 20 min the surface presents a hemispherical crater, indicating that the porous SiC layer is perforated. Photoluminescence characterization of etched a-SiC: H samples for 20 min shows a high and an intense blue PL, whereas it has been shown that the PL decreases for higher etching time. Finally, a dissolution mechanism of the silicon carbide in 1HF/1K 2 S 2 O 8 solution has been proposed.

  20. Hydrogen related crystallization in intrinsic hydrogenated amorphous silicon films prepared by reactive radiofrequency magnetron sputtering at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Senouci, D. [Laboratoire de Genie Physique, Universite Ibn-Khaldoun, 14000 Tiaret (Algeria); LPCMME, Departement de Physique, Universite d' Oran Es-senia, 3100, Oran (Algeria); Baghdad, R., E-mail: r_baghdad@mail.univ-tiaret.dz [Laboratoire de Genie Physique, Universite Ibn-Khaldoun, 14000 Tiaret (Algeria); Belfedal, A.; Chahed, L. [LPCMME, Departement de Physique, Universite d' Oran Es-senia, 3100, Oran (Algeria); Portier, X. [CIMAP, CEA, CNRS UMR 6252-ENSICAEN, UCBN, 6 Bvd Marechal Juin, 14050 Caen Cedex (France); Charvet, S. [LPMC, UFR des Sciences, Universite de Picardie Jules Verne, 33 rue Saint-Leu, 80039 Amiens (France); Kim, K.H. [LPICM, Laboratoire de Physique des Interfaces et Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France); TOTAL S.A., Gas and Power, R and D Division, Courbevoie (France); Roca i Cabarrocas, P. [LPICM, Laboratoire de Physique des Interfaces et Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France); Zellama, K. [LPMC, UFR des Sciences, Universite de Picardie Jules Verne, 33 rue Saint-Leu, 80039 Amiens (France)

    2012-11-01

    We present an investigation on the transition from amorphous to nanocrystalline silicon and associated hydrogen changes during the first steps of hydrogenated nanocrystalline silicon growth for films elaborated by reactive radiofrequency magnetron sputtering at a substrate temperature as low as room temperature and for deposition times varying from 3 to 60 min. Complementary experimental techniques have been used to characterize the films in their as-deposited state. They are completed by thermal hydrogen effusion experiments conducted in the temperature range, from room temperature to 800 Degree-Sign C. The results show that, during the initial stages of growth, the presence of a hydrogen-rich layer is necessary to initiate the crystallization process. - Highlights: Black-Right-Pointing-Pointer Nanocrystalline silicon growth at room temperature. Black-Right-Pointing-Pointer Transition from amorphous to nanocrystalline silicon. Black-Right-Pointing-Pointer Chemical reactions of H atoms with strained Si-Si bonds. Black-Right-Pointing-Pointer H selective etching and chemical transport caused the silicon nucleation.

  1. Highly Efficient Performance and Conversion Pathway of Photocatalytic NO Oxidation on SrO-Clusters@Amorphous Carbon Nitride.

    Science.gov (United States)

    Cui, Wen; Li, Jieyuan; Dong, Fan; Sun, Yanjuan; Jiang, Guangming; Cen, Wanglai; Lee, S C; Wu, Zhongbiao

    2017-09-19

    This work demonstrates the first molecular-level conversion pathway of NO oxidation over a novel SrO-clusters@amorphous carbon nitride (SCO-ACN) photocatalyst, which is synthesized via copyrolysis of urea and SrCO 3 . The inclusion of SrCO 3 is crucial in the formation of the amorphous carbon nitride (ACN) and SrO clusters by attacking the intralayer hydrogen bonds at the edge sites of graphitic carbon nitride (CN). The amorphous nature of ACN can promote the transportation, migration, and transformation of charge carriers on SCO-ACN. And the SrO clusters are identified as the newly formed active centers to facilitate the activation of NO via the formation of Sr-NO δ(+) , which essentially promotes the conversion of NO to the final products. The combined effects of the amorphous structure and SrO clusters impart outstanding photocatalytic NO removal efficiency to the SCO-ACN under visible-light irradiation. To reveal the photocatalytic mechanism, the adsorption and photocatalytic oxidation of NO over CN and SCO-ACN are analyzed by in situ DRIFTS, and the intermediates and conversion pathways are elucidated and compared. This work presents a novel in situ DRIFTS-based strategy to explore the photocatalytic reaction pathway of NO oxidation, which is quite beneficial to understand the mechanism underlying the photocatalytic reaction and advance the development of photocatalytic technology for environmental remediation.

  2. Product analysis during the thermo-oxidation of amorphous deuterated hydrocarbon films with NO2

    Directory of Open Access Journals (Sweden)

    D. Alegre

    2015-12-01

    Full Text Available The excellent thermo-oxidation properties of NO2 have been previously reported, pointing to fast carbon co-deposits removal even at temperatures as low as 200 °C. On the other hand, CO, CO2 and water have been found as the main gas products in oxidation by O2, but in NO2 they have not been confirmed. To make a more accurate assessment, the use of in-situ deposited deuterated hydrocarbon films—to be able to distinguish products from ambient, protonated ones—in a fully-baked chamber have been used in the present work, mainly aimed at detecting heavy (deuterated water among the reaction products. Other products from hydrogen isotopes could not be identified, but their production would be much lower than water. The ratio of the total deuterium to carbon products detected is lower by an order of magnitude than the D/C ratio of the film (0.04–0.07 to 0.4, probably associated to the difficulties of measuring water in a vacuum system, and the relatively large quantity of background water found. Furthermore, post-oxidation of CO to CO2 has been found for NO2 at any studied temperature, while for O2 a faster post-oxidation which only occurs at T > 275 °C was found. Finally, the implications of the water production in the use of thermo-oxidation in actual and future nuclear fusion devices are also addressed.

  3. Synthesis of Ag and Au nanoparticles embedded in carbon film: Optical, crystalline and topography analysis

    Science.gov (United States)

    Gholamali, Hediyeh; Shafiekhani, Azizollah; Darabi, Elham; Elahi, Seyed Mohammad

    2018-03-01

    Atomic force microscopy (AFM) images give valuable information about surface roughness of thin films based on the results of power spectral density (PSD) through the fast Fourier transform (FFT) algorithms. In the present work, AFM data are studied for silver and gold nanoparticles (Ag NPs a-C: H and Au NPs a-C: H) embedded in amorphous hydrogenated carbon films and co-deposited on glass substrate via of RF-Sputtering and RF-Plasma Enhanced Chemical Vapor Deposition methods. Here, the working gas is acetylene and the targets are Ag and Au. While time and power are constant, the only variable parameter in this study is initial pressure. In addition, the crystalline structure of Ag NPs a-C: H and Au NPs a-C: H are studied using X-ray diffraction (XRD). UV-visible spectrophotometry will also investigate optical properties and localized surface plasmon resonance (LSPR) of samples.

  4. Mechanical stability of the diamond-like carbon film on nitinol vascular stents under cyclic loading

    International Nuclear Information System (INIS)

    Kim, Hyun-Jong; Moon, Myoung-Woon; Lee, Kwang-Ryeol; Seok, Hyun-Kwang; Han, Seung-Hee; Ryu, Jae-Woo; Shin, Kyong-Min; Oh, Kyu Hwan

    2008-01-01

    The mechanical stability of diamond-like carbon (DLC) films coated on nitinol vascular stents was investigated under cyclic loading condition by employing a stent crimping system. DLC films were coated on the vascular stent of a three dimensional structure by using a hybrid ion beam system with rotating jig. The cracking or delamination of the DLC coating occurred dominantly near the hinge connecting the V-shaped segments of the stent where the maximum strain was induced by a cyclic loading of contraction and extension. However the failures were significantly suppressed as the amorphous Si (a-Si) buffer layer thickness increased. Interfacial adhesion strength was estimated from the spalled crack size in the DLC coating for various values of the a-Si buffer layer thickness

  5. Surface smoothing effect of an amorphous thin film deposited by atomic layer deposition on a surface with nano-sized roughness

    Directory of Open Access Journals (Sweden)

    W. S. Lau

    2014-02-01

    Full Text Available Previously, Lau (one of the authors pointed out that the deposition of an amorphous thin film by atomic layer deposition (ALD on a substrate with nano-sized roughness probably has a surface smoothing effect. In this letter, polycrystalline zinc oxide deposited by ALD onto a smooth substrate was used as a substrate with nano-sized roughness. Atomic force microscopy (AFM and cross-sectional transmission electron microscopy (XTEM were used to demonstrate that an amorphous aluminum oxide thin film deposited by ALD can reduce the surface roughness of a polycrystalline zinc oxide coated substrate.

  6. Studies of hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Bishop, S G; Carlos, W E

    1984-07-01

    This report discusses the results of probing the defect structure and bonding of hydrogenated amorphous silicon films using both nuclear magnetic resonance (NMR) and electron spin resonance (ESR). The doping efficiency of boron in a-Si:H was found to be less than 1%, with 90% of the boron in a threefold coordinated state. On the other hand, phosphorus NMR chemical shift measurements yielded a ration of threefold to fourfold P sites of roughly 4 to 1. Various resonance lines were observed in heavily boron- and phosphorus-doped films and a-SiC:H alloys. These lines were attributed to band tail states on twofold coordinated silicon. In a-SiC:H films, a strong resonance was attributed to dangling bonds on carbon atoms. ESR measurements on low-pressure chemical-vapor-deposited (LPCVD) a-Si:H were performed on samples. The defect density in the bulk of the films was 10/sup 17//cc with a factor of 3 increase at the surface of the sample. The ESR spectrum of LPCVD-prepared films was not affected by prolonged exposure to strong light. Microcrystalline silicon samples were also examined. The phosphorus-doped films showed a strong signal from the crystalline material and no resonance from the amorphous matrix. This shows that phosphorus is incorporated in the crystals and is active as a dopant. No signal was recorded from the boron-doped films.

  7. Electromagnetic wave absorption properties of composites with micro-sized magnetic particles dispersed in amorphous carbon

    Science.gov (United States)

    Li, Bin Peng; Wang, Cheng Guo; Wang, Wen; Yu, Mei Jie; Gao, Rui; Chen, Yang; Xiang Wang, Yan

    2014-09-01

    Composites with micro-sized magnetic particles dispersed in amorphous carbon were fabricated conveniently and economically by carbonizing polyacrylonitrile (PAN) fibers mixed with micro-sized iron particles under different temperatures. The composites were characterized by X-ray diffraction (XRD) and scanning electric microscope (SEM). The electromagnetic (EM) properties were measured by a vector network analyzer in the frequency range of 2-18 GHz based on which analog computations of EM wave absorption properties were carried out. The influences of temperature on phase composition and EM wave absorption properties were also investigated, indicating that the composites had good electromagnetic absorption properties with both electrical loss and magnetic loss. Effective reflection loss (RL<-10 dB) was observed in a large frequency range of 7.5-18 GHz with the absorber thickness of 2.0-3.0 mm for the paraffin samples with composite powders heated up to 750 °C and the minimum absorption peak around -40 dB appeared at approximately 10 GHz with matching thickness of 2.0 mm for the paraffin sample with composite powders heated up to 800 °C.

  8. Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization

    Science.gov (United States)

    Erich, M.; Kokkoris, M.; Fazinić, S.; Petrović, S.

    2018-02-01

    This work reports on the induced diamond crystal amorphization by 4 MeV carbon ions implanted in the 〈1 0 0〉 oriented crystal and its determination by application of RBS/C and EBS/C techniques. The spectra from the implanted samples were recorded for 1.2, 1.5, 1.75 and 1.9 MeV protons. For the two latter ones the strong resonance of the nuclear elastic scattering 12C(p,p0)12C at 1.737 MeV was explored. The backscattering channeling spectra were successfully fitted and the ion beam induced crystal amorphization depth profile was determined using a phenomenological approach, which is based on the properly defined Gompertz type dechanneling functions for protons in the 〈1 0 0〉 diamond crystal channels and the introduction of the concept of ion beam amorphization, which is implemented through our newly developed computer code CSIM.

  9. Intense Red Catho- and Photoluminescence from 200 nm Thick Samarium Doped Amorphous AlN Thin Films

    Directory of Open Access Journals (Sweden)

    Ali Tariq

    2009-01-01

    Full Text Available Abstract Samarium (Sm doped aluminum nitride (AlN thin films are deposited on silicon (100 substrates at 77 K by rf magnetron sputtering method. Thick films of 200 nm are grown at 100–200 watts RF power and 5–8 m Torr nitrogen, using a metal target of Al with Sm. X-ray diffraction results show that films are amorphous. Cathodoluminescence (CL studies are performed and four peaks are observed in Sm at 564, 600, 648, and 707 nm as a result of4G5/2 → 6H5/2,4G5/2 → 6H7/2,4G5/2 → 6H9/2, and4G5/2 → 6H11/2transitions. Photoluminescence (PL provides dominant peaks at 600 and 707 nm while CL gives the intense peaks at 600 nm and 648 nm, respectively. Films are thermally activated at 1,200 K for half an hour in a nitrogen atmosphere. Thermal activation enhances the intensity of luminescence.

  10. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

    KAUST Repository

    Nayak, Pradipta K.

    2013-05-08

    It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility - 5.6 cm2 V-1 s-1 with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 108 - was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing. © 2013 American Chemical Society.

  11. Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films

    Science.gov (United States)

    Rupp, Jonathan A. J.; Querré, Madec; Kindsmüller, Andreas; Besland, Marie-Paule; Janod, Etienne; Dittmann, Regina; Waser, Rainer; Wouters, Dirk J.

    2018-01-01

    This study investigates resistive switching in amorphous undoped and Cr-doped vanadium oxide thin films synthesized by sputtering deposition at low oxygen partial pressure. Two different volatile threshold switching characteristics can occur as well as a non-volatile bipolar switching mechanism, depending on device stack symmetry and Cr-doping. The two threshold switching types are associated with different crystalline phases in the conduction filament created during an initial forming step. The first kind of threshold switching, observed for undoped vanadium oxide films, was, by its temperature dependence, proven to be associated with a thermally triggered insulator-to-metal transition in a crystalline VO2 phase, whereas the threshold switch observed in chromium doped films is stable up to 90 °C and shows characteristics of an electronically induced Mott transition. This different behaviour for undoped versus doped films has been attributed to an increased stability of V3+ due to the Cr3+ doping (as evidenced by X-ray photoelectron spectroscopy analysis), probably favouring the creation of a crystalline Cr-doped V2O3 phase (rather than a Cr-doped VO2 phase) during the energetic forming step. The symmetric Pt/a-(VCr)Ox/Pt device showing high temperature stable threshold switching may find interesting applications as a possible new selector device for resistive switching memory (ReRAM) crossbar arrays.

  12. Intense Red Catho- and Photoluminescence from 200 nm Thick Samarium Doped Amorphous AlN Thin Films.

    Science.gov (United States)

    Maqbool, Muhammad; Ali, Tariq

    2009-04-25

    Samarium (Sm) doped aluminum nitride (AlN) thin films are deposited on silicon (100) substrates at 77 K by rf magnetron sputtering method. Thick films of 200 nm are grown at 100-200 watts RF power and 5-8 m Torr nitrogen, using a metal target of Al with Sm. X-ray diffraction results show that films are amorphous. Cathodoluminescence (CL) studies are performed and four peaks are observed in Sm at 564, 600, 648, and 707 nm as a result of (4)G(5/2) --> (6)H(5/2), (4)G(5/2) --> (6)H(7/2), (4)G(5/2) --> (6)H(9/2), and (4)G(5/2) --> (6)H(11/2) transitions. Photoluminescence (PL) provides dominant peaks at 600 and 707 nm while CL gives the intense peaks at 600 nm and 648 nm, respectively. Films are thermally activated at 1,200 K for half an hour in a nitrogen atmosphere. Thermal activation enhances the intensity of luminescence.

  13. Intense Red Catho- and Photoluminescence from 200 nm Thick Samarium Doped Amorphous AlN Thin Films

    Science.gov (United States)

    Maqbool, Muhammad; Ali, Tariq

    2009-07-01

    Samarium (Sm) doped aluminum nitride (AlN) thin films are deposited on silicon (100) substrates at 77 K by rf magnetron sputtering method. Thick films of 200 nm are grown at 100-200 watts RF power and 5-8 m Torr nitrogen, using a metal target of Al with Sm. X-ray diffraction results show that films are amorphous. Cathodoluminescence (CL) studies are performed and four peaks are observed in Sm at 564, 600, 648, and 707 nm as a result of 4G5/2 → 6H5/2, 4G5/2 → 6H7/2, 4G5/2 → 6H9/2, and 4G5/2 → 6H11/2 transitions. Photoluminescence (PL) provides dominant peaks at 600 and 707 nm while CL gives the intense peaks at 600 nm and 648 nm, respectively. Films are thermally activated at 1,200 K for half an hour in a nitrogen atmosphere. Thermal activation enhances the intensity of luminescence.

  14. Piezoresistive pressure sensor using low-temperature aluminium induced crystallization of sputter-deposited amorphous silicon film

    Science.gov (United States)

    Tiwari, Ruchi; Chandra, Sudhir

    2013-09-01

    In the present work, we have investigated the piezoresistive properties of silicon films prepared by the radio frequency magnetron sputtering technique, followed by the aluminium induced crystallization (AIC) process. Orientation and grain size of the polysilicon films were studied by x-ray diffraction analysis and found to be in the range 30-50 nm. Annealing of the Al-Si stack on an oxidized silicon substrate was performed in air ambient at 300-550 °C, resulting in layer exchange and transformation from amorphous to polysilicon phase. Van der Pauw and Hall measurement techniques were used to investigate the sheet resistance and carrier mobility of the resulting polycrystalline silicon film. The effect of Al thickness on the sheet resistance and mobility was also studied in the present work. A piezoresistive pressure sensor was fabricated on an oxidized silicon substrate in a Wheatstone bridge configuration, comprising of four piezoresistors made of polysilicon film obtained by the AIC process. The diaphragm was formed by the bulk-micromachining of silicon substrate. The response of the pressure sensor with applied negative pressure in 10-95 kPa range was studied. The gauge factor was estimated to be 5 and 18 for differently located piezoresistors on the diaphragm. The sensitivity of the pressure sensor was measured to be ˜ 30 mV MPa-1, when the Wheatstone bridge was biased at 1 V input voltage.

  15. Near-surface hydrogen depletion of diamond-like carbon films produced by direct ion deposition

    Science.gov (United States)

    Markwitz, Andreas; Gupta, Prasanth; Mohr, Berit; Hübner, René; Leveneur, Jerome; Zondervan, Albert; Becker, Hans-Werner

    2016-03-01

    Amorphous atomically flat diamond-like carbon (DLC) coatings were produced by direct ion deposition using a system based on a Penning ion source, butane precursor gas and post acceleration. Hydrogen depth profiles of the DLC coatings were measured with the 15N R-NRA method using the resonant nuclear reaction 1H(15N, αγ)12C (Eres = 6.385 MeV). The films produced at 3.0-10.5 kV acceleration voltage show two main effects. First, compared to average elemental composition of the film, the near-surface region is hydrogen depleted. The increase of the hydrogen concentration by 3% from the near-surface region towards the bulk is attributed to a growth model which favours the formation of sp2 hybridised carbon rich films in the film formation zone. Secondly, the depth at which the maximum hydrogen concentration is measured increases with acceleration voltage and is proportional to the penetration depth of protons produced by the ion source from the precursor gas. The observed effects are explained by a deposition process that takes into account the contributions of ion species, hydrogen effusion and preferential displacement of atoms during direct ion deposition.

  16. Near-surface hydrogen depletion of diamond-like carbon films produced by direct ion deposition

    Energy Technology Data Exchange (ETDEWEB)

    Markwitz, Andreas, E-mail: A.Markwitz@gns.cri.nz [GNS Science, Lower Hutt (New Zealand); The MacDiarmid Institute for Advanced Materials and Nanotechnology (New Zealand); Gupta, Prasanth [GNS Science, Lower Hutt (New Zealand); The MacDiarmid Institute for Advanced Materials and Nanotechnology (New Zealand); Mohr, Berit [GNS Science, Lower Hutt (New Zealand); Hübner, René [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (Germany); Leveneur, Jerome; Zondervan, Albert [GNS Science, Lower Hutt (New Zealand); Becker, Hans-Werner [RUBION, Ruhr-University Bochum (Germany)

    2016-03-15

    Amorphous atomically flat diamond-like carbon (DLC) coatings were produced by direct ion deposition using a system based on a Penning ion source, butane precursor gas and post acceleration. Hydrogen depth profiles of the DLC coatings were measured with the 15N R-NRA method using the resonant nuclear reaction {sup 1}H({sup 15}N, αγ){sup 12}C (E{sub res} = 6.385 MeV). The films produced at 3.0–10.5 kV acceleration voltage show two main effects. First, compared to average elemental composition of the film, the near-surface region is hydrogen depleted. The increase of the hydrogen concentration by 3% from the near-surface region towards the bulk is attributed to a growth model which favours the formation of sp{sup 2} hybridised carbon rich films in the film formation zone. Secondly, the depth at which the maximum hydrogen concentration is measured increases with acceleration voltage and is proportional to the penetration depth of protons produced by the ion source from the precursor gas. The observed effects are explained by a deposition process that takes into account the contributions of ion species, hydrogen effusion and preferential displacement of atoms during direct ion deposition.

  17. Study of PECVD films containing flourine and carbon and diamond like carbon films for ultra low dielectric constant interlayer dielectric applications

    Science.gov (United States)

    Sundaram, Nandini Ganapathy

    precursors. Pre and post-anneal structural properties of the deposited thin film were studied using laser excitation of 633 nm in a Jobin Yvon Labram high-resolution micro-Raman spectrometer. The film was further characterized using AFM, FTIR, XRD, goniometry and electrical testing. Average film roughness as measured by AFM was less than 1 nm, the k-value was 2.5, and the contact angle with water was 42°. Lastly, layered dielectric films comprising of Diamond like Carbon (DLC) and Amorphous Fluorocarbon (a:C-F) were generated using three different stack configurations and subsequently evaluated. Seven unique process conditions generated promising stacks with k-values between 1.69 and 1.95. Of these, only one film exhibited very low shrinkage rates acceptable for semiconductor device processing. Annealed a:C-F films with DLC top coat are similar in bonding structure to as deposited FC films proving that DLC deposition significantly modified the bonding structure of the underlying annealed a:C-F film. Stacks comprised of a:C-F films with higher oxygen content, deposited using high FRRs exhibited both macro and microbuckling to a larger degree and extent. Film integrity was preserved by annealing the Fluorocarbon component or by providing a DLC base coat.

  18. Spectroscopic ellipsometry characterization of amorphous and crystalline TiO2 thin films grown by atomic layer deposition at different temperatures

    Science.gov (United States)

    Saha, D.; Ajimsha, R. S.; Rajiv, K.; Mukherjee, C.; Gupta, M.; Misra, P.; Kukreja, L. M.

    2014-10-01

    TiO2 thin films of widely different structural and morphological characteristics were grown on Si (1 0 0) substrates using Atomic Layer Deposition (ALD) by varying the substrate temperature (Ts) in a wide range (50 °C ≤ Ts ≤ 400 °C). Spectroscopic ellipsometry (SE) measurements were carried out to investigate the effect of growth temperature on the optical properties of the films. Measured SE data were analyzed by considering double layer optical model for the sample together with the single oscillator Tauc-Lorentz dispersion relation. Surface roughness was taken into consideration due to the columnar growths of grains in crystalline films. The refractive index was found to be increased from amorphous (Ts ≤ 150 °C) to the nanocrystalline films (2500 < Ts ≤ 400 °C). The pronounced surface roughening for the large-grained anatase film obtained at the amorphous to crystalline phase transformation temperature of 200 °C, impeded SE measurement. The dispersions of refractive indices below the interband absorption edge were found to be strongly correlated with the single oscillator Wemple-DiDomenico (WD) model. The increase in dispersion energy parameter in WD model from disordered amorphous to the more ordered nanocrystalline films was found to be associated with the increase in the film density and coordination number.

  19. Physical properties of chemical vapour deposited nanostructured carbon thin films

    International Nuclear Information System (INIS)

    Mahadik, D.B.; Shinde, S.S.; Bhosale, C.H.; Rajpure, K.Y.

    2011-01-01

    Research highlights: In the present paper, nanostructured carbon films are grown using a natural precursor 'turpentine oil (C 10 H 16 )' as a carbon source in the simple thermal chemical vapour deposition method. The influence of substrate surface topography (viz. stainless steel, fluorine doped tin oxide coated quartz) and temperature on the evolution of carbon allotropes surfaces topography/microstructural and structural properties are investigated and discussed. - Abstract: A simple thermal chemical vapour deposition technique is employed for the deposition of carbon films by pyrolysing the natural precursor 'turpentine oil' on to the stainless steel (SS) and FTO coated quartz substrates at higher temperatures (700-1100 deg. C). In this work, we have studied the influence of substrate and deposition temperature on the evolution of structural and morphological properties of nanostructured carbon films. The films were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), contact angle measurements, Fourier transform infrared (FTIR) and Raman spectroscopy techniques. XRD study reveals that the films are polycrystalline exhibiting hexagonal and face-centered cubic structures on SS and FTO coated glass substrates respectively. SEM images show the porous and agglomerated surface of the films. Deposited carbon films show the hydrophobic nature. FTIR study displays C-H and O-H stretching vibration modes in the films. Raman analysis shows that, high ID/IG for FTO substrate confirms the dominance of sp 3 bonds with diamond phase and less for SS shows graphitization effect with dominant sp 2 bonds. It reveals the difference in local microstructure of carbon deposits leading to variation in contact angle and hardness, which is ascribed to difference in the packing density of carbon films, as observed also by Raman.

  20. Depth dependence of Neel wall pinning on amorphous Co {sub x} Si{sub 1-} {sub x} films with diluted arrays of elliptical antidots

    Energy Technology Data Exchange (ETDEWEB)

    Perez-Junquera, A. [Dpto. Fisica, Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain); Martin, J.I. [Dpto. Fisica, Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain)]. E-mail: jmartin@condmat.uniovi.es; Anguita, J.V. [Instituto de Microelectronica de Madrid, CNM-CSIC, Isaac Newton 8, PTM, Tres Cantos, 28760 Madrid (Spain); Rodriguez-Rodriguez, G. [Dpto. Fisica, Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain) and Instituto Nacional del Carbon (INCAR), CSIC, c/Francisco Pintado Fe 26, 33011 Oviedo (Spain); Velez, M. [Dpto. Fisica, Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain); Rubio, H. [Dpto. Fisica, Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain); Alvarez-Prado, L.M. [Dpto. Fisica, Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain); Alameda, J.M. [Dpto. Fisica, Universidad de Oviedo, c/ Calvo Sotelo s/n, 33007 Oviedo (Spain)

    2007-09-15

    Diluted arrays of elliptical antidots have been fabricated by optical lithography, electron beam lithography and plasma etching on amorphous Co{sub 74}Si{sub 26} magnetic films with a well-defined uniaxial anisotropy. The magnetic behavior of two identical antidot arrays but with different hole depth in comparison with film thickness has been studied by transverse magneto-optical Kerr effect. Significant differences appear in the coercivity depending on whether the magnetic film is completely perforated or not, indicating a much more effective domain wall pinning process when the depth of the holes is smaller than the magnetic film thickness.