Sample records for americium arsenides

  1. Chemistry of americium

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    Schulz, W.W.


    Essential features of the descriptive chemistry of americium are reviewed. Chapter titles are: discovery, atomic and nuclear properties, collateral reading, production and uses, chemistry in aqueous solution, metal, alloys, and compounds, and, recovery, separation, purification. Author and subject indexes are included. (JCB)

  2. Gallium Arsenide Photocathode Development (United States)


    r ~\\ 1 1 AD-A018 619 ■ i I 1 GALLIUM ARSENIDE PHOTOCATHODE DEVELOPMENT I Terry Roach, et al 1 1 ■f EPSCO ...aiwiiwnHWlffl’Wip m, «swwerf^MW^S’ GALLIUM ARSENIDE PHOTOCATHODE DEVELOPMENT T. J. Roach Bianca Contractor: EPSCO Laboratories Contract Number: F08606...PHOTOCATHODE DEVELOPMENT 7. AUTHORfaJ T. Roach J. Bianca t. PERFORMING ORGANIZATION NAME AND AOORESS EPSCO Laboratories 227 High Ridge Road Stauford CT

  3. The Biokinetic Model of Americium

    Institute of Scientific and Technical Information of China (English)


    To improve in vivo measurements for detecting internal exposure from transuranium radio nuclides, such as neptunium, plutonium, americium, the bioknetic model was studied. According to ICRP report (1993, 1995, 1997) and other research, the

  4. Aqueous Chloride Operations Overview: Plutonium and Americium Purification/Recovery

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    Kimball, David Bryan [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Skidmore, Bradley Evan [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)


    Acqueous Chloride mission is to recover plutonium and americium from pyrochemical residues (undesirable form for utilization and storage) and generate plutonium oxide and americium oxide. Plutonium oxide is recycled into Pu metal production flowsheet. It is suitable for storage. Americium oxide is a valuable product, sold through the DOE-OS isotope sales program.

  5. 5f-Electron Delocalization in Americium

    DEFF Research Database (Denmark)

    Skriver, Hans Lomholt; Andersen, O. K.; Johansson, B.


    The pressure-volume relation for americium has been obtained without adjustable parameters from self-consistent, spin-polarized band calculations. Around 100 kbar we find a first-order transition to a state with low volume and no spin. This is consistent with preliminary high-pressure measurements....

  6. The relative physiological and toxicological properties of americium and plutonium

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    Carter, R.E.; Busch, E.; Johnson, O. [and others


    The relative physiological and toxicological properties of americium and plutonium have been studied following their intravenous administration to rats. The urinary and fecal excretion of americium was similar to that of plutonium administered as Pu(N0{sub 3}){sub 4}. The deposition of americium the tissues and organs of the rat was also similar to that observed for plutonium. The liver and the skeleton were the major sites of deposition. Zirconium citrate administered 15 minutes after injection of americium increased the urinary excretion of americium and decreased the amount found in the liver and the skeleton at 4 and 16 days. LD{sub 30}{sup 50} studies showed americium was slightly less toxic when given in the acute toxic range than was plutonium. The difference was, however, too slight to be important in establishing a larger tolerance does for americium. Survival studies, hematological observations, bone marrow observations, comparison of tumor incidence and the incidence of skeletal abnormalities indicated that americium and plutonium have essentially the same chronic toxicity when given on an equal {mu}c. basis. These studies support the conclusion that the tolerance values for americium should be essentially the same as those for Plutonium.

  7. Surface complexation modeling of americium sorption onto volcanic tuff. (United States)

    Ding, M; Kelkar, S; Meijer, A


    Results of a surface complexation model (SCM) for americium sorption on volcanic rocks (devitrified and zeolitic tuff) are presented. The model was developed using PHREEQC and based on laboratory data for americium sorption on quartz. Available data for sorption of americium on quartz as a function of pH in dilute groundwater can be modeled with two surface reactions involving an americium sulfate and an americium carbonate complex. It was assumed in applying the model to volcanic rocks from Yucca Mountain, that the surface properties of volcanic rocks can be represented by a quartz surface. Using groundwaters compositionally representative of Yucca Mountain, americium sorption distribution coefficient (Kd, L/Kg) values were calculated as function of pH. These Kd values are close to the experimentally determined Kd values for americium sorption on volcanic rocks, decreasing with increasing pH in the pH range from 7 to 9. The surface complexation constants, derived in this study, allow prediction of sorption of americium in a natural complex system, taking into account the inherent uncertainty associated with geochemical conditions that occur along transport pathways.

  8. Spin Injection in Indium Arsenide

    Directory of Open Access Journals (Sweden)

    Mark eJohnson


    Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.

  9. Self-irradiation and oxidation effects on americium sesquioxide and Raman spectroscopy studies of americium oxides

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    Horlait, Denis [CEA, DEN, DTEC/SDTC/LEMA, F-30207 Bagnols-sur-Cèze Cedex (France); Caraballo, Richard [CEA, DEN, DTCD/SECM/LMPA, F-30207 Bagnols-sur-Cèze Cedex (France); Lebreton, Florent [CEA, DEN, DTEC/SDTC/LEMA, F-30207 Bagnols-sur-Cèze Cedex (France); Jégou, Christophe [CEA, DEN, DTCD/SECM/LMPA, F-30207 Bagnols-sur-Cèze Cedex (France); Roussel, Pascal [Unité de Catalyse et Chimie du Solide, UMR 8012 CNRS, Ecole Nationale Supérieure de Chimie de Lille BP 90108, 59652 Villeneuve d’Ascq Cedex (France); Delahaye, Thibaud, E-mail: [CEA, DEN, DTEC/SDTC/LEMA, F-30207 Bagnols-sur-Cèze Cedex (France)


    Americium oxides samples were characterized by X-ray diffraction (XRD) and Raman spectroscopy, with an emphasis on their structural behavior under oxidation and self-irradiation. Raman spectra of americium dioxide (AmO{sub 2}) and sesquioxide (Am{sub 2}O{sub 3}) were obtained for the first time. With the help of literature data on isostructural oxides, Raman signatures of Ia-3 C-type Am{sub 2}O{sub 3} and P-3m1 A-type Am{sub 2}O{sub 3} are identified. For AmO{sub 2,} a clear band is noted at 390 cm{sup −1}. Its nature is compared to that of the other actinide dioxides. Am{sub 2}O{sub 3} evolution under ambient conditions and against {sup 241}Am α self-irradiation was monitored by powder XRD. The sample, initially composed of A-type Am{sub 2}O{sub 3} as major phase as well as C2/m B-type and C-type structures as minor phases, progressively oxidizes to Fm-3m AmO{sub 2−δ} over a few months. On the basis of diffractogram refinements, evolutions of unit cell volumes caused by self-irradiation are also determined and discussed. - Graphical abstract: The evolution of americium oxide under ambient conditions was monitored using XRD (X-ray diffraction) and Raman spectroscopy. After a thermal treatment under reducing conditions, a polyphasic sample mainly composed of A- and C-type americium sesquioxides is evidenced by XRD and Raman spectroscopy. The sample then evolves through two processes: oxidation and self-irradiation. The first one provokes the progressive appearance of F-type americium dioxide while the initial phases disappear, whereas the main effect of the second is a structural swelling with time. - Highlights: • The first Raman spectroscopy measurements on americium oxides were performed. • Observed Am{sub 2}O{sub 3} Raman bands were identified thanks to data on analogue compounds. • AmO{sub 2} assumed T{sub 2g} band presents a shift compared to the actinide dioxide series. • Am{sub 2}O{sub 3} evolution under self-irradiation and oxidation was also

  10. Plutonium and Americium Geochemistry at Hanford: A Site Wide Review

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    Cantrell, Kirk J.; Felmy, Andrew R.


    This report was produced to provide a systematic review of the state-of-knowledge of plutonium and americium geochemistry at the Hanford Site. The report integrates existing knowledge of the subsurface migration behavior of plutonium and americium at the Hanford Site with available information in the scientific literature regarding the geochemistry of plutonium and americium in systems that are environmentally relevant to the Hanford Site. As a part of the report, key research needs are identified and prioritized, with the ultimate goal of developing a science-based capability to quantitatively assess risk at sites contaminated with plutonium and americium at the Hanford Site and the impact of remediation technologies and closure strategies.

  11. Americium/Curium Disposition Life Cycle Planning Study

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    Jackson, W.N. [Westinghouse Savannah River Company, AIKEN, SC (United States); Krupa, J.; Stutts, P.; Nester, S.; Raimesch, R.


    At the request of the Department of Energy Savannah River Office (DOE- SR), Westinghouse Savannah River Company (WSRC) evaluated concepts to complete disposition of Americium and Curium (Am/Cm) bearing materials currently located at the Savannah River Site (SRS).

  12. Higher Americium Oxidation State Research Roadmap

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    Mincher, Bruce J. [Idaho National Lab. (INL), Idaho Falls, ID (United States); Law, Jack D. [Idaho National Lab. (INL), Idaho Falls, ID (United States); Goff, George S. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Moyer, Bruce A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Burns, Jon D. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Lumetta, Gregg J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Sinkov, Sergey I. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Shehee, Thomas C. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Hobbs, David T. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)


    The partitioning of hexavalent Am from dissolved nuclear fuel requires the ability to efficiently oxidize Am(III) to Am(VI) and to maintain that oxidation state for a length of time sufficient to perform the separation. Several oxidants have been, or are being developed. Chemical oxidants include Ag-catalyzed ozone, Ag-catalyzed peroxydisulfate, Cu(III) periodate, and sodium bismuthate. Hexavalent americium has also now successfully been prepared by electrolysis, using functionalized electrodes. So-called auto-reduction rates of Am(VI) are sufficiently slow to allow for separations. However, for separations based on solvent extraction or ion exchange using organic resins, the high valence state must be maintained under the reducing conditions of the organic phase contact, and a holding oxidant is probably necessary. Until now, only Cu(III) periodate and sodium bismuthate oxidation have been successfully combined with solvent extraction separations. Bismuthate oxidation provided the higher DAm, since it acts as its own holding oxidant, and a successful hot test using centrifugal contactors was performed. For the other oxidants, Ag-catalyzed peroxydisulfate will not oxidize americium in nitric acid concentrations above 0.3 M, and it is not being further investigated. Peroxydisulfate in the absence of Ag catalysis is being used to prepare Am(V) in ion exchange work, discussed below. Preliminary work with Ag-catalyzed ozone has been unsuccessful for extractions of Am(VI) from 6.5 M HNO3, and only one attempt at extraction, also from 6.5 M HNO3, using the electrolytic oxidation has been attempted. However, this high acid concentration was based on the highest Am extraction efficiency using the bismuthate oxidant; which is only sparingly soluble, and thus the oxidation yield is based on bismuthate solubility. Lower acid concentrations may be sufficient with alternative oxidants and work with Ag-ozone, Cu(III) and electrolysis is on-going. Two non

  13. Aqueous Chloride Operations Overview: Plutonium and Americium Purification/Recovery

    Energy Technology Data Exchange (ETDEWEB)

    Gardner, Kyle Shelton [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Kimball, David Bryan [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Skidmore, Bradley Evan [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)


    These are a set of slides intended for an information session as part of recruiting activities at Brigham Young University. It gives an overview of aqueous chloride operations, specifically on plutonium and americium purification/recovery. This presentation details the steps taken perform these processes, from plutonium size reduction, dissolution, solvent extraction, oxalate precipitation, to calcination. For americium recovery, it details the CLEAR (chloride extraction and actinide recovery) Line, oxalate precipitation and calcination.

  14. Pyrochemical investigations into recovering plutonium from americium extraction salt residues

    Energy Technology Data Exchange (ETDEWEB)

    Fife, K.W.; West, M.H.


    Progress into developing a pyrochemical technique for separating and recovering plutonium from spent americium extraction waste salts has concentrated on selective chemical reduction with lanthanum metal and calcium metal and on the solvent extraction of americium with calcium metal. Both techniques are effective for recovering plutonium from the waste salt, although neither appears suitable as a separation technique for recycling a plutonium stream back to mainline purification processes. 17 refs., 13 figs., 2 tabs.

  15. Electrodeposition of americium and physicochemical behaviour of the solution

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    Becerril-Vilchis, A. (Inst. Nacional de Investigaciones Nucleares, CMRI-LPR, Mexico City (Mexico)); Meas, Y. (CIDETEQ, Queretaro (Mexico)); Rojas-Hernandez, A. (Univ. Autonoma Metropolitana Iztapalapa, Area de Electroquimica, Mexico City (Mexico))


    A new method based on concepts of generalized species and equilibria, was applied to represent the thermodynamic distribution of americium species (including condensed phases) in an electrochemical system. Diagrams of the predominance-zone, Existence-predominance and Pourbaix-type for the americium/support electrolyte/water system were constructed. On the basis of these diagrams, the initial distribution of the species in the electrolyte and the deposition conditions were predicted when a current density was applied to a rotating disc electrode in steady-state. These results were related with the Hansen model for actinide electrodeposition. (orig.)

  16. Supercritical Fluid Extraction of Plutonium and Americium from Soil

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    Fox, R.V.; Mincher, B.J.


    Supercritical fluid extraction (SFE) of plutonium and americium from soil was successfully demonstrated using supercritical fluid carbon dioxide solvent augmented with organophosphorus and beta-diketone complexants. Spiked Idaho soils were chemically and radiologically characterized, then extracted with supercritical fluid carbon dioxide at 2,900 psi and 65 C containing varying concentrations of tributyl phosphate (TBP) and thenoyltrifluoroacetone (TTA). A single 45 minute SFE with 2.7 mol% TBP and 3.2 mol% TTA provided as much as 88% {+-} 6.0 extraction of americium and 69% {+-} 5.0 extraction of plutonium. Use of 5.3 mol% TBP with 6.8 mol% of the more acidic beta-diketone hexafluoroacetylacetone (HFA) provided 95% {+-} 3.0 extraction of americium and 83% {+-} 5.0 extraction of plutonium in a single 45 minute SFE at 3,750 psi and 95 C. Sequential chemical extraction techniques were used to chemically characterize soil partitioning of plutonium and americium in pre-SFE soil samples. Sequential chemical extraction techniques demonstrated that spiked plutonium resides primarily (76.6%) in the sesquioxide fraction with minor amounts being absorbed by the oxidizable fraction (10.6%) and residual fractions (12.8%). Post-SFE soils subjected to sequential chemical extraction characterization demonstrated that 97% of the oxidizable, 78% of the sesquioxide and 80% of the residual plutonium could be removed using SFE. These preliminary results show that SFE may be an effective solvent extraction technique for removal of actinide contaminants from soil.

  17. Thermodynamic systematics of oxides of americium, curium, and neighboring elements

    Energy Technology Data Exchange (ETDEWEB)

    Morss, L.R.


    Recently-obtained calorimetric data on the sesquioxides and dioxides of americium and curium are summarized. These data are combined with other properties of the actinide elements to elucidate the stability relationships among these oxides and to predict the behavior of neighboring actinide oxides. 45 references, 4 figures, 5 tables.

  18. Reduction Rates for Higher Americium Oxidation States in Nitric Acid

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    Grimes, Travis Shane [Idaho National Lab. (INL), Idaho Falls, ID (United States); Mincher, Bruce Jay [Idaho National Lab. (INL), Idaho Falls, ID (United States); Schmitt, Nicholas C [Idaho National Lab. (INL), Idaho Falls, ID (United States)


    The stability of hexavalent americium was measured using multiple americium concentrations and nitric acid concentrations after contact with the strong oxidant sodium bismuthate. Contrary to our hypotheses Am(VI) was not reduced faster at higher americium concentrations, and the reduction was only zero-order at short time scales. Attempts to model the reduction kinetics using zero order kinetic models showed Am(VI) reduction in nitric acid is more complex than the autoreduction processes reported by others in perchloric acid. The classical zero-order reduction of Am(VI) was found here only for short times on the order of a few hours. We did show that the rate of Am(V) production was less than the rate of Am(VI) reduction, indicating that some Am(VI) undergoes two electron-reduction to Am(IV). We also monitored the Am(VI) reduction in contact with the organic diluent dodecane. A direct comparison of these results with those in the absence of the organic diluent showed the reduction rates for Am(VI) were not statistically different for both systems. Additional americium oxidations conducted in the presence of Ce(IV)/Ce(III) ions showed that Am(VI) is reduced without the typical growth of Am(V) observed in the systems sans Ce ion. This was an interesting result which suggests a potential new reduction/oxidation pathway for Am in the presence of Ce; however, these results were very preliminary, and will require additional experiments to understand the mechanism by which this occurs. Overall, these studies have shown that hexavalent americium is fundamentally stable enough in nitric acid to run a separations process. However, the complicated nature of the reduction pathways based on the system components is far from being rigorously understood.

  19. Ellipsometric study of silicon nitride on gallium arsenide (United States)

    Alterovitz, S. A.; Bu-Abbud, G. H.; Woollam, J. A.; Liu, D.; Chung, Y.; Langer, D.


    A method for optimizing the sensitivity of ellipsometric measurements for thin dielectric films on semiconductors is described in simple physical terms. The technique is demonstrated for the case of sputtered silicon nitride films on gallium arsenide.

  20. Superlattice Intermediate Band Solar Cell on Gallium Arsenide (United States)


    AFRL-RV-PS- AFRL-RV-PS- TR-2015-0048 TR-2015-0048 SUPERLATTICE INTERMEDIATE BAND SOLAR CELL ON GALLIUM ARSENIDE Alexandre Freundlich...SUBTITLE 5a. CONTRACT NUMBER FA9453-13-1-0232 Superlattice Intermediate Band Solar Cell on Gallium Arsenide 5b. GRANT NUMBER 5c. PROGRAM ELEMENT solar cell incorporating low dimensional structures made with dilute nitrogen alloys of III-V semiconductors is investigated theoretically and

  1. Research program on development of advanced treatment technology for americium-containing aqueous waste in NUCEF

    Energy Technology Data Exchange (ETDEWEB)

    Mineo, Hideaki; Matsumura, Tatsuro; Tsubata, Yasuhiro [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment


    A research program was prepared on the development of an advanced treatment process for the americium-containing concentrated aqueous waste in NUCEF, than allows americium recovery for the reuse and the reduction of TRU waste generation. A preliminary analysis was conducted on the separation requirements based on the components estimated for the waste. An R and D strategy was proposed from the view to reduce TRU waste generated in the processing that the highest priority is given on the control of TRU leakage such as americium into the effluent stream after americium recovery and the minimization of salt used in the separation over the decontamination of impurities from americium. The extraction chromatographic method was selected as a candidate technology for americium separation under the principle to use reagents that are functional in acidic conditions such as bidentate extractants of DHEDECMP, CMPO or diamides, considering the larger flexibilities in process modification and possible multi-component separation with compact equipment and the past achievements on the recovery of kg quantities of americium. Major R and D items extracted are screening and evaluation of extractants for americium and plutonium, optimization of separation conditions, selection of denitration method, equipment developments and development of solidification methods of discarded americium after reuse and of various kinds of separation residues. In order to cope these items, four steps of R and D program were proposed, i.e., fundamental experiment in beaker-scale on screening and evaluation of extractants, flowsheet study in bench-scale using simulated and small amount of americium aqueous waste solution to evaluate candidate process, americium recovery test in iron-shielded cell to be installed in NUCEF. It is objected to make recovery of 100g orders of americium used for research on fundamental TRU fuel properties. (J.P.N.)

  2. Supercritical Fluid Extraction of Plutonium and Americium from Soil

    Energy Technology Data Exchange (ETDEWEB)

    Fox, Robert Vincent; Mincher, Bruce Jay


    Supercritical fluid extraction (SFE) of plutonium and americium from soil was successfully demonstrated using supercritical fluid carbon dioxide solvent augmented with organophosphorus and beta-diketone complexants. Spiked Idaho soils were chemically and radiologically characterized, then extracted with supercritical fluid carbon dioxide at 2,900 psi and 65°C containing varying concentrations of tributyl phosphate (TBP) and thenoyltrifluoroacetone (TTA). A single 45 minute SFE with 2.7 mol% TBP and 3.2 mol% TTA provided as much as 88% ± 6.0 extraction of americium and 69% ± 5.0 extraction of plutonium. Use of 5.3 mol% TBP with 6.8 mol% of the more acidic beta-diketone hexafluoroacetylacetone (HFA) provided 95% ± 3.0 extraction of americium and 83% ± 5.0 extraction of plutonium in a single 45 minute SFE at 3,750 psi and 95°C. Sequential chemical extraction techniques were used to chemically characterize soil partitioning of plutonium and americium in pre-SFE soil samples. Sequential chemical extraction techniques demonstrated that spiked plutonium resides primarily (76.6%) in the sesquioxide fraction with minor amounts being absorbed by the oxidizable fraction (10.6%) and residual fractions (12.8%). Post-SFE soils subjected to sequential chemical extraction characterization demonstrated that 97% of the oxidizable, 78% of the sesquioxide and 80% of the residual plutonium could be removed using SFE. These preliminary results show that SFE may be an effective solvent extraction technique for removal of actinide contaminants from soil.

  3. Isolation of americium (5) oxalate compounds from solutions

    Energy Technology Data Exchange (ETDEWEB)

    Zubarev, V.G.; Krot, N.N.


    Certain conditions of americium (5) isolation with solutions of ammonia and KOH are studied as well as the attitude of hydroxide obtained to heating. Like neptunium (5) hydroxide americium (5) hydroxide probably has the formula AmO/sub 2/OHxxH/sub 2/O, where x is approximately equal to 2.3. It is established that during heating in the air up to 120 deg C hydroxide transforms into AmO/sub 2/. It is shown that in solutions with a high concentration of oxalate-ion americium stability in oxidation state +5 depends greatly on the pH of solution. Complex salts KAmO/sub 2/C/sub 2/O/sub 4/xxH/sub 2/O and CsAmO/sub 2/C/sub 2/O/sub 4/xxH/sub 2/O are synthesized. The identification is made according to the method of preparation and results of analysis of C/sub 2/O/sub 4//sup 2 -/: AmO/sub 2//sup +/ ratio. It is found that the salts are non-isomorphous to similar salts of pentavalent neptunium. CsAmO/sub 2/C/sub 2/O/sub 4/xxH/sub 2/O is identified in cubic crystal system with the lattice constant a=1.25 nm.

  4. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

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    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.


    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  5. Separation of americium and curium from complex chemical and radiochemical mixtures

    Energy Technology Data Exchange (ETDEWEB)

    Bochkarev, V.A.; Martynov, N.P.; Slivin, V.G.; Trikanov, A.E.; Fedyaeva, N.V.


    This work describes a method for separation and radiochemical purification of nanogram levels of americium and curium from complex chemical and radiochemical mixtures containing tens of milligrams of elements such as aluminum, iron, magnesium, calcium, barium, titanium, potassium, and others, microgram levels of uranium, neptunium, and plutonium, and fission products. Extraction coefficients of americium and curium from these elements are measured. The separation from the macrocomponents was carried out by extraction of americium and curium with butyric acid in the presence of sulfosalicylic acid. Uranium, neptunium, and plutonium were separated from hydrochloric acid solutions, while the rare earth elements were separated from lithium chloride solutions using a column of anion exchange resin AV-17. Alpha measurements were carried out on americium and curium deposited electrolytically on tantalum cathodes. The chemical yield of americium and curium was identical of greater than or equal to 94%, separation time approx. 8 h.

  6. Framework structures of interconnected layers in calcium iron arsenides. (United States)

    Stürzer, Tobias; Hieke, Christine; Löhnert, Catrin; Nitsche, Fabian; Stahl, Juliane; Maak, Christian; Pobel, Roman; Johrendt, Dirk


    The new calcium iron arsenide compounds Ca(n(n+1)/2)(Fe(1-x)M(x))(2+3n)M'(n(n-1)/2)As((n+1)(n+2)/2) (n = 1-3; M = Nb, Pd, Pt; M' = □, Pd, Pt) were synthesized and their crystal structures determined by single-crystal X-ray diffraction. The series demonstrates the structural flexibility of iron arsenide materials, which otherwise prefer layered structures, as is known from the family of iron-based superconductors. In the new compounds, iron arsenide tetrahedral layers are bridged by iron-centered pyramids, giving rise to so far unknown frameworks of interconnected FeAs layers. Channels within the structures are occupied with calcium and palladium or platinum, respectively. Common basic building blocks are identified that lead to a better understanding of the building principles of these structures and their relation to CaFe4As3.

  7. Uncertainty analysis of doses from ingestion of plutonium and americium. (United States)

    Puncher, M; Harrison, J D


    Uncertainty analyses have been performed on the biokinetic model for americium currently used by the International Commission on Radiological Protection (ICRP), and the model for plutonium recently derived by Leggett, considering acute intakes by ingestion by adult members of the public. The analyses calculated distributions of doses per unit intake. Those parameters having the greatest impact on prospective doses were identified by sensitivity analysis; the most important were the fraction absorbed from the alimentary tract, f(1), and rates of uptake from blood to bone surfaces. Probability distributions were selected based on the observed distribution of plutonium and americium in human subjects where possible; the distributions for f(1) reflected uncertainty on the average value of this parameter for non-specified plutonium and americium compounds ingested by adult members of the public. The calculated distributions of effective doses for ingested (239)Pu and (241)Am were well described by log-normal distributions, with doses varying by around a factor of 3 above and below the central values; the distributions contain the current ICRP Publication 67 dose coefficients for ingestion of (239)Pu and (241)Am by adult members of the public. Uncertainty on f(1) values had the greatest impact on doses, particularly effective dose. It is concluded that: (1) more precise data on f(1) values would have a greater effect in reducing uncertainties on doses from ingested (239)Pu and (241)Am, than reducing uncertainty on other model parameter values and (2) the results support the dose coefficients (Sv Bq(-1) intake) derived by ICRP for ingestion of (239)Pu and (241)Am by adult members of the public.

  8. Kilogram-scale purification of americium by ion exchange

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    Wheelwright, E. J.


    Sequential anion and cation exchange processes have been used for the final purification of /sup 241/Am recovered during the reprocessing of aged plutonium metallurgical scrap. Plutonium was removed by absorption of Dowex 1, X-3.5 (30 to 50 mesh) anion exchange resin from 6.5 to 7.5 M HNO/sub 3/ feed solution. Following a water dilution to 0.75 to 1.0 M HNO/sub 3/, americium was absorbed on Dowex 50W, X-8 (50 to 100 mesh) cation exchange resion. Final purification was accomplished by elution of the absorbed band down 3 to 4 successive beds of the same resin, preloaded with Zn/sup 2 +/, with an NH/sub 4/OH buffered chelating agent. The recovery of mixed /sup 241/Am-/sup 243/Am from power reactor reprocessing waste has been demonstrated. Solvent extraction was used to recover a HNO/sub 3/ solution of mixed lanthanides and actinides from waste generated by the reprocessng of 13.5 tons of Shippingport Power Reactor blanket fuel. Sequential cation exchange band-displacement processes were then used to separate americium and curium from the lanthanides and then to separate approx. 60 g of /sup 244/Cm from 1000 g of mixed /sup 241/Am-/sup 243/Am.

  9. Hexavalent Americium Recovery Using Copper(III) Periodate

    Energy Technology Data Exchange (ETDEWEB)

    McCann, Kevin; Brigham, Derek M.; Morrison, Samuel; Braley, Jenifer C.


    Separation of americium from the lanthanides is considered one of the most difficult separation steps in closing the nuclear fuel cycle. One approach to this separation could involve oxidizing americium to the hexavalent state to form a linear dioxo cation while the lanthanides remain as trivalent ions. This work considers aqueous soluble Cu3+ periodate as an oxidant under molar nitric acid conditions to separate hexavalent Am with diamyl amylphosphonate (DAAP) in n-dodecane. Initial studies assessed the kinetics of Cu3+ periodate auto-reduction in acidic media to aid in development of the solvent extraction system. Following characterization of the Cu3+ periodate oxidant, solvent extraction studies optimized the recovery of Am from varied nitric acid media and in the presence of other fission product, or fission product surrogate, species. Short aqueous/organic contact times encouraged successful recovery of Am (distribution values as high as 2) from nitric acid media in the absence of redox active fission products. In the presence of a post-PUREX simulant aqueous feed, precipitation of tetravalent species (Ce, Ru, Zr) occurred and the distribution values of 241Am were suppressed, suggesting some oxidizing capacity of the Cu3+ periodate is significantly consumed by other redox active metals in the simulant. The manuscript demonstrates Cu3+ periodate as a potentially viable oxidant for Am oxidation and recovery and notes the consumption of oxidizing capacity observed in the presence of the post-PUREX simulant feed will need to be addressed for any approach seeking to oxidize Am for separations relevant to the nuclear fuel cycle.

  10. Oxidative Alkaline leaching of Americium from simulated high-level nuclear waste sludges

    Energy Technology Data Exchange (ETDEWEB)

    Reed, Wendy A.; Garnov, Alexander Yu.; Rao, Linfeng; Nash, Kenneth L.; Bond, Andrew H.


    Oxidative alkaline leaching has been proposed to pre-treat the high-level nuclear waste sludges to remove some of the problematic (e.g., Cr) and/or non-radioactive (e.g., Na, Al) constituents before vitrification. It is critical to understand the behavior of actinides, americium and plutonium in particular, in oxidative alkaline leaching. We have studied the leaching behavior of americium from four different sludge simulants (BiPO{sub 4}, BiPO{sub 4 modified}, Redox, PUREX) using potassium permanganate and potassium persulfate in alkaline solutions. Up to 60% of americium sorbed onto the simulants is leached from the sludges by alkaline persulfate and permanganate. The percentage of americium leached increases with [NaOH] (between 1.0 and 5.0 M). The initial rate of americium leaching by potassium persulfate increases in the order BiPO{sub 4} sludge < Redox sludge < PUREX sludge. The data are most consistent with oxidation of Am{sup 3+} in the sludge to either AmO{sub 2}{sup +} or AmO{sub 2}{sup 2+} in solution. Though neither of these species is expected to exhibit long-term stability in solution, the potential for mobilization of americium from sludge samples would have to be accommodated in the design of any oxidative leaching process for real sludge samples.

  11. The transmutation of americium: the Ecrix experiments in Phenix; Transmutation de l'americium: les experiences ecrix dans Phenix

    Energy Technology Data Exchange (ETDEWEB)

    Garnier, J.C.; Schmidt, N. [CEA Cadarache, Dept. d' Etudes des Combustibles (DEC/SESC), 13 - Saint-Paul-lez-Durance (France); Croixmarie, Y.; Ottaviani, J.P. [CEA Cadarache, Dept. d' Etudes des Combustibles (DEC/SPUA), 13 - Saint-Paul-lez-Durance (France); Varaine, F.; Saint Jean, C. de [CEA Cadarache, Dept. d' Etudes des Reacteurs (DER/SPRC), 13 - Saint-Paul-lez-Durance (France)


    The first americium transmutation experiment in a specific target in PHENIX will occur with the ECRIX-B and ECRIX-H experiments. Beside material testing, the objective is also to represent a concept of transmutation whose specificity is to enhance the kinetics of transmutation by using a moderated spectrum. The moderator materials will be {sup 11}B{sub 4}C and CaH{sub 2} for ECRIX-B and ECRIXH respectively, the irradiation conditions have been predicted for both the neutronics and thermal. The targets (MgO-AmO{sub X} pellets) are manufactured in the ATALANTE laboratory and the design is performed according to the PHENIX operating conditions. (authors)

  12. A Review of Liquid Phase Epitaxial Grown Gallium Arsenide


    Alexiev, D.; Prokopovich, D. A.; Thomson, S.; Mo, L.; Rosenfeld, A B; Reinhard, M


    Liquid phase epitaxy of gallium arsenide (LPE GaAs) has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, it is interesting to note that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point ...

  13. Thermal cycling, DLTS, and PEC studies on LEC gallium arsenide. [GaAs:Si

    Energy Technology Data Exchange (ETDEWEB)

    Santhanaraghavan, P. (Anna Univ., Madras (India). Crystal Growth Centre); Sankaranarayanan, K. (Anna Univ., Madras (India). Crystal Growth Centre); Arokiaraj, J. (Anna Univ., Madras (India). Crystal Growth Centre); Anbukumar, S. (Anna Univ., Madras (India). Crystal Growth Centre); Kumar, J. (Anna Univ., Madras (India). Crystal Growth Centre); Ramasamy, P. (Anna Univ., Madras (India). Crystal Growth Centre)


    This paper discusses the growth of gallium arsenide single crystals using the LEC technique. The Semi-insulating gallium arsenide was studied. The defect investigations were made by DLTS and etching studies. The variation of deep level concentration along the wafer was estimated using DLTS. The fabrication and efficiency of the PEC Solar cells are also reported. (orig.)

  14. Effect of americium-241 on luminous bacteria. Role of peroxides

    Energy Technology Data Exchange (ETDEWEB)

    Alexandrova, M., E-mail: maka-alexandrova@rambler.r [Siberian Federal University, Svobodny 79, 660041 Krasnoyarsk (Russian Federation); Rozhko, T. [Siberian Federal University, Svobodny 79, 660041 Krasnoyarsk (Russian Federation); Vydryakova, G. [Institute of Biophysics SB RAS, Akademgorodok 50, 660036 Krasnoyarsk (Russian Federation); Kudryasheva, N. [Siberian Federal University, Svobodny 79, 660041 Krasnoyarsk (Russian Federation); Institute of Biophysics SB RAS, Akademgorodok 50, 660036 Krasnoyarsk (Russian Federation)


    The effect of americium-241 ({sup 241}Am), an alpha-emitting radionuclide of high specific activity, on luminous bacteria Photobacterium phosphoreum was studied. Traces of {sup 241}Am in nutrient media (0.16-6.67 kBq/L) suppressed the growth of bacteria, but enhanced luminescence intensity and quantum yield at room temperature. Lower temperature (4 {sup o}C) increased the time of bacterial luminescence and revealed a stage of bioluminescence inhibition after 150 h of bioluminescence registration start. The role of conditions of exposure the bacterial cells to the {sup 241}Am is discussed. The effect of {sup 241}Am on luminous bacteria was attributed to peroxide compounds generated in water solutions as secondary products of radioactive decay. Increase of peroxide concentration in {sup 241}Am solutions was demonstrated; and the similarity of {sup 241}Am and hydrogen peroxide effects on bacterial luminescence was revealed. The study provides a scientific basis for elaboration of bioluminescence-based assay to monitor radiotoxicity of alpha-emitting radionuclides in aquatic solutions. - Highlights: {yields} Am-241 in water solutions (A = 0.16-6.7 kBq/L) suppresses bacterial growth.{yields} Am-241 (A = 0.16-6.7 kBq/L) stimulate bacterial luminescence. {yields} Peroxides, secondary radiolysis products, cause increase of bacterial luminescence.

  15. Particulate distribution of plutonium and americium in surface waters from the Spanish Mediterranean coast

    Energy Technology Data Exchange (ETDEWEB)

    Molero, J.; Sanchez-Cabeza, J.A.; Merino, J.; Vidal-Quadras, A. [Universidad Autonoma de Barcelona (Spain); Vives Batlle, J.; Mitchell, P.I. [University Coll., Dublin (Ireland)


    Measurements of the particulate distribution of plutonium and americium in Spanish Mediterranean coastal waters have been carried out. Plutonium-239,340 and {sup 241}Am concentrations have been measured in suspended particulate matter by filtering (< 0.22 {mu}m) large volume (200-300 litres) sea water samples. Results indicate that particulate plutonium constitutes on average 11 {+-} 4% of the total concentration in sea water. In the case of americium this percentage rises to 45 {+-} 14%. From the {sup 241}Am/{sup 239,240}Pu activity ratios it is clear that suspended particulate matter is enriched in {sup 241}Am relative to {sup 239,240}Pu by a factor 8 {+-} 4. Plutonium and americium in surface Mediterranean coastal waters appear to be fractionated as they present a different transfer rate to the particles. Our measurements allowed us to estimate sediment-water distribution coefficients (K{sub d}), which are a key parameter to interpret differences between the behaviour of plutonium and americium in sea water. Distribution coefficients K{sub d} have been estimated to be (1.4 {+-} 0.5) x 10{sup 5} litres kg{sup -1} for plutonium and (0.9 {+-} 0.5) x 10{sup 6} litres kg{sup -1} for americium in surface Mediterranean coastal waters. (author).

  16. Isotopic and elemental composition of plutonium/americium oxides influence pulmonary and extra-pulmonary distribution after inhalation in rats. (United States)

    Van der Meeren, A; Grémy, O


    The biodistribution of plutonium and americium has been studied in a rat model after inhalation of two PuO(2) powders in lungs and extra-pulmonary organs from 3 d to 3 mo. The main difference between the two powders was the content of americium (approximately 46% and 4.5% of total alpha activity). The PuO(2) with a higher proportion of americium shows an accelerated transfer of activity from lungs to blood as compared to PuO(2) with the lower americium content, illustrated by increased urinary excretion and higher bone and liver actinide retention. The total alpha activity measured reflects mostly the americium biological behavior. The activity contained in epithelial lining fluid, recovered in the acellular phase of broncho-alveolar lavages, mainly contains americium, whereas plutonium remains trapped in macrophages. Epithelial lining fluid could represent a transitional pulmonary compartment prior to translocation of actinides to the blood and subsequent deposition in extra-pulmonary retention organs. In addition, differential behaviors of plutonium and americium are also observed between the PuO(2) powders with a higher dissolution rate for both plutonium and americium being obtained for the PuO(2) with the highest americium content. Our results indicate that the biological behavior of plutonium and americium after translocation into blood differ two-fold: (1) for the two actinides for the same PuO(2) aerosol, and (2) for the same actinide from the two different aerosols. These results highlight the importance of considering the specific behavior of each contaminant after accidental pulmonary intake when assessing extra-pulmonary deposits from the level of activity excreted in urine or for therapeutic strategy decisions.

  17. Laser and electron beam processing of silicon and gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Narayan, J.


    Laser (photon) and electron beams provide a controlled source of heat by which surface layers of silicon and gallium arsenide can be rapidly melted and cooled with rates exceeding 10/sup 80/C/sec. The melting process has been used to remove displacement damage in ion implanted Si and GaAs, to remove dislocations, loops and precipitates in silicon and to study impurity segregation and solubility limits. The mechanisms associated with various phenomena will be examined. The possible impact of laser and electron beam processing on device technology, particularly with respect to solar cells is discussed.

  18. Strategic Review of Arsenide, Phosphide and Nitride MOSFETs

    Directory of Open Access Journals (Sweden)

    Gourab Dutta


    Full Text Available Metal oxide semiconductor field effect transistor used as an amplifier and switch uses Si primarily as a channel material for its very stable oxide SiO2. In-spite of many advantages there are some restrictions for Si MOS, so the world is approaching towards compound semiconductor for higher frequency and current. The development of compound semiconductor metal oxide semiconductor is also facing critical problems due to the lack of availability of proper gate oxide material. Research is being conducted on arsenide and phosphide metal oxide semiconductor field effect transistor. Nitride channel MOS are in focus due to their high band gap, high current and high temperature uses.

  19. Lattice parameters guide superconductivity in iron-arsenides (United States)

    Konzen, Lance M. N.; Sefat, Athena S.


    The discovery of superconducting materials has led to their use in technological marvels such as magnetic-field sensors in MRI machines, powerful research magnets, short transmission cables, and high-speed trains. Despite such applications, the uses of superconductors are not widespread because they function much below room-temperature, hence the costly cooling. Since the discovery of Cu- and Fe-based high-temperature superconductors (HTS), much intense effort has tried to explain and understand the superconducting phenomenon. While no exact explanations are given, several trends are reported in relation to the materials basis in magnetism and spin excitations. In fact, most HTS have antiferromagnetic undoped ‘parent’ materials that undergo a superconducting transition upon small chemical substitutions in them. As it is currently unclear which ‘dopants’ can favor superconductivity, this manuscript investigates crystal structure changes upon chemical substitutions, to find clues in lattice parameters for the superconducting occurrence. We review the chemical substitution effects on the crystal lattice of iron-arsenide-based crystals (2008 to present). We note that (a) HTS compounds have nearly tetragonal structures with a-lattice parameter close to 4 Å, and (b) superconductivity can depend strongly on the c-lattice parameter changes with chemical substitution. For example, a decrease in c-lattice parameter is required to induce ‘in-plane’ superconductivity. The review of lattice parameter trends in iron-arsenides presented here should guide synthesis of new materials and provoke theoretical input, giving clues for HTS.

  20. Macroscopic diffusion models for precipitation in crystalline gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Kimmerle, Sven-Joachim Wolfgang


    Based on a thermodynamically consistent model for precipitation in gallium arsenide crystals including surface tension and bulk stresses by Dreyer and Duderstadt, we propose two different mathematical models to describe the size evolution of liquid droplets in a crystalline solid. The first model treats the diffusion-controlled regime of interface motion, while the second model is concerned with the interface-controlled regime of interface motion. Our models take care of conservation of mass and substance. These models generalise the well-known Mullins- Sekerka model for Ostwald ripening. We concentrate on arsenic-rich liquid spherical droplets in a gallium arsenide crystal. Droplets can shrink or grow with time but the centres of droplets remain fixed. The liquid is assumed to be homogeneous in space. Due to different scales for typical distances between droplets and typical radii of liquid droplets we can derive formally so-called mean field models. For a model in the diffusion-controlled regime we prove this limit by homogenisation techniques under plausible assumptions. These mean field models generalise the Lifshitz-Slyozov-Wagner model, which can be derived from the Mullins-Sekerka model rigorously, and is well understood. Mean field models capture the main properties of our system and are well adapted for numerics and further analysis. We determine possible equilibria and discuss their stability. Numerical evidence suggests in which case which one of the two regimes might be appropriate to the experimental situation. (orig.)

  1. National low-level waste management program radionuclide report series, Volume 14: Americium-241

    Energy Technology Data Exchange (ETDEWEB)

    Winberg, M.R.; Garcia, R.S.


    This report, Volume 14 of the National Low-Level Waste Management Program Radionuclide Report Series, discusses the radiological and chemical characteristics of americium-241 ({sup 241}Am). This report also includes discussions about waste types and forms in which {sup 241}Am can be found and {sup 241}Am behavior in the environment and in the human body.

  2. Understanding the Chemistry of Uncommon Americium Oxidation States for Application to Actinide/Lanthanide Separations

    Energy Technology Data Exchange (ETDEWEB)

    Leigh Martin; Bruce J. Mincher; Nicholas C. Schmitt


    A spectroscopic study of the stability of Am(V) and Am(VI) produced by oxidizing Am(III) with sodium bismuthate is presented, varying the initial americium concentration, temperature and length of the oxidation was seen to have profound effects on the resultant solutions.

  3. First principles predictions of intrinsic defects in aluminum arsenide, AlAs : numerical supplement.

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter Andrew


    This Report presents numerical tables summarizing properties of intrinsic defects in aluminum arsenide, AlAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz, 'First principles predictions of intrinsic defects in Aluminum Arsenide, AlAs', Materials Research Society Symposia Proceedings 1370 (2011; SAND2011-2436C), and intended for use as reference tables for a defect physics package in device models.

  4. Temperature dependence of carrier capture by defects in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Modine, Normand A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)


    This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structure that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.

  5. Methods for forming group III-arsenide-nitride semiconductor materials (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)


    Methods are disclosed for forming Group III-arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.


    Directory of Open Access Journals (Sweden)

    E. B. Ershov


    Full Text Available The article considers, on the basis of experimental data, the issue of assessing dose burdens to the skin basal layer in conditions of its permanent contamination with solutions of plutonium-239 and americium-241 and subsequent decontamination.

  7. Influence of biofilms on migration of uranium, americium and europium in the environment; Einfluss von Biofilmen auf das Migrationsverhalten von Uran, Americium und Europium in der Umwelt

    Energy Technology Data Exchange (ETDEWEB)

    Baumann, Nils; Zirnstein, Isabel; Arnold, Thuro


    The report on the influence of biofilms on migration of uranium, americium and europium in the environment deals with the contamination problems of uranium mines such as SDAG WISMUT in Saxonia and Thuringia. In mine waters microorganisms form a complex microbiological biocoenosis in spite of low pH values and high heavy metal concentrations including high uranium concentrations. The analyses used microbiological methods like confocal laser scanning microscopy and molecular-biological techniques. The interactions of microorganism with fluorescent radioactive heavy metal ions were performed with TRLFS (time resolved laser-induced fluorescence spectroscopy).

  8. Standard test method for quantitative determination of americium 241 in plutonium by Gamma-Ray spectrometry

    CERN Document Server

    American Society for Testing and Materials. Philadelphia


    1.1 This test method covers the quantitative determination of americium 241 by gamma-ray spectrometry in plutonium nitrate solution samples that do not contain significant amounts of radioactive fission products or other high specific activity gamma-ray emitters. 1.2 This test method can be used to determine the americium 241 in samples of plutonium metal, oxide and other solid forms, when the solid is appropriately sampled and dissolved. 1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

  9. Calcium and zinc DTPA administration for internal contamination with plutonium-238 and americium-241. (United States)

    Kazzi, Ziad N; Heyl, Alexander; Ruprecht, Johann


    The accidental or intentional release of plutonium or americium can cause acute and long term adverse health effects if they enter the human body by ingestion, inhalation, or injection. These effects can be prevented by rapid removal of these radionuclides by chelators such as calcium or zinc diethylenetriaminepentaacetate (calcium or zinc DTPA). These compounds have been shown to be efficacious in enhancing the elimination of members of the actinide family particularly plutonium and americium when administered intravenously or by nebulizer. The efficacy and adverse effects profile depend on several factors that include the route of internalization of the actinide, the type, and route time of administration of the chelator, and whether the calcium or zinc salt of DTPA is used. Current and future research efforts should be directed at overcoming limitations associated with the use of these complex drugs by using innovative methods that can enhance their structural and therapeutic properties.

  10. Final Radiological Assessment of External Exposure for CLEAR-Line Americium Recovery Operations

    Energy Technology Data Exchange (ETDEWEB)

    Davis, Adam C. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Belooussova, Olga N. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Hetrick, Lucas Duane [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)


    Los Alamos National Laboratory is currently planning to implement an americium recovery program. The americium, ordinarily isotopically pure 241Am, would be extracted from existing Pu materials, converted to an oxide and shipped to support fabrication of americium oxide-beryllium neutron sources. These operations would occur in the currently proposed Chloride Extraction and Actinide Recovery (CLEAR) line of glove boxes. This glove box line would be collocated with the currently-operational Experimental Chloride Extraction Line (EXCEL). The focus of this document is to provide an in-depth assessment of the currently planned radiation protection measures and to determine whether or not further design work is required to satisfy design-goal and ALARA requirements. Further, this document presents a history of americium recovery operations in the Department of Energy and high-level descriptions of the CLEAR line operations to provide a basis of comparison. Under the working assumptions adopted by this study, it was found that the evaluated design appears to mitigate doses to a level that satisfies the ALARA-in-design requirements of 10 CFR 835 as implemented by the Los Alamos National Laboratory procedure P121. The analyses indicate that extremity doses would also meet design requirements. Dose-rate calculations were performed using the radiation transport code MCNP5 and doses were estimated using a time-motion study developed in consort with the subject matter expert. A copy of this report and all supporting documentation are located on the Radiological Engineering server at Y:\\Rad Engineering\\2013 PROJECTS\\TA-55 Clear Line.

  11. On the Convergence of the Electronic Structure Properties of the FCC Americium (001) Surface


    Gao, Da; Ray, Asok K.


    Electronic and magnetic properties of the fcc Americium (001) surface have been investigated via full-potential all-electron density-functional electronic structure calculations at both scalar and fully relativistic levels. Effects of various theoretical approximations on the fcc Am (001) surface properties have been thoroughly examined. The ground state of fcc Am (001) surface is found to be anti-ferromagnetic with spin-orbit coupling included (AFM-SO). At the ground state, the magnetic mome...

  12. Design of Indium Arsenide nanowire sensors for pH and biological sensing and low temperature transport through p-doped Indium Arsenide nanowires

    DEFF Research Database (Denmark)

    Upadhyay, Shivendra

    remains the primary material of choice. This research is about investigating Indium Arsenide nanowires as alternative platform for sensing charged species - chemical and biological, in solution. Starting with nanowires grown via molecular beam epitaxy in an ultra-high vacuum chamber, we discuss...

  13. Structural, elastic, electronic properties and stability trends of 1111-like silicide arsenides and germanide arsenides MCuXAs (M = Ti, Zr, Hf; X = Si, Ge) from first principles

    Energy Technology Data Exchange (ETDEWEB)

    Bannikov, V.V.; Shein, I.R. [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, 620990 Ekaterinburg (Russian Federation); Ivanovskii, A.L., E-mail: [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, 620990 Ekaterinburg (Russian Federation)


    Highlights: Black-Right-Pointing-Pointer Silicide arsenides and germanide arsenides of Ti, Zr, Hf are probed from first principles. Black-Right-Pointing-Pointer Structural, elastic, electronic properties and stability trends are evaluated. Black-Right-Pointing-Pointer Bulk moduli of HfCuSiAs and HfCuGeAs are the largest among all 1111-like phases. Black-Right-Pointing-Pointer Chemical bonding is analyzed. - Abstract: The tetragonal (s.g. I4/nmm; no. 129) silicide arsenide ZrCuSiAs is well known as a structural type of the broad family of so-called 1111-like quaternary phases which includes now more than 150 representatives. These materials demonstrate a rich variety of outstanding physical properties (from p-type transparent semiconductors to high-temperature Fe-based superconductors) and attracted a great interest as promising candidates for a broad range of applications. At the same time, the data about the electronic and elastic properties of the ZrCuSiAs phase itself, as well as of related silicide arsenides and germanide arsenides are still very limited. Here for a series of six isostructural and isoelectronic 1111-like phases which includes both synthesized (ZrCuSiAs, HfCuSiAs, ZrCuGeAs, and HfCuGeAs) and hypothetical (TiCuSiAs and TiCuGeAs) materials, systematical studies of their structural, elastic, electronic properties and stability trends are performed by means of first-principles calculations.

  14. Gallium Arsenide (GaAs) Quantum Photonic Waveguide Circuits

    CERN Document Server

    Wang, Jianwei; Jiang, Pisu; Bonneau, Damien; Engin, Erman; Silverstone, Joshua W; Lermer, Matthias; Beetz, Johannes; Kamp, Martin; Hofling, Sven; Tanner, Michael G; Natarajan, Chandra M; Hadfield, Robert H; Dorenbos, Sander N; Zwiller, Val; O'Brien, Jeremy L; Thompson, Mark G


    Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light. The gallium arsenide (GaAs) material system is a promising technology platform, and has already successfully demonstrated key components including waveguide integrated single-photon sources and integrated single-photon detectors. However, quantum circuits capable of manipulating quantum states of light have so far not been investigated in this material system. Here, we report GaAs photonic circuits for the manipulation of single-photon and two-photon states. Two-photon quantum interference with a visibility of 94.9 +/- 1.3% was observed in GaAs directional couplers. Classical and quantum interference fringes with visibilities of 98.6 +/- 1.3% and 84.4 +/- 1.5% respectively were demonstrated in Mach-Zehnder interferometers exploiting the electro-optic Pockels effect. This w...

  15. Gallium arsenide pilot line for high performance components (United States)


    The Gallium Arsenide Pilot Line for High Performance Components (Pilot Line III) is to develop a facility for the fabrication of GaAs logic and memory chips. The first thirty months of this contract are now complete, and this report covers the period from March 27 through September 24, 1989. Similar to the PT-2M SRAM function for memories, the six logic circuits of PT-2L and PT-2M have served their functions as stepping stones toward the custom, standard cell, and cell array logic circuits. All but one of these circuits was right first time; the remaining circuit had a layout error due to a bug in the design rule checker that has since been fixed. The working devices all function over the full temperature range from -55 to 125 C. They all comfortably meet the 200 MHz requirement. They do not solidly conform to the required input and output voltage levels, particularly Vih. It is known that these circuits were designed with the older design models and that they came from an era where the DFET thresholds were often not on target.

  16. Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million

    CERN Document Server

    Guha, Biswarup; Cadiz, Fabian; Morgenroth, Laurence; Ulin, Vladimir; Berkovitz, Vladimir; Lemaître, Aristide; Gomez, Carmen; Amo, Alberto; Combrié, Sylvian; Gérard, Bruno; Leo, Giuseppe; Favero, Ivan


    Gallium Arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro and nano-scale, they allow strong interaction with quantum dots and quantum wells, and promise to result in stunning devices. However gallium arsenide optical structures presently exhibit lower performances than their silicon-based counterparts, notably in nanophotonics where the surface plays a chief role. Here we report on advanced surface control of miniature gallium arsenide optical resonators, using two distinct techniques that produce permanent results. One leads to extend the lifetime of free-carriers and enhance luminescence, while the other strongly reduces surface absorption originating from mid-gap states and enables ultra-low optical dissipation devices. With such surface control, the quality factor of wavelength-sized optical disk resonators is observed to rise up to six million at telecom wavelength, greatly surpassing previous realizations and opening n...

  17. A study of the applicability of gallium arsenide and silicon carbide as aerospace sensor materials (United States)

    Hurley, John S.


    Most of the piezoresistive sensors, to date, are made of silicon and germanium. Unfortunately, such materials are severly restricted in high temperature environments. By comparing the effects of temperature on the impurity concentrations and piezoresistive coefficients of silicon, gallium arsenide, and silicon carbide, it is being determined if gallium arsenide and silicon carbide are better suited materials for piezoresistive sensors in high temperature environments. The results show that the melting point for gallium arsenide prevents it from solely being used in high temperature situations, however, when used in the alloy Al(x)Ga(1-x)As, not only the advantage of the wider energy band gas is obtained, but also the higher desire melting temperature. Silicon carbide, with its wide energy band gap and higher melting temperature suggests promise as a high temperature piezoresistive sensor.

  18. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    Energy Technology Data Exchange (ETDEWEB)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna [School of Microelectronic Engineering, Universiti Malaysia Perlis, Kampus Pauh Putra, 02600 Arau, Perlis (Malaysia)


    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  19. Magnetoelectric effect in layered structures of amorphous ferromagnetic alloy and gallium arsenide (United States)

    Bichurin, M. I.; Petrov, V. M.; Leontiev, V. S.; Ivanov, S. N.; Sokolov, O. V.


    A paper devotes to theoretical and experimental studying the magnetoelectric interaction in layered structures of amorphous ferromagnetic alloy and single- crystal gallium arsenide. The authors investigated the magnetoelectric effect in the (100) plane of gallium arsenide in the electromechanical resonance range of 200-240 kHz and obtained maximal ME voltage coefficient of 120 V/A at bias field equaled 3.6 kA/m for the direction parallel to the [011] axis. Also the magnetoelectric effect in the (110) and (111) planes is discussed. The results can be used for design of new electronic devices based on the magnetostrictive-semiconductor materials.

  20. High-field phase-diagram of Fe arsenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Y.J.; Jaroszynski, J.; Yamamoto, A.; Gurevich, A.; Riggs, S.C.; Boebinger, G.S.; Larbalestier, D. [National High Magnetic Field Laboratory, Florida State University, Tallahassee-FL 32310 (United States); Wen, H.H. [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Zhigadlo, N.D.; Katrych, S.; Bukowski, Z.; Karpinski, J. [Laboratory for Solid State Physics, ETH Zuerich, CH-8093 Zuerich (Switzerland); Liu, R.H.; Chen, H.; Chen, X.H. [Hefei National Laboratory for Physical Science a Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Balicas, L., E-mail: balicas@magnet.fsu.ed [National High Magnetic Field Laboratory, Florida State University, Tallahassee-FL 32310 (United States)


    Here, we report an overview of the phase-diagram of single-layered and double-layered Fe arsenide superconductors at high magnetic fields. Our systematic magneto-transport measurements of polycrystalline SmFeAsO{sub 1-x}F{sub x} at different doping levels confirm the upward curvature of the upper critical magnetic field H{sub c2}(T) as a function of temperature T defining the phase boundary between the superconducting and metallic states for crystallites with the ab planes oriented nearly perpendicular to the magnetic field. We further show from measurements on single-crystals that this feature, which was interpreted in terms of the existence of two superconducting gaps, is ubiquitous among both series of single- and double-layered compounds. In all compounds explored by us the zero temperature upper critical field H{sub c2}(0), estimated either through the Ginzburg-Landau or the Werthamer-Helfand-Hohenberg single gap theories, strongly surpasses the weak-coupling Pauli paramagnetic limiting field. This clearly indicates the strong-coupling nature of the superconducting state and the importance of magnetic correlations for these materials. Our measurements indicate that the superconducting anisotropy, as estimated through the ratio of the effective masses gamma = (m{sub c}/m{sub ab}){sup 1/2} for carriers moving along the c-axis and the ab-planes, respectively, is relatively modest as compared to the high-T{sub c} cuprates, but it is temperature, field and even doping dependent. Finally, our preliminary estimations of the irreversibility field H{sub m}(T), separating the vortex-solid from the vortex-liquid phase in the single-layered compounds, indicates that it is well described by the melting of a vortex lattice in a moderately anisotropic uniaxial superconductor.

  1. Progress to a Gallium-Arsenide Deep-Center Laser

    Directory of Open Access Journals (Sweden)

    Janet L. Pan


    Full Text Available Although photoluminescence from gallium-arsenide (GaAs deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known properties: nature of deep-center complexes, Franck-Condon effect, hotoluminescence. Second, we describe our recent work: insensitivity of photoluminescence with heating, striking differences between electroluminescence and photoluminescence, correlation between transitions to deep-states and absence of bandgap-emission. Room-temperature stimulated-emission from GaAs deep-centers was observed at low electrical injection, and could be tuned from the bandgap to half-the-bandgap (900–1,600 nm by changing the electrical injection. The first GaAs deep-center laser was demonstrated with electrical injection, and exhibited a threshold of less than 27 mA/cm2 in continuous-wave mode at room temperature at the important 1.54 μm fiber-optic wavelength. This small injection for laser action was explained by fast depopulation of the lower state of the optical transition (fast capture of free holes onto deep-centers, which maintains the population inversion. The evidence for laser action included: superlinear L-I curve, quasi-Fermi level separations satisfying Bernard-Duraffourg’s criterion, optical gains larger than known significant losses, clamping of the optical-emission from lossy modes unable to reach laser action, pinning of the population distribution during laser action.

  2. MARIOS: Irradiation of UO{sub 2} containing 15% americium at well defined temperature

    Energy Technology Data Exchange (ETDEWEB)

    D' Agata, E., E-mail: [European Commission, Joint Research Centre, Institute for Energy - P.O. Box 2, 1755 ZG Petten (Netherlands); Hania, P.R. [Nuclear Research and Consultancy Group, P.O. Box 25, 1755 ZG Petten (Netherlands); Bejaoui, S. [Commissariat a l' Energie Atomique, DEC CEA-Cadarache, 13108 St. Paul lez Durance Cedex (France); Sciolla, C.; Wyatt, T.; Hannink, M.H.C. [Nuclear Research and Consultancy Group, P.O. Box 25, 1755 ZG Petten (Netherlands); Herlet, N.; Jankowiak, A. [Commissariat a l' Energie Atomique DTEC CEA Marcoule, 30207 Bagnols sur Ceze Cedex (France); Klaassen, F.C. [Nuclear Research and Consultancy Group, P.O. Box 25, 1755 ZG Petten (Netherlands); Bonnerot, J.-M. [Commissariat a l' Energie Atomique, DEC CEA-Cadarache, 13108 St. Paul lez Durance Cedex (France)


    Highlights: Black-Right-Pointing-Pointer MARIOS is designed to check the behaviour of Minor Actinide Blanket Module concept. Black-Right-Pointing-Pointer Main requirement of the experiment is an accurate control of the temperature. Black-Right-Pointing-Pointer The swelling and the helium release will be the main output of the experiment. Black-Right-Pointing-Pointer A complementary experiment (DIAMINO), will be performed in the next future. - Abstract: Americium is a strong contributor to the long term radiotoxicity of high activity nuclear waste. Transmutation by irradiation in nuclear reactors of long-lived nuclides like {sup 241}Am is, therefore, an option for the reduction of radiotoxicity and residual power packages as well as the repository area. The MARIOS irradiation experiment is the latest of a series of experiments on americium transmutation (e.g. EFTTRA-T4, EFTTRA-T4bis, HELIOS). MARIOS experiment is carried out in the framework of the 4-year project FAIRFUELS of the EURATOM 7th Framework Programme (FP7). During the past years of experimental work in the field of transmutation and tests of innovative nuclear fuel containing americium, the release or trapping of helium as well as swelling has shown to be the key issue for the design of such kinds of target. Therefore, the main objective of the MARIOS experiment is to study the in-pile behaviour of UO{sub 2} containing minor actinides (MAs) in order to gain knowledge on the role of the microstructure and of the temperature on the gas release and on fuel swelling. The MARIOS experiment will be conducted in the HFR (high flux reactor) in Petten (The Netherlands) and will start in the beginning of 2011. It has been planned that the experiment will last 11 cycles, corresponding to 11 months. This paper covers the description of the objective of the experiment, as well as a general description of the design of the experiment.

  3. Speciation of americium in seawater and accumulation in the marine sponge Aplysina cavernicola. (United States)

    Maloubier, Melody; Michel, Hervé; Solari, Pier Lorenzo; Moisy, Philippe; Tribalat, Marie-Aude; Oberhaensli, François R; Dechraoui Bottein, Marie Yasmine; Thomas, Olivier P; Monfort, Marguerite; Moulin, Christophe; Den Auwer, Christophe


    The fate of radionuclides in the environment is a cause of great concern for modern society, seen especially in 2011 after the Fukushima accident. Among the environmental compartments, seawater covers most of the earth's surface and may be directly or indirectly impacted. The interaction between radionuclides and the marine compartment is therefore essential for better understanding the transfer mechanisms from the hydrosphere to the biosphere. This information allows for the evaluation of the impact on humans via our interaction with the biotope that has been largely undocumented up to now. In this report, we attempt to make a link between the speciation of heavy elements in natural seawater and their uptake by a model marine organism. More specifically, because the interaction of actinides with marine invertebrates has been poorly studied, the accumulation in a representative member of the Mediterranean coralligenous habitat, the sponge Aplysina cavernicola, was investigated and its uptake curve exposed to a radiotracer (241)Am was estimated using a high-purity Ge gamma spectrometer. But in order to go beyond the phenomenological accumulation rate, the speciation of americium(III) in seawater must be assessed. The speciation of (241)Am (and natural europium as its chemically stable surrogate) in seawater was determined using a combination of different techniques: Time-Resolved Laser-Induced Fluorescence (TRLIF), Extended X-ray Absorption Fine Structure (EXAFS) at the LIII edge, Attenuated Total Reflectance Fourier Transform Infrared (ATR-FTIR) spectroscopy and Scanning Electron Microscopy (SEM) and the resulting data were compared with the speciation modeling. In seawater, the americium(III) complex (as well as the corresponding europium complex, although with conformational differences) was identified as a ternary sodium biscarbonato complex, whose formula can be tentatively written as NaAm(CO3)2·nH2O. It is therefore this chemical form of americium that is

  4. Plutonium and americium in arctic waters, the North Sea and Scottish and Irish coastal zones

    DEFF Research Database (Denmark)

    Hallstadius, L.; Aarkrog, Asker; Dahlgaard, Henning;


    collected from the Irish coast in 1983. Fallout is found to dominate as a source of 239+240Pu north of latitude 65°N, while for 238Pu a substantial fraction originates from European nuclear fuel reprocessing facilities. The 238Pu/239+240Pu isotope ratio provides clear evidence of the transport of effluent...... of the Irish Sea) to Spitsbergen. 241Am found in Arctic waters probably originates from the decay of fallout 241Pu and, like Pu, tentatively has a residence time of the order of several years. Americium from Sellafield has an estimated mean residence time of 4–6 months in Scottish waters....

  5. Penetration and decontamination of americium-241 ex vivo using fresh and frozen pig skin. (United States)

    Tazrart, A; Bolzinger, M A; Moureau, A; Molina, T; Coudert, S; Angulo, J F; Briancon, S; Griffiths, N M


    Skin contamination is one of the most probable risks following major nuclear or radiological incidents. However, accidents involving skin contamination with radionuclides may occur in the nuclear industry, in research laboratories and in nuclear medicine departments. This work aims to measure the penetration of the radiological contaminant Americium ((241)Am) in fresh and frozen skin and to evaluate the distribution of the contamination in the skin. Decontamination tests were performed using water, Fuller's earth and diethylene triamine pentaacetic acid (DTPA), which is the recommended treatment in case of skin contamination with actinides such as plutonium or americium. To assess these parameters, we used the Franz cell diffusion system with full-thickness skin obtained from pigs' ears, representative of human skin. Solutions of (241)Am were deposited on the skin samples. The radioactivity content in each compartment and skin layers was measured after 24 h by liquid scintillation counting and alpha spectrophotometry. The Am cutaneous penetration to the receiver compartment is almost negligible in fresh and frozen skin. Multiple washings with water and DTPA recovered about 90% of the initial activity. The rest remains fixed mainly in the stratum corneum. Traces of activity were detected within the epidermis and dermis which is fixed and not accessible to the decontamination.

  6. Magnesium ionophore II as an extraction agent for trivalent europium and americium

    Energy Technology Data Exchange (ETDEWEB)

    Makrlik, Emanuel [Czech Univ. of Life Sciences, Prague (Czech Republic). Faculty of Environmental Sciences; Vanura, Petr [Univ. of Chemistry and Technology, Prague (Czech Republic). Dept. of Analytical Chemistry


    Solvent extraction of microamounts of trivalent europium and americium into nitrobenzene by using a mixture of hydrogen dicarbollylcobaltate (H{sup +}B{sup -}) and magnesium ionophore II (L) was studied. The equilibrium data were explained assuming that the species HL{sup +}, HL{sup +}{sub 2}, ML{sup 3+}{sub 2}, and ML{sup 3+}{sub 3} (M{sup 3+} = Eu{sup 3+}, Am{sup 3+}; L=magnesium, ionophore II) are extracted into the nitrobenzene phase. Extraction and stability constants of the cationic complex species in nitrobenzene saturated with water were determined and discussed. From the experimental results it is evident that this effective magnesium ionophore II receptor for the Eu{sup 3+} and Am{sup 3+} cations could be considered as a potential extraction agent for nuclear waste treatment.

  7. Imitators of plutonium and americium in a mixed uranium- plutonium nitride fuel (United States)

    Nikitin, S. N.; Shornikov, D. P.; Tarasov, B. A.; Baranov, V. G.; Burlakova, M. A.


    Uranium nitride and mix uranium nitride (U-Pu)N is most popular nuclear fuel for Russian Fast Breeder Reactor. The works in hot cells associated with the radiation exposure of personnel and methodological difficulties. To know the main physical-chemical properties of uranium-plutonium nitride it necessary research to hot cells. In this paper, based on an assessment of physicochemical and thermodynamic properties of selected simulators Pu and Am. Analogues of Pu is are Ce and Y, and analogues Am - Dy. The technique of obtaining a model nitride fuel based on lanthanides nitrides and UN. Hydrogenation-dehydrogenation- nitration method of derived powders nitrides uranium, cerium, yttrium and dysprosium, held their mixing, pressing and sintering, the samples obtained model nitride fuel with plutonium and americium imitation. According to the results of structural studies have shown that all the samples are solid solution nitrides rare earth (REE) elements in UN.

  8. The Role of Colloids in the Transport of Plutonium and Americium: Implications for

    Energy Technology Data Exchange (ETDEWEB)

    Kersting, A B


    Colloids are small particulates (ranging in size from 1 to 0.001 micron) composed of inorganic and organic material and found in all natural water. Due to their small size, they have the ability to remain suspended in water and transported. Small amounts of plutonium (Pu) and americium (Am) can adsorb (attach) to colloids, and/or form colloidal-sized polymers and migrate in water. At Rocky Flats Environmental Technology Site (RFETS) sedimentation and resuspension of particulates and colloids in surface waters represent the dominant process for Pu and Am migration. The amount of Pu and Am that can be transported at RFETS has been quantified in the Pathway Analysis Report. The Pathway Analysis Report shows that the two dominant pathways for Pu and Am transport at RFETS are air and surface water. Shallow groundwater and biological pathways are minor.

  9. Standard practice for The separation of americium from plutonium by ion exchange

    CERN Document Server

    American Society for Testing and Materials. Philadelphia


    1.1 This practice describes the use of an ion exchange technique to separate plutonium from solutions containing low concentrations of americium prior to measurement of the 241Am by gamma counting. 1.2 This practice covers the removal of plutonium, but not all the other radioactive isotopes that may interfere in the determination of 241Am. 1.3 This practice can be used when 241Am is to be determined in samples in which the plutonium is in the form of metal, oxide, or other solid provided that the solid is appropriately sampled and dissolved (See Test Methods C758, C759, and C1168). 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

  10. Determination of the Peltier coefficient for gallium arsenide in a vertical Bridgman furnace (United States)

    Wiegel, Michaela E. K.; Matthiesen, David H.


    The Peltier coefficient for gallium arsenide solid in contact with its melt was experimentally determined. Selenium doped gallium arsenide samples were hermetically sealed in a fused quartz ampoule and processed in a vertical Bridgman furnace. During the translation period seven sequences of current-on and current-off periods were processed into the solidifying crystal. An axial slice was mechanochemically polished and then etched. Photomicrographs of the slice were taken with differential interference contrast microscopy and were used to measure the thickness of the current-on and current-off layers. These results were used to calculate growth rates from which the Peltier coefficient was calculated. An average value of 0.107±0.015 V was determined. The values calculated from the different sequences were in excellent agreement with each other even though the sequences had different current densities, current-on durations, and current-on to current-off ratios.

  11. An advanced space photovoltaic concentrator array using Fresnel lenses, gallium arsenide cells, and prismatic cell covers (United States)

    O'Neill, Mark J.; Piszczor, Michael F.


    The current status of a space concentrator array which uses refractive optics, gallium arsenide cells, and prismatic cell covers to achieve excellent performance at a very low array mass is documented. The prismatically covered cells have established records for space cell performance (24.2 percent efficient at 100 AM0 suns and 25 C) and terrestrial single-junction cell performance (29.3 percent efficient at 200 AM1.5 suns and 25 C).

  12. Probing the electronic properties of p-doped gallium arsenide nanowires



    Probing the electronic properties of nm-scaled object is a challenge but is required for doping optimalization and using the nm-scaled objects as building blocks in future devices. In the present study, electron beam induced deposition of platinum was used for contacting and creating two-point probes to beryllium-doped gallium arsenide nanowires. Thereby, a metal-semiconductor-metal structure with rectifying metal-semiconductor contact characteristic is formed (i.e. back-to-back Schottky diod...

  13. Two years of on-orbit gallium arsenide performance from the LIPS solar cell panel experiment (United States)

    Francis, R. W.; Betz, F. E.


    The LIPS on-orbit performance of the gallium arsenide panel experiment was analyzed from flight operation telemetry data. Algorithms were developed to calculate the daily maximum power and associated solar array parameters by two independent methods. The first technique utilizes a least mean square polynomial fit to the power curve obtained with intensity and temperature corrected currents and voltages; whereas, the second incorporates an empirical expression for fill factor based on an open circuit voltage and the calculated series resistance. Maximum power, fill factor, open circuit voltage, short circuit current and series resistance of the solar cell array are examined as a function of flight time. Trends are analyzed with respect to possible mechanisms which may affect successive periods of output power during 2 years of flight operation. Degradation factors responsible for the on-orbit performance characteristics of gallium arsenide are discussed in relation to the calculated solar cell parameters. Performance trends and the potential degradation mechanisms are correlated with existing laboratory and flight data on both gallium arsenide and silicon solar cells for similar environments.

  14. Separation of oxidized americium from lanthanides by use of pillared metal(IV) phosphate-phosphonate hybrid materials

    Energy Technology Data Exchange (ETDEWEB)

    Burns, J.D.; Clearfield, A. [Texas A and M Univ., College Station, TX (United States). Dept. of Chemistry; Borkowski, M.; Reed, D.T. [Los Alamos National Laboratory, Carlsbad, NM (United States). Earth and Environmental Sciences Div.


    Closing the nuclear fuel cycle in the US poses many challenges, one of which is found in the waste streams, which contain both trivalent lanthanides and actinides. The separation of americium from the raffinate will dramatically reduce the long-term radiotoxicity of the waste. The sorption of americium in both the tri- and pentavalent oxidation states was observed for four M(IV) phosphate-phosphonate ion exchange materials in nitric acid at pH 2. High selectivity was observed for reduced Am(III) with K{sub d} values ca. 6 x 10{sup 5} mL/g, while the K{sub d} values for Am(V) were much lower. A new method of synthesizing and stabilizing AmO{sub 2}{sup +} to yield a lifetime of at least 24 h in acidic media using a combination of sodium persulfate and calcium hypochlorite will be described.

  15. Theoretical investigation of pressure-induced structural transitions in americium using GGA+U and hybrid density functional theory methods

    DEFF Research Database (Denmark)

    Verma, Ashok K.; Modak, P.; Sharma, Surinder M.;


    First-principles calculations have been performed for americium (Am) metal using the generalized gradient approximation + orbital-dependent onsite Coulomb repulsion via Hubbard interaction (GGA+U) and hybrid density functional theory (HYB-DFT) methods to investigate various ground state properties...... spectrum at ambient pressure relate, for some parameter choices, well to peak positions in the calculated density of states function of Am-I....

  16. Vertical and horizontal fluxes of plutonium and americium in the western Mediterranean and the Strait of Gibraltar. (United States)

    León Vintró, L; Mitchell, P I; Condren, O M; Downes, A B; Papucci, C; Delfanti, R


    New data on the vertical distributions of plutonium and americium in the waters of the western Mediterranean and the Strait of Gibraltar are examined in terms of the processes governing their delivery to, transport in and removal from the water column within the basin. Residence times for plutonium and americium in surface waters of approximately 15 and approximately 3 years, respectively, are deduced, and it is shown that by the mid 1990s only approximately 35% of the 239,240Pu and approximately 5% of the 241Am deposited as weapons fallout still resided in the water column. Present 239,240Pu inventories in the water column and the underlying sediments are estimated to be approximately 25 TBq and approximately 40 TBq, respectively, which reconcile well with the time-integrated fallout deposition in this zone, taken to be approximately 69 TBq. The data show that there are significant net outward fluxes of plutonium and americium from the basin through the Strait of Gibraltar at the present time. These appear to be compensated by net inward fluxes of similar magnitude through the Strait of Sicily. Thus, the time-integrated fallout deposition in the western basin can be accounted for satisfactorily in terms of present water column and sediment inventories. Enhanced scavenging on the continental shelves, as evidenced by the appreciably higher transuranic concentrations in shelf sediments, supports this contention.

  17. The behaviour under irradiation of molybdenum matrix for inert matrix fuel containing americium oxide (CerMet concept) (United States)

    D'Agata, E.; Knol, S.; Fedorov, A. V.; Fernandez, A.; Somers, J.; Klaassen, F.


    Americium is a strong contributor to the long term radiotoxicity of high activity nuclear waste. Transmutation by irradiation in nuclear reactors or Accelerator Driven System (ADS, subcritical reactors dedicated to transmutation) of long-lived nuclides like 241Am is therefore an option for the reduction of radiotoxicity of waste packages to be stored in a repository. In order to safely burn americium in a fast reactor or ADS, it must be incorporated in a matrix that could be metallic (CerMet target) or ceramic (CerCer target). One of the most promising matrix to incorporate Am is molybdenum. In order to address the issues (swelling, stability under irradiation, gas retention and release) of using Mo as matrix to transmute Am, two irradiation experiments have been conducted recently at the High Flux Reactor (HFR) in Petten (The Netherland) namely HELIOS and BODEX. The BODEX experiment is a separate effect test, where the molybdenum behaviour is studied without the presence of fission products using 10B to "produce" helium, the HELIOS experiment included a more representative fuel target with the presence of Am and fission product. This paper covers the results of Post Irradiation Examination (PIE) of the two irradiation experiments mentioned above where molybdenum behaviour has been deeply investigated as possible matrix to transmute americium (CerMet fuel target). The behaviour of molybdenum looks satisfying at operating temperature but at high temperature (above 1000 °C) more investigation should be performed.

  18. HELIOS: the new design of the irradiation of U-free fuels for americium transmutation

    Energy Technology Data Exchange (ETDEWEB)

    D' Agata, E. [European Commission, Joint Research Centre, Institute for Energy, P.O. Box 2, 1755 ZG Petten (Netherlands); Klaassen, F.; Sciolla, C. [Nuclear Research and Consultancy Group, Dept. Life Cycle and Innovations, P.O. Box 25 1755 ZG Petten (Netherlands); Fernandez-Carretero, A. [European Commission, Joint Research Centre, Institute for Transuranium Elements, P.O. Box 2340, 76125 Karlsruhe (Germany); Bonnerot, J.M. [Commissariat a l' Energie Atomique, DEC/SESC/LC2I CEA-Cadarache, 13108 St. Paul lez Durance Cedex (France)


    Americium is one of the radioactive elements that mostly contribute to the radiotoxicity of the nuclear spent fuel. Transmutation of long-lived nuclides like Americium is an option for the reduction of the mass, the radiotoxicity and the decay heat of nuclear waste. The HELIOS irradiation experiment is the last evolution in a series of experiments on americium transmutation. The previous experiments, EFTTRA-T4 and T4bis, have shown that the release or trapping of helium is the key issue for the design of such kind of target. In fact, the production of helium, which is characteristic of {sup 241}Am transmutation, is quite significant. The experiment is carried out in the framework of the 4-year project EUROTRANS of the EURATOM 6. Framework Programme (FP6). Therefore, the main objective of the HELIOS experiment is to study the in-pile behaviour of U-free fuels such as CerCer (Pu, Am, Zr)O{sub 2} and Am{sub 2}Zr{sub 2}O{sub 7}+MgO or CerMet (Pu, Am)O{sub 2}+Mo in order to gain knowledge on the role of the fuel microstructure and of the temperature on the gas release and on the fuel swelling. The experiment was planned to be conducted in the HFR (High Flux Reactor) in Petten (The Netherlands) starting the first quarter of 2007. Because of the innovative aspects of the fuel, the fabrication has had some delays as well as the final safety analyses of the original design showed some unexpected deviation. Besides, the HFR reactor has been unavailable since August 2008. Due to the reasons described above, the experiment has been postponed. HELIOS should start in the first quarter of 2009 and will last 300 full power days. The paper will cover the description of the new design of the irradiation experiment HELIOS. The experiment has been split in two parts (HELIOS1 and HELIOS2) which will be irradiated together. Moreover, due to the high temperature achieved in cladding and to the high amount of helium produced during transmutation the experiment previously designed for a

  19. Electronic properties and chemical bonding in quaternary arsenide oxides LaZnAsO and YZnAsO

    Energy Technology Data Exchange (ETDEWEB)

    Bannikov, V.V.; Shein, I.R. [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, Pervomaiskaya, 91, 620041, Ekaterinburg (Russian Federation); Ivanovskii, A.L., E-mail: [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, Pervomaiskaya, 91, 620041, Ekaterinburg (Russian Federation)


    First principles FLAPW-GGA band structure calculations are employed to obtain the structural, electronic properties and chemical bonding picture for two related phases, namely, quaternary arsenide oxides LaZnAsO and YZnAsO. These compounds are found to be direct-transition type semiconductors with the GGA gaps of about 0.65-1.30 eV. The peculiarities of chemical bonding in these phases are investigated and discussed in comparison with quaternary arsenide oxide LaFeAsO-a basic phase for the newly discovered 26-55 K superconductors.

  20. Americium and plutonium in water, biota, and sediment from the central Oregon coast

    Energy Technology Data Exchange (ETDEWEB)

    Nielsen, R. D.


    Plutonium-239, 240 and americium-241 were measured in the mussel Mytilus californianus from the region of Coos Bay, OR. The flesh of this species has a plutonium concentration of about 90 fCi/kg, and an Am-241/Pu-239, 240 ratio that is high relative to mixed fallout, ranging between two and three. Transuranic concentrations in sediment, unfiltered water, and filterable particulates were also measured; none of these materials has an Am/Pu ratio as greatly elevated as the mussels, and there is no apparent difference in the Am/Pu ratio of terrestrial runoff and coastal water. Sediment core profiles do not allow accumulation rates or depositional histories to be identified, but it does not appear that material characterized by a high Am/Pu ratio has ever been introduced to this estuary. Other bivalves (Tresus capax and Macoma nasuta) and a polychaete (Abarenicola sp.) do not have an elevated Am/Pu ratio, although the absolute activity of plutonium in the infaunal bivalves is roughly four times that in the mussels.

  1. Development and Testing of an Americium/Lanthanide Separation Flowsheet Using Sodium Bismuthate

    Energy Technology Data Exchange (ETDEWEB)

    Jack Law; Bruce Mincher; Troy Garn; Mitchell Greenhalgh; Nicholas Schmitt; Veronica Rutledge


    The separation of Am from the lanthanides and curium is a key step in proposed advanced fuel cycle scenarios. The partitioning and transmutation of Am is desirable to minimize the long-term heat load of material interred in a future high-level waste repository. A separation process amenable to process scale-up remains elusive. Given only subtle chemistry differences within and between the ions of the trivalent actinide and lanthanide series this separation is challenging ; however, higher oxidation states of americium can be prepared using sodium bismuthate and separated via solvent extraction using diamylamylphosphonate (DAAP) extraction. Among the other trivalent metals only Ce is also oxidized and extracted. Due to the long-term instability of Am(VI) , the loaded organic phase is readily selectively stripped to partition the actinide to a new acidic aqueous phase. Batch extraction distribution ratio measurements were used to design a flowsheet to accomplish this separation. Additionally, crossflow filtration was investigated as a method to filter the bismuthate solids from the feed solution prior to extraction. Results of the filtration studies, flowsheet development work and flowsheet performance testing using a centrifugal contactor are detailed.

  2. Americium-based oxides: Dense pellet fabrication from co-converted oxalates

    Energy Technology Data Exchange (ETDEWEB)

    Horlait, Denis; Lebreton, Florent [CEA, DEN, DTEC/SDTC/LEMA, 30207 Bagnols-sur-Cèze (France); Gauthé, Aurélie [CEA, DEN, DRCP/SERA/LCAR, 30207 Bagnols-sur-Cèze (France); Caisso, Marie [CEA, DEN, DTEC/SDTC/LEMA, 30207 Bagnols-sur-Cèze (France); Arab-Chapelet, Bénédicte; Picart, Sébastien [CEA, DEN, DRCP/SERA/LCAR, 30207 Bagnols-sur-Cèze (France); Delahaye, Thibaud, E-mail: [CEA, DEN, DTEC/SDTC/LEMA, 30207 Bagnols-sur-Cèze (France)


    Mixed oxides are used as nuclear fuels and are notably envisaged for future fuel cycles including plutonium and minor actinide recycling. In this context, processes are being developed for the fabrication of uranium–americium mixed-oxide compounds for transmutation. The purpose of these processes is not only the compliance with fuel specifications in terms of density and homogeneity, but also the simplification of the process for its industrialization as well as lowering dust generation. In this paper, the use of a U{sub 0.85}Am{sub 0.15}O{sub 2±δ} powder synthesized by oxalate co-conversion as a precursor for dense fuel fabrications is assessed. This study notably focuses on sintering, which yielded pellets up to 96% of the theoretical density, taking advantage of the high reactivity and homogeneity of the powder. As-obtained pellets were further characterized to be compared to those obtained via processes based on the UMACS (Uranium Minor Actinide Conventional Sintering) process. This comparison highlights several advantages of co-converted powder as a precursor for simplified processes that generate little dust.

  3. Experimental studies on the biokinetics of plutonium and americium in the cephalopod Octopus vulgaris

    Energy Technology Data Exchange (ETDEWEB)

    Guary, J.C.; Fowler, S.W.


    Radiotracer experiments using the photon-emitters /sup 237/Pu and /sup 241/Am were performed to examine uptake, tissue distribution and retention of plutonium and americium in the cephalopod Octopus vulgaris Cuvier. A 2 wk exposure in contaminated sea water resulted in twice as much /sup 237/Pu being taken up by whole octopus as /sup 241/Am. Immediately following uptake approximately 41% and 73% of the /sup 237/Pu and /sup 241/Am respectively were located in the branchial hearts. Depuration rates for both radionuclides were identical; approximately 46% of both radionuclides initially incorporated were associated with a long-lived compartment which turned over very slowly (Tbsub(1/2) = 1.5 yr). Longer exposures to /sup 241/Am resulted in an increase in the size of the slowly exchanging /sup 241/Am pool in the octopus. After 2 mo depuration, the majority of the residual activity of both radionuclides was in the branchial hearts. On average 33% of the /sup 241/Am ingested with food was assimilated into tissues, primarily the hepatopancreas. Different whole-body /sup 241/Am excretion rates were observed at different times following assimilation and were related to transfer processes taking place within internal tissues, most notably between hepatopancreas and the branchial hearts. Relationships between circulatory and excretory functions of these 2 organs are discussed and a physiological mechanism is proposed to explain the observed patterns of /sup 241/Am excretion in O. vulgaris.

  4. In Vitro Dissolution Tests of Plutonium and Americium Containing Contamination Originating From ZPPR Fuel Plates

    Energy Technology Data Exchange (ETDEWEB)

    William F. Bauer; Brian K. Schuetz; Gary M. Huestis; Thomas B. Lints; Brian K. Harris; R. Duane Ball; Gracy Elias


    Assessing the extent of internal dose is of concern whenever workers are exposed to airborne radionuclides or other contaminants. Internal dose determinations depend upon a reasonable estimate of the expected biological half-life of the contaminants in the respiratory tract. One issue with refractory elements is determining the dissolution rate of the element. Actinides such as plutonium (Pu) and Americium (Am) tend to be very refractory and can have biological half-lives of tens of years. In the event of an exposure, the dissolution rates of the radionuclides of interest needs to be assessed in order to assign the proper internal dose estimates. During the November 2011 incident at the Idaho National Laboratory (INL) involving a ZPPR fuel plate, air filters in a constant air monitor (CAM) and a giraffe filter apparatus captured airborne particulate matter. These filters were used in dissolution rate experiments to determine the apparent dissolution half-life of Pu and Am in simulated biological fluids. This report describes these experiments and the results. The dissolution rates were found to follow a three term exponential decay equation. Differences were noted depending upon the nature of the biological fluid simulant. Overall, greater than 95% of the Pu and 93% of the Am were in a very slow dissolving component with dissolution half-lives of over 10 years.

  5. Plutonium and americium monazite materials: Solid state synthesis and X-ray diffraction study

    Energy Technology Data Exchange (ETDEWEB)

    Bregiroux, D. [DEN/DEC/SPUA, Commissariat a l' Energie Atomique, Cadarache, 13108 Saint Paul Lez Durance (France); Laboratoire Science des Procedes Ceramiques et de Traitements de Surface, UMR CNRS-Universite no. 6638, Batiment Chimie, 123 avenue Albert Thomas, 87060 Limoges (France); E-mail:; Belin, R. [DEN/DEC/SPUA, Commissariat a l' Energie Atomique, Cadarache, 13108 Saint Paul Lez Durance (France); Valenza, P. [DEN/DEC/SPUA, Commissariat a l' Energie Atomique, Cadarache, 13108 Saint Paul Lez Durance (France); Audubert, F. [DEN/DEC/SPUA, Commissariat a l' Energie Atomique, Cadarache, 13108 Saint Paul Lez Durance (France); Bernache-Assollant, D. [Ecole Nationale Superieure des Mines, 158 Cours Fauriel, 42023 Saint Etienne (France)


    High-temperature solid state syntheses of monazite powders containing plutonium (III), plutonium (IV) and americium (III) were performed. Resulting powders were characterized by X-ray diffraction. Pu{sup 3+}PO{sub 4} was readily obtained as a single phase by heating a Pu{sup 4+}O{sub 2}-NH{sub 4}H{sub 2}PO{sub 4} mixture under argon atmosphere. Traces of tetravalent plutonium phosphate Pu{sup 4+}P{sub 2}O{sub 7} were detected when synthesized under air atmosphere. The incorporation of (Pu{sup 4+},Ca{sup 2+}) in the monazite structure was investigated under air and argon atmosphere. We showed that Pu{sup 4+} is fully reduced in Pu{sup 3+} under argon atmosphere whereas, under air, the compound with the formula Pu{sub 0.4}{sup 3+}Pu{sub 0.3}{sup 4+}Ca{sub 0.3}{sup 2+}PO{sub 4} was obtained. Pure Am{sup 3+}PO{sub 4} was also synthesized under argon atmosphere. X-ray patterns revealed a complete amorphisation of the monazite structure at a relatively low cumulative alpha dose for {sup 241}AmPO{sub 4}.

  6. Mutual separation of americium(III) and europium(III) using glycolamic acid and thioglycolamic acid

    Energy Technology Data Exchange (ETDEWEB)

    Suneesh, A.S.; Venkatesan, K.A.; Syamala, K.V.; Antony, M.P.; Vasudeva Rao, P.R. [Indira Gandhi Centre for Atomic Research, Kalpakkam (India). Fuel Chemistry Div.


    The extractants, bis(2-ethylhexyl)diglycolamicacid (HDEHDGA) and bis(2-ethylhexy)thiodiglycolamic acid (HDEHSDGA) were synthesized and characterized by {sup 1}H and {sup 13}C NMR, mass and IR spectroscopy. The extraction behaviour of {sup (152+154})Eu(III) and {sup 241}Am(III) from nitric acid medium by a solution of HDEHDGA (or HDEHSDGA) in n-dodecane (n-DD) was studied for the mutual separation of actinides and lanthanides. The effect of various parameters such as the pH, concentrations of HDEHDGA, HDEHSDGA, sodium nitrate, N,N,N',N'-tetrakis(2-pyridylmethyl)ethylenediamine (TPEN) and diethylenetriaminepentaacetic acid (DTPA) on the separation factor (SF) of americium(III) over europium(III) and vice versa was studied, and the conditions needed for the preferential separation were optimised. The results show that HDEHDGA exhibits higher extraction for {sup (152+154)}Eu(III) and HDEHSDGA shows the superior selectivity for {sup 241}Am(III). (orig.)

  7. Solution speciation of plutonium and Americium at an Australian legacy radioactive waste disposal site. (United States)

    Ikeda-Ohno, Atsushi; Harrison, Jennifer J; Thiruvoth, Sangeeth; Wilsher, Kerry; Wong, Henri K Y; Johansen, Mathew P; Waite, T David; Payne, Timothy E


    During the 1960s, radioactive waste containing small amounts of plutonium (Pu) and americium (Am) was disposed in shallow trenches at the Little Forest Burial Ground (LFBG), located near the southern suburbs of Sydney, Australia. Because of periodic saturation and overflowing of the former disposal trenches, Pu and Am have been transferred from the buried wastes into the surrounding surface soils. The presence of readily detected amounts of Pu and Am in the trench waters provides a unique opportunity to study their aqueous speciation under environmentally relevant conditions. This study aims to comprehensively investigate the chemical speciation of Pu and Am in the trench water by combining fluoride coprecipitation, solvent extraction, particle size fractionation, and thermochemical modeling. The predominant oxidation states of dissolved Pu and Am species were found to be Pu(IV) and Am(III), and large proportions of both actinides (Pu, 97.7%; Am, 86.8%) were associated with mobile colloids in the submicron size range. On the basis of this information, possible management options are assessed.

  8. High Pressure X-ray Diffraction Study on Icosahedral Boron Arsenide (B12As2)

    Energy Technology Data Exchange (ETDEWEB)

    J Wu; H Zhu; D Hou; C Ji; C Whiteley; J Edgar; Y Ma


    The high pressure properties of icosahedral boron arsenide (B12As2) were studied by in situ X-ray diffraction measurements at pressures up to 25.5 GPa at room temperature. B12As2 retains its rhombohedral structure; no phase transition was observed in the pressure range. The bulk modulus was determined to be 216 GPa with the pressure derivative 2.2. Anisotropy was observed in the compressibility of B12As2-c-axis was 16.2% more compressible than a-axis. The boron icosahedron plays a dominant role in the compressibility of boron-rich compounds.

  9. Development of gallium arsenide high-speed, low-power serial parallel interface modules: Executive summary (United States)


    Final report to NASA LeRC on the development of gallium arsenide (GaAS) high-speed, low power serial/parallel interface modules. The report discusses the development and test of a family of 16, 32 and 64 bit parallel to serial and serial to parallel integrated circuits using a self aligned gate MESFET technology developed at the Honeywell Sensors and Signal Processing Laboratory. Lab testing demonstrated 1.3 GHz clock rates at a power of 300 mW. This work was accomplished under contract number NAS3-24676.

  10. Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Ramon M. delos Santos


    Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

  11. Indium arsenide nanowire field-effect transistors for pH and biological sensing

    Energy Technology Data Exchange (ETDEWEB)

    Upadhyay, S.; Krogstrup, P.; Nygård, J., E-mail: [Center for Quantum Devices and Nanoscience Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark); Frederiksen, R.; Lloret, N.; Martinez, K. L. [Bio-Nanotechnology and Nanomedicine Laboratory, Department of Chemistry and Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark); De Vico, L.; Jensen, J. H. [Department of Chemistry, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)


    Indium Arsenide is a high mobility semiconductor with a surface electron accumulation layer that allows ohmic electrical contact to metals. Here, we present nanowire devices based on this material as a platform for chemical and biological sensing. The sensing principle involves the binding of a charged species at the sensor surface transduced via field effect into a change in current flowing through the sensor. We show the sensitivity of the platform to the H{sup +} ion concentration in solution as proof of principle and demonstrate the sensitivity to larger charged protein species. The sensors are highly reproducible and reach a detection limit of 10 pM for Avidin.

  12. Functional renormalization group study of an 8-band model for the iron arsenides (United States)

    Honerkamp, Carsten; Lichtenstein, Julian; Maier, Stefan A.; Platt, Christian; Thomale, Ronny; Andersen, Ole Krogh; Boeri, Lilia


    We investigate the superconducting pairing instabilities of eight-band models for 1111 iron arsenides. Using a functional renormalization group treatment, we determine how the critical energy scale for superconductivity depends on the electronic band structure. Most importantly, if we vary the parameters from values corresponding to LaFeAsO to SmFeAsO, the pairing scale is strongly enhanced, in accordance with the experimental observation. We analyze the reasons for this trend and compare the results of the eight-band approach to those found using five-band models.

  13. Functional renormalization group study of an eight-band model for the iron arsenides (United States)

    Lichtenstein, J.; Maier, S. A.; Honerkamp, C.; Platt, C.; Thomale, R.; Andersen, O. K.; Boeri, L.


    We investigate the superconducting pairing instabilities of eight-band models for the iron arsenides. Using a functional renormalization group treatment, we determine how the critical energy scale for superconductivity depends on the electronic band structure. Most importantly, if we vary the parameters from values corresponding to LaFeAsO to SmFeAsO, the pairing scale is strongly enhanced, in accordance with the experimental observation. We analyze the reasons for this trend and compare the results of the eight-band approach to those found using five-band models.

  14. Analytical and experimental procedures for determining propagation characteristics of millimeter-wave gallium arsenide microstrip lines (United States)

    Romanofsky, Robert R.


    In this report, a thorough analytical procedure is developed for evaluating the frequency-dependent loss characteristics and effective permittivity of microstrip lines. The technique is based on the measured reflection coefficient of microstrip resonator pairs. Experimental data, including quality factor Q, effective relative permittivity, and fringing for 50-omega lines on gallium arsenide (GaAs) from 26.5 to 40.0 GHz are presented. The effects of an imperfect open circuit, coupling losses, and loading of the resonant frequency are considered. A cosine-tapered ridge-guide text fixture is described. It was found to be well suited to the device characterization.


    Directory of Open Access Journals (Sweden)

    Mustafa TEMİZ


    Full Text Available Multiple quantum-well (MQW electroabsorptive self electro optic-effect devices (SEEDs are being extensively studied for use in optical switching and computing. The self electro-optic-effect devices which has quantum-well structures is a new optoelectronic technology with capability to obtain both optical inputs and outputs for Gallium-Arsenide/Aluminum Gallium-Arsenide (GaAs/AlGaAs electronic circuits. The optical inputs and outputs are based on quantum-well absorptive properties. These quantum-well structures consist of many thin layers of semiconductors materials of GaAs/AlGaAs which have emerged some important directions recently. The most important advance in the physics of these materials since the early days has been invention of the heterojunction structures which is based at present on GaAs technology. GaAs/AlGaAs structures present some important advantages to relevant band gap and index of refraction which allow to form the quantum-well structures and also to make semiconductor lasers, dedectors and waveguide optical switches.

  16. Structural and electrooptical characteristics of quantum dots emitting at 1.3 μm on gallium arsenide

    DEFF Research Database (Denmark)

    Fiore, A.; Oesterle, U.; Stanley, R.P.;


    We present a comprehensive study of the structural and emission properties of self-assembled InAs quantum dots emitting at 1.3 mum. The dots are grown by molecular beam epitaxy on gallium arsenide substrates. Room-temperature emission at 1.3 mum is obtained by embedding the dots in an InGaAs layer...

  17. Americium/Lanthanide Separations in Alkaline Solutions for Advanced Nuclear Fuel Cycles

    Energy Technology Data Exchange (ETDEWEB)

    Goff, George S. [Los Alamos National Laboratory; Long, Kristy Marie [Los Alamos National Laboratory; Reilly, Sean D. [Los Alamos National Laboratory; Jarvinen, Gordon D. [Los Alamos National Laboratory; Runde, Wolfgang H. [Los Alamos National Laboratory


    Project goals: Can used nuclear fuel be partitioned by dissolution in alkaline aqueous solution to give a solution of uranium, neptunium, plutonium, americium and curium and a filterable solid containing nearly all of the lanthanide fission products and certain other fission products? What is the chemistry of Am/Cm/Ln in oxidative carbonate solutions? Can higher oxidation states of Am be stabilized and exploited? Conclusions: Am(VI) is kinetically stable in 0.5-2.0 M carbonate solutions for hours. Aliquat 336 in toluene has been successfully shown to extract U(VI) and Pu(VI) from carbonate solutions. (Stepanov et al 2011). Higher carbonate concentration gives lower D, SF{sub U/Eu} for = 4 in 1 M K{sub 2}CO{sub 3}. Experiments with Am(VI) were unsuccessful due to reduction by the organics. Multiple sources of reducing organics...more optimization. Reduction experiments of Am(VI) in dodecane/octanol/Aliquat 336 show that after 5 minutes of contact, only 30-40% of the Am(VI) has been reduced. Long enough to perform an extraction. Shorter contact times, lower T, and lower Aliquat 336 concentration still did not result in any significant extraction of Am. Anion exchange experiments using a strong base anion exchanger show uptake of U(VI) with minimal uptake of Nd(III). Experiments with Am(VI) indicate Am sorption with a Kd of 9 (10 minute contact) but sorption mechanism is not yet understood. SF{sub U/Nd} for = 7 and SF{sub U/Eu} for = 19 after 24 hours in 1 M K{sub 2}CO{sub 3}.

  18. Concentrations of plutonium and americium in plankton from the western Mediterranean Sea

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Cabeza, Joan-Albert; Merino, Juan; Masque, Pere [Insitut de Ciencia i Tecnologia Ambiental-Departament de Fisica, Universitat Autonoma de Barcelona, 08193 Bellaterra, Barcelona (Spain); Mitchell, Peter I.; Vintro, L. Leon [Department of Experimental Physics, University College Dublin, Dublin 4 (Ireland); Schell, William R. [Graduate School of Public Health, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Cross, Lluisa; Calbet, Albert [Institut de Ciencies del Mar, Pg. Maritim Barceloneta, 37-49 08003, Barcelona (Spain)


    Understanding the transfer of radionuclides through the food chain leading to man and in particular, the uptake of transuranic nuclides by plankton, is basic to assess the potential radiological risk of the consumption of marine products by man. The main sources of transuranic elements in the Mediterranean Sea in the past were global fallout and the Palomares accident, although at present smaller amounts are released from nuclear establishments in the northwestern region. Plankton from the western Mediterranean Sea was collected and analyzed for plutonium and americium in order to study their biological uptake. The microplankton fractions accounted for approximately 50% of the total plutonium contents in particulate form. At Garrucha (Palomares area), microplankton showed much higher {sup 239,240}Pu activity, indicating the contamination with plutonium from the bottom sediments. Concentration factors were within the range of the values recommended by the International Atomic Energy Agency. Continental shelf mesoplankton was observed to efficiently concentrate transuranics. In open seawaters, concentrations were much lower. We speculate that sediments might play a role in the transfer of transuranics to mesoplankton in coastal waters, although we cannot discard that the difference in species composition may also play a role. In Palomares, both {sup 239,240}Pu and {sup 241}Am showed activities five times higher than the mean values observed in continental shelf mesoplankton. As the plutonium isotopic ratios in the contaminated sample were similar to those found in material related to the accident, the contamination was attributed to bomb debris from the Palomares accident. Concentration factors in mesoplankton were also in relatively good agreement with the ranges recommended by IAEA. In the Palomares station the highest concentration factor was observed in the sample that showed predominance of the dynoflagellate Ceratium spp. Mean values of the enrichment factors

  19. Straw man trade between multi-junction, gallium arsenide, and silicon solar cells (United States)

    Gaddy, Edward M.


    Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency

  20. Electronic structure, magnetic and superconducting properties of co-doped iron-arsenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Rosner, Helge; Schnelle, Walter; Nicklas, Michael; Leithe-Jasper, Andreas [MPI CPfS Dresden (Germany); Weikert, Franziska [Los Alamos National Laboratory, New Mexico (United States); HLD Dresden Rossendorf (Germany); Wosnitza, Joachim [HLD Dresden Rossendorf (Germany)


    We present a joint experimental and theoretical study of co-doped iron-arsenide superconductors of the 122 family A{sub 1-x}K{sub x}Fe{sub 2-y}T{sub y}As{sub 2} (A = Ba,Sr,Eu; T = Co,Ru,Rh). In these systems, the co-doping enables the separation of different parameters - like electron count, disorder or the specific geometry of the FeAs layer - with respect to the position of the respective compounds in the general 122 phase diagram. For a series of compounds, we investigate the relevance of the different parameters for the magnetic, thermodynamic and superconducting properties. Our experimental investigations are supported by density functional electronic structure calculations applying different approximations for doping and disorder.

  1. An effective electron mass in heavily doped gallium arsenide under ordering impurity complexes

    CERN Document Server

    Bogdanova, V A; Semikolenova, N A; Sidorov, E N


    The results of an investigation of edge photoluminescence spectra at 300 K for series of Czochralski grown tellurium doped gallium arsenide monocrystals with free carriers concentration n sub 0 = 10 sup 1 sup 7 -10 sup 1 sup 9 cm sup - sup 3 are presented. On the basis of photoluminescence spectra contour analysis the concentration dependences of chemical potential and value of band gap narrowing are obtained. The concentration dependence of electron effective mass m* sub 0 (n sub 0) at the bottom of the conduction band is calculated. It is shown, that the nonmonotonous dependence m* sub 0 (n sub 0) is an accordance with electron scattering data in the material under study and is conditioned by ordering of impurity complexes

  2. NMR studies on the new iron arsenide superconductors including the superconducting state

    Energy Technology Data Exchange (ETDEWEB)

    Grafe, Hans-Joachim; Lang, Guillaume; Hammerath, Franziska; Manthey, Katarina; Behr, Guenther; Werner, Jochen; Buechner, Bernd [IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Paar, Dalibor [IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Dept. of Physics, Faculty of Science, Univ. of Zagreb (Croatia); Curro, Nicholas [Dept. of Physics, Univ. of California, Davis, CA 95616 (United States)


    We summarize our Nuclear Magnetic Resonance (NMR) and Nuclear Quadrupole Resonance (NQR) results on the new iron arsenide superconductor LaO{sub 1-x}F{sub x}FeAs in the normal state, and show new NMR data in the superconducting state. Beyond early evidence of nodes and spin-singlet pairing[2], we find evidence of a deviation of the T{sup 3} behaviour of the spin lattice relaxation rate, 1/T{sub 1}, at temperatures significantly below T{sub c}, which would agree with the suggested extended s-wave symmetry. The deviation of the T{sup 3} behaviour is induced by the pair breaking effect of impurities. Different amounts of impurities would lead to different temperature dependences of 1/T{sub 1}, which would allow to differentiate between d-wave and extended s-wave symmetries.

  3. Ultrafast photocurrents and terahertz radiation in gallium arsenide and carbon based nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Prechtel, Hans Leonhard


    In this thesis we developed a measurement technique based on a common pump-probe scheme and coplanar stripline circuits that enables time-resolved photocurrent measurements of contacted nanosystems with a micrometer spatial and a picosecond time resolution. The measurement technique was applied to lowtemperature grown gallium arsenide (LT-GaAs), carbon nanotubes (CNTs), graphene, and p-doped gallium arsenide (GaAs) nanowires. The various mechanisms responsible for the generation of current pulses by pulsed laser excitation were reviewed. Furthermore the propagation of the resulting electromagnetic radiation along a coplanar stripline circuit was theoretically and numerically treated. The ultrafast photocurrent response of low-temperature grown GaAs was investigated. We found two photocurrent pulses in the time-resolved response. We showed that the first pulse is consistent with a displacement current pulse. We interpreted the second pulse to result from a transport current process. We further determined the velocity of the photo-generated charge carriers to exceed the drift, thermal and quantum velocities of single charge carriers. Hereby, we interpreted the transport current pulse to stem from an electron-hole plasma excitation. We demonstrated that the photocurrent response of CNTs comprises an ultrafast displacement current and a transport current. The data suggested that the photocurrent is finally terminated by the recombination lifetime of the charge carriers. To the best of our knowledge, we presented in this thesis the first recombination lifetime measurements of contacted, suspended, CVD grown CNT networks. In addition, we studied the ultrafast photocurrent dynamics of freely suspended graphene contacted by metal electrodes. At the graphene-metal interface, we demonstrated that built-in electric fields give rise to a photocurrent with a full-width-half-maximum of a few picoseconds and that a photo-thermoelectric effect generates a current with a decay time

  4. Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module

    Energy Technology Data Exchange (ETDEWEB)

    Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.


    We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

  5. Advances in gallium arsenide monolithic microwave integrated-circuit technology for space communications systems (United States)

    Bhasin, K. B.; Connolly, D. J.


    Future communications satellites are likely to use gallium arsenide (GaAs) monolithic microwave integrated-circuit (MMIC) technology in most, if not all, communications payload subsystems. Multiple-scanning-beam antenna systems are expected to use GaAs MMIC's to increase functional capability, to reduce volume, weight, and cost, and to greatly improve system reliability. RF and IF matrix switch technology based on GaAs MMIC's is also being developed for these reasons. MMIC technology, including gigabit-rate GaAs digital integrated circuits, offers substantial advantages in power consumption and weight over silicon technologies for high-throughput, on-board baseband processor systems. In this paper, current developments in GaAs MMIC technology are described, and the status and prospects of the technology are assessed.

  6. Ultrafast Relaxation Dynamics of Photo-excited Dirac Fermion in Three Dimensional Dirac Semimetal Cadmium Arsenide

    CERN Document Server

    Lu, Wei; Liu, Xuefeng; Lu, Hong; Li, Caizhen; Lai, Jiawei; Zhao, Chuan; Tian, Ye; Liao, Zhimin; Jia, Shuang; Sun, Dong


    Three dimensional (3D) Dirac semimetal exhibiting ultrahigh mobility has recently attracted enormous research interests as 3D analogues of graphene. From the prospects of future application toward electronic/optoelectronic devices with extreme performance, it is crucial to understand the relaxation dynamics of photo-excited carriers and their coupling with lattice. In this work, we report ultrafast transient reflection measurements of photo-excited carrier dynamics in cadmium arsenide (Cd3As2), which is among the most stable Dirac semimetals that have been confirmed experimentally. With low energy probe photon of 0.3 eV, photo-excited Dirac Fermions dynamics closing to Dirac point are probed. Through transient reflection measurements on bulk and nanoplate samples that have different doping intensities, and systematic probe wavelength, pump power and lattice temperature dependent measurements, the dynamical evolution of carrier distributions can be retrieved qualitatively using a two-temperature model. The pho...

  7. Methods for forming group III-V arsenide-nitride semiconductor materials (United States)

    Major, Jo S. (Inventor); Welch, David F. (Inventor); Scifres, Donald R. (Inventor)


    Methods are disclosed for forming Group III--arsenide-nitride semiconductor materials. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V crystals varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V crystals can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

  8. In situ characterization of uranium and americium oxide solid solution formation for CRMP process: first combination of in situ XRD and XANES measurements. (United States)

    Caisso, Marie; Picart, Sébastien; Belin, Renaud C; Lebreton, Florent; Martin, Philippe M; Dardenne, Kathy; Rothe, Jörg; Neuville, Daniel R; Delahaye, Thibaud; Ayral, André


    Transmutation of americium in heterogeneous mode through the use of U1-xAmxO2±δ ceramic pellets, also known as Americium Bearing Blankets (AmBB), has become a major research axis. Nevertheless, in order to consider future large-scale deployment, the processes involved in AmBB fabrication have to minimize fine particle dissemination, due to the presence of americium, which considerably increases the risk of contamination. New synthesis routes avoiding the use of pulverulent precursors are thus currently under development, such as the Calcined Resin Microsphere Pelletization (CRMP) process. It is based on the use of weak-acid resin (WAR) microspheres as precursors, loaded with actinide cations. After two specific calcinations under controlled atmospheres, resin microspheres are converted into oxide microspheres composed of a monophasic U1-xAmxO2±δ phase. Understanding the different mechanisms during thermal conversion, that lead to the release of organic matter and the formation of a solid solution, appear essential. By combining in situ techniques such as XRD and XAS, it has become possible to identify the key temperatures for oxide formation, and the corresponding oxidation states taken by uranium and americium during mineralization. This paper thus presents the first results on the mineralization of (U,Am) loaded resin microspheres into a solid solution, through in situ XAS analysis correlated with HT-XRD.

  9. LIBS Spectral Data for a Mixed Actinide Fuel Pellet Containing Uranium, Plutonium, Neptunium and Americium

    Energy Technology Data Exchange (ETDEWEB)

    Judge, Elizabeth J. [Los Alamos National Laboratory; Berg, John M. [Los Alamos National Laboratory; Le, Loan A. [Los Alamos National Laboratory; Lopez, Leon N. [Los Alamos National Laboratory; Barefield, James E. [Los Alamos National Laboratory


    Laser-induced breakdown spectroscopy (LIBS) was used to analyze a mixed actinide fuel pellet containing 75% UO{sub 2}/20% PuO{sub 2}/3% AmO{sub 2}/2% NpO{sub 2}. The preliminary data shown here is the first report of LIBS analysis of a mixed actinide fuel pellet, to the authors knowledge. The LIBS spectral data was acquired in a plutonium facility at Los Alamos National Laboratory where the sample was contained within a glove box. The initial installation of the glove box was not intended for complete ultraviolet (UV), visible (VIS) and near infrared (NIR) transmission, therefore the LIBS spectrum is truncated in the UV and NIR regions due to the optical transmission of the window port and filters that were installed. The optical collection of the emission from the LIBS plasma will be optimized in the future. However, the preliminary LIBS data acquired is worth reporting due to the uniqueness of the sample and spectral data. The analysis of several actinides in the presence of each other is an important feature of this analysis since traditional methods must chemically separate uranium, plutonium, neptunium, and americium prior to analysis. Due to the historic nature of the sample fuel pellet analyzed, the provided sample composition of 75% UO{sub 2}/20% PuO{sub 2}/3% AmO{sub 2}/2% NpO{sub 2} cannot be confirm without further analytical processing. Uranium, plutonium, and americium emission lines were abundant and easily assigned while neptunium was more difficult to identify. There may be several reasons for this observation, other than knowing the exact sample composition of the fuel pellet. First, the atomic emission wavelength resources for neptunium are limited and such techniques as hollow cathode discharge lamp have different dynamics than the plasma used in LIBS which results in different emission spectra. Secondly, due to the complex sample of four actinide elements, which all have very dense electronic energy levels, there may be reactions and

  10. Highly ordered horizontal indium gallium arsenide/indium phosphide multi-quantum-well in wire structure on (001) silicon substrates (United States)

    Han, Yu; Li, Qiang; Lau, Kei May


    We report the characteristics of indium gallium arsenide stacked quantum structures inside planar indium phosphide nanowires grown on exact (001) silicon substrates. The morphological evolution of the indium phosphide ridge buffers inside sub-micron trenches has been studied, and the role of inter-facet diffusion in this process is discussed. Inside a single indium phosphide nanowire, we are able to stack quantum structures including indium gallium arsenide flat quantum wells, quasi-quantum wires, quantum wires, and ridge quantum wells. Room temperature photoluminescence measurements reveal a broadband emission spectrum centered at 1550 nm. Power dependent photoluminescence analysis indicates the presence of quasi-continuum states. This work thus provides insights into the design and growth process control of multiple quantum wells in wire structures for high performance nanowire lasers on a silicon substrate with 1550 nm band emission.

  11. In-Plane Electronic Anisotropy of Underdoped ___122___ Fe-Arsenide Superconductors Revealed by Measurements of Detwinned Single Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Fisher, Ian Randal


    The parent phases of the Fe-arsenide superconductors harbor an antiferromagnetic ground state. Significantly, the Neel transition is either preceded or accompanied by a structural transition that breaks the four fold symmetry of the high-temperature lattice. Borrowing language from the field of soft condensed matter physics, this broken discrete rotational symmetry is widely referred to as an Ising nematic phase transition. Understanding the origin of this effect is a key component of a complete theoretical description of the occurrence of superconductivity in this family of compounds, motivating both theoretical and experimental investigation of the nematic transition and the associated in-plane anisotropy. Here we review recent experimental progress in determining the intrinsic in-plane electronic anisotropy as revealed by resistivity, reflectivity and ARPES measurements of detwinned single crystals of underdoped Fe arsenide superconductors in the '122' family of compounds.

  12. The Coefficients of Thermal Expansion of Boron Arsenide (B12As2) Between 25 C and 850 C

    Energy Technology Data Exchange (ETDEWEB)

    Whiteley, Clinton E. [Kansas State University; Kirkham, Melanie J [ORNL; Edgar, J H [Kansas State University


    The semiconductor boron arsenide has a high 10B density, a wide bandgap, and a high melting temperature, all of which make it an interesting candidate for high-temperature electronic devices and radiation detectors. The present investigation was undertaken to determine the coefficients of thermal expansion for boron arsenide. B12As2 powder was synthesized from boron and arsenic heated in a sealed quartz ampoule at 1100 C for 72 hrs with excess boron. Using high temperature X-ray diffraction (HTXRD) between 25 C and 850 C, the average lattice coefficients of thermal expansion were measured perpendicular and parallel to the <111> axis in the rhombohedral setting (equivalent to the a and c axes in the hexagonal setting): 4.9x10-6 K-1 and 5.3x10-6 K-1, respectively. The average unit cell volumetric coefficient of thermal expansion was determined to be 1.5x10-5 K-1.

  13. Boron Arsenide and Boron Phosphide for High Temperature and Luminescent Devices. [semiconductor devices - crystal growth/crystal structure (United States)

    Chu, T. L.


    The crystal growth of boron arsenide and boron phosphide in the form of bulk crystals and epitaxial layers on suitable substrates is discussed. The physical, chemical, and electrical properties of the crystals and epitaxial layers are examined. Bulk crystals of boron arsenide were prepared by the chemical transport technique, and their carrier concentration and Hall mobility were measured. The growth of boron arsenide crystals from high temperature solutions was attempted without success. Bulk crystals of boron phosphide were also prepared by chemical transport and solution growth techniques. Techniques required for the fabrication of boron phosphide devices such as junction shaping, diffusion, and contact formation were investigated. Alloying techniques were developed for the formation of low-resistance ohmic contacts to boron phosphide. Four types of boron phosphide devices were fabricated: (1) metal-insulator-boron phosphide structures, (2) Schottky barriers; (3) boron phosphide-silicon carbide heterojunctions; and (4) p-n homojunctions. Easily visible red electroluminescence was observed from both epitaxial and solution grown p-n junctions.

  14. Thermo-chemical properties and electrical resistivity of Zr-based arsenide chalcogenides

    Directory of Open Access Journals (Sweden)

    A. Schlechte, R. Niewa, M. Schmidt, G. Auffermann, Yu. Prots, W. Schnelle, D. Gnida, T. Cichorek, F. Steglich and R. Kniep


    Full Text Available Ternary phases in the systems Zr–As–Se and Zr–As–Te were studied using single crystals of ZrAs1.40(1Se0.50(1 and ZrAs1.60(2Te0.40(1 (PbFCl-type of structure, space group P4/nmm as well as ZrAs0.70(1Se1.30(1 and ZrAs0.75(1Te1.25(1 (NbPS-type of structure, space group Immm. The characterization covers chemical compositions, crystal structures, homogeneity ranges and electrical resistivities. At 1223 K, the Te-containing phases can be described with the general formula ZrAsxTe2−x, with 1.53(1≤x≤1.65(1 (As-rich and 0.58(1≤x≤0.75(1 (Te-rich. Both phases are located directly on the tie-line between ZrAs2 and ZrTe2, with no indication for any deviation. Similar is true for the Se-rich phase ZrAsxSe2−x with 0.70(1≤x≤0.75(1. However, the compositional range of the respective As-rich phase ZrAsx−ySe2−x (0.03(1≤y≤0.10(1; 1.42(1≤x≤1.70(1 is not located on the tie-line ZrAs2–ZrSe2, and exhibits a triangular region of existence with intrinsic deviation of the composition towards lower non-metal contents. Except for ZrAs0.75Se1.25, from the homogeneity range of the Se-rich phase, all compounds under investigation show metallic characteristics of electrical resistivity at temperatures >20 K. Related uranium and thorium arsenide selenides display a typical magnetic field-independent rise of the resistivity towards lower temperatures, which has been explained by a non-magnetic Kondo effect. However, a similar observation has been made for ZrAs1.40Se0.50, which, among the Zr-based arsenide chalcogenides, is the only system with a large concentration of intrinsic defects in the anionic substructure.

  15. Neutronic Study of Burnup, Radiotoxicity, Decay Heat and Basic Safety Parameters of Mono-Recycling of Americium in French Pressurised Water Reactors

    Directory of Open Access Journals (Sweden)

    Robert Bright Mawuko Sogbadji


    Full Text Available The reprocessing of actinides with long half-life has been non-existent except for plutonium (Pu. This work looks at reducing the actinides inventory nuclear fuel waste meant for permanent disposal. The uranium oxide fuel (UOX assembly, as in the open cycle system, was designed to reach a burnup of 46GWd/T and 68GWd/T using the MURE code. The MURE code is based on the coupling of a static Monte Carlo code and the calculation of the evolution of the fuel during irradiation and cooling periods. The MURE code has been used to address two different questions concerning the mono-recycling of americium (Am in present French pressurised water reactors (PWR. These are reduction of americium in the clear fuel cycle and the safe quantity of americium that can be introduced into mixed oxide (MOX as fuel. The spent UOX was reprocessed to fabricate MOX assemblies, by the extraction of plutonium and addition of depleted uranium to reach burnups of 46GWd/T and 68GWd/T, taking into account various cooling times of the spent UOX assembly in the repository. The effect of cooling time on burnup and radiotoxicity was then ascertained. After 30 years of cooling in the repository, the spent UOX fuel required a higher concentration of Pu to be reprocessed into MOX fuel due to the decay of Pu-241. Americium, with a mean half-life of 432 years, has a high radiotoxicity level, high mid-term residual heat and is a precursor for other long-lived isotopes. An innovative strategy would be to reprocess not only the plutonium from the UOX spent fuel but also the americium isotopes, which presently dominate the radiotoxicity of waste. The mono-recycling of Am is not a definitive solution because the once-through MOX cycle transmutation of Am in a PWR is not enough to destroy all americium. The main objective is to propose a ‘waiting strategy’ for both Am and Pu in the spent fuel so that they can be made available for further transmutation strategies. The MOX and


    Energy Technology Data Exchange (ETDEWEB)

    Cunningham, B.B.; Asprey, L.B.


    The microgram scale isolation and preparation of pure compounds of americium is described. Data are presented to show that the alpha-half-life of the isotope Am{sup 241} is 490 {+-} 14 years. The absorption spectrum of Am(III) in 1M nitric acid in the range 3500-8000 mu is given. The wave lengths of 10 of the most prominent lines in the copper spark emission spectrum of americium are given to the nearest 0.01 {angstrom}. Evidence is presented to show that the potential for the Am(III)-Am(IV) couple in acid solution is more negative than -2v and that the potential for the Am(II)-Am(III) couple is more positive than +0.9v.

  17. Triamidoamine thorium-arsenic complexes with parent arsenide, arsinidiide and arsenido structural motifs (United States)

    Wildman, Elizabeth P.; Balázs, Gábor; Wooles, Ashley J.; Scheer, Manfred; Liddle, Stephen T.


    Despite a major expansion of uranium-ligand multiple bond chemistry in recent years, analogous complexes involving other actinides (An) remain scarce. For thorium, under ambient conditions only a few multiple bonds to carbon, nitrogen, phosphorus and chalcogenides are reported, and none to arsenic are known; indeed only two complexes with thorium-arsenic single bonds have been structurally authenticated, reflecting the challenges of stabilizing polar linkages at the large thorium ion. Here, we report thorium parent-arsenide (ThAsH2), -arsinidiides (ThAs(H)K and ThAs(H)Th) and arsenido (ThAsTh) linkages stabilized by a bulky triamidoamine ligand. The ThAs(H)K and ThAsTh linkages exhibit polarized-covalent thorium-arsenic multiple bonding interactions, hitherto restricted to cryogenic matrix isolation experiments, and the AnAs(H)An and AnAsAn linkages reported here have no precedent in f-block chemistry. 7s, 6d and 5f orbital contributions to the Th-As bonds are suggested by quantum chemical calculations, and their compositions unexpectedly appear to be tensioned differently compared to phosphorus congeners.

  18. Modelling of the small pixel effect in gallium arsenide X-ray imaging detectors

    CERN Document Server

    Sellin, P J


    A Monte Carlo simulation has been carried out to investigate the small pixel effect in highly pixellated X-ray imaging detectors fabricated from semi-insulating gallium arsenide. The presence of highly non-uniform weighting fields in detectors with a small pixel geometry causes the majority of the induced signal to be generated when the moving charges are close to the pixellated contacts. The response of GaAs X-ray imaging detectors is further complicated by the presence of charge trapping, particularly of electrons. In this work detectors are modelled with a pixel pitch of 40 and 150 mu m, and with thicknesses of 300 and 500 mu m. Pulses induced in devices with 40 mu m pixels are due almost totally to the movement of the lightly-trapped holes and can exhibit significantly higher charge collection efficiencies than detectors with large electrodes, in which electron trapping is significant. Details of the charge collection efficiencies as a function of interaction depth in the detector and of the incident phot...

  19. Triamidoamine thorium-arsenic complexes with parent arsenide, arsinidiide and arsenido structural motifs (United States)

    Wildman, Elizabeth P.; Balázs, Gábor; Wooles, Ashley J.; Scheer, Manfred; Liddle, Stephen T.


    Despite a major expansion of uranium–ligand multiple bond chemistry in recent years, analogous complexes involving other actinides (An) remain scarce. For thorium, under ambient conditions only a few multiple bonds to carbon, nitrogen, phosphorus and chalcogenides are reported, and none to arsenic are known; indeed only two complexes with thorium–arsenic single bonds have been structurally authenticated, reflecting the challenges of stabilizing polar linkages at the large thorium ion. Here, we report thorium parent–arsenide (ThAsH2), –arsinidiides (ThAs(H)K and ThAs(H)Th) and arsenido (ThAsTh) linkages stabilized by a bulky triamidoamine ligand. The ThAs(H)K and ThAsTh linkages exhibit polarized-covalent thorium–arsenic multiple bonding interactions, hitherto restricted to cryogenic matrix isolation experiments, and the AnAs(H)An and AnAsAn linkages reported here have no precedent in f-block chemistry. 7s, 6d and 5f orbital contributions to the Th–As bonds are suggested by quantum chemical calculations, and their compositions unexpectedly appear to be tensioned differently compared to phosphorus congeners. PMID:28276437

  20. Evaluation of a gallium arsenide solar panel on the LIPS II satellite

    Energy Technology Data Exchange (ETDEWEB)

    Trumble, T.M.; Betz, F.


    On 10 February 1983 the Living Plume Shield (LIPS II) satellite was launched by the Naval Research Laboratory with three double sided solar panels providing electrical power. One side of one panel contains 300 2cm X 2cm gallium arsenide (GaAs) solar cells while each of the other five sides contain 104 2.1cm X 6.2cm silicon (Si) solar cells. The U.S. Air Force developed GaAs cells were provided to the Navy in a cooperative program to build, test, qualify and fly a GaAs solar panel. Nineteen months after the beginning of the cooperative program the vehicle was launched. There are considerable statistical variances in the data and data cannot be acquired continuously owing to the requirement to be over a tracking station while the GaAs panel is facing the sun. The first 30 days of operation were unmeasured due to satellite orientation problems. The first measurements indicated a 7.3% power loss in panel performance compared to ground preflight measurements. This loss is still unexplained. This paper provides a summary of the LIPS II program and the data analysis on the GaAs solar panel performance for the first year in orbit.

  1. Monopole Charge Domain in High-Gain Gallium Arsenide Photoconductive Switches

    Institute of Scientific and Technical Information of China (English)

    施卫; 陈二柱; 张显斌; 李琦


    Considering that semi-insulating gallium arsenide photoconductive switches can be triggered into the high gain mode and no reliable theories can account for the observed transient characteristics, we propose the monopole charge domain model to explain the peculiar switching phenomena occurring in the high gain mode and we discuss the requirements for the lock-on switching. During operation on this mode, the applied field across the switch and the lock-on field are all larger than the Gunn threshold field. Our developed monopole charge domain is based on the transferred-electron effect, but the domain is only composed of large numbers of electrons piled up due to the negative differential mobility. Using the model and taking the physical mechanism of the avalanche impact ionization and recombination radiation into consideration, we interpret the typical phenomena of the lock-on effect, such as the time delay between the beginning of optical illumination and turning-on of the switch, and the conduction mechanism of the sustaining phase. Under different conditions of bias field intensity and incident light energy, the time delay of the switching is calculated. The results show that the physical mechanisms of impact ionization and recombination radiation occurring in the monopole charge domain are responsible for the lock-on switching.

  2. Superconductivity in the ternary iridium-arsenide BaIr2As2 (United States)

    Wang, Xiao-Chuan; Ruan, Bin-Bin; Yu, Jia; Pan, Bo-Jin; Mu, Qing-Ge; Liu, Tong; Chen, Gen-Fu; Ren, Zhi-An


    Here we report the synthesis and discovery of superconductivity in a novel ternary iridium-arsenide compound BaIr2As2. The polycrystalline BaIr2As2 sample was first synthesized by a high temperature and high pressure method. Crystal structural analysis indicates that BaIr2As2 crystallizes in the ThCr2Si2-type layered tetragonal structure with space group I4/mmm (No. 139), and the lattice parameters were refined to be a = 4.052(9) Å and c = 12.787(8) Å. By the electrical resistivity and magnetic susceptibility measurements we found type-II superconductivity in the new BaIr2As2 compound with a T c (critical temperature) of 2.45 K, and an upper critical field μ 0 H c2(0) about 0.2 T. Low temperature specific heat measurements gave a Debye temperature of about 202 K and a distinct specific jump with ΔC e /γT c = 1.36, which is close to the value of BCS weak coupling limit and confirms the bulk superconductivity in this new BaIr2As2 compound.

  3. Ab-initio Electronic, Transport and Related Properties of Zinc Blende Boron Arsenide (zb-BAs) (United States)

    Nwigboji, Ifeanyi H.; Malozovsky, Yuriy; Bagayoko, Diola

    We present results from ab-initio, self-consistent density functional theory (DFT) calculations of electronic, transport, and bulk properties of zinc blende boron arsenide (zb-BAs). We utilized a local density approximation (LDA) potential and the linear combination of atomic orbital (LCAO) formalism. Our computational technique follows the Bagayoko, Zhao, and Williams method, as enhanced by Ekuma and Franklin. Our results include electronic energy bands, densities of states, and effective masses. We explain the agreement between these findings, including the indirect band gap, and available, corresponding, experimental ones. This work confirms the capability of DFT to describe accurately properties of materials, provided the computations adhere to the conditions of validity of DFT [AIP Advances, 4, 127104 (2014)]. Acknowledgments: This work was funded in part by the National Science Foundation (NSF) and the Louisiana Board of Regents, through LASiGMA [Award Nos. EPS- 1003897, NSF (2010-15)-RII-SUBR] and NSF HRD-1002541, the US Department of Energy - National, Nuclear Security Administration (NNSA) (Award No. DE- NA0002630), LaSPACE, and LONI-SUBR.

  4. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Wampler, William R.; Myers, Samuel Maxwell,


    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  5. Nonlinear radiation response of n-doped indium antimonide and indium arsenide in intense terahertz field (United States)

    Gong, Jiao-Li; Liu, Jin-Song; Chu, Zheng; Yang, Zhen-Gang; Wang, Ke-Jia; Yao, Jian-Quan


    The nonlinear radiation responses of two different n-doped bulk semiconductors: indium antimonide (InSb) and indium arsenide (InAs) in an intense terahertz (THz) field are studied by using the method of ensemble Monte Carlo (EMC) at room temperature. The results show that the radiations of two materials generate about 2-THz periodic regular spectrum distributions under a high field of 100 kV/cm at 1-THz center frequency. The center frequencies are enhanced to about 7 THz in InSb, and only 5 THz in InAs, respectively. The electron valley occupancy and the percentage of new electrons excited by impact ionization are also calculated. We find that the band nonparabolicity and impact ionization promote the generation of nonlinear high frequency radiation, while intervalley scattering has the opposite effect. Moreover, the impact ionization dominates in InSb, while impact ionization and intervalley scattering work together in InAs. These characteristics have potential applications in up-convension of THz wave and THz nonlinear frequency multiplication field. Project supported by the National Natural Science Foundation of China (Grant Nos. 11574105 and 61177095), the Natural Science Foundation of Hubei Province, China (Grant Nos. 2012FFA074 and 2013BAA002), the Wuhan Municipal Applied Basic Research Project, China (Grant No. 20140101010009), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 2013KXYQ004 and 2014ZZGH021).

  6. Fabrication and applications of orientation-patterned gallium arsenide for mid-infrared generation

    Energy Technology Data Exchange (ETDEWEB)

    Grisard, A.; Gutty, F.; Lallier, E. [Thales Research and Technology France, 1 av. Augustin Fresnel, 91767 Palaiseau Cedex (France); Gerard, B. [III-V Lab, 1 av. Augustin Fresnel, 91767 Palaiseau Cedex (France); Jimenez, J. [GdS Optronlab, Fisica Materia Condensada, Universidad de Valladolid, 47011 Valladolid (Spain)


    Nonlinear optical materials play a key role in the development of coherent sources of radiation, by frequency conversion of light from other light sources, e.g. diode, solid-state, and fiber lasers, into spectral ranges where few lasers exist or perform poorly. Based on the principle of the quasi-phase matching, the design and fabrication of orientation-patterned Gallium Arsenide crystals (OP-GaAs) has recently led to demonstrations of second harmonic generation, optical parametric generation, amplification and oscillation from 1 to 12 {mu}m. The most efficient fabrication route for these crystals relies on the use of the near-equilibrium growth process HVPE (Hydride Vapour Phase Epitaxy), by orientation-selective regrowth on OP-GaAs template wafers with a thickness suited to bulk nonlinear optics. This work deals with recent characterizations based on optical experiments and cathodoluminescence measurements, targeting the identification of the main defects, their spatial distribution, and their relation to the optical propagation losses. Latest improvements of the HVPE growth step have enabled to reach an unprecedented level of losses, below 0.016 cm{sup -1}, and a large range of available QPM periods and thickness of structures (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Intramolecular sensitization of americium luminescence in solution: shining light on short-lived forbidden 5f transitions. (United States)

    Sturzbecher-Hoehne, M; Yang, P; D'Aléo, A; Abergel, R J


    The photophysical properties and solution thermodynamics of water soluble trivalent americium (Am(III)) complexes formed with multidentate chromophore-bearing ligands, 3,4,3-LI(1,2-HOPO), Enterobactin, and 5-LIO(Me-3,2-HOPO), were investigated. The three chelators were shown to act as antenna chromophores for Am(III), generating sensitized luminescence emission from the metal upon complexation, with very short lifetimes ranging from 33 to 42 ns and low luminescence quantum yields (10(-3) to 10(-2)%), characteristic of Near Infra-Red emitters in similar systems. The specific emission peak of Am(III) assigned to the (5)D1 → (7)F1 f-f transition was exploited to characterize the high proton-independent stability of the complex formed with the most efficient sensitizer 3,4,3-LI(1,2-HOPO), with a log β110 = 20.4 ± 0.2 value. In addition, the optical and solution thermodynamic features of these Am(III) complexes, combined with density functional theory calculations, were used to probe the influence of electronic structure on coordination properties across the f-element series and to gain insight into ligand field effects.

  8. Response of avalanche photo-diodes of the CMS Electromagnetic Calorimeter to neutrons from an Americium-Beryllium source.

    CERN Document Server

    Deiters, Konrad; Renker, Dieter


    The response of avalanche photo-diodes (APDs) used in the CMS Electromagnetic Calorimeter to low energy neutrons from an Americium-Beryllium source is reported. Signals due to recoil protons from neutron interactions with the hydrogen nuclei in the protective epoxy layer, mainly close to the silicon surface of the APD, have been identified. These signals increase in size with the applied bias voltage more slowly than the nominal gain of the APDs, and appear to have a substantially lower effective gain at the operating voltage. The signals originating from interactions in the epoxy are mostly equivalent to signals of a few GeV in CMS, but range up to a few tens of GeV equivalent. There are also signals not attributed to reactions in the epoxy extending up to the end of the range of these measurements, a few hundreds of GeV equivalent. Signals from the x-rays from the source can also be in the GeV equivalent scale in CMS. Simulations used to describe events due to particle interactions in the APDs need to take ...

  9. Nano-cerium vanadate: a novel inorganic ion exchanger for removal of americium and uranium from simulated aqueous nuclear waste. (United States)

    Banerjee, Chayan; Dudwadkar, Nilesh; Tripathi, Subhash Chandra; Gandhi, Pritam Maniklal; Grover, Vinita; Kaushik, Chetan Prakash; Tyagi, Avesh Kumar


    Cerium vanadate nanopowders were synthesized by a facile low temperature co-precipitation method. The product was characterized by X-ray diffraction and transmission electron microscopy and found to consist of ∼25 nm spherical nanoparticles. The efficiency of these nanopowders for uptake of alpha-emitting radionuclides (233)U (4.82 MeV α) and (241)Am (5.49 MeV α, 60 keV γ) has been investigated. Thermodynamically and kinetically favorable uptake of these radionuclides resulted in their complete removal within 3h from aqueous acidic feed solutions. The uptake capacity was observed to increase with increase in pH as the zeta potential value decreased with the increase in pH but effect of ionic strength was insignificant. Little influence of the ions like Sr(2+), Ru(3+), Fe(3+), etc., in the uptake process indicated CeVO4 nanopowders to be amenable for practical applications. The isotherms indicated predominant uptake of the radioactive metal ions in the solid phase of the exchanger at lower feed concentrations and linear Kielland plots with positive slopes indicated favorable exchange of the metal ions with the nanopowder. Performance comparison with the other sorbents reported indicated excellent potential of nano-cerium vanadate for removing americium and uranium from large volumes of aqueous acidic solutions.

  10. Development of devices and systems of growth of gallium arsenide ingots for micro, nano electronics and photovoltaics

    Directory of Open Access Journals (Sweden)

    A. P. Oksanich


    Full Text Available Gallium arsenide is a perspective semiconductor, the need for which is constantly increasing. This is associated with the development of electronic components operating in excess of the high frequency range and development of terrestrial photovoltaics based on gallium arsenide solar cells. Increase in diameter of grown ingots leads to a deterioration in their performance, which is caused by the imperfection of growing technology. The paper presents the results of the development of systems and devices which help to improve existing technology to produce GaAs ingots and wafers with a diameter of 100 mm with the best technical parameters. Developed a system to manage growing GaAs ingot. As a sensor of diameter ingot it uses a weighting method provides a measurement error in the process of growing ± 1,0 mm. The system allows to grow GaAs ingots with an error of ± 2 mm. For the formation of temperature gradients developed thermal unit, which provides a gradient of 51 .. 53 K cm in growing of ingots with diameter of 100 mm. For adjusting the process parameters were developed measuring device of the internal stresses that are generated in the ingot during the growth of the GaAs ingot. Presented in paper technical solutions provided a silicon ingot with a diameter of 100 mm. with mobility, cm2 V-1 s-1 - 2500 ÷ 3500, the charge carrier density, cm-3 - 5x1017 ÷ 5x1018; dislocation density, cm-2 - to 8x104.

  11. Phase diagram of (Li(1-x)Fe(x))OHFeSe: a bridge between iron selenide and arsenide superconductors. (United States)

    Dong, Xiaoli; Zhou, Huaxue; Yang, Huaixin; Yuan, Jie; Jin, Kui; Zhou, Fang; Yuan, Dongna; Wei, Linlin; Li, Jianqi; Wang, Xinqiang; Zhang, Guangming; Zhao, Zhongxian


    Previous experimental results have shown important differences between iron selenide and arsenide superconductors which seem to suggest that the high-temperature superconductivity in these two subgroups of iron-based families may arise from different electronic ground states. Here we report the complete phase diagram of a newly synthesized superconducting (SC) system, (Li1-xFex)OHFeSe, with a structure similar to that of FeAs-based superconductors. In the non-SC samples, an antiferromagnetic (AFM) spin-density-wave (SDW) transition occurs at ∼127 K. This is the first example to demonstrate such an SDW phase in an FeSe-based superconductor system. Transmission electron microscopy shows that a well-known √5×√5 iron vacancy ordered state, resulting in an AFM order at ∼500 K in AyFe2-xSe2 (A = metal ions) superconductor systems, is absent in both non-SC and SC samples, but a unique superstructure with a modulation wave vector q = (1)/2(1,1,0), identical to that seen in the SC phase of KyFe2-xSe2, is dominant in the optimal SC sample (with an SC transition temperature Tc = 40 K). Hence, we conclude that the high-Tc superconductivity in (Li1-xFex)OHFeSe stems from the similarly weak AFM fluctuations as FeAs-based superconductors, suggesting a universal physical picture for both iron selenide and arsenide superconductors.

  12. Determination by gamma-ray spectrometry of the plutonium and americium content of the Pu/Am separation scraps. Application to molten salts; Determination par spectrometrie gamma de la teneur en plutonium et en americium de produits issus de separation Pu/Am. Application aux bains de sels

    Energy Technology Data Exchange (ETDEWEB)

    Godot, A. [CEA Valduc, Dept. de Traitement des Materiaux Nucleaires, 21 - Is-sur-Tille (France); Perot, B. [CEA Cadarache, Dept. de Technologie Nucleaire, Service de Modelisation des Transferts et Mesures Nucleaires, 13 - Saint-Paul-lez-Durance (France)


    Within the framework of plutonium recycling operations in CEA Valduc (France), americium is extracted from molten plutonium metal into a molten salt during an electrolysis process. The scraps (spent salt, cathode, and crucible) contain extracted americium and a part of plutonium. Nuclear material management requires a very accurate determination of the plutonium content. Gamma-ray spectroscopy is performed on Molten Salt Extraction (MSE) scraps located inside the glove box, in order to assess the plutonium and americium contents. The measurement accuracy is influenced by the device geometry, nuclear instrumentation, screens located between the sample and the detector, counting statistics and matrix attenuation, self-absorption within the spent salt being very important. The purpose of this study is to validate the 'infinite energy extrapolation' method employed to correct for self-attenuation, and to detect any potential bias. We present a numerical study performed with the MCNP computer code to identify the most influential parameters and some suggestions to improve the measurement accuracy. A final uncertainty of approximately 40% is achieved on the plutonium mass. (authors)

  13. Transfer across the human gut of environmental plutonium, americium, cobalt, caesium and technetium: studies with cockles (Cerastoderma edule) from the Irish Sea. (United States)

    Hunt, G J


    Our previous studies have indicated lower values of the gut transfer factor ('f1 values') for plutonium and americium in winkles (Littorina littorea) than adopted by ICRP. The present study was undertaken primarily to investigate whether this observation extends to other species. Samples of cockles (Carastoderma edule) from Ravenglass, Cumbria were eaten by volunteers who provided 24 h samples of urine and faeces. Urine samples indicated f1 values for cockles which were higher than for winkles; for plutonium these ranged overall up to 7 x 10(-4) with an arithmetic mean in the range (2-3) x 10(-4), and for americium up to 2.6 x 10(-4) with an arithmetic mean of 1.2 x 10(-4). Limited data based on volunteers eating cockles from the Solway suggest that f1 values for americium may be greater at distance from Sellafield. The measured values compare with 5 x 10(-4) used by the ICRP for environmental forms of both elements, which would appear to provide adequate protection when calculating doses from Cumbrian cockles. Data for other nuclides were obtained by analysing faecal samples from the volunteers who ate the Ravenglass cockles. Cobalt-60 showed an f1 value in the region of 0.2, twice the value currently used by ICRP. For 137Cs, variabilities were indicated in the range 0.08 to 0.43, within the ICRP value of f1 = 1.0. Technetium-99 gave f1 values up to about 0.6, in reasonable conformity with the ICRP value of 0.5.

  14. Transfer across the human gut of environmental plutonium, americium, cobalt, caesium and technetium: studies with cockles (Cerastoderma edule) from the Irish Sea

    Energy Technology Data Exchange (ETDEWEB)

    Hunt, G.J. [CEFAS Laboratory, Lowestoft, Suffolk NR33 0HT (United Kingdom)


    Our previous studies have indicated lower values of the gut transfer factor ('f{sub L} values') for plutonium and americium in winkles (Littorina littorea) than adopted by ICRP. The present study was undertaken primarily to investigate whether this observation extends to other species. Samples of cockles (Cerastoderma edule) from Ravenglass, Cumbria were eaten by volunteers who provided 24 samples of urine and faeces. Urine samples indicated f{sub L} values for cockles which were higher than for winkles; for plutonium these ranged overall up to 7x10{sup -4} with an arithmetic mean in the range (2-3)x10{sup -4}, and for americium up to 2.6x10{sup -4} with an arithmetic mean of 1.2x10{sup -4}. Limited data based on volunteers eating cockles from the Solway suggest that f{sub L} values for americium may be greater at distance from Sellafield. The measured values compare with 5x10{sup -4} used by the ICRP for environmental forms of both elements, which would appear to provide adequate protection when calculating doses from Cumbrian cockles. Data for other nuclides were obtained by analysing faecal samples from the volunteers who ate the Ravenglass cockles. Cobalt-60 showed an f{sub L} value in the region of 0.2, twice the value currently used by ICRP. For {sup 137}Cs, variabilities were indicated in the range 0.08 to 0.43, within the ICRP value of f{sub L}=1.0. Technetium-99 gave f{sub L} values up to about 0.6, in reasonable conformity with the ICRP value of 0.5. (author)

  15. Nano-cerium vanadate: A novel inorganic ion exchanger for removal of americium and uranium from simulated aqueous nuclear waste

    Energy Technology Data Exchange (ETDEWEB)

    Banerjee, Chayan; Dudwadkar, Nilesh [Fuel Reprocessing Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Tripathi, Subhash Chandra, E-mail: [Fuel Reprocessing Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Gandhi, Pritam Maniklal [Fuel Reprocessing Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Grover, Vinita [Waste Management Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Kaushik, Chetan Prakash [Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Tyagi, Avesh Kumar, E-mail: [Waste Management Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)


    Highlights: • Template free, low temperature synthesis of CeVO{sub 4} nanopowders. • Thermodynamically and kinetically favourable uptake of Am(III) and U(VI) exhibited. • K{sub d} and ΔG° values for Am(III) and U(VI) uptake in pH 1–6 are reported. • Interdiffusion coefficients and zeta potential values in pH 1–6 are reported. • Possible application in low level aqueous nuclear waste remediation. - Abstract: Cerium vanadate nanopowders were synthesized by a facile low temperature co-precipitation method. The product was characterized by X-ray diffraction and transmission electron microscopy and found to consist of ∼25 nm spherical nanoparticles. The efficiency of these nanopowders for uptake of alpha-emitting radionuclides {sup 233}U (4.82 MeV α) and {sup 241}Am (5.49 MeV α, 60 keV γ) has been investigated. Thermodynamically and kinetically favorable uptake of these radionuclides resulted in their complete removal within 3 h from aqueous acidic feed solutions. The uptake capacity was observed to increase with increase in pH as the zeta potential value decreased with the increase in pH but effect of ionic strength was insignificant. Little influence of the ions like Sr{sup 2+}, Ru{sup 3+}, Fe{sup 3+}, etc., in the uptake process indicated CeVO{sub 4} nanopowders to be amenable for practical applications. The isotherms indicated predominant uptake of the radioactive metal ions in the solid phase of the exchanger at lower feed concentrations and linear Kielland plots with positive slopes indicated favorable exchange of the metal ions with the nanopowder. Performance comparison with the other sorbents reported indicated excellent potential of nano-cerium vanadate for removing americium and uranium from large volumes of aqueous acidic solutions.

  16. Plutonium, americium and radiocaesium in the marine environment close to the Vandellos I nuclear power plant before decommissioning

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez-Cabeza, J.A. E-mail:; Molero, J


    The Vandellos nuclear power plant (NPP), releasing low-level radioactive liquid waste to the Mediterranean Sea, is the first to be decommissioned in Spain, after an incident which occurred in 1989. The presence, distribution and uptake of various artificial radionuclides (radiocaesium, plutonium and americium) in the environment close to the plant were studied in seawater, bottom sediments and biota, including Posidonia oceanica, fish, crustaceans and molluscs. Seawater, sediments and Posidonia oceanica showed enhanced levels in the close vicinity of the NPP, although the effect was restricted to its near environment. Maximum concentrations in seawater were 11.6{+-}0.5 Bq m{sup -3} and 16.9{+-}1.2 mBq m{sup -3} for {sup 137}Cs and {sup 239,240}Pu, respectively. When sediment concentrations were normalized to excess {sup 210}Pb, they showed both the short-distance transport of artificial radionuclides from the Vandellos plant and the long-distance transport of {sup 137}Cs from the Asco NPP. Posidonia oceanica showed the presence of various gamma-emitters attributed to the impact of the Chernobyl accident, on which the effect of the NPP was superimposed. Seawater, sediment and Posidonia oceanica collected near the plant also showed an enhancement of the plutonium isotopic ratio above the fallout value. The uptake of these radionuclides by marine organisms was detectable but limited. Pelagic fish showed relatively higher {sup 137}Cs concentrations and only in the case of demersal fish was the plutonium isotopic ratio increased. The reported levels constitute a set of baseline values against which the impact of the decommissioning operations of the Vandellos I NPP can be studied.

  17. The structures of CyMe4-BTBP complexes of americium(iii) and europium(iii) in solvents used in solvent extraction, explaining their separation properties. (United States)

    Ekberg, Christian; Löfström-Engdahl, Elin; Aneheim, Emma; Foreman, Mark R StJ; Geist, Andreas; Lundberg, Daniel; Denecke, Melissa; Persson, Ingmar


    Separation of trivalent actinoid (An(iii)) and lanthanoid (Ln(iii)) ions is extremely challenging due to their similar ionic radii and chemical properties. Poly-aromatic nitrogen compounds acting as tetradentate chelating ligands to the metal ions in the extraction, have the ability to sufficiently separate An(iii) from Ln(iii). One of these compounds, 6,6'-bis(5,5,8,8-tetramethyl-5,6,7,8-tetrahydro-benzol[1,2,4]triazin-3-yl)[2,2]bipyridine, CyMe4-BTBP, has proven to be resistant towards acidic environments and strong radiation from radioactive decomposition. EXAFS studies of the dicomplexes of CyMe4-BTBP with americium(iii) and europium(iii) in nitrobenzene, cyclohexanone, 1-hexanol, 1-octanol and malonamide (DMDOHEMA) in 1-octanol have been carried out to get a deeper understanding of the parameters responsible for the separation. The predominating complexes independent of solvent used are [Am(CyMe4-BTBP)2(NO3)](2+) and [Eu(CyMe4-BTBP)2](3+), respectively, which are present as outer-sphere ion-pairs with nitrate ions in the studied solvents with low relative permittivity. The presence of a nitrate ion in the first coordination sphere of the americium(iii) complex compensates the charge density of the complex considerably in comparison when only outer-sphere ion-pairs are formed as for the [Eu(CyMe4-BTBP)2](3+) complex. The stability and solubility of a complex in a solvent with low relative permittivity increase with decreasing charge density. The [Am(CyMe4-BTBP)2(NO3)](2+) complex will therefore be increasingly soluble and stabilized over the [Eu(CyMe4-BTBP)2](3+) complex in solvents with decreasing relative permittivity of the solvent. The separation of americium(iii) from europium(iii) with CyMe4-BTBP as extraction agent will increase with decreasing relative permittivity of the solvent, and thereby also with decreasing solubility of CyMe4-BTBP. The choice of solvent is therefore a balance of a high separation factor and sufficient solubility of the CyMe4-BTBP

  18. Electron tunneling transport across heterojunctions between europium sulfide and indium arsenide (United States)

    Kallaher, Raymond L.

    This dissertation presents research done on utilizing the ferromagnetic semiconductor europium sulfide (EuS) to inject spin polarized electrons into the non-magnetic semiconductor indium arsenide (InAs). There is great interest in expanding the functionality of modern day electronic circuits by creating devices that depend not only on the flow of charge in the device, but also on the transport of spin through the device. Within this mindset, there is a concerted effort to establish an efficient means of injecting and detecting spin polarized electrons in a two dimensional electron system (2DES) as the first step in developing a spin based field effect transistor. Thus, the research presented in this thesis has focused on the feasibility of using EuS, in direct electrical contact with InAs, as a spin injecting electrode into an InAs 2DES. Doped EuS is a concentrated ferromagnetic semiconductor, whose conduction band undergoes a giant Zeeman splitting when the material becomes ferromagnetic. The concomitant difference in energy between the spin-up and spin-down energy bands makes the itinerant electrons in EuS highly spin polarized. Thus, in principle, EuS is a good candidate to be used as an injector of spin polarized electrons into non-magnetic materials. In addition, the ability to adjust the conductivity of EuS by varying the doping level in the material makes EuS particularly suited for injecting spins into non-magnetic semiconductors and 2DES. For this research, thin films of EuS have been grown via e-beam evaporation of EuS powder. This growth technique produces EuS films that are sulfur deficient; these sulfur vacancies act as intrinsic electron donors and the resulting EuS films behave like heavily doped ferromagnetic semiconductors. The growth parameters and deposition procedures were varied and optimized in order to fabricate films that have minimal crystalline defects. Various properties and characteristics of these EuS films were measured and compared to

  19. Point defects and electric compensation in gallium arsenide single crystals; Punktdefekte und elektrische Kompensation in Galliumarsenid-Einkristallen

    Energy Technology Data Exchange (ETDEWEB)

    Kretzer, Ulrich


    In the present thesis the point-defect budget of gallium arsenide single crystals with different dopings is studied. It is shown, in which way the concentration of the single point defects depende on the concentration of the dopants, the stoichiometry deviation, and the position of the Fermi level. For this serve the results of the measurement-technical characterization of a large number of samples, in the fabrication of which these parameters were directedly varied. The main topic of this thesis lies in the development of models, which allow a quantitative description of the experimentally studied electrical and optical properties of gallium arsenide single crystals starting from the point-defect concentrations. Because from point defects charge carriers can be set free, their concentration determines essentially the charge-carrier concentration in the bands. In the ionized state point defects act as scattering centers for free charge carriers and influence by this the drift mobility of the charge carriers. A thermodynamic modeling of the point-defect formation yields statements on the equilibrium concentrations of the point defects in dependence on dopant concentration and stoichiometry deviation. It is show that the electrical properties of the crystals observed at room temperature result from the kinetic suppression of processes, via which the adjustment of a thermodynamic equilibrium between the point defects is mediated. [German] In der vorliegenden Arbeit wird der Punktdefekthaushalt von Galliumarsenid-Einkristallen mit unterschiedlichen Dotierungen untersucht. Es wird gezeigt, in welcher Weise die Konzentration der einzelnen Punktdefekte von der Konzentration der Dotierstoffe, der Stoechiometrieabweichung und der Lage des Ferminiveaus abhaengen. Dazu dienen die Ergebnisse der messtechnischen Charakterisierung einer grossen Anzahl von Proben, bei deren Herstellung diese Parameter gezielt variiert wurden. Der Schwerpunkt der Arbeit liegt in der Entwicklung

  20. Determination of Atto- to Femtogram Levels of Americium and Curium Isotopes in Large-Volume Urine Samples by Compact Accelerator Mass Spectrometry. (United States)

    Dai, Xiongxin; Christl, Marcus; Kramer-Tremblay, Sheila; Synal, Hans-Arno


    Ultralow level analysis of actinides in urine samples may be required for dose assessment in the event of internal exposures to these radionuclides at nuclear facilities and nuclear power plants. A new bioassay method for analysis of sub-femtogram levels of Am and Cm in large-volume urine samples was developed. Americium and curium were co-precipitated with hydrous titanium oxide from the urine matrix and purified by column chromatography separation. After target preparation using mixed titanium/iron oxides, the final sample was measured by compact accelerator mass spectrometry. Urine samples spiked with known quantities of Am and Cm isotopes in the range of attogram to femtogram levels were measured for method evaluation. The results are in good agreement with the expected values, demonstrating the feasibility of compact accelerator mass spectrometry (AMS) for the determination of minor actinides at the levels of attogram/liter in urine samples to meet stringent sensitivity requirements for internal dosimetry assessment.

  1. Artificial radionuclides in the Northern European Marine Environment. Distribution of radiocaesium, plutonium and americium in sea water and sediments in 1995

    Energy Technology Data Exchange (ETDEWEB)

    Groettheim, Siri


    This study considers the distribution of radiocaesium, plutonium and americium in the northern marine environment. The highest radiocaesium activity in sea water was observed in Skagerrak, 26 Bq/m{sub 3}, and in surface sediments in the Norwegian Sea, 60 Bq/kg. These enhanced levels were related to Chernobyl. The highest 239,240Pu activity in surface water was measured in the western North Sea, 66 mBq/m{sub 3}. In sea water, sub-surface maxima were observed at several locations with an 239,240Pu activity up to 160 mBq/m{sub 3}, and were related to Sellafield. With the exception to the North Sea, surface sediments reflected Pu from global fallout from weapons tests only. (author)

  2. Development of an automatic method for americium and plutonium separation and preconcentration using an multisyringe flow injection analysis-multipumping flow system. (United States)

    Fajardo, Yamila; Ferrer, Laura; Gómez, Enrique; Garcias, Francesca; Casas, Monserrat; Cerdà, Víctor


    A new procedure for automatic separation and preconcentration of 241Am and 239+240Pu from interfering matrixes using transuranide (TRU)-resin is proposed. Combination of the multisyringe flow injection analysis and multipumping flow system techniques with the TRU-resin allows carrying out the sampling treatment and separation in a short time using large sample volumes. Americium is eluted from the column with 4 mol L(-1) hydrochloric acid, and then plutonium is separated via on-column Pu(IV) reduction to Pu(III) with titanium(III) chloride. The corresponding alpha activities are measured off-line, with a relative standard deviation of 3% and a lower limit of detection of 0.004 Bq mL(-1), by using a multiplanchet low-background proportional counter.

  3. Recovery of Americium-241 from lightning rod by the method of chemical treatment; Recuperacion del Americio-241 provenientes de los pararrayos por el metodo de tratamiento quimico

    Energy Technology Data Exchange (ETDEWEB)

    Cruz, W.H., E-mail: [Instituto Peruano de Energia Nuclear (GRRA/IPEN), Lima (Peru). Division de Gestion de Residuos Radiactivos


    About 95% of the lightning rods installed in the Peruvian territory have set in their structures, pose small amounts of radioactive sources such as Americium-241 ({sup 241}Am), fewer and Radium 226 ({sup 226}Ra) these are alpha emitters and have a half life of 432 years and 1600 years respectively. In this paper describes the recovery of radioactive sources of {sup 241}Am radioactive lightning rods using the conventional chemical treatment method using agents and acids to break down the slides. The {sup 241}Am recovered was as excitation source and alpha particle generator for analysing samples by X Ray Fluorescence, for fixing the stainless steel {sup 241}Am technique was used electrodeposition. (author)

  4. Americium-241 Decorporation Model (United States)


    sources when combined with beryllium. Radioactive sources are used for a number of industrial applications that range from oil well logging any exposure resulting in a 50-year whole-body committed effective dose greater than 200 mSv (Rojas- Palma 2009). Therefore, the model can also...Tracheobronchial geometry: Human, dog, rat, hamster (Report LF-53). Lovelace Foundation, Albuquerque, NM Rojas- Palma C, et al. 2009. TMT Handbook

  5. Non-local exchange correlation functionals impact on the structural, electronic and optical properties of III-V arsenides

    KAUST Repository

    Anua, N. Najwa


    Exchange correlation (XC) energy functionals play a vital role in the efficiency of density functional theory (DFT) calculations, more soundly in the calculation of fundamental electronic energy bandgap. In the present DFT study of III-arsenides, we investigate the implications of XC-energy functional and corresponding potential on the structural, electronic and optical properties of XAs (X = B, Al, Ga, In). Firstly we report and discuss the optimized structural lattice parameters and the band gap calculations performed within different non-local XC functionals as implemented in the DFT-packages: WIEN2k, CASTEP and SIESTA. These packages are representative of the available code in ab initio studies. We employed the LDA, GGA-PBE, GGA-WC and mBJ-LDA using WIEN2k. In CASTEP, we employed the hybrid functional, sX-LDA. Furthermore LDA, GGA-PBE and meta-GGA were employed using SIESTA code. Our results point to GGA-WC as a more appropriate approximation for the calculations of structural parameters. However our electronic bandstructure calculations at the level of mBJ-LDA potential show considerable improvements over the other XC functionals, even the sX-LDA hybrid functional. We report also the optical properties within mBJ potential, which show a nice agreement with the experimental measurements in addition to other theoretical results. © 2013 IOP Publishing Ltd.

  6. A novel three-jet microreactor for localized metal-organic chemical vapour deposition of gallium arsenide: design and simulation (United States)

    Konakov, S. A.; Krzhizhanovskaya, V. V.


    We present a novel three-jet microreactor design for localized deposition of gallium arsenide (GaAs) by low-pressure Metal-Organic Chemical Vapour Deposition (MOCVD) for semiconductor devices, microelectronics and solar cells. Our approach is advantageous compared to the standard lithography and etching technology, since it preserves the nanostructure of the deposited material, it is less time-consuming and less expensive. We designed two versions of reactor geometry with a 10-micron central microchannel for precursor supply and with two side jets of a dilutant to control the deposition area. To aid future experiments, we performed computational modeling of a simplified-geometry (twodimensional axisymmetric) microreactor, based on Navier-Stokes equations for a laminar flow of chemically reacting gas mixture of Ga(CH3)3-AsH3-H2. Simulation results show that we can achieve a high-rate deposition (over 0.3 μm/min) on a small area (less than 30 μm diameter). This technology can be used in material production for microelectronics, optoelectronics, photovoltaics, solar cells, etc.

  7. Universal Heat Conduction in the Iron Arsenide Superconductor KFe2As2: Evidence of a d-Wave State

    Energy Technology Data Exchange (ETDEWEB)

    Reid, J.-Ph.; Tanatar, Makariy A.; Juneau-Fecteau, A.; Gordon, R.T.; Rene de Cotret, S.; Doiron-Leyraud, N.; Saito, T.; Fukazawa, H.; Kohori, Y.; Kihou, K.; Lee, C.H.; Iyo, A.; Eisaki, H.; Prozorov, Ruslan; Taillefer, Louis


    The thermal conductivity κ of the iron arsenide superconductor KFe2As2 was measured down to 50 mK for a heat current parallel and perpendicular to the tetragonal c axis. A residual linear term at T→0, κ0/T is observed for both current directions, confirming the presence of nodes in the superconducting gap. Our value of κ0/T in the plane is equal to that reported by Dong et al. [ Phys. Rev. Lett. 104 087005 (2010)] for a sample whose residual resistivity ρ0 was 10 times larger. This independence of κ0/T on impurity scattering is the signature of universal heat transport, a property of superconducting states with symmetry-imposed line nodes. This argues against an s-wave state with accidental nodes. It favors instead a d-wave state, an assignment consistent with five additional properties: the magnitude of the critical scattering rate Γc for suppressing Tc to zero; the magnitude of κ0/T, and its dependence on current direction and on magnetic field; the temperature dependence of κ(T).

  8. Gallium arsenide exposure impairs processing of particulate antigen by macrophages: modification of the antigen reverses the functional defect. (United States)

    Hartmann, Constance B; McCoy, Kathleen L


    Gallium arsenide (GaAs), a semiconductor used in the electronics industry, causes systemic immunosuppression in animals. The chemical's impact on macrophages to process the particulate antigen, sheep red blood cells (SRBC), for a T cell response in culture was examined after in vivo exposure of mice. GaAs-exposed splenic macrophages were defective in activating SRBC-primed lymph node T cells that could not be attributed to impaired phagocytosis. Modified forms of SRBC were generated to examine the compromised function of GaAs-exposed macrophages. SRBC were fixed to maintain their particulate nature and subsequently delipidated with detergent. Delipidation of intact SRBC was insufficient to restore normal antigen processing in GaAs-exposed macrophages. However, chemically exposed cells efficiently processed soluble sheep proteins. These findings suggest that the problem may lie in the release of sequestered sheep protein antigens, which then could be effectively cleaved to peptides. Furthermore, opsonization of SRBC with IgG compensated for the macrophage processing defect. The influence of signal transduction and phagocytosis via Fcgamma receptors on improved antigen processing could be dissociated. Immobilized anti-Fcgamma receptor antibody activated macrophages to secrete a chemokine, but did not enhance processing of unmodified SRBC by GaAs-exposed macrophages. Restoration of normal processing of particulate SRBC by chemically exposed macrophages involved phagocytosis through Fcgamma receptors. Hence, initial immune responses may be very sensitive to GaAs exposure, and the chemical's immunosuppression may be averted by opsonized particulate antigens.

  9. A final report for Gallium arsenide P-I-N detectors for high-sensitivity imaging of thermal neutrons

    CERN Document Server

    Vernon, S M


    This SBIR Phase I developed neutron detectors made FR-om gallium arsenide (GaAs) p-type/ intrinsic/n-type (P-I-N) diodes grown by metalorganic chemical vapor deposition (MOCVD) onto semi-insulating (S1) bulk GaAs wafers. A layer of isotonically enriched boron-10 evaporated onto the FR-ont surface serves to convert incoming neutrons into lithium ions and a 1.47 MeV alpha particle which creates electron-hole pairs that are detected by the GaAs diode. Various thicknesses of ''intrinsic'' (I) undoped GaAs were tested, as was use of a back-surface field (BSF) formed FR-om a layer of Al sub x Ga sub 1 sub - sub x As. Schottky-barrier diodes formed FR-om the same structures without the p+ GaAs top layer were tested as a comparison. After mesa etching and application of contacts, devices were tested in visible light before application of the boron coating. Internal quantum efficiency (IQE) of the best diode near the GaAs bandedge is over 90%. The lowest dark current measured is 1 x 10 sup - sup 1 sup 2 amps at -1 V o...

  10. Universal heat conduction in the iron arsenide superconductor KFe2As2: evidence of a d-wave state. (United States)

    Reid, J-Ph; Tanatar, M A; Juneau-Fecteau, A; Gordon, R T; de Cotret, S René; Doiron-Leyraud, N; Saito, T; Fukazawa, H; Kohori, Y; Kihou, K; Lee, C H; Iyo, A; Eisaki, H; Prozorov, R; Taillefer, Louis


    The thermal conductivity κ of the iron arsenide superconductor KFe2As2 was measured down to 50 mK for a heat current parallel and perpendicular to the tetragonal c axis. A residual linear term at T→0, κ(0)/T is observed for both current directions, confirming the presence of nodes in the superconducting gap. Our value of κ(0)/T in the plane is equal to that reported by Dong et al. [Phys. Rev. Lett. 104, 087005 (2010)] for a sample whose residual resistivity ρ(0) was 10 times larger. This independence of κ(0)/T on impurity scattering is the signature of universal heat transport, a property of superconducting states with symmetry-imposed line nodes. This argues against an s-wave state with accidental nodes. It favors instead a d-wave state, an assignment consistent with five additional properties: the magnitude of the critical scattering rate Γ(c) for suppressing T(c) to zero; the magnitude of κ(0)/T, and its dependence on current direction and on magnetic field; the temperature dependence of κ(T).

  11. The effect of hydrostatic pressure on the physical properties of magnesium arsenide in cubic and hexagonal phases (United States)

    Mokhtari, Ali; Sedighi, Matin


    Full potential-linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT) was applied to study the structural and electronic properties of the magnesium arsenide in both cubic and hexagonal phases. The exchange-correlation functional was approximated as a generalized gradient functional introduced by Perdew-Burke-Ernzerhof (GGA96) and Engel-Vosko (EV-GGA). The lattice parameters, bulk modulus and its pressure derivative, cohesive energy, band structures and effective mass of electrons and holes (EME and EMH) were obtained and compared to the available experimental and theoretical results. A phase transition was predicted at pressure of about 1.63 GPa from the cubic to the hexagonal phase. The effect of hydrostatic pressure on the behavior of the electronic properties such as band gap, valence bandwidths, anti-symmetry gap (the energy gap between two parts of the valence bands), EME and EMH were investigated using both GGA96 and EV-GGA methods. High applied pressure can decrease (increase) the holes mobility of cubic (hexagonal) phase of this compound.

  12. Development of a unique laboratory standard: Indium gallium arsenide detector for the 500-1700 nm spectral region (United States)


    A planar (5 mm diameter) indium gallium arsenide detector having a high (greater than 50 pct) quantum efficiency from the visible into the infrared spectrum (500 to 1700 nm) was fabricated. Quantum efficiencies as high as 37 pct at 510 nm, 58 pct at 820 nm and 62 pct at 1300 nm and 1550 nm were measured. A planar InP/InGaAs detector structure was also fabricated using vapor phase epitaxy to grow device structures with 0, 0.2, 0.4 and 0.6 micrometer thick InP caps. Quantum efficiency was studied as a function of cap thickness. Conventional detector structures were also used by completely etching off the InP cap after zinc diffusion. Calibrated quantum efficiencies were measured. Best results were obtained with devices whose caps were completely removed by etching. Certain problems still remain with these detectors including non-uniform shunt resistance, reproducibility, contact resistance and narrow band anti-reflection coatings.

  13. Actinide Oxidation State and O/M Ratio in Hypostoichiometric Uranium-Plutonium-Americium U0.750Pu0.246Am0.004O2-x Mixed Oxides. (United States)

    Vauchy, Romain; Belin, Renaud C; Robisson, Anne-Charlotte; Lebreton, Florent; Aufore, Laurence; Scheinost, Andreas C; Martin, Philippe M


    Innovative americium-bearing uranium-plutonium mixed oxides U1-yPuyO2-x are envisioned as nuclear fuel for sodium-cooled fast neutron reactors (SFRs). The oxygen-to-metal (O/M) ratio, directly related to the oxidation state of cations, affects many of the fuel properties. Thus, a thorough knowledge of its variation with the sintering conditions is essential. The aim of this work is to follow the oxidation state of uranium, plutonium, and americium, and so the O/M ratio, in U0.750Pu0.246Am0.004O2-x samples sintered for 4 h at 2023 K in various Ar + 5% H2 + z vpm H2O (z = ∼ 15, ∼ 90, and ∼ 200) gas mixtures. The O/M ratios were determined by gravimetry, XAS, and XRD and evidenced a partial oxidation of the samples at room temperature. Finally, by comparing XANES and EXAFS results to that of a previous study, we demonstrate that the presence of uranium does not influence the interactions between americium and plutonium and that the differences in the O/M ratio between the investigated conditions is controlled by the reduction of plutonium. We also discuss the role of the homogeneity of cation distribution, as determined by EPMA, on the mechanisms involved in the reduction process.

  14. LiCa₃As₂H and Ca₁₄As₆X₇ (X = C, H, N): two new arsenide hydride phases grown from Ca/Li metal flux. (United States)

    Blankenship, Trevor V; Wang, Xiaoping; Hoffmann, Christina; Latturner, Susan E


    The reaction of arsenic with sources of light elements in a Ca/Li melt leads to the formation of two new arsenide hydride phases. The predominant phase Ca14As6X7 (X = C(4-), N(3-), H(-)) exhibits a new tetragonal structure type in the space group P4/mbm (a = 15.749(1) Å, c = 9.1062(9) Å, Z = 4, R1 = 0.0150). The minor phase LiCa3As2H also has a new structure type in the orthorhombic space group Pnma (a = 11.4064(7) Å, b = 4.2702(3) Å, c = 11.8762(8)Å, Z = 4, R1 = 0.0135). Both phases feature hydride and arsenide anions separated by calcium cations. The red color of these compounds indicates they should be charge-balanced. DOS calculations on LiCa3As2H confirm a band gap of 1.4 eV; UV-vis spectroscopy on Ca14As6X7 shows a band gap of 1.6 eV. Single-crystal neutron diffraction studies were necessary to determine the mixed occupancy of carbon, nitrogen, and hydrogen anions on the six light-element sites in Ca14As6X7; these data indicated an overall stoichiometry of Ca14As6C(0.445)N(1.135)H(4.915).

  15. Study of biosorbents application on the treatment of radioactive liquid wastes with americium-241; Estudo da aplicacao de biossorventes no tratamento de rejeitos radioativos liquidos contendo americio-241

    Energy Technology Data Exchange (ETDEWEB)

    Borba, Tania Regina de


    The use of nuclear energy for many different purposes has been intensified and highlighted by the benefits that it provides. Medical diagnosis and therapy, agriculture, industry and electricity generation are examples of its application. However, nuclear energy generates radioactive wastes that require suitable treatment ensuring life and environmental safety. Biosorption and bioaccumulation represent an emergent alternative for the treatment of radioactive liquid wastes, providing volume reduction and physical state change. This work aimed to study biosorbents for the treatment of radioactive liquid wastes contaminated with americium-241 in order to reduce the volume and change the physical state from liquid to solid. The biosorbents evaluated were Saccharomyces cerevisiae immobilized in calcium alginate beads, inactivated and free cells of Saccharomyces cerevisiae, calcium alginate beads, Bacillus subtilis, Cupriavidus metallidurans and Ochrobactrum anthropi. The results were quite satisfactory, achieving 100% in some cases. The technique presented in this work may be useful and viable for implementing at the Waste Management Laboratory of IPEN - CNEN/SP in short term, since it is an easy and low cost method. (author)

  16. Human bones obtained from routine joint replacement surgery as a tool for studies of plutonium, americium and {sup 90}Sr body-burden in general public

    Energy Technology Data Exchange (ETDEWEB)

    Mietelski, Jerzy W., E-mail: [Henryk Niewodniczanski Institute of Nuclear Physics, Polish Academy of Sciences, Radzikowskiego 152, 31-342 Cracow (Poland); Golec, Edward B. [Traumatology and Orthopaedic Clinic, 5th Military Clinical Hospital and Polyclinic, Independent Public Healthcare Facility, Wroclawska 1-3, 30-901 Cracow (Poland); Orthopaedic Rehabilitation Department, Chair of Clinical Rehabilitation, Faculty of Motor of the Bronislaw Czech' s Academy of Physical Education, Cracow (Poland); Department of Physical Therapy Basics, Faculty of Physical Therapy, Administration College, Bielsko-Biala (Poland); Tomankiewicz, Ewa [Henryk Niewodniczanski Institute of Nuclear Physics, Polish Academy of Sciences, Radzikowskiego 152, 31-342 Cracow (Poland); Golec, Joanna [Orthopaedic Rehabilitation Department, Chair of Clinical Rehabilitation, Faculty of Motor of the Bronislaw Czech' s Academy of Physical Education, Cracow (Poland); Physical Therapy Department, Institute of Physical Therapy, Faculty of Heath Science, Jagiellonian University, Medical College, Cracow (Poland); Nowak, Sebastian [Traumatology and Orthopaedic Clinic, 5th Military Clinical Hospital and Polyclinic, Independent Public Healthcare Facility, Wroclawska 1-3, 30-901 Cracow (Poland); Orthopaedic Rehabilitation Department, Chair of Clinical Rehabilitation, Faculty of Motor of the Bronislaw Czech' s Academy of Physical Education, Cracow (Poland); Szczygiel, Elzbieta [Physical Therapy Department, Institute of Physical Therapy, Faculty of Heath Science, Jagiellonian University, Medical College, Cracow (Poland); Brudecki, Kamil [Henryk Niewodniczanski Institute of Nuclear Physics, Polish Academy of Sciences, Radzikowskiego 152, 31-342 Cracow (Poland)


    The paper presents a new sampling method for studying in-body radioactive contamination by bone-seeking radionuclides such as {sup 90}Sr, {sup 239+240}Pu, {sup 238}Pu, {sup 241}Am and selected gamma-emitters, in human bones. The presented results were obtained for samples retrieved from routine surgeries, namely knee or hip joints replacements with implants, performed on individuals from Southern Poland. This allowed to collect representative sets of general public samples. The applied analytical radiochemical procedure for bone matrix is described in details. Due to low concentrations of {sup 238}Pu the ratio of Pu isotopes which might be used for Pu source identification is obtained only as upper limits other then global fallout (for example Chernobyl) origin of Pu. Calculated concentrations of radioisotopes are comparable to the existing data from post-mortem studies on human bones retrieved from autopsy or exhumations. Human bones removed during knee or hip joint surgery provide a simple and ethical way for obtaining samples for plutonium, americium and {sup 90}Sr in-body contamination studies in general public. - Highlights: > Surgery for joint replacement as novel sampling method for studying in-body radioactive contamination. > Proposed way of sampling is not causing ethic doubts. > It is a convenient way of collecting human bone samples from global population. > The applied analytical radiochemical procedure for bone matrix is described in details. > The opposite patient age correlations trends were found for 90Sr (negative) and Pu, Am (positive).

  17. The construction of TRIGA-TRAP and direct high-precision Penning trap mass measurements on rare-earth elements and americium

    Energy Technology Data Exchange (ETDEWEB)

    Ketelaer, Jens


    The construction of TRIGA-TRAP and direct high-precision Penning trap mass measurements on rare-earth elements and americium: Nuclear masses are an important quantity to study nuclear structure since they reflect the sum of all nucleonic interactions. Many experimental possibilities exist to precisely measure masses, out of which the Penning trap is the tool to reach the highest precision. Moreover, absolute mass measurements can be performed using carbon, the atomic-mass standard, as a reference. The new double-Penning trap mass spectrometer TRIGA-TRAP has been installed and commissioned within this thesis work, which is the very first experimental setup of this kind located at a nuclear reactor. New technical developments have been carried out such as a reliable non-resonant laser ablation ion source for the production of carbon cluster ions and are still continued, like a non-destructive ion detection technique for single-ion measurements. Neutron-rich fission products will be available by the reactor that are important for nuclear astrophysics, especially the r-process. Prior to the on-line coupling to the reactor, TRIGA-TRAP already performed off-line mass measurements on stable and long-lived isotopes and will continue this program. The main focus within this thesis was on certain rare-earth nuclides in the well-established region of deformation around N {proportional_to} 90. Another field of interest are mass measurements on actinoids to test mass models and to provide direct links to the mass standard. Within this thesis, the mass of {sup 241}Am could be measured directly for the first time. (orig.)

  18. Superconductivity in Ti-doped iron-arsenide compound Sr4Cr0.8Ti1.2O6Fe2As2

    Institute of Scientific and Technical Information of China (English)


    Superconductivity was achieved in Ti-doped iron-arsenide compound Sr4Cr0.8Ti1.2O6Fe2As2 (abbreviated as Cr-FeAs-42622). The X-ray diffraction measurement shows that this material has a layered structure with the space group of P4/nmm,and with the lattice constants a = b = 3.9003  and c = 15.8376 . Clear diamagnetic signals in ac susceptibility data and zero-resistance in resistivity data were detected at about 6 K,confirming the occurrence of bulk superconductivity. Meanwhile we observed a supercon-ducting transition in the resistive data with the onset transition temperature at 29.2 K,which may be induced by the nonuniform distribution of the Cr/Ti content in the FeAs-42622 phase.

  19. One watt gallium arsenide class-E power amplifier with a thin-film bulk acoustic resonator filter embedded in the output network

    Directory of Open Access Journals (Sweden)

    Kyle Holzer


    Full Text Available Integration of a class-E power amplifier (PA and a thin-film bulk acoustic wave resonator (FBAR filter is shown to provide high power added efficiency in addition to superior out-of-band spectrum suppression. A discrete gallium arsenide pseudomorphic high-electron-mobility transistor is implemented to operate as a class-E amplifier from 2496 to 2690 MHz. The ACPF7041 compact bandpass FBAR filter is incorporated to replace the resonant LC tank in a traditional class-E PA. To reduce drain voltage stress, the supply choke is replaced by a finite inductance. The fabricated PA provides up to 1 W of output power with a peak power added efficiency (PAE of 58%. The improved out-of-band spectrum filtering is compared to a traditional class-E with discrete LC resonant filtering. Such PAs can be combined with linearisation techniques to reduce out-of-band emissions.

  20. Indium Arsenide Nanowires

    DEFF Research Database (Denmark)

    Madsen, Morten Hannibal

    -ray diffraction is performed with a MBE system attached to a synchrotron beam line. The evolution in crystal structure is monitored for different growth conditions and can be correlated to post growth analysis in TEM. This type of studies gives much more detailed information on formation of the crystal structure......This thesis is about growth of Au-assisted and self-assisted InAs nanowires (NWs). The wires are synthesized using a solid source molecular beam epitaxy (MBE) system and characterized with several techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM) and x...... by a systematic study to optimize the growth conditions; first the Au deposition, then the growth temperature and finally the beam fluxes. For further control of the growth, Au droplets have been positioned with electron beam lithography and large scale arrays with a > 99 % yield have been made on 2 inch...

  1. EURADOS action for determination of americium in skull measures in vivo and Monte Carlo simulation; Accion EURADOS para la determinacion de americio en craneo mediante medidas in-vivo y simulacion Monte Carlo

    Energy Technology Data Exchange (ETDEWEB)

    Lopez Ponte, M. A.; Navarro Amaro, J. F.; Perez Lopez, B.; Navarro Bravo, T.; Nogueira, P.; Vrba, T.


    From the Group of WG7 internal dosimetry of the EURADOS Organization (European Radiation Dosimetry group, e.V.) which It coordinates CIEMAT, international action for the vivo measurement of americium has been conducted in three mannequins type skull with detectors of Germanium by gamma spectrometry and simulation by Monte Carlo methods. Such action has been raised as two separate exercises, with the participation of institutions in Europe, America and Asia. Other actions similar precede this vivo intercomparison of measurement and modeling Monte Carlo1. The preliminary results and associated findings are presented in this work. The laboratory of the body radioactivity (CRC) of service counter of dosimetry staff internal (DPI) of the CIEMAT, it has been one of the participants in vivo measures exercise. On the other hand part, the Group of numerical dosimetry of CIEMAT is participant of the Monte Carlo2 simulation exercise. (Author)

  2. Analysis of radiation-damaged and annealed gallium arsenide and indium phosphide solar cells using deep-level transient spectroscopy techniques. Master's thesis

    Energy Technology Data Exchange (ETDEWEB)

    Pinzon, D.


    Degradation of solar cell performance from radiation damage was found to be reversed through annealing processes. The mechanisms behind the degradation and recovery is based on deep-level traps, or defects, in the lattice structure of the solar cell. Through a process known as Deep Level Transient Spectroscopy (DLTS), a correlation can be made between damage/recovery and trap energy level/concentration of the cell. Gallium Arsenide (GaAs) and Indium Phosphide (InP) solar cells were subjected to 1 MeV electron irradiation by a Dynamitron linear acceleration at two fluence levels of 1E1r and 1E15 electrons/cm sq. The process of annealing included thermal annealing at 90 c with forward bias current and thermal annealing alone for (GaAs). After each cycle, DLTS measurements were taken to determine the energy level of the traps and their concentration. Multiple cycles of irradiation, annealing and DLTS were performed to observe the correlation between degradation and recovery to trap energy level and concentration. The results show that the lower energy level traps are associated with the recovery of the cells while the higher level traps are associated with the overall permanent degradation of the cells.

  3. The effect of gallium arsenide aluminum laser therapy in the management of cervical myofascial pain syndrome: a double blind, placebo-controlled study. (United States)

    Dundar, U; Evcik, D; Samli, F; Pusak, H; Kavuncu, V


    The efficacy of low-level laser therapy (LLLT) in myofascial pain syndrome (MPS) seems controversial. A prospective, double-blind, randomized controlled trial was conducted in patients with chronic MPS in the neck to evaluate the effects of low-level 830-nm gallium arsenide aluminum (Ga-As-Al) laser therapy. The study group consisted of 64 MPS patients. The patients were randomly assigned into two groups. In group 1 (n = 32), Ga-As-Al laser treatment was applied over three trigger points bilaterally for 2 min over each point once a day for 15 days during a period of 3 weeks. In group 2 (n = 32), the same treatment protocol was given, but the laser instrument was switched off during applications. All patients in both groups performed daily isometric exercise and stretching exercises for cervical region. Parameters were measured at baseline and after 4 weeks. All patients were evaluated with respect to pain (at rest, movement, and night) and assessed by visual analog scale, measurement of active range of motion using an inclinometer and a goniometer, and the neck disability index. In both groups, statistically significant improvements were detected in all outcome measures compared with baseline (p 0.05). In conclusion, although the laser therapy has no superiority over placebo groups in this study, we cannot exclude the possibility of effectivity with another treatment regimen including different laser wavelengths and dosages (different intensity and density and/or treatment interval).

  4. Americium behaviour in plastic vessels

    Energy Technology Data Exchange (ETDEWEB)

    Legarda, F.; Herranz, M. [Departamento de Ingenieria Nuclear y Mecanica de Fluidos, Escuela Tecnica Superior de Ingenieria de Bilbao, Universidad del Pais Vasco (UPV/EHU), Alameda de Urquijo s/n, 48013 Bilbao (Spain); Idoeta, R., E-mail: raquel.idoeta@ehu.e [Departamento de Ingenieria Nuclear y Mecanica de Fluidos, Escuela Tecnica Superior de Ingenieria de Bilbao, Universidad del Pais Vasco (UPV/EHU), Alameda de Urquijo s/n, 48013 Bilbao (Spain); Abelairas, A. [Departamento de Ingenieria Nuclear y Mecanica de Fluidos, Escuela Tecnica Superior de Ingenieria de Bilbao, Universidad del Pais Vasco (UPV/EHU), Alameda de Urquijo s/n, 48013 Bilbao (Spain)


    The adsorption of {sup 241}Am dissolved in water in different plastic storage vessels was determined. Three different plastics were investigated with natural and distilled waters and the retention of {sup 241}Am by these plastics was studied. The same was done by varying vessel agitation time, vessel agitation speed, surface/volume ratio of water in the vessels and water pH. Adsorptions were measured to be between 0% and 70%. The adsorption of {sup 241}Am is minimized with no water agitation, with PET or PVC plastics, and by water acidification.

  5. Selectivity of bis-triazinyl bipyridine ligands for americium(III) in Am/Eu separation by solvent extraction. Part 1. Quantum mechanical study on the structures of BTBP complexes and on the energy of the separation. (United States)

    Narbutt, Jerzy; Oziminski, Wojciech P


    Theoretical studies were carried out on two pairs of americium and europium complexes formed by tetra-N-dentate lipophilic BTBP ligands, neutral [ML(NO(3))(3)] and cationic [ML(2)](3+) where M = Am(III) or Eu(III), and L = 6,6'-bis-(5,6-diethyl-1,2,4-triazin-3-yl)-2,2'-bipyridine (C2-BTBP). Molecular structures of the complexes have been optimized at the B3LYP/6-31G(d) level and total energies of the complexes in various media were estimated using single point calculations performed at the B3LYP/6-311G(d,p) and MP2/6-311G(d,p) levels of theory. In the calculations americium and europium ions were treated using pseudo-relativistic Stuttgart-Dresden effective core potentials and the accompanying basis sets. Selectivity in solvent extraction separation of two metal ions is a co-operative function of contributions from all extractable metal complexes, which depend on physico-chemical properties of each individual complex and on its relative amount in the system. Semi-quantitative analysis of BTBP selectivity in the Am/Eu separation process, based on the contributions from the two pairs of Am(III) and Eu(III) complexes, has been carried out. To calculate the energy of Am/Eu separation, a model of the extraction process was used, consisting of complex formation in water and transfer of the formed complex to the organic phase. Under the assumptions discussed in the paper, this simple two-step model results in reliable values of the calculated differences in the energy changes for each pair of the Am/Eu complexes in both steps of the process. The greater thermodynamic stability (in water) of the Am-BTBP complexes, as compared with the analogous Eu species, caused by greater covalency of the Am-N than Eu-N bonds, is most likely the main reason for BTBP selectivity in the separation of the two metal ions. The other potential reason, i.e. differences in lipophilic properties of the analogous complexes of Am and Eu, is less important with regard to this selectivity.

  6. NTP Toxicology and Carcinogenesis Studies of Gallium Arsenide (CAS No. 1303-00-0) in F344/N Rats and B6C3F1 Mice (Inhalation Studies). (United States)


    Gallium arsenide is used primarily to make light- emitting diodes, lasers, laser windows, and photodetectors and in the photoelectronic transmission of data through optical fibers. Gallium arsenide was nominated for study because of its widespread use in the microelectronics industry, the potential for worker exposure, and the absence of chronic toxicity data. Male and female F344/N rats and B6C3F1 mice were exposed to gallium arsenide particles (greater than 98% pure; mass median aerodynamic diameter = 0.8 to 1.0 &mgr;m) by inhalation for 16 days, 14 weeks, or 2 years. Genetic toxicology studies were conducted in Salmonella typhimurium, and the frequency of micronuclei was determined in the peripheral blood of mice exposed to gallium arsenide for 14 weeks. 16-DAY STUDY IN RATS: Groups of five male and five female rats were exposed to particulate aerosols of gallium arsenide with a mass median aerodynamic diameter of approximately 1 &mgr;m at concentrations of 0, 1, 10, 37, 75, or 150 mg/m(3) by inhalation, 6 hours per day, 5 days per week, for 16 days. All rats survived to the end of the study. The final mean body weights of all exposed groups of males and females were similar to those of the chamber controls. Compared to chamber controls, the liver and lung weights of males exposed to 1 mg/m(3) or greater and females exposed to 10 mg/m(3) or greater were increased; the thymus weights of all exposed groups of males were decreased. Gallium arsenide particles were visible in the alveolar spaces and, to a lesser extent, within alveolar macrophages of exposed rats. Moderate proteinosis (surfactant mixed with small amounts of fibrin) and minimal histiocytic cellular infiltrate were observed in the alveoli of exposed males and females. Epithelial hyperplasia and squamous metaplasia of the larynx were observed primarily in males exposed to 150 mg/m(3). 16-DAY STUDY IN MICE: Groups of five male and four or five female mice were exposed to particulate aerosols of gallium

  7. Sub-Half Micrometer Gate Lift-Off By Three Layer Resist Process Via Electron Beam Lithography For Gallium Arsenide Monolithic Microwave Integrated Circuits (MIMICs) (United States)

    Nagarajan, Rao M.; Rask, Steven D.; King, Michael R.; Yard, Thomas K.


    A three layer resist process for gate lift-oft on Gallium Arsenide MIMICs by electron Dean and optical lithographies are described. The electron beam lithography process consists of Poly (Dimethyl Glutarimide) PMGI as tne planarizing layer, a Plasma Enhanced Chemical Vapour Deposition silicon nitride (SiN) as an intermediate barrier layer and Poly (Methyl methacrylate), PMMA, as the top imaging layer. The PivimA is exposed by Cambridge Electron beam system EBMF 6.4 at 20kev and developed in Methyl Ethyl Ketone/Iso Propyl Alcohol. The pattern is then transferred to the SiN layer by cF4/o2 plasma etcning. The SiN layer is then used as the mask to transfer the pattern to the PMGI layer by 02 kteactive Ion Etching until tne GaAS is exposed. The various processing parameters are optimized to obtain lip or overnang suitable for lift-off with 0.20μm gate dimension. After the GaAS has been recessed (to reduce the parasitic source resistance), a thick 9000Å Ti/Pt/Au gate metal is evaporated and the unwanted gate metal is lifted oft using PMGI stripper. To use the three layer resist process in optical litnograpny, the MG.'. planarizing layer and PECVD SiN layer is used along with optical pnotoresist AZ1450J as a top imaging layer. inc sofcbake, uV exposure dose (436 nm) and development time for AZ145UJ are optimized to obtain 0.5μm to 1.0μm gate dimensions. The etch parameters for the pattern transfer to SiN and tnen to PMGI layers are same as in tne above process. The process levels such as mesa, source/drain, contact and metal levels for GaAs mlivilt,s are defined by UV lithography (Karl Suss contact aligner) using single layer pnotoresist. A nign overlay accuracy is obtained by use of gold metal Dumps as registration marks for aligning tne electron Dean exposed gate to optically exposed source/drain channel. Thus a higher tnrougnput and better linewidtn control are obtained using electron beam/optical lithography tecnniques. This approach is currently used to

  8. Use of radioanalytical methods for determination of uranium, neptunium, plutonium, americium and curium isotopes in radioactive wastes; Utilizacao de metodos radioanaliticos para a determinacao de isotopos de uranio, plutonio, americio e curio em rejeitos radioativos

    Energy Technology Data Exchange (ETDEWEB)

    Geraldo, Bianca


    Activated charcoal is a common type of radioactive waste that contains high concentrations of fission and activation products. The management of this waste includes its characterization aiming the determination and quantification of the specific radionuclides including those known as Difficult-to-Measure Radionuclides (RDM). The analysis of the RDM's generally involves complex radiochemical analysis for purification and separation of the radionuclides, which are expensive and time-consuming. The objective of this work was to define a methodology for sequential analysis of the isotopes of uranium, neptunium, plutonium, americium and curium present in a type of radioactive waste, evaluating chemical yield, analysis of time spent, amount of secondary waste generated and cost. Three methodologies were compared and validated that employ ion exchange (TI + EC), extraction chromatography (EC) and extraction with polymers (ECP). The waste chosen was the activated charcoal from the purification system of primary circuit water cooling the reactor IEA-R1. The charcoal samples were dissolved by acid digestion followed by purification and separation of isotopes with ion exchange resins, extraction and chromatographic extraction polymers. Isotopes were analyzed on an alpha spectrometer, equipped with surface barrier detectors. The chemical yields were satisfactory for the methods TI + EC and EC. ECP method was comparable with those methods only for uranium. Statistical analysis as well the analysis of time spent, amount of secondary waste generated and cost revealed that EC method is the most effective for identifying and quantifying U, Np, Pu, Am and Cm present in charcoal. (author)

  9. (121,123)Sb and (75)As NMR and NQR investigation of the tetrahedrite (Cu12Sb4S13)--Tennantite (Cu12As4S13) system and other metal arsenides. (United States)

    Bastow, T J; Lehmann-Horn, J A; Miljak, D G


    This work is motivated by the recent developments in online minerals analysis in the mining and minerals processing industry via nuclear quadrupole resonance (NQR). Here we describe a nuclear magnetic resonance (NMR) and NQR study of the minerals tennantite (Cu12As4S13) and tetrahedrite (Cu12 Sb4S13). In the first part NQR lines associated with (75)As in tennantite and (121,123)Sb isotopes in tetrahedrite are reported. The spectroscopy has been restricted to an ambient temperature studies in accord with typical industrial conditions. The second part of this contribution reports nuclear quadrupole-perturbed NMR findings on further, only partially characterised, metal arsenides. The findings enhance the detection capabilities of NQR based analysers for online measurement applications and may aid to control arsenic and antimony concentrations in metal processing stages.

  10. Wet chemical functionalization of III-V semiconductor surfaces: alkylation of gallium arsenide and gallium nitride by a Grignard reaction sequence. (United States)

    Peczonczyk, Sabrina L; Mukherjee, Jhindan; Carim, Azhar I; Maldonado, Stephen


    Crystalline gallium arsenide (GaAs) (111)A and gallium nitride (GaN) (0001) surfaces have been functionalized with alkyl groups via a sequential wet chemical chlorine activation, Grignard reaction process. For GaAs(111)A, etching in HCl in diethyl ether effected both oxide removal and surface-bound Cl. X-ray photoelectron (XP) spectra demonstrated selective surface chlorination after exposure to 2 M HCl in diethyl ether for freshly etched GaAs(111)A but not GaAs(111)B surfaces. GaN(0001) surfaces exposed to PCl(5) in chlorobenzene showed reproducible XP spectroscopic evidence for Cl-termination. The Cl-activated GaAs(111)A and GaN(0001) surfaces were both reactive toward alkyl Grignard reagents, with pronounced decreases in detectable Cl signal as measured by XP spectroscopy. Sessile contact angle measurements between water and GaAs(111)A interfaces after various levels of treatment showed that GaAs(111)A surfaces became significantly more hydrophobic following reaction with C(n)H(2n-1)MgCl (n = 1, 2, 4, 8, 14, 18). High-resolution As 3d XP spectra taken at various times during prolonged direct exposure to ambient lab air indicated that the resistance of GaAs(111)A to surface oxidation was greatly enhanced after reaction with Grignard reagents. GaAs(111)A surfaces terminated with C(18)H(37) groups were also used in Schottky heterojunctions with Hg. These heterojunctions exhibited better stability over repeated cycling than heterojunctions based on GaAs(111)A modified with C(18)H(37)S groups. Raman spectra were separately collected that suggested electronic passivation by surficial Ga-C bonds at GaAs(111)A. Specifically, GaAs(111)A surfaces reacted with alkyl Grignard reagents exhibited Raman signatures comparable to those of samples treated with 10% Na(2)S in tert-butanol. For GaN(0001), high-resolution C 1s spectra exhibited the characteristic low binding energy shoulder demonstrative of surface Ga-C bonds following reaction with CH(3)MgCl. In addition, 4

  11. Barium iron arsenide, barium cobalt arsenide, barium nickel arsenide single crystals and superconductivity upon cobalt doping

    Energy Technology Data Exchange (ETDEWEB)

    Ronning, Filip [Los Alamos National Laboratory; Sefat, A S [ORNL; Mcguire, M M [ORNL; Sales, B [ORNL; Jin, R [ORNL; Mandrus, D [ORNL


    The crystal structure and physical properties of BaFe{sub 2}As{sub 2}, BaCo{sub 2}As{sub 2}, and BaNi{sub 2}As{sub 2} single crystals are surveyed. BaFe{sub 2}As{sub 2} gives a magnetic and structural transition at T{sub N} = 132(1) K, BaCo{sub 2}As{sub 2} is a paramagnetic metal, while BaNi{sub 2}As{sub 2} has a structural phase transition at T{sub 0} = 131 K, followed by superconductivity below {Tc} = 0.69 K. The bulk superconductivity in Co-doped BaFe{sub 2}As{sub 2} below {Tc} = 22 K is demonstrated by resistivity, magnetic susceptibility, and specific heat data. In contrast to the cuprates, the Fe-based system appears to tolerate considerable disorder in the transition metal layers. First principles calculations for BaFe{sub 1.84}Co{sub 0.16}As{sub 2} inter-band scattering due to Co is weak.

  12. Evolution of magnetic and superconducting phases with doping and pressure in the underdoped iron-arsenide superconductor Ba{sub 1-x}K{sub x}Fe{sub 2}As{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Hassinger, Elena [Universite de Sherbrooke, Quebec (Canada); Canadian Institute for Advanced Research, Toronto, Ontario (Canada); Max Planck Institut fuer Chemische Physik fester Stoffe, Dresden (Germany); Gredat, Gregory; Valade, Fabrice; Rene de Cotret, Samuel; Juneau-Fecteau, Alexandre; Reid, Jean-Philippe; Doiron-Leyraud, Nicolas [Universite de Sherbrooke, Quebec (Canada); Kim, H.; Tanatar, Makariy A.; Prozorov, Ruslan [Ames Laboratory, Ames, Iowa (United States); Shen, B.; Wen, H.H. [Nanjing University (China); Taillefer, Louis [Universite de Sherbrooke, Quebec (Canada); Canadian Institute for Advanced Research, Toronto, Ontario (Canada)


    The electrical resistivity ρ of the iron-arsenide superconductor Ba{sub 1-x}K{sub x}Fe{sub 2}As{sub 2} was measured in applied pressures up to 2.75 GPa for seven underdoped samples. Six of them are antiferromagnetic at P = 0 with 0.16 < x < 0.24 and one is non-magnetic with x = 0.26. The stripe-like antiferromagnetic ordering temperature T{sub N}, detected as a sharp anomaly in ρ(T), decreases linearly with pressure. For every magnetic sample a second phase appears with pressure at a lower temperature T{sub 0}, which rises with pressure. The critical pressure above which this phase appears decreases with doping going to zero for x = 0.24 just below the critical doping for the magnetic phase. This behaviour is reminiscent of the second magnetic phase appearing in Ba{sub 0.76}Na{sub 0.24}Fe{sub 2}As{sub 2} where the tetragonal symmetry is restored in favour of the scenario in which the nematic order in the iron pnictides is of magnetic origin.

  13. Elastic properties and inter-atomic bonding in layered Fe-Cu arsenide oxide Sr{sub 2}Fe{sub 2}CuAs{sub 2}O{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Shein, Igor R.; Bannikov, Vyacheslav V.; Ivanovskii, Alexander L. [Institute of Solid State Chemistry, Ural Branch of the Russian Academy of Sciences, Ekaterinburg (Russian Federation)


    Inspired by recent discovery of the layered five-component phase - the tetragonal arsenide oxide Sr{sub 2}Fe{sub 2}CuAs{sub 2}O{sub 2} uniting two types of [Fe{sub 2}As{sub 2}] and [CuO{sub 2}] blocks, which are the main building blocks inherent in two basic families of high-T{sub C} superconductors: so-called cuprates and iron-pnictides, we used the first principles calculations to predict the elastic properties and to find their interplay with inter-atomic bonding for this unique system. Our data reveal that the examined phase is a relatively soft material; the predicted bulk and shear modules are about 90 and 54 GPa, respectively. Besides, this system is mechanically stable, adopts considerable elastic anisotropy, and should demonstrate brittleness. These conclusions agree with the bonding picture for Sr{sub 2}Fe{sub 2}CuAs{sub 2}O{sub 2}, according to which the inter-atomic bonding in this system is highly anisotropic and includes ionic, covalent, and metallic contributions, where inside [Fe{sub 2}As{sub 2}] and [CuO{sub 2}] blocks covalent-ionic Fe-As, Cu-O and metallic-like Fe-Fe bonds take place, whereas inter-blocks bonding is basically of the ionic type. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Delocalization and new phase in Americium: theory

    Energy Technology Data Exchange (ETDEWEB)

    Soderlind, P


    Density-functional electronic structure calculations have been used to investigate the high pressure behavior of Am. At about 80 kbar (8 GPa) calculations reveal a monoclinic phase similar to the ground state structure of plutonium ({alpha}-Pu). The experimentally suggested {alpha}-U structure is found to be substantially higher in energy. The phase transition from fcc to the low symmetry structure is shown to originate from a drastic change in the nature of the electronic structure induced by the elevated pressure. A calculated volume collapse of about 25% is associated with the transition. For the low density phase, an orbital polarization correction to the local spin density (LSD) theory was applied. Gradient terms of the electron density were included in the calculation of the exchange/correlation energy and potential, according to the generalized gradient approximation (GGA). The results are consistent with a Mott transition; the 5f electrons are delocalized and bonding on the high density side of the transition and chemically inert and non-bonding (localized) on the other. Theory compares rather well with recent experimental data which implies that electron correlation effects are reasonably modeled in our orbital polarization scheme.

  15. The proliferation potential of neptunium and americium

    Energy Technology Data Exchange (ETDEWEB)

    An, J. S.; Shin, J. S.; Kim, J. S.; Kwack, E. H.; Kim, B. K


    It is recognized that some trans-uranic elements other than plutonium, in particular Np and Am, if will be available in sufficient quantities, could be used for nuclear explosive devices. The spent fuel has been accumulating in number of nuclear power plant and operation of large scale commercial reprocessing plants. However, these materials are not covered by the definition of special fissionable material in the Agency Statute. At the time when the Statute was adopted, the availability of meaningful quantities of separated Np and Am was remote and they were not included in the definition of special fissionable material. Then, IAEA Board decided a measure for control of Np and Am on September 1999. This report contains the control method and the characteristic of Np and Am for using domestic nuclear industries, and it can be useful for understanding how to report and account of Np and Am. (author)

  16. Evaluation of neutron data for americium-241

    Energy Technology Data Exchange (ETDEWEB)

    Maslov, V.M.; Sukhovitskij, E.Sh.; Porodzinskij, Yu.V.; Klepatskij, A.B.; Morogovskij, G.B. [Radiation Physics and Chemistry Problems Inst., Minsk-Sosny (Belarus)


    The evaluation of neutron data for {sup 241}Am is made in the energy region from 10{sup -5} eV up to 20 MeV. The results of the evaluation are compiled in the ENDF/B-VI format. This work is performed under the Project Agreement CIS-03-95 with the International Science and Technology Center (Moscow). The Financing Party for the Project is Japan. The evaluation was requested by Y. Kikuchi (JAERI). (author). 60 refs.

  17. Iron arsenides with three-dimensional FeAs layer networks: Can(n+1)/2(Fe1-xPtx)(2+3n)Ptn(n-1)/2As(n+1)(n+2)/2 (n=2, 3)

    Energy Technology Data Exchange (ETDEWEB)

    Katayama, Naoyuki; Onari, Seiichiro; Matsubayashi, Kazuyuki; Uwatoko, Yoshiya; Sawa, Hiroshi


    We report the comprehensive studies between synchrotron X-ray diffraction, electrical resistivity and magnetic susceptibility experiments for the iron arsenides Can(n+1)/2(Fe1-xPtx)(2+3n)Ptn(n -1)/2As(n+1)(n+2)/2 for n=2 and 3. Both structures crystallize in the monoclinic space group P21/m (#11) with three-dimensional FeAs structures. The horizontal FeAs layers are bridged by inclined FeAs planes through edge-sharing FeAs5 square pyramids, resulting in triangular tunneling structures rather than the simple layered structures found in conventional iron arsenides. n=3 system shows a sign of superconductivity with a small volume fraction. Our first-principles calculations of these systems clearly indicate that the Fermi surfaces originate from strong Fe-3d characters and the three-dimensional nature of the electric structures for both systems, thus offering the playgrounds to study the effects of dimensionality on high Tc superconductivity.

  18. 负电子亲和势砷化镓光阴极热发射度测量%Thermal Emittance Measurement of Negative Electron Affinity Gallium Arsenide Photocathode

    Institute of Scientific and Technical Information of China (English)

    吴岱; 潘清; 肖德鑫; 李凯; 杨仁俊; 王建新; 张海旸


    作为未来高平均功率、高亮度电子源的重要材料之一,负电子亲和势砷化镓(NEA‐GaAs)光阴极发射的电子束亮度一直以来都是国际上的研究热点。热发射度是电子束能够实现的发射度下限,测量热发射度有利于确定注入器能否提供高亮度的电子束。本文理论计算了 NEA‐GaAs光阴极热发射度数值范围,并基于中国工程物理研究院自由电子激光相干强太赫兹源(FEL‐T Hz )装置,在28 fC的极低电荷量下,采用螺线管扫描法初步测量了NEA‐GaAs光阴极的热发射度。结果显示,NEA‐GaAs光阴极的热发射度为(0.603±0.002)μm/m m。%As one of the most important high average power electron source materials , the high brightness negative electron affinity (NEA ) gallium arsenide (GaAs) photo‐cathode becomes a researcher focus nowadays .The thermal emittance is the lower limit of emittance ,and its measurement is of great importance to determine the brightness that an injector can provide .In this paper ,based on the terahertz free electron laser (FEL‐T Hz) facility in China Academy of Engineering Physics ,some efforts were made to calculate and measure the thermal emittance of NEA‐GaAs photocathode . Under ultra‐low charge of 28 fC NEA‐GaAs photocathode ,the thermal emittance is (0.603 ± 0.002)μm/mm by the solenoid scan method .

  19. Efficient injection of spin-polarized electrons from manganese arsenide contacts into aluminum gallium arsenide/gallium arsenide spin LEDs (United States)

    Schweidenback, Lars

    In this thesis we describe two spectroscopic projects project on semiconductor heterostructures, as well as putting together and testing a micro-photoluminescence/7 tesla magnet system for the study of micron size two-dimensional crystals. Below we discuss the three parts in more detail. i) MnAs-based spin light emitting diodes. We have studied the injection of spin-polarized electrons from a ferromagnetic MnAs contact into an AlGaAs(n)/GaAs(i)/AlGaAs(p) n-i-p light emitting diode. We have recorder the emitted electroluminescence as function of magnetic field applied at right angles to the device plane in the 7-300 K temperature range. It was found that at 7 Kelvin the emitted light is circularly polarized with a polarization that is proportional to the MnAs contact magnetization with a saturation value of 26% for B > 1.25 tesla. The polarization persists up to room temperature with a saturation value of 6%. ii) Optical Aharonov-Bohm effect in InGaAs quantum wells. The excitonic photoluminescence intensity from InGaAs quantum wells as function of magnetic field exhibits two local maxima superimposed on a decreasing background. The maxima are attributed to the optical Aharonov-Bohm effect of electrons orbiting around a hole localized at the center of an Indium rich InGaAs islands detected by cross sectional scanning tunneling microscopy. Analysis of the position of the maxima yields a value of the electron orbit radius. iii) Micro-Photoluminescence. We have put together a micro-photoluminescence /7 tesla system for the study of two dimensional crystals. The samples are placed inside a continuous flow cryostat whose tail is positioned in the bore of the 7 tesla magnet. A microscope objective is used to focus the exciting laser light and collect the emitted photoluminescence. The system was tested by recording the photoluminescence spectra of WS2 and WSe 2 monolayers at T = 77 K.

  20. Nuclear Magnetic Resonance in Gallium Arsenide. (United States)


    dependance of the second moment of the line- shapes on the orientation of the crystal in the field supports a continuous solid model of the strain, in which...visible in the lightly doped sample. Hester, Sher, Soest, and Weisz have shown that, assuming first order broadening, the angular dependance of the second...this study. The second moments found agreed qualitatively with those found by Hester, Sher, Soest, and Weisz in their 3angular dependance . However

  1. Deep Impurity States in Gallium Arsenide. (United States)


    density of electron states, E, is the ree -eleroi Form. enerry. E, . =(/ 2 ex F, , - > + ! . is the forbidden band gap, and E, is the averave or Penn...Ledebo, J. Appl. Phys. 46, was observed in the bulk sample C. 2155 (1975). 5H.J. Stocker, E. Bauser, and Laurence Schmidt Figure 6 finally shows the

  2. Gallium Arsenide and Related Compounds, 1986. (United States)


    California at Santa Barbara , for his contributions to hot-electron effects, the Gunn Oscillator, and III - V heterojunction devices including the... Caper )o p A11k ’I T~’I N-H Lboratoiets Mimarrai% ill. N.J (;70)71 lh.-.tra1 t ml’.Ii"’i"~t. lh’~t’~’ I)(- it first rt’alizaioni of a t’(’"mmianit... Barbara , CA 93106 J. R. Abelson and T. W. Sigmon Stanford Electronics Laboratories Stanford University, Stanford, CA 94305 Abstract Epitaxial regrowth

  3. Complex vibrations in arsenide skutterudites and oxyskutterudites (United States)

    Bridges, F.; Car, B.; Sutton, L.; Hoffman-Stapleton, M.; Keiber, T.; Baumbach, R. E.; Maple, M. B.; Henkie, Z.; Wawryk, R.


    The local structure of two skutterudite families—Ce M4As12 (M =Fe , Ru, Os) and L n Cu3Ru4O12 (L n =La , Pr, and Nd)—have been studied using the extended x-ray absorption fine structure (EXAFS) technique with a focus on the lattice vibrations about the rare-earth "rattler atoms" and the extent to which these vibrations can be considered local modes, with the rattler vibrating inside a nearly rigid cage. X-ray absorption data at all the metal edges were collected over a temperature range of 4 to 300 K and analyzed using standard procedures. The pair distances from EXAFS results agree quite well with the average structure obtained from diffraction. The cage structure is formed by the M and As atoms in Ce M4As12 and by Cu, O, and Ru atoms in L n Cu3Ru4O12 . Although some of the bonds within the cage are quite stiff (correlated Debye temperatures, θcD, are ˜500 K for Ce M4As12 and above 800 K for L n Cu3Ru4O12 ), we show that the structure is not completely rigid. For the rattler atom the nearest-neighbor pairs have a relatively low Einstein temperature, θE:˜100 - 120 K for Ce-As and ˜130 K for L n -O . Surprisingly, the behaviors of the second-neighbor pairs are quite different: for Ce M4As12 the second-neighbor pairs (Ce -M ) have a weaker bond while for L n Cu3Ru4O12 the L n -Ru second-neighbor pair has a stiffer effective spring constant than the first-neighbor pair. In addition, we show that the As4 or CuO4 rings are relatively rigid units and that their vibrations are anisotropic within these cubic structures, with stiff restoring forces perpendicular to the rings and much weaker restoring forces in directions parallel to the rings. Consequently vibrations of the rings may also act as "rattlers" and help suppress thermal conductivity. In general neither the rigid-cage approximation nor the simple reduced-mass approximation are sufficient for describing rattler behavior.

  4. Phonon heat transport in gallium arsenide

    Indian Academy of Sciences (India)

    Richa Saini; Vinod Ashokan; B D Indu; R Kumar


    The lifetimes of quantum excitations are directly related to the electron and phonon energy linewidths of a particular scattering event. Using the versatile double time thermodynamic Green’s function approach based on many-body theory, an ab-initio formulation of relaxation times of various contributing processes has been investigated with newer understanding in terms of the linewidths of electrons and phonons. The energy linewidth is found to be an extremely sensitive quantity in the transport phenomena of crystalline solids as a collection of large number of scattering processes, namely, boundary scattering, impurity scattering, multiphonon scattering, interference scattering, electron–phonon processes and resonance scattering. The lattice thermal conductivities of three samples of GaAs have been analysed on the basis of modified Callaway model and a fairly good agreement between theory and experimental observations has been reported.

  5. Study of the electrochemical oxidation of Am with lacunary heteropolyanions and silver nitrate; Etude de l'oxydation electrochimique de l'americium en presence d'heteropolyanions lacunaires et de nitrate d'argent en milieu aqueux acide

    Energy Technology Data Exchange (ETDEWEB)

    Chartier, D


    Electrochemical oxidation of Am(III) with certain lacunary heteropolyanions (LHPA {alpha}{sub 2}-P{sub 2}W{sub 17}O{sub 61}{sup 10-} or {alpha}SiW{sub 11}O{sub 39}{sup 8-}) and silver nitrate is an efficient way to prepare Am(VI). This document presents bibliographic data and an experimental study of the process. Thus, it has been established that Am(IV) is an intermediate species in the reaction and occurs in 1:1 (Amt{sup IV}LHPA) or 1:2 (Am {sup IV}(LHAP){sub 2}) complexes with the relevant LHPA. These 1:1 complexes of Am(IV) have been identified and isolated in this work whereas 1:2 complexes were known from previous studies. The reactivity of these complexes in oxidation shows that 1:1 complexes of Am(IV) are oxidised much more quickly than 1:2 complexes. Apparent stability constants of Am(III) and Am(IV) complexes with the relevant LHPA have been measured for a 1 M nitric acid medium. Thermodynamic data of the reaction are then assessed: redox potentials of Am pairs are computed for a 1 M nitric acid medium containing various amount of LHPA ligands. Those results show that the role of LHPA is to stabilize the intermediate species Am(IV) by lowering the Am(IV)/Am(III) pair potential of about 1 Volt. Nevertheless, if this stabilisation is too strong (i.e. of tungsto-silicate), the oxidation of Am(IV) requires high anodic potential (more than 2 V/ENH). Then, the faradic yield of the oxidation of americium is poor because of water oxidation. This study has also shown that the main role of silver is to catalyze the electrochemical oxidation of Am{sup IV}(LHPA){sub X} complexes. Indeed, these oxidations without silver are extremely slow. An oxygen tracer experiment has been performed during the oxidation of Am(III) in Am(VI). It has been shown that the oxygen atoms of Am(VI) (AMO{sub 2}{sup 2+}) come from water molecules of the solvent and not from the complexing oxygen atoms of the ligands. (author)

  6. Fabrication of targets for transmutation of americium : synthesis of inertial matrix by sol-gel method. Procedure study on the infiltration of a radioactive solutions; Fabricacion de blancos para la transmutacion de americio: sintesis de matrices inertes por el metodo sol-gel. Estudio del procedimiento de infiltracion de disoluciones radiactivas

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez Carretero, A. [Universidad Complutense de Madrid (Spain)


    made. In addition a new and unexpected phase formed by the reaction of americium with spinel during the high temperature synthesis process has been identified. This new phase could provide a unique menas to stabilise Am in one particular oxidation state. (Author)

  7. Excitation and De-Excitation Mechanisms of ER - Gallium Arsenide and Aluminum Gallium Arsenide (United States)

    Elsaesser, David William

    Electrical and optical characterization have been performed on GaAs and Al_{rm x}Ga_{rm 1-x} As samples doped with Er either by ion implantation and during Molecular Beam Epitaxial (MBE) growth. The electrical techniques of Deep Level Transient Spectroscopy (DLTS) and Temperature-Dependent Hall Effect (TDH) indicated that Er primarily formed two electrically active centers in both materials. The first center gave rise to a hole trap at E_{rm v} + 35 meV, which was thought to be due to Er substituting for a Ga atom (Er_{rm Ga}) and giving rise to an isoelectronic impurity potential. The second center also gave rise to a hole trap at approximately E_{rm v} + 360 meV, and was attributed to an Er atom occupying an interstitial position (Er_{rm i}). Annealing studies performed on Er-implanted GaAs indicated that the Er_{rm Ga} center preferentially formed at higher annealing temperatures (> 850^circC), with the Er_{rm i} reaching a maximum concentration at an annealing temperature of around 750^circC. Additionally, optical characterization performed by Photoluminescence (PL) measurements showed that the Er_{ rm i} center gave much stronger Er-related emissions due to the transition ^4I _{13/2} to ^4 I_{15/2} in the unfilled Er^{3+}-4f shell than was observed for 4f-emissions associated with the Er_{rm Ga} center. Mechanisms for the excitation and de-excitation of the Er-4f shell in GaAs, consistent with all experimental observations, were proposed. DLTS measurements also detected the presence of a large concentration of Ga-antisite (Ga_ {rm As}) defects as well as As-interstitial (As_{rm i}) defects. Based upon reports of Er^{3+} -4f emissions from four distinct Er-centers, two other likely Er-centers were proposed, Er_{rm Ga}-Ga_{rm As} and Er_{rm Ga} -As_{rm i}. Finally, electrical and optical characterization of Er-doped MBE -grown Al_{0.5}Ga _{rm 0.5}As indicated that the solubility limit of Er in this material was possibly as high as 2 times 10^ {19} cm^{-3}, as compared to 7 times 10 ^{17} cm^ {-3} in GaAs. This may explain the observation that Er^{3+}-4f emissions are more intense in AlGaAs compared to GaAs.

  8. Electroluminescence Studies on Longwavelength Indium Arsenide Quantum Dot Microcavities Grown on Gallium Arsenide (United States)


    been calculated by solving the three dimensional effective mass single particle Schrodinger equation and are shown in Figure 2.19 [23...particle Schrodinger equation and is shown in Figure 2.20 for various sized pyramidal dots. Over a limited range of sizes the transition energy

  9. 241镅跟骨骨密度测定在骨质疏松症中的初步应用 ——与腰椎骨密度测定的对比研究%Preliminary application of 241-Americium calcaneus bone mineral density measurement in osteoporosis ——comparison with double X-ray densitometry of the lumber spine

    Institute of Scientific and Technical Information of China (English)

    管梁; 朱承谟; 李培勇; 王辉; 濮鸣芳; 仇季高


    Bone mineral density (BMD) of calcaneus in 54 normals, 45 Osteoporosis, 25 suspected osteoporosis and 16 other non-osteoporosis patients, a total of 140 cases were measured by HUAKE (HK-1) 241-Americium BMD absorpmetry, among them 43 were compared with that of lumber spine (L2—L4) measured by Lunar Corporation's Expert-XL absorpmeter. BMD of normal group of calcaneus was (409.8±79.4)mg/cm2. The BMD were decreased slowly with the increased age. The BMD of osteoporosis, suspected osteoporosis and non-osteoporosis group were 230.3±62.3, 395.7±57.4 and 363.3±51.9mg/cm2 respectively. The BMD of osteoporosis group was much lower than that of normal group, and also lower than that of the other two groups, among 26 patients (57.78%) had bone fracture, all was in accordance with the clinical diagnosis of osteoporosis. The BMD of suspected ospteoporosis and non-osteoporosis had no significant difference with normal group. The coefficient variation (CV) of BMD in repeated measurement in calcaneus of 4 pariticipants was less than 1.2%. The correlative coefficient (r) between BMD of calcaneus and lumber spine (L2—L4) group was 0.6824. The correlative coefficient of normal young adult-matched percentage and T value in 2 groups were 0.6863 and 0.6755 respectively, whereas aged-matched percentage, Z value were 0.4614 and 0.5009 respectively. In conclusion 241-Americium calcaneus BMD absorpmetry has the advantage of low price, easy to operate, reliable and valuable in diagnosis osteoporosis. The correlations of calcaneus and lumber spine BMD, normal young adult-matched percentagy and T value were rather good.%为评价跟骨骨密度测定在骨质疏松症中的初步临床应用及与腰椎测定结果的相关性,用国产华科(HK-1型)241镅骨密度仪测定了140例跟骨骨密度(BMD)。其中正常人组54例,骨质疏松确诊组45例,骨质疏松可疑组25例和其他非骨质疏松组16例。其中43例与美国Luner 公司的Expert-XL图像骨密度仪腰

  10. Clinical evaluation of dentin hypersensitivity treatment with the low intensity Gallium-Aluminum-Arsenide laser - AsGaAl Avaliação clínica do tratamento da hiperestesia dentinária com laser de baixa potência de Arseniato de Gálio-Alumínio - AsGaAl

    Directory of Open Access Journals (Sweden)

    Luciana Chucre Gentile


    Full Text Available The dentin hypersensitivity is a painful condition rather prevalent in the general population. There are several ways of treatment for such condition, including the low intensity lasers. The proposal of this study was to verify the effectiveness of the Gallium-Aluminum-Arsenide diode laser in the treatment of this painful condition, using a placebo as control. MATERIALS AND METHODS: Thirty-two patients were selected, 22 females and 10 males, with ages ranging from 20 to 52 years old. The 32 patients were randomly distributed into two groups, treated and control; the sample consisted of 68 teeth, 35 in the treated group and 33 in the control group. The treated group was exposed to six laser applications with intervals from 48 to 72 hours, and the control group received, as placebo, applications of a curing light. RESULTS: A significant reduction was observed in the pain condition between the initial phase and after six laser applications; however, such reduction could also be observed for the control group exposed to the placebo. CONCLUSION: Therapy with the low intensity Gallium-Aluminum-Arsenide laser - AsGaAl induces a statistically significant reduction in the painful condition after each application and between the beginning and end of treatment, although there was no statistically significant difference between the treated group (laser and the control group (placebo at the end of treatment and after the mediate evaluation results (after 6 weeks, this way impairing the real measurement of laser effectiveness and placebo effect.A hiperestesia dentinária trata-se de uma condição dolorosa bastante prevalente nas populações mundiais. Várias são as modalidades de tratamento para tal condição, entre elas, os lasers de baixa potência. A proposta deste estudo foi a de verificar a efetividade do laser de diodo de Arseniato de Gálio-Alumínio no tratamento desta condição dolorosa, utilizando-se um placebo como controle. MATERIAIS E M

  11. Americium separation from nuclear fuel dissolution using higher oxidation states.

    Energy Technology Data Exchange (ETDEWEB)

    Bruce J. Mincher


    Much of the complexity in current AFCI proposals is driven by the need to separate the minor actinides from the lanthanides. Partitioning and recycling Am, but not Cm, would allow for significant simplification because Am has redox chemistry that may be exploited while Cm does not. Here, we have explored methods based on higher oxidation states of Am (AmV and AmVI) to partition Am from the lanthanides. In a separate but related approach we have also initiated an investigation of the utility of TRUEX Am extraction from thiocyanate solution. The stripping of loaded TRUEX by Am oxidation or SCN- has not yet proved successful; however, the partitioning of inextractable AmV by TRUEX shows promise.

  12. Further Studies of Plutonium and Americium at Thule, Greenland

    DEFF Research Database (Denmark)

    Aarkrog, Asker; Dahlgaard, Henning; Nilsson, Karen Kristina;


    further away from the impact point and at some locations the vertical distribution indicated a downward displacement of Pu in the sediment column since 1974. Seawater and seaplants showed no evidence of the presence of Pu from sources other than fallout; but Pu in benthos varied nearly proportionally......, but in benthos 241Am/239,240Pu were two times higher than in sediments. Seaplants showed the same value of Am/Pu as seawater. There was no indication of any biomagnification of Pu or Am through the marine food chains at Thule....

  13. Property Data for Simulated Americium/Curium Glasses

    Energy Technology Data Exchange (ETDEWEB)

    Riley, B.J.; Smith, D.E.; Peeler, D.K.; Reamer, I.A.; Vienna, J.D.; Schweiger, M.J.


    The authors studied the properties of mixed lanthanide-alumino-borosilicate glasses. Fifty-five glasses were designed to augment a previous, Phase I, study by systematically varying the composition of Ln{sub 2}O{sub 3} and the concentrations of Ln{sub 2}O{sub 3}, SiO{sub 2}, B{sub 2}O{sub 3}, Al{sub 2}O{sub 3}, and SrO in glass. These glasses were designed and fabricated at the Savannah River Technology Center and tested at the Pacific Northwest National Laboratory. The properties measured include the high-temperature viscosity ({eta}) as a function of temperature (T) and the liquidus temperature (T{sub L}) of Phase II test glasses.

  14. Plutonium and americium contamination in Rocky Flats soil, 1973

    Energy Technology Data Exchange (ETDEWEB)

    Krey, P.; Hardy, E.; Volchok, H.; Toonkel, L.; Knuth, R.; Coppes, M.; Tamura, T.


    The plutonium mass isotopic analysis and the Am-241 analysis of soil samples from Rocky Flats identify the contamination as Pu which was processed in 1958. The Am-241 activity in the soil will reach its maximum in 2033 and represent 18 percent of the Pu-239-240 activity. Nuclide ratios indicate that current operations at Rocky Flats contribute little to the airborne Pu concentrations which are due to resuspension of the contaminated soil. Root uptake of Pu or Am by vegetation is slight or shows no discrimination among the isotopes and nuclides studied. The relationship between Pu deposition contour and the area enclosed by that contour has been verified for contour values extending over 7 orders of magnitude. This gives confidence to our calculations of the quantities of Pu released on and off the Rocky Flats plant site. (auth)

  15. Biosorption of americium-241 by immobilized Rhizopus arrihizus

    Energy Technology Data Exchange (ETDEWEB)

    Liao Jiali E-mail:; Yang Yuanyou; Luo Shunzhong; Liu Ning; Jin Jiannan; Zhang Taiming; Zhao Pengji


    Rhizopus arrihizus (R. arrihizus), a fungus, which in previous experiments had shown encouraging ability to remove {sup 241}Am from solutions, was immobilized by calcium alginate and other reagents. The various factors affecting {sup 241}Am biosorption by the immobilized R. arrihizus were investigated. The results showed that not only can immobilized R. arrihizus adsorb {sup 241}Am as efficiently as free R. arrihizus, but that also can be used repeatedly or continuously. The biosorption equilibrium was achieved within 2 h, and more than 94% of {sup 241}Am was removed from {sup 241}Am solutions of 1.08 MBq/l by immobilized R. arrihizu in the pH range 1-7. Temperature did not affect the adsorption on immobilized R. arrihizus in the range 15-45 deg. C. After repeated adsorption for 8 times, the immobilized R. arrihizus still adsorbed more than 97% of {sup 241}Am. At this time, the total adsorption of {sup 241}Am was more than 88.6 KBq/g, and had not yet reached saturation. Ninety-five percent of the adsorbed {sup 241}Am was desorbed by saturated EDTA solution and 98% by 2 mol/l HNO{sub 3}.

  16. Gallium arsenide based surface plasmon resonance for glucose monitoring (United States)

    Patil, Harshada; Sane, Vani; Sriram, G.; Indumathi, T. S; Sharan, Preeta


    The recent trends in the semiconductor and microwave industries has enabled the development of scalable microfabrication technology which produces a superior set of performance as against its counterparts. Surface Plasmon Resonance (SPR) based biosensors are a special class of optical sensors that become affected by electromagnetic waves. It is found that bio-molecular recognition element immobilized on the SPR sensor surface layer reveals a characteristic interaction with various sample solutions during the passage of light. The present work revolves around developing painless glucose monitoring systems using fluids containing glucose like saliva, urine, sweat or tears instead of blood samples. Non-invasive glucose monitoring has long been simulated using label free detection mechanisms and the same concept is adapted. In label-free detection, target molecules are not labeled or altered, and are detected in their natural forms. Label-free detection mechanisms involves the measurement of refractive index (RI) change induced by molecular interactions. These interactions relates the sample concentration or surface density, instead of total sample mass. After simulation it has been observed that the result obtained is highly accurate and sensitive. The structure used here is SPR sensor based on channel waveguide. The tools used for simulation are RSOFT FULLWAVE, MEEP and MATLAB etc.

  17. Strategic Review of Arsenide, Phosphide and Nitride MOSFETs


    Gourab Dutta; Palash Das; Partha Mukherjee; Dhrubes Biswas


    Metal oxide semiconductor field effect transistor used as an amplifier and switch uses Si primarily as a channel material for its very stable oxide SiO2. In-spite of many advantages there are some restrictions for Si MOS, so the world is approaching towards compound semiconductor for higher frequency and current. The development of compound semiconductor metal oxide semiconductor is also facing critical problems due to the lack of availability of proper gate oxide material. Research is being ...

  18. Nickel-gallium arsenide high-voltage power Schottky diodes (United States)

    Ashkinazi, G.; Hadas, Tz.; Meyler, B.; Nathan, M.; Zolotarevski, L.; Zolotarevski, O.


    A power GaAs Schottky diode (SD) with a chemically deposited Ni barrier was designed, fabricated and tested. The diode has a reverse breakdown voltage VBR of 140 V, forward voltage drop VF (at 50 A/cm 2) of 0.7 V at 23°C, 0.5 V at 150°C and 0.3 V at 250°C, and reverse leakage current densities jR (at -50 V) of 0.1 μA/cm 2 at 23°C and 1 mA/cm 2 at 150°C. Calculated forward and reverse I- V characteristics using a simple self-consistent computer model are in good agreement with measured values. Calculated characteristics of a silicon SD with identical structure parameters, using the same model, show much poorer VBR, VF and jR values. The theoretical maximum value of VBR is physically limited by the largest allowed VF. For a V Fof ⋍1.6 V, V BR.maxis ⋍200 V in Si and ⋍800 simple technology allows manufacturing of large area GaAs Schottky diodes with average currents up to V in GaAs SDs. Our relatively 100 A.

  19. Resonance Raman Scattering Studies of Gallium - - Aluminum-Arsenide Superlattices. (United States)

    Gant, Thomas Andrew

    We have made resonance Raman scattering studies of folded LA phonons and quantized LO phonons in several GaAs-AlAs superlattices. The motivation for this work was to study the electronic structure and the electron -phonon interaction in these structures. The samples were not intentionally doped. The Raman spectra of optic phonons were usually taken at a temperature of 10 K or less. The folded acoustic phonon work was taken at temperatures ranging from 200-300 K in order to enhance the scattering by the thermal factor. Two samples in particular have received very close attention: sample 2292 (50 A GaAs- 20 A AlAs) and sample 3250 (20 A GaAs- 50 A AlAs). In sample 2292 we have made resonance studies of the folded LA phonons and the GaAs -like confined LO_2 mode near the second heavy hole exciton. The results on the folded acoustic phonons show a very strong resonance enhancement for the second order folded phonons, but very little for the first order. An interference between two different scattering channels (the n = 1 light hole and the n = 2 heavy hole subbands) seems to be responsible for this effect. The resonance profile for the LO_2 confined optic phonon in sample 2292 shows 4 peaks in the region from 1.8 eV to 2.05 eV. We have studied the dependence of this resonance profile on the power density. A higher power density was achieved by using the same laser power with a tighter focus. At the higher power density the peak at 1.93 eV (formerly the strongest peak present) vanished. This "bleaching" effect is related to screening due to the higher carrier density. In sample 3250 we have studied the polarization dependence of the resonance profiles of four peaks (LO _2, LO_4, LO_6, and an interface mode) near the lowest direct gap. The A_1 symmetry confined LO modes are seen in both polarized and depolarized geometries, in violation of the usual selection rule (polarized). A mechanism is proposed to explain this result, which has been previously observed by other workers.

  20. Photoelastic coupling in gallium arsenide optomechanical disk resonators

    CERN Document Server

    Baker, Christopher; Nguyen, Dac-Trung; Andronico, Alessio; Ducci, Sara; Leo, Giuseppe; Favero, Ivan


    We analyze the magnitude of the radiation pressure and electrostrictive stresses exerted by light confined inside GaAs semiconductor WGM optomechanical disk resonators, through analytical and numerical means, and find the electrostrictive force to be of prime importance. We investigate the geometric and photoelastic optomechanical coupling resulting respectively from the deformation of the disk boundary and from the strain-induced refractive index changes in the material, for various mechanical modes of the disks. Photoelastic optomechanical coupling is shown to be a predominant coupling mechanism for certain disk dimensions and mechanical modes, leading to total coupling g$_{om}$ and g$_0$ reaching respectively 3 THz/nm and 4 MHz. Finally, we point towards ways to maximize the photoelastic coupling in GaAs disk resonators, and we provide some upper bounds for its value in various geometries.

  1. Spontaneous low frequency oscillation studies in gallium arsenide fast photoconductors

    CERN Document Server

    Foulon, F; Brullot, B; Petit, P; Bergonzo, P; Rubbelynck, C


    We have investigated the influence of spontaneous low frequency oscillations (LFO, f approx 0.01 Hz) occurring at high electric field (>1 kV/cm) in resistive photoconductors (PCD) made from semi-insulating GaAs on the response of the PCDs under pulsed gamma-ray irradiation (E approx 1.2 MeV, tau sub F sub W sub H sub M =30 ns). The PCDs were fabricated using GaAs from five commercially available sources. The PCDs were irradiated with fission neutrons in order to reduce their response time down to less than 100 ps. The amplitude of the LFOs was found to be related to the carrier lifetime, and thus defect concentration in the GaAs material. It was larger for material exhibiting high carrier lifetime. Increasing the localised defect concentration, such as EL2 type defect, through GaAs irradiation with fission neutrons was found to decrease the amplitude of the LFOs. PCDs irradiated at high neutron doses (>1x10 sup 1 sup 5 neutrons/cm sup 2) showed no LFOs. It is suggested that interactions between the propagatin...

  2. Ion-beam induced isolation of gallium arsenide layers (United States)

    Sengupta, D.; Zemanski, J. M.; Williams, J. S.; Johnson, S. T.; Pogany, A. P.


    Epitaxial (n +-n) layers on semi-insulating GaAs samples were implanted with 60 keV He + ions at elevated temperatures. Samples were analysed to provide sheet resistivity, Hall mobility and carrier depth profiles using electrical measurement techniques and damage distributions using TEM and Rutherford backscattering and channeling. All of the data were correlated to identify the optimum conditions to achieve electrical isolation. Elevated temperature He + implants have been found to create uniform, single step isolation of GaAs layers. Isolation of the GaAs layers can be enhanced and stabilised further by a suitable post-implantation annealing process.

  3. Investigation of spin transport and accumulation in aluminum gallium arsenide (United States)

    Misuraca, Jennifer

    This dissertation describes spin injection, transport, and detection experiments from Fe electrodes into a bulk AlGaAs channel. This semiconducting alloy is one of a class of persistent photoconductors, chosen as the spin transport medium because its carrier density can be tuned in a controlled manner via photoexcitation through the metal to insulator transition (MIT) in situ. This allows one to determine the dependence of spin lifetime on a variety of external parameters including carrier density, all on one sample. This research represents the first electrical spin-dependent measurements in this material and describes the dependence of the Hanle signal size and spin lifetime on bias, temperature, and carrier density. The photoexcitation needed to change the carrier density in this material comes from an infrared light-emitting diode (IR LED). The first step of this project was to characterize the new, highly Si doped Al0.3Ga 0.7As heterostructures, in order to determine how the illumination of the sample will affect the parameters of the material. To complete this study, Hall crosses were fabricated from the AlGaAs material and the transport properties were measured between 350 mK and 165 K. The resistivity, carrier density, and mobility were determined as a function of temperature for a variety of different illumination times. From this data, the MIT, scattering mechanisms, and the shape of the band tail of the density of states (DOS) were investigated. In fact, this is the first work to electrically probe the DOS in AlGaAs. Once the materials were characterized, they were used to fabricate lateral spin transport devices. Spin transport and accumulation were studied in detail via Hanle effect measurements, which measure the dephasing of electron spins in a perpendicular magnetic field. From these measurements, the spin lifetime of the material can be calculated, and is in the nanosecond range for all measured carrier densities. The spin lifetimes are measured using three distinct measurement configurations which all give consistent results. The dependence of spin lifetime and Hanle signal size are reported as a function of bias, temperature, and carrier density. This is the first spin transport experiment using a persistently photoconductive material as the spin transport channel in order to change the carrier density of the material in situ. The research in this dissertation successfully provides a framework for the continuation of spin injection and detection studies in this and other alloy semiconductors, and provides insight into how the spin lifetime depends on the doping levels in semiconductors.

  4. Laser Induced Chemical Vapor Epitaxial Growth of Gallium Arsenide Films. (United States)


    heteroepitaxial growth of GaAs. The important process parameters are: the substrate surface cleanliness , substrate temperature, composition and flow rate of the...hydrogen was used as the diluent and win.dw purging gas [9]. The important process parameters are: the substrate surface cleanliness , substrate temperature

  5. Glow Discharge Optical Spectroscopy of Ion Implanted Gallium Arsenide. (United States)


    PECVD processes are silane (SiH4 ) plus either 47 t - Im ammonia (NH 3 ) or nitrogen (N2 ) or both. The chemical reactions are, 3SiH4+2N 2-Si3N 4+6H 2...Physics, 44:5183-5184 (Nov 1973). 68 I i . 13. Sawyer, R., Experimental Spectroscopy, New York: Dover Publication, Inc. (1963) 14. Kerm , W., R. Rosler...composition as functions of the follow- ing parameters: flow, pressure, substrate temperature, and RF power. Kerm , et al., (Ref 14) studied films grown

  6. Gallium Arsenide Pilot Line for High Performance Components (United States)


    4K SRAM I, where there are about 100,000 isolated vias. 3.5 Advanced Technology (A. G. Baca, A. I. Faris, R. M. Havrilla , S. E. Lengle, D. D. Manchon...Aluminum Interconnects (R. J. Shul, A. G. Baca, R. M. Havrilla , S. E. Lengle)........... C-3 2.2 Process Tester Characterization (A. G, Baca, D. D. Manchon...TECHNOLOGY 2.1 Aluminum Interconnects (R. J. Shul, A. G. Baca, R. M. Havrilla , S. E. Lengle) The aluminum interconnect metallization process requires

  7. Mechanism of Current Oscillations in Gallium Arsenide Photoconductive Semiconductor Switches

    Institute of Scientific and Technical Information of China (English)

    TIAN Li-Qiang; SHI Wei


    Semi-insulating photoconductive semiconductor switch with an electrode gap of 4mm, triggered by a laser pulse with energy of 0.5mJ, and applied bias of 2.5kV, the periodicity current oscillation with a cycle of 12ns is obtained. It is indicated that the current oscillation is one mode of transferred electron effect, namely quenched domain mode. This mode of trans-electron oscillator is obtained when the instantaneous bias electric field drops below the sustaining field (the minimum electric field required to support the domain) before the domain reaches the anode, which leads to the domain disappears somewhere in the bulk of the switch and away from the ohmic contacts. We mainly analyse the time-dependent characteristic of the mode, the theoretical analysis results are in excellent agreement with the experiment.

  8. High Energy Electron Radiation Degradation of Gallium Arsenide Solar Cells. (United States)


    relative spectral output of the Kratos source was determined. This procedure may be algebraically verified since the cell output current, i, is equal...A (cm2), then a unique voltage may be calculated for given values of 0 and C. Algebraically , this equation may be written as ~q A 77e ____ __ 8) C...position as necessary to achieve proper voltage. (d) Place solar cell on test block using plastic tweezers. (e) Start test program by typing " BASICA

  9. Photoluminescence Study of Ion Implantation Damage in Gallium Arsenide. (United States)


    appreciation is finally extended to my family, whose active moral sup- port was of great comfort during this trying period. Manual V. Key This thesis...Mounted directly behind the sample area on the cylinder was a pre- viously calibrated silicon diode which was used as a tempera - ture sensor. Also on...discriLminator- was connected to an in-house-built interface 26 - -j which amplif ied, stre- tcIed and inv(erted the2 signal properly conditioning it for

  10. High-performance fused indium gallium arsenide/silicon photodiode (United States)

    Kang, Yimin

    Modern long haul, high bit rate fiber-optic communication systems demand photodetectors with high sensitivity. Avalanche photodiodes (APDs) exhibit superior sensitivity performance than other types of photodetectors by virtual of its internal gain mechanism. This dissertation work further advances the APD performance by applying a novel materials integration technique. It is the first successful demonstration of wafer fused InGaAs/Si APDs with low dark current and low noise. APDs generally adopt separate absorption and multiplication (SAM) structure, which allows independent optimization of materials properties in two distinct regions. While the absorption material needs to have high absorption coefficient in the target wavelength range to achieve high quantum efficiency, it is desirable for the multiplication material to have large discrepancy between its electron and hole ionization coefficients to reduce noise. According to these criteria, InGaAs and Si are the ideal materials combination. Wafer fusion is the enabling technique that makes this theoretical ideal an experimental possibility. APDs fabricated on the fused InGaAs/Si wafer with mesa structure exhibit low dark current and low noise. Special device fabrication techniques and high quality wafer fusion reduce dark current to nano ampere level at unity gain, comparable to state-of-the-art commercial III/V APDs. The small excess noise is attributed to the large difference in ionization coefficients between electrons and holes in silicon. Detailed layer structure designs are developed specifically for fused InGaAs/Si APDs based on principles similar to those used in traditional InGaAs/InP APDs. An accurate yet straightforward technique for device structural parameters extraction is also proposed. The extracted results from the fabricated APDs agree with device design parameters. This agreement also confirms that the fusion interface has negligible effect on electric field distributions for devices fabricated from high quality fusion materials. The feasibility of fused InGaAs/Si APD for analog systems is also explored. Preliminary two-tone measurement shows that a moderately high dynamic range of 70 dBc/Hz1/2 for broadband Spur Free Dynamic Range (SFDR) or 82 dBc/Hz2/3 suboctave SFDR, up to 50 muA of optical current, can be achieved. The theoretical analyses of SNR show that fused InGaAs/Si APD receivers can provide larger Signal-to-Noise Ratio (SNR) than their III/V counterparts.

  11. Chemical mechanical polishing of Indium phosphide, Gallium arsenide and Indium gallium arsenide films and related environment and safety aspects (United States)

    Matovu, John Bogere

    As scaling continues with advanced technology nodes in the microelectronic industry to enhance device performance, the performance limits of the conventional substrate materials such as silicon as a channel material in the front-end-of-the-line of the complementary metal oxide semiconductor (CMOS) need to be surmounted. These challenges have invigorated research into new materials such as III-V materials consisting of InP, GaAs, InGaAs for n-channel CMOS and Ge for p-channels CMOS to enhance device performance. These III-V materials have higher electron mobility that is required for the n-channel while Ge has high hole mobility that is required for the p-channel. Integration of these materials in future devices requires chemical mechanical polishing (CMP) to achieve a smooth and planar surface to enable further processing. The CMP process of these materials has been associated with environment, health and safety (EH&S) issues due to the presence of P and As that can lead to the formation of toxic gaseous hydrides. The safe handling of As contaminated consumables and post-CMP slurry waste is essential. In this work, the chemical mechanical polishing of InP, GaAs and InGaAs films and the associated environment, health and safety (EH&S) issues are discussed. InP removal rates (RRs) and phosphine generation during the CMP of blanket InP films in hydrogen peroxide-based silica particle dispersions in the presence and absence of three different multifunctional chelating carboxylic acids, namely oxalic acid, tartaric acid, and citric acid are reported. The presence of these acids in the polishing slurry resulted in good InP removal rates (about 400 nm min-1) and very low phosphine generation (isolation structures was planarized and scratches, slurry particles and smearing of InP were absent. Additionally, wafers polished at pH 6 showed very low dishing values of about 12-15 nm, determined by cross sectional SEM. During the polishing of blanket GaAs, GaAs RRs were negligible with deionized water or with silica slurries alone. They were relatively high in aq. solutions of H2O2 alone and showed a strong pH dependence, with significantly higher RRs in the alkaline region. The addition of silica particles to aq. H2O2 did not increase the GaAs RRs significantly. The evolution of arsenic trihydride (AsH3) during the dissolution of GaAs in aq. H2O2 solution was similarly higher in the basic pH range than in neutral pH or in the acidic pH range. However, no AsH3 was measured during polishing, evidently because of the relatively high water solubility of AsH3. The work done on InGaAs polishing shows that InGaAs RR trends are different from those observed for InP or GaAs. InGaAs RRs at pH 2 are higher than those at pH 10 and highest at pH 4. Dissolution rates (DRs), Fourier Transform Infrared Spectroscopy (FTIR), contact angles, X-Ray Photoelectron Spectroscopy (XPS), X-Ray Fluorescence Spectroscopy (XRF), zeta potential measurements and calculated Gibbs free energy changes of the reactions involved during polishing and gas formation were used to discuss the observed RRs and hydride gas generation trends and to propose the reaction pathways involved in the material removal and in hydride gas generation mechanisms.

  12. Development of a Multi-layer Anti-reflective Coating for Gallium Arsenide/Aluminum Gallium Arsenide Solar Cells (United States)


    of light into power is more efficient than silicon. This gives GaAs solar cells the advantage in low-light conditions. Further, with their multi...of the solar cell actually end up in the active region able to convert photon energy into electrical energy . Several mechanisms contribute to energy ...and therefore, generate more photocurrent in the solar cell. As the photon having energy equal to or greater than the bandgap travels into the

  13. Substrate engineering for defect reduction and microstructure control in the growth of indium arsenide on (100) gallium arsenide (United States)

    Ganesan, Suryanarayanan

    The development of devices based on InAs, GaSb, and AlSb, semiconductors that possess narrow band-gaps and 0.61 nm lattice parameters, has been limited by the defects that ensue in epitaxial films that typically are grown on commercial semi-insulating, but 7% lattice-mismatched, GaAs substrates. The studies described in this dissertation investigate the application of a lateral epitaxial overgrowth technique for defect reduction and microstructure control to the InAs/GaAs heteroepitaxial system by exploring the development of microstructure at various stages of island and film growth in conventional and lateral overgrowth epitaxy (that is, on unpatterned and mask-patterned substrates, respectively). For a range of growth conditions, InAs films on unpatterned (100) GaAs substrates exhibit not only the threading dislocations characteristic of largely mismatched epitaxial films, but also systematic tilting within micron-scale InAs domains. Alteration of the pattern and magnitude of the tilt achieved by varying the growth conditions and/or introducing mask-patterned substrates suggest that not only chemical and kinetic, but also physical constraints can direct microstructural evolution during growth. Backscattered electron Kikuchi pattern-based orientation imaging was used to investigate the origin of the improved epitaxial alignment that is realized when InAs films were grown on mask-patterned (100) GaAs substrates. The island size at coalescence was shown to be critical in determining whether a single or two-fold, four-fold or six-fold epitaxial orientation relationship(s) is (are) present in the film. The evolution of tilt with increasing island size is attributed to the particulars of the misfit dislocation network that forms, which appears to evolve in this epitaxial system as the island grows, in accordance with a model proposed by Spencer and Tersoff [1,2]. Sub-micron (˜0.5 mum or less) island sizes at coalescence appear to lead to a single orientation aligned with the GaAs. This work shows that spatial constraints imposed at the early stages of growth, in this case through use of a mask-patterned substrate, can be used to promote coalescence at small island size as an alternative or parallel approach to setting growth conditions (temperature, precursor stoichiometry, etc.) in order to control the defect nucleation and microstructure. References. [1]. B.J. Spencer, and J. Tersoff, Appl. Phys. Lett. 77 (1997) 2533. [2]. B.J. Spencer, and J. Tersoff, Phys. Rev. B63 (2001) 205424.

  14. Theoretical Studies of High Energy Transport of Electrons and Holes in Gallium Arsenide, Indium Phosphide, Indium Arsenide, and Gallium Antimonide. (United States)


    interest and support in many aspects of this work. The author would also like to thank Professors N. Holonyak Jr., G. * Stillman, and B. Wheeler for...York, 1958. [321 R. P. Feynman , Statistical Mechanics, A Set of Lectures, W. A. * -. Benjamin, Reading Ma., 1972. [33] G. 3. lafrate, "Quantum transport

  15. Acoustic Phonon Scattering in Modulation Doped Aluminum sub x Gallium sub (1-x) Arsenide/Gallium Arsenide Heterojunctions (United States)


    of the distribution function through Monte Carlo simula- • tions of a two-dimensional electron gas in an AlxGaj-xAs/GaAs heterostructure confirm this...shown in Fig. 4.1b). The broadening may be regarded somewhat imprecisely as arising from the Heisenberg uncertainty principle, ,Er t, where AE is a...significant energy dependence of the den- ,,. sity of states. From the Heisenberg uncertainty principle we see that the broadening of the Landau levels

  16. Radiant Power Degradation of Silicon-Doped Gallium Arsenide and Gallium Aluminum Arsenide Infrared Light-Emitting Diodes. (United States)


    measured using a United Detector Technology Model 61AC (UDT61AC) Optometer , a United Detector Technol- ogy Model 2575R (UDT2575R) Integrating Sphere...the opening of the integrating sphere. Be sure both the integrating sphere and the diode are stationary. 3. Check the optometer . Be sure the CH 10-2. (You have now compensated the optometer for ambient light). The display may still read something on the 10-2 MULTIPLIER setting. If it does

  17. Photoinduced Dissociation Of N-alkyl Bromides On Gallium Arsenide(110) And Gallium Arsenide(100) Electron And Fragment Dynamics

    CERN Document Server

    Khan, K A


    In this study we investigate the UV-initiated electron transfer and dissociation fragment dynamics of selected n-alkyl bromides physisorbed on single crystals of GaAs. By systematically varying different chemical and structural parameters of the adsorbate/substrate system we explore a number of fundamental questions regarding the basic physics and chemistry of photochemical processes on surfaces. Monolayers of methyl, ethyl and propyl bromide were deposited on the (110), Ga-terminated (100) and As- terminated (100) surfaces of GaAs without thermal decomposition at 80 K. Substrate-mediated electron transfer to the molecule, induced by exposure to UV light at 193, 248 and 351 nm, causes C-Br bond cleavage. The electron transfer dynamics of this mechanism are examined as a function of wavelength and molecular complexity of the adsorbate to better understand the flow of energy and charge across the adsorbate/substrate interface. The photodynamics of the alkyl fragments are studied using mass-, energy- and angle-r...

  18. Efeito da terapia com laser de arsenieto de gálio e alumínio (660Nm sobre a recuperação do nervo ciático de ratos após lesão por neurotmese seguida de anastomose epineural: análise funcional Effect of gallium-aluminum-arsenide laser therapy (660Nm on recovery of the sciatic nerve in rats following neurotmesis lesion and epineural anastomosis: functional analysis

    Directory of Open Access Journals (Sweden)

    FA Reis


    Full Text Available CONTEXTUALIZAÇÃO: As lesões nervosas periféricas podem comprometer atividades diárias de um indivíduo e resultam em perda da sensibilidade e motricidade do território inervado. OBJETIVO: Com o intuito de acelerar os processos regenerativos, objetivou-se analisar a influência da aplicação do laser de arsenieto de gálio e alumínio (AsGaAl, 660Nm sobre a recuperação funcional do nervo ciático de ratos. MATERIAIS E MÉTODOS: O nervo ciático de 12 ratos Wistar foi submetido à lesão por neurotmese e anastomose epineural e divididos em dois grupos: controle e laserterapia. Após a lesão, utilizou-se o laser de GaAlAs, 660Nm, 4J/cm², 26,3mW, feixe de 0,63cm², em três pontos eqüidistantes sobre a lesão, por 20 dias. As impressões das pegadas dos animais foram obtidas antes e após (sete, 14 e 21 dias pós-operatórios o procedimento cirúrgico e calculou-se o índice funcional do ciático (IFC. RESULTADOS: A comparação do IFC não resultou em diferença significante (p>0,05 entre os grupos. CONCLUSÕES: Conclui-se que os parâmetros e métodos empregados na laserterapia demonstram resultados nulos sobre o IFC no período avaliado.CONTEXT: Peripheral nerve injuries result in sensory and motor losses in the innervated area and can hinder individuals’ daily activities. Objective: The objective was to analyze the influence of applying gallium-aluminum-arsenide (GaAlAs laser (660Nm on the functional recovery of the sciatic nerve in rats. METHODS: The sciatic nerve of 12 Wistar rats was subjected to injury consisting of neurotmesis and epineural anastomosis. The rats were divided into two groups: control and laser therapy. After the injury, a GaAlAs laser was used (660Nm, 4J/cm², 26.3mW and 0.63cm² beam at three equidistant points on the injury, for 20 days. Footprint impressions were obtained from the animals before and seven, 14 and 21 days after the surgical procedure and the sciatic functional index (SFI was calculated

  19. Americium and plutonium separation by extraction chromatography for determination by accelerator mass spectrometry. (United States)

    Kazi, Zakir H; Cornett, Jack R; Zhao, Xaiolei; Kieser, Liam


    A simple method was developed to separate Pu and Am using single column extraction chromatography employing N,N,N',N'-tetra-n-octyldiglycolamide (DGA) resin. Isotope dilution measurements of Am and Pu were performed using accelerator mass spectrometry (AMS) and alpha spectrometry. For maximum adsorption Pu was stabilized in the tetra valent oxidation state in 8M HNO3 with 0.05 M NaNO2 before loading the sample onto the resin. Am(III) was adsorbed also onto the resin from concentrated HNO3, and desorbed with 0.1 M HCl while keeping the Pu adsorbed. The on-column reduction of Pu(IV) to Pu(III) with 0.02 M TiCl3 facilitated the complete desorption of Pu. Interferences (e.g. Ca(2+), Fe(3+)) were washed off from the resin bed with excess HNO3. Using NdF3, micro-precipitates of the separated isotopes were prepared for analysis by both AMS and alpha spectrometry. The recovery was 97.7±5.3% and 95.5±4.6% for (241)Am and (242)Pu respectively in reagents without a matrix. The recoveries of the same isotopes were 99.1±6.0 and 96.8±5.3% respectively in garden soil. The robustness of the method was validated using certified reference materials (IAEA 384 and IAEA 385). The measurements agree with the certified values over a range of about 1-100 Bq kg(-1). The single column separation of Pu and Am saves reagents, separation time, and cost.

  20. Neutron capture and neutron-induced fission experiments on americium isotopes with DANCE (United States)

    Jandel, M.; Bredeweg, T. A.; Stoyer, M. A.; Wu, C. Y.; Fowler, M. M.; Becker, J. A.; Bond, E. M.; Couture, A.; Haight, R. C.; Haslett, R. J.; Henderson, R. A.; Keksis, A. L.; O'Donnell, J. M.; Rundberg, R. S.; Ullmann, J. L.; Vieira, D. J.; Wilhelmy, J. B.; Wouters, J. M.


    Neutron capture cross section data on Am isotopes were measured using the Detector for Advanced Neutron Capture Experiments (DANCE) at Los Alamos National Laboratory. The neutron capture cross section was determined for 241Am for neutron energies between thermal and 320 keV. Preliminary results were also obtained for 243Am for neutron energies between 10 eV and 250 keV. The results on concurrent neutron-induced fission and neutron-capture measurements on 242mAm will be presented where the fission events were actively triggered during the experiments. In these experiments, a Parallel-Plate Avalanche Counter (PPAC) detector that surrounds the target located in the center of the DANCE array was used as a fission-tagging detector to separate (n,γ) events from (n,f) events. The first direct observation of neutron capture on 242mAm in the resonance region in between 2 and 9 eV of the neutron energy was obtained.

  1. Evaluation of the readsorption of plutonium and americium in dynamic fractionations of environmental solid samples

    DEFF Research Database (Denmark)

    Petersen, Roongrat; Hou, Xiaolin; Hansen, Elo Harald


    A dynamic extraction system exploiting sequential injection (SI) for sequential extractions incorporating a specially designed extraction column is developed to fractionate radionuclides in environmental solid samples such as soils and sediments. The extraction column can contain a large amount...... of the two radionuclides. However, the dynamic system is fully automated, eliminates manual separations, significantly reduces the operational time required, and offers detailed kinetic information....

  2. Effect of solvent on in vitro dissolution: Summary of results for uranium, americium, and cobalt aerosols

    Energy Technology Data Exchange (ETDEWEB)

    Guilmette, R.A.; Hoover, M.D.


    The revised 10 CFR Part 20 has adopted the ICRP Publication 30 method for calculating the committed effective dose equivalent from intakes of radionuclides. This dosimetry scheme requires knowledge or assumptions about the chemical form of the radionuclide, its particle size, and its known or assumed solubility. The solubility is classified as being either D (relatively soluble), W, or Y (relatively insoluble), depending on whether the material dissolves over periods of days, weeks, or years. Although Nuclear Regulatory Commission licensees may wish to take advantage of material-specific knowledge in order to adjust annual limits on intake and derived air concentrations, relatively few radioactive materials to which workers and the general population may be exposed have been adequately characterized either in terms of physicochemical form or solubility. Experimental measurement of solubility using some type of in vitro dissolution measurement system is therefore needed. However, there is currently no clear consensus regarding the appropriate design of in vitro dissolution systems, particularly when considering the range of different radionuclides to be studied, and the complexity of the biological mechanisms involved in the retention and clearance of inhaled deposited radioactive particles. The purpose of this study was to evaluate the effect of the several solvents on the dissolution of four test aerosols ({sup 57}Co{sub 3}O{sub 4}, {sup 241}AmO{sub 2}, ammonium diuranate [ADU], and U{sub 3}O{sub 8}) selected to encompass a variety of chemical and biochemical properties in vivo. The results of this study provide some guidance on the usefulness of in vitro dissolution tests for estimating the solubility of unknown radionuclide particles within the context of a simple model such as the class D, W, and Y formulation of ICRP 30.

  3. Rapid selective separation of americium/curium from simulated nuclear forensic matrices using triazine ligands

    Energy Technology Data Exchange (ETDEWEB)

    Higginson, Matthew A.; Livens, Francis R.; Heath, Sarah L. [Manchester Univ. (United Kingdom). Centre for Radiochemistry Research; Thompson, Paul; Marsden, Olivia J. [AWE, Aldermaston, Reading (United Kingdom); Harwood, Laurence M.; Hudson, Michael J. [Reading Univ. (United Kingdom). Dept. of Chemistry; Lewis, Frank W. [Reading Univ. (United Kingdom). Dept. of Chemistry; Northumbria Univ., Newcastle upon Tyne (United Kingdom). Dept. of Chemical and Forensic Sciences


    In analysis of complex nuclear forensic samples containing lanthanides, actinides and matrix elements, rapid selective extraction of Am/Cm for quantification is challenging, in particular due the difficult separation of Am/Cm from lanthanides. Here we present a separation process for Am/Cm(III) which is achieved using a combination of AG1-X8 chromatography followed by Am/Cm extraction with a triazine ligand. The ligands tested in our process were CyMe{sub 4}-BTPhen, CyMe{sub 4}-BTBP, CA-BTP and CA-BTPhen. Our process allows for purification and quantification of Am and Cm (recoveries 80% - 100%) and other major actinides in < 2 d without the use of multiple columns or thiocyanate. The process is unaffected by high level Ca(II)/Fe(III)/Al(III) (10 mg mL{sup -1}) and thus requires little pre-treatment of samples.

  4. Americium-Curium Stabilization - 5'' Cylindrical Induction Melter System Design Basis

    Energy Technology Data Exchange (ETDEWEB)

    Witt, D.C.


    Approximately 11,000 liters (3,600) gallons of solution containing isotopes of Am and Cm are currently stored in F-Canyon Tank 17.1. These isotopes were recovered during plutonium-242 production campaigns in the mid- and late-1970s. Experimental work for the project began in 1995 by the Savannah River Technology Center (SRTC). Details of the process are given in the various sections of this document.

  5. Concordant plutonium-241-americium-241 dating of environmental samples: results from forest fire ash

    Energy Technology Data Exchange (ETDEWEB)

    Goldstein, Steven J [Los Alamos National Laboratory; Oldham, Warren J [Los Alamos National Laboratory; Murrell, Michael T [Los Alamos National Laboratory; Katzman, Danny [Los Alamos National Laboratory


    We have measured the Pu, {sup 237}Np, {sup 241}Am, and {sup 151}Sm isotopic systematics for a set of forest fire ash samples from various locations in the western U.S. including Montana, Wyoming, Idaho, and New Mexico. The goal of this study is to develop a concordant {sup 241}Pu (t{sub 1/2} = 14.4 y)-{sup 241}Am dating method for environmental collections. Environmental samples often contain mixtures of components including global fallout. There are a number of approaches for subtracting the global fallout component for such samples. One approach is to use {sup 242}/{sup 239}Pu as a normalizing isotope ratio in a three-isotope plot, where this ratio for the nonglobal fallout component can be estimated or assumed to be small. This study investigates a new, complementary method of normalization using the long-lived fission product, {sup 151}Sm (t{sub 1/2} = 90 y). We find that forest fire ash concentrates actinides and fission products with {approx}1E10 atoms {sup 239}Pu/g and {approx}1E8 atoms {sup 151}Sm/g, allowing us to measure these nuclides by mass spectrometric (MIC-TIMS) and radiometric (liquid scintillation counting) methods. The forest fire ash samples are characterized by a western U.S. regional isotopic signature representing varying mixtures of global fallout with a local component from atmospheric testing of nuclear weapons at the Nevada Test Site (NTS). Our results also show that {sup 151}Sm is well correlated with the Pu nuclides in the forest fire ash, suggesting that these nuclides have similar geochemical behavior in the environment. Results of this correlation indicate that the {sup 151}Sm/{sup 239}Pu atom ratio for global fallout is {approx}0.164, in agreement with an independent estimate of 0.165 based on {sup 137}Cs fission yields for atmospheric weapons tests at the NTS. {sup 241}Pu-{sup 241}Am dating of the non-global fallout component in the forest fire ash samples yield ages in the late 1950's-early 1960's, consistent with a peak in NTS weapons testing at that time. The age results for this component are in agreement using both {sup 242}Pu and {sup 151}Sm normalizations, although the errors for the {sup 151}Sm correction are currently larger due to the greater uncertainty of their measurements. Additional efforts to develop a concordant {sup 241}Pu-{sup 241}Am dating method for environmental collections are underway with emphasis on soil cores.

  6. Functional sorbents for selective capture of plutonium, americium, uranium, and thorium in blood. (United States)

    Yantasee, Wassana; Sangvanich, Thanapon; Creim, Jeffery A; Pattamakomsan, Kanda; Wiacek, Robert J; Fryxell, Glen E; Addleman, R Shane; Timchalk, Charles


    Self-assembled monolayer on mesoporous supports (SAMMS) are hybrid materials created from attachment of organic moieties onto very high surface area mesoporous silica. SAMMS with surface chemistries including three isomers of hydroxypyridinone, diphosphonic acid, acetamide phosphonic acid, glycinyl urea, and diethylenetriamine pentaacetate (DTPA) analog were evaluated for chelation of actinides ((239)Pu, (241)Am, uranium, thorium) from blood. Direct blood decorporation using sorbents does not have the toxicity or renal challenges associated with traditional chelation therapy and may have potential applications for critical exposure cases, reduction of nonspecific dose during actinide radiotherapy, and for sorbent hemoperfusion in renal insufficient patients, whose kidneys clear radionuclides at a very slow rate. Sorption affinity (K(d)), sorption rate, selectivity, and stability of SAMMS were measured in batch contact experiments. An isomer of hydroxypyridinone (3,4-HOPO) on SAMMS demonstrated the highest affinity for all four actinides from blood and plasma and greatly outperformed the DTPA analog on SAMMS and commercial resins. In batch contact, a fifty percent reduction of actinides in blood was achieved within minutes, and there was no evidence of protein fouling or material leaching in blood after 24 h. The engineered form of SAMMS (bead format) was further evaluated in a 100-fold scaled-down hemoperfusion device and showed no blood clotting after 2 h. A 0.2 g quantity of SAMMS could reduce 50 wt.% of 100 ppb uranium in 50 mL of plasma in 18 min and that of 500 dpm mL(-1) in 24 min. 3,4-HOPO-SAMMS has a long shelf-life in air and at room temperature for at least 8 y, indicating its feasibility for stockpiling in preparedness for an emergency. The excellent efficacy and stability of SAMMS materials in complex biological matrices suggest that SAMMS can also be used as orally administered drugs and for wound decontamination. By changing the organic groups of SAMMS, they can be used not only for actinides but also for other radionuclides. By using the mixture of these SAMMS materials, broad spectrum decorporation of radionuclides is very feasible.

  7. Subsurface Behavior of Plutonium and Americium at Non-Hanford Sites and Relevance to Hanford

    Energy Technology Data Exchange (ETDEWEB)

    Cantrell, Kirk J.; Riley, Robert G.


    Seven sites where Pu release to the environment has raised significant environmental concerns have been reviewed. A summary of the most significant hydrologic and geochemical features, contaminant release events and transport processes relevant to Pu migration at the seven sites is presented.

  8. New Synthetic Methods and Structure-Property Relationships in Neptunium, Plutonium, and Americium Borates. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Albrecht-Schmitt, Thomas Edward


    The past three years of support by the Heavy Elements Chemistry Program have been highly productive in terms of advanced degrees awarded, currently supported graduate students, peer-reviewed publications, and presentations made at universities, national laboratories, and at international conferences. Ph.D. degrees were granted to Shuao Wang and Juan Diwu, who both went on to post-doctoral appointments at the Glenn T. Seaborg Center at Lawrence Berkeley National Laboratory with Jeff Long and Ken Raymond, respectively. Pius Adelani completed his Ph.D. with me and is now a post-doc with Peter C. Burns. Andrea Alsobrook finished her Ph.D. and is now a post-doc at Savannah River with Dave Hobbs. Anna Nelson completed her Ph.D. and is now a post-doc with Rod Ewing at the University of Michigan. As can be gleaned from this list, students supported by the Heavy Elements Chemistry grant have remained interested in actinide science after leaving my program. This follows in line with previous graduates in this program such as Richard E. Sykora, who did his post-doctoral work at Oak Ridge National Laboratory with R. G. Haire, and Amanda C. Bean, who is a staff scientist at Los Alamos National Laboratory, and Philip M. Almond and Thomas C. Shehee, who are both staff scientists at Savannah River National Laboratory, Gengbang Jin who is a staff scientist at Argonne National Lab, and Travis Bray who has been a post-doc at both LBNL and ANL. Clearly this program is serving as a pipe-line for students to enter into careers in the national laboratories. About half of my students depart the DOE complex for academia or industry. My undergraduate researchers also remain active in actinide chemistry after leaving my group. Dan Wells was a productive undergraduate of mine, and went on to pursue a Ph.D. on uranium and neptunium chalcogenides with Jim Ibers at Northwestern. After earning his Ph.D., he went directly into the nuclear industry.

  9. Americium-241 and plutonium-237 turnover in mussels ( Mytilus galloprovincialis) living in field enclosures (United States)

    Guary, J. C.; Fowler, S. W.


    Loss of 241Am and 237Pu from contaminated mussels ( Mytilus galloprovincialis) living in situ in the Mediterranean Sea is described as the sum of three exponential functions. In the case of 241Am, two short-lived compartments representing a total of 80% of the incorporated radionuclide turned over rapidly with biological half-lives of 2 and 3 weeks. The remaining fraction of 241Am, associated with a long-lived compartment, was lost at an extremely slow rate ( Tb1/2=1·3 years). Plutonium-237 turnover in the two short-lived compartments (containing 70% of the Pu) was more rapid ( Tb1/2=1-2 days and 2 weeks) than that of 241Am; however, there was some indication that subsequent loss rates of the two radionuclides in long-lived compartments may be similar if determined over comparable periods of time. Loss rates of 241Am differed for the various tissues, with the most rapid rates occurring in gill, viscera and shell. Abrupt changes in loss observed in muscle and mantle suggested a translocation of 241Am to muscle and mantle during depuration. Whole shell contained by far the largest fraction (˜90%) of both 241Am and 237Pu taken up; in addition, these radionuclides are not irreversibly bound to mussel shell but readily leach into the water. These observations suggest that mollusc shell may influence the biogeochemistry of transuranic elements in littoral zones.

  10. Plutonium and americium inventories in atmospheric fallout and sediment cores from Blelham Tarn, Cumbria (UK)

    Energy Technology Data Exchange (ETDEWEB)

    Michel, H. E-mail:; Barci-Funel, G.; Dalmasso, J.; Ardisson, G.; Appleby, P.G.; Haworth, E.; El-Daoushy, F


    The objective of this paper is to report on the results of a study of {sup 238}Pu, {sup 239+240}Pu and {sup 241}Am inventories onto Blelham Tarn in Cumbria (UK). The atmospheric fallout inventory was obtained by analysing soil cores and the results are in good agreement with the literature: 101 Bq m{sup -2} for {sup 239+240}Pu; 4.5 Bq m{sup -2} for {sup 238}Pu and 37 Bq m{sup -2} for {sup 241}Am. The sediment core inventory for the whole lake is compared to the atmospheric fallout inventory. The sediment activity is 60-80% higher than the estimated fallout activity, showing a catchment area contribution and in particular the stream input.

  11. Plutonium and americium inventories in atmospheric fallout and sediment cores from Blelham Tarn, Cumbria (UK). (United States)

    Michel, H; Barci-Funel, G; Dalmasso, J; Ardisson, G; Appleby, P G; Haworth, E; El-Daoushy, F


    The objective of this paper is to report on the results of a study of 238Pu, 239 + 240Pu and 241Am inventories onto Blelham Tarn in Cumbria (UK). The atmospheric fallout inventory was obtained by analysing soil cores and the results are in good agreement with the literature: 101 Bq m(-2) for 239 + 240Pu; 4.5 Bq m(-2) for 238Pu and 37 Bq m(-2) for 241Am. The sediment core inventory for the whole lake is compared to the atmospheric fallout inventory. The sediment activity is 60-80% higher than the estimated fallout activity, showing a catchment area contribution and in particular the stream input.

  12. Assessment of Neptunium, Americium, and Curium in the Savannah River Site Environment

    Energy Technology Data Exchange (ETDEWEB)

    Carlton, W.H. [Westinghouse Savannah River Company, AIKEN, SC (United States)


    A series of documents has been published in which the impact of various radionuclides released to the environment by Savannah River Site (SRS) operations has been assessed. The quantity released, the disposition of the radionuclides in the environment, and the dose to offsite individuals has been presented for activation products, carbon cesium, iodine, plutonium, selected fission products, strontium, technetium, tritium, uranium, and the noble gases. An assessment of the impact of nonradioactive mercury also has been published.This document assesses the impact of radioactive transuranics released from SRS facilities since the first reactor became operational late in 1953. The isotopes reported here are 239Np, 241Am, and 244Cm.

  13. Fundamental chemistry and materials science of americium in selected immobilization glasses

    Energy Technology Data Exchange (ETDEWEB)

    Haire, R.G. [Oak Ridge National Lab., TN (United States); Stump, N.A. [Winston-Salem State Univ., NC (United States). Dept. of Physical Sciences


    We have pursued some of the fundamental chemistry and materials science of Am in 3 glass matrices, two being high-temperature (850 and 1400 C mp) silicate-based glasses and the third a sol-gel glass. Optical spectroscopy was the principal tool. One aspect of this work was to determine the oxidation state exhibited by Am in these matrices, as well as factors that control or may alter this state. A correlation was noted between the oxidation state of the f-elements in the two high-temperature glasses with their high-temperature oxide chemistries. One exception was Am: although AmO{sub 2} is the stable oxide encountered in air, when this dioxide was incorporated into the high-temperature glasses, only trivalent Am was found in the products. When Am(III) was used to prepare the sol-gel glasses at ambient temperature, and after these products were heated in air to 800 C, only Am(III) was observed. Potential explanations for the unexpected Am behavior is offered in the context of its basic chemistry. Experimental spectra, spectroscopic assignments, etc. are discussed.

  14. Americium, curium and neodymium analysis in ECRIX-H irradiated pellet. Sample preparation for TIMS measurements

    Energy Technology Data Exchange (ETDEWEB)

    Esbelin, E.; Buravand, E. [Commissariat a l' Energie Atomique, Bagnols-sur-Ceze (France). Centre de Marcoule; Bejaoui, S.; Lamontagne, J.; Bonnerot, J.M. [Commissariat a l' Energie Atomique, St-Paul-Lez-Durance (France). Centre de Cadarache


    This paper concerns quantitative isotopic analysis of Am, Cm and Nd contained in an irradiated AmO{sub 1.62}/MgO pellet. The complete analysis protocol is described, from dissolution of the pellets in a shielded line to the laboratory glove separation processes box for TIMS analysis. Emphasis is placed on the separation processes: by ion exchange resin in a hot cell and by HPLC in the laboratory. Intermediate measurements by X-ray fluorescence, alpha spectrometry, and ICP-AES are described. (orig.)

  15. Optimization of TRPO Process Parameters for Americium Extraction from High Level Waste

    Institute of Scientific and Technical Information of China (English)

    CHEN Jing; WANG Jianchen; SONG Chongli


    The numerical calculations for Am multistage fractional extraction by trialkyl phosphine oxide (TRPO) were verified by a hot test.1750 L/t-U high level waste (HLW) was used as the feed to the TRPO process.The analysis used the simple objective function to minimize the total waste content in the TRPO process streams.Some process parameters were optimized after other parameters were selected.The optimal process parameters for Am extraction by TRPO are:10 stages for extraction and 2 stages for scrubbing;a flow rate ratio of 0.931 for extraction and 4.42 for scrubbing;nitric acid concentration of 1.35 mol/L for the feed and 0.5 mol/L for the scrubbing solution.Finally,the nitric acid and Am concentration profiles in the optimal TRPO extraction process are given.

  16. Vertical distribution of radiocaesium, plutonium and americium in the Catalan Sea (northwestern Mediterranean)

    Energy Technology Data Exchange (ETDEWEB)

    Molero, J.; Sanchez-Cabeza, J.A.; Merino, J.; Pujol, Ll.; Vidal-Quadras, A. [Universidad Autonoma de Barcelona (Spain). Facultad de Ciencias; Mitchell, P.I. [University Coll., Dublin (Ireland). Lab. of Radiation Physics


    Caesium-137, {sup 239,240}Pu and {sup 241}Am concentration profiles (0-1000 m) have been determined in unfiltered large volume water samples collected from the Catalan Sea (northwestern Mediterranean). Results showed that radiocaesium concentration decreases quickly through the water column while the transuranic concentration increases with depth, showing a faster migration to the bottom layers. Comparing our results with those reported by other authors (1975-1980), radiocaesium input from Chernobyl releases has been identified through the profile. In addition, transuranic concentrations have decreased considerably in the different layers of the profile. (Author).

  17. Americium and plutonium separation by extraction chromatography for determination by accelerator mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Kazi, Zakir H. [Department of Earth Science, University of Ottawa, 140 Louis Pasteur Avenue, Ottawa K1N 6N5 (Canada); Cornett, Jack R., E-mail: [Department of Earth Science, University of Ottawa, 140 Louis Pasteur Avenue, Ottawa K1N 6N5 (Canada); Zhao, Xaiolei; Kieser, Liam [Department of Physics, University of Ottawa, 140 Louis Pasteur Avenue, Ottawa K1N 6N5 (Canada)


    Highlights: • Am and Pu were adsorbed and separated using a single extraction chromatography DGA column. • Pu was eluted from the column completely using on-column reduction of Pu(IV) to Pu(III). • ²⁴¹Am and 239,240Pu measurements by accelerator mass spectrometry (AMS) agree with the certified values in two SRMs. Abstract: A simple method was developed to separate Pu and Am using single column extraction chromatography employing N,N,N',N'-tetra-n-octyldiglycolamide (DGA) resin. Isotope dilution measurements of Am and Pu were performed using accelerator mass spectrometry (AMS) and alpha spectrometry. For maximum adsorption Pu was stabilized in the tetra valent oxidation state in 8 M HNO₃ with 0.05 M NaNO₂ before loading the sample onto the resin. Am(III) was adsorbed also onto the resin from concentrated HNO₃, and desorbed with 0.1 M HCl while keeping the Pu adsorbed. The on-column reduction of Pu(IV) to Pu(III) with 0.02 M TiCl₃ facilitated the complete desorption of Pu. Interferences (e.g. Ca²⁺, Fe³⁺) were washed off from the resin bed with excess HNO₃. Using NdF₃, micro-precipitates of the separated isotopes were prepared for analysis by both AMS and alpha spectrometry. The recovery was 97.7 ± 5.3% and 95.5 ± 4.6% for ²⁴¹Am and ²⁴²Pu respectively in reagents without a matrix. The recoveries of the same isotopes were 99.1 ± 6.0 and 96.8 ± 5.3% respectively in garden soil. The robustness of the method was validated using certified reference materials (IAEA 384 and IAEA 385). The measurements agree with the certified values over a range of about 1–100 Bq kg⁻¹. The single column separation of Pu and Am saves reagents, separation time, and cost.

  18. Criteria Considered in Selecting Feed Items for Americium-241 Oxide Production Operations

    Energy Technology Data Exchange (ETDEWEB)

    Schulte, Louis D. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)


    The analysis in this document serves the purpose of defining a number of attributes in selection of feed items to be utilized in recovery/recycle of Pu and also production operations of 241AmO2 material intended to meet specification requirements. This document was written in response to a specific request on the part of the 2014 annual program review which took place over the dates of October 28-29, 2014. A number of feed attributes are noted including: (1) Non-interference with existing Pu recovery operations; (2) Content of sufficient 241Am to allow process efficiency in recovery operations; (3) Absence of indications that 243Am might be mixed in with the Pu/241Am material; (4) Absence of indications that Cm might be mixed in with the Pu/241Am material; (5) Absence of indications of other chemical elements that would present difficulty in chemical separation from 241Am; (6) Feed material not expected to present difficulty in dissolution; (7) Dose issues; (8) Process efficiency; (9) Size; (10) Hazard associated with items and package configuration in the vault; (11) Within existing NEPA documentation. The analysis in this document provides a baseline of attributes considered for feed materials, but does not presume to replace the need for technical expertise and judgment on the part of individuals responsible for selecting the material feed to be processed. This document is not comprehensive as regards all attributes that could prove to be important. The value of placing a formal QA hold point on accepting feed items versus more informal management of feed items is discussed in the summation of this analysis. The existing planned QA hold points on 241AmO2 products produced and packaged may be adequate as the entire project is based on QA of the product rather than QA of the process. The probability of introduction of items that would inherently cause the241AmO2 products produced to be outside of specification requirements appears to be rather small.

  19. Bragg Reflector-Induced Increased Nonradiative Lifetime in Gallium Arsenide (GaAs)/Aluminum Gallium Arsenide (AlGaAs) Double Heterostructures (United States)


    the first 40 ns due to fast surface recombination as a result of screening of the electric field in the depletion region.12 After the first 40 ns, or...the substrate and the DHs increases the GaAs nonradiative lifetime. The fractional increase in the nonradiative lifetime varies with the MBE growth cell uses a GaAs/AlGaAs DH with a roughly 1–2 µm GaAs active region on top of an internal distributed Bragg reflector (BR) to take advantage of

  20. Multiband Gutzwiller theory of the band magnetism of LaO iron arsenide; Multiband Gutzwiller-Theorie des Bandmagnetismus von LaO-Eisen-Arsenid

    Energy Technology Data Exchange (ETDEWEB)

    Schickling, Tobias


    In this work we apply the Gutzwiller theory for various models for LaOFeAs. It was discovered in 2008 that doped LaOFeAs is superconducting below a temperature of T{sub c} = 28 K. Soon after that discovery, more iron based materials were found which have an atomic structure that is similar to the one of LaOFeAs and which are also superconducting. These materials form the class of iron-based superconductors. Many properties of this material class are in astonishing agreement with the properties of the cuprates. Therefore, studying this new material may promote our understanding of high-T{sub c} superconductivity. Despite great efforts, however, Density Functional Theory calculations cannot reproduce the small magnetic moment in the ground state of undoped LaOFeAs. Such calculations overestimate the magnetic moment by a factor 2-3. Within our Gutzwiller approach, we take additional local Coulomb correlations into account. We show that it is necessary to work with the iron 3d-orbitals and the arsenic 4p-orbitals to obtain a realistic description of LaOFeAs. For a broad parameter regime of the electronic interactions, we find a magnetic moment that is in the region of the experimentally observed values. We claim that the magnetic phase in LaOFeAs can be described as a spin-density wave of Landau-Gutzwiller quasi-particles.

  1. Superconductivity around quantum critical point in P-doped iron arsenides

    Energy Technology Data Exchange (ETDEWEB)

    Cao Guanghan, E-mail: [Department of Physics, Zhejiang University, Hangzhou 310027 (China); Jiang Shuai; Wang Cao; Li Yuke; Ren Zhi; Tao Qian; Dai Jianhui; Xu Zhuan [Department of Physics, Zhejiang University, Hangzhou 310027 (China)


    We demonstrate that, by the P/As substitution-without doping of charge carriers-in a FeAs-layer-based parent compound, superconductivity can be universally introduced. The maximum superconducting critical temperature (T{sub c}) of BaFe{sub 2}(As{sub 1-x}P{sub x}){sub 2} achieves 30 K. The P doping in LnFeAsO system (Ln = La and Sm) produces superconductivity below 11 K. The normal-state resistivity obeys linear temperature dependence and the normal-state Hall coefficient shows strong temperature dependence. These non-Fermi liquid behaviors suggest magnetic quantum criticality. The maximum T{sub c} values in different systems correlates strongly with the diagonal bondangle of Fe-As-Fe, implying the important role of the next-nearest-neighbor magnetic exchange coupling in iron pnictide superconductors.

  2. Ion implantation of silicon in gallium arsenide: Damage and annealing characterizations (United States)

    Pribat, D.; Dieumegard, D.; Croset, M.; Cohen, C.; Nipoti, R.; Siejka, J.; Bentini, G. G.; Correra, L.; Servidori, M.


    The purpose of this work is twofold: (i) to study the damage induced by ion implantation, with special attention to low implanted doses; (ii) to study the efficiency of annealing techniques — particularly incoherent light annealing — in order to relate the electrical activity of implanted atoms to damage annealing. We have used three methods to study the damage induced by ion implantation: (1) RBS (or nuclear reactions) in random or in channeling geometry (2) RX double crystal diffractometry and (3) electrical measurements (free carrier profiling). Damage induced by silicon implantation at doses >10 14at/cm 2 can be monitored by all three techniques. However, the sensitivity of RBS is poor and hence this technique is not useful for low implantation doses. As device technology requires dopant levels in the range of 5 × 10 12 atoms/cm 2, we are particularly interested to the development of analytical techniques able to detect the damage at this implantation level. The sensitivity of such techniques was checked by studying homogeneously doped (5 × 10 16 e -/cm 3) and semi-insulating GaAs samples implanted with 3 × 10 12 silicon atoms/cm 2 at 150 keV. The substrate temperature during implantation was 200°C. The damage produced in these samples and its subsequent annealing are evidenced by strong changes in X-ray double crystal diffraction spectra. This method hence appears as a good monitoring technique. Annealing of the implanted layers has been performed using incoherent light sources (xenon lamps) either in flash or continuous conditions. Reference samples have also been thermally annealed (850°C, 20 min in capless conditions). The results are compared, and the electrical carrier profiles obtained after continuous incoherent light irradiation indicate that the implanted silicon atoms are almost dully activated. The advantages and disadvantages of incoherent light irradiation are discussed (surface oxidation, surface damage) in comparison with standard thermal treatment.

  3. Soft-mask fabrication of gallium arsenide nanomembranes for integrated quantum photonics

    CERN Document Server

    Midolo, Leonardo; Kiršanskė, Gabija; Stobbe, Søren


    We report on the fabrication of quantum photonic integrated circuits based on suspended GaAs membranes. The fabrication process consists of a single lithographic step followed by inductively-coupled-plasma dry etching through an electron-beam-resist mask and wet etching of a sacrificial layer. This method does not require depositing, etching, and stripping a hard mask, greatly reducing fabrication time and costs, while at the same time yielding devices of excellent structural quality. We discuss in detail the procedures for cleaning the resist residues caused by the plasma etching and present a statistical analysis of the etched feature size after each fabrication step.

  4. A Gallium Arsenide MESFET Operational Amplifier for Use in Composite Operational Amplifiers (United States)


    F., Operational Amplifiers and Linear Integrated Circuits, 4th ed., Prentice Hall, 1991. 6. Sedra , A. S., and Smith , K. C., Microelectronic Circuits...7, pp. 1422-1429, July 1992. 17. McCamant, A. J., McCormack G. D., and Smith , D. H., "An Improved GaAs MESFET Model for SPICE," IEEE Transactions of...34Modeling Frequency Dependence of out Impedance of a Microwave MESFET at Low Frequencies," Electronics Letters, pp. 528-529, June 1985. 39. Smith , M. et al

  5. Design, Fabrication, and Characterization of 0.1 Micrometer Gallium Arsenide Mesfet's. (United States)

    Moore, Karen Elizabeth

    Very high performance 0.1 μm GaAs-based MESFET's have been designed, fabricated, and characterized in order to obtain an improved understanding of the full potential of these devices and the effects of process variations and layer structures on device performance. The FET's were fabricated with both "mushroom" and "gamma" gates using a bi-layer (PMMA/P(MMA-MAA)) electron beam lithography process. Process variations, including gate size, shape, and location, and gate recess depth, were systematically evaluated in GaAs FET's through DC and RF transistor performance, biased and un-biased equivalent circuit parameters, and transistor minimum noise figure. The bias dependence of the devices was studied using the results of cold de-embedding to determine intrinsic and extrinsic equivalent circuit values. These bias variations were related back to DC and RF device performance, in order to better understand how to optimize the biasing of a GaAs MESFET. The performance of the devices fabricated and tested was world class, with maximum f_sp {t}{'}s over 100 GHz, f_sp{max}{'}s over 150 GHz, and little sensitivity to process variations. This demonstrates the continued importance of GaAs and GaAs based MESFET's as high performance microwave devices with large scale commercial potential.

  6. Drift velocity oscillations in n-gallium arsenide at 77/sup 0/K

    Energy Technology Data Exchange (ETDEWEB)

    Matulionis, A.; Pozela, J.; Reklaitis, A.


    Electron relaxation after an instantaneous application of dc electric fields ranging from 10 V/cm to 1 kV/cm was studied numerically by a many-particle Monte Carlo method. The model takes into account polar optical, acoustic, and impurity scattering in the nonparabolic central valley. In the limited range of doping, electric field, and temperature the electron mean energy and drift velocity oscillate. The oscillation frequency is nearly proportional to the applied electric field (approximately 35 GHz at 60 V/cm). The oscillations are associated with a shuttle-type electron motion in the Debye sphere of k-space; they are not heavily damped if the electron runaway is favored inside and restrained outside the Debye sphere. (WDM)

  7. Gallium self-diffusion in gallium arsenide: A study using isotope heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lei; Hsu, L.; Haller, E.E. [California Univ., Berkeley, CA (United States)]|[Lawrence Berkeley National Lab., CA (United States); Erickson, J.W. [Evans (Charles) and Associates, Redwood City, CA (United States); Fischer, A.; Eberl, K.; Cardona, M. [Max-Planck-Institut, Stuttgart (Germany)


    Ga self-diffusion was studied with secondary-ion mass spectroscopy in {sup 69}GaAs/{sup 71}GaAs isotope heterostructures grown by molecular beam epitaxy on GaAs substrates. Results show that the Ga self- diffusion coefficient in intrinsic GaAs can be described accurately with D = (43{+-}25 cm{sup 2}s{sup -1})exp(-4.24{+-}0.06 eV/k{sub B}T) over 6 orders of magnitude between 800 and 1225 C under As-rich condition. Experimental results combined with theoretical calculations strongly suggest Ga vacancy being the dominant native defect controlling the diffusion. No significant doping effects were observed in samples where the substrates were doped with Te up to 4x10{sup 17}cm{sup -3} or Zn up to 1x10{sup 19}cm{sup -3}.

  8. Computer Modeling, Characterization, and Applications of Gallium Arsenide Gunn Diodes in Radiation Environments

    Directory of Open Access Journals (Sweden)

    Wafaa Abd El-Basit


    Full Text Available The present paper reports on a trial to shed further light on the characterization, applications, and operation of radar speed guns or Gunn diodes on different radiation environments of neutron or γ fields. To this end, theoretical and experimental investigations of microwave oscillating system for outer-space applications were carried out. Radiation effects on the transient parameters and electrical properties of the proposed devices have been studied in detail with the application of computer programming. Also, the oscillation parameters, power characteristics, and bias current were plotted under the influence of different γ and neutron irradiation levels. Finally, shelf or oven annealing processes were shown to be satisfactory techniques to recover the initial characteristics of the irradiated devices.

  9. Structural features of indium antimonide quantum dots on the indium arsenide substrate

    Directory of Open Access Journals (Sweden)

    Liliya A. Sokura


    Full Text Available The properties of InSb/InAs quantum dots (QDs have been investigated by transmission electron microscopy (TEM. Specific features of diffraction contrast were discovered in plan-view TEM images of big (9–10 nm in height and 38–50 nm in diameter InSb QDs. To understand the origin of such distortions, a model of an InSb QD on InAs substrate containing a partial Frank dislocation (FD was developed and used for calculations of the displacement field and the subsequent diffraction image simulation of an InSb QD for the first time. The shape of the QD was established to have an insignificant influence on the magnitude of radial displacements. The insertion of a misfit defect (a partial Frank dislocation into the QD reduces the strain at the edges of the QD almost by 30%. The comparison of experimental and simulated data allowed us to explain the observed features of the moiré pattern in the image of a big InSb QD by the presence of a misfit defect at the QD-substrate interface.

  10. Digital Control of the Czochralski Growth of Gallium Arsenide-Controller Software Reference Manual (United States)


    response by means of two stacked PID controllers . The setpoint and actual data inputs of both controllers are to be connected in parallel; the output of...setpoints is obtained from two stacked PID controllers which permit to obtain a non- linear control response (compare chapter 4.5.1). The first PID...the "manu- al" setpoint can be chosen to lie close to the actually re- quired controller output, the PID controllers need only make small

  11. Origin of optical losses in gallium arsenide disk whispering gallery resonators

    CERN Document Server

    Parrain, David; Wang, Guillaume; Guha, Biswarup; Santos, Eduardo Gil; Lemaitre, Aristide; Senellart, Pascale; Leo, Giuseppe; Ducci, Sara; Favero, Ivan


    Whispering gallery modes in GaAs disk resonators reach half a million of optical quality factor. These high Qs remain still well below the ultimate design limit set by bending losses. Here we investigate the origin of residual optical dissipation in these devices. A Transmission Electron Microscope analysis is combined with an improved Volume Current Method to precisely quantify optical scattering losses by roughness and waviness of the structures, and gauge their importance relative to intrinsic material and radiation losses. The analysis also provides a qualitative description of the surface reconstruction layer, whose optical absorption is then revealed by comparing spectroscopy experiments in air and in different liquids. Other linear and nonlinear optical loss channels in the disks are evaluated likewise. Routes are given to further improve the performances of these miniature GaAs cavities.

  12. Indium arsenide as a material for biological applications: Assessment of surface modifications, toxicity, and biocompatibility (United States)

    Jewett, Scott A.

    III-V semiconductors such as InAs have recently been employed in a variety of applications where the electronic and optical characteristics of traditional, silicon-based materials are inadequate. InAs has a narrow band gap and very high electron mobility in the near-surface region, which makes it very attractive for high performance transistors, optical applications, and chemical sensing. However, InAs forms an unstable surface oxide layer in ambient conditions, which can corrode over time and leach toxic indium and arsenic components. Current research has gone into making InAs more attractive for biological applications through passivation of the surface by adlayer adsorption. In particular, wet-chemical methods are current routes of exploration due to their simplicity, low cost, and flexibility in the type of passivating molecule. This dissertation focuses on surface modifications of InAs using wet-chemical methods in order to further its use in biological applications. First, the adsorption of collagen binding peptides and mixed peptide/thiol adlayers onto InAs was assessed. X-ray photoelectron spectroscopy (XPS) along with atomic force microscopy (AFM) data suggested that the peptides successfully adsorbed onto InAs, but were only able to block oxide regrowth to a relatively low extent. This low passivation ability is due to the lack of covalent bonds of the peptide to InAs, which are necessary to effectively block oxide regrowth. The addition of a thiol, in the form of mixed peptide/thiol adlayers greatly enhanced passivation of InAs while maintaining peptide presence on the surface. Thiols form tight, covalent bonds with InAs, which prevents oxide regrowth. The presence of the collagen-binding peptide on the surface opens the door to subsequent modification with collagen or polyelectrolyte-based adlayers. Next, the stability and toxicity of modified InAs substrates were determined using inductively coupled plasma mass spectrometry (ICP-MS) and zebrafish studies. InAs substrates modified with a poly(ethylene glycol) (PEG) based adlayer showed the highest stability in physiological conditions by leaching the lowest amounts of indium and arsenic. Modified substrates also showed no toxicity to zebrafish after incubation for 120 hours. Overall, these findings suggest that a variety of adlayers can be functionalized onto InAs surfaces and successfully passivate the surface, along with decreasing InAs toxicity. Finally, we demonstrate how surface modifications can be applied to a different III-V semiconductor, GaN, in order to modulate cellular adhesion. Modification of GaN with a laminin-derived peptide increases the adhesion of PC12 neuronal cells and alters the physical morphology of the adhered cells. Additionally, no toxicity to cells is observed, further demonstrating the potential for employing III-V semiconductors in biological applications.

  13. Surface preparation for ALD of High-k dielectrics on indium gallium arsenide (United States)

    Melitz, Wilhelm

    The key for a successful gate-first process is when subsequent processing steps cannot degrade the semiconductor, the dielectric, or the oxide-semiconductor interfaces. For silicon, the only commercial ALD high-k fabrication process, which avoids processing induced damage, is a replacement gate process (a type of gate-last process). While preparing silicon for gate-last processing is straightforward, the key to a gate-last process for III-V semiconductors is the order and cleanliness of the III-V channel prior to dielectric deposition. Aggressive oxide thickness reduction (equivalent oxide thickness, or EOT, scaling) is needed to fabricate small gate length devices with small subthreshold swings. Furthermore, aggressive EOT scaling requires a very high uniform ALD nucleation density, with no pinholes due to surface contaminants. The key barrier to solving a very practical problem is a surface chemistry challenge: develop a chemical process which removes nearly all air induced defects and contaminants and leaves the III-V surface flat and electrically active for high nucleation density ALD gate oxide deposition, which unpins the Fermi level. The following study uses scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) to observe the removal of the oxide layer and restoration of the clean InGaAs surface reconstruction with atomic hydrogen cleaning, allowing for a gate-last or replacement-gate process. Along with surface cleaning STM and STS was used to characterize the initial passivation of InGaAs surfaces via ALD of trimethyl aluminum (TMA). The substrate temperature and initial surface reconstruction was critical to forming an unpinned passivation layer with a high nucleation density. A method was developed to use Kelvin probe force microscopy (KPFM) as a tool for insightful feedback on the electrostatics of scaled MOSFET devices. KPFM is a unique technique for providing two-dimensional potential profiles inside a working device. A procedure is described to obtain high-resolution KPFM results on ultra-high vacuum (UHV) cleaved III-V MOSCAPs.

  14. Computer modeling characterization, and applications of Gallium Arsenide Gunn diodes in radiation environments

    Energy Technology Data Exchange (ETDEWEB)

    El- Basit, Wafaa Abd; El-Ghanam, Safaa Mohamed; Kamh, Sanaa Abd El-Tawab [Electronics Research Laboratory, Physics Department, Faculty of Women for Arts, Science and Education, Ain-Shams University, Cairo (Egypt); Abdel-Maksood, Ashraf Mosleh; Soliman, Fouad Abd El-Moniem Saad [Nuclear Materials Authority, Cairo (Egypt)


    The present paper reports on a trial to shed further light on the characterization, applications, and operation of radar speed guns or Gunn diodes on different radiation environments of neutron or γ fields. To this end, theoretical and experimental investigations of microwave oscillating system for outer-space applications were carried out. Radiation effects on the transient parameters and electrical properties of the proposed devices have been studied in detail with the application of computer programming. Also, the oscillation parameters, power characteristics, and bias current were plotted under the influence of different γ and neutron irradiation levels. Finally, shelf or oven annealing processes were shown to be satisfactory techniques to recover the initial characteristics of the irradiated devices.

  15. Epitaxial growth of dilute nitride-arsenide compound semiconductors by molecular beam epitaxy (United States)

    Adamcyk, Martin

    InyGa1-yAs 1-xNx containing a small amount of nitrogen (x narrow bandgap semiconductor alloy that has advantageous properties for the fabrication of optoelectronic devices. In this thesis, we seek to improve the material quality of InGaAsN and GaAsN by studying how the epitaxial growth conditions affect both the structural and electronic properties of the alloy. We describe a novel RF plasma source based on a helical resonator design that was developed for the incorporation of nitrogen into GaAsN and InGaAsN thin films grown by molecular beam epitaxy. The plasma source is equipped with a baffle apparatus that decreases the ion content of the flux. We show how the structural and electronic properties of InGaAsN epilayers depend on the growth conditions. In situ light scattering measurements and atomic force microscopy show that a faceted surface morphology occurs when growth conditions increase adatom surface diffusion: slow growth rate, high substrate temperature and high V/III ratio. Large nitrogen concentrations also favour the faceted growth mode. The residual strain in relaxed InGaAsN films is found to be higher than in InGaAs epilayers having the same lattice mismatch. In situ substrate curvature measurements were used to monitor the strain state of the sample in real time during the growth. Ex situ transmission electron microscopy and x-ray diffraction measurements agree with the residual strain determined with the in situ monitor. These characterization results also indicate that threading dislocation glide is slower in InGaAsN than in InGaAs. Finally, we find that the electronic properties of InGaAsN are generally degraded with increasing nitrogen content. However, by choosing appropriate growth conditions, we demonstrate InGaAsN quantum wells with room temperature photoluminescence efficiencies that are comparable to InGaAs structures. These photoluminescence results may be related to the faceting transition that was observed during GaAsN growth. In contrast with the findings of other groups, rapid thermal anneals only moderately improve the photoluminescence intensity and line shape of InGaAsN single quantum wells. We observe peak intensity gains on the order of 2 after one minute anneals at 785°C. Hall measurements indicate that the electron mobility of Si-doped GaAsN is inversely proportional to the nitrogen content. We conclude that nitrogen-related neutral impurity scattering is the limiting factor in the electron mobility of GaAsN. The use of Bi as a surfactant during growth is shown to improve the surface morphology of GaAsN epilayers and the photoluminescence properties of InGaAsN single quantum wells. This work provides insight into some of the key issues that must be taken into account in the growth of dilute nitrides.

  16. Formation of defects at high temperature plastic deformation of gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Mikhnovich, V.V.


    The purpose of the present thesis consists in acquiring more concrete information concerning the mechanism of the movement of dislocations and types of defects that appear during the process of dislocation motion on the basis of systematic experimental studies of the GaAs deformation. Experimental studies concerning the dependence of the stress of the samples from their deformation at different values of the deformation parameters (like temperature and deformation speed) were conducted in this paper. To determine the concentration of defects introduced in samples during the deformation process the positron annihilation spectroscopy (PAS) method was used. The second chapter of this paper deals with models of movement of dislocations and origination of defects during deformation of the samples. In the third chapter channels and models of positron annihilation in the GaAs samples are investigated. In the forth chapter the used experimental methods, preparation procedure of test samples and technical data of conducted experiments are described. The fifth chapter shows the results of deformation experiments. The sixth chapter shows the results of positron lifetime measurements by the PAS method. In the seventh chapter one can find analyses of the values of defects concentration that were introduced in samples during deformation. (orig.)

  17. Two-valley Hydrodynamical Models for Electron Transport in Gallium Arsenide: Simulation of Gunn Oscillations

    Directory of Open Access Journals (Sweden)

    A. Marcello Anile


    Full Text Available To accurately describe non-stationary carrier transport in GaAs devices, it is necessary to use Monte Carlo methods or hydrodynamical (or energy transport models which incorporate population transfer between valleys.We present here simulations of Gunn oscillations in a GaAs diode based on two-valley hydrodynamical models: the classic Bløtekjær model and two recently developed moment expansion models. Scattering parameters within the models are obtained from homogeneous Monte Carlo simulations, and these are compared against expressions in the literature. Comparisons are made between our hydrodynamical results, existing work, and direct Monte Carlo simulations of the oscillator device.

  18. Gallium Arsenide detectors for X-ray and electron (beta particle) spectroscopy (United States)

    Lioliou, G.; Barnett, A. M.


    Results characterizing GaAs p+-i-n+ mesa photodiodes with a 10 μm i layer for their spectral response under illumination of X-rays and beta particles are presented. A total of 22 devices, having diameters of 200 μm and 400 μm, were electrically characterized at room temperature. All devices showed comparable characteristics with a measured leakage current ranging from 4 nA/cm2 to 67 nA/cm2 at an internal electric field of 50 kV/cm. Their unintentionally doped i layers were found to be almost fully depleted at 0 V due to their low doping density. 55Fe X-ray spectra were obtained using one 200 μm diameter device and one 400 μm diameter device. The best energy resolution (FWHM at 5.9 keV) achieved was 625 eV using the 200 μm and 740 eV using the 400 μm diameter device, respectively. Noise analysis showed that the limiting factor for the energy resolution of the system was the dielectric noise; if this noise was eliminated by better design of the front end of the readout electronics, the achievable resolution would be 250 eV. 63Ni beta particle spectra obtained using the 200 μm diameter device showed the potential utility of these detectors for electron and beta particle detection. The development of semiconductor electron spectrometers is important particularly for space plasma physics; such devices may find use in future space missions to study the plasma environment of Jupiter and Europa and the predicted electron impact excitation of water vapor plumes from Europa hypothesized as a result of recent Hubble Space Telescope (HST) UV observations.

  19. Peculiarities of defect and impurity behaviour in gallium arsenide during surface gettering

    CERN Document Server

    Gorelenok, A T; Kamanin, A V; Kokhanovskii, S I; Mezdrogina, M M; Shmidt, N M; Vasilev, V I


    Spatial redistribution of anti-site defects after surface gettering of GaAs wafers coated by an yttrium film has been found. It has been established that both one- and two-side coating of the GaAs wafer with an yttrium film followed by a heat treatment allows a high-resistivity (n = 10 sup 1 sup 2 cm sup - sup 3) material to be obtained with uniform distributions of both electrons and the effective hole lifetime in a depth of 1.6 mm. The material obtained is suitable for creating Schottky barriers and structures for use in both high-power devices and x-ray detectors.

  20. Molecular beam epitaxial growth of tungsten layers embedded in single crystal gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Harbison, J.P.; Hwang, D.M.; Levkoff, J.; Derkits G.E. Jr.


    We have been able to fabricate structures which consist of a thin (approx.10 nm) polycrystalline W film embedded in surrounding single crystalline GaAs by molecular beam epitaxy (MBE) using an electron beam evaporation source to deposit W metal in an ultrahigh vacuum MBE growth chamber. The entire deposition sequence can take place at elevated temperature (625--700 /sup 0/C) due to the nonreactive nature of W with respect to GaAs. Reflective high-energy diffraction and transmission electron microscopy indicate that the single crystal GaAs overgrowth proceeds by seeding from the GaAs layer beneath the W through spontaneously occurring perforations in the W layer.

  1. The scaling of the effective band gaps in indium-arsenide quantum dots and wires. (United States)

    Wang, Fudong; Yu, Heng; Jeong, Sohee; Pietryga, Jeffrey M; Hollingsworth, Jennifer A; Gibbons, Patrick C; Buhro, William E


    Colloidal InAs quantum wires having diameters in the range of 5-57 nm and narrow diameter distributions are grown from Bi nanoparticles by the solution-liquid-solid (SLS) mechanism. The diameter dependence of the effective band gaps (DeltaE(g)s) in the wires is determined from photoluminescence spectra and compared to the experimental results for InAs quantum dots and rods and to the predictions of various theoretical models. The DeltaE(g) values for InAs quantum dots and wires are found to scale linearly with inverse diameter (d(-1)), whereas the simplest confinement models predict that DeltaE(g) should scale with inverse-square diameter (d(-2)). The difference in the observed and predicted scaling dimension is attributed to conduction-band nonparabolicity induced by strong valence-band-conduction-band coupling in the narrow-gap InAs semiconductor.

  2. Physico-Chemical Modeling of the Sulfo-Arsenide System of Gold Bearing Ore Deposits

    Directory of Open Access Journals (Sweden)

    N. V. VILOR


    Full Text Available The existence of gold-arsenic mineralization, the presence of enhanced concentrations of gold in arsenopyrite, especially in its fine grain varieties showing positive gold-arsenic ratios in gold-quartz and gold-pyritic ores indicate the important role of As in hydrothermal gold transport. The most accessible approach to the investigation of these complicated systems is provided by physico-chemical modeling. In the present work the isobaric isothermal potentials (DG°f 298 of thioarsenides, the most important group of arsenic compounds in the solution, have been determined and refined on the basis of the creation of physico-chemical models using the data on the As sulfide solubility in the As – S – O – H system. The data obtained were reconciled with the thermodynamic data available by solving the reverse thermodynamic problem. Numerical physico-chemical modeling has been carried out for a series of tests in both pure water and hydrogen sulfide solutions (0.0032 - 0.011m with the initial pH values from 1.14 to 8.4 in the 25-250°C temperature range under saturated water steam pressure. The computer-calculated constants are included in the modeling of tests on orpiment dissolution in sulfide-sodium solutions. The As2S3ryst solubility in the 25-250°C temperature range has first been obtained. A specific feature of the process is a sharp increase in dissolved arsenic total concentration as the pH value of the hydrothermal phase rises from 4 to 6-7. Concentration increases and gradient decreases with temperature rise. The predominant forms are represented by thioarsenites. Just as in acidic, so in weakly and moderately alkaline solutions the orpiment solubility is caused by the concentration combination of thioarsenous acid H3AsS3 and its oligomers H4As2S50 and H2As2S40. At a temperature of over 200-250°C these concentrations can be compared only with that of the AsOH (HS2o complex of mixed composition.

  3. A customizable commercial miniaturized 320×256 indium gallium arsenide shortwave infrared camera (United States)

    Huang, Shih-Che; O'Grady, Matthew; Groppe, Joseph V.; Ettenberg, Martin H.; Brubaker, Robert M.


    The design and performance of a commercial short-wave-infrared (SWIR) InGaAs microcamera engine is presented. The 0.9-to-1.7 micron SWIR imaging system consists of a room-temperature-TEC-stabilized, 320x256 (25 μm pitch) InGaAs focal plane array (FPA) and a high-performance, highly customizable image-processing set of electronics. The detectivity, D*, of the system is greater than 1013 cm-√Hz/W at 1.55 μm, and this sensitivity may be adjusted in real-time over 100 dB. It features snapshot-mode integration with a minimum exposure time of 130 μs. The digital video processor provides real time pixel-to-pixel, 2-point dark-current subtraction and non-uniformity compensation along with defective-pixel substitution. Other features include automatic gain control (AGC), gamma correction, 7 preset configurations, adjustable exposure time, external triggering, and windowing. The windowing feature is highly flexible; the region of interest (ROI) may be placed anywhere on the imager and can be varied at will. Windowing allows for high-speed readout enabling such applications as target acquisition and tracking; for example, a 32x32 ROI window may be read out at over 3500 frames per second (fps). Output video is provided as EIA170-compatible analog, or as 12-bit CameraLink-compatible digital. All the above features are accomplished in a small volume < 28 cm3, weight < 70 g, and with low power consumption < 1.3 W at room temperature using this new microcamera engine. Video processing is based on a field-programmable gate array (FPGA) platform with a soft-embedded processor that allows for ease of integration/addition of customer-specific algorithms, processes, or design requirements. The camera was developed with the high-performance, space-restricted, power-conscious application in mind, such as robotic or UAV deployment.

  4. Nuclear magnetization in gallium arsenide quantum dots at zero magnetic field. (United States)

    Sallen, G; Kunz, S; Amand, T; Bouet, L; Kuroda, T; Mano, T; Paget, D; Krebs, O; Marie, X; Sakoda, K; Urbaszek, B


    Optical and electrical control of the nuclear spin system allows enhancing the sensitivity of NMR applications and spin-based information storage and processing. Dynamic nuclear polarization in semiconductors is commonly achieved in the presence of a stabilizing external magnetic field. Here we report efficient optical pumping of nuclear spins at zero magnetic field in strain-free GaAs quantum dots. The strong interaction of a single, optically injected electron spin with the nuclear spins acts as a stabilizing, effective magnetic field (Knight field) on the nuclei. We optically tune the Knight field amplitude and direction. In combination with a small transverse magnetic field, we are able to control the longitudinal and transverse components of the nuclear spin polarization in the absence of lattice strain--that is, in dots with strongly reduced static nuclear quadrupole effects, as reproduced by our model calculations.

  5. Nuclear magnetization in gallium arsenide quantum dots at zero magnetic field (United States)

    Sallen, G.; Kunz, S.; Amand, T.; Bouet, L.; Kuroda, T.; Mano, T.; Paget, D.; Krebs, O.; Marie, X.; Sakoda, K.; Urbaszek, B.


    Optical and electrical control of the nuclear spin system allows enhancing the sensitivity of NMR applications and spin-based information storage and processing. Dynamic nuclear polarization in semiconductors is commonly achieved in the presence of a stabilizing external magnetic field. Here we report efficient optical pumping of nuclear spins at zero magnetic field in strain-free GaAs quantum dots. The strong interaction of a single, optically injected electron spin with the nuclear spins acts as a stabilizing, effective magnetic field (Knight field) on the nuclei. We optically tune the Knight field amplitude and direction. In combination with a small transverse magnetic field, we are able to control the longitudinal and transverse components of the nuclear spin polarization in the absence of lattice strain—that is, in dots with strongly reduced static nuclear quadrupole effects, as reproduced by our model calculations.

  6. Gallium arsenide p+–n–p+-structures with impoverished base area

    Directory of Open Access Journals (Sweden)

    Karimov A. V.


    Full Text Available It is displayed experimentally, that the current transport’s mechanism through p+GaAs–nGaAs–p+GaAs-structure is formed by injection-tunnel and generation-recombination mechanisms. Injection-tunnel current prevails at modulation of base’s part which contains defects, and generation-recombination currents are determinative at modulation of base’s part with lesser defectiveness. p+GaAs–nGaAs–p+GaAs-structures are of interest for creating voltage suppressors and electronic switches on their base.

  7. Microwave Semiconductor Research - Materials, Devices and Circuits and Gallium Arsenide Ballistic Electron Transistors. (United States)


    Eastman, D.W. Woodard, C.E.C. Wood and T.R. AuCoin, DRC , Santa Barbara, CA (June 22-24, 1981). 1. "Experimental Studies of Ballistic Transport in...prepared for publication. These results are fundamental in character and have been published in " highly regarded, refereed technical journals. The...High-Speed Logic", R.A. Sadler and L.F. Eastman, DRC , University of Vermont, Burlington, VT (June 20-22, 1983). 30. "High-Speed Logic at 300 K with Self

  8. Ballistic magnetotransport and spin-orbit interaction in indium antimonide and indium arsenide quantum wells (United States)

    Peters, John Archibald

    While charge transport in a two-dimensional electron system (2DES) is fairly well understood, many open experimental and theoretical questions related to the spin of electrons remain. The standard 2DES embedded in Alx Ga1-xAs/GaAs heterostructures is most likely not the optimal candidate for such investigations, since spin effects as well as spin-orbit interactions are small perturbations compared to other effects. This has brought InSb- and InAs-based material systems into focus due to the possibility of large spin-orbit interactions. By utilizing elastic scattering off a lithographic barrier, we investigate the consequence of spin on different electron trajectories observed in InSb and InAs quantum wells. We focus on the physical properties of spin-dependent reflection in a 2DES and we present experimental results demonstrating a method to create spin-polarized beams of ballistic electrons in the presence of a lateral potential barrier. Spatial separation of electron spins using cyclotron motion in a weak magnetic is also achieved via transverse magnetic focusing. We also explore electrostatic gating effects in InSb/InAlSb heterostructures and demonstrate the effective use of polymethylglutarimide (PMGI) as a gate dielectric for InSb. The dependence on temperature and on front gate voltage of mobility and density are also examined, revealing a strong dependence of mobility on density. As regards front gate action, there is saturation in the density once it reaches a limiting value. Further, we investigate antidot lattices patterned on InSb/InAlSb and InAs/AlGaSb heterostructures. At higher magnetic fields, ballistic commensurability features are displayed while at smaller magnetic fields localization and quantized oscillatory phenomena appear, with marked differences between InSb and InAs. Interesting localization behavior is exhibited in InSb, with the strength of the localization peak decreasing exponentially with temperature between 0.4 K and 50 K. InAs on the other hand show a strikingly modified antilocalization behavior, with small-period oscillations in magnetic field superposed. We also observe Altshuler-Aronov-Spivak oscillations in InSb and InAs antidot lattices and extract the phase and spin coherence lengths in InAs. Our experimental results are discussed in the light of localization and anti localization as probes of disorder and of spin dephasing mechanisms, modified by the artificial potential of the antidot lattice.

  9. Superconducting properties of “111” type LiFeAs iron arsenide single crystals

    Institute of Scientific and Technical Information of China (English)


    LiFeAs single crystal has been grown with superconducting transition temperature Tc comparable to that of polycrystals.A magnetic transition is found at about 160 K,which suggests the correlation of superconductivity with spin wave density.

  10. Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide

    DEFF Research Database (Denmark)

    Taboryski, Rafael Jozef; Clausen, Thomas; Kutchinsky, jonatan


    We have fabricated and characterized planar superconductor-semiconductor-superconductor (S-Sm-S) junctions with a high quality (i.e. low barrier) interface between an n++ modulation doped conduction layer in MBE grown GaAs and in situ deposited Al electrodes. The Schottky barrier at the S...

  11. A simple soft lithographic nanopatterning of gold on gallium arsenide via galvanic displacement. (United States)

    Lim, Hyuneui; Noh, Jung-Hyun; Choi, Dae-Geun; Kim, Wan-Doo; Maboudian, Roya


    Nanoscale patterning of gold layers on GaAs substrate is demonstrated using a combination of soft lithographic molding and galvanic displacement deposition. First, an electroless deposition method has been developed to plate gold on GaAs with ease and cost-effectiveness. The electroless metallization process is performed by dipping the GaAs substrates into a gold salt solution without any reducing agents or additives. The deposition proceeds via galvanic displacement in which gold ions in the aqueous solution are reduced by electrons arising from the GaAs substrate itself. The deposition rate, surface morphology and adhesion property can be modulated by the plating parameters such as the choice of acids and the immersion time. Second, soft lithographic patterning of nanodots, nanorings, and nanolines are demonstrated on GaAs substrates with hard-polydimethylsiloxane (h-PDMS) mold and plasma etching. This method can be easily applied to the metallization and nanopatterning of gold on GaAs surfaces.

  12. Growth and characterization of epitaxial aluminum layers on gallium-arsenide substrates for superconducting quantum bits (United States)

    Tournet, J.; Gosselink, D.; Miao, G.-X.; Jaikissoon, M.; Langenberg, D.; McConkey, T. G.; Mariantoni, M.; Wasilewski, Z. R.


    The quest for a universal quantum computer has renewed interest in the growth of superconducting materials on semiconductor substrates. High-quality superconducting thin films will make it possible to improve the coherence time of superconducting quantum bits (qubits), i.e., to extend the time a qubit can store the amplitude and phase of a quantum state. The electrical losses in superconducting qubits highly depend on the quality of the metal layers the qubits are made from. Here, we report on the epitaxy of single-crystal Al (011) layers on GaAs (001) substrates. Layers with 110 nm thickness were deposited by means of molecular beam epitaxy at low temperature and monitored by in situ reflection high-energy electron diffraction performed simultaneously at four azimuths. The single-crystal nature of the layers was confirmed by ex situ high-resolution x-ray diffraction. Differential interference contrast and atomic force microscopy analysis of the sample’s surface revealed a featureless surface with root mean square roughness of 0.55 nm. A detailed in situ study allowed us to gain insight into the nucleation mechanisms of Al layers on GaAs, highlighting the importance of GaAs surface reconstruction in determining the final Al layer crystallographic orientation and quality. A highly uniform and stable GaAs (001)-(2× 4) reconstruction reproducibly led to a pure Al (011) phase, while an arsenic-rich GaAs (001)-(4× 4) reconstruction yielded polycrystalline films with an Al (111) dominant orientation. The near-atomic smoothness and single-crystal character of Al films on GaAs, in combination with the ability to trench GaAs substrates, could set a new standard for the fabrication of superconducting qubits.

  13. Energy Levels and Predicted Absorption Spectra of Rare-Earth Ions in Rare-Earth Arsenides (United States)


    2 copies) Departmento de Fisica Ames, IA 50011 Attn: A. da Gama Attn: G. F. de SA Argonne National Laboratory Attn: 0. L. Malta Attn: W. T. Carnall...da UFPE, Cidade Universitaria 9700 South Ca.s Avenue 50,000, Recife, Pe, Brasil Argonne, IL 60439 26 Distribution (cont’d) Howard University

  14. Ultra-Low Power Fiber-Coupled Gallium Arsenide Photonic Crystal Cavity Electro-Optical Modulator (United States)


    200 nA corresponding to voltages of 0, 0.67, and 1 V (inset of Fig. 2(b)). As can be seen, the cavity resonance blueshifts monotonically even for...these ultra- low injection levels. In fact, 50% of the blueshift occurs in the first 20 nA of injection before saturating at approximately 200 nA (Fig...with a better MBE growth method as minimal leakage current was observed for similar devices in [13]. Nonetheless, the total blueshift of 110 pm is

  15. Type-II indium arsenide/gallium antimonide superlattices for infrared detectors (United States)

    Mohseni, Hooman

    In this work, the unique properties of type-II InAs/GaSb heterojunctions were utilized for the realization of novel infrared photodetectors with higher operating temperature, detectivity and uniformity than the commonly available infrared detectors. This effort was concentrated on two major devices: uncooled infrared detectors in the long wavelength infrared (LWIR) range, and cooled devices in the very long wavelength infrared (VLWIR) range. Uncooled infrared (IR) detectors are required for low-cost, lightweight sensor systems that have many industrial and medical applications. Commercially available uncooled IR sensors use ferroelectric or microbolometer detectors. These sensors are inherently slow and cannot detect rapid signal changes needed for high-speed infrared systems. Some of the applications which require a fast detector (tau LIDARs. Although photon detectors have frequency responses in the megahertz range, their high temperature detectivity is severely degraded due to high Auger recombination rates. Bandgap engineering was used in order to suppress Auger recombination at room temperature in type-II superlattices. Our experimental results demonstrated nearly one order of magnitude lower Auger recombination rate at room temperature in these type-II superlattices compared to typical intrinsic detectors, such as HgCdTe, with similar bandgap. Uncooled detectors based on the engineered superlattices showed a detectivity of 1.3 x 108g cmHz 1/2/W at 11 Et m, which is comparable to microbolometers. However, the measured response time of the detectors was more than five orders of magnitude faster than microbolometers. In parallel, devices for operation in the VLWIR were developed. High-performance infrared detectors with cutoff wavelength above 14 mum are highly needed for many space-based applications. Commonly used detectors are extrinsic silicon and HgCdTe. However, the former has to be cooled below 10K, and the latter do not have good uniformity in the VLWIR range. We demonstrated high-performance type-II superlattice photodiodes with cutoff wavelength up to 25 mum and excellent bandgap uniformity over a three-inch wafer area. Devices with a 50% cutoff wavelength of 16 mum showed a nearly 50% internal quantum efficiency and background limited infrared photodetector (BLIP) performance at T = 60 K for the first time.

  16. Pseudogap from preformed Cooper pairs in a platinum-iron-arsenide superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Surmach, M.A.; Brueckner, F.; Kamusella, S.; Sarkar, R.; Portnichenko, P.Y.; Klauss, H.H.; Inosov, D.S. [TU Dresden (Germany); Park, J.T. [MLZ, Garching (Germany); Luetkens, H.; Biswas, P. [PSI, Villigen (Switzerland); Choi, W.J.; Seo, Y.I.; Kwon, Y.S. [DGIST, Daegu (Korea, Republic of)


    Using a combination of μSR, INS and NMR, we investigated the novel iron-based superconductor with a triclinic crystal structure (CaFe{sub 1-x}Pt{sub x}As){sub 10}Pt{sub 3}As{sub 8} (T{sub c}=13 K). The T-dependence of the superfluid density from our μSR relaxation-rate measurements indicates the presence of two superconducting gaps. According to our INS measurements, commensurate spin fluctuations are centered at the (π, 0) wave vector. Their intensity is unchanged across T{sub c}, indicating the absence of a spin resonance typical for many Fe-based superconductors. Instead, we observed a peak in the spin-excitation spectrum around ℎω{sub 0}=7 meV at the same wave vector, which persists above T{sub c}. The temperature dependence of magnetic intensity at 7 meV revealed an anomaly around T*=45 K related to the disappearance of this new mode. A suppression of the spin-lattice relaxation rate, 1/T{sub 1}T, observed by NMR immediately below T* without any notable subsequent anomaly at T{sub c}, indicates that T* could mark the onset of a pseudogap in (CaFe{sub 1-x}Pt{sub x}As){sub 10}Pt{sub 3}As{sub 8}, which is likely associated with the emergence of preformed Cooper pairs.

  17. Hot-Electron Degradation of Gallium Arsenide Metal-Semiconductor Field-Effect Transistors. (United States)

    Tkachenko, Yevgeniy A.


    The physical mechanism of gradual degradation of GaAs MESFETs during RF overdrive is investigated in detail. A hot-electron effect was found responsible for this so-called "power slump" problem. Hot electrons produced by a large drain-gate voltage swing, tunnel from the MESFET channel and get trapped in SiN. These trapped electrons (i) increase surface depletion, hence reduce maximum channel current, transconductance and transistor gain, (ii) increase knee voltage through an increase in series channel resistance, (iii) relax gate-drain field distribution, thereby suppressing avalanche breakdown, (iv) decrease gate-drain capacitance, hence rm S_{22} under open-channel condition, and (v) increase surface leakage through trap hopping in SiN. The damage to SiN can only be partially recovered by deep UV illumination or 200^circrm C anneal. The evidence supports that trapping occurs in the bulk SiN, instead of at the GaAs/SiN interface. The possible chemical reaction responsible for this trap formation is breaking of the Si-H bond in SiN. An analytical theory of hot-electron effects, which combines hot-electron trapping with gate-drain breakdown and pinched-channel electro-luminescence, was developed and verified using experimental data and numerical simulations. Based on this theory, the rate of hot electron trapping was obtained and the threshold energy for trap formation was determined. The square-root time dependence given by the theory and the threshold energy of 1.9 eV were found consistent with gate current and electro-luminescence measurements. Numerical analysis was consistent with a trap density of the order of 5times10^{12}/rm cm^2 over a distance of approximately 0.1 murm m from the gate toward the drain, and it predicted the experimentally observed open-channel current reduction and gate-drain field relaxation. The spatial distribution of trapped electrons was directly observed by a novel high-voltage electron-beam-induced -current imaging technique. It confirmed the model's prediction. These results can be incorporated into large-signal transistor models for computer-aided circuit design. Such models would quantify trade-off between performance and reliability. An accelerated qualification procedure for the hot-electron-induced degradation trend is devised. This is based on the high-frequency waveform probing and high -sensitivity electro-luminescence measurements. Hot-electron-induced degradation was also found to take place in pseudomorphic high-electron-mobility transistors (PHEMT). The basic signatures of PHEMT degradation are similar to those of MESFETs, however some differences exist due to the structural differences between them. For PHEMT, in addition to SiN surface passivation, hot-electron traps may be formed in the AlGaAs layer under the gate. In addition, various temperature-activated degradation modes are more strongly coupled in the case of PHEMT, which requires analyzing them separately from the field-activated mode.

  18. A Review of Subsurface Behavior of Plutonium and Americium at the 200-PW-1/3/6 Operable Units

    Energy Technology Data Exchange (ETDEWEB)

    Cantrell, Kirk J.; Riley, Robert G.


    This report begins with a brief summary of the history and current status of 200-PW-1/3/6 OUs in section 2.0. This is followed by a description of our concentual model of Pu/Am migration at the 200-PW-1/3/6 OUs, during both past artificial recharge conditions and current natural recharge condictions (section 3.0). Section 4.0 discusses data gaps and information needs. The final section (section 5.0) provides recommendations for futher work to address the data gaps and information needs identified in section 4.0.

  19. Input contribution and vertical migration of plutonium, americium and cesium in lake sediments (Belham Tarn, Cumbria, UK)

    Energy Technology Data Exchange (ETDEWEB)

    Michel, H.; Barci-Funel, G.; Barci, V.; Ardisson, G. [Lab. de Radiochimie et de Radioecologie, Univ. de Nice Sophia Antipolis, Nice (France)


    The record of the global atmospheric fallout could be found in the lake sediments. A mass balance for fallout radionuclides in Blelham Tarn and its catchment is established. The sediment activity contribution is coming from direct atmospheric fallout and from indirect atmospheric fallout via the catchment. The catchement activity is conveyed to the sediment by the rivers and the direct streaming. A comparison of the fallout and the sediment inventory allows the activity estimation of these different contributions and to understand the mobility of these elements on the catchment and in the sediments. The study of activity profile in sediment core allows to characterise the different radioactive events occurred in the past. For the lake Blelham, the results show two cesium activity peaks and only one peak for transuranic activities. The deepest peaks correspond to the atmospheric nuclear test fallout in the sixties (1963) and the second peak to the Chernobyl accident (1986). The activity ratio {sup 239-240}Pu/{sup 137}Cs allows estimating the ratio between cesium activities in sediments coming from these two events. Plutonium and cesium diffusion coefficients are calculated with a simple analytical model. (orig.)

  20. Analysis of cascade impactor and EPA method 29 data from the americium/curium pilot melter system

    Energy Technology Data Exchange (ETDEWEB)

    Zamecnik, J.R.


    The offgas system of the Am/Cm pilot melter at TNX was characterized by measuring the particulate evolution using a cascade impactor and EPA Method 29. This sampling work was performed by John Harden of the Clemson Environmental Technologies Laboratory, under SCUREF Task SC0056. Elemental analyses were performed by the SRTC Mobile Laboratory.Operation of the Am/Cm melter with B2000 frit has resulted in deposition of PbO and boron compounds in the offgas system that has contributed to pluggage of the High Efficiency Mist Eliminator (HEME). Sampling of the offgas system was performed to quantify the amount of particulate in the offgas system under several sets of conditions. Particulate concentration and particle size distribution were measured just downstream of the melter pressure control air addition port and at the HEME inlet. At both locations, the particulate was measured with and without steam to the film cooler while the melter was idled at about 1450 degrees Celsius. Additional determinations were made at the melter location during feeding and during idling at 1150 degrees Celsius rather than 1450 degrees Celsius (both with no steam to the film cooler). Deposition of particulates upstream of the melter sample point may have, and most likely did occur in each run, so the particulate concentrations measured do no necessarily reflect the total particulate emission at the melt surface. However, the data may be used in a relative sense to judge the system performance.

  1. Rapid selective separation of americium/curium\\ud from simulated nuclear forensic matrices using\\ud triazine ligands


    Higginson, Matthew A.; Thompson, Paul; Marsden, Olivia J.; Livens, Francis R.; Harwood, Laurence M.; Lewis, Frank W.; Hudson, Michael J.; Heath, Sarah L.


    In analysis of complex nuclear forensic samples\\ud containing lanthanides, actinides and matrix elements,\\ud rapid selective extraction of Am/Cm for quantification\\ud is challenging, in particular due the difficult separation\\ud of Am/Cm from lanthanides. Here we present\\ud a separation process for Am/Cm(III) which is achieved\\ud using a combination of AG1-X8 chromatography followed\\ud by Am/Cm extraction with a triazine ligand. The ligands\\ud tested in our process were CyMe4-BTPhen, CyMe4-\\u...


    Energy Technology Data Exchange (ETDEWEB)

    Li, D.; Kaplan, D.


    The Savannah River Site (SRS) has conducted performance assessment (PA) calculations to determine the risk associated with closing liquid waste tanks. The PA estimates the risk associated with a number of scenarios, making various assumptions. Throughout all of these scenarios, it is assumed that the carbon-steel tank liners holding the liquid waste do not sorb the radionuclides. Tank liners have been shown to form corrosion products, such as Fe-oxyhydroxides (Wiersma and Subramanian 2002). Many corrosion products, including Fe-oxyhydroxides, at the high pH values of tank effluent, take on a very strong negative charge. Given that many radionuclides may have net positive charges, either as free ions or complexed species, it is expected that many radionuclides will sorb to corrosion products associated with tank liners. The objective of this report was to conduct a literature review to investigate whether Pu, U, Np, Am and Tc would sorb to corrosion products on tank liners after they were filled with reducing grout (cementitious material containing slag to promote reducing conditions). The approach was to evaluate radionuclides sorption literature with iron oxyhydroxide phases, such as hematite ({alpha}-Fe{sub 2}O{sub 3}), magnetite (Fe{sub 3}O{sub 4}), goethite ({alpha}-FeOOH) and ferrihydrite (Fe{sub 2}O{sub 3} {center_dot} 0.5H{sub 2}O). The primary interest was the sorption behavior under tank closure conditions where the tanks will be filled with reducing cementitious materials. Because there were no laboratory studies conducted using site specific experimental conditions, (e.g., high pH and HLW tank aqueous and solid phase chemical conditions), it was necessary to extend the literature review to lower pH studies and noncementitious conditions. Consequently, this report relied on existing lower pH trends, existing geochemical modeling, and experimental spectroscopic evidence conducted at lower pH levels. The scope did not include evaluating the appropriateness of K{sub d} values for the Fe-oxyhydroxides, but instead to evaluate whether it is a conservative assumption to exclude this sorption process of radionuclides onto tank liner corrosion products in the PA model. This may identify another source for PA conservatism since the modeling did not consider any sorption by the tank liner.

  3. Optical Bistable Arrays: Prospects for Ultimate Performances, (United States)


  4. Formation of indium arsenide atomic wires on the In/Si(111)-4 × 1 surface (United States)

    Guerrero-Sánchez, J.


    Density functional theory calculations have been applied to describe the formation of InAs atomic-size wires on the In/Si(111)-4 × 1 surface. Two different coverages, ¼ ML and ½ ML, were considered. We have taken in to consideration different high symmetry sites for As adsorption. At ¼ ML coverage, in the energetically stable configuration, As and In atoms form atomic wires. Upon increasing the coverage up to ½ ML of As, a pair of InAs atomic wires are formed. Surface formation energy calculations help to clarify the stability ranges of these structures: for arsenic poor conditions the stable configuration corresponds to the In/Si(111)-4 × 1 surface (with no As atoms). Increasing the arsenic content, for intermediate to rich As conditions, results in the formation of an InAs wire. At the arsenic rich limit, the formation of two InAs wires is favorable. The InAs wires are highly symmetric, and charge density distributions and projected density of states show the covalent character of the Insbnd As bonds of the wire. These results demonstrate that the In/Si(111)-4 × 1 surface may be used as a substrate to growth quasi-unidimensional InAs wires.

  5. Transient Velocity Assessment in Gallium Arsenide, and of Other GaAs Characteristics Related to Device Functions (United States)


    RW-809 ^ C^> Scientific Program Officer: Mr . Sven A. Roosild, DARPA/DSO 1400 Wilson Blvd. Arlington, VA 22209 Contractor: Oregon Graduate...of acoustic phonons, non-parabolicity of the conduction band minimum and intervaliey scattering through the admixture of p-type states. He concluded...llarrlta 1985 LEC (HP) 50 5 Goutereaux et_ al. lUrrltt 1985 LEC (HP) 50 5 Ilakemore et_ al. MOCSEMHAD 1985 IXC (HP) 50 0.5 Dobrllla et al. MRS /5F0 1985

  6. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices (United States)

    Mascarenhas, Angelo


    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  7. Gallium arsenide (GaAs) (001) after sublimation of arsenic (As) thin-film cap, by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Engelhard, Mark H.; Lyubinetsky, Andre; Baer, Don R.


    Survey and high energy resolution spectra are reported for MBE grown GaAs (001) that had been capped with As. The As cap was removed by heating in situ prior to analysis. The current data expands upon the spectral regions previously reported in Surface Science Spectra. High energy resolution spectral features reported include: 2p, 3s, 3p, 3d, and L3M45M45 peaks for As; 2p, 3s, 3p, 3d, and L3M45M45 peaks for Ga; and the valance band region.

  8. Technology characteristics and concerns arising in the design and fabrication of an entire signal processor using gallium arsenide integrated circuits (United States)

    Naused, Barbara A.; Samson, Mark L.; Schwab, Daniel J.; Gilbert, Barry K.

    Various GaAs transistor and gate technologies that have been developed since 1980 are analyzed. The characteristics of GaAs logic gates and ICs and the buffered FET logic, Shottky diode FET logic, direct coupled FET logic, and heterojunction integrated injection logic used to implement GaAs gate arrays of LSI complexity are described. The use of digital GaAs in a complex target signal processor, the Advanced Onboard Signal Processor (AOSP), is studied. Data from the testing of GaAs components for the AOSP at the wafer probe, package, and assembled circuit board levels are examined.

  9. Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys (United States)


    calculated using following relations: H H s qR r N and s H H R . (3.8) Temperature-dependent Hall ( TDH ...freeze, leaving the material highly resistive. If the material is highly degenerate, TDH measurements will reveal the degenerate layer at low

  10. Electrical detection of the biological interaction of a charged peptide via gallium arsenide junction-field-effect transistors (United States)

    Lee, Kangho; Nair, Pradeep R.; Alam, Muhammad A.; Janes, David B.; Wampler, Heeyeon P.; Zemlyanov, Dmitry Y.; Ivanisevic, Albena


    GaAs junction-field-effect transistors (JFETs) are utilized to achieve label-free detection of biological interaction between a probe transactivating transcriptional activator (TAT) peptide and the target trans-activation-responsive (TAR) RNA. The TAT peptide is a short sequence derived from the human immunodeficiency virus-type 1 TAT protein. The GaAs JFETs are modified with a mixed adlayer of 1-octadecanethiol (ODT) and TAT peptide, with the ODT passivating the GaAs surface from polar ions in physiological solutions and the TAT peptide providing selective binding sites for TAR RNA. The devices modified with the mixed adlayer exhibit a negative pinch-off voltage (VP) shift, which is attributed to the fixed positive charges from the arginine-rich regions in the TAT peptide. Immersing the modified devices into a TAR RNA solution results in a large positive VP shift (>1 V) and a steeper subthreshold slope (˜80 mV/decade), whereas "dummy" RNA induced a small positive VP shift (˜0.3 V) without a significant change in subthreshold slopes (˜330 mV/decade). The observed modulation of device characteristics is analyzed with analytical modeling and two-dimensional numerical device simulations to investigate the electronic interactions between the GaAs JFETs and biological molecules.

  11. Electrical detection of the biological interaction of a charged peptide via gallium arsenide junction-field-effect transistors


    Lee, Kangho; Nair, Pradeep R.; Alam, Muhammad A.; Janes, David B.; Wampler, Heeyeon P; Zemlyanov, Dmitry; Ivanisevic, Albena


    GaAs junction-field-effect transistors (JFETs) are utilized to achieve label-free detection of biological interaction between a probe transactivating transcriptional activator (TAT) peptide and the target trans-activation-responsive (TAR) RNA. The TAT peptide is a short sequence derived from the human immunodeficiency virus-type 1 TAT protein. The GaAs JFETs are modified with a mixed adlayer of 1-octadecanethiol (ODT) and TAT peptide, with the ODT passivating the GaAs surface from polar ions ...

  12. Superconductivity at 43 K in Samarium-arsenide Oxides $SmFeAsO_{1-x}F_x$


    Chen, X. H.; Wu, T; Wu, G.; Liu, R. H.; Chen, H.; Fang, D. F.


    Since the discovery of high-transition temperature ($T_c$) superconductivity in layered copper oxides, extensive efforts have been devoted to explore the higher $T_c$ superconductivity. However, the $T_c$ higher than 40 K can be obtained only in the copper oxide superconductors so far. The highest reported value of $T_c$ for non-copper-oxide bulk superconductivity is 39 K in $MgB_2$.\\cite{jun} The $T_c$ of about 40 K is close to or above the theoretical value predicted from BCS theory.\\cite{m...

  13. Superconductivity at 36 K in gadolinium-arsenide oxides GdO1-xFxFeAs

    Institute of Scientific and Technical Information of China (English)

    CHENG Peng; FANG Lei; YANG Huan; ZHU XiYu; MU Gang; LUO HuiQian; WANG ZhaoSheng; WEN HaiHu


    In this paper we report the fabrication and superconducting properties of GdO1-xFxFeAs.It was found that when x is equal to 0.17,GdO0.83F0.17FeAs is a su-perconductor with the onset transition temperature Tonc≈36.6 K.Resistivity anomaly near 130 K was observed for all samples up to x = 0.17,and such a phenomenon is similar to that of LaO1-xFxFeAs.Hall coefficient indicates that GdO1-xFxFeAs is conducted by electron-like charge carriers.

  14. Superconductivity at 36 K in gadolinium-arsenide oxides GdO1-xFxFeAs

    Institute of Scientific and Technical Information of China (English)


    In this paper we report the fabrication and superconducting properties of GdO1-xFxFeAs. It was found that when x is equal to 0.17, GdO0.83F0.17FeAs is a su-perconductor with the onset transition temperature Tcon ≈ 36.6 K. Resistivity anomaly near 130 K was observed for all samples up to x = 0.17, and such a phenomenon is similar to that of LaO1-xFxFeAs. Hall coefficient indicates that GdO1-xFxFeAs is conducted by electron-like charge carriers.

  15. Thin films of gallium arsenide on low-cost substrates. Final report, July 5, 1976--July 2, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Ruth, R.P.; Dapkus, P.D.; Dupuis, R.D.; Campbell, A.G.; Johnson, R.E.; Manasevit, H.M.; Moudy, L.A.; Yang, J.J.; Yingling, R.D.


    The metalorganic chemical vapor deposition (MO-CVD) technique has been applied to the growth of thin films of GaAs and GaAlAs on inexpensive polycrystalline or amorphous substrate materials (glasses, glass-ceramics, alumina ceramics, and metals) for use in fabrication of large-area low-cost photovoltaic device structures. Trimethylgallium (TMG), arsine (AsH/sub 3/), and trimethylaluminum (TMAl) are mixed in appropriate concentrations at room temperature in the gaseous state and pyrolyzed at the substrate, which is heated in a vertical reactor chamber to temperature in the range 600 to 800/sup 0/C, to produce the desired film composition and properties. Of ten candidate low-cost substrates initially identified for investigation, Corning Code 0317 glass and composites of CVD Ge/glass and sputtered Mo/glass were found to be the most satisfactory, the latter eventually serving as a reference substrate against which to compare the performance of other substrates. Single-crystal window-type solar cells, polycrystalline Schottky-barrier cells, and deposited-junction polycrystalline cells have been grown, fabricated, and characterized. Epitaxial GaAlAs/GaAs p-n junction cells with thin (approx. 500A) Ga/sub 0/ /sub 2/Al/sub 0/ /sub 8/As windows and GaAs:Zn - GaAs:Se junctions were made with AMO efficiencies as high as 12.8 percent with no AR coating. Schottky barrier cells with efficiencies of 2.25 percent AMO (no AR coating) have been made on n/n polycrystalline GaAs structures on Mo/glass composite substrates, with short-circuit current densities up to 12.5 mA/cm/sup 2/. Also, results of analyses of material and processing costs associated with fabrication of thin-film GaAlAs/GaAs solar cells by the MO-CVD process are discussed.

  16. Development of a unique laboratory standard indium gallium arsenide detector for the 500 to 1700 micron spectral region, phase 2 (United States)

    Ban, Vladimir S.; Olsen, Gregory H.


    In the course of this work, 5 mm diameter InGaAs pin detectors were produced which met or exceeded all of the goals of the program. The best results achieved were: shunt resistance of over 300 K ohms; rise time of less than 300 ns; contact resistance of less than 20 ohms; quantum efficiency of over 50 percent in the 0.5 to 1.7 micron range; and devices were maintained and operated at 125 C without deterioration for over 100 hours. In order to achieve the goals of this program, several major technological advances were realized, among them: successful design, construction and operation of a hydride VPE reactor capable of growing epitaxial layers on 2 inch diameter InP substrates with a capacity of over 8 wafers per day; wafer processing was upgraded to handle 2 inch wafers; a double layer Si3N4/SiO2 antireflection coating which enhances response over the 0.5 to 1.7 micron range was developed; a method for anisotropic, precisely controlled CH4/H2 plasma etching for enhancement of response at short wavelengths was developed; and electronic and optical testing methods were developed to allow full characterization of detectors with size and spectral response characteristics. On the basis of the work and results achieved in this program, it is concluded that large size, high shunt resistance, high quantum efficiency InGaAs pin detectors are not only feasible but also manufacturable on industrial scale. This device spans a significant portion of visible and near infrared spectral range and it will allow a single detector to be used for the 0.5 to 1.7 micron spectral region, rather than the presently used silicon (for 0.5 to 1.1 microns) and germanium (0.8 to 1.7 microns).

  17. Investigation of the chemical explosion of an ion exchange resin column and resulting americium contamination of personnel in the 242-Z building, August 30, 1976

    Energy Technology Data Exchange (ETDEWEB)


    As a result of an explosion in the Waste Treatment Facility, 242-Z Building, 200 West Area of the Hanford Reservation on August 30, 1976, the Manager of the Richland Operations Office (RL), Energy Research and Development Administration (ERDA), appointed an ERDA Committee to conduct a formal investigation and to prepare a report on their findings of this occurrence. The Committee was instructed to conduct the investigation in accordance with ERDAMC 0502, insofar as circumstances would permit, to cover and explain technical elements of the casual sequence(s) of the occurrence, and to describe management systems which should have or could have prevented the occurrence. This report is the result of the investigation and presents the conclusions of the review.

  18. Aqueous complexation of citrate with neodymium(III) and americium(III): a study by potentiometry, absorption spectrophotometry, microcalorimetry, and XAFS. (United States)

    Brown, M Alex; Kropf, A Jeremy; Paulenova, Alena; Gelis, Artem V


    The aqueous complexation of Nd(III) and Am(III) with anions of citrate was studied by potentiometry, absorption spectrophotometry, microcalorimetry, and X-ray absorption fine structure (XAFS). Using potentiometric titration data fitting the metal-ligand (L) complexes that were identified for Nd(III) were NdHL, NdL, NdHL2, and NdL2; a review of trivalent metal-citrate complexes is also included. Stability constants for these complexes were calculated from potentiometric and spectrophotometric titrations. Microcalorimetric results concluded that the entropy term of complex formation is much more dominant than the enthalpy. XAFS results showed a dependence in the Debye-Waller factor that indicated Nd(iii)-citrate complexation over the pH range of 1.56-6.12.

  19. Americium(III) oxidation by copper(III) periodate in nitric acid solution as compared with the action of Bi(V) compounds of sodium, lithium, and potassium

    Energy Technology Data Exchange (ETDEWEB)

    Sinkov, Sergey I.; Lumetta, Gregg J. [Pacific Northwest National Laboratory, Radiochemical Processing Lab., Richland, WA (United States)


    The oxidative action of a Cu(III) periodate compound toward Am(III) in nitric acid was studied. The extent of oxidation of Am(III) to Am(VI) was investigated using a constant initial Cu(III)-to-Am(III) molar ratio of 10:1 and varying nitric acid concentrations from 0.25 to 3.5 mol/L. From 0.25 to 3 mol/L HNO3, more than 98% of the Am(III) was oxidized to Am(VI); however, at 3.5 mol/L HNO{sub 3}, the conversion to Am(VI) was only 80%. Increasing the Cu(III)-to-Am(III) molar ratio to 20:1 in 3.5 mol/L HNO{sub 3} resulted in 98% conversion to Am(VI). For comparison, oxidation of Am(III) with NaBiO{sub 3} was studied at 3.5 mol/L HNO{sub 3} and the same stoichiometric excess of Bi(V) oxidant over Am(III) (stoichiometric ratio of 3.33:1). With NaBiO{sub 3}, the extent of Am(III) conversion to Am(VI) was only 19%, while with the Cu(III) compound this value was found to be about 4 times higher under otherwise identical conditions. Similar results were obtained with other Bi(V) salts. These results show that the Cu(III) periodate compound is a superior oxidant to NaBiO{sub 3}, yielding rapid conversion to Am(VI) in a homogeneous acidic solution, and is, therefore, an excellent candidate for further development of Am separation systems.

  20. Chemical speciation of strontium, americium, and curium in high level waste: Predictive modeling of phase partitioning during tank processing. Annual progress report, October 1996--September 1997

    Energy Technology Data Exchange (ETDEWEB)

    Felmy, A.R. [Pacific Northwest National Lab., Richland, WA (US); Choppin, G. [Florida State Univ., Tallahassee, FL (US)


    'The program at Florida State University was funded to collaborate with Dr. A. Felmy (PNNL) on speciation in high level wastes and with Dr. D. Rai (PNNL) on redox of Pu under high level waste conditions. The funding provided support for 3 research associates (postdoctoral researchers) under Professor G. R. Choppin as P.I. Dr. Kath Morris from U. Manchester (Great Britain), Dr. Dean Peterman and Dr. Amy Irwin (both from U. Cincinnati) joined the laboratory in the latter part of 1996. After an initial training period to become familiar with basic actinide chemistry and radiochemical techniques, they began their research. Dr. Peterman was assigned the task of measuring Th-EDTA complexation prior to measuring Pu(IV)-EDTA complexation. These studies are associated with the speciation program with Dr. Felmy. Drs. Morris and Irwin initiated research on redox of plutonium with agents present in the Hanford Tanks as a result of radiolysis or from use in separations. The preliminary results obtained thus far are described in this report. It is expected that the rate of progress will continue to increase significantly as the researchers gain more experience with plutonium chemistry.'

  1. Studies on the feasibility of using completely incinerable reagents for the single-cycle separation of americium(III) from simulated high-level liquid waste

    Energy Technology Data Exchange (ETDEWEB)

    Nayak, P.K.; Kumaresan, R.; Venkatesan, K.A.; Subramanian, G.G.S.; Prathibha, T.; Syamala, K.V.; Selvan, B. Robert; Rajeswari, S.; Antony, M.P.; Rao, P.R. Vasudeva [Indira Gandhi Centre for Atomic Research, Kalpakkam (India). Fuel Chemistry Div.; Chaurasia, Shivkumar; Bhanage, B.M. [Institute of Chemical Technology, Mumbai (India)


    The extraction and stripping behavior of various metal ions present in the fast reactor simulated high-level liquid waste (FR-SHLLW) was studied using a solvent phase composed of a neutral extractant, N,N,-didodecyl-N',N'-dioctyl-3-oxapentane-1,5-diamide (D{sup 3}DODGA) and an acidic extractant, di-2-ethylhexyl diglycolamic acid (HDEHDGA) in n-dodecane (n-DD). The third phase formation behavior of the solvent formulation D{sup 3}DODGA + HDEHDGA/n-DD, was studied when it was contacted with FR-SHLLW, and the concentration of neutral and acidic extractant needed to avoid the third phase formation was optimized. The distribution ratio of various metal ions present in FR-SHLLW was measured in a solution of 0.1 M D{sup 3}DODGA + 0.2 M HDEHDGA/n-DD. The extraction of Am(III) was accompanied by the co-extraction of lanthanides and unwanted metal ions such as Zr(IV), Y(III), and Pd(II). A procedure was developed to minimize the extraction of unwanted metal ions by using aqueous soluble complexing agents in FR-SHLLW. Based on those results, the counter-current mixer-settler run was performed in a 20-stage mixer-settler. Quantitative extraction of Am(III), Ln(III), Y(III), and Sr(II) in 0.1 M D{sup 3}DODGA + 0.2 M HDEHDGA/n-DD was observed. The recovery of Am(III) from the loaded organic phase was carried out by the optimized aqueous formulation composed of 0.01 M diethylenetriaminepentaacetic acid (DTPA) + 0.5 M citric acid (CA) at pH 1.5. The stripping of Am(III) was accompanied by co-stripping of some early lanthanides. However the later lanthanides (Eu(III) and beyond) were not back extracted to Am(III) product. Therefore, the studies foresee the possibility of intra-lanthanides as well as lanthanide-actinide separation in a single-processing cycle.

  2. Proceedings of the specialists' meeting on nuclear data of plutonium and americium isotopes for reactor applications. [BNL, Nov. 20-21, 1978

    Energy Technology Data Exchange (ETDEWEB)

    Chrien, R E [ed.


    Separate abstracts were prepared for 17 of the papers in these Proceedings. The remaining six have already been cited in ERA, and can be located by referring to the entry CONF-781174-- in the Report Number Index. (RWR)

  3. Determination of Neptunium, Americium and Curium in Spent Nuclear Fuel Samples by Alpha Spectrometry Using {sup 239}Np and {sup 243}Am as a Spike and a Tracer

    Energy Technology Data Exchange (ETDEWEB)

    Jeo, Kih-Soo; Song, Byung-Chul; Kim, Young-Bok; Han, Sun-Ho; Jeon, Young-Shin; Jung, Euo-Chang; Jee, Kwang-Yong [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)


    Determination of actinide elements and fission products in spent nuclear fuels is of importance for a burnup determination and source term evaluation. Especially, the amounts of uranium and plutonium isotopes are used for the evaluation of a burnup credit in spent nuclear fuels. Additionally, other actinides such as Np, Am and Cm in spent nuclear fuel samples is also required for the purposes mentioned above. In this study, {sup 237}Np, {sup 241}Am and {sup 244}Cm were determined by an alpha spectrometry for the source term data for high burnup spent nuclear fuels ranging from 37 to 62.9 GWD/MtU as a burnup. Generally, mass spectrometry has been known as the most powerful method for isotope determinations such as high concentrations of uranium and plutonium. However, in the case of minor actinides such as Np, Am and Cm, alpha spectrometry would be recommended instead. Determination of the transuranic elements in spent nuclear fuel samples is different from that for environmental samples because the amount of each nuclide in the spent fuel samples is higher and the relative ratios between each nuclide are also different from those for environmental samples. So, it is important to select an appropriate tracer and an optimum sample size depending on the nuclides and analytical method. In this study {sup 237}Np was determined by an isotope dilution alpha(gamma) spectrometry using {sup 239}Np as a spike, and {sup 241}Am and curium isotopes were determined by alpha spectrometry using {sup 243}Am as a tracer. The content of each nuclide was compared with that by the Origen-2 code.

  4. Anisotropy of iron-platinum-arsenide Ca10(PtnAs8)(Fe2-xPtxAs2)5 single crystals (United States)

    Yuan, F. F.; Sun, Y.; Zhou, W.; Zhou, X.; Ding, Q. P.; Iida, K.; Hühne, R.; Schultz, L.; Tamegai, T.; Shi, Z. X.


    The upper critical field Hc2 anisotropy of Ca10(PtnAs8)(Fe2-xPtxAs2)5 (n = 3, 4) single crystals with long FeAs interlayer distance (d) was studied by angular dependent resistivity measurements. A scaling of the angular dependent resistivity was realized for both single crystals using the anisotropic Ginzburg-Landau (AGL) approach with an appropriate anisotropy parameter γ. The AGL scaling parameter γ increases with decreasing temperature and reaches a value of about 10 at 0.8Tc for both single crystals. These values are much larger than those of other iron-based superconductors (FeSCs). Remarkably, the values of γ2 show an almost linear increase with the FeAs/FeSe interlayer distance d for FeSCs. Compared to cuprates, FeSCs are less anisotropic, indicating that two dimensionality of the superconductivity is intrinsically weak.

  5. Characterization and modeling of the intrinsic properties of 1.5-micrometer gallium indium nitrogen arsenic antimonide/gallium arsenide laser (United States)

    Goddard, Lynford


    Low cost access to optical communication networks is needed to satisfy the rapidly increasing demands of home-based high-speed Internet. Existing light sources in the low-loss 1.2--1.6mum telecommunication wavelength bandwidth are prohibitively expensive for large-scale deployment, e.g. incorporation in individual personal computers. Recently, we have extended the lasing wavelength of room-temperature CW GaInNAs(Sb) lasers grown monolithically on GaAs by MBE up to 1.52mum in an effort to replace the traditional, more expensive, InP-based devices. Besides lower cost wafers, GaInNAs(Sb) opto-electronic devices have fundamental material advantages over InP-based devices: a larger conduction band offset which reduces temperature sensitivity and enhances differential gain, a lattice match to a material with a large refractive index contrast, i.e. AlAs, which decreases the necessary number of mirror pairs in DBRs for VCSELs, and native oxide apertures for current confinement. High performance GaInNAs(Sb) edge-emitting lasers, VCSELs, and DFB lasers have been demonstrated throughout the entire telecommunication band. In this work, we analyze the intrinsic properties of the GaInNAsSb material system, e.g. recombination, gain, band structure and renormalization, and efficiency. Theoretical modeling is performed to calculate a map of the bandgap and effective masses for various material compositions. We also present device performance results, such as: room temperature CW threshold densities below 450A/cm2, quantum efficiencies above 50%, and over 425mW of total power from a SQW laser when mounted epi-up and minimally packaged. These results are generally 2--4x better than previous world records for GaAs based devices at 1.5mum. The high CW power and low threshold exhibited by these SQW lasers near 1.5mum make feasible many novel applications, such as broadband Raman fiber amplifiers and uncooled WDM at the chip scale. Device reliability of almost 500 hours at 200mW CW output power has also been demonstrated. Comparative experiments using innovative characterization techniques, such as: the multiple section absorption/gain method to explore the band structure, as well as the Z-parameter to analyze the dominant recombination processes, have identified the physical mechanisms responsible for improved performance. Also, by measuring the temperature dependence of relevant laser parameters, we have been able to simulate device operation while varying temperature and device geometry.

  6. Measurement and comparison of AC parameters of silicon (BSR and BSFR) and gallium arsenide (GaAs/Ge) solar cells used in space applications

    Energy Technology Data Exchange (ETDEWEB)

    Anil Kumar, R.; Suresh, M.S. [ISRO Satellite Centre, ISRO, Bangalore 560, 017 Kolhapur (India); Nagaraju, J. [Department of Instrumentation, Indian Institute of Science, Bangalore 560, 012 Kolhapur (India)


    The AC parameters of silicon (BSR and BSFR) solar cells and GaAs/Ge solar cell have been measured using impedance spectroscopy. Each cell capacitance, dynamic resistance and series resistance were measured and compared. GaAs/Ge solar cell has shown only the transition capacitance throughout its operating range while silicon (BSR and BSFR) solar cells exhibited both transition and diffusion capacitance. The theoretical and experimental values of dynamic resistance were compared and found in good agreement while the diode factor in silicon solar cells varies from 2 to 1, where as in GaAs/Ge solar cell it varies from 4 to 2 to 1.

  7. Estimation of various scattering parameters and 2-DEG mobilities from electron mobility calculations in the three conduction bands , L and X of gallium arsenide

    Indian Academy of Sciences (India)

    Sonal Singhal; A K Saxena; S Dasgupta


    The electron drift mobility in conduction band of GaAs has been calculated before, but for the first time, we have made attempts to estimate the electron mobilities in higher energy L and X minima. We have also calculated the value of mobility of two-dimensional electron gas needed to predict hetero-structure device characteristics using GaAs. Best scattering parameters have been derived by close comparison between experimental and theoretical mobilities. Room temperature electron mobilities in , L and X valleys are found to be nearly 9094, 945 and 247 cm2 /V-s respectively. For the above valleys, the electron masses, deformation potentials and polar phonon temperatures have been determined to be (0.067, 0.22, 0.39m 0 ), (8.5, 9.5, 6.5 eV), and (416, 382, 542 K) as best values, respectively. The 2-DEG electron mobility in minimum increases to 1.54 × 106 from 1.59 × 105 cm2 /V-s (for impurity concentration of 1014 cm-3) at 10 K. Similarly, the 2-DEG electron mobility values in L and X minima are estimated to be 2.28 × 105 and 1.44 × 105 cm2 /V-s at 10 K, which are about ∼ 4.5 and ∼ 3.9 times higher than normal value with impurity scattering present.

  8. Drug-induced gingival enlargement: biofilm control and surgical therapy with gallium-aluminum-arsenide (GaAlAs) diode laser-A 2-year follow-up. (United States)

    de Oliveira Guaré, Renata; Costa, Soraya Carvalho; Baeder, Fernando; de Souza Merli, Luiz Antonio; Dos Santos, Maria Teresa Botti Rodrigues


    Drug-induced gingival enlargement has been reported in patients treated with various types of anticonvulsant drugs, and is generally associated with the presence of plaque, gingival inflammation, and a genetic predisposition. Effective treatment includes daily oral hygiene and periodic professional prophylaxis. However, in some patients, surgical removal of the gingival tissue overgrowth becomes necessary. The patient in this case report was mentally impaired and had severe drug-induced gingival enlargement. This report describes the initial protocol, the gingivectomy, and a 2-year follow-up. A diode laser was used as an effective and safe method to remove the patient's overgrown gingival tissue.

  9. Synergic phototoxic effect of visible light or Gallium-Arsenide laser in the presence of different photo-sensitizers on Porphyromonas gingivalis and Fusobacterium nucleatum

    Directory of Open Access Journals (Sweden)

    Habibollah Ghanbari


    Conclusion: Within the limitations of this study, the synergic phototoxic effect of visible light in combination with each of the photosensitizers on P. gingivalis and F. nucleatum. However, the synergic phototoxic effect of laser exposure and hydrogen peroxide and curcumin as photosensitizers on F. nucleatum was not shown.

  10. Electronic Properties of III-V Semiconductors under [111] Uniaxial Strain; a Tight-Binding Approach: I. Arsenides and Gallium Phosphide

    Directory of Open Access Journals (Sweden)

    Miguel E. Mora-Ramos


    Full Text Available Empleando un esquema de cálculo tight-binding que usa una base de orbitales sp3s*d5, se estudian propiedades de la estructura electrónica de un grupo de materiales semiconductores IIIV los cuales son de notable interés para la tecnología de dispositivos electrónicos y optoelectrónicos. En específico, se analiza la influencia sobre estas propiedades de una tensión aplicada según la dirección cristalográfica [111], haciendo uso de una formulación basada en la teoría de la elasticidad para establecer las posiciones relativas de los iones vecinos más próximos. Especial atención se presta a la inclusión del efecto de deformación interna de la red cristalina. Para cada material de los estudiados presentamos las dependencias de las brechas energéticas asociadas a los puntos L, X y L de la zona de Brillouin como funciones de la tensión uniaxial en AlAs, GaAs, InAs y GaP. Asimismo, reportamos expresiones de ajuste para los valores de las masas efectivas de conducción en esos cuatro materiales. La comparación de la variación de la brecha de energía en X para el GaP, calculada con nuestro modelo, y recientes resultados experimentales para la transición indirecta entre la banda de huecos pesados y la banda X de conducción arroja una muy buena concordancia.

  11. Effect of Heat Treatment on Electrical Properties and Charge Collection Efficiency of X-Ray Sensors Based on Chrome-Compensated Gallium Arsenide (United States)

    Zarubin, A. N.; Kolesnikova, I. I.; Lozinskaya, A. D.; Novikov, V. A.; Skakunov, M. S.; Tolbanov, O. P.; Tyazhev, A. V.; Shemeryankina, A. V.


    We present the results of experimental studies of the dependences of the specific resistance, charge collection efficiency, product of the mobility on the lifetime (μ×τ)n, and current-voltage characteristics on the heat treatment regimes of X-ray Me-GaAs:Cr-Me-sensors. Experimental samples were the pad-sensors with the area of 0.1-0.25 cm2 and sensitive-layer thickness in the range of 400-500 μm. The values of (μ×τ)n were evaluated by measuring the dependence of the charge collection efficiency on the bias voltage when exposed to gamma rays from the source of 241Am. It is shown that heat treatment in the temperature range 200-500°C does not lead to a significant degradation of properties of Me-GaAs:Cr-Me-sensors and can be used in the manufacturing technology of matrix detectors of ionizing radiation.

  12. Nursing of 37 acute hydrogent arsenide poisoning cases%急性砷化氢中毒的急救与护理37例

    Institute of Scientific and Technical Information of China (English)

    梁晓婷; 吴东


    @@ 砷化氢是毒性极强的有害气体,短期内吸入较高浓度的砷化氢气体可引起急性血管内溶血,严重者可出现急性肾功能衰竭、上消化道出血(UGH)、中毒性脑病、中毒性心肌病等一系列严重的并发症[1].抢救不及时,护理不妥当,死亡率极高.2000年10月~2002年9月,我科救治急性砷化氢中毒患者37例,效果满意,并与41例非中毒病人进行对照,旨在探讨急性砷化氢中毒患者的抢救及护理措施,提高救治水平.现将抢救与护理体会总结如下.

  13. Thin films of gallium arsenide on low-cost substrates. Quarterly technical progress report No. 8 and topical report No. 3, April 2-July 1, 1978

    Energy Technology Data Exchange (ETDEWEB)

    Ruth, R.P.; Dapkus, P.D.; Dupuis, R.D.; Johnson, R.E.; Manasevit, H.M.; Moudy, L.A.; Yang, J.J.; Yingling, R.D.


    The seventh quarter of work on the contract is summarized. The metalorganic chemical vapor deposition (MO-CVD) technique has been applied to the growth of thin films of GaAs and GaAlAs on inexpensive polycrystalline or amorphous substrate materials (primarily glasses and metals) for use in fabrication of large-area low-cost photovoltaic device structures. Trimethylgallium (TMG), arsine (AsH/sub 3/), and trimethylaluminum (TMAl) are mixed in appropriate concentrations at room temperature in the gaseous state and pyrolyzed at the substrate, which is heated in a vertical reactor chamber to temperatures of 725 to 750/sup 0/C, to produce the desired film composition and properties. The technical activities during the quarter were concentrated on (1) a continuing evaluation of various graphite materials as possible substrates for MO-CVD growith of the polycrystalline GaAs solar cells; (2) attempts to improve the quality (especially the grain size) of polycrystalline GaAs films on Mo sheet and Mo/glass substrates by using HCl vapor during the MO-CVD growith process; (3) further studies of the transport properties of polycrystalline GaAs films, wth emphasis on n-type films; (4) continuing investigations of the properties of p-n junctions in polycrystalline GaAs, with emphasis on the formation and properties of p/sup +//n/n/sup +/ deposited structures; and (5) assembling apparatus and establishing a suitable technique for producing TiO/sub 2/ layers for use as AR coatings on GaAs cells. Progress is reported. (WHK)

  14. Nucleation, propagation, electronic levels and elimination of misfit dislocations in III-V semiconductor interfaces. Final report, September 1, 1986--August 31, 1993

    Energy Technology Data Exchange (ETDEWEB)

    Ast, D.G.; Watson, G.P.; Matragrano, M.


    Misfit dislocations in gallium arsenides, indium arsenides, and zinc selenides are discussed. The growth of strained epitaxial layers, isolation and nucleation, thermal stability, and electronic and structural characteristics of misfit dislocations are described.

  15. The crystal structure of synthetic kutinaite, Cu14Ag6As7

    DEFF Research Database (Denmark)

    Karanovic, Ljiljana; Poleti, Dejan; Makovicky, Emil;


    kutinaite, X-ray diffraction, powder method, crystal structure, icosahedral alloy, arsenide, metal clusters......kutinaite, X-ray diffraction, powder method, crystal structure, icosahedral alloy, arsenide, metal clusters...

  16. Interaction and transport of actinides in natural clay rock with consideration of humic substances and clay organics. Characterization and quantification of the influence of clay organics on the interaction and diffusion of uranium and americium in the clay. Joint project

    Energy Technology Data Exchange (ETDEWEB)

    Bernhard, Gert [Helmholtz-Zentrum Dresden-Rossendorf e.V. (Germany). Inst. of Radiochemistry; Schmeide, Katja; Joseph, Claudia; Sachs, Susanne; Steudtner, Robin; Raditzky, Bianca; Guenther, Alix


    The objective of this project was the study of basic interaction processes in the systems actinide - clay organics - aquifer and actinide - natural clay - clay organics - aquifer. Thus, complexation, redox, sorption and diffusion studies were performed. To evaluate the influence of nitrogen, phosphorus and sulfur containing functional groups of humic acid (HA) on the complexation of actinides in comparison to carboxylic groups, the Am(III) and U(VI) complexation by model ligands was studied by UV-Vis spectroscopy and TRLFS. The results show that Am(III) is mainly coordinated via carboxylic groups, however, probably stabilized by nitrogen groups. The U(VI) complexation is dominated by carboxylic groups, whereas nitrogen and sulfur containing groups play a minor role. Phosphorus containing groups may contribute to the U(VI) complexation by HA, however, due to their low concentration in HA they play only a subordinate role compared to carboxylic groups. Applying synthetic HA with varying sulfur contents (0 to 6.9 wt.%), the role of sulfur functionalities of HA for the U(VI) complexation and Np(V) reduction was studied. The results have shown that sulfur functionalities can be involved in U(VI) humate complexation and act as redox-active sites in HA for the Np(V) reduction. However, due to the low content of sulfur in natural HA, its influence is less pronounced. In the presence of carbonate, the U(VI) complexation by HA was studied in the alkaline pH range by means of cryo-TRLFS (-120 C) and ATR FT-IR spectroscopy. The formation of the ternary UO{sub 2}(CO{sub 3}){sub 2}HA(II){sup 4-} complex was detected. The complex formation constant was determined with log {beta}{sub 0.1} M = 24.57 {+-} 0.17. For aqueous U(VI) citrate and oxalate species, luminescence emission properties were determined by cryo-TRLFS and used to determine stability constants. The existing data base could be validated. The U(VI) complexation by lactate, studied in the temperature range 7 to 65 C, was found to be endothermic and entropy-driven. In contrast, the complex stability constants determined for U(VI) humate complexation at 20 and 40 C are comparable, however, decrease at 60 C. For aqueous U(IV) citrate, succinate, mandelate and glycolate species stability constants were determined. These ligands, especially citrate, increase solubility and mobility of U(IV) in solution due to complexation. The U(VI) sorption onto crushed Opalinus Clay (OPA, Mont Terri, Switzerland) was studied in the absence and presence of HA or low molecular weight organic acids, in dependence on temperature and CO2 presence using OPA pore water as background electrolyte. Distribution coefficients (K{sub d}) were determined for the sorption of U(VI) and HA onto OPA with (0.0222 {+-} 0.0004) m{sup 3}/kg and (0.129 {+-} 0.006) m{sup 3}/kg, respectively. The U(VI) sorption is not influenced by HA ({<=}50 mg/L), however, decreased by low molecular weight organic acids ({>=} 1 x 10{sup -5} M), especially by citrate and tartrate. With increasing temperature, the U(VI) sorption increases both in the absence and in the presence of clay organics. The U(VI) diffusion in compacted OPA is not influenced by HA at 25 and 60 C. Predictions of the U(VI) diffusion show that an increase of the temperature to 60 C does not accelerate the migration of U(VI). With regard to uranium-containing waste, it is concluded that OPA is suitable as host rock for a future nuclear waste repository since OPA has a good retardation potential for U(VI). (orig.)

  17. Monitored Natural Attenuation of Inorganic Contaminants in Ground Water Volume 3 Assessment for Radionuclides IncludingTritium, Radon, Strontium, Technetium, Uranium, Iodine, Radium, Thorium, Cesium, and Plutonium-Americium (United States)

    The current document represents the third volume of a set of three volumes that address the technical basis and requirements for assessing the potential applicability of MNA as part of a ground-water remedy for plumes with nonradionuclide and/or radionuclide inorganic contamina...

  18. Study of plutonium and americium contamination in agricultural area, radiological impact caused by consumption of vegetables of this area; Estudio de la contaminacion de plutonio y americio en un area agricola, impacto radiologico ocasionado por consumo de vegetales contaminados

    Energy Technology Data Exchange (ETDEWEB)

    Espinosa, Assuncion; Aragon, Antonio; Cruz, Berta de la; Gutierrez, Jose [Centro de Investigaciones Energeticas Medioambientales y Tecnologicas, Madrid (Spain). Dept. de Impacto Ambiental de la Energia


    The transuranide concentration has been studied for 30 years in vegetable production, crops in wide extensions and in private-owned farms, all of them situated within the Pu-contaminated area of Palomares due to an air accident in 1966. Based on these studies, a preliminary estimation of the radiological risk caused by the consumption of these products by the inhabitants was possible. The results show that most of the fruits present a surface contamination, which disappears or is significantly reduced when they are washed. The contamination present in edible parts of the vegetables, as well as the contamination of other products included in the diet, has facilitated the estimation of the effective dose for ingestion and the committed effective dose for 50 years for the inhabitants. The main conclusions are: those plants, whose cultivation period is less than a year, present a low level of contamination; the green parts of the plants have a higher contamination than the fruits; the Pu soil to plant transfer factor is very low. In general, those plants that have remained in the contaminated land for several years present a high contamination level; the ingestion of products from Palomares does not represent an important risk for the population, even in the case that the products were totally consumed by a critical group.( author)

  19. Supported liquid inorganic membranes for nuclear waste separation

    Energy Technology Data Exchange (ETDEWEB)

    Bhave, Ramesh R; DeBusk, Melanie M; DelCul, Guillermo D; Delmau, Laetitia H; Narula, Chaitanya K


    A system and method for the extraction of americium from radioactive waste solutions. The method includes the transfer of highly oxidized americium from an acidic aqueous feed solution through an immobilized liquid membrane to an organic receiving solvent, for example tributyl phosphate. The immobilized liquid membrane includes porous support and separating layers loaded with tributyl phosphate. The extracted solution is subsequently stripped of americium and recycled at the immobilized liquid membrane as neat tributyl phosphate for the continuous extraction of americium. The sequestered americium can be used as a nuclear fuel, a nuclear fuel component or a radiation source, and the remaining constituent elements in the aqueous feed solution can be stored in glassified waste forms substantially free of americium.

  20. Analysis and Design of a Gated Envelope Feedback Technique for Automatic Hardware Reconfiguration of RFIC Power Amplifiers, with Full On-Chip Implementation in Gallium Arsenide Heterojunction Bipolar Transistor Technology (United States)

    Constantin, Nicolas Gerard David

    In this doctoral dissertation, the author presents the theoretical foundation, the analysis and design of analog and RF circuits, the chip level implementation, and the experimental validation pertaining to a new radio frequency integrated circuit (RFIC) power amplifier (PA) architecture that is intended for wireless portable transceivers. A method called Gated Envelope Feedback is proposed to allow the automatic hardware reconfiguration of a stand-alone RFIC PA in multiple states for power efficiency improvement purposes. The method uses self-operating and fully integrated circuitry comprising RF power detection, switching and sequential logic, and RF envelope feedback in conjunction with a hardware gating function for triggering and activating current reduction mechanisms as a function of the transmitted RF power level. Because of the critical role that RFIC PA components occupy in modern wireless transceivers, and given the major impact that these components have on the overall RF performances and energy consumption in wireless transceivers, very significant benefits stem from the underlying innovations. The method has been validated through the successful design of a 1.88GHz COMA RFIC PA with automatic hardware reconfiguration capability, using an industry renowned state-of-the-art GaAs HBT semiconductor process developed and owned by Skyworks Solutions, Inc., USA. The circuit techniques that have enabled the successful and full on-chip embodiment of the technique are analyzed in details. The IC implementation is discussed, and experimental results showing significant current reduction upon automatic hardware reconfiguration, gain regulation performances, and compliance with the stringent linearity requirements for COMA transmission demonstrate that the gated envelope feedback method is a viable and promising approach to automatic hardware reconfiguration of RFIC PA's for current reduction purposes. Moreover, in regard to on-chip integration of advanced PA control functions, it is demonstrated that the method is better positioning GaAs HBT technologies, which are known to offer very competitive RF performances but inherently have limited integration capabilities. Finally, an analytical approach for the evaluation of inter-modulation distortion (IMD) in envelope feedback architectures is introduced, and the proposed design equations and methodology for IMD analysis may prove very helpful for theoretical analyses, for simulation tasks, and for experimental work.

  1. Inelastic neutron scattering study of a nonmagnetic collapsed tetragonal phase in nonsuperconducting CaFe2As2: evidence of the impact of spin fluctuations on superconductivity in the iron-arsenide compounds. (United States)

    Soh, J H; Tucker, G S; Pratt, D K; Abernathy, D L; Stone, M B; Ran, S; Bud'ko, S L; Canfield, P C; Kreyssig, A; McQueeney, R J; Goldman, A I


    The relationship between antiferromagnetic spin fluctuations and superconductivity has become a central topic of research in studies of superconductivity in the iron pnictides. We present unambiguous evidence of the absence of magnetic fluctuations in the nonsuperconducting collapsed tetragonal phase of CaFe2As2 via inelastic neutron scattering time-of-flight data, which is consistent with the view that spin fluctuations are a necessary ingredient for unconventional superconductivity in the iron pnictides. We demonstrate that the collapsed tetragonal phase of CaFe2As2 is nonmagnetic, and discuss this result in light of recent reports of high-temperature superconductivity in the collapsed tetragonal phase of closely related compounds.

  2. Industrial research for transmutation scenarios (United States)

    Camarcat, Noel; Garzenne, Claude; Le Mer, Joël; Leroyer, Hadrien; Desroches, Estelle; Delbecq, Jean-Michel


    This article presents the results of research scenarios for americium transmutation in a 22nd century French nuclear fleet, using sodium fast breeder reactors. We benchmark the americium transmutation benefits and drawbacks with a reference case consisting of a hypothetical 60 GWe fleet of pure plutonium breeders. The fluxes in the various parts of the cycle (reactors, fabrication plants, reprocessing plants and underground disposals) are calculated using EDF's suite of codes, comparable in capabilities to those of other research facilities. We study underground thermal heat load reduction due to americium partitioning and repository area minimization. We endeavor to estimate the increased technical complexity of surface facilities to handle the americium fluxes in special fuel fabrication plants, americium fast burners, special reprocessing shops, handling equipments and transport casks between those facilities.

  3. Chemistry research and development progress report, May-October, 1978

    Energy Technology Data Exchange (ETDEWEB)

    Miner, F. J.


    Work in progress includes: calorimetry and thermodynamics of nuclear materials; americium recovery and purification; optimization of the cation exchange process for recovering americium and plutonium from molten salt extraction residues, photochemical separations of actinides; advanced ion exchange materials and techniques; secondary actinide recovery; removal of plutonium from lathe coolant oil; evaluation of tributyl phosphate-impregnated sorbent for plutonium-uranium separations; plutonium recovery in advance size reduction facility; plutonium peroxide precipitation; decontamination of Rocky Flats soil; soil decontamination at other Department of Energy sites; recovery of actinides from combustible wastes; induction-heated, tilt-pour furnace; vacuum melting; determination of plutonium and americium in salts and alloys by calorimetry; plutonium peroxide precipitation process; silica removal study; a comparative study of annular and Raschig ring-filled tanks; recovery of plutonium and americium from a salt cleanup alloy; and process development for recovery of americium from vacuum melt furnace crucibles.

  4. Investigation of the current break-down phenomena in solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, S.K.; Srinivasamurthy, N.; Agrawal, B.L. [Power Systems Group, ISRO Satellite Centre, Bangalore (India)


    Observed reverse current-voltage characteristics of the single crystal silicon and gallium arsenide solar cells have been analyzed. Physical mechanisms behind the junction break-down in silicon cells and current break-down in gallium arsenide cells have been identified. Preliminary estimates of the diffusion capacitance in GaAs cells have been presented

  5. The behaviour of Eu, Pu, Am radionuclide at burning radioactive graphite in an oxygen atmosphere. Computer experiments

    Directory of Open Access Journals (Sweden)

    Kolbin T.S.


    Full Text Available Be means of the method of computer thermodynamic simulation we studied the behaviour of the europium, plutonium and americium from the combustion of radioactive graphite in oxygen. Europe is in the form of condensed EuOCl, Eu2O3 and vapour EuO. Pluto is in the form of condensed vapour PuO2 and PuO2. Americium is a condensed AmO2, Am2O3 and vapour Am. The basic reactions occurring compounds with europium, plutonium and americium. Equilibrium constants of the reactions have been determined.

  6. Rubbia proposes a speedier voyage to Mars and back

    CERN Multimedia

    Abbott, A


    Carlo Rubbia has designed a propulsion engine that uses fission fragments of americium to directly heat a propulsion gas. He estimates it would allow a manned trip to Mars and back in around a year (8 paragraphs).

  7. Filgrastim (Neupogen) (United States)

    ... CRC) Simulation Tools Isotopes Americium-241 (Am-241) Cesium-137 (Cs-137) Radioisotope Brief Toxicology FAQs Cobalt- ... a drug that has been used successfully for cancer patients to stimulate the growth of the white ...

  8. Literatuuronderzoek plutoniumanalyses

    NARCIS (Netherlands)

    Glastra P; Kwakman PJM; LSO


    Dit rapport beschrijft de laatste ontwikkelingen in de radiochemische bepaling van plutonium in monstermatrices zoals luchtstoffilters, regenwater, gras en bodem. De radiochemische scheiding van plutonium van storende alfastralers, zoals americium en curium, is door de recente ontwikkeling van spec

  9. Study of the properties of the Am-O system in view of the transmutation of Am 241 in fast reactors; Etude des proprietes du systeme Am-O en vue de la transmutation de l`americium 241 en reacteur a neutrons rapides

    Energy Technology Data Exchange (ETDEWEB)

    Casalta, S.


    To reduce the long term toxicity of Am 241 it was considered to transmute this isotope in fast reactor. The first part of this thesis is an introduction at this problem. In the second part we give the experimental techniques used for the realisation of an AmO{sub 2}-MgO target (powder metallurgy under inert, oxidizing or reducing atmosphere). The properties of the Am-O system has been analyzed by X diffraction, thermodynamic and ceramography, in the Am{sub 2}O{sub 3}-AmO{sub 2} field. In the third part we study the external exposure risk created by the manufacturing of this target and in the last part the behavior of this target in a fast reactor. 66 refs., 28 figs., 25 tabs., 1 append.

  10. Methodology for the Inventory and Assessment of Americium Contamination Level in 1987 in an Area of Palomares Contaminated with Plutonium Weapon Grade; Estimacion del Contenido de Americio Existente en el Ano 1987 en una Zona de Palomares Contaminada en 1966 por Material de Plutonio Grado Bomba

    Energy Technology Data Exchange (ETDEWEB)

    Espinosa, A.; Aragon, A.; Cruz de la, B.


    This paper presents a methodology applied for the assessment of the ''241 Am coming from the decay of ''241 Pu isotope content in a contaminated area of Palomares, where the clean-up work done in 1966, given the negligible agricultural importance of such area at the time and its geographical characteristics, was not of the same magnitude as for the rest of the region. (Author) 4 refs.

  11. AM(VI) partitioning studies. FY14 final report

    Energy Technology Data Exchange (ETDEWEB)

    Mincher, Bruce J. [Idaho National Lab. (INL), Idaho Falls, ID (United States)


    The use of higher oxidation states of americium in partitioning from the lanthanides is under continued investigation by the sigma team. This is based on the hypothesis that Am(VI) can be produced and remain stable in irradiated first cycle raffinate solution long enough to perform solvent extraction for separations. The stability of Am(VI) to autoreduction was measured using millimolar americium concentrations in a 1-cm cell with a Cary 6000 UV/Vis spectrophotometer for data acquisition. At millimolar americium concentrations, Am(VI) is stable enough against its own autoreduction for separations purposes. A second major accomplishment during FY14 was the hot test. Americium oxidation and extraction was performed using a centrifugal contactor-based test bed consisting of an extraction stage and two stripping stages. Sixty-three percent americium extraction was obtained in one extraction stage, in agreement with batch contacts. Promising electrochemical oxidation results have also been obtained, using terpyridine ligand derivatized electrodes for binding of Am(III). Approximately 50 % of the Am(III) was oxidized to Am(V) over the course of 1 hour. It is believed that this is the first demonstration of the electrolytic oxidation of americium in a non-complexing solution. Finally, an initial investigation of Am(VI) extraction using diethylhexylbutyramide (DEHBA) was performed.

  12. NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference

    Energy Technology Data Exchange (ETDEWEB)

    Fitzgerald, M. [ed.


    Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

  13. High-power X- and Ka-band Gallium Nitride Amplifiers with Exceptional Efficiency Project (United States)

    National Aeronautics and Space Administration — Achieving very high-power amplification with maximum efficiency at X- and Ka-band is challenging using solid-state technology. Gallium Arsenide (GaAs) has been the...

  14. Activities of the Solid State Physics Research Institute (United States)


    Topics addressed include: muon spin rotation; annealing problems in gallium arsenides; Hall effect in semiconductors; computerized simulation of radiation damage; single-nucleon removal from Mg-24; and He-3 reaction at 200 and 400 MeV.


    A process was developed for the recovery of both arsenic and gallium from gallium arsenide polishing wastes. The economics associated with the current disposal techniques utilizing ferric hydroxide precipitation dictate that sequential recovery of toxic arsenic and valuble galliu...

  16. Inflammatory process decrease by gallium-aluminium-arsenide (GaAlAs) low intensity laser irradiation on postoperative extraction of impacted lower third molar; Reducao de processo inflamatorio com aplicacao de laser de arseneto de galio aluminio ({lambda}=830 nm) em pos-operatorio de exodontia de terceiros molares inferiores inclusos ou semi-inclusos

    Energy Technology Data Exchange (ETDEWEB)

    Atihe, Mauricio Martins


    This study aimed the observation of inflammatory process decrease by the use of GaAlAs Low Intensity Laser ({lambda}=830 nm; 40 mW) irradiation. Five patients were selected and submitted to surgery of impacted lower third molars, both right and left sides at different occasions. On a first stage, a tooth of a random chosen side - right or left - was extracted by conventional surgery, without LILT. The inflammatory process was measured at postoperative on the first, third and seventh days. This side was then called 'control side'. After 21 days, period in which the inflammatory process of the first surgery was terminated, the other side surgery took place, this time using LILT (4 J at four spots) at postoperative, first and third days. As the previous surgery, the inflammatory process was also measured at postoperative on the first, third and seventh days. This side was called 'experimental or lased side'. The inflammatory process was evaluated by measuring its four characteristic signs: swelling, pain, color and temperature. It was clearly observed a decrease for swelling, pain and color on the lased side which presented significant inference and descriptive statistics. It can be concluded that GaAlAs Low Intensity Laser ({lambda}=830 nm) can surely be used as an additional and important anti-inflammatory source on impacted lower third molar surgeries. (author)

  17. Temperature dependence of the lower critical field H{sub c1} in SmFeAsO{sub 0.9}F{sub 0.1} and Ba{sub 0.6}K{sub 0.4}Fe{sub 2}As{sub 2} iron-arsenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Ren, C., E-mail: [National Laboratory for Superconductivity, Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190 (China); Wang, Z.S.; Luo, H.Q.; Yang, H.; Shan, L. [National Laboratory for Superconductivity, Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190 (China); Wen, H.H., E-mail: [National Laboratory for Superconductivity, Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190 (China)


    We report detailed measurements of the temperature dependence of the lower critical field H{sub c1} of the FeAs-based superconductor SmFeAsO{sub 0.9}F{sub 0.1} (Sm-1111) and Ba{sub 0.6}K{sub 0.4}Fe{sub 2}As{sub 2} (BaK-122) by global and local magnetization measurements. It is found that the obtained H{sub c1} for both kinds of samples show a weak temperature dependence in low temperature region. We argue that this weak T-dependence of H{sub c1} of Sm-1111 does not indicate a conventional s-wave state, instead it satisfies a T{sup 2} dependence up to a temperature of (0.5-0.6) T{sub c}. In contrast, the data of H{sub c1}(T) of BaK-122 superconductor clearly show a multigap behavior. Excellent fitting to the data can be reached with two s-wave superconducting gaps. Comparison of the absolute values of H{sub c1}(0) between Sm-1111 and BaK-122 shows a relatively large superfluid density for the latter. This may indicate the distinction between the electron doped and hole-doped FeAs-based superconductors.

  18. On the transmutation of Am in a fast lead-cooled system

    Indian Academy of Sciences (India)

    B P Kochurov; V N Konev; A Yu Kwaretzkheli


    Characteristics of the equilibrium fuel cycle for the core or a blanket of ADS having the structure of the core of a fast lead-cooled reactor of type BREST (Russian abbreviation for `Bystryy Reaktor so Svintsovym Teplonositelem') in a mode of americium transmutation are calculated. Americium loading was taken 5% of heavy atoms. Keeping the average multiplication factor the same as in a standard equilibrium cycle, reactivity swing over 1 year's microcycle is about 1%, that demands partial fuel reloading with a periodicity of about one month. For one year of operation, 61 kg of americium is destroyed, and due to increased 238Pu content, americium is mainly converted to fission products. Thus in a system of 1 GWt (thermal), 87 kg of americium can be transmuted yearly. The estimate of the reactivity void effect has shown that it increases to 0.6% almost linearly with the void fraction increasing up to 25% and reaches its maximum of 0.7% at a void fraction of about 50%. Application of similar strategy for ADS with a sub-criticality level ≈ 0.96–0.98 can essentially relax safety problems related to positive void effects.

  19. Porous metal oxide microspheres from ion exchange resin (United States)

    Picart, S.; Parant, P.; Caisso, M.; Remy, E.; Mokhtari, H.; Jobelin, I.; Bayle, J. P.; Martin, C. L.; Blanchart, P.; Ayral, A.; Delahaye, T.


    This study is devoted to the synthesis and the characterization of porous metal oxide microsphere from metal loaded ion exchange resin. Their application concerns the fabrication of uranium-americium oxide pellets using the powder-free process called Calcined Resin Microsphere Pelletization (CRMP). Those mixed oxide ceramics are one of the materials envisaged for americium transmutation in sodium fast neutron reactors. The advantage of such microsphere precursor compared to classical oxide powder is the diminution of the risk of fine dissemination which can be critical for the handling of highly radioactive powders such as americium based oxides and the improvement of flowability for the filling of compaction chamber. Those millimetric oxide microspheres incorporating uranium and americium were synthesized and characterizations showed a very porous microstructure very brittle in nature which occurred to be adapted to shaping by compaction. Studies allowed to determine an optimal heat treatment with calcination temperature comprised between 700-800 °C and temperature rate lower than 2 °C/min. Oxide Precursors were die-pressed into pellets and then sintered under air to form regular ceramic pellets of 95% of theoretical density (TD) and of homogeneous microstructure. This study validated thus the scientific feasibility of the CRMP process to prepare bearing americium target in a powder free manner.

  20. Facilities for preparing actinide or fission product-based targets

    CERN Document Server

    Sors, M


    Research and development work is currently in progress in France on the feasibility of transmutation of very long-lived radionuclides such as americium, blended with an inert medium such as magnesium oxide and pelletized for irradiation in a fast neutron reactor. The process is primarily designed to produce ceramics for nuclear reactors, but could also be used to produce targets for accelerators. The Actinide Development Laboratory is part of the ATALANTE complex at Marcoule, where the CEA investigates reprocessing, liquid and solid waste treatment and vitrification processes. The laboratory produces radioactive sources; after use, their constituents are recycled, notably through R and D programs requiring such materials. Recovered americium is purified, characterized and transformed for an experiment known as ECRIX, designed to demonstrate the feasibility of fabricating americium-based ceramics and to determine the reactor transmutation coefficients.

  1. Recovery of trans-plutonium elements; Recuperation des elements transplutoniens

    Energy Technology Data Exchange (ETDEWEB)

    Espie, J.Y.; Poncet, B.; Simon, A. [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires


    The object of this work is to study the recovery of americium and curium from the fission-product solution obtained from the processing of irradiated fuel elements made of natural metallic uranium alloyed with aluminium, iron and silicon; these elements have been subjected to an average irradiation of 4000 MW days/ton in a gas-graphite type reactor having a thermal power of 3.7 MW/ton of uranium. The process used consists of 3 extraction cycles and one americium-curium separation: - 1) extraction cycle in 40 per cent TBP: extraction of actinides and lanthanides; elimination of fission products; - 2) extraction cycle in 8 per cent D2EHPA: decontamination from the fission products, decontamination of actinides from lanthanides; - 3) extraction cycle in 40 per cent TBP: separation of the complexing agent and concentration of the actinides; - 4) americium-curium separation by precipitation. (authors) [French] Cette etude a pour objet, la recuperation de l'americium et du curium de la solution de produits de fission provenant du traitement de combustibles irradies a base d'uranium naturel metallique allie a l'aluminium, le fer, et le silicium, et ayant subi une irradiation moyenne de 4000 MWj/t dans une pile du type graphite-gaz, dont la puissance thermique est de 3.7 MW/t d'uranium. Le procede utilise comprend 3 cycles d'extraction et une separation americium-curium: - 1. cycle d'extraction dans le TBP a 40 pour cent: extraction des actinides et des lanthanides, elimination des produits de fission; - 2. cycle d'extraction dans le D2EHPA a 8 pour cent: decontamination en produits de fission, decontamination des actinides en lanthanides; - 3. cycle d'extraction dans le TBP a 40 pour cent: separation du complexant et concentration des actinides; - 4. separation americium-curium par precipitation. (auteurs)

  2. Colloid formation during waste form reaction: implications for nuclear waste disposal (United States)

    Bates, J. K.; Bradley, J.; Teetsov, A.; Bradley, C. R.; ten Brink, Marilyn Buchholtz


    Insoluble plutonium- and americium-bearing colloidal particles formed during simulated weathering of a high-level nuclear waste glass. Nearly 100 percent of the total plutonium and americium in test ground water was concentrated in these submicrometer particles. These results indicate that models of actinide mobility and repository integrity, which assume complete solubility of actinides in ground water, underestimate the potential for radionuclide release into the environment. A colloid-trapping mechanism may be necessary for a waste repository to meet long-term performance specifications.

  3. The friction behavior of semiconductors Si and GaAs in contact with pure metals (United States)

    Mishina, H.


    The friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals was studied. Five transition and two nontransition metals, titanium, tantalum, nickel, palladium, platinum, copper, and silver, slid on a single crystal silicon (111) surface. Four metals, indium, nickel, copper and silver, slid on a single crystal gallium arsenide (100) surface. Experiments were conducted in room air and in a vacuum of 10 to the minus 7th power N/sq cm (10 to the minus 9th power torr). The results indicate that the sliding of silicon on the transition metals exhibits relatively higher friction than for the nontransition metals in contact with silicon. There is a clear correlation between friction and Schottky barrier height formed at the metal silicon interface for the transition metals. Transition metals with a higher barrier height on silicon had a lower friction. The same effect of barrier height was found for the friction of gallium arsenide in contact with metals.

  4. Ge/GaAs heterostructure matrix detector

    Energy Technology Data Exchange (ETDEWEB)

    Kostamo, P. [Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, 02015 HUT (Finland)]. E-mail:; Saeynaetjoki, A. [Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, 02015 HUT (Finland); Knuuttila, L. [Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, 02015 HUT (Finland); Lipsanen, H. [Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3500, 02015 HUT (Finland); Andersson, H. [Oxford Instruments Analytical Oy (United Kingdom); Banzuzi, K. [Oxford Instruments Analytical Oy (United Kingdom); Nenonen, S. [Oxford Instruments Analytical Oy (United Kingdom); Sipilae, H. [Oxford Instruments Analytical Oy (United Kingdom); Vaijaervi, S. [Oxford Instruments Analytical Oy (United Kingdom); Lumb, D. [Science Payload and Advanced Concepts Office, ESA/ESTEC, Nordwijk (Netherlands)


    In this paper we present a novel germanium/gallium arsenide heterostructure X-ray detector with the active volume of germanium. The heterostructure is fabricated by depositing a gallium arsenide layer on a high-purity germanium wafer in a vertical metalorganic vapor-phase epitaxy system. This approach provides a new alternative to traditional lithium diffused n+ contact which is not easily applicable for finely pixelated detectors. The detector chip fabrication utilizing this kind of heterostructure is straightforward and only standard lithographic processes need to be applied. Electrical properties of the small format detector matrices are studied. Very low reverse biased current at 77 K is observed. It is concluded that the diffusion of arsenic in germanium results in an n-type germanium layer under the epitaxial gallium arsenide.

  5. Observation of the Spin Hall Effect in Semiconductors (United States)

    Kato, Y. K.; Myers, R. C.; Gossard, A. C.; Awschalom, D. D.


    Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field. A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect.

  6. Space station automation study: Automation requriements derived from space manufacturing concepts,volume 2 (United States)


    Automation reuirements were developed for two manufacturing concepts: (1) Gallium Arsenide Electroepitaxial Crystal Production and Wafer Manufacturing Facility, and (2) Gallium Arsenide VLSI Microelectronics Chip Processing Facility. A functional overview of the ultimate design concept incoporating the two manufacturing facilities on the space station are provided. The concepts were selected to facilitate an in-depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, sensors, and artificial intelligence. While the cost-effectiveness of these facilities was not analyzed, both appear entirely feasible for the year 2000 timeframe.

  7. A Study of Ga(.47)In(.53)As and Al(.48)In(.52)As for Very High Frequency Device Applications. (United States)


    GaInAs/AlInAs modulation doped structures grown by molecular beam epitaxy (MBE) were studied. The parameters of the MBE growth were adjusted to give high room temperature mobilities (-12000 sq cm/v-sec) and high sheet electron concentrations 2 x 10 to the 12th power per sq cm. Because of higher electron velocities and high conductivities GaInAs modulation doped transistors should be significantly higher speed than those of GaAs. Originator-Supplied keywords include: Gallium indium arsenide, Aluminum indium arsenide, Indium phosphide, Modulation

  8. Semiconducting III-V compounds

    CERN Document Server

    Hilsum, C; Henisch, Heinz R


    Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

  9. Radiological analysis of materials sampled on the old nuclear test site of In Ekker (Algeria); Analyses radiologiques de materiaux preleves sur l'ancien site d'essais nucleaires d'In Ekker (Algerie)

    Energy Technology Data Exchange (ETDEWEB)

    Chareyron, Bruno


    After having recalled the context of the French nuclear test campaign in Algeria between 1961 and 1966, this document reports and comments radiological measurements performed on the site of In Ekker, and also results of analysis performed in laboratory (contamination by cesium 137, americium 241, plutonium); recommendations are given

  10. Historical Review of Californium-252 Discovery and Development (United States)

    Stoddard, D. H.


    This paper discusses the discovery and history of californium 252. This isotope may be synthesized by irradiating plutonium 239, plutonium 242, americium 243, or curium 244 with neutrons in a nuclear reactor. Various experiments and inventions involving Cf conducted at the Savannah River Plant are discussed. The evolution of radiotherapy using californium 252 is reviewed. (PLG)

  11. Determination of Am-241 in lung and bone by gamma spectrometry with semiconductor detectors LEGe; Determinacion de Am- 241 en pulmon y hueso por espectrometria gamma con detectores de semiconductor LEGe

    Energy Technology Data Exchange (ETDEWEB)

    Perez Lopez, B.


    Americium is produced from neutron absorption plutonium atoms within nuclear reactors. The work of dismantling and decontamination of the installations and radioactive waste management makes workers exposed acquire risk of internal exposure and therefore can incorporate Am-241 in his body. (Author)

  12. Experimental findings on actinide recovery utilizing oxidation by peroxydisulfate followed by ion exchange: Fuel cycle research & development

    Energy Technology Data Exchange (ETDEWEB)

    Hobbs, D. T. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Shehee, T. C. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)


    Our research seeks to determine if inorganic ion-exchange materials can be exploited to provide effective minor actinide (Am, Cm) separation from lanthanides. Previous work has established that a number of inorganic and UMOF ion-exchange materials exhibit varying affinities for actinides and lanthanides, which may be exploited for effective separations. During FY15, experimental work focused on investigating methods to oxidize americium in dilute nitric and perchloric acid with subsequent ion-exchange performance measurements of ion exchangers with the oxidized americium in dilute nitric acid. Ion-exchange materials tested included a variety of alkali titanates. Americium oxidation testing sought to determine the influence that other redox active components may have on the oxidation of AmIII. Experimental findings indicated that CeIII, NpV, and RuII are oxidized by peroxydisulfate, but there are no indications that the presence of CeIII, NpV, and RuII affected the rate or extent of americium oxidation at the concentrations of peroxydisulfate being used.

  13. 10 CFR Appendix E to Part 20 - Nationally Tracked Source Thresholds (United States)


    ... Category 1(TBq) Category 1(Ci) Category 2(TBq) Category 2(Ci) Actinium-227 20 540 0.2 5.4 Americium-241 60... 2 54 Strontium-90 1,000 27,000 10 270 Thorium-228 20 540 0.2 5.4 Thorium-229 20 540 0.2 5.4...

  14. Literatuuronderzoek plutoniumanalyses

    NARCIS (Netherlands)

    Glastra P; Kwakman PJM; LSO


    This report describes recent developments in the radiochemical determination of plutonium in samples from the environment such as aerosols, rainwater, grass and soil. The radiochemical separation of plutonium from interfering alpha emitters, such as americium and curium, was found to be simplified b

  15. Discovery of Isotopes of the Transuranium Elements with 93 <= Z <= 98

    CERN Document Server

    Fry, C


    One hundred and five isotopes of the transuranium elements neptunium, plutonium, americium, curium, berkelium and californium have so far been observed; the discovery of these isotopes is discussed. For each isotope a brief summary of the first refereed publication, including the production and identification method, is presented.

  16. Presence and Character of the 5f Electrons in the Actinide Metals

    DEFF Research Database (Denmark)

    Johansson, B.; Skriver, Hans Lomholt; Mårtensson, N.;


    The sensitivity of the Image level binding energy to the occupation of the 5f orbital is pointed out and used to demonstrate the presence of 5f electrons in the uranium metal. It is suggested that the valence band spectrum of uranium might contain satellites originating from excitations to locali...... and the critical separation is found to take place between plutonium and americium....

  17. Experimental findings on actinide recovery utilizing oxidation by peroxydisulfate followed by ion exchange: Fuel cycle research & development

    Energy Technology Data Exchange (ETDEWEB)

    Hobbs, D. T. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Shehee, T. C. [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL)


    Our research seeks to determine if inorganic ion-exchange materials can be exploited to provide effective minor actinide (Am, Cm) separation from lanthanides. Previous work has established that a number of inorganic and UMOF ion-exchange materials exhibit varying affinities for actinides and lanthanides, which may be exploited for effective separations. During FY15, experimental work focused on investigating methods to oxidize americium in dilute nitric and perchloric acid with subsequent ion-exchange performance measurements of ion exchangers with the oxidized americium in dilute nitric acid. Ion-exchange materials tested included a variety of alkali titanates. Americium oxidation testing sought to determine the influence that other redox active components may have on the oxidation of AmIII. Experimental findings indicated that CeIII, NpV, and RuII are oxidized by peroxydisulfate, but there are no indications that the presence of CeIII, NpV, and RuII affected the rate or extent of americium oxidation at the concentrations of peroxydisulfate being used.

  18. The prospect of uranium nitride (UN) and mixed nitride fuel (UN-PuN) for pressurized water reactor (United States)

    Syarifah, Ratna Dewi; Suud, Zaki


    Design study of small Pressurized Water Reactors (PWRs) core loaded with uranium nitride fuel (UN) and mixed nitride fuel (UN-PuN), Pa-231 as burnable poison, and Americium has been performed. Pa-231 known as actinide material, have large capture cross section and can be converted into fissile material that can be utilized to reduce excess reactivity. Americium is one of minor actinides with long half life. The objective of adding americium is to decrease nuclear spent fuel in the world. The neutronic analysis results show that mixed nitride fuel have k-inf greater than uranium nitride fuel. It is caused by the addition of Pu-239 in mixed nitride fuel. In fuel fraction analysis, for uranium nitride fuel, the optimum volume fractions are 45% fuel fraction, 10% cladding and 45% moderator. In case of UN-PuN fuel, the optimum volume fractions are 30% fuel fraction, 10% cladding and 60% coolant/ moderator. The addition of Pa-231 as burnable poison for UN fuel, enrichment U-235 5%, with Pa-231 1.6% has k-inf more than one and excess reactivity of 14.45%. And for mixed nitride fuel, the lowest value of reactivity swing is when enrichment (U-235+Pu) 8% with Pa-231 0.4%, the excess reactivity value 13,76%. The fuel pin analyze for the addition of Americium, the excess reactivity value is lower than before, because Americium absorb the neutron. For UN fuel, enrichment U-235 8%, Pa-231 1.6% and Am 0.5%, the excess reactivity is 4.86%. And for mixed nitride fuel, when enrichment (U-235+Pu) 13%, Pa-231 0.4% and Am 0.1%, the excess reactivity is 11.94%. For core configuration, it is better to use heterogeneous than homogeneous core configuration, because the radial power distribution is better.

  19. Fast Clock Recovery for Digital Communications (United States)

    Tell, R. G.


    Circuit extracts clock signal from random non-return-to-zero data stream, locking onto clock within one bit period at 1-gigabitper-second data rate. Circuit used for synchronization in opticalfiber communications. Derives speed from very short response time of gallium arsenide metal/semiconductor field-effect transistors (MESFET's).

  20. Suitability of integrated protection diodes from diverse semiconductor technologies

    NARCIS (Netherlands)

    Wanum, van Maurice; Lebouille, Tom; Visser, Guido; Vliet, van Frank E.


    Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are c

  1. Suitability of integrated protection diodes from diverse semiconductor technologies

    NARCIS (Netherlands)

    Wanum, M. van; Lebouille, T.T.N.; Visser, G.C.; Vliet, F.E. van


    In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are Silicon, Gallium Arsenide and Gallium Nitride. The diodes in the diverse semiconductor technologies themselves are close in p

  2. Heat load of a GaAs photocathode in an SRF electron gun

    Institute of Scientific and Technical Information of China (English)

    王尔东; 赵夔; JSrg Kewisch; Ilan Ben-Zvi; Andrew Burrill; Trivini Rao; 吴琼; Animesh Jain; Ramesh Gupta; Doug Holmes


    A great deal of effort has been made over the last decades to develop a better polarized electron source for high energy physics. Several laboratories operate DC guns with a gallium arsenide photocathode, which yield a highly polarized electron beam. Howe

  3. Efficient frequency comb generation in AlGaAs-on-insulator

    DEFF Research Database (Denmark)

    Pu, Minhao; Ottaviano, Luisa; Semenova, Elizaveta;


    The combination of nonlinear and integrated photonics enables Kerr frequency comb generation in stable chip-based microresonators. Such a comb system will revolutionize applications, including multi-wavelength lasers, metrology, and spectroscopy. Aluminum gallium arsenide (AlGaAs) exhibits very h...

  4. Simple intrinsic defects in InAs :

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter Andrew


    This Report presents numerical tables summarizing properties of intrinsic defects in indium arsenide, InAs, as computed by density functional theory using semi-local density functionals, intended for use as reference tables for a defect physics package in device models.

  5. IMPATT diodes. Citations from the NTIS data base (United States)

    Reed, W. E.


    Government sponsored research reports are cited covering the design, characterization, and applications of IMPATT diodes. Topics include reliability, power handling, properties, noise, fabrication, and radiation effects. The use of silicon and gallium arsenide IMPATT diodes for microwave generation and amplification is included. This updated bibliography contains 182 abstracts, 14 of which are new entries to the previous edition.

  6. Growth of electronic materials in microgravity (United States)

    Matthiesen, D. H.


    A growth experiment aimed at growing two selenium-doped gallium arsenide crystals, each of which are one inch in diameter and 3.45 inches in length, is described. Emphasis is placed on the effect of microgravity on the segregation behavior of electronic materials. The lessons learned from the 1975 ASTP mission have been incorporated in this experiment.

  7. Growth and Characterization of In(1-x)Ga(x)As(y)P(1-y) and GaAs Using Molecular Beam Epitaxy. (United States)


    110. W. Walukiewicz, L. Lagowski, L. Jastrzebski, M. Lichtengteiger, and H.C. Gatos , "Electron Mobility and Free-Carrier Absorption in GaAs...Arsenide," Soy . Phys. Semicomd., 8, pp. 311-316 (1974). 118. D.W. Covington, E.L. Meeks, and W.H. Hicklin (unpublished report, 31 July 1979). 115 119

  8. Unconventional superconductivity in Ba(0.6)K(0.4)Fe2As2 from inelastic neutron scattering. (United States)

    Christianson, A D; Goremychkin, E A; Osborn, R; Rosenkranz, S; Lumsden, M D; Malliakas, C D; Todorov, I S; Claus, H; Chung, D Y; Kanatzidis, M G; Bewley, R I; Guidi, T


    A new family of superconductors containing layers of iron arsenide has attracted considerable interest because of their high transition temperatures (T(c)), some of which are >50 K, and because of similarities with the high-T(c) copper oxide superconductors. In both the iron arsenides and the copper oxides, superconductivity arises when an antiferromagnetically ordered phase has been suppressed by chemical doping. A universal feature of the copper oxide superconductors is the existence of a resonant magnetic excitation, localized in both energy and wavevector, within the superconducting phase. This resonance, which has also been observed in several heavy-fermion superconductors, is predicted to occur when the sign of the superconducting energy gap takes opposite values on different parts of the Fermi surface, an unusual gap symmetry which implies that the electron pairing interaction is repulsive at short range. Angle-resolved photoelectron spectroscopy shows no evidence of gap anisotropy in the iron arsenides, but such measurements are insensitive to the phase of the gap on separate parts of the Fermi surface. Here we report inelastic neutron scattering observations of a magnetic resonance below T(c) in Ba(0.6)K(0.4)Fe(2)As(2), a phase-sensitive measurement demonstrating that the superconducting energy gap has unconventional symmetry in the iron arsenide superconductors.

  9. Luminescence of Lanthanides and Actinides Implanted into Binary III-V semiconductors and AlGaAs (United States)


    16th International Symposium on Gallium Arsenide and Related Compounds, 25-29 Sep1 1989, 1ruiz~a, agano, Japan. Refereed paper to appear in ~Uyr...valve on the cryostat and using a Lakeshore Cryogenics Model DRC - 80C digital temperature contoller with a calibrated GaAs diode and three 3 W heaters

  10. JPRS Report Africa (Sub-Sahara) (United States)


    DISTRIBUTION STATEMENT A Approved for public releases Dfanäbatloa Unlimited REPRODUCED BY U.S. DEPARTMENT OF COMMERCE NATIONAL TECHNICAL...Carina La Grange; THE STAR, 3 Nov 8/j ^ S&T Gallium Arsenide Quantum Well Described [ ELECTRONIQUE ACTUALITTES, 18 Sep 87] 34 ZAMBIA Farmers

  11. Response of superconductivity and crystal structure of LiFeAs to hydrostatic pressure. (United States)

    Mito, Masaki; Pitcher, Michael J; Crichton, Wilson; Garbarino, Gaston; Baker, Peter J; Blundell, Stephen J; Adamson, Paul; Parker, Dinah R; Clarke, Simon J


    On the application of hydrostatic pressures of up to 1.3 GPa, the superconducting transition temperatures (T(c)) of samples of LiFeAs are lowered approximately monotonically at approximately -2 K GPa(-1). Measurements of the X-ray powder diffraction pattern at hydrostatic pressures of up to 17 GPa applied by a He gas pressure medium in a diamond anvil cell reveal a bulk modulus for LiFeAs of 57.3(6) GPa which is much smaller than that of other layered arsenide and oxyarsenide superconductors. LiFeAs also exhibits much more isotropic compression than other layered iron arsenide superconductors. The higher and more isotropic compressibility is presumably a consequence of the small size of the lithium ion. At ambient pressure the FeAs(4) tetrahedra are the most compressed in the basal plane of those in any of the superconducting iron arsenides. On increasing the pressure the Fe-Fe distance contracts more rapidly than the Fe-As distance so that the FeAs(4) tetrahedra become even more distorted from the ideal tetrahedral shape. The decrease in T(c) with applied pressure is therefore consistent with the observations that in the iron arsenides and related materials investigated thus far, T(c) is maximized for a particular electron count when the FeAs(4) tetrahedra are close to regular.

  12. SSI/MSI/LSI/VLSI/ULSI. (United States)

    Alexander, George


    Discusses small-scale integrated (SSI), medium-scale integrated (MSI), large-scale integrated (LSI), very large-scale integrated (VLSI), and ultra large-scale integrated (ULSI) chips. The development and properties of these chips, uses of gallium arsenide, Josephson devices (two superconducting strips sandwiching a thin insulator), and future…

  13. Intact mammalian cell function on semi-conductor nanowire arrays: new perspectives for cell-based biosensing

    DEFF Research Database (Denmark)

    Berthing, Trine; Bonde, Sara; Sørensen, Claus Birger;


    Nanowires (NWs) are attracting more and more interest due to their potential cellular applications, such as delivery of compounds or sensing platforms. Arrays of vertical indium-arsenide (InAs) NWs are interfaced with human embryonic kidney cells and rat embryonic dorsal root ganglion neurons. A ...

  14. Modulation of fluorescence signals from biomolecules along nanowires due to interaction of light with oriented nanostructures

    DEFF Research Database (Denmark)

    Frederiksen, Rune Schøneberg; Alarcon-Llado, Esther; Madsen, Morten H.


    High aspect ratio nanostructures have gained increasing interest as highly sensitive platforms for biosensing. Here, well-defined biofunctionalized vertical indium arsenide nanowires are used to map the interaction of light with nanowires depending on their orientation and the excitation waveleng...

  15. Low temperature transport in p-doped InAs nanowires

    DEFF Research Database (Denmark)

    Upadhyay, Shivendra; Jespersen, Thomas Sand; Madsen, Morten Hannibal;


    We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature...

  16. Attosecond Electron Processes in Materials: Excitons, Plasmons, and Charge Dynamics (United States)


    carrier dynamics in gallium arsenide thin films, and real time investigations of plasmon dynamics in SiO2 covered gold nanospheres. Moreover, the...Measurement of Interlayer Screening Length of Layered Graphene by Plasmonic Nanostructure Resonances,” J. Phys. Chem. C 117, 22211 (2013). 21. P. M

  17. High-temperature optically activated GaAs power switching for aircraft digital electronic control (United States)

    Berak, J. M.; Grantham, D. H.; Swindal, J. L.; Black, J. F.; Allen, L. B.


    Gallium arsenide high-temperature devices were fabricated and assembled into an optically activated pulse-width-modulated power control for a torque motor typical of the kinds used in jet engine actuators. A bipolar heterojunction phototransistor with gallium aluminum arsenide emitter/window, a gallium arsenide junction field-effect power transistor and a gallium arsenide transient protection diode were designed and fabricated. A high-temperature fiber optic/phototransistor coupling scheme was implemented. The devices assembled into the demonstrator were successfully tested at 250 C, proving the feasibility of actuator-located switching of control power using optical signals transmitted by fibers. Assessments of the efficiency and technical merits were made for extension of this high-temperature technology to local conversion of optical power to electrical power and its control at levels useful for driving actuators. Optical power sources included in the comparisons were an infrared light-emitting diode, an injection laser diode, tungsten-halogen lamps and arc lamps. Optical-to-electrical power conversion was limited to photovoltaics located at the actuator. Impedance matching of the photovoltaic array to the load was considered over the full temperature range, -55 C to 260 C. Loss of photovoltaic efficiency at higher temperatures was taken into account. Serious losses in efficiency are: (1) in the optical source and the cooling which they may require in the assumed 125 C ambient, (2) in the decreased conversion efficiency of the gallium arsenide photovoltaic at 260 C, and (3) in impedance matching. Practical systems require improvements in these areas.

  18. Experimental Findings On Minor Actinide And Lanthanide Separations Using Ion Exchange

    Energy Technology Data Exchange (ETDEWEB)

    Hobbs, D. T.; Shehee, T. C.; Clearfield, A.


    This project seeks to determine if inorganic or hybrid inorganic ion-exchange materials can be exploited to provide effective americium and curium separations. Specifically, we seek to understand the fundamental structural and chemical factors responsible for the selectivity of the tested ion-exchange materials for actinide and lanthanide ions. During FY13, experimental work focused in the following areas: (1) investigating methods to oxidize americium in dilute nitric acid with subsequent ion-exchange performance measurements of ion exchangers with the oxidized americium and (2) synthesis, characterization and testing of ion-exchange materials. Ion-exchange materials tested included alkali titanates, alkali titanosilicates, carbon nanotubes and group(IV) metal phosphonates. Americium oxidation testing sought to determine the influence that other redox active components may have on the oxidation of Am(III). Experimental findings indicated that Pu(IV) is oxidized to Pu(VI) by peroxydisulfate, but there are no indications that the presence of plutonium affects the rate or extent of americium oxidation at the concentrations of peroxydisulfate being used. Tests also explored the influence of nitrite on the oxidation of Am(III). Given the formation of Am(V) and Am(VI) in the presence of nitrite, it appears that nitrite is not a strong deterrent to the oxidation of Am(III), but may be limiting Am(VI) by quickly reducing Am(VI) to Am(V). Interestingly, additional absorbance peaks were observed in the UV-Vis spectra at 524 and 544 nm in both nitric acid and perchloric acid solutions when the peroxydisulfate was added as a solution. These peaks have not been previously observed and do not correspond to the expected peak locations for oxidized americium in solution. Additional studies are in progress to identify these unknown peaks. Three titanosilicate ion exchangers were synthesized using a microwave-accelerated reaction system (MARS) and determined to have high affinities

  19. TRUEX Radiolysis Testing Using the INL Radiolysis Test Loop: FY-2012 Status Report

    Energy Technology Data Exchange (ETDEWEB)

    Dean R. Peterman; Lonnie G. Olson; Richard D. Tillotson; Rocklan G. McDowell; Jack D. Law


    The INL radiolysis test loop has been used to evaluate the affect of radiolytic degradation upon the efficacy of the strip section of the TRUEX flowsheet for the recovery of trivalent actinides and lanthanides from acidic solution. The nominal composition of the TRUEX solvent used in this study is 0.2 M CMPO and 1.4 M TBP dissolved in n-dodecane and the nominal composition of the TRUEX strip solution is 1.5 M lactic acid and 0.050 M diethylenetriaminepentaacetic acid. Gamma irradiation of a mixture of TRUEX process solvent and stripping solution in the test loop does not adversely impact flowsheet performance as measured by stripping americium ratios. The observed increase in americium stripping distribution ratios with increasing absorbed dose indicates the radiolytic production of organic soluble degradation compounds.

  20. 2014 AFCI Glovebox Event Executive Summary

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, Joseph Lenard [Idaho National Lab. (INL), Idaho Falls, ID (United States)


    One of the primary INL missions is to support development of advanced fuels with the goal of creating reactor fuels that produce less waste and are easier to store. The Advanced Fuel Cycle Initiative (AFCI) Glovebox in the Fuel Manufacturing Facility (FMF) is used for several fuel fabrication steps that involve transuranic elements, including americium. The AFCI glove box contains equipment used for fuel fabrication, including an arc melter – a small, laboratory-scale version of an electric arc furnace used to make new metal alloys for research – and an americium distillation apparatus. This overview summarizes key findings related to the investigation into the releases of airborne radioactivity that occurred in the AFCI glovebox room in late August and early September 2014. The full report (AFCI Glovebox Radiological Release – Evaluation, Corrective Actions and Testing, INL/INL-15-36996) provides details of the identified issues, corrective actions taken as well as lessons learned

  1. Technical Improvements to an Absorbing Supergel for Radiological Decontamination in Tropical Environments

    Energy Technology Data Exchange (ETDEWEB)

    Kaminski, Michael D. [Argonne National Lab. (ANL), Argonne, IL (United States); Mertz, Carol J. [Argonne National Lab. (ANL), Argonne, IL (United States); Kivenas, Nadia [Argonne National Lab. (ANL), Argonne, IL (United States); demmer, Rick [Idaho National Lab. (INL), Idaho Falls, ID (United States)


    Argonne National Laboratory (Argonne) developed a superabsorbing gel-based process (SuperGel) for the decontamination of cesium from concrete and other porous building materials. Here, we report on results that tested the gel decontamination technology on specific concrete and ceramic formulations from a coastal city in Southeast Asia, which may differ significantly from some U.S. sources. Results are given for the evaluation of americium and cesium sequestering agents that are commercially available at a reasonable cost; the evaluation of a new SuperGel formulation that combines the decontamination properties of cesium and americium; the variation of the contamination concentration to determine the effects on the decontamination factors with concrete, tile, and brick samples; and pilot-scale testing (0.02–0.09 m2 or 6–12 in. square coupons).

  2. Fabrication and Pre-irradiation Characterization of a Minor Actinide and Rare Earth Containing Fast Reactor Fuel Experiment for Irradiation in the Advanced Test Reactor

    Energy Technology Data Exchange (ETDEWEB)

    Timothy A. Hyde


    The United States Department of Energy, seeks to develop and demonstrate the technologies needed to transmute the long-lived transuranic actinide isotopes contained in spent nuclear fuel into shorter lived fission products, thereby decreasing the volume of material requiring disposal and reducing the long-term radiotoxicity and heat load of high-level waste sent to a geologic repository. This transmutation of the long lived actinides plutonium, neptunium, americium and curium can be accomplished by first separating them from spent Light Water Reactor fuel using a pyro-metalurgical process, then reprocessing them into new fuel with fresh uranium additions, and then transmuted to short lived nuclides in a liquid metal cooled fast reactor. An important component of the technology is developing actinide-bearing fuel forms containing plutonium, neptunium, americium and curium isotopes that meet the stringent requirements of reactor fuels and materials.

  3. Determination of the first ionization potential of actinides by resonance ionization mass spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Koehler, S. [Institut fuer Kernchemie Universitaet Mainz, Mainz (Germany); Albus, F. [Institu fuer Physik, Universitaet Mainz, Mainz (Germany); Dibenberger, R.; Erdmann, N.; Funk, H. [Institut fuer Kernchemiess Universitaet Mainz, Mainz (Germany); Hasse, H. [Institut fuer Physik, Universitaet Mainz, Mainz (Germany); Herrmann, G. [Institut fuer Kernchemiess Universitaet Mainz, Mainz (Germany); Huber, G.; Kluge, H.; Nunnemann, M.; Passler, G. [Institut fuer Physik, Universitaet Mainz, Mainz (Germany); Rao, P.M. [Bhabha Atomic Research Centre Bombay (India); Riegel, J.; Trautmann, N. [Institut fuer Kernchemie Universitaet Mainz, Mainz (Germany); Urban, F. [Institut fuer Physik, Universitaet Mainz, Mainz (Germany)


    Resonance ionization mass spectroscopy (RIMS) is used for the precise determination of the first ionization potential of transuranium elements. The first ionization potentials (IP) of americium and curium have been measured for the first time to IP{sub {ital Am}}=5.9738(2) and IP{sub {ital Cm}}=5.9913(8) eV, respectively, using only 10{sup 12} atoms of {sup 243}Am and {sup 248}Cm. The same technique was applied to thorium, neptunium, and plutonium yielding IP{sub T{sub H}}=6.3067(2), IP{sub N{sub P}}=6.2655(2), and IP{sub {ital Pu}}=6.0257(8) eV. The good agreement of our results with the literature data proves the precision of the method which was additionally confirmed by the analysis of Rydberg seris of americium measured by RIMS. {copyright}American Institute of Physics 1995

  4. Incineration by accelerator; Incineration par accelerateur

    Energy Technology Data Exchange (ETDEWEB)

    Cribier, M.; FIoni, G.; Legrain, R.; Lelievre, F.; Leray, S.; Pluquet, A.; Safa, H.; Spiro, M.; Terrien, Y.; Veyssiere, Ch.


    The use MOX fuel allows to hope a stabilization of plutonium production around 500 tons for the French park. In return, the flow of minor actinides is increased to several tons. INCA (INCineration by Accelerator), dedicated instrument, would allow to transmute several tons of americium, curium and neptunium. It could be able to reduce nuclear waste in the case of stopping nuclear energy use. This project needs: a protons accelerator of 1 GeV at high intensity ( 50 m A), a window separating the accelerator vacuum from the reactor, a spallation target able to produce 30 neutrons by incident proton, an incineration volume where a part of fast neutrons around the target are recovered, and a thermal part in periphery with flows at 2.10 {sup 15} n/cm{sup 2}.s; a chemical separation of elements burning in thermal (americium) from the elements needing a flow of fast neutrons. (N.C.). 28 refs.

  5. Electrochemical oxidation of 243Am(III) in nitric acid by a terpyridyl-derivatized electrode

    Energy Technology Data Exchange (ETDEWEB)

    Dares, C. J.; Lapides, A. M.; Mincher, B. J.; Meyer, T. J.


    A high surface area, tin-doped indium oxide electrode surface-derivatized with a terpyridine ligand has been applied to the oxidation of trivalent americium to Am(V) and Am(VI) in nitric acid. Potentials as low as 1.8 V vs. the saturated calomel electrode are used, 0.7 V lower than the 2.6 V potential for one-electron oxidation of Am(III) to Am(IV) in 1 M acid. This simple electrochemical procedure provides, for the first time, a method for accessing the higher oxidation states of Am in non-complexing media for developing the coordination chemistries of Am(V) and Am(VI) and, more importantly, for separation of americium from nuclear waste streams.

  6. Translations from the Soviet Journal of Atomic Energy (United States)


    brain and nervous system tumors is accomplished through the use of radio- active isotopes of radon, xenon, and iodine. External irradiation techniques...production of toxic chemicals. The radioactive technique cf obtaining bexachliorane has a number of advantages over the photochemical techni- 1 13 qu. Nuclear...nuclear fuels and contains results of studies on the chemistry of ruth- enium, thorium , uranium, plutoniuin and americium. Also treated are the problems

  7. Extractant Design by Covalency

    Energy Technology Data Exchange (ETDEWEB)

    Gaunt, Andrew James [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Olson, Angela Christine [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Kozimor, Stosh Anthony [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Cross, Justin Neil [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Batista, Enrique Ricardo [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Macor, Joe [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Univ. of Illinois, Urbana-Champaign, IL (United States); Peterman, Dean R. [Idaho National Lab. (INL), Idaho Falls, ID (United States); Grimes, Travis [Idaho National Lab. (INL), Idaho Falls, ID (United States)


    This project aims to provide an electronic structure-to-function understanding of extractants for actinide selective separation processes. The research entails a multi-disciplinary approach that integrates chemical syntheses, structural determination, K-edge X-ray Absorption Spectroscopy (XAS), and Density Functional Theory (DFT) calculations. In FY15, the project reached the final stage of testing the extraction performance of a new ligand design and preparing an americium-extractant complex for analysis.

  8. Gas-phase energies of actinide oxides -- an assessment of neutral and cationic monoxides and dioxides from thorium to curium

    Energy Technology Data Exchange (ETDEWEB)

    Marcalo, Joaquim; Gibson, John K.


    An assessment of the gas-phase energetics of neutral and singly and doubly charged cationic actinide monoxides and dioxides of thorium, protactinium, uranium, neptunium, plutonium, americium, and curium is presented. A consistent set of metal-oxygen bond dissociation enthalpies, ionization energies, and enthalpies of formation, including new or revised values, is proposed, mainly based on recent experimental data and on correlations with the electronic energetics of the atoms or cations and with condensed-phase thermochemistry.

  9. Bibliography of PNL publications in management of radioactive wastes, subject-indexed (alphabetically) and listed chronologically (latest issues first)

    Energy Technology Data Exchange (ETDEWEB)

    Powell, J.A. (ed.)


    The citations are arranged under: actinides, alpha particles, americium, beta particles, calcination, cements, ceramics, cesium, containers, decontamination, evaporation, fluidized bed, glass, ground release, high-level wastes, incinerators, liquid wastes, marine disposal, melting, nonradioactive waste disposal, Pu, radiation doses, radiation protection, disposal, processing, radionuclide migration, Ru, safety, separation processes, soils, solidification, solid wastes, stack disposal, temperature, thermal conductivity, transmutation, tritium, underground disposal, U, volatility, and waste disposal/management/processing/storage/transportation. (DLC)

  10. Actinide partitioning and transmutation program. Progress report, July 1--September 30, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Tedder, D.W.; Blomeke, J.O. (comps.)


    In Purex process modifications, two cold runs with mixer-settlers were made on the extraction and stripping of ruthenium and zirconium without the presence of uranium. Efforts in actinide recovery from solids were directed toward the determination of dissolution parameters in various reagents for /sup 241/Am and /sup 239/Pu oxide mixtures, /sup 233/U oxide, /sup 237/Np oxide, /sup 244/Cm oxide, /sup 232/Th oxide, and PuO/sub 2/. Studies in americium-curium recovery with OPIX (oxalate precipitation and ion exchange), Talspeak, and cation exchange chromatography focused on the feasibility of forming oxalate precipitates in continuous systems, the effects of zirconium on Talspeak, and methods for removing solvent degradation products of the Talspeak system. In studies of americium-curium recovery using bidentate extractants, additional distribution coefficients for actinides and other key elements between reduced synthetic LWR waste solution and 30 percent dihexyl-N, N-diethyl-carbamylmethylene phosphonate in diisopropylbenzene were measured. Studies in the americium-curium recovery using inorganic ion exchange media to determine the pH dependence of lanthanide ion affinity for niobate, titanate, and zirconate ion exchange materials have been completed. A modified flowsheet for the extraction of uranium, neptunium, plutonium, americium, and curium from high-level liquid waste is presented. Evaluation of methods for measuring actinides from incinerator ash is continuing. A preliminary evaluation of methods for treatment of salt waste and waste waters was completed. In thermal reactor transmutation studies, waste actinides from an LWR lattice containing mixed uranium-plutonium assemblies were recycled in separate target assemblies. (LK)

  11. Research in radiobiology. Annual report of work in progress in the internal irradiation program

    Energy Technology Data Exchange (ETDEWEB)


    The toxicity, retention, biological effects, distribution, decorporation and measuring techniques of radionuclides are discussed. Calculations of trabecular bone formation rates from tetracycline labeling is included. The characteristics of trabecular bone in the Rhesus monkey are discussed. Studies on the early retention and distribution of radium 224 in beagles are included. Studies on the decorporation of plutonium and americium in dogs by DTPA and salicylic acid are presented.

  12. Evaluation of the neutral comet assay for detection of alpha-particle induced DNA-double-strand-breaks; Evaluation des Comet Assays bei neutralem pH zur Detektion von α-Partikel induzierten DNA-Doppelstrangbruechen

    Energy Technology Data Exchange (ETDEWEB)

    Hofbauer, Daniela


    Aim of this study was to differentiate DNA-double-strand-breaks from DNA-single-strand-breaks on a single cell level, using the comet assay after α- and γ-irradiation. Americium-241 was used as a alpha-irradiation-source, Caesium-137 was used for γ-irradiation. Because of technical problems with both the neutral and alkaline comet assay after irradiation of gastric cancer cells and human lymphocytes, no definite differentiation of DNA-damage was possible.

  13. Theoretical and experimental evaluation of waste transport in selected rocks: 1977 annual report of LBL Contract No. 45901AK. Waste Isolation Safety Assessment Program: collection and generation of transport data

    Energy Technology Data Exchange (ETDEWEB)

    Apps, J.A.; Benson, L.V.; Lucas, J.; Mathur, A.K.; Tsao, L.


    During fiscal year 1977, the following subtasks were performed. (1) Thermodynamic data were tabulated for those aqueous complexes and solid phases of plutonium, neptunium, americium, and curium likely to form in the environment. (2) Eh-pH diagrams were computed and drafted for plutonium, neptunium, americium and curium at 25/sup 0/C and one atmosphere. (3) The literature on distribution coefficients of plutonium, neptunium, americium, and curium was reviewed. (4) Preliminary considerations were determined for an experimental method of measuring radionuclide transport in water-saturated rocks. (5) The transport mechanisms of radionuclides in water-saturated rocks were reviewed. (6) A computer simulation was attempted of mass transfer involving actinides in water-saturated rocks. Progress in these tasks is reported. Subtasks 1, 2, 3, and 4 are complete. The progress made in subtask 5 is represented by an initial theoretical survey to define the conditions needed to characterize the transport of radionuclides in rocks. Subtask 6 has begun but is not complete.

  14. In situ radiological surveying at the Double Tracks site, Nellis Air Force Range, Tonopah, Nevada

    Energy Technology Data Exchange (ETDEWEB)

    Riedhauser, S.R.; Tipton, W.J.


    A team from the Remote Sensing Laboratory conducted a series of in situ radiological measurements at the Double Tracks site on the Nellis Air Force Range just east of Goldfield, Nevada, during the periods of April 10-13 and June 5-9, 1995. The survey team measured the terrestrial gamma radiation at the site to determine the levels of natural and man-made radiation. This site includes the areas covered by previous surveys conducted from 1962 through 1993. The main purpose of the first expedition was to assess several new techniques for characterizing sites with dispersed plutonium. The two purposes of the second expedition were to characterize the distribution of transuranic contamination (primarily plutonium) at the site by measuring the gamma rays from americium-241 and to assess the performance of the two new detector platforms. Both of the new platforms performed well, and the characterization of the americium-241 activity at the site was completed. Several plots compare these ground-based system measurements and the 1993 aerial data. The agreement is good considering the systems are characterized and calibrated through independent means. During the April expedition, several methods for measuring the depth distribution of americium-241 in the field were conducted as a way of quickly and reliably obtaining depth profiles without the need to wait for laboratory analysis. Two of the methods were not very effective, but the results of the third method appear very promising.

  15. Alkali Treatment of Acidic Solution from Hanford K Basin Sludge Dissolution

    Energy Technology Data Exchange (ETDEWEB)

    AA Bessonov; AB Yusov; AM Fedoseev; AV Gelis; AY Garnov; CH Delegard; GM Plavnik; LN Astafurova; MS Grigoriev; NA Budantseva; NN Krot; SI Nikitenko; TP Puraeva; VP Perminov; VP Shilov


    Nitric acid solutions will be created from the dissolution of Hanford K Basin sludge. These acidic dissolver solutions must be made alkaline by treatment with NaOH solution before they are disposed to ~ the Tank Waste Remediation System on the Hanford Site. During the alkali treatments, sodium diuranate, hydroxides of iron and aluminum, and radioelements (uranium, plutonium, and americium) will precipitate from the dissolver solution. Laboratory tests, discussed here, were pefiormed to provide information on these precipitates and their precipitation behavior that is important in designing the engineering flowsheet for the treatment process. Specifically, experiments were conducted to determine the optimum precipitation conditions; the completeness of uranium, plutonium, and americium precipitation; the rate of sedimentation; and the physico-chemical characteristics of the solids formed by alkali treatment of simulated acidic dissolver solutions. These experiments also determined the redistribution of uranium, plutonium, and americium flom the sodium di~ate and iron and al&inurn hydroxide precipitates upon contact with carbonate- and EDTA-bearing simulated waste solutions. Note: EDTA is the tetrasodium salt of ethylenediaminetetraacetate.

  16. Structural and magnetic phase transitions in triclinic Ca10(FeAs)10(Pt3As8). (United States)

    Stürzer, T; Friederichs, G M; Luetkens, H; Amato, A; Klauss, H-H; Johrendt, Dirk


    We report the structural and magnetic phase transitions of triclinic Ca10(FeAs)10(Pt3As8), which is the parent compound of the 1038-type iron-arsenide superconductors. High-resolution x-ray diffraction reveals splitting of the in-plane (a,b) lattice parameters at T(s) ≈ 120 K. Platinum-doping weakens the distortion and shifts the transition temperature to 80 K in Ca10(Fe(1-x)Pt(x)As)10(Pt3As8) with x = 0.03. μSR experiments show the onset of magnetic order near T and a broad magnetic phase transition. The structural transition involves no reduction of the space group symmetry in contrast to the other parent compounds of iron-arsenide superconductors; nevertheless the local fourfold symmetry of the FeAs-layers in Ca10(FeAs)10(Pt3As8) is broken.

  17. Multi-spectral optical absorption in substrate-free nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Junpeng; Chia, Andrew; Boulanger, Jonathan; LaPierre, Ray, E-mail: [Department of Engineering Physics, McMaster University, 1280 Main St. West, Hamilton, Ontario L8S 4L7 (Canada); Dhindsa, Navneet; Khodadad, Iman; Saini, Simarjeet [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Ave West, Waterloo, Ontario N2L 3G1 (Canada); Waterloo Institute of Nanotechnology, University of Waterloo, 200 University Ave West, Waterloo, Ontario N2L 3G1 (Canada)


    A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled diameter and period by reactive ion etching of a GaAs substrate containing an indium gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire length to be controlled. The substrate is subsequently removed by selective etching, using the same InGaP etch stop layer, to create a substrate-free GaAs nanowire array. The optical absorptance of the nanowire array was then directly measured without absorption from a substrate. We directly observe absorptance spectra that can be tuned by the nanowire diameter, as explained with rigorous coupled wave analysis. These results illustrate strong optical absorption suitable for nanowire-based solar cells and multi-spectral absorption for wavelength discriminating photodetectors. The solar-weighted absorptance above the bandgap of GaAs was 94% for a nanowire surface coverage of only 15%.

  18. Performance measurement of low concentration ratio solar array for space application (United States)

    Mills, M. W.


    The measured performance of a silicon and a gallium arsenide low concentration ratio solar array (LCRSA) element is presented. The element characteristics measured in natural sunlight are off pointing performance and response to mechanical distortions. Laboratory measurements of individual silicon and gallium-arsenide solar cell assemblies are also made. The characteristics measured in the laboratory involved responses to temperature and intensity variations as well as to the application of reverse bias potentials. The element design details covered include the materials, the solar cells, and the rationale for selecting these specific characteristics. The measured performance characteristics are contrasted with the predicted values for both laboratory testing and high altitude natural sunlight testing. Excellent agreement between analytical predictions and measured performance is observed.

  19. Modelling and fabrication of GaAs photonic-crystal cavities for cavity quantum electrodynamics. (United States)

    Khankhoje, U K; Kim, S-H; Richards, B C; Hendrickson, J; Sweet, J; Olitzky, J D; Khitrova, G; Gibbs, H M; Scherer, A


    In this paper, we present recent progress in the growth, modelling, fabrication and characterization of gallium arsenide (GaAs) two-dimensional (2D) photonic-crystal slab cavities with embedded indium arsenide (InAs) quantum dots (QDs) that are designed for cavity quantum electrodynamics (cQED) experiments. Photonic-crystal modelling and device fabrication are discussed, followed by a detailed discussion of different failure modes that lead to photon loss. It is found that, along with errors introduced during fabrication, other significant factors such as the presence of a bottom substrate and cavity axis orientation with respect to the crystal axis, can influence the cavity quality factor (Q). A useful diagnostic tool in the form of contour finite-difference time domain (FDTD) is employed to analyse device performance.

  20. Normal-state charge dynamics in doped BaFe2As2: Roles of doping and necessary ingredients for superconductivity (United States)

    Nakajima, M.; Ishida, S.; Tanaka, T.; Kihou, K.; Tomioka, Y.; Saito, T.; Lee, C. H.; Fukazawa, H.; Kohori, Y.; Kakeshita, T.; Iyo, A.; Ito, T.; Eisaki, H.; Uchida, S.


    In high-transition-temperature superconducting cuprates and iron arsenides, chemical doping plays an important role in inducing superconductivity. Whereas in the cuprate case, the dominant role of doping is to inject charge carriers, the role for the iron arsenides is complex owing to carrier multiplicity and the diversity of doping. Here, we present a comparative study of the in-plane resistivity and the optical spectrum of doped BaFe2As2, which allows for separation of coherent (itinerant) and incoherent (highly dissipative) charge dynamics. The coherence of the system is controlled by doping, and the doping evolution of the charge dynamics exhibits a distinct difference between electron and hole doping. It is found in common with any type of doping that superconductivity with high transition temperature emerges when the normal-state charge dynamics maintains incoherence and when the resistivity associated with the coherent channel exhibits dominant temperature-linear dependence. PMID:25077444

  1. Electron correlations in Mn(x)Ga(1-x)A(s)as seen by resonant electron spectroscopy and dynamical mean field theory. (United States)

    Di Marco, I; Thunström, P; Katsnelson, M I; Sadowski, J; Karlsson, K; Lebègue, S; Kanski, J; Eriksson, O


    After two decades since the discovery of ferromagnetism in manganese-doped gallium arsenide, its origin is still debated, and many doubts are related to the electronic structure. Here we report an experimental and theoretical study of the valence electron spectrum of manganese-doped gallium arsenide. The experimental data are obtained through the differences between off- and on-resonance photo emission data. The theoretical spectrum is calculated by means of a combination of density-functional theory in the local density approximation and dynamical mean field theory, using exact diagonalization as impurity solver. Theory is found to accurately reproduce measured data and illustrates the importance of correlation effects. Our results demonstrate that the manganese states extend over a broad range of energy, including the top of the valence band, and that no impurity band splits-off from the valence band edge, whereas the induced holes seem located primarily around the manganese impurity.

  2. Zero-field optical manipulation of magnetic ions in semiconductors. (United States)

    Myers, R C; Mikkelsen, M H; Tang, J-M; Gossard, A C; Flatté, M E; Awschalom, D D


    Controlling and monitoring individual spins is desirable for building spin-based devices, as well as implementing quantum information processing schemes. As with trapped ions in cold gases, magnetic ions trapped on a semiconductor lattice have uniform properties and relatively long spin lifetimes. Furthermore, diluted magnetic moments in semiconductors can be strongly coupled to the surrounding host, permitting optical or electrical spin manipulation. Here we describe the zero-field optical manipulation of a few hundred manganese ions in a single gallium arsenide quantum well. Optically created mobile electron spins dynamically generate an energy splitting of the ion spins and enable magnetic moment orientation solely by changing either photon helicity or energy. These polarized manganese spins precess in a transverse field, enabling measurements of the spin lifetimes. As the magnetic ion concentration is reduced and the manganese spin lifetime increases, coherent optical control and readout of single manganese spins in gallium arsenide should be possible.

  3. Effective Ex-situ Fabrication of F-Doped SmFeAsO Wire for High Transport Critical Current Density (United States)

    Fujioka, Masaya; Kota, Tomohiro; Matoba, Masanori; Ozaki, Toshinori; Takano, Yoshihiko; Kumakura, Hiroaki; Kamihara, Yoichi


    We demonstrate the fabrication of superconducting SmFeAsO1-xFx (Sm-1111) wires by using the ex-situ powder-in-tube technique. Sm-1111 powder and a binder composed of SmF3, samarium arsenide, and iron arsenide were used to synthesize the superconducting core. Although the F content of Sm-1111 is reduced in the process of ex-situ fabrication, the binder compensates by sufficiently supplementing the F content, thereby preventing a decrease in the superconducting transition temperature and a shrinkage of the superconducting volume fraction. Thus, in the superconducting Sm-1111 wire with the binder, the transport critical current density reaches the highest value of ˜4 kA/cm2 at 4.2 K.

  4. Coherent Cancellation of Photothermal Noise in GaAs/Al$_{0.92}$Ga$_{0.08}$As Bragg Mirrors

    CERN Document Server

    Chalermsongsak, Tara; Cole, Garrett D; Follman, David; Seifert, Frank; Arai, Koji; Gustafson, Eric K; Smith, Joshua R; Aspelmeyer, Markus; Adhikari, Rana X


    Thermal noise is a limiting factor in many high-precision optical experiments. A search is underway for novel optical materials with reduced thermal noise. One such pair of materials, gallium arsenide and aluminum-alloyed gallium arsenide (collectively referred to as AlGaAs), shows promise for its low Brownian noise when compared to conventional materials such as silica and tantala. However, AlGaAs has the potential to produce a high level of thermo-optic noise. We have fabricated a set of AlGaAs crystalline coatings, transferred to fused silica substrates, whose layer structure has been optimized to reduce thermo-optic noise by inducing coherent cancellation of the thermoelastic and thermorefractive effects. By measuring the photothermal transfer function of these mirrors, we find evidence that this optimization has been successful.

  5. Commercial-Off-The-Shelf (COTS) Indirect Energy Conversion Isotope (IDEC) Design Structure and Power Management (United States)


    arsenide GPS global positioning system 3H tritium iBAT isotope batteries InGaP indium gallium phosphide LiSoCl2 lithium thionyl chloride PV... lithium thionyl chloride (LiSoCl2), the operating energy starts off comparably well compared with 3H, but a steep drop-off occurs near the end of life...The internal assembly and structure replicate a typical lithium battery design. The overall design, material selection, and components of the battery

  6. The growth of materials processing in space - A history of government support for new technology (United States)

    Mckannan, E. C.


    Development of a given technology for national defense and large systems developments when the task is too large or risky for entrepreneurs, yet is clearly in the best interest of the nation are discussed. Advanced research to identify areas of interest was completed. Examples of commercial opportunities are the McDonnell-Douglas Corporation purification process for pharmaceutical products and the Microgravity Research Associates process for growing gallium arsenide crystals in space.

  7. Potential means of support for materials processing in space. A history of government support for new technology (United States)

    Mckannan, E. C.


    Development of a given technology for national defense and large systems developments when the task is too large or risky for entrepreneurs, yet is clearly in the best interest of the nation are discussed. Advanced research to identify areas of interest was completed. Examples of commercial opportunities are the McDonnell-Douglas Corporation purification process for pharmaceutical products and the Microgravity Research Associates process for growing gallium arsenide crystals in space.

  8. Beer-Lambert-Law Parametric Model of Reflectance Spectra for Dyed Fabrics (United States)


    electromagnetic spectrum. Devices such as Gen 3 Extended Blue Night Vision (NV) devices have increased spectral response from the visual to NIR...the fact that certain NIR dye treatments fail to provide effective contrast matching in the SWIR spectrum. Advances in detector technologies, e.g...region and an Indium Gallium Arsenide (InGaAs) detector for the NIR- SWIR (860 - 2500 nm) region. Radiation sources included a deuterium lamp for

  9. Air Force Research Laboratory Success Stories: A Review of 1997/1998 (United States)


    within JMASS Architecture ................ 39 Space Vehicles Page # Sodium- Sulfer Battery Cells Offer Substantial Advantages for Energy Storage...arsenide on germanium (GaAs/Ge) and the lithium -thionyl chloride (Li-SOC12) batteries powered the Mars rover and the lander carried by the Pathfinder... lithium niobate to split a pump photon at 1.064 Ptm into a signal photon at 1.45 jtm and an idler photon at 4 ^tm. The wavelengths of the signal and

  10. High T(c) electron doped Ca10(Pt3As8)(Fe2As2)5 and Ca10(Pt4As8)(Fe2As2)5 superconductors with skutterudite intermediary layers. (United States)

    Ni, Ni; Allred, Jared M; Chan, Benny C; Cava, Robert Joseph


    It has been argued that the very high transition temperatures of the highest T(c) cuprate superconductors are facilitated by enhanced CuO(2) plane coupling through heavy metal oxide intermediary layers. Whether enhanced coupling through intermediary layers can also influence T(c) in the new high T(c) iron arsenide superconductors has never been tested due the lack of appropriate systems for study. Here we report the crystal structures and properties of two iron arsenide superconductors, Ca(10)(Pt(3)As(8))(Fe(2)As(2))(5) (the "10-3-8 phase") and Ca(10)(Pt(4)As(8))(Fe(2)As(2))(5) (the "10-4-8 phase"). Based on -Ca-(Pt(n)As(8))-Ca-Fe(2)As(2)- layer stacking, these are very similar compounds for which the most important differences lie in the structural and electronic characteristics of the intermediary platinum arsenide layers. Electron doping through partial substitution of Pt for Fe in the FeAs layers leads to T(c) of 11 K in the 10-3-8 phase and 26 K in the 10-4-8 phase. The often-cited empirical rule in the arsenide superconductor literature relating T(c) to As-Fe-As bond angles does not explain the observed differences in T(c) of the two phases; rather, comparison suggests the presence of stronger FeAs interlayer coupling in the 10-4-8 phase arising from the two-channel interlayer interactions and the metallic nature of its intermediary Pt(4)As(8) layer. The interlayer coupling is thus revealed as important in enhancing T(c) in the iron pnictide superconductors.

  11. Electrosprayed Heavy Ion and Nanodrop Beams for Surface Engineering and Electrical Propulsion (United States)


    arsenide, gallium antimonide, gallium nitride and silicon carbide; studied the role of the liquid’s composition on the sputtering of silicon; study...hence can easily be contaminated , especially as they tend to hydrolyze when stored in the presence of water for a significant time. The other anions...emissions are very infrequent. 4.4 Water Contamination of Ionic Liquids Additional molecular dynamics simulations have been run with water introduced into

  12. Critical Review and Technology Assessments, 󈨟-󈨠 (United States)



  13. SPS Energy Conversion Power Management Workshop (United States)


    Energy technology concerning photovoltaic conversion, solar thermal conversion systems, and electrical power distribution processing is discussed. The manufacturing processes involving solar cells and solar array production are summarized. Resource issues concerning gallium arsenides and silicon alternatives are reported. Collector structures for solar construction are described and estimates in their service life, failure rates, and capabilities are presented. Theories of advanced thermal power cycles are summarized. Power distribution system configurations and processing components are presented.

  14. Experimental '' of As at 170, 200, 250 and 300 K from the Bijvoet pairs of GaAs

    Indian Academy of Sciences (India)

    G Raja Sudha; K Vimala Devi; D Arthi; S Prasanna Subramanian; N Srinivasan; R Saravanan


    Anomalous dispersion effects lead to the modification of the measured X-ray structure factors. In this work, we have determined the imaginary part of the anomalous dispersion correction terms ('' ) of arsenide atom (As), through the X-ray data collected using spherical single crystal of GaAs, at various temperatures, i.e. 170, 200, 250 and 300 K. It is stressed that more measurements of '' of the elements are needed to confirm the theoretical calculations.

  15. Pilot-Vehicle Interface (United States)


    mask CRTs. 4.2.8 Light Emitting Diode Displays The Light Emitting Diode (LED) is a semiconductor diode, based on the Gallium Arsenide (GaAs) compound...icons versus alphanumerics for cockpit displays. Camacho , Steiner, and Berson (1990) found that reaction times were faster for icons. Possibly this...preference for icons. Additional findings indicate (Steiner and Camacho 1989): * Increasing use of icons adds pictorial realism to displays and aids

  16. Stability of the GaAs based Hall sensors irradiated by gamma quanta


    Gradoboev, Aleksandr Vasilyevich; Karlova, G. F.


    The present work is aimed at investigation of the stability of the GaAsbased Hall sensors (pickups) to irradiation by gamma quanta. The examined objects are the gallium arsenide based Hall sensors manufactured on thin active layers by the methods of vaporphase epitaxy (VPE), molecular beam epitaxy, and ion implantation. Our research methodology involves measurements of the volt-ampere characteristics (VACs) of all sensors for different values of the supply voltage polarity and electron concen...

  17. Growing Single Crystals of Compound Semiconductors (United States)

    Naumann, Robert J.; Lehoczky, Sandor L.; Frazier, Donald O.


    Defect reduced by preventing melt/furnace contact and suppressing convention. Large crystals of compound semiconductors with few defects grown by proposed new method. Such materials as gallium arsenide and cadmium telluride produced, with quality suitable for very-large-scale integrated circuits or for large focal-plane arrays of photodetectors. Method used on small scale in Earth gravity, but needs microgravity to provide crystals large enough for industrial use.

  18. 0.15-micron Gallium Nitride (GaN) Microwave Integrated Circuit Designs Submitted to TriQuint Semiconductor for Fabrication (United States)


    arsenide GaN gallium nitride LNA low-noise amplifier MMIC monolithic microwave integrated circuit PA power amplifier HEMT high electron mobility...0.15-µm Gallium Nitride ( GaN ) Microwave Integrated Circuit Designs Submitted to TriQuint Semiconductor for Fabrication by John Penn ARL...MD 20783-1197 ARL-TN-0496 September 2012 0.15-µm Gallium Nitride ( GaN ) Microwave Integrated Circuit Designs Submitted to TriQuint

  19. Optical Processing and Control (United States)


    interfaces(7]. The effect has been used to provide evidence for surface states on semiconductors using germanium and silicon surfaces(8]. 3.1 References...8f, c ndr where Sf& is the beat frequency of the ring laser due to the moving medium, f is the frequency of the propagating beam, c is the velocity...Tantalate Gallium Arsenide Phosphide Tantalum Pentoxide Gallium Aluminum Nitride Niobium Pentoxide Indium Phosphide Silicon Other III-V, II-VI, etc

  20. Hot Electron Effects of Importance for Micron and Submicron Devices. (United States)


    semiconductor larger. At such field strengths silicon have a picture of a highly mobile fluid gallium arsenide.2 For a free particle, and germanium ...into the AI.Ga,_,As layers is taken into account. The results of the calculations show that the threshold electric field for the onset of NDR and the...differential resistance ( NDR ) in semiconductor EFt position-dependent Quasi-Fermi level in the heterostructurestl]. The basic structure of this device

  1. Environmental Assessment: For the Testing and Evaluation of Directed Energy System Using Laser Technology, Edwards Air Force Base (United States)


    yttrium lithium 15 fluoride (YLF), titanium -sapphire], semiconductor [gallium arsenide], or dye); 16 • Mode of Operation (continuous wave, pulsed [ɘ.25... pickling liquor, unspent acids, unspent alkalis, and 21 unrinsed empty containers of iron or steel used for pesticides or other hazardous chemicals. 22...aluminum, titanium , wood, plastic, 13 or steel. These target boards would have attached sensors and/or data collection array to support the test 14 and

  2. Fabrication and optical characterization of macroporous silicon photonic crystals


    Balbo, Matteo


    The computer revolution experienced in recent years has been possible thanks to semiconductor materials, such as silicon, germanium and gallium arsenide. The success of the silicon-based microelectronics is due to the ability to integrate multiple elements on the same chip such as processors, memories, and interfaces. However, the increasing miniaturization and the realization of faster devices have revealed the difficulty to overcome the intrinsic limits of these materials. For example, devi...

  3. Measurement of silicon and GaAs/Ge solar cells ac parameters

    Energy Technology Data Exchange (ETDEWEB)

    Deshmukh, M.P.; Nagaraju, J. [Indian Institute of Science, Bangalore (India). Dept. of Instrumentation


    The ac parameters (cell capacitance and cell resistance) of Silicon (Si) and Gallium Arsenide (GaAs/Ge) solar cells are measured at different temperatures using time domain technique. The cell capacitance is calculated from the Open circuit voltage decay (OCVD) and the cell resistance from solar cell I-V characteristics measured under dark condition. It is observed that the solar cell capacitance increases whereas the cell resistance decreases with increase in temperature. (author)

  4. Impurity and Defect Behavior in High-Purity Epitaxial GaAs. (United States)


    Japanese Journal of Applied Physics 9, 156 (1970). -113- 11. T...Saito and F. Hasegawa, "Cause of the High Resis- tance Region at Vapour Epitaxial GaAs Layer-Sub- strate Interface", Japanese Journal of Applied Physics 10...Ryuzan, "Electrical Prop- erties of n-Type Gallium Arsenide at High Tempera- tures", Japanese Journal of Applied Physics 10, 392 (1971). 35. P.

  5. Thin film solar cells. (Latest citations from the NTIS bibliographic database). Published Search

    Energy Technology Data Exchange (ETDEWEB)



    The bibliography contains citations concerning research and development of high-efficiency and low-cost thin film solar cells. References discuss the design and fabrication of silicon, gallium arsenide, copper selenide, indium selenide, cadmium telluride, and copper indium selenide solar cells. Applications in space and utilities are examined. Government projects and foreign technology are also reviewed. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

  6. Space station automation study. Automation requirements derived from space manufacturing concepts. Volume 1: Executive summary (United States)


    The two manufacturing concepts developed represent innovative, technologically advanced manufacturing schemes. The concepts were selected to facilitate an in depth analysis of manufacturing automation requirements in the form of process mechanization, teleoperation and robotics, and artificial intelligence. While the cost effectiveness of these facilities has not been analyzed as part of this study, both appear entirely feasible for the year 2000 timeframe. The growing demand for high quality gallium arsenide microelectronics may warrant the ventures.

  7. A RHEED/MBE-STM investigation of the static and dynamic InAs(001) surface (United States)

    Bomphrey, J. J.; Ashwin, M. J.; Jones, T. S.


    We report here the temperature-dependent incorporation kinetics of dimeric arsenic in InAs(001) homoepitaxy, using reflection high-energy electron diffraction (RHEED). Surface reconstructions, in combination with the RHEED investigation have provided insight into the growth of InAs(001), developing an accurate method of controlling the V:III ratio, which has been utilised to probe the low temperature epitaxial growth of indium arsenide epitaxial layers.

  8. Artificial Earth Satellites Designed and Fabricated by The Johns Hopkins University Applied Physics Laboratory. Revised (United States)


    first gallium arsenide solar cell was orbited on ANNA-lB. The predicted sublimation rates of biphenyl, camphor , and napthalene were contirmed in the...orientation of the gravity gradient because of the thrust of subliming biphenyl at the end of the 100-foot boom. This resulted in a 25 dB reduction in the...SDO 1600 APPLIED PHYSICS LABORATORY LAUREL MARYLAND Solar cell experiments Subliming materials experiment 352-bit magnetic core shift register memory

  9. Description of an Immersed Photovoltaic Concentrating Solar Power System


    Falbel, Gerald


    Recent advancements in photovoltaic solar cells made from Gallium Arsenide (GaAs) have shown that with concentration ratios greater than one solar constant, overall efficiencies up to 23% can be achieved. A second issue applicable to solar power systems for spacecraft is the cost driver, which requires that the efficiency/weight ratio be improved so that solar panels with high output, weighing less, will reduce payload weights, which, in turn, reduces launch costs. This has resulted in a "Fig...

  10. Electronic Structures and Magnetic Properties of CoN, NiN and CuN

    Institute of Scientific and Technical Information of China (English)

    WANG Hong-Bo; XUE De-Sheng


    @@ Electronic structures and magnetic properties of CoN, NiN and CuN in zinc-blende, rocksalt, nickel arsenide,wurtzite and caesium chloride structures have been calculated by employing a first-principle full-potential linearized muffin-tin orbital method with the generalized gradient approximation. The results reveal that the zinc-blende structure is the ground state for the three mononitrides.

  11. Interface dynamics and crystal phase switching in GaAs nanowires


    Jacobsson, Daniel; Panciera, Federico; Tersoff, Jerry; Reuter, Mark C.; Lehmann, Sebastian; Hofmann, Stephan; Dick, Kimberly A.; Ross, Frances M


    This is the author accepted manuscript. The final version is available from Nature Publishing Group via Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying the fundamental physics of phase selection, and could lead to new electronic applications based on the engineering of crystal phases. Here we image gallium arsenide (GaAs) n...

  12. Low power laser irradiation does not affect the generation of signals in a sensory receptor

    Energy Technology Data Exchange (ETDEWEB)

    Lundeberg, T.; Zhou, J.


    The effect of low power Helium-Neon (He-Ne) and Gallium-Arsenide (Ga-As) laser on the slowly adapting crustacean stretch receptor was studied. The results showed that low power laser irradiation did not affect the membrane potential of the stretch receptor. These results are discussed in relation to the use of low power laser irradiation on the skin overlaying acupuncture points in treatment of pain syndrome.

  13. Anisotropic magnetocapacitance in ferromagnetic-plate capacitors (United States)

    Haigh, J. A.; Ciccarelli, C.; Betz, A. C.; Irvine, A.; Novák, V.; Jungwirth, T.; Wunderlich, J.


    The capacitance of a parallel-plate capacitor can depend on the applied magnetic field. Previous studies have identified capacitance changes induced via classical Lorentz force or spin-dependent Zeeman effects. Here we measure a magnetization direction-dependent capacitance in parallel-plate capacitors where one plate is a ferromagnetic semiconductor, gallium manganese arsenide. This anisotropic magnetocapacitance is due to the anisotropy in the density of states dependent on the magnetization through the strong spin-orbit interaction.

  14. Advanced Space-Based Detectors (United States)


    unique optical properties produce an unexpectedly high opacity for an atomic monolayer. Recent advances in the fabrication techniques of graphene...3D – three-dimensional AEOSS – Advanced Electro- Optical Space Sensors AlGaAs – Aluminum/Galium/Arsenide AlGaSb – Aluminum/Galium/Antimonide CNL...SUPPLEMENTARY NOTES 14. ABSTRACT At the Air Force Research Laboratory, Space Vehicles Directorate, Advanced Electro- Optical Space Sensors (AEOSS) Group, we





    A numerical study is needed to gain insight into the growth mechanism and improve the reactor design or optimize the deposition condition in chemical vapor deposition (CVD). In this study, we have performed a numerical analysis of the deposition of gallium arsenide (GaAs) from trimethyl gallium (TMG) and arsine in a vertical CVD reactor. The effects of operating parameters, such as the rotation velocity of susceptor, inlet velocity, and inlet TMG fraction, are investigated and presented. The ...

  16. Use of a semiconductor-diode laser in urology (United States)

    Watson, Graham M.


    The gallium arsenide semiconductor laser can emit in the near infrared where the depth of penetration into tissue is great although scattering is less than with the Nd:YAG laser. The laser is highly compact. It runs off a normal electrical outlet with no cooling requirement. It is therefore quiet and convenient. The laser has been assessed in a wide variety of applications in our urological department.

  17. Spatial light modulation in compound semiconductor materials (United States)

    Cheng, Li-Jen (Inventor); Gheen, Gregory O. (Inventor); Partovi, Afshin (Inventor)


    Spatial light modulation (22) in a III-V single crystal (12), e.g., gallium arsenide, is achieved using the photorefractive effect. Polarization rotation created by beam coupling is utilized in one embodiment. In particular, information (16)on a control beam (14) incident on the crystal is transferred to an input beam (10), also incident on the crystal. An output beam (18) modulated in intensity is obtained by passing the polarization-modulated input beam through a polarizer (20).

  18. A semiconductor laser excitation circuit

    Energy Technology Data Exchange (ETDEWEB)

    Kaadzunari, O.; Masaty, K.


    A semiconductor laser excitation circuit is patented that is designed for operation in a pulsed mode with a high pulse repetition frequency. This circuit includes, in addition to a semiconductor laser, a high speed photodetector, a reference voltage source, a comparator, and a pulse oscillator and modulator. If the circuit is built using standard silicon integrated circuits, its speed amounts to several hundred megahertz, if it is constructed using gallium arsenide integrated circuits, its speed is several gigahertz.

  19. Investigation of Microwave Monolithic Integrated Circuit (MMIC) non-reciprocal millimeterwave components (United States)

    Talisa, S. H.; Krishnaswamy, S. V.; Adam, J. D.; Yoo, K. C.; Doyle, N. J.


    Two ferrite film deposition techniques were investigated in this program for possible use in the monolithic integration of Gallium Arsenide electronic and magnetic millimeter-wave devices; (1) spin-spray plating (SSP) of nickel zinc ferrite films, and (2) sputtering of barium hexaferrites with C-axis oriented normally to the film plane. The SSP technique potential for this application was demonstrated. Film structural characteristics were studied, as well as their adhesions to other substrates and the conditions for growth of thicker films. Multilayers totalling 25 microns in thickness were grown on semiconducting substrates. The SSP process occurs at about 100 C and was experimentally demonstrated not to damage Gallium arsenide MMIC devices. The magnetic characteristics of these films were comparable to ceramic materials. A scheme for the monolithic integration of magnetic and Gallium arsenide electronic devices was proposed and its feasibility experimentally demonstrated. The films showed higher dielectric loss than was desirable, possibly owing to high water content. A better drying technique is required. Barium ferrite films with C-axis texture were reproducibly grown on sapphire. Magnetic measurements yielded acceptable saturation magnetization and anisotrophy field. Ferromagnetic resonance was not observed, possibly due to broad linewidths.

  20. Heat load of a GaAs photocathode in an SRF electron gun

    Institute of Scientific and Technical Information of China (English)

    WANG Er-Dong; ZHAO Kui; J(o)rg Kewisch; Ilan Ben-Zvi; Andrew Burrill; Trivini Rao; WU Qiong; Animesh Jain; Ramesh Gupta; Doug Holmes


    A great deal of effort has been made over the last decades to develop a better polarized electron source for high energy physics. Several laboratories operate DC guns with a gallium arsenide photocathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved by using a superconducting radio frequency (SRF) electron gun, which delivers beams of a higher brightness than that from DC guns because the field gradient at the cathode is higher. SRF guns with metal and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since a bulk gallium arsenide (GaAs) photocathode is normal conducting, a problem arises from the heat load stemming from the cathode. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and verification by measuring the quality factor of the gun with and without the cathode at 2 K. We simulate heat generation and flow from the GaAs cathode using the ANSYS program. By following the findings with the heat load model, we designed and fabricated a new cathode holder (plug) to decrease the heat load from GaAs.

  1. Circuit quantum electrodynamics with a spin qubit. (United States)

    Petersson, K D; McFaul, L W; Schroer, M D; Jung, M; Taylor, J M; Houck, A A; Petta, J R


    Electron spins trapped in quantum dots have been proposed as basic building blocks of a future quantum processor. Although fast, 180-picosecond, two-quantum-bit (two-qubit) operations can be realized using nearest-neighbour exchange coupling, a scalable, spin-based quantum computing architecture will almost certainly require long-range qubit interactions. Circuit quantum electrodynamics (cQED) allows spatially separated superconducting qubits to interact via a superconducting microwave cavity that acts as a 'quantum bus', making possible two-qubit entanglement and the implementation of simple quantum algorithms. Here we combine the cQED architecture with spin qubits by coupling an indium arsenide nanowire double quantum dot to a superconducting cavity. The architecture allows us to achieve a charge-cavity coupling rate of about 30 megahertz, consistent with coupling rates obtained in gallium arsenide quantum dots. Furthermore, the strong spin-orbit interaction of indium arsenide allows us to drive spin rotations electrically with a local gate electrode, and the charge-cavity interaction provides a measurement of the resulting spin dynamics. Our results demonstrate how the cQED architecture can be used as a sensitive probe of single-spin physics and that a spin-cavity coupling rate of about one megahertz is feasible, presenting the possibility of long-range spin coupling via superconducting microwave cavities.

  2. Influence of Substrate Material on Radiation Characteristics of THz Photoconductive Emitters

    Directory of Open Access Journals (Sweden)

    Jens Klier


    Full Text Available We present in this paper spectral and spatial characteristics of terahertz emission from standard dipole antenna structures used as emitters depending on the substrate material. All antenna structures were lithographically fabricated on low-temperature (LT grown, few-micrometers-thick gallium arsenide (GaAs layers. To investigate the effect of the substrate material on the radiation pattern of terahertz beams, either semi-insulating gallium arsenide or high-resistivity silicon substrate wafers have been used. As detector a standard 40 µm long dipole antenna on a semi-insulating GaAs substrate with a low-temperature grown gallium arsenide layer on it has been employed; this configuration allows for broadband detection and is still efficient enough for the characterization purpose. Strong dependence of the radiation pattern on the substrate used for the terahertz source is demonstrated. The measured patterns and differences between the two cases of substrates are well explained by means of classical diffraction.

  3. High power solid state switches (United States)

    Gundersen, Martin


    We have successfully produced an optically triggered thyristor based in Gallium Arsenide, developed a model for breakdown, and are developing two related devices, including a Gallium Arsenide based static inductor thyristor. We are getting at the basic limitations of Gallium Arsenide for these applications, and are developing models for the physical processes that will determine device limitations. The previously supported gas phase work - resulting in the back-lighted thyratron (BLT) - has actually resulted in a very changed view of how switching can be accomplished, and this is impacting the design of important machines. The BLT is being studied internationally: in Japan for laser fusion and laser isotope separation. ITT has built a BLT that has switched 30 kA at 60 kV in testing at NSWC Dahlgren and the device is being commercialized by another American company. Versions of the switch are now being tested for excimer laser and other applications. Basically, the switch, which arose from pulse power physics studies at USC, can switch more current faster (higher di/dt), with less housekeeping, and with other advantageous properties. There are a large number of other new applications, include kinetic energy weapons, pulsed microwave sources and R.F. accelerators.

  4. Scenarios for the transmutation of actinides in CANDU reactors

    Energy Technology Data Exchange (ETDEWEB)

    Hyland, Bronwyn, E-mail: [Atomic Energy of Canada Limited, Chalk River Laboratories, Chalk River, Ontario, K0J 1J0 (Canada); Gihm, Brian, E-mail: [Atomic Energy of Canada Limited, 2251 Speakman Drive, Mississauga, Ontario, L5K 1B2 (Canada)


    With world stockpiles of used nuclear fuel increasing, the need to address the long-term utilization of this resource is being studied. Many of the transuranic (TRU) actinides in nuclear spent fuel produce decay heat for long durations, resulting in significant nuclear waste management challenges. These actinides can be transmuted to shorter-lived isotopes to reduce the decay heat period or consumed as fuel in a CANDU(R) reactor. Many of the design features of the CANDU reactor make it uniquely adaptable to actinide transmutation. The small, simple fuel bundle simplifies the fabrication and handling of active fuels. Online refuelling allows precise management of core reactivity and separate insertion of the actinides and fuel bundles into the core. The high neutron economy of the CANDU reactor results in high TRU destruction to fissile-loading ratio. This paper provides a summary of actinide transmutation schemes that have been studied in CANDU reactors at AECL, including the works performed in the past. The schemes studied include homogeneous scenarios in which actinides are uniformly distributed in all fuel bundles in the reactor, as well as heterogeneous scenarios in which dedicated channels in the reactor are loaded with actinide targets and the rest of the reactor is loaded with fuel. The transmutation schemes that are presented reflect several different partitioning schemes. Separation of americium, often with curium, from the other actinides enables targeted destruction of americium, which is a main contributor to the decay heat 100-1000 years after discharge from the reactor. Another scheme is group-extracted transuranic elements, in which all of the transuranic elements, plutonium (Pu), neptunium (Np), americium (Am), and curium (Cm) are extracted together and then transmuted. This paper also addresses ways of utilizing the recycled uranium, another stream from the separation of spent nuclear fuel, in order to drive the transmutation of other actinides.

  5. Cleaning up the Legacy of the Cold War: Plutonium Oxides and the Role of Synchrotron Radiation Research

    Energy Technology Data Exchange (ETDEWEB)

    Clark, David Lewis [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)


    The deceptively simple binary formula of AnO2 belies an incredibly complex structural nature, and propensity to form mixed-valent, nonstoichiometric phases of composition AnO2±x. For plutonium, the very formation of PuO2+x has challenged a long-established dogma, and raised fundamental questions for long-term storage and environmental migration. This presentation covers two aspects of Los Alamos synchrotron radiation studies of plutonium oxides: (1) the structural chemistry of laboratory-prepared AnO2+x systems (An = U, Pu; 0 ≤ x ≤ 0.25) determined through a combination of x-ray absorption fine structure spectroscopy (XAFS) and x-ray scattering of laboratory prepared samples; and (2) the application of synchrotron radiation towards the decontamination and decommissioning of the Rocky Flats Environmental Technology Site. Making the case for particle transport mechanisms as the basis of plutonium and americium mobility, rather than aqueous sorption-desorption processes, established a successful scientific basis for the dominance of physical transport processes by wind and water. The scientific basis was successful because it was in agreement with general theory on insolubility of PuO2 in oxidation state IV, results of ultrafiltration analyses of field water/sediment samples, XAFS analyses of soil, sediment, and concrete samples, and was also in general agreement with on-site monitoring data. This understanding allowed Site contractors to rapidly move to application of soil erosion and sediment transport models as the means of predicting plutonium and americium transport, which led to design and application of site-wide soil erosion control technology to help control downstream concentrations of plutonium and americium in streamflow.

  6. Fabrication of uranium-based ceramics using internal gelation for the conversion of trivalent actinides; Herstellung uranbasierter Keramiken mittel interner Gelierung zur Konversion trivalenter Actinoiden

    Energy Technology Data Exchange (ETDEWEB)

    Daniels, Henrik


    Alternative to today's direct final waste disposal strategy of long-lived radionuclides, for example the minor actinides neptunium, americium, curium and californium, is their selective separation from the radioactive wastestream with subsequent transmutation by neutron irradiation. Hereby it is possible to obtain nuclides with a lower risk-potential concerning their radiotoxicity. 1 neutron irradiation can be carried out either with neutron sources or in the next generation of nuclear reactors. Before the treatment, the minor actinides need to be converted in a suitable chemical and physical form. Internal gelation offers a route through which amorphous gel-spheres can be obtained directly from a metal-salt solution. Due to the presence of different types of metal ions as well as changing pH-values in a stock solution, a complex hydrolysis behaviour of these elements before and during gelation occurs. Therefore, investigations with uranium and neodymium as a minor actinide surrogate were carried out. As a result of suitable gelation-parameters, uraniumneodymium gel-spheres were successfully synthesised. The spheres also stayed intact during the subsequent thermal treatment. Based upon these findings, uranium-plutonium and uranium-americium gels were successfully created. For theses systems, the determined parameters for the uraniumneodymium gelation could also be applied. Additionally, investigations to reduce the acidity of uranium-based stock solutions for internal gelation were carried out. The necessary amount of urea and hexamethylenetetramine to induce gelation could hereby be decreased. This lead to a general increase of the gel quality and made it possible to carry out uranium-americium gelation in the first place. To investigate the stability of urea and hexamethylenetetramine, solutions of these chemicals were irradiated with different radiation doses. These chemicals showed a high stability against radiolysis in aqueous solutions.

  7. TRUEX process solvent cleanup with solid sorbents

    Energy Technology Data Exchange (ETDEWEB)

    Tse, Pui-Kwan; Reichley-Yinger, L.; Vandegrift, G.F.


    Solid sorbents, alumina, silica gel, and Amberlyst A-26 have been tested for the cleanup of degraded TRUEX-NPH solvent. A sodium carbonate scrub alone does not completely remove acidic degradation products from highly degraded solvent and cannot restore the stripping performance of the solvent. By following the carbonate scrub with either neutral alumina or Amberlyst A-26 anion exchange resin, the performance of the TRUEX-NPH is substantially restored. The degraded TRUEX-NPH was characterized before and after treatment by supercritical fluid chromatography. Its performance was evaluated by americium distribution ratios, phase-separation times, and lauric acid distribution coefficients. 17 refs., 2 figs., 5 tabs.

  8. Radionuclide concentrations in honey bees from Area G at TA-54 during 1997. Progress report

    Energy Technology Data Exchange (ETDEWEB)

    Haarmann, T.K.; Fresquez, P.R.


    Honey bees were collected from two colonies located at Los Alamos National Laboratory`s Area G, Technical Area 54, and from one control (background) colony located near Jamez Springs, NM. Samples were analyzed for the following: cesium ({sup 137}Cs), americium ({sup 241}Am), plutonium ({sup 238}Pu and {sup 239,240}Pu), tritium ({sup 3}H), total uranium, and gross gamma activity. Area G sample results from both colonies were higher than the upper (95%) level background concentration for {sup 238}Pu and {sup 3}H.

  9. Measurement of the K X-ray absorption jump ratio of erbium by attenuation of a Compton peak

    Energy Technology Data Exchange (ETDEWEB)

    Ayala, A.P.; Mainardi, R.T. [Universidad Nacional de Cordoba (Argentina). Facultad de Matematica, Astronomia y Fisica


    The X-ray absorption jump ratio of erbium was measured with a high resolution intrinsic germanium detector by attenuation, with an erbium foi, of a Compton peak produced by the scattering of the 60 keV americium 241 X-rays. Data analysis consists of a deconvolution to find the true Compton peak shape and an integration of a parameterized expression of the attenuation coefficient adjusted by least squares. Our result has an error of 1.5% and compared with calculated data shows a difference of less than 5%. PACS number(s): 32.80 Fb, 32.80 Cy. (author).

  10. The extraction behaviors of transuranic elements

    Energy Technology Data Exchange (ETDEWEB)

    Byeon, Kee Hoh; Lee, Eil Hee; Kwon, Seon Gil; Kim, Kwang Wook; Yang, Han Beom; Chung, Dong Yong; Lim, Jae Kwan; Shin, Hyun Kyoo; Kim, Soo Ho


    We have studied the distribution data between organic and aqueous phases and the related reaction data in the state of extraction equilibrium for neptunium, americium and curium of transuranic elements, and also studied the chemical properties for these chemical elements. In the results of study, distribution coefficients of transuranic elements such as Np(IV), Np(V), Np(VI) Am(III), CM(III) and the redox reactions of neptunium were rearranged numerically with the data in the published literatures. (author)

  11. 2F Evaporator CP class instrumentation uncertainties evaluations

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, E.


    There are two instrumentation systems in the 2F Evaporator facilities (bldg. 242-16F) that are classified as the Critical Protection (CP). They are the Evaporator Pot Temperature instrumentations and Steam Condensate Gamma Monitor. The pot instrumentation consists of two interrelated circuits sharing the same temperature sensor and transducer. They are the high alarm and interlock circuit and the recorder circuit. The gamma monitor instrumentation consists of four interrelated circuits sharing the same scintillation detector. They are the gamma alarm and interlock circuit, failure alarm and interlock circuit, condensate cesium activity recorder circuit, and condensate americium activity recorder circuit. The resulting uncertainties for the instrument circuits are tabulated. (GHH)

  12. Bidentate organophosphorus extractants: purification, properties and applications to removal of actinides from acidic waste solutions

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, W.W.; McIsaac, L.D.


    At both Hanford and Idaho, DHDECMP (dihexyl-N, N-diethylcarbamylmethylene phosphonate) continuous counter-current solvent extraction processes are being developed for removal of americium, plutonium, and, in some cases, other actinides from acidic wastes generated at these locations. Bench and, eventually, pilot and plant-scale testing and application of these processes have been substantially enhanced by the discovery of suitable chemical and physical methods of removing deleterious impurities from technical-grade DHDECMP. Flowsheet details, as well as various properties of purified DHDECMP extractants, are enumerated.

  13. Features of manufacturing Cd1–xZnxTe ionizing radiation detector

    Directory of Open Access Journals (Sweden)

    Tomashik Z. F.


    Full Text Available The article describes a newly-developed method of manufacturing of an operating element of the Cd1–xZnxTe-detector of ionizing radiation with high sensitivity to low-energy gamma radiation of the americium 241Am radioactive isotope. The proposed two-step method of chemical surface treatment with the use of new bromine releasing polishing etchants significantly improves the quality of the detector material and increases its specific sensitivity to ionizing radiation. This allows to use smaller Cd1–xZnxTe plates, which results in lowering of the cost of detectors.

  14. Comparison of destructive and nondestructive assay of heterogeneous salt residues

    Energy Technology Data Exchange (ETDEWEB)

    Fleissner, J.G.; Hume, M.W.


    To study problems associated with nondestructive assay (NDA) measurements of molten salt residues, a joint study was conducted by the Rocky Flats Plant, Golden, CO and Mound Laboratories, Miamisburg, OH. Extensive NDA measurements were made on nine containers of molten salt residues by both Rocky Flats and Mound followed by dissolution and solution quantification at Rocky Flats. Results of this study verify that plutonium and americium can be measured in such salt residues by a new gamma-ray spectral analysis technique coupled with calorimetry. Biases with respect to the segmented gamma-scan technique were noted.

  15. An in situ survey of Clean Slate 1, 2, and 3, Tonopah Test Range, Central Nevada. Date of survey: September--November 1993

    Energy Technology Data Exchange (ETDEWEB)



    A ground-based in situ radiological survey was conducted downwind of the Clean Slate 1, 2, and 3 nuclear safety test sites at the Tonopah Test Range in central Nevada from September through November 1993. The purpose of the study was to corroborate the americium-241 ({sup 241}Am) soil concentrations that were derived from the aerial radiological survey of the Clean Slate areas, which was conducted from August through October 1993. The presence of {sup 241}Am was detected at 140 of the 190 locations, with unrecoverable or lost data accounting for fifteen (15) of the sampling points. Good agreement was obtained between the aerial and in situ results.

  16. Calculated Bulk Properties of the Actinide Metals

    DEFF Research Database (Denmark)

    Skriver, Hans Lomholt; Andersen, O. K.; Johansson, B.


    Self-consistent relativistic calculations of the electronic properties for seven actinides (Ac-Am) have been performed using the linear muffin-tin orbitals method within the atomic-sphere approximation. Exchange and correlation were included in the local spin-density scheme. The theory explains...... the variation of the atomic volume and the bulk modulus through the 5f series in terms of an increasing 5f binding up to plutonium followed by a sudden localisation (through complete spin polarisation) in americium...

  17. Analysis of nuclear materials by energy dispersive x-ray fluorescence and spectral effects of alpha decay

    Energy Technology Data Exchange (ETDEWEB)

    Worley, Christopher G [Los Alamos National Laboratory


    Energy dispersive X-ray fluorescence (EDXRF) spectra collected from alpha emitters are complicated by artifacts inherent to the alpha decay process, particularly when using portable instruments. For example, {sup 239}Pu EDXRF spectra exhibit a prominent uranium L X-ray emission peak series due to sample alpha decay rather than source-induced X-ray fluorescence. A portable EDXRF instrument was used to collect spectra from plutonium, americium, and a Pu-contaminated steel sample. The plutonium sample was also analyzed by wavelength dispersive XRF to demonstrate spectral differences observed when using these very different instruments.

  18. Dissolution of spent nuclear fuel in carbonate-peroxide solution (United States)

    Soderquist, Chuck; Hanson, Brady


    This study shows that spent UO2 fuel can be completely dissolved in a room temperature carbonate-peroxide solution apparently without attacking the metallic Mo-Tc-Ru-Rh-Pd fission product phase. In parallel tests, identical samples of spent nuclear fuel were dissolved in nitric acid and in an ammonium carbonate, hydrogen peroxide solution. The resulting solutions were analyzed for strontium-90, technetium-99, cesium-137, europium-154, plutonium, and americium-241. The results were identical for all analytes except technetium, where the carbonate-peroxide dissolution had only about 25% of the technetium that the nitric acid dissolution had.

  19. Technical basis for internal dosimetry at Hanford

    Energy Technology Data Exchange (ETDEWEB)

    Sula, M.J.; Carbaugh, E.H.; Bihl, D.E.


    The Hanford Internal Dosimetry Program, administered by Pacific Northwest Laboratory for the US Department of Energy, provides routine bioassay monitoring for employees who are potentially exposed to radionuclides in the workplace. This report presents the technical basis for routine bioassay monitoring and the assessment of internal dose at Hanford. The radionuclides of concern include tritium, corrosion products ({sup 58}Co, {sup 60}Co, {sup 54}Mn, and {sup 59}Fe), strontium, cesium, iodine, europium, uranium, plutonium, and americium,. Sections on each of these radionuclides discuss the sources and characteristics; dosimetry; bioassay measurements and monitoring; dose measurement, assessment, and mitigation and bioassay follow-up treatment. 78 refs., 35 figs., 115 tabs.

  20. Technical basis for internal dosimetry at Hanford

    Energy Technology Data Exchange (ETDEWEB)

    Sula, M.J.; Carbaugh, E.H.; Bihl, D.E.


    The Hanford Internal Dosimetry Program, administered by Pacific Northwest Laboratory for the US Department of Energy, provides routine bioassay monitoring for employees who are potentially exposed to radionuclides in the workplace. This report presents the technical basis for routine bioassay monitoring and the assessment of internal dose at Hanford. The radionuclides of concern include tritium, corrosion products (/sup 58/Co, /sup 60/Co, /sup 54/Mn, and /sup 59/Fe), strontium, cesium, iodine, europium, uranium, plutonium, and americium. Sections on each of these radionuclides discuss the sources and characteristics; dosimetry; bioassay measurements and monitoring; dose measurement, assessment, and mitigation; and bioassay follow-up treatment. 64 refs., 42 figs., 118 tabs.

  1. Radiotoxicological analyses of {sup 239+240}Pu and {sup 241}Am in biological samples by anion-exchange and extraction chromatography: a preliminary study for internal contamination evaluations

    Energy Technology Data Exchange (ETDEWEB)

    Ridone, S.; Arginelli, D.; Bortoluzzi, S.; Canuto, G.; Montalto, M.; Nocente, M.; Vegro, M. [Italian National Agency for New Technologies, Energy and the Environment (ENEA), Research Centre of Saluggia, Radiation Protection Institute, Saluggia, VC (Italy)


    Many biological samples (urines and faeces) have been analysed by means of chromatographic extraction columns, utilising two different resins (AG 1-X2 resin chloride and T.R.U.), in order to detect the possible internal contamination of {sup 239{sup +}}{sup 240}Pu and {sup 241}Am, for some workers of a reprocessing nuclear plant in the decommissioning phase. The results obtained show on one hand the great suitability of the first resin for the determination of plutonium, and on the other the great selectivity of the second one for the determination of americium.

  2. Nitrogen macrocyclic molecules for sequestering of heavy metals; Molecules macrocycliques azotees pour la sequestration de metaux lourds

    Energy Technology Data Exchange (ETDEWEB)

    Chollet, H. [CEA Valduc, 21 - Is-sur-Tille (France); Denat, F.; Guilard, R. [Universite de Bourgogne, LIMSAG, 21 - Dijon (France)


    The tetra-aza-macrocycles and their derivatives have interesting properties in many fields, in particular for heavy metal extraction. Indeed, these ligands are able to complex many metals like uranium, plutonium, americium, cadmium, lead, etc. We describe the evolutions of design of these molecules since a score of years: simplifications of the synthesis leading to the improvement of the outputs, use of intermediate compounds facilitating the transposition at an industrial scale of the production of such molecules. The physicochemical behaviour of these ligands with respect to lanthanides and actinides, and their use within various processes of treatment are evoked. (authors)

  3. Neutron Nuclear Data Evaluation of Actinoid Nuclei for CENDL-3.1

    CERN Document Server

    Guo-Chang, Chen; Bao-Sheng, Yu; Guo-You, Tang; Zhao-Min, Shi; Xi, Tao


    New evaluations for several actinoids of the third version of China Evaluated Nuclear Data Library (CENDL-3.1) have been completed during the period between 2000 and 2005. The evaluations are for all neutron induced reactions with Uranium, Neptunium, Plutonium and Americium in the mass range A=232-241, 236-239, 236-246 and 240-244, respectively, and cover the incident neutron energy up to 20 MeV. In present evaluation, much more efforts were devoted to improve reliability of nuclide for available new measured data, especially scarce experimental data. A general description for the evaluation of several actinoids data were presented.

  4. Suitability Measurement and Analysis for El Centro Naval Air Facility OLS. Opportune Landing Site Program (United States)


    radioactive source at the end of the rod and the detector at the rear of the machine housing. The source rod is extended at 50-mm (2-in.) increments...Systems Workshop Phoenix, AZ, 21–24 April 2008. Stolf, R., R. Klaus, and C. Vaz, 2005, Response to “Comments on ‘Simultaneous Measurement of Soil...americium beryllium radiation source to emit neutrons from the base of the instru- ment. The neutrons collide with water hydrogen atoms and slow. The

  5. Optical Distinctions Between Weyl Semimetal TaAs and Dirac Semimetal Na3Bi: An Ab Initio Investigation (United States)

    Dadsetani, Mehrdad; Ebrahimian, Ali


    We present ab initio a study on linear and nonlinear optical properties of topological semimetal Tantalum arsenide and Sodium bismuthate. The real and imaginary part of the dielectric function in addition to the energy loss spectra of TaAs and Na3Bi have been calculated within random phase approximation (RPA); then, the electron-hole interaction is included by solving the Bethe-Salpeter equation for the electron-hole Green's function. In spite of being in the single category of topological materials, we have found obvious distinction between linear optical responses of TaAs and Na3Bi at a high energy region where, in contrast to Na3Bi, Tantalum arsenide has excitonic peaks at 9 eV and 9.5 eV. It is remarkable that the excitonic effects in the high energy range of the spectrum are stronger than in the lower one. The dielectric function is overall red shifted compared with that of RPA approximation. The resulting static dielectric constants for Na3Bi are smaller than corresponding ones in TaAs. At a low energy region, the absorption intensity of TaAs is more than Na3Bi. The calculated second-order nonlinear optical susceptibilities χ ijk (2) ( ω) show that Tantalum arsenide acts as a Weyl semimetal, and has high values of nonlinear responses in the low energy region which makes it promising candidate for the second harmonic generation in the terahertz frequency region. In the low energy regime, optical spectra are dominated by the 2 ω intra-band contributions.

  6. Nonlinear THz spectroscopy on n-type GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Gaal, Peter


    In this thesis, the ultrafast dynamics of conduction band electrons in semiconductors are investigated by nonlinear terahertz (THz) spectroscopy. In particular, n-doped gallium arsenide samples with doping concentrations in the range of 10{sup 16} cm{sup -3} to 10{sup 17} cm{sup -3} are studied. A novel source for the generation of intense THz radiation is developed which yields single-cycle THz transients with field amplitudes of more then 400 kV/cm. The THz source uses ultrashort optical laser pulses provided by a Ti:sapphire oscillator. In addition, a two-color THz-pump mid-infrared-probe setup is implemented, which allows for two-dimensional time-resolved experiments in the far-infrared wavelength range. Field ionization of neutral shallow donors in gallium arsenide with intense, ultrashort THz pulses and subsequent coherent radiative recombination of electrons to impurity ground states is observed at room temperature. The superradiant decay of the nonlinear polarization results in the emission of a coherent signal with picosecond lifetimes. Such nonlinear signals, which exhibit a lifetime ten times longer than in the linear regime are observed for the first time. At low temperatures and THz field strengths below 5 kV/cm, Rabi flopping on shallow donor transitions is demonstrated. For the first time, the polar electron-LO phonon interaction is directly measured in the quantum kinetic transport regime. Quasi-instantaneous acceleration of conduction band electrons in the polar gallium arsenide lattice by the electric field of intense THz pulses and subsequent probing of the mid-infrared transmission reveals a modulation of the transmission along the THz-mid-infrared delay coordinate with the frequency of the LO phonon. These modulations directly display the relative phase between the electron motion and its surrounding virtual phonon cloud. Quantum kinetic model calculations fully account for the observed phenomena. (orig.)

  7. Infrared and millimeter waves v.14 millimeter components and techniques, pt.V

    CERN Document Server

    Button, Kenneth J


    Infrared and Millimeter Waves, Volume 14: Millimeter Components and Techniques, Part V is concerned with millimeter-wave guided propagation and integrated circuits. In addition to millimeter-wave planar integrated circuits and subsystems, this book covers transducer configurations and integrated-circuit techniques, antenna arrays, optoelectronic devices, and tunable gyrotrons. Millimeter-wave gallium arsenide (GaAs) IMPATT diodes are also discussed. This monograph is comprised of six chapters and begins with a description of millimeter-wave integrated-circuit transducers, focusing on vario

  8. Multichannel, time-resolved picosecond laser ultrasound imaging and spectroscopy with custom complementary metal-oxide-semiconductor detector. (United States)

    Smith, Richard J; Light, Roger A; Sharples, Steve D; Johnston, Nicholas S; Pitter, Mark C; Somekh, Mike G


    This paper presents a multichannel, time-resolved picosecond laser ultrasound system that uses a custom complementary metal-oxide-semiconductor linear array detector. This novel sensor allows parallel phase-sensitive detection of very low contrast modulated signals with performance in each channel comparable to that of a discrete photodiode and a lock-in amplifier. Application of the instrument is demonstrated by parallelizing spatial measurements to produce two-dimensional thickness maps on a layered sample, and spectroscopic parallelization is demonstrated by presenting the measured Brillouin oscillations from a gallium arsenide wafer. This paper demonstrates the significant advantages of our approach to pump probe systems, especially picosecond ultrasonics.

  9. Novel deep—submicron x—ray lithography process for T—shaped gate patterns

    Institute of Scientific and Technical Information of China (English)

    XieChangqing; YiFuting; 等


    The growing interest in the use of Gallium Arsenids semiconductor materials has presented many opportunities for device operational speed improvements but has also presented many problems for the device maker,A novel deep-submicron x-ray lithography process for T-shaped gate patterns useful for high-electron-mobility transistors(HEMT) is introduced in this work.In the fabrication of T-shaped gate a therr layer resists method is used.The x-ray exposure experiments were finished by Beijing Synchrotron Radiation Facility(BSRF) 3B1A beamline,and good result has been obtained.

  10. Superconductivity by transition metal doping in Ca10(Fe1-xMxAs)10(Pt3As8) (M = Co, Ni, Cu) (United States)

    Stürzer, Tobias; Kessler, Fabian; Johrendt, Dirk


    We report the successful substitution of cobalt, nickel and copper for iron in the 1038-phase parent compound ? yielding ?, ? and ?), respectively. Superconductivity is induced in Co and Ni doped compounds reaching critical temperatures up to 15 K, similar to known Pt substituted ?), whereas no superconductivity was detected in ?. The obtained ? phase diagrams are very similar to those of other iron arsenide superconductors indicating rather universal behaviour despite the more complex structures of the 1038-type compounds, where the physics is primarily determined by the FeAs layer.

  11. Arsenic-bridged magnetic interactions in an emerging two-dimensional FeAs nanostructure on MnAs (United States)

    Helman, Christian; Ferrari, Valeria; Llois, Ana Maria


    The extreme case of an Fe monolayer deposited onto a manganese arsenide (MnAs) substrate is analyzed using density functional theory. We find that an FeAs quasi-two-dimensional antiferromagnetic surface nanostructure emerges. This nanostructure, which is magnetically nearly decoupled from the substrate, is due to bonding effects arising from the arsenic atoms bridging the Fe magnetic interactions. These interactions are studied and modeled using a Heisenberg-type Hamiltonian. They display an angular dependence which is characteristic of superexchange-like interactions, which are of the same order of magnitude as those appearing in Fe-based pnictides.

  12. Acoustical Scanning of Optical Images (United States)


    1976. 6. S. S. Li "Theoretical Analysis of a Novel MPN Gallium Arsenide Schottky Barrier Solar Cell ," Solid State Electronics, 21, 435-438, 1978. 7. R...circuits presented here. inverse frequency dependence Principle of Operat 4on NW 110 RC • = (5) The electrical admittance of the C ( interdigital ...500 V0 (mV) - INTERDIGITAL TRANSDUCER VD (MV)SCHOTTKY DIOE ARRAY Fig. 8. Forward 1-V curves with implant dose as zno parameter. Curve for no implant is

  13. Enhanced optical properties in inclined GaAs nanowire arrays for high-efficiency solar cells (United States)

    Wang, Yile; Zhang, Xu; Sun, Xiaohong; Qi, Yongle; Wang, Zhen; Wang, Hua


    The inclined Gallium Arsenide (GaAs) nanowire arrays (NWAs) as light absorbing structures for solar photovoltaics are proposed. The influence of geometric parameters on the optical absorption properties is systematically investigated, and the optimal geometric parameters of the proposed structure are determined by using rigorous coupled wave analysis (RCWA) and the finite element method. It is found that the absorption efficiency of the optimized structure can be improved significantly compared with vertical NWAs and thin film layer structure. The optimized structure yields a photocurrent of 30.3 mA/cm2, which is much higher than that of vertical NWAs and thin film layer with the same geometric configurations.

  14. Growth and Doping of Al(x)Ga(1-x)N Films by Electron Cyclotron Resonance Assisted Molecular Beam Epitaxy (United States)


    In the case of a well- defined activation energy AEd, the FIG. 4. Temperature dependence of i,, n, and n. carrier concentration in the conduction band...this figure, the ". L Pankove, ModS Symp. Proc. 162, 515 (1990). vertical axis is a parameter S which is defined as the change 2P. .o and D. I. Ferry...Junctions and ence between the metal and GaN. The work function of ise aracas (Plenum New Y ork , e984). ""ha G. X Marcas , Gallium Arsenide Technology

  15. Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation

    CERN Document Server

    Tanta, R; Liao, Z; Krogstrup, P; Vosch, T; Nygard, J; Jespersen, T S


    The thermal gradient along indium-arsenide nanowires was engineered by a combination of fabricated micro- trenches in the supporting substrate and focused laser irradiation. This allowed local control of thermally activated oxidation reactions of the nanowire on the scale of the diffraction limit. The locality of the oxidation was detected by micro-Raman mapping, and the results were found consistent with numerical simulations of the temperature profile. Applying the technique to nanowires in electrical devices the locally oxidized nanowires remained conducting with a lower conductance as expected for an effectively thinner conducting core.

  16. Low-Concentration-Ratio Solar-Cell Arrays (United States)

    Biss, M. S.; Reed, David A., Jr.


    Paper presents design concept for mass-producible arrays of solar electric batteries and concentrators tailored to individual requirements. Arrays intended primarily for space stations needing about 100 kW of power. However, modular, lightweight, compact, and relatively low-cost design also fulfill requirements of some terrestrial applications. Arrays built with currently available materials. Pultrusions, injectionmolded parts, and composite materials used extensively to keep weight low. For added flexibility in design and construction, silicon and gallium arsenide solar-cell panels interchangeable.

  17. GaAs/Ge solar cell AC parameters at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, R. Anil; Suresh, M.S. [ISRO Satellite centre, ISRO, Bangalore 560 017 (India); Nagaraju, J. [Department of Instrumentation, Indian Institute of Science, Bangalore 560 012 (India)


    The AC parameters of Gallium Arsenide (GaAs/Ge) solar cell were measured at different cell temperatures (198-348K) by varying the cell bias voltage (forward and reverse) under dark condition using impedance spectroscopy technique. It was found that the cell capacitance increases with the cell temperature where as the cell resistance decreases, at any bias voltage. The measured cell parameters were used to calculate the intrinsic concentration of electron-hole pair, cell material relative permittivity and its band gap energy. The diode factor and the cell dynamic resistance at the corresponding maximum power point decrease with the cell temperature.

  18. Ab-initio study of the electronic structure of sup 1 sup 9 F implanted in GaAs and GaN crystals

    CERN Document Server

    Park, J H; Cho, H S; Shin, Y N


    We have studied the nuclear quadrupole interaction of a fluorine atom implanted in gallium arsenide and gallium nitride cluster models using the ab-initio Hartree-Fock theory. For the three possible fluorine sites in GaAs and GaN, we have determined the location of the implanted fluorine atom by using a self-consistent calculation, the electric field gradient at the implanted atom, and the electronic structure. Good agreement is found with experimental data wherever they are available. Predictions are made for the implanted fluorine site associated with the total energy and the electric field gradient which are expected to be measurable by a variety of experimental techniques.

  19. Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics. (United States)

    Madéo, Julien; Margiolakis, Athanasios; Zhao, Zhen-Yu; Hale, Peter J; Man, Michael K L; Zhao, Quan-Zhong; Peng, Wei; Shi, Wang-Zhou; Dani, Keshav M


    We report on the first terahertz (THz) emitter based on femtosecond-laser-ablated gallium arsenide (GaAs), demonstrating a 65% enhancement in THz emission at high optical power compared to the nonablated device. Counter-intuitively, the ablated device shows significantly lower photocurrent and carrier mobility. We understand this behavior in terms of n-doping, shorter carrier lifetime, and enhanced photoabsorption arising from the ablation process. Our results show that laser ablation allows for efficient and cost-effective optoelectronic THz devices via the manipulation of fundamental properties of materials.

  20. Molecular beam epitaxy

    CERN Document Server

    Pamplin, Brian R


    Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semicond

  1. Multiple Applications of GaAs semiconductors (United States)

    Martel, Jenrené; Wonka, Willy


    The object of this discussion will be to explore the many facets of Gallium Arsenide(GaAs) semiconductors. The session will begin with a brief overview of the basic properties of semiconductors in general(band gap, doping, charge mobility etc.). It will then follow with a closer look at the properties of GaAs and how these properties could potentially translate into some very exciting applications. Furthermore, current applications of GaAs semiconductors will be dicussed and analyzed. Finally, physical limits and advantages/disadvantages of GaAs will be considered.

  2. Epitaxial growth of single crystal films (United States)

    Lind, M. D.; Kroes, R. L.; Immorlica, A. A., Jr.


    An experiment in gallium arsenide liquid phase epitaxy (LPE) on a flight of the SPAR 6 is described. A general purpose LPE processor suitable for either SPAR or Space Transportation System flights was designed and built. The process was started before the launch, and only the final step, in which the epitaxial film is grown, was performed during the flight. The experiment achieved its objectives; epitaxial films of reasonably good quality and very nearly the thickness predicted for convection free diffusion limited growth were produced. The films were examined by conventional analytical techniques and compared with films grown in normal gravity.

  3. Design considerations and performance characteristics of high concentration point-focussing photovoltaic modules

    Energy Technology Data Exchange (ETDEWEB)

    Sanders, J.A.; Broadbent, S.


    Through the auspices of the Department of Energy, the Fresnel lens point-focussing photovoltaic module has evolved into a commercially available, high efficiency low cost option for converting solar energy into electricity. The 15.4% efficient baseline module is undergoing several design improvements to achieve higher efficiencies at high concentrations and lower cost. A 16.5% module will be available in 1984 and 18% Gallium Arsenide modules in 1985. This paper describes the design details and performance characteristics of the baseline module and the design improvements.

  4. New exploration methods for platinum and rhodium deposits poor in base-metal sulphides

    DEFF Research Database (Denmark)

    Ohnenstetter, M.; Johan, Z.; Cocherie, A.


    Platinum-group elements (PGE) are typically associated with mafic and ultramafic intrusive rocks and the main exploration targets are layers and zones rich in PGE-bearing sulphides. Some PGE occurences, however, are in sulphide-poor situations and this raises the possibility that PGE deposits may...... and weathering has littel effect on the distribution of the PGE.The study showed that alloys and arsenides are the main carriers for platinum in all the deposits. Pt-Fe alloys, in particular, are often present in PGE deposits poor in base-metal sulphides and two phase systems were investigated experimentally: Pt...

  5. Functional and electrophysiological evaluation of the effect of laser therapy in the treatment of peripheral facial paralysis (United States)

    Ladalardo, Thereza C.; Brugnera, Aldo, Jr.; Takamoto, Marcia; Pinheiro, Antonio L. B.; Campos, Roberto A. d. C.; Castanho Garrini, Ana E.; Bologna, Elisangela D.; Settanni, Flavio


    This clinical case report relates to a total of 4 patients, carriers of idiopathic facial paralysis, treated with Low Level Laser Therapy using a Gallium-Aluminum-Arsenide diode laser of 780 nm, 50 mW, continuous wave emission, spot size 3 mm2 and total dosage of 20 joules per session distributed to the peripheral trajectory of the injured nerve in a point by point contact mode. Altogether 24 treatment sessions were performed in a period of 12 consecutive weeks twice a week All treated patients presented recovery signs from the initial degree of paralysis.

  6. Basic Research Plan (United States)


    Dpuy ndr ecetryo Defense ~ ~ (Si c an TehooyP sadPorm) a h otoln fiedsg natedI in Do Ditibto Stte en C, heeyas3uhrzsisrees iitiso Defense~ ~ ~ ~ ofalNT n...arsenide GaN gallium nitride GaSb gallium antimonide Ge germanium GEO geosynchronous earth orbit GHz gigahertz GICR Government/Industry Cooperative... silicon Si3N4 silicon nitride SiC silicon carbide SNR signal-to-noise ratio SPG Scientific Planning Group SRO Strategic Research Objectives STM scanning

  7. Photovoltaics and solar thermal conversion to electricity - Status and prospects (United States)

    Alper, M. E.


    Photovoltaic power system technology development includes flat-plate silicon solar arrays and concentrating solar cell systems, which use silicon and other cell materials such as gallium arsenide. System designs and applications include small remote power systems ranging in size from tens of watts to tens of kilowatts, intermediate load-center applications ranging in size from tens to hundreds of kilowatts, and large central plant installations, as well as grid-connected rooftop applications. The thermal conversion program is concerned with large central power systems and small power applications.

  8. Inherent polarization entanglement generated from a monolithic semiconductor chip

    DEFF Research Database (Denmark)

    Horn, Rolf T.; Kolenderski, Piotr; Kang, Dongpeng


    Creating miniature chip scale implementations of optical quantum information protocols is a dream for many in the quantum optics community. This is largely because of the promise of stability and scalability. Here we present a monolithically integratable chip architecture upon which is built...... a photonic device primitive called a Bragg reflection waveguide (BRW). Implemented in gallium arsenide, we show that, via the process of spontaneous parametric down conversion, the BRW is capable of directly producing polarization entangled photons without additional path difference compensation, spectral...... as a serious contender on which to build large scale implementations of optical quantum processing devices....

  9. Orbital Symmetry of Ba(Fe1-xCox)2As2 Superconductors Probed with X-ray Absorption Spectroscopy


    Cheney, C. Parks; Bondino, F.; Callcott, T. A.; Vilmercati, P.; Ederer, D.; Magnano, E.; Malvestuto, M.; Parmigiani, F.; Sefat, A. S.; McGuire, M. A.; Jin, R; Sales, B. C.; Mandrus, D; Singh, D.J.; Freeland, J. W.


    The orbital symmetries of electron doped iron-arsenide superconductors Ba(Fe1-xCox)2As2 have been measured with x-ray absorption spectroscopy. The data reveal signatures of Fe d electron itinerancy, weak electronic correlations, and a high degree of Fe-As hybridization related to the bonding topology of the Fe dxz+yz states, which are found to contribute substantially at the Fermi level. The energies and detailed orbital character of Fe and As derived unoccupied s and d states are found to be...

  10. Comparative High Field Magneto-transport Of Rare Earth Oxypnictides With Maximum Transition Temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Balakirev, Fedor F [Los Alamos National Laboratory; Migliori, A [MPA-NHMFL; Riggs, S [NHMFL-FSU; Hunte, F [NHMFL-FSU; Gurevich, A [NHMFL-FSU; Larbalestier, D [NHMFL-FSU; Boebinger, G [NHMFL-FSU; Jaroszynski, J [NHMFL-FSU; Ren, Z [CHINA; Lu, W [CHINA; Yang, J [CHINA; Shen, X [CHINA; Dong, X [CHINA; Zhao, Z [CHINA; Jin, R [ORNL; Sefat, A [ORNL; Mcguire, M [ORNL; Sales, B [ORNL; Christen, D [ORNL; Mandrus, D [ORNL


    We compare magnetotransport of the three iron-arsenide-based compounds ReFeAsO (Re=La, Sm, Nd) in very high DC and pulsed magnetic fields up to 45 and 54 T, respectively. Each sample studied exhibits a superconducting transition temperature near the maximum reported to date for that particular compound. While high magnetic fields do not suppress the superconducting state appreciably, the resistivity, Hall coefficient, and critical magnetic fields, taken together, suggest that the phenomenology and superconducting parameters of the oxypnictide superconductors bridges the gap between MgB{sub 2} and YBCO.

  11. Optical Refrigeration (United States)


    glasses and crystals doped with Yb3+ (ZBLANP (refs 16–19), ZBLAN (refs 20,21), CNBZn (refs 22,23), BIG (refs 23,24), KGd(WO4)2 (ref. 22), KY(WO4)2...cooling in the Yb3+-doped fluorozirconate glass ZBLAN . Phys. Rev. B 75, 144302 (2007). 35. Seletskiy, D., Hasselbeck, M. P., Sheik-Bahae, M. & Epstein, R...confined to either glasses and crystals doped with rare-earth (RE) elements or direct-bandgap semiconductors such as gallium arsenide. Although laser

  12. Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching

    DEFF Research Database (Denmark)

    Kallesoe, C.; Mølhave, Kristian; Larsen, K. F.;


    Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V heterostructure nanowires using selective etching can form gaps, sharpening of tips, and thin sections...... lithography is used for deposition of catalyst particles on trench sidewalls and the lateral growth of III-V nanowires is achieved from such catalysts. The selectivity of a bromine-based etch on gallium arsenide segments in gallium phosphide nanowires is examined, using a hydrochloride etch to remove the III...

  13. Terahertz Technology for Defense and Security-Related Applications

    DEFF Research Database (Denmark)

    Iwaszczuk, Krzysztof

    This thesis deals with chosen aspects of terahertz (THz) technology that have potential in defense and security-related applications. A novel method for simultaneous data acquisition in time-resolved THz spectroscopy experiments is developed. This technique is demonstrated by extracting the sheet...... conductivity of photoexcited charge carriers in semi-insulating gallium arsenide. Comparison with results obtained using a standard data acquisition scheme shows that the new method minimizes errors originating from uctuations in the laser system output and timing errors in the THz pulse detection. Furthermore...

  14. Method for the preparation of inorganic single crystal and polycrystalline electronic materials (United States)

    Groves, W. O. (Inventor)


    Large area, semiconductor crystals selected from group 3-5 compounds and alloys are provided for semiconductor device fabrication by the use of a selective etching operation which completely removes the substrate on which the desired crystal was deposited. The substrate, selected from the same group as the single crystal, has a higher solution rate than the epitaxial single crystal which is essentially unaffected by the etching solution. The preparation of gallium phosphide single crystals using a gallium arsenide substrate and a concentrated nitric acid etching solution is described.

  15. The origin of the Avram Iancu U-Ni-Co-Bi-As mineralization, Băiţa (Bihor) metallogenic district, Bihor Mts., Romania (United States)

    Zajzon, Norbert; Szentpéteri, Krisztián; Szakáll, Sándor; Kristály, Ferenc


    The Băiţa metallogenic district in the Bihor Mountains is a historically important mining area in Romania. Uranium mining took place between 1952 and 1998 from various deposits, but very little is known about the geology and mineralogy of these deposits. In this paper, we describe geology and mineralogy of uranium mineralization of the Avram Iancu uranium mine from waste dump samples collected before complete remediation of the site. Texturally and mineralogically complex assemblages of nickeline, cobaltite-gersdorffite solid solution, native Bi, Bi-sulfosalts, molybdenite, and pyrite-chalcopyrite-sphalerite occur with uraninite, "pitchblende," and brannerite in most of the ore samples. The association of nickel, cobalt, and arsenic with uranium is reminiscent of five-element association of vein type U-Ni-Co-Bi-As deposits; however, the Avram Iancu ores appear to be more replacement-type stratiform/stratabound. Avram Iancu ore samples contain multistage complex, skarn, uranium sulfide, arsenide assemblages that can be interpreted to have been formed in the retrograde cooling stages of the skarn hydrothermal system. This mineralizing system may have built-up along Upper Cretaceous-Paleogene "Banatite" intrusions of diorite-to-granite composition. The intrusions crosscut the underlying uraniferous Permian formations in the stacked NW-verging Biharia Nappe System. The mineralization forms stacked, multilayer replacement horizons, along carbonate-rich lithologies within the metavolcanic (tuffaceous) Muncel Series. Mineral paragenesis and some mineral chemistry suggest moderate-to-high uranium sulfide stage along stratigraphically controlled replacement zones and minor veins. Uranium minerals formed abundantly in this early stage and include botryoidal, sooty and euhedral uraninite, brannerite, and coffinite. Later and/or lower-temperature mineral assemblages include heterogeneous, complexly zoned arsenide-sulfarsenide solid solutions associated with minute but

  16. Cameras Reveal Elements in the Short Wave Infrared (United States)


    Goodrich ISR Systems Inc. (formerly Sensors Unlimited Inc.), based out of Princeton, New Jersey, received Small Business Innovation Research (SBIR) contracts from the Jet Propulsion Laboratory, Marshall Space Flight Center, Kennedy Space Center, Goddard Space Flight Center, Ames Research Center, Stennis Space Center, and Langley Research Center to assist in advancing and refining indium gallium arsenide imaging technology. Used on the Lunar Crater Observation and Sensing Satellite (LCROSS) mission in 2009 for imaging the short wave infrared wavelengths, the technology has dozens of applications in military, security and surveillance, machine vision, medical, spectroscopy, semiconductor inspection, instrumentation, thermography, and telecommunications.

  17. Spin-dependent electron-phonon interaction in SmFeAsO by low-temperature Raman spectroscopy. (United States)

    Zhang, L; Guan, P F; Feng, D L; Chen, X H; Xie, S S; Chen, M W


    The interplay between spin dynamics and lattice vibration has been suggested as an important part of the puzzle of high-temperature superconductivity. Here, we report the strong interaction between spin fluctuation and phonon in SmFeAsO, a parent compound of the iron arsenide family of superconductors, revealed by low-temperature Raman spectroscopy. Anomalous zone-boundary-phonon Raman scattering from spin superstructure was observed at temperatures below the antiferromagnetic ordering point, which offers compelling evidence on spin-dependent electron-phonon coupling in pnictides.

  18. Research of MBE Growth and Properties of Semiconductors Hetero-Interfaces with Unusual Band Lineups (United States)


    OF 1 JAN 73,IS OQBQLET.E. .. -9 ,. 񔰣 Research on .p MBE Growth and Properties of Semiconductor Hetero-Interfaces with Unusual Band Lineups...On the other hand, being a phosphide rather than an arsenide, it was widely 3 regarded as a material ill suited for MBE growth . However, we had...extensive experience with the MBE growth of GaP (far more than anybody else) and had found GaP a material far easier to grow than its reputation suggested

  19. Absence of phase-dependent noise in time-domain reflectivity studies of impulsively excited phonons

    KAUST Repository

    Hussain, A.


    There have been several reports of phase-dependent noise in time-domain reflectivity studies of optical phonons excited by femtosecond laser pulses in semiconductors, semimetals, and superconductors. It was suggested that such behavior is associated with the creation of squeezed phonon states although there is no theoretical model that directly supports such a proposal. We have experimentally re-examined the studies of phonons in bismuth and gallium arsenide, and find no evidence of any phase-dependent noise signature associated with the phonons. We place an upper limit on any such noise at least 40–50 dB lower than previously reported.

  20. Quantum mechanical effects analysis of nanostructured solar cell models

    Directory of Open Access Journals (Sweden)

    Badea Andrei


    Full Text Available The quantum mechanical effects resulted from the inclusion of nanostructures, represented by quantum wells and quantum dots, in the i-layer of an intermediate band solar cell will be analyzed. We will discuss the role of these specific nanostructures in the increasing of the solar cells efficiency. InAs quantum wells being placed in the i-layer of a gallium arsenide (GaAs p-i-n cell, we will analyze the quantum confined regions and determine the properties of the eigenstates located therein. Also, we simulate the electroluminescence that occurs due to the nanostructured regions.