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Sample records for ambipolar nanotube field

  1. Polymer-Sorted Semiconducting Carbon Nanotube Networks for High-Performance Ambipolar Field-Effect Transistors

    Science.gov (United States)

    2014-01-01

    Efficient selection of semiconducting single-walled carbon nanotubes (SWNTs) from as-grown nanotube samples is crucial for their application as printable and flexible semiconductors in field-effect transistors (FETs). In this study, we use atactic poly(9-dodecyl-9-methyl-fluorene) (a-PF-1-12), a polyfluorene derivative with asymmetric side-chains, for the selective dispersion of semiconducting SWNTs with large diameters (>1 nm) from plasma torch-grown SWNTs. Lowering the molecular weight of the dispersing polymer leads to a significant improvement of selectivity. Combining dense semiconducting SWNT networks deposited from an enriched SWNT dispersion with a polymer/metal-oxide hybrid dielectric enables transistors with balanced ambipolar, contact resistance-corrected mobilities of up to 50 cm2·V–1·s–1, low ohmic contact resistance, steep subthreshold swings (0.12–0.14 V/dec) and high on/off ratios (106) even for short channel lengths (<10 μm). These FETs operate at low voltages (<3 V) and show almost no current hysteresis. The resulting ambipolar complementary-like inverters exhibit gains up to 61. PMID:25493421

  2. Mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template

    Energy Technology Data Exchange (ETDEWEB)

    Wongsaeng, Chalao [Department of Science, Faculty of Sciences and Agricultural Technology, Rajamangala University of Technology Lanna Tak, Tak 63000 (Thailand); Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Singjai, Pisith, E-mail: pisith.s@cmu.ac.th [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2014-04-07

    Ambipolar field effect transistors based on a single-walled carbon nanotube (SWNT) network formed on a gold nanoparticle (AuNP) template with polyvinyl alcohol as a gate insulator were studied by measuring the current–gate voltage characteristics. It was found that the mobilities of holes and electrons increased with increasing AuNP number density. The disturbances in the flow pattern of the carbon feedstock in the chemical vapor deposition growth that were produced by the AuNP geometry, resulted in the differences in the crystallinity and the diameter, as well as the changes in the degree of the semiconductor behavior of the SWNTs.

  3. Ambipolar phosphorene field effect transistor.

    Science.gov (United States)

    Das, Saptarshi; Demarteau, Marcel; Roelofs, Andreas

    2014-11-25

    In this article, we demonstrate enhanced electron and hole transport in few-layer phosphorene field effect transistors (FETs) using titanium as the source/drain contact electrode and 20 nm SiO2 as the back gate dielectric. The field effect mobility values were extracted to be ∼38 cm(2)/Vs for electrons and ∼172 cm(2)/Vs for the holes. On the basis of our experimental data, we also comprehensively discuss how the contact resistances arising due to the Schottky barriers at the source and the drain end effect the different regime of the device characteristics and ultimately limit the ON state performance. We also propose and implement a novel technique for extracting the transport gap as well as the Schottky barrier height at the metal-phosphorene contact interface from the ambipolar transfer characteristics of the phosphorene FETs. This robust technique is applicable to any ultrathin body semiconductor which demonstrates symmetric ambipolar conduction. Finally, we demonstrate a high gain, high noise margin, chemical doping free, and fully complementary logic inverter based on ambipolar phosphorene FETs.

  4. Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Bongjun; Jang, Seonpil; Dodabalapur, Ananth, E-mail: ananth.dodabalapur@engr.utexas.edu [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Geier, Michael L.; Prabhumirashi, Pradyumna L. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Hersam, Mark C. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States); Department of Medicine, Northwestern University, Evanston, Illinois 60208 (United States)

    2014-02-10

    We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm{sup 2} V{sup −1} s{sup −1} at low operating voltages (<5 V) in air. We further show that the SWCNT-ZTO hybrid ambipolar FETs can be integrated into functional inverter circuits that display high peak gain (>10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures.

  5. Inkjet printed ambipolar transistors and inverters based on carbon nanotube/zinc tin oxide heterostructures

    International Nuclear Information System (INIS)

    Kim, Bongjun; Jang, Seonpil; Dodabalapur, Ananth; Geier, Michael L.; Prabhumirashi, Pradyumna L.; Hersam, Mark C.

    2014-01-01

    We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm 2 V −1 s −1 at low operating voltages ( 10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures

  6. Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors

    Energy Technology Data Exchange (ETDEWEB)

    Aïssa, B., E-mail: aissab@emt.inrs.ca [Qatar Environment and Energy Research Institute (QEERI), Qatar Foundation, P.O. Box 5825, Doha (Qatar); Centre Energie, Matériaux et Télécommunications, INRS, 1650, Boulevard Lionel-Boulet Varennes, Quebec J3X 1S2 (Canada); Nedil, M. [Telebec Wireless Underground Communication Laboratory, UQAT, 675, 1ère Avenue, Val d' Or, Quebec J9P 1Y3 (Canada); Kroeger, J. [NanoIntegris & Raymor Nanotech, Raymor Industries Inc., 3765 La Vérendrye, Boisbriand, Quebec J7H 1R8 (Canada); Haddad, T. [Department of Mechanical Engineering, McGill University, Montreal, Quebec H3A 0B8 (Canada); Rosei, F. [Centre Energie, Matériaux et Télécommunications, INRS, 1650, Boulevard Lionel-Boulet Varennes, Quebec J3X 1S2 (Canada)

    2015-09-28

    We report the memory operation behavior of a light illumination ambipolar single-walled carbon nanotube thin film field-effect transistors devices. In addition to the high electronic-performance, such an on/off transistor-switching ratio of 10{sup 4} and an on-conductance of 18 μS, these memory devices have shown a high retention time of both hole and electron-trapping modes, reaching 2.8 × 10{sup 4} s at room temperature. The memory characteristics confirm that light illumination and electrical field can act as an independent programming/erasing operation method. This could be a fundamental step toward achieving high performance and stable operating nanoelectronic memory devices.

  7. Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors

    International Nuclear Information System (INIS)

    Aïssa, B.; Nedil, M.; Kroeger, J.; Haddad, T.; Rosei, F.

    2015-01-01

    We report the memory operation behavior of a light illumination ambipolar single-walled carbon nanotube thin film field-effect transistors devices. In addition to the high electronic-performance, such an on/off transistor-switching ratio of 10 4 and an on-conductance of 18 μS, these memory devices have shown a high retention time of both hole and electron-trapping modes, reaching 2.8 × 10 4  s at room temperature. The memory characteristics confirm that light illumination and electrical field can act as an independent programming/erasing operation method. This could be a fundamental step toward achieving high performance and stable operating nanoelectronic memory devices

  8. Bimolecular recombination in ambipolar organic field effect transistors

    NARCIS (Netherlands)

    Charrier, D.S.H.; Vries, T. de; Mathijssen, S.G.J.; Geluk, E.-J.; Smits, E.C.P.; Kemerink, M.; Janssen, R.A.J.

    2009-01-01

    In ambipolar organic field effect transistors (OFET) the shape of the channel potential is intimately related to the recombination zone width W, and hence to the electron–hole recombination strength. Experimentally, the recombination profile can be assessed by scanning Kelvin probe microscopy

  9. Bimolecular recombination in ambipolar organic field effect transistors

    NARCIS (Netherlands)

    Charrier, D. S. H.; de Vries, T.; Mathijssen, S. G. J.; Geluk, E. -J.; Smits, E. C. P.; Kemerink, M.; Janssen, R. A. J.

    In ambipolar organic field effect transistors (OFET) the shape of the channel potential is intimately related to the recombination zone width W, and hence to the electron-hole recombination strength. Experimentally, the recombination profile can be assessed by scanning Kelvin probe microscopy

  10. Ambipolar charge transport in organic field-effect transistors

    NARCIS (Netherlands)

    Smits, E.C.P.; Anthopoulos, T.D.; Setayesh, S.; Veenendaal, van E.; Coehoorn, R.; Blom, P.W.M.; Boer, de B.; Leeuw, de D.M.

    2006-01-01

    A model describing charge transport in disordered ambipolar organic field-effect transistors is presented. The basis of this model is the variable-range hopping in an exponential density of states developed for disordered unipolar organic transistors. We show that the model can be used to calculate

  11. Balanced Ambipolar Organic Field-Effect Transistors by Polymer Preaggregation.

    Science.gov (United States)

    Janasz, Lukasz; Luczak, Adam; Marszalek, Tomasz; Dupont, Bertrand G R; Jung, Jaroslaw; Ulanski, Jacek; Pisula, Wojciech

    2017-06-21

    Ambipolar organic field-effect transistors (OFETs) based on heterojunction active films still suffer from an imbalance in the transport of electrons and holes. This problem is related to an uncontrolled phase separation between the donor and acceptor organic semiconductors in the thin films. In this work, we have developed a concept to improve the phase separation in heterojunction transistors to enhance their ambipolar performance. This concept is based on preaggregation of the donor polymer, in this case poly(3-hexylthiophene) (P3HT), before solution mixing with the small-molecular-weight acceptor, phenyl-C61-butyric acid methyl ester (PCBM). The resulting heterojunction transistor morphology consists of self-assembled P3HT fibers embedded in a PCBM matrix, ensuring balanced mobilities reaching 0.01 cm 2 /V s for both holes and electrons. These are the highest mobility values reported so far for ambipolar OFETs based on P3HT/PCBM blends. Preaggregation of the conjugated polymer before fabricating binary blends can be regarded as a general concept for a wider range of semiconducting systems applicable in organic electronic devices.

  12. Spin-valley dynamics of electrically driven ambipolar carbon-nanotube quantum dots

    Science.gov (United States)

    Osika, E. N.; Chacón, A.; Lewenstein, M.; Szafran, B.

    2017-07-01

    An ambipolar n-p double quantum dot defined by potential variation along a semiconducting carbon-nanotube is considered. We focus on the (1e,1h) charge configuration with a single excess electron of the conduction band confined in the n-type dot and a single missing electron in the valence band state of the p-type dot for which lifting of the Pauli blockade of the current was observed in the electric-dipole spin resonance (Laird et al 2013 Nat. Nanotechnol. 8 565). The dynamics of the system driven by periodic electric field is studied with the Floquet theory and the time-dependent configuration interaction method with the single-electron spin-valley-orbitals determined for atomistic tight-binding Hamiltonian. We find that the transitions lifting the Pauli blockade are strongly influenced by coupling to a vacuum state with an empty n dot and a fully filled p dot. The coupling shifts the transition energies and strongly modifies the effective g factors for axial magnetic field. The coupling is modulated by the bias between the dots but it appears effective for surprisingly large energy splitting between the (1e,1h) ground state and the vacuum (0e, 0h) state. Multiphoton transitions and high harmonic generation effects are also discussed.

  13. Enhancement of ambipolar characteristics in single-walled carbon nanotubes using C{sub 60} and fabrication of logic gates

    Energy Technology Data Exchange (ETDEWEB)

    Park, Steve [Department of Materials Science and Engineering, Stanford University, Durand Building, 496 Lomita Mall, Stanford, California 94305-4034 (United States); Nam, Ji Hyun [Department of Electrical Engineering, Stanford University, David Packard Building, 350 Serra Mall, Mail Code: 9505, Stanford, California 94305-9505 (United States); Koo, Ja Hoon; Lei, Ting; Bao, Zhenan, E-mail: zbao@stanford.edu [Department of Chemical Engineering, Stanford University, Shriram Center, 443 Via Ortega, Room 307, Stanford, California 94305-4145 (United States)

    2015-03-09

    We demonstrate a technique to convert p-type single-walled carbon nanotube (SWNT) network transistor into ambipolar transistor by thermally evaporating C{sub 60} on top. The addition of C{sub 60} was observed to have two effects in enhancing ambipolar characteristics. First, C{sub 60} served as an encapsulating layer that enhanced the ambipolar characteristics of SWNTs. Second, C{sub 60} itself served as an electron transporting layer that contributed to the n-type conduction. Such a dual effect enables effective conversion of p-type into ambipolar characteristics. We have fabricated inverters using our SWNT/C{sub 60} ambipolar transistors with gain as high as 24, along with adaptive NAND and NOR logic gates.

  14. Reduction of ambipolar characteristics of vertical channel tunneling field-effect transistor by using dielectric sidewall

    International Nuclear Information System (INIS)

    Park, Chun Woong; Cho, Il Hwan; Choi, Woo Young; Lee, Jong-Ho

    2013-01-01

    Ambipolar characteristics of tunneling FETs have been improved by introducing a novel structure which contains dielectric sidewall in the gate region. In the ambipolar operation mode, gate field effect on intrinsic-drain junction region can be reduced with dielectric sidewall. As a result, ambipolar state tunneling probability is decreased at the intrinsic-drain junction. Since the sidewall region is located near the drain region, tunneling probability of source-intrinsic region is not affected by dielectric sidewall. This asymmetric characteristics means only ambipolar current of tunneling FETs can be prohibited by dielectric sidewall. Reduction of ambipolar characteristic of proposed structure has been evaluated with dimension and location of dielectric sidewall. Quantitative analysis of ambipolar characteristics is also investigated with tunneling. (paper)

  15. Titanyl phthalocyanine ambipolar thin film transistors making use of carbon nanotube electrodes

    Science.gov (United States)

    Coppedè, Nicola; Valitova, Irina; Mahvash, Farzaneh; Tarabella, Giuseppe; Ranzieri, Paolo; Iannotta, Salvatore; Santato, Clara; Martel, Richard; Cicoira, Fabio

    2014-12-01

    The capability of efficiently injecting charge carriers into organic films and finely tuning their morphology and structure is crucial to improve the performance of organic thin film transistors (OTFTs). In this work, we investigate OTFTs employing carbon nanotubes (CNTs) as the source-drain electrodes and, as the organic semiconductor, thin films of titanyl phthalocyanine (TiOPc) grown by supersonic molecular beam deposition (SuMBD). While CNT electrodes have shown an unprecedented ability to improve charge injection in OTFTs, SuMBD is an effective technique to tune film morphology and structure. Varying the substrate temperature during deposition, we were able to grow both amorphous (low substrate temperature) and polycrystalline (high substrate temperature) films of TiOPc. Regardless of the film morphology and structure, CNT electrodes led to superior charge injection and transport performance with respect to benchmark Au electrodes. Vacuum annealing of polycrystalline TiOPc films with CNT electrodes yielded ambipolar OTFTs.

  16. Titanyl phthalocyanine ambipolar thin film transistors making use of carbon nanotube electrodes

    International Nuclear Information System (INIS)

    Coppedè, Nicola; Tarabella, Giuseppe; Ranzieri, Paolo; Iannotta, Salvatore; Valitova, Irina; Cicoira, Fabio; Mahvash, Farzaneh; Santato, Clara; Martel, Richard

    2014-01-01

    The capability of efficiently injecting charge carriers into organic films and finely tuning their morphology and structure is crucial to improve the performance of organic thin film transistors (OTFTs). In this work, we investigate OTFTs employing carbon nanotubes (CNTs) as the source-drain electrodes and, as the organic semiconductor, thin films of titanyl phthalocyanine (TiOPc) grown by supersonic molecular beam deposition (SuMBD). While CNT electrodes have shown an unprecedented ability to improve charge injection in OTFTs, SuMBD is an effective technique to tune film morphology and structure. Varying the substrate temperature during deposition, we were able to grow both amorphous (low substrate temperature) and polycrystalline (high substrate temperature) films of TiOPc. Regardless of the film morphology and structure, CNT electrodes led to superior charge injection and transport performance with respect to benchmark Au electrodes. Vacuum annealing of polycrystalline TiOPc films with CNT electrodes yielded ambipolar OTFTs. (paper)

  17. Ambipolar diffusion regulated collapse of filaments threaded by perpendicular magnetic fields

    Science.gov (United States)

    Burge, C. A.; Van Loo, S.; Falle, S. A. E. G.; Hartquist, T. W.

    2016-11-01

    Context. In giant molecular clouds (GMCs), the fractional ionisation is low enough that the neutral and charged particles are weakly coupled. A consequence of this is that the magnetic flux redistributes within the cloud, allowing an initially magnetically supported region to collapse. Aims: We aim to elucidate the effects of ambipolar diffusion on the evolution of infinitely long filaments and the effect of decaying turbulence on that evolution. Methods: First, in ideal magnetohydrodynamics (MHD), a two-dimensional cylinder of an isothermal magnetised plasma with initially uniform density was allowed to evolve to an equilibrium state. Then, the response of the filament to ambipolar diffusion was followed using an adaptive mesh refinement multifluid MHD code. Various ambipolar resistivities were chosen to reflect different ratios of Jeans length to ambipolar diffusion length scale. To study the effect of turbulence on the ambipolar diffusion rate, we perturbed the equilibrium filament with a turbulent velocity field quantified by a rms sonic Mach number, Mrms, of 10, 3 or 1. Results: We numerically reproduce the density profiles for filaments that are in magnetohydrostatic and pressure equilibrium with their surroundings obtained in a published model and show that these equilibria are dynamically stable. If the effect of ambipolar diffusion is considered, these filaments lose magnetic support initiating cloud collapse. The filaments do not lose magnetic flux. Rather the magnetic flux is redistributed within the filament from the dense centre towards the diffuse envelope. The rate of the collapse is inversely proportional to the fractional ionisation and two gravitationally-driven ambipolar diffusion regimes for the collapse are observed as predicted in a published model. For high values of the ionisation coefficient, that is X ≥ 10-7, the gas is strongly coupled to the magnetic field and the Jeans length is larger than the ambipolar diffusion length scale. Then

  18. Azimuthal electric fields and ambipolarity in a multiple-helicity torsatron

    International Nuclear Information System (INIS)

    Hastings, D.E.; Shaing, K.C.

    1985-01-01

    In a torsatron there are multiple solutions to the ambipolarity relationship for the electric field. If the electric field is small over some region of space then the self-consistent poloidal electric field can be important and lead to potential islands. If the plasma is in the superbanana plateau regime, then slow resonant particles limit the rate of change of the electric field and, hence, give a minimum width for the spatial zone where the plasma is changing roots of the ambipolarity relationship

  19. Ambipolar Cu- and Fe-phthalocyanine single-crystal field-effect transistors

    NARCIS (Netherlands)

    De Boer, R.W.I.; Stassen, A.F.; Craciun, M.F.; Mulder, C.L.; Molinari, A.; Rogge, S.; Morpurgo, A.F.

    2005-01-01

    We report the observation of ambipolar transport in field-effect transistors fabricated on single crystals of copper- and iron-phthalocyanine, using gold as a high work-function metal for the fabrication of source and drain electrodes. In these devices, the room-temperature mobility of holes reaches

  20. Charge injection engineering of ambipolar field-effect transistors for high-performance organic complementary circuits.

    Science.gov (United States)

    Baeg, Kang-Jun; Kim, Juhwan; Khim, Dongyoon; Caironi, Mario; Kim, Dong-Yu; You, In-Kyu; Quinn, Jordan R; Facchetti, Antonio; Noh, Yong-Young

    2011-08-01

    Ambipolar π-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementary logics based on unipolar p- and n-channel organic field-effect transistors (OFETs). Here, we demonstrate a simple methodology to control charge injection and transport in ambipolar OFETs via engineering of the electrical contacts. Solution-processed caesium (Cs) salts, as electron-injection and hole-blocking layers at the interface between semiconductors and charge injection electrodes, significantly decrease the gold (Au) work function (∼4.1 eV) compared to that of a pristine Au electrode (∼4.7 eV). By controlling the electrode surface chemistry, excellent p-channel (hole mobility ∼0.1-0.6 cm(2)/(Vs)) and n-channel (electron mobility ∼0.1-0.3 cm(2)/(Vs)) OFET characteristics with the same semiconductor are demonstrated. Most importantly, in these OFETs the counterpart charge carrier currents are highly suppressed for depletion mode operation (I(off) 0.1-0.2 mA). Thus, high-performance, truly complementary inverters (high gain >50 and high noise margin >75% of ideal value) and ring oscillators (oscillation frequency ∼12 kHz) based on a solution-processed ambipolar polymer are demonstrated.

  1. Solution-Processable Balanced Ambipolar Field-Effect Transistors Based on Carbonyl-Regulated Copolymers.

    Science.gov (United States)

    Yang, Chengdong; Fang, Renren; Yang, Xiongfa; Chen, Ru; Gao, Jianhua; Fan, Hanghong; Li, Hongxiang; Hu, Wenping

    2018-04-04

    It is very important to develop ambipolar field effect transistors to construct complementary circuits. To obtain balanced hole- and electron-transport properties, one of the key issues is to regulate the energy levels of the frontier orbitals of the semiconductor materials by structural tailoring, so that they match well with the electrode Fermi levels. Five conjugated copolymers were synthesized and exhibited low LUMO energy levels and narrow bandgaps on account of the strong electron-withdrawing effect of the carbonyl groups. Polymer thin film transistors were prepared by using a solution method and exhibited high and balanced hole and electron mobility of up to 0.46 cm 2  V -1  s -1 , which suggested that these copolymers are promising ambipolar semiconductor materials. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Kinetic transport properties of a bumpy torus with finite radial ambipolar field

    International Nuclear Information System (INIS)

    Spong, D.A.; Harris, E.G.; Hedrick, C.L.

    1978-04-01

    Bumpy torus neoclassical transport coefficients have been calculted including finite values of the radial ambipolar field. These are obtained by solving a bounce-averaged drift kinetic equation in a local approximation for perturbations in the distribution function (away from a stationary Maxwellian) caused by toroidicity and radial gradients in plasma density, temperature, and potential. Particle and energy fluxes along with the associated transport coefficients are then calculated by taking appropriate moments of the distribution function. Particle orbits are treated by breaking them up into a vertical drift component (due to toroidicity) and a theta precessional drift (as a result of Vector E x Vector B and drifts due to the bumpy toroidal field). The kinetic equation has been solved using both a functional expansion method and finite difference techniques [Alternating-Direction-Implicit (ADI)]. The resulting transport coefficients exhibit a strong dependence on the ambipolar electric field and plasma collisionality. In the large electric field limit, our results are in close agreement with the earlier work of Kovrizhnykh

  3. Optimization of L-shaped tunneling field-effect transistor for ambipolar current suppression and Analog/RF performance enhancement

    Science.gov (United States)

    Li, Cong; Zhao, Xiaolong; Zhuang, Yiqi; Yan, Zhirui; Guo, Jiaming; Han, Ru

    2018-03-01

    L-shaped tunneling field-effect transistor (LTFET) has larger tunnel area than planar TFET, which leads to enhanced on-current ION . However, LTFET suffers from severe ambipolar behavior, which needs to be further optimized for low power and high-frequency applications. In this paper, both hetero-gate-dielectric (HGD) and lightly doped drain (LDD) structures are introduced into LTFET for suppression of ambipolarity and improvement of analog/RF performance of LTFET. Current-voltage characteristics, the variation of energy band diagrams, distribution of band-to-band tunneling (BTBT) generation and distribution of electric field are analyzed for our proposed HGD-LDD-LTFET. In addition, the effect of LDD on the ambipolar behavior of LTFET is investigated, the length and doping concentration of LDD is also optimized for better suppression of ambipolar current. Finally, analog/RF performance of HGD-LDD-LTFET are studied in terms of gate-source capacitance, gate-drain capacitance, cut-off frequency, and gain bandwidth production. TCAD simulation results show that HGD-LDD-LTFET not only drastically suppresses ambipolar current but also improves analog/RF performance compared with conventional LTFET.

  4. Ambipolar transport of silver nanoparticles decorated graphene oxide field effect transistors

    Science.gov (United States)

    Sarkar, Kalyan Jyoti; Sarkar, K.; Pal, B.; Kumar, Aparabal; Das, Anish; Banerji, P.

    2018-05-01

    In this article, we report ambipolar field effect transistor (FET) by using graphene oxide (GO) as a gate dielectric material for silver nanoparticles (AgNPs) decorated GO channel layer. GO was synthesized by Hummers' method. The AgNPs were prepared via photochemical reduction of silver nitrate solution by using monoethanolamine as a reducing agent. Morphological properties of channel layer were characterized by Field Effect Scanning Electron Microscopy (FESEM). Fourier Transform Infrared Spectroscopy (FTIR) was carried out to characterize GO thin film. For device fabrication gold (Au) was deposited as source-drain contact and aluminum (Al) was taken as bottom contact. Electrical measurements were performed by back gate configuration. Ambipolar transport behavior was explained from transfer characteristics. A maximum electron mobiliy of 6.65 cm2/Vs and a hole mobility of 2.46 cm2/Vs were extracted from the transfer characteristics. These results suggest that GO is a potential candidate as a gate dielectric material for thin film transistor applications and also provides new insights in GO based research.

  5. Ambipolar Electric Field, Photoelectrons, and Their Role in Atmospheric Escape From Hot Jupiters

    Science.gov (United States)

    Cohen, O.; Glocer, A.

    2012-01-01

    Atmospheric mass loss from Hot Jupiters can be large due to the close proximity of these planets to their host star and the strong radiation the planetary atmosphere receives. On Earth, a major contribution to the acceleration of atmospheric ions comes from the vertical separation of ions and electrons, and the generation of the ambipolar electric field. This process, known as the "polar wind," is responsible for the transport of ionospheric constituents to Earth's magnetosphere, where they are well observed. The polar wind can also be enhanced by a relatively small fraction of super-thermal electrons (photoelectrons) generated by photoionization.We formulate a simplified calculation of the effect of the ambipolar electric field and the photoelectrons on the ion scale height in a generalized manner. We find that the ion scale height can be increased by a factor of 2-15 due to the polar wind effects. We also estimate a lower limit of an order of magnitude increase of the ion density and the atmospheric mass-loss rate when polar wind effects are included.

  6. Ambipolar Small-Molecule:Polymer Blend Semiconductors for Solution-Processable Organic Field-Effect Transistors.

    Science.gov (United States)

    Kang, Minji; Hwang, Hansu; Park, Won-Tae; Khim, Dongyoon; Yeo, Jun-Seok; Kim, Yunseul; Kim, Yeon-Ju; Noh, Yong-Young; Kim, Dong-Yu

    2017-01-25

    We report on the fabrication of an organic thin-film semiconductor formed using a blend solution of soluble ambipolar small molecules and an insulating polymer binder that exhibits vertical phase separation and uniform film formation. The semiconductor thin films are produced in a single step from a mixture containing a small molecular semiconductor, namely, quinoidal biselenophene (QBS), and a binder polymer, namely, poly(2-vinylnaphthalene) (PVN). Organic field-effect transistors (OFETs) based on QBS/PVN blend semiconductor are then assembled using top-gate/bottom-contact device configuration, which achieve almost four times higher mobility than the neat QBS semiconductor. Depth profile via secondary ion mass spectrometry and atomic force microscopy images indicate that the QBS domains in the films made from the blend are evenly distributed with a smooth morphology at the bottom of the PVN layer. Bias stress test and variable-temperature measurements on QBS-based OFETs reveal that the QBS/PVN blend semiconductor remarkably reduces the number of trap sites at the gate dielectric/semiconductor interface and the activation energy in the transistor channel. This work provides a one-step solution processing technique, which makes use of soluble ambipolar small molecules to form a thin-film semiconductor for application in high-performance OFETs.

  7. Ambipolar electric fields and turbulence studies in the Wisconsin levitated toroidal octupole

    International Nuclear Information System (INIS)

    Armentrout, C.J.

    1977-01-01

    Detailed studies of hot ion plasmas (T/sub i/ > T/sub e/) in the poloidal field octupole show that the ambipolar electric field which is perpendicular to the flux surfaces is well explained by the observed properties of the microturbulence structures in the plasma. The turbulence structure has been measured by correlation techniques which are carefully described. In these experiments, signals were studied which are aperiodic in time and space, short lived compared to the decay times of the bulk plasma parameters, short ranged compared to the machine size, and are therefore classified as microturbulence structures. The resulting spatial and temporal correlation functions (CFs) are well fitted to a Gaussian function and the associated correlation lengths or times are the half width at half maximum of the CFs. The correlation length is measured to be the ion gyro radius for the hot hydrogen plasma and somewhat less for the helium plasma

  8. Calculation of the poloidal ambipolar field in a stellarator and its effect on transport

    International Nuclear Information System (INIS)

    Mynick, H.E.

    1984-01-01

    The portion Phi 1 of the ambipolar potential Phi which produces an electric field in the flux surfaces of a stellarator is self-consistently calculated, and its effect on stellarator transport at low collisionality is considered. The effect is small in a parameter delta/sub h/, which is proportional to the square root of the ripple amplitude, epsilon/sub h/. However, since delta/sub h/ can be an appreciable fraction of 1 for realistic parameters, the effect of Phi 1 on transport can also be appreciable. Whether the effect is harmful or beneficial to confinement depends on the degree of pressure anisotropy and on the sign of p/sub perpendicular/-p/sub parallel/

  9. Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi; Wang, Qingxiao; Yue, Weisheng; Guo, Zaibing; LI, LIANG; Zhao, Chao; Wang, Xianbin; Abutaha, Anas I.; Alshareef, Husam N.; Zhang, Yafei; Zhang, Xixiang

    2014-01-01

    Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations. This journal is © the Partner Organisations 2014.

  10. Outlook and emerging semiconducting materials for ambipolar transistors.

    Science.gov (United States)

    Bisri, Satria Zulkarnaen; Piliego, Claudia; Gao, Jia; Loi, Maria Antonietta

    2014-02-26

    Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great interest in exotic semiconductors, such as organic semiconductors, nanostructured materials, and carbon nanotubes. The ability to utilize both holes and electrons inside one device opens new possibilities for the development of more compact complementary metal-oxide semiconductor (CMOS) circuits, and new kinds of optoelectronic device, namely, ambipolar light-emitting transistors. This progress report highlights the recent progresses in the field of ambipolar transistors, both from the fundamental physics and application viewpoints. Attention is devoted to the challenges that should be faced for the realization of ambipolar transistors with different material systems, beginning with the understanding of the importance of interface modification, which heavily affects injections and trapping of both holes and electrons. The recent development of advanced gating applications, including ionic liquid gating, that open up more possibility to realize ambipolar transport in materials in which one type of charge carrier is highly dominant is highlighted. Between the possible applications of ambipolar field-effect transistors, we focus on ambipolar light-emitting transistors. We put this new device in the framework of its prospective for general lightings, embedded displays, current-driven laser, as well as for photonics-electronics interconnection. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Enhanced O2 Loss at Mars Due to an Ambipolar Electric Field from Electron Heating

    Science.gov (United States)

    Ergun, R. E.; Andersson, L. A.; Fowler, C. M.; Woodson, A. K.; Weber, T. D.; Delory, G. T.; Andrews, D. J.; Eriksson, A. I.; Mcenulty, T.; Morooka, M. W.; hide

    2016-01-01

    Recent results from the MAVEN Langmuir Probe and Waves (LPW) instrument suggest higher than predicted electron temperatures (T sub e) in Mars dayside ionosphere above approx. 180 km in altitude. Correspondingly, measurements from Neutral Gas and Ion Mass Spectrometer (NGIMS) indicate significant abundances of O2+ up to approx. 500 km in altitude, suggesting that O2+ may be a principal ion loss mechanism of oxygen. In this article, we investigate the effects of the higher T(sub e) (which results from electron heating) and ion heating on ion outflow and loss. Numerical solutions show that plasma processes including ion heating and higher T(sub e) may greatly increase O2+ loss at Mars. In particular, enhanced T(sub e) in Mars ionosphere just above the exobase creates a substantial ambipolar electric field with a potential (e) of several k(sub b)T(sub e), which draws ions out of the region allowing for enhanced escape. With active solar wind, electron and ion heating, direct O2+ loss could match or exceed loss via dissociative recombination of O2+. These results suggest that direct loss of O2+ may have played a significant role in the loss of oxygen at Mars over time.

  12. Electrical responses by effects of molecular adsorption on channel and junctions of carbon nanotube field effect transistors

    International Nuclear Information System (INIS)

    Kang, Donghun; Park, Wanjun

    2008-01-01

    We report the adsorption effect on the electrical transport of nanotube field effect transistors. The source-drain current is monitored separately for the nanotube channel and the metal-nanotube junction under different pressures of ambient air with a blocking passivation. The metal-nanotube junction shows a significant change from p-type to ambipolar upon vacuum pumping, while the nanotube channel changes modestly. The metal-nanotube junction is found to be far more sensitive to the environment than the nanotube channel. We suggest that the adsorption states underneath the blocking layer do not desorb, and thus the positive carriers would not be diluted upon the vacuum pumping. This result is interpreted as the formation of an i-p-i and p-i-p junction with charge transfer by oxygen molecules. (fast track communication)

  13. MoS2 /Rubrene van der Waals Heterostructure: Toward Ambipolar Field-Effect Transistors and Inverter Circuits.

    Science.gov (United States)

    He, Xuexia; Chow, WaiLeong; Liu, Fucai; Tay, BengKang; Liu, Zheng

    2017-01-01

    2D transition metal dichalcogenides are promising channel materials for the next-generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS 2 ) few layers and organic crystal - 5,6,11,12-tetraphenylnaphthacene (rubrene). In this work, ambipolar field-effect transistors are successfully achieved based on MoS 2 and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm 2 V -1 s -1 , respectively. The ambipolar behavior is explained based on the band alignment of MoS 2 and rubrene. Furthermore, being a building block, the MoS 2 /rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of -26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon

    KAUST Repository

    Li, Jingqi; Yue, Weisheng; Guo, Zaibing; Yang, Yang; Wang, Xianbin; Syed, Ahad A.; Zhang, Yafei

    2014-01-01

    A vertical carbon nanotube field-effect transistor (CNTFET) based on silicon (Si) substrate has been proposed and simulated using a semi-classical theory. A single-walled carbon nanotube (SWNT) and an n-type Si nanowire in series construct the channel of the transistor. The CNTFET presents ambipolar characteristics at positive drain voltage (Vd) and n-type characteristics at negative Vd. The current is significantly influenced by the doping level of n-Si and the SWNT band gap. The n-branch current of the ambipolar characteristics increases with increasing doping level of the n-Si while the p-branch current decreases. The SWNT band gap has the same influence on the p-branch current at a positive Vd and n-type characteristics at negative Vd. The lower the SWNT band gap, the higher the current. However, it has no impact on the n-branch current in the ambipolar characteristics. Thick oxide is found to significantly degrade the current and the subthreshold slope of the CNTFETs.

  15. Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon

    KAUST Repository

    Li, Jingqi

    2014-07-01

    A vertical carbon nanotube field-effect transistor (CNTFET) based on silicon (Si) substrate has been proposed and simulated using a semi-classical theory. A single-walled carbon nanotube (SWNT) and an n-type Si nanowire in series construct the channel of the transistor. The CNTFET presents ambipolar characteristics at positive drain voltage (Vd) and n-type characteristics at negative Vd. The current is significantly influenced by the doping level of n-Si and the SWNT band gap. The n-branch current of the ambipolar characteristics increases with increasing doping level of the n-Si while the p-branch current decreases. The SWNT band gap has the same influence on the p-branch current at a positive Vd and n-type characteristics at negative Vd. The lower the SWNT band gap, the higher the current. However, it has no impact on the n-branch current in the ambipolar characteristics. Thick oxide is found to significantly degrade the current and the subthreshold slope of the CNTFETs.

  16. A phenomenological model for cross-field plasma transport in non-ambipolar scrape-off layers

    International Nuclear Information System (INIS)

    LaBombard, B.; Grossman, A.A.; Conn, R.W.

    1990-01-01

    A simplified two-fluid transport model which includes phenomenological coefficients of particle diffusion, mobility, and thermal diffusivity is used to investigate the effects of nonambipolar particle transport on scrape-off layer (SOL) plasma profiles. A computer code (BSOLRAD3) has been written to iteratively solve for 2-D cross-field density, potential, and electron temperature profiles for arbitrary boundary conditions, including segments of 'limiters' that are electrically conducting or non-conducting. Numerical results are presented for two test cases: (1) a 1-D slab geometry showing the interdependency of the density, potential, and temperature gradient scale lengths on particle diffusion, mobility, and thermal diffusivity coefficients and limiter bias conditions, and (2) a 2-D geometry illustrating ExB plasma flow effects. It is shown that the SOL profiles can be quite sensitive to non-ambipolarity conditions imposed by the limiter and, in particular, whether the limiter surfaces are biased. Such effects, if overlooked in SOL transport analysis, can lead to erroreous conclusions about the magnitude of the local ambipolar diffusion coefficient. (orig.)

  17. High Performance Ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene Copolymer Field-Effect Transistors with Balanced Hole and Electron Mobilities

    DEFF Research Database (Denmark)

    Chen, Zhuoying; Lee, Mi Jung; Ashraf, Raja Shahid

    2012-01-01

    Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm2 V−1 s−1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance...

  18. Ambipolar field-effect transistors by few-layer InSe with asymmetry contact metals

    Directory of Open Access Journals (Sweden)

    Chang-Yu Lin

    2017-07-01

    Full Text Available Group IIIA−VIA layered semiconductors (MX, where M = Ga and In, X = S, Se, and Te have attracted tremendous interest for their anisotropic optical, electronic, and mechanical properties. In this study, we demonstrated that metal and InSe junctions can lead to carrier behaviors in few-layered InSe FETs. These results indicate that the polarity of few-layered InSe FETs can be determined by using metals with different work functions. We adopted FET S/D metal contacts with asymmetric work functions to reduce the Schottky barriers of electrons and holes, and discovered that few-layered InSe FETs with carefully selected metal contacts can achieve ambipolar behaviors. These results indicate that group IIIA−VIA layered semiconductor FETs with asymmetry contact metals have great potential for applications in photovoltaic devices, optical sensors, and CMOS inverter circuits.

  19. Influence of gate dielectric on the ambipolar characteristics of solution-processed organic field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Ribierre, J C; Ghosh, S; Takaishi, K; Muto, T; Aoyama, T, E-mail: jcribierre@ewha.ac.kr, E-mail: taoyama@riken.jp [Advanced Science Institute, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan)

    2011-05-25

    Solution-processed ambipolar organic field-effect transistors based on dicyanomethylene-substituted quinoidal quaterthiophene derivative [QQT(CN)4] are fabricated using various gate dielectric materials including cross-linked polyimide and poly-4-vinylphenol. Devices with spin-coated polymeric gate dielectric layers show a reduced hysteresis in their transfer characteristics. Among the insulating polymers examined in this study, a new fluorinated polymer with a low dielectric constant of 2.8 significantly improves both hole and electron field-effect mobilities of QQT(CN)4 thin films to values as high as 0.04 and 0.002 cm{sup 2} V{sup -1} s{sup -1}. These values are close to the best mobilities obtained in QQT(CN)4 devices fabricated on SiO{sub 2} treated with octadecyltrichlorosilane. The influence of the metal used for source/drain metal electrodes on the device performance is also investigated. Whereas best device performances are achieved with gold electrodes, more balanced electron and hole field-effect mobilities could be obtained using chromium.

  20. High-performance ambipolar self-assembled Au/Ag nanowire based vertical quantum dot field effect transistor.

    Science.gov (United States)

    Song, Xiaoxian; Zhang, Yating; Zhang, Haiting; Yu, Yu; Cao, Mingxuan; Che, Yongli; Wang, Jianlong; Dai, Haitao; Yang, Junbo; Ding, Xin; Yao, Jianquan

    2016-10-07

    Most lateral PbSe quantum dot field effect transistors (QD FETs) show a low on current/off current (I on/I off) ratio in charge transport measurements. A new strategy to provide generally better performance is to design PbSe QD FETs with vertical architecture, in which the structure parameters can be tuned flexibly. Here, we fabricated a novel room-temperature operated vertical quantum dot field effect transistor with a channel of 580 nm, where self-assembled Au/Ag nanowires served as source transparent electrodes and PbSe quantum dots as active channels. Through investigating the electrical characterization, the ambipolar device exhibited excellent characteristics with a high I on/I off current ratio of about 1 × 10(5) and a low sub-threshold slope (0.26 V/decade) in the p-type regime. The all-solution processing vertical architecture provides a convenient way for low cost, large-area integration of the device.

  1. Whether diffusion in axisymmetric confinement systems is intrinsically ambipolar

    International Nuclear Information System (INIS)

    Kovrizhnykh, L.M.

    1997-01-01

    The problem of diffusion ambipolarity in axisymmetric magnetic systems is analyzed. The question is discussed of whether diffusion is intrinsically ambipolar (and if so, then in which particular cases) or the ambipolarity constraint is an additional independent condition, which does not follow from the equations of motion and, hence, contains new information. It is shown that the second assertion is correct: strictly speaking, diffusion can never be intrinsically ambipolar, and, in the presence of several different mechanisms causing electron and ion losses across the magnetic field, only the total fluxes, but not the partial ones, should satisfy the ambipolarity constraint. (UK)

  2. Flexible ambipolar organic field-effect transistors with reverse-offset-printed silver electrodes for a complementary inverter.

    Science.gov (United States)

    Park, Junsu; Kim, Minseok; Yeom, Seung-Won; Ha, Hyeon Jun; Song, Hyenggun; Min Jhon, Young; Kim, Yun-Hi; Ju, Byeong-Kwon

    2016-06-03

    We report ambipolar organic field-effect transistors and complementary inverter circuits with reverse-offset-printed (ROP) Ag electrodes fabricated on a flexible substrate. A diketopyrrolopyrrole-based co-polymer (PDPP-TAT) was used as the semiconductor and poly(methyl methacrylate) was used as the gate insulator. Considerable improvement is observed in the n-channel electrical characteristics by inserting a cesium carbonate (Cs2CO3) as the electron-injection/hole-blocking layer at the interface between the semiconductors and the electrodes. The saturation mobility values are 0.35 cm(2) V(-1) s(-1) for the p-channel and 0.027 cm(2) V(-1) s(-1) for the n-channel. A complementary inverter is demonstrated based on the ROP process, and it is selectively controlled by the insertion of Cs2CO3 onto the n-channel region via thermal evaporation. Moreover, the devices show stable operation during the mechanical bending test using tensile strains ranging from 0.05% to 0.5%. The results confirm that these devices have great potential for use in flexible and inexpensive integrated circuits over a large area.

  3. Probing the density of trap states in the middle of the bandgap using ambipolar organic field-effect transistors

    Science.gov (United States)

    Häusermann, Roger; Chauvin, Sophie; Facchetti, Antonio; Chen, Zhihua; Takeya, Jun; Batlogg, Bertram

    2018-04-01

    The number of trap states in the band gap of organic semiconductors directly influences the charge transport as well as the threshold and turn-on voltage. Direct charge transport measurements have been used until now to probe the trap states rather close to the transport level, whereas their number in the middle of the band gap has been elusive. In this study, we use PDIF-CN2, a well known n-type semiconductor, together with vanadium pentoxide electrodes to build ambipolar field-effect transistors. Employing three different methods, we study the density of trap states in the band gap of the semiconductor. These methods give consistent results, and no pool of defect states was found. Additionally, we show first evidence that the number of trap states close to the transport level is correlated with the number of traps in the middle of the band-gap, meaning that a high number of trap states close to the transport level also implies a high number of trap states in the middle of the band gap. This points to a common origin of the trap states over a wide energy range.

  4. Vertically aligned carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi; Zhao, Chao; Wang, Qingxiao; Zhang, Qiang; Wang, Zhihong; Zhang, Xixiang; Abutaha, Anas I.; Alshareef, Husam N.

    2012-01-01

    Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been developed using pure semiconducting carbon nanotubes. The source and drain were vertically stacked, separated by a dielectric, and the carbon nanotubes were placed

  5. Open trap with ambipolar mirrors

    International Nuclear Information System (INIS)

    Dimov, G.I.; Zakajdakov, V.V.; Kishinevskij, M.E.

    1977-01-01

    Results of numerical calculations on the behaviour of a thermonuclear plasma, allowing for α-particles in a trap with longitudinal confinement of the main ions by ambipolar electric fields are presented. This trap is formed by connecting two small-volume ''mirrortrons'' to an ordinary open trap. Into the extreme mirrortrons, approximately 1-MeV ions are introduced continuously by ionization of atomic beams on the plasma, and approximately 10-keV ions are similarly introduced into the main central region of the trap. By a suitable choice of injection currents, the plasma density established in the extreme mirrortrons is higher than in the central region. As a result of the quasi-neutrality condition, a longitudinal ambipolar field forming a potential well not only for electrons but also for the central ions is formed in the plasma. When the depth of the well for the central ions is much greater than their temperature, their life-time considerably exceeds the time of confinement by the magnetic mirrors. As a result, the plasma density is constant over the entire length of the central mirrortron, including the regions near the mirrors, and an ambipolar field is formed only in the extreme mirrortrons. The distribution of central ions and ambipolar potential in the extreme mirrortrons is uniquely determined by the density distribution of fast extreme ions. It is shown in the present study that an amplification coefficient Q as high as desired can, in principle, be reached in the trap under consideration, allowing for α-particles. However, this requires high magnetic fields in the mirrors and a sufficient length of the central mirrotron. It is shown that for moderate values of Q=3-8, it is desirable not to confine the central fast α-particles. To achieve a coefficient of Q=5, it is necessary to create fields of 250 kG in the mirrors, and the length of the trap must not be greater than 100 m. (author)

  6. Photoelectron reflection and scattering at Venus: an upper limit on the "polar wind" ambipolar electric field, and a new source of top-side ionospheric heating

    Science.gov (United States)

    Collinson, Glyn; Glocer, Alex; Grebowsky, Joe; Peterson, William; Frahm, Rudy; Moore, Thomas; Gilbert, Lin; Coates, Andrew

    2015-04-01

    An important mechanism in the generation of Earth's polar wind is the ambipolar potential generated by the outflow along open field lines of superthermal electrons. This ≈20V electric potential assists ions in overcoming the gravitational potential, and is a key mechanism for Terrestrial ionospheric escape. At Venus, except in rare circumstances, every field line is open, and a similar outflow of ionospheric electrons is observed. It is thus hypothesized that a similar electric potential may be present at Venus, contributing to global ionospheric loss. However, a very sensitive electric field instrument would be required to directly measure this potential, and no such instrument has yet been flown to Venus. In this pilot study, we examine photoelectron spectra measured by the ASPERA-ELS instrument on the Venus Express to put an initial upper bound on the total potential drop above 350km of Φ current understanding, a "polar wind" like ambipolar electric field may not be as important a mechanism for atmospheric escape as previously suspected. Additionally, we find our spectra are consistent with the scattering of photoelectrons, the heating from which which we hypothesize may act as a source of top-side ionospheric heating, and may play a role in influencing the scale height of the ionosphere.

  7. A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature

    Science.gov (United States)

    Yadav, Dharmendra Singh; Raad, Bhagwan Ram; Sharma, Dheeraj

    2016-12-01

    In this paper, we focus on the improvement of figures of merit for charge plasma based tunnel field-effect transistor (TFET) in terms of ON-state current, threshold voltage, sub-threshold swing, ambipolar nature, and gate to drain capacitance which provides better channel controlling of the device with improved high frequency response at ultra-low supply voltages. Regarding this, we simultaneously employ work function engineering on the drain and gate electrode of the charge plasma TFET. The use of gate work function engineering modulates the barrier on the source/channel interface leads to improvement in the ON-state current, threshold voltage, and sub-threshold swing. Apart from this, for the first time use of work function engineering on the drain electrode increases the tunneling barrier for the flow of holes on the drain/channel interface, it results into suppression of ambipolar behavior. The lowering of gate to drain capacitance therefore enhanced high frequency parameters. Whereas, the presence of dual work functionality at the gate electrode and over the drain region improves the overall performance of the charge plasma based TFET.

  8. The Electric Wind of Venus: A Global and Persistent Polar Wind -Like Ambipolar Electric Field Sufficient for the Direct Escape of Heavy Ionospheric Ions

    Science.gov (United States)

    Collinson, Glyn A.; Frahm, Rudy A.; Glocer, Alex; Coates, Andrew J.; Grebowsky, Joseph M.; Barabash, Stas; Domagal-Goldman, Shawn D.; Federov, Andrei; Futaana, Yoshifumi; Gilbert, Lin K.; hide

    2016-01-01

    Understanding what processes govern atmospheric escape and the loss of planetary water is of paramount importance for understanding how life in the universe can exist. One mechanism thought to be important at all planets is an ambipolar electric field that helps ions overcome gravity. We report the discovery and first quantitative extraterrestrial measurements of such a field at the planet Venus. Unexpectedly, despite comparable gravity, we show the field to be five times stronger than in Earths similar ionosphere. Contrary to our understanding, Venus would still lose heavy ions (including oxygen and all water-group species) to space, even if there were no stripping by the solar wind. We therefore find that it is possible for planets to lose heavy ions to space entirely through electric forces in their ionospheres and such an electric wind must be considered when studying the evolution and potential habitability of any planet in any star system.

  9. Field electron emission from branched nanotubes film

    International Nuclear Information System (INIS)

    Zeng Baoqing; Tian Shikai; Yang Zhonghai

    2005-01-01

    We describe the preparation and analyses of films composed of branched carbon nanotubes (CNTs). The CNTs were grown on a Ni catalyst film using chemical vapor deposition from a gas containing acetylene. From scanning electron microscope (SEM) and transmission electron microscope (TEM) analyses, the branched structure of the CNTs was determined; the field emission characteristics in a vacuum chamber indicated a lower turn on field for branched CNTs than normal CNTs

  10. Stefan-Maxwell Relations and Heat Flux with Anisotropic Transport Coefficients for Ionized Gases in a Magnetic Field with Application to the Problem of Ambipolar Diffusion

    Science.gov (United States)

    Kolesnichenko, A. V.; Marov, M. Ya.

    2018-01-01

    The defining relations for the thermodynamic diffusion and heat fluxes in a multicomponent, partially ionized gas mixture in an external electromagnetic field have been obtained by the methods of the kinetic theory. Generalized Stefan-Maxwell relations and algebraic equations for anisotropic transport coefficients (the multicomponent diffusion, thermal diffusion, electric and thermoelectric conductivity coefficients as well as the thermal diffusion ratios) associated with diffusion-thermal processes have been derived. The defining second-order equations are derived by the Chapman-Enskog procedure using Sonine polynomial expansions. The modified Stefan-Maxwell relations are used for the description of ambipolar diffusion in the Earth's ionospheric plasma (in the F region) composed of electrons, ions of many species, and neutral particles in a strong electromagnetic field.

  11. Current density fluctuations and ambipolarity of transport

    International Nuclear Information System (INIS)

    Shen, W.; Dexter, R.N.; Prager, S.C.

    1991-10-01

    The fluctuation in the plasma current density is measured in the MIST reversed field pinch experiment. Such fluctuations, and the measured radial profile of the k spectrum of magnetic fluctuations, supports the view and that low frequency fluctuations (f r >) demonstrates that radial particle transport from particle motion parallel to a fluctuating magnetic field is ambipolar over the full frequency range

  12. Solid-State Organization and Ambipolar Field-Effect Transistors of Benzothiadiazole-Cyclopentadithiophene Copolymer with Long Branched Alkyl Side Chains

    Directory of Open Access Journals (Sweden)

    Martin Baumgarten

    2013-06-01

    Full Text Available The solid-state organization of a benzothiadiazole-cyclopentadithiophene copolymer with long, branched decyl-tetradecyl side chains (CDT-BTZ-C14,10 is investigated. The C14,10 substituents are sterically demanding and increase the π-stacking distance to 0.40 nm from 0.37 nm for the same polymer with linear hexadecyls (C16. Despite the bulkiness, the C14,10 side chains tend to crystallize, leading to a small chain-to-chain distance between lamellae stacks and to a crystal-like microstructure in the thin film. Interestingly, field-effect transistors based on solution processed layers of CDT-BTZ-C14,10 show ambipolar behavior in contrast to CDT-BTZ-C16 with linear side chains, for which hole transport was previously observed. Due to the increased π-stacking distance, the mobilities are only 6 × 10−4 cm²/Vs for electrons and 6 × 10−5 cm²/Vs for holes, while CDT-BTZ-C16 leads to values up to 5.5 cm²/Vs. The ambipolarity is attributed to a lateral shift between stacked backbones provoked by the bulky C14,10 side chains. This reorganization is supposed to change the transfer integrals between the C16 and C14,10 substituted polymers. This work shows that the electronic behavior in devices of one single conjugated polymer (in this case CDT-BTZ can be controlled by the right choice of the substituents to place the backbones in the desired packing.

  13. Electrophoretic deposition and field emission properties of patterned carbon nanotubes

    International Nuclear Information System (INIS)

    Zhao Haifeng; Song Hang; Li Zhiming; Yuan Guang; Jin Yixin

    2005-01-01

    Patterned carbon nanotubes on silicon substrates were obtained using electrophoretic method. The carbon nanotubes migrated towards the patterned silicon electrode in the electrophoresis suspension under the applied voltage. The carbon nanotubes arrays adhered well on the silicon substrates. The surface images of carbon nanotubes were observed by scanning electron microscopy. The field emission properties of the patterned carbon nanotubes were tested in a diode structure under a vacuum pressure below 5 x 10 -4 Pa. The measured emission area was about 1.0 mm 2 . The emission current density up to 30 mA/cm 2 at an electric field of 8 V/μm has been obtained. The deposition of patterned carbon nanotubes by electrophoresis is an alternative method to prepare field emission arrays

  14. Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning

    KAUST Repository

    Kong, Desheng

    2011-10-02

    Topological insulators exhibit a bulk energy gap and spin-polarized surface states that lead to unique electronic properties 1-9, with potential applications in spintronics and quantum information processing. However, transport measurements have typically been dominated by residual bulk charge carriers originating from crystal defects or environmental doping 10-12, and these mask the contribution of surface carriers to charge transport in these materials. Controlling bulk carriers in current topological insulator materials, such as the binary sesquichalcogenides Bi 2Te 3, Sb 2Te 3 and Bi 2Se 3, has been explored extensively by means of material doping 8,9,11 and electrical gating 13-16, but limited progress has been made to achieve nanostructures with low bulk conductivity for electronic device applications. Here we demonstrate that the ternary sesquichalcogenide (Bi xSb 1-x) 2Te 3 is a tunable topological insulator system. By tuning the ratio of bismuth to antimony, we are able to reduce the bulk carrier density by over two orders of magnitude, while maintaining the topological insulator properties. As a result, we observe a clear ambipolar gating effect in (Bi xSb 1-x) 2Te 3 nanoplate field-effect transistor devices, similar to that observed in graphene field-effect transistor devices 17. The manipulation of carrier type and density in topological insulator nanostructures demonstrated here paves the way for the implementation of topological insulators in nanoelectronics and spintronics. © 2011 Macmillan Publishers Limited. All rights reserved.

  15. Cylindrical-shaped nanotube field effect transistor

    KAUST Repository

    Hussain, Muhammad Mustafa

    2015-12-29

    A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (I.sub.on/I.sub.off) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.

  16. Cylindrical-shaped nanotube field effect transistor

    KAUST Repository

    Hussain, Muhammad Mustafa; Fahad, Hossain M.; Smith, Casey E.; Rojas, Jhonathan Prieto

    2015-01-01

    A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (I.sub.on/I.sub.off) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.

  17. Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

    KAUST Repository

    Montes Muñoz, Enrique

    2017-01-24

    We investigate the electronic transport properties of silicon nanotubes attached to metallic electrodes from first principles, using density functional theory and the non-equilibrium Green\\'s function method. The influence of the surface termination is studied as well as the dependence of the transport characteristics on the chirality, diameter, and length. Strong electronic coupling between nanotubes and electrodes is found to be a general feature that results in low contact resistance. The conductance in the tunneling regime is discussed in terms of the complex band structure. Silicon nanotube field effect transistors are simulated by applying a uniform potential gate. Our results demonstrate very high values of transconductance, outperforming the best commercial silicon field effect transistors, combined with low values of sub-threshold swing.

  18. Simulation and fabrication of carbon nanotubes field emission pressure sensors

    International Nuclear Information System (INIS)

    Qian Kaiyou; Chen Ting; Yan Bingyong; Lin Yangkui; Xu Dong; Sun Zhuo; Cai Bingchu

    2006-01-01

    A novel field emission pressure sensor has been achieved utilizing carbon nanotubes (CNTs) as the electron source. The sensor consists of the anode sensing film fabricated by wet etching process and multi-wall carbon nanotubes (MWNTs) cathode in the micro-vacuum chamber. MWNTs on the silicon substrate were grown by thermal CVD. The prototype pressure sensor has a measured sensitivity of about 0.17-0.77 nA/Pa (101-550 KPa). The work shows the potential use of CNTs-based field-emitter in microsensors, such as accelerometers and tactile sensors

  19. Linear Optical Response of Silicon Nanotubes Under Axial Magnetic Field

    Science.gov (United States)

    Chegel, Raad; Behzad, Somayeh

    2013-01-01

    We investigated the optical properties of silicon nanotubes (SiNTs) in the low energy region, E < 0.5 eV, and middle energy region, 1.8 eV < E < 2 eV. The dependence of optical matrix elements and linear susceptibility on radius and magnetic field, in terms of one-dimensional (1-d) wavevector and subband index, is calculated using the tight-binding approximation. It is found that, on increasing the nanotube diameter, the low-energy peaks show red-shift and their intensities are decreased. Also, we found that in the middle energy region all tubes have two distinct peaks, where the energy position of the second peak is approximately constant and independent of the nanotube diameter. Comparing the band structure of these tubes in different magnetic fields, several differences are clearly seen, such as splitting of degenerate bands, creation of additional band-edge states, and bandgap modification. It is found that applying the magnetic field leads to a phase transition in zigzag silicon hexagonal nanotubes (Si h-NTs), unlike in zigzag silicon gear-like nanotubes (Si g-NTs), which remain semiconducting in any magnetic field. We found that the axial magnetic field has two effects on the linear susceptibility spectrum, namely broadening and splitting. The axial magnetic field leads to the creation of a peak with energy less than 0.2 eV in metallic Si h-NTs, whereas in the absence of a magnetic field such a transition is not allowed.

  20. Ambipolar potential formation in TMX

    International Nuclear Information System (INIS)

    Correl, D.L.; Allen, S.L.; Casper, T.A.

    1981-01-01

    TMX experimental data on ambipolar potential control and on the accompanying electrostatic confinement are reported. New results on the radial dependence of the central-cell confining potential are given. Radial and axial particle losses as well as scaling of the central-cell axial confinement are discussed

  1. Field emission properties of the graphenated carbon nanotube electrode

    Energy Technology Data Exchange (ETDEWEB)

    Zanin, H., E-mail: hudson.zanin@bristol.ac.uk [School of Chemistry, University of Bristol, Bristol BS8 1TS (United Kingdom); Faculdade de Engenharia Elétrica e Computação, Departamento de Semicondutores, Instrumentos e Fotônica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N. 400, CEP 13 083-852 Campinas, São Paulo (Brazil); Ceragioli, H.J.; Peterlevitz, A.C.; Baranauskas, Vitor [Faculdade de Engenharia Elétrica e Computação, Departamento de Semicondutores, Instrumentos e Fotônica, Universidade Estadual de Campinas, UNICAMP, Av. Albert Einstein N. 400, CEP 13 083-852 Campinas, São Paulo (Brazil); Marciano, F.R.; Lobo, A.O. [Laboratory of Biomedical Nanotechnology/Institute of Research and Development at UNIVAP, Av. Shishima Hifumi, 2911, CEP 12244-000 Sao Jose dos Campos, SP (Brazil)

    2015-01-01

    Graphical abstract: - Highlights: • Facile method to prepare graphenated carbon nanotubes (g-CNTs). • The electric field emission behaviour of g-CNTs was studied. • g-CNTs show better emission current stability than non-graphenated CNTs. - Abstract: Reduced graphene oxide-coated carbon nanotubes (RGO-CNT) electrodes have been prepared by hot filament chemical vapour deposition system in one-step growth process. We studied RGO-CNT electrodes behaviour as cold cathode in field emission test. Our results show that RGO-CNT retain the low threshold voltage typical of CNTs, but with greatly improved emission current stability. The field emission enhancement value is significantly higher than that expected being caused by geometric effect (height divided by the radius of nanotube). This suggested that the field emission of this hybrid structure is not only from a single tip, but eventually it is from several tips with contribution of graphene nanosheets at CNT's walls. This phenomenon explains why the graphenated carbon nanotubes do not burn out as quickly as CNT does until emission ceases completely. These preliminaries results make nanocarbon materials good candidates for applications as electron sources for several devices.

  2. Waferscale assembly of Field-Aligned nanotube Networks (FANs)

    DEFF Research Database (Denmark)

    Dimaki, Maria; Bøggild, Peter

    2006-01-01

    We demonstrate the integration of nanotube networks on 512 individual devices on a full 4-inch wafer in less than 60 seconds with a roughly 80% yield using dielectrophoresis. We present here investigations of the morphology and electrical resistance of such field aligned networks for different fr...

  3. Development of Field-Emission Electron Gun from Carbon Nanotubes

    CERN Document Server

    Hozumi, Y

    2004-01-01

    Aiming to use a narrow energy-spread electron beam easily and low costly on injector electron guns, we have been tested field emission cathodes of carbon nanotubes (CNTs). Experiments for these three years brought us important suggestions and a few rules of thumb. Now at last, anode current of 3.0 [A/cm2

  4. Vertically aligned carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi

    2012-10-01

    Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been developed using pure semiconducting carbon nanotubes. The source and drain were vertically stacked, separated by a dielectric, and the carbon nanotubes were placed on the sidewall of the stack to bridge the source and drain. Both the effective gate dielectric and gate electrode were normal to the substrate surface. The channel length is determined by the dielectric thickness between source and drain electrodes, making it easier to fabricate sub-micrometer transistors without using time-consuming electron beam lithography. The transistor area is much smaller than the planar CNTFET due to the vertical arrangement of source and drain and the reduced channel area. © 2012 Elsevier Ltd. All rights reserved.

  5. Intrinsic Ambipolarity and Rotation in Stellarators

    International Nuclear Information System (INIS)

    Helander, P.; Simakov, A. N.

    2008-01-01

    It is shown that collisional plasma transport is intrinsically ambipolar only in quasiaxisymmetric or quasihelically symmetric magnetic configurations. Only in such fields can the plasma rotate freely, and then only in the direction of quasisymmetry. In a non-quasi-symmetric magnetic field, the average radial electric field is determined by parallel viscosity, which in turn is usually governed by collisional processes. Locally, the radial electric field may be affected by turbulent Reynolds stress producing zonal flows, but on a radial average taken over several ion gyroradii, it is determined by parallel viscosity, at least if the turbulence is electrostatic and obeys the conventional gyrokinetic orderings. This differs from the situation in a tokamak, where there is no flow damping by parallel viscosity in the symmetry direction and the turbulent Reynolds stress may affect the global radial electric field

  6. Carbon nanotube feedback-gate field-effect transistor: suppressing current leakage and increasing on/off ratio.

    Science.gov (United States)

    Qiu, Chenguang; Zhang, Zhiyong; Zhong, Donglai; Si, Jia; Yang, Yingjun; Peng, Lian-Mao

    2015-01-27

    Field-effect transistors (FETs) based on moderate or large diameter carbon nanotubes (CNTs) usually suffer from ambipolar behavior, large off-state current and small current on/off ratio, which are highly undesirable for digital electronics. To overcome these problems, a feedback-gate (FBG) FET structure is designed and tested. This FBG FET differs from normal top-gate FET by an extra feedback-gate, which is connected directly to the drain electrode of the FET. It is demonstrated that a FBG FET based on a semiconducting CNT with a diameter of 1.5 nm may exhibit low off-state current of about 1 × 10(-13) A, high current on/off ratio of larger than 1 × 10(8), negligible drain-induced off-state leakage current, and good subthreshold swing of 75 mV/DEC even at large source-drain bias and room temperature. The FBG structure is promising for CNT FETs to meet the standard for low-static-power logic electronics applications, and could also be utilized for building FETs using other small band gap semiconductors to suppress leakage current.

  7. Field emission of carbon nanotubes grown on nickel substrate

    International Nuclear Information System (INIS)

    Hu Yemin; Huo Kaifu; Chen Hong; Lu Yinong; Xu Li; Hu Zheng; Chen Yi

    2006-01-01

    Carbon nanotubes (CNTs) have been synthesized directly on the electrically conducting nickel substrate without additional catalyst. Field emission properties of the as-prepared sample were characterized using parallel plate diode configurations. It was observed that the field emission qualitatively follows the conventional Fowler-Nordheim (F-N) theory from the straight line of ln(I/V 2 ) versus 1/V plot at the high applied field region. The uniformity and stability of the electron emission have also been examined. The low electron turn-on field (E to ) and high emission current density indicates the potential applications of this new CNT-based emitter

  8. Field penetration induced charge redistribution effects on the field emission properties of carbon nanotubes - a first-principle study

    International Nuclear Information System (INIS)

    Chen, C.-W.; Lee, M.-H.; Clark, S.J.

    2004-01-01

    The effect of field penetration induced charge redistribution on the field emission properties of carbon nanotubes (CNTs) have been studied by the first-principle calculations. It is found that the carbon nanotube becomes polarized under external electric field leading to a charge redistribution. The resulting band bending induced by field penetration into the nanotube tip surface can further reduce the effective workfunction of the carbon nanotubes. The magnitude of the redistributed charge ΔQ is found to be nearly linear to the applied external field strength. In addition, we found that the capped (9, 0) zigzag nanotube demonstrates better field emission properties than the capped (5, 5) armchair nanotube due to the fact that the charge redistribution of π electrons along the zigzag-like tube axis is easier than for the armchair-like tube. The density of states (DOS) of the capped region of the nanotube is found to be enhanced with a value 30% higher than that of the sidewall part for the capped (5, 5) nanotube and 40% for the capped (9, 0) nanotube under an electric field of 0.33 V/A. Such enhancements of the DOS at the carbon nanotube tip show that electrons near the Fermi level will emit more easily due to the change of the surface band structure resulting from the field penetration in a high field

  9. Measurement of current density fluctuations and ambipolar particle flux due to magnetic fluctuations in MST

    International Nuclear Information System (INIS)

    Shen, Weimin.

    1992-08-01

    Studies of magnetic fluctuation induced particle transport on Reversed Field Pinch plasmas were done on the Madison Symmetric Torus. Plasma current density and current density fluctuations were measured using a multi-coil magnetic probes. The low frequency (f parallel B r >. The result of zero net charged particle loss was obtained, meaning the flux is ambipolar. The ambipolarity of low frequency global tearing modes is satisfied through the phase relations determined by tearing instabilities. The ambipolarity of high frequency localized modes could be partially explained by the simple model of Waltz based on the radial average of small scale turbulence

  10. Fowler Nordheim theory of carbon nanotube based field emitters

    Energy Technology Data Exchange (ETDEWEB)

    Parveen, Shama; Kumar, Avshish [Department of Physics, Jamia Millia Islamia (Central University), New Delhi (India); Husain, Samina [Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (Central University), New Delhi (India); Husain, Mushahid, E-mail: mush_reslab@rediffmail.com [Department of Physics, Jamia Millia Islamia (Central University), New Delhi (India)

    2017-01-15

    Field emission (FE) phenomena are generally explained in the frame-work of Fowler Nordheim (FN) theory which was given for flat metal surfaces. In this work, an effort has been made to present the field emission mechanism in carbon nanotubes (CNTs) which have tip type geometry at nanoscale. High aspect ratio of CNTs leads to large field enhancement factor and lower operating voltages because the electric field strength in the vicinity of the nanotubes tip can be enhanced by thousand times. The work function of nanostructure by using FN plot has been calculated with reverse engineering. With the help of modified FN equation, an important formula for effective emitting area (active area for emission of electrons) has been derived and employed to calculate the active emitting area for CNT field emitters. Therefore, it is of great interest to present a state of art study on the complete solution of FN equation for CNTs based field emitter displays. This manuscript will also provide a better understanding of calculation of different FE parameters of CNTs field emitters using FN equation.

  11. Ambipolar diffusion in plasma

    International Nuclear Information System (INIS)

    Silva, T.L. da.

    1987-01-01

    Is this thesis, a numerical method for the solution of the linear diffusion equation for a plasma containing two types of ions, with the possibility of charge exchange, has been developed. It has been shown that the decay time of the electron and ion densities is much smaller than that in a plasma containing only a single type of ion. A non-linear diffusion equation, which includes the effects of an external electric field varying linearly in time, to describe a slightly ionized plasma has also been developed. It has been verified that the decay of the electron density in the presence of such an electric field is very slow. (author)

  12. Magnetic Field Effect on Ultrashort Two-dimensional Optical Pulse Propagation in Silicon Nanotubes

    Science.gov (United States)

    Konobeeva, N. N.; Evdokimov, R. A.; Belonenko, M. B.

    2018-05-01

    The paper deals with the magnetic field effect which provides a stable propagation of ultrashort pulses in silicon nanotubes from the viewpoint of their waveform. The equation is derived for the electromagnetic field observed in silicon nanotubes with a glance to the magnetic field for two-dimensional optical pulses. The analysis is given to the dependence between the waveform of ultrashort optical pulses and the magnetic flux passing through the cross-sectional area of the nanotube.

  13. Electron field emission characteristics of carbon nanotube on tungsten tip

    International Nuclear Information System (INIS)

    Phan Ngoc Hong; Bui Hung Thang; Nguyen Tuan Hong; Phan Ngoc Minh; Lee, Soonil

    2009-01-01

    Electron field emission characteristic of carbon nanotubes on tungsten tip was investigated in 2x10 -6 Torr vacuum. The measurement results showed that the CNTs/W tip could emit electron at 0.7 V/μm (nearly 10 times lower than that of the W tip itself) and reach up to 26 μA at the electric field of 1 V/μm. The emission characteristic follows the Fowler-Nordheim mechanism. Analysis of the emission characteristic showed that the CNTs/W tip has a very high value of field enhancement factor (β = 4.1 x 10 4 cm -1 ) that is much higher than that of the tungsten tip itself. The results confirmed the excellent field emission behavior of the CNTs materials and the CNTs/W tip is a prospective candidate for advanced electron field emitter.

  14. A fabrication method for field emitter array of carbon nanotubes with improved carbon nanotube rooting

    Energy Technology Data Exchange (ETDEWEB)

    Chouhan, V., E-mail: vchouhan@post.kek.jp [School of High Energy Accelerator, The Graduate University for Advanced Studies, Tsukuba 305-0801 (Japan); Noguchi, T. [High Energy Accelerator Research Organization (KEK), Tsukuba 305-0801 (Japan); Kato, S. [School of High Energy Accelerator, The Graduate University for Advanced Studies, Tsukuba 305-0801 (Japan); High Energy Accelerator Research Organization (KEK), Tsukuba 305-0801 (Japan)

    2015-11-30

    We have developed a technique for fabrication of a field emitter array (FEA) of carbon nanotubes (CNTs) to obtain a high emission current along with a high current density. The FEA was prepared with many small equidistant circular emitters of randomly oriented multiwall carbon nanotubes. The fabrication of a FEA substrate followed with deposition of titanium nitride (TiN) film on a tantalum (Ta) substrate and circular titanium (Ti) islands on the TiN coated Ta substrate in a DC magnetron sputtering coater. CNTs were dispersed on the substrate and rooted into the circular Ti islands at a high temperature to prepare an array of circular emitters of CNTs. The TiN film was applied on a Ta substrate to make a reaction barrier between the Ta substrate and CNTs in order to root CNTs only into the Ti islands without a reaction with the Ta substrate at the high temperature. A high emission current of 31.7 mA with an effective current density of 34.5 A/cm{sup 2} was drawn at 6.5 V/μm from a FEA having 130 circular emitters in a diameter of 50 μm and with a pitch of 200 μm. The high emission current was ascribed to the good quality rooting of CNTs into the Ti islands and an edge effect, in which a high emission current was expected from the peripheries of the circular emitters. - Highlights: • We developed a method to fabricate a field emitter array of carbon nanotubes (CNTs). • CNT rooting into array of titanium islands was improved at a high temperature. • Titanium nitride film was used to stop reaction between CNT and tantalum substrate. • Strong edge effect was achieved from an array of small circular emitters of CNTs. • The good quality CNT rooting and the edge effect enhanced an emission current.

  15. Performance of a carbon nanotube field emission electron gun

    Science.gov (United States)

    Getty, Stephanie A.; King, Todd T.; Bis, Rachael A.; Jones, Hollis H.; Herrero, Federico; Lynch, Bernard A.; Roman, Patrick; Mahaffy, Paul

    2007-04-01

    A cold cathode field emission electron gun (e-gun) based on a patterned carbon nanotube (CNT) film has been fabricated for use in a miniaturized reflectron time-of-flight mass spectrometer (RTOF MS), with future applications in other charged particle spectrometers, and performance of the CNT e-gun has been evaluated. A thermionic electron gun has also been fabricated and evaluated in parallel and its performance is used as a benchmark in the evaluation of our CNT e-gun. Implications for future improvements and integration into the RTOF MS are discussed.

  16. Error correcting circuit design with carbon nanotube field effect transistors

    Science.gov (United States)

    Liu, Xiaoqiang; Cai, Li; Yang, Xiaokuo; Liu, Baojun; Liu, Zhongyong

    2018-03-01

    In this work, a parallel error correcting circuit based on (7, 4) Hamming code is designed and implemented with carbon nanotube field effect transistors, and its function is validated by simulation in HSpice with the Stanford model. A grouping method which is able to correct multiple bit errors in 16-bit and 32-bit application is proposed, and its error correction capability is analyzed. Performance of circuits implemented with CNTFETs and traditional MOSFETs respectively is also compared, and the former shows a 34.4% decrement of layout area and a 56.9% decrement of power consumption.

  17. Magnet system of the ''AMBAL'' experimental trap with ambipolar mirrors

    International Nuclear Information System (INIS)

    Dimov, G.I.; Lysyanskij, P.B.; Tadber, M.V.; Timoshin, I.Ya.; Shrajner, K.K.

    1982-01-01

    A magnet system of the ''AMBAL'' ambipolar trap under construction is described. The trap magnetic field configuration, geometry of the main coils and diagram of the whole device magnet system are outlined. Drift surface cross sections in the equatorial plane of the ring mirror device, in the median plane and at different distances from the trap median plane are presented. The magnet system design is described in brief

  18. Electric field effect in the growth of carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Plaza, E., E-mail: ericvpp@gmail.com; Briceño-Fuenmayor, H. [Instituto Venezolano de Investigaciones Científicas (IVIC), Laboratorio de Física de Fluidos y Plasma (Venezuela, Bolivarian Republic of); Arévalo, J. [Instituto Zuliano de Investigaciones Tecnológicas (INZIT), Unidad de Caracterización y Estructura de Materiales (Venezuela, Bolivarian Republic of); Atencio, R. [Instituto Venezolano de Investigaciones Científicas (IVIC), Centro de Investigación y Tecnología de Materiales (Venezuela, Bolivarian Republic of); Corredor, L. [Instituto Zuliano de Investigaciones Tecnológicas (INZIT), Unidad de Caracterización y Estructura de Materiales (Venezuela, Bolivarian Republic of)

    2015-06-15

    The growth of carbon nanotubes (CNTs) under a controlled electric field in a chemical vapor deposition system is investigated. We evaluate the influence of this external field on the morphological and structural characteristics of CNTs. Scanning electron microscopy results display a large presence of carbonaceous material in the positive plate, which appear to be a consequence of the attraction of electric forces over the electronically unbalanced cracked carbon molecules in the heating zone. We also observe a growth behavior for CNTs, in which catalyst particles are localized either at the bottom or the upper part of the nanotube, depending on the intensity and direction of the electric field. A Raman analysis from all obtained carbon materials shows the presence of two peaks, corresponding to the D ∼ 1340 cm{sup −1} and G ∼ 1590 cm{sup −1} bands attributed to multiwall CNTs. The average diameter of the CNTs is in the range between 90 and 40 nm. These results provide experimental evidence for the dependence of the catalyst and subtract interaction on the growing mechanism, in which weak chemical or electronic interactions could stimulate a top-growing as the strongest base-growing process.

  19. Structures of water molecules in carbon nanotubes under electric fields

    International Nuclear Information System (INIS)

    Winarto,; Takaiwa, Daisuke; Yamamoto, Eiji; Yasuoka, Kenji

    2015-01-01

    Carbon nanotubes (CNTs) are promising for water transport through membranes and for use as nano-pumps. The development of CNT-based nanofluidic devices, however, requires a better understanding of the properties of water molecules in CNTs because they can be very different from those in the bulk. Using all-atom molecular dynamics simulations, we investigate the effect of axial electric fields on the structure of water molecules in CNTs having diameters ranging from (7,7) to (10,10). The water dipole moments were aligned parallel to the electric field, which increases the density of water inside the CNTs and forms ordered ice-like structures. The electric field induces the transition from liquid to ice nanotubes in a wide range of CNT diameters. Moreover, we found an increase in the lifetime of hydrogen bonds for water structures in the CNTs. Fast librational motion breaks some hydrogen bonds, but the molecular pairs do not separate and the hydrogen bonds reform. Thus, hydrogen bonds maintain the water structure in the CNTs, and the water molecules move collectively, decreasing the axial diffusion coefficient and permeation rate

  20. Enhanced field emission from carbon nanotubes by hydrogen plasma treatment

    International Nuclear Information System (INIS)

    Zhi, C.Y.; Bai, X.D.; Wang, E.G.

    2002-01-01

    The field emission capability of the carbon nanotubes (CNTs) has been improved by hydrogen plasma treatment, and the enhanced emission mechanism has been studied systematically using Fourier-transform infrared spectroscopy, Raman, and transmission electron microscopy. The hydrogen concentration in the samples increases with increasing plasma treatment duration. A C δ- -H δ+ dipole layer may form on CNTs' surface and a high density of defects results from the plasma treatment, which is likely to make the external surface of CNTs more active to emit electrons after treatment. In addition, the sharp edge of CNTs' top, after removal of the catalyst particles, may increase the local electronic field more effectively. The present study suggests that hydrogen plasma treatment is a useful method for improving the field electron emission property of CNTs

  1. Potential of carbon nanotube field effect transistors for analogue circuits

    KAUST Repository

    Hayat, Khizar

    2013-05-11

    This Letter presents a detailed comparison of carbon nanotube field effect transistors (CNFETs) and metal oxide semiconductor field effect transistors (MOSFETs) with special focus on carbon nanotube FET\\'s potential for implementing analogue circuits in the mm-wave and sub-terahertz range. The latest CNFET lithographic dimensions place it at-par with complementary metal oxide semiconductor in terms of current handling capability, whereas the forecasted improvement in the lithography enables the CNFETs to handle more than twice the current of MOSFETs. The comparison of RF parameters shows superior performance of CNFETs with a g m , f T and f max of 2.7, 2.6 and 4.5 times higher, respectively. MOSFET- and CNFET-based inverter, three-stage ring oscillator and LC oscillator have been designed and compared as well. The CNFET-based inverters are found to be ten times faster, the ring oscillator demonstrates three times higher oscillation frequency and CNFET-based LC oscillator also shows improved performance than its MOSFET counterpart.

  2. Potential of carbon nanotube field effect transistors for analogue circuits

    KAUST Repository

    Hayat, Khizar; Cheema, Hammad; Shamim, Atif

    2013-01-01

    This Letter presents a detailed comparison of carbon nanotube field effect transistors (CNFETs) and metal oxide semiconductor field effect transistors (MOSFETs) with special focus on carbon nanotube FET's potential for implementing analogue circuits in the mm-wave and sub-terahertz range. The latest CNFET lithographic dimensions place it at-par with complementary metal oxide semiconductor in terms of current handling capability, whereas the forecasted improvement in the lithography enables the CNFETs to handle more than twice the current of MOSFETs. The comparison of RF parameters shows superior performance of CNFETs with a g m , f T and f max of 2.7, 2.6 and 4.5 times higher, respectively. MOSFET- and CNFET-based inverter, three-stage ring oscillator and LC oscillator have been designed and compared as well. The CNFET-based inverters are found to be ten times faster, the ring oscillator demonstrates three times higher oscillation frequency and CNFET-based LC oscillator also shows improved performance than its MOSFET counterpart.

  3. Large-scale aligned silicon carbonitride nanotube arrays: Synthesis, characterization, and field emission property

    International Nuclear Information System (INIS)

    Liao, L.; Xu, Z.; Liu, K. H.; Wang, W. L.; Liu, S.; Bai, X. D.; Wang, E. G.; Li, J. C.; Liu, C.

    2007-01-01

    Large-scale aligned silicon carbonitride (SiCN) nanotube arrays have been synthesized by microwave-plasma-assisted chemical vapor deposition using SiH 4 , CH 4 , and N 2 as precursors. The three elements of Si, C, and N are chemically bonded with each other and the nanotube composition can be adjusted by varying the SiH 4 concentration, as revealed by electron energy loss spectroscopy and x-ray photoelectron spectroscopy. The evolution of microstructure of the SiCN nanotubes with different Si concentrations was characterized by high-resolution transmission electron microscopy and Raman spectroscopy. The dependence of field emission characteristics of the SiCN nanotubes on the composition has been investigated. With the increasing Si concentration, the SiCN nanotube exhibits more favorable oxidation resistance, which suggests that SiCN nanotube is a promising candidate as stable field emitter

  4. Sensors based on carbon nanotube field-effect transistors and molecular recognition approaches

    OpenAIRE

    Cid Salavert, Cristina Carlota

    2009-01-01

    The general objective of this thesis is to develop chemical sensors whose sensing capacities are based on the principle of molecular recognition and where the transduction is carried out by single-walled carbon nanotubes (SWCNT).The sensing device used is the carbon nanotube field-effect transistor (CNTFET). The new structure of the CNTFET allows nanotubes to be integrated at the surface of the devices, thus exploiting SWCNTs' sensitivity to changes in their environment. The functionalization...

  5. Optical trapping of cold neutral atoms using a two-color evanescent light field around a carbon nanotube

    International Nuclear Information System (INIS)

    Nga, Do Thi; Viet, Nguyen Ai; Nga, Dao Thi Thuy; Lan, Nguyen Thi Phuong

    2014-01-01

    We suggest a new schema of trapping cold atoms using a two-color evanescent light field around a carbon nanotube. The two light fields circularly polarized sending through a carbon nanotube generates an evanescent wave around this nanotube. By evanescent effect, the wave decays away from the nanotube producing a set of trapping minima of the total potential in the transverse plane as a ring around the nanotube. This schema allows capture of atoms to a cylindrical shell around the nanotube. We consider some possible boundary conditions leading to the non-trivial bound state solution. Our result will be compared to some recent trapping models and our previous trapping models.

  6. Evaluations of carbon nanotube field emitters for electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Nakahara, Hitoshi, E-mail: nakahara@nagoya-u.jp [Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Kusano, Yoshikazu; Kono, Takumi; Saito, Yahachi [Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2009-11-30

    Brightness of carbon nanotube (CNT) emitters was already reported elsewhere. However, brightness of electron emitter is affected by a virtual source size of the emitter, which strongly depends on electron optical configuration around the emitter. In this work, I-V characteristics and brightness of a CNT emitter are measured under a practical field emission electron gun (e-gun) configuration to investigate availability of CNT for electron microscopy. As a result, it is obtained that an emission area of MWNT is smaller than its tip surface area, and the emission area corresponds to a five-membered-ring with 2nd nearest six-membered-rings on the MWNT cap surface. Reduced brightness of MWNT is measured as at least 2.6x10{sup 9} A/m{sup 2} sr V. It is concluded that even a thick MWNT has enough brightness under a practical e-gun electrode configuration and suitable for electron microscopy.

  7. Evaluations of carbon nanotube field emitters for electron microscopy

    Science.gov (United States)

    Nakahara, Hitoshi; Kusano, Yoshikazu; Kono, Takumi; Saito, Yahachi

    2009-11-01

    Brightness of carbon nanotube (CNT) emitters was already reported elsewhere. However, brightness of electron emitter is affected by a virtual source size of the emitter, which strongly depends on electron optical configuration around the emitter. In this work, I- V characteristics and brightness of a CNT emitter are measured under a practical field emission electron gun (e-gun) configuration to investigate availability of CNT for electron microscopy. As a result, it is obtained that an emission area of MWNT is smaller than its tip surface area, and the emission area corresponds to a five-membered-ring with 2nd nearest six-membered-rings on the MWNT cap surface. Reduced brightness of MWNT is measured as at least 2.6×109 A/m 2 sr V. It is concluded that even a thick MWNT has enough brightness under a practical e-gun electrode configuration and suitable for electron microscopy.

  8. Increased field-emission site density from regrown carbon nanotube films

    International Nuclear Information System (INIS)

    Wang, Y.Y.; Gupta, S.; Liang, M.; Nemanich, R.J.

    2005-01-01

    Electron field-emission properties of as-grown, etched, and regrown carbon nanotube thin films were investigated. The aligned carbon nanotube films were deposited by the microwave plasma-assisted chemical vapor deposition technique. The surface of the as-grown film contained a carbon nanotube mat of amorphous carbon and entangled nanotubes with some tubes protruding from the surface. Hydrogen plasma etching resulted in the removal of the surface layer, and regrowth on the etched surface displayed the formation of a new carbon nanotube mat. The emission site density and the current-voltage dependence of the field emission from all of the samples were analyzed. The results showed that the as-grown sample had a few strong emission spots and a relatively high emission current density (∼20 μA/cm 2 at 1 V/μm), while the regrown sample exhibited a significantly increased emission site density

  9. Ambipolar solution-processed hybrid perovskite phototransistors

    KAUST Repository

    Li, Feng

    2015-09-08

    Organolead halide perovskites have attracted substantial attention because of their excellent physical properties, which enable them to serve as the active material in emerging hybrid solid-state solar cells. Here we investigate the phototransistors based on hybrid perovskite films and provide direct evidence for their superior carrier transport property with ambipolar characteristics. The field-effect mobilities for triiodide perovskites at room temperature are measured as 0.18 (0.17) cm2 V−1 s−1 for holes (electrons), which increase to 1.24 (1.01) cm2 V−1 s−1 for mixed-halide perovskites. The photoresponsivity of our hybrid perovskite devices reaches 320 A W−1, which is among the largest values reported for phototransistors. Importantly, the phototransistors exhibit an ultrafast photoresponse speed of less than 10 μs. The solution-based process and excellent device performance strongly underscore hybrid perovskites as promising material candidates for photoelectronic applications.

  10. Field emission response from multi-walled carbon nanotubes grown on electrochemically engineered copper foil

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, Amit Kumar; Jain, Vaibhav [Nanomaterials and Applications Lab., Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India); Saini, Krishna [Nanomaterials and Applications Lab., Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India); Centre of Excellence: Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India); Lahiri, Indranil, E-mail: indrafmt@iitr.ac.in [Nanomaterials and Applications Lab., Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India); Centre of Excellence: Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667, Uttarakhand (India)

    2017-02-01

    Exciting properties of carbon nanotube has proven it to be a promising candidate for field emission applications, if its processing cost can be reduced effectively. In this research, a new electrochemical technique is proposed for growing carbon nanotubes in selective areas by thermal chemical vapour deposition. In this process, electrochemical processing is used to create localized pits and deposition of catalysts, which act as roots to support growth and alignment of the CNTs on copper substrate. CNTs grown thus were characterized and studied using scanning electron microscope, transmission electron microscope and Raman spectroscopy, elucidating presence of multiwall carbon nanotubes (MWCNT). These CNT emitters have comparatively lower turn-on field and higher field enhancement factor. - Highlights: • Electrochemical pitting for localized carbon nanotube growth is proposed. • Electrochemical pitting method shows patterning effect on the substrate. • Size and density of pits depend on voltage, pH and temperature. • CNTs thus grown shows good field emission response.

  11. Method of synthesizing small-diameter carbon nanotubes with electron field emission properties

    Science.gov (United States)

    Liu, Jie (Inventor); Du, Chunsheng (Inventor); Qian, Cheng (Inventor); Gao, Bo (Inventor); Qiu, Qi (Inventor); Zhou, Otto Z. (Inventor)

    2009-01-01

    Carbon nanotube material having an outer diameter less than 10 nm and a number of walls less than ten are disclosed. Also disclosed are an electron field emission device including a substrate, an optionally layer of adhesion-promoting layer, and a layer of electron field emission material. The electron field emission material includes a carbon nanotube having a number of concentric graphene shells per tube of from two to ten, an outer diameter from 2 to 8 nm, and a nanotube length greater than 0.1 microns. One method to fabricate carbon nanotubes includes the steps of (a) producing a catalyst containing Fe and Mo supported on MgO powder, (b) using a mixture of hydrogen and carbon containing gas as precursors, and (c) heating the catalyst to a temperature above 950.degree. C. to produce a carbon nanotube. Another method of fabricating an electron field emission cathode includes the steps of (a) synthesizing electron field emission materials containing carbon nanotubes with a number of concentric graphene shells per tube from two to ten, an outer diameter of from 2 to 8 nm, and a length greater than 0.1 microns, (b) dispersing the electron field emission material in a suitable solvent, (c) depositing the electron field emission materials onto a substrate, and (d) annealing the substrate.

  12. Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

    KAUST Repository

    Montes Muñ oz, Enrique; Schwingenschlö gl, Udo

    2017-01-01

    We investigate the electronic transport properties of silicon nanotubes attached to metallic electrodes from first principles, using density functional theory and the non-equilibrium Green's function method. The influence of the surface termination

  13. Gate engineered heterostructure junctionless TFET with Gaussian doping profile for ambipolar suppression and electrical performance improvement

    Science.gov (United States)

    Aghandeh, Hadi; Sedigh Ziabari, Seyed Ali

    2017-11-01

    This study investigates a junctionless tunnel field-effect transistor with a dual material gate and a heterostructure channel/source interface (DMG-H-JLTFET). We find that using the heterostructure interface improves device behavior by reducing the tunneling barrier width at the channel/source interface. Simultaneously, the dual material gate structure decreases ambipolar current by increasing the tunneling barrier width at the drain/channel interface. The performance of the device is analyzed based on the energy band diagram at on, off, and ambipolar states. Numerical simulations demonstrate improvements in ION, IOFF, ION/IOFF, subthreshold slope (SS), transconductance and cut-off frequency and suppressed ambipolar behavior. Next, the workfunction optimization of dual material gate is studied. It is found that if appropriate workfunctions are selected for tunnel and auxiliary gates, the JLTFET exhibits considerably improved performance. We then study the influence of Gaussian doping distribution at the drain and the channel on the ambipolar performance of the device and find that a Gaussian doping profile and a dual material gate structure remarkably reduce ambipolar current. Gaussian doped DMG-H-JLTFET, also exhibits enhanced IOFF, ION/IOFF, SS and a low threshold voltage without degrading IOFF.

  14. Ambipolar ion acceleration in an expanding magnetic nozzle

    Energy Technology Data Exchange (ETDEWEB)

    Longmier, Benjamin W; Carter, Mark D; Cassady, Leonard D; Chancery, William J; Diaz, Franklin R Chang; Glover, Tim W; Ilin, Andrew V; McCaskill, Greg E; Olsen, Chris S; Squire, Jared P [Ad Astra Rocket Company, 141 W. Bay Area Blvd, Webster, TX (United States); Bering, Edgar A III [Department of Physics and Department of Electrical and Computer Engineering, University of Houston, 617 Science and Research Building 1, Houston, TX (United States); Hershkowitz, Noah [Department of Engineering Physics, University of Wisconsin, 1500 Engineering Dr., Madison, WI (United States)

    2011-02-15

    The helicon plasma stage in the Variable Specific Impulse Magnetoplasma Rocket (VASIMR (registered)) VX-200i device was used to characterize an axial plasma potential profile within an expanding magnetic nozzle region of the laboratory based device. The ion acceleration mechanism is identified as an ambipolar electric field produced by an electron pressure gradient, resulting in a local axial ion speed of Mach 4 downstream of the magnetic nozzle. A 20 eV argon ion kinetic energy was measured in the helicon source, which had a peak magnetic field strength of 0.17 T. The helicon plasma source was operated with 25 mg s{sup -1} argon propellant and 30 kW of RF power. The maximum measured values of plasma density and electron temperature within the exhaust plume were 1 x 10{sup 20} m{sup -3} and 9 eV, respectively. The measured plasma density is nearly an order of magnitude larger than previously reported steady-state helicon plasma sources. The exhaust plume also exhibits a 95% to 100% ionization fraction. The size scale and spatial location of the plasma potential structure in the expanding magnetic nozzle region appear to follow the size scale and spatial location of the expanding magnetic field. The thickness of the potential structure was found to be 10{sup 4} to 10{sup 5} {lambda}{sub De} depending on the local electron temperature in the magnetic nozzle, many orders of magnitude larger than typical laboratory double layer structures. The background plasma density and neutral argon pressure were 10{sup 15} m{sup -3} and 2 x 10{sup -5} Torr, respectively, in a 150 m{sup 3} vacuum chamber during operation of the helicon plasma source. The agreement between the measured plasma potential and plasma potential that was calculated from an ambipolar ion acceleration analysis over the bulk of the axial distance where the potential drop was located is a strong confirmation of the ambipolar acceleration process.

  15. Plasma-induced field emission study of carbon nanotube cathode

    Directory of Open Access Journals (Sweden)

    Yi Shen

    2011-10-01

    Full Text Available An investigation on the plasma-induced field emission (PFE properties of a large area carbon nanotube (CNT cathode on a 2 MeV linear induction accelerator injector is presented. Experimental results show that the cathode is able to emit intense electron beams. Intense electron beams of 14.9–127.8  A/cm^{2} are obtained from the cathode. The CNT cathode desorbs gases from the CNTs during the PFE process. The fast cathode plasma expansion affects the diode perveance. The amount of outgassing is estimated to be 0.06–0.49  Pa·L, and the ratio of outgassing and electron are roughly calculated to be within the range of 170–350 atoms per electron. The effect of the outgassing is analyzed, and the outgassing mass spectrum of the CNT cathode has been studied during the PFE. There is a significant desorption of CO_{2}, N_{2}(CO, and H_{2} gases, which plays an important role during the PFE process. All the experiments demonstrate that the outgassing plays an important role in the formation of the cathode plasma. Moreover, the characteristic turn-on time of the CNT cathode was measured to be 39 ns.

  16. Features of electron-phonon interactions in nanotubes with chiral symmetry in magnetic field

    CERN Document Server

    Kibis, O V

    2001-01-01

    Interaction of the electrons with acoustic phonons in the nanotube with chiral symmetry by availability of the magnetic field, parallel to the nanotube axis, is considered. It is shown that the electron energy spectrum is asymmetric relative to the electron wave vector inversion and for that reason the electron-phonon interaction appears to be different for similar phonons with mutually contrary directions of the wave vector. This phenomenon leads to origination of the electromotive force by the spatially uniform electron gas heating and to appearance of the quadrupole component in the nanotube volt-ampere characteristics

  17. Reconfigurable Complementary Logic Circuits with Ambipolar Organic Transistors.

    Science.gov (United States)

    Yoo, Hocheon; Ghittorelli, Matteo; Smits, Edsger C P; Gelinck, Gerwin H; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

    2016-10-20

    Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors. Nevertheless, the experimental demonstration of ambipolar organic complementary circuits is limited to inverters. The control of the transistor polarity is crucial for proper circuit operation. Novel gating techniques enable to control the transistor polarity but result in dramatically reduced performances. Here we show high-performance non-planar ambipolar organic transistors with electrical control of the polarity and orders of magnitude higher performances with respect to state-of-art split-gate ambipolar transistors. Electrically reconfigurable complementary logic gates based on ambipolar organic transistors are experimentally demonstrated, thus opening up new opportunities for ambipolar organic complementary electronics.

  18. Carbon nanotubes field-effect transistor for rapid detection of DHA

    International Nuclear Information System (INIS)

    Nguyen Thi Thuy; Nguyen Duc Chien; Mai Anh Tuan

    2012-01-01

    This paper presents the development of DNA sensor based on a network carbon nanotubes field effect transistor (CNTFETs) for Escherichia coli bacteria detection. The DNA sequences were immobilized on single-walled carbon nanotubes of transistor CNTFETs by using absorption. The hybridization of the DNA probe sequences and complementary DNA strands was detected by electrical conductance change from the electron doping by DNA hybridization directly on the carbon nanotubes leading to the change in the metal-CNTs barrier energy through the modulation of the electrode work function of carbon nanotubes field effect transistor. The results showed that the response time of DNA sensor was approximately 1 min and the sensitivity of DNA sensor was at 0.565 μA/nM; the detection limit of the sensor was about 1 pM of E. coli bacteria sample. (author)

  19. Field-Flow Fractionation of Carbon Nanotubes and Related Materials

    Energy Technology Data Exchange (ETDEWEB)

    John P. Selegue

    2011-11-17

    During the grant period, we carried out FFF studies of carbonaceous soot, single-walled and multi-walled carbon nanotubes, carbon nano-onions and polyoxometallates. FFF alone does not provide enough information to fully characterize samples, so our suite of characterization techniques grew to include light scattering (especially Photon Correlation Spectroscopy), scanning and transmission electron microscopy, thermogravimetric analysis and spectroscopic methods. We developed convenient techniques to deposit and examine minute FFF fractions by electron microscopy. In collaboration with Arthur Cammers (University of Kentucky), we used Flow Field-Flow Fractionation (Fl-FFF) to monitor the solution-phase growth of keplerates, a class of polyoxometallate (POM) nanoparticles. We monitored the evolution of Mo-POM nanostructures over the course of weeks by by using flow field-flow fractionation and corroborated the nanoparticle structures by using transmission electron microscopy (TEM). Total molybdenum in the solution and precipitate phases was monitored by using inductively coupled plasma analyses, and total Mo-POM concentration by following the UV-visible spectra of the solution phase. We observe crystallization-driven formation of (Mo132) keplerate and solution phase-driven evolution of structurally related nanoscopic species (3-60 nm). FFF analyses of other classes of materials were less successful. Attempts to analyze platelets of layered materials, including exfoliated graphite (graphene) and TaS2 and MoS2, were disappointing. We were not able to optimize flow conditions for the layered materials. The metal sulfides react with the aqueous carrier liquid and settle out of suspension quickly because of their high density.

  20. High performance bulk metallic glass/carbon nanotube composite cathodes for electron field emission

    International Nuclear Information System (INIS)

    Hojati-Talemi, Pejman; Gibson, Mark A.; East, Daniel; Simon, George P.

    2011-01-01

    We report the preparation of new nanocomposites based on a combination of bulk metallic glass and carbon nanotubes for electron field emission applications. The use of bulk metallic glass as the matrix ensures high electrical and thermal conductivity, high thermal stability, and ease of processing, whilst the well dispersed carbon nanotubes act as highly efficient electron emitters. These advantages, alongside excellent electron emission properties, make these composites one of the best reported options for electron emission applications to date.

  1. High performance bulk metallic glass/carbon nanotube composite cathodes for electron field emission

    Energy Technology Data Exchange (ETDEWEB)

    Hojati-Talemi, Pejman [Department of Materials Engineering, Monash University, Clayton, Vic 3800 (Australia); Mawson Institute, University of South Australia, Mawson Lakes, SA 5095 (Australia); Gibson, Mark A. [Process Science and Engineering, Commonwealth Scientific and Industrial Research Organisation, Clayton, Vic 3168 (Australia); East, Daniel; Simon, George P. [Department of Materials Engineering, Monash University, Clayton, Vic 3800 (Australia)

    2011-11-07

    We report the preparation of new nanocomposites based on a combination of bulk metallic glass and carbon nanotubes for electron field emission applications. The use of bulk metallic glass as the matrix ensures high electrical and thermal conductivity, high thermal stability, and ease of processing, whilst the well dispersed carbon nanotubes act as highly efficient electron emitters. These advantages, alongside excellent electron emission properties, make these composites one of the best reported options for electron emission applications to date.

  2. Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal, E-mail: zainabh@petronas.com.my [Centre of Innovative Nanostructures and Nanodevices, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, 31750 Tronoh, Perak (Malaysia)

    2014-03-24

    Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

  3. A cyano-terminated dithienyldiketopyrrolopyrrole dimer as a solution processable ambipolar semiconductor under ambient conditions.

    Science.gov (United States)

    Wang, Li; Zhang, Xiaojie; Tian, Hongkun; Lu, Yunfeng; Geng, Yanhou; Wang, Fosong

    2013-12-14

    A cyano-terminated dimer of dithienyldiketopyrrolopyrrole (TDPP), DPP2-CN, is a solution processable ambipolar semiconductor with field-effect hole and electron mobilities of 0.066 and 0.033 cm(2) V(-1) s(-1), respectively, under ambient conditions.

  4. Tuning Optoelectronic Properties of Ambipolar Organic Light-Emitting Transistors Using a Bulk-Heterojunction Approach

    NARCIS (Netherlands)

    Loi, Maria Antonietta; Rost-Bietsch, Constance; Murgia, Mauro; Karg, Siegfried; Riess, Walter; Muccini, Michele

    2006-01-01

    Bulk-heterojunction engineering is demonstrated as an approach to producing ambipolar organic light-emitting field-effect transistors with tunable electrical and optoelectronic characteristics. The electron and hole mobilities, as well as the electroluminescence intensity, can be tuned over a large

  5. Dielectric Response and Born Dynamic Charge of BN Nanotubes from Ab Initio Finite Electric Field Calculations

    Science.gov (United States)

    Guo, Guang-Yu; Ishibashi, Shoji; Tamura, Tomoyuki; Terakura, Kiyoyuki

    2007-03-01

    Since the discovery of carbon nanotubes (CNTs) in 1991 by Iijima, carbon and other nanotubes have attracted considerable interest worldwide because of their unusual properties and also great potentials for technological applications. Though CNTs continue to attract great interest, other nanotubes such as BN nanotubes (BN-NTs) may offer different opportunities that CNTs cannot provide. In this contribution, we present the results of our recent systematic ab initio calculations of the static dielectric constant, electric polarizability, Born dynamical charge, electrostriction coefficient and piezoelectric constant of BN-NTs using the latest crystalline finite electric field theory [1]. [1] I. Souza, J. Iniguez, and D. Vanderbilt, Phys. Rev. Lett. 89, 117602 (2002); P. Umari and A. Pasquarello, Phys. Rev. Lett. 89, 157602 (2002).

  6. Electron field emission characteristics of graphene/carbon nanotubes hybrid field emitter

    International Nuclear Information System (INIS)

    Chen, Leifeng; He, Hong; Yu, Hua; Cao, Yiqi; Lei, Da; Menggen, QiQiGe; Wu, Chaoxing; Hu, Liqin

    2014-01-01

    The graphene (GP) and multi-walled carbon nanotubes (MCNTs) hybrid nanostructure emitter was constructed by a larger scale electrophoretic deposition (EPD) method. The field emission (FE) performance of the hybrid emitter is greatly improved compared with that of only GP or MCNTs emitter. The low turn-on electric field (EF), the low threshold EF and the reliability FE properties are obtained from the hybrid emitter. The better FE properties result from the improved electrical properties. For further enhancement FE of hybrids, Ag Nanoparticles (NPs) were decorated on the hybrids and FE characteristics were also studied. These studies indicate that we can use the hybrid nanostructure to improve conductivity and contact resistance, which results in enhancement of the FE properties

  7. Field emission from individual multiwalled carbon nanotubes prepared in an electron microscope

    NARCIS (Netherlands)

    de Jonge, N.; van Druten, N.J.

    2003-01-01

    Individual multiwalled carbon nanotube field emitters were prepared in a scanning electron microscope. The angular current density, energy spectra, and the emission stability of the field-emitted electrons were measured. An estimate of the electron source brightness was extracted from the

  8. Controlling the diameters and field emission properties of vertically aligned carbon nanotubes synthesized by thermal chemical vapor deposition

    International Nuclear Information System (INIS)

    Choi, Sung Yool; Kang, Young Il; Cho, Kyoung Ik; Choi, Kyu Seok; Kim, Do Jin

    2001-01-01

    We report here the synthesis of vertically well-aligned carbon nanotubes and the effect of catalytic metal layer on the diameter of grown carbon nanotubes and the field emission characteristics of them, The carbon nanotubes were grown by thermal chemical vapor deposition at temperatures below 900 .deg. C on Fe metal catalytic layer, deposited by sputtering process on a Si substrate and pretreated by heat and NH 3 gas. We found that the thickness of metal layers could be an important parameter in controlling the diameters of carbon nanotubes. With varying the thickness of the metal layers the grain sizes of them also vary so that the diameters of the nanotubes could be controlled. Field emission measurement has been made on the carbon nanotube field emitters at room temperature in a vacuum chamber below 10 -6 Torr. Our vertically aligned carbon nanotube field emitter of the smallest diameter emits a current density about 10 mA/cm 2 at 7.2 V/μm. The field emission property of the carbon nanotubes shows strong dependence on the nanotube diameters as expected

  9. Effects of potassium hydroxide post-treatments on the field-emission properties of thermal chemical vapor deposited carbon nanotubes.

    Science.gov (United States)

    Lee, Li-Ying; Lee, Shih-Fong; Chang, Yung-Ping; Hsiao, Wei-Shao

    2011-12-01

    In this study, a simple potassium hydroxide treatment was applied to functionalize the surface and to modify the structure of multi-walled carbon nanotubes grown on silicon substrates by thermal chemical vapor deposition. Scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and energy dispersive spectrometry were employed to investigate the mechanism causing the modified field-emission properties of carbon nanotubes. From our experimental data, the emitted currents of carbon nanotubes after potassium hydroxide treatment are enhanced by more than one order of magnitude compared with those of untreated carbon nanotubes. The emitted current density of carbon nanotubes increases from 0.44 mA/cm2 to 7.92 mA/cm2 after 30 minutes KOH treatment. This technique provides a simple, economical, and effective way to enhance the field-emission properties of carbon nanotubes.

  10. Growth of vertically aligned arrays of carbon nanotubes for high field emission

    International Nuclear Information System (INIS)

    Kim, D.; Lim, S.H.; Guilley, A.J.; Cojocaru, C.S.; Bouree, J.E.; Vila, L.; Ryu, J.H.; Park, K.C.; Jang, J.

    2008-01-01

    Vertically aligned multi-walled carbon nanotubes have been grown on Ni-coated silicon substrates, by using either direct current diode or triode plasma-enhanced chemical vapor deposition at low temperature (around 620 deg. C). Acetylene gas has been used as the carbon source while ammonia and hydrogen have been used for etching. However densely packed (∼ 10 9 cm -2 ) CNTs were obtained when the pressure was ∼ 100 Pa. The alignment of nanotubes is a necessary, but not a sufficient condition in order to get an efficient electron emission: the growth of nanotubes should be controlled along regular arrays, in order to minimize the electrostatic interactions between them. So a three dimensional numerical simulation has been developed to calculate the local electric field in the vicinity of the tips for a finite square array of nanotubes and thus to calculate the maximum of the electron emission current density as a function of the spacing between nanotubes. Finally the triode plasma-enhanced process combined with pre-patterned catalyst films (using different lithography techniques) has been chosen in order to grow regular arrays of aligned CNTs with different pitches in the micrometer range. The comparison between the experimental and the simulation data permits to define the most efficient CNT-based electron field emitters

  11. Enhancement of electron field emission of vertically aligned carbon nanotubes by nitrogen plasma treatment

    Energy Technology Data Exchange (ETDEWEB)

    Wang, B.B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054 (China); Plasma Nanoscience Centre Australia (PNCA), CSIRO Materials Science and Engineering, P.O. Box 218, Lindfield, NSW 2070 (Australia); Cheng, Q.J. [Plasma Nanoscience Centre Australia (PNCA), CSIRO Materials Science and Engineering, P.O. Box 218, Lindfield, NSW 2070 (Australia); Plasma Nanoscience, School of Physics, University of Sydney, Sydney, NSW 2006 (Australia); Chen, X. [College of Materials Science and Engineering, Chongqing University, Chongqing 400044 (China); Ostrikov, K., E-mail: kostya.ostrikov@csiro.au [Plasma Nanoscience Centre Australia (PNCA), CSIRO Materials Science and Engineering, P.O. Box 218, Lindfield, NSW 2070 (Australia); Plasma Nanoscience, School of Physics, University of Sydney, Sydney, NSW 2006 (Australia)

    2011-09-22

    Highlights: > A new and custom-designed bias-enhanced hot-filament chemical vapor deposition system is developed to synthesize vertically aligned carbon nanotubes. > The carbon nanotubes are later treated with nitrogen plasmas. > The electron field emission characteristics of the carbon nanotubes are significantly improved after the nitrogen plasma treatment. > A new physical mechanism is proposed to interpret the improvement of the field emission characteristics. - Abstract: The electron field emission (EFE) characteristics from vertically aligned carbon nanotubes (VACNTs) without and with treatment by the nitrogen plasma are investigated. The VACNTs with the plasma treatment showed a significant improvement in the EFE property compared to the untreated VACNTs. The morphological, structural, and compositional properties of the VACNTs are extensively examined by scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and energy dispersive X-ray spectroscopy. It is shown that the significant EFE improvement of the VACNTs after the nitrogen plasma treatment is closely related to the variation of the morphological and structural properties of the VACNTs. The high current density (299.6 {mu}A/cm{sup 2}) achieved at a low applied field (3.50 V/{mu}m) suggests that the VACNTs after nitrogen plasma treatment can serve as effective electron field emission sources for numerous applications.

  12. Enhancement of electron field emission of vertically aligned carbon nanotubes by nitrogen plasma treatment

    International Nuclear Information System (INIS)

    Wang, B.B.; Cheng, Q.J.; Chen, X.; Ostrikov, K.

    2011-01-01

    Highlights: → A new and custom-designed bias-enhanced hot-filament chemical vapor deposition system is developed to synthesize vertically aligned carbon nanotubes. → The carbon nanotubes are later treated with nitrogen plasmas. → The electron field emission characteristics of the carbon nanotubes are significantly improved after the nitrogen plasma treatment. → A new physical mechanism is proposed to interpret the improvement of the field emission characteristics. - Abstract: The electron field emission (EFE) characteristics from vertically aligned carbon nanotubes (VACNTs) without and with treatment by the nitrogen plasma are investigated. The VACNTs with the plasma treatment showed a significant improvement in the EFE property compared to the untreated VACNTs. The morphological, structural, and compositional properties of the VACNTs are extensively examined by scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and energy dispersive X-ray spectroscopy. It is shown that the significant EFE improvement of the VACNTs after the nitrogen plasma treatment is closely related to the variation of the morphological and structural properties of the VACNTs. The high current density (299.6 μA/cm 2 ) achieved at a low applied field (3.50 V/μm) suggests that the VACNTs after nitrogen plasma treatment can serve as effective electron field emission sources for numerous applications.

  13. Effect of vacancy defect on electrical properties of chiral single-walled carbon nanotube under external electrical field

    International Nuclear Information System (INIS)

    Luo Yu-Pin; Tien Li-Gan; Tsai Chuen-Horng; Lee Ming-Hsien; Li Feng-Yin

    2011-01-01

    Ab initio calculations demonstrated that the energy gap modulation of a chiral carbon nanotube with mono-vacancy defect can be achieved by applying a transverse electric field. The bandstructure of this defective carbon nanotube varying due to the external electric field is distinctly different from those of the perfect nanotube and defective zigzag nanotube. This variation in bandstructure strongly depends on not only the chirality of the nanotube and also the applied direction of the transverse electric field. A mechanism is proposed to explain the response of the local energy gap between the valence band maximum state and the local gap state under external electric field. Several potential applications of these phenomena are discussed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. Carbon nanotubes in an inhomogeneous transverse magnetic field: exactly solvable model

    Czech Academy of Sciences Publication Activity Database

    Jakubský, Vít; Kuru, S.; Negro, J.

    2014-01-01

    Roč. 47, č. 11 (2014), s. 115307 ISSN 1751-8113 R&D Projects: GA AV ČR GPP203/11/P038 Institutional support: RVO:61389005 Keywords : carbon nanotubes * dirac equation * magnetic field * finite-gap system Subject RIV: BE - Theoretical Physics Impact factor: 1.583, year: 2014

  15. Calibration method for a carbon nanotube field-effect transistor biosensor

    International Nuclear Information System (INIS)

    Abe, Masuhiro; Murata, Katsuyuki; Ataka, Tatsuaki; Matsumoto, Kazuhiko

    2008-01-01

    An easy calibration method based on the Langmuir adsorption theory is proposed for a carbon nanotube field-effect transistor (NTFET) biosensor. This method was applied to three NTFET biosensors that had approximately the same structure but exhibited different characteristics. After calibration, their experimentally determined characteristics exhibited a good agreement with the calibration curve. The reason why the observed characteristics of these NTFET biosensors differed among the devices was that the carbon nanotube (CNT) that formed the channel was not uniform. Although the controlled growth of a CNT is difficult, it is shown that an NTFET biosensor can be easy calibrated using the proposed calibration method, regardless of the CNT channel structures

  16. Si/Ge hetero-structure nanotube tunnel field effect transistor

    KAUST Repository

    Hanna, A. N.

    2015-01-07

    We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at Vdd-=-1-V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60-mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when Vdd is scaled down to 0.5-V.

  17. Si/Ge hetero-structure nanotube tunnel field effect transistor

    KAUST Repository

    Hanna, A. N.; Hussain, Muhammad Mustafa

    2015-01-01

    We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at Vdd-=-1-V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60-mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when Vdd is scaled down to 0.5-V.

  18. Plasma-induced field emission and plasma expansion of carbon nanotube cathodes

    International Nuclear Information System (INIS)

    Liao Qingliang; Zhang Yue; Qi Junjie; Huang Yunhua; Xia Liansheng; Gao Zhanjun; Gu Yousong

    2007-01-01

    High intensity electron emission cathodes based on carbon nanotube films have been successfully fabricated. An investigation of the explosive field emission properties of the carbon nanotube cathode in a double-pulse mode was presented and a high emission current density of 245 A cm -2 was obtained. The formation of the cathode plasma layer was proved and the production process of the electron beams from the cathode was explained. The time and space resolution of the electron beams flow from the cathode was investigated. The plasma expanded at a velocity of ∼8.17 cm μs -1 towards the anode and influenced on the intensity and distribution of electron beams obviously. The formation of cathode plasma had no preferential position and the local enhancement of electron beams was random. This carbon nanotube cathode appears to be suitable for high-power microwave device applications

  19. Electronic and optical properties of finite carbon nanotubes in an electric field

    International Nuclear Information System (INIS)

    Chen, R B; Lee, C H; Chang, C P; Lin, M F

    2007-01-01

    The effects, caused by the geometric structure and an electric field (E), on the electronic and optical properties of quasi-zero-dimensional finite carbon nanotubes are explored by employing the tight-binding model coupled with curvature effects. Electronic properties (state energies, symmetry of electronic states, energy spacing and state degeneracy) are significantly affected by the magnitude and the direction of the electric field and the geometric structure (radius, length and chirality). The electric field, by lowering the symmetry of finite carbon nanotubes, modifies the electronic properties. Thus, the optical excitation spectra, excited by electric polarization parallel to the nanotube axis, exhibit rich delta-function-like peaks, which reveal the characteristics of the electronic properties. Therefore it follows that geometric structure and E influence the low-energy absorption spectra, i.e. the change of frequency of the first peak, the alternation of the peak height and the production of the new peaks. There are more absorption peaks when E is oriented closer to the cross-section plane. Moreover, the very complicated optical absorption spectra are characteristic for the individual chiral carbon nanotube due to its specific geometric structure. Above all, the predicted absorption spectra and the associated electronic properties could be verified by optical measurements

  20. Design and fabrication of carbon nanotube field-emission cathode with coaxial gate and ballast resistor.

    Science.gov (United States)

    Sun, Yonghai; Yeow, John T W; Jaffray, David A

    2013-10-25

    A low density vertically aligned carbon nanotube-based field-emission cathode with a ballast resistor and coaxial gate is designed and fabricated. The ballast resistor can overcome the non-uniformity of the local field-enhancement factor at the emitter apex. The self-aligned fabrication process of the coaxial gate can avoid the effects of emitter tip misalignment and height non-uniformity. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Electron Gas Dynamic Conductivity Tensor on the Nanotube Surface in Magnetic Field

    Directory of Open Access Journals (Sweden)

    A. M. Ermolaev

    2011-01-01

    Full Text Available Kubo formula was derived for the electron gas conductivity tensor on the nanotube surface in longitudinal magnetic field considering spatial and time dispersion. Components of the degenerate and nondegenerate electron gas conductivity tensor were calculated. The study has showed that under high electron density, the conductivity undergoes oscillations of de Haas-van Alphen and Aharonov-Bohm types with the density of electrons and magnetic field changes.

  2. Ambipolar organic tri-gate transistor for low-power complementary electronics

    NARCIS (Netherlands)

    Torricelli, F.; Ghittorelli, M.; Smits, E.C.P.; Roelofs, C.; Janssen, R.A.J.; Gelinck, G.H.; Kovács-Vajna, Z.M.; Cantatore, E.

    2016-01-01

    Ambipolar transistors typically suffer from large off-current inherently due to ambipolar conduction. Using a tri-gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode. In unipolar mode, symmetric characteristics

  3. Effect of Ambipolar Plasma Flow on the Penetration of Resonant Magnetic Perturbations in a Quasi-axisymmetric Stellarator

    International Nuclear Information System (INIS)

    Reiman, A.; Zarnstorff, M.; Mikkelsen, D.; Owen, L.; Mynick, H.; Hudson, S.; Monticello, D.

    2005-01-01

    A reference equilibrium for the U.S. National Compact Stellarator Experiment is predicted to be sufficiently close to quasi-symmetry to allow the plasma to flow in the toroidal direction with little viscous damping, yet to have sufficiently large deviations from quasi-symmetry that nonambipolarity significantly affects the physics of the shielding of resonant magnetic perturbations by plasma flow. The unperturbed velocity profile is modified by the presence of an ambipolar potential, which produces a broad velocity profile. In the presence of a resonant magnetic field perturbation, nonambipolar transport produces a radial current, and the resulting j x B force resists departures from the ambipolar velocity and enhances the shielding

  4. Thiophene-fused tetracene diimide with low band gap and ambipolar behavior

    KAUST Repository

    Ye, Qun

    2011-11-18

    The first tetracene diimide derivative fused with four thiophene rings, TT-TDI, was synthesized by an FeCl3 mediated oxidative cyclodehydrogenation reaction. TT-TDI exhibited a low band gap of 1.52 eV and amphoteric redox behavior. TT-TDI also showed a liquid crystalline property and ambipolar charge transport in thin film field-effect transistors. © 2011 American Chemical Society.

  5. Thiophene-fused tetracene diimide with low band gap and ambipolar behavior

    KAUST Repository

    Ye, Qun; Chang, Jingjing; Huang, Kuo-Wei; Chi, Chunyan

    2011-01-01

    The first tetracene diimide derivative fused with four thiophene rings, TT-TDI, was synthesized by an FeCl3 mediated oxidative cyclodehydrogenation reaction. TT-TDI exhibited a low band gap of 1.52 eV and amphoteric redox behavior. TT-TDI also showed a liquid crystalline property and ambipolar charge transport in thin film field-effect transistors. © 2011 American Chemical Society.

  6. Field emission from optimized structure of carbon nanotube field emitter array

    International Nuclear Information System (INIS)

    Chouhan, V.; Noguchi, T.; Kato, S.

    2016-01-01

    The authors report a detail study on the emission properties of field emitter array (FEA) of micro-circular emitters of multiwall carbon nanotubes (CNTs). The FEAs were fabricated on patterned substrates prepared with an array of circular titanium (Ti) islands on titanium nitride coated tantalum substrates. CNTs were rooted into these Ti islands to prepare an array of circular emitters. The circular emitters were prepared in different diameters and pitches in order to optimize their structure for acquiring a high emission current. The pitch was varied from 0 to 600 μm, while a diameter of circular emitters was kept constant to be 50 μm in order to optimize a pitch. For diameter optimization, a diameter was changed from 50 to 200 μm while keeping a constant edge-to-edge distance of 150 μm between the circular emitters. The FEA with a diameter of 50 μm and a pitch of 120 μm was found to be the best to achieve an emission current of 47 mA corresponding to an effective current density of 30.5 A/cm"2 at 7 V/μm. The excellent emission current was attributed to good quality of CNT rooting into the substrate and optimized FEA structure, which provided a high electric field on a whole circular emitter of 50 μm and the best combination of the strong edge effect and CNT coverage. The experimental results were confirmed with computer simulation.

  7. Field emission from optimized structure of carbon nanotube field emitter array

    Energy Technology Data Exchange (ETDEWEB)

    Chouhan, V., E-mail: vchouhan@post.kek.jp, E-mail: vijaychouhan84@gmail.com [School of High Energy Accelerator, The Graduate University for Advanced Studies, Tsukuba 305-0801 (Japan); Noguchi, T. [High Energy Accelerator Research Organization (KEK), Tsukuba 305-0801 (Japan); Kato, S. [School of High Energy Accelerator, The Graduate University for Advanced Studies, Tsukuba 305-0801 (Japan); High Energy Accelerator Research Organization (KEK), Tsukuba 305-0801 (Japan)

    2016-04-07

    The authors report a detail study on the emission properties of field emitter array (FEA) of micro-circular emitters of multiwall carbon nanotubes (CNTs). The FEAs were fabricated on patterned substrates prepared with an array of circular titanium (Ti) islands on titanium nitride coated tantalum substrates. CNTs were rooted into these Ti islands to prepare an array of circular emitters. The circular emitters were prepared in different diameters and pitches in order to optimize their structure for acquiring a high emission current. The pitch was varied from 0 to 600 μm, while a diameter of circular emitters was kept constant to be 50 μm in order to optimize a pitch. For diameter optimization, a diameter was changed from 50 to 200 μm while keeping a constant edge-to-edge distance of 150 μm between the circular emitters. The FEA with a diameter of 50 μm and a pitch of 120 μm was found to be the best to achieve an emission current of 47 mA corresponding to an effective current density of 30.5 A/cm{sup 2} at 7 V/μm. The excellent emission current was attributed to good quality of CNT rooting into the substrate and optimized FEA structure, which provided a high electric field on a whole circular emitter of 50 μm and the best combination of the strong edge effect and CNT coverage. The experimental results were confirmed with computer simulation.

  8. Transport properties of finite carbon nanotubes under electric and magnetic fields

    International Nuclear Information System (INIS)

    Li, T S; Lin, M F

    2006-01-01

    Electronic and transport properties of finite carbon nanotubes subject to the influences of a transverse electric field and a magnetic field with varying polar angles are studied by the tight-binding model. The external fields will modify the state energies, destroy the state degeneracy, and modulate the energy gap. Both the state energy and the energy gap exhibit rich dependence on the field strength, the magnetic field direction, and the types of carbon nanotubes. The semiconductor-metal transition would be allowed for certain field strengths and magnetic field directions. The variations of state energies with the external fields will also be reflected in the electrical and thermal conductance. The number, the heights, and the positions of the conductance peaks are strongly dependent on the external fields. The heights of the electrical and thermal conductance peaks display a quantized behaviour, while that of the Peltier coefficient does not. Finally, it is found that the validity of the Wiedemann-Franz law depends upon the temperature, the field strength, the electronic structure, and the chemical potential

  9. Interaction of Ambipolar Plasma Flow with Magnetic Islands in a Quasi-axisymmetric Stellarator

    International Nuclear Information System (INIS)

    Reiman, A.; Zarnstorff, M.; Mikkelsen, D.; Owen, L.; Mynick, H.; Hudson, S.; Monticello, D.

    2004-01-01

    A reference equilibrium for the U.S. National Compact Stellarator Experiment is predicted to be sufficiently close to quasi-symmetry to allow the plasma to flow in the toroidal direction with little viscous damping, yet to have sufficiently large deviations from quasi-symmetry that nonambipolarity significantly affects the physics of the shielding of resonant magnetic perturbations by plasma flow. The unperturbed velocity profile is modified by the presence of an ambipolar potential, which broadens the profile and improves the shielding near the plasma edge. In the presence of a resonant magnetic field perturbation, nonambipolar transport produces a radial current, and the resulting jxB force resists departures from the ambipolar velocity and enhances the shielding

  10. Interaction of ambipolar plasma flow with magnetic islands in a quasi-axisymmetric stellarator

    International Nuclear Information System (INIS)

    Reiman, A.; Zarnstorff, M.; Mikkelsen, D.; Mynick, H.; Hudson, S.; Monticello, D.; Owen, L.

    2005-01-01

    A reference equilibrium for the US National Compact Stellarator Experiment is predicted to be sufficiently close to quasi-symmetry to allow the plasma to flow in the toroidal direction with little viscous damping, yet to have sufficiently large deviations from quasi-symmetry that nonambipolarity significantly affects the physics of the shielding of resonant magnetic perturbations by plasma flow. The unperturbed velocity profile is modified by the presence of an ambipolar potential, which broadens the profile and improves the shielding near the plasma edge. In the presence of a resonant magnetic field perturbation, nonambipolar transport produces a radial current, and the resulting jxB force resists departures from the ambipolar velocity and enhances the shielding. (author)

  11. Performance of Solution Processed Carbon Nanotube Field Effect Transistors with Graphene Electrodes

    OpenAIRE

    Gangavarapu, P R Yasasvi; Lokesh, Punith Chikkahalli; Bhat, K N; Naik, A K

    2016-01-01

    This work evaluates the performance of carbon nanotube field effect transistors (CNTFET) using few layer graphene as the contact electrode material. We present the experimental results obtained on the barrier height at CNT graphene junction using temperature dependent IV measurements. The estimated barrier height in our devices for both holes and electrons is close to zero or slightly negative indicating the Ohmic contact of graphene with the valence and conduction bands of CNTs. In addition,...

  12. Effectively Improved Field Emission Properties of Multiwalled Carbon Nanotubes/Graphenes Composite Field Emitter by Covering on the Si Pyramidal Structure

    DEFF Research Database (Denmark)

    Chen, Leifeng; Yu, Hua; Zhong, Jiasong

    2015-01-01

    The composite nanostructure emitter of multiwalled carbon nanotubes and graphenes was deposited on pyramidal silicon substrate by the simple larger scale electrophoretic deposition process. The field emission (FE) properties of the composite/pyramidal Si device were greatly improved compared...

  13. Stationary scanning x-ray source based on carbon nanotube field emitters

    International Nuclear Information System (INIS)

    Zhang, J.; Yang, G.; Cheng, Y.; Gao, B.; Qiu, Q.; Lee, Y.Z.; Lu, J.P.; Zhou, O.

    2005-01-01

    We report a field emission x-ray source that can generate a scanning x-ray beam to image an object from multiple projection angles without mechanical motion. The key component of the device is a gated carbon nanotube field emission cathode with an array of electron emitting pixels that are individually addressable via a metal-oxide-semiconductor field effect transistor-based electronic circuit. The characteristics of this x-ray source are measured and its imaging capability is demonstrated. The device can potentially lead to a fast data acquisition rate for laminography and tomosynthesis with a simplified experimental setup

  14. Modeling ambipolar potential formation due to ICRF heating effects on electrons

    International Nuclear Information System (INIS)

    Johnson, J.W.; Callen, J.D.; Hershkowitz, N.

    1985-08-01

    A mechanism for the potential bump observed near the region of ICRF heating in the endplugs of the Phaedrus tandem mirror experiment is investigated by numerical simulation of electron orbits in a simple mirror geometry. Given initial magnetic and ambipolar potential wells that trap the electrons, the ''near field'' parallel electric field E-tilde/sub z/e/sup -iωt/, which is localized near and due to the ICRF heating, tends to eject electrons from the region where E-tilde/sub z/ is nonzero. This depletion of the local electron population causes a local increase in the ambipolar potential. The rate at which the electrons are ejected, (dn/dt), is calculated from the electron orbit computation for a given potential well depth. The rate at which passing particles ''fill in'' the potential well can also be calculated. An estimate of how large the bump in the ambipolar potential becomes is obtained by finding the well depth at which (dn/dt) approximately equals the ''filling'' rate. For Phaedrus parameters (n 0 approx. = 4.0 x 10 12 cm -3 , T/sub e/ = 20 eV, E-tilde/sub z/ approx. = 1.0 V/cm) the electron pumping rate balances the ''filling'' rate at a potential well depth of approximately 40 V, consistent with experimental results

  15. Ambipolar organic heterojunction transistors with various p-type semiconductors

    International Nuclear Information System (INIS)

    Shi Jianwu; Wang Haibo; Song De; Tian Hongkun; Geng Yanhou; Yan Donghang

    2008-01-01

    Ambipolar transport has been realized in organic heterojunction transistors with metal phthalocyanines, phenanthrene-based conjugated oligomers as the first semiconductors and copper-hexadecafluoro-phthalocyanine as the second semiconductor. The electron and hole mobilities of ambipolar devices with rod-like molecules were comparable to the corresponding single component devices, while the carrier mobility of ambipolar devices with disk-like molecules was much lower than the corresponding single component devices. The much difference of their device performance was attributed to the roughness of the first semiconductor films, which was original from their distinct growth habits. The flat and continuous films for the first semiconductors layer can lead to a smooth heterojunction interface, and obtained a high device performance for ambipolar organic heterojunction transistors

  16. Performance optimization of MOS-like carbon nanotube-FETs with realistic source/drain contacts based on electrostatic doping

    Energy Technology Data Exchange (ETDEWEB)

    Zhou Hailiang; Zhang Minxuan [School of Computer, National University of Defense Technology, Changsha 410073 (China); Hao Yue, E-mail: hlzhou@nudt.edu.cn [School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2010-12-15

    Due to carrier band-to-band-tunneling (BTBT) through channel-source/drain contacts, conventional MOS-like Carbon Nanotube Field Effect Transistors (C-CNFETs) suffer from ambipolar conductance, which deteriorates the device performance greatly. In order to reduce such ambipolar behavior, a novel device structure based on electrostatic doping is proposed and all kinds of source/drain contacting conditions are considered in this paper. The non-equilibrium Green's function (NEGF) formalism based simulation results show that, with proper choice of tuning voltage, such electrostatic doping strategy can not only reduce the ambipolar conductance but also improve the sub-threshold performance, even with source/drain contacts being of Schottky type. And these are both quite desirable in circuit design to reduce the system power and improve the frequency as well. Further study reveals that the performance of the proposed design depends strongly on the choice of tuning voltage value, which should be paid much attention to obtain a proper trade-off between power and speed in application. (semiconductor devices)

  17. Performance optimization of MOS-like carbon nanotube-FETs with realistic source/drain contacts based on electrostatic doping

    International Nuclear Information System (INIS)

    Zhou Hailiang; Zhang Minxuan; Hao Yue

    2010-01-01

    Due to carrier band-to-band-tunneling (BTBT) through channel-source/drain contacts, conventional MOS-like Carbon Nanotube Field Effect Transistors (C-CNFETs) suffer from ambipolar conductance, which deteriorates the device performance greatly. In order to reduce such ambipolar behavior, a novel device structure based on electrostatic doping is proposed and all kinds of source/drain contacting conditions are considered in this paper. The non-equilibrium Green's function (NEGF) formalism based simulation results show that, with proper choice of tuning voltage, such electrostatic doping strategy can not only reduce the ambipolar conductance but also improve the sub-threshold performance, even with source/drain contacts being of Schottky type. And these are both quite desirable in circuit design to reduce the system power and improve the frequency as well. Further study reveals that the performance of the proposed design depends strongly on the choice of tuning voltage value, which should be paid much attention to obtain a proper trade-off between power and speed in application. (semiconductor devices)

  18. Study of gaseous interactions in carbon nanotube field-effect transistors through selective Si3N4 passivation

    International Nuclear Information System (INIS)

    Peng Ning; Zhang Qing; Tan, O K; Marzari, Nicola

    2008-01-01

    Carbon nanotube field-effect transistors with Si 3 N 4 passivated source and drain contacts and exposed carbon nanotube channel show n-type characteristics in air. In contrast, by passivating only the source contact, a diode-like behavior with a maximum current rectification ratio of 4.6 x 10 3 is observed. The rectifying characteristic vanishes in a vacuum but recovers once the devices are exposed to air. From our experiments, key parameters, such as critical gas pressure, adsorption energy of oxygen molecules and the contact barrier height modulation, can be obtained for studying the gaseous interaction in the carbon nanotube devices.

  19. Outstanding field emission properties of wet-processed titanium dioxide coated carbon nanotube based field emission devices

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Jinzhuo; Ou-Yang, Wei, E-mail: ouyangwei@phy.ecnu.edu.cn; Chen, Xiaohong; Guo, Pingsheng; Piao, Xianqing; Sun, Zhuo [Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, 3663 North Zhongshan Road, Shanghai 200062 (China); Xu, Peng; Wang, Miao [Department of Physics, Zhejiang University, 38 ZheDa Road, Hangzhou 310027 (China); Li, Jun [Department of Electronic Science and Technology, Tongji University, 4800 Caoan Road, Shanghai 201804 (China)

    2015-02-16

    Field emission devices using a wet-processed composite cathode of carbon nanotube films coated with titanium dioxide exhibit outstanding field emission characteristics, including ultralow turn on field of 0.383 V μm{sup −1} and threshold field of 0.657 V μm{sup −1} corresponding with a very high field enhancement factor of 20 000, exceptional current stability, and excellent emission uniformity. The improved field emission properties are attributed to the enhanced edge effect simultaneously with the reduced screening effect, and the lowered work function of the composite cathode. In addition, the highly stable electron emission is found due to the presence of titanium dioxide nanoparticles on the carbon nanotubes, which prohibits the cathode from the influence of ions and free radical created in the emission process as well as residual oxygen gas in the device. The high-performance solution-processed composite cathode demonstrates great potential application in vacuum electronic devices.

  20. MAGNETIC BRAKING AND PROTOSTELLAR DISK FORMATION: AMBIPOLAR DIFFUSION

    International Nuclear Information System (INIS)

    Mellon, Richard R.; Li Zhiyun

    2009-01-01

    It is established that the formation of rotationally supported disks during the main accretion phase of star formation is suppressed by a moderately strong magnetic field in the ideal MHD limit. Nonideal MHD effects are expected to weaken the magnetic braking, perhaps allowing the disk to reappear. We concentrate on one such effect, ambipolar diffusion, which enables the field lines to slip relative to the bulk neutral matter. We find that the slippage does not sufficiently weaken the braking to allow rotationally supported disks to form for realistic levels of cloud magnetization and cosmic ray ionization rate; in some cases, the magnetic braking is even enhanced. Only in dense cores with both exceptionally weak fields and unreasonably low ionization rate do such disks start to form in our simulations. We conclude that additional processes, such as Ohmic dissipation or Hall effect, are needed to enable disk formation. Alternatively, the disk may form at late times when the massive envelope that anchors the magnetic brake is dissipated, perhaps by a protostellar wind.

  1. A new electrode design for ambipolar injection in organic semiconductors.

    Science.gov (United States)

    Kanagasekaran, Thangavel; Shimotani, Hidekazu; Shimizu, Ryota; Hitosugi, Taro; Tanigaki, Katsumi

    2017-10-17

    Organic semiconductors have attracted much attention for low-cost, flexible and human-friendly optoelectronics. However, achieving high electron-injection efficiency is difficult from air-stable electrodes and cannot be equivalent to that of holes. Here, we present a novel concept of electrode composed of a bilayer of tetratetracontane (TTC) and polycrystalline organic semiconductors (pc-OSC) covered by a metal layer. Field-effect transistors of single-crystal organic semiconductors with the new electrodes of M/pc-OSC/TTC (M: Ca or Au) show both highly efficient electron and hole injection. Contact resistance for electron injection from Au/pc-OSC/TTC and hole injection from Ca/pc-OSC/TTC are comparable to those for electron injection from Ca and hole injection from Au, respectively. Furthermore, the highest field-effect mobilities of holes (22 cm 2  V -1  s -1 ) and electrons (5.0 cm 2  V -1  s -1 ) are observed in rubrene among field-effect transistors with electrodes so far proposed by employing Ca/pc-OSC/TTC and Au/pc-OSC/TTC electrodes for electron and hole injection, respectively.One of technological challenges building organic electronics is efficient injection of electrons at metal-semiconductor interfaces compared to that of holes. The authors show an air-stable electrode design with induced gap states, which support Fermi level pinning and thus ambipolar carrier injection.

  2. In situ measurements and transmission electron microscopy of carbon nanotube field-effect transistors

    International Nuclear Information System (INIS)

    Kim, Taekyung; Kim, Seongwon; Olson, Eric; Zuo Jianmin

    2008-01-01

    We present the design and operation of a transmission electron microscopy (TEM)-compatible carbon nanotube (CNT) field-effect transistor (FET). The device is configured with microfabricated slits, which allows direct observation of CNTs in a FET using TEM and measurement of electrical transport while inside the TEM. As demonstrations of the device architecture, two examples are presented. The first example is an in situ electrical transport measurement of a bundle of carbon nanotubes. The second example is a study of electron beam radiation effect on CNT bundles using a 200 keV electron beam. In situ electrical transport measurement during the beam irradiation shows a signature of wall- or tube-breakdown. Stepwise current drops were observed when a high intensity electron beam was used to cut individual CNT bundles in a device with multiple bundles

  3. Are Nanotube Architectures More Advantageous Than Nanowire Architectures For Field Effect Transistors?

    KAUST Repository

    Fahad, Hossain M.

    2012-06-27

    Decade long research in 1D nanowire field effect transistors (FET) shows although it has ultra-low off-state leakage current and a single device uses a very small area, its drive current generation per device is extremely low. Thus it requires arrays of nanowires to be integrated together to achieve appreciable amount of current necessary for high performance computation causing an area penalty and compromised functionality. Here we show that a FET with a nanotube architecture and core-shell gate stacks is capable of achieving the desirable leakage characteristics of the nanowire FET while generating a much larger drive current with area efficiency. The core-shell gate stacks of silicon nanotube FETs tighten the electrostatic control and enable volume inversion mode operation leading to improved short channel behavior and enhanced performance. Our comparative study is based on semi-classical transport models with quantum confinement effects which offers new opportunity for future generation high performance computation.

  4. Linear optical response of carbon nanotubes under axial magnetic field

    Science.gov (United States)

    Moradian, Rostam; Chegel, Raad; Behzad, Somayeh

    2010-04-01

    We considered single walled carbon naotubes (SWCNTs) as real three dimensional (3D) systems in a cylindrical coordinate. The optical matrix elements and linear susceptibility, χ(ω), in the tight binding approximation in terms of one-dimensional wave vector, kz and subband index, l are calculated. In an external axial magnetic field optical frequency dependence of linear susceptibility are investigated. We found that axial magnetic field has two effects on the imaginary part of the linear susceptibility spectrum, in agreement with experimental results. The first effect is broadening and the second, splitting. Also we found that for all metallic zigzag and armchair SWCNTs, the axial magnetic field leads to the creation of a peak with energy less than 1.5 eV, contrary to what is observed in the absence of a magnetic field.

  5. Transport properties of field effect transistors with randomly networked single walled carbon nanotubes grown by plasma enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Kim, Un Jeong; Park, Wanjun

    2009-01-01

    The transport properties of randomly networked single walled carbon nanotube (SWNT) transistors with different channel lengths of L c = 2-10 μm were investigated. Randomly networked SWNTs were directly grown for the two different densities of ρ ∼ 25 μm -2 and ρ ∼ 50 μm -2 by water plasma enhanced chemical vapour deposition. The field effect transport is governed mainly by formation of the current paths that is related to the nanotube density. On the other hand, the off-state conductivity deviates from linear dependence for both nanotube density and channel length. The field effect mobility of holes is estimated as 4-13 cm 2 V -1 s -1 for the nanotube transistors based on the simple MOS theory. The mobility is increased for the higher density without meaningful dependence on the channel lengths.

  6. Alterations in ambipolar characteristic of graphene due to adsorption of Escherichia coli bacteria

    Science.gov (United States)

    Mulyana, Yana; Uenuma, Mutsunori; Okamoto, Naofumi; Ishikawa, Yasuaki; Yamashita, Ichiro; Uraoka, Yukiharu

    2018-03-01

    In order to evaluate the interaction between biomaterials and graphene from the perspective of its ambipolar characteristic, we have investigated the alteration in ambipolarity of graphene-based field effect transistors (G-FET) after the adsorption of Escherichia coli (E. coli) bacteria onto its graphene layer. We confirmed a positive shift in the ambipolar curve of the G-FETs after the adsorption of E. coli, presumably due to the negative charge of the adsorbed E. coli. However, we did not observe any decrease in the electron mobility or conductivity of the G-FETs, which implied that E. coli did not chemically react with the carbon atoms of graphene, nor introduce any damage on the graphene lattice, but were only physically adsorbed onto the graphene surface. These findings may extend the prominence of graphene as a stable yet sensitive material to be fully utilized in future biosensing applications. These results were then compared to those of ferritin adsorption, which is a protein shell and biomaterial like E. coli, and radical oxygen doping onto the graphene surface.

  7. Controlling the ambipolarity and improvement of RF performance using Gaussian Drain Doped TFET

    Science.gov (United States)

    Nigam, Kaushal; Gupta, Sarthak; Pandey, Sunil; Kondekar, P. N.; Sharma, Dheeraj

    2018-05-01

    Ambipolar conduction in tunnel field-effect transistors (TFETs) has been occurred as an inherent issue due to drain-channel tunneling. It makes TFET less efficient and restricts its application in complementary digital circuits. Therefore, this manuscript reports the application of Gaussian doping profile on nanometer regime silicon channel TFETs to completely eliminate the ambipolarity. For this, Gaussian doping is used in the drain region of conventional gate-drain overlap TFET to control the tunneling of electrons from the valence band of channel to the conduction band of drain. As a result, barrier width at the drain/channel junction increases significantly leading to the suppression of an ambipolar current even when higher doping concentration (1 ? 10 ? cm ?) is considered in the drain region. However, significant improvement in terms of RF figure-of-merits such as cut-off frequency (f ?), gain bandwidth product (GBW), and gate-to-drain capacitance (C ?) is achieved with Gaussian doped gate on drain overlap TFET as compared to its counterpart TFET.

  8. Near-field thermal radiation between hyperbolic metamaterials: Graphite and carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Liu, X. L.; Zhang, R. Z.; Zhang, Z. M., E-mail: zhuomin.zhang@me.gatech.edu [G. W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)

    2013-11-18

    The near-field radiative heat transfer for two hyperbolic metamaterials, namely, graphite and vertically aligned carbon nanotubes (CNTs), is investigated. Graphite is a naturally existing uniaxial medium, while CNT arrays can be modeled as an effective anisotropic medium. Different hyperbolic modes can be separately supported by these materials in certain infrared regions, resulting in a strong enhancement in near-field heat transfer. It is predicted that the heat flux between two CNT arrays can exceed that between SiC plates at any vacuum gap distance and is about 10 times higher with a 10 nm gap.

  9. Stable magnetization of iron filled carbon nanotube MFM probes in external magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Wolny, Franziska; Weissker, Uhland; Muehl, Thomas; Lutz, Matthias U; Mueller, Christian; Leonhardt, Albrecht; Buechner, Bernd, E-mail: f.wolny@ifw-dresden.d [Leibniz Institute for Solid State and Materials Research (IFW) Dresden, Helmholtzstrasse 20, 01069 Dresden (Germany)

    2010-01-01

    We present results on the application of an iron filled carbon nanotube (Fe-CNT) as a probe for magnetic force microscopy (MFM) in an external magnetic field. If an external field is applied parallel to the sample surface, conventional ferromagnetically coated MFM probes often have the disadvantage that the magnetization of the coating turns towards the direction of the applied field. Then it is difficult to distinguish the effect of the external field on the sample from those on the MFM probe. The Fe-CNT MFM probe has a large shape anisotropy due to the high aspect ratio of the enclosed iron nanowire. Thanks to this the direction of the magnetization stays mainly oriented along the long nanotube axis in in-plane fields up to our experimental limit of 250 mT. Thus, the quality of the MFM images remains unchanged. Apart from this, it is shown that Fe-CNT MFM probe yields a very good magnetic resolution of about 25 nm due to the small diameter of the iron filling.

  10. Effect of synthesis parameters on morphology of polyaniline (PANI) and field emission investigation of PANI nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Bankar, Prashant K.; More, Mahendra A., E-mail: mam@physics.unipune.ac.in [Center for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune-411007 (India); Patil, Sandip S. [Department of Physics, Modern College of Arts, Science and Commerce, Shivajinagar, Pune-411005. India (India)

    2015-06-24

    Polyaniline (PANI) nanostructures have been synthesized by simple chemical oxidation route at different monomer concentration along with variation in synthesis temperature. The effect of variation of synthesis parameters has been revealed using different characterization techniques. The structural and morphological characterization of the synthesized PANI nanostructures was carried out by scanning electron microscopy (SEM), transmission electron microscopy (TEM), whereas Fourier Transform Infrared spectroscopy (FTIR) has been used to reveal the chemical properties. With the variation in the synthesis temperature and monomer concentration, various morphologies characterized by formation of PANI nanoparticles, nanofibres, nanotubes and nanospheres, are revealed from the SEM analysis. The FTIR analysis reveals the formation of conducting state of PANI under prevailing experimental conditions. The field emission investigation of the conducting PANI nanotubes was performed in all metal UHV system at base pressure of 1x10{sup −8} mbar. The turn on field required to draw emission of 1 nA current was observed to be ∼ 2.2 V/μm and threshold field (corresponding to emission current density of 1 µA/cm2) was found to be 3.2 V/μm. The emission current was observed to be stable for more than three hours at a preset value 1 µA. The simple synthesis route and good field emission characteristics indicate potential of PANI nanofibres as a promising emitter for field emission based micro/nano devices.

  11. Single Nucleotide Polymorphism Detection Using Au-Decorated Single-Walled Carbon Nanotube Field Effect Transistors

    Directory of Open Access Journals (Sweden)

    Keum-Ju Lee

    2011-01-01

    Full Text Available We demonstrate that Au-cluster-decorated single-walled carbon nanotubes (SWNTs may be used to discriminate single nucleotide polymorphism (SNP. Nanoscale Au clusters were formed on the side walls of carbon nanotubes in a transistor geometry using electrochemical deposition. The effect of Au cluster decoration appeared as hole doping when electrical transport characteristics were examined. Thiolated single-stranded probe peptide nucleic acid (PNA was successfully immobilized on Au clusters decorating single-walled carbon nanotube field-effect transistors (SWNT-FETs, resulting in a conductance decrease that could be explained by a decrease in Au work function upon adsorption of thiolated PNA. Although a target single-stranded DNA (ssDNA with a single mismatch did not cause any change in electrical conductance, a clear decrease in conductance was observed with matched ssDNA, thereby showing the possibility of SNP (single nucleotide polymorphism detection using Au-cluster-decorated SWNT-FETs. However, a power to discriminate SNP target is lost in high ionic environment. We can conclude that observed SNP discrimination in low ionic environment is due to the hampered binding of SNP target on nanoscale surfaces in low ionic conditions.

  12. Oxygen plasma assisted end-opening and field emission enhancement in vertically aligned multiwall carbon nanotubes

    International Nuclear Information System (INIS)

    Mathur, A.; Roy, S.S.; Hazra, K.S.; Wadhwa, S.; Ray, S.C.; Mitra, S.K.; Misra, D.S.; McLaughlin, J.A.

    2012-01-01

    Highlights: ► We showed Ar/O 2 plasma can be effective for the end opening of aligned CNTs. ► The field emission property was dramatically enhanced after plasma modification. ► Microstructures were clearly understood by Raman and SEM analysis. ► Surface wet-ability at various functionalised conditions was studied. - Abstract: This paper highlights the changes in micro-structural and field emission properties of vertically aligned carbon nanotubes (VACNTs) via oxygen plasma treatment. We find that exposure of very low power oxygen plasma (6 W) at 13.56 MHz for 15–20 min, opens the tip of vertically aligned CNTs. Scanning electron microscopy and transmission electron microscopy images were used to identify the quality and micro-structural changes of the nanotube morphology and surfaces. Raman spectra showed that the numbers of defects were increased throughout the oxygen plasma treatment process. In addition, the hydrophobic nature of the VACNTs is altered significantly and the contact angle decreases drastically from 110° to 40°. It was observed that the electron field emission (EFE) characteristics are significantly enhanced. The turn-on electric field (ETOE) of CNTs decreased from ∼0.80 V μm −1 (untreated) to ∼0.60 V μm −1 (oxygen treated). We believe that the open ended VACNTs would be immensely valuable for applications such as micro/nanofluidic based filtering elements and display devices.

  13. Patterned growth of carbon nanotubes over vertically aligned silicon nanowire bundles for achieving uniform field emission.

    Science.gov (United States)

    Hung, Yung-Jr; Huang, Yung-Jui; Chang, Hsuan-Chen; Lee, Kuei-Yi; Lee, San-Liang

    2014-01-01

    A fabrication strategy is proposed to enable precise coverage of as-grown carbon nanotube (CNT) mats atop vertically aligned silicon nanowire (VA-SiNW) bundles in order to realize a uniform bundle array of CNT-SiNW heterojunctions over a large sample area. No obvious electrical degradation of as-fabricated SiNWs is observed according to the measured current-voltage characteristic of a two-terminal single-nanowire device. Bundle arrangement of CNT-SiNW heterojunctions is optimized to relax the electrostatic screening effect and to maximize the field enhancement factor. As a result, superior field emission performance and relatively stable emission current over 12 h is obtained. A bright and uniform fluorescent radiation is observed from CNT-SiNW-based field emitters regardless of its bundle periodicity, verifying the existence of high-density and efficient field emitters on the proposed CNT-SiNW bundle arrays.

  14. Field emission properties of low-density carbon nanotubes prepared on anodic aluminum-oxide template

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Soo-Hwan [Samsung Advanced Institute of Technology, Suwon (Korea, Republic of); Lee, Kun-Hong [Pohang University of Science and Technology, Pohang (Korea, Republic of)

    2004-08-15

    Anodic aluminum-oxide (AAO) templates were fabricated by two-step anodizing an Al film. After the Co catalyst had been electrochemically deposited onto the bottom of the AAO template, carbon nanotubes (CNTs) were grown by using catalytic pyrolysis of C{sub 2}H{sub 2} and H{sub 2} at 650 .deg. C. Overgrowth of CNTs with low density on the AAO templates was observed. The field-emission measurements on the samples showed a turn-on field of 2.17 V/mum and a field enhancement factor of 5700. The emission pattern on a phosphor screen was quite homogeneous over the area at a relatively low electric field.

  15. Electron and hole transport in ambipolar, thin film pentacene transistors

    International Nuclear Information System (INIS)

    Saudari, Sangameshwar R.; Kagan, Cherie R.

    2015-01-01

    Solution-processed, ambipolar, thin-film pentacene field-effect transistors were employed to study both electron and hole transport simultaneously in a single, organic solid-state device. Electron and hole mobilities were extracted from the respective unipolar saturation regimes and show thermally activated behavior and gate voltage dependence. We fit the gate voltage dependent saturation mobility to a power law to extract the characteristic Meyer-Neldel (MN) energy, a measure of the width of the exponential distribution of localized states extending into the energy gap of the organic semiconductor. The MN energy is ∼78 and ∼28 meV for electrons and holes, respectively, which reflects a greater density of localized tail states for electrons than holes. This is consistent with the lower measured electron than hole mobility. For holes, the well-behaved linear regime allows for four-point probe measurement of the contact resistance independent mobility and separate characterization of the width of the localized density of states, yielding a consistent MN energy of 28 meV

  16. Electron and hole transport in ambipolar, thin film pentacene transistors

    Energy Technology Data Exchange (ETDEWEB)

    Saudari, Sangameshwar R. [Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States); Kagan, Cherie R. [Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States); Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States); Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

    2015-01-21

    Solution-processed, ambipolar, thin-film pentacene field-effect transistors were employed to study both electron and hole transport simultaneously in a single, organic solid-state device. Electron and hole mobilities were extracted from the respective unipolar saturation regimes and show thermally activated behavior and gate voltage dependence. We fit the gate voltage dependent saturation mobility to a power law to extract the characteristic Meyer-Neldel (MN) energy, a measure of the width of the exponential distribution of localized states extending into the energy gap of the organic semiconductor. The MN energy is ∼78 and ∼28 meV for electrons and holes, respectively, which reflects a greater density of localized tail states for electrons than holes. This is consistent with the lower measured electron than hole mobility. For holes, the well-behaved linear regime allows for four-point probe measurement of the contact resistance independent mobility and separate characterization of the width of the localized density of states, yielding a consistent MN energy of 28 meV.

  17. Scattering effects on the performance of carbon nanotube field effect transistor in a compact model

    Science.gov (United States)

    Hamieh, S. D.; Desgreys, P.; Naviner, J. F.

    2010-01-01

    Carbon nanotube field-effect transistors (CNTFET) are being extensively studied as possible successors to CMOS. Device simulators have been developed to estimate their performance in sub-10-nm and device structures have been fabricated. In this work, a new compact model of single-walled semiconducting CNTFET is proposed implementing the calculation of energy conduction sub-band minima and the treatment of scattering effects through energy shift in CNTFET. The developed model has been used to simulate I-V characteristics using VHDL-AMS simulator.

  18. Dynamic response of carbon nanotube field-effect transistors analyzed by S-parameters measurement

    Energy Technology Data Exchange (ETDEWEB)

    Bethoux, J.-M. [Institut d' Electronique, de Microelectronique et de Nanotechnologie, C.N.R.S. U.M.R. 8520, BP 60069, F-59652, Villeneuve d' Ascq Cedex (France); Happy, H. [Institut d' Electronique, de Microelectronique et de Nanotechnologie, C.N.R.S. U.M.R. 8520, BP 60069, F-59652, Villeneuve d' Ascq Cedex (France)]. E-mail: henri.happy@iemn.univ-lille1.fr; Dambrine, G. [Institut d' Electronique, de Microelectronique et de Nanotechnologie, C.N.R.S. U.M.R. 8520, BP 60069, F-59652, Villeneuve d' Ascq Cedex (France); Derycke, V. [Laboratoire d' Electronique Moleculaire, SPEC, Commissariat a l' Energie Atomique, Saclay F-91191, Gif sur Yvette Cedex (France); Goffman, M. [Laboratoire d' Electronique Moleculaire, SPEC, Commissariat a l' Energie Atomique, Saclay F-91191, Gif sur Yvette Cedex (France); Bourgoin, J.-P. [Laboratoire d' Electronique Moleculaire, SPEC, Commissariat a l' Energie Atomique, Saclay F-91191, Gif sur Yvette Cedex (France)

    2006-12-15

    Carbon nanotube field-effect transistors (CN-FET) with a metallic back gate have been fabricated. By assembling a number of CNs in parallel, driving currents in the mA range have been obtained. The dynamic response of the CN-FETs has been investigated through S-parameters measurements. A current gain (|H {sub 21}|{sup 2}) cut-off frequency (f {sub t}) of 8 GHz, and a maximum stable gain (MSG) value of 10 dB at 1 GHz have been obtained. The extraction of an equivalent circuit is proposed.

  19. Dynamic response of carbon nanotube field-effect transistors analyzed by S-parameters measurement

    International Nuclear Information System (INIS)

    Bethoux, J.-M.; Happy, H.; Dambrine, G.; Derycke, V.; Goffman, M.; Bourgoin, J.-P.

    2006-01-01

    Carbon nanotube field-effect transistors (CN-FET) with a metallic back gate have been fabricated. By assembling a number of CNs in parallel, driving currents in the mA range have been obtained. The dynamic response of the CN-FETs has been investigated through S-parameters measurements. A current gain (|H 21 | 2 ) cut-off frequency (f t ) of 8 GHz, and a maximum stable gain (MSG) value of 10 dB at 1 GHz have been obtained. The extraction of an equivalent circuit is proposed

  20. Fringing-field dielectrophoretic assembly of ultrahigh-density semiconducting nanotube arrays with a self-limited pitch

    Science.gov (United States)

    Cao, Qing; Han, Shu-Jen; Tulevski, George S.

    2014-09-01

    One key challenge of realizing practical high-performance electronic devices based on single-walled carbon nanotubes is to produce electronically pure nanotube arrays with both a minuscule and uniform inter-tube pitch for sufficient device-packing density and homogeneity. Here we develop a method in which the alternating voltage-fringing electric field formed between surface microelectrodes and the substrate is utilized to assemble semiconducting nanotubes into well-aligned, ultrahigh-density and submonolayered arrays, with a consistent pitch as small as 21±6 nm determined by a self-limiting mechanism, based on the unique field focusing and screening effects of the fringing field. Field-effect transistors based on such nanotube arrays exhibit record high device transconductance (>50 μS μm-1) and decent on current per nanotube (~1 μA per tube) together with high on/off ratios at a drain bias of -1 V.

  1. Yb:KYW planar waveguide laser Q-switched by evanescent-field interaction with carbon nanotubes

    NARCIS (Netherlands)

    Kim, Jun Wan; Choi, Sun Young; Yeom, Dong-Il; Aravazhi, S.; Pollnau, Markus; Griebner, Uwe; Petrov, Valentin; Rotermund, Fabian

    2013-01-01

    We report Q-switched operation of a planar waveguide laser by evanescent-field interaction with single-walled carbon nanotubes deposited on top of the waveguide. The saturable-absorber-integrated gain medium, which operates based on evanescent-field interaction, enables the realization of a

  2. Field emission from carbon nanotube bundle arrays grown on self-aligned ZnO nanorods

    International Nuclear Information System (INIS)

    Li Chun; Fang Guojia; Yuan Longyan; Liu Nishuang; Ai Lei; Xiang Qi; Zhao Dongshan; Pan Chunxu; Zhao Xingzhong

    2007-01-01

    The field emission (FE) properties of carbon nanotube (CNT) bundle arrays grown on vertically self-aligned ZnO nanorods (ZNRs) are reported. The ZNRs were first synthesized on ZnO-seed-coated Si substrate by the vapour phase transport method, and then the radically grown CNTs were grown directly on the surface of the ZNRs from ethanol flames. The CNT/ZNR composite showed a turn-on field of 1.5 V μm -1 (at 0.1 μA cm -2 ), a threshold field of 4.5 V μm -1 (at 1 mA cm -2 ) and a stable emission current with fluctuations of 5%, demonstrating significantly enhanced FE of ZNRs due to the low work function and high aspect ratio of the CNTs, and large surface-to-volume ratio of the underlying ZNRs

  3. Effects of axial magnetic field on the electronic and optical properties of boron nitride nanotube

    Science.gov (United States)

    Chegel, Raad; Behzad, Somayeh

    2011-07-01

    The splitting of band structure and absorption spectrum, for boron nitride nanotubes (BNNTs) under axial magnetic field, is studied using the tight binding approximation. It is found that the band splitting ( ΔE) at the Γ point is linearly proportional to the magnetic field ( Φ/Φ0). Our results indicate that the splitting rate νii, of the two first bands nearest to the Fermi level, is a linear function of n -2 for all (n,0) zigzag BNNTs. By investigation of the dependence of band structure and absorption spectrum to the magnetic field, we found that absorption splitting is equal to band splitting and the splitting rate of band structure can be used to determine the splitting rate of the absorption spectrum.

  4. Initiation of vacuum breakdown and failure mechanism of the carbon nanotube during thermal field emission

    Science.gov (United States)

    Dan, Cai; Lie, Liu; Jin-Chuan, Ju; Xue-Long, Zhao; Hong-Yu, Zhou; Xiao, Wang

    2016-04-01

    The carbon nanotube (CNT)-based materials can be used as vacuum device cathodes. Owing to the excellent field emission properties of CNT, it has great potentials in the applications of an explosive field emission cathode. The falling off of CNT from the substrate, which frequently appears in experiments, restricts its application. In addition, the onset time of vacuum breakdown limits the performance of the high-power explosive-emission-cathode-based diode. In this paper, the characteristics of the CNT, electric field strength, contact resistance and the kind of substrate material are varied to study the parameter effects on the onset time of vacuum breakdown and failure mechanism of the CNT by using the finite element method. Project supported by the National Natural Science Foundation of China (Grant Nos. 11305263 and 61401484).

  5. Effect of Substrate Morphology on Growth and Field Emission Properties of Carbon Nanotube Films

    Directory of Open Access Journals (Sweden)

    Kumar Vikram

    2008-01-01

    Full Text Available AbstractCarbon nanotube (CNT films were grown by microwave plasma-enhanced chemical vapor deposition process on four types of Si substrates: (i mirror polished, (ii catalyst patterned, (iii mechanically polished having pits of varying size and shape, and (iv electrochemically etched. Iron thin film was used as catalytic material and acetylene and ammonia as the precursors. Morphological and structural characteristics of the films were investigated by scanning and transmission electron microscopes, respectively. CNT films of different morphology such as vertically aligned, randomly oriented flowers, or honey-comb like, depending on the morphology of the Si substrates, were obtained. CNTs had sharp tip and bamboo-like internal structure irrespective of growth morphology of the films. Comparative field emission measurements showed that patterned CNT films and that with randomly oriented morphology had superior emission characteristics with threshold field as low as ~2.0 V/μm. The defective (bamboo-structure structures of CNTs have been suggested for the enhanced emission performance of randomly oriented nanotube samples.

  6. Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET.

    Science.gov (United States)

    Tan, Michael Loong Peng; Lentaris, Georgios; Amaratunga Aj, Gehan

    2012-08-19

    The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency.

  7. Calculation of the transport processes in an ambipolar trap by direct statistic simulation

    International Nuclear Information System (INIS)

    Lysyanskij, P.B.; Tiunov, M.A.; Fomel', B.M.

    1982-01-01

    Plasma of an open magnetic trap is simulated with a set of test particles. Transverse drift movement of particles in axial-asymmetric magnetic fields is described with the method of finite transformations. Effects of collisions are simulated with arbitrary changes of velocity vectors of test particles which corresponds to their scattering with ''background'' plasma. The model takes account of longitudinal and transverse losses as well as atomic beam injection. The simulation permitted to obtain values and characteristics of longitudinal and transverse loss flows, ion temperature and radial profile of ma density in the central part of the ''AMBALplas'' ambipolar trap

  8. Purification of carbon nanotubes through an electric field near the arranged microelectrodes

    International Nuclear Information System (INIS)

    Shim, Hyung Cheoul; Lee, Hyung Woo; Yeom, Sujin; Kwak, Yoon Keun; Lee, Seung S; Kim, Soo Hyun

    2007-01-01

    In this work, we attempt to purify multi-walled carbon nanotubes (MWNTs) using electrophoresis induced by the application of an AC electric field to a set of microelectrodes in a microliquid channel. This purifying method is different from conventional methods based on chemical processes. It was observed that most of the MWNTs could pass along the microliquid channel without attaching to the electrode under specific conditions of 1 kHz, at 0.2 V rms μm -1 . On the other hand, the majority of the carbon impurities attached to the electrodes under identical conditions. Field emission scanning electron microscopy (FESEM) images and Raman spectra confirm that this condition is beneficial for removing carbon impurities. The proposed approach has potential applicability in the development of microdevices that can simultaneously perform the purification and fabrication of MWNTs

  9. Water-processed carbon nanotube/graphene hybrids with enhanced field emission properties

    International Nuclear Information System (INIS)

    Song, Meng; Xu, Peng; Wang, Xu; Wu, Huizhen; Wang, Miao; Song, Yenan; Li, Zhenhua; Zhao, Pei; Shang, Xuefu

    2015-01-01

    Integrating carbon nanotubes (CNTs) and graphene into hybrid structures provides a novel approach to three dimensional (3D) materials with advantageous properties. Here we present a water-processing method to create integrated CNT/graphene hybrids and test their field emission properties. With an optimized mass ratio of CNTs to graphene, the hybrid shows a significantly enhanced field emission performance, such as turn-on electric field of 0.79 V/μm, threshold electric field of 1.05 V/μm, maximum current density of 0.1 mA/cm 2 , and field enhancement factor of ∼1.3 × 10 4 . The optimized mass ratio for field emission emphasizes the importance of both CNTs and graphene in the hybrid. We also hypothesize a possible mechanism for this enhanced field emission performance from the CNT/graphene hybrid. During the solution treatment, graphene oxide behaves as surfactant sheets for CNTs to form a well dispersed solution, which leads to a better organized 3D structure with more conducting channels for electron transport

  10. Water-processed carbon nanotube/graphene hybrids with enhanced field emission properties

    Energy Technology Data Exchange (ETDEWEB)

    Song, Meng; Xu, Peng; Wang, Xu; Wu, Huizhen; Wang, Miao, E-mail: peizhao@zju.edu.cn, E-mail: miaowang@css.zju.edu.cn [Department of Physics, Zhejiang University, Hangzhou 310027 (China); Song, Yenan; Li, Zhenhua; Zhao, Pei, E-mail: peizhao@zju.edu.cn, E-mail: miaowang@css.zju.edu.cn [Institute of Applied Mechanics, Zhejiang University, Hangzhou 310027 (China); Shang, Xuefu [Department of Physics, Faculty of Science, Jiangsu University, Zhenjiang 212013 (China)

    2015-09-15

    Integrating carbon nanotubes (CNTs) and graphene into hybrid structures provides a novel approach to three dimensional (3D) materials with advantageous properties. Here we present a water-processing method to create integrated CNT/graphene hybrids and test their field emission properties. With an optimized mass ratio of CNTs to graphene, the hybrid shows a significantly enhanced field emission performance, such as turn-on electric field of 0.79 V/μm, threshold electric field of 1.05 V/μm, maximum current density of 0.1 mA/cm{sup 2}, and field enhancement factor of ∼1.3 × 10{sup 4}. The optimized mass ratio for field emission emphasizes the importance of both CNTs and graphene in the hybrid. We also hypothesize a possible mechanism for this enhanced field emission performance from the CNT/graphene hybrid. During the solution treatment, graphene oxide behaves as surfactant sheets for CNTs to form a well dispersed solution, which leads to a better organized 3D structure with more conducting channels for electron transport.

  11. Improved field emission performance of carbon nanotube by introducing copper metallic particles

    Directory of Open Access Journals (Sweden)

    Chen Yiren

    2011-01-01

    Full Text Available Abstract To improve the field emission performance of carbon nanotubes (CNTs, a simple and low-cost method was adopted in this article. We introduced copper particles for decorating the CNTs so as to form copper particle-CNT composites. The composites were fabricated by electrophoretic deposition technique which produced copper metallic particles localized on the outer wall of CNTs and deposited them onto indium tin oxide (ITO electrode. The results showed that the conductivity increased from 10-5 to 4 × 10-5 S while the turn-on field was reduced from 3.4 to 2.2 V/μm. Moreover, the field emission current tended to be undiminished after continuous emission for 24 h. The reasons were summarized that introducing copper metallic particles to decorate CNTs could increase the surface roughness of the CNTs which was beneficial to field emission, restrain field emission current from saturating when the applied electric field was above the critical field. In addition, it could also improve the electrical contact by increasing the contact area between CNT and ITO electrode that was beneficial to the electron transport and avoided instable electron emission caused by thermal injury of CNTs.

  12. Oxygen plasma assisted end-opening and field emission enhancement in vertically aligned multiwall carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Mathur, A. [NIBEC, School of Engineering, University of Ulster, Jordanstown, BT37 0QB (United Kingdom); Roy, S.S., E-mail: sinharoy@ualberta.ca [Department of Mechanical Engineering, University of Alberta, Edmonton, T6T 2G8 (Canada); Hazra, K.S. [Department of Physics, IIT Bombay, Powai, Mumbai-400076 (India); Wadhwa, S. [NIBEC, School of Engineering, University of Ulster, Jordanstown, BT37 0QB (United Kingdom); Ray, S.C. [School of Physics, University of the Witwatersrand, WITS 2050, Johannesburg (South Africa); Mitra, S.K. [Department of Mechanical Engineering, University of Alberta, Edmonton, T6T 2G8 (Canada); Misra, D.S. [Department of Physics, IIT Bombay, Powai, Mumbai-400076 (India); McLaughlin, J.A. [NIBEC, School of Engineering, University of Ulster, Jordanstown, BT37 0QB (United Kingdom)

    2012-05-15

    Highlights: Black-Right-Pointing-Pointer We showed Ar/O{sub 2} plasma can be effective for the end opening of aligned CNTs. Black-Right-Pointing-Pointer The field emission property was dramatically enhanced after plasma modification. Black-Right-Pointing-Pointer Microstructures were clearly understood by Raman and SEM analysis. Black-Right-Pointing-Pointer Surface wet-ability at various functionalised conditions was studied. - Abstract: This paper highlights the changes in micro-structural and field emission properties of vertically aligned carbon nanotubes (VACNTs) via oxygen plasma treatment. We find that exposure of very low power oxygen plasma (6 W) at 13.56 MHz for 15-20 min, opens the tip of vertically aligned CNTs. Scanning electron microscopy and transmission electron microscopy images were used to identify the quality and micro-structural changes of the nanotube morphology and surfaces. Raman spectra showed that the numbers of defects were increased throughout the oxygen plasma treatment process. In addition, the hydrophobic nature of the VACNTs is altered significantly and the contact angle decreases drastically from 110 Degree-Sign to 40 Degree-Sign . It was observed that the electron field emission (EFE) characteristics are significantly enhanced. The turn-on electric field (ETOE) of CNTs decreased from {approx}0.80 V {mu}m{sup -1} (untreated) to {approx}0.60 V {mu}m{sup -1} (oxygen treated). We believe that the open ended VACNTs would be immensely valuable for applications such as micro/nanofluidic based filtering elements and display devices.

  13. Tuning vertical alignment and field emission properties of multi-walled carbon nanotube bundles

    Science.gov (United States)

    Sreekanth, M.; Ghosh, S.; Srivastava, P.

    2018-01-01

    We report the growth of vertically aligned carbon nanotube bundles on Si substrate by thermal chemical vapor deposition technique. Vertical alignment was achieved without any carrier gas or lithography-assisted deposition. Growth has been carried out at 850 °C for different quantities of solution of xylene and ferrocene ranging from 2.25 to 3.00 ml in steps of 0.25 ml at a fixed concentration of 0.02 gm (ferrocene) per ml. To understand the growth mechanism, deposition was carried out for different concentrations of the solution by changing only the ferrocene quantity, ranging from 0.01 to 0.03 gm/ml. A tunable vertical alignment of multi-walled carbon nanotubes (CNTs) has been achieved by this process and examined by scanning and transmission electron microscopic techniques. Micro-crystalline structural analysis has been done using Raman spectroscopy. A systematic variation in field emission (FE) current density has been observed. The highest FE current density is seen for the film grown with 0.02 gm/ml concentration, which is attributed to the better alignment of CNTs, less structural disorder and less entanglement of CNTs on the surface. The alignment of CNTs has been qualitatively understood on the basis of self-assembled catalytic particles.

  14. Influence of contact height on the performance of vertically aligned carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi; Cheng, Yingchun; Guo, Zaibing; Wang, Zhihong; Zhu, Zhiyong; Zhang, Qing; Chan-Park, Chanpark; Schwingenschlö gl, Udo; Zhang, Xixiang

    2013-01-01

    Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been experimentally demonstrated (J. Li et al., Carbon, 2012, 50, 4628-4632). The source and drain contact heights in vertical CNTFETs could be much higher than in flat CNTFETs if the fabrication process is not optimized. To understand the impact of contact height on transistor performance, we use a semi-classical method to calculate the characteristics of CNTFETs with different contact heights. The results show that the drain current decreases with increasing contact height and saturates at a value governed by the thickness of the oxide. The current reduction caused by the increased contact height becomes more significant when the gate oxide is thicker. The higher the drain voltage, the larger the current reduction. It becomes even worse when the band gap of the carbon nanotube is larger. The current can differ by a factor of more than five between the CNTEFTs with low and high contact heights when the oxide thickness is 50 nm. In addition, the influence of the contact height is limited by the channel length. The contact height plays a minor role when the channel length is less than 100 nm. © 2013 The Royal Society of Chemistry.

  15. Frequency, delay and velocity analysis for intrinsic channel region of carbon nanotube field effect transistors

    Directory of Open Access Journals (Sweden)

    P. Geetha

    2014-03-01

    Full Text Available Gate wrap around field effect transistor is preferred for its good channel control. To study the high frequency behaviour of the device, parameters like cut-off frequency, transit or delay time, velocity are calculated and plotted. Double-walled and array of channels are considered in this work for enhanced output and impedance matching of the device with the measuring equipment terminal respectively. The perfomance of double-walledcarbon nanotube is compared with single-walled carbon nanotube and found that the device with double-wall shows appreciable improvement in its characteristics. Analysis of these parameters are done with various values of source/drain length, gate length, tube diameters and channel densities. The maximum cut-off frequency is found to be 72.3 THz with corresponding velocity as 5x106 m/s for channel density as 3 and gate length as 11nm. The number of channel is varied from 3 to 21 and found that the perfromance of the device containing double-walled carbon nano tube is better for channel number lesser than or equal to 12. The proposed modelling can be used for designing devices to handle high speed applications of future generation.

  16. Improved field emission from indium decorated multi-walled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Sreekanth, M.; Ghosh, S., E-mail: santanu1@physics.iitd.ernet.in; Biswas, P.; Kumar, S.; Srivastava, P.

    2016-10-15

    Graphical abstract: Improved field emission properties have been achieved for Indium (In) decorated MWCNTs and are shown using the schematic of field emission set up with In/CNT cathode, and a plot of J-E characteristics for pristine and In decorated CNTs. - Highlights: • Field emission (FE) properties have been studied for the first time from Indium (In) decorated MWCNT films. • Observed increased density of states near the Fermi level for In decorated films. • Superior field emission properties have been achieved for In decorated CNT films. - Abstract: Multi-walled carbon nanotube (MWCNT) films were grown using thermal chemical vapor deposition (T-CVD) process and were decorated with indium metal particles by thermal evaporation technique. The In metal particles are found to get oxidized. The In decorated films show 250% enhancement in the FE current density, lower turn-on and threshold fields, and better temporal stability as compared to their undecorated counterpart. This improvement in field emission properties is primarily attributed to increased density of states near the Fermi level. The presence of O 2p states along with a small contribution from In 5s states results in the enhancement of density of states in the vicinity of the Fermi level.

  17. Tumour Cell Membrane Poration and Ablation by Pulsed Low-Intensity Electric Field with Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Lijun Wang

    2015-03-01

    Full Text Available Electroporation is a physical method to increase permeabilization of cell membrane by electrical pulses. Carbon nanotubes (CNTs can potentially act like “lighting rods” or exhibit direct physical force on cell membrane under alternating electromagnetic fields thus reducing the required field strength. A cell poration/ablation system was built for exploring these effects of CNTs in which two-electrode sets were constructed and two perpendicular electric fields could be generated sequentially. By applying this system to breast cancer cells in the presence of multi-walled CNTs (MWCNTs, the effective pulse amplitude was reduced to 50 V/cm (main field/15 V/cm (alignment field at the optimized pulse frequency (5 Hz of 500 pulses. Under these conditions instant cell membrane permeabilization was increased to 38.62%, 2.77-fold higher than that without CNTs. Moreover, we also observed irreversible electroporation occurred under these conditions, such that only 39.23% of the cells were viable 24 h post treatment, in contrast to 87.01% cell viability without presence of CNTs. These results indicate that CNT-enhanced electroporation has the potential for tumour cell ablation by significantly lower electric fields than that in conventional electroporation therapy thus avoiding potential risks associated with the use of high intensity electric pulses.

  18. The tunable mechanical property of water-filled carbon nanotubes under an electric field

    Science.gov (United States)

    Ye, Hongfei; Zhang, Zhongqiang; Zhang, Hongwu; Chen, Zhen; Zong, Zhi; Zheng, Yonggang

    2014-03-01

    The spring-induced compression of water-filled carbon nanotubes (CNTs) under an electric field is investigated by molecular dynamics simulations. Due to the incompressibility and polarity of water, the mechanical property of CNTs can be tuned through filling with water molecules and applying an electric field. To explore the variation of the mechanical property of water-filled CNTs, the effects of the CNT length, the filling density and the electric field intensity are examined. The simulation results indicate that the water filling and electric field can result in a slight change in the elastic property (the elastic modulus and Poisson's ratio) of water-filled CNTs. However, the yield stress and average post-buckling stress exhibit a significant response to the water density and electric field intensity. As compared to hollow CNTs, the increment in yield stress of the water-filled CNTs under an electric field of 2.0 V Å-1 is up to 35.29%, which is even higher than that resulting from metal filling. The findings from this study provide a valuable theoretical basis for designing and fabricating the controlling units at the nanoscale.

  19. Selective detection of SO2 at room temperature based on organoplatinum functionalized single-walled carbon nanotube field effect transistors

    NARCIS (Netherlands)

    Cid, C.C.; Jimenez-Cadena, G.; Riu, J.; Maroto, A.; Rius, F.X.; Batema, G.D.; van Koten, G.

    2009-01-01

    We report a field effect transistor (FET) based on a network of single-walled carbon nanotubes (SWCNTs) that for the first time can selectively detect a single gaseous molecule in air by chemically functionalizing the SWCNTs with a selective molecular receptor. As a target model we used SO2. The

  20. Application of carbon nanotubes to topographical resolution enhancement of tapered fiber scanning near field optical microscopy probes

    Science.gov (United States)

    Huntington, S. T.; Jarvis, S. P.

    2003-05-01

    Scanning near field optical microscopy (SNOM) probes are typically tapered optical fibers with metallic coatings. The tip diameters are generally in excess of 300 nm and thus provide poor topographical resolution. Here we report on the attachment multiwalled carbon nanotubes to the probes in order to substantially enhance the topographical resolution, without adversely affecting the optical resolution.

  1. Outlook and Emerging Semiconducting Materials for Ambipolar Transistors

    NARCIS (Netherlands)

    Bisri, Satria Zulkarnaen; Piliego, Claudia; Gao, Jia; Loi, Maria Antonietta

    Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great

  2. Enhanced field emission properties of vertically aligned double-walled carbon nanotube arrays

    International Nuclear Information System (INIS)

    Chen, Guohai; Shin, Dong Hoon; Lee, Cheol Jin; Iwasaki, Takayuki; Kawarada, Hiroshi

    2008-01-01

    Vertically aligned double-walled carbon nanotube (VA-DWCNT) arrays were synthesized by point-arc microwave plasma chemical vapor deposition on Cr/n-Si and SiO 2 /n-Si substrates. The outer tube diameters of VA-DWCNTs are in the range of 2.5-3.8 nm, and the average interlayer spacing is approximately 0.42 nm. The field emission properties of these VA-DWCNTs were studied. It was found that a VA-DWCNT array grown on a Cr/n-Si substrate had better field emission properties as compared with a VA-DWCNT array grown on a SiO 2 /n-Si substrate and randomly oriented DWCNTs, showing a turn-on field of about 0.85 V μm -1 at the emission current density of 0.1 μA cm -2 and a threshold field of 1.67 V μm -1 at the emission current density of 1.0 mA cm -2 . The better field emission performance of the VA-DWCNT array was mainly attributed to the vertical alignment of DWCNTs on the Cr/n-Si substrate and the low contact resistance between CNTs and the Cr/n-Si substrate

  3. High-performance field emission device utilizing vertically aligned carbon nanotubes-based pillar architectures

    Science.gov (United States)

    Gupta, Bipin Kumar; Kedawat, Garima; Gangwar, Amit Kumar; Nagpal, Kanika; Kashyap, Pradeep Kumar; Srivastava, Shubhda; Singh, Satbir; Kumar, Pawan; Suryawanshi, Sachin R.; Seo, Deok Min; Tripathi, Prashant; More, Mahendra A.; Srivastava, O. N.; Hahm, Myung Gwan; Late, Dattatray J.

    2018-01-01

    The vertical aligned carbon nanotubes (CNTs)-based pillar architectures were created on laminated silicon oxide/silicon (SiO2/Si) wafer substrate at 775 °C by using water-assisted chemical vapor deposition under low pressure process condition. The lamination was carried out by aluminum (Al, 10.0 nm thickness) as a barrier layer and iron (Fe, 1.5 nm thickness) as a catalyst precursor layer sequentially on a silicon wafer substrate. Scanning electron microscope (SEM) images show that synthesized CNTs are vertically aligned and uniformly distributed with a high density. The CNTs have approximately 2-30 walls with an inner diameter of 3-8 nm. Raman spectrum analysis shows G-band at 1580 cm-1 and D-band at 1340 cm-1. The G-band is higher than D-band, which indicates that CNTs are highly graphitized. The field emission analysis of the CNTs revealed high field emission current density (4mA/cm2 at 1.2V/μm), low turn-on field (0.6 V/μm) and field enhancement factor (6917) with better stability and longer lifetime. Emitter morphology resulting in improved promising field emission performances, which is a crucial factor for the fabrication of pillared shaped vertical aligned CNTs bundles as practical electron sources.

  4. High-performance field emission device utilizing vertically aligned carbon nanotubes-based pillar architectures

    Directory of Open Access Journals (Sweden)

    Bipin Kumar Gupta

    2018-01-01

    Full Text Available The vertical aligned carbon nanotubes (CNTs-based pillar architectures were created on laminated silicon oxide/silicon (SiO2/Si wafer substrate at 775 °C by using water-assisted chemical vapor deposition under low pressure process condition. The lamination was carried out by aluminum (Al, 10.0 nm thickness as a barrier layer and iron (Fe, 1.5 nm thickness as a catalyst precursor layer sequentially on a silicon wafer substrate. Scanning electron microscope (SEM images show that synthesized CNTs are vertically aligned and uniformly distributed with a high density. The CNTs have approximately 2–30 walls with an inner diameter of 3–8 nm. Raman spectrum analysis shows G-band at 1580 cm−1 and D-band at 1340 cm−1. The G-band is higher than D-band, which indicates that CNTs are highly graphitized. The field emission analysis of the CNTs revealed high field emission current density (4mA/cm2 at 1.2V/μm, low turn-on field (0.6 V/μm and field enhancement factor (6917 with better stability and longer lifetime. Emitter morphology resulting in improved promising field emission performances, which is a crucial factor for the fabrication of pillared shaped vertical aligned CNTs bundles as practical electron sources.

  5. Optical absorption of zigzag single walled boron nitride nanotubes in axial magnetic field

    Science.gov (United States)

    Chegel, Raad; Behzad, Somayeh

    2013-11-01

    We have investigated the effect of axial magnetic field on the band structure, dipole matrix elements and absorption spectrum in different energy ranges, using tight binding approximation. It is found that magnetic field breaks the degeneracy in the band structure and creates new allowed transitions in the dipole matrix which leads to creation of new peaks in the absorption spectrum. It is found that, unlike to CNTs which show metallic-semiconductor transition, the BNNTs remain semiconductor in any magnetic field strength. By calculation the diameter dependence of peak positions, we found that the positions of three first peaks in the lower energy region (E <5.3 eV) are proportional to n-2. In the middle energy region (7 < E < 7.5 eV) all (n, 0) zigzag BNNTs, with even and odd nanotube index, have two distinct peaks in the absence of magnetic field which these peaks may be used to identify zigzag BNNTs from other tube chiralities. For odd (even) tubes, in the middle energy region, applying the magnetic field leads to splitting of these two peaks into three (five) distinct peaks.

  6. Reorientation of single-wall carbon nanotubes in negative anisotropy liquid crystals by an electric field

    Directory of Open Access Journals (Sweden)

    Amanda García-García

    2016-06-01

    Full Text Available Single-wall carbon nanotubes (SWCNT are anisotropic nanoparticles that can cause modifications in the electrical and electro-optical properties of liquid crystals. The control of the SWCNT concentration, distribution and reorientation in such self-organized fluids allows for the possibility of tuning the liquid crystal properties. The alignment and reorientation of CNTs are studied in a system where the liquid crystal orientation effect has been isolated. Complementary studies including Raman spectroscopy, microscopic inspection and impedance studies were carried out. The results reveal an ordered reorientation of the CNTs induced by an electric field, which does not alter the orientation of the liquid crystal molecules. Moreover, impedance spectroscopy suggests a nonnegligible anchoring force between the CNTs and the liquid crystal molecules.

  7. Light radiation through a transparent cathode plate with single-walled carbon nanotube field emitters

    International Nuclear Information System (INIS)

    Jang, E.S.; Goak, J.C.; Lee, H.S.; Lee, S.H.; Han, J.H.; Lee, C.S.; Sok, J.H.; Seo, Y.H.; Park, K.S.; Lee, N.S.

    2010-01-01

    In the conventional carbon nanotube backlight units (CNT-BLUs), light passes through the phosphor-coated anode glass plate, which thus faces closely the thin film transistor (TFT) backplate of a liquid crystal display panel. This configuration makes heat dissipation structurally difficult because light emission and heat generation occur simultaneously at the anode. We propose a novel configuration of a CNT-BLU where the cathode rather than the anode faces the TFT backplate by turning it upside down. In this design, light passes through the transparent cathode glass plate while heating occurs at the anode. We demonstrated a novel design of CNT-BLU by fabricating transparent single-walled CNT field emitters on the cathode and by coating a reflecting metal layer on the anode. This study hopefully provides a clue to solve the anode-heating problem which would be inevitably confronted for high-luminance and large-area CNT-BLUs.

  8. Label-free detection of DNA hybridization using carbon nanotube network field-effect transistors

    Science.gov (United States)

    Star, Alexander; Tu, Eugene; Niemann, Joseph; Gabriel, Jean-Christophe P.; Joiner, C. Steve; Valcke, Christian

    2006-01-01

    We report carbon nanotube network field-effect transistors (NTNFETs) that function as selective detectors of DNA immobilization and hybridization. NTNFETs with immobilized synthetic oligonucleotides have been shown to specifically recognize target DNA sequences, including H63D single-nucleotide polymorphism (SNP) discrimination in the HFE gene, responsible for hereditary hemochromatosis. The electronic responses of NTNFETs upon single-stranded DNA immobilization and subsequent DNA hybridization events were confirmed by using fluorescence-labeled oligonucleotides and then were further explored for label-free DNA detection at picomolar to micromolar concentrations. We have also observed a strong effect of DNA counterions on the electronic response, thus suggesting a charge-based mechanism of DNA detection using NTNFET devices. Implementation of label-free electronic detection assays using NTNFETs constitutes an important step toward low-cost, low-complexity, highly sensitive and accurate molecular diagnostics. hemochromatosis | SNP | biosensor

  9. Continuous adjustment of threshold voltage in carbon nanotube field-effect transistors through gate engineering

    Science.gov (United States)

    Zhong, Donglai; Zhao, Chenyi; Liu, Lijun; Zhang, Zhiyong; Peng, Lian-Mao

    2018-04-01

    In this letter, we report a gate engineering method to adjust threshold voltage of carbon nanotube (CNT) based field-effect transistors (FETs) continuously in a wide range, which makes the application of CNT FETs especially in digital integrated circuits (ICs) easier. Top-gated FETs are fabricated using solution-processed CNT network films with stacking Pd and Sc films as gate electrodes. By decreasing the thickness of the lower layer metal (Pd) from 20 nm to zero, the effective work function of the gate decreases, thus tuning the threshold voltage (Vt) of CNT FETs from -1.0 V to 0.2 V. The continuous adjustment of threshold voltage through gate engineering lays a solid foundation for multi-threshold technology in CNT based ICs, which then can simultaneously provide high performance and low power circuit modules on one chip.

  10. Detection of influenza A virus using carbon nanotubes field effect transistor based DNA sensor

    Science.gov (United States)

    Tran, Thi Luyen; Nguyen, Thi Thuy; Huyen Tran, Thi Thu; Chu, Van Tuan; Thinh Tran, Quang; Tuan Mai, Anh

    2017-09-01

    The carbon nanotubes field effect transistor (CNTFET) based DNA sensor was developed, in this paper, for detection of influenza A virus DNA. Number of factors that influence the output signal and analytical results were investigated. The initial probe DNA, decides the available DNA strands on CNTs, was 10 μM. The hybridization time for defined single helix was 120 min. The hybridization temperature was set at 30 °C to get a net change in drain current of the DNA sensor without altering properties of any biological compounds. The response time of the DNA sensor was less than one minute with a high reproducibility. In addition, the DNA sensor has a wide linear detection range from 1 pM to 10 nM, and a very low detection limit of 1 pM. Finally, after 7-month storage in 7.4 pH buffer, the output signal of DNA sensor recovered 97%.

  11. Large-current-controllable carbon nanotube field-effect transistor in electrolyte solution

    Science.gov (United States)

    Myodo, Miho; Inaba, Masafumi; Ohara, Kazuyoshi; Kato, Ryogo; Kobayashi, Mikinori; Hirano, Yu; Suzuki, Kazuma; Kawarada, Hiroshi

    2015-05-01

    Large-current-controllable carbon nanotube field-effect transistors (CNT-FETs) were fabricated with mm-long CNT sheets. The sheets, synthesized by remote-plasma-enhanced CVD, contained both single- and double-walled CNTs. Titanium was deposited on the sheet as source and drain electrodes, and an electrolyte solution was used as a gate electrode (solution gate) to apply a gate voltage to the CNTs through electric double layers formed around the CNTs. The drain current came to be well modulated as electrolyte solution penetrated into the sheets, and one of the solution gate CNT-FETs was able to control a large current of over 2.5 A. In addition, we determined the transconductance parameter per tube and compared it with values for other CNT-FETs. The potential of CNT sheets for applications requiring the control of large current is exhibited in this study.

  12. Au nanoparticles attached carbon nanotubes as a high performance active element in field effect transistor

    International Nuclear Information System (INIS)

    Lee, Myeongsoon; Kim, Don

    2016-01-01

    The Au nanoparticles attached carbon nanotubes (Au-CNTs), diameter ranged from 40 to 250 nm, were prepared and discussed their chemical and electrical properties. The shape and crystallinity of the carbon nanotubes (CNTs) phase depended main2ly on the diameter of CNTs (r_A_u_-_C_N_T). Highly crystalline, straight CNTs were observed when the r_A_u_-_C_N_T exceeded 80 nm, and less crystalline noodle-shaped CNTs were observed when the r_A_u_-_C_N_T was smaller than 80 nm. The crystallinity of the CNT phase was confirmed by analyzing the G and D bands in their Raman spectra and the electrical conductivities of the Au-CNTs. The electrical conductivity of the highly crystalline carbon phase of Au-CNTs (r_A_u_-_C_N_T = 250 nm) was ∼10"4 S/cm. The back-gated field effect transistors (FETs) based on the Au-CNTs, which were assembled on a SiO_2/Si wafer using the dielectrophoresis technique, showed that the Au-CNTs would be a good functional electronic material for future electronic and sensing applications. The transconductance and hole mobility of the FETs, which were assembled with the highly crystalline Au-CNTs (r_A_u_-_C_N_T = 250 nm), reached to 3.6 × 10"−"4 A/V and 3.1 × 10"4 cm"2/V s, respectively. These values are in the middle of those of reported for single walled carbon nanotubes and graphene. However, we could not find any field effect in a CNTFET, which assembled without Au nanoparticles, through the same process. - Highlights: • The shape and crystallinity of the CNTs depended mainly on the diameter of CNTs. • The electrical conductivity of the highly crystalline Au-CNTs was ∼10"4 S/cm. • The Au-CNT FET shows typical p-channel gate effect with the on/off ratio of ∼10"4. • The Au-CNT FET shows very high transconductance (g_m) and carrier mobility (μ_h).

  13. Au nanoparticles attached carbon nanotubes as a high performance active element in field effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Myeongsoon; Kim, Don, E-mail: donkim@pknu.ac.kr

    2016-08-15

    The Au nanoparticles attached carbon nanotubes (Au-CNTs), diameter ranged from 40 to 250 nm, were prepared and discussed their chemical and electrical properties. The shape and crystallinity of the carbon nanotubes (CNTs) phase depended main2ly on the diameter of CNTs (r{sub Au-CNT}). Highly crystalline, straight CNTs were observed when the r{sub Au-CNT} exceeded 80 nm, and less crystalline noodle-shaped CNTs were observed when the r{sub Au-CNT} was smaller than 80 nm. The crystallinity of the CNT phase was confirmed by analyzing the G and D bands in their Raman spectra and the electrical conductivities of the Au-CNTs. The electrical conductivity of the highly crystalline carbon phase of Au-CNTs (r{sub Au-CNT} = 250 nm) was ∼10{sup 4} S/cm. The back-gated field effect transistors (FETs) based on the Au-CNTs, which were assembled on a SiO{sub 2}/Si wafer using the dielectrophoresis technique, showed that the Au-CNTs would be a good functional electronic material for future electronic and sensing applications. The transconductance and hole mobility of the FETs, which were assembled with the highly crystalline Au-CNTs (r{sub Au-CNT} = 250 nm), reached to 3.6 × 10{sup −4} A/V and 3.1 × 10{sup 4} cm{sup 2}/V s, respectively. These values are in the middle of those of reported for single walled carbon nanotubes and graphene. However, we could not find any field effect in a CNTFET, which assembled without Au nanoparticles, through the same process. - Highlights: • The shape and crystallinity of the CNTs depended mainly on the diameter of CNTs. • The electrical conductivity of the highly crystalline Au-CNTs was ∼10{sup 4} S/cm. • The Au-CNT FET shows typical p-channel gate effect with the on/off ratio of ∼10{sup 4}. • The Au-CNT FET shows very high transconductance (g{sub m}) and carrier mobility (μ{sub h}).

  14. Optimization of field emission properties of carbon nanotubes by Taguchi method

    International Nuclear Information System (INIS)

    Ting, J.-H.; Chang, C.-C.; Chen, S.-L.; Lu, D.-S.; Kung, C.-Y.; Huang, F.-Y.

    2006-01-01

    It is the purpose of this study to evaluate the field emission property of carbon nanotubes (CNTs) prepared by microwave plasma-enhanced chemical vapor deposition (MPCVD) method. Nickel layer of 5 nm in thickness on 20-nm thickness titanium nitride film was transformed into discrete islands after hydrogen plasma pretreatment. CNTs were then grown up on Ni-coated areas by MPCVD. Through the practice of Taguchi method, superior CNT films with very low emission onset electric field, about 0.7 V/μm (at J = 10 μA/cm 2 ), are attained without post-deposition treatment. It is found that microwave power has the most important influence on the field emission characteristics of CNT films. The increase of methane flow ratio will downgrade the degree of graphitization of CNT and thus its field emission characteristics. Scanning electron microscope and transmission electron microscopy (TEM) observation and energy dispersive X-ray spectrometer analysis reveal that CNT growth by MPCVD is based on tip-growth mechanism. TEM micrographs validate the hollow, bamboo-like structure of the multi-walled CNTs

  15. Enhanced field emission properties of carbon nanotube bundles confined in SiO2 pits

    Science.gov (United States)

    Lim, Yu Dian; Grapov, Dmitry; Hu, Liangxing; Kong, Qinyu; Tay, Beng Kang; Labunov, Vladimir; Miao, Jianmin; Coquet, Philippe; Aditya, Sheel

    2018-02-01

    It has been widely reported that carbon nanotubes (CNTs) exhibit superior field emission (FE) properties due to their high aspect ratios and unique structural properties. Among the various types of CNTs, random growth CNTs exhibit promising FE properties due to their reduced inter-tube screening effect. However, growing random growth CNTs on individual catalyst islands often results in spread out CNT bundles, which reduces overall field enhancement. In this study, significant improvement in FE properties in CNT bundles is demonstrated by confining them in microfabricated SiO2 pits. Growing CNT bundles in narrow (0.5 μm diameter and 2 μm height) SiO2 pits achieves FE current density of 1-1.4 A cm-2, which is much higher than for freestanding CNT bundles (76.9 mA cm-2). From the Fowler Nordheim plots, confined CNT bundles show a higher field enhancement factor. This improvement can be attributed to the reduced bundle diameter by SiO2 pit confinement, which yields bundles with higher aspect ratios. Combining the obtained outcomes, it can be conclusively summarized that confining CNTs in SiO2 pits yields higher FE current density due to the higher field enhancement of confined CNTs.

  16. Electromechanical interactions in a carbon nanotube based thin film field emitting diode

    International Nuclear Information System (INIS)

    Sinha, N; Mahapatra, D Roy; Sun, Y; Yeow, J T W; Melnik, R V N; Jaffray, D A

    2008-01-01

    Carbon nanotubes (CNTs) have emerged as promising candidates for biomedical x-ray devices and other applications of field emission. CNTs grown/deposited in a thin film are used as cathodes for field emission. In spite of the good performance of such cathodes, the procedure to estimate the device current is not straightforward and the required insight towards design optimization is not well developed. In this paper, we report an analysis aided by a computational model and experiments by which the process of evolution and self-assembly (reorientation) of CNTs is characterized and the device current is estimated. The modeling approach involves two steps: (i) a phenomenological description of the degradation and fragmentation of CNTs and (ii) a mechanics based modeling of electromechanical interaction among CNTs during field emission. A computational scheme is developed by which the states of CNTs are updated in a time incremental manner. Finally, the device current is obtained by using the Fowler-Nordheim equation for field emission and by integrating the current density over computational cells. A detailed analysis of the results reveals the deflected shapes of the CNTs in an ensemble and the extent to which the initial state of geometry and orientation angles affect the device current. Experimental results confirm these effects

  17. Experimental and theoretical study on field emission properties of zinc oxide nanoparticles decorated carbon nanotubes

    Science.gov (United States)

    Li, Xin; Zhou, Wei-Man; Liu, Wei-Hua; Wang, Xiao-Li

    2015-05-01

    Field emission properties of zinc oxide (ZnO) nanoparticles (NPs) decorated carbon nanotubes (CNTs) are investigated experimentally and theoretically. CNTs are in situ decorated with ZnO NPs during the growth process by chemical vapor deposition using a carbon source from the iron phthalocyanine pyrolysis. The experimental field emission test shows that the ZnO NP decoration significantly improves the emission current from 50 μA to 275 μA at 550 V and the reduced threshold voltage from 450 V to 350 V. The field emission mechanism of ZnO NPs on CNTs is theoretically studied by the density functional theory (DFT) combined with the Penn-Plummer method. The ZnO NPs reconstruct the ZnO-CNT structure and pull down the surface barrier of the entire emitter system to 0.49 eV so as to reduce the threshold electric field. The simulation results suggest that the presence of ZnO NPs would increase the LDOS near the Fermi level and increase the emission current. The calculation results are consistent with the experiment results. Project supported by the National Natural Science Foundation of China (Grant Nos. 91123018, 61172040, and 61172041) and the Natural Science Foundation of Shaanxi Province, China (Grant No. 2014JM7277).

  18. Experimental and theoretical study on field emission properties of zinc oxide nanoparticles decorated carbon nanotubes

    International Nuclear Information System (INIS)

    Li Xin; Zhou Wei-Man; Liu Wei-Hua; Wang Xiao-Li

    2015-01-01

    Field emission properties of zinc oxide (ZnO) nanoparticles (NPs) decorated carbon nanotubes (CNTs) are investigated experimentally and theoretically. CNTs are in situ decorated with ZnO NPs during the growth process by chemical vapor deposition using a carbon source from the iron phthalocyanine pyrolysis. The experimental field emission test shows that the ZnO NP decoration significantly improves the emission current from 50 μA to 275 μA at 550 V and the reduced threshold voltage from 450 V to 350 V. The field emission mechanism of ZnO NPs on CNTs is theoretically studied by the density functional theory (DFT) combined with the Penn–Plummer method. The ZnO NPs reconstruct the ZnO–CNT structure and pull down the surface barrier of the entire emitter system to 0.49 eV so as to reduce the threshold electric field. The simulation results suggest that the presence of ZnO NPs would increase the LDOS near the Fermi level and increase the emission current. The calculation results are consistent with the experiment results. (paper)

  19. Transport of ions through a (6,6) carbon nanotube under electric fields

    Science.gov (United States)

    Shen, Li; Xu, Zhen; Zhou, Zhe-Wei; Hu, Guo-Hui

    2014-11-01

    The transport of water and ions through carbon nanotubes (CNTs) is crucial in nanotechnology and biotechnology. Previous investigation indicated that the ions can hardly pass through (6,6) CNTs due to their hydrated shells. In the present study, utilizing molecular dynamics simulation, it is shown that the energy barrier mainly originating from the hydrated water molecules could be overcome by applying an electric field large enough in the CNT axis direction. Potential of mean force is calculated to show the reduction of energy barrier when the electric field is present for (Na+, K+, Cl-) ions. Consequently, ionic flux through (6,6) CNTs can be found once the electric field becomes larger than a threshold value. The variation of the coordination numbers of ions at different locations from the bulk to the center of the CNT is also explored to elaborate this dynamic process. The thresholds of the electric field are different for Na+, K+, and Cl- due to their characteristics. This consequence might be potentially applied in ion selectivity in the future.

  20. Field Emission Property of Double-walled Carbon Nanotubes Related to Purification and Transmittance

    International Nuclear Information System (INIS)

    Ahn, KiTae; Jang, HyunChul; Hong, Wanshick; Park, Kyoungwan; Sok, Junghyun; Lyu, SeungChul; Lee, Hansung; Lee, Naesung; Han, Moonsup; Park, Yunsun

    2011-01-01

    Double-walled carbon nanotubes (DWCNTs) with high purity were produced by the catalytic decomposition of tetrahydrofuran (THF) using a Fe-Mo/MgO catalyst at 800°C. The as-synthesized DWCNTs typically have catalytic impurities and amorphous carbon, which were removed by a two-step purification process consisting of acid treatment and oxidation. In the acid treatment, metallic catalysts were removed in HCl at room temperature for 5 hr with magnetic stirring. Subsequently, the oxidation, using air at 380°C for 5 hr in the a vertical-type furnace, was used to remove the amorphous carbon particles. The DWCNT suspension was prepared by dispersing the purified DWCNTs in the aqueous sodium dodecyl sulfate solution with horn-type sonication. This was then air-sprayed on ITO glass to fabricate DWCNT field emitters. The field emission properties of DWCNT films related to transmittance were studied. This study provides the possibility of the application of large-area transparent CNT field emission cathodes.

  1. Near-field radiation between graphene-covered carbon nanotube arrays

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Richard Z.; Liu, Xianglei; Zhang, Zhuomin M., E-mail: zhuomin.zhang@me.gatech.edu [George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)

    2015-05-15

    It has been shown that at small separation distances, thermal radiation between hyperbolic metamaterials is enhanced over blackbodies. This theoretical study considers near-field radiation when graphene is covered on the surfaces of two semi-infinite vertically aligned carbon nanotube (VACNT) arrays separated by a sub-micron vacuum gap. Doped graphene is found to improve photon tunneling in a broad hyperbolic frequency range, due to the interaction with graphene-graphene surface plasmon polaritons (SPP). In order to elucidate the SPP resonance between graphene on hyperbolic substrates, vacuum-suspended graphene sheets separated by similar gap distances are compared. Increasing the Fermi energy through doping shifts the spectral heat flux peak toward higher frequencies. Although the presence of graphene on VACNT does not offer huge near-field heat flux enhancement over uncovered VACNT, this study identifies conditions (i.e., gap distance and doping level) that best utilize graphene to augment near-field radiation. Through the investigation of spatial Poynting vectors, heavily doped graphene is found to increase penetration depths in hyperbolic modes and the result is sensitive to the frequency regime. This study may have an impact on designing carbon-based vacuum thermophotovoltaics and thermal switches.

  2. Electric field induced needle-pulsed arc discharge carbon nanotube production apparatus: Circuitry and mechanical design

    Energy Technology Data Exchange (ETDEWEB)

    Kia, Kaveh Kazemi [Department of Electrical and Computer Engineering, Islamic Azad University of Bonab, Bonab (Iran, Islamic Republic of); Bonabi, Fahimeh [Department of Engineering, Islamic Azad University of Bonab, Bonab (Iran, Islamic Republic of)

    2012-12-15

    A simple and low cost apparatus is reported to produce multiwall carbon nanotubes and carbon nano-onions by a low power short pulsed arc discharge reactor. The electric circuitry and the mechanical design details and a micro-filtering assembly are described. The pulsed-plasma is generated and applied between two graphite electrodes. The pulse width is 0.3 {mu}s. A strong dc electric field is established along side the electrodes. The repetitive discharges occur in less than 1 mm distance between a sharp tip graphite rod as anode, and a tubular graphite as cathode. A hydrocarbon vapor, as carbon source, is introduced through the graphite nozzle in the cathode assembly. The pressure of the chamber is controlled by a vacuum pump. A magnetic field, perpendicular to the plasma path, is provided. The results show that the synergetic use of a pulsed-current and a dc power supply enables us to synthesize carbon nanoparticles with short pulsed plasma. The simplicity and inexpensiveness of this plan is noticeable. Pulsed nature of plasma provides some extra degrees of freedom that make the production more controllable. Effects of some design parameters such as electric field, pulse frequency, and cathode shape are discussed. The products are examined using scanning probe microscopy techniques.

  3. Electric field induced needle-pulsed arc discharge carbon nanotube production apparatus: circuitry and mechanical design.

    Science.gov (United States)

    Kia, Kaveh Kazemi; Bonabi, Fahimeh

    2012-12-01

    A simple and low cost apparatus is reported to produce multiwall carbon nanotubes and carbon nano-onions by a low power short pulsed arc discharge reactor. The electric circuitry and the mechanical design details and a micro-filtering assembly are described. The pulsed-plasma is generated and applied between two graphite electrodes. The pulse width is 0.3 μs. A strong dc electric field is established along side the electrodes. The repetitive discharges occur in less than 1 mm distance between a sharp tip graphite rod as anode, and a tubular graphite as cathode. A hydrocarbon vapor, as carbon source, is introduced through the graphite nozzle in the cathode assembly. The pressure of the chamber is controlled by a vacuum pump. A magnetic field, perpendicular to the plasma path, is provided. The results show that the synergetic use of a pulsed-current and a dc power supply enables us to synthesize carbon nanoparticles with short pulsed plasma. The simplicity and inexpensiveness of this plan is noticeable. Pulsed nature of plasma provides some extra degrees of freedom that make the production more controllable. Effects of some design parameters such as electric field, pulse frequency, and cathode shape are discussed. The products are examined using scanning probe microscopy techniques.

  4. Longitudinal waves in carbon nanotubes in the presence of transverse magnetic field and elastic medium

    Science.gov (United States)

    Liu, Hu; Liu, Hua; Yang, Jialing

    2017-09-01

    In the present paper, the coupling effect of transverse magnetic field and elastic medium on the longitudinal wave propagation along a carbon nanotube (CNT) is studied. Based on the nonlocal elasticity theory and Hamilton's principle, a unified nonlocal rod theory which takes into account the effects of small size scale, lateral inertia and radial deformation is proposed. The existing rod theories including the classic rod theory, the Rayleigh-Love theory and Rayleigh-Bishop theory for macro solids can be treated as the special cases of the present model. A two-parameter foundation model (Pasternak-type model) is used to represent the elastic medium. The influence of transverse magnetic field, Pasternak-type elastic medium and small size scale on the longitudinal wave propagation behavior of the CNT is investigated in detail. It is shown that the influences of lateral inertia and radial deformation cannot be neglected in analyzing the longitudinal wave propagation characteristics of the CNT. The results also show that the elastic medium and the transverse magnetic field will also affect the longitudinal wave dispersion behavior of the CNT significantly. The results obtained in this paper are helpful for understanding the mechanical behaviors of nanostructures embedded in an elastic medium.

  5. Medium band gap polymer based solution-processed high-κ composite gate dielectrics for ambipolar OFET

    Science.gov (United States)

    Canımkurbey, Betül; Unay, Hande; Çakırlar, Çiğdem; Büyükköse, Serkan; Çırpan, Ali; Berber, Savas; Altürk Parlak, Elif

    2018-03-01

    The authors present a novel ambipolar organic filed-effect transistors (OFETs) composed of a hybrid dielectric thin film of Ta2O5:PMMA nanocomposite material, and solution processed poly(selenophene, benzotriazole and dialkoxy substituted [1,2-b:4, 5-b‧] dithiophene (P-SBTBDT)-based organic semiconducting material as the active layer of the device. We find that the Ta2O5:PMMA insulator shows n-type conduction character, and its combination with the p-type P-SBTBDT organic semiconductor leads to an ambipolar OFET device. Top-gated OFETs were fabricated on glass substrate consisting of interdigitated ITO electrodes. P-SBTBDT-based material was spin coated on the interdigitated ITO electrodes. Subsequently, a solution processed Ta2O5:PMMA nanocomposite material was spin coated, thereby creating the gate dielectric layer. Finally, as a gate metal, an aluminum layer was deposited by thermal evaporation. The fabricated OFETs exhibited an ambipolar performance with good air-stability, high field-induced current and relatively high electron and hole mobilities although Ta2O5:PMMA nanocomposite films have slightly higher leakage current compared to the pure Ta2O5 films. Dielectric properties of the devices with different ratios of Ta2O5:PMMA were also investigated. The dielectric constant varied between 3.6 and 5.3 at 100 Hz, depending on the Ta2O5:PMMA ratio.

  6. Study of Thermal-Field Emission Properties and Investigation of Temperature dependent Noise in the Emission Current form vertical Carbon nanotube emitters

    KAUST Repository

    Kolekar, Sadhu; Patole, Shashikant P.; Patil, Sumati; Yoo, J.B.; Dharmadhikari, C.V.

    2017-01-01

    We have investigated temperature dependent field electron emission characteristics of vertical carbon nanotubes (CNTs). The generalized expression for electron emission from well defined cathode surface is given by Millikan and Lauritsen [1

  7. Light illumination effects in ambipolar FETs based on poly(3-hexylthiophene) and fullerene derivative composite films

    International Nuclear Information System (INIS)

    Shibao, Miho; Morita, Takeomi; Takashima, Wataru; Kaneto, Keiichi

    2008-01-01

    The effects of light illumination on field effect transistors based on poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C 61 -butyric methyl ester (PCBM) composite films have been studied. It is found that the light illumination on pure P3HT and PCBM generally resulted in decrease of the threshold voltages and increase of the mobilities by a little. In the composite film at the PCBM contents of x = [P3HT] / ([P3HT] + [PCBM]) = 0.67 ∼ 0.9, an ambipolar field transport appeared. The light illumination effect was observed remarkably in the shift of threshold voltage for the hole generation at x = 0.75. Variations of Hole and electron mobilities and threshold voltage of electron generation upon light illumination were basically similar to those of the pure materials. The results were discussed in terms of the light assisted carrier generation in field effects

  8. Strain on field effect transistors with single–walled–carbon nanotube network on flexible substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kim, T. G. [Samsung Advanced Institute of Technology, Research center for Time-domain Nano-functional Device, Giheung, Yong-In, Gyeonggi 446-712 (Korea, Republic of); Department of Electrical Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Kim, U. J.; Lee, E. H. [Samsung Advanced Institute of Technology, Frontier Research Laboratory, Giheung, Yong-In, Gyeonggi 446-712 (Korea, Republic of); Hwang, J. S. [School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, Gyeonggi 440-746 (Korea, Republic of); Hwang, S. W., E-mail: swnano.hwang@samsung.com, E-mail: sangsig@korea.ac.kr [Samsung Advanced Institute of Technology, Research center for Time-domain Nano-functional Device, Giheung, Yong-In, Gyeonggi 446-712 (Korea, Republic of); Samsung Advanced Institute of Technology, Frontier Research Laboratory, Giheung, Yong-In, Gyeonggi 446-712 (Korea, Republic of); Kim, S., E-mail: swnano.hwang@samsung.com, E-mail: sangsig@korea.ac.kr [Department of Electrical Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of)

    2013-12-07

    We have systematically analyzed the effect of strain on the electrical properties of flexible field effect transistors with a single-walled carbon nanotube (SWCNT) network on a polyethersulfone substrate. The strain was applied and estimated at the microscopic scale (<1 μm) by using scanning electron microscope (SEM) equipped with indigenously designed special bending jig. Interestingly, the strain estimated at the microscopic scale was found to be significantly different from the strain calculated at the macroscopic scale (centimeter-scale), by a factor of up to 4. Further in-depth analysis using SEM indicated that the significant difference in strain, obtained from two different measurement scales (microscale and macroscale), could be attributed to the formation of cracks and tears in the SWCNT network, or at the junction of SWCNT network and electrode during the strain process. Due to this irreversible morphological change, the electrical properties, such as on current level and field effect mobility, lowered by 14.3% and 4.6%, respectively.

  9. Vertically aligned carbon nanotubes/diamond double-layered structure for improved field electron emission stability

    Energy Technology Data Exchange (ETDEWEB)

    Yang, L., E-mail: qiaoqin.yang@mail.usask.ca; Yang, Q.; Zhang, C.; Li, Y.S.

    2013-12-31

    A double-layered nanostructure consisting of a layer of vertically aligned Carbon Nanotubes (CNTs) and a layer of diamond beneath has been synthesized on silicon substrate by Hot Filament Chemical Vapor Deposition. The synthesis was achieved by first depositing a layer of diamond on silicon and then depositing a top layer of vertically aligned CNTs by applying a negative bias on the substrate holder. The growth of CNTs was catalyzed by a thin layer of spin-coated iron nitride. The surface morphology and structure of the CNTs/diamond double-layered structure were characterized by Scanning Electron Microscope, Energy Dispersive X-ray spectrum, and Raman Spectroscopy. Their field electron emission (FEE) properties were measured by KEITHLEY 237 high voltage measurement unit, showing much higher FEE current stability than single layered CNTs. - Highlights: • A new double-layered nanostructure consisting of a layer of vertically aligned CNTs and a layer of diamond beneath has been synthesized by hot filament chemical vapor deposition. • This double-layered structure exhibits superior field electron emission stability. • The improvement of emission stability is due to the combination of the unique properties of diamond and CNTs.

  10. Growth and field emission properties of one-dimensional carbon composite structure consisting of vertically aligned carbon nanotubes and nanocones

    International Nuclear Information System (INIS)

    Zhang Hongxin; Feng, Peter X; Fonseca, Luis; Morell, Gerardo; Makarov, Vladimir I; Weiner, Brad R

    2009-01-01

    A simple approach is demonstrated for quickly growing a large-area aligned carbon composite nanostructure consisting of vertically aligned nanotubes and nanocones by the catalyst-assisted pulsed laser deposition techniques. The pyrolytic graphite was used as carbon source. The carbon nanocones were first grown on the molybdenum substrate with Ni catalysts. The carbon nanotubes have a uniform shape and length, aligned vertically on carbon nanocones, and the average diameter is about 7 nm. The special carbon composite arrays exhibit excellent field emission behaviours. The long-term field emission current stability of the one-dimensioned carbon nanostructure has also been investigated. No obvious current density decay was observed after a 10-day continuous experiment, indicating the super stability of the sample as cathode material.

  11. Interface control: A modified rooting technique for enhancing field emission from multiwall carbon nanotube based bulk emitters

    Energy Technology Data Exchange (ETDEWEB)

    Lahiri, Indranil [Nanomaterials and Device Lab, Department of Mechanical and Materials Engineering, Florida International University, 10555 West Flagler Street, Miami, FL 33174 (United States); Choi, Wonbong, E-mail: choiw@fiu.edu [Nanomaterials and Device Lab, Department of Mechanical and Materials Engineering, Florida International University, 10555 West Flagler Street, Miami, FL 33174 (United States)

    2011-08-15

    The unique properties of carbon nanotubes (CNTs) have raised hopes that these materials might find wide application as cold cathodes in various electron sources. The excellent field emission properties shown by CNT-based field emitters has further stimulated this expectation. However, efficient performance of a practical field emitter, which comprises a large number of randomly or regularly oriented CNTs, is restricted primarily due to poor junctions formed between CNTs and substrates. This study is aimed at enhancing the junction performance by way of a modified 'rooting' technique-interface control. In this process, the interface between CNTs and substrate has been tailored with different metals in an attempt to improve the CNT-substrate junction performance. Multiwall carbon nanotubes (MWCNTs) were synthesized on different interface-controlled substrates, i.e. Cu, Al, W, Si and low-temperature co-fired ceramic. All the samples produced mat-type, randomly oriented MWCNT structures. Among the four different substrates studied, MWCNT-based field emitters on Cu substrate demonstrated the best field emission response, in terms of low turn-on field, high emission current, good field enhancement factor and excellent stability in long-term operation. Emitter structures and their field emission behavior were correlated and it was shown that interface control, as an advanced 'rooting' process, plays an important role in determining the emission response from a bulk field emitter.

  12. Interface control: A modified rooting technique for enhancing field emission from multiwall carbon nanotube based bulk emitters

    International Nuclear Information System (INIS)

    Lahiri, Indranil; Choi, Wonbong

    2011-01-01

    The unique properties of carbon nanotubes (CNTs) have raised hopes that these materials might find wide application as cold cathodes in various electron sources. The excellent field emission properties shown by CNT-based field emitters has further stimulated this expectation. However, efficient performance of a practical field emitter, which comprises a large number of randomly or regularly oriented CNTs, is restricted primarily due to poor junctions formed between CNTs and substrates. This study is aimed at enhancing the junction performance by way of a modified 'rooting' technique-interface control. In this process, the interface between CNTs and substrate has been tailored with different metals in an attempt to improve the CNT-substrate junction performance. Multiwall carbon nanotubes (MWCNTs) were synthesized on different interface-controlled substrates, i.e. Cu, Al, W, Si and low-temperature co-fired ceramic. All the samples produced mat-type, randomly oriented MWCNT structures. Among the four different substrates studied, MWCNT-based field emitters on Cu substrate demonstrated the best field emission response, in terms of low turn-on field, high emission current, good field enhancement factor and excellent stability in long-term operation. Emitter structures and their field emission behavior were correlated and it was shown that interface control, as an advanced 'rooting' process, plays an important role in determining the emission response from a bulk field emitter.

  13. Improved field emission properties of thiolated multi-wall carbon nanotubes on a flexible carbon cloth substrate

    International Nuclear Information System (INIS)

    Chuang, F T; Chen, P Y; Cheng, T C; Chien, C H; Li, B J

    2007-01-01

    In this paper we report the observation of enhanced field emission properties from thiolated multi-wall carbon nanotubes (MWCNTs) produced by a simple and effective two-step chemical surface modification technique. This technique implements carboxylation and thiolation on the MWCNTs synthesized by microwave plasma chemical vapor deposition (MPCVD) on the flexible carbon cloth substrate. The resulting thiolated MWCNTs were found to have a very low threshold field value of 1.25 V μm -1 and a rather high field enhancement factor of 1.93 x 10 4 , which are crucial for applications in versatile vacuum microelectronics

  14. Nanotube cathodes.

    Energy Technology Data Exchange (ETDEWEB)

    Overmyer, Donald L.; Lockner, Thomas Ramsbeck; Siegal, Michael P.; Miller, Paul Albert

    2006-11-01

    Carbon nanotubes have shown promise for applications in many diverse areas of technology. In this report we describe our efforts to develop high-current cathodes from a variety of nanotubes deposited under a variety of conditions. Our goal was to develop a one-inch-diameter cathode capable of emitting 10 amperes of electron current for one second with an applied potential of 50 kV. This combination of current and pulse duration significantly exceeds previously reported nanotube-cathode performance. This project was planned for two years duration. In the first year, we tested the electron-emission characteristics of nanotube arrays fabricated under a variety of conditions. In the second year, we planned to select the best processing conditions, to fabricate larger cathode samples, and to test them on a high-power relativistic electron beam generator. In the first year, much effort was made to control nanotube arrays in terms of nanotube diameter and average spacing apart. When the project began, we believed that nanotubes approximately 10 nm in diameter would yield sufficient electron emission properties, based on the work of others in the field. Therefore, much of our focus was placed on measured field emission from such nanotubes grown on a variety of metallized surfaces and with varying average spacing between individual nanotubes. We easily reproduced the field emission properties typically measured by others from multi-wall carbon nanotube arrays. Interestingly, we did this without having the helpful vertical alignment to enhance emission; our nanotubes were randomly oriented. The good emission was most likely possible due to the improved crystallinity, and therefore, electrical conductivity, of our nanotubes compared to those in the literature. However, toward the end of the project, we learned that while these 10-nm-diameter CNTs had superior crystalline structure to the work of others studying field emission from multi-wall CNT arrays, these nanotubes still

  15. Nanotube cathodes

    International Nuclear Information System (INIS)

    Overmyer, Donald L.; Lockner, Thomas Ramsbeck; Siegal, Michael P.; Miller, Paul Albert

    2006-01-01

    Carbon nanotubes have shown promise for applications in many diverse areas of technology. In this report we describe our efforts to develop high-current cathodes from a variety of nanotubes deposited under a variety of conditions. Our goal was to develop a one-inch-diameter cathode capable of emitting 10 amperes of electron current for one second with an applied potential of 50 kV. This combination of current and pulse duration significantly exceeds previously reported nanotube-cathode performance. This project was planned for two years duration. In the first year, we tested the electron-emission characteristics of nanotube arrays fabricated under a variety of conditions. In the second year, we planned to select the best processing conditions, to fabricate larger cathode samples, and to test them on a high-power relativistic electron beam generator. In the first year, much effort was made to control nanotube arrays in terms of nanotube diameter and average spacing apart. When the project began, we believed that nanotubes approximately 10 nm in diameter would yield sufficient electron emission properties, based on the work of others in the field. Therefore, much of our focus was placed on measured field emission from such nanotubes grown on a variety of metallized surfaces and with varying average spacing between individual nanotubes. We easily reproduced the field emission properties typically measured by others from multi-wall carbon nanotube arrays. Interestingly, we did this without having the helpful vertical alignment to enhance emission; our nanotubes were randomly oriented. The good emission was most likely possible due to the improved crystallinity, and therefore, electrical conductivity, of our nanotubes compared to those in the literature. However, toward the end of the project, we learned that while these 10-nm-diameter CNTs had superior crystalline structure to the work of others studying field emission from multi-wall CNT arrays, these nanotubes still

  16. Fabrication and characterization of junctionless carbon nanotube field effect transistor for cholesterol detection

    Energy Technology Data Exchange (ETDEWEB)

    Barik, Md. Abdul, E-mail: abdulnpl@gmail.com; Dutta, Jiten Ch. [Department of Electronics and Communication Engineering, Tezpur University, Napaam, Tezpur, Assam 784028 (India)

    2014-08-04

    We have reported fabrication and characterization of polyaniline (PANI)/zinc oxide (ZnO) membrane-based junctionless carbon nanotube field effect transistor deposited on indium tin oxide glass plate for the detection of cholesterol (0.5–22.2 mM). Cholesterol oxidase (ChOx) has been immobilized on the PANI/ZnO membrane by physical adsorption technique. Electrical response has been recorded using digital multimeter (Agilent 3458A) in the presence of phosphate buffer saline of 50 mM, pH 7.0, and 0.9% NaCl contained in a glass pot. The results of response studies for cholesterol reveal linearity as 0.5–16.6 mM and improved sensitivity of 60 mV/decade in good agreement with Nernstian limit ∼59.2 mV/decade. The life time of this sensor has been found up to 5 months and response time of 1 s. The limit of detection with regression coefficient (r) ∼ 0.998 and Michaelis-Menten constant (K{sub m}) were found to be ∼0.25 and 1.4 mM, respectively, indicating high affinity of ChOx to cholesterol. The results obtained in this work show negligible interference with glucose and urea.

  17. Negative differential resistance in BN co-doped coaxial carbon nanotube field effect transistor

    Science.gov (United States)

    Shah, Khurshed A.; Parvaiz, M. Shunaid

    2016-12-01

    The CNTFETs are the most promising advanced alternatives to the conventional FETs due to their outstanding structure and electrical properties. In this paper, we report the I-V characteristics of zig-zag (4, 0) semiconducting coaxial carbon nanotube field effect transistor (CNTFET) using the non-equilibrium Green's function formalism. The CNTFET is co-doped with two, four and six boron-nitrogen (BN) atoms separately near the electrodes using the substitutional doping method and the I-V characteristics were calculated for each model using Atomistic Tool Kit software (version 13.8.1) and its virtual interface. The results reveal that all models show negative differential resistance (NDR) behavior with the maximum peak to valley current ratio (PVCR) of 3.2 at 300 K for the four atom doped model. The NDR behavior is due to the band to band tunneling (BTBT) in semiconducting CNTFET and decreases as the doping in the channel increases. The results are beneficial for next generation designing of nano devices and their potential applications in electronic industry.

  18. Targeting Antibodies to Carbon Nanotube Field Effect Transistors by Pyrene Hydrazide Modification of Heavy Chain Carbohydrates

    Directory of Open Access Journals (Sweden)

    Steingrimur Stefansson

    2012-01-01

    Full Text Available Many carbon nanotube field-effect transistor (CNT-FET studies have used immobilized antibodies as the ligand binding moiety. However, antibodies are not optimal for CNT-FET detection due to their large size and charge. Their size can prevent ligands from reaching within the Debye length of the CNTs and a layer of charged antibodies on the circuits can drown out any ligand signal. In an attempt to minimize the antibody footprint on CNT-FETs, we examined whether pyrene hydrazide modification of antibody carbohydrates could reduce the concentration required to functionalize CNT circuits. The carbohydrates are almost exclusively on the antibody Fc region and this site-specific modification could mediate uniform antibody orientation on the CNTs. We compared the hydrazide modification of anti-E. coli O157:H7 polyclonal antibodies to pyrenebutanoic acid succinimidyl ester-coated CNTs and carbodiimide-mediated antibody CNT attachment. Our results show that the pyrene hydrazide modification was superior to those methods with respect to bacteria detection and less than 1 nM labeled antibody was required to functionalize the circuits.

  19. Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.

    Science.gov (United States)

    Chen, Bingyan; Zhang, Panpan; Ding, Li; Han, Jie; Qiu, Song; Li, Qingwen; Zhang, Zhiyong; Peng, Lian-Mao

    2016-08-10

    Top-gated p-type field-effect transistors (FETs) have been fabricated in batch based on carbon nanotube (CNT) network thin films prepared from CNT solution and present high yield and highly uniform performance with small threshold voltage distribution with standard deviation of 34 mV. According to the property of FETs, various logical and arithmetical gates, shifters, and d-latch circuits were designed and demonstrated with rail-to-rail output. In particular, a 4-bit adder consisting of 140 p-type CNT FETs was demonstrated with higher packing density and lower supply voltage than other published integrated circuits based on CNT films, which indicates that CNT based integrated circuits can reach to medium scale. In addition, a 2-bit multiplier has been realized for the first time. Benefitted from the high uniformity and suitable threshold voltage of CNT FETs, all of the fabricated circuits based on CNT FETs can be driven by a single voltage as small as 2 V.

  20. High performance dendrimer functionalized single-walled carbon nanotubes field effect transistor biosensor for protein detection

    Science.gov (United States)

    Rajesh, Sharma, Vikash; Puri, Nitin K.; Mulchandani, Ashok; Kotnala, Ravinder K.

    2016-12-01

    We report a single-walled carbon nanotube (SWNT) field-effect transistor (FET) functionalized with Polyamidoamine (PAMAM) dendrimer with 128 carboxyl groups as anchors for site specific biomolecular immobilization of protein antibody for C-reactive protein (CRP) detection. The FET device was characterized by scanning electron microscopy and current-gate voltage (I-Vg) characteristic studies. A concentration-dependent decrease in the source-drain current was observed in the regime of clinical significance, with a detection limit of ˜85 pM and a high sensitivity of 20% change in current (ΔI/I) per decade CRP concentration, showing SWNT being locally gated by the binding of CRP to antibody (anti-CRP) on the FET device. The low value of the dissociation constant (Kd = 0.31 ± 0.13 μg ml-1) indicated a high affinity of the device towards CRP analyte arising due to high anti-CRP loading with a better probe orientation on the 3-dimensional PAMAM structure.

  1. Detailed simulation study of a dual material gate carbon nanotube field-effect transistor

    Science.gov (United States)

    Orouji, Ali A.; Arefinia, Zahra

    2009-02-01

    For the first time, a new type of carbon nanotube field-effect transistor (CNTFET), the dual material gate (DMG)-CNTFET, is proposed and simulated using quantum simulation that is based on self-consistent solution between two-dimensional Poisson equation and Schrödinger equation with open boundary conditions, within the nonequilibrium Green's function (NEGF) framework. The proposed structure is similar to that of the conventional coaxial CNTFET with the exception that the gate of the DMG-CNTFET consists of two laterally contacting metals with different work functions. Simulation results show DMG-CNTFET significantly decreases leakage current, drain conductance and subthreshold swing, and increases on-off current ratio and voltage gain as compared to conventional CNTFET. We demonstrate that the potential in the channel region exhibits a step function that ensures the screening of the drain potential variation by the gate near the drain resulting in suppressed short-channel effects like the drain-induced barrier lowering (DIBL) and hot-carrier effect.

  2. Near-Field Scanning Optical Microscope for the Study of Polymer-Nanotube Interactions

    National Research Council Canada - National Science Library

    Carroll, David

    2000-01-01

    ... optical properties in comparison to the intrinsic polymers Recent absorption and luminescence studies of carbon nanotube composites based on electro-optic polymer hosts such as MEH-PPV, have revealed...

  3. Demonstration of high current carbon nanotube enabled vertical organic field effect transistors at industrially relevant voltages

    Science.gov (United States)

    McCarthy, Mitchell

    The display market is presently dominated by the active matrix liquid crystal display (LCD). However, the active matrix organic light emitting diode (AMOLED) display is argued to become the successor to the LCD, and is already beginning its way into the market, mainly in small size displays. But, for AMOLED technology to become comparable in market share to LCD, larger size displays must become available at a competitive price with their LCD counterparts. A major issue preventing low-cost large AMOLED displays is the thin-film transistor (TFT) technology. Unlike the voltage driven LCD, the OLEDs in the AMOLED display are current driven. Because of this, the mature amorphous silicon TFT backplane technology used in the LCD must be upgraded to a material possessing a higher mobility. Polycrystalline silicon and transparent oxide TFT technologies are being considered to fill this need. But these technologies bring with them significant manufacturing complexity and cost concerns. Carbon nanotube enabled vertical organic field effect transistors (CN-VFETs) offer a unique solution to this problem (now known as the AMOLED backplane problem). The CN-VFET allows the use of organic semiconductors to be used for the semiconductor layer. Organics are known for their low-cost large area processing compatibility. Although the mobility of the best organics is only comparable to that of amorphous silicon, the CN-VFET makes up for this by orienting the channel vertically, as opposed to horizontally (like in conventional TFTs). This allows the CN-VFET to achieve sub-micron channel lengths without expensive high resolution patterning. Additionally, because the CN-VFET can be easily converted into a light emitting transistor (called the carbon nanotube enabled vertical organic light emitting transistor---CN-VOLET) by essentially stacking an OLED on top of the CN-VFET, more potential benefits can be realized. These potential benefits include, increased aperture ratio, increased OLED

  4. Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Sung Hun, E-mail: harin74@gmail.com, E-mail: jhl@snu.ac.kr, E-mail: jrogers@illinois.edu; Shin, Jongmin; Cho, In-Tak; Lee, Jong-Ho, E-mail: harin74@gmail.com, E-mail: jhl@snu.ac.kr, E-mail: jrogers@illinois.edu [Department of Electrical and Computer Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of); Han, Sang Youn [Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Display R and D Center, Samsung Display Co., Yongin-city, Gyeongki-do 446–711 (Korea, Republic of); Lee, Dong Joon; Lee, Chi Hwan; Rogers, John A., E-mail: harin74@gmail.com, E-mail: jhl@snu.ac.kr, E-mail: jrogers@illinois.edu [Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

    2014-07-07

    This paper presents materials, device designs, and physical/electrical characteristics of a form of nanotube electronics that is physically transient, in the sense that all constituent elements dissolve and/or disperse upon immersion into water. Studies of contact effects illustrate the ability to use water soluble metals such as magnesium for source/drain contacts in nanotube based field effect transistors. High mobilities and on/off ratios in transistors that use molybdenum, silicon nitride, and silicon oxide enable full swing characteristics for inverters at low voltages (∼5 V) and with high gains (∼30). Dissolution/disintegration tests of such systems on water soluble sheets of polyvinyl alcohol demonstrate physical transience within 30 min.

  5. The fabrication of carbon nanotube field-effect transistors with semiconductors as the source and drain contact materials.

    Science.gov (United States)

    Xiao, Z; Camino, F E

    2009-04-01

    Sb(2)Te(3) and Bi(2)Te(2)Se semiconductor materials were used as the source and drain contact materials in the fabrication of carbon nanotube field-effect transistors (CNTFETs). Ultra-purified single-walled carbon nanotubes (SWCNTs) were ultrasonically dispersed in N-methyl pyrrolidone solvent. Dielectrophoresis was used to deposit and align SWCNTs for fabrication of CNTFETs. The Sb(2)Te(3)- and Bi(2)Te(2)Se-based CNTFETs demonstrate p-type metal-oxide-silicon-like I-V curves with high on/off drain-source current ratio at large drain-source voltages and good saturation of drain-source current with increasing drain-source voltage. The fabrication process developed is novel and has general meaning, and could be used for the fabrication of SWCNT-based integrated devices and systems with semiconductor contact materials.

  6. Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics

    International Nuclear Information System (INIS)

    Jin, Sung Hun; Shin, Jongmin; Cho, In-Tak; Lee, Jong-Ho; Han, Sang Youn; Lee, Dong Joon; Lee, Chi Hwan; Rogers, John A.

    2014-01-01

    This paper presents materials, device designs, and physical/electrical characteristics of a form of nanotube electronics that is physically transient, in the sense that all constituent elements dissolve and/or disperse upon immersion into water. Studies of contact effects illustrate the ability to use water soluble metals such as magnesium for source/drain contacts in nanotube based field effect transistors. High mobilities and on/off ratios in transistors that use molybdenum, silicon nitride, and silicon oxide enable full swing characteristics for inverters at low voltages (∼5 V) and with high gains (∼30). Dissolution/disintegration tests of such systems on water soluble sheets of polyvinyl alcohol demonstrate physical transience within 30 min.

  7. Ultralow field emission from thinned, open-ended, and defected carbon nanotubes by using microwave hydrogen plasma processing

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Jian-Hua, E-mail: jhdeng1983@163.com [College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387 (China); Cheng, Lin; Wang, Fan-Jie; Yu, Bin; Li, Guo-Zheng; Li, De-Jun [College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387 (China); Cheng, Guo-An [Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875 (China)

    2015-01-01

    Graphical abstract: Thinned, open-ended, and defected carbon nanotubes were prepared by using hydrogen plasma processing. The processed carbon nanotubes have far better field emission performance than that of the pristine ones. - Highlights: • CVD prepared CNT arrays were processed by microwave hydrogen plasma. • Thinned, open-ended, and defected CNTs were obtained. • Processed CNTs have far better field emission performance than the pristine ones. • Processed CNTs have applicable emission stability after being perfectly aged. - Abstract: Ultralow field emission is achieved from carbon nanotubes (CNTs) by using microwave hydrogen plasma processing. After the processing, typical capped CNT tips are removed, with thinned, open-ended, and defected CNTs left. Structural analyses indicate that the processed CNTs have more SP{sup 3}-hybridized defects as compared to the pristine ones. The morphology of CNTs can be readily controlled by adjusting microwave powers, which change the shape of CNTs by means of hydrogen plasma etching. Processed CNTs with optimal morphology are found to have an ultralow turn-on field of 0.566 V/μm and threshold field of 0.896 V/μm, much better than 0.948 and 1.559 V/μm of the as-grown CNTs, respectively. This improved FE performance is ascribed to the structural changes of CNTs after the processing. The thinned and open-ended shape of CNTs can facilitate electron tunneling through barriers and additionally, the increased defects at tube walls can serve as new active emission sites. Furthermore, our plasma processed CNTs exhibit excellent field emission stability at a large emission current density of 10.36 mA/cm{sup 2} after being perfectly aged, showing promising prospects in applications as high-performance vacuum electron sources.

  8. A power system design and analysis of carbon nano-tubes field emission displays

    Science.gov (United States)

    Wang, Jong C.; Yao, W. C.

    2006-01-01

    In new generation Flat Panel Displays(FPD), a lot of design methods are being deployed, including OLED, PDP, TFT-LCD, Back Projection and Field Emission Display(FED) etc. These new generation FPDs have their respective pluses and minuses. Each has its selling points and market attractions. But among them, FED principles are most close to that of CRT displays. Not only FEDs are advantageous in their good degree of saturation of color, but also they have excellent contrast, luminance and electricity consumption etc. It has been considered as the main products of future generation FPDs. Japan and countries all over the world are successively proposing and launching related FED products in the fields. This will not only drive the FEDs into a wave of new trends, but also it will be able to replace most of the current FPD products within a short time. In this paper, based on these solid trends, we are determined to put into our resources and efforts to perform research on these important FEDs technologies and products, particularly in Carbon Nano-Tubes FEDs(CNT-FED). Our research group has already performed research on CNT-FED subjects for almost three years. During the course of our research, we have run into a lot of issues and problems. We have made every effort to overcome some of them. This paper performs comparative analysis of three power option for small size (4-inch) CNT-FEDs to drive the FED effects such as the direct current power, pulsed power and sinusoidal power respectively. This paper performs comparative analysis of three power options for small sized CNT-FEDs. It was concluded that the pulsed power option will produce the best results overall among the three power options. It is felt that these data presented can then be referenced and used to design a power system circuit to get an optimum design for better luminance and least power consumption for small sized commercial CNT-FED products.

  9. Optimizing the e-beam profile of a single carbon nanotube field emission device for electric propulsion systems

    Directory of Open Access Journals (Sweden)

    Juliano Fujioka Mologni

    2010-04-01

    Full Text Available Preliminary studies on field emission (FE arrays comprised of carbon nanotubes (CNT as an electron source for electric propulsion system show remarkably promising results. Design parameters for a carbon nanotube (CNT field-emission device operating on triode configuration were numerically simulated and optimized in order to enhance the e-beam focusing quality. An additional focus gate (FG was integrated to the device to control the profile of the emitted e-beam. An axisymmetric finite element model was developed to calculate the electric field distribution on the vacuum region and a modified Fowler-Nordheim (FN equation was used to evaluate the current density emission and the effective emitter area. Afterward, a FE simulation was employed in order to calculate the trajectory of the emitted electrons and define the electron-optical properties of the e-beam. The integration of the FG was fully investigated via computational intelligence techniques. The best performance device according to our simulations presents a collimated e-beam profile that suits well for field emission displays, magnetic field detection and electron microscopy. The automated computational design tool presented in this study strongly benefits the robust design of integrated electron-optical systems for vacuum field emission applications, including electrodynamic tethering and electric propulsion systems.

  10. Emitter spacing effects on field emission properties of laser-treated single-walled carbon nanotube buckypapers

    Energy Technology Data Exchange (ETDEWEB)

    Chen Yiwen; Miao, Hsin-Yuan; Zhang Mei; Liang, Richard; Zhang, Chuck; Wang, Ben [High-Performance Materials Institute, Florida State University, Tallahassee, FL 32310 (United States); Lin, Ryan Jiyao, E-mail: kenymiao@thu.edu.tw, E-mail: mzhang@eng.fsu.edu [Department of Electrical and Computer Engineering, Rose-Hulman Institute of Technology, Terre Haute, IN 47803 (United States)

    2010-12-10

    Carbon nanotube (CNT) emitters on buckypaper were activated by laser treatment and their field emission properties were investigated. The pristine buckypapers and CNT emitters' height, diameter, and spacing were characterized through optical analysis. The emitter spacing directly impacted the emission results when the laser power and treatment times were fixed. The increasing emitter density increased the enhanced field emission current and luminance. However, a continuous and excessive increase of emitter density with spacing reduction generated the screening effect. As a result, the extended screening effect from the smaller spacing eventually crippled the field emission effectiveness. Luminance intensity and uniformity of field emission suggest that the highly effective buckypaper will have a density of 2500 emission spots cm{sup -2}, which presents an effective field enhancement factor of 3721 and a moderated screening effect of 0.005. Proper laser treatment is an effective post-treatment process for optimizing field emission, luminance, and durability performance for buckypaper cold cathodes.

  11. Enhanced field emission properties of tilted graphene nanoribbons on aggregated TiO{sub 2} nanotube arrays

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Shang-Chao, E-mail: schung99@gmail.com [Department of Information Technology & Communication, Shih Chien University Kaohsiung Campus, Neimen, Kaohsiung 845, Taiwan (China); Chen, Yu-Jyun [Graduate Institute of Electro-Optical Engineering & Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)

    2016-07-15

    Highlights: • Graphene nanoribbons (GNBs) slanted on aggregate TiO{sub 2} nanotube (A-TNTs) as field-emitters. • Turn-on electric field and field enhancement factor β are dependent on the substrate morphology. • Various quantities of GNRs are deposited on top of A-TNTs (GNRs/A-TNTs) with different morphologies. • With an increase of GNBs compositions, the specimens' turn-on electric field is reduced to 2.8 V/μm. • The field enhancement factor increased rapidly to about 1964 with the addition of GNRs. - Abstract: Graphene nanoribbons (GNRs) slanted on aggregate TiO{sub 2} nanotube arrays (A-TNTs) with various compositions as field-emitters are reported. The morphology, crystalline structure, and composition of the as-obtained specimens were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and Raman spectrometry. The dependence of the turn-on electric field and the field enhancement factor β on substrate morphology was studied. An increase of GNRs reduces the specimens’ turn-on electric field to 2.8 V/μm and the field enhancement factor increased rapidly to about 1964 with the addition of GNRs. Results show a strong dependence of the field emission on GNR composition aligned with the gradient on the top of the A-TNT substrate. Enhanced FE properties of the modified TNTs can be mainly attributed to their improved electrical properties and rougher surface morphology.

  12. Dynamics of ultra-short electromagnetic pulses in the system of chiral carbon nanotube waveguides in the presence of external alternating electric field

    Energy Technology Data Exchange (ETDEWEB)

    Konobeeva, N.N., E-mail: yana_nn@inbox.ru [Volgograd State University, University Avenue 100, Volgograd 400062 (Russian Federation); Belonenko, M.B. [Volgograd Institute of Business, Uzhno-ukrainskaya str., Volgograd 400048 (Russian Federation)

    2014-04-01

    The paper addresses the propagation of ultra-short optical pulses in chiral carbon nanotubes in the presence of external alternating electric field. Following the assumption that the considered optical pulses are represented in the form of discrete solitons, we analyze the wave equation for the electromagnetic field and consider the dynamics of pulses in external field, their initial amplitudes and frequencies.

  13. Simulation of diode characteristics of carbon nanotube field-effect transistors with symmetric source and drain contacts

    KAUST Repository

    Li, Jingqi; Zhang, Xixiang

    2011-01-01

    The diode characteristics of carbon nanotube field-effect transistors (CNTFETs) with symmetric source and drain contacts have been experimentally found at zero gate voltage (Li J. et al., Appl. Phys. Lett., 92 (2008) 133111). We calculate this characteristic using a semiclassical method based on Schottky barrier transistor mechanism. The influences of metal work function, the diameter of the carbon nanotubes and the dielectric thickness on the rectification behavior have been studied. The calculation results show that the metal with a higher work function results in a better diode characteristics for a p-type CNTFET. For single-walled carbon nanotubes (SWNTs) with different band gaps, both forward current and reverse current increase with decreasing band gap, but the ratio of forward current to reverse current decreases with decreasing band gap. This result is well consistent with the experimental observations reported previously. The simulation of the dielectric thickness effect indicates that the thinner the dielectric layer, the better the rectification behavior. The CNTFETs without a bottom gate could not show the diode characteristics, which is consistent with the reported experimental observation. © 2011 Europhysics Letters Association.

  14. Simulation of diode characteristics of carbon nanotube field-effect transistors with symmetric source and drain contacts

    KAUST Repository

    Li, Jingqi

    2011-09-01

    The diode characteristics of carbon nanotube field-effect transistors (CNTFETs) with symmetric source and drain contacts have been experimentally found at zero gate voltage (Li J. et al., Appl. Phys. Lett., 92 (2008) 133111). We calculate this characteristic using a semiclassical method based on Schottky barrier transistor mechanism. The influences of metal work function, the diameter of the carbon nanotubes and the dielectric thickness on the rectification behavior have been studied. The calculation results show that the metal with a higher work function results in a better diode characteristics for a p-type CNTFET. For single-walled carbon nanotubes (SWNTs) with different band gaps, both forward current and reverse current increase with decreasing band gap, but the ratio of forward current to reverse current decreases with decreasing band gap. This result is well consistent with the experimental observations reported previously. The simulation of the dielectric thickness effect indicates that the thinner the dielectric layer, the better the rectification behavior. The CNTFETs without a bottom gate could not show the diode characteristics, which is consistent with the reported experimental observation. © 2011 Europhysics Letters Association.

  15. Effect of magnetic field on thermal conductivity and viscosity of a magnetic nanofluid loaded with carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Shahsavar, Amin [Kermanshah University of Technology, Kermanshah (Iran, Islamic Republic of); Salimpour, Mohammad Reza; Saghafian, Mohsen [Isfahan University of Technology, Isfahan (Iran, Islamic Republic of); Shafii, M. B. [Sharif University of Technology, Tehran(Iran, Islamic Republic of)

    2016-02-15

    The present work examines experimentally the effect of magnetic field on the viscosity and thermal conductivity of a hybrid nanofluid containing tetramethylammonium hydroxide (TMAH) coated Fe{sub 3}O{sub 4} nanoparticles and Gum arabic (GA) coated carbon nanotubes (CNTs). The hybrid nanofluid was prepared by using ultrasonic dispersion method. Magnetic field was created by a pair of spaced apart magnet plates. The effect of temperature on the time variation of thermal conductivity under applied magnetic field was also investigated. According to the results of this study, viscosity of the hybrid nanofluid increases with the strength of magnetic field, while it decreases with the increase of temperature. Additionally, it is found that the hybrid nanofluid behaves as a shear thinning fluid at low shear rates while it exhibits Newtonian behavior at high shear rates. Furthermore, results show that when an external magnetic field is applied to the studied magnetic nanofluids, the thermal conductivity experiences a peak.

  16. Influence of DC electric field on the Lennard-Jones potential and phonon vibrations of carbon nanotube on catalyst

    International Nuclear Information System (INIS)

    Saeidi, Mohammadreza; Vaezzadeh, Majid; Badakhshan, Farzaneh

    2011-01-01

    Influence of DC electric field on carbon nanotube (CNT) growth in chemical vapor deposition is studied. Investigation of electric field effect in van der Waals interaction shows that increase in DC electric field raises the magnitude of attractive term of the Lennard-Jones potential. By using a theoretical model based on phonon vibrations of CNT on catalyst, it is shown that there is an optimum field for growth. Also it is observed that CNT under optimum electric field is longer than CNT in the absence of field. Finally, the relation between optimum DC electric field and type of catalyst is investigated and for some intervals of electric field, the best catalyst is introduced, which is very useful for experimental researches. -- Research highlights: → Influence of DC electric field on CNT growth in CVD. → Effect of electric field on van der Waals interaction between CNT and its catalyst. → Applying DC electric field increases attractive term of Lennard-Jonespotential. → There is an optimum DC field for CNT growth. → For catalyst with stronger van der Waals interaction, optimum field is smaller.

  17. An ambipolar BODIPY derivative for a white exciplex OLED and cholesteric liquid crystal laser toward multifunctional devices

    OpenAIRE

    Chapran, Marian; Angioni, Enrico; Findlay, Neil J.; Breig, Benjamin; Cherpk, Vladyslav; Stakhira, Pavlo; Tuttle, Tell; Volyniuk, Dmytro; Grazulevicius, Juozas V.; Nastishin, Yuriy A.; Lavrentovich, Oleg D.; Skabara, Peter J.

    2017-01-01

    A new interface engineering method is demonstrated for the preparation of an efficient white organic light-emitting diode (WOLED) by embedding an ultrathin layer of the novel ambipolar red emissive compound 4,4-difluoro-2,6-di(4-hexylthiopen-2-yl)-1,3,5,7,8-pentamethyl-4-bora-3a,4a-diaza-s-indacene (bThBODIPY) in the exciplex formation region. The compound shows a hole and electron mobility of 3.3 × 10–4 and 2 × 10–4 cm2 V–1 s–1, respectively, at electric fields higher than 5.3 × 105 V cm–1. ...

  18. High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative

    KAUST Repository

    Huang, Wentao

    2018-03-13

    Combining high charge carrier mobility with ambipolar transport in light-absorbing organic semiconductors is highly desirable as it leads to enhanced charge photogeneration, and hence improved performance, in various optoelectronic devices including solar cells and photodetectors. Here we report the development of [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM)-based ultraviolet (UV) phototransistors with balanced electron and hole transport characteristics. The latter is achieved by fine-tuning the source–drain electrode work function using a self-assembled monolayer. Opto/electrical characterization of as-prepared ambipolar PC61BM phototransistors reveals promising photoresponse, particularly in the UV-A region (315–400 nm), with a maximum photosensitivity and responsivity of 9 × 103 and 3 × 103 A/W, respectively. Finally, the temporal response of the PC61BM phototransistors is found to be high despite the long channel length (10 s of μm) with typical switching times of <2 ms.

  19. High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative

    KAUST Repository

    Huang, Wentao; Lin, Yen-Hung; Anthopoulos, Thomas D.

    2018-01-01

    Combining high charge carrier mobility with ambipolar transport in light-absorbing organic semiconductors is highly desirable as it leads to enhanced charge photogeneration, and hence improved performance, in various optoelectronic devices including solar cells and photodetectors. Here we report the development of [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM)-based ultraviolet (UV) phototransistors with balanced electron and hole transport characteristics. The latter is achieved by fine-tuning the source–drain electrode work function using a self-assembled monolayer. Opto/electrical characterization of as-prepared ambipolar PC61BM phototransistors reveals promising photoresponse, particularly in the UV-A region (315–400 nm), with a maximum photosensitivity and responsivity of 9 × 103 and 3 × 103 A/W, respectively. Finally, the temporal response of the PC61BM phototransistors is found to be high despite the long channel length (10 s of μm) with typical switching times of <2 ms.

  20. Effect of Longitudinal Magnetic Field on Vibration Characteristics of Single-Walled Carbon Nanotubes in a Viscoelastic Medium

    Science.gov (United States)

    Zhang, D. P.; Lei, Y.; Shen, Z. B.

    2017-12-01

    The effect of longitudinal magnetic field on vibration response of a sing-walled carbon nanotube (SWCNT) embedded in viscoelastic medium is investigated. Based on nonlocal Euler-Bernoulli beam theory, Maxwell's relations, and Kelvin viscoelastic foundation model, the governing equations of motion for vibration analysis are established. The complex natural frequencies and corresponding mode shapes in closed form for the embedded SWCNT with arbitrary boundary conditions are obtained using transfer function method (TFM). The new analytical expressions for the complex natural frequencies are also derived for certain typical boundary conditions and Kelvin-Voigt model. Numerical results from the model are presented to show the effects of nonlocal parameter, viscoelastic parameter, boundary conditions, aspect ratio, and strength of the magnetic field on vibration characteristics for the embedded SWCNT in longitudinal magnetic field. The results demonstrate the efficiency of the proposed methods for vibration analysis of embedded SWCNTs under magnetic field.

  1. Non-Planar Nanotube and Wavy Architecture Based Ultra-High Performance Field Effect Transistors

    KAUST Repository

    Hanna, Amir

    2016-11-01

    This dissertation presents a unique concept for a device architecture named the nanotube (NT) architecture, which is capable of higher drive current compared to the Gate-All-Around Nanowire architecture when applied to heterostructure Tunnel Field Effect Transistors. Through the use of inner/outer core-shell gates, heterostructure NT TFET leverages physically larger tunneling area thus achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. We discuss the physics of p-type (Silicon/Indium Arsenide) and n-type (Silicon/Germanium hetero-structure) based TFETs. Numerical TCAD simulations have shown that NT TFETs have 5x and 1.6 x higher normalized ION when compared to GAA NW TFET for p and n-type TFETs, respectively. This is due to the availability of larger tunneling junction cross sectional area, and lower Shockley-Reed-Hall recombination, while achieving sub 60 mV/dec performance for more than 5 orders of magnitude of drain current, thus enabling scaling down of Vdd to 0.5 V. This dissertation also introduces a novel thin-film-transistors architecture that is named the Wavy Channel (WC) architecture, which allows for extending device width by integrating vertical fin-like substrate corrugations giving rise to up to 50% larger device width, without occupying extra chip area. The novel architecture shows 2x higher output drive current per unit chip area when compared to conventional planar architecture. The current increase is attributed to both the extra device width and 50% enhancement in field effect mobility due to electrostatic gating effects. Digital circuits are fabricated to demonstrate the potential of integrating WC TFT based circuits. WC inverters have shown 2× the peak-to-peak output voltage for the same input, and ~2× the operation frequency of the planar inverters for the same peak-to-peak output voltage. WC NAND circuits have shown 2× higher peak-to-peak output voltage, and 3× lower high-to-low propagation

  2. A digital miniature x-ray tube with a high-density triode carbon nanotube field emitter

    International Nuclear Information System (INIS)

    Jeong, Jin-Woo; Kang, Jun-Tae; Choi, Sungyoul; Kim, Jae-Woo; Song, Yoon-Ho; Ahn, Seungjoon

    2013-01-01

    We have fabricated a digital miniature x-ray tube (6 mm in diameter and 32 mm in length) with a high-density triode carbon nanotube (CNT) field emitter for special x-ray applications. The triode CNT emitter was densely formed within a diameter of below 4 mm with the focusing-functional gate. The brazing process enables us to obtain and maintain a desired vacuum level for the reliable electron emission from the CNT emitters after the vacuum packaging. The miniature x-ray tube exhibited a stable and reliable operation over 250 h in a pulse mode at an anode voltage of above 25 kV.

  3. Investigation of Schottky-Barrier carbon nanotube field-effect transistor by an efficient semi-classical numerical modeling

    International Nuclear Information System (INIS)

    Chen Changxin; Zhang Wei; Zhao Bo; Zhang Yafei

    2009-01-01

    An efficient semi-classical numerical modeling approach has been developed to simulate the coaxial Schottky-barrier carbon nanotube field-effect transistor (SB-CNTFET). In the modeling, the electrostatic potential of the CNT is obtained by self-consistently solving the analytic expression of CNT carrier distribution and the cylindrical Poisson equation, which significantly enhances the computational efficiency and simultaneously present a result in good agreement to that obtained from the non-equilibrium Green's function (NEGF) formalism based on the first principle. With this method, the effects of the CNT diameter, power supply voltage, thickness and dielectric constant of gate insulator on the device performance are investigated.

  4. Ampère-Class Pulsed Field Emission from Carbon-Nanotube Cathodes in a Radiofrequency Resonator

    Energy Technology Data Exchange (ETDEWEB)

    Mihalcea, D. [Northern Illinois U.; Faillace, L. [RadiaBeam Tech.; Hartzell, J. [RadiaBeam Tech.; Panuganti, H. [Northern Illinois U.; Boucher, S. M. [RadiaBeam Tech.; Murokh, A. [RadiaBeam Tech.; Piot, P. [Fermilab; Thangaraj, J. C.T. [Fermilab

    2014-12-01

    Pulsed field emission from cold carbon-nanotube cathodes placed in a radiofrequency resonant cavity was observed. The cathodes were located on the backplate of a conventional $1+\\frac{1}{2}$-cell resonant cavity operating at 1.3-GHz and resulted in the production of bunch train with maximum average current close to 0.7 Amp\\`ere. The measured Fowler-Nordheim characteristic, transverse emittance, and pulse duration are presented and, when possible, compared to numerical simulations. The implications of our results to high-average-current electron sources are briefly discussed.

  5. Ambipolar charge carrier transport in organic semiconductor blends of C{sub 60} and CuPc; Ambipolarer Ladungstransport in organischen Halbleiter-Mischschichten bestehend aus C{sub 60} und CuPc

    Energy Technology Data Exchange (ETDEWEB)

    Bronner, Markus

    2008-06-20

    In this work ambipolar charge carrier transport is realised in organic field effect transistors using mixtures of p-conductive copper phthalocyanine and n-conductive buckminster fullerene as active layer. These blends are known from research on organic solar cells and can be considered as a model system for ambipolar transport. The field effect mobilities for electrons and holes can be adjusted by the variation of the mixing ratio. Thereby balanced mobilities for both charge carrier types are possible. In this work the variation of mobility, threshold voltage and electronic energy levels with the mixing ratio is discussed. The charge carrier mobilities are strongly reduced upon dilution of the respective conducting phase by the other species. This shows that transport of each carrier species occurs by percolation through the respective phase in the blend. A strong correlation between contact resistance and mobility indicates that carrier injection is diffusion limited. A charge redistribution in the copper phthalocyanine causes a hole accumulation at the organic/organic interface and affects thereby the threshold voltage for holes. The electronic structure was investigated by photoelectron spectroscopy. It was found that there is no chemical reaction between the different materials. The common work function of these blends changes linearly between the work functions of the neat materials. Moreover, a constant ionisation potential for the highest occupied molecular orbitals of the two materials and the core levels is obtained. Furthermore ambipolar inverters using mixed organic semiconductor layers were made and compared to complementary inverters consisting of discrete p- and n-channel transistors. The experimental findings and concomitant simulations demonstrate the need for balanced electron and hole mobilities in order to achieve symmetric inverter characteristics. However, they also reveal the superior performance of true complementary logic inverters towards

  6. Magnetic-Field Dependence of Tunnel Couplings in Carbon Nanotube Quantum Dots

    DEFF Research Database (Denmark)

    Grove-Rasmussen, Kasper; Grap, S.; Paaske, Jens

    2012-01-01

    By means of sequential and cotunneling spectroscopy, we study the tunnel couplings between metallic leads and individual levels in a carbon nanotube quantum dot. The levels are ordered in shells consisting of two doublets with strong- and weak-tunnel couplings, leading to gate-dependent level...

  7. Thionyl chloride assisted functionalization of amorphous carbon nanotubes: A better field emitter and stable nanofluid with better thermal conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, S.K.; Jha, A. [School of Materials Science and Nanotechnology, Jadavpur University, Kolkata 700 032 (India); Chattopadhyay, K.K., E-mail: kalyan_chattopadhyay@yahoo.com [Thin Film & Nanoscience Laboratory, Department of Physics, Jadavpur University, Kolkata 700 032 (India); School of Materials Science and Nanotechnology, Jadavpur University, Kolkata 700 032 (India)

    2015-06-15

    Highlights: • Thionyl chloride assisted functionalization of amorphous carbon nanotubes (a-CNTs). • Improved dispersion enhanced thermal conductivity of engine oil. • Again f-a-CNTs showed enhanced field emission property compared to pure a-CNTs. - Abstract: Amorphous carbon nanotubes (a-CNTs) were synthesized at low temperature in open atmosphere and further functionalized by treating them in thionyl chloride added stearic acid-dichloro methane solution. The as prepared functionalized a-CNTs (f-a-CNTs) were characterized by Raman spectroscopy, Fourier transformed infrared spectroscopy, X-ray photoelectron spectroscopy, transmission and scanning electron microscopy. The nanofluid was prepared by dispersing f-a-CNTs in engine oil using ultrasonic treatment. The effective thermal conductivity of as prepared nanofluid was investigated at different loading (volume fraction of f-a-CNTs). Obtained experimental data of thermal conductivity were compared with the predicted values, calculated using existing theoretical models. Stability of the nanofluid was tested by means of zeta potential measurement to optimize the loading. The as prepared f-a-CNTs sample also showed improved field emission result as compared to pristine a-CNTs. Dependence of field emission behavior on inter electrode distance was investigated too.

  8. Highly reliable field electron emitters produced from reproducible damage-free carbon nanotube composite pastes with optimal inorganic fillers

    Science.gov (United States)

    Kim, Jae-Woo; Jeong, Jin-Woo; Kang, Jun-Tae; Choi, Sungyoul; Ahn, Seungjoon; Song, Yoon-Ho

    2014-02-01

    Highly reliable field electron emitters were developed using a formulation for reproducible damage-free carbon nanotube (CNT) composite pastes with optimal inorganic fillers and a ball-milling method. We carefully controlled the ball-milling sequence and time to avoid any damage to the CNTs, which incorporated fillers that were fully dispersed as paste constituents. The field electron emitters fabricated by printing the CNT pastes were found to exhibit almost perfect adhesion of the CNT emitters to the cathode, along with good uniformity and reproducibility. A high field enhancement factor of around 10 000 was achieved from the CNT field emitters developed. By selecting nano-sized metal alloys and oxides and using the same formulation sequence, we also developed reliable field emitters that could survive high-temperature post processing. These field emitters had high durability to post vacuum annealing at 950 °C, guaranteeing survival of the brazing process used in the sealing of field emission x-ray tubes. We evaluated the field emitters in a triode configuration in the harsh environment of a tiny vacuum-sealed vessel and observed very reliable operation for 30 h at a high current density of 350 mA cm-2. The CNT pastes and related field emitters that were developed could be usefully applied in reliable field emission devices.

  9. Carbon nanotubes growing on rapid thermal annealed Ni and their application to a triode-type field emission device

    International Nuclear Information System (INIS)

    Uh, Hyung Soo; Park, Sang Sik

    2006-01-01

    In this paper, we demonstrate a new triode-type field emitter arrays using carbon nanotubes (CNTs) as an electron emitter source. In the proposed structure, the gate electrode is located underneath the cathode electrode and the extractor electrode is surrounded by CNT emitters. CNTs were selectively grown on the patterned Ni catalyst layer by using plasma-enhanced chemical vapor deposition (PECVD). Vertically aligned CNTs were grown with gas mixture of acetylene and ammonia under external DC bias. Compared with a conventional under-gate structure, the proposed structure reduced the turn-on voltage by about 30%. In addition, with a view to controlling the density of CNTs, Ni catalyst thickness was varied and rapid thermal annealing (RTA) treatment was optionally adopted before CNT growth. With controlled Ni thickness and RTA condition, field emission efficiency was greatly improved by reducing the density of CNTs, which is due to the reduction of the electric field screening effect caused by dense CNTs

  10. Chirality dependence of dipole matrix element of carbon nanotubes in axial magnetic field: A third neighbor tight binding approach

    Science.gov (United States)

    Chegel, Raad; Behzad, Somayeh

    2014-02-01

    We have studied the electronic structure and dipole matrix element, D, of carbon nanotubes (CNTs) under magnetic field, using the third nearest neighbor tight binding model. It is shown that the 1NN and 3NN-TB band structures show differences such as the spacing and mixing of neighbor subbands. Applying the magnetic field leads to breaking the degeneracy behavior in the D transitions and creates new allowed transitions corresponding to the band modifications. It is found that |D| is proportional to the inverse tube radius and chiral angle. Our numerical results show that amount of filed induced splitting for the first optical peak is proportional to the magnetic field by the splitting rate ν11. It is shown that ν11 changes linearly and parabolicly with the chiral angle and radius, respectively.

  11. Using hydrocarbon as a carbon source for synthesis of carbon nanotube by electric field induced needle-pulsed plasma

    International Nuclear Information System (INIS)

    Kazemi Kia, Kaveh; Bonabi, Fahimeh

    2013-01-01

    In this work different hydrocarbons are used as the carbon source, in the production of carbon nanotubes (CNTs) and nano onions. An electric field induced needle pulse arc-discharge reactor is used. The influence of starting carbon on the synthesis of CNTs is investigated. The production efficiency is compared for Acetone, Isopropanol and Naphthalene as simple hydrocarbons. The hydrocarbons are preheated and then pretreated by electric field before being exposed to plasma. The hydrocarbon vapor is injected into plasma through a graphite spout in the cathode assembly. The pulsed plasma takes place between two graphite rods while a strong electric field has been already established alongside the electrodes. The pulse width is 0.3 μs. Mechanism of precursor decomposition is discussed by describing three forms of energy that are utilized to disintegrate the precursor molecules: thermal energy, electric field and kinetic energy of plasma. Molecular polarity of a hydrocarbon is one of the reasons for choosing carbon raw material as a precursor in an electric field induced low power pulsed-plasma. The results show that in order to obtain high quality carbon nanotubes, Acetone is preferred to Isopropanol and Naphthalene. Scanning probe microscopy techniques are used to investigate the products. - Highlights: • We synthesized CNTs (carbon nano tubes) by needle pulsed plasma. • We use different hydrocarbons as carbon source in the production of CNTs. • We investigated the influence of starting carbon on the synthesis of CNTs. • Thermal energy, electric field and kinetic energy are used to break carbon bonds. • Polar hydrocarbon molecules are more efficient than nonpolar ones in production

  12. Influence of viscosity of the medium on the disposition of carbon nanotubes anisotropic structures formation induced by electric field

    International Nuclear Information System (INIS)

    Yakovenko, O.S.; Matsuj, L.Yu.; Zhuravkov, O.V.; Vovchenko, L.D.

    2014-01-01

    To obtain carbon nanotubes (CNT)-polymer composites with anisotropic physical properties an electric field application can be used. This investigation considers factors of CNT anisotropic distribution formation induced by electric field and consideration is supported with experimental results where some factors were varied. In the article an influence of magnitude and type of electric field and time of processing by electric field on CNT anisotropic structures formation in polymer mediums of different viscosities (oil, epoxy resins) is investigated. The aim of this work was to examine the CNT structuration process induced by electric field in viscous mediums and to find out the most optimal conditions of preparation of polymer/carbon composite materials (CM) with specified distribution of carbon filler induced by electric field. Scoping on polymer/carbon CM structuration was conducted by optical microscopy method. It was found that the main factors during CNT network formation are the type and viscosity of polymer binder and applied electric field parameters. It was observed that for high viscous polymer CNT network formation is unfeasible even at high applied electric field strength. But also for low viscous medium at relatively low electric field strength the CNT network formation is complicated too. And it was seen from optical observation that a type of the polymer variation causes different response of network form under the same experimental conditions. These distinctions are considered in the article

  13. Design, Fabrication, and Characterization of Carbon Nanotube Field Emission Devices for Advanced Applications

    Science.gov (United States)

    Radauscher, Erich Justin

    Carbon nanotubes (CNTs) have recently emerged as promising candidates for electron field emission (FE) cathodes in integrated FE devices. These nanostructured carbon materials possess exceptional properties and their synthesis can be thoroughly controlled. Their integration into advanced electronic devices, including not only FE cathodes, but sensors, energy storage devices, and circuit components, has seen rapid growth in recent years. The results of the studies presented here demonstrate that the CNT field emitter is an excellent candidate for next generation vacuum microelectronics and related electron emission devices in several advanced applications. The work presented in this study addresses determining factors that currently confine the performance and application of CNT-FE devices. Characterization studies and improvements to the FE properties of CNTs, along with Micro-Electro-Mechanical Systems (MEMS) design and fabrication, were utilized in achieving these goals. Important performance limiting parameters, including emitter lifetime and failure from poor substrate adhesion, are examined. The compatibility and integration of CNT emitters with the governing MEMS substrate (i.e., polycrystalline silicon), and its impact on these performance limiting parameters, are reported. CNT growth mechanisms and kinetics were investigated and compared to silicon (100) to improve the design of CNT emitter integrated MEMS based electronic devices, specifically in vacuum microelectronic device (VMD) applications. Improved growth allowed for design and development of novel cold-cathode FE devices utilizing CNT field emitters. A chemical ionization (CI) source based on a CNT-FE electron source was developed and evaluated in a commercial desktop mass spectrometer for explosives trace detection. This work demonstrated the first reported use of a CNT-based ion source capable of collecting CI mass spectra. The CNT-FE source demonstrated low power requirements, pulsing

  14. Detection of Quinoline in G. boninense-Infected Plants Using Functionalized Multi-Walled Carbon Nanotubes: A Field Study.

    Science.gov (United States)

    Akanbi, Fowotade Sulayman; Yusof, Nor Azah; Abdullah, Jaafar; Sulaiman, Yusran; Hushiarian, Roozbeh

    2017-07-01

    Carbon nanotubes (CNTs) reinforced with gold nanoparticles (AuNPs) and chitosan nanoparticles (CTSNPs) were anchored on a screen-printed electrode to fabricate a multi-walled structure for the detection of quinoline. The surface morphology of the nanocomposites and the modified electrode was examined by an ultra-high resolution field emission scanning electron microscope (FESEM), and Fourier-transform infrared (FT-IR) spectroscopy was used to confirm the presence of specific functional groups on the multi-walled carbon nanotubes MWCNTs. Cyclic voltammetry (CV) and linear sweep voltammetry (LSV) were used to monitor the layer-by-layer assembly of ultra-thin films of nanocomposites on the surface of the electrode and other electrochemical characterizations. Under optimized conditions, the novel sensor displayed outstanding electrochemical reactivity towards the electro-oxidation of quinoline. The linear range was fixed between 0.0004 and 1.0 μM, with a limit of detection (LOD) of 3.75 nM. The fabricated electrode exhibited high stability with excellent sensitivity and selectivity, specifically attributable to the salient characteristics of AuNPs, CTSNPs, and MWCNTs and the synergistic inter-relationship between them. The newly developed electrode was tested in the field. The Ipa increased with an increase in the amount of quinoline solution added, and the peak potential deviated minimally, depicting the real capability of the newly fabricated electrode.

  15. Detection of Quinoline in G. boninense-Infected Plants Using Functionalized Multi-Walled Carbon Nanotubes: A Field Study

    Directory of Open Access Journals (Sweden)

    Fowotade Sulayman Akanbi

    2017-07-01

    Full Text Available Carbon nanotubes (CNTs reinforced with gold nanoparticles (AuNPs and chitosan nanoparticles (CTSNPs were anchored on a screen-printed electrode to fabricate a multi-walled structure for the detection of quinoline. The surface morphology of the nanocomposites and the modified electrode was examined by an ultra-high resolution field emission scanning electron microscope (FESEM, and Fourier-transform infrared (FT-IR spectroscopy was used to confirm the presence of specific functional groups on the multi-walled carbon nanotubes MWCNTs. Cyclic voltammetry (CV and linear sweep voltammetry (LSV were used to monitor the layer-by-layer assembly of ultra-thin films of nanocomposites on the surface of the electrode and other electrochemical characterizations. Under optimized conditions, the novel sensor displayed outstanding electrochemical reactivity towards the electro-oxidation of quinoline. The linear range was fixed between 0.0004 and 1.0 μM, with a limit of detection (LOD of 3.75 nM. The fabricated electrode exhibited high stability with excellent sensitivity and selectivity, specifically attributable to the salient characteristics of AuNPs, CTSNPs, and MWCNTs and the synergistic inter-relationship between them. The newly developed electrode was tested in the field. The Ipa increased with an increase in the amount of quinoline solution added, and the peak potential deviated minimally, depicting the real capability of the newly fabricated electrode.

  16. Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams

    Science.gov (United States)

    Hershkowitz, Noah [Madison, WI; Longmier, Benjamin [Madison, WI; Baalrud, Scott [Madison, WI

    2009-03-03

    An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

  17. A nanotube-based field emission x-ray source for microcomputed tomography

    International Nuclear Information System (INIS)

    Zhang, J.; Cheng, Y.; Lee, Y.Z.; Gao, B.; Qiu, Q.; Lin, W.L.; Lalush, D.; Lu, J.P.; Zhou, O.

    2005-01-01

    Microcomputed tomography (micro-CT) is a noninvasive imaging tool commonly used to probe the internal structures of small animals for biomedical research and for the inspection of microelectronics. Here we report the development of a micro-CT scanner with a carbon nanotube- (CNT-) based microfocus x-ray source. The performance of the CNT x-ray source and the imaging capability of the micro-CT scanner were characterized

  18. Carbon Nanotube Field Emitters Synthesized on Metal Alloy Substrate by PECVD for Customized Compact Field Emission Devices to Be Used in X-Ray Source Applications

    Directory of Open Access Journals (Sweden)

    Sangjun Park

    2018-05-01

    Full Text Available In this study, a simple, efficient, and economical process is reported for the direct synthesis of carbon nanotube (CNT field emitters on metal alloy. Given that CNT field emitters can be customized with ease for compact and cold field emission devices, they are promising replacements for thermionic emitters in widely accessible X-ray source electron guns. High performance CNT emitter samples were prepared in optimized plasma conditions through the plasma-enhanced chemical vapor deposition (PECVD process and subsequently characterized by using a scanning electron microscope, tunneling electron microscope, and Raman spectroscopy. For the cathode current, field emission (FE characteristics with respective turn on (1 μA/cm2 and threshold (1 mA/cm2 field of 2.84 and 4.05 V/μm were obtained. For a field of 5.24 V/μm, maximum current density of 7 mA/cm2 was achieved and a field enhancement factor β of 2838 was calculated. In addition, the CNT emitters sustained a current density of 6.7 mA/cm2 for 420 min under a field of 5.2 V/μm, confirming good operational stability. Finally, an X-ray generated image of an integrated circuit was taken using the compact field emission device developed herein.

  19. Control of unidirectional transport of single-file water molecules through carbon nanotubes in an electric field.

    Science.gov (United States)

    Su, Jiaye; Guo, Hongxia

    2011-01-25

    The transport of water molecules through nanopores is not only crucial to biological activities but also useful for designing novel nanofluidic devices. Despite considerable effort and progress that has been made, a controllable and unidirectional water flow is still difficult to achieve and the underlying mechanism is far from being understood. In this paper, using molecular dynamics simulations, we systematically investigate the effects of an external electric field on the transport of single-file water molecules through a carbon nanotube (CNT). We find that the orientation of water molecules inside the CNT can be well-tuned by the electric field and is strongly coupled to the water flux. This orientation-induced water flux is energetically due to the asymmetrical water-water interaction along the CNT axis. The wavelike water density profiles are disturbed under strong field strengths. The frequency of flipping for the water dipoles will decrease as the field strength is increased, and the flipping events vanish completely for the relatively large field strengths. Most importantly, a critical field strength E(c) related to the water flux is found. The water flux is increased as E is increased for E ≤ E(c), while it is almost unchanged for E > E(c). Thus, the electric field offers a level of governing for unidirectional water flow, which may have some biological applications and provides a route for designing efficient nanopumps.

  20. Current-Fluctuation Mechanism of Field Emitters Using Metallic Single-Walled Carbon Nanotubes with High Crystallinity

    Directory of Open Access Journals (Sweden)

    Norihiro Shimoi

    2017-12-01

    Full Text Available Field emitters can be used as a cathode electrode in a cathodoluminescence device, and single-walled carbon nanotubes (SWCNTs that are synthesized by arc discharge are expected to exhibit good field emission (FE properties. However, a cathodoluminescence device that uses field emitters radiates rays whose intensity considerably fluctuates at a low frequency, and the radiant fluctuation is caused by FE current fluctuation. To solve this problem, is very important to obtain a stable output for field emitters in a cathodoluminescence device. The authors consider that the electron-emission fluctuation is caused by Fowler–Nordheim electron tunneling and that the electrons in the Fowler–Nordheim regime pass through an inelastic potential barrier. We attempted to develop a theoretical model to analyze the power spectrum of the FE current fluctuation using metallic SWCNTs as field emitters, owing to their electrical conductivity by determining their FE properties. Field emitters that use metallic SWCNTs with high crystallinity were successfully developed to achieve a fluctuating FE current from field emitters at a low frequency by employing inelastic electron tunneling. This paper is the first report of the successful development of an inelastic-electron-tunneling model with a Wentzel–Kramers–Brillouin approximation for metallic SWCNTs based on the evaluation of FE properties.

  1. Internal electron transport barrier due to neoclassical ambipolarity in the Helically Symmetric Experiment

    International Nuclear Information System (INIS)

    Lore, J.; Briesemeister, A.; Anderson, D. T.; Anderson, F. S. B.; Likin, K. M.; Talmadge, J. N.; Zhai, K.; Guttenfelder, W.; Deng, C. B.; Spong, D. A.

    2010-01-01

    Electron cyclotron heated plasmas in the Helically Symmetric Experiment (HSX) feature strongly peaked electron temperature profiles; central temperatures are 2.5 keV with 100 kW injected power. These measurements, coupled with neoclassical predictions of large 'electron root' radial electric fields with strong radial shear, are evidence of a neoclassically driven thermal transport barrier. Neoclassical transport quantities are calculated using the PENTA code [D. A. Spong, Phys. Plasmas 12, 056114 (2005)], in which momentum is conserved and parallel flow is included. Unlike a conventional stellarator, which exhibits strong flow damping in all directions on a flux surface, quasisymmetric stellarators are free to rotate in the direction of symmetry, and the effect of momentum conservation in neoclassical calculations may therefore be significant. Momentum conservation is shown to modify the neoclassical ion flux and ambipolar ion root radial electric fields in the quasisymmetric configuration. The effect is much smaller in a HSX configuration where the symmetry is spoiled. In addition to neoclassical transport, a model of trapped electron mode turbulence is used to calculate the turbulent-driven electron thermal diffusivity. Turbulent transport quenching due to the neoclassically predicted radial electric field profile is needed in predictive transport simulations to reproduce the peaking of the measured electron temperature profile [Guttenfelder et al., Phys. Rev. Lett. 101, 215002 (2008)].

  2. Enhancement of adsorption and diffusion of lithium in single-walled carbon nanotubes by external electric field

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Wenwu; Wang, Zhiguo, E-mail: zgwang@uestc.edu.cn; Fu, Y.Q., E-mail: richard.fu@northumbria.ac.uk [University of Electronic Science and Technology of China, School of Physical Electronics, Center for Public Security Information and Equipment Integration Technology (China)

    2016-11-15

    Effects of an external transverse electric field on the adsorption and diffusion of Li atoms on the single-walled carbon nanotubes (CNTs) were investigated using density functional theory. Results showed that the adsorption energy was significantly enhanced by applying the electric field. As the external electric field was increased from 0.0 to 0.6 V/Å, the adsorption energies were decreased from −1.37 to −2.31, −1.32 to −2.46, and −1.33 to −2.63 eV for the Li atoms adsorbed on (6,6), (8,8), and (10,10) CNTs, respectively. Meanwhile, the diffusion barriers of the Li atoms on the CNTs were also decreased as the external electric field was applied. When the external electric field was increased from 0.0 to 0.6 V/Å, the energy barriers were decreased from 0.42, 0.40, and 0.39 eV to 0.20, 0.17, and 0.15 eV for Li diffusion in the (6,6), (8,8), and (10,10) CNTs, respectively. The results proved that an external electric field can be applied to enhance the adsorption and diffusion of Li atoms on the CNTs (used as the anode) for lithium ion batteries.

  3. Enhancement of adsorption and diffusion of lithium in single-walled carbon nanotubes by external electric field

    International Nuclear Information System (INIS)

    Shi, Wenwu; Wang, Zhiguo; Fu, Y.Q.

    2016-01-01

    Effects of an external transverse electric field on the adsorption and diffusion of Li atoms on the single-walled carbon nanotubes (CNTs) were investigated using density functional theory. Results showed that the adsorption energy was significantly enhanced by applying the electric field. As the external electric field was increased from 0.0 to 0.6 V/Å, the adsorption energies were decreased from −1.37 to −2.31, −1.32 to −2.46, and −1.33 to −2.63 eV for the Li atoms adsorbed on (6,6), (8,8), and (10,10) CNTs, respectively. Meanwhile, the diffusion barriers of the Li atoms on the CNTs were also decreased as the external electric field was applied. When the external electric field was increased from 0.0 to 0.6 V/Å, the energy barriers were decreased from 0.42, 0.40, and 0.39 eV to 0.20, 0.17, and 0.15 eV for Li diffusion in the (6,6), (8,8), and (10,10) CNTs, respectively. The results proved that an external electric field can be applied to enhance the adsorption and diffusion of Li atoms on the CNTs (used as the anode) for lithium ion batteries.

  4. Ambipolar transport in CVD grown MoSe2 monolayer using an ionic liquid gel gate dielectric

    Directory of Open Access Journals (Sweden)

    Deliris N. Ortiz

    2018-03-01

    Full Text Available CVD grown MoSe2 monolayers were electrically characterized at room temperature in a field effect transistor (FET configuration using an ionic liquid (IL as the gate dielectric. During the growth, instead of using MoO3 powder, ammonium heptamolybdate was used for better Mo control of the source and sodium cholate added for lager MoSe2 growth areas. In addition, a high specific capacitance (∼7 μF/cm2 IL was used as the gate dielectric to significantly reduce the operating voltage. The device exhibited ambipolar charge transport at low voltages with enhanced parameters during n- and p-FET operation. IL gating thins the Schottky barrier at the metal/semiconductor interface permitting efficient charge injection into the channel and reduces the effects of contact resistance on device performance. The large specific capacitance of the IL was also responsible for a much higher induced charge density compared to the standard SiO2 dielectric. The device was successfully tested as an inverter with a gain of ∼2. Using a common metal for contacts simplifies fabrication of this ambipolar device, and the possibility of radiative recombination of holes and electrons could further extend its use in low power optoelectronic applications.

  5. Field emission characteristics of vertically aligned carbon nanotubes with honeycomb configuration grown onto glass substrate with titanium coating

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Yung-Jui [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Chang, Hsin-Yueh; Chang, Hsuan-Chen [Department of Electronic and computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Shih, Yi-Ting; Su, Wei-Jhih [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Ciou, Chen-Hong [Department of Electronic and computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Chen, Yi-Ling [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Honda, Shin-ichi [Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280 (Japan); Huang, Ying-Sheng [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Department of Electronic and computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Lee, Kuei-Yi, E-mail: kylee@mail.ntust.edu.tw [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Department of Electronic and computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China)

    2014-03-15

    Highlights: • We have successfully designed the honeycomb patterns on glass substrate by photolithography technique. • Honeycomb-VACNTs were synthesized successfully onto glass substrate by using thermal CVD and covered different Ti films on VACNTs by e-beam evaporation. • After coating the Ti films, the current density reached 7 mA/cm{sup 2} when the electric field was 2.5 V/μm. • The fluorescence of VACNTs with Ti 15 nm films exhibits the high brightness screen and emission uniformity. -- Abstract: Carbon nanotubes (CNTs) were grown successfully onto a glass substrate using thermal chemical vapor deposition (TCVD) with C{sub 2}H{sub 2} gas at 700 °C. The synthesized CNTs exhibited good crystallinity and a vertically aligned morphology. The vertically aligned CNTs (VACNTs) were patterned with a honeycomb configuration using photolithography and characterized using field emission (FE) applications. Owing to the electric field concentration, the FE current density of VACNTs with honeycomb configuration was higher than that of the un-patterned VACNTs. Ti was coated onto the VACNT surface utilizing the relatively lower work function property to enhance the FE current density. The FE current density reached up to 7.0 mA/cm{sup 2} at an applied electric field of 2.5 V/μm. A fluorescent screen was monitored to demonstrate uniform FE VACNTs with a honeycomb configuration. The designed field emitter provided an admirable example for FE applications.

  6. Improved field emission properties of carbon nanotubes grown on stainless steel substrate and its application in ionization gauge

    Science.gov (United States)

    Li, Detian; Cheng, Yongjun; Wang, Yongjun; Zhang, Huzhong; Dong, Changkun; Li, Da

    2016-03-01

    Vertically aligned carbon nanotube (CNT) arrays were fabricated by chemical vapor deposition (CVD) technique on different substrates. Microstructures and field emission characteristics of the as-grown CNT arrays were investigated systematically, and its application in ionization gauge was also evaluated preliminarily. The results indicate that the as-grown CNT arrays are vertically well-aligned relating to the substrate surfaces, but the CNTs grown on stainless steel substrate are longer and more crystalline than the ones grown on silicon wafer substrate. The field emission behaviors of the as-grown CNT arrays are strongly dependent upon substrate properties. Namely, the CNT array grown on stainless steel substrate has better field emission properties, including lower turn on and threshold fields, better emission stability and repeatability, compared with the one grown on silicon wafer substrate. The superior field emission properties of the CNT array grown on stainless steel substrate are mainly attributed to low contact resistance, high thermal conductivity, good adhesion strength, etc. In addition, the metrological behaviors of ionization gauge with the CNT array grown on stainless steel substrate as an electron source were investigated, and this novel cathode ionization gauge extends the lower limit of linear pressure measurement to 10-8 Pa, which is one order of magnitude lower than the result reported for the same of gauge with CNT cathode.

  7. Use of tapered Pyrex capillary tubes to increase the mechanical stability of multiwall carbon nanotubes field emitters

    Science.gov (United States)

    Mousa, M. S.; Bani Ali, E. S.; Hagmann, M. J.

    2018-02-01

    In this study, NanocylTM NC 7000 Thin Multiwall Carbon Nanotubes (MWCNTs) were used with a high aspect ratio (>150) made by the process of catalytic chemical vapor deposition (CCVD). The field emitter tips were prepared by inserting these MWCT into fine glass capillary tubes that were pulled at high temperatures and then cut. Measurements were carried out under ultra-high vacuum (UHV) conditions with a base pressure of 10-9 mbar. The data show the effects of initial conditioning of MWCNT and hysteresis. Compression of the MWCNT by the capillary tubes appears to provide adequate mechanical support without requiring the use of a low-melting point electrically-conductive binder as has been used previously. Emission currents in excess of 1 μA were obtained so this technique shows promise as a reliable, stable, powerful electron source.

  8. High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Shibo; Zhang, Zhiyong, E-mail: zyzhang@pku.edu.cn; Si, Jia; Zhong, Donglai; Peng, Lian-Mao, E-mail: lmpeng@pku.edu.cn [Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871 (China)

    2014-08-11

    High-performance p-type carbon nanotube (CNT) transistors utilizing yttrium oxide as gate dielectric are presented by optimizing oxidization and annealing processes. Complementary metal-oxide-semiconductor (CMOS) field-effect-transistors (FETs) are then fabricated on CNTs, and the p- and n-type devices exhibit symmetrical high performances, especially with low threshold voltage near to zero. The corresponding CMOS CNT inverter is demonstrated to operate at an ultra-low supply voltage down to 0.2 V, while displaying sufficient voltage gain, high noise margin, and low power consumption. Yttrium oxide is proven to be a competitive gate dielectric for constructing high-performance CNT CMOS FETs and integrated circuits.

  9. Optical absorption of carbon nanotube diodes: Strength of the electronic transitions and sensitivity to the electric field polarization

    Science.gov (United States)

    Mencarelli, Davide; Pierantoni, Luca; Rozzi, Tullio

    2008-03-01

    Aim of this work is to model electrostatically doped carbon nanotubes (CNT), which have recently proved to perform as ideal PN diodes, also showing photovoltaic properties. The new model is able to predict the optical absorption of semiconducting CNT as function of size and chirality. We justify theoretically, for the first time, the experimentally observed capability of CNTs to detect and select not only a well defined set of frequencies, as resulting from their discrete band structure, but also the polarization of the incident radiation. The analysis develops from an approach proposed in a recent contribution. The periodic structure of CNTs is formally modeled as a photonic crystal, that is characterized by means of numerical simulators. Longitudinal and transverse components of the electric field are shown to excite distinct interband transitions between well defined energy levels. Equivalently, for a given energy of the incident radiation, absorption may show polarization ratios strongly exceeding unity.

  10. A Molecular Dynamics of Cold Neutral Atoms Captured by Carbon Nanotube Under Electric Field and Thermal Effect as a Selective Atoms Sensor.

    Science.gov (United States)

    Santos, Elson C; Neto, Abel F G; Maneschy, Carlos E; Chen, James; Ramalho, Teodorico C; Neto, A M J C

    2015-05-01

    Here we analyzed several physical behaviors through computational simulation of systems consisting of a zig-zag type carbon nanotube and relaxed cold atoms (Rb, Au, Si and Ar). These atoms were chosen due to their different chemical properties. The atoms individually were relaxed on the outside of the nanotube during the simulations. Each system was found under the influence of a uniform electric field parallel to the carbon nanotube and under the thermal effect of the initial temperature at the simulations. Because of the electric field, the cold atoms orbited the carbon nanotube while increasing the initial temperature allowed the variation of the radius of the orbiting atoms. We calculated the following quantities: kinetic energy, potential energy and total energy and in situ temperature, molar entropy variation and average radius of the orbit of the atoms. Our data suggest that only the action of electric field is enough to generate the attractive potential and this system could be used as a selected atoms sensor.

  11. Influence of high-energy electron irradiation on field emission properties of multi-walled carbon nanotubes (MWCNTs) films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, Sandip S. [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Koinkar, Pankaj M. [Center for International Cooperation in Engineering Education (CICEE), University of Tokushima, 2-1 Minami-Josanjima-Cho, Tokushima 770-8506 (Japan); Dhole, Sanjay D. [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); More, Mahendra A., E-mail: mam@physics.unipune.ac.i [Center for Advanced Studies in Material Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411007 (India); Murakami, Ri-ichi, E-mail: murakami@me.tokushima-u.ac.j [Department of Mechanical Engineering, University of Tokushima, 2-1 Minami-Josanjima-Cho, Tokushima 770-8506 (Japan)

    2011-04-15

    The effect of very high energy electron beam irradiation on the field emission characteristics of multi-walled carbon nanotubes (MWCNTs) has been investigated. The MWCNTs films deposited on silicon (Si) substrates were irradiated with 6 MeV electron beam at different fluence of 1x10{sup 15}, 2x10{sup 15} and 3x10{sup 15} electrons/cm{sup 2}. The irradiated films were characterized using scanning electron microscope (SEM) and micro-Raman spectrometer. The SEM analysis clearly revealed a change in surface morphology of the films upon irradiation. The Raman spectra of the irradiated films show structural damage caused by the interaction of high-energy electrons. The field emission studies were carried out in a planar diode configuration at the base pressure of {approx}1x10{sup -8} mbar. The values of the threshold field, required to draw an emission current density of {approx}1 {mu}A/cm{sup 2}, are found to be {approx}0.52, 1.9, 1.3 and 0.8 V/{mu}m for untreated, irradiated with fluence of 1x10{sup 15}, 2x10{sup 15} and 3x10{sup 15} electrons/cm{sup 2}. The irradiated films exhibit better emission current stability as compared to the untreated film. The improved field emission properties of the irradiated films have been attributed to the structural damage as revealed from the Raman studies.

  12. Comment on "Water-processed carbon nanotube/graphene hybrids with enhanced field emission properties" [AIP Advances 5, 097130 (2015)

    Science.gov (United States)

    Rani, Reena; Bhatia, Ravi

    2018-03-01

    In their research paper, M. Song et al. [AIP ADVANCES 5, 097130 (2015)] have claimed to have achieved enhanced field emission (FE) characteristics of carbon nanotubes (CNT)/graphene hybrids experimentally, exhibiting improved FE parameters e.g. turn-on electric field of 0.79 V/μm, threshold electric field of 1.05 V/μm, maximum emission current density (Jmax) of 5.76 mA/cm2, and field enhancement factor (β) of ˜1.3 × 104. The authors have emphasized on the surprisingly high value of β to be the basis of their claim of achieving superior FE performance which is further attributed to the optimized mass ratio CNT/ graphene, which is 5:1 in the present case. However, the claim based upon high value of β is misleading because it does not corroborate with the obtained Jmax parameter. Also, the obtained value of J is quite low in the mentioned study as compared to the reported values. For an instance, Sameera et al. [J. Appl. Phys. 111, 044307 (2012) & Appl. Phys. Lett. 102, 033102 (2013)] have reported FE properties of CNT composites and reduced graphene oxide with Jmax and β values of the order of ˜102 mA/cm2 and 6 × 103, respectively. Therefore, the conclusions drawn by M. Song et al. [AIP ADVANCES 5, 097130 (2015)] in their paper do no hold.

  13. Ultraclean individual suspended single-walled carbon nanotube field effect transistor

    Science.gov (United States)

    Liu, Siyu; Zhang, Jian; Nshimiyimana, Jean Pierre; Chi, Xiannian; Hu, Xiao; Wu, Pei; Liu, Jia; Wang, Gongtang; Sun, Lianfeng

    2018-04-01

    In this work, we report an effective technique of fabricating ultraclean individual suspended single-walled carbon nanotube (SWNT) transistors. The surface tension of molten silver is utilized to suspend an individual SWNT between a pair of Pd electrodes during annealing treatment. This approach avoids the usage and the residues of organic resist attached to SWNTs, resulting ultraclean SWNT devices. And the resistance per micrometer of suspended SWNTs is found to be smaller than that of non-suspended SWNTs, indicating the effect of the substrate on the electrical properties of SWNTs. The ON-state resistance (˜50 kΩ), mobility of 8600 cm2 V-1 s-1 and large on/off ratio (˜105) of semiconducting suspended SWNT devices indicate its advantages and potential applications.

  14. Photoelectrochemical processes in organic semiconductor: Ambipolar perylene diimide thin film

    Science.gov (United States)

    Kim, Jung Yong; Chung, In Jae

    2018-03-01

    A thin film of N,N‧-dioctadecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C18) is spin-coated on indium tin oxide (ITO) glass. Using the PTCDI-C18/ITO electrode, we fabricate a photoelectrochemical cell with the ITO/PTCDI-C18/Redox Electrolyte/Pt configuration. The electrochemical properties of this device are investigated as a function of hydroquinone (HQ) concentration, bias voltage, and wavelength of light. Anodic photocurrent is observed at V ≥ -0.2 V vs. Ag/AgCl, indicating that the PTCDI-C18 film acts as an n-type semiconductor as usual. However, when benzoquinone (BQ) is inserted into the electrolyte system instead of HQ, cathodic photocurrent is observed at V ≤ 0.0 V, displaying that PTCDI-C18 abnormally serves as a p-type semiconductor. Hence the overall results reveal that the PTCDI-C18 film can be an ambipolar functional semiconductor depending on the redox couple in the appropriate voltage.

  15. A study of junction effect transistors and their roles in carbon nanotube field emission cathodes in compact pulsed power applications

    Science.gov (United States)

    Shui, Qiong

    This thesis is focusing on a study of junction effect transistors (JFETs) in compact pulsed power applications. Pulsed power usually requires switches with high hold-off voltage, high current, low forward voltage drop, and fast switching speed. 4H-SiC, with a bandgap of 3.26 eV (The bandgap of Si is 1.12eV) and other physical and electrical superior properties, has gained much attention in high power, high temperature and high frequency applications. One topic of this thesis is to evaluate if 4H-SiC JFETs have a potential to replace gas phase switches to make pulsed power system compact and portable. Some other pulsed power applications require cathodes of providing stable, uniform, high electron-beam current. So the other topic of this research is to evaluate if Si JFET-controlled carbon nanotube field emitter cold cathode will provide the necessary e-beam source. In the topic of "4H-SiC JFETs", it focuses on the design and simulation of a novel 4H-SiC normally-off VJFET with high breakdown voltage using the 2-D simulator ATLAS. To ensure realistic simulations, we utilized reasonable physical models and the established parameters as the input into these models. The influence of key design parameters were investigated which would extend pulsed power limitations. After optimizing the key design parameters, with a 50-mum drift region, the predicted breakdown voltage for the VJFET is above 8kV at a leakage current of 1x10-5A/cm2 . The specific on-state resistance is 35 mO·cm 2 at VGS = 2.7 V, and the switching speed is several ns. The simulation results suggest that the 4H-SiC VJFET is a potential candidate for improving switching performance in repetitive pulsed power applications. To evaluate the 4H-SiC VJFETs in pulsed power circuits, we extracted some circuit model parameters from the simulated I-V curves. Those parameters are necessary for circuit simulation program such as SPICE. This method could be used as a test bench without fabricating the devices to

  16. Effect of substrate material on the growth and field emission characteristics of large-area carbon nanotube forests

    Energy Technology Data Exchange (ETDEWEB)

    Ummethala, Raghunandan; Täschner, Christine; Leonhardt, Albrecht; Büchner, Bernd [IFW Dresden, P.O. Box 270116, D-01171 Dresden (Germany); Wenger, Daniela; Tedde, Sandro F. [Siemens Healthcare GmbH, Technology Centre, Guenther-Scharowsky-Strasse 1, 91058 Erlangen (Germany); Eckert, Jürgen [Erich Schmid Institute of Materials Science, Austrian Academy of Sciences, Jahnstrasse 12, A-8700 Leoben (Austria); Department Materials Physics, Montanuniversität Leoben, Jahnstraße 12, A-8700 Leoben (Austria)

    2016-01-28

    Carbon nanotubes (CNTs) are a promising replacement for tungsten filaments as electron emitters in conventional x-ray sources, owing to their higher aspect ratio, superior mechanical stability, chemical inertness, and high electrical and thermal conductivities. Conditions for realizing the best emission behavior from CNTs have been formulated over the last few years. In this paper, we report the relatively less-investigated factor, namely, the influence of the nature of substrate material on the growth as well as field emission characteristics of large-area multiwalled CNTs for their practical application in medical x-ray sources. We compare the morphology of CNTs on a variety of substrates such as stainless steel, copper, molybdenum, graphite, few-layer graphene, and carbon nanowalls grown by thermal chemical vapor deposition following a simple drop-coating of catalyst. We find that CNTs grown on stainless steel and graphite show the best combination of emission characteristics under pulsed operation mode. These studies are helpful in selecting the optimum substrate material for field emission applications. Ex situ studies on field emission degradation of CNTs are presented towards the end.

  17. Effect of increased crystallinity of single-walled carbon nanotubes used as field emitters on their electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Shimoi, Norihiro, E-mail: shimoi@mail.kankyo.tohoku.ac.jp [Graduate School of Environmental Studies, Tohoku University, 6-6-20 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

    2015-12-07

    Single-walled carbon nanotubes (SWCNTs) synthesized by arc discharge are expected to exhibit good field emission (FE) properties at a low driving voltage. We used a coating containing homogeneously dispersed highly crystalline SWCNTs produced by a high-temperature annealing process to fabricate an FE device by a wet-coating process at a low cost. Using the coating, we succeeded in reducing the power consumption of field emitters for planar lighting devices. SWCNTs synthesized by arc discharge have crystal defects in the carbon network, which are considered to induce inelastic electron tunneling that deteriorates the electrical conductivity of the SWCNTs. In this study, the blocking of the transport of electrons in SWCNTs with crystal defects is simulated using an inelastic electron tunneling model. We succeeded in clarifying the mechanism underlying the electrical conductivity of SWCNTs by controlling their crystallinity. In addition, it was confirmed that field emitters using highly crystalline SWCNTs can lead to new applications operating with low power consumption and new devices that may change our daily lives in the future.

  18. Effect of substrate material on the growth and field emission characteristics of large-area carbon nanotube forests

    Science.gov (United States)

    Ummethala, Raghunandan; Wenger, Daniela; Tedde, Sandro F.; Täschner, Christine; Leonhardt, Albrecht; Büchner, Bernd; Eckert, Jürgen

    2016-01-01

    Carbon nanotubes (CNTs) are a promising replacement for tungsten filaments as electron emitters in conventional x-ray sources, owing to their higher aspect ratio, superior mechanical stability, chemical inertness, and high electrical and thermal conductivities. Conditions for realizing the best emission behavior from CNTs have been formulated over the last few years. In this paper, we report the relatively less-investigated factor, namely, the influence of the nature of substrate material on the growth as well as field emission characteristics of large-area multiwalled CNTs for their practical application in medical x-ray sources. We compare the morphology of CNTs on a variety of substrates such as stainless steel, copper, molybdenum, graphite, few-layer graphene, and carbon nanowalls grown by thermal chemical vapor deposition following a simple drop-coating of catalyst. We find that CNTs grown on stainless steel and graphite show the best combination of emission characteristics under pulsed operation mode. These studies are helpful in selecting the optimum substrate material for field emission applications. Ex situ studies on field emission degradation of CNTs are presented towards the end.

  19. Field emission from a composite structure consisting of vertically aligned single-walled carbon nanotubes and carbon nanocones

    International Nuclear Information System (INIS)

    Yeh, C M; Chen, M Y; Hwang, J; Gan, J-Y; Kou, C S

    2006-01-01

    Vertically aligned single-walled carbon nanotubes (VA-SWCNTs) have been fabricated on carbon nanocones (CNCs) in a gravity-assisted chemical vapour deposition (CVD) process. The CNCs with nanoscale Co particles at the top were first grown on the Co/Si(100) substrate biased at 350 V in a plasma enhanced chemical vapour deposition process. The CNCs typically are ∼200 nm in height, and their diameters are ∼100 nm near the bottom and ∼10 nm at the top. The nanoscale Co particles ∼10 nm in diameter act as catalysts which favour the growth of VA-SWCNTs out of CNCs at 850 0 C in the gravity-assisted CVD process. The average length and the growth time of VA-SWCNTs are ∼150 nm and 1.5 min, equivalent to a growth rate of ∼6 μm h -1 . The diameters of VA-SWCNTs are estimated to be 1.2-2.1 nm. When VA-SWCNTs are fabricated on CNCs, the turn-on voltage is reduced from 3.9 to 0.7 V μm -1 and the emission current density at the electric field of 5 V μm -1 is enhanced by a factor of more than 200. The composite VA-SWCNT/CNC structure is potentially an excellent field emitter. The emission stability of the VA-SWCNT/CNC field emitter is discussed

  20. Organic integrated circuits for information storage based on ambipolar polymers and charge injection engineering

    Science.gov (United States)

    Dell'Erba, Giorgio; Luzio, Alessandro; Natali, Dario; Kim, Juhwan; Khim, Dongyoon; Kim, Dong-Yu; Noh, Yong-Young; Caironi, Mario

    2014-04-01

    Ambipolar semiconducting polymers, characterized by both high electron (μe) and hole (μh) mobility, offer the advantage of realizing complex complementary electronic circuits with a single semiconducting layer, deposited by simple coating techniques. However, to achieve complementarity, one of the two conduction paths in transistors has to be suppressed, resulting in unipolar devices. Here, we adopt charge injection engineering through a specific interlayer in order to tune injection into frontier energy orbitals of a high mobility donor-acceptor co-polymer. Starting from field-effect transistors with Au contacts, showing a p-type unbalanced behaviour with μh = 0.29 cm2/V s and μe = 0.001 cm2/V s, through the insertion of a caesium salt interlayer with optimized thickness, we obtain an n-type unbalanced transistor with μe = 0.12 cm2/V s and μh = 8 × 10-4 cm2/V s. We applied this result to the development of the basic pass-transistor logic building blocks such as inverters, with high gain and good noise margin, and transmission-gates. In addition, we developed and characterized information storage circuits like D-Latches and D-Flip-Flops consisting of 16 transistors, demonstrating both their static and dynamic performances and thus the suitability of this technology for more complex circuits such as display addressing logic.

  1. Energy balance in the solar transition region. I - Hydrostatic thermal models with ambipolar diffusion

    Science.gov (United States)

    Fontenla, J. M.; Avrett, E. H.; Loeser, R.

    1990-01-01

    The energy balance in the lower transition region is analyzed by constructing theoretical models which satisfy the energy balance constraint. The energy balance is achieved by balancing the radiative losses and the energy flowing downward from the corona. This energy flow is mainly in two forms: conductive heat flow and hydrogen ionization energy flow due to ambipolar diffusion. Hydrostatic equilibrium is assumed, and, in a first calculation, local mechanical heating and Joule heating are ignored. In a second model, some mechanical heating compatible with chromospheric energy-balance calculations is introduced. The models are computed for a partial non-LTE approach in which radiation departs strongly from LTE but particles depart from Maxwellian distributions only to first order. The results, which apply to cases where the magnetic field is either absent, or uniform and vertical, are compared with the observed Lyman lines and continuum from the average quiet sun. The approximate agreement suggests that this type of model can roughly explain the observed intensities in a physically meaningful way, assuming only a few free parameters specified as chromospheric boundary conditions.

  2. Ambipolar gate effect and low temperature magnetoresistance of ultrathin La0.8Ca0.2MnO3 films.

    Science.gov (United States)

    Eblen-Zayas, M; Bhattacharya, A; Staley, N E; Kobrinskii, A L; Goldman, A M

    2005-01-28

    Ultrathin La(0.8)Ca(0.2)MnO(3) films have been measured in a field-effect geometry. The gate electric field produces a significant ambipolar decrease in resistance at low temperatures. This is attributed to the development of a pseudogap in the density of states and the coupling of localized charge to strain. Within a mixed phase scenario, the gate effect and magnetoresistance are interpreted in the framework of a "general susceptibility," which describes how phase boundaries move through a hierarchical pinning landscape.

  3. Improved field emission properties of carbon nanotubes grown on stainless steel substrate and its application in ionization gauge

    Energy Technology Data Exchange (ETDEWEB)

    Li, Detian; Cheng, Yongjun [Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000 (China); Wang, Yongjun, E-mail: wyjlxlz@163.com [Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000 (China); Zhang, Huzhong [Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000 (China); Dong, Changkun [Institute of Micro-Nano Structures and Optoelectronics, Wenzhou University, Wenzhou 325035 (China); Li, Da [Division of Advanced Nanomaterials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

    2016-03-01

    Graphical abstract: - Highlights: • The high quality CNT arrays were successfully grown on conductive stainless steel substrates. • The CNT array grown on stainless steel substrate exhibited superior field emission properties. • A high vacuum level about 10–8 Pa was measured by resultant CNT-based ionization gauge. • The ionization gauge with CNT cathode demonstrated a high stability. - Abstract: Vertically aligned carbon nanotube (CNT) arrays were fabricated by chemical vapor deposition (CVD) technique on different substrates. Microstructures and field emission characteristics of the as-grown CNT arrays were investigated systematically, and its application in ionization gauge was also evaluated preliminarily. The results indicate that the as-grown CNT arrays are vertically well-aligned relating to the substrate surfaces, but the CNTs grown on stainless steel substrate are longer and more crystalline than the ones grown on silicon wafer substrate. The field emission behaviors of the as-grown CNT arrays are strongly dependent upon substrate properties. Namely, the CNT array grown on stainless steel substrate has better field emission properties, including lower turn on and threshold fields, better emission stability and repeatability, compared with the one grown on silicon wafer substrate. The superior field emission properties of the CNT array grown on stainless steel substrate are mainly attributed to low contact resistance, high thermal conductivity, good adhesion strength, etc. In addition, the metrological behaviors of ionization gauge with the CNT array grown on stainless steel substrate as an electron source were investigated, and this novel cathode ionization gauge extends the lower limit of linear pressure measurement to 10{sup −8} Pa, which is one order of magnitude lower than the result reported for the same of gauge with CNT cathode.

  4. Enhancement of electron emission and long-term stability of tip-type carbon nanotube field emitters via lithium coating

    International Nuclear Information System (INIS)

    Kim, Jong-Pil; Chang, Han-Beet; Kim, Bu-Jong; Park, Jin-Seok

    2013-01-01

    Carbon nanotubes (CNTs) were deposited on conical tip-type substrates via electrophoresis and coated with lithium (Li) thin films with diverse thicknesses via electroplating. For the as-deposited (i.e., without Li coating) CNT, the turn-on (or triggering) electric field was 0.92 V/μm, and the emission current, which was generated at an applied field of 1.2 V/μm was 56 μA. In the case of the 4.7 nm-thick Li-coated CNT, the turn-on field decreased to 0.65 V/μm and the emission current at the same applied field increased more than ten times to 618 μA. The analysis based on the Kelvin probe measurement and Fowler–Nordheim theory indicated that the coating of Li caused a loss in the structural-aspect-ratio of the CNTs and it reduced their effective work functions from 5.36 eV to 4.90 eV, which led to a great improvement of their electron emission characteristics. The results obtained in this study also showed that the long-term emission stability could be enhanced by the coating of thin Li films on CNTs. - Highlights: ► CNTs are deposited via electrophoretic deposition (EPD). ► Thin films of Li are coated on CNTs via electroplating, without plasma damage. ► Li coating enhanced field emission properties and emission stability of CNTs. ► The effective work functions and field enhancement factors of CNTs are evaluated

  5. Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors.

    Science.gov (United States)

    Yoo, Hocheon; Ghittorelli, Matteo; Lee, Dong-Kyu; Smits, Edsger C P; Gelinck, Gerwin H; Ahn, Hyungju; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

    2017-07-10

    Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors.

  6. Vertically aligned carbon nanotube field emitter arrays with Ohmic base contact to silicon by Fe-catalyzed chemical vapor deposition

    NARCIS (Netherlands)

    Morassutto, M.; Tiggelaar, Roald M.; Smithers, M.A.; Smithers, M.A.; Gardeniers, Johannes G.E.

    2016-01-01

    Abstract In this study, dense arrays of aligned carbon nanotubes are obtained by thermal catalytic chemical vapor deposition, using Fe catalyst dispersed on a thin Ta layer. Alignment of the carbon nanotubes depends on the original Fe layer thickness from which the catalyst dispersion is obtained by

  7. Polymer nanotube nanocomposites: synthesis, properties, and applications

    National Research Council Canada - National Science Library

    Mittal, Vikas

    2010-01-01

    ... in these commercially important areas of polymer technology. It sums up recent advances in nanotube composite synthesis technology, provides basic introduction to polymer nanotubes nanocomposite technology for the readers new to this field, provides valuable...

  8. Ultrahigh Carrier Mobility Achieved in Photoresponsive Hybrid Perovskite Films via Coupling with Single-Walled Carbon Nanotubes

    KAUST Repository

    Li, Feng; Wang, Hong; Kufer, Dominik; Liang, Liangliang; Yu, Weili; Alarousu, Erkki; Ma, Chun; Li, Yangyang; Liu, Zhixiong; Liu, Changxu; Wei, Nini; Wang, Fei; Chen, Lang; Mohammed, Omar F.; Fratalocchi, Andrea; Liu, Xiaogang; Konstantatos, Gerasimos; Wu, Tao

    2017-01-01

    Organolead trihalide perovskites have drawn substantial interest for photovoltaic and optoelectronic applications due to their remarkable physical properties and low processing cost. However, perovskite thin films suffer from low carrier mobility as a result of their structural imperfections such as grain boundaries and pinholes, limiting their device performance and application potential. Here we demonstrate a simple and straightforward synthetic strategy based on coupling perovskite films with embedded single-walled carbon nanotubes. We are able to significantly enhance the hole and electron mobilities of the perovskite film to record-high values of 595.3 and 108.7 cm(2) V(-1) s(-1) , respectively. Such a synergistic effect can be harnessed to construct ambipolar phototransistors with an ultrahigh detectivity of 3.7 × 10(14) Jones and a responsivity of 1 × 10(4) A W(-1) , on a par with the best devices available to date. The perovskite/carbon nanotube hybrids should provide a platform that is highly desirable for fields as diverse as optoelectronics, solar energy conversion, and molecular sensing.

  9. Ultrahigh Carrier Mobility Achieved in Photoresponsive Hybrid Perovskite Films via Coupling with Single-Walled Carbon Nanotubes

    KAUST Repository

    Li, Feng

    2017-02-22

    Organolead trihalide perovskites have drawn substantial interest for photovoltaic and optoelectronic applications due to their remarkable physical properties and low processing cost. However, perovskite thin films suffer from low carrier mobility as a result of their structural imperfections such as grain boundaries and pinholes, limiting their device performance and application potential. Here we demonstrate a simple and straightforward synthetic strategy based on coupling perovskite films with embedded single-walled carbon nanotubes. We are able to significantly enhance the hole and electron mobilities of the perovskite film to record-high values of 595.3 and 108.7 cm(2) V(-1) s(-1) , respectively. Such a synergistic effect can be harnessed to construct ambipolar phototransistors with an ultrahigh detectivity of 3.7 × 10(14) Jones and a responsivity of 1 × 10(4) A W(-1) , on a par with the best devices available to date. The perovskite/carbon nanotube hybrids should provide a platform that is highly desirable for fields as diverse as optoelectronics, solar energy conversion, and molecular sensing.

  10. Thermoelectric power in ultrathin films, quantum wires and carbon nanotubes under classically large magnetic field: Simplified theory and relative comparison

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A.; Choudhury, S. [Electronics and Communication Engineering, Sikkim Manipal Institute of Technology, Majitar, East Sikkim 737 132 (India); Saha, S. [Electronics and Communication Engineering, Mallabhum Institute of Technology College Campus, Brajaradhanagar, P.O. Gosaipur, P.S. Bishnupur, District - Bankura 722 122 (India); Pahari, S. [Administration Department, Jadavpur University, Kolkata 700 032 (India); De, D. [Department of Computer Science Engineering, West Bengal University of Technology, BF 142, Sector 1, Kolkatta 700 064, West Bengal (India); Bhattacharya, S. [Nano Scale Device Research Laboratory, Center for Electronics Design and Technology, Indian Institute of Science, Bangalore 560 012 (India); Ghatak, K.P., E-mail: kamakhyaghatak@yahoo.co.i [Department of Electronic Science, University Calcutta, 92 Acharyya Prafulla Chandra Road, Kolkata 700 009 (India)

    2010-01-01

    We study the thermoelectric power under classically large magnetic field (TPM) in ultrathin films (UFs), quantum wires (QWs) of non-linear optical materials on the basis of a newly formulated electron dispersion law considering the anisotropies of the effective electron masses, the spin-orbit splitting constants and the presence of the crystal field splitting within the framework of k.p formalism. The results of quantum confined III-V compounds form the special cases of our generalized analysis. The TPM has also been studied for quantum confined II-VI, stressed materials, bismuth and carbon nanotubes (CNs) on the basis of respective dispersion relations. It is found taking quantum confined CdGeAs{sub 2}, InAs, InSb, CdS, stressed n-InSb and Bi that the TPM increases with increasing film thickness and decreasing electron statistics exhibiting quantized nature for all types of quantum confinement. The TPM in CNs exhibits oscillatory dependence with increasing carrier concentration and the signature of the entirely different types of quantum systems are evident from the plots. Besides, under certain special conditions, all the results for all the materials gets simplified to the well-known expression of the TPM for non-degenerate materials having parabolic energy bands, leading to the compatibility test.

  11. Donor impurity in nanotube with two GaAs/GaAlAs quantum wells: Magnetic field effects

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez, J D; Escorcia, R; Sierra-Ortega, J, E-mail: jdavid0831@gmail.co [Grupo de Investigacion en teorIa de la Materia Condensada, Universidad del Magdalena, A.A. 731, Santa Marta (Colombia)

    2009-05-01

    Micro-tubes containing two GaAs/GaAlAs quantum wells (QWs) in a section of the tube layer has been fabricated and optical properties of the embedded QWs has been studied. The ground state binding energy of an off-axis donor in a cylindrical nanotube, containing two GaAs/GaAlAs quantum wells (QWs) in the presence of a uniform magnetic field is calculated as a function of the donor location as well as the density of states. A trial function for describing the asymmetric electron charge distribution is taken as a product of the combination of 1s and 2p{sub x,y} subband wave functions and an unknown function that depends only on electron-ion separation. We found that the increasing the magnetic field the increasing the binding energy while the impurity is located in the QW1, whereas the opposite occurs when the impurity is located in the QW2. Two peaks in the curves of the binding energy, as a function of the impurity position, are also found as well as in the density of impurity states.

  12. Flutter instability of cantilevered carbon nanotubes caused by magnetic fluid flow subjected to a longitudinal magnetic field

    Science.gov (United States)

    Sadeghi-Goughari, Moslem; Jeon, Soo; Kwon, Hyock-Ju

    2018-04-01

    CNT (Carbon nanotube)-based fluidic systems hold a great potential for emerging medical applications such as drug delivery for cancer therapy. CNTs can be used to deliver anticancer drugs into a target site under a magnetic field guidance. One of the critical issues in designing such systems is how to avoid the vibration induced by the fluid flow, which is undesirable and may even promote the structural instability. The main objective of the present research is to develop a fluid structure interaction (FSI) model to investigate the flutter instability of a cantilevered CNT induced by a magnetic fluid flow under a longitudinal magnetic field. The CNT is assumed to be embedded in a viscoelastic matrix to consider the effect of biological medium around it. To obtain a dynamical model for the system, the Navier-Stokes theory of magnetic-fluid flow is coupled to the Euler-Bernoulli beam model for CNT. The small size effects of the magnetic fluid and CNT are considered through the small scale parameters including Knudsen number (Kn) and the nonlocal parameter. Then, the extended Galerkin's method is applied to solve the FSI governing equations, and to derive the stability diagrams of the system. Results show how the magnetic properties of the fluid flow have an effect on improving the stability of the cantilevered CNT by increasing the flutter velocity.

  13. Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon assisted tunneling

    OpenAIRE

    Koswatta, Siyuranga O.; Lundstrom, Mark S.; Nikonov, Dmitri E.

    2007-01-01

    Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the non-equilibrium Green's functions formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (Y. Lu et al, J. Am. Chem. Soc.,...

  14. Dithienocoronenediimide-based copolymers as novel ambipolar semiconductors for organic thin-film transistors.

    Science.gov (United States)

    Usta, Hakan; Newman, Christopher; Chen, Zhihua; Facchetti, Antonio

    2012-07-17

    A new class of ambipolar donor-acceptor π-conjugated polymers based on a dithienocoronenediimide core is presented. Solution-processed top-gate/bottom-contact thin film transistors (TFTs) exhibit electron and hole mobilities of up to 0.30 cm(2)/V·s and 0.04 cm(2)/V·s, respectively, which are the highest reported to date for an ambipolar polymer in ambient conditions. The polymers presented here are the first examples of coronenediimide-based semiconductors showing high organic TFT performances. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. An efficient strategy for designing ambipolar organic semiconductor material: Introducing dehydrogenated phosphorus atoms into pentacene core

    Science.gov (United States)

    Tang, Xiao-Dan

    2017-09-01

    The charge transport properties of phosphapentacene (P-PEN) derivatives were systematically explored by theoretical calculation. The dehydrogenated P-PENs have reasonable frontier molecular orbital energy levels to facilitate both electron and hole injection. The reduced reorganization energies of dehydrogenated P-PENs could be intimately connected to the bonding nature of phosphorus atoms. From the idea of homology modeling, the crystal structure of TIPSE-4P-2p is constructed and fully optimized. Fascinatingly, TIPSE-4P-2p shows the intrinsic property of ambipolar transport in both hopping and band models. Thus, introducing dehydrogenated phosphorus atoms into pentacene core could be an efficient strategy for designing ambipolar material.

  16. Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

    International Nuclear Information System (INIS)

    Han, Jinhua; Wang, Wei; Ying, Jun; Xie, Wenfa

    2014-01-01

    An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized

  17. Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jinhua; Wang, Wei, E-mail: wwei99@jlu.edu.cn; Ying, Jun; Xie, Wenfa [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

    2014-01-06

    An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized.

  18. Magnetization measurement of single La0.67Ca0.33MnO3 nanotubes in perpendicular magnetic fields using a micromechanical torsional oscillator

    International Nuclear Information System (INIS)

    Antonio, D.; Dolz, M.I.; Pastoriza, H.

    2010-01-01

    Using a silicon micromechanical resonator as a sensitive magnetometer, the authors have studied both experimentally and theoretically the magnetic behavior of two isolated ferromagnetic nanotubes of perovskite La 0.67 Ca 0.33 MnO 3 . The article investigates the specific configuration where a magnetic field H is applied perpendicular to the magnetic easy axis of an isolated nanotube characterized by an uniaxial anisotropy constant K. In this situation, the magnetization M reduces the effective elastic constant k M of the resonator. This softening of the mechanical system is opposed to the hardening effect of M observed in a previous work, where H was applied parallel to the easy axis. Moreover, in this magnetic field configuration two distinct magnetization regimes are manifested, depending on the magnitude of H. For H>>2K/M the magnetization is almost parallel to the applied magnetic field and for H<<2K/M it is almost parallel to the easy axis of the nanotube. At a certain value of H there is a sharp transition from one regime to the other, accompanied by a peak in the energy dissipation.

  19. Analysis of the mechanical behavior of single wall carbon nanotubes by a modified molecular structural mechanics model incorporating an advanced chemical force field

    Science.gov (United States)

    Eberhardt, Oliver; Wallmersperger, Thomas

    2018-03-01

    The outstanding properties of carbon nanotubes (CNTs) keep attracting the attention of researchers from different fields. CNTs are promising candidates for applications e.g. in lightweight construction but also in electronics, medicine and many more. The basis for the realization of the manifold applications is a detailed knowledge of the material properties of the carbon nanotubes. In particular for applications in lightweight constructions or in composites, the knowledge of the mechanical behavior of the CNTs is of vital interest. Hence, a lot of effort is put into the experimental and theoretical determination of the mechanical material properties of CNTs. Due to their small size, special techniques have to be applied. In this research, a modified molecular structural mechanics model for the numerical determination of the mechanical behavior of carbon nanotubes is presented. It uses an advanced approach for the geometrical representation of the CNT structure while the covalent bonds in the CNTs are represented by beam elements. Furthermore, the model is specifically designed to overcome major drawbacks in existing molecular structural mechanics models. This includes energetic consistency with the underlying chemical force field. The model is developed further to enable the application of a more advanced chemical force field representation. The developed model is able to predict, inter alia, the lateral and radial stiffness properties of the CNTs. The results for the lateral stiffness are given and discussed in order to emphasize the progress made with the presented approach.

  20. Effects of an electric field on the electronic and optical properties of zigzag boron nitride nanotubes

    Science.gov (United States)

    Chegel, Raad; Behzad, Somayeh

    2011-02-01

    We have investigated the electro-optical properties of zigzag BNNTs, under an external electric field, using the tight binding approximation. It is found that an electric field modifies the band structure and splits the band degeneracy. Also the large electric strength leads to coupling the neighbor subbands which these effects reflect in the DOS and JDOS spectrum. It has been shown that, unlike CNTs, the band gap of BNNTs can be reduced linearly by applying a transverse external electric field. Also we show that the larger diameter tubes are more sensitive than small ones. The semiconducting metallic transition can be achieved through increasing the applied fields. The number and position of peaks in the JDOS spectrum are dependent on electric field strength. It is found that at a high electric field, the two lowest subbands are oscillatory with multiple nodes at the Fermi level.

  1. Synthesis of MoS₂ nano-petal forest supported on carbon nanotubes for enhanced field emission performance

    Energy Technology Data Exchange (ETDEWEB)

    Murawala, Aditya P.; Loh, Tamie A. J.; Chua, Daniel H. C., E-mail: msechcd@nus.edu.sg [Department of Materials Science and Engineering, National University of Singapore, Singapore 117576 (Singapore)

    2014-09-21

    We report the fabrication of a three-dimensional forest of highly crystalline two-dimensional (2D) molybdenum disulfide (MoS₂) nano-petals encapsulating vertically aligned carbon nanotubes (CNT) in a core-shell configuration. Growth was conducted via magnetron sputtering at room temperature and it was found that the nano-petal morphology was formed only when a critical threshold in sputter deposition time was reached. Below this threshold, an amorphous tubular structure composed of mainly molybdenum oxides dominates instead. The presence of the MoS₂ nano-petals was shown to impart photoluminescence to the CNTs, in addition to significantly enhancing their electron emission properties, where the turn-on field was lowered from 2.50 Vμm⁻¹ for pristine CNTs to 0.80 Vμm⁻¹ for MoS₂-CNT heterostructures fabricated at 30 min sputter deposition time. Photoluminescence was detected at wavelengths of approximately 684 nm and 615 nm, with the band at 684 nm gradually blue-shifting as sputter time was increased. These results demonstrate that it is possible to synthesize 2D MoS₂ layers without the need for chemical routes and high growth temperatures.

  2. Controlled Growth of Carbon Nanotubes on Micropatterned Au/Cr Composite Film and Field Emission from Their Arrays

    Science.gov (United States)

    Kamide, Koichi; Araki, Hisashi; Yoshino, Katsumi

    2003-12-01

    Carbon nanotube (CNT) arrays with a controlled density are prepared on a micropatterned Au/Cr composite film formed on a quartz glass plate by pyrolysis of Ni-phthalocyanine at 800°C. It is clarified from characteristic X-ray analyses for those samples that a catalytic Ni nanoparticle is not contained within the base of the whisker-like CNT in contrast to that of the bamboo-like CNT, suggesting that the growth process of the present novel CNT is incompatible with that of the bamboo-like CNT. In the Au/Cr composite film, both the Cr atomic content of approximately 30% and the presence of the Ni catalyst devoid of a particle-like shape are important factors for the growth of CNTs. Field emission from the novel CNT arrays exhibits a lower turn-on voltage and a higher current density compared with that from the bamboo-like arrays formed on a quartz plate.

  3. Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges

    International Nuclear Information System (INIS)

    Moriyama, N; Ohno, Y; Kitamura, T; Kishimoto, S; Mizutani, T

    2010-01-01

    We study the phenomenon of change in carrier type in carbon nanotube field-effect transistors (CNFETs) caused by the atomic layer deposition (ALD) of a HfO 2 gate insulator. When a HfO 2 layer is deposited on a CNFET, the type of carrier changes from p-type to n-type. The so-obtained n-type device has good performance and stability in air. The conductivity of such a device with a channel length of 0.7 μm is 11% of the quantum conductance 4e 2 /h. The contact resistance for electron current is estimated to be 14 kΩ. The n-type conduction of this CNFET is maintained for more than 100 days. The change in carrier type is attributed to positive fixed charges introduced at the interface between the HfO 2 and SiO 2 layers. We also propose a novel technique to control the type of conduction by utilizing interface fixed charges; this technique is compatible with Si CMOS process technology.

  4. Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors

    Science.gov (United States)

    Jung, Haesun; Choi, Sungju; Jang, Jun Tae; Yoon, Jinsu; Lee, Juhee; Lee, Yongwoo; Rhee, Jihyun; Ahn, Geumho; Yu, Hye Ri; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan

    2018-02-01

    We propose a universal model for bias-stress (BS)-induced instability in the inkjet-printed carbon nanotube (CNT) networks used in field-effect transistors (FETs). By combining two experimental methods, i.e., a comparison between air and vacuum BS tests and interface trap extraction, BS instability is explained regardless of either the BS polarity or ambient condition, using a single platform constituted by four key factors: OH- adsorption/desorption followed by a change in carrier concentration, electron concentration in CNT channel corroborated with H2O/O2 molecules in ambient, charge trapping/detrapping, and interface trap generation. Under negative BS (NBS), the negative threshold voltage shift (ΔVT) is dominated by OH- desorption, which is followed by hole trapping in the interface and/or gate insulator. Under positive BS (PBS), the positive ΔVT is dominated by OH- adsorption, which is followed by electron trapping in the interface and/or gate insulator. This instability is compensated by interface trap extraction; PBS instability is slightly more complicated than NBS instability. Furthermore, our model is verified using device simulation, which gives insights on how much each mechanism contributes to BS instability. Our result is potentially useful for the design of highly stable CNT-based flexible circuits in the Internet of Things wearable healthcare era.

  5. Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.

    Science.gov (United States)

    Luo, Hao; Liang, Lingyan; Cao, Hongtao; Dai, Mingzhi; Lu, Yicheng; Wang, Mei

    2015-08-12

    For ultrathin semiconductor channels, the surface and interface nature are vital and often dominate the bulk properties to govern the field-effect behaviors. High-performance thin-film transistors (TFTs) rely on the well-defined interface between the channel and gate dielectric, featuring negligible charge trap states and high-speed carrier transport with minimum carrier scattering characters. The passivation process on the back-channel surface of the bottom-gate TFTs is indispensable for suppressing the surface states and blocking the interactions between the semiconductor channel and the surrounding atmosphere. We report a dielectric layer for passivation of the back-channel surface of 20 nm thick tin monoxide (SnO) TFTs to achieve ambipolar operation and complementary metal oxide semiconductor (CMOS) like logic devices. This chemical passivation reduces the subgap states of the ultrathin channel, which offers an opportunity to facilitate the Fermi level shifting upward upon changing the polarity of the gate voltage. With the advent of n-type inversion along with the pristine p-type conduction, it is now possible to realize ambipolar operation using only one channel layer. The CMOS-like logic inverters based on ambipolar SnO TFTs were also demonstrated. Large inverter voltage gains (>100) in combination with wide noise margins are achieved due to high and balanced electron and hole mobilities. The passivation also improves the long-term stability of the devices. The ability to simultaneously achieve field-effect inversion, electrical stability, and logic function in those devices can open up possibilities for the conventional back-channel surface passivation in the CMOS-like electronics.

  6. Nanotubes on Display: How Carbon Nanotubes Can Be Integrated into Electronic Displays

    KAUST Repository

    Opatkiewicz, Justin; LeMieux, Melburne C.; Bao, Zhenan

    2010-01-01

    Random networks of single-walled carbon nanotubes show promise for use in the field of flexible electronics. Nanotube networks have been difficult to utilize because of the mixture of electronic types synthesized when grown. A variety of separation

  7. Incorporating a hybrid urease-carbon nanotubes sensitive nanofilm on capacitive field-effect sensors for urea detection.

    Science.gov (United States)

    Siqueira, José R; Molinnus, Denise; Beging, Stefan; Schöning, Michael J

    2014-06-03

    The ideal combination among biomolecules and nanomaterials is the key for reaching biosensing units with high sensitivity. The challenge, however, is to find out a stable and sensitive film architecture that can be incorporated on the sensor's surface. In this paper, we report on the benefits of incorporating a layer-by-layer (LbL) nanofilm of polyamidoamine (PAMAM) dendrimer and carbon nanotubes (CNTs) on capacitive electrolyte-insulator-semiconductor (EIS) field-effect sensors for detecting urea. Three sensor arrangements were studied in order to investigate the adequate film architecture, involving the LbL film with the enzyme urease: (i) urease immobilized directly onto a bare EIS [EIS-urease] sensor; (ii) urease atop the LbL film over the EIS [EIS-(PAMAM/CNT)-urease] sensor; and (iii) urease sandwiched between the LbL film and another CNT layer [EIS-(PAMAM/CNT)-urease-CNT]. The surface morphology of all three urea-based EIS biosensors was investigated by atomic force microscopy (AFM), while the biosensing abilities were studied by means of capacitance-voltage (C/V) and dynamic constant-capacitance (ConCap) measureaments at urea concentrations ranging from 0.1 mM to 100 mM. The EIS-urease and EIS-(PAMAM/CNT)-urease sensors showed similar sensitivity (~18 mV/decade) and a nonregular signal behavior as the urea concentration increased. On the other hand, the EIS-(PAMAM/CNT)-urease-CNT sensor exhibited a superior output signal performance and higher sensitivity of about 33 mV/decade. The presence of the additional CNT layer was decisive to achieve a urea based EIS sensor with enhanced properties. Such sensitive architecture demonstrates that the incorporation of an adequate hybrid enzyme-nanofilm as sensing unit opens new prospects for biosensing applications using the field-effect sensor platform.

  8. Associating biosensing properties with the morphological structure of multilayers containing carbon nanotubes on field-effect devices

    Energy Technology Data Exchange (ETDEWEB)

    Siqueira, Jose R. Jr. [Instituto de Fisica de Sao Carlos, Universidade de Sao Paulo, Sao Carlos (Brazil); Institute of Nano- and Biotechnologies, Aachen University of Applied Sciences, Juelich (Germany); Institute of Bio- and Nanosystems (IBN-2), Research Centre Juelich (Germany); Baecker, Matthias; Poghossian, Arshak; Schoening, Michael J. [Institute of Nano- and Biotechnologies, Aachen University of Applied Sciences, Juelich (Germany); Institute of Bio- and Nanosystems (IBN-2), Research Centre Juelich (Germany); Zucolotto, Valtencir; Oliveira, Osvaldo N. Jr. [Instituto de Fisica de Sao Carlos, Universidade de Sao Paulo, Sao Carlos (Brazil)

    2010-04-15

    The control of molecular architecture provided by the layer-by-layer (LbL) technique has led to enhanced biosensors, in which advantageous features of distinct materials can be combined. Full optimization of biosensing performance, however, is only reached if the film morphology is suitable for the principle of detection of a specific biosensor. In this paper, we report a detailed morphology analysis of LbL films made with alternating layers of single-walled carbon nanotubes (SWNTs) and polyamidoamine (PAMAM) dendrimers, which were then covered with a layer of penicillinase (PEN). An optimized performance to detect penicillin G was obtained with 6-bilayer SWNT/PAMAM LbL films deposited on p-Si-SiO{sub 2}-Ta{sub 2}O{sub 5} chips, used in biosensors based on a capacitive electrolyte-insulator-semiconductor (EIS) and a light-addressable potentiometric sensor (LAPS) structure, respectively. Field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) images indicated that the LbL films were porous, with a large surface area due to interconnection of SWNT into PAMAM layers. This morphology was instrumental for the adsorption of a larger quantity of PEN, with the resulting LbL film being highly stable. The experiments to detect penicillin were performed with constant-capacitance (ConCap) and constant-current (CC) measurements for EIS and LAPS sensors, respectively, which revealed an enhanced detection signal and sensitivity of ca. 100 mV/decade for the field-effect sensors modified with the PAMAM/SWNT LbL film. It is concluded that controlling film morphology is essential for an enhanced performance of biosensors, not only in terms of sensitivity but also stability and response time. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  9. Boosting the ambipolar performance of solution-processable polymer semiconductors via hybrid side-chain engineering.

    Science.gov (United States)

    Lee, Junghoon; Han, A-Reum; Yu, Hojeong; Shin, Tae Joo; Yang, Changduk; Oh, Joon Hak

    2013-06-26

    Ambipolar polymer semiconductors are highly suited for use in flexible, printable, and large-area electronics as they exhibit both n-type (electron-transporting) and p-type (hole-transporting) operations within a single layer. This allows for cost-effective fabrication of complementary circuits with high noise immunity and operational stability. Currently, the performance of ambipolar polymer semiconductors lags behind that of their unipolar counterparts. Here, we report on the side-chain engineering of conjugated, alternating electron donor-acceptor (D-A) polymers using diketopyrrolopyrrole-selenophene copolymers with hybrid siloxane-solubilizing groups (PTDPPSe-Si) to enhance ambipolar performance. The alkyl spacer length of the hybrid side chains was systematically tuned to boost ambipolar performance. The optimized three-dimensional (3-D) charge transport of PTDPPSe-Si with pentyl spacers yielded unprecedentedly high hole and electron mobilities of 8.84 and 4.34 cm(2) V(-1) s(-1), respectively. These results provide guidelines for the molecular design of semiconducting polymers with hybrid side chains.

  10. Asymmetric split-gate ambipolar transistor and its circuit application to complementary inverter

    NARCIS (Netherlands)

    Yoo, H.; Smits, E.C.P.; van Breemen, A.J.J.M.; van der Steen, J.L.; Torricelli, F.; Ghittorelli, M.; Lee, J.; Gelinck, G.; Kim, J.-J.

    2016-01-01

    Using a concept of asymmetric side gate and main gate, it is shown that it is possible to realize unipolar transport (both p-type and n-type) in a thin-film transistor with a high-performance ambipolar polymer semiconductor. In a complementary inverter, this results in higher noise margin and DC

  11. Air-stable complementary-like circuits based on organic ambipolar transistors

    NARCIS (Netherlands)

    Anthopoulos, Thomas D.; Setayesh, Sepas; Smits, Edsger; Cantatore, Eugenio; Boer ,de Bert; Blom, Paul W. M.; de Leeuw, Dago M.; Cölle, Michael

    2006-01-01

    Air stable complementary-like circuits, such as voltage inverters (see figure) and ring oscillators, are fabricated using ambipolar organic transistors based on a nickel dithiolene derivative. In addition to the complementary-like character of the circuits, the technology is very simple and fully

  12. Organic integrated circuits for information storage based on ambipolar polymers and charge injection engineering

    Energy Technology Data Exchange (ETDEWEB)

    Dell' Erba, Giorgio; Natali, Dario [Center for Nano Science and Technology PoliMi, Istituto Italiano di Tecnologia, Via Pascoli 70/3, 20133 Milano (Italy); Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milano (Italy); Luzio, Alessandro; Caironi, Mario, E-mail: mario.caironi@iit.it, E-mail: yynoh@dongguk.edu [Center for Nano Science and Technology PoliMi, Istituto Italiano di Tecnologia, Via Pascoli 70/3, 20133 Milano (Italy); Kim, Juhwan; Khim, Dongyoon; Kim, Dong-Yu [Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of); Noh, Yong-Young, E-mail: mario.caironi@iit.it, E-mail: yynoh@dongguk.edu [Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul 100-715 (Korea, Republic of)

    2014-04-14

    Ambipolar semiconducting polymers, characterized by both high electron (μ{sub e}) and hole (μ{sub h}) mobility, offer the advantage of realizing complex complementary electronic circuits with a single semiconducting layer, deposited by simple coating techniques. However, to achieve complementarity, one of the two conduction paths in transistors has to be suppressed, resulting in unipolar devices. Here, we adopt charge injection engineering through a specific interlayer in order to tune injection into frontier energy orbitals of a high mobility donor-acceptor co-polymer. Starting from field-effect transistors with Au contacts, showing a p-type unbalanced behaviour with μ{sub h} = 0.29 cm{sup 2}/V s and μ{sub e} = 0.001 cm{sup 2}/V s, through the insertion of a caesium salt interlayer with optimized thickness, we obtain an n-type unbalanced transistor with μ{sub e} = 0.12 cm{sup 2}/V s and μ{sub h} = 8 × 10{sup −4} cm{sup 2}/V s. We applied this result to the development of the basic pass-transistor logic building blocks such as inverters, with high gain and good noise margin, and transmission-gates. In addition, we developed and characterized information storage circuits like D-Latches and D-Flip-Flops consisting of 16 transistors, demonstrating both their static and dynamic performances and thus the suitability of this technology for more complex circuits such as display addressing logic.

  13. Miniature X-ray Tube for Electric Brachytherapy using Carbon Nanotube Field Emitter

    International Nuclear Information System (INIS)

    Heo, Sung Hwan; Kim, Hyun Jin; Ha, Jun Mok; Cho, Sung Oh

    2011-01-01

    An electric brachytherapy using a miniature x-ray tube has a major advantage to reduce the x-ray exposure of human body during the cancer radiation therapy by optimal positioning of x-ray radiation source and treatment objectives. In the view of a smaller electronic x-ray source, the CNT field emitter based xray tube can be more minimized than thermionic filament emitter based one because of a simple power supplier connection of cold field emission in diode type as well as a higher electron emission brightness of CNT. This abstract is for introducing the design of a prototype CNT field emitter based miniature x-ray tube. We have vacuum sealed CNT miniature x-ray tube with 7∼10 mm diameter, and characteristics of electron emission and x-ray transportation using MCNP5 code are surveyed

  14. Deduction of work function of carbon nanotube field emitter by use of curved-surface theory

    International Nuclear Information System (INIS)

    Edgcombe, C J; Jonge, N de

    2007-01-01

    The theory given earlier for field emission from a curved surface has been extended to use the parameter d characterizing the energy distribution. Measurement of the curvature of the Fowler-Nordheim plot together with d for the same emitter enables the work function of the surface to be deduced, together with emitter radius, notional surface field, effective solid angle of emission and supply factor. For this calculation an assumed form of potential distribution was used, but it is desirable to repeat the calculation with a potential obtained from atomic-scale simulation

  15. Transparent conducting oxide nanotubes

    Science.gov (United States)

    Alivov, Yahya; Singh, Vivek; Ding, Yuchen; Nagpal, Prashant

    2014-09-01

    Thin film or porous membranes made of hollow, transparent, conducting oxide (TCO) nanotubes, with high chemical stability, functionalized surfaces and large surface areas, can provide an excellent platform for a wide variety of nanostructured photovoltaic, photodetector, photoelectrochemical and photocatalytic devices. While large-bandgap oxide semiconductors offer transparency for incident light (below their nominal bandgap), their low carrier concentration and poor conductivity makes them unsuitable for charge conduction. Moreover, materials with high conductivity have nominally low bandgaps and hence poor light transmittance. Here, we demonstrate thin films and membranes made from TiO2 nanotubes heavily-doped with shallow Niobium (Nb) donors (up to 10%, without phase segregation), using a modified electrochemical anodization process, to fabricate transparent conducting hollow nanotubes. Temperature dependent current-voltage characteristics revealed that TiO2 TCO nanotubes, doped with 10% Nb, show metal-like behavior with resistivity decreasing from 6.5 × 10-4 Ωcm at T = 300 K (compared to 6.5 × 10-1 Ωcm for nominally undoped nanotubes) to 2.2 × 10-4 Ωcm at T = 20 K. Optical properties, studied by reflectance measurements, showed light transmittance up to 90%, within wavelength range 400 nm-1000 nm. Nb doping also improves the field emission properties of TCO nanotubes demonstrating an order of magnitude increase in field-emitter current, compared to undoped samples.

  16. Fast-to-Alfvén Mode Conversion in the Presence of Ambipolar Diffusion

    Science.gov (United States)

    Cally, Paul S.; Khomenko, Elena

    2018-03-01

    It is known that fast magnetohydrodynamic waves partially convert to upward and/or downward propagating Alfvén waves in a stratified atmosphere where Alfvén speed increases with height. This happens around the fast wave reflection height, where the fast wave’s horizontal phase speed equals the Alfvén speed (in a low-β plasma). Typically, this takes place in the mid to upper solar chromosphere for low-frequency waves in the few-millihertz band. However, this region is weakly ionized and thus susceptible to nonideal MHD processes. In this article, we explore how ambipolar diffusion in a zero-β plasma affects fast waves injected from below. Classical ambipolar diffusion is far too weak to have any significant influence at these low frequencies, but if enhanced by turbulence (in the quiet-Sun chromosphere but not in sunspot umbrae) or the production of sufficiently small-scale structure, can substantially absorb waves for turbulent ambipolar Reynolds numbers of around 20 or less. In that case, it is found that the mode conversion process is not qualitatively altered from the ideal case, though conversion to Alfvén waves is reduced because the fast wave flux reaching the conversion region is degraded. It is also found that any upward propagating Alfvén waves generated in this process are almost immune to further ambipolar attenuation, thereby reducing local ambipolar heating compared to cases without mode conversion. In that sense, mode conversion provides a form of “Alfvén cooling.”

  17. A Platform to Optimize the Field Emission Properties of Carbon Nanotube Based Fibers (Postprint)

    Science.gov (United States)

    2016-08-25

    characterization of key metrics , such as effective field enhancement factor and emission area. It is imperative to address issues relating to whether...important are the effects of Coulomb repulsion between adjacent emitting CNTs on the FE characteristics? When do space-charge effects become important and

  18. Characteristics of Transmission-type Microfocus X-ray Tube based-on Carbon Nanotube Field Emitter

    International Nuclear Information System (INIS)

    Heo, Sung Hwan; Ihsan, Aamir; Cho, Sung Oh

    2007-01-01

    A high resolution microfocus x-ray source is widely applied to noninvasive detection for industrial demands, material science and engineering, and to diagnostic study of microbiology and micro-tomography. Carbon nanotube (CNT) is regarded as an excellent electron emitter, which outperforms conventional electron sources in point of brightness. It has been suggested that CNT is used as an electron source of a high resolution x-ray tube according to their low threshold field with atomically sharp geometry, chemically robust structure, and electric conductivity. Several researchers have reported miniaturized x-ray tube based on diode structure and micro x-ray radiography and computed tomography systems using triode types with precise emission control and electrostatic focusing. Especially, a microfocus x-ray source of 30 μm resolution has been demonstrated recently using an elliptical CNT cathode and asymmetrical Eingel lens. However, to increase the spatial resolution of x-ray source, a smaller CNT emitter is desired. Electron focusing optics must be corrected to reduce aberrations. A thin wire tip end can provide a micro-area of CNT substrate, and a magnetic lens and transmission x-ray target are proper to reduce the lens aberration and a focal length. Until now, CNT based microfocus x-ray source with less than 10 um resolution has not been shown. Here we report a microfocus x-ray source with 4.7 μm x-ray focal spot consisted of a conical CNT tip, a single solenoid lens, and a transmission type x-ray target. A magnified x-ray image larger than 230 times was resolved with advantage of microfocused focal spot and transmission x-ray target

  19. Electronic structure and field emission properties of nitrogen doped graphene nano-flakes (GNFs:N) and carbon nanotubes (CNTs:N)

    Energy Technology Data Exchange (ETDEWEB)

    Ray, Sekhar C., E-mail: Raysc@unisa.ac.za [Department of Physics, College of Science, Engineering and Technology, University of South Africa, Private Bag X6, Florida, 1710, Science Campus, Christiaan de Wet and Pioneer Avenue, Florida Park, Johannesburg (South Africa); Pong, W.F. [Department of Physics, Tamkang University, Tamsui 251, New Taipei City, Taiwan (China); Papakonstantinou, P. [Nanotechnology and Integrated Bio-Engineering Centre, University of Ulster, Shore Road, Newtownabbey BT37 0QB (United Kingdom)

    2016-09-01

    Highlights: • Nitrogen doped graphene nano-flakes (GNFs:N) and carbon nano-tubes (CNTs:N) are used to study the electronic/bonding structure along with their defects state. • The I{sub D}/I{sub G} ratio obtained from Raman spectroscopy used for the study of the defects states of CNTs:N than GNFs:N. • The electron field emission result shows that the turn on electric field is lower in case of CNTs:N than GNFs:N. • All results are good agreement with XANES and the results obtained from Raman spectra. - Abstract: Substitution of hetero-atom doping is a promising route to modulate the outstanding material properties of carbon nanotubes and graphene for customized applications. Nitrogen-doping has been introduced to ensure tunable work-function, enhanced n-type carrier concentration, diminished surface energy, and manageable polarization. Along with the promising assessment of N-doping effects, research on the N-doped carbon based composite structures is emerging for the synergistic integration with various functional materials. Nitrogen undoped/doped graphene nano-flakes (GNFs/GNFs:N) and multiwall carbon nano-tubes (MWCNTs/MWCNTs:N) are used for comparative study of their electronic/bonding structure along with their defects state. X-ray absorption near edge structure (XANES) spectroscopy shows that the GNFs:N produce mainly pyridine like structure; whereas MWCNTs:N shows graphitic nitrogen atoms are attached with the carbon lattice. The I{sub D}/I{sub G} ratio obtained from Raman spectroscopy shows that the defects is higher in MWCNTs:N than GNFs:N. The electron field emission result shows that the turn on electric field is lower (higher electron emission current) in case of MWCNTs:N than GNFs:N and are good agreement with XANES and the results obtained from Raman spectra.

  20. Ambipolar Organic Phototransistors with p-Type/n-Type Conjugated Polymer Bulk Heterojunction Light-Sensing Layers

    KAUST Repository

    Nam, Sungho; Han, Hyemi; Seo, Jooyeok; Song, Myeonghun; Kim, Hwajeong; Anthopoulos, Thomas D.; McCulloch, Iain; Bradley, Donal D C; Kim, Youngkyoo

    2016-01-01

    Ambipolar organic phototransistors with sensing channel layers, featuring p-type and n-type conjugated polymer bulk heterojunctions, exhibit outstanding light-sensing characteristics in both p-channel and n-channel sensing operation modes.

  1. Ambipolar Organic Phototransistors with p-Type/n-Type Conjugated Polymer Bulk Heterojunction Light-Sensing Layers

    KAUST Repository

    Nam, Sungho

    2016-11-18

    Ambipolar organic phototransistors with sensing channel layers, featuring p-type and n-type conjugated polymer bulk heterojunctions, exhibit outstanding light-sensing characteristics in both p-channel and n-channel sensing operation modes.

  2. Mechanical properties of carbon nanotubes

    Science.gov (United States)

    Salvetat, J.-P.; Bonard, J.-M.; Thomson, N. H.; Kulik, A. J.; Forró, L.; Benoit, W.; Zuppiroli, L.

    A variety of outstanding experimental results on the elucidation of the elastic properties of carbon nanotubes are fast appearing. These are based mainly on the techniques of high-resolution transmission electron microscopy (HRTEM) and atomic force microscopy (AFM) to determine the Young's moduli of single-wall nanotube bundles and multi-walled nanotubes, prepared by a number of methods. These results are confirming the theoretical predictions that carbon nanotubes have high strength plus extraordinary flexibility and resilience. As well as summarising the most notable achievements of theory and experiment in the last few years, this paper explains the properties of nanotubes in the wider context of materials science and highlights the contribution of our research group in this rapidly expanding field. A deeper understanding of the relationship between the structural order of the nanotubes and their mechanical properties will be necessary for the development of carbon-nanotube-based composites. Our research to date illustrates a qualitative relationship between the Young's modulus of a nanotube and the amount of disorder in the atomic structure of the walls. Other exciting results indicate that composites will benefit from the exceptional mechanical properties of carbon nanotubes, but that the major outstanding problem of load transfer efficiency must be overcome before suitable engineering materials can be produced.

  3. Characterization of a Carbon Nanotube Field Emission Electron Gun for the VAPoR Miniaturized Pyrolysis-Time-of-Flight Mass Spectrometer

    Science.gov (United States)

    Getty, Stephanie; Li, Mary; Costen, Nicholas; Hess, Larry; Feng, Steve; King, Todd; Brinckerhoff, William; Mahaffy, Paul; Glavin, Daniel

    2009-01-01

    We are developing the VAPoR (Volatile Analysis by Pyrolysis of Regolith) instrument towards studying soil composition, volatiles, and trapped noble gases in the polar regions of the Moon. VAPOR will ingest a soil sample and conduct analysis by pyrolysis and time-of-flight mass spectrometry (ToF-MS). Here, we describe miniaturization efforts within this development, including a carbon nanotube (CNT) field emission electron gun that is under consideration for use as the electron impact ionization source for the ToF-MS.

  4. Method for nano-pumping using carbon nanotubes

    Science.gov (United States)

    Insepov, Zeke [Darien, IL; Hassanein, Ahmed [Bolingbrook, IL

    2009-12-15

    The present invention relates generally to the field of nanotechnology, carbon nanotubes and, more specifically, to a method and system for nano-pumping media through carbon nanotubes. One preferred embodiment of the invention generally comprises: method for nano-pumping, comprising the following steps: providing one or more media; providing one or more carbon nanotubes, the one or more nanotubes having a first end and a second end, wherein said first end of one or more nanotubes is in contact with the media; and creating surface waves on the carbon nanotubes, wherein at least a portion of the media is pumped through the nanotube.

  5. Effects of single-walled carbon nanotubes on the bioavailability of PCBs in field-contaminated sediments

    Science.gov (United States)

    Adsorption of hydrophobic organic contaminants (HOCs) to black carbon is a well studied phenomenon. One emerging class of engineered black carbon materials are single-walled carbon nanotubes (SWNT). Little research has investigated the potential of SWNT to adsorb and sequester HO...

  6. Direct Synthesis of Carbon Nanotube Field Emitters on Metal Substrate for Open-Type X-ray Source in Medical Imaging

    Directory of Open Access Journals (Sweden)

    Amar Prasad Gupta

    2017-07-01

    Full Text Available We report the design, fabrication and characterization of a carbon nanotube enabled open-type X-ray system for medical imaging. We directly grew the carbon nanotubes used as electron emitter for electron gun on a non-polished raw metallic rectangular-rounded substrate with an area of 0.1377 cm2 through a plasma enhanced chemical vapor deposition system. The stable field emission properties with triode electrodes after electrical aging treatment showed an anode emission current of 0.63 mA at a gate field of 7.51 V/μm. The 4.5-inch cubic shape open type X-ray system was developed consisting of an X-ray aperture, a vacuum part, an anode high voltage part, and a field emission electron gun including three electrodes with focusing, gate and cathode electrodes. Using this system, we obtained high-resolution X-ray images accelerated at 42–70 kV voltage by digital switching control between emitter and ground electrode.

  7. Direct Synthesis of Carbon Nanotube Field Emitters on Metal Substrate for Open-Type X-ray Source in Medical Imaging.

    Science.gov (United States)

    Gupta, Amar Prasad; Park, Sangjun; Yeo, Seung Jun; Jung, Jaeik; Cho, Chonggil; Paik, Sang Hyun; Park, Hunkuk; Cho, Young Chul; Kim, Seung Hoon; Shin, Ji Hoon; Ahn, Jeung Sun; Ryu, Jehwang

    2017-07-29

    We report the design, fabrication and characterization of a carbon nanotube enabled open-type X-ray system for medical imaging. We directly grew the carbon nanotubes used as electron emitter for electron gun on a non-polished raw metallic rectangular-rounded substrate with an area of 0.1377 cm² through a plasma enhanced chemical vapor deposition system. The stable field emission properties with triode electrodes after electrical aging treatment showed an anode emission current of 0.63 mA at a gate field of 7.51 V/μm. The 4.5-inch cubic shape open type X-ray system was developed consisting of an X-ray aperture, a vacuum part, an anode high voltage part, and a field emission electron gun including three electrodes with focusing, gate and cathode electrodes. Using this system, we obtained high-resolution X-ray images accelerated at 42-70 kV voltage by digital switching control between emitter and ground electrode.

  8. Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.

    Science.gov (United States)

    Li, Dong; Chen, Mingyuan; Zong, Qijun; Zhang, Zengxing

    2017-10-11

    The Schottky junction is an important unit in electronics and optoelectronics. However, its properties greatly degrade with device miniaturization. The fast development of circuits has fueled a rapid growth in the study of two-dimensional (2D) crystals, which may lead to breakthroughs in the semiconductor industry. Here we report a floating-gate manipulated nonvolatile ambipolar Schottky junction memory from stacked all-2D layers of graphene-BP/h-BN/graphene (BP, black phosphorus; h-BN, hexagonal boron nitride) in a designed floating-gate field-effect Schottky barrier transistor configuration. By manipulating the voltage pulse applied to the control gate, the device exhibits ambipolar characteristics and can be tuned to act as graphene-p-BP or graphene-n-BP junctions with reverse rectification behavior. Moreover, the junction exhibits good storability properties of more than 10 years and is also programmable. On the basis of these characteristics, we further demonstrate the application of the device to dual-mode nonvolatile Schottky junction memories, memory inverter circuits, and logic rectifiers.

  9. Effect of Ambipolar Diffusion on Ion Abundances in Contracting Protostellar Cores

    Science.gov (United States)

    Ciolek, Glenn E.; Mouschovias, Telemachos Ch.

    1998-09-01

    Numerical simulations and analytical solutions have established that ambipolar diffusion can reduce the dust-to-gas ratio in magnetically and thermally supercritical cores during the epoch of core formation. We study the effect that this has on the ion chemistry in contracting protostellar cores and present a simplified analytical method that allows one to calculate the ion power-law exponent k (≡d ln ni/d ln nn, where ni and nn are the ion and neutral densities, respectively) as a function of core density. We find that, as in earlier numerical simulations, no single value of k can adequately describe the ion abundance for nn 1/2 during the core formation epoch (densities principle, to determine whether ambipolar diffusion is responsible for core formation in interstellar molecular clouds. For densities >>105 cm-3, k is generally <<1/2.

  10. Ambipolar potential measurement plans and instrumentation. Final report, 1 October 1980-30 September 1982

    International Nuclear Information System (INIS)

    Dahlbacka, G.; Stringfield, R.; Glaros, S.; Buck, V.; Larsen, J.; Burr, L.; Boyle, M.; Lepage, J.; Cirigliano, R.

    1983-03-01

    A Thomson parabola charged particle spectrometer was built with an energy resolution of 80 keV and an active silicon detector array that is read by a computer-compatible CAMAC. The instrument was checked out at the University of Rochester Omega Laser facility. Experiments to measure the ambipolar potential and the dE/dx thermonuclear target to within 50 keV are now possible. The ion temperature of the burn can be determined to within 10%

  11. On the influence of neutral turbulence on ambipolar diffusivities deduced from meteor trail expansion

    Directory of Open Access Journals (Sweden)

    C. M. Hall

    Full Text Available By measuring fading times of radar echoes from underdense meteor trails, it is possible to deduce the ambipolar diffusivities of the ions responsible for these radar echoes. It could be anticipated that these diffusivities increase monotonically with height akin to neutral viscosity. In practice, this is not always the case. Here, we investigate the capability of neutral turbulence to affect the meteor trail diffusion rate.

    Key words. Meteorology and atmospheric dynamics (middle atmosphere dynamics; turbulence

  12. On the influence of neutral turbulence on ambipolar diffusivities deduced from meteor trail expansion

    Directory of Open Access Journals (Sweden)

    C. M. Hall

    2002-11-01

    Full Text Available By measuring fading times of radar echoes from underdense meteor trails, it is possible to deduce the ambipolar diffusivities of the ions responsible for these radar echoes. It could be anticipated that these diffusivities increase monotonically with height akin to neutral viscosity. In practice, this is not always the case. Here, we investigate the capability of neutral turbulence to affect the meteor trail diffusion rate.Key words. Meteorology and atmospheric dynamics (middle atmosphere dynamics; turbulence

  13. Ambipolar SnOx thin-film transistors achieved at high sputtering power

    Science.gov (United States)

    Li, Yunpeng; Yang, Jia; Qu, Yunxiu; Zhang, Jiawei; Zhou, Li; Yang, Zaixing; Lin, Zhaojun; Wang, Qingpu; Song, Aimin; Xin, Qian

    2018-04-01

    SnO is the only oxide semiconductor to date that has exhibited ambipolar behavior in thin-film transistors (TFTs). In this work, ambipolar behavior was observed in SnOx TFTs fabricated at a high sputtering power of 200 W and post-annealed at 150-250 °C in ambient air. X-ray-diffraction patterns showed polycrystallisation of SnO and Sn in the annealed SnOx films. Scanning-electron-microscopy images revealed that microgrooves appeared after the films were annealed. Clusters subsequently segregated along the microgrooves, and our experiments suggest that they were most likely Sn clusters. Atomic force microscopy images indicate an abrupt increase in film roughness due to the cluster segregations. An important implication of this work is that excess Sn in the film, which has generally been thought to be detrimental to the film quality, may promote the ambipolar conduction when it is segregated from the film to enhance the stoichiometric balance.

  14. Solution-processable ambipolar diketopyrrolopyrrole-selenophene polymer with unprecedentedly high hole and electron mobilities.

    Science.gov (United States)

    Lee, Junghoon; Han, A-Reum; Kim, Jonggi; Kim, Yiho; Oh, Joon Hak; Yang, Changduk

    2012-12-26

    There is a fast-growing demand for polymer-based ambipolar thin-film transistors (TFTs), in which both n-type and p-type transistor operations are realized in a single layer, while maintaining simplicity in processing. Research progress toward this end is essentially fueled by molecular engineering of the conjugated backbones of the polymers and the development of process architectures for device fabrication, which has recently led to hole and electron mobilities of more than 1.0 cm(2) V(-1) s(-1). However, ambipolar polymers with even higher performance are still required. By taking into account both the conjugated backbone and side chains of the polymer component, we have developed a dithienyl-diketopyrrolopyrrole (TDPP) and selenophene containing polymer with hybrid siloxane-solubilizing groups (PTDPPSe-Si). A synergistic combination of rational polymer backbone design, side-chain dynamics, and solution processing affords an enormous boost in ambipolar TFT performance, resulting in unprecedentedly high hole and electron mobilities of 3.97 and 2.20 cm(2) V(-1) s(-1), respectively.

  15. Carbon Nanotubes and Modern Nanoagriculture

    KAUST Repository

    Serag, Maged F.

    2015-01-27

    Since their discovery, carbon nanotubes have been prominent members of the nanomaterial family. Owing to their extraordinary physical, chemical, and mechanical properties, carbon nanotubes have been proven to be a useful tool in the field of plant science. They were frequently perceived to bring about valuable biotechnological and agricultural applications that still remain beyond experimental realization. An increasing number of studies have demonstrated the ability of carbon nanotubes to traverse different plant cell barriers. These studies, also, assessed the toxicity and environmental impacts of these nanomaterials. The knowledge provided by these studies is of practical and fundamental importance for diverse applications including intracellular labeling and imaging, genetic transformation, and for enhancing our knowledge of plant cell biology. Although different types of nanoparticles have been found to activate physiological processes in plants, carbon nanotubes received particular interest. Following addition to germination medium, carbon nanotubes enhanced root growth and elongation of some plants such as onion, cucumber and rye-grass. They, also, modulated the expression of some genes that are essential for cell division and plant development. In addition, multi-walled carbon nanotubes were evidenced to penetrate thick seed coats, stimulate germination, and to enhance growth of young tomato seedlings. Multi-walled carbon nanotubes can penetrate deeply into the root system and further distribute into the leaves and the fruits. In recent studies, carbon nanotubes were reported to be chemically entrapped into the structure of plant tracheary elements. This should activate studies in the fields of plant defense and wood engineering. Although, all of these effects on plant physiology and plant developmental biology have not been fully understood, the valuable findings promises more research activity in the near future toward complete scientific understanding of

  16. Carbon nanotubes : their synthesis and integration into nanofabricated structures

    NARCIS (Netherlands)

    Druzhinina, Tamara

    2011-01-01

    The field of nanotechnology has experienced constantly increasing interest over the past decades both from industry and academy. Commonly used nanomaterials include: nanoparticles, nanowires, quantum dots, fullerenes, and carbon nanotubes. Carbon nanotubes, in particular, are promising building

  17. Fundamental and future prospects of printed ambipolar fluorene-type polymer light-emitting transistors for improved external quantum efficiency, mobility, and emission pattern

    Science.gov (United States)

    Kajii, Hirotake

    2018-05-01

    In this review, we focus on the improved external quantum efficiency, field-effect mobility, and emission pattern of top-gate-type polymer light-emitting transistors (PLETs) based on ambipolar fluorene-type polymers. A low-temperature, high-efficiency, printable red phosphorescent PLET based on poly(alkylfluorene) with modified alkyl side chains fabricated by a film transfer process is demonstrated. Device fabrication based on oriented films leads to an improved EL intensity owing to the increase in field-effect mobility. There are three factors that affect the transport of carriers, i.e., the energy level, threshold voltage, and mobility of each layer for heterostructure PLETs, which result in various emission patterns such as the line-shaped, multicolor and in-plane emission pattern in the full-channel area between source and drain electrodes. Fundamentals and future prospects in heterostructure devices are discussed and reviewed.

  18. Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits

    KAUST Repository

    Fahad, Hossain M.

    2011-10-12

    We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.

  19. Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits

    KAUST Repository

    Fahad, Hossain M.; Smith, Casey; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2011-01-01

    We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.

  20. Synthesis and field emission properties of carbon nanotubes grown in ethanol flame based on a photoresist-assisted catalyst annealing process

    International Nuclear Information System (INIS)

    Yang Xiaoxia; Fang Guojia; Liu Nishuang; Wang Chong; Zheng Qiao; Zhou Hai; Zhao Dongshan; Long Hao; Liu Yuping; Zhao Xingzhong

    2009-01-01

    Carbon nanotubes (CNTs) have been grown directly on a Si substrate without a diffusion barrier in ethanol diffusion flame using Ni as the catalyst after a photoresist-assisted catalyst annealing process. The growth mechanism of as-synthesized CNTs is confirmed by scanning electron microscopy, high resolution transmission-electron microscopy and energy-dispersive spectroscopy. The photoresist is the key for the formation of active catalyst particles during annealing process, which then result in the growth of CNTs. The catalyst annealing temperature has been found to affect the morphologies and field electron emission properties of CNTs significantly. The field emission properties of as-grown CNTs are investigated with a diode structure and the obtained CNTs exhibit enhanced characteristics. This technique will be applicable to a low-cost fabrication process of electron-emitter arrays.

  1. Divergent effect of electric fields on the mechanical property of water-filled carbon nanotubes with an application as a nanoscale trigger

    Science.gov (United States)

    Ye, Hongfei; Zheng, Yonggang; Zhou, Lili; Zhao, Junfei; Zhang, Hongwu; Chen, Zhen

    2018-01-01

    Polar water molecules exhibit extraordinary phenomena under nanoscale confinement. Through the application of an electric field, a water-filled carbon nanotube (CNT) that has been successfully fabricated in the laboratory is expected to have distinct responses to the external electricity. Here, we examine the effect of electric field direction on the mechanical property of water-filled CNTs. It is observed that a longitudinal electric field enhances, but the transverse electric field reduces the elastic modulus and critical buckling stress of water-filled CNTs. The divergent effect of the electric field is attributed to the competition between the axial and circumferential pressures induced by polar water molecules. Furthermore, it is notable that the transverse electric field could result in an internal pressure with elliptical distribution, which is an effective and convenient approach to apply nonuniform pressure on nanochannels. Based on pre-strained water-filled CNTs, we designed a nanoscale trigger with an evident and rapid height change initiated by switching the direction of the electric field. The reported finding provides a foundation for an electricity-controlled property of nanochannels filled with polar molecules and provides an insight into the design of nanoscale functional devices.

  2. A contribution from dielectric analysis to the study of the formation of multi-wall carbon nanotubes percolated networks in epoxy resin under an electric field

    International Nuclear Information System (INIS)

    Risi, Celso L.S.; Hattenhauer, Irineu; Ramos, Airton; Coelho, Luiz A.F.; Pezzin, Sérgio H.

    2015-01-01

    The formation of percolation networks in epoxy matrix nanocomposites reinforced with multi-wall carbon nanotubes (MWNT) during the curing process, at different MWNT contents, was studied by using a parallel plate cell subjected to a 300 V/cm AC electric field at 1 kHz. The percolation was verified by the electrical current output measured during and after the resin curing. The behavior of electric dipoles was characterized by impedance spectroscopy and followed the Debye first order dispersion model, by which an average relaxation time of 6.0 × 10 −4 s and a cut-off frequency of 1.7 kHz were experimentally found. By applying the theory of percolation, a critical probability, p c , equal to 0.038 vol% and an exponent of conductivity of 2.0 were found. Both aligned and random samples showed dipole relaxation times typical of interfacial and/or charge-hopping polarization, while the permittivity exhibited an exponential decrease with frequency. This behavior can be related to the increased ability to trap electrical charges due to the formation of the carbon nanotubes network. Optical and electron microscopies confirm the theoretical prediction that the application of an electric field during cure helps the process of MWNT debundling in epoxy resin. - Highlights: • We report the formation of percolating networks of MWNTs under AC electric field. • MWNT/epoxy dielectric properties were measured by impedance spectroscopy. • Lower percolation thresholds were obtained for composites with aligned CNTs. • Application of AC electric field helps the debundling of CNTs. • CNT/Epoxy with percolated networks presents interfacial and hopping polarizations

  3. Non-ambipolar divertor flows in heliotron E

    International Nuclear Information System (INIS)

    Chechkin, V.V.; Voitsenya, V.S.; Smirnova, M.S.; Sorokovoj, E.L.; Mizuuchi, T.; Nagasaki, K.; Okada, H.; Funaba, H.; Hamada, T.; Sano, F.; Zushi, H.; Nakasuga, M.; Kondo, K.; Masuzaki, S.; Motojima, O.

    1999-01-01

    The object of the work is to find out (1) the poloidal distributions of PEC in different poloidal cross-sections of the torus within one field period; (2) the link between PEC in the divertor flows (DF) and the characteristics of the divertor field lines; (3) the effect of different methods and regimes of heating on PEC. The data having been obtained enable us to understand at least partially the nature of PEC in the diverted plasma of H-E

  4. A statistical-based material and process guidelines for design of carbon nanotube field-effect transistors in gigascale integrated circuits.

    Science.gov (United States)

    Ghavami, Behnam; Raji, Mohsen; Pedram, Hossein

    2011-08-26

    Carbon nanotube field-effect transistors (CNFETs) show great promise as building blocks of future integrated circuits. However, synthesizing single-walled carbon nanotubes (CNTs) with accurate chirality and exact positioning control has been widely acknowledged as an exceedingly complex task. Indeed, density and chirality variations in CNT growth can compromise the reliability of CNFET-based circuits. In this paper, we present a novel statistical compact model to estimate the failure probability of CNFETs to provide some material and process guidelines for the design of CNFETs in gigascale integrated circuits. We use measured CNT spacing distributions within the framework of detailed failure analysis to demonstrate that both the CNT density and the ratio of metallic to semiconducting CNTs play dominant roles in defining the failure probability of CNFETs. Besides, it is argued that the large-scale integration of these devices within an integrated circuit will be feasible only if a specific range of CNT density with an acceptable ratio of semiconducting to metallic CNTs can be adjusted in a typical synthesis process.

  5. An Ambipolar BODIPY Derivative for a White Exciplex OLED and Cholesteric Liquid Crystal Laser toward Multifunctional Devices.

    Science.gov (United States)

    Chapran, Marian; Angioni, Enrico; Findlay, Neil J; Breig, Benjamin; Cherpak, Vladyslav; Stakhira, Pavlo; Tuttle, Tell; Volyniuk, Dmytro; Grazulevicius, Juozas V; Nastishin, Yuriy A; Lavrentovich, Oleg D; Skabara, Peter J

    2017-02-08

    A new interface engineering method is demonstrated for the preparation of an efficient white organic light-emitting diode (WOLED) by embedding an ultrathin layer of the novel ambipolar red emissive compound 4,4-difluoro-2,6-di(4-hexylthiopen-2-yl)-1,3,5,7,8-pentamethyl-4-bora-3a,4a-diaza-s-indacene (bThBODIPY) in the exciplex formation region. The compound shows a hole and electron mobility of 3.3 × 10 -4 and 2 × 10 -4 cm 2 V -1 s -1 , respectively, at electric fields higher than 5.3 × 10 5 V cm -1 . The resulting WOLED exhibited a maximum luminance of 6579 cd m -2 with CIE 1931 color coordinates (0.39; 0.35). The bThBODIPY dye is also demonstrated to be an effective laser dye for a cholesteric liquid crystal (ChLC) laser. New construction of the ChLC laser, by which a flat capillary with an optically isotropic dye solution is sandwiched between two dye-free ChLC cells, provides photonic lasing at a wavelength well matched with that of a dye-doped planar ChLC cell.

  6. Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

    Science.gov (United States)

    Tian, Jifa; Chang, Cuizu; Cao, Helin; He, Ke; Ma, Xucun; Xue, Qikun; Chen, Yong P.

    2014-01-01

    Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However, ambiguities exist because these phenomena could also come from bulk states (often carrying significant conduction in many TIs) and are observable even in non-TI materials. Here, we demonstrate back-gated ambipolar TI field-effect transistors in (Bi0.04Sb0.96)2Te3 thin films grown by molecular beam epitaxy on SrTiO3(111), exhibiting a large carrier density tunability (by nearly 2 orders of magnitude) and a metal-insulator transition in the bulk (allowing switching off the bulk conduction). Tuning the Fermi level from bulk band to TSS strongly enhances both the WAL (increasing the number of quantum coherent channels from one to peak around two) and LMR (increasing its slope by up to 10 times). The SS-enhanced LMR is accompanied by a strongly nonlinear Hall effect, suggesting important roles of charge inhomogeneity (and a related classical LMR), although existing models of LMR cannot capture all aspects of our data. Our systematic gate and temperature dependent magnetotransport studies provide deeper insights into the nature of both MR phenomena and reveal differences between bulk and TSS transport in TI related materials. PMID:24810663

  7. Thermal behavior of dynamic magnetizations, hysteresis loop areas and correlations of a cylindrical Ising nanotube in an oscillating magnetic field within the effective-field theory and the Glauber-type stochastic dynamics approach

    International Nuclear Information System (INIS)

    Deviren, Bayram; Keskin, Mustafa

    2012-01-01

    The dynamical aspects of a cylindrical Ising nanotube in the presence of a time-varying magnetic field are investigated within the effective-field theory with correlations and Glauber-type stochastic approach. Temperature dependence of the dynamic magnetizations, dynamic total magnetization, hysteresis loop areas and correlations are investigated in order to characterize the nature of dynamic transitions as well as to obtain the dynamic phase transition temperatures and compensation behaviors. Some characteristic phenomena are found depending on the ratio of the physical parameters in the surface shell and core, i.e., five different types of compensation behaviors in the Néel classification nomenclature exist in the system. -- Highlights: ► Kinetic cylindrical Ising nanotube is investigated using the effective-field theory. ► The dynamic magnetizations, hysteresis loop areas and correlations are calculated. ► The effects of the exchange interactions have been studied in detail. ► Five different types of compensation behaviors have been found. ► Some characteristic phenomena are found depending on ratio of physical parameters.

  8. Thermal behavior of dynamic magnetizations, hysteresis loop areas and correlations of a cylindrical Ising nanotube in an oscillating magnetic field within the effective-field theory and the Glauber-type stochastic dynamics approach

    Energy Technology Data Exchange (ETDEWEB)

    Deviren, Bayram, E-mail: bayram.deviren@nevsehir.edu.tr [Department of Physics, Nevsehir University, 50300 Nevsehir (Turkey); Keskin, Mustafa [Department of Physics, Erciyes University, 38039 Kayseri (Turkey)

    2012-02-20

    The dynamical aspects of a cylindrical Ising nanotube in the presence of a time-varying magnetic field are investigated within the effective-field theory with correlations and Glauber-type stochastic approach. Temperature dependence of the dynamic magnetizations, dynamic total magnetization, hysteresis loop areas and correlations are investigated in order to characterize the nature of dynamic transitions as well as to obtain the dynamic phase transition temperatures and compensation behaviors. Some characteristic phenomena are found depending on the ratio of the physical parameters in the surface shell and core, i.e., five different types of compensation behaviors in the Néel classification nomenclature exist in the system. -- Highlights: ► Kinetic cylindrical Ising nanotube is investigated using the effective-field theory. ► The dynamic magnetizations, hysteresis loop areas and correlations are calculated. ► The effects of the exchange interactions have been studied in detail. ► Five different types of compensation behaviors have been found. ► Some characteristic phenomena are found depending on ratio of physical parameters.

  9. Effect of oxygen plasma on field emission characteristics of single-wall carbon nanotubes grown by plasma enhanced chemical vapour deposition system

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Avshish; Parveen, Shama; Husain, Samina; Ali, Javid; Zulfequar, Mohammad [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Harsh [Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025 (India); Husain, Mushahid, E-mail: mush-reslab@rediffmail.com [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025 (India)

    2014-02-28

    Field emission properties of single wall carbon nanotubes (SWCNTs) grown on iron catalyst film by plasma enhanced chemical vapour deposition system were studied in diode configuration. The results were analysed in the framework of Fowler-Nordheim theory. The grown SWCNTs were found to be excellent field emitters, having emission current density higher than 20 mA/cm{sup 2} at a turn-on field of 1.3 V/μm. The as grown SWCNTs were further treated with Oxygen (O{sub 2}) plasma for 5 min and again field emission characteristics were measured. The O{sub 2} plasma treated SWCNTs have shown dramatic improvement in their field emission properties with emission current density of 111 mA/cm{sup 2} at a much lower turn on field of 0.8 V/μm. The as grown as well as plasma treated SWCNTs were also characterized by various techniques, such as scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy before and after O{sub 2} plasma treatment and the findings are being reported in this paper.

  10. Multiscale Modeling with Carbon Nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Maiti, A

    2006-02-21

    Technologically important nanomaterials come in all shapes and sizes. They can range from small molecules to complex composites and mixtures. Depending upon the spatial dimensions of the system and properties under investigation computer modeling of such materials can range from equilibrium and nonequilibrium Quantum Mechanics, to force-field-based Molecular Mechanics and kinetic Monte Carlo, to Mesoscale simulation of evolving morphology, to Finite-Element computation of physical properties. This brief review illustrates some of the above modeling techniques through a number of recent applications with carbon nanotubes: nano electromechanical sensors (NEMS), chemical sensors, metal-nanotube contacts, and polymer-nanotube composites.

  11. Band-to-band tunneling in a carbon nanotube metal-oxide-semiconductor field-effect transistor is dominated by phonon-assisted tunneling.

    Science.gov (United States)

    Koswatta, Siyuranga O; Lundstrom, Mark S; Nikonov, Dmitri E

    2007-05-01

    Band-to-band tunneling (BTBT) devices have recently gained a lot of interest due to their potential for reducing power dissipation in integrated circuits. We have performed extensive simulations for the BTBT operation of carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) using the nonequilibrium Green's function formalism for both ballistic and dissipative quantum transport. In comparison with recently reported experimental data (J. Am. Chem. Soc. 2006, 128, 3518-3519), we have obtained strong evidence that BTBT in CNT-MOSFETs is dominated by optical phonon assisted inelastic transport, which can have important implications on the transistor characteristics. It is shown that, under large biasing conditions, two-phonon scattering may also become important.

  12. Growth of a single-wall carbon nanotube film and its patterning as an n-type field effect transistor device using an integrated circuit compatible process

    Energy Technology Data Exchange (ETDEWEB)

    Shiau, S H; Gau, C [Institute of Aeronautics and Astronautics, and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan (China); Liu, C W; Dai, B T [National Nano Device Laboratories, No. 27, Nanke 3rd Road, Science-based Industrial Park, Hsin-shi, Tainan, Taiwan (China)], E-mail: gauc@mail.ncku.edu.tw

    2008-03-12

    This study presents the synthesis of a dense single-wall carbon nanotube (SWNT) network on a silicon substrate using alcohol as the source gas. The nanosize catalysts required are made by the reduction of metal compounds in ethanol. The key point in spreading the nanoparticles on the substrate, so that the SWNT network can be grown over the entire wafer, is making the substrate surface hydrophilic. This SWNT network is so dense that it can be treated like a thin film. Methods of patterning this SWNT film with integrated circuit compatible processes are presented and discussed for the first time in the literature. Finally, fabrication and characteristic measurements of a field effect transistor (FET) using this SWNT film are also demonstrated. This FET is shown to have better electronic properties than any other kind of thin film transistor. This thin film with good electronic properties can be readily applied in the processing of many other SWNT electronic devices.

  13. The influence of ambipolarity on plasma confinement and on the performance of electron cyclotron resonance ion sources.

    Science.gov (United States)

    Schachter, L; Dobrescu, S; Stiebing, K E; Thuillier, T; Lamy, T

    2008-02-01

    Charge diffusion in an electron cyclotron resonance ion source (ECRIS) discharge is usually characterized by nonambipolar behavior. While the ions are transported to the radial walls, electrons are lost axially from the magnetic trap. Global neutrality is maintained via compensating currents in the conducting walls of the vacuum chamber. It is assumed that this behavior reduces the ion breeding times compared to a truly ambipolar plasma. We have carried out a series of dedicated experiments in which the ambipolarity of the ECRIS plasma was influenced by inserting special metal-dielectric structures (MD layers) into the plasma chamber of the Frankfurt 14 GHz ECRIS. The measurements demonstrate the positive influence on the source performance when the ECR plasma is changed toward more ambipolar behavior.

  14. A Selenophene-Based Low-Bandgap Donor-Acceptor Polymer Leading to Fast Ambipolar Logic

    KAUST Repository

    Kronemeijer, Auke J.

    2012-02-20

    Fast ambipolar CMOS-like logic is demonstrated using a new selenophene-based donor-acceptor polymer semiconductor. The polymer exhibits saturation hole and electron mobilities of 0.46 cm 2/Vs and 0.84 cm 2/Vs. Inverters are fabricated with high gains while three-stage ring oscillators show stable oscillation with an unprecedented maximum frequency of 182 kHz at a relatively low supply voltage of 50 V. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Solution-grown organic single-crystalline p-n junctions with ambipolar charge transport.

    Science.gov (United States)

    Fan, Congcheng; Zoombelt, Arjan P; Jiang, Hao; Fu, Weifei; Wu, Jiake; Yuan, Wentao; Wang, Yong; Li, Hanying; Chen, Hongzheng; Bao, Zhenan

    2013-10-25

    Organic single-crystalline p-n junctions are grown from mixed solutions. First, C60 crystals (n-type) form and, subsequently, C8-BTBT crystals (p-type) nucleate heterogeneously on the C60 crystals. Both crystals continue to grow simultaneously into single-crystalline p-n junctions that exhibit ambipolar charge transport characteristics. This work provides a platform to study organic single-crystalline p-n junctions. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. A Selenophene-Based Low-Bandgap Donor-Acceptor Polymer Leading to Fast Ambipolar Logic

    KAUST Repository

    Kronemeijer, Auke J.; Gili, Enrico; Shahid, Munazza; Rivnay, Jonathan; Salleo, Alberto; Heeney, Martin; Sirringhaus, Henning

    2012-01-01

    Fast ambipolar CMOS-like logic is demonstrated using a new selenophene-based donor-acceptor polymer semiconductor. The polymer exhibits saturation hole and electron mobilities of 0.46 cm 2/Vs and 0.84 cm 2/Vs. Inverters are fabricated with high gains while three-stage ring oscillators show stable oscillation with an unprecedented maximum frequency of 182 kHz at a relatively low supply voltage of 50 V. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Toward printed integrated circuits based on unipolar or ambipolar polymer semiconductors.

    Science.gov (United States)

    Baeg, Kang-Jun; Caironi, Mario; Noh, Yong-Young

    2013-08-21

    transport properties. Among this class of materials, various polymers can show well balanced electrons and holes mobility, therefore being indicated as ambipolar semiconductors, good environmental stability, and a small band-gap, which simplifies the tuning of charge injection. This opened up the possibility of taking advantage of the superior performances offered by complementary "CMOS-like" logic for the design of digital ICs, easing the scaling down of critical geometrical features, and achieving higher complexity from robust single gates (e.g., inverters) and test circuits (e.g., ring oscillators) to more complete circuits. Here, we review the recent progress in the development of printed ICs based on polymeric semiconductors suitable for large-volume micro- and nano-electronics applications. Particular attention is paid to the strategies proposed in the literature to design and synthesize high mobility polymers and to develop suitable printing tools and techniques to allow for improved patterning capability required for the down-scaling of devices in order to achieve the operation frequencies needed for applications, such as flexible radio-frequency identification (RFID) tags, near-field communication (NFC) devices, ambient electronics, and portable flexible displays. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Study of Thermal-Field Emission Properties and Investigation of Temperature dependent Noise in the Emission Current form vertical Carbon nanotube emitters

    KAUST Repository

    Kolekar, Sadhu

    2017-05-05

    We have investigated temperature dependent field electron emission characteristics of vertical carbon nanotubes (CNTs). The generalized expression for electron emission from well defined cathode surface is given by Millikan and Lauritsen [1] for the combination of temperature and electric field effect. The same expression has been used to explain the electron emission characteristics from vertical CNT emitters. Furthermore, this has been applied to explain the electron emission for different temperatures ranging from room temperature to 1500 K. The real-time field electron emission images at room temperature and 1500 K are recorded by using Charge Coupled Device (CCD), in order to understand the effect of temperature on electron emission spots in image morphology (as indicated by ring like structures) and electron emission spot intensity of the emitters. Moreover, the field electron emission images can be used to calculate the total number of emitters per cm2 for electron emission. The calculated number of emitters per cm2 is 4.5x107 and, the actual number emitters per cm2 present for electron emission calculated from Atomic Force Microscopy (AFM) data is 1.2x1012. The measured Current-Voltage (I-V) characteristics obey the Folwer-Nordheim (F-N) type behavior. The fluctuations in the emission current are recorded at different temperatures and, temperature dependence of power spectral density obeys power law relation s(f)=I2/f2 with that of emission current and frequency.

  19. Designing an optimum pulsed magnetic field by a resistance/self-inductance/capacitance discharge system and alignment of carbon nanotubes embedded in polypyrrole matrix

    Science.gov (United States)

    Kazemikia, Kaveh; Bonabi, Fahimeh; Asadpoorchallo, Ali; Shokrzadeh, Majid

    2015-02-01

    In this work, an optimized pulsed magnetic field production apparatus is designed based on a RLC (Resistance/Self-inductance/Capacitance) discharge circuit. An algorithm for designing an optimum magnetic coil is presented. The coil is designed to work at room temperature. With a minor physical reinforcement, the magnetic flux density can be set up to 12 Tesla with 2 ms duration time. In our design process, the magnitude and the length of the magnetic pulse are the desired parameters. The magnetic field magnitude in the RLC circuit is maximized on the basis of the optimal design of the coil. The variables which are used in the optimization process are wire diameter and the number of coil layers. The coil design ensures the critically damped response of the RLC circuit. The electrical, mechanical, and thermal constraints are applied to the design process. A locus of probable magnetic flux density values versus wire diameter and coil layer is provided to locate the optimum coil parameters. Another locus of magnetic flux density values versus capacitance and initial voltage of the RLC circuit is extracted to locate the optimum circuit parameters. Finally, the application of high magnetic fields on carbon nanotube-PolyPyrrole (CNT-PPy) nano-composite is presented. Scanning probe microscopy technique is used to observe the orientation of CNTs after exposure to a magnetic field. The result shows alignment of CNTs in a 10.3 Tesla, 1.5 ms magnetic pulse.

  20. Strain relaxation and ambipolar electrical transport in GaAs/InSb core-shell nanowires.

    Science.gov (United States)

    Rieger, Torsten; Zellekens, Patrick; Demarina, Natalia; Hassan, Ali Al; Hackemüller, Franz Josef; Lüth, Hans; Pietsch, Ullrich; Schäpers, Thomas; Grützmacher, Detlev; Lepsa, Mihail Ion

    2017-11-30

    The growth, crystal structure, strain relaxation and room temperature transport characteristics of GaAs/InSb core-shell nanowires grown using molecular beam epitaxy are investigated. Due to the large lattice mismatch between GaAs and InSb of 14%, a transition from island-based to layer-like growth occurs during the formation of the shell. High resolution transmission electron microscopy in combination with geometric phase analyses as well as X-ray diffraction with synchrotron radiation are used to investigate the strain relaxation and prove the existence of different dislocations relaxing the strain on zinc blende and wurtzite core-shell nanowire segments. While on the wurtzite phase only Frank partial dislocations are found, the strain on the zinc blende phase is relaxed by dislocations with perfect, Shockley partial and Frank partial dislocations. Even for ultrathin shells of about 2 nm thickness, the strain caused by the high lattice mismatch between GaAs and InSb is relaxed almost completely. Transfer characteristics of the core-shell nanowires show an ambipolar conductance behavior whose strength strongly depends on the dimensions of the nanowires. The interpretation is given based on an electronic band profile which is calculated for completely relaxed core/shell structures. The peculiarities of the band alignment in this situation implies simultaneously occupied electron and hole channels in the InSb shell. The ambipolar behavior is then explained by the change of carrier concentration in both channels by the gate voltage.

  1. Application of Laplace transform for the exact effect of a magnetic field on heat transfer of carbon nanotubes-suspended nanofluids

    Energy Technology Data Exchange (ETDEWEB)

    Ebaid, Abdelhalim; Al Sharif, Mohammed A. [Tabuk Univ. (Saudi Arabia). Faculty of Science

    2015-10-01

    Since the discovery of the carbon nanotubes (CNTs), there is an increasing interest in their applications in industry and medical fields. Attempts of using such CNTs as drug carriers and in cancer therapy in the presence of a magnetic field are now undertaken because of their direct impacts on increasing the thermal conductivity of base fluids. Two types of CNTs are well known for the researchers, the single-walled CNT (SWCNTs) and the multi-walled CNTs (MWCNTs); however, the subject of which one is more effective in treatment of cancer deserves more investigations. The present article discusses the effect of such types of CNTs on the flow and heat transfer of nanofluids in the presence of a magnetic field. Exact analytical solution for the heat equation has been obtained by using the Laplace transform, where the solution is expressed in terms of a new special function, the generalised incomplete gamma function. The effects of various parameters on the fluid velocity, temperature distribution, and heat transfer rates have been introduced. Details of possible applications of the current results in the treatment of cancer have been also discussed.

  2. Application of Laplace transform for the exact effect of a magnetic field on heat transfer of carbon nanotubes-suspended nanofluids

    International Nuclear Information System (INIS)

    Ebaid, Abdelhalim; Al Sharif, Mohammed A.

    2015-01-01

    Since the discovery of the carbon nanotubes (CNTs), there is an increasing interest in their applications in industry and medical fields. Attempts of using such CNTs as drug carriers and in cancer therapy in the presence of a magnetic field are now undertaken because of their direct impacts on increasing the thermal conductivity of base fluids. Two types of CNTs are well known for the researchers, the single-walled CNT (SWCNTs) and the multi-walled CNTs (MWCNTs); however, the subject of which one is more effective in treatment of cancer deserves more investigations. The present article discusses the effect of such types of CNTs on the flow and heat transfer of nanofluids in the presence of a magnetic field. Exact analytical solution for the heat equation has been obtained by using the Laplace transform, where the solution is expressed in terms of a new special function, the generalised incomplete gamma function. The effects of various parameters on the fluid velocity, temperature distribution, and heat transfer rates have been introduced. Details of possible applications of the current results in the treatment of cancer have been also discussed.

  3. A comparative study of nitrogen plasma effect on field emission characteristics of single wall carbon nanotubes synthesized by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Avshish; Parveen, Shama; Husain, Samina; Ali, Javid [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Zulfequar, Mohammad [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Harsh [Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Husain, Mushahid, E-mail: mush_reslab@rediffmail.com [Department of Physics, Jamia Millia Islamia (A Central University), New Delhi 110025 (India); Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (A Central University), New Delhi 110025 (India)

    2014-12-15

    Highlights: • Vertically aligned single wall carbon nanotubes (SWCNTs) have been successfully grown on nickel (Ni) deposited silicon substrate. • The diameter distribution of the grown (SWCNTs) is in the range 1–2 nm. • A current density of 25.0 mA/cm{sup 2} at 1.9 V/μm of the grown SWCNTs is observed with a high turn-on field (E{sub to}) of 1.3 V/μm. • After N{sub 2} nitrogen plasma treatment, huge current density of 81.5 mA/cm{sup 2} at 2.0 V/μm was recorded with low E{sub to} of 1.2 V/μm. • The comparison of these two typical results indicates a drastic enhancement in the field emission properties after plasma treatments. - Abstract: Vertically aligned single wall carbon nanotubes (SWCNTs) with large scale control of diameter, length and alignment have successfully been grown by plasma enhanced chemical vapor deposition (PECVD) system. The nickel (Ni) as catalyst deposited on silicon (Si) substrate was used to grow the SWCNTs. Field emission (FE) characteristics of the as grown SWCNTs were measured using indigenously designed setup in which a diode is configured in such a way that by applying negative voltage on the copper plate (cathode) with respect to stainless steel anode plate, current density can be recorded. To measure the FE characteristics, SWCNTs film pasted on the copper plate with silver epoxy was used as electron emitter source. The effective area of anode was ∼78.5 mm{sup 2} for field emission measurements. The emission measurements were carried out under high vacuum pressure of the order of 10{sup −6} Torr to minimize the electron scattering and degradation of the emitters. The distance between anode and cathode was kept 500 μm (constant) during entire field emission studies. The grown SWCNTs are excellent field emitters, having emission current density higher than 25 mA/cm{sup 2} at turn-on field 1.3 V/μm. In order to enhance the field emission characteristics, the as grown SWCNTs have been treated under nitrogen (N{sub 2

  4. Neoclassical transport and radial electric fields in TJ-K

    International Nuclear Information System (INIS)

    Rahbarnia, K.; Greiner, F.; Ramisch, M.; Stroth, U.; Greiner, F.

    2003-01-01

    The neoclassical transport is investigated in the torsatron TJ-K, which is operated with a low-temperature plasma. In the low-collisionality regime neoclassical losses are not intrinsically ambipolar, leading to the formation of a radial electric field which acts on both neoclassical and turbulent transport. This electric field is measured with a combination of Langmuir and emissive probes. The data are compared with the ambipolar electric field calculated with an analytic model. The experimental fields are positive and larger than the calculated ones. Direct losses of the fast electrons might explain this discrepancy. (orig.)

  5. Single walled carbon nanotubes functionally adsorbed to biopolymers for use as chemical sensors

    Science.gov (United States)

    Johnson, Jr., Alan T.; Gelperin, Alan [Princeton, NJ; Staii, Cristian [Madison, WI

    2011-07-12

    Chemical field effect sensors comprising nanotube field effect devices having biopolymers such as single stranded DNA functionally adsorbed to the nanotubes are provided. Also included are arrays comprising the sensors and methods of using the devices to detect volatile compounds.

  6. High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis

    International Nuclear Information System (INIS)

    Joung, Daeha; Chunder, A; Zhai, Lei; Khondaker, Saiful I

    2010-01-01

    We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets. The RGO sheets suspended in water were assembled between prefabricated gold source and drain electrodes using ac dielectrophoresis. With the application of a backgate voltage, 60% of the devices showed p-type FET behavior, while the remaining 40% showed ambipolar behavior. After mild thermal annealing at 200 deg. C, all ambipolar RGO FET remained ambipolar with increased hole and electron mobility, while 60% of the p-type RGO devices were transformed to ambipolar. The maximum hole and electron mobilities of the devices were 4.0 and 1.5 cm 2 V -1 s -1 respectively. High yield assembly of chemically derived RGO FET will have significant impact in scaled up fabrication of graphene based nanoelectronic devices.

  7. 3D NANOTUBE FIELD EFFECT TRANSISTORS FOR HYBRID HIGH-PERFORMANCE AND LOW-POWER OPERATION WITH HIGH CHIP-AREA EFFICIENCY

    KAUST Repository

    Fahad, Hossain M.

    2014-03-01

    scaling on silicon, the amount of current generated per device has to be increased while keeping short channel effects and off-state leakage at bay. The objective of this doctoral thesis is the investigation of an innovative vertical silicon based architecture called the silicon nanotube field effect transistor (Si NTFET). This topology incorporates a dual inner/outer core/shell gate stack strategy to control the volume inversion properties in a hollow silicon 1D quasi-nanotube under a tight electrostatic configuration. Together with vertically aligned source and drain, the Si NTFET is capable of very high on-state performance (drive current) in an area-efficient configuration as opposed to arrays of gate-all-around nanowires, while maintaining leakage characteristics similar to a single nanowire. Such a device architecture offsets the need of device arraying that is needed with fin and nanowire architectures. Extensive simulations are used to validate the potential benefits of Si NTFETs over GAA NWFETs on a variety of platforms such as conventional MOSFETs, tunnel FETs, junction-less FETs. This thesis demonstrates a novel CMOS compatible process flow to fabricate vertical nanotube transistors that offer a variety of advantages such as lithography-independent gate length definition, integration of epitaxially grown silicon nanotubes with spacer based gate dielectrics and abrupt in-situ doped source/drain junctions. Experimental measurement data will showcase the various materials and processing challenges in fabricating these devices. Finally, an extension of this work to topologically transformed wavy channel FinFETs is also demonstrated keeping in line with the theme of area efficient high-performance electronics.

  8. Electrochemical biosensing based on polypyrrole/titania nanotube hybrid

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Yibing, E-mail: ybxie@seu.edu.cn; Zhao, Ye

    2013-12-01

    The glucose oxidase (GOD) modified polypyrrole/titania nanotube enzyme electrode is fabricated for electrochemical biosensing application. The titania nanotube array is grown directly on a titanium substrate through an anodic oxidation process. A thin film of polypyrrole is coated onto titania nanotube array to form polypyrrole/titania nanotube hybrid through a normal pulse voltammetry process. GOD-polypyrrole/titania nanotube enzyme electrode is prepared by the covalent immobilization of GOD onto polypyrrole/titania nanotube hybrid via the cross-linker of glutaraldehyde. The morphology and microstructure of nanotube electrodes are characterized by field emission scanning electron microscopy and Fourier transform infrared analysis. The biosensing properties of this nanotube enzyme electrode have been investigated by means of cyclic voltammetry and chronoamperometry. The hydrophilic polypyrrole/titania nanotube hybrid provides highly accessible nanochannels for GOD encapsulation, presenting good enzymatic affinity. As-formed GOD-polypyrrole/titania nanotube enzyme electrode well conducts bioelectrocatalytic oxidation of glucose, exhibiting a good biosensing performance with a high sensitivity, low detection limit and wide linear detection range. - Graphical abstract: The schematic diagram presents the fabrication of glucose oxidase modified polypyrrole/titania (GOD-PPy/TiO{sub 2}) nanotube enzyme electrode for biosensing application. - Highlights: • Hydrophilic polypyrrole/titania nanotube hybrid is well used as biosensing substrate. • Polypyrrole promotes GOD immobilization on titania nanotubes via glutaraldehyde. • GOD-polypyrrole/titania enzyme electrode shows good bioelectrocatalytic reactivity.

  9. Electrochemical biosensing based on polypyrrole/titania nanotube hybrid

    International Nuclear Information System (INIS)

    Xie, Yibing; Zhao, Ye

    2013-01-01

    The glucose oxidase (GOD) modified polypyrrole/titania nanotube enzyme electrode is fabricated for electrochemical biosensing application. The titania nanotube array is grown directly on a titanium substrate through an anodic oxidation process. A thin film of polypyrrole is coated onto titania nanotube array to form polypyrrole/titania nanotube hybrid through a normal pulse voltammetry process. GOD-polypyrrole/titania nanotube enzyme electrode is prepared by the covalent immobilization of GOD onto polypyrrole/titania nanotube hybrid via the cross-linker of glutaraldehyde. The morphology and microstructure of nanotube electrodes are characterized by field emission scanning electron microscopy and Fourier transform infrared analysis. The biosensing properties of this nanotube enzyme electrode have been investigated by means of cyclic voltammetry and chronoamperometry. The hydrophilic polypyrrole/titania nanotube hybrid provides highly accessible nanochannels for GOD encapsulation, presenting good enzymatic affinity. As-formed GOD-polypyrrole/titania nanotube enzyme electrode well conducts bioelectrocatalytic oxidation of glucose, exhibiting a good biosensing performance with a high sensitivity, low detection limit and wide linear detection range. - Graphical abstract: The schematic diagram presents the fabrication of glucose oxidase modified polypyrrole/titania (GOD-PPy/TiO 2 ) nanotube enzyme electrode for biosensing application. - Highlights: • Hydrophilic polypyrrole/titania nanotube hybrid is well used as biosensing substrate. • Polypyrrole promotes GOD immobilization on titania nanotubes via glutaraldehyde. • GOD-polypyrrole/titania enzyme electrode shows good bioelectrocatalytic reactivity

  10. Electropolymerization of polyaniline on titanium oxide nanotubes for supercapacitor application

    International Nuclear Information System (INIS)

    Mujawar, Sarfraj H.; Ambade, Swapnil B.; Battumur, T.; Ambade, Rohan B.; Lee, Soo-Hyoung

    2011-01-01

    Highlights: → Polyaniline (PANI)-Titanium nanotube template (TNT) composite for supercapacitors. → The mechanism of the controlled growth of hollow open ended PANI nanotubes using a TNT template is studied. → A rare effort to electropolymerise PANI on TNTs resulting into an appreciable capacitance of 740 F g -1 . - Abstract: Vertically aligned polyaniline (PANI) nanotubes have great potential application in supercapacitor electrode material. In this paper we have investigated facile growth of PANI nanotubes on a titanium nanotube template (TNT) using electrochemical polymerization. The morphology of PANI nanostructures grown over TNT is strongly influenced by the scan rate in the electrochemical polymerization. The growth morphology of PANI nanotubes has been carefully analyzed by field emission scanning electron microscopy. The detailed growth mechanism of PANI nanotubes has been put forward. Specific capacitance value of 740 F g -1 was obtained for PANI nanotube structures (measured at charge-discharge rate of 3 A g -1 ).

  11. Insight into the Broad Field of Polymer Nanocomposites: From Carbon Nanotubes to Clay Nanoplatelets, via Metal Nanoparticles

    Directory of Open Access Journals (Sweden)

    Cristina Stefanescu

    2009-11-01

    Full Text Available Highly ordered polymer nanocomposites are complex materials that display a rich morphological behavior owing to variations in composition, structure, and properties on a nanometer length scale. Metal-polymer nanocomposite materials are becoming more popular for applications requiring low cost, high metal surface areas. Catalytic systems seem to be the most prevalent application for a wide range of metals used in polymer nanocomposites, particularly for metals like Pt, Ni, Co, and Au, with known catalytic activities. On the other hand, among the most frequently utilized techniques to prepare polymer/CNT and/or polymer/clay nanocomposites are approaches like melt mixing, solution casting, electrospinning and solid-state shear pulverization. Additionally, some of the current and potential applications of polymer/CNT and/or polymer/clay nanocomposites include photovoltaic devices, optical switches, electromagnetic interference (EMI shielding, aerospace and automotive materials, packaging, adhesives and coatings. This extensive review covers a broad range of articles, typically from high impact-factor journals, on most of the polymer-nanocomposites known to date: polymer/carbon nanotubes, polymer/metal nanospheres, and polymer/clay nanoplatelets composites. The various types of nanocomposites are described form the preparation stages to performance and applications. Comparisons of the various types of nanocomposites are conducted and conclusions are formulated.

  12. Reinforced carbon fiber laminates with oriented carbon nanotube epoxy nanocomposites: Magnetic field assisted alignment and cryogenic temperature mechanical properties.

    Science.gov (United States)

    He, Yuxin; Yang, Song; Liu, Hu; Shao, Qian; Chen, Qiuyu; Lu, Chang; Jiang, Yuanli; Liu, Chuntai; Guo, Zhanhu

    2018-05-01

    The epoxy nanocomposites with ordered multi-walled carbon nanotubes (MWCNTs) were used to influence the micro-cracks resistance of carbon fiber reinforced epoxy (CF/EP) laminate at 77 K, Oxidized MWCNTs functionalized with Fe 3 O 4 (Fe 3 O 4 /O-MWCNTs) with good magnetic properties were prepared by co-precipitation method and used to modify epoxy (EP) for cryogenic applications. Fe 3 O 4 /O-MWCNTs reinforced carbon fiber epoxy composites were also prepared through vacuum-assisted resin transfer molding (VARTM). The ordered Fe 3 O 4 /O-MWCNTs were observed to have effectively improved the mechanical properties of epoxy (EP) matrix at 77 K and reduce the coefficient of thermal expansion (CTE) of EP matrix. The ordered Fe 3 O 4 /O-MWCNTs also obviously improved the micro-cracks resistance of CF/EP composites at 77 K. Compared to neat EP, the CTE of ordered Fe 3 O 4 /O-MWCNTs modified CF/EP composites was decreased 37.6%. Compared to CF/EP composites, the micro-cracks density of ordered Fe 3 O 4 /O-MWCNTs modified CF/EP composites at 77 K was decreased 37.2%. Copyright © 2018 Elsevier Inc. All rights reserved.

  13. Nanotube phonon waveguide

    Science.gov (United States)

    Chang, Chih-Wei; Zettl, Alexander K.

    2013-10-29

    Disclosed are methods and devices in which certain types of nanotubes (e.g., carbon nanotubes and boron nitride nanotubes conduct heat with high efficiency and are therefore useful in electronic-type devices.

  14. Near-infrared magneto-optical study of excitonic states in single-walled carbon nanotubes under ultra-high magnetic fields

    International Nuclear Information System (INIS)

    Yokoi, H; Effendi, Mukhtar; Minami, N; Takeyama, S

    2011-01-01

    Singlet excitonic states at the first subband-edge in single-walled carbon nanotubes (SWCNTs) have been studied through near-infrared magneto-absorption spectroscopy under magnetic fields to 105.9 T. Well-resolved absorption spectra of stretch-aligned SWCNT(CoMoCAT)-gelatin films were obtained above 100 T. By the application of magnetic fields in parallel to the alignment of SWCNTs, peak shift toward the lower energy was observed for (8, 4) and (7, 6) tubes and the opposite behavior was observed for (7, 5) and (6, 5) tubes. Above 28.8 T, new peaks emerged at the higher energy side of the peak for the (8, 4) and (7, 6) tubes, and at the lower energy side of the peaks for the (7, 5) and (6, 5) tubes. The magnetic splitting between the existing peak and the new peak was symmetric for every tube, which is in line with the energy splitting due to the Aharonov-Bohm effect. Judging from the energetic positions where the new peaks emerged, the singlet dark excitonic state locates at the lower energy than the singlet bright one in the (7, 5) and (6, 5) tubes while it is suggested strongly that the bright one locates at the lower energy in the (8, 4) and (7, 6) tubes.

  15. Proof of Concept Coded Aperture Miniature Mass Spectrometer Using a Cycloidal Sector Mass Analyzer, a Carbon Nanotube (CNT) Field Emission Electron Ionization Source, and an Array Detector

    Science.gov (United States)

    Amsden, Jason J.; Herr, Philip J.; Landry, David M. W.; Kim, William; Vyas, Raul; Parker, Charles B.; Kirley, Matthew P.; Keil, Adam D.; Gilchrist, Kristin H.; Radauscher, Erich J.; Hall, Stephen D.; Carlson, James B.; Baldasaro, Nicholas; Stokes, David; Di Dona, Shane T.; Russell, Zachary E.; Grego, Sonia; Edwards, Steven J.; Sperline, Roger P.; Denton, M. Bonner; Stoner, Brian R.; Gehm, Michael E.; Glass, Jeffrey T.

    2018-02-01

    Despite many potential applications, miniature mass spectrometers have had limited adoption in the field due to the tradeoff between throughput and resolution that limits their performance relative to laboratory instruments. Recently, a solution to this tradeoff has been demonstrated by using spatially coded apertures in magnetic sector mass spectrometers, enabling throughput and signal-to-background improvements of greater than an order of magnitude with no loss of resolution. This paper describes a proof of concept demonstration of a cycloidal coded aperture miniature mass spectrometer (C-CAMMS) demonstrating use of spatially coded apertures in a cycloidal sector mass analyzer for the first time. C-CAMMS also incorporates a miniature carbon nanotube (CNT) field emission electron ionization source and a capacitive transimpedance amplifier (CTIA) ion array detector. Results confirm the cycloidal mass analyzer's compatibility with aperture coding. A >10× increase in throughput was achieved without loss of resolution compared with a single slit instrument. Several areas where additional improvement can be realized are identified.

  16. Wave propagation in fluid-conveying viscoelastic carbon nanotubes under longitudinal magnetic field with thermal and surface effect via nonlocal strain gradient theory

    Science.gov (United States)

    Zhen, Yaxin; Zhou, Lin

    2017-03-01

    Based on nonlocal strain gradient theory, wave propagation in fluid-conveying viscoelastic single-walled carbon nanotubes (SWCNTs) is studied in this paper. With consideration of thermal effect and surface effect, wave equation is derived for fluid-conveying viscoelastic SWCNTs under longitudinal magnetic field utilizing Euler-Bernoulli beam theory. The closed-form expressions are derived for the frequency and phase velocity of the wave motion. The influences of fluid flow velocity, structural damping coefficient, temperature change, magnetic flux and surface effect are discussed in detail. SWCNTs’ viscoelasticity reduces the wave frequency of the system and the influence gets remarkable with the increase of wave number. The fluid in SWCNTs decreases the frequency of wave propagation to a certain extent. The frequency (phase velocity) gets larger due to the existence of surface effect, especially when the diameters of SWCNTs and the wave number decrease. The wave frequency increases with the increase of the longitudinal magnetic field, while decreases with the increase of the temperature change. The results may be helpful for better understanding the potential applications of SWCNTs in nanotechnology.

  17. Carbon nanotubes for biological and biomedical applications

    International Nuclear Information System (INIS)

    Yang Wenrong; Thordarson, Pall; Gooding, J Justin; Ringer, Simon P; Braet, Filip

    2007-01-01

    Ever since the discovery of carbon nanotubes, researchers have been exploring their potential in biological and biomedical applications. The recent expansion and availability of chemical modification and bio-functionalization methods have made it possible to generate a new class of bioactive carbon nanotubes which are conjugated with proteins, carbohydrates, or nucleic acids. The modification of a carbon nanotube on a molecular level using biological molecules is essentially an example of the 'bottom-up' fabrication principle of bionanotechnology. The availability of these biomodified carbon nanotube constructs opens up an entire new and exciting research direction in the field of chemical biology, finally aiming to target and to alter the cell's behaviour at the subcellular or molecular level. This review covers the latest advances of bio-functionalized carbon nanotubes with an emphasis on the development of functional biological nano-interfaces. Topics that are discussed herewith include methods for biomodification of carbon nanotubes, the development of hybrid systems of carbon nanotubes and biomolecules for bioelectronics, and carbon nanotubes as transporters for a specific delivery of peptides and/or genetic material to cells. All of these current research topics aim at translating these biotechnology modified nanotubes into potential novel therapeutic approaches. (topical review)

  18. Magnetization measurement of single La{sub 0.67}Ca{sub 0.33}MnO{sub 3} nanotubes in perpendicular magnetic fields using a micromechanical torsional oscillator

    Energy Technology Data Exchange (ETDEWEB)

    Antonio, D., E-mail: dario.antonio@cab.cnea.gov.a [Comision Nacional de Energia Atomica, Centro Atomico Bariloche, (8400) S. C. de Bariloche (Argentina); Dolz, M.I.; Pastoriza, H. [Comision Nacional de Energia Atomica, Centro Atomico Bariloche, (8400) S. C. de Bariloche (Argentina)

    2010-03-15

    Using a silicon micromechanical resonator as a sensitive magnetometer, the authors have studied both experimentally and theoretically the magnetic behavior of two isolated ferromagnetic nanotubes of perovskite La{sub 0.67}Ca{sub 0.33}MnO{sub 3}. The article investigates the specific configuration where a magnetic field H is applied perpendicular to the magnetic easy axis of an isolated nanotube characterized by an uniaxial anisotropy constant K. In this situation, the magnetization M reduces the effective elastic constant k{sub M} of the resonator. This softening of the mechanical system is opposed to the hardening effect of M observed in a previous work, where H was applied parallel to the easy axis. Moreover, in this magnetic field configuration two distinct magnetization regimes are manifested, depending on the magnitude of H. For H>>2K/M the magnetization is almost parallel to the applied magnetic field and for H<<2K/M it is almost parallel to the easy axis of the nanotube. At a certain value of H there is a sharp transition from one regime to the other, accompanied by a peak in the energy dissipation.

  19. Transparent ambipolar organic thin film transistors based on multilayer transparent source-drain electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Nan; Hu, Yongsheng, E-mail: huyongsheng@ciomp.ac.cn, E-mail: liuxy@ciomp.ac.cn; Lin, Jie; Li, Yantao; Liu, Xingyuan, E-mail: huyongsheng@ciomp.ac.cn, E-mail: liuxy@ciomp.ac.cn [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

    2016-08-08

    A fabrication method for transparent ambipolar organic thin film transistors with transparent Sb{sub 2}O{sub 3}/Ag/Sb{sub 2}O{sub 3} (SAS) source and drain electrodes has been developed. A pentacene/N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic di-imide (PTCDI-C13) bilayer heterojunction is used as the active semiconductor. The electrodes are deposited by room temperature electron beam evaporation. The devices are fabricated without damaging the active layers. The SAS electrodes have high transmittance (82.5%) and low sheet resistance (8 Ω/sq). High performance devices with hole and electron mobilities of 0.3 cm{sup 2}/V s and 0.027 cm{sup 2}/V s, respectively, and average visible range transmittance of 72% were obtained. These transistors have potential for transparent logic integrated circuit applications.

  20. High-Performance Solution-Deposited Ambipolar Organic Transistors Based on Terrylene Diimides

    DEFF Research Database (Denmark)

    Liu, Chuan; Liu, Zhihong; Lemke, Henrik T.

    2010-01-01

    The thin film transistor characteristics of a soluble molecular semiconductor, terrylene tetracarboxdiimide (TDI), a homologue of perylene tetracarboxdiimide (PDI), have been investigated. In a bottom-gate device structure with benzocyclobutene gate dielectric, n-type behavior with electron...... mobility of 1.1 × 10−2 cm2 V−1 s−1 has been observed after thermal annealing. When applied in the top-gate structure with a polycyclohexylethylene-based gate dielectric, TDI devices exhibit ambipolar transport with electron and hole mobility of 7.2 × 10−3 cm2 V−1 s−1 and 2.2 × 10−3 cm2 V−1 s−1 respectively...

  1. Ambipolar thermoelectric power of chemically-exfoliated RuO2 nanosheets

    Science.gov (United States)

    Kim, Jeongmin; Yoo, Somi; Moon, Hongjae; Kim, Se Yun; Ko, Dong-Su; Roh, Jong Wook; Lee, Wooyoung

    2018-01-01

    The electrical conductivity and Seebeck coefficient of RuO2 nanosheets are enhanced by metal nanoparticle doping using Ag-acetate solutions. In this study, RuO2 monolayer and bilayer nanosheets exfoliated from layered alkali metal ruthenates are transferred to Si substrates for device fabrication, and the temperature dependence of their conductivity and Seebeck coefficients is investigated. For pristine RuO2 nanosheets, the sign of the Seebeck coefficient changes with temperature from 350-450 K. This indicates that the dominant type of charge carrier is dependent on the temperature, and the RuO2 nanosheets show ambipolar carrier transport behavior. By contrast, the sign of the Seebeck coefficient for Ag nanoparticle-doped RuO2 nanosheets does not change with temperature, indicating that the extra charge carriers from metal nanoparticles promote n-type semiconductor behavior.

  2. Azaisoindigo conjugated polymers for high performance n-type and ambipolar thin film transistor applications

    KAUST Repository

    Yue, Wan

    2016-09-28

    Two new alternating copolymers, PAIIDBT and PAIIDSe have been prepared by incorporating a highly electron deficient azaisoindigo core. The molecular structure and packing of the monomer is determined from the single crystal X-ray diffraction. Both polymers exhibit high EAs and highly planar polymer backbones. When polymers are used as the semiconducting channel for solution-processed thin film transistor application, good properties are observed. A–A type PAIIDBT exhibits unipolar electron mobility as high as 1.0 cm2 V−1 s−1, D–A type PAIIDSe exhibits ambipolar charge transport behavior with predominately electron mobility up to 0.5 cm2 V−1 s−1 and hole mobility to 0.2 cm2 V−1 s−1. The robustness of the extracted mobility values are also commented on in detail. Molecular orientation, thin film morphology and energetic disorder of both polymers are systematically investigated.

  3. Ambipolar carrier transport properties and molecular packing structure of octahexyl-substituted copper phthalocyanine

    Science.gov (United States)

    Watanabe, Ken; Watanabe, Koichi; Tohnai, Norimitsu; Itani, Hiromichi; Shimizu, Yo; Fujii, Akihiko; Ozaki, Masanori

    2018-04-01

    The charge carrier mobility of a solution-processable low-molecular-weight organic semiconductor material, i.e., 1,4,8,11,15,18,22,25-octahexylphthalocyanine copper complex (C6PcCu), was investigated by the time-of-flight technique. The anomalous ambipolar carrier mobility was discussed from the viewpoint of the molecular packing structure, which was clarified by single-crystal X-ray structure analysis. In the comparison between the molecular packing structures of C6PcCu and its metal-free-type homologue, it was found that the difference in carrier mobility originates from the rotation of the molecule, which is caused by the steric hindrance due to the introduction of a center metal and the interpenetration of the nonperipheral alkyl chains.

  4. Effects of electric and magnetic fields on the electronic properties of zigzag carbon and boron nitride nanotubes

    Science.gov (United States)

    Chegel, Raad; Behzad, Somayeh; Ahmadi, Eghbal

    2012-04-01

    We have investigated the electronic properties of zigzag CNTs and BNNTs under the external transverse electric field and axial magnetic field, using tight binding approximation. It was found that after switching on the electric and magnetic fields, the band modification such as distortion of the degeneracy, change in energy dispersion, subband spacing and band gap size reduction occurs. The band gap of zigzag BNNTs decreases linearly with increasing the electric field strength but the band gap variation for CNTs increases first and later decreases (Metallic) or first hold constant and then decreases (semiconductor). For type (II) CNTs, at a weak magnetic field, by increasing the electric field strength, the band gap remains constant first and then decreases and in a stronger magnetic field the band gap reduction becomes parabolic. For type (III) CNTs, in any magnetic field, the band gap increases slowly until reaches a maximum value and then decreases linearly. Unlike to CNTs, the magnetic field has less effects on the BNNTs band gap variation.

  5. Bioelectronic Nose Using Odorant Binding Protein-Derived Peptide and Carbon Nanotube Field-Effect Transistor for the Assessment of Salmonella Contamination in Food.

    Science.gov (United States)

    Son, Manki; Kim, Daesan; Kang, Jinkyung; Lim, Jong Hyun; Lee, Seung Hwan; Ko, Hwi Jin; Hong, Seunghun; Park, Tai Hyun

    2016-12-06

    Salmonella infection is the one of the major causes of food borne illnesses including fever, abdominal pain, diarrhea, and nausea. Thus, early detection of Salmonella contamination is important for our healthy life. Conventional detection methods for the food contamination have limitations in sensitivity and rapidity; thus, the early detection has been difficult. Herein, we developed a bioelectronic nose using a carbon nanotube (CNT) field-effect transistor (FET) functionalized with Drosophila odorant binding protein (OBP)-derived peptide for easy and rapid detection of Salmonella contamination in ham. 3-Methyl-1-butanol is known as a specific volatile organic compound, generated from the ham contaminated with Salmonella. We designed and synthesized the peptide based on the sequence of the Drosophila OBP, LUSH, which specifically binds to alcohols. The C-terminus of the synthetic peptide was modified with three phenylalanine residues and directly immobilized onto CNT channels using the π-π interaction. The p-type properties of FET were clearly maintained after the functionalization using the peptide. The biosensor detected 1 fM of 3-methyl-1-butanol with high selectivity and successfully assessed Salmonella contamination in ham. These results indicate that the bioelectronic nose can be used for the rapid detection of Salmonella contamination in food.

  6. Improving band-to-band tunneling in a tunneling carbon nanotube field effect transistor by multi-level development of impurities in the drain region

    Science.gov (United States)

    Naderi, Ali; Ghodrati, Maryam

    2017-12-01

    In this paper, in order to improve the performance of a tunneling carbon nanotube field effect transistor (T-CNTFET) a new structure is proposed using multi-level impurity distribution along the drain region. The new T-CNTFET structure consists of six parts in the drain with stepwise doping distribution. The impurities on the drain side are n -type and the length of each region is 5nm. Electronic features of the proposed structure are simulated by the solution of Poisson and Schrödinger equations and the self-consistent method using Non-equilibrium Green's Function (NEGF). Simulation results show that the proposed structure reduces the band curvature near the drain-channel connection and widens the tunneling barrier. As a result, band-to-band tunneling and the OFF current are reduced and the ON/OFF current ratio increases in comparison with the conventional structure. In summary, by improving the subthreshold swing parameters, delay time, power delay product ( PDP and cut-off frequency compared to the conventional structure, the proposed structure can be considered as a proper candidate for digital applications with high speed and low power dissipation.

  7. Sensing Properties of Multiwalled Carbon Nanotubes Grown in MW Plasma Torch: Electronic and Electrochemical Behavior, Gas Sensing, Field Emission, IR Absorption

    Directory of Open Access Journals (Sweden)

    Petra Majzlíková

    2015-01-01

    Full Text Available Vertically aligned multi-walled carbon nanotubes (VA-MWCNTs with an average diameter below 80 nm and a thickness of the uniform VA-MWCNT layer of about 16 µm were grown in microwave plasma torch and tested for selected functional properties. IR absorption important for a construction of bolometers was studied by Fourier transform infrared spectroscopy. Basic electrochemical characterization was performed by cyclic voltammetry. Comparing the obtained results with the standard or MWCNT‑modified screen-printed electrodes, the prepared VA-MWCNT electrodes indicated their high potential for the construction of electrochemical sensors. Resistive CNT gas sensor revealed a good sensitivity to ammonia taking into account room temperature operation. Field emission detected from CNTs was suitable for the pressure sensing application based on the measurement of emission current in the diode structure with bending diaphragm. The advantages of microwave plasma torch growth of CNTs, i.e., fast processing and versatility of the process, can be therefore fully exploited for the integration of surface-bound grown CNTs into various sensing structures.

  8. 3D assembly of carbon nanotubes for fabrication of field-effect transistors through nanomanipulation and electron-beam-induced deposition

    International Nuclear Information System (INIS)

    Yu, Ning; Shi, Qing; Wang, Huaping; Huang, Qiang; Fukuda, Toshio; Nakajima, Masahiro; Yang, Zhan; Sun, Lining

    2017-01-01

    Three-dimensional carbon nanotube field-effect transistors (3D CNTFETs) possess predictable characteristics that rival those of planar CNTFETs and Si-based MOSFETs. However, due to the lack of a reliable assembly technology, they are rarely reported on, despite the amount of attention they receive. To address this problem, we propose the novel concept of a 3D CNTFET and develop its assembly strategy based on nanomanipulation and the electron-beam-induced deposition (EBID) technique inside a scanning electron microscope (SEM). In particular, the electrodes in our transistor design are three metallic cuboids of the same size, and their front, top and back surfaces are all wrapped up in CNTs. The assembly strategy is employed to build the structure through a repeated basic process of pick-up, placement, fixing and cutting of CNTs. The pick-up and placement is performed through one nanomanipulator with four degrees of freedom. Fixing is carried out through the EBID technique so as to improve the mechanical and electrical characteristics of the CNT/electrodes connection. CNT cutting is undertaken using the typical method of electrical breakdown. Experimental results showed that two CNTs were successfully assembled on the front sides of the cubic electrodes. This validates our assembly method for the 3D CNTFET. Also, when contact resistance was measured, tens of kilohms of resistance was observed at the CNT-EBID deposition-FET electrodes junction.. This manifests the electrical reliability of our assembly strategy. (paper)

  9. Performance and Design Considerations of a Novel Dual-Material Gate Carbon Nanotube Field-Effect Transistors: Nonequilibrium Green's Function Approach

    Science.gov (United States)

    Arefinia, Zahra; Orouji, Ali A.

    2009-02-01

    The concept of dual-material gate (DMG) is applied to the carbon nanotube field-effect transistor (CNTFET) with doped source and drain extensions, and the features exhibited by the resulting new structure, i.e., the DMG-CNTFET structure, have been examined for the first time by developing a two-dimensional (2D) full quantum simulation. The simulations have been done by the self-consistent solution of 2D Poisson-Schrödinger equations, within the nonequilibrium Green's function (NEGF) formalism. The results show DMG-CNTFET decreases significantly leakage current and drain conductance and increases on-off current ratio and voltage gain as compared to the single material gate counterparts CNTFET. It is seen that short channel effects in this structure are suppressed because of the perceivable step in the surface potential profile, which screens the drain potential. Moreover, these unique features can be controlled by engineering the workfunction and length of the gate metals. Therefore, this work provides an incentive for further experimental exploration.

  10. Electro-optical properties of zigzag and armchair boron nitride nanotubes under a transverse electric field: Tight binding calculations

    Science.gov (United States)

    Chegel, Raad; Behzad, Somayeh

    2012-02-01

    The electro-optical properties of zigzag and armchair BNNTs in a uniform transverse electric field are investigated within tight binding approximation. It is found that the electric field modifies the band structure and splits band degeneracy where these effects reflect in the DOS and JDOS spectra. A decrease in the band gap, as a function of the electric field, is observed. This gap reduction increases with the diameter and it is independent of chirality. An analytic function to estimate the electric field needed for band gap closing is proposed which is in good agreement with DFT results. In additional, we show that the larger diameter tubes are more sensitive than small ones. Number and position of peaks in DOS and JDOS spectra for armchair and zigzag tubes with similar radius are dependent on electric field strength.

  11. Dielectrophoretic assembly of carbon nanotube devices

    DEFF Research Database (Denmark)

    Dimaki, Maria

    The purpose of this project has been to assemble single-walled carbon nanotubes on electrodes at the tip of a biocompatible cantilever and use these for chemical species sensing in air and liquid, for example in order to measure the local activity from ion channels in the cell membrane....... The electrical resistance of carbon nanotubes has been shown to be extremely sensitive to gas molecules. Dielectrophoresis is a method capable of quickly attracting nanotubes on microelectrodes by using an electric field, thus enabling nanotube integration in microsystems. Dielectrophoresis offers also....... A model for the dielectrophoretic assembly of carbon nanotubes on microelectrodes was developed and several simulations were conducted using values from the available literature for the various key parameters. The model can give qualitative results regarding the parameters dominating the dielectrophoretic...

  12. Synthesis and characterization of carbon nanotubes

    Science.gov (United States)

    Ritschel, Manfred; Bartsch, Karl; Leonhardt, Albrecht; Graff, Andreas; Täschner, Christine; Fink, Jörg

    2001-11-01

    The catalytic chemical vapor deposition (CCVD) is a very promising process with respect to large scale production of different kinds of carbon nanostructures. By modifying the deposition temperature, the catalyst material and the hydrocarbon nanofibers with herringbone structure, multi-walled nanotubes with tubular structure and single-walled nanotubes were deposited. Furthermore, layers of aligned multi-walled nanotubes could be obtained on oxidized silicon substrates coated with thin sputtered metal layers (Co, permalloy) as well as onto WC-Co hardmetals by using the microwave assisted plasma CVD process (MWCVD). The obtained carbon modifications were characterized by scanning (SEM) and transmission (TEM) electron microscopy. The hydrogen storage capability of the nanofibers and nanotubes and the electron field emission of the nanotube layers was investigated.

  13. Carbon nanotube composite materials

    Science.gov (United States)

    O'Bryan, Gregory; Skinner, Jack L; Vance, Andrew; Yang, Elaine Lai; Zifer, Thomas

    2015-03-24

    A material consisting essentially of a vinyl thermoplastic polymer, un-functionalized carbon nanotubes and hydroxylated carbon nanotubes dissolved in a solvent. Un-functionalized carbon nanotube concentrations up to 30 wt % and hydroxylated carbon nanotube concentrations up to 40 wt % can be used with even small concentrations of each (less than 2 wt %) useful in producing enhanced conductivity properties of formed thin films.

  14. Bandstructure modulation for Si-h and Si-g nanotubes in a transverse electric field: Tight binding approach

    Science.gov (United States)

    Chegel, Raad; Behzad, Somayeh

    2013-11-01

    We have investigated the electronic properties of SiNTs, under the external electric field, using Tight Binding (TB) approximation. It was found that the energy levels, energy gaps, and density of states (DOS) strongly depend on the electric field strength. The large electric strength leads to coupling the neighbor subbands and induce destruction of subband degeneracy, increase of low-energy states, and strong modulation of energy gap which these effects reflect in the DOS spectrum. It has been shown that, the band gap reduction of Si g-NTs is linearly proportional to the electric field strength. The band gap variation for Si h-NTs increases first and later decreases (Metallic) or first remains constant and then decreases (semiconductor). Also we show that the larger diameter tubes are more sensitive to the field strength than smaller ones. The semiconducting metallic transition or vice versa can be achieved through an increasing of applied fields. Number and position of peaks in DOS spectrum are dependent on electric field strength.

  15. Preparation of carbon nanotubes from vacuum pyrolysis of polycarbosilane

    International Nuclear Information System (INIS)

    Jou, S.; Hsu, C.K.

    2004-01-01

    Carbon nanotubes (CNTs) were synthesized by vacuum pyrolysis of two types of polycarbosilane (PCS) with iron nano-particles between 800 and 1100 deg. C. Straight nanotubes were obtained from low molecular weight (990 g/mol) PCS whereas curled nanotubes were derived from medium molecular weight (1290 g/mol) PCS. Diameters of these straight and curled nanotubes were between 5 and 20 nm. The mechansim of condensed phase growth of carbon nanotubes was discussed. Electron emission capability of these carbon nanotubes increased with their pyrolyzing temperature. The electric fields required to emit a current density of 10 -2 A/cm 2 from the straight nanotubes being pyrolyzed at 800, 900, 1000, and 1100 deg. C were 1.17, 0.73, 0.67, and 0.33 V/μm, respectively

  16. The study of explosive emission from carbon nanotubes

    International Nuclear Information System (INIS)

    Korenev, Sergey

    2002-01-01

    The carbon nanotubes (CNT) found applications for high density current electron emitters. The main interest for forming of high current electron beams using CNT is high concentration of electrical field on the nanotubes and high value of yield by electrons for field emission. The experimental results for time processes of forming cathode plasma and extraction of electron beam are presented in the report

  17. On/off ratio enhancement in single-walled carbon nanotube field-effect transistor by controlling network density via sonication

    Science.gov (United States)

    Jang, Ho-Kyun; Choi, Jun Hee; Kim, Do-Hyun; Kim, Gyu Tae

    2018-06-01

    Single-walled carbon nanotube (SWCNT) is generally used as a networked structure in the fabrication of a field-effect transistor (FET) since it is known that one-third of SWCNT is electrically metallic and the remains are semiconducting. In this case, the presence of metallic paths by metallic SWCNT (m-SWCNT) becomes a significant technical barrier which hinders the networks from achieving a semiconducting behavior, resulting in a low on/off ratio. Here, we report on an easy method of controlling the on/off ratio of a FET where semiconducting SWCNT (s-SWCNT) and m-SWCNT constitute networks between source and drain electrodes. A FET with SWCNT networks was simply sonicated under water to control the on/off ratio and network density. As a result, the FET having an almost metallic behavior due to the metallic paths by m-SWCNT exhibited a p-type semiconducting behavior. The on/off ratio ranged from 1 to 9.0 × 104 along sonication time. In addition, theoretical calculations based on Monte-Carlo method and circuit simulation were performed to understand and explain the phenomenon of a change in the on/off ratio and network density by sonication. On the basis of experimental and theoretical results, we found that metallic paths contributed to a high off-state current which leads to a low on/off ratio and that sonication formed sparse SWCNT networks where metallic paths of m-SWCNT were removed, resulting in a high on/off ratio. This method can open a chance to save the device which has been considered as a failed one due to a metallic behavior by a high network density leading to a low on/off ratio.

  18. Carbon Nanotubes as Optical Sensors in Biomedicine.

    Science.gov (United States)

    Farrera, Consol; Torres Andón, Fernando; Feliu, Neus

    2017-11-28

    Single-walled carbon nanotubes (SWCNTs) have become potential candidates for a wide range of medical applications including sensing, imaging, and drug delivery. Their photophysical properties (i.e., the capacity to emit in the near-infrared), excellent photostability, and fluorescence, which is highly sensitive to the local environment, make SWCNTs promising optical probes in biomedicine. In this Perspective, we discuss the existing strategies for and challenges of using carbon nanotubes for medical diagnosis based on intracellular sensing as well as discuss also their biocompatibility and degradability. Finally, we highlight the potential improvements of this nanotechnology and future directions in the field of carbon nanotubes for biomedical applications.

  19. EDITORIAL: Focus on Carbon Nanotubes

    Science.gov (United States)

    2003-09-01

    The study of carbon nanotubes, since their discovery by Iijima in 1991, has become a full research field with significant contributions from all areas of research in solid-state and molecular physics and also from chemistry. This Focus Issue in New Journal of Physics reflects this active research, and presents articles detailing significant advances in the production of carbon nanotubes, the study of their mechanical and vibrational properties, electronic properties and optical transitions, and electrical and transport properties. Fundamental research, both theoretical and experimental, represents part of this progress. The potential applications of nanotubes will rely on the progress made in understanding their fundamental physics and chemistry, as presented here. We believe this Focus Issue will be an excellent guide for both beginners and experts in the research field of carbon nanotubes. It has been a great pleasure to edit the many excellent contributions from Europe, Japan, and the US, as well from a number of other countries, and to witness the remarkable effort put into the manuscripts by the contributors. We thank all the authors and referees involved in the process. In particular, we would like to express our gratitude to Alexander Bradshaw, who invited us put together this Focus Issue, and to Tim Smith and the New Journal of Physics staff for their extremely efficient handling of the manuscripts. Focus on Carbon Nanotubes Contents Transport theory of carbon nanotube Y junctions R Egger, B Trauzettel, S Chen and F Siano The tubular conical helix of graphitic boron nitride F F Xu, Y Bando and D Golberg Formation pathways for single-wall carbon nanotube multiterminal junctions Inna Ponomareva, Leonid A Chernozatonskii, Antonis N Andriotis and Madhu Menon Synthesis and manipulation of carbon nanotubes J W Seo, E Couteau, P Umek, K Hernadi, P Marcoux, B Lukic, Cs Mikó, M Milas, R Gaál and L Forró Transitional behaviour in the transformation from active end

  20. Highly stable carbon nanotube field emitters on small metal tips against electrical arcing for miniature X-ray tubes

    International Nuclear Information System (INIS)

    Ha, Jun Mok; Kim, Hyun Jin; Kim, Hyun Nam; Raza, Hamid Saeed; Cho, Sung Oh

    2015-01-01

    If CNT emitters are operated at a high voltage or at a high electric field, electrical arcing (or vacuum breakdown) can occur. Arcing can be initiated by the removed CNTs, impurities on the CNTs or substrates, protrusion of CNTs, low operating vacuum, and a very high electric field. Since arcing is accompanied with a very high current flow and it can produce plasma channel near the emitter, CNTs are seriously damaged or sometimes CNTs are almost completely removed from the substrate by the arcing events. Detachment of CNTs from a substrate is an irreversible catastrophic phenomenon for a device operation. In addition to the detachment of CNTs, arcing induces a sudden voltage drop and thus device operation is stopped. The metal mixture strongly attached CNTs to the tip substrate. Due to the strong adhesion, CNT emitters could be pre-treated with electrical conditioning process without seriously damaging the CNTs even though many intense arcing events were induced at the small and sharp geometry of the tip substrate. Impurities that were loosely bound to the substrates were almost removed and CNTs heights became uniform after the electrical conditioning process

  1. Growth of nanotubes and chemical sensor applications

    Science.gov (United States)

    Hone, James; Kim, Philip; Huang, X. M. H.; Chandra, B.; Caldwell, R.; Small, J.; Hong, B. H.; Someya, T.; Huang, L.; O'Brien, S.; Nuckolls, Colin P.

    2004-12-01

    We have used a number of methods to grow long aligned single-walled carbon nanotubes. Geometries include individual long tubes, dense parallel arrays, and long freely suspended nanotubes. We have fabricated a variety of devices for applications such as multiprobe resistance measurement and high-current field effect transistors. In addition, we have measured conductance of single-walled semiconducting carbon nanotubes in field-effect transistor geometry and investigated the device response to water and alcoholic vapors. We observe significant changes in FET drain current when the device is exposed to various kinds of different solvent. These responses are reversible and reproducible over many cycles of vapor exposure. Our experiments demonstrate that carbon nanotube FETs are sensitive to a wide range of solvent vapors at concentrations in the ppm range.

  2. Batch fabrication of nanotubes suspended between microelectrodes

    DEFF Research Database (Denmark)

    Mateiu, Ramona Valentina; Stöckli, T.; Knapp, H. F.

    2007-01-01

    be done with a simple lift-off process with standard photolithographic resist. An applied electric field is sustained between the microelectrodes during CVD to guide the nanotube growth. Comparison with simulations shows that the location and the orientation of the grown carbon nanotubes (CNT) correspond...... to the regions of maximum electric field, enabling accurate positioning of a nanotube by controlling the shape of the microelectrodes. The CNT bridges are deflected tens of nm when a DC voltage is applied between the nanotube and a gate microelectrode indicating that the clamping through the catalyst particles...... is not only mechanically stable but also electrical conducting. This method could be used to fabricate nanoelectromechanical systems based on suspended double clamped CNTs depending only on photolithography and standard Cleanroom processes....

  3. Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate

    International Nuclear Information System (INIS)

    Che, Yongli; Zhang, Yating; Song, Xiaoxian; Cao, Mingxuan; Zhang, Guizhong; Yao, Jianquan; Cao, Xiaolong; Dai, Haitao; Yang, Junbo

    2016-01-01

    Using only solution processing methods, we developed ambipolar quantum-dot (QD) transistor floating-gate memory (FGM) that uses Au nanoparticles as a floating gate. Because of the bipolarity of the active channel of PbSe QDs, the memory could easily trap holes or electrons in the floating gate by programming/erasing (P/E) operations, which could shift the threshold voltage both up and down. As a result, the memory exhibited good programmable memory characteristics: a large memory window (ΔV th  ∼ 15 V) and a long retention time (>10 5  s). The magnitude of ΔV th depended on both P/E voltages and the bias voltage (V DS ): ΔV th was a cubic function to V P/E and linearly depended on V DS . Therefore, this FGM based on a QD transistor is a promising alternative to its inorganic counterparts owing to its advantages of bipolarity, high mobility, low cost, and large-area production.

  4. Energize Electrochemical Double Layer Capacitor by Introducing an Ambipolar Organic Redox Radical in Electrolyte.

    Science.gov (United States)

    Wang, Yonggang; Hu, Lintong; Zhang, Yue; Shi, Chao; Guo, Kai; Zhai, Tianyou; Li, Huiqiao

    2018-05-24

    Carbon based electrochemical double layer capacitors (EDLCs) generally exhibit high power and long life, but low energy density/capacitance. Pore/morphology optimization and pseudocapacitive materials modification of carbon materials have been used to improve electrode capacitance, but leading to the consumption of tap density, conductivity and stability. Introducing soluble redox mediators into electrolyte is a promising alternative to improve the capacitance of electrode. However, it is difficult to find one redox mediator that can provide additional capacitance for both positive and negative electrodes simultaneously. Here, an ambipolar organic radical, 2, 2, 6, 6-tetramethylpiperidinyloxyl (TEMPO) is first introduced to the electrolyte, which can substantially contribute additional pseudocapacitance by oxidation at the positive electrode and reduction at the negative electrode simultaneously. The EDLC with TEMPO mediator delivers an energy density as high as 51 Wh kg-1, 2.4 times of the capacitor without TEMPO, and a long cycle stability over 4000 cycles. The achieved results potentially point a new way to improve the energy density of EDLCs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. INCORPORATING AMBIPOLAR AND OHMIC DIFFUSION IN THE AMR MHD CODE RAMSES

    International Nuclear Information System (INIS)

    Masson, J.; Mulet-Marquis, C.; Chabrier, G.; Teyssier, R.; Hennebelle, P.

    2012-01-01

    We have implemented non-ideal magnetohydrodynamics (MHD) effects in the adaptive mesh refinement code RAMSES, namely, ambipolar diffusion and Ohmic dissipation, as additional source terms in the ideal MHD equations. We describe in details how we have discretized these terms using the adaptive Cartesian mesh, and how the time step is diminished with respect to the ideal case, in order to perform a stable time integration. We have performed a large suite of test runs, featuring the Barenblatt diffusion test, the Ohmic diffusion test, the C-shock test, and the Alfvén wave test. For the latter, we have performed a careful truncation error analysis to estimate the magnitude of the numerical diffusion induced by our Godunov scheme, allowing us to estimate the spatial resolution that is required to address non-ideal MHD effects reliably. We show that our scheme is second-order accurate, and is therefore ideally suited to study non-ideal MHD effects in the context of star formation and molecular cloud dynamics.

  6. Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate

    Energy Technology Data Exchange (ETDEWEB)

    Che, Yongli; Zhang, Yating, E-mail: yating@tju.edu.cn; Song, Xiaoxian; Cao, Mingxuan; Zhang, Guizhong; Yao, Jianquan [Institute of Laser and Opto-Electronics, College of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072 (China); Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072 (China); Cao, Xiaolong [Institute of Laser and Opto-Electronics, College of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072 (China); Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072 (China); College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao 266590 (China); Dai, Haitao [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Yang, Junbo [Center of Material Science, National University of Defense Technology, Changsha 410073 (China)

    2016-07-04

    Using only solution processing methods, we developed ambipolar quantum-dot (QD) transistor floating-gate memory (FGM) that uses Au nanoparticles as a floating gate. Because of the bipolarity of the active channel of PbSe QDs, the memory could easily trap holes or electrons in the floating gate by programming/erasing (P/E) operations, which could shift the threshold voltage both up and down. As a result, the memory exhibited good programmable memory characteristics: a large memory window (ΔV{sub th} ∼ 15 V) and a long retention time (>10{sup 5 }s). The magnitude of ΔV{sub th} depended on both P/E voltages and the bias voltage (V{sub DS}): ΔV{sub th} was a cubic function to V{sub P/E} and linearly depended on V{sub DS}. Therefore, this FGM based on a QD transistor is a promising alternative to its inorganic counterparts owing to its advantages of bipolarity, high mobility, low cost, and large-area production.

  7. Ambipolarity reduction in DMG asymmetric vacuum dielectric Schottky Barrier GAA MOSFET to improve hot carrier reliability

    Science.gov (United States)

    Kumar, Manoj; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

    2017-11-01

    An explicit surface potential and subthreshold current model for novel Dual Metal Gate (DMG) Asymmetric Vacuum (AV) as gate dielectric Schottky Barrier (SB) Cylindrical Gate All Around (CGAA) MOSFET with the incorporation of localized charges (Nf) is developed to provide excellent immunity against threshold voltage (Vth) degradation due to hot carriers. Hot carrier induced Localized Charges (LC) either positive or negative leads to degrade the threshold of the device. The major advantage of the proposed DMG-AV-SB-CGAA MOSFET is that it mitigates the ambipolar behavior thus offering very good on current to off current ratio; and also reduces the electron temperature which leads to less hot carrier generation thus lesser degradation in Vth and improved Hot Carrier reliability. The surface potential is determined for three different regions by solving 1-D Poisson's and 2-D Laplace equation through separation of variable method to facilitate an optimal model for calculating the subthreshold drain current from Si-SiO2 interface boundary. The developed model results are in good agreement with that of ATLAS-TCAD simulation.

  8. Controlled Deposition and Alignment of Carbon Nanotubes

    Science.gov (United States)

    Smits, Jan M. (Inventor); Wincheski, Russell A. (Inventor); Patry, JoAnne L. (Inventor); Watkins, Anthony Neal (Inventor); Jordan, Jeffrey D. (Inventor)

    2012-01-01

    A carbon nanotube (CNT) attraction material is deposited on a substrate in the gap region between two electrodes on the substrate. An electric potential is applied to the two electrodes. The CNT attraction material is wetted with a solution defined by a carrier liquid having carbon nanotubes (CNTs) suspended therein. A portion of the CNTs align with the electric field and adhere to the CNT attraction material. The carrier liquid and any CNTs not adhered to the CNT attraction material are then removed.

  9. Dephasing and hyperfine interaction in carbon nanotubes double quantum dots

    DEFF Research Database (Denmark)

    Reynoso, Andres Alejandro; Flensberg, Karsten

    2012-01-01

    We study theoretically the return probability experiment, which is used to measure the dephasing time T-2*, in a double quantum dot (DQD) in semiconducting carbon nanotubes with spin-orbit coupling and disorder-induced valley mixing. Dephasing is due to hyperfine interaction with the spins of the C...... with these for DQDs in clean nanotubes, whereas the disorder effect is always relevant when the magnetic field is perpendicular to the nanotube axis....

  10. Nanotubes and nanowires

    Indian Academy of Sciences (India)

    Unknown

    junction nanotubes by the pyrolysis of appropriate organic precursors. ... By making use of carbon nanotubes, nanowires of metals, metal ..... The use of activated carbon in place of ..... required for the complete removal of the carbon template.

  11. Carbon nanotube nanoelectrode arrays

    Science.gov (United States)

    Ren, Zhifeng; Lin, Yuehe; Yantasee, Wassana; Liu, Guodong; Lu, Fang; Tu, Yi

    2008-11-18

    The present invention relates to microelectode arrays (MEAs), and more particularly to carbon nanotube nanoelectrode arrays (CNT-NEAs) for chemical and biological sensing, and methods of use. A nanoelectrode array includes a carbon nanotube material comprising an array of substantially linear carbon nanotubes each having a proximal end and a distal end, the proximal end of the carbon nanotubes are attached to a catalyst substrate material so as to form the array with a pre-determined site density, wherein the carbon nanotubes are aligned with respect to one another within the array; an electrically insulating layer on the surface of the carbon nanotube material, whereby the distal end of the carbon nanotubes extend beyond the electrically insulating layer; a second adhesive electrically insulating layer on the surface of the electrically insulating layer, whereby the distal end of the carbon nanotubes extend beyond the second adhesive electrically insulating layer; and a metal wire attached to the catalyst substrate material.

  12. The effect of dry shear aligning of nanotube thin films on the photovoltaic performance of carbon nanotube-silicon solar cells.

    Science.gov (United States)

    Stolz, Benedikt W; Tune, Daniel D; Flavel, Benjamin S

    2016-01-01

    Recent results in the field of carbon nanotube-silicon solar cells have suggested that the best performance is obtained when the nanotube film provides good coverage of the silicon surface and when the nanotubes in the film are aligned parallel to the surface. The recently developed process of dry shear aligning - in which shear force is applied to the surface of carbon nanotube thin films in the dry state, has been shown to yield nanotube films that are very flat and in which the surface nanotubes are very well aligned in the direction of shear. It is thus reasonable to expect that nanotube films subjected to dry shear aligning should outperform otherwise identical films formed by other processes. In this work, the fabrication and characterisation of carbon nanotube-silicon solar cells using such films is reported, and the photovoltaic performance of devices produced with and without dry shear aligning is compared.

  13. Review on properties, dispersion and toxicology of carbon nanotubes

    International Nuclear Information System (INIS)

    Saeed, K.

    2010-01-01

    Carbon nanotubes (CNTs) have the most intensely studied nano structures because of their unique properties. There are two types of carbon nanotubes CNTs, single-walled carbon nanotubes (SWNTs) and multi-walled carbon nanotubes (MWNTs), prepared by chemical-vapour deposition (CVD), plasma enhanced chemical-vapour deposition, thermal chemical vapour deposition, Vapour phase growth, Arc discharge and Lasser ablation. Both single-walled carbon nanotubes (SWNTs) and multi-walled carbon nanotubes (MWNTs) possess high mechanical and electrical conductivity, ultra-light weight, high aspect ratio and have excellent chemical and thermal stabilities. They also possess semi- and metallic-conductive properties depending upon their chirality. This review focuses on progress toward functionalization (not only dispersed nano tube but also dramatically improve their solubility), preparation and purification, composites and the toxicity of the carbon nanotubes (CNTs). The functional groups attached to carbon nanotubes (CNTs) should react with polymers and improve the mechanical properties of the nano composites. Carbon nanotubes (CNTs) has significant application in pharmaceutical field such as drug delivery and nano medicine, but the available literature also suggests that carbon nanotubes (CNTs) may have unusual toxicity and have more adverse effects than the same mass of nano size carbon and quartz. (author)

  14. Dipolar interaction in arrays of magnetic nanotubes

    International Nuclear Information System (INIS)

    Velázquez-Galván, Y; Martínez-Huerta, J M; Encinas, A; De La Torre Medina, J; Danlée, Y; Piraux, L

    2014-01-01

    The dipolar interaction field in arrays of nickel nanotubes has been investigated on the basis of expressions derived from the effective demagnetizing field of the assembly as well as magnetometry measurements. The model incorporates explicitly the wall thickness and aspect ratio, as well as the spatial order of the nanotubes. The model and experiment show that the interaction field in nanotubes is smaller than that in solid nanowires due to the packing fraction reduction in tubes related to their inner cavity. Finally, good agreement between the model and experiment is found for the variation of the interaction field as a function of the tube wall thickness. (paper)

  15. Liquid crystalline order of carbon nanotubes

    Science.gov (United States)

    Georgiev, Georgi; Ahlawat, Aditya; Mulkern, Brian; Doyle, Robert; Mongeau, Jennifer; Ogilvie, Alex

    2007-03-01

    Topological defects formed during phase transitions in liquid crystals provide a direct proof of the standard Cosmological model and are direct links to the Early Universe. On the other hand in Nanotechnology, carbon nanotubes can be manipulated and oriented directly by changing the liquid crystalline state of the nanotubes, in combination with organic liquid crystals. Currently there are no nano-assemblers, which makes the liquid crystal state of the nanotubes, one of the few ways of controlling them. We show the design of a fast and efficient polarized light ellipsometric system (a new modification of previous optical systems) that can provide fast quantitative real time measurements in two dimensions of the formation of topological defects in liquid crystals during phase transitions in lab settings. Our aim is to provide fundamental information about the formation of optically anisotropic structures in liquid crystals and the orientation of carbon nanotubes in electric field.

  16. Carbon nanotube based stationary phases for microchip chromatography

    DEFF Research Database (Denmark)

    Mogensen, Klaus Bo; Kutter, Jörg Peter

    2012-01-01

    already been demonstrated in more classical formats, for improved separation performance in gas and liquid chromatography, and for unique applications in solid phase extraction. Carbon nanotubes are now also entering the field of microfluidics, where there is a large potential to be able to provide......The objective of this article is to provide an overview and critical evaluation of the use of carbon nanotubes and related carbon-based nanomaterials for microchip chromatography. The unique properties of carbon nanotubes, such as a very high surface area and intriguing adsorptive behaviour, have...... integrated, tailor-made nanotube columns by means of catalytic growth of the nanotubes inside the fluidic channels. An evaluation of the different implementations of carbon nanotubes and related carbon-based nanomaterials for microfluidic chromatography devices is given in terms of separation performance...

  17. Growth of anatase titanium dioxide nanotubes via anodization

    Directory of Open Access Journals (Sweden)

    Ed Adrian Dilla

    2012-06-01

    Full Text Available In this work, titanium dioxide nanotubes were grown via anodization of sputtered titanium thin films using different anodization parameters in order to formulate a method of producing long anatase titanium dioxide nanotubes intended for solar cell applications. The morphological features of the nanotubes grown via anodization were explored using a Philips XL30 Field Emission Scanning Electron Microscope. Furthermore, the grown nanotubes were also subjected to X-ray diffraction and Raman spectroscopy in order to investigate the effect of the predominant crystal orientation of the parent titanium thin film on the crystal phase of the nanotubes. After optimizing the anodization parameters, nanotubes with anatase TiO2 crystal phase and tube length more than 2 microns was produced from parent titanium thin films with predominant Ti(010 crystal orientation and using ammonium fluoride in ethylene glycol as an electrolyte with a working voltage equal to 60V during 1-hour anodization runs.

  18. Carbon nanotube based photocathodes

    International Nuclear Information System (INIS)

    Hudanski, Ludovic; Minoux, Eric; Schnell, Jean-Philippe; Xavier, Stephane; Pribat, Didier; Legagneux, Pierre; Gangloff, Laurent; Teo, Kenneth B K; Robertson, John; Milne, William I

    2008-01-01

    This paper describes a novel photocathode which is an array of vertically aligned multi-walled carbon nanotubes (MWCNTs), each MWCNT being associated with one p-i-n photodiode. Unlike conventional photocathodes, the functions of photon-electron conversion and subsequent electron emission are physically separated. Photon-electron conversion is achieved with p-i-n photodiodes and the electron emission occurs from the MWCNTs. The current modulation is highly efficient as it uses an optically controlled reconfiguration of the electric field at the MWCNT locations. Such devices are compatible with high frequency and very large bandwidth operation and could lead to their application in compact, light and efficient microwave amplifiers for satellite telecommunication. To demonstrate this new photocathode concept, we have fabricated the first carbon nanotube based photocathode using silicon p-i-n photodiodes and MWCNT bunches. Using a green laser, this photocathode delivers 0.5 mA with an internal quantum efficiency of 10% and an I ON /I OFF ratio of 30

  19. Novel fabrication of silica nanotubes using multi-walled carbon ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. Silica nanotubes were synthesized using multi-walled carbon nanotubes (MWCNTs) as template. The as-obtained samples were characterized by infrared spectroscopy (FTIR), X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscope (FE–SEM) and photo-.

  20. Alignment of carbon nanotubes in nematic liquid crystals

    NARCIS (Netherlands)

    Schoot, van der P.P.A.M.; Popa-Nita, V.; Kralj, S.

    2008-01-01

    The self-organizing properties of nematic liquid crystals can be used to align carbon nanotubes dispersed in them. Because the nanotubes are so much thinner than the elastic penetration length, the alignment is caused by the coupling of the unperturbed director field to the anisotropic interfacial

  1. Magnetoelectronic properties of chiral carbon nanotubes and tori

    International Nuclear Information System (INIS)

    Shyu, F L; Tsai, C C; Lee, C H; Lin, M F

    2006-01-01

    Magnetoelectronic properties of chiral carbon nanotubes and toroids are studied for any magnetic field. They are sensitive to the changes in the magnitude and the direction of the magnetic field, as well as the chirality. The important differences between chiral and achiral carbon nanotubes include band symmetry, band curvature, band crossing, band-edge state, state degeneracy, band spacing, energy gap, and semiconductor-metal transition. Carbon tori also exhibit the strong chirality dependence on the field modulation of discrete states. Chiral carbon tori might differ from chiral carbon nanotubes in energy-gap modulation, density of states, and state degeneracy

  2. Charge plasma based source/drain engineered Schottky Barrier MOSFET: Ambipolar suppression and improvement of the RF performance

    Science.gov (United States)

    Kale, Sumit; Kondekar, Pravin N.

    2018-01-01

    This paper reports a novel device structure for charge plasma based Schottky Barrier (SB) MOSFET on ultrathin SOI to suppress the ambipolar leakage current and improvement of the radio frequency (RF) performance. In the proposed device, we employ dual material for the source and drain formation. Therefore, source/drain is divided into two parts as main source/drain and source/drain extension. Erbium silicide (ErSi1.7) is used as main source/drain material and Hafnium metal is used as source/drain extension material. The source extension induces the electron plasma in the ultrathin SOI body resulting reduction of SB width at the source side. Similarly, drain extension also induces the electron plasma at the drain side. This significantly increases the SB width due to increased depletion at the drain end. As a result, the ambipolar leakage current can be suppressed. In addition, drain extension also reduces the parasitic capacitances of the proposed device to improve the RF performance. The optimization of length and work function of metal used in the drain extension is performed to achieve improvement in device performance. Moreover, the proposed device makes fabrication simpler, requires low thermal budget and free from random dopant fluctuations.

  3. Observation of the inhomogeneous spatial distribution of MeV ions accelerated by the hydrodynamic ambipolar expansion of clusters

    International Nuclear Information System (INIS)

    Kanasaki, Masato; Jinno, Satoshi; Sakaki, Hironao; Faenov, Anatoly Ya.; Pikuz, Tatiana A.; Nishiuchi, Mamiko; Kiriyama, Hiromitsu; Kando, Masaki; Sugiyama, Akira; Kondo, Kiminori; Matsui, Ryutaro; Kishimoto, Yasuaki; Morishima, Kunihiro; Watanabe, Yukinobu; Scullion, Clare; Smyth, Ashley G.; Alejo, Aaron; Doria, Domenico; Kar, Satyabrata; Borghesi, Marco

    2015-01-01

    An inhomogeneous spatial distribution of laser accelerated carbon/oxygen ions produced via the hydrodynamic ambipolar expansion of CO_2 clusters has been measured by using CR-39 detectors. An inhomogeneous etch pits spatial distribution has appeared on the etched CR-39 detector installed on the laser propagation direction, while homogeneous ones are appeared on those installed at 45° and 90° from the laser propagation direction. From the range of ions in CR-39 obtained by using the multi-step etching technique, the averaged energies of carbon/oxygen ions for all directions are determined as 0.78 ± 0.09 MeV/n. The number of ions in the laser propagation direction is about 1.5 times larger than those in other directions. The inhomogeneous etch pits spatial distribution in the laser propagation direction could originate from an ion beam collimation and modulation by the effect of electromagnetic structures created in the laser plasma. - Highlights: • A spatial distribution of ions due to hydrodynamic ambipolar expansion is measured. • The homogeneous ion energy distribution of 0.78 ± 0.09 MeV/n is measured by CR-39. • The number of ions in the laser axis is about 1.5 times larger than other directions.

  4. Carbon nanotube biosensors

    Science.gov (United States)

    Tîlmaciu, Carmen-Mihaela; Morris, May C.

    2015-01-01

    Nanomaterials possess unique features which make them particularly attractive for biosensing applications. In particular, carbon nanotubes (CNTs) can serve as scaffolds for immobilization of biomolecules at their surface, and combine several exceptional physical, chemical, electrical, and optical characteristics properties which make them one of the best suited materials for the transduction of signals associated with the recognition of analytes, metabolites, or disease biomarkers. Here we provide a comprehensive review on these carbon nanostructures, in which we describe their structural and physical properties, functionalization and cellular uptake, biocompatibility, and toxicity issues. We further review historical developments in the field of biosensors, and describe the different types of biosensors which have been developed over time, with specific focus on CNT-conjugates engineered for biosensing applications, and in particular detection of cancer biomarkers. PMID:26579509

  5. Functionalization of Carbon Nanotubes

    Science.gov (United States)

    Khare, Bishun N. (Inventor); Meyyappan, Meyya (Inventor)

    2009-01-01

    Method and system for functionalizing a collection of carbon nanotubes (CNTs). A selected precursor gas (e.g., H2 or F2 or CnHm) is irradiated to provide a cold plasma of selected target species particles, such as atomic H or F, in a first chamber. The target species particles are d irected toward an array of CNTs located in a second chamber while suppressing transport of ultraviolet radiation to the second chamber. A CNT array is functionalized with the target species particles, at or below room temperature, to a point of saturation, in an exposure time interval no longer than about 30 sec. *Discrimination against non-target species is provided by (i) use of a target species having a lifetime that is much greater than a lifetime of a non-target species and/or (2) use of an applied magnetic field to discriminate between charged particle trajectories for target species and for non-target species.

  6. Carbon Nanotube Electron Gun

    Science.gov (United States)

    Nguyen, Cattien V. (Inventor); Ribaya, Bryan P. (Inventor)

    2013-01-01

    An electron gun, an electron source for an electron gun, an extractor for an electron gun, and a respective method for producing the electron gun, the electron source and the extractor are disclosed. Embodiments provide an electron source utilizing a carbon nanotube (CNT) bonded to a substrate for increased stability, reliability, and durability. An extractor with an aperture in a conductive material is used to extract electrons from the electron source, where the aperture may substantially align with the CNT of the electron source when the extractor and electron source are mated to form the electron gun. The electron source and extractor may have alignment features for aligning the electron source and the extractor, thereby bringing the aperture and CNT into substantial alignment when assembled. The alignment features may provide and maintain this alignment during operation to improve the field emission characteristics and overall system stability of the electron gun.

  7. Carbon Nanotube Biosensors

    Directory of Open Access Journals (Sweden)

    Carmen-Mihaela eTilmaciu

    2015-10-01

    Full Text Available Nanomaterials possess unique features which make them particularly attractive for biosensing applications. In particular Carbon Nanotubes (CNTs can serve as scaffolds for immobilization of biomolecules at their surface, and combine several exceptional physical, chemical, electrical and optical characteristics properties which make them one of the best suited materials for the transduction of signals associated with the recognition of analytes, metabolites or disease biomarkers. Here we provide a comprehensive review on these carbon nanostructures, in which we will describe their structural and physical properties, discuss functionalization and cellular uptake, biocompatibility and toxicity issues. We further review historical developments in the field of biosensors, and describe the different types of biosensors which have been developed over time, with specific focus on CNT-conjugates engineered for biosensing applications, and in particular detection of cancer biomarkers.

  8. Carbon Nanotube Based Electric Propulsion Thruster with Low Power Consumption, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR project is to develop field emission electric propulsion (FEEP) thruster using carbon nanotubes (CNT) integrated anode. FEEP thrusters have gained...

  9. Desktop Systems for Manufacturing Carbon Nanotube Films by Chemical Vapor Deposition

    National Research Council Canada - National Science Library

    Kuhn, David S

    2007-01-01

    Carbon nanotubes (CNTs) exhibit exceptional electrical, thermal, and mechanical properties that could potentially transform such diverse fields as composites, electronics, cooling, energy storage, and biological sensing...

  10. Synthesis and characterization of CoFe{sub 2}O{sub 4} magnetic nanotubes, nanorods and nanowires. Formation of magnetic structured elastomers by magnetic field-induced alignment of CoFe{sub 2}O{sub 4} nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Antonel, P. Soledad [Universidad de Buenos Aires, Departamento de Química Inorgánica, Analítica y Química Física, Facultad de Ciencias Exactas y Naturales, Instituto de Química Física de Materiales, Ambiente y Energía (INQUIMAE) (Argentina); Oliveira, Cristiano L. P. [Universidade de São Paulo, Grupo de Fluidos Complexos, Instituto de Física (Brazil); Jorge, Guillermo A. [Universidad Nacional de General Sarmiento, Instituto de Ciencias (Argentina); Perez, Oscar E. [Universidad de Buenos Aires, Departamento de Industrias, Facultad de Ciencias Exactas y Naturales (Argentina); Leyva, A. Gabriela, E-mail: leyva@tandar.cnea.gov.ar [Universidad Nacional de San Martín, Grupo de Materia Condensada, Centro Atómico Constituyentes, Comisión Nacional de Energía Atómica (Argentina); Escuela de Ciencia y Tecnología (Argentina); Negri, R. Martín, E-mail: rmn@qi.fcen.uba.ar [Universidad de Buenos Aires, Departamento de Química Inorgánica, Analítica y Química Física, Facultad de Ciencias Exactas y Naturales, Instituto de Química Física de Materiales, Ambiente y Energía (INQUIMAE) (Argentina)

    2015-07-15

    Magnetic CoFe{sub 2}O{sub 4} nanotubes, nanorods and nanowires were synthesized by the template method. The materials are highly crystalline and formed by compactly packed ceramic particles whose equivalent size diameter depends on the nanostructure type. Nanotubes and nanorods present the remarkable characteristic of having very large coercive fields (1000–1100 Oe) in comparison with nanoparticles of the same crystallite size (400 Oe) while keeping similar saturation magnetization (53–55 emu/g). Nanorods were used as filler material in polydimethylsiloxane elastomer composites, which were structured by curing in the presence of uniform magnetic field, H{sub curing}. In that way the nanorods agglomerate in the cured elastomer, forming needles-like structures (pseudo-chains) oriented in the direction of H{sub curing}. SEM analysis show that pseudo-chains are formed by bunches of nanorods oriented in that direction. At the considered filler concentration (1 % w/w), the structured elastomers conserve the magnetic properties of the fillers, that is, high coercive fields without observing magnetic anisotropy. The elastomer composites present strong elastic anisotropy, with compression constants about ten times larger in the direction parallel to the pseudo-chains than in the perpendicular direction, as determined by compression stress–strain curves. That anisotropic factor is about three-four times higher than that observed when using spherical CoFe{sub 2}O{sub 4} nanoparticles or elongated Ni nanochains. Hence, the use of morphological anisotropic structures (nanorods) results in composites with enhanced elastic anisotropy. It is also remarkable that the large elastic anisotropy was obtained at lower filler concentration compared with the above-mentioned systems (1 % w/w vs. 5–10 % w/w)

  11. Synthesis and characterization of CoFe2O4 magnetic nanotubes, nanorods and nanowires. Formation of magnetic structured elastomers by magnetic field-induced alignment of CoFe2O4 nanorods

    International Nuclear Information System (INIS)

    Antonel, P. Soledad; Oliveira, Cristiano L. P.; Jorge, Guillermo A.; Perez, Oscar E.; Leyva, A. Gabriela; Negri, R. Martín

    2015-01-01

    Magnetic CoFe 2 O 4 nanotubes, nanorods and nanowires were synthesized by the template method. The materials are highly crystalline and formed by compactly packed ceramic particles whose equivalent size diameter depends on the nanostructure type. Nanotubes and nanorods present the remarkable characteristic of having very large coercive fields (1000–1100 Oe) in comparison with nanoparticles of the same crystallite size (400 Oe) while keeping similar saturation magnetization (53–55 emu/g). Nanorods were used as filler material in polydimethylsiloxane elastomer composites, which were structured by curing in the presence of uniform magnetic field, H curing . In that way the nanorods agglomerate in the cured elastomer, forming needles-like structures (pseudo-chains) oriented in the direction of H curing . SEM analysis show that pseudo-chains are formed by bunches of nanorods oriented in that direction. At the considered filler concentration (1 % w/w), the structured elastomers conserve the magnetic properties of the fillers, that is, high coercive fields without observing magnetic anisotropy. The elastomer composites present strong elastic anisotropy, with compression constants about ten times larger in the direction parallel to the pseudo-chains than in the perpendicular direction, as determined by compression stress–strain curves. That anisotropic factor is about three-four times higher than that observed when using spherical CoFe 2 O 4 nanoparticles or elongated Ni nanochains. Hence, the use of morphological anisotropic structures (nanorods) results in composites with enhanced elastic anisotropy. It is also remarkable that the large elastic anisotropy was obtained at lower filler concentration compared with the above-mentioned systems (1 % w/w vs. 5–10 % w/w)

  12. Purification of carbon nanotubes via selective heating

    Science.gov (United States)

    Rogers, John A.; Wilson, William L.; Jin, Sung Hun; Dunham, Simon N.; Xie, Xu; Islam, Ahmad; Du, Frank; Huang, Yonggang; Song, Jizhou

    2017-11-21

    The present invention provides methods for purifying a layer of carbon nanotubes comprising providing a precursor layer of substantially aligned carbon nanotubes supported by a substrate, wherein the precursor layer comprises a mixture of first carbon nanotubes and second carbon nanotubes; selectively heating the first carbon nanotubes; and separating the first carbon nanotubes from the second carbon nanotubes, thereby generating a purified layer of carbon nanotubes. Devices benefiting from enhanced electrical properties enabled by the purified layer of carbon nanotubes are also described.

  13. Electronics with carbon nanotubes

    International Nuclear Information System (INIS)

    Avouris, P.

    2007-01-01

    From mobile phones and laptops to Xboxes and iPods, it is difficult to think of any aspect of modern life that has not been touched by developments in electronics, computing and communications over the last few decades. Many of these technological advances have arisen from our ability to create ever smaller electronic devices, in particular silicon-based field effect transistors (FETs), which has led to denser, faster and less power-hungry circuits. The problem is that this device miniaturization, or 'scaling', cannot continue forever. Fundamental scientific and technological limitations exist that will make it impossible to build better performing silicon devices below a certain size. This potential show-stopper has inspired a worldwide effort to develop alternative device technologies based on 1D materials or those that exploit the spin, as well as the charge, of electrons. One promising and, in principle, simpler approach is to maintain the operating concept of today's silicon-based FETs but to replace a key component of the device - the semiconducting silicon channel - with 1D nanostructures that have much more versatile electrical-transport properties. Among the different 1D materials that have been developed, those with the most desirable properties are 'single-walled' carbon nanotubes, which were first created in 1993 by Sumio Ijima at the NEC Fundamental Research Laboratory in Tsukuba, Japan, and by Donald Bethune of IBM's Almaden Research Center in California. These materials are hollow tubes made from rolled up sheets of carbon just one atom thick, otherwise known as graphene. In the March issue of Physics World, Phaedon Avouris discusses some of the many properties and applications of carbon nanotubes, which he describes as an 'engineer's dream' because of their exceptionally high strength and heat conduction. (U.K.)

  14. Tuning charge balance in PHOLEDs with ambipolar host materials to achieve high efficiency

    International Nuclear Information System (INIS)

    Padmaperuma, Asanga B.; Koech, Phillip K.; Cosimbescu, Lelia; Polikarpov, Evgueni; Swensen, James S.; Chopra, Neetu; So, Franky; Sapochak, Linda S.; Gaspar, Daniel J.

    2009-01-01

    operating voltages, particularly if this is to be achieved in a device that can be manufactured at low cost. To avoid the efficiency losses associated with phosphorescence quenching by back-energy transfer from the dopant onto the host, the triplet excited states of the host material must be higher in energy than the triplet excited state of the dopant.5 This must be accomplished without sacrificing the charge transporting properties of the composite.6 Similar problems limit the efficiency of OLED-based displays, where blue light emitters are the least efficient and least stable. We previously demonstrated the utility of organic phosphine oxide (PO) materials as electron transporting HMs for FIrpic in blue OLEDs.7 However, the high reluctance of PO materials to oxidation and thus, hole injection limits the ability to balance charge injection and transport in the EML without relying on charge transport by the phosphorescent dopant. PO host materials were engineered to transport both electrons and holes in the EML and still maintain high triplet exciton energy to ensure efficient energy transfer to the dopant (Figure 1). There are examples of combining hole transporting moieties (mainly aromatic amines) with electron transport moieties (e.g., oxadiazoles, triazines, boranes)8 to develop new emitter and host materials for small molecule and polymer9 OLEDs. The challenge is to combine the two moieties without lowering the triplet energy of the target molecule. For example, coupling of a dimesitylphenylboryl moiety with a tertiary aromatic amine (FIAMBOT) results in intramolecular electron transfer from the amine to the boron atom through the bridging phenyl. The mesomeric effect of the dimesitylphenylboryl unit acts to extend conjugation and lowers triplet exciton energies (< 2.8 eV) rendering such systems inadequate as ambipolar hosts for blue phosphors.

  15. Local gate control in carbon nanotube quantum devices

    Science.gov (United States)

    Biercuk, Michael Jordan

    This thesis presents transport measurements of carbon nanotube electronic devices operated in the quantum regime. Nanotubes are contacted by source and drain electrodes, and multiple lithographically-patterned electrostatic gates are aligned to each device. Transport measurements of device conductance or current as a function of local gate voltages reveal that local gates couple primarily to the proximal section of the nanotube, hence providing spatially localized control over carrier density along the nanotube length. Further, using several different techniques we are able to produce local depletion regions along the length of a tube. This phenomenon is explored in detail for different contact metals to the nanotube. We utilize local gating techniques to study multiple quantum dots in carbon nanotubes produced both by naturally occurring defects, and by the controlled application of voltages to depletion gates. We study double quantum dots in detail, where transport measurements reveal honeycomb charge stability diagrams. We extract values of energy-level spacings, capacitances, and interaction energies for this system, and demonstrate independent control over all relevant tunneling rates. We report rf-reflectometry measurements of gate-defined carbon nanotube quantum dots with integrated charge sensors. Aluminum rf-SETs are electrostatically coupled to carbon nanotube devices and detect single electron charging phenomena in the Coulomb blockade regime. Simultaneous correlated measurements of single electron charging are made using reflected rf power from the nanotube itself and from the rf-SET on microsecond time scales. We map charge stability diagrams for the nanotube quantum dot via charge sensing, observing Coulomb charging diamonds beyond the first order. Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately 1e2/h, the quantum of conductance for a single

  16. Methods Reduce Cost, Enhance Quality of Nanotubes

    Science.gov (United States)

    2009-01-01

    efforts with carbon nanotubes have made it a global leader in this field. Among the many examples are Johnson Space Center s Carbon Nanotube Project, which focuses on bulk nanotube production, purification, and application, and Goddard Space Flight Center s improved arc discharge method of nanotube production, developed under the direction of Jeannette Benavides (featured in Spinoff 2007 and 2008). While the Agency continues its own research, it partners with private companies to advance this unique technology for use on Earth as well as among the stars.

  17. Oxidation of Carbon Nanotubes in an Ionizing Environment.

    Science.gov (United States)

    Koh, Ai Leen; Gidcumb, Emily; Zhou, Otto; Sinclair, Robert

    2016-02-10

    In this work, we present systematic studies on how an illuminating electron beam which ionizes molecular gas species can influence the mechanism of carbon nanotube oxidation in an environmental transmission electron microscope (ETEM). We found that preferential attack of the nanotube tips is much more prevalent than for oxidation in a molecular gas environment. We establish the cumulative electron doses required to damage carbon nanotubes from 80 keV electron beam irradiation in gas versus in high vacuum. Our results provide guidelines for the electron doses required to study carbon nanotubes within or without a gas environment, to determine or ameliorate the influence of the imaging electron beam. This work has important implications for in situ studies as well as for the oxidation of carbon nanotubes in an ionizing environment such as that occurring during field emission.

  18. Recent development of carbon nanotube

    Energy Technology Data Exchange (ETDEWEB)

    Yamabe, Tokio [Div. of Molecular Engineering, Kyoto Univ. (Japan); [Inst. for Fundamental Chemistry, Kyoto (Japan)

    1995-03-15

    Recent developments of carbon nanotubes are reviewed. Analytical solutions for the electronic structure of carbon nanotube on the basis of thight-binding approximation are presented and interpreted using the concepts of crystal orbital. The electronic properties of actual carbon nanotubes are presented. The electronic structures of carbon nanotubes in the presence of magnetic fiels are also summerized. (orig.)

  19. ''The ambipolar diffusion time scale and the location of star formation in magnetic interstellar clouds'': Setting the record straight

    International Nuclear Information System (INIS)

    Mouschovias, T.C.

    1984-01-01

    The point of a recent (1983) paper by Scott is that a previous paper (1979) by Mouschovias has concluded ''erroneously'' that star formation takes place off center in a cloud because of the use of an ''improver'' definition of a time scale for ambipolar diffusion. No such conclusion, Scott claims, follows from a ''proper'' definition, such as the ''traditional'' one by Spitzer. (i) Scott misrepresents the reasoning that led to the conclusion in the paper which he criticized. (ii) He is also wrong: both the ''traditional'' and the ''improper'' definitions vary similarly with radius, and both can have an off-center minimum; the spatial variation of the degree of ionization is the determining factor: not the specific value of the time scale at the origin, as Scott claims

  20. Conjugate acene fused buckybowls: evaluating their suitability for p-type, ambipolar and n-type air stable organic semiconductors.

    Science.gov (United States)

    Purushotham, Uppula; Sastry, G Narahari

    2013-04-14

    Elaborate and exhaustive first principles calculations were carried out to screen the novel properties of a series of acene fused buckybowls. The acene fused compounds exhibit hole transport property due to their higher electron injection and lower hole transport barrier relative to the work function potential of Au electrodes. The higher HOMO and lower LUMO energy levels suggest lower hole and electron injection barriers of F and CN substituted and boron doped bowls which indicates ambipolar property of these bowls. The dicyano substituted pentacene fused bowls show only electron transport property with lower LUMO (-4.26 eV to -4.27 eV) and higher HOMO (-5.56 eV to -5.90 eV) energy levels. High electron affinity (>2.80 eV) and low LUMO energy (semiconductors.

  1. Carbon nanotube and graphene device modeling and simulation

    Science.gov (United States)

    Yoon, Young Ki

    The performance of the semiconductors has been improved and the price has gone down for decades. It has been continuously scaled down in size year by year, and now it encounters the fundamental scaling limit. We, therefore, should prepare a new era beyond the conventional semiconductor technologies. One of the most promising devices is possible by carbon nanotube (CNT) or graphene nanoribbon (GNR) in terms of its excellent charge transport properties. Their fundamental material properties and device physics are totally different to those of the conventional devices. In this nano-regime, more sophisticated device modeling and simulation are really needed to elucidate nano-device operation and to save our resources from errors. The numerical simulation works in this dissertation will provide novel view points on the emerging devices. In this dissertation, CNT and GNR devices are numerically studied. The first part of this work is on CNT devices, and a common structure of CNT device has CNT channel, metal source and drain contacts, and gate electrode. We investigate the strain, geometry, and scattering effects on the device performance of CNT field-effect transistors (FETs). It is shown that even a small amount of strain can result in a large effect on the performance of CNTFETs due to the variation of the bandgap and band-structure-limited velocity. A type of strain which produces a larger bandgap results in increased Schottky barrier (SB) height and decreased band-structure-limited velocity, and hence a smaller minimum leakage current, smaller on current, larger maximum achievable Ion/Ioff, and larger intrinsic delay. We also examine geometry effect of partial gate CNTFETs. In the growth process of vertical CNT, underlap between the gate and the bottom electrode is advantageous for transistor operation because it suppresses ambipolar conduction of SBFETs. Both n-type and p-type transistor operations with balanced performance metrics can be achieved on a single

  2. Tunable Bandgap and Optical Properties of Black Phosphorene Nanotubes

    Directory of Open Access Journals (Sweden)

    Chunmei Li

    2018-02-01

    Full Text Available Black phosphorus (BP, a new two-dimensional material, has been the focus of scientists’ attention. BP nanotubes have potential in the field of optoelectronics due to their low-dimensional effects. In this work, the bending strain energy, electronic structure, and optical properties of BP nanotubes were investigated by using the first-principles method based on density functional theory. The results show that these properties are closely related to the rolling direction and radius of the BP nanotube. All the calculated BP nanotube properties show direct bandgaps, and the BP nanotubes with the same rolling direction express a monotone increasing trend in the value of bandgap with a decrease in radius, which is a stacking effect of the compression strain on the inner atoms and the tension strain on the outer atoms. The bending strain energy of the zigzag phosphorene nanotubes (zPNTs is higher than that of armchair phosphorene nanotubes (aPNT with the same radius of curvature due to the anisotropy of the BP’s structure. The imaginary part of the dielectric function, the absorption range, reflectivity, and the imaginary part of the refractive index of aPNTs have a wider range than those of zPNTs, with higher values overall. As a result, tunable BP nanotubes are suitable for optoelectronic devices, such as lasers and diodes, which function in the infrared and ultra-violet regions, and for solar cells and photocatalysis.

  3. Topological phase diagram of superconducting carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Milz, Lars; Marganska-Lyzniak, Magdalena; Grifoni, Milena [Institut I - Theoretische Physik Universitaet Regensburg (Germany)

    2016-07-01

    The topological superconducting phase diagram of superconducting carbon nanotubes is discussed. Under the assumption of a short-ranged pairing potential, there are two spin-singlet states: an s-wave and an exotic p + ip-wave that are possible because of the special structure of the honeycomb lattice. The consequences for the possible presence of Majorana edge states in carbon nanotubes are addressed. In particular, regions in the magnetic field-chemical potential plane possibly hosting localized Majorana modes are discussed.

  4. Study of TiO{sub 2} nanotubes as an implant application

    Energy Technology Data Exchange (ETDEWEB)

    Hazan, Roshasnorlyza, E-mail: roshasnorlyza@nm.gov.my; Sreekantan, Srimala [School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, 14300, Nibong Tebal, Pulau Pinang (Malaysia); Mydin, Rabiatul Basria S. M. N.; Mat, Ishak [Advanced Medical and Dental Institute, Universiti Sains Malaysia, 13200, Kepala Batas, Pulau Pinang (Malaysia); Abdullah, Yusof [Materials Technology Group, Industrial Technology Division, Nuclear Malaysia Agency, Bangi, 43000, Kajang, Selangor. Malaysia (Malaysia)

    2016-01-22

    Vertically aligned TiO{sub 2} nanotubes have become the primary candidates for implant materials that can provide direct control of cell behaviors. In this work, 65 nm inner diameters of TiO{sub 2} nanotubes were successfully prepared by anodization method. The interaction of bone marrow stromal cells (BMSC) in term of cell adhesion and cell morphology on bare titanium and TiO{sub 2} nanotubes is reported. Field emission scanning electron microscopy (FESEM) analysis proved interaction of BMSC on TiO{sub 2} nanotubes structure was better than flat titanium (Ti) surface. Also, significant cell adhesion on TiO{sub 2} nanotubes surface during in vitro study revealed that BMSC prone to attach on TiO{sub 2} nanotubes. From the result, it can be conclude that TiO{sub 2} nanotubes are biocompatible to biological environment and become a new generation for advanced implant materials.

  5. Study of TiO2 nanotubes as an implant application

    International Nuclear Information System (INIS)

    Hazan, Roshasnorlyza; Sreekantan, Srimala; Mydin, Rabiatul Basria S. M. N.; Mat, Ishak; Abdullah, Yusof

    2016-01-01

    Vertically aligned TiO 2 nanotubes have become the primary candidates for implant materials that can provide direct control of cell behaviors. In this work, 65 nm inner diameters of TiO 2 nanotubes were successfully prepared by anodization method. The interaction of bone marrow stromal cells (BMSC) in term of cell adhesion and cell morphology on bare titanium and TiO 2 nanotubes is reported. Field emission scanning electron microscopy (FESEM) analysis proved interaction of BMSC on TiO 2 nanotubes structure was better than flat titanium (Ti) surface. Also, significant cell adhesion on TiO 2 nanotubes surface during in vitro study revealed that BMSC prone to attach on TiO 2 nanotubes. From the result, it can be conclude that TiO 2 nanotubes are biocompatible to biological environment and become a new generation for advanced implant materials

  6. Chemical reactions confined within carbon nanotubes.

    Science.gov (United States)

    Miners, Scott A; Rance, Graham A; Khlobystov, Andrei N

    2016-08-22

    In this critical review, we survey the wide range of chemical reactions that have been confined within carbon nanotubes, particularly emphasising how the pairwise interactions between the catalysts, reactants, transition states and products of a particular molecular transformation with the host nanotube can be used to control the yields and distributions of products of chemical reactions. We demonstrate that nanoscale confinement within carbon nanotubes enables the control of catalyst activity, morphology and stability, influences the local concentration of reactants and products thus affecting equilibria, rates and selectivity, pre-arranges the reactants for desired reactions and alters the relative stability of isomeric products. We critically evaluate the relative advantages and disadvantages of the confinement of chemical reactions inside carbon nanotubes from a chemical perspective and describe how further developments in the controlled synthesis of carbon nanotubes and the incorporation of multifunctionality are essential for the development of this ever-expanding field, ultimately leading to the effective control of the pathways of chemical reactions through the rational design of multi-functional carbon nanoreactors.

  7. Carbon nanotube and graphene nanoribbon interconnects

    CERN Document Server

    Das, Debaprasad

    2014-01-01

    "The book, Caron Nanotube and Graphene Nanoribbon Interconnects, authored by Drs. Debapraad Das and Hafizur Rahaman serves as a good source of material on CNT and GNR interconnects for readers who wish to get into this area and also for practicing engineers who would like to be updated in advances of this field."-Prof. Ashok Srivastava, Louisiana State University, Baton Rouge, USA"Mathematical analysis included in each and every chapter is the main strength of the materials. ... The book is very precise and useful for those who are working in this area. ... highly focused, very compact, and easy to apply. ... This book depicts a detailed analysis and modelling of carbon nanotube and graphene nanoribbon interconnects. The book also covers the electrical circuit modelling of carbon nanotubes and graphene nanoribbons."-Prof. Chandan Kumar Sarkar, Jadavpur University, Kolkata, India.

  8. Modifying the electronic and optical properties of carbon nanotubes

    Science.gov (United States)

    Kinder, Jesse M.

    The intrinsic electronic and optical properties of carbon nanotubes make them promising candidates for circuit elements and LEDs in nanoscale devices. However, applied fields and interactions with the environment can modify these intrinsic properties. This dissertation is a theoretical study of perturbations to an ideal carbon nanotube. It illustrates how transport and optical properties of carbon nanotubes can be adversely affected or intentionally modified by the local environment. The dissertation is divided into three parts. Part I analyzes the effect of a transverse electric field on the single-electron energy spectrum of semiconducting carbon nanotubes. Part II analyzes the effect of the local environment on selection rules and decay pathways relevant to dark excitons. Part III is a series of 26 appendices. Two different models for a transverse electric field are introduced in Part I. The first is a uniform field perpendicular to the nanotube axis. This model suggests the field has little effect on the band gap until it exceeds a critical value that can be tuned with strain or a magnetic field. The second model is a transverse field localized to a small region along the nanotube axis. The field creates a pair of exponentially localized bound states but has no effect on the band gap for particle transport. Part II explores the physics of dark excitons in carbon nanotubes. Two model calculations illustrate the effect of the local environment on allowed optical transitions and nonradiative recombination pathways. The first model illustrates the role of inversion symmetry in the optical spectrum. Broken inversion symmetry may explain low-lying peaks in the exciton spectrum of boron nitride nanotubes and localized photoemission around impurities and interfaces in carbon nanotubes. The second model in Part II suggests that free charge carriers can mediate an efficient nonradiative decay process for dark excitons in carbon nanotubes. The appendices in Part III

  9. Single walled carbon nanotubes with functionally adsorbed biopolymers for use as chemical sensors

    Science.gov (United States)

    Johnson, Jr., Alan T

    2013-12-17

    Chemical field effect sensors comprising nanotube field effect devices having biopolymers such as single stranded DNA or RNA functionally adsorbed to the nanotubes are provided. Also included are arrays comprising the sensors and methods of using the devices to detect volatile compounds.

  10. Carbon Nanotubes Hybrid Hydrogels in Drug Delivery: A Perspective Review

    Science.gov (United States)

    Hampel, Silke; Spizzirri, Umile Gianfranco; Parisi, Ortensia Ilaria; Picci, Nevio; Iemma, Francesca

    2014-01-01

    The use of biologics, polymers, silicon materials, carbon materials, and metals has been proposed for the preparation of innovative drug delivery devices. One of the most promising materials in this field are the carbon-nanotubes composites and hybrid materials coupling the advantages of polymers (biocompatibility and biodegradability) with those of carbon nanotubes (cellular uptake, stability, electromagnatic, and magnetic behavior). The applicability of polymer-carbon nanotubes composites in drug delivery, with particular attention to the controlled release by composites hydrogel, is being extensively investigated in the present review. PMID:24587993

  11. Inorganic Fullerene-Like Nanoparticles and Inorganic Nanotubes

    Directory of Open Access Journals (Sweden)

    Reshef Tenne

    2014-11-01

    Full Text Available Fullerene-like nanoparticles (inorganic fullerenes; IF and nanotubes of inorganic layered compounds (inorganic nanotubes; INT combine low dimensionality and nanosize, enhancing the performance of corresponding bulk counterparts in their already known applications, as well as opening new fields of their own [1]. This issue gathers articles from the diverse area of materials science and is devoted to fullerene-like nanoparticles and nanotubes of layered sulfides and boron nitride and collects the most current results obtained at the interface between fundamental research and engineering.[...

  12. Faceted MoS2 nanotubes and nanoflowers

    International Nuclear Information System (INIS)

    Deepak, Francis Leonard; Mayoral, Alvaro; Yacaman, Miguel Jose

    2009-01-01

    A simple synthesis of novel faceted MoS 2 nanotubes (NTs) and nanoflowers (NFs) starting from molybdenum oxide and thiourea as the sulphur source is reported. The MoS 2 nanotubes with the faceted morphology have not been observed before. Further the as-synthesized MoS 2 nanotubes have high internal surface area. The nanostructures have been characterized by a variety of electron microscopy techniques. It is expected that these MoS 2 nanostrutures will find important applications in energy storage, catalysis and field emission.

  13. Nanotube resonator devices

    Science.gov (United States)

    Jensen, Kenneth J; Zettl, Alexander K; Weldon, Jeffrey A

    2014-05-06

    A fully-functional radio receiver fabricated from a single nanotube is being disclosed. Simultaneously, a single nanotube can perform the functions of all major components of a radio: antenna, tunable band-pass filter, amplifier, and demodulator. A DC voltage source, as supplied by a battery, can power the radio. Using carrier waves in the commercially relevant 40-400 MHz range and both frequency and amplitude modulation techniques, successful music and voice reception has been demonstrated. Also disclosed are a radio transmitter and a mass sensor using a nanotube resonator device.

  14. Effect of asymmetrical double-pockets and gate-drain underlap on Schottky barrier tunneling FET: Ambipolar conduction vs. high frequency performance

    Science.gov (United States)

    Shaker, Ahmed; Ossaimee, Mahmoud; Zekry, A.

    2016-08-01

    In this paper, a proposed structure based on asymmetrical double pockets SB-TFET with gate-drain underlap is presented. 2D extensive modeling and simulation, using Silvaco TCAD, were carried out to study the effect of both underlap length and pockets' doping on the transistor performance. It was found that the underlap from the drain side suppresses the ambipolar conduction and doesn't enhance the high-frequency characteristics. The enhancement of the high-frequency characteristics could be realized by increasing the doping of the drain pocket over the doping of the source pocket. An optimum choice was found which gives the conditions of minimum ambipolar conduction, maximum ON current and maximum cut-off frequency. These enhancements render the device more competitive as a nanometer transistor.

  15. Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio.

    Science.gov (United States)

    Oh, Gwangtaek; Kim, Jin-Soo; Jeon, Ji Hoon; Won, EunA; Son, Jong Wan; Lee, Duk Hyun; Kim, Cheol Kyeom; Jang, Jingon; Lee, Takhee; Park, Bae Ho

    2015-07-28

    High-quality channel layer is required for next-generation flexible electronic devices. Graphene is a good candidate due to its high carrier mobility and unique ambipolar transport characteristics but typically shows a low on/off ratio caused by gapless band structure. Popularly investigated organic semiconductors, such as pentacene, suffer from poor carrier mobility. Here, we propose a graphene/pentacene channel layer with high-k ion-gel gate dielectric. The graphene/pentacene device shows both high on/off ratio and carrier mobility as well as excellent mechanical flexibility. Most importantly, it reveals ambipolar behaviors and related negative differential resistance, which are controlled by external bias. Therefore, our graphene/pentacene barristor with ion-gel gate dielectric can offer various flexible device applications with high performances.

  16. High-sensitivity pH sensor using separative extended-gate field-effect transistors with single-walled carbon-nanotube networks

    Science.gov (United States)

    Pyo, Ju-Young; Cho, Won-Ju

    2018-04-01

    We fabricate high-sensitivity pH sensors using single-walled carbon-nanotube (SWCNT) network thin-film transistors (TFTs). The sensing and transducer parts of the pH sensor are composed of separative extended-sensing gates (ESGs) with SnO2 ion-sensitive membranes and double-gate structure TFTs with thin SWCNT network channels of ∼1 nm and AlO x top-gate insulators formed by the solution-deposition method. To prevent thermal process-induced damages on the SWCNT channel layer due to the post-deposition annealing process and improve the electrical characteristics of the SWCNT-TFTs, microwave irradiation is applied at low temperatures. As a result, a pH sensitivity of 7.6 V/pH, far beyond the Nernst limit, is obtained owing to the capacitive coupling effect between the top- and bottom-gate insulators of the SWCNT-TFTs. Therefore, double-gate structure SWCNT-TFTs with separated ESGs are expected to be highly beneficial for high-sensitivity disposable biosensor applications.

  17. Carbon nanotube based pressure sensor for flexible electronics

    International Nuclear Information System (INIS)

    So, Hye-Mi; Sim, Jin Woo; Kwon, Jinhyeong; Yun, Jongju; Baik, Seunghyun; Chang, Won Seok

    2013-01-01

    Highlights: • The electromechanical change of vertically aligned carbon nanotubes. • Fabrication of CNT field-effect transistor on flexible substrate. • CNT based FET integrated active pressure sensor. • The integrated device yields an increase in the source-drain current under pressure. - Abstract: A pressure sensor was developed based on an arrangement of vertically aligned carbon nanotubes (VACNTs) supported by a polydimethylsiloxane (PDMS) matrix. The VACNTs embedded in the PDMS matrix were structurally flexible and provided repeated sensing operation due to the high elasticities of both the polymer and the carbon nanotubes (CNTs). The conductance increased in the presence of a loading pressure, which compressed the material and induced contact between neighboring CNTs, thereby producing a dense current path and better CNT/metal contacts. To achieve flexible functional electronics, VACNTs based pressure sensor was integrated with field-effect transistor, which is fabricated using sprayed semiconducting carbon nanotubes on plastic substrate

  18. Carbon nanotube based pressure sensor for flexible electronics

    Energy Technology Data Exchange (ETDEWEB)

    So, Hye-Mi [Department of Nano Mechanics, Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Daejeon 305-343 (Korea, Republic of); Sim, Jin Woo [Advanced Nano Technology Ltd., Seoul 132-710 (Korea, Republic of); Kwon, Jinhyeong [Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of); Yun, Jongju; Baik, Seunghyun [SKKU Advanced Institute of Nanotechnology (SAINT), Department of Energy Science and School of Mechanical Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Chang, Won Seok, E-mail: paul@kimm.re.kr [Department of Nano Mechanics, Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Daejeon 305-343 (Korea, Republic of)

    2013-12-15

    Highlights: • The electromechanical change of vertically aligned carbon nanotubes. • Fabrication of CNT field-effect transistor on flexible substrate. • CNT based FET integrated active pressure sensor. • The integrated device yields an increase in the source-drain current under pressure. - Abstract: A pressure sensor was developed based on an arrangement of vertically aligned carbon nanotubes (VACNTs) supported by a polydimethylsiloxane (PDMS) matrix. The VACNTs embedded in the PDMS matrix were structurally flexible and provided repeated sensing operation due to the high elasticities of both the polymer and the carbon nanotubes (CNTs). The conductance increased in the presence of a loading pressure, which compressed the material and induced contact between neighboring CNTs, thereby producing a dense current path and better CNT/metal contacts. To achieve flexible functional electronics, VACNTs based pressure sensor was integrated with field-effect transistor, which is fabricated using sprayed semiconducting carbon nanotubes on plastic substrate.

  19. How fast does water flow in carbon nanotubes?

    DEFF Research Database (Denmark)

    Kannam, Sridhar; Todd, Billy; Hansen, Jesper Schmidt

    2013-01-01

    The purpose of this paper is threefold. First, we review the existing literature on flow rates of water in carbon nanotubes. Data for the slip length which characterizes the flow rate are scattered over 5 orders of magnitude for nanotubes of diameter 0.81–10 nm. Second, we precisely compute...... the slip length using equilibrium molecular dynamics (EMD) simulations, from which the interfacial friction between water and carbon nanotubes can be found, and also via external field driven non-equilibrium molecular dynamics simulations (NEMD). We discuss some of the issues in simulation studies which...... and reliably extrapolate the results for the slip length to values of the field corresponding to experimentally accessible pressure gradients. Finally, we comment on several issues concerning water flow rates in carbon nanotubes which may lead to some future research directions in this area....

  20. Selective growth of carbon nanotube on silicon substrates

    Institute of Scientific and Technical Information of China (English)

    ZOU Xiao-ping; H. ABE; T. SHIMIZU; A. ANDO; H. TOKUMOT; ZHU Shen-ming; ZHOU Hao-shen

    2006-01-01

    The carbon nanotube (CNT) growth of iron oxide-deposited trench-patterns and the locally-ordered CNT arrays on silicon substrate were achieved by simple thermal chemical vapor deposition(STCVD) of ethanol vapor. The CNTs were uniformly synthesized with good selectivity on trench-patterned silicon substrates. This fabrication process is compatible with currently used semiconductor-processing technologies,and the carbon-nanotube fabrication process can be widely applied for the development of electronic devices using carbon-nanotube field emitters as cold cathodes and can revolutionize the area of field-emitting electronic devices. The site-selective growth of CNT from an iron oxide nanoparticle catalyst patterned were also achieved by drying-mediated self-assembly technique. The present method offers a simple and cost-effective method to grow carbon nanotubes with self-assembled patterns.

  1. Electroluminescence from single-wall carbon nanotube network transistors.

    Science.gov (United States)

    Adam, E; Aguirre, C M; Marty, L; St-Antoine, B C; Meunier, F; Desjardins, P; Ménard, D; Martel, R

    2008-08-01

    The electroluminescence (EL) properties from single-wall carbon nanotube network field-effect transistors (NNFETs) and small bundle carbon nanotube field effect transistors (CNFETs) are studied using spectroscopy and imaging in the near-infrared (NIR). At room temperature, NNFETs produce broad (approximately 180 meV) and structured NIR spectra, while they are narrower (approximately 80 meV) for CNFETs. EL emission from NNFETs is located in the vicinity of the minority carrier injecting contact (drain) and the spectrum of the emission is red shifted with respect to the corresponding absorption spectrum. A phenomenological model based on a Fermi-Dirac distribution of carriers in the nanotube network reproduces the spectral features observed. This work supports bipolar (electron-hole) current recombination as the main mechanism of emission and highlights the drastic influence of carrier distribution on the optoelectronic properties of carbon nanotube films.

  2. NMR strategies to study the local magnetic properties of carbon nanotubes

    KAUST Repository

    Abou-Hamad, Edy; Kim, Younghyun; Bouhrara, Mohamed; Saih, Youssef; Wå gberg, Thomas; Luzzi, David E.; Goze-Bac, Christophe

    2012-01-01

    The local magnetic properties of the one dimensional inner space of the nanotubes are investigated using 13C nuclear magnetic resonance spectroscopy of encapsulated fullerene molecules inside single walled carbon nanotubes. Isotope engineering and magnetically purified nanotubes have been advantageously used on our study to discriminate between the different diamagnetic and paramagnetic shifts of the resonances. Ring currents originating from the π electrons circulating on the nanotube, are found to actively screen the applied magnetic field by -36.9 ppm. Defects and holes in the nanotube walls cancel this screening locally. What is interesting, that at high magnetic fields, the modifications of the NMR resonances of the molecules from free to encapsulated can be exploited to determine some structural characteristics of the surrounding nanotubes, never observed experimentally. © 2011 Elsevier B.V. All rights reserved.

  3. NMR strategies to study the local magnetic properties of carbon nanotubes

    KAUST Repository

    Abou-Hamad, Edy

    2012-02-01

    The local magnetic properties of the one dimensional inner space of the nanotubes are investigated using 13C nuclear magnetic resonance spectroscopy of encapsulated fullerene molecules inside single walled carbon nanotubes. Isotope engineering and magnetically purified nanotubes have been advantageously used on our study to discriminate between the different diamagnetic and paramagnetic shifts of the resonances. Ring currents originating from the π electrons circulating on the nanotube, are found to actively screen the applied magnetic field by -36.9 ppm. Defects and holes in the nanotube walls cancel this screening locally. What is interesting, that at high magnetic fields, the modifications of the NMR resonances of the molecules from free to encapsulated can be exploited to determine some structural characteristics of the surrounding nanotubes, never observed experimentally. © 2011 Elsevier B.V. All rights reserved.

  4. Local Gate Control of a Carbon Nanotube Double Quantum Dot

    Science.gov (United States)

    2016-04-04

    describ- ing the levitation . Quantitative comparisons are made difficult by the complicated aniso- tropy of the nematic’s viscoelasticity (21). However...director fields. For example, as a straightforward extension of the levitation , a liquid crystal that twists through many periods (such as a cholesteric...Nanotube Double Quantum Dot N. Mason,*† M. J. Biercuk,* C. M. Marcus† We have measured carbon nanotube quantum dots with multiple electro- static gates and

  5. Conducting carbonized polyaniline nanotubes

    International Nuclear Information System (INIS)

    Mentus, Slavko; Ciric-Marjanovic, Gordana; Trchova, Miroslava; Stejskal, Jaroslav

    2009-01-01

    Conducting nitrogen-containing carbon nanotubes were synthesized by the carbonization of self-assembled polyaniline nanotubes protonated with sulfuric acid. Carbonization was carried out in a nitrogen atmosphere at a heating rate of 10 deg. C min -1 up to a maximum temperature of 800 deg. C. The carbonized polyaniline nanotubes which have a typical outer diameter of 100-260 nm, with an inner diameter of 20-170 nm and a length extending from 0.5 to 0.8 μm, accompanied with very thin nanotubes with outer diameters of 8-14 nm, inner diameters 3.0-4.5 nm and length extending from 0.3 to 1.0 μm, were observed by scanning and transmission electron microscopies. Elemental analysis showed 9 wt% of nitrogen in the carbonized product. Conductivity of the nanotubular PANI precursor, amounting to 0.04 S cm -1 , increased to 0.7 S cm -1 upon carbonization. Molecular structure of carbonized polyaniline nanotubes has been analyzed by FTIR and Raman spectroscopies, and their paramagnetic characteristics were compared with the starting PANI nanotubes by EPR spectroscopy.

  6. Conducting carbonized polyaniline nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Mentus, Slavko; Ciric-Marjanovic, Gordana [Faculty of Physical Chemistry, University of Belgrade, Studentski trg 12-16, 11158 Belgrade (Serbia); Trchova, Miroslava; Stejskal, Jaroslav [Institute of Macromolecular Chemistry, Academy of Sciences of the Czech Republic, Heyrovsky Square 2, 162 06 Prague 6 (Czech Republic)], E-mail: gordana@ffh.bg.ac.rs

    2009-06-17

    Conducting nitrogen-containing carbon nanotubes were synthesized by the carbonization of self-assembled polyaniline nanotubes protonated with sulfuric acid. Carbonization was carried out in a nitrogen atmosphere at a heating rate of 10 deg. C min{sup -1} up to a maximum temperature of 800 deg. C. The carbonized polyaniline nanotubes which have a typical outer diameter of 100-260 nm, with an inner diameter of 20-170 nm and a length extending from 0.5 to 0.8 {mu}m, accompanied with very thin nanotubes with outer diameters of 8-14 nm, inner diameters 3.0-4.5 nm and length extending from 0.3 to 1.0 {mu}m, were observed by scanning and transmission electron microscopies. Elemental analysis showed 9 wt% of nitrogen in the carbonized product. Conductivity of the nanotubular PANI precursor, amounting to 0.04 S cm{sup -1}, increased to 0.7 S cm{sup -1} upon carbonization. Molecular structure of carbonized polyaniline nanotubes has been analyzed by FTIR and Raman spectroscopies, and their paramagnetic characteristics were compared with the starting PANI nanotubes by EPR spectroscopy.

  7. Carbon nanotube filters

    Science.gov (United States)

    Srivastava, A.; Srivastava, O. N.; Talapatra, S.; Vajtai, R.; Ajayan, P. M.

    2004-09-01

    Over the past decade of nanotube research, a variety of organized nanotube architectures have been fabricated using chemical vapour deposition. The idea of using nanotube structures in separation technology has been proposed, but building macroscopic structures that have controlled geometric shapes, density and dimensions for specific applications still remains a challenge. Here we report the fabrication of freestanding monolithic uniform macroscopic hollow cylinders having radially aligned carbon nanotube walls, with diameters and lengths up to several centimetres. These cylindrical membranes are used as filters to demonstrate their utility in two important settings: the elimination of multiple components of heavy hydrocarbons from petroleum-a crucial step in post-distillation of crude oil-with a single-step filtering process, and the filtration of bacterial contaminants such as Escherichia coli or the nanometre-sized poliovirus (~25 nm) from water. These macro filters can be cleaned for repeated filtration through ultrasonication and autoclaving. The exceptional thermal and mechanical stability of nanotubes, and the high surface area, ease and cost-effective fabrication of the nanotube membranes may allow them to compete with ceramic- and polymer-based separation membranes used commercially.

  8. Filled carbon nanotubes in biomedical imaging and drug delivery.

    Science.gov (United States)

    Martincic, Markus; Tobias, Gerard

    2015-04-01

    Carbon nanotubes have been advocated as promising candidates in the biomedical field in the areas of diagnosis and therapy. In terms of drug delivery, the use of carbon nanotubes can overcome some limitations of 'free' drugs by improving the formulation of poorly water-soluble drugs, allowing targeted delivery and even enabling the co-delivery of two or more drugs for combination therapy. Two different approaches are currently being explored for the delivery of diagnostic and therapeutic agents by carbon nanotubes, namely attachment of the payload to the external sidewalls or encapsulation into the inner cavities. Although less explored, the latter confers additional stability to the chosen diagnostic or therapeutic agents, and leaves the backbone structure of the nanotubes available for its functionalization with dispersing and targeting moieties. Several drug delivery systems and diagnostic agents have been developed in the last years employing the inner tubular cavities of carbon nanotubes. The research discussed in this review focuses on the use of carbon nanotubes that contain in their interior drug molecules and diagnosis-related compounds. The approaches employed for the development of such nanoscale vehicles along with targeting and releasing strategies are discussed. The encapsulation of both biomedical contrast agents and drugs inside carbon nanotubes is further expanding the possibilities to allow an early diagnosis and treatment of diseases.

  9. Theoretical study on the combined systems of peanut-shaped carbon nanotubes encapsulated in single-walled carbon nanotubes

    International Nuclear Information System (INIS)

    Wang, Guo; Huang, Yuanhe

    2012-01-01

    Highlights: ► The combined systems of peanut-shaped carbon nanotubes encapsulated in single-walled carbon nanotubes are investigated. ► The band structures and related electronic properties are calculated by using crystal orbital method. ► The carrier mobility and mean free path are evaluated under the deformation potential theory. -- Abstract: The combined systems of peanut-shaped carbon nanotubes encapsulated in both semiconducting and metallic single-walled carbon nanotubes are investigated by using self-consistent field crystal orbital method based on the density functional theory. The investigation indicates that the interaction between the two constituents is mainly contributed by the π orbitals. The encapsulation does not change the semiconducting or metallic nature of the single-walled carbon nanotubes, but significantly changes the band dispersion and decreases the frontier band width of the metallic one. The carrier mobility and mean free path of the metallic single-walled carbon nanotube increase greatly after the encapsulation. The calculated mobilities have the order of 10 3 cm 2 V −1 s −1 for both of the semiconducting and metallic double-walled carbon nanotubes.

  10. A novel hetero-material gate-underlap electrically doped TFET for improving DC/RF and ambipolar behaviour

    Science.gov (United States)

    Yadav, Shivendra; Sharma, Dheeraj; Chandan, Bandi Venkata; Aslam, Mohd; Soni, Deepak; Sharma, Neeraj

    2018-05-01

    In this article, the impact of gate-underlap with hetero material (low band gap) has been investigated in terms of DC and Analog/RF parameters by proposed device named as hetero material gate-underlap electrically doped TFET (HM-GUL-ED-TFET). Gate-underlap resolves the problem of ambipolarity, gate leakage current (Ig) and slightly improves the gate to drain capacitance, but DC performance is almost unaffected. Further, the use of low band gap material (Si0.5 Ge) in proposed device causes a drastic improvement in the DC as well as RF figures of merit. We have investigated the Si0.5 Ge as a suitable candidate among different low band gap materials. In addition, the sensitivity of gate-underlap in terms of gate to drain inversion and parasitic capacitances has been studied for HM-GUL-ED-TFET. Further, relatively it is observed that gate-underlap is a better way than drain-underlap in the proposed structure to improve Analog/RF performances without degrading the DC parameters of device. Additionally, hetero-junction alignment analysis has been done for fabrication feasibility.

  11. An organic water-gated ambipolar transistor with a bulk heterojunction active layer for stable and tunable photodetection

    Science.gov (United States)

    Xu, Haihua; Zhu, Qingqing; Wu, Tongyuan; Chen, Wenwen; Zhou, Guodong; Li, Jun; Zhang, Huisheng; Zhao, Ni

    2016-11-01

    Organic water-gated transistors (OWGTs) have emerged as promising sensing architectures for biomedical applications and environmental monitoring due to their ability of in-situ detection of biological substances with high sensitivity and low operation voltage, as well as compatibility with various read-out circuits. Tremendous progress has been made in the development of p-type OWGTs. However, achieving stable n-type operation in OWGTs due to the presence of solvated oxygen in water is still challenging. Here, we report an ambipolar OWGT based on a bulk heterojunction active layer, which exhibits a stable hole and electron transport when exposed to aqueous environment. The device can be used as a photodetector both in the hole and electron accumulation regions to yield a maximum responsivity of 0.87 A W-1. More importantly, the device exhibited stable static and dynamic photodetection even when operated in the n-type mode. These findings bring possibilities for the device to be adopted for future biosensing platforms, which are fully compatible with low-cost and low-power organic complementary circuits.

  12. The pH sensing characteristics of the extended-gate field-effect transistors of multi-walled carbon-nanotube thin film using low-temperature ultrasonic spray method.

    Science.gov (United States)

    Chien, Yun-Shan; Yang, Po-Yu; Tsai, Wan-Lin; Li, Yu-Ren; Chou, Chia-Hsin; Chou, Jung-Chuan; Cheng, Huang-Chung

    2012-07-01

    A novel, simple and low-temperature ultrasonic spray method was developed to fabricate the multi-walled carbon-nanotubes (MWCNTs) based extended-gate field-effect transistors (EGFETs) as the pH sensor. With an acid-treated process, the chemically functionalized two-dimensional MWCNT network could provide plenty of functional groups which exhibit hydrophilic property and serve as hydrogen sensing sites. For the first time, the EGFET using a MWCNT structure could achieve a wide sensing rage from pH = 1 to pH = 13. Furthermore, the pH sensitivity and linearity values of the CNT pH-EGFET devices were enhanced to 51.74 mV/pH and 0.9948 from pH = 1 to pH = 13 while the sprayed deposition reached 50 times. The sensing properties of hydrogen and hydroxyl ions show significantly dependent on the sprayed deposition times, morphologies, crystalline and chemical bonding of acid-treated MWCNT. These results demonstrate that the MWCNT-EGFETs are very promising for the applications in the pH and biomedical sensors.

  13. Carbon nanotube junctions and devices

    NARCIS (Netherlands)

    Postma, H.W.Ch.

    2001-01-01

    In this thesis Postma presents transport experiments performed on individual single-wall carbon nanotubes. Carbon nanotubes are molecules entirely made of carbon atoms. The electronic properties are determined by the exact symmetry of the nanotube lattice, resulting in either metallic or

  14. Molecular dynamics study of Ar flow and He flow inside carbon nanotube junction as a molecular nozzle and diffuser

    Directory of Open Access Journals (Sweden)

    Itsuo Hanasaki, Akihiro Nakatani and Hiroshi Kitagawa

    2004-01-01

    Full Text Available A carbon nanotube junction consists of two connected nanotubes with different diameters. It has been extensively investigated as a molecular electronic device since carbon nanotubes can be metallic and semiconductive, depending on their structure. However, a carbon nanotube junction can also be viewed as a nanoscale nozzle andv diffuser. Here, we focus on the nanotube junction from the perspective of an intersection between machine, material and device. We have conducted a molecular dynamics simulation of the molecular flow inside a modeled (12,12–(8,8 nanotube junction. A strong gravitational field and a periodic boundary condition are applied in the flow direction. We investigated dense-Ar flows and dense-He flows while controlling the temperature of the nanotube junction. The results show that Ar atoms tend to be near to the wall and the density of the Ar is higher in the wide (12,12 nanotube than in the narrow (8,8 nanotube, while it is lower in the wide tube when no flow occurs. The streaming velocities of both the Ar and the He are higher in the narrow nanotube than in the wide nanotube, but the velocity of the Ar is higher than the velocity of the He and the temperature of the flowing Ar is higher than the temperature of the He when the same magnitude of gravitational field is applied.

  15. Synthesis of carbon nanotubes and nanotube forests on copper catalyst

    International Nuclear Information System (INIS)

    Kruszka, Bartosz; Terzyk, Artur P; Wiśniewski, Marek; Gauden, Piotr A; Szybowicz, Mirosław

    2014-01-01

    The growth of carbon nanotubes on bulk copper is studied. We show for the first time, that super growth chemical vapor deposition method can be successfully applied for preparation of nanotubes on copper catalyst, and the presence of hydrogen is necessary. Next, different methods of copper surface activation are studied, to improve catalyst efficiency. Among them, applied for the first time for copper catalyst in nanotubes synthesis, sulfuric acid activation is the most promising. Among tested samples the surface modified for 10 min is the most active, causing the growth of vertically aligned carbon nanotube forests. Obtained results have potential importance in application of nanotubes and copper in electronic chips and nanodevices. (paper)

  16. Applied Physics of Carbon Nanotubes Fundamentals of Theory, Optics and Transport Devices

    CERN Document Server

    Rotkin, Slava V

    2005-01-01

    The book describes the state-of-the-art in fundamental, applied and device physics of nanotubes, including fabrication, manipulation and characterization for device applications; optics of nanotubes; transport and electromechanical devices and fundamentals of theory for applications. This information is critical to the field of nanoscience since nanotubes have the potential to become a very significant electronic material for decades to come. The book will benefit all all readers interested in the application of nanotubes, either in their theoretical foundations or in newly developed characterization tools that may enable practical device fabrication.

  17. Carbon-nanotube-based liquids: a new class of nanomaterials and their applications

    International Nuclear Information System (INIS)

    Phan, Ngoc Minh; Nguyen, Manh Hong; Phan, Hong Khoi; Bui, Hung Thang

    2014-01-01

    Carbon-nanotube-based liquids—a new class of nanomaterials—have shown many interesting properties and distinctive features offering unprecedented potential for many applications. This paper summarizes the recent progress on the study of the preparation, characterization and properties of carbon-nanotube-based liquids including so-called nanofluids, nanolubricants and different kinds of nanosolutions containing multi-walled carbon nanotubes/single-walled carbon nanotubes/graphene. A broad range of current and future applications of these nanomaterials in the fields of energy saving, power electronic and optoelectronic devices, biotechnology and agriculture are presented. The paper also identifies challenges and opportunities for future research. (paper)

  18. MnO{sub 2} nanotube and nanowire arrays by electrochemical deposition for supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Hui; Feng, Jinkui; Wang, Hailong; Lai, Man On; Lu, Li [Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117576 (Singapore)

    2010-07-01

    Highly ordered MnO{sub 2} nanotube and nanowire arrays are successfully synthesized via a electrochemical deposition technique using porous alumina templates. The morphologies and microstructures of the MnO{sub 2} nanotube and nanowire arrays are investigated by field emission scanning electron microscopy and transmission electron microscopy. Electrochemical characterization demonstrates that the MnO{sub 2} nanotube array electrode has superior capacitive behaviour to that of the MnO{sub 2} nanowire array electrode. In addition to high specific capacitance, the MnO{sub 2} nanotube array electrode also exhibits good rate capability and good cycling stability, which makes it promising candidate for supercapacitors. (author)

  19. Aligned carbon nanotubes. Physics, concepts, fabrication and devices

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Zhifeng; Lan, Yucheng [Boston College, Chestnut Hill, MA (United States). Dept. of Physics; Wang, Yang [South China Normal Univ. Guangzhou (China). Inst. for Advanced Materials

    2013-07-01

    This book gives a survey of the physics and fabrication of carbon nanotubes and their applications in optics, electronics, chemistry and biotechnology. It focuses on the structural characterization of various carbon nanotubes, fabrication of vertically or parallel aligned carbon nanotubes on substrates or in composites, physical properties for their alignment, and applications of aligned carbon nanotubes in field emission, optical antennas, light transmission, solar cells, chemical devices, bio-devices, and many others. Major fabrication methods are illustrated in detail, particularly the most widely used PECVD growth technique on which various device integration schemes are based, followed by applications such as electrical interconnects, nanodiodes, optical antennas, and nanocoax solar cells, whereas current limitations and challenges are also be discussed to lay the foundation for future developments.

  20. Direct integration of carbon nanotubes in Si microstructures

    International Nuclear Information System (INIS)

    Aasmundtveit, Knut E; Ta, Bao Q; Halvorsen, Einar; Hoivik, Nils; Lin, Liwei

    2012-01-01

    In this paper we present a low-cost, room-temperature process for integrating carbon nanotubes on Si microsystems. The process uses localized resistive heating by controlling current through suspended microbridges, to provide local temperatures high enough for CVD growth of carbon nanotubes. Locally grown carbon nanotubes make electrical connections through guidance by electric fields, thus eventually making circuits. The process is scalable to a wafer level batch process. Furthermore, it is controlled electrically, thus enabling automated control. Direct integration of carbon nanotubes in microstructures has great promise for nano-functional devices, such as ultrasensitive chemical sensors. Initial measurements demonstrate the Si–carbon nanotube–Si circuit's potential as a NH 3 sensor. (paper)

  1. Noise characteristics of single-walled carbon nanotube network transistors

    International Nuclear Information System (INIS)

    Kim, Un Jeong; Kim, Kang Hyun; Kim, Kyu Tae; Min, Yo-Sep; Park, Wanjun

    2008-01-01

    The noise characteristics of randomly networked single-walled carbon nanotubes grown directly by plasma enhanced chemical vapor deposition (PECVD) are studied with field effect transistors (FETs). Due to the geometrical complexity of nanotube networks in the channel area and the large number of tube-tube/tube-metal junctions, the inverse frequency, 1/f, dependence of the noise shows a similar level to that of a single single-walled carbon nanotube transistor. Detailed analysis is performed with the parameters of number of mobile carriers and mobility in the different environment. This shows that the change in the number of mobile carriers resulting in the mobility change due to adsorption and desorption of gas molecules (mostly oxygen molecules) to the tube surface is a key factor in the 1/f noise level for carbon nanotube network transistors

  2. van der Waals interaction between a microparticle and a single-walled carbon nanotube

    International Nuclear Information System (INIS)

    Blagov, E. V.; Mostepanenko, V. M.; Klimchitskaya, G. L.

    2007-01-01

    The Lifshitz-type formulas describing the free energy and the force of the van der Waals interaction between an atom (molecule) and a single-walled carbon nanotube are obtained. The single-walled nanotube is considered as a cylindrical sheet carrying a two-dimensional free-electron gas with appropriate boundary conditions on the electromagnetic field. The obtained formulas are used to calculate the van der Waals free energy and force between a hydrogen atom (molecule) and single-walled carbon nanotubes of different radii. Comparison studies of the van der Waals interaction of hydrogen atoms with single-walled and multiwalled carbon nanotubes show that depending on atom-nanotube separation distance, the idealization of graphite dielectric permittivity is already applicable to nanotubes with only two or three walls

  3. Structure of carbon and boron nitride nanotubes produced by mechano-thermal process

    International Nuclear Information System (INIS)

    Chen, Y.; Conway, M.; FitzGerald, J.; Williams, J.S.; Chadderton, L.T.

    2002-01-01

    Full text: Structure of carbon and boron nitride (BN) nanotubes produced by mechano-thermal process has been investigated by using field-emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) including high resolution TEM. FESEM and TEM reveal that nanotubes obtained have a diameter varying from several nm to 200 nm and a length of several micrometers. The size of the nanotubes appears to depend on both milling and heating conditions. Many nanotubes are extruded from particle clusters, implying a special growth mechanism. TEM reveals single- and multi- wall tubular structures and different caps. Bomboo-type nanotubes containing small metal particles inside are also observed in both carbon and BN tubes. This investigation shows that nanotubes with controlled size and structure could be produced by the mechano-thermal process

  4. Magnetic Field Effect in Conjugated Molecules-Based Devices

    Science.gov (United States)

    2017-10-23

    line shapes of magnetoconductance curves for diodes of pentacene:fullerene charge transfer complexes” Org . Electron. 15, 3076 (2014). (AOARD-14-4012...2. “The origins in the transformation of ambipolar to n-type pentacene-based organic field-effect transistors” Org . Electron. 15, 1759 (2014...shell nanoparticles doped PEDOT:PSS hole-transporter. Org . Electron. : Phys. Mater. Appl. 33, 221-226 (2016). 5. Huang, X., Wang, K. Yi, C., Meng, T

  5. Intrinsic graphene field effect transistor on amorphous carbon films

    OpenAIRE

    Tinchev, Savcho

    2013-01-01

    Fabrication of graphene field effect transistor is described which uses an intrinsic graphene on the surface of as deposited hydrogenated amorphous carbon films. Ambipolar characteristic has been demonstrated typical for graphene devices, which changes to unipolar characteristic if the surface graphene was etched in oxygen plasma. Because amorphous carbon films can be growth easily, with unlimited dimensions and no transfer of graphene is necessary, this can open new perspective for graphene ...

  6. Electron diffraction from carbon nanotubes

    International Nuclear Information System (INIS)

    Qin, L-C

    2006-01-01

    The properties of a carbon nanotube are dependent on its atomic structure. The atomic structure of a carbon nanotube can be defined by specifying its chiral indices (u, v), that specify its perimeter vector (chiral vector), with which the diameter and helicity are also determined. The fine electron beam available in a modern transmission electron microscope (TEM) offers a unique probe to reveal the atomic structure of individual nanotubes. This review covers two aspects related to the use of the electron probe in the TEM for the study of carbon nanotubes: (a) to understand the electron diffraction phenomena for inter-pretation of the electron diffraction patterns of carbon nanotubes and (b) to obtain the chiral indices (u, v), of the carbon nanotubes from the electron diffraction patterns. For a nanotube of a given structure, the electron scattering amplitude from the carbon nanotube is first described analytically in closed form using the helical diffraction theory. From a known structure as given by the chiral indices (u, v), its electron diffraction pattern can be calculated and understood. The reverse problem, i.e. assignment of the chiral indices from an electron diffraction pattern of a carbon nanotube, is approached from the relationship between the electron scattering intensity distribution and the chiral indices (u, v). We show that electron diffraction patterns can provide an accurate and unambiguous assignment of the chiral indices of carbon nanotubes. The chiral indices (u, v) can be read indiscriminately with a high accuracy from the intensity distribution on the principal layer lines in an electron diffraction pattern. The symmetry properties of electron diffraction from carbon nanotubes and the electron diffraction from deformed carbon nanotubes are also discussed in detail. It is shown that 2mm symmetry is always preserved for single-walled carbon nanotubes, but it can break down for multiwalled carbon nanotubes under some special circumstances

  7. Adhered Supported Carbon Nanotubes

    International Nuclear Information System (INIS)

    Johnson, Dale F.; Craft, Benjamin J.; Jaffe, Stephen M.

    2001-01-01

    Carbon nanotubes (NTs) in excess of 200 μm long are grown by catalytic pyrolysis of hydrocarbon vapors. The nanotubes grow continuously without the typical extinction due to catalyst encapsulation. A woven metal mesh supports the nanotubes creating a metal supported nanotube (MSNT) structure. The 140 μm wide mesh openings are completely filled by 70 nm diameter multiwalled nanotubes (MWNTs). The MWNTs are straight, uniform and highly crystalline. Their wall thickness is about 10 nm (30 graphite layers). The adherent NTs are not removed from the support in a Scotch tape pull test. A 12.5 cm 2 capacitor made from two MSNT structures immersed in 1 M KCl has a capacitance of 0.35 F and an equivalent series resistance of 0.18 Ω. Water flows through the MSNT at a flow velocity of 1 cm/min with a pressure drop of 15 inches of water. With the support removed, the MWNTs naturally form a carbon nanocomposite (CNC) paper with a specific area of 80 m 2 /gm, a bulk density of 0.21 g/cm 3 , an open pore fraction of 0.81, and a resistivity of 0.16 Ω-cm

  8. Optical properties of carbon nanotubes

    Science.gov (United States)

    Chen, Gugang

    This thesis addresses the optical properties of novel carbon filamentary nanomaterials: single-walled carbon nanotubes (SWNTs), double-walled carbon nanotubes (DWNTs), and SWNTs with interior C60 molecules ("peapods"). Optical reflectance spectra of bundled SWNTs are discussed in terms of their electronic energy band structure. An Effective Medium Model for a composite material was found to provide a reasonable description of the spectra. Furthermore, we have learned from optical absorption studies of DWNTs and C60-peapods that the host tube and the encapsulant interact weakly; small shifts in interband absorption structure were observed. Resonant Raman scattering studies on SWNTs synthesized via the HiPCO process show that the "zone-folding" approximation for phonons and electrons works reasonably well, even for small diameter (d effect, rather than the vdW interaction. Finally, we studied the chemical doping of DWNTs, where the dopant (Br anions) is chemically bound to the outside of the outer tube. The doped DWNT system is a model for a cylindrical molecular capacitor. We found experimentally that 90% of the positive charge resides on the outer tube, so that most of electric field on the inner tube is screened, i.e., we have observed a molecular Faraday cage effect. A self-consistent theoretical model in the tight-binding approximation with a classical electrostatic energy term is in good agreement with our experimental results.

  9. Density controlled carbon nanotube array electrodes

    Science.gov (United States)

    Ren, Zhifeng F [Newton, MA; Tu, Yi [Belmont, MA

    2008-12-16

    CNT materials comprising aligned carbon nanotubes (CNTs) with pre-determined site densities, catalyst substrate materials for obtaining them and methods for forming aligned CNTs with controllable densities on such catalyst substrate materials are described. The fabrication of films comprising site-density controlled vertically aligned CNT arrays of the invention with variable field emission characteristics, whereby the field emission properties of the films are controlled by independently varying the length of CNTs in the aligned array within the film or by independently varying inter-tubule spacing of the CNTs within the array (site density) are disclosed. The fabrication of microelectrode arrays (MEAs) formed utilizing the carbon nanotube material of the invention is also described.

  10. Effect of amino acid-functionalized multi-walled carbon nanotubes ...

    Indian Academy of Sciences (India)

    In a single-step, rapid microwave-assisted process, multi-walled carbon nanotubes were functionalized by -valine amino acid. Formation of amino acid on nanotube surface was confirmed by Fourier transform-infrared spectroscopy, thermogravimetric analysis, X-ray diffraction, field emission scanning and transmission ...

  11. Investigation of parameters controlling the dielectrophoretic assembly of carbon nanotubes on microelectrodes

    DEFF Research Database (Denmark)

    Dimaki, Maria; Bøggild, Peter

    2008-01-01

    Networks of single-walled carbon nanotubes were assembled onto microelectrodes by dielectrophoresis. The dependence of the obtained networks on several assembly parameters such as bias voltage, field application time, frequency, electrode geometry and the nanotube solvent were investigated both s...

  12. Soldering of Nanotubes onto Microelectrodes

    DEFF Research Database (Denmark)

    Madsen, Dorte Nørgaard; Mølhave, Kristian; Mateiu, Ramona Valentina

    2003-01-01

    Suspended bridges of individual multiwalled carbon nanotubes were fabricated inside a scanning electron microscope by soldering the nanotube onto microelectrodes with highly conducting gold-carbon material. By the decomposition of organometallic vapor with the electron beam, metal-containing sold...... bonds were consistently found to be mechanically stronger than the carbon nanotubes.......Suspended bridges of individual multiwalled carbon nanotubes were fabricated inside a scanning electron microscope by soldering the nanotube onto microelectrodes with highly conducting gold-carbon material. By the decomposition of organometallic vapor with the electron beam, metal-containing solder...... bonds were formed at the intersection of the nanotube and the electrodes. Current-voltage curves indicated metallic conduction of the nanotubes, with resistances in the range of 9-29 kOmega. Bridges made entirely of the soldering material exhibited resistances on the order of 100 Omega, and the solder...

  13. Magnetic properties and thermodynamics in a metallic nanotube

    International Nuclear Information System (INIS)

    Jiang, Wei; Li, Xiao-Xi; Guo, An-Bang; Guan, Hong-Yu; Wang, Zan; Wang, Kai

    2014-01-01

    A metallic nanotube composed of the ferromagnetic spin-3/2 inner shell and spin-1 outer shell with a ferrimagnetic interlayer coupling has been studied by using the effective-field theory with correlations (EFT). With both existence of the magnetic anisotropy and transverse field, we have studied effects of them on the magnetic properties and the thermodynamics. Some interesting phenomena have been found in the phase diagrams. At low temperature, the magnetization curves present different behaviors. Two compensation points have been found for the certain values of the system parameters in the system. The research results of metallic nanotubes may have potential applications in the fields of biomedicine and molecular devices. - Highlights: • A hexagonal metallic nanotube is composed of spin-3/2 inner layer and spin-1 outer layer. • Various types of magnetization curves depend on physical parameters and temperature. • We study the effects of physical parameters on the magnetic properties and thermodynamics

  14. Self Consistent Ambipolar Transport and High Frequency Oscillatory Transient in Graphene Electronics

    Science.gov (United States)

    2015-08-17

    scholarships or fellowships for further studies in science, mathematics, engineering or technology fields: Student Metrics This section only applies...whereas strong Coulomb scattering arising from the charged dopants would offset the effect. In graphene, the absence of an energy gap guarantees carriers...carrier dynamics, as long as the Coulomb scattering (dopant concentration) can be kept weak, as shown in Ref. 68 and later on in this analysis. Note

  15. Y2O3:Yb/Er nanotubes: Layer-by-layer assembly on carbon-nanotube templates and their upconversion luminescence properties

    International Nuclear Information System (INIS)

    Huang, Weishi; Shen, Jianfeng; Wan, Lei; Chang, Yu; Ye, Mingxin

    2012-01-01

    Graphical abstract: Well-shaped Y 2 O 3 :Yb/Er nanotubes have been successfully synthesized on a large scale via layer-by-layer assembly on carbon nanotubes templates followed by a subsequent heat treatment process. The as-prepared Y 2 O 3 :Yb/Er nanotubes show a strong red emission corresponding to the 4 F 9/2 – 4 I 15/2 transition of the Er 3+ ions under excitation at 980 nm. Display Omitted Highlights: ► Well-shaped Y 2 O 3 :Yb/Er nanotubes have been successfully synthesized. ► CNTs were used as templates for Y 2 O 3 :Yb/Er nanotubes. ► LBL assembly and calcination were used for preparation of Y 2 O 3 :Yb/Er nanotubes. ► The as-prepared Y 2 O 3 :Yb/Er nanotubes show a strong red emission. -- Abstract: Well-shaped Y 2 O 3 :Yb/Er nanotubes have been successfully synthesized on a large scale via layer-by-layer (LBL) assembly on carbon nanotubes (CNTs) templates followed by a subsequent heat treatment process. The crystal structure, element analysis, morphology and upconversion luminescence properties were characterized. XRD results demonstrate that the diffraction peaks of the samples calcinated at 800 °C or above can be indexed to the pure cubic phase of Y 2 O 3 . SEM images indicate that a large quantity of uniform and rough nanotubes with diameters of about 30–60 nm can be observed. The as-prepared Y 2 O 3 :Yb/Er nanotubes show a strong red emission corresponding to the 4 F 9/2 – 4 I 15/2 transition of the Er 3+ ions under excitation at 980 nm, which have potential applications in such fields as nanoscale devices, molecular catalysts, nanobiotechnology, photonics and optoelectronics.

  16. High-speed growth of TiO2 nanotube arrays with gradient pore diameter and ultrathin tube wall under high-field anodization

    Science.gov (United States)

    Yuan, Xiaoliang; Zheng, Maojun; Ma, Li; Shen, Wenzhong

    2010-10-01

    Highly ordered TiO2 nanotubular arrays have been prepared by two-step anodization under high field. The high anodizing current densities lead to a high-speed film growth (0.40-1.00 µm min - 1), which is nearly 16 times faster than traditional fabrication of TiO2 at low field. It was found that an annealing process of Ti foil is an effective approach to get a monodisperse and double-pass TiO2 nanotubular layer with a gradient pore diameter and ultrathin tube wall (nearly 10 nm). A higher anodic voltage and longer anodization time are beneficial to the formation of ultrathin tube walls. This approach is simple and cost-effective in fabricating high-quality ordered TiO2 nanotubular arrays for practical applications.

  17. High-speed growth of TiO{sub 2} nanotube arrays with gradient pore diameter and ultrathin tube wall under high-field anodization

    Energy Technology Data Exchange (ETDEWEB)

    Yuan Xiaoliang; Zheng Maojun; Shen Wenzhong [Key Laboratory of Artificial Structures and Quantum Control, Ministry of Education, Department of Physics, Shanghai Jiao Tong University, Shanghai 200240 (China); Ma Li, E-mail: mjzheng@sjtu.edu.cn [School of Chemistry and Chemical Technology, Shanghai Jiao Tong University, Shanghai 200240 (China)

    2010-10-08

    Highly ordered TiO{sub 2} nanotubular arrays have been prepared by two-step anodization under high field. The high anodizing current densities lead to a high-speed film growth (0.40-1.00 {mu}m min{sup -1}), which is nearly 16 times faster than traditional fabrication of TiO{sub 2} at low field. It was found that an annealing process of Ti foil is an effective approach to get a monodisperse and double-pass TiO{sub 2} nanotubular layer with a gradient pore diameter and ultrathin tube wall (nearly 10 nm). A higher anodic voltage and longer anodization time are beneficial to the formation of ultrathin tube walls. This approach is simple and cost-effective in fabricating high-quality ordered TiO{sub 2} nanotubular arrays for practical applications.

  18. Continuous carbon nanotube reinforced composites.

    Science.gov (United States)

    Ci, L; Suhr, J; Pushparaj, V; Zhang, X; Ajayan, P M

    2008-09-01

    Carbon nanotubes are considered short fibers, and polymer composites with nanotube fillers are always analogues of random, short fiber composites. The real structural carbon fiber composites, on the other hand, always contain carbon fiber reinforcements where fibers run continuously through the composite matrix. With the recent optimization in aligned nanotube growth, samples of nanotubes in macroscopic lengths have become available, and this allows the creation of composites that are similar to the continuous fiber composites with individual nanotubes running continuously through the composite body. This allows the proper utilization of the extreme high modulus and strength predicted for nanotubes in structural composites. Here, we fabricate such continuous nanotube polymer composites with continuous nanotube reinforcements and report that under compressive loadings, the nanotube composites can generate more than an order of magnitude improvement in the longitudinal modulus (up to 3,300%) as well as damping capability (up to 2,100%). It is also observed that composites with a random distribution of nanotubes of same length and similar filler fraction provide three times less effective reinforcement in composites.

  19. Nanotube formation and morphology change of Ti alloys containing Hf for dental materials use

    International Nuclear Information System (INIS)

    Jeong, Yong-Hoon; Lee, Kang; Choe, Han-Cheol; Ko, Yeong-Mu; Brantley, William A.

    2009-01-01

    In this paper, Ti-Hf (10, 20, 30 and 40 wt.%) alloys were prepared by arc melting, and subjected to heat treatment for 24 h at 1000 o C in an argon atmosphere. Formation of surface nanotubes was achieved by anodizing a Ti-Hf alloy in 1.0 M H 3 PO 4 electrolytes with small amounts of NaF at room temperature. Microstructures of the alloys and nanotube morphology were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD). The homogenized Ti-Hf alloys had a needle-like microstructure of α phase, and nanotubes formed on Ti-xHf alloys had the anatase phase after treatment that promoted crystallization. Uniform nanotubes formed for Hf contents up to 20 wt.%. Irregular nanotubes formed on the Ti-30Hf and Ti-40Hf alloys. The structure of the irregular layers on the Ti-30Hf and Ti-40Hf alloys had nanotubes of two sizes. Increasing the Hf content in Ti led to the formation of nanotubes with more narrow size. The pores in the nanotubes typically had a diameter ranging from 80-120 nm and a length of approximately 1.7 μm. It is concluded that nanotube morphology on Ti-Hf alloys can controlled by varying the amount of Hf.

  20. Study on the growth of aligned carbon nanotubes controlled by ion bombardment

    International Nuclear Information System (INIS)

    Wang Biben; Zhang Bing; Zheng Kun; Hao Wei; Wang Wanlu; Liao Kejun

    2004-01-01

    Aligned carbon nanotubes were prepared by plasma-enhanced hot filament chemical vapor deposition using CH 4 , H 2 and NH 3 as reaction gases. It was investigated how different negative bias affects the growth of aligned carbon nanotubes. The results indicate that the average diameter of the aligned carbon nanotubes is reduced and the average length of the aligned carbon nanotubes is increased with increasing negative bias. Because of the occurrence of glow discharge, a cathode sheath forms near the substrate surface, and a number of ions are produced in it, and a very strong electrical field builds up near the substrate surface. Under the effect of the field, the strong bombardment of ions on the substrate surface will influence the growth of aligned carbon nanotubes. Combined with related theories, authors have analyzed and discussed the ion bombardment effects on the growth of the aligned carbon nanotudes