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Sample records for aluminum oxide films

  1. Remote plasma-enhanced metalorganic chemical vapor deposition of aluminum oxide thin films

    NARCIS (Netherlands)

    Volintiru, I.; Creatore, M.; Hemmen, van J.L.; Sanden, van de M.C.M.

    2008-01-01

    Aluminum oxide films were deposited using remote plasma-enhanced metalorganic chemical vapor deposition from oxygen/trimethylaluminum mixtures. Initial studies by in situ spectroscopic ellipsometry demonstrated that the aluminum oxide films deposited at temperatures

  2. Electrophoretic deposition of PTFE particles on porous anodic aluminum oxide film and its tribological properties

    International Nuclear Information System (INIS)

    Zhang, Dongya; Dong, Guangneng; Chen, Yinjuan; Zeng, Qunfeng

    2014-01-01

    Polytetrafluoroethylene (PTFE) composite film was successfully fabricated by depositing PTFE particles into porous anodic aluminum oxide film using electrophoretic deposition (EPD) process. Firstly, porous anodic aluminum oxide film was synthesized by anodic oxidation process in sulphuric acid electrolyte. Then, PTFE particles in suspension were directionally deposited into the porous substrate. Finally, a heat treatment at 300 °C for 1 h was utilized to enhance PTFE particles adhesion to the substrate. The influence of anodic oxidation parameters on the morphology and micro-hardness of the porous anodic aluminum oxide film was studied and the PTFE particles deposited into the pores were authenticated using energy-dispersive spectrometer (EDS) and scanning electron microscopy (SEM). Tribological properties of the PTFE composite film were investigated under dry sliding. The experimental results showed that the composite film exhibit remarkable low friction. The composite film had friction coefficient of 0.20 which deposited in 15% PTFE emulsion at temperature of 15 °C and current density of 3 A/dm 2 for 35 min. In addition, a control specimen of porous anodic aluminum oxide film and the PTFE composite film were carried out under the same test condition, friction coefficient of the PTFE composite film was reduced by 60% comparing with the control specimen at 380 MPa and 100 mm/s. The lubricating mechanism was that PTFE particles embedded in porous anodic aluminum oxide film smeared a transfer film on the sliding path and the micro-pores could support the supplement of solid lubricant during the sliding, which prolonged the lubrication life of the aluminum alloys.

  3. Carbon contaminant in the ion processing of aluminum oxide film

    International Nuclear Information System (INIS)

    Chaug, Y.; Roy, N.

    1989-01-01

    Ion processing can induce contamination on the bombarded surface. However, this process is essential for the microelectronics device fabrication. Auger electron spectroscopy has been used to study the simultaneous deposition of carbon impurity during ion bombardment of magnetron rf-sputtering deposited aluminum oxide film. Ion bombardment on aluminum oxide results in a preferential removal of surface oxygen and a formation of a metastable state of aluminum suboxide. Cosputtered implanted carbon contaminant appears to have formed a new state of stoichiometry on the surface of the ion bombarded aluminum oxide and existed as an aluminum carbide. This phase has formed due to the interaction of the implanted carbon and the aluminum suboxide. The Ar + ion sputter etching rate is reduced for the carbon contaminated oxide. The electrical resistance of the aluminum oxide between two gold strips has been measured. It is found that the electrical resistance is also reduced due to the formation of the new stoichiometry on the surface

  4. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes

    Science.gov (United States)

    Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

    2016-02-01

    We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials.

  5. Structural and morphological changes in pseudobarrier films of anodic aluminum oxide caused by irradiation with high-energy particles

    International Nuclear Information System (INIS)

    Chernykh, M.A.; Belov, V.T.

    1988-01-01

    We have studied the structural and morphological changes, occurring under the electron beam in pseudobarrier films of anodic aluminum oxide, prepared in seven different solutions and irradiated beforehand by protons of x-rays, with the aim of elucidating the structure of anodic aluminum oxides. An increased stability of the pseudobarrier films of anodic aluminum oxide has been observed towards the action of the electron beam of an UEMV-100K microscope at standard working regimes (75 keV) as a result of irradiation with protons or x-rays. A difference has been found to exist between structural and morphological changes of anodic aluminum oxide films, prepared in different solutions, when irradiated with high-energy particles. A structural and phase inhomogeneity of amorphous pseudobarrier films of anodic aluminum oxide has been detected and its influence on the character of solid-phase transformations under the maximum-intensity electron beam

  6. Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices

    International Nuclear Information System (INIS)

    Jiang, X.; Wong, F.L.; Fung, M.K.; Lee, S.T.

    2003-01-01

    Highly transparent conductive, aluminum-doped zinc oxide (ZnO:Al) films were deposited on glass substrates by midfrequency magnetron sputtering of metallic aluminum-doped zinc target. ZnO:Al films with surface work functions between 3.7 and 4.4 eV were obtained by varying the sputtering conditions. Organic light-emitting diodes (OLEDs) were fabricated on these ZnO:Al films. A current efficiency of higher than 3.7 cd/A, was achieved. For comparison, 3.9 cd/A was achieved by the reference OLEDs fabricated on commercial indium-tin-oxide substrates

  7. Aluminum oxide film thickness and emittance

    International Nuclear Information System (INIS)

    Thomas, J.K.; Ondrejcin, R.S.

    1991-11-01

    Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55 degrees C) moderator for about a year. The average moderator temperature was assumed to be 30 degrees C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 μm ± 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 μm ± 11%. Total hemispherical emittance is predicted to be 0.69 at 96 degrees C, decreasing to 0.45 at 600 degrees C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values

  8. Transition of hydrated oxide layer for aluminum electrolytic capacitors

    International Nuclear Information System (INIS)

    Chi, Choong-Soo; Jeong, Yongsoo; Ahn, Hong-Joo; Lee, Jong-Ho; Kim, Jung-Gu; Lee, Jun-Hee; Jang, Kyung-Wook; Oh, Han-Jun

    2007-01-01

    A hydrous oxide film for the application as dielectric film is synthesized by immersion of pure aluminum in hot water. From a Rutherford backscattering analysis, the ratio of aluminum to oxygen atoms was found to be 3:2 in the anodized aluminum oxide film, and 2:1 in the hydrous oxide layer. Anodization of the hydrous oxide layer was more effective for the transition of amorphous anodic oxides to the crystalline aluminum oxides

  9. Effect of oxide film formation on the fatigue behavior of aluminum alloy

    International Nuclear Information System (INIS)

    Kim, Jong Cheon; Cheong, Seong Kyun

    2012-01-01

    In this study, the effects of surface oxide film formation on the fatigue behavior of 7075-T6 aluminum alloy were analyzed in terms of the corrosion time of the alloy. The aluminum material used is known to have high corrosion resistance due to the passivation phenomenon that prevents corrosion. Aluminum alloys have been widely used in various industrial applications such as aircraft component manufacturing because of their lighter weight and higher strength than other materials. Therefore, studies on the fatigue behavior of materials and passivation properties that prevent corrosion are required. The fatigue behavior in terms of the corrosion time was analyzed by using a four pointing bending machine, and the surface corrosion level of the aluminum material in terms of the corrosion time was estimated by measuring the surface were studied by scanning electron microscopy (SEM). The results indicated that corrosion actively progressed for four weeks during the initial corrosion phase, the fatigue life significantly decreased, and the surface roughness increased. However, after four weeks, the corrosion reaction tended to slow down due to the passivation phenomenon of the material. Therefore, on the basis of SEM analysis results, it was concluded that the growth of the surface oxide film was reduced after four weeks and then the oxide film on the material surface served as a protection layer and prevented further corrosion

  10. Structural features of anodic oxide films formed on aluminum substrate coated with self-assembled microspheres

    International Nuclear Information System (INIS)

    Asoh, Hidetaka; Uchibori, Kota; Ono, Sachiko

    2009-01-01

    The structural features of anodic oxide films formed on an aluminum substrate coated with self-assembled microspheres were investigated by scanning electron microscopy and atomic force microscopy. In the first anodization in neutral solution, the growth of a barrier-type film was partially suppressed in the contact area between the spheres and the underlying aluminum substrate, resulting in the formation of ordered dimple arrays in an anodic oxide film. After the subsequent second anodization in acid solution at a voltage lower than that of the first anodization, nanopores were generated only within each dimple. The nanoporous region could be removed selectively by post-chemical etching using the difference in structural dimensions between the porous region and the surrounding barrier region. The mechanism of anodic oxide growth on the aluminum substrate coated with microspheres through multistep anodization is discussed.

  11. Structural features of anodic oxide films formed on aluminum substrate coated with self-assembled microspheres

    Energy Technology Data Exchange (ETDEWEB)

    Asoh, Hidetaka [Department of Applied Chemistry, Faculty of Engineering, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015 (Japan)], E-mail: asoh@cc.kogakuin.ac.jp; Uchibori, Kota; Ono, Sachiko [Department of Applied Chemistry, Faculty of Engineering, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015 (Japan)

    2009-07-15

    The structural features of anodic oxide films formed on an aluminum substrate coated with self-assembled microspheres were investigated by scanning electron microscopy and atomic force microscopy. In the first anodization in neutral solution, the growth of a barrier-type film was partially suppressed in the contact area between the spheres and the underlying aluminum substrate, resulting in the formation of ordered dimple arrays in an anodic oxide film. After the subsequent second anodization in acid solution at a voltage lower than that of the first anodization, nanopores were generated only within each dimple. The nanoporous region could be removed selectively by post-chemical etching using the difference in structural dimensions between the porous region and the surrounding barrier region. The mechanism of anodic oxide growth on the aluminum substrate coated with microspheres through multistep anodization is discussed.

  12. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    International Nuclear Information System (INIS)

    Lee, Ching-Ting; Lin, Yung-Hao; Lin, Jhong-Ham

    2015-01-01

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g m change, threshold voltage V T change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature

  13. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Ching-Ting, E-mail: ctlee@ee.ncku.edu.tw; Lin, Yung-Hao; Lin, Jhong-Ham [Institute of Microelectronics, Department of Electrical Engineering, Research Center for Energy Technology and Strategy (RCETS), National Cheng Kung University, Tainan, Taiwan (China)

    2015-01-28

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance g{sub m} change, threshold voltage V{sub T} change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature.

  14. Friction behaviour of anodic oxide film on aluminum impregnated with molybdenum sulfide compounds

    Energy Technology Data Exchange (ETDEWEB)

    Maejima, M.; Saruwatari, K. [Fujikura Ltd., Tokyo (Japan); Takaya, M. [Faculty of Engineering, Chiba Institute of Technology 17-1, Tsudanuma 2-Chome, 275-0016, Narasino-shi Chiba (Japan)

    2000-10-23

    In order to improve the lubricity and wear resistance of aluminum anodic oxide films, it is necessary to ensure the film layers are dense to prevent cracking, and to harden the films as well as reduce the shear stress of the film surfaces. From this view point, lubricious, hard anodic oxide films have been studied in the past, but fully satisfactory results have yet to be realized. In this paper, we report on our study of the re-anodizing of anodic oxide film in an aqueous solution of (NH)MoS. Molybdenum sulfide and compounds filled the 20-nm diameter pores of the film, creating internal stress which compressed the film, suppressing the occurrence of cracks and reducing the friction coefficient. (orig.)

  15. ORDERED POROUS ANODIC ALUMINUM OXIDE FILMS MADE BY TWO-STEP ANODIZATION

    OpenAIRE

    HANSONG XUE; HUAJI LI; YU YI; HUIFANG HU

    2007-01-01

    Porous Anodic Aluminum Oxide (AAO) films were prepared by two-step anodizing in sulfuric and oxalic acid solutions and observed by transmission electron microscope (TEM) and X-ray diffraction. The results show that the form of AAO film is affected by the varieties and concentrations of electrolyte, anodizing voltage, and the anodizing time; the formation and evolution processes of the AAO film are relative with the anodizing voltage severely, and the appropriate voltage is helpful to the orde...

  16. Oxidation of zirconium-aluminum alloys

    International Nuclear Information System (INIS)

    Cox, B.

    1967-10-01

    Examination of the processes occurring during the oxidation of Zr-1% A1, Zr-3% A1, and Zr-1.5% A1-0.5% Mo alloys has shown that in steam rapid oxidation occurs predominantly around the Zr 3 A1 particles, which at low temperatures appear to be relatively unattacked. The unoxidised particles become incorporated in the oxide, and become fully oxidised as the film thickens. This rapid localised oxidation is preceded by a short period of uniform film growth, during which the oxide film thickness does not exceed ∼200A-o. Thus the high oxidation rates can probably be ascribed to aluminum in solution in the zirconium matrix, although its precise mode of operation has not been determined. Once the solubility limit of aluminum is exceeded, the size, distribution and number of intermetallic particles affects the oxidation rate merely by altering the distribution of regions of metal giving high oxidation rates. The controlling process during the early stages of oxidation is electron transport and not ionic transport. Thus, the aluminum in the oxide film is presumably increasing the ionic conductivity more than the electronic. The oxidation rates in atmospheric pressure steam are very high and their irregular temperature dependence suggests that the oxidation rate will be pressure dependent. This was confirmed, in part, by a comparison with oxidation in moist air. It was found that the rate of development of white oxide around intermetallic particles was considerably reduced by the decrease in the partial pressure of H 2 O; the incubation period was not much different, however. (author)

  17. Electrical transport through single-wall carbon nanotube-anodic aluminum oxide-aluminum heterostructures

    International Nuclear Information System (INIS)

    Kukkola, Jarmo; Rautio, Aatto; Sala, Giovanni; Pino, Flavio; Toth, Geza; Leino, Anne-Riikka; Maeklin, Jani; Jantunen, Heli; Uusimaeki, Antti; Kordas, Krisztian; Gracia, Eduardo; Terrones, Mauricio; Shchukarev, Andrey; Mikkola, Jyri-Pekka

    2010-01-01

    Aluminum foils were anodized in sulfuric acid solution to form thick porous anodic aluminum oxide (AAO) films of thickness ∼6 μm. Electrodes of carboxyl-functionalized single-wall carbon nanotube (SWCNT) thin films were inkjet printed on the anodic oxide layer and the electrical characteristics of the as-obtained SWCNT-AAO-Al structures were studied. Nonlinear current-voltage transport and strong temperature dependence of conduction through the structure was measured. The microstructure and chemical composition of the anodic oxide layer was analyzed using transmission and scanning electron microscopy as well as x-ray photoelectron spectroscopy. Schottky emission at the SWCNT-AAO and AAO-Al interfaces allowed by impurity states in the anodic aluminum oxide film together with ionic surface conduction on the pore walls of AAO gives a reasonable explanation for the measured electrical conduction. Calcined AAO is proposed as a dielectric material for SWCNT-field effect transistors.

  18. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.

    2013-07-18

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  19. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  20. Luminescence properties of oxide films formed by anodization of aluminum in 12-tungstophosphoric acid

    International Nuclear Information System (INIS)

    Stojadinovic, S.; Vasilic, R.; Petkovic, M.; Nedic, Z.; Kasalica, B.; Belca, I.; Zekovic, Lj.

    2010-01-01

    In this paper, we have investigated luminescence properties of oxide films formed by anodization of aluminum in 12-tungstophosphoric acid. For the first time we have measured weak luminescence during anodization of aluminum in this electrolyte (so-called galvanoluminescence GL) and showed that there are wide GL bands in the visible region of the spectrum and observed two dominant spectral peaks. The first one is at about 425 nm, and the second one shifts with anodization voltage. As the anodization voltage approaches the breakdown voltage, a large number of sparks appear superimposed on the anodic GL. Several intensive band peaks were observed under breakdown caused by electron transitions in W, P, Al, O, H atoms. Furthermore, photoluminescence (PL) of anodic oxide films and anodic-spark formed oxide coatings were performed. In both cases wide PL bands in the range from 320 nm to 600 nm were observed.

  1. Modelling the growth process of porous aluminum oxide film during anodization

    International Nuclear Information System (INIS)

    Aryslanova, E M; Alfimov, A V; Chivilikhin, S A

    2015-01-01

    Currently it has become important for the development of metamaterials and nanotechnology to obtain regular self-assembled structures. One such structure is porous anodic alumina film that consists of hexagonally packed cylindrical pores. In this work we consider the anodization process, our model takes into account the influence of layers of aluminum and electrolyte on the rate of growth of aluminum oxide, as well as the effect of surface diffusion. In present work we consider those effects. And as a result of our model we obtain the minimum distance between centers of alumina pores in the beginning of anodizing process. (paper)

  2. Modelling the growth process of porous aluminum oxide film during anodization

    Science.gov (United States)

    Aryslanova, E. M.; Alfimov, A. V.; Chivilikhin, S. A.

    2015-11-01

    Currently it has become important for the development of metamaterials and nanotechnology to obtain regular self-assembled structures. One such structure is porous anodic alumina film that consists of hexagonally packed cylindrical pores. In this work we consider the anodization process, our model takes into account the influence of layers of aluminum and electrolyte on the rate of growth of aluminum oxide, as well as the effect of surface diffusion. In present work we consider those effects. And as a result of our model we obtain the minimum distance between centers of alumina pores in the beginning of anodizing process.

  3. Superhydrophilicity of anodic aluminum oxide films: From 'honeycomb' to 'bird's nest'

    International Nuclear Information System (INIS)

    Ye Jiaming; Yin Qiming; Zhou Yongliang

    2009-01-01

    An electrochemical method has been used to prepare different kinds of surfaces including 'honeycomb'-like and 'bird's nest'-like surfaces on anodic aluminum oxide (AAO) films. The relationship between the morphology and wettability of the AAO films was investigated by scanning electron microscopy and the measurement of water contact angles. The results show that the 'bird's nest'-like structure is necessary for superhydrophilic property, which provide direct experimental evidences for the 3D capillary theory concerning superhydrophilicity. It is expected that this investigation will be devoted to guiding the fabrication of superhydrophilic and superhydrophobic surfaces.

  4. Air-Impregnated Nanoporous Anodic Aluminum Oxide Layers for Enhancing the Corrosion Resistance of Aluminum.

    Science.gov (United States)

    Jeong, Chanyoung; Lee, Junghoon; Sheppard, Keith; Choi, Chang-Hwan

    2015-10-13

    Nanoporous anodic aluminum oxide layers were fabricated on aluminum substrates with systematically varied pore diameters (20-80 nm) and oxide thicknesses (150-500 nm) by controlling the anodizing voltage and time and subsequent pore-widening process conditions. The porous nanostructures were then coated with a thin (only a couple of nanometers thick) Teflon film to make the surface hydrophobic and trap air in the pores. The corrosion resistance of the aluminum substrate was evaluated by a potentiodynamic polarization measurement in 3.5 wt % NaCl solution (saltwater). Results showed that the hydrophobic nanoporous anodic aluminum oxide layer significantly enhanced the corrosion resistance of the aluminum substrate compared to a hydrophilic oxide layer of the same nanostructures, to bare (nonanodized) aluminum with only a natural oxide layer on top, and to the latter coated with a thin Teflon film. The hydrophobic nanoporous anodic aluminum oxide layer with the largest pore diameter and the thickest oxide layer (i.e., the maximized air fraction) resulted in the best corrosion resistance with a corrosion inhibition efficiency of up to 99% for up to 7 days. The results demonstrate that the air impregnating the hydrophobic nanopores can effectively inhibit the penetration of corrosive media into the pores, leading to a significant improvement in corrosion resistance.

  5. Reactive ion assisted deposition of aluminum oxynitride thin films

    International Nuclear Information System (INIS)

    Hwangbo, C.K.; Lingg, L.J.; Lehan, J.P.; Macleod, H.A.; Suits, F.

    1989-01-01

    Optical properties, stoichiometry, chemical bonding states, and crystal structure of aluminum oxynitride (AlO/sub x/N/sub y/) thin films prepared by reactive ion assisted deposition were investigated. The results show that by controlling the amount of reactive gases the refractive index of aluminum oxynitride films at 550 nm is able to be varied from 1.65 to 1.83 with a very small extinction coefficient. Variations of optical constants and chemical bonding states of aluminum oxynitride films are related to the stoichiometry. From an x-ray photoelectron spectroscopy analysis it is observed that our aluminum oxynitride film is not simply a mixture of aluminum oxide and aluminum nitride but a continuously variable compound. The aluminum oxynitride films are amorphous from an x-ray diffraction analysis. A rugate filter using a step index profile of aluminum oxynitride films was fabricated by nitrogen ion beam bombardment of a growing Al film with backfill oxygen pressure as the sole variation. This filter shows a high resistivity to atmospheric moisture adsorption, suggesting that the packing density of aluminum oxynitride films is close to unity and the energetic ion bombardment densifies the film as well as forming the compound

  6. Atomic-scale epitaxial aluminum film on GaAs substrate

    Directory of Open Access Journals (Sweden)

    Yen-Ting Fan

    2017-07-01

    Full Text Available Atomic-scale metal films exhibit intriguing size-dependent film stability, electrical conductivity, superconductivity, and chemical reactivity. With advancing methods for preparing ultra-thin and atomically smooth metal films, clear evidences of the quantum size effect have been experimentally collected in the past two decades. However, with the problems of small-area fabrication, film oxidation in air, and highly-sensitive interfaces between the metal, substrate, and capping layer, the uses of the quantized metallic films for further ex-situ investigations and applications have been seriously limited. To this end, we develop a large-area fabrication method for continuous atomic-scale aluminum film. The self-limited oxidation of aluminum protects and quantizes the metallic film and enables ex-situ characterizations and device processing in air. Structure analysis and electrical measurements on the prepared films imply the quantum size effect in the atomic-scale aluminum film. Our work opens the way for further physics studies and device applications using the quantized electronic states in metals.

  7. Features of the theories of the formation of oxide films on aluminum alloys piston diesel engines with micro-arc oxidation

    Directory of Open Access Journals (Sweden)

    Skryabin M.L.

    2017-12-01

    Full Text Available The article considers one of the promising methods of surface hardening of piston aluminum alloy – microarc oxidation. Described fundamental differences from the micro-arc oxidation anodizing and similar electrochemical processes. The schemes of formation of the barrier and outer layers surface treatment in aqueous electrolytes. Shows the mechanism of formation of the interface. Considers the formation of layers with high porosity and method of exposure. Also describes the exponential dependence of the current density from the electric field in the surface film of the base metal. The role of discharges in the formation of oxide layers on the treated surface. Proposed and described features of the three main theories of formation of oxide films on the surface of the piston: physical and geometrical model of Keller; models of formation of oxide films as a colloid formations and plasma theory (theory of oxidation with the formation of plasma in the zone of oxidation. The features of formation of films in each of the models. For the model of Keller porous oxide film is a close-Packed oxide cell, having the shape of a prism. They are based on a hexagonal prism. These cells have normal orientation to the surface of the metal. In the center of the unit cell there is one season that is a channel, whose size is determined by the composition of the electrolyte, the chemical composition of the base metal and the electrical parameters of the process of oxidation. In the micro-arc oxidation process according to this model, the beginning of the formation of cells occurs with the formation of the barrier layer, passing in the porous layer and, over time, the elonga-tion of the pores, due to the constant etching electrolyte. In the theory of formation of the oxide films as kolloidnyh formations revealed that formation of pores in the film is a result of their growth. The anodic oxide is represented by a directed electric field, the alumina gel colloidal and

  8. The application of the barrier-type anodic oxidation method to thickness testing of aluminum films

    Science.gov (United States)

    Chen, Jianwen; Yao, Manwen; Xiao, Ruihua; Yang, Pengfei; Hu, Baofu; Yao, Xi

    2014-09-01

    The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision.

  9. Structural and optical characterization of porous anodic aluminum oxide

    International Nuclear Information System (INIS)

    Galca, Aurelian C.; Kooij, E. Stefan; Wormeester, Herbert; Salm, Cora; Leca, Victor; Rector, Jan H.; Poelsema, Bene

    2003-01-01

    Spectroscopic ellipsometry and scanning electron microscopy (SEM) experiments are employed to characterize porous aluminum oxide obtained by anodization of thin aluminum films. Rutherford backscattering spectra and x-ray diffraction experiments provide information on the composition and the structure of the samples. Results on our thin film samples with a well-defined geometry show that anodization of aluminum is reproducible and results in a porous aluminum oxide network with randomly distributed, but perfectly aligned cylindrical pores perpendicular to the substrate. The ellipsometry spectra are analyzed using an anisotropic optical model, partly based on the original work by Bruggeman. The model adequately describes the optical response of the anodized film in terms of three physically relevant parameters: the film thickness, the cylinder fraction, and the nanoporosity of the aluminum oxide matrix. Values of the first two quantities, obtained from fitting the spectra, are in perfect agreement with SEM results, when the nanoporosity of the aluminum oxide matrix is taken into account. The validity of our optical model was verified over a large range of cylinder fractions, by widening of the pores through chemical etching in phosphoric acid. While the cylinder fraction increases significantly with etch time and etchant concentration, the nanoporosity remains almost unchanged. Additionally, based on a simple model considering a linear etch rate, the concentration dependence of the etch rate was determined

  10. High Dielectric Performance of Solution-Processed Aluminum Oxide-Boron Nitride Composite Films

    Science.gov (United States)

    Yu, Byoung-Soo; Ha, Tae-Jun

    2018-04-01

    The material compositions of oxide films have been extensively investigated in an effort to improve the electrical characteristics of dielectrics which have been utilized in various electronic devices such as field-effect transistors, and storage capacitors. Significantly, solution-based compositions have attracted considerable attention as a highly effective and practical technique to replace vacuum-based process in large-area. Here, we demonstrate solution-processed composite films consisting of aluminum oxide (Al2O3) and boron nitride (BN), which exhibit remarkable dielectric properties through the optimization process. The leakage current of the optimized Al2O3-BN thin films was decreased by a factor of 100 at 3V, compared to pristine Al2O3 thin film without a loss of the dielectric constant or degradation of the morphological roughness. The characterization by X-ray photoelectron spectroscopy measurements revealed that the incorporation of BN with an optimized concentration into the Al2O3 dielectric film reduced the density of oxygen vacancies which act as defect states, thereby improving the dielectric characteristics.

  11. Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Chunqing, E-mail: cdeng@uwaterloo.ca; Otto, M.; Lupascu, A., E-mail: alupascu@uwaterloo.ca [Institute for Quantum Computing, Department of Physics and Astronomy, and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)

    2014-01-27

    We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5 nm. We measure the dielectric loss versus microwave power for resonators with frequencies in the GHz range at temperatures from 54 to 303 mK. The power and temperature dependence of the loss are consistent with the tunneling two-level system theory. These results are relevant to understanding decoherence in superconducting quantum devices. The obtained oxide films are thin and robust, making them suitable for capacitors in compact microwave resonators.

  12. Depth Profiling Analysis of Aluminum Oxidation During Film Deposition in a Conventional High Vacuum System

    Science.gov (United States)

    Kim, Jongmin; Weimer, Jeffrey J.; Zukic, Muamer; Torr, Douglas G.

    1994-01-01

    The oxidation of aluminum thin films deposited in a conventional high vacuum chamber has been investigated using x-ray photoelectron spectroscopy (XPS) and depth profiling. The state of the Al layer was preserved by coating it with a protective MgF2 layer in the deposition chamber. Oxygen concentrations in the film layers were determined as a function of sputter time (depth into the film). The results show that an oxidized layer is formed at the start of Al deposition and that a less extensively oxidized Al layer is deposited if the deposition rate is fast. The top surface of the Al layer oxidizes very quickly. This top oxidized layer may be thicker than has been previously reported by optical methods. Maximum oxygen concentrations measured by XPS at each Al interface are related to pressure to rate ratios determined during the Al layer deposition.

  13. Preparation and analysis of anodic aluminum oxide films with continuously tunable interpore distances

    Science.gov (United States)

    Qin, Xiufang; Zhang, Jinqiong; Meng, Xiaojuan; Deng, Chenhua; Zhang, Lifang; Ding, Guqiao; Zeng, Hao; Xu, Xiaohong

    2015-02-01

    Nanoporous anodic aluminum oxides are often used as templates for preparation of nanostructures such as nanodot, nanowire and nanotube arrays. The interpore distance of anodic aluminum oxide is the most important parameter in controlling the periodicity of these nanostructures. Herein we demonstrate a simple and yet powerful method to fabricate ordered anodic aluminum oxides with continuously tunable interpore distances. By using mixed solution of citric and oxalic acids with different molar ratio, the range of anodizing voltages within which self-ordered films can be formed were extended to between 40 and 300 V, resulting in the interpore distances change from 100 to 750 nm. Our work realized very broad range of interpore distances in a continuously tunable fashion and the experiment processes are easily controllable and reproducible. The dependence of the interpore distances on acid ratios in mixed solutions was discussed through analysis of anodizing current and it was found that the effective dissociation constant of the mixed acids is of great importance. The interpore distances achieved are comparable to wavelengths ranging from UV to near IR, and may have potential applications in optical meta-materials for photovoltaics and optical sensing.

  14. Characterization of anodic barrier films on tantalum and 1100 aluminum by ISS/SIMS

    International Nuclear Information System (INIS)

    McCune, R.C.

    1978-01-01

    Ion scattering spectrometry (ISS) and concurrent secondary ion mass spectrometry (SIMS) were used to determine the depth profiles of anodic barrier oxide films grown on tantalum and type 1100 aluminum. The sputter rate in each case was determined from the film thickness measured by the anodic overvoltage, and the penetration time determined by the decrease in intensity of the metal oxide fragment observed using SIMS. A mixture of helium and neon ions was used to sputter aluminum oxide films in order to observe ion scattering of helium by oxygen, while taking advantage of the higher sputtering rate available with neon. A comparison of sputter rates for helium and neon on tantalum oxide indicated that neon sputtered the film at a rate eight times that of helium. SIMS depth profiling of the residual boron in the anodic aluminum oxide indicated a mixing effect which did not permit adequate resolution of the interface between the oxide film and the underlying metal

  15. Orientationally ordered ridge structures of aluminum films on hydrogen terminated silicon

    DEFF Research Database (Denmark)

    Quaade, Ulrich; Pantleon, Karen

    2006-01-01

    Films of aluminum deposited onto Si(100) substrates show a surface structure of parallel ridges. On films deposited on oxidized silicon substrates the direction of the ridges is arbitrary, but on films deposited on hydrogen-terminated Si(100) the ridges are oriented parallel to the < 110 > direct......Films of aluminum deposited onto Si(100) substrates show a surface structure of parallel ridges. On films deposited on oxidized silicon substrates the direction of the ridges is arbitrary, but on films deposited on hydrogen-terminated Si(100) the ridges are oriented parallel to the ... > directions on the silicon substrate. The ridge structure appears when the film thickness is above 500 nm, and increasing the film thickness makes the structure more distinct. Anodic oxidation enhances the structure even further. X-ray diffraction indicates that grains in the film have mostly (110) facets...

  16. Growth of porous type anodic oxide films at micro-areas on aluminum exposed by laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Kikuchi, Tatsuya [Graduate School of Engineering, Hokkaido University, N13-W8, Kita-Ku, Sapporo 060-8628 (Japan)], E-mail: kiku@eng.hokudai.ac.jp; Sakairi, Masatoshi [Graduate School of Engineering, Hokkaido University, N13-W8, Kita-Ku, Sapporo 060-8628 (Japan); Takahashi, Hideaki [Asahikawa National College of Technology, Syunkohdai, 2-2, 1-6, Asahikawa 071-8142 (Japan)

    2009-11-30

    Aluminum covered with pore-sealed anodic oxide films was irradiated with a pulsed Nd-YAG laser to remove the oxide film at micro-areas. The specimen was re-anodized for long periods to examine the growth of porous anodic oxide films at the area where substrate had been exposed by measuring current variations and morphological changes in the oxide during the re-anodizing. The chemical dissolution resistance of the pore-sealed anodic oxide films in an oxalic acid solution was also examined by measuring time-variations in rest potentials during immersion. The resistance to chemical dissolution of the oxide film became higher with increasing pore-sealing time and showed higher values at lower solution temperatures. During potentiostatic re-anodizing at five 35-{mu}m wide and 4-mm long lines for 72 h after the film was removed the measured current was found to increase linearly with time. Semicircular columnar-shaped porous type anodic oxide was found to form during the re-anodizing at the laser-irradiated area, and was found to grow radially, thus resulting in an increase in the diameter. After long re-anodizing, the central and top parts of the oxide protruded along the longitudinal direction of the laser-irradiated area. The volume expansion during re-anodizing resulted in the formation of cracks, parallel to the lines, in the oxide film formed during the first anodizing.

  17. Photoluminescence emission of nanoporous anodic aluminum oxide films prepared in phosphoric acid

    Science.gov (United States)

    2012-01-01

    The photoluminescence emission of nanoporous anodic aluminum oxide films formed in phosphoric acid is studied in order to explore their defect-based subband electronic structure. Different excitation wavelengths are used to identify most of the details of the subband states. The films are produced under different anodizing conditions to optimize their emission in the visible range. Scanning electron microscopy investigations confirm pore formation in the produced layers. Gaussian analysis of the emission data indicates that subband states change with anodizing parameters, and various point defects can be formed both in the bulk and on the surface of these nanoporous layers during anodizing. PMID:23272786

  18. High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method

    Science.gov (United States)

    Lin, Yung-Hao; Lee, Ching-Ting

    2017-08-01

    High-quality indium gallium zinc aluminum oxide (IGZAO) thin films with various Al contents have been deposited using the vapor cooling condensation method. The electron mobility of the IGZAO films was improved by 89.4% on adding Al cation to IGZO film. The change in the electron concentration and mobility of the IGZAO films was 7.3% and 7.0%, respectively, when the temperature was changed from 300 K to 225 K. These experimental results confirm the high performance and stability of the IGZAO films. The performance stability mechanisms of IGZAO thin-film transistors (TFTs) were investigated in comparison with IGZO TFTs.

  19. A study of hydrogen permeation in aluminum alloy treated by various oxidation processes

    International Nuclear Information System (INIS)

    Song Wenhai; Long Bin

    1997-01-01

    A set of oxide coatings was formed on the surface of an Al alloy (wt%: Fe, 0.24; Si, 1.16; Cu, 0.05-0.2; Zn, 0.1; Al, residual) by means of various oxidation processes. The hydrogen permeability through the aluminum alloy and its coating materials was determined by a vapor phase permeation technique at temperatures ranging from 400 to 500 C using high-purity H 2 (99.9999%) gas with an upstream hydrogen pressure of 10 4 -10 5 Pa. The experimental results show that the hydrogen permeability through aluminum oxide coating is 100-2000 times lower than that through the aluminum alloy substrate. This means that the aluminum oxide is a significant hydrogen permeation barrier. A high hydrogen permeation resistance was observed in an oxide layer prefilmed in 200 C water, while an anodized aluminum oxide film had a less obstructive effect, possibly caused by the porous structure of the anodic oxide. The hydrogen permeability through films of aluminum oxide was not a simple function of the aluminum-oxide phase configuration. (orig.)

  20. Nitrogen bonding in aluminum oxynitride films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Paul W., E-mail: pwang@bradley.edu [Department of Physics, Bradley University, 1501 W. Bradley Ave., Peoria, IL 61625 (United States); Hsu, Jin-Cherng [Department of Physics, Fu Jen Catholic University, Hsinchuang, Taipei Hsien 24205, Taiwan (China); Lin, Yung-Hsin; Chen, Huang-Lu [Graduate Institute of Applied Science and Engineering, Fu Jen Catholic University, Hsinchuang, Taipei Hsien 24205, Taiwan (China)

    2010-04-15

    Assignment of oxidation states of N{sub 1s} in XPS spectra of aluminum oxynitride by curve fitting is difficult. The XPS curve fitting was previously discussed in the paper published in J. Non-Cryst. Solids, 224 (1998) 31, in which O{sub 1s} photoelectrons from GeO{sub 2} glass were used to illustrate how to fit the XPS spectra. Three different ways were pointed out to eliminate the ambiguity caused by curve fitting such as comparing the data to data from standard samples, investigating the continuous surface modifications caused by slowly sputtering the surface, and monitoring the continuous surface modifications due to gradual increases in surface species under heating, cooling, or irradiation. Our recent work in aluminum oxynitride films provides another example of how to fit the XPS spectra of N{sub 1s} by three different oxidation states of N{sup +}, N{sup 2+}, and N{sup 3+}, by comparison of the measured data to data from previously published results, and by the gradual changes of spectra as functions of the oxygen contents in the films. Three oxidation states in different nitrogen bonding in the aluminum oxynitride, AlO{sub 2}N, Al{sub 2}O{sub 5}N{sub 2}, and AlO{sub 3}N, were clearly deduced.

  1. An anode with aluminum doped on zinc oxide thin films for organic light emitting devices

    International Nuclear Information System (INIS)

    Xu Denghui; Deng Zhenbo; Xu Ying; Xiao Jing; Liang Chunjun; Pei Zhiliang; Sun Chao

    2005-01-01

    Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150-bar o C in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt% in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was 4x10 -4 Ωcm and the average transmission in the visible range 400-700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm 2

  2. Aluminum oxide films deposited in low pressure conditions by reactive pulsed dc magnetron sputtering

    CERN Document Server

    Seino, T

    2002-01-01

    The reactive pulsed dc sputtering technique is widely used for the deposition of oxide films. The operating pressure for sputtering is commonly above 0.13 Pa. In this study, however, aluminum oxide (alumina) films were deposited at operating pressures from 0.06 to 0.4 Pa using a sputtering system equipped with a scanning magnetron cathode and a pulsed dc power supply. The pulsed dc power was found to be useful not only to reduce arcing, but also to sustain the discharge at low pressure. The electrical breakdown field, intrinsic stress, O/Al ratio, refractive index, and surface roughness were investigated. Both a low intrinsic stress and an O/Al ratio around the stoichiometry were required to get the film having a high breakdown field. A low operating pressure of 0.1 Pa was found to provide the necessary stress and O/Al ratio targets. A 50-nm-thick alumina film having a maximum breakdown field of 7.4 MV/cm was obtained.

  3. Effects of Alclad Layer and Anodizing Time on Sulfuric Acid Anodizing and Film Properties of 2E12 Aluminum Alloy

    Directory of Open Access Journals (Sweden)

    CHEN Gao-hong

    2017-07-01

    Full Text Available Alclad and unclad 2E12 aerospace aluminum alloy were treated by sulfuric acid anodic oxidation. The effects of alclad layer and anodizing time on the anodization behaviour and corrosion resistance of anodic oxide layer on 2E12 aluminum alloy were studied. Surface and cross-section morphology of anodic oxide films were observed by scanning electron microscopy. The electrochemical properties of anodic oxide films were analyzed by potentiodynamic polarization curve and electrochemical impedance spectroscopy. The results show that the protective anodic oxide layers are formed on alclad and unclad 2E12 aluminum alloy. The film thickness increases with anodizing time extending. The copper rich second phase particles lead to more cavity defects and even micro cracks on anodic oxide films of unclad 2E12 aluminum alloy. The anodic oxide films on alclad 2E12 aluminum alloy are thicker and have fewer cavity defects, resulting in better corrosion resistance. The films obtained after 30min and 45min anodic oxidation treatment exhibit lower corrosion current and higher impedance of the porous layer than other anodizing time.

  4. Damp heat stability and annealing behavior of aluminum doped zinc oxide films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Tohsophon, T.; Huepkes, J.; Calnan, S.; Reetz, W.; Rech, B.; Beyer, W.; Sirikulrat, N.

    2006-01-01

    The damp heat stability and subsequent vacuum annealing behavior of aluminum doped zinc oxide (AZO) films was investigated using Hall effect measurements, X-ray diffraction (XRD) and optical spectrometry techniques. The AZO films were deposited on glass or silicon wafers using reactive and non-reactive magnetron sputtering from metallic and ceramic targets, respectively. Additionally, we characterized surface textured AZO films, which are used as light scattering transparent conductive oxide (TCO) in silicon thin film solar cells. For all films a degradation of the electrical film properties was found after the damp heat treatment. For thick compact films, with large grain size, only a small increase in the electrical resistivity was observed, whereas less compact films prepared at high deposition pressures or very thin films (< 300 nm) showed an increase in resistivity by up to a factor of three already after 300 h. The conductivity degradation during damp heat treatment could be largely reversed by annealing in vacuum. However, annealing temperatures of at least 150 deg. C were required. Possible mechanisms explaining the experimental results are discussed

  5. Two-Step Cycle for Producing Multiple Anodic Aluminum Oxide (AAO) Films with Increasing Long-Range Order.

    Science.gov (United States)

    Choudhary, Eric; Szalai, Veronika

    2016-01-01

    Nanoporous anodic aluminum oxide (AAO) membranes are being used for an increasing number of applications. However, the original two-step anodization method in which the first anodization is sacrificial to pre-pattern the second is still widely used to produce them. This method provides relatively low throughput and material utilization as half of the films are discarded. An alternative scheme that relies on alternating anodization and cathodic delamination is demonstrated that allows for the fabrication of several AAO films with only one sacrificial layer thus greatly improving total aluminum to alumina yield. The thickness for which the cathodic delamination performs best to yield full, unbroken AAO sheets is around 85 μm. Additionally, an image analysis method is used to quantify the degree of long-range ordering of the unit cells in the AAO films which was found to increase with each successive iteration of the fabrication cycle.

  6. Nanoscale aluminum concaves for light-trapping in organic thin-films

    DEFF Research Database (Denmark)

    Goszczak, Arkadiusz Jaroslaw; Adam, Jost; Cielecki, Pawel Piotr

    2016-01-01

    Anodic aluminum oxide (AAO) templates, fabricated from oxalic acid and phosphoric acid, lead to non-periodic nanoscale concave structures in their underlying aluminum layer, which are investigated for their field-enhancement properties by applying a thin-film polymer coating based laser ablation...

  7. Plasma diagnostics during magnetron sputtering of aluminum doped zinc oxide

    DEFF Research Database (Denmark)

    Stamate, Eugen; Crovetto, Andrea; Sanna, Simone

    2016-01-01

    Plasma parameters during magnetron sputtering of aluminum-doped zinc oxide are investigated with optical emission spectroscopy, electrostatic probes and mass spectrometry with the aim of understanding the role of negative ions of oxygen during the film growth and improving the uniformity of the f......Plasma parameters during magnetron sputtering of aluminum-doped zinc oxide are investigated with optical emission spectroscopy, electrostatic probes and mass spectrometry with the aim of understanding the role of negative ions of oxygen during the film growth and improving the uniformity...

  8. Evolution of the thickness of the aluminum oxide film due to the pH of the cooling water and surface temperature of the fuel elements clad of a nuclear reactor

    International Nuclear Information System (INIS)

    Babiche, Ivan

    2013-01-01

    This paper describes the mechanism of growth of a film of aluminum oxide on an alloy of the same material, which serves as a protective surface being the constituent material of the RP-10 nuclear reactor fuel elements clads. The most influential parameters on the growth of this film are: the pH of the cooling water and the clad surface temperature of the fuel element. For this study, a mathematical model relating the evolution of the aluminum oxide layer thickness over the time, according to the same oxide film using a power law is used. It is concluded that the time of irradiation, the heat flux at the surface of the aluminum material, the speed of the coolant, the thermal conductivity of the oxide, the initial thickness of the oxide layer and the solubility of the protective oxide are parameters affecting in the rate and film formation. (author).

  9. Optoelectronic properties of expanding thermal plasma deposited textured zinc oxide : effect of aluminum doping

    NARCIS (Netherlands)

    Groenen, R.; Kieft, E.R.; Linden, J.L.; Sanden, van de M.C.M.

    2006-01-01

    Aluminum-doped zinc oxide films exhibiting a rough surface morphol. are deposited on glass substrates utilizing expanding thermal plasma. Spectroscopic ellipsometry is used to evaluate optical and electronic film properties. The presence of aluminum donors in doped films is confirmed by a shift in

  10. Fabrication of Polymeric Antireflection Film Manufactured by Anodic Aluminum Oxide Template on Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Jenn-Kai Tsai

    2017-03-01

    Full Text Available In this study, high energy conversion efficient dye-sensitized solar cells (DSSCs were successfully fabricated by attaching a double anti-reflection (AR layer, which is composed of a subwavelength moth-eye structured polymethyl methacrylate (PMMA film and a polydimethylsiloxane (PDMS film. An efficiency of up to 6.79% was achieved. The moth-eye structured PMMA film was fabricated by using an anodic aluminum oxide (AAO template which is simple, low-cost and scalable. The nano-pattern of the AAO template was precisely reproduced onto the PMMA film. The photoanode was composed of Titanium dioxide (TiO2 nanoparticles (NPs with a diameter of 25 nm deposited on the fluorine-doped tin oxide (FTO glass substrate and the sensitizer N3. The double AR layer was proved to effectively improve the short-circuit current density (JSC and conversion efficiency from 14.77 to 15.79 mA/cm2 and from 6.26% to 6.79%, respectively.

  11. The effect of Bi3+ and Li+ co-doping on the luminescence characteristics of Eu3+-doped aluminum oxide films

    International Nuclear Information System (INIS)

    Padilla-Rosales, I.; Martinez-Martinez, R.; Cabañas, G.; Falcony, C.

    2015-01-01

    The incorporation of Bi 3+ and Li + as co-dopants in Eu 3+ -doped aluminum oxide films deposited by the ultrasonic spray pyrolysis technique and its effect on the luminescence characteristics of this material are described. Both Bi 3+ and Li + do not introduce new luminescence features but affect the luminescence intensity of the Eu 3+ related emission spectra as well as the excitation spectra. The introduction of Bi 3+ generates localized states in the aluminum oxide host that result in a quenching of the luminescence intensity, while Li + and Bi 3+ co-doping increase the luminescence intensity of these films. - Highlights: • Li and Bi co-doping increase the luminescence. • Bi creates localized states in the Al 2 O 3 host. • Li was incorporated as a co-activator

  12. Structural and optical properties of DC reactive magnetron sputtered zinc aluminum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, B. Rajesh, E-mail: rajphyind@gmail.com [Department of Physics, GITAM Institute of Technology, GITAM University, Visakhapatnam - 530 045, A.P. (India); Rao, T. Subba, E-mail: thotasubbarao6@gmail.com [Department of Physics, Sri Krishnadevaraya University, Anantapuramu - 515 003, A.P. (India)

    2014-10-15

    Highly transparent conductive Zinc Aluminum Oxide (ZAO) thin films have been deposited on glass substrates using DC reactive magnetron sputtering method. The thin films were deposited at 200 °C and post-deposition annealing from 15 to 90 min. XRD patterns of ZAO films exhibit only (0 0 2) diffraction peak, indicating that they have c-axis preferred orientation perpendicular to the substrate. Scanning electron microscopy (SEM) is used to study the surface morphology of the films. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 - 26 nm. The minimum resistivity of 1.74 × 10{sup −4} Ω cm and an average transmittance of 92% are obtained for the thin film post annealed for 30 min. The optical band gap of ZAO thin films increased from 3.49 to 3.60 eV with the increase of annealing time due to Burstein-Moss effect. The optical constants refractive index (n) and extinction coefficient (k) were also determined from the optical transmission spectra.

  13. Comparative study of zinc oxide and aluminum doped zinc oxide transparent thin films grown by direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Suchea, M.; Christoulakis, S.; Katsarakis, N.; Kitsopoulos, T.; Kiriakidis, G.

    2007-01-01

    Pure and aluminum (Al) doped zinc oxide (ZnO and ZAO) thin films have been grown using direct current (dc) magnetron sputtering from pure metallic Zn and ceramic ZnO targets, as well as from Al-doped metallic ZnAl2at.% and ceramic ZnAl2at.%O targets at room temperature (RT). The effects of target composition on the film's surface topology, crystallinity, and optical transmission have been investigated for various oxygen partial pressures in the sputtering atmosphere. It has been shown that Al-doped ZnO films sputtered from either metallic or ceramic targets exhibit different surface morphology than the undoped ZnO films, while their preferential crystalline growth orientation revealed by X-ray diffraction remains always the (002). More significantly, Al-doping leads to a larger increase of the optical transmission and energy gap (E g ) of the metallic than of the ceramic target prepared films

  14. Low temperature-pyrosol-deposition of aluminum-doped zinc oxide thin films for transparent conducting contacts

    Energy Technology Data Exchange (ETDEWEB)

    Rivera, M.J. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico); Ramírez, E.B. [Universidad Autónoma de la Ciudad de México, Calle Prolongación San Isidro Núm. 151, Col. San Lorenzo Tezonco, Iztapalapa, 09790 México, D.F. (Mexico); Juárez, B.; González, J.; García-León, J.M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico); Escobar-Alarcón, L. [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, México, D.F. 11801 (Mexico); Alonso, J.C., E-mail: alonso@unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico)

    2016-04-30

    Aluminum doped-zinc oxide (ZnO:Al) thin films with thickness ~ 1000 nm have been deposited by the ultrasonic spray pyrolysis technique using low substrate temperatures in the range from 285 to 360 °C. The electrical and optical properties of the ZnO:Al (AZO) films were investigated by Uv–vis spectroscopy and Hall effect measurements. The crystallinity and morphology of the films were analyzed using X-ray diffraction (XRD), atomic force microscopy (AFM), and high resolution scanning electron microcopy (SEM). XRD results reveal that all the films are nanocrystalline with a hexagonal wurtzite structure with a preferential orientation in the (002) plane. The size of the grains calculated from Scherrer's formula was in the range from 28 to 35 nm. AFM and SEM analysis reveals that the grains form round and hexagonal shaped aggregates at high deposition temperatures and larger rice shaped aggregates at low temperatures. All the films have a high optical transparency (~ 82%). According to the Hall measurements the AZO films deposited at 360 and 340 °C had resistivities of 2.2 × 10{sup −3}–4.3 × 10{sup −3} Ω cm, respectively. These films were n-type and had carrier concentrations and mobilities of 3.71–2.54 × 10{sup 20} cm{sup −3} and 7.4–5.7 cm{sup 2}/V s, respectively. The figure of merit of these films as transparent conductors was in the range of 2.6 × 10{sup −2} Ω{sup −1}–4.1 × 10{sup −2} Ω{sup −1}. Films deposited at 300 °C and 285 °C, had much higher resistivities. Based on the thermogravimetric analysis of the individual precursors used for film deposition, we speculate on possible film growing mechanisms that can explain the composition and electrical properties of films deposited under the two different ranges of temperatures. - Highlights: • Aluminum doped zinc oxide thin films were deposited at low temperatures by pyrosol. • Low resistivity was achieved from 340 °C substrate temperature. • All films deposited

  15. Synthesis of oxide-free aluminum nanoparticles for application to conductive film

    Science.gov (United States)

    Jong Lee, Yung; Lee, Changsoo; Lee, Hyuck Mo

    2018-02-01

    Aluminum nanoparticles are considered promising as alternatives to conventional ink materials, replacing silver and copper nanoparticles, due to their extremely low cost and low melting temperature. However, a serious obstacle to realizing their use as conductive ink materials is the oxidation of aluminum. In this research, we synthesized the oxide-free aluminum nanoparticles using catalytic decomposition and an oleic acid coating method, and these materials were applied to conductive ink for the first time. The injection time of oleic acid determines the size of the aluminum nanoparticles by forming a self-assembled monolayer on the nanoparticles instead of allowing the formation of an oxide phase. Fabricated nanoparticles were analyzed by transmission electron microscopy and x-ray photoelectron spectroscopy to verify their structural and chemical composition. In addition, conductive inks made of these nanoparticles exhibit electrical properties when they are sintered at over 300 °C in a reducing atmosphere. This result shows that aluminum nanoparticles can be used as an alternative conductive material in printed electronics and can solve the cost issues associated with noble metals.

  16. Evolution of insoluble eutectic Si particles in anodic oxidation films during adipic-sulfuric acid anodizing processes of ZL114A aluminum alloys

    Science.gov (United States)

    Hua, Lei; Liu, Jian-hua; Li, Song-mei; Yu, Mei; Wang, Lei; Cui, Yong-xin

    2015-03-01

    The effects of insoluble eutectic Si particles on the growth of anodic oxide films on ZL114A aluminum alloy substrates were investigated by optical microscopy (OM) and scanning electron microscopy (SEM). The anodic oxidation was performed at 25°C and a constant voltage of 15 V in a solution containing 50 g/L sulfuric acid and 10 g/L adipic acid. The thickness of the formed anodic oxidation film was approximately 7.13 μm. The interpore distance and the diameters of the major pores in the porous layer of the film were within the approximate ranges of 10-20 nm and 5-10 nm, respectively. Insoluble eutectic Si particles strongly influenced the morphology of the anodic oxidation films. The anodic oxidation films exhibited minimal defects and a uniform thickness on the ZL114A substrates; in contrast, when the front of the oxide oxidation films encountered eutectic Si particles, defects such as pits and non-uniform thickness were observed, and pits were observed in the films.

  17. Aluminum Oxide Formation On Fecral Catalyst Support By Electro-Chemical Coating

    Directory of Open Access Journals (Sweden)

    Yang H.S.

    2015-06-01

    Full Text Available FeCrAl is comprised essentially of Fe, Cr, Al and generally considered as metallic substrates for catalyst support because of its advantage in the high-temperature corrosion resistance, high mechanical strength, and ductility. Oxidation film and its adhesion on FeCrAl surface with aluminum are important for catalyst life. Therefore various appropriate surface treatments such as thermal oxidation, Sol, PVD, CVD has studied. In this research, PEO (plasma electrolytic oxidation process was applied to form the aluminum oxide on FeCrAl surface, and the formed oxide particle according to process conditions such as electric energy and oxidation time were investigated. Microstructure and aluminum oxide particle on FeCrAl surface after PEO process was observed by FE-SEM and EDS with element mapping analysis. The study presents possibility of aluminum oxide formation by electro-chemical coating process without any pretreatment of FeCrAl.

  18. Nanopatterning of Crystalline Silicon Using Anodized Aluminum Oxide Templates for Photovoltaics

    Science.gov (United States)

    Chao, Tsu-An

    A novel thin film anodized aluminum oxide templating process was developed and applied to make nanopatterns on crystalline silicon to enhance the optical properties of silicon. The thin film anodized aluminum oxide was created to improve the conventional thick aluminum templating method with the aim for potential large scale fabrication. A unique two-step anodizing method was introduced to create high quality nanopatterns and it was demonstrated that this process is superior over the original one-step approach. Optical characterization of the nanopatterned silicon showed up to 10% reduction in reflection in the short wavelength range. Scanning electron microscopy was also used to analyze the nanopatterned surface structure and it was found that interpore spacing and pore density can be tuned by changing the anodizing potential.

  19. Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer

    Science.gov (United States)

    Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao; Lee, Ching-Ting

    2018-02-01

    To study the self-heating effect, aluminum oxide (Al2O3) barrier layers of various thicknesses have been inserted between the channel layer and insulator layer in bottom-gate-type indium gallium zinc aluminum oxide (IGZAO) thin-film transistors (TFTs). Each IGZAO channel layer was deposited on indium tin oxide (ITO)-coated glass substrate by using a magnetron radiofrequency cosputtering system with dual targets composed of indium gallium zinc oxide (IGZO) and Al. The 3 s orbital of Al cation provided an extra transport pathway and widened the conduction-band bottom, thus increasing the electron mobility of the IGZAO films. The Al-O bonds were able to sustain the oxygen stability of the IGZAO films. The self-heating behavior of the resulting IGZAO TFTs was studied by Hall measurements on the IGZAO films as well as the electrical performance of the IGZAO TFTs with Al2O3 barrier layers of various thicknesses at different temperatures. IGZAO TFTs with 50-nm-thick Al2O3 barrier layer were stressed by positive gate bias stress (PGBS, at gate-source voltage V GS = 5 V and drain-source voltage V DS = 0 V); at V GS = 5 V and V DS = 10 V, the threshold voltage shifts were 0.04 V and 0.2 V, respectively, much smaller than for the other IGZAO TFTs without Al2O3 barrier layer, which shifted by 0.2 V and 1.0 V when stressed under the same conditions.

  20. Fabrication of high quality ordered porous anodic aluminum oxide templates

    International Nuclear Information System (INIS)

    Liu Kai; Du Kai; Chen Jing; Zhou Lan; Zhang Lin; Fang Yu

    2010-01-01

    The preparation of porous anodic aluminum oxide (AAO) templates has been studied with oxalic acid as electrolyte. The morphology of the as-prepared templates has been characterized by field-emission scanning electron microscope (FE-SEM). The pores distributed orderly and uniformly with the diameter ranging from 40 nm to 70 nm. The experimental results indicate that electrolyte concentration, oxidation voltage, oxidation temperature and oxidation time affect the structure of AAO templates. Ordered porous AAO templates can be derived without annealing and finishing. X-ray diffraction (XRD) analysis indicates that the aluminum oxide film is mainly composed of amorphous Al 2 O 3 . (authors)

  1. Aluminum-Oxide Temperatures on the Mark VB, VE, VR, 15, and Mark 25 Assemblies

    International Nuclear Information System (INIS)

    Aleman, S.E.

    2001-01-01

    The task was to compute the maximum aluminum-oxide and oxide-coolant temperatures of assemblies cladded in 99+ percent aluminum. The assemblies considered were the Mark VB, VE, V5, 15 and 25. These assemblies consist of nested slug columns with individual uranium slugs cladded in aluminum cans. The CREDIT code was modified to calculate the oxide film thickness and the aluminum-oxide temperature at each axial increment. This information in this report will be used to evaluate the potential for cladding corrosion of the Mark 25 assembly

  2. Electrically conductive aluminum oxide thin film used as cobalt catalyst-support layer in vertically aligned carbon nanotube growth

    International Nuclear Information System (INIS)

    Azam, Mohd Asyadi; Ismail, Syahriza; Mohamad, Noraiham; Isomura, Kazuki; Shimoda, Tatsuya

    2015-01-01

    This paper will present the unique characteristics of aluminum oxide (Al–O) and cobalt catalyst included in aligned carbon nanotube (CNT) electrode system of energy storage device, namely electrochemical capacitor. Electrical conductivity and nanostructure of the thermally oxidized Al–O used as catalyst-support layer in vertically grown single-walled CNTs were studied. Al–O films were characterized by means of current–voltage measurement and high resolution transmission electron microscopy analysis. The Al–O support layer was found to be conductive, with a relatively low resistance and, approximately 20 nm film thickness of Al–O is suggested to be too thin to form insulating barrier. The scanning TEM—annular dark field analysis confirmed that the nanosized cobalt catalyst particles distributed on Al–O surfaces and also embedded inside the Al–O film structure. (paper)

  3. The thickness of native oxides on aluminum alloys and single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Evertsson, J., E-mail: jonas.evertsson@sljus.lu.se [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Bertram, F. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Zhang, F. [KTH Royal Institute of Technology, Department of Chemistry, Division of Surface and Corrosion Science, Drottning Kristinas Vg 51, 100 44 Stockholm (Sweden); Rullik, L.; Merte, L.R.; Shipilin, M. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Soldemo, M.; Ahmadi, S. [KTH Royal Institute of Technology, ICT, Material Physics, 16440 Kista (Sweden); Vinogradov, N.; Carlà, F. [ESRF, B.P. 220, 38043 Grenoble (France); Weissenrieder, J.; Göthelid, M. [KTH Royal Institute of Technology, ICT, Material Physics, 16440 Kista (Sweden); Pan, J. [KTH Royal Institute of Technology, Department of Chemistry, Division of Surface and Corrosion Science, Drottning Kristinas Vg 51, 100 44 Stockholm (Sweden); Mikkelsen, A. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Nilsson, J.-O. [Sapa Technology, Kanalgatan 1, 612 31 Finspång (Sweden); Lundgren, E. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden)

    2015-09-15

    Highlights: • We have determined the native oxide film thickness on several Al samples. • The results obtained from XRR and XPS show excellent agreement. • The results obtained from EIS show consistently thinner oxide films. • The oxides on the alloys are thicker than the oxides on the single crystals. - Abstract: We present results from measurements of the native oxide film thickness on four different industrial aluminum alloys and three different aluminum single crystals. The thicknesses were determined using X-ray reflectivity, X-ray photoelectron spectroscopy, and electrochemical impedance spectroscopy. In addition, atomic force microscopy was used for micro-structural studies of the oxide surfaces. The reflectivity measurements were performed in ultra-high vacuum, vacuum, ambient, nitrogen and liquid water conditions. The results obtained using X-ray reflectivity and X-ray photoelectron spectroscopy demonstrate good agreement. However, the oxide thicknesses determined from the electrochemical impedance spectroscopy show a larger discrepancy from the above two methods. In the present contribution the reasons for this discrepancy are discussed. We also address the effect of the substrate type and the presence of water on the resultant oxide thickness.

  4. Growth behavior of anodic oxide formed by aluminum anodizing in glutaric and its derivative acid electrolytes

    Science.gov (United States)

    Nakajima, Daiki; Kikuchi, Tatsuya; Natsui, Shungo; Suzuki, Ryosuke O.

    2014-12-01

    The growth behavior of anodic oxide films formed via anodizing in glutaric and its derivative acid solutions was investigated based on the acid dissociation constants of electrolytes. High-purity aluminum foils were anodized in glutaric, ketoglutaric, and acetonedicarboxylic acid solutions under various electrochemical conditions. A thin barrier anodic oxide film grew uniformly on the aluminum substrate by glutaric acid anodizing, and further anodizing caused the film to breakdown due to a high electric field. In contrast, an anodic porous alumina film with a submicrometer-scale cell diameter was successfully formed by ketoglutaric acid anodizing at 293 K. However, the increase and decrease in the temperature of the ketoglutaric acid resulted in non-uniform oxide growth and localized pitting corrosion of the aluminum substrate. An anodic porous alumina film could also be fabricated by acetonedicarboxylic acid anodizing due to the relatively low dissociation constants associated with the acid. Acid dissociation constants are an important factor for the fabrication of anodic porous alumina films.

  5. Electrochemical fabrication of CdS/Co nanowire arrays in porous aluminum oxide templates

    CERN Document Server

    Yoon, C H

    2002-01-01

    A procedure for preparing semiconductor/metal nanowire arrays is described, based on a template method which entails electrochemical deposition into nanometer-wide parallel pores of anodic aluminum oxide films on aluminum. Aligned CdS/Co heterostructured nanowires have been prepared by ac electrodeposition in the anodic aluminum oxide templates. By varying the preparation conditions, a variety of CdS/Co nanowire arrays were fabricated, whose dimensional properties could be adjusted.

  6. Microhardness of anodic aluminum oxide formed in an alkaline electrolyte

    Science.gov (United States)

    Kanygina, O. N.; Filyak, M. M.

    2017-04-01

    The microhardness of anodic aluminum oxide formed by anodizing of aluminum sheet in electrolyte on the basis of sodium hydroxide has been determined experimentally. The microhardness of the hard film/soft substrate system has been estimated by three approaches: indentation geometry (length of diagonals) in film surfaces, the sum of the hardnesses of the film and the surface with allowance for the indentation surface area and geometry, and with allowance for the indentation depth. It is demonstrated that the approach accounting for the indentation depth makes it possible to eliminate the influence of the substrate. It is established that the microhardness of the films formed in alkaline electrolytes is comparable with that formed in acid electrolytes.

  7. Nanocylindrical confinement imparts highest structural order in molecular self-assembly of organophosphonates on aluminum oxide.

    Science.gov (United States)

    Pathak, Anshuma; Bora, Achyut; Braunschweig, Björn; Meltzer, Christian; Yan, Hongdan; Lemmens, Peter; Daum, Winfried; Schwartz, Jeffrey; Tornow, Marc

    2017-05-18

    We report the impact of geometrical constraint on intramolecular interactions in self-assembled monolayers (SAMs) of alkylphosphonates grown on anodically oxidized aluminum (AAO). Molecular order in these films was determined by sum frequency generation (SFG) spectroscopy, a more sensitive measure of order than infrared absorption spectroscopy. Using SFG we show that films grown on AAO are, within detection limits, nearly perfectly ordered in an all-trans alkyl chain configuration. In marked contrast, films formed on planar, plasma-oxidized aluminum oxide or α-Al 2 O 3 (0001) are replete with gauche defects. We attribute these differences to the nanocylindrical structure of AAO, which enforces molecular confinement.

  8. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    Directory of Open Access Journals (Sweden)

    M. Morales-Masis

    2014-09-01

    Full Text Available Improving the conductivity of earth-abundant transparent conductive oxides (TCOs remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H2-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H2-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  9. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Masis, M., E-mail: monica.moralesmasis@epfl.ch; Ding, L.; Dauzou, F. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Jeangros, Q. [Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Hessler-Wyser, A. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Nicolay, S. [Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland); Ballif, C. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland)

    2014-09-01

    Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  10. Electrodeposited Reduced Graphene Oxide Films on Stainless Steel, Copper, and Aluminum for Corrosion Protection Enhancement

    Directory of Open Access Journals (Sweden)

    Abdulkareem Mohammed Ali Al-Sammarraie

    2017-01-01

    Full Text Available The enhancement of corrosion protection of metals and alloys by coating with simple, low cost, and highly adhered layer is still a main goal of many workers. In this research graphite flakes converted into graphene oxide using modified Hammers method and then reduced graphene oxide was electrodeposited on stainless steel 316, copper, and aluminum for corrosion protection application in seawater at four temperatures, namely, 20, 30, 40, and 50°C. All corrosion measurements, kinetics, and thermodynamics parameters were established from Tafel plots using three-electrode potentiostat. The deposited films were examined by FTIR, Raman, XRD, SEM, and AFM techniques; they revealed high percentages of conversion to the few layers of graphene with confirmed defects.

  11. Influence of Ag thickness of aluminum-doped ZnO/Ag/aluminum-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Hung-Wei, E-mail: hwwu@mail.ksu.edu.tw [Department of Computer and Communication, Kun Shan University, No. 949, Dawan Rd., Yongkang Dist., Tainan City 710, Taiwan (China); Yang, Ru-Yuan [Graduate Institute of Materials Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China); Hsiung, Chin-Min; Chu, Chien-Hsun [Department of Mechanical Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China)

    2012-10-01

    Highly conducting aluminum-doped ZnO (30 nm)/Ag (5-15 nm)/aluminum-doped ZnO (30 nm) multilayer thin films were deposited on glass substrate by rf magnetron sputtering (for top/bottom aluminum-doped ZnO films) and e-beam evaporation (for Ag film). The transmittance is more than 70% for wavelengths above 400 nm with the Ag layer thickness of 10 nm. The resistivity is 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm, which can be decreased to 3.8 Multiplication-Sign 10{sup -5} {Omega}-cm with the increase of the Ag layer thickness to 15 nm. The Haacke figure of merit has been calculated for the films with the best value being 8 Multiplication-Sign 10{sup -3} {Omega}{sup -1}. It was shown that the multilayer thin films have potential for applications in optoelectronics. - Highlights: Black-Right-Pointing-Pointer High-quality Al-doped ZnO (AZO)/Ag/AZO Transparent Conducting Oxide films. Black-Right-Pointing-Pointer AZO films (30 nm) made by RF sputtering; E-beam evaporation for Ag film (5-15 nm). Black-Right-Pointing-Pointer Influence of Ag thickness on optical and electrical properties were analyzed. Black-Right-Pointing-Pointer High quality multilayer film with optimal intermediate Ag layer thickness of 10 nm. Black-Right-Pointing-Pointer 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm resistivity, 91.89% transmittance at 470 nm obtained and reproducible.

  12. Analysis on porous aluminum anodic oxide film formed in Re-OA-H{sub 3}PO{sub 4} solution

    Energy Technology Data Exchange (ETDEWEB)

    Wang, H. [State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, 1954 Huashan Road, Shanghai 200030 (China); Wang, H.W. [State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, 1954 Huashan Road, Shanghai 200030 (China)]. E-mail: hwwang@sjtu.edu.cn

    2006-06-10

    An anodic porous film on aluminum was prepared in a mixed electrolyte of phosphoric acid and organic acid and cerium salt. The growth, morphology and chemical composition of the film were investigated. The results indicate that the growth of porous layers in this solution undergo three stages during anodizing, as in other conventional solution, while the whole growth rate is nonlinear. This electrolyte is sensitive to anodizing temperature, which affects current density in great degree. SEM indicates the surface morphology of film is strongly dependent on temperature and current density and its cross-section has two distinct oxide layers. Al, O and P are found in the film with different distribution in the two layers with EPMA. However, Ce has been detected on the outer surface with EDAX. XPS analysis on the electron binding energy of the component elements show the chemical composition of oxide film surface are Al{sub 2}O{sub 3}, Ce(OH) and some phosphates. The formation mechanics of Ce compound is also deduced.

  13. Effects of a magnetic field on growth of porous alumina films on aluminum

    Energy Technology Data Exchange (ETDEWEB)

    Ispas, Adriana; Bund, Andreas [Technische Universitaet Dresden, Physikalische Chemie und Elektrochemie, 01062 Dresden (Germany); Vrublevsky, Igor, E-mail: vrublevsky@bsuir.edu.b [Belarusian State University of Informatics and Radioelectronics Minsk, Department of Micro and Nanoelectronics, 220013 Minsk (Belarus)

    2010-05-01

    The effects induced by a magnetic field on the oxide film growth on aluminum in sulfuric, oxalic, phosphoric and sulfamic acid, and on current transients during re-anodizing of porous alumina films in the barrier-type electrolyte, were studied. Aluminum films of 100 nm thickness were prepared by thermal evaporation on Si wafer substrates. We could show that the duration of the anodizing process increased by 33% during anodizing in sulfuric acid when a magnetic field was applied (0.7 T), compared to the process without a magnetic field. Interestingly, such a magnetic field effect was not found during anodizing in oxalic and sulfamic acid. The pore intervals were decreased by ca. 17% in oxalic acid. These findings were attributed to variations in electronic properties of the anodic oxide films formed in various electrolytes and interpreted on the basis of the influence of trapped electrons on the mobility of ions migrating during the film growth. The spin dependent tunneling of electrons into the surface layer of the oxide under the magnetic field could be responsible for the shifts of the current transients to lower potentials during re-anodizing of heat-treated oxalic and phosphoric acid alumina films.

  14. Effects of Alclad Layer and Anodizing Time on Sulfuric Acid Anodizing and Film Properties of 2E12 Aluminum Alloy

    OpenAIRE

    CHEN Gao-hong; HU Yuan-sen; YU Mei; LIU Jian-hua; LI Guo-ai

    2017-01-01

    Alclad and unclad 2E12 aerospace aluminum alloy were treated by sulfuric acid anodic oxidation. The effects of alclad layer and anodizing time on the anodization behaviour and corrosion resistance of anodic oxide layer on 2E12 aluminum alloy were studied. Surface and cross-section morphology of anodic oxide films were observed by scanning electron microscopy. The electrochemical properties of anodic oxide films were analyzed by potentiodynamic polarization curve and electrochemical impedance ...

  15. Optical constants of anodic aluminum oxide films formed in oxalic acid solution

    Energy Technology Data Exchange (ETDEWEB)

    Wang Jian [College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070 (China); Wang Chengwei [College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)], E-mail: cwwang@nwnu.edu.cn; Li Yan [College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070 (China); Liu Weimin [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China)

    2008-09-01

    The anodic aluminum oxide (AAO) films with highly ordered nanopore arrays were prepared in oxalic acid solution under different anodizing voltage and time, its surface and cross section appearances were characterized by using field emission scanning electron microscopy, the transmission spectra with the interference fringes were measured at normal incidence over the wavelength range 200 to 2500 nm. Then the modified Swanepoel method was used for the determination of the optical constants and thickness of the free standing AAO films. The results indicate that the refractive index increases with the increase of anodizing voltage and the decrease of anodizing time, which is mainly due to the content of Al{sub 2}O{sub 3} with octahedron increases in the AAO films. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple-DiDomenico model, and the energy dependence of the absorption coefficient can be described using the direct transition model proposed by Tauc. Likewise, the optical energy gap E{sub g} is derived from Tauc's extrapolation, and E{sub g} increases from 4.178 to 4.256 eV with the anodizing voltage, but is weakly dependent on anodizing time. All the results are self-consistent in the paper.

  16. Thermal Effect on the Structural, Electrical, and Optical Properties of In-Line Sputtered Aluminum Doped Zinc Oxide Films Explored with Thermal Desorption Spectroscopy

    Directory of Open Access Journals (Sweden)

    Shang-Chou Chang

    2014-01-01

    Full Text Available This work investigates the thermal effect on the structural, electrical, and optical properties of aluminum doped zinc oxide (AZO films. The AZO films deposited at different temperatures were measured using a thermal desorption system to obtain their corresponding thermal desorption spectroscopy (TDS. In addition to obtaining information of thermal desorption, the measurement of TDS also has the effect of vacuum annealing on the AZO films. The results of measuring TDS imply part of the doped aluminum atoms do not stay at substituted zinc sites in AZO films. The (002 preferential direction of the AZO films in X-ray diffraction spectra shifts to a lower angle after measurement of TDS. The grain size grows and surface becomes denser for all AZO films after measurement of TDS. The carrier concentration, mobility, and average optical transmittance increase while the electrical resistivity decreases for AZO films after measurement of TDS. These results indicate that the AZO films deposited at 200°C are appropriate selections if the AZO films are applied in device fabrication of heat-produced process.

  17. Analysis of chemical dissolution of the barrier layer of porous oxide on aluminum thin films using a re-anodizing technique

    Energy Technology Data Exchange (ETDEWEB)

    Vrublevsky, I. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus)]. E-mail: nil-4-2@bsuir.edu.by; Parkoun, V. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus); Sokol, V. [Department of Microelectronics, Belarusian State University of Informatics and Radioelectronics, 6 Brovka street, Minsk 220013 (Belarus); Schreckenbach, J. [Institut fuer Chemie, Technische Universitaet Chemnitz, Chemnitz D-09107 (Germany)

    2005-09-30

    Chemical dissolution of the barrier layer of porous oxide formed on thin aluminum films (99.9% purity) in the 4% oxalic acid after immersion in 2 mol dm{sup -3} sulphuric acid at 50 deg. C has been studied. The barrier layer thickness before and after dissolution was calculated using a re-anodizing technique. It has been shown that above 57 V the change in the growth mechanism of porous alumina films takes place. As a result, the change in the amount of regions in the barrier oxide with different dissolution rates is observed. The barrier oxide contains two layers at 50 V: the outer layer with the highest dissolution rate and the inner layer with a low dissolution rate. Above 60 V the barrier oxide contains three layers: the outer layer with a high dissolution rate, the middle layer with the highest dissolution rate and the inner layer with a low dissolution rate. We suggest that the formation of the outer layer of barrier oxide with a high dissolution rate is linked with the injection of protons or H{sub 3}O{sup +} ions from the electrolyte into the oxide film at the anodizing voltages above 57 V.

  18. Aluminum-doped zinc oxide thin films grown on various substrates using facing target sputtering system

    Science.gov (United States)

    Kim, Hwa-Min; Lee, Chang Hyun; Shon, Sun Young; Kim, Bong Hwan

    2017-11-01

    Aluminum-doped zinc oxide (AZO) films were fabricated on various substrates, such as glass, polyethylene naphthalate (PEN), and polyethylene terephthalate (PET), at room temperature using a facing target sputtering (FTS) system with hetero ZnO and Al2O3 targets, and their electrical and optical properties were investigated. The AZO film on glass exhibited compressive stress while the films on the plastic substrates showed tensile stress. These stresses negatively affected the crystalline quality of the AZO films, and it is suggested that the poor crystalline quality of the films may be related to the neutral Al-based defect complexes formed in the films; these complexes act as neutral impurity scattering centers. AZO films with good optoelectronic properties could be formed on the glass and plastic substrates by the FTS technique using the hetero targets. The AZO films deposited on the glass, PEN, and PET substrates showed very low resistivities, of 5.0 × 10-4 Ω cm, 7.0 × 10-4 Ω cm, and 7.4 × 10-4 Ω cm, respectively. Further, the figure merit of the AZO film formed on the PEN substrate in the visible range (400-700 nm) was significantly higher than that of the AZO film on PET and similar to that of the AZO film on glass. Finally, the average transmittances of the films in the visible range (400-700 nm) were 83.16% (on glass), 76.3% (on PEN), and 78.16% (on PET).

  19. Structural study of anodic films formed on aluminum in nitric acid electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Yakovleva, N.M.; Anicai, L.; Yakovlev, A.N.; Dima, L.; Khanina, E.Ya.; Buda, M.; Chupakhina, E.A

    2002-09-02

    The paper presents the results of investigations of porous Al anodic films formed in HNO{sub 3} electrolytes carried out by means of electrochemical techniques and X-ray diffraction as well as scanning electron microscopy (SEM). It was assumed that both electrochemical formation of a porous oxide and anodic dissolution of metal take place at Al/oxide interface at the same time. The analysis of short-range order (SRO) parameters for relatively high current density, 1x10{sup 3} A/m{sup 2}, and anodizing time, 10 min, leads to the conclusion that films mainly consist of amorphous alumina with {gamma}'-Al{sub 2}O{sub 3}-like SRO and a small amount ({approx}10%) of amorphous aluminum oxyhydroxide. SEM investigation of the films revealed strong dependence of the surface relief on different applied forming conditions. This marked change in the surface relief is discussed taking into account the relatively complex behavior of Al during anodization in HNO{sub 3} electrolytes, that involves both electrochemical growth and dissolution processes of anodic film associated with an electrochemical dissolution of aluminum substrate.

  20. Structural study of anodic films formed on aluminum in nitric acid electrolyte

    International Nuclear Information System (INIS)

    Yakovleva, N.M.; Anicai, L.; Yakovlev, A.N.; Dima, L.; Khanina, E.Ya.; Buda, M.; Chupakhina, E.A.

    2002-01-01

    The paper presents the results of investigations of porous Al anodic films formed in HNO 3 electrolytes carried out by means of electrochemical techniques and X-ray diffraction as well as scanning electron microscopy (SEM). It was assumed that both electrochemical formation of a porous oxide and anodic dissolution of metal take place at Al/oxide interface at the same time. The analysis of short-range order (SRO) parameters for relatively high current density, 1x10 3 A/m 2 , and anodizing time, 10 min, leads to the conclusion that films mainly consist of amorphous alumina with γ'-Al 2 O 3 -like SRO and a small amount (∼10%) of amorphous aluminum oxyhydroxide. SEM investigation of the films revealed strong dependence of the surface relief on different applied forming conditions. This marked change in the surface relief is discussed taking into account the relatively complex behavior of Al during anodization in HNO 3 electrolytes, that involves both electrochemical growth and dissolution processes of anodic film associated with an electrochemical dissolution of aluminum substrate

  1. Lasing of a Solid-State Active Element Based on Anodized Aluminum Oxide Film Doped with Rhodamine 6G

    Science.gov (United States)

    Shelkovnikov, V. V.; Lyubas, G. A.; Korotaev, S. V.; Kopylova, T. N.; Tel'minov, E. N.; Gadirov, R. M.; Nikonova, E. N.; Nikonov, S. Yu.; Solodova, T. A.; Novikov, V. A.

    2017-04-01

    Spectral-luminescent and lasing characteristics of rhodamine 6G in porous aluminum oxide films anodized under various conditions are investigated. Lasing is obtained without external resonator in the longitudinal scheme under excitation by the second harmonic of Nd3+:YAG-laser radiation. The threshold pump power densities are in the range 3.5-15 MW/cm2 depending on the anodizing conditions. Wherein, the lasing line narrows down from 12 to 5 nm.

  2. BONDING ALUMINUM METALS

    Science.gov (United States)

    Noland, R.A.; Walker, D.E.

    1961-06-13

    A process is given for bonding aluminum to aluminum. Silicon powder is applied to at least one of the two surfaces of the two elements to be bonded, the two elements are assembled and rubbed against each other at room temperature whereby any oxide film is ruptured by the silicon crystals in the interface; thereafter heat and pressure are applied whereby an aluminum-silicon alloy is formed, squeezed out from the interface together with any oxide film, and the elements are bonded.

  3. Nanoscale aluminum dimples for light-trapping in organic thin-films

    DEFF Research Database (Denmark)

    Goszczak, Arkadiusz Jaroslaw; Adam, Jost; Cielecki, Pawel Piotr

    Integration of nanostructures in organic solar cells (OSCs) has been investigated intensively in the past few years as an alternative way for enhancing the power conversion efficiency of the devices. Incorporating structured electrodes in the solar cell architecture holds potential for light...... absorption improvement in the active layer of the devices. A prospective, cheap and large-scale compatible method for structuring the electrodes in OSCs arises by the use of anodic aluminum oxide (AAO) membranes. In the present work, aluminum films of high purity and low roughness are formed via e...

  4. Hydrogen uptake in alumina thin films synthesized from an aluminum plasma stream in an oxygen ambient

    International Nuclear Information System (INIS)

    Schneider, J.M.; Anders, A.; Hjoervarsson, B.; Petrov, I.; Macak, K.; Helmersson, U.; Sundgren, J.

    1999-01-01

    We describe the hydrogen uptake during the synthesis of alumina films from H 2 O present in the high vacuum gas background. The hydrogen concentration in the films was determined by the 1 H( 15 N,αγ) 12 C nuclear resonance reaction. Furthermore, we show the presence of hydrogen ions in the plasma stream by time-of-flight mass spectrometry. The hydrogen content increased in both the film and the plasma stream, as the oxygen partial pressure was increased. On the basis of these measurements and thermodynamic considerations, we suggest that an aluminum oxide hydroxide compound is formed, both on the cathode surface as well as in the film. The large scatter in the data reported in the literature for refractive index and chemical stability of alumina thin films can be explained on the basis of the suggested aluminum oxide hydroxide formation. copyright 1999 American Institute of Physics

  5. Preparation of aluminum doped zinc oxide films with low resistivity and outstanding transparency by a sol–gel method for potential applications in perovskite solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xingyue; Shen, Heping; Zhou, Chen [State Key Laboratory of New Ceramics & Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 10084 (China); Lin, Shiwei [Key Laboratory of Ministry of Education for Advanced Materials in Tropical Island Resources, Hainan University, Haikou 570228 (China); Li, Xin [State Key Laboratory of New Ceramics & Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 10084 (China); Zhao, Xiaochong [State Key Laboratory of New Ceramics & Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 10084 (China); Science and Technology on Surface Physics and Chemistry Laboratory, Mianyang 621907 (China); Deng, Xiangyun [Key Laboratory of Ministry of Education for Advanced Materials in Tropical Island Resources, Hainan University, Haikou 570228 (China); College of Physics and Electronic Information, Tianjin, Normal University, Tianjin 300387 (China); Li, Jianbao [State Key Laboratory of New Ceramics & Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 10084 (China); Key Laboratory of Ministry of Education for Advanced Materials in Tropical Island Resources, Hainan University, Haikou 570228 (China); Lin, Hong [State Key Laboratory of New Ceramics & Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 10084 (China)

    2016-04-30

    Highly transparent and conductive aluminum doped zinc oxide (AZO) films were prepared by sol–gel method on the glass substrates. The effects of doping concentration, annealing temperature and facing direction during annealing on the structural, electrical and optical properties of AZO films were studied by performing a series of characterizations including X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, UV–vis spectrophotometry, four-point probe method and Hall effect measurement system. The results showed that the AZO films were wurtzite crystallized with c-axis preferred orientation. A minimum resistivity of 1.8 × 10{sup −3} Ω cm and a transmittance above 90% were obtained for the film doped with 1.5 at.% aluminum, annealed at 510 °C and faced-down in the oven, which was among the best performance of the currently reported works based on sol–gel process. Moreover, energy level analysis revealed that the AZO film has a work function of 4.3 eV, exhibiting great potential in perovskite solar cell applications. - Highlights: • Highly transparent and conductive AZO films were prepared by sol–gel based process. • Different facing directions during annealing had effects on the carrier mobility. • Less aluminum ions at the grain boundary would favor the carrier transport. • The potential of AZO film in the perovskite solar cell application was discussed.

  6. Synthesis of aluminum oxy-hydroxide nanofibers from porous anodic alumina

    Energy Technology Data Exchange (ETDEWEB)

    Jha, Himendra; Kikuchi, Tatsuya; Sakairi, Masatoshi; Takahashi, Hideaki [Laboratory of Interface Microstructure Analysis (LIMSA), Division of Materials Science and Engineering, Graduate School of Engineering, Hokkaido University, Sapporo 060-8628 (Japan)], E-mail: himendra@eng.hokudai.ac.jp

    2008-10-01

    A novel method for the synthesis of aluminum oxy-hydroxide nanofibers from a porous anodic oxide film of aluminum is demonstrated. In the present method, the porous anodic alumina not only acts as a template, but also serves as the starting material for the synthesis. The porous anodic alumina film is hydrothermally treated for pore-sealing, which forms aluminum oxy-hydroxide inside the pores of the oxide film as well as on the surface of the film. The hydrothermally sealed porous oxide film is immersed in the sodium citrate solution, which selectively etches the porous aluminum oxide from the film, leaving the oxy-hydroxide intact. The method is simple and gives highly uniform aluminum oxy-hydroxide nanofibers. Moreover, the diameter of the nanofibers can be controlled by controlling the pore size of the porous anodic alumina film, which depends on the anodizing conditions. Nanofibers with diameters of about 38-85 nm, having uniform shape and size, were successfully synthesized using the present method.

  7. Synthesis of aluminum oxy-hydroxide nanofibers from porous anodic alumina

    International Nuclear Information System (INIS)

    Jha, Himendra; Kikuchi, Tatsuya; Sakairi, Masatoshi; Takahashi, Hideaki

    2008-01-01

    A novel method for the synthesis of aluminum oxy-hydroxide nanofibers from a porous anodic oxide film of aluminum is demonstrated. In the present method, the porous anodic alumina not only acts as a template, but also serves as the starting material for the synthesis. The porous anodic alumina film is hydrothermally treated for pore-sealing, which forms aluminum oxy-hydroxide inside the pores of the oxide film as well as on the surface of the film. The hydrothermally sealed porous oxide film is immersed in the sodium citrate solution, which selectively etches the porous aluminum oxide from the film, leaving the oxy-hydroxide intact. The method is simple and gives highly uniform aluminum oxy-hydroxide nanofibers. Moreover, the diameter of the nanofibers can be controlled by controlling the pore size of the porous anodic alumina film, which depends on the anodizing conditions. Nanofibers with diameters of about 38-85 nm, having uniform shape and size, were successfully synthesized using the present method

  8. Research progress in formation mechanism of anodizing aluminum oxide

    Science.gov (United States)

    Lv, Yudong

    2017-12-01

    The self-ordering porous anodizing aluminum oxide (AAO) has attracted much attention because of its potential value of application. Valve metals (Al, Ti, Zr etc.) anodic studies have been conducted for more than 80 years, but the mechanism of the formation of hexagonal prismatic cell structure has so far been different. In this paper, the research results of AAO film formation mechanism are reviewed, and the growth models of several AAO films are summarized, including the field-assisted dissolution (FAD), the viscous flow model, the critical current density effect model, the bulk expansion stress model and the steady-state pore growth model and so on. It analyzed the principle of each model and its rationality. This paper will be of great help to reveal the nature of pore formation and self-ordering, and with the hope that through the study of AAO film formation mechanism, the specific effects of various oxidation parameters on AAO film morphology can be obtained.

  9. Optimization of the optical and electrical properties of electron beam evaporated aluminum-doped zinc oxide films for opto-electronic applications

    Science.gov (United States)

    Ali, H. M.; Abd El-Raheem, M. M.; Megahed, N. M.; Mohamed, H. A.

    2006-08-01

    Aluminum-doped zinc oxide (AZO) thin films have been deposited by electron beam evaporation technique on glass substrates. The structural, electrical and optical properties of AZO films have been investigated as a function of annealing temperature. It was observed that the optical properties such as transmittance, reflectance, optical band gap and refractive index of AZO films were strongly affected by annealing temperature. The transmittance values of 84% in the visible region and 97% in the NIR region were obtained for AZO film annealed at 475 °C. The room temperature electrical resistivity of 4.6×10-3 Ω cm has been obtained at the same temperature of annealing. It was found that the calculated refractive index has been affected by the packing density of the thin films, whereas, the high annealing temperature gave rise to improve the homogeneity of the films. The single-oscillator model was used to analyze the optical parameters such as the oscillator and dispersion energies.

  10. A Prediction Study on Oxidation of Aluminum Alloy Cladding of U{sub 3}Si{sub 2}-Al Fuel Plate

    Energy Technology Data Exchange (ETDEWEB)

    Tahk, Y.W.; Lee, B.H.; Oh, J.Y.; Park, J.H.; Yim, J.S. [Research Reactor Design and Engineering Div., Korea Atomic Energy Research Institute, 1045 Daedeokdaero, Yuseong, Daejeon 305-353 (Korea, Republic of)

    2011-07-01

    U{sub 3}Si{sub 2}-Al dispersion fuel with aluminum alloy cladding will be used for the Jordan Research and Training Reactor (JRTR). Aluminum alloy cladding undergoes corrosion at slow rates under operational status. This causes thinning of the cladding walls and impairs heat transfer to the coolant. Predictions of the aluminum oxide thickness of the fuel cladding and the maximum temperature difference across the oxide film are needed for reliability evaluation based on the design criteria and limits which prohibit spallation of oxide film. In this work, several oxide thickness prediction models were compared with the measured data of in-pile test results from RERTR program. Moreover, specific parametric studies and a preliminary prediction of the aluminum alloy oxidation using the latest model were performed for JRTR fuel. According to the current JRTR fuel management scheme and operation strategy for 5 MW power, fresh fuel is discharged after 900 effective full power days (EFPD), which is too long a span to predict oxidation properly without an elaborate model. The latest model developed by Kim et al. is in good agreement with the recent in-pile test data as well as with the out-of-pile test data available in the literature, and is one of the best predictors for the oxidation of aluminum alloy cladding in various operating condition. Accordingly, this model was chosen for estimating the oxide film thickness. Through the preliminarily evaluation, water pH level is to be controlled lower than 6.2 for the conservativeness in the case of including the effect of anticipated operational occurrences and the spent fuel residence time in the storage rack after discharging. (author)

  11. Self-ordering behavior of nanoporous anodic aluminum oxide (AAO) in malonic acid anodization

    International Nuclear Information System (INIS)

    Lee, W; Nielsch, K; Goesele, U

    2007-01-01

    The self-ordering behavior of anodic aluminum oxide (AAO) has been investigated for anodization of aluminum in malonic acid (H 4 C 3 O 4 ) solution. In the present study it is found that a porous oxide layer formed on the surface of aluminum can effectively suppress catastrophic local events (such as breakdown of the oxide film and plastic deformation of the aluminum substrate), and enables stable fast anodic oxidation under a high electric field of 110-140 V and ∼100 mA cm -2 . Studies on the self-ordering behavior of AAO indicated that the cell homogeneity of AAO increases dramatically as the anodization voltage gets higher than 120 V. Highly ordered AAO with a hexagonal arrangement of the nanopores could be obtained in a voltage range 125-140 V. The current density (i.e., the electric field strength (E) at the bottom of a pore) is an important parameter governing the self-ordering of the nanopores as well as the interpore distance (D int ) for a given anodization potential (U) during malonic acid anodization

  12. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

    2008-01-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  13. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  14. Oxidation of nano-sized aluminum powders

    International Nuclear Information System (INIS)

    Vorozhtsov, A.B.; Lerner, M.; Rodkevich, N.; Nie, H.; Abraham, A.; Schoenitz, M.; Dreizin, E.L.

    2016-01-01

    Highlights: • Weight gain measured in TG oxidation experiments was split between particles of different sizes. • Reaction kinetics obtained by isoconversion explicitly accounting for the effect of size distribution. • Activation energy is obtained as a function of oxide thickness for growth of amorphous alumina. • Oxidation mechanism for nanopowders remains the same as for coarser aluminum powders. - Abstract: Oxidation of aluminum nanopowders obtained by electro-exploded wires is studied. Particle size distributions are obtained from transmission electron microscopy (TEM) images. Thermo-gravimetric (TG) experiments are complemented by TEM and XRD studies of partially oxidized particles. Qualitatively, oxidation follows the mechanism developed for coarser aluminum powder and resulting in formation of hollow oxide shells. Sintering of particles is also observed. The TG results are processed to account explicitly for the particle size distribution and spherical shapes, so that oxidation of particles of different sizes is characterized. The apparent activation energy is obtained as a function of the reaction progress using model-free isoconversion processing of experimental data. A complete phenomenological oxidation model is then proposed assuming a spherically symmetric geometry. The oxidation kinetics of aluminum powder is shown to be unaffected by particle sizes reduced down to tens of nm. The apparent activation energy describing growth of amorphous alumina is increasing at the very early stages of oxidation. The higher activation energy is likely associated with an increasing homogeneity in the growing amorphous oxide layer, initially containing multiple defects and imperfections. The trends describing changes in both activation energy and pre-exponent of the growing amorphous oxide are useful for predicting ignition delays of aluminum particles. The kinetic trends describing activation energies and pre-exponents in a broader range of the oxide

  15. Ultraviolet optical properties of aluminum fluoride thin films deposited by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hennessy, John, E-mail: john.j.hennessy@jpl.nasa.gov; Jewell, April D.; Balasubramanian, Kunjithapatham; Nikzad, Shouleh [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109 (United States)

    2016-01-15

    Aluminum fluoride (AlF{sub 3}) is a low refractive index material with promising optical applications for ultraviolet (UV) wavelengths. An atomic layer deposition process using trimethylaluminum and anhydrous hydrogen fluoride has been developed for the deposition of AlF{sub 3} at substrate temperatures between 100 and 200 °C. This low temperature process has resulted in thin films with UV-optical properties that have been characterized by ellipsometric and reflection/transmission measurements at wavelengths down to 200 nm. The optical loss for 93 nm thick films deposited at 100 °C was measured to be less than 0.2% from visible wavelengths down to 200 nm, and additional microstructural characterization demonstrates that the films are amorphous with moderate tensile stress of 42–105 MPa as deposited on silicon substrates. X-ray photoelectron spectroscopy analysis shows no signature of residual aluminum oxide components making these films good candidates for a variety of applications at even shorter UV wavelengths.

  16. Atmospheric pressure plasma enhanced chemical vapor deposition of zinc oxide and aluminum zinc oxide

    International Nuclear Information System (INIS)

    Johnson, Kyle W.; Guruvenket, Srinivasan; Sailer, Robert A.; Ahrenkiel, S. Phillip; Schulz, Douglas L.

    2013-01-01

    Zinc oxide (ZnO) and aluminum-doped zinc oxide (AZO) thin films were deposited via atmospheric pressure plasma enhanced chemical vapor deposition. A second-generation precursor, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)(N,N′-diethylethylenediamine) zinc, exhibited significant vapor pressure and good stability at one atmosphere where a vaporization temperature of 110 °C gave flux ∼ 7 μmol/min. Auger electron spectroscopy confirmed that addition of H 2 O to the carrier gas stream mitigated F contamination giving nearly 1:1 metal:oxide stoichiometries for both ZnO and AZO with little precursor-derived C contamination. ZnO and AZO thin film resistivities ranged from 14 to 28 Ω·cm for the former and 1.1 to 2.7 Ω·cm for the latter. - Highlights: • A second generation precursor was utilized for atmospheric pressure film growth. • Addition of water vapor to the carrier gas stream led to a marked reduction of ZnF 2 . • Carbonaceous contamination from the precursor was minimal

  17. Role of aluminum doping on phase transformations in nanoporous titania anodic oxides

    Energy Technology Data Exchange (ETDEWEB)

    Bayata, Fatma [Istanbul Bilgi University, Department of Mechanical Engineering, 34060, Eyup, Istanbul (Turkey); Ürgen, Mustafa, E-mail: urgen@itu.edu.tr [Istanbul Technical University, Department of Metallurgical and Materials Engineering, 34469, Maslak, Istanbul (Turkey)

    2015-10-15

    The role of aluminium doping on anatase to rutile phase transformation of nanoporous titanium oxide films were investigated. For this purpose pure and aluminum doped metal films were deposited on alumina substrates by cathodic arc physical deposition. The nanoporous anodic oxides were prepared by porous anodizing of pure and aluminum doped titanium metallic films in an ethylene glycol + NH{sub 4}F based electrolyte. Nanoporous amorphous structures with 60–80 nm diameter and 2–4 μm length were formed on the surfaces of alumina substrates. The amorphous undoped and Al-doped TiO{sub 2} anodic oxides were heat-treated at different temperatures in the range of 280–720 °C for the investigation of their crystallization behavior. The combined effects of nanoporous structure and Al doping on crystallization behavior of titania were investigated using X-ray diffraction (XRD) and micro Raman analysis. The results indicated that both Al ions incorporated into the TiO{sub 2} structure and the nanoporous structure retarded the rutile formation. It was also revealed that presence or absence of metallic film underneath the nanopores has a major contribution to anatase-rutile transformation. - Highlights: • Al-doped TiO{sub 2} nanopores were grown on alumina substrates using anodization method. • The crystallization behavior of nanoporous Al-doped TiO{sub 2} were investigated. • Al doping into nanoporous TiO{sub 2} retarded the anatase-rutile transformation. • Nanostructuring has significant role in controlling rutile formation temperature. • The absence of the metallic film under the nanopores delayed the rutile formation.

  18. The Oxidation Products of Aluminum Hydride and Boron Aluminum Hydride Clusters

    Science.gov (United States)

    2016-01-04

    AFRL-AFOSR-VA-TR-2016-0075 The Oxidation Products of Aluminum Hydride and Boron Aluminum Hydride Clusters KIT BOWEN JOHNS HOPKINS UNIV BALTIMORE MD...2. REPORT TYPE Final Performance 3. DATES COVERED (From - To) 30-09-2014 to 29-09-2015 4. TITLE AND SUBTITLE The Oxidation Products of Aluminum ...Hydride and Boron Aluminum Hydride Clusters 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA9550-14-1-0324 5c.  PROGRAM ELEMENT NUMBER 61102F 6. AUTHOR(S) KIT

  19. Aluminum powder metallurgy processing

    Energy Technology Data Exchange (ETDEWEB)

    Flumerfelt, J.F.

    1999-02-12

    The objective of this dissertation is to explore the hypothesis that there is a strong linkage between gas atomization processing conditions, as-atomized aluminum powder characteristics, and the consolidation methodology required to make components from aluminum powder. The hypothesis was tested with pure aluminum powders produced by commercial air atomization, commercial inert gas atomization, and gas atomization reaction synthesis (GARS). A comparison of the GARS aluminum powders with the commercial aluminum powders showed the former to exhibit superior powder characteristics. The powders were compared in terms of size and shape, bulk chemistry, surface oxide chemistry and structure, and oxide film thickness. Minimum explosive concentration measurements assessed the dependence of explosibility hazard on surface area, oxide film thickness, and gas atomization processing conditions. The GARS aluminum powders were exposed to different relative humidity levels, demonstrating the effect of atmospheric conditions on post-atomization processing conditions. The GARS aluminum powders were exposed to different relative humidity levels, demonstrating the effect of atmospheric conditions on post-atomization oxidation of aluminum powder. An Al-Ti-Y GARS alloy exposed in ambient air at different temperatures revealed the effect of reactive alloy elements on post-atomization powder oxidation. The pure aluminum powders were consolidated by two different routes, a conventional consolidation process for fabricating aerospace components with aluminum powder and a proposed alternative. The consolidation procedures were compared by evaluating the consolidated microstructures and the corresponding mechanical properties. A low temperature solid state sintering experiment demonstrated that tap densified GARS aluminum powders can form sintering necks between contacting powder particles, unlike the total resistance to sintering of commercial air atomization aluminum powder.

  20. Plasma-enhanced chemical vapor deposition of aluminum oxide using ultrashort precursor injection pulses

    NARCIS (Netherlands)

    Dingemans, G.; Sanden, van de M.C.M.; Kessels, W.M.M.

    2012-01-01

    An alternative plasma-enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high-quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the

  1. Effect of aluminum doping on the high-temperature stability and piezoresistive response of indium tin oxide strain sensors

    International Nuclear Information System (INIS)

    Gregory, Otto J.; You, Tao; Crisman, Everett E.

    2005-01-01

    Ceramic strain sensors based on reactively sputtered indium tin oxide (ITO) thin films doped with aluminum are being considered to improve the high-temperature stability and response. Ceramic strain sensors were developed to monitor the structural integrity of components employed in aerospace propulsion systems operating at temperatures in excess of 1500 deg C. Earlier studies using electron spectroscopy for chemical analysis (ESCA) studies indicated that interfacial reactions between ITO and aluminum oxide increase the stability of ITO at elevated temperature. The resulting ESCA depth files showed the presence of two new indium-indium peaks at 448.85 and 456.40 eV, corresponding to the indium 3d5 and 3d3 binding energies. These binding energies are significantly higher than those associated with stoichiometric indium oxide. Based on these studies, a combinatorial chemistry approach was used to screen large numbers of possible concentrations to optimize the stability and performance of Al-doped ceramic strain sensors. Scanning electron microscopy was used to analyze the combinatorial libraries in which varying amounts of aluminum were incorporated into ITO films formed by cosputtering from multiple targets. Electrical stability and piezoresistive response of these films were compared to undoped ITO films over the same temperature range

  2. Porous and mesh alumina formed by anodization of high purity aluminum films at low anodizing voltage

    International Nuclear Information System (INIS)

    Abd-Elnaiem, Alaa M.; Mebed, A.M.; El-Said, Waleed Ahmed; Abdel-Rahim, M.A.

    2014-01-01

    Electrochemical oxidation of high-purity aluminum (Al) films under low anodizing voltages (1–10) V has been conducted to obtain anodic aluminum oxide (AAO) with ultra-small pore size and inter-pore distance. Different structures of AAO have been obtained e.g. nanoporous and mesh structures. Highly regular pore arrays with small pore size and inter-pore distance have been formed in oxalic or sulfuric acids at different temperatures (22–50 °C). It is found that the pore diameter, inter-pore distance and the barrier layer thickness are independent of the anodizing parameters, which is very different from the rules of general AAO fabrication. The brand formation mechanism has been revealed by the scanning electron microscope study. Regular nanopores are formed under 10 V at the beginning of the anodization and then serve as a template layer dominating the formation of ultra-small nanopores. Anodization that is performed at voltages less than 5 V leads to mesh structured alumina. In addition, we have introduced a simple one-pot synthesis method to develop thin walls of oxide containing lithium (Li) ions that could be used for battery application based on anodization of Al films in a supersaturated mixture of lithium phosphate and phosphoric acid as matrix for Li-composite electrolyte. - Highlights: • We develop anodic aluminum oxide (AAO) with small pore size and inter-pore distance. • Applying low anodizing voltages onto aluminum film leads to form mesh structures. • The value of anodizing voltage (1–10 V) has no effect on pore size or inter-pore distance. • Applying anodizing voltage less than 5 V leads to mesh structured AAO. • AAO can be used as a matrix for Li-composite electrolytes

  3. Porous and mesh alumina formed by anodization of high purity aluminum films at low anodizing voltage

    Energy Technology Data Exchange (ETDEWEB)

    Abd-Elnaiem, Alaa M., E-mail: alaa.abd-elnaiem@science.au.edu.eg [KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Mebed, A.M. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Department of Physics, Faculty of Science, Al-Jouf University, Sakaka 2014 (Saudi Arabia); El-Said, Waleed Ahmed [Department of Chemistry, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Abdel-Rahim, M.A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt)

    2014-11-03

    Electrochemical oxidation of high-purity aluminum (Al) films under low anodizing voltages (1–10) V has been conducted to obtain anodic aluminum oxide (AAO) with ultra-small pore size and inter-pore distance. Different structures of AAO have been obtained e.g. nanoporous and mesh structures. Highly regular pore arrays with small pore size and inter-pore distance have been formed in oxalic or sulfuric acids at different temperatures (22–50 °C). It is found that the pore diameter, inter-pore distance and the barrier layer thickness are independent of the anodizing parameters, which is very different from the rules of general AAO fabrication. The brand formation mechanism has been revealed by the scanning electron microscope study. Regular nanopores are formed under 10 V at the beginning of the anodization and then serve as a template layer dominating the formation of ultra-small nanopores. Anodization that is performed at voltages less than 5 V leads to mesh structured alumina. In addition, we have introduced a simple one-pot synthesis method to develop thin walls of oxide containing lithium (Li) ions that could be used for battery application based on anodization of Al films in a supersaturated mixture of lithium phosphate and phosphoric acid as matrix for Li-composite electrolyte. - Highlights: • We develop anodic aluminum oxide (AAO) with small pore size and inter-pore distance. • Applying low anodizing voltages onto aluminum film leads to form mesh structures. • The value of anodizing voltage (1–10 V) has no effect on pore size or inter-pore distance. • Applying anodizing voltage less than 5 V leads to mesh structured AAO. • AAO can be used as a matrix for Li-composite electrolytes.

  4. Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

    Science.gov (United States)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2015-02-01

    In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

  5. Pore diameter control of anodic aluminum oxide with ordered array of nanopores

    Energy Technology Data Exchange (ETDEWEB)

    Bai, Allen; Yang, Yong-Feng [Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu, 30013 (China); Hu, Chi-Chang [Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu 401 (China); Department of Chemical Engineering, National Chung Cheng University, Chia-Yi 621 (China); Lin, Chi-Cheng [Department of Chemical Engineering, National Chung Cheng University, Chia-Yi 621 (China)

    2008-01-01

    Highly uniform, self-ordered anodic aluminum oxide (AAO) with an ordered nanoporous array can be effectively formed from industrially pure (99.5%) aluminum sheets through an anodizing program in a mixture solution of sulfuric and oxalic acids. The influences of anodizing variables, such as applied voltage, solution temperature, oxalic acid concentration, agitation rate, and sulfuric acid concentration, on the average pore diameter of AAO were systematically investigated using fractional factorial design (FFD). The applied voltage, and sulfuric acid concentration were found to be the key factors affecting the pore diameter of AAO films in the FFD study. The pore diameter of AAO is regularly increased from ca. 50 to 150 nm when the applied voltage and the concentration of sulfuric acid are gradually increased from 53 to 80 V and from 3.5 to 8 M, respectively. Fine tuning of the pore diameter for AAO films with an ordered, nanoporous, arrayed structure from industrially pure aluminum sheets can be achieved. (author)

  6. Nanoporous anodic aluminum oxide as a promising material for the electrostatically-controlled thin film interference filter

    International Nuclear Information System (INIS)

    Lo, Pei-Hsuan; Lee, Chih-Chun; Fang, Weileun; Luo, Guo-Lun

    2015-01-01

    This study presents the approach to implement the electrostatically-controlled thin film optical filter by using a nanoporous anodic aluminum oxide (np-AAO) layer as the key suspended micro structure. The bi-stable optical filter operates in the visible spectral range. In this work, the presented bi-stable optical filter has averaged reflectivity of 60%, and the central wavelengths are 580 and 690 nm respectively for on and off states. The presented np-AAO layer offers the following merits for the thin film optical filter: (1) material properties of np-AAO film, such as refractive index, elastic modulus and dielectric constant, can be easily changed by a low temperature pore-widening process, (2) in-use stiction of the suspended np-AAO structure can be reduced by the small contact area of nanoporous textures, (3) driving (pull-in) voltage can be reduced due to a large dielectric constant (ε AAO is 7.05) and small stiffness of np-AAO film and (4) dielectric charging can be reduced by the np-AAO material; thus the offset voltage is small. The study reports the design, fabrication and experimental results of the bi-stable optical filter to demonstrate the advantages of the presented device. The np-AAO material also has the potential for applications of other electrostatic drive micro devices. (paper)

  7. Cerium oxide as conversion coating for the corrosion protection of aluminum

    Directory of Open Access Journals (Sweden)

    JELENA GULICOVSKI

    2013-11-01

    Full Text Available CeO2 coatings were formed on the aluminum after Al surface preparation, by dripping the ceria sol, previously prepared by forced hydrolysis of Ce(NO34. The anticorrosive properties of ceria coatings were investigated by the electrochemical impedance spectroscopy (EIS during the exposure to 0.03 % NaCl. The morphology of the coatings was examined by the scanning electron microscopy (SEM. EIS data indicated considerably larger corrosion resistance of CeO2-coated aluminum than for bare Al. The corrosion processes on Al below CeO2 coating are subjected to more pronounced diffusion limitations in comparison to the processes below passive aluminum oxide film, as the consequence of the formation of highly compact protective coating. The results show that the deposition of ceria coatings is an effective way to improve corrosion resistance for aluminum.

  8. All-Aluminum Thin Film Transistor Fabrication at Room Temperature

    Directory of Open Access Journals (Sweden)

    Rihui Yao

    2017-02-01

    Full Text Available Bottom-gate all-aluminum thin film transistors with multi conductor/insulator nanometer heterojunction were investigated in this article. Alumina (Al2O3 insulating layer was deposited on the surface of aluminum doping zinc oxide (AZO conductive layer, as one AZO/Al2O3 heterojunction unit. The measurements of transmittance electronic microscopy (TEM and X-ray reflectivity (XRR revealed the smooth interfaces between ~2.2-nm-thick Al2O3 layers and ~2.7-nm-thick AZO layers. The devices were entirely composited by aluminiferous materials, that is, their gate and source/drain electrodes were respectively fabricated by aluminum neodymium alloy (Al:Nd and pure Al, with Al2O3/AZO multilayered channel and AlOx:Nd gate dielectric layer. As a result, the all-aluminum TFT with two Al2O3/AZO heterojunction units exhibited a mobility of 2.47 cm2/V·s and an Ion/Ioff ratio of 106. All processes were carried out at room temperature, which created new possibilities for green displays industry by allowing for the devices fabricated on plastic-like substrates or papers, mainly using no toxic/rare materials.

  9. Reaction of Tri-methylaluminum on Si (001) Surface for Initial Aluminum Oxide Thin-Film Growth

    International Nuclear Information System (INIS)

    Kim, Dae Hee; Kim, Dae Hyun; Jeong, Yong Chan; Seo, Hwa Il; Kim, Yeong Cheol

    2010-01-01

    We studied the reaction of tri-methylaluminum (TMA) on hydroxyl (OH)-terminated Si (001) surfaces for the initial growth of aluminum oxide thin-films using density functional theory. TMA was adsorbed on the oxygen atom of OH due to the oxygen atom's lone pair electrons. The adsorbed TMA reacted with the hydrogen atom of OH to produce a di-methylaluminum group (DMA) and methane with an energy barrier of 0.50 eV. Low energy barriers in the range of 0 - 0.11 eV were required for DMA migration to the inter-dimer, intra-dimer, and inter-row sites on the surface. A unimethylaluminum group (UMA) was generated at each site with low energy barriers in the range of 0.21 - 0.25 eV. Among the three sites, the inter-dimer site was the most probable for UMA formation

  10. Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Dondapati, Hareesh; Santiago, Kevin; Pradhan, A. K. [Center for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, Virginia 23504 (United States)

    2013-10-14

    We have investigated the responsible mechanism for the observation of metallic conductivity at room temperature and metal-semiconductor transition (MST) at lower temperatures for aluminum-doped zinc oxide (AZO) films. AZO films were grown on glass substrates by radio-frequency magnetron sputtering with varying substrate temperatures (T{sub s}). The films were found to be crystalline with the electrical resistivity close to 1.1 × 10{sup −3} Ω cm and transmittance more than 85% in the visible region. The saturated optical band gap of 3.76 eV was observed for the sample grown at T{sub s} of 400 °C, however, a slight decrease in the bandgap was noticed above 400 °C, which can be explained by Burstein–Moss effect. Temperature dependent resistivity measurements of these highly conducting and transparent films showed a MST at ∼110 K. The observed metal-like and metal-semiconductor transitions are explained by taking into account the Mott phase transition and localization effects due to defects. All AZO films demonstrate crossover in permittivity from positive to negative and low loss in the near-infrared region, illustrating its applications for plasmonic metamaterials, including waveguides for near infrared telecommunication region. Based on the results presented in this study, the low electrical resistivity and high optical transmittance of AZO films suggested a possibility for the application in the flexible electronic devices, such as transparent conducting oxide film on LEDs, solar cells, and touch panels.

  11. Characteristics of low-resistivity aluminum-doped zinc oxide films deposited at room temperature by off-axis radio-frequency sputtering on flexible plastic substrates

    Science.gov (United States)

    Wang, Li-Min; Wang, Chih-Yi; Jheng, Ciao-Ren; Wu, Syu-Jhan; Sai, Chen-Kai; Lee, Ya-Ju; Chiang, Ching-Yu; Shew, Bor-Yuan

    2016-08-01

    The crystalline structure, morphology, composition, electrical transport, and optical properties of aluminum-doped zinc oxide (AZO) films are studied for applications in transparent electronics and optoelectronic devices. AZO thin films of c-axis-oriented growth and with different thickness were deposited on PET flexible plastic substrates at room temperature by rf magnetron sputtering. A larger grain size with a decreased strain ɛ value is observed in a thicker film, while changes in composition for films with different thicknesses are insignificant. Moreover, the resistivity of film decreases with increasing thickness, and the low-temperature electrical transport properties can be described by the scenario of quantum corrections to conductivity. With the room-temperature growth conditions, the resistivity of 4.5 × 10-4 Ω cm, carrier concentration of 6.4 × 1020 cm-3, and transmittance of 80 % for the 1100-nm-thick film are obtained. In addition, the optical bandgap energy decreases with increasing film thickness, which can be attributed to the bandgap renormalization and crystallite size effects.

  12. Hybrid pulse anodization for the fabrication of porous anodic alumina films from commercial purity (99%) aluminum at room temperature

    International Nuclear Information System (INIS)

    Chung, C K; Zhou, R X; Chang, W T; Liu, T Y

    2009-01-01

    Most porous anodic alumina (PAA) or anodic aluminum oxide (AAO) films are fabricated using the potentiostatic method from high-purity (99.999%) aluminum films at a low temperature of approximately 0-10 deg. C to avoid dissolution effects at room temperature (RT). In this study, we have demonstrated the fabrication of PAA film from commercial purity (99%) aluminum at RT using a hybrid pulse technique which combines pulse reverse and pulse voltages for the two-step anodization. The reaction mechanism is investigated by the real-time monitoring of current. A possible mechanism of hybrid pulse anodization is proposed for the formation of pronounced nanoporous film at RT. The structure and morphology of the anodic films were greatly influenced by the duration of anodization and the type of voltage. The best result was obtained by first applying pulse reverse voltage and then pulse voltage. The first pulse reverse anodization step was used to form new small cells and pre-texture concave aluminum as a self-assembled mask while the second pulse anodization step was for the resulting PAA film. The diameter of the nanopores in the arrays could reach 30-60 nm.

  13. Charge dynamics in aluminum oxide thin film studied by ultrafast scanning electron microscopy.

    Science.gov (United States)

    Zani, Maurizio; Sala, Vittorio; Irde, Gabriele; Pietralunga, Silvia Maria; Manzoni, Cristian; Cerullo, Giulio; Lanzani, Guglielmo; Tagliaferri, Alberto

    2018-04-01

    The excitation dynamics of defects in insulators plays a central role in a variety of fields from Electronics and Photonics to Quantum computing. We report here a time-resolved measurement of electron dynamics in 100 nm film of aluminum oxide on silicon by Ultrafast Scanning Electron Microscopy (USEM). In our pump-probe setup, an UV femtosecond laser excitation pulse and a delayed picosecond electron probe pulse are spatially overlapped on the sample, triggering Secondary Electrons (SE) emission to the detector. The zero of the pump-probe delay and the time resolution were determined by measuring the dynamics of laser-induced SE contrast on silicon. We observed fast dynamics with components ranging from tens of picoseconds to few nanoseconds, that fits within the timescales typical of the UV color center evolution. The surface sensitivity of SE detection gives to the USEM the potential of applying pump-probe investigations to charge dynamics at surfaces and interfaces of current nano-devices. The present work demonstrates this approach on large gap insulator surfaces. Copyright © 2018 Elsevier B.V. All rights reserved.

  14. Fabrication of Nanostructured PLGA Scaffolds Using Anodic Aluminum Oxide Templates

    OpenAIRE

    Hsueh , Cheng-Chih; Wang , Gou-Jen; Hsu , Shan-Hui; Hung , Huey-Shan

    2008-01-01

    Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838); International audience; PLGA (poly(lactic-co-glycolic acid)) is one of the most used biodegradable and biocompatible materials. Nanostructured PLGA even has great application potentials in tissue engineering. In this research, a fabrication technique for nanostructured PLGA membrane was investigated and developed. In this novel fabrication approach, an anodic aluminum oxide (AAO) film was use as the...

  15. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1015 Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide is a blue-green pigment obtained by calcining a...

  16. Corrosion control of aluminum surfaces by polypyrrole films: influence of electrolyte

    Directory of Open Access Journals (Sweden)

    Andréa Santos Liu

    2007-06-01

    Full Text Available Polypyrrole (PPy films were galvanostatically deposited on 99.9 wt. (% aluminum electrodes from aqueous solutions containing each carboxylic acid: tartaric, oxalic or citric. Scanning Electron Microscopy (SEM was used to analyze the morphology of the aluminum surfaces coated with the polymeric films. It was observed that the films deposited from tartaric acid medium presented higher homogeneity than those deposited from oxalic and citric acid. Furthermore, the corrosion protection of aluminum surfaces by PPy films was also investigated by potentiodynamic polarization experiments.

  17. The influence of Ac parameters in the process of micro-arc oxidation film electric breakdown

    Directory of Open Access Journals (Sweden)

    Ma Jin

    2016-01-01

    Full Text Available This paper studies the electric breakdown discharge process of micro-arc oxidation film on the surface of aluminum alloy. Based on the analysis of the AC parameters variation in the micro-arc oxidation process, the following conclusions can be drawn: The growth of oxide film can be divided into three stages, and Oxide film breakdown discharge occurs twice in the micro-arc oxidation process. The first stage is the formation and disruptive discharge of amorphous oxide film, producing the ceramic oxide granules, which belong to solid dielectric breakdown. In this stage the membrane voltage of the oxide film plays a key role; the second stage is the formation of ceramic oxide film, the ceramic oxide granules turns into porous structure oxide film in this stage; the third stage is the growth of ceramic oxide film, the gas film that forms in the oxide film’s porous structure is electric broken-down, which is the second breakdown discharge process, the current density on the oxide film surface could affect the breakdown process significantly.

  18. Dewetting of polymer thin films on modified curved surfaces: preparation of polymer nanoparticles with asymmetric shapes by anodic aluminum oxide templates.

    Science.gov (United States)

    Liu, Chih-Ting; Tsai, Chia-Chan; Chu, Chien-Wei; Chi, Mu-Huan; Chung, Pei-Yun; Chen, Jiun-Tai

    2018-04-18

    We study the dewetting behaviors of poly(methyl methacrylate) (PMMA) thin films coated in the cylindrical nanopores of anodic aluminum oxide (AAO) templates by thermal annealing. Self-assembled monolayers (SAMs) of n-octadecyltrichlorosilane (ODTS) are introduced to modify the pore surfaces of the AAO templates to induce the dewetting process. By using scanning electron microscopy (SEM), the dewetting-induced morphology transformation from the PMMA thin films to PMMA nanoparticles with asymmetric shapes can be observed. The sizes of the PMMA nanoparticles can be controlled by the original PMMA solution concentrations. The dewetting phenomena on the modified nanopores are explained by taking into account the excess intermolecular interaction free energy (ΔG). This work opens a new possibility for creating polymer nanoparticles with asymmetric shapes in confined geometries.

  19. Preparation of micro/nano-structure superhydrophobic film on aluminum plates using galvanic corrosion method.

    Science.gov (United States)

    Wu, Ruomei; Chao, Guang Hua; Jiang, Haiyun; Pan, Anqiang; Chen, Hong; Yuan, Zhiqing; Liu, Qilong

    2013-10-01

    A simple and novel approach has been developed to obtain a microporous film with compound nanoparticles on the surface of aluminum alloy substrate using the galvanic corrosion method. The wettability of the surface changes from hydrophilicity to superhydrophobicity after chemical modification with stearic acid (SA). The water contact angle (WCA) and sliding angle (WSA) of superhydrophobic aluminum alloy surface (SAAS) are 154 degrees and 9 degrees, respectively. The roughness of the aluminum substrate increases after the oxidation reaction. The porous aluminum matrix surface is covered with irregularly shaped holes with a mean radius of about 15 microm, similar to the surface papillae of natural Lotus leaf, with villus-like nanoparticles array on pore surfaces. The superhydrophobic property is attributed to this special surface morphology and low surface energy SA. X-ray powder diffraction (XRD) pattern and Energy Dispersive X-Ray Spectroscopy (EDS) spectrum indicate that Al2O3, Al(OH)3 and AIO(OH) has been formed on the surface of aluminum substrate after the oxidation reaction. The Raman spectra indicate that C-H bond from SA and the Al-O are formed on the SAAS. The as-formed SAAS has good stability.

  20. Negative permittivity of ZnO thin films prepared from aluminum and gallium doped ceramics via pulsed-laser deposition

    DEFF Research Database (Denmark)

    Bodea, M. A.; Sbarcea, G.; Naik, G. V.

    2013-01-01

    Aluminum and gallium doped zinc oxide thin films with negative dielectric permittivity in the near infrared spectral range are grown by pulsed laser deposition. Composite ceramics comprising ZnO and secondary phase Al2O3 or Ga2O3 are employed as targets for laser ablation. Films deposited on glass...

  1. Infrared radiation properties of anodized aluminum

    Energy Technology Data Exchange (ETDEWEB)

    Kohara, S. [Science Univ. of Tokyo, Noda, Chiba (Japan). Dept. of Materials Science and Technology; Niimi, Y. [Science Univ. of Tokyo, Noda, Chiba (Japan). Dept. of Materials Science and Technology

    1996-12-31

    The infrared radiation heating is an efficient and energy saving heating method. Ceramics have been used as an infrared radiant material, because the emissivity of metals is lower than that of ceramics. However, anodized aluminum could be used as the infrared radiant material since an aluminum oxide film is formed on the surface. In the present study, the infrared radiation properties of anodized aluminum have been investigated by determining the spectral emissivity curve. The spectral emissivity curve of anodized aluminum changed with the anodizing time. The spectral emissivity curve shifted to the higher level after anodizing for 10 min, but little changed afterwards. The infrared radiant material with high level spectral emissivity curve can be achieved by making an oxide film thicker than about 15 {mu}m on the surface of aluminum. Thus, anodized aluminum is applicable for the infrared radiation heating. (orig.)

  2. Effect of aluminum addition on the optical, morphology and electrical behavior of spin coated zinc oxide thin films

    Directory of Open Access Journals (Sweden)

    Amit Kumar Srivastava

    2011-09-01

    Full Text Available Aluminum-doped ZnO thin films of high optical transmittance (∼ 84-100% and low resistivity (∼ 2.3x10-2 Ωcm have been prepared on glass substrate by the spin coating and subsequent annealing at 500°C for 1h in air or vacuum. Effect of aluminum doping and annealing environment on morphology, optical transmittance and electrical resistivity of ZnO thin films has been studied with possible application as a transparent electrode in photovoltaic. The changes occurring due to aluminum addition include reduction in grain size, root mean square roughness, peak-valley separation, and sheet resistance with improvement in the optical transmittance to 84-100% in the visible range. The origin of low electrical resistivity lies in increase in i electron concentration following aluminum doping (being trivalent, formation of oxygen vacancies due to vacuum annealing, filling of cation site with additional zinc at solution stage itself and ii carrier mobility.

  3. Ester oxidation on an aluminum surface using chemiluminescence

    Science.gov (United States)

    Jones, William R., Jr.; Meador, Michael A.; Morales, Wilfredo

    1986-01-01

    The oxidation characteristics of a pure ester (trimethyolpropane triheptanoate) were studied by using a chemiluminescence technique. Tests were run in a thin film microoxidation apparatus with an aluminum alloy catalyst. Conditions included a pure oxygen atmosphere and a temperature range of 176 to 206 C. Results indicated that oxidation of the ester (containing .001 M diphenylanthracene as an intensifier) was accompanied by emission of light. The maximum intensity of light emission was a function of the amount of ester, the concentration of intensifier, and the test temperature. The induction period, or the time to reach one-half of maximum intensity was inversely proportional to test temperature. Decreases in light emission at the later stages of a test were caused by depletion of the intensifier.

  4. Highly flexible transparent thin film heaters based on silver nanowires and aluminum zinc oxides

    Energy Technology Data Exchange (ETDEWEB)

    Cheong, Hahn-Gil; Kim, Jin-Hoon; Song, Jun-Hyuk; Jeong, Unyong; Park, Jin-Woo, E-mail: jwpark09@yonsei.ac.kr

    2015-08-31

    In this work, we developed highly flexible transparent film heaters (f-TFHs) composed of Ag nanowire networks (AgNWs) and aluminum zinc oxide (AZO). Uniform AgNWs were roll-to-roll coated on polyethylene terephthalate (PET) substrates using the Mayer rod method, and AZO was sputter-deposited atop the AgNWs at room temperature. The sheet resistance (R{sub s}) and transparency (T{sub opt}) of the AZO-coated AgNWs changed only slightly compared with the uncoated AgNWs. AZO is thermally less conductive than the heat pipes, but increases the thermal efficiency of the heaters blocking the heat convection through the air. Based on Joule heating, a higher average film temperature (T{sub ave}) is attained at a fixed electric potential drop between electrodes (ϕ) as the R{sub s} of the film decreases. Our experimental results revealed that T{sub ave} of the hybrid f-TFH is higher than AgNWs when the ratio of the area coverage of AgNWs to AZO is over a certain value. When a ϕ as low as 3 V/cm was applied to 5 cm × 5 cm f-TFHs, the maximum temperature of the hybrid film was over 100 °C, which is greater than that of AgNWs by more than 30 °C. Furthermore, uniform heating throughout the surfaces is achieved in the hybrid films while heating begins in small areas where densities of the nanowires (NWs) are the highest in the bare network. The non-uniform heating decreases the lifetime of f-TFHs by forming hot spots. Cyclic bending test results indicated that the hybrid films were as flexible as the AgNWs, and the R{sub s} of the hybrid films changes only slightly until 5000 cycles. Combined with the high-throughput coating technology presented here, the hybrid films will provide a robust and scalable strategy for large-area f-TFHs with highly enhanced performance. - Highlights: • We developed highly efficient flexible thin film heaters based on Ag nanowires and AZO composites. • In the composite, AZO plays an important role as an insulation blanket to block heat loss to

  5. Relative SHG measurements of metal thin films: Gold, silver, aluminum, cobalt, chromium, germanium, nickel, antimony, titanium, titanium nitride, tungsten, zinc, silicon and indium tin oxide

    Directory of Open Access Journals (Sweden)

    Franklin Che

    Full Text Available We have experimentally measured the surface second-harmonic generation (SHG of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver. Keywords: Surface second-harmonic generation, Nonlinear optics, Metal thin films

  6. A Study on the Anodic Dissolution of Aluminum(II)

    International Nuclear Information System (INIS)

    Nam, C. W.; Park, C. S.; Park, C. S.

    1978-01-01

    In many cases oxide films formed on metals in atmosphere or aqueous solution are chemically inactive, especially it is the case with aluminum. In this study, anodic dissolution of aluminum was done using various electrolyte and cathode, mechanism of which was examined. As a consequence, oxide film on aluminum surface was dissolved together with the dissolution reaction of metal by the anodic current. It was shown that the dissolution reaction due to the contact between electrolyte and metal happened in the same time

  7. PTFE-ALUMINUM films serve as neutral density filters

    Science.gov (United States)

    Burks, H. D.

    1966-01-01

    Polytetrafluoroethylene /PTFE/ films coated with aluminum films act as neutral density filters in the wavelength range 0.3 to 2.1 microns. These filters are effective in the calibration of photometric systems.

  8. Colloidal infrared reflective and transparent conductive aluminum-doped zinc oxide nanocrystals

    Science.gov (United States)

    Buonsanti, Raffaella; Milliron, Delia J

    2015-02-24

    The present invention provides a method of preparing aluminum-doped zinc oxide (AZO) nanocrystals. In an exemplary embodiment, the method includes (1) injecting a precursor mixture of a zinc precursor, an aluminum precursor, an amine, and a fatty acid in a solution of a vicinal diol in a non-coordinating solvent, thereby resulting in a reaction mixture, (2) precipitating the nanocrystals from the reaction mixture, thereby resulting in a final precipitate, and (3) dissolving the final precipitate in an apolar solvent. The present invention also provides a dispersion. In an exemplary embodiment, the dispersion includes (1) nanocrystals that are well separated from each other, where the nanocrystals are coated with surfactants and (2) an apolar solvent where the nanocrystals are suspended in the apolar solvent. The present invention also provides a film. In an exemplary embodiment, the film includes (1) a substrate and (2) nanocrystals that are evenly distributed on the substrate.

  9. Aluminum-doped Zn O polycrystalline films prepared by co-sputtering of a Zn O-Al target

    Energy Technology Data Exchange (ETDEWEB)

    Becerril, M.; Silva L, H.; Guillen C, A.; Zelaya A, O. [Instituto Politecnico Nacional, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, Apdo. Postal 14-740, 07000 Mexico D. F. (Mexico)

    2014-07-01

    Aluminum-doped Zinc oxide polycrystalline thin films (Azo) were grown on 7059 Corning glass substrates at room temperature by co-sputtering from a Zn O-Al target. The target was designed as follows, high purity elemental Aluminum was evaporated onto a Zn O target covering small areas. The structural, optical and electrical properties were analyzed as a function of Al content. The Al doped Zn O polycrystalline films showed an n-type conductivity. It was found that the electrical resistivity drops and the carrier concentration increases as a consequence of Al incorporation within the Zn O lattice. In both cases, the changes are of several orders of magnitude. From the results, we conclude that, using these Zn O-Al targets, n-type Al doped Zn O polycrystalline films with high transmittance and low resistivity can be obtained. The crystalline structure of the films was determined by X-ray diffraction. Atomic Force Microscopy images were obtained with an Auto probe C P (Veeco Metrology Group) Microscope. (Author)

  10. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg. No...

  11. Fracture Analysis of MWCNT/Epoxy Nanocomposite Film Deposited on Aluminum Substrate.

    Science.gov (United States)

    Her, Shiuh-Chuan; Chien, Pao-Chu

    2017-04-13

    Multi-walled carbon nanotube (MWCNT) reinforced epoxy films were deposited on an aluminum substrate by a hot-pressing process. Three-point bending tests were performed to determine the Young's modulus of MWCNT reinforced nanocomposite films. Compared to the neat epoxy film, nanocomposite film with 1 wt % of MWCNT exhibits an increase of 21% in the Young's modulus. Four-point-bending tests were conducted to investigate the fracture toughness of the MWCNT/epoxy nanocomposite film deposited on an aluminum substrate with interfacial cracks. Based on the Euler-Bernoulli beam theory, the strain energy in a film/substrate composite beam is derived. The difference of strain energy before and after the propagation of the interfacial crack are calculated, leading to the determination of the strain energy release rate. Experimental test results show that the fracture toughness of the nanocomposite film deposited on the aluminum substrate increases with the increase in the MWCNT content.

  12. Evaluation of workers exposed to dust containing hard metals and aluminum oxide.

    Science.gov (United States)

    Schwarz, Y; Kivity, S; Fischbein, A; Abraham, J L; Fireman, E; Moshe, S; Dannon, Y; Topilsky, M; Greif, J

    1998-08-01

    Fourteen worker exposed to hard metals and aluminum oxide were evaluated. Six heavily exposed workers underwent bronchoscopy and bronchoalveolar lavage, and five workers underwent transbronchial biopsy. Microchemical analysis of transbronchial biopsies showed a high lung burden of exogenous particles, especially metal related to their hard metals exposure. Lung tissue and cellular changes, which were associated with exposure to hard metal and aluminum oxide, corresponded well with the microanalytic test results. Three workers had at biopsy diffuse interstitial inflammatory changes: two of them were asymptomatic with normal chest X-ray films, and one had clinically evident disease with severe giant cell inflammation. Two other workers showed focal inflammation. The worker showing clinical disease and one asymptomatic worker with interstitial inflammatory changes had evaluated bronchoalveolar lavage fluid-eosinophilia counts. These two were father (with clinical disease) and son (asymptomatic).

  13. Glancing angle x-ray studies of oxide films

    International Nuclear Information System (INIS)

    Davenport, A.J.; Isaacs, H.S.

    1989-01-01

    High brightness synchrotron radiation incident at glancing angles has been used to study inhibiting species present in low concentrations in oxide films on aluminum. Glancing incident angle fluorescence measurements give surface-sensitive information on the valence state of elements from the shape of the x-ray absorption edge. Angle-resolved measurements show the depth distribution of the species present. 15 refs., 4 figs

  14. Comparative effects of macro-sized aluminum oxide and aluminum oxide nanoparticles on erythrocyte hemolysis: influence of cell source, temperature, and size

    Energy Technology Data Exchange (ETDEWEB)

    Vinardell, M. P., E-mail: mpvinardellmh@ub.edu; Sordé, A. [Universitat de Barcelona, Departament de Fisiologia, Facultat de Farmàcia (Spain); Díaz, J. [Universitat de Barcelona CCiT, Scientific and Technological Centers (Spain); Baccarin, T.; Mitjans, M. [Universitat de Barcelona, Departament de Fisiologia, Facultat de Farmàcia (Spain)

    2015-02-15

    Al{sub 2}O{sub 3} is the most abundantly produced nanomaterial and has been used in diverse fields, including the medical, military, and industrial sectors. As there are concerns about the health effects of nanoparticles, it is important to understand how they interact with cells, and specifically with red blood cells. The hemolysis induced by three commercial nano-sized aluminum oxide particles (nanopowder 13 nm, nanopowder <50 nm, and nanowire 2–6 × 200–400 nm) was compared to aluminum oxide and has been studied on erythrocytes from humans, rats, and rabbits, in order to elucidate the mechanism of action and the influence of size and shape on hemolytic behavior. The concentrations inducing 50 % hemolysis (HC{sub 50}) were calculated for each compound studied. The most hemolytic aluminum oxide particles were of nanopowder 13, followed by nanowire and nanopowder 50. The addition of albumin to PBS induced a protective effect on hemolysis in all the nano-forms of Al{sub 2}O{sub 3}, but not on Al{sub 2}O{sub 3}. The drop in HC{sub 50} correlated to a decrease in nanomaterial size, which was induced by a reduction of aggregation. Aluminum oxide nanoparticles are less hemolytic than other oxide nanoparticles and behave differently depending on the size and shape of the nanoparticles. The hemolytic behavior of aluminum oxide nanoparticles differs from that of aluminum oxide.

  15. The anodizing behavior of aluminum in malonic acid solution and morphology of the anodic films

    Science.gov (United States)

    Ren, Jianjun; Zuo, Yu

    2012-11-01

    The anodizing behavior of aluminum in malonic acid solution and morphology of the anodic films were studied. The voltage-time response for galvanostatic anodization of aluminum in malonic acid solution exhibits a conventional three-stage feature but the formation voltage is much higher. With the increase of electrolyte concentration, the electrolyte viscosity increases simultaneously and the high viscosity decreases the film growth rate. With the concentration increase of the malonic acid electrolyte, the critical current density that initiates local "burning" on the sample surface decreases. For malonic acid anodization, the field-assisted dissolution on the oxide surface is relatively weak and the nucleation of pores is more difficult, which results in greater barrier layer thickness and larger cell dimension. The embryo of the porous structure of anodic film has been created within the linear region of the first transient stage, and the definite porous structure has been established before the end of the first transient stage. The self-ordering behavior of the porous film is influenced by the electrolyte concentration, film thickness and the applied current density. Great current density not only improves the cell arrangement order but also brings about larger cell dimension.

  16. Viscous properties of aluminum oxide nanotubes and aluminium oxide nanoparticles - silicone oil suspensions

    Science.gov (United States)

    Thapa, Ram; French, Steven; Delgado, Adrian; Ramos, Carlos; Gutierrez, Jose; Chipara, Mircea; Lozano, Karen

    2010-03-01

    Electrorheological (ER) fluids consisting of γ-aluminum oxide nanotubes and γ-aluminum oxide nanoparticles dispersed within silicone oil were prepared. The relationship between shear stress and shear rate was measured and theoretically simulated by using an extended Bingham model for both the rheological and electrorheological features of these systems. Shear stress and viscosity showed a sharp increase for the aluminum oxide nanotubes suspensions subjected to applied electric fields whereas aluminum oxide nanoparticles suspensions showed a moderate change. It was found that the transition from liquid to solid state (mediated by the applied electric field) can be described by a power law and that for low applied voltages the relationship is almost linear.

  17. Effect of grain size on the melting point of confined thin aluminum films

    Energy Technology Data Exchange (ETDEWEB)

    Wejrzanowski, Tomasz; Lewandowska, Malgorzata; Sikorski, Krzysztof; Kurzydlowski, Krzysztof J. [Materials Design Division, Faculty of Materials Science and Engineering, Warsaw University of Technology, Woloska 141, 02-507 Warsaw (Poland)

    2014-10-28

    The melting of aluminum thin film was studied by a molecular dynamics (MD) simulation technique. The effect of the grain size and type of confinement was investigated for aluminum film with a constant thickness of 4 nm. The results show that coherent intercrystalline interface suppress the transition of solid aluminum into liquid, while free-surface gives melting point depression. The mechanism of melting of polycrystalline aluminum thin film was investigated. It was found that melting starts at grain boundaries and propagates to grain interiors. The melting point was calculated from the Lindemann index criterion, taking into account only atoms near to grain boundaries. This made it possible to extend melting point calculations to bigger grains, which require a long time (in the MD scale) to be fully molten. The results show that 4 nm thick film of aluminum melts at a temperature lower than the melting point of bulk aluminum (933 K) only when the grain size is reduced to 6 nm.

  18. Superhydrophobic nanostructured ZnO thin films on aluminum alloy substrates by electrophoretic deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Ying; Sarkar, D.K., E-mail: dsarkar@uqac.ca; Chen, X-Grant

    2015-02-01

    Graphical abstract: - Highlights: • Fabrication of superhydrophobic ZnO thin films surfaces by electrophoretic deposition process on aluminum substrates. • Effect of bath temperature on the physical and superhydrophobic properties of thin films. • The water contact angle of 155° ± 3 with roll off property has been observed on the film that was grown at bath temperatures of 50 °C. • The activation energy for electrophoretic deposition of SA-functionalized ZnO nanoparticle is calculated to be 0.50 eV. - Abstract: Superhydrophobic thin films have been fabricated on aluminum alloy substrates by electrophoretic deposition (EPD) process using stearic acid (SA) functionalized zinc oxide (ZnO) nanoparticles suspension in alcohols at varying bath temperatures. The deposited thin films have been characterized using both X-ray diffraction (XRD) and infrared (IR) spectroscopy and it is found that the films contain low surface energy zinc stearate and ZnO nanoparticles. It is also observed that the atomic percentage of Zn and O, roughness and water contact angle of the thin films increase with the increase of the deposited bath temperature. Furthermore, the thin film deposited at 50 °C, having a roughness of 4.54 ± 0.23 μm, shows superhydrophobic properties providing a water contact angle of 155 ± 3° with rolling off properties. Also, the activation energy of electrophoretic deposition of stearic-acid-functionalized ZnO nanoparticles is calculated to be 0.5 eV.

  19. Adhesion-enhanced thick copper film deposition on aluminum oxide by an ion-beam-mixed Al seed layer

    International Nuclear Information System (INIS)

    Kim, Hyung-Jin; Park, Jae-Won

    2012-01-01

    We report a highly-adherent 30-μm Cu conductive-path coating on an aluminum-oxide layer anodized on an aluminum-alloy substrate for a metal-printed circuit-board application. A 50-nm Al layer was first coated with an e-beam evaporative deposition method on the anodized oxide, followed by ion bombardment to mix the interfacial region. Subsequently, a Cu coating was deposited onto the mixed seed layer to the designed thickness. Adhesions of the interface were tested by using tape adhesion test, and pull-off tests and showed commercially acceptable adhesions for such thick coating layers. The ion beam mixing (IBM) plays the role of fastening the thin seed coating layer to the substrate and enhancing the adhesion of the Cu conductive path on the anodized aluminum surface.

  20. Friction reducing behavior of stearic acid film on a textured aluminum substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Quan [School of Mechanical Engineering, Qingdao Technological University, Qingdao 266033 (China); Wan, Yong, E-mail: wanyong@qtech.edu.cn [School of Mechanical Engineering, Qingdao Technological University, Qingdao 266033 (China); Li, Yang; Yang, Shuyan [School of Mechanical Engineering, Qingdao Technological University, Qingdao 266033 (China); Yao, Wenqing [Analysis Center of Tsinghua University, Beijing 100084 (China)

    2013-09-01

    A simple two-step process was developed to render the aluminum hydrophobicity with lower friction. The textured aluminum substrate was firstly fabricated by immersed in a sodium hydroxide solution at 100 °C for 1 h. Stearic acid film was then deposited to acquire high hydrophobicity. Scanning electron microscopy, IR spectroscopy and water contact angle measurements were used to analyze the morphological features, chemical structure and hydrophobicity of prepared samples, respectively. Moreover, the friction reducing behavior of the organic–inorganic composite film on aluminum sliding against steel was evaluated in a ball-on-plate configuration. It was found that the stearic acid film on the textured aluminum led to decreased friction with significantly extended life.

  1. Formulation and method for preparing gels comprising hydrous aluminum oxide

    Science.gov (United States)

    Collins, Jack L.

    2014-06-17

    Formulations useful for preparing hydrous aluminum oxide gels contain a metal salt including aluminum, an organic base, and a complexing agent. Methods for preparing gels containing hydrous aluminum oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including aluminum, an organic base, and a complexing agent.

  2. Recent progress in the development and understanding of silicon surface passivation by aluminum oxide for photovoltaics

    NARCIS (Netherlands)

    Dingemans, G.; Kessels, W.M.M.

    2010-01-01

    In the recent years, considerable progress has been made in the understanding of the unique silicon surface passivation properties of aluminum oxide (Al2O3) films including its underlying mechanisms. Containing a high fixed negative charge density located close to the Si interface, Al2O3 provides a

  3. Internal friction study of microplasticity of aluminum thin films on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nishio, Y.; Tanahashi, K.; Asano, S. [Nagoya Institute of Technology, Nagoya (Japan)

    1995-12-01

    Internal friction in aluminum thin films 0.2 to 2.0 {mu}m thick on silicon substrates has been investigated between 180 and 360 K as a function of strain amplitude by means of a free-decay method of flexural vibration. According to the constitutive equation, the internal friction in the film alone can be evaluated separately from the data on the film/substrate composite. The amplitude-dependent part of internal friction in aluminum films is found in the strain range approximately two orders of magnitude higher than that for bulk aluminum. On the basis of the microplasticity theory, the amplitude-dependent internal friction can be converted into the plastic strain as a function of the effective stress on dislocation motion. The mechanical responses thus obtained for aluminum films show that the plastic strain of the order of 10-9 in creases nonlinearly with increasing stress. These curves tend to shift to a higher stress with decreasing film thickness and also with decreasing temperature, both indicating a suppression of the microplastic deformation. At all temperatures examined, the microflow stress at a constant level of the plastic strain varies inversely with the film thickness, which qualitatively agrees with the variation in macroscopic yield stress. 36 refs., 7 figs.

  4. Yttrium aluminum garnet coating on glass substrate

    Energy Technology Data Exchange (ETDEWEB)

    Ferreira, Camila M.A.; Freiria, Gabriela S.; Faria, Emerson H. de; Rocha, Lucas A.; Ciuffi, Katia J.; Nassar, Eduardo J., E-mail: eduardo.nassar@unifran.edu.br

    2016-02-15

    Thin luminescent films have seen great technological advances and are applicable in the production of a variety of materials such as sensors, solar cells, photovoltaic devices, optical magnetic readers, waveguides, lasers, and recorders. Systems that contain yttrium aluminum oxide are important hosts for lanthanide ions and serve as light emission devices. This work deals with the deposition of yttrium aluminum garnet (YAG) film doped with Eu{sup 3+} onto a glass substrate obtained by the sol–gel methodology. Spray pyrolysis furnished the yttrium aluminum oxide powder. Dip-coating at a withdrawal speed of 10 mm min{sup −1} and evaporation led to deposition of different numbers of layers of the YAG:Eu{sup 3+} film onto the glass substrate from a YAG:Eu{sup 3+} powder suspension containing ethanol, water, and tetraethylorthosilicate. Photoluminescence, X-ray diffraction, scanning electron microscopy, and transparency measurements aided film characterization. The emission spectra revealed that the number of layers influenced film properties. - Highlights: • The spray pyrolysis was used to obtain luminescent YAG:Eu{sup 3+}. • The matrix was deposited as transparent films. • The YAG:Eu{sup 3+} was deposited by sol–gel process onto glass substrate.

  5. Yttrium aluminum garnet coating on glass substrate

    International Nuclear Information System (INIS)

    Ferreira, Camila M.A.; Freiria, Gabriela S.; Faria, Emerson H. de; Rocha, Lucas A.; Ciuffi, Katia J.; Nassar, Eduardo J.

    2016-01-01

    Thin luminescent films have seen great technological advances and are applicable in the production of a variety of materials such as sensors, solar cells, photovoltaic devices, optical magnetic readers, waveguides, lasers, and recorders. Systems that contain yttrium aluminum oxide are important hosts for lanthanide ions and serve as light emission devices. This work deals with the deposition of yttrium aluminum garnet (YAG) film doped with Eu 3+ onto a glass substrate obtained by the sol–gel methodology. Spray pyrolysis furnished the yttrium aluminum oxide powder. Dip-coating at a withdrawal speed of 10 mm min −1 and evaporation led to deposition of different numbers of layers of the YAG:Eu 3+ film onto the glass substrate from a YAG:Eu 3+ powder suspension containing ethanol, water, and tetraethylorthosilicate. Photoluminescence, X-ray diffraction, scanning electron microscopy, and transparency measurements aided film characterization. The emission spectra revealed that the number of layers influenced film properties. - Highlights: • The spray pyrolysis was used to obtain luminescent YAG:Eu 3+ . • The matrix was deposited as transparent films. • The YAG:Eu 3+ was deposited by sol–gel process onto glass substrate.

  6. Oxidation of aluminum alloy cladding for research and test reactor fuel

    Science.gov (United States)

    Kim, Yeon Soo; Hofman, G. L.; Robinson, A. B.; Snelgrove, J. L.; Hanan, N.

    2008-08-01

    The oxide thicknesses on aluminum alloy cladding were measured for the test plates from irradiation tests RERTR-6 and 7A in the ATR (advanced test reactor). The measured thicknesses were substantially lower than those of test plates with similar power from other reactors available in the literature. The main reason is believed to be due to the lower pH (pH 5.1-5.3) of the primary coolant water in the ATR than in the other reactors (pH 5.9-6.5) for which we have data. An empirical model for oxide film thickness predictions on aluminum alloy used as fuel cladding in the test reactors was developed as a function of irradiation time, temperature, surface heat flux, pH, and coolant flow rate. The applicable ranges of pH and coolant flow rates cover most research and test reactors. The predictions by the new model are in good agreement with the in-pile test data available in the literature as well as with the RERTR test data measured in the ATR.

  7. Oxidation of aluminum alloy cladding for research and test reactor fuel

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yeon Soo [Argonne National Laboratory, Nuclear Engineering, 9700 South Cass Avenue, Argonne, IL 60439 (United States)], E-mail: yskim@anl.gov; Hofman, G.L. [Argonne National Laboratory, Nuclear Engineering, 9700 South Cass Avenue, Argonne, IL 60439 (United States); Robinson, A.B. [Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States); Snelgrove, J.L.; Hanan, N. [Argonne National Laboratory, Nuclear Engineering, 9700 South Cass Avenue, Argonne, IL 60439 (United States)

    2008-08-31

    The oxide thicknesses on aluminum alloy cladding were measured for the test plates from irradiation tests RERTR-6 and 7A in the ATR (advanced test reactor). The measured thicknesses were substantially lower than those of test plates with similar power from other reactors available in the literature. The main reason is believed to be due to the lower pH (pH 5.1-5.3) of the primary coolant water in the ATR than in the other reactors (pH 5.9-6.5) for which we have data. An empirical model for oxide film thickness predictions on aluminum alloy used as fuel cladding in the test reactors was developed as a function of irradiation time, temperature, surface heat flux, pH, and coolant flow rate. The applicable ranges of pH and coolant flow rates cover most research and test reactors. The predictions by the new model are in good agreement with the in-pile test data available in the literature as well as with the RERTR test data measured in the ATR.

  8. Stoichiometry and characterization of aluminum oxynitride thin films grown by ion-beam-assisted pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zabinski, J.S. [Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States); Hu, J.J. [Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)], E-mail: Jianjun.Hu@WPAFB.AF.MIL; Bultman, J.E. [Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States); Pierce, N.A. [Propulsion Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States); Voevodin, A.A. [Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2008-07-31

    Oxides are inherently stable in air at elevated temperatures and may serve as wear resistant matrices for solid lubricants. Aluminum oxide is a particularly good candidate for a matrix because it has good diffusion barrier properties and modest hardness. Most thin film deposition techniques that are used to grow alumina require high temperatures to impart crystallinity. Crystalline films are about twice as hard as amorphous ones. Unfortunately, the mechanical properties of most engineering steels are degraded at temperatures above 250-350 deg. C. This work is focused on using energetic reactive ion bombardment during simultaneous pulsed laser deposition to enhance film crystallization at low temperatures. Alumina films were grown at several background gas pressures and temperatures, with and without Ar ion bombardment. The films were nearly stoichiometric except for depositions in vacuum. Using nitrogen ion bombardment, nitrogen was incorporated into the films and formed the Al-O-N matrix. Nitrogen concentration could be controlled through selection of gas pressure and ion energy. Crystalline Al-O-N films were grown at 330 deg. C with a negative bias voltage to the substrate, and showed improved hardness in comparison to amorphous films.

  9. Fabrication and Corrosion Resistance of Superhydrophobic Hydroxide Zinc Carbonate Film on Aluminum Substrates

    Directory of Open Access Journals (Sweden)

    Jin Liang

    2013-01-01

    Full Text Available Superhydrophobic hydroxide zinc carbonate (HZC films were fabricated on aluminum substrate through a convenient in situ deposition process. Firstly, HZC films with different morphologies were deposited on aluminum substrates through immersing the aluminum substrates perpendicularly into aqueous solution containing zinc nitrate hexahydrate and urea. Secondly, the films were then modified with fluoroalkylsilane (FAS: CH3(CF26(CH23Si(OCH33 molecules by immersing in absolute ethanol solution containing FAS. The morphologies, hydrophobicity, chemical compositions, and bonding states of the films were analyzed by scanning electron microscopy (SEM, water contact angle measurement (CA, Fourier transform infrared spectrometer (FTIR, and X-ray photoelectron spectroscopy (XPS, respectively. It was shown by surface morphological observation that HZC films displayed different microstructures such as microporous structure, rose petal-like structure, block-shaped structure, and pinecone-like structure by altering the deposition condition. A highest water contact angle of 156.2° was obtained after FAS modification. Moreover, the corrosion resistance of the superhydrophobic surface on aluminum substrate was investigated using electrochemical impedance spectroscopy (EIS measurements. The EIS measurements’ results revealed that the superhydrophobic surface considerably improved the corrosion resistance of aluminum.

  10. Optimization of aluminum-doped zinc oxide films deposited at low temperature by radio-frequency sputtering on flexible substrates for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B. [Grupo de Ingenieria Fotonica (GRIFO), Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares, Madrid (Spain)

    2010-02-15

    Aluminum-doped zinc oxide films were deposited at 100 C on polyethylene terephthalate by radio-frequency magnetron sputtering. The sputtering parameters such as RF power and Argon working pressure were varied from 25 to 125 W and from 1.1 to 0.2 Pa, respectively. The structural properties of as-deposited films were analysed by X-ray diffraction, showing that all the deposited films were polycrystalline, with hexagonal structure and a strong preferred c-axis orientation (0 0 2). Full width at half maximum and grain sizes were around 0.27 and ranged from 24 to 32 nm, respectively. The strain state of the samples was also estimated from X-ray diffraction measurements, obtaining compressive stresses from 0.29 to 0.05 GPa. Resistivity as low as 1.1 x 10{sup -3} {omega} cm was achieved for the film deposited at 75 W and 0.2 Pa, sample that showed a low strain state of -0.06 GPa. High optical transmittance ({proportional_to}80%) was exhibited when films were deposited at RF powers below 100 W. Band gap energies ranged from 3.36 to 3.39 eV and a refractive index of 1.80{+-}0.05, constant in the visible region, was also obtained. (author)

  11. Magnetic composites based on hybrid spheres of aluminum oxide and superparamagnetic nanoparticles of iron oxides

    International Nuclear Information System (INIS)

    Braga, Tiago P.; Vasconcelos, Igor F.; Sasaki, Jose M.; Fabris, J.D.; Oliveira, Diana Q.L. de; Valentini, Antoninho

    2010-01-01

    Materials containing hybrid spheres of aluminum oxide and superparamagnetic nanoparticles of iron oxides were obtained from a chemical precursor prepared by admixing chitosan and iron and aluminum hydroxides. The oxides were first characterized with scanning electron microscopy, X-ray diffraction, and Moessbauer spectroscopy. Scanning electron microscopy micrographs showed the size distribution of the resulting spheres to be highly homogeneous. The occurrence of nano-composites containing aluminum oxides and iron oxides was confirmed from powder X-ray diffraction patterns; except for the sample with no aluminum, the superparamagnetic relaxation due to iron oxide particles were observed from Moessbauer spectra obtained at 298 and 110 K; the onset six line-spectrum collected at 20 K indicates a magnetic ordering related to the blocking relaxation effect for significant portion of small spheres in the sample with a molar ratio Al:Fe of 2:1.

  12. RBS and NRA of cobalt oxide thin films prepared by the sol-gel process

    International Nuclear Information System (INIS)

    Andrade, E.; Huerta, L.; Pineda, J.C.; Zavala, E.P.; Barrera, E.; Rocha, M. F.; Vargas, C.A.

    2001-01-01

    This work presents a study of cobalt oxide thin films produced by the sol-gel process on aluminum and glass substrates. These films have been analyzed using two ion beam analysis (IBA) techniques: a) a standard RBS 4 He 2 MeV and b) nuclear reaction analysis (NRA) using a 1 MeV deuterium beam. The 12 C(d,p 0 ) 13 C nuclear reaction provides information that carbon is incorporated into the film structure, which could be associated to the sinterization film process. Other film measurements such as optical properties, XRD, and SEM were performed in order to complement the IBA analysis. The results show that cobalt oxide film coatings prepared by this technique have good optical properties as solar absorbers and potential uses in solar energy applications

  13. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

    2013-01-01

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature

  14. Porous Aluminum Oxide and Magnesium Oxide Films Using Organic Hydrogels as Structure Matrices

    Directory of Open Access Journals (Sweden)

    Zimei Chen

    2018-03-01

    Full Text Available We describe the synthesis of mesoporous Al2O3 and MgO layers on silicon wafer substrates by using poly(dimethylacrylamide hydrogels as porogenic matrices. Hydrogel films are prepared by spreading the polymer through spin-coating, followed by photo-cross-linking and anchoring to the substrate surface. The metal oxides are obtained by swelling the hydrogels in the respective metal nitrate solutions and subsequent thermal conversion. Combustion of the hydrogel results in mesoporous metal oxide layers with thicknesses in the μm range and high specific surface areas up to 558 m2∙g−1. Materials are characterized by SEM, FIB ablation, EDX, and Kr physisorption porosimetry.

  15. Features of the theories of the formation of oxide films on aluminum alloys piston diesel engines with micro-arc oxidation

    OpenAIRE

    Skryabin M.L.; Smekhova I. N.

    2017-01-01

    The article considers one of the promising methods of surface hardening of piston aluminum alloy – microarc oxidation. Described fundamental differences from the micro-arc oxidation anodizing and similar electrochemical processes. The schemes of formation of the barrier and outer layers surface treatment in aqueous electrolytes. Shows the mechanism of formation of the interface. Considers the formation of layers with high porosity and method of exposure. Also describes the exponential depende...

  16. Effect of the Milling Time of the Precursors on the Physical Properties of Sprayed Aluminum-Doped Zinc Oxide (ZnO:Al Thin Films

    Directory of Open Access Journals (Sweden)

    María De La Luz Olvera

    2012-08-01

    Full Text Available Aluminum doped zinc oxide (ZnO:Al thin films were deposited on soda-lime glass substrates by the chemical spray technique. The atomization of the solution was carried out by ultrasonic excitation. Six different starting solutions from both unmilled and milled Zn and Al precursors, dissolved in a mix of methanol and acetic acid, were prepared. The milling process was carried out using a planetary ball mill at a speed of 300 rpm, and different milling times, namely, 15, 25, 35, 45, and 60 min. Molar concentration, [Al]/[Zn] atomic ratio, deposition temperature and time, were kept at constant values; 0.2 M, 3 at.%, 475 °C, and 10 min, respectively. Results show that, under the same deposition conditions, electrical resistivities of ZnO:Al thin films deposited from milled precursors are lower than those obtained for films deposited from unmilled precursors. X-ray diffraction analysis revealed that all films display a polycrystalline structure, fitting well with the hexagonal wurtzite structure. Changes in surface morphology were observed by scanning electron microscopy (SEM as well, since films deposited from unmilled precursors show triangular shaped grains, in contrast to films deposited from 15 and 35 min milled precursors that display thin slices with hexagonal shapes. The use of milled precursors to prepare starting solutions for depositing ZnO:Al thin films by ultrasonic pyrolysis influences their physical properties.

  17. Electrodeposited Reduced Graphene Oxide Films on Stainless Steel, Copper, and Aluminum for Corrosion Protection Enhancement

    OpenAIRE

    Abdulkareem Mohammed Ali Al-Sammarraie; Mazin Hasan Raheema

    2017-01-01

    The enhancement of corrosion protection of metals and alloys by coating with simple, low cost, and highly adhered layer is still a main goal of many workers. In this research graphite flakes converted into graphene oxide using modified Hammers method and then reduced graphene oxide was electrodeposited on stainless steel 316, copper, and aluminum for corrosion protection application in seawater at four temperatures, namely, 20, 30, 40, and 50°C. All corrosion measurements, kinetics, and therm...

  18. Effect of the aluminum flow pattern on the bonding of aluminum to oxidized Zircaloy-2

    International Nuclear Information System (INIS)

    Watson, R.D.; Lambert, J.P.

    1965-04-01

    The bonds produced when hot aluminum is allowed to flow smoothly from an extrusion die to the oxidized surface of a heated tube of Zircaloy-2 are consistently inferior to those produced with back-extruded flow. The difference is believed to be due to the reduction in, or elimination of, the oxide layer on the aluminum that comes in contact with the surface of the Zircaloy-2. This method of bonding aluminum to Zircaloy-2 is covered by Canadian patent 702,438 January 1965. (author)

  19. Preparation of titanium dioxide films on etched aluminum foil by vacuum infiltration and anodizing

    Science.gov (United States)

    Xiang, Lian; Park, Sang-Shik

    2016-12-01

    Al2O3-TiO2 (Al-Ti) composite oxide films are a promising dielectric material for future use in capacitors. In this study, TiO2 films were prepared on etched Al foils by vacuum infiltration. TiO2 films prepared using a sol-gel process were annealed at various temperatures (450, 500, and 550 °C) for different time durations (10, 30, and 60 min) for 4 cycles, and then anodized at 100 V. The specimens were characterized using X-ray diffraction, field emission scanning electron microscopy, and field emission transmission electron microscopy. The results show that the tunnels of the specimens feature a multi-layer structure consisting of an Al2O3 outer layer, an Al-Ti composite oxide middle layer, and an aluminum hydrate inner layer. The electrical properties of the specimens, such as the withstanding voltage and specific capacitance, were also measured. Compared to specimens without TiO2 coating, the specific capacitances of the TiO2-coated specimens are increased. The specific capacitance of the anode Al foil with TiO2 coating increased by 42% compared to that of a specimen without TiO2 coating when annealed at 550 °C for 10 min. These composite oxide films could enhance the specific capacitance of anode Al foils used in dielectric materials.

  20. Influences of different oxidants on the characteristics of HfAlOx films deposited by atomic layer deposition

    International Nuclear Information System (INIS)

    Fan Ji-Bin; Liu Hong-Xia; Ma Fei; Zhuo Qing-Qing; Hao Yue

    2013-01-01

    A comparative study of two kinds of oxidants (H 2 O and O 3 ) with the combinations of two metal precursors [trimethylaluminum (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH)] for atomic layer deposition (ALD) hafnium aluminum oxide (HfAlO x ) films is carried out. The effects of different oxidants on the physical properties and electrical characteristics of HfAlO x films are studied. The preliminary testing results indicate that the impurity level of HfAlO x films grown with both H 2 O and O 3 used as oxidants can be well controlled, which has significant effects on the dielectric constant, valence band, electrical properties, and stability of HfAlO x film. Additional thermal annealing effects on the properties of HfAlO x films grown with different oxidants are also investigated. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. New roots to formation of nanostructures on glass surface through anodic oxidation of sputtered aluminum

    Directory of Open Access Journals (Sweden)

    Satoru Inoue, Song-Zhu Chu, Kenji Wada, Di Li and Hajime Haneda

    2003-01-01

    Full Text Available New processes for the preparation of nanostructure on glass surfaces have been developed through anodic oxidation of sputtered aluminum. Aluminum thin film sputtered on a tin doped indium oxide (ITO thin film on a glass surface was converted into alumina by anodic oxidation. The anodic alumina gave nanometer size pore array standing vertically on the glass surface. Kinds of acids used in the anodic oxidation changed the pore size drastically. The employment of phosphoric acid solution gave several tens nanometer size pores. Oxalic acid cases produced a few tens nanometer size pores and sulfuric acid solution provided a few nanometer size pores. The number of pores in a unit area could be changed with varying the applied voltage in the anodization and the pore sizes could be increased by phosphoric acid etching. The specimen consisting of a glass substrate with the alumina nanostructures on the surface could transmit UV and visible light. An etched specimen was dipped in a TiO2 sol solution, resulting in the impregnation of TiO2 sol into the pores of alumina layer. The TiO2 sol was heated at ~400 °C for 2 h, converting into anatase phase TiO2. The specimens possessing TiO2 film on the pore wall were transparent to the light in UV–Visible region. The electro deposition technique was applied to the introduction of Ni metal into pores, giving Ni nanorod array on the glass surface. The removal of the barrier layer alumina at the bottom of the pores was necessary to attain smooth electro deposition of Ni. The photo catalytic function of the specimens possessing TiO2 nanotube array was investigated in the decomposition of acetaldehyde gas under the irradiation of UV light, showing that the rate of the decomposition was quite large.

  2. Ultrasonic Welding of Thin Alumina and Aluminum Using Inserts

    Science.gov (United States)

    Ishikuro, Tomoaki; Matsuoka, Shin-Ichi

    This paper describes an experimental study of ultrasonic welding of thin ceramics and metals using inserts. Ultrasonic welding has enable the joining of various thick ceramics, such as Al2O3 and ZrO2, to aluminum at room temperature quickly and easily as compared to other welding methods. However, for thin ceramics, which are brittle, welding is difficult to perform without causing damage. In this study, aluminum anodized oxide with different anodizing time was used as thin alumina ceramic. Vapor deposition of aluminum alloys was used to create an effective binder layer for welding at a low pressure and within a short duration in order to prevent damage to the anodic oxide film formed with a short anodizing time. For example, ultrasonic welding of thin Al2O3/Al was accomplished under the following conditions: ultrasonic horn tip amplitude of 30µm, welding pressure of 5MPa, and required duration of 0.1s. However, since the vapor deposition film tends to exfoliate as observed in the anodic oxide film formed with a long anodizing time, welding was difficult.

  3. Oxidation of ligand-protected aluminum clusters: An ab initio molecular dynamics study

    International Nuclear Information System (INIS)

    Alnemrat, Sufian; Hooper, Joseph P.

    2014-01-01

    We report Car-Parrinello molecular dynamics simulations of the oxidation of ligand-protected aluminum clusters that form a prototypical cluster-assembled material. These clusters contain a small aluminum core surrounded by a monolayer of organic ligand. The aromatic cyclopentadienyl ligands form a strong bond with surface Al atoms, giving rise to an organometallic cluster that crystallizes into a low-symmetry solid and is briefly stable in air before oxidizing. Our calculations of isolated aluminum/cyclopentadienyl clusters reacting with oxygen show minimal reaction between the ligand and O 2 molecules at simulation temperatures of 500 and 1000 K. In all cases, the reaction pathway involves O 2 diffusing through the ligand barrier, splitting into atomic oxygen upon contact with the aluminum, and forming an oxide cluster with aluminum/ligand bonds still largely intact. Loss of individual aluminum-ligand units, as expected from unimolecular decomposition calculations, is not observed except following significant oxidation. These calculations highlight the role of the ligand in providing a steric barrier against oxidizers and in maintaining the large aluminum surface area of the solid-state cluster material

  4. Progress in Nano-Engineered Anodic Aluminum Oxide Membrane Development

    OpenAIRE

    Gerrard Eddy Jai Poinern; Derek Fawcett; Nurshahidah Ali

    2011-01-01

    The anodization of aluminum is an electro-chemical process that changes the surface chemistry of the metal, via oxidation, to produce an anodic oxide layer. During this process a self organized, highly ordered array of cylindrical shaped pores can be produced with controllable pore diameters, periodicity and density distribution. This enables anodic aluminum oxide (AAO) membranes to be used as templates in a variety of nanotechnology applications without the need for expensive lithographical ...

  5. The role of stress in self-ordered porous anodic oxide formation and corrosion of aluminum

    Science.gov (United States)

    Capraz, Omer Ozgur

    The phenomenon of plastic flow induced by electrochemical reactions near room temperature is significant in porous anodic oxide (PAO) films, charging of lithium batteries and stress-corrosion cracking (SCC). As this phenomenon is poorly understood, fundamental insight into flow from our work may provide useful information for these problems. In-situ monitoring of the stress state allows direct correlation between stress and the current or potential, thus providing fundamental insight into technologically important deformation and failure mechanisms induced by electrochemical reactions. A phase-shifting curvature interferometry was designed to investigate the stress generation mechanisms on different systems. Resolution of our curvature interferometry was found to be ten times more powerful than that obtained by state-of-art multiple deflectometry technique and the curvature interferometry helps to resolve the conflicting reports in the literature. During this work, formation of surface patterns during both aqueous corrosion of aluminum and formation of PAO films were investigated. Interestingly, for both cases, stress induced plastic flow controls the formation of surface patterns. Pore formation mechanisms during anodizing of the porous aluminum oxide films was investigated . PAO films are formed by the electrochemical oxidation of metals such as aluminum and titanium in a solution where oxide is moderately soluble. They have been used extensively to design numerous devices for optical, catalytic, and biological and energy related applications, due to their vertically aligned-geometry, high-specific surface area and tunable geometry by adjusting process variables. These structures have developed empirically, in the absence of understanding the process mechanism. Previous experimental studies of anodizing-induced stress have extensively focused on the measurement of average stress, however the measurement of stress evolution during anodizing does not provide

  6. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.

    2013-02-06

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.

  7. Thin film metrology and microwave loss characterization of indium and aluminum/indium superconducting planar resonators

    Science.gov (United States)

    McRae, C. R. H.; Béjanin, J. H.; Earnest, C. T.; McConkey, T. G.; Rinehart, J. R.; Deimert, C.; Thomas, J. P.; Wasilewski, Z. R.; Mariantoni, M.

    2018-05-01

    Scalable architectures characterized by quantum bits (qubits) with low error rates are essential to the development of a practical quantum computer. In the superconducting quantum computing implementation, understanding and minimizing material losses are crucial to the improvement of qubit performance. A new material that has recently received particular attention is indium, a low-temperature superconductor that can be used to bond pairs of chips containing standard aluminum-based qubit circuitry. In this work, we characterize microwave loss in indium and aluminum/indium thin films on silicon substrates by measuring superconducting coplanar waveguide resonators and estimating the main loss parameters at powers down to the sub-photon regime and at temperatures between 10 and 450 mK. We compare films deposited by thermal evaporation, sputtering, and molecular beam epitaxy. We study the effects of heating in a vacuum and ambient atmospheric pressure as well as the effects of pre-deposition wafer cleaning using hydrofluoric acid. The microwave measurements are supported by thin film metrology including secondary-ion mass spectrometry. For thermally evaporated and sputtered films, we find that two-level state are the dominant loss mechanism at low photon number and temperature, with a loss tangent due to native indium oxide of ˜ 5 × 10 - 5 . The molecular beam epitaxial films show evidence of the formation of a substantial indium-silicon eutectic layer, which leads to a drastic degradation in resonator performance.

  8. An electrochemical investigation of the corrosion behavior of aluminum alloys in chloride containing solutions

    International Nuclear Information System (INIS)

    Campos Filho, Jorge Eustaquio de

    2005-01-01

    Aluminum alloys have been used as cladding materials for nuclear fuel in research reactors due to its corrosion resistance. Aluminum owes its good corrosion resistance to a protective barrier oxide film formed and strongly bonded to its surface. In pool type TRIGA IPR-R1 reactor, located at Centro de Desenvolvimento da Tecnologia Nuclear in Belo Horizonte, previous immersion coupon tests revealed that aluminum alloys suffer from pitting corrosion, in spite of high quality of water control. Corrosion attack is initiated by breaking the protective oxide film on aluminum alloy surface. Chloride ions can break this oxide film and stimulate metal dissolution. In this study the aluminum alloys 1050, 5052 and 6061 were used to evaluate their corrosion behavior in chloride containing solutions. The electrochemical techniques used were potentiodynamic anodic polarization and cyclic polarization. Results showed that aluminum alloys 5052 and 6061 present similar corrosion resistance in low chloride solutions (0,1 ppm NaCl) and in reactor water but both alloys are less resistant in high chloride solution (1 ppm NaCl). Aluminum alloy 1050 presented similar behavior in the three electrolytes used, regarding to pitting corrosion, indicating that the concentration of the chloride ions was not the only variable to influence its corrosion susceptibility. (author)

  9. A preliminary study of ester oxidation on an aluminum surface using chemiluminescence

    Science.gov (United States)

    Jones, William R., Jr.; Meador, Michael A.; Morales, Wilfredo

    1987-01-01

    The oxidation characteristics of a pure ester (trimethyolpropane triheptanoate) were studied by using a chemiluminescence technique. Tests were run in a thin-film micro-oxidation apparatus with an aluminum alloy catalyst. Conditions included a pure oxygen atmosphere and a temperature range of 176 to 206 C. Results indicated that oxidation of the ester (containing 10 to the minus 3rd power M diphenylanthracene as an intensifier) was accompanied by emission of light. The maximum intensity of light emission (I sub max) was a function of the amount of ester, the concentration of intensifier, and the test temperature. The induction period or the time to reach one-half of maximum intensity (t sub 1/2) was an inverse function of test temperature. Decreases in light emission at the later stages of a test were caused by depletion of the intensifier.

  10. Effect of sealing on the morphology of anodized aluminum oxide

    International Nuclear Information System (INIS)

    Hu, Naiping; Dong, Xuecheng; He, Xueying; Browning, James F.; Schaefer, Dale W.

    2015-01-01

    Highlights: • We explored structural change of anodizing aluminum oxide induced by sealing. • All sealing methods decrease pore size as shown by X-ray/neutron scattering. • Cold sealing and hot water sealing do not alter the aluminum oxide framework. • Hot nickel acetate sealing both fills the pores and deposits on air oxide interface. • Samples with hot nickel acetate sealing outperform other sealing methods. - Abstract: Ultra-small angle X-ray scattering (USAXS), small-angle neutron scattering (SANS), X-ray reflectometry (XRR) and neutron reflectometry (NR) were used to probe structure evolution induced by sealing of anodized aluminum. While cold nickel acetate sealing and hot-water sealing decrease pore size, these methods do not alter the cylindrical porous framework of the anodic aluminum oxide layer. Hot nickel acetate both fills the pores and deposits on the air surface (air–oxide interface), leading to low porosity and small mean pore radius (39 Å). Electrochemical impedance spectroscopy and direct current polarization show that samples sealed by hot nickel acetate outperform samples sealed by other sealing methods

  11. L2O3 NANOSTRUCTURED FILMS CREATION BY METHOD OF ELECTROCHEMICAL ANODIZING

    Directory of Open Access Journals (Sweden)

    M. V. Zhukov

    2013-05-01

    Full Text Available Thin oxide films of aluminum were investigated by method of scanning probe microscopy. Electrical parameters of anodizing process were studied on different samples of aluminum to get the most structured oxide. The comparison of surface structure topography was held on oxide films by NTegra scanning probe microscope

  12. Reduction of Oxidative Melt Loss of Aluminum and Its Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Dr. Subodh K. Das; Shridas Ningileri

    2006-03-17

    This project led to an improved understanding of the mechanisms of dross formation. The microstructural evolution in industrial dross samples was determined. Results suggested that dross that forms in layers with structure and composition determined by the local magnesium concentration alone. This finding is supported by fundamental studies of molten metal surfaces. X-ray photoelectron spectroscopy data revealed that only magnesium segregates to the molten aluminum alloy surface and reacts to form a growing oxide layer. X-ray diffraction techniques that were using to investigate an oxidizing molten aluminum alloy surface confirmed for the first time that magnesium oxide is the initial crystalline phase that forms during metal oxidation. The analytical techniques developed in this project are now available to investigate other molten metal surfaces. Based on the improved understanding of dross initiation, formation and growth, technology was developed to minimize melt loss. The concept is based on covering the molten metal surface with a reusable physical barrier. Tests in a laboratory-scale reverberatory furnace confirmed the results of bench-scale tests. The main highlights of the work done include: A clear understanding of the kinetics of dross formation and the effect of different alloying elements on dross formation was obtained. It was determined that the dross evolves in similar ways regardless of the aluminum alloy being melted and the results showed that amorphous aluminum nitride forms first, followed by amorphous magnesium oxide and crystalline magnesium oxide in all alloys that contain magnesium. Evaluation of the molten aluminum alloy surface during melting and holding indicated that magnesium oxide is the first crystalline phase to form during oxidation of a clean aluminum alloy surface. Based on dross evaluation and melt tests it became clear that the major contributing factor to aluminum alloy dross was in the alloys with Mg content. Mg was

  13. Effects of concentration of reduced graphene oxide on properties of sol–gel prepared Al-doped zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chou, Ching-Tian; Wang, Fang-Hsing, E-mail: fansen@dragon.nchu.edu.tw; Chen, Wei-Chun

    2016-04-30

    Reduced-graphene-oxide-incorporated aluminum-doped zinc oxide (AZO:rGO) composite thin films were synthesized on glass substrates by using the sol–gel method. The effect of the rGO concentration (0–3 wt%) on structural, electrical, and optical properties of the composite film was investigated by X-ray diffraction, scanning electron microscopy, atomic force microscopy, Hall-effect measurement, and ultraviolet–visible spectrometry. All of the composite films showed a typical hexagonal wurtzite structure, and the films incorporated with 1 wt% rGO showed the highest (0 0 2) peak intensity. The sheet resistance of the films was effectively reduced by a factor of more than two as the rGO ratio increased from 0 to 1 wt%. However, the sheet resistance increased with a further increase in the rGO ratio. The optical transmittance of the composite film monotonically decreased with increasing the rGO ratio from 0 to 3 wt%. The average optical transmittance (400–700 nm) of the AZO:rGO thin film within 1 wt% rGO was above 81%. - Highlights: • Reduced-graphene-oxide-doped ZnO:Al composite films are synthesized by sol–gel. • All AZO:rGO thin films show a typical hexagonal wurtzite structure. • Sheet resistance of AZO:rGO(1 wt%) film decreases by a factor of more than two. • The average visible transmittance of the AZO:rGO(1 wt%) film was 81%.

  14. Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Rouahi, A., E-mail: rouahi_ahlem@yahoo.fr [Univ. Grenoble Alpes, G2Elab, F-38000 (France); Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Challali, F. [Laboratoire des Sciences des Procédés et des Matériaux (LSPM)-CNRS-UPR3407, Université Paris13, 99 Avenue Jean-Baptiste Clément, 93430, Villetaneuse (France); Dakhlaoui, I. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Vallée, C. [CNRS, LTM, CEA-LETI, F-38000 Grenoble (France); Salimy, S. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Jomni, F.; Yangui, B. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Besland, M.P.; Goullet, A. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Sylvestre, A. [Univ. Grenoble Alpes, G2Elab, F-38000 (France)

    2016-05-01

    In this study, the dielectric properties of metal-oxide-metal capacitors based on Tantalum Titanium Oxide (TiTaO) thin films deposited by reactive magnetron sputtering on aluminum bottom electrode are investigated. The structure of the films was characterized by Atomic Force Microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The dielectric properties of TiTaO thin films were studied by complex impedance spectroscopy over a wide frequency range (10{sup -2} - to 10{sup 5} Hz) and temperatures in -50 °C to 325 °C range. The contributions of different phases, phases’ boundaries and conductivity effect were highlighted by Cole – Cole diagram (ε” versus ε’). Two relaxation processes have been identified in the electric modulus plot. A first relaxation process appears at low temperature with activation energy of 0.37 eV and it is related to the motion of Ti{sup 4+} (Skanavi’s model). A second relaxation process at high temperature is related to Maxwell-Wagner-Sillars relaxation with activation energy of 0.41 eV. - Highlights: • Titanium Tantalum Oxide thin films are grown on Aluminum substrate. • The existence of phases was confirmed by X-ray photoelectron spectroscopy. • Conductivity effect appears in Cole-Cole plot. • At low temperatures, a relaxation phenomenon obeys to Skanavi’s model. • Maxwell-Wagner-Sillars polarization is processed at high temperatures.

  15. Residual stress and texture in Aluminum doped Zinc Oxide layers deposited by reactive radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Azanza Ricardo, C.L., E-mail: Cristy.Azanza@ing.unitn.it [Department of Civil, Environmental and Mechanical Engineering, University of Trento, 38123 via Mesiano 77, Trento (Italy); Pastorelli, M.; D' Incau, M. [Department of Civil, Environmental and Mechanical Engineering, University of Trento, 38123 via Mesiano 77, Trento (Italy); Aswath, P. [College of Engineering, University of Texas at Arlington, TX (United States); Scardi, P. [Department of Civil, Environmental and Mechanical Engineering, University of Trento, 38123 via Mesiano 77, Trento (Italy)

    2016-04-30

    Aluminum doped Zinc Oxide thin films were deposited on standard soda-lime substrates by reactive radio frequency magnetron sputtering. Residual stress and texture were studied by X-ray diffraction, while X-ray Absorption Near Edge Spectroscopy provided information on the Al environment in the best performing thin films. The influence of deposition parameters on structural and microstructural properties is discussed. A correlation between microstructure and residual stress state with electrical and optical properties is proposed. - Highlights: • Al doped ZnO thin films were obtained by reactive radio frequency magnetron sputtering. • Correlation of stresses and texture with electrical and optical properties is shown. • Homogeneous and stress-free thin-films are the best performing ones. • XANES confirmed the doping mechanism and excluded some spurious phases.

  16. Improving pitting corrosion resistance of aluminum by anodizing process

    International Nuclear Information System (INIS)

    John, P.; Khan, I.U.

    2013-01-01

    Summary: Anodizing of aluminum was studied in sulphuric/citric/boric acid electrolyte system to improve pitting corrosion resistance. Maximum oxide film thickness was obtained using 5% sulphuric acid, 3% citric acid and 0.5% boric acid electrolyte composition. The corrosion resistance of aluminum sample was determined to find the effectiveness of oxide coating by potentiodynamic polarization test. The surface morphology of aluminum samples was investigated using scanning electron microscope (SEM) before and after corrosion test. It was found that the coated aluminum sample obtained by anodizing in sulphuric/citric/boric acid electrolyte system exhibited better pitting corrosion resistance with no significant difference in surface morphology. (author)

  17. Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

    Energy Technology Data Exchange (ETDEWEB)

    Fiorentino, Giuseppe, E-mail: g.fiorentino@tudelft.nl; Morana, Bruno [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT Delft (Netherlands); Forte, Salvatore [Department of Electronic, University of Naples Federico II, Piazzale Tecchio, 80125 Napoli (Italy); Sarro, Pasqualina Maria [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT, Delft (Netherlands)

    2015-01-15

    In this paper, the authors study the protective effect against oxidation of a thin layer of atomic layer deposited (ALD) aluminum oxide (Al{sub 2}O{sub 3}). Nitrogen doped silicon carbide (poly-SiC:N) based microheaters coated with ALD Al{sub 2}O{sub 3} are used as test structure to investigate the barrier effect of the alumina layers to oxygen and water vapor at very high temperature (up to 1000 °C). Different device sets have been fabricated changing the doping levels, to evaluate possible interaction between the dopants and the alumina layer. The as-deposited alumina layer morphology has been evaluated by means of AFM analysis and compared to an annealed sample (8 h at 1000 °C) to estimate the change in the grain structure and the film density. The coated microheaters are subjected to very long oxidation time in dry and wet environment (up to 8 h at 900 and 1000 °C). By evaluating the electrical resistance variation between uncoated reference devices and the ALD coated devices, the oxide growth on the SiC is estimated. The results show that the ALD alumina coating completely prevents the oxidation of the SiC up to 900 °C in wet environment, while an oxide thickness reduction of 50% is observed at 1000 °C compared to uncoated devices.

  18. Effect of aluminum oxide doping on the structural, electrical, and optical properties of zinc oxide (AOZO) nanofibers synthesized by electrospinning

    International Nuclear Information System (INIS)

    Lotus, A.F.; Kang, Y.C.; Walker, J.I.; Ramsier, R.D.; Chase, G.G.

    2010-01-01

    Zinc oxide nanofibers doped with aluminum oxide were prepared by sol-gel processing and electrospinning techniques using polyvinylpyrrolidone (PVP), zinc acetate and aluminum acetate as precursors. The resulting nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV-Vis spectroscopy, and current-voltage (I-V) properties. The nanofibers had diameters in the range of 60-150 nm. The incorporation of aluminum oxide resulted in a decrease in the crystallite sizes of the zinc oxide nanofibers. Aluminum oxide doped zinc oxide (AOZO) nanofibers exhibited lower bandgap energies compared to undoped zinc oxide nanofibers. However, as the aluminum content (Al/(Al + Zn) x 100%) was increased from 1.70 at.% to 3.20 at.% in the electrospinning solution, the bandgap energy increased resulting in lower conductivity. The electrical conductivity of the AOZO samples was found to depend on the amount of aluminum dopant in the matrix as reflected in the changes in oxidation state elucidated from XPS data. Electrospinning was found to be a productive, simple, and easy method for tuning the bandgap energy and conductivity of zinc oxide semiconducting nanofibers.

  19. Effect of temperature oscillation on thermal characteristics of an aluminum thin film

    Science.gov (United States)

    Ali, H.; Yilbas, B. S.

    2014-12-01

    Energy transport in aluminum thin film is examined due to temperature disturbance at the film edge. Thermal separation of electron and lattice systems is considered in the analysis, and temperature variation in each sub-system is formulated. The transient analysis of frequency-dependent and frequency-independent phonon radiative transport incorporating electron-phonon coupling is carried out in the thin film. The dispersion relations of aluminum are used in the frequency-dependent analysis. Temperature at one edge of the film is oscillated at various frequencies, and temporal response of phonon intensity distribution in the film is predicted numerically using the discrete ordinate method. To assess the phonon transport characteristics, equivalent equilibrium temperature is introduced. It is found that equivalent equilibrium temperature in the electron and lattice sub-systems oscillates due to temperature oscillation at the film edge. The amplitude of temperature oscillation reduces as the distance along the film thickness increases toward the low-temperature edge of the film. Equivalent equilibrium temperature attains lower values for the frequency-dependent solution of the phonon transport equation than that corresponding to frequency-independent solution.

  20. Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating

    International Nuclear Information System (INIS)

    Fryauf, David M.; Zhang, Junce; Norris, Kate J.; Diaz Leon, Juan J.; Oye, Michael M.; Kobayashi, Nobuhiko P.; Wei, Min

    2014-01-01

    This paper describes our finding that optical properties of semiconductor nanowires were modified by depositing a thin layer of metal oxide. Indium phosphide nanowires were grown by metal organic chemical vapor deposition on silicon substrates with gold catalyst resulting in three-dimensional nanowire networks, and optical properties were obtained from the collective nanowire networks. The networks were coated with an aluminum oxide thin film deposited by plasma-enhanced atomic layer deposition. We studied the dependence of the peak wavelength of photoluminescence spectra on the thickness of the oxide coatings. A continuous blue shift in photoluminescence spectra was observed when the thickness of the oxide coating was increased. The observed blue shift is attributed to the Burstein-Moss effect due to increased carrier concentration in the nanowire cores caused by repulsion from intrinsic negative fixed charges located at the inner oxide surface. Samples were further characterized by scanning electron microscopy, Raman spectroscopy, transmission electron microscopy, and selective area diffractometry to better understand the physical mechanisms for the blue shift. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating

    Energy Technology Data Exchange (ETDEWEB)

    Fryauf, David M.; Zhang, Junce; Norris, Kate J.; Diaz Leon, Juan J.; Oye, Michael M.; Kobayashi, Nobuhiko P. [Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California, Santa Cruz, CA (United States); Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA (United States); NASA Ames Research Center, Moffett Field, CA (United States); Wei, Min [Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA (United States); School of Micro-Electronics and Solid-Electronics, University of Electronic Science and Technology of China, Chengdu (China)

    2014-07-15

    This paper describes our finding that optical properties of semiconductor nanowires were modified by depositing a thin layer of metal oxide. Indium phosphide nanowires were grown by metal organic chemical vapor deposition on silicon substrates with gold catalyst resulting in three-dimensional nanowire networks, and optical properties were obtained from the collective nanowire networks. The networks were coated with an aluminum oxide thin film deposited by plasma-enhanced atomic layer deposition. We studied the dependence of the peak wavelength of photoluminescence spectra on the thickness of the oxide coatings. A continuous blue shift in photoluminescence spectra was observed when the thickness of the oxide coating was increased. The observed blue shift is attributed to the Burstein-Moss effect due to increased carrier concentration in the nanowire cores caused by repulsion from intrinsic negative fixed charges located at the inner oxide surface. Samples were further characterized by scanning electron microscopy, Raman spectroscopy, transmission electron microscopy, and selective area diffractometry to better understand the physical mechanisms for the blue shift. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. The preparation and corrosion resistance of Ce and Nd modified anodic films on aluminum

    International Nuclear Information System (INIS)

    Li Qizheng; Tang Yuming; Zuo Yu

    2010-01-01

    Rare earth element Ce and Nd modified anodic films were prepared on aluminum surface by a relatively simple method: the aluminum samples were first immersed in Ni(NO 3 ) 2 solutions containing Ce or Nd salts at 90 deg. C, then were dried and anodized. The contents of Ce or Nd in the anodic films were from 0.5% to 0.9%, and about 4-5% Ni was also introduced in the films. The modified anodic films were more compact with much smaller pores and increased hardness. In neutral, acidic and basic NaCl solutions, the rare earth modified films showed obviously improved corrosion resistance. The Ce modified films showed better corrosion resistance than Nd modified films. The cracking resistance of the films under heating was also improved.

  3. Oxide ultrathin films science and technology

    CERN Document Server

    Pacchioni, Gianfranco

    2012-01-01

    A wealth of information in one accessible book. Written by international experts from multidisciplinary fields, this in-depth exploration of oxide ultrathin films covers all aspects of these systems, starting with preparation and characterization, and going on to geometrical and electronic structure, as well as applications in current and future systems and devices. From the Contents: Synthesis and Preparation of Oxide Ultrathin Films Characterization Tools of Oxide Ultrathin Films Ordered Oxide Nanostructures on Metal Surfaces Unusual Properties of Oxides and Other Insulators in the Ultrathin Limit Silica and High-K Dielectrics Thin Films in Microelectronics Oxide Passive Films and Corrosion Protection Oxide Films as Catalytic Materials and as Models of Real Catalysts Oxide Films in Spintronics Oxide Ultrathin Films in Solid Oxide Fuel Cells Transparent Conducting and Chromogenic Oxide Films as Solar Energy Materials Oxide Ultrathin Films in Sensor Applications Ferroelectricity in Ultrathin Film Capacitors T...

  4. Aluminum Corrosion and Turbidity

    International Nuclear Information System (INIS)

    Longtin, F.B.

    2003-01-01

    Aluminum corrosion and turbidity formation in reactors correlate with fuel sheath temperature. To further substantiate this correlation, discharged fuel elements from R-3, P-2 and K-2 cycles were examined for extent of corrosion and evidence of breaking off of the oxide film. This report discusses this study

  5. Nanosecond laser ablation processes in aluminum-doped zinc-oxide for photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Canteli, D., E-mail: david.canteli@ciemat.es [Division de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda. Complutense, 22, 28040 Madrid (Spain); Fernandez, S. [Division de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda. Complutense, 22, 28040 Madrid (Spain); Molpeceres, C. [Centro Laser, Universidad Politecnica de Madrid, Ctra. de Valencia Km 7.3, 28031 Madrid (Spain); Torres, I.; Gandia, J.J. [Division de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda. Complutense, 22, 28040 Madrid (Spain)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer A study of the ablation of AZO thin films deposited at different temperature conditions with nanosecond UV laser light for photovoltaic devices has been performed. Black-Right-Pointing-Pointer The ablation threshold of AZO thin films was measured and related with the absorption coefficient of the films at the laser wavelength, showing a direct correspondence. Black-Right-Pointing-Pointer A change in the material structure in the areas closest to the edges of laser grooves made in samples deposited at temperatures below 100 Degree-Sign C was observed and studied. - Abstract: Aiming to a future use in thin film solar modules, the processing of aluminum doped zinc oxide thin films with good optoelectronic properties with a nanosecond-pulsed ultraviolet laser has been studied. The ablation threshold fluence of the films has been determined and associated with the material properties. The ablation process has been optimized and grooves with good properties for photovoltaic devices have been obtained. The morphology of the ablated surfaces has been observed by confocal microscopy and its structure has been characterized by Raman spectroscopy. The influence of ablation parameters like focus distance, pulse energy and repetition frequency in the groove morphology has been studied with special attention to the thermal effects on the material structure.

  6. Nanosecond laser ablation processes in aluminum-doped zinc-oxide for photovoltaic devices

    International Nuclear Information System (INIS)

    Canteli, D.; Fernandez, S.; Molpeceres, C.; Torres, I.; Gandía, J.J.

    2012-01-01

    Highlights: ► A study of the ablation of AZO thin films deposited at different temperature conditions with nanosecond UV laser light for photovoltaic devices has been performed. ► The ablation threshold of AZO thin films was measured and related with the absorption coefficient of the films at the laser wavelength, showing a direct correspondence. ► A change in the material structure in the areas closest to the edges of laser grooves made in samples deposited at temperatures below 100 °C was observed and studied. - Abstract: Aiming to a future use in thin film solar modules, the processing of aluminum doped zinc oxide thin films with good optoelectronic properties with a nanosecond-pulsed ultraviolet laser has been studied. The ablation threshold fluence of the films has been determined and associated with the material properties. The ablation process has been optimized and grooves with good properties for photovoltaic devices have been obtained. The morphology of the ablated surfaces has been observed by confocal microscopy and its structure has been characterized by Raman spectroscopy. The influence of ablation parameters like focus distance, pulse energy and repetition frequency in the groove morphology has been studied with special attention to the thermal effects on the material structure.

  7. W-containing oxide layers obtained on aluminum and titanium by PEO as catalysts in thiophene oxidation

    Science.gov (United States)

    Rudnev, V. S.; Lukiyanchuk, I. V.; Vasilyeva, M. S.; Morozova, V. P.; Zelikman, V. M.; Tarkhanova, I. G.

    2017-11-01

    W-containing oxide layers fabricated on titanium and aluminum alloys by Plasma electrolytic oxidation (PEO) have been tested in the reaction of the peroxide oxidation of thiophene. Samples with two types of coatings have been investigated. Coatings I contained tungsten oxide in the matrix and on the surface of amorphous silica-titania or silica-alumina layers, while coatings II comprised crystalline WO3 and/or Al2(WO4)3. Aluminum-supported catalyst containing a smallest amount of transition metals in the form of tungsten oxides and manganese oxides in low oxidation levels showed high activity and stability.

  8. Laser-Ultrasonic Measurement of Elastic Properties of Anodized Aluminum Coatings

    Science.gov (United States)

    Singer, F.

    Anodized aluminum oxide plays a great role in many industrial applications, e.g. in order to achieve greater wear resistance. Since the hardness of the anodized films strongly depends on its processing parameters, it is important to characterize the influence of the processing parameters on the film properties. In this work the elastic material parameters of anodized aluminum were investigated using a laser-based ultrasound system. The anodized films were characterized analyzing the dispersion of Rayleigh waves with a one-layer model. It was shown that anodizing time and temperature strongly influence Rayleigh wave propagation.

  9. Electrical and mechanical stability of aluminum-doped ZnO films grown on flexible substrates by atomic layer deposition

    International Nuclear Information System (INIS)

    Luka, G.; Witkowski, B.S.; Wachnicki, L.; Jakiela, R.; Virt, I.S.; Andrzejczuk, M.; Lewandowska, M.; Godlewski, M.

    2014-01-01

    Highlights: • Transparent and conductive ZnO:Al films were grown by atomic layer deposition. • The films were grown on flexible substrates at low growth temperatures (110–140 °C). • So-obtained films have low resistivities, of the order of 10 −3 Ω cm. • Bending tests indicated a critical bending radius of ≈1.2 cm. • Possible sources of the film resistivity changes upon bending are proposed. - Abstract: Aluminum-doped zinc oxide (AZO) films were grown on polyethylene terephthalate (PET) substrates by atomic layer deposition (ALD) at low deposition temperatures (110–140 °C). The films have low resistivities, ∼10 −3 Ω cm, and high transparency (∼90%) in the visible range. Bending tests indicated a critical bending radius of ≈1.2 cm, below which the resistivity changes became irreversible. The films deposited on PET with additional buffer layer are more stable upon bending and temperature changes

  10. Load transfer of nanocomposite film on aluminum substrate.

    Science.gov (United States)

    Her, Shiuh-Chuan; Chien, Pao-Chu

    2018-01-01

    Nanocomposite films have attracted much attention in recent years. Depending on the composition of the film and fabrication method, a large range of applications has been employed for nanocomposite films. In this study, nanocomposite films reinforced with multi-walled carbon nanotubes (MWCNTs) were deposited on the aluminum substrate through hot press processing. A shear lag model and Euler beam theory were employed to evaluate the stress distribution and load carrying capability of the nanocomposite film subjected to tensile load and bending moment. The influence of MWCNT on the Young's modulus and load carrying capability of the nanocomposite film was investigated through a parametric study. The theoretical predictions were verified by comparison with experimental tests. A close agreement with difference less than 6% was achieved between the theoretical prediction and experimental measurements. The Young's modulus and load transfer of the nanocomposite film reinforced with MWCNTs increases with the increase of the MWCNT loading. Compared to the neat epoxy film, nanocomposite film with 1 wt % of MWCNT exhibits an increase of 20% in both the Young's modulus and load carrying capability.

  11. Formation of aluminum films on silicon by ion beam deposition: a comparison with ionized cluster beam deposition

    International Nuclear Information System (INIS)

    Zuhr, R.A.; Haynes, T.E.; Galloway, M.D.; Tanaka, S.; Yamada, A.; Yamada, I.

    1991-01-01

    The direct ion beam deposition (IBD) technique has been used to study the formation of oriented aluminum films on single crystal silicon substrates. In the IBD process, thin film growth is accomplished by decelerating a magnetically analyzed ion beam to low energies (10-200 eV) for direct deposition onto the substrate under UHV conditions. The aluminum-on-silicon system is one which has been studied extensively by ionized cluster beam (ICB) deposition. This technique has produced intriguing results for aluminum, with oriented crystalline films being formed at room temperature in spite of the 25% mismatch in lattice constant between aluminum and silicon. In this work, we have studied the formation of such films by IBD, with emphasis on the effects of ion energy, substrate temperature, and surface cleanliness. Oriented films have been grown on Si(111) at temperatures from 40 to 300degC and with ion energies of 30-120 eV per ion. Completed films were analyzed by ion scattering, X-ray diffraction, scanning-electron microscopy, and optical microscopy. Results achieved for thin films grown by IBD are comparable to those for similar films grown by ICB deposition. (orig.)

  12. Oxidation dynamics of aluminum nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Li, Ying [Argonne Leadership Computing Facility, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya [Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Chemical Engineering and Materials Science, Department of Computer Science, University of Southern California, Los Angeles, California 90089-0242 (United States)

    2015-02-23

    Aluminum nanorods (Al-NRs) are promising fuels for pyrotechnics due to the high contact areas with oxidizers, but their oxidation mechanisms are largely unknown. Here, reactive molecular dynamics simulations are performed to study thermally initiated burning of oxide-coated Al-NRs with different diameters (D = 26, 36, and 46 nm) in oxygen environment. We found that thinner Al-NRs burn faster due to the larger surface-to-volume ratio. The reaction initiates with the dissolution of the alumina shell into the molten Al core to generate heat. This is followed by the incorporation of environmental oxygen atoms into the resulting Al-rich shell, thereby accelerating the heat release. These results reveal an unexpectedly active role of the alumina shell as a “nanoreactor” for oxidation.

  13. Study of Plasma Electrolytic Oxidation Coatings on Aluminum Composites

    Directory of Open Access Journals (Sweden)

    Leonid Agureev

    2018-06-01

    Full Text Available Coatings, with a thickness of up to 75 µm, were formed by plasma electrolytic oxidation (PEO under the alternating current electrical mode in a silicate-alkaline electrolyte on aluminum composites without additives and alloyed with copper (1–4.5%. The coatings’ structure was analyzed by scanning electron microscopy, X-ray microanalysis, X-ray photoelectron spectroscopy, nuclear backscattering spectrometry, and XRD analysis. The coatings formed for 60 min were characterized by excessive aluminum content and the presence of low-temperature modifications of alumina γ-Al2O3 and η-Al2O3. The coatings formed for 180 min additionally contained high-temperature corundum α-Al2O3, and aluminum inclusions were absent. The electrochemical behavior of coated composites and uncoated ones in 3% NaCl was studied. Alloyage of aluminum composites with copper increased the corrosion current density. Plasma electrolytic oxidation reduced it several times.

  14. Preparation of titanium dioxide films on etched aluminum foil by vacuum infiltration and anodizing

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Lian, E-mail: xianglian93@163.com; Park, Sang-Shik, E-mail: parkss@knu.ac.kr

    2016-12-01

    Highlights: • Al{sub 2}O{sub 3}–TiO{sub 2} composite films were prepared onto high voltage Al etching foil. • The coated and anodized samples showed multi-layer structures. • The capacitances of TiO{sub 2} coated samples showed an increase of 42%. • The increase in capacitance was mainly due to the Al–Ti composite layer. - Abstract: Al{sub 2}O{sub 3}–TiO{sub 2} (Al–Ti) composite oxide films are a promising dielectric material for future use in capacitors. In this study, TiO{sub 2} films were prepared on etched Al foils by vacuum infiltration. TiO{sub 2} films prepared using a sol–gel process were annealed at various temperatures (450, 500, and 550 °C) for different time durations (10, 30, and 60 min) for 4 cycles, and then anodized at 100 V. The specimens were characterized using X-ray diffraction, field emission scanning electron microscopy, and field emission transmission electron microscopy. The results show that the tunnels of the specimens feature a multi-layer structure consisting of an Al{sub 2}O{sub 3} outer layer, an Al–Ti composite oxide middle layer, and an aluminum hydrate inner layer. The electrical properties of the specimens, such as the withstanding voltage and specific capacitance, were also measured. Compared to specimens without TiO{sub 2} coating, the specific capacitances of the TiO{sub 2}-coated specimens are increased. The specific capacitance of the anode Al foil with TiO{sub 2} coating increased by 42% compared to that of a specimen without TiO{sub 2} coating when annealed at 550 °C for 10 min. These composite oxide films could enhance the specific capacitance of anode Al foils used in dielectric materials.

  15. The effects of beam energy and substrate temperature on the tribological properties of hard-carbon films on aluminum

    International Nuclear Information System (INIS)

    Wei, R.; Wilbur, P.J.; Erdemir, A.; Kustas, F.M.

    1992-01-01

    Hard-carbon films were applied on flat 6061-T6 aluminum substrates using a broad-beam ion source operating on methane and producing carbonaceous ions with energies that varied from 250 to 1050 eV. Films were evaluated using a reciprocating alumina ball-on-flat sliding wear tester operating in an ambient air test environment. The films facilitated substantial reductions in friction coefficients to 0.08-0.2 from 0.4-0.7 for uncoated aluminum. At a sufficiently high normal load, the films failed and friction coefficients increased to the higher range. The best film caused this critical normal load to increase from less than 0.1 N for untreated aluminum to greater than 30 N. A near-optimal beam ion energy (450 eV) was identified for good quality films. At lower energies (e.g. 250 eV) films were discontinuous, while at higher energies (e.g. 1050 eV) high sputter rates limited film growth. When an aluminum flat was held at low temperature during processing, the films were smooth and adhered well, but they became rougher and adhered poorly as the temperature was increased above approximately 300degC. (orig.)

  16. Local deposition of polypyrrole on aluminum by anodizing, laser irradiation, and electrolytic polymerization and its application to the fabrication of micro-actuators

    Energy Technology Data Exchange (ETDEWEB)

    Akiyama, Y. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-Ku, Sapporo (Japan); Kikuchi, T. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-Ku, Sapporo (Japan)]. E-mail: kiku@elechem1-mc.eng.hokudai.ac.jp; Ueda, M. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-Ku, Sapporo (Japan); Iida, M. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-Ku, Sapporo (Japan); Sakairi, M. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-Ku, Sapporo (Japan); Takahashi, H. [Graduate School of Engineering, Hokkaido University, N13 W8 Kita-Ku, Sapporo (Japan)

    2006-06-15

    Polypyrrole was deposited at selected areas on aluminum by anodizing, laser irradiation, and electrolytic polymerization, and the application of the technique for fabricating micro-actuators was attempted. Aluminum specimens covered with porous type anodic oxide films were irradiated with a pulsed Nd-YAG laser to remove the oxide films locally, and then thin Ni layers were deposited at areas where film had been removed. Polypyrrole could be successfully deposited only on the Ni layer by anodic polarization of the specimens in pyrrole monomer solution, and a polypyrrole/Ni bilayer structure could be obtained by dissolution of the aluminum substrate and anodic oxide film in NaOH solutions. The bilayer structure was found to be inactive to doping and dedoping of ions during anodic and cathodic polarization. A three-layer structure, nitrocellulose/Ni/polypyrrole, fabricated by electrolytic polymerization after nitrocellulose coating on a Ni layer detached from the aluminum substrate, showed ion-doping and -dedoping activity, suggesting the possibility of fabricating micro-actuators in this manner.

  17. Oxidation films morphology

    International Nuclear Information System (INIS)

    Paidassi, J.

    1960-01-01

    After studying the oxidation of several pure polyvalent metals (Fe, Cu, Mn, Ni, U) and of their oxides at high temperature and atmospheric pressure, the author suggests how to modify the usual representation of the oxide film (a piling of different oxide layers, homogeneous on a micrographic scale with a equi-axial crystallisation, free of mechanical tensions, with flat boundary surfaces) to have it nearer to reality. In this first part, the author exposes the study of the real micrographic structure of the oxidation film and gives examples of precipitation in the oxides during the cooling of the oxidised sample. (author) [fr

  18. Optimization of synthesis protocols to control the nanostructure and the morphology of metal oxide thin films for memristive applications

    Energy Technology Data Exchange (ETDEWEB)

    Baldi, G., E-mail: giacomo.baldi@cnr.it; Bosi, M.; Attolini, G.; Berzina, T.; Mosca, R.; Ponraj, J. S.; Iannotta, S. [IMEM-CNR Institute, Parco Area delle Scienze 37/A, I-43124 Parma (Italy); Giusti, G.; Nozar, P.; Toccoli, T.; Verucchi, R. [IMEM-CNR Institute, Via alla Cascata 56/C, Povo – I-38123 Trento (Italy); Collini, C.; Lorenzelli, L. [FBK Bruno Kessler Foundation, Via Sommarive 18, I-38123 Trento (Italy)

    2015-03-10

    We propose a multi-technique approach based on in-vacuum synthesis of metal oxides to optimize the memristive properties of devices that use a metal oxide thin film as insulating layer. Pulsed Microplasma Cluster Source (PMCS) is based on supersonic beams seeded by clusters of the metal oxide. Nanocrystalline TiO{sub 2} thin films can be grown at room temperature, controlling the oxide stoichiometry from titanium metal up to a significant oxygen excess. Pulsed Electron beam Deposition (PED) is suitable to grow crystalline thin films on large areas, a step towards producing device arrays with controlled morphology and stoichiometry. Atomic Layer Deposition (ALD) is a powerful technique to grow materials layer-by-layer, finely controlling the chemical and structural properties of the film up to thickness of 50-80 nm. We will present a few examples of metal-insulator-metal structures showing a pinched hysteresis loop in their current-voltage characteristic. The structure, stoichiometry and morphology of the metal oxide layer, either aluminum oxide or titanium dioxide, is investigated by means of scanning electron microscopy (SEM) and by Raman scattering.

  19. Study on the fabrication of back surface reflectors in nano-crystalline silicon thin-film solar cells by using random texturing aluminum anodization

    Science.gov (United States)

    Shin, Kang Sik; Jang, Eunseok; Cho, Jun-Sik; Yoo, Jinsu; Park, Joo Hyung; Byungsung, O.

    2015-09-01

    In recent decades, researchers have improved the efficiency of amorphous silicon solar cells in many ways. One of the easiest and most practical methods to improve solar-cell efficiency is adopting a back surface reflector (BSR) as the bottom layer or as the substrate. The BSR reflects the incident light back to the absorber layer in a solar cell, thus elongating the light path and causing the so-called "light trapping effect". The elongation of the light path in certain wavelength ranges can be enhanced with the proper scale of BSR surface structure or morphology. An aluminum substrate with a surface modified by aluminum anodizing is used to improve the optical properties for applications in amorphous silicon solar cells as a BSR in this research due to the high reflectivity and the low material cost. The solar cells with a BSR were formed and analyzed by using the following procedures: First, the surface of the aluminum substrate was degreased by using acetone, ethanol and distilled water, and it was chemically polished in a dilute alkali solution. After the cleaning process, the aluminum surface's morphology was modified by using a controlled anodization in a dilute acid solution to form oxide on the surface. The oxidized film was etched off by using an alkali solution to leave an aluminum surface with randomly-ordered dimple-patterns of approximately one micrometer in size. The anodizing conditions and the anodized aluminum surfaces after the oxide layer had been removed were systematically investigated according to the applied voltage. Finally, amorphous silicon solar cells were deposited on a modified aluminum plate by using dc magnetron sputtering. The surfaces of the anodized aluminum were observed by using field-emission scanning electron microscopy. The total and the diffuse reflectances of the surface-modified aluminum sheets were measured by using UV spectroscopy. We observed that the diffuse reflectances increased with increasing anodizing voltage. The

  20. Optimization of Aluminum Anodization Conditions for the Fabrication of Nanowires by Electrodeposition

    Science.gov (United States)

    Fucsko, Viola

    2005-01-01

    Anodized alumina nanotemplates have a variety of potential applications in the development of nanotechnology. Alumina nanotemplates are formed by oxidizing aluminum film in an electrolyte solution.During anodization, aluminum oxidizes, and, under the proper conditions, nanometer-sized pores develop. A series of experiments was conducted to determine the optimal conditions for anodization. Three-micrometer thick aluminum films on silicon and silicon oxide substrates were anodized using constant voltages of 13-25 V. 0.1-0.3M oxalic acid was used as the electrolyte. The anodization time was found to increase and the overshooting current decreased as both the voltage and the electrolyte concentrations were decreased. The samples were observed under a scanning electron microscope. Anodizing with 25V in 0.3M oxalic acid appears to be the best process conditions. The alumina nanotemplates are being used to fabricate nanowires by electrodeposition. The current-voltage characteristics of copper nanowires have also been studied.

  1. Explosive compaction of aluminum oxide modified by multiwall carbon nanotubes

    Science.gov (United States)

    Buzyurkin, A. E.; Kraus, E. I.; Lukyanov, Ya L.

    2018-04-01

    This paper presents experiments and numerical research on explosive compaction of aluminum oxide powder modified by multiwall carbon nanotubes (MWCNT) and modeling of the stress state behind the shock front at shock loading. The aim of this study was to obtain a durable low-porosity compact sample. The explosive compaction technology is used in this problem because the aluminum oxide is an extremely hard and refractory material. Therefore, its compaction by traditional methods requires special equipment and considerable expenses.

  2. Photon energy response of an aluminum oxide TLD environmental dosimeter

    International Nuclear Information System (INIS)

    Olsher, R.H.

    1992-01-01

    Because of aluminum oxide's significant advantage in sensitivity (about a factor of 30) over LiF, minimal fading characteristics and ease of processing, aluminum oxide thermoluminescent dosimeters (TLDS) are being phased in at Los alamos for environmental monitoring of photon radiation. The new environmental dosimeter design consists of a polyethylene holder, about 0. 5 cm thick, loaded with a stack of four aluminum oxide TLD chips, each 1 mm thick and 5 mm in diameter. As part of the initial evaluation of the new design, the photon energy response of the dosimeter was calculated over the range from 10 keV to 1 MeV. Specific goals of the analysis included the determination of individual chip response in the stack, assessment of the response variation due to TLD material (i.e., LiF versus A1 2 O 3 ), and the effect of copper filtration in flattening the response

  3. Preparation and Surface Analysis of PPY/SDBS Films on Aluminum Substrates

    Directory of Open Access Journals (Sweden)

    Lisete C. Scienza

    2001-09-01

    Full Text Available Polypyrrole films were generated on high purity aluminum substrates under anodic polarization from aqueous electrolytes comprised of pyrrole and sodium dodecylbenzene sulfonate. The methods employed to characterize the polymer films included scanning electron microscopy, Fourier-transform infrared and X-photoelectron spectroscopy and X-ray diffraction. PPY/SDBS films revealed nodular morphology with occasional appearing of "dendrites", high level of protonation, excess of counter-anions ([S]/[N] > [N+]/[N] and high degrees of disorder.

  4. Effects of the wet air on the properties of the lanthanum oxide and lanthanum aluminate thin films

    International Nuclear Information System (INIS)

    Jun, Jin Hyung; Choi, Doo Jin

    2006-01-01

    Lanthanum oxide and lanthanum aluminate thin films were deposited on Si substrates. The as-grown films were stored in wet ambient and dry ambient for days and annealed after storage and also the structural and the electrical properties of the films were investigated. As the storage time increased, the La 2 O 3 films stored in wet ambient showed rapid reaction with moisture and the properties degraded. In case of the LAO films, although the thickness of the film also increased during hydration, the properties of the film did not so much changed due to the role of the incorporated aluminum. The LAO films showed better hydration resistance characteristics and so more suitable for conventional wet cleaning process in semiconductor fabrication

  5. Thermal Stress Behavior of Micro- and Nano-Size Aluminum Films

    International Nuclear Information System (INIS)

    Hanabusa, T.; Kusaka, K.; Nishida, M.

    2008-01-01

    In-situ observation of thermal stresses in thin films deposited on silicon substrate was made by X-ray and synchrotron radiation. Specimens prepared in this experiment were micro- and nano-size thin aluminum films with and without passivation film. The thickness of the film was 1 micrometer for micro-size films and 10, 20 and 50 nanometer for nano-size films. The stress measurement in micro-size films was made by X-ray radiation whereas the measurement of nano-size films was made by synchrotron radiation. Residual stress measurement revealed tensile stresses in all as-deposited films. Thermal stresses were measured in a series of heating- and cooling-stage. Thermal stress behavior of micro-size films revealed hysteresis loop during a heating and cooling process. The width of a hysteresis loop was larger in passivated film that unpassivated film. No hysteresis loops were observed in nano-size films with SiO 2 passivation. Strengthning mechanism in thin films was discussed on a passivation film and a film thickness

  6. Effect of intermetallic phases on the anodic oxidation and corrosion of 5A06 aluminum alloy

    Science.gov (United States)

    Li, Song-mei; Li, Ying-dong; Zhang, You; Liu, Jian-hua; Yu, Mei

    2015-02-01

    Intermetallic phases were found to influence the anodic oxidation and corrosion behavior of 5A06 aluminum alloy. Scattered intermetallic particles were examined by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) after pretreatment. The anodic film was investigated by transmission electron microscopy (TEM), and its corrosion resistance was analyzed by electrochemical impedance spectroscopy (EIS) and Tafel polarization in NaCl solution. The results show that the size of Al-Fe-Mg-Mn particles gradually decreases with the iron content. During anodizing, these intermetallic particles are gradually dissolved, leading to the complex porosity in the anodic film beneath the particles. After anodizing, the residual particles are mainly silicon-containing phases, which are embedded in the anodic film. Electrochemical measurements indicate that the porous anodic film layer is easily penetrated, and the barrier plays a dominant role in the overall protection. Meanwhile, self-healing behavior is observed during the long immersion time.

  7. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

    2013-05-01

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

  8. PLASMA POLYMER FILMS AS ADHESION PROMOTING PRIMERS FOR ALUMINUM SUBSTRATES. PART I: CHARACTERIZATION OF FILMS AND FILM/SUBSTRATE INTERFACES

    Science.gov (United States)

    Plasma polymerized hexamethyldisiloxane (HMDSO) films (~800 Å in thickness) were deposited onto aluminum substrates (6111-T4 alloy) in radio frequency (RF) and microwave (MW) powered reactors to be used as primers for structural adhesive bonding. Processing variables such as sub...

  9. Aluminum nitride and nanodiamond thin film microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Knoebber, Fabian; Bludau, Oliver; Roehlig, Claus-Christian; Williams, Oliver; Sah, Ram Ekwal; Kirste, Lutz; Cimalla, Volker; Lebedev, Vadim; Nebel, Christoph; Ambacher, Oliver [Fraunhofer-Institute for Applied Solid State Physics, Freiburg (Germany)

    2010-07-01

    In this work, aluminum nitride (AlN) and nanocrystalline diamond (NCD) thin film microstructures have been developed. Freestanding NCD membranes were coated with a piezoelectrical AlN layer in order to build tunable micro-lens arrays. For the evaluation of the single material quality, AlN and NCD thin films on silicon substrates were fabricated using RF magnetron sputtering and microwave chemical vapor deposition techniques, respectively. The crystal quality of AlN was investigated by X-ray diffraction. The piezoelectric constant d{sub 33} was determined by scanning laser vibrometry. The NCD thin films were optimized with respect to surface roughness, mechanical stability, intrinsic stress and transparency. To determine the mechanical properties of the materials, both, micromechanical resonator and membrane structures were fabricated and measured by magnetomotive resonant frequency spectroscopy and bulging experiments, respectively. Finally, the behavior of AlN/NCD heterostructures was modeled using the finite element method and the first structures were characterized by piezoelectrical measurements.

  10. Tensile strain effect in ferroelectric perovskite oxide thin films on spinel magnesium aluminum oxide substrate

    Science.gov (United States)

    Zhou, Xiaolan

    Ferroelectrics are used in FeRAM (Ferroelectric random-access memory). Currently (Pb,Zr)TiO3 is the most common ferroelectric material. To get lead-free and high performance ferroelectric material, we investigated perovskite ferroelectric oxides (Ba,Sr)TiO3 and BiFeO3 films with strain. Compressive strain has been investigated intensively, but the effects of tensile strain on the perovskite films have yet to be explored. We have deposited (Ba,Sr)TiO3, BiFeO3 and related films by pulsed laser deposition (PLD) and analyzed the films by X-ray diffractometry (XRD), atomic force microscopy (AFM), etc. To obtain inherently fully strained films, the selection of the appropriate substrates is crucial. MgAl2O4 matches best with good quality and size, yet the spinel structure has an intrinsic incompatibility to that of perovskite. We introduced a rock-salt structure material (Ni 1-xAlxO1+delta) as a buffer layer to mediate the structural mismatch for (Ba,Sr)TiO3 films. With buffer layer Ni1-xAlxO1+delta, we show that the BST films have high quality crystallization and are coherently epitaxial. AFM images show that the films have smoother surfaces when including the buffer layer, indicating an inherent compatibility between BST-NAO and NAO-MAO. In-plane Ferroelectricity measurement shows double hysteresis loops, indicating an antiferroelectric-like behavior: pinned ferroelectric domains with antiparallel alignments of polarization. The Curie temperatures of the coherent fully strained BST films are also measured. It is higher than 900°C, at least 800°C higher than that of bulk. The improved Curie temperature makes the use of BST as FeRAM feasible. We found that the special behaviors of ferroelectricity including hysteresis loop and Curie temperature are due to inherent fully tensile strain. This might be a clue of physics inside ferroelectric stain engineering. An out-of-plane ferroelectricity measurement would provide a full whole story of the tensile strain. However, a

  11. Electrochemical Thinning for Anodic Aluminum Oxide and Anodic Titanium Oxide

    Energy Technology Data Exchange (ETDEWEB)

    Lee, In Hae; Jo, Yun Kyoung; Kim, Yong Tae; Tak, Yong Sug; Choi, Jin Sub [Inha University, Incheon (Korea, Republic of)

    2012-05-15

    For given electrolytes, different behaviors of anodic aluminum oxide (AAO) and anodic titanium oxide (ATO) during electrochemical thinning are explained by ionic and electronic current modes. Branched structures are unavoidably created in AAO since the switch of ionic to electronic current is slow, whereas the barrier oxide in ATO is thinned without formation of the branched structures. In addition, pore opening can be possible in ATO if chemical etching is performed after the thinning process. The thinning was optimized for complete pore opening in ATO and potential-current behavior is interpreted in terms of ionic current-electronic current switching.

  12. Corrosion behavior of aluminum doped diamond-like carbon thin films in NaCl aqueous solution.

    Science.gov (United States)

    Khun, N W; Liu, E

    2010-07-01

    Aluminum doped diamond-like carbon (DLC:Al) thin films were deposited on n-Si(100) substrates by co-sputtering a graphite target under a fixed DC power (650 W) and an aluminum target under varying DC power (10-90 W) at room temperature. The structure, adhesion strength and surface morphology of the DLC:Al films were characterized by X-ray photoelectron spectroscopy (XPS), micro-scratch testing and atomic force microscopy (AFM), respectively. The corrosion performance of the DLC:Al films was investigated by means of potentiodynamic polarization testing in a 0.6 M NaCl aqueous solution. The results showed that the polarization resistance of the DLC:Al films increased from about 18 to 30.7 k(omega) though the corrosion potentials of the films shifted to more negative values with increased Al content in the films.

  13. An Analysis of Mechanical Properties of Anodized Aluminum Film at High Stress

    Science.gov (United States)

    Zhao, Xixi; Wei, Guoying; Yu, Yundan; Guo, Yuemei; Zhang, Ao

    2015-10-01

    In this paper, a new environmental-friendly electrolyte containing sulfuric acid and tartaric acid has been used as the substitute of chromic acid for anodization. The work discussed the influence of anodizing voltages on the fatigue life of anodized Al 2024-T3 by performing fatigue tests with 0.1 stress ratio (R) at 320 MPa. Meanwhile the fatigue cycles to failure, yield strength, tensile strength and fracture surface of anodic films at different conditions were investigated. The results showed that the fatigue life of anodized and sealed specimens reduced a lot compared to aluminum alloy, which can be attributed to the crack sites initiated at the oxide layer. The fracture surface analyses also revealed that the number of crack initiation sites enlarged with the increase of anodizing voltage.

  14. Aluminum oxide barrier coating on polyethersulfone substrate by atomic layer deposition for barrier property enhancement

    International Nuclear Information System (INIS)

    Kim, Hyun Gi; Kim, Sung Soo

    2011-01-01

    Aluminum oxide layers were deposited on flexible polyethersulfone (PES) substrates via plasma enhanced atomic layer deposition (PEALD) process using trimethylaluminum (TMA) and oxygen as precursor and reactant materials. Several process parameters in PEALD process were investigated in terms of refractive index and layer thickness. Number of process cycle increased the thickness and refractive index of the layer to enhance the barrier properties. Non-physisorbed TMA and unreacted oxygen were purged before and after the plasma reaction, respectively. Identical purge time was applied to TMA and oxygen and it was optimized for 10 s. Thinner and denser layer was formed as substrate temperature increased. However, the PES substrate could be deformed above 120 o C. Aluminum oxide layer formed on PES at optimized conditions have 11.8 nm of thickness and reduced water vapor transmission rate and oxygen transmission rate to below 4 x 10 -3 g/m 2 day and 4 x 10 -3 cm 3 /m 2 day, respectively. Polycarbonate and polyethylene naphthalate films were also tested at optimized conditions, and they also showed quite appreciable barrier properties to be used as plastic substrates.

  15. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  16. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  17. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Boltz, Janika

    2011-12-12

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post

  18. Electrosynthesized polyaniline for the corrosion protection of aluminum alloy 2024-T3

    Directory of Open Access Journals (Sweden)

    Huerta-Vilca Domingo

    2003-01-01

    Full Text Available Adherent polyaniline films on aluminum alloy 2024-T3 have been prepared by electrodeposition from aniline containing oxalic acid solution. The most appropriate method to prepare protective films was a successive galvanostatic deposition of 500 seconds. With this type of film, the open circuit potential of the coating shifted around 0.065V vs. SCE compared to the uncoated alloy. The polyaniline coatings can be considered as candidates to protect copper-rich (3 - 5% aluminum alloys by avoiding the galvanic couple between re-deposited copper on the surface and the bulk alloy. The performance of the polyaniline films was verified by immersion tests up to 2.5 months. It was good with formation of some aluminum oxides due to electrolyte permeation so, in order to optimize the performance a coating formulation would content an isolation topcoat.

  19. Progress in Nano-Engineered Anodic Aluminum Oxide Membrane Development

    Science.gov (United States)

    Poinern, Gerrard Eddy Jai; Ali, Nurshahidah; Fawcett, Derek

    2011-01-01

    The anodization of aluminum is an electro-chemical process that changes the surface chemistry of the metal, via oxidation, to produce an anodic oxide layer. During this process a self organized, highly ordered array of cylindrical shaped pores can be produced with controllable pore diameters, periodicity and density distribution. This enables anodic aluminum oxide (AAO) membranes to be used as templates in a variety of nanotechnology applications without the need for expensive lithographical techniques. This review article is an overview of the current state of research on AAO membranes and the various applications of nanotechnology that use them in the manufacture of nano-materials and devices or incorporate them into specific applications such as biological/chemical sensors, nano-electronic devices, filter membranes and medical scaffolds for tissue engineering. PMID:28880002

  20. Progress in Nano-Engineered Anodic Aluminum Oxide Membrane Development.

    Science.gov (United States)

    Poinern, Gerrard Eddy Jai; Ali, Nurshahidah; Fawcett, Derek

    2011-02-25

    The anodization of aluminum is an electro-chemical process that changes the surface chemistry of the metal, via oxidation, to produce an anodic oxide layer. During this process a self organized, highly ordered array of cylindrical shaped pores can be produced with controllable pore diameters, periodicity and density distribution. This enables anodic aluminum oxide (AAO) membranes to be used as templates in a variety of nanotechnology applications without the need for expensive lithographical techniques. This review article is an overview of the current state of research on AAO membranes and the various applications of nanotechnology that use them in the manufacture of nano-materials and devices or incorporate them into specific applications such as biological/chemical sensors, nano-electronic devices, filter membranes and medical scaffolds for tissue engineering.

  1. Progress in Nano-Engineered Anodic Aluminum Oxide Membrane Development

    Directory of Open Access Journals (Sweden)

    Gerrard Eddy Jai Poinern

    2011-02-01

    Full Text Available The anodization of aluminum is an electro-chemical process that changes the surface chemistry of the metal, via oxidation, to produce an anodic oxide layer. During this process a self organized, highly ordered array of cylindrical shaped pores can be produced with controllable pore diameters, periodicity and density distribution. This enables anodic aluminum oxide (AAO membranes to be used as templates in a variety of nanotechnology applications without the need for expensive lithographical techniques. This review article is an overview of the current state of research on AAO membranes and the various applications of nanotechnology that use them in the manufacture of nano-materials and devices or incorporate them into specific applications such as biological/chemical sensors, nano-electronic devices, filter membranes and medical scaffolds for tissue engineering.

  2. Reduced water vapor transmission rates of low-temperature solution-processed metal oxide barrier films via ultraviolet annealing

    Energy Technology Data Exchange (ETDEWEB)

    Park, Seonuk; Jeong, Yong Jin; Baek, Yonghwa; Kim, Lae Ho; Jang, Jin Hyuk; Kim, Yebyeol [POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784 (Korea, Republic of); An, Tae Kyu [Department of Polymer Science & Engineering, Korea National University of Transportation, 50 Daehak-Ro, Chungju (Korea, Republic of); Nam, Sooji, E-mail: sjnam15@etri.re.kr [Information Control Device Section, Electronics and Telecommunications Research Institute, Daejeon, 305-700 (Korea, Republic of); Kim, Se Hyun, E-mail: shkim97@yu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, North Gyeongsang 712-749 (Korea, Republic of); Jang, Jaeyoung, E-mail: jyjang15@hanyang.ac.kr [Department of Energy Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of); Park, Chan Eon, E-mail: cep@postech.ac.kr [POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784 (Korea, Republic of)

    2017-08-31

    Highlights: • Sol-gel-derived aluminum oxide thin films were prepared using ultraviolet (UV) annealing. • UV irradiation dramatically promoted the densification of AlO{sub x} during the annealing stage, thereby forming a close-packed AlO{sub x} film. • The resulting AlO{sub x} films deposited on polymer substrates exhibited good water vapor blocking properties with low water vapor transmission rates (WVTRs). - Abstract: Here, we report the fabrication of low-temperature sol-gel-derived aluminum oxide (AlO{sub x}) films via ultraviolet (UV) annealing and the investigation of their water vapor blocking properties by measuring the water vapor transmission rates (WVTRs). The UV annealing process induced the formation of a dense metal-oxygen-metal bond (Al-O-Al structure) at low temperatures (<200 °C) that are compatible with commercial plastic substrates. The density of the UV-annealed AlO{sub x} thin film at 180 °C was comparable to that of AlO{sub x} thin films that have been thermally annealed at 350 °C. Furthermore, the UV-annealed AlO{sub x} thin films exhibited a high optical transparency in the visible region (>99%) and good electrical insulating properties (∼10{sup −7} A/cm{sup 2} at 2 MV/cm). Finally, we confirmed that a dense AlO{sub x} thin film was successfully deposited onto the plastic substrate via UV annealing at low temperatures, leading to a substantial reduction in the WVTRs. The Ca corrosion test was used to measure the WVTRs of AlO{sub x} thin films deposited onto polyethylene naphthalate or polyimide substrates, determined to be 0.0095 g m{sup −2} day{sup −1} (25 °C, 50% relative humidity) and 0.26 g m{sup −2} day{sup −1}, respectively.

  3. Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films

    International Nuclear Information System (INIS)

    Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Lebedev, V; Nebel, C E; Ambacher, O; Williams, O A

    2013-01-01

    Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10 8 cm −2 ), in the case of hydrogen-treated ND seeding particles, to very high values of 10 11 cm −2 for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young’s moduli of more than 1000 GPa. (paper)

  4. Corrosion evaluation of zirconium doped oxide coatings on aluminum formed by plasma electrolytic oxidation.

    Science.gov (United States)

    Bajat, Jelena; Mišković-Stanković, Vesna; Vasilić, Rastko; Stojadinović, Stevan

    2014-01-01

    The plasma electrolytic oxidation (PEO) of aluminum in sodium tungstate (Na(2)WO(4) · (2)H(2)O) and Na(2)WO(4) · (2)H(2)O doped with Zr was analyzed in order to obtain oxide coatings with improved corrosion resistance. The influence of current density in PEO process and anodization time was investigated, as well as the influence of Zr, with the aim to find out how they affect the chemical content, morphology, surface roughness, and corrosion stability of oxide coatings. It was shown that the presence of Zr increases the corrosion stability of oxide coatings for all investigated PEO times. Evolution of EIS spectra during the exposure to 3% NaCl, as a strong corrosive agent, indicated the highest corrosion stability for PEO coating formed on aluminum at 70 mA/cm(2) for 2 min in a zirconium containing electrolyte.

  5. Field emission properties of low-density carbon nanotubes prepared on anodic aluminum-oxide template

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Soo-Hwan [Samsung Advanced Institute of Technology, Suwon (Korea, Republic of); Lee, Kun-Hong [Pohang University of Science and Technology, Pohang (Korea, Republic of)

    2004-08-15

    Anodic aluminum-oxide (AAO) templates were fabricated by two-step anodizing an Al film. After the Co catalyst had been electrochemically deposited onto the bottom of the AAO template, carbon nanotubes (CNTs) were grown by using catalytic pyrolysis of C{sub 2}H{sub 2} and H{sub 2} at 650 .deg. C. Overgrowth of CNTs with low density on the AAO templates was observed. The field-emission measurements on the samples showed a turn-on field of 2.17 V/mum and a field enhancement factor of 5700. The emission pattern on a phosphor screen was quite homogeneous over the area at a relatively low electric field.

  6. Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment

    International Nuclear Information System (INIS)

    Lim, Taekyung; Kim, Dongchool; Ju, Sanghyun

    2013-01-01

    Deposition of high-quality dielectric on a graphene channel is an essential technology to overcome structural constraints for the development of nano-electronic devices. In this study, we investigated a method for directly depositing aluminum oxide (Al 2 O 3 ) on a graphene channel through nitrogen plasma treatment. The deposited Al 2 O 3 thin film on graphene demonstrated excellent dielectric properties with negligible charge trapping and de-trapping in the gate insulator. A top-gate-structural graphene transistor was fabricated using Al 2 O 3 as the gate dielectric with nitrogen plasma treatment on graphene channel region, and exhibited p-type transistor characteristics

  7. Measurement of quasiparticle transport in aluminum films using tungsten transition-edge sensors

    International Nuclear Information System (INIS)

    Yen, J. J.; Shank, B.; Cabrera, B.; Moffatt, R.; Redl, P.; Young, B. A.; Tortorici, E. C.; Brink, P. L.; Cherry, M.; Tomada, A.; Kreikebaum, J. M.

    2014-01-01

    We report on experimental studies of phonon sensors which utilize quasiparticle diffusion in thin aluminum films connected to tungsten transition-edge-sensors (TESs) operated at 35 mK. We show that basic TES physics and a simple physical model of the overlap region between the W and Al films in our devices enables us to accurately reproduce the experimentally observed pulse shapes from x-rays absorbed in the Al films. We further estimate quasiparticle loss in Al films using a simple diffusion equation approach. These studies allow the design of phonon sensors with improved performance.

  8. Growth and characterization of tris(8-hydroxyquinoline)-aluminum molecular films

    Energy Technology Data Exchange (ETDEWEB)

    Jan, Da-Jeng; Wang, Sheng-Shin; Tang, Shiow-Jing; Lin, Ku-Yen; Yang, Jiun-Jie; Shen, Ji-Lin; Chiu, Kuan-Cheng, E-mail: kcchiu@cycu.edu.tw

    2011-11-30

    Various tris(8-hydroxyquinoline)-aluminum (Alq3) molecular solid films were grown on top of indium-tin-oxide (ITO) glass substrates using physical vapor deposition. The effect of changing the growth conditions on the properties of the films was studied. From scanning electron microscopy, an Alq3 planar layer over an ITO-substrate was observed at the initial period, and an Alq3 tubular structure (which becomes dominant at substrate temperature T{sub sub} Greater-Than-Over-Equal-To 90 Degree-Sign C) was found to nucleate from this layer. From X-ray diffraction, the Alq3 planar layer possesses an amorphous character while the Alq3 tubular layer has a triclinic {alpha}-phase structure. Based on an Arrhenius plot of the growth rate versus 1/T{sub sub}, the growth behaviors in various T{sub sub}-regions were discussed to be dominated by adhesion (for T{sub sub} < 90 Degree-Sign C), steric effect (90 Degree-Sign C < T{sub sub} < 150 Degree-Sign C), and re-evaporation (T{sub sub} > 150 Degree-Sign C). Then, from optical transmission and photoluminescence spectra performed on the high crystalline Alq3 films, two signals associated with the optical-bandgap E{sub g} absorption and the gap-state absorption were determined and discussed in terms of the optical properties of the constituent Alq3 molecules. Finally, from a fit of E{sub g}(T) by an effective electron-phonon interaction model, the physical significance of these fitting parameters for the Alq3 molecular solid was investigated.

  9. Fabrication of CoPd alloy nanowire arrays on an anodic aluminum oxide/Ti/Si substrate and their enhanced magnetic properties

    International Nuclear Information System (INIS)

    Xu Cailing; Li Hua; Xue Tong; Li Hulin

    2006-01-01

    An anodic aluminum oxide/Ti/Si substrate was successfully synthesized by the anodization of an aluminum film on a Ti/Si substrate and then used as a template to grow 10 nm diameter CoPd alloy nanowires. X-ray diffraction and energy-dispersed X-ray patterns indicated that Co 0.97 Pd 0.03 nanowire arrays with a preferential orientation of (0 0 2) were formed during electrodeposition. High coercivity (about 1700 Oe) and squareness (about 0.85) were obtained in the samples when the magnetic field was applied parallel to the axis of the nanowires; these values are much larger than those of pure Co nanowire arrays with the same diameters

  10. Effect of argon ion beam voltages on the microstructure of aluminum nitride films prepared at room temperature by a dual ion beam sputtering system

    International Nuclear Information System (INIS)

    Chen, H.-Y.; Han Sheng; Cheng, C.-H.; Shih, H.C.

    2004-01-01

    Aluminum nitride (AlN) films were successfully deposited at room temperature onto p-type (1 0 0) silicon wafers by manipulating argon ion beam voltages in a dual ion beam sputtering (DIBS). X-ray diffraction spectra showed that aluminum nitride films could be synthesized above 800 V. The (0 0 2) orientation was dominant at 800 V, above which the orientation was random. The atomic force microscope (AFM) images displayed a relatively smooth surface with the root-mean-square roughness of 2-3 nm, where this roughness decreased with argon ion beam voltage. The Al 2p 3/2 and N 1s spectra indicated that both the aluminum-aluminum bond and aluminum-nitrogen bond appeared at 600 V, above which only the aluminum-nitrogen bond was detected. Moreover, the atomic concentration in aluminum nitride films was concentrated in aluminum-rich phases in all cases. Nevertheless, the aluminum concentration markedly increased with argon ion beam voltages below 1000 V, above which the concentration decreased slightly. The correlation between the microstructure of aluminum nitride films and argon ion beam voltages is also discussed

  11. Angular dependence of preferential sputtering and composition in aluminum--copper thin films

    International Nuclear Information System (INIS)

    Rudeck, P.J.; Harper, J.M.E.; Fryer, P.M.

    1989-01-01

    The copper concentration in aluminum--copper alloys can be altered by ion bombardment during film deposition. We have measured the sputtering yields of aluminum and copper in Al--Cu alloys as a function of the Cu concentration (5--13 at. %) and the angle of ion incidence (0--40 0 from normal). During deposition, the films were partially resputtered by 500-eV Ar + ion bombardment from a Kaufman ion source. We found that the Cu sputtering yield decreases by up to a factor of 10 in the alloy, relative to elemental Cu. The Al sputtering yield remains close to the elemental value. The net effect is a strong preferential sputtering of Al relative to Cu, which enhances the Cu concentration in an ion bombarded film. The Al/Cu sputtering yield ratio for normal incidence ion bombardment ranges from 3 to 5 as a function of Cu concentration. This ratio decreases with increasing angle of incidence to as low as 2 for 40 0 incident ions. However, since a higher fraction of the film is resputtered from a sloping surface, a higher Cu concentration is found on a sloping surface relative to a flat surface. These results show that in multicomponent film deposition under ion bombardment, the film composition will vary as a function of the surface topography. We will also show how the level of argon left trapped in the films varies inversely with respect to the ion flux

  12. Monolithic Approach to Oxide Dispersion Strengthened Aluminum, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Nassau Stern Company is investigating an approach for manufacturing oxide dispersion strengthened (ODS) aluminum in bulk rather than powder form. The approach...

  13. Fabrication and characterization of conductive anodic aluminum oxide substrates

    Science.gov (United States)

    Altuntas, Sevde; Buyukserin, Fatih

    2014-11-01

    Biomaterials that allow the utilization of electrical, chemical and topographic cues for improved neuron-material interaction and neural regeneration hold great promise for nerve tissue engineering applications. The nature of anodic aluminum oxide (AAO) membranes intrinsically provides delicate control over topographic and chemical cues for enhanced cell interaction; however their use in nerve regeneration is still very limited. Herein, we report the fabrication and characterization of conductive AAO (CAAO) surfaces for the ultimate goal of integrating electrical cues for improved nerve tissue behavior on the nanoporous substrate material. Parafilm was used as a protecting polymer film, for the first time, in order to obtain large area (50 cm2) free-standing AAO membranes. Carbon (C) was then deposited on the AAO surface via sputtering. Morphological characterization of the CAAO surfaces revealed that the pores remain open after the deposition process. The presence of C on the material surface and inside the nanopores was confirmed by XPS and EDX studies. Furthermore, I-V curves of the surface were used to extract surface resistance values and conductive AFM demonstrated that current signals can only be achieved where conductive C layer is present. Finally, novel nanoporous C films with controllable pore diameters and one dimensional (1-D) C nanostructures were obtained by the dissolution of the template AAO substrate.

  14. Dynamics of Oxidation of Aluminum Nanoclusters using Variable Charge Molecular-Dynamics Simulations on Parallel Computers

    Science.gov (United States)

    Campbell, Timothy; Kalia, Rajiv K.; Nakano, Aiichiro; Vashishta, Priya; Ogata, Shuji; Rodgers, Stephen

    1999-06-01

    Oxidation of aluminum nanoclusters is investigated with a parallel molecular-dynamics approach based on dynamic charge transfer among atoms. Structural and dynamic correlations reveal that significant charge transfer gives rise to large negative pressure in the oxide which dominates the positive pressure due to steric forces. As a result, aluminum moves outward and oxygen moves towards the interior of the cluster with the aluminum diffusivity 60% higher than that of oxygen. A stable 40 Å thick amorphous oxide is formed; this is in excellent agreement with experiments.

  15. Highly selective single-use fluoride ion optical sensor based on aluminum(III)-salen complex in thin polymeric film

    International Nuclear Information System (INIS)

    Badr, Ibrahim H.A.; Meyerhoff, Mark E.

    2005-01-01

    A highly selective optical sensor for fluoride ion based on the use of an aluminum(III)-salen complex as an ionophore within a thin polymeric film is described. The sensor is prepared by embedding the aluminum(III)-salen ionophore and a suitable lipophilic pH-sensitive indicator (ETH-7075) in a plasticized poly(vinyl chloride) (PVC) film. Optical response to fluoride occurs due to fluoride extraction into the polymer via formation of a strong complex with the aluminum(III)-salen species. Co-extraction of protons occurs simultaneously, with protonation of the indicator dye yielding the optical response at 529 nm. Films prepared using dioctylsebacate (DOS) are shown to exhibit better response (e.g., linear range, detection limit, and optical signal stability) compared to those prepared using ortho-nitrophenyloctyl ether (o-NPOE). Films formulated with aluminum(III)-salen and ETH-7075 indicator in 2 DOS:1 PVC, exhibit a significantly enhanced selectivity for fluoride over a wide range of lipophilic anions including salicylate, perchlorate, nitrate, and thiocyanate. The optimized films exhibit a sub-micromolar detection limit, using glycine-phosphate buffer, pH 3.00, as the test sample. The response times of the fluoride optical sensing films are in the range of 1-10 min depending on the fluoride ion concentration in the sample. The sensor exhibits very poor reversibility owing to a high co-extraction constant (log K = 8.5 ± 0.4), indicating that it can best be employed as a single-use transduction device. The utility of the aluminum(III)-salen based fluoride sensitive films as single-use sensors is demonstrated by casting polymeric films on the bottom of standard polypropylene microtiter plate wells (96 wells/plate). The modified microtiter plate optode format sensors exhibit response characteristics comparable to the classical optode films cast on quartz slides. The modified microtiter is utilized for the analysis of fluoride in diluted anti-cavity fluoride rinse

  16. In situ anodization of aluminum surfaces studied by x-ray reflectivity and electrochemical impedance spectroscopy

    International Nuclear Information System (INIS)

    Bertram, F.; Evertsson, J.; Messing, M. E.; Mikkelsen, A.; Lundgren, E.; Zhang, F.; Pan, J.; Carlà, F.; Nilsson, J.-O.

    2014-01-01

    We present results from the anodization of an aluminum single crystal [Al(111)] and an aluminum alloy [Al 6060] studied by in situ x-ray reflectivity, in situ electrochemical impedance spectroscopy and ex situ scanning electron microscopy. For both samples, a linear increase of oxide film thickness with increasing anodization voltage was found. However, the slope is much higher in the single crystal case, and the break-up of the oxide film grown on the alloy occurs at a lower anodization potential than on the single crystal. The reasons for these observations are discussed as are the measured differences observed for x-ray reflectivity and electrochemical impedance spectroscopy.

  17. Penetrating the oxide barrier in situ and separating freestanding porous anodic alumina films in one step.

    Science.gov (United States)

    Tian, Mingliang; Xu, Shengyong; Wang, Jinguo; Kumar, Nitesh; Wertz, Eric; Li, Qi; Campbell, Paul M; Chan, Moses H W; Mallouk, Thomas E

    2005-04-01

    A simple method for penetrating the barrier layer of an anodic aluminum oxide (AAO) film and for detaching the AAO film from residual Al foil was developed by reversing the bias voltage in situ after the anodization process is completed. With this technique, we have been able to obtain large pieces of free-standing AAO membranes with regular pore sizes of sub-10 nm. By combining Ar ion milling and wetting enhancement processes, Au nanowires were grown in the sub-10 nm pores of the AAO films. Further scaling down of the pore size and extension to the deposition of nanowires and nanotubes of materials other than Au should be possible by further optimizing this procedure.

  18. Stabilized chromium oxide film

    Science.gov (United States)

    Garwin, Edward L.; Nyaiesh, Ali R.

    1988-01-01

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  19. Scanning probe studies of water nucleation on aluminum oxide and gold surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Missert, N. [Sandia National Laboratories, Albuquerque, NM 87185-1415 (United States)], E-mail: namisse@sandia.gov; Copeland, R.G. [Sandia National Laboratories, Albuquerque, NM 87185-1415 (United States)

    2008-01-30

    The nucleation of nanoscale water at surfaces in humid environments is sensitive to several factors, including the details of the surface morphology, ability of the surface to hydrate and the presence of contaminants. Tapping mode atomic force microscopy was used to investigate the nucleation process as a function of relative humidity (RH) on passive aluminum and gold thin films. Films exposed to the ambient environment prior to RH exposure showed discrete structures with lateral sizes ranging from 10 to 100 nm only at RH > 70%. These structures formed preferentially at grain boundaries, triple points and regions with significant topography such as protruding grains. The morphology of the passive aluminum surface is permanently altered at the sites where discrete structures were observed; nodules with heights ranging from 0.5 to 2 nm persist even after reducing the RH to <2%. The gold surface does not show such a permanent change in morphology after reducing the RH. Passive aluminum films exposed to high RH immediately after growth (e.g. no ambient exposure) do not show discrete structures even at the highest RH exposures of 90%, suggesting a hydrophilic surface and the importance of surface hydrocarbon contaminants in affecting the distribution of the water layer.

  20. Scanning probe studies of water nucleation on aluminum oxide and gold surfaces

    International Nuclear Information System (INIS)

    Missert, N.; Copeland, R.G.

    2008-01-01

    The nucleation of nanoscale water at surfaces in humid environments is sensitive to several factors, including the details of the surface morphology, ability of the surface to hydrate and the presence of contaminants. Tapping mode atomic force microscopy was used to investigate the nucleation process as a function of relative humidity (RH) on passive aluminum and gold thin films. Films exposed to the ambient environment prior to RH exposure showed discrete structures with lateral sizes ranging from 10 to 100 nm only at RH > 70%. These structures formed preferentially at grain boundaries, triple points and regions with significant topography such as protruding grains. The morphology of the passive aluminum surface is permanently altered at the sites where discrete structures were observed; nodules with heights ranging from 0.5 to 2 nm persist even after reducing the RH to <2%. The gold surface does not show such a permanent change in morphology after reducing the RH. Passive aluminum films exposed to high RH immediately after growth (e.g. no ambient exposure) do not show discrete structures even at the highest RH exposures of 90%, suggesting a hydrophilic surface and the importance of surface hydrocarbon contaminants in affecting the distribution of the water layer

  1. Development of topologically structured membranes of aluminum oxide

    Science.gov (United States)

    Bankova, A.; Videkov, V.; Tzaneva, B.

    2014-05-01

    In recent years, nanomembranes have become one of the most widely used construction material for ultrasensitive and ultrathin applications in micro-electromechanical systems (MEMS) and other sensor structures due to their remarkable mechanical properties. Among these, the mechanical stability is of particular importance. We present an approach to the analysis of the stability of nanostructured anodic aluminum oxide free membranes subjected to mechanical bending. The membranes tested were with a thickness of 500 nm to 15 urn in various topological shapes; we describe the technological schemes of their preparation. Bends were applied to membranes prepared by using a selective process of etching and anodizing. The results of the preparation of the membranes are discussed, together with the influence of the angle of deflection, and the number of bendings. The results obtained can be used in designing MEMS structures and sensors which use nanostructured anodic aluminum oxide.

  2. Development of topologically structured membranes of aluminum oxide

    International Nuclear Information System (INIS)

    Bankova, A; Videkov, V; Tzaneva, B

    2014-01-01

    In recent years, nanomembranes have become one of the most widely used construction material for ultrasensitive and ultrathin applications in micro-electromechanical systems (MEMS) and other sensor structures due to their remarkable mechanical properties. Among these, the mechanical stability is of particular importance. We present an approach to the analysis of the stability of nanostructured anodic aluminum oxide free membranes subjected to mechanical bending. The membranes tested were with a thickness of 500 nm to 15 urn in various topological shapes; we describe the technological schemes of their preparation. Bends were applied to membranes prepared by using a selective process of etching and anodizing. The results of the preparation of the membranes are discussed, together with the influence of the angle of deflection, and the number of bendings. The results obtained can be used in designing MEMS structures and sensors which use nanostructured anodic aluminum oxide.

  3. Novel texturing method for sputtered zinc oxide films prepared at high deposition rate from ceramic tube targets

    Directory of Open Access Journals (Sweden)

    Hüpkes J.

    2011-10-01

    Full Text Available Sputtered and wet-chemically texture etched zinc oxide (ZnO films on glass substrates are regularly applied as transparent front contact in silicon based thin film solar cells. In this study, chemical wet etching in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl on aluminum doped zinc oxide (ZnO:Al films deposited by magnetron sputtering from ceramic tube targets at high discharge power (~10 kW/m target length is investigated. Films with thickness of around 800 nm were etched in diluted HCl acid and HF acid to achieve rough surface textures. It is found that the etching of the films in both etchants leads to different surface textures. A two steps etching process, which is especially favorable for films prepared at high deposition rate, was systematically studied. By etching first in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl these films are furnished with a surface texture which is characterized by craters with typical diameter of around 500 − 1000 nm. The resulting surface structure is comparable to etched films sputtered at low deposition rate, which had been demonstrated to be able to achieve high efficiencies in silicon thin film solar cells.

  4. Fabrication of cerium-doped yttrium aluminum garnet thin films by a mist CVD method

    Energy Technology Data Exchange (ETDEWEB)

    Murai, Shunsuke, E-mail: murai@dipole7.kuic.kyoto-u.ac.jp; Sato, Takafumi; Yao, Situ; Kamakura, Ryosuke; Fujita, Koji; Tanaka, Katsuhisa

    2016-02-15

    We synthesized thin films, consisting of yttrium aluminum garnet doped with Ce{sup 3+} (YAG:Ce), using the mist chemical vapor deposition (CVD) method, which allows the fabrication of high-quality thin films under atmospheric conditions without the use of vacuum equipment. Under a deposition rate of approximately 1 μm/h, the obtained thin films had a typical thickness of 2 μm. The XRD analysis indicated that the thin films consisted of single-phase YAG:Ce. The Rutherford backscattering confirmed the stoichiometry; the composition of the film was determined to be (Y, Ce){sub 3}Al{sub 5}O{sub 12}, with a Ce content of Ce/(Y+Ce)=2.5%. The YAG:Ce thin films exhibited fluorescence due to the 5d–4f electronic transitions characteristic of the Ce ions occupying the eight-coordinated dodecahedral sites in the YAG lattice. - Highlights: • We have synthesized thin films of yttrium aluminum garnet doped with Ce{sup 3+} (YAG:Ce) by using a mist chemical vapor deposition (CVD) method for the first time. • The thickness of the single-phase and stoichiometric thin film obtained by 2 h deposition and following heat treatments is 2 μm. • The thin film is porous but optically transparent, and shows yellow fluorescence upon irradiation with a blue light. • Mist-CVD is a green and sustainable technique that allows fabrication of high-quality thin films at atmospheric conditions without vacuum equipment.

  5. Direct current-induced electrogenerated chemiluminescence of hydrated and chelated Tb(III) at aluminum cathodes

    International Nuclear Information System (INIS)

    Hakansson, M.; Jiang, Q.; Spehar, A.-M.; Suomi, J.; Kotiranta, M.; Kulmala, S.

    2005-01-01

    Cathodic DC polarization of oxide-covered aluminum produces electrogenerated chemiluminescence from hydrated and chelated Tb(III) ions in aqueous electrolyte solutions. At the moment of cathodic voltage onset, a strong cathodic flash is observed, which is attributed to a tunnel emission of hot electrons into the aqueous electrolyte solution and the successive chemical reactions with the luminophores. However, within a few milliseconds the insulating oxide film is damaged and finally dissolved due to (i) indiffusion of protons or alkali metal ions into the thin oxide film, (ii) subsequent hydrogen evolution at the aluminum/oxide interface and (iii) alkalization of the electrode surface induced by hydrogen evolution reaction. When the alkalization of the electrode surface has proceeded sufficiently, chemiluminescence is generated with increasing intensity. Aluminum metal, short-lived Al(II), Al(I) or atomic hydrogen and its conjugated base form, hydrated electron, can act as highly reducing species in addition to the less energetic heterogeneously transferred electrons from the aluminum electrode. Tb(III) added as a hydrated ion in the solution probably luminesces in the form of Tb(OH) 3 or Tb(OH) 4 - by direct redox reactions of the central ion whereas multidentate aromatic ligand chelated Tb(III) probably luminesces by ligand sensitized chemiluminescence mechanism in which ligand is first excited by one-electron redox reactions, which is followed by intramolecular energy transfer to the central ion which finally emits light

  6. Dielectric breakdown of ultrathin aluminum oxide films induced by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Magtoto, N. P.; Niu, C.; Ekstrom, B. M.; Addepalli, S.; Kelber, J. A.

    2000-01-01

    Dielectric breakdown of 7-Aa-thick Al 2 O 3 (111) films grown on Ni 3 Al(111) under ultrahigh vacuum conditions is induced by increasing the bias voltage on the scanning tunneling microscopy tip under constant current feedback. Breakdown is marked by the precipitous retreat of the tip from the surface, and the formation of an elevated feature in the scanning tunneling microscopy image, typically greater than 5 nm high and ∼100 nm in diameter. Constant height measurements performed at tip/sample distances of 1 nm or less yield no tip/substrate physical interaction, indicating that such features do not result from mass transport. Consistent with this, current/voltage measurements within the affected regions indicate linear behavior, in contrast to a band gap of 1.5 eV observed at unaffected regions of the oxide surface. A threshold electric field value of 11±1 MV cm -1 is required to induce breakdown, in good agreement with extrapolated values from capacitance measurements on thicker oxides. (c) 2000 American Institute of Physics

  7. Characterization of injected aluminum oxide nanoparticle clouds in an rf discharge

    Science.gov (United States)

    Krüger, Harald; Killer, Carsten; Schütt, Stefan; Melzer, André

    2018-02-01

    An experimental setup to deagglomerate and insert nanoparticles into a radio frequency discharge has been developed to confine defined aluminum oxide nanoparticles in a dusty plasma. For the confined particle clouds we have measured the spatially resolved in situ size and density distributions. Implementing the whole plasma chamber into the sample volume of an FTIR spectrometer the infrared spectrum of the confined aluminum oxide nanoparticles has been obtained. We have investigated the dependency of the absorbance of the nanoparticles in terms of plasma power, pressure and cloud shape. The particles’ infrared phonon resonance has been identified.

  8. Improved corrosion resistance on biodegradable magnesium by zinc and aluminum ion implantation

    Science.gov (United States)

    Xu, Ruizhen; Yang, Xiongbo; Suen, Kai Wong; Wu, Guosong; Li, Penghui; Chu, Paul K.

    2012-12-01

    Magnesium and its alloys have promising applications as biodegradable materials, and plasma ion implantation can enhance the corrosion resistance by modifying the surface composition. In this study, suitable amounts of zinc and aluminum are plasma-implanted into pure magnesium. The surface composition, phases, and chemical states are determined, and electrochemical tests and electrochemical impedance spectroscopy (EIS) are conducted to investigate the surface corrosion behavior and elucidate the mechanism. The corrosion resistance enhancement after ion implantation is believed to stem from the more compact oxide film composed of magnesium oxide and aluminum oxide as well as the appearance of the β-Mg17Al12 phase.

  9. Effect of processing on structural features of anodic aluminum oxides

    Science.gov (United States)

    Erdogan, Pembe; Birol, Yucel

    2012-09-01

    Morphological features of the anodic aluminum oxide (AAO) templates fabricated by electrochemical oxidation under different processing conditions were investigated. The selection of the polishing parameters does not appear to be critical as long as the aluminum substrate is polished adequately prior to the anodization process. AAO layers with a highly ordered pore distribution are obtained after anodizing in 0.6 M oxalic acid at 20 °C under 40 V for 5 minutes suggesting that the desired pore features are attained once an oxide layer develops on the surface. While the pore features are not affected much, the thickness of the AAO template increases with increasing anodization treatment time. Pore features are better and the AAO growth rate is higher at 20 °C than at 5 °C; higher under 45 V than under 40 V; higher with 0.6 M than with 0.3 M oxalic acid.

  10. Radiation induced defects and thermoluminescence mechanism in aluminum oxide

    Energy Technology Data Exchange (ETDEWEB)

    Atobe, K.; Kobayashi, T.; Awata, T. [Naruto Univ. of Education, Tokushima (Japan); Okada, M. [Kyoto Univ., Kumatori, Osaka (Japan). Research Reactor Inst; Nakagawa, M. [Kagawa Univ., Faculty of Education, Takamatsu, Kagawa (Japan)

    2001-01-01

    The thermoluminescence of the irradiated aluminum oxides were measured to study the radiation induced defects and their behaviors. Neutron and {gamma}-ray irradiation were performed for a shingle crystal of the high purity aluminum oxide. The thermoluminescence glow curve and its activation energy were measured. The spectroscopy measurement on the thermoluminescence and the absorption are also carried out. The observed 430 and 340 nm peaks are discussed relating to the F{sup +} and F centers, respectively. Activation state of the F center transits to 3P state through 1P state by emitting phonons. Trapped electron on 3P state emits phonon of 2.9 eV (430 nm) during transition to the ground state. The above reaction can be written by the equation. F{sup +} + e {yields} (F){sup *} {yields} F + h{nu}(2.9 eV, 470 nm). (Katsuta, H.)

  11. Fabrication and RF characterization of zinc oxide based Film Bulk Acoustic Resonator

    Science.gov (United States)

    Patel, Raju; Bansal, Deepak; Agrawal, Vimal Kumar; Rangra, Kamaljit; Boolchandani, Dharmendar

    2018-06-01

    This work reports fabrication and characterization of Film Bulk Acoustic Resonator (FBAR) to improve the performance characteristics for RF filter and sensing application. Zinc oxide as a piezoelectric (PZE) material was deposited on an aluminum bottom electrode using an RF magnetron sputtering, at room temperature, and gold as top electrode for the resonator. Tetramethyl ammonium hydroxide (TMAH) setup was used for bulk silicon etching to make back side cavity to confine the acoustic signals. The transmission characteristics show that the FBARs have a central frequency at 1.77 GHz with a return loss of -10.7 dB.

  12. Influence of surface treatment on the biocompatibility of aluminum substrates promising for medical application

    Energy Technology Data Exchange (ETDEWEB)

    Kiradzhiyska, D. D., E-mail: denica.kiradjiiska@gmail.com; Mantcheva, R. D., E-mail: r-manch@abv.bg [Medical University - Plovdiv, Faculty of Pharmacy, Department of Chemical Science15A Vassil Aprilov blvd., 4002 Plovdiv (Bulgaria); Feodorova, Y. N.; Draganov, M. M. [Medical University - Plovdiv, Medical Faculty, Department of Medical Biology, 15A Vassil Aprilov blvd., 4002 Plovdiv (Bulgaria); Girginov, Ch. A. [University of Chemical Technology and Metallurgy -Sofia, Department of Chemical Science, Subdepartment of Physical Chemistry, 8 Kliment Ohridski Blvd. 1756 Sofia (Bulgaria); Viraneva, A. P.; Yovcheva, T. A. [University of Plovdiv “Paisiy Hilendarski”, Faculty of Physics, Department of Experimental Physic, 24 Tsar Assen str., 4000 Plovdiv (Bulgaria)

    2016-03-25

    Materials for medical implants should have suitable mechanical properties, excellent biocompatibility and high corrosion resistance. They should not stimulate allergic and immunologic reactions and should not cause cancer. The use of aluminum as a construction material in implantology is continuously expanding. There are various methods for surface treatment to improve its biocompatibility. In this study aluminum samples anodized in 15% H{sub 2} SO{sub 4} or treated with positive or negative corona discharge were investigated. PDL-cell line of immortalized cells, precursors of periodontal ligament and RAW 264.7 cell line from mouse macrophages are used for the bioassays. The results show that 10 and 20 μm thick oxide film provides better development of the PLD cells, compared to untreated aluminum. Metal surfaces with 10 μm thick oxide film show the best properties in terms of cells vitality, proliferation and growth. Polymer treated but uncharged samples show good results.

  13. Pattern formation under residual compressive stress in free sustained aluminum films

    International Nuclear Information System (INIS)

    Yu Senjiang; Ye Quanlin; Zhang Yongju; Cai Pinggen; Xu Xiaojun; Chen Jiangxing; Ye Gaoxiang

    2005-01-01

    A nearly free sustained aluminum (Al) film system has been successfully fabricated by vapor phase deposition of Al atoms on silicone oil surfaces and an unusual type of ordered patterns at the micrometer scale has been systematically studied. The ordered patterns are composed of a large number of parallel key-shaped domains and possess a sandwiched structure. The nucleation and growth of the patterns are very susceptible to the growth period, deposition rate, nominal film thickness and location of the film. The experiment shows that the ordered patterns are induced by the residual compressive stress in the film owing to contraction of the liquid surface after deposition. The appearance of these stress relief patterns generally represents the stress distribution in the nearly free sustained Al films, which mainly results from the characteristic boundary condition and the nearly zero adhesion of the solid-liquid interface

  14. Preparations, Properties, and Applications of Periodic Nano Arrays using Anodized Aluminum Oxide and Di-block Copolymer

    Science.gov (United States)

    Noh, Kunbae

    2011-12-01

    Self-ordered arrangements observed in various materials systems such as anodic aluminum oxide, polystyrene nanoparticles, and block copolymer are of great interest in terms of providing new opportunities in nanofabrication field where lithographic techniques are broadly used in general. Investigations on self-assembled nano arrays to understand how to obtain periodic nano arrays in an efficient yet inexpensive way, and how to realize advanced material and device systems thereof, can lead to significant impacts on science and technology for many forefront device applications. In this thesis, various aspects of periodic nano-arrays have been discussed including novel preparations, properties and applications of anodized aluminum oxide (AAO) and PS-b-P4VP (S4VP) di-block copolymer self-assembly. First, long-range ordered AAO arrays have been demonstrated. Nanoimprint lithography (NIL) process allowed a faithful pattern transfer of the imprint mold pattern onto Al thin film, and interesting self-healing and pattern tripling phenomena were observed, which could be applicable towards fabrication of the NIL master mold having highly dense pattern over large area, useful for fabrication of a large-area substrate for predictable positioning of arrayed devices. Second, S4VP diblock copolymer self-assembly and S4VP directed AAO self-assembly have been demonstrated in the Al thin film on Si substrate. Such a novel combination of two dissimilar self-assembly techniques demonstrated a potential as a versatile tool for nanopatterning formation on a Si substrate, capable of being integrated into Si process technology. As exemplary applications, vertically aligned Ni nanowires have been synthesized into an S4VP-guided AAO membrane on a Si substrate in addition to anti-dot structured [Co/Pd]n magnetic multilayer using S4VP self assembly. Third, a highly hexagonally ordered, vertically parallel aluminum oxide nanotube array was successfully fabricated via hard anodization technique

  15. Nanoporous anodic aluminum oxide with a long-range order and tunable cell sizes by phosphoric acid anodization on pre-patterned substrates

    Science.gov (United States)

    Surawathanawises, Krissada; Cheng, Xuanhong

    2014-01-01

    Nanoporous anodic aluminum oxide (AAO) has been explored for various applications due to its regular cell arrangement and relatively easy fabrication processes. However, conventional two-step anodization based on self-organization only allows the fabrication of a few discrete cell sizes and formation of small domains of hexagonally packed pores. Recent efforts to pre-pattern aluminum followed with anodization significantly improve the regularity and available pore geometries in AAO, while systematic study of the anodization condition, especially the impact of acid composition on pore formation guided by nanoindentation is still lacking. In this work, we pre-patterned aluminium thin films using ordered monolayers of silica beads and formed porous AAO in a single-step anodization in phosphoric acid. Controllable cell sizes ranging from 280 nm to 760 nm were obtained, matching the diameters of the silica nanobead molds used. This range of cell size is significantly greater than what has been reported for AAO formed in phosphoric acid in the literature. In addition, the relationships between the acid concentration, cell size, pore size, anodization voltage and film growth rate were studied quantitatively. The results are consistent with the theory of oxide formation through an electrochemical reaction. Not only does this study provide useful operational conditions of nanoindentation induced anodization in phosphoric acid, it also generates significant information for fundamental understanding of AAO formation. PMID:24535886

  16. Fabrication of polymeric nano-batteries array using anodic aluminum oxide templates.

    Science.gov (United States)

    Zhao, Qiang; Cui, Xiaoli; Chen, Ling; Liu, Ling; Sun, Zhenkun; Jiang, Zhiyu

    2009-02-01

    Rechargeable nano-batteries were fabricated in the array pores of anodic aluminum oxide (AAO) template, combining template method and electrochemical method. The battery consisted of electropolymerized PPy electrode, porous TiO2 separator, and chemically polymerized PAn electrode was fabricated in the array pores of two-step anodizing aluminum oxide (AAO) membrane, based on three-step assembling method. It performs typical electrochemical battery behavior with good charge-discharge ability, and presents a capacity of 25 nAs. AFM results show the hexagonal array of nano-batteries' top side. The nano-battery may be a promising device for the development of Micro-Electro-Mechanical Systems (MEMS), and Nano-Electro-Mechanical Systems (NEMS).

  17. Prediction model for oxide thickness on aluminum alloy cladding during irradiation

    International Nuclear Information System (INIS)

    Kim, Yeon Soo; Hofman, G.L.; Hanan, N.A.; Snelgrove, J.L.

    2003-01-01

    An empirical model predicting the oxide film thickness on aluminum alloy cladding during irradiation has been developed as a function of irradiation time, temperature, heat flux, pH, and coolant flow rate. The existing models in the literature are neither consistent among themselves nor fit the measured data very well. They also lack versatility for various reactor situations such as a pH other than 5, high coolant flow rates, and fuel life longer than ∼1200 hrs. Particularly, they were not intended for use in irradiation situations. The newly developed model is applicable to these in-reactor situations as well as ex-reactor tests, and has a more accurate prediction capability. The new model demonstrated with consistent predictions to the measured data of UMUS and SIMONE fuel tests performed in the HFR, Petten, tests results from the ORR, and IRIS tests from the OSIRIS and to the data from the out-of-pile tests available in the literature as well. (author)

  18. Radioluminescence of rare-earth doped aluminum oxide

    Energy Technology Data Exchange (ETDEWEB)

    Santiago, M.; Molina, P. [Universidad Nacional del Centro de la Provincia de Buenos Aires, Instituto de Fisica Arroyo Seco, Pinto 399, 7000 Tandil (Argentina); Barros, V. S.; Khoury, H. J.; Elihimas, D. R., E-mail: msantiag@exa.unicen.edu.ar [Universidade Federal de Pernambuco, Departamento de Energia Nuclear, Av. Prof. Luiz Freire 1000, Recife, PE 50740-540 (Brazil)

    2011-10-15

    Carbon-doped aluminum oxide (Al{sub 2}O{sub 3}:C) is one of the most used radioluminescence (Rl) materials for fiberoptic dosimetry due to its high efficiency and commercial availability. However, this compound presents the drawback of emitting in the spectral region, where the spurious radioluminescence of fibers is also important. In this work, the radioluminescence response of rare-earth doped Al{sub 2}O{sub 3} samples has been evaluated. The samples were prepared by mixing stoichiometric amounts of aluminum nitrate, urea and dopants with different amounts of terbium, samarium, cerium and thulium nitrates varying from 0 to 0.15 mo 1%. The influence of the different activators on the Rl spectra has been investigated in order to determine the feasibility of using these compounds for Rl fiberoptic dosimetry. (Author)

  19. Radioluminescence of rare-earth doped aluminum oxide

    International Nuclear Information System (INIS)

    Santiago, M.; Molina, P.; Barros, V. S.; Khoury, H. J.; Elihimas, D. R.

    2011-10-01

    Carbon-doped aluminum oxide (Al 2 O 3 :C) is one of the most used radioluminescence (Rl) materials for fiberoptic dosimetry due to its high efficiency and commercial availability. However, this compound presents the drawback of emitting in the spectral region, where the spurious radioluminescence of fibers is also important. In this work, the radioluminescence response of rare-earth doped Al 2 O 3 samples has been evaluated. The samples were prepared by mixing stoichiometric amounts of aluminum nitrate, urea and dopants with different amounts of terbium, samarium, cerium and thulium nitrates varying from 0 to 0.15 mo 1%. The influence of the different activators on the Rl spectra has been investigated in order to determine the feasibility of using these compounds for Rl fiberoptic dosimetry. (Author)

  20. Deposition and characterization of NbAIN thin films by reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Carvalho, R.G.; Felix, L.C.; Fernandez, D.A.R.; Fontes Junior, A.S.; Oliveira, G.B.; Tentardini, E.K.

    2016-01-01

    The objective of this work was to study NbAlN thin films and the influence of variation in the concentration of aluminum in the crystal structure and oxidation resistance of these coatings. The thin films were deposited by reactive magnetron sputtering and characterized by Grazing Incidence X-ray Diffraction (GIXRD), Energy Dispersive Spectroscopy (EDS) and oxidation tests at high temperatures. NbAlN thin films were deposited and present at concentration of 10, 20 and 42 at% Al. The NbAlN crystalline phase obtained was the δ-NbN, however it was observed a shift of the peaks in the patterns obtained GIXRD of regions for larger angles for these samples, indicating the formation of a solid solution. The higher oxidation resistance temperature was 700° C for the sample with 42 in at% Al. From the SEM analysis it was possible to observe the surface of the film after oxidation, all films showed defects, however the amount of such defects was lower in samples with higher aluminum concentrations. (author)

  1. Aluminum Agglomeration and Trajectory in Solid Rocket Motors

    Science.gov (United States)

    2007-08-30

    34the stepwise oxidation of aluminum (that) is caused by the sequence of polymorphic phase transitions occurring in the growing oxide film",2 5 . 25...C. and Yang, V., "Analysis of RDX Monopropellant Combustion with Two-Phase Subsurface Reactions", Journal of Propulsion and Power, Vol. 11, No. 4...temperature. Generalized mechanisms have been developed and applied to many ingredients such as HMX , GAP, NG, BTTN, ADN and AP.10 The burning rates of

  2. Standard test methods for chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade aluminum oxide and aluminum oxide-boron carbide composite pellets

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    1994-01-01

    1.1 These test methods cover procedures for the chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade aluminum oxide and aluminum oxide-boron carbide composite pellets to determine compliance with specifications. 1.2 The analytical procedures appear in the following order: Sections Boron by Titrimetry 7 to 13 Separation of Boron for Mass Spectrometry 14 to 19 Isotopic Composition by Mass Spectrometry 20 to 23 Separation of Halides by Pyrohydrolysis 24 to 27 Fluoride by Ion-Selective Electrode 28 to 30 Chloride, Bromide, and Iodide by Amperometric Microtitrimetry 31 to 33 Trace Elements by Emission Spectroscopy 34 to 46 1.3 The values stated in SI units are to be regarded as the standard. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. (F...

  3. Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

    International Nuclear Information System (INIS)

    Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

    2013-01-01

    Tungsten oxide (WO x ) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10 −4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO x -based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 10 6 , a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm 2 /V s was realized. Our results demonstrated that WO x -based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

  4. Semi-rechargeable Aluminum-Air Battery with a TiO2 Internal Layer with Plain Salt Water as an Electrolyte

    Science.gov (United States)

    Mori, Ryohei

    2016-07-01

    To develop a semi-rechargeable aluminum-air battery, we attempted to insert various kinds of ceramic oxides between an aqueous NaCl electrolyte and an aluminum anode. From cyclic voltammetry experiments, we found that some of the ceramic oxide materials underwent an oxidation-reduction reaction, which indicates the occurrence of a faradaic electrochemical reaction. Using a TiO2 film as an internal layer, we successfully prepared an aluminum-air battery with secondary battery behavior. However, cell impedance increased as the charge/discharge reactions proceeded probably because of accumulation of byproducts in the cell components and the air cathode. Results of quantum calculations and x-ray photoelectron spectroscopy suggest the possibility of developing an aluminum rechargeable battery using TiO2 as an internal layer.

  5. Piezoresistive polysilicon film obtained by low-temperature aluminum-induced crystallization

    International Nuclear Information System (INIS)

    Patil, Suraj Kumar; Celik-Butler, Zeynep; Butler, Donald P.

    2010-01-01

    A low-temperature deposition process employing aluminum-induced crystallization has been developed for fabrication of piezoresistive polycrystalline silicon (polysilicon) films on low cost and flexible polyimide substrates for force and pressure sensing applications. To test the piezoresistive properties of the polysilicon films, prototype pressure sensors were fabricated on surface-micromachined silicon nitride (Si 3 N 4 ) diaphragms, in a half-Wheatstone bridge configuration. Characterization of the pressure sensor was performed using atomic force microscope in contact mode with a specially modified probe-tip. Low pressure values ranging from 5 kPa to 45 kPa were achieved by this method. The resistance change was found to be - 0.1% to 0.5% and 0.07% to 0.3% for polysilicon films obtained at 500 o C and 400 o C, respectively, for the applied pressure range.

  6. Role of melt behavior in modifying oxidation distribution using an interface incorporated model in selective laser melting of aluminum-based material

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Dongdong, E-mail: dongdonggu@nuaa.edu.cn; Dai, Donghua [College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Yudao Street 29, Nanjing 210016 (China); Institute of Additive Manufacturing (3D Printing), Nanjing University of Aeronautics and Astronautics, Yudao Street 29, Nanjing 210016 (China)

    2016-08-28

    A transient three dimensional model for describing the molten pool dynamics and the response of oxidation film evolution in the selective laser melting of aluminum-based material is proposed. The physical difference in both sides of the scan track, powder-solid transformation and temperature dependent physical properties are taken into account. It shows that the heat energy tends to accumulate in the powder material rather than in the as-fabricated part, leading to the formation of the asymmetrical patterns of the temperature contour and the attendant larger dimensions of the molten pool in the powder phase. As a higher volumetric energy density is applied (≥1300 J/mm{sup 3}), a severe evaporation is produced with the upward direction of velocity vector in the irradiated powder region while a restricted operating temperature is obtained in the as-fabricated part. The velocity vector continuously changes from upward direction to the downward one as the scan speed increases from 100 mm/s to 300 mm/s, promoting the generation of the debris of the oxidation films and the resultant homogeneous distribution state in the matrix. For the applied hatch spacing of 50 μm, a restricted remelting phenomenon of the as-fabricated part is produced with the upward direction of the convection flow, significantly reducing the turbulence of the thermal-capillary convection on the breaking of the oxidation films, and therefore, the connected oxidation films through the neighboring layers are typically formed. The morphology and distribution of the oxidation are experimentally acquired, which are in a good agreement with the results predicted by simulation.

  7. Combined optical gain and degradation measurements in DCM2 doped Tris-(8-hydroxyquinoline)aluminum thin-films

    Science.gov (United States)

    Čehovski, Marko; Döring, Sebastian; Rabe, Torsten; Caspary, Reinhard; Kowalsky, Wolfgang

    2016-04-01

    Organic laser sources offer the opportunity to integrate flexible and widely tunable lasers in polymer waveguide circuits, e.g. for Lab-on-Foil applications. Therefore, it is necessary to understand gain and degradation processes for long-term operation. In this paper we address the challenge of life-time (degradation) measurements of photoluminescence (PL) and optical gain in thin-film lasers. The well known guest-host system of aluminum-chelate Alq3 (Tris-(8-hydroxyquinoline)aluminum) as host material and the laser dye DCM2 (4-(Dicyanomethylene)-2- methyl-6-julolidyl-9-enyl-4H-pyran) as guest material is employed as laser active material. Sample layers have been built up by co-evaporation in an ultrahigh (UHV) vacuum chamber. 200nm thick films of Alq3:DCM2 with different doping concentrations have been processed onto glass and thermally oxidized silicon substrates. The gain measurements have been performed by the variable stripe length (VSL) method. This measurement technique allows to determine the thin-film waveguide gain and loss, respectively. For the measurements the samples were excited with UV irradiation (ƛ = 355nm) under nitrogen atmosphere by a passively Q-switched laser source. PL degradation measurements with regard to the optical gain have been done at laser threshold (approximately 3 μJ/cm2), five times above laser threshold and 10 times above laser threshold. A t50-PL lifetime of > 107 pulses could be measured at a maximum excitation energy density of 32 μJ/cm2. This allows for a detailed analysis of the gain degradation mechanism and therefore of the stimulated cross section. Depending on the DCM2 doping concentration C the stimulated cross section was reduced by 35 %. Nevertheless, the results emphasizes the necessity of the investigation of degradation processes in organic laser sources for long-term applications.

  8. Coprecipitation of arsenate with metal oxides. 3. Nature, mineralogy, and reactivity of iron(III)-aluminum precipitates.

    Science.gov (United States)

    Violante, Antonio; Pigna, Massimo; Del Gaudio, Stefania; Cozzolino, Vincenza; Banerjee, Dipanjan

    2009-03-01

    Coprecipitation involving arsenic with aluminum or iron has been studied because this technique is considered particularly efficient for removal of this toxic element from polluted waters. Coprecipitation of arsenic with mixed iron-aluminum solutions has received scant attention. In this work we studied (i)the mineralogy, surface properties, and chemical composition of mixed iron-aluminum oxides formed at initial Fe/Al molar ratio of 1.0 in the absence or presence of arsenate [As/ Fe+Al molar ratio (R) of 0, 0.01, or 0.1] and at pH 4.0, 7.0, and 10.0 and aged for 30 and 210 days at 50 degrees C and (ii) the removal of arsenate from the coprecipitates after addition of phosphate. The amounts of short-range ordered precipitates (ferrihydrite, aluminous ferrihydrite and/or poorly crystalline boehmite) were greater than those found in iron and aluminum systems (studied in previous works), due to the capacity of both aluminum and arsenate to retard or inhibitthe transformation of the initially formed precipitates into well-crystallized oxides (gibbsite, bayerite, and hematite). As a consequence, the surface areas of the iron-aluminum oxides formed in the absence or presence of arsenate were usually much larger than those of aluminum or iron oxides formed under the same conditions. Arsenate was found to be associated mainly into short-range ordered materials. Chemical composition of all samples was affected by pH, initial R, and aging. Phosphate sorption was facilitated by the presence of short-range ordered materials, mainly those richer in aluminum, but was inhibited by arsenate present in the samples. The quantities of arsenate replaced by phosphate, expressed as percentages of its total amount present in the samples, were particularly low, ranging from 10% to 26%. A comparison of the desorption of arsenate by phosphate from aluminum-arsenate and iron-arsenate (studied in previous works) and iron-aluminum-arsenate coprecipitates evidenced that phosphate has a greater

  9. Electrodeposition of polypyrrole films on aluminum surfaces from a p-toluene sulfonic acid medium

    Directory of Open Access Journals (Sweden)

    Andréa Santos Liu

    2009-01-01

    Full Text Available Electrodeposition of polypyrrole films on aluminum from aqueous solutions containing p-toluene sulfonic acid and pyrrole was performed by cyclic voltammetry and galvanostatic technique. The influence of applied current density on the morphology of the films was studied by Scanning Electron Microscopy. The films displayed a cauliflower-like structure consisting of micro-spherical grains. This structure is related to dopand intercalation in the polymeric chain. Films deposited at higher current density were more susceptible to the formation of pores and defects along the polymeric chain than films deposited at lower current density. These pores allow the penetration of aggressive species, thereby favoring the corrosion process.

  10. Aluminum Oxide Nanoparticles for Highly Efficient Asphaltene Separation from Crude Oil Using Ceramic Membrane Technology

    Directory of Open Access Journals (Sweden)

    Rezakazemi Mashallah

    2017-11-01

    Full Text Available The effects of aluminum oxide nanoparticles on the removal of asphaltenes from an Iranian crude oil (Soroush using a ceramic membrane with pore size of 0.2 µm were investigated. In order to achieve superior asphaltene separation by ultrafiltration, it is essential to make some changes for destabilizing asphaltene in crude oil. The asphaltene destabilization was done using crude oil contact with an acid containing dissolved metal ions. Metal oxide nanoparticles adsorbed asphaltene molecules and increased their molecular size. The nanoparticle of aluminum oxide was applied to alter precipitation and peptization properties of asphaltenes. Dynamic Light Scattering (DLS was used to measurement of the asphaltene molecular size dissolved in toluene. Raman spectroscopy and the Tuinstra equation were used to determine the aromatic sheet diameter (La via the integrated intensities of the G and D1 modes. This revealed that the asphaltene particles react with nano aluminum oxide and the average molecular size of asphaltene was raised from 512.754 to 2949.557 nm and La from 5.482 to 13.787. The obtained results showed that using nano aluminum oxides, asphaltene separation increased from 60–85 wt% to 90–97 wt% based on the asphaltene content of crude oil.

  11. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U. [Institute of Sensor and Actuator Systems, Vienna University of Technology, Vienna 1040 (Austria); Nicolay, P. [CTR Carinthian Tech Research AG, Villach 9524 (Austria)

    2015-02-14

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

  12. Silicon and aluminum doping effects on the microstructure and properties of polymeric amorphous carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xiaoqiang, E-mail: lxq_suse@sina.com [Material Corrosion and Protection Key Laboratory of Sichuan province, Sichuan University of Science and Engineering, Zigong 643000 (China); Hao, Junying, E-mail: jyhao@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Xie, Yuntao [Material Corrosion and Protection Key Laboratory of Sichuan province, Sichuan University of Science and Engineering, Zigong 643000 (China)

    2016-08-30

    Highlights: • Evolution of nanostructure and properties of the polymeric amorphous carbon films were firstly studied. • Si doping enhanced polymerization of the hydrocarbon chains and Al doping resulted in increase in the ordered carbon clusters of polymeric amorphous carbon films. • Soft polymeric amorphous carbon films exhibited an unconventional frictional behaviors with a superior wear resistance. • The mechanical and vacuum tribological properties of the polymeric amorphous carbon films were significantly improved by Si and Al co-doping. - Abstract: Polymeric amorphous carbon films were prepared by radio frequency (R.F. 13.56 MHz) magnetron sputtering deposition. The microstructure evolution of the deposited polymeric films induced by silicon (Si) and aluminum(Al) doping were scrutinized through infrared spectroscopy, multi-wavelength Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The comparative results show that Si doping can enhance polymerization and Al doping results in an increase in the ordered carbon clusters. Si and Al co-doping into polymeric films leads to the formation of an unusual dual nanostructure consisting of cross-linked polymer-like hydrocarbon chains and fullerene-like carbon clusters. The super-high elasticity and super-low friction coefficients (<0.002) under a high vacuum were obtained through Si and Al co-doping into the films. Unconventionally, the co-doped polymeric films exhibited a superior wear resistance even though they were very soft. The relationship between the microstructure and properties of the polymeric amorphous carbon films with different elements doping are also discussed in detail.

  13. UV photodissociation spectroscopy of oxidized undecylenic acid films.

    Science.gov (United States)

    Gomez, Anthony L; Park, Jiho; Walser, Maggie L; Lin, Ao; Nizkorodov, Sergey A

    2006-03-16

    Oxidation of thin multilayered films of undecylenic (10-undecenoic) acid by gaseous ozone was investigated using a combination of spectroscopic and mass spectrometric techniques. The UV absorption spectrum of the oxidized undecylenic acid film is significantly red-shifted compared to that of the initial film. Photolysis of the oxidized film in the tropospheric actinic region (lambda > 295 nm) readily produces formaldehyde and formic acid as gas-phase products. Photodissociation action spectra of the oxidized film suggest that organic peroxides are responsible for the observed photochemical activity. The presence of peroxides is confirmed by mass-spectrometric analysis of the oxidized sample and an iodometric test. Significant polymerization resulting from secondary reactions of Criegee radicals during ozonolysis of the film is observed. The data strongly imply the importance of photochemistry in aging of atmospheric organic aerosol particles.

  14. Growth of porous anodized alumina on the sputtered aluminum films with 2D-3D morphology for high specific surface area

    Science.gov (United States)

    Liao, M. W.; Chung, C. K.

    2014-08-01

    The porous anodic aluminum oxide (AAO) with high-aspect-ratio pore channels is widely used as a template for fabricating nanowires or other one-dimensional (1D) nanostructures. The high specific surface area of AAO can also be applied to the super capacitor and the supporting substrate for catalysis. The rough surface could be helpful to enhance specific surface area but it generally results in electrical field concentration even to ruin AAO. In this article, the aluminum (Al) films with the varied 2D-3D morphology on Si substrates were prepared using magnetron sputtering at a power of 50 W-185 W for 1 h at a working pressure of 2.5 × 10-1 Pa. Then, AAO was fabricated from the different Al films by means of one-step hybrid pulse anodizing (HPA) between the positive 40 V and the negative -2 V (1 s:1 s) for 3 min in 0.3 M oxalic acid at a room temperature. The microstructure and morphology of Al films were characterized by X-ray diffraction, scanning electron microscope and atomic force microscope, respectively. Some hillocks formed at the high target power could be attributed to the grain texture growth in the normal orientation of Al(1 1 1). The 3D porous AAO structure which is different from the conventional 2D planar one has been successfully demonstrated using HPA on the film with greatly rough hillock-surface formed at the highest power of 185 W. It offers a potential application of the new 3D AAO to high specific surface area devices.

  15. A specific 2,4-disubstituted-adamantane interaction with plasma-grown aluminum oxide. Inelastic-electron-tunneling spectroscopy study

    NARCIS (Netherlands)

    Meijer, E.W.; Raas, M.C.; Velzen, van P.N.T.

    1987-01-01

    The interaction of several mono- and disubstituted adamantanes with plasma-grown aluminum oxide has been studied using inelastic-electron-tunneling (IET) spectroscopy. The IET spectra evidence the chemisorption of 2,4-adamantanedione onto the aluminum oxide surface as the carboxylate anion of

  16. Laser patterning of superconducting oxide films

    International Nuclear Information System (INIS)

    Gupta, A.; Hussey, B.W.; Koren, G.; Cooper, E.I.; Jagannathan, R.

    1988-01-01

    The focused output of an argon ion laser (514.5 nm) has been used for wiring superconducting lines of Y/sub 1/Ba/sub 2/CU/sub 3/O/sub 7-δ/ using films prepared from nitrate and trifluoroacetate solution precursors. A stoichiometric solution of the precursors is sprayed or spun on to the substrate to form a film. The film is patterned by irradiating in selected areas to convert the irradiated layers to an intermediate oxide or fluoride state, the nonirradiated areas being unchanged. The nonirradiated areas are then dissolved away, leaving a pattern of the oxide or fluoride material. This patterned layer is converted to the superconducting 1-2-3 oxide in a subsequent annealing step. Maskless patterning of superconducting films has also been demonstrated by laser-assisted etching of the films in aqueous KOH solution. Although superconductivity is destroyed when the films are placed in solution, it can be restored after a brief anneal in oxygen

  17. Anodic films grown on magnesium and magnesium alloys in fluoride solutions

    Energy Technology Data Exchange (ETDEWEB)

    Ono, S. [Dept. of Applied Chemistry, Kogakuin Univ., Tokyo (Japan); Masuko, N. [Dept. of Metallurgical Engineering, Chiba Inst. of Tech., Narashino, Chiba (Japan)

    2003-07-01

    Formation behavior of anodic oxide films on magnesium in fluoride electrolytes was investigated with attention to the effects of anodizing voltage and aluminum content. In the range of voltage between 2 V and 100 V, porous film was formed in alkaline fluoride solution associated with high current density at around 5 V and at breakdown voltage. The critical voltage of breakdown to allow maximum current flow was approximately 60 V and relatively independent on substrate purity. The films formed at breakdown voltage showed a lava-like porous structure similar to those obtained on aluminum and other valve metals. Barrier films or semi-barrier films, which were composed of hydrated outer layer and relatively dense inner layer, were formed at the other voltages. In the case of AZ91D, the critical voltage increased to 70 V and peculiar phenomenon at 5 V was not observed, so that only barrier films were formed at less than the breakdown voltage. These phenomena can be explained by the effects of aluminum incorporation into the film to prevent dissolution and to promote passivation of magnesium. The depth profiles of constituent elements showed that aluminum distributed in whole depth of the film. (orig.)

  18. Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

    Science.gov (United States)

    Krawczak, Ewelina; Agata, Zdyb; Gulkowski, Slawomir; Fave, Alain; Fourmond, Erwann

    2017-11-01

    Transparent Conductive Oxides (TCOs) characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO) is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology) as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

  19. Growth of aluminum-free porous oxide layers on titanium and its alloys Ti-6Al-4V and Ti-6Al-7Nb by micro-arc oxidation.

    Science.gov (United States)

    Duarte, Laís T; Bolfarini, Claudemiro; Biaggio, Sonia R; Rocha-Filho, Romeu C; Nascente, Pedro A P

    2014-08-01

    The growth of oxides on the surfaces of pure Ti and two of its ternary alloys, Ti-6Al-4V and Ti-6Al-7Nb, by micro-arc oxidation (MAO) in a pH 5 phosphate buffer was investigated. The primary aim was to form thick, porous, and aluminum-free oxide layers, because these characteristics favor bonding between bone and metal when the latter is implanted in the human body. On Ti, Ti-6Al-4 V, and Ti-6Al-7Nb, the oxides exhibited breakdown potentials of about 200 V, 130 V, and 140 V, respectively, indicating that the oxide formed on the pure metal is the most stable. The use of the MAO procedure led to the formation of highly porous oxides, with a uniform distribution of pores; the pores varied in size, depending on the anodizing applied voltage and time. Irrespective of the material being anodized, Raman analyses allowed us to determine that the oxide films consisted mainly of the anatase phase of TiO2, and XPS results indicated that this oxide is free of Al and any other alloying element. Copyright © 2014 Elsevier B.V. All rights reserved.

  20. Ballistic current transport studies of ferromagnetic multilayer films and tunnel junctions (invited)

    International Nuclear Information System (INIS)

    Rippard, W. H.; Perrella, A. C.; Buhrman, R. A.

    2001-01-01

    Three applications of ballistic electron microscopy are used to study, with nanometer-scale resolution, the magnetic and electronic properties of magnetic multilayer thin films and tunnel junctions. First, the capabilities of ballistic electron magnetic microscopy are demonstrated through an investigation of the switching behavior of continuous Ni 80 Fe 20 /Cu/Co trilayer films in the presence of an applied magnetic field. Next, the ballistic, hot-electron transport properties of Co films and multilayers formed by thermal evaporation and magnetron sputtering are compared, a comparison which reveals significant differences in the ballistic transmissivity of thin film multilayers formed by the two techniques. Finally, the electronic properties of thin aluminum oxide tunnel junctions formed by thermal evaporation and sputter deposition are investigated. Here the ballistic electron microscopy studies yield a direct measurement of the barrier height of the aluminum oxide barriers, a result that is invariant over a wide range of oxidation conditions. [copyright] 2001 American Institute of Physics

  1. Electrical and optical properties of zinc oxide: thin films

    International Nuclear Information System (INIS)

    Zuhairusnizam Md Darus; Abdul Jalil Yeop Majlis; Anis Faridah Md Nor; Burhanuddin Kamaluddin

    1992-01-01

    Zinc oxide films have been prepared by high temperature oxidation of thermally evaporated zinc films on glass substrates. The resulting films are characterized using X-ray diffraction, optical absorption and electrical conductivity measurements. These zinc oxide films are very transparent and photoconductive

  2. Low temperature solid oxide fuel cells with proton-conducting Y:BaZrO{sub 3} electrolyte on porous anodic aluminum oxide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Ha, Seungbum [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); School of Mechanical and Aerospace Engineering, Seoul National University, Daehak-dong, Gwanak-gu, Seoul 151–742 (Korea, Republic of); Su, Pei-Chen [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Daehak-dong, Gwanak-gu, Seoul 151–742 (Korea, Republic of); Cha, Suk Won, E-mail: swcha@snu.ac.kr [School of Mechanical and Aerospace Engineering, Seoul National University, Daehak-dong, Gwanak-gu, Seoul 151–742 (Korea, Republic of)

    2013-10-01

    This paper presents the architecture of a nano thin-film yttrium-doped barium zirconate (BYZ) solid-oxide fuel cell that uses nanoporous anodic aluminum oxide (AAO) as a supporting and gas-permeable substrate. The anode was fabricated by sputtering 300 nm platinum thin film that partially covered the AAO surface pores, followed by an additional conformal platinum coating to tune the pore size by atomic layer deposition. Two different nano-porous anode structures with a pore size of 10 nm or 50 nm were deposited. Proton-conducting BYZ ceramic electrolyte with increasing thicknesses of 300, 600, and 900 nm was deposited on top of the platinum anode by pulsed laser deposition, followed by a 200 nm layer of porous Pt sputtered on BYZ electrolyte as a cathode. The open circuit voltage (OCV) of the fuel cells was characterized at 250 °C with 1:1 volumetric stoichiometry of a methanol/water vapor mixture as the fuel. The OCVs were 0.17 V with a 900 nm-thick BYZ electrolyte on 50 nm pores and 0.3 V with a 600 nm-thick BYZ electrolyte on 10 nm pores, respectively, but it increased to 0.8 V for a 900 nm-thick BYZ electrolyte on 10 nm pores, indicating that increasing the film thickness and decreasing a surface pore size help to reduce the number of electrolyte pinholes and the gas leakage through the electrolyte. A maximum power density of 5.6 mW/cm{sup 2} at 250 °C was obtained from the fuel cell with 900 nm of BYZ electrolyte using methanol vapor as a fuel. - Highlights: • A low temperature ceramic fuel cell on nano-porous substrate was demonstrated. • A thin-film yttrium doped barium zirconate (BYZ) was deposited as an electrolyte. • An open circuit voltage (OCV) was measured to verify the BYZ film quality. • An OCV increased by increasing BYZ film thickness and decreasing pore size of anode. • The current–voltage performance was measured using vaporized methanol fuel at 250 °C.

  3. Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

    International Nuclear Information System (INIS)

    Vähä-Nissi, Mika; Pitkänen, Marja; Salo, Erkki; Kenttä, Eija; Tanskanen, Anne; Sajavaara, Timo; Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana; Karppinen, Maarit; Harlin, Ali

    2014-01-01

    Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al 2 O 3 of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al 2 O 3 thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al 2 O 3 • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli

  4. Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Pitkänen, Marja; Salo, Erkki; Kenttä, Eija [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Tanskanen, Anne, E-mail: Anne.Tanskanen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Sajavaara, Timo, E-mail: timo.sajavaara@jyu.fi [University of Jyväskylä, Department of Physics, P.O. Box 35, FI-40014 Jyväskylä (Finland); Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Karppinen, Maarit, E-mail: Maarit.Karppinen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Harlin, Ali [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland)

    2014-07-01

    Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al{sub 2}O{sub 3} of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al{sub 2}O{sub 3} thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al{sub 2}O{sub 3} • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli.

  5. Oxidation of ruthenium thin films using atomic oxygen

    Energy Technology Data Exchange (ETDEWEB)

    McCoy, A.P.; Bogan, J.; Brady, A.; Hughes, G.

    2015-12-31

    In this study, the use of atomic oxygen to oxidise ruthenium thin films is assessed. Atomic layer deposited (ALD) ruthenium thin films (~ 3 nm) were exposed to varying amounts of atomic oxygen and the results were compared to the impact of exposures to molecular oxygen. X-ray photoelectron spectroscopy studies reveal substantial oxidation of metallic ruthenium films to RuO{sub 2} at exposures as low as ~ 10{sup 2} L at 575 K when atomic oxygen was used. Higher exposures of molecular oxygen resulted in no metal oxidation highlighting the benefits of using atomic oxygen to form RuO{sub 2}. Additionally, the partial oxidation of these ruthenium films occurred at temperatures as low as 293 K (room temperature) in an atomic oxygen environment. - Highlights: • X-ray photoelectron spectroscopy study of the oxidation of Ru thin filmsOxidation of Ru thin films using atomic oxygen • Comparison between atomic oxygen and molecular oxygen treatments on Ru thin films • Fully oxidised RuO{sub 2} thin films formed with low exposures to atomic oxygen.

  6. Nanocrystalline CdTe thin films by electrochemical synthesis

    Directory of Open Access Journals (Sweden)

    Ramesh S. Kapadnis

    2013-03-01

    Full Text Available Cadmium telluride thin films were deposited onto different substrates as copper, Fluorine-doped tin oxide (FTO, Indium tin oxide (ITO, Aluminum and zinc at room temperature via electrochemical route. The morphology of the film shows the nanostructures on the deposited surface of the films and their growth in vertical direction. Different nanostructures developed on different substrates. The X-ray diffraction study reveals that the deposited films are nanocrystalline in nature. UV-Visible absorption spectrum shows the wide range of absorption in the visible region. Energy-dispersive spectroscopy confirms the formation of cadmium telluride.

  7. Effects of aluminum and extremely low frequency electromagnetic radiation on oxidative stress and memory in brain of mice.

    Science.gov (United States)

    Deng, Yuanxin; Zhang, Yanwen; Jia, Shujie; Liu, Junkang; Liu, Yanxia; Xu, Weiwei; Liu, Lei

    2013-12-01

    This study was aimed to investigate the effect of aluminum and extremely low-frequency magnetic fields (ELF-MF) on oxidative stress and memory of SPF Kunming mice. Sixty male SPF Kunming mice were divided randomly into four groups: control group, ELF-MF group (2 mT, 4 h/day), load aluminum group (200 mg aluminum/kg, 0.1 ml/10 g), and ELF-MF + aluminum group (2 mT, 4 h/day, 200 mg aluminum/kg). After 8 weeks of treatment, the mice of three experiment groups (ELF-MF group, load aluminum group, and ELF-MF + aluminum group) exhibited firstly the learning memory impairment, appearing that the escaping latency to the platform was prolonged and percentage in the platform quadrant was reduced in the Morris water maze (MWM) task. Secondly are the pathologic abnormalities including neuronal cell loss and overexpression of phosphorylated tau protein in the hippocampus and cerebral cortex. On the other hand, the markers of oxidative stress were determined in mice brain and serum. The results showed a statistically significant decrease in superoxide dismutase activity and increase in the levels of malondialdehyde in the ELF-MF group (P < 0.05 or P < 0.01), load aluminum group (P < 0.01), and ELF-MF + aluminum group (P < 0.01). However, the treatment with ELF-MF + aluminum induced no more damage than ELF-MF and aluminum did, respectively. In conclusion, both aluminum and ELF-MF could impact on learning memory and pro-oxidative function in Kunming mice. However, there was no evidence of any association between ELF-MF exposure with aluminum loading.

  8. Characterization of chitosan-magnesium aluminum silicate nanocomposite films for buccal delivery of nicotine

    DEFF Research Database (Denmark)

    Pongjanyakul, Thaned; Khunawattanakul, Wanwisa; Strachan, Clare J

    2013-01-01

    The objective of this study was to prepare and characterize chitosan-magnesium aluminum silicate (CS-MAS) nanocomposite films as a buccal delivery system for nicotine (NCT). The effects of the CS-MAS ratio on the physicochemical properties, release and permeation, as well as on the mucoadhesive...

  9. Low temperature aluminum nitride thin films for sensory applications

    Energy Technology Data Exchange (ETDEWEB)

    Yarar, E.; Zamponi, C.; Piorra, A.; Quandt, E., E-mail: eq@tf.uni-kiel.de [Institute for Materials Science, Chair for Inorganic Functional Materials, Kiel University, D-24143 Kiel (Germany); Hrkac, V.; Kienle, L. [Institute for Materials Science, Chair for Synthesis and Real Structure, Kiel University, D-24143 Kiel (Germany)

    2016-07-15

    A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d{sub 33,f}) increased from 2.30 ± 0.32 pm/V up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (ε{sub r}) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e{sub 31,f}|) of 1.39 ± 0.01 C/m{sup 2} was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.

  10. Evaluation of the corrosion of aluminum tubes under conditions of natural imersion in aqueous medium

    International Nuclear Information System (INIS)

    Oliveira, M.F. de

    1985-01-01

    This work evaluates the corrosion of aluminum tubes under conditions of natural immersion in aqueous medium. Local attack was observed on the surface of the tubes for all temperatures studied. It was found that the mass flucturation of the samples tested in deionized water at room temperatures is practically inexistent. However, at temperatures of 45 and 60 0 C the aluminum react rapidly with water forming a film of hydrated oxide of aluminum known as bayerite. It was verified that the contact of graphite and particles containing high content of Cu with aluminum forms a galvanic couple which should be avoided. (Author) [pt

  11. Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer

    International Nuclear Information System (INIS)

    Chen, Dazheng; Zhang, Chunfu; Wang, Zhizhe; Zhang, Jincheng; Tang, Shi; Wei, Wei; Sun, Li; Hao, Yue

    2014-01-01

    Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C 61 butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150 °C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100 °C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightly improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.

  12. Chitosan/graphene oxide biocomposite film from pencil rod

    Science.gov (United States)

    Gea, S.; Sari, J. N.; Bulan, R.; Piliang, A.; Amaturrahim, S. A.; Hutapea, Y. A.

    2018-03-01

    Graphene Oxide (GO) has been succesfully synthesized using Hummber method from graphite powder of pencil rod. The excellent solubility of graphene oxide (GO)in water imparts its feasibilty as new filler for reinforcement hydrophilic biopolymers. In this research, the biocomposite film was fabricated from chitosan/graphene oxide. The characteristics of graphene oxide were investigated using Fourier Transform Infrared (FT-IR) and X-ray Diffraction (XRD). The results of the XRD showed graphene structur in 2θ, appeared at 9.0715°with interlayer spacing was about 9.74063Å. Preparation films with several variations of chitosan/graphene oxide was done by casting method and characterized by mechanical and morphological analysis. The mechanical properties of the tensile test in the film show that the film CS/GO (85: 15)% has the optimum Young’s modulus size of 2.9 GPa compared to other variations of CS / GO film. Morphological analysis film CS/GO (85:15)% by Scanning Electron Microscopy (SEM), the obtained biocomposites film showed fine dispersion of GO in the CS matrix and could mix each other homogeneously.

  13. Explosion properties of aluminum/oxidizer mixtures in a closed vessel; Aluminium/sankazai kongobutsu no mippei yokinai deno bakuhatsu tokusei

    Energy Technology Data Exchange (ETDEWEB)

    Miyake, A.; Aochi, T.; Shiraki, K.; Ogawa, T. [Yokohama National University, Yokohama (Japan). Faculty of Engineering

    1995-10-31

    In order to understand explosion properties of aluminum/oxidized mixtures for firework a closed vessel test was carried out, and pressure profile and ignition delay time were measured. It was found that flake aluminum (Al(f))/oxidized mixtures were more reactive and showed higher pressure values than those of atomized aluminum (Al(a))/oxidized mixtures. At a positive oxygen balance region Al(f)/oxidized mixtures showed a good agreement with the theoretically predicted values of combustion pressure at a constant volume. The combustion parameters with equilibrium calculation of aluminum/potassium chlorate showed almost the same ones of aluminum/potassium perchlorate. Furthermore, to investigate the influence of particle diameter of potassium chlorate on the explosion properties of Al(f)/potassium chlorate mixtures, the same kind of closed vessel test was performed and it was found that the mixtures became less sensitive and reactive with the increase of particle diameter. 17 refs., 7 figs., 2 tabs.

  14. Interface and oxide traps in high-κ hafnium oxide films

    International Nuclear Information System (INIS)

    Wong, H.; Zhan, N.; Ng, K.L.; Poon, M.C.; Kok, C.W.

    2004-01-01

    The origins of the interface trap generation and the effects of thermal annealing on the interface and bulk trap distributions are studied in detail. We found that oxidation of the HfO 2 /Si interface, removal of deep trap centers, and crystallization of the as-deposited film will take place during the post-deposition annealing (PDA). These processes will result in the removal of interface traps and deep oxide traps and introduce a large amount of shallow oxide traps at the grain boundaries of the polycrystalline film. Thus, trade-off has to be made in considering the interface trap density and oxide trap density when conducting PDA. In addition, the high interface trap and oxide trap densities of the HfO 2 films suggest that we may have to use the SiO 2 /HfO 2 stack or hafnium silicate structure for better device performance

  15. Ballistic phonon and thermal radiation transport across a minute vacuum gap in between aluminum and silicon thin films: Effect of laser repetitive pulses on transport characteristics

    Science.gov (United States)

    Yilbas, B. S.; Ali, H.

    2016-08-01

    Short-pulse laser heating of aluminum and silicon thin films pair with presence of a minute vacuum gap in between them is considered and energy transfer across the thin films pair is predicted. The frequency dependent Boltzmann equation is used to predict the phonon intensity distribution along the films pair for three cycles of the repetitive short-pulse laser irradiation on the aluminum film surface. Since the gap size considered is within the Casimir limit, thermal radiation and ballistic phonon contributions to energy transfer across the vacuum gap is incorporated. The laser irradiated field is formulated in line with the Lambert's Beer law and it is considered as the volumetric source in the governing equations of energy transport. In order to assess the phonon intensity distribution in the films pair, equivalent equilibrium temperature is introduced. It is demonstrated that thermal separation of electron and lattice sub-systems in the aluminum film, due to the short-pulse laser irradiation, takes place and electron temperature remains high in the aluminum film while equivalent equilibrium temperature for phonons decays sharply in the close region of the aluminum film interface. This behavior is attributed to the phonon boundary scattering at the interface and the ballistic phonon transfer to the silicon film across the vacuum gap. Energy transfer due to the ballistic phonon contribution is significantly higher than that of the thermal radiation across the vacuum gap.

  16. Ballistic phonon and thermal radiation transport across a minute vacuum gap in between aluminum and silicon thin films: Effect of laser repetitive pulses on transport characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Yilbas, B.S., E-mail: bsyilbas@kfupm.edu.sa; Ali, H.

    2016-08-15

    Short-pulse laser heating of aluminum and silicon thin films pair with presence of a minute vacuum gap in between them is considered and energy transfer across the thin films pair is predicted. The frequency dependent Boltzmann equation is used to predict the phonon intensity distribution along the films pair for three cycles of the repetitive short-pulse laser irradiation on the aluminum film surface. Since the gap size considered is within the Casimir limit, thermal radiation and ballistic phonon contributions to energy transfer across the vacuum gap is incorporated. The laser irradiated field is formulated in line with the Lambert's Beer law and it is considered as the volumetric source in the governing equations of energy transport. In order to assess the phonon intensity distribution in the films pair, equivalent equilibrium temperature is introduced. It is demonstrated that thermal separation of electron and lattice sub-systems in the aluminum film, due to the short-pulse laser irradiation, takes place and electron temperature remains high in the aluminum film while equivalent equilibrium temperature for phonons decays sharply in the close region of the aluminum film interface. This behavior is attributed to the phonon boundary scattering at the interface and the ballistic phonon transfer to the silicon film across the vacuum gap. Energy transfer due to the ballistic phonon contribution is significantly higher than that of the thermal radiation across the vacuum gap.

  17. Ballistic phonon and thermal radiation transport across a minute vacuum gap in between aluminum and silicon thin films: Effect of laser repetitive pulses on transport characteristics

    International Nuclear Information System (INIS)

    Yilbas, B.S.; Ali, H.

    2016-01-01

    Short-pulse laser heating of aluminum and silicon thin films pair with presence of a minute vacuum gap in between them is considered and energy transfer across the thin films pair is predicted. The frequency dependent Boltzmann equation is used to predict the phonon intensity distribution along the films pair for three cycles of the repetitive short-pulse laser irradiation on the aluminum film surface. Since the gap size considered is within the Casimir limit, thermal radiation and ballistic phonon contributions to energy transfer across the vacuum gap is incorporated. The laser irradiated field is formulated in line with the Lambert's Beer law and it is considered as the volumetric source in the governing equations of energy transport. In order to assess the phonon intensity distribution in the films pair, equivalent equilibrium temperature is introduced. It is demonstrated that thermal separation of electron and lattice sub-systems in the aluminum film, due to the short-pulse laser irradiation, takes place and electron temperature remains high in the aluminum film while equivalent equilibrium temperature for phonons decays sharply in the close region of the aluminum film interface. This behavior is attributed to the phonon boundary scattering at the interface and the ballistic phonon transfer to the silicon film across the vacuum gap. Energy transfer due to the ballistic phonon contribution is significantly higher than that of the thermal radiation across the vacuum gap.

  18. Syntheses of rare-earth metal oxide nanotubes by the sol-gel method assisted with porous anodic aluminum oxide templates

    International Nuclear Information System (INIS)

    Kuang Qin; Lin Zhiwei; Lian Wei; Jiang Zhiyuan; Xie Zhaoxiong; Huang Rongbin; Zheng Lansun

    2007-01-01

    In this paper, we report a versatile synthetic method of ordered rare-earth metal (RE) oxide nanotubes. RE (RE=Y, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb) oxide nanotubes were successfully prepared from corresponding RE nitrate solution via the sol-gel method assisted with porous anodic aluminum oxide (AAO) templates. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution TEM, and X-ray diffraction (XRD) have been employed to characterize the morphology and composition of the as-prepared nanotubes. It is found that as-prepared RE oxides evolve into bamboo-like nanotubes and entirely hollow nanotubes. A new possible formation mechanism of RE oxide nanotubes in the AAO channels is proposed. These high-quantity RE oxide nanotubes are expected to have promising applications in many areas such as luminescent materials, catalysts, magnets, etc. - Graphical abstract: A versatile synthetic method for the preparation of ordered rare-earth (RE) oxide nanotubes is reported, by which RE (RE=Y, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb) oxide nanotubes were successfully prepared from corresponding RE nitrate solution via the sol-gel method assisted with porous anodic aluminum oxide (AAO) templates

  19. Layered double hydroxide films on nanoporous anodic aluminum oxide/aluminum wire: a new fiber for rapid analysis of Origanum vulgare essential oils.

    Science.gov (United States)

    Piryaei, Marzieh

    2018-01-01

    Zn/Al layered double hydroxide (LDH) films were fabricated in situ with anodic aluminium oxide aluminium as both the substrate and the sole aluminium source by means of urea hydrolysis. Headspace solid phase microextraction using LDH fibre in combination with capillary GC-MS was utilised as a monitoring technique for the collection and detection of the volatile compounds of Origanum vulgare. Experimental parameters, including the sample weight, microwave power, extraction time and humidity effect, were examined and optimised.

  20. Removal of heavy metals from aluminum anodic oxidation wastewaters by membrane filtration.

    Science.gov (United States)

    Ates, Nuray; Uzal, Nigmet

    2018-05-27

    Aluminum manufacturing has been reported as one of the largest industries and wastewater produced from the aluminum industry may cause significant environmental problems due to variable pH, high heavy metal concentration, conductivity, and organic load. The management of this wastewater with a high pollution load is of great importance for practitioners in the aluminum sector. There are hardly any studies available on membrane treatment of wastewater originated from anodic oxidation. The aim of this study is to evaluate the best treatment and reuse alternative for aluminum industry wastewater using membrane filtration. Additionally, the performance of chemical precipitation, which is the existing treatment used in the aluminum facility, was also compared with membrane filtration. Wastewater originated from anodic oxidation coating process of an aluminum profile manufacturing facility in Kayseri (Turkey) was used in the experiments. The characterization of raw wastewater was in very low pH (e.g., 3) with high aluminum concentration and conductivity values. Membrane experiments were carried out with ultrafiltration (PTUF), nanofiltration (NF270), and reverse osmosis (SW30) membranes with MWCO 5000, 200-400, and 100 Da, respectively. For the chemical precipitation experiments, FeCl 3 and FeSO 4 chemicals presented lower removal performances for aluminum and chromium, which were below 35% at ambient wastewater pH ~ 3. The membrane filtration experimental results show that, both NF and RO membranes tested could effectively remove aluminum, total chromium and nickel (>90%) from the aluminum production wastewater. The RO (SW30) membrane showed a slightly higher performance at 20 bar operating pressure in terms of conductivity removal values (90%) than the NF 270 membrane (87%). Although similar removal performances were observed for heavy metals and conductivity by NF270 and SW30, significantly higher fluxes were obtained in NF270 membrane filtration at any pressure

  1. Electrochemical investigations of ion-implanted oxide films

    International Nuclear Information System (INIS)

    Schultze, J.W.; Danzfuss, B.; Meyer, O.; Stimming, U.

    1985-01-01

    Oxide films (passive films) of 40-50 nm thickness were prepared by anodic polarization of hafnium and titanium electrodes up to 20 V. Multiple-energy ion implantation of palladium, iron and xenon was used in order to obtain modified films with constant concentration profiles of the implanted ions. Rutherford backscattering, X-ray photoelectron spectroscopy measurements and electrochemical charging curves prove the presence of implanted ions, but electrochemical and photoelectrochemical measurements indicate that the dominating effect of ion implantation is the disordering of the oxide film. The capacity of hafnium electrodes increases as a result of an increase in the dielectric constant D. For titanium the Schottky-Mott analysis shows that ion implantation causes an increase in D and the donor concentration N. Additional electronic states in the band gap which are created by the implantation improve the conductivity of the semiconducting or insulating films. This is seen in the enhancement of electron transfer reactions and its disappearance during repassivation and annealing. Energy changes in the band gap are derived from photoelectrochemical measurements; the absorption edge of hafnium oxide films decreases by approximately 2 eV because of ion implantation, but it stays almost constant for titanium oxide films. All changes in electrochemical behavior caused by ion implantation show little variation with the nature of the implanted ion. Hence the dominating effect seems to be a disordering of the oxide. (Auth.)

  2. Behavior of aluminum oxide, intermetallics and voids in Cu-Al wire bonds

    International Nuclear Information System (INIS)

    Xu, H.; Liu, C.; Silberschmidt, V.V.; Pramana, S.S.; White, T.J.; Chen, Z.; Acoff, V.L.

    2011-01-01

    Nanoscale interfacial evolution in Cu-Al wire bonds during isothermal annealing from 175 deg. C to 250 deg. C was investigated by high resolution transmission electron microscopy (HRTEM). The native aluminum oxide film (∼5 nm thick) of the Al pad migrates towards the Cu ball during annealing. The formation of intermetallic compounds (IMC) is controlled by Cu diffusion, where the kinetics obey a parabolic growth law until complete consumption of the Al pad. The activation energies to initiate crystallization of CuAl 2 and Cu 9 Al 4 are 60.66 kJ mol -1 and 75.61 kJ mol -1 , respectively. During IMC development, Cu 9 Al 4 emerges as a second layer and grows together with the initial CuAl 2 . When Al is completely consumed, CuAl 2 transforms to Cu 9 Al 4 , which is the terminal product. Unlike the excessive void growth in Au-Al bonds, only a few voids nucleate in Cu-Al bonds after long-term annealing at high temperatures (e.g., 250 o C for 25 h), and their diameters are usually in the range of tens of nanometers. This is due to the lower oxidation rate and volumetric shrinkage of Cu-Al IMC compared with Au-Al IMC.

  3. Influence of sputtering deposition parameters on electrical and optical properties of aluminium-doped zinc oxide thin films for photovoltaic applications

    Directory of Open Access Journals (Sweden)

    Krawczak Ewelina

    2017-01-01

    Full Text Available Transparent Conductive Oxides (TCOs characterized by high visible transmittance and low electrical resistivity play an important role in photovoltaic technology. Aluminum doped zinc oxide (AZO is one of the TCOs that can find its application in thin film solar cells (CIGS or CdTe PV technology as well as in other microelectronic applications. In this paper some optical and electrical properties of ZnO:Al thin films deposited by RF magnetron sputtering method have been investigated. AZO layers have been deposited on the soda lime glass substrates with use of variable technological parameters such as pressure in the deposition chamber, power applied and temperature during the process. The composition of AZO films has been investigated by EDS method. Thickness and refraction index of the deposited layers in dependence on certain technological parameters of sputtering process have been determined by spectroscopic ellipsometry. The measurements of transmittance and sheet resistance were also performed.

  4. TL response to quartz and aluminum oxide grain for α-irradiation

    International Nuclear Information System (INIS)

    Pan Baolin; Wei Mingjian; Li Dongxu; Liu Zhaowen; Liu Chao; Zhao Shiyuan

    2009-01-01

    Thermoluminescence (TL) response for an α-ray irradiation system ( 241 Am) was examined with quartz grains of 11-40 μm. Quartz grains of different sizes, i.e. 137 Cs), before they were irradiated to different doses by the α-ray irradiation system. TL response to the quartz grain samples was measured. TL response of the quartz grains smaller than 4 μm and 11-40 μm to α-ray irradiation is the best, as the α-rays cannot penetrate quartz larger than 40 μm. The TL response characteristic is related with quartz grain surface area. TL responses to α-irradiation of 11-40 μm quartz and aluminum oxide grains were compared. The α-irradiation TL response of aluminum oxide (330 degree C) is better than the quartz (375 degree C). (authors)

  5. Improved Interfacial Bonding in Magnesium/Aluminum Overcasting Systems by Aluminum Surface Treatments

    Science.gov (United States)

    Zhang, Hui; Chen, Yiqing; Luo, Alan A.

    2014-12-01

    "Overcasting" technique is used to produce bimetallic magnesium/aluminum (Mg/Al) structures where lightweight Mg can be cast onto solid Al substrates. An inherent difficulty in creating strong Mg/Al interfacial bonding is the natural oxide film on the solid Al surfaces, which reduces the wettability between molten Mg and Al substrates during the casting process. In the paper, an "electropolishing + anodizing" surface treatment has been developed to disrupt the oxide film on a dilute Al-0.08 wt pct Ga alloy, improving the metallurgical bonding between molten Mg and Al substrates in the bimetallic experiments carried out in a high-vacuum test apparatus. The test results provided valuable information of the interfacial phenomena of the Mg/Al bimetallic samples. The results show significantly improved metallurgical bonding in the bimetallic samples with "electropolishing + anodizing" surface treatment and Ga alloying. It is recommended to adjust the pre-heating temperature and time of the Al substrates and the Mg melt temperature to control the interfacial reactions for optimum interfacial properties in the actual overcasting processes.

  6. Effective corrosion protection of AA6061 aluminum alloy by sputtered Al-Ce coatings

    International Nuclear Information System (INIS)

    Dominguez-Crespo, M.A.; Torres-Huerta, A.M.; Rodil, S.E.; Ramirez-Meneses, E.; Suarez-Velazquez, G.G.; Hernandez-Perez, M.A.

    2009-01-01

    Al-Ce coatings were deposited on silicon and AA6061 aluminum alloy substrates by DC magnetron sputtering using aluminum in combination with pure cerium targets. The materials were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and electrochemical impedance spectroscopy (EIS) in order to consider their application as high corrosion resistance coatings. The corrosion behavior of the films was studied using a NaCl aqueous solution (3.5 wt%). As for the characterization results, an apparent amorphous phase of aluminum oxide with small cerium compounds embedded in the matrix was detected by the X-ray diffraction patterns and HRTEM on the deposited films at 200 W and 4 Pa. At these conditions, AFM and SEM images evidenced crack-free coatings with low-roughness nanometric structures and columnar growth. EIS and Tafel results converged to indicate an inhibition of the corrosion reactions. The film displayed good stability in the aggressive medium and after 1 day of exposure underwent very little degradation. The variations in the impedance and Tafel characteristics were found to occur as a function of cerium content, which provokes important changes in the film protective properties.

  7. Effective corrosion protection of AA6061 aluminum alloy by sputtered Al-Ce coatings

    Energy Technology Data Exchange (ETDEWEB)

    Dominguez-Crespo, M.A., E-mail: mdominguezc@ipn.m [Instituto Politecnico Nacional, GIPMAT CICATA-Altamira, km 14.5, Carretera Tampico-Puerto Industrial Altamira, C.P. 89600 Altamira, Tamps (Mexico); Torres-Huerta, A.M. [Instituto Politecnico Nacional, GIPMAT CICATA-Altamira, km 14.5, Carretera Tampico-Puerto Industrial Altamira, C.P. 89600 Altamira, Tamps (Mexico); Rodil, S.E. [Instituto de Investigacion en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n, Ciudad Universitaria, Del. Coyoacan, C.P. 04510 Mexico, D.F. (Mexico); Ramirez-Meneses, E. [Instituto Politecnico Nacional, GIPMAT CICATA-Altamira, km 14.5, Carretera Tampico-Puerto Industrial Altamira, C.P. 89600 Altamira, Tamps (Mexico); Suarez-Velazquez, G.G. [Alumna del PTA del CICATA-Altamira IPN, km 14.5, Carretera Tampico-Puerto Industrial Altamira, C.P. 89600 Altamira, Tamps (Mexico); Hernandez-Perez, M.A. [Instituto Politecnico Nacional, ESIQIE, C.P. 07738 Mexico, D.F. (Mexico)

    2009-12-30

    Al-Ce coatings were deposited on silicon and AA6061 aluminum alloy substrates by DC magnetron sputtering using aluminum in combination with pure cerium targets. The materials were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and electrochemical impedance spectroscopy (EIS) in order to consider their application as high corrosion resistance coatings. The corrosion behavior of the films was studied using a NaCl aqueous solution (3.5 wt%). As for the characterization results, an apparent amorphous phase of aluminum oxide with small cerium compounds embedded in the matrix was detected by the X-ray diffraction patterns and HRTEM on the deposited films at 200 W and 4 Pa. At these conditions, AFM and SEM images evidenced crack-free coatings with low-roughness nanometric structures and columnar growth. EIS and Tafel results converged to indicate an inhibition of the corrosion reactions. The film displayed good stability in the aggressive medium and after 1 day of exposure underwent very little degradation. The variations in the impedance and Tafel characteristics were found to occur as a function of cerium content, which provokes important changes in the film protective properties.

  8. In-situ electrochemical doping of nanoporous anodic aluminum oxide with indigo carmine organic dye

    International Nuclear Information System (INIS)

    Stępniowski, Wojciech J.; Norek, Małgorzata; Budner, Bogusław; Michalska-Domańska, Marta; Nowak-Stępniowska, Agata; Bombalska, Aneta; Kaliszewski, Miron; Mostek, Anna; Thorat, Sanjay; Salerno, Marco; Giersig, Michael; Bojar, Zbigniew

    2016-01-01

    Nanoporous anodic aluminum oxide was formed in sulfuric acid with addition of indigo carmine. During anodizing, the organic dye was incorporated into the porous oxide walls. X-ray photoelectron spectroscopy revealed the presence of nitrogen and sulfur in the anodic aluminum oxide. Two types of incorporated sulfur were found: belonging to the sulfate anions SO_4"2"− of the electrolyte and belonging to the C-SO_3"− side groups of the indigo carmine. Raman spectroscopy confirmed the incorporation and showed that the inorganic–organic hybrid material inherited optical properties from the indigo carmine. Typical modes from pyrrolidone rings, unique for indigo carmine in the investigated system (650 and 1585 cm"−"1), were found to be the strongest for the greatest anodizing voltages used. Despite the indigo carmine incorporation, the morphology of the oxide is still nanoporous and its geometry is still tuned by the voltage applied during aluminum anodization. This work presents an inexpensive and facile approach to doping an inorganic oxide material with organic compounds. - Highlights: • Nanoporous anodic alumina was formed in electrolyte with indigo carmine. • XPS confirmed the presence of N and S in anodic alumina. • Raman spectroscopy revealed indigo carmine bands in anodic alumina. • The higher the voltage, the more indigo carmine was incorporated.

  9. Interface strength and degradation of adhesively bonded porous aluminum oxides

    NARCIS (Netherlands)

    Abrahami, S.T.; de Kok, John M.M.; Gudla, Visweswara C.; Ambat, Rajan; Terryn, H.A.; Mol, J.M.C.

    2017-01-01

    For more than six decades, chromic acid anodizing has been the main step in the surface treatment of aluminum for adhesively bonded aircraft structures. Soon this process, known for producing a readily adherent oxide with an excellent corrosion resistance, will be banned by strict international

  10. Growth of porous anodized alumina on the sputtered aluminum films with 2D–3D morphology for high specific surface area

    Energy Technology Data Exchange (ETDEWEB)

    Liao, M.W.; Chung, C.K., E-mail: ckchung@mail.ncku.edu.tw

    2014-08-01

    The porous anodic aluminum oxide (AAO) with high-aspect-ratio pore channels is widely used as a template for fabricating nanowires or other one-dimensional (1D) nanostructures. The high specific surface area of AAO can also be applied to the super capacitor and the supporting substrate for catalysis. The rough surface could be helpful to enhance specific surface area but it generally results in electrical field concentration even to ruin AAO. In this article, the aluminum (Al) films with the varied 2D–3D morphology on Si substrates were prepared using magnetron sputtering at a power of 50 W–185 W for 1 h at a working pressure of 2.5 × 10⁻¹ Pa. Then, AAO was fabricated from the different Al films by means of one-step hybrid pulse anodizing (HPA) between the positive 40 V and the negative -2 V (1 s:1 s) for 3 min in 0.3 M oxalic acid at a room temperature. The microstructure and morphology of Al films were characterized by X-ray diffraction, scanning electron microscope and atomic force microscope, respectively. Some hillocks formed at the high target power could be attributed to the grain texture growth in the normal orientation of Al(1 1 1). The 3D porous AAO structure which is different from the conventional 2D planar one has been successfully demonstrated using HPA on the film with greatly rough hillock-surface formed at the highest power of 185 W. It offers a potential application of the new 3D AAO to high specific surface area devices.

  11. Functional doped metal oxide films. Zinc oxide (ZnO) as transparent conducting oxide (TCO) titanium dioxide (TiO{sub 2}) as thermographic phosphor and protective coating

    Energy Technology Data Exchange (ETDEWEB)

    Nebatti Ech-Chergui, Abdelkader

    2011-07-29

    Metalorganic chemical vapor deposition (MOCVD) was used in the present work. Un-doped and Al-doped ZnO films were developed using two reactors: Halogen Lamp Reactor (HLR) (a type of Cold Wall Reactor) and Hot Wall Reactor (HWR), and a comparison was made between them in terms of the film properties. Zinc acetylacetonate was used as precursor for ZnO films while aluminum acetylacetonate was used for doping. The amount of Al doping can be controlled by varying the gas flow rate. Well ordered films with aluminum content between 0 and 8 % were grown on borosilicate glass and silicon. The films obtained are 0.3 to 0.5 {mu}m thick, highly transparent and reproducible. The growth rate of ZnO films deposited using HLR is less than HWR. In HLR, the ZnO films are well oriented along c-axis ((002) plane). ZnO films are commonly oriented along the c-axis due to its low surface free energy. On the other hand, the HWR films are polycrystalline and with Al doping these films aligned along the a-axis ((100) plane) which is less commonly observed. The best films were obtained with the HLR method showing a minimum electrical resistivity of 2.4 m{omega}cm and transmittance of about 80 % in the visible range. The results obtained for Al-doped films using HLR are promising to be used as TCOs. The second material investigated in this work was un-doped and doped titanium dioxide (TiO{sub 2}) films- its preparation and characterization. It is well known that thermographic phosphors can be used as an optical method for the surface temperature measurement. For this application, the temperature-dependent luminescence properties of europium (III)-doped TiO{sub 2} thin films were studied. It was observed that only europium doped anatase films show the phosphorescence. Rutile phase do not show phosphorescence. The films were prepared by the sol-gel method using the dip coating technique. The structures of the films were determined by X-ray diffraction (XRD). The excitation and the emission

  12. A Prediction Study of Aluminum Alloy Oxidation of the Fuel Cladding in Jordan Research and Training Reactor

    Energy Technology Data Exchange (ETDEWEB)

    Tahk, Y. W.; Oh, J. Y.; Lee, B. H.; Seo, C. G.; Chae, H. T.; Yim, J. S. [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2010-10-15

    U{sub 3}Si{sub 2}-Al dispersion fuel with Al cladding will be used for Jordan Research and Training Reactor (JRTR). Aluminum alloy cladding experiences the oxidation layer growth on the surface during the reactor operation. The formation of oxides on the cladding affects fuel performance by increasing fuel temperature. According to the current JRTR fuel management scheme and operation strategy for 5 MW power, a fresh fuel is discharged after 900 effective full power days (EFPD) with 18 cycles of 50 days loading. For the proper prediction of the aluminum oxide thickness of fuel cladding during the long residence time, a reliable model is needed. In this work, several oxide thickness prediction models are compared with the measured data from in-pile test by RERTR program. Moreover, specific parametric studies and a preliminary prediction of the aluminum alloy oxidation using the latest model are performed for JRTR fuel

  13. Preparation of Phosphonic Acid Functionalized Graphene Oxide-modified Aluminum Powder with Enhanced Anticorrosive Properties

    Science.gov (United States)

    He, Lihua; Zhao, Yan; Xing, Liying; Liu, Pinggui; Wang, Zhiyong; Zhang, Youwei; Liu, Xiaofang

    2017-07-01

    To improve the anticorrosive performance of aluminum powder, a common functional filler in polymer coatings, we report a novel method to prepare graphene oxide modified aluminum powder (GO-Al) using 3-aminoproplyphosphoic acid as "link" agent. The GO nanosheets were firstly functionalized with 3-aminoproplyphosphoic acid (APSA) by the reaction of amine groups of APSA and the epoxy groups of GO. Subsequently, a layer of GO nanosheets uniformly and tightly covered the surface of flaky aluminum particle though the strong linking strength between -PO(OH)2 functional groups of the modified GO and aluminum. The hydrogen evolution experiment suggests that the GO attached on the aluminum powder could effectively improve the anticorrosive performance of the pigments.

  14. Surface and sub-surface thermal oxidation of thin ruthenium films

    Energy Technology Data Exchange (ETDEWEB)

    Coloma Ribera, R.; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F. [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Kokke, S.; Zoethout, E. [FOM Dutch Institute for Fundamental Energy Research (DIFFER), P.O. Box 1207, 3430 BE Nieuwegein (Netherlands)

    2014-09-29

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low density and high density oxides. Nano-columns grow at the surface of the low density oxide layer, with the growth rate being limited by diffusion of ruthenium through the formed oxide film. Simultaneously, with the growth of the columns, sub-surface high density oxide continues to grow limited by diffusion of oxygen or ruthenium through the oxide film.

  15. Electrochemistry of hydrous oxide films

    International Nuclear Information System (INIS)

    Burke, L.D.; Lyons, M.E.G.

    1986-01-01

    The formation, acid-base properties, structural aspects, and transport processes of hydrous oxide films are discussed. Classical and nonclassical theoretical models of the oxide-solution interface are compared. Monolayer oxidation, behavior, and crystal growth of oxides on platinum, palladium, gold, iridium, rhodium, ruthenium, and some non-noble metals, including tungsten, are reviewed and compared

  16. Electrochromism of the electroless deposited cuprous oxide films

    International Nuclear Information System (INIS)

    Neskovska, R.; Ristova, M.; Velevska, J.; Ristov, M.

    2007-01-01

    Thin cuprous oxide films were prepared by a low cost, chemical deposition (electroless) method onto glass substrates pre-coated with fluorine doped tin oxide. The X-ray diffraction pattern confirmed the Cu 2 O composition of the films. Visible transmittance spectra of the cuprous oxide films were studied for the as-prepared, colored and bleached films. The cyclic voltammetry study showed that those films exhibited cathode coloring electrochromism, i.e. the films showed change of color from yellowish to black upon application of an electric field. The transmittance across the films for laser light of 670 nm was found to change due to the voltage change for about 50%. The coloration memory of those films was also studied during 6 h, ex-situ. The coloration efficiency at 670 nm was calculated to be 37 cm 2 /C

  17. Irradiation behavior of uranium oxide - Aluminum dispersion fuel

    International Nuclear Information System (INIS)

    Hofman, Gerard L.; Rest, Jeffrey; Snelgrove, James L.

    1996-01-01

    An oxide version of the DART code has been generated in order to assess the irradiation behavior of UO 2 -Al dispersion fuel. The aluminum-fuel interaction models were developed based on U 3 O 8 -Al irradiation data. Deformation of the fuel element occurs due to fuel particle swelling driven by both solid and gaseous fission products and as a consequence of the interaction between the fuel particles and the aluminum matrix. The calculations show that, with the assumption that the correlations derived from U 3 O 8 are valid for UO 2 , the LEU UO 2 -Al with a 42% fuel volume loading (4 g U/cm 3 ) irradiated at fuel temperatures greater than 413 K should undergo breakaway swelling at core burnups greater than about 1.12 x 10 27 fissions m -3 (∼63% 235 U burnup). (author)

  18. Irradiation behavior of uranium oxide-aluminum dispersion fuel

    International Nuclear Information System (INIS)

    Hofman, G.L.; Rest, J.; Snelgrove, J.L.

    1996-01-01

    An oxide version of the DART code has been generated in order to assess the irradiation behavior of UO 2 -Al dispersion fuel. The aluminum-fuel interaction models were developed based on U 3 O 8 -Al irradiation data. Deformation of the fuel element occurs due to fuel particle swelling driven by both solid and gaseous fission products, as well as a consequence of the interaction between the fuel particles and the aluminum matrix. The calculations show, that with the assumption that the correlations derived from U 3 O 8 are valid for UO 2 , the LEU UO 2 -Al with a 42% fuel volume loading (4 gm/cc) irradiated at fuel temperatures greater than 413 K should undergo breakaway swelling at core burnups greater than about 1.12 x 10 27 fissions m -3 (∼ 63% 235 U burnup)

  19. Core–Shell Electrospun Hollow Aluminum Oxide Ceramic Fibers

    Directory of Open Access Journals (Sweden)

    Jonathan W. Rajala

    2015-10-01

    Full Text Available In this work, core–shell electrospinning was employed as a simple method for the fabrication of composite coaxial polymer fibers that became hollow ceramic tubes when calcined at high temperature. The shell polymer solution consisted of polyvinyl pyrollidone (PVP in ethanol mixed with an aluminum acetate solution to act as a ceramic precursor. The core polymer was recycled polystyrene to act as a sacrificial polymer that burned off during calcination. The resulting fibers were analyzed with X-ray diffraction (XRD and energy dispersive spectroscopy (EDS to confirm the presence of gamma-phase aluminum oxide when heated at temperatures above 700 °C. The fiber diameter decreased from 987 ± 19 nm to 382 ± 152 nm after the calcination process due to the polymer material being burned off. The wall thickness of these fibers is estimated to be 100 nm.

  20. Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering

    International Nuclear Information System (INIS)

    Dubois, Marc-Alexandre; Muralt, Paul

    2001-01-01

    Polycrystalline aluminum nitride thin films were deposited onto platinum, aluminum, and titanium electrodes by reactive magnetron sputtering in the pulsed direct current mode. The films exhibited all a columnar microstructure and a c-axis texture. The built-in stress and the piezoelectric properties of these films were studied as a function of both the processing conditions and the electrode material. Stress was found to be very much dependent on the growth conditions, and values ranging from strong compression to high tension were observed. The piezoelectric d 33,f coefficient was shown to rely on substrate quality and ionic bombardment: The nucleation surface must be stable with regard to the nitrogen plasma and present a hexagonal symmetry and, on the other hand, enough energy must be delivered to the growing film through ionic bombardment. [copyright] 2001 American Institute of Physics

  1. Fabrication of a capacitive relative humidity sensor using aluminum thin films deposited on etched printed circuit board

    Directory of Open Access Journals (Sweden)

    Lee Jacqueline Ann L.

    2016-01-01

    Full Text Available A capacitive humidity-sensing device was created by thermal evaporation of 99.999% aluminum. The substrate used for the coating was etched double-sided printed circuit board. The etched printed circuit board serves as the dielectric of the capacitor while the aluminum thin films deposited on either side serve as the plates of the capacitor. The capacitance was measured before and after exposure to humidity. The device was then calibrated by comparing the readings of capacitance with that of the relative humidity sensor of the Vernier LabQuest2. It was found that there is a linear relationship between the capacitance and relative humidity given by the equation C=1.418RH+29.139 where C is the capacitance and RH is the relative humidity. The surface of the aluminum films is porous and it is through these pores that water is adsorbed and capillary condensation occurs, thereby causing the capacitance to change upon exposure to humidity.

  2. Investigation of ferromagnetism in oxygen deficient hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Krockenberger, Yoshiharu; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Suter, Andreas [PSI, Villingen (Switzerland); Wilhelm, Fabrice; Rogalev, Andrei [ESRF, Grenoble (France)

    2008-07-01

    Oxygen deficient thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. RF-activated oxygen was used for the in situ oxidation of hafnium oxide thin films. Oxidation conditions were varied substantially in order to create oxygen deficiency in hafnium oxide films intentionally. The films were characterized by X-ray and magnetic measurements. X-ray diffraction studies show an increase in lattice parameter with increasing oxygen deficiency. Oxygen deficient hafnium oxide thin films also showed a decreasing bandgap with increase in oxygen deficiency. The magnetisation studies carried out with SQUID did not show any sign of ferromagnetism in the whole oxygen deficiency range. X-ray magnetic circular dichroism measurements also confirmed the absence of ferromagnetism in oxygen deficient hafnium oxide thin films.

  3. Molecularly ordered aluminum tris-(8-hydroxyquinoline) thin films grown by hot-wall deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tapponnier, A. [Nonlinear Optics Laboratory, Institute of Quantum Electronics, Swiss Federal Institute of Technology Zuerich (ETH), CH-8093 Zurich (Switzerland)]. E-mail: axelle@phys.ethz.ch; Khan, R.U.A. [Nonlinear Optics Laboratory, Institute of Quantum Electronics, Swiss Federal Institute of Technology Zuerich (ETH), CH-8093 Zurich (Switzerland); Marcolli, C. [Institute of Atmospheric and Climate Sciences, Swiss Federal Institute of Technology Zuerich (ETH), CH-8092 Zurich (Switzerland); Guenter, P. [Nonlinear Optics Laboratory, Institute of Quantum Electronics, Swiss Federal Institute of Technology Zuerich (ETH), CH-8093 Zurich (Switzerland)

    2007-01-22

    We report on the growth and microstructural analysis of molecularly ordered thin film layers of aluminum tris-(8-hydroxyquinoline) (Alq{sub 3}) by hot-wall deposition onto amorphous glass substrates. Using transmission electron microscopy (TEM), ordering on a scale of 100 nm was observed. Raman measurements of these films indicated that they corresponded to the {alpha}-polymorph of crystalline Alq{sub 3}, and photoluminescence measurements exhibited a single broad peak centered at 500 nm, which is also consistent with the {alpha}-form. As a comparison, we deposited films of Alq3 using organic molecular beam deposition (OMBD), which exhibited no molecular ordering from the TEM studies. For these films, strong point-to-point variations in the Raman spectrum, and the existence of a double peak in the photoluminescence at 500 and 522 nm were observed. These measurements indicate that the OMBD films possess a mixture of both {alpha} and amorphous phases.

  4. Preparation and thermal properties of form-stable palmitic acid/active aluminum oxide composites as phase change materials for latent heat storage

    International Nuclear Information System (INIS)

    Fang, Guiyin; Li, Hui; Cao, Lei; Shan, Feng

    2012-01-01

    Form-stable palmitic acid (PA)/active aluminum oxide composites as phase change materials were prepared by adsorbing liquid palmitic acid into active aluminum oxide. In the composites, the palmitic acid was used as latent heat storage materials, and the active aluminum oxide was used as supporting material. Fourier transformation infrared spectroscope (FT-IR), X-ray diffractometer (XRD) and scanning electronic microscope (SEM) were used to determine the chemical structure, crystalloid phase and microstructure of the composites, respectively. The thermal properties and thermal stability were investigated by a differential scanning calorimeter (DSC) and a thermogravimetry analyzer (TGA). The FT-IR analyses results indicated that there is no chemical interaction between the palmitic acid and active aluminum oxide. The SEM results showed that the palmitic acid was well adsorbed into porous network of the active aluminum oxide. The DSC results indicated that the composites melt at 60.25 °C with a latent heat of 84.48 kJ kg −1 and solidify at 56.86 °C with a latent heat of 78.79 kJ kg −1 when the mass ratio of the PA to active aluminum oxide is 0.9:1. Compared with that of the PA, the melting and solidifying time of the composites CPCM5 was reduced by 20.6% and 21.4% because of the increased heat transfer rate through EG addition. The TGA results showed that the active aluminum oxide can improve the thermal stability of the composites. -- Highlights: ► Form-stable PA/active aluminum oxide composites as PCMs were prepared. ► Chemical structure, crystalloid phase and microstructure of composites were determined. ► Thermal properties and thermal stability of the composites were investigated. ► Expanded graphite can improve thermal conductivity of the composites.

  5. In-situ monitoring of the growth of nanostructured aluminum thin film

    Czech Academy of Sciences Publication Activity Database

    Novotný, Michal; Bulíř, Jiří; Lančok, Ján; Pokorný, Petr; Bodnár, Michal

    2011-01-01

    Roč. 5, č. 5 (2011), "051503-1"-"051503-10" ISSN 1934-2608 R&D Projects: GA AV ČR IAA100100718; GA AV ČR IAA100100729; GA ČR GP202/09/P324 Institutional research plan: CEZ:AV0Z10100522 Keywords : aluminum ultrathin film * magnetron sputtering * in-situ monitoring * electrical conductivity * spectral ellipsometry * optical emission spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.570, year: 2011

  6. Material properties of novel polymeric films

    Science.gov (United States)

    Kim, Gene

    This dissertation will study the material properties of two types of novel polymer films (polyelectrolyte multilayer films and photolithographic polymer films). The formation of polylelectrolyte multilayer films onto functionalized aluminum oxide surfaces and functionalized poly(ethylene terephthaltate) (PET) were studied. Functionalization of the aluminum oxide surfaces was achieved via silane coupling. Functionalization of PET surfaces was achieved via hydrolysis and amidation. Surface characterization techniques such as X-ray photoelectron spectroscopy (XPS) and dynamic contact angle measurements were used to monitor the polyelectrolyte multilayer formation. Mechanical properties of the aluminum oxide supported polyelectrolyte multilayer films were tested using a simplified peel test. XPS was used to analyze the surfaces before and after peel. Single lap shear joint specimens were constructed to test the adhesive shear strength of the PET-supported polyelectrolyte multilayer film samples with the aid of a cyanoacrylate adhesive. The adhesive shear strength and its relation with the type of functionalization, number of polyelectrolyte layers, and the effect of polyelectrolyte conformation using added salt were explored. Also, characterization on the single lap joints after adhesive failure was carried out to determine the locus of failure within the multilayers by using XPS and SEM. Two types of photolithographic polymers were formulated and tested. These two polymers (photocrosslinkable polyacrylate (PUA), and a photocrosslinkable polyimide (HRP)) were used to investigate factors that would affect the structural integrity of these particular polymers under environmental variables such as processing (time, UV cure, pressure, and temperature) and ink exposure. Thermomechanical characterization was carried out to see the behavior of these two polymers under these environmental variables. Microscopic techniques were employed to study the morphological behavior of

  7. Structural evolution, electrical and optical properties of AZO films ...

    Indian Academy of Sciences (India)

    Administrator

    Aluminum-doped zinc oxide (AZO) target was fabricated using AZO ... All AZO films show c-axis preferred orientation and hexagonal structure. With increasing film thick- ness from 153 to 1404 nm, the crystallinity was improved and the angle of (002) peak was close to ... For observing grain boundary and size, the target was.

  8. Auger electron spectroscopy study of initial stages of oxidation in a copper - 19.6-atomic-percent-aluminum alloy

    Science.gov (United States)

    Ferrante, J.

    1973-01-01

    Auger electron spectroscopy was used to examine the initial stages of oxidation of a polycrystalline copper - 19.6 a/o-aluminum alloy. The growth of the 55-eV aluminum oxide peak and the decay of the 59-, 62-, and 937-eV copper peaks were examined as functions of temperature, exposure, and pressure. Pressures ranged from 1x10 to the minus 7th power to 0.0005 torr of O2. Temperatures ranged from room temperature to 700 C. A completely aluminum oxide surface layer was obtained in all cases. Complete disappearance of the underlying 937-eV copper peak was obtained by heating at 700 C in O2 at 0.0005 torr for 1 hr. Temperature studies indicated that thermally activated diffusion was important to the oxidation studies. The initial stages of oxidation followed a logarithmic growth curve.

  9. Unidirectional oxide hetero-interface thin-film diode

    International Nuclear Information System (INIS)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-01-01

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2  Hz < f < 10 6  Hz, providing a high feasibility for practical applications

  10. Unidirectional oxide hetero-interface thin-film diode

    Energy Technology Data Exchange (ETDEWEB)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

  11. Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1997-11-21

    The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

  12. Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Harman, J.P.; Kabulski, A. (West Virginia U., Morgantown, WV); Pagan, V.R. (West Virginia U., Morgantown, WV); Famouri, K. (West Virginia U., Morgantown, WV); Kasarla, K.R.; Rodak, L.E. (West Virginia U., Morgantown, WV); Hensel, J.P.; Korakakis, D.

    2008-07-01

    The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

  13. Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Harman, J.; Kabulski, A.; Pagán, V. R.; Famouri, P.; Kasarla, K. R.; Rodak, L. E.; Peter Hensel, J.; Korakakis, D.

    2008-01-01

    The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

  14. Photoinduced hydrophobic surface of graphene oxide thin films

    International Nuclear Information System (INIS)

    Zhang Xiaoyan; Song Peng; Cui Xiaoli

    2012-01-01

    Graphene oxide (GO) thin films were deposited on transparent conducting oxide substrates and glass slides by spin coating method at room temperature. The wettability of GO thin films before and after ultraviolet (UV) irradiation was characterized with water contact angles, which increased from 27.3° to 57.6° after 3 h of irradiation, indicating a photo-induced hydrophobic surface. The UV–vis absorption spectra, Raman spectroscopy, X-ray photoelectron spectroscopy, and conductivity measurements of GO films before and after UV irradiation were taken to study the mechanism of photoinduced hydrophobic surface of GO thin films. It is demonstrated that the photoinduced hydrophobic surface is ascribed to the elimination of oxygen-containing functional groups on GO molecules. This work provides a simple strategy to control the wettability properties of GO thin films by UV irradiation. - Highlights: ► Photoinduced hydrophobic surface of graphene oxide thin films has been demonstrated. ► Elimination of oxygen-containing functional groups in graphene oxide achieved by UV irradiation. ► We provide novel strategy to control surface wettability of GO thin films by UV irradiation.

  15. Oxidation phase growth diagram of vanadium oxides film fabricated by rapid thermal annealing

    Institute of Scientific and Technical Information of China (English)

    Tamura KOZO; Zheng-cao LI; Yu-quan WANG; Jie NI; Yin HU; Zheng-jun ZHANG

    2009-01-01

    Thermal evaporation deposited vanadium oxide films were annealed in air by rapid thermal annealing (RTP). By adjusting the annealing temperature and time, a series of vanadium oxide films with various oxidation phases and surface morphologies were fabricated, and an oxidation phase growth diagram was established. It was observed that different oxidation phases appear at a limited and continuous annealing condition range, and the morphologic changes are related to the oxidation process.

  16. Low-Cost Repairable Oxidation Resistant Coatings for Carbon-Carbon Composites via CCVD

    National Research Council Canada - National Science Library

    Hendrick, Michelle

    2000-01-01

    ...) thin film process to yield oxidation resistant coatings on carbon-carbon (C-C) composites. Work was on simple coatings at this preliminary stage of investigation, including silicon dioxide, platinum and aluminum oxide...

  17. Electronic structure investigation of oxidized aluminium films with electron momentum spectroscopy

    International Nuclear Information System (INIS)

    Guo, X.; Canney, S.; Kheifets, A.S.; Vos, M.; Fang, Z.; Utteridge, S.; McCarthy, I.E.; Weigold, E.

    1996-09-01

    Electron momentum spectroscopy (EMS) of (e, 2e) measurements with oxidized aluminium thin films have been performed. Due to the surface sensitive mature of the EMS spectrometer employed the measured (e, 2e) events come from the front oxidized layer as viewed by the electron detectors. The measurements show clearly two major features in the spectral momentum density distribution and they are related to the upper valence band and the lower valence band of aluminum oxide. The first is a 'dual parabola' energy-momentum dispersion pattern spanning about 8 eV in the upper valence band. This 'dual parabola' pattern has been qualitatively reproduced by a linear muffin-tin orbital (LMTO) calculation on spherically averaged α-A1 2 O 3 with nearly the same energy span. In the lower valence band, the LMTO calculation indicates a dispersion spanning about 5 eV, and the measured spectral momentum density plot shows a similar 'bowl' shape but with less dispersion. The possible causes which blur the dispersion in the lower valence band are discussed. Other features in the spectral momentum density distribution are also discussed and compared with the LMTO calculation. 45 refs., 1 tab., 10 figs

  18. In-situ electrochemical doping of nanoporous anodic aluminum oxide with indigo carmine organic dye

    Energy Technology Data Exchange (ETDEWEB)

    Stępniowski, Wojciech J., E-mail: wojciech.stepniowski@wat.edu.pl [Department of Advanced Materials and Technology, Faculty of Advanced Technology and Chemistry, Military University of Technology, 2 Kaliskiego Str., 00-908 Warszawa (Poland); Norek, Małgorzata [Department of Advanced Materials and Technology, Faculty of Advanced Technology and Chemistry, Military University of Technology, 2 Kaliskiego Str., 00-908 Warszawa (Poland); Budner, Bogusław [Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warszawa (Poland); Michalska-Domańska, Marta [Department of Advanced Materials and Technology, Faculty of Advanced Technology and Chemistry, Military University of Technology, 2 Kaliskiego Str., 00-908 Warszawa (Poland); Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warszawa (Poland); Nowak-Stępniowska, Agata; Bombalska, Aneta; Kaliszewski, Miron [Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warszawa (Poland); Mostek, Anna [Department of Advanced Materials and Technology, Faculty of Advanced Technology and Chemistry, Military University of Technology, 2 Kaliskiego Str., 00-908 Warszawa (Poland); Thorat, Sanjay; Salerno, Marco [Department of Nanophysics, Istituto Italiano di Tecnologia, via Morego 30, Genova I-16163 (Italy); Giersig, Michael [Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, 14195 Berlin (Germany); Bojar, Zbigniew [Department of Advanced Materials and Technology, Faculty of Advanced Technology and Chemistry, Military University of Technology, 2 Kaliskiego Str., 00-908 Warszawa (Poland)

    2016-01-01

    Nanoporous anodic aluminum oxide was formed in sulfuric acid with addition of indigo carmine. During anodizing, the organic dye was incorporated into the porous oxide walls. X-ray photoelectron spectroscopy revealed the presence of nitrogen and sulfur in the anodic aluminum oxide. Two types of incorporated sulfur were found: belonging to the sulfate anions SO{sub 4}{sup 2−} of the electrolyte and belonging to the C-SO{sub 3}{sup −} side groups of the indigo carmine. Raman spectroscopy confirmed the incorporation and showed that the inorganic–organic hybrid material inherited optical properties from the indigo carmine. Typical modes from pyrrolidone rings, unique for indigo carmine in the investigated system (650 and 1585 cm{sup −1}), were found to be the strongest for the greatest anodizing voltages used. Despite the indigo carmine incorporation, the morphology of the oxide is still nanoporous and its geometry is still tuned by the voltage applied during aluminum anodization. This work presents an inexpensive and facile approach to doping an inorganic oxide material with organic compounds. - Highlights: • Nanoporous anodic alumina was formed in electrolyte with indigo carmine. • XPS confirmed the presence of N and S in anodic alumina. • Raman spectroscopy revealed indigo carmine bands in anodic alumina. • The higher the voltage, the more indigo carmine was incorporated.

  19. Effect of hydrogen on stresses in anodic oxide film on titanium

    International Nuclear Information System (INIS)

    Kim, Joong-Do; Pyun, Su-Il; Seo, Masahiro

    2003-01-01

    Stresses in anodic oxide film on titanium thin film/glass electrode in pH 8.4 borate solution were investigated by a bending beam method. The increases in compressive stress observed with cathodic potential sweeps after formation of anodic oxide film were attributed to the volume expansion due to the compositional change of anodic oxide film from TiO 2 to TiO 2-x (OH) x . The instantaneous responses of changes in stress, Δσ, in the anodic oxide film to potential steps demonstrated the reversible characteristic of the TiO 2-x (OH) x formation reaction. In contrast, the transient feature of Δσ for the titanium without anodic oxide film represented the irreversible formation of TiH x at the metal/oxide interphase. The large difference in stress between with and without the oxide film, has suggested that most of stresses generated during the hydrogen absorption/desorption reside in the anodic oxide film. A linear relationship between changes in stress, Δ(Δσ) des , and electric charge, ΔQ des , during hydrogen desorption was found from the current and stress transients, manifesting that the stress changes were crucially determined by the amount of hydrogen desorbed from the oxide film. The increasing tendency of -Δ(Δσ) des with increasing number of potential steps and film formation potential were discussed in connection with the increase in desorption amount of hydrogen in the oxide film with increasing absorption/desorption cycles and oxide film thickness

  20. Evaluating Origin of Electron Traps in Tris(8-hydroxyquinoline) Aluminum Thin Films using Thermally Stimulated Current Technique

    OpenAIRE

    Matsushima, Toshinori; Adachi, Chihaya

    2008-01-01

    We measured the energy distributions and concentrations of electron traps in O_2-unexposed and O_2-exposed tris(8-hydroxyquinoline) aluminum (Alq_3) films using a thermally stimulated current (TSC) technique to investigate how doping O_2 molecules in Alq_3 films affect the films' electron trap and electron transport characteristics. The results of our TSC studies revealed that Alq_3 films have an electron trap distribution with peak depths ranging from 0.075 to 0.1 eV and peak widths ranging ...

  1. Pull-test adhesion measurements of diamondlike carbon films on silicon carbide, silicon nitride, aluminum oxide, and zirconium oxide

    Energy Technology Data Exchange (ETDEWEB)

    Erck, R.A.; Nichols, F.A. [Argonne National Lab., IL (United States); Dierks, J.F. [North Dakota State Univ., Fargo, ND (United States)

    1993-10-01

    Hydrogenated amorphous carbon films or diamondlike carbon (DLC) films were formed by ion-beam deposition of 400 eV methane (CH{sub 4}) ions on several smooth and rough ceramics, as well as on ceramics coated with a layer of Si and Ti. Adhesion was measured by the pin-pull method. Excellent adhesion was measured for smooth SiC and Si{sub 3}N{sub 4}, but adhesion of DLC to Al{sub 2}O{sub 3} and ZrO{sub 2} was negligible. The use of a Si bonding interlayer produced good adhesion to all the substrates, but a Ti layer was ineffective because bonding between the DLC film and Ti was poor. The presence of surface roughness appeared to greatly increase the measured adhesion in all cases. Bulk thermodynamic calculations are not directly applicable to bonding at the interface. If the standard enthalpy of formation for reaction between CH{sub 4} and substrate is calculated assumpting a carbide or carbon phase is produced, a relation is seen between reaction enthalpy and relative adhesion. Large positive enthalpies are associated with poor adhesion; negative or small positive enthalpies are associated with good adhesion. This relation between enthalpy and adhesion was also observed for DLC deposited on Si. Lack of adhesion to Ti was attributed to inadvertent formation of a surface oxide layer that rendered the enthalpy for reaction with CH{sub 4} strongly positive and similar in magnitude to that for Al{sub 2}O{sub 3} and ZrO{sub 2}.

  2. SPH based modelling of oxide and oxide film formation in gravity die castings

    International Nuclear Information System (INIS)

    Ellingsen, K; M'Hamdi, M; Coudert, T

    2015-01-01

    Gravity die casting is an important casting process which has the capability of making complicated, high-integrity components for e.g. the automotive industry. Oxides and oxide films formed during filling affect the cast product quality. The Smoothed particle hydrodynamics (SPH) method is particularly suited to follow complex flows. The SPH method has been used to study filling of a gravity die including the formation and transport of oxides and oxide films for two different filling velocities. A low inlet velocity leads to a higher amount of oxides and oxide films in the casting. The study demonstrates the usefulness of the SPH method for an increased understanding of the effect of different filling procedures on the cast quality. (paper)

  3. Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Broas, Mikael, E-mail: mikael.broas@aalto.fi; Vuorinen, Vesa [Department of Electrical Engineering and Automation, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sippola, Perttu; Pyymaki Perros, Alexander; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sajavaara, Timo [Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40014 Jyväskylä (Finland); Paulasto-Kröckel, Mervi [Department of Electrical Engineering and Automation, Aalto University. P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland)

    2016-07-15

    Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N{sub 2}:H{sub 2} plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the AlN films. Furthermore, dinitrogen triple bonds were identified with infrared spectroscopy in the films. The triple bonds broke after annealing at 1000 °C for 1 h which likely caused enhanced hydrolysis of the films. The nanostructure of the films was identified to be amorphous in the as-deposited state and to become nanocrystalline after 1 h of annealing at 1000 °C.

  4. Preparation of thin hexagonal highly-ordered anodic aluminum oxide (AAO) template onto silicon substrate and growth ZnO nanorod arrays by electrodeposition

    Science.gov (United States)

    Chahrour, Khaled M.; Ahmed, Naser M.; Hashim, M. R.; Elfadill, Nezar G.; Qaeed, M. A.; Bououdina, M.

    2014-12-01

    In this study, anodic aluminum oxide (AAO) templates of Aluminum thin films onto Ti-coated silicon substrates were prepared for growth of nanostructure materials. Hexagonally highly ordered thin AAO templates were fabricated under controllable conditions by using a two-step anodization. The obtained thin AAO templates were approximately 70 nm in pore diameter and 250 nm in length with 110 nm interpore distances within an area of 3 cm2. The difference between first and second anodization was investigated in details by in situ monitoring of current-time curve. A bottom barrier layer of the AAO templates was removed during dropping the voltage in the last period of the anodization process followed by a wet etching using phosphoric acid (5 wt%) for several minutes at ambient temperature. As an application, Zn nanorod arrays embedded in anodic alumina (AAO) template were fabricated by electrodeposition. Oxygen was used to oxidize the electrodeposited Zn nanorods in the AAO template at 700 °C. The morphology, structure and photoluminescence properties of ZnO/AAO assembly were analyzed using Field-emission scanning electron microscope (FESEM), Energy dispersive X-ray spectroscopy (EDX), Atomic force microscope (AFM), X-ray diffraction (XRD) and photoluminescence (PL).

  5. Effect of Aluminum Doping on the Nanocrystalline ZnS:Al3+ Films Fabricated on Heavily-Doped p-type Si(100) Substrates by Chemical Bath Deposition Method

    Science.gov (United States)

    Zhu, He-Jie; Liang, Yan; Gao, Xiao-Yong; Guo, Rui-Fang; Ji, Qiang-Min

    2015-06-01

    Intrinsic ZnS and aluminum-doped nanocrystalline ZnS (ZnS:Al3+) films with zinc-blende structure were fabricated on heavily-doped p-type Si(100) substrates by chemical bath deposition method. Influence of aluminum doping on the microstructure, and photoluminescent and electrical properties of the films, were intensively investigated. The average crystallite size of the films varying in the range of about 9.0 ˜ 35.0 nm initially increases and then decreases with aluminum doping contents, indicating that the crystallization of the films are initially enhanced and then weakened. The incorporation of Al3+ was confirmed from energy dispersive spectrometry and the induced microstrain in the films. Strong and stable visible emission band resulting from the defect-related light emission were observed for the intrinsic ZnS and ZnS:Al3+ films at room temperature. The photoluminescence related to the aluminum can annihilate due to the self-absorption of ZnS:Al3+ when the Al3+ content surpasses certain value. The variation of the resistivity of the films that initially reduces and then increases is mainly caused by the partial substitute for Zn2+ by Al3+ as well as the enhanced crystallization, and by the enhanced crystal boundary scattering, respectively.

  6. Formation of corrosion-resistant oxide film on uranium

    International Nuclear Information System (INIS)

    Petit, G.S.

    1976-01-01

    A vacuum heat-treatment method was developed for coating metallic uranium with an adherent protective film of uranium oxide. The film is prepared by vacuum heat-treating the metallic uranium at 625 0 C for 1 h while controlling the amount of oxygen being metered into the furnace. Uranium coupons with the protective film were exposed for several hundred hours in a corrosion test bath at 95 0 C and 100 percent RH without corroding. Film thicknesses ranging from 5 to 25 μm (0.0002 to 0.001 in.) were prepared and corrosion tested; the film thickness can be controlled to less than +-2.5 μm (+-0.0001 in.). The oxide film is hard, nonwetting, and very adherent. The resulting surface finish of the metal is equivalent to that of the original finish. The advantages of the oxide films over other protective coatings are given. 12 fig

  7. The fabrication and thermal properties of bismuth-aluminum oxide nanothermometers.

    Science.gov (United States)

    Wang, Chiu-Yen; Chen, Shih-Hsun; Tsai, Ping-Hsin; Chiou, Chung-Han; Hsieh, Sheng-Jen

    2017-01-27

    Bismuth (Bi) nanowires, well controlled in length and diameter, were prepared by using an anodic aluminum oxide (AAO) template-assisted molding injection process with a high cooling rate. A high performance atomic layer deposition (ALD)-capped bismuth-aluminum oxide (Bi-Al 2 O 3 ) nanothermometer is demonstrated that was fabricated via a facile, low-cost and low-temperature method, including AAO templated-assisted molding injection and low-temperature ALD-capped processes. The thermal behaviors of Bi nanowires and Bi-Al 2 O 3 nanocables were studied by in situ heating transmission electron microscopy. Linear thermal expansion of liquid Bi within native bismuth oxide nanotubes and ALD-capped Bi-Al 2 O 3 nanocables were evaluated from 275 °C to 700 °C and 300 °C to 1000 °C, respectively. The results showed that the ALD-capped Bi-Al 2 O 3 nanocable possesses the highest working temperature, 1000 °C, and the broadest operation window, 300 °C-1000 °C, of a thermal-expanding type nanothermometer. Our innovative approach provides another way of fabricating core-shell nanocables and to further achieve sensing local temperature under an extreme high vacuum environment.

  8. Study of film graphene/graphene oxide obtained by partial reduction chemical of oxide graphite

    International Nuclear Information System (INIS)

    Gascho, J.L.S.; Costa, S.F.; Hoepfner, J.C.; Pezzin, S.H.

    2014-01-01

    This study investigated the morphology of graphene/graphene oxide film obtained by partial chemical reduction of graphite oxide (OG) as well as its resistance to solvents. Films of graphene/graphene oxide are great candidates for replacement of indium oxide doped with tin (ITO) in photoelectric devices. The OG was obtained from natural graphite, by Hummer's method modified, and its reduction is made by using sodium borohydride. Infrared spectroscopy analysis of Fourier transform (FTIR), Xray diffraction (XRD) and scanning electron microscopy, high-resolution (SEM/FEG) for the characterization of graphene/graphene oxide film obtained were performed. This film proved to be resilient, not dispersing in any of the various tested solvents (such as ethanol, acetone and THF), even under tip sonication, this resistance being an important property for the applications. Furthermore, the film had a morphology similar to that obtained by other preparation methods.(author)

  9. Synthesis and electrical characterization of Graphene Oxide films

    International Nuclear Information System (INIS)

    Yasin, Muhammad; Tauqeer, T.; Zaidi, Syed M.H.; San, Sait E.; Mahmood, Asad; Köse, Muhammet E.; Canimkurbey, Betul; Okutan, Mustafa

    2015-01-01

    In this work, we have synthesized Graphene Oxide (GO) using modified Hummers method and investigated its electrical properties using parallel plate impedance spectroscopic technique. Graphene Oxide films were prepared using drop casting method on Indium Tin Oxide (ITO) coated glass substrate. Atomic force microscopy was used to characterize the films' microstructure and surface topography. Electrical characterization was carried out using LCR meter in frequency regime (100 Hz to 10 MHz) at different temperatures. AC conductivity σ ac of the films was observed to be varied with angular frequency, ω as ω S , with S < 1. The electrical properties of GO were found to be both frequency and temperature dependent. Analysis showed that GO film contains direct current (DC) and Correlated Barrier Hopping (CBH) conductivity mechanisms at low and high frequency ranges, respectively. Photon absorption and transmittance capability in the visible range and excellent electrical parameters of solution processed Graphene Oxide suggest its suitability for the realization of low cost flexible organic solar cells and organic Thin Film Transistors, respectively. - Highlights: • Synthesize and electrical characterization of Graphene Oxide (GO) Film was undertaken. • Temperature dependent impedance spectroscopy was used for electrical analysis. • AFM was used to characterize films' microstructure and surface topography. • Electrical parameters were found to vary with both temperature and frequency. • GO showed DC and CBH conductivity mechanisms at low and high frequency, respectively

  10. Synthesis and characterization of nanoporous anodic oxide film on aluminum in H3PO4 + KMnO4 electrolyte mixture at different anodization conditions

    Science.gov (United States)

    Verma, Naveen; Jindal, Jitender; Singh, Krishan Chander; Mari, Bernabe

    2016-04-01

    The micro structural properties of nanoporous anodic oxide film formed in H3PO4 were highly influenced by addition of a low concentration of KMnO4 (0.0005 M) in 1 M H3PO4 solution. The KMnO4 as additive enhanced the growth rate of oxide film formation as well as thickness of pore walls. Furthermore the growth rate was found increased with increase in applied current density. The increase in temperature and lack of stirring during anodization causes the thinness of pore wall which leads to increase in pore volume. With the decrease in concentration of H3PO4 in anodizing electrolyte from 1M to 0.3 M, keeping all other conditions constant, the decrease in porosity was observed. This might be due to the dissolution of aluminium oxide film in highly concentrated acidic solution.

  11. Growth Mechanism of γ-MnS Nanorod-Arrays by Hydrothermal Method on Anodic Aluminum Oxide Template

    International Nuclear Information System (INIS)

    Huang, Jianming; Liu, Weifeng; Lv, Yong; Yao, Lianzeng

    2010-01-01

    Hydrothermal method is a general, low-cost and convenience method which was utilized for synthesis of nanomaterials. Our research group has reported that oriented MnS nanorods on anodic aluminum oxide template were synthesized under a hydrothermal condition and demonstrated the effect of precursor content on the morphology evolution of as-samples. In order to research the growth mechanism of the arrays, herein we synthesized MnS nanorod arrays by combination of anodic aluminum oxide template and hydrothermal method on different substrates. Through-hole anodic aluminum oxide templates were prepared using Al foil (99.999%) via a two-step anodization process as described in literature. To investigate the effect of different substrates on the morphology of the-products, different substrates including anodic aluminum oxide template (sample A), one-step anodization Al foil (sample B, which was prepared by first anodizing Al foil for 10h and then removing the alumina layer with the mixed acid (0.6 M H 3 PO 4 and 0.15 M H 2 CrO 4 ), where the foil still kept the close-packed concave nano-pits consistently with the nanopole of anodic aluminum oxide template), Al foil (sample C, dipped in HNO 3 solution and covered by a compact alumina layer), Si wafer (sample D) respectively were put into Teflon-lined stainless steel autoclaves of 20 mL capacity filled with 16 mL mixed solution consisting of 2 mol/L MnCl 4 and 2 mol/L thiourea. We kept the reaction at 150 .deg. C for 20 h. When reactions completed the products were washed three times with distilled water and absolute ethanol, respectively. Then the products were dried in an oven at 60 .deg. C

  12. Growth Mechanism of γ-MnS Nanorod-Arrays by Hydrothermal Method on Anodic Aluminum Oxide Template

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Jianming; Liu, Weifeng; Lv, Yong; Yao, Lianzeng [Chinese Academy of Science, Hefei, Anhui (China)

    2010-09-15

    Hydrothermal method is a general, low-cost and convenience method which was utilized for synthesis of nanomaterials. Our research group has reported that oriented MnS nanorods on anodic aluminum oxide template were synthesized under a hydrothermal condition and demonstrated the effect of precursor content on the morphology evolution of as-samples. In order to research the growth mechanism of the arrays, herein we synthesized MnS nanorod arrays by combination of anodic aluminum oxide template and hydrothermal method on different substrates. Through-hole anodic aluminum oxide templates were prepared using Al foil (99.999%) via a two-step anodization process as described in literature. To investigate the effect of different substrates on the morphology of the-products, different substrates including anodic aluminum oxide template (sample A), one-step anodization Al foil (sample B, which was prepared by first anodizing Al foil for 10h and then removing the alumina layer with the mixed acid (0.6 M H{sub 3}PO{sub 4} and 0.15 M H{sub 2}CrO{sub 4}), where the foil still kept the close-packed concave nano-pits consistently with the nanopole of anodic aluminum oxide template), Al foil (sample C, dipped in HNO{sub 3} solution and covered by a compact alumina layer), Si wafer (sample D) respectively were put into Teflon-lined stainless steel autoclaves of 20 mL capacity filled with 16 mL mixed solution consisting of 2 mol/L MnCl{sub 4} and 2 mol/L thiourea. We kept the reaction at 150 .deg. C for 20 h. When reactions completed the products were washed three times with distilled water and absolute ethanol, respectively. Then the products were dried in an oven at 60 .deg. C.

  13. Low oxidation state aluminum-containing cluster anions: Cp{sup ∗}Al{sub n}H{sup −}, n = 1–3

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xinxing; Ganteför, Gerd; Bowen, Kit, E-mail: AKandalam@wcupa.edu, E-mail: kbowen@jhu.edu [Department of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Eichhorn, Bryan [Department of Chemistry, University of Maryland, College Park, Maryland 20742 (United States); Mayo, Dennis [EOD Technology Division, Naval Surface Warfare Center, Indian Head, Maryland 20640 (United States); Sawyer, William H.; Gill, Ann F.; Kandalam, Anil K., E-mail: AKandalam@wcupa.edu, E-mail: kbowen@jhu.edu [Department of Physics, West Chester University of PA, West Chester, Pennsylvania 19383 (United States); Schnöckel, Hansgeorg [Institute of Inorganic Chemistry, Karlsruhe Institute of Technology, D-76131 Karlsruhe (Germany)

    2016-08-21

    Three new, low oxidation state, aluminum-containing cluster anions, Cp*Al{sub n}H{sup −}, n = 1–3, were prepared via reactions between aluminum hydride cluster anions, Al{sub n}H{sub m}{sup −}, and Cp*H ligands. These were characterized by mass spectrometry, anion photoelectron spectroscopy, and density functional theory based calculations. Agreement between the experimentally and theoretically determined vertical detachment energies and adiabatic detachment energies validated the computed geometrical structures. Reactions between aluminum hydride cluster anions and ligands provide a new avenue for discovering low oxidation state, ligated aluminum clusters.

  14. AZO Thin Films by Sol-Gel Process for Integrated Optics

    Directory of Open Access Journals (Sweden)

    Azzedine Boudrioua

    2013-07-01

    Full Text Available Undoped and aluminum-doped zinc oxide (AZO thin films are prepared by the sol-gel process. Zinc acetate dihydrate, ethanol, and monoethanolamine are used as precursor, solvent, and stabilizer, respectively. In the case of AZO, aluminum nitrate nonahydrate is added to the precursor solution with an atomic percentage equal to 1 and 2 at.% Al. The multi thin layers are deposited by spin-coating onto glass substrates, and are transformed into ZnO upon annealing at 550 °C. Films display a strong preferential orientation, with high values for the Texture Coefficients (TC of the (002 direction (TC(002 ≈ 3. The structural, morphological, and optical properties of the thin films as a function of aluminum content have been investigated using X-Ray Diffraction (XRD, Atomic Force Microscopy (AFM, and Scanning Electronic Microscopy (SEM. Waveguiding properties of the thin films have been also studied using m-lines spectroscopy. The results indicate that the films are monomodes at 632.8 nm with optical propagation optical losses estimated around 1.6 decibel per cm (dB/cm.

  15. Preparation of mesoporous alumina films by anodization: Effect of pretreatments on the aluminum surface and MTBE catalytic oxidation

    International Nuclear Information System (INIS)

    Vazquez, A.L.; Carrera, R.; Arce, E.; Castillo, N.; Castillo, S.; Moran-Pineda, M.

    2009-01-01

    Mesoporous materials are both scientifically and technologically important because of the presence of voids of controllable dimensions at atomic, molecular, and nanometric scales. Over the last decade, there has been both an increasing interest and research effort in the synthesis and characterization of these types of materials. The purposes of this work are to study the physical and chemical changes in the properties of mesoporous alumina films produced by anodization in sulphuric acid by different pretreatments on the aluminium surface such as mechanical polishing [MP] and electropolishing [EP]; and to compare their properties such as morphology, structure and catalytic activity with those present in commercial alumina. The morphologic and physical characterizations of the alumina film samples were carried out by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The chemical evaluations were performed by the oxidation of methyl-tert-butyl-ether (MTBE) at 400 deg. C under O 2 /He oxidizing conditions (Praxair, 2.0% O 2 /He balance). According to the results, the samples that presented higher activities than those in Al 2 O 3 /Al [MP] and commercial alumina in the MTBE oxidation (69%), were those prepared by Al 2 O 3 /Al [EP]. The average mesoporous diameter was 17 nm, and the morphological shape was equiaxial; thus, that pore distribution was the smallest of all with a homogeneous distribution.

  16. Preparation of mesoporous alumina films by anodization: Effect of pretreatments on the aluminum surface and MTBE catalytic oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Vazquez, A.L., E-mail: avazquezd@ipn.m [Departamento de Ingenieria Metalurgica, ESIQIE-IPN, AP 75-876, Mexico, D.F. (Mexico); Programa de Ingenieria Molecular, Instituto Mexicano del Petroleo, Eje Lazaro Cardenas 152, C.P. 07730, Mexico, D.F. (Mexico); Carrera, R. [Departamento de Ingenieria Metalurgica, ESIQIE-IPN, AP 75-876, Mexico, D.F. (Mexico); Programa de Ingenieria Molecular, Instituto Mexicano del Petroleo, Eje Lazaro Cardenas 152, C.P. 07730, Mexico, D.F. (Mexico); Arce, E. [Departamento de Ingenieria Metalurgica, ESIQIE-IPN, AP 75-876, Mexico, D.F. (Mexico); Castillo, N. [CINVESTAV, Departamento de Fisica. Av. IPN 2508, 07360, Mexico, D.F (Mexico); Castillo, S. [Departamento de Ingenieria Metalurgica, ESIQIE-IPN, AP 75-876, Mexico, D.F. (Mexico); Programa de Ingenieria Molecular, Instituto Mexicano del Petroleo, Eje Lazaro Cardenas 152, C.P. 07730, Mexico, D.F. (Mexico); Moran-Pineda, M. [Programa de Ingenieria Molecular, Instituto Mexicano del Petroleo, Eje Lazaro Cardenas 152, C.P. 07730, Mexico, D.F. (Mexico)

    2009-08-26

    Mesoporous materials are both scientifically and technologically important because of the presence of voids of controllable dimensions at atomic, molecular, and nanometric scales. Over the last decade, there has been both an increasing interest and research effort in the synthesis and characterization of these types of materials. The purposes of this work are to study the physical and chemical changes in the properties of mesoporous alumina films produced by anodization in sulphuric acid by different pretreatments on the aluminium surface such as mechanical polishing [MP] and electropolishing [EP]; and to compare their properties such as morphology, structure and catalytic activity with those present in commercial alumina. The morphologic and physical characterizations of the alumina film samples were carried out by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The chemical evaluations were performed by the oxidation of methyl-tert-butyl-ether (MTBE) at 400 deg. C under O{sub 2}/He oxidizing conditions (Praxair, 2.0% O{sub 2}/He balance). According to the results, the samples that presented higher activities than those in Al{sub 2}O{sub 3}/Al [MP] and commercial alumina in the MTBE oxidation (69%), were those prepared by Al{sub 2}O{sub 3}/Al [EP]. The average mesoporous diameter was 17 nm, and the morphological shape was equiaxial; thus, that pore distribution was the smallest of all with a homogeneous distribution.

  17. Combustion synthesized indium-tin-oxide (ITO) thin film for source/drain electrodes in all solution-processed oxide thin-film transistors

    International Nuclear Information System (INIS)

    Tue, Phan Trong; Inoue, Satoshi; Takamura, Yuzuru; Shimoda, Tatsuya

    2016-01-01

    We report combustion solution synthesized (SCS) indium-tin-oxide (ITO) thin film, which is a well-known transparent conductive oxide, for source/drain (S/D) electrodes in solution-processed amorphous zirconium-indium-zinc-oxide TFT. A redox-based combustion synthetic approach is applied to ITO thin film using acetylacetone as a fuel and metal nitrate as oxidizer. The structural and electrical properties of SCS-ITO precursor solution and thin films were systematically investigated with changes in tin concentration, indium metal precursors, and annealing conditions such as temperature, time, and ambient. It was found that at optimal conditions the SCS-ITO thin film exhibited high crystalline quality, atomically smooth surface (RMS ∝ 4.1 Aa), and low electrical resistivity (4.2 x 10 -4 Ω cm). The TFT using SCS-ITO film as the S/D electrodes showed excellent electrical properties with negligible hysteresis. The obtained ''on/off'' current ratio, subthreshold swing factor, subthreshold voltage, and field-effect mobility were 5 x 10 7 , 0.43 V/decade, 0.7 V, and 2.1 cm 2 /V s, respectively. The performance and stability of the SCS-ITO TFT are comparable to those of the sputtered-ITO TFT, emphasizing that the SCS-ITO film is a promising candidate for totally solution-processed oxide TFTs. (orig.)

  18. Porous aluminum room temperature anodizing process in a fluorinated-oxalic acid solution

    Science.gov (United States)

    Dhahri, S.; Fazio, E.; Barreca, F.; Neri, F.; Ezzaouia, H.

    2016-08-01

    Anodizing of aluminum is used for producing porous insulating films suitable for different applications in electronics and microelectronics. Porous-type aluminum films are most simply realized by galvanostatic anodizing in aqueous acidic solutions. The improvement in application of anodizing technique is associated with a substantial reduction of the anodizing voltage at appropriate current densities as well as to the possibility to carry out the synthesis process at room temperature in order to obtain a self-planarizing dielectric material incorporated in array of super-narrow metal lines. In this work, the anodizing of aluminum to obtain porous oxide was carried out, at room temperature, on three different substrates (glass, stainless steel and aluminum), using an oxalic acid-based electrolyte with the addition of a relatively low amount of 0.4 % of HF. Different surface morphologies, from nearly spherical to larger porous nanostructures with smooth edges, were observed by means of scanning electron microscopy. These evidences are explained by considering the formation, transport and adsorption of the fluorine species which react with the Al3+ ions. The behavior is also influenced by the nature of the original substrate.

  19. Controlling the resistivity gradient in chemical vapor deposition-deposited aluminum-doped zinc oxide

    NARCIS (Netherlands)

    Ponomarev, M. V.; Verheijen, M. A.; Keuning, W.; M. C. M. van de Sanden,; Creatore, M.

    2012-01-01

    Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO: Al layers by focusing on the control

  20. Thermal oxidation of Ni films for p-type thin-film transistors

    KAUST Repository

    Jiang, Jie; Wang, Xinghui; Zhang, Qing; Li, Jingqi; Zhang, Xixiang

    2013-01-01

    p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.

  1. Influence of various thickness metallic interlayers on opto-electric and mechanical properties of AZO thin films on PET substrates

    Science.gov (United States)

    Chang, R. C.; Li, T. C.; Lin, C. W.

    2012-02-01

    Various thickness metallic interlayers to improve the opto-electric and mechanical properties of aluminum-doped zinc oxide (AZO) thin films deposited on flexible polyethylene terephtalate (PET) substrates are studied. The effects of the interlayers on the resistance and transmittance of the AZO thin films are discussed. The result shows that the metallic interlayers effectively improve the electric resistance but reduce the optical transmittance of the AZO thin films. These phenomena become more obvious as the interlayer thickness increases. However, the AZO with an aluminum interlayer still behaves an acceptable transmittance. Moreover, mechanical tests indicate that the aluminum interlayer increases the hardness and modulus, and reduce the residual stress of the AZO thin films. In contrast, the silver and copper interlayers decrease the AZO's mechanical properties. Comparing to those without any interlayer, the results show that the best interlayer is the 6 nm thick aluminum film.

  2. Mn-implanted, polycrystalline indium tin oxide and indium oxide films

    International Nuclear Information System (INIS)

    Scarlat, Camelia; Vinnichenko, Mykola; Xu Qingyu; Buerger, Danilo; Zhou Shengqiang; Kolitsch, Andreas; Grenzer, Joerg; Helm, Manfred; Schmidt, Heidemarie

    2009-01-01

    Polycrystalline conducting, ca. 250 nm thick indium tin oxide (ITO) and indium oxide (IO) films grown on SiO 2 /Si substrates using reactive magnetron sputtering, have been implanted with 1 and 5 at.% of Mn, followed by annealing in nitrogen or in vacuum. The effect of the post-growth treatment on the structural, electrical, magnetic, and optical properties has been studied. The roughness of implanted films ranges between 3 and 15 nm and XRD measurements revealed a polycrystalline structure. A positive MR has been observed for Mn-implanted and post-annealed ITO and IO films. It has been interpreted by considering s-d exchange. Spectroscopic ellipsometry has been used to prove the existence of midgap electronic states in the Mn-implanted ITO and IO films reducing the transmittance below 80%.

  3. Influence of aluminum nitride interlayers on crystal orientation and piezoelectric property of aluminum nitride thin films prepared on titanium electrodes

    International Nuclear Information System (INIS)

    Kamohara, Toshihiro; Akiyama, Morito; Ueno, Naohiro; Nonaka, Kazuhiro; Kuwano, Noriyuki

    2007-01-01

    Highly c-axis-oriented aluminum nitride (AlN) thin films have been prepared on titanium (Ti) bottom electrodes by using AlN interlayers. The AlN interlayers were deposited between Ti electrodes and silicon (Si) substrates, such as AlN/Ti/AlN/Si. The crystallinity and crystal orientation of the AlN films and Ti electrodes strongly depended on the thickness of the AlN interlayers. Although the sputtering conditions were the same, the X-ray diffraction intensity of AlN (0002) and Ti (0002) planes drastically increased, and the full-width at half-maximum (FWHM) of the X-ray rocking curves decreased from 5.1 o to 2.6 o and from 3.3 o to 2.0 o , respectively. Furthermore, the piezoelectric constant d 33 of the AlN films was significantly improved from - 0.2 to - 4.5 pC/N

  4. Nuclear microanalysis of oxide films on structural steel

    International Nuclear Information System (INIS)

    Istomin, I.V.; Karabash, V.A.; Maisyukov, V.D.; Sosnin, A.N.; Shorin, V.S.

    1989-01-01

    Studies of the behavior of structural materials in nuclear power plants have indicated the important role of oxide films on metals, especially metals of the iron group. The films may be formed as a result of the corrosion of the metal in an aggressive coolant. At the same time, some oxide films have anticorrosive properties and can be produced specially by the introduction of inhibitor-passivators, e.g., molecular oxygen, into the aggressive medium. Experimental data on the film growth rate make it possible to determine the kinetics of the oxidation process, the nature of the diffusion of the main components through the film, and the role of the phase transitions (crystal-chemical transformations) and point defects during the migration of oxygen and metal ions through the oxide. In this study nuclear microanalysis is used to measure the parameters of oxide films formed on 10Cr2Mo and 1Cr18Ni10Ti steels in steam in the temperature range 320-620C. In this method the film parameters in the general analysis of the energy spectra of deuterons back-scattered from iron nuclei and protons in the case of the 16 O(d,p 1 ) 17 O nuclear reaction. With this approach and an initial deuteron energy E o = 0.9 MeV the range of the measurable thickness t of the films is 0.001-1.5 mg/cm 2 . The data obtained not only confirm the high sensitivity of the nuclear microanalysis method but also demonstrate that it can be used for nondestructive quality control of the surface

  5. Films based on oxidized starch and cellulose from barley.

    Science.gov (United States)

    El Halal, Shanise Lisie Mello; Colussi, Rosana; Deon, Vinícius Gonçalves; Pinto, Vânia Zanella; Villanova, Franciene Almeida; Carreño, Neftali Lenin Villarreal; Dias, Alvaro Renato Guerra; Zavareze, Elessandra da Rosa

    2015-11-20

    Starch and cellulose fibers were isolated from grains and the husk from barley, respectively. Biodegradable films of native starch or oxidized starches and glycerol with different concentrations of cellulose fibers (0%, 10% and 20%) were prepared. The films were characterized by morphological, mechanical, barrier, and thermal properties. Cellulose fibers isolated from the barley husk were obtained with 75% purity and high crystallinity. The morphology of the films of the oxidized starches, regardless of the fiber addition, was more homogeneous as compared to the film of the native starch. The addition of cellulose fibers in the films increased the tensile strength and decreased elongation. The water vapor permeability of the film of oxidized starch with 20% of cellulose fibers was lower than the without fibers. However the films with cellulose fibers had the highest decomposition with the initial temperature and thermal stability. The oxidized starch and cellulose fibers from barley have a good potential for use in packaging. The addition of cellulose fibers in starch films can contribute to the development of films more resistant that can be applied in food systems to maintain its integrity. Copyright © 2015 Elsevier Ltd. All rights reserved.

  6. Monodispersed macroporous architecture of nickel-oxide film as an anode material for thin-film lithium-ion batteries

    International Nuclear Information System (INIS)

    Wu, Mao-Sung; Lin, Ya-Ping

    2011-01-01

    A nickel-oxide film with monodispersed open macropores was prepared on a stainless-steel substrate by electrophoretic deposition of a polystyrene-sphere monolayer followed by anodic electrodeposition of nickel oxy-hydroxide. The deposited films convert to cubic nickel oxide after annealing at 400 o C for 1 h. Galvanostatic charge and discharge results indicate that the nickel-oxide film with monodispersed open macropores is capable of delivering a higher capacity than the bare nickel-oxide film, especially in high-rate charge and discharge processes. The lithiation capacity of macroporous nickel oxide reaches 1620 mA h g -1 at 1 C current discharge and decreases to 990 mA h g -1 at 15 C current discharge. The presence of monodispersed open macropores in the nickel-oxide film might facilitate the electrolyte penetration, diffusion, and migration. Electrochemical reactions between nickel oxide and lithium ions are therefore markedly improved by this tailored film architecture.

  7. Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Puttaswamy, Manjunath; Vehkamäki, Marko [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Kukli, Kaupo, E-mail: kaupo.kukli@helsinki.fi [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); University of Tartu, Institute of Physics, W. Ostwald 1, EE-50411 Tartu (Estonia); Dimri, Mukesh Chandra [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Kemell, Marianna; Hatanpää, Timo; Heikkilä, Mikko J. [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Mizohata, Kenichiro [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 Helsinki (Finland); Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Ritala, Mikko; Leskelä, Markku [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland)

    2016-07-29

    Bismuth iron oxide films with varying contributions from Fe{sub 2}O{sub 3} or Bi{sub 2}O{sub 3} were prepared using atomic layer deposition. Bismuth (III) 2,3-dimethyl-2-butoxide, was used as the bismuth source, iron(III) tert-butoxide as the iron source and water vapor as the oxygen source. The films were deposited as stacks of alternate Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} layers. Films grown at 140 °C to the thickness of 200–220 nm were amorphous, but crystallized upon post-deposition annealing at 500 °C in nitrogen. Annealing of films with intermittent bismuth and iron oxide layers grown to different thicknesses influenced their surface morphology, crystal structure, composition, electrical and magnetic properties. Implications of multiferroic performance were recognized in the films with the remanent charge polarization varying from 1 to 5 μC/cm{sup 2} and magnetic coercivity varying from a few up to 8000 A/m. - Highlights: • Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C. • The major phase formed in the films upon annealing at 500 °C was BiFeO{sub 3}. • BiFeO{sub 3} films and films containing excess Bi favored electrical charge polarization. • Slight excess of iron oxide enhanced saturative magnetization behavior.

  8. Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

    Directory of Open Access Journals (Sweden)

    Chun Zhao

    2014-10-01

    Full Text Available Oxide materials with large dielectric constants (so-called high-k dielectrics have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs. A novel characterization (pulse capacitance-voltage method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k dielectrics based on the Metal Oxide Semiconductor (MOS capacitor structure. The variation of flat-band voltages of the MOS structure was observed and discussed accordingly. Some interesting trapping/detrapping results related to the lanthanide aluminum oxide traps were identified for possible application in Flash memory technology. After understanding the trapping/detrapping mechanism of the high-k oxides, a solid foundation was prepared for further exploration into charge-trapping non-volatile memory in the future.

  9. Preparation of molybdenum oxide thin films by MOCVD

    International Nuclear Information System (INIS)

    Guerrero, R. Martinez; Garcia, J.R. Vargas; Santes, V.; Gomez, E.

    2007-01-01

    In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 o C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 o C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of α-MoO 3 phase at deposition temperatures ranging from 400 to 560 o C (673-833 K). Crystalline α-MoO 3 films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 o C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance

  10. Preparation of molybdenum oxide thin films by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Guerrero, R. Martinez [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico); Garcia, J.R. Vargas [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico)]. E-mail: rvargasga@ipn.mx; Santes, V. [CIIEMAD-IPN, Miguel Othon de Mendizabal 485, Mexico 07700, D.F. (Mexico); Gomez, E. [Instituto de Quimica-UNAM, Circuito Exterior-Ciudad Universitaria, Mexico 04510, D.F. (Mexico)

    2007-05-31

    In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 {sup o}C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 {sup o}C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of {alpha}-MoO{sub 3} phase at deposition temperatures ranging from 400 to 560 {sup o}C (673-833 K). Crystalline {alpha}-MoO{sub 3} films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 {sup o}C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance.

  11. Effect of Al2O3 insulator thickness on the structural integrity of amorphous indium-gallium-zinc-oxide based thin film transistors.

    Science.gov (United States)

    Kim, Hak-Jun; Hwang, In-Ju; Kim, Youn-Jea

    2014-12-01

    The current transparent oxide semiconductors (TOSs) technology provides flexibility and high performance. In this study, multi-stack nano-layers of TOSs were designed for three-dimensional analysis of amorphous indium-gallium-zinc-oxide (a-IGZO) based thin film transistors (TFTs). In particular, the effects of torsional and compressive stresses on the nano-sized active layers such as the a-IGZO layer were investigated. Numerical simulations were carried out to investigate the structural integrity of a-IGZO based TFTs with three different thicknesses of the aluminum oxide (Al2O3) insulator (δ = 10, 20, and 30 nm), respectively, using a commercial code, COMSOL Multiphysics. The results are graphically depicted for operating conditions.

  12. Preliminary comparison of three processes of AlN oxidation: dry, wet and mixed ones

    Directory of Open Access Journals (Sweden)

    Korbutowicz R.

    2016-03-01

    Full Text Available Three methods of AlN layers oxidation: dry, wet and mixed (wet with oxygen were compared. Some physical parameters of oxidized thin films of aluminum nitride (AlN layers grown on silicon Si(1 1 1 were investigated by means Energy-Dispersive X-ray Spectroscopy (EDS and Spectroscopic Ellipsometry (SE. Three series of the thermal oxidations processes were carried out at 1012 °C in pure nitrogen as carrying gas and various gas ambients: (a dry oxidation with oxygen, (b wet oxidation with water steam and (c mixed atmosphere with various process times. All the research methods have shown that along with the rising of the oxidation time, AlN layer across the aluminum oxide nitride transforms to aluminum oxide. The mixed oxidation was a faster method than the dry or wet ones.

  13. Photoconductivity of oxidized nanostructured PbTe(In) films

    International Nuclear Information System (INIS)

    Dobrovolsky, A A; Ryabova, L I; Khokhlov, D R; Dashevsky, Z M; Kasiyan, V A

    2009-01-01

    Photoconductivity of as-grown and oxidized nanocrystalline PbTe(In) films has been studied in the dc and ac modes at temperatures 4.2–300 K. The electric transport in the films is defined by two mechanisms: conductivity through barriers at grain boundaries and transport along inversion channels at the grain surface. Modification of the transport mechanisms induced by oxidation is considered. Relatively weak oxidation results in an increase in the contribution of grain barriers to conductivity followed by an enhancement of the photoconductivity amplitude. Instead, this contribution drops in the case of deep oxidation resulting in a photoresponse reduction. It is shown that the main mechanism of charge transport in deeply oxidized films at low temperatures is hopping along inversion channels at the grain surface. It is demonstrated that the photoconductive response of nanocrystalline materials may be optimized by variation of the oxidation level, measurement frequency and temperature

  14. Atomic layer deposition and etching methods for far ultraviolet aluminum mirrors

    Science.gov (United States)

    Hennessy, John; Moore, Christopher S.; Balasubramanian, Kunjithapatham; Jewell, April D.; Carter, Christian; France, Kevin; Nikzad, Shouleh

    2017-09-01

    High-performance aluminum mirrors at far ultraviolet wavelengths require transparent dielectric materials as protective coatings to prevent oxidation. Reducing the thickness of this protective layer can result in additional performance gains by minimizing absorption losses, and provides a path toward high Al reflectance in the challenging wavelength range of 90 to 110 nm. We have pursued the development of new atomic layer deposition processes (ALD) for the metal fluoride materials of MgF2, AlF3 and LiF. Using anhydrous hydrogen fluoride as a reactant, these films can be deposited at the low temperatures required for large-area surface-finished optics and polymeric diffraction gratings. We also report on the development and application of an atomic layer etching (ALE) procedure to controllably etch native aluminum oxide. Our ALE process utilizes the same chemistry used in the ALD of AlF3 thin films, allowing for a combination of high-performance evaporated Al layers and ultrathin ALD encapsulation without requiring vacuum transfer. Progress in demonstrating the scalability of this approach, as well as the environmental stability of ALD/ALE Al mirrors are discussed in the context of possible future applications for NASA LUVOIR and HabEx mission concepts.

  15. Influence of defects on the ordering degree of nanopores made from anodic aluminum oxide

    International Nuclear Information System (INIS)

    Yu Wenhui; Fei Guangtao; Chen Xiaomeng; Xue Fanghong; Xu Xijin

    2006-01-01

    Anodic aluminum oxide (AAO) templates with highly ordered nanoporous structure were fabricated by means of the electrochemical anodization under the constant anodic voltage and electrolyte temperature. The dependence of the ordering degree of nanopores on the point defects, dislocation configuration and grain boundary of aluminum is qualitatively analyzed. Experiment results show that the size of the ordered region of nanopores depends strongly on the point defects, dislocation cell configuration

  16. Superhydrophobic honeycomb-like cobalt stearate thin films on aluminum with excellent anti-corrosion properties

    Science.gov (United States)

    Xiong, Jiawei; Sarkar, D. K.; Chen, X.-Grant

    2017-06-01

    Superhydrophobic cobalt stearate thin films with excellent anti-corrosion properties were successfully fabricated on aluminum substrates via electrodeposition process. The water-repellent properties were attributed to the honeycomb-like micro-nano structure as well as low surface energy of cobalt stearate. The correlation between the surface morphology, composition as well as wetting properties and the molar ratio of inorganic cobalt salt (Co(NO3)2) and organic stearic acid (SA) abbreviated as Co/SA, in the electrolyte were studied carefully. The optimum superhydrophobic surface obtained on the electrodeposited cathodic aluminum substrate, in the mixed ethanolic solution with Co/SA molar ratio of 0.2, was found to have a maximum contact angle of 161°. The polarization resistance of superhydrophobic aluminum substrates was calculated as high as 1591 kΩ cm2, which is determined to be two orders of magnitude larger than that of the as-received aluminum substrate as 27 kΩ cm2. Electrochemical impedance spectroscopy (EIS) was also employed to evaluate the corrosion resistance properties of these samples. Furthermore, electrical equivalent circuits (EEC) have been suggested in order to better understand the corrosion phenomena on these surfaces based on the corresponding EIS data.

  17. Chemically abrupt interface between Ce oxide and Fe films

    International Nuclear Information System (INIS)

    Lee, H.G.; Lee, D.; Kim, S.; Kim, S.G.; Hwang, Chanyong

    2005-01-01

    A chemically abrupt Fe/Ce oxide interface can be formed by initial oxidation of an Fe film followed by deposition of Ce metal. Once a Ce oxide layer is formed on top of Fe, it acts a passivation barrier for oxygen diffusion. Further deposition of Ce metal followed by its oxidation preserve the abrupt interface between Ce oxide and Fe films. The Fe and Ce oxidation states have been monitored at each stage using X-ray photoelectron spectroscopy

  18. Degradation of superconducting Nb/NbN films by atmospheric oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Henry, Michael David; Wolfley, Steven L.; Young, Travis Ryan; Monson, Todd; Pearce, Charles Joseph; Lewis, Rupert M.; Clark, Blythe; Brunke, Lyle Brent; Missert, Nancy A.

    2017-03-01

    Niobium and niobium nitride thin films are transitioning from fundamental research toward wafer scale manufacturing with technology drivers that include superconducting circuits and electronics, optical single photon detectors, logic, and memory. Successful microfabrication requires precise control over the properties of sputtered superconducting films, including oxidation. Previous work has demonstrated the mechanism in oxidation of Nb and how film structure could have deleterious effects upon the superconducting properties. This study provides an examination of atmospheric oxidation of NbN films. By examination of the room temperature sheet resistance of NbN bulk oxidation was identified and confirmed by secondary ion mass spectrometry. As a result, Meissner magnetic measurements confirmed the bulk oxidation not observed with simple cryogenic resistivity measurements.

  19. Interface strength and degradation of adhesively bonded porous aluminum oxides

    DEFF Research Database (Denmark)

    T. Abrahami, Shoshan; M. M. de Kok, John; Gudla, Visweswara Chakravarthy

    2017-01-01

    For more than six decades, chromic acid anodizing has been the main step in the surface treatment of aluminum for adhesivelybonded aircraft structures. Soon this process, known for producing a readily adherent oxide with an excellent corrosion resistance,will be banned by strict international....... The relationship between the anodizing conditions insulfuric and mixtures of sulfuric and phosphoric acid electrolytes and the formation and durability of bonding under variousenvironmental conditions was investigated. Scanning electron microscopy was used to characterize the oxide features. Selectedspecimens were...... studied with transmission electron microscopy coupled with energy-dispersive X-ray spectroscopy to measureresin concentration within structurally different porous anodic oxide layers as a function of depth. Results show that there are twocritical morphological aspects for strong and durable bonding. First...

  20. Electrical properties of aluminum-doped zinc oxide (AZO) nanoparticles synthesized by chemical vapor synthesis

    International Nuclear Information System (INIS)

    Hartner, Sonja; Schulz, Christof; Wiggers, Hartmut; Ali, Moazzam; Winterer, Markus

    2009-01-01

    Aluminum-doped zinc oxide nanoparticles have been prepared by chemical vapor synthesis, which facilitates the incorporation of a higher percentage of dopant atoms, far above the thermodynamic solubility limit of aluminum. The electrical properties of aluminum-doped and undoped zinc oxide nanoparticles were investigated by impedance spectroscopy. The impedance is measured under hydrogen and synthetic air between 323 and 673 K. The measurements under hydrogen as well as under synthetic air show transport properties depending on temperature and doping level. Under hydrogen atmosphere, a decreasing conductivity with increasing dopant content is observed, which can be explained by enhanced scattering processes due to an increasing disorder in the nanocrystalline material. The temperature coefficient for the doped samples switches from positive temperature coefficient behavior to negative temperature coefficient behavior with increasing dopant concentration. In the presence of synthetic air, the conductivity firstly increases with increasing dopant content by six orders of magnitude. The origin of the increasing conductivity is the generation of free charge carriers upon dopant incorporation. It reaches its maximum at a concentration of 7.7% of aluminum, and drops for higher doping levels. In all cases, the conductivity under hydrogen is higher than under synthetic air and can be changed reversibly by changing the atmosphere.

  1. Electrical properties of aluminum-doped zinc oxide (AZO) nanoparticles synthesized by chemical vapor synthesis.

    Science.gov (United States)

    Hartner, Sonja; Ali, Moazzam; Schulz, Christof; Winterer, Markus; Wiggers, Hartmut

    2009-11-04

    Aluminum-doped zinc oxide nanoparticles have been prepared by chemical vapor synthesis, which facilitates the incorporation of a higher percentage of dopant atoms, far above the thermodynamic solubility limit of aluminum. The electrical properties of aluminum-doped and undoped zinc oxide nanoparticles were investigated by impedance spectroscopy. The impedance is measured under hydrogen and synthetic air between 323 and 673 K. The measurements under hydrogen as well as under synthetic air show transport properties depending on temperature and doping level. Under hydrogen atmosphere, a decreasing conductivity with increasing dopant content is observed, which can be explained by enhanced scattering processes due to an increasing disorder in the nanocrystalline material. The temperature coefficient for the doped samples switches from positive temperature coefficient behavior to negative temperature coefficient behavior with increasing dopant concentration. In the presence of synthetic air, the conductivity firstly increases with increasing dopant content by six orders of magnitude. The origin of the increasing conductivity is the generation of free charge carriers upon dopant incorporation. It reaches its maximum at a concentration of 7.7% of aluminum, and drops for higher doping levels. In all cases, the conductivity under hydrogen is higher than under synthetic air and can be changed reversibly by changing the atmosphere.

  2. Electrically conductive anodized aluminum coatings

    Science.gov (United States)

    Alwitt, Robert S. (Inventor); Liu, Yanming (Inventor)

    2001-01-01

    A process for producing anodized aluminum with enhanced electrical conductivity, comprising anodic oxidation of aluminum alloy substrate, electrolytic deposition of a small amount of metal into the pores of the anodized aluminum, and electrolytic anodic deposition of an electrically conductive oxide, including manganese dioxide, into the pores containing the metal deposit; and the product produced by the process.

  3. Formation of oxide layers on aluminum, niobium, and tantalum in molten alkali metal carbonates

    Science.gov (United States)

    Nikitina, E. V.; Kazakovtseva, N. A.

    2013-08-01

    The electrochemical synthesis of niobium, tantalum, and aluminum oxide nanolayers is studied in the melt of lithium, sodium, and potassium carbonates with various additives to a salt phase in an oxidizing atmosphere at a temperature of 773 and 873 K. A scheme is proposed for high-temperature anion local activation of the process.

  4. Investigation of thermal conductivity and oxidation behaviour of reaction bonded aluminum nitride (RBAN) ceramics

    International Nuclear Information System (INIS)

    Salahi, E; Moztarzadeh, F.; Margoosian, V.; Heinrich, J. G.

    2003-01-01

    AlN samples have been produced by reaction bonding process using AlN and aluminum powders as starting materials. Different aluminum nitride and aluminum powders ratios were mixed in ethanol media, dried, isostatically and nitrided in (N 2 )atmosphere. Results showed that conversion of to AlN depends strongly on the amount of aluminum starting powder and decreased with increasing after a maximum at 25 Al wt %. Changing the particle size and morphology of the aluminum starting powder leads to change in the conversion ratio and microstructure of RBAN ceramics. Typical scanning electron micrographs of RBAN sample indicating primary and secondary aluminum nitride morphology and pore structure. The oxidation behavior of RABN samples showed the weight gain depends on the average particle size, morphology and amount of Al in starting mixture and pore structure. Samples have been manufactured with equi-axed morphology of Al starting powder have thermal conductivity higher than the samples have been manufactured with flake-like morphology. These differences were directly related to the different microstructure of RBAN samples

  5. Surface morphology study on chromium oxide growth on Cr films by Nd-YAG laser oxidation process

    International Nuclear Information System (INIS)

    Dong Qizhi; Hu Jiandong; Guo Zuoxing; Lian Jianshe; Chen Jiwei; Chen Bo

    2002-01-01

    Grain sized (60-100 nm) Cr 2 O 3 thin films were prepared on Cr thin film surfaces by Nd-YAG laser photothermal oxidation process. Surface morphology study showed crack-free short plateau-like oxide films formed. Increase of dislocation density after pulsed laser irradiation was found. Thin film external surfaces, grain boundaries and dislocations are main paths of laser surface oxidation. Pinning and sealing of grain boundary was the reason that deeper oxidation did not produce. Grain growth and agglomeration of Cr sub-layer yielded tensile stress on the surface Cr 2 O 3 thin film. It was the reason that short plateau-like surface morphology formed and cracks appeared sometimes. In oxygen annealing at 700 deg. C, grain boundaries were considered not to be pinned at the surface, mixture diffusion was main mechanism in growth of oxide. Compression stress development in whole film led to extrusion of grains that was the reason that multiple appearances such as pyramid-like and nutshell-like morphology formed

  6. Gelatin Template Synthesis of Aluminum Oxide and/or Silicon Oxide Containing Micro/Mesopores Using the Proteic Sol-Gel Method

    Directory of Open Access Journals (Sweden)

    Amanda Sayure Kasuya de Oliveira

    2017-01-01

    Full Text Available Aluminum oxide and/or silicon oxide-based supports were synthesized by proteic sol-gel method. The characterization was performed through the analysis of TG, XRD, FTIR, SEM, and N2 physisorption. The XRD diffractograms showed an amorphous material profile. TG results indicate the total liberation of the organic and inorganic material in the calcination temperature used, occurring in different mass loss range. This piece of information was reaffirmed by the FTIR spectra, which presented characteristic bands of gelatin structure before calcinations which disappear in the spectrum of the solid after calcinations, indicating the loss of organic matter from gelatin after heat treatment. The spectra exhibited M-O stretching vibration at low wavenumbers after calcinations related to metal oxides. The acquired images by SEM suggest the obtaining of a highly porous material with very different characteristics depending on the composition of the support. The N2 isotherms indicate the presence of a micro/mesoporous oxide with interesting textural properties, particularly for the supports containing aluminum and silicon oxide. The ethanol dehydration results showed greater selectivity to diethyl ether compared to ethylene. From the reaction data, the following order of acid strength was obtained: 2Si-Al > Si-2Al > Si-Al > Al, which is related to the Si-Al ratio.

  7. Raman and XPS characterization of vanadium oxide thin films with temperature

    Energy Technology Data Exchange (ETDEWEB)

    Ureña-Begara, Ferran, E-mail: ferran.urena@uclouvain.be [Université catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Louvain-la-Neuve (Belgium); Crunteanu, Aurelian [XLIM Research Institute, UMR 7252, CNRS/Université de Limoges, Limoges (France); Raskin, Jean-Pierre [Université catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Louvain-la-Neuve (Belgium)

    2017-05-01

    Highlights: • Comprehensive study of the oxidation of VO{sub 2} thin films from R.T. up to 550 °C. • Phase changes and mixed-valence vanadium oxides formed during the oxidation process. • Reported Raman and XPS signatures for each vanadium oxide. • Monitoring of the current and resistance evolution at the surface of the films. • Oxidation model describing the evolution of the vanadium oxides and phase changes. - Abstract: The oxidation mechanisms and the numerous phase transitions undergone by VO{sub 2} thin films deposited on SiO{sub 2}/Si and Al{sub 2}O{sub 3} substrates when heated from room temperature (R.T.) up to 550 °C in air are investigated by Raman and X-ray photoelectron spectroscopy. The results show that the films undergo several intermediate phase transitions between the initial VO{sub 2} monoclinic phase at R.T. and the final V{sub 2}O{sub 5} phase at 550 °C. The information about these intermediate phase transitions is scarce and their identification is important since they are often found during the synthesis of vanadium dioxide films. Significant changes in the film conductivity have also been observed to occur associated to the phase transitions. In this work, current and resistance measurements performed on the surface of the films are implemented in parallel with the Raman measurements to correlate the different phases with the conductivity of the films. A model to explain the oxidation mechanisms and phenomena occurring during the oxidation of the films is proposed. Peak frequencies, full-width half-maxima, binding energies and oxidation states from the Raman and X-ray photoelectron spectroscopy experiments are reported and analyzed for all the phases encountered in VO{sub 2} films prepared on SiO{sub 2}/Si and Al{sub 2}O{sub 3} substrates.

  8. Formation of self-assembled stripes on the anodic aluminum oxide

    International Nuclear Information System (INIS)

    Liu Hongwen; Guo Haiming; Wang Yeliang; Shen Chengmin; Yang Haitao; Wang Yutian; Wei Long

    2004-01-01

    Non-polished aluminum sheets were anodized and the coexistence of self-assembled stripes and porous arrays on the Al surface was observed. The nanostructures were investigated in details using an atomic force microscope. And the formation mechanism of the stripes was discussed and simulated using Brusselator model in this work. The authors demonstrated that the self-assembled patterns on the Al surface were governed by the competition of formation and dissolution of alumina film during the reaction process. Moreover, this type of ordered structure could only form in certain conditions

  9. Effects of micro arc oxidation on fatigue limits and fracture morphologies of 7475 high strength aluminum alloy

    Energy Technology Data Exchange (ETDEWEB)

    Dejun, Kong, E-mail: kong-dejun@163.com [College of Mechanical Engineering, Changzhou University, Changzhou, 213164 (China); Jiangsu Key Laboratory of Materials Surface Science and Technology, Changzhou University, Changzhou, 213164 (China); Hao, Liu; Jinchun, Wang [College of Mechanical Engineering, Changzhou University, Changzhou, 213164 (China)

    2015-11-25

    The oxide coatings with thicknesses of 8 μm, 10 μm, and 15 μm were prepared on 7475 aluminum alloy with micro arc oxidation (MAO) by controlling MAO time, the fatigue limits of original and MAO samples were contrastively measured by the Roccati method. The surface-interface morphologies, fracture morphologies, surface phases, and residual stresses of MAO coating were analyzed with a scanning electron microscopy (SEM), X-ray diffractometer (XRD) and XRD stress tester, respectively. The results show that fatigue limits of the MAO samples decreases as the coating thickness increasing. The fatigue limit of MAO sample with thickness of 8 μm, 10 μm, and 15 μm decreases by 6.48%, 8.33%, and 11.11%, respectively, compared with the original sample. The residual stress and defects introduced by MAO were the main factors of decreasing fatigue limits. - Graphical abstract: The fatigue limit of original sample was 216 MPa (a), while that of MAO samples with thickness of 8 μm, 10 μm and 15 μm was 202 MPa, 198 MPa and 192 MPa (b). The fatigue limit of MAO samples with thickness of 8 μm, 10 μm and 15 μm decreased by 6.48%, 8.33% and 11.11% compared with that of the original sample, as a result, the fatigue limit decreased with the MAO film thickness increasing. - Highlights: • The fatigue limits of MAO samples decrease with the oxide thickness increasing. • The overgrowth regions cause the crack source expanding. • The overgrowth of MAO film and tensile residual stress decrease fatigue limit.

  10. PLASMA POLYMER FILMS AS ADHESION PROMOTING PRIMERS FOR ALUMINUM. PART II: STRENGTH AND DURABILITY OF LAP JOINTS

    Science.gov (United States)

    Plasma polymerized hexamethyldisiloxane (HMDSO) films (~800 A in thickness) were deposited onto 6111-T4 aluminum substrates in radio frequency and microwave powered reactors and used as primers for structural adhesive bonding. Processing variables such as substrate pre-treatment,...

  11. Water clustering on nanostructured iron oxide films

    DEFF Research Database (Denmark)

    Merte, Lindsay Richard; Bechstein, Ralf; Peng, G.

    2014-01-01

    , but it is not well-understood how these hydroxyl groups and their distribution on a surface affect the molecular-scale structure at the interface. Here we report a study of water clustering on a moire-structured iron oxide thin film with a controlled density of hydroxyl groups. While large amorphous monolayer...... islands form on the bare film, the hydroxylated iron oxide film acts as a hydrophilic nanotemplate, causing the formation of a regular array of ice-like hexameric nanoclusters. The formation of this ordered phase is localized at the nanometre scale; with increasing water coverage, ordered and amorphous...

  12. Thick-film effects in the oxidation and hydriding of zirconium alloys

    International Nuclear Information System (INIS)

    Johnson, A.B. Jr.

    1989-08-01

    One of the fundamental discoveries involving radiation effects on the oxidation of Zircaloy in low-oxygen aqueous environments is the influence of thick oxide films. Zircaloy oxidation rates in low-oxygen (hydrogen-rich) coolants initially proceed at relatively low rates, often almost uninfluenced by radiation. Marked upturns in oxidation rate have signaled the onset of radiation effects. The radiation effects appear to correlate with a threshold oxide thickness. Results of the test reactor experiments lead to formulation of the Thick-Film Hypothesis: beyond a threshold oxide thickness, radiolysis of water that infiltrates oxide cracks and pores controls the oxidation rate; radiation creates microenvironments inside the oxide film, producing highly oxidizing conditions, that are no longer suppressed by the coolant-borne hydrogen. Upturns in oxidation rate on high-exposure Zircaloy pressure tubes add confirmatory evidence for the thick-film effect. This paper summarizes the early evidence for thick-film behavior, including oxidation and hydriding trends, updates confirmatory evidence from Zircaloy reactor and fuel assembly components, and highlights other observations from the test reactor series that have potential fundamental significance to explanations of radiation effects on Zircaloy. 23 refs., 10 figs

  13. Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor

    International Nuclear Information System (INIS)

    Kukli, Kaupo; Ritala, Mikko; Sajavaara, Timo; Haenninen, Timo; Leskelae, Markku

    2006-01-01

    Calcium oxide and calcium hafnium oxide thin films were grown by atomic layer deposition on borosilicate glass and silicon substrates in the temperature range of 205-300 o C. The calcium oxide films were grown from novel calcium cyclopentadienyl precursor and water. Calcium oxide films possessed refractive index 1.75-1.80. Calcium oxide films grown without Al 2 O 3 capping layer occurred hygroscopic and converted to Ca(OH) 2 after exposure to air. As-deposited CaO films were (200)-oriented. CaO covered with Al 2 O 3 capping layers contained relatively low amounts of hydrogen and re-oriented into (111) direction upon annealing at 900 o C. In order to examine the application of CaO in high-permittivity dielectric layers, mixtures of Ca and Hf oxides were grown by alternate CaO and HfO 2 growth cycles at 230 and 300 o C. HfCl 4 was used as a hafnium precursor. When grown at 230 o C, the films were amorphous with equal amounts of Ca and Hf constituents (15 at.%). These films crystallized upon annealing at 750 o C, showing X-ray diffraction peaks characteristic of hafnium-rich phases such as Ca 2 Hf 7 O 16 or Ca 6 Hf 19 O 44 . At 300 o C, the relative Ca content remained below 8 at.%. The crystallized phase well matched with rhombohedral Ca 2 Hf 7 O 16 . The dielectric films grown on Si(100) substrates possessed effective permittivity values in the range of 12.8-14.2

  14. Fabrication of high quality anodic aluminum oxide (AAO) on low purity aluminum—A comparative study with the AAO produced on high purity aluminum

    International Nuclear Information System (INIS)

    Michalska-Domańska, Marta; Norek, Małgorzata; Stępniowski, Wojciech J.; Budner, Bogusław

    2013-01-01

    Highlights: • Nanoporous alumina was fabricated by anodization in sulfuric acid solution with glycol. • The AAO manufacturing on low- and high-purity Al was compared. • The pores size was ranging between 30 and 50 nm. • No difference in the quality of the AAO fabricated on both Al types was observed. • The current vs. anodization time curves were recorded. -- Abstract: In this work the quality, arrangement, composition, and regularity of nanoporous AAO formed on the low-purity (AA1050) and high-purity aluminum during two-step anodization in a mixture of sulfuric acid solution (0.3 M), water and glycol (3:2, v/v), at various voltages (15, 20, 25, 30, 35 V) and at temperature of −1 °C, are investigated. The electrochemical conditions have allowed to obtain pores with the size ranging from 30 to 50 nm, which are much larger than those usually obtained by anodization in a pure sulfuric acid solution (<20 nm). The mechanism of the AAO growth is discussed. It was found that with the increase of applied anodizing voltage a number of incorporated sulfate ions in the aluminum oxide matrix increases, which was connected with the appearance of an unusual area in the current vs. time curves. On the surface of anodizing low- and high-purity aluminum, the formation of hillocks was observed, which was associated with the sulfate ions incorporation. The sulfate ions are replacing the oxygen atom/atoms in the AAO amorphous crystal structure and, consequently, the AAO template swells, the oxide cracks and uplifts causing the formation of hillocks. The same mechanism occurs for both low- and high-purity aluminum. Nanoporous AAO characterized by a very high regularity, not registered previously for low purity aluminum, was obtained. Furthermore, no significant difference in the regularity ratio between the AAO obtained on low- and high-purity aluminum, was observed. The electrochemical conditions applied in this study can be, thus, used for the fabrication of high quality

  15. Electrical properties of AlN{sub x}O{sub y} thin films prepared by reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Borges, J., E-mail: joelborges@fisica.uminho.pt [Centro de Fisica, Universidade do Minho, 4710-057 Braga (Portugal); Martin, N. [Institut FEMTO-ST, Departement MN2S, UMR 6174 (CNRS, UFC, ENSMM, UTBM) 32, Avenue de l' Observatoire 25044 BESANCON Cedex (France); Barradas, N.P.; Alves, E. [Instituto Superior Tecnico, Instituto Tecnologico Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Eyidi, D.; Beaufort, M.F.; Riviere, J.P. [Institut PPRIME, UPR 3346 CNRS-Universite de Poitiers-ENSMA, Departement de Physique et Mecanique des Materiaux, BP 30179 86962 Chasseneuil-Futuroscope Cedex (France); Vaz, F.; Marques, L. [Centro de Fisica, Universidade do Minho, 4710-057 Braga (Portugal)

    2012-08-31

    Direct current magnetron sputtering was used to produce AlN{sub x}O{sub y} thin films, using an aluminum target, argon and a mixture of N{sub 2} + O{sub 2} (17:3) as reactive gases. The partial pressure of the reactive gas mixture was increased, maintaining the discharge current constant. Within the two identified regimes of the target (metallic and compound), four different tendencies for the deposition rate were found and a morphological evolution from columnar towards cauliflower-type, ending up as dense and featureless-type films. The structure was found to be Al-type (face centered cubic) and the structural characterization carried out by X-ray diffraction and transmission electron microscopy suggested the formation of an aluminum-based polycrystalline phase dispersed in an amorphous aluminum oxide/nitride (or oxynitride) matrix. This type of structure, composition, morphology and grain size, were found to be strongly correlated with the electrical response of the films, which showed a gradual transition between metallic-like responses towards semiconducting and even insulating-type behaviors. A group of films with high aluminum content revealed a sharp decrease of the temperature coefficient of resistance (TCR) as the concentration ratio of non-metallic/aluminum atomic ratio increased. Another group of samples, where the non-metallic content became more important, revealed a smooth transition between positive and negative values of TCR. In order to test whether the oxynitride films have a unique behavior or simply a transition between the typical responses of aluminum and of those of the correspondent nitride and oxide, the electrical properties of the ternary oxynitride system were compared with AlN{sub x} and AlO{sub y} systems, prepared in similar conditions. - Highlights: Black-Right-Pointing-Pointer AlN{sub x}O{sub y} thin films were produced using magnetron sputtering. Black-Right-Pointing-Pointer AlN{sub x}O{sub y} film morphology, composition and

  16. The magnetic characteristics of perpendicular magnetic tunnel junction with MgO and Al-O oxidation layers in various thickness

    International Nuclear Information System (INIS)

    Chen, T.-J.; Canizo-Cabrera, A.; Chang, C.-H.; Liao, K.-A.; Li, Simon C.; Hou, C.-K.; Wu Teho

    2006-01-01

    In this work we show the magnetic characteristics of perpendicular magnetic tunnel junction (pMTJ) with different oxidation layers. The pMTJs structures were made by RF and DC magnetron sputtering. Individual depositions of magnesium oxide layers and of aluminum oxide films were prepared by plasma oxidation. The experimental results showed that the initial switching field was decreased as the magnesium oxide thickness was increased. Further work of the aluminum oxide surface roughness and hysteresis loop influenced by different oxidation layers on pMTJs structures will be discussed as well

  17. Sputtered indium oxide films

    International Nuclear Information System (INIS)

    Gillery, F.H.

    1986-01-01

    A method is described for depositing on a substrate multiple layer films comprising at least one primary layer of a metal oxide and at least one primary layer of a metal other than the metal of the oxide layer. The improvement described here comprises improving the adhesion between the metal oxide and metal layers by depositing between the layers an intermediate metal-containing layer having an affinity for both the metal and metal oxide layers. An article of manufacture is described comprising a nonmetallic substrate, and deposited thereon in any order: a. at least one coating layer of metal; b. at least one coating layer of an oxide of a metal other than the metal of the metal layer; and c. deposited between the metal and metal oxide layers an intermediate metal-containing layer having an affinity for both the metal and metal oxide layers

  18. Oxide film assisted dopant diffusion in silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Tin, Chin-Che, E-mail: cctin@physics.auburn.ed [Department of Physics, Auburn University, Alabama 36849 (United States); Mendis, Suwan [Department of Physics, Auburn University, Alabama 36849 (United States); Chew, Kerlit [Department of Electrical and Electronic Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Kuala Lumpur (Malaysia); Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin [Physical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent (Uzbekistan); Atabaev, Bakhtiyar [Institute of Electronics, Uzbek Academy of Sciences, 700125 Tashkent (Uzbekistan); Adedeji, Victor [Department of Chemistry, Geology and Physics, Elizabeth City State University, North Carolina 27909 (United States); Rusli [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore)

    2010-10-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  19. Oxide film assisted dopant diffusion in silicon carbide

    International Nuclear Information System (INIS)

    Tin, Chin-Che; Mendis, Suwan; Chew, Kerlit; Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin; Atabaev, Bakhtiyar; Adedeji, Victor; Rusli

    2010-01-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  20. Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal - oxide - semiconductor field-effect transistors: Effective electron mobility

    International Nuclear Information System (INIS)

    Ragnarsson, L.-A degree.; Guha, S.; Copel, M.; Cartier, E.; Bojarczuk, N. A.; Karasinski, J.

    2001-01-01

    We report on high effective mobilities in yttrium-oxide-based n-channel metal - oxide - semiconductor field-effect transistors (MOSFETs) with aluminum gates. The yttrium oxide was grown in ultrahigh vacuum using a reactive atomic-beam-deposition system. Medium-energy ion-scattering studies indicate an oxide with an approximate composition of Y 2 O 3 on top of a thin layer of interfacial SiO 2 . The thickness of this interfacial oxide as well as the effective mobility are found to be dependent on the postgrowth anneal conditions. Optimum conditions result in mobilities approaching that of SiO 2 -based MOSFETs at higher fields with peak mobilities at approximately 210 cm 2 /Vs. [copyright] 2001 American Institute of Physics

  1. Microstructure and corrosion resistance of a fluorosilane modified silane-graphene film on 2024 aluminum alloy

    Science.gov (United States)

    Dun, Yuchao; Zhao, Xuhui; Tang, Yuming; Dino, Sahib; Zuo, Yu

    2018-04-01

    Heptadecafluorodecyl trimethoxysilane (FAS-17) was incorporated into γ-(2,3-epoxypropoxy) propyltrimethoxysilane/graphene (GPTMS/rGO) by adding pre-hydrolyzed FAS-17 solution in GPTMS solution, and a hybrid silane-graphene film (FG/rGO) was prepared on 2024 aluminum alloy surface. The FG/rGO film showed better thermal shock resistance, good adhesion force and high micro-hardness, compared with GPTMS/rGO film. In neutral 3.5 wt% NaCl solution, the corrosion current density for 2024 AA sample with FG/rGO film was 3.40 × 10-3 μA/cm2, which is about one fifth of that for the sample with GPTMS/rGO film. In acidic and alkaline NaCl solutions, the FG/rGO film also showed obviously better corrosion resistance than GPTMS/rGO film. EIS results confirm that the FG/rGO film showed longer performance than GPTMS/rGO film for 2024 AA in NaCl solution. The hydrophobic FAS-17 increased water contact angle of the film surface from 68° to 113°, and changed the stacking structure of graphene in the film. The higher crosslink degree and less interfaces promoted the barrier property of FG/rGO film against aggressive ions and prolonged the performance time in NaCl solution.

  2. The effect of different aluminum alloy surface compositions on barrier anodic film formation

    International Nuclear Information System (INIS)

    Panitz, J.K.G.; Sharp, D.J.

    1984-01-01

    The authors have grown barrier anodic coatings on samples of aluminum alloy with different elemental surface compositions. In one series of experiments, they characterized the surface composition present on 6061 aluminum alloy samples after different chemical treatments including a detergent-water and methyl-ethyl ketone solvent clean, a 50% nitric acid-water etch, and a concentrated nitric acid-ammonium bifluoride etch. They anodized samples which were prepared similarly to those analyzed to evaluate the practical effects of the three different surface compositions. The anodization voltage rise time to 950V at constant current was used as a figure of merit. The solvent cleaned and the 50% nitric acid etched samples required, respectively, 113% and 41% more time to reach 950V than the concentrated nitric acidammonium bifloride etched samples. In a second series of experiments, they alternately anodized groups of either 6061 or 1100 (commercially pure) aluminum alloy, observed rise times to 950V, and measured chloride ion concentrations in the electrolyte. Longer rise times and higher chloride ion concentrations were observed for the 1100 samples. It was observed that the chloride ion concentration fell from initially high levels when 6061 samples were anodized. The results of both series of experiments augment the results of other investigators, who report that the surface species initially present on aluminum have a significant effect on anodic film formation

  3. Pull-test adhesion measurements of diamondlike carbon films on silicon carbide, silicon nitride, aluminum oxide, and zirconium oxide

    International Nuclear Information System (INIS)

    Erck, R.A.; Nichols, F.A.; Dierks, J.F.

    1994-01-01

    Hydrogenated amorphous carbon or diamondlike carbon (DLC) films were formed by 400 eV methane (CH 4 ) ion bombardment of various smooth and rough ceramics, as well as ceramics coated with a layer of Si or Ti. Adhesion was measured by a bonded-pin method. Excellent adhesion was measured for smooth SiC and Si 3 N 4 , but adhesion of DLC to smooth Al 2 O 3 and ZrO 2 was negligible. The use of a Si bonding interlayer produced good adhesion to all the substrates, but a Ti layer was ineffective due to poor bonding between the DLC film and Ti. Bulk thermodynamic calculations are not directly applicable to bonding at the interface because the interface is two dimensional and the compositions of interfacial phases are generally not known. If the standard enthalpy ΔH degree for the reaction between CH 4 and the substrate material is calculated under the assumption that a carbide phase is produced, a relationship is seen between the reaction enthalpy and the relative adhesion. Large positive enthalpies are associated with poor adhesion; negative or small positive enthalpies are associated with good adhesion. This relation between enthalpy and adhesion was also observed for DLC deposited on Si. The lack of adhesion to the Ti was attributed to inadvertent formation of a surface oxide layer that rendered the enthalpy for the reaction with CH 4 positive

  4. Aluminum doped nickel oxide thin film with improved electrochromic performance from layered double hydroxides precursor in situ pyrolytic route

    International Nuclear Information System (INIS)

    Shi, Jingjing; Lai, Lincong; Zhang, Ping; Li, Hailong; Qin, Yumei; Gao, Yuanchunxue; Luo, Lei; Lu, Jun

    2016-01-01

    Electrochromic materials with unique performance arouse great interest on account of potential application values in smart window, low-power display, automobile anti-glare rearview mirror, and e-papers. In this paper, high-performing Al-doped NiO porous electrochromic film grown on ITO substrate has been prepared via a layered double hydroxides(LDHs) precursor in situ pyrolytic route. The Al 3+ ions distributed homogenously within the NiO matrix can significantly influence the crystallinity of Ni-Al LDH and NiO:Al 3+ films. The electrochromic performance of the films were evaluated by means of UV–vis absorption spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and chronoamperometry(CA) measurements. In addition, the ratio of Ni 3+ /Ni 2+ also varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range (58.4%), fast switching speed (bleaching/coloration times are 1.8/4.2 s, respectively) and excellent durability (30% decrease after 2000 cycles). The improved performance was owed to the synergy of large NiO film specific surface area and porous morphology, as well as Al doping stifled the formation of Ni 3+ making bleached state more pure. This LDHs precursor pyrolytic method is simple, low-cost and environmental benign and is feasible for the preparation of NiO:Al and other Al-doped oxide thin film. - Graphical abstract: The ratio of Ni 3+ /Ni 2+ varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range, fast switching speed and excellent durability. Display Omitted

  5. Advances on aluminum first-surface solar reflectors

    Science.gov (United States)

    Almanza, Rafael; Chen, Jiefeng; Mazari, Marcos

    1992-11-01

    Aluminum first surface mirrors have some advantages over second surface mirrors as has been discussed. At this stage of development some advantages are obtained: the first advantage was using two electron guns, one for aluminum evaporation permitting us to eliminate or to minimize the pinholes and the other to allow the evaporation of SiO without any mirror contamination as it was before due to the air when the chamber was opened to introduce the SiO, despite having only one e-gun in the laboratory. The second advantage was a better adherence between the aluminum film and the Si2O3, this last substance obtained with an oxidation of SiO with some oxygen inside the evaporation chamber (10-4 Torr). This improvement was due to the use of two e-guns that permit us not to open the chamber. These mirrors are actually under test in the environmental chamber for accelerated weather evaluations. One important aspect is the cleaning of the glass substrate. The chromic mixture cleaning is one of the most effective.

  6. Improved conductivity of ZnO thin films by exposure to an atmospheric hydrogen plasma

    NARCIS (Netherlands)

    Illiberi, A.; Kniknie, B.; Deelen, J. van; Steijvers, H.L.A.H.; Habets, D.; Simons, P.J.P.M.; Janssen, A.C.; Beckers, E.H.A.

    2012-01-01

    Aluminum-doped zinc oxide (ZnOx:Al) films have been deposited on a moving glass substrate by a high throughput metalorganic chemical vapor deposition process at atmospheric pressure. Thin (< 250 nm) ZnOx:Al films have a poor crystalline quality, due to a small grain size and the presence of

  7. Aluminum cladding oxidation of prefilmed in-pile fueled experiments

    Energy Technology Data Exchange (ETDEWEB)

    Marcum, W.R., E-mail: marcumw@engr.orst.edu [Oregon State University, School of Nuclear Science and Engineering, 116 Radiation Center, Corvallis, OR 97331 (United States); Wachs, D.M.; Robinson, A.B.; Lillo, M.A. [Idaho National Laboratory, Nuclear Fuels & Materials Department, 2525 Fremont Ave., Idaho Falls, ID 83415 (United States)

    2016-04-01

    A series of fueled irradiation experiments were recently completed within the Advanced Test Reactor Full size plate In center flux trap Position (AFIP) and Gas Test Loop (GTL) campaigns. The conduct of the AFIP experiments supports ongoing efforts within the global threat reduction initiative (GTRI) to qualify a new ultra-high loading density low enriched uranium-molybdenum fuel. This study details the characterization of oxide growth on the fueled AFIP experiments and cross-correlates the empirically measured oxide thickness values to existing oxide growth correlations and convective heat transfer correlations that have traditionally been utilized for such an application. This study adds new and valuable empirical data to the scientific community with respect to oxide growth measurements of highly irradiated experiments, of which there is presently very limited data. Additionally, the predicted oxide thickness values are reconstructed to produce an oxide thickness distribution across the length of each fueled experiment (a new application and presentation of information that has not previously been obtainable in open literature); the predicted distributions are compared against experimental data and in general agree well with the exception of select outliers. - Highlights: • New experimental data is presented on oxide layer thickness of irradiated aluminum fuel. • Five oxide growth correlations and four convective heat transfer correlations are used to compute the oxide layer thickness. • The oxide layer thickness distribution is predicted via correlation for each respective experiment. • The measured experiment and predicted distributions correlate well, with few outliers.

  8. Lithium insertion in sputtered vanadium oxide film

    DEFF Research Database (Denmark)

    West, K.; Zachau-Christiansen, B.; Skaarup, S.V.

    1992-01-01

    were oxygen deficient compared to V2O5. Films prepared in pure argon were reduced to V(4) or lower. The vanadium oxide films were tested in solid-state lithium cells. Films sputtered in oxygen showed electrochemical properties similar to crystalline V2O5. The main differences are a decreased capacity...

  9. Phonon transport in a curved aluminum thin film due to laser short pulse irradiation

    Science.gov (United States)

    Mansoor, Saad Bin; Yilbas, Bekir Sami

    2018-05-01

    Laser short-pulse heating of a curved aluminum thin film is investigated. The Boltzmann transport equation is incorporated to formulate the heating situation. A Gaussian laser intensity distribution is considered along the film arc and time exponentially decaying of pulse intensity is incorporated in the analysis. The governing equations of energy transport in the electron and lattice sub-systems are coupled through the electron-phonon coupling parameter. To quantify the phonon intensity distribution in the thin film, equivalent equilibrium temperature is introduced, which is associated with the average energy of all phonons around a local point when the phonon energies are redistributed adiabatically to an equilibrium state. It is found the numerical simulations that electron temperature follows similar trend to the spatial distribution of the laser pulse intensity at the film edge. Temporal variation of electron temperature does not follow the laser pulse intensity distribution. The rise of temperature in the electron sub-system is fast while it remains slow in the lattice sub-system.

  10. Properties of Al- and Ga-doped thin zinc oxide films treated with UV laser radiation

    Science.gov (United States)

    Al-Asedy, Hayder J.; Al-Khafaji, Shuruq A.; Bakhtiar, Hazri; Bidin, Noriah

    2018-03-01

    This paper reports the Nd:YAG laser irradiation treated modified properties of aluminum (Al) and gallium (Ga) co-doped zinc oxide (ZnO) (AGZO) films prepared on Si-substrate via combined sol-gel and spin-coating method. The impact of varying laser energy (150-200 mJ) on the structure, morphology, electrical and optical properties of such AGZO films were determined. Laser-treated samples were characterized using various analytical tools. Present techniques could achieve a high-quality polycrystalline films compared with those produced via conventional high temperature processing. AGZO films irradiated with third harmonics UV radiation (355 nm) from Nd:YAG laser source revealed very low resistivity of 4.02 × 10- 3 Ω cm. The structural properties grain size was calculated firm the X-ray diffraction spectra using the Scherrer equation that increased from 12.7 to 22.5 nm as the annealing laser energy increased from (150-200) mJ. The differences in crystallinity and orientation are explained in terms of the thermal effect caused by laser irradiation. (FESEM) images have been demonstrated that Nd:YAG laser annealing can significantly improve the crystallinity level, densification, and surface flatness of sol-gel derived AGZO thin films that occurred as a result of laser processing. Synthesized AGZO films displayed favorable growth orientation along (101) lattice direction. AGZO films with energy band gap of 3.37-3.41 eV were obtained. Results on the crystallinity, surface morphology, roughness, bonding vibration, absorption, photoluminescence, and resistivity of the laser-irradiated films were analyzed and discussed.

  11. Spark counting technique with an aluminium oxide film

    International Nuclear Information System (INIS)

    Kawai, H.; Koga, T.; Morishima, H.; Niwa, T.; Nishiwaki, Y.

    1980-01-01

    Automatic spark counting of etch-pits on a polycarbonate film produced by nuclear fission fragments is now used for neutron monitoring in several countries. A method was developed using an aluminium oxide film instead of a polycarbonate as the neutron detector. Aluminium oxide films were prepared as follows: A cleaned aluminium plate as an anode and a nickel plate as a cathode were immersed in dilute sulfuric acid solution and electric current flowed between the electrodes at 12degC for 10-30 minutes. Electric current density was about 10 mA/cm 2 . The aluminium plate was then kept in boiling water for 10-30 minutes for sealing. The thickness of the aluminium oxide layer formed was about 1μm. The aluminium plate attached to a plate of suitable fissionable material, such as uranium or thorium, was irradiated with neutrons and set in a usual spark counter for fission track counting. One electrode was the aluminium plate and the other was an aluminized polyester sheet. Sparked pulses were counted with a usual scaler. The advantage of using spark counting with an aluminium oxide film for neutron monitoring is rapid measurement of neutron exposure, since chemical etching which is indispensable for spark counting with a polycarbonate detector film, is not needed. (H.K.)

  12. Electro-mechanical coupling of semiconductor film grown on stainless steel by oxidation

    Science.gov (United States)

    Lin, M. C.; Wang, G.; Guo, L. Q.; Qiao, L. J.; Volinsky, Alex A.

    2013-09-01

    Electro-mechanical coupling phenomenon in oxidation film on stainless steel has been discovered by using current-sensing atomic force microscopy, along with the I-V curves measurements. The oxidation films exhibit either ohmic, n-type, or p-type semiconductor properties, according to the obtained I-V curves. This technique allows characterizing oxidation films with high spatial resolution. Semiconductor properties of oxidation films must be considered as additional stress corrosion cracking mechanisms.

  13. Effect of temperature on the anodizing process of aluminum alloy AA 5052

    Science.gov (United States)

    Theohari, S.; Kontogeorgou, Ch.

    2013-11-01

    The effect of temperature (10-40 °C) during the anodizing process of AA 5052 for 40 min in 175 g/L sulfuric acid solution at constant voltage (15 V) was studied in comparison with pure aluminum. The incorporated magnesium species in the barrier layer result in the further increase of the minimum current density passed during anodizing, as the temperature increases, by about 42% up to 30 °C and then by 12% up to 40 °C. Then during the anodizing process for 40 min a blocking effect on oxide film growth was gradually observed as the temperature increased until 30 °C. The results of EDAX analysis on thick films reveal that the mean amount of the magnesium species inside the film is about 50-70% less than that in the bulk alloy, while it is higher at certain locations adjacent to the film surface at 30 °C. The increase of anodizing temperature does not influence the porosity of thin films (formed for short times) on pure aluminum, while it reduces it on the alloy. At 40 °C the above mentioned blocking effects disappear. It means that the presence of magnesium species causes an impediment to the effect of temperature on iss, on the film thickness and on the porosity of thin films, only under conditions where film growth takes place without significant loss of the anodizing charge to side reactions.

  14. Standard specification for nuclear-grade aluminum oxide pellets

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2008-01-01

    1.1 This specification applies to pellets of aluminum oxide that may be ultimately used in a reactor core, for example, as filler or spacers within fuel, burnable poison, or control rods. In order to distinguish between the subject pellets and “burnable poison” pellets, it is established that the subject pellets are not intended to be used as neutron-absorbing material. 1.2 The values stated in inch-pound units are to be regarded as standard. The values given in parentheses are mathematical conversions to SI units that are provided for information only and are not considered standard.

  15. Synthesis and luminescent properties of PEO/lanthanide oxide nanoparticle hybrid films

    International Nuclear Information System (INIS)

    Goubard, F.; Vidal, F.; Bazzi, R.; Tillement, O.; Chevrot, C.; Teyssie, D.

    2007-01-01

    In this study, we investigate the optical properties of lanthanide oxide nanoparticles dispersed in poly(ethylene oxide) (PEO) network as thermally stable polymeric films. The aim of this work is both to keep a good optical transparency in the visible domain and to obtain luminescent materials after incorporation of nanoparticles. For this purpose, we develop luminescent nanocrystals of oxides containing terbium ion as a doping element in Gd 2 O 3 . These sub-5-nm lanthanide oxides nanoparticles have been prepared by direct oxide precipitation in high-boiling polyalcohol solutions and characterized by luminescence spectroscopy. PEO/lanthanide oxide nanohybrid films are prepared by radical polymerization of poly(ethylene glycol) methacrylate after introduction of lanthanide oxide particles. As a first result; the obtained films present interesting luminescence properties with a very low lanthanide oxide content (up to 0.29 wt%). Furthermore, these films are still transparent and keep their original mechanical properties. Prior to describe the specific applications to optical use, we report here the dynamic mechanical analysis (DMA), X-ray diffraction (XRD) analysis, transmission electron microscopy (TEM), and luminescent properties of. nanohybrid films

  16. Surface and sub-surface thermal oxidation of thin ruthenium films

    NARCIS (Netherlands)

    Coloma Ribera, R.; van de Kruijs, Robbert Wilhelmus Elisabeth; Kokke, S.; Zoethout, E.; Yakshin, Andrey; Bijkerk, Frederik

    2014-01-01

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low

  17. In situ detection of porosity initiation during aluminum thin film anodizing

    Science.gov (United States)

    Van Overmeere, Quentin; Nysten, Bernard; Proost, Joris

    2009-02-01

    High-resolution curvature measurements have been performed in situ during aluminum thin film anodizing in sulfuric acid. A well-defined transition in the rate of internal stress-induced curvature change is shown to allow for the accurate, real-time detection of porosity initiation. The validity of this in situ diagnostic tool was confirmed by a quantitative analysis of the spectral density distributions of the anodized surfaces. These were obtained by analyzing ex situ atomic force microscopy images of surfaces anodized for different times, and allowed to correlate the in situ detected transition in the rate of curvature change with the appearance of porosity.

  18. Packaging material and aluminum. Hoso zairyo to aluminum

    Energy Technology Data Exchange (ETDEWEB)

    Itaya, T [Mitsubishi Aluminum Co. Ltd., Tokyo (Japan)

    1992-02-01

    The present paper introduces aluminum foil packaging materials among the relation between packing materials and aluminum. The characteristics of aluminum foil in the packaging area are in its barrier performance, non-toxicity, tastelessness and odorlessness. Its excellent functions and processibility suit best as functional materials for food, medicine and industrial material packaging. While an aluminum foil may be used as a single packing material as in foils used in homes, many of it as a packaging material are used in combination with adhesives, papers or plastic films, or coated or printed. It is used as composite materials laminated or coated with other materials according to their use for the purpose of complementing the aluminum foil as the base material. Representative method to laminate aluminum foils include the wet lamination, dry lamination, thermally dissolved lamination and extruded lamination. The most important quality requirement in lamination is the adhesion strength, which requires a close attention in selecting the kinds of adhesive, laminating conditions, and aging conditions. 8 figs., 6 tabs.

  19. Electrochemical characterization of oxide film formed at high temperature on Alloy 690

    Energy Technology Data Exchange (ETDEWEB)

    Abraham, Geogy J., E-mail: gja@barc.gov.in [Materials Science Division, BARC, Mumbai 400 085 (India); Bhambroo, Rajan [Deptt. of Metallurgical Engg. and Mat. Sci., IIT Bombay, Mumbai 400 076 (India); Kain, V. [Materials Science Division, BARC, Mumbai 400 085 (India); Shekhar, R. [CCCM, BARC, Hyderabad 500 062 (India); Dey, G.K. [Materials Science Division, BARC, Mumbai 400 085 (India); Raja, V.S. [Deptt. of Metallurgical Engg. and Mat. Sci., IIT Bombay, Mumbai 400 076 (India)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer GD-QMS studies of high temperature oxide film formed on Alloy 690. Black-Right-Pointing-Pointer Defect density reduced with increase in temperature. Black-Right-Pointing-Pointer Electrochemical behaviour of oxide film correlated to the Cr-content in oxide. - Abstract: High temperature passivation studies on Alloy 690 were carried out in lithiated water at 250 Degree-Sign C, 275 Degree-Sign C and 300 Degree-Sign C for 72 h. The passive films were characterized by glow discharge-quadrupole mass spectroscopy (GD-QMS) for compositional variation across the depth and micro laser Raman spectroscopy for oxide composition on the surface. The defect density in the oxide films was established from the Mott-Schottky analysis using electrochemical impedance spectroscopy. Electrochemical experiments at room temperature in chloride medium revealed best passivity behaviour by the oxide film formed at 300 Degree-Sign C for 72 h. The electrochemical studies were correlated to the chromium (and oxygen) content of the oxide films. Autoclaving at 300 Degree-Sign C resulted in the best passive film formation on Alloy 690 in lithiated water.

  20. Thermal oxidation of Zr–Cu–Al–Ni amorphous metal thin films

    International Nuclear Information System (INIS)

    Oleksak, R.P.; Hostetler, E.B.; Flynn, B.T.; McGlone, J.M.; Landau, N.P.; Wager, J.F.; Stickle, W.F.; Herman, G.S.

    2015-01-01

    The initial stages of thermal oxidation for Zr–Cu–Al–Ni amorphous metal thin films were investigated using X-ray photoelectron spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy. The as-deposited films had oxygen incorporated during sputter deposition, which helped to stabilize the amorphous phase. After annealing in air at 300 °C for short times (5 min) this oxygen was found to segregate to the surface or buried interface. Annealing at 300 °C for longer times leads to significant composition variation in both vertical and lateral directions, and formation of a surface oxide layer that consists primarily of Zr and Al oxides. Surface oxide formation was initially limited by back-diffusion of Cu and Ni ( 30 min). The oxidation properties are largely consistent with previous observations of Zr–Cu–Al–Ni metallic glasses, however some discrepancies were observed which could be explained by the unique sample geometry of the amorphous metal thin films. - Highlights: • Thermal oxidation of amorphous Zr–Cu–Al–Ni thin films was investigated. • Significant short-range inhomogeneities were observed in the amorphous films. • An accumulation of Cu and Ni occurs at the oxide/metal interface. • Diffusion of Zr was found to limit oxide film growth.

  1. CuOX thin films by direct oxidation of Cu films deposited by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    D. Santos-Cruz

    Full Text Available Thin films of Cu2O and CuO oxides were developed by direct oxidation of physical vapor deposited copper films in an open atmosphere by varying the temperature in the range between 250 and 400 °C. In this work, the influence of oxidation temperature on structural, optical and electrical properties of copper oxide films has been discussed. The characterization results revealed that at lower temperatures (<300 °C, it is feasible to obtained coper (I oxide whereas at temperatures higher than 300 °C, the copper (II oxide is formed. The band gap is found to vary in between 1.54 and 2.21 eV depending on the oxidation temperature. Both oxides present p-type electrical conductivity. The carrier concentration has been increased as a function of the oxidation temperature from 1.61 × 1012 at 250 °C to 6.8 × 1012 cm−3 at 400 °C. The mobility has attained its maximum of 34.5 cm2 V−1 s−1 at a temperature of 300 °C, and a minimum of 13.8 cm2 V−1 s−1 for 400 °C. Finally, the resistivity of copper oxide films decreases as a function of oxidation temperature from 5.4 × 106 to 2.4 × 105 Ω-cm at 250 and 400 °C, respectively. Keywords: PVD, Oxidizing annealed treatment, Non-toxic material

  2. In situ monitoring of thermal crystallization of ultrathin tris(8-hydroxyquinoline) aluminum films using surface-enhanced Raman scattering.

    Science.gov (United States)

    Muraki, Naoki

    2014-01-01

    Thermal crystallization of 3, 10, and 60 nm-thick tris(8-hydroxyquinoline)aluminum (Alq3) films is studied using surface-enhanced Raman scattering with a constant heating rate. An abrupt higher frequency shift of the quinoline-stretching mode is found to be an indication of a phase transition of Alq3 molecules from amorphous to crystalline. While the 60 nm-thick film shows the same crystallization temperature as a bulk sample, the thinner films were found to have a lower crystallization temperature and slower rate of crystallization. Non-isothermal kinetics analysis is performed to quantify kinetic properties such as the Avrami exponent constants and crystallization rates of ultrathin Alq3 films.

  3. Deposition and characterization of TaAIN thin films by reactive magnetron sputtering; Deposicao e caracterizacao de filmes finos de TaAIN depositados por magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, G.B.; Fernandez, D.R.; Fontes Junior, A.S.; Felix, L.C.; Tentardini, E.K. [Universidade Federal de Sergipe (UFS), Sao Cristovao, SE (Brazil). Departamento de Ciencia e Engenharia de Materiais; Hubler, R. [Pontificia Universidade Catolica do Rio Grande do Sul (PUC-RS), RS (Brazil); Silva Junior, A.H. da, E-mail: brito-g@hotmail.com [Universidade Federal do Rio Grande do Sul (UFRGS), RS (Brazil)

    2016-07-01

    Phase stability, oxidation resistance and great mechanical properties are the main objectives when synthesizing protective coatings. The tantalum nitride (TaN) has aroused interest because of its high temperature stability, chemical inertness and thermal conductivity. However, it has a low hardness value when compared to other coatings. Researches has shown that one way to improvements in the properties of a thin film is by adding other elements in the deposition process. Therefore, the objective of this study was to deposit thin films of TaAlN by magnetron sputtering, changing the aluminum concentration of 2, 5, 7, to 14%. Then the coatings were characterized by EDS, RBS, GIXRD and nanohardness. In this study was found that the aluminum deposited did not change the oxidation resistance of the coating, and the highest value of hardness was 28 GPa for the sample with 14 at.%. (author)

  4. Photoconduction in silicon rich oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Luna-Lopez, J A; Carrillo-Lopez, J; Flores-Gracia, F J; Garcia-Salgado, G [CIDS-ICUAP, Benemerita Universidad Autonoma de Puebla. Ed. 103 D and C, col. San Manuel, Puebla, Pue. Mexico 72570 (Mexico); Aceves-Mijares, M; Morales-Sanchez, A, E-mail: jluna@buap.siu.m, E-mail: jluna@inaoep.m [INAOE, Luis Enrique Erro No. 1, Apdo. 51, Tonantzintla, Puebla, Mexico 72000 (Mexico)

    2009-05-01

    Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH{sub 4} (silane) and N{sub 2}O (nitrous oxide) as reactive gases at 700 {sup 0}. The gas flow ratio, Ro = [N{sub 2}O]/[SiH{sub 4}] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to R{sub o} = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies ({approx}3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

  5. Films deposited from reactive sputtering of aluminum acetylacetonate under low energy ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Battaglin, Felipe Augusto Darriba; Prado, Eduardo Silva; Cruz, Nilson Cristino da; Rangel, Elidiane Cipriano, E-mail: elidiane@sorocaba.unesp.br [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Sorocaba, SP (Brazil). Lab. de Plasmas Tecnologicos; Caseli, Luciano [Universidade Federal de Sao Paulo (UNIFESP), Diadema, SP (Brazil). Instituto de Ciencias Ambientais, Quimicas e Farmaceuticas; Silva, Tiago Fiorini da; Tabacniks, Manfredo Harri [Universidade de Sao Paulo (USP), SP (Brazil). Instituto de Fisica

    2017-07-15

    Films were deposited from aluminum acetylacetonate (Al(acac)3 ) using a methodology involving reactive sputtering and low energy ion bombardment. The plasma was generated by the application of radiofrequency power to the powder containing electrode and simultaneously, negative pulses were supplied to the electrode where the substrates were attached. It was investigated the effect of the duty cycle of the pulses (Δ) on the properties of the coatings. Association of ion bombardment to the deposition process increased film thickness, structure reticulation and organic content. Ions from the deposition environment were implanted at the film-air interface or underneath it. Morphology and topography were altered depending on Δ. Considering the enhancement of Δ, it affected the flux of ions reaching the depositing interface and then the deposition rate, H content, crosslinking degree and surface microstructure. Alumina groups were detected in the infrared spectra, whereas the precipitation of amorphous alumina was confirmed by X-ray diffraction. (author)

  6. Adhesion and corrosion studies of a lithium based conversion coating film on the 2024 aluminum alloy

    International Nuclear Information System (INIS)

    Castro, M.R.S.; Nogueira, J.C.; Thim, G.P.; Oliveira, M.A.S.

    2004-01-01

    AA2024-T3-aluminum alloy surfaces were coated using non-chromate and chromate conversion coatings. All coatings were painted with the 10P4-2-primer epoxy resin. Independent on the film formation process, films passed on the substrate/conversion coating wet tape adhesion test. However, only the chromate conversion coating passed on the conversion coating/primer epoxy resin adhesion test. Electrochemical corrosion measurements showed that non-chromate conversion coated surfaces present lower corrosion current density, bigger polarization resistance and less negative corrosion potential than chromate conversion coated surfaces

  7. Passivation of aluminum with alkyl phosphonic acids for biochip applications

    Science.gov (United States)

    Attavar, Sachin; Diwekar, Mohit; Linford, Matthew R.; Davis, Mark A.; Blair, Steve

    2010-09-01

    Self-assembly of decylphosphonic acid (DPA) and octadecylphosphonic acid (ODPA) was studied on aluminum films using XPS, ToF-SIMS and surface wettability. Modified aluminum films were tested for passivation against silanization and subsequent oligonucleotide attachment. Passivation ratios of at least 450:1 compared to unprotected aluminum were obtained, as quantified by attachment of radio-labeled oligos.

  8. Influence of oxidation state on the pH dependence of hydrous iridium oxide films

    International Nuclear Information System (INIS)

    Steegstra, Patrick; Ahlberg, Elisabet

    2012-01-01

    Many electrochemical reactions taking place in aqueous solution consume or produce protons. The pH in the diffusion layer can therefore be significantly altered during the reaction and there is a need for in situ pH measurements tracing this near surface pH. In the present paper the rotating ring disc technique was used to measure near surface pH changes during oxygen reduction, utilising hydrous iridium oxide as the pH sensing probe. Before such experiments a good understanding of the pH sensing properties of these films is required and the impact of the oxidation state of the film on the pH sensing properties was investigated as well as the influence of solution redox species. The pH sensitivity (depicted by dE/dpH) was found to depend on the average oxidation state of the film in a manner resembling the cyclic voltammetry response. In all cases the pH response is “supernernstian” with more than one proton per electron. The origin of this behaviour is discussed in the context of acid-base properties of the film and the existence of both hydrous and anhydrous oxide phases. The pH response depends also on the redox properties of the solution but can be optimised for various purposes by conditioning the film at different potentials. This was clearly illustrated by adding hydrogen peroxide, an intermediate in the oxygen reduction reaction, to the solution. It was shown that hydrous iridium oxide can be used as a reliable in situ pH sensor provided that care is taken to optimise the oxidation state of the film.

  9. The role of polymer films on the oxidation of magnetite nanoparticles

    Science.gov (United States)

    Letti, C. J.; Paterno, L. G.; Pereira-da-Silva, M. A.; Morais, P. C.; Soler, M. A. G.

    2017-02-01

    A detailed investigation about the role of polymer films on the oxidation process of magnetite nanoparticles (∼7 nm diameter), under laser irradiation is performed employing micro Raman spectroscopy. To support this investigation, Fe3O4-np are synthesized by the co-precipitation method and assembled layer-by-layer with sodium sulfonated polystyrene (PSS). Polymer films (Fe3O4-np/PSS)n with n=2,3,5,7,10 and 25 bilayers are employed as a model system to study the oxidation process under laser irradiation. Raman data are further processed by principal component analysis. Our findings suggest that PSS protects Fe3O4-np from oxidation when compared to powder samples, even for the sample with the greater number of bilayers. Further, the oxidation of magnetite to maghemite occurs preferably for thinner films up to 7 bilayers, while the onset for the formation of the hematite phase depends on the laser intensity for thicker films. Water takes part on the oxidation processes of magnetite, the oxidation/phase transformation of Fe3O4-np is intensified in films with more bilayers, since more water is included in those films. Encapsulation of Fe3O4-np by PSS in layer-by-layer films showed to be very efficient to avoid the oxidation process in nanosized magnetite.

  10. Growth and thermal oxidation of Ru and ZrO2 thin films as oxidation protective layers

    NARCIS (Netherlands)

    Coloma Ribera, R.

    2017-01-01

    This thesis focuses on the study of physical and chemical processes occurring during growth and thermal oxidation of Ru and ZrO2 thin films. Acting as oxidation resistant capping materials to prevent oxidation of layers underneath, these films have several applications, i.e., in microelectronics

  11. Wettability of TiAlN films by molten aluminum

    Energy Technology Data Exchange (ETDEWEB)

    Shen Ping [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka Ibaraki, Osaka, 567-0047 (Japan) and Key Laboratory of Automobile Materials, Department of Materials Science and Engineering, Jilin University, No. 5988 Renmin Street, Changchun, 130025 (China)]. E-mail: shenping@jlu.edu.cn; Nose, Masateru [Department of Industrial Art and Craft, Takaoka National College, 180 Futagami-machi, Takaoka City, Toyama 933-8588 (Japan); Fujii, Hidetoshi [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka Ibaraki, Osaka, 567-0047 (Japan); Nogi, Kiyoshi [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka Ibaraki, Osaka, 567-0047 (Japan)

    2006-12-05

    In this study, we made an attempt to measure the wettability of the TiAlN films by molten Al at temperatures between 1073 K and 1273 K using an improved sessile drop method. The true contact angles cannot be obtained for the films deposited on the stainless steel and tungsten substrates due to considerable interdiffusion or reaction between molten Al and the substrate constituents. For the films deposited on the stable alumina single crystals and in contact with clean Al, the true contact angles are possible in the range of 80-100 deg. at 1173-1273 K and the work of adhesion is 0.77-1.08 J m{sup -2}. In the case of oxidized Al, typically at T < 1173 K, however, the wettability and the adhesion are significantly decreased.

  12. The role of polymer films on the oxidation of magnetite nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Letti, C.J. [Universidade de Brasilia, Instituto de Fisica, 70910-000 Brasilia, DF (Brazil); Paterno, L.G. [Universidade de Brasilia, Instituto de Quimica, 70910-000 Brasilia, DF (Brazil); Pereira-da-Silva, M.A. [Instituto de Fisica de São Carlos, USP, 13560-9700 São Carlos, SP (Brazil); Centro Universitario Central Paulista – UNICEP, 13563-470 São Carlos, SP (Brazil); Morais, P.C. [Universidade de Brasilia, Instituto de Fisica, 70910-000 Brasilia, DF (Brazil); Soler, M.A.G., E-mail: soler@unb.br [Universidade de Brasilia, Instituto de Fisica, 70910-000 Brasilia, DF (Brazil)

    2017-02-15

    A detailed investigation about the role of polymer films on the oxidation process of magnetite nanoparticles (∼7 nm diameter), under laser irradiation is performed employing micro Raman spectroscopy. To support this investigation, Fe{sub 3}O{sub 4}-np are synthesized by the co-precipitation method and assembled layer-by-layer with sodium sulfonated polystyrene (PSS). Polymer films (Fe{sub 3}O{sub 4}-np/PSS){sub n} with n=2,3,5,7,10 and 25 bilayers are employed as a model system to study the oxidation process under laser irradiation. Raman data are further processed by principal component analysis. Our findings suggest that PSS protects Fe{sub 3}O{sub 4}-np from oxidation when compared to powder samples, even for the sample with the greater number of bilayers. Further, the oxidation of magnetite to maghemite occurs preferably for thinner films up to 7 bilayers, while the onset for the formation of the hematite phase depends on the laser intensity for thicker films. Water takes part on the oxidation processes of magnetite, the oxidation/phase transformation of Fe{sub 3}O{sub 4}-np is intensified in films with more bilayers, since more water is included in those films. Encapsulation of Fe{sub 3}O{sub 4}-np by PSS in layer-by-layer films showed to be very efficient to avoid the oxidation process in nanosized magnetite. - Graphical abstract: Encapsulation of Fe{sub 3}O{sub 4}-np by PSS in layer-by-layer films avoids the oxidation and phase transformation of nanosized magnetite. - Highlights: • (Fe{sub 3}O{sub 4}-np/PSS){sub n} nanofilms, with n=2 up to 25, where layer-by-layer assembled. • The influence of film architecture on the Fe{sub 3}O{sub 4}-np oxidation was investigated through Raman spectroscopy. • Encapsulation of Fe{sub 3}O{sub 4}-np by PSS showed to be very efficient to avoid the Fe{sub 3}O{sub 4}-np oxidation.

  13. High optical transmittance of aluminum ultrathin film with hexagonal nanohole arrays as transparent electrode

    KAUST Repository

    Du, Qing Guo; Yue, Weisheng; Wang, Zhihong; Lau, Wah Tung; Ren, Hengjiang; Li, Er-Ping

    2016-01-01

    We fabricate samples of aluminum ultrathin films with hexagonal nanohole arrays and characterize the transmission performance. High optical transmittance larger than 60% over a broad wavelength range from 430 nm to 750 nm is attained experimentally. The Fano-type resonance of the excited surface plasmon plaritons and the directly transmitted light attribute to both of the broadband transmission enhancement and the transmission suppression dips. © 2016 Optical Society of America.

  14. High optical transmittance of aluminum ultrathin film with hexagonal nanohole arrays as transparent electrode

    KAUST Repository

    Du, Qing Guo

    2016-02-24

    We fabricate samples of aluminum ultrathin films with hexagonal nanohole arrays and characterize the transmission performance. High optical transmittance larger than 60% over a broad wavelength range from 430 nm to 750 nm is attained experimentally. The Fano-type resonance of the excited surface plasmon plaritons and the directly transmitted light attribute to both of the broadband transmission enhancement and the transmission suppression dips. © 2016 Optical Society of America.

  15. Deposition and Characterization of Hermetic, Biocompatible Thin Film Coatings for Implantable, Electrically Active Devices

    Science.gov (United States)

    Sweitzer, Robyn K.

    Retinal prostheses may be used to support patients suffering from Age-related macular degeneration or retinitis pigmentosa. A hermetic encapsulation of the poly(imide )-based prosthesis is important in order to prevent the leakage of water and ions into the electric circuitry embedded in the poly(imide) matrix. The deposition of amorphous aluminum oxide (by sputtering) and diamond like carbon (by pulsed laser ablation and vacuum arc vapor deposition) were studied for the application in retinal prostheses. The resulting thin films were characterized for composition, thickness, adhesion and smoothness by scanning electron microscopy-energy dispersive spectroscopy, atomic force microscopy, profilometry and light microscopy. Electrical stability was evaluated and found to be good. The as-deposited films prevented incursion of salinated fluids into the implant over two (2) three month trials soaking in normal saline at body temperature, Biocompatibility was tested in vivo by implanting coated specimen subretinally in the eye of Yucatan pigs. While amorphous aluminum oxide is more readily deposited with sufficient adhesion quality, biocompatibility studies showed a superior behavior of diamond-like carbon. Amorphous aluminum oxide had more adverse effects and caused more severe damage to the retinal tissue.

  16. Mammographic microcalcifications: Detection with xerography, screen-film, and digitized film display

    International Nuclear Information System (INIS)

    Smathers, R.L.; Bush, E.; Drace, J.; Stevens, M.; Sommer, F.G.; Brown, B.W.; Karras, B.

    1986-01-01

    Pulverized bone specks and aluminum oxide specks were measured by hand into sizes ranging from 0.2 mm to 1.0 mm and then arranged in clusters. These clusters were superimposed on a human breast tissue phantom, and xeromammograms and screen-film mammograms of the clusters were made. The screen-film mammograms were digitized using a high-resolution laser scanner and then displayed on cathode ray tube (CRT) monitors. Six radiologists independently counted the microcalcifications on the xeromammograms, the screen-film mammograms, and the digitized film mammograms. The xeromammograms were examined with a magnifying glass; the screen-film images were examined with a magnifying glass and by hot light; and the digitized-film images were examined by electronic magnification and image processing. The bone speck size that corresponded to a mean 50% detectability level for each technique was as follows: xeromammography, 0.550 mm; digitized film, 0.573 mm; and screen-film, 0.661 mm. We postulate that electronic magnification and image processing with edge enhancement can improve the capability of screen-film mammography to enhance the detection of microcalcifications

  17. Synthesis and luminescent properties of PEO/lanthanide oxide nanoparticle hybrid films

    Energy Technology Data Exchange (ETDEWEB)

    Goubard, F. [LPPI, Universite de Cergy-Pontoise, 5 Mail Gay-Lussac, Neuville-sur-Oise, 95031 Cergy-Pontoise cedex (France)]. E-mail: fabrice.goubard@u-cergy.fr; Vidal, F. [LPPI, Universite de Cergy-Pontoise, 5 Mail Gay-Lussac, Neuville-sur-Oise, 95031 Cergy-Pontoise cedex (France); Bazzi, R. [LPCML, Universite Lyon 1, 43 Bd. du 11 Novembre 1918, 69622 Villeurbanne (France); Tillement, O. [LPCML, Universite Lyon 1, 43 Bd. du 11 Novembre 1918, 69622 Villeurbanne (France); Nano-H, 23 rue Royal, 69001 Lyon (France); Chevrot, C. [LPPI, Universite de Cergy-Pontoise, 5 Mail Gay-Lussac, Neuville-sur-Oise, 95031 Cergy-Pontoise cedex (France); Teyssie, D. [LPPI, Universite de Cergy-Pontoise, 5 Mail Gay-Lussac, Neuville-sur-Oise, 95031 Cergy-Pontoise cedex (France)

    2007-10-15

    In this study, we investigate the optical properties of lanthanide oxide nanoparticles dispersed in poly(ethylene oxide) (PEO) network as thermally stable polymeric films. The aim of this work is both to keep a good optical transparency in the visible domain and to obtain luminescent materials after incorporation of nanoparticles. For this purpose, we develop luminescent nanocrystals of oxides containing terbium ion as a doping element in Gd{sub 2}O{sub 3}. These sub-5-nm lanthanide oxides nanoparticles have been prepared by direct oxide precipitation in high-boiling polyalcohol solutions and characterized by luminescence spectroscopy. PEO/lanthanide oxide nanohybrid films are prepared by radical polymerization of poly(ethylene glycol) methacrylate after introduction of lanthanide oxide particles. As a first result; the obtained films present interesting luminescence properties with a very low lanthanide oxide content (up to 0.29 wt%). Furthermore, these films are still transparent and keep their original mechanical properties. Prior to describe the specific applications to optical use, we report here the dynamic mechanical analysis (DMA), X-ray diffraction (XRD) analysis, transmission electron microscopy (TEM), and luminescent properties of. nanohybrid films.

  18. Study of oxide/metal/oxide thin films for transparent electronics and solar cells applications by spectroscopic ellipsometry

    Directory of Open Access Journals (Sweden)

    Mihaela Girtan

    2017-05-01

    Full Text Available A comprehensive study of a class of Oxide/Metal/Oxide (Oxide = ITO, AZO, TiO2 and Bi2O3, Metal = Au thin films was done by correlating the spectrophotometric studies with the ellispometric models. Films were deposited by successive sputtering from metallic targets In:Sn, Zn:Al, Ti and Bi in reactive atmosphere (for the oxide films and respective inert atmosphere (for the metallic Au interlayer films on glass substrates. The measurements of optical constants n—the refractive index and k—the extinction coefficient, at different incident photon energies for single oxide films and also for the three layers films oxide/metal/oxide samples were made using the spectroscopic ellipsometry (SE technique. The ellipsometry modelling process was coupled with the recorded transmission spectra data of a double beam spectrophotometer and the best fitting parameters were obtained not only by fitting the n and k experimental data with the dispersion fitting curves as usual is practiced in the most reported data in literature, but also by comparing the calculated the transmission coefficient from ellipsometry with the experimental values obtained from direct spectrophotometry measurements. In this way the best dispersion model was deduced for each sample. Very good correlations were obtained for the other different thin films characteristics such as the films thickness, optical band gap and electrical resistivity obtained by other measurements and calculation techniques. The ellipsometric modelling, can hence give the possibility in the future to predict, by ellipsometric simulations, the proper device architecture in function of the preferred optical and electrical properties.

  19. Aluminum doped nickel oxide thin film with improved electrochromic performance from layered double hydroxides precursor in situ pyrolytic route

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Jingjing; Lai, Lincong; Zhang, Ping; Li, Hailong; Qin, Yumei; Gao, Yuanchunxue; Luo, Lei; Lu, Jun, E-mail: lujun@mail.buct.edu.cn

    2016-09-15

    Electrochromic materials with unique performance arouse great interest on account of potential application values in smart window, low-power display, automobile anti-glare rearview mirror, and e-papers. In this paper, high-performing Al-doped NiO porous electrochromic film grown on ITO substrate has been prepared via a layered double hydroxides(LDHs) precursor in situ pyrolytic route. The Al{sup 3+} ions distributed homogenously within the NiO matrix can significantly influence the crystallinity of Ni-Al LDH and NiO:Al{sup 3+} films. The electrochromic performance of the films were evaluated by means of UV–vis absorption spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and chronoamperometry(CA) measurements. In addition, the ratio of Ni{sup 3+}/Ni{sup 2+} also varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range (58.4%), fast switching speed (bleaching/coloration times are 1.8/4.2 s, respectively) and excellent durability (30% decrease after 2000 cycles). The improved performance was owed to the synergy of large NiO film specific surface area and porous morphology, as well as Al doping stifled the formation of Ni{sup 3+} making bleached state more pure. This LDHs precursor pyrolytic method is simple, low-cost and environmental benign and is feasible for the preparation of NiO:Al and other Al-doped oxide thin film. - Graphical abstract: The ratio of Ni{sup 3+}/Ni{sup 2+} varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range, fast switching speed and excellent durability. Display Omitted.

  20. Thin film ionic conductors based on cerium oxide

    International Nuclear Information System (INIS)

    Haridoss, P.; Hellstrom, E.; Garzon, F.H.; Brown, D.R.; Hawley, M.

    1994-01-01

    Fluorite and perovskite structure cerium oxide based ceramics are a class of materials that may exhibit good oxygen ion and/or protonic conductivity. The authors have successfully deposited thin films of these materials on a variety of substrates. Interesting orientation relationships were noticed between cerium oxide films and strontium titanate bi-crystal substrates. Near lattice site coincidence theory has been used to study these relationships

  1. Valence control of cobalt oxide thin films by annealing atmosphere

    International Nuclear Information System (INIS)

    Wang Shijing; Zhang Boping; Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping

    2011-01-01

    The cobalt oxide (CoO and Co 3 O 4 ) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH 3 OCH 2 CH 2 OH and Co(NO 3 ) 2 .6H 2 O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co 3 O 4 thin film was obtained by annealing in air at 300-600, and N 2 at 300, and transferred to CoO thin film by raising annealing temperature in N 2 . The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  2. Measurement of the surface charge accumulation using anodic aluminum oxide(AAO) structure in an inductively coupled plasma

    Science.gov (United States)

    Park, Ji-Hwan; Oh, Seung-Ju; Lee, Hyo-Chang; Kim, Yu-Sin; Kim, Young-Cheol; Kim, June Young; Ha, Chang-Seoung; Kwon, Soon-Ho; Lee, Jung-Joong; Chung, Chin-Wook

    2014-10-01

    As the critical dimension of the nano-device shrinks, an undesired etch profile occurs during plasma etch process. One of the reasons is the local electric field due to the surface charge accumulation. To demonstrate the surface charge accumulation, an anodic aluminum oxide (AAO) membrane which has high aspect ratio is used. The potential difference between top electrode and bottom electrode in an anodic aluminum oxide contact structure is measured during inductively coupled plasma exposure. The voltage difference is changed with external discharge conditions, such as gas pressure, input power, and gas species and the result is analyzed with the measured plasma parameters.

  3. Impedance measurements on oxide films on aluminium obtained by pulsed tensions

    Energy Technology Data Exchange (ETDEWEB)

    Belmokre, K. [Lab. of Applied Chemical, Dept. of Chemie, Skikda University, BP 26 - 21000 Skikda (Algeria); Azzouz, N. [Dept. of Industrial Chemie, Jijel University Center, 18000 Jijel (Algeria); Hannani, A. [Lab. Electrochem. Corros. Institute of Chemical USTHB Alger (Algeria); Pagetti, J. [Lab. LCMI, Franche-Comte - University UFR Sciences and Technical 16, Gray street - 25030 Besancon Cedex (France)

    2003-01-01

    We have performed this study on oxide films sealed or not in boiling water. The films are first obtained on type 1050 A aluminium substrate by pulsed tensions anodizing technique, in a sulfuric acid solution. Afterwards the, Electrochemical Impedance Spectroscopy (EIS) is employed to appreciate the films behaviour in a neutral solution of 3.5% K{sub 2}SO{sub 4}, in which the interface processes interest only the ageing phenomenon of the oxide films and not their corrosion. We have also attempted a correlation between pulse parameters of anodization and the electrical parameters characterizing these films. The sealing influence on ageing has been studied as well. For all films, ageing is appreciated using impedance diagrams evolution versus time. The results show: - the existence of two capacitive loops confirming the presence of two oxide layers characteristic of oxide films obtained in a sulfuric acid medium. The first loop, at high frequencies, is related to the external porous layer and the second one, at lower frequencies, is related to the internal barrier layer. - the thickness of the barrier layer varies between 25 and 40 nm in relation with the electrical pulse parameters. - the sealing acts favorably against anodic oxide films ageing. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

  4. Characterizations of photoconductivity of graphene oxide thin films

    Directory of Open Access Journals (Sweden)

    Shiang-Kuo Chang-Jian

    2012-06-01

    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  5. Synergistic effect of aluminum and ionizing radiation upon ultrastructure, oxidative stress and apoptotic alterations in Paneth cells of rat intestine.

    Science.gov (United States)

    Eltahawy, N A; Elsonbaty, S M; Abunour, S; Zahran, W E

    2017-03-01

    Environmental and occupational exposure to aluminum along with ionizing radiation results in serious health problems. This study was planned to investigate the impact of oxidative stress provoked by exposure to ionizing radiation with aluminum administration upon cellular ultra structure and apoptotic changes in Paneth cells of rat small intestine . Animals received daily aluminum chloride by gastric gavage at a dose 0.5 mg/Kg BW for 4 weeks. Whole body gamma irradiation was applied at a dose 2 Gy/week up to 8 Gy. Ileum malondialdehyde, advanced oxidative protein products, protein carbonyl and tumor necrosis factor-alpha were assessed as biomarkers of lipid peroxidation, protein oxidation and inflammation respectively along with superoxide dismutase, catalase, and glutathione peroxidase activities as enzymatic antioxidants. Moreover, analyses of cell cycle division and apoptotic changes were evaluated by flow cytometry. Intestinal cellular ultra structure was investigated using transmission electron microscope.Oxidative and inflammatory stresses assessment in the ileum of rats revealed that aluminum and ionizing radiation exposures exhibited a significant effect upon the increase in oxidative stress biomarkers along with the inflammatory marker tumor necrosis factor-α accompanied by a significant decreases in the antioxidant enzyme activities. Flow cytometric analyses showed significant alterations in the percentage of cells during cell cycle division phases along with significant increase in apoptotic cells. Ultra structurally, intestinal cellular alterations with marked injury in Paneth cells at the sites of bacterial translocation in the crypt of lumens were recorded. The results of this study have clearly showed that aluminum and ionizing radiation exposures induced apoptosis with oxidative and inflammatory disturbance in the Paneth cells of rat intestine, which appeared to play a major role in the pathogenesis of cellular damage. Furthermore, the

  6. Preparation of tris(8-hydroxyquinolinato)aluminum thin films by sputtering deposition using powder and pressed powder targets

    Science.gov (United States)

    Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyu, Yoshihito; Ihara, Takeshi; Tanaka, Rei; Suda, Yoshiaki

    2017-06-01

    Tris(8-hydroxyquinolinato)aluminum (Alq3) thin films, for use in organic electroluminescence displays, were prepared by a sputtering deposition method using powder and pressed powder targets. Experimental results suggest that Alq3 thin films can be prepared using powder and pressed powder targets, although the films were amorphous. The surface color of the target after deposition became dark brown, and the Fourier transform infrared spectroscopy spectrum changed when using a pressed powder target. The deposition rate of the film using a powder target was higher than that using a pressed powder target. That may be because the electron and ion densities of the plasma generated using the powder target are higher than those when using pressed powder targets under the same deposition conditions. The properties of a thin film prepared using a powder target were almost the same as those of a film prepared using a pressed powder target.

  7. Electrodeposited porous and amorphous copper oxide film for application in supercapacitor

    Energy Technology Data Exchange (ETDEWEB)

    Patake, V.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, (M.S.) (India); Joshi, S.S. [Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of); Lokhande, C.D. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, (M.S.) (India); Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of)], E-mail: l_chandrakant@yahoo.com; Joo, Oh-Shim [Clean Energy Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650 (Korea, Republic of)], E-mail: joocat@kist.rre.kr

    2009-03-15

    In present study, the porous amorphous copper oxide thin films have been deposited from alkaline sulphate bath. The cathodic electrodeposition method was employed to deposit copper oxide film at room temperature on stainless steel substrate. Their structural and surface morphological properties were investigated by means of X-ray diffraction (XRD) and scanning electron micrograph (SEM), respectively. To propose this as a new material for possible application in the supercapacitor, its electrochemical properties have been studied in aqueous 1 M Na{sub 2}SO{sub 4} electrolyte using cyclic voltammetry. The structural analysis from XRD pattern showed the formation of amorphous copper oxide film on the substrate. The surface morphological studies from scanning electron micrographs revealed the formation of porous cauliflower-like copper oxide film. The cyclic voltammetric curves showed symmetric nature and increase in capacitance with increase in film thickness. The maximum specific capacitance of 36 F g{sup -1} was exhibited for the 0.6959 mg cm{sup -2} film thickness. This shows that low-cost copper oxide electrode will be a potential application in supercapacitor.

  8. Thermally Annealed Iron (Oxide) Thin Film on an Alumina Barrier Layer, by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

    2013-09-06

    Herein we show characterization of an Fe thin film on Al_2O_3 after thermal annealing under H_2 using Al Ka X-rays. The XPS survey spectrum, narrow Fe 2p scan, and valence band regions are presented. The survey spectrum shows aluminum signals due to exposure of the underlying Al_2O_3 film during Fe nanoparticle formation.

  9. Characterization of zirconium alloy oxidation films by alternating current impedance

    International Nuclear Information System (INIS)

    Rosecrans, P.M.

    1984-01-01

    Kinetics of zirconium alloy oxidation are highly nonlinear. The results of electrochemical measurements and electron microscopy support the existence of porosity in oxide films formed on zirconium alloys in high temperature aqueous environments. Analytical treatment is presented relating oxidation kinetics to the thickness and distribution of nonporous elements within the oxide. This analysis illustrates that both the level and distribution of porosity within the oxide factor into oxidation kinetics. The barrier layer model can provide a basis for predicting the effect of environmental changes on oxidation rate. In addition, it demonstrates the need for further research into porosity generation mechanisms in oxide films

  10. Characterization of zirconium alloy oxidation films by alternating current impedance

    International Nuclear Information System (INIS)

    Rosecrans, P.M.

    1983-11-01

    Kinetics of zirocnium alloy oxidation are highly nonlinear. The results of electrochemical measurements and electron microscopy support the existence of porosity in oxide films formed on zirconium alloys in high temperature aqueous environments. Analytical treatment is presented relating oxidation kinetics to the thickness and distribution of nonporous elements within the oxide. This analysis illustrates that both the level and distribution of porosity within the oxide factor into oxidation kinetics. The barrier layer model can provide a basis for predicting the effect of environmental changes on oxidation rate. In addition, it demonstrates the need for further research into porosity generation mechanisms in oxide films

  11. Photoconductivity of Germanium Nanowire Arrays Incorporated in Anodic Aluminum Oxide

    International Nuclear Information System (INIS)

    Polyakov, B; Prikulis, J; Grigorjeva, L; Millers, D; Daly, B; Holmes, J D; Erts, D

    2007-01-01

    Photoconductivity of germanium nanowire arrays of 50 and 100 nm diameter incorporated into Anodic Aluminum Oxide (AAO) membranes illuminated with visible light is investigated. Photocurrent response to excitation radiation with time constants faster than 10 -4 s were governed by absorption of incident light by nanowires, while photokinetics with time constants of the order of 10 -3 s originates from the photoluminescence of the AAO matrix. Possible applications of nanowire arrays inside AAO as photoresistors are discussed

  12. Template synthesis of indium nanowires using anodic aluminum oxide membranes.

    Science.gov (United States)

    Chen, Feng; Kitai, Adrian H

    2008-09-01

    Indium nanowires with diameters approximately 300 nm have been synthesized by a hydraulic pressure technique using anodic aluminum oxide (AAO) templates. The indium melt is injected into the AAO template and solidified to form nanostructures. The nanowires are dense, continuous and uniformly run through the entire approximately 60 microm thickness of the AAO template. X-ray diffraction (XRD) reveals that the nanowires are polycrystalline with a preferred orientation. SEM is performed to characterize the morphology of the nanowires.

  13. On the mechanism of self-deceleration of the thin oxide film growth

    CERN Document Server

    Mukhambetov, D G

    2002-01-01

    The objective of this work was to investigate the kinetics of the two-phase oxide film growth on the alpha-Fe surface at temperatures of 650-750 K. We experimentally determined that the film thickness (h)-time oxidation (tau) relationship in the range denoted above is a logarithmic function, whereas Cabrera and Mott's theory gives a square law of film growth. In our work, analytical treatment of experimental data was made based on this theory, but we propose that self-deceleration of the film growth is caused not by attenuation of the electric intensity in the film because of an increase of h but by the shielding influence of the space charge of diffusing ions and electrons in that oxide film. With that purpose in view, the Debye shielding distance for plasma substance state in the oxide film was taken into consideration. The logarithmic law of oxide film growth was derived. Estimated calculations of this law's parameters were made that quantitatively correspond with literature data. The results obtained were...

  14. Bloodcompatibility improvement of titanium oxide film modified by phosphorus ion implantation

    International Nuclear Information System (INIS)

    Yang, P.; Leng, Y.X.; Zhao, A.S.; Zhou, H.F.; Xu, L.X.; Hong, S.; Huang, N.

    2006-01-01

    Our recent investigation suggested that Ti-O thin film could be a newly developed antithrombotic material and its thromboresistance could be related to its physical properties of wide gap semiconductor. In this work, titanium oxide film was modified by phosphorus ion implantation and succeeding vacuum annealing. RBS were used to investigate phosphorus distribution profile. Contact angle test results show that phosphorus-doped titanium oxide film becomes more hydrophilic after higher temperature annealing, while its electric conductivity increases. Antithrombotic property of phosphorus-doped titanium oxide thin films was examined by clotting time and platelet adhesion tests. The results suggest that phosphorus doping is an effective way to improve the bloodcompatibility of titanium oxide film, and it is related to the changes of electron structure and surface properties caused by phosphorus doping

  15. Thin film removal mechanisms in ns-laser processing of photovoltaic materials

    International Nuclear Information System (INIS)

    Bovatsek, J.; Tamhankar, A.; Patel, R.S.; Bulgakova, N.M.; Bonse, J.

    2010-01-01

    The removal of thin films widely used in photovoltaics (amorphous silicon, tin oxide, zinc oxide, aluminum, and molybdenum) is studied experimentally using multi-kHz Q-switched solid-state lasers at 532 nm and 1064 nm wavelengths. The processing ('scribing') is performed through the film-supporting glass plate at scribing speeds of the order of m/s. The dependence of the film removal threshold on the laser pulse duration (8 ns to 40 ns) is investigated and the results are complemented by a multi-layer thermal model used for numerical simulations of the laser-induced spatio-temporal temperature field within the samples. Possible film removal mechanisms are discussed upon consideration of optical, geometrical, thermal and mechanical properties of the layers.

  16. Laser-Induced, Local Oxidation of Copper Nanoparticle Films During Raman Measurements

    Science.gov (United States)

    Hight Walker, Angela R.; Cheng, Guangjun; Calizo, Irene

    2011-03-01

    The optical properties of gold and silver nanoparticles and their films have been thoroughly investigated as surface enhanced Raman scattering (SERS) substrates and chemical reaction promoters. Similar to gold and silver nanoparticles, copper nanoparticles exhibit distinct plasmon absorptions in the visible region. The work on copper nanoparticles and their films is limited due to their oxidization in air. However, their high reactivity actually provides an opportunity to exploit the laser-induced thermal effect and chemical reactions of these nanoparticles. Here, we present our investigation of the local oxidation of a copper nanoparticle film induced by a visible laser source during Raman spectroscopic measurements. The copper nanoparticle film is prepared by drop-casting chemically synthesized copper colloid onto silicon oxide/silicon substrate. The local oxidation induced by visible lasers in Raman spectroscopy is monitored with the distinct scattering peaks for copper oxides. Optical microscopy and scanning electron microscopy have been used to characterize the laser-induced morphological changes in the film. The results of this oxidation process with different excitation wavelengths and different laser powers will be presented.

  17. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  18. Aluminum nitride insulating films for MOSFET devices

    Science.gov (United States)

    Lewicki, G. W.; Maserjian, J.

    1972-01-01

    Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Electrical properties of aluminum nitrides are analyzed and specific use with field effect transistors is defined. Operational limits of field effect transistors are developed.

  19. In-situ measurement of the electrical conductivity of aluminum oxide in HFIR

    Energy Technology Data Exchange (ETDEWEB)

    Zinkle, S.J.; White, D.P.; Snead, L.L. [Oak Ridge National Lab., TN (United States)] [and others

    1996-10-01

    A collaborative DOE/Monbusho irradiation experiment has been completed which measured the in-situ electrical resistivity of 12 different grades of aluminum oxide during HFIR neutron irradiation at 450{degrees}C. No evidence for bulk RIED was observed following irradiation to a maximum dose of 3 dpa with an applied dc electric field of 200 V/mm.

  20. Direct growth of large grain polycrystalline silicon films on aluminum-induced crystallization seed layer using hot-wire chemical vapor deposition

    International Nuclear Information System (INIS)

    Wu, Bing-Rui; Lo, Shih-Yung; Wuu, Dong-Sing; Ou, Sin-Liang; Mao, Hsin-Yuan; Wang, Jui-Hao; Horng, Ray-Hua

    2012-01-01

    Large grain polycrystalline silicon (poly-Si) films on glass substrates have been deposited on an aluminum-induced crystallization (AIC) seed layer using hot-wire chemical vapor deposition (HWCVD). A poly-Si seed layer was first formed by the AIC process and a thicker poly-Si film was subsequently deposited upon the seed layer using HWCVD. The effects of AIC annealing parameters on the structural and electrical properties of the poly-Si seed layers were characterized by Raman scattering spectroscopy, field-emission scanning electron microscopy, and Hall measurements. It was found that the crystallinity of seed layer was enhanced with increasing the annealing duration and temperature. The poly-Si seed layer formed at optimum annealing parameters can reach a grain size of 700 nm, hole concentration of 3.5 × 10 18 cm −3 , and Hall mobility of 22 cm 2 /Vs. After forming the seed layer, poly-Si films with good crystalline quality and high growth rate (> 1 nm/s) can be obtained using HWCVD. These results indicated that the HWCVD-deposited poly-Si film on an AIC seed layer could be a promising candidate for thin-film Si photovoltaic applications. - Highlights: ►Poly-Si seed layers are formed by aluminum-induced crystallization (AIC) process. ►Poly-Si on AIC seed layers are prepared by hot-wire chemical vapor deposition. ►AIC process parameters affect structural properties of poly-Si films. ►Increasing the annealing duration and temperature increases the film crystallinity.

  1. Effect of Processing Parameters on Pore Structure and Thickness of Anodic Aluminum Oxide (AAO) Tubular Membranes

    OpenAIRE

    Belwalkar, A.; Grasing, E.; Van Geertruyden, W.; Huang, Z.; Misiolek, W.Z.

    2008-01-01

    Nanoporous anodic aluminum oxide (AAO) tubular membranes were fabricated from aluminum alloy tubes in sulfuric and oxalic acid electrolytes using a two-step anodization process. The membranes were investigated for characteristics such as pore size, interpore distance and thickness by varying applied voltage and electrolyte concentration. Morphology of the membranes was examined using light optical and scanning electron microscopy and characterized using ImageJ software. Results showed that me...

  2. Aluminum-based metal-air batteries

    Science.gov (United States)

    Friesen, Cody A.; Martinez, Jose Antonio Bautista

    2016-01-12

    Provided in one embodiment is an electrochemical cell, comprising: (i) a plurality of electrodes, comprising a fuel electrode that comprises aluminum and an air electrode that absorbs gaseous oxygen, the electrodes being operable in a discharge mode wherein the aluminum is oxidized at the fuel electrode and oxygen is reduced at the air electrode, and (ii) an ionically conductive medium, comprising an organic solvent; wherein during non-use of the cell, the organic solvent promotes formation of a protective interface between the aluminum of the fuel electrode and the ionically conductive medium, and wherein at an onset of the discharge mode, at least some of the protective interface is removed from the aluminum to thereafter permit oxidation of the aluminum during the discharge mode.

  3. Effect of mass density on surface morphology of electrodeposited manganese oxide films

    Science.gov (United States)

    Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder

    2018-05-01

    This work focus on high surface area morphology of manganese oxide films which are currently required for electrochemical capacitor electrode to enhance their performance. Electrodeposition of manganese oxide films was carried out using Chronoamperometry for different deposition time ranging from 30 to 120 sec. Cronoamperomertic I-T integrated data have been used to analyze active mass of all electrodeposited films. Morphological study of the deposited films with different mass was carried out through scanning electron microscopy. Film deposited for 30 sec time show highest porous morphology than others. Manganese oxide films with high porosity are suitable for electrochemical capacitor electrode.

  4. Interfacial characteristics of polyethylene terephthalate-based piezoelectric multi-layer films

    International Nuclear Information System (INIS)

    Liu, Z.H.; Pan, C.T.; Chen, Y.C.; Liang, P.H.

    2013-01-01

    The study examines the deformation between interfaces and the adhesion mechanism of multi-layer flexible electronic composites. Indium tin oxide (ITO), aluminum (Al), and zinc oxide (ZnO) were deposited on a polyethylene terephthalate (PET) substrate using radio frequency magnetron sputtering at room temperature to form flexible structures (e.g., ITO/PET, Al/PET, ZnO/ITO/PET, and ZnO/Al/PET) for piezoelectric transducers. ITO and Al films are used as the conductive layers. A ZnO thin film shows a high (002) c-axis preferred orientation at 2θ = 34.45° and excellent piezoelectric properties. Nanoscratching and nano-indention testing were conducted to analyze the adhesion following periodic mechanical stress. Additionally, two Berkovich and conical probes with a curvature radius of 40 nm and 10 μm are examined for the scratching test. A 4-point probe is used to measure the conductive properties. The plastic deformation between the ductile Al film and PET substrate is observed using scanning electron microscopy to examine the chip formation on the ITO/PET. Delamination between the ZnO and Al/PET substrate was not observed. The result suggests that ZnO film has excellent adhesion with Al/PET compared to ITO/PET. - Highlights: ► Interfaces and adhesion mechanism of multi-layer flexible electronic composites ► Polyethylene terephthalate (PET) based flexible structures ► Nano-scratching and nano-indention tests were used to analyze adhesion. ► Using two various probes of Berkovich and conical ► Piezoelectric zinc oxide film has excellent adhesion with aluminum/PET

  5. The electrochemical properties and mechanism of formation of anodic oxide films on Mg-Al alloys

    International Nuclear Information System (INIS)

    Kim, Seong Jong; Okido, Masazumi

    2003-01-01

    The electronchemical properties and the mechanism of formation of anodic oxide films on Mg alloys containing 0-15 mass% Al, when anodized in NaOH solution, were investigated by focusing on the effects of anodizing potential, Al content, and anodizing time. The intensity ratio of Mg(OH) 2 in the XRD analysis decreased with increasing applied potential, while that of MgO increased. Mg(OH) 2 was barely detected at 80 V, while MgO was readily detected. The anti-corrosion properties of anodized specimens at each constant potential were better than those of non-anodized specimens. The specimen anodized at an applied potential of 3 V had the best anti-corrosion property. The intensity ratio of the β phase increased with aluminum content in Mg-Al alloys. During anodizing, the active dissolution reaction occurred preferentially in β phase until about 4 min, and then the current density increased gradually until 7 min. The dissolution reaction progressed in α phase, which had a lower Al content. In the anodic polarization test in 0.017 mol·dm -3 NaCl and 0.1 mol·dm -3 Na 2 SO 4 at 298 K, the current density of Mg-15 mass% Al alloy anodized for 10 min increased, since the anodic film that forms on the α phase is a non-compacted film. The anodic film on the α phase at 30 min was a compact film as compared with that at 10 min

  6. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin films have been investigated as protective coatings for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å h-l. Etching in liquids...... with pH values in the range from pH 2 to 11 have generally given etch rates below 0.04 Å h-l. On the other hand patterning is possible in hydrofluoric acid. Further, the passivation behaviour of amorphous tantalum oxide and polycrystalline Ta2O5 is different in buffered hydrofluoric acid. By ex situ...... annealing O2 in the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallization lines are hard to cover. Sputtered tantalum oxide...

  7. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin-films have been investigated as protective coating for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å/h. Etching in liquids with p......H values in the range from pH 2-11 have generally given etch rates below 0.04 Å/h. On the other hand patterning is possible in hydrofluoric acid. Further, the passivation behaviour of amorphous tantalum oxide and polycrystalline Ta2O5 is different in buffered hydrofluoric acid. By ex-situ annealing in O2...... the residual thin-film stress can be altered from compressive to tensile and annealing at 450°C for 30 minutes gives a stress-free film. The step coverage of the sputter deposited amorphous tantalum oxide is reasonable, but metallisation lines are hard to cover. Sputtered tantalum oxide exhibits high...

  8. Growth and surface characterization of sputter-deposited molybdenum oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ramana, Chintalapalle V.; Atuchin, Victor V.; Kesler, V. G.; Kochubey, V. A.; Pokrovsky, L. D.; Shutthanandan, V.; Becker, U.; Ewing, Rodney C.

    2007-04-15

    Molybdenum oxide thin films were produced by magnetron sputtering using a molybdenum (Mo) target. The sputtering was performed in a reactive atmosphere of argon-oxygen gas mixture under varying conditions of substrate temperature (Ts) and oxygen partial pressure (pO2). The effect of Ts and pO2 on the growth and microstructure of molybdenum oxide films was examined in detail using reflection high-energy electron diffraction (RHEED), Rutherford backscattering spectrometry (RBS), energy dispersive X-ray spectrometry (EDS), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) measurements. The analyses indicate that the effect of Ts and pO2 on the microstructure and phase of the grown molybdenum oxide thin films is remarkable. RHEED and RBS results indicate that the films grown at 445 *C under 62.3% O2 pressure were stoichiometric and polycrystalline MoO3. Films grown at lower pO2 were nonstoichiometric MoOx films with the presence of secondary phase. The microstructure of the grown Mo oxide films is discussed and conditions were optimized to produce phase pure, stoichiometric, and highly textured polycrystalline MoO3 films.

  9. Dewetting behavior of Au films on porous substrates

    International Nuclear Information System (INIS)

    Zhao Xiaowei; Lee, Ung-Ju; Lee, Kun-Hong

    2010-01-01

    Understanding the stability of thin films and their spontaneous pattern formation upon dewetting is essential to a host of physical phenomena. In this paper, we study the dewetting phenomena of Au thin films deposited on anodic aluminum oxide (AAO) membranes to analyze the stability of the metal film on porous substrates. AAO membranes, as-sputtered and dewetted Au films are all characterized by scanning electronic microscopy and X-ray diffraction. We found that both the roughness of AAO surface and modification of AAO pores exhibit remarkable influences on the dewetting behavior of Au films. The observed dewetting phenomena are explained from an energetic point of view since dewetting is a process of minimization of the system free energy.

  10. Photoconductivity of reduced graphene oxide and graphene oxide composite films

    International Nuclear Information System (INIS)

    Liang, Haifeng; Ren, Wen; Su, Junhong; Cai, Changlong

    2012-01-01

    A photoconductive device was fabricated by patterning magnetron sputtered Pt/Ti electrode and Reduced Graphene Oxide (RGO)/Graphene Oxide (GO) composite films with a sensitive area of 10 × 20 mm 2 . The surface morphology of as-deposited GO films was observed by scanning electronic microscopy, optical microscopy and atomic force microscopy, respectively. The absorption properties and chemical structure of RGO/GO composite films were obtained using a spectrophotometer and an X-ray photoelectron spectroscopy. The photoconductive properties of the system were characterized under white light irradiation with varied output power and biased voltage. The results show that the resistance decreased from 210 kΩ to 11.5 kΩ as the irradiation power increased from 0.0008 mW to 625 mW. The calculated responsiveness of white light reached 0.53 × 10 −3 A/W. Furthermore, the device presents a high photo-conductivity response and displays a photovoltaic response with an open circuit voltage from 0.017 V to 0.014 V with irradiation power. The sources of charge are attributed to efficient excitation dissociation at the interface of the RGO/GO composite film, coupled with cross-surface charge percolation.

  11. Ultrathin copper aluminum and nickel aluminide protective oxidation studied with an x-ray photoelectron spectrometer

    Science.gov (United States)

    Moore, J. F.; McCann, M. P.; Pellin, M. J.; Zinovev, A.; Hryn, J. N.

    2003-09-01

    Oxidation in a regime where diffusion is rapid and pressures are low is addressed. Kinetic effects under these conditions are minimized and a protective oxide film of near-equilibrium composition that is a few nanometers thick may form. Ultrathin oxides have great potential for addressing the corrosion resistance of metals, since they do not always suffer stress-induced cracking upon thermal cycling, and can be reformed under high temperature, oxidizing environments. Ultrathin oxide films are also preferable to those on a thick oxide scale for electrochemical applications due to their electrical properties. To study the growth of these oxide films, we have developed a high signal x-ray photoelectron spectrometer. The instrument can measure the near-surface composition during growth under oxygen partial pressures of up to 10-5 mbar and surface temperatures up to 1300 K. Under these conditions, films grow to a level of 3 nm in 1 h. Experiments with Cu-Al alloys show rapid segregation of Al upon oxygen exposure at 875 K, whereas exposures at lower temperatures result in a mixed oxide. With a Ni-Al intermetallic, higher temperatures were needed to preferentially segregate Al. Thermal cycling followed by exposure to chlorine in the same instrument is used as a measure of the degree of corrosion resistance of the oxides in question.

  12. Secondary electron emission influenced by oxidation on the aluminum surface: the roles of the chemisorbed oxygen and the oxide layer

    Science.gov (United States)

    Li, Jiangtao; Hoekstra, Bart; Wang, Zhen-Bin; Qiu, Jie; Pu, Yi-Kang

    2018-04-01

    A relationship between the apparent secondary electron yield ({γ }{{se}}) and the oxygen coverage/oxide layer thickness on an aluminum cathode is obtained in an experiment under a controlled environment. The apparent secondary electron yield ({γ }{{se}}) is deduced from the breakdown voltage between two parallel plate electrodes in a 360 mTorr argon environment using a simple Townsend breakdown model with the assumption that the variation of the apparent secondary electron yield is dominated by the variation of the argon ion induced processes. The oxygen coverage/oxide layer thickness on the aluminum cathode is measured by a semi in situ x-ray photoemission spectroscopy equipment which is directly attached to the discharge chamber. It is found that three phases exist: (1) in the monomonolayer regime, as the oxygen coverage increases from 0 to 0.3, {γ }{{se}} decreases by nearly 40 % , (2) as the oxygen coverage increases from 0.3 to 1, {γ }{{se}} keeps nearly constant, (3) as the oxide layer thickness increases from about 0.3 nm to about 1.1 nm, {γ }{{se}} increases by 150 % . We propose that, in the submonolayer regime, the chemisorbed oxygen on the aluminum surface causes the decrease of {γ }{{se}} by creating a local potential barrier, which reduces the Auger neutralization rate and the energy gained by the Auger electrons. In the multilayer regime, as the oxide layer grows in thickness, there are three proposed mechanisms which cause the increase of {γ }{{se}}: (1) the work function decreases; (2) resonance neutralization and Auger de-excitation may exist. This is served as another channel for secondary electron production; (3) the kinetic energy of Auger electrons is increased on average, leading to a higher probability for electrons to overcome the surface potential barrier.

  13. Porous Anodic Aluminum Oxide with Serrated Nanochannels

    Science.gov (United States)

    Li, Dongdong; Zhao, Liang; Lu, Jia G.

    2010-03-01

    Self-assembled nanoporous anodic aluminum oxide (AAO) membrane with straight channels has long been an important tool in synthesizing highly ordered and vertically aligned quasi-1D nanostructures for various applications. Recently shape-selective nanomaterials have been achieved using AAO as a template. It is envisioned that nanowires with multi-branches will significantly increase the active functional sites for applications as sensors, catalysts, chemical cells, etc. Here AAO membranes with serrated nanochannels have been successfully fabricated via a two-step annodization method. The serrated channels with periodic intervals are aligned at an angle of ˜25^circ along the stem channels. The formation of the serrated channels is attributed to the evolution of oxygen gas bubbles and the resulted plastic deformation in oxide membrane. In order to reveal the inside channel structure, Platinum are electrodeposited into the AAO template. The as-synthesized serrated Pt nanowires demonstrate a superior electrocatalytic activity. This is attributed to the enhanced electric field strength around serrated tips as shown in the electric field simulation by COMOSL. Moreover, hierarchical serrated/straight hybrid structures can be constructed using this simple and novel self assembly technique.

  14. Thermal transport properties of polycrystalline tin-doped indium oxide films

    International Nuclear Information System (INIS)

    Ashida, Toru; Miyamura, Amica; Oka, Nobuto; Sato, Yasushi; Shigesato, Yuzo; Yagi, Takashi; Taketoshi, Naoyuki; Baba, Tetsuya

    2009-01-01

    Thermal diffusivity of polycrystalline tin-doped indium oxide (ITO) films with a thickness of 200 nm has been characterized quantitatively by subnanosecond laser pulse irradiation and thermoreflectance measurement. ITO films sandwiched by molybdenum (Mo) films were prepared on a fused silica substrate by dc magnetron sputtering using an oxide ceramic ITO target (90 wt %In 2 O 3 and 10 wt %SnO 2 ). The resistivity and carrier density of the ITO films ranged from 2.9x10 -4 to 3.2x10 -3 Ω cm and from 1.9x10 20 to 1.2x10 21 cm -3 , respectively. The thermal diffusivity of the ITO films was (1.5-2.2)x10 -6 m 2 /s, depending on the electrical conductivity. The thermal conductivity carried by free electrons was estimated using the Wiedemann-Franz law. The phonon contribution to the heat transfer in ITO films with various resistivities was found to be almost constant (λ ph =3.95 W/m K), which was about twice that for amorphous indium zinc oxide films

  15. Valence control of cobalt oxide thin films by annealing atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Wang Shijing [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhang Boping, E-mail: bpzhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China)

    2011-02-01

    The cobalt oxide (CoO and Co{sub 3}O{sub 4}) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH{sub 3}OCH{sub 2}CH{sub 2}OH and Co(NO{sub 3}){sub 2}.6H{sub 2}O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co{sub 3}O{sub 4} thin film was obtained by annealing in air at 300-600, and N{sub 2} at 300, and transferred to CoO thin film by raising annealing temperature in N{sub 2}. The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  16. Spark counting technique of alpha tracks on an aluminium oxide film

    International Nuclear Information System (INIS)

    Morishima, Hiroshige; Koga, Taeko; Niwa, Takeo; Kawai, Hiroshi

    1984-01-01

    We have tried to use aluminium oxide film as a neutron detector film with a spark counter for neutron monitoring in the mixed field of neutron and gamma-rays near a reactor. The merits of this method are that (1) aluminium oxide is good electric insulator, (2) any desired thickness of the film can be prepared, (3) chemical etching of the thin film can be dispensed with. The relation between spark counts and numbers of alpha-particles which entered the aluminium oxide film 1 μm thick was linear in the range of 10 5 -10 7 alpha-particles. The sensitivity(ratio of the spark counts to irradiated numbers of alpha-particles) was approximately 10 -3 . (author)

  17. Intrinsic stress of bismuth oxide thin films: effect of vapour chopping and air ageing

    International Nuclear Information System (INIS)

    Patil, R B; Puri, R K; Puri, V

    2008-01-01

    Bismuth oxide thin films of thickness 1000 A 0 have been prepared by thermal oxidation (in air) of vacuum evaporated bismuth thin films (on glass substrate) at different oxidation temperatures and duration. Both the vapour chopped and nonchopped bismuth oxide thin films showed polycrystalline and polymorphic structure. The monoclinic bismuth oxide was found to be predominant in both the cases. The effect of vapour chopping and air exposure for 40 days on the intrinsic stress of bismuth oxide thin films has been studied. The vapour chopped films showed low (3.92 - 4.80 x 10 9 N/m 2 ) intrinsic stress than those of nonchopped bismuth oxide thin films (5.77 - 6.74 x 10 9 N/m 2 ). Intrinsic stress was found to increase due to air ageing. The effect of air ageing on the vapour chopped films was found low. The vapour chopped films showed higher packing density. Higher the packing density, lower the film will age. The process of chopping vapour flow creates films with less inhomogenety i.e. a low concentration of flaws and non-planar defects which results in lower intrinsic stress

  18. Deposition and characterization of TaAIN thin films by reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Oliveira, G.B.; Fernandez, D.R.; Fontes Junior, A.S.; Felix, L.C.; Tentardini, E.K.; Silva Junior, A.H. da

    2016-01-01

    Phase stability, oxidation resistance and great mechanical properties are the main objectives when synthesizing protective coatings. The tantalum nitride (TaN) has aroused interest because of its high temperature stability, chemical inertness and thermal conductivity. However, it has a low hardness value when compared to other coatings. Researches has shown that one way to improvements in the properties of a thin film is by adding other elements in the deposition process. Therefore, the objective of this study was to deposit thin films of TaAlN by magnetron sputtering, changing the aluminum concentration of 2, 5, 7, to 14%. Then the coatings were characterized by EDS, RBS, GIXRD and nanohardness. In this study was found that the aluminum deposited did not change the oxidation resistance of the coating, and the highest value of hardness was 28 GPa for the sample with 14 at.%. (author)

  19. Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

    NARCIS (Netherlands)

    Ponomarev, M.; Verheijen, M.A.; Keuning, W.; Sanden, van de M.C.M.; Creatore, M.

    2012-01-01

    Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO:Al layers by focusing on the control

  20. Long-Wave Infrared (LWIR) Molecular Laser-Induced Breakdown Spectroscopy (LIBS) Emissions of Thin Solid Explosive Powder Films Deposited on Aluminum Substrates.

    Science.gov (United States)

    Yang, Clayton S-C; Jin, Feng; Trivedi, Sudhir B; Brown, Ei E; Hommerich, Uwe; Tripathi, Ashish; Samuels, Alan C

    2017-04-01

    Thin solid films made of high nitro (NO 2 )/nitrate (NO 3 ) content explosives were deposited on sand-blasted aluminum substrates and then studied using a mercury-cadmium-telluride (MCT) linear array detection system that is capable of rapidly capturing a broad spectrum of atomic and molecular laser-induced breakdown spectroscopy (LIBS) emissions in the long-wave infrared region (LWIR; ∼5.6-10 µm). Despite the similarities of their chemical compositions and structures, thin films of three commonly used explosives (RDX, HMX, and PETN) studied in this work can be rapidly identified in the ambient air by their molecular LIBS emission signatures in the LWIR region. A preliminary assessment of the detection limit for a thin film of RDX on aluminum appears to be much lower than 60 µg/cm 2 . This LWIR LIBS setup is capable of rapidly probing and charactering samples without the need for elaborate sample preparation and also offers the possibility of a simultaneous ultraviolet visible and LWIR LIBS measurement.

  1. Significance of novel bioinorganic anodic aluminum oxide nanoscaffolds for promoting cellular response

    OpenAIRE

    Poinern, Gérrard Eddy Jai; Shackleton, Robert; Mamun, Shariful Islam; Fawcett, Derek

    2011-01-01

    Gérrard Eddy Jai Poinern, Robert Shackleton, Shariful Islam Mamun, Derek FawcettMurdoch Applied Nanotechnology Research Group, Department of Physics, Energy Studies and Nanotechnology, School of Engineering and Energy, Murdoch University, Murdoch, Western Australia, AustraliaAbstract: Tissue engineering is a multidisciplinary field that can directly benefit from the many advancements in nanotechnology and nanoscience. This article reviews a novel biocompatible anodic aluminum oxide...

  2. Analysis of anti-condensation mechanism on superhydrophobic anodic aluminum oxide surface

    International Nuclear Information System (INIS)

    Wu, Yanpeng; Zhang, Chaoying

    2013-01-01

    Wetting theory about superhydrophobic surfaces reveals that hydrophobicity of surfaces has great relationship with surface roughness and surface free energy. Adopt electrochemical plus fluorine silane modified method to prepare superhydrophobic surface on anodic aluminum oxide surface, which not only enhances surface roughness, but also reduces surface free energy, even the static contact angle can reach 159.2° and anti-condensation is authenticated. Based on the experimental findings, analyze the reason of anti-condensation on superhydrophobic surfaces: one is that the density of droplets formed on superhydrophobic surfaces is low and the number of droplets is little; the other is bigger static contact angle and smaller rolling angle on superhydrophobic surfaces make droplets easy to detach on smaller tilt angle. This research can solve some condensation problems of equipment using in HVAC systems, such as heat exchangers in air conditioning system, cold radiation boards, air supply outlets, and so on. Highlights: • Prepare superhydrophobic surface on anodic aluminum oxide surface. • Analyze the reason of anti-condensation on superhydrophobic surfaces. • The density of droplets formed on superhydrophobic surfaces is low. • Droplets on superhydrophobic surfaces are easy to detach. • This research can solve some problems of equipment using in HVAC systems

  3. Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion

    International Nuclear Information System (INIS)

    Ylivaara, Oili M.E.; Liu, Xuwen; Kilpi, Lauri; Lyytinen, Jussi; Schneider, Dieter; Laitinen, Mikko; Julin, Jaakko; Ali, Saima; Sintonen, Sakari; Berdova, Maria; Haimi, Eero; Sajavaara, Timo; Ronkainen, Helena; Lipsanen, Harri

    2014-01-01

    Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD enables conformal growth on 3-dimensional structures at relatively low temperatures. For MEMS device design and fabrication, the understanding of stress and mechanical properties such as elastic modulus, hardness and adhesion of thin film is crucial. In this work a comprehensive characterization of the stress, elastic modulus, hardness and adhesion of ALD aluminum oxide (Al 2 O 3 ) films grown at 110–300 °C from trimethylaluminum and water is presented. Film stress was analyzed by wafer curvature measurements, elastic modulus by nanoindentation and surface-acoustic wave measurements, hardness by nanoindentation and adhesion by microscratch test and scanning nanowear. The films were also analyzed by ellipsometry, optical reflectometry, X-ray reflectivity and time-of-flight elastic recoil detection for refractive index, thickness, density and impurities. The ALD Al 2 O 3 films were under tensile stress in the scale of hundreds of MPa. The magnitude of the stress decreased strongly with increasing ALD temperature. The stress was stable during storage in air. Elastic modulus and hardness of ALD Al 2 O 3 saturated to a fairly constant value for growth at 150 to 300 °C, while ALD at 110 °C gave softer films with lower modulus. ALD Al 2 O 3 films adhered strongly on cleaned silicon with SiO x termination. - Highlights: • The residual stress of Al 2 O 3 was tensile and stable during the storage in air. • Elastic modulus of Al 2 O 3 saturated to at 170 GPa for films grown at 150 to 300 °C. • At 110 °C Al 2 O 3 films were softer with high residual hydrogen and lower density. • The Al 2 O 3 adhered strongly on the SiO x -terminated silicon

  4. Industrial high-rate (~14 nm/s) deposition of low resistive and transparent ZnOx:Al films on glass

    NARCIS (Netherlands)

    Illiberi, A.; Kniknie, B.; Deelen, J. van; Steijvers, H.L.A.H.; Habets, D.; Simons, P.J.P.M.; Janssen, A.C.; Beckers, E.H.A.

    2011-01-01

    Aluminum doped ZnOx (ZnOx:Al) films have been deposited on glass in an in-line industrial-type reactor by a metalorganic chemical vapor deposition process at atmospheric pressure. Tertiary-butanol has been used as oxidant for diethylzinc and trimethylaluminium as dopant gas. ZnOx:Al films can be

  5. Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

    International Nuclear Information System (INIS)

    Yoo, Hwansu; Kim, Hyojin; Kim, Dojin

    2014-01-01

    A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

  6. Zinc-oxide nanorod / copper-oxide thin-film heterojunction for a nitrogen-monoxide gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Hwansu; Kim, Hyojin; Kim, Dojin [Chungnam National University, Daejeon (Korea, Republic of)

    2014-11-15

    A novel p - n oxide heterojunction structure was fabricated by employing n-type zinc-oxide (ZnO) nanorods grown on an indium-tin-oxide-coated glass substrate by using the hydrothermal method and a p-type copper-oxide (CuO) thin film deposited onto the ZnO nanorod array by using the sputtering method. The crystallinities and microstructures of the heterojunction materials were examined by using X-ray diffraction and scanning electron microscopy. The observed current - voltage characteristics of the p - n oxide heterojunction showed a nonlinear diode-like rectifying behavior. The effects of an oxidizing or electron acceptor gas, such as nitrogen monoxide (NO), on the ZnO nanorod/CuO thin-film heterojunction were investigated to determine the potential applications of the fabricated material for use in gas sensors. The forward current of the p - n heterojunction was remarkably reduced when NO gas was introduced into dry air at temperatures from 100 to 250 .deg. C. The NO gas response of the oxide heterojunction reached a maximum value at an operating temperature of 180 .deg. C and linearly increased as the NO gas concentration was increased from 5 to 30 ppm. The sensitivity value was observed to be as high as 170% at 180 .deg. C when biased at 2 V in the presence of 20-ppm NO. The ZnO nanorod/CuO thin-film heterojunction also exhibited a stable and repeatable response to NO gas. The experimental results suggest that the ZnO nanorod/CuO thin-film heterojunction structure may be a novel candidate for gas sensors.

  7. Plasmon-induced selective carbon dioxide conversion on earth-abundant aluminum-cuprous oxide antenna-reactor nanoparticles.

    Science.gov (United States)

    Robatjazi, Hossein; Zhao, Hangqi; Swearer, Dayne F; Hogan, Nathaniel J; Zhou, Linan; Alabastri, Alessandro; McClain, Michael J; Nordlander, Peter; Halas, Naomi J

    2017-06-21

    The rational combination of plasmonic nanoantennas with active transition metal-based catalysts, known as 'antenna-reactor' nanostructures, holds promise to expand the scope of chemical reactions possible with plasmonic photocatalysis. Here, we report earth-abundant embedded aluminum in cuprous oxide antenna-reactor heterostructures that operate more effectively and selectively for the reverse water-gas shift reaction under milder illumination than in conventional thermal conditions. Through rigorous comparison of the spatial temperature profile, optical absorption, and integrated electric field enhancement of the catalyst, we have been able to distinguish between competing photothermal and hot-carrier driven mechanistic pathways. The antenna-reactor geometry efficiently harnesses the plasmon resonance of aluminum to supply energetic hot-carriers and increases optical absorption in cuprous oxide for selective carbon dioxide conversion to carbon monoxide with visible light. The transition from noble metals to aluminum based antenna-reactor heterostructures in plasmonic photocatalysis provides a sustainable route to high-value chemicals and reaffirms the practical potential of plasmon-mediated chemical transformations.Plasmon-enhanced photocatalysis holds promise for the control of chemical reactions. Here the authors report an Al@Cu 2 O heterostructure based on earth abundant materials to transform CO 2 into CO at significantly milder conditions.

  8. Mechanical properties of bioplastics cassava starch film with Zinc Oxide nanofiller as reinforcement

    Science.gov (United States)

    Harunsyah; Yunus, M.; Fauzan, Reza

    2017-06-01

    This study focuses on investigating the influence of zinc oxide nanofiller on the mechanical properties of bioplastic cassava starch films. Bioplastic cassava starch film-based zinc oxide reinforced composite biopolymeric films were prepared by casting technique. The content of zinc oxide in the bioplastic films was varied from 0.2%, 0.4%, 0.6%, 0.8% and 1.0% (w/w) by weight of starch. Surface morphologies of the composites bioplastic films were examined by scanning electron microscope (SEM).The result showed that the Tensile strength (TS) was improved significantly with the additional of zinc oxide but the elongation at break (EB %) of the composites was decreased. The maximum tensile strength obtained was 22.30 kgf / mm on