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Sample records for aluminum oxide films

  1. Chemical Liquid Phase Deposition of Thin Aluminum Oxide Films

    OpenAIRE

    Sun, Jie; Sun, Yingchun

    2007-01-01

    Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system pH value played an important role in this experiment. The growth rate is 12 nm/h at room temperature. Post-growth annealing not only densifies and purifies the films, but results in film crystallization a...

  2. Electrodeposition of Vanadium Oxide/Manganese Oxide Hybrid Thin Films on Nanostructured Aluminum Substrates

    OpenAIRE

    Rehnlund, David; Valvo, Mario; Edström, Kristina; Nyholm, Leif

    2014-01-01

    Electrodeposition of functional coatings on aluminum electrodes in aqueous solutions often is impeded by the corrosion of aluminum. In the present work it is demonstrated that electrodeposition of vanadium, oxide films on nanostructured aluminum substrates can be achieved in acidic electrolytes employing a novel strategy in which a thin interspacing layer of manganese oxide is first electrodeposited on aluminum microrod substrates. Such deposited films, which were studied using SEM, XPS, XRD,...

  3. Chemical Liquid Phase Deposition of Thin Aluminum Oxide Films

    Institute of Scientific and Technical Information of China (English)

    SUN,Jie(孙捷); SUN,Ying-Chun(孙迎春)

    2004-01-01

    Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system's pH value played an important role in this experiment. The growth rate is 12 nm/h with the deposition at [Al2(SO4)3]=0.0837 mol·L-1, [NaHCO3]=0.214 mol·L-1, 15 ℃. Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well, Excellent quality of A12O3 films in this work is supported by electron dispersion spectroscopy,Fourier transform infrared spectrum, X-ray diffraction spectrum and scanning electron microscopy photograph.

  4. Anodic Oxidation in Aluminum Electrode by Using Hydrated Amorphous Aluminum Oxide Film as Solid Electrolyte under High Electric Field.

    Science.gov (United States)

    Yao, Manwen; Chen, Jianwen; Su, Zhen; Peng, Yong; Zou, Pei; Yao, Xi

    2016-05-01

    Dense and nonporous amorphous aluminum oxide (AmAO) film was deposited onto platinized silicon substrate by sol-gel and spin coating technology. The evaporated aluminum film was deposited onto the AmAO film as top electrode. The hydrated AmAO film was utilized as a solid electrolyte for anodic oxidation of the aluminum electrode (Al) film under high electric field. The hydrated AmAO film was a high efficiency electrolyte, where a 45 nm thick Al film was anodized completely on a 210 nm thick hydrated AmAO film. The current-voltage (I-V) characteristics and breakdown phenomena of a dry and hydrated 210 nm thick AmAO film with a 150 nm thick Al electrode pad were studied in this work. Breakdown voltage of the dry and hydrated 210 nm thick AmAO film were 85 ± 3 V (405 ± 14 MV m(-1)) and 160 ± 5 V (762 ± 24 MV m(-1)), respectively. The breakdown voltage of the hydrated AmAO film increased about twice, owing to the self-healing behavior (anodic oxidation reaction). As an intuitive phenomenon of the self-healing behavior, priority anodic oxidation phenomena was observed in a 210 nm thick hydrated AmAO film with a 65 nm thick Al electrode pad. The results suggested that self-healing behavior (anodic oxidation reaction) was occurring nearby the defect regions of the films during I-V test. It was an effective electrical self-healing method, which would be able to extend to many other simple and complex oxide dielectrics and various composite structures.

  5. RF Magnetron Sputtering Aluminum Oxide Film for Surface Passivation on Crystalline Silicon Wafers

    Directory of Open Access Journals (Sweden)

    Siming Chen

    2013-01-01

    Full Text Available Aluminum oxide films were deposited on crystalline silicon substrates by reactive RF magnetron sputtering. The influences of the deposition parameters on the surface passivation, surface damage, optical properties, and composition of the films have been investigated. It is found that proper sputtering power and uniform magnetic field reduced the surface damage from the high-energy ion bombardment to the silicon wafers during the process and consequently decreased the interface trap density, resulting in the good surface passivation; relatively high refractive index of aluminum oxide film is benefic to improve the surface passivation. The negative-charged aluminum oxide film was then successfully prepared. The surface passivation performance was further improved after postannealing by formation of an SiOx interfacial layer. It is demonstrated that the reactive sputtering is an effective technique of fabricating aluminum oxide surface passivation film for low-cost high-efficiency crystalline silicon solar cells.

  6. Electrophoretic deposition of PTFE particles on porous anodic aluminum oxide film and its tribological properties

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Dongya; Dong, Guangneng, E-mail: donggn@mail.xjtu.edu.cn; Chen, Yinjuan; Zeng, Qunfeng

    2014-01-30

    Polytetrafluoroethylene (PTFE) composite film was successfully fabricated by depositing PTFE particles into porous anodic aluminum oxide film using electrophoretic deposition (EPD) process. Firstly, porous anodic aluminum oxide film was synthesized by anodic oxidation process in sulphuric acid electrolyte. Then, PTFE particles in suspension were directionally deposited into the porous substrate. Finally, a heat treatment at 300 °C for 1 h was utilized to enhance PTFE particles adhesion to the substrate. The influence of anodic oxidation parameters on the morphology and micro-hardness of the porous anodic aluminum oxide film was studied and the PTFE particles deposited into the pores were authenticated using energy-dispersive spectrometer (EDS) and scanning electron microscopy (SEM). Tribological properties of the PTFE composite film were investigated under dry sliding. The experimental results showed that the composite film exhibit remarkable low friction. The composite film had friction coefficient of 0.20 which deposited in 15% PTFE emulsion at temperature of 15 °C and current density of 3 A/dm{sup 2} for 35 min. In addition, a control specimen of porous anodic aluminum oxide film and the PTFE composite film were carried out under the same test condition, friction coefficient of the PTFE composite film was reduced by 60% comparing with the control specimen at 380 MPa and 100 mm/s. The lubricating mechanism was that PTFE particles embedded in porous anodic aluminum oxide film smeared a transfer film on the sliding path and the micro-pores could support the supplement of solid lubricant during the sliding, which prolonged the lubrication life of the aluminum alloys.

  7. Electrophoretic deposition of PTFE particles on porous anodic aluminum oxide film and its tribological properties

    Science.gov (United States)

    Zhang, Dongya; Dong, Guangneng; Chen, Yinjuan; Zeng, Qunfeng

    2014-01-01

    Polytetrafluoroethylene (PTFE) composite film was successfully fabricated by depositing PTFE particles into porous anodic aluminum oxide film using electrophoretic deposition (EPD) process. Firstly, porous anodic aluminum oxide film was synthesized by anodic oxidation process in sulphuric acid electrolyte. Then, PTFE particles in suspension were directionally deposited into the porous substrate. Finally, a heat treatment at 300 °C for 1 h was utilized to enhance PTFE particles adhesion to the substrate. The influence of anodic oxidation parameters on the morphology and micro-hardness of the porous anodic aluminum oxide film was studied and the PTFE particles deposited into the pores were authenticated using energy-dispersive spectrometer (EDS) and scanning electron microscopy (SEM). Tribological properties of the PTFE composite film were investigated under dry sliding. The experimental results showed that the composite film exhibit remarkable low friction. The composite film had friction coefficient of 0.20 which deposited in 15% PTFE emulsion at temperature of 15 °C and current density of 3 A/dm2 for 35 min. In addition, a control specimen of porous anodic aluminum oxide film and the PTFE composite film were carried out under the same test condition, friction coefficient of the PTFE composite film was reduced by 60% comparing with the control specimen at 380 MPa and 100 mm/s. The lubricating mechanism was that PTFE particles embedded in porous anodic aluminum oxide film smeared a transfer film on the sliding path and the micro-pores could support the supplement of solid lubricant during the sliding, which prolonged the lubrication life of the aluminum alloys.

  8. Surface enhanced Raman scattering of biospecies on anodized aluminum oxide films

    Science.gov (United States)

    Zhang, C.; Smirnov, A. I.; Hahn, D.; Grebel, H.

    2007-06-01

    Traditionally, aluminum and anodized aluminum oxide films (AAO) are not the platforms of choice for surface-enhanced raman scattering (SERS) experiments despite of the aluminum's large negative permittivity value. Here we examine the usefulness of aluminum and nanoporous alumina platforms for detecting soft biospecies ranging from bacterial spores to protein markers. We used these flat platforms to examine SERS of a model protein (cytochrome c from bovine heart tissue) and bacterial cells (spores of Bacillus subtilis ATCC13933 used as Anthrax simulant) and demonstrated clear Raman amplification.

  9. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    International Nuclear Information System (INIS)

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance gm change, threshold voltage VT change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature

  10. Evolution of Surface Oxide Film of Typical Aluminum Alloy During Medium-Temperature Brazing Process

    Institute of Scientific and Technical Information of China (English)

    程方杰; 赵海微; 王颖; 肖兵; 姚俊峰

    2014-01-01

    The evolution of the surface oxide film along the depth direction of typical aluminum alloy under medium-temperature brazing was investigated by means of X-ray photoelectron spectroscopy (XPS). For the alloy with Mg content below 2.0wt%, whether under cold rolling condition or during medium-temperature brazing process, the en-richment of Mg element on the surface was not detected and the oxide film was pure Al2O3. However, the oxide film grew obviously during medium-temperature brazing process, and the thickness was about 80 nm. For the alloy with Mg content above 2.0wt%, under cold rolling condition, the original surface oxide film was pure Al2O3. However, the Mg element was significantly enriched on the outermost surface during medium-temperature brazing process, and MgO-based oxide film mixed with small amount of MgAl2O4 was formed with a thickness of about 130 nm. The alloy-ing elements of Mn and Si were not enriched on the surface neither under cold rolling condition nor during medium-temperature brazing process for all the selected aluminum alloy, and the surface oxide film was similar to that of pure aluminum, which was almost entire Al2O3.

  11. Synthesis of iridescent Ni-containing anodic aluminum oxide films by anodization in oxalic acid

    Science.gov (United States)

    Xu, Qin; Ma, Hong-Mei; Zhang, Yan-Jun; Li, Ru-Song; Sun, Hui-Yuan

    2016-02-01

    Ni-containing anodic aluminum oxide films with highly saturated colors were synthesized using an ac electrodeposition method, and the optical and magnetic characteristics of the films were characterized. Precisely controllable color tuning could be obtained using wet-chemical etching to thin and widen the anodic aluminum oxide films pores isotropically before Ni deposition. Magnetic measurements indicate that such colored composite films not exhibit obvious easy magnetization direction. The resulted short (200 nm in length) and wide (50 nm in diameter) Ni nanowires present only fcc phase. The magnetization reversal mechanism is in good agreement with the symmetric fanning reversal mode which is discussed in detail. Such films may find applications in decoration, display and multifunctional anti-counterfeiting applications.

  12. Electromechanical Breakdown of Barrier-Type Anodized Aluminum Oxide Thin Films Under High Electric Field Conditions

    Science.gov (United States)

    Chen, Jianwen; Yao, Manwen; Yao, Xi

    2016-02-01

    Barrier-type anodized aluminum oxide (AAO) thin films were formed on a polished aluminum substrate via electrochemical anodization in 0.1 mol/L aqueous solution of ammonium pentaborate. Electromechanical breakdown occurred under high electric field conditions as a result of the accumulation of mechanical stress in the film-substrate system by subjecting it to rapid thermal treatment. Before the breakdown event, the electricity of the films was transported in a highly nonlinear way. Immediately after the breakdown event, dramatic cracking of the films occurred, and the cracks expanded quickly to form a mesh-like dendrite network. The breakdown strength was significantly reduced because of the electromechanical coupling effect, and was only 34% of the self-healing breakdown strength of the AAO film.

  13. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.

    2013-07-18

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  14. Luminescence properties of oxide films formed by anodization of aluminum in 12-tungstophosphoric acid

    International Nuclear Information System (INIS)

    In this paper, we have investigated luminescence properties of oxide films formed by anodization of aluminum in 12-tungstophosphoric acid. For the first time we have measured weak luminescence during anodization of aluminum in this electrolyte (so-called galvanoluminescence GL) and showed that there are wide GL bands in the visible region of the spectrum and observed two dominant spectral peaks. The first one is at about 425 nm, and the second one shifts with anodization voltage. As the anodization voltage approaches the breakdown voltage, a large number of sparks appear superimposed on the anodic GL. Several intensive band peaks were observed under breakdown caused by electron transitions in W, P, Al, O, H atoms. Furthermore, photoluminescence (PL) of anodic oxide films and anodic-spark formed oxide coatings were performed. In both cases wide PL bands in the range from 320 nm to 600 nm were observed.

  15. In-Line Sputtered Gallium and Aluminum Codoped Zinc Oxide Films for Organic Solar Cells

    Directory of Open Access Journals (Sweden)

    Shang-Chou Chang

    2014-01-01

    Full Text Available Gallium and aluminum codoped zinc oxide (GAZO films were deposited at different temperatures by in-line sputtering. Aluminum is thermally unstable compared to other elements in GAZO films. The grains of GAZO films increase with deposition temperature. Coalescence between grains was observed for GAZO films deposited at 250°C. The deposition temperature exhibits positive influence on crystallinity, and electrical and optical properties of GAZO films. The carrier concentration and mobility of GAZO films increase, while the electrical resistivity of GAZO films decreases with deposition temperature. The average optical transmittance of GAZO films rises with deposition temperature. In-line sputtering demonstrates a potential method with simplicity, mass production, and large-area deposition to produce GAZO films with good electrical and optical quality. The electrical resistivity of 4.3 × 10−4 Ω cm and the average optical transmittance in the visible range from 400 to 800 nm of 92% can be obtained for GAZO films deposited at 250°C. The hybrid organic solar cells (OSC were fabricated on GAZO-coated glass substrates. Blended poly(3-hexylthiophene (P3HT and [6,6]-phenyl C61 butyric acid methyl ester (PCBM were the photoactive materials in OSC. The power conversion efficiency of OSC is 0.65% for the OSC with the 250°C deposited GAZO electrode.

  16. Reaction behavior between the oxide film of LY12 aluminum alloy and the flux

    Institute of Scientific and Technical Information of China (English)

    薛松柏; 董健; 吕晓春; 顾文华

    2004-01-01

    In this paper, the brazing mechanism of LY12 aluminum alloy at middle range temperature was presented. The CsF-AlF3 non-corrosive flux was utilized to remove the complex oxide film on the surface of LY12 aluminum alloy. The results revealed that the oxide film was removed by the improved CsF-AlF3 flux accompanied with the occurrence of reaction as well as dissolution and the compounds CsF played an important role to remove the oxide film. Actually, the high activity of flux, say, the ability to remove the oxide film, was due to the presence of the compounds, such as NH4F,NH4AlF4 and composite molten salt. The production of HF was the key issue to accelerate the reaction and enhance to eliminate the oxide film by dissolution. It was found that the rare earth element La at small percentage was not enriched at the interface. Moreover, the rare earth fluoride enhanced the dissolution behavior.

  17. Modelling the growth process of porous aluminum oxide film during anodization

    Science.gov (United States)

    Aryslanova, E. M.; Alfimov, A. V.; Chivilikhin, S. A.

    2015-11-01

    Currently it has become important for the development of metamaterials and nanotechnology to obtain regular self-assembled structures. One such structure is porous anodic alumina film that consists of hexagonally packed cylindrical pores. In this work we consider the anodization process, our model takes into account the influence of layers of aluminum and electrolyte on the rate of growth of aluminum oxide, as well as the effect of surface diffusion. In present work we consider those effects. And as a result of our model we obtain the minimum distance between centers of alumina pores in the beginning of anodizing process.

  18. Synthesis and properties of iridescent Zn-containing anodic aluminum oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Xiaoxuan; Sun, Huiyuan, E-mail: huiyuansun@126.com; Liu, Lihu; Hou, Xue; Liu, Huiyuan

    2015-07-01

    A simple method of fabricating Zn-containing anodic aluminum oxide films for multifunctional anticounterfeit technology is reported. The resulting membranes were characterized with UV–vis illumination studies, natural light illumination color experiments, and electron microscopy analysis. Deposition of Zn in the nanopore region can enhance the color saturation of the thin alumina film with different colors dramatically. Both the anodization time and etching time have great influence on the structural color. The mechanisms for the emergence of this phenomenon are discussed and theoretical analysis further demonstrates the experimental results. - Highlights: • Iridescent PAA@Zn nanocomposite films were successfully fabricated. • A simple organics-assisted method is applied to making a series of fancy and multicolor patterns. • The color varies with the angle of incidence of the light used to view the film as is expected with Bragg–Snell formula. • Such colored films could be used in multifunctional anti-counterfeiting applications.

  19. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    Science.gov (United States)

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  20. An anode with aluminum doped on zinc oxide thin films for organic light emitting devices

    International Nuclear Information System (INIS)

    Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150-bar oC in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt% in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was 4x10-4Ωcm and the average transmission in the visible range 400-700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm2

  1. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    Directory of Open Access Journals (Sweden)

    M. Morales-Masis

    2014-09-01

    Full Text Available Improving the conductivity of earth-abundant transparent conductive oxides (TCOs remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H2-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H2-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  2. Highly flexible transparent thin film heaters based on silver nanowires and aluminum zinc oxides

    Energy Technology Data Exchange (ETDEWEB)

    Cheong, Hahn-Gil; Kim, Jin-Hoon; Song, Jun-Hyuk; Jeong, Unyong; Park, Jin-Woo, E-mail: jwpark09@yonsei.ac.kr

    2015-08-31

    In this work, we developed highly flexible transparent film heaters (f-TFHs) composed of Ag nanowire networks (AgNWs) and aluminum zinc oxide (AZO). Uniform AgNWs were roll-to-roll coated on polyethylene terephthalate (PET) substrates using the Mayer rod method, and AZO was sputter-deposited atop the AgNWs at room temperature. The sheet resistance (R{sub s}) and transparency (T{sub opt}) of the AZO-coated AgNWs changed only slightly compared with the uncoated AgNWs. AZO is thermally less conductive than the heat pipes, but increases the thermal efficiency of the heaters blocking the heat convection through the air. Based on Joule heating, a higher average film temperature (T{sub ave}) is attained at a fixed electric potential drop between electrodes (ϕ) as the R{sub s} of the film decreases. Our experimental results revealed that T{sub ave} of the hybrid f-TFH is higher than AgNWs when the ratio of the area coverage of AgNWs to AZO is over a certain value. When a ϕ as low as 3 V/cm was applied to 5 cm × 5 cm f-TFHs, the maximum temperature of the hybrid film was over 100 °C, which is greater than that of AgNWs by more than 30 °C. Furthermore, uniform heating throughout the surfaces is achieved in the hybrid films while heating begins in small areas where densities of the nanowires (NWs) are the highest in the bare network. The non-uniform heating decreases the lifetime of f-TFHs by forming hot spots. Cyclic bending test results indicated that the hybrid films were as flexible as the AgNWs, and the R{sub s} of the hybrid films changes only slightly until 5000 cycles. Combined with the high-throughput coating technology presented here, the hybrid films will provide a robust and scalable strategy for large-area f-TFHs with highly enhanced performance. - Highlights: • We developed highly efficient flexible thin film heaters based on Ag nanowires and AZO composites. • In the composite, AZO plays an important role as an insulation blanket to block heat loss to

  3. Atomic layer deposited lithium aluminum oxide: (In)dependency of film properties from pulsing sequence

    Energy Technology Data Exchange (ETDEWEB)

    Miikkulainen, Ville, E-mail: ville.miikkulainen@helsinki.fi; Nilsen, Ola; Fjellvåg, Helmer [Centre for Materials Science and Nanotechnology (SMN), Department of Chemistry, University of Oslo, P.O. Box 1126 Blindern, NO-0318 Oslo (Norway); Li, Han; King, Sean W. [Intel Corporation, 5200 NE Elam Young Parkway, Hillsboro, Oregon 97124 (United States); Laitinen, Mikko; Sajavaara, Timo [Department of Physics, University of Jyväskylä, P.O. Box 35, FI-40014 Jyväskylä (Finland)

    2015-01-01

    Atomic layer deposition (ALD) holds markedly high potential of becoming the enabling method for achieving the three-dimensional all-solid-state thin-film lithium ion battery (LiB). One of the most crucial components in such a battery is the electrolyte that needs to hold both low electronic conductivity and at least fair lithium ion conductivity being at the same time pinhole free. To obtain these desired properties in an electrolyte film, one necessarily has to have a good control over the elemental composition of the deposited material. The present study reports on the properties of ALD lithium aluminum oxide (Li{sub x}Al{sub y}O{sub z}) thin films. In addition to LiB electrolyte applications, Li{sub x}Al{sub y}O{sub z} is also a candidate low dielectric constant (low-k) etch stop and diffusion barrier material in nanoelectronics applications. The Li{sub x}Al{sub y}O{sub z} films were deposited employing trimethylaluminum-O{sub 3} and lithium tert-butoxide-H{sub 2}O for Al{sub 2}O{sub 3} and Li{sub 2}O/LiOH, respectively. The composition was aimed to be controlled by varying the pulsing ratio of those two binary oxide ALD cycles. The films were characterized by several methods for composition, crystallinity and phase, electrical properties, hardness, porosity, and chemical environment. Regardless of the applied pulsing ratio of Al{sub 2}O{sub 3} and Li{sub 2}O/LiOH, all the studied ALD Li{sub x}Al{sub y}O{sub z} films of 200 and 400 nm in thickness were polycrystalline in the orthorhombic β-LiAlO{sub 2} phase and also very similar to each other with respect to composition and other studied properties. The results are discussed in the context of both fundamental ALD chemistry and applicability of the films as thin-film LiB electrolytes and low-k etch stop and diffusion barriers.

  4. Plasmon-induced optical switching of electrical conductivity in porous anodic aluminum oxide films encapsulated with silver nanoparticle arrays.

    Science.gov (United States)

    Huang, Chen-Han; Lin, Hsing-Ying; Lau, Ben-Chao; Liu, Chih-Yi; Chui, Hsiang-Chen; Tzeng, Yonhua

    2010-12-20

    We report on plasmon induced optical switching of electrical conductivity in two-dimensional (2D) arrays of silver (Ag) nanoparticles encapsulated inside nanochannels of porous anodic aluminum oxide (AAO) films. The reversible switching of photoconductivity greatly enhanced by an array of closely spaced Ag nanoparticles which are isolated from each other and from the ambient by thin aluminum oxide barrier layers are attributed to the improved electron transport due to the localized surface plasmon resonance and coupling among Ag nanoparticles. The photoconductivity is proportional to the power, and strongly dependent on the wavelength of light illumination. With Ag nanoparticles being isolated from the ambient environments by a thin layer of aluminum oxide barrier layer of controlled thickness in nanometers to tens of nanometers, deterioration of silver nanoparticles caused by environments is minimized. The electrochemically fabricated nanostructured Ag/AAO is inexpensive and promising for applications to integrated plasmonic circuits and sensors. PMID:21197062

  5. A study of the initial oxidation of evaporated thin films of aluminum by AES, ELS, and ESD

    Science.gov (United States)

    Bujor, M.; Larson, L. A.; Poppa, H.

    1982-01-01

    The room temperature, low pressure, oxidation of evaporated aluminum thin films has been studied by AES, ELS, and ESD. ESD was the most sensitive of the three methods to characterize a clean aluminum surface. Two oxidation stages were distinguished in the 0-3000 L oxygen exposure range. Between 0 and 50 L, the chemisorption of oxygen atoms was characterized by a fast decrease of the 67 eV AES Al peak and the 10 eV surface plasmon peak, and by a simultaneous increase of the oxygen AES and ESD signals. After 50 L, a change in slope in all AES and ESD signal variations was attributed to the slow growth of a thin layer of aluminum oxide, which after 3000 L was still only a few angstroms thick.

  6. Influence of the surface pre-treatment of aluminum on the processes of formation of cerium oxides protective films

    Science.gov (United States)

    Andreeva, R.; Stoyanova, E.; Tsanev, A.; Stoychev, D.

    2016-03-01

    It is known that there is special interest in the contemporary investigations on conversion treatment of aluminum aimed at promoting its corrosion stability, which is focused on electrolytes on the basis of salts of metals belonging to the group of rare-earth elements. Their application is especially attractive, as it enables a successful substitution of the presently applied highly efficient, but at the same time toxic Cr6+-containing electrolytes. The present paper presents a study on the influence of the preliminary alkaline activation and acidic de-oxidation of the aluminum surface on the processes of immersion formation of protective cerium oxides films on Al 1050. The results obtained show that their deposition from simple electrolytes (containing only salts of Ce3+ ions) on the Al surface, treated only in alkaline solution, occurs at a higher rate, which leads to preparing thicker oxide films having a better protective ability. In the cases when the formation of oxide films is realized in a complex electrolyte (containing salts of Ce3+ and Cu2+ ions), better results are obtained with respect to the morphology and protective action of cerium oxides film on samples that have been consecutively activated in alkaline solution and deoxidized in acidic solution. Electrochemical investigations were carried out in a model corrosion medium (0.1 M NaCl); it was shown that the cerium protective films, deposited by immersion, have a cathodic character with regard to the aluminum support and inhibit the occurrence of the depolarizing corrosion process -- the reaction of oxygen reduction.

  7. The effect of oxygen flow rate on refractive index of aluminum oxide film deposited by electron beam evaporation technique

    Directory of Open Access Journals (Sweden)

    R Shakouri

    2016-02-01

    Full Text Available The effects of oxygen flow rate on refractive index of aluminum oxide film have been investigated. The Al2O3 films are deposited by electron beam on glass substrate at different oxygen flow rates. The substrate was heated to reach  and the temperature was constant during the thin film growth. The transmittance spectrum of samples was recorded in the wavelength 400-800 nm.  Then, using the maxima and minima of transmittance the refractive index and the extinction coefficient of samples were determined. It has been found that if we reduce the oxygen flow, while the evaporation rate is kept constant, the refractive index of Al2O3 films increases. On the other hand, reduced oxygen pressure causes the Al2O3 films to have some absorption.

  8. Effects of acetic acid on microstructure and electrochemical properties of nano cerium oxide films coated on AA7020-T6 aluminum alloy

    Institute of Scientific and Technical Information of China (English)

    H. Hasannejad; T. Shahrabi; M. Aliofkhazraei

    2009-01-01

    Nano cerium oxide films were applied on AA7020-T6 aluminum alloy and the effects of acetic acid concentration on the microstructure and electrochemical properties of the coated samples were investigated by using scanning electron microscopy (SEM), X-ray diffraction (XRD), crack-flee films with well-developed grains were obtained and grain sizes of the films decreased. Elimination of cracks and decreasing grain size of the nano cerium oxide films caused corrosion resistance to increase.

  9. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.

    2013-02-06

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.

  10. Electrode patterning and annealing processes of aluminum-doped zinc oxide thin films using a UV laser system

    Science.gov (United States)

    Hsiao, Wen-Tse; Tseng, Shih-Feng; Huang, Kuo-Cheng; Chiang, Donyau

    2013-01-01

    This study presents the hybrid processing (patterning and annealing) of aluminum-doped zinc oxide (AZO) films in a one-step process using a diode-pumped-solid-state (DPSS) ultraviolet (UV) laser system. The focused laser beam had a diameter of 30 μm and the positive defocused laser beam had a diameter of 1 mm. Both beams were adjusted using a UV laser-processing system. AZO films were deposited on Corning Eagle 2000® optical glass sheets with a thickness of 0.7 mm using a sputtering method. The deposited films were approximately 200 nm. The optoelectronic properties of machined (patterning and annealing) AZO films depend on the laser pulse frequency and galvanometer scanning speed. The surface morphology, roughness, optical transmittance, and resistivity of the films after the laser patterning and annealing processes were measured using a three-dimensional confocal laser scanning microscope, a field emission scanning electron microscope (FE-SEM), a spectrophotometer, and a four-point probe instrument, respectively. Experimental results indicate that the ablation depth increased as the pulse repetition frequency increased. The ablation depth also decreased as the galvanometric scanning speed increased. The transmittance spectra of the film changes slightly after laser annealing, and the average transmittance in the visible region is approximately 83%. All resistivity values of laser-patterned and annealed AZO films decreased significantly. The structural properties grain size was calculated firm the X-ray diffraction (XRD) spectra using the Scherrer equation that increased from 7.4 nm to 12 nm as the annealing scanning speed decreased from 800 mm/s to 400 mm/s. The root mean square (RMS) values of annealed AZO films treated with a laser scanning speed of 500 mm/s with a pulse repetition frequency of 40 kHz, 55 kHz, and 70 kHz were 1.1 nm, 1.2 nm, and 1.8 nm, respectively.

  11. Effects of target angle on the properties of aluminum doped zinc oxide films prepared by DC magnetron sputtering for thin film solar cell applications.

    Science.gov (United States)

    Park, Hyeongsik; Iftiquar, S M; Thuy, Trinh Than; Jang, Juyeon; Ahn, Shihyun; Kim, Sunbo; Lee, Jaehyeong; Jung, Junhee; Shin, Chonghoon; Kim, Minbum; Yi, Junsin

    2014-10-01

    An aluminum doped zinc oxide (AZO) films for front contacts of thin film solar cells, in this work, were prepared by DC magnetron sputtering with different target angles. Effects of target angles on the structural and electro-optical properties of AZO films were investigated. Also, to clarify the light trapping of textured AZO film, amorphous silicon thin film solar cells were fabricated on the textured AZO/glass substrate and the performance of solar cells were studied. The surface became more irregular with increasing the target angle due to larger grains. The self-surface textured morphology, which is a favorable property as front layer of solar cell, exhibited at target angle of 72.5 degrees. We obtained the films with various opto-electronic properties by controlling target angle from 32.5 degrees to 72.5 degrees. The spectral haze increased substantially with the target angle, whereas the electrical resistivity was increased. The conversion efficiency of amorphous silicon solar cells with textured AZO film as a front electrode was improved by the increase of short-circuit current density and fill factor, compared to cell with relatively flat AZO films. PMID:25942853

  12. Nanoporous anodic aluminum oxide as a promising material for the electrostatically-controlled thin film interference filter

    International Nuclear Information System (INIS)

    This study presents the approach to implement the electrostatically-controlled thin film optical filter by using a nanoporous anodic aluminum oxide (np-AAO) layer as the key suspended micro structure. The bi-stable optical filter operates in the visible spectral range. In this work, the presented bi-stable optical filter has averaged reflectivity of 60%, and the central wavelengths are 580 and 690 nm respectively for on and off states. The presented np-AAO layer offers the following merits for the thin film optical filter: (1) material properties of np-AAO film, such as refractive index, elastic modulus and dielectric constant, can be easily changed by a low temperature pore-widening process, (2) in-use stiction of the suspended np-AAO structure can be reduced by the small contact area of nanoporous textures, (3) driving (pull-in) voltage can be reduced due to a large dielectric constant (εAAO is 7.05) and small stiffness of np-AAO film and (4) dielectric charging can be reduced by the np-AAO material; thus the offset voltage is small. The study reports the design, fabrication and experimental results of the bi-stable optical filter to demonstrate the advantages of the presented device. The np-AAO material also has the potential for applications of other electrostatic drive micro devices. (paper)

  13. Adsorption of titanium, chromium, and copper atoms on thin aluminum and magnesium oxide film surfaces

    Science.gov (United States)

    Tvauri, I. V.; Turiev, A. M.; Tsidaeva, N. I.; Gazzaeva, M. E.; Vladimirov, G. G.; Magkoev, T. T.

    2012-04-01

    Methods of Auger electron spectroscopy (AES), spectroscopy of characteristic electron energy losses (SCEEL), slow electron diffraction (SED), and contact potential difference (CPD) in ultrahigh vacuum are used to investigate the adsorption-emission properties and stability of two-component film systems formed by putting of Ti, Cr, and Cu atoms on MgO-Mo(011) and Al2O3-Mo(011) surfaces. All atoms have the properties of electronegative adsorbates. Continuous adatom monolayers are formed on the Al2O3-Mo(011) system surface, and three-dimensional islands are formed on the MgO-Mo(011) surface. The properties of monoatomic films on the oxide layer surface are close to those observed for bulk materials. No radical changes of the system properties are detected with increasing dielectric layer thickness. The thermal stability of the newly formed structures decreases in the order Ti, Cr, Cu, Al2O3(MgO), and Mo(011).

  14. The effect of Bi{sup 3+} and Li{sup +} co-doping on the luminescence characteristics of Eu{sup 3+}-doped aluminum oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Padilla-Rosales, I., E-mail: ipadilla@cinvestav.mx [Centro de Investigación y de Estudios Avanzados del IPN, Nanociencias y Nanotecnología, Av. IPN 2508, Col. San Pedro Zacatenco, CP 07360 México D.F. (Mexico); Martinez-Martinez, R. [Instituto de Física y Matemáticas, Universidad Tecnológica de la Mixteca, Carretera a Acatlima Km. 2.5, CP 69000 Huajuapan de León, Oax, México (Mexico); Cabañas, G. [Centro de Investigación y de Estudios Avanzados del IPN, Nanociencias y Nanotecnología, Av. IPN 2508, Col. San Pedro Zacatenco, CP 07360 México D.F. (Mexico); Falcony, C. [Centro de Investigación y de Estudios Avanzados del IPN, Departamento de Física, Av. IPN 2508, Col. San Pedro Zacatenco, CP 07360 México D.F. (Mexico)

    2015-09-15

    The incorporation of Bi{sup 3+} and Li{sup +} as co-dopants in Eu{sup 3+}-doped aluminum oxide films deposited by the ultrasonic spray pyrolysis technique and its effect on the luminescence characteristics of this material are described. Both Bi{sup 3+} and Li{sup +} do not introduce new luminescence features but affect the luminescence intensity of the Eu{sup 3+} related emission spectra as well as the excitation spectra. The introduction of Bi{sup 3+} generates localized states in the aluminum oxide host that result in a quenching of the luminescence intensity, while Li{sup +} and Bi{sup 3+} co-doping increase the luminescence intensity of these films. - Highlights: • Li and Bi co-doping increase the luminescence. • Bi creates localized states in the Al{sub 2}O{sub 3} host. • Li was incorporated as a co-activator.

  15. Atomic force microscopy identification of Al-sites on ultrathin aluminum oxide film on NiAl(110)

    Science.gov (United States)

    Li, Yan Jun; Brndiar, J.; Naitoh, Y.; Sugawara, Y.; Štich, I.

    2015-12-01

    Ultrathin alumina film formed by oxidation of NiAl(110) was studied by non-contact atomic force microscopy in an ultra high vacuum at room temperature with the quest to provide the ultimate understanding of structure and bonding of this complicated interface. Using a very stiff Si cantilever with significantly improved resolution, we have obtained images of this system with unprecedented resolution, surpassing all the previous results. In particular, we were able to unambiguously resolve all the differently coordinated aluminum atoms. This is of importance as the previous images provide very different image patterns, which cannot easily be reconciled with the existing structural models. Experiments are supported by extensive density functional theory modeling. We find that the system is strongly ionic and the atomic force microscopy images can reliably be understood from the electrostatic potential which provides an image model in excellent agreement with the experiments. However, in order to resolve the finer contrast features we have proposed a more sophisticated model based on more realistic approximants to the incommensurable alumina interface.

  16. Burning characteristics of individual aluminum/aluminum oxide particles

    OpenAIRE

    Ruttenberg, Eric C.

    1996-01-01

    Approved for public release; distribution is unlimited An experimental investigation was conducted in which the burning characteristics of individual aluminum/aluminum oxide particles were measured using a windowed combustion bomb at atmospheric pressure and under gravity-fall conditions. A scanning electron microscope (SEM) was used to measure the size distribution of the initial aluminum particles and the aluminum oxide residue. Analysis of the residue indicated that the mass of aluminum...

  17. Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering

    Science.gov (United States)

    Dondapati, Hareesh; Santiago, Kevin; Pradhan, A. K.

    2013-10-01

    We have investigated the responsible mechanism for the observation of metallic conductivity at room temperature and metal-semiconductor transition (MST) at lower temperatures for aluminum-doped zinc oxide (AZO) films. AZO films were grown on glass substrates by radio-frequency magnetron sputtering with varying substrate temperatures (Ts). The films were found to be crystalline with the electrical resistivity close to 1.1 × 10-3 Ω cm and transmittance more than 85% in the visible region. The saturated optical band gap of 3.76 eV was observed for the sample grown at Ts of 400 °C, however, a slight decrease in the bandgap was noticed above 400 °C, which can be explained by Burstein-Moss effect. Temperature dependent resistivity measurements of these highly conducting and transparent films showed a MST at ˜110 K. The observed metal-like and metal-semiconductor transitions are explained by taking into account the Mott phase transition and localization effects due to defects. All AZO films demonstrate crossover in permittivity from positive to negative and low loss in the near-infrared region, illustrating its applications for plasmonic metamaterials, including waveguides for near infrared telecommunication region. Based on the results presented in this study, the low electrical resistivity and high optical transmittance of AZO films suggested a possibility for the application in the flexible electronic devices, such as transparent conducting oxide film on LEDs, solar cells, and touch panels.

  18. Influence of Oxygen Gas Ratio on the Properties of Aluminum-Doped Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering.

    Science.gov (United States)

    Kim, Minha; Jang, Yong-Jun; Jung, Ho-Sung; Song, Woochang; Kang, Hyunil; Kim, Eung Kwon; Kim, Donguk; Yi, Junsin; Lee, Jaehyeong

    2016-05-01

    Aluminum-doped zinc oxide (AZO) thin films were deposited on glass and polyimide substrates using radio frequency magnetron sputtering. We investigated the effects of the oxygen gas ratio on the properties of the AZO films for Cu(In,Ga)Se2 thin-film solar cell applications. The structural and optical properties of the AZO thin films were measured using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), and UV-Visible-NIR spectrophotometry. The oxygen gas ratio played a crucial role in controlling the optical as well as electrical properties of the films. When oxygen gas was added into the film, the surface AZO thin films became smoother and the grains were enlarged while the preferred orientation changed from (0 0 2) to (1 0 0) plane direction of the hexagonal phase. An improvement in the transmittance of the AZO thin films was achieved with the addition of 2.5-% oxygen gas. The electrical resistivity was highly increased even for a small amount of the oxygen gas addition.

  19. Improving the direct electron transfer in monolithic bioelectrodes prepared by immobilization of FDH enzyme on carbon-coated anodic aluminum oxide films

    Directory of Open Access Journals (Sweden)

    Alberto eCastro-Muñiz

    2016-02-01

    Full Text Available The present work reports the preparation of binderless carbon-coated porous films and the study of their performance as monolithic bioanodes. The films were prepared by coating anodic aluminum oxide (AAO films with a thin layer of nitrogen-doped carbon by chemical vapor deposition. The films have cylindrical straight pores with controllable diameter and length. These monolithic films were used directly as bioelectrodes by loading the films with D-fructose dehydrogenase (FDH, an oxidoreductase enzyme that catalyzes the oxidation of D-fructose to 5-keto-D-fructose. The immobilization of the enzymes was carried out by physical adsorption in liquid phase and with an electrostatic attraction method. The latter method takes advantage of the fact that FDH is negatively charged during the catalytic oxidation of fructose. Thus the immobilization was performed under the application of a positive voltage to the CAAO film in a FDH-fructose solution in McIlvaine buffer (pH 5 at 25 ºC. As a result, the FDH modified electrodes with the latter method show much better electrochemical response than that with the conventional physical adsorption method. Due to the singular porous structure of the monolithic films, which consists of an array of straight and parallel nanochannels, it is possible to rule out the effect of the diffusion of the D-fructose into the pores. Thus the improvement in the performance upon using the electrostatic attraction method can be ascribed not only to a higher uptake, but also to a more appropriate molecule orientation of the enzyme units on the surface of the electrodes.

  20. Improving the direct electron transfer in monolithic bioelectrodes prepared by immobilization of FDH enzyme on carbon-coated anodic aluminum oxide films

    Science.gov (United States)

    Castro-Muñiz, Alberto; Hoshikawa, Yasuto; Komiyama, Hiroshi; Nakayama, Wataru; Itoh, Tetsuji; Kyotani, Takashi

    2016-02-01

    The present work reports the preparation of binderless carbon-coated porous films and the study of their performance as monolithic bioanodes. The films were prepared by coating anodic aluminum oxide (AAO) films with a thin layer of nitrogen-doped carbon by chemical vapor deposition. The films have cylindrical straight pores with controllable diameter and length. These monolithic films were used directly as bioelectrodes by loading the films with D-fructose dehydrogenase (FDH), an oxidoreductase enzyme that catalyzes the oxidation of D-fructose to 5-keto-D-fructose. The immobilization of the enzymes was carried out by physical adsorption in liquid phase and with an electrostatic attraction method. The latter method takes advantage of the fact that FDH is negatively charged during the catalytic oxidation of fructose. Thus the immobilization was performed under the application of a positive voltage to the CAAO film in a FDH-fructose solution in McIlvaine buffer (pH 5) at 25 ºC. As a result, the FDH modified electrodes with the latter method show much better electrochemical response than that with the conventional physical adsorption method. Due to the singular porous structure of the monolithic films, which consists of an array of straight and parallel nanochannels, it is possible to rule out the effect of the diffusion of the D-fructose into the pores. Thus the improvement in the performance upon using the electrostatic attraction method can be ascribed not only to a higher uptake, but also to a more appropriate molecule orientation of the enzyme units on the surface of the electrodes.

  1. Characteristics of low-resistivity aluminum-doped zinc oxide films deposited at room temperature by off-axis radio-frequency sputtering on flexible plastic substrates

    Science.gov (United States)

    Wang, Li-Min; Wang, Chih-Yi; Jheng, Ciao-Ren; Wu, Syu-Jhan; Sai, Chen-Kai; Lee, Ya-Ju; Chiang, Ching-Yu; Shew, Bor-Yuan

    2016-08-01

    The crystalline structure, morphology, composition, electrical transport, and optical properties of aluminum-doped zinc oxide (AZO) films are studied for applications in transparent electronics and optoelectronic devices. AZO thin films of c-axis-oriented growth and with different thickness were deposited on PET flexible plastic substrates at room temperature by rf magnetron sputtering. A larger grain size with a decreased strain ɛ value is observed in a thicker film, while changes in composition for films with different thicknesses are insignificant. Moreover, the resistivity of film decreases with increasing thickness, and the low-temperature electrical transport properties can be described by the scenario of quantum corrections to conductivity. With the room-temperature growth conditions, the resistivity of 4.5 × 10-4 Ω cm, carrier concentration of 6.4 × 1020 cm-3, and transmittance of 80 % for the 1100-nm-thick film are obtained. In addition, the optical bandgap energy decreases with increasing film thickness, which can be attributed to the bandgap renormalization and crystallite size effects.

  2. Effect of the Milling Time of the Precursors on the Physical Properties of Sprayed Aluminum-Doped Zinc Oxide (ZnO:Al Thin Films

    Directory of Open Access Journals (Sweden)

    María De La Luz Olvera

    2012-08-01

    Full Text Available Aluminum doped zinc oxide (ZnO:Al thin films were deposited on soda-lime glass substrates by the chemical spray technique. The atomization of the solution was carried out by ultrasonic excitation. Six different starting solutions from both unmilled and milled Zn and Al precursors, dissolved in a mix of methanol and acetic acid, were prepared. The milling process was carried out using a planetary ball mill at a speed of 300 rpm, and different milling times, namely, 15, 25, 35, 45, and 60 min. Molar concentration, [Al]/[Zn] atomic ratio, deposition temperature and time, were kept at constant values; 0.2 M, 3 at.%, 475 °C, and 10 min, respectively. Results show that, under the same deposition conditions, electrical resistivities of ZnO:Al thin films deposited from milled precursors are lower than those obtained for films deposited from unmilled precursors. X-ray diffraction analysis revealed that all films display a polycrystalline structure, fitting well with the hexagonal wurtzite structure. Changes in surface morphology were observed by scanning electron microscopy (SEM as well, since films deposited from unmilled precursors show triangular shaped grains, in contrast to films deposited from 15 and 35 min milled precursors that display thin slices with hexagonal shapes. The use of milled precursors to prepare starting solutions for depositing ZnO:Al thin films by ultrasonic pyrolysis influences their physical properties.

  3. Aluminum-doped zinc oxide sol–gel thin films: Influence of the sol's water content on the resistivity

    Energy Technology Data Exchange (ETDEWEB)

    Nehmann, Julia B., E-mail: nehmann@isfh.de [Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany); Ehrmann, Nicole; Reineke-Koch, Rolf [Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany); Bahnemann, Detlef W. [Institute for Technical Chemistry, Gottfried Wilhelm Leibniz University Hannover, Callinstrasse 3A, 30167 Hannover (Germany)

    2014-04-01

    Thin films of indium tin oxide (ITO) have gained substantial interest due to their optical and electrical properties. Since ITO is an expensive material and indium is a rare element, considerable attempts have been made to replace it by, e.g., aluminum-doped zinc oxide (ZnO:Al). The production of ZnO:Al is less cost-intensive, especially if the sol–gel technique is applied, while its properties are comparable to those of ITO. In this study, we demonstrate that the electrical properties of ZnO:Al thin films can be improved considerably by the addition of small amounts of ultrapure water to the dip coating solution during the preparation. The lowest resistivity obtained with a film prepared from a sol containing 0.2 M water is 2.8·10{sup −3Ω}cm. Optical modeling thus indicates an improvement of the free carrier mobility of films prepared from sols in the presence of additional water. The films prepared have an average thickness of 340 nm and a solar transmittance above 85% after annealing in a forming gas atmosphere. Clearly, the addition of water to the sol has a positive impact on the resistivity of the final ZnO:Al thin film. We suggest the observed increase of the free carrier mobility to be due to an improved electron transfer at the grain boundaries between the spherical nanoparticles. - Highlights: • We prepared ZnO:Al thin films with additional water in the sol by dip coating. • We found a positive impact of the water in the sol on the resistivity of the film. • The free carrier concentration and mobility increased with additional 0.2 M water. • The refractive indices demonstrate a denser structure related to the water content.

  4. Aluminum-doped zinc oxide sol–gel thin films: Influence of the sol's water content on the resistivity

    International Nuclear Information System (INIS)

    Thin films of indium tin oxide (ITO) have gained substantial interest due to their optical and electrical properties. Since ITO is an expensive material and indium is a rare element, considerable attempts have been made to replace it by, e.g., aluminum-doped zinc oxide (ZnO:Al). The production of ZnO:Al is less cost-intensive, especially if the sol–gel technique is applied, while its properties are comparable to those of ITO. In this study, we demonstrate that the electrical properties of ZnO:Al thin films can be improved considerably by the addition of small amounts of ultrapure water to the dip coating solution during the preparation. The lowest resistivity obtained with a film prepared from a sol containing 0.2 M water is 2.8·10−3Ωcm. Optical modeling thus indicates an improvement of the free carrier mobility of films prepared from sols in the presence of additional water. The films prepared have an average thickness of 340 nm and a solar transmittance above 85% after annealing in a forming gas atmosphere. Clearly, the addition of water to the sol has a positive impact on the resistivity of the final ZnO:Al thin film. We suggest the observed increase of the free carrier mobility to be due to an improved electron transfer at the grain boundaries between the spherical nanoparticles. - Highlights: • We prepared ZnO:Al thin films with additional water in the sol by dip coating. • We found a positive impact of the water in the sol on the resistivity of the film. • The free carrier concentration and mobility increased with additional 0.2 M water. • The refractive indices demonstrate a denser structure related to the water content

  5. Ultrathin aluminum oxide films: Al-sublattice structure and the effect of substrate on ad-metal adhesion

    Energy Technology Data Exchange (ETDEWEB)

    JENNISON,DWIGHT R.; BOGICEVIC,ALEXANDER

    2000-03-06

    First principles density-functional slab calculations are used to study 5 {angstrom} (two O-layer) Al{sub 2}O{sub 3} films on Ru(0001) and Al(111). Using larger unit cells than in a recent study, it is found that the lowest energy stable film has an even mix of tetrahedral (t) and octahedral (o) site Al ions, and thus most closely resembles the {kappa}-phase of bulk alumina. Here, alternating zig-zag rows of t and o occur within the surface plane, resulting in a greater average lateral separation of the Al-ions than with pure t or o. A second structure with an even mix of t and o has also been found, consisting of alternating stripes. These patterns mix easily, can exist in three equivalent directions on basal substrates, and can also be displaced laterally, suggesting a mechanism for a loss of long-range order in the Al-sublattice. While the latter would cause the film to appear amorphous in diffraction experiments, local coordination and film density are little affected. On a film supported by rigid Ru(0001), overlayers of Cu, Pd, and Pt bind similarly as on bulk truncated {alpha}-Al{sub 2}O{sub 3}(0001). However, when the film is supported by soft Al(111), the adhesion of Cu, Pd, and Pt metal overlayers is significantly increased: Oxide-surface Al atoms rise so only they contact the overlayer, while substrate Al metal atoms migrate into the oxide film. Thus the binding energy of metal overlayers is strongly substrate dependent, and these numbers for the above Pd-overlayer systems bracket a recent experimentally derived value for a film on NiAl(110).

  6. Air-Impregnated Nanoporous Anodic Aluminum Oxide Layers for Enhancing the Corrosion Resistance of Aluminum.

    Science.gov (United States)

    Jeong, Chanyoung; Lee, Junghoon; Sheppard, Keith; Choi, Chang-Hwan

    2015-10-13

    Nanoporous anodic aluminum oxide layers were fabricated on aluminum substrates with systematically varied pore diameters (20-80 nm) and oxide thicknesses (150-500 nm) by controlling the anodizing voltage and time and subsequent pore-widening process conditions. The porous nanostructures were then coated with a thin (only a couple of nanometers thick) Teflon film to make the surface hydrophobic and trap air in the pores. The corrosion resistance of the aluminum substrate was evaluated by a potentiodynamic polarization measurement in 3.5 wt % NaCl solution (saltwater). Results showed that the hydrophobic nanoporous anodic aluminum oxide layer significantly enhanced the corrosion resistance of the aluminum substrate compared to a hydrophilic oxide layer of the same nanostructures, to bare (nonanodized) aluminum with only a natural oxide layer on top, and to the latter coated with a thin Teflon film. The hydrophobic nanoporous anodic aluminum oxide layer with the largest pore diameter and the thickest oxide layer (i.e., the maximized air fraction) resulted in the best corrosion resistance with a corrosion inhibition efficiency of up to 99% for up to 7 days. The results demonstrate that the air impregnating the hydrophobic nanopores can effectively inhibit the penetration of corrosive media into the pores, leading to a significant improvement in corrosion resistance. PMID:26393523

  7. Air-Impregnated Nanoporous Anodic Aluminum Oxide Layers for Enhancing the Corrosion Resistance of Aluminum.

    Science.gov (United States)

    Jeong, Chanyoung; Lee, Junghoon; Sheppard, Keith; Choi, Chang-Hwan

    2015-10-13

    Nanoporous anodic aluminum oxide layers were fabricated on aluminum substrates with systematically varied pore diameters (20-80 nm) and oxide thicknesses (150-500 nm) by controlling the anodizing voltage and time and subsequent pore-widening process conditions. The porous nanostructures were then coated with a thin (only a couple of nanometers thick) Teflon film to make the surface hydrophobic and trap air in the pores. The corrosion resistance of the aluminum substrate was evaluated by a potentiodynamic polarization measurement in 3.5 wt % NaCl solution (saltwater). Results showed that the hydrophobic nanoporous anodic aluminum oxide layer significantly enhanced the corrosion resistance of the aluminum substrate compared to a hydrophilic oxide layer of the same nanostructures, to bare (nonanodized) aluminum with only a natural oxide layer on top, and to the latter coated with a thin Teflon film. The hydrophobic nanoporous anodic aluminum oxide layer with the largest pore diameter and the thickest oxide layer (i.e., the maximized air fraction) resulted in the best corrosion resistance with a corrosion inhibition efficiency of up to 99% for up to 7 days. The results demonstrate that the air impregnating the hydrophobic nanopores can effectively inhibit the penetration of corrosive media into the pores, leading to a significant improvement in corrosion resistance.

  8. NaCl盐膜对铝青铜高温氧化行为的影响%Effect of NaCl Film on Oxidation Behavior of Aluminum Bronze at High Temperature

    Institute of Scientific and Technical Information of China (English)

    李占鑫

    2009-01-01

    采用金相检验、X射线衍射、扫描电镜/能谱及热重分析法研究了涂有NaCl盐膜的铝青铜在700~900℃的氧化行为.结果表明,在NaCl盐膜的作用下,铝青铜中的铝较铜先腐蚀,所形成的氧化膜结构疏松,易开裂和剥落,从而加速铝的氧化过程.此外,还讨论了NaCl加速铝青铜氧化的机制.%The oxidation behavior of aluminum bronze coated with a NaCl film was studied by means of metallosco-py,XRD,SEM/EDS and thermogravimetry. The results show that because of the effect of NaCl film the aluminum will be eroded earlier than the copper in aluminum bronze and the oxide film produced will be loose and easy to crack and spall, with the oxidation of aluminum bronze accelerated. In addition, the mechanism for NaCl film to ac-celerate the oxidation of aluminum bronze was discussed, too.

  9. Optimization of aluminum-doped zinc oxide films deposited at low temperature by radio-frequency sputtering on flexible substrates for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B. [Grupo de Ingenieria Fotonica (GRIFO), Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares, Madrid (Spain)

    2010-02-15

    Aluminum-doped zinc oxide films were deposited at 100 C on polyethylene terephthalate by radio-frequency magnetron sputtering. The sputtering parameters such as RF power and Argon working pressure were varied from 25 to 125 W and from 1.1 to 0.2 Pa, respectively. The structural properties of as-deposited films were analysed by X-ray diffraction, showing that all the deposited films were polycrystalline, with hexagonal structure and a strong preferred c-axis orientation (0 0 2). Full width at half maximum and grain sizes were around 0.27 and ranged from 24 to 32 nm, respectively. The strain state of the samples was also estimated from X-ray diffraction measurements, obtaining compressive stresses from 0.29 to 0.05 GPa. Resistivity as low as 1.1 x 10{sup -3} {omega} cm was achieved for the film deposited at 75 W and 0.2 Pa, sample that showed a low strain state of -0.06 GPa. High optical transmittance ({proportional_to}80%) was exhibited when films were deposited at RF powers below 100 W. Band gap energies ranged from 3.36 to 3.39 eV and a refractive index of 1.80{+-}0.05, constant in the visible region, was also obtained. (author)

  10. Aluminum doped nickel oxide thin film with improved electrochromic performance from layered double hydroxides precursor in situ pyrolytic route

    Science.gov (United States)

    Shi, Jingjing; Lai, Lincong; Zhang, Ping; Li, Hailong; Qin, Yumei; Gao, Yuanchunxue; Luo, Lei; Lu, Jun

    2016-09-01

    Electrochromic materials with unique performance arouse great interest on account of potential application values in smart window, low-power display, automobile anti-glare rearview mirror, and e-papers. In this paper, high-performing Al-doped NiO porous electrochromic film grown on ITO substrate has been prepared via a layered double hydroxides(LDHs) precursor in situ pyrolytic route. The Al3+ ions distributed homogenously within the NiO matrix can significantly influence the crystallinity of Ni-Al LDH and NiO:Al3+ films. The electrochromic performance of the films were evaluated by means of UV-vis absorption spectroscopy, cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and chronoamperometry(CA) measurements. In addition, the ratio of Ni3+/Ni2+ also varies with Al content which can lead to different electrochemical performances. Among the as-prepared films, NiO film prepared from Ni-Al (19:1) LDH show the best electrochromic performance with a high transparency of 96%, large optical modulation range (58.4%), fast switching speed (bleaching/coloration times are 1.8/4.2 s, respectively) and excellent durability (30% decrease after 2000 cycles). The improved performance was owed to the synergy of large NiO film specific surface area and porous morphology, as well as Al doping stifled the formation of Ni3+ making bleached state more pure. This LDHs precursor pyrolytic method is simple, low-cost and environmental benign and is feasible for the preparation of NiO:Al and other Al-doped oxide thin film.

  11. Effect of Pore Size and Film Thickness on Gold-Coated Nanoporous Anodic Aluminum Oxide Substrates for Surface-Enhanced Raman Scattering Sensor.

    Science.gov (United States)

    Kassu, Aschalew; Farley, Carlton; Sharma, Anup; Kim, Wonkyu; Guo, Junpeng

    2015-11-30

    A sensitive surface enhanced Raman scattering chemical sensor is demonstrated by using inexpensive gold-coated nanoporous anodic aluminum oxide substrates. To optimize the performance of the substrates for sensing by the Surface-enhanced Raman scattering (SERS) technique, the size of the nanopores is varied from 18 nm to 150 nm and the gold film thickness is varied from 30 nm to 120 nm. The sensitivity of gold-coated nanoporous surface enhanced Raman scattering sensor is characterized by detecting low concentrations of Rhodamine 6G laser dye molecules. The morphology of the SERS substrates is characterized by atomic force microscopy. Optical properties of the nanoporous SERS substrates including transmittance, reflectance, and absorbance are also investigated. Relative signal enhancement is plotted for a range of substrate parameters and a detection limit of 10(-6) M is established.

  12. Effect of Pore Size and Film Thickness on Gold-Coated Nanoporous Anodic Aluminum Oxide Substrates for Surface-Enhanced Raman Scattering Sensor

    Directory of Open Access Journals (Sweden)

    Aschalew Kassu

    2015-11-01

    Full Text Available A sensitive surface enhanced Raman scattering chemical sensor is demonstrated by using inexpensive gold-coated nanoporous anodic aluminum oxide substrates. To optimize the performance of the substrates for sensing by the Surface-enhanced Raman scattering (SERS technique, the size of the nanopores is varied from 18 nm to 150 nm and the gold film thickness is varied from 30 nm to 120 nm. The sensitivity of gold-coated nanoporous surface enhanced Raman scattering sensor is characterized by detecting low concentrations of Rhodamine 6G laser dye molecules. The morphology of the SERS substrates is characterized by atomic force microscopy. Optical properties of the nanoporous SERS substrates including transmittance, reflectance, and absorbance are also investigated. Relative signal enhancement is plotted for a range of substrate parameters and a detection limit of 10−6 M is established.

  13. Oxidation kinetics of aluminum diboride

    Science.gov (United States)

    Whittaker, Michael L.; Sohn, H. Y.; Cutler, Raymond A.

    2013-11-01

    The oxidation characteristics of aluminum diboride (AlB2) and a physical mixture of its constituent elements (Al+2B) were studied in dry air and pure oxygen using thermal gravimetric analysis to obtain non-mechanistic kinetic parameters. Heating in air at a constant linear heating rate of 10 °C/min showed a marked difference between Al+2B and AlB2 in the onset of oxidation and final conversion fraction, with AlB2 beginning to oxidize at higher temperatures but reaching nearly complete conversion by 1500 °C. Kinetic parameters were obtained in both air and oxygen using a model-free isothermal method at temperatures between 500 and 1000 °C. Activation energies were found to decrease, in general, with increasing conversion for AlB2 and Al+2B in both air and oxygen. AlB2 exhibited O2-pressure-independent oxidation behavior at low conversions, while the activation energies of Al+2B were higher in O2 than in air. Differences in the composition and morphology between oxidized Al+2B and AlB2 suggested that Al2O3-B2O3 interactions slowed Al+2B oxidation by converting Al2O3 on aluminum particles into a Al4B2O9 shell, while the same Al4B2O9 developed a needle-like morphology in AlB2 that reduced oxygen diffusion distances and increased conversion. The model-free kinetic analysis was critical for interpreting the complex, multistep oxidation behavior for which a single mechanism could not be assigned. At low temperatures, moisture increased the oxidation rate of Al+2B and AlB2, but both appear to be resistant to oxidation in cool, dry environments.

  14. Oxidation dynamics of aluminum nanorods

    International Nuclear Information System (INIS)

    Aluminum nanorods (Al-NRs) are promising fuels for pyrotechnics due to the high contact areas with oxidizers, but their oxidation mechanisms are largely unknown. Here, reactive molecular dynamics simulations are performed to study thermally initiated burning of oxide-coated Al-NRs with different diameters (D = 26, 36, and 46 nm) in oxygen environment. We found that thinner Al-NRs burn faster due to the larger surface-to-volume ratio. The reaction initiates with the dissolution of the alumina shell into the molten Al core to generate heat. This is followed by the incorporation of environmental oxygen atoms into the resulting Al-rich shell, thereby accelerating the heat release. These results reveal an unexpectedly active role of the alumina shell as a “nanoreactor” for oxidation

  15. Influence of composition and processing parameters on the properties of solution-processed aluminum phosphate oxide (AlPO) thin films

    Science.gov (United States)

    Norelli, Kevin M.; Plassmeyer, Paul N.; Woods, Keenan N.; Glassy, Benjamin A.; Knutson, Christopher C.; Beekman, Matt; Page, Catherine J.

    2016-05-01

    The effects of precursor solution concentration, composition, and spin-processing parameters on the thickness and electrical properties of ultra-smooth aluminum oxide phosphate (Al2O3-3x(PO4)2x or "AlPO") thin films prepared using aqueous solutions are reported. Compositions were verified by electron probe micro-analysis and range from Al2O1.5(PO4) to AlPO4 (x = P:Al from 0.5 to 1.0). Film thicknesses were determined using X-ray reflectivity measurements and were found to depend systematically on solution concentration, P:Al ratio, and spin-speed. Metal-insulator-semiconductor devices were fabricated to determine electrical properties as a function of composition. As the P:Al ratio increased from 0.5 to 1.0, the dielectric constant decreased from 6.0 to 4.6, leakage currents increased from 0.45 to 65 nA cm-2 at 1 MV cm-1 and dielectric breakdown (defined as leakage currents >10 μA cm-2) decreased from 9.74 to 2.84 MV cm-1. These results establish composition, concentration, and spin-speed for the production of AlPO films with targeted thicknesses and electrical properties.

  16. Oxidation kinetics of aluminum diboride

    International Nuclear Information System (INIS)

    The oxidation characteristics of aluminum diboride (AlB2) and a physical mixture of its constituent elements (Al+2B) were studied in dry air and pure oxygen using thermal gravimetric analysis to obtain non-mechanistic kinetic parameters. Heating in air at a constant linear heating rate of 10 °C/min showed a marked difference between Al+2B and AlB2 in the onset of oxidation and final conversion fraction, with AlB2 beginning to oxidize at higher temperatures but reaching nearly complete conversion by 1500 °C. Kinetic parameters were obtained in both air and oxygen using a model-free isothermal method at temperatures between 500 and 1000 °C. Activation energies were found to decrease, in general, with increasing conversion for AlB2 and Al+2B in both air and oxygen. AlB2 exhibited O2-pressure-independent oxidation behavior at low conversions, while the activation energies of Al+2B were higher in O2 than in air. Differences in the composition and morphology between oxidized Al+2B and AlB2 suggested that Al2O3–B2O3 interactions slowed Al+2B oxidation by converting Al2O3 on aluminum particles into a Al4B2O9 shell, while the same Al4B2O9 developed a needle-like morphology in AlB2 that reduced oxygen diffusion distances and increased conversion. The model-free kinetic analysis was critical for interpreting the complex, multistep oxidation behavior for which a single mechanism could not be assigned. At low temperatures, moisture increased the oxidation rate of Al+2B and AlB2, but both appear to be resistant to oxidation in cool, dry environments. - Graphical abstract: Isothermal kinetic data for AlB2 in air, showing a constantly decreasing activation energy with increasing conversion. Model-free analysis allowed for the calculation of global kinetic parameters despite many simultaneous mechanisms occurring concurrently. (a) Time–temperature plots, (b) conversion as a function of time, (c) Arrhenius plots used to calculate activation energies, and (d) activation energy

  17. Oxide film microstructure: the link between surface preparation processes and strength/durability of adhesively bonded aluminum. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Hsia, K. Jimmy; Pearlstein, Arne J.; Scheeline, Alexander; Shang, Jian Ku

    2000-11-30

    Strength and durability of adhesive bonding of aluminum alloys structures are intrinsically determined by the surface microstructures and interfacial failure micromechanisms. The current project presents a multidisciplinary approach to addressing critical issues controlling the strength and durability of adhesive bonds of aluminum alloys. Three main thrust areas have been pursued: surface treatment technology development to achieve desirable surface microstructures; relationship between surface structure and properties of adhesive bonds; and failure mechanisms of adhesively bonded components.

  18. Optical Anisotropy and Porosity of Anodic Aluminum Oxide Characterized by Spectroscopic Ellipsometry

    NARCIS (Netherlands)

    Kooij, E. Stefan; Wormeester, Herbert; Galca, Aurelian C.; Poelsema, Bene

    2003-01-01

    Anodic oxidation of aluminum results in a mesoporous oxide film. The thin-film geometry of our samples enables straightforward optical modeling of ellipsometry spectra of fully anodized films, using only three physically relevant parameters. The system of randomly distributed, but aligned cylindrica

  19. Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices

    Directory of Open Access Journals (Sweden)

    Hui-Ying Li

    2015-02-01

    Full Text Available Preparation of dense alumina (Al2O3 thin film through atomic layer deposition (ALD provides a pathway to achieve the encapsulation of organic light emitting devices (OLED. Unlike traditional ALD which is usually executed at higher reaction n temperatures that may affect the performance of OLED, this application discusses the development on preparation of ALD thin film at a low temperature. One concern of ALD is the suppressing effect of ambient temperature on uniformity of thin film. To mitigate this issue, the pumping time in each reaction cycle was increased during the preparation process, which removed reaction byproducts and inhibited the formation of vacancies. As a result, the obtained thin film had both high uniformity and density properties, which provided an excellent encapsulation performance. The results from microstructure morphology analysis, water vapor transmission rate, and lifetime test showed that the difference in uniformity between thin films prepared at low temperatures, with increased pumping time, and high temperatures was small and there was no obvious influence of increased pumping time on light emitting performance. Meanwhile, the permeability for water vapor of the thin film prepared at a low temperature was found to reach as low as 1.5 × 10−4 g/(m2·day under ambient conditions of 25 °C and 60% relative humidity, indicating a potential extension in the lifetime for the OLED.

  20. THE BAND STRUCTURE AND WORK FUNCTION OF TRANSPARENT CONDUCTING ALUMINUM AND MANGANESE CO-DOPED ZINC OXIDE FILMS

    Institute of Scientific and Technical Information of China (English)

    H.T. Cao; Z.L. Pei; X.B. Zhang; J. Gong; C. Sun; L.S. Wen

    2005-01-01

    Al and Mn co-doped-ZnO films have been prepared at room temperature by DC reactive magnetron sputtering technique. The optical absorption coefficient, apparent and fundamental band gap, and work function of the films have been investigated using optical spectroscopy, band structure analyses and ultraviolet photoelectron spectroscopy (UPS). ZnO films have direct allowed transition band structure, which has been confirmed by the character of the optical absorption coefficient. The apparent band gap has been found directly proportional to N2/3, showing that the effect of Burstein-Moss shift on the band gap variations dominates over the many-body effect. With only standard cleaning protocols, the work function of ZnO: (Al, Mn) and ZnO: Al films have been measured to be 4.26 and 4.21eV, respectively. The incorporation of Mn element into the matrix of ZnO, as a relatively deep donor, can remove some electrons from the conduction band and deplete the density of occupied states at the Fermi energy, which causes a loss in measured photoemission intensity and an increase in the surface work function. Based on the band gap and work function results, the energy band diagram of the ZnO: (Al, Mn)film near its surface is also given.

  1. Nanoscale aluminum concaves for light-trapping in organic thin-films

    DEFF Research Database (Denmark)

    Goszczak, Arkadiusz Jaroslaw; Adam, Jost; Cielecki, Pawel Piotr;

    2016-01-01

    Anodic aluminum oxide (AAO) templates, fabricated from oxalic acid and phosphoric acid, lead to non-periodic nanoscale concave structures in their underlying aluminum layer, which are investigated for their field-enhancement properties by applying a thin-film polymer coating based laser ablation...

  2. Electrochemical fabrication of CdS/Co nanowire arrays in porous aluminum oxide templates

    CERN Document Server

    Yoon, C H

    2002-01-01

    A procedure for preparing semiconductor/metal nanowire arrays is described, based on a template method which entails electrochemical deposition into nanometer-wide parallel pores of anodic aluminum oxide films on aluminum. Aligned CdS/Co heterostructured nanowires have been prepared by ac electrodeposition in the anodic aluminum oxide templates. By varying the preparation conditions, a variety of CdS/Co nanowire arrays were fabricated, whose dimensional properties could be adjusted.

  3. Substrate biasing effect on the physical properties of reactive RF-magnetron-sputtered aluminum oxide dielectric films on ITO glasses.

    Science.gov (United States)

    Liang, Ling Yan; Cao, Hong Tao; Liu, Quan; Jiang, Ke Min; Liu, Zhi Min; Zhuge, Fei; Deng, Fu Ling

    2014-02-26

    High dielectric constant (high-k) Al2O3 thin films were prepared on ITO glasses by reactive RF-magnetron sputtering at room temperature. The effect of substrate bias on the subband structural, morphological, electrode/Al2O3 interfacial and electrical properties of the Al2O3 films is systematically investigated. An optical method based on spectroscopic ellipsometry measurement and modeling is adopted to probe the subband electronic structure, which facilitates us to vividly understand the band-tail and deep-level (4.8-5.0 eV above the valence band maximum) trap states. Well-selected substrate biases can suppress both the trap states due to promoted migration of sputtered particles, which optimizes the leakage current density, breakdown strength, and quadratic voltage coefficient of capacitance. Moreover, high porosity in the unbiased Al2O3 film is considered to induce the absorption of atmospheric moisture and the consequent occurrence of electrolysis reactions at electrode/Al2O3 interface, as a result ruining the electrical properties. PMID:24490685

  4. Orientationally ordered ridge structures of aluminum films on hydrogen terminated silicon

    DEFF Research Database (Denmark)

    Quaade, Ulrich; Pantleon, Karen

    2006-01-01

    > directions on the silicon substrate. The ridge structure appears when the film thickness is above 500 nm, and increasing the film thickness makes the structure more distinct. Anodic oxidation enhances the structure even further. X-ray diffraction indicates that grains in the film have mostly (110) facets......Films of aluminum deposited onto Si(100) substrates show a surface structure of parallel ridges. On films deposited on oxidized silicon substrates the direction of the ridges is arbitrary, but on films deposited on hydrogen-terminated Si(100) the ridges are oriented parallel to the < 110...

  5. Atomic layer deposited aluminum oxide barrier coatings for packaging materials

    Energy Technology Data Exchange (ETDEWEB)

    Hirvikorpi, Terhi, E-mail: terhi.hirvikorpi@vtt.f [Oy Keskuslaboratorio - Centrallaboratorium Ab (KCL), P.O. Box 70, FI-02151 Espoo (Finland); Vaehae-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.f [Oy Keskuslaboratorio - Centrallaboratorium Ab (KCL), P.O. Box 70, FI-02151 Espoo (Finland); Mustonen, Tuomas, E-mail: tuomas.mustonen@vtt.f [Oy Keskuslaboratorio - Centrallaboratorium Ab (KCL), P.O. Box 70, FI-02151 Espoo (Finland); Iiskola, Eero, E-mail: eero.iiskola@kcl.f [Oy Keskuslaboratorio - Centrallaboratorium Ab (KCL), P.O. Box 70, FI-02151 Espoo (Finland); Karppinen, Maarit, E-mail: maarit.karppinen@tkk.f [Laboratory of Inorganic Chemistry, Department of Chemistry, Helsinki University of Technology, P.O. Box 6100, FI-02015 TKK (Finland)

    2010-03-01

    Thin aluminum oxide coatings have been deposited at a low temperature of 80 {sup o}C on various uncoated papers, polymer-coated papers and boards and plain polymer films using the atomic layer deposition (ALD) technique. The work demonstrates that such ALD-grown Al{sub 2}O{sub 3} coatings efficiently enhance the gas-diffusion barrier performance of the studied porous and non-porous materials towards oxygen, water vapor and aromas.

  6. Formation of Al-Si Composite Oxide Film by Hydrolysis Precipitation and Anodizing

    Institute of Scientific and Technical Information of China (English)

    Zhe-Sheng Feng; Ying-Jie Xia; Jia Ding; Jin-Ju Chen

    2007-01-01

    This paper presents a new technique in the high dielectric constant composite oxide film preparation.On the basis of nanocompsite high dielectric constant aluminum oxide film growth technology, a new idea of adulterating Si oxide species into the aluminum composite film was proposed. As a result, the specific capacitance and withstanding voltage of the composite oxide film formed at the anodizing voltage of 20V are enhanced, and the leakage current of the aluminum composite oxide film is reduced through incorporation of Si oxide species.

  7. Formulation and method for preparing gels comprising hydrous aluminum oxide

    Science.gov (United States)

    Collins, Jack L.

    2014-06-17

    Formulations useful for preparing hydrous aluminum oxide gels contain a metal salt including aluminum, an organic base, and a complexing agent. Methods for preparing gels containing hydrous aluminum oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including aluminum, an organic base, and a complexing agent.

  8. Nanoscale aluminum concaves for light-trapping in organic thin-films

    Science.gov (United States)

    Goszczak, Arkadiusz Jarosław; Adam, Jost; Cielecki, Paweł Piotr; Fiutowski, Jacek; Rubahn, Horst-Günter; Madsen, Morten

    2016-07-01

    Anodic aluminum oxide (AAO) templates, fabricated from oxalic acid and phosphoric acid, lead to non-periodic nanoscale concave structures in their underlying aluminum layer, which are investigated for their field-enhancement properties by applying a thin-film polymer coating based laser ablation technique. Local ablation spots, corresponding to field enhancement on the ridge edges of the aluminum concave nanostructures, are observed in surface-covering polymer films, and confirmed with FDTD studies. The field enhancement leads to improved light absorption in the applied polymer layers, which may be used as an efficient method for enhancing the power conversion efficiency of organic solar cells.

  9. Aluminum Oxide Formation On Fecral Catalyst Support By Electro-Chemical Coating

    Directory of Open Access Journals (Sweden)

    Yang H.S.

    2015-06-01

    Full Text Available FeCrAl is comprised essentially of Fe, Cr, Al and generally considered as metallic substrates for catalyst support because of its advantage in the high-temperature corrosion resistance, high mechanical strength, and ductility. Oxidation film and its adhesion on FeCrAl surface with aluminum are important for catalyst life. Therefore various appropriate surface treatments such as thermal oxidation, Sol, PVD, CVD has studied. In this research, PEO (plasma electrolytic oxidation process was applied to form the aluminum oxide on FeCrAl surface, and the formed oxide particle according to process conditions such as electric energy and oxidation time were investigated. Microstructure and aluminum oxide particle on FeCrAl surface after PEO process was observed by FE-SEM and EDS with element mapping analysis. The study presents possibility of aluminum oxide formation by electro-chemical coating process without any pretreatment of FeCrAl.

  10. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1015 Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide is a blue-green pigment obtained by calcining...

  11. Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

    Science.gov (United States)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2015-02-01

    In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

  12. Self-lubricated Array Film of Amorphous Carbon Nanorods on an Aluminum Substrate

    Institute of Scientific and Technical Information of China (English)

    JIANGChun-xi; TUJiang-ping; GUOShao-yi; FUMing-fu; ZHAOXin-bing

    2004-01-01

    A self-lubricated array film of amorphous carbon nanorods was prepared by chemical catalytic pyrolysis of acetylene on the anodic aluminum oxide membrane fabricated by two-step anodization of aluminum. The tribological properties of the array film of amorphous carbon nanorods in ambient air were investigated using a ball-on-disk tester at applied loads range from 245 mN to 1960 mN at a sliding velocity of 0.2 m/s. The self-lubricated array film exhibited a small value of the friction coefficient as well as good wear resistance. The friction coefficient of array film of amorphous carbon nanorods decreased gradually with increasing the applied load. The approach proposed demonstrated a new efficient route towards enhanced the friction and wear performances of aluminum.

  13. Effect of substrate on the nucleation and growth of aluminum films deposited from methylpyrrolidine alane

    International Nuclear Information System (INIS)

    Methylpyrrolidine alane complex was used to deposit aluminum films on various types of substrates in a low pressure chemical vapor deposition reactor. The films grow easily on metallic and transition metal oxide surfaces, but not on any other tested semiconductor and dielectric substrates below 200 deg. C, showing strong substrate dependency. The free energies of precursor adsorption, surface dissociation reaction and product desorption, as well as the film wettability to substrate are among the key factors which affect the energy barrier for nucleation or deposition selectivity. In general, a metal substrate can enhance nucleation because it catalyzes the surface reactions and bonds strongly with aluminum. The oxidation-reduction reaction may occur between the precursor and substrate on a metal oxide surface. The reduced metal sites can be the seed nuclei and are possibly responsible for Al growth on the surfaces of transition metal oxides

  14. Formation of Anodic Aluminum Oxide with Branched and Meshed Pores.

    Science.gov (United States)

    Kim, Byeol; Lee, Jin Seok

    2016-06-01

    Anodic aluminum oxide (AAO), with a self-ordered hexagonal array, is important for various applications in nanofabrication including as the fabrication of nanotemplates and other nanostructures. With the consideration, there have been many efforts to control the characteristic parameters of porous anodic alumina by adjustment of the anodizing conditions such as the electrolyte, temperature, applied potential, and Al purity. In particular, impurities in Al are changing the morphology of an alumina film; however, the formation mechanism has not yet been explained. In this work, we anodized a high purity (99.999%, Al(high)) and low purity (99.8%, Al(low)) aluminum foil by a two-step anodization process in an oxalic acid solution or phosphoric acid. It was found that the purity of aluminum foil has influenced the morphology of the alumina film resulting in branched and meshed pores. Also, electrochemical analysis indicated that the branched and meshed pores in the low-purity Al foil formed by the presence of impurities. Impurities act as defects and change the general growth mechanism for pore formation by inducing an electric field imbalance during anodization. This work contributes to the research field of topographical chemistry and applied fields including nanofabrication. PMID:27427755

  15. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  16. Influence of Ag thickness of aluminum-doped ZnO/Ag/aluminum-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Hung-Wei, E-mail: hwwu@mail.ksu.edu.tw [Department of Computer and Communication, Kun Shan University, No. 949, Dawan Rd., Yongkang Dist., Tainan City 710, Taiwan (China); Yang, Ru-Yuan [Graduate Institute of Materials Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China); Hsiung, Chin-Min; Chu, Chien-Hsun [Department of Mechanical Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China)

    2012-10-01

    Highly conducting aluminum-doped ZnO (30 nm)/Ag (5-15 nm)/aluminum-doped ZnO (30 nm) multilayer thin films were deposited on glass substrate by rf magnetron sputtering (for top/bottom aluminum-doped ZnO films) and e-beam evaporation (for Ag film). The transmittance is more than 70% for wavelengths above 400 nm with the Ag layer thickness of 10 nm. The resistivity is 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm, which can be decreased to 3.8 Multiplication-Sign 10{sup -5} {Omega}-cm with the increase of the Ag layer thickness to 15 nm. The Haacke figure of merit has been calculated for the films with the best value being 8 Multiplication-Sign 10{sup -3} {Omega}{sup -1}. It was shown that the multilayer thin films have potential for applications in optoelectronics. - Highlights: Black-Right-Pointing-Pointer High-quality Al-doped ZnO (AZO)/Ag/AZO Transparent Conducting Oxide films. Black-Right-Pointing-Pointer AZO films (30 nm) made by RF sputtering; E-beam evaporation for Ag film (5-15 nm). Black-Right-Pointing-Pointer Influence of Ag thickness on optical and electrical properties were analyzed. Black-Right-Pointing-Pointer High quality multilayer film with optimal intermediate Ag layer thickness of 10 nm. Black-Right-Pointing-Pointer 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm resistivity, 91.89% transmittance at 470 nm obtained and reproducible.

  17. Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and α-Si layers were deposited by magnetron sputtering respectively and annealed at 480°C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between γ-Al2O3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of γ-Al2O3, which was formed at the early stage of annealing.

  18. FRICTION PROPERTIES OF OIL-INFILTRATED POROUS AAO FILM ON AN ALUMINUM SUBSTRATE

    Institute of Scientific and Technical Information of China (English)

    C.X. Jiang; J.P. Tu; S.Y. Guo; M.F. Fu; X.B. Zhao

    2005-01-01

    The porous anodic aluminum oxide (AAO) film on a pure aluminum substrate was prepared by a two-step anodization in a 0.3M oxalic acid solution and pore-enlargement treatment in the phosphoric acid aqueous solution at 50℃. The diameter of highly ordered pore on the AAO film was about 90nm, and the thickness of the AAO film was 3μm. The mineral oil was infiltrated in the ordered nanometer sized pores of AAO film on an aluminum substrate due to the capillarity effect. The friction coefficient was measured using a ball-on-disk tribotester.The tests were conducted at loads range from 490 to 2450mN and at sliding velocities beably improved the wear resistance. As compared to the porous AAO film, the oil-infiltrated specimen had low friction coefficient. With increasing the applied load and sliding velocity,the friction coefficient of the oil-infiltrated film decreased. It indicates that the oil-infiltrated AAO film produced a new way to modify the friction and wear of aluminum alloy.

  19. 阳极氧化法制备多孔氧化铝膜的形成过程研究%Investigation on the growth sequence of porous anodic aluminum oxide films by two-step anodization

    Institute of Scientific and Technical Information of China (English)

    刘海凤; 路丙强; 梁冬林; 魏水强; 苟凯佩; 王凡; 文衍宣

    2012-01-01

    采用阳极氧化技术,研究了电压对多孔氧化铝膜生长过程的影响.使用扫描电镜( SEM)对在草酸-水-乙醇体系中形成的多孔氧化铝膜形貌进行观测.结果表明,在第二步氧化过程中,在40V氧化电压下,多孔氧化铝膜的有序度和孔径随反应时间延长而降低;在80 V下,经过长时间反应,AAO膜表面腐蚀严重,难以获得平整的多孔结构.预氧化过程所形成的薄氧化层有效保护了多孔氧化铝表面,同时对多孔结构具有短距离诱导作用.改变氧化电压、电解质浓度和反应时间,有序孔排列的结构参数也有所改变.高电场下,孔道的相互作用促进了其生长分化,形成了两种不同的孔道结构.%The detailed growth processes of porous anodic aluminum oxide films influenced by the applied voltage were studied via anodization method. The appearance of the porous anodic aluminum oxide films formed in oxalic acid-water-ethanol solution was studied by SEM. At the second anodization step, the ordering degree and pore size of oxide films decreased at 40 V, while the rough surface of AAO by severe corrosion was obtained at 80 V. Whereas, the surface oxide layer generated by pre-anodization provided effective protection at the early stage of high-voltage anodization, and guided the formation of ordered pores array in short range. The structural parameters of ordered pores array were dependent on the applied voltage, electrolyte concentration and reaction time. At high applied voltage, the cause of interaction forces between neighboring pores enhances the differentiation of pore growth, and hence two different pores growth behaviors in the internal and surface of AAO membrane are observed.

  20. 铝掺杂氧化锌薄膜的扫描电镜形貌观察条件研究%Study:Conditions for Morphology of Aluminum-doped Zinc Oxide Thin Film by Scanning Electron Microscope

    Institute of Scientific and Technical Information of China (English)

    王琴; 张科; 胡子阳; 诸跃进

    2015-01-01

    In this paper, the morphology of transparent conductive aluminum-doped zinc oxide (AZO) thin film is observed using Hitach SU70 Scanning Electron Microscope(SEM). Based upon the characteristics of AZO thin film, the various testing conditions are investigated and the influence of a variety of testing conditions on the morphology of the film is discussed. The results indicate that the accelerating voltage is 5 kV, the work distance is 10mm, the detector is Mix-detector and the electronic strength is set at high mode. Satisfying all the conditions stated afore, the best SEM images will be obtained.%利用日立 SU70场发射扫描电镜对铝掺杂氧化锌(AZO)透明导电薄膜进行形貌观察。针对AZO 薄膜特点,使用多种测试条件探讨了不同测试条件对薄膜形貌的影响。通过测试结果对比,获得了测定薄膜形貌的最佳条件。结果显示:加速电压为5 kV,工作距离为10 mm,探测器为混合探测器(Mix),电子强度为 high 模式时,得到的扫描电镜图片最佳。

  1. Monolithic Approach to Oxide Dispersion Strengthened Aluminum Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Nassau Stern Company is investigating an approach for manufacturing oxide dispersion strengthened (ODS) aluminum in bulk rather than powder form. The approach...

  2. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  3. Titanium-zirconium-phosphonate hybrid film on 6061 aluminum alloy

    Institute of Scientific and Technical Information of China (English)

    Shuanghong WANG; Lei WANG; Changsheng LIU

    2011-01-01

    Three titanium-zirconium-phosphonate hybrid films were formed on AA6061 aluminum alloy by immersing in fluorotitanic acid and fluorozirconic acid based solution containing different phosphonic acids for protective coatings of aluminium alloy. The corrosion resistance of three hybrid films as the substitute for chromate film were evaluated and compared. The neutral salt spray test was explored,the immersion test was conducted and electrochemical test was also executed. The hybrid films exhibited well-pleasing corrosion resistance and adhesion to epoxy resin paints. It was found out that the hybrid films could efficiently be a substitute for chromate based primer over aluminium alloy.

  4. Alkaline oxide conversion coatings for aluminum alloys

    Energy Technology Data Exchange (ETDEWEB)

    Buchheit, R.G.

    1996-02-01

    Three related conversion coating methods are described that are based on film formation which occurs when aluminum alloys are exposed to alkaline Li salt solutions. Representative examples of the processing methods, resulting coating structure, composition and morphology are presented. The corrosion resistance of these coatings to aerated 0.5 M NaCl solution has been evaluated as a function of total processing time using electrochemical impedance spectroscopy (EIS). This evaluation shows that excellent corrosion resistance can be uniformly achieved using no more than 20 minutes of process time for 6061-T6. Using current methods a minimum of 80 minutes of process time is required to get marginally acceptable corrosion resistance for 2024-T3. Longer processing times are required to achieve uniformly good corrosion resistance.

  5. Plasma-enhanced Chemical Vapor Deposition of Aluminum Oxide Using Ultrashort Precursor Injection Pulses

    NARCIS (Netherlands)

    Dingemans, G.; M. C. M. van de Sanden,; Kessels, W. M. M.

    2012-01-01

    An alternative plasma-enhanced chemical vapor deposition (PECVD) method is developed and applied for the deposition of high-quality aluminum oxide (AlOx) films. The PECVD method combines a continuous plasma with ultrashort precursor injection pulses. We demonstrate that the modulation of the precurs

  6. Lithography-free transmission filters at ultraviolet frequencies using ultra-thin aluminum films

    Science.gov (United States)

    Li, Zhongyang; Butun, Serkan; Aydin, Koray

    2016-06-01

    Aluminum allows for significant plasmon responses in ultraviolet (UV) regime of spectrum, where conventional plasmonic materials such as silver and gold lack plasmonic behavior due to their inherent dissipative limitation from lower plasmon frequency and inter-band transition. Such UV plasmonic resonance based on aluminum nanostructures could be challenging due to the smaller feature size of nanoscale resonator and remarkable sensitivity to oxidization. Here we theoretically and experimentally demonstrate lithography-free transmission filters using triple layers of continuous ultra-thin Al and dielectric films. Our proposed transmission filter is a triple-layer Fabry-Perot cavity and operates from 2.5 to 5.5 eV with bandwidth down to 0.5 eV and transmission amplitude up to 50%. Such flat Al ultra-thin film coatings suggest the use of aluminum as low-cost UV filters and UV optoelectronics as well as structural coloring applications.

  7. Fabrication of Nanostructured PLGA Scaffolds Using Anodic Aluminum Oxide Templates

    CERN Document Server

    Hsueh, Cheng-Chih; Hsu, Shan-Hui; Hung, Huey-Shan

    2008-01-01

    PLGA (poly(lactic-co-glycolic acid)) is one of the most used biodegradable and biocompatible materials. Nanostructured PLGA even has great application potentials in tissue engineering. In this research, a fabrication technique for nanostructured PLGA membrane was investigated and developed. In this novel fabrication approach, an anodic aluminum oxide (AAO) film was use as the template ; the PLGA solution was then cast on it ; the vacuum air-extraction process was applied to transfer the nano porous pattern from the AAO membrane to the PLGA membrane and form nanostures on it. The cell culture experiments of the bovine endothelial cells demonstrated that the nanostructured PLGA membrane can double the cell growing rate. Compared to the conventional chemical-etching process, the physical fabrication method proposed in this research not only is simpler but also does not alter the characteristics of the PLGA. The nanostructure of the PLGA membrane can be well controlled by the AAO temperate.

  8. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  9. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

    2008-01-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  10. Porous Anodic Aluminum Oxide with Serrated Nanochannels

    Science.gov (United States)

    Li, Dongdong; Zhao, Liang; Lu, Jia G.

    2010-03-01

    Self-assembled nanoporous anodic aluminum oxide (AAO) membrane with straight channels has long been an important tool in synthesizing highly ordered and vertically aligned quasi-1D nanostructures for various applications. Recently shape-selective nanomaterials have been achieved using AAO as a template. It is envisioned that nanowires with multi-branches will significantly increase the active functional sites for applications as sensors, catalysts, chemical cells, etc. Here AAO membranes with serrated nanochannels have been successfully fabricated via a two-step annodization method. The serrated channels with periodic intervals are aligned at an angle of ˜25^circ along the stem channels. The formation of the serrated channels is attributed to the evolution of oxygen gas bubbles and the resulted plastic deformation in oxide membrane. In order to reveal the inside channel structure, Platinum are electrodeposited into the AAO template. The as-synthesized serrated Pt nanowires demonstrate a superior electrocatalytic activity. This is attributed to the enhanced electric field strength around serrated tips as shown in the electric field simulation by COMOSL. Moreover, hierarchical serrated/straight hybrid structures can be constructed using this simple and novel self assembly technique.

  11. Damp heat stable doped zinc oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Hüpkes, J., E-mail: j.huepkes@fz-juelich.de [IEK5–Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich (Germany); Owen, J.I. [IEK5–Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich (Germany); Wimmer, M.; Ruske, F. [Institute of Silicon Photovoltaics, Helmholtz-Zentrum Berlin für Materialien und Energie, Kekuléstraße 5, 12489 Berlin (Germany); Greiner, D.; Klenk, R. [Institute for Heterogeneous Materials Systems, Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Zastrow, U. [IEK5–Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich (Germany); Hotovy, J. [IEK5–Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich (Germany); Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava (Slovakia)

    2014-03-31

    Zinc oxide is widely used as transparent contact in thin film solar cells. We investigate the damp heat stability of aluminum doped ZnO (ZnO:Al) films sputter deposited at different conditions. Increase in resistivity upon damp heat exposure was observed for as-deposited ZnO:Al films and the water penetration was directly linked to this degradation. Deuterium was used as isotopic marker to identify the amount of water taken up by the films. Finally, we applied a special annealing step to prepare highly stable ZnO:Al films with charge carrier mobility of 70 cm{sup 2}/Vs after 1000 h of damp heat treatment. A grain boundary reconstruction model is proposed to explain the high stability of ZnO:Al films after annealing. - Highlights: • Study of damp heat degradation on electrical properties of ZnO:Al • Demonstration of fast water penetration and replacement mechanism • Damp heat stable ZnO:Al films with high mobility after damp heat treatment.

  12. Cerium oxide as conversion coating for the corrosion protection of aluminum

    Directory of Open Access Journals (Sweden)

    JELENA GULICOVSKI

    2013-11-01

    Full Text Available CeO2 coatings were formed on the aluminum after Al surface preparation, by dripping the ceria sol, previously prepared by forced hydrolysis of Ce(NO34. The anticorrosive properties of ceria coatings were investigated by the electrochemical impedance spectroscopy (EIS during the exposure to 0.03 % NaCl. The morphology of the coatings was examined by the scanning electron microscopy (SEM. EIS data indicated considerably larger corrosion resistance of CeO2-coated aluminum than for bare Al. The corrosion processes on Al below CeO2 coating are subjected to more pronounced diffusion limitations in comparison to the processes below passive aluminum oxide film, as the consequence of the formation of highly compact protective coating. The results show that the deposition of ceria coatings is an effective way to improve corrosion resistance for aluminum.

  13. SURFACE MORPHOLOGIES OF ALUMINUM FILMS ON SILICONE OIL SURFACES

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The surface morphology and growth mechanism of an aluminum film system deposited on silicone oil surfaces by a vapor depositing method was investigated by scanning electron microscopy. It was found that the perpendicular fluctuation of the film' s bottom surface was more remarkable than that of the film' s top sur- face. Near the joint between the film on the silicone oil substrate and the film on the sihcon wafer surface on which the silicone oil substrate rested, was a naturally formed anomalous wedge-shaped wrinkly structure with slopes of 10-4 - 10-5 rad, whose growth mechanism could be imerpretod under the assumption of the thermal expansion behavior of the liquid substrates.

  14. Porous and mesh alumina formed by anodization of high purity aluminum films at low anodizing voltage

    Energy Technology Data Exchange (ETDEWEB)

    Abd-Elnaiem, Alaa M., E-mail: alaa.abd-elnaiem@science.au.edu.eg [KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Mebed, A.M. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Department of Physics, Faculty of Science, Al-Jouf University, Sakaka 2014 (Saudi Arabia); El-Said, Waleed Ahmed [Department of Chemistry, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Abdel-Rahim, M.A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt)

    2014-11-03

    Electrochemical oxidation of high-purity aluminum (Al) films under low anodizing voltages (1–10) V has been conducted to obtain anodic aluminum oxide (AAO) with ultra-small pore size and inter-pore distance. Different structures of AAO have been obtained e.g. nanoporous and mesh structures. Highly regular pore arrays with small pore size and inter-pore distance have been formed in oxalic or sulfuric acids at different temperatures (22–50 °C). It is found that the pore diameter, inter-pore distance and the barrier layer thickness are independent of the anodizing parameters, which is very different from the rules of general AAO fabrication. The brand formation mechanism has been revealed by the scanning electron microscope study. Regular nanopores are formed under 10 V at the beginning of the anodization and then serve as a template layer dominating the formation of ultra-small nanopores. Anodization that is performed at voltages less than 5 V leads to mesh structured alumina. In addition, we have introduced a simple one-pot synthesis method to develop thin walls of oxide containing lithium (Li) ions that could be used for battery application based on anodization of Al films in a supersaturated mixture of lithium phosphate and phosphoric acid as matrix for Li-composite electrolyte. - Highlights: • We develop anodic aluminum oxide (AAO) with small pore size and inter-pore distance. • Applying low anodizing voltages onto aluminum film leads to form mesh structures. • The value of anodizing voltage (1–10 V) has no effect on pore size or inter-pore distance. • Applying anodizing voltage less than 5 V leads to mesh structured AAO. • AAO can be used as a matrix for Li-composite electrolytes.

  15. The thickness of native oxides on aluminum alloys and single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Evertsson, J., E-mail: jonas.evertsson@sljus.lu.se [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Bertram, F. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Zhang, F. [KTH Royal Institute of Technology, Department of Chemistry, Division of Surface and Corrosion Science, Drottning Kristinas Vg 51, 100 44 Stockholm (Sweden); Rullik, L.; Merte, L.R.; Shipilin, M. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Soldemo, M.; Ahmadi, S. [KTH Royal Institute of Technology, ICT, Material Physics, 16440 Kista (Sweden); Vinogradov, N.; Carlà, F. [ESRF, B.P. 220, 38043 Grenoble (France); Weissenrieder, J.; Göthelid, M. [KTH Royal Institute of Technology, ICT, Material Physics, 16440 Kista (Sweden); Pan, J. [KTH Royal Institute of Technology, Department of Chemistry, Division of Surface and Corrosion Science, Drottning Kristinas Vg 51, 100 44 Stockholm (Sweden); Mikkelsen, A. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Nilsson, J.-O. [Sapa Technology, Kanalgatan 1, 612 31 Finspång (Sweden); Lundgren, E. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden)

    2015-09-15

    Highlights: • We have determined the native oxide film thickness on several Al samples. • The results obtained from XRR and XPS show excellent agreement. • The results obtained from EIS show consistently thinner oxide films. • The oxides on the alloys are thicker than the oxides on the single crystals. - Abstract: We present results from measurements of the native oxide film thickness on four different industrial aluminum alloys and three different aluminum single crystals. The thicknesses were determined using X-ray reflectivity, X-ray photoelectron spectroscopy, and electrochemical impedance spectroscopy. In addition, atomic force microscopy was used for micro-structural studies of the oxide surfaces. The reflectivity measurements were performed in ultra-high vacuum, vacuum, ambient, nitrogen and liquid water conditions. The results obtained using X-ray reflectivity and X-ray photoelectron spectroscopy demonstrate good agreement. However, the oxide thicknesses determined from the electrochemical impedance spectroscopy show a larger discrepancy from the above two methods. In the present contribution the reasons for this discrepancy are discussed. We also address the effect of the substrate type and the presence of water on the resultant oxide thickness.

  16. Preparation of micro/nano-structure superhydrophobic film on aluminum plates using galvanic corrosion method.

    Science.gov (United States)

    Wu, Ruomei; Chao, Guang Hua; Jiang, Haiyun; Pan, Anqiang; Chen, Hong; Yuan, Zhiqing; Liu, Qilong

    2013-10-01

    A simple and novel approach has been developed to obtain a microporous film with compound nanoparticles on the surface of aluminum alloy substrate using the galvanic corrosion method. The wettability of the surface changes from hydrophilicity to superhydrophobicity after chemical modification with stearic acid (SA). The water contact angle (WCA) and sliding angle (WSA) of superhydrophobic aluminum alloy surface (SAAS) are 154 degrees and 9 degrees, respectively. The roughness of the aluminum substrate increases after the oxidation reaction. The porous aluminum matrix surface is covered with irregularly shaped holes with a mean radius of about 15 microm, similar to the surface papillae of natural Lotus leaf, with villus-like nanoparticles array on pore surfaces. The superhydrophobic property is attributed to this special surface morphology and low surface energy SA. X-ray powder diffraction (XRD) pattern and Energy Dispersive X-Ray Spectroscopy (EDS) spectrum indicate that Al2O3, Al(OH)3 and AIO(OH) has been formed on the surface of aluminum substrate after the oxidation reaction. The Raman spectra indicate that C-H bond from SA and the Al-O are formed on the SAAS. The as-formed SAAS has good stability. PMID:24245140

  17. Modeling the Shock Ignition of a Copper Oxide Aluminum Thermite

    Science.gov (United States)

    Lee, Kibaek; Stewart, D. Scott; Clemenson, Michael; Glumac, Nick; Murzyn, Christopher

    2015-06-01

    An experimental ``striker confinement'' shock compression test was developed in the Glumac-group at the University of Illinois to study ignition and reaction in composite reactive materials. These include thermitic and intermetallic reactive powders. The test places a sample of materials such as a thermite mixture of copper oxide and aluminum powders that are initially compressed to about 80 percent full density. Two RP-80 detonators simultaneously push steel bars into reactive material and the resulting compression causes shock compaction of the material and rapid heating. At that point one observes significant reaction and propagation of fronts. But the fronts are peculiar in that they are comprised of reactive events that can be traced to the reaction/diffusion of the initially separated reactants of copper oxide and aluminum that react at their mutual interfaces that nominally make copper liquid and aluminum oxide products. We discuss our model of the shock ignition of the copper oxide aluminum thermite in the context of the striker experiment and how a Gibbs formulation model, that includes multi-components for liquid and solid phases of aluminum, copper oxide, copper and aluminum oxide can predict the events observed at the particle scale in the experiments. Supported by HDTRA1-10-1-0020 (DTRA), N000014-12-1-0555 (ONR).

  18. A Conducting Polymer Film Stronger Than Aluminum

    Science.gov (United States)

    Shi, Gaoquan; Jin, Shi; Xue, Gi; Li, Cun

    1995-02-01

    Polythiophene (Pth) was electrochemically deposited onto stainless steel substrate from freshly distilled boron fluoride-ethyl ether containing 10 millimoles of thiophene per liter. The free-standing Pth film obtained at an applied potential of 1.3 volts (versus Ag/AgCl) had a conductivity of 48.7 siemens per centimeter. Its tensile strength (1200 to 1300 kilograms per square centimeter) was greater than that of aluminium (1000 to 1100 kilograms per square centimeter). This Pth film behaves like a metal sheet and can be easily cut into various structures with a knife or a pair of scissors.

  19. Hangzhou Jinjiang Group Shanxi Fusheng Aluminum Phase I 800,000 t/a Aluminum Oxide Project Started Operation

    Institute of Scientific and Technical Information of China (English)

    2014-01-01

    <正>On October 19,the Shanxi Province Pinglu County Phase I 800,000t/a Aluminum Oxide Project of Shanxi Fusheng Aluminum Co.,Ltd,a subordinate of Hangzhou Jinjiang Group,started operation.This is the fourth Aluminum oxide project constructed and operated by Jinjiang Group.

  20. Methods for both coating a substrate with aluminum oxide and infusing the substrate with elemental aluminum

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jung-Pyung; Weil, Kenneth Scott

    2016-11-01

    Methods of aluminizing the surface of a metal substrate. The methods of the present invention do not require establishment of a vacuum or a reducing atmosphere, as is typically necessary. Accordingly, aluminization can occur in the presence of oxygen, which greatly simplifies and reduces processing costs by allowing deposition of the aluminum coating to be performed, for example, in air. Embodiments of the present invention can be characterized by applying a slurry that includes a binder and powder granules containing aluminum to the metal substrate surface. Then, in a combined step, a portion of the aluminum is diffused into the substrate and a portion of the aluminum is oxidized by heating the slurry to a temperature greater than the melting point of the aluminum in an oxygen-containing atmosphere.

  1. Poly-Si films with low aluminum dopant containing by aluminum-induced crystallization

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Typically, highly p-doped (2×10 18 cm -3 ) poly-Si films fabricated by the aluminum induced layer exchange (ALILE) process are not suitable for solar cell absorber layers. In this paper, the fabrication of high-quality, continuous polycrystalline silicon (poly-Si) films with lower doping concentrations (2×10 16 cm -3 ) using aluminum-induced crystallization (AIC) is reported. Secondary-ion-mass spectroscopy (SIMS) results showed that annealing at different temperature profiles leads to a variety of Al concentrations. Hall Effect measurements revealed that Al dopant concentration depends on the annealing temperature and temperature profile. Raman spectral analysis indicated that samples prepared via AIC contain some regions with small grains.

  2. Atmospheric pressure plasma enhanced chemical vapor deposition of zinc oxide and aluminum zinc oxide

    International Nuclear Information System (INIS)

    Zinc oxide (ZnO) and aluminum-doped zinc oxide (AZO) thin films were deposited via atmospheric pressure plasma enhanced chemical vapor deposition. A second-generation precursor, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)(N,N′-diethylethylenediamine) zinc, exhibited significant vapor pressure and good stability at one atmosphere where a vaporization temperature of 110 °C gave flux ∼ 7 μmol/min. Auger electron spectroscopy confirmed that addition of H2O to the carrier gas stream mitigated F contamination giving nearly 1:1 metal:oxide stoichiometries for both ZnO and AZO with little precursor-derived C contamination. ZnO and AZO thin film resistivities ranged from 14 to 28 Ω·cm for the former and 1.1 to 2.7 Ω·cm for the latter. - Highlights: • A second generation precursor was utilized for atmospheric pressure film growth. • Addition of water vapor to the carrier gas stream led to a marked reduction of ZnF2. • Carbonaceous contamination from the precursor was minimal

  3. Enhanced conductivity of aluminum doped ZnO films by hydrogen plasma treatment

    Energy Technology Data Exchange (ETDEWEB)

    Chang, H.P. [Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Wang, F.H., E-mail: fansen@dragon.nchu.edu.t [Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Wu, J.Y.; Kung, C.Y.; Liu, H.W. [Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan (China)

    2010-10-01

    Aluminum doped zinc oxide (AZO) thin films prepared by radio-frequency (RF) magnetron sputtering at various RF power were treated by hydrogen plasma to enhance the characteristics for transparent electrode applications. The hydrogen plasma treatment was carried out at 300 {sup o}C in a plasma enhanced chemical vapor deposition system. X-ray diffraction analysis shows that all AZO films have a (002) preferred orientation and film crystallinity seems no significant change after plasma treatment. The plasma treatment not only significantly decreases film resistivity but enhances electrical stability as aging in air ambient. The improved electrical properties are due to desorption of weakly bonded oxygen species, formation of Zn-H type species and passivation of deep-level defects during plasma treatment.

  4. Fabrication of nano-structured super-hydrophobic film on aluminum by controllable immersing method

    Energy Technology Data Exchange (ETDEWEB)

    Wu Ruomei [School of Materials Science and Engineering, Central South University, Changsha, Hunan, 410083 (China); School of Packing Materials and Engineering, Hunan University of Technology, Zhuzhou, Hunan, 412008 (China); Liang Shuquan, E-mail: sqliang@mail.csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha, Hunan, 410083 (China); Pan Anqiang [School of Materials Science and Engineering, Central South University, Changsha, Hunan, 410083 (China); Yuan Zhiqing [School of Packing Materials and Engineering, Hunan University of Technology, Zhuzhou, Hunan, 412008 (China); Tang Yan; Tan Xiaoping; Guan Dikai; Yu Ya [School of Materials Science and Engineering, Central South University, Changsha, Hunan, 410083 (China)

    2012-06-01

    Aluminum alloy surface can be etched easily in acid environment, but the microstructure of alloy surface hardly meets the customers' demand. In this work, a facile acidic-assistant surface oxidation technique has been employed to form reproducible super-hydrophobic surfaces on aluminum alloy plates. The samples immersed in three different acid solutions at ambient temperatures are studied and the results demonstrated that the aqueous mixture solution of oxalic acid and hydrochloric is easier to produce better faces and better stability. Scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectrometer, X-ray photoelectron spectroscopy (XPS) and water contact angle measurement are used to investigate the morphologies, microstructures, chemical compositions and hydrophobicity of the produced films on aluminum substrates. The surfaces, configured of a labyrinth structure with convexity and concavity, are in different roughness and gloss because of the different recipe acid solutions used. Better roughness of the surface can be obtained by adjusting the concentration of Cl{sup -} and oxalate ions in acid solutions. The present research work provides a new strategy for the controllable preparation super-hydrophobic films of general materials on aluminum alloy for practical industrial applications.

  5. The improvement of corrosion resistance of Ce conversion films on aluminum alloy by phosphate post-treatment

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Haibing [School of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029 (China); Zuo Yu [School of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029 (China)], E-mail: zuoy@mail.buct.edu.cn

    2008-06-15

    A phosphate post-treatment process for Ce conversion film on aluminum was studied. SEM (scanning electronic microscope), XPS (X-ray photoelectron spectroscopy) and electrochemical measurements were used to characterize the properties of the films. After the post-treatment the micro-cracks on the film surface obviously diminished, and corrosion resistance of the conversion film in NaCl solution increased. The conversion film, without post-treatment, was mainly composed of hydrated cerium oxides, and the dehydration of the film may cause cracking of the films. After phosphate treatment, stable cerium phosphate CePO{sub 4} was formed on the surface, and the content of crystal water decreased greatly, leading to improvement of the film performance with less micro-cracks.

  6. Spatial atomic layer deposition on flexible porous substrates: ZnO on anodic aluminum oxide films and Al{sub 2}O{sub 3} on Li ion battery electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Kashish [Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309 (United States); Routkevitch, Dmitri; Varaksa, Natalia [InRedox, Longmont, Colorado 80544 (United States); George, Steven M., E-mail: Steven.George@Colorado.Edu [Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309 and Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States)

    2016-01-15

    Spatial atomic layer deposition (S-ALD) was examined on flexible porous substrates utilizing a rotating cylinder reactor to perform the S-ALD. S-ALD was first explored on flexible polyethylene terephthalate polymer substrates to obtain S-ALD growth rates on flat surfaces. ZnO ALD with diethylzinc and ozone as the reactants at 50 °C was the model S-ALD system. ZnO S-ALD was then performed on nanoporous flexible anodic aluminum oxide (AAO) films. ZnO S-ALD in porous substrates depends on the pore diameter, pore aspect ratio, and reactant exposure time that define the gas transport. To evaluate these parameters, the Zn coverage profiles in the pores of the AAO films were measured using energy dispersive spectroscopy (EDS). EDS measurements were conducted for different reaction conditions and AAO pore geometries. Substrate speeds and reactant pulse durations were defined by rotating cylinder rates of 10, 100, and 200 revolutions per minute (RPM). AAO pore diameters of 10, 25, 50, and 100 nm were utilized with a pore length of 25 μm. Uniform Zn coverage profiles were obtained at 10 RPM and pore diameters of 100 nm. The Zn coverage was less uniform at higher RPM values and smaller pore diameters. These results indicate that S-ALD into porous substrates is feasible under certain reaction conditions. S-ALD was then performed on porous Li ion battery electrodes to test S-ALD on a technologically important porous substrate. Li{sub 0.20}Mn{sub 0.54}Ni{sub 0.13}Co{sub 0.13}O{sub 2} electrodes on flexible metal foil were coated with Al{sub 2}O{sub 3} using 2–5 Al{sub 2}O{sub 3} ALD cycles. The Al{sub 2}O{sub 3} ALD was performed in the S-ALD reactor at a rotating cylinder rate of 10 RPM using trimethylaluminum and ozone as the reactants at 50 °C. The capacity of the electrodes was then tested versus number of charge–discharge cycles. These measurements revealed that the Al{sub 2}O{sub 3} S-ALD coating on the electrodes enhanced the capacity stability. This S

  7. Self-ordering behavior of nanoporous anodic aluminum oxide (AAO) in malonic acid anodization

    Energy Technology Data Exchange (ETDEWEB)

    Lee, W; Nielsch, K; Goesele, U [Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Germany)

    2007-11-28

    The self-ordering behavior of anodic aluminum oxide (AAO) has been investigated for anodization of aluminum in malonic acid (H{sub 4}C{sub 3}O{sub 4}) solution. In the present study it is found that a porous oxide layer formed on the surface of aluminum can effectively suppress catastrophic local events (such as breakdown of the oxide film and plastic deformation of the aluminum substrate), and enables stable fast anodic oxidation under a high electric field of 110-140 V and {approx}100 mA cm{sup -2}. Studies on the self-ordering behavior of AAO indicated that the cell homogeneity of AAO increases dramatically as the anodization voltage gets higher than 120 V. Highly ordered AAO with a hexagonal arrangement of the nanopores could be obtained in a voltage range 125-140 V. The current density (i.e., the electric field strength (E) at the bottom of a pore) is an important parameter governing the self-ordering of the nanopores as well as the interpore distance (D{sub int}) for a given anodization potential (U) during malonic acid anodization.

  8. Superhydrophobic nanostructured ZnO thin films on aluminum alloy substrates by electrophoretic deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Ying; Sarkar, D.K., E-mail: dsarkar@uqac.ca; Chen, X-Grant

    2015-02-01

    Graphical abstract: - Highlights: • Fabrication of superhydrophobic ZnO thin films surfaces by electrophoretic deposition process on aluminum substrates. • Effect of bath temperature on the physical and superhydrophobic properties of thin films. • The water contact angle of 155° ± 3 with roll off property has been observed on the film that was grown at bath temperatures of 50 °C. • The activation energy for electrophoretic deposition of SA-functionalized ZnO nanoparticle is calculated to be 0.50 eV. - Abstract: Superhydrophobic thin films have been fabricated on aluminum alloy substrates by electrophoretic deposition (EPD) process using stearic acid (SA) functionalized zinc oxide (ZnO) nanoparticles suspension in alcohols at varying bath temperatures. The deposited thin films have been characterized using both X-ray diffraction (XRD) and infrared (IR) spectroscopy and it is found that the films contain low surface energy zinc stearate and ZnO nanoparticles. It is also observed that the atomic percentage of Zn and O, roughness and water contact angle of the thin films increase with the increase of the deposited bath temperature. Furthermore, the thin film deposited at 50 °C, having a roughness of 4.54 ± 0.23 μm, shows superhydrophobic properties providing a water contact angle of 155 ± 3° with rolling off properties. Also, the activation energy of electrophoretic deposition of stearic-acid-functionalized ZnO nanoparticles is calculated to be 0.5 eV.

  9. Poly-crystalline thin-film by aluminum induced crystallization on aluminum nitride substrate

    Science.gov (United States)

    Bhopal, Muhammad Fahad; Lee, Doo Won; Lee, Soo Hong

    2016-09-01

    Thin-film polycrystalline silicon ( pc-Si) on foreign (non-silicon) substrates has been researched by various research groups for the production of photovoltaic cells. High quality pc-Si deposition on foreign substrates with superior optical properties is considered to be the main hurdle in cell fabrication. Metal induced crystallization (MIC) is one of the renowned techniques used to produce this quality of material. In the current study, an aluminum induced crystallization (AIC) method was adopted to produce pc-Si thin-film on aluminum nitride (AlN) substrate by a seed layer approach. Aluminum and a-Si layer were deposited using an e-beam evaporator. Various annealing conditions were used in order to investigate the AIC grown pc-Si seed layers for process optimization. The effect of thermal annealing on grain size, defects preferentially crystallographic orientation of the grains were analyzed. Surface morphology was studied using an optical microscope. Poly-silicon film with a crystallinity fraction between 95-100% and an FWHM between 5-6 cm-1 is achievable at low temperatures and for short time intervals. A grain size of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) also showed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si was evaluated using μ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction (GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layer with good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and short time frames.

  10. Identity of Passive Film Formed on Aluminum in Li-ion BatteryElectrolytes with LiPF6

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xueyuan; Devine, T.M.

    2006-09-01

    The passive film that forms on aluminum in 1:1 ethylene carbonate + ethylmethyl carbonate with 1.2M LiPF{sub 6} and 1:1 ethylene carbonate + dimethyl carbonate with 1.0M LiPF{sub 6} was investigated by a combination of electrochemical quartz crystal microbalance measurements (EQCM), electrochemical impedance spectroscopy (EIS), and x-ray photoelectron spectroscopy. During anodic polarization of aluminum a film of AlF{sub 3} forms on top of the air-formed oxide, creating a duplex, or two-layered film. The thickness of the AlF{sub 3} increases with the applied potential. Independent measurements of film thickness by EQCM and EIS indicate that at a potential of 5.5V vs. Li/Li{sup +}, the thickness of the AlF{sub 3} is approximately 1 nm.

  11. Influence of additive element on surface oxide film of A356 alloy

    Institute of Scientific and Technical Information of China (English)

    OUYANG Zhi-ying; LIANG Hong-yu; MAO Xie-min; HONG Mei

    2006-01-01

    The influences of RE-modification and Sr-modification on the hydrogen content and surface oxide film of A356 aluminum alloy melt were investigated. The hydrogen content of the melt was measured by reduce pressure test. The phases in the surface oxide film were analyzed by X-ray diffractometry (XRD), and the morphology of the surface oxide film was observed by scanning electronic microscopy (SEM). The results show that RE-modification reduces the hydrogen content of A356 aluminum alloy greatly.Contrarily, Sr-modification increases the hydrogen content remarkably. After being treated with RE, a large number of LaAl11O18 consisting of Al2O3 and La2O3, are generated in the surface oxide film of A356 alloy. The surface oxide film of Sr-modification is almost composed of Al2SrO4. According to the results of SEM, the surface oxide film of Sr-modification is very easy to crack,destroy the continuity and compactness of surface oxide film, accelerate the vapor diffusing into the melt, consequently, increase the hydrogen content of A356 alloy melt significantly. But RE-modification makes the surface oxide film compact, and restrains the aluminum exposed to water, so reduces the hydrogen content of A356 alloy melt.

  12. Low temperature aluminum nitride thin films for sensory applications

    Science.gov (United States)

    Yarar, E.; Hrkac, V.; Zamponi, C.; Piorra, A.; Kienle, L.; Quandt, E.

    2016-07-01

    A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d33,f) increased from 2.30 ± 0.32 pm/V up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (ɛr) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e31,f|) of 1.39 ± 0.01 C/m2 was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.

  13. Ultraviolet optical properties of aluminum fluoride thin films deposited by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hennessy, John, E-mail: john.j.hennessy@jpl.nasa.gov; Jewell, April D.; Balasubramanian, Kunjithapatham; Nikzad, Shouleh [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109 (United States)

    2016-01-15

    Aluminum fluoride (AlF{sub 3}) is a low refractive index material with promising optical applications for ultraviolet (UV) wavelengths. An atomic layer deposition process using trimethylaluminum and anhydrous hydrogen fluoride has been developed for the deposition of AlF{sub 3} at substrate temperatures between 100 and 200 °C. This low temperature process has resulted in thin films with UV-optical properties that have been characterized by ellipsometric and reflection/transmission measurements at wavelengths down to 200 nm. The optical loss for 93 nm thick films deposited at 100 °C was measured to be less than 0.2% from visible wavelengths down to 200 nm, and additional microstructural characterization demonstrates that the films are amorphous with moderate tensile stress of 42–105 MPa as deposited on silicon substrates. X-ray photoelectron spectroscopy analysis shows no signature of residual aluminum oxide components making these films good candidates for a variety of applications at even shorter UV wavelengths.

  14. Electrochemical synthesis and corrosion behavior of thin polyaniline film on mild steel, copper and aluminum

    Directory of Open Access Journals (Sweden)

    Elkais Ali Ramadan

    2011-01-01

    Full Text Available The electrochemical synthesis of polyaniline (PANI on mild steel, aluminum and copper from the sodium benzoate solutions has been investigated. It has been shown that thin, highly adherent, polyaniline films on the investigated metals could be obtained by anodic oxidation with current densities in the range of 0.5 and 1.5 mA cm-2. The corrosion behavior of mild steel, aluminum and copper with polyaniline coating in 0.5 mol dm3 NaCl (pH 3 solutions, has been investigated by polarization technique. The corrosion current densities, porosity and protection efficiency was determined. It has been shown that polyaniline coating provided corrosion protection of all mentioned metals.

  15. Effect of intermetallic phases on the anodic oxidation and corrosion of 5A06 aluminum alloy

    Science.gov (United States)

    Li, Song-mei; Li, Ying-dong; Zhang, You; Liu, Jian-hua; Yu, Mei

    2015-02-01

    Intermetallic phases were found to influence the anodic oxidation and corrosion behavior of 5A06 aluminum alloy. Scattered intermetallic particles were examined by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) after pretreatment. The anodic film was investigated by transmission electron microscopy (TEM), and its corrosion resistance was analyzed by electrochemical impedance spectroscopy (EIS) and Tafel polarization in NaCl solution. The results show that the size of Al-Fe-Mg-Mn particles gradually decreases with the iron content. During anodizing, these intermetallic particles are gradually dissolved, leading to the complex porosity in the anodic film beneath the particles. After anodizing, the residual particles are mainly silicon-containing phases, which are embedded in the anodic film. Electrochemical measurements indicate that the porous anodic film layer is easily penetrated, and the barrier plays a dominant role in the overall protection. Meanwhile, self-healing behavior is observed during the long immersion time.

  16. The influence of Ac parameters in the process of micro-arc oxidation film electric breakdown

    Directory of Open Access Journals (Sweden)

    Ma Jin

    2016-01-01

    Full Text Available This paper studies the electric breakdown discharge process of micro-arc oxidation film on the surface of aluminum alloy. Based on the analysis of the AC parameters variation in the micro-arc oxidation process, the following conclusions can be drawn: The growth of oxide film can be divided into three stages, and Oxide film breakdown discharge occurs twice in the micro-arc oxidation process. The first stage is the formation and disruptive discharge of amorphous oxide film, producing the ceramic oxide granules, which belong to solid dielectric breakdown. In this stage the membrane voltage of the oxide film plays a key role; the second stage is the formation of ceramic oxide film, the ceramic oxide granules turns into porous structure oxide film in this stage; the third stage is the growth of ceramic oxide film, the gas film that forms in the oxide film’s porous structure is electric broken-down, which is the second breakdown discharge process, the current density on the oxide film surface could affect the breakdown process significantly.

  17. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg....

  18. Reduction of Oxidative Melt Loss of Aluminum and Its Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Dr. Subodh K. Das; Shridas Ningileri

    2006-03-17

    This project led to an improved understanding of the mechanisms of dross formation. The microstructural evolution in industrial dross samples was determined. Results suggested that dross that forms in layers with structure and composition determined by the local magnesium concentration alone. This finding is supported by fundamental studies of molten metal surfaces. X-ray photoelectron spectroscopy data revealed that only magnesium segregates to the molten aluminum alloy surface and reacts to form a growing oxide layer. X-ray diffraction techniques that were using to investigate an oxidizing molten aluminum alloy surface confirmed for the first time that magnesium oxide is the initial crystalline phase that forms during metal oxidation. The analytical techniques developed in this project are now available to investigate other molten metal surfaces. Based on the improved understanding of dross initiation, formation and growth, technology was developed to minimize melt loss. The concept is based on covering the molten metal surface with a reusable physical barrier. Tests in a laboratory-scale reverberatory furnace confirmed the results of bench-scale tests. The main highlights of the work done include: A clear understanding of the kinetics of dross formation and the effect of different alloying elements on dross formation was obtained. It was determined that the dross evolves in similar ways regardless of the aluminum alloy being melted and the results showed that amorphous aluminum nitride forms first, followed by amorphous magnesium oxide and crystalline magnesium oxide in all alloys that contain magnesium. Evaluation of the molten aluminum alloy surface during melting and holding indicated that magnesium oxide is the first crystalline phase to form during oxidation of a clean aluminum alloy surface. Based on dross evaluation and melt tests it became clear that the major contributing factor to aluminum alloy dross was in the alloys with Mg content. Mg was

  19. Spotting 2D atomic layers on aluminum nitride thin films

    Science.gov (United States)

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Raghavan, Srinivasan

    2015-10-01

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

  20. Spotting 2D atomic layers on aluminum nitride thin films.

    Science.gov (United States)

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Srinivasan Raghavan

    2015-10-23

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

  1. Method of patterning super-conductive oxide films by use of diffusion barrier

    Energy Technology Data Exchange (ETDEWEB)

    Dam, B.; Van der Kolk, G.J.; Heijman, M.G.J.

    1990-11-20

    This patent describes a method of manufacturing a film of a copper oxide based superconducting material in a desired pattern. The superconducting material comprises an alkaline earth metal, copper, another metal component and oxygen in which method a superconductor precursor material comprising copper oxide, alkaline earth metal fluoride and another metal or metal oxide is provided on a substrate in the form of a film, applying a diffusion barrier formed of a material selected from the group consisting of gold, silicon and aluminum and oxides of silicon and of aluminum against water and oxygen in a pattern complementary to the desired pattern on the film and subsequently heating the film with the patterned diffusion barrier to an elevated temperature in the presence of water and oxygen such that the film not covered by the diffusion barrier becomes superconducting.

  2. Corrosion control of aluminum surfaces by polypyrrole films: influence of electrolyte

    Directory of Open Access Journals (Sweden)

    Andréa Santos Liu

    2007-06-01

    Full Text Available Polypyrrole (PPy films were galvanostatically deposited on 99.9 wt. (% aluminum electrodes from aqueous solutions containing each carboxylic acid: tartaric, oxalic or citric. Scanning Electron Microscopy (SEM was used to analyze the morphology of the aluminum surfaces coated with the polymeric films. It was observed that the films deposited from tartaric acid medium presented higher homogeneity than those deposited from oxalic and citric acid. Furthermore, the corrosion protection of aluminum surfaces by PPy films was also investigated by potentiodynamic polarization experiments.

  3. Progress in Nano-Engineered Anodic Aluminum Oxide Membrane Development

    Directory of Open Access Journals (Sweden)

    Gerrard Eddy Jai Poinern

    2011-02-01

    Full Text Available The anodization of aluminum is an electro-chemical process that changes the surface chemistry of the metal, via oxidation, to produce an anodic oxide layer. During this process a self organized, highly ordered array of cylindrical shaped pores can be produced with controllable pore diameters, periodicity and density distribution. This enables anodic aluminum oxide (AAO membranes to be used as templates in a variety of nanotechnology applications without the need for expensive lithographical techniques. This review article is an overview of the current state of research on AAO membranes and the various applications of nanotechnology that use them in the manufacture of nano-materials and devices or incorporate them into specific applications such as biological/chemical sensors, nano-electronic devices, filter membranes and medical scaffolds for tissue engineering.

  4. Passivation effects of atomic-layer-deposited aluminum oxide

    Directory of Open Access Journals (Sweden)

    Kotipalli R.

    2013-09-01

    Full Text Available Atomic-layer-deposited (ALD aluminum oxide (Al2O3 has recently demonstrated an excellent surface passivation for both n- and p-type c-Si solar cells thanks to the presence of high negative fixed charges (Qf ~ 1012−1013 cm-2 in combination with a low density of interface states (Dit. This paper investigates the passivation quality of thin (15 nm Al2O3 films deposited by two different techniques: plasma-enhanced atomic layer deposition (PE-ALD and Thermal atomic layer deposition (T-ALD. Other dielectric materials taken into account for comparison include: thermally-grown silicon dioxide (SiO2 (20 nm, SiO2 (20 nm deposited by plasma-enhanced chemical vapour deposition (PECVD and hydrogenated amorphous silicon nitride (a-SiNx:H (20 nm also deposited by PECVD. With the above-mentioned dielectric layers, Metal Insulator Semiconductor (MIS capacitors were fabricated for Qf and Dit extraction through Capacitance-Voltage-Conductance (C-V-G measurements. In addition, lifetime measurements were carried out to evaluate the effective surface recombination velocity (SRV. The influence of extracted C-V-G parameters (Qf,Dit on the injection dependent lifetime measurements τ(Δn, and the dominant passivation mechanism involved have been discussed. Furthermore we have also studied the influence of the SiO2 interfacial layer thickness between the Al2O3 and silicon surface on the field-effect passivation mechanism. It is shown that the field effect passivation in accumulation mode is more predominant when compared to surface defect passivation.

  5. Formation of Nanoporous Anodic Alumina by Anodization of Aluminum Films on Glass Substrates.

    Science.gov (United States)

    Lebyedyeva, Tetyana; Kryvyi, Serhii; Lytvyn, Petro; Skoryk, Mykola; Shpylovyy, Pavlo

    2016-12-01

    Our research was aimed at the study of aluminum films and porous anodic alumina (PAA) films in thin-film РАА/Al structures for optical sensors, based on metal-clad waveguides (MCWG). The results of the scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies of the structure of Al films, deposited by DC magnetron sputtering, and of PAA films, formed on them, are presented in this work.The study showed that the structure of the Al films is defined by the deposition rate of aluminum and the thickness of the film. We saw that under anodization in 0.3 M aqueous oxalic acid solution at a voltage of 40 V, the PAA film with a disordered array of pores was formed on aluminum films 200-600 nm thick, which were deposited on glass substrates with an ultra-thin adhesive Nb layer. The research revealed the formation of two differently sized types of pores. The first type of pores is formed on the grain boundaries of aluminum film, and the pores are directed perpendicularly to the surface of aluminum. The second type of pores is formed directly on the grains of aluminum. They are directed perpendicularly to the grain plains. There is a clear tendency to self-ordering in this type of pores. PMID:27083584

  6. Aluminum Nanostructured Films as Substrates for Enhanced Fluorescence in the Ultraviolet-Blue Spectral Region

    OpenAIRE

    Ray, Krishanu; Chowdhury, Mustafa H.; Lakowicz, Joseph R.

    2007-01-01

    Particulate aluminum films of varied thicknesses were deposited on quartz substrates by thermal evaporation. These nanostructured substrates were characterized by scanning electron microscopy (SEM). With the increase of aluminum thickness, the films progress from particulate toward smooth surfaces as observed by SEM images. To date, metal-enhanced fluorescence (MEF) has primarily been observed in the visible–NIR wavelength region using silver or gold island films or roughened surfaces. We now...

  7. PLASMA POLYMER FILMS AS ADHESION PROMOTING PRIMERS FOR ALUMINUM SUBSTRATES. PART I: CHARACTERIZATION OF FILMS AND FILM/SUBSTRATE INTERFACES

    Science.gov (United States)

    Plasma polymerized hexamethyldisiloxane (HMDSO) films (~800 Å in thickness) were deposited onto aluminum substrates (6111-T4 alloy) in radio frequency (RF) and microwave (MW) powered reactors to be used as primers for structural adhesive bonding. Processing variables such as sub...

  8. Shuttle Redesigned Solid Rocket Motor aluminum oxide investigations

    Science.gov (United States)

    Blomshield, Fred S.; Kraeutle, Karl J.; Stalnaker, Richard A.

    1994-10-01

    During the launch of STS-54, a 15 psi pressure blip was observed in the ballistic pressure trace of one of the two Space Shuttle Redesigned Solid Rocket Motors (RSRM). One possible scenario for the observed pressure increase deals with aluminum oxide slag formation in the RSRM. The purpose of this investigation was to examine changes which may have occurred in the aluminum oxide formation in shuttle solid propellant due to changes in the ammonium perchlorate. Aluminum oxide formation from three propellants, all having the same formulation, but containing ammonium perchlorate from different manufacturers, will be compared. Three methods have been used to look for possible differences among the propellants. The first method was to examine window bomb movies of the propellants burning at 100, 300 and 600 psia. The motor operating pressure during the pressure blip was around 600 psia. The second method used small samples of propellant which were fired in a combustion bomb which quenched the burning aluminum particles soon after they left the propellant surface. The bomb was fired in both argon and Nitrogen atmospheres at various pressures. Products from this device were examined by optical microscopy. The third method used larger propellant samples fired into a particle collection device which allowed the aluminum to react and combust more completely. This device was pressurized with Nitrogen to motor operating pressures. The collected products were subdivided into size fractions by screening and sedimentation and analyzed optically with an optical microscope. the results from all three methods indicate very small changes in the size distribution of combustion products.

  9. Role of aluminum doping on phase transformations in nanoporous titania anodic oxides

    Energy Technology Data Exchange (ETDEWEB)

    Bayata, Fatma [Istanbul Bilgi University, Department of Mechanical Engineering, 34060, Eyup, Istanbul (Turkey); Ürgen, Mustafa, E-mail: urgen@itu.edu.tr [Istanbul Technical University, Department of Metallurgical and Materials Engineering, 34469, Maslak, Istanbul (Turkey)

    2015-10-15

    The role of aluminium doping on anatase to rutile phase transformation of nanoporous titanium oxide films were investigated. For this purpose pure and aluminum doped metal films were deposited on alumina substrates by cathodic arc physical deposition. The nanoporous anodic oxides were prepared by porous anodizing of pure and aluminum doped titanium metallic films in an ethylene glycol + NH{sub 4}F based electrolyte. Nanoporous amorphous structures with 60–80 nm diameter and 2–4 μm length were formed on the surfaces of alumina substrates. The amorphous undoped and Al-doped TiO{sub 2} anodic oxides were heat-treated at different temperatures in the range of 280–720 °C for the investigation of their crystallization behavior. The combined effects of nanoporous structure and Al doping on crystallization behavior of titania were investigated using X-ray diffraction (XRD) and micro Raman analysis. The results indicated that both Al ions incorporated into the TiO{sub 2} structure and the nanoporous structure retarded the rutile formation. It was also revealed that presence or absence of metallic film underneath the nanopores has a major contribution to anatase-rutile transformation. - Highlights: • Al-doped TiO{sub 2} nanopores were grown on alumina substrates using anodization method. • The crystallization behavior of nanoporous Al-doped TiO{sub 2} were investigated. • Al doping into nanoporous TiO{sub 2} retarded the anatase-rutile transformation. • Nanostructuring has significant role in controlling rutile formation temperature. • The absence of the metallic film under the nanopores delayed the rutile formation.

  10. Growth of ultrathin amorphous alumina films during the oxidation of NiAl(100)

    Science.gov (United States)

    Cai, Na; Qin, Hailang; Tong, Xiao; Zhou, Guangwen

    2013-12-01

    The effect of temperature on the oxidation of NiAl(100) is comparatively studied at 25 °C and 300 °C using X-ray Photoelectron Spectroscopy to elucidate the effect of oxide-alloy interfacial reaction on the growth of ultrathin alumina thin films. The oxidation at 25 °C results in self-limiting aluminum oxide film growth to a less extent of the limiting thickness regimes with non-stoichiometric oxide films exhibiting a deficiency of Al cations, whereas for the oxidation at 300 °C the oxide films grow to a larger limiting thickness with relatively enriched with Al at the limiting thickness. The temperature dependent limiting thickness and composition of the oxide films are ascribed to the transport velocity of Al from deeper layers to the oxide/alloy interface during the oxide growth. For the oxidation at 25 °C the oxide film growth depletes Al and forms an underlying Ni-rich interfacial layer that blocks the supply of Al atoms to the oxide/substrate interface, whereas for the oxidation at 300 °C the enhanced diffusion rate maintains adequate supply of Al atoms to the oxide/alloy interface to sustain the oxide film growth to the full extent of the limiting thickness.

  11. Thermocurrent dosimetry with high purity aluminum oxide

    Energy Technology Data Exchange (ETDEWEB)

    Fullerton, G.D.; Cameron, J.R.; Moran, P.R.

    1976-01-01

    The application of thermocurrent (TC) to ionizing radiation dosimetry was studied. It was shown that TC in alumina (Al/sub 2/O/sub 3/) has properties that are suited to personnel dosimetry and environmental monitoring. TC dosimeters were made from thin disks of alumina. Aluminum electrodes were evaporated on each side: on one face a high voltage electrode and on the opposite face a measuring electrode encircled by a guard ring. Exposure to ionizing radiation resulted in stored electrons and holes in metastable trapping sites. The signal was read-out by heating the dosimeter with a voltage source and picnometer connected in series between the opposite electrodes. The thermally remobilized charge caused a transient TC. The thermogram, TC versus time or temperature, is similar to a TL glow curve. Either the peak current or the integrated current is a measure of absorbed dose. Six grades of alumina were studied from a total of four commercial suppliers. All six materials displayed radiation induced TC signals. Sapphire of uv-grade quality from the Adolf Meller Co. (AM) had the best dosimetry properties of those investigated. Sources of interference were studied. Thermal fading, residual signal and radiation damage do not limit TC dosimetry. Ultraviolet light can induce a TC response but it is readily excluded with uv-opaque cladding. Improper surface preparation prior to electrode evaporation was shown to cause interference. A spurious TC signal resulted from polarization of surface contaminants. Spurious TC was reduced by improved cleaning prior to electrode application. Polished surfaces resulted in blocking electrodes and caused a sensitivity shift due to radiation induced thermally activated polarization. This was not observed with rough cut surfaces.

  12. Thermally stimulated luminescence studies in combustion synthesized polycrystalline aluminum oxide

    Indian Academy of Sciences (India)

    K R Nagabhushana; B N Lakshminarasappa; D Revannasiddaiah; Fouran Singh

    2008-08-01

    Synthesis of materials by combustion technique results in homogeneous and fine crystalline product. Further, the technique became more popular since it not only saved time and energy but also was easy to process. Aluminum oxide phosphor was synthesized by using urea as fuel in combustion reaction. Photoluminescence (PL) and thermally stimulated luminescence (TSL) characteristics of -irradiated aluminum oxide samples were studied. A broad PL emission with a peak at ∼ 465 nm and a pair of strong and sharp emissions with peaks at 679 and 695 nm were observed in -rayed samples. The PL intensity was observed to increase with increase in -ray dose. Two prominent and well resolved TSL glows with peaks at 210°C and 365°C were observed in all -irradiated Al2O3 samples. The TSL intensity was also found to increase with increase in -ray dose. The TSL glow curves indicated second order kinetics.

  13. Oxide mediated spectral shifting in aluminum resonant optical antennas.

    Science.gov (United States)

    Schwab, Patrick M; Moosmann, Carola; Dopf, Katja; Eisler, Hans-Jürgen

    2015-10-01

    As a key feature among metals showing good plasmonic behavior, aluminum extends the spectrum of achievable plasmon resonances of optical antennas into the deep ultraviolet. Due to degradation, a native oxide layer gives rise to a metal-core/oxide-shell nanoparticle and influences the spectral resonance peak position. In this work, we examine the role of the underlying processes by applying numerical nanoantenna models that are experimentally not feasible. Finite-difference time-domain simulations are carried out for a large variety of elongated single-arm and two-arm gap nanoantennas. In a detailed analysis, which takes into account the varying surface-to-volume ratio, we show that the overall spectral shift toward longer wavelengths is mainly driven by the higher index surrounding material rather than by the decrease of the initial aluminum volume. In addition, we demonstrate experimentally that this shifting can be minimized by an all-inert fabrication and subsequent proof-of-concept encapsulation.

  14. Catalytic Behaviour of Mesoporous Cobalt-Aluminum Oxides for CO Oxidation

    Directory of Open Access Journals (Sweden)

    Ankur Bordoloi

    2014-01-01

    Full Text Available Ordered mesoporous materials are promising catalyst supports due to their uniform pore size distribution, high specific surface area and pore volume, tunable pore sizes, and long-range ordering of the pore packing. The evaporation-induced self-assembly (EISA process was applied to synthesize mesoporous mixed oxides, which consist of cobalt ions highly dispersed in an alumina matrix. The characterization of the mesoporous mixed cobalt-aluminum oxides with cobalt loadings in the range from 5 to 15 wt% and calcination temperatures of 673, 973, and 1073 K indicates that Co2+ is homogeneously distributed in the mesoporous alumina matrix. As a function of the Co loading, different phases are present comprising poorly crystalline alumina and mixed cobalt aluminum oxides of the spinel type. The mixed cobalt-aluminum oxides were applied as catalysts in CO oxidation and turned out to be highly active.

  15. Aluminum recycling from reactor walls: A source of contamination in a-Si:H thin films

    International Nuclear Information System (INIS)

    In this article, the authors investigate the contamination of hydrogenated amorphous silicon thin films with aluminum recycled from the walls and electrodes of the deposition reactor. Thin films of hydrogenated amorphous silicon were prepared under various conditions by a standard radio frequency plasma enhanced chemical vapor deposition process in two reactors, the chambers of which were constructed of either aluminum or stainless steel. The authors have studied the electronic properties of these thin films and have found that when using an aluminum reactor chamber, the layers are contaminated with aluminum recycled from the chamber walls and electrode. This phenomenon is observed almost independently of the deposition conditions. The authors show that this contamination results in slightly p-doped films and could be detrimental to the deposition of device grade films. The authors also propose a simple way to control and eventually suppress this contamination.

  16. Flexible piezoelectric pressure sensors using oriented aluminum nitride thin films prepared on polyethylene terephthalate films

    Science.gov (United States)

    Akiyama, Morito; Morofuji, Yukari; Kamohara, Toshihiro; Nishikubo, Keiko; Tsubai, Masayoshi; Fukuda, Osamu; Ueno, Naohiro

    2006-12-01

    We have investigated the high sensitive piezoelectric response of c-axis oriented aluminum nitride (AlN) thin films prepared on polyethylene terephthalate (PET) films. The AlN films were deposited using a radio frequency magnetron sputtering method at temperatures close to room temperature. The c axes of the AlN films were perpendicularly oriented to the PET film surfaces. The sensor consisting of the AlN and PET films is flexible like PET films and the electrical charge is linearly proportional to the stress within a wide range from 0to8.5MPa. The sensor can respond to the frequencies from 0.3 to over 100Hz and measures a clear human pulse wave form by holding the sensor between thumb and middle finger. The resolution of the pulse wave form is comparable to a sphygmomanometer at stress levels of 10kPa. We think that the origin of the high performance of the sensor is the deflection effect, the thin thickness and high elastic modulus of the AlN layer, and the thin thickness and low elastic modulus of the PET film.

  17. Metallic nanoparticle shape and size effects on aluminum oxide-induced enhancement of exciton-plasmon coupling and quantum dot emission

    Science.gov (United States)

    Wing, Waylin J.; Sadeghi, Seyed M.; Gutha, Rithvik R.; Campbell, Quinn; Mao, Chuanbin

    2015-09-01

    We investigate the shape and size effects of gold metallic nanoparticles on the enhancement of exciton-plasmon coupling and emission of semiconductor quantum dots induced via the simultaneous impact of metal-oxide and plasmonic effects. This enhancement occurs when metallic nanoparticle arrays are separated from the quantum dots by a layered thin film consisting of a high index dielectric material (silicon) and aluminum oxide. Our results show that adding the aluminum oxide layer can increase the degree of polarization of quantum dot emission induced by metallic nanorods by nearly two times, when these nanorods have large aspect ratios. We show when the aspect ratio of these nanorods is reduced to half, the aluminum oxide loses its impact, leading to no improvement in the degree of polarization. These results suggest that a silicon/aluminum oxide layer can significantly enhance exciton-plasmon coupling when quantum dots are in the vicinity of metallic nanoantennas with high aspect ratios.

  18. Metallic nanoparticle shape and size effects on aluminum oxide-induced enhancement of exciton-plasmon coupling and quantum dot emission

    International Nuclear Information System (INIS)

    We investigate the shape and size effects of gold metallic nanoparticles on the enhancement of exciton-plasmon coupling and emission of semiconductor quantum dots induced via the simultaneous impact of metal-oxide and plasmonic effects. This enhancement occurs when metallic nanoparticle arrays are separated from the quantum dots by a layered thin film consisting of a high index dielectric material (silicon) and aluminum oxide. Our results show that adding the aluminum oxide layer can increase the degree of polarization of quantum dot emission induced by metallic nanorods by nearly two times, when these nanorods have large aspect ratios. We show when the aspect ratio of these nanorods is reduced to half, the aluminum oxide loses its impact, leading to no improvement in the degree of polarization. These results suggest that a silicon/aluminum oxide layer can significantly enhance exciton-plasmon coupling when quantum dots are in the vicinity of metallic nanoantennas with high aspect ratios

  19. Metallic nanoparticle shape and size effects on aluminum oxide-induced enhancement of exciton-plasmon coupling and quantum dot emission

    Energy Technology Data Exchange (ETDEWEB)

    Wing, Waylin J.; Sadeghi, Seyed M., E-mail: seyed.sadeghi@uah.edu; Gutha, Rithvik R.; Campbell, Quinn [Department of Physics, University of Alabama in Huntsville, Huntsville, Alabama 35899 (United States); Mao, Chuanbin [Department of Chemistry and Biochemistry, Stephenson Life Sciences Research Center, University of Oklahoma, Norman, Oklahoma 73019 (United States)

    2015-09-28

    We investigate the shape and size effects of gold metallic nanoparticles on the enhancement of exciton-plasmon coupling and emission of semiconductor quantum dots induced via the simultaneous impact of metal-oxide and plasmonic effects. This enhancement occurs when metallic nanoparticle arrays are separated from the quantum dots by a layered thin film consisting of a high index dielectric material (silicon) and aluminum oxide. Our results show that adding the aluminum oxide layer can increase the degree of polarization of quantum dot emission induced by metallic nanorods by nearly two times, when these nanorods have large aspect ratios. We show when the aspect ratio of these nanorods is reduced to half, the aluminum oxide loses its impact, leading to no improvement in the degree of polarization. These results suggest that a silicon/aluminum oxide layer can significantly enhance exciton-plasmon coupling when quantum dots are in the vicinity of metallic nanoantennas with high aspect ratios.

  20. Effect of aluminum metal surface on oxidation of iodide under gamma irradiation conditions

    International Nuclear Information System (INIS)

    The effects of aluminum surface on I- oxidation under gamma irradiation were investigated. Without irradiation, only O2 oxidized I- at pH < 2, and aluminum expedited the oxidation reaction. With irradiation, the radiolysis products from water and air oxidized I- into I3-. At pH < 2, O2 generated by water radiolysis additionally oxidized I-. However, at pH > 6, the H2O2 radiolysis product reduced I3- into I-. A smaller amount of I3- was observed in pH 1.9 and 3.3 solutions in contact with aluminum under irradiation because oxidants preferentially oxidize aluminum rather than I-. Moreover, for pH < 6.0, even less I3- was formed by aluminum exposed to air because air radiolysis products also preferentially oxidized aluminum. (author)

  1. Study on the Rare Earth Sealing Procedure of the Porous Film of Anodized 2024 Aluminum Alloy

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The rare earth sealing procedure of the porous film of anodized aluminum alloy 2024 was studied with the fieldemission scanning electron microscope (SEM) and X-ray energy dispersive spectroscopy (EDS). The results show thatRE solution can form cerium oxide/hydroxides precipitation in the pores of the anodized coating at the beginning ofsealing. At the same time, the spherical deposits formed on the surface of the anodized coating created a barrierto the precipitation of RE solution in the pores. When the pore-structured anodizing film is covered all with thespherical deposits, RE conversion coating will form on the surface of the anodized coating. The reaction of thecoating formation was investigated by employing cyclic voltammetry. The results indicate that accelerator H2O2 actsas the source of O2 by carrying chemical reaction in course of coating formation. In the mean time, it maybe carrieselectrochemical reaction to generate alkaline condition to accelerate the coating formation. The porous structure ofthe film is beneficial to the precipitation of the cerium hydroxides film.

  2. Deposition and characterization of amorphous aluminum nitride thin films for a gate insulator

    International Nuclear Information System (INIS)

    Thin films of aluminum nitride (AlN) fabricated by reactive deposition were characterized in order to examine the electrical insulation properties suitable for a gate insulator. For a series of AlN films deposited with a variation of the amount of Al flux at a fixed N flux, compositional and chemical analyses were performed using X-ray photoelectron spectroscopy (XPS) and elastic recoil detection analysis (ERDA). Combined with the result of current-voltage (I-V) measurement, it is found that the insulation properties are correlated with the compositional ratio between Al and N estimated by the ERDA measurement; a good electrical insulation with a minimal leak current of the order of 10-9 A/cm2 at a high electric field 1 MV/cm is achieved in the film of nearly stoichiometric compositional ratio of Al/N, in which the dominance of the Al-N bonding state is confirmed in the XPS measurement. On the other hand, the incorporation of oxygen, probably caused by the surface oxidization due to the exposure to the air, has little effect on the electrical properties. - Highlights: • AlN thin films deposited by reactive deposition were characterized for gate insulator. • A good electrical insulation was achieved at nearly stoichiometric composition. • The effects of oxygen incorporation and Al-N bonding state were also investigated. • A minimum leak current density as low as 10-9A/cm2 at 1MV/cm was achieved

  3. Prediction of new thermodynamically stable aluminum oxides

    CERN Document Server

    Liu, Yue; Wang, Shengnan; Zhu, Qiang; Dong, Xiao; Kresse, Georg

    2015-01-01

    Recently, it has been shown that under pressure, unexpected and counterintuitive chemical compounds become stable. Laser shock experiments (A. Rode, unpublished) on alumina (Al2O3) have shown non-equilibrium decomposition of alumina with the formation of free Al and a mysterious transparent phase. Inspired by these observations, with have explored the possibility of the formation of new chemical compounds in the system Al-O. Using the variable-composition structure prediction algorithm USPEX, in addition to the well-known Al2O3, we have found two extraordinary compounds Al4O7 and AlO2 to be thermodynamically stable in the pressure range 330-443 GPa and above 332 GPa, respectively. Both of these compounds at the same time contain oxide O2- and peroxide O22- ions, and both are insulating. Peroxo-groups are responsible for gap states, which significantly reduce the electronic band gap of both Al4O7 and AlO2.

  4. Nanosecond laser ablation processes in aluminum-doped zinc-oxide for photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Canteli, D., E-mail: david.canteli@ciemat.es [Division de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda. Complutense, 22, 28040 Madrid (Spain); Fernandez, S. [Division de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda. Complutense, 22, 28040 Madrid (Spain); Molpeceres, C. [Centro Laser, Universidad Politecnica de Madrid, Ctra. de Valencia Km 7.3, 28031 Madrid (Spain); Torres, I.; Gandia, J.J. [Division de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda. Complutense, 22, 28040 Madrid (Spain)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer A study of the ablation of AZO thin films deposited at different temperature conditions with nanosecond UV laser light for photovoltaic devices has been performed. Black-Right-Pointing-Pointer The ablation threshold of AZO thin films was measured and related with the absorption coefficient of the films at the laser wavelength, showing a direct correspondence. Black-Right-Pointing-Pointer A change in the material structure in the areas closest to the edges of laser grooves made in samples deposited at temperatures below 100 Degree-Sign C was observed and studied. - Abstract: Aiming to a future use in thin film solar modules, the processing of aluminum doped zinc oxide thin films with good optoelectronic properties with a nanosecond-pulsed ultraviolet laser has been studied. The ablation threshold fluence of the films has been determined and associated with the material properties. The ablation process has been optimized and grooves with good properties for photovoltaic devices have been obtained. The morphology of the ablated surfaces has been observed by confocal microscopy and its structure has been characterized by Raman spectroscopy. The influence of ablation parameters like focus distance, pulse energy and repetition frequency in the groove morphology has been studied with special attention to the thermal effects on the material structure.

  5. New roots to formation of nanostructures on glass surface through anodic oxidation of sputtered aluminum

    Directory of Open Access Journals (Sweden)

    Satoru Inoue, Song-Zhu Chu, Kenji Wada, Di Li and Hajime Haneda

    2003-01-01

    Full Text Available New processes for the preparation of nanostructure on glass surfaces have been developed through anodic oxidation of sputtered aluminum. Aluminum thin film sputtered on a tin doped indium oxide (ITO thin film on a glass surface was converted into alumina by anodic oxidation. The anodic alumina gave nanometer size pore array standing vertically on the glass surface. Kinds of acids used in the anodic oxidation changed the pore size drastically. The employment of phosphoric acid solution gave several tens nanometer size pores. Oxalic acid cases produced a few tens nanometer size pores and sulfuric acid solution provided a few nanometer size pores. The number of pores in a unit area could be changed with varying the applied voltage in the anodization and the pore sizes could be increased by phosphoric acid etching. The specimen consisting of a glass substrate with the alumina nanostructures on the surface could transmit UV and visible light. An etched specimen was dipped in a TiO2 sol solution, resulting in the impregnation of TiO2 sol into the pores of alumina layer. The TiO2 sol was heated at ~400 °C for 2 h, converting into anatase phase TiO2. The specimens possessing TiO2 film on the pore wall were transparent to the light in UV–Visible region. The electro deposition technique was applied to the introduction of Ni metal into pores, giving Ni nanorod array on the glass surface. The removal of the barrier layer alumina at the bottom of the pores was necessary to attain smooth electro deposition of Ni. The photo catalytic function of the specimens possessing TiO2 nanotube array was investigated in the decomposition of acetaldehyde gas under the irradiation of UV light, showing that the rate of the decomposition was quite large.

  6. Radioluminescence of rare-earth doped aluminum oxide

    Energy Technology Data Exchange (ETDEWEB)

    Santiago, M.; Molina, P. [Universidad Nacional del Centro de la Provincia de Buenos Aires, Instituto de Fisica Arroyo Seco, Pinto 399, 7000 Tandil (Argentina); Barros, V. S.; Khoury, H. J.; Elihimas, D. R., E-mail: msantiag@exa.unicen.edu.ar [Universidade Federal de Pernambuco, Departamento de Energia Nuclear, Av. Prof. Luiz Freire 1000, Recife, PE 50740-540 (Brazil)

    2011-10-15

    Carbon-doped aluminum oxide (Al{sub 2}O{sub 3}:C) is one of the most used radioluminescence (Rl) materials for fiberoptic dosimetry due to its high efficiency and commercial availability. However, this compound presents the drawback of emitting in the spectral region, where the spurious radioluminescence of fibers is also important. In this work, the radioluminescence response of rare-earth doped Al{sub 2}O{sub 3} samples has been evaluated. The samples were prepared by mixing stoichiometric amounts of aluminum nitrate, urea and dopants with different amounts of terbium, samarium, cerium and thulium nitrates varying from 0 to 0.15 mo 1%. The influence of the different activators on the Rl spectra has been investigated in order to determine the feasibility of using these compounds for Rl fiberoptic dosimetry. (Author)

  7. Core–Shell Electrospun Hollow Aluminum Oxide Ceramic Fibers

    Directory of Open Access Journals (Sweden)

    Jonathan W. Rajala

    2015-10-01

    Full Text Available In this work, core–shell electrospinning was employed as a simple method for the fabrication of composite coaxial polymer fibers that became hollow ceramic tubes when calcined at high temperature. The shell polymer solution consisted of polyvinyl pyrollidone (PVP in ethanol mixed with an aluminum acetate solution to act as a ceramic precursor. The core polymer was recycled polystyrene to act as a sacrificial polymer that burned off during calcination. The resulting fibers were analyzed with X-ray diffraction (XRD and energy dispersive spectroscopy (EDS to confirm the presence of gamma-phase aluminum oxide when heated at temperatures above 700 °C. The fiber diameter decreased from 987 ± 19 nm to 382 ± 152 nm after the calcination process due to the polymer material being burned off. The wall thickness of these fibers is estimated to be 100 nm.

  8. Irradiation behavior of uranium oxide - Aluminum dispersion fuel

    International Nuclear Information System (INIS)

    An oxide version of the DART code has been generated in order to assess the irradiation behavior of UO2-Al dispersion fuel. The aluminum-fuel interaction models were developed based on U3O8-Al irradiation data. Deformation of the fuel element occurs due to fuel particle swelling driven by both solid and gaseous fission products and as a consequence of the interaction between the fuel particles and the aluminum matrix. The calculations show that, with the assumption that the correlations derived from U3O8 are valid for UO2, the LEU UO2-Al with a 42% fuel volume loading (4 g U/cm3 ) irradiated at fuel temperatures greater than 413 K should undergo breakaway swelling at core burnups greater than about 1.12 x 1027 fissions m-3 (∼63% 235U burnup). (author)

  9. Aluminum film microdeposition at 775 nm by femtosecond laser-induced forward transfer

    Institute of Scientific and Technical Information of China (English)

    Li Yang; Chingyue Wang; Xiaochang Ni; Yinzhong Wu; Wei Jia; Lu Chai

    2007-01-01

    Micro-deposition of an aluminum film of 500-nm thickness on a quartz substrate was demonstrated by laserinduced forward transfer (LIFT) using a femtosecond laser pulse. With the help of atomic force microscopy (AFM) and scanning electron microscopy (SEM), the dependence of the morphology of deposited aluminum film on the irradiated laser pulse energy was investigated. As the laser fluence was slightly above the threshold fluence, the higher pressure of plasma for the thicker film made the free surface of solid phase burst out, which resulted in that not only the solid material was sputtered but also the deposited film in the liquid state was made irregularly.

  10. The preparation and corrosion resistance of Ce and Nd modified anodic films on aluminum

    Energy Technology Data Exchange (ETDEWEB)

    Li Qizheng; Tang Yuming [School of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029 (China); Zuo Yu, E-mail: zuoy@mail.buct.edu.cn [School of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029 (China)

    2010-04-15

    Rare earth element Ce and Nd modified anodic films were prepared on aluminum surface by a relatively simple method: the aluminum samples were first immersed in Ni(NO{sub 3}){sub 2} solutions containing Ce or Nd salts at 90 deg. C, then were dried and anodized. The contents of Ce or Nd in the anodic films were from 0.5% to 0.9%, and about 4-5% Ni was also introduced in the films. The modified anodic films were more compact with much smaller pores and increased hardness. In neutral, acidic and basic NaCl solutions, the rare earth modified films showed obviously improved corrosion resistance. The Ce modified films showed better corrosion resistance than Nd modified films. The cracking resistance of the films under heating was also improved.

  11. Oxide ultrathin films science and technology

    CERN Document Server

    Pacchioni, Gianfranco

    2012-01-01

    A wealth of information in one accessible book. Written by international experts from multidisciplinary fields, this in-depth exploration of oxide ultrathin films covers all aspects of these systems, starting with preparation and characterization, and going on to geometrical and electronic structure, as well as applications in current and future systems and devices. From the Contents: Synthesis and Preparation of Oxide Ultrathin FilmsCharacterization Tools of Oxide Ultrathin FilmsOrdered Oxide Nanostructures on Metal SurfacesUnusual Properties of Oxides and Other Insulators in the Ultrathin Li

  12. Screen Cage Ion Plating (SCIP) and scratch testing of polycrystalline aluminum oxide

    Science.gov (United States)

    Spalvins, Talivaldis; Sliney, Harold E.; Deadmore, Daniel L.

    1992-01-01

    A screen cage ion plating (SCIP) technique was developed to apply silver films on electrically nonconducting aluminum oxide. It is shown that SCIP has remarkable throwing power; surfaces to be coated need not be in direct line of sight with the evaporation source. Scratch tests, employing a diamond stylus with a 200 micro m radius tip, were performed on uncoated and on silver coated alumina. Subsequent surface analysis show that a significant amount of silver remains on the scratched surfaces, even in areas where high stylus load produced severe crack patterns in the ceramic. Friction coefficients were lowered during the scratch tests on the coated alumina indicating that this modification of the ion planting process should be useful for applying lubricating films of soft metals to electrical insulating materials. The very good throwing power of SCIP also strongly suggests general applicability of this process in other areas of technology, e.g., electronics, in addition to tribology.

  13. Interactive effect of cerium and aluminum on the ignition point and the oxidation resistance of magnesium alloy

    Energy Technology Data Exchange (ETDEWEB)

    Lin Pengyu [Key Laboratory of Automobile Materials of Ministry of Education, School of Materials Science and Engineering, Nanling Campus of Jilin University, Changchun Jilin 130025 (China)], E-mail: linpengyu2000@yahoo.com.cn; Zhou Hong; Li Wei; Li Wenping; Sun Na [Key Laboratory of Automobile Materials of Ministry of Education, School of Materials Science and Engineering, Nanling Campus of Jilin University, Changchun Jilin 130025 (China); Yang Rong [Public Mathematics Teaching and Research Center, College of Mathematics, Qianwei Campus of Jilin University, Changchun Jilin 130012 (China)

    2008-09-15

    This paper focused on the interactive effect of cerium (Ce) addition and aluminum (Al) content in magnesium alloy on ignition point and oxidation resistance. Ce content played an important role in improving the oxidation resistance of Mg alloy. Ignition point ascended with increasing Ce content. 0.25 wt% Ce content in Mg alloys could greatly improve tightness of the oxide film of Mg alloys. However, when Ce content in the alloy exceeded its solid solubility, ignition point descended. Furthermore, Al content in the alloy also influenced the ignition point. The higher the Al content was, the lower the ignition point.

  14. An Analysis of Mechanical Properties of Anodized Aluminum Film at High Stress

    Science.gov (United States)

    Zhao, Xixi; Wei, Guoying; Yu, Yundan; Guo, Yuemei; Zhang, Ao

    2015-10-01

    In this paper, a new environmental-friendly electrolyte containing sulfuric acid and tartaric acid has been used as the substitute of chromic acid for anodization. The work discussed the influence of anodizing voltages on the fatigue life of anodized Al 2024-T3 by performing fatigue tests with 0.1 stress ratio (R) at 320 MPa. Meanwhile the fatigue cycles to failure, yield strength, tensile strength and fracture surface of anodic films at different conditions were investigated. The results showed that the fatigue life of anodized and sealed specimens reduced a lot compared to aluminum alloy, which can be attributed to the crack sites initiated at the oxide layer. The fracture surface analyses also revealed that the number of crack initiation sites enlarged with the increase of anodizing voltage.

  15. Lithium insertion in sputtered vanadium oxide film

    DEFF Research Database (Denmark)

    West, K.; Zachau-Christiansen, B.; Skaarup, S.V.;

    1992-01-01

    were oxygen deficient compared to V2O5. Films prepared in pure argon were reduced to V(4) or lower. The vanadium oxide films were tested in solid-state lithium cells. Films sputtered in oxygen showed electrochemical properties similar to crystalline V2O5. The main differences are a decreased capacity...

  16. Standard specification for nuclear-grade aluminum oxide pellets

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2008-01-01

    1.1 This specification applies to pellets of aluminum oxide that may be ultimately used in a reactor core, for example, as filler or spacers within fuel, burnable poison, or control rods. In order to distinguish between the subject pellets and “burnable poison” pellets, it is established that the subject pellets are not intended to be used as neutron-absorbing material. 1.2 The values stated in inch-pound units are to be regarded as standard. The values given in parentheses are mathematical conversions to SI units that are provided for information only and are not considered standard.

  17. Microstructural evolution of tungsten oxide thin films

    International Nuclear Information System (INIS)

    Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 deg. were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a 'instability wheel' model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

  18. Microstructure and corrosion behavior of micro-arc oxidation coating on 6061 aluminum alloy pre-treated by high-temperature oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Dejiu, E-mail: sdj217@ysu.edu.cn [State Key Laboratory of Metastable Materials Science and Technology, College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004 (China); Li, Guolong, E-mail: lglysu@163.com [State Key Laboratory of Metastable Materials Science and Technology, College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004 (China); Guo, Changhong [College of Mechanical Engineering, Yanshan University, Qinhuangdao 066004 (China); Zou, Jie [China Aviation Industry Chengdu Engine (Group) Co. Ltd., Chengdu 610503 (China); Cai, Jingrui; He, Donglei; Ma, Haojie; Liu, Fangfei [State Key Laboratory of Metastable Materials Science and Technology, College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004 (China)

    2013-12-15

    In this paper, we investigate the microstructure and corrosion behavior of the micro-arc oxidation (MAO) coating on 6061 aluminum alloy that pre-treated by high-temperature oxidation (HTO). Microstructure, chemical and corrosion behaviors of the fabricated MAO ceramic coatings were studied by using scanning electron microscopy (SEM), energy-dispersive spectroscopy (EDS) and electrochemical corrosion tests. The results reveal that the pre-fabricated HTO film remarkably affects the formation of the MAO coating, leads to an enriched content of Mg, and decreases the compactness of the coating. The corrosion resistance of the 6061 aluminum alloy has been significantly improved by treatments of HTO, normal MAO (NMAO) and HTO pre-treated MAO (HTO-MAO), and the NMAO coating exhibits the best corrosion performance. The content of Mg in HTO pre-fabricated film is remarkedly higher than that in the substrate, which greatly influences the formation of the MAO coating.

  19. Research on oxidation resistance of Al2O3 thin film prepared by electrodeposition-pyrolysis

    Directory of Open Access Journals (Sweden)

    Jing MA

    2015-08-01

    Full Text Available Al2O3 thin films are deposited on the surface of 304 stainless steel by electrodeposition-pyrolysis, and the effects of electrolyte concentration and electro-deposition voltage on the oxidation behavior of Al2O3 thin film at 900 ℃ are investigated. Macroscopic surface morphologies, XRD analysis and oxidation kinetics curves show that the electrodeposition-Al2O3 thin films reduce the partial pressure of oxygen at the initial oxidation stage on the substrate surface, promoting the selective oxidation, thus the oxidation resistance of 304 stainless steel is significantly improved. The high temperature oxidation resistance of Al2O3 film prepared under voltage of 25 V and aluminum nitrate alcohol solution of 0.10 mol/L is the best.

  20. Friction reducing behavior of stearic acid film on a textured aluminum substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Quan [School of Mechanical Engineering, Qingdao Technological University, Qingdao 266033 (China); Wan, Yong, E-mail: wanyong@qtech.edu.cn [School of Mechanical Engineering, Qingdao Technological University, Qingdao 266033 (China); Li, Yang; Yang, Shuyan [School of Mechanical Engineering, Qingdao Technological University, Qingdao 266033 (China); Yao, Wenqing [Analysis Center of Tsinghua University, Beijing 100084 (China)

    2013-09-01

    A simple two-step process was developed to render the aluminum hydrophobicity with lower friction. The textured aluminum substrate was firstly fabricated by immersed in a sodium hydroxide solution at 100 °C for 1 h. Stearic acid film was then deposited to acquire high hydrophobicity. Scanning electron microscopy, IR spectroscopy and water contact angle measurements were used to analyze the morphological features, chemical structure and hydrophobicity of prepared samples, respectively. Moreover, the friction reducing behavior of the organic–inorganic composite film on aluminum sliding against steel was evaluated in a ball-on-plate configuration. It was found that the stearic acid film on the textured aluminum led to decreased friction with significantly extended life.

  1. Fabrication of Poly-Si Thin Film on Glass Substrate by Aluminum-induced Crystallization

    Institute of Scientific and Technical Information of China (English)

    XU Man; XIA Donglin; YANG Sheng; ZHAO Xiujian

    2006-01-01

    Amorphous silicon (a-Si) thin films were deposited on glass substrate by PECVD,and polycrystalline silicon (poly-Si) thin films were prepared by aluminum-induced crystallization (AIC). The effects of annealing temperature on the microstructure and morphology were investigated. The AIC poly-Si thin films were characterized by XRD, Raman and SEM. It is found that a-Si thin film has a amorphous structure after annealing at 400 ℃ for 20 min, a-Si films begin to crystallize after annealing at 450 ℃ for 20 min, and the crystallinity of a-Si thin films is enhanced obviously with the increment of annealing temperature.

  2. Quaternary polymethacrylate-magnesium aluminum silicate films: Water uptake kinetics and film permeability.

    Science.gov (United States)

    Rongthong, Thitiphorn; Sungthongjeen, Srisagul; Siepmann, Florence; Siepmann, Juergen; Pongjanyakul, Thaned

    2015-07-25

    The aim of this study was to investigate the impact of the addition of different amounts of magnesium aluminum silicate (MAS) to polymeric films based on quaternary polymethacrylates (QPMs, here Eudragit RS and RL). MAS contains negatively charged SiO(-) groups, while QPM contains positively charged quaternary ammonium groups. The basic idea is to be able to provide desired water and drug permeability by simply varying the amount of added MAS. Thin, free films of varying composition were prepared by casting and exposed to 0.1M HCl and pH 6.8 phosphate buffer. The water uptake kinetics and water vapor permeability of the systems were determined gravimetrically. The transport of propranolol HCl, acetaminophen, methyl-, ethyl- and propylparaben across thin films was studied using side-by-side diffusion cells. A numerical solution of Fick's second law of diffusion was applied to determine the apparent compound diffusion coefficients, partition coefficients between the bulk fluids and the films as well as the apparent film permeability for these compounds. The addition of MAS resulted in denser inner film structures, at least partially due to ionic interactions between the positively charged quaternary ammonium groups and the negatively charged SiO(-) groups. This resulted in lower water uptake, reduced water vapor permeability and decreasing apparent compound diffusivities. In contrast, the affinity of the investigated drugs and parabens to the films substantially increased upon MAS addition. The obtained new knowledge can be helpful for the development of novel coating materials (based on QPM-MAS blends) for controlled-release dosage forms. PMID:26004005

  3. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U. [Institute of Sensor and Actuator Systems, Vienna University of Technology, Vienna 1040 (Austria); Nicolay, P. [CTR Carinthian Tech Research AG, Villach 9524 (Austria)

    2015-02-14

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

  4. Strong coupling of sapphire surface polariton with aluminum nitride film phonon

    Energy Technology Data Exchange (ETDEWEB)

    Yakovlev, V.A., E-mail: yakovlev@isan.troitsk.r [Institute for Spectroscopy of Russian Academy of Sciences, Troitsk, Moscow reg., 142190 (Russian Federation); Novikova, N.N.; Vinogradov, E.A. [Institute for Spectroscopy of Russian Academy of Sciences, Troitsk, Moscow reg., 142190 (Russian Federation); Ng, S.S.; Hassan, Z.; Hassan, H. Abu [School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

    2009-06-22

    Surface polariton spectra of a thin (25 nm) aluminum nitride film on sapphire substrate have been measured using attenuated total reflection technique. Due to the strong coupling of sapphire substrate surface polariton with the film transverse optical phonon the splitting of the dispersion curve of sapphire surface polariton was found.

  5. Chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade aluminum oxide and aluminum oxide-boron carbide composite pellets

    Energy Technology Data Exchange (ETDEWEB)

    1981-01-01

    Aluminum oxide pellets are used in a reactor core as filler or spacers within fuel, burnable poison, or control rods. In order to be suitable for this purpose, the material must meet certain criteria for impurity content. The test methods in the standard are designed to show whether or not a given material meets these specifications. The following analytical procedures are described in detail: boron by titrimetry; separation of boron by mass spectrometry; isotopic composition by mass spectrometry; separation of halides by pyrohydrolysis; fluoride by ion-selective electrode; chloride, bromide, and iodide by amperometric microtitrimetry; trace elements by emission spectroscopy. (JMT)

  6. Deposition and characterization of vacuum deposited aluminum films on Kapton laminates

    Energy Technology Data Exchange (ETDEWEB)

    Sherman, D.M.

    1978-07-01

    A process has been developed for the vacuum deposition by electron beam evaporation of high quality aluminum films 10 ..mu..m thick on domed three-layer laminated substrates consisting of Kapton/Pyralux/Kapton/Pyralux/Aluminum (Du Pont Corporation). Thermogravimetric analysis and mass spectrometry of the substrate materials and in-process residual gas analysis were used to determine the outgassing characteristics of the substrate laminate and to aid in the development of suitable thermal processing. The laminated substrates required bakeouts both at atmosphere and in high vacuum prior to deposition to permit evaporation at a pressure of 0.1 mPa (1 x 10/sup -6/ torr). Film properties that were obtained were a thickness uniformity across a 200 mm diameter part in the 1 percent range, a resistivity near that of bulk pure aluminum, a smooth and shiny film surface, and adequate film adhesion.

  7. Comparative effects of macro-sized aluminum oxide and aluminum oxide nanoparticles on erythrocyte hemolysis: influence of cell source, temperature, and size

    Energy Technology Data Exchange (ETDEWEB)

    Vinardell, M. P., E-mail: mpvinardellmh@ub.edu; Sordé, A. [Universitat de Barcelona, Departament de Fisiologia, Facultat de Farmàcia (Spain); Díaz, J. [Universitat de Barcelona CCiT, Scientific and Technological Centers (Spain); Baccarin, T.; Mitjans, M. [Universitat de Barcelona, Departament de Fisiologia, Facultat de Farmàcia (Spain)

    2015-02-15

    Al{sub 2}O{sub 3} is the most abundantly produced nanomaterial and has been used in diverse fields, including the medical, military, and industrial sectors. As there are concerns about the health effects of nanoparticles, it is important to understand how they interact with cells, and specifically with red blood cells. The hemolysis induced by three commercial nano-sized aluminum oxide particles (nanopowder 13 nm, nanopowder <50 nm, and nanowire 2–6 × 200–400 nm) was compared to aluminum oxide and has been studied on erythrocytes from humans, rats, and rabbits, in order to elucidate the mechanism of action and the influence of size and shape on hemolytic behavior. The concentrations inducing 50 % hemolysis (HC{sub 50}) were calculated for each compound studied. The most hemolytic aluminum oxide particles were of nanopowder 13, followed by nanowire and nanopowder 50. The addition of albumin to PBS induced a protective effect on hemolysis in all the nano-forms of Al{sub 2}O{sub 3}, but not on Al{sub 2}O{sub 3}. The drop in HC{sub 50} correlated to a decrease in nanomaterial size, which was induced by a reduction of aggregation. Aluminum oxide nanoparticles are less hemolytic than other oxide nanoparticles and behave differently depending on the size and shape of the nanoparticles. The hemolytic behavior of aluminum oxide nanoparticles differs from that of aluminum oxide.

  8. Comparative effects of macro-sized aluminum oxide and aluminum oxide nanoparticles on erythrocyte hemolysis: influence of cell source, temperature, and size

    International Nuclear Information System (INIS)

    Al2O3 is the most abundantly produced nanomaterial and has been used in diverse fields, including the medical, military, and industrial sectors. As there are concerns about the health effects of nanoparticles, it is important to understand how they interact with cells, and specifically with red blood cells. The hemolysis induced by three commercial nano-sized aluminum oxide particles (nanopowder 13 nm, nanopowder <50 nm, and nanowire 2–6 × 200–400 nm) was compared to aluminum oxide and has been studied on erythrocytes from humans, rats, and rabbits, in order to elucidate the mechanism of action and the influence of size and shape on hemolytic behavior. The concentrations inducing 50 % hemolysis (HC50) were calculated for each compound studied. The most hemolytic aluminum oxide particles were of nanopowder 13, followed by nanowire and nanopowder 50. The addition of albumin to PBS induced a protective effect on hemolysis in all the nano-forms of Al2O3, but not on Al2O3. The drop in HC50 correlated to a decrease in nanomaterial size, which was induced by a reduction of aggregation. Aluminum oxide nanoparticles are less hemolytic than other oxide nanoparticles and behave differently depending on the size and shape of the nanoparticles. The hemolytic behavior of aluminum oxide nanoparticles differs from that of aluminum oxide

  9. Corrosion evaluation of zirconium doped oxide coatings on aluminum formed by plasma electrolytic oxidation.

    Science.gov (United States)

    Bajat, Jelena; Mišković-Stanković, Vesna; Vasilić, Rastko; Stojadinović, Stevan

    2014-01-01

    The plasma electrolytic oxidation (PEO) of aluminum in sodium tungstate (Na(2)WO(4) · (2)H(2)O) and Na(2)WO(4) · (2)H(2)O doped with Zr was analyzed in order to obtain oxide coatings with improved corrosion resistance. The influence of current density in PEO process and anodization time was investigated, as well as the influence of Zr, with the aim to find out how they affect the chemical content, morphology, surface roughness, and corrosion stability of oxide coatings. It was shown that the presence of Zr increases the corrosion stability of oxide coatings for all investigated PEO times. Evolution of EIS spectra during the exposure to 3% NaCl, as a strong corrosive agent, indicated the highest corrosion stability for PEO coating formed on aluminum at 70 mA/cm(2) for 2 min in a zirconium containing electrolyte. PMID:25125114

  10. Phosphorous and aluminum gettering in Silicon-Film{trademark} Product II material

    Energy Technology Data Exchange (ETDEWEB)

    Cotter, J.E.; Barnett, A.M.; Hall, R.B. [AstroPower, Inc., Newark, DE (United States)] [and others

    1995-08-01

    Gettering processes are being developed for the Silicon-Film{trademark} Product II solar cell structure. These processes have been developed specifically for films of silicon grown on dissimilar substrates with barrier layers. Gettering with both phosphorous- and aluminum-based processing sequences has resulted in enhancement of minority carrier diffusion length. Long diffusion lengths have allowed the characterization of light trapping in thin films of silicon grown on barrier-coated substrates.

  11. The effect of plasma electrolytic oxidation on the mean stress sensitivity of the fatigue life of the 6082 aluminum alloy

    Science.gov (United States)

    Winter, L.; Morgenstern, R.; Hockauf, K.; Lampke, T.

    2016-03-01

    In this work the mean stress influence on the high cycle fatigue behavior of the plasma electrolytic oxidized (PEO) 6082 aluminum alloy (AlSi1MgMn) is investigated. The present study is focused on the fatigue life time and the susceptibility of fatigue-induced cracking of the oxide coating and their dependence on the applied mean stress. Systematic work is done comparing conditions with and without PEO treatment, which have been tested using three different load ratios. For the uncoated substrate the cycles to failure show a significant dependence on the mean stress, which is typical for aluminum alloys. With increased load ratio and therefore increased mean stress, the fatigue strength decreases. The investigation confirms the well-known effect of PEO treatment on the fatigue life: The fatigue strength is significantly reduced by the PEO process, compared to the uncoated substrate. However, also the mean stress sensitivity of the fatigue performance is reduced. The fatigue limit is not influenced by an increasing mean stress for the PEO treated conditions. This effect is firstly shown in these findings and no explanation for this effect can be found in literature. Supposedly the internal compressive stresses and the micro-cracks in the oxide film have a direct influence on the crack initiation and growth from the oxide film through the interface and in the substrate. Contrary to these findings, the susceptibility of fatigue-induced cracking of the oxide coating is influenced by the load ratio. At tension-tension loading a large number of cracks, which grow partially just in the aluminum substrate, are present. With decreasing load ratio to alternating tension-compression stresses, the crack number and length increases and shattering of the oxide film is more pronounced due to the additional effective compressive part of the load cycle.

  12. Fabrication and Corrosion Resistance of Superhydrophobic Hydroxide Zinc Carbonate Film on Aluminum Substrates

    Directory of Open Access Journals (Sweden)

    Jin Liang

    2013-01-01

    Full Text Available Superhydrophobic hydroxide zinc carbonate (HZC films were fabricated on aluminum substrate through a convenient in situ deposition process. Firstly, HZC films with different morphologies were deposited on aluminum substrates through immersing the aluminum substrates perpendicularly into aqueous solution containing zinc nitrate hexahydrate and urea. Secondly, the films were then modified with fluoroalkylsilane (FAS: CH3(CF26(CH23Si(OCH33 molecules by immersing in absolute ethanol solution containing FAS. The morphologies, hydrophobicity, chemical compositions, and bonding states of the films were analyzed by scanning electron microscopy (SEM, water contact angle measurement (CA, Fourier transform infrared spectrometer (FTIR, and X-ray photoelectron spectroscopy (XPS, respectively. It was shown by surface morphological observation that HZC films displayed different microstructures such as microporous structure, rose petal-like structure, block-shaped structure, and pinecone-like structure by altering the deposition condition. A highest water contact angle of 156.2° was obtained after FAS modification. Moreover, the corrosion resistance of the superhydrophobic surface on aluminum substrate was investigated using electrochemical impedance spectroscopy (EIS measurements. The EIS measurements’ results revealed that the superhydrophobic surface considerably improved the corrosion resistance of aluminum.

  13. Fabrication and Corrosion Resistance of Super hydrophobic Hydroxide Zinc Carbonate Film on Aluminum Substrates

    International Nuclear Information System (INIS)

    Super hydrophobic hydroxide zinc carbonate (HZC) films were fabricated on aluminum substrate through a convenient in situ deposition process. Firstly, HZC films with different morphologies were deposited on aluminum substrates through immersing the aluminum substrates perpendicularly into aqueous solution containing zinc nitrate hexahydrate and urea. Secondly, the films were then modified with fluoroalkylsilane (FAS: CH3(CF2)6(CH2))3Si(OCH3)3) molecules by immersing in absolute ethanol solution containing FAS. The morphologies, hydrophobicity, chemical compositions, and bonding states of the films were analyzed by scanning electron microscopy (SEM), water contact angle measurement (CA), Fourier transform infrared spectrometer (FTIR), and X-ray photoelectron spectroscopy (XPS), respectively. It was shown by surface morphological observation that HZC films displayed different microstructures such as microporous structure, rose petal-like structure, block-shaped structure, and pine cone-like structure by altering the deposition condition. A highest water contact angle of 156.2° was obtained after FAS modification. Moreover, the corrosion resistance of the super hydrophobic surface on aluminum substrate was investigated using electrochemical impedance spectroscopy (EIS) measurements. The EIS measurements’ results revealed that the super hydrophobic surface considerably improved the corrosion resistance of aluminum.

  14. Electrochromism of amorphous ruthenium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Se-Hee; Liu, Ping; Tracy, C. Edwin; Deb, Satyen K. [National Renewable Energy Laboratory, Center for Basic Sciences, 1617 Cole Boulevard, Golden, CO 80401 (United States); Cheong, Hyeonsik M. [Sogang University, Shinsoo-Dong, Seoul 121-742 (Korea, Republic of)

    2003-12-01

    We report on the electrochromic behavior of amorphous ruthenium oxide thin films and their electrochemical characteristics for use as counterelectrodes for electrochromic devices. Hydrous ruthenium oxide thin films were prepared by cyclic voltammetry on ITO coated glass substrates from an aqueous ruthenium chloride solution. The cyclic voltammograms of this material show the capacitive behavior including two redox reaction peaks in each cathodic and anodic scan. The ruthenium oxide thin film electrode exhibits a 50% modulation of optical transmittance at 670 nm wavelength with capacitor charge/discharge.

  15. Deposition and characterization of amorphous aluminum nitride thin films for a gate insulator

    Energy Technology Data Exchange (ETDEWEB)

    Oikawa, H.; Akiyama, R. [Institute of Materials Science, University of Tsukuba,1-1-1 Tennoudai, Tsukuba, 305-8573 (Japan); Tsukuba Nano-Tech Human Resource Development Program, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8571 (Japan); Kanazawa, K. [Institute of Materials Science, University of Tsukuba,1-1-1 Tennoudai, Tsukuba, 305-8573 (Japan); Kuroda, S., E-mail: kuroda@ims.tsukuba.ac.jp [Institute of Materials Science, University of Tsukuba,1-1-1 Tennoudai, Tsukuba, 305-8573 (Japan); Tsukuba Nano-Tech Human Resource Development Program, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8571 (Japan); Harayama, I. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8573 (Japan); Tsukuba Nano-Tech Human Resource Development Program, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8571 (Japan); Nagashima, K. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8573 (Japan); Sekiba, D. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8573 (Japan); Tandem Accelerator Complex, Research Facility Center for Science and Technology, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8577 (Japan); Ashizawa, Y.; Tsukamoto, A.; Nakagawa, K. [College of Science and Technology, Nihon University, 7-24-1 Narashinodai, Funabashi, 274-8501 (Japan); Ota, N. [Tsukuba Nano-Tech Human Resource Development Program, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, 305-8571 (Japan)

    2015-01-01

    Thin films of aluminum nitride (AlN) fabricated by reactive deposition were characterized in order to examine the electrical insulation properties suitable for a gate insulator. For a series of AlN films deposited with a variation of the amount of Al flux at a fixed N flux, compositional and chemical analyses were performed using X-ray photoelectron spectroscopy (XPS) and elastic recoil detection analysis (ERDA). Combined with the result of current-voltage (I-V) measurement, it is found that the insulation properties are correlated with the compositional ratio between Al and N estimated by the ERDA measurement; a good electrical insulation with a minimal leak current of the order of 10{sup -9} A/cm{sup 2} at a high electric field 1 MV/cm is achieved in the film of nearly stoichiometric compositional ratio of Al/N, in which the dominance of the Al-N bonding state is confirmed in the XPS measurement. On the other hand, the incorporation of oxygen, probably caused by the surface oxidization due to the exposure to the air, has little effect on the electrical properties. - Highlights: • AlN thin films deposited by reactive deposition were characterized for gate insulator. • A good electrical insulation was achieved at nearly stoichiometric composition. • The effects of oxygen incorporation and Al-N bonding state were also investigated. • A minimum leak current density as low as 10{sup -9}A/cm{sup 2} at 1MV/cm was achieved.

  16. Aluminum-doped Zn O polycrystalline films prepared by co-sputtering of a Zn O-Al target

    Energy Technology Data Exchange (ETDEWEB)

    Becerril, M.; Silva L, H.; Guillen C, A.; Zelaya A, O. [Instituto Politecnico Nacional, Centro de Investigacion y de Estudios Avanzados, Departamento de Fisica, Apdo. Postal 14-740, 07000 Mexico D. F. (Mexico)

    2014-07-01

    Aluminum-doped Zinc oxide polycrystalline thin films (Azo) were grown on 7059 Corning glass substrates at room temperature by co-sputtering from a Zn O-Al target. The target was designed as follows, high purity elemental Aluminum was evaporated onto a Zn O target covering small areas. The structural, optical and electrical properties were analyzed as a function of Al content. The Al doped Zn O polycrystalline films showed an n-type conductivity. It was found that the electrical resistivity drops and the carrier concentration increases as a consequence of Al incorporation within the Zn O lattice. In both cases, the changes are of several orders of magnitude. From the results, we conclude that, using these Zn O-Al targets, n-type Al doped Zn O polycrystalline films with high transmittance and low resistivity can be obtained. The crystalline structure of the films was determined by X-ray diffraction. Atomic Force Microscopy images were obtained with an Auto probe C P (Veeco Metrology Group) Microscope. (Author)

  17. Nano-oxide thin films deposited via atomic layer deposition on microchannel plates.

    Science.gov (United States)

    Yan, Baojun; Liu, Shulin; Heng, Yuekun

    2015-01-01

    Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon.

  18. Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating

    Energy Technology Data Exchange (ETDEWEB)

    Fryauf, David M.; Zhang, Junce; Norris, Kate J.; Diaz Leon, Juan J.; Oye, Michael M.; Kobayashi, Nobuhiko P. [Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California, Santa Cruz, CA (United States); Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA (United States); NASA Ames Research Center, Moffett Field, CA (United States); Wei, Min [Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA (United States); School of Micro-Electronics and Solid-Electronics, University of Electronic Science and Technology of China, Chengdu (China)

    2014-07-15

    This paper describes our finding that optical properties of semiconductor nanowires were modified by depositing a thin layer of metal oxide. Indium phosphide nanowires were grown by metal organic chemical vapor deposition on silicon substrates with gold catalyst resulting in three-dimensional nanowire networks, and optical properties were obtained from the collective nanowire networks. The networks were coated with an aluminum oxide thin film deposited by plasma-enhanced atomic layer deposition. We studied the dependence of the peak wavelength of photoluminescence spectra on the thickness of the oxide coatings. A continuous blue shift in photoluminescence spectra was observed when the thickness of the oxide coating was increased. The observed blue shift is attributed to the Burstein-Moss effect due to increased carrier concentration in the nanowire cores caused by repulsion from intrinsic negative fixed charges located at the inner oxide surface. Samples were further characterized by scanning electron microscopy, Raman spectroscopy, transmission electron microscopy, and selective area diffractometry to better understand the physical mechanisms for the blue shift. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Aluminum doping of CdTe polycrystalline films starting from the heterostructure CdTe/Al

    OpenAIRE

    Becerril, M.; O. Vigil-Galán; G. Contreras-Puente; O. Zelaya-Angel

    2011-01-01

    Aluminum doped CdTe polycrystalline films were obtained from the heterostructure CdTe/Al/Corning glass. The aluminum was deposited by thermal vacuum evaporation and the CdTe by sputtering of a CdTe target. The aluminum was introduced into the lattice of the CdTe from a thermal annealed to the CdTe/Al/Corning glas heterostructure. The electrical, structural, nd optical properties were analyzed as a function of the Al concentrations. It found that when Al is incorporated, the electrical resisti...

  20. [Sensitometry of Mammographic Screen-film System Using Bootstrap Aluminum Step-Wedge.].

    Science.gov (United States)

    Abe, Shinji; Imada, Ryou; Terauchi, Takashi; Fujisaki, Tatsuya; Monma, Masahiko; Nishimura, Katsuyuki; Saitoh, Hidetoshi; Mochizuki, Yasuo

    2005-01-01

    Recently, a few types of step-wedges for bootstrap sensitometry with a mammographic screen-film system have been proposed. In this study, the bootstrap sensitometry with the mammographic screen-film system was studied for two types of aluminum step-wedges. Characteristic X-ray energy curves were determined using mammographic and general radiographic aluminum step-wedges devised to prevent scattered X-rays generated from one step penetrating into the region of another one, and dependence of the characteristic curves on the wedges was also discussed. No difference was found in the characteristic curves due to the difference in the step-wedges for mammography and general radiography although there was a slight difference in shape at the shoulder portion for the two types of step-wedges. Therefore, it was concluded that aluminum step-wedges for mammography and general radiography could be employed in bootstrap sensitometry with the mammographic screen-film system. PMID:16479054

  1. Amorphous coatings deposited on aluminum alloy by plasma electrolytic oxidation

    Institute of Scientific and Technical Information of China (English)

    GUAN Yong-jun; XIA Yuan

    2005-01-01

    Amorphous [Al-Si-O] coatings were deposited on aluminum alloy by plasma electrolytic oxidation (PEO). The process parameters, composition, micrograph, and mechanical property of PEO amorphous coatings were investigated. It is found that the growth rate of PEO coatings reaches 4.44 μm/min if the current density is 0.9 mA/mm2. XRD results show that the PEO coatings are amorphous in the current density range of 0.3 - 0.9mA/mm2. EDS results show that the coatings are composed of O, Si and Al elements. SEM results show that the coatings are porous. Nano indentation results show that the hardness of the coatings is about 3 - 4 times of that of the substrate, while the elastic modulus is about the same with the substrate. Furthermore, a formation mechanism of amorphous PEO coatings was proposed.

  2. Fabrication of YBCO nanowires with anodic aluminum oxide (AAO) template

    Energy Technology Data Exchange (ETDEWEB)

    Dadras, Sedigheh, E-mail: dadras@alzahra.ac.ir; Aawani, Elaheh

    2015-10-15

    We have fabricated YBCO nanowires by using anodic aluminum oxide (AAO) template and sol–gel method, to investigate the fundamental properties of the one-dimensional nanostructure YBCO high-temperature superconductor and enhance its applications. The field-emission scanning electron microscopy and X-ray diffraction pattern results have shown forming of Y-123 nanowires in the template. As an outcome, the YBCO nanowires, prepared by dipping AAO template into YBCO sol method, have average diameter of about 38 nm and length of 1 μm; this is an optimum nanowire sample with larger diameter and length. The resistance–temperature measurement indicates that the onset critical temperature of these samples occurs at 91 K, and the resistance of the optimum sample at onset transition is 10 times lower than the other sample.

  3. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    OpenAIRE

    Yu-Hsien Lin; Jay-Chi Chou

    2015-01-01

    We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using different high-k gate dielectric materials such as silicon nitride (Si3N4) and aluminum oxide (Al2O3) at low temperature process (

  4. Epitaxial growth of zinc oxide thin films on silicon

    International Nuclear Information System (INIS)

    Epitaxial zinc oxide thin films were grown on Si(111) using aluminum nitride and magnesium oxide/titanium nitride buffer layers. The resultant films were examined using transmission electron microscopy, X-ray diffraction, electrical conductivity, and photoluminescence spectroscopy. The following epitaxial relationships were observed in the ZnO/AlN/Si(111) heterostructure: ZnO[0001] parallel AlN[0001] parallel Si[111] along the growth direction, and ZnO[21-bar 1-bar 0] parallel AlN[21-bar 1-bar 0] parallel Si[011-bar] along the in-plane direction. Domain-matching epitaxial growth of TiN on Si(111) substrate allows successful epitaxial growth of MgO and ZnO layers in a ZnO/MgO/TiN/Si(111) heterostructure. The epitaxial relationships observed for this heterostructure were ZnO[0001] parallel MgO/TiN/Si[111] along the growth direction and ZnO[21-bar 1-bar 0] parallel MgO/TiN/Si[011-bar] along in-plane direction. The resultant ZnO films demonstrate excellent electrical and optical properties. ZnO thin films exhibit extremely bright ultraviolet luminescence with relatively weak green-band emission

  5. Water clustering on nanostructured iron oxide films

    DEFF Research Database (Denmark)

    Merte, Lindsay Richard; Bechstein, Ralf; Peng, G.;

    2014-01-01

    , but it is not well-understood how these hydroxyl groups and their distribution on a surface affect the molecular-scale structure at the interface. Here we report a study of water clustering on a moire-structured iron oxide thin film with a controlled density of hydroxyl groups. While large amorphous monolayer...... islands form on the bare film, the hydroxylated iron oxide film acts as a hydrophilic nanotemplate, causing the formation of a regular array of ice-like hexameric nanoclusters. The formation of this ordered phase is localized at the nanometre scale; with increasing water coverage, ordered and amorphous...

  6. Measurement Of Quasiparticle Transport In Aluminum Films Using Tungsten Transition-Edge Sensors

    CERN Document Server

    Yen, J J; Young, B A; Cabrera, B; Brink, P L; Cherry, M; Kreikebaum, J M; Moffatt, R; Redl, P; Tomada, A; Tortorici, E C

    2014-01-01

    We report new experimental studies to understand the physics of phonon sensors which utilize quasiparticle diffusion in thin aluminum films into tungsten transition-edge-sensors (TESs) operated at 35 mK. We show that basic TES physics and a simple physical model of the overlap region between the W and Al films in our devices enables us to accurately reproduce the experimentally observed pulse shapes from x-rays absorbed in the Al films. We further estimate quasiparticle loss in Al films using a simple diffusion equation approach.

  7. Microstructures and properties of aluminum film and its effect on corrosion resistance of AZ31B substrate

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Aluminum films with thickness of 8.78-20.82 μm were deposited on the AZ31B magnesium alloys by DC magnetron sputtering.The influences of aluminum film on the micro-mechanical properties and corrosion behavior Of the magnesium alloys were investigated.The morphology of aluminam film was examined by seanning electron microscopy and the microstructure of aluminum film was analyzed by X-ray diffractometry.Nanoindentation and nanoscratch tests were conducted to investigate their micromechanical properties.Moreover,potentiodynamical polarization test performed in 3.5%NaCl solution was carried out to study their anticorrosion performances.The results show that the surface hardness of AZ31B magnesium alloy with aluminum film is 1.38-2.01GPa.higher than that of the magnesium alloy substrate.The critical load Of Al film/AZ31B substrate is in the range of 0.68-2.77 N.The corrosion current density of AZ31B with aluminum film is 2-3 orders of magnitude less than that of bare AZ31B.And the corrosion potential with aluminum film positively siftfls.Thus aluminum film can increase the corrosion resistance of Mg alloys obviously.

  8. Oxide films in high temperature aqueous environments

    International Nuclear Information System (INIS)

    The evaluation of modified water chemistries as well as of the effects of increased power output in nuclear power plants is associated with a need to understand their effect on occupational dose rates and on environmentally assisted cracking as well as other types of corrosion of structural materials. Occupational dose rates are due to activity build-up on the primary circuit components, which in turn depends on the dissolution, transport, deposition and incorporation of the activated corrosion products in the oxide films formed on material surfaces. Accordingly, activity build-up is influenced by the electrochemical and electric properties of the oxide films and by the water chemistry of the coolant. Concerning different types of corrosion, it can with good reason be assumed that both the oxidation reaction related to corrosion (e.g. crack growth) as well as the coupled cathodic reaction involve steps in which charged species are transported through the oxide films formed on material surfaces either within the crack or on surfaces exposed to the bulk coolant. It can also be stated that a sufficient characterisation and a satisfactory model for the electrochemical behaviour and electric properties of the oxide films formed in nuclear power plants are not available. More experimental support is needed concerning especially the preferential paths and driving forces for ion transport as well as the nature of mobile species or defects. The lack of sufficient understanding has complicated the assessment of the applicability and possible side-effects of e.g. noble metal water chemistry and the injection of zinc as a means to prevent the uptake of activated corrosion products into corrosion films. The long-term aim of the work performed within the present research program is to minimise the risk of activity build-up, environmentally assisted cracking (EAC) and other types of corrosion, as well as to be prepared for the evaluation and introduction of modified water

  9. Microstructural evolution of tungsten oxide thin films

    Science.gov (United States)

    Hembram, K. P. S. S.; Thomas, Rajesh; Rao, G. Mohan

    2009-10-01

    Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 °C were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a "instability wheel" model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

  10. Microstructural evolution of tungsten oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hembram, K.P.S.S., E-mail: hembram@isu.iisc.ernet.in [Department of Instrumentation, Indian Institute of Science, Bangalore - 560 012 (India); Theoretical Science Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore - 560064 (India); Thomas, Rajesh; Rao, G. Mohan [Department of Instrumentation, Indian Institute of Science, Bangalore - 560 012 (India)

    2009-10-30

    Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 deg. were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a 'instability wheel' model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.

  11. Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures

    Science.gov (United States)

    Tarala, V. A.; Altakhov, A. S.; Martens, V. Ya; Lisitsyn, S. V.

    2015-11-01

    Aluminum nitride films have been grown by Plasma-Enhanced Atomic Layer Deposition method. It was found that at temperatures of 250 °C and 280 °C increase of the plasma exposure step duration over 6 s, as well as increase of reactor purge step duration over 1 s does not affect the growth rate, however, it affects the microstructure of the films. It was found that crystalline aluminum nitride films deposit with plasma exposure duration over 10 s and the reactor purging over 10 s. When the temperature drops the increase of reactor purge step duration and plasma exposure step duration over 20 s is required for crystalline AlN film growth.

  12. Sapphire surface polariton splitting due to resonance with aluminum nitride film phonon

    Energy Technology Data Exchange (ETDEWEB)

    Yakovlev, V A; Novikova, N N; Vinogradov, E A [Institute for Spectroscopy. Russian Academy of Sciences, 142190, Troitsk, Moscow reg. (Russian Federation); Ng, S S; Hassan, Z; Hassan, H A, E-mail: yakovlev@isan.troitsk.r [School of Physics. Universiti Sains Malaysia, 11800, Penang (Malaysia)

    2010-02-01

    Two thin aluminum nitride films have been prepared on sapphire substrates by molecular beam epitaxy technique. Then alkaline and acidic washing were used to remove the back-metal-coating of the sapphire substrate for one of the samples. (It caused also partial film dissolution). The surface polariton (SP) spectra have been measured by attenuated total reflection (ATR) technique. The measured SP dispersion is compared with one calculated using the literature film parameters. Due to the resonance interaction of sapphire substrate SP with the film transverse optical (TO) phonon the splitting of the dispersion curve of sapphire SP was found. The resonance takes place only for the frequency of the film TO phonon polarized along the surface of the anisotropic AlN film (perpendicular to the optical axis). The analysis of ATR and external reflectivity spectra shows the presence of some transition layer between the substrate and the film.

  13. Preparation and Properties of Al-Ni Composite Anodic Films on Aluminum Surface

    Institute of Scientific and Technical Information of China (English)

    ZHAO Xuhui; YE Hao; ZHANG Xiaofeng; ZUO Yu

    2012-01-01

    Ni element was introduced to aluminum surface by a simple chemical immersion method,and Al-Ni composite anodic films were obtained by following anodizing.The morphology,structure and composition of the Al-Ni anodic films were examined by scanning electron microscopy (SEM),energy disperse spectroscopy (EDS) and atomic force microscopy(AFM).The electrochemical behaviors of the films were studied by means of polarization measurement and electrochemical impedance spectroscopy (EIS).The experimental results show that the A1-Ni composite anodic film is more compact with smaller pore diameters than that of the Al anodic film.The introduction of nickel increases the impedances of both the barrier layer and the porous layer of the anodic films.In NaCl solutions,the Al-Ni composite anodic films show higher impedance values and better corrosion resistance.

  14. Aluminum ions accelerated the oxidative stress of copper-mediated melanin formation

    Science.gov (United States)

    Di, Junwei; Bi, Shuping

    2003-11-01

    A comparison between the effects of aluminum and cupric ions on the dopachrome (DC) conversion and the cooperation effect of the both ions in the DOPA oxidation to melanin pathway has been studied by UV-Vis spectrophotometric method. Both aluminum and cupric ions catalyze the DC conversion reaction, which is an important step in the melanin synthesis pathway. However, cupric ions catalyze the conversion of DC to yield 5,6-dihydroxyindole-2-carboxylic acid (DHICA) but the product of DC conversion catalyzed by aluminum is 5,6-dihydroxyindole (DHI). DOPA oxidation catalyzed by aluminum and cupric ions is studied in the presence of hydrogen peroxide. The results from our experiments provide evidence that aluminum can markedly increase the oxidative stress of copper-mediated the melanin formation and influence the properties of the melanin by means of changing the ratio of DHICA/DHI in the acidic environment (pH 5.5).

  15. Effect of anneal pre-treatment of polycrystalline aluminum sheets on synthesis of highly-ordered anodic aluminum oxide membranes

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Anodic aluminum oxide (AAO) membranes with large ordered pore domains were successfully prepared by adopting the anneal pre-treatment of polycrystalline alu- minum sheets. A statistical method with Gaussian distribution was introduced to quantitatively study the size of the domain with ordered pores. The largest average area of ordered pore domains was 2.6 μm2±0.11 μm2. The corresponding AAO membrane was synthesized by aluminum sheets annealed at 893 K for 24 h.

  16. Preparation of Superhydrophobic Polymeric Film on Aluminum Plates by Electrochemical Polymerization

    Directory of Open Access Journals (Sweden)

    Juan Xu

    2009-11-01

    Full Text Available 6-(N-Allyl-1,1,2,2-tetrahydroperfluorododecylamino-1,3,5-triazine-2,4-dithiol monosodium (ATP was used to prepare polymeric thin films on pure aluminum plates to achieve a superhydrophobic surface. The electrochemical polymerization process of ATP on aluminum plates in NaNO2 aqueous solution and the formation of poly(6-(N-allyl-1,1,2,2-tetrahydroperfluorododecylamino-1,3,5-triazine-2,4-dithiol (PATP thin film were studied by means of optical ellipsometry and film weight. The chemical structure of the polymeric film is investigated using FT-IR spectra and X-ray photoelectron spectroscopy (XPS. Contact angle goniometry was applied to measure the contact angles with distilled water drops at ambient temperature. The experimental results indicate that the polymeric film formed on pure aluminum plates exhibits superhydrophobic properties with a distilled water contact angle of 153°. The electrochemical polymerization process is time-saving, inexpensive, environmentally friendly and fairly convenient to carry out. It is expected that this technique will advance the production of superhydrophobic materials with new applications on a large scale. Moreover, this kind of polymeric thin film can be used as a dielectric material due to its insulating features.

  17. Microtribological Mechanisms of Tungsten and Aluminum Nitride Films

    Science.gov (United States)

    Zhao, Hongjian; Mu, Chunyan; Ye, Fuxing

    2016-04-01

    Microtribology experiments were carried out on the W1- x Al x N films, deposited by radio frequency magnetron reactive sputtering on 304 stainless steel substrates and Si(100). Film wear mechanisms were investigated from the evolution of the friction coefficient and scanning electron microscopy observations. The results show that the WAlN films consist of a mixture of face-centered cubic W(Al)N and hexagonal wurtzite structure AlN phases and the preferred orientation changes from (111) to (200). The film damage after sliding test is mainly attributed to the composition and microstructure of the films. The amount of debris generated by friction is linked to the crack resistance. The better tribological properties for W1- x Al x N films ( x < 0.4) are mainly determined by the higher toughness.

  18. Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Harman, J.P.; Kabulski, A. (West Virginia U., Morgantown, WV); Pagan, V.R. (West Virginia U., Morgantown, WV); Famouri, K. (West Virginia U., Morgantown, WV); Kasarla, K.R.; Rodak, L.E. (West Virginia U., Morgantown, WV); Hensel, J.P.; Korakakis, D.

    2008-07-01

    The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

  19. Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Harman, J.; Kabulski, A.; Pagán, V. R.; Famouri, P.; Kasarla, K. R.; Rodak, L. E.; Peter Hensel, J.; Korakakis, D.

    2008-01-01

    The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

  20. Characterization of chitosan-magnesium aluminum silicate nanocomposite films for buccal delivery of nicotine

    DEFF Research Database (Denmark)

    Pongjanyakul, Thaned; Khunawattanakul, Wanwisa; Strachan, Clare J;

    2013-01-01

    The objective of this study was to prepare and characterize chitosan-magnesium aluminum silicate (CS-MAS) nanocomposite films as a buccal delivery system for nicotine (NCT). The effects of the CS-MAS ratio on the physicochemical properties, release and permeation, as well as on the mucoadhesive p...

  1. Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites

    Science.gov (United States)

    Ramadan, Khaled Sayed Elbadawi; Evoy, Stephane

    2015-01-01

    Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m-2 and 0.9±0.1 C m-2, for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported. PMID:26193701

  2. Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites.

    Science.gov (United States)

    Ramadan, Khaled Sayed Elbadawi; Evoy, Stephane

    2015-01-01

    Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m(-2) and 0.9±0.1 C m(-2), for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

  3. Hybrid aluminum and indium conducting filaments for nonpolar resistive switching of Al/AlOx/indium tin oxide flexible device

    Science.gov (United States)

    Yuan, Fang; Wang, Jer-Chyi; Zhang, Zhigang; Ye, Yu-Ren; Pan, Liyang; Xu, Jun; Lai, Chao-Sung

    2014-02-01

    The nonpolar resistive switching characteristics of an Al/AlOx/indium tin oxide (ITO) device on a plastic flexible substrate are investigated. By analyzing the electron diffraction spectroscopy results and thermal coefficient of resistivity, it is discovered that the formation of aluminum and indium conducting filaments in AlOx film strongly depends on the polarity of the applied voltage. The metal ions arising from the Al and ITO electrodes respectively govern the resistive switching in corresponding operation polarity. After 104 times of mechanical bending, the device can perform satisfactorily in terms of resistance distribution, read sequence of high and low resistive states, and thermal retention properties.

  4. Nanoporous Pirani sensor based on anodic aluminum oxide

    Science.gov (United States)

    Jeon, Gwang-Jae; Kim, Woo Young; Shim, Hyun Bin; Lee, Hee Chul

    2016-09-01

    A nanoporous Pirani sensor based on anodic aluminum oxide (AAO) is proposed, and the quantitative relationship between the performance of the sensor and the porosity of the AAO membrane is characterized with a theoretical model. The proposed Pirani sensor is composed of a metallic resistor on a suspended nanoporous membrane, which simultaneously serves as the sensing area and the supporting structure. The AAO membrane has numerous vertically-tufted nanopores, resulting in a lower measurable pressure limit due to both the increased effective sensing area and the decreased effective thermal loss through the supporting structure. Additionally, the suspended AAO membrane structure, with its outer periphery anchored to the substrate, known as a closed-type design, is demonstrated using nanopores of AAO as an etch hole without a bulk micromachining process used on the substrate. In a CMOS-compatible process, a 200 μm × 200 μm nanoporous Pirani sensor with porosity of 25% was capable of measuring the pressure from 0.1 mTorr to 760 Torr. With adjustment of the porosity of the AAO, the measurable range could be extended toward lower pressures of more than one decade compared to a non-porous membrane with an identical footprint.

  5. Fabrication of aluminum foam from aluminum scrap Hamza

    Directory of Open Access Journals (Sweden)

    O. A. Osman1 ,

    2015-02-01

    Full Text Available In this study the optimum parameters affecting the preparation of aluminum foam from recycled aluminum were studied, these parameters are: temperature, CaCO3 to aluminum scrap wt. ratio as foaming agent, Al2O3 to aluminum scrap wt. ratio as thickening agent, and stirring time. The results show that, the optimum parameters are the temperature ranged from 800 to 850oC, CaCO3 to aluminum scrap wt. ratio was 5%, Al2O3 to aluminum scrap wt. ratio was 3% and stirring time was 45 second with stirring speed 1200 rpm. The produced foam apparent densities ranged from 0.40-0.60 g/cm3. The microstructure of aluminum foam was examined by using SEM, EDX and XRD, the results show that, the aluminum pores were uniformly distributed along the all matrices and the cell walls covered by thin oxide film.

  6. Discharge behaviors during plasma electrolytic oxidation on aluminum alloy

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Run [Key Laboratory for Beam Technology and Materials Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875 (China); Beijing Radiation Center, Beijing 100875 (China); Zhenjiang Watercraft College, Zhenjiang 212000, Jiangsu (China); Wu, Jie [Key Laboratory for Beam Technology and Materials Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875 (China); Beijing Radiation Center, Beijing 100875 (China); Xue, Wenbin, E-mail: xuewb@bnu.edu.cn [Key Laboratory for Beam Technology and Materials Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875 (China); Beijing Radiation Center, Beijing 100875 (China); Qu, Yao; Yang, Chaolin; Wang, Bin; Wu, Xianying [Key Laboratory for Beam Technology and Materials Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875 (China); Beijing Radiation Center, Beijing 100875 (China)

    2014-11-14

    A plasma electrolytic oxidation (PEO) process was performed on the 2024 aluminum alloy in silicate electrolyte to fabricate ceramic coatings under a constant voltage. Optical emission spectroscopy (OES) was employed to evaluate the characteristics of plasma discharge during PEO process. The plasma electron temperature and density were obtained by analyzing the spectral lines of OES, and the atomic ionization degree in discharge zone was calculated in terms of Saha thermal ionization equation. The illumination intensity of plasma discharge and the temperature in the interior of alloy were measured. Combining the surface morphology and cross-sectional microstructure with the optical emission spectra and illumination at different discharge stage, a discharge model in the growth of PEO ceramic coatings was proposed. It is found that there are two discharge modes of type A with small spark size and type B with large spark size, and the latter only appears in the intermediate stage of PEO process. The illumination intensity has a maximum value in the initial stage of oxidation with many sparks of discharge type A. The electron temperature in plasma discharge zone is about 3000 K–7000 K and atomic ionization degree of Al is about 2.0 × 10{sup −5}–7.2 × 10{sup −3}, which depend on discharge stage. The discharge type B plays a key role on the electron temperature and atomic ionization degree. The electron density keeps stable in the range of about 8.5 × 10{sup 21} m{sup −3}–2.6 × 10{sup 22} m{sup −3}. - Highlights: • The characteristics of PEO plasma discharge was evaluated by OES. • Electron temperature, concentration, atomic ionization degree were calculated. • Discharge model for the growth of PEO coatings was proposed. • Temperature in the interior of alloy during PEO process was measured.

  7. Measurements of material properties for solar cells. [aluminum film and KAPTON

    Science.gov (United States)

    Castle, J. G., Jr.

    1978-01-01

    Measurements on two candidate materials for space flight are reported. The observed optical transmittance of aluminum films vapor deposited on fused quartz showed anomalously high transmittance thru 400 A and 600 A and showed an effective skin depth of 110 A in the latter part of the 1000 A thickness. KAPTON films are shown by their optical transmission spectra to have an energy gap for electron excitation of approximately 2.5 eV, which value depends on the thickness as manufactured. The resistance of KAPTON film to ionizing radiation is described by their optical spectra and their electron spin resonance spectra.

  8. Influences of different oxidants on the characteristics of HfAlOx films deposited by atomic layer deposition

    Institute of Scientific and Technical Information of China (English)

    Fan Ji-Bin; Liu Hong-Xia; Ma Fei; Zhuo Qing-Qing; Hao Yue

    2013-01-01

    A comparative study of two kinds of oxidants (H2O and O3) with the combinations of two metal precursors [trimethylaluminum (TMA) and tetrakis(ethylmethylamino) hafnium (TEMAH)] for atomic layer deposition (ALD) hafnium aluminum oxide (HfAlOx) films is carried out.The effects of different oxidants on the physical properties and electrical characteristics of HfAlOx films are studied.The preliminary testing results indicate that the impurity level of HfAlOx films grown with both H2O and O3 used as oxidants can be well controlled,which has significant effects on the dielectric constant,valence band,electrical properties,and stability of HfAlOx film.Additional thermal annealing effects on the properties of HfAlOx films grown with different oxidants are also investigated.

  9. Graphene oxide film as solid lubricant.

    Science.gov (United States)

    Liang, Hongyu; Bu, Yongfeng; Zhang, Junyan; Cao, Zhongyue; Liang, Aimin

    2013-07-10

    As a layered material, graphene oxide (GO) film is a good candidate for improving friction and antiwear performance of silicon-based MEMS devices. Via a green electrophoretic deposition (EPD) approach, GO films with tunable thickness in nanoscale are fabricated onto silicon wafer in a water solution. The morphology, microstructure, and mechanical properties as well as the friction coefficient and wear resistance of the films were investigated. The results indicated that the friction coefficient of silicon wafer was reduced to 1/6 its value, and the wear volume was reduced to 1/24 when using GO film as solid lubricant. These distinguished tribology performances suggest that GO films are expected to be good solid lubricants for silicon-based MEMS/NEMS devices. PMID:23786494

  10. Fractal dimension analysis of aluminum oxide particle for sandblasting dental use.

    Science.gov (United States)

    Oshida, Y; Munoz, C A; Winkler, M M; Hashem, A; Itoh, M

    1993-01-01

    Aluminum oxide particles are commonly used as a sandblasting media, particularly in dentistry, for multiple purposes including divesting the casting investment materials and increasing effective surface area for enhancing the mechanical retention strengths of succeedingly applied fired porcelain or luting cements. Usually fine aluminum oxide particles are recycled within the sandblasting machine. Ceramics such as aluminum oxides are brittle, therefore, some portions of recycling aluminum oxide particles might be brittle fractured. If fractured sandblasting particles are involved in the recycling media, it might result in irregularity metallic materials surface as well as the recycling sandblasting media itself be contaminated. Hence, it is necessary from both clinical and practical reasons to monitor the particle conditions in terms of size/shape and effectiveness of sandblasting, so that sandblasting dental prostheses can be fabricated in optimum and acceptable conditions. In the present study, the effect of recycling aluminum oxide particles on the surface texture of metallic materials was evaluated by Fractal Dimension Analysis (FDA). Every week the alumina powder was sampled and analyzed for weight fraction and contaminants. Surface texture of sandblasted standard samples was also characterized by FDA. Results indicate very little change in particle size, while the fractal dimension increased. Fractal dimension analysis showed that the aluminum oxide particle as a sandblasting media should be replaced after 30 or 40 min of total accumulated operation time.

  11. Crystallization kinetics of amorphous aluminum-tungsten thin films

    Energy Technology Data Exchange (ETDEWEB)

    Car, T.; Radic, N. [Rugjer Boskovic Inst., Zagreb (Croatia). Div. of Mater. Sci.; Ivkov, J. [Institute of Physics, Bijenicka 46, P.O.B. 304, HR-10000 Zagreb (Croatia); Babic, E.; Tonejc, A. [Faculty of Sciences, Physics Department, Bijenicka 32, P.O.B. 162, HR-10000 Zagreb (Croatia)

    1999-01-01

    Crystallization kinetics of the amorphous Al-W thin films under non-isothermal conditions was examined by continuous in situ electrical resistance measurements in vacuum. The estimated crystallization temperature of amorphous films in the composition series of the Al{sub 82}W{sub 18} to Al{sub 62}W{sub 38} compounds ranged from 800 K to 920 K. The activation energy for the crystallization and the Avrami exponent were determined. The results indicated that the crystallization mechanism in films with higher tungsten content was a diffusion-controlled process, whereas in films with the composition similar to the stoichiometric compound (Al{sub 4}W), the interface-controlled crystallization probably occurred. (orig.) With 4 figs., 1 tab., 26 refs.

  12. High quality transparent conducting oxide thin films

    Science.gov (United States)

    Gessert, Timothy A.; Duenow, Joel N.; Barnes, Teresa; Coutts, Timothy J.

    2012-08-28

    A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

  13. Formation and Morphology of Anodic Oxide Films of Ti

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The morphology and structure of the oxide films of Ti in H3PO4 were investigated by galvanostatic anodization, SEM and XRD. The oxide film grew from some pores in the grooves to layered microdomains as increasing anodizing voltage. The crystallinity of the oxide films decreased with the increase of the concentration of the electrolyte. The model has been proposed for the growth of the oxide films by two steps, i.e. by uniform thickening and by local deposition.

  14. Chemical interaction at the buried silicon/zinc oxide thin-film solar cell interface as revealed by hard X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Wimmer, M., E-mail: mark.wimmer@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Gerlach, D.; Wilks, R.G.; Scherf, S.; Félix, R. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Lupulescu, C. [Institute for Optics and Atomic Physics, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Ruske, F.; Schondelmaier, G.; Lips, K. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Hüpkes, J. [Institute for Energy Research, Forschungszentrum Jülich GmbH, Leo-Brandt-Straße, 52425 Jülich (Germany); Gorgoi, M. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Eberhardt, W. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institute for Optics and Atomic Physics, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Rech, B. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Bär, M., E-mail: marcus.baer@helmholtz-berlin.de [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Institut für Physik und Chemie, Brandenburgische Technische Universität Cottbus, Konrad-Wachsmann-Allee 1, 03046 Cottbus (Germany)

    2013-10-15

    Highlights: •We used HAXPES to identify chemical interactions at the buried silicon/aluminum-doped zinc oxide thin-film solar cell interface. •The results indicate a diffusion of zinc and aluminum into the silicon upon annealing procedures which are part of the solar cell processing. •The contamination of the silicon may be detrimental for the solar cell performance. -- Abstract: Hard X-ray photoelectron spectroscopy (HAXPES) is used to identify chemical interactions (such as elemental redistribution) at the buried silicon/aluminum-doped zinc oxide thin-film solar cell interface. Expanding our study of the interfacial oxidation of silicon upon its solid-phase crystallization (SPC), in which we found zinc oxide to be the source of oxygen, in this investigation we address chemical interaction processes involving zinc and aluminum. In particular, we observe an increase of zinc- and aluminum-related HAXPES signals after SPC of the deposited amorphous silicon thin films. Quantitative analysis suggests an elemental redistribution in the proximity of the silicon/aluminum-doped zinc oxide interface – more pronounced for aluminum than for zinc – as explanation. Based on these insights the complex chemical interface structure is discussed.

  15. Behavior of aluminum oxide, intermetallics and voids in Cu-Al wire bonds

    Energy Technology Data Exchange (ETDEWEB)

    Xu, H., E-mail: HXu14@bama.ua.edu [Department of Metallurgical and Materials Engineering, The University of Alabama, Tuscaloosa, AL 35487 (United States); Liu, C.; Silberschmidt, V.V. [Wolfson School of Mechanical and Manufacturing Engineering, Loughborough University, Loughborough LE11 3TU (United Kingdom); Pramana, S.S. [School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); White, T.J. [School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Centre for Advanced Microscopy, Australian National University, Canberra, ACT 2601 (Australia); Chen, Z. [School of Materials Science and Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Acoff, V.L. [Department of Metallurgical and Materials Engineering, The University of Alabama, Tuscaloosa, AL 35487 (United States)

    2011-08-15

    Nanoscale interfacial evolution in Cu-Al wire bonds during isothermal annealing from 175 deg. C to 250 deg. C was investigated by high resolution transmission electron microscopy (HRTEM). The native aluminum oxide film ({approx}5 nm thick) of the Al pad migrates towards the Cu ball during annealing. The formation of intermetallic compounds (IMC) is controlled by Cu diffusion, where the kinetics obey a parabolic growth law until complete consumption of the Al pad. The activation energies to initiate crystallization of CuAl{sub 2} and Cu{sub 9}Al{sub 4} are 60.66 kJ mol{sup -1} and 75.61 kJ mol{sup -1}, respectively. During IMC development, Cu{sub 9}Al{sub 4} emerges as a second layer and grows together with the initial CuAl{sub 2}. When Al is completely consumed, CuAl{sub 2} transforms to Cu{sub 9}Al{sub 4}, which is the terminal product. Unlike the excessive void growth in Au-Al bonds, only a few voids nucleate in Cu-Al bonds after long-term annealing at high temperatures (e.g., 250 {sup o}C for 25 h), and their diameters are usually in the range of tens of nanometers. This is due to the lower oxidation rate and volumetric shrinkage of Cu-Al IMC compared with Au-Al IMC.

  16. Silicon and aluminum doping effects on the microstructure and properties of polymeric amorphous carbon films

    Science.gov (United States)

    Liu, Xiaoqiang; Hao, Junying; Xie, Yuntao

    2016-08-01

    Polymeric amorphous carbon films were prepared by radio frequency (R.F. 13.56 MHz) magnetron sputtering deposition. The microstructure evolution of the deposited polymeric films induced by silicon (Si) and aluminum(Al) doping were scrutinized through infrared spectroscopy, multi-wavelength Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The comparative results show that Si doping can enhance polymerization and Al doping results in an increase in the ordered carbon clusters. Si and Al co-doping into polymeric films leads to the formation of an unusual dual nanostructure consisting of cross-linked polymer-like hydrocarbon chains and fullerene-like carbon clusters. The super-high elasticity and super-low friction coefficients (<0.002) under a high vacuum were obtained through Si and Al co-doping into the films. Unconventionally, the co-doped polymeric films exhibited a superior wear resistance even though they were very soft. The relationship between the microstructure and properties of the polymeric amorphous carbon films with different elements doping are also discussed in detail.

  17. Dielectric Properties of Polyimide Hybrid Film Doped with Nano Zirconium/Aluminum Oxide%纳米锆/铝氧化物杂化聚酰亚胺薄膜的介电性能

    Institute of Scientific and Technical Information of China (English)

    袁征; 范勇; 陈昊; 韩笑笑

    2011-01-01

    采用热液法制备了一系列不同Zr和Al比例的纳米粒子分散液,用原位聚合法分别制备了无机纳米杂化聚酰亚胺薄膜,并进行了SEM分析、电气强度和耐电晕测试.结果表明:Zr和A1的掺杂比例对杂化薄膜的耐电晕寿命及击穿场强影响较大,其耐电晕寿命最大可达Kapton100CR薄膜的4倍.%A series of nano-dispersions with different ratio of Zr and Al was prepared by hydrothermal method, and the corresponding inorganic nano-hybrid polyimide films were prepared through in-situ polymerization method. The hybrid film was characterized by SEM, electric strength and corona-resistant test. The results show that the doping ratio of Al and Zr has great effects on the corona-resistant life and breakdown strength of the hybrid film, and the maximum corona-resistant life is 4 times of that of Kapton 100 CR film.

  18. PLASMA POLYMER FILMS AS ADHESION PROMOTING PRIMERS FOR ALUMINUM. PART II: STRENGTH AND DURABILITY OF LAP JOINTS

    Science.gov (United States)

    Plasma polymerized hexamethyldisiloxane (HMDSO) films (~800 A in thickness) were deposited onto 6111-T4 aluminum substrates in radio frequency and microwave powered reactors and used as primers for structural adhesive bonding. Processing variables such as substrate pre-treatment,...

  19. Recording and tribological properties of CoNi magnetic films on chemically textured aluminum rigid disk substrates (abstract)

    Science.gov (United States)

    Tsuya, N.; Tokushima, T.; Hirayama, Y.; Oka, Y.

    1991-04-01

    In a rigid disk a very smooth surface is desirable for high density recording, while it tends to stick to the magnetic head. To avoid this difficulty, the mechanical texturing (M/T) is widely used. Unfortunately very low flying height can't be achieved with the M/T. To improve the flying height, authors have developed a new texturing process using anodically oxidized aluminum substrates named chemical texturing (C/T).1 Aluminum anodic oxide films have a regularly arranged honeycomb structure and uniform and roughness-controlled surfaces were formed by etching process of chemical texturing. In the present research, the relation between the recording and tribological properties and the etching conditions were investigated. On C/T substrates Cr, a longitudinal magnetic layer CoNi, C were sputtered in an inline sputtering equipment. The surface of the sputtered layer was flat (Rawrite, modulation and so on) were examined. In spite of isotropy on the disk surfaces, the modulation caused by the inline sputtering was not observed, and high coercive force of 1200 Oe was obtained. Tribological properties (gride height, CSS, friction) were measured. Gride height was lower than 0.1 μm, and CSS more than 30 000 cycles. In semi-pilot plant production, thousands of C/T disks were prepared. Yield of disks having less than 5 missing and/or extra pulses was higher than 95%.

  20. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Boltz, Janika

    2011-12-12

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post

  1. Innovative technique for tailoring intrinsic stress in reactively sputtered piezoelectric aluminum nitride films

    International Nuclear Information System (INIS)

    Novel technical and technological solutions enabling effective stress control in highly textured polycrystalline aluminum nitride (AlN) thin films deposited with ac (40 kHz) reactive sputtering processes are discussed. Residual stress in the AlN films deposited by a dual cathode S-Gun magnetron is well controlled by varying Ar gas pressure, however, since deposition rate and film thickness uniformity depend on gas pressure too, an independent stress control technique has been developed. The technique is based on regulation of the flux of the charged particles from ac plasma discharge to the substrate. In the ac powered S-Gun, a special stress adjustment unit (SAU) is employed for reducing compressive stress in the film by means of redistribution of discharge current between electrodes of the S-Gun leading to controllable suppression of bombardment of the growing film. This technique is complementary to AlN deposition with rf substrate bias which increases ion bombardment and shifts stress in the compressive direction, if required. Using SAU and rf bias functions ensures tailoring intrinsic stress in piezoelectric AlN films for a particular application from high compressive -700 MPa to high tensile +300 MPa and allows the gas pressure to be adjusted independently to fine control the film uniformity. The AlN films deposited on Si substrates and Mo electrodes have strong (002) texture with full width at half maximum ranging from 2 degree sign for 200 nm to 1 degree sign for 2000 nm thick films.

  2. A perspective of microplasma oxidation (MPO) and vapor deposition coatings in surface engineering of aluminum alloys

    Institute of Scientific and Technical Information of China (English)

    AWAD Samir Hamid; QIAN Han-cheng

    2004-01-01

    Over the past years, great achievements have been made in the development of coating technologies for surface improvement of aluminum alloys. Despite these achievements, the role in the market strongly depends on the ability of surface coating technology under technical and economic considerations to meet the increased demands for heavy tribological applications of aluminum alloys. Microplasma oxidation (MPO) technology has recently been studied as a novel and effective means to provide thick and hard ceramic coating with improved properties such as excellent load-bearing and wear resistance properties on aluminum alloys. The present work covers the evaluation of the performances of current single and duplex coatings combining MPO, physical vapor deposition (PVD), and plasma assisted chemical vapor deposition (PACVD) coatings on aluminum alloys. It suggests that the MPO coating is a promising candidate for design engineers to apply aluminum alloys to heavy load-bearing applications. The prospective future for the research on MPO coatings is introduced as well.

  3. Interaction of ester functional groups with aluminum oxide surfaces studied using infrared reflection absorption spectroscopy.

    Science.gov (United States)

    van den Brand, J; Blajiev, O; Beentjes, P C J; Terryn, H; de Wit, J H W

    2004-07-20

    The bonding of two types of ester group-containing molecules with a set of different oxide layers on aluminum has been investigated using infrared reflection absorption spectroscopy. The different oxide layers were made by giving typical surface treatments to the aluminum substrate. The purpose of the investigation was to find out what type of ester-oxide bond is formed and whether this is influenced by changes in the composition and chemistry of the oxide. The extent by which these bonded ester molecules resisted disbondment in water or substitution by molecules capable of chemisorption was also investigated. The ester groups were found to show hydrogen bonding with hydroxyls on the oxide surfaces through their carbonyl oxygens. For all oxides, the ester groups showed the same nu(C = O) carbonyl stretching vibration after adsorption, indicating very similar bonding occurs. However, the oxides showed differences in the amount of molecules bonded to the oxide surface, and a clear relation was observed with the hydroxyl concentration present on the oxide surface, which was determined from XPS measurements. The two compounds showed differences in the free to bonded nu(C = O) infrared peak shift, indicating differences in bonding strength with the oxide surface between the two types of molecules. The bonding of the ester groups with the oxide surfaces was found to be not stable in the presence of water and also not in the presence of a compound capable of chemisorption with the aluminum oxide surface. PMID:15248718

  4. Structure stability and corrosion inhibition of super-hydrophobic film on aluminum in seawater

    Energy Technology Data Exchange (ETDEWEB)

    Yin Yansheng [Institute of Ocean Materials and Engineering, Shanghai Maritime University, Shanghai 200135 (China)], E-mail: yys2003ouc@163.com; Liu Tao; Chen Shougang; Liu Tong; Cheng Sha [Institute of Materials Science and Engineering, Ocean University of China, Qingdao 266100 (China)

    2008-12-30

    A novel and stable super-hydrophobic film was prepared by myristic acid (CH{sub 3}(CH{sub 2}){sub 12}COOH, mya) chemically adsorbed onto the anodized aluminum surface. The static contact angle for seawater on the surface was measured to be 154 deg. As evidenced by molecular dynamics (MD) simulations and electrochemical impedance spectroscopy (EIS), the effect of ethanol solvent on the film stability was proved. The surface structure and composition were then characterized by means of scanning electron microscopy (SEM) with energy dispersive X-ray spectrum (EDS) and atomic force microscope (AFM). The electrochemical measurements showed that the super-hydrophobic surface significantly decreased the corrosion currents densities (i{sub corr}), corrosion rates and double layer capacitance (C{sub dl}), as simultaneously increased the values of polarization resistance (R{sub ct}) of aluminum in sterile seawater.

  5. Niobium-aluminum base alloys having improved, high temperature oxidation resistance

    Science.gov (United States)

    Hebsur, Mohan G. (Inventor); Stephens, Joseph R. (Inventor)

    1991-01-01

    A niobium-aluminum base alloy having improved oxidation resistance at high temperatures and consisting essentially of 48%-52% niobium, 36%-42% aluminum, 4%-10% chromium, 0%-2%, more preferably 1%-2%, silicon and/or tungsten with tungsten being preferred, and 0.1%-2.0% of a rare earth selected from the group consisting of yttrium, ytterbium and erbium. Parabolic oxidation rates, k.sub.p, at 1200.degree. C. range from about 0.006 to 0.032 (mg/cm.sup.2).sup.2 /hr. The new alloys also exhibit excellent cyclic oxidation resistance.

  6. Flexible gastrointestinal motility pressure sensors based on aluminum thin-film strain-gauge arrays

    OpenAIRE

    Silva, Luís Rebelo; Sousa, Paulo J.; L.M. Gonçalves; Minas, Graça

    2015-01-01

    This paper reports on an innovative approach to measuring intraluminal pressure in the upper gastrointestinal (GI) tract, especially monitoring GI motility and peristaltic movements. The proposed approach relies on thin-film aluminum strain gauges deposited on top of a Kapton membrane, which in turn lies on top of an SU-8 diaphragm-like structure. This structure enables the Kapton membrane to bend when pressure is applied, thereby affecting the strain gauges and effectively cha...

  7. High optical transmittance of aluminum ultrathin film with hexagonal nanohole arrays as transparent electrode

    KAUST Repository

    Du, Qing Guo

    2016-02-24

    We fabricate samples of aluminum ultrathin films with hexagonal nanohole arrays and characterize the transmission performance. High optical transmittance larger than 60% over a broad wavelength range from 430 nm to 750 nm is attained experimentally. The Fano-type resonance of the excited surface plasmon plaritons and the directly transmitted light attribute to both of the broadband transmission enhancement and the transmission suppression dips. © 2016 Optical Society of America.

  8. Electromigration induced resistance changes in passivated aluminum thin film conductors

    OpenAIRE

    Möckl, U. E.; Lloyd, J. R.; Arzt, Eduard

    1993-01-01

    The relative change in resistance due to electromigration was studied in thin (0.7 µm) film conductors of Al-0.5% Cu alloy passivated with a 1 µm thick glass passivation using a sensitive AC bridge technique. In contrast to previous experiments performed on unpassivated structures where a roughly linear resistance increase was observed, a saturation value for the resistance increase was observe which was seen to be a function of temperature and the applied current density. The results were fo...

  9. Aluminum thin film growth on a Ru(0001) surface

    Science.gov (United States)

    Ceballos, G.; Theis, M.; Pelzer, Th.; Schick, M.; Rangelov, G.; Wandelt, K.

    1995-07-01

    The growth of thin Al films on a Ru(0001) substrate has been investigated by means of AES, LEED, TDS, and PAX measurements. A plot of the Ru and Al AES intensities versus evaporation time for a deposition temperature of 300 K reveals a distinct break at θAl = 1, while for higher coverages the Ru intensity decays exponentially indicating a three-dimensional growth of Al clusters. From this behavior we deduce a Stranski-Krastanov growth mechanism. This behavior persists up to 650 K. For higher deposition temperatures a diffusion of Al into the substrate and a partial desorption of the Al film is found. At low Al coverage the LEED pattern reveals an initial film growth with Al(111) structure and an expansion of the interatomic spacing of 2% compared to the Al(111) bulk plane. This superstructure persisted up to ˜ 2.5 ML. In the submonolayer regime CO and Xe TD-spectra as well as Xe 4d PAX-spectra suggest together with LEED an island growth.

  10. Electrical analysis of niobium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Graça, M.P.F., E-mail: mpfg@ua.pt [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Saraiva, M. [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Freire, F.N.A. [Mechanics Engineering Department, Ceará Federal University, Fortaleza (Brazil); Valente, M.A.; Costa, L.C. [I3N & Physics Department, Aveiro University, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal)

    2015-06-30

    In this work, a series of niobium oxide thin films was deposited by reactive magnetron sputtering. The total pressure of Ar/O{sub 2} was kept constant at 1 Pa, while the O{sub 2} partial pressure was varied up to 0.2 Pa. The depositions were performed in a grounded and non-intentionally heated substrate, resulting in as-deposited amorphous thin films. Raman spectroscopy confirmed the absence of crystallinity. Dielectric measurements as a function of frequency (40 Hz–110 MHz) and temperature (100 K–360 K) were performed. The dielectric constant for the film samples with thickness (d) lower than 650 nm decreases with the decrease of d. The same behaviour was observed for the conductivity. These results show a dependence of the dielectric permittivity with the thin film thickness. The electrical behaviour was also related with the oxygen partial pressure, whose increment promotes an increase of the Nb{sub 2}O{sub 5} stoichiometry units. - Highlights: • Niobium oxide thin films were deposited by reactive magnetron sputtering. • XRD showed a phase change with the increase of the P(O{sub 2}). • Raman showed that increasing P(O{sub 2}), Nb{sub 2}O{sub 5} amorphous increases. • Conductivity tends to decrease with the increase of P(O{sub 2}). • Dielectric analysis indicates the inexistence of preferential grow direction.

  11. Electrical analysis of niobium oxide thin films

    International Nuclear Information System (INIS)

    In this work, a series of niobium oxide thin films was deposited by reactive magnetron sputtering. The total pressure of Ar/O2 was kept constant at 1 Pa, while the O2 partial pressure was varied up to 0.2 Pa. The depositions were performed in a grounded and non-intentionally heated substrate, resulting in as-deposited amorphous thin films. Raman spectroscopy confirmed the absence of crystallinity. Dielectric measurements as a function of frequency (40 Hz–110 MHz) and temperature (100 K–360 K) were performed. The dielectric constant for the film samples with thickness (d) lower than 650 nm decreases with the decrease of d. The same behaviour was observed for the conductivity. These results show a dependence of the dielectric permittivity with the thin film thickness. The electrical behaviour was also related with the oxygen partial pressure, whose increment promotes an increase of the Nb2O5 stoichiometry units. - Highlights: • Niobium oxide thin films were deposited by reactive magnetron sputtering. • XRD showed a phase change with the increase of the P(O2). • Raman showed that increasing P(O2), Nb2O5 amorphous increases. • Conductivity tends to decrease with the increase of P(O2). • Dielectric analysis indicates the inexistence of preferential grow direction

  12. Rayleigh scattering and luminescence blue shift in tris(8-hydroxyquinoline)aluminum films

    International Nuclear Information System (INIS)

    The Rayleigh scattering (RS) by independent small particles is a well-known effect which also accounts for the blue color of the sky. Lately, the blue shift of the greenish emission band of thin films of Alq3, tris(8-hydroxyquinoline)aluminum, after thermal treatments of various nature has been attributed to RS. Here, we show that RS effects cannot account for the observed spectral features, which are attributed to the onset of various molecular aggregations in the otherwise amorphous films, a morphological model already utilized to explain the optical properties of Alq3

  13. Luminescent down shifting effect of Ce-doped yttrium aluminum garnet thin films on solar cells

    International Nuclear Information System (INIS)

    Ce-doped yttrium aluminum garnet (YAG:Ce) thin films as luminescent down shifting (LDS) materials are introduced into the module of crystalline silicon solar cells. The films are deposited by RF magnetron sputtering on the lower surface of the quartz glass. They convert ultraviolet and blue light into yellow light. Experiments show that the introduction of YAG:Ce films improves the conversion efficiency from 18.45% of the cells to 19.27% of the module. The increasing efficiency is attributed to LDS effect of YAG:Ce films and the reduced reflection of short wavelength photons. Two intentionally selected samples with similar reflectivities are used to evaluate roughly the effect of LDS alone on the solar cells, which leads to a relative increase by 2.68% in the conversion efficiency

  14. Luminescent down shifting effect of Ce-doped yttrium aluminum garnet thin films on solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Guojian; Lou, Chaogang; Kang, Jian; Zhang, Hao [School of Electronic Science and Engineering, Southeast University, Nanjing 210096, Jiangsu Province (China)

    2015-12-21

    Ce-doped yttrium aluminum garnet (YAG:Ce) thin films as luminescent down shifting (LDS) materials are introduced into the module of crystalline silicon solar cells. The films are deposited by RF magnetron sputtering on the lower surface of the quartz glass. They convert ultraviolet and blue light into yellow light. Experiments show that the introduction of YAG:Ce films improves the conversion efficiency from 18.45% of the cells to 19.27% of the module. The increasing efficiency is attributed to LDS effect of YAG:Ce films and the reduced reflection of short wavelength photons. Two intentionally selected samples with similar reflectivities are used to evaluate roughly the effect of LDS alone on the solar cells, which leads to a relative increase by 2.68% in the conversion efficiency.

  15. Anomalous hexagonal superstructure of aluminum oxide layer grown on NiAl(110) surface

    Science.gov (United States)

    Krukowski, Pawel; Chaunchaiyakul, Songpol; Minagawa, Yuto; Yajima, Nami; Akai-Kasaya, Megumi; Saito, Akira; Kuwahara, Yuji

    2016-11-01

    A modified method for the fabrication of a highly crystallized layer of aluminum oxide on a NiAl(110) surface is reported. The fabrication method involves the multistep selective oxidation of aluminum atoms on a NiAl(110) surface resulting from successive oxygen deposition and annealing. The surface morphology and local electronic structure of the novel aluminum oxide layer were investigated by high-resolution imaging using scanning tunneling microscopy (STM) and current imaging tunneling spectroscopy. In contrast to the standard fabrication method of aluminum oxide on a NiAl(110) surface, the proposed method produces an atomically flat surface exhibiting a hexagonal superstructure. The superstructure exhibits a slightly distorted hexagonal array of close-packed bright protrusions with a periodicity of 4.5 ± 0.2 nm. Atomically resolved STM imaging of the aluminum oxide layer reveals a hexagonal arrangement of dark contrast spots with a periodicity of 0.27 ± 0.02 nm. On the basis of the atomic structure of the fabricated layer, the formation of α-Al2O3(0001) on the NiAl(110) surface is suggested.

  16. Preparation of Chromium Oxide Coatings on Aluminum Borate Whiskers by a Hydrothermal Deposition Process

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Aluminum borate whiskers (9Al2O32B2O3) can be used to reinforce aluminum alloys to produce light and strong composites. However, the adverse interfacial reactions between the whiskers and the aluminum alloys inhibit their practical uses; therefore, a protective coating is needed on whiskers. In this work, aluminum borate whiskers were coated with chromium-coating deposits in a hydrothermal solution containing CrCl3, Na2C4H4O6, NaPH2O2, and H3BO3. The presence of the impurity P in the hydrothermal deposits can be avoided by reducing the amount of NaPH2O2 in the coating solution. Thermodynamic analysis was used to discuss the behavior of ions in the coating process. The subsequent heating of the hydrothermal products in air at 800 ℃ yielded smooth Cr2O3 films with a thickness of 0.060.07 μm.

  17. Synthesis of aluminum nitride thin films and their potential applications in solid state thermoluminescence dosimeters

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, R.K., E-mail: rupeshkr@barc.gov.in [Materials Processing Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Soni, A. [Radiological Physics and Advisory Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Mishra, P. [Materials Processing Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Mishra, D.R.; Kulkarni, M.S. [Radiological Physics and Advisory Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

    2014-11-15

    In this work, aluminum nitride thin films were deposited on Si (1 1 1) substrate by magnetron sputtering. The obtained film was studied for thermoluminescence after irradiating it to various doses of γ-rays. Thermoluminescence measurement showed photon emission at an irradiation dose of 100 Gy or higher. Deconvolution of the experimental glow curve indicated that recombination centers in AlN were present below 2 eV trap depth. Irradiated AlN films showed less than 2% fading of TL signals on storage for 1 month in dark conditions and for the same period, light induced fading was also less than 4%. A linear variation of integrated thermoluminescence counts with absorbed dose has been observed up to an irradiation dose of 10 kGy. The deposited film was also characterized by grazing incidence X-ray diffraction, atomic force microscopy and secondary ion mass spectroscopy. Grazing incidence X-ray diffraction measurement of the obtained film has shown formation of polycrystalline wurtzite AlN having preferred orientation along (1 0 0) plane. Secondary ion mass spectroscopy analysis revealed the presence of oxygen in the film. - Highlights: • TL emission in sputter deposited AlN thin films when irradiated to gamma rays. • Linear dose–response up to 10 kGy irradiation dose. • Negligible fading of TL signals on storage. • Nominal light induced TL fading. • AlN thin films found potentially suitable for high dose dosimetry applications.

  18. Thermomechanical properties of aluminum alkoxide (alucone) films created using molecular layer deposition

    International Nuclear Information System (INIS)

    Nanometer-scale-thick, polymer-like coatings deposited using the molecular layer deposition (MLD) technique constitute a new class of materials. The modulus and hardness of aluminum alkoxide ('alucone') films grown using either homobifunctional or heterobifunctional reactants were measured using nanoindentation. Because the coatings are brittle and possess a significant tensile film stress immediately after deposition, the influence of film stress on the indentation measurements was quantified using a numerical analysis protocol. The film stress and coefficient of thermal expansion for alucone were determined using the wafer curvature method. Film stress was found to stabilize within the first thermal cycle, demonstrating a repeatable hysteresis thereafter. Curvature/time measurements on coated microcantilever beams indicated that the most significant evolution in film stress for alucone occurred during the initial 2 weeks of storage in the ambient environment. The temporal behavior is attributed to the change in thickness and/or modulus of alucone, and is consistent with the film stress becoming more compressive over time. An encapsulating alumina film, coated using the atomic layer deposition technique, was found to suppress the evolution of stress within alucone. The studies here suggest that the alucones have a greater elastic modulus than traditional polymers, are at present quite brittle and are prone to environmental influence. The MLD technique, however, possesses a rich wealth of options that enable the modulus, adhesion and chemical stability of the coatings to be tailored.

  19. Interfacial Assembly of Graphene Oxide Films

    Science.gov (United States)

    Valtierrez, Cain; Ismail, Issam; Macosko, Christopher; Stottrup, Benjamin

    Controlled assembly of monolayer graphene-oxide (GO) films at the air/water interface is of interest for the development of transparent conductive thin films of chemically-derived graphene. We present experimental results from investigations of the assembly of polydisperse GO sheets at the air-water interface. GO nanosheets with lateral dimensions of greater than 10 microns were created using a modified Tour synthesis (Dimiev and Tour, 2014). GO films were generated with conventional Langmuir trough techniques to control lateral packing density. Film morphology was characterized in situ with Brewster angle microscopy. Films were transferred unto a substrate via the Langmuir-Blodgett deposition technique and imaged with fluorescence quenching microscopy. Through pH modulation of the aqueous subphase, it was found that GO's intrinsic surface activity to the interface increased with increasing subphase acidity. Finally, we found a dominant elastic contribution during uniaxial film deformation as measured by anisotropic pressure measurements. A. M. Dimiev, and J. M. Tour, ``Mechanism of GO Formation,'' ACS Nano, 8, (2014)

  20. Lateral displacement in soft-landing process and electronic properties of size-selected Pt7 clusters on the aluminum oxide film on NiAl(1 1 0)

    Science.gov (United States)

    Beniya, Atsushi; Isomura, Noritake; Hirata, Hirohito; Watanabe, Yoshihide

    2013-06-01

    Adsorption states of size-selected Pt7 clusters soft-landed on an Al2O3/NiAl(1 1 0) were investigated using scanning tunneling microscopy and spectroscopy at 300 K. Pt7 clusters lay flat on the surface with a planar structure and were preferentially adsorbed on domain boundaries (DBs) of the Al2O3 film. Because the clusters are thermally immobile, adsorption to DBs is controlled by transient mobility on the surface. The mean lateral displacement by transient migration is estimated to be ˜8 nm. Distinct conductivity resonances through unoccupied states of the Pt7 clusters were observed near 2 V.

  1. Production of nickel oxide thin films by magnetron sputtering

    International Nuclear Information System (INIS)

    Discrepancies between short-circuit diffusion data derived from nickel oxide bicrystals and specimens produced by the oxidation of nickel has led to a requirement for thin film nickel oxide specimens of controlled microstructure and impurity level that can be produced independently of the oxidation process. RF magnetron sputtering of nickel oxide has been used to produce thin films intended for this application. The as-deposited films contain excess oxygen compared to stoichiometric nickel oxide and exhibit strong preferred orientation. Annealing in argon leads to oxygen deficient films. The reduction in porosity which accompanies the annealing leads to the formation of through-thickness cracks in the films. Subsequent oxygen tracer studies demonstrate that the cracks give rise to excessive oxygen transport through the films compared to that expected for thermally oxidised scales. The microstructural anomalies produced by the annealing process mean that the required microstructures were not achieved and these films are not useful analogues of thermal nickel oxide scales. (author)

  2. Combined optical gain and degradation measurements in DCM2 doped Tris-(8-hydroxyquinoline)aluminum thin-films

    Science.gov (United States)

    Čehovski, Marko; Döring, Sebastian; Rabe, Torsten; Caspary, Reinhard; Kowalsky, Wolfgang

    2016-04-01

    Organic laser sources offer the opportunity to integrate flexible and widely tunable lasers in polymer waveguide circuits, e.g. for Lab-on-Foil applications. Therefore, it is necessary to understand gain and degradation processes for long-term operation. In this paper we address the challenge of life-time (degradation) measurements of photoluminescence (PL) and optical gain in thin-film lasers. The well known guest-host system of aluminum-chelate Alq3 (Tris-(8-hydroxyquinoline)aluminum) as host material and the laser dye DCM2 (4-(Dicyanomethylene)-2- methyl-6-julolidyl-9-enyl-4H-pyran) as guest material is employed as laser active material. Sample layers have been built up by co-evaporation in an ultrahigh (UHV) vacuum chamber. 200nm thick films of Alq3:DCM2 with different doping concentrations have been processed onto glass and thermally oxidized silicon substrates. The gain measurements have been performed by the variable stripe length (VSL) method. This measurement technique allows to determine the thin-film waveguide gain and loss, respectively. For the measurements the samples were excited with UV irradiation (ƛ = 355nm) under nitrogen atmosphere by a passively Q-switched laser source. PL degradation measurements with regard to the optical gain have been done at laser threshold (approximately 3 μJ/cm2), five times above laser threshold and 10 times above laser threshold. A t50-PL lifetime of > 107 pulses could be measured at a maximum excitation energy density of 32 μJ/cm2. This allows for a detailed analysis of the gain degradation mechanism and therefore of the stimulated cross section. Depending on the DCM2 doping concentration C the stimulated cross section was reduced by 35 %. Nevertheless, the results emphasizes the necessity of the investigation of degradation processes in organic laser sources for long-term applications.

  3. Porous Nickel Oxide Film Sensor for Formaldehyde

    Science.gov (United States)

    Cindemir, U.; Topalian, Z.; Österlund, L.; Granqvist, C. G.; Niklasson, G. A.

    2014-11-01

    Formaldehyde is a volatile organic compound and a harmful indoor pollutant contributing to the "sick building syndrome". We used advanced gas deposition to fabricate highly porous nickel oxide (NiO) thin films for formaldehyde sensing. The films were deposited on Al2O3 substrates with prefabricated comb-structured electrodes and a resistive heater at the opposite face. The morphology and structure of the films were investigated with scanning electron microscopy and X-ray diffraction. Porosity was determined by nitrogen adsorption isotherms with the Brunauer-Emmett-Teller method. Gas sensing measurements were performed to demonstrate the resistive response of the sensors with respect to different concentrations of formaldehyde at 150 °C.

  4. Liquid crystal alignment in nanoporous anodic aluminum oxide layer for LCD panel applications.

    Science.gov (United States)

    Hong, Chitsung; Tang, Tsung-Ta; Hung, Chi-Yu; Pan, Ru-Pin; Fang, Weileun

    2010-07-16

    This paper reports the implementation and integration of a self-assembled nanoporous anodic aluminum oxide (np-AAO) film and liquid crystal (LC) on an ITO-glass substrate for liquid crystal display (LCD) panel applications. An np-AAO layer with a nanopore array acts as the vertical alignment layer to easily and uniformly align the LC molecules. Moreover, the np-AAO nanoalignment layer provides outstanding material properties, such as being inorganic with good transmittance, and colorless on ITO-glass substrates. In this application, an LCD panel, with the LC on the np-AAO nanoalignment layer, is successfully implemented on an ITO-glass substrate, and its performance is demonstrated. The measurements show that the LCD panel, consisting of an ITO-glass substrate and an np-AAO layer, has a transmittance of 60-80%. In addition, the LCD panel switches from a black state to a bright state at 3 V(rms), with a response time of 62.5 ms. In summary, this paper demonstrates the alignment of LC on an np-AAO layer for LCD applications.

  5. Electrically conducting polymer nanostructures confined in anodized aluminum oxide templates (AAO

    Directory of Open Access Journals (Sweden)

    I. Blaszczyk-Lezak

    2016-03-01

    Full Text Available Intrinsically or extrinsically conducting polymers are considered good candidates for replacement of metals in specific applications. In order to further expand their applications, it seems necessary to examine the influence of confinement effects on the electric properties of nanostructured conducting polymers in comparison to the bulk. The present study reports a novel way to fabricate and characterize high quality and controllable one-dimensional (1D polymer nanostructures with promising electrical properties, with the aid of two examples polyaniline (PANI and poly(vinylidene fluoride with multiwall carbon nanotubes (PVDF-MWCNT as representative of intrinsically and extrinsically conducting polymers, respectively. In this work, porous anodic aluminum oxide (AAO templates have been used both as a nanoreactor to synthesize 1D PANI nanostructures by polymerization of the ANI monomer and as a nanomold to prepare 1D PVDFMWCNT nanorods by melt infiltration of the precursor PVDF-MWCNT film. The obtained polymer nanostructures were morphologically and chemically characterized by SEM and Confocal Raman Spectroscopy, respectively, and the electrical properties determined by Broadband Dielectric Spectroscopy (BDS in a non-destructive way. SEM study allowed to establish the final nanostructure of PANI and PVDF-MWCNT and confirmed, in both cases, the well-aligned and uniform rodlike polymer nanostructures. Confocal Raman Microscopy has been performed to study the formation of the conducting emeraldine salt of PANI through all the length of AAO nanocavities. Finally, the electrical conductivity of both types of polymer nanostructures was easily evaluated by means of Dielectric Spectroscopy.

  6. Prediction model for oxide thickness on aluminum alloy cladding during irradiation

    International Nuclear Information System (INIS)

    An empirical model predicting the oxide film thickness on aluminum alloy cladding during irradiation has been developed as a function of irradiation time, temperature, heat flux, pH, and coolant flow rate. The existing models in the literature are neither consistent among themselves nor fit the measured data very well. They also lack versatility for various reactor situations such as a pH other than 5, high coolant flow rates, and fuel life longer than ∼1200 hrs. Particularly, they were not intended for use in irradiation situations. The newly developed model is applicable to these in-reactor situations as well as ex-reactor tests, and has a more accurate prediction capability. The new model demonstrated with consistent predictions to the measured data of UMUS and SIMONE fuel tests performed in the HFR, Petten, tests results from the ORR, and IRIS tests from the OSIRIS and to the data from the out-of-pile tests available in the literature as well. (author)

  7. Water Clustering on Nanostructured Iron Oxide Films

    Energy Technology Data Exchange (ETDEWEB)

    Merte, L. R.; Bechstein, Ralf; Peng, Guowen; Rieboldt, Felix; Farberow, Carrie A.; Zeuthen, Helene; Knudsen, Jan; Laegsgaard, E.; Wendt, Stefen; Mavrikakis, Manos; Besenbacher, Fleming

    2014-06-30

    The adhesion of water to solid surfaces is characterized by the tendency to balance competing molecule–molecule and molecule–surface interactions. Hydroxyl groups form strong hydrogen bonds to water molecules and are known to substantially influence the wetting behaviour of oxide surfaces, but it is not well-understood how these hydroxyl groups and their distribution on a surface affect the molecular-scale structure at the interface. Here we report a study of water clustering on a moire´-structured iron oxide thin film with a controlled density of hydroxyl groups. While large amorphous monolayer islands form on the are film, the hydroxylated iron oxide film acts as a hydrophilic nanotemplate, causing the formation of a regular array of ice-like hexameric nanoclusters. The formation of this ordered phase is localized at the nanometre scale; with increasing water coverage, ordered and amorphous water are found to coexist at adjacent hydroxylated and hydroxyl-free domains of the moire´ structure.

  8. Water clustering on nanostructured iron oxide films

    Science.gov (United States)

    Merte, Lindsay R.; Bechstein, Ralf; Peng, Guowen; Rieboldt, Felix; Farberow, Carrie A.; Zeuthen, Helene; Knudsen, Jan; Lægsgaard, Erik; Wendt, Stefan; Mavrikakis, Manos; Besenbacher, Flemming

    2014-06-01

    The adhesion of water to solid surfaces is characterized by the tendency to balance competing molecule-molecule and molecule-surface interactions. Hydroxyl groups form strong hydrogen bonds to water molecules and are known to substantially influence the wetting behaviour of oxide surfaces, but it is not well-understood how these hydroxyl groups and their distribution on a surface affect the molecular-scale structure at the interface. Here we report a study of water clustering on a moiré-structured iron oxide thin film with a controlled density of hydroxyl groups. While large amorphous monolayer islands form on the bare film, the hydroxylated iron oxide film acts as a hydrophilic nanotemplate, causing the formation of a regular array of ice-like hexameric nanoclusters. The formation of this ordered phase is localized at the nanometre scale; with increasing water coverage, ordered and amorphous water are found to coexist at adjacent hydroxylated and hydroxyl-free domains of the moiré structure.

  9. Study of oxide films on the surface of cadmium telluride

    International Nuclear Information System (INIS)

    Study of oxide films on surfaces of CdTe monocrystals is continued by methods of ellipsometry and by absorption in IR-spectral range. Index values of refruction of oxide films, produced by cadmium telluride oxidation in hydrogen peroxide solutions, in oxigen flow at 673 K and by anode oxidation, as a rule, differ essentially in dependence on method of production, that gives evidence of differences in these films composition. Oxide films, produced in oxygen flow, as opposed to films, produced by two other methods, have intensive absorption, characteristic for tellurite group. Film thickness, produced by oxidation in hydrogen peroxide and in oxygen flow, varies within rather wide limits with observance of externally similar conditions of production. By contrast to it, thickness of anode films is regulated reliably by anode potential

  10. Transparent conductive oxides for thin-film silicon solar cells

    Science.gov (United States)

    Löffler, J.

    2005-04-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150 º C and 350 º C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the cells

  11. Transparent Conductive Oxides for Thin-Film Silicon Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Loeffler, J.

    2005-04-25

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150C and 350C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the

  12. PEALD YSZ-based bilayer electrolyte for thin film-solid oxide fuel cells

    Science.gov (United States)

    Yu, Wonjong; Cho, Gu Young; Hong, Soonwook; Lee, Yeageun; Kim, Young Beom; An, Jihwan; Cha, Suk Won

    2016-10-01

    Yttria-stabilized zirconia (YSZ) thin film electrolyte deposited by plasma enhanced atomic layer deposition (PEALD) was investigated. PEALD YSZ-based bi-layered thin film electrolyte was employed for thin film solid oxide fuel cells on nanoporous anodic aluminum oxide substrates, whose electrochemical performance was compared to the cell with sputtered YSZ-based electrolyte. The cell with PEALD YSZ electrolyte showed higher open circuit voltage (OCV) of 1.0 V and peak power density of 182 mW cm-2 at 450 °C compared to the one with sputtered YSZ electrolyte(0.88 V(OCV), 70 mW cm-2(peak power density)). High OCV and high power density of the cell with PEALD YSZ-based electrolyte is due to the reduction in ohmic and activation losses as well as the gas and electrical current tightness.

  13. Cathodic electrolysis method of depositing cerium conversion films on industrial pure aluminum

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Two two-step techniques, called TS2/TS7 and TS3/TS7, respectively, have been developed to form cerium conversion films on the surface of industrial pure aluminum. The tested material was cathodically electrolyzed in the alkaline solution containing cerium salt, and uniform films containing cerium were obtained after the two-step treatment. It is found that the films obtained by TS2/TS7 and TS3/TS7 techniques are about 4.0 and 3.0 m in thickness, respectively. The material has better corrosion resistance in the chloride solution after the two-step electrolysis treatment compared with the one-step treated and naked specimens.

  14. Porous Spherical Cellulose Composites Coated by Aluminum (Ⅲ) Oxide and Silicone: Preparation,Characterization and Adsorption Behavior

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Porous spherical cellulose composite (PSCA) coated by aluminum (Ⅲ) oxide was prepared andmodified by organosilicone. SEM images of the surface morphology of the bead cellulose shows that it hasspherical shape and abundant porous structure on its surface. The mapping images of aluminum and silicon ofthe composite (PSCAS) present aluminum( Ⅲ ) oxide and silicone are uniformly dispersed on the surface. Theadsorption behavior of PSCAS toward metal ions was determined.

  15. Development of aluminum-doped ZnO films for a-Si∶H/μc-Si∶H solar cell applications

    Institute of Scientific and Technical Information of China (English)

    Lei Zhifang; Chen Guangyu; Gu Shibin; Dai Lingling; Yang Rong; Meng Yuan; Guo Ted

    2013-01-01

    This study deals with the optimization of direct current (DC) sputtered aluminum-doped zinc oxide (AZO) thin films and their incorporation into a-Si∶H/μc-Si∶H tandem junction thin film solar cells aiming for high conversion efficiency.Electrical and optical properties of AZO films,i.e.mobility,carrier density,resistivity,and transmittance,were comprehensively characterized and analyzed by varying sputtering deposition conditions,including chamber pressure,substrate temperature,and sputtering power.The correlations between sputtering processes and AZO thin film properties were first investigated.Then,the AZO films were textured by diluted hydrochloric acid wet etching.Through optimization of deposition and texturing processes,AZO films yield excellent electrical and optical properties with a high transmittance above 81% over the 380-1100 nm wavelength range,low sheet resistance of 11 Ω/□ and high haze ratio of 41.3%.In preliminary experiments,the AZO films were applied to a-Si∶H/μc-Si∶H tandem thin film solar cells as front contact electrodes,resulting in an initial conversion efficiency of 12.5% with good current matching between subcells.

  16. Epitaxial copper oxide thin films deposited on cubic oxide substrates

    International Nuclear Information System (INIS)

    We study the growth conditions of Cu2O thin films deposited on MgO (0 0 1) and SrTiO3 (0 0 1) substrates by pulsed laser ablation, in order to explore the compatibility between semiconducting p-type Cu2O and other perovskite oxides in view of the fabrication of oxide electronics heterostructures. We find that in both cases perfect epitaxy, high crystalline quality and good out-of-plane orientation are achieved. In this context, epitaxy plays a major role in driving the phase formation. On the other hand, in films deposited at temperatures higher than 700 deg. C transport is inhibited by poor grain connectivity, which is an inevitable consequence of the necessity for the crystal to release the lattice strain. Instead, better connectivity and bulk-like values of resistivity, as well as good crystallinity and orientation, are obtained for films deposited at 650 deg. C. This should be kept in mind for the fabrication of stacked layer oxide heterostructures, where deep grooves between adjacent grains would be a serious drawback both for vertical and planar transport

  17. Characterization and Tribological Properties of Hard Anodized and Micro Arc Oxidized 5754 Quality Aluminum Alloy

    Directory of Open Access Journals (Sweden)

    M. Ovundur

    2015-03-01

    Full Text Available This study was initiated to compare the tribological performances of a 5754 quality aluminum alloy after hard anodic oxidation and micro arc oxidation processes. The structural analyses of the coatings were performed using XRD and SEM techniques. The hardness of the coatings was determined using a Vickers micro-indentation tester. Tribological performances of the hard anodized and micro arc oxidized samples were compared on a reciprocating wear tester under dry sliding conditions. The dry sliding wear tests showed that the wear resistance of the oxide coating generated by micro arc oxidation is remarkably higher than that of the hard anodized alloy.

  18. Corrosion behavior of aluminum doped diamond-like carbon thin films in NaCl aqueous solution.

    Science.gov (United States)

    Khun, N W; Liu, E

    2010-07-01

    Aluminum doped diamond-like carbon (DLC:Al) thin films were deposited on n-Si(100) substrates by co-sputtering a graphite target under a fixed DC power (650 W) and an aluminum target under varying DC power (10-90 W) at room temperature. The structure, adhesion strength and surface morphology of the DLC:Al films were characterized by X-ray photoelectron spectroscopy (XPS), micro-scratch testing and atomic force microscopy (AFM), respectively. The corrosion performance of the DLC:Al films was investigated by means of potentiodynamic polarization testing in a 0.6 M NaCl aqueous solution. The results showed that the polarization resistance of the DLC:Al films increased from about 18 to 30.7 k(omega) though the corrosion potentials of the films shifted to more negative values with increased Al content in the films. PMID:21128496

  19. Co-sputtered oxide thin film encapsulated organic electronic devices with prolonged lifetime

    Energy Technology Data Exchange (ETDEWEB)

    Wong, F.L.; Fung, M.K.; Ng, C.Y.; Ng, A.; Bello, I.; Lee, S.T.; Lee, C.S., E-mail: apcslee@cityu.edu.hk

    2011-11-30

    Effective top-side thin film encapsulation for organic light-emitting devices (OLEDs) was achieved by deposition of a multi-layer water diffusion barrier stack to protect the device against moisture permeation. The barrier stack was formed by alternative depositions of co-oxide and fluorocarbon (CF{sub x}) films. The co-oxide layer was fabricated by magnetron co-sputtering of silicon dioxide (SiO{sub 2}) and aluminum oxide (Al{sub 2}O{sub 3}). While the CF{sub x} layer was formed by plasma enhanced chemical vapor deposition. The water vapor transmission rate of the optimized diffusion barrier stack can be down to 10{sup -6} g/m{sup 2}/day. The OLEDs encapsulated with the multilayer stack have been shown to have operation lifetime of over 18,000 h which is nearly the same as devices with conventional glass-cover encapsulation.

  20. Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates

    Science.gov (United States)

    Jin, Lichuan; Zhang, Dainan; Zhang, Huaiwu; Fang, Jue; Liao, Yulong; Zhou, Tingchuan; Liu, Cheng; Zhong, Zhiyong; Harris, Vincent G.

    2016-09-01

    Germanium Tin (GeSn) films have drawn great interest for their visible and near-infrared optoelectronics properties. Here, we demonstrate large area Germanium Tin nanometer thin films grown on highly flexible aluminum foil substrates using low-temperature molecular beam epitaxy (MBE). Ultra-thin (10–180 nm) GeSn film-coated aluminum foils display a wide color spectra with an absorption wavelength ranging from 400–1800 nm due to its strong optical interference effect. The light absorption ratio for nanometer GeSn/Al foil heterostructures can be enhanced up to 85%. Moreover, the structure exhibits excellent mechanical flexibility and can be cut or bent into many shapes, which facilitates a wide range of flexible photonics. Micro-Raman studies reveal a large tensile strain change with GeSn thickness, which arises from lattice deformations. In particular, nano-sized Sn-enriched GeSn dots appeared in the GeSn coatings that had a thickness greater than 50 nm, which induced an additional light absorption depression around 13.89 μm wavelength. These findings are promising for practical flexible photovoltaic and photodetector applications ranging from the visible to near-infrared wavelengths.

  1. Large area Germanium Tin nanometer optical film coatings on highly flexible aluminum substrates

    Science.gov (United States)

    Jin, Lichuan; Zhang, Dainan; Zhang, Huaiwu; Fang, Jue; Liao, Yulong; Zhou, Tingchuan; Liu, Cheng; Zhong, Zhiyong; Harris, Vincent G.

    2016-01-01

    Germanium Tin (GeSn) films have drawn great interest for their visible and near-infrared optoelectronics properties. Here, we demonstrate large area Germanium Tin nanometer thin films grown on highly flexible aluminum foil substrates using low-temperature molecular beam epitaxy (MBE). Ultra-thin (10–180 nm) GeSn film-coated aluminum foils display a wide color spectra with an absorption wavelength ranging from 400–1800 nm due to its strong optical interference effect. The light absorption ratio for nanometer GeSn/Al foil heterostructures can be enhanced up to 85%. Moreover, the structure exhibits excellent mechanical flexibility and can be cut or bent into many shapes, which facilitates a wide range of flexible photonics. Micro-Raman studies reveal a large tensile strain change with GeSn thickness, which arises from lattice deformations. In particular, nano-sized Sn-enriched GeSn dots appeared in the GeSn coatings that had a thickness greater than 50 nm, which induced an additional light absorption depression around 13.89 μm wavelength. These findings are promising for practical flexible photovoltaic and photodetector applications ranging from the visible to near-infrared wavelengths. PMID:27667259

  2. Metallic Thin-Film Bonding and Alloy Generation

    Science.gov (United States)

    Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Peotter, Brian S. (Inventor); Droppers, Lloyd (Inventor)

    2016-01-01

    Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

  3. Enhancement of oxidation resistance of NBD 200 silicon nitride ceramics by aluminum implantation

    Science.gov (United States)

    Mukundhan, Priya

    Silicon nitride (Si3N4) ceramics are leading candidates for high temperature structural applications. They have already demonstrated functional capabilities well beyond the limits of conventional metals and alloys in advanced diesel and turbine engines. However, the practical exploitation of these benefits is limited by their oxidation and associated degradation processes in chemically aggressive environments. Additives and impurities in Si3N4 segregate to the surface of Si3N 4 and accelerate its high temperature oxidation process. This study aims to investigate the oxidation behavior of Norton NBD 200 silicon nitride (hot isostatically pressed with ˜1 wt.% MgO) and its modification by aluminum surface alloying. NBD 200 samples tribochemically polished to a mirror finish (10 nm) were implanted with 5, 10, 20 and 30 at.% aluminum at multienergies and multi-doses to achieve a uniform implant depth distribution to 200 nm. Unimplanted and aluminum-implanted samples were oxidized at 800°--1100°C in 1 atm O2 for 0.5--10 hours. Oxidation kinetics was determined using profilometry in conjunction with etch patterning. The morphological, structural and chemical characteristics of the oxide were characterized by various analytical techniques such as scanning electron microscope and energy dispersive x-ray analysis, secondary ion mass spectrometry and x-ray photoelectron spectroscopy. Oxidation of NBD 200 follows parabolic kinetics in the temperature range investigated and the process is diffusion-controlled. The oxide layers are enriched with sodium and magnesium from the bulk of the Si3N 4. The much higher oxidation rate for NBD 200 silicon nitride than for other silicon nitride ceramics with a similar amount of MgO is attributed to the presence of sodium. The rate-controlling mechanism is the outward diffusion of Mg2+ from the grain boundaries to the oxide scale. Aluminum implantation alleviates the detrimental effects of Na+ and Mg2+; not only is the rate of oxidation

  4. Copper oxide thin films for ethanol sensing

    Science.gov (United States)

    Lamri Zeggar, M.; Bourfaa, F.; Adjimi, A.; Aida, M. S.; Attaf, N.

    2016-03-01

    The present is a study of a new active layer for ethanol (C2H5OH) vapour sensing devices based on copper oxide (CuO). CuO films were prepared by spray ultrasonic pyrolysis at a substrate temperature of 350 °C. Films microstructure was examined by X-ray diffraction and atomic force microscopy. Vapour-sensing testing was conducted using static vapour-sensing system, at different operating temperatures in the range of 100°C to 175°C for the vapour concentration of 300 ppm. The results show a high response of 45% at relatively low operating temperatures of 150°C towards ethanol vapour.

  5. In-situ measurement of the electrical conductivity of aluminum oxide in HFIR

    Energy Technology Data Exchange (ETDEWEB)

    Zinkle, S.J.; White, D.P.; Snead, L.L. [Oak Ridge National Lab., TN (United States)] [and others

    1996-10-01

    A collaborative DOE/Monbusho irradiation experiment has been completed which measured the in-situ electrical resistivity of 12 different grades of aluminum oxide during HFIR neutron irradiation at 450{degrees}C. No evidence for bulk RIED was observed following irradiation to a maximum dose of 3 dpa with an applied dc electric field of 200 V/mm.

  6. Propagation of nonequilibrium phonons in aluminum-oxide ceramics fabricated by cold isostatic pressing

    International Nuclear Information System (INIS)

    Propagation of slightly nonequilibrium phonons in aluminum-oxide ceramics fabricated by cold isostatic pressing has been studied. Assuming that phonon propagation in ceramic grains is ballistic, we have analyzed characteristics of the phonon scattering and drawn some conclusions about the nature of grain boundaries

  7. Standard specification for nuclear-grade aluminum oxide-boron carbide composite pellets

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2005-01-01

    1.1 This specification applies to pellets composed of mixtures of aluminum oxide and boron carbide that may be ultimately used in a reactor core, for example, in neutron absorber rods. 1.2 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.

  8. Chinalco Joined Hands With Shenhua To Build 4 Million Tonnes of Aluminum Oxide Project in Hebei

    Institute of Scientific and Technical Information of China (English)

    2015-01-01

    In the afternoon of September 11,Governor of Hebei Province Zhang Qingwei met with the delegation led by Chinalco Chairman Ge Honglin and General Manager of Shenhua Group Ling Wen in Shijiazhuang,and attended the cooperation agreement signing ceremony for aluminum oxide project between the

  9. Fabrication, structural characterization and sensing properties of polydiacetylene nanofibers templated from anodized aluminum oxide

    Science.gov (United States)

    Polydiacetylene (PDA), a unique conjugated polymer, has shown its potential in the application of chem/bio-sensors and optoelectronics. In this work, we first infiltrated PDA monomer (10, 12-pentacosadiynoic acid, PCDA) melted into the anodized aluminum oxide template, and then illuminated the infil...

  10. Electrochromism: from oxide thin films to devices

    Science.gov (United States)

    Rougier, A.; Danine, A.; Faure, C.; Buffière, S.

    2014-03-01

    In respect of their adaptability and performance, electrochromic devices, ECDs, which are able to change their optical properties under an applied voltage, have received significant attention. Target applications are multifold both in the visible region (automotive sunroofs, smart windows, ophthalmic lenses, and domestic appliances (oven, fridge…)) and in the infrared region (Satellites Thermal Control, IR furtivity). In our group, focusing on oxide thin films grown preferentially at room temperature, optimization of ECDs performances have been achieved by tuning the microstructure, the stoichiometry and the cationic composition of the various layers. Herein, our approach for optimized ECDs is illustrated through the example of WO3 electrochromic layer in the visible and in the IR domain as well as ZnO based transparent conducting oxide layer. Targeting the field of printed electronics, simplification of the device architecture for low power ECDs is also reported.

  11. Luminescence of oxide films during the electrolytic oxidation of tantalum

    International Nuclear Information System (INIS)

    Highlights: • Electrolytic oxidation of tantalum in phosphoric acid and oxalic acid. • Galvanoluminescence (GL) is related to the existence of flaws in oxide coating. • GL is more intense for higher current density and higher electrolyte temperature. • GL shows wide bands mostly in the visible and near infrared spectral region. • Spectrum under spark discharging reveals only oxygen and hydrogen lines. - Abstract: Luminescence during a constant current electrolytic oxidation of tantalum in phosphoric acid and oxalic acid is investigated. Weak anodic luminescence (galvanoluminescence) of barrier oxide films during the electrolytic oxidation is correlated to the existence of surface imperfections. Galvanoluminescence is more intense for rougher tantalum samples, higher current density, and higher electrolyte temperature. Spectral characterization of galvanoluminescence showed that there are wide luminescence bands mostly in the visible and near infrared spectral region. Small sized sparks generated by dielectric breakdown cause rapidly increasing luminescence intensity. The luminescence spectrum under spark discharging has several intensive peaks caused by electronic transitions in oxygen and hydrogen atoms

  12. Laser sintering of magnesia with nanoparticles of iron oxide and aluminum oxide

    Energy Technology Data Exchange (ETDEWEB)

    García, L.V.; Mendivil, M.I.; Roy, T.K. Das; Castillo, G.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Cd. Universitaria, San Nicolas de los Garza, Nuevo Leon 66451 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Cd. Universitaria, San Nicolas de los Garza, Nuevo Leon 66451 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2015-05-01

    Highlights: • Laser sintered MgO pellets with nanoparticles of Al{sub 2}O{sub 3} and Fe{sub 2}O{sub 3}. • Characterized these pellets by XRD, SEM and XPS. • Spinel formations were observed in both cases. • Changes in morphology and structure were analyzed. - Abstract: Nanoparticles of iron oxide (Fe{sub 2}O{sub 3}, 20–40 nm) and aluminum oxide (Al{sub 2}O{sub 3}, 50 nm) were mixed in different concentrations (3, 5 and 7 wt%) in a magnesium oxide (MgO) matrix. The mixture pellet was irradiated with 532 nm output from a Q-switched Nd:YAG laser using different laser fluence and translation speed for sintering. The refractory samples obtained were analyzed using X-ray diffraction technique, scanning electron microscopy and X-ray photoelectron spectroscopy. The results showed that the samples irradiated at translation speed of 110 μm/s and energy fluence of 1.7 J/cm{sup 2} with a concentration of 5 and 7 wt% of Fe{sub 2}O{sub 3} presented the MgFe{sub 2}O{sub 4} spinel-type phase. With the addition of Al{sub 2}O{sub 3} nanoparticles, at a translation speed of 110 μm/s and energy fluence of 1.7 J/cm{sup 2}, there were the formations of MgAl{sub 2}O{sub 4} spinel phase. The changes in morphologies and microstructure due to laser irradiation were analyzed.

  13. Electrochromism of the electroless deposited cuprous oxide films

    International Nuclear Information System (INIS)

    Thin cuprous oxide films were prepared by a low cost, chemical deposition (electroless) method onto glass substrates pre-coated with fluorine doped tin oxide. The X-ray diffraction pattern confirmed the Cu2O composition of the films. Visible transmittance spectra of the cuprous oxide films were studied for the as-prepared, colored and bleached films. The cyclic voltammetry study showed that those films exhibited cathode coloring electrochromism, i.e. the films showed change of color from yellowish to black upon application of an electric field. The transmittance across the films for laser light of 670 nm was found to change due to the voltage change for about 50%. The coloration memory of those films was also studied during 6 h, ex-situ. The coloration efficiency at 670 nm was calculated to be 37 cm2/C

  14. Electrochromism of the electroless deposited cuprous oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Neskovska, R. [Faculty of Technical Sciences, University ' St. Clement Ohridski' , Bitola (Macedonia, The Former Yugoslav Republic of); Ristova, M. [Faculty of Natural Sciences and Mathematics, Institute of Physics, P.O. Box 162, Skopje (Macedonia, The Former Yugoslav Republic of)]. E-mail: mristova@iunona.pmf.ukim.edu.mk; Velevska, J. [Faculty of Natural Sciences and Mathematics, Institute of Physics, P.O. Box 162, Skopje (Macedonia, The Former Yugoslav Republic of); Ristov, M. [Macedonian Academy of Sciences and Arts, Skopje, Bul. Krste Misirkov bb, Skopje (Macedonia, The Former Yugoslav Republic of)

    2007-04-09

    Thin cuprous oxide films were prepared by a low cost, chemical deposition (electroless) method onto glass substrates pre-coated with fluorine doped tin oxide. The X-ray diffraction pattern confirmed the Cu{sub 2}O composition of the films. Visible transmittance spectra of the cuprous oxide films were studied for the as-prepared, colored and bleached films. The cyclic voltammetry study showed that those films exhibited cathode coloring electrochromism, i.e. the films showed change of color from yellowish to black upon application of an electric field. The transmittance across the films for laser light of 670 nm was found to change due to the voltage change for about 50%. The coloration memory of those films was also studied during 6 h, ex-situ. The coloration efficiency at 670 nm was calculated to be 37 cm{sup 2}/C.

  15. Formation of linear polyenes in poly(vinyl alcohol) films catalyzed by phosphotungstic acid, aluminum chloride, and hydrochloric acid

    Science.gov (United States)

    Tretinnikov, O. N.; Sushko, N. I.; Malyi, A. B.

    2016-07-01

    Formation of linear polyenes-(CH=CH)n-via acid-catalyzed thermal dehydration of polyvinyl alcohol in 9- to 40-µm-thick films of this polymer containing hydrochloric acid, aluminum chloride, and phosphotungstic acid as dehydration catalysts was studied by electronic absorption spectroscopy. The concentration of long-chain ( n ≥ 8) polyenes in films containing phosphotungstic acid is found to monotonically increase with the duration of thermal treatment of films, although the kinetics of this process is independent of film thickness. In films containing hydrochloric acid and aluminum chloride, the formation rate of polyenes with n ≥ 8 rapidly drops as film thickness decreases and the annealing time increases. As a result, at a film thickness of less than 10-12 µm, long-chain polyenes are not formed at all in these films no matter how long thermal duration is. The reason for this behavior is that hydrochloric acid catalyzing polymer dehydration in these films evaporates from the films during thermal treatment, the evaporation rate inversely depending on film thickness.

  16. Atomic layer deposition of aluminum sulfide thin films using trimethylaluminum and hydrogen sulfide

    International Nuclear Information System (INIS)

    Sequential exposures of trimethylaluminum and hydrogen sulfide are used to deposit aluminum sulfide thin films by atomic layer deposition (ALD) in the temperature ranging from 100 to 200 °C. Growth rate of 1.3 Å per ALD cycle is achieved by in-situ quartz crystal microbalance measurements. It is found that the growth rate per ALD cycle is highly dependent on the purging time between the two precursors. Increased purge time results in higher growth rate. Surface limited chemistry during each ALD half cycle is studied by in-situ Fourier transformed infrared vibration spectroscopy. Time of flight secondary ion-mass spectroscopy measurement is used to confirm elemental composition of the deposited films

  17. Structural properties of a-Si films and their effect on aluminum induced crystallization

    International Nuclear Information System (INIS)

    In this paper, we report the influence of the structural properties of amorphous silicon (a-Si) on its subsequent crystallization behavior via the aluminum induced crystallization (AIC) method. Two distinct a-Si deposition techniques, electron beam evaporation and plasma enhanced chemical vapor deposition (PECVD), are compared for their effect on the overall AIC kinetics as well as the properties of the final poly-crystalline (poly-Si) silicon film. Raman and FTIR spectroscopy results indicate that the PECVD grown a-Si films has higher intermediate-range order, which is enhanced for increased hydrogen dilution during deposition. With increasing intermediate-range order of the a-Si, the rate of AIC is diminished, leading larger poly-Si grain size

  18. Wetting behavior and drag reduction of superhydrophobic layered double hydroxides films on aluminum

    Science.gov (United States)

    Zhang, Haifeng; Yin, Liang; Liu, Xiaowei; Weng, Rui; Wang, Yang; Wu, Zhiwen

    2016-09-01

    We present a novel method to fabricate Zn-Al LDH (layered double hydroxides) film with 3D flower-like micro-and nanostructure on the aluminum foil. The wettability of the Zn-Al LDH film can be easily changed from superhydrophilic to superhydrophobic with a simple chemical modification. The as-prepared superhydrophobic surfaces have water CAs (contact angles) of 165 ± 2°. In order to estimate the drag reduction property of the surface with different adhesion properties, the experimental setup of the liquid/solid friction drag is proposed. The drag reduction ratio for the as-prepared superhydrophobic sample is 20-30% at low velocity. Bearing this in mind, we construct superhydrophobic surfaces that have numerous technical applications in drag reduction field.

  19. [The color of implants of aluminum oxide ceramics].

    Science.gov (United States)

    Willmann, G

    1990-12-01

    Ceramic implants are manufactured from aluminium oxide ceramics (Al2O3) doped with magnesium oxide (MgO). The yellow or brown discoloration following gamma-sterilization does not constitute a material defect, but rather a property of the material. This chromic effect is explained in the following article. PMID:2078648

  20. Aluminum Nitride Formation From Aluminum Oxide/Phenol Resin Solid-Gel Mixture By Carbothermal Reduction Nitridation Method

    Directory of Open Access Journals (Sweden)

    Mylinh Dang Thy

    2015-06-01

    Full Text Available Hexagonal and cubic crystalline aluminum nitride (AlN particles were successfully synthesized using phenol resin and alpha aluminum oxide (α-Al2O3 as precursors through new solid-gel mixture and carbothermal reduction nitridaton (CRN process with molar ratio of C/Al2O3 = 3. The effect of reaction temperature on the decomposition of phenol resin and synthesis of hexagonal and cubic AlN were investigated and the reaction mechanism was also discussed. The results showed that α-Al2O3 powder in homogeneous solid-gel precursor was easily nitrided to yield AlN powder during the carbothermal reduction nitridation process. The reaction temperature needed for a complete conversion for the precursor was about 1700°C, which much lower than that when using α-Al2O3 and carbon black as starting materials. To our knowledge, phenol resin is the first time to be used for synthesizing AlN powder via carbothermal reduction and nitridation method, which would be an efficient, economical, cheap assistant reagent for large scale synthesis of AlN powder.

  1. The oxidation of aluminum at high temperature studied by Thermogravimetric Analysis and Differential Scanning Calorimetry.

    Energy Technology Data Exchange (ETDEWEB)

    Coker, Eric Nicholas

    2013-10-01

    The oxidation in air of high-purity Al foil was studied as a function of temperature using Thermogravimetric Analysis with Differential Scanning Calorimetry (TGA/DSC). The rate and/or extent of oxidation was found to be a non-linear function of the temperature. Between 650 and 750 ÀC very little oxidation took place; at 850 ÀC oxidation occurred after an induction period, while at 950 ÀC oxidation occurred without an induction period. At oxidation temperatures between 1050 and 1150 ÀC rapid passivation of the surface of the aluminum foil occurred, while at 1250 ÀC and above, an initial rapid mass increase was observed, followed by a more gradual increase in mass. The initial rapid increase was accompanied by a significant exotherm. Cross-sections of oxidized specimens were characterized by scanning electron microscopy (SEM); the observed alumina skin thicknesses correlated qualitatively with the observed mass increases.

  2. Oxidation phase growth diagram of vanadium oxides film fabricated by rapid thermal annealing

    Institute of Scientific and Technical Information of China (English)

    Tamura KOZO; Zheng-cao LI; Yu-quan WANG; Jie NI; Yin HU; Zheng-jun ZHANG

    2009-01-01

    Thermal evaporation deposited vanadium oxide films were annealed in air by rapid thermal annealing (RTP). By adjusting the annealing temperature and time, a series of vanadium oxide films with various oxidation phases and surface morphologies were fabricated, and an oxidation phase growth diagram was established. It was observed that different oxidation phases appear at a limited and continuous annealing condition range, and the morphologic changes are related to the oxidation process.

  3. Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tamm, Aile, E-mail: aile.tamm@ut.ee; Kozlova, Jekaterina; Aarik, Lauri; Aarik, Jaan [Institute of Physics, University of Tartu, Ravila 14c, EE-50411 Tartu (Estonia); Kukli, Kaupo [University of Helsinki, FI-00014 Helsinki (Finland); Link, Joosep; Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia)

    2015-01-15

    Dysprosium oxide and dysprosium-oxide-doped titanium oxide thin films were grown by atomic layer deposition on silicon substrates. For depositing dysprosium and titanium oxides Dy(thd){sub 3}-O{sub 3} and TiCl{sub 4}-O{sub 3} were used as precursors combinations. Appropriate parameters for Dy(thd){sub 3}-O{sub 3} growth process were obtained by using a quartz crystal microbalance system. The Dy{sub 2}O{sub 3} films were deposited on planar substrates and on three-dimensional substrates with aspect ratio 1:20. The Dy/Ti ratio of Dy{sub 2}O{sub 3}-doped TiO{sub 2} films deposited on a planar silicon substrate ranged from 0.04 to 0.06. Magnetometry studies revealed that saturation of magnetization could not be observed in planar Dy{sub 2}O{sub 3} films, but it was observable in Dy{sub 2}O{sub 3} films on 3D substrates and in doped TiO{sub 2} films with a Dy/Ti atomic ratio of 0.06. The latter films exhibited saturation magnetization 10{sup −6} A cm{sup 2} and coercivity 11 kA/m at room temperature.

  4. Combined flame and electrodeposition synthesis of energetic coaxial tungsten-oxide/aluminum nanowire arrays.

    Science.gov (United States)

    Dong, Zhizhong; Al-Sharab, Jafar F; Kear, Bernard H; Tse, Stephen D

    2013-09-11

    A nanostructured thermite composite comprising an array of tungsten-oxide (WO2.9) nanowires (diameters of 20-50 nm and lengths of >10 μm) coated with single-crystal aluminum (thickness of ~16 nm) has been fabricated. The method involves combined flame synthesis of tungsten-oxide nanowires and ionic-liquid electrodeposition of aluminum. The geometry not only presents an avenue to tailor heat-release characteristics due to anisotropic arrangement of fuel and oxidizer but also eliminates or minimizes the presence of an interfacial Al2O3 passivation layer. Upon ignition, the energetic nanocomposite exhibits strong exothermicity, thereby being useful for fundamental study of aluminothermic reactions as well as enhancing combustion characteristics. PMID:23899165

  5. Tribological properties of solid lubricating film/microarc oxidation coating on Al alloys

    Institute of Scientific and Technical Information of China (English)

    LUO Zhuang-zi; ZHANG Zhao-zhu; LIU Wei-min; TIAN Jun

    2005-01-01

    A process for preparation of solid lubricating films on micro-arc oxidation(MAO) coating was introduced to provide self-lubricating and wear-resistant multilayer coatings for aluminum alloys. The friction and wear behavior of various burnished and bonded solid lubricating films on the as-deposited and polished micro-arc oxidation coatings sliding against steel and ceramic counterparts was evaluated with a Timken tester and a reciprocating friction and wear tester, respectively. The burnished and bonded solid lubricating films on the polished micro-arc oxidation coatings are superior to the as-deposited ones in terms of the wear resistant behavior, because they lead to strengthened interfacial adhesion between the soft lubricating top-film and the hard polished MAO sub-coating, which helps increase the wear resistance of the solid lubricating film on multilayer coating. Thus the multilayer coatings are potential candidates as self-lubricating and wear-resistant coatings for Al alloy parts in engineering applications.

  6. Effects of aluminum and extremely low frequency electromagnetic radiation on oxidative stress and memory in brain of mice.

    Science.gov (United States)

    Deng, Yuanxin; Zhang, Yanwen; Jia, Shujie; Liu, Junkang; Liu, Yanxia; Xu, Weiwei; Liu, Lei

    2013-12-01

    This study was aimed to investigate the effect of aluminum and extremely low-frequency magnetic fields (ELF-MF) on oxidative stress and memory of SPF Kunming mice. Sixty male SPF Kunming mice were divided randomly into four groups: control group, ELF-MF group (2 mT, 4 h/day), load aluminum group (200 mg aluminum/kg, 0.1 ml/10 g), and ELF-MF + aluminum group (2 mT, 4 h/day, 200 mg aluminum/kg). After 8 weeks of treatment, the mice of three experiment groups (ELF-MF group, load aluminum group, and ELF-MF + aluminum group) exhibited firstly the learning memory impairment, appearing that the escaping latency to the platform was prolonged and percentage in the platform quadrant was reduced in the Morris water maze (MWM) task. Secondly are the pathologic abnormalities including neuronal cell loss and overexpression of phosphorylated tau protein in the hippocampus and cerebral cortex. On the other hand, the markers of oxidative stress were determined in mice brain and serum. The results showed a statistically significant decrease in superoxide dismutase activity and increase in the levels of malondialdehyde in the ELF-MF group (P < 0.05 or P < 0.01), load aluminum group (P < 0.01), and ELF-MF + aluminum group (P < 0.01). However, the treatment with ELF-MF + aluminum induced no more damage than ELF-MF and aluminum did, respectively. In conclusion, both aluminum and ELF-MF could impact on learning memory and pro-oxidative function in Kunming mice. However, there was no evidence of any association between ELF-MF exposure with aluminum loading.

  7. Mechanical spectroscopy of nanocrystalline aluminum films: effects of frequency and grain size on internal friction.

    Science.gov (United States)

    Sosale, Guruprasad; Almecija, Dorothée; Das, Kaushik; Vengallatore, Srikar

    2012-04-20

    Energy dissipation by internal friction is a property of fundamental interest for probing the effects of scale on mechanical behavior in nanocrystalline metallic films and for guiding the use of these materials in the design of high-Q micro/nanomechanical resonators. This paper describes an experimental study to measure the effects of frequency, annealing and grain size on internal friction at room temperature in sputter-deposited nanocrystalline aluminum films with thicknesses ranging from 60 to 120 nm. Internal friction was measured using a single-crystal silicon microcantilever platform that calibrates dissipation against the fundamental limits of thermoelastic damping. Internal friction was a weak function of frequency, reducing only by a factor of two over three decades of frequency (70 Hz to 44 kHz). Annealing led to significant grain growth and the average grain size of 100 nm thick films increased from 90 to 390 nm after annealing for 1 h at 450 (∘)C. This increase in grain size was accompanied by a decrease in internal friction from 0.05 to 0.02. Taken together, these results suggest that grain-boundary sliding, characterized by a spectrum of relaxation times, contributes to internal friction in these films. PMID:22436133

  8. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

    2013-05-01

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

  9. Optical and vibrational spectra analysis of CVD - mixed oxide films: Optimization of the films electrochromic performance

    Energy Technology Data Exchange (ETDEWEB)

    Ivanova, T; Gesheva, K A [Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); Abrashev, M [Faculty of Physics, St. Kl. Ohridski University of Sofia, 5 J. Bourchier Blvd., 1164 Sofia (Bulgaria); Sharlandjiev, P; Nazarova, D, E-mail: kagesh@phys.bas.b [Central Laboratory of Optical Storage and Processing of Information, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 101, 1113 Sofia (Bulgaria)

    2010-04-01

    Mixed oxide films based on Mo and W were successfully prepared by atmospheric pressure CVD at the low substrate temperature of 200{sup o}C. High amount of oxygen was used to ensure a high degree of oxidation resulting in more stoichiometric oxide films. The structural transformations under different thermal treatments were studied by Raman spectroscopy and FTIR spectroscopy analysis. The films were characterized electrochemically by cyclic voltammetry using different electrolytes, scan rates, etc. The mixed oxide films exhibited a strong electrochromic (EC) effect.

  10. Optical and vibrational spectra analysis of CVD - mixed oxide films: Optimization of the films electrochromic performance

    International Nuclear Information System (INIS)

    Mixed oxide films based on Mo and W were successfully prepared by atmospheric pressure CVD at the low substrate temperature of 200oC. High amount of oxygen was used to ensure a high degree of oxidation resulting in more stoichiometric oxide films. The structural transformations under different thermal treatments were studied by Raman spectroscopy and FTIR spectroscopy analysis. The films were characterized electrochemically by cyclic voltammetry using different electrolytes, scan rates, etc. The mixed oxide films exhibited a strong electrochromic (EC) effect.

  11. Growth and Characterization of Epitaxial Oxide Thin Films

    OpenAIRE

    Garg, Ashish

    2001-01-01

    Epitaxial oxide thin films are used in many technologically important device applications. This work deals with the deposition and characterization of epitaxial WO3 and SrBi2Ta2O9 (SBT) thin films on single crystal oxide substrates. WO3 thin films were chosen as a subject of study because of recent findings of superconductivity at surfaces and twin boundaries in the bulk form of this oxide. Highly epitaxial thin films would be desirable in order to be able to create a device withi...

  12. Chitosan–silver oxide nanocomposite film: Preparation and antimicrobial activity

    Indian Academy of Sciences (India)

    Shipra Tripathi; G K Mehrotra; P K Dutta

    2011-02-01

    The chitosan–silver oxide encapsulated nanocomposite film was prepared by solution casting method. The prepared film was characterized by FTIR, scanning electron microscopy (SEM), thermal studies, and UV-Vis spectroscopy. The elemental composition of the film was studied by energy dispersive X-ray analysis (EDAX). The antibacterial activity of the composite film against pathogenic bacteria viz. Escherichia coli, Staphylococcus aureus, Bacillus subtilis and Pseudomonas aeruginosa was measured by agar diffusion method. Our observations suggest that chitosan as biomaterial based nanocomposite film containing silver oxide has an excellent antibacterial ability for food packaging applications.

  13. Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

    Directory of Open Access Journals (Sweden)

    Chun Zhao

    2014-10-01

    Full Text Available Oxide materials with large dielectric constants (so-called high-k dielectrics have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs. A novel characterization (pulse capacitance-voltage method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k dielectrics based on the Metal Oxide Semiconductor (MOS capacitor structure. The variation of flat-band voltages of the MOS structure was observed and discussed accordingly. Some interesting trapping/detrapping results related to the lanthanide aluminum oxide traps were identified for possible application in Flash memory technology. After understanding the trapping/detrapping mechanism of the high-k oxides, a solid foundation was prepared for further exploration into charge-trapping non-volatile memory in the future.

  14. Fabrication of SERS-active substrates using silver nanofilm-coated porous anodic aluminum oxide for detection of antibiotics.

    Science.gov (United States)

    Chen, Jing; Feng, Shaolong; Gao, Fang; Grant, Edward; Xu, Jie; Wang, Shuo; Huang, Qian; Lu, Xiaonan

    2015-04-01

    We have developed a silver nanofilm-coated porous anodic aluminum oxide (AAO) as a surface-enhanced Raman scattering (SERS)-active substrate for the detection of trace level of chloramphenicol, a representative antibiotic in food systems. The ordered aluminum template generated during the synthesis of AAO serves as a patterned matrix on which a coated silver film replicates the patterned AAO matrix to form a 2-dimensional ordered nanostructure. We used atomic force microscopy and scanning electron microscopy images to determine the morphology of this nanosubstrate, and characterized its localized surface plasmon resonance by ultraviolet-visible reflection. We gauged the SERS effect of this nanosubstrate by confocal micro-Raman spectroscopy (782-nm laser), finding a satisfactory and consistent performance with enhancement factors of approximately 2 × 10(4) and a limit of detection for chloramphenicol of 7.5 ppb. We applied principal component analysis to determine the limit of quantification for chloramphenicol of 10 ppb. Using electromagnetic field theory, we developed a detailed mathematical model to explain the mechanism of Raman signal enhancement of this nanosubstrate. With simple sample pretreatment and separation steps, this silver nanofilm-coated AAO substrate could detect 50 ppb chloramphenicol in milk, indicating good potential as a reliable SERS-active substrate for rapid detection of chemical contaminants in agricultural and food products.

  15. Analysis of Intermetallic Phases Formed on Surface Vapor Oxidized H13 Hot Work Steels in Molten Aluminum

    Institute of Scientific and Technical Information of China (English)

    WANGRong; WUXiao-chun; MINYong-an

    2004-01-01

    In this paper, the author dipped surface vapor oxidized H13 steel specimens into 700℃ molten aluminum liquid for a certain period of time. Analyze the intermetallic phases formed on the H 13 samples surface with optical microscope and X-ray diffraction method. The observation of immersion test sample's cross-section shows that Fe304 film will protect die substrate from molten aluminum erosion. The identification of the intermetallic phases reveals that they consist of 2 parts, which is named as the composite layer and the compact layer. Further investigations are made in order to know the phase constituents of the 2 layers, they are Al8Fe2Si (outer composite layer), (AlCuMg) and Al5Fe2 (compact layer), respectively. The experimental results show that on the same specimen, a convex surface with bigger radius of curvature is more likely to be molten and the melting loss speed is also faster than a flat and smooth surface. The thickness of compact layer on a smooth surface is much bigger than that of the convex surface. Therefore, the author supposes the compact layer is favorable in stabilizing the die surface material from further melting loss, as their formation on the die surface, the melting loss speed will decrease.

  16. Analysis of Intermetallic Phases Formed on Surface Vapor Oxidized H13 Hot Work Steels in Molten Aluminum

    Institute of Scientific and Technical Information of China (English)

    WANG Rong; WU Xiao-chun; MIN Yong-an

    2004-01-01

    In this paper, the author dipped surface vapor oxidized H13 steel specimens into 700℃ molten aluminum liquid for a certain period of time. Analyze the intermetallic phases formed on the H13 samples surface with optical microscope and X-ray diffraction method. The observation of immersion test sample's cross-section shows that Fe3O4 film will protect die substrate from molten aluminum erosion. The identification of the intermetallic phases reveals that they consist of 2parts, which is named as the composite layer and the compact layer. Further investigations are made in order to know the phase constituents of the 2 layers, they are Al8Fe2Si (outer composite layer), (AlCuMg) and Al5Fe2 (compact layer),respectively. The experimental results show that on the same specimen, a convex surface with bigger radius of curvature is more likely to be molten and the melting loss speed is also faster than a flat and smooth surface. The thickness of compact layer on a smooth surface is much bigger than that of the convex surface. Therefore, the author supposes the compact layer is favorable in stabilizing the die surface material from further melting loss, as their formation on the die surface, the melting loss speed will decrease.

  17. Highly Transparent and Flexible Triboelectric Nanogenerators with Subwavelength-Architectured Polydimethylsiloxane by a Nanoporous Anodic Aluminum Oxide Template.

    Science.gov (United States)

    Dudem, Bhaskar; Ko, Yeong Hwan; Leem, Jung Woo; Lee, Soo Hyun; Yu, Jae Su

    2015-09-23

    Highly transparent and flexible triboelectric nanogenerators (TENGs) were fabricated using the subwavelength-architectured (SWA) polydimethylsiloxane (PDMS) with a nanoporous anodic aluminum oxide (AAO) template as a replica mold. The SWA PDMS could be utilized as a multifunctional film for a triboelectric layer, an antireflection coating, and a self-cleaning surface. The nanopore arrays of AAO were formed by a simple, fast, and cost-effective electrochemical oxidation process of aluminum, which is relatively impressive for fabrication of the TENG device. For electrical contacts, the SWA PDMS was laminated on the indium tin oxide (ITO)-coated polyethylene terephthalate (PET) as a bottom electrode, and the bare ITO-coated PET (i.e., ITO/PET) was used for the top electrode. Compared to the ITO/PET, the SWA PDMS on the ITO/PET improved the transmittance from 80.5 to 83% in the visible wavelength region and also had high transmittances of >85% at wavelengths of 430-455 nm. The SWA PDMS also exhibited the hydrophobic surface with a water contact angle (θCA) of ∼115°, which can be useful for self-cleaning applications. The average transmittance (Tavg) of the entire TENG device was observed to be ∼70% over a broad wavelength range. At an external pushing frequency of 0.5 Hz, for the TENG device with the ITO top electrode, open-circuit voltage (VOC) and short-circuit current (ISC) values of ∼3.8 V and ∼0.8 μA were obtained instantaneously, respectively, which were higher than those (i.e., VOC ≈ 2.2 V, and ISC ≈ 0.4 μA) of the TENG device with a gold top electrode. The effect of external pushing force and frequency on the output device performance of the TENGs was investigated, including the device robustness. A theoretical optical analysis of SWA PDMS was also performed. PMID:26301328

  18. The Relationship Between Ambiently Formed Oxides and the Tribological Behavior of Aluminum Bronze

    Science.gov (United States)

    Poggie, Robert Andre

    1992-01-01

    The relationship between ambiently formed oxides and the tribological behavior of aluminum bronze has been investigated. As the aluminum content of Al-bronze increases from zero to eight weight percent, the mechanical properties, oxidation kinetics, and tribological behavior of the alloy are significantly affected. This research has shown that the friction and wear behavior of Al-bronze depends primarily on the composition and mechanical stability of the ambiently formed surface oxide. Adhesive transfer of Al-bronze to the slider counterfaces increased with increasing aluminum content which corresponded to increased damage to the alloy surfaces and the formation of wear debris. The majority of surface damage (plastic deformation and galling) of the Cu-4 and 6 w/o Al alloys occurred during the initial portion (run-in) of wear testing. The Cu-1 w/o Al alloy wore via an oxidative wear mechanism throughout the course of wear testing. Galling, severe plastic deformation, the formation of metallic wear debris, and adhesive transfer were not observed for the Cu-1 AL w/o alloy. XPS and SEM analysis of the Cu-1 w/o Al alloy showed the worn surfaces to consist of a smooth and adherent Cu_2O layer. Long term ambient oxidation of the Cu-4 and 6 w/o Al alloys resulted in a layered oxide structure with Cu(OH)_2 at the surface followed by CuO, Cu_2O, Al_2O_3, and, lastly, the metallic substrate. The differences in elastic moduli, crystal structures, and composition between the copper alloy and the Al _2O_3 enriched surface oxide decreases the mechanical integrity of the surface oxide. The tensile and compressive stresses generated at the surface of the Al-bronze samples via frictional interaction with the opposing slider is sufficient to cause a large differential in strain across the oxide-metal interface and disruption of the brittle, Al_2O _3 enriched surface oxide. The exposed metal immediately repassivates itself by reforming a surface oxide or forming an adhesive bond with

  19. Large pore volume mesoporous aluminum oxide synthesized via nano-assembly

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    A new nano-assembly approach has been proposed for the preparation of macropore volume mesoporous aluminum oxide supports. Secondary nano-assembly and a frame structure mechanism for large pore volume mesoporous supports have been proposed. In a primary nano-assembly supersoluble micelle,aluminum hydroxide nanoparticles were precipitated in situ in surfactants with a volume balance (VB) less than 1,followed by secondary nano-assembly in linear and cylindrical shapes. The secondary nano-assembly of cylindrical aluminum hydroxides was calcined to form nano cylindrical aluminum oxides. For the formation of macropore volume mesoporous supports,we utilized a frame structure mechanism of mesoporous support,in which the exterior surface of the carrier may not be continuous. This macropore volume support has been used for the hydrotreatment of a residual oil catalyst,which possesses the following physical characteristics:pore volume 1.8―2.7 mL·g-1,specific surface area 180―429 m2·g-1,average pore diameter 17―57 nm,average pore diameter more than 10 nm (81%―94%),porosity 87%―93%,and crush strength 7.7―25 N·mm-1.

  20. Functional doped metal oxide films. Zinc oxide (ZnO) as transparent conducting oxide (TCO) titanium dioxide (TiO{sub 2}) as thermographic phosphor and protective coating

    Energy Technology Data Exchange (ETDEWEB)

    Nebatti Ech-Chergui, Abdelkader

    2011-07-29

    Metalorganic chemical vapor deposition (MOCVD) was used in the present work. Un-doped and Al-doped ZnO films were developed using two reactors: Halogen Lamp Reactor (HLR) (a type of Cold Wall Reactor) and Hot Wall Reactor (HWR), and a comparison was made between them in terms of the film properties. Zinc acetylacetonate was used as precursor for ZnO films while aluminum acetylacetonate was used for doping. The amount of Al doping can be controlled by varying the gas flow rate. Well ordered films with aluminum content between 0 and 8 % were grown on borosilicate glass and silicon. The films obtained are 0.3 to 0.5 {mu}m thick, highly transparent and reproducible. The growth rate of ZnO films deposited using HLR is less than HWR. In HLR, the ZnO films are well oriented along c-axis ((002) plane). ZnO films are commonly oriented along the c-axis due to its low surface free energy. On the other hand, the HWR films are polycrystalline and with Al doping these films aligned along the a-axis ((100) plane) which is less commonly observed. The best films were obtained with the HLR method showing a minimum electrical resistivity of 2.4 m{omega}cm and transmittance of about 80 % in the visible range. The results obtained for Al-doped films using HLR are promising to be used as TCOs. The second material investigated in this work was un-doped and doped titanium dioxide (TiO{sub 2}) films- its preparation and characterization. It is well known that thermographic phosphors can be used as an optical method for the surface temperature measurement. For this application, the temperature-dependent luminescence properties of europium (III)-doped TiO{sub 2} thin films were studied. It was observed that only europium doped anatase films show the phosphorescence. Rutile phase do not show phosphorescence. The films were prepared by the sol-gel method using the dip coating technique. The structures of the films were determined by X-ray diffraction (XRD). The excitation and the emission

  1. Modeling of oxidation of aluminum nanoparticles by using Cabrera Mott Model

    Science.gov (United States)

    Ramazanova, Zamart; Zyskin, Maxim; Martirosyan, Karen

    2012-10-01

    Our research focuses on modeling new Nanoenergetic Gas-Generator (NGG) formulations that rapidly release a large amount of gaseous products and generates shock and pressure waves. Nanoenergetic thermite reagents include mixtures of Al and metal oxides such as bismuth trioxide and iodine pentoxide. The research problem is considered a spherically symmetric case and used the Cabrera Mott oxidation model to describe the kinetics of oxide growth on spherical Al nanoparticles for evaluating reaction time which a process of the reaction with oxidizer happens on the outer part of oxide layer of aluminum ions are getting in contact with an oxidizing agent and react. We assumed that a ball of Al of radius 20 to 50 nm is covered by a thin oxide layer 2-4 nm and is surrounded by abundant amount of oxygen stored by oxidizers. The ball is rapidly heated up to ignition temperature to initiate self-sustaining oxidation reaction. As a result highly exothermic reaction is generated. In the oxide layer of excess concentrations of electrons and ions are dependent on the electric field potential with the corresponding of the Gibbs factors and that it conducts to the solution of a nonlinear Poisson equation for the electric field potential in a moving boundary domain. Motion of the boundary is determined by the gradient of a solution on the boundary. We investigated oxidation model numerically, using the COMSOL software utilizing finite element analysis. The computing results demonstrate that oxidation rate increases with the decreasing particle radius.

  2. Zinc release from atomic layer deposited zinc oxide thin films and its antibacterial effect on Escherichia coli

    Energy Technology Data Exchange (ETDEWEB)

    Kääriäinen, M.-L., E-mail: marja-leena.kaariainen@lut.fi [ASTRaL, Lappeenranta University of Technology, Sammonkatu 12, FI-50130 Mikkeli (Finland); Weiss, C.K.; Ritz, S.; Pütz, S. [Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz (Germany); Cameron, D.C. [ASTRaL, Lappeenranta University of Technology, Sammonkatu 12, FI-50130 Mikkeli (Finland); Mailänder, V. [Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz (Germany); III. Medical Clinic, University Medicine of the Johannes-Gutenberg University Mainz, Langenbeckstr. 1, D-55131 Mainz (Germany); Landfester, K. [Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz (Germany)

    2013-12-15

    Zinc oxide films have been grown by atomic layer deposition (ALD) at different reaction temperatures and in various thicknesses. Zinc-ion release has been examined from the ZnO films in water and in phosphate buffered saline solution (PBS). Additionally, the antibacterial effect has been studied on Escherichia coli. The thickness of the ZnO film or its crystal orientation did not affect the rate of dissolution. ALD grown aluminum oxide films were deposited on top of the ZnO films and they acted as an effective barrier against zinc dissolution. The bacteriostatic effect was not dependent on the film thickness but both 45 nm and 280 nm thick ZnO films significantly reduced bacterial attachment and growth in dark conditions by 99.7% and 99.5%, respectively. The results indicated that photoirradiation is not required for to enhance antibacterial properties of inorganic films and that the elution of zinc ions is probably responsible for the antibacterial properties of the ZnO films. The duration of the antibacterial effect of ZnO can be controlled by accurate control of the film thickness, which is a feature of ALD, and the onset of the antibacterial effect can be delayed by a time which can be adjusted by controlling the thickness of the Al{sub 2}O{sub 3} blocking layer. This gives the possibility of obtaining dual antibacterial release profiles through a nanolaminate structure of these two materials.

  3. Effects of Iron and Aluminum Oxides and Kaolinite on Adsorpion and Activities on Invertase

    Institute of Scientific and Technical Information of China (English)

    HUANGQIAOYUN; JIANGMINGHUA; 等

    1998-01-01

    Experiments were conducted to study the influences of synthetic bayerite,non-crystalline aluminum oxide(N-AlOH) ,geoethite,non-crystalline iron oxide (N-FeOH) and kaolinite on the adsorption,activity,kinetics and thermal stability of invertase.Adsorption of invertase on iron,aluminum oxides fitted Langmuir equation,The amount of invertase held on the minerals followed the sequence kaolinite>goethite>N-AlOH>bayerite>N-FeOH.No correlation was found between enzyme adsorption and the specific surface area of minerals exmined.The differences in the surface structure of minerals and the arrangement of enzymatic molecules on mineral surfaces led to the different capacities of minerals for enzyme adsorption. The adsorption of invertase on bayerite,N-AlOH,goethite ,H-FeOH and kaolinite was differently affected by pH.The order for the activity of invertase adsorbed on minerals was N-FeOH>N-AlOH>bayerite> goethite> kalinite.The inhibition effect of minerals on enzyme activity was kaolinite> crystalline oxides> non -crystalline oxides.The pH optimum of iron oxide-and aluminum oxide-invertase complexes was sililar to that of free enzyme(pH4.0),whereas the pH optimum of kaolinite-invertase complex was one pH unit highr than that of free enzyme.The affinity to substrate and the maximum reaction velocity as well as the thermal stability of combined inverthase were lower than those of the free enzyme.

  4. Standard test methods for chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade aluminum oxide and aluminum oxide-boron carbide composite pellets

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    1994-01-01

    1.1 These test methods cover procedures for the chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade aluminum oxide and aluminum oxide-boron carbide composite pellets to determine compliance with specifications. 1.2 The analytical procedures appear in the following order: Sections Boron by Titrimetry 7 to 13 Separation of Boron for Mass Spectrometry 14 to 19 Isotopic Composition by Mass Spectrometry 20 to 23 Separation of Halides by Pyrohydrolysis 24 to 27 Fluoride by Ion-Selective Electrode 28 to 30 Chloride, Bromide, and Iodide by Amperometric Microtitrimetry 31 to 33 Trace Elements by Emission Spectroscopy 34 to 46 1.3 The values stated in SI units are to be regarded as the standard. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. (F...

  5. Protective film formation on AA2024-T3 aluminum alloy by leaching of lithium carbonate from an organic coating

    NARCIS (Netherlands)

    Liu, Y.; Visser, P.; Zhou, X.; Lyon, S.B.; Hashimoto, T.; Curioni, M.; Gholinia, A.; Thompson, G.E.; Smyth, G.; Gibbon, S.R.; Graham, D.; Mol, J.M.C.; Terryn, H.A.

    2015-01-01

    An investigation into corrosion inhibition properties of a primer coating containing lithium carbonate as corrosion inhibitive pigment for AA2024 aluminum alloy was conducted. It was found that, during neutral salt spray exposure, a protective film of about 0.2 to 1.5 μm thickness formed within the

  6. Optical Properties of Au Nanoparticles Coated on Surface of Glass or Anodic Aluminum Oxide Template

    Institute of Scientific and Technical Information of China (English)

    FENG Jinyang; WU Can; MA Xiao; ZHANG Hongquan; ZHAO Xiujian

    2012-01-01

    Au nanoparticles coated on the surface of glass (Sample A) or on anodic aluminum oxide template surface (Sample B) were prepared using titanium dioxide sol-gel doped with chloroauric acid and with a reduction process.FE-SEM,UV-Vis spectrum and Fluorescence spectrum tests show that Au nanoparticles have been distributed randomly on the surface of glass,while deposition occurs on the surface of regular hollows for anodic aluminum oxide template.A sharp absorption peak appears at the wavelength of 536 nm for sample B,while there is a red shift,with a broader peak for sample A.A distinct fluorescence emission at the wavelength of 633 nm is detected for sample A,but no noticeable fluorescence emission has been found for Sample B.The results indicate that the microstructure and optical properties of Au nanoparticles can be modulated by different substrate.

  7. Interactions between nitric oxide and plant hormones in aluminum tolerance

    OpenAIRE

    He, Huyi; He, Longfei; Gu, Minghua

    2012-01-01

    Nitric oxide (NO) is involved, together with plant hormones, in the adaptation to Al stress in plants. However, the mechanism by which NO and plant hormones interplay to improve Al tolerance are still unclear. We have recently shown that patterns of plant hormones alteration differ between rye and wheat under Al stress. NO may enhance Al tolerance by regulating hormonal equilibrium in plants, as a regulator of plant hormones signaling. In this paper, some unsolved issues are discussed based o...

  8. Effect of conditions of thermal treatment on the porous structure of an aluminum oxide-containing nanofibrous aerogel

    Science.gov (United States)

    Markova, E. B.; Krasil'nikova, O. K.; Grankina, T. Yu.; Serov, Yu. M.

    2016-08-01

    The effect the conditions of thermal treatment have on a specific surface and the number of primary adsorption centers is studied. The relationship between changing adsorption characteristics and changes in the structure of nanofibrous aluminum oxide is considered.

  9. Substrate-dependent thermal conductivity of aluminum nitride thin-films processed at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Belkerk, B. E., E-mail: boubakeur.belkerk@gmail.com [Institut des Matériaux Jean Rouxel (IMN), University of Nantes, 2 rue de la Houssinière BP 32229, 44322 Nantes cedex 3 (France); Universités de Constantine, Laboratoire Microsystèmes et Instrumentation (LMI), Université Constantine 1, Faculté des Sciences de la Technologie, Route de Ain El Bey, Constantine 25017 (Algeria); Bensalem, S.; Soussou, A.; Carette, M.; Djouadi, M. A.; Scudeller, Y. [Institut des Matériaux Jean Rouxel (IMN), University of Nantes, 2 rue de la Houssinière BP 32229, 44322 Nantes cedex 3 (France); Al Brithen, H. [Department of Physics and Astronomy at College of Science, King Saud University at Riyadh (Saudi Arabia)

    2014-12-01

    In this paper, we report on investigation concerning the substrate-dependent thermal conductivity (k) of Aluminum Nitride (AlN) thin-films processed at low temperature by reactive magnetron sputtering. The thermal conductivity of AlN films grown at low temperature (<200 °C) on single-crystal silicon (Si) and amorphous silicon nitride (SiN) with thicknesses ranging from 100 nm to 4000 nm was measured with the transient hot-strip technique. The k values for AlN films on SiN were found significantly lower than those on Silicon consistently with their microstructures revealed by X-ray diffraction, high resolution scanning electron microscopy, and transmission electron microscopy. The change in k was due to the thermal boundary resistance found to be equal to 10 × 10{sup −9} Km{sup 2}W{sup −1} on SiN against 3.5 × 10{sup −9} Km{sup 2}W{sup −1} on Si. However, the intrinsic thermal conductivity was determined with a value as high as 200 Wm{sup −1}K{sup −1} whatever the substrate.

  10. Computer simulation of the photoluminescence of nanostructured aluminum oxide excited with pulsed synchrotron radiation

    OpenAIRE

    Kortov, V. S.; Spiridonova, T. V.; Zvonarev, S. V.

    2013-01-01

    An algorithm and a program are developed to calculate the photoluminescence (PL) parameters for bulk single-crystal and nanoscale dielectrics excited with pulsed synchrotron radiation. The luminescence spectra of F and F+centers and the PL decay kinetics in single-crystal and nanoscale aluminum-oxide samples containing oxygen anion vacancies are calculated for various nanoparticle sizes. It is shown that a noticeable broadening of the bands and a decrease in the afterglow time is observed for...

  11. Radial Combustion Propagation in Iron(III) Oxide/Aluminum Thermite Mixtures

    OpenAIRE

    Durães, Luísa; Campos, José; Portugal, António

    2006-01-01

    The self-sustained thermite reaction between iron oxide (Fe2O3) and aluminum is a classical source of energy. In this work the radial combustion propagation on thin circular samples of stoichiometric and over aluminized Fe2O3/Al thermite mixtures is studied. The radial geometry allows an easy detection of sample heterogeneities and the observation of the combustion behavior in their vicinity. The influence of factors like reactant mixtures stoichiometry, samples green density and system geome...

  12. Structure and properties of ceramic coatings formed on aluminum alloys by microarc oxidation

    Institute of Scientific and Technical Information of China (English)

    LIU Wan-hui; BAO Ai-lian; LIU Rong-xiang; WU Wan-liang

    2006-01-01

    The thick and hard ceramic coatings were deposited on 2024 Al alloy by microarc oxidation in the electrolytic solution.Microstructure, phase composition and wear resistance of the oxide coatings were investigated by SEM, XRD and friction and wear tester. The microhardness and thickness of the oxide coatings were measured. The results show that the ceramic coating is mainly composed of α-Al2O3 and γ-Al2O3. During oxidation, the temperature in the microarc discharge channel is very high to make the local coating molten. From the surface to interior of the coating, microhardness increases gradually. The microhardness of the ceramic coating is HV1 800, and the microarc oxidation coatings greatly improve the antiwear properties of aluminum alloys.

  13. DUPLEX Al2O3/DLC COATING ON 15SiCp/2024 ALUMINUM MATRIX COMPOSITE USING COMBINED MICROARC OXIDATION AND FILTERED CATHODIC VACUUM ARC DEPOSITION

    OpenAIRE

    WENBIN XUE; HUA TIAN; JIANCHENG DU; MING HUA; XU ZHANG; YONGLIANG LI

    2012-01-01

    Microarc oxidation (MAO) treatment produces a thick Al2O3 coating on the 15SiCp/2024 aluminum matrix composite. After pretreatment of Ti ion implantation, a thin diamond-like carbon film (DLC) was deposited on the top of polished Al2O3 coating by a pulsed filtered cathodic vacuum arc (FCVA) deposition system with a metal vapor vacuum arc (MEVVA) source. The morphology and tribological properties of the duplex Al2O3/DLC multiplayer coating were investigated by Raman spectroscopy, scanning elec...

  14. Surface scanning inspection system particle detection dependence on aluminum film morphology

    Science.gov (United States)

    Prater, Walter; Tran, Natalie; McGarvey, Steve

    2012-03-01

    Physical vapor deposition (PVD) aluminum films present unique challenges when detecting particulate defects with a Surface Scanning Inspection System (SSIS). Aluminum (Al) films 4500Å thick were deposited on 300mm particle grade bare Si wafers at two temperatures using a Novellus Systems INOVA® NExT,.. Film surface roughness and morphology measurements were performed using a Veeco Vx310® atomic force microscope (AFM). AFM characterization found the high deposition temperature (TD) Al roughness (Root Mean Square 16.5 nm) to be five-times rougher than the low-TD Al roughness (rms 3.7 nm). High-TD Al had grooves at the grain boundaries that were measured to be 20 to 80 nm deep. Scanning electron microscopy (SEM) examination, with a Hitachi RS6000 defect review SEM, confirmed the presence of pronounced grain grooves. SEM images established that the low-TD filmed wafers have fine grains (0.1 to 0.3 um diameter) and the high-TD film wafers have fifty-times larger equiaxed plateletshape grains (5 to 15 um diameter). Calibrated Poly-Styrene Latex (PSL) spheres ranging in size from 90 nm to 1 μm were deposited in circular patterns on the wafers using an aerosol deposition chamber. PSL sphere depositions at each spot were controlled to yield 2000 to 5000 counts. A Hitachi LS9100® dark field full wafer SSIS was used to experimentally determine the relationship of the PSL sphere scattered light intensity with S-polarized light, a measure of scattering cross-section, with respect to the calibrated PSL sphere diameter. Comparison of the SSIS scattered light versus PSL spot size calibration curves shows two distinct differences. Scattering cross-section (intensity) of the PSL spheres increased on the low-TD Al film with smooth surface roughness and the low-TD Al film defect detection sensitivity was 126 nm compared to 200 nm for the rougher high- TD Al film. This can be explained by the higher signal to noise attributed to the smooth low-TD Al. Dark field defect detection on

  15. Fabrication of CoPd alloy nanowire arrays on an anodic aluminum oxide/Ti/Si substrate and their enhanced magnetic properties

    International Nuclear Information System (INIS)

    An anodic aluminum oxide/Ti/Si substrate was successfully synthesized by the anodization of an aluminum film on a Ti/Si substrate and then used as a template to grow 10 nm diameter CoPd alloy nanowires. X-ray diffraction and energy-dispersed X-ray patterns indicated that Co0.97Pd0.03 nanowire arrays with a preferential orientation of (0 0 2) were formed during electrodeposition. High coercivity (about 1700 Oe) and squareness (about 0.85) were obtained in the samples when the magnetic field was applied parallel to the axis of the nanowires; these values are much larger than those of pure Co nanowire arrays with the same diameters

  16. Fabrication of a Zinc Aluminum Oxide Nanowire Array Photoelectrode for a Solar Cell Using a High Vacuum Die Casting Technique

    Directory of Open Access Journals (Sweden)

    Chin-Guo Kuo

    2014-01-01

    Full Text Available Zinc aluminum alloy nanowire was fabricated by the vacuum die casting. Zinc aluminum alloy was melted, injected into nanomold under a hydraulic pressure, and solidified as nanowire shape. Nanomold was prepared by etching aluminum sheet with a purity of 99.7 wt.% in oxalic acid solution. A nanochannel within nanomold had a pore diameter of 80 nm and a thickness of 40 μm. Microstructure and characteristic analysis of the alumina nanomold and zinc-aluminum nanowire were performed by scanning electron microscope, X-ray diffraction analysis, and energy dispersive X-ray spectroscopy. Zinc aluminum oxide nanowire array was produced using the thermal oxidation method and designed for the photoelectrode application.

  17. Anodic Aluminum Oxide Templates for Nano wires Array Fabrication

    International Nuclear Information System (INIS)

    This paper reports on the process developed to fabricate anodic aluminium oxide (AAO) templates suitable for the fabrication of nano wire arrays. Anodization process has been used to fabricate the AAO templates with pore diameters ranging from 15 nm to 30 nm. Electrodeposition of parallel arrays of high aspect ratio nickel nano wires were demonstrated using these fabricated AAO templates. The nano wires produced were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). It was found that the orientations of the electrodeposited nickel nano wires were governed by the deposition current and electrolyte conditions. (author)

  18. Rapid Deposition of Titanium Oxide and Zinc Oxide Films by Solution Precursor Plasma Spray

    Science.gov (United States)

    Ando, Yasutaka

    In order to develop a high rate atmospheric film deposition process for functional films, as a basic study, deposition of titanium oxide film and zinc oxide film by solution precursor plasma spray (SPPS) was conducted in open air. Consequently, in the case of titanium oxide film deposition, anantase film and amorphous film as well as rutile film could be deposited by varying the deposition distance. In the case of anatase dominant film, photo-catalytic properties of the films could be confirmed by wettability test. In addition, the dye sensitized sollar cell (DSC) using the TiO2 film deposited by this SPPS technique as photo voltaic device generates 49mV in OCV. On the other hand, in the case of zinc oxide film deposition, it was proved that well crystallized ZnO films with photo catalytic properties could be deposited. From these results, this process was found to have high potential for high rate functional film deposition process conducted in the air.

  19. Rapid air film continuous casting of aluminum alloy using static magnetic field

    Institute of Scientific and Technical Information of China (English)

    Fu QU; Huixue JIANG; Gaosong WANG; Qingfeng ZHU; Xiangjie WANG; Jianzhong CUI

    2009-01-01

    The influences of the cooling style and static magnetic field on the air film casting process were investigated. Ingots of 6063 aluminum alloy were produced by AIRSOL VEIL casting with double-layer cooling water and static magnetic field. Surface segregation, hot crack and variation of solute content along the radius direction of ingot were examined. The results showed that double-layer cooling water can improve the surface quality and avoid of hot crack, which created conditions to increase the casting speed. The electromagnetic casting process can effectively improve the surface quality in high speed casting process, and static magnetic field has a great influence on solute distribution along the radius direction of ingot.

  20. Effect of aluminum oxide on the compressive strength of pellets

    Institute of Scientific and Technical Information of China (English)

    Jian-liang Zhang; Zhen-yang Wang; Xiang-dong Xing; Zheng-jian Liu

    2014-01-01

    Analytical-reagent-grade Al2O3 was added to magnetite ore during the process of pelletizing, and the methods of mercury intru-sion, scanning electron microscopy, and image processing were used to investigate the effect of Al2O3 on the compressive strength of the pellets. The results showed that, as the Al2O3 content increased, the compressive strength of the pellets increased slightly and then decreased gradually. When a small amount of Al2O3 was added to the pellets, the Al2O3 combined with fayalite (2FeO·SiO2) and the aluminosilicate (2FeO·2Al2O3·5SiO2) was generated, which releases some iron oxide and reduces the inhibition of fayalite to the solid phase of consolidation. When Al2O3 increased sequentially, high melting point of Al2O3 particles hinder the oxidation of Fe3O4 and the recrystallization of Fe2O3, making the internal porosity of the pellets increase, which leads to the decrease in compressive strength of the pellets.

  1. Systematic review of potential health risks posed by pharmaceutical, occupational and consumer exposures to metallic and nanoscale aluminum, aluminum oxides, aluminum hydroxide and its soluble salts

    Science.gov (United States)

    Willhite, Calvin C.; Karyakina, Nataliya A.; Yokel, Robert A.; Yenugadhati, Nagarajkumar; Wisniewski, Thomas M.; Arnold, Ian M. F.; Momoli, Franco; Krewski, Daniel

    2016-01-01

    Aluminum (Al) is a ubiquitous substance encountered both naturally (as the third most abundant element) and intentionally (used in water, foods, pharmaceuticals, and vaccines); it is also present in ambient and occupational airborne particulates. Existing data underscore the importance of Al physical and chemical forms in relation to its uptake, accumulation, and systemic bioavailability. The present review represents a systematic examination of the peer-reviewed literature on the adverse health effects of Al materials published since a previous critical evaluation compiled by Krewski et al. (2007). Challenges encountered in carrying out the present review reflected the experimental use of different physical and chemical Al forms, different routes of administration, and different target organs in relation to the magnitude, frequency, and duration of exposure. Wide variations in diet can result in Al intakes that are often higher than the World Health Organization provisional tolerable weekly intake (PTWI), which is based on studies with Al citrate. Comparing daily dietary Al exposures on the basis of “total Al” assumes that gastrointestinal bioavailability for all dietary Al forms is equivalent to that for Al citrate, an approach that requires validation. Current occupational exposure limits (OELs) for identical Al substances vary as much as 15-fold. The toxicity of different Al forms depends in large measure on their physical behavior and relative solubility in water. The toxicity of soluble Al forms depends upon the delivered dose of Al+3 to target tissues. Trivalent Al reacts with water to produce bidentate superoxide coordination spheres [Al(O2)(H2O4)+2 and Al(H2O)6+3] that after complexation with O2•−, generate Al superoxides [Al(O2•)](H2O5)]+2. Semireduced AlO2• radicals deplete mitochondrial Fe and promote generation of H2O2, O2•− and OH•. Thus, it is the Al+3-induced formation of oxygen radicals that accounts for the oxidative damage that

  2. Systematic review of potential health risks posed by pharmaceutical, occupational and consumer exposures to metallic and nanoscale aluminum, aluminum oxides, aluminum hydroxide and its soluble salts.

    Science.gov (United States)

    Willhite, Calvin C; Karyakina, Nataliya A; Yokel, Robert A; Yenugadhati, Nagarajkumar; Wisniewski, Thomas M; Arnold, Ian M F; Momoli, Franco; Krewski, Daniel

    2014-10-01

    oxidative damage that leads to intrinsic apoptosis. In contrast, the toxicity of the insoluble Al oxides depends primarily on their behavior as particulates. Aluminum has been held responsible for human morbidity and mortality, but there is no consistent and convincing evidence to associate the Al found in food and drinking water at the doses and chemical forms presently consumed by people living in North America and Western Europe with increased risk for Alzheimer's disease (AD). Neither is there clear evidence to show use of Al-containing underarm antiperspirants or cosmetics increases the risk of AD or breast cancer. Metallic Al, its oxides, and common Al salts have not been shown to be either genotoxic or carcinogenic. Aluminum exposures during neonatal and pediatric parenteral nutrition (PN) can impair bone mineralization and delay neurological development. Adverse effects to vaccines with Al adjuvants have occurred; however, recent controlled trials found that the immunologic response to certain vaccines with Al adjuvants was no greater, and in some cases less than, that after identical vaccination without Al adjuvants. The scientific literature on the adverse health effects of Al is extensive. Health risk assessments for Al must take into account individual co-factors (e.g., age, renal function, diet, gastric pH). Conclusions from the current review point to the need for refinement of the PTWI, reduction of Al contamination in PN solutions, justification for routine addition of Al to vaccines, and harmonization of OELs for Al substances.

  3. Sorption of phenanthrene by dissolved organic matter and its complex with aluminum oxide nanoparticles

    International Nuclear Information System (INIS)

    Intent of this study was to explore the potential application of polymerin, the polymeric, dissolved organic matter fraction from olive oil wastewaters, in technologies aimed at remediating hydrophobic organic compounds (HOCs) point-source pollution. Phenanthrene binding with polymerin was investigated. Moreover, the effect of addition of micro and nanoscale aluminum oxides (Al2O3) was studied, as well as sorption of polymerin on the oxides. Phenanthrene binding capacity by polymerin was notably higher than the sorption capacities for both types of Al2O3 particles. Polymerin sorption on nanoparticles was nearly 100 times higher than microparticles. In a three-phase system, using microparticles, higher phenanthrene sorption was found by adding into water polymerin, oxides and phenanthrene simultaneously. In contrast, using nanoparticles, a considerable enhancement of phenanthrene sorption was shown by adding phenanthrene to a pre-formed and dried polymerin-oxide complex. These findings support the application of polymerin, especially associated with Al2O3 nanoparticles, in remediation of water contaminated with HOCs. This work highlights the significant role of nanoparticles. - Size of aluminum oxides significantly affects sorption of polymerin and phenanthrene

  4. Novel texturing method for sputtered zinc oxide films prepared at high deposition rate from ceramic tube targets

    Directory of Open Access Journals (Sweden)

    Hüpkes J.

    2011-10-01

    Full Text Available Sputtered and wet-chemically texture etched zinc oxide (ZnO films on glass substrates are regularly applied as transparent front contact in silicon based thin film solar cells. In this study, chemical wet etching in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl on aluminum doped zinc oxide (ZnO:Al films deposited by magnetron sputtering from ceramic tube targets at high discharge power (~10 kW/m target length is investigated. Films with thickness of around 800 nm were etched in diluted HCl acid and HF acid to achieve rough surface textures. It is found that the etching of the films in both etchants leads to different surface textures. A two steps etching process, which is especially favorable for films prepared at high deposition rate, was systematically studied. By etching first in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl these films are furnished with a surface texture which is characterized by craters with typical diameter of around 500 − 1000 nm. The resulting surface structure is comparable to etched films sputtered at low deposition rate, which had been demonstrated to be able to achieve high efficiencies in silicon thin film solar cells.

  5. Electrochromic study on amorphous tungsten oxide films by sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chuan, E-mail: cli10@yahoo.com [Department of Biomedical Engineering, National Yang Ming University, Taipei 11221, Taiwan (China); Department of Mechanical Engineering, National Central University, Jhongli, Taoyuan 32001, Taiwan (China); Hsieh, J.H. [Department of Materials Engineering, Ming Chi University of Technology, Taishan, Taipei 24301, Taiwan (China); Hung, Ming-Tsung [Department of Mechanical Engineering, National Central University, Jhongli, Taoyuan 32001, Taiwan (China); Huang, B.Q. [Department of Biomedical Engineering, National Yang Ming University, Taipei 11221, Taiwan (China)

    2015-07-31

    Tungsten oxide films under different oxygen flow rates are deposited by DC sputtering. The voltage change at target and analyses for the deposited films by X-ray diffraction, scanning electronic microscope, X-ray photoelectron spectroscopy and ultraviolet–visible-near infrared spectroscopy consistently indicate that low oxygen flow rate (5 sccm) only creates metal-rich tungsten oxide films, while higher oxygen flow rate (10–20 sccm) assures the deposition of amorphous WO{sub 3} films. To explore the electrochromic function of deposited WO{sub 3} films, we use electrochemical tests to perform the insertion of lithium ions and electrons into films. The WO{sub 3} films switch between color and bleach states effectively by both potentiostat and cyclic voltammetry. Quantitative evaluation on electrochemical tests indicates that WO{sub 3} film with composition close to its stoichiometry is an optimal choice for electrochromic function. - Highlights: • Amorphous WO{sub 3} films are deposited by DC sputtering under different O{sub 2} flow rates. • Higher oxygen flow rate (> 10 sccm) assures the deposition of amorphous WO{sub 3} films. • Both potentiostat and cyclic voltammetry make WO{sub 3} films switch its color. • An optimal electrochromic WO{sub 3} is to make films close to its stoichiometry.

  6. Electrochromic study on amorphous tungsten oxide films by sputtering

    International Nuclear Information System (INIS)

    Tungsten oxide films under different oxygen flow rates are deposited by DC sputtering. The voltage change at target and analyses for the deposited films by X-ray diffraction, scanning electronic microscope, X-ray photoelectron spectroscopy and ultraviolet–visible-near infrared spectroscopy consistently indicate that low oxygen flow rate (5 sccm) only creates metal-rich tungsten oxide films, while higher oxygen flow rate (10–20 sccm) assures the deposition of amorphous WO3 films. To explore the electrochromic function of deposited WO3 films, we use electrochemical tests to perform the insertion of lithium ions and electrons into films. The WO3 films switch between color and bleach states effectively by both potentiostat and cyclic voltammetry. Quantitative evaluation on electrochemical tests indicates that WO3 film with composition close to its stoichiometry is an optimal choice for electrochromic function. - Highlights: • Amorphous WO3 films are deposited by DC sputtering under different O2 flow rates. • Higher oxygen flow rate (> 10 sccm) assures the deposition of amorphous WO3 films. • Both potentiostat and cyclic voltammetry make WO3 films switch its color. • An optimal electrochromic WO3 is to make films close to its stoichiometry

  7. Highly selective single-use fluoride ion optical sensor based on aluminum(III)-salen complex in thin polymeric film

    Energy Technology Data Exchange (ETDEWEB)

    Badr, Ibrahim H.A. [University of Michigan, Department of Chemistry, 930 N. University, Ann Arbor, MI 48105-1055 (United States); Meyerhoff, Mark E. [University of Michigan, Department of Chemistry, 930 N. University, Ann Arbor, MI 48105-1055 (United States)]. E-mail: mmeyerho@umich.edu

    2005-11-30

    A highly selective optical sensor for fluoride ion based on the use of an aluminum(III)-salen complex as an ionophore within a thin polymeric film is described. The sensor is prepared by embedding the aluminum(III)-salen ionophore and a suitable lipophilic pH-sensitive indicator (ETH-7075) in a plasticized poly(vinyl chloride) (PVC) film. Optical response to fluoride occurs due to fluoride extraction into the polymer via formation of a strong complex with the aluminum(III)-salen species. Co-extraction of protons occurs simultaneously, with protonation of the indicator dye yielding the optical response at 529 nm. Films prepared using dioctylsebacate (DOS) are shown to exhibit better response (e.g., linear range, detection limit, and optical signal stability) compared to those prepared using ortho-nitrophenyloctyl ether (o-NPOE). Films formulated with aluminum(III)-salen and ETH-7075 indicator in 2 DOS:1 PVC, exhibit a significantly enhanced selectivity for fluoride over a wide range of lipophilic anions including salicylate, perchlorate, nitrate, and thiocyanate. The optimized films exhibit a sub-micromolar detection limit, using glycine-phosphate buffer, pH 3.00, as the test sample. The response times of the fluoride optical sensing films are in the range of 1-10 min depending on the fluoride ion concentration in the sample. The sensor exhibits very poor reversibility owing to a high co-extraction constant (log K = 8.5 {+-} 0.4), indicating that it can best be employed as a single-use transduction device. The utility of the aluminum(III)-salen based fluoride sensitive films as single-use sensors is demonstrated by casting polymeric films on the bottom of standard polypropylene microtiter plate wells (96 wells/plate). The modified microtiter plate optode format sensors exhibit response characteristics comparable to the classical optode films cast on quartz slides. The modified microtiter is utilized for the analysis of fluoride in diluted anti-cavity fluoride rinse

  8. Application of diffusion barriers to the refractory fibers of tungsten, columbium, carbon and aluminum oxide

    Science.gov (United States)

    Douglas, F. C.; Paradis, E. L.; Veltri, R. D.

    1973-01-01

    A radio frequency powered ion-plating system was used to plate protective layers of refractory oxides and carbide onto high strength fiber substrates. Subsequent overplating of these combinations with nickel and titanium was made to determine the effectiveness of such barrier layers in preventing diffusion of the overcoat metal into the fibers with consequent loss of fiber strength. Four substrates, five coatings, and two metal matrix materials were employed for a total of forty material combinations. The substrates were tungsten, niobium, NASA-Hough carbon, and Tyco sapphire. The diffusion-barrier coatings were aluminum oxide, yttrium oxide, titanium carbide, tungsten carbide with 14% cobalt addition, and zirconium carbide. The metal matrix materials were IN 600 nickel and Ti 6/4 titanium. Adhesion of the coatings to all substrates was good except for the NASA-Hough carbon, where flaking off of the oxide coatings in particular was observed.

  9. The influence of titanium and iron oxides on the coloring and friability of the blue fired aluminum oxide as an abrasive material

    OpenAIRE

    E. R. Passos; J. A. Rodrigues

    2016-01-01

    Abstract The quality of abrasive grains is crucial to increase the lifespan of roughing, polishing and cutting tools. The purpose of the work herein was to evaluate the variables of the blue fired aluminum oxide heat treatment process. This heat treatment process improves the physical properties of the brown fused aluminum oxide and results in a blue coloring, which uniquely identifies it within the abrasives industry. The work herein includes information beginning with the electro-fusion pro...

  10. Low temperature solid oxide fuel cells with proton-conducting Y:BaZrO3 electrolyte on porous anodic aluminum oxide substrate

    International Nuclear Information System (INIS)

    This paper presents the architecture of a nano thin-film yttrium-doped barium zirconate (BYZ) solid-oxide fuel cell that uses nanoporous anodic aluminum oxide (AAO) as a supporting and gas-permeable substrate. The anode was fabricated by sputtering 300 nm platinum thin film that partially covered the AAO surface pores, followed by an additional conformal platinum coating to tune the pore size by atomic layer deposition. Two different nano-porous anode structures with a pore size of 10 nm or 50 nm were deposited. Proton-conducting BYZ ceramic electrolyte with increasing thicknesses of 300, 600, and 900 nm was deposited on top of the platinum anode by pulsed laser deposition, followed by a 200 nm layer of porous Pt sputtered on BYZ electrolyte as a cathode. The open circuit voltage (OCV) of the fuel cells was characterized at 250 °C with 1:1 volumetric stoichiometry of a methanol/water vapor mixture as the fuel. The OCVs were 0.17 V with a 900 nm-thick BYZ electrolyte on 50 nm pores and 0.3 V with a 600 nm-thick BYZ electrolyte on 10 nm pores, respectively, but it increased to 0.8 V for a 900 nm-thick BYZ electrolyte on 10 nm pores, indicating that increasing the film thickness and decreasing a surface pore size help to reduce the number of electrolyte pinholes and the gas leakage through the electrolyte. A maximum power density of 5.6 mW/cm2 at 250 °C was obtained from the fuel cell with 900 nm of BYZ electrolyte using methanol vapor as a fuel. - Highlights: • A low temperature ceramic fuel cell on nano-porous substrate was demonstrated. • A thin-film yttrium doped barium zirconate (BYZ) was deposited as an electrolyte. • An open circuit voltage (OCV) was measured to verify the BYZ film quality. • An OCV increased by increasing BYZ film thickness and decreasing pore size of anode. • The current–voltage performance was measured using vaporized methanol fuel at 250 °C

  11. Low temperature solid oxide fuel cells with proton-conducting Y:BaZrO{sub 3} electrolyte on porous anodic aluminum oxide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Ha, Seungbum [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); School of Mechanical and Aerospace Engineering, Seoul National University, Daehak-dong, Gwanak-gu, Seoul 151–742 (Korea, Republic of); Su, Pei-Chen [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Ji, Sanghoon [Graduate School of Convergence Science and Technology, Seoul National University, Daehak-dong, Gwanak-gu, Seoul 151–742 (Korea, Republic of); Cha, Suk Won, E-mail: swcha@snu.ac.kr [School of Mechanical and Aerospace Engineering, Seoul National University, Daehak-dong, Gwanak-gu, Seoul 151–742 (Korea, Republic of)

    2013-10-01

    This paper presents the architecture of a nano thin-film yttrium-doped barium zirconate (BYZ) solid-oxide fuel cell that uses nanoporous anodic aluminum oxide (AAO) as a supporting and gas-permeable substrate. The anode was fabricated by sputtering 300 nm platinum thin film that partially covered the AAO surface pores, followed by an additional conformal platinum coating to tune the pore size by atomic layer deposition. Two different nano-porous anode structures with a pore size of 10 nm or 50 nm were deposited. Proton-conducting BYZ ceramic electrolyte with increasing thicknesses of 300, 600, and 900 nm was deposited on top of the platinum anode by pulsed laser deposition, followed by a 200 nm layer of porous Pt sputtered on BYZ electrolyte as a cathode. The open circuit voltage (OCV) of the fuel cells was characterized at 250 °C with 1:1 volumetric stoichiometry of a methanol/water vapor mixture as the fuel. The OCVs were 0.17 V with a 900 nm-thick BYZ electrolyte on 50 nm pores and 0.3 V with a 600 nm-thick BYZ electrolyte on 10 nm pores, respectively, but it increased to 0.8 V for a 900 nm-thick BYZ electrolyte on 10 nm pores, indicating that increasing the film thickness and decreasing a surface pore size help to reduce the number of electrolyte pinholes and the gas leakage through the electrolyte. A maximum power density of 5.6 mW/cm{sup 2} at 250 °C was obtained from the fuel cell with 900 nm of BYZ electrolyte using methanol vapor as a fuel. - Highlights: • A low temperature ceramic fuel cell on nano-porous substrate was demonstrated. • A thin-film yttrium doped barium zirconate (BYZ) was deposited as an electrolyte. • An open circuit voltage (OCV) was measured to verify the BYZ film quality. • An OCV increased by increasing BYZ film thickness and decreasing pore size of anode. • The current–voltage performance was measured using vaporized methanol fuel at 250 °C.

  12. Characterization and stability of thin oxide films on plutonium surfaces

    Science.gov (United States)

    Flores, H. G. García; Roussel, P.; Moore, D. P.; Pugmire, D. L.

    2011-02-01

    X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were employed to study oxide films on plutonium metal surfaces. Measurements of the relative concentrations of oxygen and plutonium, as well as the resulting oxidation states of the plutonium (Pu) species in the near-surface region are presented. The oxide product of the auto-reduction (AR) of plutonium dioxide films is evaluated and found to be an oxide species which is reduced further than what is expected. The results of this study show a much greater than anticipated extent of auto-reduction and challenge the commonly held notion of the stoichiometric stability of Pu 2O 3 thin-films. The data indicates that a sub-stoichiometric plutonium oxide (Pu 2O 3 - y ) exists at the metal-oxide interface. The level of sub-stoichiometry is shown to depend, in part, on the carbidic contamination of the metal surface.

  13. Electrochromic properties of nano-composite nickel oxide film

    Energy Technology Data Exchange (ETDEWEB)

    Lin, S.-H. [Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan (China)], E-mail: d927117@oz.nthu.edu.tw; Chen, F.-R. [Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan (China); National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan (China); Kai, J.-J. [Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan (China)

    2008-03-30

    In this study, we develop a nano-composite nickel oxide (NNO) film on the indium tin oxide (ITO)-coated glass substrate for electrochromic applications. The NNO film is composed of the core-shell structure of NiO/conducting ITO nano-particles. High porosity in the NNO film offers large active surface area for redox reaction. Electrochromic electrodes fabricated with the NNO films produce high transmittance variation (66.2% at a wavelength of 550 nm), fast switching speed (coloring: 3.5 s; bleaching: 4 s) and good durability, which are much better than those of ones made with the traditional nickel oxide films. The structure, morphology, and electrochromic properties are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS) and UV-vis spectroscopy.

  14. Electrochromic properties of nano-composite nickel oxide film

    International Nuclear Information System (INIS)

    In this study, we develop a nano-composite nickel oxide (NNO) film on the indium tin oxide (ITO)-coated glass substrate for electrochromic applications. The NNO film is composed of the core-shell structure of NiO/conducting ITO nano-particles. High porosity in the NNO film offers large active surface area for redox reaction. Electrochromic electrodes fabricated with the NNO films produce high transmittance variation (66.2% at a wavelength of 550 nm), fast switching speed (coloring: 3.5 s; bleaching: 4 s) and good durability, which are much better than those of ones made with the traditional nickel oxide films. The structure, morphology, and electrochromic properties are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS) and UV-vis spectroscopy

  15. Nanocomposite oxide thin films grown by pulsed energy beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Nistor, M., E-mail: mnistor@infim.ro [National Institute for Lasers, Plasma and Radiation Physics, L22, P.O. Box MG-36, 77125 Bucharest-Magurele (Romania); Petitmangin, A.; Hebert, C. [INSP, Universite Pierre et Marie Curie - Paris 6, Campus Boucicaut, 140 rue de Lourmel, 75015 Paris (France); Seiler, W. [LIM, ENSAM, 151 boulevard de l' Hopital, 75013 Paris (France)

    2011-04-01

    Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

  16. Low reflectance sputtered vanadium oxide thin films on silicon

    Science.gov (United States)

    Esther, A. Carmel Mary; Dey, Arjun; Rangappa, Dinesh; Sharma, Anand Kumar

    2016-07-01

    Vanadium oxide thin films on silicon (Si) substrate are grown by pulsed radio frequency (RF) magnetron sputtering technique at RF power in the range of 100-700 W at room temperature. Deposited thin films are characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) techniques to investigate microstructural, phase, electronic structure and oxide state characteristics. The reflectance and transmittance spectra of the films and the Si substrate are recorded at the solar region (200-2300 nm) of the spectral window. Substantial reduction in reflectance and increase in transmittance is observed for the films grown beyond 200 W. Further, optical constants viz. absorption coefficient, refractive index and extinction coefficient of the deposited vanadium oxide films are evaluated.

  17. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  18. Synthesis and structure analysis of aluminum doped zinc oxide powders

    Institute of Scientific and Technical Information of China (English)

    NIE DengPan; XUE Tao; ZHANG Yu; LI XiangJun

    2008-01-01

    Hexagonal Al-doped zinc oxide (ZnO) powders with a nominal composition of Zn1-xAlxO (0≤x≤0.028) were synthesized by the co-precipitation method. The contents of the Al element in the samples were measured by the inductively coupled plasma-optical emission spectroscopy (ICP-OES) technique. The structures of the Zn1-xAlxO (0≤x≤0.028) compounds calcined at 1000 and 1200℃ have been deter-mined using the Rietveld full-profile analysis method. Rietveld refinements of the diffraction data indi-cated that the addition of Al initially has a considerably positive effect on the decreasing of the lattice parameters a and c of Zn1-xAlxO, but the effect becomes very slight and even negative with the further increase of the Al content. The solid solubility limit of Al in ZnO (mole fraction y) is 2.21%, resulting in Zn0.978Al0.22O. It seems that when the Al content is excessive, Al prefers to form a ZnAl2O4 compound with ZnO, but not to incorporate into the ZnO lattice to occupy the Zn2+ cites. Two phases, [ZnO] (or Al-doped ZnO) and [ZnAl2O4], are obviously segregated in Zn1-xAlxO while the value of x is larger than 0.024. The UV-Vis absorption spectra show that the Al-doped ZnO exhibits a red-shift in the absorption edge without reduced transmission compared with pure ZnO, which also confirms that Al ions enter the ZnO lattice and form a Zn1-xAlxO solid solution.

  19. Synthesis and structure analysis of aluminum doped zinc oxide powders

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Hexagonal Al-doped zinc oxide (ZnO) powders with a nominal composition of Zn1-xAlxO (0≤x≤0.028) were synthesized by the co-precipitation method. The contents of the Al element in the samples were measured by the inductively coupled plasma-optical emission spectroscopy (ICP-OES) technique. The structures of the Zn1-xAlxO (0≤x≤0.028) compounds calcined at 1000 and 1200℃ have been deter- mined using the Rietveld full-profile analysis method. Rietveld refinements of the diffraction data indi- cated that the addition of Al initially has a considerably positive effect on the decreasing of the lattice parameters a and c of Zn1-xAlxO, but the effect becomes very slight and even negative with the further increase of the Al content. The solid solubility limit of Al in ZnO (mole fraction y) is 2.2l%, resulting in Zn0.978Al0.22O. It seems that when the Al content is excessive, Al prefers to form a ZnAl2O4 compound with ZnO, but not to incorporate into the ZnO lattice to occupy the Zn2+ cites. Two phases, [ZnO] (or Al-doped ZnO) and [ZnAl2O4], are obviously segregated in Zn1-xAlxO while the value of x is larger than 0.024. The UV-Vis absorption spectra show that the Al-doped ZnO exhibits a red-shift in the absorption edge without reduced transmission compared with pure ZnO, which also confirms that Al ions enter the ZnO lattice and form a Zn1-xAlxO solid solution.

  20. The influence of titanium and iron oxides on the coloring and friability of the blue fired aluminum oxide as an abrasive material

    Directory of Open Access Journals (Sweden)

    E. R. Passos

    2016-03-01

    Full Text Available Abstract The quality of abrasive grains is crucial to increase the lifespan of roughing, polishing and cutting tools. The purpose of the work herein was to evaluate the variables of the blue fired aluminum oxide heat treatment process. This heat treatment process improves the physical properties of the brown fused aluminum oxide and results in a blue coloring, which uniquely identifies it within the abrasives industry. The work herein includes information beginning with the electro-fusion process of bauxite (the manufacturing of the brown fused aluminum oxide to the Blue Fired process. It also compares the fracture resistance index between these materials. This index is the inverse of the friability. Besides the content of titanium and iron oxides, process variables such as time, temperature and atmospheric conditions are important to monitor in order to reach standard requirements. Experimental evidence measuring these parameters is presented in the article herein. The blue coloring of this aluminum oxide is explained by the optical phenomena of electron transition, and not by the formation of aluminum titanate, as some technical literature has stated. Furthermore, it was proved that the coloring of blue fired material should not be used exclusively as an indicator of the optimal abrasive characteristics of this class of aluminum oxide.

  1. An experimental investigation of angular resolved energy distributions of atoms sputtered from evaporated aluminum films

    International Nuclear Information System (INIS)

    A study of angular resolved velocity (energy) distributions of atoms sputtered from in situ prepared metal films is described in this contribution. The velocity resolution of the set-up is based on the pulsed laser-induced fluorescence technique, i.e., scanning the narrow bandwidth dye laser radiation over the Doppler broadened absorption profile of the sputtered particles. The arrangement of the vacuum vessel and fluorescence detection optics provides the means for an independent selection of the observed emission direction and the angle of incidence. A pulsed ion gun is applied to bombard the target with noble gas ions in the energy range between 200 and 500 eV. The target assembly allows the preparation of thin metal films by evaporation on optically polished glass substrates without break of the vacuum. We report on measurements obtained with this arrangement, i.e., the determination of energy distributions of sputtered aluminum atoms. The bombardment at both the normal and the oblique incidence of the ion beam are contained in the investigation. Pronounced anisotropic effects are observed in both cases. In the case of oblique bombardment the shape of the distributions reflects cascade effects as well as single collision properties. The energy distribution is approximated with the aid of an energy spectrum involving a superposition of exponential functions. The experimental results are compared with simulations obtained by the Monte Carlo code TRIM.SP

  2. NANO-TRIBOLOGICAL STUDY ON A SUPER-HYDROPHOBIC FILM FORMED ON ROUGH ALUMINUM SUBSTRATES

    Institute of Scientific and Technical Information of China (English)

    Ren Sili; Yang Shengrong; Zhao Yapu

    2004-01-01

    A novel super-hydrophobic stearic acid (STA) film with a water contact angle of 166°was prepared by chemical adsorption on aluminum wafer coated with polyethyleneimine (PEI) film.The micro-tribological behavior of the super-hydrophobic STA monolayer was compared with that of the polished and PEI-coated Al surfaces. The effect of relative humidity on the adhesion and friction was investigated as well. It was found that the STA monolayer showed decreased friction, while the adhesive force was greatly decreased by increasing the surface roughness of the Al wafer to reduce the contact area between the atomic force microscope (AFM) tip and the sample surface to be tested. Thus the friction and adhesion of the Al wafer was effectively decreased by generating the STA monolayer,which indicated that it could be feasible and rational to prepare a surface with good adhesion resistance and lubricity by properly controlling the surface morphology and the chemical composition. Both the adhesion and friction decreased as the relative humidity was lowered from 65% to 10%, though the decrease extent became insignificant for the STA monolayer.

  3. A thin-film aluminum strain gauges array in a flexible gastrointestinal catheter for pressure measurements

    Science.gov (United States)

    Sousa, P. J.; Silva, L. R.; Pinto, V. C.; Goncalves, L. M.; Minas, G.

    2016-08-01

    This paper presents an innovative approach to measure the pressure patterns associated with the motility and peristaltic movements in the upper gastrointestinal tract. This approach is based on inexpensive and easy to fabricate thin-film aluminum strain gauge pressure sensors using a flexible polyimide film (Kapton) as substrate and SU-8 structural support. These sensors are fabricated using well-established and standard photolithographic and wet etching techniques. Each sensor has a 3.4 mm2 area, allowing a fabrication process with a high level of sensors integration (four sensors in 1.7 cm), which is suitable for placing them in a single catheter. These strain gauges bend when pressure is applied and, consequently, their electrical resistance is changed. The fabricated sensors feature an almost linear response (R 2  =  0.9945) and an overall sensitivity of 6.4 mV mmHg-1. Their readout and control electronics were developed in a flexible Kapton ribbon cable and, together with the sensors, bonded and wrapped around a catheter-like structure. The sequential acquisition of the different signals is carried by a microcontroller with a 10 bit ADC at a sample rate of 250 Hz per-1 sensor. The signals are presented in a user friendly interface developed using the integrated development environment software, QtCreator IDE, for better visualization by physicians.

  4. Surface reaction mechanisms during ozone and oxygen plasma assisted atomic layer deposition of aluminum oxide.

    Science.gov (United States)

    Rai, Vikrant R; Vandalon, Vincent; Agarwal, Sumit

    2010-09-01

    We have elucidated the reaction mechanism and the role of the reactive intermediates in the atomic layer deposition (ALD) of aluminum oxide from trimethyl aluminum in conjunction with O(3) and an O(2) plasma. In situ attenuated total reflection Fourier transform infrared spectroscopy data show that both -OH groups and carbonates are formed on the surface during the oxidation cycle. These carbonates, once formed on the surface, are stable to prolonged O(3) exposure in the same cycle. However, in the case of plasma-assisted ALD, the carbonates decompose upon prolonged O(2) plasma exposure via a series reaction kinetics of the type, A (CH(3)) --> B (carbonates) --> C (Al(2)O(3)). The ratio of -OH groups to carbonates on the surface strongly depends on the oxidizing agent, and also the duration of the oxidation cycle in plasma-assisted ALD. However, in both O(3) and O(2) plasma cycles, carbonates are a small fraction of the total number of reactive sites compared to the hydroxyl groups.

  5. Study on wear behavior of plasma electrolytic oxidation coatings on aluminum alloy

    Institute of Scientific and Technical Information of China (English)

    CUI Shihai; HAN Jianmin; LI Weijing; KANG Suk-Bong; LEE Jung-Moo

    2006-01-01

    Thick and hard ceramic coatings were fabricated on A356 aluminum alloy by using plasma electrolytic oxidation(PEO) technique.The microstructure and phase composition of the PEO coatings were examined by using SEM and XRD method.It is found that the PEO coatings are mainly composed of crystalline α-Al2O3 and mullite.The dry sliding wear test of PEO coatings were carried out on a ring-on-ring wear machine.Results shows that there is hardly no wear loss of polished PEO coatings while the wear rate of uncoated aluminum alloy is 4.3×10-5 mm3·(N·m)-1 at a speed of 0.52 m·s-1 and a load of 40 N.

  6. Method of making highly porous, stable aluminum oxides doped with silicon

    Energy Technology Data Exchange (ETDEWEB)

    Khosravi-Mardkhe, Maryam; Woodfield, Brian F.; Bartholomew, Calvin H.; Huang, Baiyu

    2016-03-22

    The present invention relates to a method for making high surface area and large pore volume thermally stable silica-doped alumina (aluminum oxide) catalyst support and ceramic materials. The ability of the silica-alumina to withstand high temperatures in presence or absence of water and prevent sintering allows it to maintain good activity over a long period of time in catalytic reactions. The method of preparing such materials includes adding organic silicon reagents to an organic aluminum salt such as an alkoxide in a controlled quantity as a doping agent in a solid state, solvent deficient reaction followed by calcination. Alternatively, the organic silicon compound may be added after calcination of the alumina, followed by another calcination step. This method is inexpensive and simple. The alumina catalyst support material prepared by the subject method maintains high pore volumes, pore diameters and surface areas at very high temperatures and in the presence of steam.

  7. Sound Absorption Characteristics of Aluminum Foams Treated by Plasma Electrolytic Oxidation

    Directory of Open Access Journals (Sweden)

    Wei Jin

    2015-11-01

    Full Text Available Open-celled aluminum foams with different pore sizes were fabricated. A plasma electrolytic oxidation (PEO treatment was applied on the aluminum foams to create a layer of ceramic coating. The sound absorption coefficients of the foams were measured by an impedance tube and they were calculated by a transfer function method. The experimental results show that the sound absorption coefficient of the foam increases gradually with the decrease of pore size. Additionally, when the porosity of the foam increases, the sound absorption coefficient also increases. The PEO coating surface is rough and porous, which is beneficial for improvement in sound absorption. After PEO treatment, the maximum sound absorption of the foam is improved to some extent.

  8. Oxide film assisted dopant diffusion in silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Tin, Chin-Che, E-mail: cctin@physics.auburn.ed [Department of Physics, Auburn University, Alabama 36849 (United States); Mendis, Suwan [Department of Physics, Auburn University, Alabama 36849 (United States); Chew, Kerlit [Department of Electrical and Electronic Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Kuala Lumpur (Malaysia); Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin [Physical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent (Uzbekistan); Atabaev, Bakhtiyar [Institute of Electronics, Uzbek Academy of Sciences, 700125 Tashkent (Uzbekistan); Adedeji, Victor [Department of Chemistry, Geology and Physics, Elizabeth City State University, North Carolina 27909 (United States); Rusli [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore)

    2010-10-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  9. Factors Leading to the Formation of a Resistive Thin Film at the Bottom of Aluminum Electrolysis Cells

    Science.gov (United States)

    Coulombe, Marc-André; Soucy, Gervais; Rivoaland, Loig; Davies, Lynne

    2016-04-01

    Studies on sludge formation in aluminum electrolysis cells are rare and typically do not distinguish the deposits at the center of the cell from those composing the ledge toe because low voltage lost is expected at the center of the cell. However, high amount of sludge in the center leads to the formation of a thin film in an intermediate zone between the ledge toe and this center thick sludge accumulation. Looking at sludge deposits through composition mapping and microstructure analysis coming from four aluminum cells of two different aluminum reduction technologies, major factors leading to a thin resistive film were identified. This includes the formation of a suspension on the top of the thick deposit at the center of the cell, its displacement through magnetohydrodynamic induced movement by the metal pad, and the growth and thickening of a carbide sublayer making the thin film even more resistive. Correlation between thickening of the thin film and cathode voltage drop increase was observed. The postmortem analysis performed on six laboratory experiments was found useful to support different observations made on the industrial cells at lower cost.

  10. Ballistic phonon and thermal radiation transport across a minute vacuum gap in between aluminum and silicon thin films: Effect of laser repetitive pulses on transport characteristics

    Science.gov (United States)

    Yilbas, B. S.; Ali, H.

    2016-08-01

    Short-pulse laser heating of aluminum and silicon thin films pair with presence of a minute vacuum gap in between them is considered and energy transfer across the thin films pair is predicted. The frequency dependent Boltzmann equation is used to predict the phonon intensity distribution along the films pair for three cycles of the repetitive short-pulse laser irradiation on the aluminum film surface. Since the gap size considered is within the Casimir limit, thermal radiation and ballistic phonon contributions to energy transfer across the vacuum gap is incorporated. The laser irradiated field is formulated in line with the Lambert's Beer law and it is considered as the volumetric source in the governing equations of energy transport. In order to assess the phonon intensity distribution in the films pair, equivalent equilibrium temperature is introduced. It is demonstrated that thermal separation of electron and lattice sub-systems in the aluminum film, due to the short-pulse laser irradiation, takes place and electron temperature remains high in the aluminum film while equivalent equilibrium temperature for phonons decays sharply in the close region of the aluminum film interface. This behavior is attributed to the phonon boundary scattering at the interface and the ballistic phonon transfer to the silicon film across the vacuum gap. Energy transfer due to the ballistic phonon contribution is significantly higher than that of the thermal radiation across the vacuum gap.

  11. Synthesis and electrical characterization of Graphene Oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Yasin, Muhammad, E-mail: m.yasin@seecs.edu.pk [National University of Sciences and Technology, Islamabad (Pakistan); Polymer Electronics Research Laboratory, Gebze Technical University, Gebze (Turkey); Tauqeer, T.; Zaidi, Syed M.H. [National University of Sciences and Technology, Islamabad (Pakistan); San, Sait E. [Polymer Electronics Research Laboratory, Gebze Technical University, Gebze (Turkey); Department of Physics, Gebze Technical University, 41400 Kocaeli (Turkey); TUBITAK Marmara Research Center, Photonic Technologies Group, TUBITAK Gebze (Turkey); Mahmood, Asad [National Center of Excellence in Physical Chemistry, University of Peshawar, Peshawar (Pakistan); Köse, Muhammet E. [TUBITAK Marmara Research Center, Photonic Technologies Group, TUBITAK Gebze (Turkey); Canimkurbey, Betul [Polymer Electronics Research Laboratory, Gebze Technical University, Gebze (Turkey); Department of Physics, Gebze Technical University, 41400 Kocaeli (Turkey); Department of Physics, Amasya University, 05100 Amasya (Turkey); Okutan, Mustafa [Department of Physics, Yildiz Technical University, Davutpasa, 34210 Istanbul (Turkey)

    2015-09-01

    In this work, we have synthesized Graphene Oxide (GO) using modified Hummers method and investigated its electrical properties using parallel plate impedance spectroscopic technique. Graphene Oxide films were prepared using drop casting method on Indium Tin Oxide (ITO) coated glass substrate. Atomic force microscopy was used to characterize the films' microstructure and surface topography. Electrical characterization was carried out using LCR meter in frequency regime (100 Hz to 10 MHz) at different temperatures. AC conductivity σ{sub ac} of the films was observed to be varied with angular frequency, ω as ω{sup S}, with S < 1. The electrical properties of GO were found to be both frequency and temperature dependent. Analysis showed that GO film contains direct current (DC) and Correlated Barrier Hopping (CBH) conductivity mechanisms at low and high frequency ranges, respectively. Photon absorption and transmittance capability in the visible range and excellent electrical parameters of solution processed Graphene Oxide suggest its suitability for the realization of low cost flexible organic solar cells and organic Thin Film Transistors, respectively. - Highlights: • Synthesize and electrical characterization of Graphene Oxide (GO) Film was undertaken. • Temperature dependent impedance spectroscopy was used for electrical analysis. • AFM was used to characterize films' microstructure and surface topography. • Electrical parameters were found to vary with both temperature and frequency. • GO showed DC and CBH conductivity mechanisms at low and high frequency, respectively.

  12. Determining the Effect of Aluminum Oxide Nanoparticles on the Aggregation of Amyloid-Beta in Transgenic Caenorhabditis elegans

    Science.gov (United States)

    Patel, Suhag; Matticks, John; Howell, Carina

    2014-03-01

    The cause of Alzheimer's disease has been linked partially to genetic factors but the predicted environmental components have yet to be determined. In Alzheimer's, accumulation of amyloid-beta protein in the brain forms plaques resulting in neurodegeneration and loss of mental functions. It has been postulated that aluminum influences the aggregation of amyloid-beta. To test this hypothesis, transgenic Caenorhabditis elegans, CL2120, was used as a model organism to observe neurodegeneration in nematodes exposed to aluminum oxide nanoparticles. Behavioral testing, fluorescent staining, and fluorescence microscopy were used to test the effects of aggregation of amyloid-beta in the nervous systems of effected nematodes exposed to aluminum oxide nanoparticles. Energy-dispersive x-ray spectroscopy was used to quantify the total concentration of aluminum oxide that the worms were exposed to during the experiment. Exposure of transgenic and wild type worms to a concentration of 4 mg mL-1 aluminum oxide showed a decrease in the sinusoidal motion, as well as an infirmity of transgenic worms when compared to control worms. These results support the hypothesis that aluminum may play a role in neurodegeneration in C. elegans, and may influence and increase the progression of Alzheimer's disease. This work was supported by National Science Foundation grants DUE-1058829, DMR-0923047 DUE-0806660 and Lock Haven FPDC grants.

  13. Nanoporous anodic aluminum oxide with a long-range order and tunable cell sizes by phosphoric acid anodization on pre-patterned substrates

    Science.gov (United States)

    Surawathanawises, Krissada; Cheng, Xuanhong

    2014-01-01

    Nanoporous anodic aluminum oxide (AAO) has been explored for various applications due to its regular cell arrangement and relatively easy fabrication processes. However, conventional two-step anodization based on self-organization only allows the fabrication of a few discrete cell sizes and formation of small domains of hexagonally packed pores. Recent efforts to pre-pattern aluminum followed with anodization significantly improve the regularity and available pore geometries in AAO, while systematic study of the anodization condition, especially the impact of acid composition on pore formation guided by nanoindentation is still lacking. In this work, we pre-patterned aluminium thin films using ordered monolayers of silica beads and formed porous AAO in a single-step anodization in phosphoric acid. Controllable cell sizes ranging from 280 nm to 760 nm were obtained, matching the diameters of the silica nanobead molds used. This range of cell size is significantly greater than what has been reported for AAO formed in phosphoric acid in the literature. In addition, the relationships between the acid concentration, cell size, pore size, anodization voltage and film growth rate were studied quantitatively. The results are consistent with the theory of oxide formation through an electrochemical reaction. Not only does this study provide useful operational conditions of nanoindentation induced anodization in phosphoric acid, it also generates significant information for fundamental understanding of AAO formation. PMID:24535886

  14. Nanoporous anodic aluminum oxide with a long-range order and tunable cell sizes by phosphoric acid anodization on pre-patterned substrates.

    Science.gov (United States)

    Surawathanawises, Krissada; Cheng, Xuanhong

    2014-01-20

    Nanoporous anodic aluminum oxide (AAO) has been explored for various applications due to its regular cell arrangement and relatively easy fabrication processes. However, conventional two-step anodization based on self-organization only allows the fabrication of a few discrete cell sizes and formation of small domains of hexagonally packed pores. Recent efforts to pre-pattern aluminum followed with anodization significantly improve the regularity and available pore geometries in AAO, while systematic study of the anodization condition, especially the impact of acid composition on pore formation guided by nanoindentation is still lacking. In this work, we pre-patterned aluminium thin films using ordered monolayers of silica beads and formed porous AAO in a single-step anodization in phosphoric acid. Controllable cell sizes ranging from 280 nm to 760 nm were obtained, matching the diameters of the silica nanobead molds used. This range of cell size is significantly greater than what has been reported for AAO formed in phosphoric acid in the literature. In addition, the relationships between the acid concentration, cell size, pore size, anodization voltage and film growth rate were studied quantitatively. The results are consistent with the theory of oxide formation through an electrochemical reaction. Not only does this study provide useful operational conditions of nanoindentation induced anodization in phosphoric acid, it also generates significant information for fundamental understanding of AAO formation.

  15. Tunable structural color of anodic tantalum oxide films

    Institute of Scientific and Technical Information of China (English)

    Sheng Cui-Cui; Cai Yun-Yu; Dai En-Mei; Liang Chang-Hao

    2012-01-01

    Tantalum (Ta) oxide films with tunable structural color were fabricated easily using anodic oxidation.The structure,components,and surface valence states of the oxide filns were investigated by using gazing incidence X-ray diffractometry,X-ray photoelectron microscopy,and surface analytical techniques.Their thickness and optical properties were studied by using spectroscopic ellipsometry and total reflectance spectrum.Color was accurately defined using L*a*b* scale.The thickness of compact Ta2O5 films was linearly dependent on anodizing voltage.The film color was tunable by adjusting the anodic voltage.The difference in color appearance resulted from the interference behavior between the interfaces of air-oxide and oxide-metal.

  16. Unidirectional oxide hetero-interface thin-film diode

    International Nuclear Information System (INIS)

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼105 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 102 Hz < f < 106 Hz, providing a high feasibility for practical applications

  17. Unidirectional oxide hetero-interface thin-film diode

    Science.gov (United States)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-10-01

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ˜105 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 102 Hz < f < 106 Hz, providing a high feasibility for practical applications.

  18. Unidirectional oxide hetero-interface thin-film diode

    Energy Technology Data Exchange (ETDEWEB)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

  19. Fabrication of independent nickel microstructures with anodizing of aluminum,laser irradiation, and electrodeposition

    Institute of Scientific and Technical Information of China (English)

    T. Kikuchi; M. Sakairi; H. Takahashi

    2003-01-01

    Independent microstructures made of Ni metal were fabricated by five sequential processes: porous anodic oxide film for-mation, pore sealing, laser irradiation, Ni electroplating, and removal of the aluminum substrate and anodic oxide films. Aluminumplates and rods were anodized in an oxalic acid solution to form porous type anodic oxide films, and then immersed in boiling dis-tilled water for pore sealing. The anodized and pore-sealed specimens were irradiated with a pulsed neodymium-doped yttrium alu-minum garnet (Nd-YAG) laser beam in a Ni plating solution to remove anodic oxide film locally by rotating and moving up / downwith an XYZθ-stage. Nickel was deposited at the area where film had been removed by cathodic polarization in the solution beforeremoving the aluminum substrate and anodic oxide films in NaOH solutions. Cylindrical or plain network structures were fabricated successfully.

  20. Effect of environment on iodine oxidation state and reactivity with aluminum.

    Science.gov (United States)

    Smith, Dylan K; McCollum, Jena; Pantoya, Michelle L

    2016-04-28

    Iodine oxide is a highly reactive solid oxidizer and with its abundant generation of iodine gas during reaction, this oxidizer also shows great potential as a biocidal agent. A problem with using I2O5 in an energetic mixture is its highly variable reactive behavior. This study isolates the variable reactivity associated with I2O5 as a function of its chemical reaction in various environments. Specifically, aluminum fuel and iodine oxide powder are combined using a carrier fluid to aid intermixing. The carrier fluid is shown to significantly affect the oxidation state of iodine oxide, thereby affecting the reactivity of the mixture. Four carrier fluids were investigated ranging in polarity and water miscibility in increasing order from hexane accounts for the increase in reactivity seen in the mixtures processed in polar fluids. These results explain the chemical mechanisms underlying the variable reactivity of I2O5 that are a function of the oxide's highly reactive nature with its surrounding environment. These results will significantly impact the selection of carrier fluid in the synthesis approach for iodine containing reactive mixtures. PMID:27052472

  1. Indium tin oxide-silicon thin film solar cell

    International Nuclear Information System (INIS)

    Heterojunction solar cells consisting of amorphous indium tin oxide (ITO) thin films on silicon films have been fabricated and studied. The results show that the devices give a photovoltaic effect and rectifying characteristics. One of the main characteristics of amorphous ITO thin films is better transparency (>85%) over the complete useful window of the solar spectrum. The polarity observed is found to be consistent with V/sub oc/ = 0.34 volt, I/sub sc/ = 22mA/cm/sup 2/ and fill factor = 0.48. An attempt has been made to understand the conduction mechanism of indium tin oxide - silicon heterojunction

  2. Synthesis and characterization of thermally oxidized ZnO films

    Indian Academy of Sciences (India)

    A P Rambu; N Iftimie

    2014-05-01

    Metallic zinc thin films were deposited onto glass substrates using vacuum thermal evaporation method. By thermal oxidation of as-deposited Zn films, in ambient conditions, at different temperatures (570, 670 and 770 K, respectively, for 1 h) zinc oxide thin films were obtained. The structural characteristics of the obtained films were investigated by X-ray diffraction technique and atomic force microscopy. Characteristic XRD patterns of oxidized films show small and narrow peaks superimposed on the large broad background of the amorphous component of the substrate. Optical transmittance spectra were recorded and it was observed that the transmittances of the studied films increased with increasing oxidation temperature. The values of the optical bandgap, g, evaluated from Tauc plots, were found to be ranged between 3.22 and 3.27 eV. Electrical conductivity measurements were performed and it was observed that, after performing a heat treatment, the electrical conductivity of analysed samples decreased with one or two orders of magnitude. The gas sensitivity was investigated for some reducing gases such as acetone, methane and liquefied petroleum gas and it was observed that the films studied were selective to acetone.

  3. Preparation and Characterization of Fe Nanowire Arrays Embedded in Porous Anodic Aluminum Oxide Templates

    Institute of Scientific and Technical Information of China (English)

    迟广俊; 姚素薇

    2004-01-01

    Fe nanowire arrays are prepared by electrodeposition in porous anodic aluminum oxide template from a composite electrolyte solution. These nanowires have an uniform diameter of approximate 25 nm and a length in excess of 2.5μm.The micrographs and crystal structures of Fe nanowlres are studied by transmission electron microscopy (TEM), selected-area electron diffraction (SAED), and X-ray diffraction(XRD). It is found that each nanowire is essentially a single crystal and has a different orientation in each array. Hysteresis loops of Fe nanowire array show that its easy magnetization direction is perpendicular to the sample plane.

  4. Lithium cobalt oxide thin film and its electrochromism

    Science.gov (United States)

    Wei, Guang; Haas, Terry E.; Goldner, Ronald B.

    1989-06-01

    Thin films of lithium cobalt oxide have been prepared by RF-sputtering from powdered LiCoO2. These films permit reversible electrolytic removal of lithium ions upon application of an anodic voltage in a propylene carbonate-lithium perchlorate electrolyte, the films changing in color from a pale amber transparent state to a dark brown. A polycrystalline columnar film structure was revealed with SEM and TEM. X ray examination of the films suggests that the layered rhombohedral LiCoO2 structure is the major crystalline phase present. Oxidation-reduction titration and atomic absorption were used for the determination of the film stoichiometry. The results show that the as deposited-films on glass slides are lithium deficient (relative to the starting material) and show a high average cobalt oxidation state near +3.5. The measurements of dc conductivity suggest a band to band conduction at high temperature (300 to 430 K) and hopping conduction in localized states at low temperature (4 to 270 K). The thermoelectric power data show that the films behave as p-type semiconductors. Transmission and reflectance measurements from 400 nm to 2500 nm show significant near-IR reflectivity.

  5. Role of melt behavior in modifying oxidation distribution using an interface incorporated model in selective laser melting of aluminum-based material

    Science.gov (United States)

    Gu, Dongdong; Dai, Donghua

    2016-08-01

    A transient three dimensional model for describing the molten pool dynamics and the response of oxidation film evolution in the selective laser melting of aluminum-based material is proposed. The physical difference in both sides of the scan track, powder-solid transformation and temperature dependent physical properties are taken into account. It shows that the heat energy tends to accumulate in the powder material rather than in the as-fabricated part, leading to the formation of the asymmetrical patterns of the temperature contour and the attendant larger dimensions of the molten pool in the powder phase. As a higher volumetric energy density is applied (≥1300 J/mm3), a severe evaporation is produced with the upward direction of velocity vector in the irradiated powder region while a restricted operating temperature is obtained in the as-fabricated part. The velocity vector continuously changes from upward direction to the downward one as the scan speed increases from 100 mm/s to 300 mm/s, promoting the generation of the debris of the oxidation films and the resultant homogeneous distribution state in the matrix. For the applied hatch spacing of 50 μm, a restricted remelting phenomenon of the as-fabricated part is produced with the upward direction of the convection flow, significantly reducing the turbulence of the thermal-capillary convection on the breaking of the oxidation films, and therefore, the connected oxidation films through the neighboring layers are typically formed. The morphology and distribution of the oxidation are experimentally acquired, which are in a good agreement with the results predicted by simulation.

  6. Study on phosphating treatment of aluminum alloy: role of yttrium oxide

    Institute of Scientific and Technical Information of China (English)

    ZHANG Shenglin

    2009-01-01

    Zinc phosphate coatings formed on 6061-Al alloy, after dipping in phosphating solutions containing different amounts of Y2O3(yttrium oxide), were studied by scanning electron microscopy (SEM), X-ray diffraction (XRD) and electrochemical measurements. Significant variations in the morphology and corrosion resistance afforded by zinc phosphate coating were especially observed as Y2O3 in phosphating solution varied from 0 to 40 mg/L. The addition of Y2O3 changed the initial potential of the interface between aluminum alloy substrate and phosphating solution and increased the number of nucleation sites. The phosphate coating thereby was less porous structure and covered the surface of aluminum alloy completely within short phosphating time. Phosphate coating was mainly composed of Zn3(PO4)2-4H2O (hopeite) and AIPO4(aluminum phosphate). Y2O3, as an additive of phosphatization, accelerated precipitation and refined the gain size of phosphate coating. The corrosion resistance of zinc phosphate coating in 3% NaCl solution was improved as shown by po-larization measurement. In the present research, the optimal amount of Y2O3 was 10-20 mg/L, and the optimal phosphating time was 600 s.

  7. CO2 gas sensitivity of sputtered zinc oxide thin films

    Indian Academy of Sciences (India)

    P Samarasekara; N U S Yapa; N T R N Kumara; M V K Perera

    2007-04-01

    For the first time, sputtered zinc oxide (ZnO) thin films have been used as a CO2 gas sensor. Zinc oxide thin films have been synthesized using reactive d.c. sputtering method for gas sensor applications, in the deposition temperature range from 130–153°C at a chamber pressure of 8.5 mbar for 18 h. Argon and oxygen gases were used as sputtering and reactive gases, respectively. ZnO phase could be crystallized using a pure metal target of zinc. The structure of the films determined by means of X-ray diffraction method indicates that the zinc oxide single phase can be fabricated in this substrate temperature range. The sensitivity of the film synthesized at substrate temperature of 130°C is 2.17 in the presence of CO2 gas at a measuring temperature of 100°C.

  8. Electrostatic spray deposited zinc oxide films for gas sensor applications

    International Nuclear Information System (INIS)

    In this work, thin films of zinc oxide (ZnO) for gas-sensor applications were deposited on platinum coated alumina substrate, using electrostatic spray deposition (ESD) technique. As precursor solution zinc acetate in ethanol was used. Scanning electron microscopy (SEM) evaluation showed a porous and homogeneous film morphology and the energy dispersive X-ray analysis (EDX) confirmed the composition of the films with no presence of other impurities. The microstructure studied with X-ray diffraction (XRD) and Raman spectroscopy indicated that the ZnO oxide films are crystallized in a hexagonal wurtzite phase. The films showed good sensitivity to 1 ppm nitrogen dioxide (NO2) at 300 oC while a much lower sensitivity to 12 ppm hydrogen sulphide (H2S)

  9. Nanotwin hardening in a cubic chromium oxide thin film

    Directory of Open Access Journals (Sweden)

    Kazuma Suzuki

    2015-09-01

    Full Text Available NaCl-type (B1 chromium oxide (CrO has been expected to have a high hardness value and does not exist as an equilibrium phase. We report a B1-based Cr0.67O thin film with a thickness of 144 nm prepared by pulsed laser deposition as an epitaxial thin film on a MgO single crystal. The thin film contained a number of stacking faults and had a nanotwinned structure composed of B1 with disordered vacancies and corundum structures. The Cr0.67O thin film had a high indentation hardness value of 44 GPa, making it the hardest oxide thin film reported to date.

  10. Fluoride Selective Optical Sensor Based on Aluminum(III)-Octaethylporphyrin in Thin Polymeric Film: Further Characterization and Practical Application

    OpenAIRE

    Badr, Ibrahim H. A.; Meyerhoff, Mark E.

    2005-01-01

    More detailed analytical studies of a new fluoride selective optical sensor based on the use of aluminum(III)-octaethylporphyrin and a lipophilic pH indicator (4′,5′-dibromofluorescein octadecyl ester; ETH-7075) within a thin plasticized poly(vinyl chloride) film are reported. The sensor exhibits extraordinary optical selectivity for fluoride over a wide range of other anions, including anions with far more positive free energies of hydration (e.g., perchlorate, thiocyanate, nitrate, etc.). U...

  11. Structural and electrochromic properties of sol-gel made tantalum oxide and tungsten oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Zayim, E.Oe.; Tepehan, F.Z. [Istanbul Technical Univ. Dept. of Physics, Istanbul (Turkey)

    2004-07-01

    Tantalum oxide and tungsten oxide thin films were prepared by spin coating techniques. The effect of tantalum concentration on the optical, structural and electrochromic properties of the films were studied. The optical, structural and electrochromic properties of pure, WO{sub 3}, Ta{sub 2}O{sub 5} and Ta{sub 2}O{sub 5} doped WO{sub 3} thin films are described and compared to each other. Film characterization was made by cyclic voltammetry (CV) and scanning electron microscopy (SEM). The coatings were studied electrochemically in 1 M LiClO{sub 4} in propylene carbonate electrolytes. Electrochemical and optical characterizations show that the tantalum concentration affects the properties of sol-gel derived films significantly. Mechanical tests show that tantalum oxide films resist to abrasion well. (orig.)

  12. Structural and electrochromic properties of sol-gel made tantalum oxide and tungsten oxide films

    International Nuclear Information System (INIS)

    Tantalum oxide and tungsten oxide thin films were prepared by spin coating techniques. The effect of tantalum concentration on the optical, structural and electrochromic properties of the films were studied. The optical, structural and electrochromic properties of pure, WO3, Ta2O5 and Ta2O5 doped WO3 thin films are described and compared to each other. Film characterization was made by cyclic voltammetry (CV) and scanning electron microscopy (SEM). The coatings were studied electrochemically in 1 M LiClO4 in propylene carbonate electrolytes. Electrochemical and optical characterizations show that the tantalum concentration affects the properties of sol-gel derived films significantly. Mechanical tests show that tantalum oxide films resist to abrasion well. (orig.)

  13. In situ monitoring of thermal crystallization of ultrathin tris(8-hydroxyquinoline) aluminum films using surface-enhanced Raman scattering.

    Science.gov (United States)

    Muraki, Naoki

    2014-01-01

    Thermal crystallization of 3, 10, and 60 nm-thick tris(8-hydroxyquinoline)aluminum (Alq3) films is studied using surface-enhanced Raman scattering with a constant heating rate. An abrupt higher frequency shift of the quinoline-stretching mode is found to be an indication of a phase transition of Alq3 molecules from amorphous to crystalline. While the 60 nm-thick film shows the same crystallization temperature as a bulk sample, the thinner films were found to have a lower crystallization temperature and slower rate of crystallization. Non-isothermal kinetics analysis is performed to quantify kinetic properties such as the Avrami exponent constants and crystallization rates of ultrathin Alq3 films. PMID:24405952

  14. Characteristics and properties of metal aluminum thin films prepared by electron cyclotron resonance plasma-assisted atomic layer deposition technology

    Institute of Scientific and Technical Information of China (English)

    Xiong Yu-Qing; Li Xing-Cun; Chen Qiang; Lei Wen-Wen; Zhao Qiao; Sang Li-Jun; Liu Zhong-Wei; Wang Zheng-Duo; Yang Li-Zhen

    2012-01-01

    Metal aluminum (Al) thin films are prepared by 2450 MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas.We focus our attention on the plasma source for the thin-film preparation and annealing of the as-deposited films relative to the surface square resistivity.The square resistivity of as-deposited Al films is greatly reduced after annealing and almost reaches the value of bulk metal.Through chemical and structural analysis,we conclude that the square resistivity is determined by neither the contaminant concentration nor the surface morphology,but by both the crystallinity and crystal size in this process.

  15. Sn-doped Zinc Oxide thin films for LPG sensors

    Directory of Open Access Journals (Sweden)

    R. K. Nath

    2012-03-01

    Full Text Available Sn doped zinc oxide (ZnO:Sn thin films have been prepared by chemical spray pyrolysis technique using Zn(CH3COO2 as a precursor solution and SnCl4 as a doping solution respectively. The dopant concentration (Sn/Zn at% is varied from 0 to 1.5 at%. The structural, morphological, optical and electrical properties of the films are explored and then tested for LPG sensing. The resistivity of the Sn-doped films decreases with the Sn doping up to 0.5at%, while at a higher doping concentration the disorder produced in the lattice causes an increase in resistivity of the films. Exposure of LPG decreases the resistance of undoped and doped films. The response of the film is measured for both ZnO and ZnO:Sn films at different operating temperature (275-400℃ and concentration (vol % of LPG in air. It is observed that Sn-doped ZnO films are more sensitive to LPG than undoped ZnO film. In this work, maximum response (~88 % is observed for 0.5at % ZnO:Sn film for 1 vol% of LPG in air at 300℃. Further all the films have shown faster response and recovery times at higher operating temperatures

  16. Method for Fabricating Textured High-Haze ZnO:Al Transparent Conduction Oxide Films on Chemically Etched Glass Substrates.

    Science.gov (United States)

    Park, Hyeongsik; Nam, Sang-Hun; Shin, Myunghun; Ju, Minkyu; Lee, Youn-Jung; Yu, Jung-Hoon; Jung, Junhee; Kim, Sunbo; Ahn, Shihyun; Boo, Jin-Hyo; Yi, Junsin

    2016-05-01

    We developed a technique for forming textured aluminum-doped zinc oxide (ZnO:Al) transparent conductive oxide (TCO) films on glass substrates, which were etched using a mixture of hydrofluoric (HF) and hydrochloric (HCl) acids. The etching depth and surface roughness increased with an increase in the HF content and the etching time. The HF-based residues produced insoluble hexafluorosilicate anion- and oxide impurity-based semipermeable films, which reduced the etching rate. Using a small amount of HCl dissolved the Ca compounds, helping to fragment the semipermeable film. This formed random, complex structures on the glass substrates. The angled deposition of three layers of ZnO:Al led to the synthesis of multiscaled ZnO:Al textures on the glass substrates. The proposed approach resulted in textured ZnO:Al TCO films that exhibited high transmittance (-80%) and high haze (> 40%) values over wavelengths of 400-1000 nm, as well as low sheet resistances (< 18 Ω/sq)..Si tandem solar cells based on the ZnO:Al textured TCO films exhibited photocurrents and cell efficiencies that were 40% higher than those of cells with conventional TCO films. PMID:27483840

  17. Determination of oxygen diffusion kinetics during thin film ruthenium oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Coloma Ribera, R., E-mail: r.colomaribera@utwente.nl; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F. [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

    2015-08-07

    In situ X-ray reflectivity was used to reveal oxygen diffusion kinetics for thermal oxidation of polycrystalline ruthenium thin films and accurate determination of activation energies for this process. Diffusion rates in nanometer thin RuO{sub 2} films were found to show Arrhenius behaviour. However, a gradual decrease in diffusion rates was observed with oxide growth, with the activation energy increasing from about 2.1 to 2.4 eV. Further exploration of the Arrhenius pre-exponential factor for diffusion process revealed that oxidation of polycrystalline ruthenium joins the class of materials that obey the Meyer-Neldel rule.

  18. NEXAFS Study of Air Oxidation for Mg Nanoparticle Thin Film

    Science.gov (United States)

    Ogawa, S.; Murakami, S.; Shirai, K.; Nakanishi, K.; Ohta, T.; Yagi, S.

    2013-03-01

    The air oxidation reaction of Mg nanoparticle thin film has been investigated by Mg K-edge NEXAFS technique. It is revealed that MgO is formed on the Mg nanoparticle surfaces at the early stage of the air oxidation for Mg nanoparticle thin film. The simulation of NEXAFS spectrum using standard spectra indicates the existence of complex magnesium carbonates (x(MgCO3).yMg(OH2).z(H2O)) in addition to MgO at the early stage of the air oxidation.

  19. Characterizations of photoconductivity of graphene oxide thin films

    Directory of Open Access Journals (Sweden)

    Shiang-Kuo Chang-Jian

    2012-06-01

    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  20. Photo-oxidation Behaviour of EVA Antimicrobial Films

    Science.gov (United States)

    Botta, L.; Scaffaro, R.; La Mantia, F. P.

    2010-06-01

    In this work the photo-oxidation of neat EVA and antimicrobial EVA/Nisin films was studied. Two EVA samples—containing two different vinyl acetate levels—were added with different amounts of nisin. The influence of the matrix type and of the nisin content on the photo-oxidation behaviour was evaluated. The photo-oxidation has been followed by monitoring the change of the mechanical and spectroscopic properties upon artificial exposure to UV-B light. The results revealed that the films incorporating nisin show a better photo resistance with respect to the neat polymer. This improvement becomes weaker with decreasing the amount of nisin incorporated. Moreover the EVA 28 based films showed a much slower photo-oxidation rate in comparison with the EVA 14 based ones.

  1. Effect of environment on iodine oxidation state and reactivity with aluminum.

    Science.gov (United States)

    Smith, Dylan K; McCollum, Jena; Pantoya, Michelle L

    2016-04-28

    Iodine oxide is a highly reactive solid oxidizer and with its abundant generation of iodine gas during reaction, this oxidizer also shows great potential as a biocidal agent. A problem with using I2O5 in an energetic mixture is its highly variable reactive behavior. This study isolates the variable reactivity associated with I2O5 as a function of its chemical reaction in various environments. Specifically, aluminum fuel and iodine oxide powder are combined using a carrier fluid to aid intermixing. The carrier fluid is shown to significantly affect the oxidation state of iodine oxide, thereby affecting the reactivity of the mixture. Four carrier fluids were investigated ranging in polarity and water miscibility in increasing order from hexane X-ray photoelectric spectroscopy (XPS) and differential scanning calorimetry (DSC). Results are compared with thermal equilibrium simulations. Flame speeds increased with polarity of the fluid used to intermix the powder and ranged from 180 to 1202 m s(-1). The I2O5 processed in the polar fluids formed hydrated states of iodine oxide: HIO3 and HI3O8; and, the nonpolar and dry-mixed samples formed: I2O4 and I4O9. During combustion, the hydrated iodine oxides rapidly dehydrated from HIO3 to HI3O8 and from HI3O8 to I2O5. Both steps release 25% of their mass as vapor during combustion. Increased gas generation enhances convective energy transport and accounts for the increase in reactivity seen in the mixtures processed in polar fluids. These results explain the chemical mechanisms underlying the variable reactivity of I2O5 that are a function of the oxide's highly reactive nature with its surrounding environment. These results will significantly impact the selection of carrier fluid in the synthesis approach for iodine containing reactive mixtures.

  2. Flexible gastrointestinal motility pressure sensors based on aluminum thin-film strain-gauge arrays

    International Nuclear Information System (INIS)

    This paper reports on an innovative approach to measuring intraluminal pressure in the upper gastrointestinal (GI) tract, especially monitoring GI motility and peristaltic movements. The proposed approach relies on thin-film aluminum strain gauges deposited on top of a Kapton membrane, which in turn lies on top of an SU-8 diaphragm-like structure. This structure enables the Kapton membrane to bend when pressure is applied, thereby affecting the strain gauges and effectively changing their electrical resistance. The sensor, with an area of 3.4 mm2, is fabricated using photolithography and standard microfabrication techniques (wet etching). It features a linear response (R2 = 0.9987) and an overall sensitivity of 2.6 mV mmHg−1. Additionally, its topology allows a high integration capability. The strain gauges’ responses to pressure were studied and the fabrication process optimized to achieve high sensitivity, linearity, and reproducibility. The sequential acquisition of the different signals is carried out by a microcontroller, with a 10-bit ADC and a sample rate of 250 Hz. The pressure signals are then presented in a user-friendly interface, developed using the Integrated Development Environment software, QtCreator IDE, for better visualization by physicians. (paper)

  3. Nitrogen doped zinc oxide thin film

    Energy Technology Data Exchange (ETDEWEB)

    Li, Sonny X.

    2003-12-15

    To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

  4. Oxide film on metal substrate reduced to form metal-oxide-metal layer structure

    Science.gov (United States)

    Youngdahl, C. A.

    1967-01-01

    Electrically conductive layer of zirconium on a zirconium-oxide film residing on a zirconium substrate is formed by reducing the oxide in a sodium-calcium solution. The reduced metal remains on the oxide surface as an adherent layer and seems to form a barrier that inhibits further reaction.

  5. Oxygen deficiency in oxide films grown by PLD

    Energy Technology Data Exchange (ETDEWEB)

    Davila, Y., E-mail: DAVILA@insp.jussieu.fr [INSP, UMR 7188 CNRS Universite Paris VI, 140 rue de Lourmel, 75015 Paris (France); Petitmangin, A.; Hebert, C.; Perriere, J. [INSP, UMR 7188 CNRS Universite Paris VI, 140 rue de Lourmel, 75015 Paris (France); Seiler, W. [LIM, ENSAM-CNRS UMR 8006, 151 Bd de l' Hopital, 75013 Paris (France)

    2011-04-01

    The incorporation of oxygen atoms in oxide films grown by pulsed laser deposition depends upon the oxygen pressure and laser power density. By carefully controlling these two parameters it is possible to control the oxygen deficiency in the samples, and thus to change their physical properties from insulating and transparent to absorbing and conducting. By using X-ray diffraction, Rutherford backscattering spectroscopy and resistivity measurements, we show that depending upon the oxide materials oxygen deficiency in the films can induce either the growth of stable sub-oxide phases or the formation of nanocomposite films by phase separation. The first case corresponds to oxides with a mixed valency cation like Ti, which leads to the formation of stable, crystalline and highly conductive TiO{sub x} sub-oxide phases. The second case is well described by the indium tin oxides (ITO) in which a large oxygen deficiency leads to metallic clusters embedded into a stoichiometric matrix, i.e. nanocomposite films. This phenomenon is due to the fact that sub-oxides of these compounds are not stable and thus the oxygen deficiency induced a phase separation.

  6. Effects of rare earth oxide additives on the thermal behaviors of aluminum nitride ceramics

    Institute of Scientific and Technical Information of China (English)

    YAO Yijun; WANG Ling; LI Chuncheng; JIANG Xiaolong; QIU Tai

    2009-01-01

    The effects of Y_2O_3 and Er_2O_3 on the sintering behaviors, thermal properties and microstructure of AIN ceramics were investigated. The ex-perimental results show that the sintering temperature can be decreased; the relative density and thermal behavior can be improved by adding rare earth oxide in AIN ceramics. For AIN ceramics with 3 wt.% Er_2O_3 additive, the relative density is 98.8%, and the thermal conductivity reaches 106 W·m~(-1)·K~(-1). The microstructure research found that no obvious aluminum erbium oxide was found in AIN ceramics doped with 3 wt.% Er_2O_3, which favored the improvement of the thermal conductivity of AIN ceramics.

  7. A molecular beacon biosensor based on the nanostructured aluminum oxide surface.

    Science.gov (United States)

    Che, Xiangchen; He, Yuan; Yin, Haocheng; Que, Long

    2015-10-15

    A new class of molecular beacon biosensors based on the nanostructured aluminum oxide or anodic aluminum oxide (AAO) surface is reported. In this type of sensor, the AAO surface is used to enhance the fluorescent signals of the fluorophore-labeled hairpin DNA. When a target DNA with a complementary sequence to that of the hairpin DNA is applied on the sensor, the fluorophores are forced to move away from the AAO surface due to the hybridization between the hairpin DNA and the target DNA, resulting in the significant decrease of the fluorescent signals. The observed signal reduction is sufficient to achieve a demonstrated detection limit of 10nM, which could be further improved by optimizing the AAO surface. The control experiments have also demonstrated that the bioassay used in the experiments has excellent specificity and selectivity, indicating the great promise of this type of sensor for diagnostic applications. Since the arrayed AAO micropatterns can be fabricated on a single chip in a cost-effective manner, the arrayed sensors could provide an ideal technical platform for studying fundamental biological process and monitoring disease biomarkers.

  8. Anodic aluminum oxide with fine pore size control for selective and effective particulate matter filtering

    Science.gov (United States)

    Zhang, Su; Wang, Yang; Tan, Yingling; Zhu, Jianfeng; Liu, Kai; Zhu, Jia

    2016-07-01

    Air pollution is widely considered as one of the most pressing environmental health issues. Particularly, atmospheric particulate matters (PM), a complex mixture of solid or liquid matter suspended in the atmosphere, are a harmful form of air pollution due to its ability to penetrate deep into the lungs and blood streams, causing permanent damages such as DNA mutations and premature death. Therefore, porous materials which can effectively filter out particulate matters are highly desirable. Here, for the first time, we demonstrate that anodic aluminum oxide with fine pore size control fabricated through a scalable process can serve as effective and selective filtering materials for different types of particulate matters (such as PM2.5, PM10). Combining selective and dramatic filtering effect, fine pore size control and a scalable process, this type of anodic aluminum oxide templates can potentially serve as a novel selective filter for different kinds of particulate matters, and a promising and complementary solution to tackle this serious environmental issue.

  9. Effects of iron and aluminum oxides and clay content on penetration resistance of five Greek soils

    Directory of Open Access Journals (Sweden)

    Stefanos Stefanou

    2013-07-01

    Full Text Available The effect of amorphous and crystalline iron (Fe and aluminum (Al oxides and oxy-hydroxides as well as clay on soil penetration resistance of five Greek soils, as a function of soil water suction was studied for the whole range of soil moisture. The soils tested were of loamy texture and were collected from cultivated and non-cultivated areas of north and central Greece (Macedonia and Thessaly. The study aimed at understanding the role of the above mentioned soil components on penetration resistance. The findings showed that the increase of iron and aluminum oxides and oxy-hydroxides content resulted in an increase of soil penetration resistance and the relationships between them were significant. Crystalline iron forms found to have a more profound effect on penetration resistance as compared to amorphous iron forms. Finally, positive and significant relationships were also found between penetration resistance and clay content. However, it is not entirely clear which of the two soil components plays the most important role in penetration resistance changes in soils.

  10. An investigation of the electrical behavior of thermally-sprayed aluminum oxide

    Energy Technology Data Exchange (ETDEWEB)

    Swindeman, C.J.; Seals, R.D.; White, R.L.; Murray, W.P.; Cooper, M.H.

    1996-09-01

    Electrical properties of plasma-sprayed aluminum oxide coatings were measured at temperatures up to 600 C. High purity (> 99.5 wt% pure Al{sub 2}O{sub 3}) alumina powders were plasma-sprayed on stainless steel substrates over a range of power levels, using two gun configurations designed to attain different spray velocities. Key electrical properties were measured to evaluate the resultant coatings as potential insulating materials for electrostatic chucks (ESCs) being developed for semiconductor manufacturing. Electrical resistivity of all coatings was measured under vacuum upon heating and cooling over a temperature range of 20 to 600 C. Dielectric constants were also measured under the same test conditions. X-ray diffraction was performed to examine phase formation in the coatings. Results show the important of powder composition and careful selection and control of spray conditions for optimizing electrical behavior in plasma-sprayed aluminum oxide, and point to the need for further studies to characterize the relationship between high temperature electrical properties, measured plasma-spray variables, and specific microstructural and compositional coating features.

  11. Preparation and characterization of solid-state sintered aluminum-doped zinc oxide with different alumina contents

    Indian Academy of Sciences (India)

    Yu-Hsien Chou; J L H Chau; W L Wang; C S Chen; S H Wang; C C Yang

    2011-06-01

    Aluminum-doped zinc oxide (AZO) ceramics with 0−2.5 wt.% alumina (Al2O3) content were prepared using a solid-state reaction technique. It was found that AZO grains became finer in size and more irregular in shape than undoped ZnO as the Al2O3 content increased. Addition of Al2O3 dopant caused the formation of phase transformation stacking faults in ZnO grains. The second phase, ZnAl2O4 spinel, was observed at the grain boundaries and triple junctions, and inside the grains. In this study, a 3-inch circular Al2O3 (2 wt.%)-doped ZnO ceramic target sintered at 1500°C for 6 h has a relative density of 99.8% with a resistivity of 1.8 × 10-3 -cm. The AZO film exhibits optical transparency of 90.3% in the visible region and shows an electrical resistivity of 2.5 × 10-3 -cm.

  12. Effect of film thickness on electrochromic activity of spray deposited iridium oxide thin films

    International Nuclear Information System (INIS)

    Electrochromic iridium oxide thin films were deposited onto fluorine doped tin oxide (FTO) coated glass substrates from an aqueous iridium chloride solution using a spray pyrolysis process. The deposition temperature was 250 deg. C. The solution quantity was varied from 25 to 55 ml to obtain films with different thickness. The as-deposited samples were X-ray amorphous. The electrochromic properties were studied in proton containing electrolyte (0.5N, H2SO4) using cyclic voltammetry, chronoamperometry and spectrophotometry techniques. The films exhibit anodic electrochromism. The colouration efficiency at 630 nm was maximum for thicker sample, owing to its large charge storage capacity and hydration

  13. Effect of film thickness on electrochromic activity of spray deposited iridium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, P.S. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (India)]. E-mail: psp_phy@unishivaji.ac.in; Mujawar, S.H. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (India); Sadale, S.B. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (India); Deshmukh, H.P. [Department of Physics, Bharati Vidyapeeth, Deemed University, Y.M. College, Pune (India); Inamdar, A.I. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (India)

    2006-10-10

    Electrochromic iridium oxide thin films were deposited onto fluorine doped tin oxide (FTO) coated glass substrates from an aqueous iridium chloride solution using a spray pyrolysis process. The deposition temperature was 250 deg. C. The solution quantity was varied from 25 to 55 ml to obtain films with different thickness. The as-deposited samples were X-ray amorphous. The electrochromic properties were studied in proton containing electrolyte (0.5N, H{sub 2}SO{sub 4}) using cyclic voltammetry, chronoamperometry and spectrophotometry techniques. The films exhibit anodic electrochromism. The colouration efficiency at 630 nm was maximum for thicker sample, owing to its large charge storage capacity and hydration.

  14. Growth control of the oxidation state in vanadium oxide thin films

    Science.gov (United States)

    Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; Egami, Takeshi; Lee, Ho Nyung

    2014-12-01

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research but also technological applications that utilize the subtle change in the physical properties originating from the metal-insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V2 + 3 O 3 , V + 4 O 2 , and V2 + 5 O 5 . A well pronounced MIT was only observed in VO2 films grown in a very narrow range of oxygen partial pressure P(O2). The films grown either in lower (25 mTorr) result in V2O3 and V2O5 phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO2 thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.

  15. Comparative Assessment of Antimicrobial Efficiency of Ionic Silver, Silver Monoxide, and Metallic Silver Incorporated onto an Aluminum Oxide Nanopowder Carrier

    OpenAIRE

    Agnieszka Maria Jastrzębska; Ewa Karwowska; Andrzej R. Olszyna; Antoni R. Kunicki

    2013-01-01

    The present paper provides comparative assessment of antimicrobial efficiency of ionic silver (Ag+), silver monoxide (Ag2O), and metallic silver (Ag) incorporated onto an aluminum oxide nanopowder carrier (Al2O3). The deposition of Ag+ ions, Ag2O nanoparticles, and Ag nanoparticles on an different phases of aluminum oxide nanopowder carrier was realized using consecutive stages of dry sol-gel method. The Al2O3-Ag+, Al2O3-Ag2O, and Al2O3-Ag nanopowders were widely characterized qualitatively a...

  16. Submicron fabrication by local anodic oxidation of germanium thin films

    Science.gov (United States)

    Oliveira, A. B.; Medeiros-Ribeiro, G.; Azevedo, A.

    2009-08-01

    Here we describe a lithography scheme based on the local anodic oxidation of germanium film by a scanning atomic force microscope in a humidity-controlled atmosphere. The oxidation kinetics of the Ge film were investigated by a tapping mode, in which a pulsed bias voltage was synchronized and applied with the resonance frequency of the cantilever, and by a contact mode, in which a continuous voltage was applied. In the tapping mode we clearly identified two regimes of oxidation as a function of the applied voltage: the trench width increased linearly during the vertical growth and increased exponentially during the lateral growth. Both regimes of growth were interpreted taking into consideration the Cabrera-Mott mechanism of oxidation applied to the oxide/Ge interface. We also show the feasibility of the bottom-up fabrication process presented in this work by showing a Cu nanowire fabricated on top of a silicon substrate.

  17. Advantages of transparent conducting oxide thin films with controlled permittivity for thin film photovoltaic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Gessert, T.A., E-mail: tim_gessert@nrel.gov; Burst, J.; Li, X.; Scott, M.; Coutts, T.J.

    2011-08-31

    Our recent investigations have identified a pathway to produce transparent conducting oxide (TCO) films that demonstrate higher infrared transparency. The technique involves controlling the dielectric permittivity of the TCO film such that the electrical properties are maintained, but the plasma frequency ({omega}{sub p}) is shifted to longer wavelength. This has the effect of reducing free-carrier absorption in the visible and near-infrared spectral region, thus producing a TCO film with higher optical transmission. The technique has been demonstrated for sputtered films of indium tin oxide by adding small amounts of ZrO{sub 2} to a ceramic sputtering target, and for SnO{sub 2}:F films deposited by chemical vapor deposition using a metalorganic Zr source.

  18. Cathodic electrodeposition of cobalt oxide films using polyelectrolytes

    International Nuclear Information System (INIS)

    Composite films consisting of cobalt hydroxide and polyelectrolytes, such as poly(diallyldimethylammonium chloride) (PDDA) and polyethylenimine (PEI), were obtained by electrodeposition. In the proposed method, electrophoretic deposition of PDDA macromolecules or PEI-Co2+ complexes has been combined with cathodic electrosynthesis of cobalt hydroxide. By varying the concentration of the polyelectrolytes in solutions, the deposition time and the current density, the amount of deposited material and its composition can be varied. The composite deposits have been studied by scanning, transmission and atomic force microscopy, X-ray diffraction and thermogravimetric analysis. The obtained results have been compared with the results of investigation of pure cobalt hydroxide films. Heat treatment of the deposits resulted in decomposition of the hydroxide precursor and burning out of polymer to form cobalt oxide films. This method enables the formation of thick nanostructured oxide films

  19. Murine pulmonary responses after sub-chronic exposure to aluminum oxide-based nanowhiskers

    Directory of Open Access Journals (Sweden)

    Adamcakova-Dodd Andrea

    2012-06-01

    Full Text Available Abstract Background Aluminum oxide-based nanowhiskers (AO nanowhiskers have been used in manufacturing processes as catalyst supports, flame retardants, adsorbents, or in ceramic, metal and plastic composite materials. They are classified as high aspect ratio nanomaterials. Our aim was to assess in vivo toxicity of inhaled AO nanowhisker aerosols. Methods Primary dimensions of AO nanowhiskers specified by manufacturer were 2–4 nm x 2800 nm. The aluminum content found in this nanomaterial was 30% [mixed phase material containing Al(OH3 and AlOOH]. Male mice (C57Bl/6 J were exposed to AO nanowhiskers for 4 hrs/day, 5 days/wk for 2 or 4 wks in a dynamic whole body exposure chamber. The whiskers were aerosolized with an acoustical dry aerosol generator that included a grounded metal elutriator and a venturi aspirator to enhance deagglomeration. Average concentration of aerosol in the chamber was 3.3 ± 0.6 mg/m3 and the mobility diameter was 150 ± 1.6 nm. Both groups of mice (2 or 4 wks exposure were necropsied immediately after the last exposure. Aluminum content in the lung, heart, liver, and spleen was determined. Pulmonary toxicity assessment was performed by evaluation of bronchoalveolar lavage (BAL fluid (enumeration of total and differential cells, total protein, activity of lactate dehydrogenase [LDH] and cytokines, blood (total and differential cell counts, lung histopathology and pulmonary mechanics. Results Following exposure, mean Al content of lungs was 0.25, 8.10 and 15.37 μg/g lung (dry wt respectively for sham, 2 wk and 4 wk exposure groups. The number of total cells and macrophages in BAL fluid was 2-times higher in animals exposed for 2 wks and 6-times higher in mice exposed for 4 wks, compared to shams (p p  Conclusions Sub-chronic inhalation exposures to aluminum-oxide based nanowhiskers induced increased lung macrophages, but no inflammatory or toxic responses were observed.

  20. Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric

    Science.gov (United States)

    Liu, Ao; Liu, Guoxia; Zhu, Huihui; Shin, Byoungchul; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

    2016-06-01

    Solution-processed p-type oxide semiconductors have recently attracted increasing interests for the applications in low-cost optoelectronic devices and low-power consumption complementary metal-oxide-semiconductor circuits. In this work, p-type nickel oxide (NiOx) thin films were prepared using low-temperature solution process and integrated as the channel layer in thin-film transistors (TFTs). The electrical properties of NiOx TFTs, together with the characteristics of NiOx thin films, were systematically investigated as a function of annealing temperature. By introducing aqueous high-k aluminum oxide (Al2O3) gate dielectric, the electrical performance of NiOx TFT was improved significantly compared with those based on SiO2 dielectric. Particularly, the hole mobility was found to be 60 times enhancement, quantitatively from 0.07 to 4.4 cm2/V s, which is mainly beneficial from the high areal capacitance of the Al2O3 dielectric and high-quality NiOx/Al2O3 interface. This simple solution-based method for producing p-type oxide TFTs is promising for next-generation oxide-based electronic applications.

  1. Effect of interfacial oxide thickness on the photocatalytic activity of magnetron-sputtered TiO2 coatings on aluminum substrate

    DEFF Research Database (Denmark)

    Daviðsdóttir, Svava; Petit, Jean-Pierre; Shabadi, Rajashekhara;

    2015-01-01

    measurements showed a maximum UV-light absorption by titanium dioxide occurring slightly prior to the energy of the maximum photocurrent. The photocurrent of titanium dioxide decreases with increasing thickness of the aluminum oxide interface layer. Aluminum oxide acts as an insulator; disfavoring the electron...

  2. Effect of interfacial oxide thickness on the photocatalytic activity of magnetron-sputtered TiO2coatings on aluminum substrate

    DEFF Research Database (Denmark)

    Daviðsdóttir, Svava; Petit, Jean-Pierre; Shabadi, Rajashekhara;

    2015-01-01

    measurements showed a maximum UV-light absorption by titanium dioxide occurring slightly prior to the energy of the maximum photocurrent. The photocurrent of titanium dioxide decreases with increasing thickness of the aluminum oxide interface layer. Aluminum oxide acts as an insulator; disfavoring the electron...

  3. Epitaxial growth and oxidation of thin gold and ruthenium films

    OpenAIRE

    Langsdorf, Daniel Wolfgang

    2015-01-01

    In the present work the growth and redox behavior of thin Au islands or films with various thicknesses (two to five layers) deposited on Ru(0001) was studied by x-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM). By exposure of atomic oxygen at room temperature, small oxidized gold nanoparticles are formed by the fragmentation of the metallic gold islands or film. For smaller exposures of atomic oxygen (gleich vier Goldlagen) deutlich weniger Partikel geformt werde...

  4. Graphene Oxide Reinforced Polycarbonate Nanocomposite Films with Antibacterial Properties

    OpenAIRE

    Mahendran, R.; D. Sridharan; Santhakumar, K.; Selvakumar, T. A.; Rajasekar, P.; Jang, J. -H.

    2016-01-01

    The incorporation of carbonaceous nanofillers into polymers can result in significant materials with improved physicochemical properties and novel composite functionalities. In this study, we have fabricated antibacterial, lightweight, transparent, and flexible graphene oxide (GO) reinforced polycarbonate thin films by a facile and low-cost methodology. Solution blending is employed to get a homogeneous mixture of PC-GO composites at various loading of GO, and the thin films are prepared by d...

  5. Nanostructured zinc oxide films for application in photovoltaics

    OpenAIRE

    Sarkar, Kuhu

    2014-01-01

    In this thesis, custom-tailored nanostructured morphologies of zinc oxide and zinc titanate are investigated. A solution-based route is used for the synthesis of these nanostructures, which involves diblock copolymers as structure-directing templates in combination with sol-gel chemistry. This process provides tuneability to the length scales of the nanostructures, which are deposited as thin films using different techniques. The aim is to utilize the thin films for photovoltaic applications....

  6. Deposition of Aluminium Oxide Films by Pulsed Reactive Sputtering

    Institute of Scientific and Technical Information of China (English)

    Xinhui MAO; Bingchu CAI; Maosong WU; Guoping CHEN

    2003-01-01

    Pulsed reactive sputtering is a novel process used to deposit some compound films, which are not deposited by traditional D.C. reactive sputtering easily. In this paper some experimental results about the deposition of Al oxide films by pulsed reactive sputtering are presented. The hysteresis phenomenon of the sputtering voltage and deposition rate with the change of oxygen flow during sputtering process are discussed.

  7. Oxidation Behavior of In-Flight Molten Aluminum Droplets in the Twin-Wire Electric Arc Thermal Spray Process

    Energy Technology Data Exchange (ETDEWEB)

    Donna Post Guillen; Brian G. Williams

    2005-05-01

    This paper examines the in-flight oxidation of molten aluminum sprayed in air using the twin-wire electric arc (TWEA) thermal spray process. The oxidation reaction of aluminum in air is highly exothermic and is represented by a heat generation term in the energy balance. Aerodynamic shear at the droplet surface enhances the amount of in-flight oxidation by: (1) promoting entrainment and mixing of the surface oxides within the droplet, and (2) causing a continuous heat generation effect that increases droplet temperature over that of a droplet without internal circulation. This continual source of heat input keeps the droplets in a liquid state during flight. A linear rate law based on the Mott-Cabrera theory was used to estimate the growth of the surface oxide layer formed during droplet flight. The calculated oxide volume fraction of an average droplet at impact agrees well with the experimentally determined oxide content for a typical TWEA-sprayed aluminum coating, which ranges from 3.3 to 12.7%. An explanation is provided for the elevated, nearly constant surface temperature (~ 2000 oC) of the droplets during flight to the substrate and shows that the majority of oxide content in the coating is produced during flight, rather than after deposition.

  8. The physical and chemical properties of ultrathin oxide films.

    Science.gov (United States)

    Street, S C; Xu, C; Goodman, D W

    1997-01-01

    Thin oxide films (from one to tens of monolayers) of SiO2, MgO, NiO, Al2O3, FexOy, and TiO2 supported on refractory metal substrates have been prepared by depositing the oxide metal precursor in a background of oxygen (ca 1 x 10(-5) Torr). The thinness of these oxide samples facilitates investigation by an array of surface techniques, many of which are precluded when applied to the corresponding bulk oxide. Layered and mixed binary oxides have been prepared by sequential synthesis of dissimilar oxide layers or co-deposition of two different oxides. Recent work has shown that the underlying oxide substrate can markedly influence the electronic and chemical properties of the overlayer oxide. The structural, electronic, and chemical properties of these ultrathin oxide films have been probed using Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (ELS), ion-scattering spectroscopy (ISS), high-resolution electron energy loss spectroscopy (HREELS), infrared reflectance absorption spectroscopy (IRAS), temperature-programmed desorption (TPD), scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS).

  9. Ultraflat indium tin oxide films prepared by ion beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Han Younggun; Kim, Donghwan; Cho, Jun-Sik; Koh, Seok-Keun

    2005-02-14

    Indium tin oxide (ITO) films with a smooth surface (root-mean-square roughness; R{sub rms}=0.40 nm) were made using a combination of the deposition conditions in the ion beam-sputtering method. Sheet resistance was 13.8 {omega}/sq for a 150-nm-thick film grown at 150 deg. C. Oxygen was fed into the growth chamber during film growth up to 15 nm, after which, the oxygen was turned off throughout the rest of the deposition. The surface of the films became smooth with the addition of ambient oxygen but electrical resistance increased. In films grown at 150 deg. C with no oxygen present, a rough surface (R{sub rms}=2.1 nm) and low sheet resistance (14.4 {omega}/sq) were observed. A flat surface (R{sub rms}=0.5 nm) with high sheet resistance (41 {omega}/sq) was obtained in the films grown with ambient oxygen throughout the film growth. Surface morphology and microstructure of the films were determined by the deposition conditions at the beginning of the growth. Therefore, fabrication of ITO films with a smooth surface and high electrical conductivity was possible by combining experimental conditions.

  10. Investigation of solution-processed bismuth-niobium-oxide films

    International Nuclear Information System (INIS)

    The characteristics of bismuth-niobium-oxide (BNO) films prepared using a solution process were investigated. The BNO film annealed at 550 °C involving three phases: an amorphous phase, Bi3NbO7 fluorite microcrystals, and Nb-rich cubic pyrochlore microcrystals. The cubic pyrochlore structure, which was the main phase in this film, has not previously been reported in BNO films. The relative dielectric constant of the BNO film was approximately 140, which is much higher than that of a corresponding film prepared using a conventional vacuum sputtering process. Notably, the cubic pyrochlore microcrystals disappeared with increasing annealing temperature and were replaced with triclinic β-BiNbO4 crystals at 590 °C. The relative dielectric constant also decreased with increasing annealing temperature. Therefore, the high relative dielectric constant of the BNO film annealed at 550 °C is thought to result from the BNO cubic pyrochlore structure. In addition, the BNO films annealed at 500 °C contained approximately 6.5 atm. % carbon, which was lost at approximately 550 °C. This result suggests that the carbon in the BNO film played an important role in the formation of the cubic pyrochlore structure.

  11. Modelo predictivo del espesor de la capa de óxido y microdureza en aluminio Al3003-B14 y Al6063-T6 anodizado usando análisis multifactorial Oxide film thickness and microhardness prediction model of Al3003-B14 and Al6063-T6 anodized aluminum using multifactorial analysis

    Directory of Open Access Journals (Sweden)

    Leonardo Eladio Vergara Guillén

    2011-08-01

    Full Text Available En esta investigación se modela a partir de los parámetros del proceso el espesor de la capa de óxido y la microdureza de los aluminios Al3003 y Al6063 anodizados. Para ello se realizaron estudios de la microdureza y espesor de capa de la superficie anodizada, utilizando técnicas de análisis multifactorial y diseño robusto. Se establecieron los siguientes niveles de los parámetros del proceso: temperatura [15 °C, 25 °C], tiempo [30 min; 60 min], concentración de electrolito [1,2 M; 2 M], densidad de corriente [1 Amp/dm²; 3 Amp/dm²], aluminio [Al3003,Al6063] y como variable de ruido, la deformación plástica [0%, 10%, 20%, 30%]. Se propuso un diseño fraccionado 2(7-2 mixto, con el cual se efectuó un total de 48 pruebas usando soluciones electrolíticas de ácido sulfúrico. La medición de microdureza se realizó con un indentador Vickers con carga de 400 g; el espesor de la capa de óxido se captó mediante microscopia electrónica. A los resultados se les realizó un análisis de varianza (ANOVA, para determinar los factores significativos y la robustez de los efectos. Se encontraron resultados de microdureza [HV] [85,74-308,87]; y espesor de óxido [µm] [12,82- 94,69]. Finalmente, se muestran los modelos de predicción de cada una de las respuestas en función de los factores significativos estas ecuaciones permitirán seleccionar la microdureza y espesor de la capa de óxido para cumplir los requerimientos de un producto particular mediante una selección apropiada de los parámetros del proceso.In this research, the thickness of the oxide layer and the microhardness of anodized aluminum Al3003 and Al6063 are modeled based on process parameters. To this end, studies of the microhardness and the thickness layer of the anodized surface were made, via techniques of multifactorial analysis and robust design. The following levels of the process parameters were established: temperature [15°C, 25°C], time [30min; 60min

  12. Graphene Oxide Reinforced Polycarbonate Nanocomposite Films with Antibacterial Properties

    Directory of Open Access Journals (Sweden)

    R. Mahendran

    2016-01-01

    Full Text Available The incorporation of carbonaceous nanofillers into polymers can result in significant materials with improved physicochemical properties and novel composite functionalities. In this study, we have fabricated antibacterial, lightweight, transparent, and flexible graphene oxide (GO reinforced polycarbonate thin films by a facile and low-cost methodology. Solution blending is employed to get a homogeneous mixture of PC-GO composites at various loading of GO, and the thin films are prepared by dry-wet phase inversion technique. Thermal studies and micrographs of the films revealed the incorporation of GO in PC matrix. Microstructure of the thin films showed the homogeneous dispersion of GO at micro- and nanoscales; however, at higher loading of GO (0.7%, significant agglomeration is observed. More importantly, PC-GO composite films exhibited excellent antibacterial activities against E. coli and S. aureus, owing to the antibacterial nature of GO nanoparticles.

  13. The growth of thin film epitaxial oxide-metal heterostructures

    CERN Document Server

    Wang, C

    1998-01-01

    films with lowest IR emissivity are those made from the purest targets despite their having comparable roughnesses to films from lower purity targets. The lowest emissivity achieved was in the range of 1.64% to 1.72% measured at 3.8 mu m for 1.5 to 1.8 mu m thick films. Modifications to standard idealized Drude theory have been made which, in a phenomenological way, take account of imperfections in the sputtered Al film, oxidation state and roughness. in electric properties of the Nb film and the reduction in crystalline quality of the MgO layer. The reduction of transition temperature to the superconducting state, Tc, and the similarly systematic increase in the Nb lattice parameter were observed consistent with oxygen content data reported in the literature, as the Nb became heavily oxidized. Examination of the surface of clean and oxidized Nb by atomic force microscopy, and deposition of MgO in UHV onto a previously oxidized Nb surface, suggested that the decrease in crystalline quality of the MgO can be a...

  14. Oxidation and growth of Mg thin films on Ru(001)

    Science.gov (United States)

    Huang, H. H.; Jiang, X.; Siew, H. L.; Chin, W. S.; Sim, W. S.; Xu, G. Q.

    1999-08-01

    The oxidation and growth of ultra-thin Mg films on a Ru(001) substrate have been studied using X-ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS) in the temperature range of 300-1500 K. Our results suggest that the growth of Mg thin films follows a layer-by-layer mode. Upon oxygen adsorption at 300 K, two O 1s peaks were detected on the Mg film. The peak at 532.2-532.6 eV could be attributed to either dioxygen or partially reduced species (O δ-, δfilm to 800 K causes the conversion of the dioxygen or partially reduced species to the oxide state. Thermal desorption peaks of MgO were directly detected at 1000-1127 and 1350-1380 K, respectively. However, initial evaporation of Mg atoms onto an oxygen pre-adsorbed surface yields a fully oxidized MgO. Further Mg deposition results in the formation of a partially oxidized film with the observation of an O 1s peak at 532.2 eV.

  15. Spark counting technique with an aluminium oxide film

    International Nuclear Information System (INIS)

    Automatic spark counting of etch-pits on a polycarbonate film produced by nuclear fission fragments is now used for neutron monitoring in several countries. A method was developed using an aluminium oxide film instead of a polycarbonate as the neutron detector. Aluminium oxide films were prepared as follows: A cleaned aluminium plate as an anode and a nickel plate as a cathode were immersed in dilute sulfuric acid solution and electric current flowed between the electrodes at 12degC for 10-30 minutes. Electric current density was about 10 mA/cm2. The aluminium plate was then kept in boiling water for 10-30 minutes for sealing. The thickness of the aluminium oxide layer formed was about 1μm. The aluminium plate attached to a plate of suitable fissionable material, such as uranium or thorium, was irradiated with neutrons and set in a usual spark counter for fission track counting. One electrode was the aluminium plate and the other was an aluminized polyester sheet. Sparked pulses were counted with a usual scaler. The advantage of using spark counting with an aluminium oxide film for neutron monitoring is rapid measurement of neutron exposure, since chemical etching which is indispensable for spark counting with a polycarbonate detector film, is not needed. (H.K.)

  16. Oxidative stress in blood and testicle of rat following intraperitoneal administration of aluminum and indium.

    Science.gov (United States)

    Maghraoui, S; Clichici, Simona; Ayadi, A; Login, C; Moldovan, R; Daicoviciu, D; Decea, N; Mureşan, A; Tekaya, L

    2014-03-01

    Aluminum (Al) and indium (In) have embryotoxic, neurotoxic and genotoxic effects, oxidative stress being one of the possible mechanisms involved in their cytotoxicity. We have recently demonstrated that indium intraperitoneal (ip) administration induced histological disorganization of testicular tissue. In the present research we aimed at investigating the effect of Al and In ip administration on systemic and testicular oxidative stress status. Studies were performed on Wistar rats ip injected with Al, In or physiological solution for two weeks. Our results showed that In significantly decreased the absolute weight of testicles. Measurements of lactate dehydrogenase (LDH) and paraoxonase (PON) activities showed that In induced a significant augmentation in the first parameter but no changes were observed in the second. Both Al and In caused oxidative stress in testicles by increasing malondialdehyde (MDA) and protein carbonyls (PC) production. Concomitantly, thiol group (-SH) and glutathione (GSH) level were enhanced in the testicles. In the blood, while concentrations of MDA was not changed, those of GSH was significantly decreased in the Al and In groups. Our results indicated that Al and In cause oxidative stress both in blood and testicles but In has cytotoxic effect as well as negative impact on testicle weights. These findings could explain the testicular histological alterations previously described after In ip administration.

  17. Interactions of aluminum with biochars and oxidized biochars: implications for the biochar aging process.

    Science.gov (United States)

    Qian, Linbo; Chen, Baoliang

    2014-01-15

    Interactions of aluminum with primary and oxidized biochars were compared to understand the changes in the adsorption properties of aged biochars. The structural characteristics of rice straw-derived biochars, before and after oxidation by HNO3/H2SO4, were analyzed by element composition, FTIR, and XPS. The adsorption of Al to primary biochars was dominated by binding to inorganic components (such as silicon particles) and surface complexation of oxygen-containing functional groups via esterification reactions. Oxidization (aging) introduced carboxylic functional groups on biochar surfaces, which served as additional binding sites for Al(3+). At pH 2.5-3.5, the Al(3+) binding was significantly greater on oxidized biochars than primary biochars. After loading with Al, the -COOH groups anchored to biochar surfaces were transformed into COO(-) groups, and the negative surface charge diminished, which indicated that Al(3+) coordinated with COO(-). Biochar is suggested as a potential adsorbent for removing Al from acidic soils. PMID:24364719

  18. Comparison of topotactic fluorination methods for complex oxide films

    Directory of Open Access Journals (Sweden)

    E. J. Moon

    2015-06-01

    Full Text Available We have investigated the synthesis of SrFeO3−αFγ (α and γ ≤ 1 perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO2.5 films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  19. Surface and sub-surface thermal oxidation of thin ruthenium films

    Energy Technology Data Exchange (ETDEWEB)

    Coloma Ribera, R.; Kruijs, R. W. E. van de; Yakshin, A. E.; Bijkerk, F. [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands); Kokke, S.; Zoethout, E. [FOM Dutch Institute for Fundamental Energy Research (DIFFER), P.O. Box 1207, 3430 BE Nieuwegein (Netherlands)

    2014-09-29

    A mixed 2D (film) and 3D (nano-column) growth of ruthenium oxide has been experimentally observed for thermally oxidized polycrystalline ruthenium thin films. Furthermore, in situ x-ray reflectivity upon annealing allowed the detection of 2D film growth as two separate layers consisting of low density and high density oxides. Nano-columns grow at the surface of the low density oxide layer, with the growth rate being limited by diffusion of ruthenium through the formed oxide film. Simultaneously, with the growth of the columns, sub-surface high density oxide continues to grow limited by diffusion of oxygen or ruthenium through the oxide film.

  20. Electrochemical investigations on spray deposited tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, P.S.; Chigare, P.S.; Sadale, S.B.; Mujawar, S.H.; Shinde, P.S. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, Maharashtra (India)

    2007-06-15

    Tin oxide (SnO{sub 2}) thin films were prepared by a simple and inexpensive spray pyrolysis technique from an aqueous solution at various substrate temperatures viz. 300, 400 and 500 C, and their electrochemical studies have been carried out. The thin films have been optically and electrochemically characterized by means of transmittance, cyclic voltammetry and chronoamperometry. The mechanism of reduction and oxidation reactions that took place during the potential cycling is presented. The samples deposited at 500 C exhibit better performance in terms of coloration efficiency, reversibility, contrast ratio and response time. (author)

  1. Sol-gel deposited nickel oxide films for electrochromic applications

    Energy Technology Data Exchange (ETDEWEB)

    Ozkan Zayim, E.; Turhan, I.; Tepehan, F.Z. [Istanbul Technical University, Faculty of Science and Literature, Maslak 34469, Istanbul (Turkey); Ozer, N. [San Francisco State University, School of Engineering, San Francisco, CA 94132 (United States)

    2008-02-15

    The electrochromic (EC) behavior, the microstructure, and the morphology of sol-gel deposited nickel oxide (NiO{sub x}) coatings were investigated. The films were produced by spin and dip-coating techniques on indium tin oxide (ITO)/glass and Corning glass (2947) substrates. The coating solutions were prepared by reacting nickel(II) 2-ethylhexanoate as the precursor, and isopropanol as the solvent. NiO{sub x} was heat treated at 350 C for 1 h. The surface morphology, crystal structure, and EC characteristics of the coatings were investigated by scanning electron microscopy (SEM), electron dispersive spectroscopy (EDS), atomic force spectroscopy (AFM), X-ray diffractometry (XRD), and cyclic voltammetry (CV). SEM and AFM images revealed that the surface morphology and surface characteristics of the spin- and dip-coated films on both types of substrate were different. XRD spectra revealed that both films were amorphous, either on ITO or Corning glass substrates. CV showed a reversible electrochemical insertion or extraction of the K{sup +} ions, cycled in 1 M KOH electrolyte, in both type of film. The crystal structure of the cycled films was found to be XRD amorphous. Spectroelectrochemistry demonstrated that dip-coated films were more stable up to 1000 coloration-bleaching cycles, whereas spin-coated films gradually degraded after 500 cycles. (author)

  2. Properties of thin anodic oxide films on zirconium alloys

    International Nuclear Information System (INIS)

    Thin (0.1-0.2 μm) anodic oxide films were formed on zirconium, Zircaloy-2 and Zr-2.5 wt% Nb alloy specimens and examined by AC impedance spectroscopy (using both metal and aqueous electrolyte contacts), UV/VIS interferometry, and scanning electron microscopy (SEM). The SEM studies showed that the extent of oxide cracking was a function of the particular alloy and the electrolyte in which the oxide was formed. AC impedance spectroscopy showed that with metallic contacts a Young impedance behaviour was observed as a result of local conduction paths in the oxide film, probably resulting from second phase particles. The extent of cracking in the oxide was identified best from SEM and AC impedance measurements in aqueous electrolytes, and did not appear to contribute to the results obtained with metallic contacts. Large discrepancies between the apparent oxide thicknesses measured from AC impedance data obtained from measurements with aqueous electrolyte and liquid metal contacts, respectively, were shown to result from surface roughness and inadequate wetting by the liquid metals. These discrepancies could be eliminated by using evaporated platinum contacts, which also showed evidence for local conduction in the oxides. UV/VIS interferometry results for the oxide refractive indices and oxide thicknesses gave much scatter because of the small number of fringes available for the analysis and the difficulties in establishing the positions of interference minima with the same accuracy as was possible for interference maxima. The use of this combination of techniques still appears to be the best method for investigating the presence of conducting paths in thick porous oxide films on these alloys. Preference should be given to using evaporated rather than liquid metal contacts when studying such oxides. The advantages of easy removal for the liquid metal contacts often, however, outweigh the errors introduced by surface roughness when using them for repetitive measurements

  3. Formation and microstructure of nickel oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Marcius, Marijan [Ruder Boskovic Institute, P.O. Box 180, HR-10002 Zagreb (Croatia); Ristic, Mira, E-mail: ristic@irb.hr [Ruder Boskovic Institute, P.O. Box 180, HR-10002 Zagreb (Croatia); Ivanda, Mile; Music, Svetozar [Ruder Boskovic Institute, P.O. Box 180, HR-10002 Zagreb (Croatia)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer Difference in NiO films formed on Ni plate or glass substrate were found. Black-Right-Pointing-Pointer NiO particle sizes on Ni plate changed from nano to micron dimensions. Black-Right-Pointing-Pointer NiO particle sizes on glass substrate changed from {approx}16 to {approx}27 nm. Black-Right-Pointing-Pointer Raman and UV/Vis/NIR spectra are related to the microstructure of NiO films. - Abstract: The formation and microstructure of NiO films on different substrates were monitored using XRD, Raman, UV/Vis/NIR and FE-SEM/EDS techniques. The formation of NiO films on Ni plates in air atmosphere between 400 and 800 Degree-Sign C was confirmed by XRD and Raman spectroscopy. The origin of Raman bands and corresponding Raman shifts in the samples are discussed. An increase in the size of NiO particles in the films from nano to micro dimensions was demonstrated. A change in the atomic ratio Ni:O with an increase in heating temperature was observed. Polished Ni plates coated with a thin Ni-acetate layer upon heating at high temperatures gave similar NiO microstructures on the surface like in the case of non-treated Ni plates. Glass substrates coated with thin Ni-acetate films upon heating between 400 and 800 Degree-Sign C yielded pseudospherical NiO nanoparticles. The dominant Raman band as an indicator of NiO formation on a glass substrate was shown. The formation of NiO nanoparticles on glass substrates with maximum size distribution from 16 to 27 nm in a broad temperature range from 400 to 800 Degree-Sign C can be explained by the absence of a constant source of metallic nickel which was present in the case of Ni plates.

  4. Preparation of thin hexagonal highly-ordered anodic aluminum oxide (AAO) template onto silicon substrate and growth ZnO nanorod arrays by electrodeposition

    Science.gov (United States)

    Chahrour, Khaled M.; Ahmed, Naser M.; Hashim, M. R.; Elfadill, Nezar G.; Qaeed, M. A.; Bououdina, M.

    2014-12-01

    In this study, anodic aluminum oxide (AAO) templates of Aluminum thin films onto Ti-coated silicon substrates were prepared for growth of nanostructure materials. Hexagonally highly ordered thin AAO templates were fabricated under controllable conditions by using a two-step anodization. The obtained thin AAO templates were approximately 70 nm in pore diameter and 250 nm in length with 110 nm interpore distances within an area of 3 cm2. The difference between first and second anodization was investigated in details by in situ monitoring of current-time curve. A bottom barrier layer of the AAO templates was removed during dropping the voltage in the last period of the anodization process followed by a wet etching using phosphoric acid (5 wt%) for several minutes at ambient temperature. As an application, Zn nanorod arrays embedded in anodic alumina (AAO) template were fabricated by electrodeposition. Oxygen was used to oxidize the electrodeposited Zn nanorods in the AAO template at 700 °C. The morphology, structure and photoluminescence properties of ZnO/AAO assembly were analyzed using Field-emission scanning electron microscope (FESEM), Energy dispersive X-ray spectroscopy (EDX), Atomic force microscope (AFM), X-ray diffraction (XRD) and photoluminescence (PL).

  5. Size effects in epitaxial oxide thin films

    NARCIS (Netherlands)

    Kuiper, Bouwe

    2014-01-01

    The perovskite oxide material class comprises a vast range of interesting physical properties. The common oxygen backbone in such ABO3 perovskites and the similar lattice parameters allow for the creation of epitaxial oxide heterostructures. Materials with different intrinsic properties can be combi

  6. Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Baek, Jonghoon [Department of Electrical and Computer Engineering, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States)]. E-mail: jhoon6@hotmail.com; Ma, James [Materials Science and Engineering Program, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Becker, Michael F. [Department of Electrical and Computer Engineering, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Keto, John W. [Department of Physics, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Kovar, Desiderio [Department of Mechanical Engineering, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States)

    2007-06-25

    Aluminum nitride (AlN) films were deposited using pulsed laser deposition (PLD) onto sapphire (0001) substrates with varying processing conditions (temperature, pressure, and laser fluence). We have studied the dependence of optical properties, structural properties and their correlations for these AlN films. The optical transmission spectra of the produced films were measured, and a numerical procedure was applied to accurately determine the optical constants for films of non-uniform thickness. The microstructure and texture of the films were studied using various X-ray diffraction techniques. The real part of the refractive index was found to not vary significantly with processing parameters, but absorption was found to be strongly dependent on the deposition temperature and the nitrogen pressure in the deposition chamber. We report that low optical absorption, textured polycrystalline AlN films can be produced by PLD on sapphire substrates at both low and high laser fluence using a background nitrogen pressure of 6.0 x 10{sup -2} Pa (4.5 x 10{sup -4} Torr) of 99.9% purity.

  7. Highly Ordered Zinc Oxide Nanotubules Synthesized within the Anodic Aluminum Oxide Template

    Institute of Scientific and Technical Information of China (English)

    WANG Zhen; LI HuLin

    2001-01-01

    @@ Zinc oxide (ZnO) is a wide-band-gap semiconductor, which has a broad range of applications, e.g., in pigment, rubber additives, gas sensors, varistors and transducers1. It has recently been demonstrated that nanophase zinc oxide can be used in photocells of the Gatzel type2, which results in improved current generation efficiency. The properties of high aspect ratios and small sizes of zinc oxide nanotubules or nanowires are expected to improve the luminescence efficiency of the electro-optical devices and the sensitivity of the chemical sensors3.

  8. Highly Ordered Zinc Oxide Nanotubules Synthesized within the Anodic Aluminum Oxide Template

    Institute of Scientific and Technical Information of China (English)

    WANG; Zhen

    2001-01-01

    Zinc oxide (ZnO) is a wide-band-gap semiconductor, which has a broad range of applications, e.g., in pigment, rubber additives, gas sensors, varistors and transducers1. It has recently been demonstrated that nanophase zinc oxide can be used in photocells of the Gatzel type2, which results in improved current generation efficiency. The properties of high aspect ratios and small sizes of zinc oxide nanotubules or nanowires are expected to improve the luminescence efficiency of the electro-optical devices and the sensitivity of the chemical sensors3.  ……

  9. Chemical Bath Deposition of Aluminum Oxide Buffer on Curved Surfaces for Growing Aligned Carbon Nanotube Arrays.

    Science.gov (United States)

    Wang, Haitao; Na, Chongzheng

    2015-07-01

    Direct growth of vertically aligned carbon nanotube (CNT) arrays on substrates requires the deposition of an aluminum oxide buffer (AOB) layer to prevent the diffusion and coalescence of catalyst nanoparticles. Although AOB layers can be readily created on flat substrates using a variety of physical and chemical methods, the preparation of AOB layers on substrates with highly curved surfaces remains challenging. Here, we report a new solution-based method for preparing uniform layers of AOB on highly curved surfaces by the chemical bath deposition of basic aluminum sulfate and annealing. We show that the thickness of AOB layer can be increased by extending the immersion time of a substrate in the chemical bath, following the classical Johnson-Mehl-Avrami-Kolmogorov crystallization kinetics. The increase of AOB thickness in turn leads to the increase of CNT length and the reduction of CNT curviness. Using this method, we have successfully synthesized dense aligned CNT arrays of micrometers in length on substrates with highly curved surfaces including glass fibers, stainless steel mesh, and porous ceramic foam. PMID:26053766

  10. Formation of unidirectional nanoporous structures in thickly anodized aluminum oxide layer

    Institute of Scientific and Technical Information of China (English)

    Hyun-Chae NA; Taek-Jin SUNG; Seok-Heon YOON; Seung-Kyoun HYUN; Mok-Soon KIM; Young-Gi LEE; Sang-Hyun SHIN; Seok-Moon CHOI; Sung YI

    2009-01-01

    A series of anodic aluminum oxide(AAO) was grown on the commercially pure 1050 aluminum sheet by controlling electrolyte temperature (2-15 ℃) and anodizing time (0.5-6 h), using a fixed applied current density of 3 A/dm2 in diluted sulfuric acid electrolyte. A crack-free thick AAO with the thickness of 105-120 ìm and containing unidirectional nano sized pores (average pore diameter of 5-7 nm) is successfully achieved in the specimens anodized for 2 h, irrespective of electrolyte temperature. When anodizing time reaches 6 h, very thick AAO with the thickness of 230-284 ìm is grown, and average diameter of unidirectional pores is in the range of 6-24 nm. The higher values in both the AAO thickness and pore diameter are attained for the specimens anodized at higher temperatures of 10-15 ℃. A crack is observed to exist in the AAO after anodizing up to 4 h and more. A higher fraction (more than 9%) of the crack is shown in the specimens anodized at higher temperatures of 10-15 ℃ for 6 h and a considerable amount of giant cracks are contained.

  11. High-Quality, Ultraconformal Aluminum-Doped Zinc Oxide Nanoplasmonic and Hyperbolic Metamaterials.

    Science.gov (United States)

    Riley, Conor T; Smalley, Joseph S T; Post, Kirk W; Basov, Dimitri N; Fainman, Yeshaiahu; Wang, Deli; Liu, Zhaowei; Sirbuly, Donald J

    2016-02-17

    Aluminum-doped zinc oxide (AZO) is a tunable low-loss plasmonic material capable of supporting dopant concentrations high enough to operate at telecommunication wavelengths. Due to its ultrahigh conformality and compatibility with semiconductor processing, atomic layer deposition (ALD) is a powerful tool for many plasmonic applications. However, despite many attempts, high-quality AZO with a plasma frequency below 1550 nm has not yet been realized by ALD. Here a simple procedure is devised to tune the optical constants of AZO and enable plasmonic activity at 1550 nm with low loss. The highly conformal nature of ALD is also exploited to coat silicon nanopillars to create localized surface plasmon resonances that are tunable by adjusting the aluminum concentration, thermal conditions, and the use of a ZnO buffer layer. The high-quality AZO is then used to make a layered AZO/ZnO structure that displays negative refraction in the telecommunication wavelength region due to hyperbolic dispersion. Finally, a novel synthetic scheme is demonstrated to create AZO embedded nanowires in ZnO, which also exhibits hyperbolic dispersion.

  12. Tungsten oxide nanowire synthesis from amorphous-like tungsten films.

    Science.gov (United States)

    Seelaboyina, Raghunandan

    2016-03-18

    A synthesis technique which can lead to direct integration of tungsten oxide nanowires onto silicon chips is essential for preparing various devices. The conversion of amorphous tungsten films deposited on silicon chips by pulsed layer deposition to nanowires by annealing is an apt method in that direction. This perspective discusses the ingenious features of the technique reported by Dellasega et al on the various aspects of tungsten oxide nanowire synthesis. PMID:26871521

  13. Influence of the atmospheric species water, oxygen, nitrogen and carbon dioxide on the degradation of aluminum doped zinc oxide layers

    NARCIS (Netherlands)

    Theelen, M.; Dasgupta, S.; Vroon, Z.; Kniknie, B.; Barreau, N.; Berkum, J. van; Zeman, M.

    2014-01-01

    Aluminum doped zinc oxide (ZnO:Al) layers were exposed to the atmospheric gases carbon dioxide (CO2), oxygen (O2), nitrogen (N 2) and air as well as liquid H2O purged with these gases, in order to investigate the chemical degradation behavior of these layers. The samples were analyzed by electrical,

  14. Synthesis of ordered Sinanowire arrays in porous anodic aluminum oxide templates

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Highly ordered polycrystalline Si nanowire arrays were synthesized in porous anodic aluminum oxide (AAO) templates by the chemical vapor deposition (CVD)method. The morphological structure, the crystal character of Si nanowire arrays and the individual nanowire were analyzed by the transmission electron microscopy (TEM),scanning electron microscopy (SEM), atom force microscopy (AFM) and the X-ray diffraction spectrum (XRD), respectively. It is shown that most fabricated silicon nanowires (SiNWs) tend to be assembled parallelly in bundles and constructed with highly orientated arrays. This method provides a simple and low cost fabricating craftwork and the diameters and lengths of SiNWs can be controlled, the large area Si nanowire arrays can be achieved easily under such a way.The curling and twisting SiNWs are fewer than those by other synthesis methods.

  15. Effect of magnesium in aluminum alloys on characteristics of microarc oxidation coatings

    Institute of Scientific and Technical Information of China (English)

    LIU Yao-hui; LI Song; YU Si-rong; ZHU Xian-yong; XU Bai-ming

    2006-01-01

    Microarc oxidation(MAO) coatings were prepared on the surface of aluminum alloys with different contents of magnesium. The morphologies and surface roughness of the coatings were characterized by Confocal laser scanning microscopy(CLSM). Phase and chemical composition of the MAO coatings were analyzed by X-ray diffractometry(XRD) and X-ray photoelectron spectroscopy(XPS). The experimental results show that the coatings formed on different substrates have two-layer morphologies and are mainly composed of Al2O3 and Al-Si-O phases. In addition, the content of Al2O3 increases with increasing the content of magnesium. XPS results prove that magnesium from substrate indeed participates in the MAO process and is incorporated into the coating in the form of MgO. The coating formed on Al-3Mg substrate has the smallest mass loss and the lowest friction coefficient of 0.17-0.19.

  16. Taguchi Optimization for Combustion Synthesis of Aluminum Oxide Nano-particles

    Institute of Scientific and Technical Information of China (English)

    EDRISSI Mohammad; NOROUZBEIGI Reza

    2008-01-01

    Nano-structured aluminum oxide powders were prepared by a combustion synthesis method utilizing serine as a new fuel. The product was sonicated to obtain nano powders. A Taguchi L-4 statistical design of combustion syn- thesis was utilized to optimize the production of γ-alumina powder. The product was characterized by XRD, BET, SEM, EDX and LLS. Nano crystalline γ-alumina with crystal sizes between 4.26 and 5.47 nm and α-Al2O3 powders with crystal sizes 24.51 and 28.62 nm were obtained by the combustion synthesis. The specific surface area was measured by a BET method to be 75.21 m2/g. The average particle size after sonication of product, observed by LLS, was 79.32 nm.

  17. Photoluminescence and Raman studies in swift heavy ion irradiated polycrystalline aluminum oxide

    Indian Academy of Sciences (India)

    K R Nagabhushana; B N Lakshminarasappa; Fouran Singh

    2009-10-01

    Polycrystalline aluminum oxide is synthesized by combustion technique and XRD studies of the sample revealed the -phase. The synthesized sample is irradiated with 120 MeV swift Au9+ ions for the fluence in the range from 1 × 1011 to 1 × 1013 ions cm-2. A broad photoluminescence (PL) emission with peak at ∼447 nm and two sharp emissions with peak at ∼ 679 and ∼ 695 nm are observed in pristine when sample was excited with 326 nm. However, in the irradiated samples the PL intensity at ∼ 447, 679 and 695 nm decreases with increase in ion fluence. The -Al2O3 gives rise to seven Raman modes with Raman intensity with peaks at ∼ 253, 396, 417, 546, 630, 842, 867 cm-1 observed in pristine. The intensity of these modes decreases with increase in ion fluence. However, the Raman modes observed at lower fluences are found to disappear at higher fluence.

  18. Microstructures and Composition of Ceramic Coatings on Aluminum Produced by Micro-Arc Oxidation

    Institute of Scientific and Technical Information of China (English)

    SHEN De-jiu; WANG Yu-lin; GU Wei-chao; XING Guang-zhong

    2004-01-01

    Microstructures and phase composition of the ceramic coatings formed on pure aluminum by heteropolar pulsed current ceramic synthesizing system for different periods were investigated by X-ray diffraction (XRD) and scanning electronic microscopy (SEM). Results show that the amount of the discharge channels in the ceramic coating sminish while the aperture largen in the micro-arc oxidation process, and the surface of the ceramic coatingmelted and solidified in the process.XRD studies of ceramic coatings deposited for different time show that these coatings consist mainly of α-Al2 O3, γ-Al2 O3 , θ-Al2 O3 and a little amorphous phase, and phase composition of compact and porous ceramic coatings don' t have much difference but have a little change of the content of α-Al2 O3 and amorphous phase.

  19. Characterization of Anodic Aluminum Oxide Membrane with Variation of Crystallizing Temperature for pH Sensor.

    Science.gov (United States)

    Yeo, Jin-Ho; Lee, Sung-Gap; Jo, Ye-Won; Jung, Hye-Rin

    2015-11-01

    We fabricated electrolyte-dielectric-metal (EDM) device incorporating a high-k Al2O3 sensing membrane from a porous anodic aluminum oxide (AAO) using a two step anodizing process for pH sensors. In order to change the properties of the AAO template, the crystallizing temperature was varied from 400 degrees C to 700 degrees C over 2 hours. The structural properties were observed by field emission scanning electron microscopy (FE-SEM). The pH sensitivity increased with an increase in the crystallizing temperature from 400 degrees C to 600 degrees C. However at 700 degrees C, deformation occurred. The porous AAO sensor with a crystallizing temperature of 600 degrees C displayed the good sensitivity and long-term stability and the values were 55.7 mV/pH and 0.16 mV/h, respectively. PMID:26726567

  20. Contribution of Iron and Aluminum Oxides to Electrokinetic Characteristics of Variable Charge Soils in Relation to Surface Charge

    Institute of Scientific and Technical Information of China (English)

    ZHANGHONG; ZHANGXIAO-NIAN

    1992-01-01

    The contribution of iron and aluminum oxides to electrokinetic characteristics of variable charge soils was studied through determination of electrophoretic mobilities of the red soils treated with either removal of iron oxides or coating of aluminum oxides,and of those deferrated under natural conditions.After removal of the iron oxides,zeta potentials of the latosol and the red earth decreased obviously with a shift of IEP to a lower pH,from 6.4 to 5.3 and 4.1 to 2.4 for the former and the latter,respectively,and the electrokinetic change for the latosol was greater than for the red earth.Zeta potentials of the kaolinite sample increased markedly after coated with iron oxides.The striking effect of iron oxides on electrokinetix properties of the soils was also demonstrated by the electrokinetic differences between the samples from the red and white zones of a plinthitic horizon formed naturally,and between the samples from the gley and bottom horizons of a paddy soil derived from a red earth.The coatings of aluminum oxides on the latosol and the yellow earth made their zeta potentials rise pronouncedly and their IEFs move toward higher pHs,from 6.2 to 6.8 and 4.3 to 5.3 for the former and the latter,respectively.The samples with different particle sizes also exhibited some electrokinetic variation.The experiment showed that the effects of iron and aluminum oxides were closely related to the pH and type of the soils.

  1. Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Dazheng; Zhang, Chunfu, E-mail: cfzhang@xidian.edu.cn; Wang, Zhizhe; Zhang, Jincheng; Tang, Shi; Wei, Wei; Sun, Li; Hao, Yue, E-mail: yhao@xidian.edu.cn [State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, No. 2 South Taibai Road, Xi' an 710071 (China)

    2014-06-16

    Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C{sub 61} butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150 °C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100 °C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightly improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.

  2. Copper-aluminum oxide catalysts for total oxidation of toluene synthesized by thermal decomposition of co-precipitated precursors

    Energy Technology Data Exchange (ETDEWEB)

    Białas, Anna [Faculty of Chemistry, Jagiellonian University, Ingardena 3, 30-060 Kraków (Poland); Kuśtrowski, Piotr, E-mail: kustrows@chemia.uj.edu.pl [Faculty of Chemistry, Jagiellonian University, Ingardena 3, 30-060 Kraków (Poland); Dudek, Barbara; Piwowarska, Zofia; Wach, Anna [Faculty of Chemistry, Jagiellonian University, Ingardena 3, 30-060 Kraków (Poland); Michalik, Marek [Institute of Geological Sciences, Jagiellonian University, Oleandry 2a, 30-063 Kraków (Poland); Kozak, Marek [Division of Petroleum Processing, Oil and Gas Institute, Łukasiewicza 1, 31-429 Kraków (Poland)

    2014-08-20

    Highlights: • Cu–Al oxides obtained by coprecipitation are active catalysts in toluene combustion. • Advantage of the catalyst is low copper content and alkali-free precipitating agent. • The stable oxide form built of CuO and CuAl{sub 2}O{sub 4} is attained at 900 °C. • The optimum atomic Cu:Al ratio, ensuring maximum toluene conversion, is about 0.6. • The most active sample contains small CuO crystallites dispersed on the surface. - Abstract: Copper–aluminum containing precursors with various Cu/Al molar ratios (from 0.32–1.28) were prepared by co-precipitation in the presence of ammonium carbonate. The thermal stability of the obtained materials was investigated by thermal analysis, which revealed three crucial decomposition steps, finally resulting in the formation of mixed Cu–Al oxides. The changes in structure and texture of the samples at each decomposition step were examined by X-ray diffraction (XRD), diffuse reflectance UV–vis spectroscopy (UV–vis-DRS) and low temperature sorption of nitrogen. It was found that the entire removal of structural carbonates requires a calcination temperature as high as 900 °C. The samples after thermal treatment at this temperature varied in the phase composition of the bulk (determined by XRD) as well as of the surface (determined by X-ray photoelectron spectroscopy). All samples contained the CuAl{sub 2}O{sub 4} phase. Furthermore, an increase in Cu content led to the appearance of an increasing amount of CuO. Copper oxide in the form of relatively small crystallites turned out to be the catalytically active phase in the total oxidation of toluene.

  3. Oxide and proton conductivity in aluminum-doped tricalcium oxy-silicate

    Energy Technology Data Exchange (ETDEWEB)

    Porras-Vazquez, J.M.; De la Torre, A.G.; Losilla, E.R.; Aranda, M.A.G. [Dept. Quimica Inorganica, Cristalografia y Mineralogia, Universidad de Malaga, Campus Teatinos, 29071-Malaga (Spain)

    2007-06-15

    Aluminum doping in tricalcium silicate, Ca{sub 3}(SiO{sub 4})O, has been studied by high-resolution laboratory X-ray powder diffraction and the Rietveld method. Two nominal series have been designed and studied. Oxygen-fixed Ca{sub 3-x/2}Al{sub x/2}(Si{sub 1-x/2}Al{sub x/2}O{sub 4})O series has been prepared as single-phase up to x = 0.03. However, oxygen-variable Ca{sub 3}(Si{sub 1-x}Al{sub x}O{sub 4})O{sub 1-x/2}{open_square}{sub x/2} series has not been stabilized for any composition. The samples show oxide anion conductivity with a small p-type electronic contribution under oxidizing conditions. Typical total conductivities for these solids are 10{sup -} {sup 5}-10{sup -} {sup 4}S cm{sup -} {sup 1} at 1100 K. The oxide ion transference numbers are very high, {proportional_to} 0.98, under reducing conditions, i.e. dry 5%H{sub 2}-N{sub 2}/air gradient. The oxide ion transference numbers are slightly lower, {proportional_to} 0.91 under oxidizing conditions, i.e. dry O{sub 2}/air gradient. These compounds display a very important proton contribution to the overall conductivities under humidified atmospheres. The proton transference number ranges between 0.72 and 0.55 at 873 and 1023 K, respectively. (author)

  4. Thin films of perovskite-type complex oxides

    Directory of Open Access Journals (Sweden)

    Hanns-Ulrich Habermeier

    2007-10-01

    Full Text Available Complex oxides represent a class of materials with a plethora of fascinating, intrinsic physical functionalities. The intriguing interplay of charge, spin, and orbital ordering in these systems superimposed by lattice effects opens a scientifically rewarding playground for both fundamental and application-oriented research. In particular, the possibility of externally modifying the properties of thin-film complex oxides by epitaxial strain or artificial boundaries, and thus potentially generating novel properties at the interfaces between films, opens a new perspective. Here, the development of physical vapor deposition based preparation technologies for complex oxide thin films is reviewed, with examples taken from current research in high-temperature superconducting cuprates, magnetically ordered manganites, and Na–cobaltates. It covers the main trends of in situ process and growth control to fabricate single-crystal, single-layer thin films, heterostructures, and superlattices. Furthermore, using the combination of ferromagnetic and superconducting oxides as a case study, the emerging field of engineering the electronic structure at the interface, and thus design of new functionalities, is highlighted.

  5. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  6. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  7. Multiferroic oxide thin films and heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Chengliang, E-mail: cllu@mail.hust.edu.cn, E-mail: Tao.Wu@kaust.edu.sa [School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China); Hu, Weijin; Wu, Tom, E-mail: cllu@mail.hust.edu.cn, E-mail: Tao.Wu@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Tian, Yufeng [School of Physics, Shandong University, Jinan 250100 (China)

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  8. Gating of Permanent Molds for ALuminum Casting

    Energy Technology Data Exchange (ETDEWEB)

    David Schwam; John F. Wallace; Tom Engle; Qingming Chang

    2004-03-30

    This report summarizes a two-year project, DE-FC07-01ID13983 that concerns the gating of aluminum castings in permanent molds. The main goal of the project is to improve the quality of aluminum castings produced in permanent molds. The approach taken was determine how the vertical type gating systems used for permanent mold castings can be designed to fill the mold cavity with a minimum of damage to the quality of the resulting casting. It is evident that somewhat different systems are preferred for different shapes and sizes of aluminum castings. The main problems caused by improper gating are entrained aluminum oxide films and entrapped gas. The project highlights the characteristic features of gating systems used in permanent mold aluminum foundries and recommends gating procedures designed to avoid common defects. The study also provides direct evidence on the filling pattern and heat flow behavior in permanent mold castings.

  9. Tandem organic light-emitting diode with a molybdenum tri-oxide thin film interconnector layer

    Institute of Scientific and Technical Information of China (English)

    Lu Fei-Ping; Wang Qian; Zhou Xiang

    2013-01-01

    A 10-nm-thick molybdenum tri-oxide (MoO3) thin film was used as the interconnector layer in tandem organic lightemitting devices (OLEDs).The tandem OLEDs with two identical emissive units consisting of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB) / tris(8-hydroxyquinoline) aluminum (Alq3) exhibited current efficiency-current density characteristics superior to the conventional single-unit devices.At 20 mA/cm2,the current efficiency of the tandem OLEDs using the interconnector layers of MoO3 thin film was about 4.0 cd/A,which is about twice that of the corresponding conventional single-unit device (1.8 cd/A).The tandem OLED showed a higher power efficiency than the conventional single-unit device for luminance over 1200 cd/m2.The experimental results demonstrated that a MoO3 thin film with a proper thickness can be used as an effective interconnector layer in tandem OLEDs.Such an interconnector layer can be easily fabricated by simple thermal evaporation,greatly simplifying the device processing and fabrication processes required by previously reported interconnector layers.A possible explanation was proposed for the carrier generation of the MoO3 interconnector layer.

  10. Perovskite Oxide Thin Film Growth, Characterization, and Stability

    Science.gov (United States)

    Izumi, Andrew

    Studies into a class of materials known as complex oxides have evoked a great deal of interest due to their unique magnetic, ferroelectric, and superconducting properties. In particular, materials with the ABO3 perovskite structure have highly tunable properties because of the high stability of the structure, which allows for large scale doping and strain. This also allows for a large selection of A and B cations and valences, which can further modify the material's electronic structure. Additionally, deposition of these materials as thin films and superlattices through techniques such as pulsed laser deposition (PLD) results in novel properties due to the reduced dimensionality of the material. The novel properties of perovskite oxide heterostructures can be traced to a several sources, including chemical intermixing, strain and defect formation, and electronic reconstruction. The correlations between microstructure and physical properties must be investigated by examining the physical and electronic structure of perovskites in order to understand this class of materials. Some perovskites can undergo phase changes due to temperature, electrical fields, and magnetic fields. In this work we investigated Nd0.5Sr 0.5MnO3 (NSMO), which undergoes a first order magnetic and electronic transition at T=158K in bulk form. Above this temperature NSMO is a ferromagnetic metal, but transitions into an antiferromagnetic insulator as the temperature is decreased. This rapid transition has interesting potential in memory devices. However, when NSMO is deposited on (001)-oriented SrTiO 3 (STO) or (001)-oriented (LaAlO3)0.3-(Sr 2AlTaO6)0.7 (LSAT) substrates, this transition is lost. It has been reported in the literature that depositing NSMO on (110)-oriented STO allows for the transition to reemerge due to the partial epitaxial growth, where the NSMO film is strained along the [001] surface axis and partially relaxed along the [11¯0] surface axis. This allows the NSMO film enough

  11. Nanoscale aluminum dimples for light-trapping in organic thin-films

    DEFF Research Database (Denmark)

    Goszczak, Arkadiusz Jaroslaw; Adam, Jost; Cielecki, Pawel Piotr;

    -beam evaporation of a few nanometers of aluminum followed by a micrometer layer of aluminum formed via sputter deposition. The samples are then anodized to form nano-scale pores of controlled sizes. The anodization of the prepared samples occurs in an electrochemical cell in H2SO4, H2C2O4 and H3PO4 solutions....... Electrolyte solution variation and anodization parameters (sample temperature, voltage) control, allows for AAO pore diameter and interpore distance tuning. The fabricated AAO is selectively etched in H2CrO4/H3PO4 mixtures, in order to reveal the underlying aluminum nanoscale dimples, which are present...

  12. Indium oxide inverse opal films synthesized by structure replication method

    Science.gov (United States)

    Amrehn, Sabrina; Berghoff, Daniel; Nikitin, Andreas; Reichelt, Matthias; Wu, Xia; Meier, Torsten; Wagner, Thorsten

    2016-04-01

    We present the synthesis of indium oxide (In2O3) inverse opal films with photonic stop bands in the visible range by a structure replication method. Artificial opal films made of poly(methyl methacrylate) (PMMA) spheres are utilized as template. The opal films are deposited via sedimentation facilitated by ultrasonication, and then impregnated by indium nitrate solution, which is thermally converted to In2O3 after drying. The quality of the resulting inverse opal film depends on many parameters; in this study the water content of the indium nitrate/PMMA composite after drying is investigated. Comparison of the reflectance spectra recorded by vis-spectroscopy with simulated data shows a good agreement between the peak position and calculated stop band positions for the inverse opals. This synthesis is less complex and highly efficient compared to most other techniques and is suitable for use in many applications.

  13. Spray deposited titanium oxide thin films as passive counter electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, P.S.; Mujawar, S.H.; Inamdar, A.I.; Patil, P.S. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur-416004 (India); Deshmukh, H.P. [Bharati Vidyapeeth Deemed University, Yashwantrao Mohite College, Pune-411038 (India)

    2007-02-15

    Titanium dioxide (TiO{sub 2}) thin films were deposited from methanolic solution onto fluorine doped tin oxide coated conducting glass substrates by spray pyrolysis technique. The electrochemical properties of TiO{sub 2} thin films were investigated using cyclic voltammetry, chronoamperometry, chronocoulometry and iono-optical studies, in 0.1N H{sub 2}SO{sub 4} electrolyte. Performance of the films deposited at three different substrate temperatures, viz. 350, 400 and 450 C is discussed in view of their utilization in electrochromic devices, as counter electrode. The magnitude of charge storage capacity, Q/t (4.75-6.13 x 10{sup -3} mC/(cm{sup 2} nm)) and colouration efficiency (3.2-4.3 cm{sup 2}/mC) of TiO{sub 2} rank these films among the promising counter electrodes in electrochromic devices. (author)

  14. Ferroelectric thin films using oxides as raw materials

    Directory of Open Access Journals (Sweden)

    E.B. Araújo

    1999-01-01

    Full Text Available This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM, Infrared Spectroscopy (IR and Rutherford Backscattering Spectroscopy (RBS. The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.

  15. Performance of supercapacitor with electrodeposited ruthenium oxide film electrodes—effect of film thickness

    Science.gov (United States)

    Park, Bong-Ok; Lokhande, C. D.; Park, Hyung-Sang; Jung, Kwang-Deog; Joo, Oh-Shim

    Thin-film ruthenium oxide electrodes are prepared by cathodic electrodeposition on a titanium substrate. Different deposition periods are used to obtain different film thicknesses. The electrodes are used to form a supercapacitor with a 0.5 M H 2SO 4 electrolyte. The specific capacitance and charge-discharge periods are found to be dependent on the electrode thickness. A maximum specific capacitance of 788 F g -1 is achieved with an electrode thickness of 0.0014 g cm -2. These results are explained by considering the morphological changes that take place with increasing film thickness.

  16. Structural transformation of nickel hydroxide films during anodic oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Crocker, R.W.; Muller, R.H.

    1992-05-01

    The transformation of anodically formed nickel hydroxide/oxy-hydroxide electrodes has been investigated. A mechanism is proposed for the anodic oxidation reaction, in which the reaction interface between the reduced and oxidized phases of the electrode evolves in a nodular topography that leads to inefficient utilization of the active electrode material. In the proposed nodular transformation model for the anodic oxidation reaction, nickel hydroxide is oxidized to nickel oxy-hydroxide in the region near the metal substrate. Since the nickel oxy-hydroxide is considerably more conductive than the surrounding nickel hydroxide, as further oxidation occurs, nodular features grow rapidly to the film/electrolyte interface. Upon emerging at the electrolyte interface, the reaction boundary between the nickel hydroxide and oxy-hydroxide phases spreads laterally across the film/electrolyte interface, creating an overlayer of nickel oxy-hydroxide and trapping uncharged regions of nickel hydroxide within the film. The nickel oxy-hydroxide overlayer surface facilitates the oxygen evolution side reaction. Scanning tunneling microscopy of the electrode in its charged state revealed evidence of 80 {endash} 100 Angstrom nickel oxy-hydroxide nodules in the nickel hydroxide film. In situ spectroscopic ellipsometer measurements of films held at various constant potentials agree quantitatively with optical models appropriate to the nodular growth and subsequent overgrowth of the nickel oxy-hydroxide phase. A two-dimensional, numerical finite difference model was developed to simulate the current distribution along the phase boundary between the charged and uncharged material. The model was used to explore the effects of the physical parameters that govern the electrode behavior. The ratio of the conductivities of the nickel hydroxide and oxy-hydroxide phases was found to be the dominant parameter in the system.

  17. Functionalizing Aluminum Oxide by Ag Dendrite Deposition at the Anode during Simultaneous Electrochemical Oxidation of Al.

    Science.gov (United States)

    Rafailović, Lidija D; Gammer, Christoph; Rentenberger, Christian; Trišović, Tomislav; Kleber, Christoph; Karnthaler, Hans Peter

    2015-11-01

    A novel synthesis strategy is presented for depositing metallic Ag at the anode during simultaneous electrochemical oxidation of Al. This unexpected result is achieved based on galvanic coupling. Metallic dendritic nanostructures well-anchored in a high surface area supporting matrix are envisioned to open up a new avenue of applications. PMID:26398487

  18. Growth control of the oxidation state in vanadium oxide thin films

    OpenAIRE

    Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; Egami, Takeshi; Lee, Ho Nyung

    2014-01-01

    Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metal- insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxi...

  19. Albumin adsorption on oxide thin films studied by spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Silva-Bermudez, P., E-mail: suriel21@yahoo.com [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n, C.U., 04510, Mexico D.F. (Mexico); Unidad de Posgrado, Facultad de Odontologia, Universidad Nacional Autonoma de Mexico, CU, 04510, Mexico D.F. (Mexico); Rodil, S.E.; Muhl, S. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n, C.U., 04510, Mexico D.F. (Mexico)

    2011-12-15

    Thin films of tantalum, niobium, zirconium and titanium oxides were deposited by reactive magnetron sputtering and their wettability and surface energy, optical properties, roughness, chemical composition and microstructure were characterized using contact angle measurements, spectroscopic ellipsometry, profilometry, X-ray photoelectron spectroscopy and X-ray diffraction, respectively. The purpose of the work was to correlate the surface properties of the films to the Bovine Serum Albumin (BSA) adsorption, as a first step into the development of an initial in vitro test of the films biocompatibility, based on standardized protein adsorption essays. The films were immersed into BSA solutions with different protein concentrations and protein adsorption was monitored in situ by dynamic ellipsometry; the adsorption-rate was dependent on the solution concentration and the immersion time. The overall BSA adsorption was studied in situ using spectroscopic ellipsometry and it was found to be influenced by the wettability of the films; larger BSA adsorption occurred on the more hydrophobic surface, the ZrO{sub 2} film. On the Ta{sub 2}O{sub 5}, Nb{sub 2}O{sub 5} and TiO{sub 2} films, hydrophilic surfaces, the overall BSA adsorption increased with the surface roughness or the polar component of the surface energy.

  20. Silicon nanocrystals embedded in oxide films grown by magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Caroline Bonafos

    2016-05-01

    Full Text Available This paper presents a comparison of the results that we obtained and reported over the last few years on the structural, optical and light emitting properties of Si-SiO2 and Si-Al2O3 films that were fabricated using a specific configuration of RF magnetron sputtering. In these films the Si volume fraction, x, varies along the film (which is typically 14 cm long from a value of ~0.1 at one end to ~0.9 at the other end. For the films with x > 0.3, the formation of amorphous Si clusters was observed in as-deposited Si-SiO2 and Si-Al2O3 films. Si nanocrystals (Si-ncs were generated by high-temperature annealing of the films in nitrogen atmosphere. We found that two processes can contribute to the Si-ncs formation: (i the crystallization of the existing amorphous Si inclusions in the as-deposited films, and (ii the thermally stimulated phase separation. Process (i can be responsible for the independence of Si-ncs mean sizes on x in annealed films with x > 0.5. At the same time, difference in the structural and the light emitting properties of the two types of films was observed. For the samples of the same x, the Si-ncs embedded in the Al2O3 host were found to be larger than the Si-ncs in the SiO2 host. This phenomenon can be explained by the lower temperature required for phase separation in Si-Al2O3 or by the lower temperature of the crystallization of Si-ncs in alumina. The latter suggestion is supported by Raman scattering and electron paramagnetic resonance spectra. In contrast with the Si-SiO2, the Si-ncs embedded in Si-Al2O3 films were found to be under tensile stress. This effect was explained by the strains at the interfaces between the film and silica substrate as well as between the Si inclusions and the Al2O3 host. It was also shown that exciton recombination in Si-ncs is the dominant radiative channel in Si-SiO2 films, while the emission from the oxide defects dominates in Si-Al2O3 films. This can be due to the high number of non

  1. One-step hydrothermal crystallization of a layered double hydroxide/alumina bilayer film on aluminum and its corrosion resistance properties.

    Science.gov (United States)

    Guo, Xiaoxiao; Xu, Sailong; Zhao, Lili; Lu, Wei; Zhang, Fazhi; Evans, David G; Duan, Xue

    2009-09-01

    A zinc-aluminum layered double hydroxide (ZnAl-LDH)/alumina bilayer film has been fabricated on an aluminum substrate by a one-step hydrothermal crystallization method. The LDH film was uniform and compact. XRD patterns and SEM images showed that the LDH film was highly oriented with the c-axis of the crystallites parallel to the substrate surface. The alumina layer existing between the LDH film and the substrate was formed prior to the LDH during the crystallization process. Polarization measurements showed that the bilayer film exhibited a low corrosion current density value of 10(-8) A/cm(2), which means that the LDH/alumina bilayer film can effectively protect aluminum from corrosion. Electrochemical impedance spectroscopy (EIS) showed that the impedance of the bilayer was 16 MOmega, meaning that the film served as a passive layer with a high charge transfer resistance. The adhesion between the film and the substrate was very strong which enhances its potential for practical application. PMID:19441823

  2. Effects of Substrate Local Strain on Microstructure of Electrodeposited Aluminum Film

    Institute of Scientific and Technical Information of China (English)

    TAN Yuehua; YAN Bo; GAO Ge; YANG Yuxin

    2006-01-01

    The aluminum coating layer was formed on a copper substrate with local strain region by using the electrodeposited method. It was found that the particle shape of the coating deposited on the copper substrate is very sensitive to the strain extent of substrate. The large needle-like aluminum particles were observed on the substrate region with large local strain, indicating that substrate local strain may affect the shape of the deposited particles and promote the nucleation and growth of the deposited particles.

  3. Thermal Stress Behavior of Aluminum Nanofilms under Heat Cycling

    International Nuclear Information System (INIS)

    In-situ thermal stress in aluminum nanofilms with silicon oxide glass (SOG) passivation was investigated by using synchrotron radiation at the SPring-8. Aluminum films of varying thickness (10, 20, 50 nm) were deposited on thermally oxidized silicon wafers by RF magnetron sputtering. Each specimen was heated in air over two cycles between room temperature and 300 deg. C. The following results were obtained: (1) {111} planes of aluminum nanofilm crystals were oriented parallel to the substrate normal; (2) the intensity of 111 diffraction was almost independent of temperature except in the case of the 50-nm-thick film; (3) the FWHM of 111 diffraction was almost independent of temperature at any given film thickness; and (4) for all films, the thermal stress varied linearly with heating temperature, and the hysteresis between the heating and cooling steps disappeared

  4. Development of metal oxide impregnated stilbite thick film ethanol sensor

    Science.gov (United States)

    Mahabole, M. P.; Lakhane, M. A.; Choudhari, A. L.; Khairnar, R. S.

    2016-05-01

    This paper presents the study of the sensing efficiency of Titanium oxide/ Stilbite and Copper oxide /Stilbite composites towards detection of hazardous pollutants like ethanol. Stilbite based composites are prepared by physically mixing zeolite with metal oxides namely TiO2 and CuO with weight ratios of 25:75, 50:50 and 75:25. The resulting sensor materials are characterized by X-ray diffraction and Fourier Transform Infrared Spectroscopy techniques. Composite sensors are fabricated in the form of thick film by using screen printing technique. The effect of metal oxide concentration on various ethanol sensing parameters such as operating temperature, maximum uptake capacity and response/recovery time are investigated. The results indicate that metal oxide impregnated stilbite composites have great potential as low temperature ethanol sensor.

  5. Improved zinc oxide film for gas sensor applications

    Indian Academy of Sciences (India)

    S Roy; S Basu

    2002-11-01

    Zinc oxide (ZnO) is a versatile material for different commercial applications such as transparent electrodes, piezoelectric devices, varistors, SAW devices etc because of its high piezoelectric coupling, greater stability of its hexagonal phase and its pyroelectric property. In fact, ZnO is a potential material for gas sensor applications. Good quality ZnO films were deposited on glass and quartz substrates by a novel CVD technique using zinc acetate as the starting solution. X-ray diffraction confirmed the crystallinity of the zinc oxide film and SEM study revealed uniform deposition of fine grains. Undoped ZnO films were used for detection of dimethylamine (DMA) and H2 at different temperatures by recording the change in resistivity of the film in presence of the test gases. The response was faster and the sensitivity was higher compared to the earlier reported ZnO based sensors developed in our laboratory. The main objective of this work was to study the selectivity of the ZnO film for a particular gas in presence of the others. The operating temperature was found to play a key role in the selectivity of such sensors.

  6. Aluminum-induced oxidative stress and neurotoxicity in grass carp (Cyprinidae--Ctenopharingodon idella).

    Science.gov (United States)

    Fernández-Dávila, María Lourdes; Razo-Estrada, Amparo Celene; García-Medina, Sandra; Gómez-Oliván, Leobardo Manuel; Piñón-López, Manuel Jesús; Ibarra, Rocio Guzmán; Galar-Martínez, Marcela

    2012-02-01

    Aluminum is used in a large number of anthropogenic processes, leading to aquatic ecosystems pollution. Diverse studies show that in mammals this metal may produce oxidative stress, is neurotoxic, and is involved in the development of neurodegenerative disorders, such as Alzhaimer's and Parkinson's diseases. Nevertheless, there are only few studies with respect to Al-induced neurotoxicity on aquatic fauna, particularly on fishes of economical interest, such as the grass carp (Ctenopharingodon idella). This study evaluates Al-induced toxicity on the grass carp C. idella. Specimens were exposed to the maximum concentration allowed in order to protect aquatic life (0.1 mg L⁻¹), for 12, 24, 48, 72 and 96 h. After the exposure time, lipid peroxidation degree, superoxide dismutase and catalase activity, as well as dopamine, adrenaline and noradrenaline levels were evaluated. Al concentration in organisms and water was also measured, in order to determine the bioconcentration factor. Results show that Al bioconcentrates in grass carp inducing oxidative stress (increment of 300 and 455 percent on lipid peroxidation degree and SOD activity, and decrement of 49 percent on CAT activity) and neurotoxicity (increment of 55 and 155 percent on dopamine and adrenaline levels and decrement of 93 percent on noradrenaline level). PMID:21993346

  7. Impact of water corrosion on nanoscale conductance on aluminum doped zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jong-Hun; Lee, Hyunsoo; Choi, Sunghyun [Graduate School of EEWS (WCU) and Nanocentury KI, KAIST, Daejeon, 305-701 (Korea, Republic of); Center for Nanomaterials and Chemical Reactions, Institute for Basic Science, Daejeon, 305-701 (Korea, Republic of); Bae, Kyoung Hwan [The Thin Film Coating Team, KCC Corporation, Marbook Dong 83, Ki-Heung Gu, Yong-In City, 459-708 (Korea, Republic of); Park, Jeong Young, E-mail: jeongypark@kaist.ac.kr [Graduate School of EEWS (WCU) and Nanocentury KI, KAIST, Daejeon, 305-701 (Korea, Republic of)

    2013-11-29

    One major cause of failure in solar cell modules is associated with the degradation of conductive layers by the ingress of water. In this study, the corrosive interactions between water and transparent conducting oxides, including aluminum-doped ZnO (AZO) and indium tin oxide (ITO), were studied. The AZO layer exhibited ∼ 90% increase in sheet resistance from 17.5 to 33 ohm/square after an accelerated moisture test where the samples were stored at 80 °C and 100% humidity, while the conductivity of the ITO layer remained essentially unchanged. In order to elucidate the water-induced degradation mechanism of AZO, the structure and composition were characterized with conductive atomic force microscopy, energy dispersive spectrometry (EDS), and X-ray photoelectron spectroscopy (XPS) before and after the moisture test. It was found that the grain boundary of AZO exhibits a higher local conductance compared to that in the middle of the grain. A decrease in local conductance at the grain boundary after the moisture test was observed, which is attributed to depletion of the Zn, based on XPS and EDS analyses. - Highlights: • The moisture treatment lowers the local conductance of Al-doped ZnO (AZO). • Conductive atomic force microscopy shows the nanoelectronic properties of AZO. • Locally conductive areas are distributed along the grain boundaries. • The ratio of Zn to O along the grain boundaries was higher than that inside the grain.

  8. Silicon effects on formation of EPO oxide coatings on aluminum alloys

    Energy Technology Data Exchange (ETDEWEB)

    Wang, L. [Department of Mechanical, Automotive and Materials Engineering, University of Windsor, Windsor, ON, N9B 3P4 (Canada); Nie, X. [Department of Mechanical, Automotive and Materials Engineering, University of Windsor, Windsor, ON, N9B 3P4 (Canada)]. E-mail: xnie@uwindsor.ca

    2006-01-03

    Electrolytic plasma processes (EPP) can be used for cleaning, metal-coating, carburizing, nitriding, and oxidizing. Electrolytic plasma oxidizing (EPO) is an advanced technique to deposit thick and hard ceramic coatings on a number of aluminum alloys. However, the EPO treatment on Al-Si alloys with a high Si content has rarely been reported. In this research, an investigation was conducted to clarify the effects of silicon contents on the EPO coating formation, morphology, and composition. Cast hypereutectic 390 alloys ({approx} 17% Si) and hypoeutectic 319 alloys ({approx} 7% Si) were chosen as substrates. The coating morphology, composition, and microstructure of the EPO coatings on those substrates were investigated using scanning electron microscopy (SEM) with energy dispersive X-ray (EDX) analysis and X-ray diffraction (XRD). A stylus roughness tester was used for surface roughness measurement. It was found that the EPO process had four stages where each stage was corresponding to various coating surface morphology, composition, and phase structures, characterised by different coating growth mechanisms.

  9. Promotion of electrochromism in spray-deposited molybdenum oxide-doped iridium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, P.S.; Sadale, S.B.; Inamdar, A.I.; Mahajan, S.S. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004 (India); Kawar, R.K. [Annasaheb Awate College, Manchar (Pune)

    2006-07-06

    Electrochromic molybdenum oxide-doped iridium oxide thin films were prepared by using a pneumatic spray pyrolysis technique onto fluorine-doped tin oxide (FTO) coated conducting glass substrates. An aqueous solution of 0.01M ammonium molybdate was mixed with 0.01M iridium trichloride in different volume proportions and the resultant solution was used as a precursor for spraying. An aqueous electrolyte (0.5N H{sub 2}SO{sub 4}) was used to study electrochromic properties of thin films using cyclic voltammetry (CV), chronoamperometry (CA) and spectrophotometry. During the potential scan the iridium oxide electrode switches between coloured and bleached state due to Ir{sup +4}-Ir{sup +3} intervalency charge transfers. The optical density difference ({delta}OD){sub l=630nm} and colouration efficiency was maximum for 2% molybdenum oxide-doped sample. Moreover, loss in charge density during extended cycling is less than undoped and other doped (>2%) samples. (author)

  10. Lanthanide oxides thin films for graphene-based devices

    International Nuclear Information System (INIS)

    We study the application potential of gadolinium and dysprosium oxide for graphene-based devices. Lanthanide oxide thin films of defined thickness are deposited in the presence of oxygen as well as nitrogen at 400 C by thermal CVD on an n+-Si(100) substrate. The roughness of the films is determined by atomic force micrographs and the thickness by cross-section scanning electron microscopy. A breakdown field in the range of 0.3 Vnm-1 is determined by I-V measurements for both rare earth oxides. From C-V measurements at 1 MHz the dielectric constant of Gd2O3 (εr=9) and Dy2O3 (εr=8) are extracted. Since the dielectric constant of the rare earth oxides are higher compared to SiO2 we expect an improved screening of charged impurities and therefore an improved performance for graphene-based devices due to the oxides. By using a Fresnel-law based model the contrast of graphene is calculated as a function of wavelength for different oxide thicknesses and compared to optical and atomic force micrographs of exfoliated graphene on Gd2O3 and Dy2O3.

  11. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  12. Zinc oxide doped graphene oxide films for gas sensing applications

    Science.gov (United States)

    Chetna, Kumar, Shani; Garg, A.; Chowdhuri, A.; Dhingra, V.; Chaudhary, S.; Kapoor, A.

    2016-05-01

    Graphene Oxide (GO) is analogous to graphene, but presence of many functional groups makes its physical and chemical properties essentially different from those of graphene. GO is found to be a promising material for low cost fabrication of highly versatile and environment friendly gas sensors. Selectivity, reversibility and sensitivity of GO based gas sensor have been improved by hybridization with Zinc Oxide nanoparticles. The device is fabricated by spin coating of deionized water dispersed GO flakes (synthesized using traditional hummer's method) doped with Zinc Oxide on standard glass substrate. Since GO is an insulator and functional groups on GO nanosheets play vital role in adsorbing gas molecules, it is being used as an adsorber. Additionally, on being exposed to certain gases the electric and optical characteristics of GO material exhibit an alteration in behavior. For the conductivity, we use Zinc Oxide, as it displays a high sensitivity towards conduction. The effects of the compositions, structural defects and morphologies of graphene based sensing layers and the configurations of sensing devices on the performances of gas sensors were investigated by Raman Spectroscopy, X-ray diffraction(XRD) and Keithley Sourcemeter.

  13. Oxide films in laser additive manufactured Inconel 718

    International Nuclear Information System (INIS)

    A continuous-wave 5 kW fiber laser welding system was used in conduction mode to deposit Inconel® alloy 718 (IN718) by employing filler wire on as-serviced IN718 parent material (PM) substrates. The direct laser deposited (DLD) coupons and as-serviced IN718 PM were then evaluated through tensile testing. To understand the failure mechanisms, the tensile fracture surfaces of the as-serviced IN718 PM, DLD and DLD-PM samples were analyzed using scanning electron microscopy. The fracture surfaces revealed the presence of both Al2O3 and Cr2O3 films, although the latter was reasoned to be the main oxide in IN718. Both the experimental observations and thermodynamic analysis indicated that oxidation of some alloying elements in IN718 cannot be completely avoided during manufacturing, whether in the liquid state under vacuum (for casting, the electron beam melting, welding and/or deposition) or with inert gas protection (for welding or laser deposition). The exposed surface of the oxide film on the fracture surface has poor wetting with the metal and thus can constitute a lack of bonding or a crack with either the metal and/or another non-wetted side of the oxide film. On the other hand, the wetted face of the oxide film has good atom-to-atom contact with the metal and may nucleate some intermetallic compounds, such as Laves, Ni3Nb-δ, Nb-rich MC and γ′ compounds. The potential of their nucleation on Cr2O3 was assessed using planar disregistry. Coherent planes were found between these intermetallics and Cr2O3

  14. Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Gyu-bong Cho

    2014-01-01

    Full Text Available LiNiO2 thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2 thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4 oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2 thin film. The ZrO2-coated LiNiO2 thin film provided an improved discharge capacity compared to bare LiNiO2 thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2 coating layer.

  15. Duplex Al2O3/DLC Coating on 15SiCp/2024 Aluminum Matrix Composite Using Combined Microarc Oxidation and Filtered Cathodic Vacuum Arc Deposition

    Science.gov (United States)

    Xue, Wenbin; Tian, Hua; Du, Jiancheng; Hua, Ming; Zhang, Xu; Li, Yongliang

    2012-08-01

    Microarc oxidation (MAO) treatment produces a thick Al2O3 coating on the 15SiCp/2024 aluminum matrix composite. After pretreatment of Ti ion implantation, a thin diamond-like carbon film (DLC) was deposited on the top of polished Al2O3 coating by a pulsed filtered cathodic vacuum arc (FCVA) deposition system with a metal vapor vacuum arc (MEVVA) source. The morphology and tribological properties of the duplex Al2O3/DLC multiplayer coating were investigated by Raman spectroscopy, scanning electron microscopy (SEM) and SRV ball-on-disk friction tester. It is found that the duplex Al2O3/DLC coating had good adhesion and a low friction coefficient of less than 0.07. As compared to a single Al2O3 or DLC coating, the duplex Al2O3/DLC coating on aluminum matrix composite exhibited a better wear resistance against ZrO2 ball under dry sliding, because the Al2O3 coating as an intermediate layer improved load support for the top DLC coating on 15SiCp/2024 composite substrate, meanwhile the top DLC coating displayed low friction coefficient.

  16. In vitro biocompatibility of titanium-nickel alloy with titanium oxide film by H2O2 oxidation

    Institute of Scientific and Technical Information of China (English)

    HU Tao; CHU Cheng-lin; YIN Li-hong; PU Yao-pu; DONG Yin-sheng; GUO Chao; SHENG Xiao-bo; CHUNG Jonathan-CY; CHU Paul-K

    2007-01-01

    Titanium oxide film with a graded interface to NiTi matrix was synthesized in situ on NiTi shape memory alloy(SMA) by oxidation in H2O2 solution. In vitro studies including contact angle measurement, hemolysis, MTT cytotoxicity and cell morphology tests were employed to investigate the biocompatibility of the H2O2-oxidized NiTi SMAs with this titanium oxide film. The results reveal that wettability, blood compatibility and fibroblasts compatibility of NiTi SMA are improved by the coating of titanium oxide film through H2O2 oxidation treatment.

  17. Admicellar polymerization and characterization of thin poly(2,2,2-trifluoroethyl acrylate) film on aluminum alloys for in-crevice corrosion control.

    Science.gov (United States)

    Le, Duc V; Kendrick, Melissa M; O'Rear, Edgar A

    2004-08-31

    Corrosion control of aluminum alloys in the aerospace industry has been of great interest in recent years, especially the aging of certain fleets in the United States Air Force. A thin film of poly(2,2,2-trifluoroethyl acrylate) (PTFEA) has been deposited on aluminum alloy coupons by admicellar polymerization for the purpose of in situ control of corrosion in narrow gaps. Polymerization conditions were chosen based on contact angle measurements, and the final product film was characterized using Fourier transform infrared spectroscopy, scanning electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy. Surface characterization studies have shown that the polymeric film is approximately 10 nm thick with nonuniform deposition at this scale. The modified surface is highly hydrophobic and able to delay salt solution uptake (3.5 wt % NaCl) for a period of up to 6 h in crevice corrosion tests. PTFEA films reduced the corroded area to 20% compared to 65% for a bare aluminum control and to 33% for poly(methyl methacrylate) (PMMA) film in a 24 h crevice test. PTFEA film exhibits better corrosion protection than PMMA film because it has higher hydrophobicity than a PMMA-modified surface and comparable properties as a corrosion barrier. PMID:15323534

  18. Effect of deposition parameters on mechanical properties of TiN films coated on 2A12 aluminum alloys by arc ion plating (AIP)

    Institute of Scientific and Technical Information of China (English)

    AWAD Samir Hamid; QIAN Han-cheng

    2005-01-01

    TiN films were deposited on 2A12 aluminum alloy by arc ion plating (AIP). The Vickers hardness of the films deposited at different bias voltages and different nitrogen gas pressures, and that of the substrate were measured. The surface roughness of the TiN films diposited at -30 V and -80 V respectively and at different nitrogen gas pressure was measured also. The mass loss of TiN films deposited at 0 V, -30 V and -80 V respectively were analyzed in dry sand rubber wheel abrasive wear tests and wet ones in comparison with uncoated Al alloy and austenitic stainless steel (AISI 316L). It is revealed that the highest hardness of the TiN film is obtained at a bias voltage of -30 V and a N2 gas pressure of 0.5 Pa. The surface roughness of the film is larger at -80 V than that at -30 V and reduces as the increase of the N2 gas pressure. The mass loss of TiN-film coated 2A12 aluminum alloy is remarkably less than that of uncoated Al alloy and also that of AISI 316L, which indicates that the abrasive wear rate is greatly reduced by the application of TiN coating. TiN coating deposited by arc ion plating (AIP) technique on aluminum alloy can be a potential coating for machine parts requiring preciseness and lightness.

  19. Influence of Technical Parameters on the Properties of Micro-arc Oxidation Film on Casted Aluminum-Silicon Alloy%工艺参数对铸造铝-硅合金微弧氧化层特性的影响

    Institute of Scientific and Technical Information of China (English)

    卢立红; 沈德久; 王玉林

    2001-01-01

    Ceramic coating was obtained by micro-arc oxidation on thesubstrate of casted aluminum-silicon alloy. The influence of current density and intensifying time on the thickness, the surface roughness and the hardness of the ceramic layer, and the influence of intensifying time on the forming velocity of the layer are studied in this paper. The results show that both the thickness and the surface roughness of the layer increase. There is a limit value in the thickenss with the increase in current density and intensifying time. The hardness increases and there is a limit value with the increase in the current density. In lower current density, the forming velocity of the ceramic layer does not vary with the intensifying time, while it decreases with the increment of intensifying time in higher current density, and its value approximates zero in the end. The higher the current density is, the faster the decrease of forming velocity.%用微弧氧化的方法在铸造铝-硅合金基体上获得陶瓷层。分别研究了电流密度及强化时间对陶瓷层厚度、表面粗糙度及硬度的影响,以及强化时间对成膜速度的影响。结果表明:陶瓷层厚度、表面粗糙度都随电流密度及强化时间的增大而增大,膜厚随二者增加有一极限值:硬度随电流密度增加而增加,也有一极限值:成膜速度在较低电流密度时不随时间而变,在较高电流密度时,成膜速度随时间增加而下降,最终趋于零,电流密度越高,下降速度越快。

  20. Reduction of interface states by hydrogen treatment at the aluminum oxide/4H-SiC Si-face interface

    Directory of Open Access Journals (Sweden)

    Hironori Yoshioka

    2016-10-01

    Full Text Available Processes to form aluminum oxide as a gate insulator on the 4H-SiC Si-face are investigated to eliminate the interface state density (DIT and improve the mobility. Processes that do not involve the insertion or formation of SiO2 at the interface are preferential to eliminate traps that may be present in SiO2. Aluminum oxide was formed by atomic layer deposition with hydrogen plasma pretreatment followed by annealing in forming gas. Hydrogen treatment was effective to reduce DIT at the interface of aluminum oxide and SiC without a SiO2 interlayer. Optimization of the process conditions resulted in DIT for the metal oxide semiconductor (MOS capacitor of 1.7×1012 cm−2eV−1 at 0.2 eV, and the peak field-effect mobility of the MOS field-effect transistor (MOSFET was approximately 57 cm2V−1s−1.

  1. Ultrathin iron oxide films on Ru(0001)

    OpenAIRE

    Monti, Matteo

    2014-01-01

    Tesis doctoral inédita leída en la Universidad Autónoma de Madrid, Facultad de Ciencias, Departamento de Física Aplicada. Fecha de lectura: 11-07-2014 In this dissertation the growth and properties of ultrathin iron oxides lms on ruthenium have been investigated by means of di raction, microscopy and spectroscopy techniques. The systems studied have been prepared in-situ using molecular beam epitaxy and oxygen-assisted molecular beam epitaxy. We begin with the preparation of ultr...

  2. Effect of Polar Environments on the Aluminum Oxide Shell Surrounding Aluminum Particles: Simulations of Surface Hydroxyl Bonding and Charge.

    Science.gov (United States)

    Padhye, Richa; Aquino, Adelia J A; Tunega, Daniel; Pantoya, Michelle L

    2016-06-01

    Density functional theory (DFT) calculations were performed to understand molecular variations on an alumina surface due to exposure to a polar environment. The analysis has strong implications for the reactivity of aluminum (Al) particles passivated by an alumina shell. Recent studies have shown a link between the carrier fluid used for Al powder intermixing and the reactivity of Al with fluorine containing reactive mixtures. Specifically, flame speeds show a threefold increase when polar liquids are used to intermix aluminum and fluoropolymer powder mixtures. It was hypothesized that the alumina lattice structure could be transformed due to hydrogen bonding forces exerted by the environment that induce modified bond distances and charges and influence reactivity. In this study, the alumina surface was analyzed using DFT calculations and model clusters as isolated systems embedded in polar environments (acetone and water). The conductor-like screening model (COSMO) was used to mimic environmental effects on the alumina surface. Five defect models for specific active -OH sites were investigated in terms of structures and vibrational -OH stretching frequencies. The observed changes of the surface OH sites invoked by the polar environment were compared to the bare surface. The calculations revealed a strong connection between the impact of carrier fluid polarity on the hydrogen bonding forces between the surface OH sites and surrounding species. Changes were observed in the OH characteristic properties such as OH distances (increase), atomic charges (increase), and OH stretching frequencies (decrease); these consequently improve OH surface reactivity. The difference between medium (acetone) and strong (water) polar environments was minimal in the COSMO approximation. PMID:27175545

  3. PHOTOELECTRIC AND PHOTOMAGNETIC RESPONSE OF INDIUM-TIN OXIDE FILMS

    Directory of Open Access Journals (Sweden)

    I. K. Meshkovsky

    2015-11-01

    Full Text Available Subject of Research. The goal of the present research is investigation of photoelectric and photomagnetic response of ITO (indium-tin oxide films under UV laser irradiation. Method. The ITO films were prepared by magnetron sputtering with the thickness equal to 300nm. The films were irradiated by UV laser light with 248 nm wavelength in laser pulse energy range from 10 mJ to 150 mJ by KrF excimer laser. Metallic electrodes were deposited on the films. Information about the films surface topography was obtained by atomic force microscopy and scanning electron microscopy. The film structure was investigated by X-ray diffraction. Main Results. It was shown that voltage appears between metallic contacts under the UV light effect. The electric current was observed through resistive load. The anisotropy of electric field producing photoelectric response was demonstrated for the first time. The appearance of magnetic field under the laser light irradiation was observed for the first time. The dependence of the response voltage on the laser pulse energy was linear over the whole measured energy range. The following physical mechanism was proposed for description of the observed phenomenon: electric voltage is associated with non-uniform distribution of the average crystallite size along the film surface, and, therefore, with mean free path of the charge carriers along the film surface. Photomagnetic response could be associated with collective behavior of the large number of charged particles, created due to high intensity laser irradiation. Practical Relevance. The phenomenon being studied could be applied for creation of new optoelectronic devices, for example, modulators, optical detectors, etc. Particularly, due to linear dependence of photoelectric response on the laser pulse energy, this phenomenon is attractive for manufacturing of simple and cheap excimer laser pulse energy detectors.

  4. Oxidation states of molybdenum in oxide films formed in sulphuric acid and sodium hydroxide

    Energy Technology Data Exchange (ETDEWEB)

    Okonkwo, I.A.; Doff, J.; Baron-Wiechec, A. [Corrosion and Protection Centre, School of Materials, The University of Manchester, Manchester M13 9PL (United Kingdom); Jones, G. [Waters Corporation, Floats Rd, Roundthorn Ind. Est., Manchester M23 9LZ (United Kingdom); Koroleva, E.V. [Corrosion and Protection Centre, School of Materials, The University of Manchester, Manchester M13 9PL (United Kingdom); Skeldon, P., E-mail: p.skeldon@manchester.ac.uk [Corrosion and Protection Centre, School of Materials, The University of Manchester, Manchester M13 9PL (United Kingdom); Thompson, G.E. [Corrosion and Protection Centre, School of Materials, The University of Manchester, Manchester M13 9PL (United Kingdom)

    2012-07-31

    X-ray photoelectron spectroscopy is used to investigate the oxidation states of molybdenum in thin films formed potentiostatically, over a range of potentials, in either 1 mol dm{sup -3} H{sub 2}SO{sub 4} or 10 mol dm{sup -3} NaOH at 20 Degree-Sign C. Mo 3d spectra suggested that MoO{sub 2} and Mo(OH){sub 2} were the main components of the films, with smaller amounts of MoO{sub 3} and possibly Mo{sub 2}O{sub 5}. O 1s spectra indicated the presence of oxygen as oxide and hydroxide species and as bound water. Ion beam analysis revealed the formation of thin films at all potentials, with significant losses of oxidized molybdenum to the electrolyte. - Highlights: Black-Right-Pointing-Pointer Oxides are formed on molybdenum in sulphuric acid and sodium hydroxide solutions. Black-Right-Pointing-Pointer Molybdenum IV and VI are identified by XPS, with MoO2 species dominating. Black-Right-Pointing-Pointer Thicknesses of films are determined by ion beam analysis for a range of potentials. Black-Right-Pointing-Pointer Films form at low efficiency due to loss of molybdenum species to electrolyte.

  5. Properties of nano-structured cuprous oxide thin films fabricated by thermal oxidation of copper layer

    Science.gov (United States)

    Gevorgyan, Vladimir; Reymers, Anna; Nersesyan, Manuk; Nitsche, Serge; Giorgio, Suzanne; Karapetyan, Artak; Marine, Wladimir

    2011-07-01

    Among the potential photovoltaic devices based on semiconductor oxides as active layer is cuprous oxide (Cu2O). Although the theoretical limit of Cu2O solar cell efficiency is 20%, the best efficiency obtained up to now is only 2%. This is due to a very limited amount of work devoted to this semiconductor and only during last few years this material has been investigated for solar cells applications. In this work we report our results of optical, structural and surface morphology investigations of Cu2O films prepared by thermal oxidation of copper layer. The effects of oxidation temperature and oxygen partial pressure on surface morphology and crystalline structure of Cu2O films were studied. Scanning electron microscope results have shown that Cu2O films have microcrystalline structure with grain size of about 5-15 μm. Analysis of fine structure shows typical lattice spacing of cubic Cu2O structure. X-ray investigations have shown that the films consist of single Cu2O phase without any interstitial phase and have a nano-grain structure. The grains have an average dimensions about (33-41) nm. Optical investigations have shown that the absorption edge of prepared films is due to a direct allowed transition. The value of the optical band gap is 2.08 eV.

  6. Tungsten oxide nanowires grown on amorphous-like tungsten films.

    Science.gov (United States)

    Dellasega, D; Pietralunga, S M; Pezzoli, A; Russo, V; Nasi, L; Conti, C; Vahid, M J; Tagliaferri, A; Passoni, M

    2015-09-11

    Tungsten oxide nanowires have been synthesized by vacuum annealing in the range 500-710 °C from amorphous-like tungsten films, deposited on a Si(100) substrate by pulsed laser deposition (PLD) in the presence of a He background pressure. The oxygen required for the nanowires formation is already adsorbed in the W matrix before annealing, its amount depending on deposition parameters. Nanowire crystalline phase and stoichiometry depend on annealing temperature, ranging from W18O49-Magneli phase to monoclinic WO3. Sufficiently long annealing induces the formation of micrometer-long nanowires, up to 3.6 μm with an aspect ratio up to 90. Oxide nanowire growth appears to be triggered by the crystallization of the underlying amorphous W film, promoting their synthesis at low temperatures. PMID:26292084

  7. Tantalum oxide thin films as protective coatings for sensors

    OpenAIRE

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin-films have been investigated as protective coating for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å/h. Etching in liquids with pH values in the range from pH 2-11 have generally given etch rates below 0.04 Å/h. On the other hand patterning is possible in hydrofluoric acid. Further, the passivation behaviour of amorphous tant...

  8. Antimony Doped Tin Oxide Thin Films: Co Gas Sensor

    Directory of Open Access Journals (Sweden)

    P.S. Joshi

    2011-01-01

    Full Text Available Tin dioxide (SnO2 serves as an important base material in a variety of resistive type gas sensors. The widespread applicability of this semicoducting oxide is related both to its range of conductance variability and to the fact that it responds to both oxidising and reducing gases. The antimony doped tin-oxide films were prepared by spray pyrolysis method. The as-deposited films are blackish in colour. Addition of antimony impurity showed little increase in the thickness. The X-ray diffraction pattern shows characteristic tin oxide peaks with tetragonal structure. As the doping concentration of antimony was increased, new peak corresponding to Sb was observed. The intensity of this peak found to be increased when the Sb concentration was increased from 0.01 % to the 1 % which indicates the antimony was incorporated into the tin oxide. For gas sensing studies ohmic contacts were preferred to ensure the changes in resistance of sensor is due to only adsorption of gas molecule. The graph of I-V shows a straight line in nature which indicates the ohmic contact. The sensitivity of the sensor for CO gas was tested. The sensitivity of antimony doped tin oxide found to be increased with increasing Sb concentration. The maximum sensitivity was observed for Sb = 1 % at a working temperature of 250 °C.

  9. Photocatalytic oxide films in the built environment

    Science.gov (United States)

    Österlund, Lars; Topalian, Zareh

    2014-11-01

    The possibility to increase human comfort in buildings is a powerful driving force for the introduction of new technology. Among other things our sense of comfort depends on air quality, temperature, lighting level, and the possibility of having visual contact between indoors and outdoors. Indeed there is an intimate connection between energy, comfort, and health issues in the built environment, leading to a need for intelligent building materials and green architecture. Photocatalytic materials can be applied as coatings, filters, and be embedded in building materials to provide self-cleaning, antibacterial, air cleaning, deodorizing, and water cleaning functions utilizing either solar light or artificial illumination sources - either already present in buildings, or by purposefully designed luminaries. Huge improvements in indoor comfort can thus be made, and also alleviate negative health effects associated with buildings, such as the sick-house syndrome. At the same time huge cost savings can be made by reducing maintenance costs. Photocatalytic oxides can be chemically modified by changing their acid-base surface properties, which can be used to overcome deactivation problems commonly encountered for TiO2 in air cleaning applications. In addition, the wetting properties of oxides can be tailored by surface chemical modifications and thus be made e.g. oleophobic and water repellent. Here we show results of surface acid modified TiO2 coatings on various substrates by means of photo-fixation of surface sulfate species by a method invented in our group. In particular, we show that such surface treatments of photocatalytic concrete made by mixing TiO2 nanoparticles in reactive concrete powders result in concrete surfaces with beneficial self-cleaning properties. We propose that such approaches are feasible for a number of applications in the built environment, including glass, tiles, sheet metals, plastics, etc.

  10. Photocatalytic oxide films in the built environment

    International Nuclear Information System (INIS)

    The possibility to increase human comfort in buildings is a powerful driving force for the introduction of new technology. Among other things our sense of comfort depends on air quality, temperature, lighting level, and the possibility of having visual contact between indoors and outdoors. Indeed there is an intimate connection between energy, comfort, and health issues in the built environment, leading to a need for intelligent building materials and green architecture. Photocatalytic materials can be applied as coatings, filters, and be embedded in building materials to provide self-cleaning, antibacterial, air cleaning, deodorizing, and water cleaning functions utilizing either solar light or artificial illumination sources – either already present in buildings, or by purposefully designed luminaries. Huge improvements in indoor comfort can thus be made, and also alleviate negative health effects associated with buildings, such as the sick-house syndrome. At the same time huge cost savings can be made by reducing maintenance costs. Photocatalytic oxides can be chemically modified by changing their acid-base surface properties, which can be used to overcome deactivation problems commonly encountered for TiO2 in air cleaning applications. In addition, the wetting properties of oxides can be tailored by surface chemical modifications and thus be made e.g. oleophobic and water repellent. Here we show results of surface acid modified TiO2 coatings on various substrates by means of photo-fixation of surface sulfate species by a method invented in our group. In particular, we show that such surface treatments of photocatalytic concrete made by mixing TiO2 nanoparticles in reactive concrete powders result in concrete surfaces with beneficial self-cleaning properties. We propose that such approaches are feasible for a number of applications in the built environment, including glass, tiles, sheet metals, plastics, etc

  11. Metal oxide films on glass and steel substrates

    CERN Document Server

    Sohi, A M

    1987-01-01

    in the pH8 electrolyte supports the view that the rate limiting reduction reaction is possibly oxygen (or water) reduction although some contribution from an organic 'impurity' cannot be ruled out. Coatings of Fe sub 3 O sub 4 on mild steel have been prepared by CVD using pneumatic spraying techniques and the corrosion behaviour of coated electrodes in organic-phosphate electrolyte (pH8) has been examined. A variety of thin (10-1000nm) metal oxide films have been deposited on flat glass substrates by the pyrolysis of an aerosol of metal acetylacetonates in a suitable carrier. The optical characteristics and thickness of the films have been measured and particular interest has centered on the use of a novel pin on disc apparatus to measure the physical durability of such thin films. Characteristic friction/penetration force traces have been established for 1st Series transition metal oxide films and some ranking in terms of 'hardness' established. The use of SnO sub 2 - coated glass for electrodes in a light m...

  12. Oxidation Effects in Rare Earth Doped Topological Insulator Thin Films.

    Science.gov (United States)

    Figueroa, A I; van der Laan, G; Harrison, S E; Cibin, G; Hesjedal, T

    2016-01-01

    The breaking of time-reversal symmetry (TRS) in topological insulators is a prerequisite for unlocking their exotic properties and for observing the quantum anomalous Hall effect (QAHE). The incorporation of dopants which exhibit magnetic long-range order is the most promising approach for TRS-breaking. REBiTe3, wherein 50% of the Bi is substitutionally replaced by a RE atom (RE = Gd, Dy, and Ho), is a predicted QAHE system. Despite the low solubility of REs in bulk crystals of a few %, highly doped thin films have been demonstrated, which are free of secondary phases and of high crystalline quality. Here we study the effects of exposure to atmosphere of rare earth-doped Bi2(Se, Te)3 thin films using x-ray absorption spectroscopy. We demonstrate that these RE dopants are all trivalent and effectively substitute for Bi(3+) in the Bi2(Se, Te)3 matrix. We find an unexpected high degree of sample oxidation for the most highly doped samples, which is not restricted to the surface of the films. In the low-doping limit, the RE-doped films mostly show surface oxidation, which can be prevented by surface passivation, encapsulation, or in-situ cleaving to recover the topological surface state. PMID:26956771

  13. Evaluation of the microstructural and photocatalytic properties of aluminum-doped zinc oxide coatings deposited by plasma spraying

    International Nuclear Information System (INIS)

    Aluminum-doped zinc oxide (AZO) material produced from a nanopowder agglomerate was deposited as a plasma-sprayed coating, and the resulting microstructural and photocatalytic properties of these coatings were investigated. The microstructure of the AZO coatings was analyzed by X-ray diffraction and scanning electron microscopy. Additionally, the photocatalytic degradation of methylene blue caused by the AZO coatings was estimated via ultraviolet–visible spectroscopy. The results of this study demonstrate that the AZO coatings deposited by plasma spraying can influence the photocatalytic degradation of methylene blue. - Highlights: • We doped aluminum (Al) in a zinc oxide (ZnO) coating using plasma spraying. • More significant recrystallization was observed after plasma spraying. • The surface of the Al-doped ZnO coating exhibited a microplatelet microstructure. • The Al-doped ZnO coating displayed high photocatalytic activities

  14. The Surface Structure and Thermal Properties of Novel Polymer Composite Films Based on Partially Phosphorylated Poly(vinyl alcohol with Aluminum Phosphate

    Directory of Open Access Journals (Sweden)

    Asmalina Mohamed Saat

    2014-01-01

    Full Text Available Partially phosphorylated polyvinyl alcohol (PPVA with aluminum phosphate (ALPO4 composites was synthesized by solution casting technique to produce (PPVA100-y-(ALPO4y (y = 0, 1, and 2. The surface structure and thermal properties of the films were characterized using Fourier transform infrared (FTIR spectroscopy and thermogravimetric analysis (TGA. The results showed that the films have higher thermal stability with strong bonding between PPVA and ALPO4.

  15. Hafnium carbide formation in oxygen deficient hafnium oxide thin films

    Science.gov (United States)

    Rodenbücher, C.; Hildebrandt, E.; Szot, K.; Sharath, S. U.; Kurian, J.; Komissinskiy, P.; Breuer, U.; Waser, R.; Alff, L.

    2016-06-01

    On highly oxygen deficient thin films of hafnium oxide (hafnia, HfO2-x) contaminated with adsorbates of carbon oxides, the formation of hafnium carbide (HfCx) at the surface during vacuum annealing at temperatures as low as 600 °C is reported. Using X-ray photoelectron spectroscopy the evolution of the HfCx surface layer related to a transformation from insulating into metallic state is monitored in situ. In contrast, for fully stoichiometric HfO2 thin films prepared and measured under identical conditions, the formation of HfCx was not detectable suggesting that the enhanced adsorption of carbon oxides on oxygen deficient films provides a carbon source for the carbide formation. This shows that a high concentration of oxygen vacancies in carbon contaminated hafnia lowers considerably the formation energy of hafnium carbide. Thus, the presence of a sufficient amount of residual carbon in resistive random access memory devices might lead to a similar carbide formation within the conducting filaments due to Joule heating.

  16. {gamma}-Al{sub 2}O{sub 3} thin film formation via oxidation of {beta}-NiAl(1 1 0)

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Zhongfan, E-mail: zhangzhongfan@gmail.com [Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Li Long; Yang, Judith C. [Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, PA 15261 (United States); Department of Chemical and Petroleum Engineering, University of Pittsburgh, Pittsburgh, PA 15261 (United States)

    2011-09-15

    {beta}-NiAl(1 1 0) was oxidized in air for 1-2 h in the temperature range of 650-950 deg. C. The structure and morphology of the oxide films were characterized using a cross-sectional transmission electron microscopy (TEM) method. Only a thin film of aluminum oxide, {gamma}-Al{sub 2}O{sub 3}, was formed. The epitaxial relationship between NiAl and {gamma}-Al{sub 2}O{sub 3} as well as the surface roughness depends on the oxidation temperature. The Nishiyama-Wassermann (NW) orientation relation (OR) between {beta}-NiAl and {gamma}-Al{sub 2}O{sub 3} was noted at an oxidation temperature of 850 deg. C while the Kurdjumov-Sachs (KS) OR was observed at 650 deg. C. The changes in the epitaxial relationship between the {gamma}-Al{sub 2}O{sub 3} film and the NiAl substrate were caused by lattice mismatch-induced strain energy during oxide growth. It was also noted that short time oxidation at T = 750 deg. C created {gamma}' phase precipitates between the NiAl substrate and the {gamma}-Al{sub 2}O{sub 3} film, while oxidation at the higher temperature of 950 deg. C resulted in textured polycrystalline {gamma}-Al{sub 2}O{sub 3} films. The smoothest single crystal epitaxial {gamma}-Al{sub 2}O{sub 3} film formed at an oxidation temperature of 850 deg. C in air.

  17. Pomegranate Alleviates Oxidative Damage and Neurotransmitter Alterations in Rats Brain Exposed to Aluminum Chloride and/or Gamma Radiation

    International Nuclear Information System (INIS)

    Aluminum and gamma radiation, both are potent neurotoxins and have been implicated in many human neuro degenerative diseases. The present study was designed to investigate the role of pomegranate in alleviating oxidative damage and alteration of neurotransmitters in the brain of rats exposed to aluminum chloride (AlCl3), and/or gamma radiation (IR). The results revealed that rats whole body exposed to γ- rays, (1 Gy/week up to 4 Gy), and/or administered aluminum chloride (35 mg/kg body weight), via gavages for 4 weeks, resulted in brain tissue damage, featuring by significant increase of the level of thiobarbituric acid reactive substances (TBARS), and advanced oxidation protein products (AOPP), associated with significant decrease of superoxide dismutase (SOD) and catalase (CAT) activities, as well as glutathione (GSH) content indicating occurrence of oxidative stress. A significant decrease of serotonin (5-HT) level associated with a significant increase of 5-hydroxyindole acetic acid (5-HIAA), in addition to a significant decrease in dopamine (DA), norepinephrine (NE) and epinephrine (EPI) contents recorded at the 1st, 7th and 14th day post-irradiation, indicating alterations in the metabolism of brain monoamines. On the other hand, the results exhibited that, supplementation of rats with pomegranate, via gavages, at a dose of 3 ml /kg body weight/ day, for 4 weeks along with AlCl3 with or without radiation has significantly ameliorated the changes occurred in the mentioned parameters and the values returned close to the normal ones. It could be concluded that pomegranate, by its antioxidant constituents might antagonize brain oxidative damage and minimize the severity of aluminum (Al), and/or radiation-induced neurotransmitters disorders

  18. Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

    CERN Document Server

    Czapski, M; Tardivat, C; Stora, T; Bouville, F; Leloup, J; Luis, R Fernandes; Augusto, R Santos

    2013-01-01

    New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLORA codes. (C) 2013 Elsevier B.V. All rights reserved.

  19. Distribution of electric field near the surface of the aluminum oxide particle in the dust-electron thermal plasma

    International Nuclear Information System (INIS)

    We obtained the equation, which describes the distribution of electrical field in an equilibrium dust-electron plasma taking into account parameters of the electron gas inside the dust particles. The inclusion of these parameters performed on the basis of the model of ''solid- state plasma'', considering the condensed particle system as the ion core and the free electron gas. These calculations are performed for aluminum oxide particles

  20. Synthesis of carbon nanotube arrays using ethanol in porous anodic aluminum oxide template

    Institute of Scientific and Technical Information of China (English)

    YU Guojun; WANG Sen; GONG Jinlong; ZHU Dezhang; HE Suixia; LI Yulan; ZHU Zhiyuan

    2005-01-01

    Carbon nanotube (CNT) arrays confined by porous anodic aluminum oxide (AAO) template were synthesized using ethanol as reactant carbon source at low pressure. Images by scanning electron microscope (SEM) and low magnification transmission electron microscopy (TEM) show that these CNTs have highly uniform outer diameter and length, absolutely controlled by the diameter and depth of nano-channel arrays of the AAO. High resolution transmission electron microscopy (HRTEM) imaging indicates that the graphitization of the CNT walls is better than the results reported on this kind of template-based CNT arrays, although it is not so good as that of multiwalled carbon nanotubes (MWCNTs) synthesized by catalysis. CNTs synthesized using acetylene as reactant gas show much less graphitization than those prepared using ethanol by comparing the results of HRTEM and Raman spectroscopy. The etching effects of decomposed OH radicals on the amorphous carbon and the roughness of AAO nano-channel arrays on the CNTs growth were employed to explain the graphitization and growth of the CNTs.