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Sample records for aluminum oxide films

  1. Transparent Aluminum Oxide Films by Edge Anodization

    Science.gov (United States)

    Stott, Jonathan; Greenwood, Thomas; Winn, David

    In this paper we present our recent work on manufacturing thin (3 - 5 μm) films of porous aluminum(III) oxide [PAO] using a novel edge-anodization technique. With this modified anodization process, we are able to create transparent PAO films on top of insulating substrates such as glass or plastic. By controlling the processing parameters, the index of refraction of PAO films can be engineered to match the substrate, which gives us a durable reflection-free and scratch-resistant coating over conventional optics or LCD displays. Eventually we hope to create ordered porous aluminum oxide cladding around an optical fiber core, which could have a number of interesting optical properties if the pore spacing can be matched to the wavelength of light in the fiber. This work was funded by Fairfield University startup funding.

  2. Carbon contaminant in the ion processing of aluminum oxide film

    International Nuclear Information System (INIS)

    Chaug, Y.; Roy, N.

    1989-01-01

    Ion processing can induce contamination on the bombarded surface. However, this process is essential for the microelectronics device fabrication. Auger electron spectroscopy has been used to study the simultaneous deposition of carbon impurity during ion bombardment of magnetron rf-sputtering deposited aluminum oxide film. Ion bombardment on aluminum oxide results in a preferential removal of surface oxygen and a formation of a metastable state of aluminum suboxide. Cosputtered implanted carbon contaminant appears to have formed a new state of stoichiometry on the surface of the ion bombarded aluminum oxide and existed as an aluminum carbide. This phase has formed due to the interaction of the implanted carbon and the aluminum suboxide. The Ar + ion sputter etching rate is reduced for the carbon contaminated oxide. The electrical resistance of the aluminum oxide between two gold strips has been measured. It is found that the electrical resistance is also reduced due to the formation of the new stoichiometry on the surface

  3. Optical properties of aluminum oxide thin films and colloidal nanostructures

    International Nuclear Information System (INIS)

    Koushki, E.; Mousavi, S.H.; Jafari Mohammadi, S.A.; Majles Ara, M.H.; Oliveira, P.W. de

    2015-01-01

    In this work, we prepared thin films of aluminum oxide (Al 2 O 3 ) with different thicknesses, using a wet chemical process. The Al 2 O 3 nanoparticles with an average size of 40 nm were dispersed in water and deposited on soda glass substrates. The morphology of the resulting thin films was characterized by means of scanning electron microscopy. The optical properties of the thin films were studied by measuring reflectance and transmittance. A theoretical description of the reflection and transmission mechanism of the films was developed by measuring the thickness and spectral behavior of the refractive index. Numerical evaluations were used for modeling the optical spectra of the thin films of alumina. By fitting numerical curves to the experimental data, the extinction coefficient and refractive index were obtained. The dielectric constant and optical properties of the colloidal solution of the particles were also studied. - Highlights: • Optical properties of alumina thin films and nanocolloids were investigated. • New theoretical depiction of transmission and reflection from the thin films was evaluated. • Interference in reflection from thin films was studied. • Real and imaginary parts of the dielectric constant for alumina nanoparticles were calculated. • Using a novel method, evaluation of optical dispersion and UV–visible absorption were performed.

  4. Optical properties of aluminum oxide thin films and colloidal nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Koushki, E., E-mail: ehsan.koushki@yahoo.com [Photonics Laboratory, Physics Faculty, Kharazmi University, Tehran (Iran, Islamic Republic of); Physics Department, Hakim Sabzevari University, Sabzevar (Iran, Islamic Republic of); Mousavi, S.H. [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany); Jafari Mohammadi, S.A. [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany); Department of Chemistry, College of Science, Islamshahr Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Majles Ara, M.H. [Photonics Laboratory, Physics Faculty, Kharazmi University, Tehran (Iran, Islamic Republic of); Oliveira, P.W. de [INM—Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken (Germany)

    2015-10-01

    In this work, we prepared thin films of aluminum oxide (Al{sub 2}O{sub 3}) with different thicknesses, using a wet chemical process. The Al{sub 2}O{sub 3} nanoparticles with an average size of 40 nm were dispersed in water and deposited on soda glass substrates. The morphology of the resulting thin films was characterized by means of scanning electron microscopy. The optical properties of the thin films were studied by measuring reflectance and transmittance. A theoretical description of the reflection and transmission mechanism of the films was developed by measuring the thickness and spectral behavior of the refractive index. Numerical evaluations were used for modeling the optical spectra of the thin films of alumina. By fitting numerical curves to the experimental data, the extinction coefficient and refractive index were obtained. The dielectric constant and optical properties of the colloidal solution of the particles were also studied. - Highlights: • Optical properties of alumina thin films and nanocolloids were investigated. • New theoretical depiction of transmission and reflection from the thin films was evaluated. • Interference in reflection from thin films was studied. • Real and imaginary parts of the dielectric constant for alumina nanoparticles were calculated. • Using a novel method, evaluation of optical dispersion and UV–visible absorption were performed.

  5. Electrophoretic deposition of PTFE particles on porous anodic aluminum oxide film and its tribological properties

    International Nuclear Information System (INIS)

    Zhang, Dongya; Dong, Guangneng; Chen, Yinjuan; Zeng, Qunfeng

    2014-01-01

    Polytetrafluoroethylene (PTFE) composite film was successfully fabricated by depositing PTFE particles into porous anodic aluminum oxide film using electrophoretic deposition (EPD) process. Firstly, porous anodic aluminum oxide film was synthesized by anodic oxidation process in sulphuric acid electrolyte. Then, PTFE particles in suspension were directionally deposited into the porous substrate. Finally, a heat treatment at 300 °C for 1 h was utilized to enhance PTFE particles adhesion to the substrate. The influence of anodic oxidation parameters on the morphology and micro-hardness of the porous anodic aluminum oxide film was studied and the PTFE particles deposited into the pores were authenticated using energy-dispersive spectrometer (EDS) and scanning electron microscopy (SEM). Tribological properties of the PTFE composite film were investigated under dry sliding. The experimental results showed that the composite film exhibit remarkable low friction. The composite film had friction coefficient of 0.20 which deposited in 15% PTFE emulsion at temperature of 15 °C and current density of 3 A/dm 2 for 35 min. In addition, a control specimen of porous anodic aluminum oxide film and the PTFE composite film were carried out under the same test condition, friction coefficient of the PTFE composite film was reduced by 60% comparing with the control specimen at 380 MPa and 100 mm/s. The lubricating mechanism was that PTFE particles embedded in porous anodic aluminum oxide film smeared a transfer film on the sliding path and the micro-pores could support the supplement of solid lubricant during the sliding, which prolonged the lubrication life of the aluminum alloys.

  6. Use of aluminum oxide as a permeation barrier for producing thin films on aluminum substrates

    Energy Technology Data Exchange (ETDEWEB)

    Provo, James L., E-mail: jlprovo@verizon.net [Consultant, J. L. Provo Consulting, Trinity, Florida 34655-7179 (United States)

    2016-07-15

    Aluminum has desirable characteristics of good thermal properties, good electrical characteristics, good optical properties, and the characteristic of being nonmagnetic and having a low atomic weight (26.98 g atoms), but because of its low melting point (660 °C) and ability as a reactive metal to alloy with most common metals in use, it has been ignored as a substrate material for use in processing thin films. The author developed a simple solution to this problem, by putting a permeation barrier of alumina (Al{sub 2}O{sub 3}) onto the surface of pure Al substrates by using a standard chemical oxidation process of the surface (i.e., anodization), before additional film deposition of reactive metals at temperatures up to 500 °C for 1-h, without the formation of alloys or intermetallic compounds to affect the good properties of Al substrates. The chromic acid anodization process used (MIL-A-8625) produced a film barrier of ∼(500–1000) nm of alumina. The fact that refractory Al{sub 2}O{sub 3} can inhibit the reaction of metals with Al at temperatures below 500 °C suggests that Al is a satisfactory substrate if properly oxidized prior to film deposition. To prove this concept, thin film samples of Cr, Mo, Er, Sc, Ti, and Zr were prepared on anodized Al substrates and studied by x-ray diffraction, Rutherford ion back scattering, and Auger/argon sputter surface profile analysis to determine any film substrate interactions. In addition, a major purpose of our study was to determine if ErD{sub 2} thin films could be produced on Al substrates with fully hydrided Er films. Thus, a thin film of ErD{sub 2} on an anodized Al substrate was prepared and studied, with and without the alumina permeation barrier. Films for study were prepared on 1.27 cm diameter Al substrates with ∼500 nm of the metals studied after anodization. Substrates were weighed, cleaned, and vacuum fired at 500 °C prior to use. The Al substrates were deposited using standard electron

  7. A study on the growth mechanism and the process parameters controlling aluminum oxide thin films deposition by pulsed pressure MOCVD

    OpenAIRE

    Murthy, Hari; Miya, S. S; Krumdieck, Susan

    2016-01-01

    Aluminum oxide thin films were deposited on silicon substrates under different deposition conditions using pulse pressure metal organic chemical vapour deposition (PP-MOCVD). The current study investigates into the growth mechanism of the deposited film and the control of the film morphology by varying the processing parameters of PP-MOCVD - choice of solvent, concentration, and presence of a shield. Aluminum sec-butoxide (ASB) was used as the aluminum source while hexane and toluene were use...

  8. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    KAUST Repository

    Nayak, Pradipta K.

    2013-07-18

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  9. Depth Profiling Analysis of Aluminum Oxidation During Film Deposition in a Conventional High Vacuum System

    Science.gov (United States)

    Kim, Jongmin; Weimer, Jeffrey J.; Zukic, Muamer; Torr, Douglas G.

    1994-01-01

    The oxidation of aluminum thin films deposited in a conventional high vacuum chamber has been investigated using x-ray photoelectron spectroscopy (XPS) and depth profiling. The state of the Al layer was preserved by coating it with a protective MgF2 layer in the deposition chamber. Oxygen concentrations in the film layers were determined as a function of sputter time (depth into the film). The results show that an oxidized layer is formed at the start of Al deposition and that a less extensively oxidized Al layer is deposited if the deposition rate is fast. The top surface of the Al layer oxidizes very quickly. This top oxidized layer may be thicker than has been previously reported by optical methods. Maximum oxygen concentrations measured by XPS at each Al interface are related to pressure to rate ratios determined during the Al layer deposition.

  10. In-Line Sputtered Gallium and Aluminum Codoped Zinc Oxide Films for Organic Solar Cells

    Directory of Open Access Journals (Sweden)

    Shang-Chou Chang

    2014-01-01

    Full Text Available Gallium and aluminum codoped zinc oxide (GAZO films were deposited at different temperatures by in-line sputtering. Aluminum is thermally unstable compared to other elements in GAZO films. The grains of GAZO films increase with deposition temperature. Coalescence between grains was observed for GAZO films deposited at 250°C. The deposition temperature exhibits positive influence on crystallinity, and electrical and optical properties of GAZO films. The carrier concentration and mobility of GAZO films increase, while the electrical resistivity of GAZO films decreases with deposition temperature. The average optical transmittance of GAZO films rises with deposition temperature. In-line sputtering demonstrates a potential method with simplicity, mass production, and large-area deposition to produce GAZO films with good electrical and optical quality. The electrical resistivity of 4.3 × 10−4 Ω cm and the average optical transmittance in the visible range from 400 to 800 nm of 92% can be obtained for GAZO films deposited at 250°C. The hybrid organic solar cells (OSC were fabricated on GAZO-coated glass substrates. Blended poly(3-hexylthiophene (P3HT and [6,6]-phenyl C61 butyric acid methyl ester (PCBM were the photoactive materials in OSC. The power conversion efficiency of OSC is 0.65% for the OSC with the 250°C deposited GAZO electrode.

  11. Synthesis and properties of iridescent Zn-containing anodic aluminum oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Xiaoxuan; Sun, Huiyuan, E-mail: huiyuansun@126.com; Liu, Lihu; Hou, Xue; Liu, Huiyuan

    2015-07-01

    A simple method of fabricating Zn-containing anodic aluminum oxide films for multifunctional anticounterfeit technology is reported. The resulting membranes were characterized with UV–vis illumination studies, natural light illumination color experiments, and electron microscopy analysis. Deposition of Zn in the nanopore region can enhance the color saturation of the thin alumina film with different colors dramatically. Both the anodization time and etching time have great influence on the structural color. The mechanisms for the emergence of this phenomenon are discussed and theoretical analysis further demonstrates the experimental results. - Highlights: • Iridescent PAA@Zn nanocomposite films were successfully fabricated. • A simple organics-assisted method is applied to making a series of fancy and multicolor patterns. • The color varies with the angle of incidence of the light used to view the film as is expected with Bragg–Snell formula. • Such colored films could be used in multifunctional anti-counterfeiting applications.

  12. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    Science.gov (United States)

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  13. Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride.

    Science.gov (United States)

    Kischkat, Jan; Peters, Sven; Gruska, Bernd; Semtsiv, Mykhaylo; Chashnikova, Mikaela; Klinkmüller, Matthias; Fedosenko, Oliana; Machulik, Stephan; Aleksandrova, Anna; Monastyrskyi, Gregorii; Flores, Yuri; Masselink, W Ted

    2012-10-01

    The complex refractive index components, n and k, have been studied for thin films of several common dielectric materials with a low to medium refractive index as functions of wavelength and stoichiometry for mid-infrared (MIR) wavelengths within the range 1.54-14.29 μm (700-6500 cm(-1)). The materials silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, and titanium oxide are prepared using room temperature reactive sputter deposition and are characterized using MIR variable angle spectroscopic ellipsometry. The investigation shows how sensitive the refractive index functions are to the O2 and N2 flow rates, and for which growth conditions the materials deposit homogeneously. It also allows conclusions to be drawn on the degree of amorphousness and roughness. To facilitate comparison of the materials deposited in this work with others, the index of refraction was also determined and provided for the near-IR and visible ranges of the spectrum. The results presented here should serve as a useful information base for designing optical coatings for the MIR part of the electromagnetic spectrum. The results are parameterized to allow them to be easily used for coating design.

  14. An anode with aluminum doped on zinc oxide thin films for organic light emitting devices

    International Nuclear Information System (INIS)

    Xu Denghui; Deng Zhenbo; Xu Ying; Xiao Jing; Liang Chunjun; Pei Zhiliang; Sun Chao

    2005-01-01

    Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150-bar o C in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt% in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was 4x10 -4 Ωcm and the average transmission in the visible range 400-700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm 2

  15. The influence of a thin gold film on the optical spectral characteristics of a porous anodic aluminum-oxide membrane

    Science.gov (United States)

    Ushakov, N. M.; Vasilkov, M. Yu.; Fedorov, F. S.

    2017-07-01

    We have experimentally studied how a thin mesostructured gold film, deposited onto one side of a porous anodic aluminum-oxide membrane, influences its optical spectral characteristics in a 200-900 nm wavelength range. It is established that the gold film only modifies the spectral characteristics of the composite membrane at light wavelengths above 500 nm. The presence of a thin gold film ensures the surface conductivity of membrane on a level of 3.4 × 106 Ω-1 m-1, retains optical transparency within 10-20%, leads to the appearance of anomalous dispersion in the long-wavelength part of the transmission spectrum, and reduces the bandgap width from 5.61 eV (in anodic aluminum oxide) to 4.51 eV (in the composite). The obtained anodic aluminum-oxide membranes with thin gold films can be used as transparent conducting electrodes in optoelectronic devices with large light transmitter/receiver active areas.

  16. Aluminum-doped zinc oxide thin films grown on various substrates using facing target sputtering system

    Science.gov (United States)

    Kim, Hwa-Min; Lee, Chang Hyun; Shon, Sun Young; Kim, Bong Hwan

    2017-11-01

    Aluminum-doped zinc oxide (AZO) films were fabricated on various substrates, such as glass, polyethylene naphthalate (PEN), and polyethylene terephthalate (PET), at room temperature using a facing target sputtering (FTS) system with hetero ZnO and Al2O3 targets, and their electrical and optical properties were investigated. The AZO film on glass exhibited compressive stress while the films on the plastic substrates showed tensile stress. These stresses negatively affected the crystalline quality of the AZO films, and it is suggested that the poor crystalline quality of the films may be related to the neutral Al-based defect complexes formed in the films; these complexes act as neutral impurity scattering centers. AZO films with good optoelectronic properties could be formed on the glass and plastic substrates by the FTS technique using the hetero targets. The AZO films deposited on the glass, PEN, and PET substrates showed very low resistivities, of 5.0 × 10-4 Ω cm, 7.0 × 10-4 Ω cm, and 7.4 × 10-4 Ω cm, respectively. Further, the figure merit of the AZO film formed on the PEN substrate in the visible range (400-700 nm) was significantly higher than that of the AZO film on PET and similar to that of the AZO film on glass. Finally, the average transmittances of the films in the visible range (400-700 nm) were 83.16% (on glass), 76.3% (on PEN), and 78.16% (on PET).

  17. Characterization of aluminum oxide films on p- type silicon substrate prepared by glass assisted CO2 laser technique

    Science.gov (United States)

    Hassan, Y. M.; Saied, E. A.

    2014-01-01

    Aluminum oxide (Al2O3) films were deposited on p- type Si substrate using glass assisted CO2 laser technique. Aluminum trichloride AlCl3 and O2 were used as aluminum and oxygen sources respectively and Ar was used as a carrier gas for AlCl3. The films were deposited at different substrate temperatures ranging from 480 to 830 °C. The effect of thermal annealing on low deposited substrate temperature films was carried out in argon environment. Chemical compositions of the films were studied by using Fourier transform infrared (FTIR) spectroscopy. FTIR spectra showed some characteristic bands of aluminum silicate corresponding to bending and stretching bonds of aluminum oxide in the range 650-750 and 750-850 cm-1 respectively. Energy dispersive X-ray showed presence of aluminum in the films. Capacitance-voltage (C-V) measurements were carried out on MOS devices made of these films. Results indicated density of interface traps D it in the range 1012-1013 eV-1 cm-2. The current density-voltage (J-V ) curves of devices suggested Poole-Frenkel and Shcottcky emission mechanisms for carrier transport in MOS devices.

  18. Electrodeposited Reduced Graphene Oxide Films on Stainless Steel, Copper, and Aluminum for Corrosion Protection Enhancement

    Directory of Open Access Journals (Sweden)

    Abdulkareem Mohammed Ali Al-Sammarraie

    2017-01-01

    Full Text Available The enhancement of corrosion protection of metals and alloys by coating with simple, low cost, and highly adhered layer is still a main goal of many workers. In this research graphite flakes converted into graphene oxide using modified Hammers method and then reduced graphene oxide was electrodeposited on stainless steel 316, copper, and aluminum for corrosion protection application in seawater at four temperatures, namely, 20, 30, 40, and 50°C. All corrosion measurements, kinetics, and thermodynamics parameters were established from Tafel plots using three-electrode potentiostat. The deposited films were examined by FTIR, Raman, XRD, SEM, and AFM techniques; they revealed high percentages of conversion to the few layers of graphene with confirmed defects.

  19. Adsorption of Atoms of 3 d Metals on the Surfaces of Aluminum and Magnesium Oxide Films

    Science.gov (United States)

    Ramonova, A. G.; Kibizov, D. D.; Kozyrev, E. N.; Zaalishvili, V. B.; Grigorkina, G. S.; Fukutani, K.; Magkoev, T. T.

    2018-01-01

    The adsorption and formation of submonolayer structures of Ti, Cr, Fe, Ni, Cu on the surfaces of aluminum and magnesium oxide films formed on Mo(110) under ultrahigh vacuum conditions are studied via X-ray, ultraviolet photo-, and Auger electron spectroscopy (XPS, UVES, AES); spectroscopy of energy losses of high-resolution electrons (SELHRE); spectroscopy of the backscattering of low-energy ions (SBSLEI); infrared absorption spectroscopy (IAS); and the diffraction of slow electrons (DSE). Individual atoms and small clusters of all the investigated metals deposited on oxides acquire a positive charge, due presumably to interaction with surface defects. As the concentration of adatoms increases when the adsorption centers caused by defects are filled, charge transfer from adatoms to substrates is reduced. This is accompanied by further depolarization caused by the lateral interaction of adatoms.

  20. Tensile strain effect in ferroelectric perovskite oxide thin films on spinel magnesium aluminum oxide substrate

    Science.gov (United States)

    Zhou, Xiaolan

    Ferroelectrics are used in FeRAM (Ferroelectric random-access memory). Currently (Pb,Zr)TiO3 is the most common ferroelectric material. To get lead-free and high performance ferroelectric material, we investigated perovskite ferroelectric oxides (Ba,Sr)TiO3 and BiFeO3 films with strain. Compressive strain has been investigated intensively, but the effects of tensile strain on the perovskite films have yet to be explored. We have deposited (Ba,Sr)TiO3, BiFeO3 and related films by pulsed laser deposition (PLD) and analyzed the films by X-ray diffractometry (XRD), atomic force microscopy (AFM), etc. To obtain inherently fully strained films, the selection of the appropriate substrates is crucial. MgAl2O4 matches best with good quality and size, yet the spinel structure has an intrinsic incompatibility to that of perovskite. We introduced a rock-salt structure material (Ni 1-xAlxO1+delta) as a buffer layer to mediate the structural mismatch for (Ba,Sr)TiO3 films. With buffer layer Ni1-xAlxO1+delta, we show that the BST films have high quality crystallization and are coherently epitaxial. AFM images show that the films have smoother surfaces when including the buffer layer, indicating an inherent compatibility between BST-NAO and NAO-MAO. In-plane Ferroelectricity measurement shows double hysteresis loops, indicating an antiferroelectric-like behavior: pinned ferroelectric domains with antiparallel alignments of polarization. The Curie temperatures of the coherent fully strained BST films are also measured. It is higher than 900°C, at least 800°C higher than that of bulk. The improved Curie temperature makes the use of BST as FeRAM feasible. We found that the special behaviors of ferroelectricity including hysteresis loop and Curie temperature are due to inherent fully tensile strain. This might be a clue of physics inside ferroelectric stain engineering. An out-of-plane ferroelectricity measurement would provide a full whole story of the tensile strain. However, a

  1. Microstructural Effects on the Reactivity of Nano-Aluminum/Iodine (V) Oxide Films

    Science.gov (United States)

    Little, Brian; Langhals, Jarred; Emery, Sam; Martinez, Lucas; Welle, Eric; Lindsay, Michael

    2015-06-01

    Recent efforts investigating the self-ignition mechanism of nanoaluminum blended with iodine (V) oxide in the form of powders with and without additives suggests that ignition begins below the decomposition point of either reactant and takes place at the alumina shell surrounding the aluminum nanoparticle. As observed in previous studies of powder composites, microstructural features such as particle morphology are expected to strongly influence properties that govern the combustion behavior of this energetic material (EM). In this study, highly reactive composites containing amorphous and/or crystalline iodine oxide and nano-sized Al was blended with an additive and deposited as films. Physiochemical techniques such as thermal gravimetric analysis, scanning calorimetry, X-ray diffraction, electron microscopy, high-speed imaging, time of arrival data via photodiodes and planar doppler velocimetry were employed to characterize these EMs with emphasis on correlating the reaction rate (burn rate) with inherent microstructural features (porosity, thickness, TMD, etc). This work was a continuation of efforts to probe the self-ignition mechanism of Al-iodine (V) oxide composites.

  2. Influence of the surface pre-treatment of aluminum on the processes of formation of cerium oxides protective films

    International Nuclear Information System (INIS)

    Andreeva, R; Stoyanova, E; Stoychev, D; Tsanev, A

    2016-01-01

    It is known that there is special interest in the contemporary investigations on conversion treatment of aluminum aimed at promoting its corrosion stability, which is focused on electrolytes on the basis of salts of metals belonging to the group of rare-earth elements. Their application is especially attractive, as it enables a successful substitution of the presently applied highly efficient, but at the same time toxic Cr 6+ -containing electrolytes. The present paper presents a study on the influence of the preliminary alkaline activation and acidic de-oxidation of the aluminum surface on the processes of immersion formation of protective cerium oxides films on Al 1050. The results obtained show that their deposition from simple electrolytes (containing only salts of Ce 3+ ions) on the Al surface, treated only in alkaline solution, occurs at a higher rate, which leads to preparing thicker oxide films having a better protective ability. In the cases when the formation of oxide films is realized in a complex electrolyte (containing salts of Ce 3+ and Cu 2+ ions), better results are obtained with respect to the morphology and protective action of cerium oxides film on samples that have been consecutively activated in alkaline solution and deoxidized in acidic solution. Electrochemical investigations were carried out in a model corrosion medium (0.1 M NaCl); it was shown that the cerium protective films, deposited by immersion, have a cathodic character with regard to the aluminum support and inhibit the occurrence of the depolarizing corrosion process -- the reaction of oxygen reduction. (paper)

  3. Interfacial interactions of poly(ether ketone ketone) polymer coatings onto oxide-free phosphate films on an aluminum surface

    International Nuclear Information System (INIS)

    Asunskis, A. L.; Sherwood, P. M. A.

    2007-01-01

    This article continues a series of papers that shows how thin (10 nm or less) oxide-free phosphate films can be formed on a number of metals. The films formed have potential as corrosion resistant films. Previous papers have shown that it is possible to extend the range of the surface coatings that can be formed by placing a thin polymer layer over the phosphate layer. In this work it is shown how the water insoluble polymer poly(ether ketone ketone) (PEKK) can be placed over a thin oxide-free phosphate film on aluminum metal. The surface and the interfaces involved were studied by valence band and core level x-ray photoelectron spectroscopy. Difference spectra in the valence band region were used to show that there is a chemical interaction between the PEKK and phosphate thin films on the aluminum metal. Three different phosphate film compositions were studied using different phosphorous containing acids, H 3 PO 4 , H 3 PO 3 , and H 3 PO 2 . This type of interaction illustrates the potential of phosphates to act as adhesion promoters. The valence band spectra are interpreted by calculations

  4. Charge dynamics in aluminum oxide thin film studied by ultrafast scanning electron microscopy.

    Science.gov (United States)

    Zani, Maurizio; Sala, Vittorio; Irde, Gabriele; Pietralunga, Silvia Maria; Manzoni, Cristian; Cerullo, Giulio; Lanzani, Guglielmo; Tagliaferri, Alberto

    2018-04-01

    The excitation dynamics of defects in insulators plays a central role in a variety of fields from Electronics and Photonics to Quantum computing. We report here a time-resolved measurement of electron dynamics in 100 nm film of aluminum oxide on silicon by Ultrafast Scanning Electron Microscopy (USEM). In our pump-probe setup, an UV femtosecond laser excitation pulse and a delayed picosecond electron probe pulse are spatially overlapped on the sample, triggering Secondary Electrons (SE) emission to the detector. The zero of the pump-probe delay and the time resolution were determined by measuring the dynamics of laser-induced SE contrast on silicon. We observed fast dynamics with components ranging from tens of picoseconds to few nanoseconds, that fits within the timescales typical of the UV color center evolution. The surface sensitivity of SE detection gives to the USEM the potential of applying pump-probe investigations to charge dynamics at surfaces and interfaces of current nano-devices. The present work demonstrates this approach on large gap insulator surfaces. Copyright © 2018 Elsevier B.V. All rights reserved.

  5. Synthesis of oxide-free aluminum nanoparticles for application to conductive film

    Science.gov (United States)

    Jong Lee, Yung; Lee, Changsoo; Lee, Hyuck Mo

    2018-02-01

    Aluminum nanoparticles are considered promising as alternatives to conventional ink materials, replacing silver and copper nanoparticles, due to their extremely low cost and low melting temperature. However, a serious obstacle to realizing their use as conductive ink materials is the oxidation of aluminum. In this research, we synthesized the oxide-free aluminum nanoparticles using catalytic decomposition and an oleic acid coating method, and these materials were applied to conductive ink for the first time. The injection time of oleic acid determines the size of the aluminum nanoparticles by forming a self-assembled monolayer on the nanoparticles instead of allowing the formation of an oxide phase. Fabricated nanoparticles were analyzed by transmission electron microscopy and x-ray photoelectron spectroscopy to verify their structural and chemical composition. In addition, conductive inks made of these nanoparticles exhibit electrical properties when they are sintered at over 300 °C in a reducing atmosphere. This result shows that aluminum nanoparticles can be used as an alternative conductive material in printed electronics and can solve the cost issues associated with noble metals.

  6. Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

    KAUST Repository

    Abutaha, Anas I.

    2013-02-06

    We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.

  7. Effects of starting material of aluminum doped zinc oxide underlayer on the electric properties of palladium doped silver film

    Science.gov (United States)

    Oyama, T.; Maekawa, M.; Yanagisawa, T.

    2003-07-01

    Crystallographic and electric properties of a palladium doped silver (Ag-Pd) layer formed on an aluminum doped zinc oxide (AZO) film in the multilayer system of Ag-Pd(10.5 nm)/AZO(42 nm)/glass were investigated. All of the films in this study were deposited by dc magnetron sputtering. Two kinds of sputtering targets, aluminum doped zinc metal (AZ) and AZO, were used for the deposition of AZO films. The AZ target was sputtered in an oxygen or carbon dioxide atmosphere whereas the AZO target was sputtered in an argon or argon/oxygen atmosphere. The Ag-Pd layers were deposited under the fixed sputtering condition. From x-ray diffraction patterns it was found that the most developed Ag(111) peak appeared in the case of the Ag-Pd film on the AZO layer deposited from the AZ metal target with oxygen. Atomic force microscope observation revealed that the smallest surface roughness was obtained in this case. Electrical resistivity of the Ag-Pd layer changed by up to 17% depending on deposition conditions and the target materials of the underlayer. The Ag-Pd film deposited on the AZO layer from the AZ target in an oxygen atmosphere also showed the lowest resistivity of 7.1×10-6 Ω cm. The smallest refractive index of Ag-Pd film was shown by the same sample from an analysis using spectroscopic ellipsometry (SE). Deposition of a thin metal (Zn-Al) overlayer on Ag-Pd/AZO/glass increased the overall resistivity of the multilayer. This may imply the diffusion of zinc atoms into the Ag-Pd layer, however, the resistivity recovery was observed after some storage time, which suggests the effect of an electron scattering at the surface.

  8. Fabrication of Polymeric Antireflection Film Manufactured by Anodic Aluminum Oxide Template on Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Jenn-Kai Tsai

    2017-03-01

    Full Text Available In this study, high energy conversion efficient dye-sensitized solar cells (DSSCs were successfully fabricated by attaching a double anti-reflection (AR layer, which is composed of a subwavelength moth-eye structured polymethyl methacrylate (PMMA film and a polydimethylsiloxane (PDMS film. An efficiency of up to 6.79% was achieved. The moth-eye structured PMMA film was fabricated by using an anodic aluminum oxide (AAO template which is simple, low-cost and scalable. The nano-pattern of the AAO template was precisely reproduced onto the PMMA film. The photoanode was composed of Titanium dioxide (TiO2 nanoparticles (NPs with a diameter of 25 nm deposited on the fluorine-doped tin oxide (FTO glass substrate and the sensitizer N3. The double AR layer was proved to effectively improve the short-circuit current density (JSC and conversion efficiency from 14.77 to 15.79 mA/cm2 and from 6.26% to 6.79%, respectively.

  9. EFFECT OF ANION, PH, AND TEMPERATURE ON THE DISSOLUTION BEHAVIOR OF ALUMINUM OXIDE FILMS.

    Energy Technology Data Exchange (ETDEWEB)

    LEE,H.; ISAACS,H.S.

    2001-09-02

    The growth and dissolution behavior of oxide film on abraded pure Al has been investigated using cyclic polarization and has been found to be highly dependent on solution chemistry and temperature. The nature of the anions, borate, chromate, phosphate, and sulfate, at pH 3 to 11, and temperatures 0 to 60 C were examined. In near neutral solutions the dissolution behavior was greatly affected by each anion. In borate and chromate solutions at near neutral pH and room temperature, the currents continued to decrease with each subsequent cycle due to oxide thickening. In contrast, a significant rate of oxide dissolution occurred to produce reproducible repetitive curves during subsequent cycles in a phosphate and sulfate. Sulfate also produced a distinctly different mode during high field oxide growth. In increasing acidic (pH < 4) or basic (pH >9) solutions the oxide dissolution rate increased rapidly. The oxide dissolution rate was always enhanced with increasing temperature. At high pH (>9) or elevated temperature (60 C), a current maximum was observed in chromate, due to a diffusion controlled monochromate ion enhanced dissolution reaction at the oxide/solution interface.

  10. Reaction of Tri-methylaluminum on Si (001) Surface for Initial Aluminum Oxide Thin-Film Growth

    International Nuclear Information System (INIS)

    Kim, Dae Hee; Kim, Dae Hyun; Jeong, Yong Chan; Seo, Hwa Il; Kim, Yeong Cheol

    2010-01-01

    We studied the reaction of tri-methylaluminum (TMA) on hydroxyl (OH)-terminated Si (001) surfaces for the initial growth of aluminum oxide thin-films using density functional theory. TMA was adsorbed on the oxygen atom of OH due to the oxygen atom's lone pair electrons. The adsorbed TMA reacted with the hydrogen atom of OH to produce a di-methylaluminum group (DMA) and methane with an energy barrier of 0.50 eV. Low energy barriers in the range of 0 - 0.11 eV were required for DMA migration to the inter-dimer, intra-dimer, and inter-row sites on the surface. A unimethylaluminum group (UMA) was generated at each site with low energy barriers in the range of 0.21 - 0.25 eV. Among the three sites, the inter-dimer site was the most probable for UMA formation

  11. Dielectric breakdown of ultrathin aluminum oxide films induced by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Magtoto, N. P.; Niu, C.; Ekstrom, B. M.; Addepalli, S.; Kelber, J. A.

    2000-01-01

    Dielectric breakdown of 7-Aa-thick Al 2 O 3 (111) films grown on Ni 3 Al(111) under ultrahigh vacuum conditions is induced by increasing the bias voltage on the scanning tunneling microscopy tip under constant current feedback. Breakdown is marked by the precipitous retreat of the tip from the surface, and the formation of an elevated feature in the scanning tunneling microscopy image, typically greater than 5 nm high and ∼100 nm in diameter. Constant height measurements performed at tip/sample distances of 1 nm or less yield no tip/substrate physical interaction, indicating that such features do not result from mass transport. Consistent with this, current/voltage measurements within the affected regions indicate linear behavior, in contrast to a band gap of 1.5 eV observed at unaffected regions of the oxide surface. A threshold electric field value of 11±1 MV cm -1 is required to induce breakdown, in good agreement with extrapolated values from capacitance measurements on thicker oxides. (c) 2000 American Institute of Physics

  12. Reactive ion assisted deposition of aluminum oxynitride thin films

    International Nuclear Information System (INIS)

    Hwangbo, C.K.; Lingg, L.J.; Lehan, J.P.; Macleod, H.A.; Suits, F.

    1989-01-01

    Optical properties, stoichiometry, chemical bonding states, and crystal structure of aluminum oxynitride (AlO/sub x/N/sub y/) thin films prepared by reactive ion assisted deposition were investigated. The results show that by controlling the amount of reactive gases the refractive index of aluminum oxynitride films at 550 nm is able to be varied from 1.65 to 1.83 with a very small extinction coefficient. Variations of optical constants and chemical bonding states of aluminum oxynitride films are related to the stoichiometry. From an x-ray photoelectron spectroscopy analysis it is observed that our aluminum oxynitride film is not simply a mixture of aluminum oxide and aluminum nitride but a continuously variable compound. The aluminum oxynitride films are amorphous from an x-ray diffraction analysis. A rugate filter using a step index profile of aluminum oxynitride films was fabricated by nitrogen ion beam bombardment of a growing Al film with backfill oxygen pressure as the sole variation. This filter shows a high resistivity to atmospheric moisture adsorption, suggesting that the packing density of aluminum oxynitride films is close to unity and the energetic ion bombardment densifies the film as well as forming the compound

  13. Thermal Effect on the Structural, Electrical, and Optical Properties of In-Line Sputtered Aluminum Doped Zinc Oxide Films Explored with Thermal Desorption Spectroscopy

    Directory of Open Access Journals (Sweden)

    Shang-Chou Chang

    2014-01-01

    Full Text Available This work investigates the thermal effect on the structural, electrical, and optical properties of aluminum doped zinc oxide (AZO films. The AZO films deposited at different temperatures were measured using a thermal desorption system to obtain their corresponding thermal desorption spectroscopy (TDS. In addition to obtaining information of thermal desorption, the measurement of TDS also has the effect of vacuum annealing on the AZO films. The results of measuring TDS imply part of the doped aluminum atoms do not stay at substituted zinc sites in AZO films. The (002 preferential direction of the AZO films in X-ray diffraction spectra shifts to a lower angle after measurement of TDS. The grain size grows and surface becomes denser for all AZO films after measurement of TDS. The carrier concentration, mobility, and average optical transmittance increase while the electrical resistivity decreases for AZO films after measurement of TDS. These results indicate that the AZO films deposited at 200°C are appropriate selections if the AZO films are applied in device fabrication of heat-produced process.

  14. The effect of Bi3+ and Li+ co-doping on the luminescence characteristics of Eu3+-doped aluminum oxide films

    International Nuclear Information System (INIS)

    Padilla-Rosales, I.; Martinez-Martinez, R.; Cabañas, G.; Falcony, C.

    2015-01-01

    The incorporation of Bi 3+ and Li + as co-dopants in Eu 3+ -doped aluminum oxide films deposited by the ultrasonic spray pyrolysis technique and its effect on the luminescence characteristics of this material are described. Both Bi 3+ and Li + do not introduce new luminescence features but affect the luminescence intensity of the Eu 3+ related emission spectra as well as the excitation spectra. The introduction of Bi 3+ generates localized states in the aluminum oxide host that result in a quenching of the luminescence intensity, while Li + and Bi 3+ co-doping increase the luminescence intensity of these films. - Highlights: • Li and Bi co-doping increase the luminescence. • Bi creates localized states in the Al 2 O 3 host. • Li was incorporated as a co-activator

  15. The effect of Bi{sup 3+} and Li{sup +} co-doping on the luminescence characteristics of Eu{sup 3+}-doped aluminum oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Padilla-Rosales, I., E-mail: ipadilla@cinvestav.mx [Centro de Investigación y de Estudios Avanzados del IPN, Nanociencias y Nanotecnología, Av. IPN 2508, Col. San Pedro Zacatenco, CP 07360 México D.F. (Mexico); Martinez-Martinez, R. [Instituto de Física y Matemáticas, Universidad Tecnológica de la Mixteca, Carretera a Acatlima Km. 2.5, CP 69000 Huajuapan de León, Oax, México (Mexico); Cabañas, G. [Centro de Investigación y de Estudios Avanzados del IPN, Nanociencias y Nanotecnología, Av. IPN 2508, Col. San Pedro Zacatenco, CP 07360 México D.F. (Mexico); Falcony, C. [Centro de Investigación y de Estudios Avanzados del IPN, Departamento de Física, Av. IPN 2508, Col. San Pedro Zacatenco, CP 07360 México D.F. (Mexico)

    2015-09-15

    The incorporation of Bi{sup 3+} and Li{sup +} as co-dopants in Eu{sup 3+}-doped aluminum oxide films deposited by the ultrasonic spray pyrolysis technique and its effect on the luminescence characteristics of this material are described. Both Bi{sup 3+} and Li{sup +} do not introduce new luminescence features but affect the luminescence intensity of the Eu{sup 3+} related emission spectra as well as the excitation spectra. The introduction of Bi{sup 3+} generates localized states in the aluminum oxide host that result in a quenching of the luminescence intensity, while Li{sup +} and Bi{sup 3+} co-doping increase the luminescence intensity of these films. - Highlights: • Li and Bi co-doping increase the luminescence. • Bi creates localized states in the Al{sub 2}O{sub 3} host. • Li was incorporated as a co-activator.

  16. Ultrafine nanoporous palladium-aluminum film fabricated by citric acid-assisted hot-water-treatment of aluminum-palladium alloy film

    Energy Technology Data Exchange (ETDEWEB)

    Harumoto, Takashi; Tamura, Yohei; Ishiguro, Takashi, E-mail: ishiguro@rs.noda.tus.ac.jp [Department of Materials Science and Technology, Tokyo University of Science, 6-3-1 Niijyuku, Katsushika-ku, Tokyo, 125-8585 (Japan)

    2015-01-15

    Hot-water-treatment has been adapted to fabricate ultrafine nanoporous palladium-aluminum film from aluminum-palladium alloy film. Using citric acid as a chelating agent, a precipitation of boehmite (aluminum oxide hydroxide, AlOOH) on the nanoporous palladium-aluminum film was suppressed. According to cross-sectional scanning transmission electron microscopy observations, the ligament/pore sizes of the prepared nanoporous film were considerably small (on the order of 10 nm). Since this fabrication method only requires aluminum alloy film and hot-water with chelating agent, the ultrafine nanoporous film can be prepared simply and environmentally friendly.

  17. Deposition Mechanism of Aluminum Oxide on Quantum Dot Films at Atmospheric Pressure and Room Temperature

    NARCIS (Netherlands)

    Valdesueiro Gonzalez, D.; Prabhu, M.K.; Guerra Nunez, C.R.; Sandeep, C. S Suchand; Kinge, S.S.; Siebbeles, L.D.A.; de Smet, L.C.P.M.; Meesters, G.M.H.; Kreutzer, M.T.; Houtepen, A.J.; van Ommen, J.R.

    2016-01-01

    Stability of quantum dot (QD) films is an issue of concern for applications in devices such as solar cells, LEDs, and transistors. This paper analyzes and optimizes the passivation of such QD films using gas-phase deposition, resulting in enhanced stability. Crucially, we deposited alumina at

  18. Evolution of the thickness of the aluminum oxide film due to the pH of the cooling water and surface temperature of the fuel elements clad of a nuclear reactor

    International Nuclear Information System (INIS)

    Babiche, Ivan

    2013-01-01

    This paper describes the mechanism of growth of a film of aluminum oxide on an alloy of the same material, which serves as a protective surface being the constituent material of the RP-10 nuclear reactor fuel elements clads. The most influential parameters on the growth of this film are: the pH of the cooling water and the clad surface temperature of the fuel element. For this study, a mathematical model relating the evolution of the aluminum oxide layer thickness over the time, according to the same oxide film using a power law is used. It is concluded that the time of irradiation, the heat flux at the surface of the aluminum material, the speed of the coolant, the thermal conductivity of the oxide, the initial thickness of the oxide layer and the solubility of the protective oxide are parameters affecting in the rate and film formation. (author).

  19. High Transparent Conductive Aluminum-Doped Zinc Oxide Thin Films by Reactive Co-Sputtering (Postprint)

    Science.gov (United States)

    2016-03-30

    studied such as pulse DC magnetron sputtering with an AZO target [1], RF multi- metallic -target reactive magnetron sputtering [2-3], RF and DC magnetron...Experimental details The AZO films were fabricated using reactive magnetron co-sputtering in an O2 and Ar plasma. The two metallic targets, Zn (50 mm...nm using a Varian Cary 5000 UV-Vis-NIR spectrophotometer . The crystal structure of the films was analyzed by a Distribution A. Approved for public

  20. Pull-test adhesion measurements of diamondlike carbon films on silicon carbide, silicon nitride, aluminum oxide, and zirconium oxide

    Energy Technology Data Exchange (ETDEWEB)

    Erck, R.A.; Nichols, F.A. [Argonne National Lab., IL (United States); Dierks, J.F. [North Dakota State Univ., Fargo, ND (United States)

    1993-10-01

    Hydrogenated amorphous carbon films or diamondlike carbon (DLC) films were formed by ion-beam deposition of 400 eV methane (CH{sub 4}) ions on several smooth and rough ceramics, as well as on ceramics coated with a layer of Si and Ti. Adhesion was measured by the pin-pull method. Excellent adhesion was measured for smooth SiC and Si{sub 3}N{sub 4}, but adhesion of DLC to Al{sub 2}O{sub 3} and ZrO{sub 2} was negligible. The use of a Si bonding interlayer produced good adhesion to all the substrates, but a Ti layer was ineffective because bonding between the DLC film and Ti was poor. The presence of surface roughness appeared to greatly increase the measured adhesion in all cases. Bulk thermodynamic calculations are not directly applicable to bonding at the interface. If the standard enthalpy of formation for reaction between CH{sub 4} and substrate is calculated assumpting a carbide or carbon phase is produced, a relation is seen between reaction enthalpy and relative adhesion. Large positive enthalpies are associated with poor adhesion; negative or small positive enthalpies are associated with good adhesion. This relation between enthalpy and adhesion was also observed for DLC deposited on Si. Lack of adhesion to Ti was attributed to inadvertent formation of a surface oxide layer that rendered the enthalpy for reaction with CH{sub 4} strongly positive and similar in magnitude to that for Al{sub 2}O{sub 3} and ZrO{sub 2}.

  1. Relative SHG measurements of metal thin films: Gold, silver, aluminum, cobalt, chromium, germanium, nickel, antimony, titanium, titanium nitride, tungsten, zinc, silicon and indium tin oxide

    Directory of Open Access Journals (Sweden)

    Franklin Che

    Full Text Available We have experimentally measured the surface second-harmonic generation (SHG of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver. Keywords: Surface second-harmonic generation, Nonlinear optics, Metal thin films

  2. Improving the direct electron transfer in monolithic bioelectrodes prepared by immobilization of FDH enzyme on carbon-coated anodic aluminum oxide films

    Directory of Open Access Journals (Sweden)

    Alberto eCastro-Muñiz

    2016-02-01

    Full Text Available The present work reports the preparation of binderless carbon-coated porous films and the study of their performance as monolithic bioanodes. The films were prepared by coating anodic aluminum oxide (AAO films with a thin layer of nitrogen-doped carbon by chemical vapor deposition. The films have cylindrical straight pores with controllable diameter and length. These monolithic films were used directly as bioelectrodes by loading the films with D-fructose dehydrogenase (FDH, an oxidoreductase enzyme that catalyzes the oxidation of D-fructose to 5-keto-D-fructose. The immobilization of the enzymes was carried out by physical adsorption in liquid phase and with an electrostatic attraction method. The latter method takes advantage of the fact that FDH is negatively charged during the catalytic oxidation of fructose. Thus the immobilization was performed under the application of a positive voltage to the CAAO film in a FDH-fructose solution in McIlvaine buffer (pH 5 at 25 ºC. As a result, the FDH modified electrodes with the latter method show much better electrochemical response than that with the conventional physical adsorption method. Due to the singular porous structure of the monolithic films, which consists of an array of straight and parallel nanochannels, it is possible to rule out the effect of the diffusion of the D-fructose into the pores. Thus the improvement in the performance upon using the electrostatic attraction method can be ascribed not only to a higher uptake, but also to a more appropriate molecule orientation of the enzyme units on the surface of the electrodes.

  3. Improvement of Self-Heating of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors Using Al2O3 Barrier Layer

    Science.gov (United States)

    Jian, Li-Yi; Lee, Hsin-Ying; Lin, Yung-Hao; Lee, Ching-Ting

    2018-02-01

    To study the self-heating effect, aluminum oxide (Al2O3) barrier layers of various thicknesses have been inserted between the channel layer and insulator layer in bottom-gate-type indium gallium zinc aluminum oxide (IGZAO) thin-film transistors (TFTs). Each IGZAO channel layer was deposited on indium tin oxide (ITO)-coated glass substrate by using a magnetron radiofrequency cosputtering system with dual targets composed of indium gallium zinc oxide (IGZO) and Al. The 3 s orbital of Al cation provided an extra transport pathway and widened the conduction-band bottom, thus increasing the electron mobility of the IGZAO films. The Al-O bonds were able to sustain the oxygen stability of the IGZAO films. The self-heating behavior of the resulting IGZAO TFTs was studied by Hall measurements on the IGZAO films as well as the electrical performance of the IGZAO TFTs with Al2O3 barrier layers of various thicknesses at different temperatures. IGZAO TFTs with 50-nm-thick Al2O3 barrier layer were stressed by positive gate bias stress (PGBS, at gate-source voltage V GS = 5 V and drain-source voltage V DS = 0 V); at V GS = 5 V and V DS = 10 V, the threshold voltage shifts were 0.04 V and 0.2 V, respectively, much smaller than for the other IGZAO TFTs without Al2O3 barrier layer, which shifted by 0.2 V and 1.0 V when stressed under the same conditions.

  4. Characteristics of low-resistivity aluminum-doped zinc oxide films deposited at room temperature by off-axis radio-frequency sputtering on flexible plastic substrates

    Science.gov (United States)

    Wang, Li-Min; Wang, Chih-Yi; Jheng, Ciao-Ren; Wu, Syu-Jhan; Sai, Chen-Kai; Lee, Ya-Ju; Chiang, Ching-Yu; Shew, Bor-Yuan

    2016-08-01

    The crystalline structure, morphology, composition, electrical transport, and optical properties of aluminum-doped zinc oxide (AZO) films are studied for applications in transparent electronics and optoelectronic devices. AZO thin films of c-axis-oriented growth and with different thickness were deposited on PET flexible plastic substrates at room temperature by rf magnetron sputtering. A larger grain size with a decreased strain ɛ value is observed in a thicker film, while changes in composition for films with different thicknesses are insignificant. Moreover, the resistivity of film decreases with increasing thickness, and the low-temperature electrical transport properties can be described by the scenario of quantum corrections to conductivity. With the room-temperature growth conditions, the resistivity of 4.5 × 10-4 Ω cm, carrier concentration of 6.4 × 1020 cm-3, and transmittance of 80 % for the 1100-nm-thick film are obtained. In addition, the optical bandgap energy decreases with increasing film thickness, which can be attributed to the bandgap renormalization and crystallite size effects.

  5. Effect of the Milling Time of the Precursors on the Physical Properties of Sprayed Aluminum-Doped Zinc Oxide (ZnO:Al Thin Films

    Directory of Open Access Journals (Sweden)

    María De La Luz Olvera

    2012-08-01

    Full Text Available Aluminum doped zinc oxide (ZnO:Al thin films were deposited on soda-lime glass substrates by the chemical spray technique. The atomization of the solution was carried out by ultrasonic excitation. Six different starting solutions from both unmilled and milled Zn and Al precursors, dissolved in a mix of methanol and acetic acid, were prepared. The milling process was carried out using a planetary ball mill at a speed of 300 rpm, and different milling times, namely, 15, 25, 35, 45, and 60 min. Molar concentration, [Al]/[Zn] atomic ratio, deposition temperature and time, were kept at constant values; 0.2 M, 3 at.%, 475 °C, and 10 min, respectively. Results show that, under the same deposition conditions, electrical resistivities of ZnO:Al thin films deposited from milled precursors are lower than those obtained for films deposited from unmilled precursors. X-ray diffraction analysis revealed that all films display a polycrystalline structure, fitting well with the hexagonal wurtzite structure. Changes in surface morphology were observed by scanning electron microscopy (SEM as well, since films deposited from unmilled precursors show triangular shaped grains, in contrast to films deposited from 15 and 35 min milled precursors that display thin slices with hexagonal shapes. The use of milled precursors to prepare starting solutions for depositing ZnO:Al thin films by ultrasonic pyrolysis influences their physical properties.

  6. Aluminum-doped zinc oxide sol–gel thin films: Influence of the sol's water content on the resistivity

    Energy Technology Data Exchange (ETDEWEB)

    Nehmann, Julia B., E-mail: nehmann@isfh.de [Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany); Ehrmann, Nicole; Reineke-Koch, Rolf [Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany); Bahnemann, Detlef W. [Institute for Technical Chemistry, Gottfried Wilhelm Leibniz University Hannover, Callinstrasse 3A, 30167 Hannover (Germany)

    2014-04-01

    Thin films of indium tin oxide (ITO) have gained substantial interest due to their optical and electrical properties. Since ITO is an expensive material and indium is a rare element, considerable attempts have been made to replace it by, e.g., aluminum-doped zinc oxide (ZnO:Al). The production of ZnO:Al is less cost-intensive, especially if the sol–gel technique is applied, while its properties are comparable to those of ITO. In this study, we demonstrate that the electrical properties of ZnO:Al thin films can be improved considerably by the addition of small amounts of ultrapure water to the dip coating solution during the preparation. The lowest resistivity obtained with a film prepared from a sol containing 0.2 M water is 2.8·10{sup −3Ω}cm. Optical modeling thus indicates an improvement of the free carrier mobility of films prepared from sols in the presence of additional water. The films prepared have an average thickness of 340 nm and a solar transmittance above 85% after annealing in a forming gas atmosphere. Clearly, the addition of water to the sol has a positive impact on the resistivity of the final ZnO:Al thin film. We suggest the observed increase of the free carrier mobility to be due to an improved electron transfer at the grain boundaries between the spherical nanoparticles. - Highlights: • We prepared ZnO:Al thin films with additional water in the sol by dip coating. • We found a positive impact of the water in the sol on the resistivity of the film. • The free carrier concentration and mobility increased with additional 0.2 M water. • The refractive indices demonstrate a denser structure related to the water content.

  7. Dry lubricant films for aluminum forming.

    Energy Technology Data Exchange (ETDEWEB)

    Wei, J.; Erdemir, A.; Fenske, G. R.

    1999-03-30

    During metal forming process, lubricants are crucial to prevent direct contact, adhesion, transfer and scuffing of workpiece materials and tools. Boric acid films can be firmly adhered to the clean aluminum surfaces by spraying their methanol solutions and provide extremely low friction coefficient (about 0.04). The cohesion strengths of the bonded films vary with the types of aluminum alloys (6061, 6111 and 5754). The sheet metal forming tests indicate that boric acid films and the combined films of boric acid and mineral oil can create larger strains than the commercial liquid and solid lubricants, showing that they possess excellent lubricities for aluminum forming. SEM analyses indicate that boric acid dry films separate the workpiece and die materials, and prevent their direct contact and preserve their surface qualities. Since boric acid is non-toxic and easily removed by water, it can be expected that boric acid films are environmentally friendly, cost effective and very efficient lubricants for sheet aluminum cold forming.

  8. Optimization of aluminum-doped zinc oxide films deposited at low temperature by radio-frequency sputtering on flexible substrates for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B. [Grupo de Ingenieria Fotonica (GRIFO), Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares, Madrid (Spain)

    2010-02-15

    Aluminum-doped zinc oxide films were deposited at 100 C on polyethylene terephthalate by radio-frequency magnetron sputtering. The sputtering parameters such as RF power and Argon working pressure were varied from 25 to 125 W and from 1.1 to 0.2 Pa, respectively. The structural properties of as-deposited films were analysed by X-ray diffraction, showing that all the deposited films were polycrystalline, with hexagonal structure and a strong preferred c-axis orientation (0 0 2). Full width at half maximum and grain sizes were around 0.27 and ranged from 24 to 32 nm, respectively. The strain state of the samples was also estimated from X-ray diffraction measurements, obtaining compressive stresses from 0.29 to 0.05 GPa. Resistivity as low as 1.1 x 10{sup -3} {omega} cm was achieved for the film deposited at 75 W and 0.2 Pa, sample that showed a low strain state of -0.06 GPa. High optical transmittance ({proportional_to}80%) was exhibited when films were deposited at RF powers below 100 W. Band gap energies ranged from 3.36 to 3.39 eV and a refractive index of 1.80{+-}0.05, constant in the visible region, was also obtained. (author)

  9. Technology for High Pure Aluminum Oxide Production from Aluminum Scrap

    Science.gov (United States)

    Ambaryan, G. N.; Vlaskin, M. S.; Shkolnikov, E. I.; Zhuk, A. Z.

    2017-10-01

    In this study a simple ecologically benign technology of high purity alumina production is presented. The synthesis process consists of three steps) oxidation of aluminum in water at temperature of 90 °C) calcinations of Al hydroxide in atmosphere at 1100 °C) high temperature vacuum processing of aluminum alpha oxide at 1750 °C. Oxidation of aluminum scrap was carried out under intensive mixing in water with small addition of KOH as a catalyst. It was shown that under implemented experimental conditions alkali was continuously regenerated during oxidation reaction and synergistic effect of low content alkali aqueous solution and intensive mixing worked. The product of oxidation of aluminum scrap is the powder of Al(OH)3. Then it can be preliminary granulated or directly subjected to thermal treatment deleting the impurities from the product (aluminum oxide). It was shown the possibility to produce the high-purity aluminum oxide of 5N grade (99.999 %). Aluminum oxide, synthesized by means of the proposed method, meets the requirements of industrial manufacturers of synthetic sapphire (aluminum oxide monocrystals). Obtained high pure aluminum oxide can be also used for the manufacture of implants, artificial joints, microscalpels, high-purity ceramics and other refractory shapes for manufacture of ultra-pure products.

  10. Air-Impregnated Nanoporous Anodic Aluminum Oxide Layers for Enhancing the Corrosion Resistance of Aluminum.

    Science.gov (United States)

    Jeong, Chanyoung; Lee, Junghoon; Sheppard, Keith; Choi, Chang-Hwan

    2015-10-13

    Nanoporous anodic aluminum oxide layers were fabricated on aluminum substrates with systematically varied pore diameters (20-80 nm) and oxide thicknesses (150-500 nm) by controlling the anodizing voltage and time and subsequent pore-widening process conditions. The porous nanostructures were then coated with a thin (only a couple of nanometers thick) Teflon film to make the surface hydrophobic and trap air in the pores. The corrosion resistance of the aluminum substrate was evaluated by a potentiodynamic polarization measurement in 3.5 wt % NaCl solution (saltwater). Results showed that the hydrophobic nanoporous anodic aluminum oxide layer significantly enhanced the corrosion resistance of the aluminum substrate compared to a hydrophilic oxide layer of the same nanostructures, to bare (nonanodized) aluminum with only a natural oxide layer on top, and to the latter coated with a thin Teflon film. The hydrophobic nanoporous anodic aluminum oxide layer with the largest pore diameter and the thickest oxide layer (i.e., the maximized air fraction) resulted in the best corrosion resistance with a corrosion inhibition efficiency of up to 99% for up to 7 days. The results demonstrate that the air impregnating the hydrophobic nanopores can effectively inhibit the penetration of corrosive media into the pores, leading to a significant improvement in corrosion resistance.

  11. Preparation of mesoporous alumina films by anodization: Effect of pretreatments on the aluminum surface and MTBE catalytic oxidation

    International Nuclear Information System (INIS)

    Vazquez, A.L.; Carrera, R.; Arce, E.; Castillo, N.; Castillo, S.; Moran-Pineda, M.

    2009-01-01

    Mesoporous materials are both scientifically and technologically important because of the presence of voids of controllable dimensions at atomic, molecular, and nanometric scales. Over the last decade, there has been both an increasing interest and research effort in the synthesis and characterization of these types of materials. The purposes of this work are to study the physical and chemical changes in the properties of mesoporous alumina films produced by anodization in sulphuric acid by different pretreatments on the aluminium surface such as mechanical polishing [MP] and electropolishing [EP]; and to compare their properties such as morphology, structure and catalytic activity with those present in commercial alumina. The morphologic and physical characterizations of the alumina film samples were carried out by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The chemical evaluations were performed by the oxidation of methyl-tert-butyl-ether (MTBE) at 400 deg. C under O 2 /He oxidizing conditions (Praxair, 2.0% O 2 /He balance). According to the results, the samples that presented higher activities than those in Al 2 O 3 /Al [MP] and commercial alumina in the MTBE oxidation (69%), were those prepared by Al 2 O 3 /Al [EP]. The average mesoporous diameter was 17 nm, and the morphological shape was equiaxial; thus, that pore distribution was the smallest of all with a homogeneous distribution.

  12. Preparation of mesoporous alumina films by anodization: Effect of pretreatments on the aluminum surface and MTBE catalytic oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Vazquez, A.L., E-mail: avazquezd@ipn.m [Departamento de Ingenieria Metalurgica, ESIQIE-IPN, AP 75-876, Mexico, D.F. (Mexico); Programa de Ingenieria Molecular, Instituto Mexicano del Petroleo, Eje Lazaro Cardenas 152, C.P. 07730, Mexico, D.F. (Mexico); Carrera, R. [Departamento de Ingenieria Metalurgica, ESIQIE-IPN, AP 75-876, Mexico, D.F. (Mexico); Programa de Ingenieria Molecular, Instituto Mexicano del Petroleo, Eje Lazaro Cardenas 152, C.P. 07730, Mexico, D.F. (Mexico); Arce, E. [Departamento de Ingenieria Metalurgica, ESIQIE-IPN, AP 75-876, Mexico, D.F. (Mexico); Castillo, N. [CINVESTAV, Departamento de Fisica. Av. IPN 2508, 07360, Mexico, D.F (Mexico); Castillo, S. [Departamento de Ingenieria Metalurgica, ESIQIE-IPN, AP 75-876, Mexico, D.F. (Mexico); Programa de Ingenieria Molecular, Instituto Mexicano del Petroleo, Eje Lazaro Cardenas 152, C.P. 07730, Mexico, D.F. (Mexico); Moran-Pineda, M. [Programa de Ingenieria Molecular, Instituto Mexicano del Petroleo, Eje Lazaro Cardenas 152, C.P. 07730, Mexico, D.F. (Mexico)

    2009-08-26

    Mesoporous materials are both scientifically and technologically important because of the presence of voids of controllable dimensions at atomic, molecular, and nanometric scales. Over the last decade, there has been both an increasing interest and research effort in the synthesis and characterization of these types of materials. The purposes of this work are to study the physical and chemical changes in the properties of mesoporous alumina films produced by anodization in sulphuric acid by different pretreatments on the aluminium surface such as mechanical polishing [MP] and electropolishing [EP]; and to compare their properties such as morphology, structure and catalytic activity with those present in commercial alumina. The morphologic and physical characterizations of the alumina film samples were carried out by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The chemical evaluations were performed by the oxidation of methyl-tert-butyl-ether (MTBE) at 400 deg. C under O{sub 2}/He oxidizing conditions (Praxair, 2.0% O{sub 2}/He balance). According to the results, the samples that presented higher activities than those in Al{sub 2}O{sub 3}/Al [MP] and commercial alumina in the MTBE oxidation (69%), were those prepared by Al{sub 2}O{sub 3}/Al [EP]. The average mesoporous diameter was 17 nm, and the morphological shape was equiaxial; thus, that pore distribution was the smallest of all with a homogeneous distribution.

  13. Plasma diagnostics during magnetron sputtering of aluminum doped zinc oxide

    DEFF Research Database (Denmark)

    Stamate, Eugen; Crovetto, Andrea; Sanna, Simone

    2016-01-01

    Plasma parameters during magnetron sputtering of aluminum-doped zinc oxide are investigated with optical emission spectroscopy, electrostatic probes and mass spectrometry with the aim of understanding the role of negative ions of oxygen during the film growth and improving the uniformity of the f......Plasma parameters during magnetron sputtering of aluminum-doped zinc oxide are investigated with optical emission spectroscopy, electrostatic probes and mass spectrometry with the aim of understanding the role of negative ions of oxygen during the film growth and improving the uniformity...

  14. Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices

    Directory of Open Access Journals (Sweden)

    Hui-Ying Li

    2015-02-01

    Full Text Available Preparation of dense alumina (Al2O3 thin film through atomic layer deposition (ALD provides a pathway to achieve the encapsulation of organic light emitting devices (OLED. Unlike traditional ALD which is usually executed at higher reaction n temperatures that may affect the performance of OLED, this application discusses the development on preparation of ALD thin film at a low temperature. One concern of ALD is the suppressing effect of ambient temperature on uniformity of thin film. To mitigate this issue, the pumping time in each reaction cycle was increased during the preparation process, which removed reaction byproducts and inhibited the formation of vacancies. As a result, the obtained thin film had both high uniformity and density properties, which provided an excellent encapsulation performance. The results from microstructure morphology analysis, water vapor transmission rate, and lifetime test showed that the difference in uniformity between thin films prepared at low temperatures, with increased pumping time, and high temperatures was small and there was no obvious influence of increased pumping time on light emitting performance. Meanwhile, the permeability for water vapor of the thin film prepared at a low temperature was found to reach as low as 1.5 × 10−4 g/(m2·day under ambient conditions of 25 °C and 60% relative humidity, indicating a potential extension in the lifetime for the OLED.

  15. Electrochemical fabrication of CdS/Co nanowire arrays in porous aluminum oxide templates

    CERN Document Server

    Yoon, C H

    2002-01-01

    A procedure for preparing semiconductor/metal nanowire arrays is described, based on a template method which entails electrochemical deposition into nanometer-wide parallel pores of anodic aluminum oxide films on aluminum. Aligned CdS/Co heterostructured nanowires have been prepared by ac electrodeposition in the anodic aluminum oxide templates. By varying the preparation conditions, a variety of CdS/Co nanowire arrays were fabricated, whose dimensional properties could be adjusted.

  16. Spatial atomic layer deposition on flexible porous substrates: ZnO on anodic aluminum oxide films and Al2O3 on Li ion battery electrodes

    International Nuclear Information System (INIS)

    Sharma, Kashish; Routkevitch, Dmitri; Varaksa, Natalia; George, Steven M.

    2016-01-01

    Spatial atomic layer deposition (S-ALD) was examined on flexible porous substrates utilizing a rotating cylinder reactor to perform the S-ALD. S-ALD was first explored on flexible polyethylene terephthalate polymer substrates to obtain S-ALD growth rates on flat surfaces. ZnO ALD with diethylzinc and ozone as the reactants at 50 °C was the model S-ALD system. ZnO S-ALD was then performed on nanoporous flexible anodic aluminum oxide (AAO) films. ZnO S-ALD in porous substrates depends on the pore diameter, pore aspect ratio, and reactant exposure time that define the gas transport. To evaluate these parameters, the Zn coverage profiles in the pores of the AAO films were measured using energy dispersive spectroscopy (EDS). EDS measurements were conducted for different reaction conditions and AAO pore geometries. Substrate speeds and reactant pulse durations were defined by rotating cylinder rates of 10, 100, and 200 revolutions per minute (RPM). AAO pore diameters of 10, 25, 50, and 100 nm were utilized with a pore length of 25 μm. Uniform Zn coverage profiles were obtained at 10 RPM and pore diameters of 100 nm. The Zn coverage was less uniform at higher RPM values and smaller pore diameters. These results indicate that S-ALD into porous substrates is feasible under certain reaction conditions. S-ALD was then performed on porous Li ion battery electrodes to test S-ALD on a technologically important porous substrate. Li 0.20 Mn 0.54 Ni 0.13 Co 0.13 O 2 electrodes on flexible metal foil were coated with Al 2 O 3 using 2–5 Al 2 O 3 ALD cycles. The Al 2 O 3 ALD was performed in the S-ALD reactor at a rotating cylinder rate of 10 RPM using trimethylaluminum and ozone as the reactants at 50 °C. The capacity of the electrodes was then tested versus number of charge–discharge cycles. These measurements revealed that the Al 2 O 3 S-ALD coating on the electrodes enhanced the capacity stability. This S-ALD process could be extended to roll-to-roll operation for

  17. Characterization of phosphate films on aluminum surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, B.; Ramamurthy, S.; McIntyre, N.S. [Univ. of Western Ontario, London, Ontario (Canada)

    1997-08-01

    A thin layer of phosphate conversion coating was formed on pure aluminum in a commercial zinc-manganese phosphating bath. A number of surface analytical techniques were used to characterize the phosphate thin films formed after immersion times ranging from 30 s to 10 min. The coating contained mainly a crystalline structure with dispersed micrometer-scale cavities. The major constituents of the phosphate film were zinc, phosphorus, and oxygen; a small amount of manganese was also detected. Based on these results, a three-stage mechanism was proposed for the formation and the growth of phosphate conversion coatings on aluminum. Electrochemical impedance spectroscopy was used to evaluate the corrosion performance of phosphated and uncoated aluminum samples in 0.50 M Na{sub 2}SO{sub 4} and 0.10 M H{sub 2}SO{sub 4} solutions. Both types of samples exhibited a passive state in the neutral solution and general corrosion behavior in the acid solution.

  18. PTFE-ALUMINUM films serve as neutral density filters

    Science.gov (United States)

    Burks, H. D.

    1966-01-01

    Polytetrafluoroethylene /PTFE/ films coated with aluminum films act as neutral density filters in the wavelength range 0.3 to 2.1 microns. These filters are effective in the calibration of photometric systems.

  19. Nanoscale aluminum concaves for light-trapping in organic thin-films

    DEFF Research Database (Denmark)

    Goszczak, Arkadiusz Jaroslaw; Adam, Jost; Cielecki, Pawel Piotr

    2016-01-01

    Anodic aluminum oxide (AAO) templates, fabricated from oxalic acid and phosphoric acid, lead to non-periodic nanoscale concave structures in their underlying aluminum layer, which are investigated for their field-enhancement properties by applying a thin-film polymer coating based laser ablation...... technique. Local ablation spots, corresponding to field enhancement on the ridge edges of the aluminum concave nanostructures, are observed in surface-covering polymer films, and confirmed with FDTD studies. The field enhancement leads to improved light absorption in the applied polymer layers, which may...

  20. All-Aluminum Thin Film Transistor Fabrication at Room Temperature

    Directory of Open Access Journals (Sweden)

    Rihui Yao

    2017-02-01

    Full Text Available Bottom-gate all-aluminum thin film transistors with multi conductor/insulator nanometer heterojunction were investigated in this article. Alumina (Al2O3 insulating layer was deposited on the surface of aluminum doping zinc oxide (AZO conductive layer, as one AZO/Al2O3 heterojunction unit. The measurements of transmittance electronic microscopy (TEM and X-ray reflectivity (XRR revealed the smooth interfaces between ~2.2-nm-thick Al2O3 layers and ~2.7-nm-thick AZO layers. The devices were entirely composited by aluminiferous materials, that is, their gate and source/drain electrodes were respectively fabricated by aluminum neodymium alloy (Al:Nd and pure Al, with Al2O3/AZO multilayered channel and AlOx:Nd gate dielectric layer. As a result, the all-aluminum TFT with two Al2O3/AZO heterojunction units exhibited a mobility of 2.47 cm2/V·s and an Ion/Ioff ratio of 106. All processes were carried out at room temperature, which created new possibilities for green displays industry by allowing for the devices fabricated on plastic-like substrates or papers, mainly using no toxic/rare materials.

  1. The preparation and properties of aluminum nitride films

    Science.gov (United States)

    Chu, T. L.; Kelm, R. W., Jr.

    1975-01-01

    Aluminum nitride films have been deposited on silicon substrates at 800-1200 C by the pyrolysis of an aluminum trichloride-ammonia complex, AlCl3.3NH3, in a gas flow system. The deposit was transparent, tightly adherent to the substrate, and was confirmed to be aluminum nitride by X-ray and electron diffraction techniques. The deposited aluminum nitride films were found to be polycrystalline with the crystallite size increasing with increasing temperature of deposition. Other properties of aluminum nitride films relevant to device applications, including density, refractive index, dissolution rate, dielectric constant, and masking ability, have been determined. These properties indicate that aluminum nitride films have potential as a dielectric in electronic devices.

  2. Formulation and method for preparing gels comprising hydrous aluminum oxide

    Science.gov (United States)

    Collins, Jack L.

    2014-06-17

    Formulations useful for preparing hydrous aluminum oxide gels contain a metal salt including aluminum, an organic base, and a complexing agent. Methods for preparing gels containing hydrous aluminum oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including aluminum, an organic base, and a complexing agent.

  3. Aluminum Oxide Formation On Fecral Catalyst Support By Electro-Chemical Coating

    Directory of Open Access Journals (Sweden)

    Yang H.S.

    2015-06-01

    Full Text Available FeCrAl is comprised essentially of Fe, Cr, Al and generally considered as metallic substrates for catalyst support because of its advantage in the high-temperature corrosion resistance, high mechanical strength, and ductility. Oxidation film and its adhesion on FeCrAl surface with aluminum are important for catalyst life. Therefore various appropriate surface treatments such as thermal oxidation, Sol, PVD, CVD has studied. In this research, PEO (plasma electrolytic oxidation process was applied to form the aluminum oxide on FeCrAl surface, and the formed oxide particle according to process conditions such as electric energy and oxidation time were investigated. Microstructure and aluminum oxide particle on FeCrAl surface after PEO process was observed by FE-SEM and EDS with element mapping analysis. The study presents possibility of aluminum oxide formation by electro-chemical coating process without any pretreatment of FeCrAl.

  4. A study of hydrogen permeation in aluminum alloy treated by various oxidation processes

    International Nuclear Information System (INIS)

    Song Wenhai; Long Bin

    1997-01-01

    A set of oxide coatings was formed on the surface of an Al alloy (wt%: Fe, 0.24; Si, 1.16; Cu, 0.05-0.2; Zn, 0.1; Al, residual) by means of various oxidation processes. The hydrogen permeability through the aluminum alloy and its coating materials was determined by a vapor phase permeation technique at temperatures ranging from 400 to 500 C using high-purity H 2 (99.9999%) gas with an upstream hydrogen pressure of 10 4 -10 5 Pa. The experimental results show that the hydrogen permeability through aluminum oxide coating is 100-2000 times lower than that through the aluminum alloy substrate. This means that the aluminum oxide is a significant hydrogen permeation barrier. A high hydrogen permeation resistance was observed in an oxide layer prefilmed in 200 C water, while an anodized aluminum oxide film had a less obstructive effect, possibly caused by the porous structure of the anodic oxide. The hydrogen permeability through films of aluminum oxide was not a simple function of the aluminum-oxide phase configuration. (orig.)

  5. Aluminum nitride and nanodiamond thin film microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Knoebber, Fabian; Bludau, Oliver; Roehlig, Claus-Christian; Williams, Oliver; Sah, Ram Ekwal; Kirste, Lutz; Cimalla, Volker; Lebedev, Vadim; Nebel, Christoph; Ambacher, Oliver [Fraunhofer-Institute for Applied Solid State Physics, Freiburg (Germany)

    2010-07-01

    In this work, aluminum nitride (AlN) and nanocrystalline diamond (NCD) thin film microstructures have been developed. Freestanding NCD membranes were coated with a piezoelectrical AlN layer in order to build tunable micro-lens arrays. For the evaluation of the single material quality, AlN and NCD thin films on silicon substrates were fabricated using RF magnetron sputtering and microwave chemical vapor deposition techniques, respectively. The crystal quality of AlN was investigated by X-ray diffraction. The piezoelectric constant d{sub 33} was determined by scanning laser vibrometry. The NCD thin films were optimized with respect to surface roughness, mechanical stability, intrinsic stress and transparency. To determine the mechanical properties of the materials, both, micromechanical resonator and membrane structures were fabricated and measured by magnetomotive resonant frequency spectroscopy and bulging experiments, respectively. Finally, the behavior of AlN/NCD heterostructures was modeled using the finite element method and the first structures were characterized by piezoelectrical measurements.

  6. Specific features of aluminum nanoparticle water and wet air oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Lozhkomoev, Aleksandr S., E-mail: asl@ispms.tsc.ru; Glazkova, Elena A., E-mail: eagl@ispms.tsc.ru; Svarovskaya, Natalia V., E-mail: nvsv@ispms.tsc.ru; Bakina, Olga V., E-mail: ovbakina@ispms.tsc.ru; Kazantsev, Sergey O., E-mail: kzso@mail.ru; Lerner, Marat I., E-mail: lerner@ispms.tsc.ru [National Research Tomsk Polytechnic University, Tomsk, 634050 (Russian Federation)

    2015-10-27

    The oxidation processes of the electrically exploded aluminum nanopowders in water and in wet air are examined in the paper. The morphology of the intermediate reaction products of aluminum oxidation has been studied using the transmission electron microscopy. It was shown that the aluminum nanopowder water oxidation causes the formation of the hollow spheres with mesoporous boehmite nanosheets coating. The wedge-like bayerite particles are formed during aluminum nanopowder wet air oxidation.

  7. 21 CFR 73.1015 - Chromium-cobalt-aluminum oxide.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Chromium-cobalt-aluminum oxide. 73.1015 Section 73... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Drugs § 73.1015 Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide is a blue-green pigment obtained by calcining a...

  8. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  9. Atomic-scale epitaxial aluminum film on GaAs substrate

    Directory of Open Access Journals (Sweden)

    Yen-Ting Fan

    2017-07-01

    Full Text Available Atomic-scale metal films exhibit intriguing size-dependent film stability, electrical conductivity, superconductivity, and chemical reactivity. With advancing methods for preparing ultra-thin and atomically smooth metal films, clear evidences of the quantum size effect have been experimentally collected in the past two decades. However, with the problems of small-area fabrication, film oxidation in air, and highly-sensitive interfaces between the metal, substrate, and capping layer, the uses of the quantized metallic films for further ex-situ investigations and applications have been seriously limited. To this end, we develop a large-area fabrication method for continuous atomic-scale aluminum film. The self-limited oxidation of aluminum protects and quantizes the metallic film and enables ex-situ characterizations and device processing in air. Structure analysis and electrical measurements on the prepared films imply the quantum size effect in the atomic-scale aluminum film. Our work opens the way for further physics studies and device applications using the quantized electronic states in metals.

  10. Aluminum nitride insulating films for MOSFET devices

    Science.gov (United States)

    Lewicki, G. W.; Maserjian, J.

    1972-01-01

    Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Electrical properties of aluminum nitrides are analyzed and specific use with field effect transistors is defined. Operational limits of field effect transistors are developed.

  11. Nanoscale aluminum dimples for light-trapping in organic thin-films

    DEFF Research Database (Denmark)

    Goszczak, Arkadiusz Jaroslaw; Adam, Jost; Cielecki, Pawel Piotr

    absorption improvement in the active layer of the devices. A prospective, cheap and large-scale compatible method for structuring the electrodes in OSCs arises by the use of anodic aluminum oxide (AAO) membranes. In the present work, aluminum films of high purity and low roughness are formed via e......-beam evaporation of a few nanometers of aluminum followed by a micrometer layer of aluminum formed via sputter deposition. The samples are then anodized to form nano-scale pores of controlled sizes. The anodization of the prepared samples occurs in an electrochemical cell in H2SO4, H2C2O4 and H3PO4 solutions....... Electrolyte solution variation and anodization parameters (sample temperature, voltage) control, allows for AAO pore diameter and interpore distance tuning. The fabricated AAO is selectively etched in H2CrO4/H3PO4 mixtures, in order to reveal the underlying aluminum nanoscale dimples, which are present...

  12. Orientationally ordered ridge structures of aluminum films on hydrogen terminated silicon

    DEFF Research Database (Denmark)

    Quaade, Ulrich; Pantleon, Karen

    2006-01-01

    Films of aluminum deposited onto Si(100) substrates show a surface structure of parallel ridges. On films deposited on oxidized silicon substrates the direction of the ridges is arbitrary, but on films deposited on hydrogen-terminated Si(100) the ridges are oriented parallel to the < 110 > direct......Films of aluminum deposited onto Si(100) substrates show a surface structure of parallel ridges. On films deposited on oxidized silicon substrates the direction of the ridges is arbitrary, but on films deposited on hydrogen-terminated Si(100) the ridges are oriented parallel to the ... > directions on the silicon substrate. The ridge structure appears when the film thickness is above 500 nm, and increasing the film thickness makes the structure more distinct. Anodic oxidation enhances the structure even further. X-ray diffraction indicates that grains in the film have mostly (110) facets...... parallel to the surface, and that the crystallographic texture consists of two components. It is discussed, that the orientational ordering of the grains and ridge structure may be induced by the anisotropic elastic properties of the Si(100) surface or by epitaxial effects. (c) 2006 Elsevier B.V. All...

  13. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  14. MOCVD superconducting oxide films

    Science.gov (United States)

    Hirai, Toshio; Yamane, Hisanori

    1991-01-01

    Preparation of high- Tc superconducting oxide films by MOCVD, their films structure and superconducting properties are reviewed from the standpoint of "nano-composites" and "fine-composites". Y-Ba-Cu-O (YBCO) films formed on SrTiO 3(100) at 850°C showed a superconducting transition temperature with zero resistivity above 90 K. The maximum critical current density was 2.0×10 6 A/cm 2 at 77.3 K and 0 T, and 6.5×10 4 A/cm 2 at 77.3 K and 27 T. CuO and a-axis oriented YBCO grains were contained in the matrix of c-axis oriented YBCO. A transmission electron microscope observation revealed that inclusions of about 10-30 nm were embedded in the a- b plane of YBCO. MOCVD-YBCO films prepared on MgO(100) were used for superconducting devices. Some studies on the MOCVD films of Bi-Sr-Ca-Cu-O and Tl-Ba-Ca-Cu-O are also reviewed.

  15. Monolithic Approach to Oxide Dispersion Strengthened Aluminum, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Nassau Stern Company is investigating an approach for manufacturing oxide dispersion strengthened (ODS) aluminum in bulk rather than powder form. The approach...

  16. The Oxidation Products of Aluminum Hydride and Boron Aluminum Hydride Clusters

    Science.gov (United States)

    2016-01-04

    AFRL-AFOSR-VA-TR-2016-0075 The Oxidation Products of Aluminum Hydride and Boron Aluminum Hydride Clusters KIT BOWEN JOHNS HOPKINS UNIV BALTIMORE MD... Hydride and Boron Aluminum Hydride Clusters 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA9550-14-1-0324 5c.  PROGRAM ELEMENT NUMBER 61102F 6. AUTHOR(S) KIT...of both Aluminum Hydride Cluster Anions and Boron Aluminum Hydride Cluster Anions with Oxygen: Anionic Products The anionic products of reactions

  17. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

    2008-01-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  18. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  19. Anodic oxide films on tungsten

    International Nuclear Information System (INIS)

    Di Paola, A.; Di Quarto, F.; Sunseri, C.

    1980-01-01

    Scanning electron microscopy was used to investigate the morphology of anodic oxide films on tungsten, obtained in various conditions of anodization. Studies were made of the growth of porous films, whose thickness increases with time and depends upon the current density. Temperature and electrolyte composition influence the film morphology. Gravimetric measurements of film dissolution at 70 0 C show that after a transient time, the rate of metal dissolution and that of film formation coincide. The porous films thicken because tungsten dissolves as WO 2 2+ and precipitates as WO 3 .H 2 O. (author)

  20. Oxide ultrathin films science and technology

    CERN Document Server

    Pacchioni, Gianfranco

    2012-01-01

    A wealth of information in one accessible book. Written by international experts from multidisciplinary fields, this in-depth exploration of oxide ultrathin films covers all aspects of these systems, starting with preparation and characterization, and going on to geometrical and electronic structure, as well as applications in current and future systems and devices. From the Contents: Synthesis and Preparation of Oxide Ultrathin Films Characterization Tools of Oxide Ultrathin Films Ordered Oxide Nanostructures on Metal Surfaces Unusual Properties of Oxides and Other Insulators in the Ultrathin Limit Silica and High-K Dielectrics Thin Films in Microelectronics Oxide Passive Films and Corrosion Protection Oxide Films as Catalytic Materials and as Models of Real Catalysts Oxide Films in Spintronics Oxide Ultrathin Films in Solid Oxide Fuel Cells Transparent Conducting and Chromogenic Oxide Films as Solar Energy Materials Oxide Ultrathin Films in Sensor Applications Ferroelectricity in Ultrathin Film Capacitors T...

  1. Liquid-like, self-healing aluminum oxide during deformation at room temperature.

    Science.gov (United States)

    Yang, Yang; Kushima, Akihiro; Han, Weizhong; Xin, Huolin L; Li, Ju

    2018-02-28

    Effective protection from environmental degradation relies on the integrity of oxide as diffusion barriers. Ideally, the passivation layer can repair its own breaches quickly under deformation. While studies suggest that the native aluminum oxide may manifest such properties; it has yet been experimentally proved because direct observations of the environmental deformation of aluminum oxide and its initial formation at room temperature are challenging. Here, we report in situ experiments to stretch pure aluminum nano tips under O2 gas environments in a transmission electron microscope. We discovered that aluminum oxide indeed deforms like liquid and can match the deformation of Al without any cracks/spallation at moderate strain rate. At higher strain rate, we exposed fresh metal surface, and visualized the self-healing process of aluminum oxide at atomic resolution. Unlike traditional thin film growth or nanoglass consolidation processes, we observe seamless coalescence of new oxide islands without forming any glass-glass interface or surface grooves, indicating greatly accelerated glass kinetics at the surface compared to the bulk.

  2. Advances of the research evolution on aluminum electrochemical anodic oxidation technology

    Science.gov (United States)

    Yang, Z. B.; Hu, J. C.; Li, K. Q.; Zhang, S. Y.; Fan, Q. H.; Liu, S. A.

    2017-12-01

    This article gives an overview on the development of aluminum anodization technique in terms of fundamental aspects and practical applications in the past decades. Besides, the formation mechanism and structural characteristics of anodic alumina films as well as the factors affected the formation of porous anodic alumina films are also discussed. Anodic aluminum oxide (AAO) prepared by the anodization method can be divided into two categories: dense anodic alumina (DAA) and porous anodic alumina (PAA). This article also summarizes the optical properties, magnetic properties, solar absorption properties, and catalytic properties of porous anodic alumina film and its applications in nanomaterials, optical materials, magnetic materials, biosensors, solar cells, and so on. In addition, future developmental trend of porous anodic alumina film is covered.

  3. Cerium oxide as conversion coating for the corrosion protection of aluminum

    Directory of Open Access Journals (Sweden)

    JELENA GULICOVSKI

    2013-11-01

    Full Text Available CeO2 coatings were formed on the aluminum after Al surface preparation, by dripping the ceria sol, previously prepared by forced hydrolysis of Ce(NO34. The anticorrosive properties of ceria coatings were investigated by the electrochemical impedance spectroscopy (EIS during the exposure to 0.03 % NaCl. The morphology of the coatings was examined by the scanning electron microscopy (SEM. EIS data indicated considerably larger corrosion resistance of CeO2-coated aluminum than for bare Al. The corrosion processes on Al below CeO2 coating are subjected to more pronounced diffusion limitations in comparison to the processes below passive aluminum oxide film, as the consequence of the formation of highly compact protective coating. The results show that the deposition of ceria coatings is an effective way to improve corrosion resistance for aluminum.

  4. Atmospheric pressure plasma enhanced chemical vapor deposition of zinc oxide and aluminum zinc oxide

    International Nuclear Information System (INIS)

    Johnson, Kyle W.; Guruvenket, Srinivasan; Sailer, Robert A.; Ahrenkiel, S. Phillip; Schulz, Douglas L.

    2013-01-01

    Zinc oxide (ZnO) and aluminum-doped zinc oxide (AZO) thin films were deposited via atmospheric pressure plasma enhanced chemical vapor deposition. A second-generation precursor, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)(N,N′-diethylethylenediamine) zinc, exhibited significant vapor pressure and good stability at one atmosphere where a vaporization temperature of 110 °C gave flux ∼ 7 μmol/min. Auger electron spectroscopy confirmed that addition of H 2 O to the carrier gas stream mitigated F contamination giving nearly 1:1 metal:oxide stoichiometries for both ZnO and AZO with little precursor-derived C contamination. ZnO and AZO thin film resistivities ranged from 14 to 28 Ω·cm for the former and 1.1 to 2.7 Ω·cm for the latter. - Highlights: • A second generation precursor was utilized for atmospheric pressure film growth. • Addition of water vapor to the carrier gas stream led to a marked reduction of ZnF 2 . • Carbonaceous contamination from the precursor was minimal

  5. Effect of flattened surface morphology of anodized aluminum oxide templates on the magnetic properties of nanoporous Co/Pt and Co/Pd thin multilayered films

    Science.gov (United States)

    Nguyen, T. N. Anh; Fedotova, J.; Kasiuk, J.; Bayev, V.; Kupreeva, O.; Lazarouk, S.; Manh, D. H.; Vu, D. L.; Chung, S.; Åkerman, J.; Altynov, V.; Maximenko, A.

    2018-01-01

    For the first time, nanoporous Al2O3 templates with smoothed surface relief characterized by flattened interpore areas were used in the fabrication of Co/Pd and Co/Pt multilayers (MLs) with strong perpendicular magnetic anisotropy (PMA). Alternating gradient magnetometry (AGM) revealed perfectly conserved PMA in the Co/Pd and Co/Pt porous MLs (antidot arrays) with a ratio of remanent magnetization (Mr) to saturation magnetization (MS) of about 0.99, anisotropy fields (Ha) of up to 2.6 kOe, and a small deviation angle of 8° between the easy magnetization axis and the normal to the film surface. The sufficient magnetic hardening of the porous MLs with enhanced coercive field HC of up to ∼1.9 kOe for Co/Pd and ∼1.5 kOe for Co/Pt MLs, as compared to the continuous reference samples (∼1.5-2 times), is associated with the pinning of the magnetic moments on the nanopore edges. Application of the Stoner-Wohlfarth model for fitting the experimental M/MS(H) curves yielded clear evidence of the predominantly coherent rotation mechanism of magnetization reversal in the porous films.

  6. Synthesis of Morphology Controlled Aluminum Oxide by Hydrothermal Reaction

    Energy Technology Data Exchange (ETDEWEB)

    Yang, L; Yin, S; Sato, T, E-mail: tsusato@tagen.tohoku.ac.jp [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2011-10-29

    Plate-like and wire-like aluminum oxides were successfully synthesized by hydrothermal method without any template additives. Al(NO{sub 3}){sub 3{center_dot}}9H{sub 2}O aqueous solution and precipitator were mixed and introduced to a Teflon lined autoclave, followed by heat treatment at 200deg. C for 24 h. By controlling the concentration of starting material and precipitator, the products with different morphologies were selectively obtained, i.e., the 2-dimensional platelike particles with a diameter of about 8{mu}m were synthesized at low aluminum concentration (0.1 mol/L), while 1-dimensional wire-like products of about 10{mu}m in length were synthesized at high aluminum concentration (0.2 mol/L). The plate-like particles and wire-like particles consisted of single phase of aluminum oxide hydroxide (boehmite, AlOOH) and the sodium aluminate, respectively.

  7. Superhydrophobic nanostructured ZnO thin films on aluminum alloy substrates by electrophoretic deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Ying; Sarkar, D.K., E-mail: dsarkar@uqac.ca; Chen, X-Grant

    2015-02-01

    Graphical abstract: - Highlights: • Fabrication of superhydrophobic ZnO thin films surfaces by electrophoretic deposition process on aluminum substrates. • Effect of bath temperature on the physical and superhydrophobic properties of thin films. • The water contact angle of 155° ± 3 with roll off property has been observed on the film that was grown at bath temperatures of 50 °C. • The activation energy for electrophoretic deposition of SA-functionalized ZnO nanoparticle is calculated to be 0.50 eV. - Abstract: Superhydrophobic thin films have been fabricated on aluminum alloy substrates by electrophoretic deposition (EPD) process using stearic acid (SA) functionalized zinc oxide (ZnO) nanoparticles suspension in alcohols at varying bath temperatures. The deposited thin films have been characterized using both X-ray diffraction (XRD) and infrared (IR) spectroscopy and it is found that the films contain low surface energy zinc stearate and ZnO nanoparticles. It is also observed that the atomic percentage of Zn and O, roughness and water contact angle of the thin films increase with the increase of the deposited bath temperature. Furthermore, the thin film deposited at 50 °C, having a roughness of 4.54 ± 0.23 μm, shows superhydrophobic properties providing a water contact angle of 155 ± 3° with rolling off properties. Also, the activation energy of electrophoretic deposition of stearic-acid-functionalized ZnO nanoparticles is calculated to be 0.5 eV.

  8. The influence of tungsten on the pitting of aluminum films

    International Nuclear Information System (INIS)

    Shaw, B.A.; Fritz, T.L.; Davis, G.D.; Moshier, W.C.

    1990-01-01

    Many of the alloying additions responsible for the corrosion resistance of stainless steels can also be used to enhance the passivity of aluminum, provided that these elements remain in solid solution in the alloy. Passivity enhancing elements such as Cr, Mo, Ta, Zr, and W typically exhibit very low solubility limits in aluminum, below 1 atomic percent, and at these concentrations exert little influence on corrosion behavior. However, these solubility limits can be increased with a concomitant enhancement in corrosion performance if the alloys are produced using a rapid solidification process. One such process is co-sputter deposition of two metals, such as Al and W, simultaneously to form a binary alloy of W in solid solution with Al. Co-sputter deposition is routinely used to produce compound semiconductor films. The authors report on shifts in pitting potentials and on the effect of a transition element (W) on pitting resistance of Al

  9. Low temperature aluminum nitride thin films for sensory applications

    Energy Technology Data Exchange (ETDEWEB)

    Yarar, E.; Zamponi, C.; Piorra, A.; Quandt, E., E-mail: eq@tf.uni-kiel.de [Institute for Materials Science, Chair for Inorganic Functional Materials, Kiel University, D-24143 Kiel (Germany); Hrkac, V.; Kienle, L. [Institute for Materials Science, Chair for Synthesis and Real Structure, Kiel University, D-24143 Kiel (Germany)

    2016-07-15

    A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d{sub 33,f}) increased from 2.30 ± 0.32 pm/V up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (ε{sub r}) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e{sub 31,f}|) of 1.39 ± 0.01 C/m{sup 2} was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.

  10. Glancing angle x-ray studies of oxide films

    International Nuclear Information System (INIS)

    Davenport, A.J.; Isaacs, H.S.

    1989-01-01

    High brightness synchrotron radiation incident at glancing angles has been used to study inhibiting species present in low concentrations in oxide films on aluminum. Glancing incident angle fluorescence measurements give surface-sensitive information on the valence state of elements from the shape of the x-ray absorption edge. Angle-resolved measurements show the depth distribution of the species present. 15 refs., 4 figs

  11. The effect of surface oxide layer on the rate of hydrogen emission from aluminum and its alloys in a high vacuum

    Science.gov (United States)

    Makarova, V. I.; Zyabrev, A. A.

    1979-01-01

    The influence of surface oxide layers on the kinetics of hydrogen emission at the high vacuum of 10 to the minus 8th power torr was investigated at temperatures from 20 to 450 C using samples of pure AB00 aluminum and the cast alloy AMg. Cast and deformed samples of AMts alloy were used to study the effect of oxide film thickness on the rate of hydrogen emission. Thermodynamic calculations of the reactions of the generation and dissociation of aluminum oxide show that degasification at elevated temperatures (up to 600 C) and high vacuum will not reduce the thickness of artificially-generated surface oxide layers on aluminum and its alloys.

  12. Analysis of peel strength of consisting of an aluminum sheet, anodic aluminum oxide and a copper foil laminate composite

    Science.gov (United States)

    Shin, Hyeong-Won; Lee, Hyo-Soo; Jung, Seung-Boo

    2017-01-01

    Laminate composites consisting of an aluminum sheet, anodic aluminum oxide, and copper foil have been used as heat-spreader materials for high-power light-emitting diodes (LEDs). These composites are comparable to the conventional structure comprising an aluminum sheet, epoxy adhesives, and copper foil. The peel strength between the copper foil and anodic aluminum oxide should be more than 1.0 kgf/cm in order to be applied in high-power LED products. We investigated the effect of the anodic aluminum oxide morphology and heat-treatment conditions on the peel strength of the composites. We formed an anodic aluminum oxide layer on a 99.999% pure aluminum sheet using electrochemical anodization. A Ti/Cu seed layer was formed using the sputtering direct bonding copper process in order to form a copper circuit layer on the anodic aluminum oxide layer by electroplating. The developed heat spreader, composed of an aluminum layer, anodic aluminum oxide, and a copper circuit layer, showed peel strengths ranging from 1.05 to 3.45 kgf/cm, which is very suitable for high-power LED applications.

  13. Effect of sealing on the morphology of anodized aluminum oxide

    International Nuclear Information System (INIS)

    Hu, Naiping; Dong, Xuecheng; He, Xueying; Browning, James F.; Schaefer, Dale W.

    2015-01-01

    Highlights: • We explored structural change of anodizing aluminum oxide induced by sealing. • All sealing methods decrease pore size as shown by X-ray/neutron scattering. • Cold sealing and hot water sealing do not alter the aluminum oxide framework. • Hot nickel acetate sealing both fills the pores and deposits on air oxide interface. • Samples with hot nickel acetate sealing outperform other sealing methods. - Abstract: Ultra-small angle X-ray scattering (USAXS), small-angle neutron scattering (SANS), X-ray reflectometry (XRR) and neutron reflectometry (NR) were used to probe structure evolution induced by sealing of anodized aluminum. While cold nickel acetate sealing and hot-water sealing decrease pore size, these methods do not alter the cylindrical porous framework of the anodic aluminum oxide layer. Hot nickel acetate both fills the pores and deposits on the air surface (air–oxide interface), leading to low porosity and small mean pore radius (39 Å). Electrochemical impedance spectroscopy and direct current polarization show that samples sealed by hot nickel acetate outperform samples sealed by other sealing methods

  14. Magnetic composites based on hybrid spheres of aluminum oxide and superparamagnetic nanoparticles of iron oxides

    International Nuclear Information System (INIS)

    Braga, Tiago P.; Vasconcelos, Igor F.; Sasaki, Jose M.; Fabris, J.D.; Oliveira, Diana Q.L. de; Valentini, Antoninho

    2010-01-01

    Materials containing hybrid spheres of aluminum oxide and superparamagnetic nanoparticles of iron oxides were obtained from a chemical precursor prepared by admixing chitosan and iron and aluminum hydroxides. The oxides were first characterized with scanning electron microscopy, X-ray diffraction, and Moessbauer spectroscopy. Scanning electron microscopy micrographs showed the size distribution of the resulting spheres to be highly homogeneous. The occurrence of nano-composites containing aluminum oxides and iron oxides was confirmed from powder X-ray diffraction patterns; except for the sample with no aluminum, the superparamagnetic relaxation due to iron oxide particles were observed from Moessbauer spectra obtained at 298 and 110 K; the onset six line-spectrum collected at 20 K indicates a magnetic ordering related to the blocking relaxation effect for significant portion of small spheres in the sample with a molar ratio Al:Fe of 2:1.

  15. Spotting 2D atomic layers on aluminum nitride thin films.

    Science.gov (United States)

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Srinivasan Raghavan

    2015-10-23

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

  16. Corrosion control of aluminum surfaces by polypyrrole films: influence of electrolyte

    Directory of Open Access Journals (Sweden)

    Andréa Santos Liu

    2007-06-01

    Full Text Available Polypyrrole (PPy films were galvanostatically deposited on 99.9 wt. (% aluminum electrodes from aqueous solutions containing each carboxylic acid: tartaric, oxalic or citric. Scanning Electron Microscopy (SEM was used to analyze the morphology of the aluminum surfaces coated with the polymeric films. It was observed that the films deposited from tartaric acid medium presented higher homogeneity than those deposited from oxalic and citric acid. Furthermore, the corrosion protection of aluminum surfaces by PPy films was also investigated by potentiodynamic polarization experiments.

  17. Aluminum oxide sputtering: a new approach to understanding the sputtering process for binary targets

    International Nuclear Information System (INIS)

    Finn, P.A.; Gruen, D.M.; Page, D.L.

    1976-01-01

    The relative abundances of the products Al, Al 2 O, and AlO sputtered in 15- and 40-kV Ar + and 15-kV H + bombardments of aluminum oxide targets (anodized film, polycrystalline disk, sapphire) are functions of the target material and of the nature, flux, and fluence of the ion beam. This finding suggests that, in collisional sputtering, the material's sensitive parameters are the surface binding energies of the sputtered species. These energies are functions of the surface composition present at the moment of a particular sputtering event and should be identified with the partial molar enthalpy of vaporization of a particular species. The aluminum oxide species--Al, Al 2 O, AlO, Al 2 O 2 , AlO 2 , Al(O 2 ) 2 , and AlO 3 --are characterized by matrix isolation spectroscopy aided by O 18 isotopic substitution experiments. 12 figures, 4 tables

  18. Structural and optical anisotropy of nanoporous anodic aluminum oxide

    NARCIS (Netherlands)

    Kooij, Ernst S.; Galca, A.C.; Wormeester, Herbert; Poelsema, Bene; Schwarz, James A.; Contescu, Cristian I.; Putyera, Karol

    2004-01-01

    Porous aluminum oxide has stimulated considerable interest as a nanostructural template, primarily because of the self-organized formation of extremely well-aligned cylindrical pores. One of the fascinating aspects is the tunability of the interpore distance and pore diameter by simple variation of

  19. Interface strength and degradation of adhesively bonded porous aluminum oxides

    NARCIS (Netherlands)

    Abrahami, S.T.; de Kok, John M.M.; Gudla, Visweswara C.; Ambat, Rajan; Terryn, H.A.; Mol, J.M.C.

    2017-01-01

    For more than six decades, chromic acid anodizing has been the main step in the surface treatment of aluminum for adhesively bonded aircraft structures. Soon this process, known for producing a readily adherent oxide with an excellent corrosion resistance, will be banned by strict international

  20. 21 CFR 73.3110a - Chromium-cobalt-aluminum oxide.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 1 2010-04-01 2010-04-01 false Chromium-cobalt-aluminum oxide. 73.3110a Section... LISTING OF COLOR ADDITIVES EXEMPT FROM CERTIFICATION Medical Devices § 73.3110a Chromium-cobalt-aluminum oxide. (a) Identity. The color additive chromium-cobalt-aluminum oxide (Pigment Blue 36) (CAS Reg. No...

  1. Titanium-Aluminum Oxide Coating on Aluminized Steel

    OpenAIRE

    Fuyan Sun; Guang Wang; Xueyuan Nie

    2014-01-01

    In this study, a plasma electrolytic oxidation (PEO) process was used to form titanium-aluminum oxide coating on aluminized steel. The present work was mainly to study the effects of treatment time of PEO process on properties of the titanium coating. A potentiodynamic polarization corrosion test was employed to investigate the corrosion resistance of the coating. The friction coefficient and wear resistance of the coating were studied by using pin-on-disc test. The thermal transfer behaviors...

  2. Reduction of Oxidative Melt Loss of Aluminum and Its Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Dr. Subodh K. Das; Shridas Ningileri

    2006-03-17

    This project led to an improved understanding of the mechanisms of dross formation. The microstructural evolution in industrial dross samples was determined. Results suggested that dross that forms in layers with structure and composition determined by the local magnesium concentration alone. This finding is supported by fundamental studies of molten metal surfaces. X-ray photoelectron spectroscopy data revealed that only magnesium segregates to the molten aluminum alloy surface and reacts to form a growing oxide layer. X-ray diffraction techniques that were using to investigate an oxidizing molten aluminum alloy surface confirmed for the first time that magnesium oxide is the initial crystalline phase that forms during metal oxidation. The analytical techniques developed in this project are now available to investigate other molten metal surfaces. Based on the improved understanding of dross initiation, formation and growth, technology was developed to minimize melt loss. The concept is based on covering the molten metal surface with a reusable physical barrier. Tests in a laboratory-scale reverberatory furnace confirmed the results of bench-scale tests. The main highlights of the work done include: A clear understanding of the kinetics of dross formation and the effect of different alloying elements on dross formation was obtained. It was determined that the dross evolves in similar ways regardless of the aluminum alloy being melted and the results showed that amorphous aluminum nitride forms first, followed by amorphous magnesium oxide and crystalline magnesium oxide in all alloys that contain magnesium. Evaluation of the molten aluminum alloy surface during melting and holding indicated that magnesium oxide is the first crystalline phase to form during oxidation of a clean aluminum alloy surface. Based on dross evaluation and melt tests it became clear that the major contributing factor to aluminum alloy dross was in the alloys with Mg content. Mg was

  3. Thin films produced on 5052 aluminum alloy by plasma electrolytic oxydation with red mud-containing electrolytes

    OpenAIRE

    Sottovia, Livia [UNESP; Pereira Antunes, Maria Lucia [UNESP; Antonio, Cesar Augusto [UNESP; Rangel, Elidiane Cipriano [UNESP; Cruz, Nilson Cristino da [UNESP

    2014-01-01

    In this paper, we propose the production of ceramic protective thin films by plasma electrolytic oxidation using red mud-containing electrolytes. The treatments were performed through the application of pulsed voltage (600 V, 200 Hz) during 300 seconds to aluminum samples immersed in electrolytic solutions with 5 g of red mud per liter of distilled water. The coatings were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS) ...

  4. Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films.

    Science.gov (United States)

    Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Williams, O A; Lebedev, V; Nebel, C E; Ambacher, O

    2013-01-18

    Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10(8) cm(-2)), in the case of hydrogen-treated ND seeding particles, to very high values of 10(11) cm(-2) for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young's moduli of more than 1000 GPa.

  5. Influence of copper in spheres of iron and aluminum oxide

    International Nuclear Information System (INIS)

    Sousa, A.F. de; Gomes, E.C.C.; Valentini, A.; Longhinotti, E.; Sales, F.A.M.

    2010-01-01

    The various applications of mesoporous materials in adsorption and catalysis have driven research for new synthetic routes to improve the structural and morphological characteristics of the compounds currently available. Spherical mesoporous materials of aluminum oxide and / or iron were synthesized in proportions of 10.30 and 50%, and then impregnated with copper oxide by wet impregnation method. Supporters of spherical iron oxide and aluminum before and after impregnation with copper were characterized by XRD, SEM, chemical analysis, BET and TPR. The analysis results of XRD showed the formation of crystalline phases AB 2 O 4 type, the results of TPR showed a shift of the band of iron reduction with the incorporation of copper and the samples indicated a decrease in porosity, possibly due to the closure of pores with the addition of copper. (author)

  6. Passivation effects of atomic-layer-deposited aluminum oxide

    Directory of Open Access Journals (Sweden)

    Kotipalli R.

    2013-09-01

    Full Text Available Atomic-layer-deposited (ALD aluminum oxide (Al2O3 has recently demonstrated an excellent surface passivation for both n- and p-type c-Si solar cells thanks to the presence of high negative fixed charges (Qf ~ 1012−1013 cm-2 in combination with a low density of interface states (Dit. This paper investigates the passivation quality of thin (15 nm Al2O3 films deposited by two different techniques: plasma-enhanced atomic layer deposition (PE-ALD and Thermal atomic layer deposition (T-ALD. Other dielectric materials taken into account for comparison include: thermally-grown silicon dioxide (SiO2 (20 nm, SiO2 (20 nm deposited by plasma-enhanced chemical vapour deposition (PECVD and hydrogenated amorphous silicon nitride (a-SiNx:H (20 nm also deposited by PECVD. With the above-mentioned dielectric layers, Metal Insulator Semiconductor (MIS capacitors were fabricated for Qf and Dit extraction through Capacitance-Voltage-Conductance (C-V-G measurements. In addition, lifetime measurements were carried out to evaluate the effective surface recombination velocity (SRV. The influence of extracted C-V-G parameters (Qf,Dit on the injection dependent lifetime measurements τ(Δn, and the dominant passivation mechanism involved have been discussed. Furthermore we have also studied the influence of the SiO2 interfacial layer thickness between the Al2O3 and silicon surface on the field-effect passivation mechanism. It is shown that the field effect passivation in accumulation mode is more predominant when compared to surface defect passivation.

  7. Passivation effects of atomic-layer-deposited aluminum oxide

    Science.gov (United States)

    Kotipalli, R.; Delamare, R.; Poncelet, O.; Tang, X.; Francis, L. A.; Flandre, D.

    2013-09-01

    Atomic-layer-deposited (ALD) aluminum oxide (Al2O3) has recently demonstrated an excellent surface passivation for both n- and p-type c-Si solar cells thanks to the presence of high negative fixed charges (Qf ~ 1012-1013 cm-2) in combination with a low density of interface states (Dit). This paper investigates the passivation quality of thin (15 nm) Al2O3 films deposited by two different techniques: plasma-enhanced atomic layer deposition (PE-ALD) and Thermal atomic layer deposition (T-ALD). Other dielectric materials taken into account for comparison include: thermally-grown silicon dioxide (SiO2) (20 nm), SiO2 (20 nm) deposited by plasma-enhanced chemical vapour deposition (PECVD) and hydrogenated amorphous silicon nitride (a-SiNx:H) (20 nm) also deposited by PECVD. With the above-mentioned dielectric layers, Metal Insulator Semiconductor (MIS) capacitors were fabricated for Qf and Dit extraction through Capacitance-Voltage-Conductance (C-V-G) measurements. In addition, lifetime measurements were carried out to evaluate the effective surface recombination velocity (SRV). The influence of extracted C-V-G parameters (Qf,Dit) on the injection dependent lifetime measurements τ(Δn), and the dominant passivation mechanism involved have been discussed. Furthermore we have also studied the influence of the SiO2 interfacial layer thickness between the Al2O3 and silicon surface on the field-effect passivation mechanism. It is shown that the field effect passivation in accumulation mode is more predominant when compared to surface defect passivation.

  8. Wettability of TiAlN films by molten aluminum

    Energy Technology Data Exchange (ETDEWEB)

    Shen Ping [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka Ibaraki, Osaka, 567-0047 (Japan) and Key Laboratory of Automobile Materials, Department of Materials Science and Engineering, Jilin University, No. 5988 Renmin Street, Changchun, 130025 (China)]. E-mail: shenping@jlu.edu.cn; Nose, Masateru [Department of Industrial Art and Craft, Takaoka National College, 180 Futagami-machi, Takaoka City, Toyama 933-8588 (Japan); Fujii, Hidetoshi [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka Ibaraki, Osaka, 567-0047 (Japan); Nogi, Kiyoshi [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka Ibaraki, Osaka, 567-0047 (Japan)

    2006-12-05

    In this study, we made an attempt to measure the wettability of the TiAlN films by molten Al at temperatures between 1073 K and 1273 K using an improved sessile drop method. The true contact angles cannot be obtained for the films deposited on the stainless steel and tungsten substrates due to considerable interdiffusion or reaction between molten Al and the substrate constituents. For the films deposited on the stable alumina single crystals and in contact with clean Al, the true contact angles are possible in the range of 80-100 deg. at 1173-1273 K and the work of adhesion is 0.77-1.08 J m{sup -2}. In the case of oxidized Al, typically at T < 1173 K, however, the wettability and the adhesion are significantly decreased.

  9. Fracture Analysis of MWCNT/Epoxy Nanocomposite Film Deposited on Aluminum Substrate.

    Science.gov (United States)

    Her, Shiuh-Chuan; Chien, Pao-Chu

    2017-04-13

    Multi-walled carbon nanotube (MWCNT) reinforced epoxy films were deposited on an aluminum substrate by a hot-pressing process. Three-point bending tests were performed to determine the Young's modulus of MWCNT reinforced nanocomposite films. Compared to the neat epoxy film, nanocomposite film with 1 wt % of MWCNT exhibits an increase of 21% in the Young's modulus. Four-point-bending tests were conducted to investigate the fracture toughness of the MWCNT/epoxy nanocomposite film deposited on an aluminum substrate with interfacial cracks. Based on the Euler-Bernoulli beam theory, the strain energy in a film/substrate composite beam is derived. The difference of strain energy before and after the propagation of the interfacial crack are calculated, leading to the determination of the strain energy release rate. Experimental test results show that the fracture toughness of the nanocomposite film deposited on the aluminum substrate increases with the increase in the MWCNT content.

  10. An XPS study of the stability of Fomblin Z25 on the native oxide of aluminum. [x ray photoelectron spectroscopy

    Science.gov (United States)

    Herrera-Fierro, Pilar; Pepper, Stephen V.; Jones, William R.

    1991-01-01

    Thin films of Fomblin Z25, a perfluoropolyalkylether lubricant, were vapor deposited onto clean, oxidized aluminum and sapphire surfaces, and their behavior at different temperatures was studied using x ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS). It was found that the interfacial fluid molecules decompose on the native oxide at room temperature, and continue to decompose at elevated temperatures, as previous studies had shown to occur on clean metal. TDS indicated that different degradation mechanisms were operative for clean and oxidized aluminum. On sapphire substrates, no reaction was observed at room temperature. Our conclusion is that the native oxide of aluminum is neither passive nor protective towards Fomblin Z25. At high temperatures (150 C) degradation of the polymer on sapphire produced a debris layer at the interface with a chemical composition similar to the one formed on aluminum oxide. Rubbing a Fomblin film on a single crystal sapphire also induced the decomposition of the lubricant in contact with the interface and the formulation of a debris layer.

  11. X-ray photoelectron spectroscopy study of the stability of Fomblin Z25 on the native oxide of aluminum

    Science.gov (United States)

    Herrera-Fierro, Pilar; Pepper, Stephen V.; Jones, William R.

    1992-01-01

    Thin films of Fomblin Z25, a perfluoropolyalkylether lubricant, were vapor deposited onto clean, oxidized aluminum, and onto sapphire surfaces, and their behavior at different temperatures was studied using X-ray photoelectron spectroscopy and temperature desorption spectroscopy (TDS). The interfacial fluid molecules decompose on the native oxide at room temperature, and continue to decompose at elevated temperatures, as previous studies had shown to occur on the clean metal. TDS indicated that different degradation mechanisms were operative for clean and oxidized aluminum. On sapphire substrates, no reaction was observed at room temperature. The native oxide of aluminum is neither passive nor protective towards Fomblin Z25. At higher temperatures (150 C), degradation of the polymer on sapphire produced a debris layer at the interface with a chemical composition similar to the one formed on aluminum oxide. Rubbing a Fomblin film on a single crystal sapphire also induced the decomposition of the lubricant in contact with the interface and the formation of a debris layer.

  12. Lithium insertion in sputtered vanadium oxide film

    DEFF Research Database (Denmark)

    West, K.; Zachau-Christiansen, B.; Skaarup, S.V.

    1992-01-01

    Vanadium oxide films have been prepared by RF-sputtering using an oxygen containing sputter ps and a V2O5 target. The main component of these films is orthorhombic V2O5 with poor crystallinity and a tendency for ordering of the crystallites with the c-direction parallel to the substrate. All films...... were oxygen deficient compared to V2O5. Films prepared in pure argon were reduced to V(4) or lower. The vanadium oxide films were tested in solid-state lithium cells. Films sputtered in oxygen showed electrochemical properties similar to crystalline V2O5. The main differences are a decreased capacity...

  13. Electric Field Stiffening Effect in c-Oriented Aluminum Nitride Piezoelectric Thin Films.

    Science.gov (United States)

    Chen, Cong; Shang, Zhengguo; Gong, Jia; Zhang, Feng; Zhou, Hong; Tang, Bin; Xu, Yi; Zhang, Chi; Yang, Ya; Mu, Xiaojing

    2018-01-17

    Aluminum nitride offers unique material advantages for the realization of ultrahigh-frequency acoustic devices attributed to its high ratio of stiffness to density, compatibility with harsh environments, and superior thermal properties. Although, to date, aluminum nitride thin films have been widely investigated regarding their electrical and mechanical characteristics under alternating small signal excitation, their ultrathin nature under large bias may also provide novel and useful properties. Here, we present a comprehensive investigation of electric field stiffening effect in c-oriented aluminum nitride piezoelectric thin films. By analyzing resonance characteristics in a 2.5 GHz aluminum nitride-based film bulk acoustic resonator, we demonstrate an up to 10% linear variation in the equivalent stiffness of aluminum nitride piezoelectric thin films when an electric field was applied from -150 to 150 MV/m along the c-axis. Moreover, for the first time, an atomic interaction mechanism is proposed to reveal the nature of electric field stiffening effect, suggesting that the nonlinear variation of the interatomic force induced by electric field modulation is the intrinsic reason for this phenomenon in aluminum nitride piezoelectric thin films. Our work provides vital experimental data and effective theoretical foundation for electric field stiffening effect in aluminum nitride piezoelectric thin films, indicating the huge potential in tunable ultrahigh-frequency microwave devices.

  14. Negative permittivity of ZnO thin films prepared from aluminum and gallium doped ceramics via pulsed-laser deposition

    DEFF Research Database (Denmark)

    Bodea, M. A.; Sbarcea, G.; Naik, G. V.

    2013-01-01

    Aluminum and gallium doped zinc oxide thin films with negative dielectric permittivity in the near infrared spectral range are grown by pulsed laser deposition. Composite ceramics comprising ZnO and secondary phase Al2O3 or Ga2O3 are employed as targets for laser ablation. Films deposited on glass...... from dense and small-grained ceramic targets show optical transmission larger than 70 % in the visible and reveal an onset of metallic reflectivity in the near infrared at 1100 nm and a crossover to a negative real part of the permittivity at approximately 1500 nm. In comparison to noble metals, doped...

  15. Metallic nanoparticle shape and size effects on aluminum oxide-induced enhancement of exciton-plasmon coupling and quantum dot emission

    Energy Technology Data Exchange (ETDEWEB)

    Wing, Waylin J.; Sadeghi, Seyed M., E-mail: seyed.sadeghi@uah.edu; Gutha, Rithvik R.; Campbell, Quinn [Department of Physics, University of Alabama in Huntsville, Huntsville, Alabama 35899 (United States); Mao, Chuanbin [Department of Chemistry and Biochemistry, Stephenson Life Sciences Research Center, University of Oklahoma, Norman, Oklahoma 73019 (United States)

    2015-09-28

    We investigate the shape and size effects of gold metallic nanoparticles on the enhancement of exciton-plasmon coupling and emission of semiconductor quantum dots induced via the simultaneous impact of metal-oxide and plasmonic effects. This enhancement occurs when metallic nanoparticle arrays are separated from the quantum dots by a layered thin film consisting of a high index dielectric material (silicon) and aluminum oxide. Our results show that adding the aluminum oxide layer can increase the degree of polarization of quantum dot emission induced by metallic nanorods by nearly two times, when these nanorods have large aspect ratios. We show when the aspect ratio of these nanorods is reduced to half, the aluminum oxide loses its impact, leading to no improvement in the degree of polarization. These results suggest that a silicon/aluminum oxide layer can significantly enhance exciton-plasmon coupling when quantum dots are in the vicinity of metallic nanoantennas with high aspect ratios.

  16. Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment

    International Nuclear Information System (INIS)

    Lim, Taekyung; Kim, Dongchool; Ju, Sanghyun

    2013-01-01

    Deposition of high-quality dielectric on a graphene channel is an essential technology to overcome structural constraints for the development of nano-electronic devices. In this study, we investigated a method for directly depositing aluminum oxide (Al 2 O 3 ) on a graphene channel through nitrogen plasma treatment. The deposited Al 2 O 3 thin film on graphene demonstrated excellent dielectric properties with negligible charge trapping and de-trapping in the gate insulator. A top-gate-structural graphene transistor was fabricated using Al 2 O 3 as the gate dielectric with nitrogen plasma treatment on graphene channel region, and exhibited p-type transistor characteristics

  17. Thermocurrent dosimetry with high purity aluminum oxide

    International Nuclear Information System (INIS)

    Fullerton, G.D.; Cameron, J.R.; Moran, P.R.

    1976-01-01

    The application of thermocurrent (TC) to ionizing radiation dosimetry was studied. It was shown that TC in alumina (Al 2 O 3 ) has properties that are suited to personnel dosimetry and environmental monitoring. TC dosimeters were made from thin disks of alumina. Aluminum electrodes were evaporated on each side: on one face a high voltage electrode and on the opposite face a measuring electrode encircled by a guard ring. Exposure to ionizing radiation resulted in stored electrons and holes in metastable trapping sites. The signal was read-out by heating the dosimeter with a voltage source and picnometer connected in series between the opposite electrodes. The thermally remobilized charge caused a transient TC. The thermogram, TC versus time or temperature, is similar to a TL glow curve. Either the peak current or the integrated current is a measure of absorbed dose. Six grades of alumina were studied from a total of four commercial suppliers. All six materials displayed radiation induced TC signals. Sapphire of uv-grade quality from the Adolf Meller Co. (AM) had the best dosimetry properties of those investigated. Sources of interference were studied. Thermal fading, residual signal and radiation damage do not limit TC dosimetry. Ultraviolet light can induce a TC response but it is readily excluded with uv-opaque cladding. Improper surface preparation prior to electrode evaporation was shown to cause interference. A spurious TC signal resulted from polarization of surface contaminants. Spurious TC was reduced by improved cleaning prior to electrode application. Polished surfaces resulted in blocking electrodes and caused a sensitivity shift due to radiation induced thermally activated polarization. This was not observed with rough cut surfaces

  18. Photoconductivity of Germanium Nanowire Arrays Incorporated in Anodic Aluminum Oxide

    International Nuclear Information System (INIS)

    Polyakov, B; Prikulis, J; Grigorjeva, L; Millers, D; Daly, B; Holmes, J D; Erts, D

    2007-01-01

    Photoconductivity of germanium nanowire arrays of 50 and 100 nm diameter incorporated into Anodic Aluminum Oxide (AAO) membranes illuminated with visible light is investigated. Photocurrent response to excitation radiation with time constants faster than 10 -4 s were governed by absorption of incident light by nanowires, while photokinetics with time constants of the order of 10 -3 s originates from the photoluminescence of the AAO matrix. Possible applications of nanowire arrays inside AAO as photoresistors are discussed

  19. Standard specification for Nuclear-Grade aluminum oxide powder

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2011-01-01

    1.1 This specification provides the chemical and physical requirements for nuclear-grade aluminum oxide powder intended for fabrication into shapes for nuclear applications. Two specific uses for which this powder is intended are Al2O3 pellets and Al2O 3 − B4C composite pellets for use as thermal insulator or burnable neutron absorbers, respectively. 1.2 The material described herein shall be particulate in nature.

  20. Thin film hydrous metal oxide catalysts

    Science.gov (United States)

    Dosch, Robert G.; Stephens, Howard P.

    1995-01-01

    Thin film (metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  1. Pulsed laser deposition: A viable route for the growth of aluminum antimonide film

    Science.gov (United States)

    Das, S.; Ghosh, B.; Hussain, S.; Bhar, R.; Pal, A. K.

    2015-06-01

    Aluminum antimonide films (AlSb) were successfully deposited on glass substrates by ablating an aluminum antimonide target using pulsed Nd-YAG laser. Films deposited at substrate temperatures 773 K and above showed zinc blende structure. Increase in substrate temperature culminated in grain growth in the films. Photoluminescence studies indicated a strong peak 725 nm ( 1.71 eV) and 803 nm ( 1.55 eV). Films deposited at higher deposition temperatures indicated lower residual strain. Characteristic Raman peaks for AlSb at 151 cm-1 followed by two peaks located at 71 cm-1 and 116 cm-1 were also observed.

  2. Nanosecond laser ablation processes in aluminum-doped zinc-oxide for photovoltaic devices

    Energy Technology Data Exchange (ETDEWEB)

    Canteli, D., E-mail: david.canteli@ciemat.es [Division de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda. Complutense, 22, 28040 Madrid (Spain); Fernandez, S. [Division de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda. Complutense, 22, 28040 Madrid (Spain); Molpeceres, C. [Centro Laser, Universidad Politecnica de Madrid, Ctra. de Valencia Km 7.3, 28031 Madrid (Spain); Torres, I.; Gandia, J.J. [Division de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Avda. Complutense, 22, 28040 Madrid (Spain)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer A study of the ablation of AZO thin films deposited at different temperature conditions with nanosecond UV laser light for photovoltaic devices has been performed. Black-Right-Pointing-Pointer The ablation threshold of AZO thin films was measured and related with the absorption coefficient of the films at the laser wavelength, showing a direct correspondence. Black-Right-Pointing-Pointer A change in the material structure in the areas closest to the edges of laser grooves made in samples deposited at temperatures below 100 Degree-Sign C was observed and studied. - Abstract: Aiming to a future use in thin film solar modules, the processing of aluminum doped zinc oxide thin films with good optoelectronic properties with a nanosecond-pulsed ultraviolet laser has been studied. The ablation threshold fluence of the films has been determined and associated with the material properties. The ablation process has been optimized and grooves with good properties for photovoltaic devices have been obtained. The morphology of the ablated surfaces has been observed by confocal microscopy and its structure has been characterized by Raman spectroscopy. The influence of ablation parameters like focus distance, pulse energy and repetition frequency in the groove morphology has been studied with special attention to the thermal effects on the material structure.

  3. Nanosecond laser ablation processes in aluminum-doped zinc-oxide for photovoltaic devices

    International Nuclear Information System (INIS)

    Canteli, D.; Fernandez, S.; Molpeceres, C.; Torres, I.; Gandía, J.J.

    2012-01-01

    Highlights: ► A study of the ablation of AZO thin films deposited at different temperature conditions with nanosecond UV laser light for photovoltaic devices has been performed. ► The ablation threshold of AZO thin films was measured and related with the absorption coefficient of the films at the laser wavelength, showing a direct correspondence. ► A change in the material structure in the areas closest to the edges of laser grooves made in samples deposited at temperatures below 100 °C was observed and studied. - Abstract: Aiming to a future use in thin film solar modules, the processing of aluminum doped zinc oxide thin films with good optoelectronic properties with a nanosecond-pulsed ultraviolet laser has been studied. The ablation threshold fluence of the films has been determined and associated with the material properties. The ablation process has been optimized and grooves with good properties for photovoltaic devices have been obtained. The morphology of the ablated surfaces has been observed by confocal microscopy and its structure has been characterized by Raman spectroscopy. The influence of ablation parameters like focus distance, pulse energy and repetition frequency in the groove morphology has been studied with special attention to the thermal effects on the material structure.

  4. Irradiation behavior of uranium oxide - Aluminum dispersion fuel

    International Nuclear Information System (INIS)

    Hofman, Gerard L.; Rest, Jeffrey; Snelgrove, James L.

    1996-01-01

    An oxide version of the DART code has been generated in order to assess the irradiation behavior of UO 2 -Al dispersion fuel. The aluminum-fuel interaction models were developed based on U 3 O 8 -Al irradiation data. Deformation of the fuel element occurs due to fuel particle swelling driven by both solid and gaseous fission products and as a consequence of the interaction between the fuel particles and the aluminum matrix. The calculations show that, with the assumption that the correlations derived from U 3 O 8 are valid for UO 2 , the LEU UO 2 -Al with a 42% fuel volume loading (4 g U/cm 3 ) irradiated at fuel temperatures greater than 413 K should undergo breakaway swelling at core burnups greater than about 1.12 x 10 27 fissions m -3 (∼63% 235 U burnup). (author)

  5. Naringin protects memory impairment and mitochondrial oxidative damage against aluminum-induced neurotoxicity in rats.

    Science.gov (United States)

    Prakash, Atish; Shur, Bhargabi; Kumar, Anil

    2013-09-01

    Aluminum has been indicated in neurodegenerative disorders and naringin, a bioflavonoid has been used to reduce neurotoxic effects of aluminum against aluminum chloride-induced rats. Therefore, present study has been designed to explore the possible role of naringin against aluminum-induced cognitive dysfunction and oxidative damage in rats. Aluminum (100 mg/kg) and naringin (40 and 80 mg/kg) drug treatment were administered orally for six weeks to male wistar rats. Various behavioral performance tasks, biochemical, mitochondrial oxidative parameters, and aluminum concentration in the brain were assessed. Aluminum chloride treatment significantly caused cognitive dysfunction and mitochondria oxidative damage as compared to vehicle treated control group. Besides, aluminum chloride treatment significantly increased acetyl cholinesterase activity and aluminum concentration in the brain as compared to sham. Chronic administration of naringin significantly improved cognitive performance and attenuated mitochondria oxidative damage, acetyl cholinesterase activity, and aluminum concentration in aluminum-treated rats as compared to control rats. Results of the study demonstrate neuroprotective potential of naringin against aluminum chloride-induced cognitive dysfunction and mitochondrial oxidative damage.

  6. Properties of Stimulated Emission of the PM567 Dye in Pores of Anodized Aluminum Oxide

    Science.gov (United States)

    Aimukhanov, A. K.; Ibrayev, N. Kh.; Esimbek, A. M.

    2018-02-01

    Properties of the stimulated emission of the PM567 dye in porous aluminum oxide are investigated. It is established that when PM567 molecules are doped into aluminum oxide pores, a small part of dye molecules forms aggregates. The quantum yield of fluorescence of PM567 in Al2O3 is V f = 0.85. The stimulated emission of PM567 in the Al2O3 film is observed in the short-wavelength maximum of the fluorescence band. The threshold of the stimulated emission is 2 MW/cm2. The kinetics of the decay of stimulated emission is measured. It is demonstrated that low-Q lasing of the stimulated emission of PM567 in the film with Q ≥ 1·102 is caused by the fact that the geometry of rays in pores does not correspond to that of complete internal reflection, and hence, the radiative losses increase. The efficiency of lasing of PM567 in Al2O3 is 0.3%.

  7. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U. [Institute of Sensor and Actuator Systems, Vienna University of Technology, Vienna 1040 (Austria); Nicolay, P. [CTR Carinthian Tech Research AG, Villach 9524 (Austria)

    2015-02-14

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

  8. Optical properties and residual stress in aluminum nitride films prepared by alternating-current dual reactive magnetron sputtering.

    Science.gov (United States)

    Tang, Chien-Jen; Jaing, Cheng-Chung; Lee, Kun-Hsien; Lee, Cheng-Chung

    2011-05-01

    Aluminum nitride films were deposited by alternating-current dual reactive magnetron sputtering. The influence of different nitrogen flow and working pressures at a sputtering power of 5 kW on the refractive index, extinction coefficient, crystalline structure, residual stress, and surface roughness of aluminum nitride films was discussed. The aluminum nitride film would have high refractive index, low extinction coefficient and small residual stress at suitable nitrogen flow rate and low working pressure.

  9. Single Particle Studies of Heterogeneous Atmospheric Chemistry on Aluminum Oxide Particles in a Quadrupole Trap

    National Research Council Canada - National Science Library

    Hunter, A

    2000-01-01

    ... on upper atmospheric chemical cycles and ozone. The experimental investigation employs a laboratory quadrupole trap electrodynamic levitation apparatus to study heterogeneous processes on single aluminum oxide particles representative...

  10. Subtractive Plasma-Assisted-Etch Process for Developing High Performance Nanocrystalline Zinc-Oxide Thin-Film-Transistors

    Science.gov (United States)

    2015-03-26

    Materials ....................................................................... 49 Aluminum -Oxide...of common semiconductor materials such as silicon (Si) and gallium- arsenide (GaAs) are 1.1 eV and 1.42 eV respectively [2]. Advantages associated... aluminum -oxide (Al2O3) at temperatures ranging from 200-450℃ [53]. The ZnO TFTs developed in this research utilize ZnO thin-films grown by the PLD method

  11. Standard specification for nuclear-grade aluminum oxide pellets

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2008-01-01

    1.1 This specification applies to pellets of aluminum oxide that may be ultimately used in a reactor core, for example, as filler or spacers within fuel, burnable poison, or control rods. In order to distinguish between the subject pellets and “burnable poison” pellets, it is established that the subject pellets are not intended to be used as neutron-absorbing material. 1.2 The values stated in inch-pound units are to be regarded as standard. The values given in parentheses are mathematical conversions to SI units that are provided for information only and are not considered standard.

  12. Preparation and Surface Analysis of PPY/SDBS Films on Aluminum Substrates

    Directory of Open Access Journals (Sweden)

    Lisete C. Scienza

    2001-09-01

    Full Text Available Polypyrrole films were generated on high purity aluminum substrates under anodic polarization from aqueous electrolytes comprised of pyrrole and sodium dodecylbenzene sulfonate. The methods employed to characterize the polymer films included scanning electron microscopy, Fourier-transform infrared and X-photoelectron spectroscopy and X-ray diffraction. PPY/SDBS films revealed nodular morphology with occasional appearing of "dendrites", high level of protonation, excess of counter-anions ([S]/[N] > [N+]/[N] and high degrees of disorder.

  13. Internal friction study of microplasticity of aluminum thin films on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Nishio, Y.; Tanahashi, K.; Asano, S. [Nagoya Institute of Technology, Nagoya (Japan)

    1995-12-01

    Internal friction in aluminum thin films 0.2 to 2.0 {mu}m thick on silicon substrates has been investigated between 180 and 360 K as a function of strain amplitude by means of a free-decay method of flexural vibration. According to the constitutive equation, the internal friction in the film alone can be evaluated separately from the data on the film/substrate composite. The amplitude-dependent part of internal friction in aluminum films is found in the strain range approximately two orders of magnitude higher than that for bulk aluminum. On the basis of the microplasticity theory, the amplitude-dependent internal friction can be converted into the plastic strain as a function of the effective stress on dislocation motion. The mechanical responses thus obtained for aluminum films show that the plastic strain of the order of 10-9 in creases nonlinearly with increasing stress. These curves tend to shift to a higher stress with decreasing film thickness and also with decreasing temperature, both indicating a suppression of the microplastic deformation. At all temperatures examined, the microflow stress at a constant level of the plastic strain varies inversely with the film thickness, which qualitatively agrees with the variation in macroscopic yield stress. 36 refs., 7 figs.

  14. Fabrication and Corrosion Resistance of Superhydrophobic Hydroxide Zinc Carbonate Film on Aluminum Substrates

    Directory of Open Access Journals (Sweden)

    Jin Liang

    2013-01-01

    Full Text Available Superhydrophobic hydroxide zinc carbonate (HZC films were fabricated on aluminum substrate through a convenient in situ deposition process. Firstly, HZC films with different morphologies were deposited on aluminum substrates through immersing the aluminum substrates perpendicularly into aqueous solution containing zinc nitrate hexahydrate and urea. Secondly, the films were then modified with fluoroalkylsilane (FAS: CH3(CF26(CH23Si(OCH33 molecules by immersing in absolute ethanol solution containing FAS. The morphologies, hydrophobicity, chemical compositions, and bonding states of the films were analyzed by scanning electron microscopy (SEM, water contact angle measurement (CA, Fourier transform infrared spectrometer (FTIR, and X-ray photoelectron spectroscopy (XPS, respectively. It was shown by surface morphological observation that HZC films displayed different microstructures such as microporous structure, rose petal-like structure, block-shaped structure, and pinecone-like structure by altering the deposition condition. A highest water contact angle of 156.2° was obtained after FAS modification. Moreover, the corrosion resistance of the superhydrophobic surface on aluminum substrate was investigated using electrochemical impedance spectroscopy (EIS measurements. The EIS measurements’ results revealed that the superhydrophobic surface considerably improved the corrosion resistance of aluminum.

  15. Electrodeposition of polypyrrole films on aluminum surfaces from a p-toluene sulfonic acid medium

    Directory of Open Access Journals (Sweden)

    Andréa Santos Liu

    2009-01-01

    Full Text Available Electrodeposition of polypyrrole films on aluminum from aqueous solutions containing p-toluene sulfonic acid and pyrrole was performed by cyclic voltammetry and galvanostatic technique. The influence of applied current density on the morphology of the films was studied by Scanning Electron Microscopy. The films displayed a cauliflower-like structure consisting of micro-spherical grains. This structure is related to dopand intercalation in the polymeric chain. Films deposited at higher current density were more susceptible to the formation of pores and defects along the polymeric chain than films deposited at lower current density. These pores allow the penetration of aggressive species, thereby favoring the corrosion process.

  16. Electrical and mechanical stability of aluminum-doped ZnO films grown on flexible substrates by atomic layer deposition

    International Nuclear Information System (INIS)

    Luka, G.; Witkowski, B.S.; Wachnicki, L.; Jakiela, R.; Virt, I.S.; Andrzejczuk, M.; Lewandowska, M.; Godlewski, M.

    2014-01-01

    Highlights: • Transparent and conductive ZnO:Al films were grown by atomic layer deposition. • The films were grown on flexible substrates at low growth temperatures (110–140 °C). • So-obtained films have low resistivities, of the order of 10 −3 Ω cm. • Bending tests indicated a critical bending radius of ≈1.2 cm. • Possible sources of the film resistivity changes upon bending are proposed. - Abstract: Aluminum-doped zinc oxide (AZO) films were grown on polyethylene terephthalate (PET) substrates by atomic layer deposition (ALD) at low deposition temperatures (110–140 °C). The films have low resistivities, ∼10 −3 Ω cm, and high transparency (∼90%) in the visible range. Bending tests indicated a critical bending radius of ≈1.2 cm, below which the resistivity changes became irreversible. The films deposited on PET with additional buffer layer are more stable upon bending and temperature changes

  17. Comparative effects of macro-sized aluminum oxide and aluminum oxide nanoparticles on erythrocyte hemolysis: influence of cell source, temperature, and size

    Energy Technology Data Exchange (ETDEWEB)

    Vinardell, M. P., E-mail: mpvinardellmh@ub.edu; Sordé, A. [Universitat de Barcelona, Departament de Fisiologia, Facultat de Farmàcia (Spain); Díaz, J. [Universitat de Barcelona CCiT, Scientific and Technological Centers (Spain); Baccarin, T.; Mitjans, M. [Universitat de Barcelona, Departament de Fisiologia, Facultat de Farmàcia (Spain)

    2015-02-15

    Al{sub 2}O{sub 3} is the most abundantly produced nanomaterial and has been used in diverse fields, including the medical, military, and industrial sectors. As there are concerns about the health effects of nanoparticles, it is important to understand how they interact with cells, and specifically with red blood cells. The hemolysis induced by three commercial nano-sized aluminum oxide particles (nanopowder 13 nm, nanopowder <50 nm, and nanowire 2–6 × 200–400 nm) was compared to aluminum oxide and has been studied on erythrocytes from humans, rats, and rabbits, in order to elucidate the mechanism of action and the influence of size and shape on hemolytic behavior. The concentrations inducing 50 % hemolysis (HC{sub 50}) were calculated for each compound studied. The most hemolytic aluminum oxide particles were of nanopowder 13, followed by nanowire and nanopowder 50. The addition of albumin to PBS induced a protective effect on hemolysis in all the nano-forms of Al{sub 2}O{sub 3}, but not on Al{sub 2}O{sub 3}. The drop in HC{sub 50} correlated to a decrease in nanomaterial size, which was induced by a reduction of aggregation. Aluminum oxide nanoparticles are less hemolytic than other oxide nanoparticles and behave differently depending on the size and shape of the nanoparticles. The hemolytic behavior of aluminum oxide nanoparticles differs from that of aluminum oxide.

  18. Epitaxial growth of zinc oxide thin films on silicon

    International Nuclear Information System (INIS)

    Jin Chunming; Narayan, Roger; Tiwari, Ashutosh; Zhou Honghui; Kvit, Alex; Narayan, Jagdish

    2005-01-01

    Epitaxial zinc oxide thin films were grown on Si(111) using aluminum nitride and magnesium oxide/titanium nitride buffer layers. The resultant films were examined using transmission electron microscopy, X-ray diffraction, electrical conductivity, and photoluminescence spectroscopy. The following epitaxial relationships were observed in the ZnO/AlN/Si(111) heterostructure: ZnO[0001] parallel AlN[0001] parallel Si[111] along the growth direction, and ZnO[21-bar 1-bar 0] parallel AlN[21-bar 1-bar 0] parallel Si[011-bar] along the in-plane direction. Domain-matching epitaxial growth of TiN on Si(111) substrate allows successful epitaxial growth of MgO and ZnO layers in a ZnO/MgO/TiN/Si(111) heterostructure. The epitaxial relationships observed for this heterostructure were ZnO[0001] parallel MgO/TiN/Si[111] along the growth direction and ZnO[21-bar 1-bar 0] parallel MgO/TiN/Si[011-bar] along in-plane direction. The resultant ZnO films demonstrate excellent electrical and optical properties. ZnO thin films exhibit extremely bright ultraviolet luminescence with relatively weak green-band emission

  19. RBS and NRA of cobalt oxide thin films prepared by the sol-gel process

    International Nuclear Information System (INIS)

    Andrade, E.; Huerta, L.; Pineda, J.C.; Zavala, E.P.; Barrera, E.; Rocha, M. F.; Vargas, C.A.

    2001-01-01

    This work presents a study of cobalt oxide thin films produced by the sol-gel process on aluminum and glass substrates. These films have been analyzed using two ion beam analysis (IBA) techniques: a) a standard RBS 4 He 2 MeV and b) nuclear reaction analysis (NRA) using a 1 MeV deuterium beam. The 12 C(d,p 0 ) 13 C nuclear reaction provides information that carbon is incorporated into the film structure, which could be associated to the sinterization film process. Other film measurements such as optical properties, XRD, and SEM were performed in order to complement the IBA analysis. The results show that cobalt oxide film coatings prepared by this technique have good optical properties as solar absorbers and potential uses in solar energy applications

  20. The role of oxidative debris on graphene oxide films.

    Science.gov (United States)

    López-Díaz, David; Velázquez, Maria Mercedes; Blanco de La Torre, Santiago; Pérez-Pisonero, Ana; Trujillano, Raquel; García Fierro, José Luis; Claramunt, Sergi; Cirera, Albert

    2013-12-02

    We study the effect of oxidative impurities on the properties of graphene oxide and on the graphene oxide Langmuir-Blodgett films (LB). The starting material was grupo Antolín nanofibers (GANF) and the oxidation process was a modified Hummers method to obtain highly oxidized graphene oxide. The purification procedure reported in this work eliminated oxidative impurities decreasing the thickness of the nanoplatelets. The purified material thus obtained presents an oxidation degree similar to that achieved by chemical reduction of the graphite oxide. The purified and non-purified graphene oxides were deposited onto silicon by means of a Langmuir-Blodgett (LB) methodology. The morphology of the LB films was analyzed by field emission scanning microscopy (FE-SEM) and micro-Raman spectroscopy. Our results show that the LB films built by transferring Langmuir monolayers at the liquid-expanded state of the purified material are constituted by close-packed and non-overlapped nanoplatelets. The isotherms of the Langmuir monolayer precursor of the LB films were interpreted according to the Volmer's model. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Water clustering on nanostructured iron oxide films

    DEFF Research Database (Denmark)

    Merte, Lindsay Richard; Bechstein, Ralf; Peng, G.

    2014-01-01

    , but it is not well-understood how these hydroxyl groups and their distribution on a surface affect the molecular-scale structure at the interface. Here we report a study of water clustering on a moire-structured iron oxide thin film with a controlled density of hydroxyl groups. While large amorphous monolayer...... islands form on the bare film, the hydroxylated iron oxide film acts as a hydrophilic nanotemplate, causing the formation of a regular array of ice-like hexameric nanoclusters. The formation of this ordered phase is localized at the nanometre scale; with increasing water coverage, ordered and amorphous...

  2. Aluminum oxide barrier coating on polyethersulfone substrate by atomic layer deposition for barrier property enhancement

    International Nuclear Information System (INIS)

    Kim, Hyun Gi; Kim, Sung Soo

    2011-01-01

    Aluminum oxide layers were deposited on flexible polyethersulfone (PES) substrates via plasma enhanced atomic layer deposition (PEALD) process using trimethylaluminum (TMA) and oxygen as precursor and reactant materials. Several process parameters in PEALD process were investigated in terms of refractive index and layer thickness. Number of process cycle increased the thickness and refractive index of the layer to enhance the barrier properties. Non-physisorbed TMA and unreacted oxygen were purged before and after the plasma reaction, respectively. Identical purge time was applied to TMA and oxygen and it was optimized for 10 s. Thinner and denser layer was formed as substrate temperature increased. However, the PES substrate could be deformed above 120 o C. Aluminum oxide layer formed on PES at optimized conditions have 11.8 nm of thickness and reduced water vapor transmission rate and oxygen transmission rate to below 4 x 10 -3 g/m 2 day and 4 x 10 -3 cm 3 /m 2 day, respectively. Polycarbonate and polyethylene naphthalate films were also tested at optimized conditions, and they also showed quite appreciable barrier properties to be used as plastic substrates.

  3. Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating

    Energy Technology Data Exchange (ETDEWEB)

    Fryauf, David M.; Zhang, Junce; Norris, Kate J.; Diaz Leon, Juan J.; Oye, Michael M.; Kobayashi, Nobuhiko P. [Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California, Santa Cruz, CA (United States); Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA (United States); NASA Ames Research Center, Moffett Field, CA (United States); Wei, Min [Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA (United States); School of Micro-Electronics and Solid-Electronics, University of Electronic Science and Technology of China, Chengdu (China)

    2014-07-15

    This paper describes our finding that optical properties of semiconductor nanowires were modified by depositing a thin layer of metal oxide. Indium phosphide nanowires were grown by metal organic chemical vapor deposition on silicon substrates with gold catalyst resulting in three-dimensional nanowire networks, and optical properties were obtained from the collective nanowire networks. The networks were coated with an aluminum oxide thin film deposited by plasma-enhanced atomic layer deposition. We studied the dependence of the peak wavelength of photoluminescence spectra on the thickness of the oxide coatings. A continuous blue shift in photoluminescence spectra was observed when the thickness of the oxide coating was increased. The observed blue shift is attributed to the Burstein-Moss effect due to increased carrier concentration in the nanowire cores caused by repulsion from intrinsic negative fixed charges located at the inner oxide surface. Samples were further characterized by scanning electron microscopy, Raman spectroscopy, transmission electron microscopy, and selective area diffractometry to better understand the physical mechanisms for the blue shift. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Aluminum powder metallurgy processing

    Energy Technology Data Exchange (ETDEWEB)

    Flumerfelt, J.F.

    1999-02-12

    The objective of this dissertation is to explore the hypothesis that there is a strong linkage between gas atomization processing conditions, as-atomized aluminum powder characteristics, and the consolidation methodology required to make components from aluminum powder. The hypothesis was tested with pure aluminum powders produced by commercial air atomization, commercial inert gas atomization, and gas atomization reaction synthesis (GARS). A comparison of the GARS aluminum powders with the commercial aluminum powders showed the former to exhibit superior powder characteristics. The powders were compared in terms of size and shape, bulk chemistry, surface oxide chemistry and structure, and oxide film thickness. Minimum explosive concentration measurements assessed the dependence of explosibility hazard on surface area, oxide film thickness, and gas atomization processing conditions. The GARS aluminum powders were exposed to different relative humidity levels, demonstrating the effect of atmospheric conditions on post-atomization processing conditions. The GARS aluminum powders were exposed to different relative humidity levels, demonstrating the effect of atmospheric conditions on post-atomization oxidation of aluminum powder. An Al-Ti-Y GARS alloy exposed in ambient air at different temperatures revealed the effect of reactive alloy elements on post-atomization powder oxidation. The pure aluminum powders were consolidated by two different routes, a conventional consolidation process for fabricating aerospace components with aluminum powder and a proposed alternative. The consolidation procedures were compared by evaluating the consolidated microstructures and the corresponding mechanical properties. A low temperature solid state sintering experiment demonstrated that tap densified GARS aluminum powders can form sintering necks between contacting powder particles, unlike the total resistance to sintering of commercial air atomization aluminum powder.

  5. Study on photoluminescence from tris-(8-hydroxyquinoline)aluminum thin films and influence of light

    Science.gov (United States)

    Thangaraju, K.; Kumar, J.; Amaladass, P.; Mohanakrishnan, A. K.; Narayanan, V.

    2006-08-01

    Tris-(8-hydroxyquinoline)aluminum (Alq3), which is the most widely used material in organic electroluminescent devices, has been synthesized. Alq3 thin films have been deposited on glass and silicon substrates. The influence of light exposure on the optical properties of Alq3 thin films has been studied. It is confirmed that the photoluminescence (PL) of Alq3 thin film originates from its two geometrical isomers, namely, facial and meridional, which result from PL decay analysis (biexponential fit). It is also confirmed that the PL from both the isomers decreases for increasing light exposure time leading to the creation of luminescent quencher in Alq3 thin film.

  6. Measurement of quasiparticle transport in aluminum films using tungsten transition-edge sensors

    International Nuclear Information System (INIS)

    Yen, J. J.; Shank, B.; Cabrera, B.; Moffatt, R.; Redl, P.; Young, B. A.; Tortorici, E. C.; Brink, P. L.; Cherry, M.; Tomada, A.; Kreikebaum, J. M.

    2014-01-01

    We report on experimental studies of phonon sensors which utilize quasiparticle diffusion in thin aluminum films connected to tungsten transition-edge-sensors (TESs) operated at 35 mK. We show that basic TES physics and a simple physical model of the overlap region between the W and Al films in our devices enables us to accurately reproduce the experimentally observed pulse shapes from x-rays absorbed in the Al films. We further estimate quasiparticle loss in Al films using a simple diffusion equation approach. These studies allow the design of phonon sensors with improved performance.

  7. Electrochromism of sputtered tungstic oxide films

    International Nuclear Information System (INIS)

    Tatsuoka, Hirokazu; Urabe, Kazuo; Kitao, Michihiko; Yamada, Shoji

    1985-01-01

    Electrochromism of tungstic oxide films were investigated. The films were prerared by r.f. sputtering from compressed WO 3 target under various total pressure and O 2 content of Ar-O 2 mixed sputtering atmosphere. Blue films were obtained under low total pressure of sputtering atmosphere with low content of O 2 . These films could be colored more deeply by the conventional electrochemical procedure, but could not be bleached to transparent states. Transparent films were obtained under the condition of high total pressure or high O 2 content of sputtering atmosphere. The transparent films prepared under high pressure show good electrochromic behavior after aging process. During the aging process, ''passive protons'' are injected into WO 3 matrix, where the ''passive proton'' means that it has no influence on electrochromic absorption band, and is not able to be extracted electrochemically. (author)

  8. Fano resonance in anodic aluminum oxide based photonic crystals.

    Science.gov (United States)

    Shang, Guo Liang; Fei, Guang Tao; Zhang, Yao; Yan, Peng; Xu, Shao Hui; Ouyang, Hao Miao; Zhang, Li De

    2014-01-08

    Anodic aluminum oxide based photonic crystals with periodic porous structure have been prepared using voltage compensation method. The as-prepared sample showed an ultra-narrow photonic bandgap. Asymmetric line-shape profiles of the photonic bandgaps have been observed, which is attributed to Fano resonance between the photonic bandgap state of photonic crystal and continuum scattering state of porous structure. And the exhibited Fano resonance shows more clearly when the sample is saturated ethanol gas than air-filled. Further theoretical analysis by transfer matrix method verified these results. These findings provide a better understanding on the nature of photonic bandgaps of photonic crystals made up of porous materials, in which the porous structures not only exist as layers of effective-refractive-index material providing Bragg scattering, but also provide a continuum light scattering state to interact with Bragg scattering state to show an asymmetric line-shape profile.

  9. Low oxidation state aluminum-containing cluster anions: Cp∗AlnH-, n = 1-3

    Science.gov (United States)

    Zhang, Xinxing; Ganteför, Gerd; Eichhorn, Bryan; Mayo, Dennis; Sawyer, William H.; Gill, Ann F.; Kandalam, Anil K.; Schnöckel, Hansgeorg; Bowen, Kit

    2016-08-01

    Three new, low oxidation state, aluminum-containing cluster anions, Cp*AlnH-, n = 1-3, were prepared via reactions between aluminum hydride cluster anions, AlnHm-, and Cp*H ligands. These were characterized by mass spectrometry, anion photoelectron spectroscopy, and density functional theory based calculations. Agreement between the experimentally and theoretically determined vertical detachment energies and adiabatic detachment energies validated the computed geometrical structures. Reactions between aluminum hydride cluster anions and ligands provide a new avenue for discovering low oxidation state, ligated aluminum clusters.

  10. Preparation of Superhydrophobic Polymeric Film on Aluminum Plates by Electrochemical Polymerization

    Directory of Open Access Journals (Sweden)

    Juan Xu

    2009-11-01

    Full Text Available 6-(N-Allyl-1,1,2,2-tetrahydroperfluorododecylamino-1,3,5-triazine-2,4-dithiol monosodium (ATP was used to prepare polymeric thin films on pure aluminum plates to achieve a superhydrophobic surface. The electrochemical polymerization process of ATP on aluminum plates in NaNO2 aqueous solution and the formation of poly(6-(N-allyl-1,1,2,2-tetrahydroperfluorododecylamino-1,3,5-triazine-2,4-dithiol (PATP thin film were studied by means of optical ellipsometry and film weight. The chemical structure of the polymeric film is investigated using FT-IR spectra and X-ray photoelectron spectroscopy (XPS. Contact angle goniometry was applied to measure the contact angles with distilled water drops at ambient temperature. The experimental results indicate that the polymeric film formed on pure aluminum plates exhibits superhydrophobic properties with a distilled water contact angle of 153°. The electrochemical polymerization process is time-saving, inexpensive, environmentally friendly and fairly convenient to carry out. It is expected that this technique will advance the production of superhydrophobic materials with new applications on a large scale. Moreover, this kind of polymeric thin film can be used as a dielectric material due to its insulating features.

  11. Investigation of electrodeposited cuprous oxide thin films

    Science.gov (United States)

    Mortensen, Emma L.

    This dissertation focuses on improvements to electrodeposited cuprous oxide as a candidate for the absorber layer for a thin film solar cell that could be integrated into a mechanical solar cell stack. Cuprous oxide (Cu2O) is an earth abundant material that has a bandgap of 2 eV with absorption coefficients around 102-106 cm-1. This bandgap is not optimized for use as a single-junction solar cell, but could be ideal for use in a tandem solar cell device. The theoretical efficiency of a material with a bandgap of 2.0 eV is 20%. The greatest actual efficiency that has been achieved for a Cu2O solar cell is only 8.1%. For the present work the primary focus has been on improving the microstructure of the absorber layer film. The Cu2O films were fabricated using electrodeposition. A seeding layer was developed using gold (Au); which was manipulated into nano-islands and used as the substrate for the Cu2O electrodeposition. The films were characterized and compared to determine the growth mechanism of each film using scanning electron microscopy (SEM). X-ray diffraction (XRD) was used to establish and compare the chemical phases that were present in each of the films. The crystal structure of the Cu2O film grown on gold was explored using transmission electron microscopy (TEM), and this helped confirm the effect that the gold had on the growth of Cu2O. The Tauc method was then used to determine the bandgap of the films of Cu2O grown on both substrates and this showed that the Au based Cu2O film was a superior film. Electrical tests were also completed using a solar simulator and this established that the film grown on gold exhibited photoconductivity that was not seen on the film without gold. In addition, for this thesis, a method for depositing an n-type Cu2O film, based on a Cu-metal solution-boiling process, was investigated. Three forms of copper were tested: a sheet of copper, electrodeposited copper, and sputtered copper. The chemical phases were observed using

  12. Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites.

    Directory of Open Access Journals (Sweden)

    Khaled Sayed Elbadawi Ramadan

    Full Text Available Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002 crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m(-2 and 0.9±0.1 C m(-2, for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

  13. Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites.

    Science.gov (United States)

    Ramadan, Khaled Sayed Elbadawi; Evoy, Stephane

    2015-01-01

    Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m(-2) and 0.9±0.1 C m(-2), for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

  14. Characterization of chitosan-magnesium aluminum silicate nanocomposite films for buccal delivery of nicotine

    DEFF Research Database (Denmark)

    Pongjanyakul, Thaned; Khunawattanakul, Wanwisa; Strachan, Clare J

    2013-01-01

    The objective of this study was to prepare and characterize chitosan-magnesium aluminum silicate (CS-MAS) nanocomposite films as a buccal delivery system for nicotine (NCT). The effects of the CS-MAS ratio on the physicochemical properties, release and permeation, as well as on the mucoadhesive...

  15. Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Harman, J.P.; Kabulski, A. (West Virginia U., Morgantown, WV); Pagan, V.R. (West Virginia U., Morgantown, WV); Famouri, K. (West Virginia U., Morgantown, WV); Kasarla, K.R.; Rodak, L.E. (West Virginia U., Morgantown, WV); Hensel, J.P.; Korakakis, D.

    2008-07-01

    The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

  16. Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Harman, J.; Kabulski, A.; Pagán, V. R.; Famouri, P.; Kasarla, K. R.; Rodak, L. E.; Peter Hensel, J.; Korakakis, D.

    2008-01-01

    The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

  17. Laser patterning of superconducting oxide films

    International Nuclear Information System (INIS)

    Gupta, A.; Hussey, B.W.; Koren, G.; Cooper, E.I.; Jagannathan, R.

    1988-01-01

    The focused output of an argon ion laser (514.5 nm) has been used for wiring superconducting lines of Y/sub 1/Ba/sub 2/CU/sub 3/O/sub 7-δ/ using films prepared from nitrate and trifluoroacetate solution precursors. A stoichiometric solution of the precursors is sprayed or spun on to the substrate to form a film. The film is patterned by irradiating in selected areas to convert the irradiated layers to an intermediate oxide or fluoride state, the nonirradiated areas being unchanged. The nonirradiated areas are then dissolved away, leaving a pattern of the oxide or fluoride material. This patterned layer is converted to the superconducting 1-2-3 oxide in a subsequent annealing step. Maskless patterning of superconducting films has also been demonstrated by laser-assisted etching of the films in aqueous KOH solution. Although superconductivity is destroyed when the films are placed in solution, it can be restored after a brief anneal in oxygen

  18. Microstructure and corrosion resistance of a fluorosilane modified silane-graphene film on 2024 aluminum alloy

    Science.gov (United States)

    Dun, Yuchao; Zhao, Xuhui; Tang, Yuming; Dino, Sahib; Zuo, Yu

    2018-04-01

    Heptadecafluorodecyl trimethoxysilane (FAS-17) was incorporated into γ-(2,3-epoxypropoxy) propyltrimethoxysilane/graphene (GPTMS/rGO) by adding pre-hydrolyzed FAS-17 solution in GPTMS solution, and a hybrid silane-graphene film (FG/rGO) was prepared on 2024 aluminum alloy surface. The FG/rGO film showed better thermal shock resistance, good adhesion force and high micro-hardness, compared with GPTMS/rGO film. In neutral 3.5 wt% NaCl solution, the corrosion current density for 2024 AA sample with FG/rGO film was 3.40 × 10-3 μA/cm2, which is about one fifth of that for the sample with GPTMS/rGO film. In acidic and alkaline NaCl solutions, the FG/rGO film also showed obviously better corrosion resistance than GPTMS/rGO film. EIS results confirm that the FG/rGO film showed longer performance than GPTMS/rGO film for 2024 AA in NaCl solution. The hydrophobic FAS-17 increased water contact angle of the film surface from 68° to 113°, and changed the stacking structure of graphene in the film. The higher crosslink degree and less interfaces promoted the barrier property of FG/rGO film against aggressive ions and prolonged the performance time in NaCl solution.

  19. Aluminum-doped hydrogenated microcrystalline cubic silicon carbide films deposited by hot wire CVD

    International Nuclear Information System (INIS)

    Miyajima, Shinsuke; Yamada, Akira; Konagai, Makoto

    2006-01-01

    Aluminum-doped hydrogenated microcrystalline cubic silicon carbide (Al-doped μc-3C-SiC:H) films were successfully deposited by hot wire chemical vapor deposition using a gas mixture of monomethylsilane, hydrogen and trimethylaluminum (TMA). Deposition rate and infrared absorption measurements indicate that radicals generated from TMA extract hydrogen atoms from the growing surface of the films. Infrared absorption and secondary ion mass spectroscopy measurements suggest the existence of Al-H complexes in the deposited film. The dark conductivity was found to be below 10 - 7 S/cm for as-deposited films and 10 - 6 -10 - 4 S/cm for annealed films. Our studies indicate the possibility of forming p-type μc-3C-SiC:H films on glass substrates at process temperature below 400 deg. C

  20. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    OpenAIRE

    Boltz, Janika

    2011-01-01

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO2 and TiO2. In order to ach...

  1. Crystallization kinetics of amorphous aluminum-tungsten thin films

    Energy Technology Data Exchange (ETDEWEB)

    Car, T.; Radic, N. [Rugjer Boskovic Inst., Zagreb (Croatia). Div. of Mater. Sci.; Ivkov, J. [Institute of Physics, Bijenicka 46, P.O.B. 304, HR-10000 Zagreb (Croatia); Babic, E.; Tonejc, A. [Faculty of Sciences, Physics Department, Bijenicka 32, P.O.B. 162, HR-10000 Zagreb (Croatia)

    1999-01-01

    Crystallization kinetics of the amorphous Al-W thin films under non-isothermal conditions was examined by continuous in situ electrical resistance measurements in vacuum. The estimated crystallization temperature of amorphous films in the composition series of the Al{sub 82}W{sub 18} to Al{sub 62}W{sub 38} compounds ranged from 800 K to 920 K. The activation energy for the crystallization and the Avrami exponent were determined. The results indicated that the crystallization mechanism in films with higher tungsten content was a diffusion-controlled process, whereas in films with the composition similar to the stoichiometric compound (Al{sub 4}W), the interface-controlled crystallization probably occurred. (orig.) With 4 figs., 1 tab., 26 refs.

  2. Angular dependence of preferential sputtering and composition in aluminum--copper thin films

    International Nuclear Information System (INIS)

    Rudeck, P.J.; Harper, J.M.E.; Fryer, P.M.

    1989-01-01

    The copper concentration in aluminum--copper alloys can be altered by ion bombardment during film deposition. We have measured the sputtering yields of aluminum and copper in Al--Cu alloys as a function of the Cu concentration (5--13 at. %) and the angle of ion incidence (0--40 0 from normal). During deposition, the films were partially resputtered by 500-eV Ar + ion bombardment from a Kaufman ion source. We found that the Cu sputtering yield decreases by up to a factor of 10 in the alloy, relative to elemental Cu. The Al sputtering yield remains close to the elemental value. The net effect is a strong preferential sputtering of Al relative to Cu, which enhances the Cu concentration in an ion bombarded film. The Al/Cu sputtering yield ratio for normal incidence ion bombardment ranges from 3 to 5 as a function of Cu concentration. This ratio decreases with increasing angle of incidence to as low as 2 for 40 0 incident ions. However, since a higher fraction of the film is resputtered from a sloping surface, a higher Cu concentration is found on a sloping surface relative to a flat surface. These results show that in multicomponent film deposition under ion bombardment, the film composition will vary as a function of the surface topography. We will also show how the level of argon left trapped in the films varies inversely with respect to the ion flux

  3. Oxidation of ligand-protected aluminum clusters: An ab initio molecular dynamics study

    International Nuclear Information System (INIS)

    Alnemrat, Sufian; Hooper, Joseph P.

    2014-01-01

    We report Car-Parrinello molecular dynamics simulations of the oxidation of ligand-protected aluminum clusters that form a prototypical cluster-assembled material. These clusters contain a small aluminum core surrounded by a monolayer of organic ligand. The aromatic cyclopentadienyl ligands form a strong bond with surface Al atoms, giving rise to an organometallic cluster that crystallizes into a low-symmetry solid and is briefly stable in air before oxidizing. Our calculations of isolated aluminum/cyclopentadienyl clusters reacting with oxygen show minimal reaction between the ligand and O 2 molecules at simulation temperatures of 500 and 1000 K. In all cases, the reaction pathway involves O 2 diffusing through the ligand barrier, splitting into atomic oxygen upon contact with the aluminum, and forming an oxide cluster with aluminum/ligand bonds still largely intact. Loss of individual aluminum-ligand units, as expected from unimolecular decomposition calculations, is not observed except following significant oxidation. These calculations highlight the role of the ligand in providing a steric barrier against oxidizers and in maintaining the large aluminum surface area of the solid-state cluster material

  4. Pattern formation under residual compressive stress in free sustained aluminum films

    International Nuclear Information System (INIS)

    Yu Senjiang; Ye Quanlin; Zhang Yongju; Cai Pinggen; Xu Xiaojun; Chen Jiangxing; Ye Gaoxiang

    2005-01-01

    A nearly free sustained aluminum (Al) film system has been successfully fabricated by vapor phase deposition of Al atoms on silicone oil surfaces and an unusual type of ordered patterns at the micrometer scale has been systematically studied. The ordered patterns are composed of a large number of parallel key-shaped domains and possess a sandwiched structure. The nucleation and growth of the patterns are very susceptible to the growth period, deposition rate, nominal film thickness and location of the film. The experiment shows that the ordered patterns are induced by the residual compressive stress in the film owing to contraction of the liquid surface after deposition. The appearance of these stress relief patterns generally represents the stress distribution in the nearly free sustained Al films, which mainly results from the characteristic boundary condition and the nearly zero adhesion of the solid-liquid interface

  5. Aluminum oxide nanostructured microcantilever arrays for nanomechanical-based sensing.

    Science.gov (United States)

    Long, Zhou; Hill, Kasey; Sepaniak, Michael J

    2010-05-15

    Novel nanostructured microcantilever (MC) surfaces were developed by modifying the active side of the MCs with aluminum oxide nanoparticles (AONP) for purposes of enhancing sensitivity in nanomechanical-based sensing. Uniform layers of AONP were spin coated and chemically immobilized on the surfaces of MCs with tetramethoxysilane (TMOS) as a cross-linker. Optimization studies on MC modification were performed for better surface uniformity and higher surface area, based on scanning electron microscope (SEM) images. The AONP-modified MC array (MCA) were subsequently functionalized by being immersed in parallel configured capillaries filled with different reagents for immobilizing chemical or biological receptors onto the MC surfaces. A MCA prepared for chemical sensing was exposed to the samples made of headspace vapor of different volatile organic compounds (VOCs). The characteristic response signatures for each gas phase VOC analyte showed substantial diversity. Immersion time in the capillary and the chemical nature of the reagents used for functionalization were both optimized to achieve the highest sensitivity and long-term reproducibility in nanomechanical responses to the test analytes. A second MCA functionalized with two different immunological receptors was prepared and exposed to three biological analytes in the liquid phase, with a highly selective response obtained for each analyte. Fluorescence microscope images and FT-IR spectra were used in this work to validate the controlled, variable chemical nature of the MC surfaces.

  6. Discharge behaviors during plasma electrolytic oxidation on aluminum alloy

    International Nuclear Information System (INIS)

    Liu, Run; Wu, Jie; Xue, Wenbin; Qu, Yao; Yang, Chaolin; Wang, Bin; Wu, Xianying

    2014-01-01

    A plasma electrolytic oxidation (PEO) process was performed on the 2024 aluminum alloy in silicate electrolyte to fabricate ceramic coatings under a constant voltage. Optical emission spectroscopy (OES) was employed to evaluate the characteristics of plasma discharge during PEO process. The plasma electron temperature and density were obtained by analyzing the spectral lines of OES, and the atomic ionization degree in discharge zone was calculated in terms of Saha thermal ionization equation. The illumination intensity of plasma discharge and the temperature in the interior of alloy were measured. Combining the surface morphology and cross-sectional microstructure with the optical emission spectra and illumination at different discharge stage, a discharge model in the growth of PEO ceramic coatings was proposed. It is found that there are two discharge modes of type A with small spark size and type B with large spark size, and the latter only appears in the intermediate stage of PEO process. The illumination intensity has a maximum value in the initial stage of oxidation with many sparks of discharge type A. The electron temperature in plasma discharge zone is about 3000 K–7000 K and atomic ionization degree of Al is about 2.0 × 10 −5 –7.2 × 10 −3 , which depend on discharge stage. The discharge type B plays a key role on the electron temperature and atomic ionization degree. The electron density keeps stable in the range of about 8.5 × 10 21  m −3 –2.6 × 10 22  m −3 . - Highlights: • The characteristics of PEO plasma discharge was evaluated by OES. • Electron temperature, concentration, atomic ionization degree were calculated. • Discharge model for the growth of PEO coatings was proposed. • Temperature in the interior of alloy during PEO process was measured

  7. Charging effect of aluminum nitride thin films containing Al nanocrystals.

    Science.gov (United States)

    Liu, Y; Chen, T P; Ding, L; Wong, J I; Yang, M; Liu, Z; Li, Y B; Zhang, S

    2010-01-01

    In this work, the Al-rich AIN thin film is deposited on Si substrate by radio frequency (RF) sputtering to form a metal-insulator-semiconductor (MIS) structure. Al nanocrystals (nc-Al) are formed and embedded in the AIN thin film. Charge trapping/detrapping in the nc-Al leads to a shift in the flat-band voltage (VFB) of the MIS structure. The charge storage ability of the AIN thin films containing Al nanocrystals provides the possibility of memory applications. On the other hand, charge trapping in nc-Al reduces the current conduction because of the breaking of some tunneling paths due to Coulomb blockade effect and the current conduction evolves with a trend towards one-dimensional transport.

  8. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Boltz, Janika

    2011-12-12

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post

  9. Atomic layer deposition as pore diameter adjustment tool for nanoporous aluminum oxide injection molding masks.

    Science.gov (United States)

    Miikkulainen, Ville; Rasilainen, Tiina; Puukilainen, Esa; Suvanto, Mika; Pakkanen, Tapani A

    2008-05-06

    The wetting properties of polypropylene (PP) surfaces were modified by adjusting the dimensions of the surface nanostructure. The nanostructures were generated by injection molding with nanoporous anodized aluminum oxide (AAO) as the mold insert. Atomic layer deposition (ALD) of molybdenum nitride film was used to control the pore diameters of the AAO inserts. The original 50-nm pore diameter of AAO was adjusted by depositing films of thickness 5, 10, and 15 nm on AAO. Bis(tert-butylimido)-bis(dimethylamido)molybdenum and ammonia were used as precursors in deposition. The resulting pore diameters in the nitride-coated AAO inserts were 40, 30, and 20 nm, respectively. Injection molding of PP was conducted with the coated inserts, as well as with the non-coated insert. Besides the pore diameter, the injection mold temperature was varied with temperatures of 50, 70, and 90 degrees C tested. Water contact angles of PP casts were measured and compared with theoretical contact angles calculated from Wenzel and Cassie-Baxter theories. The highest contact angle, 140 degrees , was observed for PP molded with the AAO mold insert with 30-nm pore diameter. The Cassie-Baxter theory showed better fit than the Wenzel theory to the experimental values. With the optimal AAO mask, the nanofeatures in the molded PP pieces were 100 nm high. In explanation of this finding, it is suggested that some sticking and stretching of the nanofeatures occurs during the molding. Increase in the mold temperature increased the contact angle.

  10. Photoconduction in silicon rich oxide films

    Science.gov (United States)

    Luna-López, J. A.; Aceves-Mijares, M.; Carrillo-López, J.; Morales-Sanchez, A.; Flores-Gracia, F. J.; Garcia-Salgado, G.

    2009-05-01

    Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH4 (silane) and N2O (nitrous oxide) as reactive gases at 700 °. The gas flow ratio, Ro = [N2O]/[SiH4] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to Ro = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies (~3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

  11. Photoconduction in silicon rich oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Luna-Lopez, J A; Carrillo-Lopez, J; Flores-Gracia, F J; Garcia-Salgado, G [CIDS-ICUAP, Benemerita Universidad Autonoma de Puebla. Ed. 103 D and C, col. San Manuel, Puebla, Pue. Mexico 72570 (Mexico); Aceves-Mijares, M; Morales-Sanchez, A, E-mail: jluna@buap.siu.m, E-mail: jluna@inaoep.m [INAOE, Luis Enrique Erro No. 1, Apdo. 51, Tonantzintla, Puebla, Mexico 72000 (Mexico)

    2009-05-01

    Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH{sub 4} (silane) and N{sub 2}O (nitrous oxide) as reactive gases at 700 {sup 0}. The gas flow ratio, Ro = [N{sub 2}O]/[SiH{sub 4}] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to R{sub o} = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies ({approx}3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

  12. Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Broas, Mikael, E-mail: mikael.broas@aalto.fi; Vuorinen, Vesa [Department of Electrical Engineering and Automation, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sippola, Perttu; Pyymaki Perros, Alexander; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sajavaara, Timo [Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40014 Jyväskylä (Finland); Paulasto-Kröckel, Mervi [Department of Electrical Engineering and Automation, Aalto University. P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland)

    2016-07-15

    Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N{sub 2}:H{sub 2} plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the AlN films. Furthermore, dinitrogen triple bonds were identified with infrared spectroscopy in the films. The triple bonds broke after annealing at 1000 °C for 1 h which likely caused enhanced hydrolysis of the films. The nanostructure of the films was identified to be amorphous in the as-deposited state and to become nanocrystalline after 1 h of annealing at 1000 °C.

  13. A Study on the Anodic Dissolution of Aluminum(II)

    International Nuclear Information System (INIS)

    Nam, C. W.; Park, C. S.; Park, C. S.

    1978-01-01

    In many cases oxide films formed on metals in atmosphere or aqueous solution are chemically inactive, especially it is the case with aluminum. In this study, anodic dissolution of aluminum was done using various electrolyte and cathode, mechanism of which was examined. As a consequence, oxide film on aluminum surface was dissolved together with the dissolution reaction of metal by the anodic current. It was shown that the dissolution reaction due to the contact between electrolyte and metal happened in the same time

  14. Structure stability and corrosion inhibition of super-hydrophobic film on aluminum in seawater

    Energy Technology Data Exchange (ETDEWEB)

    Yin Yansheng [Institute of Ocean Materials and Engineering, Shanghai Maritime University, Shanghai 200135 (China)], E-mail: yys2003ouc@163.com; Liu Tao; Chen Shougang; Liu Tong; Cheng Sha [Institute of Materials Science and Engineering, Ocean University of China, Qingdao 266100 (China)

    2008-12-30

    A novel and stable super-hydrophobic film was prepared by myristic acid (CH{sub 3}(CH{sub 2}){sub 12}COOH, mya) chemically adsorbed onto the anodized aluminum surface. The static contact angle for seawater on the surface was measured to be 154 deg. As evidenced by molecular dynamics (MD) simulations and electrochemical impedance spectroscopy (EIS), the effect of ethanol solvent on the film stability was proved. The surface structure and composition were then characterized by means of scanning electron microscopy (SEM) with energy dispersive X-ray spectrum (EDS) and atomic force microscope (AFM). The electrochemical measurements showed that the super-hydrophobic surface significantly decreased the corrosion currents densities (i{sub corr}), corrosion rates and double layer capacitance (C{sub dl}), as simultaneously increased the values of polarization resistance (R{sub ct}) of aluminum in sterile seawater.

  15. Behavior of aluminum oxide, intermetallics and voids in Cu-Al wire bonds

    International Nuclear Information System (INIS)

    Xu, H.; Liu, C.; Silberschmidt, V.V.; Pramana, S.S.; White, T.J.; Chen, Z.; Acoff, V.L.

    2011-01-01

    Nanoscale interfacial evolution in Cu-Al wire bonds during isothermal annealing from 175 deg. C to 250 deg. C was investigated by high resolution transmission electron microscopy (HRTEM). The native aluminum oxide film (∼5 nm thick) of the Al pad migrates towards the Cu ball during annealing. The formation of intermetallic compounds (IMC) is controlled by Cu diffusion, where the kinetics obey a parabolic growth law until complete consumption of the Al pad. The activation energies to initiate crystallization of CuAl 2 and Cu 9 Al 4 are 60.66 kJ mol -1 and 75.61 kJ mol -1 , respectively. During IMC development, Cu 9 Al 4 emerges as a second layer and grows together with the initial CuAl 2 . When Al is completely consumed, CuAl 2 transforms to Cu 9 Al 4 , which is the terminal product. Unlike the excessive void growth in Au-Al bonds, only a few voids nucleate in Cu-Al bonds after long-term annealing at high temperatures (e.g., 250 o C for 25 h), and their diameters are usually in the range of tens of nanometers. This is due to the lower oxidation rate and volumetric shrinkage of Cu-Al IMC compared with Au-Al IMC.

  16. Aluminum-Doped Zinc Oxide as Highly Stable Electron Collection Layer for Perovskite Solar Cells.

    Science.gov (United States)

    Zhao, Xingyue; Shen, Heping; Zhang, Ye; Li, Xin; Zhao, Xiaochong; Tai, Meiqian; Li, Jingfeng; Li, Jianbao; Li, Xin; Lin, Hong

    2016-03-01

    Although low-temperature, solution-processed zinc oxide (ZnO) has been widely adopted as the electron collection layer (ECL) in perovskite solar cells (PSCs) because of its simple synthesis and excellent electrical properties such as high charge mobility, the thermal stability of the perovskite films deposited atop ZnO layer remains as a major issue. Herein, we addressed this problem by employing aluminum-doped zinc oxide (AZO) as the ECL and obtained extraordinarily thermally stable perovskite layers. The improvement of the thermal stability was ascribed to diminish of the Lewis acid-base chemical reaction between perovskite and ECL. Notably, the outstanding transmittance and conductivity also render AZO layer as an ideal candidate for transparent conductive electrodes, which enables a simplified cell structure featuring glass/AZO/perovskite/Spiro-OMeTAD/Au. Optimization of the perovskite layer leads to an excellent and repeatable photovoltaic performance, with the champion cell exhibiting an open-circuit voltage (Voc) of 0.94 V, a short-circuit current (Jsc) of 20.2 mA cm(-2), a fill factor (FF) of 0.67, and an overall power conversion efficiency (PCE) of 12.6% under standard 1 sun illumination. It was also revealed by steady-state and time-resolved photoluminescence that the AZO/perovskite interface resulted in less quenching than that between perovskite and hole transport material.

  17. High optical transmittance of aluminum ultrathin film with hexagonal nanohole arrays as transparent electrode

    KAUST Repository

    Du, Qing Guo

    2016-02-24

    We fabricate samples of aluminum ultrathin films with hexagonal nanohole arrays and characterize the transmission performance. High optical transmittance larger than 60% over a broad wavelength range from 430 nm to 750 nm is attained experimentally. The Fano-type resonance of the excited surface plasmon plaritons and the directly transmitted light attribute to both of the broadband transmission enhancement and the transmission suppression dips. © 2016 Optical Society of America.

  18. Study on the fabrication of back surface reflectors in nano-crystalline silicon thin-film solar cells by using random texturing aluminum anodization

    Science.gov (United States)

    Shin, Kang Sik; Jang, Eunseok; Cho, Jun-Sik; Yoo, Jinsu; Park, Joo Hyung; Byungsung, O.

    2015-09-01

    In recent decades, researchers have improved the efficiency of amorphous silicon solar cells in many ways. One of the easiest and most practical methods to improve solar-cell efficiency is adopting a back surface reflector (BSR) as the bottom layer or as the substrate. The BSR reflects the incident light back to the absorber layer in a solar cell, thus elongating the light path and causing the so-called "light trapping effect". The elongation of the light path in certain wavelength ranges can be enhanced with the proper scale of BSR surface structure or morphology. An aluminum substrate with a surface modified by aluminum anodizing is used to improve the optical properties for applications in amorphous silicon solar cells as a BSR in this research due to the high reflectivity and the low material cost. The solar cells with a BSR were formed and analyzed by using the following procedures: First, the surface of the aluminum substrate was degreased by using acetone, ethanol and distilled water, and it was chemically polished in a dilute alkali solution. After the cleaning process, the aluminum surface's morphology was modified by using a controlled anodization in a dilute acid solution to form oxide on the surface. The oxidized film was etched off by using an alkali solution to leave an aluminum surface with randomly-ordered dimple-patterns of approximately one micrometer in size. The anodizing conditions and the anodized aluminum surfaces after the oxide layer had been removed were systematically investigated according to the applied voltage. Finally, amorphous silicon solar cells were deposited on a modified aluminum plate by using dc magnetron sputtering. The surfaces of the anodized aluminum were observed by using field-emission scanning electron microscopy. The total and the diffuse reflectances of the surface-modified aluminum sheets were measured by using UV spectroscopy. We observed that the diffuse reflectances increased with increasing anodizing voltage. The

  19. Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride – Technology and piezoelectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Stoeckel, C., E-mail: chris.stoeckel@zfm.tu-chemnitz.de; Kaufmann, C.; Hahn, R.; Schulze, R. [Center for Microtechnologies, Chemnitz University of Technology, Chemnitz 09126 (Germany); Billep, D. [Fraunhofer Institute for Electronic Nano Systems (ENAS), Chemnitz 09126 (Germany); Gessner, T. [Center for Microtechnologies, Chemnitz University of Technology, Chemnitz 09126 (Germany); Fraunhofer Institute for Electronic Nano Systems (ENAS), Chemnitz 09126 (Germany)

    2014-07-21

    Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d{sub 31} is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d{sub 33}.

  20. Adhesion and corrosion studies of a lithium based conversion coating film on the 2024 aluminum alloy

    International Nuclear Information System (INIS)

    Castro, M.R.S.; Nogueira, J.C.; Thim, G.P.; Oliveira, M.A.S.

    2004-01-01

    AA2024-T3-aluminum alloy surfaces were coated using non-chromate and chromate conversion coatings. All coatings were painted with the 10P4-2-primer epoxy resin. Independent on the film formation process, films passed on the substrate/conversion coating wet tape adhesion test. However, only the chromate conversion coating passed on the conversion coating/primer epoxy resin adhesion test. Electrochemical corrosion measurements showed that non-chromate conversion coated surfaces present lower corrosion current density, bigger polarization resistance and less negative corrosion potential than chromate conversion coated surfaces

  1. Luminescent down shifting effect of Ce-doped yttrium aluminum garnet thin films on solar cells

    International Nuclear Information System (INIS)

    Shao, Guojian; Lou, Chaogang; Kang, Jian; Zhang, Hao

    2015-01-01

    Ce-doped yttrium aluminum garnet (YAG:Ce) thin films as luminescent down shifting (LDS) materials are introduced into the module of crystalline silicon solar cells. The films are deposited by RF magnetron sputtering on the lower surface of the quartz glass. They convert ultraviolet and blue light into yellow light. Experiments show that the introduction of YAG:Ce films improves the conversion efficiency from 18.45% of the cells to 19.27% of the module. The increasing efficiency is attributed to LDS effect of YAG:Ce films and the reduced reflection of short wavelength photons. Two intentionally selected samples with similar reflectivities are used to evaluate roughly the effect of LDS alone on the solar cells, which leads to a relative increase by 2.68% in the conversion efficiency

  2. Edge Effects on Growth of Ordered Stress Relief Patterns in Free Sustained Aluminum Films

    International Nuclear Information System (INIS)

    Sen-Jiang, Yu; Miao-Gen, Chen; Yong-Ju, Zhang

    2010-01-01

    An unusual form of ordered stress relief patterns is observed in a nearly free sustained aluminum film system deposited on liquid substrates by the thermal evaporation method. The edge effects on the growth of the ordered patterns are systematically studied. It is found that the patterns initiate from the film edges, preexisting ordered patterns, or other imperfections of the film. When the patterns extend in the film regions, they decay gradually and finally disappear. If they develop along the boundaries, however, the sizes are almost unchanged over several millimeters. The stress relief patterns look like rectangular waves in appearance, which are proven to evolve from sinusoidal to triangular waves gradually. The morphological evolution can be well explained by the general theory of buckling of plates. (condensed matter: structure, mechanical and thermal properties)

  3. Electrochemical synthesis of magnetic nanostructures using anodic aluminum oxide templates

    Science.gov (United States)

    Gong, Jie

    In this dissertation, template electrodeposition was employed to fabricate high quality magnetic nanostructures suited for the reliable investigation of novel spintronics phenomena such as CIMS, BMR, and CPP-GMR. Several critical aspects/steps relating to the synthesis process were investigated in this work. In order to obtain high quality magnetic nanostructures, free-standing and Si-supported anodic aluminum oxide templates with closely controlled pore diameters, lengths, as well as constriction sizes, were synthesized by anodization, followed by appropriate post-processing. The pore opening size on the barrier layer can be controlled down to 5 nm by ion beam etching. After optimization of the compositional, structural, and magnetic properties of homogeneous FeCoNiCu layers electrodeposited under different conditions, the pulsed deposition process of FeCoNI/Cu multilayers on n-Si was studied. The influence of Cu deposition potential and Fe2+ concentration on microstructure, chemical and electrochemical properties, magnetic properties, and hence magnetotransport properties were assessed. The dissolution of the FM layer during potential transition was minimized in order to control interface sharpness. Combined with the systematic sublayer thickness and FM layer composition optimization, unprecedented GMR sensitivity of 0.11%/Oe at 5-15 Oe was obtained. Growth of multilayer nanowires was performed, and contact to a single wire was attempted using an electrochemical technique. We succeeded in addressing a small number of nanowires and measured a CPP-GMR of 17%. Template electrodeposition thus provides a promising way to repeatably fabricate prototypes for spin dependent transport studies.

  4. Review of Zinc Oxide Thin Films

    Science.gov (United States)

    2014-12-23

    Chemical Properties ZnO occurs  as white powder  known  as  zinc white or  as  the mineral  zincite.  Zinc  oxide   is  an  amphoteric   oxide .  It  is...AFRL-OSR-VA-TR-2015-0044 Review of Zinc Oxide Thin Films Tom Otiti COLLEGE OF COMPUTING AND INFORMATION SCIENCE MAKERERE U Final Report 12/23/2014...COVERED (From - To)      01-07-2011 to 30-06-2014 4.  TITLE AND SUBTITLE ZINC OXIDE MATERIALS FOR PHOTOVOLTAIC APPLICATIONS 5a.  CONTRACT NUMBER 5b

  5. Transparent Oxide Thin-Film Transistors: Production, Characterization and Integration

    Science.gov (United States)

    Barquinha, Pedro Miguel Candido

    This dissertation is devoted to the study of the emerging area of transparent electronics, summarizing research work regarding the development of n-type thin-film transistors (TFTs) based on sputtered oxide semiconductors. All the materials are produced without intentional substrate heating, with annealing temperatures of only 150-200 °C being used to optimize transistor performance. The work is based on the study and optimization of active semiconductors from the gallium-indium-zinc oxide system, including both the binary compounds Ga2O3, In2O3 and ZnO, as well as ternary and quaternary oxides based on mixtures of those, such as IZO and GIZO with different atomic ratios. Several topics are explored, including the study and optimization of the oxide semiconductor thin films, their application as channel layers on TFTs and finally the implementation of the optimized processes to fabricate active matrix backplanes to be integrated in liquid crystal display (LCD) prototypes. Sputtered amorphous dielectrics with high dielectric constant (high-kappa) based on mixtures of tantalum-silicon or tantalum-aluminum oxides are also studied and used as the dielectric layers on fully transparent TFTs. These devices also include transparent and highly conducting IZO thin films as source, drain and gate electrodes. Given the flexibility of the sputtering technique, oxide semiconductors are analyzed regarding several deposition parameters, such as oxygen partial pressure and deposition pressure, as well as target composition. One of the most interesting features of multicomponent oxides such as IZO and GIZO is that, due to their unique electronic configuration and carrier transport mechanism, they allow to obtain amorphous structures with remarkable electrical properties, such as high hall-effect mobility that exceeds 60 cm2 V -1 s-1 for IZO. These properties can be easily tuned by changing the processing conditions and the atomic ratios of the multicomponent oxides, allowing to

  6. Metallic oxide switches using thick film technology

    Science.gov (United States)

    Patel, D. N.; Williams, L., Jr.

    1974-01-01

    Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

  7. Oxide films on magnesium and magnesium alloys

    International Nuclear Information System (INIS)

    Shih, T.-S.; Liu, J.-B.; Wei, P.-S.

    2007-01-01

    Magnesium alloys are very active and readily ignite during heating and melting. In this study, we discuss the combustion of magnesium and magnesium alloys and propose prospective anti-ignition mechanisms for magnesium alloys during the heating process. When magnesium and magnesium alloys were heated in air, the sample surfaces produced layers of thermally formed oxides. These thermally formed oxides played an important role in affecting the combustion of the magnesium and magnesium alloys. When magnesium was heated in air, brucite that formed in the early stage was then transformed into periclase by dehydroxylation. By extending the heating time, more periclase formed and increased in thickness which was associated with microcracks formation. When magnesium was heated in a protective atmosphere (SF 6 ), a film of MgF 2 formed at the interface between the oxide layer and the Mg substrate. This film generated an anti-ignition behavior which protected the substrate from oxidation. When solution-treated AZ80 alloy was heated, spinel developed at the interface between the thermally formed oxide layer and the Mg substrate, improving the anti-ignition properties of the substrate. In addition, we also explain the effects of beryllium in an AZB91 alloy on the ignition-proofing behavior

  8. Chemically abrupt interface between Ce oxide and Fe films

    International Nuclear Information System (INIS)

    Lee, H.G.; Lee, D.; Kim, S.; Kim, S.G.; Hwang, Chanyong

    2005-01-01

    A chemically abrupt Fe/Ce oxide interface can be formed by initial oxidation of an Fe film followed by deposition of Ce metal. Once a Ce oxide layer is formed on top of Fe, it acts a passivation barrier for oxygen diffusion. Further deposition of Ce metal followed by its oxidation preserve the abrupt interface between Ce oxide and Fe films. The Fe and Ce oxidation states have been monitored at each stage using X-ray photoelectron spectroscopy

  9. Characterization of Micro-arc Oxidation Coatings on 6N01 Aluminum Alloy Under Different Electrolyte Temperature Control Modes

    Science.gov (United States)

    Wang, Xuefei; Zhu, Zongtao; Li, Yuanxing; Chen, Hui

    2018-03-01

    The micro-arc oxidation coatings of 6N01 aluminum alloy produced under different control modes of the electrolyte temperature are discussed in detail. Compared to those coated by a thermostatically controlled treatment, the coatings had different surface characterizations when they were coated without controlling the electrolyte temperature, particularly after treatment involving boiling electrolytes. Scanning electron microscopy and confocal laser scanning microscopy were used to observe the morphology of the coatings. Energy-dispersive spectrometry and x-ray diffractometer were used to characterize their elemental and crystalline phase compositions. The results indicate that the treatment without a controlled electrolyte temperature ultimately led to a thicker and rougher film with a respectably thick inner barrier film, a lower content of γ-Al2O3 and better corrosion resistance.

  10. Combined optical gain and degradation measurements in DCM2 doped Tris-(8-hydroxyquinoline)aluminum thin-films

    Science.gov (United States)

    Čehovski, Marko; Döring, Sebastian; Rabe, Torsten; Caspary, Reinhard; Kowalsky, Wolfgang

    2016-04-01

    Organic laser sources offer the opportunity to integrate flexible and widely tunable lasers in polymer waveguide circuits, e.g. for Lab-on-Foil applications. Therefore, it is necessary to understand gain and degradation processes for long-term operation. In this paper we address the challenge of life-time (degradation) measurements of photoluminescence (PL) and optical gain in thin-film lasers. The well known guest-host system of aluminum-chelate Alq3 (Tris-(8-hydroxyquinoline)aluminum) as host material and the laser dye DCM2 (4-(Dicyanomethylene)-2- methyl-6-julolidyl-9-enyl-4H-pyran) as guest material is employed as laser active material. Sample layers have been built up by co-evaporation in an ultrahigh (UHV) vacuum chamber. 200nm thick films of Alq3:DCM2 with different doping concentrations have been processed onto glass and thermally oxidized silicon substrates. The gain measurements have been performed by the variable stripe length (VSL) method. This measurement technique allows to determine the thin-film waveguide gain and loss, respectively. For the measurements the samples were excited with UV irradiation (ƛ = 355nm) under nitrogen atmosphere by a passively Q-switched laser source. PL degradation measurements with regard to the optical gain have been done at laser threshold (approximately 3 μJ/cm2), five times above laser threshold and 10 times above laser threshold. A t50-PL lifetime of > 107 pulses could be measured at a maximum excitation energy density of 32 μJ/cm2. This allows for a detailed analysis of the gain degradation mechanism and therefore of the stimulated cross section. Depending on the DCM2 doping concentration C the stimulated cross section was reduced by 35 %. Nevertheless, the results emphasizes the necessity of the investigation of degradation processes in organic laser sources for long-term applications.

  11. The effects of beam energy and substrate temperature on the tribological properties of hard-carbon films on aluminum

    International Nuclear Information System (INIS)

    Wei, R.; Wilbur, P.J.; Erdemir, A.; Kustas, F.M.

    1992-01-01

    Hard-carbon films were applied on flat 6061-T6 aluminum substrates using a broad-beam ion source operating on methane and producing carbonaceous ions with energies that varied from 250 to 1050 eV. Films were evaluated using a reciprocating alumina ball-on-flat sliding wear tester operating in an ambient air test environment. The films facilitated substantial reductions in friction coefficients to 0.08-0.2 from 0.4-0.7 for uncoated aluminum. At a sufficiently high normal load, the films failed and friction coefficients increased to the higher range. The best film caused this critical normal load to increase from less than 0.1 N for untreated aluminum to greater than 30 N. A near-optimal beam ion energy (450 eV) was identified for good quality films. At lower energies (e.g. 250 eV) films were discontinuous, while at higher energies (e.g. 1050 eV) high sputter rates limited film growth. When an aluminum flat was held at low temperature during processing, the films were smooth and adhered well, but they became rougher and adhered poorly as the temperature was increased above approximately 300degC. (orig.)

  12. Preparation of Phosphonic Acid Functionalized Graphene Oxide-modified Aluminum Powder with Enhanced Anticorrosive Properties

    Science.gov (United States)

    He, Lihua; Zhao, Yan; Xing, Liying; Liu, Pinggui; Wang, Zhiyong; Zhang, Youwei; Liu, Xiaofang

    2017-07-01

    To improve the anticorrosive performance of aluminum powder, a common functional filler in polymer coatings, we report a novel method to prepare graphene oxide modified aluminum powder (GO-Al) using 3-aminoproplyphosphoic acid as "link" agent. The GO nanosheets were firstly functionalized with 3-aminoproplyphosphoic acid (APSA) by the reaction of amine groups of APSA and the epoxy groups of GO. Subsequently, a layer of GO nanosheets uniformly and tightly covered the surface of flaky aluminum particle though the strong linking strength between -PO(OH)2 functional groups of the modified GO and aluminum. The hydrogen evolution experiment suggests that the GO attached on the aluminum powder could effectively improve the anticorrosive performance of the pigments.

  13. Synthesis and characterization of thermally oxidized ZnO films

    Indian Academy of Sciences (India)

    Administrator

    Abstract. Metallic zinc thin films were deposited onto glass substrates using vacuum thermal evaporation method. By thermal oxidation of as-deposited Zn films, in ambient conditions, at different temperatures (570,. 670 and 770 K, respectively, for 1 h) zinc oxide thin films were obtained. The structural characteristics of the.

  14. Novel chitosan-magnesium aluminum silicate nanocomposite film coatings for modified-release tablets.

    Science.gov (United States)

    Khunawattanakul, Wanwisa; Puttipipatkhachorn, Satit; Rades, Thomas; Pongjanyakul, Thaned

    2011-04-04

    Chitosan (CS), a positively charged polysaccharide, and magnesium aluminum silicate (MAS), a negatively charged clay with silicate layers, can electrostatically interact to form nanocomposite films. In this study, CS-MAS nanocomposite films were evaluated for use in tablet film coating. Effects of CS-MAS ratio and coating level on water uptake and drug release from the coated tablets were investigated. Surface and film matrix morphology of the coated film and the effect of enzymes in the simulated gastro-intestinal fluid on drug release were also examined. The results demonstrated that the CS-MAS coated tablets had a rough surface and a layered matrix film, whereas a smooth surface and dense matrix film on the CS coated tablets was found. However, the CS-MAS coated tablets provided fewer film defects than the CS coated tablets. Nanocomposite formation between CS and MAS could retard swelling and erosion of CS in the composite films in acidic medium. The higher MAS ratio of the CS-MAS coated tablets gave lower water uptake and slower drug release when compared with the CS coated tablets. Moreover, the CS-MAS films on the tablets presented good stability towards enzymatic degradation in simulated intestinal fluid. The release of drug from the CS-MAS coated tablets could be modulated by varying CS-MAS ratios and coating levels. Additionally, drug solubility also influenced drug release characteristics of the CS-MAS coated tablets. These findings suggest that the CS-MAS nanocomposites displays a strong potential for use in tablet film coating intended for modifying drug release from tablets. Copyright © 2011 Elsevier B.V. All rights reserved.

  15. Effect of nanostructured AlN coatings on the oxidation-resistant properties of optical diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, H. [Physics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)]. E-mail: zhangh@ornl.gov; Liu, J.M. [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Lu, F.X. [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China)

    2007-01-30

    Diamond film is an ultra-durable optical material with high thermal conductivity and good transmission in near-infrared and far-IR (8-14 {mu}m) wavebands. CVD diamond is subjected to oxidation at temperature higher than 780 deg. C bared in air for 3 min, while it can be protected from oxidation for extended exposure in air at temperature up to 900 deg. C by a coating of aluminum nitride. Highly oriented AlN coatings were prepared for infrared windows on diamond films by reactive sputtering method and the average surface roughness (R {sub a}) of the coatings was about 10 nm. The deposited films were characterized by X-ray diffraction (XRD) and atom force microscope (AFM). XRD confirmed the preferential orientation nature and AFM showed nanostructures. Optical properties of diamond films coated AlN thin film was investigated using infrared spectrum (IR) compared with that for as-grown diamond films.

  16. Transparent conductive oxides for thin-film silicon solar cells

    Science.gov (United States)

    Löffler, J.

    2005-04-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses, the front TCO plays an important role for the light enhancement of thin-film silicon pin type solar cells. If the TCO is rough, light scattering at rough interfaces in the solar cell in combination with a highly reflective back contact leads to an increase in optical path length of the light. Multiple (total) internal reflectance leads to virtual 'trapping' of the light in the solar cell structure, allowing a further decrease in absorber thickness and thus thin-film silicon solar cell devices with higher and more stable efficiency. Here, the optical mechanisms involved in the light trapping in thin-film silicon solar cells have been studied, and two types of front TCO materials have been investigated with respect to their suitability as front TCO in thin-film silicon pin type solar cells. Undoped and aluminum doped zinc oxide layers have been fabricated for the first time by the expanding thermal plasma chemical vapour deposition (ETP CVD) technique at substrate temperatures between 150 º C and 350 º C, and successfully implemented as a front electrode material for amorphous silicon pin superstrate type solar cells. Solar cells with efficiencies comparable to cells on Asahi U-type reference TCO have been reproducibly obtained. A higher haze is needed for the ZnO samples studied here than for Asahi U-type TCO in order to achieve comparable long wavelength response of the solar cells. This is attributed to the different angular distribution of the scattered light, showing higher scattering intensities at large angles for the Asahi U-type TCO. A barrier at the TCO/p interface and minor collection problems may explain the slightly lower fill factors obtained for the cells

  17. Polarization properties of real aluminum mirrors; I. Influence of the aluminum oxide layer

    NARCIS (Netherlands)

    van Harten, G.; Snik, F.; Keller, C.U.

    2009-01-01

    In polarimetry, it is important to characterize the polarization properties of the instrument itself to disentangle real astrophysical signals from instrumental effects. This article deals with the accurate measurement and modeling of the polarization properties of real aluminum mirrors, as used in

  18. Sound Absorption Characteristics of Aluminum Foams Treated by Plasma Electrolytic Oxidation

    OpenAIRE

    Jin, Wei; Liu, Jiaan; Wang, Zhili; Wang, Yonghua; Cao, Zheng; Liu, Yaohui; Zhu, Xianyong

    2015-01-01

    Open-celled aluminum foams with different pore sizes were fabricated. A plasma electrolytic oxidation (PEO) treatment was applied on the aluminum foams to create a layer of ceramic coating. The sound absorption coefficients of the foams were measured by an impedance tube and they were calculated by a transfer function method. The experimental results show that the sound absorption coefficient of the foam increases gradually with the decrease of pore size. Additionally, when the porosity of th...

  19. Epitaxial oxide thin films by pulsed laser deposition: Retrospect and ...

    Indian Academy of Sciences (India)

    Epitaxial thin films of high c cuprates, metallic, ferroelectric, ferromagnetic, dielectric oxides, super conduc tor-metal-superconductor Josephson junctions and oxide superlattices have been made by PLD. In this article, an overview of preparation, characterization and properties of epitaxial oxide films and their applications ...

  20. Fabrication of Si(111) crystalline thin film on graphene by aluminum-induced crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Høiaas, I. M. [Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway); Kim, D. C., E-mail: dc.kim@crayonano.com, E-mail: helge.weman@ntnu.no; Weman, H., E-mail: dc.kim@crayonano.com, E-mail: helge.weman@ntnu.no [Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway); CrayoNano AS, Otto Nielsens vei 12, NO-7052 Trondheim (Norway)

    2016-04-18

    We report the fabrication of a Si(111) crystalline thin film on graphene by the aluminum-induced crystallization (AIC) process. The AIC process of Si(111) on graphene is shown to be enhanced compared to that on an amorphous SiO{sub 2} substrate, resulting in a more homogeneous Si(111) thin film structure as revealed by X-ray diffraction and atomic force microscopy measurements. Raman measurements confirm that the graphene is intact throughout the process, retaining its characteristic phonon spectrum without any appearance of the D peak. A red-shift of Raman peaks, which is more pronounced for the 2D peak, is observed in graphene after the crystallization process. It is found to correlate with the red-shift of the Si Raman peak, suggesting an epitaxial relationship between graphene and the adsorbed AIC Si(111) film with both the graphene and Si under tensile strain.

  1. Two-dimensional analysis of spurious modes in aluminum nitride film resonators.

    Science.gov (United States)

    Gong, Xun; Han, Min; Shang, Xiaoli; Xiong, Jun; Duan, Jie; Sekimoto, Hitoshi

    2007-06-01

    In this paper, a hybrid method, which combines the traditional concept of guided waves and the finite element method (FEM), is proposed to analyze the spurious modes of aluminum nitride (AIN) film with electrodes. First, the guided wave modes in the plated area are obtained by 1-D FEM. Second, a mode-match method is used to satisfy the boundary conditions. The vibration of the film resonator is a superposition of all of the guided modes. With respect to an A1N film resonator, which is a thickness-stretch mode resonator, we have identified three families of spurious modes: extension, thickness-stretch, and thickness-shear. The spectrum of spurious modes is calculated and the influence of the spurious modes is discussed.

  2. Films deposited from reactive sputtering of aluminum acetylacetonate under low energy ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Battaglin, Felipe Augusto Darriba; Prado, Eduardo Silva; Cruz, Nilson Cristino da; Rangel, Elidiane Cipriano, E-mail: elidiane@sorocaba.unesp.br [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Sorocaba, SP (Brazil). Lab. de Plasmas Tecnologicos; Caseli, Luciano [Universidade Federal de Sao Paulo (UNIFESP), Diadema, SP (Brazil). Instituto de Ciencias Ambientais, Quimicas e Farmaceuticas; Silva, Tiago Fiorini da; Tabacniks, Manfredo Harri [Universidade de Sao Paulo (USP), SP (Brazil). Instituto de Fisica

    2017-07-15

    Films were deposited from aluminum acetylacetonate (Al(acac)3 ) using a methodology involving reactive sputtering and low energy ion bombardment. The plasma was generated by the application of radiofrequency power to the powder containing electrode and simultaneously, negative pulses were supplied to the electrode where the substrates were attached. It was investigated the effect of the duty cycle of the pulses (Δ) on the properties of the coatings. Association of ion bombardment to the deposition process increased film thickness, structure reticulation and organic content. Ions from the deposition environment were implanted at the film-air interface or underneath it. Morphology and topography were altered depending on Δ. Considering the enhancement of Δ, it affected the flux of ions reaching the depositing interface and then the deposition rate, H content, crosslinking degree and surface microstructure. Alumina groups were detected in the infrared spectra, whereas the precipitation of amorphous alumina was confirmed by X-ray diffraction. (author)

  3. Swift heavy ion irradiation-induced modifications of tris-(8-hydroxyquinoline)aluminum thin films

    Science.gov (United States)

    Thangaraju, K.; Kumaran, R.; Mohanty, T.; Asokan, K.; Ramamurthy, P.; Kanjilal, D.; Kumar, J.

    Tris-(8-hydroxyquinoline)aluminum (Alq3), one of the most widely used light emitting and electron transport materials in organic luminescent devices, has been synthesized. Alq3 thin films have been deposited by a thermal evaporation process on glass substrates. The effect of swift heavy ion (SHI) irradiation using 40 MeV Li3+ on the Alq3 thin films has been studied by UV-visible, infrared, photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectroscopy. From TRPL studies, it is found that the PL of Alq3 thin films arises 6rom two species corresponding to its two geometrical isomers, namely facial and meridional having two different life times. It is also confirmed that the PL and lifetimes of excitons decrease with the increase of ion fluences of SHI of 40 MeV Li3+, indicating a transfer of exciton energy to unstable cationic Alq3 species generated by SHI irradiation.

  4. Piezoresistive polysilicon film obtained by low-temperature aluminum-induced crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Patil, Suraj Kumar [Materials Science and Engineering Department, University of Texas at Arlington, P.O. Box 19031, Arlington, TX-76019 (United States); Nanotechnology Research and Teaching Facility, University of Texas at Arlington, 500 S. Cooper Street, Arlington, TX-76019 (United States); Celik-Butler, Zeynep, E-mail: zbutler@uta.ed [Nanotechnology Research and Teaching Facility, University of Texas at Arlington, 500 S. Cooper Street, Arlington, TX-76019 (United States); Electrical Engineering Department, University of Texas at Arlington, P.O. Box 19072, Arlington, TX-76019 (United States); Butler, Donald P. [Nanotechnology Research and Teaching Facility, University of Texas at Arlington, 500 S. Cooper Street, Arlington, TX-76019 (United States); Electrical Engineering Department, University of Texas at Arlington, P.O. Box 19072, Arlington, TX-76019 (United States)

    2010-10-29

    A low-temperature deposition process employing aluminum-induced crystallization has been developed for fabrication of piezoresistive polycrystalline silicon (polysilicon) films on low cost and flexible polyimide substrates for force and pressure sensing applications. To test the piezoresistive properties of the polysilicon films, prototype pressure sensors were fabricated on surface-micromachined silicon nitride (Si{sub 3}N{sub 4}) diaphragms, in a half-Wheatstone bridge configuration. Characterization of the pressure sensor was performed using atomic force microscope in contact mode with a specially modified probe-tip. Low pressure values ranging from 5 kPa to 45 kPa were achieved by this method. The resistance change was found to be - 0.1% to 0.5% and 0.07% to 0.3% for polysilicon films obtained at 500 {sup o}C and 400 {sup o}C, respectively, for the applied pressure range.

  5. Liquid Film Migration in Warm Formed Aluminum Brazing Sheet

    Science.gov (United States)

    Benoit, M. J.; Whitney, M. A.; Wells, M. A.; Jin, H.; Winkler, S.

    2017-10-01

    Warm forming has previously proven to be a promising manufacturing route to improve formability of Al brazing sheets used in automotive heat exchanger production; however, the impact of warm forming on subsequent brazing has not previously been studied. In particular, the interaction between liquid clad and solid core alloys during brazing through the process of liquid film migration (LFM) requires further understanding. Al brazing sheet comprised of an AA3003 core and AA4045 clad alloy, supplied in O and H24 tempers, was stretched between 0 and 12 pct strain, at room temperature and 523K (250 °C), to simulate warm forming. Brazeability was predicted through thermal and microstructure analysis. The rate of solid-liquid interactions was quantified using thermal analysis, while microstructure analysis was used to investigate the opposing processes of LFM and core alloy recrystallization during brazing. In general, liquid clad was consumed relatively rapidly and LFM occurred in forming conditions where the core alloy did not recrystallize during brazing. The results showed that warm forming could potentially impair brazeability of O temper sheet by extending the regime over which LFM occurs during brazing. No change in microstructure or thermal data was found for H24 sheet when the forming temperature was increased, and thus warm forming was not predicted to adversely affect the brazing performance of H24 sheet.

  6. Formation of zinc oxide film by boiling metallic zinc film in ultrapure water

    Energy Technology Data Exchange (ETDEWEB)

    Qiu Zhiyong; Nadamura, Yuichiro [Department of Materials Science and Technology, Faculty of Industrial Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, 278-8510 Chiba (Japan); Ishiguro, Takashi, E-mail: ishiguro@rs.noda.tus.ac.j [Department of Materials Science and Technology, Faculty of Industrial Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, 278-8510 Chiba (Japan)

    2010-08-31

    A simple method for forming zinc oxide (ZnO) films has been discovered. Radio-frequency (rf) sputtered metallic zinc (Zn) film is boiled in ultrapure water at 368 K. The opaque Zn film changes into a transparent film. It is confirmed by transmission electron microscopy and X-ray diffraction that the transparent film is hexagonal ZnO. Optical and morphological properties of the ZnO film are discussed.

  7. Nitric oxide reduces aluminum toxicity by preventing oxidative stress in the roots of Cassia tora L.

    Science.gov (United States)

    Wang, You-Sheng; Yang, Zhi-Min

    2005-12-01

    Nitric oxide (NO) as a key signaling molecule has been involved in mediation of various biotic and abiotic stress-induced physiological responses in plants. In the present study, we investigated the effect of NO on Cassia tora L. plants exposed to aluminum (Al). Plants pre-treated for 12 h with 0.4 mM sodium nitroprusside (SNP), an NO donor, and subsequently exposed to 10 microM Al treatment for 24 h exhibited significantly greater root elongation as compared with the plants without SNP treatment. The NO-promoted root elongation was correlated with a decrease in Al accumulation in root apexes. Furthermore, oxidative stress associated with Al treatment increased lipid peroxidation and reactive oxygen species, and the activation of lipoxygenase and antioxidant enzymes was reduced by NO. Such effects were confirmed by the histochemical staining for the detection of peroxidation of lipids and loss of membrane integrity in roots. The ameliorating effect of NO was specific, because the NO scavenger cPTIO [2-(4-carboxy-2-phenyl)-4,4,5,5-tetramethylinidazoline-1-oxyl-3-oxide] completely reversed the effect of NO on root growth in the presence of Al. These results indicate that NO plays an important role in protecting the plant against Al-induced oxidative stress.

  8. Characterization of ultrasonic spray pyrolysed ruthenium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, P.S.; Ennaoui, E.A.; Lokhande, C.D.; Mueller, M.; Giersig, M.; Diesner, K.; Tributsch, H. [Hahn-Meitner-Institut Berlin GmbH (Germany). Bereich Physikalische Chemie

    1997-11-21

    The ultrasonic spray pyrolysis (USP) technique was employed to deposit ruthenium oxide thin films. The films were prepared at 190 C substrate temperature and further annealed at 350 C for 30 min in air. The films were 0.22 {mu} thick and black grey in color. The structural, compositional and optical properties of ruthenium oxide thin films are reported. Contactless transient photoconductivity measurement was carried out to calculate the decay time of excess charge carriers in ruthenium oxide thin films. (orig.) 28 refs.

  9. Epitaxial two dimensional aluminum films on silicon (111) by ultra-fast thermal deposition

    Science.gov (United States)

    Levine, Igal; Yoffe, Alexander; Salomon, Adi; Li, Wenjie; Feldman, Yishay; Vilan, Ayelet

    2012-06-01

    Aluminum thin films are known for their extremely rough surface, which is detrimental for applications such as molecular electronics and photonics, where protrusions cause electrical shorts or strong scattering. We achieved atomically flat Al films using a highly non-equilibrium approach. Ultra-fast thermal deposition (UFTD), at rates >10 nm/s, yields RMS roughness of 0.4 to 0.8 nm for 30-50 nm thick Al films on variety of substrates. For UFTD on Si(111) substrates, the top surface follows closely the substrate topography (etch pits), indicating a 2D, layer-by-layer growth. The Al film is a mixture of (100) and (111) grains, where the latter are commensurate with the in-plane orientation of the underlying Si (epitaxy). We show the use of these ultra-smooth Al films for highly reproducible charge-transport measurements across a monolayer of alkyl phosphonic acid as well as for plasmonics applications by directly patterning them by focused ion beam to form a long-range ordered array of holes. UFTD is a one-step process, with no need for annealing, peeling, or primer layers. It is conceptually opposite to high quality deposition methods, such as MBE or ALD, which are slow and near-equilibrium processes. For Al, though, we find that limited diffusion length (and good wetting) is critical for achieving ultra-smooth thin films.

  10. Liquid crystal alignment in nanoporous anodic aluminum oxide layer for LCD panel applications.

    Science.gov (United States)

    Hong, Chitsung; Tang, Tsung-Ta; Hung, Chi-Yu; Pan, Ru-Pin; Fang, Weileun

    2010-07-16

    This paper reports the implementation and integration of a self-assembled nanoporous anodic aluminum oxide (np-AAO) film and liquid crystal (LC) on an ITO-glass substrate for liquid crystal display (LCD) panel applications. An np-AAO layer with a nanopore array acts as the vertical alignment layer to easily and uniformly align the LC molecules. Moreover, the np-AAO nanoalignment layer provides outstanding material properties, such as being inorganic with good transmittance, and colorless on ITO-glass substrates. In this application, an LCD panel, with the LC on the np-AAO nanoalignment layer, is successfully implemented on an ITO-glass substrate, and its performance is demonstrated. The measurements show that the LCD panel, consisting of an ITO-glass substrate and an np-AAO layer, has a transmittance of 60-80%. In addition, the LCD panel switches from a black state to a bright state at 3 V(rms), with a response time of 62.5 ms. In summary, this paper demonstrates the alignment of LC on an np-AAO layer for LCD applications.

  11. Prediction model for oxide thickness on aluminum alloy cladding during irradiation

    International Nuclear Information System (INIS)

    Kim, Yeon Soo; Hofman, G.L.; Hanan, N.A.; Snelgrove, J.L.

    2003-01-01

    An empirical model predicting the oxide film thickness on aluminum alloy cladding during irradiation has been developed as a function of irradiation time, temperature, heat flux, pH, and coolant flow rate. The existing models in the literature are neither consistent among themselves nor fit the measured data very well. They also lack versatility for various reactor situations such as a pH other than 5, high coolant flow rates, and fuel life longer than ∼1200 hrs. Particularly, they were not intended for use in irradiation situations. The newly developed model is applicable to these in-reactor situations as well as ex-reactor tests, and has a more accurate prediction capability. The new model demonstrated with consistent predictions to the measured data of UMUS and SIMONE fuel tests performed in the HFR, Petten, tests results from the ORR, and IRIS tests from the OSIRIS and to the data from the out-of-pile tests available in the literature as well. (author)

  12. Metallic Thin-Film Bonding and Alloy Generation

    Science.gov (United States)

    Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Peotter, Brian S. (Inventor); Droppers, Lloyd (Inventor)

    2016-01-01

    Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

  13. Adhesion of oxide layer to metal-doped aluminum hydride surface: Density functional calculations

    Science.gov (United States)

    Takezawa, Tomoki; Itoi, Junichi; Kannan, Takashi

    2017-07-01

    The density functional theory (DFT) calculations were carried out to evaluate the adhesion energy of the oxide layer to the metal-doped surface of hydrogen storage material, aluminum hydride (alane, AlH3). The total energy calculations using slab model revealed that the surface doping of some metals to aluminum hydride weakens the adhesion strength of the oxide layer. The influence of titanium, iron, cobalt, and zirconium doping on adhesion strength were evaluated. Except for iron doping, the adhesion strength becomes weak by the doping.

  14. Characterization of injected aluminum oxide nanoparticle clouds in an rf discharge

    Science.gov (United States)

    Krüger, Harald; Killer, Carsten; Schütt, Stefan; Melzer, André

    2018-02-01

    An experimental setup to deagglomerate and insert nanoparticles into a radio frequency discharge has been developed to confine defined aluminum oxide nanoparticles in a dusty plasma. For the confined particle clouds we have measured the spatially resolved in situ size and density distributions. Implementing the whole plasma chamber into the sample volume of an FTIR spectrometer the infrared spectrum of the confined aluminum oxide nanoparticles has been obtained. We have investigated the dependency of the absorbance of the nanoparticles in terms of plasma power, pressure and cloud shape. The particles’ infrared phonon resonance has been identified.

  15. Electrochromism of the electroless deposited cuprous oxide films

    International Nuclear Information System (INIS)

    Neskovska, R.; Ristova, M.; Velevska, J.; Ristov, M.

    2007-01-01

    Thin cuprous oxide films were prepared by a low cost, chemical deposition (electroless) method onto glass substrates pre-coated with fluorine doped tin oxide. The X-ray diffraction pattern confirmed the Cu 2 O composition of the films. Visible transmittance spectra of the cuprous oxide films were studied for the as-prepared, colored and bleached films. The cyclic voltammetry study showed that those films exhibited cathode coloring electrochromism, i.e. the films showed change of color from yellowish to black upon application of an electric field. The transmittance across the films for laser light of 670 nm was found to change due to the voltage change for about 50%. The coloration memory of those films was also studied during 6 h, ex-situ. The coloration efficiency at 670 nm was calculated to be 37 cm 2 /C

  16. UV photodissociation spectroscopy of oxidized undecylenic acid films.

    Science.gov (United States)

    Gomez, Anthony L; Park, Jiho; Walser, Maggie L; Lin, Ao; Nizkorodov, Sergey A

    2006-03-16

    Oxidation of thin multilayered films of undecylenic (10-undecenoic) acid by gaseous ozone was investigated using a combination of spectroscopic and mass spectrometric techniques. The UV absorption spectrum of the oxidized undecylenic acid film is significantly red-shifted compared to that of the initial film. Photolysis of the oxidized film in the tropospheric actinic region (lambda > 295 nm) readily produces formaldehyde and formic acid as gas-phase products. Photodissociation action spectra of the oxidized film suggest that organic peroxides are responsible for the observed photochemical activity. The presence of peroxides is confirmed by mass-spectrometric analysis of the oxidized sample and an iodometric test. Significant polymerization resulting from secondary reactions of Criegee radicals during ozonolysis of the film is observed. The data strongly imply the importance of photochemistry in aging of atmospheric organic aerosol particles.

  17. In-situ monitoring of the growth of nanostructured aluminum thin film

    Czech Academy of Sciences Publication Activity Database

    Novotný, Michal; Bulíř, Jiří; Lančok, Ján; Pokorný, Petr; Bodnár, Michal

    2011-01-01

    Roč. 5, č. 5 (2011), "051503-1"-"051503-10" ISSN 1934-2608 R&D Projects: GA AV ČR IAA100100718; GA AV ČR IAA100100729; GA ČR GP202/09/P324 Institutional research plan: CEZ:AV0Z10100522 Keywords : aluminum ultrathin film * magnetron sputtering * in-situ monitoring * electrical conductivity * spectral ellipsometry * optical emission spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.570, year: 2011

  18. Electric field effect on luminescence efficiency in 8-hydroxyquinoline aluminum (Alq3) thin films

    Science.gov (United States)

    Stampor, W.; Kalinowski, J.; Di Marco, P.; Fattori, V.

    1997-04-01

    Electric field-induced luminescence quenching in thin films made from common organic electroluminescent material of aluminum (III) 8-hydroxyquinoline (Alq3) is reported. The dependence of luminescence quenching on excitation wavelength and electric field is attributed to field-assisted hopping separation of charge in localized excited states. The effect extrapolated to high electric fields can reduce the luminescence yield by as much as 60% limiting electroluminescence quantum efficiency in high-field-driven light emitting diodes based on the Alq3 emitter.

  19. Aluminum Oxide Nanoparticles for Highly Efficient Asphaltene Separation from Crude Oil Using Ceramic Membrane Technology

    Directory of Open Access Journals (Sweden)

    Rezakazemi Mashallah

    2017-11-01

    Full Text Available The effects of aluminum oxide nanoparticles on the removal of asphaltenes from an Iranian crude oil (Soroush using a ceramic membrane with pore size of 0.2 µm were investigated. In order to achieve superior asphaltene separation by ultrafiltration, it is essential to make some changes for destabilizing asphaltene in crude oil. The asphaltene destabilization was done using crude oil contact with an acid containing dissolved metal ions. Metal oxide nanoparticles adsorbed asphaltene molecules and increased their molecular size. The nanoparticle of aluminum oxide was applied to alter precipitation and peptization properties of asphaltenes. Dynamic Light Scattering (DLS was used to measurement of the asphaltene molecular size dissolved in toluene. Raman spectroscopy and the Tuinstra equation were used to determine the aromatic sheet diameter (La via the integrated intensities of the G and D1 modes. This revealed that the asphaltene particles react with nano aluminum oxide and the average molecular size of asphaltene was raised from 512.754 to 2949.557 nm and La from 5.482 to 13.787. The obtained results showed that using nano aluminum oxides, asphaltene separation increased from 60–85 wt% to 90–97 wt% based on the asphaltene content of crude oil.

  20. Correlation between texture and mechanical stress durability of thin aluminum films

    Energy Technology Data Exchange (ETDEWEB)

    Nüssl, R., E-mail: rudolf.nuessl@uct.ac.za [Institut für Physik, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85579 Neubiberg (Germany); Jewula, T.; Ruile, W. [TDK Corporation, Systems, Acoustics, Waves Business Group, Anzingerstraße 13, 81617 Munich (Germany); Sulima, T.; Hansch, W. [Institut für Physik, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85579 Neubiberg (Germany)

    2014-04-01

    In this article, differently textured aluminum (Al) metallizations of surface acoustic wave (SAW) devices have been exposed to cyclic mechanical stress in order to investigate a potential correlation between their texture and their mechanical stress durability. Samples of SAW devices with differently textured Al thin film electrodes have been manufactured, and texture measurements have been carried out on all samples with electron backscatter diffraction. Subsequently, the SAW devices have been operated at heavy electrical load until a defined mechanical fatigue of its Al electrodes occurred. SAW devices with highly textured Al electrodes showed almost 20 times higher power durability than SAW devices with untextured Al electrodes. We show that this increase in electrical power durability has to be fully attributed to the strongly enhanced mechanical stress durability of highly textured Al films. Furthermore, a positive correlation between the Al films' texture and its electrical conductivity has been found. - Highlights: • We show highly textured growth of thin Al films on a clean, monocrystalline LiTaO{sub 3} • Highly textured Al growth gets disturbed by prior photolithographic process steps • Power durability of a SAW device increases with texture of its metallization • Texture and mechanical stress durability of a thin Al film are tightly correlated.

  1. Studies on influence of light on fluorescence of Tris-(8-hydroxyquinoline)aluminum thin films

    Science.gov (United States)

    Thangaraju, K.; Amaladass, P.; Bharathi, K. Shanmuga; Mohanakrishnan, A. K.; Narayanan, V.; Kumar, J.

    2009-03-01

    Tris-(8-hydroxyquinoline)aluminum (Alq 3) thin films, the most widely used electron transport/emissive material in the organic electroluminescent (EL) devices, have been deposited on glass substrates by thermal evaporation process. Alq 3 thin films were exposed to light for various time periods under normal ambient. The fluorescence of as-prepared and light exposed Alq 3 thin films and formation of luminescent quencher have been studied using fluorescence, Mass, MALDI-ToF-MS, 1H & 13C NMR, and FT-IR spectroscopy. It is observed that among the three 8-hydroxyquinoline (HQ) units in Alq 3 molecule, one HQ unit is affected during the light exposure in the normal ambient. It is found that the affected resultant Alq 3 molecule containing the carbonyl group acts as fluorescent quencher and the energy of excitons in the Alq 3 molecule in the light exposed Alq 3 thin films can be non-radiatively transferred to the neighboring fluorescent quencher, quenching the fluorescence of light exposed Alq 3 thin films in the normal ambient.

  2. Physical and electrical degradation of ZrO{sub 2} thin films with aluminum electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Nam, Seok-Woo; Yoo, Jung-Ho; Nam, Suheun; Ko, Dae-Hong; Ku, Ja-Hum; Yang, Cheol-Woong

    2003-09-15

    Zirconium oxide thin films were deposited on p-type (1 0 0) silicon wafers by reactive d.c. magnetron sputtering. The as-deposited ZrO{sub 2} films at the power of 300 W and at room temperature were amorphous and the ZrO{sub 2} films became polycrystalline with both the monoclinic and tetragonal phases after post-annealing at 450 deg. C in N{sub 2} ambient. The ZrO{sub 2} films with Al electrode had the interfacial amorphous Al-O-containing layer, which was formed by their interaction, but the films with inactive electrodes such as Pt had no additional interfacial layer. The value of the capacitance equivalent thickness (CET) for ZrO{sub 2} film with Al electrode was increased to about 12.4 A compared with the film with Pt electrode due to the additional interfacial layer between Al and ZrO{sub 2} film. The difference of flat band voltage ({delta}V{sub FB}) between the films with two different electrodes was about 1.2 V because of their work function difference.

  3. Oriented growth of thin films of samarium oxide by MOCVD

    Indian Academy of Sciences (India)

    Unknown

    Infrared spectroscopic study reveals that films grown above 600°C are free of carbon. Keywords. MOCVD; thin films .... Simultaneous thermogravimetry and differential thermal analysis (TG/DTA) of the complex was carried ..... quality thin films of rare earth oxides by MOCVD, using the phenanthroline adducts of pentadionate ...

  4. Improved zinc oxide film for gas sensor applications

    Indian Academy of Sciences (India)

    Unknown

    to the other CVD techniques, simultaneously yielding reasonably good quality films for sensor applications. The deposited films were confirmed to be polycrystalline zinc oxide by XRD analysis. The change in electrical resistance of the films was measured while exposing those to the different concentrations of DMA vapour.

  5. Stoichiometry control in oxide thin films by pulsed laser deposition

    NARCIS (Netherlands)

    Groenen, R.

    2017-01-01

    A general challenge in the synthesis of complex oxide nanostructures and thin films is the control of the stoichiometry and herewith control of thin film properties. Pulsed Laser Deposition (PLD) is widely known for its potential for growing near stoichiometric highly crystalline complex metal oxide

  6. Optical characteristics of transparent samarium oxide thin films ...

    Indian Academy of Sciences (India)

    Transparent metal oxide thin films of samarium oxide (Sm 2 O 3 ) were prepared on pre-cleaned fused optically flat quartz substrates by radio-frequency (RF) sputtering technique. The as-deposited thin films were annealed at different temperatures (873, 973 and 1073 K) for 4 h in air under normal atmospheric pressure.

  7. Properties of advanced (reduced) graphene oxide-alginate biopolymer films

    NARCIS (Netherlands)

    Vilcinskas, K.

    2016-01-01

    In this work, properties of Calcium alginate-reduced graphene oxide and Barium alginate‐reduced graphene oxide composite films are explored. In addition, the properties of the divalent metal ion-cross-linked alginate composite films are compared to the analogous properties of uncross‐linked Sodium

  8. Formation of corrosion-resistant oxide film on uranium

    International Nuclear Information System (INIS)

    Petit, G.S.

    1976-01-01

    A vacuum heat-treatment method was developed for coating metallic uranium with an adherent protective film of uranium oxide. The film is prepared by vacuum heat-treating the metallic uranium at 625 0 C for 1 h while controlling the amount of oxygen being metered into the furnace. Uranium coupons with the protective film were exposed for several hundred hours in a corrosion test bath at 95 0 C and 100 percent RH without corroding. Film thicknesses ranging from 5 to 25 μm (0.0002 to 0.001 in.) were prepared and corrosion tested; the film thickness can be controlled to less than +-2.5 μm (+-0.0001 in.). The oxide film is hard, nonwetting, and very adherent. The resulting surface finish of the metal is equivalent to that of the original finish. The advantages of the oxide films over other protective coatings are given. 12 fig

  9. Standard specification for nuclear-grade aluminum oxide-boron carbide composite pellets

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2005-01-01

    1.1 This specification applies to pellets composed of mixtures of aluminum oxide and boron carbide that may be ultimately used in a reactor core, for example, in neutron absorber rods. 1.2 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.

  10. Monolayer-directed Assembly and Magnetic Properties of FePt Nanoparticles on Patterned Aluminum Oxide

    NARCIS (Netherlands)

    Yildirim, O.; Gang, T.; Kinge, S.S.; Reinhoudt, David; Blank, David H.A.; van der Wiel, Wilfred Gerard; Rijnders, Augustinus J.H.M.; Huskens, Jurriaan

    2010-01-01

    FePt nanoparticles (NPs) were assembled on aluminum oxide substrates, and their ferromagnetic properties were studied before and after thermal annealing. For the first time, phosph(on)ates were used as an adsorbate to form self-assembled monolayers (SAMs) on alumina to direct the assembly of NPs

  11. In-situ measurement of the electrical conductivity of aluminum oxide in HFIR

    Energy Technology Data Exchange (ETDEWEB)

    Zinkle, S.J.; White, D.P.; Snead, L.L. [Oak Ridge National Lab., TN (United States)] [and others

    1996-10-01

    A collaborative DOE/Monbusho irradiation experiment has been completed which measured the in-situ electrical resistivity of 12 different grades of aluminum oxide during HFIR neutron irradiation at 450{degrees}C. No evidence for bulk RIED was observed following irradiation to a maximum dose of 3 dpa with an applied dc electric field of 200 V/mm.

  12. Influence of a discrete additive of aluminum oxide on structure and properties of aluminum alloy

    Directory of Open Access Journals (Sweden)

    Ю. А. Курганова

    2017-12-01

    Full Text Available On the basis of the literature review, there were identified the problem and the relevance of the development of the technology for introducing additives of nano-sized fillers into aluminum alloys in order to determine the mechanism for controlling the structurally dependent properties. As such an additive, alumina fibers of 10-20 nm in diameter were selected. The introduction of the additive into the liquid alloy is implemented by means of mechanical mixing. Technological features of the process allowed to solve the problem of overcoming the forces of surface tension and distribution of additives, which are quantitatively small and light in comparison with the main material. Experimental samples were obtained under laboratory conditions using the specially designed equipment. To perform the comparative analysis, samples of the base alloy of the composition AK6 and filled with a discrete additive of 1 % alloy of the same composition were obtained in identical modes. Investigations of the structure and properties of the base alloy and samples obtained by mixing in the base alloy of thin discrete alumina fibers in a volume of 1 % were performed using standard metallographic analysis techniques and a hardness measurement method. As a result of macro- and microscopic studies, a modifying effect was found from the addition of finely dispersed Al2O3 to an aluminum alloy, which manifested as grain refinement. The shape of the hardness distribution curves obtained as a result of the processing of statistical data is identical for the compared samples and has a pronounced shifted extremum, which indicates changes in the properties on the one hand and demonstrates a sufficient level of assimilation of the additives by the liquid alloy, on the other. Consequently, the expediency of using the suggested method of modification for obtaining materials of this group is obvious.

  13. A beta-ray source preparation method by the use of backing film coated with aluminum

    International Nuclear Information System (INIS)

    Yoshida, Makoto; Miyahara, Hiroshi; Watanabe, Tamaki

    1975-01-01

    The preparation method for the source of 4πβ-counting which had less self-absorption and better uniformity was studied. The procedures for the preparation were as follows: The solution of radioactive nuclide was dropped upon the source backing film coated with aluminum and dried under an infrared lamp. Then the source material dried on the film was again dissolved by adding a small amount of distilled water and finally dried in an ammoniac atmosphere. By this method, the source material was uniformly distributed due to the presence of fine particles of aluminum compound which were produced in the solution of radioactive nuclide. The self-absorption for β-rays of the sources of 46 Sc, 60 Co, and 203 Hg was measured by means of a 4πβ-γ coincidence and their uniformity was observed autoradiographically and microphotographically. The self-absorption in this method was a little less than with the colloidal silica treatment or the precipitation method. (auth.)

  14. Investigation of thermal conductivity and oxidation behaviour of reaction bonded aluminum nitride (RBAN) ceramics

    International Nuclear Information System (INIS)

    Salahi, E; Moztarzadeh, F.; Margoosian, V.; Heinrich, J. G.

    2003-01-01

    AlN samples have been produced by reaction bonding process using AlN and aluminum powders as starting materials. Different aluminum nitride and aluminum powders ratios were mixed in ethanol media, dried, isostatically and nitrided in (N 2 )atmosphere. Results showed that conversion of to AlN depends strongly on the amount of aluminum starting powder and decreased with increasing after a maximum at 25 Al wt %. Changing the particle size and morphology of the aluminum starting powder leads to change in the conversion ratio and microstructure of RBAN ceramics. Typical scanning electron micrographs of RBAN sample indicating primary and secondary aluminum nitride morphology and pore structure. The oxidation behavior of RABN samples showed the weight gain depends on the average particle size, morphology and amount of Al in starting mixture and pore structure. Samples have been manufactured with equi-axed morphology of Al starting powder have thermal conductivity higher than the samples have been manufactured with flake-like morphology. These differences were directly related to the different microstructure of RBAN samples

  15. Low oxidation state aluminum-containing cluster anions: Cp(∗)AlnH(-), n = 1-3.

    Science.gov (United States)

    Zhang, Xinxing; Ganteför, Gerd; Eichhorn, Bryan; Mayo, Dennis; Sawyer, William H; Gill, Ann F; Kandalam, Anil K; Schnöckel, Hansgeorg; Bowen, Kit

    2016-08-21

    Three new, low oxidation state, aluminum-containing cluster anions, Cp*AlnH(-), n = 1-3, were prepared via reactions between aluminum hydride cluster anions, AlnHm (-), and Cp*H ligands. These were characterized by mass spectrometry, anion photoelectron spectroscopy, and density functional theory based calculations. Agreement between the experimentally and theoretically determined vertical detachment energies and adiabatic detachment energies validated the computed geometrical structures. Reactions between aluminum hydride cluster anions and ligands provide a new avenue for discovering low oxidation state, ligated aluminum clusters.

  16. Phonon transport in a curved aluminum thin film due to laser short pulse irradiation

    Science.gov (United States)

    Mansoor, Saad Bin; Yilbas, Bekir Sami

    2018-05-01

    Laser short-pulse heating of a curved aluminum thin film is investigated. The Boltzmann transport equation is incorporated to formulate the heating situation. A Gaussian laser intensity distribution is considered along the film arc and time exponentially decaying of pulse intensity is incorporated in the analysis. The governing equations of energy transport in the electron and lattice sub-systems are coupled through the electron-phonon coupling parameter. To quantify the phonon intensity distribution in the thin film, equivalent equilibrium temperature is introduced, which is associated with the average energy of all phonons around a local point when the phonon energies are redistributed adiabatically to an equilibrium state. It is found the numerical simulations that electron temperature follows similar trend to the spatial distribution of the laser pulse intensity at the film edge. Temporal variation of electron temperature does not follow the laser pulse intensity distribution. The rise of temperature in the electron sub-system is fast while it remains slow in the lattice sub-system.

  17. Thermal Stability of Copper-Aluminum Alloy Thin Films for Barrierless Copper Metallization on Silicon Substrate

    Science.gov (United States)

    Wang, C. P.; Dai, T.; Lu, Y.; Shi, Z.; Ruan, J. J.; Guo, Y. H.; Liu, X. J.

    2017-08-01

    Copper thin films with thickness of about 500 nm doped with different aluminum concentrations have been prepared by magnetron sputtering on Si substrate and their crystal structure, microstructure, and electrical resistivity after annealing at various temperatures (200°C to 600°C) for 1 h or at 400°C for different durations (1 h to 11 h) investigated by grazing-incidence x-ray diffraction (GIXRD) analysis, scanning electron microscopy (SEM), and four-point probe (FPP) measurements. Cu-1.8Al alloy thin film exhibited good thermal stability and low electrical resistivity (˜5.0 μΩ cm) after annealing at 500°C for 1 h or 400°C for 7 h. No copper silicide was observed at the Cu-Al/Si interface by GIXRD analysis or SEM for this sample. This result indicates that doping Cu thin film with small amounts of Al can achieve high thermal stability and low electrical resistivity, suggesting that Cu-1.8Al alloy thin film could be used for barrierless Cu metallization on Si substrate.

  18. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

    2013-05-01

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

  19. Laser sintering of magnesia with nanoparticles of iron oxide and aluminum oxide

    Energy Technology Data Exchange (ETDEWEB)

    García, L.V.; Mendivil, M.I.; Roy, T.K. Das; Castillo, G.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Cd. Universitaria, San Nicolas de los Garza, Nuevo Leon 66451 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Cd. Universitaria, San Nicolas de los Garza, Nuevo Leon 66451 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2015-05-01

    Highlights: • Laser sintered MgO pellets with nanoparticles of Al{sub 2}O{sub 3} and Fe{sub 2}O{sub 3}. • Characterized these pellets by XRD, SEM and XPS. • Spinel formations were observed in both cases. • Changes in morphology and structure were analyzed. - Abstract: Nanoparticles of iron oxide (Fe{sub 2}O{sub 3}, 20–40 nm) and aluminum oxide (Al{sub 2}O{sub 3}, 50 nm) were mixed in different concentrations (3, 5 and 7 wt%) in a magnesium oxide (MgO) matrix. The mixture pellet was irradiated with 532 nm output from a Q-switched Nd:YAG laser using different laser fluence and translation speed for sintering. The refractory samples obtained were analyzed using X-ray diffraction technique, scanning electron microscopy and X-ray photoelectron spectroscopy. The results showed that the samples irradiated at translation speed of 110 μm/s and energy fluence of 1.7 J/cm{sup 2} with a concentration of 5 and 7 wt% of Fe{sub 2}O{sub 3} presented the MgFe{sub 2}O{sub 4} spinel-type phase. With the addition of Al{sub 2}O{sub 3} nanoparticles, at a translation speed of 110 μm/s and energy fluence of 1.7 J/cm{sup 2}, there were the formations of MgAl{sub 2}O{sub 4} spinel phase. The changes in morphologies and microstructure due to laser irradiation were analyzed.

  20. Flexible electrostatic nanogenerator using graphene oxide film.

    Science.gov (United States)

    Tian, He; Ma, Shuo; Zhao, Hai-Ming; Wu, Can; Ge, Jie; Xie, Dan; Yang, Yi; Ren, Tian-Ling

    2013-10-07

    Recently, graphene oxide (GO) super capacitors with ultra-high energy densities have received significant attention. In addition to their use in energy storage, GO capacitors might also have broad applications in renewable energy engineering, such as energy harvesting. Here, a flexible nanogenerator based on GO film is designed. A multilayer structure Al/PI/GO/PI/ITO is made on a flexible PET substrate. The GO nanogenerator could generate a peak voltage of 2 V with a current of 30 nA upon the repetitive application of a 15 N force with a frequency of 1 Hz. Moreover, the output voltage was increased to 34.4 V upon increasing the frequency of force application to 10 Hz. Compared with control samples, embedding GO film with a release structure into the device could significantly enhance the output voltage from 0.1 V to 2.0 V. The mechanism of our nanogenerator can be explained by an electrostatic effect, which is fundamentally different from that of previously reported piezoelectric and triboelectric generators. In this manuscript, we demonstrate flexible nanogenerators with large-area graphene based materials, which may open up new avenues of research with regard to applications in energy harvesting.

  1. Aluminum Nitride Formation From Aluminum Oxide/Phenol Resin Solid-Gel Mixture By Carbothermal Reduction Nitridation Method

    Directory of Open Access Journals (Sweden)

    Mylinh Dang Thy

    2015-06-01

    Full Text Available Hexagonal and cubic crystalline aluminum nitride (AlN particles were successfully synthesized using phenol resin and alpha aluminum oxide (α-Al2O3 as precursors through new solid-gel mixture and carbothermal reduction nitridaton (CRN process with molar ratio of C/Al2O3 = 3. The effect of reaction temperature on the decomposition of phenol resin and synthesis of hexagonal and cubic AlN were investigated and the reaction mechanism was also discussed. The results showed that α-Al2O3 powder in homogeneous solid-gel precursor was easily nitrided to yield AlN powder during the carbothermal reduction nitridation process. The reaction temperature needed for a complete conversion for the precursor was about 1700°C, which much lower than that when using α-Al2O3 and carbon black as starting materials. To our knowledge, phenol resin is the first time to be used for synthesizing AlN powder via carbothermal reduction and nitridation method, which would be an efficient, economical, cheap assistant reagent for large scale synthesis of AlN powder.

  2. Functional doped metal oxide films. Zinc oxide (ZnO) as transparent conducting oxide (TCO) titanium dioxide (TiO{sub 2}) as thermographic phosphor and protective coating

    Energy Technology Data Exchange (ETDEWEB)

    Nebatti Ech-Chergui, Abdelkader

    2011-07-29

    Metalorganic chemical vapor deposition (MOCVD) was used in the present work. Un-doped and Al-doped ZnO films were developed using two reactors: Halogen Lamp Reactor (HLR) (a type of Cold Wall Reactor) and Hot Wall Reactor (HWR), and a comparison was made between them in terms of the film properties. Zinc acetylacetonate was used as precursor for ZnO films while aluminum acetylacetonate was used for doping. The amount of Al doping can be controlled by varying the gas flow rate. Well ordered films with aluminum content between 0 and 8 % were grown on borosilicate glass and silicon. The films obtained are 0.3 to 0.5 {mu}m thick, highly transparent and reproducible. The growth rate of ZnO films deposited using HLR is less than HWR. In HLR, the ZnO films are well oriented along c-axis ((002) plane). ZnO films are commonly oriented along the c-axis due to its low surface free energy. On the other hand, the HWR films are polycrystalline and with Al doping these films aligned along the a-axis ((100) plane) which is less commonly observed. The best films were obtained with the HLR method showing a minimum electrical resistivity of 2.4 m{omega}cm and transmittance of about 80 % in the visible range. The results obtained for Al-doped films using HLR are promising to be used as TCOs. The second material investigated in this work was un-doped and doped titanium dioxide (TiO{sub 2}) films- its preparation and characterization. It is well known that thermographic phosphors can be used as an optical method for the surface temperature measurement. For this application, the temperature-dependent luminescence properties of europium (III)-doped TiO{sub 2} thin films were studied. It was observed that only europium doped anatase films show the phosphorescence. Rutile phase do not show phosphorescence. The films were prepared by the sol-gel method using the dip coating technique. The structures of the films were determined by X-ray diffraction (XRD). The excitation and the emission

  3. Ablation characteristics of aluminum oxide and nitride ceramics during femtosecond laser micromachining

    International Nuclear Information System (INIS)

    Kim, Sung Hoon; Sohn, Ik-Bu; Jeong, Sungho

    2009-01-01

    Femtosecond laser ablation of aluminum oxide (Al 2 O 3 ) and aluminum nitride (AlN) ceramics was performed under normal atmospheric conditions (λ = 785 nm, τ p = 185 fs, repetition rate = 1 kHz), and threshold laser fluencies for single- and multi-pulse ablation were determined. The ablation characteristics of the two ceramics showed similar trends except for surface morphologies, which revealed virtually no melting in Al 2 O 3 but clear evidence of melting for AlN. Based on subsequent X-ray photoelectron spectroscopy (XPS) analyses, the chemistry of these ceramics appeared to remain the same before and after femtosecond laser ablation.

  4. ASSESSMENT OF CYTOTOXIC EFFECT OF LOW-DIMENSIONAL ALUMINUM OXIDE STRUCTURES ON TUMOR CELLS

    Directory of Open Access Journals (Sweden)

    M. S. Korovin

    2016-01-01

    Full Text Available Nano-dimensional materials have recently attracted much attention of researchers with respect of their potential role in medicine. Physical mechanisms of interaction of nanostructures with tumor cells will help to develop new approaches to treatment of cancer. Recent studies have shown that the physicochemical properties of nanostructures, such as shape and size, are the important factors of their biological activity and toxicity. the purpose of the study was to determine the role of the shape of aluminum oxide nanostructures in their toxic effects on tumor cells. material and methods. Based on aluminum oxide phases, positively charged lowdimensional structures having different shapes (agglomerates of nanosheets, nameplates, and cone-shaped nanoaggregates were synthesized with the help of aluminum nanoparticles. The resulting particles were characterized by transmission electron microscopy and Xray diffraction. The toxicity effect of low-dimensional aluminum oxide structures was assessed by MTT assay using A549, HeLa, MDA and PyMT cell lines. results. Agglomerates of nanosheets were shown to have the most pronounced toxic effect on the examined cell lines, while nanoplates and cone-shaped nanoaggregates were non-toxic. Conclusion. The toxic effect of agglomerates of 

  5. Effect of ionization on the oxidation kinetics of aluminum nanoparticles

    Science.gov (United States)

    Zheng, Yao-Ting; He, Min; Cheng, Guang-xu; Zhang, Zaoxiao; Xuan, Fu-Zhen; Wang, Zhengdong

    2018-03-01

    Molecular dynamics simulation (MD) of the observed stepwise oxidation of core-shell structured Al/Al2O3 nanoparticles is presented. Different from the metal ion hopping process in the Cabrera-Mott model, which is assumed to occur only at a certain distance from the oxide layer, the MD simulation shows that Al atoms jump over various interfacial gaps directly under the thermal driving force. The energy barrier for Al ionization is found to be increased along with the enlargement of interfacial gap. A mechanism of competition between thermal driving force and ionization potential barrier is proposed in the interpretation of stepwise oxidation behavior.

  6. In-situ electrochemical doping of nanoporous anodic aluminum oxide with indigo carmine organic dye

    International Nuclear Information System (INIS)

    Stępniowski, Wojciech J.; Norek, Małgorzata; Budner, Bogusław; Michalska-Domańska, Marta; Nowak-Stępniowska, Agata; Bombalska, Aneta; Kaliszewski, Miron; Mostek, Anna; Thorat, Sanjay; Salerno, Marco; Giersig, Michael; Bojar, Zbigniew

    2016-01-01

    Nanoporous anodic aluminum oxide was formed in sulfuric acid with addition of indigo carmine. During anodizing, the organic dye was incorporated into the porous oxide walls. X-ray photoelectron spectroscopy revealed the presence of nitrogen and sulfur in the anodic aluminum oxide. Two types of incorporated sulfur were found: belonging to the sulfate anions SO 4 2− of the electrolyte and belonging to the C-SO 3 − side groups of the indigo carmine. Raman spectroscopy confirmed the incorporation and showed that the inorganic–organic hybrid material inherited optical properties from the indigo carmine. Typical modes from pyrrolidone rings, unique for indigo carmine in the investigated system (650 and 1585 cm −1 ), were found to be the strongest for the greatest anodizing voltages used. Despite the indigo carmine incorporation, the morphology of the oxide is still nanoporous and its geometry is still tuned by the voltage applied during aluminum anodization. This work presents an inexpensive and facile approach to doping an inorganic oxide material with organic compounds. - Highlights: • Nanoporous anodic alumina was formed in electrolyte with indigo carmine. • XPS confirmed the presence of N and S in anodic alumina. • Raman spectroscopy revealed indigo carmine bands in anodic alumina. • The higher the voltage, the more indigo carmine was incorporated.

  7. In-situ electrochemical doping of nanoporous anodic aluminum oxide with indigo carmine organic dye

    Energy Technology Data Exchange (ETDEWEB)

    Stępniowski, Wojciech J., E-mail: wojciech.stepniowski@wat.edu.pl [Department of Advanced Materials and Technology, Faculty of Advanced Technology and Chemistry, Military University of Technology, 2 Kaliskiego Str., 00-908 Warszawa (Poland); Norek, Małgorzata [Department of Advanced Materials and Technology, Faculty of Advanced Technology and Chemistry, Military University of Technology, 2 Kaliskiego Str., 00-908 Warszawa (Poland); Budner, Bogusław [Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warszawa (Poland); Michalska-Domańska, Marta [Department of Advanced Materials and Technology, Faculty of Advanced Technology and Chemistry, Military University of Technology, 2 Kaliskiego Str., 00-908 Warszawa (Poland); Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warszawa (Poland); Nowak-Stępniowska, Agata; Bombalska, Aneta; Kaliszewski, Miron [Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warszawa (Poland); Mostek, Anna [Department of Advanced Materials and Technology, Faculty of Advanced Technology and Chemistry, Military University of Technology, 2 Kaliskiego Str., 00-908 Warszawa (Poland); Thorat, Sanjay; Salerno, Marco [Department of Nanophysics, Istituto Italiano di Tecnologia, via Morego 30, Genova I-16163 (Italy); Giersig, Michael [Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, 14195 Berlin (Germany); Bojar, Zbigniew [Department of Advanced Materials and Technology, Faculty of Advanced Technology and Chemistry, Military University of Technology, 2 Kaliskiego Str., 00-908 Warszawa (Poland)

    2016-01-01

    Nanoporous anodic aluminum oxide was formed in sulfuric acid with addition of indigo carmine. During anodizing, the organic dye was incorporated into the porous oxide walls. X-ray photoelectron spectroscopy revealed the presence of nitrogen and sulfur in the anodic aluminum oxide. Two types of incorporated sulfur were found: belonging to the sulfate anions SO{sub 4}{sup 2−} of the electrolyte and belonging to the C-SO{sub 3}{sup −} side groups of the indigo carmine. Raman spectroscopy confirmed the incorporation and showed that the inorganic–organic hybrid material inherited optical properties from the indigo carmine. Typical modes from pyrrolidone rings, unique for indigo carmine in the investigated system (650 and 1585 cm{sup −1}), were found to be the strongest for the greatest anodizing voltages used. Despite the indigo carmine incorporation, the morphology of the oxide is still nanoporous and its geometry is still tuned by the voltage applied during aluminum anodization. This work presents an inexpensive and facile approach to doping an inorganic oxide material with organic compounds. - Highlights: • Nanoporous anodic alumina was formed in electrolyte with indigo carmine. • XPS confirmed the presence of N and S in anodic alumina. • Raman spectroscopy revealed indigo carmine bands in anodic alumina. • The higher the voltage, the more indigo carmine was incorporated.

  8. Amorphous tin-cadmium oxide films and the production thereof

    Science.gov (United States)

    Li, Xiaonan; Gessert, Timothy A

    2013-10-29

    A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1.times.10.sup.20 cm.sup.-3 and 2.times.10.sup.20 cm.sup.-3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm.sup.2V.sup.-1 s.sup.-1 and 60 cm.sup.2V.sup.-1 s.sup.-1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

  9. Effects of aluminum and extremely low frequency electromagnetic radiation on oxidative stress and memory in brain of mice.

    Science.gov (United States)

    Deng, Yuanxin; Zhang, Yanwen; Jia, Shujie; Liu, Junkang; Liu, Yanxia; Xu, Weiwei; Liu, Lei

    2013-12-01

    This study was aimed to investigate the effect of aluminum and extremely low-frequency magnetic fields (ELF-MF) on oxidative stress and memory of SPF Kunming mice. Sixty male SPF Kunming mice were divided randomly into four groups: control group, ELF-MF group (2 mT, 4 h/day), load aluminum group (200 mg aluminum/kg, 0.1 ml/10 g), and ELF-MF + aluminum group (2 mT, 4 h/day, 200 mg aluminum/kg). After 8 weeks of treatment, the mice of three experiment groups (ELF-MF group, load aluminum group, and ELF-MF + aluminum group) exhibited firstly the learning memory impairment, appearing that the escaping latency to the platform was prolonged and percentage in the platform quadrant was reduced in the Morris water maze (MWM) task. Secondly are the pathologic abnormalities including neuronal cell loss and overexpression of phosphorylated tau protein in the hippocampus and cerebral cortex. On the other hand, the markers of oxidative stress were determined in mice brain and serum. The results showed a statistically significant decrease in superoxide dismutase activity and increase in the levels of malondialdehyde in the ELF-MF group (P < 0.05 or P < 0.01), load aluminum group (P < 0.01), and ELF-MF + aluminum group (P < 0.01). However, the treatment with ELF-MF + aluminum induced no more damage than ELF-MF and aluminum did, respectively. In conclusion, both aluminum and ELF-MF could impact on learning memory and pro-oxidative function in Kunming mice. However, there was no evidence of any association between ELF-MF exposure with aluminum loading.

  10. Plasma-enhanced chemical-vapor deposition of titanium aluminum carbonitride/amorphous-carbon nanocomposite thin films

    Science.gov (United States)

    Shieh, Jiann; Hon, Min Hsiung

    2002-01-01

    A new nanocomposite, titanium aluminum carbonitride/amorphous-carbon thin film was prepared by radio-frequency (rf) plasma-enhanced chemical-vapor deposition using titanium tetrachloride, aluminum trichloride, methane, and nitrogen as reactants. Hydrogen was used as carrier gases. A substrate temperature of 500 °C and an rf power of 100 W were used in all depositions. The films were characterized by x-ray powder diffraction, Raman spectroscopy, x-ray photoelectron spectroscopy, transmission electron microscopy, and scanning electron microscopy. The results show that nanograins of titanium aluminum carbonitride were embedded in an amorphous-carbon matrix. The nanograins had a (200) preferred orientation with columnar cross-section morphology. Mechanical properties were analyzed by nanoindentation and hardness was demonstrated to increase via this microstructure design approach. The effects of microstructure on mechanical properties were also determined.

  11. Plasma-enhanced chemical-vapor deposition of titanium aluminum carbonitride/amorphous-carbon nanocomposite thin films

    International Nuclear Information System (INIS)

    Shieh Jiann; Hon, M.H.

    2002-01-01

    A new nanocomposite, titanium aluminum carbonitride/amorphous-carbon thin film was prepared by radio-frequency (rf) plasma-enhanced chemical-vapor deposition using titanium tetrachloride, aluminum trichloride, methane, and nitrogen as reactants. Hydrogen was used as carrier gases. A substrate temperature of 500 deg. C and an rf power of 100 W were used in all depositions. The films were characterized by x-ray powder diffraction, Raman spectroscopy, x-ray photoelectron spectroscopy, transmission electron microscopy, and scanning electron microscopy. The results show that nanograins of titanium aluminum carbonitride were embedded in an amorphous-carbon matrix. The nanograins had a (200) preferred orientation with columnar cross-section morphology. Mechanical properties were analyzed by nanoindentation and hardness was demonstrated to increase via this microstructure design approach. The effects of microstructure on mechanical properties were also determined

  12. Ultrathin copper aluminum and nickel aluminide protective oxidation studied with an x-ray photoelectron spectrometer

    Science.gov (United States)

    Moore, J. F.; McCann, M. P.; Pellin, M. J.; Zinovev, A.; Hryn, J. N.

    2003-09-01

    Oxidation in a regime where diffusion is rapid and pressures are low is addressed. Kinetic effects under these conditions are minimized and a protective oxide film of near-equilibrium composition that is a few nanometers thick may form. Ultrathin oxides have great potential for addressing the corrosion resistance of metals, since they do not always suffer stress-induced cracking upon thermal cycling, and can be reformed under high temperature, oxidizing environments. Ultrathin oxide films are also preferable to those on a thick oxide scale for electrochemical applications due to their electrical properties. To study the growth of these oxide films, we have developed a high signal x-ray photoelectron spectrometer. The instrument can measure the near-surface composition during growth under oxygen partial pressures of up to 10-5 mbar and surface temperatures up to 1300 K. Under these conditions, films grow to a level of 3 nm in 1 h. Experiments with Cu-Al alloys show rapid segregation of Al upon oxygen exposure at 875 K, whereas exposures at lower temperatures result in a mixed oxide. With a Ni-Al intermetallic, higher temperatures were needed to preferentially segregate Al. Thermal cycling followed by exposure to chlorine in the same instrument is used as a measure of the degree of corrosion resistance of the oxides in question.

  13. Cuprous oxide thin films grown by hydrothermal electrochemical deposition technique

    International Nuclear Information System (INIS)

    Majumder, M.; Biswas, I.; Pujaru, S.; Chakraborty, A.K.

    2015-01-01

    Semiconducting cuprous oxide films were grown by a hydrothermal electro-deposition technique on metal (Cu) and glass (ITO) substrates between 60 °C and 100 °C. X-ray diffraction studies reveal the formation of cubic cuprous oxide films in different preferred orientations depending upon the deposition technique used. Film growth, uniformity, grain size, optical band gap and photoelectrochemical response were found to improve in the hydrothermal electrochemical deposition technique. - Highlights: • Cu 2 O thin films were grown on Cu and glass substrates. • Conventional and hydrothermal electrochemical deposition techniques were used. • Hydrothermal electrochemical growth showed improved morphology, thickness and optical band gap

  14. Effect of argon ion beam voltages on the microstructure of aluminum nitride films prepared at room temperature by a dual ion beam sputtering system

    International Nuclear Information System (INIS)

    Chen, H.-Y.; Han Sheng; Cheng, C.-H.; Shih, H.C.

    2004-01-01

    Aluminum nitride (AlN) films were successfully deposited at room temperature onto p-type (1 0 0) silicon wafers by manipulating argon ion beam voltages in a dual ion beam sputtering (DIBS). X-ray diffraction spectra showed that aluminum nitride films could be synthesized above 800 V. The (0 0 2) orientation was dominant at 800 V, above which the orientation was random. The atomic force microscope (AFM) images displayed a relatively smooth surface with the root-mean-square roughness of 2-3 nm, where this roughness decreased with argon ion beam voltage. The Al 2p 3/2 and N 1s spectra indicated that both the aluminum-aluminum bond and aluminum-nitrogen bond appeared at 600 V, above which only the aluminum-nitrogen bond was detected. Moreover, the atomic concentration in aluminum nitride films was concentrated in aluminum-rich phases in all cases. Nevertheless, the aluminum concentration markedly increased with argon ion beam voltages below 1000 V, above which the concentration decreased slightly. The correlation between the microstructure of aluminum nitride films and argon ion beam voltages is also discussed

  15. Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure.

    Science.gov (United States)

    Besleaga, Cristina; Dumitru, Viorel; Trinca, Liliana Marinela; Popa, Adrian-Claudiu; Negrila, Constantin-Catalin; Kołodziejczyk, Łukasz; Luculescu, Catalin-Romeo; Ionescu, Gabriela-Cristina; Ripeanu, Razvan-George; Vladescu, Alina; Stan, George E

    2017-11-17

    Aluminum Nitride (AlN) has been long time being regarded as highly interesting material for developing sensing applications (including biosensors and implantable sensors). AlN, due to its appealing electronic properties, is envisaged lately to serve as a multi-functional biosensing platform. Although generally exploited for its intrinsic piezoelectricity, its surface morphology and mechanical performance (elastic modulus, hardness, wear, scratch and tensile resistance to delamination, adherence to the substrate), corrosion resistance and cytocompatibility are also essential features for high performance sustainable biosensor devices. However, information about AlN suitability for such applications is rather scarce or at best scattered and incomplete. Here, we aim to deliver a comprehensive evaluation of the morpho-structural, compositional, mechanical, electrochemical and biological properties of reactive radio-frequency magnetron sputtered AlN nanostructured thin films with various degrees of c -axis texturing, deposited at a low temperature (~50 °C) on Si (100) substrates. The inter-conditionality elicited between the base pressure level attained in the reactor chamber and crystalline quality of AlN films is highlighted. The potential suitability of nanostructured AlN (in form of thin films) for the realization of various type of sensors (with emphasis on bio-sensors) is thoroughly probed, thus unveiling its advantages and limitations, as well as suggesting paths to safely exploit the remarkable prospects of this type of materials.

  16. Growth and morphology of sputtered aluminum thin films on P3HT surfaces.

    Science.gov (United States)

    Kaune, Gunar; Metwalli, Ezzeldin; Meier, Robert; Körstgens, Volker; Schlage, Kai; Couet, Sebastien; Röhlsberger, Ralf; Roth, Stephan V; Müller-Buschbaum, Peter

    2011-04-01

    Growth and morphology of an aluminum (Al) contact on a poly(3-hexylthiophene) (P3HT) thin film are investigated with X-ray methods and related to the interactions at the Al:P3HT interface. Grazing incidence small-angle scattering (GISAXS) is applied in situ during Al sputter deposition to monitor the growth of the layer. A growth mode is found, in which the polymer surface is wetted and rapidly covered with a continuous layer. This growth type results in a homogeneous film without voids and is explained by the strong chemical interaction between Al and P3HT, which suppresses the formation of three-dimensional cluster structures. A corresponding three stage growth model (surface bonding, agglomeration, and layer growth) is derived. X-ray reflectivity shows the penetration of Al atoms into the P3HT film during deposition and the presence of a 2 nm thick intermixing layer at the Al:P3HT interface. © 2011 American Chemical Society

  17. Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure

    Directory of Open Access Journals (Sweden)

    Cristina Besleaga

    2017-11-01

    Full Text Available Aluminum Nitride (AlN has been long time being regarded as highly interesting material for developing sensing applications (including biosensors and implantable sensors. AlN, due to its appealing electronic properties, is envisaged lately to serve as a multi-functional biosensing platform. Although generally exploited for its intrinsic piezoelectricity, its surface morphology and mechanical performance (elastic modulus, hardness, wear, scratch and tensile resistance to delamination, adherence to the substrate, corrosion resistance and cytocompatibility are also essential features for high performance sustainable biosensor devices. However, information about AlN suitability for such applications is rather scarce or at best scattered and incomplete. Here, we aim to deliver a comprehensive evaluation of the morpho-structural, compositional, mechanical, electrochemical and biological properties of reactive radio-frequency magnetron sputtered AlN nanostructured thin films with various degrees of c-axis texturing, deposited at a low temperature (~50 °C on Si (100 substrates. The inter-conditionality elicited between the base pressure level attained in the reactor chamber and crystalline quality of AlN films is highlighted. The potential suitability of nanostructured AlN (in form of thin films for the realization of various type of sensors (with emphasis on bio-sensors is thoroughly probed, thus unveiling its advantages and limitations, as well as suggesting paths to safely exploit the remarkable prospects of this type of materials.

  18. Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement

    Directory of Open Access Journals (Sweden)

    Chun Zhao

    2014-10-01

    Full Text Available Oxide materials with large dielectric constants (so-called high-k dielectrics have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs. A novel characterization (pulse capacitance-voltage method was proposed in detail. The pulse capacitance-voltage technique was employed to characterize oxide traps of high-k dielectrics based on the Metal Oxide Semiconductor (MOS capacitor structure. The variation of flat-band voltages of the MOS structure was observed and discussed accordingly. Some interesting trapping/detrapping results related to the lanthanide aluminum oxide traps were identified for possible application in Flash memory technology. After understanding the trapping/detrapping mechanism of the high-k oxides, a solid foundation was prepared for further exploration into charge-trapping non-volatile memory in the future.

  19. Production of ceramic layers on aluminum alloys by plasma electrolytic oxidation in alkaline silicate electrolytes

    Science.gov (United States)

    Lugovskoy, Alex; Zinigrad, Michael; Kossenko, Aleksey; Kazanski, Barbara

    2013-01-01

    Plasma electrolytic oxidation (PEO) of aluminum alloy 5052 in alkaline-silicate electrolytes having different SiO2/Na2O ratios (silicate indexes) was studied. For all the electrolytes 20-90 μm thick technological layer was obtained; composition, structure and properties of the oxidized layer were studied. For each sample, the oxidized layer consists of a denser internal and looser external sublayer. While for “n = 1 electrolytes” the oxidized layer is mainly formed by several kinds of alumina, the principal constituent of the oxidized layer for “n = 3 electrolytes” is mullite. Measurements of microhardness evidenced that it is apparently not influenced by the kind of silicate (n = 1 or n = 3) and by its concentration in the electrolyte. Electrolytes with silicate index n = 3 ensure better corrosion protection than those with n = 1. Corrosion protection parameters are significantly better for all PEO oxidized samples than for the untreated Al5052 alloy.

  20. Active Oxygen Generator by Silent Discharge and Oxidation Power in Formation of Oxide Thin Films

    Science.gov (United States)

    Tanaka, Masaaki; Kawagoe, Yasuyuki; Tsukazaki, Hisashi; Yamanishi, Kenichiro

    We have studied the low pressure silent discharge type active oxygen generator in terms of the application to the formation of oxide thin films. In this paper the oxidation power of active oxygen in the oxide thin film formation is compared with that of oxygen and ozone by forming silicon oxide thin films. It was confirmed that the oxidation power is in turn of active oxygen > ozone > oxygen from the experimental result of the number of x in SiOx thin film. Furthermore we applied active oxygen to the formation of the thin film high temperature super conductor and active oxygen was found to be effective to the formation of the thin film with high performance.

  1. Interface strength and degradation of adhesively bonded porous aluminum oxides

    DEFF Research Database (Denmark)

    T. Abrahami, Shoshan; M. M. de Kok, John; Gudla, Visweswara Chakravarthy

    2017-01-01

    environmental and health regulations. Replacing this traditional process in a high-demandingand high-risk industry such as aircraft construction requires an in-depth understanding of the underlying adhesion and degradationmechanisms at the oxide/resin interface resulting from alternative processes...

  2. Thickness measurement of aluminum, titanium, titanium silicide, and tungsten silicide films by x-ray fluorescence

    International Nuclear Information System (INIS)

    Ernst, S.; Lee, C.O.; Lee, J.J.

    1988-01-01

    X-ray fluorescence (XRF) has received a great deal of attention in the last few years as a quantitative means of determining both the stoichiometry and thickness of many different kinds of films. Examples include Ag and Cu films on mica substrates, Sn-Pb alloys on steel substrates, Al-Ti multilayers on Cu substrates and oxide films on silicon substrates. In XRF the sample is irradiated with x-rays which in turn cause x-rays to be given off by the sample. These x-rays that are given off by the sample can then be analyzed both for energy and intensity. The energy of the x-rays is characteristic of the elemental makeup of the sample and the intensity of the x-rays is dependent on how much of the particular element is present. The intensity then can be related to the thickness of a film if the stoichiometry of the film can be assumed constant. With the increased interest in silicides and more recently, the self-aligned silicide (salicide) process (8-10) for VLSI applications, in-line process monitoring of silicide film thickness has become important to integrated circuit manufacturing. In this study, the number of x-ray photons given of by Al, Ti, titanium silicide, and tungsten silicide films on silicon-based substrates was quantified so that a film thickness for an unknown sample could then be determined easily. In addition, XRF is a more accurate technique, limited principally by the accuracy technique, limited principally by the accuracy of the reference used and the amount of time the x-ray photons are counted

  3. L2O3 NANOSTRUCTURED FILMS CREATION BY METHOD OF ELECTROCHEMICAL ANODIZING

    Directory of Open Access Journals (Sweden)

    M. V. Zhukov

    2013-05-01

    Full Text Available Thin oxide films of aluminum were investigated by method of scanning probe microscopy. Electrical parameters of anodizing process were studied on different samples of aluminum to get the most structured oxide. The comparison of surface structure topography was held on oxide films by NTegra scanning probe microscope

  4. Deposition and characterisation of epitaxial oxide thin films for SOFCs

    KAUST Repository

    Santiso, José

    2010-10-24

    This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

  5. Nanocomposite oxide thin films grown by pulsed energy beam deposition

    International Nuclear Information System (INIS)

    Nistor, M.; Petitmangin, A.; Hebert, C.; Seiler, W.

    2011-01-01

    Highly non-stoichiometric indium tin oxide (ITO) thin films were grown by pulsed energy beam deposition (pulsed laser deposition-PLD and pulsed electron beam deposition-PED) under low oxygen pressure. The analysis of the structure and electrical transport properties showed that ITO films with a large oxygen deficiency (more than 20%) are nanocomposite films with metallic (In, Sn) clusters embedded in a stoichiometric and crystalline oxide matrix. The presence of the metallic clusters induces specific transport properties, i.e. a metallic conductivity via percolation with a superconducting transition at low temperature (about 6 K) and the melting and freezing of the In-Sn clusters in the room temperature to 450 K range evidenced by large changes in resistivity and a hysteresis cycle. By controlling the oxygen deficiency and temperature during the growth, the transport and optical properties of the nanocomposite oxide films could be tuned from metallic-like to insulating and from transparent to absorbing films.

  6. Standard test methods for chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade aluminum oxide and aluminum oxide-boron carbide composite pellets

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    1994-01-01

    1.1 These test methods cover procedures for the chemical, mass spectrometric, and spectrochemical analysis of nuclear-grade aluminum oxide and aluminum oxide-boron carbide composite pellets to determine compliance with specifications. 1.2 The analytical procedures appear in the following order: Sections Boron by Titrimetry 7 to 13 Separation of Boron for Mass Spectrometry 14 to 19 Isotopic Composition by Mass Spectrometry 20 to 23 Separation of Halides by Pyrohydrolysis 24 to 27 Fluoride by Ion-Selective Electrode 28 to 30 Chloride, Bromide, and Iodide by Amperometric Microtitrimetry 31 to 33 Trace Elements by Emission Spectroscopy 34 to 46 1.3 The values stated in SI units are to be regarded as the standard. 1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. (F...

  7. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  8. Multiferroicity in oxide thin films and heterostructures

    International Nuclear Information System (INIS)

    Glavic, Artur

    2012-01-01

    In this work a variety of different systems of transition metal oxides ABO 3 (perovskite materials, where B stands for a transition metal and A for a rare earth element) were produced as thin films and heterostructures and analyzed for the structural, magnetic and ferroelectric properties. For the epitaxial film preparation mostly pulse laser deposition (PLD) was applied. For one series high pressure oxide sputter deposition was used as well. The bulk multiferroics TbMnO 3 and DyMnO 3 , which develop their electric polarization due to a cycloidal magnetic order, have been prepared as single layers with thicknesses between 2 and 200 nm on YAlO 3 substrates using PLD and sputter deposition. The structural characterization of the surfaces and crystal structure where performed using X-ray reflectometry and diffraction, respectively. These yielded low surface roughness and good epitaxial growth. The magnetic behavior was macroscopically measured with SQUID magnetometry and microscopically with polarized neutron diffraction and resonant magnetic X-ray scattering. While all investigated samples showed antiferromagnetic order, comparable with the collinear magnetic phase of their bulk materials, only the sputter deposited samples exhibited the multiferroic low temperature cycloidal order. The investigation of the optical second harmonic generation in a TbMnO 3 sample could proof the presence of a ferroelectric order in the low temperature phase. The respective transition temperatures of the thin films have been very similar to those of the bulk materials. In contrast an increase in the rare earth ordering temperature has been observed, which reduces the Mn order slightly, an effect not known from bulk TbMnO 3 crystals. The coupling of the antiferromagnetic order in TbMnO 3 to ferromagnetic layers of LaCoO 3 was investigated in super-lattices containing 20 bilayers produced with PLD on the same substrates. The SQUID magnetometry yielded a strong influence of the

  9. A Review on Anodic Aluminum Oxide Methods for Fabrication of Nanostructures for Organic Solar Cells

    DEFF Research Database (Denmark)

    Goszczak, Arkadiusz Jaroslaw; Cielecki, Pawel Piotr

    2018-01-01

    , low fabrication cost and easy control over its nano-scale morphology, make AAO patterning methods an intriguing candidate for nanopatterning. Hence, in this work, we present a review on the fabrication techniques and on nanostructures from Anodic Aluminum Oxide (AAO) for OSC applications....... The versatility of such patterning technique is shown by pointing out the possibility of using an AAO template for the fabrication of nanowires by wetting, nanodots by evaporation, nanostructures by imprinting resists, organic layers and much more....

  10. The study of the effect of aluminum powders dispersion on the oxidation and kinetic characteristics

    Science.gov (United States)

    Gorbenko, T. I.; Gorbenko, M. V.; Orlova, M. P.; Volkov, S. A.

    2017-11-01

    Differential-scanning calorimetry (DSC) and thermogravimetric analysis (TG) were used to study micro-sized aluminum powder ASD-4 and nano-sized powder Alex. The dependence of the oxidation process on the dispersion of the sample particles is shown. The influence of thermogravimetric conditions on the thermal regime of the process was considered, and its kinetic parameters were determined. Calculations of the activation energy and the pre-exponential factor were carried out.

  11. Utilization of teflon and aluminum oxide for wheel cleaning in Minimum Quantity Lubrication (MQL) grinding

    OpenAIRE

    Barros,Bianca Gomes; Silva,Tiago da; Canarim,Rubens Chinali; Aguiar,Paulo Roberto de; Bianchi,Eduardo Carlos

    2014-01-01

    Researches concerning cooling-lubrication optimization in grinding have been conducted to contribute to a more sustainable process. An alternative to flood coolant is minimum quantity lubrication (MQL), which spray oil droplets in a compressed air jet. However, problems related to wheel cleaning were reported, due to wheel loading by a mixture of chips and oil, resulting in worsening of surface quality. This work aims to evaluate the viability of Teflon and aluminum oxide for wheel cleaning, ...

  12. Adsorption capacity of water-oxidized lanthanum-doped aluminum alloy powder

    OpenAIRE

    RYABINA A.; SHEVCHENKO V.; ESELEVICH D.

    2014-01-01

    The adsorption of nitrogen onto the surface of lanthanum-doped ultrafine aluminum (UFA) powder was studied before and after aqueous oxidation under relative adsorbate (Pa/Po) pressures from 0 to 1 using low-temperature nitrogen adsorption method in a volumetric static vacuum facility. The adsorption isotherms are considered for their compliance with the isotherms in the classification of S. Brunauer, L. Deming, U. Deming and E. Teller. The obtained results confirm that treatment of REM-contai...

  13. Chitosan–silver oxide nanocomposite film: Preparation and ...

    Indian Academy of Sciences (India)

    The antibacterial activity of the composite film against pathogenic bacteria viz. Escherichia coli, Staphylococcus aureus, Bacillus subtilis and Pseudomonas aeruginosa was measured by agar diffusion method. Our observations suggest that chitosan as biomaterial based nanocomposite film containing silver oxide has an ...

  14. Oxide ferroelectric thin films: synthesis from organometallic compounds and properties

    International Nuclear Information System (INIS)

    Vertoprakhov, Vladimir N; Nikulina, Lyubov' D; Igumenov, Igor K

    2005-01-01

    Chemical methods for the preparation of oxide ferroelectric thin films from organometallic compounds published over the last 10-15 years are considered systematically and generalised. Layers of these films are promising for the creation of non-volatile memory elements and for use in nano- and microelectronic devices.

  15. Epitaxial oxide thin films by pulsed laser deposition: Retrospect and ...

    Indian Academy of Sciences (India)

    Unknown

    Most of the materials so far grown into films by PLD are perovskite-related oxides. Therefore to grow these oxide films, lattice-matched single crystal substrates are necessary. Commonly used substrates are SrTiO3, LaAlO3, MgO, ZrO2 and sapphire which can be cut in [100], [110] or [111] direction. As thermal expansion.

  16. CO2 gas sensitivity of sputtered zinc oxide thin films

    Indian Academy of Sciences (India)

    TECS

    Abstract. For the first time, sputtered zinc oxide (ZnO) thin films have been used as a CO2 gas sensor. Zinc oxide thin films have been synthesized using reactive d.c. sputtering method for gas sensor applications, in the deposition temperature range from 130–153°C at a chamber pressure of 8⋅5 mbar for 18 h. Argon and ...

  17. Electrochemical investigations of ion-implanted oxide films

    International Nuclear Information System (INIS)

    Schultze, J.W.; Danzfuss, B.; Meyer, O.; Stimming, U.

    1985-01-01

    Oxide films (passive films) of 40-50 nm thickness were prepared by anodic polarization of hafnium and titanium electrodes up to 20 V. Multiple-energy ion implantation of palladium, iron and xenon was used in order to obtain modified films with constant concentration profiles of the implanted ions. Rutherford backscattering, X-ray photoelectron spectroscopy measurements and electrochemical charging curves prove the presence of implanted ions, but electrochemical and photoelectrochemical measurements indicate that the dominating effect of ion implantation is the disordering of the oxide film. The capacity of hafnium electrodes increases as a result of an increase in the dielectric constant D. For titanium the Schottky-Mott analysis shows that ion implantation causes an increase in D and the donor concentration N. Additional electronic states in the band gap which are created by the implantation improve the conductivity of the semiconducting or insulating films. This is seen in the enhancement of electron transfer reactions and its disappearance during repassivation and annealing. Energy changes in the band gap are derived from photoelectrochemical measurements; the absorption edge of hafnium oxide films decreases by approximately 2 eV because of ion implantation, but it stays almost constant for titanium oxide films. All changes in electrochemical behavior caused by ion implantation show little variation with the nature of the implanted ion. Hence the dominating effect seems to be a disordering of the oxide. (Auth.)

  18. Chitosan/graphene oxide biocomposite film from pencil rod

    Science.gov (United States)

    Gea, S.; Sari, J. N.; Bulan, R.; Piliang, A.; Amaturrahim, S. A.; Hutapea, Y. A.

    2018-03-01

    Graphene Oxide (GO) has been succesfully synthesized using Hummber method from graphite powder of pencil rod. The excellent solubility of graphene oxide (GO)in water imparts its feasibilty as new filler for reinforcement hydrophilic biopolymers. In this research, the biocomposite film was fabricated from chitosan/graphene oxide. The characteristics of graphene oxide were investigated using Fourier Transform Infrared (FT-IR) and X-ray Diffraction (XRD). The results of the XRD showed graphene structur in 2θ, appeared at 9.0715°with interlayer spacing was about 9.74063Å. Preparation films with several variations of chitosan/graphene oxide was done by casting method and characterized by mechanical and morphological analysis. The mechanical properties of the tensile test in the film show that the film CS/GO (85: 15)% has the optimum Young’s modulus size of 2.9 GPa compared to other variations of CS / GO film. Morphological analysis film CS/GO (85:15)% by Scanning Electron Microscopy (SEM), the obtained biocomposites film showed fine dispersion of GO in the CS matrix and could mix each other homogeneously.

  19. Dust formation and wind acceleration around the aluminum oxide-rich AGB star W Hydrae

    Science.gov (United States)

    Takigawa, Aki; Kamizuka, Takafumi; Tachibana, Shogo; Yamamura, Issei

    2017-11-01

    Dust grains, formed around asymptotic giant branch (AGB) stars, are accelerated by stellar radiation to drive stellar winds, which supply freshly synthesized nuclides to the Galaxy. Silicate is the dominant dust species in space, but 40% of oxygen-rich AGB stars are thought to have comparable amounts of aluminum oxide dust. Dust formation and the wind-driving mechanism around these oxygen-rich stars, however, are poorly understood. We report on the spatial distributions of AlO and 29SiO molecules around an aluminum oxide-rich M-type AGB star, W Hydrae, based on observations obtained with the Atacama Large Millimeter/submillimeter Array. AlO molecules were only observed within three stellar radii (Rstar), whereas 29SiO was distributed in the accelerated wind beyond 5 Rstar without significant depletion. This strongly suggests that condensed aluminum oxide dust plays a key role in accelerating the stellar wind and in preventing the efficient formation of silicate dust around W Hydrae.

  20. Elaboration of aluminum oxide-based graphite containing castables

    Science.gov (United States)

    Zhou, Ningsheng

    The aim of this work was set to develop effective and practicable new methods to incorporate natural flake graphite (FG) into the Al2O 3 based castables for iron and steel making applications. Three approaches, viz. micro-pelletized graphite (PG), crushed briquette of Al2O3-graphite (BAG) and TiO2 coated graphite (CFG), have been developed to insert flake graphite into Al2O 3 rich Al2O3-SiC based and Al2O 3-MgO based castables. These approaches were put into effect as countermeasures against the problems caused by FG in order: (1) to agglomerate the FG powders so as to decrease the specific surface area; (2) to diminish the density difference by using crushed carbon bonded compact of oxide-FG mixture; (3) to modify the surface of the flake graphite by forming hydrophilic coating; (4) to control the dispersion state of the graphite in the castable to maintain enough bonding strength; and (5) to use appropriate antioxidants to inhibit the oxidation of FG. The whole work was divided into two stages. In stage one, Al2O 3-SiC-C castables were dealt with to compare 4 modes of inserting graphite, i.e., by PG, BAG, CFG and FG. Overall properties were measured, all in correlation with graphite amount and incorporating mode. In stage two, efforts were made to reduce water demand in the Al2O3-MgO castables system. For this purpose, the matrix portion of the castable mixes was extracted and a coaxial double cylinder viscometer was adopted to investigate rheological characteristics of the matrix slurries vs. 4 kinds of deflocculants, through which the best deflocculant and its appropriate amount were found. Efforts were then made to add up to 30% MgO into the castables, using a limited amount of powders (antioxidants, Si, SiC, B4C and ZrB2, were added respectively or in combination. Overall properties of the castables, were investigated in correlation with MgO amount and graphite and antioxidant packages. Optimization work on oxidation and slag resistance was pursued. Finally

  1. Particle-particle interactions in aluminum reduction of boron oxide

    International Nuclear Information System (INIS)

    Logan, K.V.; McLemore, W.J.S.; Sparrow, J.T.

    1988-01-01

    The Georgia Tech Research Institute has been studying the use of thermite reactions for the production of specialized compounds since the mid-1950's. One of the goals of the research at GTRI is to define the reaction mechanism in order to be ble to predict the resultant reaction behaviour and thus prevent hazardous conditions. Thermite processing advantages are discussed in this paper. A typical thermite type of reaction to produce a composite titanium diboride/alumina is shown. The reactions typically use three starting materials for the production of a specific compound. A preliminary experimental mechanistic model of the extremely exothermic oxidation-reduction reaction is being developed

  2. Reduced water vapor transmission rates of low-temperature solution-processed metal oxide barrier films via ultraviolet annealing

    Energy Technology Data Exchange (ETDEWEB)

    Park, Seonuk; Jeong, Yong Jin; Baek, Yonghwa; Kim, Lae Ho; Jang, Jin Hyuk; Kim, Yebyeol [POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784 (Korea, Republic of); An, Tae Kyu [Department of Polymer Science & Engineering, Korea National University of Transportation, 50 Daehak-Ro, Chungju (Korea, Republic of); Nam, Sooji, E-mail: sjnam15@etri.re.kr [Information Control Device Section, Electronics and Telecommunications Research Institute, Daejeon, 305-700 (Korea, Republic of); Kim, Se Hyun, E-mail: shkim97@yu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, North Gyeongsang 712-749 (Korea, Republic of); Jang, Jaeyoung, E-mail: jyjang15@hanyang.ac.kr [Department of Energy Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of); Park, Chan Eon, E-mail: cep@postech.ac.kr [POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784 (Korea, Republic of)

    2017-08-31

    Highlights: • Sol-gel-derived aluminum oxide thin films were prepared using ultraviolet (UV) annealing. • UV irradiation dramatically promoted the densification of AlO{sub x} during the annealing stage, thereby forming a close-packed AlO{sub x} film. • The resulting AlO{sub x} films deposited on polymer substrates exhibited good water vapor blocking properties with low water vapor transmission rates (WVTRs). - Abstract: Here, we report the fabrication of low-temperature sol-gel-derived aluminum oxide (AlO{sub x}) films via ultraviolet (UV) annealing and the investigation of their water vapor blocking properties by measuring the water vapor transmission rates (WVTRs). The UV annealing process induced the formation of a dense metal-oxygen-metal bond (Al-O-Al structure) at low temperatures (<200 °C) that are compatible with commercial plastic substrates. The density of the UV-annealed AlO{sub x} thin film at 180 °C was comparable to that of AlO{sub x} thin films that have been thermally annealed at 350 °C. Furthermore, the UV-annealed AlO{sub x} thin films exhibited a high optical transparency in the visible region (>99%) and good electrical insulating properties (∼10{sup −7} A/cm{sup 2} at 2 MV/cm). Finally, we confirmed that a dense AlO{sub x} thin film was successfully deposited onto the plastic substrate via UV annealing at low temperatures, leading to a substantial reduction in the WVTRs. The Ca corrosion test was used to measure the WVTRs of AlO{sub x} thin films deposited onto polyethylene naphthalate or polyimide substrates, determined to be 0.0095 g m{sup −2} day{sup −1} (25 °C, 50% relative humidity) and 0.26 g m{sup −2} day{sup −1}, respectively.

  3. Plasma oxidation as a tool to design oxide films at low temperatures

    International Nuclear Information System (INIS)

    Schennach, R.; Grady, T.; Naugle, D.G.; Parga, J.R.; McWhinney, H.; Cocke, D.L.

    2001-01-01

    Interfacial oxidation, an established approach to produce surface thin films for catalysts, corrosion, ware protective coatings and electronic structures is currently performed by thermal, anodic, and plasma methods. Fundamental physical-chemical models that can allow film design, particularly on alloys are lacking and plasma oxidation is the least studied of these methods. In this work, plasma oxidation of three CuZr alloys (CuZr 2 , CuZr, and Cu 51 Zr 14 ) has been studied using x-ray photoelectron spectroscopy and depth profiling methods. The dependence of the resulting oxide film on alloy composition and sample temperature during plasma oxidation is investigated. In contrast to thermal and electrochemical oxidation which lead to the formation of a zirconium oxide film, plasma oxidation leads to the formation of a copper oxide or metallic copper overlayer depending on temperature and copper concentration in the bulk. It is shown that plasma oxidation can be used to design oxide films at room temperature, which require high temperatures using thermal oxidation and are not achievable by anodic oxidation

  4. Determination of Ideal Broth Formulations Needed to Prepare Hydrous Aluminum Oxide Microspheres via the Internal Gelation Process

    Energy Technology Data Exchange (ETDEWEB)

    Collins, Jack Lee [ORNL; Pye, S. L. [University of Tennessee, Knoxville (UTK)

    2009-02-01

    A simple test-tube methodology was used to determine optimum process parameters for preparing hydrous aluminum oxide microspheres by the internal gelation process. Broth formulations of aluminum, hexamethylenetetramine, and urea were found that can be used to prepare hydrous aluminum oxide gel spheres in the temperature range of 60-90 C. A few gel-forming runs were made in which microspheres were prepared with some of these formulations in order to equate the test-tube gelation times with actual gelation times. These preparations confirmed that the test-tube methodology is reliable for determining the ideal broths.

  5. Applicability of poorly crystalline aluminum oxide for adsorption of arsenate.

    Science.gov (United States)

    Park, Youn-Jong; Yang, Jae-Kyu; Lee, Seung-Mok; Choi, Sang-Il

    2011-01-01

    This study examined the characteristics of arsenate adsorption on poorly crystalline oxide (PCAO) which was obtained from recycling of dry sanding powders (DSP) produced during sanding and sawing process in a decorative interior company. After calcinating DSP at 550°C, poorly crystalline oxide (PCAO) was obtained as an adsorbent. From the batch adsorption experiments, arsenate was completely removed up to the concentration of 10 mg/L by PCAO. The stability of PCAO as an adsorbent was evaluated at pH 7 and found that the arsenate adsorbed on PCAO was stable for 24 h. The predominant interaction between arsenate and PCAO was thought to be a strong chemical bond by spectroscopic analysis. The arsenate adsorption behavior onto PCAO was satisfactorily simulated with MINEQL+, suggesting that arsenate formed inner-sphere complexes with the surface of PCAO by chemisorption. Meanwhile, the presence of competitive anions such as PO(4) (3-), SO(4) (2-) and CO(3) (2-) decreased somewhat the removal efficiency of arsenate and the effects of competing anions on the adsorption of arsenate were in the order of PO(4) (3-) > SO(4) (2-) > CO(3) (2-) under pH 6. The application of PCAO to the real mine drainage was also carried out. Although the adsorption of arsenic on the PCAO was slightly decreased rather than that removed from synthetic wastewater due to competitive sorption by multiple ions, it was possible to meet the national discharge standard limit with increasing adsorbent concentration.

  6. Double-layer anti-reflection coating containing a nanoporous anodic aluminum oxide layer for GaAs solar cells.

    Science.gov (United States)

    Yang, Tianshu; Wang, Xiaodong; Liu, Wen; Shi, Yanpeng; Yang, Fuhua

    2013-07-29

    Multilayer anti-reflection (AR) coatings can be used to improve the efficiency of Gallium Arsenide (GaAs) solar cells. We propose an alternate method to obtain optical thin films with specified refractive indices, which is using a self-assembled nanoporous anodic aluminum oxide (AAO) template as an optical thin film whose effective refractive index can be tuned by pore-widening. Different kinds of double-layer AR coatings each containing an AAO layer were designed and investigated by finite difference time domain (FDTD) method. We demonstrate that a λ /4n - λ /4n AR coating consisting of a TiO(2) layer and an AAO layer whose effective refractive index is 1.32 realizes a 96.8% light absorption efficiency of the GaAs solar cell under AM1.5 solar spectrum (400 nm-860 nm). We also have concluded some design principles of the double-layer AR coating containing an AAO layer for GaAs solar cells.

  7. Study of film graphene/graphene oxide obtained by partial reduction chemical of oxide graphite

    International Nuclear Information System (INIS)

    Gascho, J.L.S.; Costa, S.F.; Hoepfner, J.C.; Pezzin, S.H.

    2014-01-01

    This study investigated the morphology of graphene/graphene oxide film obtained by partial chemical reduction of graphite oxide (OG) as well as its resistance to solvents. Films of graphene/graphene oxide are great candidates for replacement of indium oxide doped with tin (ITO) in photoelectric devices. The OG was obtained from natural graphite, by Hummer's method modified, and its reduction is made by using sodium borohydride. Infrared spectroscopy analysis of Fourier transform (FTIR), Xray diffraction (XRD) and scanning electron microscopy, high-resolution (SEM/FEG) for the characterization of graphene/graphene oxide film obtained were performed. This film proved to be resilient, not dispersing in any of the various tested solvents (such as ethanol, acetone and THF), even under tip sonication, this resistance being an important property for the applications. Furthermore, the film had a morphology similar to that obtained by other preparation methods.(author)

  8. Estudo da degradação da intensidade de fotoluminescência de filmes finos de óxido de alumínio dopados com cério Time degradation of photoluminescence intensity of cerium doped aluminum oxide thin films

    Directory of Open Access Journals (Sweden)

    C. C. B. Viana

    2005-03-01

    Full Text Available Filmes finos de alumina dopados com cério depositados por spray-pirólise podem ser utilizados como emissores fotoluminescentes na faixa do violeta-azul (360 - 410 nm. Todos os espectros destes filmes apresentaram espectros assimétricos resultantes da superposição de dois picos centrados em 365 e 395 nm. Os filmes envelhecidos apresentaram intensidade de luminescência menor que a observada nas amostras como-depositadas. Além disto, foi observado nos espectros das amostras envelhecidas um desvio da banda de emissão para menores comprimentos de onda. O tratamento térmico a 300 ºC durante oito horas diminuiu a intensidade de luminescência tanto das amostras como-depositadas como envelhecidas. Os filmes tratados apresentaram ainda uma razão entre as áreas dos picos centrados em 365 e 395 nm, menor que a observada nos filmes não-tratados levando ao deslocamento da banda de emissão para maiores comprimentos de onda.Thin films of alumina doped with cerium deposited by spray-pyrolysis can be used as photoluminescent emitters in the range of the violet-blue (360 - 410 nm. All of the spectra of these films presented asymmetrical features those are resultants of the overlap of two peaks centered in 365 and 395 nm. The aged films presented smaller luminescence than that observed in the as-deposited samples. Besides, it was observed in the spectra of the aged samples a deviation of the emission band for smaller wavelengths. The thermal treatment at 300 ºC for eight hours reduced the luminescence intensity of the as-deposited samples and of the aged samples. The treated films presented a ratio of peak areas centered in 365 and 395 nm smaller than observed in the non-treated films taking to the displacement of the emission band for larger wavelengths.

  9. Distinct physiological and molecular responses in Arabidopsis thaliana exposed to aluminum oxide nanoparticles and ionic aluminum.

    Science.gov (United States)

    Jin, Yujian; Fan, Xiaoji; Li, Xingxing; Zhang, Zhenyan; Sun, Liwei; Fu, Zhengwei; Lavoie, Michel; Pan, Xiangliang; Qian, Haifeng

    2017-09-01

    Nano-aluminium oxide (nAl 2 O 3 ) is one of the most widely used nanomaterials. However, nAl 2 O 3 toxicity mechanisms and potential beneficial effects on terrestrial plant physiology remain poorly understood. Such knowledge is essential for the development of robust nAl 2 O 3 risk assessment. In this study, we studied the influence of a 10-d exposure to a total selected concentration of 98 μM nAl 2 O 3 or to the equivalent molar concentration of ionic Al (AlCl 3 ) (196 μM) on the model plant Arabidopsis thaliana on the physiology (e.g., growth and photosynthesis, membrane damage) and the transcriptome using a high throughput state-of-the-art technology, RNA-seq. We found no evidence of nAl 2 O 3 toxicity on photosynthesis, growth and lipid peroxidation. Rather the nAl 2 O 3 treatment stimulated root weight and length by 48% and 39%, respectively as well as photosynthesis opening up the door to the use of nAl 2 O 3 in biotechnology and nano agriculture. Transcriptomic analyses indicate that the beneficial effect of nAl 2 O 3 was related to an increase in the transcription of several genes involved in root growth as well as in root nutrient uptake (e.g., up-regulation of the root hair-specific gene family and root development genes, POLARIS protein). By contrast, the ionic Al treatment decreased shoot and root weight of Arabidopsis thaliana by 57.01% and 45.15%, respectively. This toxic effect was coupled to a range of response at the gene transcription level including increase transcription of antioxidant-related genes and transcription of genes involved in plant defense response to pathogens. This work provides an integrated understanding at the molecular and physiological level of the effects of nAl 2 O 3 and ionic Al in Arabidopsis. Copyright © 2017 Elsevier Ltd. All rights reserved.

  10. Systematic review of potential health risks posed by pharmaceutical, occupational and consumer exposures to metallic and nanoscale aluminum, aluminum oxides, aluminum hydroxide and its soluble salts

    Science.gov (United States)

    Willhite, Calvin C.; Karyakina, Nataliya A.; Yokel, Robert A.; Yenugadhati, Nagarajkumar; Wisniewski, Thomas M.; Arnold, Ian M. F.; Momoli, Franco; Krewski, Daniel

    2016-01-01

    Aluminum (Al) is a ubiquitous substance encountered both naturally (as the third most abundant element) and intentionally (used in water, foods, pharmaceuticals, and vaccines); it is also present in ambient and occupational airborne particulates. Existing data underscore the importance of Al physical and chemical forms in relation to its uptake, accumulation, and systemic bioavailability. The present review represents a systematic examination of the peer-reviewed literature on the adverse health effects of Al materials published since a previous critical evaluation compiled by Krewski et al. (2007). Challenges encountered in carrying out the present review reflected the experimental use of different physical and chemical Al forms, different routes of administration, and different target organs in relation to the magnitude, frequency, and duration of exposure. Wide variations in diet can result in Al intakes that are often higher than the World Health Organization provisional tolerable weekly intake (PTWI), which is based on studies with Al citrate. Comparing daily dietary Al exposures on the basis of “total Al” assumes that gastrointestinal bioavailability for all dietary Al forms is equivalent to that for Al citrate, an approach that requires validation. Current occupational exposure limits (OELs) for identical Al substances vary as much as 15-fold. The toxicity of different Al forms depends in large measure on their physical behavior and relative solubility in water. The toxicity of soluble Al forms depends upon the delivered dose of Al+3 to target tissues. Trivalent Al reacts with water to produce bidentate superoxide coordination spheres [Al(O2)(H2O4)+2 and Al(H2O)6+3] that after complexation with O2•−, generate Al superoxides [Al(O2•)](H2O5)]+2. Semireduced AlO2• radicals deplete mitochondrial Fe and promote generation of H2O2, O2•− and OH•. Thus, it is the Al+3-induced formation of oxygen radicals that accounts for the oxidative damage that

  11. Elucidation of the electrochromic mechanism of nanostructured iron oxides films

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Lobato, M.A.; Martinez, Arturo I.; Castro-Roman, M. [Center for Research and Advanced Studies of the National Polytechnic Institute, Cinvestav Campus Saltillo, Carr. Saltillo-Monterrey Km. 13, Ramos Arizpe, Coah. 25900 (Mexico); Perry, Dale L. [Mail Stop 70A1150, Lawrence Berkeley National Laboratory, University of California, Berkeley, CA 94720 (United States); Zarate, R.A. [Departamento de Fisica, Facultad de Ciencias, Universidad Catolica del Norte, Casilla 1280, Antofagasta (Chile); Escobar-Alarcon, L. (Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico)

    2011-02-15

    Nanostructured hematite thin films were electrochemically cycled in an aqueous solution of LiOH. Through optical, structural, morphological, and magnetic measurements, the coloration mechanism of electrochromic iron oxide thin films was elucidated. The conditions for double or single electrochromic behavior are given in this work. During the electrochemical cycling, it was found that topotactic transformations of hexagonal crystal structures are favored; i.e. {alpha}-Fe{sub 2}O{sub 3} to Fe(OH){sub 2} and subsequently to {delta}-FeOOH. These topotactic redox reactions are responsible for color changes of iron oxide films. (author)

  12. Anti-oxidative effect of resveratrol on aluminum induced toxicity in rat cerebral tissue.

    Science.gov (United States)

    Zakaria, M M H; Hajipour, B; Estakhri, R; Saleh, B M

    2017-01-01

    The direct protective effects of resveratrol against oxidative stress have been demonstrated in neuroglial cells, the mechanisms of these effects are not fully understood. The aim of this research was to study the effect of resveratrol on AL induced cerebral injury in rat. We divided the groups as follows with 10 animals each: a) Group I - served as control receiving normal drinking water and diet ad libitum. b) Group II - animals were administered aluminum at a dose level of 100 mg/kg body weight for a period of 6 weeks daily through oral gavage. c) Group III - animals were administered aluminum at a dose level of 100 mg/kg body weight and resveratrol at a dose of 10 mg/kg body weight intraperitoneally for a period of 6 weeks daily. After 6 weeks rats were anesthetized and decapitated. Brains were removed immediately and frozen in liquid nitrogenRESULTS: The levels of SOD and GPx antioxidant enzymes were decreased in all of the groups receiving aluminium, but it was less severe in resveratrol treated group. SOD and GPx levels in aluminium + resveratrol group were higher than in the aluminum group (p aluminum group and the difference was significant (p toxicity by reducing MDA production in cerebral tissue. Resveratrol also attenuated SOD and GPx suppression in cerebral tissue significantly. Our findings provide the rationale for further studies directed to understanding the mechanism of resveratrol in preventing neurodeterioration (Tab. 1, Ref. 35).

  13. Corrosion and nanomechanical behaviors of plasma electrolytic oxidation coated AA7020-T6 aluminum alloy

    Energy Technology Data Exchange (ETDEWEB)

    Venugopal, A., E-mail: arjun_venu@hotmail.com [Materials and Metallurgy Group, Materials and Mechanical Entity, Vikram Sarabhai Space Centre, Thiruvananthapuram (India); Srinath, J. [Materials and Metallurgy Group, Materials and Mechanical Entity, Vikram Sarabhai Space Centre, Thiruvananthapuram (India); Rama Krishna, L. [International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur P.O., Hyderabad 500005 (India); Ramesh Narayanan, P.; Sharma, S.C.; Venkitakrishnan, P.V. [Materials and Metallurgy Group, Materials and Mechanical Entity, Vikram Sarabhai Space Centre, Thiruvananthapuram (India)

    2016-04-13

    Alumina coating was deposited on AA7020 aluminum alloy by plasma electrolytic oxidation (PEO) method. The corrosion, stress corrosion cracking (SCC) and nano-mechanical behaviors were examined by means of potentiodynamic polarization, slow strain rate test (SSRT) and nano-indentation tests. Potentiodynamic polarization (PP) was used to evaluate the corrosion resistance of the coating and slow strain rate test (SSRT) was used for evaluating the environmental cracking resistance in 3.5% NaCl solution. The mechanical properties (hardness and elastic modulus) were obtained from each indentation as a function of the penetration depth across the coating cross section. The above results were compared with similar PEO coated aluminum and magnesium alloys. Results indicated that PEO coating on AA7020 alloy significantly improved the corrosion resistance. However the environmental cracking resistance was found to be only marginal. The hardness and elastic modulus values were found to be much higher when compared to the base metal and similar PEO coated 7075 aluminum alloys. The fabricated coating also exhibited good adhesive strength with the substrate similar to other PEO coated aluminum alloys reported in the literature.

  14. Ballistic phonon and thermal radiation transport across a minute vacuum gap in between aluminum and silicon thin films: Effect of laser repetitive pulses on transport characteristics

    Science.gov (United States)

    Yilbas, B. S.; Ali, H.

    2016-08-01

    Short-pulse laser heating of aluminum and silicon thin films pair with presence of a minute vacuum gap in between them is considered and energy transfer across the thin films pair is predicted. The frequency dependent Boltzmann equation is used to predict the phonon intensity distribution along the films pair for three cycles of the repetitive short-pulse laser irradiation on the aluminum film surface. Since the gap size considered is within the Casimir limit, thermal radiation and ballistic phonon contributions to energy transfer across the vacuum gap is incorporated. The laser irradiated field is formulated in line with the Lambert's Beer law and it is considered as the volumetric source in the governing equations of energy transport. In order to assess the phonon intensity distribution in the films pair, equivalent equilibrium temperature is introduced. It is demonstrated that thermal separation of electron and lattice sub-systems in the aluminum film, due to the short-pulse laser irradiation, takes place and electron temperature remains high in the aluminum film while equivalent equilibrium temperature for phonons decays sharply in the close region of the aluminum film interface. This behavior is attributed to the phonon boundary scattering at the interface and the ballistic phonon transfer to the silicon film across the vacuum gap. Energy transfer due to the ballistic phonon contribution is significantly higher than that of the thermal radiation across the vacuum gap.

  15. Nano integrated lithium polymer electrolytes based on anodic aluminum oxide (AAO) templates

    Science.gov (United States)

    Bokalawela, Roshan S. P.

    Since their discovery in the 1970s, polymer electrolytes have been actively studied because they have properties important for many device applications. However, even after 40 years, the detailed mechanisms of conductivity in these electrolytes are still not completely understood. Moreover, the conductivity in polymer electrolytes is one of the limiting factors of these devices so that different methods to enhance conductivity are actively being explored. One proposed method of enhancing the conductivity is to confine the polymer electrolyte in the nanoscale, but the study of material properties at the nanoscale is challenging in this area. In this work, we confine poly(ethylene oxide) lithium triflate (PEO:LiTf)(X:1)X=10,30 polymer electrolytes in carefully fabricated nanometer-diameter anodized aluminum oxide (AAO) pore structures. We demonstrate two orders of magnitude higher conductivity in the confined structures versus that of bulk films. Using x-ray characterization we show that this increased conductivity is associated with ordered PEO polymer chains aligned in the template pore direction. The activation energy of the AAO-confined polymer electrolyte is found to be smaller than that of the unconfined melt and about half that of the unconfined solid. This result indicates that not only is the room-temperature confined polymer ordered, but that this order persists at temperatures where the nano-confined polymer electrolyte is expected to be a liquid. The geometric bulk resistances of the electrolytes were obtained by AC-impedance spectra, from which the ionic conductivities were calculated. The Arrhenius plots of temperature dependent ionic conductivities showed that the usual melting temperature of the PEO phase in confined PEO:LiTf(X:1) X=10,30 is suppressed and a single activation energy was evident throughout the temperature range 25--90 °C. Wide-angle x-ray scattering (WAXS) patterns show that the polymer chains in both the pure PEO and PEO:LiTf(10

  16. Doped nanostructured zinc oxide films grown by electrodeposition.

    Science.gov (United States)

    Donderis, V; Orozco, J; Cembrero, J; Curiel-Esparza, J; Damonte, L C; Hernández-Fenollosa, M A

    2010-02-01

    ZnO thin films doped with either In or Al are n-type oxide materials of interest for application in electronic devices and thin-film solar cells. In this work, the doped ZnO films were electrodeposited at 80 degrees C from an aqueous solution on polycrystalline conductive Indium Tin Oxide covered glass substrates. The incorporation of the dopants into the ZnO film has been verified by energy dispersive X-ray spectrum, X-Ray diffraction and optical transmission analysis. The optical and surface structure properties of the ZnO doped films are strongly affected by the In and Al concentrations in the electrodeposition solution as evidenced by optical transmission and reflection measurements, and scanning electron microscopy.

  17. Natural Oxidation of Ultra-Thin Copper Films

    Science.gov (United States)

    Semenov, V. A.; Oskirko, V. O.; Rabotkin, S. V.; Oskomov, K. V.; Solovyev, A. A.; Stepanov, S. A.

    2018-01-01

    The paper examines the oxidation of polycrystalline Cu films under the impact of ambient atmosphere in the course of extended time (from 20 to 90 days). It shows that in the case of 10 nm thick Cu films deposited onto the glass substrate by method of magnetron sputtering, one eventually observes the increase in transparency, surface resistance and surface roughness, as well as the decrease in reflection in the area of near infrared region. The most dramatic changes occur in films deposited in the pulse mode of sputtering with frequency of 3 kHz compared to films deposited in the direct current mode. Formation of sublayer ZnO:Al and 20 nm thick upper passivating layer ZnO:Al allows effectively preventing the oxidation of thin copper films under the impact of ambient atmosphere.

  18. Properties of Al- and Ga-doped thin zinc oxide films treated with UV laser radiation

    Science.gov (United States)

    Al-Asedy, Hayder J.; Al-Khafaji, Shuruq A.; Bakhtiar, Hazri; Bidin, Noriah

    2018-03-01

    This paper reports the Nd:YAG laser irradiation treated modified properties of aluminum (Al) and gallium (Ga) co-doped zinc oxide (ZnO) (AGZO) films prepared on Si-substrate via combined sol-gel and spin-coating method. The impact of varying laser energy (150-200 mJ) on the structure, morphology, electrical and optical properties of such AGZO films were determined. Laser-treated samples were characterized using various analytical tools. Present techniques could achieve a high-quality polycrystalline films compared with those produced via conventional high temperature processing. AGZO films irradiated with third harmonics UV radiation (355 nm) from Nd:YAG laser source revealed very low resistivity of 4.02 × 10- 3 Ω cm. The structural properties grain size was calculated firm the X-ray diffraction spectra using the Scherrer equation that increased from 12.7 to 22.5 nm as the annealing laser energy increased from (150-200) mJ. The differences in crystallinity and orientation are explained in terms of the thermal effect caused by laser irradiation. (FESEM) images have been demonstrated that Nd:YAG laser annealing can significantly improve the crystallinity level, densification, and surface flatness of sol-gel derived AGZO thin films that occurred as a result of laser processing. Synthesized AGZO films displayed favorable growth orientation along (101) lattice direction. AGZO films with energy band gap of 3.37-3.41 eV were obtained. Results on the crystallinity, surface morphology, roughness, bonding vibration, absorption, photoluminescence, and resistivity of the laser-irradiated films were analyzed and discussed.

  19. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin-films have been investigated as protective coating for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å/h. Etching in liquids with p...

  20. Tantalum oxide thin films as protective coatings for sensors

    DEFF Research Database (Denmark)

    Christensen, Carsten; Reus, Roger De; Bouwstra, Siebe

    1999-01-01

    Reactively sputtered tantalum oxide thin films have been investigated as protective coatings for aggressive media exposed sensors. Tantalum oxide is shown to be chemically very robust. The etch rate in aqueous potassium hydroxide with pH 11 at 140°C is lower than 0.008 Å h-l. Etching in liquids...

  1. Improved zinc oxide film for gas sensor applications

    Indian Academy of Sciences (India)

    Unknown

    Improved zinc oxide film for gas sensor applications. S ROY and S BASU*. Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302, India. Abstract. Zinc oxide (ZnO) is a versatile material for different commercial applications such as transparent electrodes, piezoelectric devices, varistors, SAW devices ...

  2. Synthesis and characterization of zinc oxide thin films prepared by ...

    African Journals Online (AJOL)

    Zinc oxide thin films were prepared with ammonia/ammonium chloride buffer as the reaction moderating agent in the chemical bath deposition technique. An observable color change during the reaction due to variations in the reactants concentration indicated the existence of the cupric (CuO) and cuprous (Cu2O) oxides ...

  3. Auger electron spectroscopy study of initial stages of oxidation in a copper - 19.6-atomic-percent-aluminum alloy

    Science.gov (United States)

    Ferrante, J.

    1973-01-01

    Auger electron spectroscopy was used to examine the initial stages of oxidation of a polycrystalline copper - 19.6 a/o-aluminum alloy. The growth of the 55-eV aluminum oxide peak and the decay of the 59-, 62-, and 937-eV copper peaks were examined as functions of temperature, exposure, and pressure. Pressures ranged from 1x10 to the minus 7th power to 0.0005 torr of O2. Temperatures ranged from room temperature to 700 C. A completely aluminum oxide surface layer was obtained in all cases. Complete disappearance of the underlying 937-eV copper peak was obtained by heating at 700 C in O2 at 0.0005 torr for 1 hr. Temperature studies indicated that thermally activated diffusion was important to the oxidation studies. The initial stages of oxidation followed a logarithmic growth curve.

  4. Oxide-based thin film transistors for flexible electronics

    Science.gov (United States)

    He, Yongli; Wang, Xiangyu; Gao, Ya; Hou, Yahui; Wan, Qing

    2018-01-01

    The continuous progress in thin film materials and devices has greatly promoted the development in the field of flexible electronics. As one of the most common thin film devices, thin film transistors (TFTs) are significant building blocks for flexible platforms. Flexible oxide-based TFTs are well compatible with flexible electronic systems due to low process temperature, high carrier mobility, and good uniformity. The present article is a review of the recent progress and major trends in the field of flexible oxide-based thin film transistors. First, an introduction of flexible electronics and flexible oxide-based thin film transistors is given. Next, we introduce oxide semiconductor materials and various flexible oxide-based TFTs classified by substrate materials including polymer plastics, paper sheets, metal foils, and flexible thin glass. Afterwards, applications of flexible oxide-based TFTs including bendable sensors, memories, circuits, and displays are presented. Finally, we give conclusions and a prospect for possible development trends. Project supported in part by the National Science Foundation for Distinguished Young Scholars of China (No. 61425020), in part by the National Natural Science Foundation of China (No. 11674162).

  5. Topological properties and functionalities in oxide thin films and interfaces

    Science.gov (United States)

    Uchida, Masaki; Kawasaki, Masashi

    2018-04-01

    As symbolized by the Nobel Prize in Physics 2016, ‘topology’ has been recognized as an essential standpoint to understand and control the physics of condensed matter. This concept may be spreading even into application areas such as novel electronics. In this trend, there has been reported a number of studies for oxide films and heterostructures with topologically non-trivial electronic or magnetic states. In this review, we overview the trends of new topological properties and functionalities in oxide materials by sorting out a number of examples. The technological advances in oxide film growth achieved over the last few decades are now opening the door for harnessing novel topological properties.

  6. Electrochemical Formation of Cerium Oxide/Layered Silicate Nanocomposite Films

    Directory of Open Access Journals (Sweden)

    Adele Qi Wang

    2016-01-01

    Full Text Available Cerium oxide/montmorillonite nanocomposite films were synthesized electrochemically from solutions containing 0.5 to 50% Na-montmorillonite. The nanocomposites were characterized by X-ray diffraction, scanning electron microscopy, Fourier transform infrared spectroscopy, and Raman spectroscopy. Nanocomposite films synthesized from montmorillonite concentrations lower than 10% were continuous, uniform, and dense. X-ray diffraction confirmed that the nanocomposite films retain the face-centered cubic structure of cerium oxide while incorporating exfoliated platelets of the montmorillonite into the matrix. In addition, calculations from XRD data showed particle sizes ranging from 4.50 to 6.50 nm for the nanocomposite coatings. Raman and FTIR spectroscopy had peaks present for cerium oxide and the layered silicates in the coatings. Cross-sectional scanning electron microscopy and energy-dispersive X-ray spectroscopy confirmed the presence of montmorillonite throughout the cerium oxide matrix.

  7. Non-isothermal oxidation of aluminum nanopowder coated by hydrocarbons and fluorohydrocarbons

    Science.gov (United States)

    Sossi, A.; Duranti, E.; Paravan, C.; DeLuca, L. T.; Vorozhtsov, A. B.; Gromov, A. A.; Pautova, Yu. I.; Lerner, M. I.; Rodkevich, N. G.

    2013-04-01

    Aluminum nanopowder (nAl) obtained by electrical explosion of wires and passivated/coated with hydrocarbons and fluorohydrocarbons is comprehensively characterized. Coatings of different natures (octadecanoic and hexadecanoic acid, (1,1,11) trihydroperfluoro-undecan-1-ol, Fluorel™ + ester from esterification of (1,1,11) trihydroperfluoro-undecan-1-ol with furan-2,5-dione) were applied on the particle surface. The powders were studied by TEM, SEM, DSC-TGA, and BET specific surface area. The active aluminum content was determined by volumetric analyses. Coated nAl particles were compared to non-coated powder by the corresponding reactivity parameters obtained from DSC-TGA. It was found that while fatty acids have a weak effect on the non-isothermal oxidation behavior, fluoroelastomers shift the oxidation onset of nAl to higher temperatures by ˜20 °C for the first oxidation stage and by ˜100 °C for the second oxidation stage.

  8. Surface reaction mechanisms during ozone and oxygen plasma assisted atomic layer deposition of aluminum oxide.

    Science.gov (United States)

    Rai, Vikrant R; Vandalon, Vincent; Agarwal, Sumit

    2010-09-07

    We have elucidated the reaction mechanism and the role of the reactive intermediates in the atomic layer deposition (ALD) of aluminum oxide from trimethyl aluminum in conjunction with O(3) and an O(2) plasma. In situ attenuated total reflection Fourier transform infrared spectroscopy data show that both -OH groups and carbonates are formed on the surface during the oxidation cycle. These carbonates, once formed on the surface, are stable to prolonged O(3) exposure in the same cycle. However, in the case of plasma-assisted ALD, the carbonates decompose upon prolonged O(2) plasma exposure via a series reaction kinetics of the type, A (CH(3)) --> B (carbonates) --> C (Al(2)O(3)). The ratio of -OH groups to carbonates on the surface strongly depends on the oxidizing agent, and also the duration of the oxidation cycle in plasma-assisted ALD. However, in both O(3) and O(2) plasma cycles, carbonates are a small fraction of the total number of reactive sites compared to the hydroxyl groups.

  9. Sound Absorption Characteristics of Aluminum Foams Treated by Plasma Electrolytic Oxidation.

    Science.gov (United States)

    Jin, Wei; Liu, Jiaan; Wang, Zhili; Wang, Yonghua; Cao, Zheng; Liu, Yaohui; Zhu, Xianyong

    2015-11-09

    Open-celled aluminum foams with different pore sizes were fabricated. A plasma electrolytic oxidation (PEO) treatment was applied on the aluminum foams to create a layer of ceramic coating. The sound absorption coefficients of the foams were measured by an impedance tube and they were calculated by a transfer function method. The experimental results show that the sound absorption coefficient of the foam increases gradually with the decrease of pore size. Additionally, when the porosity of the foam increases, the sound absorption coefficient also increases. The PEO coating surface is rough and porous, which is beneficial for improvement in sound absorption. After PEO treatment, the maximum sound absorption of the foam is improved to some extent.

  10. Sound Absorption Characteristics of Aluminum Foams Treated by Plasma Electrolytic Oxidation

    Directory of Open Access Journals (Sweden)

    Wei Jin

    2015-11-01

    Full Text Available Open-celled aluminum foams with different pore sizes were fabricated. A plasma electrolytic oxidation (PEO treatment was applied on the aluminum foams to create a layer of ceramic coating. The sound absorption coefficients of the foams were measured by an impedance tube and they were calculated by a transfer function method. The experimental results show that the sound absorption coefficient of the foam increases gradually with the decrease of pore size. Additionally, when the porosity of the foam increases, the sound absorption coefficient also increases. The PEO coating surface is rough and porous, which is beneficial for improvement in sound absorption. After PEO treatment, the maximum sound absorption of the foam is improved to some extent.

  11. Growth and Breakdown of Surface Films and Localized Corrosion of Aluminum in Concentrated Chloride Media

    National Research Council Canada - National Science Library

    Lee, Jiajing

    1994-01-01

    ...) and mechanical stress for aluminum and titanium alloys in aggressive corrosion environments. This report presents results of some very preliminary experiments on aluminum alloys and titanium during anodic dissolution in chloride media...

  12. Decomposition of aluminum oxide, titanium(IV) oxide and niobium(V) oxide by fusion with ammonium sulfate

    International Nuclear Information System (INIS)

    Hashiba, Minoru; Miura, Eiji; Nurishi, Yukio; Hibino, Taizo

    1980-01-01

    A decomposition method with ammonium sulfate for Al 2 O 3 , TiO 2 and Nb 2 O 5 is presented. Al 2 O 3 and TiO 2 were fused at 400 and 450 0 C, for 2 h and 1 h, respectively, in the presence of ammonium sulfate (oxide/ammonium sulfate = 1/20 in weight). The fused products were dissolved and extracted into 4N H 2 SO 4 aqueous solution by warming on the water bath or gently boiling on asbestos. The degree of decomposition by fusion was confirmed from the amount of the oxides recovered in the following manner; with the aid of filter pulp, the residue was completely separated by filtration and washed thoroughly by hot water. To the filtrate was added ammonia water in order to precipitate aluminum and titanium hydroxide. The precipitates were ignited in platinum crucible at 1000 0 C and weighed in oxide form. Nb 2 O 5 was fused at 400 0 C for 1 h in the presence of ammonium sulfate (niobium pentoxide/ammonium sulfate = 1/10 in weight). The fused product was extracted with 20% tartaric acid aqueous solution. The degree of decomposition by fusion was confirmed from the amount of the oxide recovered as follows; after separation of the residue by a filter paper with the aid of filter pulp and washed thoroughly by 2% tartaric acid aqueous solution, freshly prepared 6% aqueous solution of cupferron was added to the filtrate and the precipitate formed was filtered immediately. The precipitate was ignited in platinum crucible at 1000 0 C and weighed as Nb 2 O 5 . The recovery of Al 2 O 3 , TiO 2 and Nb 2 O 5 by the present method was (99.2 +- 0.4), (100.1 +- 0.2) and (100.1 +- 0.2)%, respectively. It is concluded that Al 2 O 3 , TiO 2 and Nb 2 O 5 could be completely decomposed with ammonium sulfate. (author)

  13. Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion

    International Nuclear Information System (INIS)

    Ylivaara, Oili M.E.; Liu, Xuwen; Kilpi, Lauri; Lyytinen, Jussi; Schneider, Dieter; Laitinen, Mikko; Julin, Jaakko; Ali, Saima; Sintonen, Sakari; Berdova, Maria; Haimi, Eero; Sajavaara, Timo; Ronkainen, Helena; Lipsanen, Harri

    2014-01-01

    Use of atomic layer deposition (ALD) in microelectromechanical systems (MEMS) has increased as ALD enables conformal growth on 3-dimensional structures at relatively low temperatures. For MEMS device design and fabrication, the understanding of stress and mechanical properties such as elastic modulus, hardness and adhesion of thin film is crucial. In this work a comprehensive characterization of the stress, elastic modulus, hardness and adhesion of ALD aluminum oxide (Al 2 O 3 ) films grown at 110–300 °C from trimethylaluminum and water is presented. Film stress was analyzed by wafer curvature measurements, elastic modulus by nanoindentation and surface-acoustic wave measurements, hardness by nanoindentation and adhesion by microscratch test and scanning nanowear. The films were also analyzed by ellipsometry, optical reflectometry, X-ray reflectivity and time-of-flight elastic recoil detection for refractive index, thickness, density and impurities. The ALD Al 2 O 3 films were under tensile stress in the scale of hundreds of MPa. The magnitude of the stress decreased strongly with increasing ALD temperature. The stress was stable during storage in air. Elastic modulus and hardness of ALD Al 2 O 3 saturated to a fairly constant value for growth at 150 to 300 °C, while ALD at 110 °C gave softer films with lower modulus. ALD Al 2 O 3 films adhered strongly on cleaned silicon with SiO x termination. - Highlights: • The residual stress of Al 2 O 3 was tensile and stable during the storage in air. • Elastic modulus of Al 2 O 3 saturated to at 170 GPa for films grown at 150 to 300 °C. • At 110 °C Al 2 O 3 films were softer with high residual hydrogen and lower density. • The Al 2 O 3 adhered strongly on the SiO x -terminated silicon

  14. Development of Novel Al-Doped Zinc Oxide Films Fabricated on Etched Glass and Their Application to Solar Cells

    Science.gov (United States)

    Hongsingthong, Aswin; Aino, Akehiro; Sichanugrist, Porponth; Konagai, Makoto; Kuramochi, Hideto; Akiike, Ryo; Iigusa, Hitoshi; Utsumi, Kentaro; Shibutami, Tetsuo

    2012-10-01

    We have successfully developed novel aluminum-doped zinc oxide (AZO-X) films with a high haze ratio by the combined use of an etched glass substrate and wet-etched AZO-X films. The effects of the use of an etched glass substrate and wet-chemical etching on the properties of AZO-X films were investigated. The texture size and rms roughness of these films largely increased with glass surface roughening. Post-treatment using wet chemical etching slightly increased the texture size and rms roughness. The etched glass approach has been found to be a promising method for achieving an AZO-coated glass substrate with a high haze ratio. Using high-haze ratio AZO-X films as the front transparent conductive oxide (TCO) layers in solar cells, we improved the quantum efficiency (QE) of these solar cells particularly in the long-wavelength region. Thus, the AZO-X films deposited on etched glass have a high potential for use as front TCO layers in silicon-based thin-film solar cells.

  15. Sputter-deposited low reflectance vanadium oxide-molybdenum oxide thin films on silicon

    Science.gov (United States)

    Nayak, Manish Kumar; Esther, A. Carmel Mary; Bera, Parthasarathi; Dey, Arjun

    2017-09-01

    A single layer antireflective, smart, crystalline and nanocolumnar pulsed RF magnetron sputtered vanadium oxide-molybdenum oxide thin film on silicon is proposed for the alternate antireflective material for silicon based futuristic solar cell application. The VO-MO film with 130 nm thickness grown at 200 W shows significant low reflectance (1% within the 500-600 nm region). The VO-MO film with lowest reflectance shows a phase transition at around 55 °C which is beneficial due to film inherent variable IR emittance behaviour which may be helpful for eliminating excess heat load generated during in-service of silicon solar cell.

  16. Plasticity mechanisms in ultrafine grained freestanding aluminum thin films revealed by in-situ transmission electron microscopy nanomechanical testing

    International Nuclear Information System (INIS)

    Idrissi, Hosni; Kobler, Aaron; Amin-Ahmadi, Behnam; Schryvers, Dominique; Coulombier, Michael; Pardoen, Thomas; Galceran, Montserrat; Godet, Stéphane; Raskin, Jean-Pierre; Kübel, Christian

    2014-01-01

    In-situ bright field transmission electron microscopy (TEM) nanomechanical tensile testing and in-situ automated crystallographic orientation mapping in TEM were combined to unravel the elementary mechanisms controlling the plasticity of ultrafine grained Aluminum freestanding thin films. The characterizations demonstrate that deformation proceeds with a transition from grain rotation to intragranular dislocation glide and starvation plasticity mechanism at about 1% deformation. The grain rotation is not affected by the character of the grain boundaries. No grain growth or twinning is detected

  17. WO3 Nanoplates Film: Formation and Photocatalytic Oxidation Studies

    Directory of Open Access Journals (Sweden)

    Chin Wei Lai

    2015-01-01

    Full Text Available High surface area of tungsten oxide (WO3 nanoplates films was prepared via simple electrochemical anodization technique by controlling the fluoride content (NH4F in electrolyte. The design and development of WO3-based nanostructure assemblies have gained significant interest in order to maximize specific surface area for harvesting more photons to trigger photocatalytic oxidation reaction. This study aims to determine the optimum content of NH4F in forming WO3 nanoplates on W film with efficient photocatalytic oxidation reaction for organic dye degradation by utilizing our solar energy. The NH4F was found to influence the chemical dissolution and field-assisted dissolution rates, thus modifying the final morphological of WO3-based nanostructure assemblies film. It was found that 0.7 wt% of NH4F is the minimum amount to grow WO3 nanoplates film on W film. The photocatalysis oxidation experimental results showed that WO3 nanoplates film exhibited a maximum degradation of methyl orange dye (≈75% under solar illumination for 5 hours. This behavior was attributed to the better charge carriers transportation and minimizes the recombination losses with specific surface area of nanoplates structure.

  18. Study of zinc oxide thin film characteristics

    OpenAIRE

    Johari Shazlina; Muhammad Nazalea Yazmin; Zakaria Mohd Rosydi

    2017-01-01

    This paper presents the characterization of ZnO thin films with the thickness of 8nm, 30nm, and 200nm. The thin films were prepared using sol-gel method and has been deposited onto different substrate of silicon wafer, glass and quartz. The thin films were annealed at 400, 500 and 600°C. By using UV-Vis, the optical transmittance measurement were recorded by using a single beam spectrophotometer in the wavelength 250nm to 800nm. However, the transmittance in the visible range is hardly influe...

  19. Properties of Edible Films Based on Oxidized Starch and Zein

    Directory of Open Access Journals (Sweden)

    Elizabeth Argüello-García

    2014-01-01

    Full Text Available The objective of this work was to investigate the effect of zein and film formulation on mechanical and structural properties of native (FNS, and oxidized with 2.5% (FOSA and 3.5% (FOSB banana starch. The oxidized starch showed differences from native starch due to the oxidation process, showing a decrease in lipids, proteins, and amylose. The increase of the sodium hypochlorite increased the content of carbonyl and carboxyl groups in the ranges 0.015–0.028% and 0.022–0.031%, respectively. The film obtained from FOSB displayed the highest tensile strength (5.05 MPa and satisfactory elongation value (27.1%. The zein addition caused a decrease in these mechanical properties, as well as a significant decrease in water vapour permeability (WVP. However, films from FOSA and FOSB showed higher permeability than that of the native starch. The addition of glycerol and the level of oxidation increased the films moisture. Micrographs showed that, during the oxidation process, impurities were largely eliminated from the starch granule, noting more homogeneous structures both in granules and films.

  20. Stereospecific reduction of phosphine oxides to phosphines by the use of a methylation reagent and lithium aluminum hydride.

    Science.gov (United States)

    Imamoto, T; Kikuchi, S; Miura, T; Wada, Y

    2001-01-11

    [figure: see text] Various phosphine oxides are efficiently reduced by the use of a methylation reagent and lithium aluminum hydride. Optically active P-chirogenic phosphine oxides are also reduced with inversion of configuration at phosphorus atom by treatment with methyl triflate, followed by reaction with LiAlH4.

  1. Role of melt behavior in modifying oxidation distribution using an interface incorporated model in selective laser melting of aluminum-based material

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Dongdong, E-mail: dongdonggu@nuaa.edu.cn; Dai, Donghua [College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Yudao Street 29, Nanjing 210016 (China); Institute of Additive Manufacturing (3D Printing), Nanjing University of Aeronautics and Astronautics, Yudao Street 29, Nanjing 210016 (China)

    2016-08-28

    A transient three dimensional model for describing the molten pool dynamics and the response of oxidation film evolution in the selective laser melting of aluminum-based material is proposed. The physical difference in both sides of the scan track, powder-solid transformation and temperature dependent physical properties are taken into account. It shows that the heat energy tends to accumulate in the powder material rather than in the as-fabricated part, leading to the formation of the asymmetrical patterns of the temperature contour and the attendant larger dimensions of the molten pool in the powder phase. As a higher volumetric energy density is applied (≥1300 J/mm{sup 3}), a severe evaporation is produced with the upward direction of velocity vector in the irradiated powder region while a restricted operating temperature is obtained in the as-fabricated part. The velocity vector continuously changes from upward direction to the downward one as the scan speed increases from 100 mm/s to 300 mm/s, promoting the generation of the debris of the oxidation films and the resultant homogeneous distribution state in the matrix. For the applied hatch spacing of 50 μm, a restricted remelting phenomenon of the as-fabricated part is produced with the upward direction of the convection flow, significantly reducing the turbulence of the thermal-capillary convection on the breaking of the oxidation films, and therefore, the connected oxidation films through the neighboring layers are typically formed. The morphology and distribution of the oxidation are experimentally acquired, which are in a good agreement with the results predicted by simulation.

  2. Aluminum Film-Over-Nanosphere Substrates for Deep-UV Surface-Enhanced Resonance Raman Spectroscopy.

    Science.gov (United States)

    Sharma, Bhavya; Cardinal, M Fernanda; Ross, Michael B; Zrimsek, Alyssa B; Bykov, Sergei V; Punihaole, David; Asher, Sanford A; Schatz, George C; Van Duyne, Richard P

    2016-12-14

    We report here the first fabrication of aluminum film-over nanosphere (AlFON) substrates for UV surface-enhanced resonance Raman scattering (UVSERRS) at the deepest UV wavelength used to date (λ ex = 229 nm). We characterize the AlFONs fabricated with two different support microsphere sizes using localized surface plasmon resonance spectroscopy, electron microscopy, SERRS of adenine, tris(bipyridine)ruthenium(II), and trans-1,2-bis(4-pyridyl)-ethylene, SERS of 6-mercapto-1-hexanol (as a nonresonant molecule), and dielectric function analysis. We find that AlFONs fabricated with the 210 nm microspheres generate an enhancement factor of approximately 10 4-5 , which combined with resonance enhancement of the adsorbates provides enhancement factors greater than 10 6 . These experimental results are supported by theoretical analysis of the dielectric function. Hence our results demonstrate the advantages of using AlFON substrates for deep UVSERRS enhancement and contribute to broadening the SERS application range with tunable and affordable substrates.

  3. Phonon-induced enhancement of the energy gap and critical current of superconducting aluminum films

    International Nuclear Information System (INIS)

    Seligson, D.; Clarke, J.

    1983-01-01

    Enhancements of the energy gap Δ and the critical current I/sub c/ have been induced in thin superconducting aluminum films near the transition temperature T/sub c/ by pulses of phonons at approximately 9 GHz. In terms of the change in temperature Vertical BardeltaT/T/sub c/Vertical Bar necessary to produce the same enhancement in equilibrium, the gap enhancement increased smoothly with phonon power at fixed temperature and decreasing temperature at fixed phonon power; however, very close to T/sub c/ the enhancement rolled off. At relatively low phonon powers, the data were in good agreement with the theory of Eckern, Schmid, Schmutz, and Schoen, but at higher power levels the data fell markedly below the predictions of the theory. The critical-current enhancements in terms of Vertical BardeltaT/T/sub c/Vertical Bar were always larger than the gap enhancements at the same temperature and phonon power. At fixed phonon power the critical-current enhancements were nearly independent of temperature, except very close to T/sub c/ where the enhancement became small. The inclusion of the nonequilibrium quasiparticle distribution and the kinetic energy of the supercurrent in the theory relating the critical-current enhancement to the gap enhancement did not resolve the discrepancies between the two enhancements. It appears likely that there is an additional mechanism for critical-current enhancement that has not yet been identified

  4. Aluminum Wire Meshes Coated with Co-Mn-Al and Co Oxides as Catalysts for Deep Ethanol Oxidation.

    Czech Academy of Sciences Publication Activity Database

    Jirátová, Květa; Kovanda, F.; Balabánová, Jana; Kšírová, P.

    2018-01-01

    Roč. 304, SI (2018), s. 165-171 ISSN 0920-5861. [Czech-Italian-Spanish Symposium in Catalysis /7./. Třešť, 13.06.2017-17.06.2017] R&D Projects: GA ČR GA17-08389S Institutional support: RVO:67985858 Keywords : GA17-08389S * Co-Mn-Al mixed oxides * aluminum mesh Subject RIV: CI - Industrial Chemistry, Chemical Engineering OBOR OECD: Chemical process engineering Impact factor: 4.636, year: 2016

  5. Aluminum Wire Meshes Coated with Co-Mn-Al and Co Oxides as Catalysts for Deep Ethanol Oxidation.

    Czech Academy of Sciences Publication Activity Database

    Jirátová, Květa; Kovanda, F.; Balabánová, Jana; Kšírová, P.

    2018-01-01

    Roč. 304, SI (2018), s. 165-171 ISSN 0920-5861. [Czech-Italian- Spanish Symposium in Catalysis /7./. Třešť, 13.06.2017-17.06.2017] R&D Projects: GA ČR GA17-08389S Institutional support: RVO:67985858 Keywords : GA17-08389S * Co-Mn-Al mixed oxides * aluminum mesh Subject RIV: CI - Industrial Chemistry, Chemical Engineering OBOR OECD: Chemical process engineering Impact factor: 4.636, year: 2016

  6. The fabrication and thermal properties of bismuth-aluminum oxide nanothermometers.

    Science.gov (United States)

    Wang, Chiu-Yen; Chen, Shih-Hsun; Tsai, Ping-Hsin; Chiou, Chung-Han; Hsieh, Sheng-Jen

    2017-01-27

    Bismuth (Bi) nanowires, well controlled in length and diameter, were prepared by using an anodic aluminum oxide (AAO) template-assisted molding injection process with a high cooling rate. A high performance atomic layer deposition (ALD)-capped bismuth-aluminum oxide (Bi-Al 2 O 3 ) nanothermometer is demonstrated that was fabricated via a facile, low-cost and low-temperature method, including AAO templated-assisted molding injection and low-temperature ALD-capped processes. The thermal behaviors of Bi nanowires and Bi-Al 2 O 3 nanocables were studied by in situ heating transmission electron microscopy. Linear thermal expansion of liquid Bi within native bismuth oxide nanotubes and ALD-capped Bi-Al 2 O 3 nanocables were evaluated from 275 °C to 700 °C and 300 °C to 1000 °C, respectively. The results showed that the ALD-capped Bi-Al 2 O 3 nanocable possesses the highest working temperature, 1000 °C, and the broadest operation window, 300 °C-1000 °C, of a thermal-expanding type nanothermometer. Our innovative approach provides another way of fabricating core-shell nanocables and to further achieve sensing local temperature under an extreme high vacuum environment.

  7. Kinetics and thermodynamics of aluminum oxide nanopowder as adsorbent for Fe (III from aqueous solution

    Directory of Open Access Journals (Sweden)

    Mohamed A. Mahmoud

    2015-06-01

    Full Text Available Batch adsorption of Fe (III from aqueous solution by aluminum oxide nanopowder was studied in batch system. The removal efficiency (99.9% was obtained at pH 4 and 50 min contact time. The results indicate that the process follows Langmuir isotherm and pseudo-second-order kinetics model. As well as the thermodynamic data indicated that the exothermic nature process. The values of enthalpy (ΔH°, mean free energy (E and activation energy (Ea indicate that the adsorption process is physical sorption.

  8. Crystalline Chromium Doped Aluminum Oxide (RUBY) Use as a Luminescent Screen for Proton Beams

    International Nuclear Information System (INIS)

    Brown, K. A.; Gassner, D. M.

    1999-01-01

    In the search for a better luminescent screen material, the authors tested pieces of mono-crystalline chromium doped aluminum oxide (more commonly known as a ruby) using a 24 GeV proton beam. Due to the large variations in beam intensity and species which are run at the Alternating Gradient Synchrotron (AGS), they hope to find a material which can sufficiently luminesce, is compatible in vacuum, and maintain its performance level over extended use. Results from frame grabbed video camera images using a variety of neutral density filters are presented

  9. Modification of mechanical properties of single crystal aluminum oxide by ion beam induced structural changes

    International Nuclear Information System (INIS)

    Ensinger, W.; Nowak, R.; Horino, Y.; Baba, K.

    1993-01-01

    The mechanical behaviour of ceramics is essentially determined by their surface qualities. As a surface modification technique, ion implantation provides the possibility to modify the mechanical properties of ceramics. Highly energetic ions are implanted into the near-surface region of a material and modify its composition and structure. Ions of aluminum, oxygen, nickel and tantalum were implanted into single-crystal α-aluminum oxide. Three-point bending tests showed that an increase in flexural strength of up to 30% could be obtained after implantation of aluminum and oxygen. Nickel and tantalum ion implantation increased the fracture toughness. Indentation tests with Knoop and Vickers diamonds and comparison of the lengths of the developed radial cracks showed that ion implantation leads to a reaction in cracking. The observed effects are assigned to radiation induced structural changes of the ceramic. Ion bombardment leads to radiation damage and formation of compressive stress. In case of tantalum implantation, the implanted near-surface zone becomes amorphous. These effects make the ceramic more resistant to fracture. (orig.)

  10. Properties of Spray Pyrolysied Copper Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    S. S. Roy

    2017-02-01

    Full Text Available Copper oxide (CuO thin films were deposited on well cleaned glass substrates by spray pyrolysis technique (SPT from cupric acetate (Cu(CH3COO2.H2O precursor solutions of 0.05 – 0.15 M molar concentrations (MC at a substrate temperature of 350 °C and at an air pressure of 1 bar. Effect of varying MC on the surface morphology, structural optical and electrical properties of CuO thin films were investigated. XRD patterns of the prepared films revealed the formation of CuO thin films having monoclinic structure with the main CuO (111 orientation and crystalline size ranging from 8.02 to 9.05 nm was observed. The optical transmission of the film was found to decrease with the increase of MC. The optical band gap of the thin films for 0.10 M was fond to be 1.60 eV. The room temperature electrical resistivity varies from 31 and 24 ohm.cm for the films grown with MC of 0.05 and 0.10 M respectively. The change in resistivity of the films was studied with respect to the change in temperature was shown that semiconductor nature is present. This information is expected to underlie the successful development of CuO films for solar windows and other semi-conductor applications including gas sensors.

  11. Graphene Oxide Reinforced Polycarbonate Nanocomposite Films with Antibacterial Properties

    Directory of Open Access Journals (Sweden)

    R. Mahendran

    2016-01-01

    Full Text Available The incorporation of carbonaceous nanofillers into polymers can result in significant materials with improved physicochemical properties and novel composite functionalities. In this study, we have fabricated antibacterial, lightweight, transparent, and flexible graphene oxide (GO reinforced polycarbonate thin films by a facile and low-cost methodology. Solution blending is employed to get a homogeneous mixture of PC-GO composites at various loading of GO, and the thin films are prepared by dry-wet phase inversion technique. Thermal studies and micrographs of the films revealed the incorporation of GO in PC matrix. Microstructure of the thin films showed the homogeneous dispersion of GO at micro- and nanoscales; however, at higher loading of GO (0.7%, significant agglomeration is observed. More importantly, PC-GO composite films exhibited excellent antibacterial activities against E. coli and S. aureus, owing to the antibacterial nature of GO nanoparticles.

  12. Study of zinc oxide thin film characteristics

    Directory of Open Access Journals (Sweden)

    Johari Shazlina

    2017-01-01

    Full Text Available This paper presents the characterization of ZnO thin films with the thickness of 8nm, 30nm, and 200nm. The thin films were prepared using sol-gel method and has been deposited onto different substrate of silicon wafer, glass and quartz. The thin films were annealed at 400, 500 and 600°C. By using UV-Vis, the optical transmittance measurement were recorded by using a single beam spectrophotometer in the wavelength 250nm to 800nm. However, the transmittance in the visible range is hardly influenced by the film thickness, substrate used and annealed temperature and the averages are all above 80%. On surface morphology observed by AFM and FESEM, the results show that the increase of film thickness and annealed temperature will increase the mean grain size, surface-to-volume ration and RMS roughness. Besides that, higher annealing temperature cause the crystalline quality to gradually improve and the wurtzite structure of ZnO can be seen more clearly. Nonetheless, the substrate used had no effect on surface morphology, yet the uniformity of deposition on silicon wafer is better than glass and quartz.

  13. The growth of thin film epitaxial oxide-metal heterostructures

    CERN Document Server

    Wang, C

    1998-01-01

    films with lowest IR emissivity are those made from the purest targets despite their having comparable roughnesses to films from lower purity targets. The lowest emissivity achieved was in the range of 1.64% to 1.72% measured at 3.8 mu m for 1.5 to 1.8 mu m thick films. Modifications to standard idealized Drude theory have been made which, in a phenomenological way, take account of imperfections in the sputtered Al film, oxidation state and roughness. in electric properties of the Nb film and the reduction in crystalline quality of the MgO layer. The reduction of transition temperature to the superconducting state, Tc, and the similarly systematic increase in the Nb lattice parameter were observed consistent with oxygen content data reported in the literature, as the Nb became heavily oxidized. Examination of the surface of clean and oxidized Nb by atomic force microscopy, and deposition of MgO in UHV onto a previously oxidized Nb surface, suggested that the decrease in crystalline quality of the MgO can be a...

  14. Preparation of molybdenum oxide thin films by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Guerrero, R. Martinez [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico); Garcia, J.R. Vargas [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico)]. E-mail: rvargasga@ipn.mx; Santes, V. [CIIEMAD-IPN, Miguel Othon de Mendizabal 485, Mexico 07700, D.F. (Mexico); Gomez, E. [Instituto de Quimica-UNAM, Circuito Exterior-Ciudad Universitaria, Mexico 04510, D.F. (Mexico)

    2007-05-31

    In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 {sup o}C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 {sup o}C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of {alpha}-MoO{sub 3} phase at deposition temperatures ranging from 400 to 560 {sup o}C (673-833 K). Crystalline {alpha}-MoO{sub 3} films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 {sup o}C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance.

  15. Aluminum-induced neurotoxicity and oxidative damage in rabbits: protective effect of melatonin.

    Science.gov (United States)

    Abd-Elghaffar, Sary Kh; El-Sokkary, Gamal H; Sharkawy, Ahmed A

    2005-10-01

    The present study was aimed to investigate: (1) the neurotoxic oxidative damage of orally administered aluminum chloride (AlCl3) in rabbits (Biochemical and morphopathological studies). (2) The effect of melatonin as an antioxidant and free radical scavenger on oxidative neuropathic changes. Thirty-five male rabbits were divided into 4 groups (A, B, C [10 animals each] and D [5 animals]). Group A received AlCl3 (20 mg/l via drinking water for 3 months). Group B received AlCl3 for 3 months then administered with melatonin (10 mg/kg b.w. sc daily for 15 days). Group C received AlCl3 plus melatonin for 3 months. Group D received the solvent and served as control. Malondialdehyde (MDA) and 4-hydroxyalkenals (4-HDA) as lipid peroxides as well as superoxide dismutase (SOD) as an antioxidant enzyme were measured. Aluminum residue in the brain tissue was measured spectrophotometerically. The morphopathological changes were also examined by light and electron microscopes. MDA and 4-HAD were significantly increased in group A versus those of controls while significantly decreased in groups B and C compared with those of A group. SOD run in an opposite manner. Aluminum concentration was significantly increased in groups A, B and C when compared with group D while it significantly decreased in groups B and C when compared with that of group A. The neuropathlogical examination in the animals of group A revealed atrophy and apoptosis of the neurons in cerebral cortex and hippocampus. This was associated with neurofibrillary degeneration as well as argyrophilic inclusion. Schwan cell degeneration and nerve fiber demylination were also encountered. The elaboration of lipid peroxidation products, inhibition of antioxidant enzymes and the morphopathological changes were minimized in the Al/Mel treated groups and markedly improved in Al+Mel treated group Chronic aluminum exposure in rabbits had dramatic encephalopathic morphopathological lesions. It enhances the lipid peroxidation

  16. Superlubricating graphene and graphene oxide films

    Science.gov (United States)

    Sumant, Anirudha V.; Erdemir, Ali; Choi, Junho; Berman, Diana

    2018-02-13

    A system and method for forming at least one of graphene and graphene oxide on a substrate and an opposed wear member. The system includes graphene and graphene oxide formed by an exfoliation process or solution processing method to dispose graphene and/or graphene oxide onto a substrate. The system further includes an opposing wear member disposed on another substrate and a gas atmosphere of an inert gas like N2, ambient, a humid atmosphere and a water solution.

  17. Comparison of topotactic fluorination methods for complex oxide films

    Science.gov (United States)

    Moon, E. J.; Choquette, A. K.; Huon, A.; Kulesa, S. Z.; Barbash, D.; May, S. J.

    2015-06-01

    We have investigated the synthesis of SrFeO3-αFγ (α and γ ≤ 1) perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride) as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO2.5 films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  18. Comparison of topotactic fluorination methods for complex oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Moon, E. J., E-mail: em582@drexel.edu; Choquette, A. K.; Huon, A.; Kulesa, S. Z.; May, S. J., E-mail: smay@coe.drexel.edu [Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104 (United States); Barbash, D. [Centralized Research Facilities, Drexel University, Philadelphia, Pennsylvania 19104 (United States)

    2015-06-01

    We have investigated the synthesis of SrFeO{sub 3−α}F{sub γ} (α and γ ≤ 1) perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride) as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO{sub 2.5} films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  19. Comparison of topotactic fluorination methods for complex oxide films

    Directory of Open Access Journals (Sweden)

    E. J. Moon

    2015-06-01

    Full Text Available We have investigated the synthesis of SrFeO3−αFγ (α and γ ≤ 1 perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO2.5 films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  20. Cytotoxic and genotoxic characterization of aluminum and silicon oxide nanoparticles in macrophages.

    Science.gov (United States)

    Hashimoto, Masanori; Imazato, Satoshi

    2015-05-01

    Although aluminum oxide and silicon oxide nanoparticles are currently available as dental materials, there is a lack of basic information concerning their biocompatibility. This study evaluates the biological responses of cultured macrophages (RAW264) to aluminum oxide (Al2O3NPs) and silicon oxide nanoparticles (SiO2NPs) by analyzing cytotoxicity and genotoxicity. The nanoparticles are amorphous and spherical, with diameters of 13 nm for the Al2O3NPs and 12 nm for the SiO2NPs. The cultured RAW264 are exposed to the nanoparticles (NPs) and examined for cytotoxicity using the WST-8 cell viability and Hoechst/PI apoptosis assay, for genotoxicity by micronucleus analysis, for changes in nuclear shape (deformed nuclei) and for comet assay using confocal microscopy, and micromorphological analysis is done using scanning and transmission electron microscopes. Nuclei and DNA damage because of exposure to both types of NPs is observed by inmunostaining genotoxicity testing. The cytotoxicity and genotoxicity are well correlated in this study. Numerous NPs are observed as large aggregates in vesicles, but less or nonexistent NP internalization is seen in the nucleus or cytoplasm. These morphological results suggest that a primary cause of cell disruption is the chemical changes of the NPs in the low pH of vesicles (i.e., ionization of Al2O3 or SiO2) for both types of oxide NPs. Although further research on the elution of NP concentrations on cell or tissue activity under simulated clinical conditions is required, NP concentrations over 200 μg/mL are large enough to induce cytotoxic and genotoxic effects to cells. Copyright © 2015 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

  1. Reduction of Graphene Oxide Thin Films by Cobaltocene and Decamethylcobaltocene.

    Science.gov (United States)

    MacInnes, Molly M; Hlynchuk, Sofiya; Acharya, Saurabh; Lehnert, Nicolai; Maldonado, Stephen

    2018-01-17

    Reduced graphene oxide (RGO) films have been prepared by immersion of graphene oxide (GO) films at room temperature in nonaqueous solutions containing simple, outer-sphere metallocene reductants. Specifically, solutions of cobaltocene, cobaltocene and trifluoroacetic acid (TFA), and decamethylcobaltocene each showed activity for the rapid reduction of GO films cast on a wide variety of substrates. Each reactant increased the conductivity of the films by several orders of magnitude, with RGO films prepared with either decamethylcobaltocene or cobaltocene and TFA possessing the highest conductivities (∼10 4 S m -1 ). X-ray photoelectron spectroscopy suggested that while all three reagents lowered the content of carbon-oxygen functionalities, solutions of cobaltocene and TFA were the most effective at reducing the material to sp 2 carbon. Separately, Raman spectra and atomic force micrographs indicated that RGO films prepared with decamethylcobaltocene consisted of the largest graphitic domains and lowest macroscopic roughness. Cumulatively, the data suggest that the outer-sphere reductants can affect the conversion to RGO but the reactivity and mechanism depend on the standard potential of the reductant and the availability of protons. This work both demonstrates a new way to prepare high-quality RGO films on a wide range of substrate materials without annealing and motivates future work to elucidate the chemistry of RGO synthesis through the tunability of outer-sphere reductants such as metallocenes.

  2. Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

    International Nuclear Information System (INIS)

    Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

    2013-01-01

    Tungsten oxide (WO x ) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10 −4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO x -based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 10 6 , a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm 2 /V s was realized. Our results demonstrated that WO x -based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

  3. Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby

    Science.gov (United States)

    Zhang, Ji-Guang; Tracy, C. Edwin; Benson, David K.; Turner, John A.; Liu, Ping

    2000-01-01

    A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursor gas with the hydrogen and the oxygen to cause deposition of a vanadium oxide film on the substrate while the chamber deposition pressure is maintained at about one torr or less. Finally, the byproduct gases are removed from the plasma reaction chamber.

  4. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    International Nuclear Information System (INIS)

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 Angstrom), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 Angstrom of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films

  5. Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation

    Science.gov (United States)

    Liao, B.; Stangl, R.; Ma, F.; Mueller, T.; Lin, F.; Aberle, A. G.; Bhatia, C. S.; Hoex, B.

    2013-09-01

    We demonstrate that by using a water (H2O)-based thermal atomic layer deposited (ALD) aluminum oxide (Al2O3) film, excellent surface passivation can be attained on planar low-resistivity silicon wafers. Effective carrier lifetime values of up to 12 ms and surface recombination velocities as low as 0.33 cm s-1 are achieved on float-zone wafers after a post-deposition thermal activation of the Al2O3 passivation layer. This post-deposition activation is achieved using an industrial high-temperature firing process which is commonly used for contact formation of standard screen-printed silicon solar cells. Neither a low-temperature post-deposition anneal nor a silicon nitride capping layer is required in this case. Deposition temperatures in the 100-400 °C range and peak firing temperatures of about 800 °C (set temperature) are investigated. Photoluminescence imaging shows that the surface passivation is laterally uniform. Corona charging and capacitance-voltage measurements reveal that the negative fixed charge density near the AlOx/c-Si interface increases from 1.4 × 1012 to 3.3 × 1012 cm-2 due to firing, while the midgap interface defect density reduces from 3.3 × 1011 to 0.8 × 1011 cm-2 eV-1. This work demonstrates that direct firing activation of thermal ALD Al2O3 is feasible, which could be beneficial for solar cell manufacturing.

  6. Enhanced electroluminescence from nanoscale silicon p+ -n junctions made with an anodic aluminum oxide pattern.

    Science.gov (United States)

    Hong, T; Chen, T; Ran, G Z; Wen, J; Li, Y Z; Dai, T; Qin, G G

    2010-01-15

    An enhancement of the electroluminescence (EL) from nanoscale silicon p(+)-n junctions made with an anodic aluminum oxide (AAO) pattern was demonstrated. The nanoporous AAO pattern with a pore density of 1.4 x 10(10) cm(-2) and a pore diameter of 50 +/- 10 nm was fabricated by the two-step anodic oxidation method on a n-type silicon wafer. The nanoscale AAO patterned Si p(+)-n junctions achieved an EL enhancement factor up to about 5 compared to the unpatterned Si p(+)-n junctions. The enhancement may originate from a reduction of nonradiative recombination due to partial passivation of the Si surface by the AAO pattern and improvement of the light extraction due to surface nanotextures.

  7. Oxygen reduction reaction catalysts of manganese oxide decorated by silver nanoparticles for aluminum-air batteries

    International Nuclear Information System (INIS)

    Sun, Shanshan; Miao, He; Xue, Yejian; Wang, Qin; Li, Shihua; Liu, Zhaoping

    2016-01-01

    In this paper, the hybrid catalysts of manganese oxide decorated by silver nanoparticles (Ag-MnO x ) are fully investigated and show the excellent oxygen reduction reaction (ORR) activity. The Ag-MnO 2 is synthesized by a facile strategy of the electroless plating of silver on the manganese oxide. The catalysts are characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Then, the ORR activities of the catalysts are systematically investigated by the rotating disk electrode (RDE) and aluminum-air battery technologies. The Ag nanoparticles with the diameters at about 10 nm are anchored on the surface of α-MnO 2 and a strong interaction between Ag and MnO 2 components in the hybrid catalyst are confirmed. The electrochemical tests show that the activity and stability of the 50%Ag-MnO 2 composite catalyst (the mass ratio of Ag/MnO 2 is 1:1) toward ORR are greatly enhanced comparing with single Ag or MnO 2 catalyst. Moreover, the peak power density of the aluminum-air battery with 50%Ag-MnO 2 can reach 204 mW cm −2 .

  8. Anodic aluminum oxide with fine pore size control for selective and effective particulate matter filtering

    Science.gov (United States)

    Zhang, Su; Wang, Yang; Tan, Yingling; Zhu, Jianfeng; Liu, Kai; Zhu, Jia

    2016-07-01

    Air pollution is widely considered as one of the most pressing environmental health issues. Particularly, atmospheric particulate matters (PM), a complex mixture of solid or liquid matter suspended in the atmosphere, are a harmful form of air pollution due to its ability to penetrate deep into the lungs and blood streams, causing permanent damages such as DNA mutations and premature death. Therefore, porous materials which can effectively filter out particulate matters are highly desirable. Here, for the first time, we demonstrate that anodic aluminum oxide with fine pore size control fabricated through a scalable process can serve as effective and selective filtering materials for different types of particulate matters (such as PM2.5, PM10). Combining selective and dramatic filtering effect, fine pore size control and a scalable process, this type of anodic aluminum oxide templates can potentially serve as a novel selective filter for different kinds of particulate matters, and a promising and complementary solution to tackle this serious environmental issue.

  9. Zero-valent aluminum-mediated degradation of Bisphenol A in the presence of common oxidants.

    Science.gov (United States)

    Arslan-Alaton, I; Olmez-Hanci, T; Dogan, M; Ozturk, T

    2017-11-01

    The use of a commercial, nano-scale zero-valent aluminum (ZVA) powder was explored for the treatment of aqueous Bisphenol A (BPA). The study focused on the (i) activation of hydrogen peroxide (HP) and persulfate (PS) oxidants with ZVA to accelerate BPA degradation, (ii) comparison of the treatment performance in pure and real surface water (SW) samples, (iii) effects on toxicity and (iv) reuse potential of ZVA nanoparticles after ZVA/HP and ZVA/PS treatments. In pure water, ZVA coupled with HP or PS provided an effective means of BPA treatment particularly when PS was employed as the oxidant. On the other hand, in BPA-spiked SW, the ZVA/HP treatment combination outperformed ZVA/PS oxidation in terms of BPA removal, whereas ZVA/PS oxidation was superior in terms of organic carbon removal. According to the bioassays conducted in pure and real SW samples with the marine photobacteria Vibrio fischeri and the freshwater microalgae Pseudokirchneriella subcapitata, the toxicity response of BPA and its oxidation products was sensitive to the test organism and water matrix. The inhibitory effect of the reaction solution increased at the early stages of ZVA/PS treatment. The reuse potential of the ZVA/HP treatment system was higher than that of the ZVA/PS treatment system.

  10. Modelo predictivo del espesor de la capa de óxido y microdureza en aluminio Al3003-B14 y Al6063-T6 anodizado usando análisis multifactorial Oxide film thickness and microhardness prediction model of Al3003-B14 and Al6063-T6 anodized aluminum using multifactorial analysis

    Directory of Open Access Journals (Sweden)

    Leonardo Eladio Vergara Guillén

    2011-08-01

    Full Text Available En esta investigación se modela a partir de los parámetros del proceso el espesor de la capa de óxido y la microdureza de los aluminios Al3003 y Al6063 anodizados. Para ello se realizaron estudios de la microdureza y espesor de capa de la superficie anodizada, utilizando técnicas de análisis multifactorial y diseño robusto. Se establecieron los siguientes niveles de los parámetros del proceso: temperatura [15 °C, 25 °C], tiempo [30 min; 60 min], concentración de electrolito [1,2 M; 2 M], densidad de corriente [1 Amp/dm²; 3 Amp/dm²], aluminio [Al3003,Al6063] y como variable de ruido, la deformación plástica [0%, 10%, 20%, 30%]. Se propuso un diseño fraccionado 2(7-2 mixto, con el cual se efectuó un total de 48 pruebas usando soluciones electrolíticas de ácido sulfúrico. La medición de microdureza se realizó con un indentador Vickers con carga de 400 g; el espesor de la capa de óxido se captó mediante microscopia electrónica. A los resultados se les realizó un análisis de varianza (ANOVA, para determinar los factores significativos y la robustez de los efectos. Se encontraron resultados de microdureza [HV] [85,74-308,87]; y espesor de óxido [µm] [12,82- 94,69]. Finalmente, se muestran los modelos de predicción de cada una de las respuestas en función de los factores significativos estas ecuaciones permitirán seleccionar la microdureza y espesor de la capa de óxido para cumplir los requerimientos de un producto particular mediante una selección apropiada de los parámetros del proceso.In this research, the thickness of the oxide layer and the microhardness of anodized aluminum Al3003 and Al6063 are modeled based on process parameters. To this end, studies of the microhardness and the thickness layer of the anodized surface were made, via techniques of multifactorial analysis and robust design. The following levels of the process parameters were established: temperature [15°C, 25°C], time [30min; 60min

  11. Structural and optical properties of electrodeposited molybdenum oxide thin films

    International Nuclear Information System (INIS)

    Patil, R.S.; Uplane, M.D.; Patil, P.S.

    2006-01-01

    Electrosynthesis of Mo(IV) oxide thin films on F-doped SnO 2 conducting glass (10-20/Ω/□) substrates were carried from aqueous alkaline solution of ammonium molybdate at room temperature. The physical characterization of as-deposited films carried by thermogravimetric/differential thermogravimetric analysis (TGA/DTA), infrared spectroscopy and X-ray diffraction (XRD) showed the formation of hydrous and amorphous MoO 2 . Scanning electron microscopy (SEM) revealed a smooth but cracked surface with multi-layered growth. Annealing of these films in dry argon at 450 deg. C for 1 h resulted into polycrystalline MoO 2 with crystallites aligned perpendicular to the substrate. Optical absorption study indicated a direct band gap of 2.83 eV. The band gap variation consistent with Moss rule and band gap narrowing upon crystallization was observed. Structure tailoring of as-deposited thin films by thermal oxidation in ambient air to obtain electrochromic Mo(VI) oxide thin films was exploited for the first time by this novel route. The results of this study will be reported elsewhere

  12. Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties.

    Science.gov (United States)

    Dey, Arjun; Nayak, Manish Kumar; Esther, A Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A K; Bera, Parthasarathi; Barshilia, Harish C; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D Raghavendra; Sridhara, N; Sharma, Anand Kumar

    2016-11-17

    Vanadium oxide-molybdenum oxide (VO-MO) thin (21-475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V 2 O 5 , V 2 O 3 and VO 2 along with MoO 3 . Reversible or smart transition was found to occur just above the room temperature i.e., at ~45-50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10 -5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.

  13. Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition

    International Nuclear Information System (INIS)

    Baek, Jonghoon; Ma, James; Becker, Michael F.; Keto, John W.; Kovar, Desiderio

    2007-01-01

    Aluminum nitride (AlN) films were deposited using pulsed laser deposition (PLD) onto sapphire (0001) substrates with varying processing conditions (temperature, pressure, and laser fluence). We have studied the dependence of optical properties, structural properties and their correlations for these AlN films. The optical transmission spectra of the produced films were measured, and a numerical procedure was applied to accurately determine the optical constants for films of non-uniform thickness. The microstructure and texture of the films were studied using various X-ray diffraction techniques. The real part of the refractive index was found to not vary significantly with processing parameters, but absorption was found to be strongly dependent on the deposition temperature and the nitrogen pressure in the deposition chamber. We report that low optical absorption, textured polycrystalline AlN films can be produced by PLD on sapphire substrates at both low and high laser fluence using a background nitrogen pressure of 6.0 x 10 -2 Pa (4.5 x 10 -4 Torr) of 99.9% purity

  14. Multiferroic oxide thin films and heterostructures

    KAUST Repository

    Lu, Chengliang

    2015-05-26

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  15. Optical characteristics of transparent samarium oxide thin films ...

    Indian Academy of Sciences (India)

    2016-10-07

    Oct 7, 2016 ... spectra at nearly normal incident light. The estimated direct optical band gap energy (Ed g) values were found to increase by increasing the annealing temperatures. The dispersion curves of the refractive index of Sm2O3 thin films were found to obey the single oscillator model. Keywords. Transparent oxide ...

  16. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  17. Surface Chemistry of Nano-Structured Mixed Metal Oxide Films

    Science.gov (United States)

    2012-12-11

    dehydration . Steady-state reactive molecular beam scattering (RMBS) shows that dehydration is the dominant reaction pathway on clean Mo(1 1 0), while C–Mo(1 1...photoelectrochemical water oxidation performance under simulated solar irradiation of hematite (α-Fe2O3) films synthesized by coevaporation of pure Si and Fe

  18. Optical characterisation of thin film cadmium oxide prepared by a ...

    African Journals Online (AJOL)

    The optical transmission spectra of transparent conducting cadmium oxide (CdO) thin films deposited by a modified reactive evaporation process onto glass substrates have been measured. The interference fringes were used to calculate the refractive index, thickness variation, average thickness and absorption coefficient ...

  19. solution growth and characterization of copper oxide thin films ...

    African Journals Online (AJOL)

    Thin films of copper oxide (CuO) were grown on glass slides by using the solution growth technique. Copper cloride (CuCl ) and potassium telluride (K T O ) were used. Buffer 2 2e 3 solution was used as complexing agent. The solid state properties and optical properties were obtained from characterization done using PYE ...

  20. Characterization of molybdenum-doped indium oxide thin films by ...

    Indian Academy of Sciences (India)

    Abstract. In this research, indium oxide nanostructure undoped and doped with Mo were prepared on glass substrates using spray pyrolysis technique. Various parameters such as dopant concentration and deposition tem- peratures were studied. Structural properties of these films were investigated by X-ray diffraction and ...

  1. Synthesis and characterization of thermally oxidized ZnO films

    Indian Academy of Sciences (India)

    Administrator

    was investigated for some reducing gases such as acetone, methane and liquefied petroleum gas and it was observed that the films studied were selective to acetone. Keywords. Zinc oxide; structural analysis; optical parameters; electrical conductivity; gas sensitivity. 1. Introduction. In recent years, transparent conducting ...

  2. Studies on tin oxide films prepared by electron beam evaporation ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Transparent conducting tin oxide thin films have been prepared by electron beam evaporation and spray pyrolysis methods. Structural, optical and electrical properties were studied under different pre- paration conditions like substrate temperature, solution flow rate and rate of deposition. Resistivity of un-.

  3. Studies on tin oxide films prepared by electron beam evaporation ...

    Indian Academy of Sciences (India)

    Transparent conducting tin oxide thin films have been prepared by electron beam evaporation and spray pyrolysis methods. Structural, optical and electrical properties were studied under different preparation conditions like substrate temperature, solution flow rate and rate of deposition. Resistivity of undoped evaporated ...

  4. Characterization of molybdenum-doped indium oxide thin films by ...

    Indian Academy of Sciences (India)

    In this research, indium oxide nanostructure undoped and doped with Mo were prepared on glass substrates using spray pyrolysis technique. Various parameters such as dopant concentration and deposition temperatures were studied. Structural properties of these films were investigated by X-ray diffraction and scanning ...

  5. Investigation of the Carbon Monoxide Gas Sensing Characteristics of Tin Oxide Mixed Cerium Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Muhammad B. Haider

    2012-02-01

    Full Text Available Thin films of tin oxide mixed cerium oxide were grown on unheated substrates by physical vapor deposition. The films were annealed in air at 500 °C for two hours, and were characterized using X-ray photoelectron spectroscopy, atomic force microscopy and optical spectrophotometry. X-ray photoelectron spectroscopy and atomic force microscopy results reveal that the films were highly porous and porosity of our films was found to be in the range of 11.6–21.7%. The films were investigated for the detection of carbon monoxide, and were found to be highly sensitive. We found that 430 °C was the optimum operating temperature for sensing CO gas at concentrations as low as 5 ppm. Our sensors exhibited fast response and recovery times of 26 s and 30 s, respectively.

  6. Perovskite Oxide Thin Film Growth, Characterization, and Stability

    Science.gov (United States)

    Izumi, Andrew

    Studies into a class of materials known as complex oxides have evoked a great deal of interest due to their unique magnetic, ferroelectric, and superconducting properties. In particular, materials with the ABO3 perovskite structure have highly tunable properties because of the high stability of the structure, which allows for large scale doping and strain. This also allows for a large selection of A and B cations and valences, which can further modify the material's electronic structure. Additionally, deposition of these materials as thin films and superlattices through techniques such as pulsed laser deposition (PLD) results in novel properties due to the reduced dimensionality of the material. The novel properties of perovskite oxide heterostructures can be traced to a several sources, including chemical intermixing, strain and defect formation, and electronic reconstruction. The correlations between microstructure and physical properties must be investigated by examining the physical and electronic structure of perovskites in order to understand this class of materials. Some perovskites can undergo phase changes due to temperature, electrical fields, and magnetic fields. In this work we investigated Nd0.5Sr 0.5MnO3 (NSMO), which undergoes a first order magnetic and electronic transition at T=158K in bulk form. Above this temperature NSMO is a ferromagnetic metal, but transitions into an antiferromagnetic insulator as the temperature is decreased. This rapid transition has interesting potential in memory devices. However, when NSMO is deposited on (001)-oriented SrTiO 3 (STO) or (001)-oriented (LaAlO3)0.3-(Sr 2AlTaO6)0.7 (LSAT) substrates, this transition is lost. It has been reported in the literature that depositing NSMO on (110)-oriented STO allows for the transition to reemerge due to the partial epitaxial growth, where the NSMO film is strained along the [001] surface axis and partially relaxed along the [11¯0] surface axis. This allows the NSMO film enough

  7. Effect of aluminum plasma parameters on the physical properties of Ti-Al-N thin films deposited by reactive crossed beam pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Escobar-Alarcón, L., E-mail: luis.escobar@inin.gob.mx [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, México DF 11801 (Mexico); Solís-Casados, D.A. [Centro Conjunto de Investigación en Química Sustentable UAEM-UNAM, Carretera Toluca-Atlacomulco Km 14.5, Unidad San Cayetano, Toluca, Estado de México 50200 (Mexico); Romero, S. [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, México DF 11801 (Mexico); Fernández, M. [Departamento de Aceleradores, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, México DF 11801 (Mexico); Pérez-Álvarez, J. [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, México DF 11801 (Mexico); Centro Conjunto de Investigación en Química Sustentable UAEM-UNAM, Carretera Toluca-Atlacomulco Km 14.5, Unidad San Cayetano, Toluca, Estado de México 50200 (Mexico); Haro-Poniatowski, E. [Departamento de Física, Universidad Autónoma Metropolitana Iztapalapa, Apdo. Postal 55-534, México DF (Mexico)

    2013-10-15

    This work reports on the preparation and characterization of Ti-Al-N thin films deposited by reactive crossed beam pulsed laser deposition (RCBPLD). The elemental composition, vibrational properties and hardness of the deposited films were investigated as a function of the plasma parameters, that is, the Al{sup +} mean kinetic energy and plasma density. The composition of the thin films was determined from X-ray photoelectron spectroscopy (XPS) measurements as well as by Rutherford backscattering spectroscopy (RBS). The structural modifications of the deposited materials due to Al incorporation were characterized by Raman spectroscopy. The hardness of the deposited films was determined by nanoindentation. It was found that by using this experimental configuration the aluminum content in the deposited films was incorporated in a controlled way, from 2.2 to 31.7 at.% (XPS measurements), by varying the Al{sup +} mean kinetic energy and the plasma density. Raman results suggest that at low aluminum concentrations a solid solution of Ti(Al, N) is produced, whereas at higher aluminum concentrations a nanocomposite formed of TiAlN and AlN is obtained. Ti-Al-N films with hardnesses up to 28.8 GPa, which are suitable for many mechanical applications, were obtained. These results show that the properties of the deposited material are controlled, at least partially, by the aluminum plasma parameters used for thin film growth.

  8. Ferroelectric thin films using oxides as raw materials

    Directory of Open Access Journals (Sweden)

    E.B. Araújo

    1999-01-01

    Full Text Available This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD, Scanning Electron Microscopy (SEM, Infrared Spectroscopy (IR and Rutherford Backscattering Spectroscopy (RBS. The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.

  9. Organic thin film transistors with indium tin oxide bottom electrode

    International Nuclear Information System (INIS)

    Han, Chang-Wook; Shin, Hee-Sun; Park, Joong-Hyun; Han, Min-Koo; Pang, Hee-Suk; Kim, Ki-Yong; Chung, In-Jae; Pyo, Sang-Woo; Lee, Dong-Hyun; Kim, Young-Kwan

    2006-01-01

    Organic thin film transistors (OTFTs) which employ indium tin oxide (ITO) as source and drain electrodes instead of gold are fabricated. A double gate dielectric layer was used, which consists of benzocyclobutane (BCB) and silicon nitride (SiN x ). The pentacene TFT has lateral dimensions 192 μmx6 μm. The OTFT with the ITO bottom electrode shows a saturation mobility of 0.05∼0.09 cm 2 V -1 s -1 and an on-off current ratio of the order of 10 5 in a gate voltage span between 0 and -40 V. The TFT fabrication process steps had the beneficial side effect of changing the ITO surface from hydrophilic to hydrophobic. This change allows pentacene films with larger grains, observed up to 0.5 μm, to be grown on TFT compared to as-deposited ITO film onto which high quality films cannot be grown

  10. Structural transformation of nickel hydroxide films during anodic oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Crocker, Robert W. [Univ. of California, Berkeley, CA (United States); Muller, Rolf H. [Univ. of California, Berkeley, CA (United States)

    1992-05-01

    The transformation of anodically formed nickel hydroxide/oxy-hydroxide electrodes has been investigated. A mechanism is proposed for the anodic oxidation reaction, in which the reaction interface between the reduced and oxidized phases of the electrode evolves in a nodular topography that leads to inefficient utilization of the active electrode material. In the proposed nodular transformation model for the anodic oxidation reaction, nickel hydroxide is oxidized to nickel oxy-hydroxide in the region near the metal substrate. Since the nickel oxy-hydroxide is considerably more conductive than the surrounding nickel hydroxide, as further oxidation occurs, nodular features grow rapidly to the film/electrolyte interface. Upon emerging at the electrolyte interface, the reaction boundary between the nickel hydroxide and oxy-hydroxide phases spreads laterally across the film/electrolyte interface, creating an overlayer of nickel oxy-hydroxide and trapping uncharged regions of nickel hydroxide within the film. The nickel oxy-hydroxide overlayer surface facilitates the oxygen evolution side reaction. Scanning tunneling microscopy of the electrode in its charged state revealed evidence of 80 - 100 Angstrom nickel oxy-hydroxide nodules in the nickel hydroxide film. In situ spectroscopic ellipsometer measurements of films held at various constant potentials agree quantitatively with optical models appropriate to the nodular growth and subsequent overgrowth of the nickel oxy-hydroxide phase. A two-dimensional, numerical finite difference model was developed to simulate the current distribution along the phase boundary between the charged and uncharged material. The model was used to explore the effects of the physical parameters that govern the electrode behavior. The ratio of the conductivities of the nickel hydroxide and oxy-hydroxide phases was found to be the dominant parameter in the system.

  11. Structural transformation of nickel hydroxide films during anodic oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Crocker, R.W.; Muller, R.H.

    1992-05-01

    The transformation of anodically formed nickel hydroxide/oxy-hydroxide electrodes has been investigated. A mechanism is proposed for the anodic oxidation reaction, in which the reaction interface between the reduced and oxidized phases of the electrode evolves in a nodular topography that leads to inefficient utilization of the active electrode material. In the proposed nodular transformation model for the anodic oxidation reaction, nickel hydroxide is oxidized to nickel oxy-hydroxide in the region near the metal substrate. Since the nickel oxy-hydroxide is considerably more conductive than the surrounding nickel hydroxide, as further oxidation occurs, nodular features grow rapidly to the film/electrolyte interface. Upon emerging at the electrolyte interface, the reaction boundary between the nickel hydroxide and oxy-hydroxide phases spreads laterally across the film/electrolyte interface, creating an overlayer of nickel oxy-hydroxide and trapping uncharged regions of nickel hydroxide within the film. The nickel oxy-hydroxide overlayer surface facilitates the oxygen evolution side reaction. Scanning tunneling microscopy of the electrode in its charged state revealed evidence of 80 {endash} 100 Angstrom nickel oxy-hydroxide nodules in the nickel hydroxide film. In situ spectroscopic ellipsometer measurements of films held at various constant potentials agree quantitatively with optical models appropriate to the nodular growth and subsequent overgrowth of the nickel oxy-hydroxide phase. A two-dimensional, numerical finite difference model was developed to simulate the current distribution along the phase boundary between the charged and uncharged material. The model was used to explore the effects of the physical parameters that govern the electrode behavior. The ratio of the conductivities of the nickel hydroxide and oxy-hydroxide phases was found to be the dominant parameter in the system.

  12. Effect of friction-induced deformation and oxidation on the structure and microhardness of surface aluminum and silumin layers

    Science.gov (United States)

    Korshunov, L. G.; Chernenko, N. L.; Brodova, I. G.; Shirinkina, I. G.

    2017-11-01

    Metallography, electron microscopy, and X-ray diffraction have been used to investigate structural transformations that take place in a 10-μm-thick surface layer in aluminum and Al-17% Si alloy under conditions of sliding friction and subsequent oxidation at 100 and 200°C for 1 h. Friction-induced deformation has been carried out at room temperature in air and at-196°C in liquid nitrogen by reciprocating sliding of a cylindrical indenter made of cubic boron nitride at a rate of 0.014 m/s and a load of 98 N. It is shown that deformation under these conditions forms nanocrystalline structures in the surface layer in aluminum and Al-17% Si alloy and increases their microhardness by a factor of 1.8-3.5. A high contact deformation and a high affinity of oxygen to aluminum and silicon cause the formation of anomalously supersaturated solid solutions of oxygen in aluminum and silicon in the surface layer of the alloy during friction. Oxidation at 100°C (1 h) of the deformed Al-17% Si alloy increases its microhardness due to the decomposition of anomalously supersaturated solid solutions of oxygen in aluminum and silicon and the formation of their oxides.

  13. Albumin adsorption on oxide thin films studied by spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Silva-Bermudez, P., E-mail: suriel21@yahoo.com [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n, C.U., 04510, Mexico D.F. (Mexico); Unidad de Posgrado, Facultad de Odontologia, Universidad Nacional Autonoma de Mexico, CU, 04510, Mexico D.F. (Mexico); Rodil, S.E.; Muhl, S. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior s/n, C.U., 04510, Mexico D.F. (Mexico)

    2011-12-15

    Thin films of tantalum, niobium, zirconium and titanium oxides were deposited by reactive magnetron sputtering and their wettability and surface energy, optical properties, roughness, chemical composition and microstructure were characterized using contact angle measurements, spectroscopic ellipsometry, profilometry, X-ray photoelectron spectroscopy and X-ray diffraction, respectively. The purpose of the work was to correlate the surface properties of the films to the Bovine Serum Albumin (BSA) adsorption, as a first step into the development of an initial in vitro test of the films biocompatibility, based on standardized protein adsorption essays. The films were immersed into BSA solutions with different protein concentrations and protein adsorption was monitored in situ by dynamic ellipsometry; the adsorption-rate was dependent on the solution concentration and the immersion time. The overall BSA adsorption was studied in situ using spectroscopic ellipsometry and it was found to be influenced by the wettability of the films; larger BSA adsorption occurred on the more hydrophobic surface, the ZrO{sub 2} film. On the Ta{sub 2}O{sub 5}, Nb{sub 2}O{sub 5} and TiO{sub 2} films, hydrophilic surfaces, the overall BSA adsorption increased with the surface roughness or the polar component of the surface energy.

  14. Memristive Properties of Thin Film Cuprous Oxide

    Science.gov (United States)

    2011-03-01

    transition metal-oxide, or semiconductor material. On a macroscopic scale, such a metal/insulator/metal (MIM) system describes a capacitor. The dielectric... semiconductor . 5 The I-V relationship is characterized first by a linear region of high resistance, followed by a region where the relationship is...oxide ( CuO ) is around 1.2eV or 1034nm [15]; no noticeable features were seen in that range. The peaks around 470nm and 330nm have also been reported

  15. Low-temperature aluminum reduction of graphene oxide, electrical properties, surface wettability, and energy storage applications.

    Science.gov (United States)

    Wan, Dongyun; Yang, Chongyin; Lin, Tianquan; Tang, Yufeng; Zhou, Mi; Zhong, Yajuan; Huang, Fuqiang; Lin, Jianhua

    2012-10-23

    Low-temperature aluminum (Al) reduction is first introduced to reduce graphene oxide (GO) at 100-200 °C in a two-zone furnace. The melted Al metal exhibits an excellent deoxygen ability to produce well-crystallized reduced graphene oxide (RGO) papers with a low O/C ratio of 0.058 (Al-RGO), compared with 0.201 in the thermally reduced one (T-RGO). The Al-RGO papers possess outstanding mechanical flexibility and extremely high electrical conductivities (sheet resistance R(s) ~ 1.75 Ω/sq), compared with 20.12 Ω/sq of T-RGO. More interestingly, very nice hydrophobic nature (90.5°) was observed, significantly superior to the reported chemically or thermally reduced papers. These enhanced properties are attributed to the low oxygen content in the RGO papers. During the aluminum reduction, highly active H atoms from H(2)O reacted with melted Al promise an efficient oxygen removal. This method was also applicable to reduce graphene oxide foams, which were used in the GO/SA (stearic acid) composite as a highly thermally conductive reservoir to hold the phase change material for thermal energy storage. The Al-reduced RGO/SnS(2) composites were further used in an anode material of lithium ion batteries possessing a higher specific capacity. Overall, low-temperature Al reduction is an effective method to prepare highly conductive RGO papers and related composites for flexible energy conversion and storage device applications.

  16. Silicon nanocrystals embedded in oxide films grown by magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Caroline Bonafos

    2016-05-01

    Full Text Available This paper presents a comparison of the results that we obtained and reported over the last few years on the structural, optical and light emitting properties of Si-SiO2 and Si-Al2O3 films that were fabricated using a specific configuration of RF magnetron sputtering. In these films the Si volume fraction, x, varies along the film (which is typically 14 cm long from a value of ~0.1 at one end to ~0.9 at the other end. For the films with x > 0.3, the formation of amorphous Si clusters was observed in as-deposited Si-SiO2 and Si-Al2O3 films. Si nanocrystals (Si-ncs were generated by high-temperature annealing of the films in nitrogen atmosphere. We found that two processes can contribute to the Si-ncs formation: (i the crystallization of the existing amorphous Si inclusions in the as-deposited films, and (ii the thermally stimulated phase separation. Process (i can be responsible for the independence of Si-ncs mean sizes on x in annealed films with x > 0.5. At the same time, difference in the structural and the light emitting properties of the two types of films was observed. For the samples of the same x, the Si-ncs embedded in the Al2O3 host were found to be larger than the Si-ncs in the SiO2 host. This phenomenon can be explained by the lower temperature required for phase separation in Si-Al2O3 or by the lower temperature of the crystallization of Si-ncs in alumina. The latter suggestion is supported by Raman scattering and electron paramagnetic resonance spectra. In contrast with the Si-SiO2, the Si-ncs embedded in Si-Al2O3 films were found to be under tensile stress. This effect was explained by the strains at the interfaces between the film and silica substrate as well as between the Si inclusions and the Al2O3 host. It was also shown that exciton recombination in Si-ncs is the dominant radiative channel in Si-SiO2 films, while the emission from the oxide defects dominates in Si-Al2O3 films. This can be due to the high number of non

  17. High Q micro-ring resonators fabricated from polycrystalline aluminum nitride films for near infrared and visible photonics.

    Science.gov (United States)

    Pernice, Wolfram H P; Xiong, Chi; Tang, Hong X

    2012-05-21

    We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrated waveguides and realize high-quality optical resonators. In the telecoms C-band (1520-1580 nm), we obtain the highest optical Q factor of 440,000. Critical coupled devices show extinction ratio above 30 dB. For visible wavelengths (around 770 nm), intrinsic quality factors in excess of 30,000 is demonstrated. Our work illustrates the potential of AlN as a low loss material for wideband optical applications.

  18. Electron spin resonance of thin films of organic light-emitting material tris(8-hydroxyquinoline) aluminum doped by magnesium

    OpenAIRE

    Son, Donghyun; Marumoto, Kazuhiro; Kizuka, Tokushi; Shimoi, Yukihiro

    2012-01-01

    We have successfully observed electron spin resonance (ESR) signals of radical anions in thin films of tris(8-hydroxyquinoline) aluminum (Alq3), a compound widely used as electron transporting and luminescent layers in organic light-emitting diodes. To obtain definitely defined radical-anion states in Alq3, we doped Alq3 with Mg by co-evaporating these materials. The obtained g value and peak-to-peak ESR linewidth ΔHpp of Alq3 radical anions are 2.0030 and 2.19 mT, respectively. Theoretical g...

  19. Synergistic effect of aluminum and ionizing radiation upon ultrastructure, oxidative stress and apoptotic alterations in Paneth cells of rat intestine.

    Science.gov (United States)

    Eltahawy, N A; Elsonbaty, S M; Abunour, S; Zahran, W E

    2017-03-01

    Environmental and occupational exposure to aluminum along with ionizing radiation results in serious health problems. This study was planned to investigate the impact of oxidative stress provoked by exposure to ionizing radiation with aluminum administration upon cellular ultra structure and apoptotic changes in Paneth cells of rat small intestine . Animals received daily aluminum chloride by gastric gavage at a dose 0.5 mg/Kg BW for 4 weeks. Whole body gamma irradiation was applied at a dose 2 Gy/week up to 8 Gy. Ileum malondialdehyde, advanced oxidative protein products, protein carbonyl and tumor necrosis factor-alpha were assessed as biomarkers of lipid peroxidation, protein oxidation and inflammation respectively along with superoxide dismutase, catalase, and glutathione peroxidase activities as enzymatic antioxidants. Moreover, analyses of cell cycle division and apoptotic changes were evaluated by flow cytometry. Intestinal cellular ultra structure was investigated using transmission electron microscope.Oxidative and inflammatory stresses assessment in the ileum of rats revealed that aluminum and ionizing radiation exposures exhibited a significant effect upon the increase in oxidative stress biomarkers along with the inflammatory marker tumor necrosis factor-α accompanied by a significant decreases in the antioxidant enzyme activities. Flow cytometric analyses showed significant alterations in the percentage of cells during cell cycle division phases along with significant increase in apoptotic cells. Ultra structurally, intestinal cellular alterations with marked injury in Paneth cells at the sites of bacterial translocation in the crypt of lumens were recorded. The results of this study have clearly showed that aluminum and ionizing radiation exposures induced apoptosis with oxidative and inflammatory disturbance in the Paneth cells of rat intestine, which appeared to play a major role in the pathogenesis of cellular damage. Furthermore, the

  20. Mitoprotective effect of Centella asiatica against aluminum-induced neurotoxicity in rats: possible relevance to its anti-oxidant and anti-apoptosis mechanism.

    Science.gov (United States)

    Prakash, Atish; Kumar, Anil

    2013-08-01

    Role of mitochondrial dysfunction and oxidative stress has been well documented in various cognitive-related disorders such as Alzheimer's disease. Aluminum is a neurotoxic metal that may be involved in the progression of neurodegenerative processes. The antioxidant and memory enhancing effects of Centella asiatica (CA) are well known in the last few decades. Therefore, the present study has been designed to explore the neuroprotective effect of CA on chronic aluminum exposure induced mitochondrial enzyme alteration, oxidative stress, apoptosis and cognitive dysfunction in rat. Aluminum (100 mg/kg) and CA (150 and 300 mg/kg) were administered daily for a period of 6 weeks in male Wistar rats. Various behavioral, biochemical and cellular estimations and aluminum concentration were assessed. Chronic aluminum administration resulted in memory impairment and caused marked oxidative damage associated with mitochondria impairment. It also caused a significant increase in caspase-3 activity, acetylcholine esterase activity and aluminum concentration in hippocampus and cerebral cortex of rat brain. Chronic administration of CA significantly improved memory performance, oxidative defense decreased aluminum concentration, caspase-3, acetylcholinestrease activity and reversal of mitochondrial enzyme activity as compared to aluminum-treated animals. Results of the study demonstrate neuroprotective potential of CA against aluminum-induced cognitive dysfunction and mito- oxidative damage.

  1. Photoassisted oxidation of oil films on water

    Energy Technology Data Exchange (ETDEWEB)

    Heller, A.; Brock, J.R.

    1991-08-01

    The objective of the project is to develop TiO{sub 2}-based photocatalysts for the solar assisted oxidative dissolution of oil slicks. In a TiO{sub 2} crystal, absorption of a photon generates an electron-hole pair. The electron reacts with surface-adsorbed oxygen, reducing it to hydrogen peroxide; the hole directly oxidizes adsorbed organic compounds, usually via an intermediate OH radical. Since the density of TiO{sub 2} (3.8g/cc for anatase, 4.3 g/cc for rutile) is greater than that of either oil or seawater, TiO{sub 2} crystals are attached to inexpensive, engineered hollow glass microspheres to ensure flotation on the oil slick surface. Portions of the microsphere surface not covered by TiO{sub 2} are made oleophilic so that the microbeads will be preferentially attracted to the oil-air interface.

  2. Preparation and characterization of properties of electrodeposited copper oxide films

    Science.gov (United States)

    Wang, Longcheng

    Copper oxides, including cuprous oxide and cupric oxide, are prepared by electrochemical deposition. The structural, optical and electrical properties of as-deposited copper oxides are evaluated, based on which cuprous oxide is selected as a promising material for photovoltaic applications. Electrodeposited cuprous oxide is a p-type semiconductor with a direct band gap of 2.06 eV. The mechanism of how pH affects the structural and electrical properties of electrodeposited cuprous oxide films is studied. In the pH range of 7.5 to 12.0, there are three different preferred crystal orientations: (100), (110) and (111). With different orientations, cuprous oxide shows different surface morphology and grain size. Bath pH effect on structural properties is explained by its effect on the growth rate of different crystallographic planes with different Cu+/O2- ratios. Capacitance-voltage measurements are performed to study electrical properties of differently oriented cuprous oxide films. The results show that the flat band potential shifts negatively as the bath pH increases. Electrodeposited cupric oxide is a p-type cupric oxide with an indirect band gap of 1.32 eV. Different cleaning methods are used to clean the substrate surface for electrodeposition of cupric oxide. Electrochemical etching is proven to be an effective method for Cu substrate cleaning in cupric oxide deposition. In particular, in-situ electrochemical etching is developed, which prevents the cleaned substrate from exposure to air. Current-voltage characterization shows that cupric oxide deposited on electrochemically etched Cu substrates has favorable electrical properties and better rectification behavior. Cuprous oxide is selected for the fabrication of p-n homo-junction because it has better crystallinity, bigger grains, better control over crystal quality and a direct band gap. Based on the model that bath pH can control the stoichiometry and native point defects in electrodeposited cuprous oxide

  3. Efficient indium-tin-oxide free inverted organic solar cells based on aluminum-doped zinc oxide cathode and low-temperature aqueous solution processed zinc oxide electron extraction layer

    International Nuclear Information System (INIS)

    Chen, Dazheng; Zhang, Chunfu; Wang, Zhizhe; Zhang, Jincheng; Tang, Shi; Wei, Wei; Sun, Li; Hao, Yue

    2014-01-01

    Indium-tin-oxide (ITO) free inverted organic solar cells (IOSCs) based on aluminum-doped zinc oxide (AZO) cathode, low-temperature aqueous solution processed zinc oxide (ZnO) electron extraction layer, and poly(3-hexylthiophene-2, 5-diyl):[6, 6]-phenyl C 61 butyric acid methyl ester blend were realized in this work. The resulted IOSC with ZnO annealed at 150 °C shows the superior power conversion efficiency (PCE) of 3.01%, if decreasing the ZnO annealing temperature to 100 °C, the obtained IOSC also shows a PCE of 2.76%, and no light soaking issue is observed. It is found that this ZnO film not only acts as an effective buffer layer but also slightly improves the optical transmittance of AZO substrates. Further, despite the relatively inferior air-stability, these un-encapsulated AZO/ZnO IOSCs show comparable PCEs to the referenced ITO/ZnO IOSCs, which demonstrates that the AZO cathode is a potential alternative to ITO in IOSCs. Meanwhile, this simple ZnO process is compatible with large area deposition and plastic substrates, and is promising to be widely used in IOSCs and other relative fields.

  4. Spray Pyrolyzed Polycrystalline Tin Oxide Thin Film as Hydrogen Sensor

    OpenAIRE

    Ganesh E. Patil; D. D. Kajale; D. N. Chavan; N. K. Pawar; V. B. Gaikwad; G. H. Jain

    2010-01-01

    Polycrystalline tin oxide (SnO2) thin film was prepared by using simple and inexpensive spray pyrolysis technique (SPT). The film was characterized for their phase and morphology by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The crystallite size calculated from the XRD pattern is 84 nm. Conductance responses of the polycrystalline SnO2 were measured towards gases like hydrogen (H2), liquefied petroleum gas (LPG), ethanol vapors (C2H5OH), NH3, CO, CO2, Cl2 an...

  5. Nanoporous zinc oxide films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Ghimpu, L.; Lupan, O.; Popescu, L.; Tiginyanu, I.M.

    2011-01-01

    In this paper we demonstrate an inexpensive approach for the fabrication of nanoporous zinc oxide films by using magnetron sputtering. Study of the structural properties proves the crystallographic perfection of porous nanostructures and the possibility of its controlling by adjusting the technological parameters in the growth process. The XRD pattern of nanoporous ZnO films exhibits high intensity of the peaks relative to the background signal which is indicative of the ZnO hexagonal phase and a good crystallinity of the samples grown by magnetron sputtering.

  6. Obtaining and Investigating Amphoteric Properties of Aluminum Oxide in a Hands-On Laboratory Experiment for High School Students

    Science.gov (United States)

    Orwat, Kinga; Bernard, Pawel; Migdal-Mikuli, Anna

    2016-01-01

    The aim of this laboratory exercise is to present a high school hands-on laboratory experiment, focused on obtaining and investigating the properties of various polymorphic forms of aluminum oxide. Amphoterism plays a key role when discussing the law of periodicity and periodic changes of acid-base properties of elements and their compounds. In…

  7. Investigation and characterization of oxidized cellulose and cellulose nanofiber films

    Science.gov (United States)

    Yang, Han

    Over the last two decades, a large amount of research has focused on natural cellulose fibers, since they are "green" and renewable raw materials. Recently, nanomaterials science has attracted wide attention due to the large surface area and unique properties of nanoparticles. Cellulose certainly is becoming an important material in nanomaterials science, with the increasing demand of environmentally friendly materials. In this work, a novel method of preparing cellulose nanofibers (CNF) is being presented. This method contains up to three oxidation steps: periodate, chlorite and TEMPO (2,2,6,6-tetramethylpiperidinyl-1-oxyl) oxidation. The first two oxidation steps are investigated in the first part of this work. Cellulose pulp was oxidized to various extents by a two step-oxidation with sodium periodate, followed by sodium chlorite. The oxidized products can be separated into three different fractions. The mass ratio and charge content of each fraction were determined. The morphology, size distribution and crystallinity index of each fraction were measured by AFM, DLS and XRD, respectively. In the second part of this work, CNF were prepared and modified under various conditions, including (1) the introduction of various amounts of aldehyde groups onto CNF by periodate oxidation; (2) the carboxyl groups in sodium form on CNF were converted to acid form by treated with an acid type ion-exchange resin; (3) CNF were cross-linked in two different ways by employing adipic dihydrazide (ADH) as cross-linker and water-soluble 1-ethyl-3-[3-(dimethylaminopropyl)] carbodiimide (EDC) as carboxyl-activating agent. Films were fabricated with these modified CNF suspensions by vacuum filtration. The optical, mechanical and thermo-stability properties of these films were investigated by UV-visible spectrometry, tensile test and thermogravimetric analysis (TGA). Water vapor transmission rates (WVTR) and water contact angle (WCA) of these films were also studied.

  8. Compositional analysis of silicon oxide/silicon nitride thin films

    Directory of Open Access Journals (Sweden)

    Meziani Samir

    2016-06-01

    Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

  9. Electronic properties of thermally formed thin iron oxide films

    International Nuclear Information System (INIS)

    Wielant, J.; Goossens, V.; Hausbrand, R.; Terryn, H.

    2007-01-01

    The oxide layer, present between an organic coating and the substrate, guarantees adhesion of the coating and plays a determinating role in the delamination rate of the organic coating. The purpose of this study is to compare the resistive and semiconducting properties of thermal oxides formed on steel in two different atmospheres at 250 deg. C: an oxygen rich atmosphere, air, and an oxygen deficient atmosphere, N 2 . In N 2 , a magnetite layer grows while in air a duplex oxide film forms composed by an inner magnetite layer and a thin outer hematite scale. The heat treatment for different amounts of time at high temperature was used as method to sample the thickness variation and change in electronic and semiconducting properties of the thermal oxide layers. Firstly, linear voltammetric measurements were performed to have a first insight in the electrochemical behavior of the thermal oxides in a borate buffer solution. Electrochemical impedance spectroscopy in the same buffer combined with the Mott-Schottky analysis were used to determine the semiconducting properties of the thermal oxides. By spectroscopic ellipsometry (SE) and atomic force microscopy (AFM), respectively, the thickness and roughness of the oxide layers were determined supporting the physical interpretation of the voltammetric and EIS data. These measurements clearly showed that oxide layers with different constitution, oxide resistance, flatband potential and doping concentration can be grown by changing the atmosphere

  10. Growth and thermal oxidation of Ru and ZrO2 thin films as oxidation protective layers

    NARCIS (Netherlands)

    Coloma Ribera, R.

    2017-01-01

    This thesis focuses on the study of physical and chemical processes occurring during growth and thermal oxidation of Ru and ZrO2 thin films. Acting as oxidation resistant capping materials to prevent oxidation of layers underneath, these films have several applications, i.e., in microelectronics

  11. Anodized Aluminum Oxide Templated Synthesis of Metal-Organic Frameworks Used as Membrane Reactors.

    Science.gov (United States)

    Yu, Yifu; Wu, Xue-Jun; Zhao, Meiting; Ma, Qinglang; Chen, Junze; Chen, Bo; Sindoro, Melinda; Yang, Jian; Han, Shikui; Lu, Qipeng; Zhang, Hua

    2017-01-09

    The incorporation of metal-organic frameworks (MOFs) into membrane-shaped architectures is of great importance for practical applications. The currently synthesized MOF-based membranes show many disadvantages, such as poor compatibility, low dispersity, and instability, which severely limit their utility. Herein, we present a general, facile, and robust approach for the synthesis of MOF-based composite membranes through the in situ growth of MOF plates in the channels of anodized aluminum oxide (AAO) membranes. After being used as catalysis reactors, they exhibit high catalytic performance and stability in the Knoevenagel condensation reaction. The high catalytic performance might be attributed to the intrinsic structure of MOF-based composite membranes, which can remove the products from the reaction zone quickly, and prevent the aggregation and loss of catalysts during reaction and recycling process. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Europium-doped aluminum oxide phosphors as indicators for frontal polymerization dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Carranza, Arturo; Gewin, Mariah; Pojman, John A., E-mail: japojman@lsu.edu [Department of Chemistry, Louisiana State University, Baton Rouge, Louisiana 70803-1804 (United States)

    2014-06-15

    In this study, we present an inexpensive and practical method that allows the monitoring and visualization of front polymerization, propagation, and dynamics. Commercially available europium-doped aluminum oxide powders were combined with video imaging to visualize free-radical propagating polymer fronts. In order to demonstrate the applicability of this method, frontal copolymerization reactions of propoxylated glycerin triacrylate (EB53), pentaerythritol triacrylate (PETA), and pentaerythritol tetra-acrylate (PETEA) with 1,1-Bis(tert-butylperoxy)-3,3,5-trimethylcyclohexane (Luperox 231®) as an initiator were studied and compared to the results obtained by IR imaging. Systems exhibiting higher filler loading, higher EB53 content, and less acrylated monomers showed a marked decrease in front velocity, while those with more acrylated monomers and higher crosslinking density showed a marked increase in front velocity. Finally, in order to show the potential of the imaging technique, we studied fronts propagating in planar and spherical geometries.

  13. Europium-doped aluminum oxide phosphors as indicators for frontal polymerization dynamics.

    Science.gov (United States)

    Carranza, Arturo; Gewin, Mariah; Pojman, John A

    2014-06-01

    In this study, we present an inexpensive and practical method that allows the monitoring and visualization of front polymerization, propagation, and dynamics. Commercially available europium-doped aluminum oxide powders were combined with video imaging to visualize free-radical propagating polymer fronts. In order to demonstrate the applicability of this method, frontal copolymerization reactions of propoxylated glycerin triacrylate (EB53), pentaerythritol triacrylate (PETA), and pentaerythritol tetra-acrylate (PETEA) with 1,1-Bis(tert-butylperoxy)-3,3,5-trimethylcyclohexane (Luperox 231®) as an initiator were studied and compared to the results obtained by IR imaging. Systems exhibiting higher filler loading, higher EB53 content, and less acrylated monomers showed a marked decrease in front velocity, while those with more acrylated monomers and higher crosslinking density showed a marked increase in front velocity. Finally, in order to show the potential of the imaging technique, we studied fronts propagating in planar and spherical geometries.

  14. Hydrogenation of Levulinic Acid over Nickel Catalysts Supported on Aluminum Oxide to Prepare γ-Valerolactone

    Directory of Open Access Journals (Sweden)

    Jie Fu

    2015-12-01

    Full Text Available Four types of nickel catalysts supported on aluminum oxide (Ni/Al2O3 with different nickel loadings were synthesized using the co-precipitation method and were used for the hydrogenation of levulinic acid (LA to prepare γ-valerolactone (GVL. The synthesized Ni/Al2O3 catalysts exhibited excellent catalytic activity in dioxane, and the activity of the catalysts was excellent even after being used four times in dioxane. The catalytic activity in dioxane as a solvent was found to be superior to the activity in water. Nitrogen physisorption, X-ray diffraction, and transmission electron microscopy were employed to characterize the fresh and used catalysts. The effects of the nickel loading, temperature, hydrogen pressure, and substrate/catalyst ratio on the catalytic activity were investigated.

  15. Quench of molten aluminum oxide associated with in-vessel debris retention by RPV internal water

    International Nuclear Information System (INIS)

    Maruyama, Yu; Yamano, Norihiro; Moriyama, Kiyofumi; Park, Hyun Sun; Kudo, Tamotsu; Yang, Yanhua; Sugimoto, Jun

    1999-01-01

    In-vessel debris coolability experiments were performed in ALPHA program at JAERI. Molten aluminum oxide (Al 2 O 3 ) was poured into a pool of water in a lower head experimental vessel. Post-test observation and measurement using an ultrasonic technique indicated the formation of the interfacial gap between the solidified Al 2 O 3 and the vessel wall. Thermal responses of the vessel wall implied that the interfacial gap acted initially as a thermal resistance and water subsequently penetrated into the interfacial gap. The maximum heat flux at the inner surface of the vessel facing to the solidified Al 2 O 3 was roughly evaluated to be ranged from 320 kW/m 2 to 600 kW/m 2 . A post-test analysis was conducted with CAMP code. The influence of the interfacial gap on thermal behavior of Al 2 O 3 and the vessel wall was examined. (authors)

  16. Oxidative Esterification of Aldehydes with Urea Hydrogen Peroxide Catalyzed by Aluminum Chloride Hexahydrate

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sin-Ae; Kim, Yoon Mi; Lee, Jong Chan [Chung-Ang University, Seoul (Korea, Republic of)

    2016-08-15

    We have developed a new, environmentally benign and highly efficient oxidative preparation of methyl esters by the reaction of various aldehydes with UHP in methanol catalyzed by readily accessible aluminum(III) chloride hexahydrate. This new greener and cost effective direct esterification method can serve as a useful alternative to existing protocols. Esters are some of the most important functional groups in organic chemistry and have been found in the sub-structure of a variety of natural products, industrial chemicals, and pharmaceuticals. Numerous methods have been reported for the preparation of various esters. In particular, this method gives low yields for both aldehydes containing electron donating substituents in aromatic rings and heterocyclic aldehydes. Therefore, development of a more general, efficient, and greener protocol for the esterification of aldehydes with readily available catalyst is still desirable.

  17. The optical constants of several atmospheric aerosol species - Ammonium sulfate, aluminum oxide, and sodium chloride

    Science.gov (United States)

    Toon, O. B.; Pollack, J. B.; Khare, B. N.

    1976-01-01

    An investigation is conducted of problems which are related to a use of measured optical constants in the simulation of the optical constants of real atmospheric aerosols. The techniques of measuring optical constants are discussed, taking into account transmission measurements through homogeneous and inhomogeneous materials, the immersion of a material in a liquid of a known refractive index, the consideration of the minimum deviation angle of prism measurement, the interference of multiply reflected light, reflectivity measurements, and aspects of mathematical analysis. Graphs show the real and the imaginary part of the refractive index as a function of wavelength for aluminum oxide, NaCl, and ammonium sulfate. Tables are provided for the dispersion parameters and the optical constants.

  18. Oxide films in laser additive manufactured Inconel 718

    International Nuclear Information System (INIS)

    Zhang, Y.N.; Cao, X.; Wanjara, P.; Medraj, M.

    2013-01-01

    A continuous-wave 5 kW fiber laser welding system was used in conduction mode to deposit Inconel® alloy 718 (IN718) by employing filler wire on as-serviced IN718 parent material (PM) substrates. The direct laser deposited (DLD) coupons and as-serviced IN718 PM were then evaluated through tensile testing. To understand the failure mechanisms, the tensile fracture surfaces of the as-serviced IN718 PM, DLD and DLD-PM samples were analyzed using scanning electron microscopy. The fracture surfaces revealed the presence of both Al 2 O 3 and Cr 2 O 3 films, although the latter was reasoned to be the main oxide in IN718. Both the experimental observations and thermodynamic analysis indicated that oxidation of some alloying elements in IN718 cannot be completely avoided during manufacturing, whether in the liquid state under vacuum (for casting, the electron beam melting, welding and/or deposition) or with inert gas protection (for welding or laser deposition). The exposed surface of the oxide film on the fracture surface has poor wetting with the metal and thus can constitute a lack of bonding or a crack with either the metal and/or another non-wetted side of the oxide film. On the other hand, the wetted face of the oxide film has good atom-to-atom contact with the metal and may nucleate some intermetallic compounds, such as Laves, Ni 3 Nb-δ, Nb-rich MC and γ′ compounds. The potential of their nucleation on Cr 2 O 3 was assessed using planar disregistry. Coherent planes were found between these intermetallics and Cr 2 O 3

  19. Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Gyu-bong Cho

    2014-01-01

    Full Text Available LiNiO2 thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2 thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4 oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2 thin film. The ZrO2-coated LiNiO2 thin film provided an improved discharge capacity compared to bare LiNiO2 thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2 coating layer.

  20. Zinc oxide doped graphene oxide films for gas sensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Chetna,, E-mail: chetna2288@gmail.com; Kumar, Shani; Chaudhary, S.; Kapoor, A. [Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi-110021 (India); Garg, A.; Chowdhuri, A.; Dhingra, V. [Department of Electronic Science, Acharya Narendra Dev College, University of Delhi, Kalkaji, New Delhi- 110019 (India)

    2016-05-06

    Graphene Oxide (GO) is analogous to graphene, but presence of many functional groups makes its physical and chemical properties essentially different from those of graphene. GO is found to be a promising material for low cost fabrication of highly versatile and environment friendly gas sensors. Selectivity, reversibility and sensitivity of GO based gas sensor have been improved by hybridization with Zinc Oxide nanoparticles. The device is fabricated by spin coating of deionized water dispersed GO flakes (synthesized using traditional hummer’s method) doped with Zinc Oxide on standard glass substrate. Since GO is an insulator and functional groups on GO nanosheets play vital role in adsorbing gas molecules, it is being used as an adsorber. Additionally, on being exposed to certain gases the electric and optical characteristics of GO material exhibit an alteration in behavior. For the conductivity, we use Zinc Oxide, as it displays a high sensitivity towards conduction. The effects of the compositions, structural defects and morphologies of graphene based sensing layers and the configurations of sensing devices on the performances of gas sensors were investigated by Raman Spectroscopy, X-ray diffraction(XRD) and Keithley Sourcemeter.

  1. Low oxidation state aluminum-containing cluster anions: LAlH-and LAln-(n = 2-4, L = N[Si(Me)3]2).

    Science.gov (United States)

    Zhang, Xinxing; Wang, Linjie; Montone, Georgia R; Gill, Ann F; Ganteför, Gerd; Eichhorn, Bryan; Kandalam, Anil K; Bowen, Kit H

    2017-06-14

    Several low oxidation state aluminum-containing cluster anions, LAlH - and LAl n - (n = 2-4, L = N[Si(Me) 3 ] 2 ), were produced via reactions between aluminum hydride cluster anions, Al x H y - , and hexamethyldisilazane (HMDS). These clusters were characterized by mass spectrometry, anion photoelectron spectroscopy, and density functional theory (DFT) based calculations. Agreement between the experimental and theoretical vertical detachment energies (VDEs) and adiabatic detachment energies (ADEs) validated the computed geometrical structures. Reactions between aluminum hydride cluster anions and ligands promise to be a new synthetic scheme for low oxidation state, ligated aluminum clusters.

  2. Electrosynthesis of highly transparent cobalt oxide water oxidation catalyst films from cobalt aminopolycarboxylate complexes.

    Science.gov (United States)

    Bonke, Shannon A; Wiechen, Mathias; Hocking, Rosalie K; Fang, Xi-Ya; Lupton, David W; MacFarlane, Douglas R; Spiccia, Leone

    2015-04-24

    Efficient catalysis of water oxidation represents one of the major challenges en route to efficient sunlight-driven water splitting. Cobalt oxides (CoOx ) have been widely investigated as water oxidation catalysts, although the incorporation of these materials into photoelectrochemical devices has been hindered by a lack of transparency. Herein, the electrosynthesis of transparent CoOx catalyst films is described by utilizing cobalt(II) aminopolycarboxylate complexes as precursors to the oxide. These complexes allow control over the deposition rate and morphology to enable the production of thin, catalytic CoOx films on a conductive substrate, which can be exploited in integrated photoelectrochemical devices. Notably, under a bias of 1.0 V (vs. Ag/AgCl), the film deposited from [Co(NTA)(OH2 )2 ](-) (NTA=nitrilotriacetate) decreased the transmission by only 10 % at λ=500 nm, but still generated >80 % of the water oxidation current produced by a [Co(OH2 )6 ](2+) -derived oxide film whose transmission was only 40 % at λ=500 nm. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Preparation and Properties of Microarc Oxidation Self-Lubricating Composite Coatings on Aluminum Alloy

    Directory of Open Access Journals (Sweden)

    Zhenwei Li

    2017-04-01

    Full Text Available Microarc oxidation (MAO coatings were prepared on 2024-T4 aluminum alloy using pulsed bipolar power supply at different cathode current densities. The MAO ceramic coatings contained many crater-like micropores and a small number of microcracks. After the MAO coatings were formed, the coated samples were immersed into a water-based Polytetrafluoroethylene (PTFE dispersion. The micropores and microcracks on the surface of the MAO coatings were filled with PTFE dispersion for preparing MAO self-lubricating composite coatings. The microstructure and properties of MAO coatings and the wear resistance of microarc oxidation self-lubricating composite coatings were analyzed by SEM, laser confocal microscope, X-ray diffractometry (XRD, Vickers hardness test, scratch test and ball-on-disc abrasive tests, respectively. The results revealed that the wear rates of the MAO coatings decreased significantly with an increase in cathode current density. Compared to the MAO coatings, the microarc oxidation self-lubricating composite coatings exhibited a lower friction coefficient and lower wear rates.

  4. CuOX thin films by direct oxidation of Cu films deposited by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    D. Santos-Cruz

    Full Text Available Thin films of Cu2O and CuO oxides were developed by direct oxidation of physical vapor deposited copper films in an open atmosphere by varying the temperature in the range between 250 and 400 °C. In this work, the influence of oxidation temperature on structural, optical and electrical properties of copper oxide films has been discussed. The characterization results revealed that at lower temperatures (<300 °C, it is feasible to obtained coper (I oxide whereas at temperatures higher than 300 °C, the copper (II oxide is formed. The band gap is found to vary in between 1.54 and 2.21 eV depending on the oxidation temperature. Both oxides present p-type electrical conductivity. The carrier concentration has been increased as a function of the oxidation temperature from 1.61 × 1012 at 250 °C to 6.8 × 1012 cm−3 at 400 °C. The mobility has attained its maximum of 34.5 cm2 V−1 s−1 at a temperature of 300 °C, and a minimum of 13.8 cm2 V−1 s−1 for 400 °C. Finally, the resistivity of copper oxide films decreases as a function of oxidation temperature from 5.4 × 106 to 2.4 × 105 Ω-cm at 250 and 400 °C, respectively. Keywords: PVD, Oxidizing annealed treatment, Non-toxic material

  5. Microstructure and protection characteristics of the naturally formed oxide films on Mg–xZn alloys

    International Nuclear Information System (INIS)

    Song, Yingwei; Han, En-Hou; Dong, Kaihui; Shan, Dayong; Yim, Chang Dong; You, Bong Sun

    2013-01-01

    Highlights: •The oxide films on Mg–xZn alloys consist of similar chemical composition. •The higher Zn content results in the thicker but higher defect of the oxide films. •The oxide films exhibit different protection performance under various potentials. -- Abstract: The naturally formed oxide films on Mg–2Zn and Mg–5Zn alloys were investigated by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. The oxide films on the both alloys present a similar chemical composition, consisting of surface layer of basic magnesium carbonate and MgO following with MgO and ZnO, but the oxide film on Mg–5Zn is thicker and contains more defects. The protection performance of the oxide film on Mg–5Zn is worse under open circuit potential but better in a suitable anodic potential scope compared with that on Mg–2Zn alloy

  6. Oxide and proton conductivity in aluminum-doped tricalcium oxy-silicate

    Energy Technology Data Exchange (ETDEWEB)

    Porras-Vazquez, J.M.; De la Torre, A.G.; Losilla, E.R.; Aranda, M.A.G. [Dept. Quimica Inorganica, Cristalografia y Mineralogia, Universidad de Malaga, Campus Teatinos, 29071-Malaga (Spain)

    2007-06-15

    Aluminum doping in tricalcium silicate, Ca{sub 3}(SiO{sub 4})O, has been studied by high-resolution laboratory X-ray powder diffraction and the Rietveld method. Two nominal series have been designed and studied. Oxygen-fixed Ca{sub 3-x/2}Al{sub x/2}(Si{sub 1-x/2}Al{sub x/2}O{sub 4})O series has been prepared as single-phase up to x = 0.03. However, oxygen-variable Ca{sub 3}(Si{sub 1-x}Al{sub x}O{sub 4})O{sub 1-x/2}{open_square}{sub x/2} series has not been stabilized for any composition. The samples show oxide anion conductivity with a small p-type electronic contribution under oxidizing conditions. Typical total conductivities for these solids are 10{sup -} {sup 5}-10{sup -} {sup 4}S cm{sup -} {sup 1} at 1100 K. The oxide ion transference numbers are very high, {proportional_to} 0.98, under reducing conditions, i.e. dry 5%H{sub 2}-N{sub 2}/air gradient. The oxide ion transference numbers are slightly lower, {proportional_to} 0.91 under oxidizing conditions, i.e. dry O{sub 2}/air gradient. These compounds display a very important proton contribution to the overall conductivities under humidified atmospheres. The proton transference number ranges between 0.72 and 0.55 at 873 and 1023 K, respectively. (author)

  7. Thin Films of Reduced Hafnium Oxide with Excess Carbon for High-Temperature Oxidation Protection

    Science.gov (United States)

    2010-02-01

    deposited on the following substrates: Si, Si02 (fused silica), SiC (polished CVD slabs ), and highly oriented pyrolytic graphite (HOPG). For Si and...lost. SEM images of surfaces of films annealed in O2 show fissures (Fig. 14a) that become more pronounced for films with higher initial carbon...content (Fig. 14b). This indicates that the fissures are produced by the gaseous products of carbon oxidation (CO and CO2), which are generated in large

  8. PHOTOELECTRIC AND PHOTOMAGNETIC RESPONSE OF INDIUM-TIN OXIDE FILMS

    Directory of Open Access Journals (Sweden)

    I. K. Meshkovsky

    2015-11-01

    Full Text Available Subject of Research. The goal of the present research is investigation of photoelectric and photomagnetic response of ITO (indium-tin oxide films under UV laser irradiation. Method. The ITO films were prepared by magnetron sputtering with the thickness equal to 300nm. The films were irradiated by UV laser light with 248 nm wavelength in laser pulse energy range from 10 mJ to 150 mJ by KrF excimer laser. Metallic electrodes were deposited on the films. Information about the films surface topography was obtained by atomic force microscopy and scanning electron microscopy. The film structure was investigated by X-ray diffraction. Main Results. It was shown that voltage appears between metallic contacts under the UV light effect. The electric current was observed through resistive load. The anisotropy of electric field producing photoelectric response was demonstrated for the first time. The appearance of magnetic field under the laser light irradiation was observed for the first time. The dependence of the response voltage on the laser pulse energy was linear over the whole measured energy range. The following physical mechanism was proposed for description of the observed phenomenon: electric voltage is associated with non-uniform distribution of the average crystallite size along the film surface, and, therefore, with mean free path of the charge carriers along the film surface. Photomagnetic response could be associated with collective behavior of the large number of charged particles, created due to high intensity laser irradiation. Practical Relevance. The phenomenon being studied could be applied for creation of new optoelectronic devices, for example, modulators, optical detectors, etc. Particularly, due to linear dependence of photoelectric response on the laser pulse energy, this phenomenon is attractive for manufacturing of simple and cheap excimer laser pulse energy detectors.

  9. Modification of graphene oxide films by radiofrequency N2 plasma

    Science.gov (United States)

    Neustroev, E. P.; Burtseva, E. K.; Soloviev, B. D.; Prokopiev, A. R.; Popov, V. I.; Timofeev, V. B.

    2018-04-01

    The effect of treatment in nitrogen plasma on the properties of partially reduced graphene oxide (rGO) was studied. A comparison is made between two different sample locations in the reaction chamber. It is shown that in the case when rGO films were turned towards the inductor of the plasma system, the etching rate is much higher. Effective nitrogen functionalization of rGO was established in the second position, when the rGO films were turned in the opposite direction. In this case, the nitrogen content increases to 5 at% of the initial value. The change in the current-voltage characteristics is observed under illumination, which is independent of the wavelength. On and off daylight changes the resistance to 30% of the initial value. The magnitude of the photocurrent increases depending on the applied voltage. The effect is most noticeable for thin rGO films 10-15 nm in thickness.

  10. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  11. Tunable Nanostructures and Crystal Structures in Titanium Oxide Films

    Directory of Open Access Journals (Sweden)

    Fuess H

    2008-01-01

    Full Text Available Abstract Controllable nanostructures in spin coated titanium oxide (TiO2 films have been achieved by a very simple means, through change of post deposition annealing temperature. Electron beam imaging and reciprocal space analysis revealed as-deposited TiO2films to be characterized by a dominant anatase phase which converts to the rutile form at 600 °C and reverts to the anatase modification at 1,200 °C. The phase changes are also accompanied by changes in the film microstructure: from regular nanoparticles (as-deposited to nanowires (600 °C and finally to dendrite like shapes at 1,200 °C. Photoluminescence studies, Raman spectral results, and X-ray diffraction data also furnish evidence in support of the observed solid state phase transformations in TiO2.

  12. Numerical experiments on evaporation and explosive boiling of ultra-thin liquid argon film on aluminum nanostructure substrate.

    Science.gov (United States)

    Wang, Weidong; Zhang, Haiyan; Tian, Conghui; Meng, Xiaojie

    2015-01-01

    Evaporation and explosive boiling of ultra-thin liquid film are of great significant fundamental importance for both science and engineering applications. The evaporation and explosive boiling of ultra-thin liquid film absorbed on an aluminum nanostructure solid wall are investigated by means of molecular dynamics simulations. The simulated system consists of three regions: liquid argon, vapor argon, and an aluminum substrate decorated with nanostructures of different heights. Those simulations begin with an initial configuration for the complex liquid-vapor-solid system, followed by an equilibrating system at 90 K, and conclude with two different jump temperatures, including 150 and 310 K which are far beyond the critical temperature. The space and time dependences of temperature, pressure, density number, and net evaporation rate are monitored to investigate the phase transition process on a flat surface with and without nanostructures. The simulation results reveal that the nanostructures are of great help to raise the heat transfer efficiency and that evaporation rate increases with the nanostructures' height in a certain range.

  13. Reduction of graphene oxide and its effect on square resistance of reduced graphene oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Zhaoxia; Zhou, Yin; Li, Guang Bin; Wang, Shaohong; Wang, Mei Han; Hu, Xiaodan; Li, Siming [Liaoning Province Key Laboratory of New Functional Materials and Chemical Technology, School ofMechanical Engineering, Shenyang University, Shenyang (China)

    2015-06-15

    Graphite oxide was prepared via the modified Hummers’ method and graphene via chemical reduction. Deoxygenation efficiency of graphene oxide was compared among single reductants including sodium borohydride, hydrohalic acids, hydrazine hydrate, and vitamin C. Two-step reduction of graphene oxide was primarily studied. The reduced graphene oxide was characterized by XRD, TG, SEM, XPS, and Raman spectroscopy. Square resistance was measured as well. Results showed that films with single-step N2H4 reduction have the best transmittance and electrical conductivity with square resistance of ~5746 Ω/sq at 70% transmittance. This provided an experimental basis of using graphene for electronic device applications.

  14. Application of alternating current impedance measurements to characterize zirconium alloy oxidation films

    Science.gov (United States)

    Rosecrans, P. M.

    1982-06-01

    In an effort to understand observed differences in high temperature steam corrosion resistance, high frequency (500 Hz) a-c impedance measurements were used to monitor the permeability of oxidation films formed on Zircaloy 2 and Zircaloy 4 samples exposed to high temperature steam. Differences in oxidation resistance are related to differences in oxidation film permeability and ultimately to film characteristics. When these results are added to the existing data base established for zirconium alloy oxidation films using the high frequency impedance technique, improved understanding of the role of bulk corrodent access to the metal-oxide interface during oxidation becomes possible. In addition, differences in film character resulting from differences in oxidation environment become apparent upon review of the existing data base. Such differences may have practical application in selecting material preconditioning procedures and suggest explanations for some oxide film memory effects reported in the literature.

  15. Manganese oxide nanowires, films, and membranes and methods of making

    Science.gov (United States)

    Suib, Steven Lawrence [Storrs, CT; Yuan, Jikang [Storrs, CT

    2008-10-21

    Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer are substantially axially aligned.

  16. Photocatalytic oxide films in the built environment

    Science.gov (United States)

    Österlund, Lars; Topalian, Zareh

    2014-11-01

    The possibility to increase human comfort in buildings is a powerful driving force for the introduction of new technology. Among other things our sense of comfort depends on air quality, temperature, lighting level, and the possibility of having visual contact between indoors and outdoors. Indeed there is an intimate connection between energy, comfort, and health issues in the built environment, leading to a need for intelligent building materials and green architecture. Photocatalytic materials can be applied as coatings, filters, and be embedded in building materials to provide self-cleaning, antibacterial, air cleaning, deodorizing, and water cleaning functions utilizing either solar light or artificial illumination sources - either already present in buildings, or by purposefully designed luminaries. Huge improvements in indoor comfort can thus be made, and also alleviate negative health effects associated with buildings, such as the sick-house syndrome. At the same time huge cost savings can be made by reducing maintenance costs. Photocatalytic oxides can be chemically modified by changing their acid-base surface properties, which can be used to overcome deactivation problems commonly encountered for TiO2 in air cleaning applications. In addition, the wetting properties of oxides can be tailored by surface chemical modifications and thus be made e.g. oleophobic and water repellent. Here we show results of surface acid modified TiO2 coatings on various substrates by means of photo-fixation of surface sulfate species by a method invented in our group. In particular, we show that such surface treatments of photocatalytic concrete made by mixing TiO2 nanoparticles in reactive concrete powders result in concrete surfaces with beneficial self-cleaning properties. We propose that such approaches are feasible for a number of applications in the built environment, including glass, tiles, sheet metals, plastics, etc.

  17. Photocatalytic oxide films in the built environment

    International Nuclear Information System (INIS)

    Österlund, Lars; Topalian, Zareh

    2014-01-01

    The possibility to increase human comfort in buildings is a powerful driving force for the introduction of new technology. Among other things our sense of comfort depends on air quality, temperature, lighting level, and the possibility of having visual contact between indoors and outdoors. Indeed there is an intimate connection between energy, comfort, and health issues in the built environment, leading to a need for intelligent building materials and green architecture. Photocatalytic materials can be applied as coatings, filters, and be embedded in building materials to provide self-cleaning, antibacterial, air cleaning, deodorizing, and water cleaning functions utilizing either solar light or artificial illumination sources – either already present in buildings, or by purposefully designed luminaries. Huge improvements in indoor comfort can thus be made, and also alleviate negative health effects associated with buildings, such as the sick-house syndrome. At the same time huge cost savings can be made by reducing maintenance costs. Photocatalytic oxides can be chemically modified by changing their acid-base surface properties, which can be used to overcome deactivation problems commonly encountered for TiO 2 in air cleaning applications. In addition, the wetting properties of oxides can be tailored by surface chemical modifications and thus be made e.g. oleophobic and water repellent. Here we show results of surface acid modified TiO 2 coatings on various substrates by means of photo-fixation of surface sulfate species by a method invented in our group. In particular, we show that such surface treatments of photocatalytic concrete made by mixing TiO 2 nanoparticles in reactive concrete powders result in concrete surfaces with beneficial self-cleaning properties. We propose that such approaches are feasible for a number of applications in the built environment, including glass, tiles, sheet metals, plastics, etc

  18. Strontium doped hydroxyapatite film formed by micro-arc oxidation

    International Nuclear Information System (INIS)

    Nan Kaihui; Wu Tao; Chen Jionghao; Jiang Shan; Huang Yong; Pei Guoxian

    2009-01-01

    A porous strontium-doped hydroxyapatite (Sr-HA) film was prepared on titanium substrates by an electrochemical oxidation method, i.e. micro-arc oxidation (MAO). The reaction was processed using a pulse power supply with titanium substrate acted as the anode in electrolytic solution containing calcium acetate, strontium acetate and β-glycerol phosphate disodium salt pentahydrate (β-GP). The thickness, phase, composition and morphology of the coatings were investigated with X-ray diffraction (XRD), electron probe microanalysis (EPMA) and scanning electron microscopy (SEM) with energy dispersive X-ray spectrometer (EDS). The thickness of the film was about 20 μm with the porous and uneven surfaces. XRD showed that the film was mainly made up of hydroxyapatite doped with strontium and the (Sr/(Sr + Ca) ratios ranged from 0-100%, which could be expressed as the general formula of Ca 10-X Sr X (PO 4 ) 6 (OH) 2 , 0 ≤ X ≤ 10). Such films are expected to have significant medical applications as dental implants and artificial bone joints.

  19. Metal oxide films on glass and steel substrates

    CERN Document Server

    Sohi, A M

    1987-01-01

    in the pH8 electrolyte supports the view that the rate limiting reduction reaction is possibly oxygen (or water) reduction although some contribution from an organic 'impurity' cannot be ruled out. Coatings of Fe sub 3 O sub 4 on mild steel have been prepared by CVD using pneumatic spraying techniques and the corrosion behaviour of coated electrodes in organic-phosphate electrolyte (pH8) has been examined. A variety of thin (10-1000nm) metal oxide films have been deposited on flat glass substrates by the pyrolysis of an aerosol of metal acetylacetonates in a suitable carrier. The optical characteristics and thickness of the films have been measured and particular interest has centered on the use of a novel pin on disc apparatus to measure the physical durability of such thin films. Characteristic friction/penetration force traces have been established for 1st Series transition metal oxide films and some ranking in terms of 'hardness' established. The use of SnO sub 2 - coated glass for electrodes in a light m...

  20. Growth kinetics and morphology of plasma electrolytic oxidation coating on aluminum

    International Nuclear Information System (INIS)

    Erfanifar, Eliyas; Aliofkhazraei, Mahmood; Fakhr Nabavi, Houman; Sharifi, Hossein; Rouhaghdam, Alireza Sabour

    2017-01-01

    Plasma electrolytic oxidation (PEO) was carried out on AA1190 aluminum alloy in mixed silicate-phosphate-based electrolyte in order to fabricate ceramic coating under constant current density. The variations of PEO coating duration with kinetics, surface roughness, amount and size of discharge channels were studied with respect to PEO processing time. The growth mechanism of the ceramic coating was described considering a variation of volume and diameters of discharge channels and pancakes during the PEO. Scanning electron microscope (SEM), atomic force microscope (AFM), and roughness tester were used to study the plasma discharge channels of the PEO coatings. In addition, the effect of alumina nanoparticles in the electrolyte as the suspension was studied on the geometric parameters of discharge channels. It seems that the nanoparticles are adsorbed to the locations of erupted molten oxide, where the dielectric breakdown occurs. Nanoparticles were embedded in the dense oxide layer and were adsorbed at the walls of voids and coatings surface. As a result, they caused significant changes in roughness parameters of the samples containing nanoparticles compared to those without nanoparticles. The obtained results showed that growth kinetics followed a linear trend with respect to PEO coating duration. It was also observed that in the absence of alumina nanoparticles, the average volume of the pancakes is 150% greater than the ones fabricated in the suspension of nanoparticles. Besides, increasing the PEO coating duration leads to adsorbing more nanoparticles on the coating surface, filling the voids, and flattening the surface, and alterations in R v , R sk , and R lo parameters. Correlation between the diameter of discharge channel (d c ) and thickness of the pancake (h) also showed a linear relation. - Highlights: • Precise calculation of thickness of pancake with AFM. • Study of different roughness parameters for PEO coating. • Calculation the amount of

  1. Growth kinetics and morphology of plasma electrolytic oxidation coating on aluminum

    Energy Technology Data Exchange (ETDEWEB)

    Erfanifar, Eliyas; Aliofkhazraei, Mahmood, E-mail: maliofkh@gmail.com; Fakhr Nabavi, Houman; Sharifi, Hossein; Rouhaghdam, Alireza Sabour

    2017-01-01

    Plasma electrolytic oxidation (PEO) was carried out on AA1190 aluminum alloy in mixed silicate-phosphate-based electrolyte in order to fabricate ceramic coating under constant current density. The variations of PEO coating duration with kinetics, surface roughness, amount and size of discharge channels were studied with respect to PEO processing time. The growth mechanism of the ceramic coating was described considering a variation of volume and diameters of discharge channels and pancakes during the PEO. Scanning electron microscope (SEM), atomic force microscope (AFM), and roughness tester were used to study the plasma discharge channels of the PEO coatings. In addition, the effect of alumina nanoparticles in the electrolyte as the suspension was studied on the geometric parameters of discharge channels. It seems that the nanoparticles are adsorbed to the locations of erupted molten oxide, where the dielectric breakdown occurs. Nanoparticles were embedded in the dense oxide layer and were adsorbed at the walls of voids and coatings surface. As a result, they caused significant changes in roughness parameters of the samples containing nanoparticles compared to those without nanoparticles. The obtained results showed that growth kinetics followed a linear trend with respect to PEO coating duration. It was also observed that in the absence of alumina nanoparticles, the average volume of the pancakes is 150% greater than the ones fabricated in the suspension of nanoparticles. Besides, increasing the PEO coating duration leads to adsorbing more nanoparticles on the coating surface, filling the voids, and flattening the surface, and alterations in R{sub v}, R{sub sk}, and R{sub lo} parameters. Correlation between the diameter of discharge channel (d{sub c}) and thickness of the pancake (h) also showed a linear relation. - Highlights: • Precise calculation of thickness of pancake with AFM. • Study of different roughness parameters for PEO coating. • Calculation

  2. Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation

    International Nuclear Information System (INIS)

    Liao, B; Stangl, R; Ma, F; Mueller, T; Lin, F; Aberle, A G; Bhatia, C S; Hoex, B

    2013-01-01

    We demonstrate that by using a water (H 2 O)-based thermal atomic layer deposited (ALD) aluminum oxide (Al 2 O 3 ) film, excellent surface passivation can be attained on planar low-resistivity silicon wafers. Effective carrier lifetime values of up to 12 ms and surface recombination velocities as low as 0.33 cm s −1 are achieved on float-zone wafers after a post-deposition thermal activation of the Al 2 O 3 passivation layer. This post-deposition activation is achieved using an industrial high-temperature firing process which is commonly used for contact formation of standard screen-printed silicon solar cells. Neither a low-temperature post-deposition anneal nor a silicon nitride capping layer is required in this case. Deposition temperatures in the 100–400 °C range and peak firing temperatures of about 800 °C (set temperature) are investigated. Photoluminescence imaging shows that the surface passivation is laterally uniform. Corona charging and capacitance–voltage measurements reveal that the negative fixed charge density near the AlO x /c-Si interface increases from 1.4 × 10 12 to 3.3 × 10 12 cm −2 due to firing, while the midgap interface defect density reduces from 3.3 × 10 11 to 0.8 × 10 11 cm −2 eV −1 . This work demonstrates that direct firing activation of thermal ALD Al 2 O 3 is feasible, which could be beneficial for solar cell manufacturing. (paper)

  3. An experimental study on accelerated fouling of aluminum oxide and ferric oxide particles in internally enhanced tubes

    Energy Technology Data Exchange (ETDEWEB)

    Abedin, Mohammad Zoynal; Kim, Nae Hyun [School of Mechanical System Engineering, Incheon National University, Incheon (Korea, Republic of)

    2016-12-15

    This paper describes the results of accelerated particulate fouling tests performed on three enhanced tubes and a plain tube. The tests were performed using ferric oxide and aluminum oxide as foulant materials. Three enhanced tubes included 25 start, 10 start helically ribbed tubes and a ripple tube. Effects of the water velocity (0.9 to 1.8 m/s) and foulant concentration (750 to 2500 ppm) were investigated. At 750 ppm, the enhanced tubes fouled almost the same as the plain tube for the entire velocity range tested (0.9 to 1.8 m/s). The enhanced tube fouled faster than the plain tube for cases of high concentration combined with low velocities. Of the three enhanced tubes, the 25 start helically ribbed tube fouled faster than the ripple and the 10 start helically ribbed tubes. One thing to be noted is that the fouling concentrations used in the tests are significantly higher than would be expected in commercial heat exchangers. Also, the velocity range investigated is lower than would be expected in heat exchanger operation.

  4. Porous Zinc Oxide Thin Films: Synthesis Approaches and Applications

    Directory of Open Access Journals (Sweden)

    Marco Laurenti

    2018-02-01

    Full Text Available Zinc oxide (ZnO thin films have been widely investigated due to their multifunctional properties, i.e., catalytic, semiconducting and optical. They have found practical use in a wide number of application fields. However, the presence of a compact micro/nanostructure has often limited the resulting material properties. Moreover, with the advent of low-dimensional ZnO nanostructures featuring unique physical and chemical properties, the interest in studying ZnO thin films diminished more and more. Therefore, the possibility to combine at the same time the advantages of thin-film based synthesis technologies together with a high surface area and a porous structure might represent a powerful solution to prepare ZnO thin films with unprecedented physical and chemical characteristics that may find use in novel application fields. Within this scope, this review offers an overview on the most successful synthesis methods that are able to produce ZnO thin films with both framework and textural porosities. Moreover, we discuss the related applications, mainly focused on photocatalytic degradation of dyes, gas sensor fabrication and photoanodes for dye-sensitized solar cells.

  5. Strain-induced phenomenon in complex oxide thin films

    Science.gov (United States)

    Haislmaier, Ryan

    Complex oxide materials wield an immense spectrum of functional properties such as ferroelectricity, ferromagnetism, magnetoelectricity, optoelectricity, optomechanical, magnetoresistance, superconductivity, etc. The rich coupling between charge, spin, strain, and orbital degrees of freedom makes this material class extremely desirable and relevant for next generation electronic devices and technologies which are trending towards nanoscale dimensions. Development of complex oxide thin film materials is essential for realizing their integration into nanoscale electronic devices, where theoretically predicted multifunctional capabilities of oxides could add tremendous value. Employing thin film growth strategies such as epitaxial strain and heterostructure interface engineering can greatly enhance and even unlock novel material properties in complex oxides, which will be the main focus of this work. However, physically incorporating oxide materials into devices remains a challenge. While advancements in molecular beam epitaxy (MBE) of thin film oxide materials has led to the ability to grow oxide materials with atomic layer precision, there are still major limitations such as controlling stoichiometric compositions during growth as well as creating abrupt interfaces in multi-component layered oxide structures. The work done in this thesis addresses ways to overcome these limitations in order to harness intrinsic material phenomena. The development of adsorption-controlled stoichiometric growth windows of CaTiO3 and SrTiO3 thin film materials grown by hybrid MBE where Ti is supplied using metal-organic titanium tetraisopropoxide material is thoroughly outlined. These growth windows enable superior epitaxial strain-induced ferroelectric and dielectric properties to be accessed as demonstrated by chemical, structural, electrical, and optical characterization techniques. For tensile strained CaTiO3 and compressive strained SrTiO 3 films, the critical effects of

  6. Thermal oxidation of Ni films for p-type thin-film transistors

    KAUST Repository

    Jiang, Jie

    2013-01-01

    p-Type nanocrystal NiO-based thin-film transistors (TFTs) are fabricated by simply oxidizing thin Ni films at temperatures as low as 400 °C. The highest field-effect mobility in a linear region and the current on-off ratio are found to be 5.2 cm2 V-1 s-1 and 2.2 × 103, respectively. X-ray diffraction, transmission electron microscopy and electrical performances of the TFTs with "top contact" and "bottom contact" channels suggest that the upper parts of the Ni films are clearly oxidized. In contrast, the lower parts in contact with the gate dielectric are partially oxidized to form a quasi-discontinuous Ni layer, which does not fully shield the gate electric field, but still conduct the source and drain current. This simple method for producing p-type TFTs may be promising for the next-generation oxide-based electronic applications. © 2013 the Owner Societies.

  7. Aluminum-induced oxidative stress and neurotoxicity in grass carp (Cyprinidae--Ctenopharingodon idella).

    Science.gov (United States)

    Fernández-Dávila, María Lourdes; Razo-Estrada, Amparo Celene; García-Medina, Sandra; Gómez-Oliván, Leobardo Manuel; Piñón-López, Manuel Jesús; Ibarra, Rocio Guzmán; Galar-Martínez, Marcela

    2012-02-01

    Aluminum is used in a large number of anthropogenic processes, leading to aquatic ecosystems pollution. Diverse studies show that in mammals this metal may produce oxidative stress, is neurotoxic, and is involved in the development of neurodegenerative disorders, such as Alzhaimer's and Parkinson's diseases. Nevertheless, there are only few studies with respect to Al-induced neurotoxicity on aquatic fauna, particularly on fishes of economical interest, such as the grass carp (Ctenopharingodon idella). This study evaluates Al-induced toxicity on the grass carp C. idella. Specimens were exposed to the maximum concentration allowed in order to protect aquatic life (0.1 mg L⁻¹), for 12, 24, 48, 72 and 96 h. After the exposure time, lipid peroxidation degree, superoxide dismutase and catalase activity, as well as dopamine, adrenaline and noradrenaline levels were evaluated. Al concentration in organisms and water was also measured, in order to determine the bioconcentration factor. Results show that Al bioconcentrates in grass carp inducing oxidative stress (increment of 300 and 455 percent on lipid peroxidation degree and SOD activity, and decrement of 49 percent on CAT activity) and neurotoxicity (increment of 55 and 155 percent on dopamine and adrenaline levels and decrement of 93 percent on noradrenaline level). Copyright © 2011 Elsevier Inc. All rights reserved.

  8. Microarc Oxidation of the High-Silicon Aluminum AK12D Alloy

    Directory of Open Access Journals (Sweden)

    S. K. Kiseleva

    2015-01-01

    Full Text Available The aim of work is to study how the high-silicon aluminum AK12D alloy microstructure and MAO-process modes influence on characteristics (microhardness, porosity and thickness of the oxide layer of formed surface layer.Experimental methods of study:1 MAO processing of AK12D alloy disc-shaped samples. MAO modes features are concentration of electrolyte components – soluble water glass Na2SiO3 and potassium hydroxide (KOH. The content of two components both the soluble water glass and the potassium hydroxide was changed at once, with their concentration ratio remaining constant;2 metallographic analysis of AK12D alloy structure using an optical microscope «Olympus GX51»;3 image analysis of the system "alloy AK12D - MAO - layer" using a scanning electron microscope «JEOL JSM 6490LV»;4 hardness evaluation of the MAO-layers using a micro-hardness tester «Struers Duramin».The porosity, microhardness and thickness of MAO-layer formed on samples with different initial structures are analyzed in detail. Attention is paid to the influence of MAO process modes on the quality layer.It has been proved that the MAO processing allows reaching quality coverage with high microhardness values of 1200-1300HV and thickness up to 114 μm on high-silicon aluminum alloy. It has been found that the initial microstructure of alloy greatly affects the thickness of the MAO - layer. The paper explains the observed effect using the physical principles of MAO process and the nature of silicon particles distribution in the billet volume.It has been shown that increasing concentration of sodium silicate and potassium hydroxide in the electrolyte results in thicker coating and high microhardness.It has been revealed that high microhardness is observed in the thicker MAO-layers.Conclusions:1 The microstructure of aluminum AK12D alloy and concentration of electrolyte components - liquid glass Na2SiO3 and potassium hydroxide affect the quality of coating resulted from MAO

  9. Green light emission in aluminum oxide powders doped with different terbium concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Mariscal B, L; Falcony, C. [IPN, Centro de Investigacion y de Estudios Avanzados, 07360 Ciudad de Mexico (Mexico); Carmona T, S.; Murrieta, H.; Sanchez A, M. A. [UNAM, Instituto de Fisica, 04510 Ciudad de Mexico (Mexico); Vazquez A, R. [IPN, Escuela Superior de Computo, 07738 Ciudad de Mexico (Mexico); Garcia R, C. M., E-mail: mariscal2005@gmail.com [UNAM, Facultad de Ciencias, 04510 Ciudad de Mexico (Mexico)

    2016-11-01

    Different emission intensities presented in aluminum oxide phosphors corresponding to different concentrations of doping performed with terbium are analyzed. The phosphors were synthesized by the evaporation technique and were characterized by photo and cathodoluminescence, X-ray diffraction and EDS techniques for different incorporation percentages of terbium as dopant; they show characteristic transitions in 494, 543, 587 and 622 nm, corresponding to {sup 5}D{sub 4} → {sup 7}F{sub 6}, {sup 5}D{sub 4} → {sup 7}F{sub 5}, {sup 5}D{sub 4} → {sup 7}F{sub 4} and {sup 5}D{sub 4} → {sup 7}F{sub 3}, respectively when they are excited with λ{sub exc} = 380 nm wavelength at room temperature. The results of X-ray diffraction show the presence of α-Al{sub 2}O{sub 3} phases with peaks located at 2θ = 25.78, 35.34, 37.96, 43.56, 45.8, 52.74, 57.7, 61.5, 66.74, 68.44, 77.12 and 80.94, and the δ-Al{sub 2}O-3 phase 2θ = 32.82, 45.8, 61.36 and 66.74. These compounds were heat treated for two hours at 1100 degrees Celsius. EDS analyzes indicate that these compounds have close to 60% oxygen around of 40% aluminum in the presence of terbium as dopant which indicates a stoichiometry close to the expected one for alumina. (Author)

  10. Magnetic transparent conducting oxide film and method of making

    Science.gov (United States)

    Windisch, Jr., Charles F.; Exarhos, Gregory J.; Sharma, Shiv K.

    2004-07-13

    Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 .OMEGA..multidot.cm have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at 450.degree. C. in air. Films deposited on sapphire substrates exhibit a refractive index of about 1.7 and are relatively transparent in the wavelength region from 0.6 to 10.0 .mu.m. They are also magnetic. The electrical and spectroscopic properties of the oxides have been studied as a function of x=Co/(Co+Ni) ratio. An increase in film resistivity was found upon substitution of other cations (e.g., Zn.sup.2+, Al.sup.3+) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/Vis and Raman spectroscopy indicated that NiCo.sub.2 O.sub.4 is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry. When x0.67, the oxide was all spinel but the increased Co content lowered the conductivity. The influence of cation charge state and site occupancy in the spinel structure markedly affects calculated electron band structures and contributes to a reduction of p-type conductivity, the formation of polarons, and the reduction in population of mobile charge carriers that tend to limit transmission in the infrared.

  11. Syntheses of rare-earth metal oxide nanotubes by the sol-gel method assisted with porous anodic aluminum oxide templates

    International Nuclear Information System (INIS)

    Kuang Qin; Lin Zhiwei; Lian Wei; Jiang Zhiyuan; Xie Zhaoxiong; Huang Rongbin; Zheng Lansun

    2007-01-01

    In this paper, we report a versatile synthetic method of ordered rare-earth metal (RE) oxide nanotubes. RE (RE=Y, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb) oxide nanotubes were successfully prepared from corresponding RE nitrate solution via the sol-gel method assisted with porous anodic aluminum oxide (AAO) templates. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution TEM, and X-ray diffraction (XRD) have been employed to characterize the morphology and composition of the as-prepared nanotubes. It is found that as-prepared RE oxides evolve into bamboo-like nanotubes and entirely hollow nanotubes. A new possible formation mechanism of RE oxide nanotubes in the AAO channels is proposed. These high-quantity RE oxide nanotubes are expected to have promising applications in many areas such as luminescent materials, catalysts, magnets, etc. - Graphical abstract: A versatile synthetic method for the preparation of ordered rare-earth (RE) oxide nanotubes is reported, by which RE (RE=Y, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb) oxide nanotubes were successfully prepared from corresponding RE nitrate solution via the sol-gel method assisted with porous anodic aluminum oxide (AAO) templates

  12. Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Xu, E-mail: GAO.Xu@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Aikawa, Shinya; Mitoma, Nobuhiko; Lin, Meng-Fang; Kizu, Takio; Tsukagoshi, Kazuhito, E-mail: GAO.Xu@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan)

    2014-07-14

    Oxide thin film transistor employing copper source/drain electrodes shows a small turn on voltage and reduced hysteresis. Cross-sectional high-resolution transmission electron microscopy image confirmed the formation of ∼4 nm CuO{sub x} related interlayer. The lower bond-dissociation energy of Cu-O compared to Si-O and In-O suggests that the interlayer was formed by adsorbing oxygen molecules from surrounding environment instead of getting oxygen atoms from the semiconductor film. The formation of CuO{sub x} interlayer acting as an acceptor could suppress the carrier concentration in the transistor channel, which would be utilized to control the turn on voltage shifts in oxide thin film transistors.

  13. Competitive sorption of Ni and Zn at the aluminum oxide/water interface: an XAFS study.

    Science.gov (United States)

    Gou, Wenxian; Siebecker, Matthew G; Wang, Zimeng; Li, Wei

    2018-03-27

    Trace metals (e.g. Ni, Zn) leached from industrial and agricultural processes are often simultaneously present in contaminated soils and sediments. Their mobility, bioavailability, and ecotoxicity are affected by sorption and cosorption at mineral/solution interfaces. Cosorption of trace metals has been investigated at the macroscopic level, but there is not a clear understanding of the molecular-scale cosorption processes due to lack of spectroscopic information. In this study, Ni and Zn cosorption to aluminum oxides (γ-Al 2 O 3 ) in binary-sorbate systems were compared to their sorption in single-sorbate systems as a function of pH using both macroscopic batch experiments and synchrotron-based X-ray absorption fine structure spectroscopy. At pH 6.0, Ni and Zn were sorbed as inner-sphere surface complexes and competed for the limited number of reactive sites on γ-Al 2 O 3 . In binary-sorbate systems, Ni had no effect on Zn sorption, owning to its lower affinity for the metal oxide surface. In contrast, Zn had a higher affinity for the metal oxide surface and reduced Ni sorption. At pH 7.5, Ni and Zn were sorbed as mixed-metal surface precipitates, including Ni-Al layered double hydroxides (LDHs), Zn-Al LDHs, and likely Ni-Zn-Al layered triple/ternary hydroxides. Additionally, at pH 7.5, Ni and Zn do not exhibit competitive sorption effects in the binary system. Taken together, these results indicated that pH critically influenced the reaction products, and provides a crucial scientific basis to understand the potential mobility, bioavailability, and ecotoxicity of Ni and Zn in natural and contaminated geochemical environments.

  14. Low-Cost Repairable Oxidation Resistant Coatings for Carbon-Carbon Composites via CCVD

    National Research Council Canada - National Science Library

    Hendrick, Michelle

    2000-01-01

    ...) thin film process to yield oxidation resistant coatings on carbon-carbon (C-C) composites. Work was on simple coatings at this preliminary stage of investigation, including silicon dioxide, platinum and aluminum oxide...

  15. Highly conductive grain boundaries in copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deuermeier, Jonas, E-mail: j.deuermeier@campus.fct.unl.pt [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de [Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Fortunato, Elvira [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal)

    2016-06-21

    High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

  16. Polymer assisted deposition of electrochromic tungsten oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kalagi, S.S. [Govindram Seksaria Science College, Belgaum 590006, Karnataka (India); Dalavi, D.S.; Pawar, R.C.; Tarwal, N.L.; Mali, S.S. [Thin Films Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India); Patil, P.S., E-mail: psp_phy@unishivaji.ac.i [Thin Films Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, M.S. (India)

    2010-03-18

    We report the synthesis of structurally and uniformly deposited porous tungsten oxide (WO{sub 3}) thin films for the first time by the novel route of polymer assisted deposition (PAD) using ammonium tungstate as a precursor with polyvinyl alcohol (PVA) as an additive. The effect of deposition parameters on the morphological, optical and electrochemical performance of the thin films is investigated. WO{sub 3} thin films were characterized for their structural, morphological, optical and electrochromic properties. XRD result indicates monoclinic phase of WO{sub 2.92}. FT-Raman studies show high intensity peaks centered at 997 cm{sup -1}and 798 cm{sup -1}. SEM results indicate that there is uniform deposition of porous WO{sub 3}-PVA agglomerates on the transparent substrates. SEM data show low dense structure of an average grain size of about 1 {mu}m. Electrochromic studies reveal highly reversible and the stable nature of the thin films. Transmission data show an optical modulation density of 46.57% at 630 nm with an excellent reversibility of 89% and an electrochromic coloration efficiency of 36 cm{sup 2}/C.

  17. Structure formation upon reactive direct current magnetron sputtering of transition metal oxide films

    International Nuclear Information System (INIS)

    Ngaruiya, J.M.; Kappertz, O.; Mohamed, S.H.; Wuttig, M.

    2004-01-01

    A comparative study of reactive direct current magnetron sputtering for different transition metal oxides reveals crystalline films at room temperature for group 4 and amorphous films for groups 5 and 6. This observation cannot be explained by the known growth laws and is attributed to the impact of energetic particles, originating from the oxidized target, on the growing film. This scenario is supported by measured target characteristics, the evolution of deposition stress of the films, and the observed backsputtering

  18. Fabrication of aluminum and gallium codoped ZnO multilayer transparent conductive films by spin coating method and discussion about improving their performance

    Science.gov (United States)

    Morita, Yusuke; Ohtani, Naoki

    2018-02-01

    We fabricated multilayer aluminum (Al) and gallium (Ga) codoped ZnO (AGZO) transparent conductive films by spin coating and annealing. By cross-sectional transmission electron microscopy (TEM), single-layer AGZO films were found to be discontinuous, and their glass substrates were unfavorably exposed. On the other hand, the area of discontinuous regimes clearly decreased in the double-layer AGZO films, which we fabricated by recoating an AGZO precursor solution on a single-layer AGZO film and annealing the recoated samples. Moreover, the sheet resistances of the multilayer AGZO films decreased from a single-layer AGZO film to a triple-layer AGZO film and was constant for the triple- to quintuple-layer AGZO films. This clearly indicates that the undesired discontinuous regions of the AGZO films were completely improved in the triple-layer AGZO films. In addition, the transmittance of triple-layer AGZO films can be improved by SC-1 substrate cleaning. Consequently, the triple-layer AGZO structure is optimal for fabricating optimal transparent conductive films.

  19. Original article. Protective effect of resveratrol against neuronal damage through oxidative stress in cerebral hemisphere of aluminum and fluoride treated rats

    Directory of Open Access Journals (Sweden)

    Nalagoni Chandra Shakar Reddy

    2016-06-01

    Full Text Available Aluminum has no defined biological function and it is potentially involved in the pathogenesis of neurodegenerative disorders. Furthermore, the presence of fluoride causes more aluminum to accumulate in the brain, resulting in increased neuronal damage. In recent years, resveratrol through its ameliorative effects was found to be a neuroprotectant. This study reports the protective effects of resveratrol on combined aluminum and fluoride induced neuronal damage through oxidative stress in rats. Protective effects of resveratrol (30 mg/kg b.w on markers of oxidative stress were determined in rats exposed to aluminum chloride (100 mg/kg b.w along with sodium fluoride (10 mg/kg b.w for 8 weeks. The results showed a statistically significant (p<0.05 increase in lipid peroxidation (LPx as well as a significant (p<0.05 decrease in superoxide dismutase and catalase activity. Enlarged cells, neurofibrillary tangles, and vacuolar spaces showing oxidative stress in the cerebral cortex were also observed in hematoxylin and eosin stained sections in aluminum and fluoride treated rats. Administration of resveratrol along with aluminum + fluoride showed significant reversal of oxidative stress and neuronal damage in rats. Thus resveratrol potentially acts as a neuroprotectant against aluminum chloride + sodium fluoride induced neuronal damage through its anti-oxidant efficacy.

  20. Pulsed laser deposition of aluminum-doped ZnO films at 355 nm

    DEFF Research Database (Denmark)

    Holmelund, E.; Schou, Jørgen; Thestrup Nielsen, Birgitte

    2004-01-01

    Conducting, transparent films of aluminium-doped ZnO (AZO) have been produced at the laser wavelength 355 nm. The most critical property, the electric resistivity, is up to a factor of 8 above that for films produced at shorter wavelengths. In contrast, the transmission of visible light through...

  1. Low-temperature formation of c-axis-oriented aluminum nitride thin films by plasma-assisted reactive pulsed-DC magnetron sputtering

    Science.gov (United States)

    Takenaka, Kosuke; Satake, Yoshikatsu; Uchida, Giichiro; Setsuhara, Yuichi

    2018-01-01

    The low-temperature formation of c-axis-oriented aluminum nitride thin films was demonstrated by plasma-assisted reactive pulsed-DC magnetron sputtering. The effects of the duty cycle at the pulsed-DC voltage applied to the Al target on the properties of AlN films formed via inductively coupled plasma (ICP)-enhanced pulsed-DC magnetron sputtering deposition were investigated. With decreasing duty cycle at the target voltage, the peak intensity of AlN(0002) increased linearly. The surface roughness of AlN films decreased since there was an increase in film density owing to the impact of energetic ions on the films together with the enhancement of nitriding associated with the relative increase in N radical flux. The improvement of both the crystallinity and surface morphology of AlN films at low temperatures is considered to be caused by the difference between the relative flux values of ions and sputtered atoms.

  2. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  3. Microorganism mediated synthesis of reduced graphene oxide films

    International Nuclear Information System (INIS)

    Tanizawa, Y; Suda, Y; Takikawa, H; Okada, H; Sandhu, A; Okamoto, Y; Tsuzuki, K; Nagao, Y; Iwasa, S; Hiraishi, A; Yoshida, N; Tero, R; Numano, R; Ishikawa, R

    2012-01-01

    The wide-ranging industrial application of graphene and related compounds has led researchers to devise methods for the synthesis of high quality graphene. We recently reported on the chemical synthesis, patterning, and doping of graphene films by the chemical exfoliation of graphite into graphene oxide (GO) with subsequent chemical reduction into graphene films. Here, we describe a hybrid approach for the synthesis of reduced graphene sheets, where chemically derived GO was reduced by microorganisms extracted from a riverside near the University. Our procedure enabled the production of ∼100 μm sized reduced graphene sheets, which showed excellent Raman spectra associated with high quality reduced graphene. We give a detailed account of the relationship between the type of microorganisms and the properties of the resulting reduced graphene.

  4. Effect of zinc oxide incorporation on the morphology of tris(8-hydroxyquinoline)aluminum/zinc oxide hybrid nanomaterials

    International Nuclear Information System (INIS)

    Uthirakumar, Periyayya; Suh, Eun-Kyung; Hong, Chang-Hee

    2008-01-01

    We performed an investigation of amorphous tris(8-hydroxyquinoline)aluminum (Alq 3 ) molecules transferred into α-phase crystalline nanomaterials by incorporating a few weight percentage of crystalline zinc oxide (ZnO) nanoparticles. Various shapes of hybrid Alq 3 -ZnO nanomaterials were synthesized from a one-step solution method at relatively very low temperature. We examined the effect of temperatures and the amount of incorporated ZnO nanoparticles on the evolution of morphologies of hybrid nanomaterials by using field emission scanning electron microscopy. Photoluminescence (PL) spectra of hybrid nanomaterials containing 15 and 25% of ZnO showed a three and five-fold enhancement in PL intensity, respectively, over the pure Alq 3 molecules. We attributed the achievement of higher PL intensity of Alq 3 -ZnO hybrids to the incorporation of crystalline ZnO nanoparticles. This incorporation allowed for energy transfer from ZnO particles and occurrence of caging effect of ZnO nanoparticles thus avoiding excimer formation between Alq 3 molecules in the excited state. A blue-shift in the PL emission of the hybrid nanomaterials resulted, with respect to ZnO content, due to the quantum confinement effect of the ZnO nanoparticles

  5. Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

    CERN Document Server

    Czapski, M; Tardivat, C; Stora, T; Bouville, F; Leloup, J; Luis, R Fernandes; Augusto, R Santos

    2013-01-01

    New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLORA codes. (C) 2013 Elsevier B.V. All rights reserved.

  6. Next Generation Energetic Materials: New Cluster Hydrides and Metastable Alloys of Aluminum in Very Low Oxidation States

    Science.gov (United States)

    2016-10-01

    aluminum clusters, energetic materials, cluster compounds, low oxidation Unclassified Unclassified Unclassified SAR 38 Allen Dalton 703...dialumane supported by pyrazolate ligands”, Snyder, C. J.; Zavalij, P.; Bowen, K. H.; Schnöckel, H.; Eichhorn, B. W. Dalton Transactions. 44, 2956–2958...elementary steps, we additionally per- formed density functional theory calculations. The results show that for both even- and odd-numbered clusters the

  7. Synthesis of aluminum oxy-hydroxide nanofibers from porous anodic alumina

    International Nuclear Information System (INIS)

    Jha, Himendra; Kikuchi, Tatsuya; Sakairi, Masatoshi; Takahashi, Hideaki

    2008-01-01

    A novel method for the synthesis of aluminum oxy-hydroxide nanofibers from a porous anodic oxide film of aluminum is demonstrated. In the present method, the porous anodic alumina not only acts as a template, but also serves as the starting material for the synthesis. The porous anodic alumina film is hydrothermally treated for pore-sealing, which forms aluminum oxy-hydroxide inside the pores of the oxide film as well as on the surface of the film. The hydrothermally sealed porous oxide film is immersed in the sodium citrate solution, which selectively etches the porous aluminum oxide from the film, leaving the oxy-hydroxide intact. The method is simple and gives highly uniform aluminum oxy-hydroxide nanofibers. Moreover, the diameter of the nanofibers can be controlled by controlling the pore size of the porous anodic alumina film, which depends on the anodizing conditions. Nanofibers with diameters of about 38-85 nm, having uniform shape and size, were successfully synthesized using the present method

  8. Polyrhodanine modified anodic aluminum oxide membrane for heavy metal ions removal.

    Science.gov (United States)

    Song, Jooyoung; Oh, Hyuntaek; Kong, Hyeyoung; Jang, Jyongsik

    2011-03-15

    Polyrhodanine was immobilized onto the inner surface of anodic aluminum oxide (AAO) membrane via vapor deposition polymerization method. The polyrhodanine modified membrane was applied to remove heavy metal ions from aqueous solution because polyrhodanine could be coordinated with specific metal ions. Several parameters such as initial metal concentration, contact time and metal species were evaluated systematically for uptake efficiencies of the fabricated membrane under continuous flow condition. Adsorption isotherms of Hg(II) ion on the AAO-polyrhodanine membrane were analyzed with Langmuir and Freundlich isotherm models. The adsorption rate of Hg(II) ion on the membrane was obeyed by a pseudo-second order equation, indicating the chemical adsorption. The maximum removal capacity of Hg(II) ion onto the fabricated membrane was measured to be 4.2 mmol/g polymer. The AAO-polyrhodanine membrane had also remarkable uptake performance toward Ag(I) and Pb(II) ions. Furthermore, the polyrhodanine modified membrane could be recycled after recovery process. These results demonstrated that the polyrhodanine modified AAO membrane provided potential applications for removing the hazardous heavy metal ions from wastewater. Copyright © 2011 Elsevier B.V. All rights reserved.

  9. Sex-Dependent Depression-Like Behavior Induced by Respiratory Administration of Aluminum Oxide Nanoparticles

    Directory of Open Access Journals (Sweden)

    Xin Zhang

    2015-12-01

    Full Text Available Ultrafine aluminum oxide, which are abundant in ambient and involved occupational environments, are associated with neurobehavioral alterations. However, few studies have focused on the effect of sex differences following exposure to environmental Al2O3 ultrafine particles. In the present study, male and female mice were exposed to Al2O3 nanoparticles (NPs through a respiratory route. Only the female mice showed depression-like behavior. Although no obvious pathological changes were observed in mice brain tissues, the neurotransmitter and voltage-gated ion channel related gene expression, as well as the small molecule metabolites in the cerebral cortex, were differentially modulated between male and female mice. Both mental disorder-involved gene expression levels and metabolomics analysis results strongly suggested that glutamate pathways were implicated in sex differentiation induced by Al2O3 NPs. Results demonstrated the potential mechanism of environmental ultrafine particle-induced depression-like behavior and the importance of sex dimorphism in the toxic research of environmental chemicals.

  10. Heavy metal ion removal by thiol functionalized aluminum oxide hydroxide nanowhiskers

    Science.gov (United States)

    Xia, Zhiyong; Baird, Lance; Zimmerman, Natasha; Yeager, Matthew

    2017-09-01

    In this study, we developed a cost effective method of using thiol functionalized γ-aluminum oxide hydroxide (γ-AlOOH) filters for removing three key heavy metals from water: mercury, lead, and cadmium under non-concomitant conditions. Compared to non-thiol treated γ-AlOOH filters, the introduction of thiol functional groups greatly improved the heavy metal removal efficiency under both static and dynamic filtration conditions. The adsorption kinetics of thiol functionalized γ-AlOOH were investigated using the Lagergren first order and pseudo-second order kinetics models; whereas the isothermal adsorption behavior of these membranes was revealed through the Langmuir and Freundlich models. Heavy metal concentration was quantified by Inductively Coupled Plasma-Mass Spectroscopy, and the thiol level on γ-AlOOH surface was measured by a colorimetric assay using Ellman's reagent. X-ray photoelectron spectroscopy was used to further address the surface sulfur state on the membranes after heavy metal exposure. Mechanisms for heavy metal adsorption were also discussed.

  11. Microstructure and properties of ceramic coatings prepared by micro-arc oxidation on 7075 aluminum alloy

    Science.gov (United States)

    Cao, G. P.; Song, R. G.

    2018-02-01

    Micro-arc oxidation (MAO) ceramic coatings were prepared in silicate-based electrolyte on 7075 aluminum alloy. The effects of current density on microstructure and properties of the MAO coatings were studied by scanning electron microscopy (SEM), stereoscopic microscopy, x-ray diffraction (XRD), electrochemical tests as well as tribological and wear tests. The results showed that the current density plays an important role in affecting the quality of the MAO coatings. XRD results showed that the α-Al2O3 phase first increased then decreased with increasing the current density, which matched well with the micro-hardness test and the wearing test results. On the other hand, the coalescent strength measurements revealed that the coating prepared at the current density of 12 A dm‑2 is of the highest adhesion force. The potentiodynamic polarization test proved that the coating obtained under 10 A dm‑2 exhibits the best corrosion resistance, which is directly related to the morphology of coating.

  12. Novel Aluminum Oxide-Impregnated Carbon Nanotube Membrane for the Removal of Cadmium from Aqueous Solution

    Directory of Open Access Journals (Sweden)

    Ihsanullah

    2017-09-01

    Full Text Available An aluminum oxide-impregnated carbon nanotube (CNT-Al2O3 membrane was developed via a novel approach and used in the removal of toxic metal cadmium ions, Cd(II. The membrane did not require any binder to hold the carbon nanotubes (CNTs together. Instead, the Al2O3 particles impregnated on the surface of the CNTs were sintered together during heating at 1400 °C. Impregnated CNTs were characterized using XRD, while the CNT-Al2O3 membrane was characterized using scanning electron microscopy (SEM. Water flux, contact angle, and porosity measurements were performed on the membrane prior to the Cd(II ion removal experiment, which was conducted in a specially devised continuous filtration system. The results demonstrated the extreme hydrophilic behavior of the developed membrane, which yielded a high water flux through the membrane. The filtration system removed 84% of the Cd(II ions at pH 7 using CNT membrane with 10% Al2O3 loading. A maximum adsorption capacity of 54 mg/g was predicted by the Langmuir isotherm model for the CNT membrane with 10% Al2O3 loading. This high adsorption capacity indicated that adsorption was the main mechanism involved in the removal of Cd(II ions.

  13. Aluminum oxide passivated radial junction sub-micrometre pillar array textured silicon solar cells

    Science.gov (United States)

    Pudasaini, Pushpa Raj; Elam, David; Ayon, Arturo A.

    2013-06-01

    We report radial, p-n junction, sub-micrometre, pillar array textured solar cells, fabricated on an n-type Czochralski silicon wafer. Relatively simple processing schemes such as metal-assisted chemical etching and spin on dopant techniques were employed for the fabrication of the proposed solar cells. Atomic layer deposition (ALD) grown aluminum oxide (Al2O3) was employed as a surface passivation layer on the B-doped emitter surface. In spite of the fact that the sub-micrometre pillar array textured surface has a relatively high surface-to-volume ratio, we observed an open circuit voltage (VOC) and a short circuit current density (JSC) as high as 572 mV and 29.9 mA cm-2, respectively, which leads to a power conversion efficiency in excess of 11.30%, for the optimized structure of the solar cell described herein. Broadband omnidirectional antireflection effects along with the light trapping property of the sub-micrometre, pillar array textured surface and the excellent passivation quality of the ALD-grown Al2O3 on the B-doped emitter surface were responsible for the enhanced electrical performance of the proposed solar cells.

  14. Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide

    Science.gov (United States)

    Yap, Wui Chung; Jiang, Hao; Liu, Jialun; Xia, Qiangfei; Zhu, Wenjuan

    2017-07-01

    In this letter, we demonstrate ferroelectric memory devices with monolayer molybdenum disulfide (MoS2) as the channel material and aluminum (Al)-doped hafnium oxide (HfO2) as the ferroelectric gate dielectric. Metal-ferroelectric-metal capacitors with 16 nm thick Al-doped HfO2 are fabricated, and a remnant polarization of 3 μC/cm2 under a program/erase voltage of 5 V is observed. The capability of potential 10 years data retention was estimated using extrapolation of the experimental data. Ferroelectric transistors based on embedded ferroelectric HfO2 and MoS2 grown by chemical vapor deposition are fabricated. Clockwise hysteresis is observed at low program/erase voltages due to slow bulk traps located near the 2D/dielectric interface, while counterclockwise hysteresis is observed at high program/erase voltages due to ferroelectric polarization. In addition, the endurances of the devices are tested, and the effects associated with ferroelectric materials, such as the wake-up effect and polarization fatigue, are observed. Reliable writing/reading in MoS2/Al-doped HfO2 ferroelectric transistors over 2 × 104 cycles is achieved. This research can potentially lead to advances of two-dimensional (2D) materials in low-power logic and memory applications.

  15. Mechanistic Study of Adsorption of Acid Orange-7 over Aluminum Oxide Nanoparticles

    Directory of Open Access Journals (Sweden)

    Ekta Khosla

    2013-01-01

    Full Text Available The adsorption behavior of acid orange-7 (AO-7 on aluminum oxide nanoparticles (ANP generated by sol-gel method has been investigated to understand the physicochemical process involved and to explore the potential use of nano particles in textile effluent treatment and management. The results revealed that ANP can remove AO-7 dye up to 97.6 mg/g at 303 K. The adsorption process is found to be pH dependent and the optimum pH obtained is 2.0. The equilibrium was established in 1 h. Langmuir, Freundlich, and Temkin Isotherm models were applied on the system. Scanning electron microscopic analysis reveals eye-catching nanoporous morphology of the material. The results of FTIR spectroscopy reveal that the process is electrostatic complexation mechanism driven. XRD studies revealed nanocrystalline structure of ANP. BET surface area measurement suggests high pore volume and surface area of adsorbent. The kinetic measurements suggest pseudo-second-order kinetic processes. The thermodynamic measurements suggest that all processes are endothermic accompanied with negative ΔG° and positive ΔS°, ΔH°.

  16. Preparation and thermal properties of form-stable palmitic acid/active aluminum oxide composites as phase change materials for latent heat storage

    International Nuclear Information System (INIS)

    Fang, Guiyin; Li, Hui; Cao, Lei; Shan, Feng

    2012-01-01

    Form-stable palmitic acid (PA)/active aluminum oxide composites as phase change materials were prepared by adsorbing liquid palmitic acid into active aluminum oxide. In the composites, the palmitic acid was used as latent heat storage materials, and the active aluminum oxide was used as supporting material. Fourier transformation infrared spectroscope (FT-IR), X-ray diffractometer (XRD) and scanning electronic microscope (SEM) were used to determine the chemical structure, crystalloid phase and microstructure of the composites, respectively. The thermal properties and thermal stability were investigated by a differential scanning calorimeter (DSC) and a thermogravimetry analyzer (TGA). The FT-IR analyses results indicated that there is no chemical interaction between the palmitic acid and active aluminum oxide. The SEM results showed that the palmitic acid was well adsorbed into porous network of the active aluminum oxide. The DSC results indicated that the composites melt at 60.25 °C with a latent heat of 84.48 kJ kg −1 and solidify at 56.86 °C with a latent heat of 78.79 kJ kg −1 when the mass ratio of the PA to active aluminum oxide is 0.9:1. Compared with that of the PA, the melting and solidifying time of the composites CPCM5 was reduced by 20.6% and 21.4% because of the increased heat transfer rate through EG addition. The TGA results showed that the active aluminum oxide can improve the thermal stability of the composites. -- Highlights: ► Form-stable PA/active aluminum oxide composites as PCMs were prepared. ► Chemical structure, crystalloid phase and microstructure of composites were determined. ► Thermal properties and thermal stability of the composites were investigated. ► Expanded graphite can improve thermal conductivity of the composites.

  17. Structural characterization of sputtered indium oxide films deposited at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hotovy, I., E-mail: ivan.hotovy@stuba.s [Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava (Slovakia); Pezoldt, J. [FG Nanotechnologie, Institut fuer Mikro- und Nanoelektronik, TU Ilmenau, Postfach 100565, 98684 Ilmenau (Germany); Kadlecikova, M. [Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava (Slovakia); Kups, T.; Spiess, L. [FG Werkstoffe der Elektrotechnik, Institut fuer Werkstofftechnik, TU Ilmeau, Postfach 100565, 98684 Ilmenau (Germany); Breza, J. [Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava (Slovakia); Sakalauskas, E.; Goldhahn, R. [FG Exprimentalphysik I, Institut fuer Physik, TU Ilmenau, Postfach 100565, 98684 Ilmenau (Germany); Rehacek, V. [Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava (Slovakia)

    2010-06-01

    Structural evolution of indium oxide thin films deposited at room temperature by reactive magnetron sputtering and annealing in a reducing atmosphere were investigated. The as deposited indium oxide (In{sub 2}O{sub 3}) films showed a dominating randomly oriented nanocrystalline structure of cubic In{sub 2}O{sub 3}. The grain size decreased with increasing oxygen concentration in the plasma. Annealing in reducing atmospheres (vacuum, nitrogen and argon), besides improving the crystallinity, led to a partial cubic to rhombohedral phase transition in the indium oxide films. Annealing improved the optical properties of the indium oxide film and shifted the absorption edge to higher energies.

  18. Spin-Coated vs. Electrodeposited Mn Oxide Films as Water Oxidation Catalysts

    Directory of Open Access Journals (Sweden)

    Simelys Hernández

    2016-04-01

    Full Text Available Manganese oxides (MnOx, being active, inexpensive and low-toxicity materials, are considered promising water oxidation catalysts (WOCs. This work reports the preparation and the physico-chemical and electrochemical characterization of spin-coated (SC films of commercial Mn2O3, Mn3O4 and MnO2 powders. Spin coating consists of few preparation steps and employs green chemicals (i.e., ethanol, acetic acid, polyethylene oxide and water. To the best of our knowledge, this is the first time SC has been used for the preparation of stable powder-based WOCs electrodes. For comparison, MnOx films were also prepared by means of electrodeposition (ED and tested under the same conditions, at neutral pH. Particular interest was given to α-Mn2O3-based films, since Mn (III species play a crucial role in the electrocatalytic oxidation of water. To this end, MnO2-based SC and ED films were calcined at 500 °C, in order to obtain the desired α-Mn2O3 crystalline phase. Electrochemical impedance spectroscopy (EIS measurements were performed to study both electrode charge transport properties and electrode–electrolyte charge transfer kinetics. Long-term stability tests and oxygen/hydrogen evolution measurements were also made on the highest-performing samples and their faradaic efficiencies were quantified, with results higher than 95% for the Mn2O3 SC film, finally showing that the SC technique proposed here is a simple and reliable method to study the electrocatalytic behavior of pre-synthesized WOCs powders.

  19. Spin-Coated vs. Electrodeposited Mn Oxide Films as Water Oxidation Catalysts.

    Science.gov (United States)

    Hernández, Simelys; Ottone, Carminna; Varetti, Sara; Fontana, Marco; Pugliese, Diego; Saracco, Guido; Bonelli, Barbara; Armandi, Marco

    2016-04-19

    Manganese oxides (MnO x ), being active, inexpensive and low-toxicity materials, are considered promising water oxidation catalysts (WOCs). This work reports the preparation and the physico-chemical and electrochemical characterization of spin-coated (SC) films of commercial Mn₂O₃, Mn₃O₄ and MnO₂ powders. Spin coating consists of few preparation steps and employs green chemicals ( i.e. , ethanol, acetic acid, polyethylene oxide and water). To the best of our knowledge, this is the first time SC has been used for the preparation of stable powder-based WOCs electrodes. For comparison, MnO x films were also prepared by means of electrodeposition (ED) and tested under the same conditions, at neutral pH. Particular interest was given to α-Mn₂O₃-based films, since Mn (III) species play a crucial role in the electrocatalytic oxidation of water. To this end, MnO₂-based SC and ED films were calcined at 500 °C, in order to obtain the desired α-Mn₂O₃ crystalline phase. Electrochemical impedance spectroscopy (EIS) measurements were performed to study both electrode charge transport properties and electrode-electrolyte charge transfer kinetics. Long-term stability tests and oxygen/hydrogen evolution measurements were also made on the highest-performing samples and their faradaic efficiencies were quantified, with results higher than 95% for the Mn₂O₃ SC film, finally showing that the SC technique proposed here is a simple and reliable method to study the electrocatalytic behavior of pre-synthesized WOCs powders.

  20. Spin-Coated vs. Electrodeposited Mn Oxide Films as Water Oxidation Catalysts

    Science.gov (United States)

    Hernández, Simelys; Ottone, Carminna; Varetti, Sara; Fontana, Marco; Pugliese, Diego; Saracco, Guido; Bonelli, Barbara; Armandi, Marco

    2016-01-01

    Manganese oxides (MnOx), being active, inexpensive and low-toxicity materials, are considered promising water oxidation catalysts (WOCs). This work reports the preparation and the physico-chemical and electrochemical characterization of spin-coated (SC) films of commercial Mn2O3, Mn3O4 and MnO2 powders. Spin coating consists of few preparation steps and employs green chemicals (i.e., ethanol, acetic acid, polyethylene oxide and water). To the best of our knowledge, this is the first time SC has been used for the preparation of stable powder-based WOCs electrodes. For comparison, MnOx films were also prepared by means of electrodeposition (ED) and tested under the same conditions, at neutral pH. Particular interest was given to α-Mn2O3-based films, since Mn (III) species play a crucial role in the electrocatalytic oxidation of water. To this end, MnO2-based SC and ED films were calcined at 500 °C, in order to obtain the desired α-Mn2O3 crystalline phase. Electrochemical impedance spectroscopy (EIS) measurements were performed to study both electrode charge transport properties and electrode–electrolyte charge transfer kinetics. Long-term stability tests and oxygen/hydrogen evolution measurements were also made on the highest-performing samples and their faradaic efficiencies were quantified, with results higher than 95% for the Mn2O3 SC film, finally showing that the SC technique proposed here is a simple and reliable method to study the electrocatalytic behavior of pre-synthesized WOCs powders. PMID:28773419

  1. Effects of iron content on electrical resistivity of oxide films on Zr-base alloys

    International Nuclear Information System (INIS)

    Kubo, Toshio; Uno, Masayoshi

    1991-01-01

    Measurements of electrical resistivity were made for oxide films formed by anodic oxidation and steam oxidation (400degC/12 h) on Zr plates with different Fe contents. When the Fe content was higher than about 1,000 ppm the electrical resistivity of the steam oxide films was almost equivalent to that of the anodic oxide films, while at lower Fe content the former exhibited lower electrical resistivity than the latter by about 1∼3 orders of magnitude. The anodic oxide film was an almost homogeneous single oxide layer. The steam oxide films, on the other hand, were composed of duplex oxide layers. The oxide layer formed in the vicinity of the oxide/metal interface had higher electrical resistivity than the near-surface oxide layer by about 1∼4 orders of magnitude. The oxide layer in the vicinity of the interface could act as a protective film against corrosion and its electrical resistivity is one important factor controlling the layer protectiveness. The electrical resistivity of the oxide/metal interfacial layer was strongly dependent on the Fe content. One possible reason for Fe to improve the corrosion resistance is that Fe ions would tend to stabilize the tetragonal (or cubic) phase and consequently suppress the formation of open pores and cracks in the interfacial layer. (author)

  2. Electrical behavior of amide functionalized graphene oxide and graphene oxide films annealed at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Rani, Sumita; Kumar, Mukesh, E-mail: kumarmukesh@gmail.com; Kumar, Dinesh; Sharma, Sumit

    2015-06-30

    Films of graphene oxide (GO) and amide functionalized graphene oxides (AGOs) were deposited on SiO{sub 2}/Si(100) by spin coating and were thermally annealed at different temperatures. Sheet resistance of GO and AGOs films was measured using four probe resistivity method. GO an insulator at room temperature, exhibits decrease in sheet resistance with increase in annealing temperature. However, AGOs' low sheet resistance (250.43 Ω) at room temperature further decreases to 39.26 Ω after annealing at 800 °C. It was observed that the sheet resistance of GO was more than AGOs up to 700 °C, but effect was reversed after annealing at higher temperature. At higher annealing temperatures the oxygen functionality reduces in GO and sheet resistance decreases. Sheet resistance was found to be annealing time dependent. Longer duration of annealing at a particular temperature results in decrease of sheet resistance. - Highlights: • Amide functionalized graphene oxides (AGOs) were synthesized at room temperature (RT). • AGO films have low sheet resistance at RT as compared to graphene oxide (GO). • Fast decrease in the sheet resistance of GO with annealing as compared to AGOs • AGOs were found to be highly dispersible in polar solvents.

  3. Plasma Enhanced Complete Oxidation of Ultrathin Epitaxial Praseodymia Films on Si(111

    Directory of Open Access Journals (Sweden)

    Olga Kuschel

    2015-09-01

    Full Text Available Praseodymia films have been exposed to oxygen plasma at room temperature after deposition on Si(111 via molecular beam epitaxy. Different parameters as film thickness, exposure time and flux during plasma treatment have been varied to study their influence on the oxygen plasma oxidation process. The surface near regions have been investigated by means of X-ray photoelectron spectroscopy showing that the plasma treatment transforms the stoichiometry of the films from Pr2O3 to PrO2. Closer inspection of the bulk properties of the films by means of synchrotron radiation based X-ray reflectometry and diffraction confirms this transformation if the films are thicker than some critical thickness of 6 nm. The layer distance of these films is extremely small verifying the completeness of the plasma oxidation process. Thinner films, however, cannot be transformed completely. For all films, less oxidized very thin interlayers are detected by these experimental techniques.

  4. Oxidizing annealing effects on VO{sub 2} films with different microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Dou, Yan-Kun, E-mail: douyankun3@163.com; Li, Jing-Bo, E-mail: lijb@bit.edu.cn; Cao, Mao-Sheng, E-mail: caomaosheng@bit.edu.cn; Su, De-Zhi, E-mail: sudezhihefish@126.com; Rehman, Fida, E-mail: fida_ph@yahoo.com; Zhang, Jia-Song, E-mail: zhangjiasong@126.com; Jin, Hai-Bo, E-mail: hbjin@bit.edu.cn

    2015-08-01

    Vanadium dioxide (VO{sub 2}) films have been prepared by direct-current magnetron sputter deposition on m-, a-, and r-plane sapphire substrates. The obtained VO{sub 2} films display different microstructures depending on the orientation of sapphire substrates, i.e. mixed microstructure of striped grains and equiaxed grains on m-sapphire, big equiaxed grains on a-sapphire and fine-grained microstructure on r-sapphire. The VO{sub 2} films were treated by the processes of oxidation in air. The electric resistance and infrared transmittance of the oxidized films were characterized to examine performance characteristics of VO{sub 2} films with different microstructures in oxidation environment. The oxidized VO{sub 2} films on m-sapphire exhibit better electrical performance than the other two films. After air oxidization for 600 s at 450 °C, the VO{sub 2} films on m-sapphire show a resistance change of 4 orders of magnitude over the semiconductor-to-metal transition. The oxidized VO{sub 2} films on a-sapphire have the highest optical modulation efficiency in infrared region compared to other samples. The different performance characteristics of VO{sub 2} films are understood in terms of microstructures, i.e. grain size, grain shape, and oxygen vacancies. The findings reveal the correlation of microstructures and performances of VO{sub 2} films, and provide useful knowledge for the design of VO{sub 2} materials to different applications.

  5. Nanoscale reduction of graphene oxide thin films and its characterization

    KAUST Repository

    Lorenzoni, M.

    2015-06-29

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material. © 2015 IOP Publishing Ltd.

  6. Nanoscale reduction of graphene oxide thin films and its characterization.

    Science.gov (United States)

    Lorenzoni, M; Giugni, A; Di Fabrizio, E; Pérez-Murano, Francesc; Mescola, A; Torre, B

    2015-07-17

    In this paper, we report on a method to reduce thin films of graphene oxide (GO) to a spatial resolution better than 100 nm over several tens of micrometers by means of an electrochemical scanning probe based lithography. In situ tip-current measurements show that an edged drop in electrical resistance characterizes the reduced areas, and that the reduction process is, to a good approximation, proportional to the applied bias between the onset voltage and the saturation thresholds. An atomic force microscope (AFM) quantifies the drop of the surface height for the reduced profile due to the loss of oxygen. Complementarily, lateral force microscopy reveals a homogeneous friction coefficient of the reduced regions that is remarkably lower than that of native graphene oxide, confirming a chemical change in the patterned region. Micro Raman spectroscopy, which provides access to insights into the chemical process, allows one to quantify the restoration and de-oxidation of the graphitic network driven by the electrochemical reduction and to determine characteristic length scales. It also confirms the homogeneity of the process over wide areas. The results shown were obtained from accurate analysis of the shift, intensity and width of Raman peaks for the main vibrational bands of GO and reduced graphene oxide (rGO) mapped over large areas. Concerning multilayered GO thin films obtained by drop-casting we have demonstrated an unprecedented lateral resolution in ambient conditions as well as an improved control, characterization and understanding of the reduction process occurring in GO randomly folded multilayers, useful for large-scale processing of graphene-based material.

  7. Intrinsic stress of bismuth oxide thin films: effect of vapour chopping and air ageing

    International Nuclear Information System (INIS)

    Patil, R B; Puri, R K; Puri, V

    2008-01-01

    Bismuth oxide thin films of thickness 1000 A 0 have been prepared by thermal oxidation (in air) of vacuum evaporated bismuth thin films (on glass substrate) at different oxidation temperatures and duration. Both the vapour chopped and nonchopped bismuth oxide thin films showed polycrystalline and polymorphic structure. The monoclinic bismuth oxide was found to be predominant in both the cases. The effect of vapour chopping and air exposure for 40 days on the intrinsic stress of bismuth oxide thin films has been studied. The vapour chopped films showed low (3.92 - 4.80 x 10 9 N/m 2 ) intrinsic stress than those of nonchopped bismuth oxide thin films (5.77 - 6.74 x 10 9 N/m 2 ). Intrinsic stress was found to increase due to air ageing. The effect of air ageing on the vapour chopped films was found low. The vapour chopped films showed higher packing density. Higher the packing density, lower the film will age. The process of chopping vapour flow creates films with less inhomogenety i.e. a low concentration of flaws and non-planar defects which results in lower intrinsic stress

  8. Ceriodaphnia dubia as a Potential Bio-Indicator for Assessing Acute Aluminum Oxide Nanoparticle Toxicity in Fresh Water Environment

    Science.gov (United States)

    Pakrashi, Sunandan; Dalai, Swayamprava; Humayun, Ahmed; Chakravarty, Sujay; Chandrasekaran, Natarajan; Mukherjee, Amitava

    2013-01-01

    Growing nanomaterials based consumer applications have raised concerns about their potential release into the aquatic ecosystems and the consequent toxicological impacts. So environmental monitoring of the nanomaterials in aqueous systems becomes imperative. The current study reveals the potential of Ceriodaphnia dubia (C. dubia) as a bio-indicator for aluminum oxide nanoparticles in a fresh water aquatic ecosystem where it occupies an important ecological niche as a primary consumer. This study aims to investigate the aluminium oxide nanoparticle induced acute toxicity on Ceriodaphnia dubia in a freshwater system. The bioavailability of the aluminum oxide nanoparticles has been studied with respect to their aggregation behavior in the system and correlated with the toxicity endpoints. The oxidative stress generated by the particles contributed greatly toward their toxicity. The crucial role of leached aluminium ion mediated toxicity in the later phases (48 h and 72 h) in conjunction with the effects from the nano-sized particles in the initial phases (24 h) puts forth the dynamics of nanotoxicity in the test system. The internalization of nanoparticles (both gross and systemic uptake) as substantiated through the transmission electron microscopy (TEM) and inductively coupled plasma optical emission spectral (ICP-OES) analysis was another major contributor toward acute toxicity. Concluding the present study, Ceriodaphnia dubia can be a promising candidate for bio-monitoring the aluminium oxide nanoparticles in a fresh water system. PMID:24040143

  9. Ceriodaphnia dubia as a potential bio-indicator for assessing acute aluminum oxide nanoparticle toxicity in fresh water environment.

    Directory of Open Access Journals (Sweden)

    Sunandan Pakrashi

    Full Text Available Growing nanomaterials based consumer applications have raised concerns about their potential release into the aquatic ecosystems and the consequent toxicological impacts. So environmental monitoring of the nanomaterials in aqueous systems becomes imperative. The current study reveals the potential of Ceriodaphnia dubia (C. dubia as a bio-indicator for aluminum oxide nanoparticles in a fresh water aquatic ecosystem where it occupies an important ecological niche as a primary consumer. This study aims to investigate the aluminium oxide nanoparticle induced acute toxicity on Ceriodaphnia dubia in a freshwater system. The bioavailability of the aluminum oxide nanoparticles has been studied with respect to their aggregation behavior in the system and correlated with the toxicity endpoints. The oxidative stress generated by the particles contributed greatly toward their toxicity. The crucial role of leached aluminium ion mediated toxicity in the later phases (48 h and 72 h in conjunction with the effects from the nano-sized particles in the initial phases (24 h puts forth the dynamics of nanotoxicity in the test system. The internalization of nanoparticles (both gross and systemic uptake as substantiated through the transmission electron microscopy (TEM and inductively coupled plasma optical emission spectral (ICP-OES analysis was another major contributor toward acute toxicity. Concluding the present study, Ceriodaphnia dubia can be a promising candidate for bio-monitoring the aluminium oxide nanoparticles in a fresh water system.

  10. Mechanochemical reactions and strengthening in epoxy-cast aluminum iron-oxide mixtures

    Science.gov (United States)

    Ferranti, Louis, Jr.

    2007-12-01

    -viscoplastic deformation and brittle fracture behaviors. Significant elastic and plastic deformation during both loading and unloading stages is observed, with approximately 50% elastic recovery of total axial strain occurring rapidly (tens of microseconds) after impact. Coupling high-speed camera images and velocity interferometry measurements shows that the elastic recovery coincides with peak axial strain and the elastic and plastic wave interaction. The incorporation of nano-scale aluminum particles enhances the dynamic stress-strain response and significantly improves the composites' resilience to impact as compared to pure epoxy, and with the use of micron-scale aluminum particles. Post-mortem analysis of recovered Taylor impacted specimens indicates evidence of early stages of strain-induced reactions occurring at select stress, strain, and strain rates. The observed reaction products correlate with results of thermal analysis, which include DTA and in situ high temperature x-ray diffraction (HTXRD). Central to this study was the interaction of metal-oxide powder mixtures with the epoxy matrix and how their chemical and mechanical properties balance to form a structural energetic material system. The study focuses on describing the underlying principles governing the deformation and fracture behavior, processing characteristics of epoxy-cast Al+Fe2O3 powder mixtures, mechanochemical sensitivity, and reaction response. In order to accomplish this, the effects of size, morphology, and distribution of particles were evaluated based on mechanical and chemical response to high pressures and combined stress-strain states using time-resolved measurements.

  11. Spray Pyrolyzed Polycrystalline Tin Oxide Thin Film as Hydrogen Sensor

    Directory of Open Access Journals (Sweden)

    Ganesh E. Patil

    2010-09-01

    Full Text Available Polycrystalline tin oxide (SnO2 thin film was prepared by using simple and inexpensive spray pyrolysis technique (SPT. The film was characterized for their phase and morphology by X-ray diffraction (XRD and scanning electron microscopy (SEM, respectively. The crystallite size calculated from the XRD pattern is 84 nm. Conductance responses of the polycrystalline SnO2 were measured towards gases like hydrogen (H2, liquefied petroleum gas (LPG, ethanol vapors (C2H5OH, NH3, CO, CO2, Cl2 and O2. The gas sensing characteristics were obtained by measuring the sensor response as a function of various controlling factors like operating temperature, operating voltages (1 V, 5 V, 10 V 15 V, 20 V and 25 V and concentration of gases. The sensor response measurement showed that the SnO2 has maximum response to hydrogen. Furthermore; the SnO2 based sensor exhibited fast response and good recovery towards hydrogen at temperature 150 oC. The result of response towards H2 reveals that SnO2 thin film prepared by SPT would be a suitable material for the fabrication of the hydrogen sensor.

  12. Oxidation Effect in Octahedral Hafnium Disulfide Thin Film.

    Science.gov (United States)

    Chae, Sang Hoon; Jin, Youngjo; Kim, Tae Soo; Chung, Dong Seob; Na, Hyunyeong; Nam, Honggi; Kim, Hyun; Perello, David J; Jeong, Hye Yun; Ly, Thuc Hue; Lee, Young Hee

    2016-01-26

    Atomically smooth van der Waals materials are structurally stable in a monolayer and a few layers but are susceptible to oxygen-rich environments. In particular, recently emerging materials such as black phosphorus and perovskite have revealed stronger environmental sensitivity than other two-dimensional layered materials, often obscuring the interesting intrinsic electronic and optical properties. Unleashing the true potential of these materials requires oxidation-free sample preparation that protects thin flakes from air exposure. Here, we fabricated few-layer hafnium disulfide (HfS2) field effect transistors (FETs) using an integrated vacuum cluster system and study their electronic properties and stability under ambient conditions. By performing all the device fabrication and characterization procedure under an oxygen- and moisture-free environment, we found that few-layer AA-stacking HfS2-FETs display excellent field effect responses (Ion/Ioff ≈ 10(7)) with reduced hysteresis compared to the FETs prepared under ambient conditions. Oxidation of HfS2 occurs uniformly over the entire area, increasing the film thickness by 250% at a prolonged oxidation time of >120 h, while defects on the surface are the preferential initial oxidation sites. We further demonstrated that the stability of the device in air is significantly improved by passivating FETs with BN in a vacuum cluster.

  13. Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal - oxide - semiconductor field-effect transistors: Effective electron mobility

    International Nuclear Information System (INIS)

    Ragnarsson, L.-A degree.; Guha, S.; Copel, M.; Cartier, E.; Bojarczuk, N. A.; Karasinski, J.

    2001-01-01

    We report on high effective mobilities in yttrium-oxide-based n-channel metal - oxide - semiconductor field-effect transistors (MOSFETs) with aluminum gates. The yttrium oxide was grown in ultrahigh vacuum using a reactive atomic-beam-deposition system. Medium-energy ion-scattering studies indicate an oxide with an approximate composition of Y 2 O 3 on top of a thin layer of interfacial SiO 2 . The thickness of this interfacial oxide as well as the effective mobility are found to be dependent on the postgrowth anneal conditions. Optimum conditions result in mobilities approaching that of SiO 2 -based MOSFETs at higher fields with peak mobilities at approximately 210 cm 2 /Vs. [copyright] 2001 American Institute of Physics

  14. Electrochromic properties of electrodeposited tungsten oxide (WO3) thin film

    Science.gov (United States)

    Dalavi, D. S.; Kalagi, S. S.; Mali, S. S.; More, A. J.; Patil, R. S.; Patil, P. S.

    2012-06-01

    In this work, we report on a potentiostatic electrochemical procedure employing an ethanolic solution of peroxotungstic acid yielded tungsten oxide (WO3) films specifically for transmissive electrochromic devices (ECDs) such as "smart windows". WO3 film was confirmed from the binding energy determination by X-ray photoelectron spectroscopic studies. The diffusion coefficient during intercalation and deintercalation was found to be 2.59×10-10 and 2.40×10-10 cm2/C. Electrodeposited WO3 produce high color/bleach transmittance difference up to 74% at 630 nm. On reduction of WO3, the CIELAB 1931 2% color space coordinates show the transition from colorless to the deep blue state (L=95.18, a=2.12, b=0.3138, and L=57.78, a=-21.79, b=0.244) with steady decrease in relative luminance. The highest coloration efficiency (CE) of 92 cm2/C and good response time of 10.28 for coloration (reduction) and 3.2 s for bleaching (oxidation) was observed with an excellent reversibility of 89%.

  15. Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer

    Directory of Open Access Journals (Sweden)

    Min-Hang Weng

    2014-01-01

    Full Text Available We investigated the capping layer effect of SiNx (silicon nitride on the microstructure, electrical, and optical properties of poly-Si (polycrystalline silicon prepared by aluminum induced crystallization (AIC. The primary multilayer structure comprised Al (30 nm/SiNx (20 nm/a-Si (amorphous silicon layer (100 nm/ITO coated glass and was then annealed in a low annealing temperature of 350°C with different annealing times, 15, 30, 45, and 60 min. The crystallization properties were analyzed and verified by X-ray diffraction (XRD and Raman spectra. The grain growth was analyzed via optical microscope (OM and scanning electron microscopy (SEM. The improved electrical properties such as Hall mobility, resistivity, and dark conductivity were investigated by using Hall and current-voltage (I-V measurements. The results show that the amorphous silicon film has been effectively induced even at a low temperature of 350°C and a short annealing time of 15 min and indicate that the SiNx capping layer can improve the grain growth and reduce the metal content in the induced poly-Si film. It is found that the large grain size is over 20 μm and the carrier mobility values are over 80 cm2/V-s.

  16. Fabrication of superhydrophobic nano-aluminum films on stainless steel meshes by electrophoretic deposition for oil-water separation

    Science.gov (United States)

    Xu, Zhe; Jiang, Deyi; Wei, Zhibo; Chen, Jie; Jing, Jianfeng

    2018-01-01

    Stainless steel meshes with superhydrophobic surfaces were successfully fabricated via a facile electrophoretic deposition process. The surface morphology and chemical compositions were characterized by a field emission scanning electron microscope (FE-SEM), energy-dispersive X-ray spectroscope (EDS), X-ray diffraction (XRD) and fourier-transform infrared spectrophotometer (FTIR). After stearic acid modification, the obtained nano-aluminum films on stainless steel meshes showed an excellent superhydrophobic properties with a water contact angle of 160° ± 1.2° and a water sliding angle of less than 5°. In addition, on the basis of the superhydrophobic meshes, a simple, continuous oil-water separation apparatus was designed, and the oil-water separation efficiency was up to 95.8% ± 0.9%. Meanwhile, after 20 oil-water separation cycles, the separation efficiency without significant reduction suggested the stable performance of superhydrophobic stainless steel meshes on the oil-water separation. Moreover, the flow rate of oil-water mixture and effective separation length were investigated to determine their effects on the oil-water separation efficiency, respectively. Our work provides a cost-efficient method to prepare stable superhydrophobic nano-Al films on stainless steel meshes, and it has promising practical applications on oil-water separation.

  17. Angular reflectance of suspended gold, aluminum and silver nanospheres on a gold film: Effects of concentration and size distribution

    International Nuclear Information System (INIS)

    Aslan, Mustafa M.; Wriedt, Thomas

    2010-01-01

    In this article, we describe a parametric study of the effects of the size distribution (SD) and the concentration of nanospheres in ethanol on the angular reflectance. Calculations are based on an effective medium approach in which the effective dielectric constant of the mixture is obtained using the Maxwell-Garnett formula. The detectable size limits of gold, aluminum, and silver nanospheres on a 50-nm-thick gold film are calculated to investigate the sensitivity of the reflectance to the SD and the concentration of the nanospheres. The following assumptions are made: (1) the total number of particles in the unit volume of suspension is constant, (2) the nanospheres in the suspension on a gold film have a SD with three different concentrations, and (3) there is no agglomeration and the particles have a log-normal SD, where the effective diameter, d eff and the effective variance, ν eff are given. The dependence of the reflectance on the d eff , ν eff , and the width of the SD are also investigated numerically. The angular variation of the reflectance as a function of the incident angle shows a strong dependence on the effective size of the metallic nanospheres. The results confirm that the size of the nanospheres (d eff o and 75 o for a given concentration with a particular SD.

  18. Characterization for rbs of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide

    International Nuclear Information System (INIS)

    Pedrero, E.; Vigil, E.; Zumeta, I.

    1999-01-01

    The depth of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide was characterized using Rutherford Backscattering Spectrometry. Film depths are compared in function of bath and suspension parameters

  19. Growth of aluminum oxide on silicon carbide with an atomically sharp interface

    DEFF Research Database (Denmark)

    Silva, Ana Gomes; Pedersen, Kjeld; Li, Zheshen

    2017-01-01

    The development of SiC wafers with properties suitable for electronic device fabrication is now well established commercially. A critical issue for developing metal-oxide-semiconductor field effect transistor devices of SiC is the choice of dielectric materials for surface passivation and insulat......The development of SiC wafers with properties suitable for electronic device fabrication is now well established commercially. A critical issue for developing metal-oxide-semiconductor field effect transistor devices of SiC is the choice of dielectric materials for surface passivation...... this system up to around 600 °C (all in ultrahigh vacuum). This converts all the SiO2 into a uniform layer of Al2O3 with an atomically sharp interface between the Al2O3 and the Si surface. In the present work, the same procedures are applied to form Al2O3 on a SiC film grown on top of Si (111). The results...

  20. Characterization of aluminum nitride based films with high resolution X-ray fluorescence spectroscopy

    Science.gov (United States)

    Anagnostopoulos, D. F.; Siozios, A.; Patsalas, P.

    2018-02-01

    X-ray fluorescence spectra of Al based films are measured, using a lab-scale wavelength dispersive flat crystal spectrometer. Various structures of AlN films were studied, like single layered, capped, stratified, nanostructured, crystalline, or amorphous. By optimizing the set-up for enhanced energy resolution and detection efficiency, the measured line shapes of Κα, Kβ, and KLL radiative Auger transitions are shown to be adequately detailed to allow chemical characterization. The chemistry identification is based on the pattern comparison of the emitted line shape from the chemically unknown film and the reference line shapes from standard materials, recorded under identical experimental conditions. The ultimate strength of lab-scale high resolution X-ray fluorescence spectroscopy on film analysis is verified, in cases that ordinary applied techniques like X-ray photoelectron and X-ray diffraction fail, while the characterization refers to the non-destructive determination of the bulk properties of the film and not to its surface, as the probed depth is in the micrometer range.

  1. Nanostructure of aluminium (Al) - Doped zinc oxide (AZO) thin films

    Science.gov (United States)

    Hussin, Rosniza; Husin, M. Asri

    2017-12-01

    Aluminium (Al)-doped Zinc Oxide (ZnO) was deposited on glass substrates by using the sol-gel dip coating technique. Next, AZO sol-gel solution was produced via sol-gel method. Al was used as doped element with molar ratios of 1%, 2%, and 3%, while the calcination temperatures were set at 400°C, 500°C, and 600°C for 2 hours. In fact, characterization was carried out in order to determine the effect of calcination temperature and molar ratio of doping by using several techniques, such as X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Field Emission Scanning Electron Microscopy (FESEM), and Ultraviolet-Visible spectroscopy (UV-Vis). XRD was performed to investigate the crystal structure in which the ZnO was in wurtzite hexagonal form. Next, Energy Dispersive Spectroscopy (EDS) was used to determine the composition of thin films where the result revealed the existence of zinc, oxygen, and aluminium. The roughness of the deposited film was later measured by using the AFM approach where the findings indicated increment in RMS from 8.496 nm to 35.883 nm as the temperature was increased. Additionally, FESEM was carried out to look into the microstructure surfaces of the deposited AZO thin film for increased temperature caused the particle to grow bigger for all molar ratio of dopant. Lastly, UV-Vis was conducted to study the optical properties of AZO, in which the result demonstrated that AZO thin film possessed the highest transmittance percentage among all samples above 90% with band gap value that ranged from 3.25 eV to 3.32 eV.

  2. Amperometric detection and electrochemical oxidation of aliphatic amines and ammonia on silver-lead oxide thin-film electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Jisheng [Iowa State Univ., Ames, IA (United States)

    1996-01-08

    This thesis comprises three parts: Electrocatalysis of anodic oxygen-transfer reactions: aliphatic amines at mixed Ag-Pb oxide thin-film electrodes; oxidation of ammonia at anodized Ag-Pb eutectic alloy electrodes; and temperature effects on oxidation of ethylamine, alanine, and aquated ammonia.

  3. Comment on "Tunable Design of Structural Colors Produced by Pseudo-1D Photonic Crystals of Graphene Oxide" and Thin-Film Interference from Dried Graphene Oxide Film.

    Science.gov (United States)

    Hong, Seung-Ho; Song, Jang-Kun

    2017-04-01

    The mechanism of the iridescent color reflection from dried thin graphene oxide (GO) film on Si wafer is clarified. Dissimilarly to the photonic crystalline reflection in aqueous GO dispersion, the color reflection in dried GO film originates from the thin film interference. The peak reflection can reach 23% by optimizing the GO thickness and the substrate. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Investigation on the pure and fluorine doped vanadium oxide thin films deposited by spray pyrolysis method

    Energy Technology Data Exchange (ETDEWEB)

    Margoni, Mudaliar Mahesh; Mathuri, S. [Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur, – 603203 Kancheepuram Dt., Tamil Nadu (India); Ramamurthi, K., E-mail: krmurthin@yahoo.co.in [Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur, – 603203 Kancheepuram Dt., Tamil Nadu (India); Babu, R. Ramesh [Crystal Growth and Thin Film Laboratory, School of Physics, Bharathidasan University, Tiruchirappalli – 620024, Tamil Nadu (India); Sethuraman, K. [School of Physics, Madurai Kamaraj University, Madurai – 625021, Tamil Nadu (India)

    2016-05-01

    Vanadium oxide and fluorine doped vanadium oxide thin films were deposited on the micro-slide glass substrates at 400 °C by spray pyrolysis technique. Vanadium oxide films were deposited using 0.1 M ammonium meta vanadate aqua solution. Precursor solution used to deposit fluorine doped vanadium oxide films was prepared adding separately 5 wt.%, 10 wt.%, 15 wt.% and 20 wt.% of ammonium fluoride with the 0.1 M ammonium meta vanadate aqua solution. X-ray diffraction results showed that the films are in mixed phases of β-V{sub 2}O{sub 5}, V{sub 2}O{sub 5} and V{sub 3}O{sub 7}. Surface morphology and band gap of these films were modified due to different levels of fluorine doping. The average visible transmittance (500–800 nm) of vanadium oxide films is decreased due to low level concentration of fluorine doping. - Highlights: • Addition of a few ml HCl yielded clear precursor aqua solution. • F doped vanadium oxide films were deposited for less concentration of fluorine. • Low level fluorine doping modified the surface morphology of the thin films. • Direct band gap of vanadium oxide film is slightly increased by fluorine doping.

  5. Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Xue Zhang

    2017-12-01

    Full Text Available We investigated the effects of gallium (Ga and tin (Sn compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs. The thermogravimetric analysis results indicate that solution-processed oxide films can be produced via thermal annealing at 500 °C. The oxygen deficiency ratio in the Ga:Sn oxide film increased from 0.18 (Ga oxide and 0.30 (Sn oxide to 0.36, while the X-ray diffraction peaks corresponding to Sn oxide significantly reduced. The Ga:Sn oxide film exhibited smaller grains compared to the nanocrystalline Sn oxide film, while the Ga oxide film exhibited an amorphous morphology. We found that the electrical properties of TFTs significantly improve by mixing Ga and Sn. Here, the optimum weight ratio of the constituents in the mixture of Ga and Sn precursor sols was determined to be 1.0:0.9 (Ga precursor sol:Sn precursor sol for application in the solution-processed Ga:Sn oxide TFTs. In addition, when the Ga(1.0:Sn(0.9 oxide film was thermally annealed at 900 °C, the field-effect mobility of the TFT was notably enhanced from 0.02 to 1.03 cm2/Vs. Therefore, the mixing concentration ratio and annealing temperature are crucial for the chemical and morphological properties of solution-processed Ga:Sn oxide films and for the TFT performance.

  6. Rapid susceptibility testing and microcolony analysis of Candida spp. cultured and imaged on porous aluminum oxide.

    Directory of Open Access Journals (Sweden)

    Colin J Ingham

    Full Text Available BACKGROUND: Acquired resistance to antifungal agents now supports the introduction of susceptibility testing for species-drug combinations for which this was previously thought unnecessary. For pathogenic yeasts, conventional phenotypic testing needs at least 24 h. Culture on a porous aluminum oxide (PAO support combined with microscopy offers a route to more rapid results. METHODS: Microcolonies of Candida species grown on PAO were stained with the fluorogenic dyes Fun-1 and Calcofluor White and then imaged by fluorescence microscopy. Images were captured by a charge-coupled device camera and processed by publicly available software. By this method, the growth of yeasts could be detected and quantified within 2 h. Microcolony imaging was then used to assess the susceptibility of the yeasts to amphotericin B, anidulafungin and caspofungin (3.5 h culture, and voriconazole and itraconazole (7 h culture. SIGNIFICANCE: Overall, the results showed good agreement with EUCAST (86.5% agreement; n = 170 and E-test (85.9% agreement; n = 170. The closest agreement to standard tests was found when testing susceptibility to amphotericin B and echinocandins (88.2 to 91.2% and the least good for the triazoles (79.4 to 82.4%. Furthermore, large datasets on population variation could be rapidly obtained. An analysis of microcolonies revealed subtle effects of antimycotics on resistant strains and below the MIC of sensitive strains, particularly an increase in population heterogeneity and cell density-dependent effects of triazoles. Additionally, the method could be adapted to strain identification via germ tube extension. We suggest PAO culture is a rapid and versatile method that may be usefully adapted to clinical mycology and has research applications.

  7. Proteomic analysis of flooded soybean root exposed to aluminum oxide nanoparticles.

    Science.gov (United States)

    Mustafa, Ghazala; Sakata, Katsumi; Komatsu, Setsuko

    2015-10-14

    Aluminum oxide (Al2O3) nanoparticles are used in agricultural products and cause various adverse growth effects on different plant species. To study the effects of Al2O3 nanoparticles on soybean under flooding stress, a gel-free proteomic technique was used. Morphological analysis revealed that treatment with 50 ppm Al2O3 nanoparticles under flooding stress enhanced soybean growth compared to ZnO and Ag nanoparticles. A total of 172 common proteins that significantly changed in abundance among control, flooding-stressed, and flooding-stressed soybean treated with Al2O3 nanoparticles were mainly related to energy metabolism. Under Al2O3 nanoparticles the energy metabolism was decreased compared to flooding stress. Hierarchical clustering divided identified proteins into four clusters, with proteins related to glycolysis exhibiting the greatest changes in abundance. Al2O3 nanoparticle-responsive proteins were predominantly related to protein synthesis/degradation, glycolysis, and lipid metabolism. mRNA expression analysis of Al2O3 nanoparticle-responsive proteins that displayed a 5-fold change in abundance revealed that NmrA-like negative transcriptional regulator was up-regulated, and flavodoxin-like quinone reductase was down-regulated. Moreover, cell death in root including hypocotyl was less evident in flooding-stressed with Al2O3 nanoparticles compared to flooding-treated soybean. These results suggest that Al2O3 nanoparticles might promote the growth of soybean under flooding stress by regulating energy metabolism and cell death. Copyright © 2015 Elsevier B.V. All rights reserved.

  8. Fracture mechanical investigations about crack resistance behaviour in non-transforming ceramics in particular aluminum oxide

    International Nuclear Information System (INIS)

    Baer, K.K.O.; Kleist, G.; Nickel, H.

    1991-03-01

    The aim of this work is the clearification of R-curve behaviour of non-transforming ceramics, in particular aluminum oxide exhibiting incrystalline fracture. Investigations of crack growth in controlled bending experiments were performed using 3-Pt- and 4-Pt-bending samples of differing sizes under inert conditions. The fracture experiments were realized using several loading techniques, for example constant and varying displacement rates, load rupture (P = 0) and relaxation tests (v = 0). In addition unloading and reloading experiments were performed to investigate hysteresis curves and residual displacements in accordance with R-curve behaviour. During the crack-growth experiments, the crack extension was measured in situ using a high resolution immersion microscope. With this technique, the fracture processes near the crack tip (crack activity zone) was observed as well. The crack resistance as a function of crack extension (R-curve) was determined using differing calculation methods. All of the methods used resulted in approximately identical R-curves, within the statistical error band. The crack resistance at initiation R 0 was 20 N/m. The crack resistance increased during approximately 3 mm of growth to a maximum of 90 N/m. A decrease in the crack resistance was determined for large a/W (crack length normalized with sample height) values, independant of the calculation methods. The R-curve behaviour was interpreted as due to a functional resistance behind the observed crack tip, which arises from a volume dilatation in the crack activity zone while the crack proceeds. (orig.) [de

  9. Indium oxide thin film based ammonia gas and ethanol vapour sensor

    Indian Academy of Sciences (India)

    For the fabrication of miniature heater indium tin oxide thin film was grown on special high temperature corning glass substrate by flash evaporation method. Gold was deposited on the film using thermal evaporation technique under high vacuum. The film was then annealed at 700 K for an hour. The thermocouple attached ...

  10. Transparent conducting zinc oxide thin film prepared by off-axis rf ...

    Indian Academy of Sciences (India)

    Unknown

    Keywords. Transparent conductors; ZnO thin films; photovoltaics. 1. Introduction. Zinc oxide is an n-type semiconductor with a wide direct band gap of 3⋅3 eV. Thin films of ZnO find application as transparent conducting electrode in photovoltaics, .... surface energy will become larger as the film grows. Then the growth ...

  11. Electrosprayed Metal Oxide Semiconductor Films for Sensitive and Selective Detection of Hydrogen Sulfide

    NARCIS (Netherlands)

    Ghimbeu, C.M.; Lumbreras, M.; Schoonman, J.; Siadat, M.

    2009-01-01

    Semiconductor metal oxide films of copper-doped tin oxide (Cu-SnO2), tungsten oxide (WO3) and indium oxide (In2O3) were deposited on a platinum coated alumina substrate employing the electrostatic spray deposition technique (ESD). The morphology studied with scanning electron microscopy (SEM) and

  12. Room temperature transparent conducting oxides based on zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Clatot, J. [Laboratoire de Reactivite et de Chimie des Solides, UMR CNRS 6007, 33, rue Saint-Leu, 80039 Amiens (France); Campet, G. [Institut de Chimie de la Matiere Condensee de Bordeaux (ICMCB), CNRS, 87 Avenue du Docteur A. Schweitzer, 33608 Pessac Cedex (France); Zeinert, A. [Laboratoire de Physique de la Matiere Condensee, Universite de Picardie Jules Verne, 33 rue St. Leu, 80039, Amiens (France); Labrugere, C. [Institut de Chimie de la Matiere Condensee de Bordeaux (ICMCB), CNRS, 87 Avenue du Docteur A. Schweitzer, 33608 Pessac Cedex (France); Rougier, A., E-mail: aline.rougier@u-picardie.fr [Laboratoire de Reactivite et de Chimie des Solides, UMR CNRS 6007, 33, rue Saint-Leu, 80039 Amiens (France)

    2011-04-01

    Doped zinc oxide thin films are grown on glass substrate at room temperature under oxygen atmosphere, using pulsed laser deposition (PLD). O{sub 2} pressure below 1 Pa leads to conductive films. A careful characterization of the film stoichiometry and microstructure using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) concludes on a decrease in crystallinity with Al and Ga additions ({<=}3%). The progressive loss of the (0 0 2) orientation is associated with a variation of the c parameter value as a function of the film thickness and substrate nature. ZnO:Al and ZnO:Ga thin films show a high optical transmittance (>80%) with an increase in band gap from 3.27 eV (pure ZnO) to 3.88 eV and 3.61 eV for Al and Ga doping, respectively. Optical carrier concentration, optical mobility and optical resistivity are deduced from simulation of the optical data.

  13. Bulk-wave and guided-wave photoacoustic evaluation of the mechanical properties of aluminum/silicon nitride double-layer thin films.

    Science.gov (United States)

    Zhang, Feifei; Krishnaswamy, Sridhar; Lilley, Carmen M

    2006-12-01

    The development of devices made of micro- and nano-structured thin film materials has resulted in the need for advanced measurement techniques to characterize their mechanical properties. Photoacoustic techniques, which use pulsed laser irradiation to nondestructively induce very high frequency ultrasound in a test object via rapid thermal expansion, are suitable for nondestructive and non-contact evaluation of thin films. In this paper, we compare two photoacoustic techniques to characterize the mechanical parameters of edge-supported aluminum and silicon nitride double-layer thin films. The elastic properties and residual stresses in such films affect their mechanical performance. In a first set of experiments, a femtosecond transient pump-probe technique is used to investigate the Young's moduli of the aluminum and silicon nitride layers by launching ultra-high frequency bulk acoustic waves in the films. The measured transient signals are compared with simulated transient thermoelastic signals in multi-layer structures, and the elastic moduli are determined. Independent pump-probe tests on silicon substrate-supported region and unsupported region are in good agreement. In a second set of experiments, dispersion curves of the A(0) mode of the Lamb waves that propagate along the unsupported films are measured using a broadband photoacoustic guided-wave method. The residual stresses and flexural rigidities for the same set of double-layer membranes are determined from these dispersion curves. Comparisons of the results obtained by the two photoacoustic techniques are made and discussed.

  14. Protective effects of N-acetylcysteine on aluminum phosphide-induced oxidative stress in acute human poisoning.

    Science.gov (United States)

    Tehrani, Hiva; Halvaie, Zahra; Shadnia, Shahin; Soltaninejad, Kambiz; Abdollahi, Mohammad

    2013-01-01

    Aluminum phosphide is used as a fumigant. It produces phosphine gas (PH₃). PH₃ is a mitochondrial poison which inhibits cytochrome c oxidase, it leads to generation of reactive oxygen species; so one of the most important suggested mechanisms for its toxicity is induction of oxidative stress. In this regard, it could be proposed that a drug like N-acetylcysteine (NAC) as an antioxidant would improve the tolerance of aluminum phosphide-intoxicated cases. The objective of this study was to evaluate the protective effects of NAC on acute aluminum phosphide poisoning. This was a prospective, randomized, controlled open-label trial. All patients received the same supportive treatments. NAC treatment group also received NAC. The blood thiobarbituric acid reactive substances as a marker of lipid peroxidation and total antioxidant capacity of plasma were analyzed. Mean ingested dose of aluminum phosphide in NAC treatment and control groups was 4.8 ± 0.9 g vs. 5.4 ± 3.3 g, respectively (p = 0.41). Significant increase in plasma malonyldialdehyde level in control group was observed (139 ± 28.2 vs. 149.6 ± 35.2 μmol/L, p = 0.02). NAC infusion in NAC treatment group significantly decreased malondialdehyde level (195.7 ± 67.4 vs. 174.6 ± 48.9 μmol/L, p = 0.03), duration of hospitalization (2.7 ± 1.8 days vs. 8.5 ± 8.2 days, p = 0.02), rate of intubation and ventilation (45.4% vs. 73.3%, p = 0.04). Mortality rate in NAC treatment and control groups were 36% and 60%, respectively with odds ratio 2.6 (0.7-10.1, 95% CI). NAC may have a therapeutic effect in acute aluminum phosphide poisoning.

  15. Electrosynthesis of Polyaniline-TiO2 Nanocomposite Films on Aluminum Alloy 3004 Surface and its Corrosion Protection Performance

    Directory of Open Access Journals (Sweden)

    M. Shabani-Nooshabadi

    2013-03-01

    Full Text Available The direct synthesis of polyaniline-TiO2 nanocomposite coatings on aluminum alloy 3004 (AA3004 surface has been investigated by using the galvanostatic method. The synthesized coatings were characterized by FT-IR, SEM-EDX, SEM and AFM. Optical absorption spectroscopy reveals the formation of the emeraldine oxidation state form of polyaniline-TiO2 nanocomposite. The corrosion performances of polyaniline-TiO2 nanocomposite coatings were investigated in 3.5% NaCl solution by Tafel polarization and Electrochemical Impedance Spectroscopy (EIS methods. The corrosion rate of polyaniline-TiO2 nanocomposite coating on AA3004 was found ∼260 times lower than bare AA3004 and corrosion potentials of these coatings have shifted to more positive potentials (105 mV. The results of this study clearly ascertain that the polyaniline-TiO2 nanocomposite coating has outstanding potential to protect the AA3004 against corrosion in a chloride environment.

  16. Corrosion resistance of micro-arc oxidation coatings formed on aluminum alloy with addition of Al2O3

    Science.gov (United States)

    Zhang, Y.; Chen, Y.; Du, H. Q.; Zhao, YW

    2018-03-01

    Micro-arc oxidation (MAO) coatings were formed on the aluminum alloy in silicate-based electrolyte without and with the addition of Al2O3. It is showed that the coating produced in 7 g l‑1 Al2O3-containing electrolyte was of the most superior corrosion resistance. Besides, the corrosion properties of the coatings were studied by means of potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) test in both 0.5 M and 1 M NaCl solution. The results proved that the coating is capable to protect the substrate from the corrosion of aggressive Cl‑ in 0.5 M NaCl after 384 h immersion. However, it can not offer protection to the aluminum alloy substrate after 384 h immersion in 1 M NaCl solution. The schematic diagrams illustrate the corrosion process and matched well with the corrosion test results.

  17. On the oxidation mechanism of microcrystalline silicon thin films studied by Fourier transform infrared spectroscopy

    NARCIS (Netherlands)

    Bronneberg, A. C.; Smets, A. H. M.; Creatore, M.; M. C. M. van de Sanden,

    2011-01-01

    Insight into the oxidation mechanism of microcrystalline silicon thin films has been obtained by means of Fourier transform infrared spectroscopy. The films were deposited by using the expanding thermal plasma and their oxidation upon air exposure was followed in time. Transmission spectra were

  18. Growth and Dissolution of Iron and Manganese Oxide Films

    Energy Technology Data Exchange (ETDEWEB)

    Scot T. Martin

    2008-12-22

    Growth and dissolution of Fe and Mn oxide films are key regulators of the fate and transport of heavy metals in the environment, especially during changing seasonal conditions of pH and dissolved oxygen. The Fe and Mn are present at much higher concentrations than the heavy metals, and, when Fe and Mn precipitate as oxide films, heavy metals surface adsorb or co-precipitate and are thus essentially immobilized. Conversely, when the Fe and Mn oxide films dissolve, the heavy metals are released to aqueous solution and are thus mobilized for transport. Therefore, understanding the dynamics and properties of Fe and Mn oxide films and thus on the uptake and release of heavy metals is critically important to any attempt to develop mechanistic, quantitative models of the fate, transport, and bioavailablity of heavy metals. A primary capability developed in our earlier work was the ability to grow manganese oxide (MnO{sub x}) films on rhodochrosite (MnCO{sub 3}) substrate in presence of dissolved oxygen under mild alkaline conditions. The morphology of the films was characterized using contact-mode atomic force microscopy. The initial growth began by heteroepitaxial nucleation. The resulting films had maximum heights of 1.5 to 2 nm as a result of thermodynamic constraints. Over the three past years, we have investigated the effects of MnO{sub x} growth on the interactions of MnCO{sub 3} with charged ions and microorganisms, as regulated by the surface electrical properties of the mineral. In 2006, we demonstrated that MnO{sub x} growth could induce interfacial repulsion and surface adhesion on the otherwise neutral MnCO{sub 3} substrate under environmental conditions. Using force-volume microscopy (FVM), we measured the interfacial and adhesive forces on a MnO{sub x}/MnCO{sub 3} surface with a negatively charged silicon nitride tip in a 10-mM NaNO3 solution at pH 7.4. The interfacial force and surface adhesion of MnOx were approximately 40 pN and 600 pN, respectively

  19. Preparation of ordered mesoporous nickel oxide film electrodes via lyotropic liquid crystal templated electrodeposition route

    International Nuclear Information System (INIS)

    Zhao Dandan; Xu Maowen; Zhou Wenjia; Zhang Jin; Li Hulin

    2008-01-01

    A novel electrochemical route to fabricate ordered mesoporous metal oxide film electrodes has been investigated with particular reference to nickel oxide. Ordered mesoporous nickel oxide films are successfully synthesized by templated electrodeposition of H I -e nickel hydroxide and followed by heat-treatment in air at various temperatures. The films are characterized physically by thermogravimetry (TG), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The applicability of this film as inexpensive and high-performance supercapacitor electrode material is demonstrated by the electrochemical characterization using cyclic voltammetry (CV) and chronopotentiometry technique. The specific capacitance of the nickel oxide film depends on the annealing temperature, showing a maximum value of 590 F g -1 when the as-deposited film is heat-treated at 250 deg. C for 1.5 h

  20. Semiconducting properties of oxide and passive films formed on AISI 304 stainless steel and Alloy 600

    Directory of Open Access Journals (Sweden)

    Ferreira M. G. S.

    2002-01-01

    Full Text Available The semiconducting properties of passive films formed on AISI 304 stainless steel and Alloy 600 in borate buffer solution were studied by capacitance (Mott-Schottky approach and photocurrent measurements. Oxide films formed on 304 stainless steel in air at 350 ºC have also been studied. The results obtained show that, in all cases the electronic structure of the films is comparable to that of a p-n heterojunction in which the space charges developed at the metal-film and film-electrolyte interfaces have also to be considered. This is in accordance with analytical results showing that the oxide films are in all cases composed of an inner region rich in chromium oxide and an outer region rich in iron oxide.