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Sample records for aluminium gallium indium

  1. Tetrahedral homonuclear organoelement clusters and subhalides of aluminium, gallium and indium

    Science.gov (United States)

    Uhl, Werner

    This review is focused on the synthesis and the reactivity of tetrahedral organoelement clusters of the heavier elements of third main-group aluminium, gallium, and indium, which have been known for about a decade. They possess the elements in an unusually low oxidation state of +1 and have direct element-element interactions between their four constituents. Each cluster atom is further attached to one terminal and in most cases a bulky organic substituent, which prevents disproportionation by steric shielding. The synthesis of these compounds succeeds by different methods such as the reduction of suitable organoelement(III) halides with alkali metals and magnesium or the treatment of element(I) halides with lithium organyls. They are deeply coloured, and their bonding situation may best be described by delocalized molecular orbitals. They show a singular chemical reactivity, which results in the formation of many secondary products possessing unprecedented structures and properties. The synthesis of organoelement subhalides still containing the elements in low oxidation states is discussed in more detail in the second part of this review. These compounds are easily accessible by the careful oxidation of the clusters with halogen donors such as hexachloroethane or with AlX3/X2 mixtures. They produce dimers via halogen bridges, but in certain cases monomers were observed even for the solid state. They are very effective starting compounds for secondary reactions and the generation of new products containing the elements in unusual oxidation states by salt-elimination reactions, for instance.

  2. Extraction chromatography of aluminium(Ⅲ) and mutual separation of aluminium ( Ⅲ ) , gallium ( Ⅲ ), indium ( Ⅲ )and thallium ( Ⅲ ) with N-n-octylaniline%Extraction chromatography of aluminium(Ⅲ) and mutual separation of aluminium ( Ⅲ ),gallium ( Ⅲ ),indium ( Ⅲ )and thallium ( Ⅲ ) with N-n-octylaniline

    Institute of Scientific and Technical Information of China (English)

    Sachin R PHULE; Haribhau R AHER; Shashikant R KUCHEKAR; Sung-H HAN

    2012-01-01

    A selective method has been developed for the extraction chromatography of aluminium (Ⅲ) and its separation from several metal ions with a chromatographic column containing N-n-octylaniline (a liquid anion exchanger) coated on silanized silica gel as a stationary phase.The aluminium (Ⅲ) was quantitatively extracted with the 0.065 mol/L N-n-octylaniline in 0.013 to 0.05 mol/L sodium succinate at a flow rate of 1.0 mL/min.The extracted metal ion has been recovered by eluting with 25.0 mL of 0.05 mol/L hydrochloric acid and estimated spectrophotometrically with aurintricarboxylic acid.The effects of the acid concentration,the reagent concentration,the flow rate and the eluting agents have been investigated.The log-log plots of distribution coefficient ( Kd ( Al (Ⅲ ) ) ) versus N-n-octylaniline concentration in 0.005 and 0.007 mol/L sodium succinate gave the slopes of 0.5 and 0.7 respectively and showed the probable composition of the extracted species was 1∶1 (metal to amine ratio) and the nature of extracted species was [ RR'NH2+ Al succinate2- ] org.The extraction of aluminium(Ⅲ) was carried out in the presence of various ions to ascertain the tolerance limit of individual ions.Aluminium (Ⅲ) has been separated from multicomponent mixtures,pharmaceutical samples and synthetic mixtures corresponding to alloys.A scheme for mutual separation of aluminium (Ⅲ),indium (Ⅲ),gallium (Ⅲ) and thallium(Ⅲ) has been developed by using suitable masking agents.The method is fast,accurate and precise.

  3. Indium gallium nitride multijunction solar cell simulation using silvaco atlas

    OpenAIRE

    Garcia, Baldomero

    2007-01-01

    This thesis investigates the potential use of wurtzite Indium Gallium Nitride as photovoltaic material. Silvaco Atlas was used to simulate a quad-junction solar cell. Each of the junctions was made up of Indium Gallium Nitride. The band gap of each junction was dependent on the composition percentage of Indium Nitride and Gallium Nitride within Indium Gallium Nitride. The findings of this research show that Indium Gallium Nitride is a promising semiconductor for solar cell use. United...

  4. Growth and characterization of indium antimonide and gallium antimonide crystals

    Indian Academy of Sciences (India)

    N K Udayashankar; H L Bhat

    2001-10-01

    Indium antimonide and gallium antimonide were synthesized from the respective component elements using an indigenously fabricated synthesis unit. Bulk crystals of indium antimonide and gallium antimonide were grown using both the vertical and horizontal Bridgman techniques. Effect of ampoule shapes and diameters on the crystallinity and homogeneity was studied. The grown crystals were characterized using X-ray analysis, EDAX, chemical etching, Hall effect and conductivity measurements. In the case of gallium antimonide, effect of dopants (Te and In) on transport and photoluminescence properties was investigated.

  5. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    Energy Technology Data Exchange (ETDEWEB)

    Curtis, Calvin J [Lakewood, CO; Miedaner, Alexander [Boulder, CO; Van Hest, Maikel [Lakewood, CO; Ginley, David S [Evergreen, CO; Nekuda, Jennifer A [Lakewood, CO

    2011-11-15

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  6. Photoconductive Properties of Brush Plated Copper Indium Gallium Selenide Films

    OpenAIRE

    Subiramaniyam, N. P.; P. Thirunavukkarasu; Murali, K. R.

    2013-01-01

    Copper indium gallium selenide (CIGS) films were deposited for the first time by the brush electrodeposition technique. X-ray diffraction studies indicated the formation of single phase chalcopyrite CIGS. Lattice parameters, dislocation density, and strain were calculated. Band gap of the films increased from 1.12 eV to 1.63 eV as the gallium concentration increased. Room temperature transport parameters of the films, namely, resistivity increased from 0.10 ohm cm to 12 ohm cm, mobility decre...

  7. Recent progress in the determination of gallium, indium, and thallium

    Institute of Scientific and Technical Information of China (English)

    GAO Jinzhang

    2005-01-01

    This mini-review covers the literatures of the determination of gallium, indium, and thallium by instrumental analysis with computer-assisted searching over the period of 1994 to 2003. Some papers appearing in the early of 2004 are also included. Because the rapid progress in the instrument has been made, these new papers are prioritized in selection in the similar papers. The contents are considered to be separation and preconcentration, spectrophotometry, spectrofluorimetry, electroanalyses, atomic absorption spectrometry, inductively coupled plasma-atomic emission spectrometry, inductively coupled plasma-mass spectrometry and so forth.

  8. Effect of oxidation on the Mechanical Properties of Liquid Gallium and Eutectic Gallium-Indium

    CERN Document Server

    Xu, Qin; Guo, Qiti; Jaeger, Heinrich; Brown, Eric

    2012-01-01

    Liquid metals exhibit remarkable mechanical properties, in particular large surface tension and low viscosity. However, these properties are greatly affected by oxidation when exposed to air. We measure the viscosity, surface tension, and contact angle of gallium (Ga) and a eutectic gallium-indium alloy (eGaIn) while controlling such oxidation by surrounding the metal with an acid bath of variable concentration. Rheometry measurements reveal a yield stress directly attributable to an oxide skin that obscures the intrinsic behavior of the liquid metals. We demonstrate how the intrinsic viscosity can be obtained with precision through a scaling technique that collapses low- and high-Reynolds number data. Measuring surface tension with a pendant drop method, we show that the oxide skin generates a surface stress that mimics surface tension and develop a simple model to relate this to the yield stress obtained from rheometry. We find that yield stress, surface tension, and contact angle all transition from solid-...

  9. Highly ordered horizontal indium gallium arsenide/indium phosphide multi-quantum-well in wire structure on (001) silicon substrates

    Science.gov (United States)

    Han, Yu; Li, Qiang; Lau, Kei May

    2016-12-01

    We report the characteristics of indium gallium arsenide stacked quantum structures inside planar indium phosphide nanowires grown on exact (001) silicon substrates. The morphological evolution of the indium phosphide ridge buffers inside sub-micron trenches has been studied, and the role of inter-facet diffusion in this process is discussed. Inside a single indium phosphide nanowire, we are able to stack quantum structures including indium gallium arsenide flat quantum wells, quasi-quantum wires, quantum wires, and ridge quantum wells. Room temperature photoluminescence measurements reveal a broadband emission spectrum centered at 1550 nm. Power dependent photoluminescence analysis indicates the presence of quasi-continuum states. This work thus provides insights into the design and growth process control of multiple quantum wells in wire structures for high performance nanowire lasers on a silicon substrate with 1550 nm band emission.

  10. Fractal characteristics of nanocrystalline indium and gallium sulfide particles

    Energy Technology Data Exchange (ETDEWEB)

    Sastry, P.U., E-mail: psastry@barc.gov.i [Solid State Physics Division, Mumbai 400085 (India); Dutta, Dimple P. [Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

    2009-11-13

    The structure of nano-sized powders of indium sulfide (In{sub 2}S{sub 3}) and gallium sulfide (Ga{sub 2}S{sub 3}), prepared by single source precursor route has been investigated by small angle X-ray scattering technique. The particle morphology shows interesting fractal nature. For In{sub 2}S{sub 3}, the nanoparticle aggregates show a mass fractal with fractal dimension 2.0 that increases with longer time of thermal treatment. Below the length scale of about 20 nm, the particles have a rough surface with a surface fractal dimension of 2.8. Unlike In{sub 2}S{sub 3}, structure of Ga{sub 2}S{sub 3} exhibits a single surface fractal over whole q-range of study. The estimated particle sizes are in range of 5-15 nm and the results are supported by transmission electron microscope.

  11. Low-threshold indium gallium nitride quantum dot microcavity lasers

    Science.gov (United States)

    Woolf, Alexander J.

    Gallium nitride (GaN) microcavities with embedded optical emitters have long been sought after as visible light sources as well as platforms for cavity quantum electrodynamics (cavity QED) experiments. Specifically, materials containing indium gallium nitride (InGaN) quantum dots (QDs) offer an outstanding platform to study light matter interactions and realize practical devices, such as on-chip light emitting diodes and nanolasers. Inherent advantages of nitride-based microcavities include low surface recombination velocities, enhanced room-temperature performance (due to their high exciton binding energy, as high as 67 meV for InGaN QDs), and emission wavelengths in the blue region of the visible spectrum. In spite of these advantages, several challenges must be overcome in order to capitalize on the potential of this material system. Such diffculties include the processing of GaN into high-quality devices due to the chemical inertness of the material, low material quality as a result of strain-induced defects, reduced carrier recombination effciencies due to internal fields, and a lack of characterization of the InGaN QDs themselves due to the diffculty of their growth and therefore lack of development relative to other semiconductor QDs. In this thesis we seek to understand and address such issues by investigating the interaction of light coupled to InGaN QDs via a GaN microcavity resonator. Such coupling led us to the demonstration of the first InGaN QD microcavity laser, whose performance offers insights into the properties and current limitations of the nitride materials and their emitters. This work is organized into three main sections. Part I outlines the key advantages and challenges regarding indium gallium nitride (InGaN) emitters embedded within gallium nitride (GaN) optical microcavities. Previous work is also discussed which establishes context for the work presented here. Part II includes the fundamentals related to laser operation, including the

  12. Deep Subgap Feature in Amorphous Indium Gallium Zinc Oxide. Evidence Against Reduced Indium

    Energy Technology Data Exchange (ETDEWEB)

    Sallis, Shawn [Binghamton Univ., NY (United States); Quackenbush, Nicholas F. [Binghamton Univ., NY (United States); Williams, Deborah S. [Binghamton Univ., NY (United States); Senger, Mikell [Binghamton Univ., NY (United States); Woicik, Joseph C. [National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States); White, Bruce E. [Binghamton Univ., NY (United States); Piper, Louis F. [Binghamton Univ., NY (United States)

    2015-01-14

    Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. In spite of the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. We present evidence against In+ lone pair active electrons as the origin of the deep subgap features. No In+ species are observed, only In0 nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states.

  13. Deep subgap feature in amorphous indium gallium zinc oxide: Evidence against reduced indium

    Energy Technology Data Exchange (ETDEWEB)

    Sallis, Shawn; Williams, Deborah S. [Materials Science and Engineering, Binghamton University, Binghamton, New York, 13902 (United States); Quackenbush, Nicholas F.; Senger, Mikell [Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York, 13902 (United States); Woicik, Joseph C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland, 20899 (United States); White, Bruce E.; Piper, Louis F.J. [Materials Science and Engineering, Binghamton University, Binghamton, New York, 13902 (United States); Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York, 13902 (United States)

    2015-07-15

    Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. Despite the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. Here, we present evidence against In{sup +} lone pair active electrons as the origin of the deep subgap features. No In{sup +} species are observed, only In{sup 0} nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Exposure Potential and Health Impacts of Indium and Gallium, Metals Critical to Emerging Electronics and Energy Technologies.

    Science.gov (United States)

    White, Sarah Jane O; Shine, James P

    2016-12-01

    The rapid growth of new electronics and energy technologies requires the use of rare elements of the periodic table. For many of these elements, little is known about their environmental behavior or human health impacts. This is true for indium and gallium, two technology critical elements. Increased environmental concentrations of both indium and gallium create the potential for increased environmental exposure, though little is known about the extent of this exposure. Evidence is mounting that indium and gallium can have substantial toxicity, including in occupational settings where indium lung disease has been recognized as a potentially fatal disease caused by the inhalation of indium particles. This paper aims to review the basic chemistry, changing environmental concentrations, potential for human exposure, and known health effects of indium and gallium.

  15. Impact of atmospheric species on copper indium gallium selenide solar cell stability: An overview

    NARCIS (Netherlands)

    Theelen, M.

    2016-01-01

    An overview of the measurement techniques and results of studies on the stability of copper indium gallium selenide (CIGS) solar cells and their individual layers in the presence of atmospheric species is presented: in these studies, Cu(In,Ga)Se2 solar cells, their molybdenum back contact, and their

  16. Gallium(III) and indium(III) dithiolate complexes: Versatile precursors for metal sulfides

    Indian Academy of Sciences (India)

    Shamik Ghoshal; Vimal K Jain

    2007-11-01

    The chemistry of classical and organometallic complexes of gallium and indium with dithiolate ligands, i.e., dithiocarboxylates, xanthates, dithiocarbamates, dithiophosphates, dithiophophinates and dithioarsenates, has been reviewed. Synthesis, spectroscopic and structural aspects of these complexes are described. Their emerging role as single source molecular precursors for the preparation of metal sulfide thin films and nano-particles has been discussed.

  17. Preparation and properties of hydrogen-intercalated indium and gallium monoselenides

    Energy Technology Data Exchange (ETDEWEB)

    Koz' mik, I.D.; Kovalyuk, Z.D.; Grigorchak, I.I.; Bakhmatyuk, B.P.

    1987-10-01

    Indium and gallium monoselenides can be intercalated by hydrogen ions. Thermodynamic parameters have been calculated for the intercalation and the proton diffusion coefficient in the van der Waals' spaces has been determined. The effects of hydrogen intercalation on the resistance perpendicular to the layers in InSe and GaSe have been determined.

  18. Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

    Energy Technology Data Exchange (ETDEWEB)

    Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

    2014-11-04

    Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

  19. Analysis on the Performance of Copper Indium Gallium Selenide (CIGS Based Photovoltaic Thermal

    Directory of Open Access Journals (Sweden)

    Zulkepli Afzam

    2016-01-01

    Full Text Available This paper deals with the efficiency improvement of Copper Indium Gallium Selenide (CIGS Photovoltaic (PV and also solar thermal collector. Photovoltaic thermal (PV/T can improve overall efficiency for PV and also solve the problem of limited roof space at urban area. Objective of this study is to clarify the effect of mass flow rate on the efficiency of the PV/T system. A CIGS solar cell is used with rated output power 65 W and 1.18 m2 of area. 4 set of experiments were carried out, which were: thermal collector with 0.12 kg/s flow rate, PV/T with 0.12 kg/s flow rate, PV/T with 0.09 kg/s flow rate and PV. It was found that PV/T with 0.12 kg/s flow rate had the highest electrical efficiency, 2.92 %. PV/T with 0.09 kg/s flow rate had the lowest electrical efficiency, 2.68 %. It also had 2 % higher overall efficiency. The efficiency gained is low due to several factors. The rated output power of the PV is low for the area of 1.18 m2. The packing factor of the PV also need to be considered as it may not be operated at the optimal packing factor. Furthermore, aluminium sheet of the PV may affect the PV temperature due to high thermal conductivity. Further study on more values of mass flow rate and also other parameters that affect the efficiency of the PV/T is necessary.

  20. Realization of ultrathin Copper Indium Gallium Di-selenide (CIGSe) solar cells

    OpenAIRE

    Jehl, Zacharie

    2012-01-01

    In this thesis, we investigate on the possibility to realize ultrathin absorber Copper Indium Gallium Di-Selenide (CIGSe) solar cells, by reducing the CIGSe thickness from 2500 nm down to 100 nm, while conserving a high conversion efficiency.Using numerical modeling, we first study the evolution of the photovoltaic parameters when reducing the absorber thickness. A strong decrease of the efficiency of the solar cell is observed, mainly related to a reduced light absorption and carrier collect...

  1. Layer-by-Layer Nanoassembly of Copper Indium Gallium Selenium Nanoparticle Films for Solar Cell Applications

    OpenAIRE

    Hemati, A; Shrestha, S; M. Agarwal; K. Varahramyan

    2012-01-01

    Thin films of CIGS nanoparticles interdigited with polymers have been fabricated through a cost-effective nonvacuum film deposition process called layer-by-layer (LbL) nanoassembly. CIGS nanoparticles synthesized by heating copper chloride, indium chloride, gallium chloride, and selenium in oleylamine were dispersed in water, and desired surface charges were obtained through pH regulation and by coating the particles with polystyrene sulfonate (PSS). Raising the pH of the nanoparticle disper...

  2. Gallium sulfide and indium sulfide nanoparticles from complex precursors: Synthesis and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, D.P. [Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)]. E-mail: duttadimple@yahoo.co.in; Sharma, G. [Materials Science Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Tyagi, A.K. [Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Kulshreshtha, S.K. [Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400085 (India)

    2007-03-15

    Nanocrystalline gallium sulfide (Ga{sub 2}S{sub 3}) and indium sulfide (In{sub 2}S{sub 3}) have been prepared by a two-step process. The first step involves metathesis reaction of trimethyl gallium/indium ether adduct (Me{sub 3}Ga/In.OEt{sub 2}) with 1,2-ethanedithiol (HSCH{sub 2}CH{sub 2}SH) resulting in the formation of a polymeric precursor. The precursor complex has been characterized using Ga/In analysis, IR, proton NMR and mass spectroscopy. The thermal behavior of both complexes has been studied using thermogravimetric (TG) analysis. In the second step, these precursor complexes have been pyrolysed in furnace under flowing nitrogen atmosphere whereupon they undergo thermodestruction to yield nanometer-sized particles of gallium/indium sulfide. The nanoparticles obtained were characterized using powder X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED) and energy dispersive X-ray spectroscopy (EDS). The average size of the nanoparticles ranged from 10 to 12 nm for Ga{sub 2}S{sub 3} and 20 to 22 nm for In{sub 2}S{sub 3}, respectively. This is the first report on use of a binary single source precursor to synthesize {beta}-Ga{sub 2}S{sub 3} nanoparticles.

  3. Determination of lattice orientation in aluminium alloy grains by low energy gallium ion-channelling

    Science.gov (United States)

    Silk, Jonathan R.; Dashwood, Richard J.; Chater, Richard J.

    2010-06-01

    Polished sections of a fine-grained aluminium, silicon carbide metal matrix composite (MMC) alloy were prepared by sputtering using a low energy gallium ion source and column (FIB). The MMC had been processed by high temperature extrusion. Images of the polished surface were recorded using the ion-induced secondary electron emission. The metal matrix grains were distinguished by gallium ion-channelling contrast from the silicon carbide component. The variation of the contrast from the aluminium grains with tilt angle can be recorded and used to determine lattice orientation with the contrast from the silicon carbide (SiC) component as a reference. This method is rapid and suits site-specific investigations where classical methods of sample preparation fail.

  4. Stability of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors with Treatment Processes

    Science.gov (United States)

    Lin, Yung-Hao; Lee, Ching-Ting

    2016-10-01

    The indium-gallium-zinc-aluminum-oxide (IGZAO) channel layer of the bottom-gate-type thin-film transistors (TFTs) was deposited on indium tin oxide-coated glass substrates using a magnetron radio frequency co-sputtering system with dual targets of indium gallium zinc oxide and Al. The 3 s orbital of Al cations provided an extra transport pathway and widened the bottom of the conduction band, thus increasing the electron mobility in the IGZAO films. The Al-O bonds could sustain the stability of oxygen of the IGZAO films. The IGZAO TFTs were processed by O2 plasma and post-annealing treatments. Hysteresis analysis was carried out in order to study the stability of the resulting IGZAO TFTs, the positive bias temperature stress (PBTS) performance, and the hot carrier effect were also measured. For the IGZAO TFTs, the threshold voltage shift of the PBTS performance and the hot carrier effect were 0.1 V and 0.06 V, respectively. Overall, the IGZAO TFTs exhibited good stability in this study.

  5. Organo-gallium and indium complexes with dithiolate and oxo ligands: Synthesis, structures and applications

    Indian Academy of Sciences (India)

    Vimal K Jain; Amey Wadawale; Nisha P Kushwah; Manoj K Pal

    2011-03-01

    The chemistry of organo-gallium and indium complexes with dithiolate and internally functionalised oxo ligands has been explored. With 1,1-dithiolate ligands both classical and organometallic complexes of gallium and indium, [M(S$^\\cap$S)3], [RM(S$^\\cap$S)2] and [R2M(S$^\\cap$S)] (where R = Me or Et; M = Ga or In; S$^\\cap$S = RCS2, ROCS2, R2NCS2 and (RO)2PS2) have been isolated. Reactions of internally functionalised oxo ligands with R3MR$\\cdot$OEt2 afforded diorganometal complexes [R2ML]. Molecular structures of several of these complexes have been established by single crystal X-ray diffraction analyses. Complexes derived from oxo ligands showed photoluminescence. They have been used as alkylating agents for C-C coupling reactions of aryl bromides in the presence of PdCl2(PPh3)2. Indium dithiolate complexes have been used as molecular precursors for the preparation of mono dispersed ẞ-In2S3 nanoparticles.

  6. Stability of Indium Gallium Zinc Aluminum Oxide Thin-Film Transistors with Treatment Processes

    Science.gov (United States)

    Lin, Yung-Hao; Lee, Ching-Ting

    2017-02-01

    The indium-gallium-zinc-aluminum-oxide (IGZAO) channel layer of the bottom-gate-type thin-film transistors (TFTs) was deposited on indium tin oxide-coated glass substrates using a magnetron radio frequency co-sputtering system with dual targets of indium gallium zinc oxide and Al. The 3 s orbital of Al cations provided an extra transport pathway and widened the bottom of the conduction band, thus increasing the electron mobility in the IGZAO films. The Al-O bonds could sustain the stability of oxygen of the IGZAO films. The IGZAO TFTs were processed by O2 plasma and post-annealing treatments. Hysteresis analysis was carried out in order to study the stability of the resulting IGZAO TFTs, the positive bias temperature stress (PBTS) performance, and the hot carrier effect were also measured. For the IGZAO TFTs, the threshold voltage shift of the PBTS performance and the hot carrier effect were 0.1 V and 0.06 V, respectively. Overall, the IGZAO TFTs exhibited good stability in this study.

  7. Electron Transport Layer-Free Inverted Organic Solar Cells Fabricated with Highly Transparent Low-Resistance Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Electrode

    Science.gov (United States)

    Kim, Jun Ho; Kwon, Sung-Nam; Na, Seok-In; Kim, Sun-Kyung; Yoo, Young-Zo; Im, Hyeong-Seop; Seong, Tae-Yeon

    2017-04-01

    Inverted organic solar cells (OSCs) have been fabricated with conventional Sn-doped indium oxide (ITO) and amorphous indium gallium zinc oxide (a-IGZO)/Ag/a-IGZO (39 nm/19 nm/39 nm) (a-IAI) electrodes and their electrical characteristics characterized. The ITO and optimized a-IAI electrodes showed high transmittance of 96% and 88% at 500 nm, respectively. The carrier concentration and sheet resistance of the ITO and a-IAI films were 8.46 × 1020 cm-3 and 7.96 × 1021 cm-3 and 14.18 Ω/sq and 4.24 Ω/sq, respectively. Electron transport layer (ETL)-free OSCs with the a-IAI electrode exhibited power conversion efficiency (PCE) of 2.66%, similar to that of ZnO ETL-based OSCs with ITO electrode (3.27%). However, the ETL-free OSCs with the a-IAI electrode showed much higher PCE than the ETL-free OSCs with the ITO electrode (0.84%). Ultraviolet photoelectron spectroscopy results showed that the work function of the a-IAI electrode was 4.15 eV. This improved performance was attributed to the various roles of the a-IAI electrode, e.g., as an effective ETL and a hole blocking layer.

  8. Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Li Qiang, E-mail: guoliqiang@ujs.edu.cn; Ding, Jian Ning; Huang, Yu Kai [Micro/Nano Science & Technology Center, Jiangsu University, Zhenjiang, 212013 (China); Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2015-08-15

    Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO{sub 2} electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO) synaptic transistor. In such synaptic transistors, protons within the SiO{sub 2} electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF) behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications.

  9. Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

    Science.gov (United States)

    Wang, Wei-Hsiang; Lyu, Syue-Ru; Heredia, Elica; Liu, Shu-Hao; Jiang, Pei-hsun; Liao, Po-Yung; Chang, Ting-Chang; Chen, Hua-Mao

    2017-01-01

    We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or by varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.

  10. Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

    KAUST Repository

    El Afandy, Rami

    2011-07-07

    Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique physical properties of polar indium gallium nitride quantum dots grown by molecular beam epitaxy technique. In this thesis, a theoretical overview of the physical, structural and optical properties of polar III-nitrides quantum dots will be presented. Particular emphasis will be given to properties that distinguish truncated-pyramidal III-nitride quantum dots from other III-V semiconductor based quantum dots. The optical properties of indium gallium nitride quantum dots are mainly dominated by large polarization fields, as well as quantum confinement effects. Hence, the experimental investigations for such quantum dots require performing bandgap calculations taking into account the internal strain fields, polarization fields and confinement effects. The experiments conducted in this investigation involved the transmission electron microscopy and x-ray diffraction as well as photoluminescence spectroscopy. The analysis of the temperature dependence and excitation power dependence of the PL spectra sheds light on the carrier dynamics within the quantum dots, and its underlying wetting layer. A further analysis shows that indium gallium nitride quantum dots through three-dimensional confinements are able to prevent the electronic carriers from getting thermalized into defects which grants III-nitrides quantum dot based light emitting diodes superior thermally induced optical

  11. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel

    Science.gov (United States)

    Jeong, Jae Kyeong; Jeong, Jong Han; Yang, Hui Won; Park, Jin-Seong; Mo, Yeon-Gon; Kim, Hye Dong

    2007-09-01

    The authors report the fabrication of high performance thin film transistors (TFTs) with an amorphous indium gallium zinc oxide (a-IGZO) channel, which was deposited by cosputtering using a dual IGZO and indium zinc oxide (IZO) target. The effect of the indium content on the device performance of the a-IGZO TFTs was investigated. At a relatively low IZO power of 400W, the field-effect mobility (μFE) and subthreshold gate swing (S) of the a-IGZO TFTs were dramatically improved to 19.3cm2/Vs and 0.35V/decade, respectively, compared to those (11.2cm2/Vs and 1.11V/decade) for the TFTs with the a-IGZO channel (reference sample) prepared using only the IGZO target. The enhancement in the subthreshold IDS-VGS characteristics at an IZO power of 400W compared to those of the reference sample was attributed to the reduction of the interface trap density rather than the reduction of the bulk defects of the a-IGZO channel.

  12. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    Energy Technology Data Exchange (ETDEWEB)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna [School of Microelectronic Engineering, Universiti Malaysia Perlis, Kampus Pauh Putra, 02600 Arau, Perlis (Malaysia)

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  13. Interface location-controlled indium gallium zinc oxide thin-film transistors using a solution process

    Science.gov (United States)

    Na, Jae Won; Kim, Yeong-gyu; Jung, Tae Soo; Tak, Young Jun; Park, Sung Pyo; Park, Jeong Woo; Kim, Si Joon; Kim, Hyun Jae

    2016-03-01

    The role of an interface as an electron-trapping layer in double-stacked indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) was investigated and interface location-controlled (ILC) IGZO TFTs were introduced. In the ILC TFTs, the thickness of the top and bottom IGZO layers is controlled to change the location of the interface layer. The system exhibited improved electrical characteristics as the location of the interface layer moved further from the gate insulator: field-effect mobility increased from 0.36 to 2.17 cm2 V-1 s-1, and the on-current increased from 2.43  ×  10-5 to 1.33  ×  10-4 A. The enhanced electrical characteristics are attributed to the absence of an electron-trapping interface layer in the effective channel layer where electrons are accumulated under positive gate bias voltage.

  14. Molybdenum Disulfide as a Protection Layer and Catalyst for Gallium Indium Phosphide Solar Water Splitting Photocathodes.

    Science.gov (United States)

    Britto, Reuben J; Benck, Jesse D; Young, James L; Hahn, Christopher; Deutsch, Todd G; Jaramillo, Thomas F

    2016-06-02

    Gallium indium phosphide (GaInP2) is a semiconductor with promising optical and electronic properties for solar water splitting, but its surface stability is problematic as it undergoes significant chemical and electrochemical corrosion in aqueous electrolytes. Molybdenum disulfide (MoS2) nanomaterials are promising to both protect GaInP2 and to improve catalysis because MoS2 is resistant to corrosion and also possesses high activity for the hydrogen evolution reaction (HER). In this work, we demonstrate that GaInP2 photocathodes coated with thin MoS2 surface protecting layers exhibit excellent activity and stability for solar hydrogen production, with no loss in performance (photocurrent onset potential, fill factor, and light-limited current density) after 60 h of operation. This represents a 500-fold increase in stability compared to bare p-GaInP2 samples tested in identical conditions.

  15. Growth of gallium nitride and indium nitride nanowires on conductive and flexible carbon cloth substrates.

    Science.gov (United States)

    Yang, Yi; Ling, Yichuan; Wang, Gongming; Lu, Xihong; Tong, Yexiang; Li, Yat

    2013-03-07

    We report a general strategy for synthesis of gallium nitride (GaN) and indium nitride (InN) nanowires on conductive and flexible carbon cloth substrates. GaN and InN nanowires were prepared via a nanocluster-mediated growth method using a home built chemical vapor deposition (CVD) system with Ga and In metals as group III precursors and ammonia as a group V precursor. Electron microscopy studies reveal that the group III-nitride nanowires are single crystalline wurtzite structures. The morphology, density and growth mechanism of these nanowires are determined by the growth temperature. Importantly, a photoelectrode fabricated by contacting the GaN nanowires through a carbon cloth substrate shows pronounced photoactivity for photoelectrochemical water oxidation. The ability to synthesize group III-nitride nanowires on conductive and flexible substrates should open up new opportunities for nanoscale photonic, electronic and electrochemical devices.

  16. Molybdenum Disulfide as a Protection Layer and Catalyst for Gallium Indium Phosphide Solar Water Splitting Photocathodes

    Energy Technology Data Exchange (ETDEWEB)

    Britto, Reuben J.; Benck, Jesse D.; Young, James L.; Hahn, Christopher; Deutsch, Todd G.; Jaramillo, Thomas F.

    2016-06-02

    Gallium indium phosphide (GaInP2) is a semiconductor with promising optical and electronic properties for solar water splitting, but its surface stability is problematic as it undergoes significant chemical and electrochemical corrosion in aqueous electrolytes. Molybdenum disulfide (MoS2) nanomaterials are promising to both protect GaInP2 and to improve catalysis since MoS2 is resistant to corrosion and also possesses high activity for the hydrogen evolution reaction (HER). In this work, we demonstrate that GaInP2 photocathodes coated with thin MoS2 surface protecting layers exhibit excellent activity and stability for solar hydrogen production, with no loss in performance (photocurrent onset potential, fill factor, and light limited current density) after 60 hours of operation. This represents a five-hundred fold increase in stability compared to bare p-GaInP2 samples tested in identical conditions.

  17. An automatic-recovery inertial switch based on a gallium-indium metal droplet

    Science.gov (United States)

    Shen, Teng; Zhang, Dongxing; Huang, Liu; Wang, Jiong

    2016-11-01

    In this paper, an automatic-recovery inertial switch is presented which for the first time adopts gallium-indium (EGaIn) as the switching metal droplet. The device consists of a glass substrate with patterned sensing electrodes, a PDMS microfluidic chip with microchannels and microvalves and a metal droplet. Here, we used EGaIn as the conductive element of the switch because it has several advantages compared with other conductive materials such as water or mercury. Specifically, the proposed device has the ability to automatically recover and can be used repeatedly. In the initial off-state, the droplet is stored in the reservoir. During the working state, the metal droplet passes through the channel and connects the sensing electrodes when the acceleration exceeds the designed threshold level. After that, the EGaIn will return to its original position by a subtle use of its structural characteristics.

  18. New materials for optoelectronic devices: Growth and characterization of indium and gallium chalcogenide layer compounds

    Energy Technology Data Exchange (ETDEWEB)

    Mancini, A.M.; Micocci, G.; Rizzo, A.

    1983-09-01

    The main characteristics and the possible applications of some new materials for optoelectronic devices are analyzed. For this purpose, the most widely used growth methods for obtaining good quality single crystals of indium and gallium chalcogenide layered compounds are described together with the best results obtained by us in the growth of GaS, GaSe, GaTe and InSe. The structural characteristics of these compounds, as inferred by electron and X-ray diffraction are reported. The electrical and optical properties of the various materials are related to the growth methods and are analyzed taking into account the trapping centers present in the energy gaps. The parameters of these centers are reported for all the analyzed layered compounds as determined by different electric and photoelectric techniques.

  19. Transport of Indium, Gallium and Thallium Metal Ions Through Chromatographic Fiber Supported Solid Membrane in Acetylacetone Containing Mixed Solvents

    Institute of Scientific and Technical Information of China (English)

    Abaji Gaikwad

    2011-01-01

    The transport of metal ions of indium, gallium and thallium from source solution to receiving phase through the chromatographic fiber supported solid membrane in the acetylacetone (HAA) containing mixed solvent system has been explored. The fibers supported solid membranes were prepared with chemical synthesis from cellulose fibers and citric acid with the carboxylic acid ion exchange groups introduced. The experimental variables, such as concentration of metal ions (10^-2 to 10^-4 mol.L^-1) in the source solution, mixed solvent composition [for exampl, e, acetylacetone, (2,4-pentanedione), (HAA) 20% (by volume), 1,4-dioxane 10% to 60% and HC1 0.25 to 2 mol.L^-1] in the receiving phase and stirring speed (50-130 r.min ) of the bulk source and receiving phase, were explored. The efficiency of mixed solvents for the transport of metal ions from the source to receiving phase through the fiber supported solid membrane was evaluated. The combined ion exchange solvent extraction (CIESE) was observed effective for the selective transport of thallium, indium and gallium metal ions through fiber supported solid membrane in mixed solvents. The oxonium salt formation in the receiving phase enhances thallium, indium and gallium metal ion transport through solid membrane phase. The selective transport of thallium metal ions from source phase was observed from indium and gallium metal ions in the presence of hydrochloric acid in organic solvents in receiving phase. The separation of thallium metal ions from the binary mixtures of Be(II), Ti(IV), AI(III) Ca(II), Mg(II), K (I), La(III) and Y(III) was carried out in the mixed solvent system using cellulose fiber supported solid membrane.

  20. Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities.

    Science.gov (United States)

    Woolf, Alexander; Puchtler, Tim; Aharonovich, Igor; Zhu, Tongtong; Niu, Nan; Wang, Danqing; Oliver, Rachel; Hu, Evelyn L

    2014-09-30

    Low-threshold lasers realized within compact, high-quality optical cavities enable a variety of nanophotonics applications. Gallium nitride materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light-matter interactions and realize practical devices such as efficient light-emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low-threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we use the distinctive, high-quality (Q ∼ 5,500) modes of the cavities, and the change in the highest-intensity mode as a function of pump power to better understand the dominant radiative processes. The variations of threshold power and lasing wavelength as a function of gain medium help us identify the possible limitations to lower-threshold lasing with quantum dot active medium. In addition, we have identified a distinctive lasing signature for quantum dot materials, which consistently lase at wavelengths shorter than the peak of the room temperature gain emission. These findings not only provide better understanding of lasing in nitride-based quantum dot cavity systems but also shed insight into the more fundamental issues of light-matter coupling in such systems.

  1. Electronic transitions in the bandgap of copper indium gallium diselenide polycrystalline thin films

    Science.gov (United States)

    Heath, Jennifer Theresa

    The electronic properties of polycrystalline copper indium gallium diselenide thin films have been investigated, with emphasis on understanding the distribution and origin of electronic states in the bandgap. The samples studied were working photovoltaic devices with the structure ZnO/CdS/CuIn1-xGa xSe2/Mo, and photovoltaic efficiencies ranging from 8 to 16%. The CdS layer and the p-type CuIn1-xGa xSe2 film create the n+- p junction at the heart of these devices. The samples were investigated using four techniques based on the electrical response of the junction: admittance spectroscopy, drive level capacitance profiling, transient photocapacitance spectroscopy, and transient photocurrent spectroscopy. From these measurements the free carrier densities, defect densities within the bandgap, spatial uniformity, and minority carrier mobilities have been deduced. The sub-bandgap response from the CuIn1-xGaxSe2 film was dominated by two defects. One exhibited a thermal transition to the valence band with an activation energy ranging between 0.1 and 0.3 eV and thermal emission prefactors obeying the Meyer-Neldel rule. The second was detected as an optical transition 0.8 eV from the valence band edge. Neither of these defects exhibited densities that varied systematically with gallium content, implying that they are not directly connected with the group III elements in these alloys. The defect densities also do not clearly correlate with the photovoltaic device performance; however, the position of the 0.8 eV defect lies nearer to mid-gap in the higher gallium, and hence higher band gap, material. This implies that it may be a more important recombination center in these devices and may be partially responsible for the reduced photovoltaic efficiencies observed when Ga/(In + Ga) > 0.4. An additional defect response was observed near mid-gap in films grown by processes known to produce lower quality devices. The influence of defects located at grain boundaries was also

  2. Numerical Analysis of Copper-Indium-Gallium-Diselenide-Based Solar Cells by SCAPS-1D

    Directory of Open Access Journals (Sweden)

    S. Ouédraogo

    2013-01-01

    Full Text Available We used a one-dimensional simulation program Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-1D to investigate Copper-Indium-Gallium-Diselenide- (CIGS- based solar cells properties. Starting with a conventional ZnO-B/i-ZnO/CdS/CIGS structure, we simulated the parameters of current-voltage characteristics and showed how the absorber layer thickness, hole density, and band gap influence the short-circuit current density (Jsc, open-circuit voltage (Voc, fill factor (FF, and efficiency of solar cell. Our simulation results showed that all electrical parameters are greatly affected by the absorber thickness (w below 1000 nm, due to the increase of back-contact recombination and very poor absorption. Increasing hole density (p or absorber band gap (Eg improves Voc and leads to high efficiency, which equals value of 16.1% when p = 1016 cm−3 and Eg=1.2 eV. In order to reduce back-contact recombination, the effect of a very thin layer with high band gap inserted near the back contact and acting as electrons reflector, the so-called back-electron reflector (EBR, has been investigated. The performances of the solar cells are significantly improved, when ultrathin absorbers (w < 500 nm are used; the corresponding gain of Jsc due to the EBR is 3 mA/cm2. Our results are in good agreement with those reported in the literature from experiments.

  3. Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting.

    Science.gov (United States)

    Kim, Hoon-sik; Brueckner, Eric; Song, Jizhou; Li, Yuhang; Kim, Seok; Lu, Chaofeng; Sulkin, Joshua; Choquette, Kent; Huang, Yonggang; Nuzzo, Ralph G; Rogers, John A

    2011-06-21

    Properties that can now be achieved with advanced, blue indium gallium nitride light emitting diodes (LEDs) lead to their potential as replacements for existing infrastructure in general illumination, with important implications for efficient use of energy. Further advances in this technology will benefit from reexamination of the modes for incorporating this materials technology into lighting modules that manage light conversion, extraction, and distribution, in ways that minimize adverse thermal effects associated with operation, with packages that exploit the unique aspects of these light sources. We present here ideas in anisotropic etching, microscale device assembly/integration, and module configuration that address these challenges in unconventional ways. Various device demonstrations provide examples of the capabilities, including thin, flexible lighting "tapes" based on patterned phosphors and large collections of small light emitters on plastic substrates. Quantitative modeling and experimental evaluation of heat flow in such structures illustrates one particular, important aspect of their operation: small, distributed LEDs can be passively cooled simply by direct thermal transport through thin-film metallization used for electrical interconnect, providing an enhanced and scalable means to integrate these devices in modules for white light generation.

  4. Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Arora, H. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Phelma–Grenoble INP, 3 Parvis Louis Néel, 38016 Grenoble Cedex 01 (France); Malinowski, P. E., E-mail: pawel.malinowski@imec.be; Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Heremans, P. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); ESAT, Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, B-3001 Leuven (Belgium)

    2015-04-06

    Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm{sup 2} at a bias voltage of −2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C{sub 61}-butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 10{sup 12} Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiO{sub x} as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment.

  5. Layer-by-Layer Nanoassembly of Copper Indium Gallium Selenium Nanoparticle Films for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    A. Hemati

    2012-01-01

    Full Text Available Thin films of CIGS nanoparticles interdigited with polymers have been fabricated through a cost-effective nonvacuum film deposition process called layer-by-layer (LbL nanoassembly. CIGS nanoparticles synthesized by heating copper chloride, indium chloride, gallium chloride, and selenium in oleylamine were dispersed in water, and desired surface charges were obtained through pH regulation and by coating the particles with polystyrene sulfonate (PSS. Raising the pH of the nanoparticle dispersion reduced the zeta-potential from +61 mV at pH 7 to −51 mV at pH 10.5. Coating the CIGS nanoparticles with PSS (CIGS-PSS produced a stable dispersion in water with −56.9 mV zeta-potential. Thin films of oppositely charged CIGS nanoparticles (CIGS/CIGS, CIGS nanoparticles and PSS (CIGS/PSS, and PSS-coated CIGS nanoparticles and polyethylenimine (CIGS-PSS/PEI were constructed through the LbL nanoassembly. Film thickness and resistivity of each bilayer of the films were measured, and photoelectric properties of the films were studied for solar cell applications. Solar cell devices fabricated with a 219 nm CIGS film, when illuminated by 50 W light-source, produced 0.7 V open circuit voltage and 0.3 mA/cm2 short circuit current density.

  6. Performance of Indium Gallium Zinc Oxide Thin-Film Transistors in Saline Solution

    Science.gov (United States)

    Gupta, S.; Lacour, S. P.

    2016-06-01

    Transistors are often envisioned as alternative transducing devices to microelectrodes to communicate with the nervous system. Independently of the selected technology, the transistors should have reliable performance when exposed to physiological conditions (37°C, 5% CO2). Here, we report on the reliable performance of parylene encapsulated indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) after prolonged exposure to phosphate buffer saline solution in an incubator. The encapsulated IGZO TFTs (W/L = 500 μm/20 μm) have an ON/OFF current ratio of 107 and field effect mobility of 8.05 ± 0.78 cm2/Vs. The transistors operate within 4 V; their threshold voltages and subthreshold slope are ~1.9 V and 200 mV/decade, respectively. After weeks immersed in saline solution and at 37°C, we did not observe any significant deterioration in the transistors' performance. The long-term stability of IGZO transistors at physiological conditions is a promising result in the direction of metal oxide bioelectronics.

  7. Further studies of the anodic dissolution in sodium chloride electrolyte of aluminium alloys containing tin and gallium

    Science.gov (United States)

    Nestoridi, Maria; Pletcher, Derek; Wharton, Julian A.; Wood, Robert J. K.

    As part of a programme to develop a high power density, Al/air battery with a NaCl brine electrolyte, the high rate dissolution of an aluminium alloy containing tin and gallium was investigated in a small volume cell. The objective was to define the factors that limit aluminium dissolution in condition that mimic a high power density battery. In a cell with a large ratio of aluminium alloy to electrolyte, over a range of current densities the extent of dissolution was limited to ∼1000 C cm -2 of anode surface by a thick layer of loosely bound, crystalline deposit on the Al alloy anode formed by precipitation from solution. This leads to a large increase in impedance and acts as a barrier to transport of ions.

  8. Further studies of the anodic dissolution in sodium chloride electrolyte of aluminium alloys containing tin and gallium

    Energy Technology Data Exchange (ETDEWEB)

    Nestoridi, Maria; Pletcher, Derek [The School of Chemistry, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom); Wharton, Julian A.; Wood, Robert J.K. [School of Engineering Sciences, The University, Southampton SO17 1BJ (United Kingdom)

    2009-09-05

    As part of a programme to develop a high power density, Al/air battery with a NaCl brine electrolyte, the high rate dissolution of an aluminium alloy containing tin and gallium was investigated in a small volume cell. The objective was to define the factors that limit aluminium dissolution in condition that mimic a high power density battery. In a cell with a large ratio of aluminium alloy to electrolyte, over a range of current densities the extent of dissolution was limited to {proportional_to}1000 C cm{sup -2} of anode surface by a thick layer of loosely bound, crystalline deposit on the Al alloy anode formed by precipitation from solution. This leads to a large increase in impedance and acts as a barrier to transport of ions. (author)

  9. Evaluation of critical materials for five advanced design photovoltaic cells with an assessment of indium and gallium

    Energy Technology Data Exchange (ETDEWEB)

    Watts, R.L.; Gurwell, W.E.; Jamieson, W.M.; Long, L.W.; Pawlewicz, W.T.; Smith, S.A.; Teeter, R.R.

    1980-05-01

    The objective of this study is to identify potential material supply constraints due to the large-scale deployment of five advanced photovoltaic (PV) cell designs, and to suggest strategies to reduce the impacts of these production capacity limitations and potential future material shortages. This report presents the results of the screening of the five following advanced PV cell designs: polycrystalline silicon, amorphous silicon, cadmium sulfide/copper sulfide frontwall, polycrystalline gallium arsenide MIS, and advanced concentrator-500X. Each of these five cells is screened individually assuming that they first come online in 1991, and that 25 GWe of peak capacity is online by the year 2000. A second computer screening assumes that each cell first comes online in 1991 and that each cell has 5 GWe of peak capacity by the year 2000, so that the total online cpacity for the five cells is 25 GWe. Based on a review of the preliminary basline screening results, suggestions were made for varying such parameters as the layer thickness, cell production processes, etc. The resulting PV cell characterizations were then screened again by the CMAP computer code. Earlier DOE sponsored work on the assessment of critical materials in PV cells conclusively identtified indium and gallium as warranting further investigation as to their availability. Therefore, this report includes a discussion of the future availability of gallium and indium. (WHK)

  10. Synthesis of Two New Group 13 Benzoato-Chloro Complexes: A Structural Study of Gallium and Indium Chelating Carboxylates

    Science.gov (United States)

    Duraj, Stan A.; Hepp, Aloysius F.; Woloszynek, Robert; Protasiewicz, John D.; Dequeant, Michael; Ren, Tong

    2010-01-01

    Two new heteroleptic chelated-benzoato gallium (III) and indium (III) complexes have been prepared and structurally characterized. The molecular structures of [GaCl2(4-Mepy)2(O2CPh)]4-Mepy (1) and [InCl(4-Mepy)2(O2CPh)2]4-Mepy (2) have been determined by single-crystal x-ray diffraction. The gallium compound (1) is a distorted octahedron with cis-chloride ligands co-planar with the chelating benzoate and the 4-methylpyridines trans to each other. This is the first example of a Ga(III) structure with a chelating benzoate. The indium compound (2) is a distorted pentagonal bipyramid with two chelating benzoates, one 4-methylpyridine in the plane and a chloride trans to the other 4-methylpyridine. The indium bis-benzoate is an unusual example of a seven-coordinate structure with classical ligands. Both complexes, which due to the chelates, could also be described as pseudo-trigonal bipyramidal, include a three-bladed motif with three roughly parallel aromatic rings that along with a solvent of crystallization and electron-withdrawing chloride ligand(s) stabilize the solid-state structures.

  11. Synthesis, Characterization, and Processing of Copper, Indium, and Gallium Dithiocarbamates for Energy Conversion Applications

    Science.gov (United States)

    Duraj, S. A.; Duffy, N. V.; Hepp, A. F.; Cowen, J. E.; Hoops, M. D.; Brothrs, S. M.; Baird, M. J.; Fanwick, P. E.; Harris, J. D.; Jin, M. H.-C.

    2009-01-01

    Ten dithiocarbamate complexes of indium(III) and gallium(III) have been prepared and characterized by elemental analysis, infrared spectra and melting point. Each complex was decomposed thermally and its decomposition products separated and identified with the combination of gas chromatography/mass spectrometry. Their potential utility as photovoltaic materials precursors was assessed. Bis(dibenzyldithiocarbamato)- and bis(diethyldithiocarbamato)copper(II), Cu(S2CN(CH2C6H5)2)2 and Cu(S2CN(C2H5)2)2 respectively, have also been examined for their suitability as precursors for copper sulfides for the fabrication of photovoltaic materials. Each complex was decomposed thermally and the products analyzed by GC/MS, TGA and FTIR. The dibenzyl derivative complex decomposed at a lower temperature (225-320 C) to yield CuS as the product. The diethyl derivative complex decomposed at a higher temperature (260-325 C) to yield Cu2S. No Cu containing fragments were noted in the mass spectra. Unusual recombination fragments were observed in the mass spectra of the diethyl derivative. Tris(bis(phenylmethyl)carbamodithioato-S,S'), commonly referred to as tris(N,N-dibenzyldithiocarbamato)indium(III), In(S2CNBz2)3, was synthesized and characterized by single crystal X-ray crystallography. The compound crystallizes in the triclinic space group P1(bar) with two molecules per unit cell. The material was further characterized using a novel analytical system employing the combined powers of thermogravimetric analysis, gas chromatography/mass spectrometry, and Fourier transform infrared (FT-IR) spectroscopy to investigate its potential use as a precursor for the chemical vapor deposition (CVD) of thin film materials for photovoltaic applications. Upon heating, the material thermally decomposes to release CS2 and benzyl moieties in to the gas phase, resulting in bulk In2S3. Preliminary spray CVD experiments indicate that In(S2CNBz2)3 decomposed on a Cu substrate reacts to produce

  12. Can the structure of amorphous indium gallium zinc oxide be described in terms of a few polyhedral motifs?

    OpenAIRE

    Divya; Prasad, R; Deepak

    2016-01-01

    The coordination polyhedra around the cations are the building blocks of ionic solids. In context of amorphous InGaZn oxide (a-IGZO), even though the coordination polyhedra are irregularly arranged, it will be beneficial to identify them. In this work, we address the questions, (a) is it possible to classify all the polyhedra that occur in a-IGZO into only a few distinct groups? and (b) are these the same polyhedral motifs as those observed in the crystalline indium gallium zinc oxide (c-IGZO...

  13. Synthesis of Cu-Poor Copper-Indium-Gallium-Diselenide Nanoparticles by Solvothermal Route for Solar Cell Applications

    OpenAIRE

    Chung Ping Liu; Ming Wei Chang; Chuan Lung Chuang; Nien Po Chen

    2014-01-01

    Copper-indium-gallium-diselenide (CIGS) thin films were fabricated using precursor nanoparticle ink and sintering technology. The precursor was a Cu-poor quaternary compound with constituent ratios of Cu/(In+Ga)=0.603, Ga/(In+Ga)=0.674, and Se/(Cu+In+Ga)=1.036. Cu-poor CIGS nanoparticles of chalcopyrite for solar cells were successfully synthesized using a relatively simple and convenient elemental solvothermal route. After a fixed reaction time of 36 h at 180°C, CIGS nanocrystals with diamet...

  14. Blade-coated sol-gel indium-gallium-zinc-oxide for inverted polymer solar cell

    Science.gov (United States)

    Lee, Yan-Huei; Tsai, Pei-Ting; Chang, Chia-Ju; Meng, Hsin-Fei; Horng, Sheng-Fu; Zan, Hsiao-Wen; Lin, Hung-Cheng; Liu, Hung-Chuan; Tseng, Mei-Rurng; Yeh, Han-Cheng

    2016-11-01

    The inverted organic solar cell was fabricated by using sol-gel indium-gallium-zinc-oxide (IGZO) as the electron-transport layer. The IGZO precursor solution was deposited by blade coating with simultaneous substrate heating at 120 °C from the bottom and hot wind from above. Uniform IGZO film of around 30 nm was formed after annealing at 400 °C. Using the blend of low band-gap polymer poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b')dithiophene)-2,6-diyl-alt- (4-(2-ethylhexanoyl)-thieno [3,4-b]thiophene-)-2-6-diyl)] (PBDTTT-C-T) and [6,6]-Phenyl C71 butyric acid methyl ester ([70]PCBM) as the active layer for the inverted organic solar cell, an efficiency of 6.2% was achieved with a blade speed of 180 mm/s for the IGZO. The efficiency of the inverted organic solar cells was found to depend on the coating speed of the IGZO films, which was attributed to the change in the concentration of surface OH groups. Compared to organic solar cells of conventional structure using PBDTTT-C-T: [70]PCBM as active layer, the inverted organic solar cells showed significant improvement in thermal stability. In addition, the chemical composition, as well as the work function of the IGZO film at the surface and inside can be tuned by the blade speed, which may find applications in other areas like thin-film transistors.

  15. Nanoscale Synthesis of Two Porphyrin-Based MOFs with Gallium and Indium.

    Science.gov (United States)

    Rhauderwiek, Timo; Waitschat, Steve; Wuttke, Stefan; Reinsch, Helge; Bein, Thomas; Stock, Norbert

    2016-06-01

    Two porphyrin-based metal-organic frameworks (MOFs) containing gallium or indium, [Ga2(OH)2(H2TCPP)]·3DMF·3H2O (Ga-PMOF) and [In2(OH)2(H2TCPP)]·3DMF·4H2O (In-PMOF) (H6TCPP = 4-tetracarboxyphenylporphyrin), were discovered using high-throughput methods. The structure was refined by the Rietveld-method starting from the structure model of Al-PMOF, [Al2(OH)2(H2TCPP)]. The new PMOFs exhibit BET surface areas between 1150 and 1400 m(2) g(-1) and are also porous toward CO2 (Ga-PMOF, 15.2 wt %; In-PMOF, 12.9 wt %). They are thermally stable in air up to 330 °C, but show limited chemical stabilities toward acids and bases. In order to achieve size control, different synthesis routes were investigated, i.e., batch synthesis at different temperatures (yield: In-PMOF-bs-th 96%, Ga-PMOF-bs-th 87%), ultrasound-assisted synthesis (yield: In-PMOF-bs-us 85%), and continuous-flow synthesis (yield: Ga-PMOF-cf 71%). By using these different methods we could control the nucleation rate and the crystal size. The crystal sizes were found to vary about 60 to 160 nm and 70 to 130 nm for Ga- and In-PMOF, respectively, which was proven by dynamic light scattering (DLS), powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) measurements.

  16. Soft X-ray absorption spectroscopy investigation of the surface chemistry and treatments of copper indium gallium diselenide (CIGS)

    Energy Technology Data Exchange (ETDEWEB)

    Schwartz, Craig; Nordlund, Dennis; Sokaras, Dimosthenis; Contreras, Miguel; Weng, Tsu-Chien; Mansfield, Lorelle; Hurst, Katherine E.; Dameron, Arrelaine; Ramanathan, Kannan; Prendergast, David; Christensen, Steven T.

    2017-02-01

    The surface and near surface structure of copper-indium-gallium-selenide (CIGS) absorber layers is integral to the producing a high-quality photovoltaic junction. By using X-ray absorption spectroscopy (XAS) and monitoring multiple elemental absorption edges with both theory and experiment, we are able to identify several features of the surface of CIGS as a function of composition and surface treatments. The XAS data shows trends in the near surface region of oxygen, copper, indium and gallium species as the copper content is varied in the films. The oxygen surface species are also monitored through a series of experiments that systematically investigates the effects of water and various solutions of: ammonium hydroxide, cadmium sulfate, and thiourea. These being components of cadmium sulfide chemical bath deposition (CBD). Characteristics of the CBD are correlated with a restorative effect that produces as normalized, uniform surface chemistry as measured by XAS. This surface chemistry is found in CIGS solar cells with excellent power conversion efficiency (<19%). The results provide new insight for CIGS processing strategies that seek to replace CBD and/or cadmium sulfide.

  17. Aluminium, gallium, and molybdenum toxicity to the tropical marine microalga Isochrysis galbana.

    Science.gov (United States)

    Trenfield, Melanie A; van Dam, Joost W; Harford, Andrew J; Parry, David; Streten, Claire; Gibb, Karen; van Dam, Rick A

    2015-08-01

    There is a shortage of established chronic toxicity test methods for assessing the toxicity of contaminants to tropical marine organisms. The authors tested the suitability of the tropical microalga Isochrysis galbana for use in routine ecotoxicology and assessed the effects of 72-h exposures to copper (Cu, a reference toxicant), aluminium (Al), gallium (Ga), and molybdenum (Mo), key metals of alumina refinery discharge, on the growth of I. galbana at 3 temperatures: 24 °C, 28 °C, and 31 °C. The sensitivity of both I. galbana and the test method was validated by the response to Cu exposure, with 10% and 50% effect concentrations (EC10 and EC50) of 2.5 μg/L and 18 μg/L, respectively. The EC10 and EC50 values for total Al at 28 °C were 640 μg/L and 3045 μg/L, respectively. The toxicity of both Cu and Al at 24 °C and 31 °C was similar to that at 28 °C. There was no measurable toxicity from dissolved Ga exposures of up to 6000 μg/L or exposures to dissolved Mo of up to 9500 μg/L. Solubility limits at 28 °C for the dissolved fractions (7000 μg/L Ga, and >6000 μg/L Mo. In test solutions containing >650 μg/L total Al, dissolved and precipitated forms of Al were present, with precipitated Al becoming more dominant as total Al increased. The test method proved suitable for routine ecotoxicology, with I. galbana showing sensitivity to Cu but Al, Ga, and Mo exhibiting little to no toxicity to this species.

  18. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

    NARCIS (Netherlands)

    Niang, K.M.; Barquinha, P.M.C.; Martins, R.F.P.; Cobb, B.; Powell, M.J.; Flewitt, A.J.

    2016-01-01

    Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analyse

  19. Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application

    NARCIS (Netherlands)

    Tripathi, A.K.; Smits, E.C.P.; Putten, J.B.P.H. van der; Neer, M. van; Myny, K.; Nag, M.; Steudel, S.; Vicca, P.; O'Neill, K.; Veenendaal, E. van; Genoe, G.; Heremans, P.; Gelinck, G.H.

    2011-01-01

    In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 µm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The

  20. A study on the optics of copper indium gallium (di)selenide (CIGS) solar cells with ultra-thin absorber layers

    NARCIS (Netherlands)

    Xu, M.; Wachters, A.J.H.; Van Deelen, J.; Mourad, M.C.D.; Buskens, P.J.P.

    2014-01-01

    We present a systematic study of the effect of variation of the zinc oxide (ZnO) and copper indium gallium (di)selenide (CIGS) layer thickness on the absorption characteristics of CIGS solar cells using a simulation program based on finite element method (FEM). We show that the absorption in the CIG

  1. Electrical conduction processes in as-deposited indium phthalocyanine chloride thin films using gold and aluminium electrode combination

    Energy Technology Data Exchange (ETDEWEB)

    Samuel, Mammen; Menon, C S; Unnikrishnan, N V [School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam-686 560, Kerala (India)

    2006-01-11

    Sandwich structures of the type (Au-InPcCl-Al) have been fabricated by successive vacuum deposition of indium phthalocyanine chloride (InPcCl) thin films and aluminium (Al) fingers onto Ohmic gold (Au) electrodes on glass substrates. Device characteristics of as-deposited Au/InPcCl/Al are obtained and found to show rectification properties. Current density-voltage characteristics under forward bias (aluminium electrode negative) are found to be due to Ohmic conduction at lower voltages. At higher voltages there is space charge limited conductivity (SCLC) controlled by an exponential trapping distribution above the valence edge. Transport properties of the material at ambient temperature have been obtained from the analysis of the samples in the Ohmic and SCLC regions. Under the reverse bias, Schottky emission is identified at lower voltages.

  2. Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

    Science.gov (United States)

    Jo, Kwang-Won; Cho, Won-Ju

    2014-11-01

    In this study, we evaluated the effects of microwave irradiation (MWI) post-deposition-annealing (PDA) treatment on the gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) and compared the results with a conventional thermal annealing PDA treatment. The MWI-PDA-treated a-IGZO TFTs exhibited enhanced electrical performance as well as improved long-term stability with increasing microwave power. The positive turn-on voltage shift (ΔVON) as a function of stress time with positive bias and varying temperature was precisely modeled on a stretched-exponential equation, suggesting that charge trapping is a dominant mechanism in the instability of MWI-PDA-treated a-IGZO TFTs. The characteristic trapping time and average effective barrier height for electron transport indicate that the MWI-PDA treatment effectively reduces the defects in a-IGZO TFTs, resulting in a superior resistance against gate bias stress.

  3. High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

    KAUST Repository

    Nayak, Pradipta K.

    2012-05-16

    Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors(TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.

  4. A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors

    Science.gov (United States)

    Moldovan, Oana; Castro-Carranza, Alejandra; Cerdeira, Antonio; Estrada, Magali; Barquinha, Pedro; Martins, Rodrigo; Fortunato, Elvira; Miljakovic, Slobodan; Iñiguez, Benjamin

    2016-12-01

    An advanced compact and analytical drain current model for the amorphous gallium indium zinc oxide (GIZO) thin film transistors (TFTs) is proposed. Its output saturation behavior is improved by introducing a new asymptotic function. All model parameters were extracted using an adapted version of the Universal Method and Extraction Procedure (UMEM) applied for the first time for GIZO devices in a simple and direct form. We demonstrate the correct behavior of the model for negative VDS, a necessity for a complete compact model. In this way we prove the symmetry of source and drain electrodes and extend the range of applications to both signs of VDS. The model, in Verilog-A code, is implemented in Electronic Design Automation (EDA) tools, such as Smart Spice, and compared with measurements of TFTs. It describes accurately the experimental characteristics in the whole range of GIZO TFTs operation, making the model suitable for the design of circuits using these types of devices.

  5. Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.

    Science.gov (United States)

    Everaerts, Ken; Zeng, Li; Hennek, Jonathan W; Camacho, Diana I; Jariwala, Deep; Bedzyk, Michael J; Hersam, Mark C; Marks, Tobin J

    2013-11-27

    Solution-processed amorphous oxide semiconductors (AOSs) are emerging as important electronic materials for displays and transparent electronics. We report here on the fabrication, microstructure, and performance characteristics of inkjet-printed, low-temperature combustion-processed, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) grown on solution-processed hafnia self-assembled nanodielectrics (Hf-SANDs). TFT performance for devices processed below 300 °C includes >4× enhancement in electron mobility (μFE) on Hf-SAND versus SiO2 or ALD-HfO2 gate dielectrics, while other metrics such as subthreshold swing (SS), current on:off ratio (ION:IOFF), threshold voltage (Vth), and gate leakage current (Ig) are unchanged or enhanced. Thus, low voltage IGZO/SAND TFT operation (nanodielectrics.

  6. One-pot electrodeposition, characterization and photoactivity of stoichiometric copper indium gallium diselenide (CIGS) thin films for solar cells.

    Science.gov (United States)

    Harati, Mohammad; Jia, Jia; Giffard, Kévin; Pellarin, Kyle; Hewson, Carly; Love, David A; Lau, Woon Ming; Ding, Zhifeng

    2010-12-14

    Herein we report the one-pot electrodeposition of copper indium gallium diselenide, CuIn(1-x)Ga(x)Se(2) (CIGS), thin films as the p-type semiconductor in an ionic liquid medium consisting of choline chloride/urea eutectic mixture known as Reline. The thin films were characterized by scanning electron microscopy with energy dispersive X-ray analysis, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman microspectroscopy, and UV-visible spectroscopy. Based on the results of the characterizations, the electrochemical bath recipe was optimized to obtain stoichiometric CIGS films with x between 0.2 and 0.4. The chemical activity and photoreactivity of the optimized CIGS films were found to be uniform using scanning electrochemical microscopy and scanning photoelectrochemical microscopy. Low-cost stoichiometric CIGS thin films in one-pot were successfully fabricated.

  7. Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots

    KAUST Repository

    Elafandy, Rami T.

    2011-12-01

    Comparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.

  8. Ecotoxicological assessment of solar cell leachates: Copper indium gallium selenide (CIGS) cells show higher activity than organic photovoltaic (OPV) cells

    Energy Technology Data Exchange (ETDEWEB)

    Brun, Nadja Rebecca [University of Applied Sciences and Arts Northwestern Switzerland, School of Life Sciences, Gründenstrasse 40, CH-4132 Muttenz (Switzerland); Institute of Biogeochemistry and Pollutant Dynamics, ETH Zurich, Universitätsstrasse 16, CH-8092 Zürich (Switzerland); Wehrli, Bernhard [Institute of Biogeochemistry and Pollutant Dynamics, ETH Zurich, Universitätsstrasse 16, CH-8092 Zürich (Switzerland); Fent, Karl, E-mail: karl.fent@fhnw.ch [University of Applied Sciences and Arts Northwestern Switzerland, School of Life Sciences, Gründenstrasse 40, CH-4132 Muttenz (Switzerland); Institute of Biogeochemistry and Pollutant Dynamics, ETH Zurich, Universitätsstrasse 16, CH-8092 Zürich (Switzerland)

    2016-02-01

    Despite the increasing use of photovoltaics their potential environmental risks are poorly understood. Here, we compared ecotoxicological effects of two thin-film photovoltaics: established copper indium gallium selenide (CIGS) and organic photovoltaic (OPV) cells. Leachates were produced by exposing photovoltaics to UV light, physical damage, and exposure to environmentally relevant model waters, representing mesotrophic lake water, acidic rain, and seawater. CIGS cell leachates contained 583 μg L{sup −1} molybdenum at lake water, whereas at acidic rain and seawater conditions, iron, copper, zinc, molybdenum, cadmium, silver, and tin were present up to 7219 μg L{sup −1}. From OPV, copper (14 μg L{sup −1}), zinc (87 μg L{sup −1}) and silver (78 μg L{sup −1}) leached. Zebrafish embryos were exposed until 120 h post-fertilization to these extracts. CIGS leachates produced under acidic rain, as well as CIGS and OPV leachates produced under seawater conditions resulted in a marked hatching delay and increase in heart edema. Depending on model water and solar cell, transcriptional alterations occurred in genes involved in oxidative stress (cat), hormonal activity (vtg1, ar), metallothionein (mt2), ER stress (bip, chop), and apoptosis (casp9). The effects were dependent on the concentrations of cationic metals in leachates. Addition of ethylenediaminetetraacetic acid protected zebrafish embryos from morphological and molecular effects. Our study suggests that metals leaching from damaged CIGS cells, may pose a potential environmental risk. - Highlights: • Photovoltaics may be disposed in the environment after usage. • Copper indium gallium selenide (CIGS) and organic (OPV) cells were compared. • Morphological and molecular effects were assessed in zebrafish embryos. • Environmental condition affected metal leaching and ecotoxicological activity. • Damaged CIGS cells pose higher risk to the environment than OPV cells.

  9. Measuring systolic ankle and toe pressure using the strain gauge technique--a comparison study between mercury and indium-gallium strain gauges

    DEFF Research Database (Denmark)

    Broholm, Rikke; Wiinberg, Niels; Simonsen, Lene

    2014-01-01

    devices was performed for both toe and ankle level. RESULTS: A total of 53 patients were included (36 male). Mean age was 69 (range, 45-92 years). Mean pressures at toe and ankle level with the mercury and the indium-gallium strain gauges were 77 (range, 0-180) mm Hg and 113 (range, 15-190) mm Hg...... ankle and toe pressure for the indium-gallium strain gauge to replace the mercury strain gauge.......BACKGROUND: Measurement of the ankle and toe pressures are often performed using a plethysmograph, compression cuffs and a strain gauge. Usually, the strain gauge contains mercury but other alternatives exist. From 2014, the mercury-containing strain gauge will no longer be available...

  10. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  11. Ecotoxicological assessment of solar cell leachates: Copper indium gallium selenide (CIGS) cells show higher activity than organic photovoltaic (OPV) cells.

    Science.gov (United States)

    Brun, Nadja Rebecca; Wehrli, Bernhard; Fent, Karl

    2016-02-01

    Despite the increasing use of photovoltaics their potential environmental risks are poorly understood. Here, we compared ecotoxicological effects of two thin-film photovoltaics: established copper indium gallium selenide (CIGS) and organic photovoltaic (OPV) cells. Leachates were produced by exposing photovoltaics to UV light, physical damage, and exposure to environmentally relevant model waters, representing mesotrophic lake water, acidic rain, and seawater. CIGS cell leachates contained 583 μg L(-1) molybdenum at lake water, whereas at acidic rain and seawater conditions, iron, copper, zinc, molybdenum, cadmium, silver, and tin were present up to 7219 μg L(-1). From OPV, copper (14 μg L(-1)), zinc (87 μg L(-1)) and silver (78 μg L(-1)) leached. Zebrafish embryos were exposed until 120 h post-fertilization to these extracts. CIGS leachates produced under acidic rain, as well as CIGS and OPV leachates produced under seawater conditions resulted in a marked hatching delay and increase in heart edema. Depending on model water and solar cell, transcriptional alterations occurred in genes involved in oxidative stress (cat), hormonal activity (vtg1, ar), metallothionein (mt2), ER stress (bip, chop), and apoptosis (casp9). The effects were dependent on the concentrations of cationic metals in leachates. Addition of ethylenediaminetetraacetic acid protected zebrafish embryos from morphological and molecular effects. Our study suggests that metals leaching from damaged CIGS cells, may pose a potential environmental risk.

  12. Saddle-like deformation in a dielectric elastomer actuator embedded with liquid-phase gallium-indium electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Wissman, J., E-mail: jwissman@andrew.cmu.edu [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Finkenauer, L. [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Deseri, L. [DICAM, Department of Mechanical, Civil and Environmental Engineering, University of Trento, via Mesiano 77 38123 Trento (Italy); TMHRI-Department of Nanomedicine, The Methodist Hospital Research Institute, 6565 Fannin St., MS B-490 Houston, Texas 77030 (United States); Mechanics, Materials and Computing Center, CEE and ME-CIT, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Majidi, C. [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Robotics Institute and Department of Civil and Environmental Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

    2014-10-14

    We introduce a dielectric elastomer actuator (DEA) composed of liquid-phase Gallium-Indium (GaIn) alloy electrodes embedded between layers of poly(dimethylsiloxane) (PDMS) and examine its mechanics using a specialized elastic shell theory. Residual stresses in the dielectric and sealing layers of PDMS cause the DEA to deform into a saddle-like geometry (Gaussian curvature K<0). Applying voltage Φ to the liquid metal electrodes induces electrostatic pressure (Maxwell stress) on the dielectric and relieves some of the residual stress. This reduces the longitudinal bending curvature and corresponding angle of deflection ϑ. Treating the elastomer as an incompressible, isotropic, NeoHookean solid, we develop a theory based on the principle of minimum potential energy to predict the principal curvatures as a function of Φ. Based on this theory, we predict a dependency of ϑ on Φ that is in strong agreement with experimental measurements performed on a GaIn-PDMS composite. By accurately modeling electromechanical coupling in a soft-matter DEA, this theory can inform improvements in design and fabrication.

  13. Synthesis of Cu-Poor Copper-Indium-Gallium-Diselenide Nanoparticles by Solvothermal Route for Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Chung Ping Liu

    2014-01-01

    Full Text Available Copper-indium-gallium-diselenide (CIGS thin films were fabricated using precursor nanoparticle ink and sintering technology. The precursor was a Cu-poor quaternary compound with constituent ratios of Cu/(In+Ga=0.603, Ga/(In+Ga=0.674, and Se/(Cu+In+Ga=1.036. Cu-poor CIGS nanoparticles of chalcopyrite for solar cells were successfully synthesized using a relatively simple and convenient elemental solvothermal route. After a fixed reaction time of 36 h at 180°C, CIGS nanocrystals with diameters in the range of 20–70 nm were observed. The nanoparticle ink was fabricated by mixing CIGS nanoparticles, a solvent, and an organic polymer. Analytical results reveal that the Cu-poor CIGS absorption layer prepared from a nanoparticle-ink polymer by sintering has a chalcopyrite structure and a favorable composition. For this kind of sample, its mole ratio of Cu : In : Ga : Se is equal to 0.617 : 0.410 : 0.510 : 2.464 and related ratios of Ga/(In+Ga and Cu/(In+Ga are 0.554 and 0.671, respectively. Under the condition of standard air mass 1.5 global illumination, the conversion efficiency of the solar cell fabricated by this kind of sample is 4.05%.

  14. Low-Temperature Photochemically Activated Amorphous Indium-Gallium-Zinc Oxide for Highly Stable Room-Temperature Gas Sensors.

    Science.gov (United States)

    Jaisutti, Rawat; Kim, Jaeyoung; Park, Sung Kyu; Kim, Yong-Hoon

    2016-08-10

    We report on highly stable amorphous indium-gallium-zinc oxide (IGZO) gas sensors for ultraviolet (UV)-activated room-temperature detection of volatile organic compounds (VOCs). The IGZO sensors fabricated by a low-temperature photochemical activation process and exhibiting two orders higher photocurrent compared to conventional zinc oxide sensors, allowed high gas sensitivity against various VOCs even at room temperature. From a systematic analysis, it was found that by increasing the UV intensity, the gas sensitivity, response time, and recovery behavior of an IGZO sensor were strongly enhanced. In particular, under an UV intensity of 30 mW cm(-2), the IGZO sensor exhibited gas sensitivity, response time and recovery time of 37%, 37 and 53 s, respectively, against 750 ppm concentration of acetone gas. Moreover, the IGZO gas sensor had an excellent long-term stability showing around 6% variation in gas sensitivity over 70 days. These results strongly support a conclusion that a low-temperature solution-processed amorphous IGZO film can serve as a good candidate for room-temperature VOCs sensors for emerging wearable electronics.

  15. Derived reference doses for three compounds used in the photovoltaics industry: Copper indium diselenide, copper gallium diselenide, and cadmium telluride

    Energy Technology Data Exchange (ETDEWEB)

    Moskowitz, P.D.; Bernholc, N.; DePhillips, M.P.; Viren, J.

    1995-07-06

    Polycrystalline thin-film photovoltaic modules made from copper indium diselenide (CIS), copper gallium diselenide (CGS), and cadmium telluride (CdTe) arc nearing commercial development. A wide range of issues are being examined as these materials move from the laboratory to large-scale production facilities to ensure their commercial success. Issues of traditional interest include module efficiency, stability and cost. More recently, there is increased focus given to environmental, health and safety issues surrounding the commercialization of these same devices. An examination of the toxicological properties of these materials, and their chemical parents is fundamental to this discussion. Chemicals that can present large hazards to human health or the environment are regulated often more strictly than those that are less hazardous. Stricter control over how these materials are handled and disposed can increase the costs associated with the production and use of these modules dramatically. Similarly, public perception can be strongly influenced by the inherent biological hazard that these materials possess. Thus, this report: presents a brief background tutorial on how toxicological data are developed and used; overviews the toxicological data available for CIS, CGS and CdTe; develops ``reference doses`` for each of these compounds; compares the reference doses for these compounds with those of their parents; discusses the implications of these findings to photovoltaics industry.

  16. Development of a unique laboratory standard: Indium gallium arsenide detector for the 500-1700 nm spectral region

    Science.gov (United States)

    1987-01-01

    A planar (5 mm diameter) indium gallium arsenide detector having a high (greater than 50 pct) quantum efficiency from the visible into the infrared spectrum (500 to 1700 nm) was fabricated. Quantum efficiencies as high as 37 pct at 510 nm, 58 pct at 820 nm and 62 pct at 1300 nm and 1550 nm were measured. A planar InP/InGaAs detector structure was also fabricated using vapor phase epitaxy to grow device structures with 0, 0.2, 0.4 and 0.6 micrometer thick InP caps. Quantum efficiency was studied as a function of cap thickness. Conventional detector structures were also used by completely etching off the InP cap after zinc diffusion. Calibrated quantum efficiencies were measured. Best results were obtained with devices whose caps were completely removed by etching. Certain problems still remain with these detectors including non-uniform shunt resistance, reproducibility, contact resistance and narrow band anti-reflection coatings.

  17. Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy

    Science.gov (United States)

    Chen-Fei, Wu; Yun-Feng, Chen; Hai, Lu; Xiao-Ming, Huang; Fang-Fang, Ren; Dun-Jun, Chen; Rong, Zhang; You-Dou, Zheng

    2016-05-01

    In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain (S/D) series resistance in operating amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metal-semiconductor junction. Project supported by the Key Industrial R&D Program of Jiangsu Province, China (Grant No. BE2015155), the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. 021014380033).

  18. Comparative study of highly dense aluminium- and gallium-doped zinc oxide transparent conducting sol–gel thin films

    Indian Academy of Sciences (India)

    Naji Al Dahoudi

    2014-10-01

    Transparent conducting aluminium- and gallium-doped zinc oxide (AZO and GZO) layers have been deposited by spin coating on glass substrates. The coatings have been sintered in air at 450 °C for 30 min and then post-annealed at 350 °C in a reducing atmosphere for 30 min. The electrical, optical and morphological properties of both coatings have been studied and compared. The conventional sols lead to very thin coating, typically 24 nm for a single layer of AZO and 32 nm of GZO with electrical resistivity of 0.72 and 0.35 cm, respectively. The value however, drastically decreases down to a minimum of 2.6 × 10-2 cm for AZO and 1.76 × 10-2 cm for GZO, when five multilayer coatings are made. The origin of these differences is due to the different morphology of the coatings showing different electron scattering process. The GZO sol leads to denser smoother structure (porosity of 5%) layers with an average roughness of 2.76 Å, while the AZO coating is formed by a more porous assembly (porosity of 20%) with an average roughness of 3.46 Å. Both coatings exhibit high transparency ( > 85%) in the visible spectrum range with a slight shift of the absorption energy gap.

  19. Chemical stability and electrical performance of dual-active-layered zinc-tin-oxide/indium-gallium-zinc-oxide thin-film transistors using a solution process.

    Science.gov (United States)

    Kim, Chul Ho; Rim, You Seung; Kim, Hyun Jae

    2013-07-10

    We investigated the chemical stability and electrical properties of dual-active-layered zinc-tin-oxide (ZTO)/indium-gallium-zinc-oxide (IGZO) structures (DALZI) with the durability of the chemical damage. The IGZO film was easily corroded or removed by an etchant, but the DALZI film was effectively protected by the high chemical stability of ZTO. Furthermore, the electrical performance of the DALZI thin-film transistor (TFT) was improved by densification compared to the IGZO TFT owing to the passivation of the pin holes or pore sites and the increase in the carrier concentration due to the effect of Sn(4+) doping.

  20. Effect of Gallium and Indium Co-Substituting on Upconversion Properties of Er/Yb:Yttrium Aluminum Garnet Powders Prepared by the Co-Precipitation Method.

    Science.gov (United States)

    Zhang, Wei; Liang, Yun-Ling; Hu, Zheng-Fa; Feng, Zu-Yong; Lun, Ma; Zhang, Xiu-ping; Sheng, Xia; Liu, Qian; Luo, Jie

    2016-04-01

    Gallium and Indium co-substituted Yb, Er:YAG was fabricated through the chemical co-precipitation method. The formation process and structure of the Ga3+ and In3+ substituted phosphor powders were characterized by the X-ray diffraction, thermo-gravimetry analyzer, infrared spectra, and X-ray photoelectron spectroscopy, and the effects of Ga3+ and In3+ concentration on the luminescence properties were investigated by spectrum. The results showed that the blue shift occurred after the substitution of Ga3+ and In3+ for Al3+ in matrix, and the intensity of emission spectrum was affected by the concentration of Ga3+ and In3+.

  1. The 3-5 semiconductor solid solution single crystal growth. [low gravity float zone growth experiments using gallium indium antimonides and cadmium tellurides

    Science.gov (United States)

    Gertner, E. R.

    1980-01-01

    Techniques used for liquid and vapor phase epitaxy of gallium indium arsenide are described and the difficulties encountered are examined. Results show that the growth of bulk III-V solid solution single crystals in a low gravity environment will not have a major technological impact. The float zone technique in a low gravity environment is demonstrated using cadmium telluride. It is shown that this approach can result in the synthesis of a class of semiconductors that can not be grown in normal gravity because of growth problems rooted in the nature of their phase diagrams.

  2. Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Yao, Jianke, E-mail: yaojk@pkusz.edu.cn [School of Computer and Information Engineering, Shenzhen Graduate School of Peking University, Shenzhen 518055 (China); Gong, Li [Instrumental Analysis and Research Center, Sun Yat-Sen University, Guangzhou 10275 (China); Xie, Lei [School of Computer and Information Engineering, Shenzhen Graduate School of Peking University, Shenzhen 518055 (China); Zhang, Shengdong, E-mail: zhangsd@pku.edu.cn [School of Computer and Information Engineering, Shenzhen Graduate School of Peking University, Shenzhen 518055 (China); Institute of Microelectronics, Peking University, Beijing 100871 (China)

    2013-01-01

    The electrical and optical properties of direct current and radio frequency (RF) sputtered amorphous indium gallium zinc oxide (a-IGZO) films are compared. It is found that the RF sputtered a-IGZO films have better stoichiometry (In:Ga:Zn:O = 1:1:1:2.5–3.0), lower electrical conductivity (σ < 8 S/cm), higher refractive index (n = 1.9–2.0) and larger band gap (E{sub g} = 3.02–3.29 eV), and show less shift of Fermi level (△ E{sub F} ∼ 0.26 eV) and increased concentration of electrons (△ N{sub e} ∼ 10{sup 4}) in the conduction band with the reduction concentration of oxygen vacancy (V{sub O}). Although a-IGZO has intensively been studied for a semiconductor channel material of thin film transistors in next-generation flat panel displays, its fundamental material parameters have not been thoroughly reported. In this work, the work function (φ) of a-IGZO films is tested with the ultraviolet photoelectron spectroscopy. It is found that the φ of a-IGZO films is in the range of 4.0–5.0 eV depending on the V{sub O}. - Highlights: ► Amorphous InGaZnO{sub 4} (a-IGZO) films were prepared with different sputtering modes. ► Electrical and optical properties of the different films were compared. ► Fermi level (△E{sub F}) shift in a-IGZO films were tested by X-ray photoelectron spectroscopy. ► The relation of △E{sub F} with the properties of a-IGZO films were discussed. ► Work function was tested by ultraviolet photoelectron spectroscopy.

  3. Liquid gallium and the eutectic gallium indium (EGaIn) alloy: Dielectric functions from 1.24 to 3.1 eV by electrochemical reduction of surface oxides

    Science.gov (United States)

    Morales, Daniel; Stoute, Nicholas A.; Yu, Zhiyuan; Aspnes, David E.; Dickey, Michael D.

    2016-08-01

    Liquid metals based on gallium are promising materials for soft, stretchable, and shape reconfigurable electromagnetic devices. The behavior of these metals relates directly to the thicknesses of their surface oxide layers, which can be determined nondestructively by ellipsometry if their dielectric functions ɛ are known. This paper reports on the dielectric functions of liquid gallium and the eutectic gallium indium (EGaIn) alloy from 1.24 to 3.1 eV at room temperature, measured by spectroscopic ellipsometry. Overlayer-induced artifacts, a continuing problem in optical measurements of these highly reactive metals, are eliminated by applying an electrochemically reductive potential to the surface of the metal immersed in an electrolyte. This technique enables measurements at ambient conditions while avoiding the complications associated with removing overlayers in a vacuum environment. The dielectric responses of both metals are closely represented by the Drude model. The EGaIn data suggest that in the absence of an oxide the surface is In-enriched, consistent with the previous vacuum-based studies. Possible reasons for discrepancies with previous measurements are discussed.

  4. Development of wide-band gap indium gallium nitride solar cells for high-efficiency photovoltaics

    Science.gov (United States)

    Jani, Omkar K.

    Main objective of the present work is to develop wide-band gap InGaN solar cells in the 2.4--2.9 eV range that can be an integral component of photovoltaic devices to achieve efficiencies greater than 50%. The III-nitride semiconductor material system, which consists of InN, GaN, AlN and their alloys, offers a substantial potential in developing ultra-high efficiency photovoltaics mainly due to its wide range of direct-band gap, and other electronic, optical and mechanical properties. However, this novel InGaN material system poses challenges from theoretical, as well as technological standpoints, which are further extended into the performance of InGaN devices. In the present work, these challenges are identified and overcome individually to build basic design blocks, and later, optimized comprehensively to develop high-performance InGaN solar cells. One of the major challenges from the theoretical aspect arises due to unavailability of a suitable modeling program for InGaN solar cells. As spontaneous and piezoelectric polarization can substantially influence transport of carriers in the III-nitrides, these phenomena are studied and incorporated at a source-code level in the PC1D simulation program to accurately model InGaN solar cells. On the technological front, InGaN with indium compositions up to 30% (2.5 eV band gap) are developed for photovoltaic applications by controlling defects and phase separation using metal-organic chemical vapor deposition. InGaN with band gap of 2.5 eV is also successfully doped to achieve acceptor carrier concentration of 1018 cm-3. A robust fabrication scheme for III-nitride solar cells is established to increase reliability and yield; various schemes including interdigitated grid contact and current spreading contacts are developed to yield low-resistance Ohmic contacts for InGaN solar cells. Preliminary solar cells are developed using a standard design to optimize the InGaN material, where the band gap of InGaN is progressively

  5. Arsenic (III, V), indium (III), and gallium (III) toxicity to zebrafish embryos using a high-throughput multi-endpoint in vivo developmental and behavioral assay.

    Science.gov (United States)

    Olivares, Christopher I; Field, Jim A; Simonich, Michael; Tanguay, Robert L; Sierra-Alvarez, Reyes

    2016-04-01

    Gallium arsenide (GaAs), indium gallium arsenide (InGaAs) and other III/V materials are finding increasing application in microelectronic components. The rising demand for III/V-based products is leading to increasing generation of effluents containing ionic species of gallium, indium, and arsenic. The ecotoxicological hazard potential of these streams is unknown. While the toxicology of arsenic is comprehensive, much less is known about the effects of In(III) and Ga(III). The embryonic zebrafish was evaluated for mortality, developmental abnormalities, and photomotor response (PMR) behavior changes associated with exposure to As(III), As(V), Ga(III), and In(III). The As(III) lowest observable effect level (LOEL) for mortality was 500 μM at 24 and 120 h post fertilization (hpf). As(V) exposure was associated with significant mortality at 63 μM. The Ga(III)-citrate LOEL was 113 μM at 24 and 120 hpf. There was no association of significant mortality over the tested range of In(III)-citrate (56-900 μM) or sodium citrate (213-3400 μM) exposures. Only As(V) resulted in significant developmental abnormalities with LOEL of 500 μM. Removal of the chorion prior to As(III) and As(V) exposure was associated with increased incidence of mortality and developmental abnormality suggesting that the chorion may normally attenuate mass uptake of these metals by the embryo. Finally, As(III), As(V), and In(III) caused PMR hypoactivity (49-69% of control PMR) at 900-1000 μM. Overall, our results represent the first characterization of multidimensional toxicity effects of III/V ions in zebrafish embryos helping to fill a significant knowledge gap, particularly in Ga(III) and In(III) toxicology.

  6. Paraffin wax as a diluent for extraction and separation of trivalent gallium, indium, and thallium with 2,6-bis-(1′-phenyl-3′-methyl-5′- oxopyrazole-4′) pyridineacyl

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    A method is proposed for the extraction and separation of trivalent gallium, indium and thallium from their corre-sponding aqueous solutions at 65°C with 2, 6-bis-(l'-phenyl-3'-methyl-5'-oxopyrazole-4') pyridineacyl (H2PMBPPor H2A)using molten paraffin wax as a diluent. The values of pH 1/2 for extraction of gallium, indium and thallium are 2.62, 4.32 and4.93, respectively. Gallium can be extracted by H2PMBPP at a lower acid medium. The effect of solvent and the composi-tion of the extracted species are reported. And the thermodynamic data of the extraction are also obtained.

  7. Transparent multi-level-cell nonvolatile memory with dual-gate amorphous indium-gallium-zinc oxide thin-film transistors

    Science.gov (United States)

    Ahn, Min-Ju; Cho, Won-Ju

    2016-12-01

    A fully transparent, nonvolatile charge-trap-flash memory that is based on amorphous indium-gallium-zinc-oxide thin film transistors was fabricated with a dual gate (DG) structure for a multi-level-cell (MLC) application. A large memory window was obtained at a low program voltage in the DG read-operation mode owing to the capacitive-coupling effect between the front gate and the back gate. The MLC was implemented by using the DG read-operation mode with four highly stable levels, as follows: A large threshold-voltage difference >3.5 V per level was obtained under a low program voltage <14 V with a fast program speed of 1 ms. In contrast, the conventional single gate operation mode was incompatible with the MLC application.

  8. Low-frequency noise in amorphous indium-gallium-zinc oxide thin-film transistors with an inverse staggered structure and an SiO2 gate insulator

    Science.gov (United States)

    Park, Jae Chul; Lee, Ho-Nyeon

    2014-05-01

    We report the low-frequency noise (LFN) behavior of amorphous indium-gallium-zinc oxide thin-film transistors with an inverse staggered structure and an SiO2 gate insulator. The normalized noise power spectral density depended on channel length, L, with the form 1/L2, and on the gate bias voltage, VG, and threshold voltage, VTH, with the form 1/(VG - VTH)β where 1.5 < β < 2.1. In addition, the scattering constant α was less than 105 Ω. These results suggest that the contact resistance has a significant role in the LFN behavior and the charge-carrier density fluctuation is the dominant origin of LFN.

  9. Back-channel-etch amorphous indium-gallium-zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation

    Science.gov (United States)

    Nag, Manoj; Bhoolokam, Ajay; Steudel, Soeren; Chasin, Adrian; Myny, Kris; Maas, Joris; Groeseneken, Guido; Heremans, Paul

    2014-11-01

    We report on the impact of source/drain (S/D) metal (molybdenum) etch and the final passivation (SiO2) layer on the bias-stress stability of back-channel-etch (BCE) configuration based amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). It is observed that the BCE configurations TFTs suffer poor bias-stability in comparison to etch-stop-layer (ESL) TFTs. By analysis with transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS), as well as by a comparative analysis of contacts formed by other metals, we infer that this poor bias-stability for BCE transistors having Mo S/D contacts is associated with contamination of the back channel interface, which occurs by Mo-containing deposits on the back channel during the final plasma process of the physical vapor deposited SiO2 passivation.

  10. Study on interface characteristics in amorphous indium-gallium-zinc oxide thin-film transistors by using low-frequency noise and temperature dependent mobility measurements

    Science.gov (United States)

    Wu, Chenfei; Huang, Xiaoming; Lu, Hai; Yu, Guang; Ren, Fangfang; Chen, Dunjun; Zhang, Rong; Zheng, Youdou

    2015-07-01

    In this work, the interface properties of amorphous indium-gallium-zinc oxide thin film transistors annealed at different temperatures ranging from 150 to 250 °C are studied by temperature dependent mobility and low-frequency noise (LFN) characterizations. The dominant scattering mechanism for carrier transport is found to be Coulomb scattering based on gate bias and temperature dependent mobility measurement. Meanwhile, as the annealing temperature increases, the dominant mechanism of LFN within the device channel varies from carrier number fluctuation to carrier mobility fluctuation. The border trap density as well as the distribution properties of charged border traps is deduced. The present results suggest that annealing at higher temperature has a more remarkable effect on removing deeper border traps than traps closer to the channel/dielectric interface.

  11. Hydrogen Production from Water by Photolysis, Sonolysis and Sonophotolysis with Solid Solutions of Rare Earth, Gallium and Indium Oxides as Heterogeneous Catalysts

    Directory of Open Access Journals (Sweden)

    Marta Penconi

    2015-07-01

    Full Text Available In this work, we present the hydrogen production by photolysis, sonolysis and sonophotolysis of water in the presence of newly synthesized solid solutions of rare earth, gallium and indium oxides playing as catalysts. From the experiments of photolysis, we found that the best photocatalyst is the solid solution Y0.8Ga0.2InO3 doped by sulphur atoms. In experiments of sonolysis, we optimized the rate of hydrogen production by changing the amount of water, adding ethanol and tuning the power of our piezoelectric transducer. Finally, we performed sonolysis and sonophotolysis experiments in the presence of S:Y0.8Ga0.2InO3 finding a promising synergistic effect of UV-visible electromagnetic waves and 38 kHz ultrasound waves in producing H2.

  12. A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-08-03

    We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-current density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.

  13. Solvent extraction of indium with aliquat 336S from malonate solution

    Energy Technology Data Exchange (ETDEWEB)

    Raghunatha Rao, R.; Khopkar, S.M. (Indian Inst. of Tech., Bombay. Dept. of Chemistry)

    1982-05-01

    Indium is quantitatively extracted with 4% Aliquat 336S in xylene from 0.01 M malonic acid buffered solution of pH 4.0-5.0. It is stripped with 0.5 M hydrochloric acid and determined spectrophotometrically with 4-(2-pyridylazo) resorcinol at 520 nm. It is possible to separate indium from alkali and alkaline earths, thallium(I), iron(II), silver, arsenic, yttrium, tin and lanthanons by selective sorption whereas cadmium, nickel, copper, cobalt, chromium(III), aluminium and manganese(II) form weak malonato complexes along with indium and hence are stripped before indium. The separation from bismuth, thallium(III), antimony, mercury(II), platinum(IV) and gold is carried out from 1 M hydrochloric acid, while gallium, titanium, scandium, vanadium and zirconium are separated in 4 M nitric acid. The separation of several anions is also reported.

  14. C(sp₃)-H bond activation with triel metals: indium and gallium zwitterions through internal hydride abstraction in rigid salan ligands.

    Science.gov (United States)

    Maudoux, Nicolas; Fang, Jian; Roisnel, Thierry; Dorcet, Vincent; Maron, Laurent; Carpentier, Jean-François; Sarazin, Yann

    2014-06-16

    The hydropyrimidine salan (salan=N,N'-dimethyl-N,N'-bis[(2-hydroxyphenyl)methylene]-1,2-diaminoethane) proteo-ligands with a rigid backbone {ON^(CH2)^NO}H2 react with M(CH2SiMe3)3 (M=Ga, In) to yield the zwitterions {ON^(CH(+))^NO}M(-)(CH2SiMe3)2 (M=Ga, 2; In, 3) by abstraction of a hydride from the ligand backbone followed by elimination of dihydrogen. By contrast, with Al2Me6, the neutral-at-metal bimetallic complex [{ON^(CH2)^NO}AlMe]2 ([1]2) is obtained quantitatively. The formation of indium zwitterions is also observed with sterically more encumbered ligands containing o-Me substituents on the phenolic rings, or an N (CHPh) N moiety in the heterocyclic core. Overall, the ease of C(sp3)-H bond activation follows the order Al≪Gametal-hydride species. DFT calculations indicate that the systems {ON^(CH2)^NO}H2+M(CH2SiMe3)3 (M=Al, Ga, In) all initially lead to the formation of the neutral monophenolate dihydrocarbyl species through a single protonolysis. From here, the thermodynamic product, the model neutral-at-metal complex 1, is formed in the case of aluminum after a second protonolysis. On the other hand, lower activation energy pathways lead to the generation of zwitterionic complexes 2 and 3 in the cases of gallium and indium, and the formation of these zwitterions obeys a strict kinetic control; the computations suggest that, as inferred from the experimental data, the reaction proceeds through an instable metal-hydride species, which could not be isolated synthetically.

  15. Indium and gallium diffusion through zirconia in the TiN/ZrO{sub 2}/InGaAs stack

    Energy Technology Data Exchange (ETDEWEB)

    Ceballos-Sanchez, O. [CINVESTAV-Unidad Queretaro, Queretaro, Qro. 76230 (Mexico); Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Martinez, E.; Guedj, C.; Veillerot, M. [Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Herrera-Gomez, A. [CINVESTAV-Unidad Queretaro, Queretaro, Qro. 76230 (Mexico)

    2015-06-01

    Angle-resolved X-ray Photoelectron Spectroscopy (ARXPS) was applied to the TiN/ZrO{sub 2}/InGaAs stack to assess its thermal stability. Through a robust ARXPS analysis, it was possible to observe subtle effects such as the thermally induced diffusion of substrate atomic species (In and Ga) through the dielectric layer. The detailed characterization of the film structure allowed for assessing the depth profiles of the diffused atomic species by means of the scenarios-method. Since the quantification for the amount of diffused material was done at different temperatures, it was possible to obtain an approximate value of the activation energy for the diffusion of indium through zirconia. The result is very similar to the previously reported values for indium diffusion through alumina and through hafnia.

  16. Application of Copper Indium Gallium Diselenide Photovoltaic Cells to Extend the Endurance and Capabilities of Unmanned Aerial Vehicles

    Science.gov (United States)

    2009-09-01

    gallium diselenide (CIGS, Cu(In1-xGax)Se2), cadmium telluride ( CdTe ), and amorphous silicon (a- Si). There are other thin - film technologies that... CdTe (10.8), and a-Si (8.5) [70]. Table 3. Maximum Recorded Efficiencies for Thin - Film Solar Cells (From [71]). As shown in Figure 51, the... thin - film cells, and compared each of three TFSC to each other: a-Si, CdTe , and CIGS. After further review of some of the advantages and

  17. Properties of c-axis-aligned crystalline indium-gallium-zinc oxide field-effect transistors fabricated through a tapered-trench gate process

    Science.gov (United States)

    Asami, Yoshinobu; Kurata, Motomu; Okazaki, Yutaka; Higa, Eiji; Matsubayashi, Daisuke; Okamoto, Satoru; Sasagawa, Shinya; Moriwaka, Tomoaki; Kakehata, Tetsuya; Yakubo, Yuto; Kato, Kiyoshi; Hamada, Takashi; Sakakura, Masayuki; Hayakawa, Masahiko; Yamazaki, Shunpei

    2016-04-01

    To achieve both low power consumption and high-speed operation, we fabricated c-axis-aligned crystalline indium-gallium-zinc oxide (CAAC-IGZO) field-effect transistors (FETs) with In-rich IGZO and common IGZO (\\text{In}:\\text{Ga}:\\text{Zn} = 1:1:1 in atomic ratio) active layers through a simple process using trench gates, and evaluated their characteristics. The results confirm that 60-nm-node IGZO FETs fabricated through a 450 °C process show an extremely low off-state current below the detection limit (at most 2 × 10-16 A) even at a measurement temperature of 150 °C. The results also reveal that the FETs with the In-rich IGZO active layer show a higher on-state current than those with the common IGZO active layer and have excellent frequency characteristics with a cutoff frequency and a maximum oscillation frequency of up to 20 and 6 GHz, respectively. Thus, we demonstrated that CAAC-IGZO FETs with trench gates are promising for achieving both low power consumption and high-speed operation.

  18. Improvement in reliability of amorphous indium-gallium-zinc oxide thin-film transistors with Teflon/SiO2 bilayer passivation under gate bias stress

    Science.gov (United States)

    Fan, Ching-Lin; Tseng, Fan-Ping; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der; Huang, Bohr-Ran

    2016-02-01

    The reliability of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with Teflon/SiO2 bilayer passivation prepared under positive and negative gate bias stresses (PGBS and NGBS, respectively) was investigated. Heavier electrical degradation was observed under PGBS than under NGBS, indicating that the environmental effects under PGBS are more evident than those under NGBS. The device with bilayer passivation under PGBS shows two-step degradation. The positive threshold voltage shifts during the initial stressing period (before 500 s), owing to the charges trapped in the gate insulator or at the gate insulator/a-IGZO active layer interface. The negative threshold voltage shift accompanies the increase in subthreshold swing (SS) for the continuous stressing period (after 500 s) owing to H2O molecules from ambience diffused within the a-IGZO TFTs. It is believed that Teflon/SiO2 bilayer passivation can effectively improve the reliability of the a-IGZO TFTs without passivation even though the devices are stressed under gate bias.

  19. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C.

    Science.gov (United States)

    Kim, Won-Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-03-14

    We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm(2)/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites.

  20. Indium-chlorine and gallium-chlorine tetrasubstituted phthalocyanines in a bulk system, Langmuir monolayers and Langmuir-Blodgett nanolayers--spectroscopic investigations.

    Science.gov (United States)

    Bursa, B; Wróbel, D; Biadasz, A; Kędzierski, K; Lewandowska, K; Graja, A; Szybowicz, M; Durmuş, M

    2014-07-15

    The paper deals with spectroscopic characterization of metallic phthalocyanines (Pc's) (indium and gallium) complexed with chlorine and substituted with four benzyloxyphenoxy peripheral groups in bulk systems, 2D Langmuir monolayers and Langmuir-Blodgett nanolayers. An influence of the molecular structure of dyes (the presence of metal and of substitutes attached to the phthalocyanine macroring) on the in situ measurements of light absorption is reported. Molecular arrangement of the phthalocyanine molecular skeleton in the Langmuir monolayers on water substrate and in the Langmuir-Blodgett nanolayers is evaluated. A comparison of the light absorption spectra of the phthalocyanine monolayers with the spectra of the dyes in solution supports the existence of dye aggregates in the monolayer. It was shown that the type of dye aggregates (oblique and H types) depends markedly on the dye molecular structures. The NIR-IR, IR reflection-absorption and Raman spectra are also monitored for Langmuir-Blodgett nanolayers in non-polarized and polarized light. It was shown that the dye molecules in the Langmuir-Blodgett layers are oriented nearly vertically with respect to a gold substrate.

  1. Analysis of radiation-damaged and annealed gallium arsenide and indium phosphide solar cells using deep-level transient spectroscopy techniques. Master's thesis

    Energy Technology Data Exchange (ETDEWEB)

    Pinzon, D.

    1991-03-01

    Degradation of solar cell performance from radiation damage was found to be reversed through annealing processes. The mechanisms behind the degradation and recovery is based on deep-level traps, or defects, in the lattice structure of the solar cell. Through a process known as Deep Level Transient Spectroscopy (DLTS), a correlation can be made between damage/recovery and trap energy level/concentration of the cell. Gallium Arsenide (GaAs) and Indium Phosphide (InP) solar cells were subjected to 1 MeV electron irradiation by a Dynamitron linear acceleration at two fluence levels of 1E1r and 1E15 electrons/cm sq. The process of annealing included thermal annealing at 90 c with forward bias current and thermal annealing alone for (GaAs). After each cycle, DLTS measurements were taken to determine the energy level of the traps and their concentration. Multiple cycles of irradiation, annealing and DLTS were performed to observe the correlation between degradation and recovery to trap energy level and concentration. The results show that the lower energy level traps are associated with the recovery of the cells while the higher level traps are associated with the overall permanent degradation of the cells.

  2. Fabrication of conducting-filament-embedded indium tin oxide electrodes: application to lateral-type gallium nitride light-emitting diodes.

    Science.gov (United States)

    Kim, Hee-Dong; Kim, Kyeong Heon; Kim, Su Jin; Kim, Tae Geun

    2015-11-02

    A novel conducting filament (CF)-embedded indium tin oxide (ITO) film is fabricated using an electrical breakdown method. To assess the performance of this layer as an ohmic contact, it is applied to GaN (gallium nitride) light-emitting diodes (LEDs) as a p-type electrode for comparison with typical GaN LEDs using metallic ITO. The operating voltage and output power of the LED with the CF embedded ITO are 3.93 V and 8.49 mW, respectively, at an injection current of 100 mA. This is comparable to the operating voltage and output power of the conventionally fabricated LEDs using metallic ITO (3.93 V and 8.43 mW). Moreover, the CF-ITO LED displays uniform and bright light emission indicating excellent current injection and spreading. These results suggest that the proposed method of forming ohmic contacts is at least as effective as the conventional method.

  3. Effect of nitrogen doping on the structural, optical and electrical properties of indium tin oxide films prepared by magnetron sputtering for gallium nitride light emitting diodes

    Science.gov (United States)

    Tian, Lifei; Cheng, Guoan; Wang, Hougong; Wu, Yulong; Zheng, Ruiting; Ding, Peijun

    2017-01-01

    The indium tin oxide (ITO) films are prepared by the direct current magnetron sputtering technology with an ITO target in a mixture of argon and nitrogen gas at room temperature. The blue transmittance at 455 nm rises from 63% to 83% after nitrogen doping. The resistivity of the ITO film reduces from 4.6 × 10-3 (undoped film) to 5.7 × 10-4 Ω cm (N-doped film). The X-ray photoelectron spectroscopy data imply that the binding energy of the In3d5/2 peak is declined 0.05 eV after nitrogen doping. The high resolution transmission electron microscope images show that the nitrogen loss density of the GaN/ITO interface with N-doped ITO film is smaller than that of the GaN/ITO interface with undoped ITO film. The forward turn-on voltage of gallium nitride light emitting diode reduces by 0.5 V after nitrogen doping. The fabrication of the N-doped ITO film is conducive to modify the N component of the interface between GaN and ITO layer.

  4. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C

    Science.gov (United States)

    Kim, Won-Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-03-01

    We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm2/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites.

  5. Characterizations of chemical bath-deposited zinc oxysulfide films and the effects of their annealing on copper-indium-gallium-selenide solar cell efficiency

    Science.gov (United States)

    Hsieh, Tsung-Min; Lue, Shingjiang Jessie; Ao, Jianping; Sun, Yun; Feng, Wu-Shiung; Chang, Liann-Be

    2014-01-01

    Zinc oxysulfide (Zn(S,O)) thin films are fabricated using a chemical bath deposition method onto glass substrates and the surface of copper-indium-gallium-selenide (CIGS) adsorption layers for solar cell fabrication. The light and electric properties of the Zn(S,O) layers are improved after rapid thermal annealing (RTA). The Zn(S,O) properties of samples annealed under various atmospheres are compared. The resulting annealed Zn(S,O) films are 80-100 nm thick. The band gap decreases from 3.8 eV to 3.3 eV and the light transmittance is improved by more than 95% after annealing under oxygen atmosphere. The oxygen-annealed sample has a S/(S + O) ratio of 0.28 and a S/Zn ratio of 0.72. The CIGS solar cell that consists of the annealed Zn(S,O) buffer layer is more efficient (6.15%) than that of the non-annealed Zn(S,O) (4.56%). The solar cell performance is correlated with the deposited Zn(S,O) characteristics. The significantly higher carrier concentration, increases light transmittance, and improves crystalline structure of the oxygen-annealed Zn(S,O) film contributes to the improved cell performance.

  6. Synergistic effect of Indium and Gallium co-doping on growth behavior and physical properties of hydrothermally grown ZnO nanorods

    Science.gov (United States)

    Lim, Jun Hyung; Lee, Seung Muk; Kim, Hyun-Suk; Kim, Hyun You; Park, Jozeph; Jung, Seung-Boo; Park, Geun Chul; Kim, Jungho; Joo, Jinho

    2017-01-01

    We synthesized ZnO nanorods (NRs) using simple hydrothermal method, with the simultaneous incorporation of gallium (Ga) and indium (In), in addition, investigated the co-doping effect on the morphology, microstructure, electronic structure, and electrical/optical properties. The growth behavior of the doped NRs was affected by the nuclei density and polarity of the (001) plane. The c-axis parameter of the co-doped NRs was similar to that of undoped NRs due to the compensated lattice distortion caused by the presence of dopants that are both larger (In3+) and smaller (Ga3+) than the host Zn2+ cations. Red shifts in the ultraviolet emission peaks were observed in all doped NRs, owing to the combined effects of NR size, band gap renormalization, and the presence of stacking faults created by the dopant-induced lattice distortions. In addition, the NR/p-GaN diodes using co-doped NRs exhibited superior electrical conductivity compared to the other specimens due to the increase in the charge carrier density of NRs and the relatively large effective contact area of (001) planes. The simultaneous doping of In and Ga is therefore anticipated to provide a broader range of optical, physical, and electrical properties of ZnO NRs for a variety of opto-electronic applications. PMID:28155879

  7. Impact of severe cracked germanium (111 substrate on aluminum indium gallium phosphate light-emitting-diode’s electro-optical performance

    Directory of Open Access Journals (Sweden)

    Annaniah Luruthudass

    2016-01-01

    Full Text Available Cracked die is a serious failure mode in the Light Emitting Diode (LED industry – affecting LED quality and long-term reliability performance. In this paper an investigation has been carried out to find the correlation between severe cracked germanium (Ge substrate of an aluminum indium gallium phosphate (AlInGaP LED and its electro-optical performance after the Temperature Cycle (TC test. The LED dice were indented at several bond forces using a die bonder. The indented dice were analysed using a Scanning Electron Microscope (SEM. The result showed that severe cracks were observed at 180 gF onward. As the force of indentation increases, crack formation also becomes more severe thus resulting in the chipping of the substrate. The cracked dies were packaged and the TC test was performed. The results did not show any electro-optical failure or degradation, even after a 1000 cycle TC test. Several mechanically cross-sectioned cracked die LEDs, were analysed using SEM and found that no crack reached the active layer. This shows that severely cracked Ge substrate are able to withstand a −40°C/+100°C TC test up to 1000 cycles and LED optical performance is not affected. A small leakage current was observed in all of the cracked die LEDs in comparison to the reference unit. However, this value is smaller than the product specification and is of no concern.

  8. Indium gallium zinc oxide layer used to decrease optical reflection loss at intermediate adhesive region for fabricating mechanical stacked multijunction solar cells

    Science.gov (United States)

    Sameshima, Toshiyuki; Nimura, Takeshi; Sugawara, Takashi; Ogawa, Yoshihiro; Yoshidomi, Shinya; Kimura, Shunsuke; Hasumi, Masahiko

    2017-01-01

    Reduction of optical reflection loss is discussed in three mechanical stacked samples: top crystalline silicon and bottom crystalline germanium substrates, top crystalline GaAs and bottom crystalline silicon substrates, and top crystalline GaP and bottom crystalline silicon substrates using an epoxy-type adhesive with a reflective index of 1.47. Transparent conductive Indium gallium zinc oxide (IGZO) layers with a refractive index of 1.85 were used as antireflection layers. IGZO layers were formed on the bottom surface of the top substrate and the top surface of the bottom substrate of the three stacked samples with thicknesses of 188, 130, and 102 nm. The insertion of IGZO layers decreased the optical reflectivity of the stacked samples. The IGZO layers provided high effective optical absorbency of bottom substrates of 0.925, 0.943, and 0.931, respectively, for light wavelength regions for light in which the top substrates were transparent and the bottom substrates were opaque.

  9. Acoustic and NMR investigations of melting and crystallization of indium-gallium alloys in pores of synthetic opal matrices

    Science.gov (United States)

    Pirozerskii, A. L.; Charnaya, E. V.; Lee, M. K.; Chang, L. J.; Nedbai, A. I.; Kumzerov, Yu. A.; Fokin, A. V.; Samoilovich, M. I.; Lebedeva, E. L.; Bugaev, A. S.

    2016-05-01

    The paper presents the results of studying the crystallization and melting processes of Ga-In eutectic alloys, which are embedded in opal matrices, using acoustic and NMR methods. The indium concentrations in the alloys were 4, 6, 9, and 15 at %. Measurements were performed upon cooling from room temperature to complete crystallization of the alloys and subsequent heating. It is revealed how the size effects and alloy composition influence the formation of phases with α- and β-Ga structures and on changes in the melting-temperature ranges. A difference was observed between the results obtained using acoustic and NMR methods, which was attributed to different temperature measurement conditions.

  10. Magnetic properties of Kramers rare earth ions in aluminium and gallium garnets; Proprietes magnetiques des ions de kramers des terres rares dans les grenats de terres rares et d'aluminium et les grenats de terres rares et de gallium

    Energy Technology Data Exchange (ETDEWEB)

    Capel, H. [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1964-07-01

    The magnetic properties of Kramers rare earth ions in aluminium and gallium garnets (MAlG and MGaG) are discussed by means of a molecular field treatment. The symmetry properties of the space group permit to establish a parametrization for the magnetic dipolar and exchange couplings. The magnetic properties of the system can be expressed in terms of these parameters and the g factors of the rare earth ions. We have calculated the transition temperatures, the sub-lattice magnetizations, the susceptibility in the paramagnetic region and the antiferromagnetic susceptibility for a special type of magnetic ordering. The influence of the excited Kramers doublets is described by means of a generalization of the usual g tensor. (authors) [French] Les proprietes magnetiques des ions de Kramers des terres rares dans les grenats de terre rare et d'aluminium et les grenats de terre rare et de gallium sont discutees a l'aide d'un traitement du champ moleculaire. Les proprietes de symmetrie du groupe d'espace permettent d'exprimer les couplages dipolaires et les interactions d'echange en fonction de quelques parametres. Les proprietes magnetiques peuvent etre exprimees en fonction de ces parametres et les facteurs g des ions de terre rare. Nous avons calcule les temperatures de transition, les aimantations des sous-reseaux pour 0

  11. Influence of addition of indium and of post-annealing on structural, electrical and optical properties of gallium-doped zinc oxide thin films deposited by direct-current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Pham, Duy Phong [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Nguyen, Huu Truong [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Phan, Bach Thang [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Faculty of Materials Science, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Hoang, Van Dung [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Maenosono, Shinya [School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Tran, Cao Vinh, E-mail: tcvinh@hcmus.edu.vn [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam)

    2015-05-29

    In this study, both gallium-doped zinc oxide (GZO) and indium-added gallium-doped zinc oxide (IGZO) thin films were deposited on commercial glasses by magnetron dc-sputtering in argon atmosphere. The crystal structure, electrical conductivity and optical transmission of as-deposited as well as post-annealed thin films of both GZO and IGZO were investigated for comparison. A small amount of indium introduced into GZO thin films had improved their polycrystalline structure and increased their electrical conductivity by over 29%. All obtained GZO and IGZO thin films have strong [002] crystalline direction, a characteristic orientation of ZnO thin films. Although post-annealed in air at high temperatures up to 500 °C, IGZO thin films still had very low sheet resistance of 6.6 Ω/□. Furthermore, they had very high optical transmission of over 80% in both visible and near-infrared regions. - Highlights: • Doping 0.1 at.% indium enhanced crystalline, electrical properties of GZO films. • The mobility of IGZO films was 25% higher than that of GZO films. • The IGZO films will be potential materials for transparent conducting electrodes.

  12. Low temperature synthesis of radio frequency magnetron sputtered gallium and aluminium co-doped zinc oxide thin films for transparent electrode fabrication

    Science.gov (United States)

    Muchuweni, E.; Sathiaraj, T. S.; Nyakotyo, H.

    2016-12-01

    Gallium and aluminium co-doped zinc oxide (GAZO) thin films were prepared on glass substrates at low temperatures by radio frequency (rf) magnetron sputtering and their physical properties were investigated. All films possessed a hexagonal wurtzite crystal structure with a strong growth orientation along the (0 0 2) c-axis. The (0 0 2) peak intensity and mean crystallite size increased with substrate temperature from room temperature (RT) to 75 °C and then decreased at 100 °C, indicating an improvement in crystallinity up to 75 °C and its deterioration at 100 °C. Scanning electron microscopy (SEM) micrographs revealed the strong dependency of surface morphology on substrate temperature and energy dispersive spectroscopy (EDS) confirmed the incorporation of Ga and Al into the ZnO films. All films exhibited excellent transmittances between 85 and 90% in the visible region and their optical band gap increased from 3.22 eV to 3.28 eV with substrate temperature. The Urbach energy decreased from 194 meV to 168 meV with increasing substrate temperature, indicating a decrease in structural disorders which was consistent with X-ray Diffraction (XRD) analysis. Films deposited at 75 °C exhibited the lowest electrical resistivity (2.4 Ωcm) and highest figure of merit (7.5 × 10-5 Ω-1), proving their potential as candidates for transparent electrode fabrication.

  13. Evaluation of the indium gallium nitride/silicon broken-gap heterojunction and its potential application for solar cells

    Science.gov (United States)

    Yao, Yuan

    InGaN (especially In-rich alloy) has been actively studied for decades since the band gap of InN was revised downward from ˜2.0 eV to 0.64 eV. The potential applications for alloys of In-rich InGaN hence became apparent. Despite the promising potential, photovoltaic devices based on InGaN have struggled due to a number of key limitations and fundamental physical problems. Firstly, due to the deep excursion of the InN conduction band at the gamma point, defects in InN are almost universally n-type leading to unintentional degenerate doping. This also leads to the problem of electron accumulation at all surfaces and interfaces of InN. Secondly, p-type doping is problematic, partially due to the degenerate doping effect of defects, but it has also been observed that Mg-doping, while leading to a p-type layer, dramatically reduces the quantum efficiency. This thesis explores an alternative approach using n-type InGaN to form a heterojunction with a p-type Si substrate. One potential benefit to using p-type Si as a substrate material for InGaN is that the valence band of Si possibly lines up with the conduction band of InGaN for a specific mole fraction of indium. Such a band alignment is known as a broken gap heterojunction, an example of which is the interface between InAs and AlxGa 1--xSb. The benefits of this broken-gap junction include a low series resistance, high electron mobility, and mobility only weakly dependent on temperature. These properties enable new approach to photovoltaic devices. The InGaN/Si heterojunctions were fabricated by plasma-assisted molecular beam epitaxy under stoichiometric flux conditions. An ultra-thin SiN interface layer was introduced, by Si nitridation process, to passivate the substrate surface and prevent In-Si and Ga-Si eutectic problems. InGaN films with a variety of indium mole fractions were grown by calibrating the In/Ga flux ratio during the deposition. The chemical composition of as-grown films was characterized by x

  14. Effects of electron trapping and interface state generation on bias stress induced in indium-gallium-zinc oxide thin-film transistors

    Science.gov (United States)

    Han, Chang-Hoon; Kim, Sang-Sub; Kim, Kwang-Ryul; Baek, Do-Hyun; Kim, Sang-Soo; Choi, Byoung-Deog

    2014-08-01

    The electrical characteristics of bias temperature stress (BTS) induced in amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) were studied. We analyzed the threshold voltage (VTH) shift on the basis of the effects of positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS), and applied it to the stretched-exponential model. Both stress temperature and bias are considered as important factors in the electrical instabilities of a-IGZO TFTs, and the stretched-exponential equation is well fitted to the stress condition. VTH for the drain current-gate voltage (IDS-VGS) curve and flat-band voltage (VFB) for the capacitance-voltage (C-V) curve move in the positive direction when PBTS is induced. However, in the case of NBTS, they move slightly in the negative direction. To clarify the VTH shift phenomenon by electron and hole injection, the average effective energy barrier (Eτ) is extracted, and the extracted values of Eτ under PBTS and NBTS are about 1.33 and 2.25 eV, respectively. The oxide trap charges (Not) of PBTS and NBTS calculated by C-V measurement are 4.4 × 1011 and 1.49 × 1011 cm-2, respectively. On the other hand, the border trap charges of PBTS and NBTS are 6.7 × 108 and 1.7 × 109 cm-2, respectively. This indicates that the increased interface trap charge, after PBTS is induced, captures electrons during detrap processing from the border trap to the conduction band, valence band, and interface trap.

  15. Influence of source and drain contacts on the properties of indium-gallium-zinc-oxide thin-film transistors based on amorphous carbon nanofilm as barrier layer.

    Science.gov (United States)

    Luo, Dongxiang; Xu, Hua; Zhao, Mingjie; Li, Min; Xu, Miao; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

    2015-02-18

    Amorphous indium-gallium-zinc-oxide thin film transistors (α-IGZO TFTs) with damage-free back channel wet-etch (BCE) process were achieved by introducing a carbon nanofilm as a barrier layer. We investigate the effects of different source-and-drain (S/D) materials on TFT performance. We find the TFT with Ti/C S/D electrodes exhibits a superior performance with higher output current, lower threshold voltage, and higher effective electron mobility compared to that of Mo/C S/D electrodes. Transmittance electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) are employed to analysis the interfacial interaction between S/D metal/C/α-IGZO layers. The results indicate that the better performance of TFTs with Ti/C electrodes should be attributed to the formations of Ti-C and Ti-O at the Ti/C-contact regions, which lead to a lower contact resistance, whereas Mo film is relatively stable and does not react easily with C nanofilm, resulting in a nonohmic contact behavior between Mo/C and α-IGZO layer. However, both kinds of α-IGZO TFTs show good stability under thermal bias stress, indicating that the inserted C nanofilms could avoid the impact on the α-IGZO channel regions during S/D electrodes formation. Finally, we successfully fabricated a high-definition active-matrix organic lighting emitting diode prototype driven by α-IGZO TFTs with Ti/C electrodes in a pilot line.

  16. A chronic toxicity test for the tropical marine snail Nassarius dorsatus to assess the toxicity of copper, aluminium, gallium, and molybdenum.

    Science.gov (United States)

    Trenfield, Melanie A; van Dam, Joost W; Harford, Andrew J; Parry, David; Streten, Claire; Gibb, Karen; van Dam, Rick A

    2016-07-01

    Chronic toxicity test methods for assessing the toxicity of contaminants to tropical marine organisms are generally lacking. A 96-h chronic growth rate toxicity test was developed for the larval stage of the tropical dogwhelk, Nassarius dorsatus. Growth rates of N. dorsatus larvae were assessed following exposures to copper (Cu), aluminium (Al), gallium (Ga), and molybdenum (Mo). Exposure to Cu at 28 °C validated the sensitivity of the test method, with 10% (EC10) and 50% (EC50) effect concentrations of 4.2 μg/L and 7.3 μg/L Cu, respectively. The EC10 and EC50 values for Al (toxicity of Cu and Al was also assessed at 24 °C and 31 °C, representing average year-round water temperatures for subtropical and tropical Australian coastal environments. At 24 °C, the growth rate of control larvae was reduced by 52% compared with the growth rate at 28 °C and there was an increase in sensitivity to Cu (EC50 = 4.7 μg/L) but a similar sensitivity to Al (EC50 = 180 μg/L). At 31 °C the control growth rate increased by 35% from that measured at 28 °C and there was reduced sensitivity to both Cu and Al (EC50s = 8.5 μg/L and 642 μg/L, respectively). There was minimal toxicity resulting from Ga (EC50 = 4560 μg/L) and Mo (no effect at ≤7000 μg/L Mo). Environ Toxicol Chem 2016;35:1788-1795. © 2015 SETAC.

  17. Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control.

    Science.gov (United States)

    Sarkar, Sujoy; Sampath, S

    2016-05-11

    A ternary, ionically conducting, deep eutectic solvent based on acetamide, urea and gallium nitrate is reported for the electrodeposition of gallium nitride/gallium indium nitride under ambient conditions; blue and white light emitting photoluminescent deposits are obtained under potential control.

  18. High-performance low-cost back-channel-etch amorphous gallium-indium-zinc oxide thin-film transistors by curing and passivation of the damaged back channel.

    Science.gov (United States)

    Park, Jae Chul; Ahn, Seung-Eon; Lee, Ho-Nyeon

    2013-12-11

    High-performance, low-cost amorphous gallium-indium-zinc oxide (a-GIZO) thin-film-transistor (TFT) technology is required for the next generation of active-matrix organic light-emitting diodes. A back-channel-etch structure is the most appropriate device structure for high-performance, low-cost a-GIZO TFT technology. However, channel damage due to source/drain etching and passivation-layer deposition has been a critical issue. To solve this problem, the present work focuses on overall back-channel processes, such as back-channel N2O plasma treatment, SiOx passivation deposition, and final thermal annealing. This work has revealed the dependence of a-GIZO TFT characteristics on the N2O plasma radio-frequency (RF) power and frequency, the SiH4 flow rate in the SiOx deposition process, and the final annealing temperature. On the basis of these results, a high-performance a-GIZO TFT with a field-effect mobility of 35.7 cm(2) V(-1) s(-1), a subthreshold swing of 185 mV dec(-1), a switching ratio exceeding 10(7), and a satisfactory reliability was successfully fabricated. The technology developed in this work can be realized using the existing facilities of active-matrix liquid-crystal display industries.

  19. Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

    Science.gov (United States)

    Kim, Eungtaek; Kim, Choong-Ki; Lee, Myung Keun; Bang, Tewook; Choi, Yang-Kyu; Park, Sang-Hee Ko; Choi, Kyung Cheol

    2016-05-01

    We investigated the positive-bias stress (PBS) instability of thin film transistors (TFTs) composed of different types of first-gate insulators, which serve as a protection layer of the active surface. Two different deposition methods, i.e., the thermal atomic layer deposition (THALD) and plasma-enhanced ALD (PEALD) of Al2O3, were applied for the deposition of the first GI. When THALD was used to deposit the GI, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs showed superior stability characteristics under PBS. For example, the threshold voltage shift (ΔVth) was 0 V even after a PBS time (tstress) of 3000 s under a gate voltage (VG) condition of 5 V (with an electrical field of 1.25 MV/cm). On the other hand, when the first GI was deposited by PEALD, the ΔVth value of a-IGZO TFTs was 0.82 V after undergoing an identical amount of PBS. In order to interpret the disparate ΔVth values resulting from PBS quantitatively, the average oxide charge trap density (NT) in the GI and its spatial distribution were investigated through low-frequency noise characterizations. A higher NT resulted during in the PEALD type GI than in the THALD case. Specifically, the PEALD process on a-IGZO layer surface led to an increasing trend of NT near the GI/a-IGZO interface compared to bulk GI owing to oxygen plasma damage on the a-IGZO surface.

  20. Separation of indium(Ⅲ),gallium(Ⅲ),and zinc(Ⅱ) with Levextrel resin containing di(2-ethylhexyl) phosphoric acid (CL-P204):Part Ⅱ.Mechanism and kinetics of adsorbing indium(Ⅲ)

    Institute of Scientific and Technical Information of China (English)

    LIU Junshen; ZHOU Baoxue; CAI Chunguang; CAI Jun; CAI Weimin

    2004-01-01

    The mechanism of adsorbing indium(Ⅲ) from sulfate solutions with CL-P204 Levextrel resin containing di(-2-ethylhexyl) phosphoric acid was examined by batch operation and infrared spectra. The results showed that the P204 adsorbed on the resin behaved in the similar way to solvent extraction except that it was as a monomer in resin adsorbing but in dimeric form in solvent extraction. Three factors including temperature, indium(Ⅲ) concentration of solution, and the size of resin particles which influence the In3+/H+ exchange on CL-P204 Levextrel resin were investigated by the modified limited batch technique in order to determine the kinetics of In3+/H+ exchange. It was found that the rate of ion exchange increased with the temperature and the concentration of solution increasing and with the size of the resin particles decreasing.According to the expression developed by Boyd et al., the controlling factor of In3+/H+ exchange on CL-P204 Levextrel resin was the diffusion through the resin particles. The effective diffusion coefficient, activation energy, and entropy of activation in the particle-diffusion were determined as 1.57 x l0-10 m2/s, 11.9 KJ/mol, -84.1 J/(mol. K), respectively.

  1. 非晶铟镓锌氧化物薄膜晶体管关键工艺研究%Key Process Research of Indium Gallium Zinc Oxide Thin Film Transistor with Etch Stop Layer

    Institute of Scientific and Technical Information of China (English)

    高锦成; 李正亮; 曹占锋; 姚琪; 关峰; 惠官宝

    2016-01-01

    为优化金属氧化物薄膜晶体管( IGZO-TFT)的特性,采用射频磁控溅射法沉积IGZO薄膜作为半导体活性层,制备出具有刻蚀阻挡层( Etch stop layer ,ESL)结构的IGZO TFT,在2.5 G试验线上研究了IGZO沉积过程中O2浓度、IGZO沉积后N2 O等离子体处理、ESL的制备温度和ESL沉积过程中N2 O/SiH4的比例等关键工艺条件对IGZO TFT的阈值电压( Vth )的影响。实验结果表明:IGZO沉积过程中O2浓度的增加、IGZO沉积后N2 O等离子体处理和ESL制备温度的降低会导致IGZO TFT的Vth正偏移。%In order to improve the performance of Indium Gallium Zinc Oxide Thin Film Transistor , IGZO-TFT with etch-stop layer was prepared in 2 .5 G experimental line .The effects of O 2 concentration during IGZO deposition , N2 O plasma treatment , the temperature of ESL deposition and the N 2 O/SiH4 ratio on the IGZO TFT Vth were systemically studied .The results show that the Vth would shift to positive position as the increasing of O 2 concentration , N2 O plasma treatment , and the decreasing of ESL deposition temperature .

  2. Improving the efficiency of copper indium gallium (Di-selenide (CIGS solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    Directory of Open Access Journals (Sweden)

    M. Burghoorn

    2014-12-01

    Full Text Available Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (Jsc and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-selenide (CIGS solar cells is also optically advantageous. Here, we experimentally demonstrate that the Jsc and efficiency of CIGS solar cells with an absorber layer thickness (dCIGS of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (nresist = 1.792 vs. nAZO = 1.913 at 633 nm to avoid large optical losses at the resist-AZO interface. On average, Jsc increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%. No trend towards a larger relative increase in Jsc with decreasing dCIGS was observed. Ergo, the increase in Jsc can be fully explained by the reduction in reflection, and we did not observe any increase in Jsc based on an increased photon path length.

  3. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Burghoorn, M.; Kniknie, B.; Deelen, J. van; Ee, R. van [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Xu, M. [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Delft University of Technology, Optics Group, Van der Waalsweg 8, 2628 CH, Delft (Netherlands); Vroon, Z. [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Zuyd Hogeschool, Nieuw Eyckholt 300, 6419 DJ, Heerlen (Netherlands); Belt, R. van de [Kriya Materials BV, Urmonderbaan 22, 6167 RD, Geleen (Netherlands); Buskens, P., E-mail: pascal.buskens@tno.nl, E-mail: buskens@dwi.rwth-aachen.de [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); DWI – Leibniz Institute for Interactive Materials, Forckenbeckstrasse 50, 52056, Aachen (Germany)

    2014-12-15

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (J{sub sc}) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the J{sub sc} and efficiency of CIGS solar cells with an absorber layer thickness (d{sub CIGS}) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (n{sub resist} = 1.792 vs. n{sub AZO} = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, J{sub sc} increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in J{sub sc} with decreasing d{sub CIGS} was observed. Ergo, the increase in J{sub sc} can be fully explained by the reduction in reflection, and we did not observe any increase in J{sub sc} based on an increased photon path length.

  4. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    Science.gov (United States)

    Burghoorn, M.; Kniknie, B.; van Deelen, J.; Xu, M.; Vroon, Z.; van Ee, R.; van de Belt, R.; Buskens, P.

    2014-12-01

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (Jsc) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the Jsc and efficiency of CIGS solar cells with an absorber layer thickness (dCIGS) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (nresist = 1.792 vs. nAZO = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, Jsc increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in Jsc with decreasing dCIGS was observed. Ergo, the increase in Jsc can be fully explained by the reduction in reflection, and we did not observe any increase in Jsc based on an increased photon path length.

  5. The Availability of Indium: The Present, Medium Term, and Long Term

    Energy Technology Data Exchange (ETDEWEB)

    Lokanc, Martin [Colorado School of Mines, Golden, CO (United States); Eggert, Roderick [Colorado School of Mines, Golden, CO (United States); Redlinger, Michael [Colorado School of Mines, Golden, CO (United States)

    2015-10-01

    Demand for indium is likely to increase if the growth in deployment of the copper-indium-gallium-selenide (CIGS) and III-V thin-film photovoltaic technologies accelerates. There are concerns about indium supply constraints since it is relatively rare element in the earth's crust and because it is produced exclusively as a byproduct.

  6. Effect of gallium,aluminium,and chromium on silica supported V-Mg-O catalysts during oxidative dehydrogenation of propane:Kinetic study

    Institute of Scientific and Technical Information of China (English)

    B.Ravi Kumar; Rajeev Kumar

    2008-01-01

    The oxidative dehydrogenation(ODH)of propane was conducted on gallium,aluminum.and chromium doped Si30VMgO catalysts.On doping,the concentrations of the phases responsible for the activity and selectivity increased in their concentrations.The reaction studies were conducted in a tubular steel reactor at temperatures of 753,783,813.and 843 K and atmospheric pressure.The total flow rates of the feed were chosen as 30,40,50,and 60 ml/min.The propane to oxygen ratios were chosen at 1:1,2:1,and 3:1,respectively.The effect of various dopants on the activity and selectivity of the catalysts was studied.Deactivation studies were conducted over all the catalysts.The kinetic data were analyzed in terms of power law models and Langmuir-Hinshelwood(LH)models.The kinetic data results were analyzed by comparing the effect of dopants.Statistical model discrimination was done for the proposed models.AIC and BIC criteria were used for discrimination of the models.

  7. 射频磁控溅射低温制备非晶铟镓锌氧薄膜晶体管%Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor at Low Temperature by RF Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    信恩龙; 李喜峰; 陈龙龙; 石继锋; 李春亚; 张建华

    2012-01-01

    The indium gallium zinc oxide (IGZO) thin films were fabricated by RF magnetron sputtering at room temperature in this paper. The crystal structure, surface morphology, and optical electrical of the IGZO films were investigated by X-ray diffraction ( XRD) , atom force microscopy (AFM) , and photometry, respectively. The results revealed that the IGZO film was amorphous, the surface of the films was uniform and smooth. A good optical transmittance of over 80% was obtained in the visible light. The IGZO thin film transistors were successfully fabricated at low temperature ( < 200℃ ) using the room temperature sputtering IGZO thin film as the active layer. The field effect mobility of a-IGZO TFT was larger than 6. 0 cm2 · V-1·s-1. The device's on/off ratio was 10~7, threshold voltage was 1.2 V and subthreshold voltage swing is 0.9 V/ dec. Constant bias stress testing showed that the a-IGZO TFT threshold voltage exhibited positive shifts as time increased.%利用射频磁控溅射技术室温制备了铟镓锌氧(IGZO)薄膜,采用X射线衍射(XRD)表征薄膜的晶体结构,原子力显微镜(AFM)观察其表面形貌,分光光度计测量其透光率.结果表明:室温制备的IGZO薄膜为非晶态且薄膜表面均匀平整,可见光透射率大于80%.将室温制备的IGZO薄膜作为有源层,在低温(<200℃)条件下成功地制备了铟镓锌氧薄膜晶体管(a-IGZO TFT),获得的a-IGZO-TFT器件的场效应迁移率大于6.0cm2·V-1·s-1,开关比约为107,阈值电压为1.2V,亚阈值摆蝠(S)约为0.9 V/dec,偏压应力测试a-IGZO TFT阈值电压随时间向右漂移.

  8. CIGS薄膜太阳能电池无镉缓冲层制备方法的研究现状%Deposition Technologies of Cd-Free Buffer Layers in Solar Cells Made of Copper Indium Gallium Diselenide Films

    Institute of Scientific and Technical Information of China (English)

    霍晓旭; 莫晓亮; 陈国荣

    2012-01-01

    The latest progress in the development of deposition technology of the Cd-free buffer layers in the solar cells made of copper indium gallium diselenide(CIGS) films was tentatively reviewed.The discussions focused on three topics: first, the film growth techniques and related properties of the three alternative Cd-free buffer layer materials (In2S3,ZnS,and Zn1-xMgxO) ; next,the possible impacts of the three alternative films and their deposition techniques on the fabrication and performance of the solar cells; finally, the development trends of the Cd-free layers in fabricating the CIGS solar cells.The strengths and weaknesses of the techniques, including the chemical bath deposition(CBD) , atomic layer deposition (AID) and sputtering depositions, on industrial scale production were evaluated in a thought-provoking way. We suggest that the sputtering deposition be most feasible to large scale industrial production. The technical problems to be solved were also discussed.%回顾了近年来CIGS薄膜太阳能电池无镉缓冲层的研究进展;着重介绍了In2S3,ZnS,Zn1-xMgxO三种可替代CdS缓冲层材料的常用制备方法及相关特性,并且对应给出了每种材料和方法获得的电池组件效率.展望了无镉缓冲层的发展前景,分析了化学水浴、原子层沉积、溅射三种缓冲层沉积技术各自在大规模工业化应用中的优劣势.认为溅射沉积技术是现阶段最理想的工业化制备技术,同时指出了无镉缓冲层在大规模工业化应用中亟需解决的问题.

  9. Unintentional gallium incorporation in InGaN layers during epitaxial growth

    Science.gov (United States)

    Zhou, Kun; Ren, Huaijin; Ikeda, Masao; Liu, Jianping; Ma, Yi; Gao, Songxin; Tang, Chun; Li, Deyao; Zhang, Liquan; Yang, Hui

    2017-01-01

    Unintentional gallium incorporation was observed and investigated in the epitaxial growth of InGaN by metalorganic vapor phase epitaxy. InGaN was grown without intentional gallium precursor and the gallium incorporation rate was found not dependent on TEGa source but was significantly influenced by temperature and TMIn source flow. The source of the unintentional gallium incorporation is confirmed to be from the flow distributor of the reactor. The incorporation mechanism was analyzed to be the diffusion of resultant of transmetalation reaction between TMIn or its decomposed products (for example DMIn) and residual gallium. Due to the unintentional gallium incorporation, the growth rate and indium content of InGaN layer are determined by indium source, gallium source and the growth temperature.

  10. 氧分压对铟镓锌氧薄膜晶体管性能影响%Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor

    Institute of Scientific and Technical Information of China (English)

    孙建明; 周婷婷; 任庆荣; 胡合合; 陈宁; 宁策; 王路; 刘文渠; 李东升

    2016-01-01

    采用标准的液晶显示屏基板制备工艺制备出铟镓锌氧薄膜晶体管(IGZO-TFT),通过调节 IGZO 薄膜工艺中氧分压,研究不同氧分压对TFT器件电学性能的影响.实验结果表明,所有器件都展现出良好的电学特性,随着氧分压从10%增加到50%,TFT的阈值电压由0.5 V增加到2.2 V,而亚阈值摆幅没有发生变化.在栅极施加30 V偏压3600 s后,随着氧分压的增加,阈值电压向正向的漂移量由1 V增加到9 V.经过分析得出高氧分压的 IGZO-TFT器件中载流子浓度低,建立相同导电能力的沟道时所需要栅极电压会更大,阈值电压会增加.而在金属-绝缘层-半导体(MIS)结构中低载流子浓度会导致有源层能带弯曲的部分包含更多与电子陷阱相同的能态,栅介质层(GI)会俘获更多的电子,造成阈值电压漂移量较大的现象.%Indium gallium zinc oxide thin film transistors (IGZO-TFT)were fabricated with the stand-ard process of TFT-LCD arrays substrate.The effects of different oxygen partial pressure on IGZO-TFT performance were investigated by adj usting the oxygen partial pressure in IGZO film process.All devices showed good electrical properties.The threshold voltage of TFT was increased from 0.5 V to 2.2 V as the oxygen partial pressure was increased from 10% to 50%,whereas the sub-threshold swing had not changed.Applying a positive gate bias of 30 V for 3 600 s,with the increase of the oxy-gen partial pressure,the positive shift of threshold voltage of IGZO-TFT was increased from 1 V to 9 V.The carrier concentration in TFT with higher oxygen partial pressure is lower.So it requires high-er gate voltage for building the channel with the same conductive capability,and therefore the thresh-old voltage will be higher.In the Metal-Insulator-Semiconductor (MIS)structure,the lower carrier concentration leads electron accumulation layer to be thicker.There will be more energy states in band bending part of active layer which

  11. Aluminium bridges, aluminium bridge decks

    NARCIS (Netherlands)

    Soetens, F.; Straalen, IJ.J. van

    2003-01-01

    Applications of aluminium have grown considerably in building and civil engineering the last decade. In building and civil engineering the increase of aluminium applications is due to various aspects like light weight, durability and maintenance, use of extrusions, and esthetics. The paper starts wi

  12. Synthesis and Characterization of Chiral Organogallium and Indium Complexes with Salen Ligands

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Several new chiral organogallium and indium complexes with chiral Salen (1 and 2) as anxciliary ligands have been synthesized and characterized by elemental analysis, IR, 1H NMR and Mass spectroscopy. For the gallium, mono and bimetallic complexes were obtained, whereas ring closure complexes of indium were obtained.

  13. [Mechanism of renal elimination of 2 elements of group IIIA of the periodic table : aluminum and indium].

    Science.gov (United States)

    Galle, P

    1981-01-05

    Aluminium and indium, two elements of group IIIA of the periodic table, are concentrated by the kidney inside lysosomes of proximal tubule cell. In these lysosomes, aluminium and indium are precipitated as non-soluble phosphate salts and these precipitates are then expelled in the tubular lumen and eliminated with the urinary flow. These data have been visualized by analytical microscopy (ion microscopy and X ray microanalysis). Local acid phosphatases are assumed to permit the concentration of aluminium and indium salts inside the lysosomes.

  14. 高迁移率非晶铟镓锌氧化物薄膜晶体管的制备与特性研究%The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistors∗

    Institute of Scientific and Technical Information of China (English)

    李帅帅; 梁朝旭; 王雪霞; 李延辉; 宋淑梅; 辛艳青; 杨田林†

    2013-01-01

      由于铟镓锌氧化物(IGZO)薄膜具有高迁移率和高透过率的特点,它作为有源层被广泛的应用于薄膜晶体管(TFT).本文利用磁控溅射方法制备了TFT的有源层IGZO和源漏电极,用简单低成本的掩膜法控制沟道的尺寸,制备了具有高迁移率、底栅结构的n型非晶铟镓锌氧化物薄膜晶体管(IGZO-TFT).利用X射线衍射仪(XRD)和紫外可见光分光光度计分别测试了IGZO薄膜的衍射图谱和透过率图谱,研究了IGZO薄膜的结构和光学特性.通过测试IGZO-TFT的输出特性和转移特性曲线,讨论了IGZO有源层厚度对IGZO-TFT特性的影响.制备的IGZO-TFT器件的场效应迁移率高达15.6 cm2·V−1·s−1,开关比高于107.%Indium gallium zinc oxide (IGZO) is widely used in thin-film transistors (TFT) as an active layer due to its high mobility and transmittance. The amorphous n-type indium gallium zinc oxide thin-film transistors (IGZO-TFT) of bottom gate with high mobility were prepared, the active layer, source and drain electrode of the TFT were prepared by using magnetron sputtering method, and a low cost mask was used to control the size of the channel. The diffraction pattern and transmittance spectrum were measured by using X-ray diffraction and ultraviolet–visible spectrophotometer, respectively. The structural and optical properties of the IGZO thin film were studied. The dependence of active layer thickness on the performance was analyzed by testing the output characteristics and transfer property of IGZO-TFT. The field effect mobility of the IGZO-TFT reaches 15.6 cm2·V−1·s−1, and the on/off ratio is higher than 107.

  15. Lung gallium scan

    Science.gov (United States)

    Gallium 67 lung scan; Lung scan; Gallium scan - lung; Scan - lung ... Gallium is injected into a vein. The scan will be taken 6 to 24 hours after the gallium is injected. (Test time depends on whether your condition is acute or chronic .) ...

  16. 铜-钼源漏电极对非晶氧化铟镓锌薄膜晶体管性能的改善∗%Improved p erformance of the amorphous indium-gallium-zinc oxide thin film transistor with Cu-Mo source/drain electro de

    Institute of Scientific and Technical Information of China (English)

    宁洪龙; 王磊; 兰林锋; 彭俊彪; 胡诗犇; 朱峰; 姚日晖; 徐苗; 邹建华; 陶洪; 徐瑞霞; 徐华

    2015-01-01

    Copper is an alternative material for aluminum electrode to meet the stringent requirement for high mobility and low resistance-capacitance (RC) delay of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) for next generation of display technology due to its intrinsic high conductivity. However, low bonding strength between copper layer and insulator/glass and easy diffusion into active layer restrict its application in the field of TFT. In this work, a 30 nm thin film of molybdenum is introduced into copper electrode to form a copper-molybdenum source/drain electrode of a-IGZO TFT, which not only inhibits the diffusion of copper, but also enhances the interfacial adhesion between electrode and substrate. The obtained Cu-Mo TFT possesses a high mobility of∼9.26 cm2·V−1·s−1 and a low subthreshold swing of 0.11 V/Decade. Moreover, it has shorter current transfer length(∼0.2 µm), lower contact resistance (∼1072 Ω), and effective contact resistance (∼1 × 10−4 Ω·cm2) than the pure copper electrode. Cu-Mo electrode with low contact resistance and high adhesion to substrates paves the way to the application of copper in high conductivity interconnection of a-IGZO TFT.

  17. Native point defects in indium nitride and indium-rich indium gallium nitride alloys

    Science.gov (United States)

    Li, Sonny Xiao-Zhe

    The recent discovery of the narrow bandgap of InN of 0.7 eV has attracted strong scientific interests on the fundamental properties and possible applications of InN and its ternary alloys. The first part of this thesis was inspired by the proposal of using InxGa1-x N alloy to build high efficiency solar cell for space applications. To test the irradiation hardness of InN and InxGa 1-xN, we have irradiated numerous samples with energetic particles (1-2 MeV electrons, protons, and 4He+ particles). InN and InxGa1-xN displayed superior radiation hardness over current multi-junction solar cell materials such as GaAs and GaInP in terms of electronic and optical properties. Free electron concentrations in InN and In-rich InxGa 1-xN increased with irradiation dose but saturated at a sufficiently high damage dose. According to the amphoteric defect model, the doping effect and the electron concentration saturation originates from irradiation-induced native donors and Fermi level pinning at the Fermi level stabilization energy (EFS). The EFS, an average energy of all localized native defects, dictates the electronic properties (donor or acceptor) of the native point defects. The electron concentration saturation and Fermi level pinning lead to profound changes in the optical properties. Absorption spectra shift to higher energy due to the conduction band-filling effect (Burstein-Moss shift). Photoluminescence (PL) signals broadened and shifted to higher energy as the k-conservation rule collapsed with irradiation damage. The PL intensity of increased slightly with higher carrier concentration before it became quenched by the irradiation-induced carrier traps. Capacitance-voltage (CV) measurements show that the pinning of the surface Fermi energy at EFS is also responsible for the surface electron accumulation effect in InN and In-rich In xGa1-xN alloys. The second part of this thesis focuses on the hydrostatic pressure dependence of group III-nitride alloys. The hydrostatic pressure dependence of the narrow bandgap of InN, In-rich InxGa1-x N (0 < x ≤ 0.5), and InyAl 1-yN (y = 0.25) alloys was measured by optical absorption and PL experiments with samples mounted in diamond anvil cells. The pressure coefficient of InN was experimentally determined for the first time to be 3.0+/-0.1 meV/kbar. The PL signal exhibits a much weaker pressure dependence than the direct bandgap, which is attributed to the emission process associated with highly localized states. Using the localized states emission as an energy reference, the deformation potential of the band edges of InN and In0.5Ga0.5N were determined.

  18. Aluminium in human sweat.

    Science.gov (United States)

    Minshall, Clare; Nadal, Jodie; Exley, Christopher

    2014-01-01

    It is of burgeoning importance that the human body burden of aluminium is understood and is measured. There are surprisingly few data to describe human excretion of systemic aluminium and almost no reliable data which relate to aluminium in sweat. We have measured the aluminium content of sweat in 20 healthy volunteers following mild exercise. The concentration of aluminium ranged from 329 to 5329μg/L. These data equate to a daily excretion of between 234 and 7192μg aluminium and they strongly suggest that perspiration is the major route of excretion of systemic aluminium in humans.

  19. Gallium nitride optoelectronic devices

    Science.gov (United States)

    Chu, T. L.; Chu, S. S.

    1972-01-01

    The growth of bulk gallium nitride crystals was achieved by the ammonolysis of gallium monochloride. Gallium nitride single crystals up to 2.5 x 0.5 cm in size were produced. The crystals are suitable as substrates for the epitaxial growth of gallium nitride. The epitaxial growth of gallium nitride on sapphire substrates with main faces of (0001) and (1T02) orientations was achieved by the ammonolysis of gallium monochloride in a gas flow system. The grown layers had electron concentrations in the range of 1 to 3 x 10 to the 19th power/cu cm and Hall mobilities in the range of 50 to 100 sq cm/v/sec at room temperature.

  20. Investigations in gallium removal

    Energy Technology Data Exchange (ETDEWEB)

    Philip, C.V.; Pitt, W.W. [Texas A and M Univ., College Station, TX (United States); Beard, C.A. [Amarillo National Resource Center for Plutonium, TX (United States)

    1997-11-01

    Gallium present in weapons plutonium must be removed before it can be used for the production of mixed-oxide (MOX) nuclear reactor fuel. The main goal of the preliminary studies conducted at Texas A and M University was to assist in the development of a thermal process to remove gallium from a gallium oxide/plutonium oxide matrix. This effort is being conducted in close consultation with the Los Alamos National Laboratory (LANL) personnel involved in the development of this process for the US Department of Energy (DOE). Simple experiments were performed on gallium oxide, and cerium-oxide/gallium-oxide mixtures, heated to temperatures ranging from 700--900 C in a reducing environment, and a method for collecting the gallium vapors under these conditions was demonstrated.

  1. Human exposure to aluminium.

    Science.gov (United States)

    Exley, Christopher

    2013-10-01

    Human activities have circumvented the efficient geochemical cycling of aluminium within the lithosphere and therewith opened a door, which was previously only ajar, onto the biotic cycle to instigate and promote the accumulation of aluminium in biota and especially humans. Neither these relatively recent activities nor the entry of aluminium into the living cycle are showing any signs of abating and it is thus now imperative that we understand as fully as possible how humans are exposed to aluminium and the future consequences of a burgeoning exposure and body burden. The aluminium age is upon us and there is now an urgent need to understand how to live safely and effectively with aluminium.

  2. Recovery of galium and indium from liquid crystal displays and CIGS photovailtaic modules

    NARCIS (Netherlands)

    Bisselink, R.; Steeghs, W.; Brouwer, J.G.H.

    2014-01-01

    Abstract: The increasing amount of electronics, such as consumer products and green technologies (e.g. solar PV cells) increases the demand of metals such as indium and gallium. This increasing demand together with the dependency on import of these metals drive research on recycling of waste electro

  3. 原子层沉积氧化锌应用于铜铟镓硒太阳能电池缓冲层的研究%Study on Application of Atomic Layer Depositing Zinc Oxide for Buffer Layer to Copper Indium Gallium Selenium Solar Battery

    Institute of Scientific and Technical Information of China (English)

    廖荣; 张海燕; 谢佳亮; 杨铁铮; 罗文中; 胡伟

    2013-01-01

    A zinc oxide thin-film was deposited on soda lime glass with the method of atomic layer deposition (ALD),and field emission scanning electron microscope and X-ray diffractometer were employed to analyze the surface appearance and phase of the sample.The results show that the nanoparticle of ZnO is hexangular wurtzite structure and the size of particle is 30-60 nm.The measured thickness of ZnO thin-film is only 50 nm,which can meet the requirement of buffer layer.Transmittance of the thin-film in visible light area is more than 90%.Using atomic layer deposited zinc oxide thin-film as buffer layer of copper indium gallium selenium (CIGS) solar battery,it can be found that the zinc oxide layer covers the CIGS layer tightly,and that the photoelectric conversion efficiency of battery is high,so it can fully replace the toxic CdS as buffer layer.%用原子层沉积法在钠钙玻璃上沉积氧化锌薄膜,利用场发射扫描电镜和X射线衍射(XRD)等对样品表面形貌和物相进行分析,结果表明得到的ZnO纳米颗粒为六角纤锌矿结构,颗粒的尺寸在30~60 nm之间;测得的ZnO薄膜厚度仅50 nm,符合缓冲层要求;薄膜在可见光区域透射率达90%以上;使用原子层沉积氧化锌薄膜作铜铟镓硒太阳能电池的缓冲层,TEM显示氧化锌层完好、致密地覆盖在CIGS层上,电池的光电转换效率较高,完全可以替代有毒的CdS作缓冲层.

  4. NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference

    Energy Technology Data Exchange (ETDEWEB)

    Fitzgerald, M. [ed.

    1993-05-01

    Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

  5. Gallium Arsenide Photocathode Development

    Science.gov (United States)

    1975-10-01

    r ~\\ 1 1 AD-A018 619 ■ i I 1 GALLIUM ARSENIDE PHOTOCATHODE DEVELOPMENT I Terry Roach, et al 1 1 ■f EPSCO ...aiwiiwnHWlffl’Wip m, «swwerf^MW^S’ GALLIUM ARSENIDE PHOTOCATHODE DEVELOPMENT T. J. Roach Bianca Contractor: EPSCO Laboratories Contract Number: F08606...PHOTOCATHODE DEVELOPMENT 7. AUTHORfaJ T. Roach J. Bianca t. PERFORMING ORGANIZATION NAME AND AOORESS EPSCO Laboratories 227 High Ridge Road Stauford CT

  6. Sustainable Aluminium Systems

    Directory of Open Access Journals (Sweden)

    Sergio R. Ermolli

    2010-09-01

    Full Text Available In the present paper, an analytical presentation of some popular aluminium systems that contribute to sustainability of structures is presented. Special emphasis has been given to the properties of aluminium, while the influence of these systems in the overall performance of the structure regarding environment and economy is described. In particular, characteristics of aluminium elements such as high reflectivity and recyclability and their role in life cycle analysis (LCA are analyzed. The connections between energy efficiency and conservation of buildings and aluminium application are also discussed. Building applications such as curtain walls, window frames and facade sheets are presented and thoroughly investigated, considering their environmental and economic aspects. Furthermore, many innovative techniques that use aluminium elements in collaboration with other systems in order to produce renewable energy, such as solar panels and photovoltaics, are introduced. Finally, environmental innovations such as optimized ventilation mechanisms and light and shade management systems based on aluminium members are presented.

  7. Auger Recombination in Indium Gallium Nitride: Experimental Evidence

    Science.gov (United States)

    Krames, Michael

    2010-03-01

    Progress in InGaN-based light-emitting diode (LED) technology has resulted in white-light emitters with efficiencies far exceeding those of conventional light sources such as tungsten-filament-based incandescence and mercury-vapor based fluorescence. Indeed, by now efficacies exceeding 150 lumens per Watt for InGaN-based phosphor-converted white LEDs are claimed, which represent a 90% energy savings compared to the conventional incandescent (i.e., ``light bulb'') solution. However, these high performance levels are obtained under conditions of very low forward current-density for the InGaN LED and do not represent true operating conditions (nor cost-effective utilization) for the device. In order to reduce the cost (and thus increase market penetration of) solid-state lighting, more lumens per unit of semiconductor area are required which in practice necessitates higher drive current densities. Unfortunately, at these higher driver current densities, the internal quantum efficiency of InGaN-based LEDs is observed to decrease significantly. In the fall of 2007, researchers at the Advanced Laboratories of Philips Lumileds were the first to propose Auger recombination as the root-cause mechanism in InGaN which was behind this ``efficiency droop'' [1]. They further proposed to circumvent the problem by employing InGaN-based active region designs that maintain low carrier density, and demonstrated an LED device design that reaches a maximum quantum efficiency above 200 A/cm2, compared to ˜1-10 A/cm^2 for typical multiple-quantum-well heterostructures [2]. In this talk we will review the experimental evidence for Auger recombination in InGaN, beginning with the early work from 2007 and then considering additional work from more recent efforts to better understand the details behind this loss mechanism. [4pt] [1] Y. C. Shen, G. O. M"uller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, ``Auger recombination in InGaN measured by photoluminescence'', Appl. Phys. Lett. 91, 141101 (2007). [0pt] [2] N. F. Gardner, G. O. M"uller, Y. C. Shen, G. Chen, S. Watanabe, W. G"otz, and M. R. Krames, ``Blue-emitting InGaN--GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm^2'', Appl. Phys. Lett. 91, 243506 (2007).

  8. Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes.

    Science.gov (United States)

    Park, Ji-Yeon; Man Song, Keun; Min, Yo-Sep; Choi, Chel-Jong; Seok Kim, Yoon; Lee, Sung-Nam

    2015-11-16

    Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ~5-μm-long CNT/Si template, were estimated to be ~100-270 nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

  9. High-performance fused indium gallium arsenide/silicon photodiode

    Science.gov (United States)

    Kang, Yimin

    Modern long haul, high bit rate fiber-optic communication systems demand photodetectors with high sensitivity. Avalanche photodiodes (APDs) exhibit superior sensitivity performance than other types of photodetectors by virtual of its internal gain mechanism. This dissertation work further advances the APD performance by applying a novel materials integration technique. It is the first successful demonstration of wafer fused InGaAs/Si APDs with low dark current and low noise. APDs generally adopt separate absorption and multiplication (SAM) structure, which allows independent optimization of materials properties in two distinct regions. While the absorption material needs to have high absorption coefficient in the target wavelength range to achieve high quantum efficiency, it is desirable for the multiplication material to have large discrepancy between its electron and hole ionization coefficients to reduce noise. According to these criteria, InGaAs and Si are the ideal materials combination. Wafer fusion is the enabling technique that makes this theoretical ideal an experimental possibility. APDs fabricated on the fused InGaAs/Si wafer with mesa structure exhibit low dark current and low noise. Special device fabrication techniques and high quality wafer fusion reduce dark current to nano ampere level at unity gain, comparable to state-of-the-art commercial III/V APDs. The small excess noise is attributed to the large difference in ionization coefficients between electrons and holes in silicon. Detailed layer structure designs are developed specifically for fused InGaAs/Si APDs based on principles similar to those used in traditional InGaAs/InP APDs. An accurate yet straightforward technique for device structural parameters extraction is also proposed. The extracted results from the fabricated APDs agree with device design parameters. This agreement also confirms that the fusion interface has negligible effect on electric field distributions for devices fabricated from high quality fusion materials. The feasibility of fused InGaAs/Si APD for analog systems is also explored. Preliminary two-tone measurement shows that a moderately high dynamic range of 70 dBc/Hz1/2 for broadband Spur Free Dynamic Range (SFDR) or 82 dBc/Hz2/3 suboctave SFDR, up to 50 muA of optical current, can be achieved. The theoretical analyses of SNR show that fused InGaAs/Si APD receivers can provide larger Signal-to-Noise Ratio (SNR) than their III/V counterparts.

  10. The cathode luminescence of gallium monoselenide and indium monocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Bartish, L.A.; Fiiala, Y.M.; Kinakh, S.P.; Savchin, V.P.; Stakhira, I.M.

    1981-01-01

    Results are given from studies on the spectral and temperature regularities of the cathodluminescence of GaSe and InSe monocrystals in a temperature range of 85 to 300 k with an electron energy 10 kiloelectron volts. The results are interupted accounting for the features of the scattering of excitons at the phonons.

  11. Properties of sodium-intercalated indium and gallium selenides

    Energy Technology Data Exchange (ETDEWEB)

    Kovalyuk, Z.D.; Luk' yanyuk, V.K.

    1988-03-01

    The authors present the results of an investigation of some physicochemical properties of Na/sub x/InSe and Na/sub x/GaSe (chemical potential, diffusion of the intercalant) and they give an interpretation of the results based on the thermodynamic model of intercalants, constructed for dye chalcogenides of transition metals. Electrochemical and theoretical investigations indicate that first-stage structures form in the concentration ranges x = 0.15-1 for Na/sub x/GaSe. Calculations based on the use of the lattice-gas theory agree well with the experimental data and make it possible to determine the energy of interaction of intercalated ions in the van der Waals gap.

  12. Electrodeposition of indium

    Energy Technology Data Exchange (ETDEWEB)

    Fouda, A.S.; Ahmed, A.I.; Madkour, L.H.

    Metallic indium was deposited from aqueous solutions of indium trichloride containing also, acetate, thiocyanate, chloride, iodide, sulphate, oxalate, ethanol, acetamide and citrate of sodium or potassium. The optimum conditions are: pH 2-5, current density 2-25 mA cm/sup -2/, temperature 30/sup O/C and metal ion concentration O.2 mol l/sup -1/. Deposits have been obtained on a platinum sheet cathode. Chemical analysis reveals that the purity of the indium is better than 99%. The rate of deposition is also determined. 15 refs.

  13. Electrodeposition of gallium for photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, Raghu N.

    2016-08-09

    An electroplating solution and method for producing an electroplating solution containing a gallium salt, an ionic compound and a solvent that results in a gallium thin film that can be deposited on a substrate.

  14. Chemical mechanical polishing of Indium phosphide, Gallium arsenide and Indium gallium arsenide films and related environment and safety aspects

    Science.gov (United States)

    Matovu, John Bogere

    As scaling continues with advanced technology nodes in the microelectronic industry to enhance device performance, the performance limits of the conventional substrate materials such as silicon as a channel material in the front-end-of-the-line of the complementary metal oxide semiconductor (CMOS) need to be surmounted. These challenges have invigorated research into new materials such as III-V materials consisting of InP, GaAs, InGaAs for n-channel CMOS and Ge for p-channels CMOS to enhance device performance. These III-V materials have higher electron mobility that is required for the n-channel while Ge has high hole mobility that is required for the p-channel. Integration of these materials in future devices requires chemical mechanical polishing (CMP) to achieve a smooth and planar surface to enable further processing. The CMP process of these materials has been associated with environment, health and safety (EH&S) issues due to the presence of P and As that can lead to the formation of toxic gaseous hydrides. The safe handling of As contaminated consumables and post-CMP slurry waste is essential. In this work, the chemical mechanical polishing of InP, GaAs and InGaAs films and the associated environment, health and safety (EH&S) issues are discussed. InP removal rates (RRs) and phosphine generation during the CMP of blanket InP films in hydrogen peroxide-based silica particle dispersions in the presence and absence of three different multifunctional chelating carboxylic acids, namely oxalic acid, tartaric acid, and citric acid are reported. The presence of these acids in the polishing slurry resulted in good InP removal rates (about 400 nm min-1) and very low phosphine generation (isolation structures was planarized and scratches, slurry particles and smearing of InP were absent. Additionally, wafers polished at pH 6 showed very low dishing values of about 12-15 nm, determined by cross sectional SEM. During the polishing of blanket GaAs, GaAs RRs were negligible with deionized water or with silica slurries alone. They were relatively high in aq. solutions of H2O2 alone and showed a strong pH dependence, with significantly higher RRs in the alkaline region. The addition of silica particles to aq. H2O2 did not increase the GaAs RRs significantly. The evolution of arsenic trihydride (AsH3) during the dissolution of GaAs in aq. H2O2 solution was similarly higher in the basic pH range than in neutral pH or in the acidic pH range. However, no AsH3 was measured during polishing, evidently because of the relatively high water solubility of AsH3. The work done on InGaAs polishing shows that InGaAs RR trends are different from those observed for InP or GaAs. InGaAs RRs at pH 2 are higher than those at pH 10 and highest at pH 4. Dissolution rates (DRs), Fourier Transform Infrared Spectroscopy (FTIR), contact angles, X-Ray Photoelectron Spectroscopy (XPS), X-Ray Fluorescence Spectroscopy (XRF), zeta potential measurements and calculated Gibbs free energy changes of the reactions involved during polishing and gas formation were used to discuss the observed RRs and hydride gas generation trends and to propose the reaction pathways involved in the material removal and in hydride gas generation mechanisms.

  15. Theoretical Studies of High Energy Transport of Electrons and Holes in Gallium Arsenide, Indium Phosphide, Indium Arsenide, and Gallium Antimonide.

    Science.gov (United States)

    1984-06-01

    interest and support in many aspects of this work. The author would also like to thank Professors N. Holonyak Jr., G. * Stillman, and B. Wheeler for...York, 1958. [321 R. P. Feynman , Statistical Mechanics, A Set of Lectures, W. A. * -. Benjamin, Reading Ma., 1972. [33] G. 3. lafrate, "Quantum transport

  16. Ultra-low threshold gallium nitride photonic crystal nanobeam laser

    Energy Technology Data Exchange (ETDEWEB)

    Niu, Nan, E-mail: nanniu@fas.harvard.edu; Woolf, Alexander; Wang, Danqing; Hu, Evelyn L. [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Zhu, Tongtong; Oliver, Rachel A. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Quan, Qimin [Rowland Institute at Harvard University, Cambridge, Massachusetts 02142 (United States)

    2015-06-08

    We report exceptionally low thresholds (9.1 μJ/cm{sup 2}) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance.

  17. Rows of Dislocation Loops in Aluminium Irradiated by Aluminium Ions

    DEFF Research Database (Denmark)

    Henriksen, L.; Johansen, A.; Koch, J.

    1967-01-01

    Single-crystal aluminium specimens, irradiated with 50-keV aluminium ions, contain dislocation loops that are arranged in regular rows along <110 > directions. ©1967 The American Institute of Physics......Single-crystal aluminium specimens, irradiated with 50-keV aluminium ions, contain dislocation loops that are arranged in regular rows along directions. ©1967 The American Institute of Physics...

  18. The Potentiostatic Electrodeposition of Indium doped Aluminium Selenide Thin Films

    Directory of Open Access Journals (Sweden)

    R.K. Pathak and Sipi Mohan

    2013-12-01

    Full Text Available The In containing AlSe thin films were electrosynthesized by electrochemical co-deposition technique. The morphological properties of thin films were studied through the Scanning Electron Micrograph (SEM while the structural features through X-Ray Diffraction technique (XRD. The deposition current along with the film thickness values, the charge carrier density, flat band potential, corrosion characteristics i.e., corrosion current, corrosion potential and corrosion rate were calculated.

  19. Transport mechanisms in 8-tris-hydroxyquinoline aluminium (Alq3) electronic layers: a study by photodipolar absorption

    OpenAIRE

    Moliton, André; Lucas, Bruno; Berthon, Sebastien; Rammal, Wassim; HIORNS, Roger Clive

    2006-01-01

    Abstract This paper describes the role of traps in the electronic conductivity of 8-tris-hydroxyquinoline aluminium in a conventional sandwich structure with indium tin oxide and aluminium electrodes. New results obtained by photodipolar absorption techniques and impedance spectroscopy are presented. The former method acts as a probe to highlight the role of traps. It is shown that optical pumping of electrons to trap levels gives a clear increase in dielectric absorption due to ...

  20. Recovery in aluminium

    DEFF Research Database (Denmark)

    Gundlach, Carsten

    2006-01-01

    In the present thesis the development of a unique experimental method for volume characterisation of individual embedded crystallites down to a radius of 150 nm is presented. This method is applied to in-situ studies of recovery in aluminium. The method is an extension of 3DXRD microscopy, an X...... are represented as strings. To identify the strings a combination of a 5D connected component type algorithm and multi-peak fitting was found to be superior. The first use of the method was a study of recovery of a deformed aluminium alloy (AA1050). The aluminium alloy was deformed by cold rolling to a thickness...

  1. Nanoscale optical properties of indium gallium nitride/gallium nitride nanodisk-in-rod heterostructures.

    Science.gov (United States)

    Zhou, Xiang; Lu, Ming-Yen; Lu, Yu-Jung; Jones, Eric J; Gwo, Shangjr; Gradečak, Silvija

    2015-03-24

    III-nitride based nanorods and nanowires offer great potential for optoelectronic applications such as light emitting diodes or nanolasers. We report nanoscale optical studies of InGaN/GaN nanodisk-in-rod heterostructures to quantify uniformity of light emission on the ensemble level, as well as the emission characteristics from individual InGaN nanodisks. Despite the high overall luminescence efficiency, spectral and intensity inhomogeneities were observed and directly correlated to the compositional variations among nanodisks and to the presence of structural defect, respectively. Observed light quenching is correlated to type I1 stacking faults in InGaN nanodisks, and the mechanisms for stacking fault induced nonradiative recombinations are discussed in the context of band structure around stacking faults and Fermi level pinning at nanorod surfaces. Our results highlight the importance of controlling III-nitride nanostructure growths to further reduce defect formation and ensure compositional homogeneity for optoelectronic devices with high efficiencies and desirable spectrum response.

  2. Growth and fabrication of gallium nitride and indium gallium nitride-based optoelectronic devices

    Science.gov (United States)

    Berkman, Erkan Acar

    In this study, heteroepitaxial growth of III-Nitrides was performed by metalorganic chemical vapor deposition (MOCVD) technique on (0001) Al 2O3 substrates to develop GaN and InxGa1-x N based optoelectronic devices. Comprehensive experimental studies on emission and relaxation mechanisms of InxGa1-xN quantum wells (QWs) and InxGa 1-xN single layers were performed. The grown films were characterized by x-ray diffraction (XRD), Hall Effect measurements, photoluminescence measurements (PL) and transmission electron microscopy (TEM). An investigation on the effect of number and width of QWs on PL emission properties of InxGa 1-xN single QWs and multi-quantum wells (MQW) was conducted. The experimental results were explained by the developed theoretical bandgap model. The study on the single layer InxGa1-xN films within and beyond critical layer thickness (CLT) demonstrated that thick InxGa 1-xN films display simultaneous presence of strained and (partially) relaxed layers. The In incorporation into the lattice was observed to be dependent on the strain state of the film. The findings on InxGa1-xN QWs and single layers were implemented in the development of InxGa1-xN based LEDs and photodiodes, respectively. The as-grown samples were fabricated using conventional lithography techniques into various optoelectronic devices including long wavelength LEDs, dichromatic monolithic white LEDs, and p-i-n photodiodes. Emission from InxGa1-xN/GaN MQW LEDs at wavelengths as long as 625nm was demonstrated. This is one of the longest peak emission wavelengths reported for MOCVD grown InxGa1-xN MQW structures. Dichromatic white emission in LEDs was realized by utilizing two InGaN MQW active regions emitting at complementary wavelengths. InGaN p-i-n photodiodes operating at various regions of the visible spectrum tailored by the i-layer properties were developed. This was achieved by the novel approach of employing InxGa1-xN in all layers of the p-i-n photodiodes, enabling nearly-lattice matched growth. The photodiodes displayed zero-bias responsivity values as high as 0.037A/W, and the peak responsivity wavelength of the photodiodes ranged between 416nm and 466nm. To the author's best knowledge, the latter value remains the longest peak detection wavelength among InxGa1-xN based p-i-n photodiodes.

  3. Gallium-containing anticancer compounds

    OpenAIRE

    Chitambar, Christopher R.

    2012-01-01

    There is an ever pressing need to develop new drugs for the treatment of cancer. Gallium nitrate, a group IIIa metal salt, inhibits the proliferation of tumor cells in vitro and in vivo and has shown activity against non-Hodgkin’s lymphoma and bladder cancer in clinical trials. Gallium can function as an iron mimetic and perturb iron-dependent proliferation and other iron-related processes in tumor cells. Gallium nitrate lacks cross resistance with conventional chemotherapeutic drugs and is n...

  4. Field-effect transistors based on cubic indium nitride.

    Science.gov (United States)

    Oseki, Masaaki; Okubo, Kana; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2014-02-04

    Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide, and gallium nitride have reached their physical performance limits. Therefore, new materials with high carrier velocities should be sought for the fabrication of next-generation, ultra-high-speed transistors. Indium nitride (InN) has attracted much attention for this purpose because of its high electron drift velocity under a high electric field. Thick InN films have been applied to the fabrication of field-effect transistors (FETs), but the performance of the thick InN transistors was discouraging, with no clear linear-saturation output characteristics and poor on/off current ratios. Here, we report the epitaxial deposition of ultrathin cubic InN on insulating oxide yttria-stabilized zirconia substrates and the first demonstration of ultrathin-InN-based FETs. The devices exhibit high on/off ratios and low off-current densities because of the high quality top and bottom interfaces between the ultrathin cubic InN and oxide insulators. This first demonstration of FETs using a ultrathin cubic indium nitride semiconductor will thus pave the way for the development of next-generation high-speed electronics.

  5. Fabrication methods and applications of microstructured gallium based liquid metal alloys

    Science.gov (United States)

    Khondoker, M. A. H.; Sameoto, D.

    2016-09-01

    This review contains a comparative study of reported fabrication techniques of gallium based liquid metal alloys embedded in elastomers such as polydimethylsiloxane or other rubbers as well as the primary challenges associated with their use. The eutectic gallium-indium binary alloy (EGaIn) and gallium-indium-tin ternary alloy (galinstan) are the most common non-toxic liquid metals in use today. Due to their deformability, non-toxicity and superior electrical conductivity, these alloys have become very popular among researchers for flexible and reconfigurable electronics applications. All the available manufacturing techniques have been grouped into four major classes. Among them, casting by needle injection is the most widely used technique as it is capable of producing features as small as 150 nm width by high-pressure infiltration. One particular fabrication challenge with gallium based liquid metals is that an oxide skin is rapidly formed on the entire exposed surface. This oxide skin increases wettability on many surfaces, which is excellent for keeping patterned metal in position, but is a drawback in applications like reconfigurable circuits, where the position of liquid metal needs to be altered and controlled accurately. The major challenges involved in many applications of liquid metal alloys have also been discussed thoroughly in this article.

  6. A gallium nitride single-photon source operating at 200 K.

    Science.gov (United States)

    Kako, Satoshi; Santori, Charles; Hoshino, Katsuyuki; Götzinger, Stephan; Yamamoto, Yoshihisa; Arakawa, Yasuhiko

    2006-11-01

    Fundamentally secure quantum cryptography has still not seen widespread application owing to the difficulty of generating single photons on demand. Semiconductor quantum-dot structures have recently shown great promise as practical single-photon sources, and devices with integrated optical cavities and electrical-carrier injection have already been demonstrated. However, a significant obstacle for the application of commonly used III-V quantum dots to quantum-information-processing schemes is the requirement of liquid-helium cryogenic temperatures. Epitaxially grown gallium nitride quantum dots embedded in aluminium nitride have the potential for operation at much higher temperatures. Here, we report triggered single-photon emission from gallium nitride quantum dots at temperatures up to 200 K, a temperature easily reachable with thermo-electric cooling. Gallium nitride quantum dots also open a new wavelength region in the blue and near-ultraviolet portions of the spectrum for single-photon sources.

  7. Optical properties of aluminium-gallium-nitride semiconductors; Optische Eigenschaften von Aluminium-Galliumnitrid-Halbleitern

    Energy Technology Data Exchange (ETDEWEB)

    Roeppischer, Marcus

    2011-08-17

    In this work fundamental optical properties of AlN, GaN and their alloys are presented. Spectroscopic ellipsometry from the near infrared (NIR) to the vacuum-ultraviolet (VUV) spectral region was the main tool to investigate these properties. The complete dielectric function (DF) of cubic as well as hexagonal GaN and AlN in the range between 0.6 eV and 20 eV is shown here, for the first time. A layer model including surface roughness and buffer layers was used to separate the DF of the investigated layer from the measured pseudo-DF. Afterwards all absorption structures in the DF's are discussed in detail. Due to the comparison with calculated bandstructures these absorption structures could be connected to interband transitions at high symmetry points in the Brillouin zone (BZ). Within this analysis similarities and differences between GaN and AlN are discussed. For zincblende (zb) AlN a pronounced absorption tail below the direct band gap transition was detected. This behaviour is typical for a phonon-assisted indirect absorption. In contrast zb-GaN exhibits a clear direct absorption. Furthermore, a change in the energetic position of the two main interband absorptions E1 and E2 at the L- and X-point of the BZ was found. A detailed analysis of the anisotropic fundamental band gap of hexagonal AlN offers a interchange of the two topmost valance bands at the BZ center compared to GaN. Due to this permutation the fundamental band edge of wurtzit (wz) AlN is only visible for parallel polarized light, while for GaN it can be detect in the perpendicular configuration. By analysing the energetic position of the three excitonic transitions the crystal-field- and spin-orbit-splitting were defined to be {delta}{sub cr}=-226 meV and {delta}{sub so}=14 meV. In addition, the energetic positions for these transitions at T=15 K are 6.0465 eV, 6.2694 eV and 6.2775 eV. The comparison between measurements at room and low temperature shows an energetic shift for both absorption edges of about 80 meV. By comparing the energetic positions of the excitonic transitions with the lattice parameters of different samples on silicon, sapphire and SiC substrate the influence of strain on the optical properties of wz-AlN was investigated. Due to this analysis the deformation potentials within the cubic approximation were calculated. Finally the spectral region below the fundamental band gap absorption of cubic AlGaN layers were studied. Therefore an analytical model was developed to calculate the dispersion in the transparent range for an arbitrary Al-content.

  8. Zintl cluster chemistry in the alkali-metal-gallium systems

    Energy Technology Data Exchange (ETDEWEB)

    Henning, Robert [Iowa State Univ., Ames, IA (United States)

    1998-03-27

    Previous research into the alkali-metal-gallium systems has revealed a large variety of networked gallium deltahedra. The clusters are analogues to borane clusters and follow the same electronic requirements of 2n+2 skeletal electrons for closo-deltahedra. This work has focused on compounds that do not follow the typical electron counting rules. The first isolated gallium cluster was found in Cs8Ga11. The geometry of the Ga117- unit is not deltahedral but can be described as a penta-capped trigonal prism. The reduction of the charge from a closo-Ga1113- to Ga117- is believed to be the driving force of the distortion. The compound is paramagnetic because of an extra electron but incorporation of a halide atom into the structure captures the unpaired electron and forms a diamagnetic compound. A second isolated cluster has been found in Na10Ga10Ni where the tetra-capped trigonal prismatic gallium is centered by nickel. Stabilization of the cluster occurs through Ni-Ga bonding. A simple two-dimensional network occurs in the binary K2Ga3 Octahedra are connected through four waist atoms to form a layered structure with the potassium atoms sitting between the layers. Na30.5Ga60-xAgx is nonstoichiometric and needs only a small amount of silver to form (x ~ 2-6). The structure is composed of three different clusters which are interconnected to form a three-dimensional structure. The RbGa3-xAux system is also nonstoichiometric with a three-dimensional structure composed of Ga8 dodecahedra and four-bonded gallium atoms. Unlike Na30.5Ga60-xAgx, the RbGa3 binary is also stable. The binary is formally a Zintl phase but the ternary is not. Some chemistry in the alkali-metal-indium system also has been explored. A new potassium-indium binary

  9. Extraction of indium from indium-zinc concentrates

    Institute of Scientific and Technical Information of China (English)

    LI Shi-qing; TANG Mo-tang; HE Jing; YANG Sheng-hai; TANG Chao-bo; CHEN Yong-ming

    2006-01-01

    A new process for extracting indium from indium-zinc concentrates was proposed. The process can directly extract indium from removed copper solution by D2EHPA, and cancel the stage of removing iron in the traditional process because of using iron and part of zinc in the In-Zn concentrates for direct preparing high quality Mn-Zn soft magnetic ferrites. The technologies in the processes, such as leaching the neutral leached residues with high concentrated acid at high temperature, reduction ferric and removing copper, and extracting indium, were investigated. The results show that total recovery ratio of indium is increased from less than 70% in the traditional process to more than 95%. This process has the advantages of largely simplifying the procedure of indium extraction, zero draining off of iron residue and zero emitting of SO2. So this is a clean production process.

  10. The cellular toxicity of aluminium.

    Science.gov (United States)

    Exley, C; Birchall, J D

    1992-11-07

    Aluminium is a serious environmental toxicant and is inimical to biota. Omnipresent, it is linked with a number of disorders in man including Alzheimer's disease, Parkinson's dementia and osteomalacia. Evidence supporting aluminium as an aetiological agent in such disorders is not conclusive and suffers principally from a lack of consensus with respect to aluminium's toxic mode of action. Obligatory to the elucidation of toxic mechanisms is an understanding of the biological availability of aluminium. This describes the fate of and response to aluminium in any biological system and is thus an important influence of the toxicity of aluminium. A general theme in much aluminium toxicity is an accelerated cell death. Herein mechanisms are described to account for cell death from both acute and chronic aluminium challenges. Aluminium associations with both extracellular surfaces and intracellular ligands are implicated. The cellular response to aluminium is found to be biphasic having both stimulatory and inhibitory components. In either case the disruption of second messenger systems is observed and GTPase cycles are potential target sites. Specific ligands for aluminium at these sites are unknown though are likely to be proteins upon which oxygen-based functional groups are orientated to give exceptionally strong binding with the free aluminium ion.

  11. Gallium--A smart metal

    Science.gov (United States)

    Foley, Nora; Jaskula, Brian W.

    2013-01-01

    Gallium is a soft, silvery metallic element with an atomic number of 31 and the chemical symbol Ga. The French chemist Paul-Emile Lecoq de Boisbaudran discovered gallium in sphalerite (a zinc-sulfide mineral) in 1875 using spectroscopy. He named the element "gallia" after his native land of France (formerly Gaul; in Latin, Gallia). The existence of gallium had been predicted in 1871 by Dmitri Mendeleev, the Russian chemist who published the first periodic table of the elements. Mendeleev noted a gap in his table and named the missing element "eka-aluminum" because he determined that its location was one place away from aluminum in the table. Mendeleev thought that the missing element (gallium) would be very much like aluminum in its chemical properties, and he was right. Solid gallium has a low melting temperature (~29 degrees Celsius, or °C) and an unusually high boiling point (~2,204 °C). Because of these properties, the earliest uses of gallium were in high-temperature thermometers and in designing metal alloys that melt easily. The development of a gallium-based direct band-gap semiconductor in the 1960s led to what is now one of the most well-known applications for gallium-based products--the manufacture of smartphones and data-centric networks.

  12. Fatal aluminium phosphide poisoning

    Directory of Open Access Journals (Sweden)

    Meena Mahesh Chand

    2015-06-01

    Full Text Available Aluminium phosphide (AlP is a cheap solid fumigant and a highly toxic pesticide which is commonly used for grain preservation. AlP has currently aroused interest with a rising number of cases in the past four decades due to increased use for agricultural and non-agricultural purposes. Its easy availability in the markets has increased also its misuse for committing suicide. Phosphine inhibits cellular oxygen utilization and can induce lipid peroxidation. Poisoning with AlP has often occurred in attempts to commit suicide, and that more often in adults than in teenagers. This is a case of suicidal consumption of aluminium phosphide by a 32-year-old young medical anesthetist. Toxicological analyses detected aluminium phosphide. We believe that free access of celphos tablets in grain markets should be prohibited by law.

  13. Aluminium in human breast tissue.

    Science.gov (United States)

    Exley, Christopher; Charles, Lisa M; Barr, Lester; Martin, Claire; Polwart, Anthony; Darbre, Philippa D

    2007-09-01

    Aluminium is omnipresent in everyday life and increased exposure is resulting in a burgeoning body burden of this non-essential metal. Personal care products are potential contributors to the body burden of aluminium and recent evidence has linked breast cancer with aluminium-based antiperspirants. We have used graphite furnace atomic absorption spectrometry (GFAAS) to measure the aluminium content in breast biopsies obtained following mastectomies. The aluminium content of breast tissue and breast tissue fat were in the range 4-437 nmol/g dry wt. and 3-192 nmol/g oil, respectively. The aluminium content of breast tissue in the outer regions (axilla and lateral) was significantly higher (P=0.033) than the inner regions (middle and medial) of the breast. Whether differences in the regional distribution of aluminium in the breast are related to the known higher incidence of tumours in the outer upper quadrant of the breast remains to be ascertained.

  14. Fire exposed aluminium structures

    NARCIS (Netherlands)

    Maljaars, J.; Fellinger, J.H.H.; Soetens, F.

    2006-01-01

    Material properties and mechanical response models for fire design of steel structures are based on extensive research and experience. Contrarily, the behaviour of aluminium load bearing structures exposed to fire is relatively unexplored. This article gives an overview of physical and mechanical pr

  15. Gallium-67 myocardial scintigraphy in dilated cardiomyopathy

    Energy Technology Data Exchange (ETDEWEB)

    Aoki, Toshikazu; Konishi, Tokuji; Koyama, Takao; Morita, Yuriko; Futagami, Yasuo; Hayashi, Takamaro; Hamada, Masayuki; Nakano, Takeshi

    1988-12-01

    Gallium-67 imaging has been employed clinically in the detection of malignant tumor or chronic inflammatory disease. In this study, we evaluated the usefulness of Gallium-67 myocardial imaging as an adjunct to endomyocardial biopsy in the diagnosis of myocarditis. Nine patients who had been diagnosed clinically as dilated cardiomyopathy underwent Gallium-67 myocardial imaging. Left ventricular endomyocardial biopsy was performed on all patients. Two had positive Gallium-67 imaging, but myocarditis was not proven in their tissue specimen. Two others with proven myocarditis had negative Gallium-67 imaging. These results suggest that Gallium-67 imaging is not always a useful tool to detect latent myocarditis in patients with dilated cardiomyopathy.

  16. Gallium Safety in the Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Cadwallader, L.C.

    2003-05-07

    A university laboratory experiment for the US Department of Energy magnetic fusion research program required a simulant for liquid lithium. The simulant choices were narrowed to liquid gallium and galinstan (Ga-In-Sn) alloy. Safety information on liquid gallium and galinstan were compiled, and the choice was made to use galinstan. A laboratory safety walkthrough was performed in the fall of 2002 to support the galinstan experiment. The experiment has been operating successfully since early 2002.

  17. Gallium Safety in the Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Lee C. Cadwallader

    2003-06-01

    A university laboratory experiment for the US Department of Energy magnetic fusion research program required a simulant for liquid lithium. The simulant choices were narrowed to liquid gallium and galinstan (Ga-In-Sn) alloy. Safety information on liquid gallium and galinstan were compiled, and the choice was made to use galinstan. A laboratory safety walkthrough was performed in the fall of 2002 to support the galinstan experiment. The experiment has been operating successfully since early 2002.

  18. Aluminium and human breast diseases.

    Science.gov (United States)

    Darbre, P D; Pugazhendhi, D; Mannello, F

    2011-11-01

    The human breast is exposed to aluminium from many sources including diet and personal care products, but dermal application of aluminium-based antiperspirant salts provides a local long-term source of exposure. Recent measurements have shown that aluminium is present in both tissue and fat of the human breast but at levels which vary both between breasts and between tissue samples from the same breast. We have recently found increased levels of aluminium in noninvasively collected nipple aspirate fluids taken from breast cancer patients (mean 268 ± 28 μg/l) compared with control healthy subjects (mean 131 ± 10 μg/l) providing evidence of raised aluminium levels in the breast microenvironment when cancer is present. The measurement of higher levels of aluminium in type I human breast cyst fluids (median 150 μg/l) compared with human serum (median 6 μg/l) or human milk (median 25 μg/l) warrants further investigation into any possible role of aluminium in development of this benign breast disease. Emerging evidence for aluminium in several breast structures now requires biomarkers of aluminium action in order to ascertain whether the presence of aluminium has any biological impact. To this end, we report raised levels of proteins that modulate iron homeostasis (ferritin, transferrin) in parallel with raised aluminium in nipple aspirate fluids in vivo, and we report overexpression of mRNA for several S100 calcium binding proteins following long-term exposure of MCF-7 human breast cancer cells in vitro to aluminium chlorhydrate.

  19. Roll bonding of strained aluminium

    DEFF Research Database (Denmark)

    Staun, Jakob M.

    2003-01-01

    This report investigates roll bonding of pre-strained (å ~ 4) aluminium sheets to produce high strain material from high purity aluminium (99.996%) and commercial pure aluminium (99.6%). The degree of bonding is investigated by optical microscopy and ultrasonic scanning. Under the right...... of the cross rolled volume fraction is found. To further asses this effect, and the anisotropy, it is necessary to acquire knowledge about both texture and microstructure, e.g. by TEM. Roll bonding of pre-strained aluminium is found to be a possible alternative to ARB in the quest for ultra-fine grained...

  20. Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

    CERN Document Server

    Morgado, J; Charas, A; Matos, M; Alcacer, L; Cacialli, F

    2003-01-01

    We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide.

  1. Vacancy-indium clusters in implanted germanium

    KAUST Repository

    Chroneos, Alexander I.

    2010-04-01

    Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

  2. Gas sensitivity of indium oxide

    Institute of Scientific and Technical Information of China (English)

    HUANG Shi-zhen; LIN Wei; CHEN Wen-zhe

    2009-01-01

    The yellow indium oxide nanoparticles were prepared by sintering the white deposition at 500 ℃. The crystalline indium chloride and ammonia were used as the starting material. The results show that, by analyzing the particles through X-ray diffraction and TEM, the particles are very small, spherical, and the particle size is about 40 nm. The direct-heat components made from indium oxide in Cl2 and NO2 was tested respectively, the component is far more sensitive to NO2 than to Cl2 at low heating temperature, and the status is reversed at high heating temperature.

  3. First Principles Study of Aluminium Vacancy in Wurtzite Aluminium Nitride

    Institute of Scientific and Technical Information of China (English)

    GAO Ting-Ge; YI Jue-Min; ZHOU Zi-Yao; HU Xiao-Dong

    2008-01-01

    @@ We report that the aluminium vacancy in wurtzite AIN brings about two impurity levels e and a2 in the band gap, not just one single t2 level The aluminium vacancy carries a magnetic moment of 1 μB in the ground state. The molecule orbit of the aluminium vacancy becomes e↑↑ a2↑ rather than e↑↑ a2↑. The calculation is carried out by using the CASTEP code. The intrinsic symmetry of wurtzite A1N is the driving force for this spin splitting. Finally the symmetry of wurtzite AlN results in an anti-ferromagnetic coupling between the aluminium vacancies, as is predicted. Our findings are helpful to gain a more through understanding of the structural and spin property of aluminium vacancy in wurtzite AIN.

  4. Fatigue tests on aluminium bridges

    NARCIS (Netherlands)

    Maljaars, J.; Soetens, F.; Straalen, IJ.J. van

    2004-01-01

    Traffic bridges are subjected to variable loads and should therefore be checked on fatigue. Especially low weight materials, like aluminium, are sensitive to fatigue, because the variable load is a substantial part of the total load. This paper shows the structural design of an aluminium bridge load

  5. Fatigue tests on aluminium bridges

    NARCIS (Netherlands)

    Maljaars, J.; Soetens, F.; Straalen, IJ.J. van

    2005-01-01

    Traffic bridges are subjected to variable loads and should therefore be checked on fatigue. Especially low weight materials, like aluminium, are sensitive to fatigue, because the variable load is a substantial part of the total load. This paper shows the structural design of an aluminium bridge load

  6. Gallium phosphide energy converters

    Energy Technology Data Exchange (ETDEWEB)

    Sims, P.E.; Dinetta, L.C.; Goetz, M.A.

    1995-10-01

    Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp {minus}17) A/sq cm have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.

  7. Aluminium in Drinkwater: voorkomen, herkomst en gezondheidsaspecten

    NARCIS (Netherlands)

    Versteegh JFM; de Boer JLM; van den Velde-Koerts T

    1992-01-01

    Aluminium can occur in drinking water because of the application of aluminium salts as a coagulant in the treatment of drinking water. In the Netherlands mostly iron salts are used instead of aluminium. Besides this aluminium can be present in the source for drinking water. In shallow groundwater

  8. Structure and physical properties of gallium selenide laser-intercalated with nickel

    Science.gov (United States)

    Pokladok, N. T.; Grygorchak, I. I.; Lukiyanets, B. A.; Popovich, D. I.

    2007-04-01

    Intercalated crystals of indium and gallium selenide are prepared. It is shown that laser intercalation of nickel into GaSe samples leads to a giant magnetoresistive effect whose magnitude and sign depend on the concentration of the guest component. The giant magnetoresistive effect in the InSe intercalation compounds is considerably weaker and does not exceed 5%. The experimental data obtained are explained in terms of magnetic delocalization (localization) of charge carriers with the participation of states of intercalated magnetically active atoms in the vicinity of the Fermi level.

  9. Aluminium, antiperspirants and breast cancer.

    Science.gov (United States)

    Darbre, P D

    2005-09-01

    Aluminium salts are used as the active antiperspirant agent in underarm cosmetics, but the effects of widespread, long term and increasing use remain unknown, especially in relation to the breast, which is a local area of application. Clinical studies showing a disproportionately high incidence of breast cancer in the upper outer quadrant of the breast together with reports of genomic instability in outer quadrants of the breast provide supporting evidence for a role for locally applied cosmetic chemicals in the development of breast cancer. Aluminium is known to have a genotoxic profile, capable of causing both DNA alterations and epigenetic effects, and this would be consistent with a potential role in breast cancer if such effects occurred in breast cells. Oestrogen is a well established influence in breast cancer and its action, dependent on intracellular receptors which function as ligand-activated zinc finger transcription factors, suggests one possible point of interference from aluminium. Results reported here demonstrate that aluminium in the form of aluminium chloride or aluminium chlorhydrate can interfere with the function of oestrogen receptors of MCF7 human breast cancer cells both in terms of ligand binding and in terms of oestrogen-regulated reporter gene expression. This adds aluminium to the increasing list of metals capable of interfering with oestrogen action and termed metalloestrogens. Further studies are now needed to identify the molecular basis of this action, the longer term effects of aluminium exposure and whether aluminium can cause aberrations to other signalling pathways in breast cells. Given the wide exposure of the human population to antiperspirants, it will be important to establish dermal absorption in the local area of the breast and whether long term low level absorption could play a role in the increasing incidence of breast cancer.

  10. The toxicity of aluminium in humans.

    Science.gov (United States)

    Exley, C

    2016-06-01

    We are living in the 'aluminium age'. Human exposure to aluminium is inevitable and, perhaps, inestimable. Aluminium's free metal cation, Alaq(3+), is highly biologically reactive and biologically available aluminium is non-essential and essentially toxic. Biologically reactive aluminium is present throughout the human body and while, rarely, it can be acutely toxic, much less is understood about chronic aluminium intoxication. Herein the question is asked as to how to diagnose aluminium toxicity in an individual. While there are as yet, no unequivocal answers to this problem, there are procedures to follow to ascertain the nature of human exposure to aluminium. It is also important to recognise critical factors in exposure regimes and specifically that not all forms of aluminium are toxicologically equivalent and not all routes of exposure are equivalent in their delivery of aluminium to target sites. To ascertain if Alzheimer's disease is a symptom of chronic aluminium intoxication over decades or breast cancer is aggravated by the topical application of an aluminium salt or if autism could result from an immune cascade initiated by an aluminium adjuvant requires that each of these is considered independently and in the light of the most up to date scientific evidence. The aluminium age has taught us that there are no inevitabilities where chronic aluminium toxicity is concerned though there are clear possibilities and these require proving or discounting but not simply ignored.

  11. Oligonuclear gallium nitrogen cage compounds: molecular intermediates on the way from gallium hydrazides to gallium nitride.

    Science.gov (United States)

    Uhl, Werner; Abel, Thomas; Hagemeier, Elke; Hepp, Alexander; Layh, Marcus; Rezaeirad, Babak; Luftmann, Heinrich

    2011-01-03

    Gallium hydrazides are potentially applicable as facile starting compounds for the generation of GaN by thermolysis. The decomposition pathways are, however, complicated and depend strongly on the substituents attached to the gallium atoms and the hydrazido groups. This paper describes some systematic investigations into the thermolysis of the gallium hydrazine adduct Bu(t)(3)Ga←NH(2)-NHMe (1a) and the dimeric gallium hydrazides [R(2)Ga(N(2)H(2)R')](2) (2b, R = Bu(t), R' = Bu(t); 2c, R = Pr(i), R' = Ph; 2d, R = Me, R' = Bu(t)) which have four- or five-membered heterocycles in their molecular cores. Heating of the adduct 1a to 170 °C gave the heterocyclic compound Bu(t)(2)Ga(μ-NH(2))[μ-N(Me)-N(=CH(2))]GaBu(t)(2) (3) by cleavage of N-N bonds and rearrangement. 3 was further converted at 400 °C into the tetrameric gallium cyanide (Bu(t)(2)GaCN)(4) (4). The thermolysis of the hydrazide (Bu(t)(2)Ga)(2)(NH-NHBu(t))(2) (2b) at temperatures between 270 and 420 °C resulted in cleavage of all N-N bonds and the formation of an octanuclear gallium imide, (Bu(t)GaNH)(8) (6). The trimeric dialkylgallium amide (Bu(t)(2)GaNH(2))(3) (5) was isolated as an intermediate. Thermolysis of the hydrazides (Pr(i)(2)Ga)(2)(NH-NHPh)(NH(2)-NPh) (2c) and (Me(2)Ga)(2)(NH-NHBu(t))(2) (2d) proceeded in contrast with retention of the N-N bonds and afforded a variety of novel gallium hydrazido cage compounds with four gallium atoms and up to four hydrazido groups in a single molecule: (Pr(i)Ga)(4)(NH-NPh)(3)NH (7), (MeGa)(4)(NH-NBu(t))(4) (8), (MeGa)(4)(NH-NBu(t))(3)NBu(t) (9), and (MeGa)(4)(NHNBu(t))(3)NH (10). Partial hydrolysis gave reproducibly the unique octanuclear mixed hydrazido oxo compound (MeGa)(8)(NHNBu(t))(4)O(4) (11).

  12. Common features of gallium perovskites

    NARCIS (Netherlands)

    Aleksiyko, R; Berkowski, M; Byszewski, P; Dabrowski, B; Diduszko, R; Fink-Finowicki, J; Vasylechko, LO

    2001-01-01

    The Czochralski and floating zone methods have been used to grow single crystals of gallium perovskites solid solutions with rare earth elements La, Pr, Nd, Sm and with Sr. The structure of the crystals has been investigated by powder X-ray, synchrotron radiation and neutron diffraction methods over

  13. Synthesis, characterization and catalytic activity of indium substituted nanocrystalline Mobil Five (MFI) zeolite

    Energy Technology Data Exchange (ETDEWEB)

    Shah, Kishor Kr. [Department of Chemistry, ADP College, Nagaon, Assam 782002 (India); Nandi, Mithun [Department of Chemistry, Gauhati University, Guwahati, Assam 781014 (India); Talukdar, Anup K., E-mail: anup_t@sify.com [Department of Chemistry, Gauhati University, Guwahati, Assam 781014 (India)

    2015-06-15

    Highlights: • In situ modification of the MFI zeolite by incorporation of indium. • The samples were characterized by XRD, FTIR, TGA, UV–vis (DRS), SAA, EDX and SEM. • The incorporation of indium was confirmed by XRD, FT-IR, UV–vis (DRS), EDX and TGA. • Hydroxylation of phenol reaction was studied on the synthesized catalysts. - Abstract: A series of indium doped Mobil Five (MFI) zeolite were synthesized hydrothermally with silicon to aluminium and indium molar ratio of 100 and with aluminium to indium molar ratios of 1:1, 2:1 and 3:1. The MFI zeolite phase was identified by XRD and FT-IR analysis. In XRD analysis the prominent peaks were observed at 2θ values of around 6.5° and 23° with a few additional shoulder peaks in case of all the indium incorporated samples suggesting formation of pure phase of the MFI zeolite. All the samples under the present investigation were found to exhibit high crystallinity (∼92%). The crystallite sizes of the samples were found to vary from about 49 to 55 nm. IR results confirmed the formation of MFI zeolite in all cases showing distinct absorbance bands near 1080, 790, 540, 450 and 990 cm{sup −1}. TG analysis of In-MFI zeolites showed mass losses in three different steps which are attributed to the loss due to adsorbed water molecules and the two types TPA{sup +} cations. Further, the UV–vis (DRS) studies reflected the position of the indium metal in the zeolite framework. Surface area analysis of the synthesized samples was carried out to characterize the synthesized samples The analysis showed that the specific surface area ranged from ∼357 to ∼361 m{sup 2} g{sup −1} and the pore volume of the synthesized samples ranged from 0.177 to 0.182 cm{sup 3} g{sup −1}. The scanning electron microscopy studies showed the structure of the samples to be rectangular and twinned rectangular shaped. The EDX analysis was carried out for confirmation of Si, Al and In in zeolite frame work. The catalytic activities of

  14. Gallium nitride electronics

    Science.gov (United States)

    Rajan, Siddharth; Jena, Debdeep

    2013-07-01

    In the past two decades, there has been increasing research and industrial activity in the area of gallium nitride (GaN) electronics, stimulated first by the successful demonstration of GaN LEDs. While the promise of wide band gap semiconductors for power electronics was recognized many years before this by one of the contributors to this issue (J Baliga), the success in the area of LEDs acted as a catalyst. It set the field of GaN electronics in motion, and today the technology is improving the performance of several applications including RF cell phone base stations and military radar. GaN could also play a very important role in reducing worldwide energy consumption by enabling high efficiency compact power converters operating at high voltages and lower frequencies. While GaN electronics is a rapidly evolving area with active research worldwide, this special issue provides an opportunity to capture some of the great advances that have been made in the last 15 years. The issue begins with a section on epitaxy and processing, followed by an overview of high-frequency HEMTs, which have been the most commercially successful application of III-nitride electronics to date. This is followed by review and research articles on power-switching transistors, which are currently of great interest to the III-nitride community. A section of this issue is devoted to the reliability of III-nitride devices, an area that is of increasing significance as the research focus has moved from not just high performance but also production-worthiness and long-term usage of these devices. Finally, a group of papers on new and relatively less studied ideas for III-nitride electronics, such as interband tunneling, heterojunction bipolar transistors, and high-temperature electronics is included. These areas point to new areas of research and technological innovation going beyond the state of the art into the future. We hope that the breadth and quality of articles in this issue will make it

  15. Recycling of indium from CIGS photovoltaic cells: potential of combining acid-resistant nanofiltration with liquid-liquid extraction.

    Science.gov (United States)

    Zimmermann, Yannick-Serge; Niewersch, Claudia; Lenz, Markus; Kül, Zöhre Zohra; Corvini, Philippe F-X; Schäffer, Andreas; Wintgens, Thomas

    2014-11-18

    Electronic consumer products such as smartphones, TV, computers, light-emitting diodes, and photovoltaic cells crucially depend on metals and metalloids. So-called "urban mining" considers them as secondary resources since they may contain precious elements at concentrations many times higher than their primary ores. Indium is of foremost interest being widely used, expensive, scarce and prone to supply risk. This study first investigated the capability of different nanofiltration membranes of extracting indium from copper-indium-gallium- selenide photovoltaic cell (CIGS) leachates under low pH conditions and low transmembrane pressure differences (98% by nanofiltration, separating it from parts of the Ag, Sb, Se, and Zn present. LLE using di-(2-ethylhexyl)phosphoric acid (D2EHPA) extracted 97% of the indium from the retentates, separating it from all other elements except for Mo, Al, and Sn. Overall, 95% (2.4 g m(-2) CIGS) of the indium could be extracted to the D2EHPA phase. Simultaneously, by nanofiltration the consumption of D2EHPA was reduced by >60% due to the metal concentration in the reduced retentate volume. These results show clearly the potential for efficient scarce metal recovery from secondary resources. Furthermore, since nanofiltration was applicable at very low pH (≥ 0.6), it may be applied in hydrometallurgy typically using acidic conditions.

  16. Dispersion strengthening of aluminium-aluminium-oxide products

    DEFF Research Database (Denmark)

    Hansen, Niels

    1970-01-01

    The true stress-true strain curves at room temperature and at 400°C were determined for various types of aluminium-aluminium-oxide products containing from 0.2 to 4.7 weight per cent of aluminium oxide. The effect of particles on the initial flow stress and the flow stress for 0.2% offset at room...... temperature and at 400°C is in agreement with Orowan's theory. The increase in flow stress at room temperature for strain values below 3 per cent was related to the plastic strain by the equation σ-σoy=k1ε 1/2, where σoy is the initial flow stress and where k1 increases for increasing volume fraction...... and decreasing particle size of the dispersed particles. A general expression for k1 was derived for the relationship between the dislocation density and the strain in dispersion-strengthened products...

  17. Preparation of aluminium lakes by electrocoagulation

    OpenAIRE

    Prapai Pradabkham

    2008-01-01

    Aluminium lakes have been prepared by electrocoagulation employing aluminium as electrodes. The electrocoagulation is conducted in an aqueous alcoholic solution and is completed within one hour. The dye content in the lake ranges approximately between 4-32%.

  18. Alloys of uranium and aluminium with low aluminium content; Alliages uranium-aluminium a faible teneur en aluminium

    Energy Technology Data Exchange (ETDEWEB)

    Cabane, G.; Englander, M.; Lehmann, J. [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1955-07-01

    Uranium, as obtained after spinning in phase {gamma}, presents an heterogeneous structure with large size grains. The anisotropic structure of the metal leads to an important buckling and surface distortion of the fuel slug which is incompatible with its tubular cladding for nuclear fuel uses. Different treatments have been made to obtain an isotropic structure presenting high thermal stability (laminating, hammering and spinning in phase {alpha}) without success. Alloys of uranium and aluminium with low aluminium content present important advantage in respect of non allied uranium. The introduction of aluminium in the form of intermetallic compound (UAl{sub 2}) gives a better resistance to thermal fatigue. Alloys obtained from raw casting present an improved buckling and surface distortion in respect of pure uranium. This improvement is obtained with uranium containing between 0,15 and 0,5 % of aluminium. An even more improvement in thermal stability is obtained by thermal treatments of these alloys. These new characteristics are explained by the fine dispersion of the UAl{sub 2} particles in uranium. The results after treatments obtained from an alloy slug containing 0,4 % of aluminium show no buckling or surface distortion and no elongation. (M.P.)

  19. Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys

    Science.gov (United States)

    2011-03-01

    calculated using following relations: H H s qR r N and s H H R . (3.8) Temperature-dependent Hall ( TDH ...freeze, leaving the material highly resistive. If the material is highly degenerate, TDH measurements will reveal the degenerate layer at low

  20. Design and analysis of aluminium brdiges

    NARCIS (Netherlands)

    Soetens, F.; Straalen, IJ.J. van

    2004-01-01

    Applications of aluminium have grown considerably in building and civil engineering the last decade, which is due to various aspects: light weight, durability and maintenance, use of extrusions. The paper starts with a short history of aluminium bridges and then focuses on aluminium bridges in the N

  1. Buckwheat stomatal traits under aluminium toxicity

    Directory of Open Access Journals (Sweden)

    Oleksandr E. Smirnov

    2014-04-01

    Full Text Available Aluminium influence on some stomatal parameters of common buckwheat (Fagopyrum esculentum Moench. was studied. Significant changes in stomatal density, stomatal index and stomatal shape coefficient under aluminium treatment were revealed. Stomatal closure and no difference in total stomatal potential conductance index of treatment plants were suggested as aluminium resistance characteristics.

  2. The study of aluminium anodes for high power density Al/air batteries with brine electrolytes

    Science.gov (United States)

    Nestoridi, Maria; Pletcher, Derek; Wood, Robert J. K.; Wang, Shuncai; Jones, Richard L.; Stokes, Keith R.; Wilcock, Ian

    Aluminium alloys containing small additions of both tin (∼0.1 wt%) and gallium (∼0.05 wt%) are shown to dissolve anodically at high rates in sodium chloride media at room temperatures; current densities >0.2 A cm -2 can be obtained at potentials close to the open circuit potential, ∼-1500 mV versus SCE. The tin exists in the alloys as a second phase, typically as ∼1 μm inclusions (precipitates) distributed throughout the aluminium structure, and anodic dissolution occurs to form pits around the tin inclusions. Although the distribution of the gallium in the alloy could not be established, it is also shown to be critical in the formation of these pits as well as maintaining their activity. The stability of the alloys to open circuit corrosion and the overpotential for high rate dissolution, both critical to battery performance, are shown to depend on factors in addition to elemental composition; both heat treatment and mechanical working influence the performance of the alloy. The correlation between alloy performance and their microstructure has been investigated.

  3. The study of aluminium anodes for high power density Al/air batteries with brine electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Nestoridi, Maria; Pletcher, Derek [School of Chemistry, The University, Southampton SO19 1BJ (United Kingdom); Wood, Robert J.K.; Wang, Shuncai [School of Engineering Sciences, The University, Southampton SO19 1BJ (United Kingdom); Jones, Richard L.; Stokes, Keith R.; Wilcock, Ian [dstl, Physical Sciences Department, Porton Down, Salisbury, Wilts SP4 0JQ (United Kingdom)

    2008-03-15

    Aluminium alloys containing small additions of both tin ({proportional_to}0.1 wt%) and gallium ({proportional_to}0.05 wt%) are shown to dissolve anodically at high rates in sodium chloride media at room temperatures; current densities >0.2 A cm{sup -2} can be obtained at potentials close to the open circuit potential, {proportional_to}-1500 mV versus SCE. The tin exists in the alloys as a second phase, typically as {proportional_to}1 {mu}m inclusions (precipitates) distributed throughout the aluminium structure, and anodic dissolution occurs to form pits around the tin inclusions. Although the distribution of the gallium in the alloy could not be established, it is also shown to be critical in the formation of these pits as well as maintaining their activity. The stability of the alloys to open circuit corrosion and the overpotential for high rate dissolution, both critical to battery performance, are shown to depend on factors in addition to elemental composition; both heat treatment and mechanical working influence the performance of the alloy. The correlation between alloy performance and their microstructure has been investigated. (author)

  4. Gallium-67 citrate scan in extrapulmonary tuberculosis

    Energy Technology Data Exchange (ETDEWEB)

    Lin Wanyu [Taichung Veterans General Hospital (Taiwan). Dept. of Nuclear Medicine; Hsieh Jihfang [Chi-Mei Foundation Hospital, Tainan (Taiwan)

    1999-07-01

    Aim: Whole-body gallium scan was performed to evaluate the usefulness of gallium scan for detecting extrapulmonary tuberculosis (TB) lesions. Methods: Thirty-seven patients with extrapulmonary TB were included in this study. Four patients were found to have two lesions. Totally, 41 lesions were identified, including 19 TB arthritis, 8 spinal TB, 5 TB meningitis, 3 TB lymphadenopathy, 2 TB pericarditis, 1 TB peritonitis, 1 intestinal TB, 1 skin TB and 1 renal TB. Results: Of the 41 extrapulmonary TB lesions, gallium scan detected 32 lesions with a sensitivity of 78%. All the patients with TB meningitis showed negative gallium scan. When the five cases of TB meningitis were excluded, the detection sensitivity of gallium scan increased to 88.9% (32/36). Conclusion: Our data revealed that gallium scan is a convenient and useful method for evaluating extrapulmonary TB lesions other than TB-meningitis. We suggest that gallium scan be included in the clinical routine for patients with suspected extrapulmonary TB. (orig.) [German] Ziel: Es wurden Ganzkoerper-Gallium-Szintigramme angefertigt, um den Nutzen der Gallium-Szintigraphie zur Erfassung von extrapulmonalen Tuberkuloseherden (TB) zu erfassen. Methoden: 37 Patienten mit extrapulmonaler TB wurden eingeschlossen. 4 Patienten hatten 2 Laesionen. Insgesamt wurden 41 Laesionen identifiziert, hierunter 19 TB-Arthritis, 8 spinale TB, 5 TB-Meningitis, 3 TB-Lymphadenopathie, 2 TB-Perikarditis, 1 TB-Peritonitis, 1 intestinale TB, 1 Haut-TB und eine Nieren-TB. Ergebnisse: Von den 41 extrapulmonalen TB-Herden erfasste die Gallium-Szintigraphie 32 Herde mit einer Sensitivitaet von 78%. Alle Patienten mit TB-Meningitis zeigten einen negativen Gallium-Scan. Wenn die 5 Faelle mit TB-Meningitis ausgeschlossen wurden, stieg die Sensitivititaet der Gallium-Szintigraphie auf 88,9% (32/36). Schlussfolgerung: Die Daten zeigen, dass die Gallium-Szintigraphie eine einfache und nuetzliche Methode zur Erfassung extrapulmonaler TB-Herde ist

  5. Effect of hydrogen on aluminium and aluminium alloys: A review

    DEFF Research Database (Denmark)

    Ambat, Rajan; Dwarakadasa, E.S.

    1996-01-01

    in aluminium and its alloys and its effect on mechanical properties. The importance of hydrogen embrittlement over anodic dissolution to explain the stress corrosion cracking mechanism of these alloys is also examined in considerable detail. The various experimental findings concerning the link between...

  6. Mechanism of Nickel-Aluminium Alloy Electroplating

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The effect of operating conditions on the aluminium content of Ni-Al alloy deposit and the catalytic function of NaF on electrodeposition in the nonaqueous solution containing aluminium are investigated.The results indicate that the plated aluminuim content will be increased with the rise of current density in a given range.When the current density is 2.5A/dm2,nickle-aluminium alloy containing 13.1 wt% aluminium will be deposited.The plated aluminium content will be increased by 2wt% as 0.1mol/L NaF is added to the bath.

  7. [Three cases of indium lung].

    Science.gov (United States)

    Taguchi, Osamu; Chonan, Tatsuya

    2006-07-01

    The production of indium tin oxide (ITO) has been increasing during the past decade because of its use in liquid crystal and plasma display panels. Following the first report on lethal lung injury in a ITO worker in 2001, we began pulmonary check-ups for 115 workers in the plant in our capacity of industrial physicians of the plant. Hence, we report interstitial pulmonary disease in 3 workers who had engaged in wet-surface grinding of ITO for 8 to 12 years and had significant lung injuries. The serum indium level and serum concentration of KL-6 were significantly elevated in all 3 cases. One non-smoker case among them showed severe obstructive changes on spirometry and had an episode of repeated bilateral pneumothorax before and during the follow-up period. All 3 cases showed both interstitial and/or emphysematous changes on HRCT. It is suggested that inhaled indium compounds can cause a new and unique interstitial pulmonary disease.

  8. Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

    KAUST Repository

    Elafandy, Rami T.

    2012-01-01

    Differences in optical and structural properties of indium rich (27), indium gallium nitride (InGaN) self-organized quantum dots (QDs), with red wavelength emission, and the two dimensional underlying wetting layer (WL) are investigated. Temperature dependent micro-photoluminescence (?PL) reveals a decrease in thermal quenching of the QDs integrated intensity compared to that of the WL. This difference in behaviour is due to the 3-D localization of carriers within the QDs preventing them from thermalization to nearby traps causing an increase in the internal quantum efficiency of the device. Excitation power dependent ?PL shows a slower increase of the QDs PL signal compared to the WL PL which is believed to be due to the QDs saturation. © 2012 American Institute of Physics.

  9. Microchemistry in aluminium sheet production

    NARCIS (Netherlands)

    Lok, Z.J.

    2005-01-01

    The production of aluminium sheet alloys from as-cast ingots is a complex process, involving several rolling operations in combination with various thermal heat treatments. Through their influence on the alloy microchemistry and microstructure, these thermomechanical treatments are all aimed at cont

  10. Synchrotron X-Ray Fluorescence Microscopy of Gallium in Bladder Tissue following Gallium Maltolate Administration during Urinary Tract Infection

    OpenAIRE

    Ball, Katherine R.; Sampieri, Francesca; Chirino, Manuel; Hamilton, Don L.; Blyth, Robert I. R.; Sham, Tsun-Kong; Dowling, Patricia M.; Thompson, Julie

    2013-01-01

    A mouse model of cystitis caused by uropathogenic Escherichia coli was used to study the distribution of gallium in bladder tissue following oral administration of gallium maltolate during urinary tract infection. The median concentration of gallium in homogenized bladder tissue from infected mice was 1.93 μg/g after daily administration of gallium maltolate for 5 days. Synchrotron X-ray fluorescence imaging and X-ray absorption spectroscopy of bladder sections confirmed that gallium arrived ...

  11. Separation and Concentration of Indium from Leaching Solution Containing Indium, Antimony and Iron Ions

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Processing conditions of effectively separating indium from the leaching solution of a smelting antimony slag were studied. For the leaching solution containing indium and antimony and iron ions, indium was separated by extracting with HDEHP-kerosine solution, washing antimony and iron ions with oxalic acid solution and stripping indium with a dilute solution of hydrochloric acid. InCl3 solution with purity above 90% is obtained. Indium can be enriched through a circulation of stripping with a dilute HCl solution. The concentration of InCl3 solution is about 25~30 g/L.

  12. Bumblebee pupae contain high levels of aluminium.

    Directory of Open Access Journals (Sweden)

    Christopher Exley

    Full Text Available The causes of declines in bees and other pollinators remains an on-going debate. While recent attention has focussed upon pesticides, other environmental pollutants have largely been ignored. Aluminium is the most significant environmental contaminant of recent times and we speculated that it could be a factor in pollinator decline. Herein we have measured the content of aluminium in bumblebee pupae taken from naturally foraging colonies in the UK. Individual pupae were acid-digested in a microwave oven and their aluminium content determined using transversely heated graphite furnace atomic absorption spectrometry. Pupae were heavily contaminated with aluminium giving values between 13.4 and 193.4 μg/g dry wt. and a mean (SD value of 51.0 (33.0 μg/g dry wt. for the 72 pupae tested. Mean aluminium content was shown to be a significant negative predictor of average pupal weight in colonies. While no other statistically significant relationships were found relating aluminium to bee or colony health, the actual content of aluminium in pupae are extremely high and demonstrate significant exposure to aluminium. Bees rely heavily on cognitive function and aluminium is a known neurotoxin with links, for example, to Alzheimer's disease in humans. The significant contamination of bumblebee pupae by aluminium raises the intriguing spectre of cognitive dysfunction playing a role in their population decline.

  13. Bumblebee pupae contain high levels of aluminium.

    Science.gov (United States)

    Exley, Christopher; Rotheray, Ellen; Goulson, David

    2015-01-01

    The causes of declines in bees and other pollinators remains an on-going debate. While recent attention has focussed upon pesticides, other environmental pollutants have largely been ignored. Aluminium is the most significant environmental contaminant of recent times and we speculated that it could be a factor in pollinator decline. Herein we have measured the content of aluminium in bumblebee pupae taken from naturally foraging colonies in the UK. Individual pupae were acid-digested in a microwave oven and their aluminium content determined using transversely heated graphite furnace atomic absorption spectrometry. Pupae were heavily contaminated with aluminium giving values between 13.4 and 193.4 μg/g dry wt. and a mean (SD) value of 51.0 (33.0) μg/g dry wt. for the 72 pupae tested. Mean aluminium content was shown to be a significant negative predictor of average pupal weight in colonies. While no other statistically significant relationships were found relating aluminium to bee or colony health, the actual content of aluminium in pupae are extremely high and demonstrate significant exposure to aluminium. Bees rely heavily on cognitive function and aluminium is a known neurotoxin with links, for example, to Alzheimer's disease in humans. The significant contamination of bumblebee pupae by aluminium raises the intriguing spectre of cognitive dysfunction playing a role in their population decline.

  14. The surface tension of liquid gallium

    Science.gov (United States)

    Hardy, S. C.

    1985-01-01

    The surface tension of liquid gallium has been measured using the sessile drop technique in an Auger spectrometer. The experimental method is described. The surface tension in mJ/sq m is found to decrease linearly with increasing temperature and may be represented as 708-0.66(T-29.8), where T is the temperature in centigrade. This result is of interest because gallium has been suggested as a model fluid for Marangoni flow experiments. In addition, the surface tension is of technological significance in the processing of compound semiconductors involving gallium.

  15. Recycling process for recovery of gallium from GaN an e-waste of LED industry through ball milling, annealing and leaching

    Energy Technology Data Exchange (ETDEWEB)

    Swain, Basudev, E-mail: swain@iae.re.kr; Mishra, Chinmayee; Kang, Leeseung; Park, Kyung-Soo, E-mail: kspark@iae.re.kr; Lee, Chan Gi; Hong, Hyun Seon, E-mail: hshong@iae.re.kr

    2015-04-15

    Waste dust generated during manufacturing of LED contains significant amounts of gallium and indium, needs suitable treatment and can be an important resource for recovery. The LED industry waste dust contains primarily gallium as GaN. Leaching followed by purification technology is the green and clean technology. To develop treatment and recycling technology of these GaN bearing e-waste, leaching is the primary stage. In our current investigation possible process for treatment and quantitative leaching of gallium and indium from the GaN bearing e-waste or waste of LED industry dust has been developed. To recycle the waste and quantitative leaching of gallium, two different process flow sheets have been proposed. In one, process first the GaN of the waste the LED industry dust was leached at the optimum condition. Subsequently, the leach residue was mixed with Na{sub 2}CO{sub 3}, ball milled followed by annealing, again leached to recover gallium. In the second process, the waste LED industry dust was mixed with Na{sub 2}CO{sub 3}, after ball milling and annealing, followed acidic leaching. Without pretreatment, the gallium leaching was only 4.91 w/w % using 4 M HCl, 100 °C and pulp density of 20 g/L. After mechano-chemical processing, both these processes achieved 73.68 w/w % of gallium leaching at their optimum condition. The developed process can treat and recycle any e-waste containing GaN through ball milling, annealing and leaching. - Highlights: • Simplest process for treatment of GaN an LED industry waste developed. • The process developed recovers gallium from waste LED waste dust. • Thermal analysis and phase properties of GaN to Ga{sub 2}O{sub 3} and GaN to NaGaO{sub 2} revealed. • Solid-state chemistry involved in this process reported. • Quantitative leaching of the GaN was achieved.

  16. Friction Welding of Aluminium and Aluminium Alloys with Steel

    Directory of Open Access Journals (Sweden)

    Andrzej Ambroziak

    2014-01-01

    Full Text Available The paper presents our actual knowledge and experience in joining dissimilar materials with the use of friction welding method. The joints of aluminium and aluminium alloys with the different types of steel were studied. The structural effects occurring during the welding process were described. The mechanical properties using, for example, (i microhardness measurements, (ii tensile tests, (iii bending tests, and (iv shearing tests were determined. In order to obtain high-quality joints the influence of different configurations of the process such as (i changing the geometry of bonding surface, (ii using the interlayer, or (iii heat treatment was analyzed. Finally, the issues related to the selection of optimal parameters of friction welding process were also investigated.

  17. Geochemical Enirchment and Mineralization of Indium

    Institute of Scientific and Technical Information of China (English)

    张乾; 战新志; 等

    1998-01-01

    Indium occurs in a very dispersed manner in nature with enrichment of economic in terest rarely known.The highly dispersed nature of indium,among several other elements,has for a long time retarded our understanding of the regularities that control their mineralization,which in turn has hindered exploitation and application of these elements.Recent studies of ours show that no significant enrichment of indium can be recognized in various types of Pb-Zn sulphide deposits as well as in deposits of copper,iron and manganese,Indium Concentrations in ores of these deposits are generally below 10×10-6.In contrast,however,indium is found to be enriched to a significant extent in cassiterite-sulphide deposits and some tin-rich Pb-Zn polymetallic deposits.The average content of indium in these deposits can be over 100×10-6,and more than 90% of it is concentrated in sphalerite.Generally,these deposits may be considered as large paragenic deposits for indium and ,therefore,there must be some regularities that govern the geochemical enrichment of the so-called "dispersed element" indium.

  18. Study of indium nitride and indium oxynitride band gaps

    Directory of Open Access Journals (Sweden)

    M. Sparvoli

    2013-01-01

    Full Text Available This work shows the study of the optical band gap of indium oxynitride (InNO and indium nitride (InN deposited by magnetron reactive sputtering. InNO shows multi-functionality in electrical and photonic applications, transparency in visible range, wide band gap, high resistivity and low leakage current. The deposition processes were performed in a magnetron sputtering system using a four-inches pure In (99.999% target and nitrogen and oxygen as plasma gases. The pressure was kept constant at 1.33 Pa and the RF power (13.56 MHz constant at 250 W. Three-inches diameter silicon wafer with 370 micrometer thickness and resistivity in the range of 10 ohm-centimeter was used as substrate. The thin films were analyzed by UV-Vis-NIR reflectance, photoluminescence (PL and Hall Effect. The band gap was obtained from Tauc analysis of the reflectance spectra and photoluminescence. The band gap was evaluated for both films: for InNO the value was 2.48 eV and for InN, 1.52 eV. The relative quantities obtained from RBS spectra analysis in InNO sample are 48% O, 12% N, 40% In and in InN sample are 8% O, 65% N, 27% In.

  19. Aluminium in Allergies and Allergen immunotherapy.

    Science.gov (United States)

    Jensen-Jarolim, Erika

    2015-01-01

    Aluminium is a hot topic in the current debate. Exposure occurs due to environmental, dietary and intentional exposure to aluminium, such as in vaccines where it was introduced in 1926. In spite of the fact that it is a typical Th2 adjuvant, aluminium redirects the immune response in systemic allergen immunotherapy (SIT) upon prolonged immunization. SIT in the US, and SLIT in general, are at present non-adjuvanted therapies, but in Europe aluminium is used as adjuvant in most SIT preparations. It enhances the safety of SIT by local deposition of the allergen. Undesired properties of aluminium adjuvants comprise acute and chronic inflammation at the injection site, its Th2 immune stimulatory capacity, its accumulation besides biodistribution in the body. The adjuvant and safety profile of aluminium adjuvants in allergy vaccines are discussed, as well as the need for putting modern delivery systems and adjuvants on the fast track.

  20. Aluminium and nickel in human albumin solutions

    DEFF Research Database (Denmark)

    Gammelgaard, Bente; Sandberg, E

    1989-01-01

    Five different brands of commercially available human albumin solutions for infusion were analysed for their aluminium and nickel contents by atomic absorption spectrometry. The aluminium concentrations ranged from 12 micrograms/l to 1109 micrograms/l and the nickel concentrations ranged from 17...... micrograms/l to 77 micrograms/l. Examination of the aluminium and nickel contents of the constituents for the production of one brand showed too low levels to explain the final contamination of the product. By following the aluminium and nickel concentrations of the same brand during the production...... of a batch of albumin solution, filtration was shown to contribute to contamination, although the largest increase in aluminium as well as nickel concentrations appeared during the bulk concentrating process. To avoid health risks to certain patients, regulations should be established requiring aluminium...

  1. Dietary aluminium Intake Level for Rent Animals in a Primary and Secondary Aluminium Industry Surrounding Area

    OpenAIRE

    2010-01-01

    The study was carried out in an aluminium industry surrounding area on purpose to evaluate dietary aluminium intake level for rent animals originated from fodder and water consumed by them. There were taken feed and water samples in different periods and from increasing distances from industrial platform, determined the aluminium level by atomic spectroscopy and calculated the rations for cattle and poultry. Conclusions: aluminium dietary intake level by ration depends by forage period for st...

  2. Materials synthesis: Two-dimensional gallium nitride

    Science.gov (United States)

    Koratkar, Nikhil A.

    2016-11-01

    Graphene is used as a capping sheet to synthesize 2D gallium nitride by means of migration-enhanced encapsulation growth. This technique may allow the stabilization of 2D materials that are not amenable to synthesis by traditional methods.

  3. Radiochemical separation of gallium by amalgam exchange

    Science.gov (United States)

    Ruch, R.R.

    1969-01-01

    An amalgam-exchange separation of radioactive gallium from a number of interfering radioisotopes has been developed. A dilute (ca. 0.3%) gallium amalgam is agitated with a slightly acidic solution of 72Ga3+ containing concentrations of sodium thiocyanate and either perchlorate or chloride. The amalgam is then removed and the radioactive gallium stripped by agitation with dilute nitric acid. The combined exchange yield of the perchlorate-thiocyanate system is 90??4% and that of the chloride-thiocyanate system is 75??4%. Decontamination yields of most of the 11 interfering isotopes studied were less than 0.02%. The technique is applicable for use with activation analysis for the determination of trace amounts of gallium. ?? 1969.

  4. Toxicity of aluminium on five aquatic invertebrates; Aluminiums toksisitet paa 5 akvatiske invertebrater

    Energy Technology Data Exchange (ETDEWEB)

    Moe, J. [Oslo Univ. (Norway)

    1996-01-01

    The conference paper deals with the experiments done by investigating the effects from the toxicity of aluminium on aquatic invertebrates. The aim of the experiments was to compare the toxicity of unstable aluminium compounds with stable forms of aluminium. 8 refs., 2 figs., 2 tabs.

  5. A biogeochemical cycle for aluminium?

    Science.gov (United States)

    Exley, Christopher

    2003-09-15

    The elaboration of biogeochemical cycles for elements which are known to be essential for life has enabled a broad appreciation of the homeostatic mechanisms which underlie element essentiality. In particular they can be used effectively to identify any part played by human activities in element cycling and to predict how such activities might impact upon the lithospheric and biospheric availability of an element in the future. The same criteria were the driving force behind the construction of a biogeochemical cycle for aluminium, a non-essential element which is a known ecotoxicant and a suspected health risk in humans. The purpose of this exercise was to examine the concept of a biogeochemical cycle for aluminium and not to review the biogeochemistry of this element. The cycle as presented is rudimentary and qualitative though, even in this nascent form, it is informative and predictive and, for these reasons alone, it is deserving of future quantification. A fully fledged biogeochemical cycle for aluminium should explain the biospheric abundance of this element and whether we should expect its (continued) active involvement in biochemical evolution.

  6. Gallium Nitride Nanowires and Heterostructures: Toward Color-Tunable and White-Light Sources.

    Science.gov (United States)

    Kuykendall, Tevye R; Schwartzberg, Adam M; Aloni, Shaul

    2015-10-14

    Gallium-nitride-based light-emitting diodes have enabled the commercialization of efficient solid-state lighting devices. Nonplanar nanomaterial architectures, such as nanowires and nanowire-based heterostructures, have the potential to significantly improve the performance of light-emitting devices through defect reduction, strain relaxation, and increased junction area. In addition, relaxation of internal strain caused by indium incorporation will facilitate pushing the emission wavelength into the red. This could eliminate inefficient phosphor conversion and enable color-tunable emission or white-light emission by combining blue, green, and red sources. Utilizing the waveguiding modes of the individual nanowires will further enhance light emission, and the properties of photonic structures formed by nanowire arrays can be implemented to improve light extraction. Recent advances in synthetic methods leading to better control over GaN and InGaN nanowire synthesis are described along with new concept devices leading to efficient white-light emission.

  7. Design and Optimization of Copper Indium Gallium Selenide Thin Film Solar Cells

    Science.gov (United States)

    2015-09-01

    pair to generate power , a photon must displace a valence electron from a bond inside of the crystalline structure of the solar cell. The energy ...7 1. Solar Spectrum and Wavelength Energy ....................................7 2. Photogeneration of Electron Hole Pairs...Expeditionary Energy Office GREENS Ground Renewable Expeditionary Energy System NPS Naval Postgraduate School SPACES Solar Portable Alternative

  8. Efficiency droop in indium gallium nitride light emitters: An introduction to photon quenching processes

    Science.gov (United States)

    Sarkissian, Raymond

    This thesis contains work from two separate projects, a study of the efficiency of light emitting diodes, and a tapered-fiber approach to photonic crystal integrated photonics. The first part of this thesis describes an experimental investigation of the quantum efficiency of InGaN-based light emitters. Blue and Green LEDs that utilize InGaN quantum wells for their active medium suffer from a reduction in efficiency with increasing bias. This phenomenon is called efficiency droop. In this thesis experimental evidence for significant quenching of photon population in InGaN is presented and its relevance to the efficiency droop problem in InGaN-based light emitting structures is discussed. An equilibrium rate equation model is set up to demonstrate that radiative efficiency for this loss mechanism not only has a similar dependence on carrier density as Auger recombination process, but it also possesses the right order of magnitude making it difficult to distinguish between the two and possibly leading to errors in interpretation. The impact of photon quenching processes on device performance is emphasized by demonstrating loss of efficiency for spectral regions where there is experimental evidence for photon quenching. We have observed this phenomenon for both c-plane and m-plane light emitting structures. Both structures exhibit droop-like behavior for spectral regions where there is evidence for photon quenching. We have also observed and characterized the dynamical Stark effect for an m-plane light emitter considered in this manuscript. Our results revealed localization centers with a corresponding band-edge energy of 388nm and an excitonic binding energy of 17.81mev. Furthermore, fabrication of a photonic crystal waveguide fiber taper coupler is demonstrated with a peak coupling efficiency of 97 %. All four ports of the device are accessible providing an opportunity for investigation of simultaneous interaction of different light sources inside the photonic crystal cavity. A numerical model is set forth to analyze such devices with an excellent agreement with the experimental data. One important result of that theory is the ability to experimentally extract the phase contribution of optical resonators that employ periodic structures such as photonic crystal cavities. This device has also been used to demonstrate all-optical nonlinear shift and bleaching of cavity resonances via non-degenerate two photon absorption, non-degenerate Kerr mechanism, free carrier absorption, and free carrier plasma effects. As the response time of two photon processes are very fast, about 10 fs, this device can be used in ultrafast low energy all optical switching applications.

  9. Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

    Science.gov (United States)

    Lee, Heesoo; Chang, Ki Soo; Tak, Young Jun; Jung, Tae Soo; Park, Jeong Woo; Kim, Won-Gi; Chung, Jusung; Jeong, Chan Bae; Kim, Hyun Jae

    2016-10-01

    A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully.

  10. Impact of secondary barriers on copper-indium-gallium-selenide solar-cell operation

    Science.gov (United States)

    Pudov, Alexei O.

    Thin-film solar cells based on CuInSe2 (CIS) absorber with a band gap of Eg = 1.0 eV and also based on CuIn1-x GaxSe2 (CIGS) alloy absorbers with a band-gap range of Eg = 1.0--1.67 eV are investigated in this work. Intermediate "buffer" semiconductor layers in p-n junctions of CIGS solar cells often improve photodiode properties of the devices. The primary goal of the thesis is to study secondary barriers in the conduction band at the buffer/absorber interface, which may limit current transport and thus reduce the efficiency of the solar cells. The secondary goal is to explore alternative wide-bandgap buffers in CIGS cell structures. CIGS cells with standard CdS buffer layers, and alternative ZnS(O,OH) and InS(O,OH) buffer layers were studied. CdS/CuIn1-xGaxSe2 solar cells with variable Ga content have a range of conduction-band offsets (DeltaEc) in the junction from moderately positive (spike offsets) in CdS/CuInSe2 to moderately negative (cliff offsets) in CdS/CuGaSe 2. Moderate conduction-band spikes in CdS/CIS and low-Ga CdS/CIGS are expected to cause distortions in diode current-voltage (J-V) curves of such solar cells under "red" illumination (hnu < Eg(buffer)); no J-V distortions are expected for high-Ga CdS/CIGS with cliff offsets. These predictions were confirmed in experiments: the distortions were absent for cells with Eg above 1.2--1.3 eV, at which CdS/CIGS DeltaE c is near zero. Experiments and numerical simulations showed that one approach to reduce secondary barriers and J-V distortions in low-Ga high-spike cells is to thin the buffer layer(s). Blue photons (hnu above Eg(buffer)) in the solar spectrum induce photoconductivity in the otherwise compensated buffers, which also results in lowering of the secondary barriers. It was shown that CIGS cells with CdS, InS(O,OH), and ZnS(O,OH) buffers have a similar response to "blue" photons: J-V distortion, if present under red light, is reduced or entirely disappears with blue-light exposure within minutes. The distortion re-appearance without blue light is the order of a thousand times slower. Using wider-gap buffers, such as InS(O,OH) and ZnS(O,OH), was shown to produce higher photocurrents in solar cells. This photocurrent improvement is a central direction in the effort of further increasing efficiencies of thin-film solar cells.

  11. Surface preparation for ALD of High-k dielectrics on indium gallium arsenide

    Science.gov (United States)

    Melitz, Wilhelm

    The key for a successful gate-first process is when subsequent processing steps cannot degrade the semiconductor, the dielectric, or the oxide-semiconductor interfaces. For silicon, the only commercial ALD high-k fabrication process, which avoids processing induced damage, is a replacement gate process (a type of gate-last process). While preparing silicon for gate-last processing is straightforward, the key to a gate-last process for III-V semiconductors is the order and cleanliness of the III-V channel prior to dielectric deposition. Aggressive oxide thickness reduction (equivalent oxide thickness, or EOT, scaling) is needed to fabricate small gate length devices with small subthreshold swings. Furthermore, aggressive EOT scaling requires a very high uniform ALD nucleation density, with no pinholes due to surface contaminants. The key barrier to solving a very practical problem is a surface chemistry challenge: develop a chemical process which removes nearly all air induced defects and contaminants and leaves the III-V surface flat and electrically active for high nucleation density ALD gate oxide deposition, which unpins the Fermi level. The following study uses scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) to observe the removal of the oxide layer and restoration of the clean InGaAs surface reconstruction with atomic hydrogen cleaning, allowing for a gate-last or replacement-gate process. Along with surface cleaning STM and STS was used to characterize the initial passivation of InGaAs surfaces via ALD of trimethyl aluminum (TMA). The substrate temperature and initial surface reconstruction was critical to forming an unpinned passivation layer with a high nucleation density. A method was developed to use Kelvin probe force microscopy (KPFM) as a tool for insightful feedback on the electrostatics of scaled MOSFET devices. KPFM is a unique technique for providing two-dimensional potential profiles inside a working device. A procedure is described to obtain high-resolution KPFM results on ultra-high vacuum (UHV) cleaved III-V MOSCAPs.

  12. Gallium-doped indium oxide nanoleaves: Structural characterization, growth mechanism and optical properties

    Science.gov (United States)

    Liu, Lizhu; Chen, Yiqing; Guo, Linliang; Guo, Taibo; Zhu, Yunqing; Su, Yong; Jia, Chong; Wei, Meiqin; Cheng, Yinfen

    2011-11-01

    The novel two-dimensional (2-D) Ga-doped In2O3 nanoleaves are synthesized by a simple one-step carbonthermal evaporation method using Cu-Sn alloy as the substrates. Two basic parts construct this leaf-like nanostructure: a long central trunk and two tapered nanoribbons in symmetric distribution in relation to the trunk. The Ga-In-O alloy particles are located at or close to the tips of the central trunks and serve as catalysts for the central trunk growth by the self-catalytic vapor-liquid-solid (VLS) mechanism. And the homoepitaxial growth of tapered nanoribbon on the surface of the central trunk can be explained by vapor-solid (VS) mechanism. The room-temperature photoluminescence (PL) measurement of this nanoscaled Ga-doped In2O3 transparent conducting oxide (TCO) detected two blue peaks located at 432 nm and 481 nm, respectively, which can be used by Ru-based dye and indicates potential application in dye-sensitized solar cells (DSSCs). The successful preparation of this novel 2-D Ga-doped In2O3 nanoleaves not only enriches the synthesis of TCO materials, but also provides new blocks in future architecture of functional nano-devices.

  13. Long-term performance analysis of copper indium gallium selenide thin-film photovoltaic modules

    Science.gov (United States)

    Kaul, Ashwani; Pethe, Shirish A.; Dhere, Neelkanth G.

    2012-01-01

    Current accelerated qualification tests of photovoltaic (PV) modules mostly assist in avoiding premature failures but can neither duplicate changes occurring in the field nor predict useful product lifetime. Therefore, outdoor monitoring of field-deployed thin-film PV modules was undertaken at FSEC with the goal of assessing their performance in hot and humid climate under high system-voltage operation. Significant and comparable degradation rate of -5.13±1.53% and -4.5±1.46% per year was found using PVUSA type regression analysis for the positive and negative strings, respectively of 40W glass-to-glass Cu-In-Ga-Se (CIGS) thin-film PV modules in the hot and humid climate of Florida. Using the current-voltage measurements, it was found that the performance degradation within the PV array was mainly due to a few (8% to 12%) modules that had substantially higher degradation. The remaining modules within the array continued to show reasonable performance (>96% of the rated power after ˜ four years).

  14. A customizable commercial miniaturized 320×256 indium gallium arsenide shortwave infrared camera

    Science.gov (United States)

    Huang, Shih-Che; O'Grady, Matthew; Groppe, Joseph V.; Ettenberg, Martin H.; Brubaker, Robert M.

    2004-10-01

    The design and performance of a commercial short-wave-infrared (SWIR) InGaAs microcamera engine is presented. The 0.9-to-1.7 micron SWIR imaging system consists of a room-temperature-TEC-stabilized, 320x256 (25 μm pitch) InGaAs focal plane array (FPA) and a high-performance, highly customizable image-processing set of electronics. The detectivity, D*, of the system is greater than 1013 cm-√Hz/W at 1.55 μm, and this sensitivity may be adjusted in real-time over 100 dB. It features snapshot-mode integration with a minimum exposure time of 130 μs. The digital video processor provides real time pixel-to-pixel, 2-point dark-current subtraction and non-uniformity compensation along with defective-pixel substitution. Other features include automatic gain control (AGC), gamma correction, 7 preset configurations, adjustable exposure time, external triggering, and windowing. The windowing feature is highly flexible; the region of interest (ROI) may be placed anywhere on the imager and can be varied at will. Windowing allows for high-speed readout enabling such applications as target acquisition and tracking; for example, a 32x32 ROI window may be read out at over 3500 frames per second (fps). Output video is provided as EIA170-compatible analog, or as 12-bit CameraLink-compatible digital. All the above features are accomplished in a small volume < 28 cm3, weight < 70 g, and with low power consumption < 1.3 W at room temperature using this new microcamera engine. Video processing is based on a field-programmable gate array (FPGA) platform with a soft-embedded processor that allows for ease of integration/addition of customer-specific algorithms, processes, or design requirements. The camera was developed with the high-performance, space-restricted, power-conscious application in mind, such as robotic or UAV deployment.

  15. Synthesis of colloidal nanoscaled copper-indium-gallium-selenide (CIGS) particles for photovoltaic applications.

    Science.gov (United States)

    Mousavi, S H; Müller, T S; de Oliveira, P W

    2012-09-15

    In this work, Cu(In,Ga)Se(2) (CIGS) nanoparticles were synthesized using a wet chemical method. The method is based on a non-vacuum thermal process that does not use selenization. The effects of temperature, source materials, and growth conditions on the phase and particle size were investigated. X-ray diffraction results confirm the formation of a tetragonal CIGS structure as the main phase with the purity more than 99% obtained by energy-dispersive X-ray spectroscopy (EDX). The morphology and size of the samples were investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Using these methods, 20-80nm particles were obtained. Through measurements of the absorption spectra of CIGS nanoparticles, the band gap of the synthesized material was determined to be about 1.44eV, which corresponds to an acceptable wavelength region for absorber layers in solar cells.

  16. Defect States in Copper Indium Gallium Selenide Solar Cells from Two-Wavelength Excitation Photoluminescence Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, Soren A.; Dippo, Patricia; Mansfield, Lorelle M.; Glynn, Stephen; Kuciauskas, Darius

    2016-11-21

    We use two-wavelength excitation photoluminescence spectroscopy to probe defect states in CIGS thin films. Above-Eg excitation is combined with a tunable IR bias light that modulates the population of the defect states. We find that IR illumination in the range of 1400-2000 nm (0.62-0.89 eV) causes a reduction of the PL intensity, the magnitude of which scales linearly with IR power. Further, KF post deposition treatment has only a modest influence on the effect of the IR excitation. Initial data suggest that we have developed an optical characterization tool for band-gap defect states.

  17. Design and Optimization of Copper Indium Gallium Selenide Solar Cells for Lightweight Battlefield Application

    Science.gov (United States)

    2014-06-01

    those of the author and do not reflect the official policy or position of the Department of Defense or the U.S. Government. IRB Protocol number ____N...Matrix Flatpanel Displays and Devices, Kyoto , Japan, 2012, pp. 67–70. [23] R. Yang, Z. Bai, D. Wang, and D. Wang, “High efficient thin film CdTe solar

  18. Electroluminescence Studies on Longwavelength Indium Arsenide Quantum Dot Microcavities Grown on Gallium Arsenide

    Science.gov (United States)

    2011-12-01

    been calculated by solving the three dimensional effective mass single particle Schrodinger equation and are shown in Figure 2.19 [23...particle Schrodinger equation and is shown in Figure 2.20 for various sized pyramidal dots. Over a limited range of sizes the transition energy

  19. Ellipsometry study of process deposition of amorphous Indium Gallium Zinc Oxide sputtered thin films

    Energy Technology Data Exchange (ETDEWEB)

    Talagrand, C., E-mail: talagrand@emse.fr [Ecole des Mines de Saint-Etienne CMP-GC, Dept PS2, Gardanne, 880 route de Mimet (France); Boddaert, X. [Ecole des Mines de Saint-Etienne CMP-GC, Dept PS2, Gardanne, 880 route de Mimet (France); Selmeczi, D.G.; Defranoux, C. [Semilab Semiconductor Physics Laboratory Co. Ltd., Budapest, 1117 (Hungary); Collot, P. [Ecole Nationale Supérieure d' Arts et Métiers ParisTech, Aix-en-Provence, 2 cours des Arts et Métiers (France)

    2015-09-01

    This paper reports on an InGaZnO optical study by spectrometric ellipsometry. First of all, the fitting results of different models and different structures are analysed to choose the most appropriate model. The Tauc–Lorentz model is suitable for thickness measurements but a more complex model allows the refractive index and extinction coefficient to be extracted more accurately. Secondly, different InGaZnO process depositions are carried out in order to investigate stability, influence of deposition time and uniformity. Films present satisfactory optical stability over time. InGaZnO optical property evolution as a function of deposition time is related to an increase in temperature. To understand the behaviour of uniformity, mapping measurements are correlated to thin film resistivity. Results show that temperature and resputtering are the two phenomena that affect IGZO uniformity. - Highlights: • Model and structure are investigated to fit IGZO ellipsometric angles. • Maximum refractive index rises with substrate temperature and thus deposition time. • Resputtering leads to inhomogeneity in IGZO electrical and optical properties.

  20. X-Ray Diffraction Analysis on Gallium-Indium Interdiffusion in Quantum Dot Superlattices

    Institute of Scientific and Technical Information of China (English)

    汪辉; 封松林; 徐世杰; 李晴

    2001-01-01

    Thermal-induced interdiffusion in InAs/GaAs quantum dot superlattices is studied by high-resolution x-raydiffraction rocking curve and photoluminescence techniques. With increasing annealing temperatures, up to300meV a blueshift of the emission peak position and down to 16.6meV a narrowing of the line width are foundin the photoluminescence spectra, and respective intensity of the higher-order satellite peaks to lower-order onesin the x-ray rocking curves decreases. Dynamical theory is employed to simulate the measured x-ray diffractiondata. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness and stress variations caused by interdiffusion are taken into account. It is found that the significantIn-Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The estimated diffusion coefficient is1.8 × 10-17cm2.s-1 at 650 ℃, 3.2 × 10-17cm2·s-1 at 750 ℃, and 1.2 × 10-14 cm2.s-1 at 850℃.

  1. Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Ultraviolet Illumination

    Science.gov (United States)

    Lan-Feng, Tang; Hai, Lu; Fang-Fang, Ren; Dong, Zhou; Rong, Zhang; You-Dou, Zheng; Xiao-Ming, Huang

    2016-03-01

    Not Available Supported by the Key Industrial R&D Program of Jiangsu Province under Grand No BE2015155, the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the Fundamental Research Funds for the Central Universities under Grant No 021014380033.

  2. Thermochemistry and phase diagram studies in the copper(indium,gallium)selenium system

    Science.gov (United States)

    Ider, Muhsin

    Polycrystalline Cu(In,Ga)Se2 and related semiconductors show great potential as alternative materials in production of high efficiency solar cells. This dissertation reports the experimental determination of Gibbs energy changes and phase diagram calculations for selected sections of the Cu-Ga-In-Se system. The Gibbs energy changes were measured with solid-state electrochemical cells and this data along with selected literature data were assessed and model parameters suggested. The homogeneity range of beta-Cu2-xSe was measured by coulometric titration and the thermodynamic properties for defect species estimated. The composition difference between the Se-rich and the Cu-rich boundaries was measured at 900K. A defect model was developed based on vacancy formation on the Cu sublattice. The gas phase equilibrium data for Cu-Se system and the results of a recent assessment of selenium unary system were used to predict defect concentrations. A thermodynamic description of the Cu2Se-In2Se 3 was obtained by optimization of the available phase equilibrium and thermodynamic information along with the direct results of EMF experiments. The Gibbs energy of formation of alpha-CuInSe2 was directly measured by a solid oxide galvanic cell experiment. The transformation enthalpy and Gibbs energy data for CuIn3Se5 and CuIn5Se 8 were estimated. The Redlich-Kister model with a 3-coefficient expression was employed to define the Gibbs energy of the liquid phase. The intermediate beta-CuIn 3Se5 and gamma-CuIn5Se8 phases were modeled with a 2-coefficient expansion of the Redlich-Kister model. The alpha and delta modifications of CuInSe2 phases were modeled with a specific sublattice model. A reasonable agreement between the model calculated values and the thermodynamic phase equilibrium data was achieved. The thermochemistry and phase diagram of GaSe system was critically studied. The activity of Ga was measured along the liquidus between 800--1000K. Selected invariant phase transition temperatures were measured and transition enthalpies were calculated from the EMF measurements. A self-consistent thermodynamic data was obtained. The associated and sublattice models were used to represent the Gibbs energy of the liquid and alpha-Ga2Se3 phases, respectively. The Gibbs energy of formation of CuGaSe2 was measured by an EMT experiment. The phase diagram of Cu-Ga system was calculated and the liquid phase Ga activity measurements was measured for 2 Ga rich compositions.

  3. Type-II indium arsenide/gallium antimonide superlattices for infrared detectors

    Science.gov (United States)

    Mohseni, Hooman

    In this work, the unique properties of type-II InAs/GaSb heterojunctions were utilized for the realization of novel infrared photodetectors with higher operating temperature, detectivity and uniformity than the commonly available infrared detectors. This effort was concentrated on two major devices: uncooled infrared detectors in the long wavelength infrared (LWIR) range, and cooled devices in the very long wavelength infrared (VLWIR) range. Uncooled infrared (IR) detectors are required for low-cost, lightweight sensor systems that have many industrial and medical applications. Commercially available uncooled IR sensors use ferroelectric or microbolometer detectors. These sensors are inherently slow and cannot detect rapid signal changes needed for high-speed infrared systems. Some of the applications which require a fast detector (tau LIDARs. Although photon detectors have frequency responses in the megahertz range, their high temperature detectivity is severely degraded due to high Auger recombination rates. Bandgap engineering was used in order to suppress Auger recombination at room temperature in type-II superlattices. Our experimental results demonstrated nearly one order of magnitude lower Auger recombination rate at room temperature in these type-II superlattices compared to typical intrinsic detectors, such as HgCdTe, with similar bandgap. Uncooled detectors based on the engineered superlattices showed a detectivity of 1.3 x 108g cmHz 1/2/W at 11 Et m, which is comparable to microbolometers. However, the measured response time of the detectors was more than five orders of magnitude faster than microbolometers. In parallel, devices for operation in the VLWIR were developed. High-performance infrared detectors with cutoff wavelength above 14 mum are highly needed for many space-based applications. Commonly used detectors are extrinsic silicon and HgCdTe. However, the former has to be cooled below 10K, and the latter do not have good uniformity in the VLWIR range. We demonstrated high-performance type-II superlattice photodiodes with cutoff wavelength up to 25 mum and excellent bandgap uniformity over a three-inch wafer area. Devices with a 50% cutoff wavelength of 16 mum showed a nearly 50% internal quantum efficiency and background limited infrared photodetector (BLIP) performance at T = 60 K for the first time.

  4. Effect of X-radiation on single crystals of gallium and indium monoselenides

    Energy Technology Data Exchange (ETDEWEB)

    Akopyan, R.A.; Zhuravlev, V.M. (Moskovskij Inst. Ehlektronnoj Tekhniki (USSR))

    1983-06-01

    InSe and GaSe monocrystals doped with lead reveal considerable sensitivity to 0.1-0.5 A x radiation. The relation well describing the effect of x radiation on these single crystals is proposed. The prevailing mechanism of the effect is photoelectric absorption on k shells of component atoms.

  5. Temperature and baric dependence of nuclear quadruple resonance spectra in indium and gallium monoselenides

    Science.gov (United States)

    Khandozhko, Victor; Raranskii, Nikolai; Balazjuk, Vitaly; Samila, Andriy; Kovalyuk, Zahar

    2013-12-01

    Pulsed radiospectroscopy method has been used to study nuclear quadruple resonance (NQR) spectra of 69Ga and 115In isotopes in the layered semiconductors GaSe and InSe. It has been found that in GaSe and InSe there is a considerable temperature dependence of NQR frequency which in the temperature range of 250 to 390 K is practically linear with conversion slope 1.54 kHz/degree for 69Ga and 2.35 kHz/degree for 115In. In the same crystals the effect of uniaxial pressure on NQR spectra applied along the optical axis с up to the values of 500 kg/сm2 has been studied. A strong attenuation of NQR spectra intensity with increase in pressure on layered crystal package has been established. The unvaried multiplicity of resonance spectra indicates the absence of structural transformations in these layered crystals over the investigated range of temperatures and pressures.

  6. The application of the photoacoustic transmittance oscillations for determining elastic constants in gallium and indium selenides

    Science.gov (United States)

    Ferrer, Ch.; Segura, A.; Andrés, M. V.; Muñoz, V.; Pellicer, J.

    1996-03-01

    Transmittance periodic oscillations are observed in GaSe and InSe on excitation with optical pulses. Such oscillations are explained in terms of photoacoustic generation of dilatational waves, which become resonant within the crystal. Spectral analysis of those oscillations in samples of different thickness has led to an accurate determination of the longitudinal acoustic-wave velocity along the crystallographic axis c.

  7. Tunneling phenomenon of amorphous indium-gallium-zinc-oxide thin film transistors for flexible display

    Science.gov (United States)

    Oh, Teresa

    2015-09-01

    It is an importance to understand the contact mechanism at interfaces between dielectric and channel materials to improve the performance of thin film transistors. Oxide semiconductor has proposed as promising candidate for transparent flexible application, whose development requires greater understand and control of their electron contacts. The performance of IGZO/SiOC TFTs depended on properties of SiOC as a gate insulator. SiOC exhibited a range of systematic interface electronic structure that can be understood at the atomic scale to provide a comprehensive feature of Schottky barrier and Ohmic contacts. The conduction of TFTs prepared on low polar SiOC was progressed by the tunneling behavior. The ambipolar transfer characteristics in tunneling transistors were done by a spontaneous potential barrier of SiOC such as the Schottky barrier (SB) in a short range and Ohmic contact in a long range. TFTs on SiOC with Poole-Frenkel contact as high SB operated under the threshold voltage, and then became free from the threshold voltage shift. However, the TFTs on high polar SiOC with Ohmic contact in a short range was also showed the unipolar characteristics by the trapping behavior as well as instability owing to the operation at high drain bias voltage over the threshold voltage. [Figure not available: see fulltext.

  8. Control of gallium incorporation in sol–gel derived CuIn{sub (1−x)}Ga{sub x}S{sub 2} thin films for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Bourlier, Yoan [Institut de Recherche sur les Composants logiciels et matériels pour l’Information et la Communication Avancée (IRCICA), CNRS USR 3380, Université Lille 1, 50 avenue Halley, 59655 Villeneuve d’Ascq CEDEX (France); Cristini Robbe, Odile [Institut de Recherche sur les Composants logiciels et matériels pour l’Information et la Communication Avancée (IRCICA), CNRS USR 3380, Université Lille 1, 50 avenue Halley, 59655 Villeneuve d’Ascq CEDEX (France); Laboratoire de Physique des Lasers, Atomes et Molécules (PhLAM), CNRS UMR 8523, Université Lille, 59655 Villeneuve d’Ascq CEDEX (France); Lethien, Christophe [Institut de Recherche sur les Composants logiciels et matériels pour l’Information et la Communication Avancée (IRCICA), CNRS USR 3380, Université Lille 1, 50 avenue Halley, 59655 Villeneuve d’Ascq CEDEX (France); Laboratoire de Physique des Lasers, Atomes et Molécules (PhLAM), CNRS UMR 8523, Université Lille, 59655 Villeneuve d’Ascq CEDEX (France); Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), CNRS UMR 8520, Avenue Poincaré, 59652 Villeneuve d’Ascq CEDEX (France); and others

    2015-10-15

    Highlights: • CuIn{sub (1−x)}Ga{sub x}S{sub 2} thin films were prepared by sol–gel process. • Evolution of lattice parameters is characteristic of a solid solution. • Optical band gap was found to be linearly dependent on the gallium rate. - Abstract: In this paper, we report the elaboration of Cu(In,Ga)S{sub 2} chalcopyrite thin films via a sol–gel process. To reach this aim, solutions containing copper, indium and gallium complexes were prepared. These solutions were thereafter spin-coated onto the soda lime glass substrates and calcined, leading to metallic oxides thin films. Expected chalcopyrite films were finally obtained by sulfurization of oxides layers using a sulfur atmosphere at 500 °C. The rate of gallium incorporation was studied both at the solutions synthesis step and at the thin films sulfurization process. Elemental and X-ray diffraction (XRD) analyses have shown the efficiency of monoethanolamine used as a complexing agent for the preparation of CuIn{sub (1−x)}Ga{sub x}S{sub 2} thin layers. Moreover, the replacement of diethanolamine by monoethanolamine has permitted the substitution of indium by isovalent gallium from x = 0 to x = 0.4 and prevented the precipitation of copper derivatives. XRD analyses of sulfurized thin films CuIn{sub (1−x)}Ga{sub x}S{sub 2,} clearly indicated that the increasing rate of gallium induced a shift of XRD peaks, revealing an evolution of the lattice parameter in the chalcopyrite structure. These results were confirmed by Raman analyses. Moreover, the optical band gap was also found to be linearly dependent upon the gallium rate incorporated within the thin films: it varies from 1.47 eV for x = 0 to 1.63 eV for x = 0.4.

  9. Partial molar volumes of aluminium chloride, aluminium sulphate and aluminium nitrate in water-rich binary aqueous mixtures of tetrahydrofuran

    Directory of Open Access Journals (Sweden)

    R. C. Thakur

    2014-12-01

    Full Text Available Partial molar volumes of aluminium chloride, aluminium sulphate and aluminium nitrate have been determined in water rich binary aqueous mixtures of tetrahydrofuran (5, 10, 15, 20% by weight of tetrahydrofuran with the help of density measurements. The density measurements were made by using Ward and Millero method and results have been analysed by Masson’s equation and interpreted in terms of ion-ion or ion –solvent interactions. The partial molar volumes vary with temperature as a power series of temperature. Structure making or breaking capacities of aluminium salts have been inferred from the sign à2/ Φvo p i.e second derivative of partial molar volume with respect to temperature at constant pressure. The aluminium salts have been found as structure breakers in binary aqueous mixture of tetrahydrofuran.

  10. Gallium-67 uptake in cutaneous lesions of mycosis fungoides

    Energy Technology Data Exchange (ETDEWEB)

    Nishimi, L.; Chen, D.C.; Ansari, A.N.; Siegel, M.E.

    1988-02-01

    The literature on gallium imaging in mycosis fungoides is limited and conflicting. A case of mycosis fungoides with increased uptake of Ga-67 in clinically noninfected skin lesions is reported. The literature regarding mycosis fungoides and gallium imaging is reviewed.

  11. Novel Synthesis of Aluminium Oxide Nanofibers

    Science.gov (United States)

    2001-11-01

    UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADP012177 TITLE: Novel Synthesis of Aluminium Oxide Nanofibers DISTRIBUTION...ADP012174 thru ADP012259 UNCLASSIFIED Mat. Res. Soc. Symp. Proc. Vol. 703 © 2002 Materials Research Society V1.8 Novel Synthesis of Aluminium Oxide Nanofibers

  12. Preparation of aluminium lakes by electrocoagulation

    Directory of Open Access Journals (Sweden)

    Prapai Pradabkham

    2008-07-01

    Full Text Available Aluminium lakes have been prepared by electrocoagulation employing aluminium as electrodes. The electrocoagulation is conducted in an aqueous alcoholic solution and is completed within one hour. The dye content in the lake ranges approximately between 4-32%.

  13. Lactobacillus plantarum CCFM639 alleviates aluminium toxicity.

    Science.gov (United States)

    Yu, Leilei; Zhai, Qixiao; Liu, Xiaoming; Wang, Gang; Zhang, Qiuxiang; Zhao, Jianxin; Narbad, Arjan; Zhang, Hao; Tian, Fengwei; Chen, Wei

    2016-02-01

    Aluminium (Al) is the most abundant metal in the earth's crust. Al exposure can cause a variety of adverse physiological effects in humans and animals. Our aim was to demonstrate that specific probiotic bacteria can play a special physiologically functional role in protection against Al toxicity in mice. Thirty strains of lactic acid bacteria (LAB) were tested for their aluminium-binding ability, aluminium tolerance, their antioxidative capacity, and their ability to survive the exposure to artificial gastrointestinal (GI) juices. Lactobacillus plantarum CCFM639 was selected for animal experiments because of its excellent performance in vitro. Forty mice were divided into four groups: control, Al only, Al plus CCFM639, and Al plus deferiprone (DFP). CCFM639 was administered at 10(9) CFU once daily for 10 days, followed by a single oral dose of aluminium chloride hexahydrate at 5.14 mg aluminium (LD50) for each mouse. The results showed that CCFM639 treatment led to a significant reduction in the mortality rates with corresponding decrease in intestinal aluminium absorption and in accumulation of aluminium in the tissues and amelioration of hepatic histopathological damage. This probiotic treatment also resulted in alleviation of hepatic, renal, and cerebral oxidative stress. The treatment of L. plantarum CCFM639 has potential as a therapeutic dietary strategy against acute aluminium toxicity.

  14. Locale instabiliteit van aluminium constructiedelen bij brand

    NARCIS (Netherlands)

    Maljaars, J.; Soetens, F.

    2006-01-01

    Dragende constructiedelen van aluminium legeringen, zoals toegepast in bouwconstructies maar ook in schepen en offshore platforms, moeten zodanig ontworpen worden dat mensen veilig kunnen vluchten als er brand uitbreekt. Door de lage smelttemperatuur van aluminium vraagt brand de nodige aandacht in

  15. Rapidly solidified aluminium for optical applications

    NARCIS (Netherlands)

    Gubbels, G.P.H.; Venrooy, B.W.H. van; Bosch, A.J.; Senden, R.

    2008-01-01

    This paper present the results of a diamond turning study of a rapidly solidified aluminium 6061 alloy grade, known as RSA6061. It is shown that this small grain material can be diamond turned to smaller roughness values than standard AA6061 aluminium grades. Also, the results are nearly as good as

  16. Acoustic properties of aluminium foams

    Directory of Open Access Journals (Sweden)

    García, L. E.

    2008-09-01

    Full Text Available The article discusses normal incidence sound absorption by aluminium foam manufactured with powder metallurgy technology. Aluminium foams with different surface morphologies were obtained by varying the type of precursor and adding filler materials during the foaming process. The sound absorption coefficients found for these aluminium foams were compared to the coefficient for commercial foams marketed under the name ALPORAS. The effect of foam thickness on the absorption coefficient was studied for each sample prepared. The combination of good acoustic and mechanical properties makes aluminium foams particularly attractive products. The study included an analysis of the effect of 2-, 5- and 10-cm air gaps on the sound absorption coefficient. The results showed that such gaps, which are routinely used in construction to reduce the reverberation period in indoor premises, raised the low frequency absorption coefficient significantly. This increase was found to depend on aluminium foam density and thickness and the depth of the air gap. In this same line, we have investigated the absorption coefficient of the aluminium foams combined with a mineral fiber panel.Se presenta un estudio del coeficiente de absorción acústica a incidencia normal de espumas de aluminio fabricadas mediante la técnica pulvimetalúrgica. Se fabricaron espumas de aluminio de distinta morfología superficial variando el tipo de precursor y usando materiales de relleno durante el proceso de espumación. Se muestra un estudio comparativo del coeficiente de absorción acústica de las espumas de aluminio fabricadas y las espumas comerciales conocidas como ALPORAS. Para cada muestra fabricada se estudió la influencia del espesor sobre el valor del coeficiente de absorción.El atractivo de las espumas de aluminio radica en que en ellas se combinan interesantes propiedades acústicas y mecánicas. Se analizó el efecto de una cámara de aire de 2, 5 y 10 cm de anchura sobre el

  17. Preparation and Characterization of the Binary Group 13 Azides M(N3)3 and M(N3)3’CH3CN (M = Ga, In, TI), [Ga(N3)5](2-), and [M(N3)6](3-) (M = In, TI) (Preprint)

    Science.gov (United States)

    2011-05-24

    semiconductor and optoelectronic applications. Although most of these efforts were devoted to gallium azides, aluminium and indium azides were also...their usefulness for semiconductor and optoelectronic applications. Although most of these efforts were devoted to gallium azides,[20,21] aluminium and...4253 -1471 44 H(22) 3736 3825 -1326 52 H(23) 4209 3248 -466 58 H(24) 3087 3112 263 54 H(26) 3906 4945 5420 37 H(27) 5618 5178 5700 46 H(28) 6061

  18. Aluminium Diphosphamethanides: Hidden Frustrated Lewis Pairs.

    Science.gov (United States)

    Styra, Steffen; Radius, Michael; Moos, Eric; Bihlmeier, Angela; Breher, Frank

    2016-07-04

    The synthesis and characterisation of two aluminium diphosphamethanide complexes, [Al(tBu)2 {κ(2) P,P'-Mes*PCHPMes*}] (3) and [Al(C6 F5 )2 {κ(2) P,P'-Mes*PCHPMes*}] (4), and the silylated analogue, Mes*PCHP(SiMe3 )Mes* (5), are reported. The aluminium complexes feature four-membered PCPAl core structures consisting of diphosphaallyl ligands. The silylated phosphine 5 was found to be a valuable precursor for the synthesis of 4 as it cleanly reacts with the diaryl aluminium chloride [(C6 F5 )2 AlCl]2 . The aluminium complex 3 reacts with molecular dihydrogen at room temperature under formation of the acyclic σ(2) λ(3) ,σ(3) λ(3) -diphosphine Mes*PCHP(H)Mes* and the corresponding dialkyl aluminium hydride [tBu2 AlH]3 . Thus, 3 belongs to the family of so-called hidden frustrated Lewis pairs.

  19. Hydroxyaluminosilicates and acute aluminium toxicity in fish

    Science.gov (United States)

    Exley; Pinnegar; Taylor

    1997-11-21

    The essentiality of silicon in biology might be explained in the terms of its chemistry with aluminium. In a previous study we demonstrated the elimination of acute aluminium toxicity in fish by silicon. We suggested that the reaction of silicic acid with aluminium to form hydroxyaluminosilicates reduced the biological availability, and hence toxicity, of aluminium. Though assumed in a burgeoning number of studies and contended in others this detoxification mechanism has remained unproven. Herein we have tested the toxicity of hydroxyaluminosilicates in fish and in doing so we have provided evidence which strongly supports a role for hydroxyaluminiosilicates in the elimination of acute aluminium toxicity in fish by silicon.Copyright 1997 Academic Press Limited Copyright 1997 Academic Press Limited

  20. Quantification of indium in steel using PIXE

    Energy Technology Data Exchange (ETDEWEB)

    Oliver, A.; Miranda, J.; Rickards, J.; Cheang, J.C.

    1989-04-01

    The quantitative analysis of steel endodontics tools was carried out using low-energy protons (/le/ 700 keV). A computer program for a thick-target analysis which includes enhancement due to secondary fluorescence was used. In this experiment the L-lines of indium are enhanced due to the proximity of other elements' K-lines to the indium absorption edge. The results show that the ionization cross section expression employed to evaluate this magnitude is important. (orig.).

  1. Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide

    DEFF Research Database (Denmark)

    Taboryski, Rafael Jozef; Clausen, Thomas; Kutchinsky, jonatan

    1997-01-01

    We have fabricated and characterized planar superconductor-semiconductor-superconductor (S-Sm-S) junctions with a high quality (i.e. low barrier) interface between an n++ modulation doped conduction layer in MBE grown GaAs and in situ deposited Al electrodes. The Schottky barrier at the S...

  2. Magnesium, zinc, aluminium and gallium hydride complexes of the transition metals.

    Science.gov (United States)

    Butler, Michael J; Crimmin, Mark R

    2017-01-24

    The preparation and applications of heterobimetallic complexes continue to occupy researchers in the fields of organometallic, main group, and coordination chemistry. This interest stems from the promise these complexes hold as precursors to materials, reagents in synthesis and as new catalysis. Here we survey and organise the state-of-the-art understanding of the TM-H-M linkage (M = Mg, Zn, Al, Ga). We discuss the structure and bonding in these complexes, their known reactivity, and their largely unrealised potential in catalysis.

  3. Microwave-assisted polyol synthesis of aluminium- and indium-doped ZnO nanocrystals.

    Science.gov (United States)

    Hammarberg, Elin; Prodi-Schwab, Anna; Feldmann, Claus

    2009-06-01

    Microwave heating is applied to prepare suspensions of ZnO:In (IZO) and ZnO:Al (AZO) nanocrystals in diethylene glycol as a high-boiling multidentate alcohol (so-called polyol). Both n-doped zinc oxides are realized with high yields and in suspensions with solid contents up to 10 wt-%. These suspensions are colloidally stable for months. According to dynamic light scattering, scanning electron microscopy, transmission electron microscopy, X-ray diffraction patterns and Brunauer-Emmett-Teller analysis as-prepared particles turn out to be single crystalline with an average diameter of 10-15 nm, a near monodisperse size distribution, and a low degree of agglomeration. As-prepared samples exhibit high resistivities due to the adhesion of DEG as a stabilizer on the particle surface. Subsequent to specific thermal post-treatment resistivities of 2.0 x 10(-1) and 5.7 x 10(-1) Omegacm are obtained for IZO and AZO powders, respectively. As a proof of the concept, thin layers are deposited on glass plates using a simple solvent evaporation technique. Post-treated layers exhibit a visible transmittance of about 80% and resistivities of 2.1 x 10(-1) Omegacm (IZO) and 2.6 x 10(-1) Omegacm (AZO). The bandgap of post-treated powders and thin layers is calculated to 3.2 and 3.3 eV, respectively.

  4. A Reaction Coating on Aluminium Alloys by Laser Processing

    NARCIS (Netherlands)

    Zhou, X.B.; Hosson, J.Th.M. De

    1993-01-01

    An aluminium oxide layer of 100 µm in thickness has been successfully coated on aluminium alloy 6061 and pure aluminium using a powder mixture of silicon oxide and aluminium by laser processing. A strong Al/Al2O3 interface was formed. The exothermic chemical reaction between SiO2 and Al may promote

  5. Single gallium nitride nanowire lasers.

    Science.gov (United States)

    Johnson, Justin C; Choi, Heon-Jin; Knutsen, Kelly P; Schaller, Richard D; Yang, Peidong; Saykally, Richard J

    2002-10-01

    There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong two-dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale electronics and optoelectronic devices, including lasersand nonlinear optical frequency converters. Gallium nitride (GaN) is a wide-bandgap semiconductor of much practical interest, because it is widely used in electrically pumped ultraviolet-blue light-emitting diodes, lasers and photodetectors. Recent progress in microfabrication techniques has allowed stimulated emission to be observed from a variety of GaN microstructures and films. Here we report the observation of ultraviolet-blue laser action in single monocrystalline GaN nanowires, using both near-field and far-field optical microscopy to characterize the waveguide mode structure and spectral properties of the radiation at room temperature. The optical microscope images reveal radiation patterns that correlate with axial Fabry-Perot modes (Q approximately 10(3)) observed in the laser spectrum, which result from the cylindrical cavity geometry of the monocrystalline nanowires. A redshift that is strongly dependent on pump power (45 meV microJ x cm(-2)) supports the idea that the electron-hole plasma mechanism is primarily responsible for the gain at room temperature. This study is a considerable advance towards the realization of electron-injected, nanowire-based ultraviolet-blue coherent light sources.

  6. Gallium-67 scintigraphy in patients with hemochromatosis treated by deferoxamine

    Energy Technology Data Exchange (ETDEWEB)

    Nagamachi, Shigeki; Hoshi, Hiroaki; Jinnouchi, Seishi; Ono, Seiji; Watanabe, Katsushi

    1988-05-01

    Gallium scintigraphy was performed as an aid for determining the presence or absence of malignant neoplasm in two patients with hemochromatosis treated by deferoxamine. However, gallium scan images could not be obtained. So gallium scintigraphy was performed once more to investigate the cause of low activity. Both patients had heavy urinary excretion of gallium in the first 24 hrs after the injection, and activity was very low on the day of examination. This phenomenon may be attributed to the effect of deferoxamine which is highly bound to the gallium.

  7. Investigation of the aluminium-aluminium oxide reversible transformation as observed by hot stage electron microscopy.

    Science.gov (United States)

    Grove, C. A.; Judd, G.; Ansell, G. S.

    1972-01-01

    Thin foils of high purity aluminium and an Al-Al2O3 SAP type of alloy were oxidised in a specially designed hot stage specimen chamber in an electron microscope. Below 450 C, amorphous aluminium oxide formed on the foil surface and was first detectable at foil edges, holes, and pits. Islands of aluminium then nucleated in this amorphous oxide. The aluminium islands displayed either a lateral growth with eventual coalescence with other islands, or a reoxidation process which caused the islands to disappear. The aluminium island formation was determined to be related to the presence of the electron beam. A mechanism based upon electron charging due to the electron beam was proposed to explain the nucleation, growth, coalescence, disappearance, and geometry of the aluminium islands.

  8. Spin Injection in Indium Arsenide

    Directory of Open Access Journals (Sweden)

    Mark eJohnson

    2015-08-01

    Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.

  9. Characteristics of cast and welded aluminium nodes

    Energy Technology Data Exchange (ETDEWEB)

    Oedegaard, J.; Polanco, M.; Syvertsen, F.; Sund, H. [SINTEF, Trondheim (Norway). Materials Technology

    2000-07-01

    It has been demonstrated that sand cast aluminium nodes can be produced with properties that gives competitive energy absorption capacity compared with welded aluminium nodes. Sand cast nodes could be mass-produced to a low cost and with properties that should be competitive to the properties of fusion welded nodes. This may open for simpler and more cost-effective joint alternatives when production of aluminium space-frames and subassemblies are in focus. Cast nodes joined to extruded members by adhesive bonding could be one example. (orig.)

  10. Thermal transformations of aluminium-aluminium oxide systems in nanosize layers

    OpenAIRE

    2007-01-01

    Aluminium film of more than 2 nm thick indicates, but less than 2 nm do not indicate characteristic absorption and reflection bands for aluminium in range ?=190...1100 nm. By spectrophotometric, gravimetric and microscopic methods it is stated that thickness, mass and absorption, reflection spectrum of aluminium films (d=2...200 nm) undergo considerable transformations as a result of heat treatment in an interval of temperatures 373...600 K during 1...140 min in atmospheric conditions. Kineti...

  11. Elevated brain aluminium and early onset Alzheimer’s disease in an individual occupationally exposed to aluminium: a case report

    OpenAIRE

    2014-01-01

    Introduction Aluminium is a known neurotoxin and occupational exposure to aluminium has been implicated in neurological disease including Alzheimer’s disease. Here we present the first comprehensive and unequivocal data demonstrating significantly elevated brain aluminium content in an individual occupationally exposed to aluminium. Case presentation A 66-year-old Caucasian man who died with Alzheimer’s disease showed significantly elevated brain aluminium content, 2.98 (2.73) μg/g dry weight...

  12. Dietary aluminium Intake Level for Rent Animals in a Primary and Secondary Aluminium Industry Surrounding Area

    Directory of Open Access Journals (Sweden)

    Mărioara Drugă

    2010-05-01

    Full Text Available The study was carried out in an aluminium industry surrounding area on purpose to evaluate dietary aluminium intake level for rent animals originated from fodder and water consumed by them. There were taken feed and water samples in different periods and from increasing distances from industrial platform, determined the aluminium level by atomic spectroscopy and calculated the rations for cattle and poultry. Conclusions: aluminium dietary intake level by ration depends by forage period for studied species, rations structure and distance from industrial platform and didn’t reach toxic level in any case.

  13. The meaning of aluminium exposure on human health and aluminium-related diseases.

    Science.gov (United States)

    Crisponi, Guido; Fanni, Daniela; Gerosa, Clara; Nemolato, Sonia; Nurchi, Valeria M; Crespo-Alonso, Miriam; Lachowicz, Joanna I; Faa, Gavino

    2013-02-01

    The aim of this review is to attempt to answer extremely important questions related to aluminium-related diseases. Starting from an overview on the main sources of aluminium exposure in everyday life, the principal aspects of aluminium metabolism in humans have been taken into consideration in an attempt to enlighten the main metabolic pathways utilised by trivalent metal ions in different organs. The second part of this review is focused on the available evidence concerning the pathogenetic consequences of aluminium overload in human health, with particular attention to its putative role in bone and neurodegenerative human diseases.

  14. Synchrotron X-ray fluorescence microscopy of gallium in bladder tissue following gallium maltolate administration during urinary tract infection.

    Science.gov (United States)

    Ball, Katherine R; Sampieri, Francesca; Chirino, Manuel; Hamilton, Don L; Blyth, Robert I R; Sham, Tsun-Kong; Dowling, Patricia M; Thompson, Julie

    2013-11-01

    A mouse model of cystitis caused by uropathogenic Escherichia coli was used to study the distribution of gallium in bladder tissue following oral administration of gallium maltolate during urinary tract infection. The median concentration of gallium in homogenized bladder tissue from infected mice was 1.93 μg/g after daily administration of gallium maltolate for 5 days. Synchrotron X-ray fluorescence imaging and X-ray absorption spectroscopy of bladder sections confirmed that gallium arrived at the transitional epithelium, a potential site of uropathogenic E. coli infection. Gallium and iron were similarly but not identically distributed in the tissues, suggesting that at least some distribution mechanisms are not common between the two elements. The results of this study indicate that gallium maltolate may be a suitable candidate for further development as a novel antimicrobial therapy for urinary tract infections caused by uropathogenic E. coli.

  15. Synchrotron X-Ray Fluorescence Microscopy of Gallium in Bladder Tissue following Gallium Maltolate Administration during Urinary Tract Infection

    Science.gov (United States)

    Sampieri, Francesca; Chirino, Manuel; Hamilton, Don L.; Blyth, Robert I. R.; Sham, Tsun-Kong; Dowling, Patricia M.; Thompson, Julie

    2013-01-01

    A mouse model of cystitis caused by uropathogenic Escherichia coli was used to study the distribution of gallium in bladder tissue following oral administration of gallium maltolate during urinary tract infection. The median concentration of gallium in homogenized bladder tissue from infected mice was 1.93 μg/g after daily administration of gallium maltolate for 5 days. Synchrotron X-ray fluorescence imaging and X-ray absorption spectroscopy of bladder sections confirmed that gallium arrived at the transitional epithelium, a potential site of uropathogenic E. coli infection. Gallium and iron were similarly but not identically distributed in the tissues, suggesting that at least some distribution mechanisms are not common between the two elements. The results of this study indicate that gallium maltolate may be a suitable candidate for further development as a novel antimicrobial therapy for urinary tract infections caused by uropathogenic E. coli. PMID:23877680

  16. Indium adhesion provides quantitative measure of surface cleanliness

    Science.gov (United States)

    Krieger, G. L.; Wilson, G. J.

    1968-01-01

    Indium tipped probe measures hydrophobic and hydrophilic contaminants on rough and smooth surfaces. The force needed to pull the indium tip, which adheres to a clean surface, away from the surface provides a quantitative measure of cleanliness.

  17. Shear Viscosity of Aluminium under Shock Compression

    Institute of Scientific and Technical Information of China (English)

    LIU Fu-Sheng; YANG Mei-Xia; LIU Qi-Wen; CHEN Jun-Xiang; JING Fu-Qian

    2005-01-01

    @@ Based on the Newtonian viscous fluid model and the analytic perturbation theory of Miller and Ahrens for the oscillatory damping of a sinusoidal shock front, a flyer-impact technique is developed to investigate the effecti veviscosity of shocked aluminium.

  18. Gallium Nitride Crystals: Novel Supercapacitor Electrode Materials.

    Science.gov (United States)

    Wang, Shouzhi; Zhang, Lei; Sun, Changlong; Shao, Yongliang; Wu, Yongzhong; Lv, Jiaxin; Hao, Xiaopeng

    2016-05-01

    A type of single-crystal gallium nitride mesoporous membrane is fabricated and its supercapacitor properties are demonstrated for the first time. The supercapacitors exhibit high-rate capability, stable cycling life at high rates, and ultrahigh power density. This study may expand the range of crystals as high-performance electrode materials in the field of energy storage.

  19. Synergistic Extraction of Gallium for Sulfate Solution

    Institute of Scientific and Technical Information of China (English)

    DENGTong; HUANGLijuan; 等

    2002-01-01

    A novel extractant mixture, di-2-ethylhexyl phosphate (DEHPA) plus HX, was propose and tested for recovering gallium from sulfate solution.It was found that the extraction capacity of DEPHA for gallium from sulfate solution could be enhanced significantly due to the synergistic effect of acidix extractant HX. Gallium extraction is negligible below pH 0 and highly sensitive to pH of aqueous phase in the range from 0 to 1, and satisfactory extraction can be gained at pH>1. More than 96% Ga extraction was obtained using 15% DEHPA plus 2% HX. Although Fe(Ⅲ) was found to be extracted preferentially to Ga (Ⅲ), effective extraction of Ga (Ⅲ) was possible by reducing ferric to the ferrous state prior to extraction. A loaded organic phase containing 0.48g·L-1 Ga could be produced from solution of 0.12g·L-1 Ga at A/O ratio of 4:1 via three mixer-settler operation stages. Gallium was stripped quantitatively from the loaded organic phase with 1.5mol·L-1 of sulfuric acid.

  20. Anisotropy of the magnetic susceptibility of gallium

    Science.gov (United States)

    Pankey, T.

    1960-01-01

    The bulk magnetic susceptibilities of single gallium crystals and polycrystalline gallium spheres were measured at 25??C. The following anisotropic diamagnetic susceptibilities were found: a axis (-0.119??0. 001)??10-6 emu/g, b axis (-0.416??0.002)??10 -6 emu/g, and c axis (-0.229??0.001) emu/g. The susceptibility of the polycrystalline spheres, assumed to be the average value for the bulk susceptibility of gallium, was (-0.257??0.003)??10-6 emu/g at 25??C, and (-0.299??0.003)??10-6 emu/g at -196??C. The susceptibility of liquid gallium was (0.0031??0.001) ??10-6 emu/g at 30??C and 100??C. Rotational diagrams of the susceptibilities in the three orthogonal planes of the unit cell were not sinusoidal. The anisotropy in the single crystals was presumably caused by the partial overlap of Brillouin zone boundaries by the Fermi-energy surface. The large change in susceptibility associated with the change in state was attributed to the absence of effective mass influence in the liquid state. ?? 1960 The American Institute of Physics.

  1. TRANSPARENT CONDUCTING OXIDE SYNTHESIS OF ALUMINIUM DOPED ZINC OXIDES BY CHEMICAL COPRECIPITATION

    Directory of Open Access Journals (Sweden)

    Silvia Maioco

    2013-03-01

    Full Text Available Aluminium doped zinc oxides (AZO are promising replacements for tin doped indium oxides (ITO but thin films show a wide range of physical properties strongly dependent on deposition process conditions. Submicrometric 1% aluminum doped zinc oxide ceramics (AZO are examined, prepared by coprecipitation, from Zn(NO32 and Al(NO33 aqueous solutions, sintered at 1200°C and subsequently annealed in 10-16 atm controlled oxygen fugacity atmospheres, at 1000°C. Electrical resistivity diminishes by two orders of magnitude after two hours of annealing and the Seebeck coefficient gradually changes from -140 to -50 µV/K within 8 h. It is concluded that increased mobility is dominant over the increased carrier density, induced by changes in metal-oxygen stoichiometry

  2. Electrical Conductivity of Aluminium Alloy Foams

    Institute of Scientific and Technical Information of China (English)

    凤仪; 郑海务; 朱震刚; 祖方遒

    2002-01-01

    Closed-cell aluminium alloy foams were produced using the powder metallurgical technique. The effect of porosityand cell diameter on the electrical conductivity of foams was investigated and the results were compared with anumber of models. It was found that the percolation theory can be successfully applied to describe the dependenceof the electrical conductivity of aluminium alloy foams on the relative density. The cell diameter has a negligibleeffect on the electrical conductivity of foams.

  3. DETERMINATION OF IMPURITY ELEMENTS IN ALUMINIUM

    Institute of Scientific and Technical Information of China (English)

    侯小琳; 张永保

    1994-01-01

    Twenty five impurity elements in aluminium applied as reactor material are determined.Titanium and nickel are determined with epithermal neutron activation analysis(NAA),magnesium and silicon by inductance coupling plasma emission spectra(ICP),other elements by thermal NAA.The fission coefficient of uranium is given by an experiment,the interferences of uranium to Ce,Nd,Mo,Zr,La,Sm are subtracted.The detection limits of these methods to all of impurity elements in aluminium are calculated.

  4. Bumblebee Pupae Contain High Levels of Aluminium

    OpenAIRE

    2015-01-01

    The causes of declines in bees and other pollinators remains an on-going debate. While recent attention has focussed upon pesticides, other environmental pollutants have largely been ignored. Aluminium is the most significant environmental contaminant of recent times and we speculated that it could be a factor in pollinator decline. Herein we have measured the content of aluminium in bumblebee pupae taken from naturally foraging colonies in the UK. Individual pupae were acid-digested in a mic...

  5. Bumblebee pupae contain high levels of aluminium

    OpenAIRE

    2015-01-01

    The causes of declines in bees and other pollinators remains an on-going debate. While recent attention has focussed upon pesticides, other environmental pollutants have largely been ignored. Aluminium is the most significant environmental contaminant of recent times and we speculated that it could be a factor in pollinator decline. Herein we have measured the content of aluminium in bumblebee pupae taken from naturally foraging colonies in the UK. Individual pupae were acid-digested in a mic...

  6. Preparation and characterization of mesoporous indium oxide

    Institute of Scientific and Technical Information of China (English)

    ZHAO Yi-zhe; CHENG Zhi-xuan; PAN Qing-yi; DONG Xiao-wen; ZHANG Jian-cheng; PAN Ling-li

    2009-01-01

    Indium oxide nanocrystals with mesoporous structure were successfully synthesized by using triblock copolymer as a template,and characterized by thermogravimetry-differential scanning calorimeter (TG-DSC),X-ray powder diffraction (XRD),high resolution transmission electron microscopy (HRTEM) and N2 adsorption.A high EO/PO ratio is thought to be the key point to prepare mesoporous In2O3.The results show that the average pore diameter of the products is 6 nm,the BET surface area is 54.78 m2/g,and the adsorbing pore volume is 0.345 cm3/g.After comparing with normal indium oxide nanoparticles by BET test,mesoporous indium oxide demonstrates a large difference in adsorbing pore volume and average pore diameters from normal ones.

  7. Gallium 67 scintigraphy in glomerular disease

    Energy Technology Data Exchange (ETDEWEB)

    Bakir, A.A.; Lopez-Majano, V.; Levy, P.S.; Rhee, H.L.; Dunea, G.

    1988-12-01

    To evaluate the diagnostic usefulness of gallium 67 scintigraphy in glomerular disease, 45 patients with various glomerulopathies, excluding lupus nephritis and renal vasculitis, were studied. Persistent renal visualization 48 hours after the gallium injection, a positive scintigram, was graded as + (less than), ++ (equal to), and +++ (greater than) the hepatic uptake. Positive scintigrams were seen in ten of 16 cases of focal segmental glomerulosclerosis, six of 11 cases of proliferative glomerulonephritis, and one case of minimal change, and one of two cases of membranous nephropathy; also in three of six cases of sickle glomerulopathy, two cases of diabetic neuropathy, one of two cases of amyloidosis, and one case of mild chronic allograft rejection. The 25 patients with positive scans were younger than the 20 with negative scans (31 +/- 12 v 42 +/- 17 years; P less than 0.01), and exhibited greater proteinuria (8.19 +/- 7.96 v 2.9 +/- 2.3 S/d; P less than 0.01) and lower serum creatinine values (2 +/- 2 v 4.1 +/- 2.8 mg/dL; P less than 0.01). The amount of proteinuria correlated directly with the intensity grade of the gallium image (P less than 0.02), but there was no correlation between the biopsy diagnosis and the outcome of the gallium scan. It was concluded that gallium scintigraphy is not useful in the differential diagnosis of the glomerular diseases under discussion. Younger patients with good renal function and heavy proteinuria are likely to have a positive renal scintigram regardless of the underlying glomerulopathy.

  8. A preliminary study of the dermal absorption of aluminium from antiperspirants using aluminium-26.

    Science.gov (United States)

    Flarend, R; Bin, T; Elmore, D; Hem, S L

    2001-02-01

    Aluminium chlorohydrate (ACH), the active ingredient in many antiperspirants, was labeled with the radioisotope 26Al. The labeled ACH was then fractionated into about 100 samples using gel filtration chromatography. Each fraction was analyzed for 26Al and total aluminium content. Aluminium-26 was only detected in the fractions that also contained aluminium, which verified that the ACH was uniformly labeled. 84 mg of the labeled ACH was then applied to a single underarm of two adult subjects with blood and urine samples being collected over 7 weeks. Tape-stripping and mild washings of the skin were also collected for the first 6 days. Results indicate that only 0.012% of the applied aluminium was absorbed through the skin. At this rate, about 4 microg of aluminium is absorbed from a single use of ACH on both underarms. This is about 2.5% of the aluminium typically absorbed by the gut from food over the same time period. Therefore, a one-time use of ACH applied to the skin is not a significant contribution to the body burden of aluminium.

  9. Determination of Aluminium Content in Aluminium Hydroxide Formulation by FT-NIR Transmittance Spectroscopy

    DEFF Research Database (Denmark)

    Lai, Xuxin; Zheng, Yiwu; Søndergaard, Ib;

    2007-01-01

    A method for determining the aluminium content of an aluminium hydroxide suspension using near infrared (NIR) transmittance spectroscopy has been developed. Inductively coupled plasma-atomic emission spectroscopy (ICP-AES) was used as reference method. The factors influencing the NIR analysis...

  10. Aluminium exclusion and aluminium tolerance in woody plants

    Directory of Open Access Journals (Sweden)

    Ivano eBrunner

    2013-06-01

    Full Text Available The aluminium (Al cation Al3+ is highly rhizotoxic and is a major stress factor to plants on acid soils, which cover large areas of tropical and boreal regions. Many woody plant species are native to acid soils and are well adapted to high Al3+ conditions. In tropical regions, both woody Al accumulator and non-Al accumulator plants occur, whereas in boreal regions woody plants are non-Al accumulators. The mechanisms of these adaptations can be divided into those that facilitate the exclusion of Al3+ from root cells (exclusion mechanisms and those that enable plants to tolerate Al3+ once it has entered the root and shoot symplast (internal tolerance mechanisms. The biochemical and molecular basis of these mechanisms have been intensively studied in several crop plants and the model plant Arabidopsis. In this review, we examine the current understanding of Al3+ exclusion and tolerance mechanisms from woody plants. In addition, we discuss the ecology of woody non-Al accumulator and Al accumulator plants, and present examples of Al3+ adaptations in woody plant populations. This paper complements previous reviews focusing on crop plants and provides insights into evolutionary processes operating in plant communities that are widespread on acid soils.

  11. Toxicity of dissolved and precipitated aluminium to marine diatoms.

    Science.gov (United States)

    Gillmore, Megan L; Golding, Lisa A; Angel, Brad M; Adams, Merrin S; Jolley, Dianne F

    2016-05-01

    Localised aluminium contamination can lead to high concentrations in coastal waters, which have the potential for adverse effects on aquatic organisms. This research investigated the toxicity of 72-h exposures of aluminium to three marine diatoms (Ceratoneis closterium (formerly Nitzschia closterium), Minutocellus polymorphus and Phaeodactylum tricornutum) by measuring population growth rate inhibition and cell membrane damage (SYTOX Green) as endpoints. Toxicity was correlated to the time-averaged concentrations of different aluminium size-fractions, operationally defined as aluminium exposure varied between diatom species. C. closterium was the most sensitive species (10% inhibition of growth rate (72-h IC10) of 80 (55-100)μg Al/L (95% confidence limits)) while M. polymorphus (540 (460-600)μg Al/L) and P. tricornutum (2100 (2000-2200)μg Al/L) were less sensitive (based on measured total aluminium). Dissolved aluminium was the primary contributor to toxicity in C. closterium, while a combination of dissolved and precipitated aluminium forms contributed to toxicity in M. polymorphus. In contrast, aluminium toxicity to the most tolerant diatom P. tricornutum was due predominantly to precipitated aluminium. Preliminary investigations revealed the sensitivity of C. closterium and M. polymorphus to aluminium was influenced by initial cell density with aluminium toxicity significantly (paluminium toxicity to diatoms do not involve compromising the plasma membrane. These results indicate that marine diatoms have a broad range in sensitivity to aluminium with toxic mechanisms related to both dissolved and precipitated aluminium.

  12. Interstitial pulmonary disorders in indium-processing workers.

    Science.gov (United States)

    Chonan, T; Taguchi, O; Omae, K

    2007-02-01

    The production of indium-tin oxide has increased, owing to the increased manufacture of liquid-crystal panels. It has been reported that interstitial pneumonia occurred in two indium-processing workers; therefore, the present study aimed to evaluate whether interstitial pulmonary disorders were prevalent among indium workers. The study was carried out in 108 male workers in the indium plant where the two interstitial pneumonia patients mentioned above were employed, and included high-resolution computed tomography (HRCT) of the lungs, pulmonary function tests and analysis of serum sialylated carbohydrate antigen KL-6 and the serum indium concentration. Significant interstitial changes were observed in 23 indium workers on HRCT and serum KL-6 was abnormally high (>500 U x mL(-1)) in 40 workers. Workers with serum indium concentrations in the highest quartile had significantly longer exposure periods, greater HRCT changes, lower diffusing capacity of the lung for carbon monoxide and higher KL-6 levels compared with those in the lowest quartile. The serum indium concentration was positively correlated with the KL-6 level and with the degree of HRCT changes. In conclusion, the results of the present study indicated that serum KL-6 and high-resolution computed tomography abnormalities were prevalent among indium workers and that these abnormalities increased with the indium burden, suggesting that inhaled indium could be a potential cause of occupational lung disease.

  13. Developmental toxicity of indium: embryotoxicity and teratogenicity in experimental animals.

    Science.gov (United States)

    Nakajima, Mikio; Usami, Makoto; Nakazawa, Ken; Arishima, Kazuyoshi; Yamamoto, Masako

    2008-12-01

    Indium, a precious metal classified in group 13 (IIIB) in the periodic table, has been used increasingly in the semiconductor industry. Because indium is a rare metal, technology for indium recycling from transparent conducting films for liquid crystal displays is desired, and its safety evaluation is becoming increasingly necessary. The developmental toxicity of indium in experimental animals was summarized. The intravenous or oral administration of indium to pregnant animals causes growth inhibition and the death of embryos in hamsters, rats, and mice. The intravenous administration of indium to pregnant animals causes embryonic or fetal malformation, mainly involving digit and tail deformities, in hamsters and rats. The oral administration of indium also induces fetal malformation in rats and rabbits, but requires higher doses. No teratogenicity has been observed in mice. Caudal hypoplasia, probably due to excessive cell loss by increased apoptosis in the tailbud, in the early postimplantation stage was considered to account for indium-induced tail malformation as a possible pathogenetic mechanism. Findings from in vitro experiments indicated that the embryotoxicity of indium could have direct effects on the conceptuses. Toxicokinetic studies showed that the embryonic exposure concentration was more critical than the exposure time regarding the embryotoxicity of indium. It is considered from these findings that the risk of the developmental toxicity of indium in humans is low, unless an accidentally high level of exposure or unknown toxic interaction occurs because of possible human exposure routes and levels (i.e. oral, very low-level exposure).

  14. Proteomic analysis of indium embryotoxicity in cultured postimplantation rat embryos.

    Science.gov (United States)

    Usami, Makoto; Nakajima, Mikio; Mitsunaga, Katsuyoshi; Miyajima, Atsuko; Sunouchi, Momoko; Doi, Osamu

    2009-12-01

    Indium embryotoxicity was investigated by proteomic analysis with two-dimensional electrophoresis of rat embryos cultured from day 10.5 of gestation for 24h in the presence of 50 microM indium trichloride. In the embryo proper, indium increased quantity of several protein spots including those identified as serum albumin, phosphorylated cofilin 1, phosphorylated destrin and tyrosyl-tRNA synthetase. The increased serum albumin, derived from the culture medium composed of rat serum, may decrease the toxicity of indium. The increase of phosphorylated cofilin 1 might be involved in dysmorphogenicity of indium through perturbation of actin functions. In the yolk sac membrane, indium induced quantitative and qualitative changes in the protein spots. Proteins from appeared spots included stress proteins, and those from decreased or disappeared spots included serum proteins, glycolytic pathway enzymes and cytoskeletal proteins, indicating yolk sac dysfunction. Thus, several candidate proteins that might be involved in indium embryotoxicity were identified.

  15. The oxidation and surface speciation of indium and indium oxides exposed to atmospheric oxidants

    Science.gov (United States)

    Detweiler, Zachary M.; Wulfsberg, Steven M.; Frith, Matthew G.; Bocarsly, Andrew B.; Bernasek, Steven L.

    2016-06-01

    Metallic indium and its oxides are useful in electronics applications, in transparent conducting electrodes, as well as in electrocatalytic applications. In order to understand more fully the speciation of the indium and oxygen composition of the indium surface exposed to atmospheric oxidants, XPS, HREELS, and TPD were used to study the indium surface exposed to water, oxygen, and carbon dioxide. Clean In and authentic samples of In2O3 and In(OH)3 were examined with XPS to provide standard spectra. Indium was exposed to O2 and H2O, and the ratio of O2 - to OH- in the O1s XPS region was used to monitor oxidation and speciation of the surface. HREELS and TPD indicate that water dissociates on the indium surface even at low temperature, and that In2O3 forms at higher temperatures. Initially, OH- is the major species at the surface. Pure In2O3 is also OH- terminated following water exposure. Ambient pressure XPS studies of water exposure to these surfaces suggest that high water pressures tend to passivate the surface, inhibiting extensive oxide formation.

  16. Sinterless Formation Of Contacts On Indium Phosphide

    Science.gov (United States)

    Weizer, Victor G.; Fatemi, Navid S.

    1995-01-01

    Improved technique makes it possible to form low-resistivity {nearly equal to 10(Sup-6) ohm cm(Sup2)} electrical contacts on indium phosphide semiconductor devices without damaging devices. Layer of AgP2 40 Angstrom thick deposited on InP before depositing metal contact. AgP2 interlayer sharply reduces contact resistance, without need for sintering.

  17. Aluminium toxicity in winter wheat

    Directory of Open Access Journals (Sweden)

    Szabó A.

    2015-01-01

    Full Text Available Aluminium is the most frequent metal of the earth crust; it occurs mainly as biologically inactive, insoluble deposit. Environmental problems, industrial contaminations and acid rains increase the soil acidity, leading to the mobilization of Al. Half of the world’s potential arable lands are acidic; therefore, Al-toxicity decreases crop productivity. Wheat is a staple food for 35% of the world population. The effects of Al-stress (0.1 mM were studied on winter wheat; seedlings were grown hydroponically, at acidic pH. After two weeks, the root weight was decreased; a significant difference was found in the P- and Ca-content. The shoot weight and element content changed slightly; Al-content in the root was one magnitude higher than in the shoot, while Al-translocation was limited. The root plasma membrane H+-ATPase has central role in the uptake processes; Al-stress increased the Mg2+-ATPase activity of the microsomal fraction.

  18. Investigation of the formability of aluminium alloys at elevated temperatures

    Science.gov (United States)

    Tisza, M.; Budai, D.; Kovács, P. Z.; Lukács, Zs

    2016-11-01

    Aluminium alloys are more and more widely applied in car body manufacturing. Increasing the formability of aluminium alloys are one of the most relevant tasks in todays’ research topics. In this paper, the focus will be on the investigation of the formability of aluminium alloys concerning those material grades that are more widely applied in the automotive industry including the 5xxx and 6xxx aluminium alloy series. Recently, besides the cold forming of aluminium sheets the forming of aluminium alloys at elevated temperatures became a hot research topic, too. In our experimental investigations, we mostly examined the EN AW 5754 and EN AW 6082 aluminium alloys at elevated temperatures. We analysed the effect of various material and process parameters (e.g. temperature, sheet thickness) on the formability of aluminium alloys with particular emphasis on the Forming Limit Diagrams at elevated temperatures in order to find the optimum forming conditions for these alloys.

  19. Structural colours and applications to anodised aluminium surfaces

    DEFF Research Database (Denmark)

    Johansen, Villads Egede

    This thesis investigates possible ways of creating aluminium with a milky white, metallic appearance for decorative purposes. Since white cannot be obtained through traditional absorption based dyeing of aluminium, optical mechanisms based on scattering by nanostructures are studied in order...

  20. Effect of aluminium phosphate as admixture on oxychloride cement

    Indian Academy of Sciences (India)

    M P S Chandrawat; R N Yadav

    2000-02-01

    The effect of admixing of aluminium phosphate on oxychloride cement in the matrix has been investigated. It is shown that aluminium phosphate retards the setting process of the cement and improves water-tightness.

  1. Steam Assisted Accelerated Growth of Oxide Layer on Aluminium Alloys

    OpenAIRE

    2013-01-01

    Corrosion resistance of aluminium alloys is related to the composition and morphology of the oxide film on the surface of aluminium. In this paper we investigated the use of steam on the surface modification of aluminium to produce boehmite films. The study reveals a detailed investigation of the effect of vapour pressure, structure of intermetallic particles and thickness of boehmite films on the corrosion behaviour of aluminium alloys.

  2. Aluminium allergy and granulomas induced by vaccinations for children

    DEFF Research Database (Denmark)

    Andersen, Rosa Marie O; Zachariae, Claus; Johansen, Jeanne Duus

    2014-01-01

    Vaccination with aluminium-adsorbed vaccines can induce aluminium allergy with persistent itching subcutaneous nodules at the injection site - vaccination granulomas. In this article we give an overview of childhood aluminium-adsorbed vaccines available in Denmark. Through literature studies we...... examine the incidence, the symptoms and the prognosis for the vaccination granulomas and the allergy. Finally we discuss the status in Denmark....

  3. Stability of aluminium beams in case of fire

    NARCIS (Netherlands)

    Meulen, O.R. van der; Soetens, F.; Maljaars, J.

    2014-01-01

    Fire is often the dominant design criterion for aluminium structures. Present design rules for aluminium constructions in fire neglect both the decrease in susceptibility to local buckling and the effects of creep, that are intrinsic to aluminium. They may therefore either overestimate or underestim

  4. [Aluminium allergy and granulomas induced by vaccinations for children].

    Science.gov (United States)

    Andersen, Rosa Marie Ø; Zachariae, Claus; Johansen, Jeanne Duus

    2015-04-27

    Vaccination with aluminium-adsorbed vaccines can induce aluminium allergy with persistent itching subcutaneous nodules at the injection site – vaccination granulomas. In this article we give an overview of childhood aluminium-adsorbed vaccines available in Denmark. Through literature studies we examine the incidence, the symptoms and the prognosis for the vaccination granulomas and the allergy. Finally we discuss the status in Denmark.

  5. Energy Absorption of Monolithic and Fibre Reinforced Aluminium Cylinders

    NARCIS (Netherlands)

    De Kanter, J.L.C.G.

    2006-01-01

    Summary accompanying the thesis: Energy Absorption of Monolithic and Fibre Reinforced Aluminium Cylinders by Jens de Kanter This thesis presents the investigation of the crush behaviour of both monolithic aluminium cylinders and externally fibre reinforced aluminium cylinders. The research is based

  6. Aluminium hydroxide-induced granulomas in pigs

    DEFF Research Database (Denmark)

    Valtulini, S; Macchi, C; Ballanti, P

    2005-01-01

    The effect of intramuscular injection of 40 mg/2 ml aluminium hydroxide in the neck of pigs was examined in a number of ways. The investigation followed repeated slaughterhouse reports, according to which 64.8% of pigs from one particular farm were found at slaughter to have one or more nodules...... in the muscles of the neck (group slaughtered). The pigs had been injected with a vaccine containing 40 mg/2 ml dose of aluminium hydroxide as adjuvant. Research consisted of two phases: first, an epidemiological study was carried out, aimed at determining the risk factors for the granulomas. The results...... and adjuvant) to pigs inoculated twice with apyrogenic bi-distilled water (group water) and to pigs inoculated once with the adjuvant and once with apyrogenic bi-distilled water (group adjuvant/water). Both studies agreed in their conclusions, which indicate that the high amount of aluminium hydroxide...

  7. The binding of phosphonic acids at aluminium oxide surfaces and correlation with passivation of aluminium flake.

    Science.gov (United States)

    Cooper, Rachel J; Camp, Philip J; Henderson, David K; Lovatt, Paul A; Nation, David A; Richards, Stuart; Tasker, Peter A

    2007-04-07

    Measurements of adsorption isotherms of a series of thirteen mono- and di-phosphonic acids have shown that these bind strongly to the surface of high surface area aluminium trihydroxide. The incorporation of such phosphonates into a suspension of aluminium flake in an aqueous medium, modelling the continuous phase of a water-based paint, greatly suppresses the evolution of hydrogen. Whilst strong binding of the phosphonate to aluminium oxides is an essential criterion for good passivation, other factors such as the hydrophobicity of the ligand are also important in suppressing hydrogen-evolution.

  8. Diamond grooving of rapidly solidified optical aluminium

    Science.gov (United States)

    Abou-El-Hossein, Khaled; Hsu, Wei-Yao; Ghobashy, Sameh; Cheng, Yuan-Chieh; Mkoko, Zwelinzima

    2015-10-01

    Traditional optical aluminium grades such as Al 6061 are intensively used for making optical components for applications ranging from mould insert fabrication to laser machine making. However, because of their irregular microstructure and relative inhomogeneity of material properties at micro scale, traditional optical aluminium may exhibit some difficulties when ultra-high precision diamond turned. Inhomogeneity and micro-variation in the material properties combined with uneven and coarse microstructure may cause unacceptable surface finish and accelerated tool wear, especially in grooving operation when the diamond tool edge is fully immersed in the material surface. Recently, new grades of optical aluminium that are featured by their ultra-fine microstructure and improved material properties have been developed to overcome the problem of high tool wear rates. The new aluminium grades have been developed using rapid solidification process which results in extremely small grain sizes combined with improved mechanical properties. The current study is concerned with investigating the performance of single-point diamond turning when grooving two grades of rapidly solidified aluminium (RSA) grades: RSA905 which is a high-alloyed aluminium grade and RSA443 which has a high silicon content. In this study, two series of experiments employed to create radial microgrooves on the two RSA grades. The surface roughness obtained on the groove surface is measured when different combinations of cutting parameters are used. Cutting speed is varied while feed rate and depth of cut were kept constant. The results show that groove surface roughness produced on RSA443 is higher than that obtained on RSA905. Also, the paper reports on the effect of cutting speed on surface roughness for each RSA grade.

  9. Spin-phonon coupling and ferroelectricity in magnetoelectric gallium ferrite

    Science.gov (United States)

    Mukherjee, Somdutta

    2014-03-01

    Gallium ferrite (GaFeO3 or GFO) is a low temperature ferrimagnet and room temperature piezoelectric wherein the magnetic transition temperature (TC) could be tailored to room temperature and above by tuning the stoichiometry and processing conditions. Such tunability of the magnetic transition temperature renders GFO a unique perspective in the research of multiferroics to potentially demonstrate room temperature magnetoelectric effect attractive for futuristic digital memory applications. Recent studies in several transition metal oxides highlight the importance of spin-phonon coupling in designing novel multiferroics by means of strain induced phase transition. In the present work, we have systematically studied the evolution of phonons in good quality samples of GFO across the TC using Raman spectroscopy. Using the phonon softening behavior and nearest neighbor spin-spin correlation function below TC we estimated spin-phonon coupling strength in the magnetically ordered state. In the process, we also show, for the first time, the presence of a spin glass phase in GFO where the spin-glass transition has a signature of abrupt change in spin-phonon coupling strength. Though GFO is piezoelectric and crystallizes in polar Pc21n symmetry, its ferroelectric nature remained controversial probably due to the large leakage current in the bulk material. To address this issue, we deposited epitaxial thin film on single crystalline yttria stabilized zirconia (YSZ) substrate using indium tin oxide (ITO) as a bottom conducting layer. We demonstrate clear evidence of room temperature ferroelectricity in the thin films from the 180o phase shift of the piezoresponse upon switching the electric field. Further, suppression of dielectric anomaly in presence of an external magnetic field clearly reveals a pronounced magneto-dielectric coupling across the magnetic transition temperature. In addition, using first principles calculations we elucidate that Fe ions are not only

  10. New aluminium alloys with high lithium content

    Energy Technology Data Exchange (ETDEWEB)

    Schemme, K.; Velten, B.

    1989-06-01

    Since the early 80's there have been made great efforts to replace the high strength aluminium alloys for the aircraft and space industry by a new generation of aluminium-lithium alloys. The attractivity of this kind of alloys could be increased by a further reduction of their density, caused by an increasing lithium content (/ge/ 5 wt.% Li). Therefore binary high-lithium containing alloys with low density are produced and metallografically investigated. A survey of their strength and wear behavior is given by using tensile tests and pin abrasing tests. (orig.).

  11. Benchmarking of Evaluated Neutron Data for Gallium Sample

    Institute of Scientific and Technical Information of China (English)

    HAN; Rui; NIE; Yang-bo; RUAN; Xi-chao; BAO; Jie; REN; Jie; HUANG; Han-xiong; LI; Xia; ZHANG; Kai; ZHOU; Zu-ying

    2013-01-01

    Gallium(Ga)is a kind of target material and an important fission product.It has the characteristics of low melting point and high boiling point.The integral experimental study on Gallium data is an important issue.It has an important application for design of reactors and ADS(Accelerator Driven System)

  12. Myopericarditis in acquired immunodeficiency syndrome diagnosed by gallium scintigraphy

    Energy Technology Data Exchange (ETDEWEB)

    Cregler, L.L.; Sosa, I.; Ducey, S.; Abbey, L. (Bronx VA Medical Center, NY (USA))

    1990-07-01

    Myocarditis is among the cardiac complications of acquired immunodeficiency syndrome and, yet, is often not discovered until autopsy. Gallium scintigraphy has been employed in diagnosing this entity, but few data are available about its diagnostic accuracy and value. Here, the authors report two cases of myopericarditis as diagnosed by gallium scan.

  13. China’s Aluminium Consumption and the Related Policies

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    <正>China is a major aluminium consumer country in the world. In 2005, China produced 7.81 million tons aluminium and imported 640,000 tons. Meanwhile, China also exported 1.32 million tons aluminium in 2005. China’s apparent consumption of aluminium in 2005 was about 7.1 million tons, which was 9.3 times over that in 1990. China’s aluminium consumption growth has kept at an annual average of 16.1 per cent since 1990, which makes China the

  14. China’s Production and Market of Aluminium Extruded Profiles

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    <正>Chinese aluminium extrusion industry came into existence at the early 1950s with most products used in military industry and national defence.At the beginning of 1980s,the produc- tion of construction aluminium profiles started simultaneously in North and South China.In the following thirty years,the aluminium extru- sion industry entered into a quickly developing stage with a focus on construction aluminium profiles.With the blooming real estate industry, the demand for construction aluminium profiles from the domestic market has a tendency of yearly increase.From 2000,the quick devel- opments of China’s auto and railway vehicle

  15. Challenges in LCA modelling of multiple loops for aluminium cans

    DEFF Research Database (Denmark)

    Niero, Monia; Olsen, Stig Irving

    packaging scrap sources (i.e. used beverage can and mixed aluminium packaging) to understand the limiting factors for multiple loop aluminium can recycling. Secondly, we performed a comparative LCA of aluminium can production and recycling in multiple loops considering the two aluminium packaging scrap...... this information to perform an LCA of 30 recycling loops based on the actual alloy composition. From the comparative LCA the closed product loop option (i.e. using used beverage can scraps) turned out to have lower environmental impact than the open loop option (i.e. using mixed aluminium packaging scraps...

  16. Aluminium: a natural adjuvant in Leishmania transmission via sand flies?

    Science.gov (United States)

    Maingon, Rhayza; Khela, Amandeep; Sampson, Christopher; Ward, Richard; Walker, Karen; Exley, Christopher

    2008-11-01

    Genetically identical Leishmania chagasi/infantum parasites cause both atypical cutaneous leishmaniasis and visceral leishmaniasis. In this report we have tested the first part of a hypothesis that states that the form of this disease that is manifested depends upon the adjuvant-like activity of aluminium of dietary origin accumulated in the salivary gland of the sand fly vector. In sand flies fed aluminium-supplemented sucrose we have used histochemistry to qualitatively identify aluminium in their salivary glands and graphite furnace atomic absorption spectrometry to quantify the aluminium content of dissected salivary glands. Aluminium may be acting as a natural adjuvant in some forms of leishmaniasis.

  17. Sorption of indium (III) onto carbon nanotubes.

    Science.gov (United States)

    Alguacil, F J; Lopez, F A; Rodriguez, O; Martinez-Ramirez, S; Garcia-Diaz, I

    2016-08-01

    Indium has numerous applications in different industrial sectors and is not an abundant element. Therefore appropriate technology to recover this element from various process wastes is needed. This research reports high adsorption capacity of multiwalled carbon nanotubes (MWCNT) for In(III). The effects of pH, kinetics, isotherms and adsorption mechanism of MWCNT on In(III) adsorption were investigated and discussed in detail. The pH increases improves the adsorption capacity for In(III). The Langmuir adsorption model is the best fit with the experimental data. For the kinetic study, the adsorption onto MWCNT could be fitted to pseudo second-order. The adsorption of indium(III) can be described to a mechanism which consists of a film diffusion controlled process. Metal desorption can be achieved with acidic solutions.

  18. Recovery of indium and lead from lead bullion

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Lead and indium were recovered by electrolysis and nonequilibrium solvent extraction process from lead bullion.The effects of current density,electrolytic period and circle amnant of electrolyte on the electrochemical dissolution of lead and indium were investigated.The effects of extraction phase ratio and mixing time on solvent extraction of indium and striping phase ratio and stripping stage on the loaded organic phase stripping were also investigated.The experimental results indicate that under optimum conditions,the purity of lead deposited on cathode is 98.5% and the deposit rate of lead is 99.9%,the dissolution rate of indium is 94.28%,the extraction rate of indium is 98.69%,the stripping rate of indium is almost 100%,and the impurity elements,such as Zn,Fe and Sn can be removed.

  19. Nuclear microprobe imaging of gallium nitrate in cancer cells

    Science.gov (United States)

    Ortega, Richard; Suda, Asami; Devès, Guillaume

    2003-09-01

    Gallium nitrate is used in clinical oncology as treatment for hypercalcemia and for cancer that has spread to the bone. Its mechanism of antitumor action has not been fully elucidated yet. The knowledge of the intracellular distribution of anticancer drugs is of particular interest in oncology to better understand their cellular pharmacology. In addition, most metal-based anticancer compounds interact with endogenous trace elements in cells, altering their metabolism. The purpose of this experiment was to examine, by use of nuclear microprobe analysis, the cellular distribution of gallium and endogenous trace elements within cancer cells exposed to gallium nitrate. In a majority of cellular analyses, gallium was found homogeneously distributed in cells following the distribution of carbon. In a smaller number of cells, however, gallium appeared concentrated together with P, Ca and Fe within round structures of about 2-5 μm diameter located in the perinuclear region. These intracellular structures are typical of lysosomial material.

  20. Gallium-containing hydroxyapatite for potential use in orthopedics

    Energy Technology Data Exchange (ETDEWEB)

    Melnikov, P., E-mail: petrmelnikov@yahoo.com [Department of Clinical Surgery, Faculty of Medicine, Federal University of Mato Grosso do Sul, Campo Grande, Mato Grosso do Sul (Brazil); Teixeira, A.R.; Malzac, A. [Department of Clinical Surgery, Faculty of Medicine, Federal University of Mato Grosso do Sul, Campo Grande, Mato Grosso do Sul (Brazil); Coelho, M. de B. [Brazilian Agricultural Research Corporation - EMBRAPA (Brazil)

    2009-09-15

    A novel material that may be recommended for grafts and implants stimulating bone growth has been obtained by introducing gallium ions (up to 11.0 mass%) into crystalline lattice of hydroxyapatite. The doping was carried out using gallium nitrate and sodium gallate solutions. In both cases, lattice parameters of gallium-doped hydroxyapatite are identical to those of pure synthetic hydroxyapatite. Gallium does not replace calcium as a result of heterovalent substitution and consequently produces no distortions in the framework of hydroxyapatite matrix. It remains strongly fixed in the form of solid solution of intercalation. According to scanning electron microscopy images gallium insertion does not cause any morphological alterations in hydroxyapatite structure and the product developed meets physico-chemical criteria for biomaterial to be employed in orthopedic practice and local handling of traumatic injuries. Its future usage opens the opportunity to enhance osteosynthesis and calcium retention in loco.

  1. Thermal Plasma Synthesis of Crystalline Gallium Nitride Nanopowder from Gallium Nitrate Hydrate and Melamine

    Directory of Open Access Journals (Sweden)

    Tae-Hee Kim

    2016-02-01

    Full Text Available Gallium nitride (GaN nanopowder used as a blue fluorescent material was synthesized by using a direct current (DC non-transferred arc plasma. Gallium nitrate hydrate (Ga(NO33∙xH2O was used as a raw material and NH3 gas was used as a nitridation source. Additionally, melamine (C3H6N6 powder was injected into the plasma flame to prevent the oxidation of gallium to gallium oxide (Ga2O3. Argon thermal plasma was applied to synthesize GaN nanopowder. The synthesized GaN nanopowder by thermal plasma has low crystallinity and purity. It was improved to relatively high crystallinity and purity by annealing. The crystallinity is enhanced by the thermal treatment and the purity was increased by the elimination of residual C3H6N6. The combined process of thermal plasma and annealing was appropriate for synthesizing crystalline GaN nanopowder. The annealing process after the plasma synthesis of GaN nanopowder eliminated residual contamination and enhanced the crystallinity of GaN nanopowder. As a result, crystalline GaN nanopowder which has an average particle size of 30 nm was synthesized by the combination of thermal plasma treatment and annealing.

  2. Irradiation damage in aluminium single crystals produced by 50-keV aluminium and copper ions

    DEFF Research Database (Denmark)

    Henriksen, L.; Johansen, A.; Koch, J.;

    1968-01-01

    Aluminium single crystals, thin enough to be examined by electron microscopy, have been irradiated with 50-keV aluminium and copper ions. The irradiation fluxes were in the range 1011–1014 cm−2 s−1 and the doses were from 6 × 1012 to 6 × 1014 cm−2. Irradiation along either a or a direction produc...

  3. Flexural buckling of fire exposed aluminium columns

    NARCIS (Netherlands)

    Maljaars, J.; Twilt, L.; Soetens, F.

    2009-01-01

    In order to study buckling of fire exposed aluminium columns, a finite element model is developed. The results of this model are verified with experiments. Based on a parametric study with the finite element model, it is concluded that the simple calculation model for flexural buckling of fire expos

  4. Aluminium building and civil engineering structures

    NARCIS (Netherlands)

    Soetens, F.; Mennink, J.

    1999-01-01

    The design of aluminium structures in building and civil engineering applications is different from designing in traditional materials. This difference is based on the physical and mechanical properties of the material and the freedom of cross-sectional shape provided by the extrusion manufacturing

  5. Dissolved aluminium in the Southern Ocean

    NARCIS (Netherlands)

    Middag, R.; van Slooten, C.; de Baar, H. J. W.; Laan, P.

    2011-01-01

    Dissolved aluminium (Al) occurs in a wide range of concentrations in the world oceans. The concentrations of Al in the Southern Ocean are among the lowest ever observed. An all-titanium CTD sampling system makes it possible to study complete deep ocean sections of Al and other trace elements with th

  6. Aluminium overhead highway traffic sign structures

    NARCIS (Netherlands)

    Courage, W.M.G.; Soetens, F.; Noordzij, R.; Drabbels, J.

    1998-01-01

    This paper deals with the design and manufacturing of aluminium overhead sign structures. These gantries are built up by using two X-shaped column frames connected by a triangular space frame girder. Slenderness and a low solidity ratio were objectives in the architectonic design. Braces and main ch

  7. Steam generated conversion coating on aluminium alloys

    DEFF Research Database (Denmark)

    Din, Rameez Ud; Jellesen, Morten Stendahl; Ambat, Rajan

    pressure steam produced by an autoclave at a temperature of 107 – 121 °C and pressure of 15 -17 psi for 10 minutes to produce a thin coating of aluminium oxide. The aim of this study is to understand the effect of high pressure steam with and without different chemical additives on surface morphology...

  8. Molecular breeding of cereals for aluminium resistance

    Science.gov (United States)

    Aluminium (Al3+) toxicity is the primary factor limiting crop production on acidic soils worldwide. In addition to an application of lime for soil amelioration, Al3+ resistant plant varieties have been deployed to raise productivity on such hostile soils. This has been possible due to the exploita...

  9. Indentation of aluminium foam at low velocity

    Directory of Open Access Journals (Sweden)

    Shi Xiaopeng

    2015-01-01

    Full Text Available The indentation behaviour of aluminium foams at low velocity (10 m/s ∼ 30 m/s was investigated both in experiments and numerical simulation in this paper. A flat-ended indenter was used and the force-displacement history was recorded. The Split Hopkinson Pressure bar was used to obtain the indentation velocity and forces in the dynamic experiments. Because of the low strength of the aluminium foam, PMMA bar was used, and the experimental data were corrected using Bacon's method. The energy absorption characteristics varying with impact velocity were then obtained. It was found that the energy absorption ability of aluminium foam gradually increases in the quasi-static regime and shows a significant increase at ∼10 m/s velocity. Numerical simulation was also conducted to investigate this process. A 3D Voronoi model was used and models with different relative densities were investigated as well as those with different failure strain. The indentation energy increases with both the relative density and failure strain. The analysis of the FE model implies that the significant change in energy absorption ability of aluminium foam in indentation at ∼10 m/s velocity may be caused by plastic wave effect.

  10. Preparation for Ultra High Pure Indium Metal for Optoelectronic Applications

    Directory of Open Access Journals (Sweden)

    Shashwat V. Joshi

    2014-11-01

    Full Text Available Ultra high pure Indium metal is extensively used in optoelectronic devices. Indium and its alloys become potential candidates in aerospace, defense and communication sectors. Purification of Indium has been done by Instrolec-200 Refiner followed by Directional Melting/ Freezing and Solidification Systems. Major targeted impurities are Metallic impurities Ag, Al, As, Bi, Ca, Cu, Fe, Ga, Ge, Mg, Pb, Sb, Si, Sn, and Zn. Purified Indium is characterized by analytical techniques Inductively Coupled Plasma- Optical Emission Spectrophotometry and Inductively Coupled Plasma- Mass Spectrometry.

  11. InP (Indium Phosphide): Into the future

    Science.gov (United States)

    Brandhorst, Henry W., Jr.

    1989-01-01

    Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide.

  12. Patterned gallium surfaces as molecular mirrors.

    Science.gov (United States)

    Bossi, Alessandra; Rivetti, Claudio; Mangiarotti, Laura; Whitcombe, Michael J; Turner, Anthony P F; Piletsky, Sergey A

    2007-09-30

    An entirely new means of printing molecular information on a planar film, involving casting nanoscale impressions of the template protein molecules in molten gallium, is presented here for the first time. The metallic imprints not only replicate the shape and size of the proteins used as template. They also show specific binding for the template species. Such a simple approach to the creation of antibody-like properties in metallic mirrors can lead to applications in separations, microfluidic devices, and the development of new optical and electronic sensors, and will be of interest to chemists, materials scientists, analytical specialists, and electronic engineers.

  13. Characterization and modeling of the intrinsic properties of 1.5-micrometer gallium indium nitrogen arsenic antimonide/gallium arsenide laser

    Science.gov (United States)

    Goddard, Lynford

    2005-12-01

    Low cost access to optical communication networks is needed to satisfy the rapidly increasing demands of home-based high-speed Internet. Existing light sources in the low-loss 1.2--1.6mum telecommunication wavelength bandwidth are prohibitively expensive for large-scale deployment, e.g. incorporation in individual personal computers. Recently, we have extended the lasing wavelength of room-temperature CW GaInNAs(Sb) lasers grown monolithically on GaAs by MBE up to 1.52mum in an effort to replace the traditional, more expensive, InP-based devices. Besides lower cost wafers, GaInNAs(Sb) opto-electronic devices have fundamental material advantages over InP-based devices: a larger conduction band offset which reduces temperature sensitivity and enhances differential gain, a lattice match to a material with a large refractive index contrast, i.e. AlAs, which decreases the necessary number of mirror pairs in DBRs for VCSELs, and native oxide apertures for current confinement. High performance GaInNAs(Sb) edge-emitting lasers, VCSELs, and DFB lasers have been demonstrated throughout the entire telecommunication band. In this work, we analyze the intrinsic properties of the GaInNAsSb material system, e.g. recombination, gain, band structure and renormalization, and efficiency. Theoretical modeling is performed to calculate a map of the bandgap and effective masses for various material compositions. We also present device performance results, such as: room temperature CW threshold densities below 450A/cm2, quantum efficiencies above 50%, and over 425mW of total power from a SQW laser when mounted epi-up and minimally packaged. These results are generally 2--4x better than previous world records for GaAs based devices at 1.5mum. The high CW power and low threshold exhibited by these SQW lasers near 1.5mum make feasible many novel applications, such as broadband Raman fiber amplifiers and uncooled WDM at the chip scale. Device reliability of almost 500 hours at 200mW CW output power has also been demonstrated. Comparative experiments using innovative characterization techniques, such as: the multiple section absorption/gain method to explore the band structure, as well as the Z-parameter to analyze the dominant recombination processes, have identified the physical mechanisms responsible for improved performance. Also, by measuring the temperature dependence of relevant laser parameters, we have been able to simulate device operation while varying temperature and device geometry.

  14. Aluminium in brain tissue in familial Alzheimer's disease.

    Science.gov (United States)

    Mirza, Ambreen; King, Andrew; Troakes, Claire; Exley, Christopher

    2017-03-01

    The genetic predispositions which describe a diagnosis of familial Alzheimer's disease can be considered as cornerstones of the amyloid cascade hypothesis. Essentially they place the expression and metabolism of the amyloid precursor protein as the main tenet of disease aetiology. However, we do not know the cause of Alzheimer's disease and environmental factors may yet be shown to contribute towards its onset and progression. One such environmental factor is human exposure to aluminium and aluminium has been shown to be present in brain tissue in sporadic Alzheimer's disease. We have made the first ever measurements of aluminium in brain tissue from 12 donors diagnosed with familial Alzheimer's disease. The concentrations of aluminium were extremely high, for example, there were values in excess of 10μg/g tissue dry wt. in 5 of the 12 individuals. Overall, the concentrations were higher than all previous measurements of brain aluminium except cases of known aluminium-induced encephalopathy. We have supported our quantitative analyses using a novel method of aluminium-selective fluorescence microscopy to visualise aluminium in all lobes of every brain investigated. The unique quantitative data and the stunning images of aluminium in familial Alzheimer's disease brain tissue raise the spectre of aluminium's role in this devastating disease.

  15. Microemulsion extraction separation and determination of aluminium species by spectrofluorimetry.

    Science.gov (United States)

    Lu, Jusheng; Tian, Jiuying; Guo, Na; Wang, Yan; Pan, Yichun

    2011-01-30

    A simple and sensitive microemulsion extraction separation method was developed for the speciation of aluminium in tea samples by spectrofluorimetry. With 8-hydroxyquinoline (8-HQ) as the chelating agent and Triton X-100 Winsor II microemulsion as the extractant, separation of aluminium species in different pH solutions was achieved by microemulsion extraction. The formation of microemulsion, the conditions of extraction and determination of aluminium species were studied. The results showed that, the contents of aluminium species in tea leaves and infusions samples, such as total aluminium, total soluble aluminium, total granular aluminium, inorganic aluminium except Al-F, and (Al-F+Al-org), were obtained successfully under the optimal conditions. The limit of detection was 0.23 μg L(-1) in pH 9.5 solution, and 0.59 μg L(-1) in pH 6.0 solution respectively; the precision (RSD) for 11 replicate measurements of 10 μg L(-1) aluminium was 2.1% in pH 9.5 solution, and 2.8% in pH 6.0 solution respectively; the recoveries for the spiked samples were 96.8-103.5%. The proposed method is simple and efficient, which has been applied to the speciation of aluminium in tea samples with satisfactory results.

  16. The effect of gallium nitrate on synoviocyte MMP activity.

    Science.gov (United States)

    Panagakos, F S; Kumar, E; Venescar, C; Guidon, P

    2000-02-01

    Gallium, a group IIIa metal salt, has been demonstrated to be an effective immunosuppressive agent. Gallium has also been shown to inhibit the production of inflammatory cytokines, such as IL-1beta, produced by macrophage-like cells in vitro. To further characterize the effects of gallium on the inflammatory process, we examined the effects of gallium nitrate on matrix metalloproteinase (MMP) activity utilizing the rabbit synoviocyte cell line HIG-82. HIG-82 cells were incubated with IL-1beta and TPA, with and without increasing concentrations of gallium nitrate. Conditioned medium was collected and assayed for MMP activity using a synthetic substrate and substrate gel zymography. IL-1beta and TPA alone induced MMP activity in HIG-82 cells. A dose-dependent inhibition of IL-1beta and TPA stimulated MMP activity by gallium nitrate at increasing concentrations was observed. This study demonstrates that gallium nitrate can inhibit the activity of MMPs and may be useful as a modulator of inflammation in arthritis.

  17. Compatibility of ITER candidate structural materials with static gallium

    Energy Technology Data Exchange (ETDEWEB)

    Luebbers, P.R.; Michaud, W.F.; Chopra, O.K.

    1993-12-01

    Tests were conducted on the compatibility of gallium with candidate structural materials for the International Thermonuclear Experimental Reactor, e.g., Type 316 SS, Inconel 625, and Nb-5 Mo-1 Zr alloy, as well as Armco iron, Nickel 270, and pure chromium. Type 316 stainless steel is least resistant to corrosion in static gallium and Nb-5 Mo-1 Zr alloy is most resistant. At 400{degrees}C, corrosion rates are {approx}4.0, 0.5, and 0.03 mm/yr for type 316 SS, Inconel 625, and Nb-5 Mo- 1 Zr alloy, respectively. The pure metals react rapidly with gallium. In contrast to findings in earlier studies, pure iron shows greater corrosion than nickel. The corrosion rates at 400{degrees}C are {ge}88 and 18 mm/yr, respectively, for Armco iron and Nickel 270. The results indicate that at temperatures up to 400{degrees}C, corrosion occurs primarily by dissolution and is accompanied by formation of metal/gallium intermetallic compounds. The solubility data for pure metals and oxygen in gallium are reviewed. The physical, chemical, and radioactive properties of gallium are also presented. The supply and availability of gallium, as well as price predictions through the year 2020, are summarized.

  18. Influence of water on the interfacial behavior of gallium liquid metal alloys.

    Science.gov (United States)

    Khan, Mohammad R; Trlica, Chris; So, Ju-Hee; Valeri, Michael; Dickey, Michael D

    2014-12-24

    Eutectic gallium indium (EGaIn) is a promising liquid metal for a variety of electrical and optical applications that take advantage of its soft and fluid properties. The presence of a rapidly forming oxide skin on the surface of the metal causes it to stick to many surfaces, which limits the ability to easily reconfigure its shape on demand. This paper shows that water can provide an interfacial slip layer between EGaIn and other surfaces, which allows the metal to flow smoothly through capillaries and across surfaces without sticking. Rheological and surface characterization shows that the presence of water also changes the chemical composition of the oxide skin and weakens its mechanical strength, although not enough to allow the metal to flow freely in microchannels without the slip layer. The slip layer provides new opportunities to control and actuate liquid metal plugs in microchannels-including the use of continuous electrowetting-enabling new possibilities for shape reconfigurable electronics, sensors, actuators, and antennas.

  19. Role of indium-111 white blood cells in inflammatory bowel disease

    Energy Technology Data Exchange (ETDEWEB)

    Froelich, J.W.; Field, S.A.

    1988-10-01

    Inflammatory bowel disease in patients may be difficult to diagnose because of the complex problems associated with this disease. Radionuclides are able to provide a rapid and effective method of imaging the bowel in patients with active inflammatory bowel disease. In the past, clinical work-ups have included barium x-ray studies and endoscopy. Scarring and fistula formation have made it difficult to determine between the active disease and abscesses that may occur. Gallium-67 (67Ga) has been very useful in imaging patients with inflammatory bowel disease, but the multiple-day imaging procedure has been a limitation for the clinicians when achieving a diagnosis. Recent results with Indium-111 (111In)--labeled WBCs have provided excellent correlation between clinical symptoms and colonoscopy findings in patients with inflammatory bowel disease. This technique has also allowed the differentiation between reoccurring inflammatory bowel disease and abscesses that accompany the disease within a 24-hour time period. The use of intravenous (IV) glucagon has increased the clarity of the images in the small bowel. Technetium 99m (99mTc) diethylenetriaminepentaacetic acid (DTPA) has been used in patients with inflammatory bowel disease demonstrating promising results. Investigators feel labelling 99mTc with WBCs will be improved, therefore yielding a greater efficiency, which will have a major impact on imaging patients with inflammatory bowel disease. Imaging patients with inflammatory bowel disease using radionuclides has yielded promising results. This is a significant advancement over barium radiography and endoscopy exams.24 references.

  20. Indium contamination from the indium-tin-oxide electrode in polymer light-emitting diodes

    NARCIS (Netherlands)

    Schlatmann, A.R.; Floet, D.W.; Hilberer, A; Garten, F; Smulders, P.J M; Klapwijk, T.M; Hadziioannou, G

    1996-01-01

    We have found that polymer light-emitting diodes (LEDs) contain high concentrations of metal impurities prior to operation. Narrow peaks in the electroluminescence spectrum unambiguously demonstrate the presence of atomic indium and aluminum. Rutherford backscattering spectroscopy (RBS) and x-ray ph

  1. Selective separation of indium by iminodiacetic acid chelating resin

    Directory of Open Access Journals (Sweden)

    M. C. B. Fortes

    2007-06-01

    Full Text Available Indium can be recovered by treating residues, flue dusts, slags, and metallic intermediates in zinc smelting. This paper investigates the adsorption characteristics of indium and iron on an iminodiacetic acid chelating resin, Amberlite®IRC748 (Rohm and Haas Co.-USA. High concentrations of iron are always present in the aqueous feed solution of indium recovery. In addition, the chemical behaviour of iron in adsorptive systems is similar to that of indium. The metal concentrations in the aqueous solution were based on typical indium sulfate leach liquor obtained from zinc hydrometallurgical processing in a Brazilian plant. The ionic adsorption experiments were carried out by the continuous column method. Amberlite®IRC748 resin had a high affinity for indium under acidic conditions. Indium ions adsorbed onto the polymeric resin were eluted with a 0.5mol/dm³ sulphuric acid solution passed through the resin bed in the column. 99.5% pure indium sulfate aqueous solution was obtained using the iminodiacetic acid chelating resin Amberlite®IRC748.

  2. Two-Step Plasma Process for Cleaning Indium Bonding Bumps

    Science.gov (United States)

    Greer, Harold F.; Vasquez, Richard P.; Jones, Todd J.; Hoenk, Michael E.; Dickie, Matthew R.; Nikzad, Shouleh

    2009-01-01

    A two-step plasma process has been developed as a means of removing surface oxide layers from indium bumps used in flip-chip hybridization (bump bonding) of integrated circuits. The two-step plasma process makes it possible to remove surface indium oxide, without incurring the adverse effects of the acid etching process.

  3. Selective separation of indium by iminodiacetic acid chelating resin

    Energy Technology Data Exchange (ETDEWEB)

    Fortes, M.C.B.; Benedetto, J.S. [Centro de Desenvolvimento da Tecnologia Nuclear (CDTN/CNEN-MG), Belo Horizonte, MG (Brazil); Martins, A.H. [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Engenharia Metalurgica e de Materiais]. E-mail: ahmartin@demet.ufmg.br

    2007-04-15

    - Indium can be recovered by treating residues, flue dusts, slags, and metallic intermediates in zinc smelting. This paper investigates the adsorption characteristics of indium and iron on an iminodiacetic acid chelating resin, Amberlite{sup R} IRC748 (Rohm and Haas Co.-USA). High concentrations of iron are always present in the aqueous feed solution of indium recovery. In addition, the chemical behaviour of iron in adsorptive systems is similar to that of indium. The metal concentrations in the aqueous solution were based on typical indium sulfate leach liquor obtained from zinc hydrometallurgical processing in a Brazilian plant. The ionic adsorption experiments were carried out by the continuous column method. Amberlite{sup R} IRC748 resin had a high affinity for indium under acidic conditions. Indium ions adsorbed onto the polymeric resin were eluted with a 0.5 mol/dm{sup 3} sulphuric acid solution passed through the resin bed in the column. 99.5% pure indium sulfate aqueous solution was obtained using the iminodiacetic acid chelating resin Amberlite{sup R} IRC748. (author)

  4. Feet sunk in molten aluminium: The burn and its prevention.

    Science.gov (United States)

    Alonso-Peña, David; Arnáiz-García, María Elena; Valero-Gasalla, Javier Luis; Arnáiz-García, Ana María; Campillo-Campaña, Ramón; Alonso-Peña, Javier; González-Santos, Jose María; Fernández-Díaz, Alaska Leonor; Arnáiz, Javier

    2015-08-01

    Nowadays, despite improvements in safety rules and inspections in the metal industry, foundry workers are not free from burn accidents. Injuries caused by molten metals include burns secondary to molten iron, aluminium, zinc, copper, brass, bronze, manganese, lead and steel. Molten aluminium is one of the most common causative agents of burns (60%); however, only a few publications exist concerning injuries from molten aluminium. The main mechanisms of lesion from molten aluminium include direct contact of the molten metal with the skin or through safety apparel, or when the metal splash burns through the pants and rolls downward along the leg. Herein, we report three cases of deep dermal burns after 'soaking' the foot in liquid aluminium and its evolutive features. This paper aims to show our experience in the management of burns due to molten aluminium. We describe the current management principles and the key features of injury prevention.

  5. What is the risk of aluminium as a neurotoxin?

    Science.gov (United States)

    Exley, Christopher

    2014-06-01

    Aluminium is neurotoxic. Its free ion, Al(3+) (aq), is highly biologically reactive and uniquely equipped to do damage to essential cellular (neuronal) biochemistry. This unequivocal fact must be the starting point in examining the risk posed by aluminium as a neurotoxin in humans. Aluminium is present in the human brain and it accumulates with age. The most recent research demonstrates that a significant proportion of individuals older than 70 years of age have a potentially pathological accumulation of aluminium somewhere in their brain. What are the symptoms of chronic aluminium intoxication in humans? What if neurodegenerative diseases such as Alzheimer's disease are the manifestation of the risk of aluminium as a neurotoxin? How might such an (outrageous) hypothesis be tested?

  6. Fabrication, structure and mechanical properties of indium nanopillars

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Gyuhyon; Kim, Ju-Young; Budiman, Arief Suriadi; Tamura, Nobumichi; Kunz, Martin; Chen, Kai; Burek, Michael J.; Greer, Julia R.; Tsui, Ting Y.

    2010-01-01

    Solid and hollow cylindrical indium pillars with nanoscale diameters were prepared using electron beam lithography followed by the electroplating fabrication method. The microstructure of the solid-core indium pillars was characterized by scanning micro-X-ray diffraction, which shows that the indium pillars were annealed at room temperature with very few dislocations remaining in the samples. The mechanical properties of the solid pillars were characterized using a uniaxial microcompression technique, which demonstrated that the engineering yield stress is {approx}9 times greater than bulk and is {approx}1/28 of the indium shear modulus, suggesting that the attained stresses are close to theoretical strength. Microcompression of hollow indium nanopillars showed evidence of brittle fracture. This may suggest that the failure mode for one of the most ductile metals can become brittle when the feature size is sufficiently small.

  7. Photoluminescence from Nd Doped Anodic Aluminium Oxide

    Institute of Scientific and Technical Information of China (English)

    ZHOU Zhang-Kai; PENG Xiao-Niu; SU Xiong-Rui; HAO Zhong-Hua

    2009-01-01

    We prepare Nd doped anodic aluminium oxide (Nd:AAO) template by using Nd doped aluminium foils through two-step anodization processes. Photoluminescence (PL) from the Nd:AAO template with the annealing temper-ature higher than 400℃ is observed, and the PL intensity enhanced with the increasing annealing temperature is found. We investigate the crystallization of Nd:AAO template and the excitation wavelength dependence of PL intensity, showing that the PL results from the Nd doped in the template. The approach presented may probably facilitate the fabricating of AAO with good light-emitting property, which can be used in fabrication of multifunctional nanosized films and may find applications in photonic devices.

  8. Nanoporous Aluminium Oxide Membranes as Cell Interfaces

    Directory of Open Access Journals (Sweden)

    Dorothea Brüggemann

    2013-01-01

    Full Text Available Nanoporous anodic aluminium oxide (AAO has become increasingly important in biomedical applications over the past years due to its biocompatibility, increased surface area, and the possibility to tailor this nanomaterial with a wide range of surface modifications. AAO nanopores are formed in an inexpensive anodisation process of pure aluminium, which results in the self-assembly of highly ordered, vertical nanochannels with well-controllable pore diameters, depths, and interpore distances. Because of these outstanding properties AAO nanopores have become excellent candidates as nanostructured substrates for cell-interface studies. In this comprehensive review previous surveys on cell adhesion and proliferation on different AAO nanopore geometries and surface modifications are highlighted and summarised tabularly. Future applications of nanoporous alumina membranes in biotechnology and medicine are also outlined, for instance, the use of nanoporous AAO as implant modifications, coculture substrates, or immunoisolation devices.

  9. The Friction of Saline Ice on Aluminium

    Directory of Open Access Journals (Sweden)

    Christopher Wallen-Russell

    2016-01-01

    Full Text Available The friction of ice on other materials controls loading on offshore structures and vessels in the Arctic. However, ice friction is complicated, because ice in nature exists near to its melting point. Frictional heating can cause local softening and perhaps melting and lubrication, thus affecting the friction and creating a feedback loop. Ice friction is therefore likely to depend on sliding speed and sliding history, as well as bulk temperature. The roughness of the sliding materials may also affect the friction. Here we present results of a series of laboratory experiments, sliding saline ice on aluminium, and controlling for roughness and temperature. We find that the friction of saline ice on aluminium μice-al=0.1 typically, but that this value varies with sliding conditions. We propose physical models which explain the variations in sliding friction.

  10. Multiply-negatively charged aluminium clusters and fullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Walsh, Noelle

    2008-07-15

    Multiply negatively charged aluminium clusters and fullerenes were generated in a Penning trap using the 'electron-bath' technique. Aluminium monoanions were generated using a laser vaporisation source. After this, two-, three- and four-times negatively charged aluminium clusters were generated for the first time. This research marks the first observation of tetra-anionic metal clusters in the gas phase. Additionally, doubly-negatively charged fullerenes were generated. The smallest fullerene dianion observed contained 70 atoms. (orig.)

  11. Improvement of photodynamic activity of aluminium sulphophthalocyanine due to biotinylation

    Science.gov (United States)

    Meerovich, Irina G.; Jerdeva, Victoria V.; Derkacheva, Valentina M.; Meerovich, Gennadii A.; Lukyanets, Eugeny A.; Kogan, Eugenia A.; Savitsky, Alexander P.

    2003-09-01

    The photodynamic activity of dibiotinylated aluminium sulphophthalocyanine in vitro and in vivo were studied. It was obtained that in vitro dibiotinylated aluminium sulphophthalocyanine provides the effective damage of small cell lung carcinoma OAT-75. In vivo dibiotinylated aluminium sulphophthalocyanine causes destruction of tumor (Erlich carcinoma), results in total necrosis of tumor tissue and expresses vascular damage (trombosis and destruction of vascular walls) even in concentration 0.25 mg/kg of a body weight.

  12. Usage of Neural Network to Predict Aluminium Oxide Layer Thickness

    OpenAIRE

    2015-01-01

    This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of...

  13. Corrosion of Metal-Matrix Composites with Aluminium Alloy Substrate

    Directory of Open Access Journals (Sweden)

    B. Bobic

    2010-03-01

    Full Text Available The corrosion behaviour of MMCs with aluminium alloy matrix was presented. The corrosion characteristics of boron-, graphite-, silicon carbide-, alumina- and mica- reinforced aluminium MMCs were reviewed. The reinforcing phase influence on MMCs corrosion rate as well as on various corrosion forms (galvanic, pitting, stress corrosion cracking, corrosion fatique, tribocorrosion was discussed. Some corrosion protection methods of aluminium based MMCs were described

  14. Un-optimistic Prospects for the Westward Movement of Aluminium

    Institute of Scientific and Technical Information of China (English)

    2014-01-01

    <正>The westward movement of aluminium is essential for the industrial development.Up till now,the northwestern area has planned to construct more than 40 aluminium projects with a total production capacity of over 20 million tons.The future rate of progress of newly constructed projects are directly related to the supplies of the aluminium market,having critical guiding meaning for the trends of

  15. Wearing tests on aluminium coated with diamond by triboadhesion

    Institute of Scientific and Technical Information of China (English)

    J.M.RodríguezLelis; B.D.Angulo; J.O.Colín; J.PorcayoCalderón

    2001-01-01

    In this work the results obtained from subjecting aluminium coated with diamond by tri-boadhesion to a wearing process with a plane rider. Here it is shown the ratio of the normal toshearing forces, called friction factor, as an indication of the resistance of the surface. It was foundthat the film of the aluminium coated with diamond resisted three times compared with the oxida-tion film of commercial aluminium, which for the purpose of this work was considered withoutcoating.

  16. Friction factor of CP aluminium and aluminium–zinc alloys

    Indian Academy of Sciences (India)

    N Vidhya Sagar; K S Anand; A C Mithun; K Srinivasan

    2006-12-01

    Friction factor has been determined for CP aluminium and aluminium–zinc alloys using ring compression test at different temperatures from 303 K to 773 K. It is found that CP aluminium exhibits sticking whereas Al–Zn alloys do not exhibit sticking at elevated temperatures. Hot working of Al–Zn alloy is easier than that of CP aluminium at 773 K. As zinc content increases up to 10 wt% the friction factor decreases up to 0.02.

  17. Telangiectasia in aluminium workers: a follow up.

    OpenAIRE

    Thériault, G.; Gingras, S.; Provencher, S

    1984-01-01

    A five step investigation was carried out to gain a better understanding of the morbidity that accompanied the development of telangiectasia on aluminium workers and to find its cause. Fifty workers with multiple telangiectasia when matched with normal controls showed the same amount of illness except that evidence of ischaemia on the ECG was found in nine cases and one control. The cases did not show an excess of abnormal biochemical tests. The basic histopathological lesion affected the sur...

  18. Welding distortion of aluminium structural members

    Energy Technology Data Exchange (ETDEWEB)

    Goglio, L. [Politecnico di Torino (Italy). Dept. of Mech.; Gugliotta, A. [Politecnico di Torino (Italy). Dept. of Mech.; Pasquino, D. [Politecnico di Torino (Italy). Dept. of Mech.

    1996-12-31

    The paper deals with the angular distortion induced in aluminium tubular beams during welding to prepare T junctions. The research, based on experimental measurements, makes use of statistical methods to identify the parameters (beam section, weld length, welding direction, etc.) that influence the angular change. The results are discussed also considering a model known from the literature. It is found that the distortion is generally low and can be minimized by a proper welding process. (orig.)

  19. China will Reduce Aluminium Export in 2005

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    <正>Starting from January 1, 2005, China eliminated the 8 per cent export tax rebate for aluminium, and further more, the exporters will have to pay 5 per cent export tax. This is beyond the expectations of the producers, for most of them thought only the 8 per cent export tax rebate would be eliminated and it was still too early to add the export tax.

  20. Thermal formation of corundum from aluminium hydroxides prepared from various aluminium salts

    Indian Academy of Sciences (India)

    J Temuujin; Ts JADAMBAA; K J D Mackenzie; P Angerer; F Porte; F Riley

    2000-08-01

    Aluminium hydroxides have been precipitated from various aluminium salts and the differences in their thermal behaviour have been investigated. Pseudoboehmite derived from the nitrate, sulfate and chloride all form -Al2O3 at ∼ 400°C but the formation of -Al2O3 at 1200°C occurs more readily in the material derived from the sulfate. This contains a higher concentration of anionic impurities related to differences in the solubility of the original aluminium salts. The sulfate is retained in the gel to higher temperatures at which its eventual decomposition may lead to the formation of a reactive pore structure which facilitates the nucleation of -Al2O3.

  1. Structural engineering of nanoporous anodic aluminium oxide by pulse anodization of aluminium.

    Science.gov (United States)

    Lee, Woo; Schwirn, Kathrin; Steinhart, Martin; Pippel, Eckhard; Scholz, Roland; Gösele, Ulrich

    2008-04-01

    Nanoporous anodic aluminium oxide has traditionally been made in one of two ways: mild anodization or hard anodization. The first method produces self-ordered pore structures, but it is slow and only works for a narrow range of processing conditions; the second method, which is widely used in the aluminium industry, is faster, but it produces films with disordered pore structures. Here we report a novel approach termed "pulse anodization" that combines the advantages of the mild and hard anodization processes. By designing the pulse sequences it is possible to control both the composition and pore structure of the anodic aluminium oxide films while maintaining high throughput. We use pulse anodization to delaminate a single as-prepared anodic film into a stack of well-defined nanoporous alumina membrane sheets, and also to fabricate novel three-dimensional nanostructures.

  2. Synthesis of aluminium nanoparticles by arc evaporation of an aluminium cathode surface

    Indian Academy of Sciences (India)

    M Gazanfari; M Karimzadeh; S Ghorbani; M R Sadeghi; G Azizi; H Karimi; N Fattahi; Z Karimzadeh

    2014-06-01

    Aluminium nanoparticles (Al Nps) are synthesized using arc discharge method by applying direct current between aluminium electrodes in liquid environment without any use of vacuum equipment, heat exchangers, high temperatures furnaces and inert gases. After synthesis of Al Nps, in situ coating process on the nanoparticles was performed immediately. The effects of media on the yield and morphology of aluminium nanoparticles were investigated. Analysis result of the samples indicated that particle size was less than 30 nm, when 120 A/cm2 arc current was used. In addition, coating agent can affect arc velocity, arc stability, morphology and composition of the nanoparticles. Resultant nanoparticles were identified using X-ray powder diffraction (XRD), also their surface morphology was studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) and finally the accuracy of coating was assessed with infrared (IR) spectroscopy.

  3. Friction stir welding (FSW of aluminium foam sandwich panels

    Directory of Open Access Journals (Sweden)

    M. Bušić

    2016-07-01

    Full Text Available The article focuses on the influence of welding speed and tool tilt angle upon the mechanical properties at the friction stir welding of aluminium foam sandwich panels. Double side welding was used for producing butt welds of aluminium sandwich panels applying insertion of extruded aluminium profile. Such insertion provided lower pressure of the tool upon the aluminium panels, providing also sufficient volume of the material required for the weldment formation. Ultimate tensile strength and flexural strength for three-point bending test have been determined for samples taken from the welded joints. Results have confirmed anticipated effects of independent variables.

  4. A Reaction Coating on Aluminium Alloys by Laser Processing

    OpenAIRE

    1993-01-01

    An aluminium oxide layer of 100 µm in thickness has been successfully coated on aluminium alloy 6061 and pure aluminium using a powder mixture of silicon oxide and aluminium by laser processing. A strong Al/Al2O3 interface was formed. The exothermic chemical reaction between SiO2 and Al may promote the metal/oxide wetting and the formation of Al2O3 layer. This new approach of ceramic coating on metals using a chemical reaction of other ceramics with metals may be applied to other systems.

  5. Ellipsometric study of silicon nitride on gallium arsenide

    Science.gov (United States)

    Alterovitz, S. A.; Bu-Abbud, G. H.; Woollam, J. A.; Liu, D.; Chung, Y.; Langer, D.

    1982-01-01

    A method for optimizing the sensitivity of ellipsometric measurements for thin dielectric films on semiconductors is described in simple physical terms. The technique is demonstrated for the case of sputtered silicon nitride films on gallium arsenide.

  6. Indium-111 platelet scintigraphy in carotid disease

    Energy Technology Data Exchange (ETDEWEB)

    Branchereau, A.; Bernard, P.J.; Ciosi, G.; Bazan, M.; de Laforte, C.; Elias, A.; Bouvier, J.L.

    1988-07-01

    Forty-five patients (35 men, 10 women) undergoing carotid surgery had Indium-111 platelet scintigraphy as part of their preoperative work-up. Imaging was performed within three hours after injection of the Indium-111. A second series of views was obtained 24 hours later and repeated at 24 hour intervals for two days. Of 54 scintigrams, 22 were positive and 32 negative. Positive results were defined as a twofold or more increase in local activity on a visualized carotid after 24 hours. The sensitivity of the method was 41%, intraoperatively, and the specificity, 100%. The low sensitivity places this method behind sonography and duplex-scanning for screening patients for surgery. We believe that indications for platelet scintigraphy are limited to: 1. Repeated transient ischemic attacks in the same territory with minimal lesions on arteriography and non-homogeneous plaque on duplex scan; 2. Symptomatic patients being treated medically as a possible argument for surgery; 3. Determining therapeutic policy for patients having experienced a transient ischemic attack with a coexisting intracardiac thrombus.

  7. Clinical role of indium-111 antimyosin imaging

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, S.; Lahiri, A. (Northwich Park Hospital and Clinical Research Centre, Harrow (UK). Dept. of Cardiology Northwich Park Hospital and Clinical Research Centre, Harrow (UK). Div. of Cardiovascular Sciences)

    1991-11-01

    Myocyte necrosis occurs in ischaemic, inflammatory and toxic heart diseases and can be detected by indium 111 antimyosin imaging. This allows a non-invasive evaluation of the site, extent and quantitation of the severity of myocardial necrosis. Simultaneous imaging of perfusion in patients with myocardial infarction allows the differentiation of necrosed and perfused areas and the varying degrees of mismatch and overlap, which has prognostic significance. Indium 111 antimyosin imaging is useful in the assessment of patients with unstable angina and in those for whom the diagnosis of infarction or unstable angina is not clear. In suspected myocarditis, a positive scan indicates the necessity for endomyocardial biopsy to confirm inflammation, whereas a negative scan makes the diagnosis of myocarditis unlikely. Antimyosin imaging is not useful as a marker of rejection in the 1 year-post-transplant, but uptake after this period is associated with an increased rejection rate and is therefore an important tool in planning management strategies. Most patients on anthracycline treatment have demonstrable uptake, which is related to the cumulative dose and to the ejection fraction. Its role in this situation is as yet unclear. The use of new ligands and radioisotopes ({sup 99m}Tc) is likely to allow earlier imaging and produce improved quality. (orig.).

  8. Superlattice Intermediate Band Solar Cell on Gallium Arsenide

    Science.gov (United States)

    2015-02-09

    AFRL-RV-PS- AFRL-RV-PS- TR-2015-0048 TR-2015-0048 SUPERLATTICE INTERMEDIATE BAND SOLAR CELL ON GALLIUM ARSENIDE Alexandre Freundlich...SUBTITLE 5a. CONTRACT NUMBER FA9453-13-1-0232 Superlattice Intermediate Band Solar Cell on Gallium Arsenide 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER...band solar cell incorporating low dimensional structures made with dilute nitrogen alloys of III-V semiconductors is investigated theoretically and

  9. Handling characteristics of gallium alloy for dental restoration.

    Science.gov (United States)

    Mash, L K; Miller, B H; Nakajima, H; Collard, S M; Guo, I Y; Okabe, T

    1993-12-01

    The handling characteristics of a gallium alloy (Gallium Alloy GF) were compared to those of a spherical high-copper amalgam (Tytin). Ten dentists each restored four identical MO preparations in acrylic typodont teeth (no. 30), two with amalgam and two with gallium alloy. Each restoration was evaluated immediately following completion by the operator for six clinically relevant criteria. Each criterion was scored between 1 and 5, where 1 = very poor, 2 = poor, 3 = fair, 4 = good, and 5 = very good. Three two-sided Mann-Whitney tests were used to compare the median scores for significant differences (P < 0.05). The first test indicated no significant difference between scores for the first- and second-placed restorations, within criteria and within alloy type (n = 10). The second test indicated a significant difference between amalgam and gallium alloy, within criteria and within restoration sequence (n = 10), for each criterion except resistance to fracture during removal of the matrix band. The third test indicated a significant difference between amalgam and gallium alloy, within each criteria, combining scores for first- and second-placed restorations (n = 20). During simulated clinical placement, amalgam was rated significantly higher than gallium alloy in each handling characteristic evaluated.

  10. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    Energy Technology Data Exchange (ETDEWEB)

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

    1990-12-01

    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  11. Cathodoluminescence spectra of gallium nitride nanorods.

    Science.gov (United States)

    Tsai, Chia-Chang; Li, Guan-Hua; Lin, Yuan-Ting; Chang, Ching-Wen; Wadekar, Paritosh; Chen, Quark Yung-Sung; Rigutti, Lorenzo; Tchernycheva, Maria; Julien, François Henri; Tu, Li-Wei

    2011-12-14

    Gallium nitride [GaN] nanorods grown on a Si(111) substrate at 720°C via plasma-assisted molecular beam epitaxy were studied by field-emission electron microscopy and cathodoluminescence [CL]. The surface topography and optical properties of the GaN nanorod cluster and single GaN nanorod were measured and discussed. The defect-related CL spectra of GaN nanorods and their dependence on temperature were investigated. The CL spectra along the length of the individual GaN nanorod were also studied. The results reveal that the 3.2-eV peak comes from the structural defect at the interface between the GaN nanorod and Si substrate. The surface state emission of the single GaN nanorod is stronger as the diameter of the GaN nanorod becomes smaller due to an increased surface-to-volume ratio.

  12. Thickness dependent thermal conductivity of gallium nitride

    Science.gov (United States)

    Ziade, Elbara; Yang, Jia; Brummer, Gordie; Nothern, Denis; Moustakas, Theodore; Schmidt, Aaron J.

    2017-01-01

    As the size of gallium nitride (GaN) transistors is reduced in order to reach higher operating frequencies, heat dissipation becomes the critical bottleneck in device performance and longevity. Despite the importance of characterizing the physics governing the thermal transport in thin GaN films, the literature is far from conclusive. In this letter, we report measurements of thermal conductivity in a GaN film with thickness ranging from 15-1000 nm grown on 4H-SiC without a transition layer. Additionally, we measure the thermal conductivity in the GaN film when it is 1 μm-thick in the temperature range of 300 < T < 600 K and use a phonon transport model to explain the thermal conductivity in this film.

  13. A new synthesis process for aluminium nitride. Nouveau procede de synthese du nitrure d'aluminium

    Energy Technology Data Exchange (ETDEWEB)

    Haussonne, J.M. (CNET, Centre Lannion B, 22 (France)); Lostec, J. (CNET, Centre Lannion B, 22 (France)); Bertot, J.P. (CNET, Centre Lannion B, 22 (France)); Lostec, L. (CNET, Centre Lannion B, 22 (France)); Sadou, S. (CNET, Centre Lannion B, 22 (France))

    1993-04-01

    Thermodynamic considerations show that, even at room temperature, pure aluminium can react with nitrogen to form the aluminium nitride AlN. However, pure aluminium does not exist: it is always surrounded by an alumina shell that protects the metal from further reactions. Furthermore, in the hypothesis where one has been able to make aluminium react with nitrogen, an aluminium nitride shell will protect as well the metal core from further oxidation. Prompted by the Lanxide process allowing to form Al/Al[sub 2]O[sub 3] composites, we have mixed aluminium powders with lithium salts, and easily synthesized pure aluminium nitride by heating the mixed powders in nitrigen at temperatures ranging from 800 to 1200 C. Starting from aluminium powders with a specific area ranging from 0.3 to 4 m[sup 2]/g, we have been able to produce aluminium nitride with specific are ranging from 1 to 20 m[sup 2]/g. Mixed with Y[sub 2]O[sub 3]-CaO and sintered at 1720 C in N[sub 2], we obtained AlN ceramics owning 92% density and 160 W/m.K thermal conductivity. (orig.).

  14. Gallium Nitride Schottky betavoltaic nuclear batteries

    Energy Technology Data Exchange (ETDEWEB)

    Lu Min, E-mail: mlu2006@sinano.ac.c [Su zhou Institute of Nano-technology and Nano-bionics, CAS, Su zhou 215125 (China); Zhang Guoguang [China Institute of Atomic Energy, Beijing 102413 (China); Fu Kai; Yu Guohao [Su zhou Institute of Nano-technology and Nano-bionics, CAS, Su zhou 215125 (China); Su Dan; Hu Jifeng [China Institute of Atomic Energy, Beijing 102413 (China)

    2011-04-15

    Research highlights: {yields} Gallium Nitride nuclear batteries with Ni-63 are demonstrated for the first time. {yields} Open circuit voltage of 0.1 V and conversion efficiency of 0.32% have been obtained. {yields} The limited performance is due to thin effective energy deposition layer. {yields} The output power is expected to greatly increase with growing thick GaN films. -- Abstract: Gallium Nitride (GaN) Schottky betavoltaic nuclear batteries (GNBB) are demonstrated in our work for the first time. GaN films are grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD), and then GaN Schottky diodes are fabricated by normal micro-fabrication process. Nickel with mass number of 63 ({sup 63}Ni), which emits {beta} particles, is loaded on the GaN Schottky diodes to achieve GNBB. X-ray diffraction (XRD) and photoluminescence (PL) are carried out to investigate the crystal quality for the GaN films as grown. Current-voltage (I-V) characteristics shows that the GaN Schottky diodes are not jet broken down at -200 V due to consummate fabrication processes, and the open circuit voltage of the GNBB is 0.1 V and the short circuit current density is 1.2 nA cm{sup -2}. The limited performance of the GNBB is due to thin effective energy deposition layer, which is only 206 nm to absorb very small partial energy of the {beta} particles because of the relatively high dislocation density and carrier concentration. However, the conversion efficiency of 0.32% and charge collection efficiency (CCE) of 29% for the GNBB have been obtained. Therefore, the output power of the GNBB are expected to greatly increase with growing high quality thick GaN films.

  15. Preparation of 5N high purified indium by the method of chemical purification-electrolysis

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The application of indium requires high purity indium as material. 5N high purity indium had been prepared by the method of a combination of chemically smelting and electrolysis. Smelting time was 10 min, the abstraction rate of cadmium was 80%-90% when used solution of I2-KI and glycerine to smelt indium. 4N metal indium was used as anode, high purity indium as cathode, In2(SO4)3-H2SO4 system as electrolyte, and In content is 100 g/L, pH 2-3 and current density 80-100 A/m2. The thallium was removed by smelting indium using 15% NH4Cl-glycerine solution for 20 min and tin by smelting indium using NaOH and NaNO3 for 20 min. The removed rate of tin was 60%.The product quality of indium reached national standard of 5N high purity indium.

  16. Deep-UV plasmonics of indium (Conference Presentation)

    Science.gov (United States)

    Kumamoto, Yasuaki; Saito, Yuika; Taguchi, Atsushi; Honda, Mitsuhiro; Kawata, Satoshi

    2016-09-01

    Deep-UV (DUV) plasmonics can expand the possibilities of DUV-based techniques (i.e. UV lithography, UV spectroscopy, UV imaging, UV disinfection). Here we present that indium is useful for research of DUV plasmonics. According to dielectric function, indium and aluminum are low-loss, DUV plasmonic metals, of which the imaginary parts are far smaller than those of other metals (i.e. rhodium, platinum) in the DUV range. Additionally, the real parts in the whole DUV range are close to but smaller than -2, allowing efficient generation of surface plasmon polaritons on an indium or aluminum nanosphere. In comparison to aluminum, indium provides a distinctive feature for fabricating DUV-resonant substrates. It is highly apt to form a grainy deposition film on a standard, optically transparent substrate (i.e. fused silica). The surface plasmon resonance wavelength becomes promptly tailored by simply varying the deposition thickness of the films, resulting in different grain sizes. Thus, we fabricated indium-coated substrates having different plasmon resonance wavelengths by varying the deposition thicknesses from 10 to 50 nm. DUV resonance Raman scattering of adenine molecules was best enhanced using the 25 nm deposition thickness substrates by the factor of 2. Furthermore, the FDTD calculation simulated the electromagnetic field enhancement over a grainy, indium-coated fused silica substrate. Both results indicate how indium plays an indispensable role in study of DUV plasmonics.

  17. There is (still too much aluminium in infant formulas

    Directory of Open Access Journals (Sweden)

    Burrell Shelle-Ann M

    2010-08-01

    Full Text Available Abstract Background Infant formulas are sophisticated milk-based feeds for infants which are used as a substitute for breast milk. Historically they are known to be contaminated by aluminium and in the past this has raised health concerns for exposed infants. We have measured the aluminium content of a number of widely used infant formulas to determine if their contamination by aluminium and consequent issues of child health persists. Methods Samples of ready-made milks and powders used to make milks were prepared by microwave digestion of acid/peroxide mixtures and their aluminium content determined by THGA. Results The concentration of aluminium in ready-made milks varied from ca 176 to 700 μg/L. The latter concentration was for a milk for preterm infants. The aluminium content of powders used to make milks varied from ca 2.4 to 4.3 μg/g. The latter content was for a soya-based formula and equated to a ready-to-drink milk concentration of 629 μg/L. Using the manufacturer's own guidelines of formula consumption the average daily ingestion of aluminium from infant formulas for a child of 6 months varied from ca 200 to 600 μg of aluminium. Generally ingestion was higher from powdered as compared to ready-made formulas. Conclusions The aluminium content of a range of well known brands of infant formulas remains high and particularly so for a product designed for preterm infants and a soya-based product designed for infants with cow's milk intolerances and allergies. Recent research demonstrating the vulnerability of infants to early exposure to aluminium serves to highlight an urgent need to reduce the aluminium content of infant formulas to as low a level as is practically possible.

  18. Electrolytic deposition of aluminium-magnesium-alloys from electrolytes containing organo-aluminium complexes; Elektrolytische Abscheidung von Aluminium-Magnesium-Legierungen aus aluminiumorganischen Komplexelektrolyten

    Energy Technology Data Exchange (ETDEWEB)

    Lehmkuhl, H.; Mehler, K.; Bongard, H.; Tesche, B. [Max-Planck-Institut fuer Kohlenforschung, Muelheim an der Ruhr (Germany); Reinhold, B. [Audi AG, Ingolstadt (Germany). Technische Entwicklung

    2000-10-01

    The galvanic deposition of pure aluminium from fluoride-containing electrolytes has been developed further and for the first time aluminium and magnesium have been deposited from a toluene-solution of a halide-free organo-aluminium complex electrolyte. The rate of incorporation of magnesium can be controlled over a wide range by either adjusting the composition of the aluminium-magnesium anode or by using separate aluminium or magnesium anodic circuits. The current efficiency for both anode and cathode approaches 100%. The resulting coating is optically attractive and, depending upon the magnesium-content or the cathodic current density, can be formed as a dull or polished surface. Investigations using an electron microscope show that the surface, in contrast to that of pure aluminium, consists of spherical particles. The aluminium-magnesium coating provides excellent protection against the corrosion of magnesium components. Electrochemical investigations using, for example 25% by weight magnesium incorporation, indicate a pronounced passivity interval compared to the alloy AZ91hp. In contrast to galvanic zinc-plated and silicate-sealed examples, cyclic corrosion tests on screws simulating 10 years of exposure, show no corrosion. (orig.)

  19. Reclamation of gallium, indium and rare-earth elements from photovoltaics, lightning and electronic waste : Reclaim project and outlook

    NARCIS (Netherlands)

    Kleef, M. van; Bisselink, R.; Ansems, T.; Kopacek, B.

    2014-01-01

    Modern technologies for green electronics like photovoltaic systems and solidstate lighting require increasing amounts of scarce metals. Global demand and price of these materials is expected to increase significantly the coming decades. If not controlled well some of these resources may be exhauste

  20. Substrate engineering for defect reduction and microstructure control in the growth of indium arsenide on (100) gallium arsenide

    Science.gov (United States)

    Ganesan, Suryanarayanan

    The development of devices based on InAs, GaSb, and AlSb, semiconductors that possess narrow band-gaps and 0.61 nm lattice parameters, has been limited by the defects that ensue in epitaxial films that typically are grown on commercial semi-insulating, but 7% lattice-mismatched, GaAs substrates. The studies described in this dissertation investigate the application of a lateral epitaxial overgrowth technique for defect reduction and microstructure control to the InAs/GaAs heteroepitaxial system by exploring the development of microstructure at various stages of island and film growth in conventional and lateral overgrowth epitaxy (that is, on unpatterned and mask-patterned substrates, respectively). For a range of growth conditions, InAs films on unpatterned (100) GaAs substrates exhibit not only the threading dislocations characteristic of largely mismatched epitaxial films, but also systematic tilting within micron-scale InAs domains. Alteration of the pattern and magnitude of the tilt achieved by varying the growth conditions and/or introducing mask-patterned substrates suggest that not only chemical and kinetic, but also physical constraints can direct microstructural evolution during growth. Backscattered electron Kikuchi pattern-based orientation imaging was used to investigate the origin of the improved epitaxial alignment that is realized when InAs films were grown on mask-patterned (100) GaAs substrates. The island size at coalescence was shown to be critical in determining whether a single or two-fold, four-fold or six-fold epitaxial orientation relationship(s) is (are) present in the film. The evolution of tilt with increasing island size is attributed to the particulars of the misfit dislocation network that forms, which appears to evolve in this epitaxial system as the island grows, in accordance with a model proposed by Spencer and Tersoff [1,2]. Sub-micron (˜0.5 mum or less) island sizes at coalescence appear to lead to a single orientation aligned with the GaAs. This work shows that spatial constraints imposed at the early stages of growth, in this case through use of a mask-patterned substrate, can be used to promote coalescence at small island size as an alternative or parallel approach to setting growth conditions (temperature, precursor stoichiometry, etc.) in order to control the defect nucleation and microstructure. References. [1]. B.J. Spencer, and J. Tersoff, Appl. Phys. Lett. 77 (1997) 2533. [2]. B.J. Spencer, and J. Tersoff, Phys. Rev. B63 (2001) 205424.

  1. Infrared Response of Impurity Doped Silicon MOSFET’s (IRFET’S): Gold, Indium, and Gallium Doped and Applications

    Science.gov (United States)

    1976-11-01

    cooled to room temperature. The resulting gold concentration of approximately 2 x 10l5 cm-3 corresponds to the results of previous work with bulk silicon...on (100) orientation silicon p-type substrate of 1-2nScm resistivity and doped with a gold concentration of 2 x 101 cm 3 . The gate oxide of the MOSFET...intrinsic and highly resistive even at room temperature. As a consequence the gold-doped devices are of the type NI<NA, or have anI: impurity or gold

  2. Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tari, Alireza, E-mail: atari@uwaterloo.ca; Lee, Czang-Ho; Wong, William S. [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)

    2015-07-13

    Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO{sub 2}, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiN{sub x}, and (3) a PECVD SiO{sub x}/SiN{sub x} dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the V{sub o} concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiN{sub x} (high V{sub o}) and SiO{sub 2} (low V{sub o}) had the highest and lowest conductivity, respectively. A PECVD SiO{sub x}/SiN{sub x} dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer into the IGZO and resulted in higher resistivity films.

  3. Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

    Science.gov (United States)

    Tari, Alireza; Lee, Czang-Ho; Wong, William S.

    2015-07-01

    Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO2, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiNx, and (3) a PECVD SiOx/SiNx dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the Vo concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiNx (high Vo) and SiO2 (low Vo) had the highest and lowest conductivity, respectively. A PECVD SiOx/SiNx dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer into the IGZO and resulted in higher resistivity films.

  4. Robust and stretchable indium gallium zinc oxide-based electronic textiles formed by cilia-assisted transfer printing

    Science.gov (United States)

    Yoon, Jongwon; Jeong, Yunkyung; Kim, Heeje; Yoo, Seonggwang; Jung, Hoon Sun; Kim, Yonghun; Hwang, Youngkyu; Hyun, Yujun; Hong, Woong-Ki; Lee, Byoung Hun; Choa, Sung-Hoon; Ko, Heung Cho

    2016-06-01

    Electronic textile (e-textile) allows for high-end wearable electronic devices that provide easy access for carrying, handling and using. However, the related technology does not seem to be mature because the woven fabric hampers not only the device fabrication process directly on the complex surface but also the transfer printing of ultrathin planar electronic devices. Here we report an indirect method that enables conformal wrapping of surface with arbitrary yet complex shapes. Artificial cilia are introduced in the periphery of electronic devices as adhesive elements. The cilia also play an important role in confining a small amount of glue and damping mechanical stress to maintain robust electronic performance under mechanical deformation. The example of electronic applications depicts the feasibility of cilia for `stick-&-play' systems, which provide electronic functions by transfer printing on unconventional complex surfaces.

  5. Densification effects on solution-processed indium-gallium-zinc-oxide films and their thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Rim, You Seung; Kim, Hyun Jae [School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of)

    2014-09-15

    We report the effects of high-pressure annealing (HPA) on solution-processed InGaZnO (IGZO) thin-film transistors (TFTs). HPA increased the density of IGZO films. In particular, annealing in O{sub 2} at 1.0 MPa and 350 C resulted in a high-density and low-porosity IGZO film, as characterized using X-ray reflectivity (XRR) and ellipsometry measurements. This was attributed to the oxidative and compressive effects on the oxygen-deficient solution-processed IGZO film. TFTs annealed in O{sub 2} at 1.0 MPa and 350 C exhibited an increase in the field-effect mobility by a factor of approximately five compared with TFTs annealed in air at 0.1 MPa and 350 C. Furthermore, improvements in reliability under negative and positive bias stresses were also observed following HPA. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Epitaxial growth of III-V nitrides and phase separation and ordering in indium gallium nitride alloys

    Science.gov (United States)

    Doppalapudi, Dharanipal

    The family of III-V nitrides are wide band-gap semiconductors with a broad range of opto-electronic applications in LEDs, laser diodes, UV detectors as well as high temperature/high frequency devices. Due to the lack of good quality native substrates, GaN is grown on foreign substrates that have a lattice and thermal mismatch with GaN. This results in a material with a high density of defects, which in turn adversely affects the opto-electronic properties of the epilayer. In this study, GaN films were epitaxially grown on various substrates (C-plane sapphire, A-plane sapphire, SiC and ZnO) by molecular beam epitaxy. Additionally, GaN homoepitaxy onto laterally overgrown thick GaN substrates was investigated. It was demonstrated that the polarity of the GaN film plays a major role in determining the properties of the films. The growth parameters were optimized to eliminate inversion domain boundaries, which result in domains of opposite polarity in the GaN lattice. For growth on A-plane sapphire, it was found that substrate nitridation and low temperature buffer deposition are critical in order to obtain good epitaxial growth, in spite of the relatively small mismatch between the film and substrate. A crystallographic model was developed to explain this observation. By optimizing growth parameters, GaN films with excellent structural, transport, optical and device properties were grown. The second part of this research involves growth of ternary alloys and superlattice structures, which are essential in the fabrication of many devices. It was found that the InN-GaN pseudo-binary system is not homogeneous over the entire composition range. Due to the mismatch between the tetrahedral radii of GaN and InN, InGaN alloys exhibited phase separation and long-range atomic ordering. Investigations of InxGa1-xN films grown over a wide range of compositions by XRD and TEM showed that the predominant strain relieving mechanism was phase separation in films with x > 0.2, and ordering in films with x < 0.2. This spontaneous segregation of InGaN to form phase separated and ordered regions could justify the high luminescence efficiencies observed in this material in spite of its inherent high defect density. The degree of ordering in these alloys was found to increase with growth rate.

  7. Development of a unique laboratory standard indium gallium arsenide detector for the 500 to 1700 micron spectral region, phase 2

    Science.gov (United States)

    Ban, Vladimir S.; Olsen, Gregory H.

    1990-01-01

    In the course of this work, 5 mm diameter InGaAs pin detectors were produced which met or exceeded all of the goals of the program. The best results achieved were: shunt resistance of over 300 K ohms; rise time of less than 300 ns; contact resistance of less than 20 ohms; quantum efficiency of over 50 percent in the 0.5 to 1.7 micron range; and devices were maintained and operated at 125 C without deterioration for over 100 hours. In order to achieve the goals of this program, several major technological advances were realized, among them: successful design, construction and operation of a hydride VPE reactor capable of growing epitaxial layers on 2 inch diameter InP substrates with a capacity of over 8 wafers per day; wafer processing was upgraded to handle 2 inch wafers; a double layer Si3N4/SiO2 antireflection coating which enhances response over the 0.5 to 1.7 micron range was developed; a method for anisotropic, precisely controlled CH4/H2 plasma etching for enhancement of response at short wavelengths was developed; and electronic and optical testing methods were developed to allow full characterization of detectors with size and spectral response characteristics. On the basis of the work and results achieved in this program, it is concluded that large size, high shunt resistance, high quantum efficiency InGaAs pin detectors are not only feasible but also manufacturable on industrial scale. This device spans a significant portion of visible and near infrared spectral range and it will allow a single detector to be used for the 0.5 to 1.7 micron spectral region, rather than the presently used silicon (for 0.5 to 1.1 microns) and germanium (0.8 to 1.7 microns).

  8. Cadmium sulfide quantum dots supported on gallium and indium oxide for visible-light-driven hydrogen evolution from water.

    Science.gov (United States)

    Pan, Yun-xiang; Zhuang, Huaqiang; Hong, Jindui; Fang, Zheng; Liu, Hai; Liu, Bin; Huang, Yizhong; Xu, Rong

    2014-09-01

    In this work, CdS quantum dots (QDs) supported on Ga2O3 and In2O3 are applied for visible-light-driven H2 evolution from aqueous solutions that contain lactic acid. With Pt as the cocatalyst, the H2 evolution rates on CdS/Pt/Ga2O3 and CdS/Pt/In2O3 are as high as 995.8 and 1032.2 μmol h(-1), respectively, under visible light (λ>420 nm) with apparent quantum efficiencies of 43.6 and 45.3% obtained at 460 nm, respectively. These are much higher than those on Pt/CdS (108.09 μmol h(-1)), Pt/Ga2O3 (0.12 μmol h(-1)), and Pt/In2O3 (0.05 μmol h(-1)). The photocatalysts have been characterized thoroughly and their band structures and photocurrent responses have been measured. The band alignment between the CdS QDs and In2O3 can lead to interfacial charge separation, which cannot occur between the CdS QDs and Ga2O3. Among the various possible factors that contribute to the high H2 evolution rates on CdS/Pt/oxide, the surface properties of the metal oxides play important roles, which include (i) the anchoring of CdS QDs and Pt nanoparticles for favorable interactions and (ii) the efficient trapping of photogenerated electrons from the CdS QDs because of surface defects (such as oxygen defects) based on photoluminescence and photocurrent studies.

  9. New phenoxyl radical complexes of manganese, gallium, indium and iron based on an H2bbpen ligand derivative

    OpenAIRE

    Anjos,Ademir dos; Adailton J. Bortoluzzi; Caro,Miguel S. B.; Peralta, Rosely A.; Friedermann,Geraldo R.; Antonio S Mangrich; Neves,Ademir

    2006-01-01

    Reported herein are the synthesis and characterization of the hexadentate H2L pro-ligand (N,N',N,N'-bis[(2-hydroxy-3,5-di-tert -butylbenzyl)(2-pyridylmethyl)]ethylenediamine), as a further derivative of the well known pro-ligand H2bbpen which contains two phenolate and two pyridyl pendant arms. The phenolate groups in H2L are suitably protected by bulky substituents (tert-butyl) in the ortho- and para- positions, from which stable phenoxyl radical complexes can be formed. Thus, we have synthe...

  10. Diagnostic imaging of musculoskeletal infection. Roentgenography; Gallium, indium-labeled white blood cell, gammaglobulin, bone scintigraphy; and MRI

    Energy Technology Data Exchange (ETDEWEB)

    Wegener, W.A.; Alavi, A. (Hospital of the University of Pennsylvania, Philadelphia (USA))

    1991-07-01

    A great deal of effort has been made to evaluate and define the role of various diagnostic imaging techniques in various clinical settings that complicate the diagnosis of osteomyelitis. Except possibly in neonates, bone scintigraphy remains generally recommended when there has been no previous osseous involvement. In other cases of chronic disease, previous fracture or trauma, prosthesis, and diabetic foot, In-WBC scintigraphy is generally accepted as an appropriate imaging technique. MRI will play an increasingly important role in diagnosing osteomyelitis and may prove to be an important adjunct in these cases. Research continues to improve our current diagnostic armamentarium. In-IgG appears to avoid practical deficiencies encountered with 67Ga and In-WBC; it remains to be seen what role this agent will play in routine clinical practice. All agents to date image inflammation, not infection, and most require delayed imaging sessions, usually at 24 hours. These shortcomings necessitate further research to develop new radiotracers that can provide useful images within several hours and that are specific for infection, perhaps ultimately delineating the particular microorganism involved.84 references.

  11. Junction characteristics of indium tin oxide/indium phosphide solar cells

    Science.gov (United States)

    Sheldon, P.; Ahrenkiel, R. K.; Hayes, R. E.; Russell, P. E.; Nottenburg, R. N.; Kazmerski, L. L.

    Efficient indium tin oxide (ITO)/p-InP solar cells have been fabricated. Typical uncorrected efficiencies range from 9-12 percent at AM1 intensities. It is shown that deposition of ITO causes a semi-insulating layer at the InP surface as determined by C-V measurements. The thickness of this layer is approximately 750 A. We believe that this high resistivity region is due to surface accumulation of Fe at the ITO/InP interface.

  12. Monte Carlo simulation of electron slowing down in indium

    Energy Technology Data Exchange (ETDEWEB)

    Rouabah, Z.; Hannachi, M. [Materials and Electronic Systems Laboratory (LMSE), University of Bordj Bou Arreridj, Bordj Bou Arreridj (Algeria); Champion, C. [Université de Bordeaux 1, CNRS/IN2P3, Centre d’Etudes Nucléaires de Bordeaux-Gradignan, (CENBG), Gradignan (France); Bouarissa, N., E-mail: n_bouarissa@yahoo.fr [Laboratory of Materials Physics and its Applications, University of M' sila, 28000 M' sila (Algeria)

    2015-07-15

    Highlights: • Electron scattering in indium targets. • Modeling of elastic cross-sections. • Monte Carlo simulation of low energy electrons. - Abstract: In the current study, we aim at simulating via a detailed Monte Carlo code, the electron penetration in a semi-infinite indium medium for incident energies ranging from 0.5 to 5 keV. Electron range, backscattering coefficients, mean penetration depths as well as stopping profiles are then reported. The results may be seen as the first predictions for low-energy electron penetration in indium target.

  13. Speciation analysis of aluminium and aluminium fluoride complexes by HPIC-UVVIS.

    Science.gov (United States)

    Frankowski, Marcin; Zioła-Frankowska, Anetta

    2010-10-15

    The study presents a new analytical method for speciation analysis in fractionation of aluminium fluoride complexes and free Al(3+) in soil samples. Aluminium speciation was studied in model solutions and soil extract samples by means of high performance ion chromatography (HPIC) with UV-VIS detection using post-column reaction with tiron for the separation and detection of aluminium fluoride complex and Al(3+) forms during one analysis. The paper presents particular stages of the chromatographic process optimization involving selecting the appropriate eluent strength, type of elution or concentration and quantity of derivatization reagent. HPIC was performed on a bifunctional analytical column Dionex IonPac CS5A. The use of gradient elution and the eluents A: 1M NH(4)Cl and B: water acidified to pH of eluent phase, enabled full separation of fluoride aluminium forms as AlF(2)(+), AlF(3)(0), AlF(4)(-) (first signal), AlF(2+) (second signal) and form Al(3+) in a single analytical procedure. The proposed new method HPIC-UVVIS was applied successfully in the quantitative and qualitative analysis of soil samples.

  14. Aluminium and iron air pollution near an iron casting and aluminium foundry in Turin district (Italy).

    Science.gov (United States)

    Polizzi, Salvatore; Ferrara, Mauro; Bugiani, Massimiliano; Barbero, Domenico; Baccolo, Tiziana

    2007-09-01

    This work reports the results of an environmental survey carried out in an industrial area in the Province of Turin: its main aim is to assess the levels of iron and aluminium in the outside air during the period from July to September to assess the influence of industrial activity (a cast-iron and aluminium foundry) which is interrupted during the month of August, on the level of metals present in the air. Conducting the analysis during this period of time made it possible to avoid the confounding effect of pollution due to domestic central heating. The measurements were taken from nine areas at different distances from the foundry in the area and according to the direction of the prevailing winds, as deduced from the historical data. The results of this survey show a statistically significant difference in iron and aluminium levels in the outside air in the geographic areas between the two main periods examined: during August (no foundry activity) v/s July-September (foundry activity). The values recorded are: Aluminium 0.4+/-0.45 microg/m(3) v/s 1.12+/-1.29 microg/m(3) (pIron 0.95+/-0.56 microg/m(3) v/s 1.6+/-1.0 microg/m(3) (piron tended to be higher in the areas farther away from the foundry site in the areas located along the path of the prevailing winds.

  15. Tailored Aluminium based Coatings for Optical Appearance and Corrosion Resistance

    DEFF Research Database (Denmark)

    Aggerbeck, Martin

    of these applications, but the use of recycled aluminium compromises this due to the presence of increased levels of impurity and alloying elements. Knowledge on how different alloying elements affect the optical appearance might therefore increase the applicability of recycled aluminium. It was investigated how...

  16. Enhanced corrosion protection by microstructural control of aluminium brazing sheet

    NARCIS (Netherlands)

    Norouzi Afshar, F.

    2013-01-01

    Aluminium brazing sheet is a sandwich material made out of two aluminium alloys (AA4xxx/AA3xxx) and is widely used in automotive heat exchangers. One of the main performance criteria for heat exchanger units is the lifetime of the product. The lifetime of the heat exchanger units is determined by th

  17. CAD implementation of design rules for aluminium extrusion dies

    NARCIS (Netherlands)

    Ouwerkerk, van Gijs

    2009-01-01

    Aluminium extrusion is an industrial forming process that is used to produce long profiles of a constant cross-section. This cross-section is shaped by the opening in a steel tool known as the die. The understanding of the mechanics of the aluminium extrusion process is still limited. The flow of al

  18. New Policies to Control the Aluminium Industry Expansion

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    <正>Information from China Nonferrous Metals Industry Association (CNIA) shows that new government policies on China’s aluminium industry will be released soon in order to control the rapid expansion of the aluminium industry which consumes large amount of power resources. Based on the new policies, investors of

  19. Aluminium salt slag characterization and utilization--a review.

    Science.gov (United States)

    Tsakiridis, P E

    2012-05-30

    Aluminium salt slag (also known as aluminium salt cake), which is produced by the secondary aluminium industry, is formed during aluminium scrap/dross melting and contains 15-30% aluminium oxide, 30-55% sodium chloride, 15-30% potassium chloride, 5-7% metallic aluminium and impurities (carbides, nitrides, sulphides and phosphides). Depending on the raw mix the amount of salt slag produced per tonne of secondary aluminium ranges from 200 to 500 kg. As salt slag has been classified as toxic and hazardous waste, it should be managed in compliance with the current legislation. Its landfill disposal is forbidden in most of the European countries and it should be recycled and processed in a proper way by taking the environmental impact into consideration. This paper presents a review of the aluminium salt slag chemical and mineralogical characteristics, as well as various processes for metal recovery, recycling of sodium and potassium chlorides content back to the smelting process and preparation of value added products from the final non metallic residue.

  20. Aluminium removal from water after defluoridation with the electrocoagulation process.

    Science.gov (United States)

    Sinha, Richa; Mathur, Sanjay; Brighu, Urmila

    2015-01-01

    Fluoride is the most electronegative element and has a strong affinity for aluminium. Owing to this fact, most of the techniques used for fluoride removal utilized aluminium compounds, which results in high concentrations of aluminium in treated water. In the present paper, a new approach is presented to meet the WHO guideline for residual aluminium concentration as 0.2 mg/L. In the present work, the electrocoagulation (EC) process was used for fluoride removal. It was found that aluminium content in water increases with an increase in the energy input. Therefore, experiments were optimized for a minimum energy input to achieve the target value (0.7 mg/L) of fluoride in resultant water. These optimized sets were used for further investigations of aluminium control. The experimental investigations revealed that use of bentonite clay as coagulant in clariflocculation brings down the aluminium concentration of water below the WHO guideline. Bentonite dose of 2 g/L was found to be the best for efficient removal of aluminium.

  1. Chalco Calls for End of More Control Measures on Aluminium

    Institute of Scientific and Technical Information of China (English)

    2004-01-01

    <正> To control the investment rush in electrolyticaluminium in recent years and ensure thehealthy development of China’s aluminium in-dustry, the State Council recently released aseries of adjustment policies and control meas-ures,which effectively prevented theinvestment rush and limited the aluminium out-put growth.

  2. Combined Corrosion and Wear of Aluminium Alloy 7075-T6

    NARCIS (Netherlands)

    Liu, Y.; Mol, J.M.C.; Janssen, G.C.A.M.

    2016-01-01

    The aluminium alloy 7075-T6 is widely used in engineering. In some applications, like slurry transport, corrosion and abrasion occur simultaneously, resulting in early material failure. In the present work, we investigated the combined effect of corrosion and wear on the aluminium alloy 7075-T6. We

  3. High quality factor indium oxide mechanical microresonators

    Energy Technology Data Exchange (ETDEWEB)

    Bartolomé, Javier, E-mail: j.bartolome@fis.ucm.es; Cremades, Ana; Piqueras, Javier [Department of Materials Physics, Faculty of Physics, Universidad Complutense de Madrid, 28040 Madrid (Spain)

    2015-11-09

    The mechanical resonance behavior of as-grown In{sub 2}O{sub 3} microrods has been studied in this work by in-situ scanning electron microscopy (SEM) electrically induced mechanical oscillations. Indium oxide microrods grown by a vapor–solid method are naturally clamped to an aluminum oxide ceramic substrate, showing a high quality factor due to reduced energy losses during mechanical vibrations. Quality factors of more than 10{sup 5} and minimum detectable forces of the order of 10{sup −16} N/Hz{sup 1/2} demonstrate their potential as mechanical microresonators for real applications. Measurements at low-vacuum using the SEM environmental operation mode were performed to study the effect of extrinsic damping on the resonators behavior. The damping coefficient has been determined as a function of pressure.

  4. Indium-carbon pairs in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Tessema, G; Vianden, R [Helmholtz Institut fuer Strahlen-und Kernphysik, Universitaet Bonn, Nussallee 14-16, 53115 Bonn (Germany)

    2003-08-06

    The interactions of carbon with the probe nucleus {sup 111}In have been studied in germanium using the perturbed angular correlation method, which has the ability to detect the microscopic environments of the probe atom by means of the interaction of the nuclear moments of the probe with the surrounding electromagnetic fields. At high dose carbon implantation in germanium two complexes have been identified by their unique quadrupole interaction frequencies. An interaction frequency of {nu}{sub Q1} = 207(1) MHz ({eta} = 0.16(3)) appeared at annealing temperatures below 650 deg. C. Above 650 deg. C, it was replaced by a second interaction frequency of {nu}{sub Q2} 500(1) MHz ({eta} = 0). The frequencies are attributed to two different carbon-indium pairs. The orientation of the corresponding electric field gradients and the thermal stability of the defect complexes are studied.

  5. Nonlinear electronic transport behavior in Indium Nitride

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigues, Cloves G., E-mail: cloves@pucgoias.edu.br [Departamento de Fisica, Pontificia Universidade Catolica de Goias, CP 86, 74605-010 Goiania, Goias (Brazil)

    2012-11-15

    A theoretical study on the nonlinear transport of electrons and of the nonequilibrium temperature in n-doped Indium Nitride under influence of moderate to high electric fields (in this nonlinear domain) is presented. It is based on a nonlinear quantum kinetic theory which provides a description of the dissipative phenomena developing in the system. The electric current and the mobility in the steady state are obtained, and their dependence on the electric field strength and on the concentration (that is, a mobility dependent nonlinearly on field and concentration) is obtained and analyzed. -- Highlights: Black-Right-Pointing-Pointer We have reported on the topic of nonlinear transport (electron mobility) in n-doped InN. Black-Right-Pointing-Pointer The results evidence the presence of two distinctive regimes. Black-Right-Pointing-Pointer The dependence of the mobility on the electric field is manifested through of the relaxation times.

  6. Negative Magnetoresistance in Amorphous Indium Oxide Wires

    Science.gov (United States)

    Mitra, Sreemanta; Tewari, Girish C.; Mahalu, Diana; Shahar, Dan

    2016-11-01

    We study magneto-transport properties of several amorphous Indium oxide nanowires of different widths. The wires show superconducting transition at zero magnetic field, but, there exist a finite resistance at the lowest temperature. The R(T) broadening was explained by available phase slip models. At low field, and far below the superconducting critical temperature, the wires with diameter equal to or less than 100 nm, show negative magnetoresistance (nMR). The magnitude of nMR and the crossover field are found to be dependent on both temperature and the cross-sectional area. We find that this intriguing behavior originates from the interplay between two field dependent contributions.

  7. Usage of neural network to predict aluminium oxide layer thickness.

    Science.gov (United States)

    Michal, Peter; Vagaská, Alena; Gombár, Miroslav; Kmec, Ján; Spišák, Emil; Kučerka, Daniel

    2015-01-01

    This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage) and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A · dm(-2) and 3 A · dm(-2) for creating aluminium oxide layer.

  8. Durability of Lacquered Aluminium Profile Considering Tropical Weather Conditions

    Directory of Open Access Journals (Sweden)

    Rigoberto Marrero Águila

    2013-11-01

    Full Text Available Searching for solutions against the degradation of materials by corrosion effect, is a common practice to use alloys such as aluminium instead of steel due to the advantages obtained. The lacquered aluminium profiles can substitute other materials like wood, in the carpentry production, becoming an economic saving. There is an increasingly use of aluminium replacing other traditional materials in the constructions in process, but its quality has been reduced in a considerable amount of installations. In this research, aluminium profiles from five different sources were submitted to a trial in natural exposition conditions at the Tropical weather condition Testing Lab, in order to evaluate their behaviour and establish, for the first time in our country, standing rules for lacquered aluminium profiles to be strictly fulfilled by manufacturers and importers. The results will allow modifying thickness standards of this type of coating, to guaranty its durability and to eliminate the failures provoked by our high severe weather conditions.

  9. Experimental investigations on mechanical behavior of aluminium metal matrix composites

    Science.gov (United States)

    Rajesh, A. M.; Kaleemulla, Mohammed

    2016-09-01

    Today we are widely using aluminium based metal matrix composite for structural, aerospace, marine and automobile applications for its light weight, high strength and low production cost. The purpose of designing metal matrix composite is to add the desirable attributes of metals and ceramics to the base metal. In this study we developed aluminium metal matrix hybrid composite by reinforced Aluminium7075 alloy with silicon carbide (SiC) and aluminium oxide (alumina) by method of stir casting. This technique is less expensive and very effective. The Hardness test and Wear test were performed on the specimens which are prepared by stir casting techniques. The result reveals that the addition of silicon carbide and alumina particles in aluminium matrix improves the mechanical properties.

  10. Aluminium/iron reinforced polyfurfuryl alcohol resin as advanced biocomposites

    Directory of Open Access Journals (Sweden)

    Rakesh Kumar

    2016-07-01

    Full Text Available Aluminium and iron are widely used in construction sectors for the preparation of advanced composites with epoxy resins as matrices. In recent times, there are several reports on the polymerization of polyfufuryl alcohol (PFA a thermoset bioresins from furfuryl alcohol (FA. FA is obtained from waste of sugarcane bagasse. In this work, first the possibility of curing PFA from FA in the presence of aluminium or iron has been explored. Absorbance results from colorimeter/spectrophotometerindicated that the curing of FA to PFA in presence of aluminium started easily while in presence of iron the curing of FA to PFA could not start. Based on the above results, aluminium wire reinforced composites were successfully prepared with three different weight fractions (0.13, 0.09 and 0.07 of aluminium wire. The mechanical properties of these composites were determined theoretically and reported.

  11. Role of Gallium and labeled leukocyte scintigraphy in AIDS patient

    Energy Technology Data Exchange (ETDEWEB)

    Palestro, C.J. [Division of nuclear medicine, Long Island Jewish Medical Center, New Hyde Park, New York (United States); Goldsmith, S.J. [Division of nuclear medicine, New York Hospital, Cornell Medical Center, New York (United States)

    1995-09-01

    Because AIDS patients frequently present with minimal symptomatology, radionuclide imaging with its ability to survey the entire body, is especially valuable. Gallium-67 citrate, the most commonly performed radionuclide study for localizing infection in these patients, is most useful for detecting opportunistic infections, especially in the thorax. A negative gallium scan, particularly when the chest X-ray is unremarkable, rules strongly against pulmonary disease. A negative gallium scan in a patient with an abnormal chest X-ray and Kaposi`s sarcoma, suggests that the patient`s respiratory distress is related to the neoplasm. Diffuse pulmonary parenchymal uptake of gallium in the HIV (+) patient is most often associated with PCP. While there are other causes of diffuse pulmonary uptake, the more intense or heterogeneous the uptake, the more likely the patient is to have PCP. Focal pulmonary uptake is usually associated with bacterial pneumonia although PCP may occasionally present in this fashion. Lymph node uptake of gallium is usually associated with Mycob acterium avium complex, tuberculosis, or Iymphoma. When corresponding abnormalities are present on thallium scintigraphy lymphoma is likely. Gallium positive, thallium negative, studies suggest mycobacterial disease. Labeled leukocyte imaging is not useful for detecting opportunistic infections probably because of the inflammatory response incited by these organisms. Leukocyte imaging is, however, more sensitive for detecting bacterial pneumonia. In the abdomen, gallium imaging is most useful for identifying lymphadenopathy, while labeled leukocyte imaging is superior for detecting AlDS-associated colitides. In summary, radionuclide studies are valuable diagnostic modalities in AIDS. Their success can be maximized by tailoring the study to the individual`s needs.

  12. Application of ultrasound in solvent extraction of nickel and gallium

    Energy Technology Data Exchange (ETDEWEB)

    Pesic, B.

    1996-07-01

    The effects of ultrasound on the rate of solvent extraction of nickel with Lix 65N and Lix 70, and gallium with Kelex 100 were investigated. These solvent extraction systems are noted by their sluggish nature. Low frequency (20 kHz) ultrasound increased the rates of extraction of nickel by factors of four to seven. The ultrasound had no effect on the final chemical equilibrium. Gallium extraction rates were enhanced with the use of ultrasound by as much as a factor of 15. Again, the ultrasound had no effect on extraction equilibrium. For both nickel and gallium, the enhanced rates were attributed to increased interfacial surface area associated with ultrasonically induced cavitation and microdroplet formation. The stability of the microdroplets permitted intermittent application of ultrasound with corresponding decreases in ultrasonic energy requirements. The lowest energy consumption was observed with short (0.25 to 5 s) bursts of high power (41 to 61 W) ultrasonic inputs. The study also provided insight into the factors that affect the complex extraction of gallium from sodium aluminate solutions. The rate controlling step was found to be the dehydration of the gallate ion, Ga(OH)4, and the first complex formation between gallium and Kelex 100. Sodium was found to enhance the extraction rate up to a point, beyond which increased concentration was detrimental. Increasing aluminum concentration was found to slow extraction rates. Modifiers and diluents were shown to markedly affect extraction rates even without ultrasound. Ketone modifiers, particularly 2-undecanone, when used with Kermac 470B or Escaid 200 diluents enhanced extraction rates of gallium to the point that the use of ultrasound provided no additional benefits. The positive effects of ketone modifiers for the solvent extraction of gallium had not been previously reported.

  13. Forming of aluminium alloy friction stir welds

    Science.gov (United States)

    Bruni, Carlo

    2016-10-01

    The present paper aims at investigating, through analytical models, numerical models and experiments, the effect of the warm deformation phase, realised with an in temperature upsetting, on the weld previously performed by friction stir lap welding on aluminium alloy blanks. The investigation allows to show the deformation zones after upsetting that determine the homogenisation of the weld section. The analytical model allows to relate the friction factor with the upsetting load. The presence on the weld of not elevated friction factor values determines the deformation and localisation levels very useful for the weld. Such methodology allows to improve the weld itself with the forming phase.

  14. Friction stir welding of single crystal aluminium

    DEFF Research Database (Denmark)

    Fonda, Richard Warren; Wert, John A.; Reynolds, A.P.

    2007-01-01

    Friction stir welds were prepared in different orientations in an aluminium single crystal. The welds were quenched to preserve the microstructure surrounding the tool and then electron backscattered diffraction was used to reveal the generation of grain boundaries and the evolution...... of crystallographic texture around the tool in each weld. The extent of both dynamic recrystallisation and conventional recrystallisation varied considerably as a function of weld orientation. As the base plate begins to interact with the deformation field surrounding the tool, regions of the single crystal rotate...

  15. CERN: very large magnet with aluminium winding

    Energy Technology Data Exchange (ETDEWEB)

    Wittgenstein, F.A.

    1984-10-25

    The construction of an octagonal solenoid from trapezoidal plates of Al, 6m long and 6cm thick, assembled by electron beam welding, for installation in a laboratory 50m underground is described. The objective is to create a field of 0.5T in a volume of 1000m/sup 3/ for the L3 particle detector of the LEP accelerator project. Principal dimensions and weights of the structure are given and its three stages of implementation are described, with reference to the contributions from the Swiss aluminium industry.

  16. Volatilisation and oxidation of aluminium scraps fed into incineration furnaces

    Energy Technology Data Exchange (ETDEWEB)

    Biganzoli, Laura, E-mail: laura.biganzoli@mail.polimi.it [Politecnico di Milano, Piazza L. Da Vinci 32, 20133 Milano (Italy); Gorla, Leopoldo; Nessi, Simone; Grosso, Mario [Politecnico di Milano, Piazza L. Da Vinci 32, 20133 Milano (Italy)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer Aluminium packaging partitioning in MSW incineration residues is evaluated. Black-Right-Pointing-Pointer The amount of aluminium packaging recoverable from the bottom ashes is evaluated. Black-Right-Pointing-Pointer Aluminium packaging oxidation rate in the residues of MSW incineration is evaluated. Black-Right-Pointing-Pointer 80% of aluminium cans, 51% of trays and 27% of foils can be recovered from bottom ashes. - Abstract: Ferrous and non-ferrous metal scraps are increasingly recovered from municipal solid waste incineration bottom ash and used in the production of secondary steel and aluminium. However, during the incineration process, metal scraps contained in the waste undergo volatilisation and oxidation processes, which determine a loss of their recoverable mass. The present paper evaluates the behaviour of different types of aluminium packaging materials in a full-scale waste to energy plant during standard operation. Their partitioning and oxidation level in the residues of the incineration process are evaluated, together with the amount of potentially recoverable aluminium. About 80% of post-consumer cans, 51% of trays and 27% of foils can be recovered through an advanced treatment of bottom ash combined with a melting process in the saline furnace for the production of secondary aluminium. The residual amount of aluminium concentrates in the fly ash or in the fine fraction of the bottom ash and its recovery is virtually impossible using the current eddy current separation technology. The average oxidation levels of the aluminium in the residues of the incineration process is equal to 9.2% for cans, 17.4% for trays and 58.8% for foils. The differences between the tested packaging materials are related to their thickness, mechanical strength and to the alloy.

  17. Recovering indium with sulfating roasting from copper-smelting ash

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A technology for recovering indium from Jinchuan copper-smelting ash was developed. Indium in the ash was first enriched to the leaching-slag in leaching process, and then recovered by sulfating roasting. The method included mixing the leaching-slag with sulfuric acid, making them into particles, roasting the mixture, and then leaching the calcine with hot water. Above 90% of indium in calcine could be dissolved into the leaching solution. The optimized conditions were determined as follows: the mass ratio of sulfuric acid to leaching slag was 0.1, the roasting time was about 1 to 1.5 h in the temperature range of 200-250 ℃, and the calcine was leached for 1 h with 5:1 of liquid/solid ratio at 60℃. Over 99% of indium in leaching solution was finally enriched by Zn substitution or sulfide precipitation.

  18. Gallium nitrate inhibits alkaline phosphatase activity in a differentiating mesenchymal cell culture.

    Science.gov (United States)

    Boskey, A L; Ziecheck, W; Guidon, P; Doty, S B

    1993-02-01

    The effect of gallium nitrate on alkaline phosphatase activity in a differentiating chick limb-bud mesenchymal cell culture was monitored in order to gain insight into the observation that rachitic rats treated with gallium nitrate failed to show the expected increase in serum alkaline phosphatase activity. Cultures maintained in media containing 15 microM gallium nitrate showed drastically decreased alkaline phosphatase activities in the absence of significant alterations in total protein synthesis and DNA content. However, addition of 15 microM gallium nitrate to cultures 18 h before assay for alkaline phosphatase activity had little effect. At the light microscopic and electron microscopic level, gallium-treated cultures differed morphologically from gallium-free cultures: with gallium present, there were fewer hypertrophic chondrocytes and cartilage nodules were flatter and further apart. Because of altered morphology, staining with an antibody against chick cartilage alkaline phosphatase appeared less extensive; however, all nodules stained equivalently relative to gallium-free controls. Histochemical staining for alkaline phosphatase activity was negative in gallium-treated cultures, demonstrating that the alkaline phosphatase protein present was not active. The defective alkaline phosphatase activity in cultures maintained in the presence of gallium was also evidenced when cultures were supplemented with the alkaline phosphatase substrate, beta-glycerophosphate (beta GP). The data presented suggest that gallium inhibits alkaline phosphatase activity in this culture system and that gallium causes alterations in the differentiation of mesenchymal cells into hypertrophic chondrocytes.

  19. Imaging Gallium Nitride High Electron Mobility Transistors to Identify Point Defects

    Science.gov (United States)

    2014-03-01

    REPORT TYPE AND DATES COVERED Master’s Thesis 4. TITLE AND SUBTITLE IMAGING GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTORS TO IDENTIFY...Identification of these trends will assist in the improvement of gallium nitride HEMT fabrication processes leading to the development of more...reliable devices. 14. SUBJECT TERMS Electron microscopy, Gallium Nitride (GaN), high electron mobility transistor (HEMT

  20. Recovery of indium from LCD screens of discarded cell phones.

    Science.gov (United States)

    Silveira, A V M; Fuchs, M S; Pinheiro, D K; Tanabe, E H; Bertuol, D A

    2015-11-01

    Advances in technological development have resulted in high consumption of electrical and electronic equipment (EEE), amongst which are cell phones, which have LCD (liquid crystal display) screens as one of their main components. These multilayer screens are composed of different materials, some with high added value, as in the case of the indium present in the form of indium tin oxide (ITO, or tin-doped indium oxide). Indium is a precious metal with relatively limited natural reserves (Dodbida et al., 2012), so it can be profitable to recover it from discarded LCD screens. The objective of this study was to develop a complete process for recovering indium from LCD screens. Firstly, the screens were manually removed from cell phones. In the next step, a pretreatment was developed for removal of the polarizing film from the glass of the LCD panels, because the adherence of this film to the glass complicated the comminution process. The choice of mill was based on tests using different equipment (knife mill, hammer mill, and ball mill) to disintegrate the LCD screens, either before or after removal of the polarizing film. In the leaching process, it was possible to extract 96.4 wt.% of the indium under the following conditions: 1.0M H2SO4, 1:50 solid/liquid ratio, 90°C, 1h, and stirring at 500 rpm. The results showed that the best experimental conditions enabled extraction of 613 mg of indium/kg of LCD powder. Finally, precipitation of the indium with NH4OH was tested at different pH values, and 99.8 wt.% precipitation was achieved at pH 7.4.

  1. Gallium based low-interaction anions

    Science.gov (United States)

    King, Wayne A.; Kubas, Gregory J.

    2000-01-01

    The present invention provides: a composition of the formula M.sup.+x (Ga(Y).sub.4.sup.-).sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; a composition of the formula (R).sub.x Q.sup.+ Ga(Y).sub.4.sup.- where Q is selected from the group consisting of carbon, nitrogen, sulfur, phosphorus and oxygen, each R is a ligand selected from the group consisting of alkyl, aryl, and hydrogen, x is an integer selected from the group consisting of 3 and 4 depending upon Q, and each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; an ionic polymerization catalyst composition including an active cationic portion and a gallium based weakly coordinating anion; and bridged anion species of the formula M.sup.+x.sub.y [X(Ga(Y.sub.3).sub.z ].sup.-y.sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, magnesium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, X is a bridging group between two gallium atoms, y is an integer selected from the group consisting 1 and 2, z is an integer of at least 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide.

  2. Gallium scintigraphy in a case of septic cavernous sinus thrombosis

    Energy Technology Data Exchange (ETDEWEB)

    Palestro, C.J.; Malat, J.; Gladstone, A.G.; Richman, A.H.

    1986-09-01

    Septic cavernous sinus thrombosis, a relatively uncommon disease entity, frequently can be fatal. Early diagnosis is imperative in order that appropriate treatment be instituted. A 59-year-old woman who was admitted to our institution with complaints of diplopia, blurred vision and fevers that developed following a tooth extraction is presented. Initial CT and lumbar puncture on the day of admission were totally normal. A repeat CT performed 48 hours after admission, on the same day as gallium imaging, demonstrated findings consistent with cavernous sinus thrombosis. Gallium imaging demonstrated intense uptake in the left cavernous sinus and left orbit as well as moderately increased activity in the right cavernous sinus and orbit, confirming infection. The patient was treated with antibiotics, and repeat CT and gallium imaging were performed ten days later, both of which demonstrated near total resolution of the disease process. Conceivably, if gallium imaging had been initiated on the day of admission it may have been the first study to demonstrate an infectious process in the cavernous sinus. Gallium imaging should be considered as a diagnostic tool in the noninvasive workup of this entity.

  3. Indium-111 octreotide uptake in the surgical scar

    Energy Technology Data Exchange (ETDEWEB)

    Degirmenci, B.; Bekis, R.; Durak, H.; Derebeck, E. [Dokuz Eylul Univ., Izmir (Turkey). Dept. of Nuclear Medicine; Sen, M. [Dokuz Eylul Univ., Izmir (Turkey). Dept. of Radiation Oncology

    1999-07-01

    Indium-111 octreotide uptake has been reported in various somatostatin receptor positive tumors, granulomas and autoimmune diseases in which activated leucocytes may play a role, subcutaneous cavernous hemangioma and angiofibroma. We present Indium-111 octreotide uptake in a surgical abdominal scar tissue 1.5 to 6 months after surgery in a patient who had been treated for recurrent carcinoid tumor in the rectosigmoid junction. Indium-111 octreotide uptake in a surgical scar may be related to the binding to somatostatin receptors in the activated lymphocytes and fibroblasts that is previously reported. (orig.) [German] In verschiedenen Somatostatinrezeptor-positiven Tumoren, Granulomen, bei Autoimmunerkrankungen, in denen aktivierte Leukozyten eine Rolle spielen, subcutanen kavernoesen Hammangiomen und Angiofibromen wurde ueber die Anreicherung von Indium-111-Oktreotid berichtet. Wir berichten ueber die Anreicherung von Indium-111-Oktreotid in einer chirurgischen Narbe ueber dem Abdomen nach 1,5 und 6 Monaten bei einem Patienten mit einem Rezidiv-Karzinoid im rektosigmoidalen Uebergang. Die Anreicherung von Indium-111-Oktreotid in chirurgischen Narbengewebe koennte in Zusammenhang stehen mit einer Bindung an Somatostationrezeptoren in aktivierten Lymphozyten und Fibroblasten, ueber die schon berichtet wurde. (orig.)

  4. Study on indium leaching from mechanically activated hard zinc residue

    Directory of Open Access Journals (Sweden)

    Yao J.H.

    2011-01-01

    Full Text Available In this study, changes in physicochemical properties and leachability of indium from mechanically activated hard zinc residue by planetary mill were investigated. The results showed that mechanical activation increased specific surface area, reaction activity of hard zinc residue, and decreased its particle size, which had a positive effect on indium extraction from hard zinc residue in hydrochloric acid solution. Kinetics of indium leaching from unmilled and activated hard zinc residue were also investigated, respectively. It was found that temperature had an obvious effect on indium leaching rate. Two different kinetic models corresponding to reactions which are diffusion controlled, [1-(1- x1/3]2=kt and (1-2x/3-(1-x2/3=kt were used to describe the kinetics of indium leaching from unmilled sample and activated sample, respectively. Their activation energies were determined to be 17.89 kJ/mol (umilled and 11.65 kJ/mol (activated within the temperature range of 30°C to 90°C, which is characteristic for a diffusion controlled process. The values of activation energy demonstrated that the leaching reaction of indium became less sensitive to temperature after hard zinc residue mechanically activated by planetary mill.

  5. Aluminium matrix composites: Challenges and opportunities

    Indian Academy of Sciences (India)

    M K Surappa

    2003-02-01

    Aluminium matrix composites (AMCs) refer to the class of light weight high performance aluminium centric material systems. The reinforcement in AMCs could be in the form of continuous/discontinuous fibres, whisker or particulates, in volume fractions ranging from a few percent to 70%. Properties of AMCs can be tailored to the demands of different industrial applications by suitable combinations of matrix, reinforcement and processing route. Presently several grades of AMCs are manufactured by different routes. Three decades of intensive research have provided a wealth of new scientific knowledge on the intrinsic and extrinsic effects of ceramic reinforcement vis-a-vis physical, mechanical, thermo-mechanical and tribological properties of AMCs. In the last few years, AMCs have been utilised in high-tech structural and functional applications including aerospace, defence, automotive, and thermal management areas, as well as in sports and recreation. It is interesting to note that research on particle-reinforced cast AMCs took root in India during the 70’s, attained industrial maturity in the developed world and is currently in the process of joining the mainstream of materials. This paper presents an overview of AMC material systems on aspects relating to processing, microstructure, properties and applications.

  6. Reactions on carbon anodes in aluminium electrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Eidet, Trygve

    1997-12-31

    The consumption of carbon anodes and energy in aluminium electrolysis is higher than what is required theoretically. This thesis studies the most important of the reactions that consume anode materials. These reactions are the electrochemical anode reaction and the airburn and carboxy reactions. The first part of the thesis deals with the kinetics and mechanism of the electrochemical anode reaction using electrochemical impedance spectroscopy. The second part deals with air and carboxy reactivity of carbon anodes and studies the effects of inorganic impurities on the reactivity of carbon anodes in the aluminium industry. Special attention is given to sulphur since its effect on the carbon gasification is not well understood. Sulphur is always present in anodes, and it is expected that the sulphur content of available anode cokes will increase in the future. It has also been suggested that sulphur poisons catalyzing impurities in the anodes. Other impurities that were investigated are iron, nickel and vanadium, which are common impurities in anodes which have been reported to catalyze carbon gasification. 88 refs., 92 figs., 24 tabs.

  7. Effects of varying indium composition on the thermoelectric properties of In x Ga1- x Sb ternary alloys

    Science.gov (United States)

    Nirmal Kumar, V.; Arivanandan, M.; Koyoma, T.; Udono, H.; Inatomi, Y.; Hayakawa, Y.

    2016-10-01

    In x Ga1- x Sb ( x = 0-1), a III-V ternary alloy, was grown by melt solidification process. The effects of varying indium composition on the thermoelectric properties of In x Ga1- x Sb polycrystals were studied for the first time. The segregations of indium and gallium elements were observed in the grown crystals, and the defects present in crystals were revealed by etching process. Room-temperature Raman measurement revealed that the dominant optical modes of phonon vibrations in InSb and GaSb binaries were suppressed in In x Ga1- x Sb ternaries. The in-phase vibrations of acoustic mode phonons were scattered more effectively in In x Ga1- x Sb by the present defects, and the relative value of lattice thermal conductivity was reduced. Thus, the thermal conductivity of InSb and GaSb binaries was drastically reduced in In x Ga1- x Sb by alloy scattering. InSb indicated the highest ZT 0.51 because of its higher power factor 70 µW/cmK2. Next to InSb, In0.8Ga0.2Sb had higher ZT value of 0.29 at 600 K among the In x Ga1- x Sb ternaries. The ZT of In0.8Ga0.2Sb was increased about 30 times than that of GaSb by the increase of power factor as well as the decrease of thermal conductivity.

  8. Native gallium adatoms discovered on atomically-smooth gallium nitride surfaces at low temperature.

    Science.gov (United States)

    Alam, Khan; Foley, Andrew; Smith, Arthur R

    2015-03-11

    In advanced compound semiconductor devices, such as in quantum dot and quantum well systems, detailed atomic configurations at the growth surfaces are vital in determining the structural and electronic properties. Therefore, it is important to investigate the surface reconstructions in order to make further technological advancements. Usually, conventional semiconductor surfaces (e.g., arsenides, phosphides, and antimonides) are highly reactive due to the existence of a high density of group V (anion) surface dangling bonds. However, in the case of nitrides, group III rich growth conditions in molecular beam epitaxy are usually preferred leading to group III (Ga)-rich surfaces. Here, we use low-temperature scanning tunneling microscopy to reveal a uniform distribution of native gallium adatoms with a density of 0.3%-0.5% of a monolayer on the clean, as-grown surface of nitrogen polar GaN(0001̅) having the centered 6 × 12 reconstruction. Unseen at room temperature, these Ga adatoms are strongly bound to the surface but move with an extremely low surface diffusion barrier and a high density saturation coverage in thermodynamic equilibrium with Ga droplets. Furthermore, the Ga adatoms reveal an intrinsic surface chirality and an asymmetric site occupation. These observations can have important impacts in the understanding of gallium nitride surfaces.

  9. Gallium nitride based logpile photonic crystals.

    Science.gov (United States)

    Subramania, Ganapathi; Li, Qiming; Lee, Yun-Ju; Figiel, Jeffrey J; Wang, George T; Fischer, Arthur J

    2011-11-09

    We demonstrate a nine-layer logpile three-dimensional photonic crystal (3DPC) composed of single crystalline gallium nitride (GaN) nanorods, ∼100 nm in size with lattice constants of 260, 280, and 300 nm with photonic band gap in the visible region. This unique GaN structure is created through a combined approach of a layer-by-layer template fabrication technique and selective metal organic chemical vapor deposition (MOCVD). These GaN 3DPC exhibit a stacking direction band gap characterized by strong optical reflectance between 380 and 500 nm. By introducing a "line-defect" cavity in the fifth (middle) layer of the 3DPC, a localized transmission mode with a quality factor of 25-30 is also observed within the photonic band gap. The realization of a group III nitride 3DPC with uniform features and a band gap at wavelengths in the visible region is an important step toward realizing complete control of the electromagnetic environment for group III nitride based optoelectronic devices.

  10. Investigation on gallium ions impacting monolayer graphene

    Directory of Open Access Journals (Sweden)

    Xin Wu

    2015-06-01

    Full Text Available In this paper, the physical phenomena of gallium (Ga+ ion impacting monolayer graphene in the nanosculpting process are investigated experimentally, and the mechanisms are explained by using Monte Carlo (MC and molecular dynamics (MD simulations. Firstly, the MC method is employed to clarify the phenomena happened to the monolayer graphene target under Ga+ ion irradiation. It is found that substrate has strong influence on the damage mode of graphene. The mean sputtering yield of graphene under 30 keV Ga+ ion irradiation is 1.77 and the least ion dose to completely remove carbon atoms in graphene is 21.6 ion/nm2. Afterwards, the focused ion beam over 21.6 ion/nm2 is used for the irradiation on a monolayer graphene supported by SiO2 experimentally, resulting in the nanostructures, i.e., nanodot and nanowire array on the graphene. The performances of the nanostructures are characterized by atomic force microscopy and Raman spectrum. A plasma plume shielding model is put forward to explain the nanosculpting results of graphene under different irradiation parameters. In addition, two damage mechanisms are found existing in the fabrication process of the nanostructures by using empirical MD simulations. The results can help us open the possibilities for better control of nanocarbon devices.

  11. Investigation on gallium ions impacting monolayer graphene

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Xin; Zhao, Haiyan, E-mail: hyzhao@tsinghua.edu.cn; Yan, Dong; Pei, Jiayun [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, P. R. Chinaand Department of Mechanical Engineering, Tsinghua University, Beijing 100084 (China)

    2015-06-15

    In this paper, the physical phenomena of gallium (Ga{sup +}) ion impacting monolayer graphene in the nanosculpting process are investigated experimentally, and the mechanisms are explained by using Monte Carlo (MC) and molecular dynamics (MD) simulations. Firstly, the MC method is employed to clarify the phenomena happened to the monolayer graphene target under Ga{sup +} ion irradiation. It is found that substrate has strong influence on the damage mode of graphene. The mean sputtering yield of graphene under 30 keV Ga{sup +} ion irradiation is 1.77 and the least ion dose to completely remove carbon atoms in graphene is 21.6 ion/nm{sup 2}. Afterwards, the focused ion beam over 21.6 ion/nm{sup 2} is used for the irradiation on a monolayer graphene supported by SiO2 experimentally, resulting in the nanostructures, i.e., nanodot and nanowire array on the graphene. The performances of the nanostructures are characterized by atomic force microscopy and Raman spectrum. A plasma plume shielding model is put forward to explain the nanosculpting results of graphene under different irradiation parameters. In addition, two damage mechanisms are found existing in the fabrication process of the nanostructures by using empirical MD simulations. The results can help us open the possibilities for better control of nanocarbon devices.

  12. Study of ac electrical properties of aluminium-epoxy composites

    Energy Technology Data Exchange (ETDEWEB)

    Elimat, Z M [Applied Science Department, Ajloun University College, Al-Balqa Applied University, Amman (Jordan); Zihlif, A M [Physics Department, University of Jordan, Amman (Jordan); Ragosta, G [Institute of Chemistry and Polymer Technology (ICTP), CNR-Possouli, Napoli (Italy)], E-mail: adzh@ju.edu.jo

    2008-08-21

    Ac electrical properties of aluminium flakes-epoxy composites were studied as a function of the composition, frequency and temperature. The dielectric constant increased smoothly with an increase in the concentration of aluminium. An increase in the dielectric constant was observed with the temperature as well as with a decrease in the frequency. The observed increase in the values of the dielectric constant with the aluminium concentration was attributed to interfacial polarization. It was found that ac electrical conductivity increases with increasing content of aluminium, temperature and frequency. The observed enhancement in ac conductivity is attributed to the increase in the number of conduction paths created by the aluminium flake contacts in the composite to give a higher electrical conductivity. Also, the activation energy of aluminium flakes-epoxy composites was determined, as well as the values of the dielectric constant. Compared with various theoretical models, Bruggman's formula gives a better fit. The universal power-law model of ac conductivity is observed in epoxy-aluminium composites. The calculated power exponent (about unity) is physically acceptable within this applied model.

  13. Does allergen-specific immunotherapy induce contact allergy to aluminium?

    Science.gov (United States)

    Netterlid, Eva; Hindsén, Monica; Siemund, Ingrid; Björk, Jonas; Werner, Sonja; Jacobsson, Helene; Güner, Nuray; Bruze, Magnus

    2013-01-01

    Persistent, itching nodules have been reported to appear at the injection site after allergen-specific immuno-therapy with aluminium-precipitated antigen extract, occasionally in conjunction with contact allergy to aluminium. This study aimed to quantify the development of contact allergy to aluminium during allergen-specific immunotherapy. A randomized, controlled, single-blind multicentre study of children and adults entering allergen-specific immunotherapy was performed using questionnaires and patch-testing. A total of 205 individuals completed the study. In the 3 study groups all subjects tested negative to aluminium before allergen-specific immunotherapy and 4 tested positive after therapy. In the control group 4 participants tested positive to aluminium. Six out of 8 who tested positive also had atopic dermatitis. Positive test results were found in 5/78 children and 3/127 adults. Allergen-specific immunotherapy was not shown to be a risk factor for contact allergy to aluminium. Among those who did develop aluminium allergy, children and those with atopic dermatitis were more highly represented.

  14. Antibacterial effect of gallium and silver on Pseudomonas aeruginosa treated with gallium-silver-phosphate-based glasses.

    Science.gov (United States)

    Valappil, Sabeel P; Higham, Susan M

    2014-01-01

    Gallium and silver incorporated phosphate-based glasses were evaluated for antibacterial effect on the growth of Pseudomonas aeruginosa, which is a leading cause of opportunistic infections. The glasses were produced by conventional melt quenching methods at 1100°C for 1 h. Glass degradation studies were conducted by weight loss method. Disc diffusion assay and cell viability assay displayed statistically significant (p ≤ 0.0005) effect on P. aeruginosa growth which increased with decreasing calcium content in the glasses. The gallium ion release rates (1.83, 0.69 and 0.48 ppm·h(-1)) and silver ion release rates (2.97, 2.84 and 2.47 ppm·h(-1)) were found to account for this variation. Constant depth film fermentor was used to evaluate the anti-biofilm properties of the glasses. Both gallium and silver in the glass contributed to biofilm growth inhibitory effect on P. aeruginosa (up to 2.68 reduction in log 10 values of the viable counts compared with controls). The glasses were found to deliver gallium and silver in a controlled way and exerted cumulative antibacterial action on planktonic and biofilm growth of P. aeruginosa. The antibacterial, especially anti-biofilm, properties of the gallium and silver incorporated phosphate-based glasses make them a potential candidate to combat infections caused by P. aeruginosa.

  15. Gallium scintigraphy in Hansen's disease

    Energy Technology Data Exchange (ETDEWEB)

    Braga, F.J.H.N. (Hopital Henri-Mondor, 75 - Paris (France). Service de Biophysique de Medecine Nucleaire Sao Paulo Univ., SP (Brazil). Centro de Medicina Nuclear); Araejo, E.B.; Camargo, E.E. (Sao Paulo Univ., SP (Brazil). Centro de Medicina Nuclear); Tedesco-Marchesi, L.C.M.; Rivitti, M.C.M. (Sao Paulo Univ., SP (Brazil). Servicio de Dermatologia); Bouladour, H.; Galle, P. (Hopital Henri-Mondor, 75 - Paris (France). Service de Biophysique de Medecine Nucleaire)

    1991-11-01

    Gallium 67 imaging was used in 12 patients with documented Hansen's disease undergoing treatment or not in an attempt to determine the pattern of the disease. Diagnosis was confirmed by histopathology in all patients. The Mitsuda reaction was seen in all patients. Specific nuclear studies were performed when needed to evaluate particular organs better. Gallium 67 images show homogeneous, diffuse and moderate accumulation over the entire skin surface (except for the face) of untreated patients with multibacillary disease. The face skin in these cases presented homogeneous, diffuse but very marked uptake of gallium. Internal organ involvement was variable. There was a very good correlation among clinical, scintigraphical, immunological and histopathological data. The pattern of the body skin ('skin outlining') and face skin ('beard distribution') may be distinct for untreated patients with multibacillary leprosy. (orig.).

  16. Spectrofluorimetric determination of gallium with calon-carboxylic acid

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    A simple and sensitive spectrofluorimetric procedure for the analysis of microquantities of gallium in alloy wasdescribed. The method is based on the formation of Ga(Ⅲ)-CCA (calon-carboxylic acid) complex. The emission of thefluorescent complex was measured at λ = 620 nm with excitation at λ = 584 nm. A good linearity was found in the galliumrange of 0.7-280 ng/mL. The precision of the method is good and the relative standard deviation is 1.9% for a gallium stan-dard solution of 70 ng/mL. The procedure was proved to be suitable in terms of accuracy and selectivity for the mi-croamount of gallium in alloy.

  17. Thickness Evaluation of Aluminium Plate Using Pulsed Eddy Current Technique

    Science.gov (United States)

    Singh, Gurpartap; Bapat, Harsh Madhukar; Singh, Bhanu Pratap; Bandyopadhyay, Manojit; Puri, Rakesh Kumar; Badodkar, Deepak Narayanrao

    2013-10-01

    This paper describes a pulsed eddy current (PEC) based non-destructive testing system used for detection of thickness variation in aluminium plate. A giant magneto-resistive sensor has been used instead of pick up coil for detecting resultant magnetic field. The PEC response signals obtained from 1 to 5 mm thickness change in aluminium plate were investigated. Two time domain features, namely peak value and time to peak, of PEC response were used for extracting information about thickness variation in aluminium plate. The variation of peak value and time to peak with thickness was compared. A program was developed to display the thickness variation of the tested sample.

  18. Corrosion issues of powder coated AA6060 aluminium profiles

    DEFF Research Database (Denmark)

    Din, Rameez Ud; Valgarðsson, Smári; Jellesen, Morten Stendahl

    2015-01-01

    In this study detailed microstructural investigation of the reason for unexpected corrosion of powder coated aluminium alloy AA6060 windows profiles has been performed. The results from this study reveals that the failure of the window profiles was originated from the surface defects present...... on the extruded AA6060 aluminium profile after metallurgical process prior to powder coating. Surface defects are produced due to intermetallic particles in the alloy, which disturb the flow during the extrusion process. The corrosion mechanism leading to the failure of the powder coated AA6060 aluminium profiles...

  19. Effects of aluminium surface morphology and chemical modification on wettability

    DEFF Research Database (Denmark)

    Rahimi, Maral; Fojan, Peter; Gurevich, Leonid;

    2014-01-01

    Aluminium alloys are some of the predominant metals in industrial applications such as production of heat exchangers, heat pumps. They have high heat conductivity coupled with a low specific weight. In cold working conditions, there is a risk of frost formation on the surface of aluminium...... in the presence of water vapour, which can lead to the deterioration of equipment performance. This work addresses the methods of surface modification of aluminium and their effect of the underlying surface morphology and wettability, which are the important parameters for frost formation. Three groups of real...

  20. Cold forming of aluminium - State of the art

    DEFF Research Database (Denmark)

    Bay, Niels

    1997-01-01

    to that of unalloyed steel. After description of the different types of alloys and their individual properties and applications, the special requirements for tool design by cold forging in aluminium is discussed. Finally, a large number of industrial examples on cold forged aluminium components are presented. (C) 1997......The ongoing development of cold forging technology has been manifested lately by the increasing application of components in cold forged aluminium alloys. Applying precipitation hardening alloys components with great strength/weight ratio can be produced with a strength comparable...

  1. Study of fatigue behaviour of 7475 aluminium alloy

    Indian Academy of Sciences (India)

    B B Verma; J D Atkinson; M Kumar

    2001-04-01

    Fatigue properties of a thermomechanically treated 7475 aluminium alloy have been studied in the present investigation. The alloy exhibited superior fatigue life compared to conventional structural aluminium alloys and comparable stage II crack growth rate. It was also noticed that the fatigue crack initiated from a surface grain and the crack extension was dominated by ductile striations. Analysis also revealed that this alloy possessed fracture toughness and tensile properties superior to that noticed with other structural aluminium alloys. Therefore the use of this alloy can safely reduce the overall weight of the aircraft.

  2. Optimization of Magnesium Metal into Commercially Pure Aluminium

    Directory of Open Access Journals (Sweden)

    Vandana J Rao

    2014-02-01

    Full Text Available The present investigation, involve development of Al-Mg systems by addition of magnesium into commercially pure aluminium. The amounts of magnesium added into commercially pure aluminium are of 1 and 2 wt%. The recoveries of magnesium are around 85-90%.Remaining Mg react with oxygen and float on the liquid aluminium. Presence of magnesium creates two phenomena. One is solid solution hardening and other is intermetallics formation. Both the phenomena checked by microstructural changes and by measuring the electrical conductivity values. By increasing the Mg, content mechanical properties (hardness and tensile strength increases and electrical conductivity decreases.

  3. Effect of pressurized steam on AA1050 aluminium

    DEFF Research Database (Denmark)

    Jariyaboon, Manthana; Møller, Per; Ambat, Rajan

    2012-01-01

    Purpose - The purpose of this paper is to understand the effect of pressurized steam on surface changes, structures of intermetallic particles and corrosion behavior of AA1050 aluminium. Design/methodology/approach - Industrially pure aluminium (AA1050, 99.5 per cent) surfaces were exposed...... reactivities was observed due to the formation of the compact oxide layer. Originality/value - This paper reveals a detailed investigation of how pressurized steam can affect the corrosion behaviour of AA1050 aluminium and the structure of Fe-containing intermetallic particles....

  4. Preparation of Aluminium Oxynitride by Carbothermal Reduction of Aluminium Oxide in a Flowing N2 Atmosphere

    Institute of Scientific and Technical Information of China (English)

    LIYa-wei; YUANRun-zhang; 等

    1996-01-01

    Carbothermal reduction of alumina into aluminium oxynitride(AlON) spinel in a flowing nitrogen atmosphere was studied.The effects of Al2O3/C ratio temperature,soaking time,heating rate molding pressure of samples,and nitrogen flow rate on reactions were investigated.Then the stability of AlON was elucidated and AlON wa confirmed as an intermediate compound in reduction of alumina.

  5. Pseudomembranous colitis: a possible role for Gallium scanning

    Energy Technology Data Exchange (ETDEWEB)

    Kramer, E.L.; Charap, M.; Sanger, J.J.; Tiu, S.S.

    1983-10-01

    A case of antibiotic-associated pseudomembranous colitis is presented in which the Gallium scan was the first diagnostic modality to alert the clinicians to the existence of an inflammatory bowel process. The mechanism of localization of the radiopharmaceutical in inflammatory bowel disease is discussed. Although colonoscopy is far more specific and should be the first-line diagnostic tool used in assessing the presence of pseudomembranous colitis, Gallium scanning may have a role in the follow-up of treatment and in cases of relapse.

  6. Magnetostriction and magnetic heterogeneities in iron-gallium.

    Science.gov (United States)

    Laver, M; Mudivarthi, C; Cullen, J R; Flatau, A B; Chen, W-C; Watson, S M; Wuttig, M

    2010-07-09

    Iron-gallium alloys Fe(1-x)Ga(x) exhibit an exceptional increase in magnetostriction with gallium content. We present small-angle neutron scattering investigations on a Fe(0.81)Ga(0.19) single crystal. We uncover heterogeneities with an average spacing of 15 nm and with magnetizations distinct from the matrix. The moments in and around the heterogeneities are observed to reorient with an applied magnetic field or mechanical strain. We discuss the possible roles played by nanoscale magnetic heterogeneities in the mechanism for magnetostriction in this material.

  7. Magnetostriction and Magnetic Heterogeneities in Iron-Gallium

    DEFF Research Database (Denmark)

    Laver, Mark; Mudivarthi, C.; Cullen, J.R.;

    2010-01-01

    Iron-gallium alloys Fe1-xGax exhibit an exceptional increase in magnetostriction with gallium content. We present small-angle neutron scattering investigations on a Fe0.81Ga0.19 single crystal. We uncover heterogeneities with an average spacing of 15 nm and with magnetizations distinct from...... the matrix. The moments in and around the heterogeneities are observed to reorient with an applied magnetic field or mechanical strain. We discuss the possible roles played by nanoscale magnetic heterogeneities in the mechanism for magnetostriction in this material. © 2010 The American Physical Society...

  8. Laser spectroscopy of gallium isotopes using the ISCOOL RFQ cooler

    CERN Multimedia

    Blaum, K; Kowalska, M; Ware, T; Procter, T J

    2007-01-01

    We propose to study the radioisotopes of gallium (Z=31) by collinear laser spectroscopy using the ISCOOL RFQ ion cooler. The proposed measurements on $^{62-83}$Ga will span both neutron-deficient and neutron-rich isotopes. Of key interest is the suggested development of a proton-skin in the neutron-deficient isotopes. The isotope shifts measured by laser spectroscopy will be uniquely sensitive to this feature. The measurements will also provide a wealth of new information on the gallium nuclear spins, static moments and nuclear charge radii.

  9. Spectroscopy of titanium-doped gallium lanthanum sulfide glass

    OpenAIRE

    2008-01-01

    Titanium-doped gallium lanthanum sulfide (Ti:GLS) and gallium lanthanum oxysulfide (Ti:GLSO) glasses have an absorption band at similar to 500-600 nm that cannot be fully resolved because of its proximity to the band edge of the glass. At concentrations >0.5% a shoulder at 980 nm is observed in Ti:GLS but not in Ti :GLSO. The emission spectra of Ti:GLS and T :GLSO both peak at 900 nm with lifetimes of 67 and 97)us, respectively. We propose that the absorption at similar to 600 nm is due to th...

  10. Neutron detection using boron gallium nitride semiconductor material

    OpenAIRE

    Katsuhiro Atsumi; Yoku Inoue; Hidenori Mimura; Toru Aoki; Takayuki Nakano

    2014-01-01

    In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to α-rays but poor sensitivity to γ-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in ...

  11. Indium Antimonide Nanowires: Synthesis and Properties

    Science.gov (United States)

    Shafa, Muhammad; Akbar, Sadaf; Gao, Lei; Fakhar-e-Alam, Muhammad; Wang, Zhiming M.

    2016-03-01

    This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs) growth and their potential applications in the industry. In the first section, historical studies on the growth of InSb NWs have been presented, while in the second part, a comprehensive overview of the various synthesis techniques is demonstrated briefly. The major emphasis of current review is vapor phase deposition of NWs by manifold techniques. In addition, author review various protocols and methodologies employed to generate NWs from diverse material systems via self-organized fabrication procedures comprising chemical vapor deposition, annealing in reactive atmosphere, evaporation of InSb, molecular/ chemical beam epitaxy, solution-based techniques, and top-down fabrication method. The benefits and ill effects of the gold and self-catalyzed materials for the growth of NWs are explained at length. Afterward, in the next part, four thermodynamic characteristics of NW growth criterion concerning the expansion of NWs, growth velocity, Gibbs-Thomson effect, and growth model were expounded and discussed concisely. Recent progress in device fabrications is explained in the third part, in which the electrical and optical properties of InSb NWs were reviewed by considering the effects of conductivity which are diameter dependent and the applications of NWs in the fabrications of field-effect transistors, quantum devices, thermoelectrics, and detectors.

  12. Subnanometer Thin β-Indium Sulfide Nanosheets.

    Science.gov (United States)

    Acharya, Shinjita; Sarkar, Suresh; Pradhan, Narayan

    2012-12-20

    Nanosheets are a peculiar kind of nanomaterials that are grown two-dimensionally over a micrometer in length and a few nanometers in thickness. Wide varieties of inorganic semiconductor nanosheets are already reported, but controlling the crystal growth and tuning their thickness within few atomic layers have not been yet explored. We investigate here the parameters that determine the thickness and the formation mechanism of subnanometer thin (two atomic layers) cubic indium sulfide (In2S3) nanosheets. Using appropriate reaction condition, the growth kinetics is monitored by controlling the decomposition rate of the single source precursor of In2S3 as a function of nucleation temperature. The variation in the thickness of the nanosheets along the polar [111] direction has been correlated with the rate of evolved H2S gas, which in turn depends on the rate of the precursor decomposition. In addition, it has been observed that the thickness of the In2S3 nanosheets is related to the nucleation temperature.

  13. Protection of aluminium by duplex coatings

    Energy Technology Data Exchange (ETDEWEB)

    Musil, J. [Ceska Akademie Ved, Prague (Czech Republic). Fyzikalni Ustav; Vlcek, J. [West Bohemia Univ., Plzen (Czech Republic). Dept. of Phys.; Jezek, V. [West Bohemia Univ., Plzen (Czech Republic). Dept. of Phys.; Benda, M. [West Bohemia Univ., Plzen (Czech Republic). Dept. of Phys.

    1995-11-01

    The paper reports on a new way of producing duplex coatings consisting of two steps. First, the substrate is coated by a physically vapour-deposited coating. Then, this precoated substrate is plasma nitrided or vacuum heat treated. This method was tested in the protection of substrates made of aluminium with a sputtered Ti coating about 5 {mu}m thick. The as-deposited and then plasma-nitrided or vacuum-heat-treated (Ti coating)/(Al substrate) couple was characterized by elemental depth profiles measured by glow discharge optical spectroscopy. It was shown that both the plasma nitriding and vacuum heat treatment process can stimulate a strong interdiffusion between Ti and the substrate elements. It results not only in the formation of a very broad interfacial region with a dramatic redistribution of the substrate elements in the Ti film but also in a formation of intermetallic Ti-Al compounds. This new duplex coating technique is described in detail. (orig.)

  14. Telangiectasia in aluminium workers: a follow up.

    Science.gov (United States)

    Thériault, G; Gingras, S; Provencher, S

    1984-08-01

    A five step investigation was carried out to gain a better understanding of the morbidity that accompanied the development of telangiectasia on aluminium workers and to find its cause. Fifty workers with multiple telangiectasia when matched with normal controls showed the same amount of illness except that evidence of ischaemia on the ECG was found in nine cases and one control. The cases did not show an excess of abnormal biochemical tests. The basic histopathological lesion affected the surrounding tissue rather than the vessels themselves. Working in the current environment and wearing masks seems to protect young workers from developing the lesions. The Soderberg and not the prebake process was associated with the lesions; the causative agent is probably a gas that contains both hydrocarbons and fluoride components emitted from the electrolytic reactors.

  15. Mechanical behaviour of aluminium-lithium alloys

    Indian Academy of Sciences (India)

    N Eswara Prasad; A A Gokhale; P Rama Rao

    2003-02-01

    Aluminium-lithium alloys hold promise of providing a breakthrough response to the crying need for lightweight alloys for use as structurals in aerospace applications. Considerable worldwide research has gone into developing a range of these alloys over the last three decades. As a result, substantial understanding has been developed of the microstructure-based micromechanisms of strengthening, of fatigue and fracture as well as of anisotropy in mechanical properties. However, these alloys have not yet greatly displaced the conventionally used denser Al alloys on account of their poorer ductility, fracture toughness and low cycle fatigue resistance. This review aims to summarise the work pertaining to study of structure and mechanical properties with a view to indicate the directions that have been and can be pursued to overcome property limitations.

  16. Experimental analysis of cut welding in aluminium

    DEFF Research Database (Denmark)

    Dorph, Pernille; De Chiffre, Leonardo; Bay, Niels

    1993-01-01

    Cut welding is a newly developed cold pressure welding process. In the present work, an experimental investigation was carried out analyzing the mechanisms involved in cut welding of a block to a strip. Experiments were carried out in technically pure aluminium. The investigation has involved...... tensile testing and metallographic investigations of the welds. The results show that this variant of cut welding is a very reproducible process giving a weld strength equal to 30-40% the strength of the parent material. The experiments have shown that the reason for this relatively low strength...... is an uneven pressure distribution along the weld due to a wave formed during sliding. Attempts to alter the material flow during sliding are presented....

  17. Silane based coating of aluminium mold

    DEFF Research Database (Denmark)

    2013-01-01

    comprising a chemically bonded monolayer of silane compounds on the at least one surface wherein the silane is a halogenated silane. The at least one surface coated with the anti-stiction coating may be configured to withstand an injection molding process at a pressure above 100 MPa. Furthermore, a mold......A method of preparing an aluminum mold for injection molding is provided, the method comprises the steps of providing an aluminum mold having a least one surface, subjecting the at least one surface to a gas or liquid phase silane to thereby form an anti-stiction coating, the anti-stiction coating...... having at least one closed cavity is provided, at least one surface of the at least one cavity being an aluminium surface coated with a silane based coating layer. The silane based anti-stiction coating improves the anti-stiction properties of the mold which may allow for molding and demolding...

  18. Nonlinear radiation response of n-doped indium antimonide and indium arsenide in intense terahertz field

    Science.gov (United States)

    Gong, Jiao-Li; Liu, Jin-Song; Chu, Zheng; Yang, Zhen-Gang; Wang, Ke-Jia; Yao, Jian-Quan

    2016-10-01

    The nonlinear radiation responses of two different n-doped bulk semiconductors: indium antimonide (InSb) and indium arsenide (InAs) in an intense terahertz (THz) field are studied by using the method of ensemble Monte Carlo (EMC) at room temperature. The results show that the radiations of two materials generate about 2-THz periodic regular spectrum distributions under a high field of 100 kV/cm at 1-THz center frequency. The center frequencies are enhanced to about 7 THz in InSb, and only 5 THz in InAs, respectively. The electron valley occupancy and the percentage of new electrons excited by impact ionization are also calculated. We find that the band nonparabolicity and impact ionization promote the generation of nonlinear high frequency radiation, while intervalley scattering has the opposite effect. Moreover, the impact ionization dominates in InSb, while impact ionization and intervalley scattering work together in InAs. These characteristics have potential applications in up-convension of THz wave and THz nonlinear frequency multiplication field. Project supported by the National Natural Science Foundation of China (Grant Nos. 11574105 and 61177095), the Natural Science Foundation of Hubei Province, China (Grant Nos. 2012FFA074 and 2013BAA002), the Wuhan Municipal Applied Basic Research Project, China (Grant No. 20140101010009), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 2013KXYQ004 and 2014ZZGH021).

  19. Anodic aluminium oxide catalytic membranes for asymmetric epoxidation.

    Science.gov (United States)

    Cho, So-Hye; Walther, Nolan D; Nguyen, SonBinh T; Hupp, Joseph T

    2005-11-14

    Catechol-functionalized (salen)Mn complexes can be supported on mesoporous anodized aluminium oxide disks to yield catalytic membranes that are highly active in the enantioselective epoxidation of olefins when being deployed in a forced-through-flow reactor.

  20. COMPARATION BETWEEN NONDESTRUCTIVE TESTING METHODS FOR THE ALUMINIUM BRAZED PIECES

    Directory of Open Access Journals (Sweden)

    Dan NIŢOI

    2014-05-01

    Full Text Available Presented paper refers to different control methods used in aluminium brazed joining because of possible defects. Low joining complexity permits exact damages position in relation with materials geometry.

  1. Aluminium leaching from red mud by filamentous fungi.

    Science.gov (United States)

    Urík, Martin; Bujdoš, Marek; Milová-Žiaková, Barbora; Mikušová, Petra; Slovák, Marek; Matúš, Peter

    2015-11-01

    This contribution investigates the efficient and environmentally friendly aluminium leaching from red mud (bauxite residue) by 17 species of filamentous fungi. Bioleaching experiments were examined in batch cultures with the red mud in static, 7-day cultivation. The most efficient fungal strains in aluminium bioleaching were Penicillium crustosum G-140 and Aspergillus niger G-10. The A. niger G-10 strain was capable to extract up to approximately 141 mg·L(-1) of aluminium from 0.2 g dry weight red mud. Chemical leaching with organic acids mixture, prepared according to A. niger G-10 strain's respective fungal excretion during cultivation, proved that organic acids significantly contribute to aluminium solubilization from red mud.

  2. Incremental forming of aluminium alloys in cryogenic environment

    Science.gov (United States)

    Vanhove, Hans; Mohammadi, Amirahmad; Duflou, Joost R.

    2016-10-01

    Incremental Sheet Forming processes suffer from stringent forming limits, restricting the range of producible geometries. Through in-process cooling of the sheet to cryogenic level, this paper explores the potential of altering material properties benefiting the formability and residual hardness of different aluminium alloys. Global cooling of aluminium sheets with liquid nitrogen and dry ice allows to reach temperatures of 78K and 193K respectively. Extended with experiments at room temperature (293K), these tests form a base for comparison of surface quality, formability and residual hardness. As an aluminium alloy commonly used for its high strength to weight ratio, but suffering from limited formability compared to draw-quality steels, AA5083-H111 is of interest for cryogenic treatment. AA1050-H24 is included in the test campaign as a base for commercially pure aluminium.

  3. Aluminium dynamics and proton buttering in undistributed samples of acidified forest soils; Aluminium-Dynamik und Protonenpufferung in ungestoerten Proben versauerter Waldboeden

    Energy Technology Data Exchange (ETDEWEB)

    Fuchs, E.

    1992-12-31

    In this work non-displaced soil samples were used to test the reaction of acidified forest soils in the aluminium buffering range to different proton concentrations. The examined quantities were the proton buffering rate in the macropore spaces and the correlated rate of aluminium release. Furthermore, the types of aluminium bondage occuring in the soil solution and their influence on the aluminium dynamics within the profile were determined. The significance of species distribution for the interpretation of the toxic potential of aluminium is illuminated. The influence of soil structure on proton buffering, aluminium release and species distribution is described from a global viewpoint. (orig.) [Deutsch] In der vorliegenden Arbeit wird an natuerlich gelagerten Bodenproben die Reaktion versauerter Waldboeden im Aluminium-Pufferbereich auf unterschiedlich starke Protonenbelastungen untersucht. Dabei interessiert die Rate der Protonenpufferung im Makroporenraum einhergehend mit der Menge freigesetzten Aluminiums. Darueberhinaus wird untersucht, welche Aluminium-Bindungsformen in der Bodenloesung vorliegen und welchen Einfluss diese auf die Aluminium-Dynamik innerhalb des Profils haben. Die Bedeutung der Speziesverteilung fuer die Interpretation potentieller Aluminium-Toxizitaet wird beleuchtet. Uebergreifend wird der Einfluss der Bodenstruktur auf Protonenpufferung, Aluminium-Freisetzung sowie Speziesverteilung herausgestellt. (orig.)

  4. Numerical Simulation on Electrical-Thermal Properties of Gallium-Nitride-Based Light-Emitting Diodes Embedded in Board

    Directory of Open Access Journals (Sweden)

    Xing-ming Long

    2012-01-01

    Full Text Available The electrical-thermal characteristics of gallium-nitride- (GaN- based light-emitting diodes (LED, packaged by chips embedded in board (EIB technology, were investigated using a multiphysics and multiscale finite element code, COMSOL. Three-dimensional (3D finite element model for packaging structure has been developed and optimized with forward-voltage-based junction temperatures of a 9-chip EIB sample. The sensitivity analysis of the simulation model has been conducted to estimate the current and temperature distribution changes in EIB LED as the blue LED chip (substrate, indium tin oxide (ITO, packaging structure (bonding wire and chip numbers, and system condition (injection current changed. This method proved the reliability of simulated results in advance and useful material parameters. Furthermore, the method suggests that the parameter match on Shockley's equation parameters, Rs, nideal, and Is, is a potential method to reduce the current crowding effect for the EIB LED. Junction temperature decreases by approximately 3 K to 10 K can be achieved by substrate thinning, ITO, and wire bonding. The nonlinear-decreasing characteristics of total thermal resistance that decrease with an increase in chip numbers are likely to improve the thermal performance of EIB LED modules.

  5. Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides

    Directory of Open Access Journals (Sweden)

    Ichiro Yonenaga

    2015-07-01

    Full Text Available The hardness of wurtzite indium nitride (α-InN films of 0.5 to 4 μm in thickness was measured by the nano-indentation method at room temperature. After investigation of crystalline quality by x-ray diffraction, the hardness and Young’s modulus were determined to be 8.8 ± 0.4 and 184 ± 5 GPa, respectively, for the In (0001- and N ( 000 1 ̄ -growth faces of InN films. The bulk and shear moduli were then derived to be 99 ± 3 and 77 ± 2 GPa, respectively. The Poisson’s ratio was evaluated to be 0.17 ± 0.03. The results were examined comprehensively in comparison with previously reported data of InN as well as those of other nitrides of aluminum nitride and gallium nitride. The underlying physical process determining the moduli and hardness was examined in terms of atomic bonding and dislocation energy of the nitrides and wurtzite zinc oxide.

  6. Metal-Ceramic Interfaces in Laser Coated Aluminium Alloys

    NARCIS (Netherlands)

    Zhou, X.B.; Hosson, J.Th.M. De

    1994-01-01

    A novel process was developed to firmly coat an aluminium alloy, Al6061, with α-Al2O3 by means of laser processing. In this approach a mixture of SiO2 and Al powder was used to inject in the laser melted surface of aluminium. A reaction product α-Al2O3 layer of a thickness of 100 µm was created whic

  7. China’s Export of Fabricated Aluminium Keeps Rising

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    <正>Affected by the State macro economic adjustment policies, China’s export of primary aluminium has decreased obviously. However, China’s export of fabricated aluminum is increasing rapidly, which has led to the investment rush of the aluminium industry, leading to the serious concern by the government. Market rumors are spreading that the government will soon adjust the export tax rebate rates so as to curb such a trend.

  8. Behaviour and modelling of selfpiercing riveted connections using aluminium rivets

    OpenAIRE

    Hoang, Nguyen-Hieu

    2011-01-01

    The present thesis is concerned with the behaviour and modelling of self-piercing riveted connections using aluminium rivets. The objective has been to establish a database on the behaviour of self-piercing riveted connections using aluminium rivets with respect to the riveting process, the mechanical behaviour of single riveted connections and the structural behaviour of riveted joints. The objective has been met by a combination of laboratory tests, modelling and non-linear finite element n...

  9. Adhesive Bonding of Aluminium Alloy A5754 by Epoxy Resins

    Directory of Open Access Journals (Sweden)

    Ivan Michalec

    2013-01-01

    Full Text Available Joining thin sheets of aluminium and its alloys is a promising area in the field of joining materials. Nowadays, joining methods that do not melt the material itself are increasingly being utilised. This paper deals with adhesive bonding of aluminium alloy A5754 by two-component epoxy resins. Theresults show that joints bonded by Hysol 9466 have appropriate mechanical properties, but that joints bonded by Hysol 9492 have better thermal stability.

  10. An interaction of beta-amyloid with aluminium in vitro.

    Science.gov (United States)

    Exley, C; Price, N C; Kelly, S M; Birchall, J D

    1993-06-21

    We have used circular dichroism spectroscopy to confirm that, in a membrane-mimicking solvent, A beta P(1-40) adopts a partially helical conformation and we have demonstrated the loss of this structure in the presence of physiologically relevant concentrations of aluminium. This is the first evidence of a direct biochemical interaction between aluminium and beta-amyloid and may have important implications for the pathogenesis of Alzheimer's disease.

  11. Melting and solidification of bismuth inclusions in aluminium

    DEFF Research Database (Denmark)

    Thoft, N.B.; Bohr, J.; Buras, B.

    1995-01-01

    Supercooling of crystalline bismuth inclusions in aluminium crystals has been observed and studied with different techniques: x-ray diffraction, in situ Rutherford backscattering/channelling spectrometry and transmission electron microscopy. The results of the measurements with different experime......Supercooling of crystalline bismuth inclusions in aluminium crystals has been observed and studied with different techniques: x-ray diffraction, in situ Rutherford backscattering/channelling spectrometry and transmission electron microscopy. The results of the measurements with different...

  12. Lake restoration with aluminium, bentonite and Phoslock: the effect on sediment stability and light attenuation

    DEFF Research Database (Denmark)

    Egemose, Sara; Reitzel, Kasper; Flindt, Mogens

    treatments on aluminium mobility, sediment stability or light climate. A laboratory flume experiment including three shallow Danish lakes was conducted. We measured the effects of aluminium, Phoslock (a commercial product), bentonite, and a combination of bentonite/aluminium. Each treatment caused a varying...... consolidation of the sediment. The largest consolidation occurred using Phoslock- and bentonite-addition followed by bentonite/aluminium-addition, whereas aluminium alone had no effect. Sediment stability thresholds were measured before and after addition. Especially Phoslock, but also bentonite and bentonite....../aluminium increased sediment erosion threshold, with respectively 200%, 43% and 57%. Aluminium, bentonite/aluminium, and Phoslock improved the light conditions in the water phase, with respectively 60%, 57% and 50%, whereas bentonite created higher turbidity. Conclusively aluminium improved the light conditions...

  13. The binding, transport and fate of aluminium in biological cells.

    Science.gov (United States)

    Exley, Christopher; Mold, Matthew J

    2015-04-01

    Aluminium is the most abundant metal in the Earth's crust and yet, paradoxically, it has no known biological function. Aluminium is biochemically reactive, it is simply that it is not required for any essential process in extant biota. There is evidence neither of element-specific nor evolutionarily conserved aluminium biochemistry. This means that there are no ligands or chaperones which are specific to its transport, there are no transporters or channels to selectively facilitate its passage across membranes, there are no intracellular storage proteins to aid its cellular homeostasis and there are no pathways which evolved to enable the metabolism and excretion of aluminium. Of course, aluminium is found in every compartment of every cell of every organism, from virus through to Man. Herein we have investigated each of the 'silent' pathways and metabolic events which together constitute a form of aluminium homeostasis in biota, identifying and evaluating as far as is possible what is known and, equally importantly, what is unknown about its uptake, transport, storage and excretion.

  14. Volatilisation and oxidation of aluminium scraps fed into incineration furnaces.

    Science.gov (United States)

    Biganzoli, Laura; Gorla, Leopoldo; Nessi, Simone; Grosso, Mario

    2012-12-01

    Ferrous and non-ferrous metal scraps are increasingly recovered from municipal solid waste incineration bottom ash and used in the production of secondary steel and aluminium. However, during the incineration process, metal scraps contained in the waste undergo volatilisation and oxidation processes, which determine a loss of their recoverable mass. The present paper evaluates the behaviour of different types of aluminium packaging materials in a full-scale waste to energy plant during standard operation. Their partitioning and oxidation level in the residues of the incineration process are evaluated, together with the amount of potentially recoverable aluminium. About 80% of post-consumer cans, 51% of trays and 27% of foils can be recovered through an advanced treatment of bottom ash combined with a melting process in the saline furnace for the production of secondary aluminium. The residual amount of aluminium concentrates in the fly ash or in the fine fraction of the bottom ash and its recovery is virtually impossible using the current eddy current separation technology. The average oxidation levels of the aluminium in the residues of the incineration process is equal to 9.2% for cans, 17.4% for trays and 58.8% for foils. The differences between the tested packaging materials are related to their thickness, mechanical strength and to the alloy.

  15. Role of magnesium in alleviation of aluminium toxicity in plants.

    Science.gov (United States)

    Bose, Jayakumar; Babourina, Olga; Rengel, Zed

    2011-04-01

    Magnesium is pivotal for activating a large number of enzymes; hence, magnesium plays an important role in numerous physiological and biochemical processes affecting plant growth and development. Magnesium can also ameliorate aluminium phytotoxicity, but literature reports on the dynamics of magnesium homeostasis upon exposure to aluminium are rare. Herein existing knowledge on the magnesium transport mechanisms and homeostasis maintenance in plant cells is critically reviewed. Even though overexpression of magnesium transporters can alleviate aluminium toxicity in plants, the mechanisms governing such alleviation remain obscure. Possible magnesium-dependent mechanisms include (i) better carbon partitioning from shoots to roots; (ii) increased synthesis and exudation of organic acid anions; (iii) enhanced acid phosphatase activity; (iv) maintenance of proton-ATPase activity and cytoplasmic pH regulation; (v) protection against an aluminium-induced cytosolic calcium increase; and (vi) protection against reactive oxygen species. Future research should concentrate on assessing aluminium toxicity and tolerance in plants with overexpressed or antisense magnesium transporters to increase understanding of the aluminium-magnesium interaction.

  16. A mechanism for acute aluminium toxicity in fish.

    Science.gov (United States)

    Exley, C; Chappell, J S; Birchall, J D

    1991-08-07

    Aluminium is acutely toxic to fish in acid waters. The gill is the principal target organ and death is due to a combination of ionoregulatory, osmoregulatory and respiratory dysfunction. The toxic mechanism has hitherto received little direct consideration and is unknown. In this paper the mechanism of acute aluminium toxicity is approached from a chemical perspective. Symptomatic evidence of toxicity is taken from the literature and combined with our own research to elucidate a biochemically sound model to describe a possible mechanism of acute aluminium toxicity in fish. The proposed model delineates the chemical conditions immediately adjacent to the gill surface and emphasizes their importance in aluminium's toxic mode of action. The mechanism is shown to be bipartite. Aluminium binding to functional groups both apically located at the gill surface and intracellularly located within lamellar epithelial cells disrupts the barrier properties of the gill epithelium. The concomitant iono- and osmoregulatory dysfunction results in accelerated cell necrosis, sloughing and death of the fish. The mechanism of epithelial cell death is proposed as a general mechanism of aluminium-induced accelerated cell death.

  17. Targeting Gallium to Cancer Cells through the Folate Receptor

    Directory of Open Access Journals (Sweden)

    Nerissa Viola-Villegas

    2008-01-01

    Full Text Available The development of gallium(III compounds as anti-cancer agents for both treatment and diagnosis is a rapidly developing field of research. Problems remain in exploring the full potential of gallium(III as a safe and successful therapeutic agent or as an imaging agent. One of the major issues is that gallium(III compounds have little tropism for cancer cells. We have combined the targeting properties of folic acid (FA with long chain liquid polymer poly(ethylene glycol (PEG ‘spacers’. This FA-PEG unit has been coupled to the gallium coordination complex of 1,4,7,10-tetraazacyclo-dodecane-N,N′,N′′,N′′′-tetraacetic acid (DOTA through amide linkages for delivery into target cells overexpressing the folate receptor (FR. In vitro cytotoxicity assays were conducted against a multi-drug resistant ovarian cell line (A2780/AD that overexpresses the FR and contrasted against a FR free Chinese hamster ovary (CHO cell line. Results are rationalized taking into account stability studies conducted in RPMI 1640 media and HEPES buffer at pH 7.4.

  18. Gallium Nitride MMICs for mm-Wave Power Operation

    NARCIS (Netherlands)

    Quay, R.; Maroldt, S.; Haupt, C.; Heijningen, M. van; Tessmann, A.

    2009-01-01

    In this paper a Gallium Nitride MMIC technology for high-power amplifiers between 27 GHz and 101 GHz based on 150 nm- and 100 nm-gate technologies is presented. The GaN HEMT MMICs are designed using coplanar waveguide transmission-line-technology on 3-inch semi-insulating SiC substrates. The measure

  19. [Dimensional changes of silver and gallium-based alloy].

    Science.gov (United States)

    Ballester, R Y; Markarian, R A; Loguercio, A D

    2001-01-01

    Gallium-based dental alloys were created with the aim of solving the problem of toxicity of mercury. The material shows mechanical properties similar to those of dental amalgam, but researches point out two unfavorable characteristics: great corrosion and excessive post-setting expansion, and the latter is capable of cracking dental structures. The aim of this study was to evaluate, during 7 days, the in vitro dimensional alteration of a gallium dental alloy (Galloy, SDI, Australia), in comparison with a dental amalgam containing zinc (F400, SDI, Australia), as a function of the contact with saline solution (0.9% NaCl) during the setting period. The storage experimental conditions were: storage in dry environment, immersion in saline solution and contamination during condensation. Additionally, the effects of contamination during the trituration of dental amalgam and the effects of protecting the surface of the gallium alloy with a fluid resin were studied. Specimens were stored at 37 degrees C +/- 1 degree C, and measuring was carried out, sequentially, every 24 h during 7 days. When the gallium alloy was either contaminated or immersed, an expansion significantly greater than that observed in the other experimental conditions was noticed after 7 days. The application of a fluid resin to protect the surface of the cylinders was able to avoid the increase in expansion caused by superficial moisture. The amalgam alloy did not show significant dimensional alterations, except when it was contaminated during trituration.

  20. Clinical roles in indium-111 octreotide scintigraphy

    Energy Technology Data Exchange (ETDEWEB)

    Hain, S.F.; Roach, P.J [Royal North Shore Hospital, St Leonards, NSW (Australia). Department of Nuclear Medicine

    1997-12-01

    Full text: Octreotide is being increasingly used in the assessment of various tumour types, particularly those of neuroendocrine origin. It has even been proposed that octreotide scintigraphy should be used as the first localisation technique in such tumours. We present three cases which show different clinical roles for 111 In- octreotide scintigraphy in both evaluating the extent of disease and assessing likely response to somatostatin therapy. In the first case, a 55-year-old male presented with flushing, diarrhoea, weight loss and elevated urinary 5-HIM levels. Clinical examination showed left supraclavicular Iymphadenopathy and CT revealed only paraaortic Iymphadenopathy. In comparison, octreotide scintigraphy revealed much more extensive disease than noted on CT in both the abdomen and chest. Lesions were histologically confirmed as carcinoid tumour. In the second case, a 52-year-old male underwent scintigraphy for staging of small cell lung carcinoma. Similarly, more extensive disease was noted on octreotide scintigraphy than on CT scanning. In the third case, a 1 6-year-old female underwent debulking surgery for a growth hormone and prolactin producing pituitary tumour. The presence of somatostatin receptors was demonstrated by octreotide scintigraphy. This was performed to determine the potential response to somatostatin therapy which has been reported to reduce tumour size in these patients. These cases show a clinical role for {sup 111}In octreotide scintigraphy in the evaluation of disease extent in neuroendocrine tumours as well as some other tumour sub-types. In the first two cases described, scintigraphy revealed more extensive disease than CT scanning. Indium-111 octreotide can also be used to predict the response of such patients to somatostatin therapy

  1. Properties of Polydisperse Tin-doped Dysprosium and Indium Oxides

    Directory of Open Access Journals (Sweden)

    Malinovskaya Tatyana

    2017-01-01

    Full Text Available The results of investigations of the complex permittivity, diffuse-reflectance, and characteristics of crystal lattices of tin-doped indium and dysprosium oxides are presented. Using the methods of spectroscopy and X-ray diffraction analysis, it is shown that doping of indium oxide with tin results in a significant increase of the components of the indium oxide complex permittivity and an appearance of the plasma resonance in its diffuse-reflectance spectra. This indicates the appearance of charge carriers with the concentration of more than 1021 cm−3 in the materials. On the other hand, doping of the dysprosium oxide with the same amount of tin has no effect on its optical and electromagnetic properties.

  2. Indium oxide inverse opal films synthesized by structure replication method

    Science.gov (United States)

    Amrehn, Sabrina; Berghoff, Daniel; Nikitin, Andreas; Reichelt, Matthias; Wu, Xia; Meier, Torsten; Wagner, Thorsten

    2016-04-01

    We present the synthesis of indium oxide (In2O3) inverse opal films with photonic stop bands in the visible range by a structure replication method. Artificial opal films made of poly(methyl methacrylate) (PMMA) spheres are utilized as template. The opal films are deposited via sedimentation facilitated by ultrasonication, and then impregnated by indium nitrate solution, which is thermally converted to In2O3 after drying. The quality of the resulting inverse opal film depends on many parameters; in this study the water content of the indium nitrate/PMMA composite after drying is investigated. Comparison of the reflectance spectra recorded by vis-spectroscopy with simulated data shows a good agreement between the peak position and calculated stop band positions for the inverse opals. This synthesis is less complex and highly efficient compared to most other techniques and is suitable for use in many applications.

  3. China Rescinds the Export Tax on Aluminium Alloys Made by Scrap

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    <正>According to an official from the Tax Regulations Office under China’s State Council, from July 1st 2005, China will rescind the 5 per cent export tax on the aluminium alloys produced by using aluminium alloys scrap. An official from the State Council’s office said that through investigation they found that most aluminium alloys produced from aluminium scrap are not that energy consuming compared to primary aluminium. Starting from January 1st 2005, China decided to collect 5 per cent export tax on aluminium so as to control the industry development connected with high energy cost.

  4. Gallium Oxide Nanostructures for High Temperature Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Chintalapalle, Ramana V. [Univ. of Texas, El Paso, TX (United States)

    2015-04-30

    Gallium oxide (Ga2O3) thin films were produced by sputter deposition by varying the substrate temperature (Ts) in a wide range (Ts=25-800 °C). The structural characteristics and electronic properties of Ga2O3 films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectrometry (EDS), Rutherford backscattering spectrometry (RBS) and spectrophotometric measurements. The effect of growth temperature is significant on the chemistry, crystal structure and morphology of Ga2O3 films. XRD and SEM analyses indicate that the Ga2O3 films grown at lower temperatures were amorphous while those grown at Ts≥500 oC were nanocrystalline. RBS measurements indicate the well-maintained stoichiometry of Ga2O3 films at Ts=300-800 °C. The electronic structure determination indicated that the nanocrystalline Ga2O3films exhibit a band gap of ~5 eV. Tungsten (W) incorporated Ga2O3 films were produced by co-sputter deposition. W-concentration was varied by the applied sputtering-power. No secondary phase formation was observed in W-incorporated Ga2O3 films. W-induced effects were significant on the structure and electronic properties of Ga2O3 films. The band gap of Ga2O3 films without W-incorporation was ~5 eV. Oxygen sensor characteristics evaluated using optical and electrical methods indicate a faster response in W-doped Ga2O3 films compared to intrinsic Ga2O3 films. The results demonstrate the applicability of both intrinsic and W-doped Ga-oxide films for oxygen sensor application at temperatures ≥700 °C.

  5. Study of electrical resistivity of lithium-indium thin films

    Science.gov (United States)

    Chandra, Gyanesh; Katyal, O. P.

    1984-12-01

    Experimental results are presented on the electrical resistivity of lithium-indium films. The resistivity has been studied as a function of temperature (150-300 K), thickness of the films (570-3300 Å) and concentration of Li (11.0-58.7 at. %). The resistivity is observed to be minimum for samples having a Li concentration of 25 and 50 at. %. In general, resistivity varies linearly with temperature but resistivity versus temperature plot shows two distinct regions which have different slopes, i.e., dρ/dT. The role of lithium in indium-lithium films is discussed.

  6. Indium Tin Oxide@Carbon Core–Shell Nanowire and Jagged Indium Tin Oxide Nanowire

    Directory of Open Access Journals (Sweden)

    Wang Yong

    2010-01-01

    Full Text Available Abstract This paper reports two new indium tin oxide (ITO-based nanostructures, namely ITO@carbon core–shell nanowire and jagged ITO nanowire. The ITO@carbon core–shell nanowires (~50 nm in diameter, 1–5 μm in length, were prepared by a chemical vapor deposition process from commercial ITO nanoparticles. A carbon overlayer (~5–10 in thickness was observed around ITO nanowire core, which was in situ formed by the catalytic decomposition of acetylene gas. This carbon overlayer could be easily removed after calcination in air at an elevated temperature of 700°C, thus forming jagged ITO nanowires (~40–45 nm in diameter. The growth mechanisms of ITO@carbon core–shell nanowire and jagged ITO nanowire were also suggested.

  7. Platelet labelling with indium-hydroxypyridinone and indium-hydroxypyranone complexes

    Energy Technology Data Exchange (ETDEWEB)

    Abeysinghe, R.D. (Dept. of Clinical Haematology, University Coll. Medical School, London (United Kingdom)); Ellis, B.L. (Dept. of Pharmacy, Kings Coll., London (United Kingdom)); Hider, R.C. (Dept. of Pharmacy, Kings Coll., London (United Kingdom)); Porter, J.B. (Dept. of Clinical Haematology, University Coll. Medical School, London (United Kingdom))

    1994-10-01

    In order to identify new compounds which label platelets without affecting their function, three classes of metal chelating agents have been compared with oxine for their efficiency of indium-113m platelet labelling and for their short- and long-term effects on platelet function. The 3-hydroxypyridinones (both 2-ones and 4-ones) and 3-hydroxypyranones are bidentate chelators of trivalent metal ions that are neutrally charged in the metal-complexed form and hence gain access to cells readily. The hydroxypyranone ethylmaltol has been compared with the 3-hydroxypyridin-4-one CP94 and to its structurally related lipophilic analogue CP25 as well as with the 3-hydroxypyridin-2-one, CP02. The platelet labelling efficiencies with these ligands were between 75% and 95% of that obtained with oxine, following a 12-min incubation in saline. The optimal concentration for the hydroxypyridin-2-ones and hydroxypyridin-4-ones was approximately 10 [mu]M compared with 100 [mu]M for the hydroxypyranone ethylmaltol and 60 [mu]M for oxine. Oxine and tropolone were found to produce significant inhibition of platelet aggregation to collagen in short-term experiments (10 min) or in longer term (18 and 42 h) ex vivo platelet cultures respectively. By contrast, ethylmaltol had no such inhibitory effects at either time interval. The relatively hydrophilic hydroxypyridin-4-one CP94 showed no inhibitory effects on collagen-induced aggregation in short-term studies, unlike the more lipid-soluble derivative CP25. These results suggest that ethylmaltol and related pyranones may have advantages over oxine and tropolone as indium platelet labelling agents where it is important not to damage platelets by the labelling process itself. (orig.)

  8. Accumulation and toxicity of aluminium-contaminated food in the freshwater crayfish, Pacifastacus leniusculus.

    Science.gov (United States)

    Woodburn, Katie; Walton, Rachel; McCrohan, Catherine; White, Keith

    2011-10-01

    The accumulation and toxicity of aluminium in freshwater organisms have primarily been examined following aqueous exposure. This study investigated the uptake, excretion and toxicity of aluminium when presented as aluminium-contaminated food. Adult Pacifastacus leniusculus were fed control (3 μg aluminium/g) or aluminium-spiked pellets (420 μg aluminium/g) over 28 days. Half the crayfish in each group were then killed and the remainder fed control pellets for a further 10 days (clearance period). Concentrations of aluminium plus the essential metals calcium, copper, potassium and sodium were measured in the gill, hepatopancreas, flexor muscle, antennal gland (kidney) and haemolymph. Histopathological analysis of tissue damage and sub-cellular distribution of aluminium were examined in the hepatopancreas. Haemocyte number and protein concentration in the haemolymph were analysed as indicators of toxicity. The hepatopancreas of aluminium-fed crayfish contained significantly more aluminium than controls on days 28 and 38, and this amount was positively correlated with the amount ingested. More than 50% of the aluminium in the hepatopancreas of aluminium-fed crayfish was located in sub-cellular fractions thought to be involved in metal detoxification. Aluminium concentrations were also high in the antennal glands of aluminium-fed crayfish suggesting that some of the aluminium lost from the hepatopancreas is excreted. Aluminium exposure via contaminated food caused inflammation in the hepatopancreas but did not affect the number of circulating haemocytes, haemolymph ion concentrations or protein levels. In conclusion, crayfish accumulate, store and excrete aluminium from contaminated food with only localised toxicity.

  9. Bioaccumulation of Aluminium in Hydromacrophytes in Polish Coastal Lakes

    Directory of Open Access Journals (Sweden)

    Senze Magdalena

    2015-03-01

    Full Text Available The research on aluminium content was conducted in water and on aquatic flora of Polish lakes in the central part of the coast. The study included the lakes Sarbsko, Choczewskie, Bia.e, K.odno, D.brze and Salino investigated in the summer of 2013. The examined lakes belong mainly to the direct basin of the Baltic Sea. Samples of aquatic plants and lake waters were collected. In the water samples pH and electrolytic conductivity were measured. The aluminium content was determined both in water and aquatic plants. Submerged hydromacrophyte studies included Myriophyllum alterniflorum L., Potamogeton perfoliatus L. and Ceratophyllum demersum L. Emergent hydromacrophyte studies included Phragmites australis (Cav. Trin. ex Steud., Juncus bulbosus L., Iris pseudacorus L., Eleocharis palustris (L. Roem. % Schult., Phalaris arundinacea L., Carex riparia Curt., Mentha aquatic L., Stratiotes aloides L., Alisma plantago-aquatica L., Glyceria maxima (Hartman Holmb., Sagittaria sagittifolia L., Scirpus lacustris L. and Typha angustifolia L. The purpose of this investigation was the determination of the aluminium content in submerged and emergent hydromacrophytes and also the definition of their bioaccumulative abilities. The average concentration of aluminium in water was 2.68 fęg Al dm.3. The average content of aluminium in plants was 2.8015 mg Al kg.1. The bioaccumulation factor ranged from BCF=19.74 to BCF=16619. On the basis of the analysis of the aluminium content in water and aquatic plants results show that both water and plants were characterized by a moderate level of aluminium. The recorded concentrations indicate a mid-range value and are much lower than those which are quoted for a variety of surface waters in various parts of the world.

  10. Effect of Indium on the Superconducting Transition Temperature of Tin Telluride

    Science.gov (United States)

    Zhong, Ruidan; Schneeloch, John; Shi, Xiaoya; Li, Qiang; Tranquada, John; Gu, Genda

    2013-03-01

    Indium-doped tin telluride is one of the most appealing topological superconductors. We have grown a series of Sn1-xInxTe crystals with different indium concentrations (0.1 <=x <=1.0). The results show indium doping improves the superconducting transition temperature significantly and is highly related to the indium concentration. The maximum Tc of indium-doped tin telluride polycrystalline is 4.5K for x =0.4. Single crystals of Sn1-xInxTe were also grown by the floating zone method, and their magnetic properties were characterized.

  11. Acute aluminium phosphide poisoning, what is new?

    Directory of Open Access Journals (Sweden)

    Yatendra Singh

    2014-01-01

    Full Text Available Aluminium phosphide (AlP is a cheap solid fumigant and a highly toxic pesticide that is commonly used for grain preservation. AlP has currently generated interest with increasing number of cases in the past four decades because of its increased use for agricultural and nonagricultural purposes, and also its easy availability in the markets has led to its increased misuse to commit suicide. Ingestion is usually suicidal in intent, uncommonly accidental and rarely homicidal. The poison affects all systems, shock, cardiac arrhythmias with varied ECG changes and gastrointestinal features being the most prominent. Diagnosis is made on the basis of clinical suspicion, a positive silver nitrate paper test to phosphine, and gastric aspirate and viscera biochemistry. Treatment includes early gastric lavage with potassium permanganate or a combination of coconut oil and sodium bicarbonate, administration of charcoal and palliative care. Specific therapy includes intravenous magnesium sulphate and oral coconut oil. Unfortunately, the lack of a specific antidote Results in very high mortality and the key to treatment lies in rapid decontamination and institution of resuscitative measures. This article aims to identify the salient features and mechanism of AlP poisoning along with its management strategies and prognostic variables.

  12. Low cost aluminium metal matrix composite

    Energy Technology Data Exchange (ETDEWEB)

    Withers, G.

    2007-03-15

    Low cost, light weight Ultalite{reg_sign} is an Aluminium Metal Matrix Composite (AL-MMC) which utilises wear resistant ceramic particles derived from flyash. Ultalite AL-MMC typically contains between 10 and 30 per cent ceramic particles, and is formulated for the manufacture of wear resistant automotive components. Due to its low density and ease of processing into net shape die casting, Ultalite AL-MMC provides weight savings of up to 60 per cent over components fabricated from cast iron, thereby providing improved fuel efficiency with reduced greenhouse emissions. The original flyash material was sourced from a black coal power station in Queensland, where it contained a wide range of particles sizes. To narrow the size range and to remove impurities, a proprietary pretreatment developed by Dr Thomas Robl and co-researchers at the University of Kentucky was employed. The University of Kentucky developed the technology for the classification and benefaction of flyash to produce high-grade Pozzolan, which is used in Portland Cement product. This technology is now being applied to the production of Ultalite AL-MMC. Testing performed by Dr Robl has shown that the proprietary technology can eliminate the hollow particles, extract detrimental carbon-based impurities and remove the extremely fine and coarse particles. All that remains are dense ceramic particles with an average particle size of approximately 30 {mu}m. 9 refs., 3 figs.

  13. Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate.

    Science.gov (United States)

    Ghazali, Norizzawati Mohd; Yasui, Kanji; Hashim, Abdul Manaf

    2014-01-01

    Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm(2) using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si.

  14. PHASE CONVERSIONS IN METAL-OXIDE COMPOSITIONS ON THE BASIS OF ALUMINIUM AND SILICON OXIDE

    OpenAIRE

    2010-01-01

    The regularities of phase conversions in metal-oxide compositions on the basis of aluminium and silicon oxide with the purpose of silumins synthesis by means of direct restoration of aluminium silicon are studied.

  15. The General Situation of the Scale and Layout of Aluminium Industry in China

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    <正>Since 2002, aluminium industry has become a key industry under the macro control of the country, for which the reason is the aluminium industry in China has seen "repeated construc-tion", "blind investment", "excessive capacity",

  16. Aluminium Matrix Composites Reinforced with Co-continuous Interlaced Phases Aluminium-alumina Needles

    Directory of Open Access Journals (Sweden)

    Elvio de Napole Gregolin

    2002-09-01

    Full Text Available An Al-5SiO2 (5 wt% of SiO2 aluminium matrix fiber composite was produced where the reinforcement consists of fossil silica fibers needles. After being heat-treated at 600 °C, the original fiber morphology was retained but its microstructure changed from solid silica to an interconnected (Al-Si/Al2O3 interlaced structure named co-continuous composite. A technique of powder metallurgy, using commercial aluminium powder and the silica fibers as starting materials, followed by hot extrusion, was used to produce the composite. The co-continuous microstructure was obtained partially or totally on the fibers as a result of the reaction, which occurs during the heat treatment, first by solid diffusion and finally by the liquid Al-Si in local equilibrium, formed with the silicon released by reaction. The internal structure of the fibers was characterized using field emission electron microscope (FEG-SEM and optical microscopy on polished and fractured samples.

  17. Impact properties of aluminium - glass fiber reinforced plastics sandwich panels

    Directory of Open Access Journals (Sweden)

    Mathivanan Periasamy

    2012-06-01

    Full Text Available Aluminium - glass fiber reinforced plastics (GFRP sandwich panels are hybrid laminates consisting of GFRP bonded with thin aluminum sheets on either side. Such sandwich materials are increasingly used in airplane and automobile structures. Laminates with varying aluminium thickness fractions, fiber volume fractions and orientation in the layers of GFRP were fabricated by hand lay up method and evaluated for their impact performance by conducting drop weight tests under low velocity impacts. The impact energy required for initiating a crack in the outer aluminium layer as well as the energy required for perforation was recorded. The impact load-time history was also recorded to understand the failure behavior. The damage depth and the damage area were measured to evaluate the impact resistance. Optical photography and scanning electron micrographs were taken to visualize the crack and the damage zone. The bidirectional cross-ply hybrid laminate (CPHL has been found to exhibit better impact performance and damage resistance than the unidirectional hybrid laminate (UDHL. Increase in aluminium thickness fraction (Al tf and fiber volume fraction (Vf resulted in an increase in the impact energy required for cracking and perforation. On an overall basis, the sandwich panels exhibited better impact performance than the monolithic aluminium.

  18. Elevated urinary excretion of aluminium and iron in multiple sclerosis.

    Science.gov (United States)

    Exley, Christopher; Mamutse, Godwin; Korchazhkina, Olga; Pye, Eleanor; Strekopytov, Stanislav; Polwart, Anthony; Hawkins, Clive

    2006-10-01

    Multiple sclerosis (MS) is a chronic, immune-mediated, demyelinating disease of the central nervous system of as yet unknown aetiology. A consensus of opinion has suggested that the disorder is the result of an interplay between environmental factors and susceptibility genes. We have used a battery of analytical techniques to determine if the urinary excretion of i) markers of oxidative damage; ii) iron and iii) the environmental toxin aluminium and its antagonist, silicon, are altered in relapsing-remitting (RRMS) and secondary progressive MS (SPMS). Urinary concentrations of oxidative biomarkers, MDA and TBARS, were not found to be useful indicators of inflammatory disease in MS. However, urinary concentrations of another potential marker for inflammation and oxidative stress, iron, were significantly increased in SPMS (P0.05). Urinary concentrations of aluminium were also significantly increased in RRMS (Paluminium excretion in the former were similar to those observed in individuals undergoing metal chelation therapy. The excretion of silicon was lower in MS and significantly so in SPMS (Paluminium excretion similar to those seen in aluminium intoxication suggested that aluminium may be a hitherto unrecognized environmental factor associated with the aetiology of MS. If aluminium is involved in MS then an increased dietary intake of its natural antagonist, silicon, might be a therapeutic option.

  19. Cutaneous gallium uptake in patients with AIDS with mycobacterium avium-intracellulare septicemia

    Energy Technology Data Exchange (ETDEWEB)

    Allwright, S.J.; Chapman, P.R.; Antico, V.F.; Gruenewald, S.M.

    1988-07-01

    Gallium imaging is increasingly being used for the early detection of complications in patients with AIDS. A 26-year-old homosexual man who was HIV antibody positive underwent gallium imaging for investigation of possible Pneumocystis carinii pneumonia. Widespread cutaneous focal uptake was seen, which was subsequently shown to be due to mycobacterium avium-intracellulare (MAI) septicemia. This case demonstrates the importance of whole body imaging rather than imaging target areas only, the utility of gallium imaging in aiding the early detection of clinically unsuspected disease, and shows a new pattern of gallium uptake in disseminated MAI infection.

  20. Nanosecond dynamics of a gallium mirror's light-induced reflectivity change

    CERN Document Server

    Albanis, V; Emelyanov, V I; Fedotov, V A; MacDonald, K F; Petropoulos, P M; Richardson, D J; Zheludev, N I

    2000-01-01

    Transient pump-probe optical reflectivity measurements of the nano/microsecond dynamics of a fully reversible, light-induced, surface-assisted metallization of gallium interfaced with silica are reported. The metallization leads to a considerable increase in the interface's reflectivity when solid a-gallium is on the verge of melting. The reflectivity change was found to be a cumulative effect that grows with light intensity and pulse duration. The reflectivity relaxes back to that of alpha-gallium when the excitation is withdrawn in a time that increases critically at gallium's melting point. The effect is attributed to a non-thermal light-induced structural phase transition.