WorldWideScience

Sample records for aluminium gallium indium

  1. Synthesis and physicochemical study of aluminium, gallium, indium complexes with dimethylsulfoxide

    International Nuclear Information System (INIS)

    Coordination compounds of aluminium, gallium, indium (M) with dimethylsulfoxide (DMSO) of (M(DMSO)6)(Cr(SCN)6) composition are synthesized. The substances obtained are characterized by methods of chemical, differential thermal, X-ray phase analysis and IR spectroscopy. Density, magnetic susceptibility and electric conductivity of complex solutions are determined

  2. Chemico-analytical properties and extraction of aluminium gallium and indium complexes with glycine cresol red

    International Nuclear Information System (INIS)

    It is established that glycine cresol red (GCR) forms coloured complexes with Al3+, Ga3+ and In3+ ions in aqueous solutions. The optimum conditions of their formation and their composition are determined. Introduction of acetate-ions into solution hampers the formation of coloured compounds of In and Al. High selectivity of CCR action is achieved during the extraction of complexes with chloroform solution of α-bromobutyric acid. The optimum conditions of extraction are studied, the composition and extraction constant of gallium complex with GCR and α-bromobutyric acid are determined

  3. Formazanido complexes of heavier group 13 elements aluminium, gallium, and indium.

    Science.gov (United States)

    Schorn, W; Grosse-Hagenbrock, D; Oelkers, B; Sundermeyer, J

    2016-01-21

    The preparation, molecular structures and physical properties of novel heavy group 13 metal formazanido complexes are described. The trimethyl derivatives MMe3 (M = Al, Ga, In) react with 1,3,5-triphenylformazan (Htpf) in a 1 : 1 ratio to give methane and metallacycles of the type [M(tpf)Me2]. While [Al(tpf)Me2] and [Ga(tpf)Me2] are mononuclear compounds with six-membered rings and coordination number 4 in solution and in the crystalline state, indium derivative [In(tpf)Me2] forms oligomers in non-coordinating solvents according to NMR studies, these are probably N-bridged dimers with coordination number 5 at indium. The oligomer is cleaved by addition of one equivalent of pyridine or 4-dimethylaminopyridine (DMAP). The complexes [M(tpf)Me2] (M = Al, Ga) and [In(tpf)Me2(DMAP)] are characterized by XRD analyses. They are unique examples of main group metal formazane ring systems of the third and higher periods. The UV-Vis solution spectra of the neutral ligand Htpf and its metallated compounds [M(tpf)Me2] (M = Al, Ga, In) are discussed. PMID:26658885

  4. Growth and characterization of indium antimonide and gallium antimonide crystals

    Indian Academy of Sciences (India)

    N K Udayashankar; H L Bhat

    2001-10-01

    Indium antimonide and gallium antimonide were synthesized from the respective component elements using an indigenously fabricated synthesis unit. Bulk crystals of indium antimonide and gallium antimonide were grown using both the vertical and horizontal Bridgman techniques. Effect of ampoule shapes and diameters on the crystallinity and homogeneity was studied. The grown crystals were characterized using X-ray analysis, EDAX, chemical etching, Hall effect and conductivity measurements. In the case of gallium antimonide, effect of dopants (Te and In) on transport and photoluminescence properties was investigated.

  5. Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

    Science.gov (United States)

    Jain, Raj K.

    2005-01-01

    Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

  6. Preparation of radiopharmaceuticals labeled with gallium and indium

    International Nuclear Information System (INIS)

    This project was designed to carry out routine production of Ga-68 labeled radiopharmaceuticals for use, particularly in pulmonary studies; to continue work on the development of Ga-68 labeled radiopharmaceuticals that could be used with positron emission tomography; to evaluate indium-111 and possibly gallium-68 labeled antibodies in animal models; to continue development of new chelates and bifunctional chelates for use as radiopharmaceuticals; and to develop new approaches to the delivery of radiopharmaceuticals to the brain. We have made major advances in all of these areas. In area one, we have shown that gallium-68 radiopharmaceuticals can be produced routinely under robotic control for patient studies. This has resulted in several publications by us and by our collaborators in the Pulmonary Division at Washington University. In the second area, we have continued to study gallium-68 labeled radiopharmaceuticals and have carried out the work to allow gallium-68 labeled macroaggregated albumin to be administered to patients. This was necessary due to the fact that our previous gallium-68 particulate tracer, gallium-68 labeled microspheres could not be prepared due to the fact that the microsphere kit from 3M was removed from the market. In the area of labeled antibodies we have studied indium-111 labeled antibodies in two animal models and compared gallium-68 labeled antibodies with indium and iodine antibodies in one of these models. It appears that gallium-68 labeled antibody fragments may have promise as radiopharmaceuticals

  7. Removal of sulfate interference in the determination of indium and gallium by graphite furnace AAS

    International Nuclear Information System (INIS)

    A mixture of ammonium-EDTA, nickel and aluminium nitrates is suitable as a matrix modifier for the removal of sulfate interference in the determination of indium and gallium by graphite furnace AAS. Nickel and aluminium nitrates act as a thermal stabilizer for the analyte in the furnace before atomization. Since analyte and other cations are masked by EDTA, the coexisting sulfates are converted to ammonium salt, which is readily decomposed and eliminated from the furnace during the ashing step. In the presence of 0.1 M nickel nitrate, 0.001 M aluminium nitrate and 0.1 M ammonium-EDTA, when the concentration of sodium and potassium sulfates are below 0.02 M, the interferences of these sulfates are completely removed. (author)

  8. On extraction mechanism of gallium amd indium by thenoyltrifluoroacetone

    International Nuclear Information System (INIS)

    Extraction of gallium and indium microamounts (10-6 mol./l) by thenoyltrifluoroacetone in benzol is studied. Extraction is performed from 1N NaClO4 solution. Optimum extraction conditions are found, the composition is determined and stability constants of metal complexes with extracting agent are calculated

  9. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    Science.gov (United States)

    Curtis, Calvin J.; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S.; Nekuda, Jennifer A.

    2011-11-15

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  10. Effect of oxidation on the Mechanical Properties of Liquid Gallium and Eutectic Gallium-Indium

    OpenAIRE

    Xu, Qin; Qudalov, Nikolai; Guo, Qiti; Jaeger, Heinrich; Brown, Eric

    2012-01-01

    Liquid metals exhibit remarkable mechanical properties, in particular large surface tension and low viscosity. However, these properties are greatly affected by oxidation when exposed to air. We measure the viscosity, surface tension, and contact angle of gallium (Ga) and a eutectic gallium-indium alloy (eGaIn) while controlling such oxidation by surrounding the metal with an acid bath of variable concentration. Rheometry measurements reveal a yield stress directly attributable to an oxide sk...

  11. Small lead and indium inclusions in aluminium

    International Nuclear Information System (INIS)

    This paper reports implantation of lead or indium into aluminum results in spontaneous phase separation and formation of lead or indium precipitates. The precipitates grow in topotactical alignment with the matrix, giving TEM images characterized by moire fringes. The size and density of the precipitates increase with increasing fluence until coalescence begins to occur. Implantation at elevated temperatures lead to formation of large precipitates with well developed facets. This is particularly significant for implantation above the bulk melting point of the implanted species. Melting and solidification have been followed by in-situ TEM heating and cooling experiments. Superheating up to ∼50 K above the bulk melting point has been observed, and the largest inclusions melt first. Melting is associated with only partial loss of facetting of the largest inclusion. Initial growth of the inclusions occurs by trapping of atoms retained in supersaturated solution. Further growth occurs by coalescence of neighboring inclusion in the liquid phase. Solidification is accompanied by a strong undercooling ∼30 K below the bulk melting point, where the smallest inclusions solidify first. Solidification is characterized by spontaneous restoration of the facets and the topotactical alignment

  12. Effect of oxidation on the Mechanical Properties of Liquid Gallium and Eutectic Gallium-Indium

    CERN Document Server

    Xu, Qin; Guo, Qiti; Jaeger, Heinrich; Brown, Eric

    2012-01-01

    Liquid metals exhibit remarkable mechanical properties, in particular large surface tension and low viscosity. However, these properties are greatly affected by oxidation when exposed to air. We measure the viscosity, surface tension, and contact angle of gallium (Ga) and a eutectic gallium-indium alloy (eGaIn) while controlling such oxidation by surrounding the metal with an acid bath of variable concentration. Rheometry measurements reveal a yield stress directly attributable to an oxide skin that obscures the intrinsic behavior of the liquid metals. We demonstrate how the intrinsic viscosity can be obtained with precision through a scaling technique that collapses low- and high-Reynolds number data. Measuring surface tension with a pendant drop method, we show that the oxide skin generates a surface stress that mimics surface tension and develop a simple model to relate this to the yield stress obtained from rheometry. We find that yield stress, surface tension, and contact angle all transition from solid-...

  13. Regularities in aluminium and indium chemisorption on chelating polymeric sorbents

    International Nuclear Information System (INIS)

    Complexation properties of synthesized polymer chelate sorbents: substituted of polystyrene-azo-pyrocatechol are investigated and correlations between pK'OH of functional groups of sorbents as well as pH50 values of chelation and constants of stability (lgKstab) are established for studying regularities of effect of structure and acid-base properties of functional groups of sorbents on the parameters of Al3+ and In3+ chemical sorption. Established correlations make it possible to predict the physicochemical parameters of sorbents and sorption of metal ions with the aim of separation and concentration of aluminium and indium micro account from the objects of different origin

  14. Quantitative analysis of indium-gallium alloys on the base of conductometric measurements

    International Nuclear Information System (INIS)

    We have developed a conductimetric apparatus for measuring the composition of indium-gallium alloys, and we have established the standard calibrations of electrical conductivity needed to determine the solubility of gallium in solid indium. The practical limitations to the attainable precision are discussed, and it is shown that the method can be used to study the phase diagrams and the physicochemical properties of systems of this type

  15. Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

    Science.gov (United States)

    Kim, Jun Ho; Kim, Da-Som; Kim, Sun-Kyung; Yoo, Young-Zo; Lee, Jeong Hwan; Kim, Sang-Woo; Seong, Tae-Yeon

    2016-05-01

    In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm-3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke's figure of merit (FOM) was calculated to be 1.94 × 10-3 for the ITO film and 45.02 × 10-3 Ω-1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

  16. Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

    Science.gov (United States)

    Kim, Jun Ho; Kim, Da-Som; Kim, Sun-Kyung; Yoo, Young-Zo; Lee, Jeong Hwan; Kim, Sang-Woo; Seong, Tae-Yeon

    2016-08-01

    In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm-3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke's figure of merit (FOM) was calculated to be 1.94 × 10-3 for the ITO film and 45.02 × 10-3 Ω-1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

  17. Low-threshold indium gallium nitride quantum dot microcavity lasers

    Science.gov (United States)

    Woolf, Alexander J.

    Gallium nitride (GaN) microcavities with embedded optical emitters have long been sought after as visible light sources as well as platforms for cavity quantum electrodynamics (cavity QED) experiments. Specifically, materials containing indium gallium nitride (InGaN) quantum dots (QDs) offer an outstanding platform to study light matter interactions and realize practical devices, such as on-chip light emitting diodes and nanolasers. Inherent advantages of nitride-based microcavities include low surface recombination velocities, enhanced room-temperature performance (due to their high exciton binding energy, as high as 67 meV for InGaN QDs), and emission wavelengths in the blue region of the visible spectrum. In spite of these advantages, several challenges must be overcome in order to capitalize on the potential of this material system. Such diffculties include the processing of GaN into high-quality devices due to the chemical inertness of the material, low material quality as a result of strain-induced defects, reduced carrier recombination effciencies due to internal fields, and a lack of characterization of the InGaN QDs themselves due to the diffculty of their growth and therefore lack of development relative to other semiconductor QDs. In this thesis we seek to understand and address such issues by investigating the interaction of light coupled to InGaN QDs via a GaN microcavity resonator. Such coupling led us to the demonstration of the first InGaN QD microcavity laser, whose performance offers insights into the properties and current limitations of the nitride materials and their emitters. This work is organized into three main sections. Part I outlines the key advantages and challenges regarding indium gallium nitride (InGaN) emitters embedded within gallium nitride (GaN) optical microcavities. Previous work is also discussed which establishes context for the work presented here. Part II includes the fundamentals related to laser operation, including the

  18. Deep subgap feature in amorphous indium gallium zinc oxide: Evidence against reduced indium

    International Nuclear Information System (INIS)

    Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. Despite the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. Here, we present evidence against In+ lone pair active electrons as the origin of the deep subgap features. No In+ species are observed, only In0 nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Deep subgap feature in amorphous indium gallium zinc oxide: Evidence against reduced indium

    Energy Technology Data Exchange (ETDEWEB)

    Sallis, Shawn; Williams, Deborah S. [Materials Science and Engineering, Binghamton University, Binghamton, New York, 13902 (United States); Quackenbush, Nicholas F.; Senger, Mikell [Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York, 13902 (United States); Woicik, Joseph C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland, 20899 (United States); White, Bruce E.; Piper, Louis F.J. [Materials Science and Engineering, Binghamton University, Binghamton, New York, 13902 (United States); Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York, 13902 (United States)

    2015-07-15

    Amorphous indium gallium zinc oxide (a-IGZO) is the archetypal transparent amorphous oxide semiconductor. Despite the gains made with a-IGZO over amorphous silicon in the last decade, the presence of deep subgap states in a-IGZO active layers facilitate instabilities in thin film transistor properties under negative bias illumination stress. Several candidates could contribute to the formation of states within the band gap. Here, we present evidence against In{sup +} lone pair active electrons as the origin of the deep subgap features. No In{sup +} species are observed, only In{sup 0} nano-crystallites under certain oxygen deficient growth conditions. Our results further support under coordinated oxygen as the source of the deep subgap states. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Using Gallium as a tracer for aluminium toxicity in plants

    International Nuclear Information System (INIS)

    Full text: Aluminium (Al) is the most common metal in the earth's crust and is highly toxic to the roots or plants when present in the solution as monomeric cations (e.g.: Al 3+ and AlOH 2+) in acid soils. Despite this long known effect there is little consensus on the physiological basis of Al toxicity, which may manifest either externally or within the symplasm. One of the major factors that has retarded progress in understanding Al toxicity in plants is the lack of a convenient radioisotope for Al. We have studied the problem of AI toxicity in yeast (Saccharomyces cerevisiae), because yeast and higher plants share similar membrane transport mechanisms. We have shown that Al and Gallium (Ga) (chemically similar element to Al) has similar toxic effect on the yeast cells and that Ga3+ and Al3+ exhibit competitive inhibition. We have estimated the concentration of Al and Ga inside the yeast cells. We have tested the feasibility of using 67Ga radioisotope as a tracer for Al transport with the view of using it to investigate the mechanism of Al uptake and toxicity in plants

  1. Electrodeposition of gallium and zinc onto aluminium. Influence of the electrodeposited metals on the activation process

    International Nuclear Information System (INIS)

    The electrodeposition of gallium and/or zinc on aluminium, aluminium-zinc alloy and vitreous carbon electrodes in chloride solutions is analysed. The electrodissolution of the formed interfaces is also described and discussed. For this purpose, potentiodynamic and potentiostatic techniques and open circuit potential measurements were employed and surface characterisation was performed by scanning electron microscopy and energy dispersive X-ray analysis. The presence of zinc, electrodeposited from the solution or as an alloying component, facilitates gallium enrichment at the interface and improves the wetting on the aluminium oxide. These conditions ensure the formation of a surface Ga-Al amalgam. As a result, the dissolution process occurs at potentials which are more active than those observed for aluminium or aluminium-zinc alloy in halide solutions

  2. Long wavelength gallium indium nitrogen arsenide and gallium-indium-nitrogen-arsenic-antimony lasers on gallium arsenide

    Science.gov (United States)

    Ha, Wonill

    The boom in fiber optic communications has created a high demand for much lower cost lasers in the 1.3--1.6 mum wavelength range for both low cost vertical-cavity surface-emitting lasers (VCSELs) and high-power Raman pumps. This has led to the introduction of dilute nitrogen into GaInAs to reduce the bandgap sufficiently, resulting in a new long wavelength material grown on GaAs. This new material will provide a new platform for low cost and high-speed directly-modulated lasers that are essential for the rapid expansion of optical wide area networks, metro area networks, and local area networks. The requirements for these lasers are a broad operating temperature range (-10 to 90°C) and moderate output power (˜10 mW) in the fundamental mode. There is also a growing interest in higher power lasers, at similar wavelengths, as pumps for Raman amplifiers to expand the available bandwidth and increase power budgets. Research has shown that GaInNAs can be coherently lattice matched to GaAs while providing the proper bandgap energy. These GaAs-based lasers with dilute N can take advantage of the well-developed GaAs processing techniques and superior distributed Bragg reflector mirror technology for VCSELs. This thesis presents new structures utilizing GaNAs barriers and a new quantum well material, GaInNAsSb, to achieve long-wavelength optical emission in post-annealed material. This increase is accompanied by a blue-shift in the bandgap energy. As a result, the distinct challenge of this material system is to achieve high quality material with sufficiently long wavelength emission. Introduction of nitrogen into the barriers reduces the blue-shift of luminescence by suppressing nitrogen out-diffusion from the quantum wells and decreasing carrier confinement in the quantum wells. We utilize antimony, both incorporated into the crystal and used as a surfactant, to enable higher indium incorporation. GaNAs or GaNAsSb barriers also reduce the overall strain of the active

  3. Molecular beam epitaxy growth of indium nitride and indium gallium nitride materials for photovoltaic applications

    Science.gov (United States)

    Trybus, Elaissa

    The objective of the proposed research is to establish the technology for material growth by molecular beam epitaxy (MBE) and fabrication of indium gallium nitride/gallium nitride (InxGa1-xN/GaN) heterojunction solar cells. InxGa1-xN solar cells have the potential to span 90% of the solar spectrum, however there has been no success with high indium (In) incorporation and only limited success with low In incorporation InxGa1-xN. Therefore, this present work focuses on 15--30% In incorporation leading to a bandgap value of 2.3--2.8 eV. This work will exploit the revision of the indium nitride (InN) bandgap value of 0.68 eV, which expands the range of the optical emission of nitride-based devices from ultraviolet to near infrared regions, by developing transparent In xGa1-xN solar cells outside the visible spectrum. Photovoltaic devices with a bandgap greater than 2.0 eV are attractive because over half the available power in the solar spectrum is above the photon energy of 2.0 eV. The ability of InxGa1-xN materials to optimally span the solar spectrum offers a tantalizing solution for high-efficiency photovoltaics. This work presents results confirming the revised bandgap of InN grown on germanium (Ge) substrates and the effects of oxygen contamination on the bandgap. This research adds to the historical discussion of the bandgap value of InN. Using the metal modulated epitaxy (MME) technique in a new, ultra-clean refurbished MBE system, an innovative growth regime is established where In and Ga phase separation is diminished by increasing the growth rate for In xGa1-xN. The MME technique modulates the metal shutters with a fixed duty cycle while maintaining a constant nitrogen flux and proves effective for improving crystal quality and p-type doping. InxGa 1-xN/GaN heterojunction solar cells require p-type doping to create the p-n subcell collecting junction, which facilitates current collection through the electrostatic field created by spatially separated ionized

  4. Gallium(III) and indium(III) dithiolate complexes: Versatile precursors for metal sulfides

    Indian Academy of Sciences (India)

    Shamik Ghoshal; Vimal K Jain

    2007-11-01

    The chemistry of classical and organometallic complexes of gallium and indium with dithiolate ligands, i.e., dithiocarboxylates, xanthates, dithiocarbamates, dithiophosphates, dithiophophinates and dithioarsenates, has been reviewed. Synthesis, spectroscopic and structural aspects of these complexes are described. Their emerging role as single source molecular precursors for the preparation of metal sulfide thin films and nano-particles has been discussed.

  5. Analysis on the Performance of Copper Indium Gallium Selenide (CIGS Based Photovoltaic Thermal

    Directory of Open Access Journals (Sweden)

    Zulkepli Afzam

    2016-01-01

    Full Text Available This paper deals with the efficiency improvement of Copper Indium Gallium Selenide (CIGS Photovoltaic (PV and also solar thermal collector. Photovoltaic thermal (PV/T can improve overall efficiency for PV and also solve the problem of limited roof space at urban area. Objective of this study is to clarify the effect of mass flow rate on the efficiency of the PV/T system. A CIGS solar cell is used with rated output power 65 W and 1.18 m2 of area. 4 set of experiments were carried out, which were: thermal collector with 0.12 kg/s flow rate, PV/T with 0.12 kg/s flow rate, PV/T with 0.09 kg/s flow rate and PV. It was found that PV/T with 0.12 kg/s flow rate had the highest electrical efficiency, 2.92 %. PV/T with 0.09 kg/s flow rate had the lowest electrical efficiency, 2.68 %. It also had 2 % higher overall efficiency. The efficiency gained is low due to several factors. The rated output power of the PV is low for the area of 1.18 m2. The packing factor of the PV also need to be considered as it may not be operated at the optimal packing factor. Furthermore, aluminium sheet of the PV may affect the PV temperature due to high thermal conductivity. Further study on more values of mass flow rate and also other parameters that affect the efficiency of the PV/T is necessary.

  6. Effect of heat treatment on anodic activation of aluminium by trace element indium

    Energy Technology Data Exchange (ETDEWEB)

    Graver, Brit [Department of Materials Science and Engineering, Norwegian University of Science and Technology, N-7491 Trondheim (Norway); Helvoort, Antonius T.J. van [Department of Physics, Norwegian University of Science and Technology, N-7491 Trondheim (Norway); Nisancioglu, Kemal, E-mail: kemal.nisancioglu@material.ntnu.n [Department of Materials Science and Engineering, Norwegian University of Science and Technology, N-7491 Trondheim (Norway)

    2010-11-15

    Research highlights: {yields} Indium segregation activates AlIn alloy surface anodically in chloride solution. {yields} Enrichment of In on Al surface can occur thermally by heat treatment at 300 {sup o}C. {yields} Increasing temperature homogenises indium in aluminium reducing anodic activation. {yields} Indium can activate AlIn surface by segregating through dealloying of aluminium. {yields} Anodic activation is caused by AlIn amalgam formation at aluminium surface. - Abstract: The presence of trace elements in Group IIIA-VA is known to activate aluminium anodically in chloride environment. The purpose of this paper is to investigate the surface segregation of trace element In by heat treatment and resulting surface activation. Model binary AlIn alloys, containing 20 and 1000 ppm by weight of In, were characterized after heat treatment at various temperatures by use of glow discharge optical emission spectroscopy, electron microscopy and electrochemical polarization. Heat treatment for 1 h at 300 {sup o}C gave significant segregation of discrete In particles (thermal segregation), which activated the surface. Indium in solid solution with aluminium, obtained by 1 h heat treatment at 600 {sup o}C, also activated by surface segregation of In on alloy containing 1000 ppm In, resulting from the selective dissolution of the aluminium component during anodic oxidation (anodic segregation). The effect of anodic segregation was reduced by decreasing indium concentration in solid solution; it had negligible effect at the 20 ppm level. The segregated particles were thought to form a liquid phase alloy with aluminium during anodic polarization, which in turn, together with the chloride in the solution destabilized the oxide.

  7. Effect of refractory metal diselenides coatings structure on tribodiffusion of gallium and indium

    International Nuclear Information System (INIS)

    Mechanism of gallium and indium saturation of coatings of tungsten, molybdenum and niobium diselenides at their treatment in Ga-In system cavitating eutectic melt is investigated. It is defined, that the main factor, which determines mass transfer of gallium and indium under the effect of ultrasound, is the formation of defect structure by dislocation mechanism for WSe2 and MoSe2 compounds with stoichiometric composition. Coating texture affects the direction of mass transfer by intergranular boundaries. Using NbSe2 coating as an example it is shown, that deviation of compound composition from stoichiometry results in variation of diffusion mechanism: high amount of grain structure defects promotes realization of mass transfer by both their boundaries and volume. Role of coating texture in this case is unessential

  8. Determination of lattice orientation in aluminium alloy grains by low energy gallium ion-channelling

    International Nuclear Information System (INIS)

    Polished sections of a fine-grained aluminium, silicon carbide metal matrix composite (MMC) alloy were prepared by sputtering using a low energy gallium ion source and column (FIB). The MMC had been processed by high temperature extrusion. Images of the polished surface were recorded using the ion-induced secondary electron emission. The metal matrix grains were distinguished by gallium ion-channelling contrast from the silicon carbide component. The variation of the contrast from the aluminium grains with tilt angle can be recorded and used to determine lattice orientation with the contrast from the silicon carbide (SiC) component as a reference. This method is rapid and suits site-specific investigations where classical methods of sample preparation fail.

  9. Determination of lattice orientation in aluminium alloy grains by low energy gallium ion-channelling

    Energy Technology Data Exchange (ETDEWEB)

    Silk, Jonathan R. [Aerospace Metal Composites Ltd., RAE Road, Farnborough, GU14 6XE (United Kingdom); Dashwood, Richard J. [WMG, University of Warwick, Coventry, CV4 7AL (United Kingdom); Chater, Richard J., E-mail: r.chater@imperial.ac.u [Department of Materials, Imperial College, London SW7 2AZ (United Kingdom)

    2010-06-15

    Polished sections of a fine-grained aluminium, silicon carbide metal matrix composite (MMC) alloy were prepared by sputtering using a low energy gallium ion source and column (FIB). The MMC had been processed by high temperature extrusion. Images of the polished surface were recorded using the ion-induced secondary electron emission. The metal matrix grains were distinguished by gallium ion-channelling contrast from the silicon carbide component. The variation of the contrast from the aluminium grains with tilt angle can be recorded and used to determine lattice orientation with the contrast from the silicon carbide (SiC) component as a reference. This method is rapid and suits site-specific investigations where classical methods of sample preparation fail.

  10. Thermodynamic properties of uranium in liquid gallium, indium and their alloys

    International Nuclear Information System (INIS)

    Highlights: • Thermodynamics of uranium is determined in alloys with Ga, In and their mixtures. • In Ga–In alloys decreasing temperature leads to increasing interaction of U with Ga. • Activity coefficients of uranium decrease with increasing gallium content. - Abstract: Activity, activity coefficients and solubility of uranium was determined in gallium, indium and gallium–indium alloys containing 21.8 (eutectic), 40 and 70 wt.% In. Activity was measured at 573–1073 K employing the electromotive force method, and solubility between room temperature (or the alloy melting point) and 1073 K employing direct physical measurements. Activity coefficients were obtained from the difference of experimentally determined temperature dependencies of uranium activity and solubility. Intermetallic compounds formed in the respective alloys were characterized using X-ray diffraction. Partial and excess thermodynamic functions of uranium in the studied alloys were calculated. Liquidus lines in U–Ga and U–In phase diagrams from the side rich in gallium or indium are proposed

  11. Organo-gallium and indium complexes with dithiolate and oxo ligands: Synthesis, structures and applications

    Indian Academy of Sciences (India)

    Vimal K Jain; Amey Wadawale; Nisha P Kushwah; Manoj K Pal

    2011-03-01

    The chemistry of organo-gallium and indium complexes with dithiolate and internally functionalised oxo ligands has been explored. With 1,1-dithiolate ligands both classical and organometallic complexes of gallium and indium, [M(S$^\\cap$S)3], [RM(S$^\\cap$S)2] and [R2M(S$^\\cap$S)] (where R = Me or Et; M = Ga or In; S$^\\cap$S = RCS2, ROCS2, R2NCS2 and (RO)2PS2) have been isolated. Reactions of internally functionalised oxo ligands with R3MR$\\cdot$OEt2 afforded diorganometal complexes [R2ML]. Molecular structures of several of these complexes have been established by single crystal X-ray diffraction analyses. Complexes derived from oxo ligands showed photoluminescence. They have been used as alkylating agents for C-C coupling reactions of aryl bromides in the presence of PdCl2(PPh3)2. Indium dithiolate complexes have been used as molecular precursors for the preparation of mono dispersed ẞ-In2S3 nanoparticles.

  12. Thermodynamics and separation factor of uranium from lanthanum in liquid eutectic gallium-indium alloy/molten salt system

    International Nuclear Information System (INIS)

    Highlights: • The behavior of lanthanum and uranium on liquid gallium-indium eutectic alloy was carried out. The experiments were done in fused 3LiCl-2KCl eutectic vs. Cl−/Cl2 reference electrode at the temperature range 723–823 K. Thermodynamic properties of La-Ga-In and U-Ga-In alloys and the separation factor U/La were calculated. - Abstract: This work presents the electrochemical study of lanthanum and uranium compounds in fused 3LiCl-2KCl eutectic vs. Cl−/Cl2 reference electrode in the temperature range 723–823 K on liquid gallium-indium eutectic alloy. Thermodynamics and the activity coefficients of lanthanum and uranium were studied. The separation factor of uranium from lanthanum on gallium-indium eutectic alloy was determined

  13. Distinctive Signature of Indium Gallium Nitride Quantum Dot Lasing in Microdisks Cavities

    CERN Document Server

    Woolf, Alexander; Aharanovich, Igor; Zhu, Tongtong; Niu, Nan; Wang, Danqing; Oliver, Rachel A; Hu, Evelyn L

    2014-01-01

    Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we utilize the distinctive, high quality (Q~5500) modes of the cavities, and the change in the highest ...

  14. Reactive ion beam etching of aluminum indium antimonide, gallium indium antimonide heterostructures in electron cyclotron resonance methane/hydrogen/nitrogen/silicon tetrachloride discharges at room temperature

    OpenAIRE

    Sendra, J. R.; Anguita, José Virgilio; Pérez Camacho, J. J.; Briones Fernández-Pola, Fernando

    1995-01-01

    Reactive ion beam etching of aluminum indium antimonide, gallium indium antimonide heterostructures in electron cyclotron resonance plasma using methane/hydrogen/nitrogen/silicon tetrachloride (CH4/H2/N2/SiCl4) mixtures has been performed at room temperature. Due to the ratio of chlorine to methane, formation of an indium chloride layer on the etched surface is avoided, thus resulting, in etched surfaces as smooth as the original ones and flat mesa sidewalls. Infrared diodes (2.3µm) have been...

  15. Gallium and Indium: which to use when 2. Nuclear medicine imaging of osteomyelitis

    International Nuclear Information System (INIS)

    Nuclear medicine studies have become increasingly clinically utilized in the diagnostic approach to suspected osteomyelitis. The technetium-99m phosphonate bone scan, with the three- or four-phase modification designed to distinguish between osteomyelitis and cellulitis, the gallium-67 citrate scan, and the indium-111 leukocyte scan. have demonstrated utility in diagnosing acute osteomyelitis or exacerbation of chronic osteomyelitis and monitoring the response to therapy in those patients. Computed tomography and magnetic resonance imaging of suspected osteomyelitis continue to be evaluated, but available data indicate that these modalities play a supporting role to radionuclide studies. 34 refs., 3 figs

  16. Analysis on the Performance of Copper Indium Gallium Selenide (CIGS) Based Photovoltaic Thermal

    OpenAIRE

    Zulkepli Afzam; Yong Lim Wei; Taib Mohd Yusof; Azran Zafri; Basrawi Firdaus

    2016-01-01

    This paper deals with the efficiency improvement of Copper Indium Gallium Selenide (CIGS) Photovoltaic (PV) and also solar thermal collector. Photovoltaic thermal (PV/T) can improve overall efficiency for PV and also solve the problem of limited roof space at urban area. Objective of this study is to clarify the effect of mass flow rate on the efficiency of the PV/T system. A CIGS solar cell is used with rated output power 65 W and 1.18 m2 of area. 4 set of experiments were carried out, which...

  17. Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

    International Nuclear Information System (INIS)

    Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO2 electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO) synaptic transistor. In such synaptic transistors, protons within the SiO2 electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF) behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications

  18. Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Li Qiang, E-mail: guoliqiang@ujs.edu.cn; Ding, Jian Ning; Huang, Yu Kai [Micro/Nano Science & Technology Center, Jiangsu University, Zhenjiang, 212013 (China); Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2015-08-15

    Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO{sub 2} electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO) synaptic transistor. In such synaptic transistors, protons within the SiO{sub 2} electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF) behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications.

  19. Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

    Institute of Scientific and Technical Information of China (English)

    郑艳彬; 李光; 王文龙; 李秀昌; 姜志刚

    2012-01-01

    Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) backplane technology is the best candidate for flat panel displays (FPDs). In this paper, a-IGZO TFT structures are described. The effects of etch parameters (rf power, dc-bias voltage and gas pressure) on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs.

  20. Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

    Directory of Open Access Journals (Sweden)

    Li Qiang Guo

    2015-08-01

    Full Text Available Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO2 electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO synaptic transistor. In such synaptic transistors, protons within the SiO2 electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications.

  1. Thermodynamic properties of lanthanum in gallium-indium eutectic based alloys

    OpenAIRE

    Shchetinskiy, A. V.; Dedyukhin, A. S.; Volkovich, V. A.; Yamshchikov, L. F.; Maisheva, A. I.; Osipenko, A. G.; Kormilitsyn, M. V.

    2013-01-01

    Activity and activity coefficients of lanthanum were determined for the first time in gallium-indium eutectic based alloys in a wide temperature range employing electromotive force method. Activity of β-La and super cooled liquid lanthanum in Ga-In eutectic based alloys between 573 and 1073 K linearly depends on the reciprocal temperature: lgaβ-La(Ga-In)=5.660-15, 352T±0.093 lgaLa(Ga-In)=6.074-15,839T±0.093 Activity coefficients of β-La and super cooled liquid lanthanum in this system at 617-...

  2. Neutron diffraction study at 0.3 K of the magnetic properties of rare-earth aluminium or gallium garnets

    International Nuclear Information System (INIS)

    In order to study ordered magnetic states below 1.5 deg. K by neutron diffraction measurements, a helium-3 cryostat has been realised in which the thermalization of a great quantity of powdered sample is performed by a helium-4 superfluid film, and which leaves the possibility of applying an external magnetic field. We thus studied essentially the magnetic phase transitions of rare-earth aluminium or gallium garnets. First we determined the antiferromagnetic structures of the erbium gallium garnet (TN = 0.79 deg. K) and of the neodymium gallium garnet (TN = 0.516 deg. K). The metamagnetic behavior of the erbium gallium garnet has been observed and compared to that of the dysprosium aluminium garnet. Second we considered the 'non-Kramers' ions Tb3+ and Ho3+ in the aluminium garnets. In this case, only two single ground states (well isolated from upper levels) have to be considered. A molecular field model with purely magnetic dipolar interactions, leads then to the existence of magnetic phase transition with antiferromagnetic ordering. This has been observed for the terbium-aluminium garnet below TN 1.35 deg. K and for the holmium-aluminium garnet below TN ∼ 0.98 deg. K. (author)

  3. Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

    KAUST Repository

    El Afandy, Rami

    2011-07-07

    Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique physical properties of polar indium gallium nitride quantum dots grown by molecular beam epitaxy technique. In this thesis, a theoretical overview of the physical, structural and optical properties of polar III-nitrides quantum dots will be presented. Particular emphasis will be given to properties that distinguish truncated-pyramidal III-nitride quantum dots from other III-V semiconductor based quantum dots. The optical properties of indium gallium nitride quantum dots are mainly dominated by large polarization fields, as well as quantum confinement effects. Hence, the experimental investigations for such quantum dots require performing bandgap calculations taking into account the internal strain fields, polarization fields and confinement effects. The experiments conducted in this investigation involved the transmission electron microscopy and x-ray diffraction as well as photoluminescence spectroscopy. The analysis of the temperature dependence and excitation power dependence of the PL spectra sheds light on the carrier dynamics within the quantum dots, and its underlying wetting layer. A further analysis shows that indium gallium nitride quantum dots through three-dimensional confinements are able to prevent the electronic carriers from getting thermalized into defects which grants III-nitrides quantum dot based light emitting diodes superior thermally induced optical

  4. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    OpenAIRE

    Yu-Hsien Lin; Jay-Chi Chou

    2015-01-01

    We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using different high-k gate dielectric materials such as silicon nitride (Si3N4) and aluminum oxide (Al2O3) at low temperature process (

  5. Thermodynamic investigations on the binary liquid alloys of tellurium with gallium, indium and thallium

    International Nuclear Information System (INIS)

    The thermodynamic properties of liquid tellurium-indium, tellurium-gallium and tellurium-thallium alloys have been investigated using vapour pressure measurements and solution calorimetry. The results obtained showed that the kind of interatomic bonding in the liquid solutions investigated does not differ in its salient features from the nature of the bonding in analogous solid compounds with a strong heteropolar contribution to the binding forces. The shape of the ΔHsup(L)-x-curves in the tellurium-indium and tellurium-thallium systems could be explained with the assumption that the concentration fluctuations in the liquid solutions correspond largely with the atomic arrangements in the solid phases. Analysis of the concentration dependence of the mixing enthalpies using the assumption that the total mixing enthalpy is composed additively of an association part and a statistical atom distribution part gives a maximum mole fraction of the associates of 0.24 (at xsub(Te) = 0.5) in the system indium-tellurium and of 0.25 (at xsub(Te) = 0.4) in the system thallium-tellurium. (orig.)

  6. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    Energy Technology Data Exchange (ETDEWEB)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna [School of Microelectronic Engineering, Universiti Malaysia Perlis, Kampus Pauh Putra, 02600 Arau, Perlis (Malaysia)

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  7. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Seong-Uk [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Product and Test Engineering Team, System LSI Division, Samsung Electronics Co., Ltd, Yongin 446-711 (Korea, Republic of); Jung, Woo-Shik [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Jin-Hong, E-mail: jhpark9@skku.edu [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2014-02-01

    Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  8. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    International Nuclear Information System (INIS)

    Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm2 on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm2 on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs

  9. Indium-doped aluminium oxide as a non-radioactive test aerosol for aerosol experiments

    International Nuclear Information System (INIS)

    For testing inhalation facilities it is advantageous to use a non-radioactive, low toxicity test aerosol which can be detected at low concentrations. These criteria are met by a mechanically generated aerosol of indium-doped alumina. Although some cases of lung fibroses have been associated with the inhalation of aluminium compounds in industry, aluminum oxide aerosols are generally considered to be non-toxic. Indium was chosen as a dopant material because (a) it is not normally present in the lung in detectable amounts, (b) it is chemically similar to aluminum and (c) it can be detected in trace amounts by neutron activation analysis (Friberg et al., 1979). Indium aerosols have the same advantages as radioactive tracers for ease of detection, but they are non-toxic during use. This combination of properties offers advantages that could be of use in a wider range of applications than hitherto used, e.g. in inhalation experiments. This paper describes nose-only inhalation experiments on rats using an aerosol of alumina doped with indium. (author)

  10. Molybdenum Disulfide as a Protection Layer and Catalyst for Gallium Indium Phosphide Solar Water Splitting Photocathodes

    Energy Technology Data Exchange (ETDEWEB)

    Britto, Reuben J.; Benck, Jesse D.; Young, James L.; Hahn, Christopher; Deutsch, Todd G.; Jaramillo, Thomas F.

    2016-06-02

    Gallium indium phosphide (GaInP2) is a semiconductor with promising optical and electronic properties for solar water splitting, but its surface stability is problematic as it undergoes significant chemical and electrochemical corrosion in aqueous electrolytes. Molybdenum disulfide (MoS2) nanomaterials are promising to both protect GaInP2 and to improve catalysis since MoS2 is resistant to corrosion and also possesses high activity for the hydrogen evolution reaction (HER). In this work, we demonstrate that GaInP2 photocathodes coated with thin MoS2 surface protecting layers exhibit excellent activity and stability for solar hydrogen production, with no loss in performance (photocurrent onset potential, fill factor, and light limited current density) after 60 hours of operation. This represents a five-hundred fold increase in stability compared to bare p-GaInP2 samples tested in identical conditions.

  11. Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

    Energy Technology Data Exchange (ETDEWEB)

    Sallis, S.; Williams, D. S. [Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States); Butler, K. T.; Walsh, A. [Center for Sustainable Technologies and Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Quackenbush, N. F. [Department of Physics, Applied Physics, and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Junda, M.; Podraza, N. J. [Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States); Fischer, D. A.; Woicik, J. C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); White, B. E.; Piper, L. F. J., E-mail: lpiper@binghamton.edu [Department of Physics, Applied Physics, and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States)

    2014-06-09

    The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

  12. Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

    International Nuclear Information System (INIS)

    The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

  13. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Xin, Qian; Yan, Linlong; Luo, Yi [School of Physics, Shandong University, Jinan 250100 (China); Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Physics, Shandong University, Jinan 250100 (China); School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2015-03-16

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

  14. Interface location-controlled indium gallium zinc oxide thin-film transistors using a solution process

    Science.gov (United States)

    Na, Jae Won; Kim, Yeong-gyu; Jung, Tae Soo; Tak, Young Jun; Park, Sung Pyo; Park, Jeong Woo; Kim, Si Joon; Kim, Hyun Jae

    2016-03-01

    The role of an interface as an electron-trapping layer in double-stacked indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) was investigated and interface location-controlled (ILC) IGZO TFTs were introduced. In the ILC TFTs, the thickness of the top and bottom IGZO layers is controlled to change the location of the interface layer. The system exhibited improved electrical characteristics as the location of the interface layer moved further from the gate insulator: field-effect mobility increased from 0.36 to 2.17 cm2 V-1 s-1, and the on-current increased from 2.43  ×  10-5 to 1.33  ×  10-4 A. The enhanced electrical characteristics are attributed to the absence of an electron-trapping interface layer in the effective channel layer where electrons are accumulated under positive gate bias voltage.

  15. Reduced contact resistance in inkjet printed high-performance amorphous indium gallium zinc oxide transistors.

    Science.gov (United States)

    Hennek, Jonathan W; Xia, Yu; Everaerts, Ken; Hersam, Mark C; Facchetti, Antonio; Marks, Tobin J

    2012-03-01

    Solution processing of amorphous metal oxide materials to fabricate thin-film transistors (TFTs) has received great recent interest. We demonstrate here an optimized "ink" and printing process for inkjet patterning of amorphous indium gallium zinc oxide (a-IGZO) TFTs and investigate the effects of device structure on derived electron mobility. Bottom-gate top-contact (BGTC) TFTs are fabricated and shown to exhibit electron mobilities comparable to a-Si:H. Furthermore, a record electron mobility of 2.5 cm(2) V(-1) s(-1) is demonstrated for bottom-gate bottom-contact (BGBC) TFTs. The mechanism underlying such impressive performance is investigated using transmission line techniques, and it is shown that the semiconductor-source/drain electrode interface contact resistance is nearly an order of magnitude lower for BGBC transistors versus BGTC devices. PMID:22321212

  16. Optical Spectroscopy of Indium Gallium Arsenide/gallium Arsenide Quantum Wells

    Science.gov (United States)

    Adams, Stephen J. A.

    1992-01-01

    Available from UMI in association with The British Library. In_{rm x}Ga _{rm 1-x}As/GaAs quantum wells have been studied using optical and magneto -optical techniques. Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been used to determine the valence band offset in these heterostructures which was found to vary between 0.4 for wells with indium concentration x = 0.08 to 0.2 for wells with x = 0.21. An interband magneto-luminescence oscillation (IMLO) technique has been applied to the study of undoped 'multi-single' quantum well samples and the theoretically predicted peaked nature of the exciton binding energy as a function of well width has been observed for the first time in any material system. The conduction band effective mass was also determined in the same samples using Optically Detected Cyclotron Resonance (ODCR) and found to be constant over the range of well widths studied at a value close to that of the bulk, with a suitable correction for strain effects. This result was then combined with the IMLO data, fitted to the theory of Akimoto and Hasegawa, to deduce the hole mass as a function of well width, which was found to increase significantly in narrower wells. PL and PLE data was also obtained from modulation doped quantum wells. The PL involving transitions from highly populated subbands was found to be much broader than the PLE data from unpopulated subbands, where the transitions were strongly excitonic. Furthermore the PL linewidth in n-type samples was somewhat greater than that in p-type samples because of the difference in particle effective mass. Comparison of the Fermi energy deduced from PL in n-type samples with Hall and Shubnikov-de Haas measurements suggested an enhancement in the density-of -states over the value in undoped wells. Interesting effects were also observed in the quantum well luminescence arising from an interaction with GaAs deep levels in the barrier layers. A novel method was used to

  17. Effect of microtextured surface topography on the wetting behavior of eutectic gallium-indium alloys.

    Science.gov (United States)

    Kramer, Rebecca K; Boley, J William; Stone, Howard A; Weaver, James C; Wood, Robert J

    2014-01-21

    Liquid-embedded elastomer electronics have recently attracted much attention as key elements of highly deformable and "soft" electromechanical systems. Many of these fluid-elastomer composites utilize liquid metal alloys because of their high conductivities and inherent compliance. Understanding how these alloys interface with surfaces of various composition and texture is critical to the development of parallel processing technology, which is needed to create more complex and low-cost systems. In this work, we explore the wetting behaviors between droplets of gallium-indium alloys and thin metal films, with an emphasis on tin and indium substrates. We find that metallic droplets reactively wet thin metal foils, but the wettability of the foils may be tuned by the surface texture (produced by sputtering). The effects of both composition and texture of the substrate on wetting dynamics are quantified by measuring contact angle and droplet contact diameter as a function of time. Finally, we apply the Cassie-Baxter model to the sputtered and native substrates to gain insight into the behavior of liquid metals and the role of the oxide formation during interfacial processes. PMID:24358994

  18. Correlation of acid-base properties of polymeric chelate sorbents and pH50 of gallium and indium sorption

    International Nuclear Information System (INIS)

    Complexing properties of synthesized polymeric chelate-forming sorbents - substituents of polystyrene-azo-pyrocatechol - are investigated and quantitative correlations between pKOH of functional analytical group and pH50 of chelate formation are determined to investigate regularities of interactions in element - sorbent system. Correlations obtained make it possible to realize special forecast on choice and usage of chelate sorbents for separation and concentrating of gallium and indium microquantities from objects of different nature

  19. Transport of Indium, Gallium and Thallium Metal Ions Through Chromatographic Fiber Supported Solid Membrane in Acetylacetone Containing Mixed Solvents

    Institute of Scientific and Technical Information of China (English)

    Abaji Gaikwad

    2011-01-01

    The transport of metal ions of indium, gallium and thallium from source solution to receiving phase through the chromatographic fiber supported solid membrane in the acetylacetone (HAA) containing mixed solvent system has been explored. The fibers supported solid membranes were prepared with chemical synthesis from cellulose fibers and citric acid with the carboxylic acid ion exchange groups introduced. The experimental variables, such as concentration of metal ions (10^-2 to 10^-4 mol.L^-1) in the source solution, mixed solvent composition [for exampl, e, acetylacetone, (2,4-pentanedione), (HAA) 20% (by volume), 1,4-dioxane 10% to 60% and HC1 0.25 to 2 mol.L^-1] in the receiving phase and stirring speed (50-130 r.min ) of the bulk source and receiving phase, were explored. The efficiency of mixed solvents for the transport of metal ions from the source to receiving phase through the fiber supported solid membrane was evaluated. The combined ion exchange solvent extraction (CIESE) was observed effective for the selective transport of thallium, indium and gallium metal ions through fiber supported solid membrane in mixed solvents. The oxonium salt formation in the receiving phase enhances thallium, indium and gallium metal ion transport through solid membrane phase. The selective transport of thallium metal ions from source phase was observed from indium and gallium metal ions in the presence of hydrochloric acid in organic solvents in receiving phase. The separation of thallium metal ions from the binary mixtures of Be(II), Ti(IV), AI(III) Ca(II), Mg(II), K (I), La(III) and Y(III) was carried out in the mixed solvent system using cellulose fiber supported solid membrane.

  20. Reference Data for the Density and Viscosity of Liquid Cadmium, Cobalt, Gallium, Indium, Mercury, Silicon, Thallium, and Zinc

    Energy Technology Data Exchange (ETDEWEB)

    Assael, Marc J.; Armyra, Ivi J.; Brillo, Juergen; Stankus, Sergei V.; Wu Jiangtao; Wakeham, William A. [Chemical Engineering Department, Aristotle University, 54124 Thessaloniki (Greece); Institut fuer Materialphysik im Weltraum, Deutsches Zentrum fuer Luft- und Raumfahrt, 51170 Koeln (Germany); Kutateladze Institute of Thermophysics, Siberian Brunch of the Russian Academy of Sciences, Lavrentyev ave. 1, 630090 Novosibirsk (Russian Federation); Center of Thermal and Fluid Science, School of Energy and Power Engineering, Xi' an Jiaotong University, Shaanxi 710049 (China); Chemical Engineering Department, Imperial College, London SW7 2BY (United Kingdom)

    2012-09-15

    The available experimental data for the density and viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc have been critically examined with the intention of establishing both a density and a viscosity standard. All experimental data have been categorized into primary and secondary data according to the quality of measurement, the technique employed and the presentation of the data, as specified by a series of criteria. The proposed standard reference correlations for the density of liquid cadmium, cobalt, gallium, indium, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 0.6, 2.1, 0.4, 0.5, 2.2, 0.9, and 0.7, respectively. In the case of mercury, since density reference values already exist, no further work was carried out. The standard reference correlations for the viscosity of liquid cadmium, cobalt, gallium, indium, mercury, silicon, thallium, and zinc are characterized by percent deviations at the 95% confidence level of 9.4, 14.0, 13.5, 2.1, 7.3, 15.7, 5.1, and 9.3, respectively.

  1. Conventional and rapid thermal annealing of spray pyrolyzed copper indium gallium sulfide thin films

    International Nuclear Information System (INIS)

    Highlights: • Spray pyrolysis of copper indium gallium sulfide (CuInGaS2) thin films. • Environmentally friendly method to produce solar cell quality absorber layers. • Effects of post-annealing process on the film properties of CuInGaS2. • Pros-and-cons of conventional and rapid thermal annealing. • Enhanced electrical and optical properties via annealing. - Abstract: With this study for the first time effects of post annealing on morphological, structural, optical and electrical properties of spray pyrolyzed copper–indium–gallium–sulfide (CuInGaS2) thin films have been investigated. Pros-and-cons of conventional (CA) and rapid thermal annealing (RTA) have been discussed to obtain the high quality thin film absorbers for solar cell applications. X-ray diffraction analysis revealed that all of the spray pyrolyzed CuInGaS2 thin films have chalcopyrite structures with a highly (1 1 2) preferential orientation. Raman spectra also confirmed this structure. However, metal oxide secondary phases such as copper oxide and gallium oxide were detected when the temperature ramp rate was increased during RTA process. Energy dispersive X-ray measurements revealed that both copper and gallium diffused through the surface after annealing processes. Moreover, copper diffusion became pronounced especially at high annealing temperatures. Optical transmission measurements in the wavelength range between 600 and 1100 nm showed that band gap energy of CuInGaS2 thin films was ranging between 1.36 and 1.51 eV depending on the annealing conditions. Very high mobility values have been observed for both processes. The maximum electrical mobility, 30.9 cm2/V s, was observed for the films annealed at 600 °C via CA. This is the highest reported value among the CuInGaS2 thin film absorbers deposited by both solution and vacuum based techniques. As a result, post-annealing of spray pyrolyzed CuInGaS2 thin films without usage of highly toxic gases, reported in this study, is very

  2. Drain bias effect on the instability of amorphous indium gallium zinc oxide thin film transistor

    International Nuclear Information System (INIS)

    We fabricated amorphous indium gallium zinc oxide thin film transistors (TFTs) in a top gate structure on a glass substrate. We investigated the effect of drain bias on the instability of the device. Although the device showed highly stable characteristics under both positive and negative gate bias stress, it showed significant degradation in the transfer characteristics under drain bias stress. The degradation phenomena are somewhat similar to those of negative gate bias illumination stress (NBIS). In the case of NBIS, degradation mechanisms have been confused between two kinds of illustrations, one of which is hole trapping in the gate insulator and the other is an increase of electron density in the active layer. Our experimental results revealed that the degradation mechanism of drain bias stress is closer to the latter mechanism of NBIS in amorphous oxide TFTs. - Highlights: ► Drain bias also degrades amorphous oxide thin film transistors. ► Increase of electron density near the drain junction occurs under drain bias stress. ► Oxygen vacancies can be ionized through the impingement of fast electrons

  3. Interface location-controlled indium gallium zinc oxide thin-film transistors using a solution process

    International Nuclear Information System (INIS)

    The role of an interface as an electron-trapping layer in double-stacked indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) was investigated and interface location-controlled (ILC) IGZO TFTs were introduced. In the ILC TFTs, the thickness of the top and bottom IGZO layers is controlled to change the location of the interface layer. The system exhibited improved electrical characteristics as the location of the interface layer moved further from the gate insulator: field-effect mobility increased from 0.36 to 2.17 cm2 V−1 s−1, and the on-current increased from 2.43  ×  10−5 to 1.33  ×  10−4 A. The enhanced electrical characteristics are attributed to the absence of an electron-trapping interface layer in the effective channel layer where electrons are accumulated under positive gate bias voltage. (paper)

  4. Point contacts at the copper-indium-gallium-selenide interface—A theoretical outlook

    Science.gov (United States)

    Bercegol, Adrien; Chacko, Binoy; Klenk, Reiner; Lauermann, Iver; Lux-Steiner, Martha Ch.; Liero, Matthias

    2016-04-01

    For a long time, it has been assumed that recombination in the space-charge region of copper-indium-gallium-selenide (CIGS) is dominant, at least in high efficiency solar cells with low band gap. The recent developments like potassium fluoride post deposition treatment and point-contact junction may call this into question. In this work, a theoretical outlook is made using three-dimensional simulations to investigate the effect of point-contact openings through a passivation layer on CIGS solar cell performance. A large set of solar cells is modeled under different scenarios for the charged defect levels and density, radius of the openings, interface quality, and conduction band offset. The positive surface charge created by the passivation layer induces band bending and this influences the contact (CdS) properties, making it beneficial for the open circuit voltage and efficiency, and the effect is even more pronounced when coverage area is more than 95%, and also makes a positive impact on the device performance, even in the presence of a spike at CIGS/CdS heterojunction.

  5. Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

    International Nuclear Information System (INIS)

    Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm2 at a bias voltage of −2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C61-butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 1012 Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiOx as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment

  6. Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz

    Science.gov (United States)

    Zhang, Jiawei; Li, Yunpeng; Zhang, Binglei; Wang, Hanbin; Xin, Qian; Song, Aimin

    2015-07-01

    Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

  7. Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Arora, H. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Phelma–Grenoble INP, 3 Parvis Louis Néel, 38016 Grenoble Cedex 01 (France); Malinowski, P. E., E-mail: pawel.malinowski@imec.be; Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Heremans, P. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); ESAT, Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, B-3001 Leuven (Belgium)

    2015-04-06

    Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm{sup 2} at a bias voltage of −2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C{sub 61}-butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 10{sup 12} Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiO{sub x} as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment.

  8. Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

    Science.gov (United States)

    Jin, Sung Hun; Kang, Seung-Kyun; Cho, In-Tak; Han, Sang Youn; Chung, Ha Uk; Lee, Dong Joon; Shin, Jongmin; Baek, Geun Woo; Kim, Tae-il; Lee, Jong-Ho; Rogers, John A

    2015-04-22

    This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them, show field effect mobilities (∼10 cm2/Vs), on/off ratios (∼2×10(6)), subthreshold slopes (∼220 mV/dec), Ohmic contact properties, and oscillation frequency of 5.67 kHz at supply voltages of 19 V, all comparable to otherwise similar devices constructed in conventional ways with standard, nontransient materials. Studies of dissolution kinetics for a-IGZO films in deionized water, bovine serum, and phosphate buffer saline solution provide data of relevance for the potential use of these materials and this technology in temporary biomedical implants. PMID:25805699

  9. Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz.

    Science.gov (United States)

    Zhang, Jiawei; Li, Yunpeng; Zhang, Binglei; Wang, Hanbin; Xin, Qian; Song, Aimin

    2015-01-01

    Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning. PMID:26138510

  10. Performance of Indium Gallium Zinc Oxide Thin-Film Transistors in Saline Solution

    Science.gov (United States)

    Gupta, S.; Lacour, S. P.

    2016-06-01

    Transistors are often envisioned as alternative transducing devices to microelectrodes to communicate with the nervous system. Independently of the selected technology, the transistors should have reliable performance when exposed to physiological conditions (37°C, 5% CO2). Here, we report on the reliable performance of parylene encapsulated indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) after prolonged exposure to phosphate buffer saline solution in an incubator. The encapsulated IGZO TFTs (W/L = 500 μm/20 μm) have an ON/OFF current ratio of 107 and field effect mobility of 8.05 ± 0.78 cm2/Vs. The transistors operate within 4 V; their threshold voltages and subthreshold slope are ~1.9 V and 200 mV/decade, respectively. After weeks immersed in saline solution and at 37°C, we did not observe any significant deterioration in the transistors' performance. The long-term stability of IGZO transistors at physiological conditions is a promising result in the direction of metal oxide bioelectronics.

  11. Photovoltaic characterization of Copper-Indium-Gallium Sulfide (CIGS2) solar cells for lower absorber thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    Vasekar, Parag S., E-mail: psvasekar@yahoo.co [Florida Solar Energy Center, 1679 Clearlake Rd., Cocoa FL, 32922 (United States); Jahagirdar, Anant H.; Dhere, Neelkanth G. [Florida Solar Energy Center, 1679 Clearlake Rd., Cocoa FL, 32922 (United States)

    2010-01-31

    Chalcopyrites are important contenders among thin-film solar cells due to their direct band gap and higher absorption coefficient. Copper-Indium-Gallium Sulfide (CIGS2) is a chalcopyrite material with a near-optimum band gap of {approx} 1.5 eV. Record efficiency of 11.99% has been achieved on a 2.7 {mu}m CIGS2 film prepared by sulfurization at the Florida Solar Energy Center (FSEC) PV Materials Lab. In this work, photovoltaic performance analysis has been carried out for a 1.5 {mu}m absorber prepared under similar conditions as that of a 2.7 {mu}m thick absorber sample. It was observed that there is an increase in diode factor and reverse saturation current density when the absorber thickness was decreased. The diode factor increased from 1.69 to 2.18 and reverse saturation current density increased from 1.04 x 10{sup -10} mA/cm{sup 2} to 1.78 x 10{sup -8} mA/cm{sup 2}. This can be attributed to a decrease in the grain size when the absorber thickness is decreased. It was also observed that there is an improvement in the shunt resistance. Improvement in shunt resistance can be attributed to optimized value of i:ZnO for lower absorber thickness and less shunting paths due to a smoother absorber.

  12. Photovoltaic characterization of Copper-Indium-Gallium Sulfide (CIGS2) solar cells for lower absorber thicknesses

    International Nuclear Information System (INIS)

    Chalcopyrites are important contenders among thin-film solar cells due to their direct band gap and higher absorption coefficient. Copper-Indium-Gallium Sulfide (CIGS2) is a chalcopyrite material with a near-optimum band gap of ∼ 1.5 eV. Record efficiency of 11.99% has been achieved on a 2.7 μm CIGS2 film prepared by sulfurization at the Florida Solar Energy Center (FSEC) PV Materials Lab. In this work, photovoltaic performance analysis has been carried out for a 1.5 μm absorber prepared under similar conditions as that of a 2.7 μm thick absorber sample. It was observed that there is an increase in diode factor and reverse saturation current density when the absorber thickness was decreased. The diode factor increased from 1.69 to 2.18 and reverse saturation current density increased from 1.04 x 10-10 mA/cm2 to 1.78 x 10-8 mA/cm2. This can be attributed to a decrease in the grain size when the absorber thickness is decreased. It was also observed that there is an improvement in the shunt resistance. Improvement in shunt resistance can be attributed to optimized value of i:ZnO for lower absorber thickness and less shunting paths due to a smoother absorber.

  13. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Tsung-Jui; Wu, Yuh-Renn, E-mail: yrwu@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Shivaraman, Ravi; Speck, James S. [Department of Materials, University of California, Santa Barbara, California 93106 (United States)

    2014-09-21

    In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

  14. Evaluation of critical materials for five advanced design photovoltaic cells with an assessment of indium and gallium

    Energy Technology Data Exchange (ETDEWEB)

    Watts, R.L.; Gurwell, W.E.; Jamieson, W.M.; Long, L.W.; Pawlewicz, W.T.; Smith, S.A.; Teeter, R.R.

    1980-05-01

    The objective of this study is to identify potential material supply constraints due to the large-scale deployment of five advanced photovoltaic (PV) cell designs, and to suggest strategies to reduce the impacts of these production capacity limitations and potential future material shortages. This report presents the results of the screening of the five following advanced PV cell designs: polycrystalline silicon, amorphous silicon, cadmium sulfide/copper sulfide frontwall, polycrystalline gallium arsenide MIS, and advanced concentrator-500X. Each of these five cells is screened individually assuming that they first come online in 1991, and that 25 GWe of peak capacity is online by the year 2000. A second computer screening assumes that each cell first comes online in 1991 and that each cell has 5 GWe of peak capacity by the year 2000, so that the total online cpacity for the five cells is 25 GWe. Based on a review of the preliminary basline screening results, suggestions were made for varying such parameters as the layer thickness, cell production processes, etc. The resulting PV cell characterizations were then screened again by the CMAP computer code. Earlier DOE sponsored work on the assessment of critical materials in PV cells conclusively identtified indium and gallium as warranting further investigation as to their availability. Therefore, this report includes a discussion of the future availability of gallium and indium. (WHK)

  15. Synthesis of Two New Group 13 Benzoato-Chloro Complexes: A Structural Study of Gallium and Indium Chelating Carboxylates

    Science.gov (United States)

    Duraj, Stan A.; Hepp, Aloysius F.; Woloszynek, Robert; Protasiewicz, John D.; Dequeant, Michael; Ren, Tong

    2010-01-01

    Two new heteroleptic chelated-benzoato gallium (III) and indium (III) complexes have been prepared and structurally characterized. The molecular structures of [GaCl2(4-Mepy)2(O2CPh)]4-Mepy (1) and [InCl(4-Mepy)2(O2CPh)2]4-Mepy (2) have been determined by single-crystal x-ray diffraction. The gallium compound (1) is a distorted octahedron with cis-chloride ligands co-planar with the chelating benzoate and the 4-methylpyridines trans to each other. This is the first example of a Ga(III) structure with a chelating benzoate. The indium compound (2) is a distorted pentagonal bipyramid with two chelating benzoates, one 4-methylpyridine in the plane and a chloride trans to the other 4-methylpyridine. The indium bis-benzoate is an unusual example of a seven-coordinate structure with classical ligands. Both complexes, which due to the chelates, could also be described as pseudo-trigonal bipyramidal, include a three-bladed motif with three roughly parallel aromatic rings that along with a solvent of crystallization and electron-withdrawing chloride ligand(s) stabilize the solid-state structures.

  16. Synthesis, Characterization, and Processing of Copper, Indium, and Gallium Dithiocarbamates for Energy Conversion Applications

    Science.gov (United States)

    Duraj, S. A.; Duffy, N. V.; Hepp, A. F.; Cowen, J. E.; Hoops, M. D.; Brothrs, S. M.; Baird, M. J.; Fanwick, P. E.; Harris, J. D.; Jin, M. H.-C.

    2009-01-01

    Ten dithiocarbamate complexes of indium(III) and gallium(III) have been prepared and characterized by elemental analysis, infrared spectra and melting point. Each complex was decomposed thermally and its decomposition products separated and identified with the combination of gas chromatography/mass spectrometry. Their potential utility as photovoltaic materials precursors was assessed. Bis(dibenzyldithiocarbamato)- and bis(diethyldithiocarbamato)copper(II), Cu(S2CN(CH2C6H5)2)2 and Cu(S2CN(C2H5)2)2 respectively, have also been examined for their suitability as precursors for copper sulfides for the fabrication of photovoltaic materials. Each complex was decomposed thermally and the products analyzed by GC/MS, TGA and FTIR. The dibenzyl derivative complex decomposed at a lower temperature (225-320 C) to yield CuS as the product. The diethyl derivative complex decomposed at a higher temperature (260-325 C) to yield Cu2S. No Cu containing fragments were noted in the mass spectra. Unusual recombination fragments were observed in the mass spectra of the diethyl derivative. Tris(bis(phenylmethyl)carbamodithioato-S,S'), commonly referred to as tris(N,N-dibenzyldithiocarbamato)indium(III), In(S2CNBz2)3, was synthesized and characterized by single crystal X-ray crystallography. The compound crystallizes in the triclinic space group P1(bar) with two molecules per unit cell. The material was further characterized using a novel analytical system employing the combined powers of thermogravimetric analysis, gas chromatography/mass spectrometry, and Fourier transform infrared (FT-IR) spectroscopy to investigate its potential use as a precursor for the chemical vapor deposition (CVD) of thin film materials for photovoltaic applications. Upon heating, the material thermally decomposes to release CS2 and benzyl moieties in to the gas phase, resulting in bulk In2S3. Preliminary spray CVD experiments indicate that In(S2CNBz2)3 decomposed on a Cu substrate reacts to produce

  17. Measuring systolic ankle and toe pressure using the strain gauge technique--a comparison study between mercury and indium-gallium strain gauges

    DEFF Research Database (Denmark)

    Broholm, Rikke; Wiinberg, Niels; Simonsen, Lene

    2014-01-01

    BACKGROUND: Measurement of the ankle and toe pressures are often performed using a plethysmograph, compression cuffs and a strain gauge. Usually, the strain gauge contains mercury but other alternatives exist. From 2014, the mercury-containing strain gauge will no longer be available in the...... European Union. The aim of this study was to compare an indium-gallium strain gauge to the established mercury-containing strain gauge. METHODS: Consecutive patients referred to the Department of Clinical Physiology and Nuclear Medicine at Bispebjerg and Frederiksberg Hospitals for measurements of systolic...... ankle and toe pressures volunteered for the study. Ankle and toe pressures were measured twice with the mercury and the indium-gallium strain gauge in random order. Comparison of the correlation between the mean pressure using the mercury and the indium-gallium device and the difference between the two...

  18. Comparison of composition and atomic structure of amorphous indium gallium zinc oxide thin film transistor before and after positive bias temperature stress by transmission electron microscopy

    International Nuclear Information System (INIS)

    In this paper high resolution transmission electron microscopy analysis is performed on indium gallium zinc oxide thin film transistors to determine the crystal structure of the material. The relative elemental concentrations of indium, gallium, zinc and oxygen were quantified and analyzed using energy dispersive spectroscopy before and after subjection to positive gate bias temperature stress at 80 °C. Notable changes in the concentration of oxygen in the device channel were observed along with a reduced concentration of the elements indium, gallium and zinc after electrical stressing. We speculate this relative reduction in metal concentration could be attributed to the outdiffusion of metal ions from the channel region into the surrounding thermal oxide and the increase in the oxygen concentration in the stressed device is related to electric field assisted adsorption of oxygen from the ambient. (paper)

  19. Thermodynamics of separation of uranium from neodymium between the gallium-indium liquid alloy and the LiCl-KCl molten salt phases

    International Nuclear Information System (INIS)

    Highlights: • The behavior of neodymium and uranium on liquid gallium-indium eutectic alloy was carried out. • The experiments were done in fused LiCl-KCl eutectic vs. Cl-/Cl2 reference electrode at the temperature range 723-823 K. • Thermodynamic properties of Nd-Ga-In alloy and the separation factor U/Nd were calculated. - Abstract: This work presents the electrochemical study of neodymium and uranium compounds in fused LiCl-KCl eutectic vs. Cl-/Cl2 reference electrode in the temperature range 723-823 K on liquid gallium-indium eutectic alloy. The activity, solubility and the activity coefficients of neodymium were calculated. The separation factor of uranium from neodymium on gallium-indium eutectic alloy was determined. The obtained data show the perspective of used this system in future innovation method for recovery of nuclear waste

  20. Nanoscale Synthesis of Two Porphyrin-Based MOFs with Gallium and Indium.

    Science.gov (United States)

    Rhauderwiek, Timo; Waitschat, Steve; Wuttke, Stefan; Reinsch, Helge; Bein, Thomas; Stock, Norbert

    2016-06-01

    Two porphyrin-based metal-organic frameworks (MOFs) containing gallium or indium, [Ga2(OH)2(H2TCPP)]·3DMF·3H2O (Ga-PMOF) and [In2(OH)2(H2TCPP)]·3DMF·4H2O (In-PMOF) (H6TCPP = 4-tetracarboxyphenylporphyrin), were discovered using high-throughput methods. The structure was refined by the Rietveld-method starting from the structure model of Al-PMOF, [Al2(OH)2(H2TCPP)]. The new PMOFs exhibit BET surface areas between 1150 and 1400 m(2) g(-1) and are also porous toward CO2 (Ga-PMOF, 15.2 wt %; In-PMOF, 12.9 wt %). They are thermally stable in air up to 330 °C, but show limited chemical stabilities toward acids and bases. In order to achieve size control, different synthesis routes were investigated, i.e., batch synthesis at different temperatures (yield: In-PMOF-bs-th 96%, Ga-PMOF-bs-th 87%), ultrasound-assisted synthesis (yield: In-PMOF-bs-us 85%), and continuous-flow synthesis (yield: Ga-PMOF-cf 71%). By using these different methods we could control the nucleation rate and the crystal size. The crystal sizes were found to vary about 60 to 160 nm and 70 to 130 nm for Ga- and In-PMOF, respectively, which was proven by dynamic light scattering (DLS), powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) measurements. PMID:27203724

  1. Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jiawei; Zhang, Linqing; Ma, Xiaochen; Wilson, Joshua [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Jin, Jidong [Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ (United Kingdom); Du, Lulu; Xin, Qian [School of Physics, Shandong University, Jinan 250100 (China); Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); School of Physics, Shandong University, Jinan 250100 (China)

    2015-08-31

    The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant of 1.4 × 10{sup −9} was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10{sup −5}. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 10{sup 15 }eV{sup −1 }cm{sup −2}. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes.

  2. Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

    International Nuclear Information System (INIS)

    The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant of 1.4 × 10−9 was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10−5. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 1015 eV−1 cm−2. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes

  3. Electromechanical properties of amorphous indium-gallium-zinc-oxide transistors structured with an island configuration on plastic

    Science.gov (United States)

    Park, Chang Bum; Na, Hyung Il; Yoo, Soon Sung; Park, Kwon-Shik

    2016-03-01

    A comparative study of the electromechanical properties was carried out on a low-temperature-processed amorphous indium-gallium-zinc-oxide thin-film transistor, particularly with regard to the structural design of the device under the stress accumulation of an outward bending surface. Shown herein is the reliable electromechanical integrity of island-structured devices against the mechanical strain at bending radii of mm order. The onset of crack strain also closely corresponded to the electrical failure of the stressed device. These results revealed that the island configuration on the bending surface effectively suppresses the stress accumulation on sheets composed of inorganic stacked layers in a uniaxial direction.

  4. High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

    International Nuclear Information System (INIS)

    Quinary indium gallium zinc aluminum oxide (IGZAO) multicomponent oxide films were deposited using indium gallium zinc oxide (IGZO) target and Al target by radio frequency magnetron cosputtering system. An extra carrier transport pathway could be provided by the 3 s orbitals of Al cations to improve the electrical properties of the IGZO films, and the oxygen instability could be stabilized by the strong Al-O bonds in the IGZAO films. The electron concentration change and the electron mobility change of the IGZAO films for aging time of 10 days under an air environment at 40 °C and 75% humidity were 20.1% and 2.4%, respectively. The experimental results verified the performance stability of the IGZAO films. Compared with the thin film transistors (TFTs) using conventional IGZO channel layer, in conducting the stability of TFTs with IGZAO channel layer, the transconductance gm change, threshold voltage VT change, and the subthreshold swing S value change under the same aging condition were improved to 7.9%, 10.5%, and 14.8%, respectively. Furthermore, the stable performances of the IGZAO TFTs were also verified by the positive gate bias stress. In this research, the quinary IGZAO multicomponent oxide films and that applied in TFTs were the first studied in the literature

  5. Metastability of copper indium gallium diselenide polycrystalline thin film solar cell devices

    Science.gov (United States)

    Lee, Jinwoo

    High efficiency thin film solar cells have the potential for being a world energy solution because of their cost-effectiveness. Looking to the future of solar energy, there is the opportunity and challenge for thin film solar cells. The main theme of this research is to develop a detailed understanding of electronically active defect states and their role in limiting device performance in copper indium gallium diselenide (CIGS) solar cells. Metastability in the CIGS is a good tool to manipulate electronic defect density and thus identify its effect on the device performance. Especially, this approach keeps many device parameters constant, including the chemical composition, grain size, and interface layers. Understanding metastability is likely to lead to the improvement of CIGS solar cells. We observed systematic changes in CIGS device properties as a result of the metastable changes, such as increases in sub-bandgap defect densities and decreases in hole carrier mobilities. Metastable changes were characterized using high frequency admittance spectroscopy, drive-level capacitance profiling (DLCP), and current-voltage measurements. We found two distinctive capacitance steps in the high frequency admittance spectra that correspond to (1) the thermal activation of hole carriers into/out of acceptor defect and (2) a temperature-independent dielectric relaxation freeze-out process and an equivalent circuit analysis was employed to deduce the dielectric relaxation time. Finally, hole carrier mobility was deduced once hole carrier density was determined by DLCP method. We found that metastable defect creation in CIGS films can be made either by light-soaking or with forward bias current injection. The deep acceptor density and the hole carrier density were observed to increase in a 1:1 ratio, which seems to be consistent with the theoretical model of VCu-V Se defect complex suggested by Lany and Zunger. Metastable defect creation kinetics follows a sub-linear power law

  6. Eutectic Gallium-Indium (EGaIn) : A Liquid Metal Alloy for the Formation of Stable Structures in Microchannels at Room Temperature

    NARCIS (Netherlands)

    Dickey, Michael D.; Chiechi, Ryan C.; Larsen, Ryan J.; Weiss, Emily A.; Weitz, David A.; Whitesides, George M.

    2008-01-01

    This paper describes the rheological behavior of the liquid metal eutectic gallium-indium (EGaIn) as it is injected into microfluidic channels to form stable microstructures of liquid metal. EGaIn is well-suited for this application because of its rheological properties at room temperature: it behav

  7. A study on the optics of copper indium gallium (di)selenide (CIGS) solar cells with ultra-thin absorber layers

    NARCIS (Netherlands)

    Xu, M.; Wachters, A.J.H.; Deelen, J. van; Mourad, M.C.D.; Buskens, P.J.P.

    2014-01-01

    We present a systematic study of the effect of variation of the zinc oxide (ZnO) and copper indium gallium (di)selenide (CIGS) layer thickness on the absorption characteristics of CIGS solar cells using a simulation program based on finite element method (FEM). We show that the absorption in the CIG

  8. Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application

    NARCIS (Netherlands)

    Tripathi, A.K.; Smits, E.C.P.; Putten, J.B.P.H. van der; Neer, M. van; Myny, K.; Nag, M.; Steudel, S.; Vicca, P.; O'Neill, K.; Veenendaal, E. van; Genoe, G.; Heremans, P.; Gelinck, G.H.

    2011-01-01

    In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 µm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The

  9. Gallium and indium complexes containing the bis(imino)phenoxide ligand: synthesis, structural characterization and polymerization studies.

    Science.gov (United States)

    Ghosh, Swarup; Gowda, Ravikumar R; Jagan, Rajamony; Chakraborty, Debashis

    2015-06-14

    A series of gallium and indium complexes containing a bis(imino)phenolate ligand framework were synthesized and completely characterized with different spectroscopic techniques. The molecular structures of a few complexes were determined using single crystal X-ray diffraction studies. These compounds were found to be extremely active towards the bulk ring opening polymerization (ROP) of lactides yielding polymers with high number average molecular weight (Mn) and controlled molecular weight distributions (MWDs). The neutral complexes produce isotactic enriched poly(lactic acid) (PLA) from rac-lactide (rac-LA) under melt conditions, whereas the ionic complex produces atactic PLA. The polymerizations are controlled, as evidenced by the narrow molecular distribution (MWDs) of the isolated polymers in addition to the linear nature of number average molecular weight (Mn) versus conversion plots with variations in monomer to catalyst ratios. The kinetic and mechanistic studies associated with these polymerizations have been performed. PMID:25977999

  10. High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

    KAUST Repository

    Nayak, Pradipta K.

    2012-05-16

    Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors(TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.

  11. Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors.

    Science.gov (United States)

    Wan, Chang Jin; Liu, Yang Hui; Zhu, Li Qiang; Feng, Ping; Shi, Yi; Wan, Qing

    2016-04-20

    In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation. PMID:27007748

  12. Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots

    KAUST Repository

    Elafandy, Rami T.

    2011-12-01

    Comparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.

  13. Pillar Initiated Growth of High Indium Content Bulk Indium Gallium Nitride to Improve the Material Quality for Photonic Devices

    Science.gov (United States)

    McFelea, Heather Dale

    The goal of this research was to reduce dislocations and strain in high indium content bulk InGaN to improve quality for optical devices. In an attempt to achieve this goal, InGaN pillars were grown with compositions that matched the composition of the bulk InGaN grown on top. Pillar height and density were optimized to facilitate coalescence on top of the pillars. It was expected that dislocations within the pillars would bend to side facets, thereby reducing the dislocation density in the bulk overgrowth, however this was not observed. It was also expected that pillars would be completely relaxed at the interface with the substrate. It was shown that pillars are mostly relaxed, but not completely. Mechanisms are proposed to explain why threading dislocations did not bend and how complete relaxation may have been achieved by mechanisms outside of interfacial misfit dislocation formation. Phase separation was not observed by TEM but may be related to the limitations of the sample or measurements. High indium observed at facets and stacking faults could be related to the extra photoluminescence peaks measured. This research focused on the InGaN pillars and first stages of coalescence on top of the pillars, saving bulk growth and device optimization for future research.

  14. Si3N4-TiC composites modified by gallium, indium, cerium, zirconium and zinc oxides additives

    International Nuclear Information System (INIS)

    The paper presents the results of experiments on the modification of ceramic composites of the Si3N4-Al2O3-Y2O3-TiC system by adding gallium, indium, cerium, zirconium and zinc oxides with the aim of improving the fracture toughness of the material. For all the compositions, the value of stress intensity factor KIC is very high and ranges from 7.5 to 9 MPa m0,5 depending on the kind and amount of the additive. The best fracture toughness was obtained in 60% Si3N4-Al2O3-3.5%Y2O3-15%TiC sinters added with 11% of ZrO2 or 6.5% of CeO. An interesting experimental fact is that an increase of the KIC value does not result in any drastic decrease of the material hardness. In order to explain the role playing by the additives in increasing so significantly the fracture toughness of the sintered materials, their microstructures were examined. Tests of the machining properties of the Si3N4-Al2O3-Y2O3-TiC composites when used for the high-speed cutting of heat-treated 45 steel have shown that even a small amount of gallium, zirconium, zinc or cerium oxide introduced in place of Al2O3 increases appreciably the service life of the ceramic tool. (author)

  15. A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiNx coupled junction

    International Nuclear Information System (INIS)

    We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiNx). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiNx junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm2 on-current density measured at −7 V; lower than 7.3 × 10−9 A/cm2 off-current density; 2.53 ideality factor; and high rectifying ratio of 108–109. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiNx/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode

  16. Nonstationary structure of atomic and molecular layers in electrothermal. Atomic absorption spectrometry: formation of atomic and molecular absorbing layers of gallium and indium

    International Nuclear Information System (INIS)

    The dynamics of the formation of absorbing layers of gallium and indium atoms and their compounds in a graphite tubular atomizer was investigated by the shadow spectral filming method. These compounds are localozed in the central part of the furnace over the platform and dissapear ay the hotter walls. It the case of gallium and indium atomization, the effects of chemical reactions between the vapor and the walls of the furnace on the formation of absorbing layers are stronger than that of diffusion and convective mass-transfer processes, which are common to all of the elements. Atom propagation from the center to the stomizer ends proceeds through the cascade mechanism because of its relatively low rate of warming up and strong longitudinal anisothermicity

  17. Ion beam analysis of aluminium in thin layers

    Energy Technology Data Exchange (ETDEWEB)

    Healy, M.J.F. E-mail: m.j.f.healy@rmcs.cranfield.ac.uk; Pidduck, A.J.; Dollinger, G.; Gorgens, L.; Bergmaier, A

    2002-05-01

    This work quantifies aluminium in thin surface and near surface layers. In one example, the layer overlies a thin gallium nitride layer on an aluminium oxide substrate and in a second example the aluminium exists just below the surface of an indium arsenide substrate. The technique of non-Rutherford elastic backscattering of protons was used for the samples where aluminum in the layer of interest needed to be resolved from aluminium in the sapphire substrate and the results were corroborated at the Technische Universitaet Muenchen using heavy ion elastic recoil detection analysis. In the second example, where it was unnecessary to isolate the signal of aluminium in the layer of interest (as the substrate contained no aluminium), then the {sup 27}Al(d,p{sub 01}){sup 28} Al nuclear reaction was used. The elastic proton scattering cross section of aluminum was found to vary very rapidly over the energy range of interest.

  18. Ecotoxicological assessment of solar cell leachates: Copper indium gallium selenide (CIGS) cells show higher activity than organic photovoltaic (OPV) cells.

    Science.gov (United States)

    Brun, Nadja Rebecca; Wehrli, Bernhard; Fent, Karl

    2016-02-01

    Despite the increasing use of photovoltaics their potential environmental risks are poorly understood. Here, we compared ecotoxicological effects of two thin-film photovoltaics: established copper indium gallium selenide (CIGS) and organic photovoltaic (OPV) cells. Leachates were produced by exposing photovoltaics to UV light, physical damage, and exposure to environmentally relevant model waters, representing mesotrophic lake water, acidic rain, and seawater. CIGS cell leachates contained 583 μg L(-1) molybdenum at lake water, whereas at acidic rain and seawater conditions, iron, copper, zinc, molybdenum, cadmium, silver, and tin were present up to 7219 μg L(-1). From OPV, copper (14 μg L(-1)), zinc (87 μg L(-1)) and silver (78 μg L(-1)) leached. Zebrafish embryos were exposed until 120 h post-fertilization to these extracts. CIGS leachates produced under acidic rain, as well as CIGS and OPV leachates produced under seawater conditions resulted in a marked hatching delay and increase in heart edema. Depending on model water and solar cell, transcriptional alterations occurred in genes involved in oxidative stress (cat), hormonal activity (vtg1, ar), metallothionein (mt2), ER stress (bip, chop), and apoptosis (casp9). The effects were dependent on the concentrations of cationic metals in leachates. Addition of ethylenediaminetetraacetic acid protected zebrafish embryos from morphological and molecular effects. Our study suggests that metals leaching from damaged CIGS cells, may pose a potential environmental risk. PMID:26615488

  19. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    International Nuclear Information System (INIS)

    We investigated the effects of top gate voltage (VTG) and temperature (in the range of 25 to 70 oC) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of VTG from -20V to +20V, decreases the threshold voltage (VTH) from 19.6V to 3.8V and increases the electron density to 8.8 x 1018cm−3. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on VTG. At VTG of 20V, the mobility decreases from 19.1 to 15.4 cm2/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at VTG of - 20V, the mobility increases from 6.4 to 7.5cm2/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate

  20. Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

    International Nuclear Information System (INIS)

    We have investigated the dependence of Negative-Bias-illumination-Stress (NBIS) upon channel length, in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The negative shift of the transfer characteristic associated with NBIS decreases for increasing channel length and is practically suppressed in devices with L = 100-μm. The effect is consistent with creation of donor defects, mainly in the channel regions adjacent to source and drain contacts. Excellent agreement with experiment has been obtained by an analytical treatment, approximating the distribution of donors in the active layer by a double exponential with characteristic length LD ∼ Ln ∼ 10-μm, the latter being the electron diffusion length. The model also shows that a device with a non-uniform doping distribution along the active layer is in all equivalent, at low drain voltages, to a device with the same doping averaged over the active layer length. These results highlight a new aspect of the NBIS mechanism, that is, the dependence of the effect upon the relative magnitude of photogenerated holes and electrons, which is controlled by the device potential/band profile. They may also provide the basis for device design solutions to minimize NBIS

  1. Saddle-like deformation in a dielectric elastomer actuator embedded with liquid-phase gallium-indium electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Wissman, J., E-mail: jwissman@andrew.cmu.edu [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Finkenauer, L. [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Deseri, L. [DICAM, Department of Mechanical, Civil and Environmental Engineering, University of Trento, via Mesiano 77 38123 Trento (Italy); TMHRI-Department of Nanomedicine, The Methodist Hospital Research Institute, 6565 Fannin St., MS B-490 Houston, Texas 77030 (United States); Mechanics, Materials and Computing Center, CEE and ME-CIT, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Majidi, C. [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Robotics Institute and Department of Civil and Environmental Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

    2014-10-14

    We introduce a dielectric elastomer actuator (DEA) composed of liquid-phase Gallium-Indium (GaIn) alloy electrodes embedded between layers of poly(dimethylsiloxane) (PDMS) and examine its mechanics using a specialized elastic shell theory. Residual stresses in the dielectric and sealing layers of PDMS cause the DEA to deform into a saddle-like geometry (Gaussian curvature K<0). Applying voltage Φ to the liquid metal electrodes induces electrostatic pressure (Maxwell stress) on the dielectric and relieves some of the residual stress. This reduces the longitudinal bending curvature and corresponding angle of deflection ϑ. Treating the elastomer as an incompressible, isotropic, NeoHookean solid, we develop a theory based on the principle of minimum potential energy to predict the principal curvatures as a function of Φ. Based on this theory, we predict a dependency of ϑ on Φ that is in strong agreement with experimental measurements performed on a GaIn-PDMS composite. By accurately modeling electromechanical coupling in a soft-matter DEA, this theory can inform improvements in design and fabrication.

  2. Derived reference doses for three compounds used in the photovoltaics industry: Copper indium diselenide, copper gallium diselenide, and cadmium telluride

    Energy Technology Data Exchange (ETDEWEB)

    Moskowitz, P.D.; Bernholc, N.; DePhillips, M.P.; Viren, J.

    1995-07-06

    Polycrystalline thin-film photovoltaic modules made from copper indium diselenide (CIS), copper gallium diselenide (CGS), and cadmium telluride (CdTe) arc nearing commercial development. A wide range of issues are being examined as these materials move from the laboratory to large-scale production facilities to ensure their commercial success. Issues of traditional interest include module efficiency, stability and cost. More recently, there is increased focus given to environmental, health and safety issues surrounding the commercialization of these same devices. An examination of the toxicological properties of these materials, and their chemical parents is fundamental to this discussion. Chemicals that can present large hazards to human health or the environment are regulated often more strictly than those that are less hazardous. Stricter control over how these materials are handled and disposed can increase the costs associated with the production and use of these modules dramatically. Similarly, public perception can be strongly influenced by the inherent biological hazard that these materials possess. Thus, this report: presents a brief background tutorial on how toxicological data are developed and used; overviews the toxicological data available for CIS, CGS and CdTe; develops ``reference doses`` for each of these compounds; compares the reference doses for these compounds with those of their parents; discusses the implications of these findings to photovoltaics industry.

  3. High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF4/Ar plasma

    International Nuclear Information System (INIS)

    We investigated the etching process of indium-gallium-zinc oxide (IGZO) thin films in an inductively coupled plasma system. The dry etching characteristics of the IGZO thin films were studied by varying the CF4/Ar gas mixing ratio, RF power, DC-bias voltage, and process pressure. We determined the following optimized process conditions: an RF power of 700 W, a DC-bias voltage of − 150 V, and a process pressure of 2 Pa. A maximum etch rate of 25.63 nm/min for the IGZO thin films was achieved in a plasma with CF4/Ar(= 25:75), and the selectivity of IGZO to Al and TiN was found to be 1.3 and 0.7, respectively. We determined the ionic composition of the CF4/Ar plasma using optical emission spectroscopy. Analysis of chemical reactions at the IGZO thin film surfaces was performed using X-ray photoelectron spectroscopy. - Highlights: • IGZO thin film was etched by CF4/Ar plasma as a function of gas mixing ratio. • IGZO bonds were broken Ar+ sputtering and then reacted with the C-Fx radicals. • The physical sputtering is dominant in etch control compared with chemical etching

  4. Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

    Science.gov (United States)

    Qian, Hui-Min; Yu, Guang; Lu, Hai; Wu, Chen-Fei; Tang, Lan-Feng; Zhou, Dong; Ren, Fang-Fang; Zhang, Rong; Zheng, You-Liao; Huang, Xiao-Ming

    2015-07-01

    The time and temperature dependence of threshold voltage shift under positive-bias stress (PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτstress = 0.72 eV for the PBS process and an average effective energy barrier Eτrecovery = 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development. Project supported by the National Basic Research Program of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Jiangsu Higher Education Institutions, China

  5. Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Kwang-Won; Cho, Won-Ju, E-mail: chowj@kw.ac.kr [Department of Electronic Materials Engineering, Kwangwoon University, 447-1, Wolgye-dong, Nowon-gu, Seoul 139-701 (Korea, Republic of)

    2014-11-24

    In this study, we evaluated the effects of microwave irradiation (MWI) post-deposition-annealing (PDA) treatment on the gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) and compared the results with a conventional thermal annealing PDA treatment. The MWI-PDA-treated a-IGZO TFTs exhibited enhanced electrical performance as well as improved long-term stability with increasing microwave power. The positive turn-on voltage shift (ΔV{sub ON}) as a function of stress time with positive bias and varying temperature was precisely modeled on a stretched-exponential equation, suggesting that charge trapping is a dominant mechanism in the instability of MWI-PDA-treated a-IGZO TFTs. The characteristic trapping time and average effective barrier height for electron transport indicate that the MWI-PDA treatment effectively reduces the defects in a-IGZO TFTs, resulting in a superior resistance against gate bias stress.

  6. Impact of severe cracked germanium (111) substrate on aluminum indium gallium phosphate light-emitting-diode's electro-optical performance

    Science.gov (United States)

    Annaniah, Luruthudass; Devarajan, Mutharasu

    2016-07-01

    Cracked die is a serious failure mode in the Light Emitting Diode (LED) industry - affecting LED quality and long-term reliability performance. In this paper an investigation has been carried out to find the correlation between severe cracked germanium (Ge) substrate of an aluminum indium gallium phosphate (AlInGaP) LED and its electro-optical performance after the Temperature Cycle (TC) test. The LED dice were indented at several bond forces using a die bonder. The indented dice were analysed using a Scanning Electron Microscope (SEM). The result showed that severe cracks were observed at 180 gF onward. As the force of indentation increases, crack formation also becomes more severe thus resulting in the chipping of the substrate. The cracked dies were packaged and the TC test was performed. The results did not show any electro-optical failure or degradation, even after a 1000 cycle TC test. Several mechanically cross-sectioned cracked die LEDs, were analysed using SEM and found that no crack reached the active layer. This shows that severely cracked Ge substrate are able to withstand a -40°C/+100°C TC test up to 1000 cycles and LED optical performance is not affected. A small leakage current was observed in all of the cracked die LEDs in comparison to the reference unit. However, this value is smaller than the product specification and is of no concern.

  7. Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments

    Science.gov (United States)

    Tak, Young Jun; Du Ahn, Byung; Park, Sung Pyo; Kim, Si Joon; Song, Ae Ran; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-02-01

    Indium-gallium-zinc oxide (IGZO) films, deposited by sputtering at room temperature, still require activation to achieve satisfactory semiconductor characteristics. Thermal treatment is typically carried out at temperatures above 300 °C. Here, we propose activating sputter- processed IGZO films using simultaneous ultraviolet and thermal (SUT) treatments to decrease the required temperature and enhance their electrical characteristics and stability. SUT treatment effectively decreased the amount of carbon residues and the number of defect sites related to oxygen vacancies and increased the number of metal oxide (M-O) bonds through the decomposition-rearrangement of M-O bonds and oxygen radicals. Activation of IGZO TFTs using the SUT treatment reduced the processing temperature to 150 °C and improved various electrical performance metrics including mobility, on-off ratio, and threshold voltage shift (positive bias stress for 10,000 s) from 3.23 to 15.81 cm2/Vs, 3.96 × 107 to 1.03 × 108, and 11.2 to 7.2 V, respectively.

  8. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    Directory of Open Access Journals (Sweden)

    Minkyu Chun

    2015-05-01

    Full Text Available We investigated the effects of top gate voltage (VTG and temperature (in the range of 25 to 70 oC on dual-gate (DG back-channel-etched (BCE amorphous-indium-gallium-zinc-oxide (a-IGZO thin film transistors (TFTs characteristics. The increment of VTG from -20V to +20V, decreases the threshold voltage (VTH from 19.6V to 3.8V and increases the electron density to 8.8 x 1018cm−3. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on VTG. At VTG of 20V, the mobility decreases from 19.1 to 15.4 cm2/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at VTG of - 20V, the mobility increases from 6.4 to 7.5cm2/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  9. Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Um, Jae Gwang; Mativenga, Mallory; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); Migliorato, Piero [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of); Electrical Engineering Division, Department of Engineering, Cambridge University, Cambridge CB3 0FA (United Kingdom)

    2015-06-21

    We have investigated the dependence of Negative-Bias-illumination-Stress (NBIS) upon channel length, in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The negative shift of the transfer characteristic associated with NBIS decreases for increasing channel length and is practically suppressed in devices with L = 100-μm. The effect is consistent with creation of donor defects, mainly in the channel regions adjacent to source and drain contacts. Excellent agreement with experiment has been obtained by an analytical treatment, approximating the distribution of donors in the active layer by a double exponential with characteristic length L{sub D} ∼ L{sub n} ∼ 10-μm, the latter being the electron diffusion length. The model also shows that a device with a non-uniform doping distribution along the active layer is in all equivalent, at low drain voltages, to a device with the same doping averaged over the active layer length. These results highlight a new aspect of the NBIS mechanism, that is, the dependence of the effect upon the relative magnitude of photogenerated holes and electrons, which is controlled by the device potential/band profile. They may also provide the basis for device design solutions to minimize NBIS.

  10. Semiconductor to metallic transition in bulk accumulated amorphous indium-gallium-zinc-oxide dual gate thin-film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Chun, Minkyu; Chowdhury, Md Delwar Hossain; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

    2015-05-15

    We investigated the effects of top gate voltage (V{sub TG}) and temperature (in the range of 25 to 70 {sup o}C) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of V{sub TG} from -20V to +20V, decreases the threshold voltage (V{sub TH}) from 19.6V to 3.8V and increases the electron density to 8.8 x 10{sup 18}cm{sup −3}. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on V{sub TG}. At V{sub TG} of 20V, the mobility decreases from 19.1 to 15.4 cm{sup 2}/V ⋅ s with increasing temperature, showing a metallic conduction. On the other hand, at V{sub TG} of - 20V, the mobility increases from 6.4 to 7.5cm{sup 2}/V ⋅ s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.

  11. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  12. Crystallization behavior of amorphous indium-gallium-zinc-oxide films and its effects on thin-film transistor performance

    Science.gov (United States)

    Suko, Ayaka; Jia, JunJun; Nakamura, Shin-ichi; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki; Shigesato, Yuzo

    2016-03-01

    Amorphous indium-gallium-zinc oxide (a-IGZO) films were deposited by DC magnetron sputtering and post-annealed in air at 300-1000 °C for 1 h to investigate the crystallization behavior in detail. X-ray diffraction, electron beam diffraction, and high-resolution electron microscopy revealed that the IGZO films showed an amorphous structure after post-annealing at 300 °C. At 600 °C, the films started to crystallize from the surface with c-axis preferred orientation. At 700-1000 °C, the films totally crystallized into polycrystalline structures, wherein the grains showed c-axis preferred orientation close to the surface and random orientation inside the films. The current-gate voltage (Id-Vg) characteristics of the IGZO thin-film transistor (TFT) showed that the threshold voltage (Vth) and subthreshold swing decreased markedly after the post-annealing at 300 °C. The TFT using the totally crystallized films also showed the decrease in Vth, whereas the field-effect mobility decreased considerably.

  13. High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes.

    Science.gov (United States)

    Secor, Ethan B; Smith, Jeremy; Marks, Tobin J; Hersam, Mark C

    2016-07-13

    Recent developments in solution-processed amorphous oxide semiconductors have established indium-gallium-zinc-oxide (IGZO) as a promising candidate for printed electronics. A key challenge for this vision is the integration of IGZO thin-film transistor (TFT) channels with compatible source/drain electrodes using low-temperature, solution-phase patterning methods. Here we demonstrate the suitability of inkjet-printed graphene electrodes for this purpose. In contrast to common inkjet-printed silver-based conductive inks, graphene provides a chemically stable electrode-channel interface. Furthermore, by embedding the graphene electrode between two consecutive IGZO printing passes, high-performance IGZO TFTs are achieved with an electron mobility of ∼6 cm(2)/V·s and current on/off ratio of ∼10(5). The resulting printed devices exhibit robust stability to aging in ambient as well as excellent resilience to thermal stress, thereby offering a promising platform for future printed electronics applications. PMID:27327555

  14. Low-Temperature Photochemically Activated Amorphous Indium-Gallium-Zinc Oxide for Highly Stable Room-Temperature Gas Sensors.

    Science.gov (United States)

    Jaisutti, Rawat; Kim, Jaeyoung; Park, Sung Kyu; Kim, Yong-Hoon

    2016-08-10

    We report on highly stable amorphous indium-gallium-zinc oxide (IGZO) gas sensors for ultraviolet (UV)-activated room-temperature detection of volatile organic compounds (VOCs). The IGZO sensors fabricated by a low-temperature photochemical activation process and exhibiting two orders higher photocurrent compared to conventional zinc oxide sensors, allowed high gas sensitivity against various VOCs even at room temperature. From a systematic analysis, it was found that by increasing the UV intensity, the gas sensitivity, response time, and recovery behavior of an IGZO sensor were strongly enhanced. In particular, under an UV intensity of 30 mW cm(-2), the IGZO sensor exhibited gas sensitivity, response time and recovery time of 37%, 37 and 53 s, respectively, against 750 ppm concentration of acetone gas. Moreover, the IGZO gas sensor had an excellent long-term stability showing around 6% variation in gas sensitivity over 70 days. These results strongly support a conclusion that a low-temperature solution-processed amorphous IGZO film can serve as a good candidate for room-temperature VOCs sensors for emerging wearable electronics. PMID:27430635

  15. Thin-film copper indium gallium selenide solar cell based on low-temperature all-printing process.

    Science.gov (United States)

    Singh, Manjeet; Jiu, Jinting; Sugahara, Tohru; Suganuma, Katsuaki

    2014-09-24

    In the solar cell field, development of simple, low-cost, and low-temperature fabrication processes has become an important trend for energy-saving and environmental issues. Copper indium gallium selenide (CIGS) solar cells have attracted much attention due to the high absorption coefficient, tunable band gap energy, and high efficiency. However, vacuum and high-temperature processing in fabrication of solar cells have limited the applications. There is a strong need to develop simple and scalable methods. In this work, a CIGS solar cell based on all printing steps and low-temperature annealing is developed. CIGS absorber thin film is deposited by using dodecylamine-stabilized CIGS nanoparticle ink followed by printing buffer layer. Silver nanowire (AgNW) ink and sol-gel-derived ZnO precursor solution are used to prepare a highly conductive window layer ZnO/[AgNW/ZnO] electrode with a printing method that achieves 16 Ω/sq sheet resistance and 94% transparency. A CIGS solar cell based on all printing processes exhibits efficiency of 1.6% with open circuit voltage of 0.48 V, short circuit current density of 9.7 mA/cm(2), and fill factor of 0.34 for 200 nm thick CIGS film, fabricated under ambient conditions and annealed at 250 °C. PMID:25180569

  16. Comparative study of highly dense aluminium- and gallium-doped zinc oxide transparent conducting sol–gel thin films

    Indian Academy of Sciences (India)

    Naji Al Dahoudi

    2014-10-01

    Transparent conducting aluminium- and gallium-doped zinc oxide (AZO and GZO) layers have been deposited by spin coating on glass substrates. The coatings have been sintered in air at 450 °C for 30 min and then post-annealed at 350 °C in a reducing atmosphere for 30 min. The electrical, optical and morphological properties of both coatings have been studied and compared. The conventional sols lead to very thin coating, typically 24 nm for a single layer of AZO and 32 nm of GZO with electrical resistivity of 0.72 and 0.35 cm, respectively. The value however, drastically decreases down to a minimum of 2.6 × 10-2 cm for AZO and 1.76 × 10-2 cm for GZO, when five multilayer coatings are made. The origin of these differences is due to the different morphology of the coatings showing different electron scattering process. The GZO sol leads to denser smoother structure (porosity of 5%) layers with an average roughness of 2.76 Å, while the AZO coating is formed by a more porous assembly (porosity of 20%) with an average roughness of 3.46 Å. Both coatings exhibit high transparency ( > 85%) in the visible spectrum range with a slight shift of the absorption energy gap.

  17. Comparison of indium-labeled-leukocyte imaging with sequential technetium-gallium scanning in the diagnosis of low-grade musculoskeletal sepsis. A prospective study

    International Nuclear Information System (INIS)

    We prospectively compared sequential technetium-gallium imaging with indium-labeled-leukocyte imaging in fifty patients with suspected low-grade musculoskeletal sepsis. Adequate images and follow-up examinations were obtained for forty-two patients. The presence or absence of low-grade sepsis was confirmed by histological and bacteriological examinations of tissue specimens taken at surgery in thirty of the forty-two patients. In these thirty patients, the sensitivity of sequential Tc-Ga imaging was 48 per cent, the specificity was 86 per cent, and the accuracy was 57 per cent, whereas the sensitivity of the indium-labeled-leukocyte technique was 83 per cent, the specificity was 86 per cent, and the accuracy was 83 per cent. When the additional twelve patients for whom surgery was deemed unnecessary were considered, the sensitivity of sequential Tc-Ga imaging was 50 per cent, the specificity was 78 per cent, and the accuracy was 62 per cent, as compared with a sensitivity of 83 per cent, a specificity of 94 per cent, and an accuracy of 88 per cent with the indium-labeled-leukocyte method. In patients with a prosthesis the indium-labeled-leukocyte image was 94 per cent accurate, compared with 75 per cent accuracy for sequential Tc-Ga imaging. Statistical analysis of these data demonstrated that the indium-labeled-leukocyte technique was superior to sequential Tc-Ga imaging in detecting areas of low-grade musculoskeletal sepsis

  18. Comparison of the electronic structure of amorphous versus crystalline indium gallium zinc oxide semiconductor: structure, tail states and strain effects

    Science.gov (United States)

    de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

    2015-11-01

    We study the evolution of the structural and electronic properties of crystalline indium gallium zinc oxide (IGZO) upon amorphization by first-principles calculation. The bottom of the conduction band (BCB) is found to be constituted of a pseudo-band of molecular orbitals that resonate at the same energy on different atomic sites. They display a bonding character between the s orbitals of the metal sites and an anti-bonding character arising from the interaction between the oxygen and metal s orbitals. The energy level of the BCB shifts upon breaking of the crystal symmetry during the amorphization process, which may be attributed to the reduction of the coordination of the cationic centers. The top of the valence band (TVB) is constructed from anti-bonding oxygen p orbitals. In the amorphous state, they have random orientation, in contrast to the crystalline state. This results in the appearance of localized tail states in the forbidden gap above the TVB. Zinc is found to play a predominant role in the generation of these tail states, while gallium hinders their formation. Last, we study the dependence of the fundamental gap and effective mass of IGZO on mechanical strain. The variation of the gap under strain arises from the enhancement of the anti-bonding interaction in the BCB due to the modification of the length of the oxygen-metal bonds and/or to a variation of the cation coordination. This effect is less pronounced for the amorphous material compared to the crystalline material, making amorphous IGZO a semiconductor of choice for flexible electronics. Finally, the effective mass is found to increase upon strain, in contrast to regular materials. This counterintuitive variation is due to the reduction of the electrostatic shielding of the cationic centers by oxygen, leading to an increase of the overlaps between the metal orbitals at the origin of the delocalization of the BCB. For the range of strain typically met in flexible electronics, the induced

  19. Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films

    International Nuclear Information System (INIS)

    The electrical and optical properties of direct current and radio frequency (RF) sputtered amorphous indium gallium zinc oxide (a-IGZO) films are compared. It is found that the RF sputtered a-IGZO films have better stoichiometry (In:Ga:Zn:O = 1:1:1:2.5–3.0), lower electrical conductivity (σ < 8 S/cm), higher refractive index (n = 1.9–2.0) and larger band gap (Eg = 3.02–3.29 eV), and show less shift of Fermi level (△ EF ∼ 0.26 eV) and increased concentration of electrons (△ Ne ∼ 104) in the conduction band with the reduction concentration of oxygen vacancy (VO). Although a-IGZO has intensively been studied for a semiconductor channel material of thin film transistors in next-generation flat panel displays, its fundamental material parameters have not been thoroughly reported. In this work, the work function (φ) of a-IGZO films is tested with the ultraviolet photoelectron spectroscopy. It is found that the φ of a-IGZO films is in the range of 4.0–5.0 eV depending on the VO. - Highlights: ► Amorphous InGaZnO4 (a-IGZO) films were prepared with different sputtering modes. ► Electrical and optical properties of the different films were compared. ► Fermi level (△EF) shift in a-IGZO films were tested by X-ray photoelectron spectroscopy. ► The relation of △EF with the properties of a-IGZO films were discussed. ► Work function was tested by ultraviolet photoelectron spectroscopy

  20. Thin film metallic glass as a diffusion barrier for copper indium gallium selenide solar cell on stainless steel substrate: A feasibility study

    Science.gov (United States)

    Diyatmika, Wahyu; Xue, Lingjun; Lin, Tai-Nan; Chang, Chia-wen; Chu, Jinn P.

    2016-08-01

    The feasibility of using Zr53.5Cu29.1Al6.5Ni10.9 thin-film metallic glass (TFMG) as a diffusion barrier for copper indium gallium selenide (CIGS) solar cells on stainless steel (SS) is investigated. The detrimental Fe diffusion from SS into CIGS is found to be effectively hindered by the introduction of a 70-nm-thick TFMG barrier; the cell performance is thus improved. Compared with the 2.73% of CIGS on bare SS, a higher efficiency of 5.25% is obtained for the cell with the Zr52Cu32Al9Ni7 TFMG barrier.

  1. A 6b 10MS/s current-steering DAC manufactured with amorphous Gallium-Indium-Zinc-Oxide TFTs achieving SFDR > 30dB up to 300kHz

    NARCIS (Netherlands)

    Raiteri, D.; Torricelli, F.; Myny, K.; Nag, M.; Putten, B. van der; Smits, E.; Steudel, S.; Tempelaars, K.; Tripathi, A.K.; Gelinck, G.H.; Roermund, A. van; Cantatore, E.

    2012-01-01

    Amorphous Gallium-Indium-Zinc-Oxide (GIZO or IGZO) has been recently proposed [1] as an interesting semiconductor for manufacturing TFTs because of its mobility (μ∼20cm 2/Vs), superior to other common materials for large-area electronics like organic semiconductors and a-Si (μ∼1cm 2/Vs). The amorpho

  2. Paraffin wax as a diluent for extraction and separation of trivalent gallium, indium, and thallium with 2,6-bis-(1′-phenyl-3′-methyl-5′- oxopyrazole-4′) pyridineacyl

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    A method is proposed for the extraction and separation of trivalent gallium, indium and thallium from their corre-sponding aqueous solutions at 65°C with 2, 6-bis-(l'-phenyl-3'-methyl-5'-oxopyrazole-4') pyridineacyl (H2PMBPPor H2A)using molten paraffin wax as a diluent. The values of pH 1/2 for extraction of gallium, indium and thallium are 2.62, 4.32 and4.93, respectively. Gallium can be extracted by H2PMBPP at a lower acid medium. The effect of solvent and the composi-tion of the extracted species are reported. And the thermodynamic data of the extraction are also obtained.

  3. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Oh, Byung Su [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Display Company, Yongin (Korea, Republic of); Joo, Min-Kyu [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); IMEP-LAHC, Grenoble INP, Minatec, CS 50257, 38016 Grenoble (France); Ahn, Seung-Eon [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin 446-712 (Korea, Republic of)

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  4. Hydrogen Production from Water by Photolysis, Sonolysis and Sonophotolysis with Solid Solutions of Rare Earth, Gallium and Indium Oxides as Heterogeneous Catalysts

    Directory of Open Access Journals (Sweden)

    Marta Penconi

    2015-07-01

    Full Text Available In this work, we present the hydrogen production by photolysis, sonolysis and sonophotolysis of water in the presence of newly synthesized solid solutions of rare earth, gallium and indium oxides playing as catalysts. From the experiments of photolysis, we found that the best photocatalyst is the solid solution Y0.8Ga0.2InO3 doped by sulphur atoms. In experiments of sonolysis, we optimized the rate of hydrogen production by changing the amount of water, adding ethanol and tuning the power of our piezoelectric transducer. Finally, we performed sonolysis and sonophotolysis experiments in the presence of S:Y0.8Ga0.2InO3 finding a promising synergistic effect of UV-visible electromagnetic waves and 38 kHz ultrasound waves in producing H2.

  5. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

    Science.gov (United States)

    Niang, K. M.; Barquinha, P. M. C.; Martins, R. F. P.; Cobb, B.; Powell, M. J.; Flewitt, A. J.

    2016-02-01

    Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 107 s-1. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys. 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed.

  6. Effect of Al2O3 insulator thickness on the structural integrity of amorphous indium-gallium-zinc-oxide based thin film transistors.

    Science.gov (United States)

    Kim, Hak-Jun; Hwang, In-Ju; Kim, Youn-Jea

    2014-12-01

    The current transparent oxide semiconductors (TOSs) technology provides flexibility and high performance. In this study, multi-stack nano-layers of TOSs were designed for three-dimensional analysis of amorphous indium-gallium-zinc-oxide (a-IGZO) based thin film transistors (TFTs). In particular, the effects of torsional and compressive stresses on the nano-sized active layers such as the a-IGZO layer were investigated. Numerical simulations were carried out to investigate the structural integrity of a-IGZO based TFTs with three different thicknesses of the aluminum oxide (Al2O3) insulator (δ = 10, 20, and 30 nm), respectively, using a commercial code, COMSOL Multiphysics. The results are graphically depicted for operating conditions. PMID:25971080

  7. Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment

    Science.gov (United States)

    Kim, Joonwoo; Jeong, Soon Moon; Jeong, Jaewook

    2015-11-01

    We fabricated depletion type, transparent amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) and inverters with an Ar plasma treatment and analyzed their scaling characteristics with channel lengths ranging from 2 to 100 µm. The improvement of the field-effect mobility of a-IGZO TFTs is apparent only for short channel lengths. There is also an unexpected side effect of the Ar plasma treatment, which introduces back-channel interfacial states and induces a positive shift in the threshold voltage of a-IGZO TFTs. The resulting increase in the field-effect mobility and the positive shift in the threshold voltage of each TFT increase the differential gain up to 3 times and the positive shift in the transient point of the transparent inverters.

  8. Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core-shell light-emitting diodes

    Science.gov (United States)

    Gîrgel, Ionut; Edwards, Paul R.; Le Boulbar, Emmanuel; Coulon, Pierre-Marie; Sahonta, Suman-Lata; Allsopp, Duncan W. E.; Martin, Robert W.; Humphreys, Colin J.; Shields, Philip A.

    2016-01-01

    Core-shell indium gallium nitride (InGaN)/gallium nitride (GaN) structures are attractive as light emitters due to the large nonpolar surface of rod-like cores with their longitudinal axis aligned along the c-direction. These facets do not suffer from the quantum-confined Stark effect that limits the thickness of quantum wells and efficiency in conventional light-emitting devices. Understanding InGaN growth on these submicron three-dimensional structures is important to optimize optoelectronic device performance. In this work, the influence of reactor parameters was determined and compared. GaN nanorods (NRs) with both {11-20} a-plane and {10-10} m-plane nonpolar facets were prepared to investigate the impact of metalorganic vapor phase epitaxy reactor parameters on the characteristics of a thick (38 to 85 nm) overgrown InGaN shell. The morphology and optical emission properties of the InGaN layers were investigated by scanning electron microscopy, transmission electron microscopy, and cathodoluminescence hyperspectral imaging. The study reveals that reactor pressure has an important impact on the InN mole fraction on the {10-10} m-plane facets, even at a reduced growth rate. The sample grown at 750°C and 100 mbar had an InN mole fraction of 25% on the {10-10} facets of the NRs.

  9. A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-08-03

    We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-current density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.

  10. Indium and gallium diffusion through zirconia in the TiN/ZrO2/InGaAs stack

    International Nuclear Information System (INIS)

    Angle-resolved X-ray Photoelectron Spectroscopy (ARXPS) was applied to the TiN/ZrO2/InGaAs stack to assess its thermal stability. Through a robust ARXPS analysis, it was possible to observe subtle effects such as the thermally induced diffusion of substrate atomic species (In and Ga) through the dielectric layer. The detailed characterization of the film structure allowed for assessing the depth profiles of the diffused atomic species by means of the scenarios-method. Since the quantification for the amount of diffused material was done at different temperatures, it was possible to obtain an approximate value of the activation energy for the diffusion of indium through zirconia. The result is very similar to the previously reported values for indium diffusion through alumina and through hafnia

  11. The effect of aggregation on the nonlinear optical absorption performance of indium and gallium phthalocyanines in a solution and co-polymer host

    International Nuclear Information System (INIS)

    The nonlinear optical properties (NLO) of Pcs can be modified by substituting different metal atoms into the ring or altering peripheral and axial functionalities. In this study, nonlinear optical absorption properties of tetra-substituted gallium and indium phthalocyanine complexes both in solution and polymeric film have been investigated by open aperture Z-scan measurements with nanosecond pulses at 532 nm. All investigated compounds exhibited reverse saturable absorption for both solution and film experiments. The investigated compounds in the solution showed better nonlinear optical absorption properties than polymeric films. The observed nonlinear optical absorption differences depending on the aggregation are discussed using the ultrafast dynamics and decay processes of excited states found from femtosecond pump-probe spectroscopy with white light continuum experiments. Highlights: ► The effect of aggregation on the nonlinear absorption and the excited state lifetimes were studied. ► UV–Vis absorption spectra revealed that organization of investigated molecules in PMMA films show H-aggregation. ► Fast transitions (intermolecular energy transfers) in PMMA films were observed. ► Intermolecular energy transfer due to aggregation reduces transition to triplet levels. ► Aggregation reduces RSA signal observed in OA Z-scan experiments for the samples in a host PMMA polymer matrix

  12. Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

    Science.gov (United States)

    Chun, Minkyu; Um, Jae Gwang; Park, Min Sang; Chowdhury, Md Delwar Hossain; Jang, Jin

    2016-07-01

    We report the abnormal behavior of the threshold voltage (VTH) shift under positive bias Temperature stress (PBTS) and negative bias temperature stress (NBTS) at top/bottom gate in dual gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). It is found that the PBTS at top gate shows negative transfer shift and NBTS shows positive transfer shift for both top and bottom gate sweep. The shift of bottom/top gate sweep is dominated by top gate bias (VTG), while bottom gate bias (VBG) is less effect than VTG. The X-ray photoelectron spectroscopy (XPS) depth profile provides the evidence of In metal diffusion to the top SiO2/a-IGZO and also the existence of large amount of In+ under positive top gate bias around top interfaces, thus negative transfer shift is observed. On the other hand, the formation of OH- at top interfaces under the stress of negative top gate bias shows negative transfer shift. The domination of VTG both on bottom/top gate sweep after PBTS/NBTS is obviously occurred due to thin active layer.

  13. High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C

    Science.gov (United States)

    Kim, Won-Gi; Tak, Young Jun; Du Ahn, Byung; Jung, Tae Soo; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-03-01

    We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm2/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites.

  14. High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF{sub 4}/Ar plasma

    Energy Technology Data Exchange (ETDEWEB)

    Joo, Young-Hee; Kim, Chang-Il

    2015-05-29

    We investigated the etching process of indium-gallium-zinc oxide (IGZO) thin films in an inductively coupled plasma system. The dry etching characteristics of the IGZO thin films were studied by varying the CF{sub 4}/Ar gas mixing ratio, RF power, DC-bias voltage, and process pressure. We determined the following optimized process conditions: an RF power of 700 W, a DC-bias voltage of − 150 V, and a process pressure of 2 Pa. A maximum etch rate of 25.63 nm/min for the IGZO thin films was achieved in a plasma with CF{sub 4}/Ar(= 25:75), and the selectivity of IGZO to Al and TiN was found to be 1.3 and 0.7, respectively. We determined the ionic composition of the CF{sub 4}/Ar plasma using optical emission spectroscopy. Analysis of chemical reactions at the IGZO thin film surfaces was performed using X-ray photoelectron spectroscopy. - Highlights: • IGZO thin film was etched by CF{sub 4}/Ar plasma as a function of gas mixing ratio. • IGZO bonds were broken Ar{sup +} sputtering and then reacted with the C-F{sub x} radicals. • The physical sputtering is dominant in etch control compared with chemical etching.

  15. Improvement in reliability of amorphous indium-gallium-zinc oxide thin-film transistors with Teflon/SiO2 bilayer passivation under gate bias stress

    Science.gov (United States)

    Fan, Ching-Lin; Tseng, Fan-Ping; Li, Bo-Jyun; Lin, Yu-Zuo; Wang, Shea-Jue; Lee, Win-Der; Huang, Bohr-Ran

    2016-02-01

    The reliability of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with Teflon/SiO2 bilayer passivation prepared under positive and negative gate bias stresses (PGBS and NGBS, respectively) was investigated. Heavier electrical degradation was observed under PGBS than under NGBS, indicating that the environmental effects under PGBS are more evident than those under NGBS. The device with bilayer passivation under PGBS shows two-step degradation. The positive threshold voltage shifts during the initial stressing period (before 500 s), owing to the charges trapped in the gate insulator or at the gate insulator/a-IGZO active layer interface. The negative threshold voltage shift accompanies the increase in subthreshold swing (SS) for the continuous stressing period (after 500 s) owing to H2O molecules from ambience diffused within the a-IGZO TFTs. It is believed that Teflon/SiO2 bilayer passivation can effectively improve the reliability of the a-IGZO TFTs without passivation even though the devices are stressed under gate bias.

  16. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    Science.gov (United States)

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin

    2015-12-01

    We have studied the effect of top gate bias (VTG) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm2 intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the VTG from -15 to +15 V. By changing VTG from negative to positive, the Fermi level (EF) shifts toward conduction band edge (EC), which substantially controls the conversion of neutral vacancy to charged one (VO → VO+/VO2+ + e-/2e-), peroxide (O22-) formation or conversion of ionized interstitial (Oi2-) to neutral interstitial (Oi), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows -2.7 V shift at VTG = -15 V, which gradually decreases to -0.42 V shift at VTG = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (VO+/VO2+/O22-/Oi) and/or hole trapping in the a-IGZO /interfaces.

  17. Properties of c-axis-aligned crystalline indium-gallium-zinc oxide field-effect transistors fabricated through a tapered-trench gate process

    Science.gov (United States)

    Asami, Yoshinobu; Kurata, Motomu; Okazaki, Yutaka; Higa, Eiji; Matsubayashi, Daisuke; Okamoto, Satoru; Sasagawa, Shinya; Moriwaka, Tomoaki; Kakehata, Tetsuya; Yakubo, Yuto; Kato, Kiyoshi; Hamada, Takashi; Sakakura, Masayuki; Hayakawa, Masahiko; Yamazaki, Shunpei

    2016-04-01

    To achieve both low power consumption and high-speed operation, we fabricated c-axis-aligned crystalline indium-gallium-zinc oxide (CAAC-IGZO) field-effect transistors (FETs) with In-rich IGZO and common IGZO (\\text{In}:\\text{Ga}:\\text{Zn} = 1:1:1 in atomic ratio) active layers through a simple process using trench gates, and evaluated their characteristics. The results confirm that 60-nm-node IGZO FETs fabricated through a 450 °C process show an extremely low off-state current below the detection limit (at most 2 × 10-16 A) even at a measurement temperature of 150 °C. The results also reveal that the FETs with the In-rich IGZO active layer show a higher on-state current than those with the common IGZO active layer and have excellent frequency characteristics with a cutoff frequency and a maximum oscillation frequency of up to 20 and 6 GHz, respectively. Thus, we demonstrated that CAAC-IGZO FETs with trench gates are promising for achieving both low power consumption and high-speed operation.

  18. Indium-gallium-zinc-oxide layer used to increase light transmittance efficiency of adhesive layer for stacked-type multijunction solar cells

    Science.gov (United States)

    Yoshidomi, Shinya; Kimura, Shunsuke; Hasumi, Masahiko; Sameshima, Toshiyuki

    2015-11-01

    We report the increase in transmittance efficiency of the intermediate layer for multijunction solar cells caused by the indium-gallium-zinc-oxide (IGZO) layer used as the antireflection layer. Si substrates coated with a 200-nm-thick IGZO layer with a refractive index of 1.85 were prepared. The resistivity of the IGZO layer was increased from 0.0069 (as-deposited) to 0.032 Ω cm by heat treatment at 350 °C for 1 h to prevent free-carrier optical absorption. Samples with the Si/IGZO/adhesive/IGZO/Si structure were fabricated. The average transmissivity for wavelengths between 1200 and 1600 nm was 49%, which was close to 55% of single-crystal silicon substrates. A high effective transmittance efficiency of 89% was experimentally achieved. The numerical calculation showed in an effective transmittance efficiency of 99% for 170-nm-thick antireflection layers with a resistivity of 0.6 Ω cm and a refractive index of 2.1.

  19. Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y2O3 passivation

    International Nuclear Information System (INIS)

    We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y2O3) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y2O3 passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO3-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water

  20. Influence of addition of indium and of post-annealing on structural, electrical and optical properties of gallium-doped zinc oxide thin films deposited by direct-current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Pham, Duy Phong [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Nguyen, Huu Truong [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Phan, Bach Thang [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Faculty of Materials Science, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Hoang, Van Dung [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Maenosono, Shinya [School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Tran, Cao Vinh, E-mail: tcvinh@hcmus.edu.vn [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam)

    2015-05-29

    In this study, both gallium-doped zinc oxide (GZO) and indium-added gallium-doped zinc oxide (IGZO) thin films were deposited on commercial glasses by magnetron dc-sputtering in argon atmosphere. The crystal structure, electrical conductivity and optical transmission of as-deposited as well as post-annealed thin films of both GZO and IGZO were investigated for comparison. A small amount of indium introduced into GZO thin films had improved their polycrystalline structure and increased their electrical conductivity by over 29%. All obtained GZO and IGZO thin films have strong [002] crystalline direction, a characteristic orientation of ZnO thin films. Although post-annealed in air at high temperatures up to 500 °C, IGZO thin films still had very low sheet resistance of 6.6 Ω/□. Furthermore, they had very high optical transmission of over 80% in both visible and near-infrared regions. - Highlights: • Doping 0.1 at.% indium enhanced crystalline, electrical properties of GZO films. • The mobility of IGZO films was 25% higher than that of GZO films. • The IGZO films will be potential materials for transparent conducting electrodes.

  1. Influence of indium/gallium gradients on the Cu(In,Ga)Se{sub 2} devices deposited by the co-evaporation without recrystallisation

    Energy Technology Data Exchange (ETDEWEB)

    Drobiazg, Tomasz, E-mail: drobiazg@if.pw.edu.pl [Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS-UMR 6502, 2, rue de la Houssinière, BP 32229, F-44322 Nantes Cedex 3 (France); Arzel, Ludovic [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS-UMR 6502, 2, rue de la Houssinière, BP 32229, F-44322 Nantes Cedex 3 (France); Dönmez, Adem [Faculty of Science, Department of Physics, Muğla Sıtkı Koçman University, 48000, Muğla (Turkey); Zabierowski, Paweł [Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Barreau, Nicolas [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS-UMR 6502, 2, rue de la Houssinière, BP 32229, F-44322 Nantes Cedex 3 (France)

    2015-05-01

    In the laboratory scale, cells based on Cu(In,Ga)Se{sub 2} grown by the 3-stage process reach the best performance because of high open-circuit voltage and short-circuit current (V{sub OC}-J{sub SC}) combination. One of the reasons for that could be the V-shaped gradient of Ga to In atomic ratio throughout the Cu(In,Ga)Se{sub 2} layer, which results from large differences in the diffusion coefficients of In and Ga. The location of the lowest Ga-content in the Cu(In,Ga)Se{sub 2} (i.e. Ga notch), also corresponds to the Cu-poor to Cu-rich transition during the 2nd stage. Since this transition is associated to a phenomenon of recrystallisation, the arising question is whether high V{sub OC}-J{sub SC} combination is effectively inherent to V-shaped gradient or to recrystallisation. In our work we attempt to eliminate the influence of recrystallisation to exclusively study the influence of Ga/In gradients. Our approach was to co-evaporate samples by the one-step process with different gradients by the continuous modification of In and Ga fluxes during the deposition and keeping constant that of Cu in a way that its ratio to group III elements was 0.9. With this method, we could obtain a set of Cu(In,Ga)Se{sub 2} layers either free of gradient, with linear gradient (i.e. no notch) or V-shaped gradient with notch at a different distance from the Cu(In,Ga)Se{sub 2} surface. We observe that depending on the presence of notch in conduction band or the position of notch it is possible to modify the impact of secondary barriers on current-voltage characteristics. - Highlights: • Investigation of the indium and gallium gradients apart from the recrystallisation • Short-circuit current and open-circuit voltage benefit from the band gap gradient. • Constant band gap gradient decreases the influence of secondary barriers. • With the presence of gallium notch the secondary barriers are more pronounced.

  2. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    International Nuclear Information System (INIS)

    We have studied the effect of top gate bias (VTG) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm2 intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the VTG from −15 to +15 V. By changing VTG from negative to positive, the Fermi level (EF) shifts toward conduction band edge (EC), which substantially controls the conversion of neutral vacancy to charged one (VO → VO+/VO2+ + e−/2e−), peroxide (O22−) formation or conversion of ionized interstitial (Oi2−) to neutral interstitial (Oi), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows −2.7 V shift at VTG = −15 V, which gradually decreases to −0.42 V shift at VTG = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (VO+/VO2+/O22−/Oi) and/or hole trapping in the a-IGZO /interfaces

  3. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

    2015-12-07

    We have studied the effect of top gate bias (V{sub TG}) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm{sup 2} intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the V{sub TG} from −15 to +15 V. By changing V{sub TG} from negative to positive, the Fermi level (E{sub F}) shifts toward conduction band edge (E{sub C}), which substantially controls the conversion of neutral vacancy to charged one (V{sub O} → V{sub O}{sup +}/V{sub O}{sup 2+} + e{sup −}/2e{sup −}), peroxide (O{sub 2}{sup 2−}) formation or conversion of ionized interstitial (O{sub i}{sup 2−}) to neutral interstitial (O{sub i}), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows −2.7 V shift at V{sub TG} = −15 V, which gradually decreases to −0.42 V shift at V{sub TG} = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (V{sub O}{sup +}/V{sub O}{sup 2+}/O{sub 2}{sup 2−}/O{sub i}) and/or hole trapping in the a-IGZO /interfaces.

  4. Non-invasive Drosophila ECG recording by using eutectic gallium-indium alloy electrode: a feasible tool for future research on the molecular mechanisms involved in cardiac arrhythmia.

    Directory of Open Access Journals (Sweden)

    Po-Hung Kuo

    Full Text Available BACKGROUND: Drosophila heart tube is a feasible model for cardiac physiological research. However, obtaining Drosophila electrocardiograms (ECGs is difficult, due to the weak signals and limited contact area to apply electrodes. This paper presents a non-invasive Gallium-Indium (GaIn based recording system for Drosophila ECG measurement, providing the heart rate and heartbeat features to be observed. This novel, high-signal-quality system prolongs the recording time of insect ECGs, and provides a feasible platform for research on the molecular mechanisms involved in cardiovascular diseases. METHODS: In this study, two types of electrode, tungsten needle probes and GaIn electrodes, were used respectively to noiselessly conduct invasive and noninvasive ECG recordings of Drosophila. To further analyze electrode properties, circuit models were established and simulated. By using electromagnetic shielded heart signal acquiring system, consisted of analog amplification and digital filtering, the ECG signals of three phenotypes that have different heart functions were recorded without dissection. RESULTS AND DISCUSSION: The ECG waveforms of different phenotypes of Drosophila recorded invasively and repeatedly with n value (n>5 performed obvious difference in heart rate. In long period ECG recordings, non-invasive method implemented by GaIn electrodes acts relatively stable in both amplitude and period. To analyze GaIn electrode, the correctness of GaIn electrode model established by this paper was validated, presenting accuracy, stability, and reliability. CONCLUSIONS: Noninvasive ECG recording by GaIn electrodes was presented for recording Drosophila pupae ECG signals within a limited contact area and signal strength. Thus, the observation of ECG changes in normal and SERCA-depleted Drosophila over an extended period is feasible. This method prolongs insect survival time while conserving major ECG features, and provides a platform for

  5. Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jun Tae; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan, E-mail: khs3297@cnu.ac.kr, E-mail: drlife@kookmin.ac.kr [School of Electrical Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Park, Jozeph [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); Ahn, Byung Du [School of Electrical and Electronic Engineering, Yonsei University, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Kim, Hyun-Suk, E-mail: khs3297@cnu.ac.kr, E-mail: drlife@kookmin.ac.kr [Department of Materials Science and Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of)

    2015-03-23

    The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.

  6. Colour reactions of aluminium, titanium and other elements in organo-aqueous media containing acetic acid

    International Nuclear Information System (INIS)

    Colour reactions of titanium, aluminium, gallium, and indium in water-organic media, which also contain organic acids (acetic, formic, or their mixtures with acetone and propanol) are considered with the aim of using them in photometric methods for determining these elements. The reactants used were 2.7-bisazosubstituted components of chromotropic acid. It was established that the rate of development of colouring, the contrast and selectivity increase in water-organic media as compared with aqueous solutions. A favourable effect of acetic acid on the development of colour reactions is noted

  7. Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control.

    Science.gov (United States)

    Sarkar, Sujoy; Sampath, S

    2016-05-11

    A ternary, ionically conducting, deep eutectic solvent based on acetamide, urea and gallium nitrate is reported for the electrodeposition of gallium nitride/gallium indium nitride under ambient conditions; blue and white light emitting photoluminescent deposits are obtained under potential control. PMID:27074315

  8. Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

    International Nuclear Information System (INIS)

    We have studied the effect of long time post-fabrication annealing on negative bias illumination stress (NBIS) of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Annealing for 100 h at 250 °C increased the field effect mobility from 14.7 cm2/V s to 17.9 cm2/V s and reduced the NBIS instability remarkably. Using X-ray photoelectron spectroscopy, the oxygen vacancy and OH were found to exist at the interfaces of a-IGZO with top and bottom SiO2. Long time annealing helps to decrease the vacancy concentration and increase the metal-oxygen bonds at the interfaces; this leads to increase in the free carrier concentrations in a-IGZO and field-effect mobility. X-ray reflectivity measurement indicated the increment of a-IGZO film density of 5.63 g cm−3 to 5.83 g cm−3 (3.4% increase) by 100 h annealing at 250 °C. The increase in film density reveals the decrease of O vacancy concentration and reduction of weak metal-oxygen bonds in a-IGZO, which substantially helps to improve the NBIS stability

  9. High-performance low-cost back-channel-etch amorphous gallium-indium-zinc oxide thin-film transistors by curing and passivation of the damaged back channel.

    Science.gov (United States)

    Park, Jae Chul; Ahn, Seung-Eon; Lee, Ho-Nyeon

    2013-12-11

    High-performance, low-cost amorphous gallium-indium-zinc oxide (a-GIZO) thin-film-transistor (TFT) technology is required for the next generation of active-matrix organic light-emitting diodes. A back-channel-etch structure is the most appropriate device structure for high-performance, low-cost a-GIZO TFT technology. However, channel damage due to source/drain etching and passivation-layer deposition has been a critical issue. To solve this problem, the present work focuses on overall back-channel processes, such as back-channel N2O plasma treatment, SiOx passivation deposition, and final thermal annealing. This work has revealed the dependence of a-GIZO TFT characteristics on the N2O plasma radio-frequency (RF) power and frequency, the SiH4 flow rate in the SiOx deposition process, and the final annealing temperature. On the basis of these results, a high-performance a-GIZO TFT with a field-effect mobility of 35.7 cm(2) V(-1) s(-1), a subthreshold swing of 185 mV dec(-1), a switching ratio exceeding 10(7), and a satisfactory reliability was successfully fabricated. The technology developed in this work can be realized using the existing facilities of active-matrix liquid-crystal display industries. PMID:24221957

  10. Development trend and direction of application of indium gallium zinc oxide TFT-LCD to IGZO Technology%金属氧化物(IGZO)TFT-LCD的工艺技术发展趋势及方向

    Institute of Scientific and Technical Information of China (English)

    黄伟剑

    2016-01-01

    铟镓锌氧化物IGZO(indium gallium zinc oxide)是用于新一代薄膜液晶显示屏薄膜晶体管沟道层的材料.研究铟镓锌金属氧化物IGZO在TFT-LCD制造应用中的工艺技术发展趋势及方向.分析了铟镓锌氧化物IGZO在TFT-LCD中的作用和使用现状,分析了TFT-LCD液晶显示器的功能特性和技术特点.结合金属氧化物IGZO的应用,阐述了未来TFT-LCD液晶显示器发展的趋势和方向,TFT-LCD的工艺技术将向着高集成度,高环保性、高分辨率、高水平垂直角、高显示亮度、长使用寿命周期等方向发展,随着大面积低温多晶硅TFT-LCD的使用,TFT-LCD发展空间广阔,将迅速成为当前和未来液晶显示器的主流产品.

  11. Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

    Science.gov (United States)

    Kim, Eungtaek; Kim, Choong-Ki; Lee, Myung Keun; Bang, Tewook; Choi, Yang-Kyu; Park, Sang-Hee Ko; Choi, Kyung Cheol

    2016-05-01

    We investigated the positive-bias stress (PBS) instability of thin film transistors (TFTs) composed of different types of first-gate insulators, which serve as a protection layer of the active surface. Two different deposition methods, i.e., the thermal atomic layer deposition (THALD) and plasma-enhanced ALD (PEALD) of Al2O3, were applied for the deposition of the first GI. When THALD was used to deposit the GI, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs showed superior stability characteristics under PBS. For example, the threshold voltage shift (ΔVth) was 0 V even after a PBS time (tstress) of 3000 s under a gate voltage (VG) condition of 5 V (with an electrical field of 1.25 MV/cm). On the other hand, when the first GI was deposited by PEALD, the ΔVth value of a-IGZO TFTs was 0.82 V after undergoing an identical amount of PBS. In order to interpret the disparate ΔVth values resulting from PBS quantitatively, the average oxide charge trap density (NT) in the GI and its spatial distribution were investigated through low-frequency noise characterizations. A higher NT resulted during in the PEALD type GI than in the THALD case. Specifically, the PEALD process on a-IGZO layer surface led to an increasing trend of NT near the GI/a-IGZO interface compared to bulk GI owing to oxygen plasma damage on the a-IGZO surface.

  12. Quantitative bone gallium scintigraphy in osteomyelitis

    International Nuclear Information System (INIS)

    Gallium imaging offers many practical advantages over indium-111-labeled leukocyte imaging, and calculating quantitative ratios in addition to performing the routine bone-gallium images allows accurate and easy evaluation of patients with suspected osteomyelitis. To add objectivity and improve the accuracy and confidence in diagnosis of osteomyelitis, quantitative comparison of abnormalities seen on bone scans and gallium scans was performed. One hundred and ten adult patients with 126 sites of suspected osteomyelitis were evaluated and categorized by gallium-to-bone ratios, gallium-to-background ratios, and spatial incongruency of gallium and bone activity. Combined evaluation using these criteria gave a 70% sensitivity and 93% specificity for the diagnosis of osteomyelitis. (orig.)

  13. Effect of gallium,aluminium,and chromium on silica supported V-Mg-O catalysts during oxidative dehydrogenation of propane:Kinetic study

    Institute of Scientific and Technical Information of China (English)

    B.Ravi Kumar; Rajeev Kumar

    2008-01-01

    The oxidative dehydrogenation(ODH)of propane was conducted on gallium,aluminum.and chromium doped Si30VMgO catalysts.On doping,the concentrations of the phases responsible for the activity and selectivity increased in their concentrations.The reaction studies were conducted in a tubular steel reactor at temperatures of 753,783,813.and 843 K and atmospheric pressure.The total flow rates of the feed were chosen as 30,40,50,and 60 ml/min.The propane to oxygen ratios were chosen at 1:1,2:1,and 3:1,respectively.The effect of various dopants on the activity and selectivity of the catalysts was studied.Deactivation studies were conducted over all the catalysts.The kinetic data were analyzed in terms of power law models and Langmuir-Hinshelwood(LH)models.The kinetic data results were analyzed by comparing the effect of dopants.Statistical model discrimination was done for the proposed models.AIC and BIC criteria were used for discrimination of the models.

  14. Improving the efficiency of copper indium gallium (Di-selenide (CIGS solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    Directory of Open Access Journals (Sweden)

    M. Burghoorn

    2014-12-01

    Full Text Available Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (Jsc and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-selenide (CIGS solar cells is also optically advantageous. Here, we experimentally demonstrate that the Jsc and efficiency of CIGS solar cells with an absorber layer thickness (dCIGS of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (nresist = 1.792 vs. nAZO = 1.913 at 633 nm to avoid large optical losses at the resist-AZO interface. On average, Jsc increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%. No trend towards a larger relative increase in Jsc with decreasing dCIGS was observed. Ergo, the increase in Jsc can be fully explained by the reduction in reflection, and we did not observe any increase in Jsc based on an increased photon path length.

  15. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Burghoorn, M.; Kniknie, B.; Deelen, J. van; Ee, R. van [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Xu, M. [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Delft University of Technology, Optics Group, Van der Waalsweg 8, 2628 CH, Delft (Netherlands); Vroon, Z. [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); Zuyd Hogeschool, Nieuw Eyckholt 300, 6419 DJ, Heerlen (Netherlands); Belt, R. van de [Kriya Materials BV, Urmonderbaan 22, 6167 RD, Geleen (Netherlands); Buskens, P., E-mail: pascal.buskens@tno.nl, E-mail: buskens@dwi.rwth-aachen.de [The Netherlands Organisation for Applied Scientific Research (TNO), De Rondom 1, 5612 AP, Eindhoven (Netherlands); DWI – Leibniz Institute for Interactive Materials, Forckenbeckstrasse 50, 52056, Aachen (Germany)

    2014-12-15

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (J{sub sc}) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the J{sub sc} and efficiency of CIGS solar cells with an absorber layer thickness (d{sub CIGS}) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (n{sub resist} = 1.792 vs. n{sub AZO} = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, J{sub sc} increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in J{sub sc} with decreasing d{sub CIGS} was observed. Ergo, the increase in J{sub sc} can be fully explained by the reduction in reflection, and we did not observe any increase in J{sub sc} based on an increased photon path length.

  16. Comparison of gallium-67 versus indium-111 monoclonal antibody (96.5, ZME-018) in detection of human melanoma in athymic mice

    International Nuclear Information System (INIS)

    We compared the biodistribution of two radiolabeled, whole, tumor selective monoclonal antibodies [( 111In]96.5, [111In]ZME-018) to 67Ga in nude mice bearing a human melanoma known to express p97 antigen. Localization of gallium was determined 48 hr following i.v. injection. Localization of the radiolabeled antibodies was determined at 3 days and 7 days following i.v. injection. All agents showed more or less similar absolute tumor uptake which varied between 22% and 36% of the injected dose per gram of tumor. Only the tumor uptake of [111In]96.5 antibody at 7 days was significantly lower than the 67Ga uptake at 48 hr. However, uptake in normal tissues was generally higher for both antibodies at 3 and 7 days than for 67Ga uptake at 48 hr. Therefore, the tumor-to-blood ratio for 67Ga was tenfold higher than that for either antibody, the tumor-to-muscle ratio was twofold higher. Bone was the only organ in which the tumor-to-organ ratio was consistently higher with radiolabeled antibody than with 67Ga. The tumor-to-liver and tumor-to-intestine ratios were comparable. Localization of the two tumor selective antibodies was greater than a nonspecific control antibody [( 111In]CEA) and change in specific activity from 0.17 mCi/mg to 3.3 mCi/mg did not influence localization. From these animal data it may be anticipated that tumor imaging with [111In]96.5 or [111In]ZME-018 will not be superior to imaging with 67Ga for detection of melanoma

  17. 射频磁控溅射低温制备非晶铟镓锌氧薄膜晶体管%Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor at Low Temperature by RF Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    信恩龙; 李喜峰; 陈龙龙; 石继锋; 李春亚; 张建华

    2012-01-01

    The indium gallium zinc oxide (IGZO) thin films were fabricated by RF magnetron sputtering at room temperature in this paper. The crystal structure, surface morphology, and optical electrical of the IGZO films were investigated by X-ray diffraction ( XRD) , atom force microscopy (AFM) , and photometry, respectively. The results revealed that the IGZO film was amorphous, the surface of the films was uniform and smooth. A good optical transmittance of over 80% was obtained in the visible light. The IGZO thin film transistors were successfully fabricated at low temperature ( < 200℃ ) using the room temperature sputtering IGZO thin film as the active layer. The field effect mobility of a-IGZO TFT was larger than 6. 0 cm2 · V-1·s-1. The device's on/off ratio was 10~7, threshold voltage was 1.2 V and subthreshold voltage swing is 0.9 V/ dec. Constant bias stress testing showed that the a-IGZO TFT threshold voltage exhibited positive shifts as time increased.%利用射频磁控溅射技术室温制备了铟镓锌氧(IGZO)薄膜,采用X射线衍射(XRD)表征薄膜的晶体结构,原子力显微镜(AFM)观察其表面形貌,分光光度计测量其透光率.结果表明:室温制备的IGZO薄膜为非晶态且薄膜表面均匀平整,可见光透射率大于80%.将室温制备的IGZO薄膜作为有源层,在低温(<200℃)条件下成功地制备了铟镓锌氧薄膜晶体管(a-IGZO TFT),获得的a-IGZO-TFT器件的场效应迁移率大于6.0cm2·V-1·s-1,开关比约为107,阈值电压为1.2V,亚阈值摆蝠(S)约为0.9 V/dec,偏压应力测试a-IGZO TFT阈值电压随时间向右漂移.

  18. Characterisation of Ga-coated and Ga-brazed aluminium

    Energy Technology Data Exchange (ETDEWEB)

    Ferchaud, E. [Universite de Nantes, Polytech' Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech' Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech' Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

    2012-05-15

    This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

  19. 氧分压对铟镓锌氧薄膜晶体管性能影响%Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor

    Institute of Scientific and Technical Information of China (English)

    孙建明; 周婷婷; 任庆荣; 胡合合; 陈宁; 宁策; 王路; 刘文渠; 李东升

    2016-01-01

    采用标准的液晶显示屏基板制备工艺制备出铟镓锌氧薄膜晶体管(IGZO-TFT),通过调节 IGZO 薄膜工艺中氧分压,研究不同氧分压对TFT器件电学性能的影响.实验结果表明,所有器件都展现出良好的电学特性,随着氧分压从10%增加到50%,TFT的阈值电压由0.5 V增加到2.2 V,而亚阈值摆幅没有发生变化.在栅极施加30 V偏压3600 s后,随着氧分压的增加,阈值电压向正向的漂移量由1 V增加到9 V.经过分析得出高氧分压的 IGZO-TFT器件中载流子浓度低,建立相同导电能力的沟道时所需要栅极电压会更大,阈值电压会增加.而在金属-绝缘层-半导体(MIS)结构中低载流子浓度会导致有源层能带弯曲的部分包含更多与电子陷阱相同的能态,栅介质层(GI)会俘获更多的电子,造成阈值电压漂移量较大的现象.%Indium gallium zinc oxide thin film transistors (IGZO-TFT)were fabricated with the stand-ard process of TFT-LCD arrays substrate.The effects of different oxygen partial pressure on IGZO-TFT performance were investigated by adj usting the oxygen partial pressure in IGZO film process.All devices showed good electrical properties.The threshold voltage of TFT was increased from 0.5 V to 2.2 V as the oxygen partial pressure was increased from 10% to 50%,whereas the sub-threshold swing had not changed.Applying a positive gate bias of 30 V for 3 600 s,with the increase of the oxy-gen partial pressure,the positive shift of threshold voltage of IGZO-TFT was increased from 1 V to 9 V.The carrier concentration in TFT with higher oxygen partial pressure is lower.So it requires high-er gate voltage for building the channel with the same conductive capability,and therefore the thresh-old voltage will be higher.In the Metal-Insulator-Semiconductor (MIS)structure,the lower carrier concentration leads electron accumulation layer to be thicker.There will be more energy states in band bending part of active layer which

  20. Preparation of gallium-68 radiopharmaceuticals for positron tomography. Progress report, November 1, 1983-May 31, 1986

    International Nuclear Information System (INIS)

    The work described in this paper centers on the development and assessment of an improved germanium-68/gallium-68 generator, the testing and evaluation of simple germanium/gallium compounds for use with PET, and on methods of attaching gallium and indium to proteins for use with PET as well as indium-111 and conventional images. This work has expanded to use this technology with monoclonal antibodies. We are also studying the mechanisms and stability of binding of these metals to these modified proteins. The syntheses and assessment of new ligands, specifically aimed at measurement of myocardial and brain blood flow are also described. 7 figs., 11 tabs

  1. Gallium Arsenide

    Science.gov (United States)

    Brozel, Mike

    The history of gallium arsenide is complicated because the technology required to produce GaAs devices has been fraught with problems associated with the material itself and with difficulties in its fabrication. Thus, for many years, GaAs was labelled as "the semiconductor of the future, and it will always be that way." Recently, however, advances in compact-disc (CD) technology, fibre-optic communications and mobile telephony have boosted investment in GaAs research and development. Consequently, there have been advances in materials and fabrication technology and, as a result, GaAs devices now enjoy stable niche markets.

  2. 高迁移率非晶铟镓锌氧化物薄膜晶体管的制备与特性研究%The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistors∗

    Institute of Scientific and Technical Information of China (English)

    李帅帅; 梁朝旭; 王雪霞; 李延辉; 宋淑梅; 辛艳青; 杨田林†

    2013-01-01

      由于铟镓锌氧化物(IGZO)薄膜具有高迁移率和高透过率的特点,它作为有源层被广泛的应用于薄膜晶体管(TFT).本文利用磁控溅射方法制备了TFT的有源层IGZO和源漏电极,用简单低成本的掩膜法控制沟道的尺寸,制备了具有高迁移率、底栅结构的n型非晶铟镓锌氧化物薄膜晶体管(IGZO-TFT).利用X射线衍射仪(XRD)和紫外可见光分光光度计分别测试了IGZO薄膜的衍射图谱和透过率图谱,研究了IGZO薄膜的结构和光学特性.通过测试IGZO-TFT的输出特性和转移特性曲线,讨论了IGZO有源层厚度对IGZO-TFT特性的影响.制备的IGZO-TFT器件的场效应迁移率高达15.6 cm2·V−1·s−1,开关比高于107.%Indium gallium zinc oxide (IGZO) is widely used in thin-film transistors (TFT) as an active layer due to its high mobility and transmittance. The amorphous n-type indium gallium zinc oxide thin-film transistors (IGZO-TFT) of bottom gate with high mobility were prepared, the active layer, source and drain electrode of the TFT were prepared by using magnetron sputtering method, and a low cost mask was used to control the size of the channel. The diffraction pattern and transmittance spectrum were measured by using X-ray diffraction and ultraviolet–visible spectrophotometer, respectively. The structural and optical properties of the IGZO thin film were studied. The dependence of active layer thickness on the performance was analyzed by testing the output characteristics and transfer property of IGZO-TFT. The field effect mobility of the IGZO-TFT reaches 15.6 cm2·V−1·s−1, and the on/off ratio is higher than 107.

  3. 铜-钼源漏电极对非晶氧化铟镓锌薄膜晶体管性能的改善∗%Improved p erformance of the amorphous indium-gallium-zinc oxide thin film transistor with Cu-Mo source/drain electro de

    Institute of Scientific and Technical Information of China (English)

    宁洪龙; 王磊; 兰林锋; 彭俊彪; 胡诗犇; 朱峰; 姚日晖; 徐苗; 邹建华; 陶洪; 徐瑞霞; 徐华

    2015-01-01

    Copper is an alternative material for aluminum electrode to meet the stringent requirement for high mobility and low resistance-capacitance (RC) delay of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) for next generation of display technology due to its intrinsic high conductivity. However, low bonding strength between copper layer and insulator/glass and easy diffusion into active layer restrict its application in the field of TFT. In this work, a 30 nm thin film of molybdenum is introduced into copper electrode to form a copper-molybdenum source/drain electrode of a-IGZO TFT, which not only inhibits the diffusion of copper, but also enhances the interfacial adhesion between electrode and substrate. The obtained Cu-Mo TFT possesses a high mobility of∼9.26 cm2·V−1·s−1 and a low subthreshold swing of 0.11 V/Decade. Moreover, it has shorter current transfer length(∼0.2 µm), lower contact resistance (∼1072 Ω), and effective contact resistance (∼1 × 10−4 Ω·cm2) than the pure copper electrode. Cu-Mo electrode with low contact resistance and high adhesion to substrates paves the way to the application of copper in high conductivity interconnection of a-IGZO TFT.

  4. Germanium and gallium

    International Nuclear Information System (INIS)

    Present article is devoted to germanium and gallium content in fluorite. The literature data on germanium and gallium content was analysed. The literature data on germanium and gallium distribution in fluorite of various geologic deposits and ores of Kazakhstan, Uzbekistan, Tajikistan and some geologic deposits of Russia were studied. The germanium and gallium content in fluorite of geologic deposits of various mineralogical and genetic type was defined.

  5. Automotive Aluminium Recycling

    Energy Technology Data Exchange (ETDEWEB)

    Gelas, B. des

    2000-07-01

    This paper aims at providing an overview on the contribution of aluminium recycling in the supply of new aluminium for automotive applications. Based on a presentation on how the global European automotive aluminium supply requirements are met, an analysis of the present and future contribution of automotive aluminium recycling is first presented. Current situation and future developments for automotive aluminium recycling practices are then commented, together with an outline on design principles for easier aluminium recycling. (orig.)

  6. Gallium-67 citrate an alternative radiopharmaceutical to111In DTPA for colonic transit studies

    International Nuclear Information System (INIS)

    Indium DTPA is the current radiopharmaceutical of choice for the evaluation of colonic transit in constipated patients. Its drawback encouraged the authors to look for an alternative tracer. It was found that gallium-67 citrate is versatile starting material for the preparation of many gallium complexes. Because of its lack of absorption from the gastro-intestinal tract, it has the following advantages over indium DTPA as a radioactive colonic transit marker: it is readily available, and being less than $1/MBq compared to $40/MBq, savings of up to $700 can be achieved per patient study. 5 refs., 2 tabs., 7 figs

  7. Note on thermodynamic instability of M4C3-type carbides of gallium group metals

    International Nuclear Information System (INIS)

    The paper deals with thermodynamic stability of hypothetical solid binary M4C3 carbides of gallium, indium and thallium. Heats of formation whose contribution to the stability of these compounds is dominant, were estimated by two independent methods: semiempirical theory of Miedema and empirical trends in the heats of formation of nitrides and carbides of Group III elements. Entropies were calculated with the use of the Cantor equation. The estimated values suggest that M4C3 carbides of gallium, indium and thallium are thermodynamically unstable with regard to their decomposition of elements. (Author)

  8. Preparation of Amorphous Indium-gallium-zinc-oxide Film and Its Application in Thin-film Transistor%非晶铟镓锌氧化物薄膜的制备及其在薄膜晶体管中的应用

    Institute of Scientific and Technical Information of China (English)

    李光; 郑艳彬; 王文龙; 姜志刚

    2012-01-01

    Amorphous indium-gallium-zinc-oxide ( a-IGZO ) thin film, as a new kind of transparent oxide semiconductor material, has attracted much attention recently. This is due to its excellent performance and it has been successfully applied in thin-film transistors ( TFT) , showing great application prospection in display industry. In this presentation, the crystal structure of IGZO was also introduced. The main preparation methods of a-IGZO film were introduced and reviewed, including sputtering, spin-coating and inkjet printing. At last, we give some prospects on the industrialization of IGZO TFT-based display technology.%非晶铟镓锌氧化物(a-IGZO)薄膜,作为一种新型透明氧化物半导体材料,最近引起了广泛关注.这主要是由于它优异的性能可以使它作为薄膜晶体管的有源层材料,在显示行业有巨大的应用前景.本文首先介绍了铟镓锌氧化物的结构,同时综述了非晶铟镓锌氧化物薄膜的制备方法,包括溅射、悬涂和喷墨印刷技术;最后对基于铟镓锌氧化物薄膜晶体管背板技术的产业化进行了展望.

  9. Investigations in gallium removal

    Energy Technology Data Exchange (ETDEWEB)

    Philip, C.V.; Pitt, W.W. [Texas A and M Univ., College Station, TX (United States); Beard, C.A. [Amarillo National Resource Center for Plutonium, TX (United States)

    1997-11-01

    Gallium present in weapons plutonium must be removed before it can be used for the production of mixed-oxide (MOX) nuclear reactor fuel. The main goal of the preliminary studies conducted at Texas A and M University was to assist in the development of a thermal process to remove gallium from a gallium oxide/plutonium oxide matrix. This effort is being conducted in close consultation with the Los Alamos National Laboratory (LANL) personnel involved in the development of this process for the US Department of Energy (DOE). Simple experiments were performed on gallium oxide, and cerium-oxide/gallium-oxide mixtures, heated to temperatures ranging from 700--900 C in a reducing environment, and a method for collecting the gallium vapors under these conditions was demonstrated.

  10. Gallium scintigraphy for diagnosis of septic arthritis and osteomyelitis in children

    International Nuclear Information System (INIS)

    Thirty-four children with presumptive acute osteomyelitis or septic arthritis underwent early gallium-67 citrate scintigraphy and have been retrospectively reviewed. Diagnostic accuracy using this technique was 91%. Gallium-67 citrate is a more reliable radiopharmaceutical agent for the detection of selected acute musculoskeletal infections than either technetium methylene diphosphonate or indium-111. However, the radiation dosage from gallium is higher than from other radiopharmaceutical agents, and the authors would recommend its use only in cases where the diagnosis cannot be made on the basis of clinical, laboratory, or plain roentgenographic criteria

  11. Aluminium structural elements

    OpenAIRE

    Švent, Nejc

    2016-01-01

    This thesis focuses on the structural analysis of aluminium structural members in accordance with the SIST EN 1999-1-1 standard. In the introduction, historical development of aluminium is summarized, as well as the processes of structural aluminium production and manufacture. Predominantly, resistance control checks of aluminium structural members are covered, with special attention to the major contrasts between aluminium and steel structural analyses. Finally, fundamental examples of resis...

  12. Sequential technetium-99m HMDP-gallium-67 citrate imaging for the evaluation of infection in the painful prosthesis

    International Nuclear Information System (INIS)

    In order to evaluate the clinical utility of sequential technetium-99m HMDP-gallium-67 scanning in patients with painful orthopedic prosthesis, a retrospective review was made of 154 sequential scans performed in 130 patients. Criteria for a positive study included spatially incongruent gallium-technetium uptake or gallium uptake that was congruent but more intense than technetium. Images were interpreted as negative if gallium was congruent and less intense than technetium. Sixty-six patients underwent surgery (31 infected, 35 aseptic), and 64 were evaluated clinically (3 infected, 61 aseptic). The combined results of the surgical and nonsurgical patients yielded a sensitivity of 66%, a specificity of 81%, and an accuracy of 77%. In this series, the technetium-gallium scan combination has proven to be helpful but more recent techniques such as indium-111-labeled leukocytes may prove to be superior to sequential technetium-gallium imaging

  13. The study of aluminium anodes for high power density AL-air batteries with brine electrolytes

    OpenAIRE

    Nestoridi, Maria

    2009-01-01

    In this thesis aluminium alloys containing small additions of both tin (~ 0.1 wt %) and gallium (~ 0.05 wt %) dissolve anodically at high rates in brine media; at room temperature, current densities > 0.2 A cm-2 can be obtained at potentials close to the open circuit potential, ~ -1.5 V vs SCE. Alloys without both tin and gallium do not dissolve at such a negative potential. The tin exists in the alloys as a second phase, typically as ~ 1 ?m inclusions throughout the aluminium structure. Anod...

  14. Regularly arranged indium islands on glass/molybdenum substrates upon femtosecond laser and physical vapor deposition processing

    Science.gov (United States)

    Ringleb, F.; Eylers, K.; Teubner, Th.; Boeck, T.; Symietz, C.; Bonse, J.; Andree, S.; Krüger, J.; Heidmann, B.; Schmid, M.; Lux-Steiner, M.

    2016-03-01

    A bottom-up approach is presented for the production of arrays of indium islands on a molybdenum layer on glass, which can serve as micro-sized precursors for indium compounds such as copper-indium-gallium-diselenide used in photovoltaics. Femtosecond laser ablation of glass and a subsequent deposition of a molybdenum film or direct laser processing of the molybdenum film both allow the preferential nucleation and growth of indium islands at the predefined locations in a following indium-based physical vapor deposition (PVD) process. A proper choice of laser and deposition parameters ensures the controlled growth of indium islands exclusively at the laser ablated spots. Based on a statistical analysis, these results are compared to the non-structured molybdenum surface, leading to randomly grown indium islands after PVD.

  15. 原子层沉积氧化锌应用于铜铟镓硒太阳能电池缓冲层的研究%Study on Application of Atomic Layer Depositing Zinc Oxide for Buffer Layer to Copper Indium Gallium Selenium Solar Battery

    Institute of Scientific and Technical Information of China (English)

    廖荣; 张海燕; 谢佳亮; 杨铁铮; 罗文中; 胡伟

    2013-01-01

    A zinc oxide thin-film was deposited on soda lime glass with the method of atomic layer deposition (ALD),and field emission scanning electron microscope and X-ray diffractometer were employed to analyze the surface appearance and phase of the sample.The results show that the nanoparticle of ZnO is hexangular wurtzite structure and the size of particle is 30-60 nm.The measured thickness of ZnO thin-film is only 50 nm,which can meet the requirement of buffer layer.Transmittance of the thin-film in visible light area is more than 90%.Using atomic layer deposited zinc oxide thin-film as buffer layer of copper indium gallium selenium (CIGS) solar battery,it can be found that the zinc oxide layer covers the CIGS layer tightly,and that the photoelectric conversion efficiency of battery is high,so it can fully replace the toxic CdS as buffer layer.%用原子层沉积法在钠钙玻璃上沉积氧化锌薄膜,利用场发射扫描电镜和X射线衍射(XRD)等对样品表面形貌和物相进行分析,结果表明得到的ZnO纳米颗粒为六角纤锌矿结构,颗粒的尺寸在30~60 nm之间;测得的ZnO薄膜厚度仅50 nm,符合缓冲层要求;薄膜在可见光区域透射率达90%以上;使用原子层沉积氧化锌薄膜作铜铟镓硒太阳能电池的缓冲层,TEM显示氧化锌层完好、致密地覆盖在CIGS层上,电池的光电转换效率较高,完全可以替代有毒的CdS作缓冲层.

  16. Uranium and thorium behavior at aluminium floating-zone refining

    International Nuclear Information System (INIS)

    Uranium and thorium behaviour during aluminium refining by crystallization from the melt is ascertained. Measurements of of uranium and thorium radioactive impurities content in high-purity aluminiumn samples using the surface α-activity method are carried out. The content of the given impurities happened to be less than 1 x 10-7 mass.%. Such purity satisfies the requirements to materials applied in the low background 71Ge detection system of gallium-germanium solar neutrino detector

  17. Clinical imaging with indium 111 oxine-labeled leukocyte scan: review and case report

    International Nuclear Information System (INIS)

    The clinical use and mechanisms of action of technetium 99m pyrophosphate, gallium 67 citrate, and indium 111 oxine have been presented. The diagnosis of osteomyelitis in the lower extremity can often be made on the basis of clinical, laboratory, and conventional radiographic evaluations. In the case report of diabetic osteolysis, initial evaluations revealed osteomyelitis. The use of scanning involving leukocytes labeled with technetium and indium 111 oxine lessened the possibilities of an osseous infection. Studies show the sensitivity, specificity, and accuracy of scans using leukocytes labeled with indium 111 oxine to be superior to those of any other form of nucleotide imaging, but further clinical research is needed.20 references

  18. Recovery of galium and indium from liquid crystal displays and CIGS photovailtaic modules

    NARCIS (Netherlands)

    Bisselink, R.; Steeghs, W.; Brouwer, J.G.H.

    2014-01-01

    Abstract: The increasing amount of electronics, such as consumer products and green technologies (e.g. solar PV cells) increases the demand of metals such as indium and gallium. This increasing demand together with the dependency on import of these metals drive research on recycling of waste electro

  19. Gallium interstitial contributions to diffusion in gallium arsenide

    OpenAIRE

    Schick, J. T.; Morgan, C. G.; Papoulias, P

    2011-01-01

    Enthalpies of formation of gallium interstitials and all the other native point defects in gallium arsenide are calculated using the same well-converged \\emph{ab initio} techniques. Using these results, equilibrium concentrations of these defects are computed as a function of chemical potential from the arsenic rich limit to the gallium rich limit and as a function of the doping level from $p$-type to $n$-type. Gallium interstitial diffusion paths and migration barriers for diffusion are dete...

  20. Electrodeposition of gallium for photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, Raghu N.

    2016-08-09

    An electroplating solution and method for producing an electroplating solution containing a gallium salt, an ionic compound and a solvent that results in a gallium thin film that can be deposited on a substrate.

  1. Indium-111 leukocyte scintigraphic detection of subclinical osteomyelitis complicating delayed and nonunion long bone fractures: a prospective study

    International Nuclear Information System (INIS)

    Twenty patients were studied prospectively with indium-labeled leukocyte imaging to evaluate its effectiveness in differentiating noninfected delayed or nonunion from osteomyelitis complicating these entities. All patients underwent an open surgical procedure within 24 h of the scan. Bone specimens from the nonunion site were obtained for microbiological and histological analysis to confirm the presence or absence of osteomyelitis. In these twenty patients, the sensitivity of the indium scintigraphy was 100%, the specificity 100%, and the overall accuracy 100%. Indium-labeled leukocyte scintigraphy is significantly more accurate than /sup 99m/technetium and 67gallium imaging had been, when studied earlier, in detecting subclinical osteomyelitis complicating nonunion. Indium-labeled leukocyte scintigraphy should supplant sequential technetium and gallium studies in this patient population when the surgeon must determine whether subclinical osteomyelitis is complicating fracture management of delayed and nonunions

  2. Charge-tunable indium gallium nitride quantum dots

    Science.gov (United States)

    Zhang, Lei; Teng, Chu-Hsiang; Ku, Pei-Cheng; Deng, Hui

    2016-02-01

    III-Nitride quantum dots have emerged as a new chip-scale system for quantum information science, which combines electrical and optical interfaces on a semiconductor chip that is compatible with noncryogenic operating temperatures. Yet most work has been limited to optical excitations. To enable single-spin-based quantum optical and quantum information research, we demonstrate here quantized charging in optically active, site-controlled III-nitride quantum dots. Single-electron charging was confirmed by the voltage dependence of the energy, dipole moment, fine structures, and polarization properties of the exciton states in the quantum dots. The fundamental energy structures of the quantum dots were identified, including neutral and charged excitons, fine structures of excitons, and A and B excitons. The results lay the ground for coherent control of single charges in III-nitride quantum dots, opening a door to III-nitride-based spintronics and spin-qubit quantum information processing.

  3. Solubility of uranium in liquid gallium, indium and their alloys

    International Nuclear Information System (INIS)

    Pyrochemical reprocessing of spent nuclear fuels (SNF) employing molten salts and liquid metals as working media is considered as a possible alternative to the existing liquid extraction (PUREX) processes. Liquid salts and metals allow reprocessing highly irradiated high burn-up fuels with short cooling times, including the fuels of fast neutron reactors. Pyrochemical technology opens a way to practical realization of short closed fuel cycle. Liquid low-melting metals are immiscible with molten salts and can be effectively used for separation (or selective extraction) of SNF components dissolved in fused salts. Binary or ternary alloys of eutectic compositions can be employed to lower the melting point of the metallic phase. However, the information on SNF components behaviour and properties in ternary liquid metal alloys is very scarce

  4. Czochralski growth of gallium indium antimonide alloy crystals

    Energy Technology Data Exchange (ETDEWEB)

    Tsaur, S.C.

    1998-02-01

    Attempts were made to grow alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb by the conventional Czochralski process. A transparent furnace was used, with hydrogen purging through the chamber during crystal growth. Single crystal seeds up to about 2 to 5 mole% InSb were grown from seeds of 1 to 2 mole% InSb, which were grown from essentially pure GaSb seeds of the [111] direction. Single crystals were grown with InSb rising from about 2 to 6 mole% at the seed ends to about 14 to 23 mole% InSb at the finish ends. A floating-crucible technique that had been effective in reducing segregation in doped crystals, was used to reduce segregation in Czochralski growth of alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb. Crystals close to the targeted composition of 1 mole% InSb were grown. However, difficulties were encountered in reaching higher targeted InSb concentrations. Crystals about 2 mole% were grown when 4 mole% was targeted. It was observed that mixing occurred between the melts rendering the compositions of the melts; and, hence, the resultant crystal unpredictable. The higher density of the growth melt than that of the replenishing melt could have triggered thermosolutal convection to cause such mixing. It was also observed that the floating crucible stuck to the outer crucible when the liquidus temperature of the replenishing melt was significantly higher than that of the growth melt. The homogeneous Ga{sub 1{minus}x}In{sub x}Sb single crystals were grown successfully by a pressure-differential technique. By separating a quartz tube into an upper chamber for crystal growth and a lower chamber for replenishing. The melts were connected by a capillary tube to suppress mixing between them. A constant pressure differential was maintained between the chambers to keep the growth melt up in the growth chamber. The method was first tested with a low temperature alloy Bi{sub 1{minus}x}Sb{sub x}. Single crystals of Ga{sub 1{minus}x}In{sub x}Sb were grown with uniform compositions up to nearly 5 mole% InSb.

  5. Fabrication of Aluminum Gallium Nitride/Gallium Nitride MESFET And It's Applications in Biosensing

    Science.gov (United States)

    Alur, Siddharth

    Gallium Nitride has been researched extensively for the past three decades for its application in Light Emitting Diodes (LED's), power devices and UV photodetectors. With the recent developments in crystal growth technology and the ability to control the doping there has been an increased interest in heterostructures formed between Gallium nitride and it's alloy Aluminium Gallium Nitride. These heterostructures due to the combined effect of spontaneous and piezoelectric effect can form a high density and a high mobility electron gas channel without any intentional doping. This high density electron gas makes these heterostructures ideal to be used as sensors. Gallium Nitride is also chemically very stable. Detection of biomolecules in a fast and reliable manner is very important in the areas of food safety and medical research. For biomolecular detection it is paramount to have a robust binding of the probes on the sensor surface. Therefore, in this dissertation, the fabrication and application of the AlGaN/GaN heterostructures as biological sensors for the detection of DNA and Organophosphate hydrolase enzyme is discussed. In order to use these AlGaN/GaN heterostructures as biological sensors capable of working in a liquid environment photodefinable polydimethyl-siloxane is used as an encapsulant. The immobilization conditions for a robust binding of thiolated DNA and the catalytic receptor enzyme organophosphate hydrolase on gold surfaces is developed with the help of X-ray photoelectron spectroscopy. DNA and OPH are detected by measuring the change in the drain current of the device as a function of time.

  6. NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference

    Energy Technology Data Exchange (ETDEWEB)

    Fitzgerald, M. [ed.

    1993-05-01

    Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

  7. Ultra-low threshold gallium nitride photonic crystal nanobeam laser

    International Nuclear Information System (INIS)

    We report exceptionally low thresholds (9.1 μJ/cm2) for room temperature lasing at ∼450 nm in optically pumped Gallium Nitride (GaN) nanobeam cavity structures. The nanobeam cavity geometry provides high theoretical Q (>100 000) with small modal volume, leading to a high spontaneous emission factor, β = 0.94. The active layer materials are Indium Gallium Nitride (InGaN) fragmented quantum wells (fQWs), a critical factor in achieving the low thresholds, which are an order-of-magnitude lower than obtainable with continuous QW active layers. We suggest that the extra confinement of photo-generated carriers for fQWs (compared to QWs) is responsible for the excellent performance

  8. Chemical mechanical polishing of Indium phosphide, Gallium arsenide and Indium gallium arsenide films and related environment and safety aspects

    Science.gov (United States)

    Matovu, John Bogere

    As scaling continues with advanced technology nodes in the microelectronic industry to enhance device performance, the performance limits of the conventional substrate materials such as silicon as a channel material in the front-end-of-the-line of the complementary metal oxide semiconductor (CMOS) need to be surmounted. These challenges have invigorated research into new materials such as III-V materials consisting of InP, GaAs, InGaAs for n-channel CMOS and Ge for p-channels CMOS to enhance device performance. These III-V materials have higher electron mobility that is required for the n-channel while Ge has high hole mobility that is required for the p-channel. Integration of these materials in future devices requires chemical mechanical polishing (CMP) to achieve a smooth and planar surface to enable further processing. The CMP process of these materials has been associated with environment, health and safety (EH&S) issues due to the presence of P and As that can lead to the formation of toxic gaseous hydrides. The safe handling of As contaminated consumables and post-CMP slurry waste is essential. In this work, the chemical mechanical polishing of InP, GaAs and InGaAs films and the associated environment, health and safety (EH&S) issues are discussed. InP removal rates (RRs) and phosphine generation during the CMP of blanket InP films in hydrogen peroxide-based silica particle dispersions in the presence and absence of three different multifunctional chelating carboxylic acids, namely oxalic acid, tartaric acid, and citric acid are reported. The presence of these acids in the polishing slurry resulted in good InP removal rates (about 400 nm min-1) and very low phosphine generation (surfaces (0.1 nm RMS surface roughness). The optimized slurry compositions consisting of 3 wt % silica, 1 wt % hydrogen peroxide and 0.08 M oxalic acid or citric acid that provided the best results on blanket InP films were used to evaluate their planarization capability of patterned InP-STI structures of 200 mm diameter wafers. Cross sectional scanning electron microscope (SEM) images showed that InP in the shallow trench isolation structures was planarized and scratches, slurry particles and smearing of InP were absent. Additionally, wafers polished at pH 6 showed very low dishing values of about 12-15 nm, determined by cross sectional SEM. During the polishing of blanket GaAs, GaAs RRs were negligible with deionized water or with silica slurries alone. They were relatively high in aq. solutions of H2O2 alone and showed a strong pH dependence, with significantly higher RRs in the alkaline region. The addition of silica particles to aq. H2O2 did not increase the GaAs RRs significantly. The evolution of arsenic trihydride (AsH3) during the dissolution of GaAs in aq. H2O2 solution was similarly higher in the basic pH range than in neutral pH or in the acidic pH range. However, no AsH3 was measured during polishing, evidently because of the relatively high water solubility of AsH3. The work done on InGaAs polishing shows that InGaAs RR trends are different from those observed for InP or GaAs. InGaAs RRs at pH 2 are higher than those at pH 10 and highest at pH 4. Dissolution rates (DRs), Fourier Transform Infrared Spectroscopy (FTIR), contact angles, X-Ray Photoelectron Spectroscopy (XPS), X-Ray Fluorescence Spectroscopy (XRF), zeta potential measurements and calculated Gibbs free energy changes of the reactions involved during polishing and gas formation were used to discuss the observed RRs and hydride gas generation trends and to propose the reaction pathways involved in the material removal and in hydride gas generation mechanisms.

  9. High-Pressure Synthesis, Crystal Structure and Physical Properties of Gallium Oxonitride

    OpenAIRE

    Zvoriste, Carmen

    2011-01-01

    This thesis is concerned with the synthesis and properties of the high-pressure, high-temperature (HP/HT) phase of gallium oxonitride, which has a spinel-type structure. Since this material is an analogue of γ-alon (spinel-aluminium oxonitride), which is known to be an important material with a wide range of applications, the spinelstructured gallium oxonitride is an attractive material with the potential for tailoring its composition and tuning its electronic properties, i.e. for optoelectro...

  10. Rows of Dislocation Loops in Aluminium Irradiated by Aluminium Ions

    DEFF Research Database (Denmark)

    Henriksen, L.; Johansen, A.; Koch, J.;

    1967-01-01

    Single-crystal aluminium specimens, irradiated with 50-keV aluminium ions, contain dislocation loops that are arranged in regular rows along <110 > directions. ©1967 The American Institute of Physics......Single-crystal aluminium specimens, irradiated with 50-keV aluminium ions, contain dislocation loops that are arranged in regular rows along <110 > directions. ©1967 The American Institute of Physics...

  11. Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide

    International Nuclear Information System (INIS)

    We report the first systematic measurement of the electroreflectance spectra of In/sub u/Ga/sub 1-u/P/sub v/As/sub 1-v/ over the range of compositions that lattice-match InP substrates, at room temperature and for energies between 0.7 and 3.5 eV. Analysis of the spectra has enabled us to determine the composition dependence of E0, E0+Δ0, E1, E1+Δ1, Δ0, and Δ1. Experimentally determined values of E0, E0+Δ0, and m*/m0 have been used to predict the values of the g factors for these compounds

  12. Optical properties of aluminium-gallium-nitride semiconductors; Optische Eigenschaften von Aluminium-Galliumnitrid-Halbleitern

    Energy Technology Data Exchange (ETDEWEB)

    Roeppischer, Marcus

    2011-08-17

    In this work fundamental optical properties of AlN, GaN and their alloys are presented. Spectroscopic ellipsometry from the near infrared (NIR) to the vacuum-ultraviolet (VUV) spectral region was the main tool to investigate these properties. The complete dielectric function (DF) of cubic as well as hexagonal GaN and AlN in the range between 0.6 eV and 20 eV is shown here, for the first time. A layer model including surface roughness and buffer layers was used to separate the DF of the investigated layer from the measured pseudo-DF. Afterwards all absorption structures in the DF's are discussed in detail. Due to the comparison with calculated bandstructures these absorption structures could be connected to interband transitions at high symmetry points in the Brillouin zone (BZ). Within this analysis similarities and differences between GaN and AlN are discussed. For zincblende (zb) AlN a pronounced absorption tail below the direct band gap transition was detected. This behaviour is typical for a phonon-assisted indirect absorption. In contrast zb-GaN exhibits a clear direct absorption. Furthermore, a change in the energetic position of the two main interband absorptions E1 and E2 at the L- and X-point of the BZ was found. A detailed analysis of the anisotropic fundamental band gap of hexagonal AlN offers a interchange of the two topmost valance bands at the BZ center compared to GaN. Due to this permutation the fundamental band edge of wurtzit (wz) AlN is only visible for parallel polarized light, while for GaN it can be detect in the perpendicular configuration. By analysing the energetic position of the three excitonic transitions the crystal-field- and spin-orbit-splitting were defined to be {delta}{sub cr}=-226 meV and {delta}{sub so}=14 meV. In addition, the energetic positions for these transitions at T=15 K are 6.0465 eV, 6.2694 eV and 6.2775 eV. The comparison between measurements at room and low temperature shows an energetic shift for both absorption edges of about 80 meV. By comparing the energetic positions of the excitonic transitions with the lattice parameters of different samples on silicon, sapphire and SiC substrate the influence of strain on the optical properties of wz-AlN was investigated. Due to this analysis the deformation potentials within the cubic approximation were calculated. Finally the spectral region below the fundamental band gap absorption of cubic AlGaN layers were studied. Therefore an analytical model was developed to calculate the dispersion in the transparent range for an arbitrary Al-content.

  13. 铟镓砷焦平面阵列在微光夜视应用中的潜力及前景%The Potential and Prospect of Indium Gallium Arsenide Focal Plane Array Applied to Low Light Level Night Vision

    Institute of Scientific and Technical Information of China (English)

    潘京生; 孙建宁; 金戈; 任玲; 毛汉祺; 顾燕; 郭一亮; 苏德坦

    2014-01-01

    得益于夜气辉在短波红外(SWIR)0.9~1.7μm波段的自然辐射数十倍强于夜天空在可见光和近红外(NIR)0.4~0.9μm波段的辐射,SWIR成像成为应用于微光条件下的成像探测的最佳选择,由晶格匹配In0.53Ga0.47As/InP制作InGaAs焦平面阵列(Focal Plane Array,FPA),灵敏于0.9~1.7μm波段,在整个响应波段具有超过70%的量子效率,和室温非制冷工作的极低的暗电流。通过减薄基底,还可将InGaAs FPA的短波限延伸至可见光波段的0.4μm。最近几年,超低暗电流、低读出噪声、大面阵和小像素尺寸的InGaAs FPA的开发取得了实质性的进展,特别是暗电流得到了数量级的降低,InGaAs FPA探测器已经显露出应用于微光夜视的极大潜力,并且还通过采用更复杂的温度相关的非均匀校正算法实现了无TEC的低功耗工作,基于超低噪声的密集阵列InGaAs FPA的SWIR成像技术有望成为新一代夜视技术的一个重要组成部份。%The shortwave infrared(SWIR)spectral irradiance in the 0.9μm to 1.7μm band which caused by night airglow is several ten times stronger than the irradiance in the visible and near infrared realm of 0.4μm to 0.9μm of the night sky, so SWIR imaging is the best choice for the imaging detection under low light level condition. The Indium Gallium Arsenide(InGaAs)focal plane array(FPA)sensors based on lattice matched In0.53Ga0.47As/InP is sensitive to SWIR light whose wavelength is from 0.9μm to 1.7μm, matching the spectral irradiance caused by night airglow, and have exceeded quantum efficiency of 70%over whole response spectral range, as well as with very low dark current while working at room temperature. Removing the InP substrate from the FPA allows extending cutoff wavelength to visible region of 0.4μm. The work on InGaAs FPA with ultra low dark current, low readout noise, large format and small pixel size has been progressing substantially in

  14. Selectivity of colour reactions between elements and organic reagents in organo-aqueous acetic acid media

    International Nuclear Information System (INIS)

    Reasons, responsible for selectivity of photometric reactions in organo-aqueous acetic acid media, have been studied taking aluminium, gallium, and indium reactions as examples. Solution-and paper electrophoresis as well as distribution chromatography were used to examine the state of the elements in various media, including those for most selective determination of aluminium in the presence of gallium and indium. A high selectivity is due to the formation of an electrically neutral species of aluminium. And chloride complexes of gallium and indium in organo-aqueous acetic acid media. Coloured ternary complexes of aluminium with organic reagents and phosphoric acid are formed in the presence of the latter

  15. Electrospun Gallium Nitride Nanofibers

    International Nuclear Information System (INIS)

    The high thermal conductivity and wide bandgap of gallium nitride (GaN) are desirable characteristics in optoelectronics and sensing applications. In comparison to thin films and powders, in the nanofiber morphology the sensitivity of GaN is expected to increase as the exposed area (proportional to the length) increases. In this work we present electrospinning as a novel technique in the fabrication of GaN nanofibers. Electrospinning, invented in the 1930s, is a simple, inexpensive, and rapid technique to produce microscopically long ultrafine fibers. GaN nanofibers are produced using gallium nitrate and dimethyl-acetamide as precursors. After electrospinning, thermal decomposition under an inert atmosphere is used to pyrolyze the polymer. To complete the preparation, the nanofibers are sintered in a tube furnace under a NH3 flow. Both scanning electron microscopy and profilometry show that the process produces continuous and uniform fibers with diameters ranging from 20 to a few hundred nanometers, and lengths of up to a few centimeters. X-ray diffraction (XRD) analysis shows the development of GaN nanofibers with hexagonal wurtzite structure. Future work includes additional characterization using transmission electron microscopy and XRD to understand the role of precursors and nitridation in nanofiber synthesis, and the use of single nanofibers for the construction of optical and gas sensing devices.

  16. Recovery in aluminium

    DEFF Research Database (Denmark)

    Gundlach, Carsten

    2006-01-01

    growth curves are represented as strings. To identify the strings a combination of a 5D connected component type algorithm and multi-peak fitting was found to be superior. The first use of the method was a study of recovery of a deformed aluminium alloy (AA1050). The aluminium alloy was deformed by cold......In the present thesis the development of a unique experimental method for volume characterisation of individual embedded crystallites down to a radius of 150 nm is presented. This method is applied to in-situ studies of recovery in aluminium. The method is an extension of 3DXRD microscopy, an X......-ray diffraction technique for studies of the evolution of grains within polycrystalline materials. The much smaller volume of the crystallites of interest here in comparison to grains implies that the existing method is not applicable due to overlap of diffraction spots. In this work this obstacle is overcome by...

  17. Soldering of aluminium alloys

    International Nuclear Information System (INIS)

    A literature survey about soldering in general and aluminium alloys soldering in particular is presented. The existing methods of soldering aluminium alloys are described. These include soldering with flux, soldering after preliminary plating, vacuum brazipressure and temperature (NTP), sample age calculation based on 14C half life of 5570 and 5730 years, age correction for NTP, dendrochronological corrections and the relative radiocarbon concentration. All results are given with one standard deviation. Input data test (Chauvenet's criterion), gas purity test, standard deviation test and test of the data processor are also included in the program. (author)

  18. Plastic deformation of indium nanostructures

    International Nuclear Information System (INIS)

    Highlights: → Indium nanopillars display two different deformation mechanisms. → ∼80% exhibited low flow stresses near that of bulk indium. → Low strength nanopillars have strain rate sensitivity similar to bulk indium. → ∼20% of compressed indium nanopillars deformed at nearly theoretical strengths. → Low-strength samples do not exhibit strength size effects. - Abstract: Mechanical properties and morphology of cylindrical indium nanopillars, fabricated by electron beam lithography and electroplating, are characterized in uniaxial compression. Time-dependent deformation and influence of size on nanoscale indium mechanical properties were investigated. The results show two fundamentally different deformation mechanisms which govern plasticity in these indium nanostructures. We observed that the majority of indium nanopillars deform at engineering stresses near the bulk values (Type I), with a small fraction sustaining flow stresses approaching the theoretical limit for indium (Type II). The results also show the strain rate sensitivity and flow stresses in Type I indium nanopillars are similar to bulk indium with no apparent size effects.

  19. Gallium Safety in the Laboratory

    International Nuclear Information System (INIS)

    A university laboratory experiment for the US Department of Energy magnetic fusion research program required a simulant for liquid lithium. The simulant choices were narrowed to liquid gallium and galinstan (Ga-In-Sn) alloy. Safety information on liquid gallium and galinstan were compiled, and the choice was made to use galinstan. A laboratory safety walkthrough was performed in the fall of 2002 to support the galinstan experiment. The experiment has been operating successfully since early 2002

  20. Gallium Safety in the Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Cadwallader, L.C.

    2003-05-07

    A university laboratory experiment for the US Department of Energy magnetic fusion research program required a simulant for liquid lithium. The simulant choices were narrowed to liquid gallium and galinstan (Ga-In-Sn) alloy. Safety information on liquid gallium and galinstan were compiled, and the choice was made to use galinstan. A laboratory safety walkthrough was performed in the fall of 2002 to support the galinstan experiment. The experiment has been operating successfully since early 2002.

  1. Gallium Safety in the Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Lee C. Cadwallader

    2003-06-01

    A university laboratory experiment for the US Department of Energy magnetic fusion research program required a simulant for liquid lithium. The simulant choices were narrowed to liquid gallium and galinstan (Ga-In-Sn) alloy. Safety information on liquid gallium and galinstan were compiled, and the choice was made to use galinstan. A laboratory safety walkthrough was performed in the fall of 2002 to support the galinstan experiment. The experiment has been operating successfully since early 2002.

  2. Gallium and imaging studies

    International Nuclear Information System (INIS)

    The indications for the use of 67Gallium imaging studies of the lungs are discussed. In spite of localization of 67Ga in a large variety of neoplastic and inflammatory tissues, there is only limited application of the lung study in the differential diagnosis of pulmonary diseases. The chest radiograph will continue to be the principal tool for evaluation of pulmonary diseases. The 67Ga-citrate scan serves as a study complementary to the chest radiograph, as it indicates the localization, extent and degree of activity of lung disease with greater accuracy than radiography. Gallium-67 scanning may be used in the evaluation of patients with lymphoreticular neoplasms, especially Hodgkin-disease and malignant lymphoma both during initial staging and in evaluation of the response to therapy. The 67Ga-citrate scan is useful in the pre-operative evaluation of patients with lung cancer. Hilar and mediastinal lymphadenopathy are accurately revealed. The lung study is non-invasive and complementary to mediastinoscopy by showing from which glands a biopsy might be taken. Unsuspected extrathoracic secondaries may be shown up, as well as pulmonary metastases from malignancies elsewhere, although the metastases must be at least 1,5 cm in size. The 67Ga lung scan is valuable in the evaluation of pulmonary infiltrates of suspicious infective etiology, the differentiation between pulmonary infection and pneumonia in selected cases, follow-up of sarcoid patients on corticosteroid therapy, evaluation of inflammatory activity of idiopathic pulmonary fibrosis and the early detection of neo-plastic or inflammatory diseases before the chest radiograph reveals abnormality, e.g. in diffuse carcinomatosis or Pneumocystis carinii-infection. The sensitivity of tumors to radiation or chemotherapy may be shown

  3. Fire exposed aluminium structures

    NARCIS (Netherlands)

    Maljaars, J.; Fellinger, J.H.H.; Soetens, F.

    2006-01-01

    Material properties and mechanical response models for fire design of steel structures are based on extensive research and experience. Contrarily, the behaviour of aluminium load bearing structures exposed to fire is relatively unexplored. This article gives an overview of physical and mechanical pr

  4. Extraction of indium from indium-zinc concentrates

    Institute of Scientific and Technical Information of China (English)

    LI Shi-qing; TANG Mo-tang; HE Jing; YANG Sheng-hai; TANG Chao-bo; CHEN Yong-ming

    2006-01-01

    A new process for extracting indium from indium-zinc concentrates was proposed. The process can directly extract indium from removed copper solution by D2EHPA, and cancel the stage of removing iron in the traditional process because of using iron and part of zinc in the In-Zn concentrates for direct preparing high quality Mn-Zn soft magnetic ferrites. The technologies in the processes, such as leaching the neutral leached residues with high concentrated acid at high temperature, reduction ferric and removing copper, and extracting indium, were investigated. The results show that total recovery ratio of indium is increased from less than 70% in the traditional process to more than 95%. This process has the advantages of largely simplifying the procedure of indium extraction, zero draining off of iron residue and zero emitting of SO2. So this is a clean production process.

  5. Carbon doping of gallium arsenide and reflectance difference spectroscopy of compound semiconductors grown by metalorganic vapor-phase epitaxy

    Science.gov (United States)

    Begarney, Michael John

    The surface structure and chemistry of compound semiconductors used in heterojunction bipolar transistors was investigated. Lattice-matched, single crystal films of gallium arsenide and indium phosphide were deposited by metalorganic vapor-phase epitaxy in a horizontal-flow, quartz reactor. Two areas of the transistor fabrication process were studied: (1) carbon doping of the gallium arsenide base layer using carbon tetrachloride, and (2) in-situ monitoring of the surface reconstructions of gallium arsenide and indium phosphide by reflectance difference spectroscopy for improved heterointerface formation. Carbon tetrachloride was found to effect the growth of gallium arsenide in two ways: (1) reaction of chlorine with adsorbed gallium atoms to produce volatile GaCl, and (2) reaction of chlorine with the GaAs film to produce GaCl3. The latter of these reactions was found to be insignificant below a temperature-dependent threshold ratio of chlorine to gallium. At lower values of this ratio, step bunching and pinning was observed, while at higher values, pits ranging from 20 to 50 nm in diameter resulted. We show that these results arise due to the presence of the c(4 x 4) gallium arsenide reconstruction during crystal growth, and the site-specific adsorption of CCl4 at gallium atom sites, which are present only at step edges for this reconstruction. The relationship between the reflectance difference spectra and the atomic structure of arsenic-rich reconstructions of GaAs (001) were investigated. It was found that a roughening process, involving the desorption of arsenic and outdiffusion of gallium atoms to the surface, takes place as the surface structure changes with decreasing arsenic coverage. We determined that the intensity of the negative peak at 2.8 eV strongly depends on the presence of adsorbed alkyl groups and gallium atoms, while, by contrast, the intensity of the positive peak at 2.9 eV is directly proportional to the density of (2 x 4)-type dimers. We

  6. Gallium scanning in cerebral and cranial infections

    International Nuclear Information System (INIS)

    Eighteen patients with cranial or intracranial infections were studied with technetium and gallium brain scans. Seven of 18 lesions were noted with gallium and not with pertechnetate, while the reverse pattern was not seen. Brain abscesses were visualized with gallium but not with pertechnetate in two of five cases. Osteomyelitis of the skull and mastoiditis showed intense gallium uptake in all cases, while meningitis or cerebritis gave inconsistent results

  7. Electron microscopy of gallium nitride growth on polycrystalline diamond

    International Nuclear Information System (INIS)

    Transmission and scanning electron microscopy were used to examine the growth of gallium nitride (GaN) on polycrystalline diamond substrates grown by metalorganic vapour phase epitaxy with a low-temperature aluminium nitride (AlN) nucleation layer. Growth on unmasked substrates was in the (0001) orientation with threading dislocation densities ≈7 × 109 cm−2. An epitaxial layer overgrowth technique was used to reduce the dislocation densities further, by depositing silicon nitride stripes on the surface and etching the unmasked regions down to the diamond substrate. A re-growth was then performed on the exposed side walls of the original GaN growth, reducing the threading dislocation density in the overgrown regions by two orders of magnitude. The resulting microstructures and the mechanisms of dislocation reduction are discussed. (paper)

  8. Recovery in aluminium

    OpenAIRE

    Gundlach, Carsten

    2006-01-01

    In the present thesis the development of a unique experimental method for volume characterisation of individual embedded crystallites down to a radius of 150 nm is presented. This method is applied to in-situ studies of recovery in aluminium. The method is an extension of 3DXRD microscopy, an X-ray diffraction technique for studies of the evolution of grains within polycrystalline materials. The much smaller volume of the crystallites of interest here in comparison to grains implies that the ...

  9. Recycling process for recovery of gallium from GaN an e-waste of LED industry through ball milling, annealing and leaching

    International Nuclear Information System (INIS)

    Waste dust generated during manufacturing of LED contains significant amounts of gallium and indium, needs suitable treatment and can be an important resource for recovery. The LED industry waste dust contains primarily gallium as GaN. Leaching followed by purification technology is the green and clean technology. To develop treatment and recycling technology of these GaN bearing e-waste, leaching is the primary stage. In our current investigation possible process for treatment and quantitative leaching of gallium and indium from the GaN bearing e-waste or waste of LED industry dust has been developed. To recycle the waste and quantitative leaching of gallium, two different process flow sheets have been proposed. In one, process first the GaN of the waste the LED industry dust was leached at the optimum condition. Subsequently, the leach residue was mixed with Na2CO3, ball milled followed by annealing, again leached to recover gallium. In the second process, the waste LED industry dust was mixed with Na2CO3, after ball milling and annealing, followed acidic leaching. Without pretreatment, the gallium leaching was only 4.91 w/w % using 4 M HCl, 100 °C and pulp density of 20 g/L. After mechano-chemical processing, both these processes achieved 73.68 w/w % of gallium leaching at their optimum condition. The developed process can treat and recycle any e-waste containing GaN through ball milling, annealing and leaching. - Highlights: • Simplest process for treatment of GaN an LED industry waste developed. • The process developed recovers gallium from waste LED waste dust. • Thermal analysis and phase properties of GaN to Ga2O3 and GaN to NaGaO2 revealed. • Solid-state chemistry involved in this process reported. • Quantitative leaching of the GaN was achieved

  10. Aluminium and human breast diseases.

    Science.gov (United States)

    Darbre, P D; Pugazhendhi, D; Mannello, F

    2011-11-01

    The human breast is exposed to aluminium from many sources including diet and personal care products, but dermal application of aluminium-based antiperspirant salts provides a local long-term source of exposure. Recent measurements have shown that aluminium is present in both tissue and fat of the human breast but at levels which vary both between breasts and between tissue samples from the same breast. We have recently found increased levels of aluminium in noninvasively collected nipple aspirate fluids taken from breast cancer patients (mean 268 ± 28 μg/l) compared with control healthy subjects (mean 131 ± 10 μg/l) providing evidence of raised aluminium levels in the breast microenvironment when cancer is present. The measurement of higher levels of aluminium in type I human breast cyst fluids (median 150 μg/l) compared with human serum (median 6 μg/l) or human milk (median 25 μg/l) warrants further investigation into any possible role of aluminium in development of this benign breast disease. Emerging evidence for aluminium in several breast structures now requires biomarkers of aluminium action in order to ascertain whether the presence of aluminium has any biological impact. To this end, we report raised levels of proteins that modulate iron homeostasis (ferritin, transferrin) in parallel with raised aluminium in nipple aspirate fluids in vivo, and we report overexpression of mRNA for several S100 calcium binding proteins following long-term exposure of MCF-7 human breast cancer cells in vitro to aluminium chlorhydrate. PMID:22099158

  11. Method of aluminium fluoride manufacture

    International Nuclear Information System (INIS)

    The manufacture of aluminium fluoride is based on waste processing in uranium hexafluoride conversion to uranium oxides within the fuel cycle. The conversion is the stoichiometric conversion of uranium hexafluoride with aluminium nitrate to uranyl nitrate. This is extracted from the water phase by phosphoric acid trialkyl ester to an organic solvent and further processed. The discharge water phase is solidified by evaporation to solid aluminium fluoride and nitric acid. (M.S.)

  12. Gallium scintigraphy in Hansen's disease

    International Nuclear Information System (INIS)

    Gallium 67 imaging was used in 12 patients with documented Hansen's disease undergoing treatment or not in an attempt to determine the pattern of the disease. Diagnosis was confirmed by histopathology in all patients. The Mitsuda reaction was seen in all patients. Specific nuclear studies were performed when needed to evaluate particular organs better. Gallium 67 images show homogeneous, diffuse and moderate accumulation over the entire skin surface (except for the face) of untreated patients with multibacillary disease. The face skin in these cases presented homogeneous, diffuse but very marked uptake of gallium. Internal organ involvement was variable. There was a very good correlation among clinical, scintigraphical, immunological and histopathological data. The pattern of the body skin ('skin outlining') and face skin ('beard distribution') may be distinct for untreated patients with multibacillary leprosy. (orig.)

  13. Medical Applications and Toxicities of Gallium Compounds

    Directory of Open Access Journals (Sweden)

    Christopher R. Chitambar

    2010-05-01

    Full Text Available Over the past two to three decades, gallium compounds have gained importance in the fields of medicine and electronics. In clinical medicine, radioactive gallium and stable gallium nitrate are used as diagnostic and therapeutic agents in cancer and disorders of calcium and bone metabolism. In addition, gallium compounds have displayed anti-inflammatory and immunosuppressive activity in animal models of human disease while more recent studies have shown that gallium compounds may function as antimicrobial agents against certain pathogens. In a totally different realm, the chemical properties of gallium arsenide have led to its use in the semiconductor industry. Gallium compounds, whether used medically or in the electronics field, have toxicities. Patients receiving gallium nitrate for the treatment of various diseases may benefit from such therapy, but knowledge of the therapeutic index of this drug is necessary to avoid clinical toxicities. Animals exposed to gallium arsenide display toxicities in certain organ systems suggesting that environmental risks may exist for individuals exposed to this compound in the workplace. Although the arsenic moiety of gallium arsenide appears to be mainly responsible for its pulmonary toxicity, gallium may contribute to some of the detrimental effects in other organs. The use of older and newer gallium compounds in clinical medicine may be advanced by a better understanding of their mechanisms of action, drug resistance, pharmacology, and side-effects. This review will discuss the medical applications of gallium and its mechanisms of action, the newer gallium compounds and future directions for development, and the toxicities of gallium compounds in current use.

  14. Metal Insulator Semiconductor Structures on Gallium Arsenide.

    Science.gov (United States)

    Connor, Sean Denis

    Available from UMI in association with The British Library. The compound semiconductor gallium arsenide and its associated aluminium alloys have been the subject of intensive research in recent years. These materials offer the advantage of high electron mobilities coupled with the ability to be 'barrier engineered' leading to high injection efficiencies in bipolar devices. From a technological viewpoint however these materials are difficult to work with and device realisation is a major problem. Both thermal and anodic oxidation of these materials fail to produce a dielectric of sufficient quality for device applications and as a result devices tend to be complex non planar, mesa structures. A technique is proposed whereby the electrical interface is separated from the dielectric by means of a thin layer of AlGaAs, carrier confinement in the active GaAs region being maintained by the potential barriers to holes and electrons formed by the GaAs-AlGaAs junction. The integrity of these barriers is maintained by the provision of a suitable 'capping' dielectric. The electrical characteristics of various dielectric systems on GaAs have been investigated by means of current -voltage, capacitance-voltage and electronic breakdown measurements. Transport mechanisms for leakage current through these systems are identified and the interface properties (viz Fermi level pinning etc.) assessed by means of a direct comparison between experimental capacitance-voltage curves and theoretical data obtained from classical theory. As a technique for producing a convenient, in house 'capping' dielectric with good electrical and mechanical properties, the plasma anodisation of deposited aluminium films has been investigated. The anodisation parameters have been optimised for oxidation of these films in a microwave sustained oxygen plasma to give alumina films of around 500 A. A qualitative model for the anodisation process, involving linear and parabolic growth kinetics is proposed and

  15. The gallium solar neutrino experiment

    International Nuclear Information System (INIS)

    The overwhelming majority of solar neutrinos are low energy pp-neutrinos. Among the few potential experiments for their detection, the radiochemical Gallium Solar Neutrino experiment is the only one which has been demonstrated to be feasible. The strong motivations for performing such an experiment, the experimental approach, the major results of the pilot experiment performed in an international collaboration, recent progress in further reducing the counter backgrounds, experiments towards Resonance Ionization of Gallium for ultimate background reduction, the status of the project, and the plans for the future are all described. (author)

  16. First Principles Study of Aluminium Vacancy in Wurtzite Aluminium Nitride

    Institute of Scientific and Technical Information of China (English)

    GAO Ting-Ge; YI Jue-Min; ZHOU Zi-Yao; HU Xiao-Dong

    2008-01-01

    @@ We report that the aluminium vacancy in wurtzite AIN brings about two impurity levels e and a2 in the band gap, not just one single t2 level The aluminium vacancy carries a magnetic moment of 1 μB in the ground state. The molecule orbit of the aluminium vacancy becomes e↑↑ a2↑ rather than e↑↑ a2↑. The calculation is carried out by using the CASTEP code. The intrinsic symmetry of wurtzite A1N is the driving force for this spin splitting. Finally the symmetry of wurtzite AlN results in an anti-ferromagnetic coupling between the aluminium vacancies, as is predicted. Our findings are helpful to gain a more through understanding of the structural and spin property of aluminium vacancy in wurtzite AIN.

  17. Liquid gallium rotary electric contract

    Science.gov (United States)

    Przybyszewski, J. S.

    1969-01-01

    Due to its low vapor pressure, gallium, when substituted for mercury in a liquid slip ring system, transmits substantial amounts of electrical current to rotating components in an ultrahigh vacuum. It features low electrical loss, little or no wear, and long maintenance-free life.

  18. Common features of gallium perovskites

    NARCIS (Netherlands)

    Aleksiyko, R; Berkowski, M; Byszewski, P; Dabrowski, B; Diduszko, R; Fink-Finowicki, J; Vasylechko, LO

    2001-01-01

    The Czochralski and floating zone methods have been used to grow single crystals of gallium perovskites solid solutions with rare earth elements La, Pr, Nd, Sm and with Sr. The structure of the crystals has been investigated by powder X-ray, synchrotron radiation and neutron diffraction methods over

  19. Gallium scintigraphy in acute panniculitis

    International Nuclear Information System (INIS)

    Gallium scintigraphy was performed in a 27-yr-old female in search of a possible occult focus of infection; it showed an unusual diffuse superficial accumulation in the thighs and buttocks. Biopsy of an area of abnormal uptake showed lobular panniculitis which, in the clinical context, led to the diagnosis of Weber-Christian syndrome

  20. Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

    CERN Document Server

    Morgado, J; Charas, A; Matos, M; Alcacer, L; Cacialli, F

    2003-01-01

    We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide.

  1. Vacancy-indium clusters in implanted germanium

    KAUST Repository

    Chroneos, Alexander I.

    2010-04-01

    Secondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.

  2. Aluminium, antiperspirants and breast cancer.

    Science.gov (United States)

    Darbre, P D

    2005-09-01

    Aluminium salts are used as the active antiperspirant agent in underarm cosmetics, but the effects of widespread, long term and increasing use remain unknown, especially in relation to the breast, which is a local area of application. Clinical studies showing a disproportionately high incidence of breast cancer in the upper outer quadrant of the breast together with reports of genomic instability in outer quadrants of the breast provide supporting evidence for a role for locally applied cosmetic chemicals in the development of breast cancer. Aluminium is known to have a genotoxic profile, capable of causing both DNA alterations and epigenetic effects, and this would be consistent with a potential role in breast cancer if such effects occurred in breast cells. Oestrogen is a well established influence in breast cancer and its action, dependent on intracellular receptors which function as ligand-activated zinc finger transcription factors, suggests one possible point of interference from aluminium. Results reported here demonstrate that aluminium in the form of aluminium chloride or aluminium chlorhydrate can interfere with the function of oestrogen receptors of MCF7 human breast cancer cells both in terms of ligand binding and in terms of oestrogen-regulated reporter gene expression. This adds aluminium to the increasing list of metals capable of interfering with oestrogen action and termed metalloestrogens. Further studies are now needed to identify the molecular basis of this action, the longer term effects of aluminium exposure and whether aluminium can cause aberrations to other signalling pathways in breast cells. Given the wide exposure of the human population to antiperspirants, it will be important to establish dermal absorption in the local area of the breast and whether long term low level absorption could play a role in the increasing incidence of breast cancer. PMID:16045991

  3. Color reactions between indium and reagents of chromotropic acid 2,7-bisazo substituted derivatives in water - organic media

    International Nuclear Information System (INIS)

    Colour reactions between indium and six 2,7-bisazo substituted chromotropic acid derivatives have been studied in organo-aqueous solutions containing propanol and isopropanol. The reactions between indium and picramin S or picramin M in the organo-aqueous solutions are more sensitive and contrast than in aqueous media. New highly sensitive reactions for the reagents, whose benzene rings contain carboxy groups, have been found. Significant amounts of some complexing substances and acids do not interfere with the reaction between indium and picramin M although their application does not improve the reaction selectivity. The selectivity can be dramatically improved if the reaction proceeds directly in an organic extract after indium extraction by diisopropyl ether from a solution containing H2SO4 and KI. The possibility has been shown of photometric determining indium in gallium compounds using a model mixture of In and Ga (1:2400). Multiple by mass quantities of Ga (3700), Ca (3600), Fe (2500), Al (1700) do not interfere with indium determination

  4. Aluminium oxide exoelectron dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Akselrod, M.S.; Odegov, A.L. (Urals State Technical Univ., Ekaterinburg (Russian Federation)); Durham, J.S. (Pacific Northwest Lab., Richland, WA (United States))

    1994-01-01

    The exoemission properties of aluminium oxide ([alpha]-Al[sub 2]O[sub 3]:C), in the forms of both a single crystal and of powder, have been investigated. Measurements obtained during readout in a vacuum showed that irradiated Al[sub 2]O[sub 3]:C dosemeters emit exoelectrons with a sensitivity that is 10-20 times higher than that achievable using beryllium oxide (BeO) exoelectron dosemeters (EEDs). This paper presents results of studies using a commercial methane gas reader. The investigators studied the response of the Al[sub 2]O[sub 3]:C EEDs as a function of beta energy and measured the dose-response relationship. The effect of humidity on the dosemeter response was also investigated. (Author).

  5. Gallium-67 scintigraphy and the Heart

    International Nuclear Information System (INIS)

    Although gallium-67 was initially used for tumor imaging, clinical studies suggested its potential use as a method of detecting occult inflammatory lesions. The demonstration of diffuse myocardial uptake of gallium-67 during Lyme disease myocarditis is consistent with a pattern of diffuse myocarditis as seen in sarcoid myocarditis. Two cases are presented. A critical review of the various applications of gallium-67 scintigraphy to myocardium investigation is carried out

  6. Tuberculosis peritonitis: gallium-67 scintigraphic appearance.

    Science.gov (United States)

    Sumi, Y; Ozaki, Y; Hasegawa, H; Shindoh, N; Katayama, H; Tamamoto, F

    1999-06-01

    Tuberculosis peritonitis is a rare manifestation of extrapulmonary tuberculosis. The results of gallium-67 scintigraphy of three patients with tuberculosis peritonitis were reviewed to assess its usefulness in the diagnosis of this condition. Tuberculosis peritonitis was associated with diffuse or focal abdominal localization and decreased hepatic accumulation of gallium-67. These gallium-67 scan features of tuberculosis peritonitis may help to optimize the diagnosis and management of this disease. PMID:10435380

  7. Indentation fracture of gallium arsenide

    OpenAIRE

    Pouvreau, Cédric; GIOVANOLA, Jacques; Breguet, Jean-Marc

    2008-01-01

    The scribe and break technique (or dicing) is a widely employed method in the industry of semiconductors to separate infrared laser diodes made from gallium arsenide (GaAs). The scribing step allows to create a precursor crack which is then propagated during the breaking step, along preferential {110} cleavage planes of GaAs. The main drawback of the scribing process is that it generates a lot of undesirable cracks and particles that degrade the performances of devices. In this dissertation, ...

  8. Roll bonding of strained aluminium

    DEFF Research Database (Denmark)

    Staun, Jakob M.

    2003-01-01

    This report investigates roll bonding of pre-strained (å ~ 4) aluminium sheets to produce high strain material from high purity aluminium (99.996%) and commercial pure aluminium (99.6%). The degree of bonding is investigated by optical microscopy and ultrasonic scanning. Under the right...... circumstances both materials show good bonding, but the high purity material is excluded because of recrystallisation and the resulting loss of mechanical properties. The effect of cross stacking and roll bonding pre-strained sheets of the commercial purity material is investigated and some dependence of the...... cross rolled volume fraction is found. To further asses this effect, and the anisotropy, it is necessary to acquire knowledge about both texture and microstructure, e.g. by TEM. Roll bonding of pre-strained aluminium is found to be a possible alternative to ARB in the quest for ultra-fine grained...

  9. Friction surfacing of aluminium alloys

    OpenAIRE

    Pereira, Diogo Jorge O. A.

    2012-01-01

    Friction surfacing is a solid state joining process that has attracted much interest in the past decades. This technology allows joining dissimilar metallic materials while avoiding the brittle intermetallic formations, involving temperatures bellow melting point and producing like forged metal structures. Much research using different steels has been made but the same does not happen with aluminium alloys, specially using different aluminium alloys. Friction surface coatings using cons...

  10. Gallium-67 scintigraphy for acute pancreatitis

    International Nuclear Information System (INIS)

    Gallium-67 citrate has been evaluated in six patients diagnosed to have acute pancreatitis based on clinical picture, urine and serum amylase level, Ultrasanography and CT scan findings. The diagnosis of acute pancreatitis was confirmed by gallium-67 scan in four patients (True positive). One of them showed evidence of acute cholecysitis and pancreatitis. No gallium uptake was detected in the region of pancreas in the other two (True negative). Repeated gallium scan in two of the true positive patients showed decreased gallium concentration in the pancreas in response to medical treatment. The scan became normal in one of these two after four weeks. We conclude that gallium-67 scintigraphy is useful to determine extent and severity of acute pancreatitis and in following the response to medical treatment. Gallium (67Ga) has been under utilised in acute pancreatitis. The aim of the present study is to find the value of gallium-67 scintigraphy in determining the extent and severity of acute pancreatitis at the initial diagnosis and for follow up of medically treated patients. (Author)

  11. Indium gallium zinc oxide (IGZO)-based Ohmic contact formation on n-type gallium antimony (GaSb)

    International Nuclear Information System (INIS)

    In this paper, Ohmic-like contact on n-type GaSb with on/off-current ratio of 1.64 is presented, which is formed at 500 °C by inserting IGZO between metal (Ni) and GaSb. The resulting Ohmic contact is systematically investigated by TOF-SIMS, HSC chemistry simulation, XPS, TEM, AFM, and J–V measurements. Two main factors contributing to the Ohmic contact formation are (1) InSb (or InGaSb) with narrow energy bandgap (providing low electron and hole barrier heights) formed by In diffusion from IGZO and Sb released by Ga oxidation, and (2) free Sb working as traps that induces tunneling current. - Highlights: • We demonstrate Ohmic-like contact on n-type GaSb with on/off-current ratio of 1.64. • The reverse current is increased by low electron barrier height and high TAT current. • The low electron barrier height is achieved by the formation of InGaSb. • Free Sb atoms also work as traps inducing high TAT current

  12. Epitaxy and structural characterizations of green and deep green gallium indium nitride/gallium nitride light-emitting diodes

    Science.gov (United States)

    Zhu, Mingwei

    Green light-emitting diode (LED) is an essential component in energy-efficient solid-state white lighting with good color rendering. Its efficiency, however, falls far behind the AlGaInP-based red LEDs and AlGaInN-based blue LEDs. The propensity of defect generation and large polarization field across the c-axis grown GaInN/GaN active region limit the performance of green LEDs. This thesis studied the epitaxial growth and structural properties of polar and non-polar green GaInN/GaN LEDs. LEDs were grown by metalorganic vapor phase epitaxy and their optical properties and structural perfection were evaluated at different development stages by means of optical spectroscopy, transmission electron microscopy (TEM), atomic force microscopy, and X-ray diffraction techniques. V-defects triggered by edge-type misfit dislocations (MDs) were observed and analyzed in the c-plane green QWs on sapphire. Epitaxy processes were developed to suppress V-defect and MD initiation in LEDs up to the yellow wavelength range, resulting in light output power (LOP) enhancement by a factor of two compared to same-wavelength defective light emitters. The V-defect-free green LED also shows improvement of reliability. A reduction of dislocation density by a factor of 30 was achieved by homoepitaxy for c-plane blue LED on bulk GaN and lead to a power enhancement by an order of magnitude at 20 mA compared to the simultaneously grown blue LED on sapphire. In green LEDs on c-plane bulk GaN, a unique type of defect -- an inclined dislocation pair (IDP) was found in the active region. A model was proposed to quantitatively explain the formation of IDPs by the stepwise removal of lattice points between the separating dislocations lined up along opposing directions. A high density of MD generation was found in the active region of a c-plane yellow LED on bulk GaN that leads to a strain relaxation of the QW. Higher efficiency at low current (threading dislocations and stacking faults. A good power cyan LED (481 nm, 2.8 mW at 100 mA) was achieved on m-plane bulk GaN but LEDs show a significant power drop as the wavelength is extended to the green range (> 510 nm). This is attributed to the formation of MDs in the active region. We find that twice the InN fraction is needed in the a-plane and m-LEDs to reach the same green wavelength emission as the c-plane LEDs. We attribute this to the absence of the piezoelectric field in the non-polar growth directions. a-Plane and m-plane green LEDs show a minimal wavelength shift over a wide range of current. This result is highly relevant for the realization of color-stable energy-efficient solid-state lighting.

  13. Study of preparation conditions of gallium tellurates

    International Nuclear Information System (INIS)

    A physico-chemical study has been made of the interaction of gallium chloride with telluric acid at different pH values. The crystallization conditions for gallium tellurate with a Te(VI):Ga ratio of 2 have been found. The GaCl3-K4H2TeO6-H2O system was investigated by the method of residual concentrations. It is shown that at a reacting component ratio (n) of less than 1.5 amorphous (x-ray) basic gallium tellurates are found in the solid phase. When n>1.5 and pH>12, in time crystalline gallium tellurate with a Te(VI):Ga ratio of 2:1 separates from the homogeneous solution into the solid phase. Gallium tellurate was synthesized and its chemical composition established

  14. Control of gallium incorporation in sol–gel derived CuIn(1−x)GaxS2 thin films for photovoltaic applications

    International Nuclear Information System (INIS)

    Highlights: • CuIn(1−x)GaxS2 thin films were prepared by sol–gel process. • Evolution of lattice parameters is characteristic of a solid solution. • Optical band gap was found to be linearly dependent on the gallium rate. - Abstract: In this paper, we report the elaboration of Cu(In,Ga)S2 chalcopyrite thin films via a sol–gel process. To reach this aim, solutions containing copper, indium and gallium complexes were prepared. These solutions were thereafter spin-coated onto the soda lime glass substrates and calcined, leading to metallic oxides thin films. Expected chalcopyrite films were finally obtained by sulfurization of oxides layers using a sulfur atmosphere at 500 °C. The rate of gallium incorporation was studied both at the solutions synthesis step and at the thin films sulfurization process. Elemental and X-ray diffraction (XRD) analyses have shown the efficiency of monoethanolamine used as a complexing agent for the preparation of CuIn(1−x)GaxS2 thin layers. Moreover, the replacement of diethanolamine by monoethanolamine has permitted the substitution of indium by isovalent gallium from x = 0 to x = 0.4 and prevented the precipitation of copper derivatives. XRD analyses of sulfurized thin films CuIn(1−x)GaxS2, clearly indicated that the increasing rate of gallium induced a shift of XRD peaks, revealing an evolution of the lattice parameter in the chalcopyrite structure. These results were confirmed by Raman analyses. Moreover, the optical band gap was also found to be linearly dependent upon the gallium rate incorporated within the thin films: it varies from 1.47 eV for x = 0 to 1.63 eV for x = 0.4

  15. Phase change cells and the verification of gallium as a thermal calibration reference in space

    Science.gov (United States)

    Latvikoski, Harri; Bingham, Gail E.; Topham, T. S.; Podolski, Igor

    2015-09-01

    The validation of models of global climate change and accurate measurement of the atmosphere and surface temperatures require that orbital sensors have low drift rates, and are monitored or regularly recalibrated by accepted standards. Phase change materials (PCM), such as those that make up the ITS-90 standard, are the basis for international commerce and have been suggested for monitoring and recalibration of orbital temperature sensors. Space Dynamics Laboratory (SDL) and its partners have been developing miniaturized phase change reference technologies that could be deployed on an orbital blackbody for nearly a decade. A significant part of this effort has been the exploration of the behavior of gallium (Ga) and its eutectics, gallium-tin (GaSn) and gallium-indium (GaIn) in conditions expected to be encountered in this application. In this paper, these behaviors are detailed and an example of a hardware design that could be used as an infrared blackbody calibration monitor is presented. To determine if and how microgravity will affect the behavior of Ga, the authors conducted an experiment on the International Space Station (ISS) and compared the observed phase change temperature with earth-based measurements. This paper also provides a brief description of the experiment hardware, microgravity considerations, and the pre-flight, flight and post-flight data analysis.

  16. Strongly-guided indium phosphide/indium gallium arsenic phosphide Mach-Zehnder modulator for optical communications

    Science.gov (United States)

    Betty, Ian Brian

    2006-12-01

    The development of strongly-guided InP/In1-x GaxAsyP 1-y based Mach-Zehnder optical modulators for 10Gb/s telecommunications is detailed. The modulators have insertion losses including coupling as low as 4.5dB, due to the incorporation of monolithically integrated optical mode spot-size converters (SSC's). The modulators are optimized to produce system performance that is independent of optical coupling alignment and for wavelength operation between 1525nm and 1565nm. A negatively chirped Mach-Zehnder modulator design is demonstrated, giving optimal dispersion-limited reach for 10Gb/s ON/OFF-keying modulation. It is shown that the optical system performance for this design can be determined from purely DC based optical measurements. A Mach-Zehnder modulator design invoking nearly no transient frequency shifts under intensity modulation is also presented, for the first time, using phase-shifter implementations based on the Quantum-Confined-Stark-Effect (QCSE). The performance impact on the modulator from the higher-order vertical and lateral waveguide modes found in strongly-guided waveguides has been determined. The impact of these higher-order modes has been minimized using the design of the waveguide bends, MMI structures, and doping profiles. The fabrication process and optical design for the spot-size mode converters are also thoroughly explored. The SSC structures are based on butt-joined vertically tapered passive waveguide cores within laterally flared strongly-guided ridges, making them compatible with any strong-guiding waveguide structure. The flexibility of the SSC process is demonstrated by the superior performance it has also enabled in a 40Gb/s electro-absorption modulator. The presented electro-absorption modulator has 3.6dB fiber-to-fiber insertion loss, polarization dependent loss (PDL) of only 0.3dB over 15dB extinction, and low absolute chirp (|alpha H| < 0.6) over the full dynamic range.

  17. Synthesis, characterization and catalytic activity of indium substituted nanocrystalline Mobil Five (MFI) zeolite

    International Nuclear Information System (INIS)

    Highlights: • In situ modification of the MFI zeolite by incorporation of indium. • The samples were characterized by XRD, FTIR, TGA, UV–vis (DRS), SAA, EDX and SEM. • The incorporation of indium was confirmed by XRD, FT-IR, UV–vis (DRS), EDX and TGA. • Hydroxylation of phenol reaction was studied on the synthesized catalysts. - Abstract: A series of indium doped Mobil Five (MFI) zeolite were synthesized hydrothermally with silicon to aluminium and indium molar ratio of 100 and with aluminium to indium molar ratios of 1:1, 2:1 and 3:1. The MFI zeolite phase was identified by XRD and FT-IR analysis. In XRD analysis the prominent peaks were observed at 2θ values of around 6.5° and 23° with a few additional shoulder peaks in case of all the indium incorporated samples suggesting formation of pure phase of the MFI zeolite. All the samples under the present investigation were found to exhibit high crystallinity (∼92%). The crystallite sizes of the samples were found to vary from about 49 to 55 nm. IR results confirmed the formation of MFI zeolite in all cases showing distinct absorbance bands near 1080, 790, 540, 450 and 990 cm−1. TG analysis of In-MFI zeolites showed mass losses in three different steps which are attributed to the loss due to adsorbed water molecules and the two types TPA+ cations. Further, the UV–vis (DRS) studies reflected the position of the indium metal in the zeolite framework. Surface area analysis of the synthesized samples was carried out to characterize the synthesized samples The analysis showed that the specific surface area ranged from ∼357 to ∼361 m2 g−1 and the pore volume of the synthesized samples ranged from 0.177 to 0.182 cm3 g−1. The scanning electron microscopy studies showed the structure of the samples to be rectangular and twinned rectangular shaped. The EDX analysis was carried out for confirmation of Si, Al and In in zeolite frame work. The catalytic activities of the synthesized samples were

  18. Synthesis, characterization and catalytic activity of indium substituted nanocrystalline Mobil Five (MFI) zeolite

    Energy Technology Data Exchange (ETDEWEB)

    Shah, Kishor Kr. [Department of Chemistry, ADP College, Nagaon, Assam 782002 (India); Nandi, Mithun [Department of Chemistry, Gauhati University, Guwahati, Assam 781014 (India); Talukdar, Anup K., E-mail: anup_t@sify.com [Department of Chemistry, Gauhati University, Guwahati, Assam 781014 (India)

    2015-06-15

    Highlights: • In situ modification of the MFI zeolite by incorporation of indium. • The samples were characterized by XRD, FTIR, TGA, UV–vis (DRS), SAA, EDX and SEM. • The incorporation of indium was confirmed by XRD, FT-IR, UV–vis (DRS), EDX and TGA. • Hydroxylation of phenol reaction was studied on the synthesized catalysts. - Abstract: A series of indium doped Mobil Five (MFI) zeolite were synthesized hydrothermally with silicon to aluminium and indium molar ratio of 100 and with aluminium to indium molar ratios of 1:1, 2:1 and 3:1. The MFI zeolite phase was identified by XRD and FT-IR analysis. In XRD analysis the prominent peaks were observed at 2θ values of around 6.5° and 23° with a few additional shoulder peaks in case of all the indium incorporated samples suggesting formation of pure phase of the MFI zeolite. All the samples under the present investigation were found to exhibit high crystallinity (∼92%). The crystallite sizes of the samples were found to vary from about 49 to 55 nm. IR results confirmed the formation of MFI zeolite in all cases showing distinct absorbance bands near 1080, 790, 540, 450 and 990 cm{sup −1}. TG analysis of In-MFI zeolites showed mass losses in three different steps which are attributed to the loss due to adsorbed water molecules and the two types TPA{sup +} cations. Further, the UV–vis (DRS) studies reflected the position of the indium metal in the zeolite framework. Surface area analysis of the synthesized samples was carried out to characterize the synthesized samples The analysis showed that the specific surface area ranged from ∼357 to ∼361 m{sup 2} g{sup −1} and the pore volume of the synthesized samples ranged from 0.177 to 0.182 cm{sup 3} g{sup −1}. The scanning electron microscopy studies showed the structure of the samples to be rectangular and twinned rectangular shaped. The EDX analysis was carried out for confirmation of Si, Al and In in zeolite frame work. The catalytic activities of

  19. Effect of hydrogen on aluminium and aluminium alloys: A review

    DEFF Research Database (Denmark)

    Ambat, Rajan; Dwarakadasa, E.S.

    1996-01-01

    Susceptibility of aluminium and its alloys towards hydrogen embrittlement has been well established. Still a lot of confusion exists on the question of transport of hydrogen and its possible role in stress corrosion cracking. This paper reviews some of the fundamental properties of hydrogen in...... aluminium and its alloys and its effect on mechanical properties. The importance of hydrogen embrittlement over anodic dissolution to explain the stress corrosion cracking mechanism of these alloys is also examined in considerable detail. The various experimental findings concerning the link between...

  20. Uptake of aluminium ion by the liver

    International Nuclear Information System (INIS)

    The specific uptake by the rat liver of 28Al was shown. There was specific uptake of 28Al by liver cell nuclei and DNA. This uptake was blocked by prior treatment with stable aluminium. It is concluded that aluminium enters the liver cell by some specific mechanism and that the reaction of aluminium with DNA inside the hepatocyte nucleus could be a mechanism responsible for the development of aluminium-induced experimental porphyria in the rat

  1. Buckwheat stomatal traits under aluminium toxicity

    Directory of Open Access Journals (Sweden)

    Oleksandr E. Smirnov

    2014-04-01

    Full Text Available Aluminium influence on some stomatal parameters of common buckwheat (Fagopyrum esculentum Moench. was studied. Significant changes in stomatal density, stomatal index and stomatal shape coefficient under aluminium treatment were revealed. Stomatal closure and no difference in total stomatal potential conductance index of treatment plants were suggested as aluminium resistance characteristics.

  2. Electrospun Gallium Nitride Nanofibers (abstract)

    Science.gov (United States)

    Meléndez, Anamaris; Morales, Kristle; Ramos, Idalia; Campo, Eva; Santiago, Jorge J.

    2009-04-01

    The high thermal conductivity and wide bandgap of gallium nitride (GaN) are desirable characteristics in optoelectronics and sensing applications. In comparison to thin films and powders, in the nanofiber morphology the sensitivity of GaN is expected to increase as the exposed area (proportional to the length) increases. In this work we present electrospinning as a novel technique in the fabrication of GaN nanofibers. Electrospinning, invented in the 1930s, is a simple, inexpensive, and rapid technique to produce microscopically long ultrafine fibers. GaN nanofibers are produced using gallium nitrate and dimethyl-acetamide as precursors. After electrospinning, thermal decomposition under an inert atmosphere is used to pyrolyze the polymer. To complete the preparation, the nanofibers are sintered in a tube furnace under a NH3 flow. Both scanning electron microscopy and profilometry show that the process produces continuous and uniform fibers with diameters ranging from 20 to a few hundred nanometers, and lengths of up to a few centimeters. X-ray diffraction (XRD) analysis shows the development of GaN nanofibers with hexagonal wurtzite structure. Future work includes additional characterization using transmission electron microscopy and XRD to understand the role of precursors and nitridation in nanofiber synthesis, and the use of single nanofibers for the construction of optical and gas sensing devices.

  3. Reducing the warpage and dislocation density of GaN template grown by HVPE with gallium droplet treatment

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Young Jun; Oh, Hae-Kon; Kim, Jung-Gyu; Hwang, Hyun-Hee; Lee, Hae-Yong [LumiGNtech Co., Ltd., Room 206, Business Incubator Building, 233-5 Gasan-dong, Guemcheon-gu, Seoul 153-801 (Korea); Lee, Won-Jae; Shin, Byoung-Chul [Electronic Ceramics Center (ECC), Dept. of Materials and Components Engineering, Dong-Eui University, Busan 614-714 (Korea); Hwang, Jonghee [Korea Institute of Ceramic Engineering and Technology (KICET), Seoul 153-801 (Korea)

    2010-07-15

    The warpage of the GaN template grown by a HVPE with gallium droplet treatment (GDT) was 13.8 {mu}m, which was reduced by 80.3% of the warpage for GaN template grown by conventional MOCVD and 43% of the warpage for GaN template grown by HVPE without GDT. The treatment of gallium droplets on sapphire was achieved by thermal evaporator at room temperature. The E{sub 2} high peak of GaN template with GDT showed at 566.5 cm{sup -1}, whereas the E{sub 2} high peak of GaN template by MOCVD positioned at 569.5 cm{sup -1} in Raman scattering spectra. According to the frequency shifts of E{sub 2} high peak position for each template around 3 cm{sup -1}, the release of compressive stress of GaN template grown by HVPE with GDT was shown. In study of FE-SEM and Grow discharge spectroscopy (GDS), voids and concentration decline zones of gallium and aluminium in counter direction were formed at the interface between GaN epilayer and sapphire substrate during GaN growth by HVPE. We expected that the decrease of warpage and stress for GaN template with GDT could be caused by the formation of voids and concentration decline zones of gallium and aluminium. Etch pits density of GaN template with GDT was around 8.5x10{sup 7}/cm{sup 2}. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. The Soviet American Gallium Experiment (SAGE)

    International Nuclear Information System (INIS)

    A radiochemical experiment using the reaction v/sub e/ = 71Ga + e/sup e/ to determine the integral flux of low-energy neutrinos from the sun is currently under preparation at the Baksan Neutrino Observatory in the USSR. Measurements are scheduled to commence by late 1988 using /approximately/30 tonnes of metallic gallium. With this amount of gallium it should be possible to obtain a fractional statistical accuracy of 12 to 15% after one year (assuming the standard solar model neutrino flux). While initial measurements are in progress, installation of the remaining 30 tonnes of gallium will proceed in order to perform the full 60 tonne experiment

  5. Thermal Plasma Synthesis of Crystalline Gallium Nitride Nanopowder from Gallium Nitrate Hydrate and Melamine

    OpenAIRE

    Tae-Hee Kim; Sooseok Choi; Dong-Wha Park

    2016-01-01

    Gallium nitride (GaN) nanopowder used as a blue fluorescent material was synthesized by using a direct current (DC) non-transferred arc plasma. Gallium nitrate hydrate (Ga(NO3)3∙xH2O) was used as a raw material and NH3 gas was used as a nitridation source. Additionally, melamine (C3H6N6) powder was injected into the plasma flame to prevent the oxidation of gallium to gallium oxide (Ga2O3). Argon thermal plasma was applied to synthesize GaN nanopowder. The synthesized GaN nanopowder by thermal...

  6. On the possibility of photometric determination of beryllium in the presence of aluminium by chromazurol S in aqua-organic media

    International Nuclear Information System (INIS)

    The possibility is shown to improve the selectivity of photometric determination of beryllium in the presence of aluminium using the reaction with Chromazurol S (CAS) in organo-aqueous solution and 8-hydroxyquinoline as masking agent. A mixture, containing propanol, 2-3 vol.% H2O and 1-2 vol.% acetic acid, is an optimal medium for the reaction betWeen beryllium and CAS. Determination of 0.45 μg of beryllium in the presence of 2000-fold amounts of aluminiUm is possible. Some other elements (mass excess is bracketed): nickel (7800) indium (2500), zink (700) do not hinder the reaction between beryllium and CAS

  7. The prophylactic reduction of aluminium intake.

    Science.gov (United States)

    Lione, A

    1983-02-01

    The use of modern analytical methods has demonstrated that aluminium salts can be absorbed from the gut and concentrated in various human tissues, including bone, the parathyroids and brain. The neurotoxicity of aluminium has been extensively characterized in rabbits and cats, and high concentrations of aluminium have been detected in the brain tissue of patients with Alzheimer's disease. Various reports have suggested that high aluminium intakes may be harmful to some patients with bone disease or renal impairment. Fatal aluminium-induced neuropathies have been reported in patients on renal dialysis. Since there are no demonstrable consequences of aluminium deprivation, the prophylactic reduction of aluminium intake by many patients would appear prudent. In this report, the major sources of aluminium in foods and non-prescription drugs are summarized and alternative products are described. The most common foods that contain substantial amounts of aluminium-containing additives include some processed cheeses, baking powders, cake mixes, frozen doughs, pancake mixes, self-raising flours and pickled vegetables. The aluminium-containing non-prescription drugs include some antacids, buffered aspirins, antidiarrhoeal products, douches and haemorrhoidal medications. The advisability of recommending a low aluminium diet for geriatric patients is discussed in detail. PMID:6337934

  8. Dynamical study of liquid aluminium

    International Nuclear Information System (INIS)

    Recent molecular dynamics data of Ebbsjoe et al. in liquid aluminium have been analysed through the memory function formalism. Two forms of the memory functions which have correct asymptotic limit at large wavenumbers but accounts for interatomic correlations in a different manner are considered. The results for ω2s(q, ω) obtained from both models are compared with experimental data. (author)

  9. Aluminium foams. manufacture, properties and applications

    International Nuclear Information System (INIS)

    Aluminium foams are porous to have many interesting combinations of physical and mechanical properties, such as high stiffness in conjunction with very low specific weight. The aluminium foam structure, manufacture processes, physical, chemical and mechanical properties and applications are reviewed in this paper. The various manufacturing processes are classified according to the state of matter in which the metal is processed. Liquid aluminium can be foamed directly by injecting gas or gas-releasing blowing agents. Indirect methods include melting of powder compacts which contain a blowing agent. An inert gas entrapped in powder compacts can produce aluminium foams in solid state after heat treatment. Electron-deposition or metal vapour deposition also allow for the production of aluminium foams. Physical, chemical and mechanical properties and the various ways for characterising the aluminium foams are reviewed in second section of this paper. finally, the various application fields for aluminium foams are discussed. They are divided into different industrial sectors. (Author) 75 refs

  10. Electrochemical properties and thermal stability of epoxy coatings electrodeposited on aluminium and modified aluminium surfaces

    Directory of Open Access Journals (Sweden)

    ZORICA M. KACAREVIC-POPOVIC

    2001-12-01

    Full Text Available The corrosion behaviour of epoxy coatings electrodeposited on aluminium, as well as on electrochemically and chemically modified aluminium were investigated during exposure to 3 % NaCl. Electrochemical impedance spectroscopy (EIS and thermogravimetric analysis (TGA were used for the determination of the protective properties of epoxy coatings on aluminium, anodized aluminium, phosphatized and chromatized-phosphatized aluminium. The protective properties of epoxy coatings on anodized and chromatized-phosphatized aluminium are significantly improved with respect to the same epoxy coatings on aluminium and phosphatized aluminium: higher values of the pore resitance and charge-transfer resistance, lower values of the coating capacitance, double-layer capacitance and relative permittivity (from EIS smaller amount of absorbed water inside the coating (From TGA. On the other hand, the lower values of the ipdt temperature indicate a lower thermal stability of the epoxy coatings on anodized and chromatized-phosphatized aluminium.

  11. Gallium and its competing roles with iron in biological systems.

    Science.gov (United States)

    Chitambar, Christopher R

    2016-08-01

    Gallium, a group IIIa metal, shares chemical properties with iron. Studies have shown that gallium-based compounds have potential therapeutic activity against certain cancers and infectious microorganisms. By functioning as an iron mimetic, gallium perturbs iron-dependent proliferation processes in tumor cells. Gallium's action on iron homeostasis leads to disruption of ribonucleotide reductase, mitochondrial function, and the regulation of transferrin receptor and ferritin. In addition, gallium nitrate stimulates an increase in mitochondrial reactive oxygen species in cells which triggers downstream upregulation of metallothionein and hemoxygenase-1. Gallium's anti-infective activity against bacteria and fungi results from disruption of microbial iron utilization through mechanisms which include gallium binding to siderophores and downregulation of bacterial iron uptake. Gallium compounds lack cross-resistance to conventional chemotherapeutic drugs and antibiotics thus making them attractive agents for drug development. This review will focus on the mechanisms of action of gallium with emphasis on its interaction with iron and iron proteins. PMID:27150508

  12. Recovery of gallium from phosphorus industry flue

    Institute of Scientific and Technical Information of China (English)

    许可; 邓彤; 戴玉杰; 王静

    2004-01-01

    The flue dust generated during electric furnace production of elemental phosphorus was investigated for the recovery of gallium. Then the flue dust was slurried with water and blended with concentrated sulfuric acid, followed by ageing. The gallium in the dust was thereby converted to soluble sulfate. The factors affecting the dust curing were investigated to understand the process chemistry of the pretreatment. The optimal curing conditions are determined as follows: the mass ratio of dust to water and acid is 1: 1: 1, ageing temperature and time are 200 ℃ and 2 h, respectively. Almost all the gallium available to acid dissolution in the dust, about 900%00 gallium, can be extracted by leaching the cured dust at 80 ℃ for 1 h.

  13. Radiochemical separation of gallium by amalgam exchange

    Science.gov (United States)

    Ruch, R.R.

    1969-01-01

    An amalgam-exchange separation of radioactive gallium from a number of interfering radioisotopes has been developed. A dilute (ca. 0.3%) gallium amalgam is agitated with a slightly acidic solution of 72Ga3+ containing concentrations of sodium thiocyanate and either perchlorate or chloride. The amalgam is then removed and the radioactive gallium stripped by agitation with dilute nitric acid. The combined exchange yield of the perchlorate-thiocyanate system is 90??4% and that of the chloride-thiocyanate system is 75??4%. Decontamination yields of most of the 11 interfering isotopes studied were less than 0.02%. The technique is applicable for use with activation analysis for the determination of trace amounts of gallium. ?? 1969.

  14. Microscopic dynamics of liquid gallium

    International Nuclear Information System (INIS)

    Complete text of publication follows. Atomic dynamics of liquid gallium is a matter of steady scientific interest in recent years [1, 2]. In this connection a new experiment on inelastic neutron scattering at temperature 373 K was carried out to enlarge previous ones. Measurements were performed with the DIN-2PI time-of flight neutron spectrometer of the direct geometry set up at one of the neutron beams from the IBR-2 pulsed reactor (Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, Dubna). The incident neutron energy was 10 meV, and the wide interval of scattering angles from 11 deg up 134 deg was used. From experimental data dynamic structure factor S(Q,ω) was extracted at constant Q. The characteristics of collective atomic dynamics are discussed. (author)

  15. The Baksan gallium solar neutrino experiment

    Energy Technology Data Exchange (ETDEWEB)

    Gavrin, V.N.; Abazov, A.I.; Abdurashitov, D.N.; Anosov, O.L.; Danshin, S.N.; Eroshkina, L.A.; Faizov, E.L.; Gayevsky, V.I.; Girin, S.V.; Kalikhov, A.V.; Knodel, T.V.; Knyshenko, I.I.; Kornoukhov, V.N.; Mezentseva, S.A.; Mirmov, I.N.; Ostrinsky, A.I.; Petukhov, V.V.; Pshukov, A.M.; Revzin, N.Y.; Shikhin, A.A.; Slusareva, Y.D.; Tikhonov, A.A.; Timofeev, P.V.; Veretenkin, E.P.; Vermul, V.M.; Yantz, V.E.; Zakharov, Yu.I.; Zatsepin, G.T.; Zhandarov, V.L. (AN SSSR, Moscow (USSR). Inst. Yadernykh Issledovanij); Bowles, T.J.; Cleveland, B.T.; Elliott, S.R.; O' Brien, S.R.; Wark, D.L.; Wilkerson, J.F. (Los Alamos National Lab., NM (USA)); Davis, R. Jr.; Lande, K. (Pennsylvania Univ., Philadelphia (USA)); Cherry, M.L. (Louisiana State Univ., Baton Rouge (USA)); Kouzes, R.T. (Princeton Univ., NJ (USA)); SAGE Collaboration

    1990-08-01

    A radiochemical {sup 71}Ga-{sup 71}Ge experiment to determine the integral flux of neutrinos from the sun has been constructed at the Baksan Neutrino Observatory in the USSR. Measurements have begun with 30 tonnes of gallium. An additional 30 tonnes of gallium are being installed so as to perform the full experiment with a 60-tonne target. The motivation, experiment procedures, and present status of this experiment are described. (orig.).

  16. Clinical applications of Gallium-68

    International Nuclear Information System (INIS)

    Gallium-68 is a positron-emitting radioisotope that is produced from a 68Ge/68Ga generator. As such it is conveniently used, decoupling radiopharmacies from the need for a cyclotron on site. Gallium-68-labeled peptides have been recognized as a new class of radiopharmaceuticals showing fast target localization and blood clearance. 68Ga-DOTATOC, 8Ga-DOTATATE, 68Ga-DOTANOC, are the most prominent radiopharmaceuticals currently in use for imaging and differentiating lesions of various somatostatin receptor subtypes, overexpressed in many neuroendocrine tumors. There has been a tremendous increase in the number of clinical studies with 68Ga over the past few years around the world, including within the United States. An estimated ∼10,000 scans are being performed yearly in Europe at about 100 centers utilizing 68Ga-labeled somatostatin analogs within clinical trials. Two academic sites within the US have also begun to undertake human studies. This review will focus on the clinical experience of selected, well-established and recently applied 68Ga-labeled imaging agents used in nuclear medicine. - Highlights: ► A summary of the emerging clinical uses of 68Ga-based radiopharmaceuticals is provided. ► 68Ga-PET may prove as or more clinically robust than the corresponding 18F-labeled agents. ► 68Ga-radiopeptides were studied for targeting of somatostatin receptors subtypes. ► 68Ga-DOTATOC, 68Ga-DOTATATE, 68Ga-DOTANOC, are currently in clinical trials

  17. Gallium-67 citrate imaging in lymphoma

    International Nuclear Information System (INIS)

    Gallium imaging in lymphoma fulfils an important clinical role. The determination of the nature of a residual mass post therapy has prognostic implications for the patient and often changes treatment plans. It has been estimated that approximately 68 per cent of lymphoma patients have a residual mass after treatment but of those only 18 per cent relapse. Morphological imaging techniques such as Xray computed tomography (CT) is unable to determine whether a residual mass after treatment represents tumour or fibrotic and necrotic tissue. Gallium, being a viability agent, is able to accurately identify the amount of viable tumour cells in a mass after treatment allowing assessment of residual masses with increased confidence. This case study presents a 61 year-old lady with a history of high-grade non Hodgkin's lymphoma originating in the thyroid. Gallium imaging was undertaken immediately post surgery, three months after initial therapy and again after a resurgence in symptoms. On all three occasions the Gallium scan showed more extensive disease than that identified on CT. The most recent Gallium scan incorporated CT co registration allowing a concomitant interpretation of anatomy and physiology to be undertaken. In this patient Gallium imaging accurately differentiated active disease from post therapy changes effecting a change in disease status allowing appropriate therapy to be undertaken. Copyright (2002) The Australian and New Zealand Society of Nuclear Medicine Inc

  18. Recycling process for recovery of gallium from GaN an e-waste of LED industry through ball milling, annealing and leaching

    Energy Technology Data Exchange (ETDEWEB)

    Swain, Basudev, E-mail: swain@iae.re.kr; Mishra, Chinmayee; Kang, Leeseung; Park, Kyung-Soo, E-mail: kspark@iae.re.kr; Lee, Chan Gi; Hong, Hyun Seon, E-mail: hshong@iae.re.kr

    2015-04-15

    Waste dust generated during manufacturing of LED contains significant amounts of gallium and indium, needs suitable treatment and can be an important resource for recovery. The LED industry waste dust contains primarily gallium as GaN. Leaching followed by purification technology is the green and clean technology. To develop treatment and recycling technology of these GaN bearing e-waste, leaching is the primary stage. In our current investigation possible process for treatment and quantitative leaching of gallium and indium from the GaN bearing e-waste or waste of LED industry dust has been developed. To recycle the waste and quantitative leaching of gallium, two different process flow sheets have been proposed. In one, process first the GaN of the waste the LED industry dust was leached at the optimum condition. Subsequently, the leach residue was mixed with Na{sub 2}CO{sub 3}, ball milled followed by annealing, again leached to recover gallium. In the second process, the waste LED industry dust was mixed with Na{sub 2}CO{sub 3}, after ball milling and annealing, followed acidic leaching. Without pretreatment, the gallium leaching was only 4.91 w/w % using 4 M HCl, 100 °C and pulp density of 20 g/L. After mechano-chemical processing, both these processes achieved 73.68 w/w % of gallium leaching at their optimum condition. The developed process can treat and recycle any e-waste containing GaN through ball milling, annealing and leaching. - Highlights: • Simplest process for treatment of GaN an LED industry waste developed. • The process developed recovers gallium from waste LED waste dust. • Thermal analysis and phase properties of GaN to Ga{sub 2}O{sub 3} and GaN to NaGaO{sub 2} revealed. • Solid-state chemistry involved in this process reported. • Quantitative leaching of the GaN was achieved.

  19. Friction Welding of Aluminium and Aluminium Alloys with Steel

    Directory of Open Access Journals (Sweden)

    Andrzej Ambroziak

    2014-01-01

    Full Text Available The paper presents our actual knowledge and experience in joining dissimilar materials with the use of friction welding method. The joints of aluminium and aluminium alloys with the different types of steel were studied. The structural effects occurring during the welding process were described. The mechanical properties using, for example, (i microhardness measurements, (ii tensile tests, (iii bending tests, and (iv shearing tests were determined. In order to obtain high-quality joints the influence of different configurations of the process such as (i changing the geometry of bonding surface, (ii using the interlayer, or (iii heat treatment was analyzed. Finally, the issues related to the selection of optimal parameters of friction welding process were also investigated.

  20. Preparation of High-purity Indium Oxalate Salt from Indium Scrap by Organic Acids

    Energy Technology Data Exchange (ETDEWEB)

    Koo, Su-Jin; Ju, Chang-Sik [Pukyoung National University, Busan (Korea, Republic of)

    2013-12-15

    Effect of organic acid on the preparation of indium-oxalate salt from indium scraps generated from ITO glass manufacturing process was studied. Effects of parameters, such as type and concentration of organic acids, pH of reactant, temperature, reaction time on indium-oxalate salt preparation were examined. The impurity removal efficiency was similar for both oxalic acid and citric acid, but citric acid did not make organic acid salt with indium. The optimum conditions were 1.5 M oxalic acid, pH 7, 80 .deg. C, and 6 hours. On the other hand, the recoveries increased with pH, but the purity decreased. The indium-oxalate salt purity prepared by two cycles was 99.995% (4N5). The indium-oxalate salt could be converted to indium oxide and indium metal by substitution reaction and calcination.

  1. Indium flotation from hydrometallurgical solutions

    International Nuclear Information System (INIS)

    The principal possibility of flotation of indium small quantities (10-4 gxion/l) is established from sulphuric-acid solutions of leaching converter dusts of the copper melting production in the form of complex compounds with sodium hexametaphosphate and cation-active nitrogen-containing surfactants. It is shown that the flotation process effectiveness is determined by the molar ratio of hexametaphosphate and collector introduced into the solution, solution oxidity and surfactant nature

  2. Pulmonary disorders in indium-processing workers

    International Nuclear Information System (INIS)

    The production of indium-tin oxide has increased during the past decade, owing to the increased manufacture of liquid-crystal panels, especially in Japan. We carried out a medical checkup including high resolution CT (HRCT), pulmonary function test, KL-6, SP-D and serum indium concentration, for 40 men (mean age 40.4±12.4 years old) working in an indium plant. Four workers who were all smokers had emphysematous changes on HRCT and one subject (non-smoker) had lung cancer. There were no findings of interstitial changes on HRCT. Serum KL-6 was significantly elevated (over 500 U/ml) in 9 subjects (22.5%). Subjects with a high concentration of serum indium (3 ng/ml). The serum indium concentration positively correlated with the KL-6 level. These results suggest that inhaled indium compounds can cause pulmonary disorders such as interstitial changes. (author)

  3. Light forces on an indium atomic beam

    International Nuclear Information System (INIS)

    In this thesis it was studied, whether indium is a possible candidate for the nanostructuration respectively atomic lithography. For this known method for the generation and stabilization of the light necessary for the laser cooling had to be fitted to the special properties of indium. The spectroscopy of indium with the 451 nm and the 410 nm light yielded first hints that the formulae for the atom-light interaction for a two-level atom cannot be directly transferred to the indium atom. By means of the obtained parameters of the present experiment predictions for a possible Doppler cooling of the indium atomic beam were calculated. Furthermore the possibility for the direct deposition of indium on a substrate was studied

  4. Kinetics of indium polyphosphate flotation

    International Nuclear Information System (INIS)

    The purpose of the paper was to clarify the mechanism of interaction of particles with air bubbles in simple flotation act in connection with expanded possibilities of ''ion flotation'' application for extraction of valuable components from diluted hydrometallurgical solutions, liquid wastes and industrial effluents of different industrial processes. A study was made on kinetic regularities of indium flotation by means of inorganic metaphosphates functioning as electronegative ligands, and some salts of long-chain amines. Sulfate indium solutions (pH -4 g-ion/dm3 of the metal were the objects of the investigation. It is shown that the form of kinetic lines is determined by concentration of a collecting agent introduced into indium metaphosphate solutions. The suggested model of flotation is true for the simple act of particles of low-soluble compounds and air bubbles interaction not complicated by the surface (laminar) coagulation of particles of low-soluble compounds with one another on the mobile interface of liquid-gas phases

  5. Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

    KAUST Repository

    ElAfandy, Rami T.

    2012-01-01

    Differences in optical and structural properties of indium rich (27), indium gallium nitride (InGaN) self-organized quantum dots (QDs), with red wavelength emission, and the two dimensional underlying wetting layer (WL) are investigated. Temperature dependent micro-photoluminescence (?PL) reveals a decrease in thermal quenching of the QDs integrated intensity compared to that of the WL. This difference in behaviour is due to the 3-D localization of carriers within the QDs preventing them from thermalization to nearby traps causing an increase in the internal quantum efficiency of the device. Excitation power dependent ?PL shows a slower increase of the QDs PL signal compared to the WL PL which is believed to be due to the QDs saturation. © 2012 American Institute of Physics.

  6. Nanomechanical Characterization of Indium Nano/Microwires

    Directory of Open Access Journals (Sweden)

    N Kiran MSR

    2010-01-01

    Full Text Available Abstract Nanomechanical properties of indium nanowires like structures fabricated on quartz substrate by trench template technique, measured using nanoindentation. The hardness and elastic modulus of wires were measured and compared with the values of indium thin film. Displacement burst observed while indenting the nanowire. ‘Wire-only hardness’ obtained using Korsunsky model from composite hardness. Nanowires have exhibited almost same modulus as indium thin film but considerable changes were observed in hardness value.

  7. High damping indium-tin alloys

    OpenAIRE

    Dooris, A.; Lakes, Roderick S.; Myers, B.; Stephens, N

    2015-01-01

    This research is directed toward the development of materials of high stiffness and high mechanical damping for the purpose of damping vibrations instructures and machinery. To this end, indium-tin alloys are considered. Cast In-Sn exhibits substantial damping for a metal. Quenching substantially improved the damping of indium-tin alloy but the effect gradually disappeared due to aging. Cold work of 1.3% permanent shear strain had the effect of moderately increasing the damping of indium-tin,...

  8. Speciation of scandium and gallium in soil.

    Science.gov (United States)

    Połedniok, Justyna

    2008-09-01

    A method for the speciation of scandium and gallium in soil has been developed. The sequential extraction scheme of Tessier et al. for heavy metals was examined for the scandium and gallium separation. The regents proposed by Tessier were used for the extraction, and only for the residual fraction the HClO4 was replaced with H2SO4. The optimum conditions for leaching scandium and gallium from the soil were chosen for each fraction. Very sensitive, spectrophotometric methods based on the mixed complexes of Sc(III) and Ga(III) with Chrome Azurol S and benzyldodecyldimethylammonium bromide were applied for the scandium and gallium determination after their separation by solvent extraction. 100% mesityl oxide and a 0.5M solution of 2-thenoyltrifluoroacetone in xylene were chosen for the extraction of scandium and butyl acetate was selected for gallium. Soil samples from two different regions of Poland were the object of this research. The content of scandium and gallium found in the individual fractions of Upper Silesia soil (industrial region) was [in microgg(-1)] Sc: I, 1.52; II, 0.53; III, 7.78; IV, 1.79; V, 0.20; Ga: I, 24.7; III, 29.2; IV, 35.4; V, 6.9. In Podlasie soil (agricultural region), the content of both elements was clearly lower. The total content of scandium and gallium in the five soil fractions was in good correlation with the total content of these elements in the soils found after HF-H2SO4 digestion. Analysis using the ICP-OES method gave comparable results. PMID:18653213

  9. On the chemical and electrochemical formation of aluminium carbide in aluminium electrolysis

    OpenAIRE

    Bronislav, Novák

    2013-01-01

    Cathode wear is considered as one of the key factors for limiting the lifetime of aluminium electrolysis cells. This phenomenon has become more important as aluminium smelters have steadily increased the amperage of the cells and shifted towards graphitized cathode materials with higher electrical conductivity. The present work has focused on the fundamentals of the formation of aluminium carbide at the carbon-aluminium interface. The objective was to investigate the mechanism(s) of the forma...

  10. Window structure for passivating solar cells based on gallium arsenide

    Science.gov (United States)

    Barnett, Allen M. (Inventor)

    1985-01-01

    Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich.

  11. Aluminium Process Fault Detection and Diagnosis

    OpenAIRE

    Nazatul Aini Abd Majid; Taylor, Mark P; Chen, John J. J.; Brent R. Young

    2015-01-01

    The challenges in developing a fault detection and diagnosis system for industrial applications are not inconsiderable, particularly complex materials processing operations such as aluminium smelting. However, the organizing into groups of the various fault detection and diagnostic systems of the aluminium smelting process can assist in the identification of the key elements of an effective monitoring system. This paper reviews aluminium process fault detection and diagnosis systems and propo...

  12. A bakable aluminium vacuum chamber with an aluminium flange and metal seal for ultrahigh vacuum

    International Nuclear Information System (INIS)

    A bakable (2000C) aluminium alloy vacuum chamber (6063-T6) with an aluminium alloy (2219-T87) flange and metal seal (Helicoflex-HN: aluminium O-ring) has been constructed. Such components may be used in the construction of the vacuum chamber in proton synchrotrons and electron storage rings. (author)

  13. Toxicity of aluminium on five aquatic invertebrates; Aluminiums toksisitet paa 5 akvatiske invertebrater

    Energy Technology Data Exchange (ETDEWEB)

    Moe, J. [Oslo Univ. (Norway)

    1996-01-01

    The conference paper deals with the experiments done by investigating the effects from the toxicity of aluminium on aquatic invertebrates. The aim of the experiments was to compare the toxicity of unstable aluminium compounds with stable forms of aluminium. 8 refs., 2 figs., 2 tabs.

  14. Global cycle of gallium production, use and potential recycling.

    OpenAIRE

    Yaramadi Dehnavi, Pouya

    2013-01-01

    Life cycle analysis is an appropriate way to clear obscure facts about an element. Gallium is a critical element which is used in many technologies these days and therefore quantification of main global cycles of gallium, production, consumption and end of life products, also investigation about recycled gallium content and potential recycling possibilities are investigated in this paper. First a qualitative substance flow for gallium is designed similar to other metal cycles with regards to ...

  15. Gallium arsenide quantum well-based far infrared array radiometric imager

    Science.gov (United States)

    Forrest, Kathrine A.; Jhabvala, Murzy D.

    1991-01-01

    We have built an array-based camera (FIRARI) for thermal imaging (lambda = 8 to 12 microns). FIRARI uses a square format 128 by 128 element array of aluminum gallium arsenide quantum well detectors that are indium bump bonded to a high capacity silicon multiplexer. The quantum well detectors offer good responsivity along with high response and noise uniformity, resulting in excellent thermal images without compensation for variation in pixel response. A noise equivalent temperature difference of 0.02 K at a scene temperature of 290 K was achieved with the array operating at 60 K. FIRARI demonstrated that AlGaAS quantum well detector technology can provide large format arrays with performance superior to mercury cadmium telluride at far less cost.

  16. Aluminium in foodstuffs and diets in Sweden.

    Science.gov (United States)

    Jorhem, L; Haegglund, G

    1992-01-01

    The levels of aluminium have been determined in a number of individual foodstuffs on the Swedish market and in 24 h duplicate diets collected by women living in the Stockholm area. The results show that the levels in most foods are very low and that the level in vegetables can vary by a factor 10. Beverages from aluminium cans were found to have aluminium levels not markedly different from those in glass bottles. Based on the results of the analysis of individual foods, the average Swedish daily diet was calculated to contain about 0.6 mg aluminium, whereas the mean content of the collected duplicate diets was 13 mg. A cake made from a mix containing aluminium phosphate in the baking soda was identified as the most important contributor of aluminium to the duplicate diets. Tea and aluminium utensils were estimated to increase the aluminium content of the diets by approximately 4 and 2 mg/day, respectively. The results also indicate that a considerable amount of aluminium must be introduced from other sources. PMID:1542992

  17. Indium(III) and Gallium(III) phthalocyanines-based nanohybrid materials for optical limiting

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Huili; Li, Shuai [Key Lab for Adv. Mater., Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237 (China); Wang, Jun, E-mail: jwang@siom.ac.cn [Key Lab of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China); Blau, Werner J., E-mail: wblau@tcd.ie [School of Physics and the Centre for Research on Adaptative Nanostructures and Nanodevices(CRANN), Trinity College Dublin, Dublin 2 (Ireland); Chen, Yu, E-mail: chentangyu@yahoo.com [Key Lab for Adv. Mater., Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237 (China)

    2012-11-15

    Linear and nonlinear optical properties of a phthalocyanine (Pc)-based nanohybrid material PCIGS [Cu{sub 2}(tBu{sub 4}PcGa)(tBu{sub 4}PcIn)S{sub 2}TPP{sub 2}] are described. The overall aggregation of phthalocyanines in poly(methylmethacrylate) (PMMA) films was evident, which is indicated by the broadening of linear spectra in the Q-band region and the shift of wavelength. Upon excitation with nanosecond laser pulse at 355 nm, the transient absorption band appeared at about 500 nm is attributed to the triplet-triplet absorption of the Pcs. For PCIGS and its starting materials tBu{sub 4}PcGaCl and tBu{sub 4}PcInCl, all Z-scans exhibit a decrease in transmittance about the focus typical of an induced positive nonlinear absorption of incident light. The absorption mechanism is due to population of excited states through a multi-step nonlinear absorption. When these Pc compounds were embedded into a commercially available polymer PMMA, all the Pc/PMMA composites display much larger nonlinear absorption coefficient and lower saturable fluence for optical limiting when compared to the same Pc molecules in solution. However, in contrast to tBu{sub 4}PcGaCl and tBu{sub 4}PcInCl, PCIGS displayed decreased optical limiting response, possibly due to competing electron accepting processes in the In and Ga metals, and the highly ordered structure of the PCIGS complex itself. -- Highlights: Black-Right-Pointing-Pointer The {alpha}{sub 0} values of PCIGS in the solid state is 150 times that in the dilute solution. Black-Right-Pointing-Pointer All the Pc/PMMA composites display lower saturable fluence for optical limiting. Black-Right-Pointing-Pointer PCIGS showed decreased OL responses when compared to tBu{sub 4}PcMCl (M = Ga, In).

  18. Efficiency droop in indium gallium nitride light emitters: An introduction to photon quenching processes

    Science.gov (United States)

    Sarkissian, Raymond

    This thesis contains work from two separate projects, a study of the efficiency of light emitting diodes, and a tapered-fiber approach to photonic crystal integrated photonics. The first part of this thesis describes an experimental investigation of the quantum efficiency of InGaN-based light emitters. Blue and Green LEDs that utilize InGaN quantum wells for their active medium suffer from a reduction in efficiency with increasing bias. This phenomenon is called efficiency droop. In this thesis experimental evidence for significant quenching of photon population in InGaN is presented and its relevance to the efficiency droop problem in InGaN-based light emitting structures is discussed. An equilibrium rate equation model is set up to demonstrate that radiative efficiency for this loss mechanism not only has a similar dependence on carrier density as Auger recombination process, but it also possesses the right order of magnitude making it difficult to distinguish between the two and possibly leading to errors in interpretation. The impact of photon quenching processes on device performance is emphasized by demonstrating loss of efficiency for spectral regions where there is experimental evidence for photon quenching. We have observed this phenomenon for both c-plane and m-plane light emitting structures. Both structures exhibit droop-like behavior for spectral regions where there is evidence for photon quenching. We have also observed and characterized the dynamical Stark effect for an m-plane light emitter considered in this manuscript. Our results revealed localization centers with a corresponding band-edge energy of 388nm and an excitonic binding energy of 17.81mev. Furthermore, fabrication of a photonic crystal waveguide fiber taper coupler is demonstrated with a peak coupling efficiency of 97 %. All four ports of the device are accessible providing an opportunity for investigation of simultaneous interaction of different light sources inside the photonic crystal cavity. A numerical model is set forth to analyze such devices with an excellent agreement with the experimental data. One important result of that theory is the ability to experimentally extract the phase contribution of optical resonators that employ periodic structures such as photonic crystal cavities. This device has also been used to demonstrate all-optical nonlinear shift and bleaching of cavity resonances via non-degenerate two photon absorption, non-degenerate Kerr mechanism, free carrier absorption, and free carrier plasma effects. As the response time of two photon processes are very fast, about 10 fs, this device can be used in ultrafast low energy all optical switching applications.

  19. Size-effects in indium gallium arsenide nanowire field-effect transistors

    Science.gov (United States)

    Zota, Cezar B.; Lind, E.

    2016-08-01

    We fabricate and analyze InGaAs nanowire MOSFETs with channel widths down to 18 nm. Low-temperature measurements reveal quantized conductance due to subband splitting, a characteristic of 1D systems. We relate these features to device performance at room-temperature. In particular, the threshold voltage versus nanowire width is explained by direct observation of quantization of the first sub-band, i.e., band gap widening. An analytical effective mass quantum well model is able to describe the observed band structure. The results reveal a compromise between reliability, i.e., VT variability, and on-current, through the mean free path, in the choice of the channel material.

  20. The role of bone scanning, gallium and indium imaging in infection

    International Nuclear Information System (INIS)

    Nuclear medicine studies have considerable value in diagnosing infectious conditions in the skeleton. In this chapter the authors discuss acute infections of bone and joints separately. The section on acute osteomyelitis covers radiopharmaceuticals, methods, experimental models and the results of clinical series. Acute infections of joints is discussed with attention to radiopharmaceuticals, methods and results. The diagnosis of acute infection is prosthetic joints is treated separately. The evaluation of chronic bone infections is described briefly

  1. X-Ray Diffraction Analysis on Gallium-Indium Interdiffusion in Quantum Dot Superlattices

    Institute of Scientific and Technical Information of China (English)

    汪辉; 封松林; 徐世杰; 李晴

    2001-01-01

    Thermal-induced interdiffusion in InAs/GaAs quantum dot superlattices is studied by high-resolution x-raydiffraction rocking curve and photoluminescence techniques. With increasing annealing temperatures, up to300meV a blueshift of the emission peak position and down to 16.6meV a narrowing of the line width are foundin the photoluminescence spectra, and respective intensity of the higher-order satellite peaks to lower-order onesin the x-ray rocking curves decreases. Dynamical theory is employed to simulate the measured x-ray diffractiondata. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness and stress variations caused by interdiffusion are taken into account. It is found that the significantIn-Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The estimated diffusion coefficient is1.8 × 10-17cm2.s-1 at 650 ℃, 3.2 × 10-17cm2·s-1 at 750 ℃, and 1.2 × 10-14 cm2.s-1 at 850℃.

  2. Ellipsometry study of process deposition of amorphous Indium Gallium Zinc Oxide sputtered thin films

    International Nuclear Information System (INIS)

    This paper reports on an InGaZnO optical study by spectrometric ellipsometry. First of all, the fitting results of different models and different structures are analysed to choose the most appropriate model. The Tauc–Lorentz model is suitable for thickness measurements but a more complex model allows the refractive index and extinction coefficient to be extracted more accurately. Secondly, different InGaZnO process depositions are carried out in order to investigate stability, influence of deposition time and uniformity. Films present satisfactory optical stability over time. InGaZnO optical property evolution as a function of deposition time is related to an increase in temperature. To understand the behaviour of uniformity, mapping measurements are correlated to thin film resistivity. Results show that temperature and resputtering are the two phenomena that affect IGZO uniformity. - Highlights: • Model and structure are investigated to fit IGZO ellipsometric angles. • Maximum refractive index rises with substrate temperature and thus deposition time. • Resputtering leads to inhomogeneity in IGZO electrical and optical properties

  3. Targeting radiopharmaceuticals: comparative biodistribution studies of gallium and indium complexes of multidentate ligands

    Energy Technology Data Exchange (ETDEWEB)

    Mathias, C.J.; Welch, M.J.; Green, M.A.; Thomas, J.A.; Wade, K.R.; Yizhen Sun; Martell, A.E.

    1988-01-01

    New multidentate ligands with structures similar to N,N'-bis(2-hydroxybenzyl)ethylenediamine-N,N'-diacetic acid (HBED) and N,N'-bis(pyridoxyl)ethylenediamine-N,N'-diacetic acid (PLED) were synthesized. The in vitro lipophilicity, electrophoretic behavior, and the in vivo biodistribution were studied for the /sup 111/In- and sup(67,68)Ga-complexes of N,N'-bis(2-hydroxy-3,5-dimethylbenzyl)ethylenediamine-N,N'-diacetic acid (Me/sub 4/HBED); N,N'-bis(5-t-butyl-2-hydroxy-3-methylbenzyl)ethylenediamine-N,N'-diacetic acid (t-butyl HBED); N,N'-bis(2-hydroxy-5-sulfobenzyl)ethylenediamine-N,N'diacetic acid (SHBED); N,N'-bis(2-hydroxy-3,5-dimethylbenzyl)ethylenediamine-N-(2-hydroxyethyl)-N'-acetic acid (HBMA); and N,N'-bis(deoxypyridoxyl)ethylenediamine-N,N'-diacetic acid (DPLED). the biodistribution of the radiometal complexes were carried out in rats and an imaging study was performed in a non-human primate. The rapid clearance of the lipophilic complexes from blood and through the hepatobiliary system was easily demonstrated; as well, the hydrophilic complexes were cleared rapidly through the urinary tract. Positron emission tomographic images were generated from a study in a primate after administration of /sup 68/Ga-t-butyl HBED. These images demonstrate the efficient liver accumulation and rapid hepatobiliary clearance (< 1 h) and differentiate images of the liver and gall bladder.

  4. Evaluation of pled as a chelating ligand for the preparation of gallium and indium radiopharmaceuticals

    Energy Technology Data Exchange (ETDEWEB)

    Green, M.A.; Mathias, C.J.; Welch, M.J.; Taylor, P.; Martell, A.E.

    1985-05-01

    The sexadentate ligand, N,N'-dipyridoxyl-ethylenediamine-N,N'-diacetic acid (PLED), has been shown (Inorg. Chem. 23:1188-1192, 1984) to bind the Ga(III) and In(III) ions with very high affinity (log K = 36.35 and 36.89, respectively). The Ga-68 and In-111 complexes of PLED were prepared and complex formation verified by paper chromatography. Paper electrophoresis using 1 M pH 7.35 HEPES buffer as electrolyte showed single radioactive peaks for In-111 PLED, In-111 EDTA, and In-111 HEDTA, all of which migrated towards the anode. The biodistributions of Ga-68 PLED and In-111 PLED were determined following intravenous injection into rats. The Ga-68 and In-111 complexes behaved identically and were rapidly cleared from the blood via the kidneys into the urine. Paper chromatography suggests that the complexes are excreted intact. At 14 minutes post-injection, 8% of the injected dose was found in the blood, 5% in the kidneys, and 48% in the bladder and urine. At 1 hour, 2% of the dose remained in the blood, 1.5% in the kidneys and 86% in the bladder and urine. Gamma images showed a similar biodistribution and rate of clearance following injection of Ga-68 PLED or In-111 PLED into a stump-tailed macque.

  5. Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Ultraviolet Illumination

    Science.gov (United States)

    Lan-Feng, Tang; Hai, Lu; Fang-Fang, Ren; Dong, Zhou; Rong, Zhang; You-Dou, Zheng; Xiao-Ming, Huang

    2016-03-01

    Not Available Supported by the Key Industrial R&D Program of Jiangsu Province under Grand No BE2015155, the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the Fundamental Research Funds for the Central Universities under Grant No 021014380033.

  6. Ellipsometry study of process deposition of amorphous Indium Gallium Zinc Oxide sputtered thin films

    Energy Technology Data Exchange (ETDEWEB)

    Talagrand, C., E-mail: talagrand@emse.fr [Ecole des Mines de Saint-Etienne CMP-GC, Dept PS2, Gardanne, 880 route de Mimet (France); Boddaert, X. [Ecole des Mines de Saint-Etienne CMP-GC, Dept PS2, Gardanne, 880 route de Mimet (France); Selmeczi, D.G.; Defranoux, C. [Semilab Semiconductor Physics Laboratory Co. Ltd., Budapest, 1117 (Hungary); Collot, P. [Ecole Nationale Supérieure d' Arts et Métiers ParisTech, Aix-en-Provence, 2 cours des Arts et Métiers (France)

    2015-09-01

    This paper reports on an InGaZnO optical study by spectrometric ellipsometry. First of all, the fitting results of different models and different structures are analysed to choose the most appropriate model. The Tauc–Lorentz model is suitable for thickness measurements but a more complex model allows the refractive index and extinction coefficient to be extracted more accurately. Secondly, different InGaZnO process depositions are carried out in order to investigate stability, influence of deposition time and uniformity. Films present satisfactory optical stability over time. InGaZnO optical property evolution as a function of deposition time is related to an increase in temperature. To understand the behaviour of uniformity, mapping measurements are correlated to thin film resistivity. Results show that temperature and resputtering are the two phenomena that affect IGZO uniformity. - Highlights: • Model and structure are investigated to fit IGZO ellipsometric angles. • Maximum refractive index rises with substrate temperature and thus deposition time. • Resputtering leads to inhomogeneity in IGZO electrical and optical properties.

  7. Amorphous indium gallium zinc oxide thin film grown by pulse laser deposition technique

    Science.gov (United States)

    Mistry, Bhaumik V.; Joshi, U. S.

    2016-05-01

    Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10-3 V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×1018 cm3, while the Hall mobility of the IGZO thin film was 16 cm2 V-1S-1.

  8. Thermodynamics of reaction of praseodymium with gallium-indium eutectic alloy

    OpenAIRE

    Melchakov, S. Y.; V. A. Ivanov; Yamshchikov, L. F.; Volkovich, V. A.; Osipenko, A. G.; Kormilitsyn, M. V.

    2013-01-01

    Thermodynamic properties of Ga-In eutectic alloys saturated with praseodymium were determined for the first time employing the electromotive force method. The equilibrium potentials of the Pr-In alloys saturated with praseodymium (8.7-12.1 mol.% Pr) and Pr-Ga-In alloys (containing 0.0012-6.71 mol.% Pr) were measured between 573-1073 K. Pr-In alloy containing solid PrIn3 with known thermodynamic properties was used as the reference electrode when measuring the potentials of ternary Pr-In-Ga al...

  9. Dual-band technology on indium gallium arsenide focal plane arrays

    Science.gov (United States)

    Dixon, Peter; Hess, Cory D.; Li, Chuan; Ettenberg, Martin; Trezza, John

    2011-06-01

    While InGaAs-based SWIR imaging technology has been improved dramatically over the past 10 years, the motivation remains to reduce Size Weight and Power (SWaP) for applications in Intelligence Surveillance and Reconnaissance (ISR). Goodrich ISR Systems, Princeton (Sensors Unlimited, Inc.) has continued to improve detector sensitivity. Additionally, SUI is working jointly with DRS-RSTA to develop innovative techniques for manufacturing dual-band focal planes to provide next generation technology for not only reducing SWaP for SWIR imagers, but also to combine imaging solutions for providing a single imager for Visible Near-SWIR (VNS) + LW imaging solutions. Such developments are targeted at reducing system SWaP, cost and complexity for imaging payloads on board UASs as well as soldier deployed systems like weapon sights. Our motivation is to demonstrate capability in providing superior image quality in fused LWIR and SWIR imaging systems, while reducing the total system SWaP and cost by enabling Short Wave and Thermal imaging in a single uncooled imager. Under DARPA MTO awarded programs, a LW bolometer (DRS-RSTA) is fabricated on a Short Wave (SW) InGaAs Vis-SWIR (SUI-Goodrich) Imager. The combined imager is a dual-band Sensor-Chip Assembly which is capable of imaging in VIS-SWIR + LW. Both DRS and Goodrich have developed materials and process enhancements to support these dual-band platform investigations. The two imagers are confocal and coaxial with respect to the incident image plane. Initial work has completed a single Read Out Integrated Circuit (ROIC) capable of running both imagers. The team has hybridized InGaAs Focal planes to 6" full ROIC wafers to support bolometer fabrication onto the SW array.

  10. Common features of gallium perovskites

    Energy Technology Data Exchange (ETDEWEB)

    Aleksiyko, R.; Berkowski, M.; Fink-Finowicki, J. [Polska Akademia Nauk, Warsaw (Poland). Inst. Fizyki; Byszewski, P.; Diduszko, R. [Polska Akademia Nauk, Warsaw (Poland). Inst. Fizyki; Inst. of Vacuum Technology, Warsaw (Poland); Dabrowski, B. [Northern Illinois Univ., De Kalb (United States). Dept. of Physics; Vasylechko, L.O. [Semiconductors Electronics Dept., State Univ. ' ' Lviv Politechnic' ' , Lviv (Ukraine)

    2001-07-01

    The Czochralski and floating zone methods have been used to grow single crystals of gallium perovskites solid solutions with rare earth elements La, Pr, Nd, Sm and with Sr. The structure of the crystals has been investigated by powder X-ray, synchrotron radiation and neutron diffraction methods over a wide temperature range. The unit cell volume at room temperature varies from approximately 228 to 236 A{sup 3} in Sm{sub 0.75}Nd{sub 0.25}GaO{sub 3} and La{sub 0.88}Sr{sub 0.12}GaO{sub 3-{delta}}, respectively. Position of atoms in the unit cell and evolution of perovskite lattice deformation induced by continuously varying average rare earth ionic radius is discussed. The unit cell parameters including atoms positions, thermal expansion coefficients, segregation coefficients and phase transition temperature scale with the unit cell volume in all investigated crystals. All these parameters may be represented as a function of average ionic radius of rare elements, however, this value is not well determined in these compounds because of ill determined coordination number. (orig.)

  11. Studies on deep electronic levels in silicon and aluminium gallium arsenide alloys

    International Nuclear Information System (INIS)

    This thesis reports on investigations of the electrical and optical properties of deep impurity centers, related to the transition metals (TMs) Ti, Mo, W, V and Ni, in silicon. Emission rates, capture cross sections and photoionization cross sections for these impurities were determined by means of various Junction Space Charge Techniques (JSCTs), such as Deep Level Transient Spectroscopy (DLTS), dark capacitance transient and photo capacitance transient techniques. Changes in Gibbs free energy as a function of temperature were calculated for all levels. From this temperature dependence, the changes in enthalpy and entropy involved in the electron and hole transitions were deduced. The influence of high electric fields on the electronic levels in chalcogen-doped silicon were investigated using the dark capacitance transient technique. The enhancement of the electron emission from the deep centers indicated a more complex field enhancement model than the expected Poole-Frenkel effect for coulombic potentials. The possibility to determine charge states of defects using the Poole-Frenkel effect, as often suggested, is therefore questioned. The observation of a persistent decrease of the dark conductivity due to illumination in simplified AlGaAs/GaAs high Electron Mobility Transistors (HEMTs) over the temperature range 170K< T<300K is reported. A model for this peculiar behavior, based on the recombination of electrons in the two-dimensional electron gas (2DEG) located at the AlGaAs/GaAs interface with holes generated by a two-step excitation process via the deep EL2 center in the GaAs epilayer, is put forward

  12. Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide

    DEFF Research Database (Denmark)

    Taboryski, Rafael Jozef; Clausen, Thomas; Kutchinsky, jonatan;

    1997-01-01

    We have fabricated and characterized planar superconductor-semiconductor-superconductor (S-Sm-S) junctions with a high quality (i.e. low barrier) interface between an n++ modulation doped conduction layer in MBE grown GaAs and in situ deposited Al electrodes. The Schottky barrier at the S...

  13. Control of gallium incorporation in sol–gel derived CuIn{sub (1−x)}Ga{sub x}S{sub 2} thin films for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Bourlier, Yoan [Institut de Recherche sur les Composants logiciels et matériels pour l’Information et la Communication Avancée (IRCICA), CNRS USR 3380, Université Lille 1, 50 avenue Halley, 59655 Villeneuve d’Ascq CEDEX (France); Cristini Robbe, Odile [Institut de Recherche sur les Composants logiciels et matériels pour l’Information et la Communication Avancée (IRCICA), CNRS USR 3380, Université Lille 1, 50 avenue Halley, 59655 Villeneuve d’Ascq CEDEX (France); Laboratoire de Physique des Lasers, Atomes et Molécules (PhLAM), CNRS UMR 8523, Université Lille, 59655 Villeneuve d’Ascq CEDEX (France); Lethien, Christophe [Institut de Recherche sur les Composants logiciels et matériels pour l’Information et la Communication Avancée (IRCICA), CNRS USR 3380, Université Lille 1, 50 avenue Halley, 59655 Villeneuve d’Ascq CEDEX (France); Laboratoire de Physique des Lasers, Atomes et Molécules (PhLAM), CNRS UMR 8523, Université Lille, 59655 Villeneuve d’Ascq CEDEX (France); Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), CNRS UMR 8520, Avenue Poincaré, 59652 Villeneuve d’Ascq CEDEX (France); and others

    2015-10-15

    Highlights: • CuIn{sub (1−x)}Ga{sub x}S{sub 2} thin films were prepared by sol–gel process. • Evolution of lattice parameters is characteristic of a solid solution. • Optical band gap was found to be linearly dependent on the gallium rate. - Abstract: In this paper, we report the elaboration of Cu(In,Ga)S{sub 2} chalcopyrite thin films via a sol–gel process. To reach this aim, solutions containing copper, indium and gallium complexes were prepared. These solutions were thereafter spin-coated onto the soda lime glass substrates and calcined, leading to metallic oxides thin films. Expected chalcopyrite films were finally obtained by sulfurization of oxides layers using a sulfur atmosphere at 500 °C. The rate of gallium incorporation was studied both at the solutions synthesis step and at the thin films sulfurization process. Elemental and X-ray diffraction (XRD) analyses have shown the efficiency of monoethanolamine used as a complexing agent for the preparation of CuIn{sub (1−x)}Ga{sub x}S{sub 2} thin layers. Moreover, the replacement of diethanolamine by monoethanolamine has permitted the substitution of indium by isovalent gallium from x = 0 to x = 0.4 and prevented the precipitation of copper derivatives. XRD analyses of sulfurized thin films CuIn{sub (1−x)}Ga{sub x}S{sub 2,} clearly indicated that the increasing rate of gallium induced a shift of XRD peaks, revealing an evolution of the lattice parameter in the chalcopyrite structure. These results were confirmed by Raman analyses. Moreover, the optical band gap was also found to be linearly dependent upon the gallium rate incorporated within the thin films: it varies from 1.47 eV for x = 0 to 1.63 eV for x = 0.4.

  14. Aluminium exclusion and aluminium tolerance in woody plants

    OpenAIRE

    Ivano eBrunner; Christoph eSperisen

    2013-01-01

    The aluminium (Al) cation Al3+ is highly rhizotoxic and is a major stress factor to plants on acid soils, which cover large areas of tropical and boreal regions. Many woody plant species are native to acid soils and are well adapted to high Al3+ conditions. In tropical regions, both woody Al accumulator and non-Al accumulator plants occur, whereas in boreal regions woody plants are non-Al accumulators. The mechanisms of these adaptations can be divided into those that facilitate the exclusion...

  15. Fabrication of magnetic nano liquid metal fluid through loading of Ni nanoparticles into gallium or its alloy

    International Nuclear Information System (INIS)

    In this study, Ni nanoparticles were loaded into the partially oxidized gallium and its alloys to fabricate desired magnetic nanofluid. It was disclosed that the Ni nanoparticles sharply increased the freezing temperature and latent heat of the obtained magnetic nano liquid metal fluid, while the melting process was less affected. For the gallium sample added with 10 vol% coated Ni particles, a hysteresis loop was observed and the magnetization intensity decreased with the increase of the temperature. The slope for the magnetization-temperature curve within 10–30 K was about 20 times of that from 40 K to 400 K. Further, the dynamic impact experiments of striking magnetic liquid metal droplets on the magnet revealed that the regurgitating of the leading edge of the liquid disk and the subsequent wave that often occurred in the gallium-indium droplets would disappear for the magnetic fluids case due to attraction force of the magnet. - Graphical abstract: High speed videos for the impact of striking GaIn24.5 based magnetic liquid metal droplets on a magnet plate. - Highlights: • A feasible way to fabricate magnetic nano liquid metal fluid was presented. • Ni nanoparticles sharply increased freezing temperature and latent heat of magnetic nanofluid. • A hysteresis loop phenomenon was observed for the magnetic nanofluid. • Temperature dependent magnetization spanning from 10 K to 400 K was measured. • Impact phenomena of striking magnetic droplets on magnet were disclosed

  16. The Soviet American Gallium Experiment (SAGE)

    International Nuclear Information System (INIS)

    This paper reports on a radiochemical experiment using the reaction νe + 71Ga → 71Ge + e - to determine the integral flux of low-energy neutrinos from the sun which is currently under preparation at the Baksan Neutrino Observatory in the USSR. Measurements are scheduled to commence by late 1988 using ∼30 tonnes of metallic gallium. With this amount of gallium it should be possible to obtain a fractional statistical accuracy of 12-15%, after one year (assuming the standard solar model neutrino flux). While initial measurements are in progress, installation of the remaining 30 tonnes of gallium will proceed in order to perform the full 60 tonne experiment

  17. Gallium-67 scanning of malignant lymphomas

    International Nuclear Information System (INIS)

    The presence of a residual mass is a frequent and difficult problem in the treatment of Hodgkin's or non-Hodgkin's lymphoma: since it is of major importance to determine whether the lesion is a fibrous mass or a still progressing tumour requiring additional therapy. Gallium-67 scanning, performed in a series of 52 patients, provides an answer to this question since there is an excellent correlation between gallium uptake by the tumoral masses and their progressiveness. Magnetic resonance imaging was carried out in half of our patients: the finding of a low-intensity signal on T2-weighted sequences proved that the residual mass was fibrous, whereas a high-intensity signal on T2-weighted sequences did not distinguish between fibrous and tumour masses. The priceless information provided by the simple and non invasive method that is gallium scanning is extremely useful to evaluate the extension of lymphomas and to determine whether residual masses are tumoral or fibrous

  18. Gallium-67 scintigraphy in acute pancreatitis

    Energy Technology Data Exchange (ETDEWEB)

    Al-Suhaili, A.R.; Bahar, R.; Nawaz, K.; Higazy, E.; Wafai, I.; Nema, T.A.; Eriksson, S.; Abdel-Dayem, H.M.

    1988-04-01

    Acute pancreatitis is a serious surgical problem with a high incidence of mortality. Both ultrasound and X-ray CT have problems in identifying the extent and severity of the disease and the response to therapy. /sup 67/Ga-citrate has been used in 21 patients with clinically diagnosed acute pancreatitis: 9 patients had X-ray CT and 15 had US examination. Gallium scans were more sensitive than X-ray CT and US in detecting the extent and severity of acute pancreatitis. In addition, gallium was helpful to monitor the response to therapy when the scan was repeated at various intervals in three patients. A subtraction technique using /sup 99m/Tc-tin colloid and /sup 67/Ga-citrate was helpful to mask the liver uptake of gallium and clearly identify the extent of acute pancreatitis.

  19. Fabrication methods and applications of microstructured gallium based liquid metal alloys

    Science.gov (United States)

    Khondoker, M. A. H.; Sameoto, D.

    2016-09-01

    This review contains a comparative study of reported fabrication techniques of gallium based liquid metal alloys embedded in elastomers such as polydimethylsiloxane or other rubbers as well as the primary challenges associated with their use. The eutectic gallium–indium binary alloy (EGaIn) and gallium–indium–tin ternary alloy (galinstan) are the most common non-toxic liquid metals in use today. Due to their deformability, non-toxicity and superior electrical conductivity, these alloys have become very popular among researchers for flexible and reconfigurable electronics applications. All the available manufacturing techniques have been grouped into four major classes. Among them, casting by needle injection is the most widely used technique as it is capable of producing features as small as 150 nm width by high-pressure infiltration. One particular fabrication challenge with gallium based liquid metals is that an oxide skin is rapidly formed on the entire exposed surface. This oxide skin increases wettability on many surfaces, which is excellent for keeping patterned metal in position, but is a drawback in applications like reconfigurable circuits, where the position of liquid metal needs to be altered and controlled accurately. The major challenges involved in many applications of liquid metal alloys have also been discussed thoroughly in this article.

  20. Aging of coprecipitated gallium and gadolinium hydroxides

    International Nuclear Information System (INIS)

    The X-ray graphical and X-ray spectroscopic methods have been used to investigate aging under parent solution at 25, 50, 90 deg and thermolysis in the 250-1000 deg range of mixed gallium and gadolinium hydroxides coprecipitated at pH 8.6 by ammonium hydroxide from the nitrate solution (Gd:Ga=3:5). Hydroxopolycompounds With garnet prestructure are stated to be precipitated under the mentioned conditions. Their dehydration and crystallization of gallium-gadolinium garnet take place during aging under parent solution and thermolysis

  1. Four Terminal Gallium Nitride MOSFETs

    Science.gov (United States)

    Veety, Matthew Thomas

    All reported gallium nitride (GaN) transistors to date have been three-terminal devices with source, drain, and gate electrodes. In the case of GaN MOSFETs, this leaves the bulk of the device at a floating potential which can impact device threshold voltage. In more traditional silicon-based MOSFET fabrication a bulk contact can be made on the back side of the silicon wafer. For GaN grown on sapphire substrates, however, this is not possible and an alternate, front-side bulk contact must be investigated. GaN is a III-V, wide band gap semiconductor that as promising material parameters for use in high frequency and high power applications. Possible applications are in the 1 to 10 GHz frequency band and power inverters for next generation grid solid state transformers and inverters. GaN has seen significant academic and commercial research for use in Heterojunction Field Effect Transistors (HFETs). These devices however are depletion-mode, meaning the device is considered "on" at zero gate bias. A MOSFET structure allows for enhancement mode operation, which is normally off. This mode is preferrable in high power applications as the device has lower off-state power consumption and is easier to implement in circuits. Proper surface passivation of seminconductor surface interface states is an important processing step for any device. Preliminary research on surface treatments using GaN wet etches and depletion-mode GaN devices utilizing this process are discussed. Devices pretreated with potassium pursulfate prior to gate dielectric deposition show significant device improvements. This process can be applied to any current GaN FET. Enhancement-mode GaN MOSFETs were fabricated on magnesium doped p-type Wurtzite gallium nitride grown by Metal Organic Chemical Vapor Deposition (MOCVD) on c-plane sapphire substrates. Devices utilized ion implant source and drain which was activated under NH3 overpressure in MOCVD. Also, devices were fabricated with a SiO2 gate dielectric

  2. Aluminium and nickel in human albumin solutions

    DEFF Research Database (Denmark)

    Gammelgaard, Bente; Sandberg, E

    1989-01-01

    Five different brands of commercially available human albumin solutions for infusion were analysed for their aluminium and nickel contents by atomic absorption spectrometry. The aluminium concentrations ranged from 12 micrograms/l to 1109 micrograms/l and the nickel concentrations ranged from 17...

  3. Preparation of aluminium lakes by electrocoagulation

    Directory of Open Access Journals (Sweden)

    Prapai Pradabkham

    2008-07-01

    Full Text Available Aluminium lakes have been prepared by electrocoagulation employing aluminium as electrodes. The electrocoagulation is conducted in an aqueous alcoholic solution and is completed within one hour. The dye content in the lake ranges approximately between 4-32%.

  4. Gallium-67 scintigraphy: a cornerstone in functional imaging of lymphoma

    Energy Technology Data Exchange (ETDEWEB)

    Even-Sapir, Einat [Department of Nuclear Medicine, Sourasky Medical Center and Sackler School of Medicine, Tel-Aviv University, Tel Aviv (Israel); Israel, Ora [Department of Nuclear Medicine, Rambam Medical Center and Faculty of Medicine, Technion-Israel Institute of Technology, 35254, Haifa (Israel)

    2003-06-01

    Until recently, gallium-67 scintigraphy (GS) has been the best available functional imaging modality for evaluating patients with non-Hodgkin's lymphoma (NHL) and Hodgkin's disease (HD). The diagnostic accuracy of GS in detecting lymphoma is based on optimisation of the imaging protocol, knowledge of potential physiological and benign sites of {sup 67}Ga uptake, and the Ga avidity characteristics of the individual lymphoma. As {sup 67}Ga is a tumour viability agent, the role of GS is primarily at follow-up. A residual mass persisting on CT after treatment poses a common clinical dilemma: it may indicate the presence of viable lymphoma, which requires further treatment, or it can be benign, consisting of only fibrotic and necrotic tissues. GS can successfully differentiate between these conditions. Routine follow-up with GS may allow early diagnosis of recurrence and early institution of treatment. Reversion of a positive GS to a negative test, and the rapidity with which this occurs has a high predictive value for the outcome of the individual patient. Lymphoma showing a normal GS early during treatment has a better prognosis than lymphoma with persistence of pathological findings. Other tumour-seeking single-photon emitting agents, such as thallium-201, technetium-99m methoxyisobutylisonitrile and indium-111 octreotide, have been investigated in lymphoma, primarily as an alternative to GS in specific clinical settings, but are of limited value. The role of radioimmunoscintigraphy is gaining importance in conjunction with radioimmunotherapy. Fluorine-18 fluorodeoxyglucose (FDG) imaging of lymphoma using either dedicated or camera-based PET systems is gradually replacing GS for assessment of lymphoma. FDG overcomes some of the limitations of GS while sharing its tumour viability characteristics. The extensive clinical knowledge and experience accumulated over three decades with GS in lymphoma provides a solid background as well as a model for the

  5. A Kinetic Study of Indium Leaching from Indium-Bearing Zinc Ferrite Under Microwave Heating

    Science.gov (United States)

    Zhang, Linye; Mo, Jiamei; Li, Xuanhai; Pan, Liuping; Liang, Xinyuan; Wei, Guangtao

    2013-12-01

    To obtain information about leaching reaction and kinetics of indium from indium-bearing materials under microwave heating (MH), leaching of indium from indium-bearing zinc ferrite (IBZF) has been investigated. IBZF samples under MH and under conventional heating (CH) were studied by X-ray diffraction and specific surface area. Compared with that of CH, the effect of MH and the effects of various control parameters on indium leaching were studied. The results showed that compared with CH, MH enhanced the indium leaching from IBZF and increased the leaching rate. The leaching behavior of indium from IBZF was analyzed by unreacted shrinking core model, and the regression of kinetic equations showed that leaching of indium from IBZF obeyed the model very well. The activation energies under MH and under CH were 77.374 kJ/mol and 53.555 kJ/mol, respectively; the ratio of frequency factor K 0(MH)/ K 0(CH) was 10,818.36. The activation mechanism involved in leaching of indium under MH was mainly the increase of reactant energy and effective collision, which caused by the thermal and nonthermal microwave effect. Compared with the activation energy, the effective collision played a more important role in the acceleration of leaching of indium.

  6. Recent developments in advanced aircraft aluminium alloys

    International Nuclear Information System (INIS)

    Highlights: • To compete with composites, performance of aluminium alloys should be increased. • Al–Li alloys have higher strength, fracture and fatigue/corrosion resistance. • Improvements of aerospace Al alloys are due to optimised solute content and ratios. • In selecting new materials, there should be no reduction in the level of safety. • The use of hybrid materials could provide additional opportunities for Al alloys. - Abstract: Aluminium alloys have been the primary material for the structural parts of aircraft for more than 80 years because of their well known performance, well established design methods, manufacturing and reliable inspection techniques. Nearly for a decade composites have started to be used more widely in large commercial jet airliners for the fuselage, wing as well as other structural components in place of aluminium alloys due their high specific properties, reduced weight, fatigue performance and corrosion resistance. Although the increased use of composite materials reduced the role of aluminium up to some extent, high strength aluminium alloys remain important in airframe construction. Aluminium is a relatively low cost, light weight metal that can be heat treated and loaded to relatively high level of stresses, and it is one of the most easily produced of the high performance materials, which results in lower manufacturing and maintenance costs. There have been important recent advances in aluminium aircraft alloys that can effectively compete with modern composite materials. This study covers latest developments in enhanced mechanical properties of aluminium alloys, and high performance joining techniques. The mechanical properties on newly developed 2000, 7000 series aluminium alloys and new generation Al–Li alloys are compared with the traditional aluminium alloys. The advantages and disadvantages of the joining methods, laser beam welding and friction stir welding, are also discussed

  7. Long-chain amine-templated synthesis of gallium sulfide and gallium selenide nanotubes

    Science.gov (United States)

    Seral-Ascaso, A.; Metel, S.; Pokle, A.; Backes, C.; Zhang, C. J.; Nerl, H. C.; Rode, K.; Berner, N. C.; Downing, C.; McEvoy, N.; Muñoz, E.; Harvey, A.; Gholamvand, Z.; Duesberg, G. S.; Coleman, J. N.; Nicolosi, V.

    2016-06-01

    We describe the soft chemistry synthesis of amine-templated gallium chalcogenide nanotubes through the reaction of gallium(iii) acetylacetonate and the chalcogen (sulfur, selenium) using a mixture of long-chain amines (hexadecylamine and dodecylamine) as a solvent. Beyond their role as solvent, the amines also act as a template, directing the growth of discrete units with a one-dimensional multilayer tubular nanostructure. These new materials, which broaden the family of amine-stabilized gallium chalcogenides, can be tentatively classified as direct large band gap semiconductors. Their preliminary performance as active material for electrodes in lithium ion batteries has also been tested, demonstrating great potential in energy storage field even without optimization.We describe the soft chemistry synthesis of amine-templated gallium chalcogenide nanotubes through the reaction of gallium(iii) acetylacetonate and the chalcogen (sulfur, selenium) using a mixture of long-chain amines (hexadecylamine and dodecylamine) as a solvent. Beyond their role as solvent, the amines also act as a template, directing the growth of discrete units with a one-dimensional multilayer tubular nanostructure. These new materials, which broaden the family of amine-stabilized gallium chalcogenides, can be tentatively classified as direct large band gap semiconductors. Their preliminary performance as active material for electrodes in lithium ion batteries has also been tested, demonstrating great potential in energy storage field even without optimization. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01663d

  8. Shot peening of aluminium alloys

    International Nuclear Information System (INIS)

    Shot peening is a process of cold-hammering where a metallic surface is pelted with spherical grains. Each grain bumping into the surface acts as a hammer head and creates a small crater. The overlapping of these craters produces a residual compression layer just underneath the surface. It is well known that cracks cannot spread in a compression zone. In most cases of fatigue rupture and stress corrosion cracks propagate from the surface towards the inside so shot peening allows a longer lifetime of castings. Moreover most materials present a better resistance due to the cold-hammering effect of shot peening. Metallic surfaces can be treated in workshops or directly on site. Typical pieces that undergo shot peening on site are storing tanks, gas and steam turbines, tubes of steam generators and piping in oil or nuclear or chemical industries. This article describes shot peening from a theoretical and general point of view and presents the application to aluminium-lithium alloys. In the case of aluminium alloys shot peening can be used to shape the piece (peen-forming). (A.C.)

  9. Method for aluminium dross utilization

    International Nuclear Information System (INIS)

    A new hydrometallurgical method has been developed for metal aluminum utilization from secondary aluminum dross. Secondary aluminum dross is a powder product with an average of 35% aluminium content (below 1mm). It is waste from primary aluminum dross pyrometallurgical flux less treatment in rotary DC electric arc furnace. This method is based on aluminum leaching in copper chloride water solution. As a result an aluminum oxychloride solution and solids, consisting of copper and oxides are obtained. In order to copper chloride solution regenerate hydrochloric acid is added to the solids. The process is simple, quick, economic and safe. The aluminum oxychloride solution contains 56 g/l Al2O3. The molar ratios are Al:Cl=0,5; OH:Al=1. The solution has 32 % basicity and 1,1 g/cm3 density. For increasing the molar ratio of aluminium to chlorine aluminum hydroxide is added to this solution at 80oC. Aluminum hydroxide is the final product from the secondary aluminum dross alkaline leaching. As a result aluminum oxychloride solution of the following composition is prepared: Al2O3 - 180 g/l; Al:Cl=1,88; OH:Al=4,64; basicity 82%; density 1,22 g/cm3, pH=4 -4,5. Aluminum oxychloride solution produced by means of this method can be used in potable and wastewater treatment, paper making, in refractory mixture as a binder etc. (Original)

  10. Gallium-positive Lyme disease myocarditis

    Energy Technology Data Exchange (ETDEWEB)

    Alpert, L.I.; Welch, P.; Fisher, N.

    1985-09-01

    In the course of a work-up for fever of unknown origin associated with intermittent arrhythmias, a gallium scan was performed which revealed diffuse myocardial uptake. The diagnosis of Lyme disease myocarditis subsequently was confirmed by serologic titers. One month following recovery from the acute illness, the abnormal myocardial uptake completely resolved.

  11. Gallium-positive Lyme disease myocarditis

    International Nuclear Information System (INIS)

    In the course of a work-up for fever of unknown origin associated with intermittent arrhythmias, a gallium scan was performed which revealed diffuse myocardial uptake. The diagnosis of Lyme disease myocarditis subsequently was confirmed by serologic titers. One month following recovery from the acute illness, the abnormal myocardial uptake completely resolved

  12. Gallium nitride junction field-effect transistor

    Science.gov (United States)

    Zolper, John C.; Shul, Randy J.

    1999-01-01

    An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

  13. Gallium Nitride Crystals: Novel Supercapacitor Electrode Materials.

    Science.gov (United States)

    Wang, Shouzhi; Zhang, Lei; Sun, Changlong; Shao, Yongliang; Wu, Yongzhong; Lv, Jiaxin; Hao, Xiaopeng

    2016-05-01

    A type of single-crystal gallium nitride mesoporous membrane is fabricated and its supercapacitor properties are demonstrated for the first time. The supercapacitors exhibit high-rate capability, stable cycling life at high rates, and ultrahigh power density. This study may expand the range of crystals as high-performance electrode materials in the field of energy storage. PMID:27007502

  14. Ammonothermal Growth of Gallium Nitride

    Science.gov (United States)

    Pimputkar, Siddha

    Bulk, single crystal Gallium Nitride (GaN) crystals are essential for enabling high performance electronic and optoelectronic devices by providing arbitrarily oriented, high quality, large, single crystal GaN substrates. Methods of producing single crystals of sufficient size and quality at a rate that would enable successful commercialization has been a major focus for research groups and companies worldwide. Recent advances have demonstrated remarkable improvements, though high cost and lack of high volume production remain key challenges. Major investments in bulk GaN growth were made at UCSB with particular focus on the ammonothermal method. The existing lab was upgraded and a new facility was designed and built with improved experimental setups for ammonothermal growth of GaN. The facilities can simultaneously operate up to 15 reactors of differing designs and capabilities with the ability to grow crystals up to 2 inches in diameter. A novel in-situ technique was devised to investigate the growth chemistry which occurs at typical operating conditions of 3,000 atm and 600 °C. Improvements in ammonothermal GaN include improved growth rates for c-plane by a factor of four to 344 μm/day with an overall record growth rate of 544 μm/day achieved for the (112¯2) plane. Crystal qualities comparable to that of the seed crystal were achieved. Impurity concentrations for transition metals were consistently reduced by a factor of 100 to concentrations below 1017 atoms/cm3. Optical transparency was improved by significantly reducing the yellow coloration typically seen for ammonothermal GaN. Single crystal GaN was successfully grown on large seeds and a 1 inch x ½ inch x ½ inch GaN crystal was demonstrated. To better understand the growth chemistry, models were created for the decomposition of ammonia under growth conditions, with initial experiments performed using the designed in-situ setup to verify the model's accuracy. To investigate the surface morphology and

  15. Difficult diagnosis and localization of focal nesidioblastosis: clinical implications of 68Gallium-DOTA-D-Phe1-Tyr3-octreotide PET scanning

    Science.gov (United States)

    Kim, Jae Ri; Shin, Yong Chan; Cho, Young Min; Kim, Hongbeom; Kwon, Wooil; Han, Young Min; Kim, Sun-Whe

    2016-01-01

    Focal nesidioblastosis is a rare cause of endogenous hyperinsulinemic hypoglycemia in adults. Because it is difficult to localize and detect with current imaging modalities, nesidioblastosis is challenging for biliary-pancreatic surgeons. 68Gallium-DOTA-D-Phe1-Tyr3-octreotide PET scanning and 111indium-pentetreotide diethylene triamine pentaacetic acid octreotide scanning may be superior to conventional imaging modalities in determining the localization of nesidioblastosis. We report the successful surgical treatment of a 54-year-old woman with focal hyperplasia of the islets of Langerhans, who experienced frequent hypoglycemic symptoms and underwent various diagnostic examinations with different results. PMID:27433465

  16. Difficult diagnosis and localization of focal nesidioblastosis: clinical implications of (68)Gallium-DOTA-D-Phe(1)-Tyr(3)-octreotide PET scanning.

    Science.gov (United States)

    Kim, Jae Ri; Jang, Jin-Young; Shin, Yong Chan; Cho, Young Min; Kim, Hongbeom; Kwon, Wooil; Han, Young Min; Kim, Sun-Whe

    2016-07-01

    Focal nesidioblastosis is a rare cause of endogenous hyperinsulinemic hypoglycemia in adults. Because it is difficult to localize and detect with current imaging modalities, nesidioblastosis is challenging for biliary-pancreatic surgeons. (68)Gallium-DOTA-D-Phe(1)-Tyr(3)-octreotide PET scanning and (111)indium-pentetreotide diethylene triamine pentaacetic acid octreotide scanning may be superior to conventional imaging modalities in determining the localization of nesidioblastosis. We report the successful surgical treatment of a 54-year-old woman with focal hyperplasia of the islets of Langerhans, who experienced frequent hypoglycemic symptoms and underwent various diagnostic examinations with different results. PMID:27433465

  17. Gallium 67 scintigraphy in glomerular disease

    Energy Technology Data Exchange (ETDEWEB)

    Bakir, A.A.; Lopez-Majano, V.; Levy, P.S.; Rhee, H.L.; Dunea, G.

    1988-12-01

    To evaluate the diagnostic usefulness of gallium 67 scintigraphy in glomerular disease, 45 patients with various glomerulopathies, excluding lupus nephritis and renal vasculitis, were studied. Persistent renal visualization 48 hours after the gallium injection, a positive scintigram, was graded as + (less than), ++ (equal to), and +++ (greater than) the hepatic uptake. Positive scintigrams were seen in ten of 16 cases of focal segmental glomerulosclerosis, six of 11 cases of proliferative glomerulonephritis, and one case of minimal change, and one of two cases of membranous nephropathy; also in three of six cases of sickle glomerulopathy, two cases of diabetic neuropathy, one of two cases of amyloidosis, and one case of mild chronic allograft rejection. The 25 patients with positive scans were younger than the 20 with negative scans (31 +/- 12 v 42 +/- 17 years; P less than 0.01), and exhibited greater proteinuria (8.19 +/- 7.96 v 2.9 +/- 2.3 S/d; P less than 0.01) and lower serum creatinine values (2 +/- 2 v 4.1 +/- 2.8 mg/dL; P less than 0.01). The amount of proteinuria correlated directly with the intensity grade of the gallium image (P less than 0.02), but there was no correlation between the biopsy diagnosis and the outcome of the gallium scan. It was concluded that gallium scintigraphy is not useful in the differential diagnosis of the glomerular diseases under discussion. Younger patients with good renal function and heavy proteinuria are likely to have a positive renal scintigram regardless of the underlying glomerulopathy.

  18. Epoxy coatings electrodeposited on aluminium and modified aluminium surfaces

    Directory of Open Access Journals (Sweden)

    Lazarević Zorica Ž.

    2002-01-01

    Full Text Available The corrosion behaviour and thermal stability of epoxy coatings electrodeposited on modified aluminum surfaces (anodized, phosphatized and chromatized-phosphatized aluminium were monitored during exposure to 3% NaCl solution, using electrochemical impedance spectroscopy (EIS and thermogravimetric analysis (TGA. Better protective properties of the epoxy coatings on anodized and chromatized-phosphatized aluminum with respect to the same epoxy coatings on aluminum and phosphatized aluminum were obtained: higher values of Rp and Rct and smaller values of Cc and Cd, from EIS, and a smaller amount of absorbed water inside the coating, from TGA. On the other hand, a somewhat lower thermal stability of these coatings was obtained (smaller values of the ipdt temperature. This behavior can be explained by the less porous structure of epoxy coatings on anodized and chromatized-phosphatized aluminum, caused by a lower rate of H2 evolution and better wet ability.

  19. Investigation of the aluminium-aluminium oxide reversible transformation as observed by hot stage electron microscopy.

    Science.gov (United States)

    Grove, C. A.; Judd, G.; Ansell, G. S.

    1972-01-01

    Thin foils of high purity aluminium and an Al-Al2O3 SAP type of alloy were oxidised in a specially designed hot stage specimen chamber in an electron microscope. Below 450 C, amorphous aluminium oxide formed on the foil surface and was first detectable at foil edges, holes, and pits. Islands of aluminium then nucleated in this amorphous oxide. The aluminium islands displayed either a lateral growth with eventual coalescence with other islands, or a reoxidation process which caused the islands to disappear. The aluminium island formation was determined to be related to the presence of the electron beam. A mechanism based upon electron charging due to the electron beam was proposed to explain the nucleation, growth, coalescence, disappearance, and geometry of the aluminium islands.

  20. Effects of aluminium surface morphology and chemical modification on wettability

    DEFF Research Database (Denmark)

    Rahimi, Maral; Fojan, Peter; Gurevich, Leonid;

    2014-01-01

    -life aluminium surfaces of different morphology: unpolished aluminium, polished aluminium, and aluminium foil, were subjected to surface modification procedures which involved the formation of a layer of hydrophilic hyperbranched polyethyleneglycol via in situ polymerization, molecular vapour deposition of a...... monolayer of fluorinated silane, and a combination of those. The effect of these surface modification techniques on roughness and wettability of the aluminium surfaces was elucidated by ellipsometry, contact angle measurements and atomic force microscopy. We demonstrated that by employing different types of...

  1. Quantification of indium in steel using PIXE

    Energy Technology Data Exchange (ETDEWEB)

    Oliver, A.; Miranda, J.; Rickards, J.; Cheang, J.C.

    1989-04-01

    The quantitative analysis of steel endodontics tools was carried out using low-energy protons (/le/ 700 keV). A computer program for a thick-target analysis which includes enhancement due to secondary fluorescence was used. In this experiment the L-lines of indium are enhanced due to the proximity of other elements' K-lines to the indium absorption edge. The results show that the ionization cross section expression employed to evaluate this magnitude is important. (orig.).

  2. Quantification of indium in steel using PIXE

    International Nuclear Information System (INIS)

    The quantitative analysis of steel endodontics tools was carried out using low-energy protons (≤ 700 keV). A computer program for a thick-target analysis which includes enhancement due to secondary fluorescence was used. In this experiment the L-lines of indium are enhanced due to the proximity of other elements' K-lines to the indium absorption edge. The results show that the ionization cross section expression employed to evaluate this magnitude is important. (orig.)

  3. Indium Single-Ion Frequency Standard

    Science.gov (United States)

    Nagourney, Warren

    2001-01-01

    A single laser-cooled indium ion is a promising candidate for an ultimate resolution optical time or frequency standard. It can be shown that single ions from group IIIA of the periodic table (indium, thallium, etc.) can have extremely small systematic errors. In addition to being free from Doppler, transit-time and collisional shifts, these ions are also quite insensitive to perturbations from ambient magnetic and electric fields (mainly due to the use of a J=0-0 transition for spectroscopy). Of all group IIIA ions, indium seems to be the most practical, since it is heavy enough to have a tolerable intercombination cooling transition rate and (unlike thallium) has transitions which are easily accessible with frequency multiplied continuous-wave lasers. A single indium ion standard has a potential inaccuracy of one part in 10(exp 18) for integration times of 10(exp 6) seconds. We have made substantial progress during the grant period in constructing a frequency standard based upon a single indium ion. At the beginning of the grant period, single indium ions were being successfully trapped, but the lasers and optical systems were inadequate to achieve the desired goal. We have considerably improved the stability of the dye laser used to cool the ions and locked it to a molecular resonance line, making it possible to observe stable cooling-line fluorescence from a single indium ion for reasonable periods of time, as required by the demands of precision spectroscopy. We have substantially improved the single-ion fluorescence signal with significant benefits for the detection efficiency of forbidden transitions using the 'shelving' technique. Finally, we have constructed a compact, efficient UV 'clock' laser and observed 'clock' transitions in single indium ions using this laser system. We will elaborate on these accomplishments.

  4. Aluminium Process Fault Detection and Diagnosis

    Directory of Open Access Journals (Sweden)

    Nazatul Aini Abd Majid

    2015-01-01

    Full Text Available The challenges in developing a fault detection and diagnosis system for industrial applications are not inconsiderable, particularly complex materials processing operations such as aluminium smelting. However, the organizing into groups of the various fault detection and diagnostic systems of the aluminium smelting process can assist in the identification of the key elements of an effective monitoring system. This paper reviews aluminium process fault detection and diagnosis systems and proposes a taxonomy that includes four key elements: knowledge, techniques, usage frequency, and results presentation. Each element is explained together with examples of existing systems. A fault detection and diagnosis system developed based on the proposed taxonomy is demonstrated using aluminium smelting data. A potential new strategy for improving fault diagnosis is discussed based on the ability of the new technology, augmented reality, to augment operators’ view of an industrial plant, so that it permits a situation-oriented action in real working environments.

  5. Deformation features of aluminium in tensile tests

    International Nuclear Information System (INIS)

    It is presented a method to analyse stress-strain curves. Plastic and elastic strains were studied. The strains were done by tensile tests in four types of materials: highly pure aluminium, pure aluminium, commercially pure aluminium and aluminium - uranium. The chemical compositions were obtained by spectroscopy analysis and neutron activation analysis. Tensile tests were carried out at three strain rates, at room temperature, 100,200, 300 and 4000C, with knives extensometer and strain-gages to studied the elastic strain region. A multiple spring model based on two springs model to analyse elastic strain caused by tests without extensometers, taking in account moduli of elasticity and, an interactive analysis system with graphic capability were developed. It was suggested a qualitative model to explain the quantized multielasticity of Bell. (M.C.K.)

  6. Photoluminescence of indium-rich copper indium sulfide quantum dots

    International Nuclear Information System (INIS)

    The enhanced photoluminescence (PL) for In-rich copper indium sulfide quantum dots (CIS QDs) was observed. The conduction electron-Cu vacancy recombination and the donor–acceptor pair (DAP) defect recombination were considered to exist in CIS QDs at the same time. The temperature-dependent PL study showed that the emission of these QDs might be mainly originated from the recombination between electrons in the quantized conduction band and holes in the copper vacancy acceptor when x was 0.500 (CuxIn1−xS). However, the temperature coefficient of PL peak position decreased when x was 0.237. That meant the DAP recombination increased in the In-rich CIS QDs. - Highlights: • The enhanced photoluminescence (PL) for In-rich CuInS2 QDs with [Cu]/[In] molar ratios of 0.31. • The conduction electron-Cu vacancy recombination and DAP were considered to exist and the temperature-independent DAP recombination was enhanced in the In-rich CuInS2 QDs

  7. Photoluminescence of indium-rich copper indium sulfide quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wenyan [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Zhang, Yu, E-mail: yuzhang@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012 (China); Zhao, Jia [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Feng, Yi; Wang, Dan; Zhang, Tieqiang; Gao, Wenzhu [State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012 (China); Chu, Hairong [Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130025 (China); Yin, Jingzhi; Wang, Yiding [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Zhao, Jun [Department of Chemistry and Physics, Louisiana State University, Shreveport, LA 71115 (United States); College of Material Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042 (China); Yu, William W., E-mail: wyu6000@gmail.com [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Department of Chemistry and Physics, Louisiana State University, Shreveport, LA 71115 (United States); College of Material Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042 (China)

    2015-06-15

    The enhanced photoluminescence (PL) for In-rich copper indium sulfide quantum dots (CIS QDs) was observed. The conduction electron-Cu vacancy recombination and the donor–acceptor pair (DAP) defect recombination were considered to exist in CIS QDs at the same time. The temperature-dependent PL study showed that the emission of these QDs might be mainly originated from the recombination between electrons in the quantized conduction band and holes in the copper vacancy acceptor when x was 0.500 (Cu{sub x}In{sub 1−x}S). However, the temperature coefficient of PL peak position decreased when x was 0.237. That meant the DAP recombination increased in the In-rich CIS QDs. - Highlights: • The enhanced photoluminescence (PL) for In-rich CuInS{sub 2} QDs with [Cu]/[In] molar ratios of 0.31. • The conduction electron-Cu vacancy recombination and DAP were considered to exist and the temperature-independent DAP recombination was enhanced in the In-rich CuInS{sub 2} QDs.

  8. Psoas abscess localization by gallium scan in aplastic anemia

    International Nuclear Information System (INIS)

    Gallium 67 scanning is an effective method of detecting inflammatory lesions, especially abscesses. A 10-year-old boy with aplastic anemia and severe leukopenia and granulocytopenia had a psoas abscess diagnosed by gallium scan. The patient died with Candida sepsis 18 days after bone marrow transplantation. At autopsy, a chronic psoas abscess with Candida was found. The gallium scan offers a clinically effective and noninvasive means of evaluating suspected infection in the granulocytopenia patient. (U.S.)

  9. Investigation & Analysis of Different Aluminium Alloys t

    OpenAIRE

    Nibedita Sethi*¹,; Ajit Senapati²

    2014-01-01

    Aluminium alloy LM-29, A-356 AND A-6060 was fabricated in sand casting method. Mach inability of aluminium alloy LM-29, A-356 AND A-6060 was investigated and evaluate the mach inability studying the different parameter such as cutting force, surface roughness, chip thickness, and power consumption during turning at different cutting speed and constant depth of cut and feed rate. In this paper also studies the mechanical properties means hardness, density and tensile strength o...

  10. Removal of aluminium from drinking water

    International Nuclear Information System (INIS)

    Aluminium in drinking water comes from natural sources and the alum used as coagulant in the water treatment process. Exposure to aluminium has been implicated in dialysis dementia, Parkinson and Alzheimer's disease. Drinking water containing aluminium was considered to be one of the main sources of Al intake into human body. For this reason, the removal of aluminium from drinking water is vital to our health. In this study, removal of aluminium was carried out by using a chelating resin. To achieve the purpose, two chelating resin iontosorb oxin (IO) and poly hydroxamic acid (PHA) were used. The effects of concentration, pH, stirring time and resin amount was investigated. The concentration range varied between 10 and 500 ppb, pH range was between 2 and 12, stirring time between 5 and 60 minutes, and resin amount between 100 and 1500 mg. The optimum conditions of these resins were determined in a batch system. The results obtained showed that the optimum condition to remove aluminium for poly hydroxamic acid and iontosorb was pH 5-8 and pH 4-9; concentration range between 50-500 ppb, and 150-500 ppb, resin amount 200 mg and the stirring time was 20 minutes, respectively. (author)

  11. Ongoing characterization of passivated aluminium nanopowders

    Energy Technology Data Exchange (ETDEWEB)

    Kwok, Q.S.M.; Fouchard, R.C.; Turcotte, A-M.; Abdel-Qader, Z.; Jones, D.E.G. [Natural Resources Canada, CANMET, Canadian Explosives Research Laboratory, Ottawa, ON (Canada)

    2002-04-01

    For characterization, the thermal behaviour of two aluminium nanopowders - Alss and Alssef - in air was determined using differential scanning calorimetry (DSC), simultaneous thermogravimetry-DTA (TG-DTA) and accelerating rate calorimetry (ARC). Alss and Alssef were found to be less reactive to air than previously determined for Als And Alex, possibly due to their thicker and different type of passivating layer. Stability determination for Alss and Alssef in a wet oxidizing environment was carried out using ARC, whereas outgassing behaviour of mixtures of ammonium dinitramide (ADN) and the various aluminium powders was investigated using TG-DTA-FTIR-MS (Fourier Transform Infrared Spectrometry-Mass Spectrometry). The addition of various aluminium powders resulted in only minimal effect on the thermal stability of ADN. Electrostatic discharge, friction sensitivities of ADN and its mixtures with various aluminium powders, and thermal stability and sensitivity of mixtures of nano-sized molybdenum trioxide with aluminium nanopowders were also studied. The electrostatic discharge sensitivity of molybdenum trioxide was shown to increase by the addition of aluminium nanopowders. 23 refs., 5 tabs., 7 figs.

  12. Efficient water reduction with gallium phosphide nanowires

    Science.gov (United States)

    Standing, Anthony; Assali, Simone; Gao, Lu; Verheijen, Marcel A.; van Dam, Dick; Cui, Yingchao; Notten, Peter H. L.; Haverkort, Jos E. M.; Bakkers, Erik P. A. M.

    2015-07-01

    Photoelectrochemical hydrogen production from solar energy and water offers a clean and sustainable fuel option for the future. Planar III/V material systems have shown the highest efficiencies, but are expensive. By moving to the nanowire regime the demand on material quantity is reduced, and new materials can be uncovered, such as wurtzite gallium phosphide, featuring a direct bandgap. This is one of the few materials combining large solar light absorption and (close to) ideal band-edge positions for full water splitting. Here we report the photoelectrochemical reduction of water, on a p-type wurtzite gallium phosphide nanowire photocathode. By modifying geometry to reduce electrical resistance and enhance optical absorption, and modifying the surface with a multistep platinum deposition, high current densities and open circuit potentials were achieved. Our results demonstrate the capabilities of this material, even when used in such low quantities, as in nanowires.

  13. The usefulness of gallium scintigraphy in idiopathic interstitial pneumonia

    International Nuclear Information System (INIS)

    We evaluated the value of gallium scintigraphy in 23 patients with idiopathic interstitial pneumonia. The degree of gallium lung uptake was compared with chest radiographic, pathologic as well as clinical findings. Particular attention was paid to pathologic findings which were categorized by the degrees of interstitial infiltrate composed of inflammatory cells, activity of alveolar endothelium, cellularity of fibroblasts and collagen fibers. The degree of gallium lung uptake was not necessarily correlated with the severity of the radiographic findings, but reflected the pathological findings well. We conclude that gallium scintigraphy is useful in the evaluation of the activity of idiopathic interstitial pneumonia. (author)

  14. Laser micromachining of indium tin oxide films on polymer substrates by laser-induced delamination

    International Nuclear Information System (INIS)

    A Q-switched neodymium : yttrium-aluminium-garnet (Nd : YAG) laser was used to ablate indium tin oxide (ITO) thin films from polyethylene terephthalate substrates. Film damage and partial removal with no evidence of a melt zone was observed above 1.7 J cm-2. Above the film removal threshold (3.3 J cm-2) the entire film thickness was removed without substrate damage, suggesting that ablation was a result of delamination of the film in the solid phase. Measurements of ablated fragment velocities near the ablation threshold were consistent with calculations of velocities caused by stress-induced delamination of the ITO film, except for a high velocity component at higher fluences. Nanosecond time-resolved shadowgraph photography revealed that the high velocity component was a shock wave induced by the rapid compression of ambient air when the film delaminated.

  15. Laser micromachining of indium tin oxide films on polymer substrates by laser-induced delamination

    Energy Technology Data Exchange (ETDEWEB)

    Willis, David A; Dreier, Adam L, E-mail: dwillis@lyle.smu.ed [Department of Mechanical Engineering, Southern Methodist University, Dallas, TX 75275 (United States)

    2009-02-21

    A Q-switched neodymium : yttrium-aluminium-garnet (Nd : YAG) laser was used to ablate indium tin oxide (ITO) thin films from polyethylene terephthalate substrates. Film damage and partial removal with no evidence of a melt zone was observed above 1.7 J cm{sup -2}. Above the film removal threshold (3.3 J cm{sup -2}) the entire film thickness was removed without substrate damage, suggesting that ablation was a result of delamination of the film in the solid phase. Measurements of ablated fragment velocities near the ablation threshold were consistent with calculations of velocities caused by stress-induced delamination of the ITO film, except for a high velocity component at higher fluences. Nanosecond time-resolved shadowgraph photography revealed that the high velocity component was a shock wave induced by the rapid compression of ambient air when the film delaminated.

  16. GaN growth using gallium hydride generated by hydrogenation of liquid gallium

    Science.gov (United States)

    Nagayoshi, H.; Nishimura, S.; Takeuchi, T.; Hirai, M.; Terashima, K.

    2005-02-01

    The novel growth method of GaN using hydrogen radicals has been investigated. This paper is the first report of gallium hydrogenation reaction and deposition of GaN using hydrogenated gallium. We found that gallium (Ga) could be volatilized at low temperature by hydrogenation reaction with hydrogen radicals. In this reaction, Ga assumed to be volatilized as GaH 3. The GaN deposition was attempted by using gas phase reaction of NH 3 and GaH 3 generated by the reaction between liquid Ga and hydrogen radicals. Hydrogen radicals were generated by hot tungsten filament, which works as a catalyst during hydrogen cracking, whose temperature was 1600 °C. Surface morphology, deposition rate, and film structure were investigated. It was confirmed that GaN could be deposited by this method. The source materials of this method are safe and of low cost compared to the conventional methods.

  17. Aluminium exclusion and aluminium tolerance in woody plants

    Directory of Open Access Journals (Sweden)

    Ivano eBrunner

    2013-06-01

    Full Text Available The aluminium (Al cation Al3+ is highly rhizotoxic and is a major stress factor to plants on acid soils, which cover large areas of tropical and boreal regions. Many woody plant species are native to acid soils and are well adapted to high Al3+ conditions. In tropical regions, both woody Al accumulator and non-Al accumulator plants occur, whereas in boreal regions woody plants are non-Al accumulators. The mechanisms of these adaptations can be divided into those that facilitate the exclusion of Al3+ from root cells (exclusion mechanisms and those that enable plants to tolerate Al3+ once it has entered the root and shoot symplast (internal tolerance mechanisms. The biochemical and molecular basis of these mechanisms have been intensively studied in several crop plants and the model plant Arabidopsis. In this review, we examine the current understanding of Al3+ exclusion and tolerance mechanisms from woody plants. In addition, we discuss the ecology of woody non-Al accumulator and Al accumulator plants, and present examples of Al3+ adaptations in woody plant populations. This paper complements previous reviews focusing on crop plants and provides insights into evolutionary processes operating in plant communities that are widespread on acid soils.

  18. Spin Injection in Indium Arsenide

    Directory of Open Access Journals (Sweden)

    Mark eJohnson

    2015-08-01

    Full Text Available In a two dimensional electron system (2DES, coherent spin precession of a ballistic spin polarized current, controlled by the Rashba spin orbit interaction, is a remarkable phenomenon that’s been observed only recently. Datta and Das predicted this precession would manifest as an oscillation in the source-drain conductance of the channel in a spin-injected field effect transistor (Spin FET. The indium arsenide single quantum well materials system has proven to be ideal for experimental confirmation. The 2DES carriers have high mobility, low sheet resistance, and high spin orbit interaction. Techniques for electrical injection and detection of spin polarized carriers were developed over the last two decades. Adapting the proposed Spin FET to the Johnson-Silsbee nonlocal geometry was a key to the first experimental demonstration of gate voltage controlled coherent spin precession. More recently, a new technique measured the oscillation as a function of channel length. This article gives an overview of the experimental phenomenology of the spin injection technique. We then review details of the application of the technique to InAs single quantum well (SQW devices. The effective magnetic field associated with Rashba spin-orbit coupling is described, and a heuristic model of coherent spin precession is presented. The two successful empirical demonstrations of the Datta Das conductance oscillation are then described and discussed.

  19. TRANSPARENT CONDUCTING OXIDE SYNTHESIS OF ALUMINIUM DOPED ZINC OXIDES BY CHEMICAL COPRECIPITATION

    Directory of Open Access Journals (Sweden)

    Silvia Maioco

    2013-03-01

    Full Text Available Aluminium doped zinc oxides (AZO are promising replacements for tin doped indium oxides (ITO but thin films show a wide range of physical properties strongly dependent on deposition process conditions. Submicrometric 1% aluminum doped zinc oxide ceramics (AZO are examined, prepared by coprecipitation, from Zn(NO32 and Al(NO33 aqueous solutions, sintered at 1200°C and subsequently annealed in 10-16 atm controlled oxygen fugacity atmospheres, at 1000°C. Electrical resistivity diminishes by two orders of magnitude after two hours of annealing and the Seebeck coefficient gradually changes from -140 to -50 µV/K within 8 h. It is concluded that increased mobility is dominant over the increased carrier density, induced by changes in metal-oxygen stoichiometry

  20. Heat treatment of aluminium strip coils; Gluehbehandlung von Aluminium-Bandbunden

    Energy Technology Data Exchange (ETDEWEB)

    Schroeder, Dominik; Dambauer, Georg [LOI Thermprocess GmbH, Essen (Germany)

    2012-08-15

    Nowadays, aluminium strip coils are increasingly heat-treated in single-coil lifting hearth furnaces SCL. Flexible, individual heat treatment allows fast reactions to short term requirements for the production of aluminium strip and offers energy saving possibilities. The following report describes the advantages of single-coil hearth furnaces in terms of flexibility, energy consumption and possible configurations. (orig.)

  1. Design of welded aluminium connections (Entwurf und Berechnung von Aluminium Schweissverbindungen)

    NARCIS (Netherlands)

    Soetens, F.

    1998-01-01

    In the past two decades considerable research effort has been put into welded aluminium connections in order to better understand their structural behaviour and to up-date the design rules in the existing standards at the time [1]. Since weids in aluminium are more critical compared to steel, the ab

  2. TEM investigation of aluminium containing precipitates in high aluminium doped silicon carbide

    International Nuclear Information System (INIS)

    Full text: Silicon carbide is a promising semiconductor material for applications in high temperature and high power devices. The successful growth of good quality epilayers in this material has enhanced its potential for device applications. As a novel semiconductor material, there is a need for studying its basic physical properties and the role of dopants in this material. In this study, silicon carbide epilayers were grown on 4H-SiC wafers of (0001) orientation with a miscut angle of 8 deg at a temperature of 1550 deg C. The epilayers contained regions of high aluminium doping well above the solubility of aluminium in silicon carbide. High temperature annealing of this material resulted in the precipitation of aluminium in the wafers. The samples were analysed by secondary ion mass spectrometry and transmission electron microscopy. Selected area diffraction studies show the presence of aluminium carbide and aluminium silicon carbide phases. Copyright (2002) Australian Society for Electron Microscopy Inc

  3. Water atomised aluminium alloy powders

    Energy Technology Data Exchange (ETDEWEB)

    Neikov, O.D.; Vasilieva, G.I.; Sameljuk, A.V.; Krajnikov, A.V

    2004-10-10

    The new rapid solidification (RS) process based on high-pressure water atomisation (WA) of the melt for manufacturing of advanced aluminium alloys was realised in the form of a pilot plant. The problems of safe operation in the course of Al alloy powder production and powder quality were solved by the use of water solutions of inhibitors, by the control of suspension temperature and hydrogen ion exponent (pH), by the hydraulic classification of atomised products, and by the optimisation of dehydration procedure. The rate of powder-water interaction strongly depends on the value of pH. While the rate of room temperature reactions is very slow at pH 3.0-4.0, the increase of pH to 6.0 leads to an intensive powder oxidation. A set of powder metallurgy (PM) alloys for various applications was produced on the base of water atomised powders. The characteristics of tensile strength of such alloys essentially exceed those of cast materials of similar compositions.

  4. Water atomised aluminium alloy powders

    International Nuclear Information System (INIS)

    The new rapid solidification (RS) process based on high-pressure water atomisation (WA) of the melt for manufacturing of advanced aluminium alloys was realised in the form of a pilot plant. The problems of safe operation in the course of Al alloy powder production and powder quality were solved by the use of water solutions of inhibitors, by the control of suspension temperature and hydrogen ion exponent (pH), by the hydraulic classification of atomised products, and by the optimisation of dehydration procedure. The rate of powder-water interaction strongly depends on the value of pH. While the rate of room temperature reactions is very slow at pH 3.0-4.0, the increase of pH to 6.0 leads to an intensive powder oxidation. A set of powder metallurgy (PM) alloys for various applications was produced on the base of water atomised powders. The characteristics of tensile strength of such alloys essentially exceed those of cast materials of similar compositions

  5. Aluminium as heating fuel. Tests with aluminium powder prove suitability in principle. Aluminium als Heizungs-Brennstoff. Versuche mit Aluminiumpulver beweisen prinzipielle Eignung

    Energy Technology Data Exchange (ETDEWEB)

    Weber, R.

    1990-12-01

    Tests prove that aluminium powder is perfectly suited as fuel and storage material for solar energy. The combustion product itself is again the base material for aluminium production, i.e. aluminium can be recycled. There are three problematic areas: 1. flame stability, 2. combustion duration and 3. environmental compatibility. Further development projects will aim at the construction of practice-orientated plants in which combustion, heat extraction and recovery of aluminium oxide is combined. A further aim is the melting burner to which aluminium is supplied in form of wires, cuttings or rods. (BWI).

  6. Determination of indium in fluedust and zinc ore

    Energy Technology Data Exchange (ETDEWEB)

    Rajesh, N.; Subramanian, M.S. (Indian Inst. of Tech., Madras (India). Dept. of Chemistry)

    1991-01-01

    A radiochemical displacement method has been developed for the determination of trace amounts of indium using radioactive zinc dithizonate as the reagent. The ease with which indium can be quantitatively collected over ferric hydroxide is put to advantage in developing the above method. The collection method in conjunction with the radiodisplacement method is used to determine indium in fluedust and zinc ore. The method is sensitive down to 2 {mu}g indium in 10 ml of aqueous volume. (orig.).

  7. Selective recovery of indium from lead-smelting dust

    OpenAIRE

    Sawai, Hikaru; Rahman, Ismail M. M.; Tsukagoshi, Yoshinori; Wakabayashi, Tomoya; Maki, Teruya; Mizutanai, Satoshi; Hasegawa, Hiroshi

    2015-01-01

    Non-ferrous smelting dust, especially lead-smelting dust (LSD), contains percent levels of indium and thus constitutes a novel indium resource. The main difficulty in recovering indium from LSD is the coexisting presence of lead and zinc. In this study, a unique indium separation process was designed, combining techniques that involve washing with a chelant, leaching with acid and precipitation as hydroxide. The majority of the Pb in the LSD was selectively separated during chelant-assisted w...

  8. Preparation for Ultra High Pure Indium Metal for Optoelectronic Applications

    OpenAIRE

    Shashwat V. Joshi; Amit Kachhadiya; Prof. Minal S. Dani; Prof.Indravadan B Dave

    2014-01-01

    Ultra high pure Indium metal is extensively used in optoelectronic devices. Indium and its alloys become potential candidates in aerospace, defense and communication sectors. Purification of Indium has been done by Instrolec-200 Refiner followed by Directional Melting/ Freezing and Solidification Systems. Major targeted impurities are Metallic impurities Ag, Al, As, Bi, Ca, Cu, Fe, Ga, Ge, Mg, Pb, Sb, Si, Sn, and Zn. Purified Indium is characterized by analytical tec...

  9. Thermodynamic and kinetic properties of indium-implanted silicon. I

    International Nuclear Information System (INIS)

    Rutherford backscattering analysis and junction depth and sheet conductivity measurements were used to investigate the recrystallization of indium-implanted Si(100) substrates and their electrical behaviour after annealings up to 8000C. The data show an initial fast recovery of the implant damage and a high anomalous indium diffusivity. A strong correlation between the substitutionality of indium and the sheet conductivity is found. The observed conductivity decrease with increasing annealing temperature is attributed to the loss of substitutionality by the indium. (Auth.)

  10. Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells

    International Nuclear Information System (INIS)

    Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. These natively textured HGZO thin films exhibit rough pyramid-like textured surface, high optical transmittances in the visible and near infrared region and excellent electrical properties. The experiment results indicate that tungsten-doped indium oxide (In2O3:W, IWO) buffer layers can effectively improve the surface roughness and enhance the light scattering ability of HGZO thin films. The root-mean-square roughness of HGZO, IWO (10 nm)/HGZO and IWO (30 nm)/HGZO thin films are 28, 44 and 47 nm, respectively. The haze values at the wavelength of 550 nm increase from 7.0% of HGZO thin film without buffer layer to 18.37% of IWO (10 nm)/HGZO thin film. The optimized IWO (10 nm)/HGZO exhibits a high optical transmittance of 82.18% in the visible and near infrared region (λ ∼ 400–1100 nm) and excellent electrical properties with a relatively low sheet resistance of 3.6 Ω/□ and the resistivity of 6.21 × 10−4 Ωcm. - Highlights: • Textured hydrogenated gallium-doped zinc oxide (HGZO) films were developed. • Tungsten-doped indium oxide (IWO) buffer layers were applied for the HGZO films. • Light-scattering ability of the HGZO films can be improved through buffer layers. • Low sheet resistance and high haze were obtained for the IWO(10 nm)/HGZO film. • The IWO/HGZO films are promising transparent conductive layers for solar cells

  11. Benchmarking of Evaluated Neutron Data for Gallium Sample

    Institute of Scientific and Technical Information of China (English)

    HAN; Rui; NIE; Yang-bo; RUAN; Xi-chao; BAO; Jie; REN; Jie; HUANG; Han-xiong; LI; Xia; ZHANG; Kai; ZHOU; Zu-ying

    2013-01-01

    Gallium(Ga)is a kind of target material and an important fission product.It has the characteristics of low melting point and high boiling point.The integral experimental study on Gallium data is an important issue.It has an important application for design of reactors and ADS(Accelerator Driven System)

  12. Quantitative pulmonary gallium scanning in interstitial lung disease

    International Nuclear Information System (INIS)

    The mechanisms responsible for gallium uptake in chronic, non-infective, diffuse lung disease are not completely understood. This study attempted to clarify some of them. A lung/liver gallium index was calculated in 113 subjects, some normal and some with various interstitial lung diseases, predominantly those associated with connective tissue disease. The mean gallium index was significantly higher in the groups with active interstitial lung disease (5.7) and non-infective bronchiolitis (4.1) compared with non-smoking normals (3.0; P<0.05). To investigate the mechanisms responsible for gallium uptake, the gallium index was correlated with bronchoalveolar lavage findings, respiratory function tests and clinical features. Significant correlations (P<0.05) were found with age in non-smoking normals; lavage macrophages in smoking normals; age but no other parameter in bronchiolitis; lavage lymphocytes, lavage albumin and improvement in diffusion capacity for carbon monoxide in those with active interstitial lung disease. It is concluded that in normal smokers gallium uptake may be due to a macrophage-mediated process. Gallium uptake in active interstitial lung disease associated with connective tissue disease appears to be an immunological process in which transport and retention of gallium is associated with that of albumin. (orig.)

  13. Indium-111 leukocyte scanning and fracture healing

    International Nuclear Information System (INIS)

    This study was undertaken to determine the specificity of indium-111 leukocyte scans for osteomyelitis when fractures are present. Midshaft tibial osteotomies were performed in 14 New Zealand white rabbits, seven of which were infected postoperatively with Staphylococcus aureus per Norden's protocol. All 14 rabbits were scanned following injection with 75 microCi of indium 111 at 72 h after osteotomy and at weekly intervals for 4 weeks. Before the rabbits were killed, the fracture sites were cultured to document the presence or absence of infection. The results of all infected osteotomy sites were positive, whereas no positive scans were found in the noninfected osteotomies. We concluded from this study that uncomplicated fracture healing does not result in a positive indium-111 leukocyte scan

  14. 3-dimensional shaped aluminium foam sandwiches

    Energy Technology Data Exchange (ETDEWEB)

    Baumeister, J. [Fraunhofer-Institut fuer Fertigungstechnik und Angewandte Materialforschung, Bremen (Germany); Baumgaertner, F. [Schunk Sintermetalltechnik, Giessen (Germany); Gers, H. [Honsel AG, Meschede (Germany); Seeliger, W. [Wilhelm Karmann GmbH, Osnabrueck (Germany)

    2000-07-01

    3-dimensional shaped sandwich panels with a very high stiffness can be produced in an elegant way by combining aluminium face sheets with an aluminium foam core. For this, a mixture of aluminium powder and a foaming agent is compressed to a semi-finished product of nearly vanishing porosity by extrusion, powder rolling or hot isostatic pressing. The resulting foamable semi-finished aluminium material is roll clad with sheets of conventional sheet or aluminium. As a result a precursor material is obtained consisting of two face sheets which are metallurgically bonded to the foamable core layer. This sandwich precursor material can be shaped into a 3-dimensional part by conventional techniques, e.g. by stamping or deep drawing. In a final step the foamable precursor material is heated up to the melting point of the core layer thus initiating its expansion into the desired 3-dimensional shaped sandwich structure. The porosity of the foamed core layer is in the range from 80-90% so that the integral density of the sandwich structure can be as low as 0,7 g/cm{sup 3}. The sandwich materials combine the low weight and high bending stiffness with the advantages of the face sheets, i.e. the high strength and weldability. The manufacturing process will be described in detail and the material properties will be shown. Current and future possible applications will be outlined as well as concrete parts produced up to date. (orig.)

  15. Thermal Plasma Synthesis of Crystalline Gallium Nitride Nanopowder from Gallium Nitrate Hydrate and Melamine

    Directory of Open Access Journals (Sweden)

    Tae-Hee Kim

    2016-02-01

    Full Text Available Gallium nitride (GaN nanopowder used as a blue fluorescent material was synthesized by using a direct current (DC non-transferred arc plasma. Gallium nitrate hydrate (Ga(NO33∙xH2O was used as a raw material and NH3 gas was used as a nitridation source. Additionally, melamine (C3H6N6 powder was injected into the plasma flame to prevent the oxidation of gallium to gallium oxide (Ga2O3. Argon thermal plasma was applied to synthesize GaN nanopowder. The synthesized GaN nanopowder by thermal plasma has low crystallinity and purity. It was improved to relatively high crystallinity and purity by annealing. The crystallinity is enhanced by the thermal treatment and the purity was increased by the elimination of residual C3H6N6. The combined process of thermal plasma and annealing was appropriate for synthesizing crystalline GaN nanopowder. The annealing process after the plasma synthesis of GaN nanopowder eliminated residual contamination and enhanced the crystallinity of GaN nanopowder. As a result, crystalline GaN nanopowder which has an average particle size of 30 nm was synthesized by the combination of thermal plasma treatment and annealing.

  16. The effect of annealing temperature on the stability of gallium tin zinc oxide thin film transistors

    International Nuclear Information System (INIS)

    With the growing need for large area display technology and the push for a faster and cheaper alternative to the current amorphous indium gallium zinc oxide (a-IGZO) as the active channel layer for pixel-driven thin film transistors (TFTs) display applications, gallium tin zinc oxide (GSZO) has shown to be a promising candidate due to the similar electronic configuration of Sn4+ and In3+. In this work TFTs of GSZO sputtered films with only a few atomic % of Ga and Sn have been fabricated. A systematic and detailed comparison has been made of the properties of the GSZO films annealed at two temperatures: 140 °C and 450 °C. The electrical and optical stabilities of the respective devices have been studied to gain more insight into the degradation mechanism and are correlated with the initial TFT performance prior to the application of stress. Post deposition annealing at 450 °C of the films in air was found to lead to a higher atomic concentration of Sn4+ in these films and a superior quality of the film, as attested by the higher film density and less surface and interface roughness in comparison to the lower annealed temperature device. These result in significantly reduced shallow and deep interface traps with improved performance of the device exhibiting VON of −3.5 V, ION/IOFF of 108, field-effect mobility (μFE) of 4.46 cm2 V−1s−1, and sub-threshold swing of 0.38 V dec−1. The device is stable under both electrical and optical bias for wavelengths of 550 nm and above. Thus, this work demonstrates GSZO-based TFTs as a promising viable option to the IGZO TFTs by further tailoring the film composition and relevant processing temperatures. (paper)

  17. Effect of aluminium phosphate as admixture on oxychloride cement

    Indian Academy of Sciences (India)

    M P S Chandrawat; R N Yadav

    2000-02-01

    The effect of admixing of aluminium phosphate on oxychloride cement in the matrix has been investigated. It is shown that aluminium phosphate retards the setting process of the cement and improves water-tightness.

  18. Solidification of spent TBP solvent with aluminium chloride compounds

    International Nuclear Information System (INIS)

    The new techniques for processing spent TBP was investigated. It was proved that treatment of TBP containing DBP with aluminium chloride resulted in the formation of aluminium phosphate suitable for long term storage and final disposal

  19. Nuclear microprobe imaging of gallium nitrate in cancer cells

    Energy Technology Data Exchange (ETDEWEB)

    Ortega, Richard E-mail: ortega@cenbg.in2p3.fr; Suda, Asami; Deves, Guillaume

    2003-09-01

    Gallium nitrate is used in clinical oncology as treatment for hypercalcemia and for cancer that has spread to the bone. Its mechanism of antitumor action has not been fully elucidated yet. The knowledge of the intracellular distribution of anticancer drugs is of particular interest in oncology to better understand their cellular pharmacology. In addition, most metal-based anticancer compounds interact with endogenous trace elements in cells, altering their metabolism. The purpose of this experiment was to examine, by use of nuclear microprobe analysis, the cellular distribution of gallium and endogenous trace elements within cancer cells exposed to gallium nitrate. In a majority of cellular analyses, gallium was found homogeneously distributed in cells following the distribution of carbon. In a smaller number of cells, however, gallium appeared concentrated together with P, Ca and Fe within round structures of about 2-5 {mu}m diameter located in the perinuclear region. These intracellular structures are typical of lysosomial material.

  20. Gallium-containing hydroxyapatite for potential use in orthopedics

    International Nuclear Information System (INIS)

    A novel material that may be recommended for grafts and implants stimulating bone growth has been obtained by introducing gallium ions (up to 11.0 mass%) into crystalline lattice of hydroxyapatite. The doping was carried out using gallium nitrate and sodium gallate solutions. In both cases, lattice parameters of gallium-doped hydroxyapatite are identical to those of pure synthetic hydroxyapatite. Gallium does not replace calcium as a result of heterovalent substitution and consequently produces no distortions in the framework of hydroxyapatite matrix. It remains strongly fixed in the form of solid solution of intercalation. According to scanning electron microscopy images gallium insertion does not cause any morphological alterations in hydroxyapatite structure and the product developed meets physico-chemical criteria for biomaterial to be employed in orthopedic practice and local handling of traumatic injuries. Its future usage opens the opportunity to enhance osteosynthesis and calcium retention in loco.

  1. Nuclear microprobe imaging of gallium nitrate in cancer cells

    Science.gov (United States)

    Ortega, Richard; Suda, Asami; Devès, Guillaume

    2003-09-01

    Gallium nitrate is used in clinical oncology as treatment for hypercalcemia and for cancer that has spread to the bone. Its mechanism of antitumor action has not been fully elucidated yet. The knowledge of the intracellular distribution of anticancer drugs is of particular interest in oncology to better understand their cellular pharmacology. In addition, most metal-based anticancer compounds interact with endogenous trace elements in cells, altering their metabolism. The purpose of this experiment was to examine, by use of nuclear microprobe analysis, the cellular distribution of gallium and endogenous trace elements within cancer cells exposed to gallium nitrate. In a majority of cellular analyses, gallium was found homogeneously distributed in cells following the distribution of carbon. In a smaller number of cells, however, gallium appeared concentrated together with P, Ca and Fe within round structures of about 2-5 μm diameter located in the perinuclear region. These intracellular structures are typical of lysosomial material.

  2. Indium 111 leucocyte scintigraphy in abdominal sepsis

    International Nuclear Information System (INIS)

    We have studied the clinical utility of indium 111 autologous leucocyte scintigraphy retrospectively in 45 patients presenting with suspected intra-abdominal sepsis. The sensitivity was 95% (21/22) and the specificity was 91% (21/23). Some 34 of the studies (17 positive and 17 negative) were considered helpful in furthering patient management (76%) and 8, unhelpful (18%). In 3, the study results were misleading and led to inappropriate treatment. Indium 111 scintigraphy, whether positive or negative, provides information in patients with suspected intra-abdominal sepsis upon which therapeutic decisions can be based. (orig.)

  3. Steam Assisted Accelerated Growth of Oxide Layer on Aluminium Alloys

    DEFF Research Database (Denmark)

    Din, Rameez Ud; Yuksel, Serkan; Jellesen, Morten Stendahl; Møller, Per; Ambat, Rajan

    2013-01-01

    Corrosion resistance of aluminium alloys is related to the composition and morphology of the oxide film on the surface of aluminium. In this paper we investigated the use of steam on the surface modification of aluminium to produce boehmite films. The study reveals a detailed investigation of the...... effect of vapour pressure, structure of intermetallic particles and thickness of boehmite films on the corrosion behaviour of aluminium alloys....

  4. Advances in development and application of aluminium batteries

    DEFF Research Database (Denmark)

    Qingfeng, Li; Zhuxian, Qiu

    2001-01-01

    Aluminium has long attracted attention as a potential battery anode because of its high theoretical voltage and specific energy. The protective oxide layer at aluminium surface is however detrimental to its performance to achieve its reversible potential, and also causing the delayed activation of...... aluminium batteres, especially aluminium-air batteries, and a wide range of their applications from emergency power supplies, reserve batteries field portable batteries, to batteries for electric vehicles and underwater propulsion....

  5. Friction stir welding (FSW) of aluminium foam sandwich panels

    OpenAIRE

    M. Bušić; Kožuh, Z.; D. Klobčar; Samardžić, I.

    2016-01-01

    The article focuses on the influence of welding speed and tool tilt angle upon the mechanical properties at the friction stir welding of aluminium foam sandwich panels. Double side welding was used for producing butt welds of aluminium sandwich panels applying insertion of extruded aluminium profile. Such insertion provided lower pressure of the tool upon the aluminium panels, providing also sufficient volume of the material required for the weldment formation. Ultimate tensile strength and f...

  6. Fluorimetric analysis of gallium in bauxite, by-products, products from gallium processing and its control solutions

    International Nuclear Information System (INIS)

    The gallium processing since raw material analysis until end-products analysis is studied. Gallium presence in by-products and products, as well as the fluorimetric method is analyzed. Equipments and materials used in laboratory, reagents and chemical solutions are described. (M.J.C.)

  7. Study on hardening mechanisms in aluminium alloys

    Directory of Open Access Journals (Sweden)

    P. K. Mandal

    2016-01-01

    Full Text Available The Al-Zn-Mg alloys are most commonly used age-hardenable aluminium alloys. The hardening mechanism is further enhanced in addition of Sc. Sc additions to aluminium alloys are more promising. Due to the heterogeneous distribution of nano-sized Al3Sc precipitates hardening effect can be accelerated. Mainly, highlight on hardening mechanism in Al-Zn-Mg alloys with Sc effect is to study. In addition, several characterisations have been done to age-hardening measurements at elevated temperatures from 120oC to 180 oC. The ageing kinetics has also been calculated from Arrhenius equation. Furthermore, friction stir processing (FSP can be introduced to surface modification process and hardened the cast aluminium alloys. In this study, hardening mechanism can be evaluated by Vicker’s hardness measurement and mechanical testing is present task.

  8. Mechanical characteristics of aluminium / aluminium and aluminium / steel joints used for lightening of automobile bodies; Caracteristiques mecaniques d'assemblages aluminium / aluminium et aluminium / acier utilises pour l'allegement des carrosseries automobiles

    Energy Technology Data Exchange (ETDEWEB)

    Kosuge, Haraga [Mitsubishi Electric Corp., Centre de R and D des Technologies Avancees, Dept. des Materiaux et des Eco-Materiaux (Japan)

    2001-06-01

    All the possible solutions used for the steel-aluminium composite bonds are not equal. The riveting, linked or not to the bonding, give the best results. The clinching requires an increase of thicknesses for a mechanical resistance equal to those of homogeneous joints. (O.M.)

  9. Corrosion behaviour of borated aluminium used as neutron absorber

    International Nuclear Information System (INIS)

    The electrochemical behaviour of pure and borated aluminium was examined. Measurements were performed in two different electrolytes at 90 C containing different trace-amounts of chloride. For borated aluminium current transients, i.e. metastable depassivation events were found. It is suggested to attribute these transients to less stable passivation layers in comparison to pure aluminium

  10. Corrosion of Metal-Matrix Composites with Aluminium Alloy Substrate

    OpenAIRE

    B. Bobic; Mitrovic, S.; M. Babic; I. Bobic

    2010-01-01

    The corrosion behaviour of MMCs with aluminium alloy matrix was presented. The corrosion characteristics of boron-, graphite-, silicon carbide-, alumina- and mica- reinforced aluminium MMCs were reviewed. The reinforcing phase influence on MMCs corrosion rate as well as on various corrosion forms (galvanic, pitting, stress corrosion cracking, corrosion fatique, tribocorrosion) was discussed. Some corrosion protection methods of aluminium based MMCs were described

  11. Internal friction in iron-aluminium alloys having a high aluminium content

    International Nuclear Information System (INIS)

    By using a torsion pendulum to measure the internal friction of iron-aluminium alloys containing between 25 and 50 atom per cent of aluminium, it has been possible to show the existence of three damping peaks due to interstitial carbon. Their evolution is followed as a function of the carbon content, of the thermal treatment and of the aluminium content. A model based on the preferential occupation of tetrahedral sites is proposed as an interpretation of the results. A study of the Zener peak in these substitution alloys shows also that a part of the short distance disorder existing at high temperatures can be preserved by quenching. (author)

  12. Cathodoluminescence spectra of gallium nitride nanorods

    OpenAIRE

    Tsai, Chia-Chang; Li, Guan-Hua; Lin, Yuan-Ting; Chang, Ching-Wen; Wadekar, Paritosh; Chen, Quark Yung-Sung; Rigutti, Lorenzo; Tchernycheva, Maria; Julien, François Henri; Tu, Li-Wei

    2011-01-01

    Gallium nitride [GaN] nanorods grown on a Si(111) substrate at 720°C via plasma-assisted molecular beam epitaxy were studied by field-emission electron microscopy and cathodoluminescence [CL]. The surface topography and optical properties of the GaN nanorod cluster and single GaN nanorod were measured and discussed. The defect-related CL spectra of GaN nanorods and their dependence on temperature were investigated. The CL spectra along the length of the individual GaN nanorod were also studie...

  13. Diamond grooving of rapidly solidified optical aluminium

    Science.gov (United States)

    Abou-El-Hossein, Khaled; Hsu, Wei-Yao; Ghobashy, Sameh; Cheng, Yuan-Chieh; Mkoko, Zwelinzima

    2015-10-01

    Traditional optical aluminium grades such as Al 6061 are intensively used for making optical components for applications ranging from mould insert fabrication to laser machine making. However, because of their irregular microstructure and relative inhomogeneity of material properties at micro scale, traditional optical aluminium may exhibit some difficulties when ultra-high precision diamond turned. Inhomogeneity and micro-variation in the material properties combined with uneven and coarse microstructure may cause unacceptable surface finish and accelerated tool wear, especially in grooving operation when the diamond tool edge is fully immersed in the material surface. Recently, new grades of optical aluminium that are featured by their ultra-fine microstructure and improved material properties have been developed to overcome the problem of high tool wear rates. The new aluminium grades have been developed using rapid solidification process which results in extremely small grain sizes combined with improved mechanical properties. The current study is concerned with investigating the performance of single-point diamond turning when grooving two grades of rapidly solidified aluminium (RSA) grades: RSA905 which is a high-alloyed aluminium grade and RSA443 which has a high silicon content. In this study, two series of experiments employed to create radial microgrooves on the two RSA grades. The surface roughness obtained on the groove surface is measured when different combinations of cutting parameters are used. Cutting speed is varied while feed rate and depth of cut were kept constant. The results show that groove surface roughness produced on RSA443 is higher than that obtained on RSA905. Also, the paper reports on the effect of cutting speed on surface roughness for each RSA grade.

  14. Rapidly solidified aluminium for optical applications

    OpenAIRE

    Gubbels, G.P.H.; Venrooy, B.W.H.; Bosch, A.J.; Senden, R

    2008-01-01

    This paper present the results of a diamond turning study of a rapidly solidified aluminium 6061 alloy grade, known as RSA6061. It is shown that this small grain material can be diamond turned to smaller roughness values than standard AA6061 aluminium grades. Also, the results are nearly as good as nickel plated surfaces, but the RSA6061 has the advantage that no additional production steps are needed and that no bi-metallic bending or delamination can occur in a thermally changing environmen...

  15. Defect generation during solidification of aluminium foams

    International Nuclear Information System (INIS)

    The reason for the frequent occurrence of cell wall defects in metal foams was investigated. Aluminium foams often expand during solidification, a process which is referred as solidification expansion (SE). The effect of SE on the structure of aluminium foams was studied in situ by X-ray radioscopy and ex situ by X-ray tomography. A direct correlation between the magnitude of SE and the number of cell wall ruptures during SE and finally the number of defects in the solidified foams was found.

  16. The dissolution and formation enthalpy of alloys and intermetallics of aluminium-lanthanum and aluminium-cerium systems

    International Nuclear Information System (INIS)

    Present article is devoted to dissolution and formation enthalpy of alloys and intermetallics of aluminium-lanthanum and aluminium-cerium systems. Therefore the dissolution temperatures of alloys and intermetallics of aluminium-lanthanum and aluminium-cerium systems were defined by means of calorimetry method. The enthalpy of formation of intermetallics of Al-Ce system was defined as well. The regularities in changes of dissolution and formation enthalpy of alloys and intermetallics depending on composition were studied.

  17. Regulations in interaction of indium monochloride with concentrated water solutions of indium trichloride at various temperature

    International Nuclear Information System (INIS)

    The equilibrium concentration of univalent indium is determined at temperatures 20-50 deg C. At concentration of the trichloride of 1.8-4.8 mol/l the equilibrium concentration of univalent indium is defined by the balance of disproportionation-reproportionation, and at higher concentration of the trichloride by solubility of the corresponding solid phase. The temperature dependences for solubility of these compounds are obtained

  18. The oxidation and surface speciation of indium and indium oxides exposed to atmospheric oxidants

    Science.gov (United States)

    Detweiler, Zachary M.; Wulfsberg, Steven M.; Frith, Matthew G.; Bocarsly, Andrew B.; Bernasek, Steven L.

    2016-06-01

    Metallic indium and its oxides are useful in electronics applications, in transparent conducting electrodes, as well as in electrocatalytic applications. In order to understand more fully the speciation of the indium and oxygen composition of the indium surface exposed to atmospheric oxidants, XPS, HREELS, and TPD were used to study the indium surface exposed to water, oxygen, and carbon dioxide. Clean In and authentic samples of In2O3 and In(OH)3 were examined with XPS to provide standard spectra. Indium was exposed to O2 and H2O, and the ratio of O2 - to OH- in the O1s XPS region was used to monitor oxidation and speciation of the surface. HREELS and TPD indicate that water dissociates on the indium surface even at low temperature, and that In2O3 forms at higher temperatures. Initially, OH- is the major species at the surface. Pure In2O3 is also OH- terminated following water exposure. Ambient pressure XPS studies of water exposure to these surfaces suggest that high water pressures tend to passivate the surface, inhibiting extensive oxide formation.

  19. Gallium increases bone calcium and crystallite perfection of hydroxyapatite.

    Science.gov (United States)

    Bockman, R S; Boskey, A L; Blumenthal, N C; Alcock, N W; Warrell, R P

    1986-12-01

    Gallium, a group IIIa metal, is known to interact with hydroxyapatite as well as the cellular components of bone. In recent studies we have found gallium to be a potent inhibitor of bone resorption that is clinically effective in controlling cancer-related hypercalcemia as well as the accelerated bone resorption associated with bone metastases. To begin to elucidate gallium's mechanism of action we have examined its effects on bone mineral properties. After short-term (14 days) administration to rats, gallium nitrate produced measurable changes in bone mineral properties. Using atomic absorption spectroscopy, low levels of gallium were noted to preferentially accumulate in regions of active bone formation, 0.54 +/- .07 microgram/mg bone in the metaphyses versus 0.21 +/- .03 microgram/mg bone in the diaphyses, P less than 0.001. The bones of treated animals had increased calcium content measured spectrophotometrically. Rats injected with radiolabeled calcium during gallium treatment had greater 45-calcium content compared to control animals. By wide-angle X-ray analyses, larger and/or more perfect hydroxyapatite was observed. The combined effects of gallium on bone cell function and bone mineral may explain its clinical efficacy in blocking accelerated bone resorption. PMID:3026592

  20. Compatibility of ITER candidate structural materials with static gallium

    International Nuclear Information System (INIS)

    Tests were conducted on the compatibility of gallium with candidate structural materials for the International Thermonuclear Experimental Reactor, e.g., Type 316 SS, Inconel 625, and Nb-5 Mo-1 Zr alloy, as well as Armco iron, Nickel 270, and pure chromium. Type 316 stainless steel is least resistant to corrosion in static gallium and Nb-5 Mo-1 Zr alloy is most resistant. At 400 degrees C, corrosion rates are ∼4.0, 0.5, and 0.03 mm/yr for type 316 SS, Inconel 625, and Nb-5 Mo- 1 Zr alloy, respectively. The pure metals react rapidly with gallium. In contrast to findings in earlier studies, pure iron shows greater corrosion than nickel. The corrosion rates at 400 degrees C are ≥88 and 18 mm/yr, respectively, for Armco iron and Nickel 270. The results indicate that at temperatures up to 400 degrees C, corrosion occurs primarily by dissolution and is accompanied by formation of metal/gallium intermetallic compounds. The solubility data for pure metals and oxygen in gallium are reviewed. The physical, chemical, and radioactive properties of gallium are also presented. The supply and availability of gallium, as well as price predictions through the year 2020, are summarized

  1. China’s Production and Market of Aluminium Extruded Profiles

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    <正>Chinese aluminium extrusion industry came into existence at the early 1950s with most products used in military industry and national defence.At the beginning of 1980s,the produc- tion of construction aluminium profiles started simultaneously in North and South China.In the following thirty years,the aluminium extru- sion industry entered into a quickly developing stage with a focus on construction aluminium profiles.With the blooming real estate industry, the demand for construction aluminium profiles from the domestic market has a tendency of yearly increase.From 2000,the quick devel- opments of China’s auto and railway vehicle

  2. Aluminium composite casting dispersion reinforced with iron-aluminium and silicon carbide phases

    OpenAIRE

    B. Formanek; J. Piątkowski; J. Szymszal

    2010-01-01

    Aluminium matrix composite with dispersion-reinforced, made by similar to stircasting process was characterised. The mixture of powders was produced by the process of mechanical agglomeration of powdered FexAly and SiC with aluminium. The chemical composition ofagglomerates was selected in a way such as to obtain 25 wt.% reinforcement of the AlSi9Cu4 silumin matrix. Applying thermal analysis ATD, the alloy solidification process was determined, reading out the typical solidification parameter...

  3. Influence of aluminium alloy type on dissimilar friction stir lap welding of aluminium to copper

    OpenAIRE

    Galvão, I; Verdera, D; Gesto, D; Loureiro, A.; Rodrigues, D. M.

    2013-01-01

    A heat-treatable (AA 6082) and a non-heat treatable (AA 5083) aluminium alloys were friction stir lap welded to copper using the same welding parameters. Macro and microscopic analysis of the welds enabled to detect important differences in welding results, according to the aluminium alloy type. Whereas important internal defects, resulting from ineffective materials mixing, were detected for the AA 5083/copper welds, a relatively uniform material mixing was detected in the AA 6082/copper wel...

  4. Decreasing methylation of pectin caused by nitric oxide leads to higher aluminium binding in cell walls and greater aluminium sensitivity of wheat roots

    OpenAIRE

    Sun, Chengliang; Lu, Lingli; Yu, Yan; Liu, Lijuan; Hu, Yan; Ye, Yiquan; Jin, Chongwei; Lin, Xianyong

    2015-01-01

    Highlight Aluminium-induced nitric oxide production enhances the aluminium sensitivity of wheat by decreasing pectin methylation of root cell-wall pectin, resulting in greater aluminium binding in root cell walls.

  5. Steam generated conversion coating on aluminium alloys

    DEFF Research Database (Denmark)

    Din, Rameez Ud; Jellesen, Morten Stendahl; Ambat, Rajan

    into functional conversion coatings in order to enhance corrosion resistance and adhesion to paint systems. Chromium based conversion coatings have been extensively used on aluminium alloys to improve adhesion of subsequent paint layers and corrosion resistance. However, the use of hexavalent chromium...

  6. Alloys oxidation of aluminium-scandium system

    International Nuclear Information System (INIS)

    Alloys and compounds of rare earth metals with aluminium thanks to their high corrosion stability, durability and small specific weight find to apply in various new techniques. On the base of carried out investigation it could be recommend as de oxidizing and alloying compositions containing 15-50 % of scandium as in possession of minimal oxidation

  7. Constant structure creep experiments on aluminium

    Czech Academy of Sciences Publication Activity Database

    Milička, Karel

    2011-01-01

    Roč. 49, č. 5 (2011), s. 307-318. ISSN 0023-432X R&D Projects: GA AV ČR IAA2041203 Institutional research plan: CEZ:AV0Z20410507 Keywords : mechanical properties * high temperature deformation * creep * aluminium Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.451, year: 2011

  8. An ultrafast rechargeable aluminium-ion battery

    Science.gov (United States)

    Lin, Meng-Chang; Gong, Ming; Lu, Bingan; Wu, Yingpeng; Wang, Di-Yan; Guan, Mingyun; Angell, Michael; Chen, Changxin; Yang, Jiang; Hwang, Bing-Joe; Dai, Hongjie

    2015-04-01

    The development of new rechargeable battery systems could fuel various energy applications, from personal electronics to grid storage. Rechargeable aluminium-based batteries offer the possibilities of low cost and low flammability, together with three-electron-redox properties leading to high capacity. However, research efforts over the past 30 years have encountered numerous problems, such as cathode material disintegration, low cell discharge voltage (about 0.55 volts ref. 5), capacitive behaviour without discharge voltage plateaus (1.1-0.2 volts or 1.8-0.8 volts) and insufficient cycle life (less than 100 cycles) with rapid capacity decay (by 26-85 per cent over 100 cycles). Here we present a rechargeable aluminium battery with high-rate capability that uses an aluminium metal anode and a three-dimensional graphitic-foam cathode. The battery operates through the electrochemical deposition and dissolution of aluminium at the anode, and intercalation/de-intercalation of chloroaluminate anions in the graphite, using a non-flammable ionic liquid electrolyte. The cell exhibits well-defined discharge voltage plateaus near 2 volts, a specific capacity of about 70 mA h g-1 and a Coulombic efficiency of approximately 98 per cent. The cathode was found to enable fast anion diffusion and intercalation, affording charging times of around one minute with a current density of ~4,000 mA g-1 (equivalent to ~3,000 W kg-1), and to withstand more than 7,500 cycles without capacity decay.

  9. Aluminium hydroxide-induced granulomas in pigs

    DEFF Research Database (Denmark)

    Valtulini, S; Macchi, C; Ballanti, P;

    2005-01-01

    adjuvant) to pigs inoculated twice with apyrogenic bi-distilled water (group water) and to pigs inoculated once with the adjuvant and once with apyrogenic bi-distilled water (group adjuvant/water). Both studies agreed in their conclusions, which indicate that the high amount of aluminium hydroxide was the...

  10. Indentation of aluminium foam at low velocity

    Directory of Open Access Journals (Sweden)

    Shi Xiaopeng

    2015-01-01

    Full Text Available The indentation behaviour of aluminium foams at low velocity (10 m/s ∼ 30 m/s was investigated both in experiments and numerical simulation in this paper. A flat-ended indenter was used and the force-displacement history was recorded. The Split Hopkinson Pressure bar was used to obtain the indentation velocity and forces in the dynamic experiments. Because of the low strength of the aluminium foam, PMMA bar was used, and the experimental data were corrected using Bacon's method. The energy absorption characteristics varying with impact velocity were then obtained. It was found that the energy absorption ability of aluminium foam gradually increases in the quasi-static regime and shows a significant increase at ∼10 m/s velocity. Numerical simulation was also conducted to investigate this process. A 3D Voronoi model was used and models with different relative densities were investigated as well as those with different failure strain. The indentation energy increases with both the relative density and failure strain. The analysis of the FE model implies that the significant change in energy absorption ability of aluminium foam in indentation at ∼10 m/s velocity may be caused by plastic wave effect.

  11. Thoracic gallium uptake in patients with lymphomatoid granulomatosis

    International Nuclear Information System (INIS)

    Lymphomatoid granulomatosis (LG) is a rare condition with histological similarities to Wegener's granulomatosis and malignant lymphoma. Characteristically there is an angiocentric, angiodestructive lymphoreticular cell infiltrate. The lungs are usually affected, and, less frequently, the skin, nervous system, kidney, and bowel are involved. The prognosis is poor and frank lymphoma develops, in some cases terminally. The usual radiological appearance of the lungs consists of bilateral nodular lower zone opacities. The authors report two patients (siblings) with LG, and their gallium scans are presented. In each case there was a significant accumulation of gallium in the lungs at times of clinically active disease. The limited role of gallium imaging in this disease is discussed

  12. Limiting pump intensity for sulfur-doped gallium selenide crystals

    International Nuclear Information System (INIS)

    High optical quality undoped and sulfur-doped gallium selenide crystals were grown from melts by the modified vertical Bridgman method. Detailed study of the damage produced under femtosecond pulse exposure has shown that evaluation of the damage threshold by visual control is unfounded. Black matter spots produced on crystal surfaces do not noticeably decrease either its transparency or its frequency conversion efficiency as opposed to real damage identified as caked well-cohesive gallium structures. For the first time it was demonstrated that optimally sulfur-doped gallium selenide crystal possesses the highest resistivity to optical emission (about four times higher in comparison with undoped gallium selenide)

  13. Measurement of the solar neutrino capture rate with gallium metal

    CERN Document Server

    Abdurashitov, J N; Girin, S V; Gorbachev, V V; Ibragimova, T V; Kalikhov, A V; Khairnasov, N G; Knodel, T V; Mirmov, I N; Shikhin, A A; Veretenkin, E P; Vermul, V M; Yants, V E; Zatsepin, G T; Bowles, T J; Teasdale, W A; Wark, D L; Cherry, M L; Nico, J S; Cleveland, B T; Davis, R; Lande, K; Wildenhain, P S; Elliott, S R; Wilkerson, J F

    1999-01-01

    The solar neutrino capture rate measured by the Russian-American Gallium Experiment (SAGE) on metallic gallium during the period January 1990 through December 1997 is 67.2 (+7.2-7.0) (+3.5-3.0) SNU, where the uncertainties are statistical and systematic, respectively. This represents only about half of the predicted Standard Solar Model rate of 129 SNU. All the experimental procedures, including extraction of germanium from gallium, counting of 71Ge, and data analysis are discussed in detail.

  14. Reduction of metallic ions by molten gallium under ultrasonic irradiation and interactions between the formed metals and the gallium

    International Nuclear Information System (INIS)

    Graphical abstract: The XRD pattern and electron microscopy images of the product obtained by the reduction solution of CuSO4 by the molten Ga under ultrasonic wave. CuGa2 clearly obtained from the reaction. - Highlights: • Effect of ultrasonic cavitation and heterogeneous reduction in binary systems. • Dispersion of gallium into microparticles enhances tremendously the reduction rate. • The sonochemical reduction by Ga forms intermetallic like Ag2Ga, CuGa2 and AuGa2. - Abstract: Metallic gallium can reduce ions of silver, copper or gold in a slow spontaneous reaction to form the free metals. However, when the reduction is performed with molten gallium under ultrasonic irradiation, the gallium is dispersed into micrometric spheres and the reduction rate is enhanced dramatically. This is due to the large surface area of unoxidized gallium that is formed, on which the heterogeneous reduction occurs. Each of these metals formed also a certain amount of an intermetallic compound with the gallium: Ag2Ga, CuGa2 and AuGa2. Zinc has a more negative reduction potential than gallium and therefore no reduction of zinc ions was expected. Nevertheless we conducted an experiment using a solution of zinc ions to check whether the extremely high temperature that develops near the surface of the particles during cavitation can overcome the energetic barrier for such reduction

  15. Reduction of metallic ions by molten gallium under ultrasonic irradiation and interactions between the formed metals and the gallium

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Vijay Bhooshan; Perelshtein, Ilana [Bar-Ilan Institute for Nanotechnology and Advanced Materials, Department of Chemistry, Bar-Ilan University, Ramat-Gan 52900 (Israel); Kimmel, Giora [Institute of Applied Research, Ben-Gurion University of the Negev, Be’er Sheva 84105 (Israel); Porat, Ze’ev [Institute of Applied Research, Ben-Gurion University of the Negev, Be’er Sheva 84105 (Israel); Division of Chemistry, Nuclear Research Center-Negev, Be’er Sheva 84190 (Israel); Gedanken, Aharon, E-mail: gedanken@mail.biu.ac.il [Bar-Ilan Institute for Nanotechnology and Advanced Materials, Department of Chemistry, Bar-Ilan University, Ramat-Gan 52900 (Israel); National Cheng Kung University, Department of Materials Science & Engineering, Tainan 70101, Taiwan (China)

    2015-07-15

    Graphical abstract: The XRD pattern and electron microscopy images of the product obtained by the reduction solution of CuSO{sub 4} by the molten Ga under ultrasonic wave. CuGa{sub 2} clearly obtained from the reaction. - Highlights: • Effect of ultrasonic cavitation and heterogeneous reduction in binary systems. • Dispersion of gallium into microparticles enhances tremendously the reduction rate. • The sonochemical reduction by Ga forms intermetallic like Ag{sub 2}Ga, CuGa{sub 2} and AuGa{sub 2}. - Abstract: Metallic gallium can reduce ions of silver, copper or gold in a slow spontaneous reaction to form the free metals. However, when the reduction is performed with molten gallium under ultrasonic irradiation, the gallium is dispersed into micrometric spheres and the reduction rate is enhanced dramatically. This is due to the large surface area of unoxidized gallium that is formed, on which the heterogeneous reduction occurs. Each of these metals formed also a certain amount of an intermetallic compound with the gallium: Ag{sub 2}Ga, CuGa{sub 2} and AuGa{sub 2}. Zinc has a more negative reduction potential than gallium and therefore no reduction of zinc ions was expected. Nevertheless we conducted an experiment using a solution of zinc ions to check whether the extremely high temperature that develops near the surface of the particles during cavitation can overcome the energetic barrier for such reduction.

  16. Technology of obtaining of cryolite and aluminium fluoride from alumina- and fluoride containing wastes of aluminium production

    International Nuclear Information System (INIS)

    This article is devoted to technology of obtaining of cryolite and aluminium fluoride from alumina- and fluoride containing wastes of aluminium production. Thus, the investigations on elaboration of technology of obtaining of cryolite and aluminium fluoride from alumina- and fluoride containing wastes of aluminium production by means of sulfuric acid decomposition method are carried out. The optimal parameters of technological processes are found. The physicochemical analysis of fluoride containing wastes is conducted. The flowsheet of obtaining of cryolite, aluminium fluoride and alumina from alumina- and fluoride containing wastes is presented.

  17. Thin Films of Gallium Arsenide and Gallium Aluminum Arsenide by Metalorganic Chemical Vapor Deposition.

    Science.gov (United States)

    Look, Edward Gene Lun

    Low pressure metalorganic chemical vapor deposition (LPMOCVD) of thin films of gallium arsenide (GaAs) and gallium aluminum arsenide (GaAlAs) was performed in a horizontal cold wall chemical vapor deposition (CVD) reactor. The organometallic (group III) sources were triethylgallium (TEGa) and triethylaluminum (TEAl), used in conjunction with arsine (AsH_3) as the group V source. It was found that growth parameters such as growth temperature, pressure, source flow rates and temperatures have a profound effect on the film quality and composition. Depending on the particular combination of conditions, both the surface and overall morphologies may be affected. The films were nondestructively analyzed by Raman and photoreflectance spectroscopies, x-ray diffraction and rocking curve studies, scanning electron microscopy, energy dispersive spectroscopy, Hall measurements and film thicknesses were determined with a step profilometer.

  18. Neodymium doped gallium lanthanum sulphide glass fibre laser

    OpenAIRE

    Schweizer, T.; Samson, B.N.; Hewak, D.W.; Payne, D.N.

    1997-01-01

    We report laser action in a neodymium doped gallium lanthanum sulphide glass fibre at 1.08µm. To our knowledge, this is the first demonstration of laser action in a rare-earth doped chalcogenide glass fibre.

  19. Gallium Nitride Room Temperature α Particle Detectors

    International Nuclear Information System (INIS)

    Gallium Nitride (GaN) room temperature α particle detectors are fabricated and characterized, whose device structure is Schottky diode. The current-voltage (I – V) measurements reveal that the reverse breakdown voltage of the detectors is more than 200 V owing to the consummate fabrication processes, and that the Schottky barrier and ideal factor of the detectors are 0.64 eV and 1.02, respectively, calculated from the thermionic transmission model. 241Am α particles pulse height spectra from the GaN detectors biased at −8 V is obviously one Gauss peak located at channel 44 with the full width at half maximum (FWHM) of 15.87 in channel. One of the main reasons for the relatively wider FWHM is that the air between the detectors and isotope could widen the spectrum

  20. Gallium-Catalyzed Silicon Oxide Nanowire Growth

    Institute of Scientific and Technical Information of China (English)

    Zheng Wei Pan; Sheng Dai; Douglas H.Lowndes

    2005-01-01

    Silicon oxide nanowires tend to assemble into various complex morphologies through a metalcatalyzed vapor-liquid-solid (VLS) growth process. This article summarizes our recent efforts in the controlled growth of silicon oxide nanowire assemblies by using molten gallium as the catalyst and silicon wafer,SiO powder, or silane (SiH4) as the silicon sources. Silicon oxide nanowire assemblies with morphologies of carrotlike, cometlike, gourdlike, spindlelike, badmintonlike, sandwichlike, etc. were obtained. Although the morphologies of the nanowire assemblies are temperature- and silicon source-dependent, they share similar structural and compositional features: all the assemblies contain a microscale spherical liquid Ga ball and a highly aligned, closely packed amorphous silicon oxide nanowire bunch. The Ga-catalyzed silicon oxide nanowire growth reveals several interesting new nanowire growth phenomena that expand our knowledge of the conventional VLS nanowire growth mechanism.

  1. Cavity optomechanics in gallium phosphide microdisks

    CERN Document Server

    Mitchell, Matthew; Barclay, Paul E

    2013-01-01

    Gallium phosphide microdisk optical microcavities with intrinsic quality factors > 280,000 and mode volumes < (10 lambda/n)^3 are demonstrated, and their nonlinear and optomechanical properties are studied. For optical intensities up to 350,000 intracavity photons, optical loss within the microcavity is observed to decrease with increasing intensity, indicating that saturable absorption sites are present in the GaP material, and that two photon absorption is not significant. Optomechanical coupling between several mechanical resonances and the optical modes of the microdisk is observed, and an optical spring effect consistent with a theoretically predicted optomechanical coupling rate g_0~80 kHz is measured for the 488 MHz mechanical fundamental radial breathing mode.

  2. Gallium-67 scintigraphy in children with chronic granulomatous disease

    International Nuclear Information System (INIS)

    We review our experience with Gallium scintigraphy in three children with chronic granulomatous disease, an entity characterized by defective neutrophils and recurrent infection. Radiogallium was found to localize in inflammation in these patients. Hematologic disordrs with specific structural of biochemical defects in their polymorphonuclear leukocytes may provide important information as to how these cells contribute to the accumulation of Gallium-67 in inflammation. (orig./MG)

  3. The effect of copper and gallium compounds on ribonucleotide reductase

    Energy Technology Data Exchange (ETDEWEB)

    Narasimhan, J.

    1992-01-01

    The mode of action of copper complexes (CuL and CuKTS) and gallium compounds (gallium nitrate and citrate) in cytotoxicity was studied. The effects of these agents on the enzyme ribonucleotide reductase was investigated by monitoring the tyrosyl free radical present in the active site of the enzyme through electron spin resonance (ESR) spectroscopy. Ribonucleotide reductase, a key enzyme in cellular proliferation, consists of two subunits. M1, a dimer of molecular weight 170,000 contains the substrate and effector binding sites. M2, a dimer of molecular weight 88,000, contains non-heme iron and tyrosyl free radical essential for the activity of the enzyme. In studies using copper complexes, the cellular oxidative chemistry was examined by ESR studies on adduct formation with membranes, and oxidation of thiols. Membrane thiols were oxidized through the reduction of the ESR signal of the thiol adduct and the analysis of sulfhydryl content. Using the radiolabel [sup 59]Fe, the inhibitory action of copper thiosemicarbazones on cellular iron uptake was shown. The inhibitory action of CuL on ribonucleotide reductase was shown by the quenching of the tyrosyl free radical on the M2 subunit. The hypothesis that gallium directly interacts with the M2 subunit of the enzyme and displaces the iron from it was proven. The tyrosyl free radical signal from cell lysates was inhibited by the direct addition of gallium compounds. Gallium content in the cells was measured by a fluorimetric method, to ensure the presence of sufficient amounts of gallium to compete with the iron in the M2 subunit. The enzyme activity, measured by the conversion of [sup 14]C-CDP to the labeled deoxy CDP, was inhibited by the addition of gallium nitrate in a cell free assay system. The immunoprecipitation studies of the [sup 59]Fe labeled M2 protein using the monoclonal antibody directed against this subunit suggested that gallium releases iron from the M2 subunit.

  4. The status of the Soviet-American gallium neutrino experiment

    Energy Technology Data Exchange (ETDEWEB)

    Abazov, A.I.; Abdurashitov, D.N.; Anosov, O.L.; Bychuk, O.V.; Danshin, S.N.; Eroshkina, L.A.; Faizov, E.L.; Gavrin, V.N.; Gayevsky, V.I.; Girin, S.V.; Kalikhov, A.V.; Kireyev, S.M.; Knodel, T.V.; Knyshenko, I.I.; Kornoukhov, V.N.; Mezentseva, S.A.; Mirmov, I.N.; Ostrinsky, A.I.; Petukhov, V.V.; Pshukov, A.M.; Revzin, N.Ye.; Shikhin, A.A.; Slyusareva, Ye.D.; Tikhonov, A.A.; Timofeyev, P.V.; Veretenkin, E.P.; Vermul, V.M.; Yantz, V.E.; Zakharov, Yu.; Zatsepin, G.T.; Zhandarov, V.I. [AN SSSR, Moscow (USSR). Inst. Yadernykh Issledovanij; Bowles, T.J.; Cleveland, B.T.; Elliott, S.R.; O`Brien, H.A.; Wark, D.L.; Wilkerson, J.F. [Los Alamos National Lab., NM (United States); Davis, R. Jr.; Lande, K. [Pennsylvania Univ., Philadelphia (United States); Kouzes, R.T. [Princeton Univ., NJ (United States); Cherry, M.L.; SAGE Collaboration

    1990-02-01

    A radiochemical {sup 71}Ga-{sup 71}Ge experiment to determine the integral flux of neutrinos from the sun has been constructed at the Baksan Neutrino Observatory in the USSR. Measurements have begun with 30 tonnes of gallium. An additional 30 tonnes of gallium are being installed so as to perform the full experiment with a 60 tonne target. The motivation, experimental procedures, and present status of this experiment are described. (orig.).

  5. Raman study of gallium selenide single crystal oxidation

    Directory of Open Access Journals (Sweden)

    O.A. Balitskii

    2001-06-01

    Full Text Available The Raman investigations on thermally oxidized gallium selenide were conducted. It was established that the oxidation of the GaSe involves the formation of a-modification of Ga2Se3 at the temperature up to 450 °C. The Ga-(O2 complexes are also detected at this temperature but the formation of crystalline gallium oxide takes place at the temperature of 800°C

  6. Gallium arsenide p-type low temperature thermometers

    International Nuclear Information System (INIS)

    The use of p-type gallium arsenide for resistance thermometry is discussed. This semiconductor can be used for creating a family of thermometers with sufficiently small magnetoresistance and high sensitivity for the 0.3 - 350 K range. Performance characteristics of gallium arsenide doped with zinc, cadmium and manganese in the 1016 - 1018 cm-3 range of concentration and magnetoresistance in fields of up to 5T are examined. (author)

  7. Gallium Nitride Schottky betavoltaic nuclear batteries

    Energy Technology Data Exchange (ETDEWEB)

    Lu Min, E-mail: mlu2006@sinano.ac.c [Su zhou Institute of Nano-technology and Nano-bionics, CAS, Su zhou 215125 (China); Zhang Guoguang [China Institute of Atomic Energy, Beijing 102413 (China); Fu Kai; Yu Guohao [Su zhou Institute of Nano-technology and Nano-bionics, CAS, Su zhou 215125 (China); Su Dan; Hu Jifeng [China Institute of Atomic Energy, Beijing 102413 (China)

    2011-04-15

    Research highlights: {yields} Gallium Nitride nuclear batteries with Ni-63 are demonstrated for the first time. {yields} Open circuit voltage of 0.1 V and conversion efficiency of 0.32% have been obtained. {yields} The limited performance is due to thin effective energy deposition layer. {yields} The output power is expected to greatly increase with growing thick GaN films. -- Abstract: Gallium Nitride (GaN) Schottky betavoltaic nuclear batteries (GNBB) are demonstrated in our work for the first time. GaN films are grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD), and then GaN Schottky diodes are fabricated by normal micro-fabrication process. Nickel with mass number of 63 ({sup 63}Ni), which emits {beta} particles, is loaded on the GaN Schottky diodes to achieve GNBB. X-ray diffraction (XRD) and photoluminescence (PL) are carried out to investigate the crystal quality for the GaN films as grown. Current-voltage (I-V) characteristics shows that the GaN Schottky diodes are not jet broken down at -200 V due to consummate fabrication processes, and the open circuit voltage of the GNBB is 0.1 V and the short circuit current density is 1.2 nA cm{sup -2}. The limited performance of the GNBB is due to thin effective energy deposition layer, which is only 206 nm to absorb very small partial energy of the {beta} particles because of the relatively high dislocation density and carrier concentration. However, the conversion efficiency of 0.32% and charge collection efficiency (CCE) of 29% for the GNBB have been obtained. Therefore, the output power of the GNBB are expected to greatly increase with growing high quality thick GaN films.

  8. Gallium Nitride Schottky betavoltaic nuclear batteries

    International Nuclear Information System (INIS)

    Research highlights: → Gallium Nitride nuclear batteries with Ni-63 are demonstrated for the first time. → Open circuit voltage of 0.1 V and conversion efficiency of 0.32% have been obtained. → The limited performance is due to thin effective energy deposition layer. → The output power is expected to greatly increase with growing thick GaN films. -- Abstract: Gallium Nitride (GaN) Schottky betavoltaic nuclear batteries (GNBB) are demonstrated in our work for the first time. GaN films are grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD), and then GaN Schottky diodes are fabricated by normal micro-fabrication process. Nickel with mass number of 63 (63Ni), which emits β particles, is loaded on the GaN Schottky diodes to achieve GNBB. X-ray diffraction (XRD) and photoluminescence (PL) are carried out to investigate the crystal quality for the GaN films as grown. Current-voltage (I-V) characteristics shows that the GaN Schottky diodes are not jet broken down at -200 V due to consummate fabrication processes, and the open circuit voltage of the GNBB is 0.1 V and the short circuit current density is 1.2 nA cm-2. The limited performance of the GNBB is due to thin effective energy deposition layer, which is only 206 nm to absorb very small partial energy of the β particles because of the relatively high dislocation density and carrier concentration. However, the conversion efficiency of 0.32% and charge collection efficiency (CCE) of 29% for the GNBB have been obtained. Therefore, the output power of the GNBB are expected to greatly increase with growing high quality thick GaN films.

  9. Indium-111 autologous leukocyte imaging in pancreatitis

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, J.R.; Spence, R.A.; Laird, J.D.; Ferguson, W.R.; Kennedy, T.L.

    1986-03-01

    Thirty-nine patients with acute pancreatitis have been assessed using a prognostic factor grading system, abdominal ultrasound, and autologous leukocyte imaging. Both prognostic factor grading and leukocyte imaging can accurately assess the severity of the disease early in its course. All patients with a negative indium-labeled leukocyte image recovered without sequelae, whereas five of the 12 patients with a positive image developed complications, including two deaths. Abdominal ultrasound is of no value in assessing severity, but is a useful method of detecting those patients with gallstone-associated disease. In patients with suspected abscess formation following acute pancreatitis, indium leukocyte imaging does not differentiate between fat necrosis and abscess formation. In this situation, computerized tomography should be carried out before laparotomy is undertaken.

  10. Sorption of indium (III) onto carbon nanotubes.

    Science.gov (United States)

    Alguacil, F J; Lopez, F A; Rodriguez, O; Martinez-Ramirez, S; Garcia-Diaz, I

    2016-08-01

    Indium has numerous applications in different industrial sectors and is not an abundant element. Therefore appropriate technology to recover this element from various process wastes is needed. This research reports high adsorption capacity of multiwalled carbon nanotubes (MWCNT) for In(III). The effects of pH, kinetics, isotherms and adsorption mechanism of MWCNT on In(III) adsorption were investigated and discussed in detail. The pH increases improves the adsorption capacity for In(III). The Langmuir adsorption model is the best fit with the experimental data. For the kinetic study, the adsorption onto MWCNT could be fitted to pseudo second-order. The adsorption of indium(III) can be described to a mechanism which consists of a film diffusion controlled process. Metal desorption can be achieved with acidic solutions. PMID:27085001

  11. Non-Stoichiometric Amorphous Indium Selenide Thin Films as a Buffer Layer for CIGS Solar Cells with Various Temperatures in Rapid Thermal Annealing.

    Science.gov (United States)

    Yoo, Myoung Han; Kim, Nam-Hoon

    2016-05-01

    The conventional structure of most of copper indium gallium diselenide (Culn(1-x)Ga(x)Se2, CIGS) solar cells includes a CdS thin film as a buffer layer. Cd-free buffer layers have attracted great interest for use in photovoltaic applications to avoid the use of hazardous and toxic materials. The RF magnetron sputtering method was used with an InSe2 compound target to prepare the indium selenide precursor. Rapid thermal annealing (RTA) was conducted in ambient N2 gas to control the concentration of volatile Se from the precursor with a change in temperature. The nature of the RTA-treated indium selenide thin films remained amorphous under annealing temperatures of ≤ 700 degrees C. The Se concentration of the RTA-treated specimens demonstrated an opposite trend to the annealing temperature. The optical transmittance and band gap energies were 75.33% and 2.451-3.085 eV, respectively, and thus were suitable for the buffer layer. As the annealing temperature increased, the resistivity decreased by an order-of-magnitude from 10(4) to 10(1) Ω-cm. At lower Se concentrations, the conductivity abruptly changed from p-type to n-type without crystallite formation in the amorphous phase, with the carrier concentration in the order of 10(17) cm(-3). PMID:27483873

  12. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    Energy Technology Data Exchange (ETDEWEB)

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

    1990-12-01

    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  13. Indium Antimonide Nanowires: Synthesis, Characterization, and Applications

    OpenAIRE

    Penchev, Miroslav Valentinov

    2012-01-01

    Indium Antimonide (InSb) nanowires with a diameter ranging from 30 nm to 200 nm, were synthesized by electrochemical disposition in anodized alumina and polycarbonate porous membranes. In addition, epitaxial single crystalline InSb nanowires with diameters ranging from 5 nm to 100 nm, were synthesized by chemical vapor deposition (CVD) using Au nanoparticles as catalyst. Structural and material characterization of InSb nanowires was carried out by scanning electron microscopy (SEM), energy di...

  14. Radioassay process using an indium-8-hydroxyquinoline

    International Nuclear Information System (INIS)

    There is disclosed an in vivo radioassay process in which a radioactive chelate of indium and an 8-hydroxyquinoline is introduced into a warmblooded animal having an inflammatory reaction in an area in which the chelate would not accumulate to the same extent if the inflammation were not present. The chelate gathers in the inflamed area, for instance, in a body abscess and its location is determined by radio surveying the body by an external imaging technique. (author)

  15. Harmonic generation from indium-rich plasmas

    International Nuclear Information System (INIS)

    An experimental study of high-order harmonic generation in In, InSb, InP, and InGaP plasmas using femtosecond laser radiation with variable chirp is presented. Intensity enhancement of the 13th and 21st harmonics compared to the neighboring harmonics by a factor of 200 and 10, respectively, is observed. It is shown that the harmonic spectrum from indium-containing plasma plumes can be considerably modified by controlling the chirp of the driving laser pulse

  16. Recovery of indium and lead from lead bullion

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Lead and indium were recovered by electrolysis and nonequilibrium solvent extraction process from lead bullion.The effects of current density,electrolytic period and circle amnant of electrolyte on the electrochemical dissolution of lead and indium were investigated.The effects of extraction phase ratio and mixing time on solvent extraction of indium and striping phase ratio and stripping stage on the loaded organic phase stripping were also investigated.The experimental results indicate that under optimum conditions,the purity of lead deposited on cathode is 98.5% and the deposit rate of lead is 99.9%,the dissolution rate of indium is 94.28%,the extraction rate of indium is 98.69%,the stripping rate of indium is almost 100%,and the impurity elements,such as Zn,Fe and Sn can be removed.

  17. Radionuclide distribution following injection of 111indium-labelled platelets

    International Nuclear Information System (INIS)

    Platelets labelled with 111In displayed similar survival curves after incubation with 111In-oxine in plasma, plasma-saline and dextrose saline media. The use of autologous red cells to cushion platelets during high-speed centrifugation facilitated platelet resuspension without greatly affecting the duration of the labelling procedure. Quantitative scanning after reinjection of labelled platelets in haematologically normal subjects showed that, initially, splenic indium amounted to about 35% of the injected dose and hepatic indium about 12%; these levels rose only slightly over the subsequent duration of the platelet life span. Subtraction of the signal from indium in platelets thought to be normally pooled within the spleen from the total indium signal gave splenic indium uptake curves which reflected splenic platelet destruction. Initially, the sum of indium levels in spleen, liver and blood equalled 100% of the dose. Thereafter, the sum fell progressively at a rate thought to be approximately equal to the rate of bone marrow uptake. (author)

  18. Study on indium leaching from mechanically activated hard zinc residue

    OpenAIRE

    Yao J.H.; Li X.H.; Li Y.W.

    2011-01-01

    In this study, changes in physicochemical properties and leachability of indium from mechanically activated hard zinc residue by planetary mill were investigated. The results showed that mechanical activation increased specific surface area, reaction activity of hard zinc residue, and decreased its particle size, which had a positive effect on indium extraction from hard zinc residue in hydrochloric acid solution. Kinetics of indium leaching from unmilled and activated hard zinc residue...

  19. Steam Initiated Surface Modification of Aluminium Alloys

    DEFF Research Database (Denmark)

    Din, Rameez Ud

    detailed analysis of the structure and morphology of the coating, and interface structure with and without organic top coat. Corrosion performance of the coatings was investigated using electrochemical methods, AASS, and FFC test. The morphology, microstructure, chemical composition, adhesion, and......The extensive demand of aluminium alloys in various industries such as in transportationis mainly due to the high strength to weight ratio, which could be translated into fuel economy and efficiency. Corrosion protection of aluminium alloys is an important aspect for all applications which includes......-friendly alternative processes. In the present work high temperature steam-based process has been investigated as a possible chromate free conversion coating. Investigations in the thesis includes the effect of alloy type, substrate microstructure, surface finish, and various chemistries on the coating formation, and...

  20. Studies on an aluminium-carbon cell

    Science.gov (United States)

    Verma, L. K.

    The current-voltage behaviour of an electrochemical cell that consists of an aluminium anode and a carbon cathode in a medium containing aqueous NH 4SCN has been studied, both in the presence and in the absence of a coating on the carbon electrode. It is found that activation polarization is the main factor that limits the current output when using an untreated carbon electrode. This problem is eliminated by coating the carbon electrode with an in situ deposition of HgI 2. In this condition, the current output is reduced mainly by ohmic polarization. Further studies with a coated HgI 2-carbon cathode and an aluminium anode, in a medium containing SCN - and Cl - ions together with a complexing agent (EDTA, sodium salt), revealed that a cell performance close to ideal, (i.e, showing no appreciable polarization) can be obtained at currents up to 0.6 mA/cm 2 and above.

  1. Straggling of heavy ions in aluminium

    International Nuclear Information System (INIS)

    An effort has been made to determine the straggling in aluminium of 4He, 16O and 35Cl ions of different energies produced by the tandem Van de Graaff at Harwell. The technique consists of scattering the accelerated and collimated ions in a scattering chamber from a 0.100 mg/cm2 gold foil, allowing the scattered ions to pass through a two aperture collimator, using different aluminium foils over one of the apertures and stopping the two emergent beams in a good quality silicon surface barrier detector the output of which is connected to a 4096 channel analyser. The energy widths obtained in the case of helium ions are in fair agreement with both the Bloch and the recent Tschalar (1968) theory. The measured widths in the case of heavy ions are very large and can be explained only if account is taken of their charge distributions in foils. This study should be useful in ion implantation work. (author)

  2. New indium selenite-oxalate and indium oxalate with two- and three-dimensional structures

    International Nuclear Information System (INIS)

    Two new indium(III) compounds with extended structures, [In2(SeO3)2(C2O4)(H2O)2].2H2O (I) and [NH3(CH2)2NH3][In(C2O4)2]2.5H2O (II), have been prepared under mild hydrothermal conditions and structurally characterized by single-crystal X-ray diffraction, thermogravimetric analysis and infrared spectroscopy. Compound I crystallizes in the triclinic system, space group P-1, with a=5.2596(11) A, b=6.8649(14) A, c=9.3289(19) A, α=101.78(3)o, β=102.03(3)o, γ=104.52(3)o, while compound II crystallizes in the orthorhombic system, space group Fdd2, with a=15.856(3) A, b=31.183(6) A, c=8.6688(17) A. In compound I, indium-selenite chains are bridged by oxalate units to form two-dimensional (2D) In2(SeO3)2C2O4 layers, separated by non-coordinating water molecules. In compound II, the indium atoms are connected through the oxalate units to generate a 3D open framework containing cross-linked 12- and 8-membered channels. - Graphical abstract: Two new indium(III) compounds have been hydrothermally synthesized and structurally characterized. In I, the indium-selenite chains are bridged by oxalate units to form 2D In2(SeO3)2C2O4 layers. In II, the indium atoms are connected through the oxalate units to generate a 3D open framework containing cross-linked 12- and 8-membered ring channels

  3. Subclinical interstitial lung damage in workers exposed to indium compounds

    OpenAIRE

    Choi, Sungyeul; Won, Yong-Lim; Kim, Dohyung; Yi, Gwang-Yong; Park, Jai-Soung; Kim, Eun-A

    2013-01-01

    Objectives The present study was designed to determine whether there is a relationship between indium compound exposure and interstitial lung damage in workers employed at indium tin oxide manufacturing and reclaiming factories in Korea. Methods In 2012, we conducted a study for the prevention of indium induced lung damage in Korea and identified 78 workers who had serum indium or Krebs von den Lungen-6 (KL-6) levels that were higher than the reference values set in Japan (3 μg/L and 500 U/mL...

  4. Investigation into leaching of indium-containing sulfide cake

    International Nuclear Information System (INIS)

    Data are given of laboratory investigations into indium leaching from commercial-grade sulfide cake. Two indium extraction methods are studied: exchange sulfide decomposition by blue vitriol treatment, sulfide destruction by means of an oxidizer where manganese ore containing manganese dioxide and zinc cake containing zinc ferrite have been used. The influence of the reagent consumption temperature, duration of leaching on the indium extraction is estimated as well as into on the Copper and arsenic transport into the solution. Optimal conditions for the indium extraction from sulfide cake under salt leaching and oxidizing treatment are established

  5. InP (Indium Phosphide): Into the future

    International Nuclear Information System (INIS)

    Major industry is beginning to be devoted to indium phosphide and its potential applications. Key to these applications are high speed and radiation tolerance; however the high cost of indium phosphide may be an inhibitor to progress. The broad applicability of indium phosphide to many devices will be discussed with an emphasis on photovoltaics. Major attention is devoted to radiation tolerance and means of reducing cost of devices. Some of the approaches applicable to solar cells may also be relevant to other devices. The intent is to display the impact of visionary leadership in the field and enable the directions and broad applicability of indium phosphide

  6. Preparation for Ultra High Pure Indium Metal for Optoelectronic Applications

    Directory of Open Access Journals (Sweden)

    Shashwat V. Joshi

    2014-11-01

    Full Text Available Ultra high pure Indium metal is extensively used in optoelectronic devices. Indium and its alloys become potential candidates in aerospace, defense and communication sectors. Purification of Indium has been done by Instrolec-200 Refiner followed by Directional Melting/ Freezing and Solidification Systems. Major targeted impurities are Metallic impurities Ag, Al, As, Bi, Ca, Cu, Fe, Ga, Ge, Mg, Pb, Sb, Si, Sn, and Zn. Purified Indium is characterized by analytical techniques Inductively Coupled Plasma- Optical Emission Spectrophotometry and Inductively Coupled Plasma- Mass Spectrometry.

  7. FSW characterization of 6082 aluminium alloys sheets

    OpenAIRE

    K. Mroczka; A. Pietras

    2009-01-01

    Purpose: The purpose of the investigations was to elaborate a set of FSW parameters for connecting 6082 aluminium alloy sheets allowing to produce welds of highest strength.Design/methodology/approach: The FSW was tried at different speeds and at additional cooling. The welds microstructure was studied using optical and scanning electron microscopes. The mechanical properties of produced connections are discussed regarding their tensile test and microhardness measurements.Findings: The FSW we...

  8. Aluminium-based Coatings for Cadmium Replacement

    OpenAIRE

    Cardilli , Emanuele

    2008-01-01

    Cadmium electroplating is widely used in the aerospace industry for the corrosion protection of high strength steels. Cadmium is also used as compatible coating to reduce the galvanic corrosion generated in the assembly of components manufactured with different materials. However, environmental and safety concerns over the high toxicity of cadmium has led to the investigation of suitable replacements. Aluminium coatings are promising coatings for the replacement of electropl...

  9. Aluminium matrix composites fabricated by infiltration method

    OpenAIRE

    L.A. Dobrzański; M. Kremzer; A. J. Nowak; Nagel, A.

    2009-01-01

    Purpose: The aim of this work is to examine the structure and properties of metal matrix composites obtained by infiltration method of porous ceramic preforms by liquid aluminium alloy.Design/methodology/approach: Ceramic preforms were manufactured by the sintering method of ceramic powder. The preform material consists of powder Condea Al2O3 CL 2500, however, as the pore forming the carbon fibers Sigrafil C10 M250 UNS were used. Then ceramic preforms were infiltrated with liquid eutectic EN ...

  10. Quantitative evaluation of the aluminium titanate formation

    International Nuclear Information System (INIS)

    Samples of aluminium titanate were obtained under isothermal sintering condition in equimolar Al2 O3 Ti O2 powder mixtures at different soaking time intervals. The formation of Al2 Ti O5 and the effect of Si O2 additive in the reaction and densification were analysed. Quantitative evaluation of Al2 Ti O5 was performed by the Rietveld method and by using an internal standard. Both methods were considered appropriated for the presented purpose. (author)

  11. Methods of inoculation of pure aluminium structure

    Directory of Open Access Journals (Sweden)

    J. Szajnar

    2008-03-01

    Full Text Available Purpose: The main aim of investigations was the reduction of grain size and unification of structure for pure Al casting by introduction of small amount of inoculant (less than obligatory standart PN-EN 573-3, which concerning about aluminium purity, with electromagnetic field and variable casting parameters.Design/methodology/approach: To investigations it was used light microscopy and TEM. Surfaces of samples which were prepared for macro- and microstructure analysis were etched with use of solution of: 50g Cu, 400ml HCl, 300ml HNO3 and 300ml H2O. Thin foils for TEM investigations were electropolished with use of 20 ml HClO4 and 80ml CH3OH.Findings: The results of investigations and their analysis show possibility of effective inoculation of pure aluminium structure by use of some factors such as: different materials of the mould, influencing of stirring electromagnetic field into metal during solidification, inoculation by introducing AlTi5B1 inoculant into liquid aluminium and changing the pouring temperature.Research limitations/implications: I further research, authors of this paper are going to application of introduced method of inoculation in industrial tests.Practical implications: The work presents refinement of structure method which are particularly important in continuous and semi – continuous casting where products are used for plastic forming. Large columnar crystals zone result in forces extrusion rate reduction and during the ingot rolling delamination of external layers can occur. Thus, in some cases ingot skinning is needed, which rises the production costs.Originality/value: Contributes to research on size reduction in pure aluminium structure.

  12. Perforation of aluminium alloy thin plates

    OpenAIRE

    ANTOINAT, Léonard; Kubler, Régis; BAROU, Jean Luc; VIOT, Philippe; BARRALLIER, Laurent

    2015-01-01

    Low velocity perforation of aeronautical aluminium alloy sheets 2024 T3 is studied in this paper. After a literature review on recent experiments and models of plate’s perforation, experimental results for 2 thicknesses (2 mm and 4 mm) of plates are presented. Perforation tests are performed with an instrumented drop test. The striker has a large diameter and a conical shape nose. Two models for perforation are presented and calibrated to bring a better understanding of the experiments. The f...

  13. Aluminium phosphide poising: a case report

    International Nuclear Information System (INIS)

    This paper reports the case of a family in which three children were presented at Emergency Room (ER) with poisoning after the use of a pesticide at home. Initially, the cases were managed as routine cases of organophosphorus poisoning; however, the death of two children made the health team members realise that the poison's effects were delayed and devastating. Later, the compound was identified as Aluminium Phosphide (ALP), and the life of the last surviving child in the family was saved. (author)

  14. First wall design of aluminium alloy R-tokamak

    International Nuclear Information System (INIS)

    A design study of a low-activation D-T tokamak Reacting Plasma Project In Nagoya has been finished. The study emphasizes the vacuum vessel and the bumper limiter. Our choice of materials (aluminium vacuum vessel, copper conductors, aluminium TF coil case and lead shield) results in a radiation level of about 1 x 10-3 times that of a TFTR type design, and 1 x 10-4 times that of JET type design, at 2 weeks after one D-T shot. Thick graphite tiles will be fixed directly on the aluminium vacuum vessel using aluminium spring washers and bolts. With this simplified structure of the bumper limiter, the inner surface temperature of the thick aluminium vacuum vessel will be less than 1200C which is required to reduce the overaging effect of the aluminium alloy. (orig.)

  15. Feet sunk in molten aluminium: The burn and its prevention.

    Science.gov (United States)

    Alonso-Peña, David; Arnáiz-García, María Elena; Valero-Gasalla, Javier Luis; Arnáiz-García, Ana María; Campillo-Campaña, Ramón; Alonso-Peña, Javier; González-Santos, Jose María; Fernández-Díaz, Alaska Leonor; Arnáiz, Javier

    2015-08-01

    Nowadays, despite improvements in safety rules and inspections in the metal industry, foundry workers are not free from burn accidents. Injuries caused by molten metals include burns secondary to molten iron, aluminium, zinc, copper, brass, bronze, manganese, lead and steel. Molten aluminium is one of the most common causative agents of burns (60%); however, only a few publications exist concerning injuries from molten aluminium. The main mechanisms of lesion from molten aluminium include direct contact of the molten metal with the skin or through safety apparel, or when the metal splash burns through the pants and rolls downward along the leg. Herein, we report three cases of deep dermal burns after 'soaking' the foot in liquid aluminium and its evolutive features. This paper aims to show our experience in the management of burns due to molten aluminium. We describe the current management principles and the key features of injury prevention. PMID:25687835

  16. Toxicity of dissolved and precipitated aluminium to marine diatoms.

    Science.gov (United States)

    Gillmore, Megan L; Golding, Lisa A; Angel, Brad M; Adams, Merrin S; Jolley, Dianne F

    2016-05-01

    Localised aluminium contamination can lead to high concentrations in coastal waters, which have the potential for adverse effects on aquatic organisms. This research investigated the toxicity of 72-h exposures of aluminium to three marine diatoms (Ceratoneis closterium (formerly Nitzschia closterium), Minutocellus polymorphus and Phaeodactylum tricornutum) by measuring population growth rate inhibition and cell membrane damage (SYTOX Green) as endpoints. Toxicity was correlated to the time-averaged concentrations of different aluminium size-fractions, operationally defined as permeability were observed for any of the three diatoms suggesting that mechanisms of aluminium toxicity to diatoms do not involve compromising the plasma membrane. These results indicate that marine diatoms have a broad range in sensitivity to aluminium with toxic mechanisms related to both dissolved and precipitated aluminium. PMID:26921729

  17. Aluminium matrix composites fabricated by infiltration method

    Directory of Open Access Journals (Sweden)

    L.A. Dobrzański

    2009-03-01

    Full Text Available Purpose: The aim of this work is to examine the structure and properties of metal matrix composites obtained by infiltration method of porous ceramic preforms by liquid aluminium alloy.Design/methodology/approach: Ceramic preforms were manufactured by the sintering method of ceramic powder. The preform material consists of powder Condea Al2O3 CL 2500, however, as the pore forming the carbon fibers Sigrafil C10 M250 UNS were used. Then ceramic preforms were infiltrated with liquid eutectic EN AC – AlSi12 aluminum alloy. Stereological and structure investigations of obtained composite materials were made on light microscope. The mechanical properties of obtained composite material were investigated in tensile strength test and hardness test.Findings: It was proved that developed technology of manufacturing of composite materials based on the porous ceramic Al2O3 preforms infiltrated by liquid aluminium alloy ensures expected structure and strength Hardness increased about twice compared to the matrix and this process can be used in practice.Practical implications: The presented metal matrix composites fabrication technology allows to obtain locally reinforced elements and near net shape products.Originality/value: Results show the possibility of obtaining the new aluminium matrix composite materials being the cheaper alternative for other materials based on the ceramic fibers.

  18. Plasmonic enhancement of photoluminescence from aluminium nitride

    Science.gov (United States)

    Flynn, Chris; Stewart, Matthew

    2016-03-01

    Aluminium nitride (AlN) films were grown on c-plane sapphire wafers by molecular beam epitaxy (MBE) under aluminium-rich conditions. The excess aluminium (Al) accumulated on the surface of the films as micro-scale droplets 1-10 μm in size, and as Al nanoparticles with diameters in the range 10-110 nm. Photoluminescence (PL) measurements were performed on the AlN samples using a 193 nm Excimer laser as the excitation source. Prior to PL measurements the wafers were cleaved in half. One half of each wafer was submitted to a 10 min treatment in H3PO4 heated to 70 °C to remove the excess Al from the film surface. The remaining half was left in the as-deposited condition. The mean intensities of the near-band-edge PL peaks of the as-deposited samples were 2.0-3.4 times higher compared to the samples subjected to the H3PO4 Al-removal treatment. This observation motivated calculations to determine the optimal Al surface nanosphere size for plasmonic enhancement of PL from AlN. The PL enhancement was found to peak for an Al nanosphere radius of 15 nm, which is within the range of the experimentally-observed Al nanoparticle sizes.

  19. Behaviour and design of aluminium alloy structural elements

    OpenAIRE

    Su, Meini; 蘇玫妮

    2014-01-01

    Aluminium alloys are nonlinear metallic materials with continuous stress-strain curves that are not well represented by the simplified elastic, perfectly plastic material model used in most existing design specifications. The aims of this study are to develop a more efficient design method for aluminium alloy structures by rationally exploiting strain hardening. The key components of this study include laboratory testing, numerical modelling and development of design guidance for aluminium al...

  20. Friction factor of CP aluminium and aluminium–zinc alloys

    Indian Academy of Sciences (India)

    N Vidhya Sagar; K S Anand; A C Mithun; K Srinivasan

    2006-12-01

    Friction factor has been determined for CP aluminium and aluminium–zinc alloys using ring compression test at different temperatures from 303 K to 773 K. It is found that CP aluminium exhibits sticking whereas Al–Zn alloys do not exhibit sticking at elevated temperatures. Hot working of Al–Zn alloy is easier than that of CP aluminium at 773 K. As zinc content increases up to 10 wt% the friction factor decreases up to 0.02.

  1. Softening Behaviour of Selected Commercially Pure Aluminium Model Alloys

    OpenAIRE

    Sande, Gunnar

    2012-01-01

    A characterization of the softening behaviour of four different commercially pure aluminium alloys has been carried out. The work is related to the MOREAL project (Modelling towards value-added recycling friendly aluminium alloys), where the main goal is to quantify the effect of the elements in recyclable aluminium alloys on microstructure and mechanical properties during thermo-mechanical processing. Typical elements are iron (Fe), silicon (Si) and manganese (Mn), and the alloys studied in ...

  2. Aluminium supplier selection for the automotive parts manufacturer

    OpenAIRE

    M. Cieśla

    2016-01-01

    This paper presents a methodology for selection of the optimal sources of supply, which is also known as the problem of supplier selection. Theoretical considerations are expanded with research related to aluminium supplier selection for a hypothetical manufacturer of aluminium parts for transportation equipment located in Poland. Evaluation of five suppliers of aluminium from Poland, Germany and Slovenia has been conducted using a weighted scoring method, a strengths and weaknesses method an...

  3. Multiply-negatively charged aluminium clusters and fullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Walsh, Noelle

    2008-07-15

    Multiply negatively charged aluminium clusters and fullerenes were generated in a Penning trap using the 'electron-bath' technique. Aluminium monoanions were generated using a laser vaporisation source. After this, two-, three- and four-times negatively charged aluminium clusters were generated for the first time. This research marks the first observation of tetra-anionic metal clusters in the gas phase. Additionally, doubly-negatively charged fullerenes were generated. The smallest fullerene dianion observed contained 70 atoms. (orig.)

  4. Tribological characteristics of coatings on aluminium and its alloys

    OpenAIRE

    Abdul-Mahdi, Fadhil S

    1987-01-01

    This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University. Hard anodising on aluminium and its alloys has been widely practised for many years in order to improve the resistance of the otherwise poor wear characteristics of aluminium. In recent years there has been an increasing interest in other treatments and coatings, on both aluminium and other base metals. The aim of this investigation is to explain the tribological performance and wear mechanis...

  5. Wearing tests on aluminium coated with diamond by triboadhesion

    Institute of Scientific and Technical Information of China (English)

    J.M.RodríguezLelis; B.D.Angulo; J.O.Colín; J.PorcayoCalderón

    2001-01-01

    In this work the results obtained from subjecting aluminium coated with diamond by tri-boadhesion to a wearing process with a plane rider. Here it is shown the ratio of the normal toshearing forces, called friction factor, as an indication of the resistance of the surface. It was foundthat the film of the aluminium coated with diamond resisted three times compared with the oxida-tion film of commercial aluminium, which for the purpose of this work was considered withoutcoating.

  6. Un-optimistic Prospects for the Westward Movement of Aluminium

    Institute of Scientific and Technical Information of China (English)

    2014-01-01

    <正>The westward movement of aluminium is essential for the industrial development.Up till now,the northwestern area has planned to construct more than 40 aluminium projects with a total production capacity of over 20 million tons.The future rate of progress of newly constructed projects are directly related to the supplies of the aluminium market,having critical guiding meaning for the trends of

  7. Corrosion of Metal-Matrix Composites with Aluminium Alloy Substrate

    Directory of Open Access Journals (Sweden)

    B. Bobic

    2010-03-01

    Full Text Available The corrosion behaviour of MMCs with aluminium alloy matrix was presented. The corrosion characteristics of boron-, graphite-, silicon carbide-, alumina- and mica- reinforced aluminium MMCs were reviewed. The reinforcing phase influence on MMCs corrosion rate as well as on various corrosion forms (galvanic, pitting, stress corrosion cracking, corrosion fatique, tribocorrosion was discussed. Some corrosion protection methods of aluminium based MMCs were described

  8. Synthesis of aluminium nanoparticles by arc evaporation of an aluminium cathode surface

    Indian Academy of Sciences (India)

    M Gazanfari; M Karimzadeh; S Ghorbani; M R Sadeghi; G Azizi; H Karimi; N Fattahi; Z Karimzadeh

    2014-06-01

    Aluminium nanoparticles (Al Nps) are synthesized using arc discharge method by applying direct current between aluminium electrodes in liquid environment without any use of vacuum equipment, heat exchangers, high temperatures furnaces and inert gases. After synthesis of Al Nps, in situ coating process on the nanoparticles was performed immediately. The effects of media on the yield and morphology of aluminium nanoparticles were investigated. Analysis result of the samples indicated that particle size was less than 30 nm, when 120 A/cm2 arc current was used. In addition, coating agent can affect arc velocity, arc stability, morphology and composition of the nanoparticles. Resultant nanoparticles were identified using X-ray powder diffraction (XRD), also their surface morphology was studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) and finally the accuracy of coating was assessed with infrared (IR) spectroscopy.

  9. Thermal formation of corundum from aluminium hydroxides prepared from various aluminium salts

    Indian Academy of Sciences (India)

    J Temuujin; Ts JADAMBAA; K J D Mackenzie; P Angerer; F Porte; F Riley

    2000-08-01

    Aluminium hydroxides have been precipitated from various aluminium salts and the differences in their thermal behaviour have been investigated. Pseudoboehmite derived from the nitrate, sulfate and chloride all form -Al2O3 at ∼ 400°C but the formation of -Al2O3 at 1200°C occurs more readily in the material derived from the sulfate. This contains a higher concentration of anionic impurities related to differences in the solubility of the original aluminium salts. The sulfate is retained in the gel to higher temperatures at which its eventual decomposition may lead to the formation of a reactive pore structure which facilitates the nucleation of -Al2O3.

  10. Aluminium composite casting dispersion reinforced with iron-aluminium and silicon carbide phases

    Directory of Open Access Journals (Sweden)

    B. Formanek

    2010-10-01

    Full Text Available Aluminium matrix composite with dispersion-reinforced, made by similar to stircasting process was characterised. The mixture of powders was produced by the process of mechanical agglomeration of powdered FexAly and SiC with aluminium. The chemical composition ofagglomerates was selected in a way such as to obtain 25 wt.% reinforcement of the AlSi9Cu4 silumin matrix. Applying thermal analysis ATD, the alloy solidification process was determined, reading out the typical solidification parameters. The methods of light and scanning microscopy were used to reveal the structure of composite casting. Changes in chemical composition and phase composition of particles of the FeAl intermetallic phase in aluminium matrix were confirmed. The structure of silumin casting with matrix containing microregions of ceramic and intermetallic phases, typical of hybrid reinforcements, was obtained.

  11. Cold-impregnated aluminium. A new source of nickel exposure.

    Science.gov (United States)

    Lidén, C

    1994-07-01

    A new technique for finishing anodized aluminium was introduced during the 1980s--cold impregnation with nickel. Nickel is available on the surface of cold-impregnated aluminium, as shown by the dimethylglyoxime test. Chemical analysis with EDXA showed that nickel was in the form of NiSO4. A case of work-related allergic contact dermatitis in an engraver with nickel allergy is reported. It transpired that the patient was exposed to nickel in connection with aluminium. It is concluded that cold-impregnated aluminium is a new source of nickel exposure, probably previously unknown to dermatologists. PMID:7924288

  12. Effects of aluminium surface morphology and chemical modification on wettability

    Science.gov (United States)

    Rahimi, M.; Fojan, P.; Gurevich, L.; Afshari, A.

    2014-03-01

    Aluminium alloys are some of the predominant metals in industrial applications such as production of heat exchangers, heat pumps. They have high heat conductivity coupled with a low specific weight. In cold working conditions, there is a risk of frost formation on the surface of aluminium in the presence of water vapour, which can lead to the deterioration of equipment performance. This work addresses the methods of surface modification of aluminium and their effect of the underlying surface morphology and wettability, which are the important parameters for frost formation. Three groups of real-life aluminium surfaces of different morphology: unpolished aluminium, polished aluminium, and aluminium foil, were subjected to surface modification procedures which involved the formation of a layer of hydrophilic hyperbranched polyethyleneglycol via in situ polymerization, molecular vapour deposition of a monolayer of fluorinated silane, and a combination of those. The effect of these surface modification techniques on roughness and wettability of the aluminium surfaces was elucidated by ellipsometry, contact angle measurements and atomic force microscopy. We demonstrated that by employing different types of surface modifications the contact angle of water droplets on aluminium samples can be varied from 12° to more than 120°. A crossover from Cassie-Baxter to Wenzel regime upon changing the surface roughness was also observed.

  13. Friction stir welding (FSW of aluminium foam sandwich panels

    Directory of Open Access Journals (Sweden)

    M. Bušić

    2016-07-01

    Full Text Available The article focuses on the influence of welding speed and tool tilt angle upon the mechanical properties at the friction stir welding of aluminium foam sandwich panels. Double side welding was used for producing butt welds of aluminium sandwich panels applying insertion of extruded aluminium profile. Such insertion provided lower pressure of the tool upon the aluminium panels, providing also sufficient volume of the material required for the weldment formation. Ultimate tensile strength and flexural strength for three-point bending test have been determined for samples taken from the welded joints. Results have confirmed anticipated effects of independent variables.

  14. A Reaction Coating on Aluminium Alloys by Laser Processing

    OpenAIRE

    Zhou, X.B.; De Hosson, J. Th. M.

    1993-01-01

    An aluminium oxide layer of 100 µm in thickness has been successfully coated on aluminium alloy 6061 and pure aluminium using a powder mixture of silicon oxide and aluminium by laser processing. A strong Al/Al2O3 interface was formed. The exothermic chemical reaction between SiO2 and Al may promote the metal/oxide wetting and the formation of Al2O3 layer. This new approach of ceramic coating on metals using a chemical reaction of other ceramics with metals may be applied to other systems.

  15. Role of Gallium and labeled leukocyte scintigraphy in AIDS patient

    International Nuclear Information System (INIS)

    Because AIDS patients frequently present with minimal symptomatology, radionuclide imaging with its ability to survey the entire body, is especially valuable. Gallium-67 citrate, the most commonly performed radionuclide study for localizing infection in these patients, is most useful for detecting opportunistic infections, especially in the thorax. A negative gallium scan, particularly when the chest X-ray is unremarkable, rules strongly against pulmonary disease. A negative gallium scan in a patient with an abnormal chest X-ray and Kaposi's sarcoma, suggests that the patient's respiratory distress is related to the neoplasm. Diffuse pulmonary parenchymal uptake of gallium in the HIV (+) patient is most often associated with PCP. While there are other causes of diffuse pulmonary uptake, the more intense or heterogeneous the uptake, the more likely the patient is to have PCP. Focal pulmonary uptake is usually associated with bacterial pneumonia although PCP may occasionally present in this fashion. Lymph node uptake of gallium is usually associated with Mycob acterium avium complex, tuberculosis, or Iymphoma. When corresponding abnormalities are present on thallium scintigraphy lymphoma is likely. Gallium positive, thallium negative, studies suggest mycobacterial disease. Labeled leukocyte imaging is not useful for detecting opportunistic infections probably because of the inflammatory response incited by these organisms. Leukocyte imaging is, however, more sensitive for detecting bacterial pneumonia. In the abdomen, gallium imaging is most useful for identifying lymphadenopathy, while labeled leukocyte imaging is superior for detecting AlDS-associated colitides. In summary, radionuclide studies are valuable diagnostic modalities in AIDS. Their success can be maximized by tailoring the study to the individual's needs

  16. Application of ultrasound in solvent extraction of nickel and gallium

    Energy Technology Data Exchange (ETDEWEB)

    Pesic, B.

    1996-07-01

    The effects of ultrasound on the rate of solvent extraction of nickel with Lix 65N and Lix 70, and gallium with Kelex 100 were investigated. These solvent extraction systems are noted by their sluggish nature. Low frequency (20 kHz) ultrasound increased the rates of extraction of nickel by factors of four to seven. The ultrasound had no effect on the final chemical equilibrium. Gallium extraction rates were enhanced with the use of ultrasound by as much as a factor of 15. Again, the ultrasound had no effect on extraction equilibrium. For both nickel and gallium, the enhanced rates were attributed to increased interfacial surface area associated with ultrasonically induced cavitation and microdroplet formation. The stability of the microdroplets permitted intermittent application of ultrasound with corresponding decreases in ultrasonic energy requirements. The lowest energy consumption was observed with short (0.25 to 5 s) bursts of high power (41 to 61 W) ultrasonic inputs. The study also provided insight into the factors that affect the complex extraction of gallium from sodium aluminate solutions. The rate controlling step was found to be the dehydration of the gallate ion, Ga(OH)4, and the first complex formation between gallium and Kelex 100. Sodium was found to enhance the extraction rate up to a point, beyond which increased concentration was detrimental. Increasing aluminum concentration was found to slow extraction rates. Modifiers and diluents were shown to markedly affect extraction rates even without ultrasound. Ketone modifiers, particularly 2-undecanone, when used with Kermac 470B or Escaid 200 diluents enhanced extraction rates of gallium to the point that the use of ultrasound provided no additional benefits. The positive effects of ketone modifiers for the solvent extraction of gallium had not been previously reported.

  17. Gallium-67/stable gadolinium antagonism: MRI contrast agent markedly alters the normal biodistribution of gallium-67

    International Nuclear Information System (INIS)

    An 11-yr-old patient was scanned 96 hr after the administration of gallium-67 (67Ga). The scan emulated the biodistribution of a typical bone-seeking radipharmaceutical-rather than that of 67Ga. None of the factors previously identified with alteration of the biodistribution of 67Ga were found. However, the patient had been injected with gadopentetate in conjunction with magnetic resonance imaging 4 hr before receiving the 67Ga. Gadolinium appears to cause a strong carrier-like effect in 67Ga scans

  18. Facile preparation of continuous indium metal-organic framework thin films on indium tin oxide glass

    International Nuclear Information System (INIS)

    Continuous indium metal-organic framework thin films of In12O(OH)12[(OH)4·(H2O)5)][BTC]6 (MIL-96(In)) (BTC = 1,3,5-benzenetricarboxylate) were prepared on indium tin oxide glass by in situ solvothermal growth method. The structure of the films was confirmed by X-ray diffraction. The growth process and the possible growth mechanism of MIL-96(In) films were investigated by a scanning electron microscopy. Furthermore, the influence of the reaction conditions on the morphology and thickness of films was studied. The best crack-free, continuous film with thickness of approximate 6 μm was obtained at the proper concentrations of InCl3 and H3BTC of 25.0 mmol·l−1 at 100 °C for 12 h. - Highlights: • Continuous indium metal-organic framework thin films are prepared. • The growth process and the possible growth mechanism of thin films are investigated. • Indium tin oxide glass promotes the homogeneous nucleation of thin films

  19. Reclamation of gallium, indium and rare-earth elements from photovoltaics, lightning and electronic waste : Reclaim project and outlook

    NARCIS (Netherlands)

    Kleef, M. van; Bisselink, R.; Ansems, T.; Kopacek, B.

    2014-01-01

    Modern technologies for green electronics like photovoltaic systems and solidstate lighting require increasing amounts of scarce metals. Global demand and price of these materials is expected to increase significantly the coming decades. If not controlled well some of these resources may be exhauste

  20. Development of a unique laboratory standard indium gallium arsenide detector for the 500 to 1700 micron spectral region, phase 2

    Science.gov (United States)

    Ban, Vladimir S.; Olsen, Gregory H.

    1990-01-01

    In the course of this work, 5 mm diameter InGaAs pin detectors were produced which met or exceeded all of the goals of the program. The best results achieved were: shunt resistance of over 300 K ohms; rise time of less than 300 ns; contact resistance of less than 20 ohms; quantum efficiency of over 50 percent in the 0.5 to 1.7 micron range; and devices were maintained and operated at 125 C without deterioration for over 100 hours. In order to achieve the goals of this program, several major technological advances were realized, among them: successful design, construction and operation of a hydride VPE reactor capable of growing epitaxial layers on 2 inch diameter InP substrates with a capacity of over 8 wafers per day; wafer processing was upgraded to handle 2 inch wafers; a double layer Si3N4/SiO2 antireflection coating which enhances response over the 0.5 to 1.7 micron range was developed; a method for anisotropic, precisely controlled CH4/H2 plasma etching for enhancement of response at short wavelengths was developed; and electronic and optical testing methods were developed to allow full characterization of detectors with size and spectral response characteristics. On the basis of the work and results achieved in this program, it is concluded that large size, high shunt resistance, high quantum efficiency InGaAs pin detectors are not only feasible but also manufacturable on industrial scale. This device spans a significant portion of visible and near infrared spectral range and it will allow a single detector to be used for the 0.5 to 1.7 micron spectral region, rather than the presently used silicon (for 0.5 to 1.1 microns) and germanium (0.8 to 1.7 microns).

  1. Diagnostic imaging of musculoskeletal infection. Roentgenography; Gallium, indium-labeled white blood cell, gammaglobulin, bone scintigraphy; and MRI

    International Nuclear Information System (INIS)

    A great deal of effort has been made to evaluate and define the role of various diagnostic imaging techniques in various clinical settings that complicate the diagnosis of osteomyelitis. Except possibly in neonates, bone scintigraphy remains generally recommended when there has been no previous osseous involvement. In other cases of chronic disease, previous fracture or trauma, prosthesis, and diabetic foot, In-WBC scintigraphy is generally accepted as an appropriate imaging technique. MRI will play an increasingly important role in diagnosing osteomyelitis and may prove to be an important adjunct in these cases. Research continues to improve our current diagnostic armamentarium. In-IgG appears to avoid practical deficiencies encountered with 67Ga and In-WBC; it remains to be seen what role this agent will play in routine clinical practice. All agents to date image inflammation, not infection, and most require delayed imaging sessions, usually at 24 hours. These shortcomings necessitate further research to develop new radiotracers that can provide useful images within several hours and that are specific for infection, perhaps ultimately delineating the particular microorganism involved.84 references

  2. Analysis of two-phonon infrared spectral features of gallium arsenide and indium phosphide by first-principles calculations

    International Nuclear Information System (INIS)

    We perform a self-consistent calculation based on density functional perturbation theory to analyze the infrared spectral features of GaAs and InP arising from two-phonon processes. The features are identified and assigned the critical points in the first Brillouin zone. Distribution of the critical points is investigated. The analysis demonstrates that collections of phonons of wave vectors around symmetry points and along symmetry lines are responsible for strong infrared features in two-phonon processes. (paper)

  3. Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

    Science.gov (United States)

    Tari, Alireza; Lee, Czang-Ho; Wong, William S.

    2015-07-01

    Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO2, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiNx, and (3) a PECVD SiOx/SiNx dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the Vo concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiNx (high Vo) and SiO2 (low Vo) had the highest and lowest conductivity, respectively. A PECVD SiOx/SiNx dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer into the IGZO and resulted in higher resistivity films.

  4. Dialkylaluminium-, -gallium-, and -indium-based poly-Lewis acids with a 1,8-diethynylanthracene backbone.

    Science.gov (United States)

    Chmiel, Jasmin; Neumann, Beate; Stammler, Hans-Georg; Mitzel, Norbert W

    2010-10-18

    Potential host systems based on a rigid 1,8-diethynylanthracendiyl backbone were synthesised by treatment of 1,8-diethynylanthracene with the Group 13 trialkyls AlMe(3), GaMe(3), InMe(3), AlEt(3) and GaEt(3). The resulting products were characterised by IR and multinuclear NMR spectroscopy, elemental analyses and determination of their crystal structures by X-ray diffraction. The compounds are dimeric in the solid state and comprise two M(2)C(2) heterocycles. Depending on the steric demand of the alkyl substituents at the metal atom, different types of binding modes were observed, which can be classified to lie between the ideals of side-on coordination with almost linear primary M-C≡C units and the 3c-2e coordination with symmetrically bridging alkynyl units in M-C-M bonds. As a solution in THF the dimers are broken into monomers and some are found to undergo ligand scrambling reactions. PMID:20827789

  5. Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere

    International Nuclear Information System (INIS)

    An isotope tracer study, i.e., 18O/16O exchange using 18O2 and H218O, was performed to determine how post-deposition annealing (PDA) affected surface reactivity and oxygen diffusivity of amorphous indium–gallium–zinc oxide (a-IGZO) films. The oxygen tracer diffusivity was very high in the bulk even at low temperatures, e.g., 200 °C, regardless of PDA and exchange conditions. In contrast, the isotope exchange rate, dominated by surface reactivity, was much lower for 18O2 than for H218O. PDA in a humid atmosphere at 400 °C further suppressed the reactivity of O2 at the a-IGZO film surface, which is attributable to –OH-terminated surface formation

  6. Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tari, Alireza, E-mail: atari@uwaterloo.ca; Lee, Czang-Ho; Wong, William S. [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)

    2015-07-13

    Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO{sub 2}, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiN{sub x}, and (3) a PECVD SiO{sub x}/SiN{sub x} dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the V{sub o} concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiN{sub x} (high V{sub o}) and SiO{sub 2} (low V{sub o}) had the highest and lowest conductivity, respectively. A PECVD SiO{sub x}/SiN{sub x} dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer into the IGZO and resulted in higher resistivity films.

  7. Robust and stretchable indium gallium zinc oxide-based electronic textiles formed by cilia-assisted transfer printing

    Science.gov (United States)

    Yoon, Jongwon; Jeong, Yunkyung; Kim, Heeje; Yoo, Seonggwang; Jung, Hoon Sun; Kim, Yonghun; Hwang, Youngkyu; Hyun, Yujun; Hong, Woong-Ki; Lee, Byoung Hun; Choa, Sung-Hoon; Ko, Heung Cho

    2016-06-01

    Electronic textile (e-textile) allows for high-end wearable electronic devices that provide easy access for carrying, handling and using. However, the related technology does not seem to be mature because the woven fabric hampers not only the device fabrication process directly on the complex surface but also the transfer printing of ultrathin planar electronic devices. Here we report an indirect method that enables conformal wrapping of surface with arbitrary yet complex shapes. Artificial cilia are introduced in the periphery of electronic devices as adhesive elements. The cilia also play an important role in confining a small amount of glue and damping mechanical stress to maintain robust electronic performance under mechanical deformation. The example of electronic applications depicts the feasibility of cilia for `stick-&-play' systems, which provide electronic functions by transfer printing on unconventional complex surfaces.

  8. Thermal Characteristics of Amorphous Indium-Gallium-Zinc-Oxide and Graphite in Display Panel Based Thin Film Transistors.

    Science.gov (United States)

    Kim, Hak-Jun; Kim, Youn-Jea

    2015-11-01

    One of the important design factors in the smart electronic industry is proper heat treatment of the display panel. In order to improve the heat transfer performance of display panels, we analyzed a three-dimensional model of multi-stack layers of the thin film transistors (TFTs). In particular, we numerically investigated the thermal barrier effects of active layers having different material properties of a-IGZO (isotropy) and graphite (anisotropy). We calculated the temperature distribution on the display panel with each active layer, using the commercial code, COMSOL Multiphysics. We graphically depict comparative results of the thermal characteristics between a-IGZO and graphite with the stacked structure of the TFTs. PMID:26726627

  9. Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium

    Energy Technology Data Exchange (ETDEWEB)

    Pavlov, D. A. [Nizhni Novgorod Lobachevsky State University (Russian Federation); Bidus, N. V. [Nizhny Novgorod State University, Physicotechnical Research Institute (Russian Federation); Bobrov, A. I., E-mail: bobrov@phys.unn.ru [Nizhni Novgorod Lobachevsky State University (Russian Federation); Vikhrova, O. V. [Nizhny Novgorod State University, Physicotechnical Research Institute (Russian Federation); Volkova, E. I. [Nizhni Novgorod Lobachevsky State University (Russian Federation); Zvonkov, B. N. [Nizhny Novgorod State University, Physicotechnical Research Institute (Russian Federation); Malekhonova, N. V.; Sorokin, D. S. [Nizhni Novgorod Lobachevsky State University (Russian Federation)

    2015-01-15

    The distribution of elastic strains in a system consisting of a quantum-dot layer and a buried GaAs{sub x}P{sub 1−x} layer is studied using geometric phase analysis. A hypothesis is offered concerning the possibility of controlling the process of the formation of InAs quantum dots in a GaAs matrix using a local isovalent phosphorus impurity.

  10. A study on the recycling of aluminium alloy 7075 scrap

    Energy Technology Data Exchange (ETDEWEB)

    Oezer, Goekhan [Yildiz Technical Univ., Yildiz (TR). Balkan Centre of Advanced Casting Technologies (BACAT); Marsoglu, Muezeyyen [Yildiz Technical Univ., Yildiz (Turkey). Dept. for Metal and Materials Science Engineering; Burgucu, Sarp

    2012-07-01

    Aluminium and its alloys have recently become an important metal whose area and amount of usage increase more and more, due to their mechanical properties, recycling ability, and penetrability. If it is considered that the bauxite, which is the raw material of aluminium is rare on earth, and also the area and amount of aluminium usage increases over time, the importance of aluminium recycling goes up. aluminium recycling has become crucial by means of both, the potential of the scrap's dependant increase on usage and the primary aluminium production, as it is providing energy and cost savings. 7xxx grades of scrap are collected with other scrap of aluminium alloys in one turn and recycled all together. As the regain of these alloys is not done by isolation of the various grades, the finally recycled ingots result in lower grades. High value aluminium scrap is regrettably not recovered, as it was anticipated. This study is dealing with 7075 aluminium alloys originated from discharged blow molding tools and the rest piece cuttings of blocks and plates. The material has been subjected to an induction furnace, and has been remelted into small ingots and hardened according to 7075 aluminium alloy parameters (hardening aluminium tooling). [German] Aluminium und seine Legierungen sind in den letzten Jahren aufgrund ihrer mechanischen Eigenschaften, ihrer Recyclingfaehigkeit und ihrer Durchlaessigkeit immer bedeutendere metallische Werkstoffe geworden. Unter Beruecksichtigung, dass Bauxit als Rohmaterial selten auf der Erde vorkommt und der Verbrauch mit der Zeit steigt, waechst die Bedeutung des Recyclings von Aluminium. Aluminiumrecycling, zumal es Energieund Kosteneinsparungen ermoeglicht, ist sowohl fuer die schrottabhaengigen Verwendungspotentiale und die PrimaerAluminiumproduktion gleichermassen bedeutend geworden. Die 7xxxx Schrottlegierungen werden in einem Arbeitsgang mit dem Schrott aus anderen Aluminiumlegierungen gesammelt und recycled. Da die

  11. Sputtering of indium under polyatomic ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Samartsev, A.V.

    2004-10-01

    The main goal of the present study is the investigation of the sputtering of neutral particles from a metal surface under atomic and polyatomic ion bombardment using secondary neutral time-of-flight mass spectrometry (ToF SNMS). For postionization of neutral species, UV laser irradiation with wavelength 193 nm was utilized. For generation of polyatomic projectiles, a negatives sputter cesium ion source suitable for To F SNMS setup was developed and built. The ion source delivers negatively charged Au{sub m}{sup -} (m=1/5) and AuCs{sub 2} polyatomic ions produced from a gold sputter target bombarded by positive Cs{sup +} ions. Mass separation of primary projectiles in the ion source is performed by a built-in compact Wien filter allowing to separate heavy ions in the energy range of several keV. In the experiment, an indium surface was bombarded by Au{sub m}{sup -} (m=1/5) projectiles with total impact energy of 5 and 10 keV. The obtained mass distributions of sputtered indium species reveal that the partial yields of sputtered clusters increase under polyatomic ion bombardment. It is shown that the enhancement in total sputtering yield per constituent atom of the projectile ion is non-additively enhanced in the case of diatomic ion bombardment in comparison with monoatomic projectile ions impinging at the same velocity. The enhancement of partial yields observed for sputtered clusters is found to increase with increasing cluster size, reaching a factor fo several ten for the largest detected cluster. Apart from sputtering yields, kinetic energy distributions (KED) of sputtered neutral indium atoms ejected under mono- and polyatomic projectile ion bombardment were measured. (orig.)

  12. There is (still too much aluminium in infant formulas

    Directory of Open Access Journals (Sweden)

    Burrell Shelle-Ann M

    2010-08-01

    Full Text Available Abstract Background Infant formulas are sophisticated milk-based feeds for infants which are used as a substitute for breast milk. Historically they are known to be contaminated by aluminium and in the past this has raised health concerns for exposed infants. We have measured the aluminium content of a number of widely used infant formulas to determine if their contamination by aluminium and consequent issues of child health persists. Methods Samples of ready-made milks and powders used to make milks were prepared by microwave digestion of acid/peroxide mixtures and their aluminium content determined by THGA. Results The concentration of aluminium in ready-made milks varied from ca 176 to 700 μg/L. The latter concentration was for a milk for preterm infants. The aluminium content of powders used to make milks varied from ca 2.4 to 4.3 μg/g. The latter content was for a soya-based formula and equated to a ready-to-drink milk concentration of 629 μg/L. Using the manufacturer's own guidelines of formula consumption the average daily ingestion of aluminium from infant formulas for a child of 6 months varied from ca 200 to 600 μg of aluminium. Generally ingestion was higher from powdered as compared to ready-made formulas. Conclusions The aluminium content of a range of well known brands of infant formulas remains high and particularly so for a product designed for preterm infants and a soya-based product designed for infants with cow's milk intolerances and allergies. Recent research demonstrating the vulnerability of infants to early exposure to aluminium serves to highlight an urgent need to reduce the aluminium content of infant formulas to as low a level as is practically possible.

  13. Effects of aluminium surface morphology and chemical modification on wettability

    Energy Technology Data Exchange (ETDEWEB)

    Rahimi, M., E-mail: mar@sbi.aau.dk [Department of Energy and Environment, Danish Building Research Institute, Aalborg University, A.C. Meyers Vænge 15, 2450 København SV (Denmark); Fojan, P.; Gurevich, L. [Department of Physics and Nanotechnology, Aalborg University, Skjernvej 4, DK-9220 Aalborg East (Denmark); Afshari, A. [Department of Energy and Environment, Danish Building Research Institute, Aalborg University, A.C. Meyers Vænge 15, 2450 København SV (Denmark)

    2014-03-01

    Highlights: • Successful surface modification procedures on aluminium samples were performed involving formation of the layer of hydrophilic hyperbranched polyethyleneglycol (PEG) via in situ polymerization, molecular vapour deposition of a monolayer of fluorinated silane, and a combination of those. • The groups of surfaces with hydrophobic behavior were found to follow the Wenzel model. • A transition from Cassie–Baxter's to Wenzel's regime was observed due to changing of the surface roughness upon mechanical polishing in aluminium samples. - Abstract: Aluminium alloys are some of the predominant metals in industrial applications such as production of heat exchangers, heat pumps. They have high heat conductivity coupled with a low specific weight. In cold working conditions, there is a risk of frost formation on the surface of aluminium in the presence of water vapour, which can lead to the deterioration of equipment performance. This work addresses the methods of surface modification of aluminium and their effect of the underlying surface morphology and wettability, which are the important parameters for frost formation. Three groups of real-life aluminium surfaces of different morphology: unpolished aluminium, polished aluminium, and aluminium foil, were subjected to surface modification procedures which involved the formation of a layer of hydrophilic hyperbranched polyethyleneglycol via in situ polymerization, molecular vapour deposition of a monolayer of fluorinated silane, and a combination of those. The effect of these surface modification techniques on roughness and wettability of the aluminium surfaces was elucidated by ellipsometry, contact angle measurements and atomic force microscopy. We demonstrated that by employing different types of surface modifications the contact angle of water droplets on aluminium samples can be varied from 12° to more than 120°. A crossover from Cassie–Baxter to Wenzel regime upon changing the surface

  14. Positive indium-111 leukocyte scintigraphy in a skeletal metastasis

    Energy Technology Data Exchange (ETDEWEB)

    Sfakianakis, G.N.; Mnaymneh, W.; Ghandur-Mnaymneh, L.; Al-Sheikh, W.; Hourani, M.; Heal, A.

    1982-09-01

    Indium-111 scintigraphy is a method proposed for specific diagnosis and localization of focal infection. It has been found that, in general, cancers did not visualize with leukocyte scintigraphy. In this article, a case of positive indium-111 leukocyte scintigrams of a foot metstasis from a mucoepidermoid carcinoma of the lung is reported. (JMT)

  15. Gallium-based avalanche photodiode optical crosstalk

    Science.gov (United States)

    Blazej, Josef; Prochazka, Ivan; Hamal, Karel; Sopko, Bruno; Chren, Dominik

    2006-11-01

    Solid-state single photon detectors based on avalanche photodiode are getting more attention in various areas of applied physics: optical sensors, quantum key distribution, optical ranging and Lidar, time-resolved spectroscopy, X-ray laser diagnostics, and turbid media imaging. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP, and InGaP/InGaAs at the Czech Technical University in Prague during the last 20 years. They have been tailored for numerous applications. Trends in demand are focused on detection array construction recently. Even extremely small arrays containing a few cells are of great importance for users. Electrical crosstalk between individual gating and quenching circuits and optical crosstalk between individual detecting cells are serious limitation for array design and performance. Optical crosstalk is caused by the parasitic light emission of the avalanche which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon- and gallium-based photodiodes. The timing properties and spectral distribution of the emitted light have been measured for different operating conditions to quantify optical crosstalk. We conclude that optical crosstalk is an inherent property of avalanche photodiode operated in Geiger mode. The only way to minimize optical crosstalk in avalanche photodiode array is to build active quenching circuit with minimum response time.

  16. Maskless proton beam writing in gallium arsenide

    International Nuclear Information System (INIS)

    Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed

  17. Maskless proton beam writing in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom) and Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom)]. E-mail: p.mistry@surrey.ac.uk; Gomez-Morilla, I. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Smith, R.C. [Nano-Electronics Centre, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Thomson, D. [Advanced Technology Institute, University of Surrey, Guildford GU2 7XH (United Kingdom); Grime, G.W. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Webb, R.P. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Gwilliam, R. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Jeynes, C. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Cansell, A. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Merchant, M. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom); Kirkby, K.J. [Ion Beam Centre, University of Surrey, Guildford GU2 7XH (United Kingdom)

    2007-07-15

    Proton beam writing (PBW) is a direct write technique that employs a focused MeV proton beam which is scanned in a pre-determined pattern over a target material which is subsequently electrochemically etched or chemically developed. By changing the energy of the protons the range of the protons can be changed. The ultimate depth of the structure is determined by the range of the protons in the material and this allows structures to be formed to different depths. PBW has been successfully employed on etchable glasses, polymers and semiconductor materials such as silicon (Si) and gallium arsenide (GaAs). This study reports on PBW in p-type GaAs and compares experimental results with computer simulations using the Atlas (copy right) semiconductor device package from SILVACO. It has already been proven that hole transport is required for the electrochemical etching of GaAs using Tiron (4,5-dihydroxy-m-benzenedisulfonic acid, di-sodium salt). PBW in GaAs results in carrier removal in the irradiated regions and consequently minimal hole transport (in these regions) during electrochemical etching. As a result the irradiated regions are significantly more etch resistant than the non-irradiated regions. This allows high aspect ratio structures to be formed.

  18. Investigation on gallium ions impacting monolayer graphene

    International Nuclear Information System (INIS)

    In this paper, the physical phenomena of gallium (Ga+) ion impacting monolayer graphene in the nanosculpting process are investigated experimentally, and the mechanisms are explained by using Monte Carlo (MC) and molecular dynamics (MD) simulations. Firstly, the MC method is employed to clarify the phenomena happened to the monolayer graphene target under Ga+ ion irradiation. It is found that substrate has strong influence on the damage mode of graphene. The mean sputtering yield of graphene under 30 keV Ga+ ion irradiation is 1.77 and the least ion dose to completely remove carbon atoms in graphene is 21.6 ion/nm2. Afterwards, the focused ion beam over 21.6 ion/nm2 is used for the irradiation on a monolayer graphene supported by SiO2 experimentally, resulting in the nanostructures, i.e., nanodot and nanowire array on the graphene. The performances of the nanostructures are characterized by atomic force microscopy and Raman spectrum. A plasma plume shielding model is put forward to explain the nanosculpting results of graphene under different irradiation parameters. In addition, two damage mechanisms are found existing in the fabrication process of the nanostructures by using empirical MD simulations. The results can help us open the possibilities for better control of nanocarbon devices

  19. Sputtering of indium using polyatomic projectiles

    Energy Technology Data Exchange (ETDEWEB)

    Samartsev, A.V.; Wucher, A

    2004-06-15

    We have investigated the emission of neutral and charged particles from a polycrystalline indium surface under bombardment with Au, Au{sub 2}, Au{sub 3}, Au{sub 5} and AuCs{sub 2} projectiles with energies between 5 and 10 keV. Sputtered neutral species were postionized by means of saturated single photon ionization, thus characterizing the respective partial sputtering yields. The ionization probability of the emitted species was addressed by measuring the respective secondary ion signals under the same experimental conditions. It is seen that the relative cluster yields are enhanced under polyatomic projectile bombardment, while the ionization probability of In atoms seems to be largely unaffected.

  20. Synthesis of indium and indium oxide nanoparticles from indium cyclopentadienyl precursor and their application for gas sensing

    International Nuclear Information System (INIS)

    Decomposition of the organometallic precursor [In(η5-C5H5)] in toluene in the presence of methanol (8 vol.-%) at room temperature leads to the immediate formation of aggregates of indium nanoparticles of 15±2 nm mean diameter. The aggregates are roughly spherical with a mean size of 400±40 nm. The particles were characterized by means of transmission electron and high-resolution transmission electron microscopies (TEM and HRTEM), and X-ray diffraction (XRD) studies indicate that the powder consists of the tetragonal phase of indium. The thermal oxidation in air of these nanoparticles yields well-crystallized nanoparticles of In2O3 with unchanged morphology (aggregates of nanoparticles of 16.6±2 nm mean diameter with aggregate mean size of 400±40 nm) and without any sign of coalescence. XRD pattern shows that the powder consists of the cubic phase of In2O3. The electrical conductivity measurements demonstrate that this material is highly sensitive to an oxidizing gas such as nitrogen dioxide and barely sensitive to a reducing gas such as carbon monoxide. Its association with SnO2-based sensors allows the selective detection of carbon monoxide (30 ppm) and sub-ppm amounts of nitrogen dioxide (400 ppb) in a mixture at 21 C and at a relative humidity of 60 %. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

  1. Fabrication, structure and mechanical properties of indium nanopillars

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Gyuhyon; Kim, Ju-Young; Budiman, Arief Suriadi; Tamura, Nobumichi; Kunz, Martin; Chen, Kai; Burek, Michael J.; Greer, Julia R.; Tsui, Ting Y.

    2010-01-01

    Solid and hollow cylindrical indium pillars with nanoscale diameters were prepared using electron beam lithography followed by the electroplating fabrication method. The microstructure of the solid-core indium pillars was characterized by scanning micro-X-ray diffraction, which shows that the indium pillars were annealed at room temperature with very few dislocations remaining in the samples. The mechanical properties of the solid pillars were characterized using a uniaxial microcompression technique, which demonstrated that the engineering yield stress is {approx}9 times greater than bulk and is {approx}1/28 of the indium shear modulus, suggesting that the attained stresses are close to theoretical strength. Microcompression of hollow indium nanopillars showed evidence of brittle fracture. This may suggest that the failure mode for one of the most ductile metals can become brittle when the feature size is sufficiently small.

  2. Gas heat treatment plants for the aluminium industry; Gasbeheizte Waermebehandlungsanlagen fuer die Aluminium-Industrie

    Energy Technology Data Exchange (ETDEWEB)

    Olberts, P.; Hanus, A. [LOI Thermprocess GmbH, Essen (Germany)

    2004-09-01

    LOI Thermoprocess has developed new, flexible, innovative furnace designs for heat treatment of aluminium in general (car industry) and particularly for cylinder heads, engine units, chassis components, textured components, wheels, rolled sheet and extrusions. The furnaces are heated by means of radiant tubes (recuperators) and by the more usual open gas heating system (flue gas recirculation). (orig.)

  3. The aluminium body has been promoted in Canada; La carrosserie aluminium promue au Canada

    Energy Technology Data Exchange (ETDEWEB)

    Anon.

    2004-02-01

    The aluminium vehicles technology is a technology which allows, with an equivalent structure, to decrease the weight of a car of 40%. Presented by the Alcan firm, this technology is one of the technologies of the year 2003. The Alcan firm has, besides, received the 2003 technology price awarded by the magazine Industry Week. (O.M.)

  4. Enhanced corrosion protection by microstructural control of aluminium brazing sheet

    NARCIS (Netherlands)

    Norouzi Afshar, F.

    2013-01-01

    Aluminium brazing sheet is a sandwich material made out of two aluminium alloys (AA4xxx/AA3xxx) and is widely used in automotive heat exchangers. One of the main performance criteria for heat exchanger units is the lifetime of the product. The lifetime of the heat exchanger units is determined by th

  5. Thermoelectric power of multilayer compositions of aluminium and carbon nanotubes

    International Nuclear Information System (INIS)

    Changing the thermoelectric power monolayer and multilayer aluminium foil and multilayer foils compositions of aluminium and carbon nanotubes is the deformation ε < 60% due to the scattering of conduction electrons at dislocations and ε=(70 ...96)% - due to their scattering on the boundaries between the layers (thermoelectric size effect)

  6. Phase analysis of nickel surface layer implanted by aluminium

    International Nuclear Information System (INIS)

    The experimental result of study of microstructure and phase composition in the surface zone of nickel target under intensive implantation of aluminium ions on a vacuum-arc and plasma flow source Raduga-5 are presented. It was established that the fine dispersed intermetallic precipitates Ni3Al and NiAl and the variable composition solid solution of aluminium in nickel are formed

  7. CAD implementation of design rules for aluminium extrusion dies

    NARCIS (Netherlands)

    Ouwerkerk, van Gijs

    2009-01-01

    Aluminium extrusion is an industrial forming process that is used to produce long profiles of a constant cross-section. This cross-section is shaped by the opening in a steel tool known as the die. The understanding of the mechanics of the aluminium extrusion process is still limited. The flow of al

  8. Spark counting technique with an aluminium oxide film

    International Nuclear Information System (INIS)

    Automatic spark counting of etch-pits on a polycarbonate film produced by nuclear fission fragments is now used for neutron monitoring in several countries. A method was developed using an aluminium oxide film instead of a polycarbonate as the neutron detector. Aluminium oxide films were prepared as follows: A cleaned aluminium plate as an anode and a nickel plate as a cathode were immersed in dilute sulfuric acid solution and electric current flowed between the electrodes at 12degC for 10-30 minutes. Electric current density was about 10 mA/cm2. The aluminium plate was then kept in boiling water for 10-30 minutes for sealing. The thickness of the aluminium oxide layer formed was about 1μm. The aluminium plate attached to a plate of suitable fissionable material, such as uranium or thorium, was irradiated with neutrons and set in a usual spark counter for fission track counting. One electrode was the aluminium plate and the other was an aluminized polyester sheet. Sparked pulses were counted with a usual scaler. The advantage of using spark counting with an aluminium oxide film for neutron monitoring is rapid measurement of neutron exposure, since chemical etching which is indispensable for spark counting with a polycarbonate detector film, is not needed. (H.K.)

  9. The peculiarities of scandium and yttrium dissolution in aluminium melt

    International Nuclear Information System (INIS)

    The investigation results of dissolution of scandium and yttrium in liquid aluminium at 973-1173 K are presented in this work. It was shown that coefficient value of yttrium diffusion in aluminium melt equals to 3,566-17,9070 m2/sec, and scandium 9,692-4,072 m2/sec.

  10. Haemodialysis related osteomalacia: a staining method to demonstrate aluminium

    OpenAIRE

    Buchanan, Malcolm RC; Ihle, Benno U; Dunn, Cheryl M

    1981-01-01

    A slight modification in tissue processing and staining technique enables a previously described method for staining aluminium to be used to demonstrate aluminium in osteomalacia associated with haemodialysis. The stain appears to be accurate in diagnosing this condition and may assist in establishing the diagnosis before severe osteomalacia develops.

  11. The Russian-American Gallium solar neutrino Experiment (SAGE)

    International Nuclear Information System (INIS)

    The Russian-American Gallium Experiment (SAGE) began measurements of the integral flux of solar neutrinos using 30 tons of metallic gallium as the target in January 1990. The mass of the gallium was increased to 57 tons in September 1991 and SAGE began to count the decay of 71Ge using both the K and L peaks in September 1992. The results indicate a deficit of about 40% of the flux predicted by the Standard Solar Model. The chemical extraction and counting techniques used by SAGE are presented, with particular attention on backgrounds. The present status, results, and future plans of SAGE are presented, along with a discussion of the possible physics implications

  12. The role of gallium scintigraphy in the age of PET

    International Nuclear Information System (INIS)

    67Ga-citrate was introduced to the clinical practice in 1969. Despite of the development in new radiopharmaceuficals, gallium holds a good position for the availability to image viable tumour cells and inflammations lesions. Nowadays gallium scintigraphy is a classical method of nuclear medicine. It provides important diagnostic and prognostic data especially in patients with malignant lymphomas and malignant melanomas. In inflammatory diseases gallium scintigraphy, besides imaging, can assess the activity of inflammation. Methods: In the Department of Nuclear Medicine in Hradec Kralove gallium scintigraphy has been used since 1973o Till December 2003, in 5532 patients scintigraphic imaging with gallium have been carried out here. No side effects and interactions were ever observed. Our standard protocol presents i.v. injection of 160-250 MBq 67Ga-citrate (in adults), whole body scan or spot images at 48-72 hours and delayed images of suspicious areas. Laxatives or enemas were employed prior scan of abdomen. In the last 10 years dual heads SPECT gamma cameras equipped with 300 keV collimators were used. SPECT increased the sensitivity and specificity of examination. Results: The most frequent indications in the last 5 years (2327 patients): a/malignant melanoma- metastases, success of treatment, recurrences (41%) b/lymphomas- staging, recurrences, monitoring of treatment's success, residual lymphadenopathy after treatment (34%) c/others tumours - dif. dg., metastases (6%) d/sarcoidosis - determination of activity, staging (7%) e/lung fibrosis and alveolitis - determination of activity (4%) f/inflammations of bones and joints (2%) g/undetermined conditions with clinical and laboratory signs of malignity or inflammation, non-elucidated by other imaging Methods (6%) The sensitivity of gallium scintigraphy is high in indications a/-f/, in g/is lower but for frequently unexpected findings the method is in favour with clinical physicians. Conclusions: During the last

  13. Liquid gallium jet-plasma interaction studies in ISTTOK tokamak

    International Nuclear Information System (INIS)

    Liquid metals have been pointed out as a suitable solution to solve problems related to the use of solid walls submitted to high power loads allowing, simultaneously, an efficient heat exhaustion process from fusion devices. The most promising candidate materials are lithium and gallium. However, lithium has a short liquid state temperature range when compared with gallium. To explore further this property, ISTTOK tokamak is being used to test the interaction of a free flying liquid gallium jet with the plasma. ISTTOK has been successfully operated with this jet without noticeable discharge degradation and no severe effect on the main plasma parameters or a significant plasma contamination by liquid metal. Additionally the response of an infrared sensor, intended to measure the jet surface temperature increase during its interaction with the plasma, has been studied. The jet power extraction capability is extrapolated from the heat flux profiles measured in ISTTOK plasmas.

  14. Interaction of sodium with tellurium in gallium melts

    Energy Technology Data Exchange (ETDEWEB)

    Dergacheva, M.B.; Sarsekeeva, R.Zh.; Kozin, L.F.

    1988-09-20

    The purpose of this work was to study interaction of sodium with admixtures of tellurium and to determine the composition and phase state of the intermetallic compounds formed. The investigations were carried out by a potentiometric method with measurement of emf of the concentration cells. Sodium was introduced into the original gallium-tellurium binary alloy by electrolysis. The results of measurements of the emf of the cell were used for plotting potentiometric curves. The emf values found on the horizontal region of the potentiometric were subjected to mathematical analysis for determination of deviations from the regression line of the results of three parallel series of measurement. The emf of concentration cells with a solid electrolyte, based on melts of the gallium-sodium-tellurium ternary system, deviate from the theoretical values at 855 K; this is attributed to formation of the intermetallic compound, sparingly soluble in gallium, the free energy of formation of which is -266 +/- 15 kJ/mole.

  15. Spectrofluorimetric determination of gallium with calon-carboxylic acid

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    A simple and sensitive spectrofluorimetric procedure for the analysis of microquantities of gallium in alloy wasdescribed. The method is based on the formation of Ga(Ⅲ)-CCA (calon-carboxylic acid) complex. The emission of thefluorescent complex was measured at λ = 620 nm with excitation at λ = 584 nm. A good linearity was found in the galliumrange of 0.7-280 ng/mL. The precision of the method is good and the relative standard deviation is 1.9% for a gallium stan-dard solution of 70 ng/mL. The procedure was proved to be suitable in terms of accuracy and selectivity for the mi-croamount of gallium in alloy.

  16. Corrosion behavior of structural materials in liquid gallium environments

    International Nuclear Information System (INIS)

    The purpose of this work is to investigate the interaction between austenitic stainless steel such as SS-316L and liquid metals including pure Ga, Ga-14Sn-6Zn and Ga-8Sn-6Zn for the potential application of gallium for fast reactor coolants. As received and pre-oxidized specimens of SS-316L were exposed to static gallium and gallium alloys (Ga-14Sn-6Zn and Ga-8Sn-6Zn) at 500 C. degrees for up to 700 hours in air, vacuum and controlled O2 conditions. The results have shown that pre-oxidized specimens showed higher corrosion resistance than as-received specimens in terms of metal loss. The weight change and metal loss of SS-316L were generally reduced in Ga-14Sn-6Zn and Ga-8Sn-6Zn comparing to those in pure Ga. (authors)

  17. Rapid separation of gallium from zinc targets by thermal diffusion

    International Nuclear Information System (INIS)

    We present a simple, non-destructive and rapid method to separate radioactive gallium isotopes from a zinc target. Irradiated target foils were heated up to 400oC, that is close to the melting point of zinc. At this temperature the gallium isotopes became movable in the zinc matrix and were concentrated on the surface of the target. By dipping the foils into a weak acid, more than 60% of the radioactivity was etched off the target (thickness 100 μm) and with less than 0.5% loss of the target material. The total separation time was less than 30 min. The method can be applied with enriched zinc targets and low energy proton reactions and may, e.g. produce high amounts of positron emitting gallium isotopes (66Ga and 68Ga) by the use of accelerators available at PET-centers. (author)

  18. Aluminium Alloy Cast Shell Development for Torpedoes

    Directory of Open Access Journals (Sweden)

    Vijaya Singh

    2005-01-01

    Full Text Available The sand-cast aluminium alloy cylindrical shells were developed for the advanced experimental torpedo applications. The components had intricate geometry, thin-walled sections, and stringent property requirements. The casting defects, such as shrinkage, porosity, incomplete filling of thin sections, cold shuts, inclusions and dimensional eccentricity, etc were found inthe initial castings trials. improvements in casting quality were achieved through modified methodology, selective chilling, risering, and by introducing ceramic-foam filters in the gatingsystem. The heat-treated and machined components met radiographic class I grade C/E standards, mechanical properties to BS1490 specifications, and leakage and hydraulic pressure testrequirements relevant for such applications.

  19. Dissolved aluminium in the Southern Ocean

    OpenAIRE

    Middag, R.; Slooten van, C.; Baar, H.J.W. de; Laan, P.

    2011-01-01

    Dissolved aluminium (Al) occurs in a wide range of concentrations in the world oceans. The concentrations of Al in the Southern Ocean are among the lowest ever observed. An all-titanium CTD sampling system makes it possible to study complete deep ocean sections of Al and other trace elements with the same high vertical resolution of 24 depths as normal for traditional CTD/Rosette sampling. Overall, 470 new data points of Al are reported for 22 full depth stations and 24 surface sampling posit...

  20. Roll casting of 5182 aluminium alloy

    OpenAIRE

    Haga, T; M. Mtsuo; D. Kunigo; Hatanaka, Y; R. Nakamuta; H. Watari; S. Kumai

    2009-01-01

    Purpose: of this paper is investigation of the ability of the high speed roll casting of 5182 aluminium alloy. Appropriate twin roll caster to cast the 5182 strip was researched.Design/methodology/approach: Method used in the present study was an unequal diameter twin roll caster and a vertical type high speed twin roll caster equipped with mild steel rolls without parting material.Findings: are that the vertical type high speed twin roll caster was effective to cast 5182 strip at high speed....