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Sample records for alloy-ge

  1. Phase Transitions of Thermoelectric TAGS-85

    NARCIS (Netherlands)

    Kooi, Bart J.; Rao, Jiancun; van Eijck, L.; Schwarzmüller, Stefan; Oeckler, Oliver; Blake, Graeme R.

    2017-01-01

    The alloys (GeTe)x(AgSbTe2)100-x, commonly known as TAGS-x, are among the best performing p-type thermoelectric materials for the composition range 80 ≤ x ≤ 90 and in the temperature range 200-500 °C. They adopt a rhombohedrally distorted rocksalt structure at

  2. Phase Transitions of Thermoelectric TAGS-85

    NARCIS (Netherlands)

    Kumar, Anil; Vermeulen, Paul A.; Kooi, Bart J.; Rao, Jiancun; van Eijck, Lambert; Schwarzmueller, Stefan; Oeckler, Oliver; Blake, Graeme R.

    2017-01-01

    The alloys (GeTe)x(AgSbTe2)100–x, commonly known as TAGS-x, are among the best performing p-type thermoelectric materials for the composition range 80 ≤ x ≤ 90 and in the temperature range 200–500 °C. They adopt a rhombohedrally distorted rocksalt structure at room temperature and are reported to

  3. Phase Transitions of Thermoelectric TAGS-85

    OpenAIRE

    Kumar, Anil; Vermeulen, Paul A.; Kooi, Bart J.; Rao, Jiancun; van Eijck, Lambert; Schwarzmueller, Stefan; Oeckler, Oliver; Blake, Graeme R.

    2017-01-01

    The alloys (GeTe)x(AgSbTe2)100–x, commonly known as TAGS-x, are among the best performing p-type thermoelectric materials for the composition range 80 ≤ x ≤ 90 and in the temperature range 200–500 °C. They adopt a rhombohedrally distorted rocksalt structure at room temperature and are reported to undergo a reversible phase transition to a cubic structure at ∼250 °C. However, we show that, for the optimal x = 85 composition (TAGS-85), both the structural and thermoelectric properties are highl...

  4. On the nature of chemical bonding in phase change materials on the base of (GeTe)m-(Sb2Te3)n alloys

    Science.gov (United States)

    Orlov, V. G.; Sergeev, G. S.

    2017-05-01

    Despite widespread use of pseudobinary alloys (GeTe)m-(Sb2Te3)n for manufacture of optical data storage memory interpretation of very fast crystallization and amorphization processes in these phase change materials (PCM) is still under discussion. To clarify the role of electron subsystem in unusual properties of PCM and to reveal the nature of their chemical bonding electron band structure calculations using WIEN2k program code were performed for compounds GeTe, Sb2Te3, GeSb2Te4 and Ge2Sb2Te5. Parameters of bond critic points in the electron density distribution for studied compounds and some related substances were obtained and analyzed. Characteristics of bond critic points inherent to basic PCM are established. They can be used as guide parameters for searching new perspective materials.

  5. Atom probe tomography study on Ge{sub 1−x−y}Sn{sub x}C{sub y} hetero-epitaxial film on Ge substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kamiyama, Eiji, E-mail: ejkamiyama@aol.com [Technology, GlobalWafers Japan Corp. Ltd., 6-861-5 Higashiko, Seiro, Niigata 957-0197 (Japan); Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja-shi, Okayama-ken 719-1197 (Japan); Sueoka, Koji [Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja-shi, Okayama-ken 719-1197 (Japan); Terasawa, Kengo; Yamaha, Takashi; Nakatsuka, Osamu [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Izunome, Koji; Kashima, Kazuhiko [Technology, GlobalWafers Japan Corp. Ltd., 6-861-5 Higashiko, Seiro, Niigata 957-0197 (Japan); Uchida, Hiroshi [Physical Analysis Technology Center, Toshiba Nanoanalysis Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522 (Japan)

    2015-10-01

    We analyzed the incorporation of C atoms into a ternary alloy Ge{sub 1−x−y}Sn{sub x}C{sub y} epitaxial film on Ge substrates on a sub-nanometer scale by using atom probe tomography. Periodic atom distributions from individual (111) atomic planes were observed both in the Ge{sub 1−x−y}Sn{sub x}C{sub y} film and at the Ge substrates. Sn/C atoms had non-uniform distributions in the film. They also demonstrated a clear positive correlation in their distributions. Substitutional C atoms were only incorporated into the film when an Sn atom beam was applied onto the substrates under film growth conditions. - Highlights: • Incorporation of C atoms into epitaxial Ge{sub 1−x−y}Sn{sub x}C{sub y} film was studied. • Individual (111) atomic planes were observed by atom probe tomography. • Sn/C atoms had non-uniform distributions in the film. • Clear positive correlation in Sn/C atoms distributions was obtained.

  6. An optoelectronic framework enabled by low-dimensional phase-change films

    Science.gov (United States)

    Hosseini, Peiman; Wright, C. David; Bhaskaran, Harish

    2014-07-01

    The development of materials whose refractive index can be optically transformed as desired, such as chalcogenide-based phase-change materials, has revolutionized the media and data storage industries by providing inexpensive, high-speed, portable and reliable platforms able to store vast quantities of data. Phase-change materials switch between two solid states--amorphous and crystalline--in response to a stimulus, such as heat, with an associated change in the physical properties of the material, including optical absorption, electrical conductance and Young's modulus. The initial applications of these materials (particularly the germanium antimony tellurium alloy Ge2Sb2Te5) exploited the reversible change in their optical properties in rewritable optical data storage technologies. More recently, the change in their electrical conductivity has also been extensively studied in the development of non-volatile phase-change memories. Here we show that by combining the optical and electronic property modulation of such materials, display and data visualization applications that go beyond data storage can be created. Using extremely thin phase-change materials and transparent conductors, we demonstrate electrically induced stable colour changes in both reflective and semi-transparent modes. Further, we show how a pixelated approach can be used in displays on both rigid and flexible films. This optoelectronic framework using low-dimensional phase-change materials has many likely applications, such as ultrafast, entirely solid-state displays with nanometre-scale pixels, semi-transparent `smart' glasses, `smart' contact lenses and artificial retina devices.

  7. An optoelectronic framework enabled by low-dimensional phase-change films.

    Science.gov (United States)

    Hosseini, Peiman; Wright, C David; Bhaskaran, Harish

    2014-07-10

    The development of materials whose refractive index can be optically transformed as desired, such as chalcogenide-based phase-change materials, has revolutionized the media and data storage industries by providing inexpensive, high-speed, portable and reliable platforms able to store vast quantities of data. Phase-change materials switch between two solid states--amorphous and crystalline--in response to a stimulus, such as heat, with an associated change in the physical properties of the material, including optical absorption, electrical conductance and Young's modulus. The initial applications of these materials (particularly the germanium antimony tellurium alloy Ge2Sb2Te5) exploited the reversible change in their optical properties in rewritable optical data storage technologies. More recently, the change in their electrical conductivity has also been extensively studied in the development of non-volatile phase-change memories. Here we show that by combining the optical and electronic property modulation of such materials, display and data visualization applications that go beyond data storage can be created. Using extremely thin phase-change materials and transparent conductors, we demonstrate electrically induced stable colour changes in both reflective and semi-transparent modes. Further, we show how a pixelated approach can be used in displays on both rigid and flexible films. This optoelectronic framework using low-dimensional phase-change materials has many likely applications, such as ultrafast, entirely solid-state displays with nanometre-scale pixels, semi-transparent 'smart' glasses, 'smart' contact lenses and artificial retina devices.

  8. Conductance relaxation in GeBiTe: Slow thermalization in an open quantum system

    Science.gov (United States)

    Ovadyahu, Z.

    2018-02-01

    This work describes the microstructure and transport properties of GeBixTey films with emphasis on their out-of-equilibrium behavior. Persistent-photoconductivity (PPC), previously studied in the phase-change compound GeSbxTey , is also quite prominent in this system. Much weaker PPC response is observed in the pure GeTe compound and when alloying GeTe with either In or Mn. Films made from these compounds share the same crystallographic structure, the same p -type conductivity, a similar compositional disorder extending over mesoscopic scales, and similar mosaic morphology. The enhanced photoconductive response exhibited by the Sb and Bi alloys may therefore be related to their common chemistry. Persistent photoconductivity is observable in GeBixTey films at the entire range of sheet resistances studied in this work (≈103Ω to ≈55 M Ω ). The excess conductance produced by a brief exposure to infrared illumination decays with time as a stretched exponential (Kohlrausch law). Intrinsic electron-glass effects, on the other hand, are observable in thin films of GeBixTey only for samples that are strongly localized just like it was noted with the seven electron glasses previously studied. These include a memory dip which is the defining attribute of the phenomenon. The memory dip in GeBixTey is the widest amongst the germanium-telluride alloys studied to date consistent with the high carrier concentration N ≥1021cm-3 of this compound. The thermalization process exhibited in either the PPC state or in the electron-glass regime is sluggish but the temporal law of the relaxation from the out-of-equilibrium state is distinctly different. Coexistence of the two phenomena give rise to some nontrivial effects, in particular, the visibility of the memory dip is enhanced in the PPC state. The relation between this effect and the dependence of the memory-effect magnitude on the ratio between the interparticle interaction and quench disorder is discussed.

  9. Electronic transport in amorphous phase-change materials

    International Nuclear Information System (INIS)

    Luckas, Jennifer Maria

    2012-01-01

    Phase change materials combine a pronounced contrast in resistivity and reflectivity between their disordered amorphous and ordered crystalline state with very fast crystallization kinetics. Due to this exceptional combination of properties phase-change materials find broad application in non-volatile optical memories such as CD, DVD or Bluray Disc. Furthermore, this class of materials demonstrates remarkable electrical transport phenomena in their disordered state, which have shown to be crucial for their application in electronic storage devices. The threshold switching phenomenon denotes the sudden decrease in resistivity beyond a critical electrical threshold field. The threshold switching phenomenon facilitates the phase transitions at practical small voltages. Below this threshold the amorphous state resistivity is thermally activated and is observed to increase with time. This effect known as resistance drift seriously hampers the development of multi-level storage devices. Hence, understanding the physical origins of threshold switching and resistance drift phenomena is crucial to improve non-volatile phase-change memories. Even though both phenomena are often attributed to localized defect states in the band gap, the defect state density in amorphous phase-change materials has remained poorly studied. Starting from a brief introduction of the physics of phase-change materials this thesis summarizes the most important models behind electrical switching and resistance drift with the aim to discuss the role of localized defect states. The centerpiece of this thesis is the investigation of defects state densities in different amorphous phase-change materials and electrical switching chalcogenides. On the basis of Modulated Photo Current (MPC) Experiments and Photothermal Deflection Spectroscopy, a sophisticated band model for the disordered phase of the binary phase-change alloy GeTe has been developed. By this direct experimental approach the band-model for a

  10. Electronic transport in amorphous phase-change materials

    Energy Technology Data Exchange (ETDEWEB)

    Luckas, Jennifer Maria

    2012-09-14

    Phase change materials combine a pronounced contrast in resistivity and reflectivity between their disordered amorphous and ordered crystalline state with very fast crystallization kinetics. Due to this exceptional combination of properties phase-change materials find broad application in non-volatile optical memories such as CD, DVD or Bluray Disc. Furthermore, this class of materials demonstrates remarkable electrical transport phenomena in their disordered state, which have shown to be crucial for their application in electronic storage devices. The threshold switching phenomenon denotes the sudden decrease in resistivity beyond a critical electrical threshold field. The threshold switching phenomenon facilitates the phase transitions at practical small voltages. Below this threshold the amorphous state resistivity is thermally activated and is observed to increase with time. This effect known as resistance drift seriously hampers the development of multi-level storage devices. Hence, understanding the physical origins of threshold switching and resistance drift phenomena is crucial to improve non-volatile phase-change memories. Even though both phenomena are often attributed to localized defect states in the band gap, the defect state density in amorphous phase-change materials has remained poorly studied. Starting from a brief introduction of the physics of phase-change materials this thesis summarizes the most important models behind electrical switching and resistance drift with the aim to discuss the role of localized defect states. The centerpiece of this thesis is the investigation of defects state densities in different amorphous phase-change materials and electrical switching chalcogenides. On the basis of Modulated Photo Current (MPC) Experiments and Photothermal Deflection Spectroscopy, a sophisticated band model for the disordered phase of the binary phase-change alloy GeTe has been developed. By this direct experimental approach the band-model for a